Photochemical oxygen reduction by zinc phthalocyanine and silver/gold nanoparticle incorporated silica thin films

Energy Technology Data Exchange (ETDEWEB)

Pal, Manas; Ganesan, Vellaichamy, E-mail: velganesh@yahoo.com; Azad, Uday Pratap

2012-12-15

Silver or gold nanoparticles are synthesized using a borohydride reduction method and are anchored simultaneously into/onto the mercaptopropyl functionalized silica. Later, zinc phthalocyanine is adsorbed onto the above materials. Thin films of these materials are prepared by coating an aqueous colloidal suspension of the respective material onto glass plates. Visible light irradiation of these films in oxygen saturated, stirred aqueous solutions effectively reduces oxygen to hydrogen peroxide. The photocatalytic reduction of oxygen is explained on the basis of the semiconducting properties of the silica films. The back electron transfer reaction is largely prevented by means of a sacrificial electron donor, triethanolamine. - Highlights: Black-Right-Pointing-Pointer Zinc phthalocyanine adsorbed silica materials were prepared. Black-Right-Pointing-Pointer Thin films of these materials photocatalytically reduce oxygen. Black-Right-Pointing-Pointer The photocatalysis is explained based on semiconductor properties of the materials. Black-Right-Pointing-Pointer Metal nanoparticles increase the photocatalytic efficiency of the materials.

Optical and infrared spectroscopic studies of chemical sensing by copper phthalocyanine thin films

International Nuclear Information System (INIS)

Singh, Sukhwinder; Tripathi, S.K.; Saini, G.S.S.

2008-01-01

Thin films of copper phthalocyanine have been deposited on KBr and glass substrates by thermal evaporation method and characterized by the X-ray diffraction and optical absorption techniques. The observed X-ray pattern suggests the presence of α crystalline phase of copper phthalocyanine in the as-deposited thin films. Infrared spectra of thin films on the KBr pallet before and after exposure to the vapours of ammonia and methanol have been recorded in the wavenumber region of 400-1650 cm -1 . The observed infrared bands also confirm the α crystalline phase. On exposure, change in the intensity of some bands is observed. A new band at 1385 cm -1 , forbidden under ideal D 4h point group symmetry, is also observed in the spectra of exposed thin films. These changes in the spectra are interpreted in terms of the lowering of molecular symmetry from D 4h to C 4v . Axial ligation of the vapour molecules on fifth coordination site of the metal ion is responsible for lowering of the molecular symmetry

Layer-by-layer construction of graphene/cobalt phthalocyanine composite film on activated GCE for application as a nitrite sensor

International Nuclear Information System (INIS)

Cui, Lili; Pu, Tao; Liu, Ying; He, Xingquan

2013-01-01

Graphical abstract: A novel nitrite sensor was prepared by using LBL technique which for the first time used the activated positively charged glassy carbon electrode (A-GCE) as the substrate. The nitrite sensor shows super stability for consecutive CV testing and rather low detection limit. -- Abstract: In this paper, a novel graphene/cobalt phthalocyanine composite film was prepared by layer-by-layer (LBL) technique which for the first time used the activated positively charged glassy carbon electrode (A-GCE) as the substrate. The surface morphology of graphene/cobalt phthalocyanine composite film was characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). It is found that graphene/cobalt phthalocyanine composite film modified GCE exhibits good catalytic activity toward the oxidation of nitrite. The oxidation current barely decreases in consecutive CV test. Furthermore, the modified GCE shows long-term stability after 70 days. The super good stability can be attributed to the immobilization and dispersion of electroactive cobalt phthalocyanine by graphene, and using A-GCE as substrate which can enhance the interaction force between GCE and electroactive cobalt phthalocyanine. The nitrite sensor shows rather low detection limit of 0.084 μM at a signal-to-noise ratio = 3 (S/N = 3)

Comparison of Chemical Changes During Photooxidation of Polypropylene Film and Filament Containing Phthalocyanine Pigment

Directory of Open Access Journals (Sweden)

Z. Ahmadi

2008-02-01

Full Text Available Photooxidation as an important process, which significantly affects the service life of the polypropylene products, has been the subject of much theoretical and experimental study. Pigments used often change the light stabilities of polypropylene. Out-door applications of pigmented polypr-opylene are now increasingly developed in products such as artificial grass. The aim of this work is to examine the effect of photo-oxidation on the structure of isotactic polypropylene (iPP in film and filament forms, where phthalocyanine pigment is used. For production of films and filaments, iPP granules with MFI 25 g/10min were used, with and without phthalocyanine pigment. Samples were exposed to xenon lamp for various time lengths. The extent of the changes in chemical and structural parameters was examined by differential scanning calorimetry, Fourier transform infrared spectroscopy and wide angle x-ray diffraction. The results show that carbonyl and hydroperoxide indices increase during the exposure to the radiation. The changes in melting points of the samples were not significant after irradiation process. The effects of phthalocyanine pigment in the photooxidation of filmand filament were different. Crystalline fractions of the non-pigmented filament samples decreased during the irradiation time while increased in film samples. Build up of hydroperoxide and carbonyl group in filament was higher than in film samples; that could be due to the differences in structural parameters. Crystallinity variations during photooxidation are related to the nucleation effect of the pigment, chemical crystallization and phase transformation.

Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

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Michael J. Brett

2012-08-01

Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

Nanostructuring on zinc phthalocyanine thin films for single-junction organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Chaudhary, Dhirendra K.; Kumar, Lokendra, E-mail: lokendrakr@allduniv.ac.in [Department of Physics, University of Allahabad, Allahabad-211 002 (India)

2016-05-23

Vertically aligned and random oriented crystalline molecular nanorods of organic semiconducting Zinc Phthalocyanine (ZnPc) have been grown on ITO coated glass substrate using solvent volatilization method. Interesting changes in surface morphology were observed under different solvent treatment. Vertically aligned nanorods of ZnPc thin film were observed in the films treated with acetone, where as the random oriented nanorods were observed in the films treated with chloroform. The X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) have been used for characterization of nanostructures. The optical properties of the nanorods have been investigated by UV-Vis. absorption spectroscopy.

An Electrochemical Quartz Crystal Microbalance Multisensor System Based on Phthalocyanine Nanostructured Films: Discrimination of Musts

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Celia Garcia-Hernandez

2015-11-01

Full Text Available An array of electrochemical quartz crystal electrodes (EQCM modified with nanostructured films based on phthalocyanines was developed and used to discriminate musts prepared from different varieties of grapes. Nanostructured films of iron, nickel and copper phthalocyanines were deposited on Pt/quartz crystals through the Layer by Layer technique by alternating layers of the corresponding phthalocyanine and poly-allylamine hydrochloride. Simultaneous electrochemical and mass measurements were used to study the mass changes accompanying the oxidation of electroactive species present in must samples obtained from six Spanish varieties of grapes (Juan García, Prieto Picudo, Mencía Regadío, Cabernet Sauvignon, Garnacha and Tempranillo. The mass and voltammetric outputs were processed using three-way models. Parallel Factor Analysis (PARAFAC was successfully used to discriminate the must samples according to their variety. Multi-way partial least squares (N-PLS evidenced the correlations existing between the voltammetric data and the polyphenolic content measured by chemical methods. Similarly, N-PLS showed a correlation between mass outputs and parameters related to the sugar content. These results demonstrated that electronic tongues based on arrays of EQCM sensors can offer advantages over arrays of mass or voltammetric sensors used separately.

Equilibrium helium film in the thick film limit

International Nuclear Information System (INIS)

Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

2003-01-01

For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

Determination of the Optical GAP in Thin Films of Amorphous Dilithium Phthalocyanine Using the Tauc and Cody Models

Directory of Open Access Journals (Sweden)

Jerry N. Reider-Burstin

2012-08-01

Full Text Available Semiconducting thin films were grown on quartz substrates and crystalline silicon wafers, using dilithium phthalocyanine and the organic ligands 2,6-dihydroxyanthraquinone and 2,6-diaminoanthraquinone as the starting compounds. The films, thus obtained, were characterized by Fourier Transform infrared (FTIR, fast atomic bombardment (FAB+ mass and ultraviolet-visible (UV-Vis spectroscopies. The surface morphology of these films was analyzed by means of atomic force microscopy (AFM and scanning electron microscopy (SEM. It was found that the temperature-dependent electric current in all cases showed a semiconductor behavior with conductivities on the order of 10⁻⁶·S cm⁻¹, whereas the highest value corresponded to the thin film based upon the bidentate amine. The Tauc and Cody optical band gap values of thin films were calculated from the absorption coefficients and were found to be around 1.5 eV, with another strong band between 2.3 and 2.43 eV, arising from non-direct transitions. The curvature in the Tauc plot influencing the determination of the optical gap, the Tauc optical gap corresponding to the thicker film is smaller. The dependence of the Cody optical gap on the film thickness was negligible.

High-efficiency THz modulator based on phthalocyanine-compound organic films

International Nuclear Information System (INIS)

He, Ting; Zhang, Bo; Shen, Jingling; Zang, Mengdi; Chen, Tianji; Hu, Yufeng; Hou, Yanbing

2015-01-01

We report a high efficiency, broadband terahertz (THz) modulator following a study of phthalocyanine-compound organic films irradiated with an external excitation laser. Both transmission and reflection modulations of each organic/silicon bilayers were measured using THz time-domain and continuous-wave systems. For very low intensities, the experimental results show that AlClPc/Si can achieve a high modulation factor for transmission and reflection, indicating that AlClPc/Si has a superior modulation efficiency compared with the other films (CuPc and SnCl 2 Pc). In contrast, the strong attenuation of the transmitted and reflected THz waves revealed that a nonlinear absorption process takes place at the organic/silicon interface

Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

Science.gov (United States)

Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

2014-12-01

The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

Layer-by-layer assembled highly absorbing hundred-layer films containing a phthalocyanine dye: Fabrication and photosensibilization by thermal treatment

International Nuclear Information System (INIS)

Sergeeva, Alena S.; Volkova, Elena K.; Bratashov, Daniil N.; Shishkin, Mikhail I.; Atkin, Vsevolod S.; Markin, Aleksey V.; Skaptsov, Aleksandr A.; Volodkin, Dmitry V.; Gorin, Dmitry A.

2015-01-01

Highly absorbing hundred-layer films based on poly(diallyldimethylammonium chloride) (PDADMAC) of various molecular weights and on sulfonated copper phthalocyanine (CuPcTs) were prepared using layer-by-layer assembly. The multilayer films grew linearly up to 54 bilayers, indicating that the same amount of CuPcTs was adsorbed at each deposition step. This amount, however, was dependent on the molecular weight of PDADMAC in the range 100-500 kDa: the higher the molecular weight, the more CuPcTs molecules were adsorbed. This can be explained by the larger surface charge number density specific to longer polymer chains. Domains of pure PDADMAC and of the PDADMAC/CuPcTs complex were formed in the films during the assembly. Uniform distribution of CuPcTs over the films could be achieved by thermal treatment, leading to an α → β phase transition in phthalocyanine at 300 °C. Annealing caused changes in the film absorbance spectra, resulting in a 30-nm red shift of the peak maxima and in a strong (up to 62%) decrease in optical density. Thermogravimetric analysis revealed thermodegradation of PDADMAC during annealing above 270 °C, giving rise to micrometer-sized cracks within the films, as evidenced by scanning electron microscopy. - Highlights: • The films exhibit the linear dependence of the adsorption on the bilayer number varied from 2 until 54. • Polyelectrolyte of the highest MW shows the maximal adsorption of copper phthalocyanine molecules. • Annealing of the films causes a red-shift of the maxima in the absorbance spectra. • Cracks and micropores emerged in the multilayer films during the annealing

Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

International Nuclear Information System (INIS)

Coppedè, Nicola; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Valitova, Irina; Cicoira, Fabio; Mahvash, Farzaneh; Santato, Clara; Martel, Richard

2014-01-01

The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs. (paper)

Layer-by-layer composite film of nickel phthalocyanine and montmorillonite clay for synergistic effect on electrochemical detection of dopamine

Science.gov (United States)

de Lucena, Nathalia C.; Miyazaki, Celina M.; Shimizu, Flávio M.; Constantino, Carlos J. L.; Ferreira, Marystela

2018-04-01

Dopamine (DA) abnormal levels are related to diseases which makes important the development of fast, reliable, low-cost and sensitive devices for diagnosis and pharmaceutical controls. Nanostructured film composite of sodium montmorillonite clay (Na+MMT) and nickel phthalocyanine (NiTsPc) was self-assembled by layer-by-layer (LbL) technique and applied as electrochemical sensor for DA in the presence of common natural interferents as ascorbic acid (AA) and uric acid (UA). Three different LbL architecture films were investigated: LbL films of clay (PEI/Na+MMT) and phthalocyanine (PEI/NiTsPc) in a bilayer structure with a conventional polyelectrolyte (PEI) and a composite film formed by both materials to verify the synergistic effect in the LbL film in a quadri-layer assembly (PEI/Na+MMT/PEI/NiTsPc). Structural characterization indicated molecular level interactions between the layers forming the LbL films. The ITO/(PEI/Na+MMT/PEI/NiTsPc)10 electrode exhibited a LOD of 1.0 μmol L-1 and linear range 5-150 μmol L-1.

Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Avijit; Biswas, Bipul; Majumder, Manisree; Sanyal, Manik Kumar; Mallik, Biswanath, E-mail: spbm@iacs.res.in

2012-08-31

Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 Degree-Sign C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable {alpha} to {beta}-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 Degree-Sign C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful 'honey-comb' like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated. - Highlights: Black-Right-Pointing-Pointer Morphology and orientation of grains in zinc phthalocyanine (ZnPc) thin films. Black

Femtosecond time-resolved two-photon photoemission study of organic semiconductor copper phthalocyanine film

International Nuclear Information System (INIS)

Tanaka, A.; Tohoku University; University of Rochester, NY; Yan, L.; Watkins, N.J.; Gao, Y.

2004-01-01

Full text: Organic semiconductors are recently attracting much interest from the viewpoints of both device and fundamental physics. These organic semiconductors are considered to be important constituents of the future devices, such as organic light-emitting diode, organic field effect transistor, and organic solid-state injection laser. In order to elucidate their detailed physical properties and to develop the future devices, it is indispensable to understand their excited-state dynamics as well as their electronic structures. The femtosecond time-resolved two-photon photoemission (TR-2PPE) spectroscopy is attracting much interest because of its capability to observe the energy-resolved excited electron dynamics. In this work, we have carried out a TR-2PPE study of the organic semiconductor copper phthalocyanine (CuPc) film. Furthermore, we have investigated the detailed electronic structure of CuPc film using the photoemission (PES) and inverse photoemission (IPES) spectroscopies. From the simultaneous PES and IPES measurements for CuPc film with a thickness of 100 nm, the lowest unoccupied molecular orbital (LUMO), highest occupied molecular orbital, and ionization potential of CuPc film have been directly determined. The observed two-photon photoemission (2PPE) spectrum of the present CuPc film, measured with photon energy of about hv=3.3 eV, exhibits a broad feature. From the energy diagram of CuPc film determined by the PES and IPES measurements, the intermediate state observed in the present 2PPE spectrum of CuPc film corresponds to the energy region between about 0.4 and 1.7 eV above the LUMO energy. From the time-resolved pump-probe measurements, it is found that the relaxation lifetimes of excited states in the present CuPc films are very short (all below 50 fs) and monotonously become faster with increasing excitation energy. We attribute this extremely fast relaxation process of photoexcitation to a rapid internal conversion process. From these results

Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

Science.gov (United States)

Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

2012-04-01

To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

Capacitance measurements and AC conductivity of Nickel Phthalocyanine films

International Nuclear Information System (INIS)

Darwish, S.

2005-01-01

A C dark Current measurements of nickel phthalocyanine thin films using ohmic gold electrodes are investigated in the frequency range 30-10 Hz and within the temperature range 295-385 K. The A C conductivity as D Ac is found to vary as within the index s < 1, indicating a dominant hopping process at low temperatures. From the temperature dependence of A C conductivity, free carrier conduction with mean activation energy of 0.31 eV is observed at higher temperatures. Capacitance and loss tangent are found to be decreased with increasing frequency and increase with increasing temperature. Such characteristics are found to be in good qualitative agreement with existing equivalent circuit model assuming ohmic contacts

Plasmon-enhanced photocurrent generation from self-assembled monolayers of phthalocyanine by using gold nanoparticle films.

Science.gov (United States)

Sugawa, Kosuke; Akiyama, Tsuyoshi; Kawazumi, Hirofumi; Yamada, Sunao

2009-04-09

The effect of localized electric fields on the photocurrent responses of phthalocyanine that was self-assembled on a gold nanoparticle film was investigated by comparing the conventional and the total internal reflection (TIR) experimental systems. In the case of photocurrent measurements, self-assembled monolayers (SAMs) of a thiol derivative of palladium phthalocyanine (PdPc) were prepared on the surface of gold-nanoparticle film that was fixed on the surface of indium-tin-oxide (ITO) substrate via a polyion (PdPc/AuP/polyion/ITO) or on the ITO surface (PdPc/ITO). Photocurrent action spectra from the two samples were compared by using the conventional spectrometer, and were found that PdPc/AuP/polyion/ITO gave considerably larger photocurrent signals than PdPc/ITO under the identical concentration of PdPc. In the case of the TIR experiments for the PdPc/AuP/polyion/ITO and the PdPc/AuP/Glass systems, incident-angle profiles of photocurrent and emission signals were correlated with each other, and they were different from that of the PdPc/ITO system. Accordingly, it was demonstrated that the photocurrent signals were certainly enhanced by the localized electric fields of the gold-nanoparticle film.

Thin film formation at the air-water interface and on solid substrates of soluble axial substituted cis-bis-decanoate tin phthalocyanine

Energy Technology Data Exchange (ETDEWEB)

Campos-Teran, Jose, E-mail: jcampos@correo.cua.uam.mx [Departamento de Procesos y Tecnologia, DCNI, Universidad Autonoma Metropolitana-Cuajimalpa, Artificios 40-sexto piso, Col. Hidalgo, D. F., 001120 (Mexico); Garza, Cristina [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, P. O. Box 20-364, D. F., 01000 (Mexico); Beltran, Hiram I. [Departamento de Ciencias Naturales, DCNI, Universidad Autonoma Metropolitana-Cuajimalpa, Artificios 40-sexto piso, Col. Hidalgo, D. F., 001120 (Mexico); Castillo, Rolando [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, P. O. Box 20-364, D. F., 01000 (Mexico)

2012-01-01

Herein we study thin films of a recent kind of soluble axial substituted cis-bis-decanoate-tin{sup IV} phthalocyanine (PcSn10) at the air/water interface, which were compressed isothermally and observed with Brewster Angle Microscopy. The air/water interfacial behavior of the films suggests that there are strong interactions among the PcSn10 molecules, which produces multilayers and 3D self-assemblies that prevent the formation of a Langmuir monolayer. Langmuir-Blodgett deposits of these films on both mica (negatively charged) and mild steel (positively charged) surfaces were developed. Information about the morphology of the film was obtained by using atomic force microscopy. We found structural differences in the PcSn10 thin films deposited on both substrates, suggesting that a combination of {pi}-{pi}, {sigma}-{pi} and Van der Waals interactions are the leading factors for the deposition, and consequently, for the control of supramolecular order. Our findings provide insights in the design of phthalocyanine molecules for the development of highly ordered and reproducible thin films.

Thin film formation at the air–water interface and on solid substrates of soluble axial substituted cis-bis-decanoate tin phthalocyanine

International Nuclear Information System (INIS)

Campos-Terán, José; Garza, Cristina; Beltrán, Hiram I.; Castillo, Rolando

2012-01-01

Herein we study thin films of a recent kind of soluble axial substituted cis-bis-decanoate-tin IV phthalocyanine (PcSn10) at the air/water interface, which were compressed isothermally and observed with Brewster Angle Microscopy. The air/water interfacial behavior of the films suggests that there are strong interactions among the PcSn10 molecules, which produces multilayers and 3D self-assemblies that prevent the formation of a Langmuir monolayer. Langmuir–Blodgett deposits of these films on both mica (negatively charged) and mild steel (positively charged) surfaces were developed. Information about the morphology of the film was obtained by using atomic force microscopy. We found structural differences in the PcSn10 thin films deposited on both substrates, suggesting that a combination of π–π, σ–π and Van der Waals interactions are the leading factors for the deposition, and consequently, for the control of supramolecular order. Our findings provide insights in the design of phthalocyanine molecules for the development of highly ordered and reproducible thin films.

Photoconductivity study of acid on Zinc phthalocyanine pyridine thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Sukhwinder, E-mail: ss7667@gmail.com [Department of Physics, Govt. College for Girls, Ludhiana (India); Saini, G. S. S.; Tripathi, S. K. [Department of Physics, Panjab University, Chandigarh (India)

2016-05-06

The Metal Phthalocyanine (MPc) have attracted much interest because of chemical and high thermal stability. Molecules forming a crystal of MPc are held together by weak attractive Vander Waals forces. Organic semiconductors have π conjugate bonds which allow electrons to move via π-electron cloud overlaps. Conduction mechanisms for organic semiconductor are mainly through tunneling; hopping between localized states, mobility gaps, and phonon assisted hopping. The photo conductivity of thin films of these complexes changes when exposed to oxidizing and reducing gases. Arrhenius plot is used to find the thermal activation energy in the intrinsic region and impurity scattering region. Arrhenius plotsare used to find the thermal activation energy.

Characterization of titanyl phthalocyanine (TiOPc) thin films by microscopic and spectroscopic method

Science.gov (United States)

Skonieczny, R.; Makowiecki, J.; Bursa, B.; Krzykowski, A.; Szybowicz, M.

2018-02-01

The titanyl phthalocyanine (TiOPc) thin film deposited on glass, silicon and gold substrate have been studied using Raman spectroscopy, atomic force microscopy (AFM), absorption and profilometry measurements. The TiOPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The Raman spectra have been recorded using micro Raman system equipped with a confocal microscope. Using surface Raman mapping techni que with polarized Raman spectra the polymorphic forms of the TiOPc thin films distribution have been obtained. The AFM height and phase image were examined in order to find surface features and morphology of the thin films. Additionally to compare experimental results, structure optimization and vibrational spectra calculation of single TiOPc molecule were performed using DFT calculations. The received results showed that the parameters like polymorphic form, grain size, roughness of the surface in TiOPc thin films can well characterize the obtained organic thin films structures in terms of their use in optoelectronics and photovoltaics devices.

Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

Directory of Open Access Journals (Sweden)

Benny Joseph

2008-01-01

Full Text Available Thin films of Cobalt Phthalocyanine (CoPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

Thick film hydrogen sensor

Science.gov (United States)

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

doped ZnO thick film resistors

Indian Academy of Sciences (India)

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

Generation of Transparent Oxygen Evolution Electrode Consisting of Regularly Ordered Nanoparticles from Self-Assembly Cobalt Phthalocyanine as a Template

KAUST Repository

Ziani, Ahmed

2016-11-04

The decoration of (photo)electrodes for efficient photoresponse requires the use of electrocatalysts with good dispersion and high transparency for efficient light absorption by the photoelectrode. As a result of the ease of thermal evaporation and particulate self-assembly growth, the phthalocyanine molecular species can be uniformly deposited layer-by-layer on the surface of substrates. This structure can be used as a template to achieve a tunable amount of catalysts, high dispersion of the nanoparticles, and transparency of the catalysts. In this study, we present a systematic study of the structural and optical properties, surface morphologies, and electrochemical oxygen evolution reaction (OER) performance of cobalt oxide prepared from a phthalocyanine metal precursor. Cobalt phthalocyanine (CoPc) films with different thicknesses were deposited by thermal evaporation on different substrates. The films were annealed at 400 °C in air to form a material with the cobalt oxide phase. The final Co oxide catalysts exhibit high transparency after thermal treatment. Their OER measurements demonstrate well expected mass activity for OER. Thermally evaporated and treated transition metal oxide nanoparticles are attractive for the functionalization of (photo)anodes for water oxidation.

