Ultra-wide frequency response measurement of an optical system with a DC photo-detector

KAUST Repository

Kuntz, Katanya B.

2017-01-09

Precise knowledge of an optical device\\'s frequency response is crucial for it to be useful in most applications. Traditional methods for determining the frequency response of an optical system (e.g. optical cavity or waveguide modulator) usually rely on calibrated broadband photo-detectors or complicated RF mixdown operations. As the bandwidths of these devices continue to increase, there is a growing need for a characterization method that does not have bandwidth limitations, or require a previously calibrated device. We demonstrate a new calibration technique on an optical system (consisting of an optical cavity and a high-speed waveguide modulator) that is free from limitations imposed by detector bandwidth, and does not require a calibrated photo-detector or modulator. We use a low-frequency (DC) photo-detector to monitor the cavity\\'s optical response as a function of modulation frequency, which is also used to determine the modulator\\'s frequency response. Knowledge of the frequency-dependent modulation depth allows us to more precisely determine the cavity\\'s characteristics (free spectral range and linewidth). The precision and repeatability of our technique is demonstrated by measuring the different resonant frequencies of orthogonal polarization cavity modes caused by the presence of a non-linear crystal. Once the modulator has been characterized using this simple method, the frequency response of any passive optical element can be determined to a fine resolution (e.g. kilohertz) over several gigahertz.

Enhanced Response Speed of ZnO Nanowire Photodetector by Coating with Photoresist

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Xing Yang

2016-01-01

Full Text Available Spin-coating photoresist film on ZnO nanowire (NW was introduced into the fabrication procedure to improve photoresponse and recovery speed of a ZnO NW ultraviolet photoelectric detector. A ZnO NW was first assembled on prefabricated electrodes by dielectrophoresis. Then, photoresist was spin-coated on the nanowire. Finally, a metal layer was electrodeposited on the nanowire-electrode contacts. The response properties and I-V characteristics of ZnO NW photodetector were investigated by measuring the electrical current under different conditions. Measurement results demonstrated that the detector has an enhanced photoresponse and recovery speed after coating the nanowire with photoresist. The photoresponse and recovery characteristics of detectors with and without spin-coating were compared to demonstrate the effects of photoresist and the enhancement of response and recovery speed of the photodetector is ascribed to the reduced surface absorbed oxygen molecules and binding effect on the residual oxygen molecules after photoresist spin-coating. The results demonstrated that surface coating may be an effective and simple way to improve the response speed of the photoelectric device.

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Directory of Open Access Journals (Sweden)

Weichang Zhou

2014-12-01

Full Text Available High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

Ultrasensitive solution-cast quantum dot photodetectors

International Nuclear Information System (INIS)

Konstantatos, G.; Howard, I.; Fischer, A.; Hoogland, S.; Clifford, J.; Klem, E.; Levina, L.; Sargent, E.H.

2007-01-01

Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D * , the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of Pbs colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 10 3 AW -1 . The best devices exhibited a normalized detectivity D * of 1.8 x 10 13 jones (1 jones= 1 cm Hz 1/2 W -1 ) at 1.3μm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D * in the 10 12 ) jones range at room temperature, whereas the previous record for D * from a photoconductive detector lies at 10 11 jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices. (author)

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

Science.gov (United States)

2016-04-19

the free energy of the system [3,4,8]. Intensive research has been aimed at bypassing the intrinsic size limits imposed by the depolarization field...Page 1 of 21   Ultrafast photovoltaic response in ferroelectric nanolayers Dan Daranciang1,2, Matthew J. Highland3, Haidan Wen4, Steve M. Young5...ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on

Thallium bromide photodetectors for scintillation detection

CERN Document Server

Hitomi, K; Shoji, T; Hiratate, Y; Ishibashi, H; Ishii, M

2000-01-01

A wide bandgap compound semiconductor, TlBr, has been investigated as a blue sensitive photodetector material for scintillation detection. The TlBr photodetectors have been fabricated from the TlBr crystals grown by the TMZ method using materials purified by many pass zone refining. The performance of the photodetectors has been evaluated by measuring their leakage current, quantum efficiency, spatial uniformity, direct X-ray detection and scintillation detection characteristics. The photodetectors have shown high quantum efficiency for the blue wavelength region and high spatial uniformity for their optical response. In addition, good direct X-ray detection characteristics with an energy resolution of 4.5 keV FWHM for 22 keV X-rays from a sup 1 sup 0 sup 9 Cd radioactive source have been obtained. Detection of blue scintillation from GSO and LSO scintillators irradiated with a sup 2 sup 2 Na radioactive source has been done successfully by using the photodetectors at room temperature. A clear full-energy pea...

Spectral response, dark current, and noise analyses in resonant tunneling quantum dot infrared photodetectors.

Science.gov (United States)

Jahromi, Hamed Dehdashti; Mahmoodi, Ali; Sheikhi, Mohammad Hossein; Zarifkar, Abbas

2016-10-20

Reduction of dark current at high-temperature operation is a great challenge in conventional quantum dot infrared photodetectors, as the rate of thermal excitations resulting in the dark current increases exponentially with temperature. A resonant tunneling barrier is the best candidate for suppression of dark current, enhancement in signal-to-noise ratio, and selective extraction of different wavelength response. In this paper, we use a physical model developed by the authors recently to design a proper resonant tunneling barrier for quantum infrared photodetectors and to study and analyze the spectral response of these devices. The calculated transmission coefficient of electrons by this model and its dependency on bias voltage are in agreement with experimental results. Furthermore, based on the calculated transmission coefficient, the dark current of a quantum dot infrared photodetector with a resonant tunneling barrier is calculated and compared with the experimental data. The validity of our model is proven through this comparison. Theoretical dark current by our model shows better agreement with the experimental data and is more accurate than the previously developed model. Moreover, noise in the device is calculated. Finally, the effect of different parameters, such as temperature, size of quantum dots, and bias voltage, on the performance of the device is simulated and studied.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

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Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-04

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

KAUST Repository

Flemban, Tahani H.

2017-09-19

Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

High Detectivity Graphene-Silicon Heterojunction Photodetector.

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Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

2016-02-03

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Anti-Hermitian photodetector facilitating efficient subwavelength photon sorting.

Science.gov (United States)

Kim, Soo Jin; Kang, Ju-Hyung; Mutlu, Mehmet; Park, Joonsuk; Park, Woosung; Goodson, Kenneth E; Sinclair, Robert; Fan, Shanhui; Kik, Pieter G; Brongersma, Mark L

2018-01-22

The ability to split an incident light beam into separate wavelength bands is central to a diverse set of optical applications, including imaging, biosensing, communication, photocatalysis, and photovoltaics. Entirely new opportunities are currently emerging with the recently demonstrated possibility to spectrally split light at a subwavelength scale with optical antennas. Unfortunately, such small structures offer limited spectral control and are hard to exploit in optoelectronic devices. Here, we overcome both challenges and demonstrate how within a single-layer metafilm one can laterally sort photons of different wavelengths below the free-space diffraction limit and extract a useful photocurrent. This chipscale demonstration of anti-Hermitian coupling between resonant photodetector elements also facilitates near-unity photon-sorting efficiencies, near-unity absorption, and a narrow spectral response (∼ 30 nm) for the different wavelength channels. This work opens up entirely new design paradigms for image sensors and energy harvesting systems in which the active elements both sort and detect photons.

Spatiotemporal characteristics of retinal response to network-mediated photovoltaic stimulation.

Science.gov (United States)

Ho, Elton; Smith, Richard; Goetz, Georges; Lei, Xin; Galambos, Ludwig; Kamins, Theodore I; Harris, James; Mathieson, Keith; Palanker, Daniel; Sher, Alexander

2018-02-01

Subretinal prostheses aim at restoring sight to patients blinded by photoreceptor degeneration using electrical activation of the surviving inner retinal neurons. Today, such implants deliver visual information with low-frequency stimulation, resulting in discontinuous visual percepts. We measured retinal responses to complex visual stimuli delivered at video rate via a photovoltaic subretinal implant and by visible light. Using a multielectrode array to record from retinal ganglion cells (RGCs) in the healthy and degenerated rat retina ex vivo, we estimated their spatiotemporal properties from the spike-triggered average responses to photovoltaic binary white noise stimulus with 70-μm pixel size at 20-Hz frame rate. The average photovoltaic receptive field size was 194 ± 3 μm (mean ± SE), similar to that of visual responses (221 ± 4 μm), but response latency was significantly shorter with photovoltaic stimulation. Both visual and photovoltaic receptive fields had an opposing center-surround structure. In the healthy retina, ON RGCs had photovoltaic OFF responses, and vice versa. This reversal is consistent with depolarization of photoreceptors by electrical pulses, as opposed to their hyperpolarization under increasing light, although alternative mechanisms cannot be excluded. In degenerate retina, both ON and OFF photovoltaic responses were observed, but in the absence of visual responses, it is not clear what functional RGC types they correspond to. Degenerate retina maintained the antagonistic center-surround organization of receptive fields. These fast and spatially localized network-mediated ON and OFF responses to subretinal stimulation via photovoltaic pixels with local return electrodes raise confidence in the possibility of providing more functional prosthetic vision. NEW & NOTEWORTHY Retinal prostheses currently in clinical use have struggled to deliver visual information at naturalistic frequencies, resulting in discontinuous percepts. We

Self-Powered, High-Speed and Visible-Near Infrared Response of MoO(3-x)/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering.

Science.gov (United States)

Zhao, Chuanxi; Liang, Zhimin; Su, Mingze; Liu, Pengyi; Mai, Wenjie; Xie, Weiguang

2015-11-25

Photodetectors with a wide spectrum response are important components for sensing, imaging, and other optoelectronic applications. A molybdenum oxide (MoO(3-x))/Si heterojunction has been applied as solar cells with great success, but its potential in photodetectors has not been explored yet. Herein, a self-powered, high-speed heterojunction photodetector fabricated by coating an n-type Si hierarchical structure with an ultrathin hole-selective layer of molybdenum oxide (MoO(3-x)) is first investigated. Excellent and stable photoresponse performance is obtained by using a methyl group passivated interface. The heterojunction photodetector demonstrated high sensitivity to a wide spectrum from 300 to 1100 nm. The self-powered photodetector shows a high detectivity of (∼6.29 × 10(12) cmHz(1/2) W(-1)) and fast response time (1.0 μs). The excellent photodetecting performance is attributed to the enhanced interfacial barrier height and three-dimensional geometry of Si nanostructures, which is beneficial for efficient photocarrier collection and transportation. Finally, our devices show excellent long-term stability in air for 6 months with negligible performance degradation. The thermal evaporation method for large-scale fabrication of MoO(3-x)/n-Si photodetectors makes it suitable for self-powered, multispectral, and high-speed response photodetecting applications.

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction.

Science.gov (United States)

Chen, Xing; Liu, Kewei; Zhang, Zhenzhong; Wang, Chunrui; Li, Binghui; Zhao, Haifeng; Zhao, Dongxu; Shen, Dezhen

2016-02-17

Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Digital Alloy Absorber for Photodetectors

Science.gov (United States)

Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

2016-01-01

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Particle analysis and differentiation using a photovoltaic cell

International Nuclear Information System (INIS)

Fu, Lung-Ming; Shu, Wei-En; Wang, Yao-Nan

2012-01-01

A method is proposed for the sizing and counting of fluorescent and non-fluorescent particles of various sizes on a poly-dimethylsiloxane microchip. In the proposed approach, the detection region of the microchip is illuminated by a laser, which is then incident on a power-free photovoltaic cell. As the particles (both fluorescent and non-fluorescent) pass through the detection region, they block the laser beam, causing a reduction in the output voltage of the cell. The voltage signal is interfaced to a PC and is used to determine both the size and the number of the particles. Meanwhile, the fluorescence signal generated by the fluorescent particles within the sample is detected by an avalanche photodetector and is used to differentiate between the fluorescent and non-fluorescent particles in the sample. The effectiveness of the proposed approach is demonstrated using fluorescent-labeled beads with means diameters of 5, 8 and 10 µm, respectively, and unlabeled beads with a mean diameter of 7.2 µm. The experimental results confirm that the forward scattered light signal generated by the photovoltaic cell enables both the size and the number of the particles to be reliably determined. Moreover, it is shown that the number of non-fluorescent particles within the sample can be easily determined by comparing the signals received from the photovoltaic cell and avalanche photodetector, respectively. (paper)

Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance.

Science.gov (United States)

Tan, Dezhi; Zhang, Wenjin; Wang, Xiaofan; Koirala, Sandhaya; Miyauchi, Yuhei; Matsuda, Kazunari

2017-08-31

Layered materials, such as graphene, transition metal dichalcogenides and black phosphorene, have been established rapidly as intriguing building blocks for optoelectronic devices. Here, we introduce highly polarization sensitive, broadband, and high-temperature-operation photodetectors based on multilayer germanium sulfide (GeS). The GeS photodetector shows a high photoresponsivity of about 6.8 × 10 3 A W -1 , an extremely high specific detectivity of 5.6 × 10 14 Jones, and broad spectral response in the wavelength range of 300-800 nm. More importantly, the GeS photodetector has high polarization sensitivity to incident linearly polarized light, which provides another degree of freedom for photodetectors. Tremendously enhanced photoresponsivity is observed with a temperature increase, and high responsivity is achievable at least up to 423 K. The establishment of larger photoinduced reduction of the Schottky barrier height will be significant for the investigation of the photoresponse mechanism of 2D layered material-based photodetectors. These attributes of high photocurrent generation in a wide temperature range, broad spectral response, and polarization sensitivity coupled with environmental stability indicate that the proposed GeS photodetector is very suitable for optoelectronic applications.

ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

Science.gov (United States)

Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

2016-12-01

A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

Traveling-wave photodetector

Science.gov (United States)

Hietala, V.M.; Vawter, G.A.

1993-12-14

The traveling-wave photodetector of the present invention combines an absorptive optical waveguide and an electrical transmission line, in which optical absorption in the waveguide results in a photocurrent at the electrodes of the electrical transmission line. The optical waveguide and electrical transmission line of the electrically distributed traveling-wave photodetector are designed to achieve matched velocities between the light in the optical waveguide and electrical signal generated on the transmission line. This velocity synchronization provides the traveling-wave photodetector with a large electrical bandwidth and a high quantum efficiency, because of the effective extended volume for optical absorption. The traveling-wave photodetector also provides large power dissipation, because of its large physical size. 4 figures.

ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

Science.gov (United States)

Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

2016-12-02

A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W -1 and detectivity of more than 1.02 × 10 13 Jones (Jones = cm Hz 1/2 W -1 ) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W -1 to 1915 A W -1 and the detectivity is improved from 5.8 × 10 12 to 1.0 × 10 13 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

Uncooled infrared photodetectors in Poland

Science.gov (United States)

Piotrowski, J.; Piotrowski, A.

2006-03-01

The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

History of HgTe-based photodetectors in Poland

Science.gov (United States)

Rogalski, A.

2010-09-01

In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

Photovoltaic device on a single ZnO nanowire p–n homojunction

International Nuclear Information System (INIS)

Cho, Hak Dong; Zakirov, Anvar S; Yuldashev, Shavkat U; Kang, Tae Won; Ahn, Chi Won; Yeo, Yung Kee

2012-01-01

A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices. (paper)

High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

Science.gov (United States)

Chen, Yan; Wang, Xudong; Wu, Guangjian; Wang, Zhen; Fang, Hehai; Lin, Tie; Sun, Shuo; Shen, Hong; Hu, Weida; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-03-01

Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe 2 /MoS 2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 5 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W -1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Infrared hot-electron NbN superconducting photodetectors for imaging applications

International Nuclear Information System (INIS)

Il'in, K.S.; Gol'tsman, G.N.; Verevkin, A.A.; Sobolewski, Roman

1999-01-01

We report an effective quantum efficiency of 340, responsivity >200 A W -1 (>10 4 V W -1 ) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into μm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits. (author)

Solution processable organic/inorganic hybrid ultraviolet photovoltaic detector

Directory of Open Access Journals (Sweden)

Xiaopeng Guo

2016-05-01

Full Text Available Ultraviolet (UV photodetector is a kind of important optoelectronic device which can be widely used in scientific and engineering fields including astronomical research, environmental monitoring, forest-fire prevention, medical analysis, and missile approach warning etc. The development of UV detector is hindered by the acquirement of stable p-type materials, which makes it difficult to realize large array, low-power consumption UV focal plane array (FPA detector. Here, we provide a novel structure (Al/Poly(9,9-di-n-octylfuorenyl-2,7-diyl(PFO/ZnO/ITO to demonstrate the UV photovoltaic (PV response. A rather smooth surface (RMS roughness: 0.28 nm may be reached by solution process, which sheds light on the development of large-array, light-weight and low-cost UV FPA detectors.

Hybrid Organic-Inorganic Perovskite Photodetectors.

Science.gov (United States)

Tian, Wei; Zhou, Huanping; Li, Liang

2017-11-01

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet p—i—n Photodetectors

International Nuclear Information System (INIS)

Wang Guo-Sheng; Lu Hai; Xie Feng; Chen Dun-Jun; Ren Fang-Fang; Zhang Rong; Zheng You-Dou

2012-01-01

AlGaN-based back-illuminated solar-blind ultraviolet (UV) p—i—n photodetectors (PDs) with high quantum efficiency are fabricated on sapphire substrates. To improve the overall performance of the PD, a series of structural design considerations and growth procedures are implemented in the epitaxy process. A distinct wavelength-selective photo-response peak of the PD is obtained in the solar-blind region. When operating in photovoltaic mode, the PD exhibits a solar-blind/UV rejection ratio of up to 4 orders of magnitude and a peak responsivity of ∼113.5 mA/W at 270 nm, which corresponds to an external quantum efficiency of ∼52%. Under a reverse bias of −5 V, the PD shows a low dark current of ∼1.8 pA and an enhanced peak quantum efficiency of ∼64%. The thermal noise limited detectivity is estimated to be ∼ 3.3 × 10 13 cm·Hz 1/2 W −1

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guzmán, Álvaro, E-mail: guzman@die.upm.es; Yamamoto, Kenji; Ulloa, J. M.; Hierro, Adrian [Instituto de Sistemas Optoelectrónicos y Microtecnología y Dept. Ingeniería Electrónica, Universidad Politécnica de Madrid, ETSI de Telecomunicación, Avda. Complutense 30, 28040 Madrid (Spain); Llorens, J. M. [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain)

2015-07-06

InAs/GaAs{sub 1−x}Sb{sub x} Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Science.gov (United States)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing

2015-11-21

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing; Kuo, Chien-Ting; Huang, Jhih-Kai; Hsu, Shun-Chieh; Lee, Hsin-Ying; Kuo, Hao-Chung; Lee, Po-Tsung; Tsai, Yu-Lin; Hwang, Yi-Chia; Su, Chen-Feng; He, Jr-Hau; Lin, Shih-Yen; Cheng, Yuh-Jen; Lin, Chien-Chung

2015-01-01

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

Ultra-efficient all-printed organic photodetectors

Science.gov (United States)

Kielar, Marcin; Dhez, Olivier; Hirsch, Lionel

2016-09-01

Organic photodetectors are able to transform plastic into intelligent surfaces making our daily life easier, smarter and more productive. The key element for a sensor is to reduce the dark current density in order to boost the limit of detection. The energetic requirements in order to select materials for ultra-high performance organic photodetectors are presented with the following experimental results: a detectivity of 3.36 × 1013 Jones has been achieved with an extremely low dark current density of 0.32 nA cm-2 and a responsivity as high as 0.34 A W-1. Flexible devices are all made at lowtemperature and with solution-processed materials. Their stability under operation is also presented.

High-Performance solar-blind flexible Deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

KAUST Repository

Mitra, Somak

2018-03-31

High-performance deep ultraviolet (DUV) photodetectors operating at ambient conditions with < 280nm detection wavelengths are in high demand because of their potential applications in diverse fields. We demonstrate for the first time, high-performance flexible DUV photodetectors operating at ambient conditions based on quantum dots (QDs) synthesized by femtosecond-laser ablation in liquid (FLAL) technique. Our method is facile without complex chemical procedures, which allows large-scale cost-effective devices. This synthesis method is demonstrated to produce highly stable and reproducible ZnO QDs from zinc nitride target (Zn3N2) without any material degradation due to water and oxygen molecule species, allowing photodetectors operate at ambient conditions. Carbon-doped ZnO QD-based photodetector is capable of detecting efficiently in the DUV spectral region, down to 224nm, and exhibits high photo responsivity and stability. As fast response of DUV photodetector remains significant parameter for high-speed communication; we show fast-response QD-based DUV photodetector. Such surfactant-free synthesis by FLAL can lead to commercially available high-performance low-cost optoelectronic devices based on nanostructures for large scale applications.

Insight on quantum dot infrared photodetectors

International Nuclear Information System (INIS)

Rogalski, A

2009-01-01

The paper presents possible future developments of quantum dot infrared photodetectors (QDIPs). At the beginning the fundamental properties of QDIPs are summarized. Next, investigations of the performance of QDIPs, as compared to other types of infrared photodetectors, are presented. Theoretical predictions indicate that only type II superlattice photodiodes and QDIPs are expected to compete with HgCdTe photodiodes. QDIPs theoretically have several advantages compared with QWIPs including the normal incidence response, lower dark current, higher operating temperature, higher responsivity and detectivity. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. Comparison of QDIP performance with HgCdTe detectors gives evidence that the QDIP is suitable for high operation temperature. It can be expected that an improvement in technology and design of QDIP detectors will make it possible to achieve both high sensitivity and fast response useful for practical application at room temperature focal plane arrays. However, so far the QDIP devices have not fully demonstrated their potential advantages.

Self-Powered, Flexible, and Solution-Processable Perovskite Photodetector Based on Low-Cost Carbon Cloth.

Science.gov (United States)

Sun, Haoxuan; Lei, Tianyu; Tian, Wei; Cao, Fengren; Xiong, Jie; Li, Liang

2017-07-01

Flexible perovskite photodetectors are usually constructed on indium-tin-oxide-coated polymer substrates, which are expensive, fragile, and not resistant to high temperature. Herein, for the first time, a high-performance flexible perovskite photodetector is fabricated based on low-cost carbon cloth via a facile solution processable strategy. In this device, perovskite microcrystal and Spiro-OMeTAD (hole transporting material) blended film act as active materials for light detection, and carbon cloth serves as both a flexible substrate and a conductive electrode. The as-fabricated photodetector shows a broad spectrum response from ultraviolet to near-infrared light, high responsivity, fast response speed, long-term stability, and self-powered capability. Flexible devices show negligible degradation after several tens of bending cycles and at the extremely bending angle of 180°. This work promises a new technique to construct flexible, high-performance photodetectors with low cost and self-powered capability. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

International Nuclear Information System (INIS)

Lin, T.K.; Chang, S.J.; Su, Y.K.; Chiou, Y.Z.; Wang, C.K.; Chang, S.P.; Chang, C.M.; Tang, J.J.; Huang, B.R.

2005-01-01

Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 x 10 -13 W and the maximum normalized detectivity (D *) of 9.3 x 10 11 cm Hz 0.5 W -1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D * of the heteroepitaxial ZnSe photodetector were 2.9 x 10 -12 W and 2.44 x 10 11 cm Hz 0.5 W -1 , respectively

Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions.

Science.gov (United States)

Memaran, Shahriar; Pradhan, Nihar R; Lu, Zhengguang; Rhodes, Daniel; Ludwig, Jonathan; Zhou, Qiong; Ogunsolu, Omotola; Ajayan, Pulickel M; Smirnov, Dmitry; Fernández-Domínguez, Antonio I; García-Vidal, Francisco J; Balicas, Luis

2015-11-11

Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far points toward a strong interaction with light, which contrasts with the small photovoltaic efficiencies η ≤ 1% extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately 10 atomic layers of MoSe2 stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14%, with fill factors of ~70%. Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.

High performance photodetector based on 2D CH3NH3PbI3 perovskite nanosheets

International Nuclear Information System (INIS)

Li, Pengfei; Shivananju, B N; Li, Shaojuan; Bao, Qiaoliang; Zhang, Yupeng

2017-01-01

In this work, a high performance vertical-type photodetector based on two-dimensional (2D) CH 3 NH 3 PbI 3 perovskite nanosheets was fabricated. The low trap density of the perovskite nanosheets and their short carrier diffusion distance result in a significant performance enhancement of the perovskite-based photodetector. The photoresponsivity of this vertical-type photodetector is as high as 36 mA W −1 at visible wavelength, which is much better than traditional perovskite photodetectors (0.34 mA W −1 ). Compared with traditional planar-type perovskite-based photodetectors, this vertical-type photodetector also shows the advantages of low-voltage operation and large responsivity. These results may pave the way for exploiting high performance perovskite-based photodetectors with an ingenious device design. (paper)

Modeling the frequency response of photovoltaic inverters

NARCIS (Netherlands)

Ernauli Christine Aprilia, A.; Cuk, V.; Cobben, J.F.G.; Ribeiro, P.F.; Kling, W.L.

2012-01-01

The increased presence of photovoltaic (PV) systems inevitably affects the power quality in the grid. This new reality demands grid power quality studies involving PV inverters. This paper proposes several frequency response models in the form of equivalent circuits. Models are based on laboratory

Perovskite photodetectors with both visible-infrared dual-mode response and super-narrowband characteristics towards photo-communication encryption application.

Science.gov (United States)

Wu, Ye; Li, Xiaoming; Wei, Yi; Gu, Yu; Zeng, Haibo

2017-12-21

Photo-communication has attracted great attention because of the rapid development of wireless information transmission technology. However, it is still a great challenge in cryptography communications, where it is greatly weakened by the openness of the light channels. Here, visible-infrared dual-mode narrowband perovskite photodetectors were fabricated and a new photo-communication encryption technique was proposed. For the first time, highly narrowband and two-photon absorption (TPA) resultant photoresponses within a single photodetector are demonstrated. The full width at half maximum (FWHM) of the photoresponse is as narrow as 13.6 nm in the visible range, which is superior to state-of-the-art narrowband photodetectors. Furthermore, these two merits of narrowband and TPA characteristics are utilized to encrypt the photo-communication based on the above photodetectors. When sending information and noise signals with 532 and 442 nm laser light simultaneously, the perovskite photodetectors only receive the main information, while the commercial Si photodetector responds to both lights, losing the main information completely. The final data are determined by the secret key through the TPA process as preset. Such narrowband and TPA detection abilities endow the perovskite photodetectors with great potential in future security communication and also provide new opportunities and platforms for encryption techniques.

Printed photodetectors

International Nuclear Information System (INIS)

Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

2015-01-01

Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems. (paper)

Printed photodetectors

Science.gov (United States)

Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

2015-10-01

Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems.

Photovoltaic spectral responsivity measurements

Energy Technology Data Exchange (ETDEWEB)

Emery, K.; Dunlavy, D.; Field, H.; Moriarty, T. [National Renewable Energy Lab., Golden, CO (United States)

1998-09-01

This paper discusses the various elemental random and nonrandom error sources in typical spectral responsivity measurement systems. The authors focus specifically on the filter and grating monochrometer-based spectral responsivity measurement systems used by the Photovoltaic (PV) performance characterization team at NREL. A variety of subtle measurement errors can occur that arise from a finite photo-current response time, bandwidth of the monochromatic light, waveform of the monochromatic light, and spatial uniformity of the monochromatic and bias lights; the errors depend on the light source, PV technology, and measurement system. The quantum efficiency can be a function of he voltage bias, light bias level, and, for some structures, the spectral content of the bias light or location on the PV device. This paper compares the advantages and problems associated with semiconductor-detector-based calibrations and pyroelectric-detector-based calibrations. Different current-to-voltage conversion and ac photo-current detection strategies employed at NREL are compared and contrasted.