Fabrication and characterization of tetracyanoquinodimethane/phthalocyanine solar cells

International Nuclear Information System (INIS)

Suzuki, Atsushi; Ohtsuki, Takahiro; Oku, Takeo; Akiyama, Tsuyoshi

2012-01-01

Highlights: ► Heterojunction solar cells of tetracyanoquinodimethane (TCNQ)/copper phthalocyanine (CuPc) and zinc phthalocyanine (ZnPc) were fabricated and characterized. ► The light-induced charge separation with charge transfer was investigated by light-induced current density and optical absorption.. ► In both solar cells of TCNQ/CuPc and TCNQ/ZnPc, the TCNQ thin film worked for strong electron-accepting layer. ► These behaviors would be originated in charge transfer of excited electron from CuPc and ZnPc to TCNQ. ► The photovoltaic mechanism was discussed by the experimental results. - Abstract: Fabrication and characterization of heterojunction solar cells of tetracyanoquinodimethane (TCNQ)/copper phthalocyanine (CuPc) and zinc phthalocyanine (ZnPc) were carried out. The light-induced charge separation with charge transfer was investigated by light-induced current density and optical absorption. In both cases of the TCNQ/CuPc and TCNQ/ZnPc solar cells, the TCNQ thin film worked for strong electron-accepting layer as n-type semiconductor. These behaviors would be originated in charge transfer of excited electron from CuPc and ZnPc to TCNQ. The photovoltaic mechanism was discussed on the basis of the experimental results.

Photoelectric characteristics of lead phthalocyanine/titanium oxide structures

CERN Document Server

Ray, A K; Hodgson, S N B

2003-01-01

A study has been carried out into the conduction, charge transfer/electron injection and photovoltaic conversion properties of TiO sub 2 -lead phthalocyanine (PbPc) heterojunctions. The results indicate that although the heterojunction area, and hence overall conversion efficiency, was low for the planar device structures used in the investigation, electron injection and effective charge separation across the dye-TiO sub 2 interface was achieved, with open circuit voltages in the region of 0.3 V. The conversion efficiency was found to be a function of the thickness of the phthalocyanine layer, increasing by a factor of more than 30 times as the thickness of the dye layer was reduced from 500 to 100 nm. The results suggest that under appropriate deposition conditions, to ensure effective coating of the inorganic phase, such phthalocyanine dyes may offer potential for use in dye sensitized photovoltaic cells.

Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

International Nuclear Information System (INIS)

Lee, Sung Sik; Kim, Young H.

2005-01-01

In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

Thick-film analysis: literature search and bibliography

International Nuclear Information System (INIS)

Gehman, R.W.

1981-09-01

A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

Photodynamics of charge separation and recombination in solid alternating films of phthalocyanine or phthalocyanine-fullerene dyad and perylene dicarboximide

NARCIS (Netherlands)

Lehtivuori, Heli; Kumpulainen, Tatu; Hietala, Matti; Efimov, Alexander; Helge, Lemmetyinen; Kira, Aiko; Imahori, Hiroshi; Tkachenko, Nikolai V.

2009-01-01

Alternate bilayer structures of N,N'-bis(2,5-di-tert-butylphenyl)-3,4,9,10- perylene dicarboximide (PDI), freebase phthalocyanines (Pc), and double-linked free-base phthalocyanine-fullerene dyad (Pc-C 60) were prepared by the Langmuir-Schäfer method and studied using a range of optical spectroscopy

Electronic Tongue Based on Nanostructured Hybrid Films of Gold Nanoparticles and Phthalocyanines for Milk Analysis

Directory of Open Access Journals (Sweden)

Luiza A. Mercante

2015-01-01

Full Text Available The use of gold nanoparticles combined with other organic and inorganic materials for designing nanostructured films has demonstrated their versatility for various applications, including optoelectronic devices and chemical sensors. In this study, we reported the synthesis and characterization of gold nanoparticles stabilized with poly(allylamine hydrochloride (Au@PAH NPs, as well as the capability of this material to form multilayer Layer-by-Layer (LbL nanostructured films with metal tetrasulfonated phthalocyanines (MTsPc. Film growth was monitored by UV-Vis absorption spectroscopy, atomic force microscopy (AFM, and Fourier transform infrared spectroscopy (FTIR. Once LbL films have been applied as active layers in chemical sensors, Au@PAH/MTsPc and PAH/MTsPc LbL films were used in an electronic tongue system for milk analysis regarding fat content. The capacitance data were treated using Principal Component Analysis (PCA, revealing the role played by the gold nanoparticles on the LbL films electrical properties, enabling this kind of system to be used for analyzing complex matrices such as milk without any prior pretreatment.

Influence of processing parameters on PZT thick films

International Nuclear Information System (INIS)

Huang, Oliver; Bandyopadhyay, Amit; Bose, Susmita

2005-01-01

We have studied influence of processing parameters on the microstructure and ferroelectric properties of lead zirconate titanate (PZT)-based thick films in the range of 5-25 μm. PZT and 2% La-doped PZT thick films were processed using a modified sol-gel process. In this process, PZT- and La-doped PZT powders were first prepared via sol-gel. These powders were calcined and then used with respective sols to form a slurry. Slurry composition was optimized to spin-coat thick films on platinized Si substrate (Si/SiO 2 /Ti/Pt). Spinning rate, acceleration and slurry deposition techniques were optimized to form thick films with uniform thickness and without any cracking. Increasing solids loading was found to enhance the surface smoothness of the film and decrease porosity. Films were tested for their electrical properties and ferroelectric fatigue response. The maximum polarization obtained was 40 μC/cm 2 at 250 kV/cm for PZT thick film and 30 μC/cm 2 at 450 kV/cm for La-doped PZT thick film. After 10 9 cycles of fatiguing at 35 kHz, La-doped PZT showed better resistance for ferroelectric fatigue compared with un-doped PZT films

The Thickness Dependence of Optical Constants of Ultrathin Iron Films

International Nuclear Information System (INIS)

Gao Shang; Lian Jie; Wang Xiao; Li Ping; Sun Xiao-Fen; Li Qing-Hao

2013-01-01

Ultrathin iron films with different thicknesses from 7.1 to 51.7 nm are deposited by magnetron sputtering and covered by tantalum layers protecting them from being oxidized. These ultrathin iron films are studied by spectroscopic ellipsometry and transmittance measurement. An extra tantalum film is deposited under the same sputtering conditions and its optical constants and film thickness are obtained by a combination of ellipsometry and transmission measurement. After introducing these obtained optical constants and film thickness into the tantalum-iron film, the optical constants and film thicknesses of ultrathin iron films with different thicknesses are obtained. The results show that combining ellipsometry and transmission measurement improves the uniqueness of the obtained film thickness. The optical constants of ultrathin iron films depend strongly on film thicknesses. There is a broad absorption peak at about 370 nm and it shifts to 410 nm with film thickness decreasing

Fast Response and High Sensitivity of ZnO Nanowires-Cobalt Phthalocyanine Heterojunction Based H2S Sensor.

Science.gov (United States)

Kumar, Ashwini; Samanta, Soumen; Singh, Ajay; Roy, Mainak; Singh, Surendra; Basu, Saibal; Chehimi, Mohmad M; Roy, Kallol; Ramgir, Niranjan; Navaneethan, M; Hayakawa, Y; Debnath, Anil K; Aswal, Dinesh K; Gupta, Shiv K

2015-08-19

The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p-n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p-n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

Thickness Dependent on Photocatalytic Activity of Hematite Thin Films

Directory of Open Access Journals (Sweden)

Yen-Hua Chen

2012-01-01

Full Text Available Hematite (Fe2O3 thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.

Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

International Nuclear Information System (INIS)

Socol, M.; Preda, N.; Rasoga, O.; Breazu, C.; Stavarache, I.; Stanculescu, F.; Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G.; Girtan, M.; Stefan, N.

2016-01-01

Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

Energy Technology Data Exchange (ETDEWEB)

Socol, M., E-mail: cela@infim.ro [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Preda, N.; Rasoga, O. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Breazu, C. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Stavarache, I. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Stanculescu, F. [University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania); Girtan, M. [Laboratoire de Photonique d’Angers, Université d’Angers, 2, Bd. Lavoisier, 49045 Angers (France); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania)

2016-06-30

Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

Film-thickness and composition dependence of epitaxial thin-film PZT-based

NARCIS (Netherlands)

Nguyen, Duc Minh; Dekkers, Jan M.; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

2013-01-01

The transverse piezoelectric coefficient e31,f and mass-sensitivity were measured on piezoelectric cantilevers based on epitaxial PZT thin-films with film-thicknesses ranging from 100 to 2000 nm. The highest values of e31,f and mass-sensitivity were observed at a film thickness of 500–750 nm, while

Control of in-plane orientation of phthalocyanine molecular columns using vicinal Si(001)-(2x1)-H

International Nuclear Information System (INIS)

Nakamura, Masakazu; Matsunobe, Takeshi; Tokumoto, Hiroshi

2001-01-01

In-plane crystal orientation of copper phthalocyanine (CuPc) films formed by organic molecular-beam epitaxy have been successfully controlled by using vicinal Si(001)-(2x1)-H as a substrate, containing atomic steps of an approximately 4 nm period. A continuous film was grown at 60 degree C and the film thickness ranged between 5 and 8 molecular layers. By observing a frictional force image of the film, 90% of the molecular columns were found to align across the substrate step rows. The preferential orientation is considered to be induced by artificial surface lattices, which result from the striped effective contact area between the rigid CuPc crystals and the stair-like surfaces. The anisotropic optical properties of the film have been also confirmed by polarized reflection measurements. [copyright] 2001 American Institute of Physics

Film thickness determination by grazing incidence diffraction

Energy Technology Data Exchange (ETDEWEB)

Battiston, G A; Gerbasi, R [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

1996-09-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

Film thickness determination by grazing incidence diffraction

International Nuclear Information System (INIS)

Battiston, G. A.; Gerbasi, R.

1996-01-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive

Negative differential resistance in nickel octabutoxy phthalocyanine and nickel octabutoxy phthalocyanine/graphene oxide ultrathin films

Science.gov (United States)

Sarkar, Arup; Suresh, K. A.

2018-04-01

We find negative differential resistance (NDR) at room temperature in ultrathin films of nickel (II) 1,4,8,11,15,18,22,25-octabutoxy-29H,31H-phthalocyanine [NiPc(OBu)8] deposited on highly ordered pyrolytic graphite (HOPG) substrate [NiPc(OBu)8/HOPG] and NiPc(OBu)8 on graphene oxide (GO) deposited on HOPG [NiPc(OBu)8/GO/HOPG]. For the NiPc(OBu)8/HOPG system, NiPc(OBu)8 was transferred four times onto HOPG by the Langmuir-Blodgett (LB) technique. We have prepared a stable Langmuir monolayer of amphiphilic GO at the air-water interface and transferred it onto HOPG by the LB technique. Further, the monolayer of NiPc(OBu)8 was transferred four times for good coverage on GO to obtain the NiPc(OBu)8/GO/HOPG system. The current-voltage characteristics were carried out using a current sensing atomic force microscope (CSAFM) with a platinum (Pt) tip that forms Pt/NiPc(OBu)8/HOPG and Pt/NiPc(OBu)8/GO/HOPG junctions. The CSAFM, UV-visible spectroscopy, and cyclic voltammetry studies show that the NDR effect occurs due to molecular resonant tunneling. In the Pt/NiPc(OBu)8/GO/HOPG junction, we find that due to the presence of GO, the features of NDR become more prominent. Also, GO causes a shift in NDR voltage towards a lower value in the negative bias direction. We attribute this behavior to the role of GO in injecting holes into the NiPc(OBu)8 film.

Aluminum oxide film thickness and emittance

International Nuclear Information System (INIS)

Thomas, J.K.; Ondrejcin, R.S.

1991-11-01

Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

Interferometric measurement of film thickness during bubble blowing

Science.gov (United States)

Wang, Z.; Mandracchia, B.; Ferraro, V.; Tammaro, D.; Di Maio, E.; Maffettone, P. L.; Ferraro, P.

2017-06-01

In this paper, we propose digital holography in transmission configuration as an effective method to measure the time-dependent thickness of polymeric films during bubble blowing. We designed a complete set of experiments to measure bubble thickness, including the evaluation of the refractive index of the polymer solution. We report the measurement of thickness distribution along the film during the bubble formation process until the bubble`s rupture. Based on those data, the variation range and variation trend of bubble film thickness are clearly measured during the process of expansion to fracture is indicated.

Optimized adsorption of sulfonated phthalocyanines on ZnO electrodes and their characterization in dye- sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Falgenhauer, Jane; Loewenstein, Thomas; Schlettwein, Derck [Institute of Applied Physics, Justus-Liebig-University Giessen (Germany)

2010-07-01

Phthalocyanines belong to the most stable industrial dyes and show some of the highest molar extinction coefficients in the visible range. ZnO is known as a wide band gap semiconductor material which can be conveniently prepared as a porous electrode from solution-based processes. Sulfonated phthalocyanines were adsorbed at such electrodeposited porous ZnO thin films to work as a photosensitizer in a dye sensitized solar cell (DSSC). The adsorption solution of the phthalocyanine was modified in its composition and by adding different detergents in different concentrations. The adsorption solutions and the sensitized ZnO films were investigated by UV/Vis spectroscopy to characterize the aggregation of the dye molecules. Most of the detergents used could minimize the aggregation of the dye molecules in the adsorption solution without hindering the adsorption of the phthalocyanine on the ZnO surface. The photoelectrochemical characteristics of the resulting test cells were determined using a standard liquid electrolyte. The efficiency of the cells did not reach the expected level and reasons for this are discussed based on film morphology, amount of adsorbed dye molecules, competition by detergent adsorption, the optical absorbance of the dyes in the film and aggregate formation.

NdFeB thick films prepared by tape casting

International Nuclear Information System (INIS)

Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

2003-01-01

NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

International Nuclear Information System (INIS)

Breiland, W.G.; Lee, S.R.; Koleske, D.D.

2004-01-01

When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients produce optical diffraction effects that steer the laser away from the ideal specular condition. As a result, the deflection of the laser in wafer-curvature measurements is actually sensitive to both the film stress and the film-thickness gradient. We present a Fresnel-Kirchhoff optical diffraction model of wafer-curvature measurements that provides a unified description of these combined effects. The model accurately simulates real-time wafer-curvature measurements of nonuniform GaN films grown on sapphire substrates by vapor-phase epitaxy. During thin-film growth, thickness gradients cause the reflected beam to oscillate asymmetrically about the ideal position defined by the stress-induced wafer curvature. This oscillating deflection has the same periodicity as the reflectance of the growing film, and the deflection amplitude is a function of the film-thickness gradient, the mean film thickness, the wavelength distribution of the light source, the illuminated spot size, and the refractive indices of the film and substrate. For typical GaN films grown on sapphire, misinterpretation of these gradient-induced oscillations can cause stress-measurement errors that approach 10% of the stress-thickness product; much greater errors occur in highly nonuniform films. Only transparent films can exhibit substantial gradient-induced deflections; strongly absorbing films are immune

Advantages of PZT thick film for MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

2010-01-01

For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

Study of thin films of carrier-doped strontium titanate with emphasis on their interfaces with organic thin films

Energy Technology Data Exchange (ETDEWEB)

Sato, Naoki [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)]. E-mail: naokis@e.kuicr.kyoto-u.ac.jp; Harada, Youichiro [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Terashima, Takahito [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kanda, Ryoko [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Takano, Mikio [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)

2005-05-15

Fifty nanometer-thick metal-doped strontium titanate (M:STO, M = La and V) films deposited epitaxially on single crystalline STO substrates were characterized in comparison with indium tin oxide (ITO) covered glasses, to check their applicability to optically transparent anode materials for organic optoelectronic devices. M:STO, in particular V:STO, films turned out to have distinct surface flatness, needfully low electric resistivities and notably large work functions. While their optical transmittances are lower than those of ITOs at this moment, we suggest that M:STO films have a potential to take the place of ITO films. Further, we have observed energy level alignments for copper phthalocyanine thin films at the interface of V:STO.

Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

Directory of Open Access Journals (Sweden)

Busi Rambabu

2014-01-01

Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

Energy Technology Data Exchange (ETDEWEB)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2010-11-10

A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

International Nuclear Information System (INIS)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

2010-01-01

A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

International Nuclear Information System (INIS)

Luo Xinze; Xu Lin; Xu Bingbing; Li Fengyan

2011-01-01

Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO 3 ) 2 , TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 μA cm -2 , a fill factor of 0.26, and a power conversion efficiency of 0.14%.

Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

Energy Technology Data Exchange (ETDEWEB)

Luo Xinze [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); College of Chemistry and Biological Science, Yili Normal University, Yining 835000, (China); Xu Lin, E-mail: linxu@nenu.edu.cn [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); Xu Bingbing; Li Fengyan [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China)

2011-05-15

Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO{sub 3}){sub 2}, TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 {mu}A cm{sup -2}, a fill factor of 0.26, and a power conversion efficiency of 0.14%.

Synergistic interaction between gold nanoparticles and nickel phthalocyanine in layer-by-layer (LbL) films: evidence of constitutional dynamic chemistry (CDC).

Science.gov (United States)

Alencar, Wagner S; Crespilho, Frank N; Martins, Marccus V A; Zucolotto, Valtencir; Oliveira, Osvaldo N; Silva, Welter C

2009-07-07

The concept of constitutional dynamic chemistry (CDC) based on the control of non-covalent interactions in supramolecular structures is promising for having a large impact on nanoscience and nanotechnology if adequate nanoscale manipulation methods are used. In this study, we demonstrate that the layer-by-layer (LbL) technique may be used to produce electroactive electrodes with ITO coated by tetrasulfonated nickel phthalocyanine (NiTsPc) alternated with poly(allylamine hydrochloride) (PAH) incorporating gold nanoparticles (AuNP), in which synergy has been achieved in the interaction between the nanoparticles and NiTsPc. The catalytic activity toward hydrogen peroxide (H(2)O(2)) in multilayer films was investigated using cyclic voltammetry, where oxidation of H(2)O(2) led to increased currents in the PAH-AuNP/NiTsPc films for the electrochemical processes associated with the phthalocyanine ring and nickel at 0.52 and 0.81 V vs. SCE, respectively, while for PAH/NiTsPc films (without AuNP) only the first redox process was affected. In control experiments we found out that the catalytic activity was not solely due to the presence of AuNP, but rather to the nanoparticles inducing NiTsPc supramolecular structures that favored access to their redox sites, thus yielding strong charge transfer. The combined effects of NiTsPc and AuNP, which could only be observed in nanostructured LbL films, point to another avenue to pursue within the CDC paradigm.

Phase and Texture of Solution-Processed Copper Phthalocyanine Thin Films Investigated by Two-Dimensional Grazing Incidence X-Ray Diffraction

Directory of Open Access Journals (Sweden)

Lulu Deng

2011-07-01

Full Text Available The phase and texture of a newly developed solution-processed copper phthalocyanine (CuPc thin film have been investigated by two-dimensional grazing incidence X-ray diffraction. The results show that it has β phase crystalline structure, with crystallinity greater than 80%. The average size of the crystallites is found to be about 24 nm. There are two different arrangements of crystallites, with one dominating the diffraction pattern. Both of them have preferred orientation along the thin film normal. Based on the similarities to the vacuum deposited CuPc thin films, the new solution processing method is verified to offer a good alternative to vacuum process, for the fabrication of low cost small molecule based organic photovoltaics.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

Science.gov (United States)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Influence of thickness on properties of plasticized oat starch films

Directory of Open Access Journals (Sweden)

Melicia Cintia Galdeano

2013-08-01

Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

Film thickness in gas-liquid two-phase flow, (2)

International Nuclear Information System (INIS)

Sekoguchi, Kotohiko; Fukano, Toru; Kawakami, Yasushi; Shimizu, Hideo.

1977-01-01

The effect of four rectangular obstacles inserted into a circular tube has been studied in gas-liquid two-phase flow. The obstacles are set on the inner wall of the tube, and the ratio of the opening is 0.6. The water film flows partially through the obstacles. The minimum thickness of water film was measured in relation to flow speed. The serious effect of the obstacles was seen against the formation of water film, and drainage under the obstacles and backward flow play important roles. Since water film can flow partially through the obstacles, the film in case of the rectangular obstacles in thicker than that in case of an orifice when the gas flow speed was slower than 5 m/s. However, when the gas flow speed is over 5 m/s, the film thickness was thinner. The minimum film thickness of downstream of the obstacles was almost same as that in case of no obstacle. The minimum film thickness of up stream depends on the location of measurement due to the effect of drainage. (Kato, T.)

Hybrid Solar Cell with TiO2 Film: BBOT Polymer and Copper Phthalocyanine as Sensitizer

Directory of Open Access Journals (Sweden)

Saptadip Saha

2016-01-01

Full Text Available An organic-inorganic hybrid solar cell was fabricated using Titanium dioxide (TiO2: 2,5-bis(5-tert-butyl-2-benzoxazolyl thiophene (BBOT film and Copper Phthalocyanine (CuPc as a sensitizer. BBOT was used in photodetector in other reported research works, but as per best of our knowledge, it was not implemented in solar cells till date. The blend of TiO2: BBOT blend was used to fabricate the film on ITO-coated glass and further a thin layer of CuPc was coated on the film. This was acted as photoanode and another ITO coated glass with a platinum coating was used as a counter electrode (cathode. An optimal blend of acetonitrile (solvent (50-100%, 1,3-dimethylimidazolium iodide (10-25%, iodine (2.5-10% and lithium iodide, pyridine derivative and thiocyanate was used as electrolytes in the hybrid solar cell. The different structural, optical and electrical characteristics were measured. The Hybrid solar cell showed a maximum conversion efficiency of 6.51%.

One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

International Nuclear Information System (INIS)

Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K

2006-01-01

A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity

Barium titanate thick films prepared by screen printing technique

Directory of Open Access Journals (Sweden)

Mirjana M. Vijatović

2010-06-01

Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

Temperature- and thickness-dependent elastic moduli of polymer thin films

Directory of Open Access Journals (Sweden)

Ao Zhimin

2011-01-01

Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

Metal-phthalocyanine ordered layers on Au(110): Metal-dependent adsorption energy

Energy Technology Data Exchange (ETDEWEB)

Massimi, Lorenzo, E-mail: lorenzo.massimi@uniroma1.it; Angelucci, Marco; Gargiani, Pierluigi; Betti, Maria Grazia [Dipartimento di Fisica, Università di Roma La “Sapienza,” 00185 Roma (Italy); Montoro, Silvia [IFIS Litoral, CONICET-UNL, Laboratorio de Fisica de Superficies e Interfaces, Güemes 3450, Santa Fe (Argentina); Mariani, Carlo, E-mail: carlo.mariani@uniroma1.it [Dipartimento di Fisica, CNISM, Università di Roma La “Sapienza,” 00185 Roma (Italy)

2014-06-28

Iron-phthalocyanine and cobalt-phthalocyanine chains, assembled along the Au(110)-(1×2) reconstructed channels, present a strong interaction with the Au metallic states, via the central metal ion. X-ray photoemission spectroscopy from the metal-2p core-levels and valence band high-resolution ultraviolet photoelectron spectroscopy bring to light signatures of the interaction of the metal-phthalocyanine single-layer with gold. The charge transfer from Au to the molecule causes the emerging of a metal-2p core level component at lower binding energy with respect to that measured in the molecular thin films, while the core-levels associated to the organic macrocycle (C and N 1s) are less influenced by the adsorption, and the macrocycles stabilize the interaction, inducing a strong interface dipole. Temperature Programmed Desorption experiments and photoemission as a function of temperature allow to estimate the adsorption energy for the thin-films, mainly due to the molecule-molecule van der Waals interaction, while the FePc and CoPc single-layers remain adsorbed on the Au surface up to at least 820 K.

Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Sukon Phanichphant

2007-02-01

Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

Surface properties of self-assembled monolayer films of tetra-substituted cobalt, iron and manganese alkylthio phthalocyanine complexes

Energy Technology Data Exchange (ETDEWEB)

Akinbulu, Isaac Adebayo; Khene, Samson [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.z [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa)

2010-09-30

Self-assembled monolayer (SAM) films of iron (SAM-1), cobalt (SAM-2) and manganese (SAM-3) phthalocyanine complexes, tetra-substituted with diethylaminoethanethio at the non-peripheral positions, were formed on gold electrode in dimethylformamide (DMF). Electrochemical, impedimentary and surface properties of the SAM films were investigated. Cyclic voltammetry was used to investigate the electrochemical properties of the films. Ability of the films to inhibit common faradaic processes on bare gold surface (gold oxidation, solution redox chemistry of [Fe(H{sub 2}O){sub 6}]{sup 3+}/[Fe(H{sub 2}O){sub 6}]{sup 2+} and underpotential deposition (UDP) of copper) was investigated. Electrochemical impedance spectroscopy (EIS), using [Fe(CN){sub 6}]{sup 3-/4-} redox process as a probe, offered insights into the electrical properties of the films/electrode interfaces. Surface properties of the films were probed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The films were employed for the electrocatalytic oxidation of the pesticide, carbofuran. Electrocatalysis was evidenced from enhanced current signal and less positive oxidation potential of the pesticide on each film, relative to that observed on the bare gold electrode. Mechanism of electrocatalytic oxidation of the pesticide was studied using rotating disc electrode voltammetry.

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films

Energy Technology Data Exchange (ETDEWEB)

Krishna, H; Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Sachan, R; Strader, J; Kalyanaraman, R [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Khenner, M, E-mail: ramki@utk.edu [Department of Mathematics, Western Kentucky University, Bowling Green, KY 42101 (United States)

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO{sub 2} under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm {<=} h {<=} 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm {<=} h {<=} 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO{sub 2}. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

A new attempt of measurement film thickness by x-ray diffractometry

International Nuclear Information System (INIS)

Kosaka, Masao; Kobayashi, Hideo

1987-01-01

In order to make film thickness measurements independent from the property or the structure of the film materials or the substrate, it is needed to adopt instead of directly utilizing the X-ray diffraction intensity, or attenuation information obtained from the substrate or film material, other new methods for measurement. Among the information obtained by X-ray diffraction, if intensity is excluded, others are F.W.H.M. and diffraction angle, only. If it is possible to investigate the film thickness dependency of the diffraction angle, it should be possible to measure the film thickness by diffraction angle. However, since diffraction angle has no film thickness dependency, it cannot be used directly for measurement. However, if we consider the principle of the X-ray diffractometer method, although it may be very slight, the substrate will be eccentric from the revolving center of the goniometer on account of the thickness of the film. If eccentricity occurs, this will cause changes in the diffraction angle. If we set the radius of the goniometer as R, diffraction angle θ, and the eccentricity from the revolving center of the specimen surface X, the deflection angle Δ2θ of 2θ may be expressed by Δ2θ = -2X · COSθ/R Thus, if X is caused by the film thickness, and by measuring the Δ2θ, it will be possible to measure the film thickness. As a result of the experiment, it was found that X-ray diffraction method can be used for the measurement of the film thickness of a few microns or above by utilizing the eccentricity caused by the film thickness. Especially it has the advantage of being able to measure thick films that X-rays will not penetrate, without being influenced by the chemical structure of the film or the substrates. (author)

Film thickness determining method of the silicon isotope superlattices by SIMS

International Nuclear Information System (INIS)

Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

2008-01-01

It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

Effect of thickness on optical properties of thermally evaporated SnS films

International Nuclear Information System (INIS)

Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.

2013-01-01

The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness

Photoconductivity study of acid on Zinc phthalocyanine pyridine thin films

Science.gov (United States)

Singh, Sukhwinder; Saini, G. S. S.; Tripathi, S. K.

2016-05-01

The Metal Phthalocyanine (MPc) have attracted much interest because of chemical and high thermal stability. Molecules forming a crystal of MPc are held together by weak attractive Vander Waals forces. Organic semiconductors have π conjugate bonds which allow electrons to move via π-electron cloud overlaps. Conduction mechanisms for organic semiconductor are mainly through tunneling; hopping between localized states, mobility gaps, and phonon assisted hopping. The photo conductivity of thin films of these complexes changes when exposed to oxidizing and reducing gases. Arrhenius plot is used to find the thermal activation energy in the intrinsic region and impurity scattering region. Arrhenius plotsare used to find the thermal activation energy. The original version of this article supplied to AIP Publishing contained erroneous text at the end of the abstract. "Arrhenius plots are used to find the thermal activation energy." was deleted as it does not pertain to the article. In addition, a figure citation was cited incorrectly and an equation was missing. This has been corrected in the updated version republished on 4 December 2017.

Electroplated thick-film cobalt platinum permanent magnets

International Nuclear Information System (INIS)

Oniku, Ololade D.; Qi, Bin; Arnold, David P.

2016-01-01

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

High-throughput measurement of polymer film thickness using optical dyes

Science.gov (United States)

Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

2005-01-01

Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

Film-thickness dependence of structure formation in ultra-thin polymer blend films

CERN Document Server

Gutmann, J S; Stamm, M

2002-01-01

We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

Science.gov (United States)

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Perfluorinated cobalt phthalocyanine effectively catalyzes water electrooxidation

KAUST Repository

Morlanes, Natalia Sanchez

2014-12-08

Efficient electrocatalysis of water oxidation under mild conditions at neutral pH was achieved by a fluorinated cobalt phthalocyanine immobilized on fluorine-doped tin oxide (FTO) surfaces with an onset potential at 1.7 V vs. RHE. Spectroscopic, electrochemical, and inhibition studies indicate that phthalocyanine molecular species are the operational active sites. Neither free cobalt ions nor heterogeneous cobalt oxide particles or films were observed. During long-term controlled-potential electrolysis at 2 V vs. RHE (phosphate buffer, pH 7), electrocatalytic water oxidation was sustained for at least 8 h (TON ≈ 1.0 × 105), producing about 4 μmol O2 h-1 cm-2 with a turnover frequency (TOF) of about 3.6 s-1 and no measurable catalyst degradation.

Nano-Hydroxyapatite Thick Film Gas Sensors

International Nuclear Information System (INIS)

Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P.

2011-01-01

In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

Self-Poling of BiFeO3 Thick Films.

Science.gov (United States)

Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

Electroplated thick-film cobalt platinum permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

2016-10-15

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

Measurement of the thickness of thin films by backscattered protons

International Nuclear Information System (INIS)

Samaniego, L.E.Q.

1976-07-01

The method of backscattered protons has been used to measure the thickness of thin films. A monoenergetic beam of protons is directed on the film to be measured and the backscattered protons are detected with a particle detector. The film thickness is calculated from the energy spectrum of the protons. In the case of films consisting of several layers of elements with well separated atomic masses, it is possible to separate the spectra of protons scattered from the different elements, permitting a measurement of the thicknesses of the different layers. The method consists of calculating the energy loss of the protons throughout their trajectory, from the point of incidence on the film to the final detection. Thicknesses were measured for the following film combinations: gold on mylar, chromium on mylar, gold on chromium on mylar, and pure mylar. (Author) [pt

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

International Nuclear Information System (INIS)

Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

2011-01-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

Science.gov (United States)

Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

2011-10-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Science.gov (United States)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Intrinsic flux pinning mechanisms in different thickness MgB2 films

Directory of Open Access Journals (Sweden)

C. Yang

2017-03-01

Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

Science.gov (United States)

Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

2014-08-01

We report the appearance of ferromagnetism in thin films of Pd(100), which depends on film thickness in the range of 3-5 nm on SrTiO3(100) substrates. X-ray magnetic circular dichroism measurement shows the intrinsic nature of ferromagnetism in Pd(100) films. The spontaneous magnetization in Pd(100) films, corresponding to is 0.61μB/atom, is comparable to Ni, and it changes in an oscillatory manner depending on film thickness, where the period quantitatively agrees with the theoretical prediction based on the two-dimensional quantum well in the film. This indicates that the discrete electronic states in the quantum well shift to Fermi energy to satisfy the condition for ferromagnetism (Stoner criterion) at a specific film thickness.

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

Directory of Open Access Journals (Sweden)

Arturo Rodríguez Gómez

2014-09-01

Full Text Available The interest of microelectronics industry in new organic compounds for the manufacture of luminescent devices has increased substantially in the last decade. In this paper, we carried out a study of the usage feasibility of three organic bidentate ligands (2,6-dihydroxyanthraquinone, anthraflavic acid and potassium derivative salt of anthraflavic acid for the synthesis of an organic semiconductor based in silicon phthalocyanines (SiPcs. We report the visible photoluminescence (PL at room temperature obtained from thermal-evaporated thin films of these new materials. The surface morphology of these films was analyzed by atomic force microscopy (AFM and scanning electron microscopy (SEM. AFM indicated that the thermal evaporation technique is an excellent resource in order to obtain low thin film roughness when depositing these kinds of compounds. Fourier transform infrared spectroscopy (FTIR spectroscopy was employed to investigate possible changes in the intra-molecular bonds and to identify any evidence of crystallinity in the powder compounds and in the thin films after their deposition. FTIR showed that there was not any important change in the samples after the thermal deposition. The absorption coefficient (α in the absorption region reveals non-direct transitions. Furthermore, the PL of all the investigated samples were observed with the naked eye in a bright background and also measured by a spectrofluorometer. The normalized PL spectra showed a Stokes shift ≈ 0.6 eV in two of our three samples, and no PL emission in the last one. Those results indicate that the Vis PL comes from a recombination of charge carriers between conduction band and valence band preceded by a non-radiative relaxation in the conduction band tails.

A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference

OpenAIRE

Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.

2001-01-01

A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a “hybrid†chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...

Development of a Novel Biosensor Using Cationic Antimicrobial Peptide and Nickel Phthalocyanine Ultrathin Films for Electrochemical Detection of Dopamine

Directory of Open Access Journals (Sweden)

Maysa F. Zampa

2012-01-01

Full Text Available The antimicrobial peptide dermaseptin 01 (DS 01, from the skin secretion of Phyllomedusa hypochondrialis frogs, was immobilized in nanostructured layered films in conjunction with nickel tetrasulfonated phthalocyanines (NiTsPc, widely used in electronic devices, using layer-by-layer technique. The films were used as a biosensor to detect the presence of dopamine (DA, a neurotransmitter associated with diseases such as Alzheimer's and Parkinson's, with detection limits in the order of 10−6 mol L−1. The use of DS 01 in LbL film generated selectivity in the detection of DA despite the presence of ascorbic acid found in biological fluids. This work is the first to report that the antimicrobial peptide and NiTsPc LbL film exhibits electroanalytical activity to DA oxidation. The selectivity in the detection of DA is a fundamental aspect for the development of electrochemical sensors with potential applications in the biomedical and pharmaceutical industries.

Order in nanometer thick intergranular films at Au-sapphire interfaces

Energy Technology Data Exchange (ETDEWEB)

Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2011-08-15

Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

International Nuclear Information System (INIS)

Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

2008-01-01

Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

Thickness dependent ferromagnetism in thermally decomposed NiO thin films

Energy Technology Data Exchange (ETDEWEB)

Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

2016-11-15

We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

A method to measure the mean thickness and non-uniformity of non-uniform thin film by alpha-ray thickness gauge

International Nuclear Information System (INIS)

Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

1977-01-01

The α-ray thickness gauge is used to measure non-destructively the thicknesses of thin films, and up to the present day, a thin film with uniform thickness is only taken up as the object of α-ray thickness gauge. When the thickness is determined from the displacement between the absorption curves in the presence and absence of thin film, the absorption curve must be displaced in parallel. When many uniform particles were dispersed as sample, the shape of the absorption curve was calculated as the sum of many absorption curves corresponding to the thin films with different thicknesses. By the comparison of the calculated and measured absorption curves, the number of particles, or the mean superficial density can be determined. This means the extension of thickness measurement from uniform to non-uniform films. Furthermore, these particle models being applied to non-uniform thin film, the possibility of measuring the mean thickness and non-uniformity was discussed. As the result, if the maximum difference of the thickness was more than 0.2 mg/cm 2 , the nonuniformity was considered to distinguish by the usual equipment. In this paper, an α-ray thickness gauge using the absorption curve method was treated, but one can apply this easily to an α-ray thickness gauge using α-ray energy spectra before and after the penetration of thin film. (auth.)

Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

Science.gov (United States)

Singh, N.; Sharma, S.

2018-04-01

Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

Percolation effect in thick film superconductors

Energy Technology Data Exchange (ETDEWEB)

Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

1994-12-31

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

Percolation effect in thick film superconductors

International Nuclear Information System (INIS)

Sali, R.; Harsanyi, G.

1994-01-01

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T c and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm 2 . The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

Thickness dependence of J_c (0) in MgB_2 films

International Nuclear Information System (INIS)

Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

2016-01-01

Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

A Study on the Thickness Measurement of Thin Film by Ultrasonic Wave

International Nuclear Information System (INIS)

Han, Eung Kyo; Lee, Jae Joon; Kim, Jae Yeol

1988-01-01

Recently, it is gradually raised necessity that thickness of thin film is measured accurately and managed in industrial circles and medical world. In this study, regarding to the thickness of film which is in opaque object and is beyond distance resolution capacity, thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measurement results, film thickness which is beyond distance resolution capacity was measured accurately. And within thickness range that don't exist interference, thickness measurement by MEM-ceptrum analysis was impossible

Anomalous size effect in conductivity of Bi films of small thickness

International Nuclear Information System (INIS)

Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

1995-01-01

Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

Hexaferrite multiferroics: from bulk to thick films

Science.gov (United States)

Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

2018-03-01

We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

Energy Technology Data Exchange (ETDEWEB)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

2016-02-21

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

International Nuclear Information System (INIS)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

2016-01-01

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

The effect of bubble acceleration on the liquid film thickness in micro tubes

Energy Technology Data Exchange (ETDEWEB)

Han, Youngbae, E-mail: bhan@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan); Shikazono, Naoki, E-mail: shika@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan)

2010-08-15

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

The effect of bubble acceleration on the liquid film thickness in micro tubes

International Nuclear Information System (INIS)

Han, Youngbae; Shikazono, Naoki

2010-01-01

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

Science.gov (United States)

You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

2010-09-21

Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

Low voltage operating OFETs based on solution processed metal phthalocyanines

Czech Academy of Sciences Publication Activity Database

Chaidogiannos, G.; Petraki, F.; Glezos, N.; Kennou, S.; Nešpůrek, Stanislav

2009-01-01

Roč. 96, č. 3 (2009), s. 763-767 ISSN 0947-8396 R&D Projects: GA AV ČR KAN400720701 Institutional research plan: CEZ:AV0Z40500505 Keywords : field-effect transistors * thin-film transistors * copper phthalocyanine Subject RIV: CG - Electrochemistry Impact factor: 1.595, year: 2009

Effect of iodine doping of phthalocyanine on the photocurrent generation in a phthalocyanine/C{sub 60} heterojunction

Energy Technology Data Exchange (ETDEWEB)

Mizuta, Shinsei; Iyota, Masatoshi; Tanaka, Senku; Hiromitsu, Ichiro, E-mail: hiromitu@riko.shimane-u.ac.jp

2012-06-30

Photocurrent generation in an indium-tin oxide (ITO)/iodine-doped Ni-phthalocyanine (NiPc-I{sub x})/C{sub 60}/In/Al heterojunction device with x {approx} 1 was studied. By keeping the device in air after preparation, the device slowly reached a stationary state in which the sign of the photocurrent is opposite to that of a non-doped ITO/NiPc/C{sub 60}/In/Al device although the rectification direction for the dark current is the same. By a simulation of incident photon-to-current conversion efficiency spectra and a measurement of internal electric field by electroabsorption spectroscopy, it was elucidated that, in the doped device, the band bending near the phthalocyanine/C{sub 60} interface is absent and the photocurrent is generated by a weak Schottky barrier at the C{sub 60}/In interface. It is also shown that the C{sub 60} film encapsulates the doped iodine into the NiPc-I{sub x} layer to stabilize the doping level and prevent the reaction of iodine with In. - Highlights: Black-Right-Pointing-Pointer The C{sub 60} film deposited on a NiPc-I{sub x} film encapsulates the doped iodine. Black-Right-Pointing-Pointer An iodine-doped device generates a photocurrent of inverted direction. Black-Right-Pointing-Pointer The internal electric field is also inverted. Black-Right-Pointing-Pointer The activity of photocurrent generation at the heterojunction is quenched. Black-Right-Pointing-Pointer Photocurrent is generated at the C{sub 60}/In interface.

Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

KAUST Repository

Oba, Tatsuya

2012-06-19

We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

MEMS-based thick film PZT vibrational energy harvester

DEFF Research Database (Denmark)

Lei, Anders; Xu, Ruichao; Thyssen, Anders

2011-01-01

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

Investigation of top electrode for PZT thick films based MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.

2010-01-01

In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...... to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong...... influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less...

Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

Directory of Open Access Journals (Sweden)

Robert Koncki

2006-04-01

Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

International Nuclear Information System (INIS)

Qiao Shi-Zhu; Kang Shi-Shou; Li Qiang; Zhong Hai; Kang Yun; Yu Shu-Yun; Han Guang-Bing; Yan Shi-Shen; Mei Liang-Mo; Qin Yu-Feng

2014-01-01

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al 2 O 3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. (interdisciplinary physics and related areas of science and technology)

Thick-film effects in the oxidation and hydriding of zirconium alloys

International Nuclear Information System (INIS)

Johnson, A.B. Jr.

1989-08-01

One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

International Nuclear Information System (INIS)

Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

2014-01-01

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

Energy Technology Data Exchange (ETDEWEB)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

Science.gov (United States)

Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

2018-05-01

We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

Synthesis, structure, and optical properties of manganese phthalocyanine thin films and nanostructures

Directory of Open Access Journals (Sweden)

Lu Meng

2017-06-01

Full Text Available Manganese phthalocyanine (MnPc nanostructures with different morphologies were prepared on porous anodic alumina oxide (AAO at different substrate temperature (Ts=50 ℃, 80 ℃, 120 ℃, 180 ℃, 240 ℃ in an organic molecular beam deposition (OMBD system. The nanostructures morphologies were studied using scanning electron microscopy (SEM and the results showed that the nanostructures morphologies could be modulated by the control of Ts, as a result, the continuous film was obtained at 50 ℃, whereas the nanorods (NRs, nanoribbons (NBs, nanowires (NWs, nanosheets (NSs and nanoparticles (NPs were facilely generated as Ts increased. At the same time, the density and the uniformity of the nanostructures decreased. The results of X-ray diffraction (XRD indicated that only the β-phase polymorph formed throughout the growth process irrelevant to the Ts. Additionally, the ultraviolet visible (UV–Vis absorption spectra demonstrated that the main absorption bands of MnPc nanostructures showed a remarkable band broadening as the Ts was increased.

Imaging and thickness measurement of amorphous intergranular films using TEM

International Nuclear Information System (INIS)

MacLaren, I.

2004-01-01

Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

Directory of Open Access Journals (Sweden)

Kuo-Ching Kuo

2007-04-01

Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Phelan, P.E.; Chen, G.; Tien, C.L.

1991-01-01

Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

Thickness dependence of Hall mobility of HWE grown PbTe films

International Nuclear Information System (INIS)

Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

1985-01-01

Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

Thickness of residual wetting film in liquid-liquid displacement

Science.gov (United States)

Beresnev, Igor; Gaul, William; Vigil, R. Dennis

2011-08-01

Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

Comparison of different methods for measuring the passive film thickness on metals

International Nuclear Information System (INIS)

Benoit, Marie; Bataillon, Christian; Gwinner, Benoit; Miserque, Frédéric; Orazem, Mark E.; Sánchez-Sánchez, Carlos M.; Tribollet, Bernard; Vivier, Vincent

2016-01-01

Highlights: • In situ EIS and ex situ XPS were used for the characterization of zirconium oxide films. • The film thicknesses can be obtained from the analysis of a single EIS diagram. • A convenient graphical method to extract film properties is proposed. - Abstract: In situ electrochemical impedance spectroscopy (EIS) and ex situ X-ray photoelectron spectroscopy (XPS) measurements on electrogenerated zirconium oxide films on zirconium (Zr/ZrO_2) were used to quantify the oxide film thickness and resistivity profiles through the oxide. The EIS analysis presented here takes advantage of the high-frequency domain at which the constant-phase element (CPE) behavior of the oxide film reverts to a capacitive response and the Cole-Cole representations of the complex capacitance to extract the high-frequency capacitance of the oxide film without reference to the nature of the time-constant distribution within the oxide film. The film thickness of the ZrO_2 samples measured from the high-frequency capacitance of EIS were in good agreement with the thickness obtained from XPS. Moreover, the EIS analysis presented is based on the use of the integral solution of the power law model, which allows to obtain in one single EIS experiment, both the film thickness and the resistivity profile in the ZrO_2 film. This work suggests a convenient graphical method to extract film properties and serves to validate a key assumption of the power-law model for interpretation of CPE parameters in terms of physical properties.

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei; Chen, Qian; Shan, Hai-Quan; Xu, Zong-Xiang, E-mail: xu.zx@sustc.edu.cn, E-mail: val.roy@cityu.edu.hk [Department of Chemistry, South University of Science and Technology of China, Shenzhen, Guangdong, P. R. China, 518055 (China); Yan, Yan; Roy, V. A. L., E-mail: xu.zx@sustc.edu.cn, E-mail: val.roy@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (Hong Kong)

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc is a promising HIL material for highly efficient OLEDs.

Tetra-methyl substituted copper (II phthalocyanine as a hole injection enhancer in organic light-emitting diodes

Directory of Open Access Journals (Sweden)

Yu-Long Wang

2015-10-01

Full Text Available We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc is a promising HIL material for highly efficient OLEDs.

Application of β plastic film thickness gauge in automatic production of agricultural film

International Nuclear Information System (INIS)

Liu Longzhi; Guo Juhao

1996-01-01

The author briefly explains the importance of agricultural film at home, and mainly explains the measuring principles of plastic film thickness, the design of β detector, the temperature compensation technology and the design of automatic control device

The determination of the pressure-viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements : part 2 : high L values

NARCIS (Netherlands)

Leeuwen, van H.J.

2011-01-01

The pressure-viscosity coefficient of a traction fluid is determined by fitting calculation results on accurate film thickness measurements, obtained at different speeds, loads, and temperatures. Through experiments, covering a range of 5.6 film thickness values are

Supramolecular Structure, Physical Properties, and Langmuir-Blodgett Film Formation of an Optically Active Liquid-Crystalline Phthalocyanine

NARCIS (Netherlands)

Nostrum, Cornelus F. van; Bosman, Anton W.; Gelinck, Gerwin H.; Schouten, Pieter G.; Warman, John M.; Devillers, Marinus A.C.; Meijerink, Andries; Picken, Stephen J.; Sohling, Ulrich; Schouten, Arend-Jan; Nolte, Roeland J.M.

The structure and physical properties of optically active, metal-free 2,3,9,10,16,17,23,24-octa(S-3,7-dimethyloctoxy)phthalocyanine ((S)-Pc(8,2)) are reported and compared with those of the phthalocyanine with (R,S) side chains (mixture of 43 stereoisomers). Unlike the latter compound, (S)-Pc(8,2)

Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

Science.gov (United States)

Osabe, Keiichi; Kawai, Kotaro

2017-03-01

In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Science.gov (United States)

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Directory of Open Access Journals (Sweden)

Gunter Hagen

2011-08-01

Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

Interface properties of Fe/MgO/Cu-phthalocyanine metal-insulator-organic semiconductor structures

International Nuclear Information System (INIS)

Lee, Nyunjong; Bae, Yujeong; Kim, Taehee; Ito, Eisuke; Hara, Masahiko

2014-01-01

Hybrid interface structures consisting of organic copper-phthalocyanine (CuPc) and ferromagnetic metal Fe(001) with and without a MgO(001) cover were investigated by using surface sensitive techniques of X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. A systematic study of the energy level alignment at the interfaces was carried out. For the hybrid interfaces considered here, our results indicate that the insertion of an artificially-grown ultra-thin oxide layer MgO(001) can prevent Femi level pinning and induce a rather large interface dipole, thereby resulting in remarkable CuPc Fermi level shifts when the thickness of the CuPc film is less than 3 nm. This study provides a better understanding of spin filtering in MgO-based organic spin devices and a new way to alter the interface electronic structure of metal/organic semiconductor hybrid systems.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Screen-printed piezoceramic thick films for miniaturised devices

DEFF Research Database (Denmark)

Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

2007-01-01

machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

Electronic properties and orbital-filling mechanism in Rb-intercalated copper phthalocyanine

NARCIS (Netherlands)

Evangelista, F.; Gotter, R.; Mahne, N.; Nannarone, S.; Ruocco, A.; Rudolf, P.

2008-01-01

The evolution of the electronic properties of a thin film of copper phthalocyanine deposited on Al(100) and progressively intercalated with rubidium atoms was followed by photoemission and X-ray absorption spectroscopies. Electron donation from the Rb atoms to the C32H16N8Cu molecules results in the

Spectroscopic investigation of sulfonate phthalocyanine to probe enzyme reactions for heavy metals detection

Energy Technology Data Exchange (ETDEWEB)

Chaure, Shweta; Paul, Deepen; Vadagma, Pankaj [School of Engineering and Material Science, Queen Mary, University of London, London E1 4NS (United Kingdom); Ray, Asim K., E-mail: a.k.ray@qmul.ac.uk [School of Engineering and Material Science, Queen Mary, University of London, London E1 4NS (United Kingdom)

2010-01-15

Optical absorption and Raman spectra of the sulfonated copper phthalocyanine (CuTsPc) layer were exploited for detection of cadmium (Cd) contaminants in water. Acetylcholine esterase was immobilized by freely suspending them in calcium alginate microbeads and this gel was then spincoated on the drop cast sulfonated copper phthalocyanine film on a glass substrate to form a bilayer. The inhibition of catalytic reaction between acetylcholine chloride and enzyme due to Cd contaminants was monitored by recording changes in spectra of drop cast CuTsPc as an indicator. The detection limit of cadmium content in water was found to be 1 ppm.