MgNiO-based metal-semiconductor- metal ultraviolet photodetector

International Nuclear Information System (INIS)

Zhao Yanmin; Zhang Jiying; Jiang Dayong; Shan Chongxin; Zhang Zhenzhong; Yao Bin; Zhao Dongxu; Shen Dezhen

2009-01-01

In this study, we report the growth of Mg x Ni 1-x O thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340 nm to 260 nm with increase in the Mg content from 0.2 to 0.8. A metal-semiconductor-metal structured photodetector is fabricated from the Mg 0.2 Ni 0.8 O film. At a bias of 5 V, the dark current of the photodetector is about 70 nA. The maximum responsivity is about 147.3 μA W -1 at 320 nm. In addition, the ultraviolet (UV) (320 nm) to visible (400 nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that Mg x Ni 1-x O is a potential candidate for application in UV photodetectors. (fast track communication)

High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions

KAUST Repository

Alwadai, Norah Mohammed Mosfer

2017-10-17

A high-performance vertically injected broadband UV-to-IR photodetector based on Gd-doped ZnO nanorods (NRs)/CH3NH3PbI3 perovskite heterojunction was fabricated on metal substrates. Our perovskite-based photodetector is sensitive to a broad spectral range, from ultraviolet to infrared light region (λ = 250–1357 nm). Such structure leads to a high photoresponsivity of 28 and 0.22 A/W, for white light and IR illumination, respectively, with high detectivity values of 1.1 × 1012 and 9.3 × 109 Jones. Optical characterizations demonstrate that the IR detection is due to intraband transition in the perovskite material. Metal substrate boosts carrier injection, resulting in higher responsivity compared to the conventional devices grown on glass, whereas the presence of Gd increases the ZnO NRs performance. For the first time, the perovskite-based photodetector is demonstrated to extend its detection capability to IR (>1000 nm) with high room temperature responsivity across the detected spectrum, leading to a high-performance ingenious cost-effective UV-to-IR broadband photodetector design for large-scale applications.

MgNiO-based metal-semiconductor- metal ultraviolet photodetector

Energy Technology Data Exchange (ETDEWEB)

Zhao Yanmin; Zhang Jiying; Jiang Dayong; Shan Chongxin; Zhang Zhenzhong; Yao Bin; Zhao Dongxu; Shen Dezhen, E-mail: zhangjy53@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2009-05-07

In this study, we report the growth of Mg{sub x}Ni{sub 1-x}O thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340 nm to 260 nm with increase in the Mg content from 0.2 to 0.8. A metal-semiconductor-metal structured photodetector is fabricated from the Mg{sub 0.2}Ni{sub 0.8}O film. At a bias of 5 V, the dark current of the photodetector is about 70 nA. The maximum responsivity is about 147.3 {mu}A W{sup -1} at 320 nm. In addition, the ultraviolet (UV) (320 nm) to visible (400 nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that Mg{sub x}Ni{sub 1-x}O is a potential candidate for application in UV photodetectors. (fast track communication)

Photodetector of ultra-violet radiation

International Nuclear Information System (INIS)

Dorogan, V.; Vieru, T.; Coseac, V.; Chirita, F.

1999-01-01

The invention relates to photodetectors on the semiconductors base, in particular, to photodetectors of ultra-violet radiation and can be used in the optoelectronics systems for determining the intensity and dose of ultraviolet radiation emitted by the Sun and other sources. In the structure of the photodetector of ultraviolet radiation with a superficial potential barrier formed of semiconductors A 3 B 5 with the prohibited power width Eg 1 , solid solutions thereof with the prohibited power width Eg 2 and SnO 2 or ITO, in the semiconductors A 3 B 5 at a surface distance less than the absorption length of the visible radiation it is formed an isotype heterojunction between the semiconductors A 3 B 5 and solid solutions thereof with the prohibited power width Eg 2 > Eg 1 . The technical result consists in manufacturing of a photodetector sensitive solely to the ultraviolet radiation

Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction.

Science.gov (United States)

Liu, Yu-Lun; Yu, Chen-Chieh; Lin, Keng-Te; Yang, Tai-Chi; Wang, En-Yun; Chen, Hsuen-Li; Chen, Li-Chyong; Chen, Kuei-Hsien

2015-05-26

In this study, we combine graphene with gold oxide (AuOx), a transparent and high-work-function electrode material, to achieve a high-efficient, low-bias, large-area, flexible, transparent, broadband, and bifacial-operable photodetector. The photodetector operates through hot electrons being generated in the graphene and charge separation occurring at the AuOx-graphene heterojunction. The large-area graphene covering the AuOx electrode efficiently prevented reduction of its surface; it also acted as a square-centimeter-scale active area for light harvesting and photodetection. Our graphene/AuOx photodetector displays high responsivity under low-intensity light illumination, demonstrating picowatt sensitivity in the ultraviolet regime and nanowatt sensitivity in the infrared regime for optical telecommunication. In addition, this photodetector not only exhibited broadband (from UV to IR) high responsivity-3300 A W(-1) at 310 nm (UV), 58 A W(-1) at 500 nm (visible), and 9 A W(-1) at 1550 nm (IR)-but also required only a low applied bias (0.1 V). The hot-carrier-assisted photoresponse was excellent, especially in the short-wavelength regime. In addition, the graphene/AuOx photodetector exhibited great flexibility and stability. Moreover, such vertical heterojunction-based graphene/AuOx photodetectors should be compatible with other transparent optoelectronic devices, suggesting applications in flexible and wearable optoelectronic technologies.

High performance organic ultraviolet photodetectors based on m-MTDATA

Science.gov (United States)

Zhao, Zhongli; Bai, Xiaofeng; Shang, Yubin; Yang, Jikai; Li, Baozeng; Song, De

2018-02-01

We demonstrate highly efficient organic ultraviolet photodetectors using 4,4',4'' -tris[3-methyl-pheny(phenyl) amino] triphenylamine (m-MTDATA) and aluminum Tris(8-Hydroxyquinolinate) Synonym Alq3). The optimized photodetector delivers a photocurrent of 1.40 mA/cm2 at10 V, corresponding to a response of 127 mA/W under an illumination of 375 nm UV light irradiation with an intensity of 10.5 mW/cm2 and a detectivity of 2.15×1011 cm Hz1/2 /W. The high response is attributed to the larger band offset at m-MTDATA/ Alq3 heterojunction, the suppression of radiative decay of m-MTDATA and efficient electron transfer from m-MTDATA to Alq3. The working mechanism of harvesting high performance is also discussed in detail.

Photodetector based on carbon nanotubes

Science.gov (United States)

Pavlov, A.; Kitsyuk, E.; Ryazanov, R.; Timoshenkov, V.; Adamov, Y.

2015-09-01

Photodetector based on carbon nanotubes (CNT) was investigated. Sensors were done on quartz and silicon susbtrate. Samples of photodetectors sensors were produced by planar technology. This technology included deposition of first metal layer (Al), lithography for pads formation, etching, and formation of local catalyst area by inverse lithography. Vertically-aligned multi-wall carbon nanotubes were directly synthesized on substrate by PECVD method. I-V analysis and spectrum sensitivity of photodetector were investigated for 0.4 μm - 1.2 μm wavelength. Resistivity of CNT layers over temperature was detected in the range of -20°C to 100°C.

Enhanced Performance of a Self-Powered Organic/Inorganic Photodetector by Pyro-Phototronic and Piezo-Phototronic Effects.

Science.gov (United States)

Peng, Wenbo; Wang, Xingfu; Yu, Ruomeng; Dai, Yejing; Zou, Haiyang; Wang, Aurelia C; He, Yongning; Wang, Zhong Lin

2017-06-01

Self-powered photodetectors (PDs) have long been realized by utilizing photovoltaic effect and their performances can be effectively enhanced by introducing the piezo-phototronic effect. Recently, a novel pyro-phototronic effect is invented as an alternative approach for performance enhancement of self-powered PDs. Here, a self-powered organic/inorganic PD is demonstrated and the influences of externally applied strain on the pyro-phototronic and the photovoltaic effects are thoroughly investigated. Under 325 nm 2.30 mW cm -2 UV illumination and at a -0.45% compressive strain, the PD's photocurrent is dramatically enhanced from ≈14.5 to ≈103 nA by combining the pyro-phototronic and piezo-phototronic effects together, showing a significant improvement of over 600%. Theoretical simulations have been carried out via the finite element method to propose the underlying working mechanism. Moreover, the pyro-phototronic effect can be introduced by applying a -0.45% compressive strain to greatly enhance the PD's response to 442 nm illumination, including photocurrent, rise time, and fall time. This work provides in-depth understandings about the pyro-phototronic and the piezo-phototronic effects on the performances of self-powered PD to light sources with different wavelengths and indicates huge potential of these two effects in optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.

Science.gov (United States)

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Kim, Taek Sung; Shim, Kyu-Hwan; Hong, Hyobong; Choi, Chel-Jong

2015-10-01

We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.

Science.gov (United States)

Shen, Jun; Liu, Xiangzhi; Song, Xuefen; Li, Xinming; Wang, Jun; Zhou, Quan; Luo, Shi; Feng, Wenlin; Wei, Xingzhan; Lu, Shirong; Feng, Shuanglong; Du, Chunlei; Wang, Yuefeng; Shi, Haofei; Wei, Dapeng

2017-05-11

Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz -1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 10 13 cm Hz 1/2 W -1 and 2.27 × 10 14 cm Hz 1/2 W -1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 10 7 , time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W -1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

Engineering the temporal response of photoconductive photodetectors via selective introduction of surface trap states.

Science.gov (United States)

Konstantatos, Gerasimos; Levina, Larissa; Fischer, Armin; Sargent, Edward H

2008-05-01

Photoconductive photodetectors fabricated using simple solution-processing have recently been shown to exhibit high gains (>1000) and outstanding sensitivities ( D* > 10(13) Jones). One ostensible disadvantage of exploiting photoconductive gain is that the temporal response is limited by the release of carriers from trap states. Here we show that it is possible to introduce specific chemical species onto the surfaces of colloidal quantum dots to produce only a single, desired trap state having a carefully selected lifetime. In this way we demonstrate a device that exhibits an attractive photoconductive gain (>10) combined with a response time ( approximately 25 ms) useful in imaging. We achieve this by preserving a single surface species, lead sulfite, while eliminating lead sulfate and lead carboxylate. In doing so we preserve the outstanding sensitivity of these devices, achieving a specific detectivity of 10(12) Jones in the visible, while generating a temporal response suited to imaging applications.

Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

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Batool Eneaze B. Al-Jumaili

2016-01-01

Full Text Available Achieving a cheap and ultrafast metal-semiconductor-metal (MSM photodetector (PD for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi based MSM PD with platinum (Pt contact electrodes. Such NPSi samples are grown from n-type Si (100 wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311 lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the I-V characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.

Modeling of the photodetector based on the multilayer graphene nanoribbons

International Nuclear Information System (INIS)

Liu, Haiyue; Niu, Yanxiong; Yin, Yiheng; Liu, Shuai

2016-01-01

Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for the photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on In_xGa_xAs in room temperature.

Modeling of the photodetector based on the multilayer graphene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Liu, Haiyue [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Niu, Yanxiong, E-mail: niuyx@buaa.edu.cn [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Precision Opto-mechatronics Technology Key Laboratory of Education Ministry, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Yin, Yiheng [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Liu, Shuai [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Precision Opto-mechatronics Technology Key Laboratory of Education Ministry, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

2016-07-15

Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for the photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on In{sub x}Ga{sub x}As in room temperature.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

Science.gov (United States)

Miao, Jinshui; Hu, Weida; Guo, Nan; Lu, Zhenyu; Liu, Xingqiang; Liao, Lei; Chen, Pingping; Jiang, Tao; Wu, Shiwei; Ho, Johnny C; Wang, Lin; Chen, Xiaoshuang; Lu, Wei

2015-02-25

Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Simulation of optimum parameters for GaN MSM UV photodetector

Energy Technology Data Exchange (ETDEWEB)

Alhelfi, Mohanad A., E-mail: mhad12344@gmail.com; Ahmed, Naser M., E-mail: nas-tiji@yahoo.com; Hashim, M. R., E-mail: roslan@usm.my; Hassan, Z., E-mail: zai@usm.my [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia 11800 Penang (Malaysia); Al-Rawi, Ali Amer, E-mail: aliamer@unimap.edu.my [School of Computer and Communication Eng. 3st Floor, Pauh Putra Main Campus 02600 Arau, Perlis Malaysia (Malaysia)

2016-07-06

In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

Simulation of high SNR photodetector with L-C coupling and transimpedance amplifier circuit and its verification

Science.gov (United States)

Wang, Shaofeng; Xiang, Xiao; Zhou, Conghua; Zhai, Yiwei; Quan, Runai; Wang, Mengmeng; Hou, Feiyan; Zhang, Shougang; Dong, Ruifang; Liu, Tao

2017-01-01

In this paper, a model for simulating the optical response and noise performances of photodetectors with L-C coupling and transimpedance amplification circuit is presented. To verify the simulation, two kinds of photodetectors, which are based on the same printed-circuit-board (PCB) designing and PIN photodiode but different operational amplifiers, are developed and experimentally investigated. Through the comparisons between the numerical simulation results and the experimentally obtained data, excellent agreements are achieved, which show that the model provides a highly efficient guide for the development of a high signal to noise ratio photodetector. Furthermore, the parasite capacitances on the developed PCB, which are always hardly measured but play a non-negligible influence on the photodetectors' performances, are estimated.

Graphene quantum interference photodetector

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Mahbub Alam

2015-03-01

Full Text Available In this work, a graphene quantum interference (QI photodetector was simulated in two regimes of operation. The structure consists of a graphene nanoribbon, Mach–Zehnder interferometer (MZI, which exhibits a strongly resonant transmission of electrons of specific energies. In the first regime of operation (that of a linear photodetector, low intensity light couples two resonant energy levels, resulting in scattering and differential transmission of current with an external quantum efficiency of up to 5.2%. In the second regime of operation, full current switching is caused by the phase decoherence of the current due to a strong photon flux in one or both of the interferometer arms in the same MZI structure. Graphene QI photodetectors have several distinct advantages: they are of very small size, they do not require p- and n-doped regions, and they exhibit a high external quantum efficiency.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

Science.gov (United States)

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

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Xiong Gong

2010-07-01

Full Text Available Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells.

Science.gov (United States)

Lai, Jian-Jhong; Li, Yu-Hsun; Feng, Bo-Rui; Tang, Shiow-Jing; Jian, Wen-Bin; Fu, Chuan-Min; Chen, Jiun-Tai; Wang, Xu; Lee, Pooi See

2017-09-27

Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n- and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.