Spectroscopic investigation of sulfonate phthalocyanine to probe enzyme reactions for heavy metals detection

International Nuclear Information System (INIS)

Chaure, Shweta; Paul, Deepen; Vadagma, Pankaj; Ray, Asim K.

2010-01-01

Optical absorption and Raman spectra of the sulfonated copper phthalocyanine (CuTsPc) layer were exploited for detection of cadmium (Cd) contaminants in water. Acetylcholine esterase was immobilized by freely suspending them in calcium alginate microbeads and this gel was then spincoated on the drop cast sulfonated copper phthalocyanine film on a glass substrate to form a bilayer. The inhibition of catalytic reaction between acetylcholine chloride and enzyme due to Cd contaminants was monitored by recording changes in spectra of drop cast CuTsPc as an indicator. The detection limit of cadmium content in water was found to be 1 ppm.

Influence of cement film thickness on the retention of implant-retained crowns.

Science.gov (United States)

Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

2013-12-01

The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

Electrochemistry and spectroelectrochemistry of tert-butylcalix[4]arene bridged bis double-decker lutetium(III) phthalocyanine, Lu2Pc4 and dimeric lutetium(III) phthalocyanine, Lu2Pc2(OAc)2

International Nuclear Information System (INIS)

Koca, Atif; Ceyhan, Tanju; Erbil, Mehmet K.; Ozkaya, Ali Riza; Bekaroglu, Ozer

2007-01-01

In this study, electrochemical, electrochromic and spectroelectrochemical properties of a tert-butylcalix[4]arene bridged bis double-decker lutetium(III) phthalocyanine (Lu 2 Pc 4 2) were investigated explicitly as compared with a tert-butylcalix[4]arene bridged dimeric lutetium(III) phthalocyanine [Lu 2 Pc 2 (OAc) 2 1]. Distinctive differences between electrochemical and electrochromic properties of 1 and 2 were detected. Moreover, the properties of 1 and 2 were compared with previously reported S 4 (CH 2 ) 4 bridged Lu 2 Pc 2 (OAc) 2 and Lu 2 Pc 4 . The calixarene bridged phthalocyanine (Pc) compounds, 1 and 2 showed well-defined electrochromic behaviour with green-blue and blue-purple colour transitions. The enhanced electrochromic properties of 2, as compared to 1, were attributed to its double-decker structure, probably allowing the formation of suitable ion channels for the counter ion movement in the solid film

Fabrication of thick superconducting films by decantation

Directory of Open Access Journals (Sweden)

Julián Betancourt M.

1991-07-01

Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

Properties of conductive thick-film inks

Science.gov (United States)

Holtze, R. F.

1972-01-01

Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

Energy Technology Data Exchange (ETDEWEB)

Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-01-31

The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

Optimization of phantom backscatter thickness and lateral scatter volume for radiographic film dosimetry

International Nuclear Information System (INIS)

Srivastava, R.P.; De Wagter, C.

2012-01-01

The aim of this study is to determine the optimal backscatter thickness and lateral phantom dimension beyond the irradiated volume for the dosimetric verification with radiographic film when applying large field sizes. Polystyrene and Virtual Water™ phantoms were used to study the influence of the phantom backscatter thickness. EDR2 and XV films were used in 6 and 18 MV photon beams. The results show 11.4% and 6.4% over-response of the XV2 film when compared to the ion chamber for 6 MV 30×30 and 10×10 cm 2 field sizes, respectively, when the phantom backscatter thickness is 5 cm. For the same setup, measurements with EDR2 films indicate 8.5% and 1.7% over-response. The XV2 film response in the polystyrene phantom is about 2.0% higher than in the Virtual Water™ phantom for the 6 MV beam and 20 cm backscatter thickness. Similar results were obtained for EDR2 film. In the lateral scatter study, film response was nearly constant within 5 cm of lateral thickness and it increases when lateral thickness increases due to more multiple scatter of low energy photons. The backscatter thickness of the phantom should be kept below 7 cm for the accuracy of the film dosimetry. The lateral extension of the phantom should not be more than 5 cm from the field boundary in case of large irradiated volumes.

Effect of thickness on structural and electrical properties of Al-doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

Effect of thickness on structural and electrical properties of Al-doped ZnO films

International Nuclear Information System (INIS)

Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

Metallic oxide switches using thick film technology

Science.gov (United States)

Patel, D. N.; Williams, L., Jr.

1974-01-01

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Persistent quantum-size effect in aluminum films up to twelve atoms thick

International Nuclear Information System (INIS)

Boettger, J.C.

1996-01-01

Total energies and work functions have been calculated for unrelaxed, free-standing Al(111) films, 1 endash 12 layers thick, using the all-electron, full-potential linear combination of Gaussian-type orbitals endash fitting-function technique. The work function exhibits a significant quantum-size effect (at least 0.1 eV) over the entire range of thickness considered. This result contradicts an old prediction that the work function of an Al(111) N-layer film will converge to within a few hundredths of an eV by N=6. The present result, which is consistent with earlier jellium calculations, demonstrates the risk of mistaking an accidental coincidence of work functions for two films, differing in thickness by one layer, for a true convergence with respect to thickness. The implications for thin-film calculations of surface properties are discussed. A linear fit to the film binding energy vs thickness is used to extract the Al(111) surface energy (0.45 eV) and the binding energy of bulk Al (4.06 eV). copyright 1996 The American Physical Society

Mems-based pzt/pzt bimorph thick film vibration energy harvester

DEFF Research Database (Denmark)

Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

2011-01-01

We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

Science.gov (United States)

Krantz, Timothy Lewis

2013-01-01

The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

The research of device for measuring film thickness of intelligent coating machine

Directory of Open Access Journals (Sweden)

Wang Wanjun

2015-01-01

Full Text Available Ion beam sputtering machine uses computer to real time monitor the change of film thickness in the preparation process of soft X ray multilayer element fabrication. It solves the problems of uneven film thickness and too thick film thickness and so on, which exist in the original preparation process. The high-precision quartz crystal converts film thickness measurement into frequency measurement. The equal precision frequency meter based on FPGA measures the frequency. It can reduce the signal delay and interference signal of discrete components, accordingly improving the accuracy of measurement. Then it sents the count value to the host computer through the single chip microcomputer serial port. It calculates and displays the value by the GUI of LabVIEW. The experimental results show that, the relative measurement error can be decreased to 1/10, i.e., the measurement accuracy can be improved by more than ten times.

Supramolecular architectures of iron phthalocyanine Langmuir-Blodgett films: The role played by the solution solvents

Science.gov (United States)

Rubira, Rafael Jesus Gonçalves; Aoki, Pedro Henrique Benites; Constantino, Carlos José Leopoldo; Alessio, Priscila

2017-09-01

The developing of organic-based devices has been widely explored using ultrathin films as the transducer element, whose supramolecular architecture plays a central role in the device performance. Here, Langmuir and Langmuir-Blodgett (LB) ultrathin films were fabricated from iron phthalocyanine (FePc) solutions in chloroform (CHCl3), dichloromethane (CH2Cl2), dimethylformamide (DMF), and tetrahydrofuran (THF) to determine the influence of different solvents on the supramolecular architecture of the ultrathin films. The UV-vis absorption spectroscopy shows a strong dependence of the FePc aggregation on these solvents. As a consequence, the surface pressure vs. mean molecular area (π-A) isotherms and Brewster angle microscopy (BAM) reveal a more homogeneous (surface morphology) Langmuir film at the air/water interface for FePc in DMF. The same morphological pattern observed for the Langmuir films is preserved upon LB deposition onto solid substrates. The Raman and FTIR analyses indicate the DMF-FePc interaction relies on coordination bonds between N atom (from DMF) and Fe atom (from FePc). Besides, the FePc molecular organization was also found to be affected by the DMF-FePc chemical interaction. It is interesting to note that, if the DMF-FePc leads to less aggregated FePc either in solution or ultrathin films (Langmuir and LB), with time (one week) the opposite trend is found. Taking into account the N-Fe interaction, the performance of the FePc ultrathin films with distinct supramolecular architectures composing sensing units was explored as proof-of-principle in the detection of trace amounts of atrazine herbicide in water using impedance spectroscopy. Further statistical and computational analysis reveal not only the role played by FePc supramolecular architecture but also the sensitivity of the system to detect atrazine solutions down to 10-10 mol/L, which is sufficient to monitor the quality of drinking water even according to the most stringent international

CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

Directory of Open Access Journals (Sweden)

D. N. CHAVAN

2011-06-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

Hydroxyapatite screen-printed thick films: optical and electrical properties

International Nuclear Information System (INIS)

Silva, C.C.; Rocha, H.H.B.; Freire, F.N.A.; Santos, M.R.P.; Saboia, K.D.A.; Goes, J.C.; Sombra, A.S.B.

2005-01-01

In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al 2 O 3 substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials

Hydroxyapatite screen-printed thick films: optical and electrical properties

Energy Technology Data Exchange (ETDEWEB)

Silva, C.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Rocha, H.H.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Freire, F.N.A. [Departamento de Quimica Orga-circumflex nica e Inorga-circumflex nica-UFC, Caixa Postal 6030, CEP 60455-760, Fortaleza, Ceara (Brazil); Santos, M.R.P. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Saboia, K.D.A. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Goes, J.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Sombra, A.S.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil)]. E-mail: sombra@fisica.ufc.br

2005-07-15

In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al{sub 2}O{sub 3} substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials.

Thick-Film and LTCC Passive Components for High-Temperature Electronics

Directory of Open Access Journals (Sweden)

A. Dziedzic

2013-04-01

Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

Gas Sensing Performance of Pure and Modified BST Thick Film Resistor

Directory of Open Access Journals (Sweden)

G. H. JAIN

2008-04-01

Full Text Available Barium Strontium Titanate (BST-(Ba0.87Sr0.13TiO3 ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The pure BST film was surface modified by surfactant CrO3 by using dipping technique. The surface modified film suppresses the response to ammonia and enhances to H2S gas. The surface modification of films changes the adsorption-desorption relationship with the target gas and shifts its selectivity. The gas response, selectivity, response and recovery time of the pure and modified films were measured and presented.

Studies on Gas Sensing Performance of Cr-doped Indium Oxide Thick Film Sensors

Directory of Open Access Journals (Sweden)

D. N. Chavan

2011-02-01

Full Text Available A series of In1-xCrxO3 composites, with x ranging from 0.01 to 0.5wt% were prepared by mechanochemically starting from InCl3 and CrO3. Structural and micro structural characteristics of the sample were investigated by XRD, SEM with EDAX. Thick films of pure Indium Oxide and composites were prepared by standard screen printing technique. The gas sensitivity of these thick films was tested for various gases. The pure Indium Oxide thick film (x=0 shows maximum sensitivity to ethanol vapour (80 ppm at 350 oC, but composite-A (x=0.01 thick film shows maximum sensitivity to H2S gas (40 ppm at 250 oC, composite-B (x=0.1 thick film shows higher sensitivity to NH3 gas (80 ppm at 250 oC and composite-C (x=0.5 thick film shows maximum sensitivity to Cl2 gas (80 ppm at 350 oC. A systematic study of gas sensing performance of the sensors indicates the key role played by concentration variation of Cr doped species. The sensitivity, selectivity and recovery time of the sensor were measured and presented.

Thickness-dependence of optical constants for Ta2O5 ultrathin films

International Nuclear Information System (INIS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-01-01

An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

Thickness-dependence of optical constants for Ta2O5 ultrathin films

Science.gov (United States)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Thin dielectric film thickness determination by advanced transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

2003-09-01

High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

Energy Technology Data Exchange (ETDEWEB)

Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

2010-02-15

The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

Science.gov (United States)

Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

2018-04-01

Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

Energy Technology Data Exchange (ETDEWEB)

Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

2014-07-21

A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

Science.gov (United States)

You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

2013-06-28

The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

2012-01-01

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

Energy Technology Data Exchange (ETDEWEB)

Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

2012-09-01

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

International Nuclear Information System (INIS)

Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

2013-01-01

Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

Ethanol vapour sensing properties of screen printed WO 3 thick films

Indian Academy of Sciences (India)

The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery ...

Towards a new thickness-independent gamma radiation plastic film dosimeter

International Nuclear Information System (INIS)

Vieira, Marli Barbosa; Araujo, Patricia L.; Araujo, Elma S.

2013-01-01

A 100% national single-use gamma radiation plastic film dosimeter is presented in this work. A new approach for the development of this material allowed a step forward in the performance of poly (methyl metacrylate) films (PMMA) colored with bromothymol blue (BTB) acid-base indicator. We manage to improve dosimeter performance by introducing a gamma radiation insensitive dye to compensate film thickness variations. By doing so, we were able to obtain consistent dose-response correlations within a set of samples presenting 46 to 110 micrometers in thickness. Hence, our PMMA/BTB-P film dosimeter is suitable to measure absorbed dose in the 2-100kGy range even when film thickness undergoes more than 100% of variation. In addition, dose response data remain practically unaltered for four months after the exposure, when dosimeter films are kept in dark conditions and under refrigeration. The radiation effects on the optical properties were evaluated for Ultraviolet-Visible (UV-Vis) spectrophotometric analysis. Data of characteristic dose-response correlation in terms of changes in the maximum UV-Vis absorption due to radiation, and stability in time are also described. This potential new product is a promising tool for industrial radiation facilities, especially in gamma sterilization of medical supplies. (author)

Electro-physical properties of superconducting ceramic thick film prepared by partial melting method.

Science.gov (United States)

Lee, Sang Heon

2013-05-01

BiSrCaCuO superconductor thick films were prepared at several curing temperatures, and their electro-physical properties were determined to find an optimum fabrication conditions. Critical temperatures of the superconductors were decreased with increasing melting temperature, which was related to the amount of equilibrium phases of the superconducting materials with temperature. The critical temperature of BiSrCaCuO bulk and thick film superconductors were 107 K and 96 K, respectively. The variation of susceptibility of the superconductor thick film formed at 950 degrees C had multi-step-type curve for 70 G externally applied field, whereas, a superconductor thick film formed at 885 degrees C had a single step-type curve like a bulk BiSrCaCuO ceramic superconductor in the temperature-susceptibility curves. A partial melting at 865 degrees C is one of optimum conditions for making a superconductor thick film with a relatively homogeneous phase.

Double-decker phthalocyanine complex: Scanning tunneling microscopy study of film formation and spin properties

Science.gov (United States)

Komeda, Tadahiro; Katoh, Keiichi; Yamashita, Masahiro

2014-05-01

We review recent studies of double-decker and triple-decker phthalocyanine (Pc) molecules adsorbed on surfaces in terms of the bonding configuration, electronic structure and spin state. The Pc molecule has been studied extensively in surface science. A Pc molecule can contain various metal atoms at the center, and the class of the molecule is called as metal phthalocyanine (MPc). If the center metal has a large radius, like as lanthanoid metals, it becomes difficult to incorporate the metal atom inside of the Pc ring. Pc ligands are placed so as to sandwich the metal atom, where the metal atom is placed out of the Pc plane. The molecule in this configuration is called as a multilayer-decker Pc molecule. After the finding that the double-decker Pc lanthanoid complex shows single-molecule magnet (SMM) behavior, it has attracted a large attention. This is partly due to a rising interest for the ‘molecular spintronics’, in which the freedoms of spin and charge of an electron are applied to the quantum process of information. SMMs represent a class of compounds in which a single molecule behaves as a magnet. The reported blocking temperature, below which a single SMM molecule works as an quantum magnet, has been increasing with the development in the molecular design and synthesis techniques of multiple-decker Pc complex. However, even the bulk properties of these molecules are promising for the use of electronic materials, the films of multi-decker Pc molecules is less studied than those for the MPc molecules. An intriguing structural property is expected for the multi-decker Pc molecules since the Pc planes are linked by metal atoms. This gives an additional degree of freedom to the rotational angle between the two Pc ligands, and they can make a wheel-like symmetric rotation. Due to a simple and well-defined structure of a multi-decker Pc complex, the molecule can be a model molecule for molecular machine studies. The multi-decker Pc molecules can provide

Thickness control in electrophoretic deposition of WO3 nanofiber thin films for solar water splitting

International Nuclear Information System (INIS)

Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F.; Bedi, Jasbir S.; Perry, Christopher C.; Chen, Qiao

2015-01-01

Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO 3 nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO 3 nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

The beneficial effects of mixing spiro-OMeTAD with n-butyl-substituted copper phthalocyanine for perovskite solar cells

International Nuclear Information System (INIS)

Nouri, Esmaiel; Wang, Yu-Long; Chen, Qian; Xu, Jia-Ju; Dracopoulos, Vassilios; Sygellou, Lamprini; Xu, Zong-Xiang; Mohammadi, Mohammad Reza; Lianos, Panagiotis

2016-01-01

Highlights: • Soluble n-butyl substituted copper phthalocyanine. • Mixture with spiro-OMeTAD and employment in perovskite solar cells. • Impressive improvement of perovskite solar cell efficiency. • n-Butyl derivative gives better results than tert-butyl derivative - Abstract: Perovskite solar cells have been constructed under ambient conditions by using 2,2',7,7'-Tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (spiro-OMeTAD) mixed with a small quantity of soluble tetra-n-butyl substituted copper phthalocyanine as hole transporting material. The introduction of the phthalocyanine derivative resulted in an impressive increase of cell efficiency, which changed from 10.4% in the absence to 15.4% in the presence of phthalocyanine. This effect is related to the creation of deep traps in the hole transporting phase which block back-travelling electrons as well as to the improvement of the structural quality of the spiro-OMeTAD film in the presence of phthalocyanine. Both functionalities decrease shunt paths within the hole transporting phase resulting in increasing the fill factor and the open-circuit voltage of the cell.

High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

DEFF Research Database (Denmark)

Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

2010-01-01

and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

Graphene-based LbL deposited films: further study of electrical and gas sensing properties

Directory of Open Access Journals (Sweden)

Nabok A.

2017-01-01

Full Text Available Graphene-surfactant composite materials obtained by the ultrasonic exfoliation of graphite powder in the presence of ionic surfactants (either CTAB or SDS were utilised to construct thin films using layer-by-layer (LbL electrostatic deposition technique. A series of graphene-based thin films were made by alternating layers of either graphene-SDS with polycations (PEI or PAH or graphene-CTAB with polyanions (PSS. Also, graphene-phthalocyanine composite films were produced by alternating layers of graphene-CTAB with tetrasulfonated nickel phthalocyanine. Graphene-surfactant LbL films exhibited good electric conductivity (about 0.1 S/cm of semiconductor type with a band gap of about 20 meV. Judging from UV-vis spectra measurements, graphene-phthalocyanine LbL films appeared to form joint π-electron system. Gas sensing testing of such composite films combining high conductivity of graphene with the gas sensing abilities of phthalocyanines showed substantial changes (up to 10% in electrical conductivity upon exposure to electro-active gases such as HCl and NH3.

BaF2 POST-DEPOSITION REACTION PROCESS FOR THICK YBCO FILMS

International Nuclear Information System (INIS)

SUENAGA, M.; SOLOVYOV, V.F.; WU, L.; WIESMANN, H.J.; ZHU, Y.

2001-01-01

The basic processes of the so-called BaF 2 process for the formation of YBa 2 Cu 3 O 7 , YBCO, films as well as its advantages over the in situ formation processes are discussed in the previous chapter. The process and the properties of YBCO films by this process were also nicely described in earlier articles by R. Feenstra, (et al.) Here, we will discuss two pertinent subjects related to fabrication of technologically viable YBCO conductors using this process. These are (1) the growth of thick (>> 1 microm) c-axis-oriented YBCO films and (2) their growth rates. Before the detail discussions of these subjects are given, we first briefly discuss what geometrical structure a YBCO-coated conductor should be. Then, we will provide examples of simple arguments for how thick the YBCO films and how fast their growth rates need to be. Then, the discussions in the following two sections are devoted to: (1) the present understanding of the nucleation and the growth process for YBCO, and why it is so difficult to grow thick c-axis-oriented films (> 3 microm), and (2) our present understanding of the YBCO growth-limiting mechanism and methods to increase the growth rates. The values of critical-current densities J c in these films are of primary importance for the applications,. and the above two subjects are intimately related to the control of J c of the films. In general, the lower the temperatures of the YBCO formation are the higher the values of J c of the films. Thus, the present discussion is limited to those films which are reacted at ∼735 C. This is the lowest temperature at which c-axis-oriented YBCO films (1-3 microm thick) are comfortably grown. It is also well known that the non-c-axis oriented YBCO platelets are extremely detrimental to the values of J c such that their effects on J c dwarf essentially all of other microstructural effects which control J c . Hence, the discussion given below is mainly focused on how to avoid the growth of these crystallites

Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

Directory of Open Access Journals (Sweden)

Shridhar N. Mathad

2016-03-01

Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

The effect of NO2 on spectroscopic and structural properties of evaporated ruthenium phthalocyanine dimer

International Nuclear Information System (INIS)

Alagna, Lucilla; Capobianchi, Aldo; Paoletti, Anna Maria; Pennesi, Giovanna; Rossi, Gentilina; Casaletto, Maria Pia; Generosi, Amanda; Paci, Barbara; Albertini, Valerio Rossi

2006-01-01

The chemical interaction between NO 2 gas and dimeric ruthenium phthalocyanine (RuPc) 2 (Pc = phthalocyanine ligand) films has been investigated by different techniques: UV-Visible spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and Extended X-ray Absorption Fine Structure (EXAFS). The optical spectra in the Q band region (700-500 nm) registered 'in situ' enabled to follow the evolution of the process in real time indicating that a two steps reaction, showing two clear isosbestic points, occurs. The first phase was essentially characterised by: (a) the rapid disappearance of the 608 and 420 nm shoulders; (b) the intensity decrease of the main absorption peak and (c) the appearance of a new adsorption band centred around 510 nm. In the second step the remarkable feature is a further lowering of the main peak with the simultaneous decrease of the new 510 nm absorption. These spectral changes suggested that a chemical reaction occurred between NO 2 and ruthenium phthalocyanine with the formation of a radical species due to the macrocycle oxidation. The kinetics indicates that the adsorption of gas by the evaporated (RuPc) 2 film is a complex process involving more than one independent mechanism. XPS and EXAFS spectra collected before and after gas exposure showed that the central metals (Ru) were also involved in the oxidation process. The reversibility of the process has been also tested by treating the films at different temperatures, the original optical spectrum being not completely recovered

Studies on Gas Sensing Performance of Pure and Surface Chrominated Indium Oxide Thick Film Resistors

Directory of Open Access Journals (Sweden)

D. N. CHAVAN

2010-12-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CrO3 for different intervals of time. The surface chrominated (20 min In2O3 thick film showed maximum response to H2S gas (40 ppm than pure In2O3 thick film at 250 oC. Chromium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the sensor indicates the key role played by chromium oxide on the surface of thick film. The selectivity, gas response and recovery time of the sensor were measured and presented.

Unexpected Rotamerism at the Origin of a Chessboard Supramolecular Assembly of Ruthenium Phthalocyanine.

Science.gov (United States)

Mattioli, Giuseppe; Larciprete, Rosanna; Alippi, Paola; Bonapasta, Aldo Amore; Filippone, Francesco; Lacovig, Paolo; Lizzit, Silvano; Paoletti, Anna Maria; Pennesi, Giovanna; Ronci, Fabio; Zanotti, Gloria; Colonna, Stefano

2017-11-16

We have investigated the formation and the properties of ultrathin films of ruthenium phthalocyanine (RuPc) 2 vacuum deposited on graphite by scanning tunneling microscopy and synchrotron photoemission spectroscopy measurements, interpreted in close conjunction with ab initio simulations. Thanks to its unique dimeric structure connected by a direct Ru-Ru bond, (RuPc) 2 can be found in two stable rotameric forms separated by a low-energy barrier. Such isomerism leads to a peculiar organization of the molecules in flat, horizontal layers on the graphite surface, characterized by a chessboard-like alternation of the two rotamers. Moreover, the molecules are vertically connected to form π-stacked columnar pillars of akin rotamers, compatible with the high conductivity measured in (RuPc) 2 powders. Such features yield an unprecedented supramolecular assembly of phthalocyanine films, which could open interesting perspectives toward the realization of new architectures of organic electronic devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Energy transfer and electron transfer in dimers and polymers of porphyrin and phthalocyanines: from the liquid phase to Langmuir-Blodgett films

International Nuclear Information System (INIS)

Lipskier, Jean-Francois

1991-01-01

The understanding of phenomena of photo-induced transfer of energy and of electron between chromophores belonging to a same supra-molecular entity is necessary for the design and fabrication of molecule devices performing the conversion of a light signal into electric signal or chemical potential. As porphyrin oligomers and phthalocyanine oligomers are examples of interest for the systematic study of parameters governing these processes, the first part of this research thesis addresses the study of dimers and trimers bound by covalent bridges. The second part addresses the study of physical-chemical properties of complexes bound by the Van der Waals interaction as well as by the Coulomb attraction. An extension to Langmuir-Blodgett films is proposed, and the properties of complexes organised in thin films according to this methodology are compared with those of their homologues in solution [fr

Attempt to produce both thick and thinned flowing superfluid films

International Nuclear Information System (INIS)

Kwoh, D.S.W.; Goodstein, D.L.

1977-01-01

As discussed in the preceding paper by Graham, a controversy has arisen over conflicting reports of whether a superfluid film becomes thinned when it is set into motion. We have performed an experiment designed to reproduce as nearly as possible two previous measurements giving opposite results. Our experiment is also designed to test directly a theory proposed by Goodstein and Saffman which would have reconciled the apparently contradictory observations. We are unable to reproduce the thick-film result, finding kinetic thinning in all cases, even where the Goodstein--Saffman theory would lead us to expect a thick film. We conclude, in agreement with Graham, that the film is always thinned when it flows, and that the theory is therefore unnecessary

Laser Cutting of Thick Diamond Films Using Low-Power Laser

Energy Technology Data Exchange (ETDEWEB)

Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

2000-02-01

Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

International Nuclear Information System (INIS)

Lu, Renguo; Zhang, Hedong; Komada, Suguru; Mitsuya, Yasunaga; Fukuzawa, Kenji; Itoh, Shintaro

2014-01-01

Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

Effect of Temperature on Film Thickness of Two Types of Commonly used Luting Cements.

Science.gov (United States)

Kumar, M Praveen; Priyadarshini, Reddy; Kumar, Yasangi M; Priya, K Shanthi; Chunchuvyshnavi, Chunchuvyshnavi; Yerrapragada, Harika

2017-12-01

The aim of this study is to evaluate the effect of temperature change on film thickness of both types of cements. Totally, 60 samples were prepared with 10 in each subgroup, thus comprising 30 in each group. Materials tested were glass ionomer cement (GIC) type I and zinc phosphate type I. Samples were manipulated with manufacturer's instructions and tested according to American Dental Association (ADA) guidelines. The mean values of film thickness were recorded for both groups I and II. In intragroup comparison of group 1, subgroup III (26.560 ± 0.489 urn) was found to have the highest film thickness followed by subgroup II (24.182 ± 0.576 urn) and the lowest in subgroup I (20.209 ± 0.493 urn). In intragroup comparison of group II, the film thickness recorded in subgroup III (25.215 ± 0.661 urn) was the highest followed by subgroup II (21.471 ± 0.771 urn) and the least in subgroup I (17.951 ± 0.654 urn; p film thickness than group I (23.650 ± 0.271). The results were found to be statistically significant (p film thickness. Zinc phosphate has less film thickness than GIC. Zinc phosphate should be preferred over GIC in clinical practice, and more stress should be given in mechanical preparation of crowns for better retentive quality of prosthesis.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

Science.gov (United States)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

Science.gov (United States)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

Influence of iodine on the electrical and photoelectrical properties of zinc phthalocyanine thin film devices

Energy Technology Data Exchange (ETDEWEB)

Sharma, G.D. [Jodhpur Univ. (India). Dept. of Physics; Sangodkar, S.G. [Jodhpur Univ. (India). Dept. of Physics; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur (Raj.) (India)

1996-11-01

The electrical and photovoltaic properties of the zinc phthalocyanine (ZnPc) and I{sub 2} doped ZnPc thin films, sandwiched between indium tin oxide (ITO) and Al electrodes, were investigated. Doping with iodine brings adequate changes in the characteristics of the device. The devices constitute a metal-insulator-semiconductor (MIS) structure, in which depletion layer is formed in ZnPc, near Al-Al{sub 2}O{sub 3}/ZnPc. The depletion layer width and potential barrier height decrease with I{sub 2} doping. The charge transport phenomenon at higher voltage range appears to be space charge limited conduction (SCLC), in the presence of the discrete trapping level. The position of Fermi level shifts toward the valence band edge, which indicates that I{sub 2} doping increases the P-type conductivity. Various electrical and photovoltaic parameters were determined from the J-V and C-V analysis. The influence of the I{sub 2} doping has been discussed in detail. (orig.)

Thick film heater for sensor application

International Nuclear Information System (INIS)

Milewski, J; Borecki, M; Kalenik, J; Król, K

2014-01-01

A thick film microheater was elaborated. The microheater is intended for fast heating of small volume samples under measurement in optical based system. Thermal analysis of microheater was carried out using finite element method (FEM) for heat transfer calculation as a function of time and space. A nodal heat transfer function was calculated in classical form including all basics mechanisms of heat exchange – heat conduction, convection and radiation were considered. Work focuses on the influence of some construction parameters (ex. length, thermal conductivity of substrate, substrate thickness) on microheater performance. The results show that application of thin substrate of low thermal conductivity and low thickness for miroheater construction and resistor of optimum dimensions leads to significant power consumption decrease and increase of overall optical measurement system performance.

Screen printed nanosized ZnO thick film

Indian Academy of Sciences (India)

Unknown

The ex- tracted powder was screen printed on glass substrates using ethyl cellulose as binder and turpinol as solvent. ... racterized and a thick film paste is prepared by adding suitable .... UV peak and a broad green emission which is usually.

Multifunctional thick-film structures based on spinel ceramics for environment sensors

International Nuclear Information System (INIS)

Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O; Brunner, M

2011-01-01

Temperature sensitive thick films based on spinel-type NiMn 2 O 4 -CuMn 2 O 4 -MnCo 2 O 4 manganites with p- and p + -types of electrical conductivity and their multilayer p + -p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p + -conductive films. Some part of the p + -p structures were of high stability, the relative electrical drift being no more than 1 %.

A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature.

Science.gov (United States)

Chung, Jun Young; Douglas, Jack F; Stafford, Christopher M

2017-10-21

We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition T g by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and T g (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below T g , indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature-both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

Residual stress analysis in thick uranium films

International Nuclear Information System (INIS)

Hodge, A.M.; Foreman, R.J.; Gallegos, G.F.

2005-01-01

Residual stress analysis was performed on thick, 1-25 μm, depleted uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolution was studied as a function of coating thickness and applied negative bias voltage (0, -200, -300 V). The stresses developed were always compressive; however, increasing the coating thickness and applying a bias voltage presented a trend towards more tensile stresses and thus an overall reduction of residual stresses

The film thickness dependent thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers

Energy Technology Data Exchange (ETDEWEB)

Xiao Xiudi; Xu Gang, E-mail: xiudixiao@163.com; Xiong Bin; Chen Deming; Miao Lei [Chinese Academy of Sciences, Key Laboratory of Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion (China)

2012-03-15

The monolayer Al{sub 2}O{sub 3}:Ag thin films were prepared by magnetron sputtering. The microstructure and optical properties of thin film after annealing at 700 Degree-Sign C in air were characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometer. It revealed that the particle shape, size, and distribution across the film were greatly changed before and after annealing. The surface plasmon resonance absorption and thermal stability of the film were found to be strongly dependent on the film thickness, which was believed to be associated with the evolution process of particle diffusion, agglomeration, and evaporation during annealing at high temperature. When the film thickness was smaller than 90 nm, the film SPR absorption can be attenuated until extinct with increasing annealing time due to the evaporation of Ag particles. While the film thickness was larger than 120 nm, the absorption can keep constant even after annealing for 64 h due to the agglomeration of Ag particles. On the base of film thickness results, the multilayer Al{sub 2}O{sub 3}:Ag solar selective thin films were prepared and the thermal stability test illustrated that the solar selectivity of multilayer films with absorbing layer thickness larger than 120 nm did not degrade after annealing at 500 Degree-Sign C for 70 h in air. It can be concluded that film thickness is an important factor to control the thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers.

Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

International Nuclear Information System (INIS)

Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

2017-01-01

Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

Thickness-Dependent Surfactant Behavior in Trilayer Polymer Films

Science.gov (United States)

Sun, Yan; Shull, Kenneth; Wang, Jin

2010-03-01

The ability for thin liquid films to wet and remain thermodynamically stable on top of one another is a fundamental challenge in developing high quality paints, coatings, adhesives, and other industrial products. Since intermolecular interactions and interfacial energies dominate in the film thickness regime from tens to hundreds of nanometers, it is desirable to tune these long-range and short-range forces in a simple, controllable manner. Starting from an unstable model homopolymer bilayer (poly(styrene)/poly(4-vinylpyridine)), we demonstrate that sandwiching an additional homopolymer layer (poly(4-bromostyrene)) between the two layers can provide needed surfactancy. As the thickness of this center layer is increased, the full trilayer transitions from unstable (thin) to stable (moderate) to unstable (thick). We experimentally show using x-ray standing waves generated via total external reflection (TER-XSW), atomic force microscopy (AFM), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) that this behavior can be directly attributed to the autophobic dewetting phenomenon, in which the surfactant layer is thin enough to remain stable but thick enough to shield the neighboring layers, highlighting a general approach to stabilizing multilayer systems.

Kinetics of sub-spinodal dewetting of thin films of thickness dependent viscosity.

Science.gov (United States)

Kotni, Tirumala Rao; Khanna, Rajesh; Sarkar, Jayati

2017-05-04

An alternative explanation of the time varying and very low growth exponents in dewetting of polymer films like polystyrene films is presented based on non-linear simulations. The kinetics of these films is explored within the framework of experimentally observed thickness dependent viscosity. These films exhibit sub-spinodal dewetting via formation of satellite holes in between primary dewetted holes under favorable conditions of excess intermolecular forces and film thicknesses. We find that conditions responsible for sub-spinodal dewetting concurrently lead to remarkable changes in the kinetics of dewetting of even primary holes. For example, the radius of the hole grows in time with a power-law growth exponent sequence of [Formula: see text], in contrast to the usual  ∼4/5. This is due to the cumulative effect of reduced rim mobility due to thickness dependent viscosity and hindrance created by satellite holes.

Ceramic thick film humidity sensor based on MgTiO3 + LiF

International Nuclear Information System (INIS)

Kassas, Ahmad; Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand; Lakiss, Hassan; Hamieh, Tayssir

2013-01-01

Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO 3 + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO 3 /LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time

Influence of Liquid Petroleum Gas on the Electrical Parameters of the WO3 Thick Film

Directory of Open Access Journals (Sweden)

R. S. KHADAYATE

2007-02-01

Full Text Available In this work, the WO3 thick films were prepared by standard screen-printing technology. These films were characterized by x-ray diffraction (XRD measurements and scanning electron microscopy (SEM. Influence of LPG on the electrical properties of the prepared WO3 thick film is reported. It was observed that the slope of the Arrhenius curves of the WO3 thick film decreased as the medium changed from pure air to 100 ppm LPG in air. From I-V characteristics, it was observed that the WO3 thick film exhibit highest sensitivity to 50 ppm LPG in air at 400oC.

A method for reducing the sloughing of thick blood films for malaria diagnosis.

Science.gov (United States)

Norgan, Andrew P; Arguello, Heather E; Sloan, Lynne M; Fernholz, Emily C; Pritt, Bobbi S

2013-07-08

The gold standard for malaria diagnosis is the examination of thick and thin blood films. Thick films contain 10 to 20 times more blood than thin films, correspondingly providing increased sensitivity for malaria screening. A potential complication of thick film preparations is sloughing of the blood droplet from the slide during staining or rinsing, resulting in the loss of sample. In this work, two methods for improving thick film slide adherence ('scratch' (SCM) and 'acetone dip' (ADM) methods) were compared to the 'standard method' (SM) of thick film preparation. Standardized blood droplets from 26 previously examined EDTA whole blood specimens (22 positive and four negative) were concurrently spread on glass slides using the SM, ADM, and SCM. For the SM and ADM prepared slides, the droplet was gently spread to an approximate 22 millimeters in diameter spot on the slide using the edge of a second glass slide. For the SCM, the droplet was spread by carefully grinding (or scratching) it into the slide with the point of a second glass slide. Slides were dried for one hour in a laminar flow hood. For the ADM, slides were dipped once in an acetone filled Coplin jar and allowed to air dry. All slides were then Giemsa-stained and examined in a blinded manner. Adherence was assessed by blinded reviewers. No significant or severe defects were observed for slides prepared with the SCM. In contrast, 8 slides prepared by the ADM and 3 prepared using the SM displayed significant or severe defects. Thick films prepared by the three methods were microscopically indistinguishable and concordant results (positive or negative) were obtained for the three methods. Estimated parasitaemia of the blood samples ranged from 25 to 429,169 parasites/μL of blood. The SCM is an inexpensive, rapid, and simple method that improves the adherence of thick blood films to standard glass slides without altering general slide preparation, microscopic appearance or interpretability. Using the SCM

Molecular mechanics calculations on cobalt phthalocyanine dimers

NARCIS (Netherlands)

Heuts, J.P.A.; Schipper, E.T.W.M.; Piet, P.; German, A.L.

1995-01-01

In order to obtain insight into the structure of cobalt phthalocyanine dimers, molecular mechanics calculations were performed on dimeric cobalt phthalocyanine species. Molecular mechanics calculations are first presented on monomeric cobalt(II) phthalocyanine. Using the Tripos force field for the

Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

Science.gov (United States)

Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

2018-05-01

A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

Characterization and comparison of thermistor thick films. Topical report

International Nuclear Information System (INIS)

Gehman, R.W.

1981-09-01

Four thermistor thick film inks were evaluated for HMC production use. The physical, chemical and electrical properties of the wet inks and fired films were measured. Variations in the physical and chemical properties of the inks were used to explain variations in thermistor electrical resistance and temperature coefficient of resistance

Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

Science.gov (United States)

Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

2016-05-01

Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

Thickness control in electrophoretic deposition of WO{sub 3} nanofiber thin films for solar water splitting

Energy Technology Data Exchange (ETDEWEB)

Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F. [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom); Bedi, Jasbir S. [School of Public Health & Zoonoses, Guru Angad Dev Veterinary and Animal Sciences University, Ludhiana 141004 Punjab (India); Perry, Christopher C. [Division of Biochemistry, School of Medicine, Loma Linda University, Loma Linda, CA 92350 (United States); Chen, Qiao, E-mail: qiao.chen@sussex.ac.uk [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom)

2015-12-15

Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO{sub 3} nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO{sub 3} nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

Multifunctional thick-film structures based on spinel ceramics for environment sensors

Energy Technology Data Exchange (ETDEWEB)

Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Brunner, M, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Fachhochschule Koeln/University of Applied Sciences, 2 Betzdorfer str., Koeln, 50679 (Germany)

2011-04-01

Temperature sensitive thick films based on spinel-type NiMn{sub 2}O{sub 4}-CuMn{sub 2}O{sub 4}-MnCo{sub 2}O{sub 4} manganites with p- and p{sup +}-types of electrical conductivity and their multilayer p{sup +}-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p{sup +}-conductive films. Some part of the p{sup +}-p structures were of high stability, the relative electrical drift being no more than 1 %.

Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Pryds, N. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark)]. E-mail: nini.pryds@risoe.dk; Toftmann, B. [Department of Optics and Plasma Research, Riso National Laboratory, DK-4000 Roskilde (Denmark); Bilde-Sorensen, J.B. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark); Schou, J. [Department of Optics and Plasma Research, Riso National Laboratory, DK-4000 Roskilde (Denmark); Linderoth, S. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark)

2006-04-30

Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced.

Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

International Nuclear Information System (INIS)

Pryds, N.; Toftmann, B.; Bilde-Sorensen, J.B.; Schou, J.; Linderoth, S.

2006-01-01

Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced

Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

Science.gov (United States)

Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

2010-10-01

This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

Directory of Open Access Journals (Sweden)

Cheng-Chang Yu

2014-01-01

Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

Comparison of functional parameters of CsI:Tl crystals and thick films

International Nuclear Information System (INIS)

Fedorov, A.; Gektin, A.; Lebedynskiy, A.; Mateychenko, P.; Shkoropatenko, A.

2013-01-01

500 mkm thick CsI:Tl columnar films can be produced using thermal evaporation in vacuum by sublimation of the same bulk crystal. Comparison of afterglow and radiation stability of deposited CsI:Tl films with source crystal was the aim of current work. It is shown that the afterglow in the films is always below its level in initial single crystal. It was ascertained that the annealing atmospheres influence the processes leading to the activator depletion of the films during the thermal processing. -- Highlights: ► Thick CsI:Tl columnar films were obtained by thermal evaporation in vacuum. ► Radiation stability of such CsI:Tl films appears to be better than that of crystal. ► CsI:Tl film parameters can be modified by annealing in different atmospheres

Thickness and microstructure effects in the optical and electrical properties of silver thin films

Energy Technology Data Exchange (ETDEWEB)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

2015-11-15

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

Structural, magnetic and transport properties of Co2FeAl Heusler films with varying thickness

International Nuclear Information System (INIS)

Wang, Xiaotian; Li, Yueqing; Du, Yin; Dai, Xuefang; Liu, Guodong; Liu, Enke; Liu, Zhongyuan; Wang, Wenhong; Wu, Guangheng

2014-01-01

We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co 2 FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states. - Highlights: ●Highly ordered CFA films with various thicknesses were prepared on MgO substrates. ●The magnon scattering contributions to the longitudinal resistivity in the CFA films. ●The anomalous Hall resistivity of the CFA films shows weakly temperature dependent. ●The CFA films show weak temperature dependent of tunneling spin-polarization

Thickness-Dependent Order-to-Order Transitions of Bolaform-like Giant Surfactant in Thin Films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Chih-Hao; Yue, Kan; Wang, Jing; Dong, Xue-Hui; Xia, Yanfeng; Jiang, Zhang [X-ray; Thomas, Edwin L. [Department; Cheng, Stephen Z. D.

2017-09-07

Controlling self-assembled nanostructures in thin films allows the bottom-up fabrication of ordered nanoscale patterns. Here we report the unique thickness-dependent phase behavior in thin films of a bolaform-like giant surfactant, which consists of butyl- and hydroxyl-functionalized polyhedral oligomeric silsesquioxane (BPOSS and DPOSS) cages telechelically located at the chain ends of a polystyrene (PS) chain with 28 repeating monomers on average. In the bulk, BPOSS-PS28-DPOSS forms a double gyroid (DG) phase. Both grazing incidence small angle X-ray scattering and transmission electron microscopy techniques are combined to elucidate the thin film structures. Interestingly, films with thicknesses thinner than 200 nm exhibit an irreversible phase transition from hexagonal perforated layer (HPL) to compressed hexagonally packed cylinders (c-HEX) at 130 °C, while films with thickness larger than 200 nm show an irreversible transition from HPL to DG at 200 °C. The thickness-controlled transition pathway suggests possibilities to obtain diverse patterns via thin film self-assembly.

Critical current density and microstructure of YBa2Cu3O7-x films as a function of film thickness

International Nuclear Information System (INIS)

Mogro-Campero, A.; Turner, L.G.; Hall, E.L.; Lewis, N.

1990-01-01

Thin films of nominal composition YBa 2 Cu 3 O 7-x (YBCO) were produced on (100) SrTiO 3 substrates by coevaporation and furnace annealing. Film thicknesses in the range of 0.2 to 2.4 μm were analyzed. Microstructural investigations by cross sectional transmission electron microscopy (TEM) reveal a continuous layer of about 0.4 μm thickness adjacent to the substrate with c-axis normal to the substrate plane. In thicker films the remaining top portion has the c-axis in the film plane. The critical current density (J c ) at 77 K decreases with increasing thickness in the thickness range exceeding 0.4 μm, qualitatively consistent with the microstructural observation, but quantitatively inconsistent with a simple model based on the microstructural data

Synthesis and application of trifluoroethoxy-substituted phthalocyanines and subphthalocyanines

Directory of Open Access Journals (Sweden)

Satoru Mori

2017-10-01

Full Text Available Phthalocyanines and subphthalocyanines are attracting attention as functional dyes that are applicable to organic solar cells, photodynamic therapy, organic electronic devices, and other applications. However, phthalocyanines are generally difficult to handle due to their strong ability to aggregate, so this property must be controlled for further applications of phthalocyanines. On the other hand, trifluoroethoxy-substituted phthalocyanines are known to suppress aggregation due to repulsion of the trifluoroethoxy group. Furthermore, the electronic characteristics of phthalocyanines are significantly changed by the strong electronegativity of fluorine. Therefore, it is expected that trifluoroethoxy-substituted phthalocyanines can be applied to new industrial fields. This review summarizes the synthesis and application of trifluoroethoxy-substituted phthalocyanine and subphthalocyanine derivatives.

Effects of rework on adhesion of Pb-In soldered gold thick films

International Nuclear Information System (INIS)

Gehman, R.W.; Becka, G.A.; Losure, J.A.

1982-02-01

The feasibility of repeatedly reworking Pb-In soldered joints on gold thick films was evaluated. Nailhead adhesion tests on soldered thick films typically resulted in failure within the bulk solder (50 In-50 Pb). Average strengths increased with each rework, and the failure mode changed. An increase in metalization lift-off occurred with successive reworks. An investigation was initiated to determine why these changes occurred. Based on this work, the thick film adhesion to the substrate appeared to be lowered by indium reduction of cadmium oxide and by formation of a weak, brittle intermetallic compound, Au 9 In 4 . It was concluded that two solder reworks could be conducted without significant amounts of metallization lift-off during nailhead testing

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

Science.gov (United States)

Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

2016-09-15

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

Optical properties of zinc phthalocyanine thin films prepared by pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Bulíř, Jiří; Bensalah-Ledoux, A.; Guy, S.; Fitl, P.; Vrňata, M.; Lančok, Ján; Moine, B.

2014-01-01

Roč. 117, č. 1 (2014), 377-381 ISSN 0947-8396 R&D Projects: GA ČR(CZ) GAP108/11/1298 Grant - others:AVČR(CZ) M100101271 Institutional support: RVO:68378271 Keywords : optical properties * zinc phthalocyanine * laser deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

Influence of substrate and film thickness on polymer LIPSS formation

Energy Technology Data Exchange (ETDEWEB)

Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A. [Instituto de Estructura de la Materia (IEM-CSIC), Serrano 121, Madrid 28006 (Spain); Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano (IQFR-CSIC), Serrano 119, Madrid 28006 (Spain)

2017-02-01

Highlights: • The estimation of temperature upon pulse accumulation shows that a small positive offset is caused by each individual pulse. • Number of pulses needed for LIPSS formation in PS thin films depends on polymer thickness. • Thermal conductivity and diffusivity of supporting substrate influence the onset for LIPSS formation and their quality. • Quality of LIPSS is affected by the substrate optical properties. - Abstract: Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200–380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

In-situ study of pn-heterojunction interface states in organic thin film transistors

International Nuclear Information System (INIS)

Ye, Rongbin; Ohta, Koji; Baba, Mamoru

2014-01-01

In this paper, we have investigated the density of pn-heterojunction interface states by evaluating the threshold voltage shift with in-situ measurement of electrical characteristics of a sandwich fluorinated copper phthalocyanine/pentacene thin film transistor with various thicknesses of pentacene thin films. A threshold voltage (V T ) undergoes a significant shift from + 20.6 to + 0.53 V with increasing the thickness of pentacene. When the thickness of pentacene is more than a critical thickness of 15 nm, V T undergoes hardly any shift. On the other hand, the value of mobility is lightly decreased with increasing the thickness of pentacene due to the effect of the bulk current. Thus the V T shift is attributed to the increase of drain current in the sandwich device. In order to explain the V T shift, a model was assumed in the linear region of thin film transistor operation and the V T shift agrees with a tan −1 function of film thickness. The total charge density (Q 0 ) of 1.53 × 10 −7 C/cm 2 (9.56 × 10 11 electrons or holes/cm 2 ) was obtained. Furthermore, the V T shift and Q 0 could be adjusted by selecting a p-type semiconductor. - Highlights: • A threshold voltage was in-situ measured in an organic sandwich thin film transistor. • Density of pn-heterojunction interface states by evaluating the threshold voltage shift. • The threshold voltage shift attributes to the increase of drain current. • In order to explain the threshold voltage shift, a model was assumed

Electron beam curable polymer thick film

International Nuclear Information System (INIS)

Nagata, Hidetoshi; Kobayashi, Takashi

1988-01-01

Currently, most printed circuit boards are produced by the selective etching of copper clads laminated on dielectric substrates such as paper/phenolic resion or nonwoven glass/epoxy resin composites. After the etchig, various components such as transistors and capacitors are mounted on the boards by soldering. But these are troublesome works, therefore, as an alternative, printing method has been investigated recently. In the printing method, conductor circuits and resistors can be made by printing and curing of the specially prepared paste on dielectric substrates. In the near future, also capacitors are made by same method. Usually, conductor paste, resistor paste and dielectric paste are employed, and in this case, the printing is screen printing, and the curing is done thermally. In order to avoid heating and the deterioration of substrates, attention was paid to electron beam curing, and electron beam curable polymer thick film system was developed. The electron beam curable paste is the milled mixture of a filler and an electron beam curable binder of oligomer/monomer. The major advantage of electron beam curable polymer thick film, the typical data of a printed resistor of this type and its trial are reported. (K.I.)