Emerging terahertz photodetectors based on two-dimensional materials

Science.gov (United States)

Yang, Jie; Qin, Hua; Zhang, Kai

2018-01-01

Inspired by the innovations in photonics and nanotechnology, the remarkable properties of two-dimensional (2D) materials have renewed interest for the development of terahertz (THz) photodetectors. The versatility of these materials enables ultrafast and ultrasensitive photodetection of THz radiation at room temperature. The atomically thin characteristic together with van der Waals interactions among the layers make it easy to scaling down and integrate with other 2D materials based devices, as well as silicon chips. Efforts have increased fast in the past decade in developing proof-of-concept and the further prospective THz photodetectors based on 2D materials. Here, the recent progress on the exploring of THz photodetectors based on 2D materials is reviewed. We summarized the THz photodetectors under different physical mechanism and introduced the state-of-the-art THz photodetectors based on various promising 2D materials, such as graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP) and topological insulators (TIs). A brief discussion on the remaining challenges and a perspective of the 2D materials based THz photodetectors are also given.

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

Energy Technology Data Exchange (ETDEWEB)

Daranciang, Dan

2012-02-15

We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

International Nuclear Information System (INIS)

Daranciang, Dan

2012-01-01

We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

High sensitivity, fast speed and self-powered ultraviolet photodetectors based on ZnO micro/nanowire networks

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Zhiming Bai

2014-02-01

Full Text Available Ultraviolet (UV photodetectors (PDs based on ZnO micro/nanowire (MNW networks with Pt contacts have been fabricated on glass substrates. The PDs exhibited a high photosensitivity (5×103 for 365 nm UV light with a fast recovery time (0.2 s at a reverse bias voltage of 2 V. The light induced modulation of Schottky barrier and MNW–MNW junction barrier was employed to account for the results. It was also observed that the PD had a high on–off ratio of 800 without external bias. The photovoltaic effect was proposed to explain the self-powered phenomenon.

Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

Energy Technology Data Exchange (ETDEWEB)

Babichev, A. V., E-mail: A.Babichev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zhang, H.; Guan, N. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Egorov, A. Yu. [ITMO University (Russian Federation); Julien, F. H.; Messanvi, A. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Durand, C.; Eymery, J. [University Grenoble Alpes (France); Tchernycheva, M. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France)

2016-08-15

We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In{sub 0.18}Ga{sub 0.82}N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.

High-speed photodetectors in optical communication system

Science.gov (United States)

Zhao, Zeping; Liu, Jianguo; Liu, Yu; Zhu, Ninghua

2017-12-01

This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems. Project supported by the Preeminence Youth Fund of China (No. 61625504).

Solution-processed nanocrystalline PbS on paper substrate with pencil traced electrodes as visible photodetector

Science.gov (United States)

Vankhade, Dhaval; Chaudhuri, Tapas K.

2018-04-01

Paper-based PbS photodetector sensitive in the visible spectrum is reported. Nanocrystalline PbS-on-paper devices are fabricated by a spin coating method on white paper (300 GSM) from a methanolic precursor solution. Photodetector cells of gap 0.2 cm and length 0.5 cm are prepared by drawing contacts by monolithic cretacolor 8B pencil. X-ray diffractometer confirmed the deposition of nanocrystalline PbS films with 14 nm crystallites. The SEM illustrated the uniform coating of nanocrystalline PbS thin films on cellulose fibres of papers having an average thickness of fibres are 10 µm. The linear J-V characteristics in dark and under illumination of light using graphite trace on nanocrystalline PbS-on-paper shows good ohmic contact. The resistivity of pencil trace is 30 Ω.cm. Spectral response measurements of photodetector reveal the excellent sensitivity from 400 to 700 nm with a peak at 550 nm. The best responsivity anddetectivity are 0.7 A/W and 1.4 × 1012 Jones respectively. These paper-based low-cost photodetectors devices have fast photoresponse and recovery without baseline deviation.

The controlled growth of graphene nanowalls on Si for Schottky photodetector

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Quan Zhou

2017-12-01

Full Text Available Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

Science.gov (United States)

Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

2018-02-01

In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

Vertical Ge photodetector base on InP taper waveguide

Science.gov (United States)

Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

2018-06-01

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance

Science.gov (United States)

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-01

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV–vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na2SO4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm‑2, while an enhanced responsivity (1.8 μA W‑1) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.

Plasmonic-Resonant Bowtie Antenna for Carbon Nanotube Photodetectors

Directory of Open Access Journals (Sweden)

Hongzhi Chen

2012-01-01

Full Text Available The design of bowtie antennas for carbon nanotube (CNT photodetectors has been investigated. CNT photodetectors have shown outstanding performance by using CNT as sensing element. However, detection wavelength is much larger than the diameter of the CNT, resulting in small fill factor. Bowtie antenna can confine light into a subwavelength volume based on plasmonic resonance, thus integrating a bowtie antenna to CNT photodetectors can highly improve photoresponse of the detectors. The electric field enhancement of bowtie antennas was calculated using the device geometry by considering fabrication difficulties and photodetector structure. It is shown that the electric field intensity enhancement increased exponentially with distance reduction between the CNT photodetector to the antenna. A redshift of the peak resonance wavelength is predicted due to the increase of tip angles of the bowtie antennas. Experimental results showed that photocurrent enhancement agreed well with theoretical calculations. Bowtie antennas may find wide applications in nanoscale photonic sensors.

Fabrication of high responsivity deep UV photo-detector based on Na doped ZnO nanocolumns

Science.gov (United States)

Agrawal, Jitesh; Dixit, Tejendra; Palani, I. A.; Ramachandra Rao, M. S.; Singh, Vipul

2018-05-01

We report a variety of the hydrothermally synthesized ZnO nanostructures with a significant suppression in defect-related emission and huge enhancement in the photo-current to the dark current ratio (approximately six orders of magnitude) upon UV light illumination. Interestingly, the photo-detector shows lower dark current of 1.6 nA with high responsivity of 507 A W‑1 at 254 nm. Here, a systematic analysis of the growth process as well as the physical, chemical and electrical properties of as-grown ZnO nanostructures has been performed. We have utilized the duo effect of both the inorganic (KMnO4) and organic (Na3C6H5O7) additives, which has facilitated the precise tuning of the morphology and intrinsic defects in nanostructures that have made an impact on the photo-responsivity, photoluminescence (PL) and adhesivity of the film on to the underlying substrate. PL analysis of as-grown ZnO nanostructures has suggested 11 times improvement in the near band emission (NBE) to defect level emission (DLE) ratio. Interestingly, thermal annealing of the samples has shown a dramatic change in the morphology with significant improvement in the crystallinity. Notably, the band gap was observed to be modulated from 3.3 eV to 3.1 eV after annealing. In addition to UV photo-detector based applications, the work presented here has provided a subtle solution towards the rectification of various problems pertaining to hydrothermal processes like poor adhesivity, feeble UV emission and problem in precise tuning of the morphology along with the bandgap in one go. Therefore, these investigations assume critical significance towards the development of next-generation optoelectronic devices.

Measurement of the dynamic response of low-gain solid-state photodetector under weak pulse illumination

CERN Document Server

Clément, D; Morel, Christian

2000-01-01

This paper presents the development of a Tunable Light Pulse Generator built to measure the quantum efficiency of photodetectors under continuous or pulsed (20 ns FWHM) illumination as a function of wavelength in the Visible-UV region. For this purpose, a miniature Hamamatsu R5600U-04 PMT with low cathode resistivity can be used as reference detector. Dedicated electronics was developed in order to measure simultaneously the cathode and anode currents. This should allow to determine precisely the gain as a function of the high voltage applied to the PMT. Preliminary measurements using the TLPG do not demonstrate significant differences between the dynamic (approx 10 000 photons) and DC responses of PIN photodiodes down to 300 nm.

Quantum dot infrared photodetectors based on indium phosphide

International Nuclear Information System (INIS)

Gebhard, T.

2011-01-01

The subject of this work is a systematic study of quantum dot infrared photodetectors based on indium-phosphide substrate by means of various spectroscopic and electronic measurement methods in order to understand the physical and technological processes. This enables a concise definition of strategies in order to realize next generation devices in this material system and to gain overall progress in the research field of quantum dot infrared photodetectors. The interpretation of the experimental results is supported by analytical and numerical simulations. The samples, grown by collaboration partners, were characterized using differential transmission and fast Fourier transform infrared spectroscopy, with a special emphasis on the latter one. Therefore, samples both in wedged waveguide geometry and samples with gold coated mesa structures have been processed. A large part of the discussion is dedicated to the current voltage characteristic of the devices, due to its large importance for device optimization, i.e. the reduction of the dark current plays a crucial role in the research field of high temperature infrared photon-detection. Further, results of photoluminescence measurements, performed by collaboration partners, have been used in order to attain a more complete picture of the samples' electronic band structure and in order to obtain complementary information with respect to other measurement methods applied within the experimental work and the simulation of the structures. In agreement to the simulations, a photocurrent response was observed at 6 and at 12 μm up to a temperature of 80 K, depending on the samples' design. The principle of parameter scaling was applied to the samples, in order to assign physical effects either to details in the samples' design or to technological quality aspects, i.e. the doping level and the thickness of the capping layer was varied. In addition to that a quantum well was introduced within a series of samples in order to

Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Science.gov (United States)

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

2018-06-01

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

Science.gov (United States)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Peak response wavelengths of p- and n-type InxGa1-xAs-InP quantum well infrared photodetectors

International Nuclear Information System (INIS)

Fu, Y.; Willander, M.; Sengupta, D.K.

2005-01-01

p- and n-type In x Ga 1-x As-InP quantum wells are suitable for multi-color infrared photodetector applications in atmospheric windows due to improved barrier quality and carrier-transport properties. We apply the k.p method to study the energy band structures and optical transition properties, which show that the peak response wavelengths of p- and n-type In x Ga 1-x As-InP quantum well infrared photodetectors (QWIPs) are determined not only by the energy distance from the ground sublevels in the quantum well to the energy band edges of extended states, but also by the characteristics of the extended states. The optical phonon scattering process converts the broad absorption spectrum of the p-QWIP from 0 to 16 μm into a short-wavelength spectrum centered at 4.5 μm. The transport of electrons in the extended states of the n-QWIP is characterized by running wave boundary conditions, resulting in a theoretically optimal absorption rate by a 8-nm-thick In 0.53 Ga 0.47 As quantum well. Moreover, a conduction-band offset of 0.5 for an In x Ga 1-x As-InP (x=0.53) heterostructure gives the best data fitting of theoretical and experimental response peaks, whereas 0.55 is generally recommended in the literature. (orig.)

Photodetector of ultraviolet radiation

International Nuclear Information System (INIS)

Dorogan, V.; Branzari, V.; Vieru, T.; Manole, M.; Canter, V.

2000-01-01

The invention relates to photodetectors on base of semiconductors of ultraviolet radiation and may be used in optoelectronic system for determining the intensity and the dose of ultraviolet radiation emitted by the Sun or other sources. Summary of the invention consists in the fact that in the photodetector of ultraviolet radiation the superficial potential barrier is divided into two identical elements, electrically isolated each of the other, one of them being covered with a layer of transparent material for visible and infrared radiation and absorption the ultra violet radiation. The technical result consists in mutual compensation of visible and infrared components of the radiation spectrum

Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

Science.gov (United States)

Balram, Krishna C; Audet, Ross M; Miller, David A B

2013-04-22

We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping.

Science.gov (United States)

Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai; Nam, Hongsuk; Guo, L Jay; Meyhofer, Edgar; Liang, Xiaogan

2014-05-27

Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

Phase-Engineered Type-II Multimetal-Selenide Heterostructures toward Low-Power Consumption, Flexible, Transparent, and Wide-Spectrum Photoresponse Photodetectors.

Science.gov (United States)

Chen, Yu-Ze; Wang, Sheng-Wen; Su, Teng-Yu; Lee, Shao-Hsin; Chen, Chia-Wei; Yang, Chen-Hua; Wang, Kuangye; Kuo, Hao-Chung; Chueh, Yu-Lun

2018-05-01

Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W -1 and an on/off current ratio of up to 10 2 . Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly efficient tandem polymer solar cells with a photovoltaic response in the visible light range.

Science.gov (United States)

Zheng, Zhong; Zhang, Shaoqing; Zhang, Maojie; Zhao, Kang; Ye, Long; Chen, Yu; Yang, Bei; Hou, Jianhui

2015-02-18

Highly efficient polymer solar cells with a tandem structure are fabricated by using two excellent photovoltaic polymers and a highly transparent intermediate recombination layer. Power conversion -efficiencies over 10% can be realized with a photovoltaic response within 800 nm. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced Graphene Photodetector with Fractal Metasurface

DEFF Research Database (Denmark)

Fan, Jieran; Wang, Di; DeVault, Clayton

2016-01-01

We designed and fabricated a broadband, polarization-independent photodetector by integrating graphene with a fractal Cayley tree metasurface. Our measurements show an almost uniform, tenfold enhancement in photocurrent generation due to the fractal metasurface structure.......We designed and fabricated a broadband, polarization-independent photodetector by integrating graphene with a fractal Cayley tree metasurface. Our measurements show an almost uniform, tenfold enhancement in photocurrent generation due to the fractal metasurface structure....

P3HT-graphene bilayer electrode for Schottky junction photodetectors

Science.gov (United States)

Aydın, H.; Kalkan, S. B.; Varlikli, C.; Çelebi, C.

2018-04-01

We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.

Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

Science.gov (United States)

Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

2017-02-08

We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

Zero-biased solar-blind photodetector based on ZnBeMgO/Si heterojunction

International Nuclear Information System (INIS)

Yang, C; Li, X M; Yu, W D; Gao, X D; Cao, X; Li, Y Z

2009-01-01

An n-type Zn 1-x-y Be x Mg y O thin film was deposited on a p-type Si substrate by pulsed laser deposition to obtain a solar-blind photodetector. The spectral response characteristic with a cutoff wavelength of 280 nm was demonstrated to realize the photodetection of the solar-blind wave zone. The responsivity of the device was improved by inserting an Al-doped ZnO (AZO) contact layer, which was expected to enhance the carrier collection efficiency significantly. Correspondingly, the peak responsivity was improved from 0.003 to 0.11 A W -1 at zero bias, and a high external quantum efficiency of 53% at 270 nm was achieved. The fast rise time reached 20 ns. This work demonstrated the possibility of a wurtzite ZnO based oxide system to realize high performance zero-biased solar-blind photodetectors. (fast track communication)

Synthesis and characterization of NaSbS2 thin film for potential photodetector and photovoltaic application

Institute of Scientific and Technical Information of China (English)

Zhe Xia; Jiang Tang; Feng-Xin Yu; Shuai-Cheng Lu; Ding-Jiang Xue; Yi-Su He; Bo Yang; Chong Wang; Rui-Qing Ding; Jie Zhong

2017-01-01

Solution-processed semiconductors such as perovskite compounds have attracted tremendous attention to photovoltaic research due to the significantly higher energy conversion efficiencies and lower processing costs.However,concerns over stability and the toxicity on lead in CH3NH3PbI3 create the need for still easily-accessible but more stable and environmentally friendly materials.Here,we present NaSbS2 as a non-toxic,earth-abundant promising material consisting of densely packed (1/∞) [SbS2-] polymeric chains and sodium ions.The ionic nature makes it sharing the similar dissolution superiority with perovskite,providing great potential for low-cost and large-scale fabrication.Phase pure NaSbS2 thin film was successfully fabricated using spray-pyrolysis method,and its photovoltaic relevant material,optical and electrical properties were carefully studied.Finally,a prototype NaSbS2-based thinfilm solar cell has been successfully demonstrated,yielding a power conversion efficiency of 0.13％.The systematic experimental and theoretical investigations,combined with proof-of-principle device results,indicate that NaSbS2 is indeed very promising for photovoltaic application.

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Naderi, N., E-mail: naderi.phd@gmail.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2013-03-05

photodetectors on annealed substrates showed enhanced sensitivity and responsivity to ultraviolet radiation.

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

International Nuclear Information System (INIS)

Naderi, N.; Hashim, M.R.

2013-01-01

photodetectors on annealed substrates showed enhanced sensitivity and responsivity to ultraviolet radiation

Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

Science.gov (United States)

Xu, Jinyou; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2017-11-08

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm 2 ) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10 8 , 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

Low Voltage Low Light Imager and Photodetector

Science.gov (United States)

Nikzad, Shouleh (Inventor); Martin, Chris (Inventor); Hoenk, Michael E. (Inventor)

2013-01-01

Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.

Microchannel plate photodetectors

International Nuclear Information System (INIS)

Majka, R.

1977-01-01

A review is given the status of development work on photodetectors using microchannel plates (MCP) as the electron gain element. Projections are made and opinions are presented on what might be available in the next few years. Several uses for these devices at ISABELLE are mentioned

Bolometric-Effect-Based Wavelength-Selective Photodetectors Using Sorted Single Chirality Carbon Nanotubes

Science.gov (United States)

Zhang, Suoming; Cai, Le; Wang, Tongyu; Shi, Rongmei; Miao, Jinshui; Wei, Li; Chen, Yuan; Sepúlveda, Nelson; Wang, Chuan

2015-01-01

This paper exploits the chirality-dependent optical properties of single-wall carbon nanotubes for applications in wavelength-selective photodetectors. We demonstrate that thin-film transistors made with networks of carbon nanotubes work effectively as light sensors under laser illumination. Such photoresponse was attributed to photothermal effect instead of photogenerated carriers and the conclusion is further supported by temperature measurements. Additionally, by using different types of carbon nanotubes, including a single chirality (9,8) nanotube, the devices exhibit wavelength-selective response, which coincides well with the absorption spectra of the corresponding carbon nanotubes. This is one of the first reports of controllable and wavelength-selective bolometric photoresponse in macroscale assemblies of chirality-sorted carbon nanotubes. The results presented here provide a viable route for achieving bolometric-effect-based photodetectors with programmable response spanning from visible to near-infrared by using carbon nanotubes with pre-selected chiralities. PMID:26643777

Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction.

Science.gov (United States)

Guo, Daoyou; Liu, Han; Li, Peigang; Wu, Zhenping; Wang, Shunli; Cui, Can; Li, Chaorong; Tang, Weihua

2017-01-18

A solar-blind photodetector based on β-Ga 2 O 3 /NSTO (NSTO = Nb:SrTiO 3 ) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the β-Ga 2 O 3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τ d = 0.07 s) and the ratio I photo /I dark ≈ 20 under 254 nm light illumination with a light intensity of 45 μW/cm 2 . Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of β-Ga 2 O 3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 μW/cm 2 of 254 nm light illumination, the photodetector exhibits a responsivity R λ of 43.31 A/W and an external quantum efficiency of 2.1 × 10 4 %. The photo-to-electric conversion mechanism in the β-Ga 2 O 3 /NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on β-Ga 2 O 3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

Science.gov (United States)

Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

2015-07-22

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

Fast and Sensitive Solution-Processed Visible-Blind Perovskite UV Photodetectors.

Science.gov (United States)

Adinolfi, Valerio; Ouellette, Olivier; Saidaminov, Makhsud I; Walters, Grant; Abdelhady, Ahmed L; Bakr, Osman M; Sargent, Edward H

2016-09-01

The first visible-blind UV photodetector based on MAPbCl3 integrated on a substrate exhibits excellent performance, with responsivities reaching 18 A W(-1) below 400 nm and imaging-compatible response times of 1 ms. This is achieved by using substrate-integrated single crystals, thus overcoming the severe limitations affecting thin films and offering a new application of efficient, solution-processed, visible-transparent perovskite optoelectronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars

Energy Technology Data Exchange (ETDEWEB)

Ajiki, Yoshiharu, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp [Micromachine Center, 67 Kanda Sakumagashi, Chiyoda-ku, Tokyo 100-0026 (Japan); Kan, Tetsuo [Department of Mechano-Informatics, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Yahiro, Masayuki; Hamada, Akiko; Adachi, Chihaya [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Adachi, Junji [Office for Strategic Research Planning, Kyushu University, 6-10-1 Hakozaki, Higashi, Fukuoka 812-8581 (Japan); Matsumoto, Kiyoshi [IRT Research Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Shimoyama, Isao, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp [Department of Mechano-Informatics, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); IRT Research Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

2016-04-11

We propose a silicon (Si) based near-infrared photodetector using self-assembled organic crystalline nano-pillars, which were formed on an n-type Si substrate and were covered with an Au thin-film. These structures act as antennas for near-infrared light, resulting in an enhancement of the light absorption on the Au film. Because the Schottky junction is formed between the Au/n-type Si, the electron excited by the absorbed light can be detected as photocurrent. The optical measurement revealed that the nano-pillar structures enhanced the responsivity for the near-infrared light by 89 (14.5 mA/W) and 16 (0.433 mA/W) times compared with those of the photodetector without nano-pillars at the wavelengths of 1.2 and 1.3 μm, respectively. Moreover, no polarization dependency of the responsivity was observed, and the acceptable incident angle ranged from 0° to 30°. These broad responses were likely to be due to the organic nano-pillar structures' having variation in their orientation, which is advantageous for near-infrared detector uses.

Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

Science.gov (United States)

Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Directory of Open Access Journals (Sweden)

Xiaosheng Tang

2018-01-01

Full Text Available Lead-halide perovskites have emerged as one kind of important optoelectronic materials with excellent performance in photovoltaic and light-emitting diode applications. Herein, we reported all-inorganic perovskite CsPb2Br5 microsheets prepared by a facile injection method. Through the X-ray diffraction (XRD and Scanning Electron Microscope (SEM, it could be seen that the CsPb2Br5 microsheets showed single tetragonal crystalline phase and kept uniform square shape. Moreover, the as-synthesized CsPb2Br5 microsheets exhibited photoluminescence emission at 513 nm, and the UV–vis absorption spectrum further indicated the band gap of CsPb2Br5 microsheets was ≈2.50 eV. Additionally, the as-fabricated CsPb2Br5 microsheets based photodetector exhibited faster photoresponse characteristics of short rise time (0.71 s and decay time (0.60 s, which demonstrated its promising application as high performance electronic and optoelectronic devices.

Colloidal quantum dot photodetectors

KAUST Repository

Konstantatos, Gerasimos

2011-05-01

We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.

Synergistic Effect of Hybrid Multilayer In2Se3 and Nanodiamonds for Highly Sensitive Photodetectors.

Science.gov (United States)

Zheng, Zhaoqiang; Yao, Jiandong; Xiao, Jun; Yang, Guowei

2016-08-10

Layered materials have rapidly established themselves as intriguing building blocks for next-generation photodetection platforms in view of their exotic electronic and optical attributes. However, both relatively low mobility and heavier electron effective mass limit layered materials for high-performance applications. Herein, we employed nanodiamonds (NDs) to promote the performance of multilayer In2Se3 photodetectors for the first time. This hybrid NDs-In2Se3 photodetector showed a tremendous promotion of photodetection performance in comparison to pristine In2Se3 ones. This hybrid devices exhibited remarkable detectivity (5.12 × 10(12) jones), fast response speed (less than 16.6 ms), and decent current on/off ratio (∼2285) simultaneously. These parameters are superior to most reported layered materials based photodetectors and even comparable to the state-of-the-art commercial photodetectors. Meanwhile, we attributed this excellent performance to the synergistic effect between NDs and the In2Se3. They can greatly enhance the broad spectrum absorption and promote the injection of photoexcited carrier in NDs to In2Se3. These results actually open up a new scenario for designing and fabricating innovative optoelectronic systems.

Design and Analysis of a Multicolor Quantum Well Infrared Photodetector

National Research Council Canada - National Science Library

Alves, Fabio D. P

2005-01-01

.... These characteristics have been found in quantum well infrared photodetectors (QWIP). Driven by these applications, a QWIP photodetector capable of detecting simultaneously infrared emissions within near infrared (NIR...

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors.

Science.gov (United States)

Nasiri, Noushin; Bo, Renheng; Fu, Lan; Tricoli, Antonio

2017-02-02

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10 -11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

An ultraviolet photodetector fabricated from WO3 nanodiscs/reduced graphene oxide composite material

International Nuclear Information System (INIS)

Shao Dali; Sawyer, Shayla; Yu Mingpeng; Lian Jie

2013-01-01

A high sensitivity, fast ultraviolet (UV) photodetector was fabricated from WO 3 nanodiscs (NDs)/reduced graphene oxide (RGO) composite material. The WO 3 NDs/reduced GO composite material was synthesized using a facile three-step synthesis procedure. First, the Na 2 WO 4 /GO precursor was synthesized by homogeneous precipitation. Second, the Na 2 WO 4 /GO precursor was transformed into H 2 WO 4 /GO composites by acidification. Finally, the H 2 WO 4 /GO composites were reduced to WO 3 NDs/RGO via a hydrothermal reduction process. The UV photodetector showed a fast transient response and high responsivity, which are attributed to the improved carrier transport and collection efficiency through graphene. The excellent material properties of the WO 3 NDs/RGO composite demonstrated in this work may open up new possibilities for using WO 3 NDs/RGO for future optoelectronic applications. (paper)

Photodetector Characteristics in Visible Light Communication

KAUST Repository

Ho, Kang-Ting

2016-04-01

Typically, in the semiconductor industry pn heterojunctions have been used as either light-emitting diodes (LED) or photodiodes by applying forward current bias or reverse voltage bias, respectively. However, since both devices use the same structure, the light emitting and detecting properties could be combine in one single device, namely LED-based photodetector. Therefore, by integrating LED-based photodetectors as either transmitter or receiver, optical wireless communication could be easily implemented for bidirectional visible light communication networks at low-cost. Therefore, this dissertation focus on the investigation of the photodetection characteristics of InGaN LED-based photodetectors for visible light communication in the blue region. In this regard, we obtain external quantum efficiency of 10 % and photoresponse rise time of 71 μs at 405-nm illumination, revealing high-performance photodetection characteristics. Furthermore, we use orthogonal frequency division multiplexing quadrature amplitude modulation codification scheme to enlarge the operational bandwidth. Consequently, the transmission rate of the communication is efficiently enhanced up to 420 Mbit/s in visible light communication.

Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

Science.gov (United States)

Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

2018-02-01

The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

2014-01-01

UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

Photodetectors for weak-signal detection fabricated from ZnO:(Li,N) films

Energy Technology Data Exchange (ETDEWEB)

He, G.H. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhou, H. [Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005 (China); Shen, H. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); Lu, Y.J. [Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001 (China); Wang, H.Q.; Zheng, J.C. [Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005 (China); Li, B.H. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); Shan, C.X., E-mail: shancx@ciomp.ac.cn [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China); Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001 (China); Shen, D.Z. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun 130033 (China)

2017-08-01

Highlights: • ZnO films with carrier concentration as low as 5.0 × 10{sup 13} cm{sup −3} have been prepared via a lithium and nitrogen codoping method. • Ultraviolet photodetector that can detect weak signal with power density as low as 20 nw/cm{sup 2} have been fabricated from the ZnO:(Li,N) films. • The detectivity and noise equivalent power of the photodetector can reach 3.60 × 10{sup 15} cmHz{sup 1/2}/W and 6.67 × 10{sup −18} W{sup −1}, both of which are amongst the best values ever reported for ZnO photodetectors. - Abstract: ZnO films with carrier concentration as low as 5.0 × 10{sup 13} cm{sup −3} have been prepared via a lithium and nitrogen codoping method, and ultraviolet photodetectors have been fabricated from the films. The photodetectors can be used to detect weak signals with power density as low as 20 nw/cm{sup 2}, and the detectivity and noise equivalent power of the photodetector can reach 3.60 × 10{sup 15} cmHz{sup 1/2}/W and 6.67 × 10{sup −18} W{sup −1}, respectively, both of which are amongst the best values ever reported for ZnO based photodetectors. The high-performance of the photodetector can be attributed to the relatively low carrier concentration of the ZnO:(Li,N) films.

Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

Science.gov (United States)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

2016-10-01

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

Science.gov (United States)

Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

2015-02-01

In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Colloidal quantum dot photodetectors

KAUST Repository

Konstantatos, Gerasimos; Sargent, Edward H.

2011-01-01

in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D

Enhanced photo-response of porous silicon photo-detectors by embeddingTitanium-dioxide nano-particles

Science.gov (United States)

Ali, Hiba M.; Makki, Sameer A.; Abd, Ahmed N.