Adsorption energy of iron-phthalocyanine on crystal surfaces

International Nuclear Information System (INIS)

Struzzi, C.; Scardamaglia, M.; Angelucci, M; Massimi, L.; Mariani, C.; Betti, G.

2013-01-01

The adsorption energy of iron-phthalocyanine (FePc) deposited on different crystal surfaces is studied by thermal desorption spectroscopy. A thin film of molecules has been absorbed on highly oriented pyrolytic graphite (HOPG), on graphene epitaxially grown on Ir(111), and on Au(110). Activation energies for the desorption of a molecular thin film and for the FePc single layer are determined at the three surfaces. The desorption temperature measured for the thin films is only slightly dependent on the substrate, since it is mostly dominated by molecule-molecule interactions. A definitely different desorption temperature is found at the single-layer coverage: we find an increasing desorption temperature going from HOPG, to graphene/Ir, to the Au(110) surface. The different adsorption energies of the first FePc layer in contact with the substrate surface are discussed taking into account the interaction and the growth morphology.

Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2011-03-15

Research highlights: {yields} Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. {yields} The graphitization of the films increased with increased film thickness. {yields} The wear resistance of the films increased though their adhesion strength decreased. {yields} The corrosion potentials of the films shifted to more negative values. {yields} However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC films was studied using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), micro-scratch test and ball-on-disc tribotest, respectively. It was found that the wear resistance of the PtRuN-DLC films apparently increased with increased film thickness though the adhesion strength of the films decreased. The corrosion results revealed that the increased concentration of sp{sup 2} bonds in the PtRuN-DLC films with increased film thickness shifted the corrosion potentials of the films to more negative values but the decreased porosity density in the films significantly decreased the corrosion currents of the films.

Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2011-01-01

Research highlights: → Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. → The graphitization of the films increased with increased film thickness. → The wear resistance of the films increased though their adhesion strength decreased. → The corrosion potentials of the films shifted to more negative values. → However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC films was studied using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), micro-scratch test and ball-on-disc tribotest, respectively. It was found that the wear resistance of the PtRuN-DLC films apparently increased with increased film thickness though the adhesion strength of the films decreased. The corrosion results revealed that the increased concentration of sp 2 bonds in the PtRuN-DLC films with increased film thickness shifted the corrosion potentials of the films to more negative values but the decreased porosity density in the films significantly decreased the corrosion currents of the films.

Effect of diffusion on percolation threshold in thick-film resistors

International Nuclear Information System (INIS)

Abdurakhmanov, G.

2009-01-01

Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

Thickness measurement of SiO2 films thinner than 1 nm by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Joong Kim, Kyung; Park, Ki Tae; Lee, Jong Wan

2006-01-01

The thickness measurement of ultra-thin SiO 2 films thinner than 1 nm was studied by X-ray photoelectron spectroscopy (XPS). Amorphous SiO 2 thin films were grown on amorphous Si films to avoid the thickness difference due to the crystalline structure of a substrate. SiO 2 thin films were grown by ion beam sputter deposition under oxygen gas flow and the thickness was measured by in situ XPS. The attenuation length was determined experimentally by a SiO 2 film with a known thickness. The straight line fit between the measured thickness using XPS and the nominal thickness showed a good linear relation with a gradient of 0.969 and a small offset of 0.126 nm. The gradient measured at the range of 3.4-0.28 nm was very close to that measured at sub-nanometer range of 1.13-0.28 nm. This result means that the reliable measurement of SiO 2 film thickness below 1 nm is possible by XPS

Film Thickness and Friction Relationship in Grease Lubricated Rough Contacts

Directory of Open Access Journals (Sweden)

David Gonçalves

2017-08-01

Full Text Available The relationship between the film generation and the coefficient of friction in grease lubricated contacts was investigated. Ball-on-disc tests were performed under different operating conditions: entrainment speed, lubricant temperature and surface roughness. The tests were performed with fully formulated greases and their base oils. The greases were formulated with different thickener types and also different base oils natures and viscosities. Film thickness measurements were performed in ball-on-glass disc tests, and Stribeck curves were measured in ball-on-steel disc tests with discs of different roughness. The role of the thickener and the base oil nature/viscosity on the film thickness and coefficient of friction was addressed and the greases’ performance was compared based on their formulation.

Graphene-enhanced intermolecular interaction at interface between copper- and cobalt-phthalocyanines

Energy Technology Data Exchange (ETDEWEB)

Dou, Wei-Dong [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Material Science, City University of Hong Kong, Hong Kong (China); Huang, Shu-Ping [Department of Chemistry, University of South Dakota, Vermillion, South Dakota 57069 (United States); Lee, Chun-Sing, E-mail: apcslee@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Material Science, City University of Hong Kong, Hong Kong (China)

2015-10-07

Interfacial electronic structures of copper-phthalocyanine (CuPc), cobalt-phthalocyanine (CoPc), and graphene were investigated experimentally by using photoelectron spectroscopy. While the CuPc/graphene interface shows flat band structure and negligible interfacial dipole indicating quite weak molecule-substrate interaction, the CuPc/CoPc/graphene interface shows a large interfacial dipole and obvious energy level bending. Controlled experiments ruled out possible influences from the change in film structure of CuPc and pure π–π interaction between CoPc and CuPc. Analysis based on X-ray photoelectron spectroscopy and density functional theory reveals that the decrease in the work function for the CuPc/CoPc/graphene system is induced by the intermolecular interaction between CuPc and CoPc which is enhanced owning to the peculiar electronic properties at the CoPc-graphene interface.

Thickness and roughness measurements of nano thin films by interference

Directory of Open Access Journals (Sweden)

A Sabzalipour

2011-06-01

Full Text Available In the standard optical interference fringes approach, by measuring shift of the interference fringes due to step edge of thin film on substrate, thickness of the layer has already been measured. In order to improve the measurement precision of this popular method, the interference fringes intensity curve was extracted and analyzed before and after the step preparation. By this method, one can measure a few nanometers films thickness. In addition, using the interference fringes intensity curve and its fluctuations, the roughness of surface is measured within a few nanometers accuracy. Comparison of our results with some direct methods of thickness and roughness measurements, i.e. using surface profilemeter and atomic force microscopy confirms the accuracy of the suggested improvements.

Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

Energy Technology Data Exchange (ETDEWEB)

Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa [Korea Atomic Energy Research Institute, Jeongeup (Korea, Republic of); Kim, Jong Il [Chonbuk National University, Jeonju (Korea, Republic of)

2010-06-15

To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 {mu}m) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film.

Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

International Nuclear Information System (INIS)

Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa; Kim, Jong Il

2010-01-01

To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 μm) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film

Sputtering of Thick Deuterium Films by KeV Electrons

DEFF Research Database (Denmark)

Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

1994-01-01

Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

International Nuclear Information System (INIS)

Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

2008-01-01

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

Thickness and microstructure effects in the optical and electrical properties of silver thin films

Directory of Open Access Journals (Sweden)

Guowen Ding

2015-11-01

Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

International Nuclear Information System (INIS)

Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang

2015-01-01

In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra

Study on Gas Sensing Performance of TiO2 Screen Printed Thick Films

Directory of Open Access Journals (Sweden)

C. G. DIGHAVKAR

2009-02-01

Full Text Available Titanium dioxide (TiO2 thick films were prepared on alumina substrate by using screen printing technique. After preparation, the films were fired at temperature range 600 -1000 ºC for two hour. Morphological, compositional and structural properties of the film samples were performed by means of several techniques, including scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDS, X-ray diffraction techniques. We explore the various gases to study the sensing performance of the TiO2 thick films. The maximum response was reported to film fired at 800 0C for LPG gas at 350 0C operating temperature.

Electrochemistry and spectroelectrochemistry of tert-butylcalix[4]arene bridged bis double-decker lutetium(III) phthalocyanine, Lu{sub 2}Pc{sub 4} and dimeric lutetium(III) phthalocyanine, Lu{sub 2}Pc{sub 2}(OAc){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Koca, Atif [Chemical Engineering Department, Engineering Faculty, Marmara University, TR34722 Goeztepe, Istanbul (Turkey); Ceyhan, Tanju; Erbil, Mehmet K. [Department of Biochemistry, Division of Organic Chemistry, Guelhane Medical Academy (GATA), Ankara (Turkey); Ozkaya, Ali Riza [Department of Chemistry, Marmara University, TR34722 Goeztepe, Istanbul (Turkey)], E-mail: aliozkaya@marmara.edu.tr; Bekaroglu, Ozer [Department of Chemistry, Technical University of Istanbul, TR34469 Maslak, Istanbul (Turkey)], E-mail: obek@itu.edu.tr

2007-11-09

In this study, electrochemical, electrochromic and spectroelectrochemical properties of a tert-butylcalix[4]arene bridged bis double-decker lutetium(III) phthalocyanine (Lu{sub 2}Pc{sub 4}2) were investigated explicitly as compared with a tert-butylcalix[4]arene bridged dimeric lutetium(III) phthalocyanine [Lu{sub 2}Pc{sub 2}(OAc){sub 2}1]. Distinctive differences between electrochemical and electrochromic properties of 1 and 2 were detected. Moreover, the properties of 1 and 2 were compared with previously reported S{sub 4}(CH{sub 2}){sub 4} bridged Lu{sub 2}Pc{sub 2}(OAc){sub 2} and Lu{sub 2}Pc{sub 4}. The calixarene bridged phthalocyanine (Pc) compounds, 1 and 2 showed well-defined electrochromic behaviour with green-blue and blue-purple colour transitions. The enhanced electrochromic properties of 2, as compared to 1, were attributed to its double-decker structure, probably allowing the formation of suitable ion channels for the counter ion movement in the solid film.

Fabrication of field-effect transistor utilizing oriented thin film of octahexyl-substituted phthalocyanine and its electrical anisotropy based on columnar structure

Science.gov (United States)

Ohmori, Masashi; Nakatani, Mitsuhiro; Kajii, Hirotake; Miyamoto, Ayano; Yoneya, Makoto; Fujii, Akihiko; Ozaki, Masanori

2018-03-01

Field-effect transistors with molecularly oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which characteristically form a columnar structure, have been fabricated, and the electrical anisotropy of C6PcH2 has been investigated. The molecularly oriented thin films of C6PcH2 were prepared by the bar-coating technique, and the uniform orientation in a large area and the surface roughness at a molecular level were observed by polarized spectroscopy and atomic force microscopy, respectively. The field effect mobilities parallel and perpendicular to the column axis of C6PcH2 were estimated to be (1.54 ± 0.24) × 10-2 and (2.10 ± 0.23) × 10-3 cm2 V-1 s-1, respectively. The electrical anisotropy based on the columnar structure has been discussed by taking the simulated results obtained by density functional theory calculation into consideration.

Texture change through film thickness and off-axis accommodation of (0 0 2) planes

International Nuclear Information System (INIS)

Shetty, A.R.; Karimi, A.

2011-01-01

We present our recent experimental results on the formation of off-axis texture and crystallographic tilting of crystallites that take place in thin film of transition metal nitrides. For this purpose, the microstructural development of TiAlN film was studied, specially the change in texture with film thickness. Fiber texture was measured using θ-2θ and pole figure X-ray diffraction (XRD), while scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to observe the microstructure and changes in texture with thickness. The sin 2 ψ method was applied to determine the stresses on (1 1 1) and (0 0 2) plane. With deposition parameters chosen, the growth texture mechanism is discussed in three different stages of film growth. Surface energy minimization at low thickness leads to the development of (0 0 2) orientation. On the other hand, the competitive growth promotes the growth of (1 1 1) planes parallel to film surface at higher thickness. However, contrary to the prediction of growth models, the (0 0 2) grains are not completely overlapped by (1 1 1) grains at higher thickness. Rather the (0 0 2) grains still constitute the surface, but are tilted away from the substrate normal showing substantial in-plane alignment to allow the (1 1 1) planes remain parallel to film surface. Intrinsic stress along (1 1 1) and (0 0 2) shows a strong dependence with preferred orientation. The stress level in (0 0 2) grains which was compressive at low thickness changes to tensile at higher thickness. This change in the nature of stress allows the (0 0 2) planes to tilt away in order to promote the growth of 〈1 1 1〉 parallel to film normal and to minimize the overall energy of system due to high compressive stress stored in the (1 1 1) grains. The change in surface morphology with thickness was observed using SEM. An increase in surface roughness with film thickness was observed which indicates the development of (1 1 1) texture parallel to film

Microscopic image processing system for measuring nonuniform film thickness profiles: Image scanning ellipsometry

International Nuclear Information System (INIS)

Liu, A.H.; Plawsky, J.L.; Wayner, P.C. Jr.

1993-01-01

The long-term objective of this research program is to determine the stability and heat transfer characteristics of evaporating thin films. The current objective is to develop and use a microscopic image-processing system (IPS) which has two parts: an image analyzing interferometer (IAI) and an image scanning ellipsometer (ISE). The primary purpose of this paper is to present the basic concept of ISE, which is a novel technique to measure the two dimensional thickness profile of a non-uniform, thin film, from several nm up to several μm, in a steady state as well as in a transient state. It is a full-field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. The ISE was tested by measuring the thickness profile and the refractive index of a nonuniform solid film

Low-temperature technique for thick film resist stabilization and curing

Science.gov (United States)

Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

1999-06-01

For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Directory of Open Access Journals (Sweden)

Mia Nasrul Haque

2017-10-01

Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

International Nuclear Information System (INIS)

Prakash, Deo; Shaaban, E.R.; Shapaan, M.; Mohamed, S.H.; Othman, A.A.; Verma, K.D.

2016-01-01

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

Energy Technology Data Exchange (ETDEWEB)

Prakash, Deo [School of Computer Science & Engineering, Faculty of Engineering, SMVD University, Kakryal, Katra 182320, J& K (India); Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Mohamed, S.H. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Othman, A.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Verma, K.D., E-mail: kdverma1215868@gmail.com [Material Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, U.P. (India)

2016-08-15

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

Orientation and magnetic properties of the thick multilayered [NdFeBxTby]n films

International Nuclear Information System (INIS)

Liu, Weifang; Suzuki, Shunji; Machida, Kenichi

2007-01-01

Multilayered [NdFeB x /Tb y ] n films were prepared by a three-demensional sputtering system. From the thickness of NdFeB layer dependence on the orientation and magnetic properties of multilayered [NdFeB (xμm)/Tb (50nm)] n films with 7.2μm as a total thickness of NdFeB layers, it was found that the orientation of NdFeB grains was maintained. However, the coercivity was enhanced with decreasing the thickness of each NdFeB thin layer. The (BH) max value of 240kJ/m 3 was obtained on the layered [NdFeB (1.2μm)/Tb (50 nm)] 6 film as an optimal value. For the multilayered [NdFeB (1.2μm)/Tb (50 nm)] n films with various multiple layer sets (n), the coercivity value increased with the film thickness without any deterioration of the c-axis texture and consequently, multilayered NdFeB/Tb film magnets with total thickness values around 70μm showed the superior magnetic properties (H cj approx. = 1360kA/m, I r approx.= 1.05T, and (BH) max approx.= 202kJ/m 3 ). (author)

Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

CERN Document Server

Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

2002-01-01

The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

Ceramic thick film humidity sensor based on MgTiO{sub 3} + LiF

Energy Technology Data Exchange (ETDEWEB)

Kassas, Ahmad, E-mail: a.kassas.mcema@ul.edu.lb [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand [Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Lakiss, Hassan [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Faculty of Engineering, Section III, Hariri Campus, Hadath, Beirut (Lebanon); Hamieh, Tayssir [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon)

2013-10-15

Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO{sub 3} + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO{sub 3}/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time.

Tape casting and partial melting of Bi-2212 thick films

Energy Technology Data Exchange (ETDEWEB)

Buhl, D.; Lang, T.; Heeb, B. [Nichtmetallische Werkstoffe, Zuerich (Switzerland)] [and others

1994-12-31

To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density of 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

Direct observation of hindered eccentric rotation of an individual molecule : Cu-phthalocyanine on C60

NARCIS (Netherlands)

Stöhr, Meike; Wagner, T; Gabriel, M; Weyers, B; Moller, R

2002-01-01

Individual Cu-phthalocyanine molecules have been investigated by scanning tunnel microscopy on a closed packed film of C-60 at various temperatures. The molecules are found to bind asymmetrically to one C-60. While they remain in one position at low temperature, they can hop between six equivalent

Relation between film thickness and surface doping of MoS2 based field effect transistors

Science.gov (United States)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

Directory of Open Access Journals (Sweden)

A. V. PATIL

2010-12-01

Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

Structural, magnetic and transport properties of Co{sub 2}FeAl Heusler films with varying thickness

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaotian [School of Material Sciences and Engineering, Hebei University Technology, Tianjin 300130 (China); Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, Yueqing [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004 (China); Du, Yin [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Dai, Xuefang; Liu, Guodong [School of Material Sciences and Engineering, Hebei University Technology, Tianjin 300130 (China); Liu, Enke [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Liu, Zhongyuan [State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004 (China); Wang, Wenhong, E-mail: wenhong.wang@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wu, Guangheng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-08-01

We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co{sub 2}FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states. - Highlights: ●Highly ordered CFA films with various thicknesses were prepared on MgO substrates. ●The magnon scattering contributions to the longitudinal resistivity in the CFA films. ●The anomalous Hall resistivity of the CFA films shows weakly temperature dependent. ●The CFA films show weak temperature dependent of tunneling spin-polarization.

Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0 0 0 1)

International Nuclear Information System (INIS)

Xu Gang; Jin Ping; Tazawa, Masato; Yoshimura, Kazuki

2005-01-01

Vanadium dioxide (VO 2 ) films were epitaxially grown on α-Al 2 O 3 (0 0 0 1) by rf reactive magnetron sputtering. The effects of film thickness ranging from 3 to 150 nm on optical properties were investigated. It revealed that the semiconductor--metal phase transition temperature considerably decreases as film thickness decreases, in particular for the film with thickness less than 10 nm. On the other hand, we found that the difference in visible transmittance between the two phases of VO 2 also varies with film thickness. For the films with thickness less than 50 nm, the semiconductor phase exhibits lower visible transmittance than its metallic phase, while for those with thickness larger than 50 nm the situation is reversed

Quantum transition and decoherence of levitating polaron on helium film thickness under an electromagnetic field

Science.gov (United States)

Kenfack, S. C.; Fotue, A. J.; Fobasso, M. F. C.; Djomou, J.-R. D.; Tiotsop, M.; Ngouana, K. S. L.; Fai, L. C.

2017-12-01

We have studied the transition probability and decoherence time of levitating polaron in helium film thickness. By using a variational method of Pekar type, the ground and the first excited states of polaron are calculated above the liquid-helium film placed on the polar substrate. It is shown that the polaron transits from the ground to the excited state in the presence of an external electromagnetic field in the plane. We have seen that, in the helium film, the effects of the magnetic and electric fields on the polaron are opposite. It is also shown that the energy, transition probability and decoherence time of the polaron depend sensitively on the helium film thickness. We found that decoherence time decreases as a function of increasing electron-phonon coupling strength and the helium film thickness. It is seen that the film thickness can be considered as a new confinement in our system and can be adjusted in order to reduce decoherence.

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Directory of Open Access Journals (Sweden)

Glenda Biasotto

2011-03-01

Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

Thickness dependence of electrical properties in (0 0 1) oriented lead zirconate titanate films by laser ablation

International Nuclear Information System (INIS)

Zhu, T.J.; Lu, L.; Lai, M.O.; Soh, A.K.

2007-01-01

Highly (0 0 1)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with LaNiO 3 (LNO) bottom electrodes have been fabricated on amorphous TiN buffered Si substrates by pulsed laser deposition. The polarization-electric field (P-E) hysteresis of the deposited PZT films with different thickness ranging from 25 to 850 nm was measured. Results showed that the coercive field increases with the film thickness scaling down. No P-E loops could be obtained for the film of thickness of 25 nm. The deterioration of ferroelectric property in the thinnest film was attributed to extrinsic effect other than intrinsic size effect. Current-voltage (I-V) characteristics measurement showed the increase in leakage current of the PZT films with the decrease in the thickness of the films under the same bias voltage. At a high field regime, the leakage current of the PZT films of 25 nm thickness remained unchanged with increasing applied voltage. A totally depleted back-to-back Shottky barrier model was used to explain the effect of electrode interfaces on leakage current in the PZT films. It is believed that ferroelectric/electrode interfaces play an important role in the electrical properties of ferroelectric thin films with thickness at nanometer level

Thickness dependence of magnetization reversal mechanism in perpendicularly magnetized L1{sub 0} FePt films

Energy Technology Data Exchange (ETDEWEB)

Bi, Mei; Wang, Xin, E-mail: xinwang@uestc.edu.cn; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Xie, Jianliang

2017-04-15

We have studied the magnetic switching behavior of L1{sub 0}-ordered FePt films with varying thickness. It was found that coercivity is strongly dependent on the film thickness. The obvious variations of the coercivity in the thin films are confirmed by the measurements of structural and magnetic properties. With increasing thickness, the degree of L1{sub 0} chemical ordering increased, while the magnetization reversal process transforms from a pinned two-steps magnetization reversal to a comparatively smooth domain wall motion behavior. Although considering anisotropy, exchange interaction and applied magnetic field, the switching behavior in films is quite complex, the main features of the magnetization reversal mechanism can be understood by performing detailed investigation on the effect of the deposition temperature and the angle of magnetic field. - Highlights: • Series of FePt films with L1{sub 0} phase have been prepared. • We focused on the magnetization reversal mechanism with varying thicknesses. • The angle-dependence of switching process is revealed in the FePt films. • Different switching mechanisms were found by increasing the film thickness.

Humidity sensing properties of WO3 thick film resistor prepared by screen printing technique

International Nuclear Information System (INIS)

Garde, Arun S

2014-01-01

Highlights: • Polycrystalline WO 3 Thick films are fabricated by screen printing technique. • Monoclinic phases were the majority in formation of films. • The peak at 1643 cm −1 shows stretching vibrations attributed to W-OH of adsorbed H 2 O. • Absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds. • Increase in resistance with decrease in RH when exposed to 20–100% RH. - Abstract: Thick films of tungsten oxide based were prepared using standard screen printing technique. To study the effect of temperature on the thick films were fired at different temperature for 30 min in air atmosphere. The WO 3 thick films were characterized with X-ray diffraction, scanning electron microscopy and EDAX for elemental analysis. The formation of mixed phases of the film together with majority of monoclinic phase was observed. IR spectra confirm the peak at 1643 cm −1 clearly shows stretching vibrations attributed to the W-OH bending vibration mode of the adsorbed water molecules. The absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds (i.e. ν [W-O inter -W]). The peak located at 983 cm −1 belong to W=O terminal of cluster boundaries. A change in the resistance was observed with respect to the relative humidity when the WO 3 thick films were exposed to a wide humidity range of 20–100%. An increasing firing temperature of WO 3 film increases with the sensitivity. The parameters such as sensitivity and hysteresis of the WO 3 film sensors have been evaluated

Thickness Measurement of V2O5 Nanometric Thin Films Using a Portable XRF

Directory of Open Access Journals (Sweden)

Fabio Lopes

2016-01-01

Full Text Available Nanometric thin films have always been chiefly used for decoration; however they are now being widely used as the basis of high technology. Among the various physical qualities that characterize them, the thickness strongly influences their properties. Thus, a new procedure is hereby proposed and developed for determining the thickness of V2O5 nanometric thin films deposited on the glass surface using Portable X-Ray Fluorescence (PXRF equipment and the attenuation of the radiation intensity Kα of calcium present in the glass. It is shown through the present paper that the radiation intensity of calcium Kα rays is proportional to film thickness in nanometric films of vanadium deposited on the glass surface.

Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

Science.gov (United States)

Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

2018-04-01

Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

Advanced engineering materials and thick film hybrid circuit technology

International Nuclear Information System (INIS)

Faisal, S.; Aslam, M.; Mehmood, K.

2006-01-01

The use of Thick Film hybrid Technology to manufacture electronic circuits and passive components continues to grow at rapid rate. Thick Film Technology can be viewed as a means of packaging active devices, spanning the gap between monolithic integrated circuit chips and printed circuit boards with attached active and passive components. An advancement in engineering materials has moved from a formulating art to a base of greater understanding of relationship of material chemistry to the details of electrical and mechanical performance. This amazing advancement in the field of engineering materials has brought us up to a magnificent standard that we are able to manufacture small size, low cost and sophisticated electronic circuits of Military, Satellite systems, Robotics, Medical and Telecommunications. (author)

Screen printed thick film based pMUT arrays

DEFF Research Database (Denmark)

Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain

2008-01-01

This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

Thickness of Residual Wetting Film in Liquid-Liquid Displacement in Capillary Channels

Science.gov (United States)

Beresnev, I. A.; Gaul, W.; Vigil, D.

2010-12-01

Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a non-wetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of this wetting film? Understanding this question may determine the ultimate oil recovery. A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. We develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of about 20 % the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

X-ray diffractometry of 10 nm thick YBa2Cu3O7-x films

International Nuclear Information System (INIS)

Drozdov, Yu.N.; Moldavskaya, L.D.; Parafin, A.E.

1998-01-01

We report on some specific features of the X-ray diffraction spectra for ultrathin c-axis-oriented YBCO films. The films were prepared by laser deposition on LaAlO 3 substrates. A DRON-4 powder diffractometer was used to analyze a structure and to measure thickness of the films. We find that this conventional technique can detect the YBCO films as thin as 5 nm. The X-ray interference fringes in the vicinity of the (005) YBCO reflections for the films from 10 to 20 nm thick were clearly visible. The oscillation period of the fringes depends on the thickness of the film and the intensity modulation yields some structural information. The I(-1)/I(+1) fringes intensity ratio was found to be sensitive to the type of atomic layer at the top and bottom of YBCO film [ru

Development of a metrology method for composition and thickness of barium strontium titanate thin films

International Nuclear Information System (INIS)

Remmel, Thomas; Werho, Dennis; Liu, Ran; Chu, Peir

1998-01-01

Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

Thin film thickness measurement error reduction by wavelength selection in spectrophotometry

International Nuclear Information System (INIS)

Tsepulin, Vladimir G; Perchik, Alexey V; Tolstoguzov, Victor L; Karasik, Valeriy E

2015-01-01

Fast and accurate volumetric profilometry of thin film structures is an important problem in the electronic visual display industry. We propose to use spectrophotometry with a limited number of working wavelengths to achieve high-speed control and an approach to selecting the optimal working wavelengths to reduce the thickness measurement error. A simple expression for error estimation is presented and tested using a Monte Carlo simulation. The experimental setup is designed to confirm the stability of film thickness determination using a limited number of wavelengths

Experimental study of the polymer powder film thickness uniformity produced by the corona discharge

Science.gov (United States)

Fazlyyyakhmatov, Marsel

2017-01-01

The results of an experimental study of the polymer powder film thickness uniformity are presented. Polymer powder films are produced by the electrostatic field of corona discharge. Epoxy and epoxy-polyester powder films with thickness in the range of 30-120 microns are studied. Experimentally confirmed possibility of using these coatings as protective matching layer of piezoceramic transducers at frequencies of 0.5-15 MHz.

Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

Science.gov (United States)

Lugo, J. M.; Oliva, A. I.

2017-02-01

The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

International Nuclear Information System (INIS)

Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

2013-01-01

We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO 3 film grown on (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness

In-situ study of pn-heterojunction interface states in organic thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ye, Rongbin, E-mail: ye@iwate-u.ac.jp; Ohta, Koji; Baba, Mamoru

2014-03-03

In this paper, we have investigated the density of pn-heterojunction interface states by evaluating the threshold voltage shift with in-situ measurement of electrical characteristics of a sandwich fluorinated copper phthalocyanine/pentacene thin film transistor with various thicknesses of pentacene thin films. A threshold voltage (V{sub T}) undergoes a significant shift from + 20.6 to + 0.53 V with increasing the thickness of pentacene. When the thickness of pentacene is more than a critical thickness of 15 nm, V{sub T} undergoes hardly any shift. On the other hand, the value of mobility is lightly decreased with increasing the thickness of pentacene due to the effect of the bulk current. Thus the V{sub T} shift is attributed to the increase of drain current in the sandwich device. In order to explain the V{sub T} shift, a model was assumed in the linear region of thin film transistor operation and the V{sub T} shift agrees with a tan{sup −1} function of film thickness. The total charge density (Q{sub 0}) of 1.53 × 10{sup −7} C/cm{sup 2} (9.56 × 10{sup 11} electrons or holes/cm{sup 2}) was obtained. Furthermore, the V{sub T} shift and Q{sub 0} could be adjusted by selecting a p-type semiconductor. - Highlights: • A threshold voltage was in-situ measured in an organic sandwich thin film transistor. • Density of pn-heterojunction interface states by evaluating the threshold voltage shift. • The threshold voltage shift attributes to the increase of drain current. • In order to explain the threshold voltage shift, a model was assumed.

Through-thickness thermal conductivity enhancement of graphite film/epoxy composite via short duration acidizing modification

Science.gov (United States)

Wang, Han; Wang, Shaokai; Lu, Weibang; Li, Min; Gu, Yizhou; Zhang, Yongyi; Zhang, Zuoguang

2018-06-01

Graphite films have excellent in-plane thermal conductivity but extremely low through-thickness thermal conductivity because of their intrinsic inter-layer spaces. To improve the inter-layer heat transfer of graphite films, we developed a simple interfacial modification with a short duration mixed-acid treatment. The effects of the mixture ratio of sulfuric and nitric acids and treatment time on the through-thickness thermal properties of graphite films were studied. The modification increased the through-thickness thermal conductivity by 27% and 42% for the graphite film and its composite, respectively. X-ray photoelectron spectroscopy, X-ray powder diffraction, and scanning electron microscopy results indicated that the acidification process had two competing effects: the positive contribution made by the enhanced interaction between the graphite layers induced by the functional groups and the negative effect from the destruction of the graphite layers. As a result, an optimal acidification method was found to be sulfuric/nitric acid treatment with a mixture ratio of 3:1 for 15 min. The resultant through-thickness thermal conductivity of the graphite film could be improved to 0.674 W/mK, and the corresponding graphite/epoxy composite shows a through-thickness thermal conductivity of 0.587 W/mK. This method can be directly used for graphite films and their composite fabrication to improve through-thickness thermal conductivity.

Polymer Thick-Film Sensors: Possibilities for Smartcard Biometrics

NARCIS (Netherlands)

Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, Pieter H.

In this paper the potential of polymer thick-film sensors are assessed for use as biometric sensors on smartcards. Piezoelectric and piezoresistive sensors have been printed on flexible polyester, then bonded to smartcard blanks. The tactile interaction of a person with these sensors has been

Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

Science.gov (United States)

El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

2006-08-01

Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

Organic phthalocyanine films with high mobilities for efficient field-effect transistor switches

Czech Academy of Sciences Publication Activity Database

Schauer, F.; Zhivkov, I.; Nešpůrek, Stanislav

266-269, 1-3 (2000), s. 999-1003 ISSN 0022-3093. [International Conference on Amorphous and Microcrystalline Semiconductors /18./. Snowbird, 23.08.1999-27.08.1999] R&D Projects: GA MŠk OC 518.10; GA AV ČR KSK2050602 Institutional research plan: CEZ:AV0Z4050913 Keywords : phthalocyanine * charge mobility * field-effect transistor Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.269, year: 2000

Oxygen effects on the interfacial electronic structure of titanyl phthalocyanine film: p-Type doping, band bending and Fermi level alignment

International Nuclear Information System (INIS)

Nishi, Toshio; Kanai, Kaname; Ouchi, Yukio; Willis, Martin R.; Seki, Kazuhiko

2006-01-01

The effect of oxygen doping on titanyl phthalocyanine (TiOPc) film was investigated by ultraviolet photoelectron spectroscopy (UPS). The electronic structure of the interface formed between TiOPc films deposited on highly oriented pyrolytic graphite (HOPG) was clearly different between the films prepared in ultrahigh vacuum (UHV) and under O 2 atmosphere (1.3 x 10 -2 Pa). The film deposited in UHV showed downward band bending characteristic of n-type semiconductor, possibly due to residual impurities working as unintentional n-type dopants. On the other hand, the film deposited under O 2 atmosphere showed upward band bending characteristic of p-type semiconductor. Such trends, including the conversion from n- to p-type, are in excellent correspondence with reported field effect transistor characteristics of TiOPc, and clearly demonstrates that bulk TiOPc film was p-doped with oxygen. In order to examine the Fermi level alignment between TiOPc film and the substrate, the energy of the highest occupied molecular orbital (HOMO) of TiOPc relative to the Fermi level of the conductive substrate was determined for various substrates. The alignment between the Fermi level of conductive substrate and Fermi level of TiOPc film at fixed energy in the bandgap was not observed for the TiOPc film prepared in UHV, possibly because of insufficient charge density in the TiOPc film. This situation was drastically changed when the TiOPc film exposed to O 2 , and clear alignment of the Fermi level fixed at 0.6 eV above the HOMO with the Fermi level of the conducting substrate was observed, probably by p-type doping effect of oxygen. These are the first direct and quantitative information about bulk oxygen doping from the viewpoint of the electronic structure. These results suggest that similar band bending with Fermi level alignment may be also achieved for other organic semiconductors under practical device conditions, and also call for caution at the comparison of experimental

Film thickness measurement based on nonlinear phase analysis using a Linnik microscopic white-light spectral interferometer.

Science.gov (United States)

Guo, Tong; Chen, Zhuo; Li, Minghui; Wu, Juhong; Fu, Xing; Hu, Xiaotang

2018-04-20

Based on white-light spectral interferometry and the Linnik microscopic interference configuration, the nonlinear phase components of the spectral interferometric signal were analyzed for film thickness measurement. The spectral interferometric signal was obtained using a Linnik microscopic white-light spectral interferometer, which includes the nonlinear phase components associated with the effective thickness, the nonlinear phase error caused by the double-objective lens, and the nonlinear phase of the thin film itself. To determine the influence of the effective thickness, a wavelength-correction method was proposed that converts the effective thickness into a constant value; the nonlinear phase caused by the effective thickness can then be determined and subtracted from the total nonlinear phase. A method for the extraction of the nonlinear phase error caused by the double-objective lens was also proposed. Accurate thickness measurement of a thin film can be achieved by fitting the nonlinear phase of the thin film after removal of the nonlinear phase caused by the effective thickness and by the nonlinear phase error caused by the double-objective lens. The experimental results demonstrated that both the wavelength-correction method and the extraction method for the nonlinear phase error caused by the double-objective lens improve the accuracy of film thickness measurements.

Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

Science.gov (United States)

Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

2012-12-01

In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

State of the art in thin film thickness and deposition rate monitoring sensors

International Nuclear Information System (INIS)

Buzea, Cristina; Robbie, Kevin

2005-01-01

In situ monitoring parameters are indispensable for thin film fabrication. Among them, thickness and deposition rate control are often the most important in achieving the reproducibility necessary for technological exploitation of physical phenomena dependent on film microstructure. This review describes the types of thickness and deposition rate sensors and their theoretical and phenomenological background, underlining their performances, as well as advantages and disadvantages

Film thickness degradation of Au/GaN Schottky contact characteristics

International Nuclear Information System (INIS)

Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

2005-01-01

Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

The effect of wet film thickness on VOC emissions from a finishing varnish.

Science.gov (United States)

Lee, Shun-Cheng; Kwok, Ngai-Hong; Guo, Hai; Hung, Wing-Tat

2003-01-20

Finishing varnishes, a typical type of oil-based varnishes, are widely used to shine metal, wood trim and cabinet surfaces in Hong Kong. The influence of wet film thickness on volatile organic compound (VOC) emissions from a finishing varnish was studied in an environmental test chamber. The varnish was applied on an aluminium foil with three different wet film thickness (35.2, 69.9 and 107.3 microm). The experimental conditions were 25.0 degrees C, 50.0% relative humidity (RH) with an air exchange rate of 0.5 h(-1). The concentrations of the major VOCs were monitored for the first 10 h. The air samples were collected by canisters and analysed by gas chromatography/mass selective detector (GC/MSD). Six major VOCs including toluene, chlorobenzene, ethylbenzene, m,p-xylene, o-xylene and 1,3,5-trimethylbenzene were identified and quantified. Marked differences were observed for three different film thicknesses. VOC concentrations increased rapidly during the first few hours and then decreased as the emission rates declined. The thicker the wet film, the higher the VOC emissions. A model expression included an exponentially decreasing emission rate of varnish film. The concentration and time data measured in the chamber were used to determine the parameters of empirical emission rate model. The present work confirmed that the film thickness of varnish influenced markedly the concentrations and emissions of VOCs. Copyright 2002 Elsevier Science B.V.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

Science.gov (United States)

Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

2018-03-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Synthesis and photophysical properties of indium(III) phthalocyanine derivatives

Energy Technology Data Exchange (ETDEWEB)

Özceşmeci, İbrahim, E-mail: ozcesmecii@itu.edu.tr [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gelir, Ali [Department of Physics, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gül, Ahmet [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey)

2014-03-15

Three chloroindium(III) phthalocyanine derivatives bearing four aromatic (naphthalene or pyrene) or aliphatic (hexylthio) groups were prepared from corresponding phthalonitrile compounds. The indium(III) phthalocyanine derivatives were characterized with elemental analyses, mass, proton nuclear magnetic resonance ({sup 1}H NMR), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet–visible spectroscopy (UV–vis) techniques. Quantum yields and the energy transfer from the substituents to phthalocyanine core were examined. No energy transfer was observed for 5. The energy transfer efficiency from pyrene units to indium phthalocyanine core was calculated as 0.27 for 6. Quantum yields of all samples were very small due to heavy atom effect of indium atom in the core. It was also observed that upon binding of pyrene and naphthalene units to indium phthalocyanine as substituents, the quantum yields of indium phthalocyanine parts of 5 and 6 decreased. -- Highlights: • Three chloroindium(III) phthalocyanines were prepared and characterized. • Aggregation properties of these compounds were investigated. • The energy transfer efficiency was examined. • Quantum yield of these systems were calculated.

Design of instantaneous liquid film thickness measurement system for conductive or non-conductive fluid with high viscosity

Directory of Open Access Journals (Sweden)

Yongxin Yu

2017-06-01

Full Text Available In the paper, a new capacitive sensor with a dielectric film coating was designed to measure the thickness of the liquid film on a flat surface. The measured medium can be conductive or non-conductive fluid with high viscosity such as silicone oil, syrup, CMC solution and melt. With the dielectric film coating, the defects caused by the humidity in a capacitor can be avoided completely. With a excitation frequency 0-20kHz, the static permittivity of capacitive sensor is obtained and stable when small thicknesses are monitored within the frequency of 0-3kHz. Based on the measurement principle, an experimental system was designed and verified including calibration and actual measurement for different liquid film thickness. Experimental results showed that the sensitivity, the resolution, repeatability and linear range of the capacitive sensor are satisfied to the liquid film thickness measurement. Finally, the capacitive measuring system was successfully applied to the water, silicone oil and syrup film thickness measurement.

Charge transport in films of Geobacter sulfurreducens on graphite electrodes as a function of film thickness

KAUST Repository

Jana, Partha Sarathi; Katuri, Krishna; Kavanagh, Paul; Kumar, Amit Ravi Pradeep; Leech, Dó nal

2014-01-01

Harnessing, and understanding the mechanisms of growth and activity of, biofilms of electroactive bacteria (EAB) on solid electrodes is of increasing interest, for application to microbial fuel and electrolysis cells. Microbial electrochemical cell technology can be used to generate electricity, or higher value chemicals, from organic waste. The capability of biofilms of electroactive bacteria to transfer electrons to solid anodes is a key feature of this emerging technology, yet the electron transfer mechanism is not fully characterized as yet. Acetate oxidation current generated from biofilms of an EAB, Geobacter sulfurreducens, on graphite electrodes as a function of time does not correlate with film thickness. Values of film thickness, and the number and local concentration of electrically connected redox sites within Geobacter sulfurreducens biofilms as well as a charge transport diffusion co-efficient for the biofilm can be estimated from non-turnover voltammetry. The thicker biofilms, of 50 ± 9 μm, display higher charge transport diffusion co-efficient than that in thinner films, as increased film porosity of these films improves ion transport, required to maintain electro-neutrality upon electrolysis. This journal is © the Partner Organisations 2014.

A study for anticorrosion and tribological behaviors of thin/thick diamond-like carbon films in seawater

Science.gov (United States)

Ye, Yewei; Jia, Shujuan; Zhang, Dawei; Liu, Wei; Zhao, Haichao

2018-03-01

The thin and thick diamond-like carbon (DLC) films were prepared by unbalanced magnetron sputtering technique on 304L stainless steels and (100) silicon wafers. Microstructure, mechanical, corrosion and tribological properties were systematically investigated by SEM, Raman, nanoindenter, scratch tester, modulab electrochemical workstation and R-tec multifunctional tribological tester. Results showed that the adhesion force presented a descending trend with the growth in soaking time. The adhesion force of the thin DLC film with high residual compressive stress (‑3.72 GPa) was higher than that of the thick DLC film (‑2.96 GPa). During the corrosion test, the thick DLC film showed a higher impendence and a lower corrosion current density than the thin DLC film, which is attributed to the barrier action of large thickness. Compared to bare 304L substrate, the friction coefficients and wear rates of DLC films in seawater were obviously decreased. Meanwhile, the thin DLC film with ideal residual compressive stress, super adhesion force and good plastic deformation resistance revealed an excellent anti-wear ability in seawater.

The determination of the pressure viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements

NARCIS (Netherlands)

Leeuwen, van H.J.

2009-01-01

The pressure viscosity coefficient is an indispensable property in the EHD lubrication of hard contacts, but often not known. A guess will easily lead to enormous errors in the film thickness. This paper describes a method to deduct this coefficient by adapting the value of the pressure viscosity

The determination of the pressure-viscosity coefficient of two traction oils using film thickness measurements

NARCIS (Netherlands)

Leeuwen, van H.J.

2010-01-01

The pressure-viscosity coefficients of two commercial traction fluids are determined by fitting calculation results on accurate film thickness measurements, obtained at a wide range of speeds, and different temperatures. Film thickness values are calculated using a numerical method and approximation

Effect of Ni Doping on Gas Sensing Performance of ZnO Thick Film Resistor

Directory of Open Access Journals (Sweden)

M. K. DEORE

2010-11-01

Full Text Available This work investigates the use of ZnO-NiO as a H2S metal oxide thick film gas sensor. To find the optimum ratio of NiO to ZnO, two compositions were prepared using different molecular percentages and prepared as a thick film paste. These pastes were then screen-printed onto glass substrates with suitable binder. The final composition of each film was determined using SEM analysis. The films were used to detect CO, CL2, ethanol, Amonia and H2S. For each composition tested, the highest responses where displayed for H2S gas. The Thick film having composition of equal molar ZnO and NiO shows the highest response at operating temp. 350 0C for 100 ppm level. The gas response, selectivity, response and recovery time of the sensor were measured and presented. The role played by NiO species is to improve the gas sensing performance is discussed.

Quantifying Local Thickness and Composition in Thin Films of Organic Photovoltaic Blends by Raman Scattering

KAUST Repository

Rodríguez-Martínez, Xabier

2017-07-06

We report a methodology based on Raman spectroscopy that enables the non-invasive and fast quantitative determination of local thickness and composition in thin films (from few monolayers to hundreds of nm) of one or more components. We apply our methodology to blends of organic conjugated materials relevant in the field of organic photovoltaics. As a first step, we exploit the transfer-matrix formalism to describe the Raman process in thin films including reabsorption and interference effects of the incoming and scattered electric fields. This allows determining the effective solid-state Raman cross-section of each material by studying the dependence of the Raman intensity on film thickness. These effective cross sections are then used to estimate the local thickness and composition in a series of polymer:fullerene blends. We find that the model is accurate within ±10 nm in thickness and ±5 vol% in composition provided that (i) the film thickness is kept below the thickness corresponding to the first maximum of the calculated Raman intensity oscillation; (ii) the materials making up the blend show close enough effective Raman cross-sections; and (iii) the degree of order attained by the conjugated polymer in the blend is similar to that achieved when cast alone. Our methodology opens the possibility to make quantitative maps of composition and thickness over large areas (from microns to centimetres squared) with diffraction-limited resolution and in any multi-component system based thin film technology.

Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

Energy Technology Data Exchange (ETDEWEB)

Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

2016-06-15

Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

Electrical and Gas Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen-printing Method

Directory of Open Access Journals (Sweden)

R. Y. BORSE

2008-10-01

Full Text Available Thick films of tin-oxide (SnO2 were deposited on alumina substrates employing screen-printing technique. The films were dried and fired at 680 0C for 30 minutes. The variation of D.C. resistance of thick films was measured in air as well as in H2S gas atmosphere as a function of temperature. The SnO2 films exhibit semiconducting behaviour. The SnO2 thick films studied were also showing decrease in resistance with increase of concentration of H2S gas. The film resistors showed the highest sensitivity to H2S gas at 350 0C. The XRD studies of the thick film indicate the presence of different phases of SnO2. The elemental analysis was confirmed by EDX spectra. The surface morphological study of the films was analyzed by SEM. The microstructure of the films was porous resulting from loosely interconnected small crystallites. The parameters such as grain size, activation energy, sensitivity and response time were described.

Room temperature ferromagnetism in a phthalocyanine based carbon material

International Nuclear Information System (INIS)

Honda, Z.; Sato, K.; Sakai, M.; Fukuda, T.; Kamata, N.; Hagiwara, M.; Kida, T.

2014-01-01

We report on a simple method to fabricate a magnetic carbon material that contains nitrogen-coordinated transition metals and has a large magnetic moment. Highly chlorinated iron phthalocyanine was used as building blocks and potassium as a coupling reagent to uniformly disperse nitrogen-coordinated iron atoms on the phthalocyanine based carbon material. The iron phthalocyanine based carbon material exhibits ferromagnetic properties at room temperature and the ferromagnetic phase transition occurs at T c  = 490 ± 10 K. Transmission electron microscopy observation, X-ray diffraction analysis, and the temperature dependence of magnetization suggest that the phthalocyanine molecules form three-dimensional random networks in the iron phthalocyanine based carbon material

Room temperature ferromagnetism in a phthalocyanine based carbon material

Energy Technology Data Exchange (ETDEWEB)

Honda, Z., E-mail: honda@fms.saitama-u.ac.jp; Sato, K.; Sakai, M.; Fukuda, T.; Kamata, N. [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570 (Japan); Hagiwara, M.; Kida, T. [KYOKUGEN (Center for Quantum Science and Technology under Extreme Conditions), Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

2014-02-07

We report on a simple method to fabricate a magnetic carbon material that contains nitrogen-coordinated transition metals and has a large magnetic moment. Highly chlorinated iron phthalocyanine was used as building blocks and potassium as a coupling reagent to uniformly disperse nitrogen-coordinated iron atoms on the phthalocyanine based carbon material. The iron phthalocyanine based carbon material exhibits ferromagnetic properties at room temperature and the ferromagnetic phase transition occurs at T{sub c} = 490 ± 10 K. Transmission electron microscopy observation, X-ray diffraction analysis, and the temperature dependence of magnetization suggest that the phthalocyanine molecules form three-dimensional random networks in the iron phthalocyanine based carbon material.

Investigation on feasibility and detection limits for determination of coating film thickness by neutron activation analysis

International Nuclear Information System (INIS)

Yao Maoying; Xu Jiayun; Zhang Dida; Yang Zunyong; Yao Zhenqiang; Wang Mingqiu; Gao Dangzhong

2010-01-01

A method for the determination of coating film thickness by neutron activation was proposed in this paper. After Au, Al and Cu et al.films were activated with a Am-Be neutron source, the characteristic γ-rays emitted by the activated nuclides in the films were counted with a HPGe γ spectrometer. The detection limits of film thickness by using a nuclear reactor neutron source were deduced on the basis of the γ-ray counts and the Monte-Carlo simulated detection efficiencies. The possible detection limits are typically 4-5 orders of magnitude better than those by fluorescent X-ray method, which is currently widely used to determine coating film thickness. (authors)

Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

Science.gov (United States)

Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

2018-05-01

Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

International Nuclear Information System (INIS)

Sridhar, N.; Chung, D.D.L.

1992-01-01

This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

Simultaneous measurements of thickness and temperature profile in a wavy liquid film falling freely on a heating wall

International Nuclear Information System (INIS)

Lyu, T.; Mudawar, I.