2018-05-01

Porous silicon (n-PS) films can be prepared by photoelectochemical etching (PECE) Silicon chips n - types with 15 (mA / cm2), in 15 minutes etching time on the fabrication nano-sized pore arrangement. By using X-ray diffraction measurement and atomic power microscopy characteristics (AFM), PS was investigated. It was also evaluated the crystallites size from (XRD) for the PS nanoscale. The atomic force microscopy confirmed the nano-metric size chemical fictionalization through the electrochemical etching that was shown on the PS surface chemical composition. The atomic power microscopy checks showed the roughness of the silicon surface. It is also notified (TiO2) preparation nano-particles that were prepared by pulse laser eradication in ethanol (PLAL) technique through irradiation with a Nd:YAG laser pulses TiO2 target that is sunk in methanol using 400 mJ of laser energy. It has been studied the structural, optical and morphological of TiO2NPs. It has been detected that through XRD measurement, (TiO2) NPs have been Tetragonal crystal structure. While with AFM measurements, it has been realized that the synthesized TiO2 particles are spherical with an average particle size in the (82 nm) range. It has been determined that the energy band gap of TiO2 NPs from optical properties and set to be in (5eV) range.The transmittance and reflectance spectra have determined the TiO2 NPs optical constants. It was reported the effectiveness of TiO2 NPs expansion on the PS Photodetector properties which exposes the benefits in (Al/PS/Si/Al). The built-in tension values depend on the etching time current density and laser flounce. Al/TiO2/PS/Si/Al photo-detector heterojunction have two response peaks that are situated at 350 nm and (700 -800nm) with max sensitivity ≈ 0.7 A/W. The maximum given detectivity is 9.38at ≈ 780 nm wavelength.

Low-noise, transformer-coupled resonant photodetector for squeezed state generation.

Science.gov (United States)

Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

2017-10-01

In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8×10 5 V/A, and the input current noise of less than 4.7 pA/Hz. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

Science.gov (United States)

Li, Guanghui; Liu, Lin; Wu, Guan; Chen, Wei; Qin, Sujie; Wang, Yi; Zhang, Ting

2016-09-01

A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm -2 ), the device has a photoresponsivity of 1.52 A W -1 , with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10 4 when the power density reaches ≈2.5 mW cm -2 . The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon nanotube woven textile photodetector

Science.gov (United States)

Zubair, Ahmed; Wang, Xuan; Mirri, Francesca; Tsentalovich, Dmitri E.; Fujimura, Naoki; Suzuki, Daichi; Soundarapandian, Karuppasamy P.; Kawano, Yukio; Pasquali, Matteo; Kono, Junichiro

2018-01-01

The increasing interest in mobile and wearable technology demands the enhancement of functionality of clothing through incorporation of sophisticated architectures of multifunctional materials. Flexible electronic and photonic devices based on organic materials have made impressive progress over the past decade, but higher performance, simpler fabrication, and most importantly, compatibility with woven technology are desired. Here we report on the development of a weaved, substrateless, and polarization-sensitive photodetector based on doping-engineered fibers of highly aligned carbon nanotubes. This room-temperature-operating, self-powered detector responds to radiation in an ultrabroad spectral range, from the ultraviolet to the terahertz, through the photothermoelectric effect, with a low noise-equivalent power (a few nW/Hz 1 /2) throughout the range and with a Z T -factor value that is twice as large as that of previously reported carbon nanotube-based photothermoelectric photodetectors. Particularly, we fabricated a ˜1 -m-long device consisting of tens of p+-p- junctions and weaved it into a shirt. This device demonstrated a collective photoresponse of the series-connected junctions under global illumination. The performance of the device did not show any sign of deterioration through 200 bending tests with a bending radius smaller than 100 μ m as well as standard washing and ironing cycles. This unconventional photodetector will find applications in wearable technology that require detection of electromagnetic radiation.

Interfacial Electronic Structures of Photodetectors Based on C8BTBT/Perovskite.

Science.gov (United States)

Li, Lin; Tong, Sichao; Zhao, Yuan; Wang, Can; Wang, Shitan; Lyu, Lu; Huang, Yingbao; Huang, Han; Yang, Junliang; Niu, Dongmei; Liu, Xiaoliang; Gao, Yongli

2018-06-07

Comprehensive measurements of ultraviolet photoemission spectroscopy, X-ray photoemission spectroscopy, X-ray diffraction, and atomic force microscopy are adopted to investigate the corelevance of energy level alignment, molecular orientation, and film growth of Au/C8BTBT/perovskite interfaces. A small energy offset of valence band maximum of 0.06 eV between perovskite and C8BTBT makes hole transportation feasible. About 0.65 eV upward shift of energy levels is observed with the deposition of the Au film on C8BTBT, which enhances hole transportation to the Au electrode. The observations from the interface analysis are supported by a prototype photodetector of Au (80 nm)/C8BTBT (20 nm)/perovskite (100 nm) that exhibits excellent performances whose responsivity can reach up to 2.65 A W -1 , 4 times higher than the best CH 3 NH 3 PbI 3 photodetectors.

Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form.

Science.gov (United States)

Liu, Junku; Guo, Nan; Xiao, Xiaoyang; Zhang, Kenan; Jia, Yi; Zhou, Shuyun; Wu, Yang; Li, Qunqing; Xiao, Lin

2017-11-22

In this study, we fabricate air-stable p-type multi-layered MoTe 2 phototransistor using Au as electrodes, which shows pronounced photovoltaic response in off-state with asymmetric contact form. By analyzing the spatially resolved photoresponse using scanning photocurrent microscopy, we found that the potential steps are formed in the vicinity of the electrodes/MoTe 2 interface due to the doping of the MoTe 2 by the metal contacts. The potential step dominates the separation of photoexcited electron-hole pairs in short-circuit condition or with small V sd biased. Based on these findings, we infer that the asymmetric contact cross-section between MoTe 2 -source and MoTe 2 -drain electrodes is the reason to form non-zero net current and photovoltaic response. Furthermore, MoTe 2 phototransistor shows a faster response in short-circuit condition than that with higher biased V sd within sub-millisecond, and its spectral range can be extended to the infrared end of 1550 nm.

High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction

Energy Technology Data Exchange (ETDEWEB)

Cai, Yuhua; Xiang, Jinzhong, E-mail: jzhxiang@ynu.edu.cn [School of Physical and Astronomy, Yunnan University, Kunming 650091 (China); Tang, Libin, E-mail: scitang@163.com; Ji, Rongbin, E-mail: jirongbin@gmail.com; Zhao, Jun; Kong, Jincheng [Kunming Institute of Physics, Kunming 650223 (China); Lai, Sin Ki; Lau, Shu Ping [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong); Zhang, Kai [Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Suzhou 215123 (China)

2016-08-15

A high performance ultraviolet (UV) photodetector is receiving increasing attention due to its significant applications in fire warning, environmental monitoring, scientific research, astronomical observation, etc. The enhancement in performance of the UV photodetector has been impeded by lacking of a high-efficiency heterojunction in which UV photons can efficiently convert into charges. In this work, the high performance UV photodetectors have been realized by utilizing organic/inorganic heterojunctions based on a ZnO nanoflakes/poly (N-vinylcarbazole) hybrid. A transparent conducting polymer poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)-coated quartz substrate is employed as the anode in replacement of the commonly ITO-coated glass in order to harvest shorter UV light. The devices show a lower dark current density, with a high responsivity (R) of 7.27 × 10{sup 3 }A/W and a specific detectivity (D*) of 6.20 × 10{sup 13} cm Hz{sup 1/2}/W{sup −1} at 2 V bias voltage in ambient environment (1.30 mW/cm{sup 2} at λ = 365 nm), resulting in the enhancements in R and D* by 49% and one order of magnitude, respectively. The study sheds light on developing high-performance, large scale-array, flexible UV detectors using the solution processable method.

EFFICIENT POLYMER PHOTOVOLTAIC DEVICES BASED ON POLYMER D-A BLENDS

Institute of Scientific and Technical Information of China (English)

Xian-yu Deng; Li-ping Zheng; Yue-qi Mo; Gang Yu; Wei Yang; Wen-hua Weng; Yong Cao

2001-01-01

Recent work demonstrated that efficient solar-energy conversion could be achieved in polymer photovoltaic cells (PVCs) based on interpenetrating bi-continuous networks[1,2]. In this paper we present a comprehensive study on improving energy conversion efficiencies of PVCs based on composite films of MEHPPV and fullerene derivatives. Carrier collection efficiency of ca. 30% el/ph and energy conversion efficiency of 3.9% were achieved at 500 nm. At reverse bias of 15 V, the photosensitivity reached 0.8 A/W, corresponding to a quantum efficiency over 100% el/ph. These results suggest that high efficiency photoelectric conversion can be achieved in polymer devices with M-P-M structure. These devices are promising for practical applications such as plastic solar cells and plastic photodetectors.

International Photovoltaic Program Plan

Energy Technology Data Exchange (ETDEWEB)

Costello, D.; Koontz, R.; Posner, D.; Heiferling, P.; Carpenter, P.; Forman, S.; Perelman, L.

1979-12-01

The International Photovoltaics Program Plan is in direct response to the Solar Photovoltaic Energy Research, Development, and Demonstration Act of 1978 (PL 95-590). As stated in the Act, the primary objective of the plan is to accelerate the widespread use of photovoltaic systems in international markets. Benefits which could result from increased international sales by US companies include: stabilization and expansion of the US photovoltaic industry, preparing the industry for supplying future domestic needs; contribution to the economic and social advancement of developing countries; reduced world demand for oil; and improvements in the US balance of trade. The plan outlines programs for photovoltaic demonstrations, systems developments, supplier assistance, information dissemination/purchaser assistance, and an informaion clearinghouse. Each program element includes tactical objectives and summaries of approaches. A program management office will be established to coordinate and manage the program plan. Although the US Department of Energy (DOE) had the lead responsibility for preparing and implementing the plan, numerous federal organizations and agencies (US Departments of Commerce, Justice, State, Treasury; Agency for International Development; ACTION; Export/Import Bank; Federal Trade Commission; Small Business Administration) were involved in the plan's preparation and implementation.

Conditions for a carrier multiplication in amorphous-selenium based photodetector

Energy Technology Data Exchange (ETDEWEB)

Masuzawa, Tomoaki; Kuniyoshi, Shingo; Onishi, Masanori; Kato, Richika; Saito, Ichitaro; Okano, Ken [Department of Material Science, International Christian University, S102 Science Hall, ICU, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan); Yamada, Takatoshi [Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba, Ibaraki 305-8568 (Japan); Koh, Angel T. T.; Chua, Daniel H. C. [Department of Materials Science and Engineering, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore); Shimosawa, Tatsuo [Department of Clinical Laboratory, Faculty of Medicine, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo 113-8655 (Japan)

2013-02-18

Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector.

Conditions for a carrier multiplication in amorphous-selenium based photodetector

International Nuclear Information System (INIS)

Masuzawa, Tomoaki; Kuniyoshi, Shingo; Onishi, Masanori; Kato, Richika; Saito, Ichitaro; Okano, Ken; Yamada, Takatoshi; Koh, Angel T. T.; Chua, Daniel H. C.; Shimosawa, Tatsuo

2013-01-01

Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector.

Photodetectors: Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment (Adv. Mater. 31/2016).

Science.gov (United States)

Jo, Seo-Hyeon; Park, Hyung-Youl; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Choi, Seunghyuk; Kim, Minwoo; Park, Yongkook; Lee, Jaehyeong; Song, Young Jae; Lee, Sungjoo; Park, Jin-Hong

2016-08-01

The effects of triphenylphosphine (PPh3 ) and (3-amino-propyl)triethoxysilane (APTES) on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by J.-H. Park and co-workers on page 6711 in comparison with a conventional MoS2 device. A very high performance ReSe2 photodetector is demonstrated, which has a broad photodetection range, high photoresponsivity (1.18 × 10(6) A W(-1) ), and fast photoswitching speed (rising/decaying time: 58/263 ms). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Measuring the photodetector frequency response for ultrasonic applications by a heterodyne system with difference- frequency servo control.

Science.gov (United States)

Koch, Christian

2010-05-01

A technique for the calibration of photodiodes in ultrasonic measurement systems using standard and cost-effective optical and electronic components is presented. A heterodyne system was realized using two commercially available distributed feedback lasers, and the required frequency stability and resolution were ensured by a difference-frequency servo control scheme. The frequency-sensitive element generating the error signal for the servo loop comprised a delay-line discriminator constructed from electronic elements. Measurements were carried out at up to 450 MHz, and the uncertainties of about 5% (k = 2) can be further reduced by improved radio frequency power measurement without losing the feature of using only simple elements. The technique initially dedicated to the determination of the frequency response of photodetectors applied in ultrasonic applications can be transferred to other application fields of optical measurements.

Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K

Directory of Open Access Journals (Sweden)

Abbas Haddadi

2017-03-01

Full Text Available We report the demonstration of high-performance long-wavelength infrared (LWIR nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μ m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω · cm 2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm· Hz / W and a background–limited operating temperature of 110 K.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer

KAUST Repository

Pak, Yusin

2017-12-05

2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer

KAUST Repository

Pak, Yusin; Park, Woojin; Mitra, Somak; Devi, Assa Aravindh Sasikala; Loganathan, Kalaivanan; Kumaresan, Yogeenth; Kim, Yonghun; Cho, Byungjin; Jung, Gun-Young; Hussain, Muhammad Mustafa; Roqan, Iman S.

2017-01-01

2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

A high-sensitive ultraviolet photodetector composed of double-layered TiO{sub 2} nanostructure and Au nanoparticles film based on Schottky junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Huan; Qin, Pei [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Yi, Guobin, E-mail: ygb702@163.com [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Zu, Xihong [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Zhang, Li, E-mail: zhangli2368@126.com [School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006 (China); Hong, Wei; Chen, Xudong [School of Chemistry and Chemical Engineering, Sun Yat-Sen (Zhongshan) University, Guangzhou, 510275 (China)

2017-06-15

In this study, a Schottky-type ultraviolet (UV) photodetector based on double-layered nanostructured TiO{sub 2}/Au films was fabricated. Double-layered titanium dioxide (TiO{sub 2}) nanostructures composed of one layer of TiO{sub 2} nano-flowers on one layer of TiO{sub 2} nanorods on fluorine-doped tin oxide (FTO) pre-coated glass substrates were synthesized via a convenient hydrothermal method using titanium butoxide and hydrochloric acid as the starting precursor, without involving the use of any other surfactants and catalysts. A granular-shaped thin-layer of Au film using vacuum sputter coating technique was subsequently deposited on TiO{sub 2} for the formation of Schottky-type photodetector. The as-fabricated Schottky device showed various photocurrent responses when irradiated with different wavelength of UV light. This suggests that the newly-developed photodetectors have promising potential for identifying different UV light wavelengths. - Highlights: • A novel double-layered TiO{sub 2} nanostructure was synthesized by a simple method. • An UV photodetector composed of TiO{sub 2} and Au was designed and fabricated. • The preparation method of TiO{sub 2}/Au UV photodetector was simple and convenient. • The UV photodetector based on TiO{sub 2}/Au showed excellent sensitivity to UV light.

Hybrid organic photodetectors for radiography

Energy Technology Data Exchange (ETDEWEB)

Buechele, Patric [Light Technology Institute, Karlsruhe Institute of Technology. Karlsruhe (Germany); Siemens AG. Corporate Technologies. Erlangen (Germany); Schmidt, Oliver; Tedde, Sandro; Hartmann, David [Siemens AG. Corporate Technologies. Erlangen (Germany); Richter, Moses [Institute for Materials for Electronics and Energy Technology, Friedrich-Alexander University. Erlangen (Germany); Lemmer, Uli [Light Technology Institute, Karlsruhe Institute of Technology. Karlsruhe (Germany)

2013-07-01

Most of todays X-ray detectors are using an indirect conversion mechanism. The X-ray radiation is converted into visible light within a thick scintillator layer. The visible light is then absorbed by standard thin-film photodetectors. The isotropic propagation of light in the scintillator reduces the resolution of the x-ray imager. This work avoids the stacked structure by integration of inorganic PbS quantum dots directly into the bulk hetero junction (BHJ) of an organic photodetector. X-ray photons are immediately converted into charge carriers and travel in direction of the electrical field towards the electrodes. However, this concept demands much thicker organic layers than known from conventional OLED and OPV processing. We demonstrate that thick diodes can be achieved with a spray coating process and the influence of spraying parameters on device performance is discussed.

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Science.gov (United States)

Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

2017-11-01

In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Directory of Open Access Journals (Sweden)

Abd Rahim Alhan Farhanah

2017-01-01

Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Enhanced Electron Photoemission by Collective Lattice Resonances in Plasmonic Nanoparticle-Array Photodetectors and Solar Cells

DEFF Research Database (Denmark)

Zhukovsky, Sergei; Babicheva, Viktoriia; Uskov, Alexander

2014-01-01

We propose to use collective lattice resonances in plasmonic nanoparticle arrays to enhance and tailor photoelectron emission in Schottky barrier photodetectors and solar cells. We show that the interaction between narrow-band lattice resonances (the Rayleigh anomaly) and broader-band individual-particle...... excitations (localized surface plasmon resonances) leads to stronger local field enhancement. In turn, this causes a significant increase of the photocurrent compared to the case when only individual-particle excitations are present. The results can be used to design new photodetectors with highly selective......, tunable spectral response, which are able to detect photons with the energy below the semiconductor bandgap. The findings can also be used to develop solar cells with increased efficiency....

High-Performance Red-Light Photodetector Based on Lead-Free Bismuth Halide Perovskite Film.

Science.gov (United States)

Tong, Xiao-Wei; Kong, Wei-Yu; Wang, You-Yi; Zhu, Jin-Miao; Luo, Lin-Bao; Wang, Zheng-Hua

2017-06-07

In this study, we developed a sensitive red-light photodetector (RLPD) based on CsBi 3 I 10 perovskite thin film. This inorganic, lead-free perovskite was fabricated by a simple spin-coating method. Device analysis reveals that the as-assembled RLPD was very sensitive to 650 nm light, with an on/off ratio as high as 10 5 . The responsivity and specific detectivity of the device were estimated to be 21.8 A/W and 1.93 × 10 13 Jones, respectively, which are much better than those of other lead halide perovskite devices. In addition, the device shows a fast response (rise time: 0.33 ms; fall time: 0.38 ms) and a high external quantum efficiency (4.13 × 10 3 %). It is also revealed that the RLPD has a very good device stability even after storage for 3 months under ambient conditions. In summary, we suggest that the CsBi 3 I 10 perovskite photodetector developed in this study may have potential applications in future optoelectronic systems.

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.

Science.gov (United States)

Karimi, Mohammad; Jain, Vishal; Heurlin, Magnus; Nowzari, Ali; Hussain, Laiq; Lindgren, David; Stehr, Jan Eric; Buyanova, Irina A; Gustafsson, Anders; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

2017-06-14

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n + -i-n + InP nanowires periodically ordered in arrays. The nanowires were grown by metal-organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiO x /ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.

Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

KAUST Repository

Wyatt-Moon, Gwenhivir

2017-11-28

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

KAUST Repository

Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G; Semple, James; Anthopoulos, Thomas D.

2017-01-01

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

A molecular spin-photovoltaic device.

Science.gov (United States)

Sun, Xiangnan; Vélez, Saül; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Parui, Subir; Zhu, Xiangwei; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E

2017-08-18

We fabricated a C 60 fullerene-based molecular spin-photovoltaic device that integrates a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents can be created by balancing the external partially spin-polarized injection with the photogenerated carriers. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Omnidirectional Harvesting of Weak Light Using a Graphene Quantum Dot-Modified Organic/Silicon Hybrid Device

KAUST Repository

Tsai, Meng-Lin

2017-04-21

Despite great improvements in traditional inorganic photodetectors and photovoltaics, more progress is needed in the detection/collection of light at low-level conditions. Traditional photodetectors tend to suffer from high noise when operated at room temperature; therefore, these devices require additional cooling systems to detect weak or dim light. Conventional solar cells also face the challenge of poor light-harvesting capabilities in hazy or cloudy weather. The real world features such varying levels of light, which makes it important to develop strategies that allow optical devices to function when conditions are less than optimal. In this work, we report an organic/inorganic hybrid device that consists of graphene quantum dot-modified poly(3,4-ethylenedioxythiophene) polystyrenesulfonate spin-coated on Si for the detection/harvest of weak light. The hybrid configuration provides the device with high responsivity and detectability, omnidirectional light trapping, and fast operation speed. To demonstrate the potential of this hybrid device in real world applications, we measured near-infrared light scattered through human tissue to demonstrate noninvasive oximetric photodetection as well as characterized the device\\'s photovoltaic properties in outdoor (i.e., weather-dependent) and indoor weak light conditions. This organic/inorganic device configuration demonstrates a promising strategy for developing future high-performance low-light compatible photodetectors and photovoltaics.

SPIN-POLARIZED PHOTOCURRENT THROUGH QUANTUM DOT PHOTODETECTOR

Directory of Open Access Journals (Sweden)

Nguyen Van Hieu

2017-11-01

Full Text Available The theory of the photocurrent through the photodetector based on a two-level semiconductor quantum dot (QD is presented. The analytical expressions of the matrix elements of the electronic transitions generated by the absorption of the circularly polarized photons are derived in the lowest order of the perturbation theory with respect to the electron tunneling interaction as well as the electron-photon interaction. From these expressions the mechanism of the generation of the spin-polarized of electrons in the photocurrent is evident. It follows that the photodetector based on the two-level semiconductor QD can be used as the model of a source of highly spinpolarized electrons.

Thiol passivation of MWIR type II superlattice photodetectors

Science.gov (United States)

Salihoglu, O.; Muti, A.; Aydinli, A.

2013-06-01

Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH3(CH2)17SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation.

Cryogenic photodetectors

Science.gov (United States)

Chardin, G.

2000-03-01

Some of the most significant developments in cryogenic photodetectors are presented. In particular, the main characteristics of microbolometers involving Transition Edge- and NTD-sensors and offering resolutions of a few eV in the keV range, superconducting tunnel junction detectors with resolutions of the order of 10 eV or offering position sensitivity, and infrared bolometers with recent developments towards matrix detectors are discussed. Some of the recent achievements using large mass bolometers for gamma and neutron discriminating detectors, and future prospects of single photon detection in the far infrared using Single Electron Transistor devices are also presented.

Cryogenic photodetectors

CERN Document Server

Chardin, G

2000-01-01

Some of the most significant developments in cryogenic photodetectors are presented. In particular, the main characteristics of microbolometers involving Transition Edge- and NTD-sensors and offering resolutions of a few eV in the keV range, superconducting tunnel junction detectors with resolutions of the order of 10 eV or offering position sensitivity, and infrared bolometers with recent developments towards matrix detectors are discussed. Some of the recent achievements using large mass bolometers for gamma and neutron discriminating detectors, and future prospects of single photon detection in the far infrared using Single Electron Transistor devices are also presented.

The properties of transparent TiO2 films for Schottky photodetector

Directory of Open Access Journals (Sweden)

Sung-Ho Park

2017-08-01

Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage

International Nuclear Information System (INIS)

Hu, Wei; Yang, Shuzhen; Fan, Peng; Pan, Anlian; Wu, Runsheng; Yang, Junliang

2017-01-01

Organometal trihalide perovskites have emerged as a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. Using a high-quality perovskite thin film prepared by solvent-induced crystallization method and adopting a novel device configuration based on photon recycling effect, a perovskite thin-film photodetector has been constructed with the highest external quantum efficiency of 4.1  ×  10 4 % and responsivity of 219 A W −1 at a low bias of 1 V so far. The device working mechanism was further disclosed based on energy band bending model. The high-performance and low working-voltage perovskite thin-film photodetector will find potential applications in photodetection and optoelectronic integrated circuits. (paper)

High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

KAUST Repository

Yang, Zhenqian

2018-01-10

The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Directory of Open Access Journals (Sweden)

Liwen Sang

2013-08-01

Full Text Available Ultraviolet (UV photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

Development of analog solid-state photo-detectors for Positron Emission Tomography

International Nuclear Information System (INIS)

Bisogni, Maria Giuseppina; Morrocchi, Matteo

2016-01-01

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Development of analog solid-state photo-detectors for Positron Emission Tomography

Energy Technology Data Exchange (ETDEWEB)

Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

2016-02-11

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Enlarging photovoltaic effect: combination of classic photoelectric and ferroelectric photovoltaic effects.

Science.gov (United States)

Zhang, Jingjiao; Su, Xiaodong; Shen, Mingrong; Dai, Zhihua; Zhang, Lingjun; He, Xiyun; Cheng, Wenxiu; Cao, Mengyu; Zou, Guifu

2013-01-01

Converting light energy to electrical energy in photovoltaic devices relies on the photogenerated electrons and holes separated by the built-in potential in semiconductors. Photo-excited electrons in metal electrodes are usually not considered in this process. Here, we report an enhanced photovoltaic effect in the ferroelectric lanthanum-modified lead zirconate titanate (PLZT) by using low work function metals as the electrodes. We believe that electrons in the metal with low work function could be photo-emitted into PLZT and form the dominant photocurrent in our devices. Under AM1.5 (100 mW/cm²) illumination, the short-circuit current and open-circuit voltage of Mg/PLZT/ITO are about 150 and 2 times of those of Pt/PLZT/ITO, respectively. The photovoltaic response of PLZT capacitor was expanded from ultraviolet to visible spectra, and it may have important impact on design and fabrication of high performance photovoltaic devices based on ferroelectric materials.

Nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors

Energy Technology Data Exchange (ETDEWEB)

Chang, Ruo-Ping [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

2013-02-01

We have demonstrated nano-structured Cu(In,Al)Se{sub 2} (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al–CIAS–Al metal–semiconductor–metal structure and vertical structure with CIAS/ZnSe NWs annular p–n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p–n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm. - Highlights: ► We demonstrate nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors. ► Photodetectors were fabricated on ZnO nanowires/ZnO/Mo/ITO glass substrate. ► Two detection schemes studied: a plain MSM structure and a vertical structure. ► Photocurrent amplification for the vertical structure is two orders of magnitude. ► Photocurrent amplification for the MSM structure is one order of magnitude.

A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

Science.gov (United States)

Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

2018-04-01

p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.

Science.gov (United States)

Yu, Jingjing; Javaid, Kashif; Liang, Lingyan; Wu, Weihua; Liang, Yu; Song, Anran; Zhang, Hongliang; Shi, Wen; Chang, Ting-Chang; Cao, Hongtao

2018-03-07

A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10 7 , and a specific detectivity up to 3.3 × 10 14 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

Hexagonal-like Nb2O5 Nanoplates-Based Photodetectors and Photocatalyst with High Performances

Science.gov (United States)

Liu, Hui; Gao, Nan; Liao, Meiyong; Fang, Xiaosheng

2015-01-01

Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging, environmental monitoring, and air and water sterilization, as well as flame sensing and early rocket plume detection. Herein, hexagonal-like Nb2O5 nanoplates are synthesized using a facile solvothermal method. UV photodetectors based on single Nb2O5 nanoplates are constructed and the optoelectronic properties have been probed. The photodetectors show remarkable sensitivity with a high external quantum efficiency (EQE) of 9617%, and adequate wavelength selectivity with respect to UV-A light. In addition, the photodetectors exhibit robust stability and strong dependence of photocurrent on light intensity. Also, a low-cost drop-casting method is used to fabricate photodetectors based on Nb2O5 nanoplate film, which exhibit singular thermal stability. Moreover, the hexagonal-like Nb2O5 nanoplates show significantly better photocatalytic performances in decomposing Methylene-blue and Rhdamine B dyes than commercial Nb2O5.

Ion implantation enhanced metal-Si-metal photodetectors

Science.gov (United States)

Sharma, A. K.; Scott, K. A. M.; Brueck, S. R. J.; Zolper, J. C.; Myers, D. R.

1994-05-01

The quantum efficiency and frequency response of simple Ni-Si-Ni metal-semiconductor-metal (MSM) photodetectors at long wavelengths are significantly enhanced with a simple, ion-implantation step to create a highly absorbing region approx. 1 micron below the Si surface. The internal quantum efficiency is improved by a factor of approx. 3 at 860 nm (to 64%) and a full factor of ten at 1.06 microns (to 23%) as compared with otherwise identical unimplanted devices. Dark currents are only slightly affected by the implantation process and are as low as 630 pA for a 4.5-micron gap device at 10-V bias. Dramatic improvement in the impulse response is observed, 100 ps vs. 600 ps, also at 10-V bias and 4.5-micron gap, due to the elimination of carrier diffusion tails in the implanted devices. Due to its planar structure, this device is fully VLSI compatible. Potential applications include optical interconnections for local area networks and multi-chip modules.