1990-01-01

This paper reports on a technique for measuring the thickness of liquid films that was developed and tested. The feasibility of this technique was demonstrated in stagnant liquid films as well as in liquid jets. A procedure for in-situ calibration of the thickness probe was developed, allowing the adaptation of the probe to measurements of wavy liquid films. The thickness probe was constructed from a platinum-rhodium wire that was stretched across the film. A constant DC current was supplied through the probe wire, and film thickness was determined from variations in the probe voltage drop resulting from the large differences in the electrical resistances of the wetted and unwetted segments of the wire. Unlike electrical admittance thickness probes, the new probe did not require dissolving an electrolyte in the liquid, making the new probe well suited to studies involving sensible heating of a film of pure dielectric liquid that is in direct contact with a current- carrying wall. Also presented is a composite probe that facilitated simultaneous measurements of temperature profile across a wavy liquid film and film thickness. Experimental results demonstrate a strong influence of waviness on liquid temperature in a film of deionized water falling freely on the outside wall of a vertical, electrically heated tube for film Reynolds numbers smaller than 10,000

Description of spin reorientation transition in Au/Co/Au sandwich with Co film thickness within a simple phenomenological model of ferromagnetic film

International Nuclear Information System (INIS)

Popov, A.P.

2012-01-01

Simple phenomenological model of ferromagnetic film characterized by equal energies of surface anisotropies at two sides of a film (symmetric film) is considered. The model is used to describe a two-step spin reorientation transition (SRT) in Au/Co/Au sandwich with Co film thickness: the SRT from perpendicular to canted noncollinear (CNC) state at N ⊥ =6.3 atomic layers and the subsequent SRT from CNC to in-plane state at N ∥ =10.05 atomic layers. Analytic expressions for the stability criterion of collinear perpendicular and in-plane states of a film are derived with account of discrete location of atomic layers. The dependence of borders that separate regions corresponding to various magnetic states of a film in the (k B ,k S )-diagram on film thickness N is established. k S (k B ) is surface (bulk) reduced anisotropy constant. The comparison of theory with experiment related to Au/Co/Au sandwich shows that there is a whole region in the (k B ,k S )-diagram corresponding to experimentally determined values of threshold film thicknesses N ⊥ =6.3 and N ∥ =10.05. The comparison of this region with similar region determined earlier for a bare Co/Au film within the same model of asymmetric film and characterized by N ⊥ =3.5, N ∥ =5.5 shows that the intersection of these regions is not empty. Hence, both the SRT in Au/Co/Au sandwich and in bare Co/Au film with Co film thickness can be described within the same model using the same magnitudes of model parameters k S , k B . Based on this result we conclude that the energy of Neel surface anisotropy at free Co surface is negligible compared to the energy of Co–Au interface anisotropy. It is demonstrated that the destabilization of collinear states in symmetric film leads to occurrence of the ground CNC state and two novel metastable CNC states. These three CNC states exhibit different kinds of symmetry. In case of asymmetric film only ground CNC state occurs on destabilization of collinear states of a film

Growth of BaTiO3-PVDF composite thick films by using aerosol deposition

Science.gov (United States)

Cho, Sung Hwan; Yoon, Young Joon

2016-01-01

Barium titanate (BaTiO3)-polyvinylidene fluoride (PVDF) composite thick films were grown by using aerosol deposition at room temperature with BaTiO3 and PVDF powders. To produce a uniform composition in ceramic and polymer composite films, which show a substantial difference in specific gravity, we used PVDF-coated BaTiO3 powders as the starting materials. An examination of the microstructure confirmed that the BaTiO3 were well distributed in the PVDF matrix in the form of a 0 - 3 compound. The crystallite size in the BaTiO3-PVDF composite thick films was 5 ˜ 50 times higher than that in pure BaTiO3 thick films. PVDF plays a role in suppressing the fragmentation of BaTiO3 powder during the aerosol deposition process and in controlling the relative permittivity.

The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

International Nuclear Information System (INIS)

Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

2016-01-01

The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.

2006-01-01

A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

DEFF Research Database (Denmark)

Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

2012-01-01

We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... yield of 98%. The robust fabrication process allowed a high pressure treatment of the screen printed PZT thick films prior to sintering. The high pressure treatment improved the PZT thick film performance and increased the harvester power output to 37.1 μW at 1 g root mean square acceleration. We also...... characterize the harvester performance when only one of the PZT layers is used while the other is left open or short circuit....

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

Science.gov (United States)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

On the Correlation of Specific Film Thickness and Gear Pitting Life

Science.gov (United States)

Krantz, Timothy L.

2015-01-01

The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness defined as the ratio of lubricant film thickness to the composite surface roughness. It can be difficult to combine results of studies to create a cohesive and comprehensive dataset. In this work gear surface fatigue lives for a wide range of specific film values were studied using tests done with common rigs, speeds, lubricant temperatures, and test procedures. This study includes previously reported data, results of an additional 50 tests, and detailed information from lab notes and tested gears. The dataset comprised 258 tests covering specific film values (0.47 to 5.2). The experimentally determined surface fatigue lives, quantified as 10-percent life estimates, ranged from 8.7 to 86.8 million cycles. The trend is one of increasing life for increasing specific film. The trend is nonlinear. The observed trends were found to be in good agreement with data and recommended practice for gears and bearings. The results obtained will perhaps allow for the specific film parameter to be used with more confidence and precision to assess gear surface fatigue for purpose of design, rating, and technology development.

Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

Energy Technology Data Exchange (ETDEWEB)

Cao Yu; Li Xiangyou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China); Zeng Xiaoyan [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China)], E-mail: xyzeng@mail.hust.edu.cn

2008-05-25

With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated.

Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

International Nuclear Information System (INIS)

Cao Yu; Li Xiangyou; Zeng Xiaoyan

2008-01-01

With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated

Effect of Firing Temperature on Humidity Sensing Properties of SnO2 Thick Film Resistor

Directory of Open Access Journals (Sweden)

R. Y. Borse

2009-12-01

Full Text Available Thick films of SnO2 were prepared using standard screen printing technique. The films were dried and fired at different temperatures. Tin-oxide is an n-type wide band gap semiconductor, whose resistance is described as a function of relative humidity. An increasing firing temperature on SnO2 film increases the sensitivity to humidity. The parameters such as sensitivity, response times and hysteresis of the SnO2 film sensors have been evaluated. The thick films were characterized by XRD, SEM and EDAX and grain size, composition of elements, relative phases are obtained.

Shearing Nanometer-Thick Confined Hydrocarbon Films: Friction and Adhesion

DEFF Research Database (Denmark)

Sivebæk, I. M.; Persson, B. N. J.

2016-01-01

We present molecular dynamics (MD) friction and adhesion calculations for nanometer-thick confined hydrocarbon films with molecular lengths 20, 100 and 1400 carbon atoms. We study the dependency of the frictional shear stress on the confining pressure and sliding speed. We present results...

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

Science.gov (United States)

Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

2017-12-01

La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

Hexacoordinate bonding and aromaticity in silicon phthalocyanine.

Science.gov (United States)

Yang, Yang

2010-12-23

Si-E bondings in hexacoordinate silicon phthalocyanine were analyzed using bond order (BO), energy partition, atoms in molecules (AIM), electron localization function (ELF), and localized orbital locator (LOL). Bond models were proposed to explain differences between hexacoordinate and tetracoordinate Si-E bondings. Aromaticity of silicon phthalocyanine was investigated using nucleus-independent chemical shift (NICS), harmonic oscillator model of aromaticity (HOMA), conceptual density functional theory (DFT), ring critical point (RCP) descriptors, and delocalization index (DI). Structure, energy, bonding, and aromaticity of tetracoordinate silicon phthalocyanine were studied and compared with hexacoordinate one.

Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

International Nuclear Information System (INIS)

Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

2003-01-01

Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

Science.gov (United States)

Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

2018-02-01

Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method

International Nuclear Information System (INIS)

Murthy, L.C.S.; Rao, K.S.R.K.

1999-01-01

A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared films have uniform thickness varying from 200-600 nm and good adherence to the glass substrate. A systematic study has been made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The resistivity, sheet resistance, carrier concentration and mobility values varied from 1.56-5.72x10 -3 Ω-cm, 128-189 Ω/□, 1.6-3.9x10 21 cm -3 and 0.3-3 cm 2 /Vs, respectively for varying film thickness. A systematic increase in mobility with grain size clearly indicates the reduction of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission data, the band gap was estimated and found to vary from 2.20-2.42 eV. These films have transmittance around 77% and average reflectance is below 2.6% in the spectral range 350-850 nm. The films are n-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain boundary formation at a substrate temperature as low as 523 K. (author)

Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor

Directory of Open Access Journals (Sweden)

M. K. DEORE

2010-08-01

Full Text Available Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 oC, 600 oC and 650 oC for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity to H2S gas (100 ppm at 250 oC for firing temperature 650 oC. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDX and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity, selectivity, response and recovery time of the sensor were measured and presented.

Photoinduced electron transfer between benzyloxy dendrimer phthalocyanine and benzoquinone

Science.gov (United States)

Zhang, Tiantian; Ma, Dongdong; Pan, Sujuan; Wu, Shijun; Jiang, Yufeng; Zeng, Di; Yang, Hongqin; Peng, Yiru

2016-10-01

Photo-induced electron transfer (PET) is an important and fundamental process in natural photosynthesis. To mimic such interesting PET process, a suitable donor and acceptor couple were properly chosen. Dendrimer phthalocyanines and their derivatives have emerged as promising materials for artificial photosynthesis systems. In this paper, the electron transfer between the light harvest dendrimer phthalocyanine (donor) and the 1,4-benzoquinone (acceptor) was studied by UV/Vis and fluorescence spectroscopic methods. It was found that fluorescence of phthalocyanine was quenched by benzoquinone (BQ) via excited state electron transfer, from the phthalocyanine to the BQ upon excitation at 610 nm. The Stern-Volmer constant (KSV) of electron transfer was calculated. Our study suggests that this dendritic phthalocyanine is an effective new electron donor and transmission complex and could be used as a potential artificial photosynthesis system.

Synchrotron-based measurements of the electronic structure of the organic semiconductor copper phthalocyanine

International Nuclear Information System (INIS)

Downes, J.E.

2004-01-01

Full text: Copper phthalocyanine (CuPc) is a prototypical molecular organic semiconductor that is currently used in the construction of many organic electronic devices such as organic light emitting diodes (OLEDs). Although the material is currently being used, and despite many experimental and theoretical studies, it's detailed electronic structure is still not completely understood. This is likely due to two key factors. Firstly, the interaction of the Cu 3d and phthalocyanine ligand 2p electrons leads to the formation of a complex arrangement of localized and delocalized states near the Fermi level. Secondly, thin films of the material are subject to damage by the photon beam used to make measurements of their electronic structure. Using the synchrotron-based techniques of soft x-ray emission spectroscopy (XES) and x-ray photoemission spectroscopy (XPS), we have measured the detailed electronic structure of in-situ grown thin film samples of CuPc. Beam damage was minimized by continuous translation of the sample during data acquisition. The results obtained differ significantly from previous XES and ultraviolet photoemission measurements, but are in excellent agreement with recent density functional calculations. The reasons for these discrepancies will be explained, and their implications for future measurements on similar materials will be explored

Effect of thickness on structure, microstructure, residual stress and soft magnetic properties of DC sputtered Fe65Co35 soft magnetic thin films

International Nuclear Information System (INIS)

Prasanna Kumari, T.; Manivel Raja, M.; Kumar, Atul; Srinath, S.; Kamat, S.V.

2014-01-01

The effect of film thickness on structure, microstructure, residual stress and soft magnetic properties of Fe 65 Co 35 thin films deposited on Si(001) and MgO(001) substrates was investigated by varying film thickness from 30 to 600 nm. X-ray diffraction studies showed that the FeCo films are polycrystalline in the as-deposited condition irrespective of deposition on Si or MgO substrate. The microstructure of films consisted of spherical grains for 30 nm film thickness and columnar grains for all other film thicknesses. The grain size for the films was found to increase from 15 to 50 nm with increasing film thickness. The sputtered films also exhibited tensile residual stresses with the magnitude of stress decreasing with increasing film thickness. The Fe 65 Co 35 films deposited on both substrates also exhibited very good in-plane soft magnetic properties with a saturation magnetization 4πM s of ∼23.6–23.8 kG and coercivity of ∼27–30 Oe without any under-layer only for films with thickness of 30 nm. For all other thicknesses, these films exhibited a significantly higher coercivity. The observed variations in soft magnetic properties with film thickness were explained in terms of residual stress and microstructure of the films. - Highlights: • Spherical grain morphology transformed to columnar above 30 nm film thickness. • Sputtered films exhibited tensile residual stresses decreasing with film thickness. • An in-plane coercivity of ∼27–30 Oe was achieved without any under-layer

Interaction of selected gases with zinc phthalocyanine thin films: theoretical and experimental studies

Czech Academy of Sciences Publication Activity Database

Šebera, Jakub; Fitl, P.; Vlček, J.; Vrňata, M.; Fendrych, František; Kopeček, Jaromír; Kratochvílová, Irena

2013-01-01

Roč. 64, č. 1 (2013), "10202-p1"-"10202-p6" ISSN 1286-0042 R&D Projects: GA TA ČR TA01011165; GA ČR(CZ) GAP304/10/1951; GA ČR(CZ) GAP108/11/1298 Institutional support: RVO:68378271 Keywords : Zinc phthalocyanine * charge transport * sensor * DFT Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.789, year: 2013

Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

Science.gov (United States)

Zaki, A. A.; El-Amin, A. A.

2017-12-01

In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

Science.gov (United States)

Polat, B Deniz; Keles, Ozgul

2015-12-01

The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

International Nuclear Information System (INIS)

Foerster, H.

1983-01-01

A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

DEFF Research Database (Denmark)

Pryds, N.; Christensen, Bo Toftmann; Bilde-Sørensen, Jørgen

2006-01-01

of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine...

Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

International Nuclear Information System (INIS)

Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

2017-01-01

Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

Properties of second phase (BaSnO3, Sn) added-YBCO thick films

International Nuclear Information System (INIS)

Ban, E.; Matsuoka, Y.

1997-01-01

The improvement of the critical current density J c of YBCO thick films has been attempted by adding BaSnO 3 powder and ultrafine Sn particles, whose diameter is about 2 μm and 7 x 10 -2 μm, respectively. It was found that the addition of a small amount of these particles was effective for the enhancement of J c of thick films prepared by a liquid-phase processing method. The 1 wt.% BaSnO 3 films fired at T s =1040-1060 C and the 3 wt.% Sn films (T s =1030-1060 C) showed J c values (77 K, 0 T) of about 2.1-2.4 x 10 3 Acm -2 and 3.1-3.5 x 10 3 Acm -2 , respectively, as compared to 2.0 x 10 3 Acm -2 for the undoped films. (orig.)

Reaction products between Bi-Sr-Ca-Cu-oxide thick films and alumina substrates

International Nuclear Information System (INIS)

Alarco, J.A.; Ilushechkin, A.; Yamashita, T.; Bhargava, A.; Barry, J.; Mackinnon, I.D.R.

1997-01-01

The structure and composition of reaction products between Bi-Sr-Ca-Cu-oxide (BSCCO) thick films and alumina substrates have been characterized using a combination of electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometry (EDX). Sr and Ca are found to be the most reactive cations with alumina. Sr 4 Al 6 O 12 SO 4 is formed between the alumina substrates and BSCCO thick films prepared from paste with composition close to Bi-2212 (and Bi-2212+10 wt.% Ag). For paste with composition close to Bi(Pb)-2223 +20 wt.% Ag, a new phase with f.c.c. structure, lattice parameter about a=24.5 A and approximate composition Al 3 Sr 2 CaBi 2 CuO x has been identified in the interface region. Understanding and control of these reactions is essential for growth of high quality BSCCO thick films on alumina. (orig.)

Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

Directory of Open Access Journals (Sweden)

Birgit eHebler

2016-02-01

Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

A method for thickness determination of thin films of amalgamable metals by total-reflection X-ray fluorescence

International Nuclear Information System (INIS)

Bennun, L.; Greaves, E.D.; Barros, H.; Diaz-Valdes, J.

2009-01-01

A method for thickness determination of thin amalgamable metallic films by total-reflection X-ray fluorescence (TXRF) is presented. The peak's intensity in TXRF spectra are directly related to the surface density of the sample, i.e. to its thickness in a homogeneous film. Performing a traditional TXRF analysis on a thin film of an amalgamated metal, and determining the relative peak intensity of a specific metal line, the layer thickness can be precisely obtained. In the case of gold thickness determination, mercury and gold peaks overlap, hence we have developed a general data processing scheme to achieve the most precise results.

Nanostructured MgTiO{sub 3} thick films obtained by electrophoretic deposition from nanopowders prepared by solar PVD

Energy Technology Data Exchange (ETDEWEB)

Apostol, Irina [S.C. IPEE Amiral Trading Impex S.A., 115300 Curtea de Arges (Romania); Mahajan, Amit [Department of Materials and Ceramics Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Monty, Claude J.A. [CNRS-PROMES Laboratory, 66120 Font Romeu Odeillo (France); Venkata Saravanan, K., E-mail: venketvs@cutn.ac.in [Department of Materials and Ceramics Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur 61010 (India)

2015-12-15

Highlights: • Obtaining nano-crystalline magnesium titanium oxide powders by solar physical vapor deposition (SPVD) process. And using these nano-powders to obtain thick films on conducting substrates by electrophoretic deposition (EPD). • SPVD is a core innovative, original and environmentally friendly process to prepare nano-materials in a powder form. • Sintered thick films exhibited dielectric constant, ε{sub r} ∼18.3 and dielectric loss, tan δ ∼0.0012 at 1 MHz, which is comparable to the values reported earlier. • New contributions to the pool of information on the preparation of nano-structured MgTiO{sub 3} thick films at low temperatures. • A considerable decrease in synthesis temperature of pure MgTiO{sub 3} thick film was observed by the combination of SPVD and EPD. - Abstract: A novel combination of solar physical vapor deposition (SPVD) and electrophoretic deposition (EPD) that was developed to grow MgTiO{sub 3} nanostructured thick films is presented. Obtaining nanostructured MgTiO{sub 3} thick films, which can replace bulk ceramic components, a major trend in electronic industry, is the main objective of this work. The advantage of SPVD is direct synthesis of nanopowders, while EPD is simple, fast and inexpensive technique for preparing thick films. SPVD technique was developed at CNRS-PROMES Laboratory, Odeillo-Font Romeu, France, while the EPD was performed at University of Aveiro – DeMAC/CICECO, Portugal. The nanopowders with an average crystallite size of about 30 nm prepared by SPVD were dispersed in 50 ml of acetone in basic media with addition of triethanolamine. The obtained well-dispersed and stable suspensions were used for carrying out EPD on 25 μm thick platinum foils. After deposition, films with thickness of about 22–25 μm were sintered in air for 15 min at 800, 900 and 1000 °C. The structural and microstructural characterization of the sintered thick films was carried out using XRD and SEM, respectively. The

Interaction domains in high-performance NdFeB thick films

Energy Technology Data Exchange (ETDEWEB)

Woodcock, T.G. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)], E-mail: t.woodcock@ifw-dresden.de; Khlopkov, K. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); Walther, A. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); CEA Leti - MINATEC, 17 rue des Martyrs, 38054 Grenoble (France); Dempsey, N.M.; Givord, D. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); Schultz, L.; Gutfleisch, O. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

2009-05-15

The magnetic domain structure in sputtered NdFeB thick films has been imaged by magnetic force microscopy. The local texture of the films was investigated by electron backscatter diffraction. The average misorientation of the grains was shown to decrease with increasing substrate temperature during deposition. Interaction domains were observed and are discussed with reference (i) to the sample grain size compared to the single domain particle size and (ii) to sample texture.

Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

International Nuclear Information System (INIS)

Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y.; Fourmentel, D.; Destouches, C.; Villard, J.F.

2015-01-01

The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m -2 .K -1 and 130 μC.N -1 for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in order to

Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

Energy Technology Data Exchange (ETDEWEB)

Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y. [University Montpellier, IES, UMR 5214, F-34000, Montpellier (France); CNRS, IES, UMR 5214, F-34000, Montpellier (France); Fourmentel, D.; Destouches, C.; Villard, J.F. [CEA, DEN, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul lez Durance (France)

2015-07-01

The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in

Photophysical studies of zinc phthalocyanine and chloroaluminum phthalocyanine incorporated into liposomes in the presence of additives

Directory of Open Access Journals (Sweden)

S.M.T. Nunes

2004-02-01

Full Text Available The photophysical properties of zinc phthalocyanine (ZnPC and chloroaluminum phthalocyanine (AlPHCl incorporated into liposomes of dimyristoyl phosphatidylcholine in the presence and absence of additives such as cholesterol or cardiolipin were studied by time-resolved fluorescence, laser flash photolysis and steady-state techniques. The absorbance of the drugs changed linearly with drug concentration, at least up to 5.0 µM in homogeneous and heterogeneous media, indicating that aggregation did not occur in these media within this concentration range. The incorporation of the drugs into liposomes increases the dimerization constant by one order of magnitude (for ZnPC, 3.6 x 10(4 to 1.0 x 10(5 M-1 and for AlPHCl, 3.7 x 10(4 to 1.5 x 10(5 M-1, but this feature dose does not rule out the use of this carrier, since the incorporation of these hydrophobic drugs into liposomes permits their systemic administration. Probe location in biological membranes and predominant positions of the phthalocyanines in liposomes were inferred on the basis of their fluorescence and triplet state properties. Both phthalocyanines are preferentially distributed in the internal regions of the liposome bilayer. The additives affect the distribution of these drugs within the liposomes, a fact that controls their delivery when both are used in a biological medium, retarding their release. The addition of the additives to the liposomes increases the internalization of phthalocyanines. The interaction of the drugs with a plasma protein, bovine serum albumin, was examined quantitatively by the fluorescence technique. The results show that when the drugs were incorporated into small unilamellar liposomes, the association with albumin was enhanced when compared with organic media, a fact that should increase the selectivity of tumor targeting by these phthalocyanines (for ZnPC, 0.71 x 10(6 to 1.30 x 10(7 M-1 and for AlPHCl, 4.86 x 10(7 to 3.10 x 10(8 M-1.

The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method

International Nuclear Information System (INIS)

Rahal Achour; Benramache Said; Benhaoua Boubaker

2013-01-01

This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO 2 :F thin films were deposited at a 350 °C pending time (5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO 2 :F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 (Ω·cm) −1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO 2 :F thin films deposited by ultrasonic spray was reported. (semiconductor materials)

Effect of Ag film thickness on the optical and the electrical properties in CuAlO2/Ag/CuAlO2 multilayer films grown on glass substrates

International Nuclear Information System (INIS)

Oh, Dohyun; No, Young Soo; Kim, Su Youn; Cho, Woon Jo; Kwack, Kae Dal; Kim, Tae Whan

2011-01-01

Research highlights: The CuAlO 2 /Ag/CuAlO 2 multilayer films were grown on glass substrates using radio-frequency magnetron sputtering at room temperature. Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. The morphology Ag films with a thickness of 8 nm was uniform. The morphology of the Ag films inserted in the CuAlO 2 films significantly affected the optical transmittance and the resistivity of the CuAlO 2 films deposited on glass substrates. The maximum transmittance of the CuAlO 2 /Ag/CuAlO 2 multilayer films with a thickness of 8 nm was 89.16%. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films with an Ag film thickness of 18 nm was as small as about 2.8 x 10 -5 Ω cm. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films was decreased as a result of the thermal annealing treatment. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as TCO films in solar cells. - Abstract: Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. The resistivity of the 40 nm-CuAlO 2 /18 nm-Ag/40 nm-CuAlO 2 multilayer films was 2.8 x 10 -5 Ω cm, and the transmittance of the multilayer films with an Ag film thickness of 8 nm was approximately 89.16%. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as

Frequency Invariability of (Pb,La)(Zr,Ti)O₃ Antiferroelectric Thick-Film Micro-Cantilevers.

Science.gov (United States)

An, Kun; Jin, Xuechen; Meng, Jiang; Li, Xiao; Ren, Yifeng

2018-05-13

Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Rachel L. Wilson

2018-03-01

Full Text Available Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes, at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

2012-10-01

Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

Thickness Dependent Optical Properties of Sol-gel based MgF2 – TiO2 Thin Films

Directory of Open Access Journals (Sweden)

Siddarth Krishnaraja Achar

2018-04-01

Full Text Available MgF2 – TiO2 thin films were prepared by cost effective solgel technique onto glass substrates and optical parameters were determined by envelope technique. Thin films were characterized by optical transmission spectroscopy in the spectral range 290 – 1000 nm. The refractive index, extinction coefficient, Optical thickness and band gap dependency on thickness were evaluated. Thickness dependency of thin films showed direct allowed transition with band gap of 3.66 to 3.73 eV.

Exciplex mediated photoinduced electron transfer reactions of phthalocyanine-fullerene dyads

NARCIS (Netherlands)

Niemi, Marja; Tkachenko, Nikolai V.; Efimov, Alexander; Lehtivuori, Heli; Ohkubo, Kei; Fukuzumi, Shunichi; Lemmetyinen, Helge