Large-aperture hybrid photo-detector

International Nuclear Information System (INIS)

Kawai, Y.; Nakayama, H.; Kusaka, A.; Kakuno, H.; Abe, T.; Iwasaki, M.; Aihara, H.; Tanaka, M.; Shiozawa, M.; Kyushima, H.; Suyama, M.

2007-01-01

We have developed the first complete large-aperture (13-inch diameter) hybrid photo-detector (HPD). The withstanding voltage problem has been overcome and we were able to attain an HPD operating voltage of +20 kV. Adoption of our newly developed backside illumination avalanche diode (AD) was also critical in successfully countering the additional problem of an increase in AD leakage after the activation process. We observed single photon signal timing jitter of under 450 ps in FWHM, electron transit time of ∼12 ns, and clear pulse height separation up to several photoelectron peaks, all greatly superior to the performance of any conventional large-aperture photomultiplier tubes (PMTs). In addition, our HPD has a much simpler structure than conventional large-aperture PMTs, which simplifies mass production and lowers manufacturing cost. We believe that these attributes position our HPD as the most suitable photo-detector for the next generation mega-ton class water-Cherenkov detector, which is expected to be more than 20x larger than the Super-Kamiokande (SK) detector

Submonolayer Quantum Dot Infrared Photodetector

Science.gov (United States)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

FABRICATION, MORPHOLOGICAL AND OPTOELECTRONIC PROPERTIES OF ANTIMONY ON POROUS SILICON AS MSM PHOTODETECTOR

Directory of Open Access Journals (Sweden)

H. A. Hadi

2015-07-01

Full Text Available We report on the fabrication and characterization of MSM photodetector. We investigated the surface morphological and the structural properties of the porous silicon by optical microscopy, atomic force microscope (AFM and X-ray diffraction. The metal–semiconductor–metal photodetector were fabricated by using Sb as Schottky contact metal.The junction exhibits good rectification ratio of 105 at bias of 2V. A large photocurrent to dark-current contrast ratio higher than 55 orders of magnitude and low dark currents below 0.89 nA .High   responsivity of 0.225A/W at 400 nm and 0.15 A/W at 400 and 700nm were observed at an operating bias of less than -2 V, corresponding quantum efficiency of 70% and 26% respectively. The lifetimes are evaluated using OCVD method and the carrier life time is 100 μs. The results show that Sb on porous silicon (PS structures will act as good candidates for making highly efficient photodiodes.

FABRICATION, MORPHOLOGICAL AND OPTOELECTRONIC PROPERTIES OF ANTIMONY ON POROUS SILICON AS MSM PHOTODETECTOR

Directory of Open Access Journals (Sweden)

H. A. Hadi

2014-12-01

Full Text Available We report on the fabrication and characterization of MSM photodetector. We investigated the surface morphological and the structural properties of the porous silicon by optical microscopy, atomic force microscope (AFM and X-ray diffraction. The metal–semiconductor–metal photodetector were fabricated by using Sb as Schottky contact metal.The junction exhibits good rectification ratio of 105 at bias of 2V. A large photocurrent to dark-current contrast ratio higher than 55 orders of magnitude and low dark currents below 0.89 nA .High responsivity of 0.225A/W at 400 nm and 0.15 A/W at 400 and 700nm were observed at an operating bias of less than -2 V, corresponding quantum efficiency of 70% and 26% respectively. The lifetimes are evaluated using OCVD method and the carrier life time is 100 μs. The results show that Sb on porous silicon (PS structures will act as good candidates for making highly efficient photodiodes.

Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors

International Nuclear Information System (INIS)

Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin; Liu, Jietao

2015-01-01

High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array

Fabrication and characterization of metal–semiconductor–metal ultraviolet photodetector based on rutile TiO{sub 2} nanorod

Energy Technology Data Exchange (ETDEWEB)

Selman, Abbas M., E-mail: alabbasiabbas@yahoo.co.uk [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Department of Pharmacology and Toxicology, College of Pharmacy, University of Kufa, Najaf (Iraq); Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)

2016-01-15

The fabrication and characterization of a metal–semiconductor–metal ultraviolet photodetector are studied. The photodetector is based on TiO{sub 2} nanorods (NRs) grown on p-type (1 1 1)-oriented silicon substrate seeded with a TiO{sub 2} layer is synthesized by radio frequency reactive magnetron sputtering. A chemical bath deposition is used to grow TiO{sub 2} NRs on Si substrate. The structural and optical properties of the obtained sample are analyzed by using X-ray diffraction and field emission-scanning electron microscopy. Results show a tetragonal rutile structure of the synthesized TiO{sub 2} NRs. Optical properties are further examined using photoluminescence spectroscopy. A sharp and high-intensity UV peak at 367 nm is observed in comparison with visible defect peaks centered at 432 and 718 nm. Upon exposure to 365 nm light (2.3 mW/cm) at 5 V bias, the device displays 76.06 × 10{sup 2} sensitivity, internal photodetector gain of 77.06, photocurrent of the device is 2.62 × 10{sup −5} A and photoresponse peak of 69.7 mA/W. The response and recovery times are calculated as 18.5 and 19.1 ms upon illumination to a pulse UV light (365 nm, 2.3 mW/cm{sup 2}) at 5 V applied bias. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially-integrated photoelectronic applications.

InN Quantum Dot Based Infra-Red Photodetectors.

Science.gov (United States)

Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

2016-01-01

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

Omnidirectional Harvesting of Weak Light Using a Graphene Quantum Dot-Modified Organic/Silicon Hybrid Device

KAUST Repository

Tsai, Meng-Lin; Tsai, Dung-Sheng; Tang, Libin; Chen, Lih-Juann; Lau, Shu Ping; He, Jr-Hau

2017-01-01

Despite great improvements in traditional inorganic photodetectors and photovoltaics, more progress is needed in the detection/collection of light at low-level conditions. Traditional photodetectors tend to suffer from high noise when operated

Highly Deformable Origami Paper Photodetector Arrays

KAUST Repository

Lin, Chun-Ho

2017-09-25

Flexible electronics will form the basis of many next-generation technologies, such as wearable devices, biomedical sensors, the Internet of things, and more. However, most flexible devices can bear strains of less than 300% as a result of stretching. In this work, we demonstrate a simple and low-cost paper-based photodetector array featuring superior deformability using printable ZnO nanowires, carbon electrodes, and origami-based techniques. With a folded Miura structure, the paper photodetector array can be oriented in four different directions via tessellated parallelograms to provide the device with excellent omnidirectional light harvesting capabilities. Additionally, we demonstrate that the device can be repeatedly stretched (up to 1000% strain), bent (bending angle ±30°), and twisted (up to 360°) without degrading performance as a result of the paper folding technique, which enables the ZnO nanowire layers to remain rigid even as the device is deformed. The origami-based strategy described herein suggests avenues for the development of next-generation deformable optoelectronic applications.

Photovoltaic power generation system with photovoltaic cells as bypass diodes

Science.gov (United States)

Lentine, Anthony L.; Nielson, Gregory N.; Tauke-Pedretti, Anna; Cruz-Campa, Jose Luis; Okandan, Murat

2017-11-28

A photovoltaic power generation system that includes a solar panel is described herein. The solar panel includes a photovoltaic sub-module, which includes a group of microsystem enabled photovoltaic cells. The group includes a first string of photovoltaic cells, a second string of photovoltaic cells, and a differing photovoltaic cell. Photovoltaic cells in the first string are electrically connected in series, and photovoltaic cells in the second string are electrically connected in series. Further, the first string of photovoltaic cells, the second string of photovoltaic cells, and the differing photovoltaic cell are electrically connected in parallel. Moreover, the differing photovoltaic cell is used as a bypass diode for the first string of photovoltaic cells and the second string of photovoltaic cells.

Inkjet-printed transparent nanowire thin film features for UV photodetectors

KAUST Repository

Chen, Shih Pin

2015-01-01

In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable suspension for inkjet printing applications. Sedimentation tests were also carried out to characterize the terminal velocity and dispersion stability of nanowires to avoid potential nozzle clogging problems. The well-dispersed silver nanowire ink was then inkjet printed on PET films to form patterned electrodes. Above the electrodes, another layer of TiO2 nanowires was also printed to create a highly transparent photodetector with >80% visible transmittance. The printed photodetector showed a fairly low dark current of 10-12-10-14 A with a high on/off ratio of 2000 to UV radiation. Under a bias voltage of 2 V, the detector showed fast responses to UV illumination with a rise time of 0.4 s and a recovery time of 0.1 s. More photo currents can also be collected with a larger printed electrode area. In summary, this study shows the feasibility of applying inkjet printing technology to create nanowire thin films with specific patterns, and can be further employed for photoelectric applications. © The Royal Society of Chemistry 2015.

High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics

Science.gov (United States)

Kozyreva, O. A.; Solov'ev, Y. V.; Polukhin, I. S.; Mikhailov, A. K.; Mikhailovskiy, G. A.; Odnoblyudov, M. A.; Gareev, E. Z.; Kolodeznyi, E. S.; Novikov, I. I.; Karachinsky, L. Ya; Egorov, A. Yu; Bougrov, V. E.

2017-11-01

We have fabricated the 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure. Measurement results of optical and electrical characteristics of PIN photodetector chip were the following: photoconductivity at 1550 nm was 0.65 A/W and internal capacitance was 0.025 pF. Microwave model of photodetector was developed and verified by measurements of scattering matrix. The implementation of broadband (up to 20 GHz) hybrid integrated matching and biasing circuit for high-speed photodetector is presented.

The new oxide paradigm for solid state ultraviolet photodetectors

Science.gov (United States)

Rogers, D. J.; Bove, P.; Arrateig, X.; Sandana, V. E.; Teherani, F. H.; Razeghi, M.; McClintock, R.; Frisch, E.; Harel, S.

2018-03-01

The bandgap of wurzite ZnO layers grown on 2 inch diameter c-Al2O3 substrates by pulsed laser deposition was engineered from 3.7 to 4.8 eV by alloying with Mg. Above this Mg content the layers transformed from single phase hcp to mixed hcp/fcc phase before becoming single phase fcc above a bandgap of about 5.5 eV. Metal-Semiconductor-Metal (MSM) photodetectors based on gold Inter-Digitated-Transducer structures were fabricated from the single phase hcp layers by single step negative photolithography and then packaged in TO5 cans. The devices gave over 6 orders of magnitude of separation between dark and light signal with solar rejection ratios (I270 : I350) of over 3 × 105 and dark signals of 300 pA (at a bias of -5V). Spectral responsivities were engineered to fit the "Deutscher Verein des Gas- und Wasserfaches" industry standard form and gave over two decade higher responsivities (14 A/W, peaked at 270 nm) than commercial SiC based devices. Homogeneous Ga2O3 layers were also grown on 2 inch diameter c-Al2O3 substrates by PLD. Optical transmission spectra were coherent with a bandgap that increased from 4.9 to 5.4 eV when film thickness was decreased from 825 to 145 nm. X-ray diffraction revealed that the films were of the β-Ga2O3 (monoclinic) polytype with strong (-201) orientation. β-Ga2O3 MSM photodetectors gave over 4 orders of magnitude of separation between dark and light signal (at -5V bias) with dark currents of 250 pA and spectral responsivities of up to 40 A/W (at -0.75V bias). It was found that the spectral responsivity peak position could be decreased from 250 to 230 nm by reducing film thickness from 825 to 145 nm. This shift in peak responsivity wavelength with film thickness (a) was coherent with the apparent bandgap shift that was observed in transmission spectroscopy for the same layers and (b) conveniently provides a coverage of the spectral region in which MgZnO layers show fcc/hcp phase mixing.

Standard Test Method for Determination of the Spectral Mismatch Parameter Between a Photovoltaic Device and a Photovoltaic Reference Cell

CERN Document Server

American Society for Testing and Materials. Philadelphia

2010-01-01

1.1 This test method covers a procedure for the determination of a spectral mismatch parameter used in performance testing of photovoltaic devices. 1.2 The spectral mismatch parameter is a measure of the error, introduced in the testing of a photovoltaic device, caused by mismatch between the spectral responses of the photovoltaic device and the photovoltaic reference cell, as well as mismatch between the test light source and the reference spectral irradiance distribution to which the photovoltaic reference cell was calibrated. Examples of reference spectral irradiance distributions are Tables E490 or G173. 1.3 The spectral mismatch parameter can be used to correct photovoltaic performance data for spectral mismatch error. 1.4 This test method is intended for use with linear photovoltaic devices. 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.6 This standard does not purport to address all of the safety concerns, if any, a...

Flexible ultraviolet photodetectors based on ZnO-SnO2 heterojunction nanowire arrays

Science.gov (United States)

Lou, Zheng; Yang, Xiaoli; Chen, Haoran; Liang, Zhongzhu

2018-02-01

A ZnO-SnO2 nanowires (NWs) array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I on/I off ratios (up to 103), good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices. Project supported by the National Science Foundation of China (No. 61504136) and the State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine and Physics, Chinese Academy of Sciences.

Barrier Engineered Quantum Dot Infrared Photodetectors

Science.gov (United States)

2015-06-01

251108. 6. Barve, Ajit V., Saumya Sengupta, Jun Oh Kim, John Montoya , Brianna Klein, Mohammad Ali Shirazi, Marziyeh Zamiri et al., "Barrier selection... H . Kim, Z-B. Tian, and Sanjay Krishna. "Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices." (2013

Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect.

Science.gov (United States)

Shen, Yanwei; Yan, Xiaoqin; Si, Haonan; Lin, Pei; Liu, Yichong; Sun, Yihui; Zhang, Yue

2016-03-09

Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.

2D/0D graphene hybrids for visible-blind flexible UV photodetectors.

Science.gov (United States)

Tetsuka, Hiroyuki

2017-07-17

Nitrogen-functionalized graphene quantum dots (NGQDs) are attractive building blocks for optoelectronic devices because of their exceptional tunable optical absorption and fluorescence properties. Here, we developed a high-performance flexible NGQD/graphene field-effect transistor (NGQD@GFET) hybrid ultraviolet (UV) photodetector, using dimethylamine-functionalized GQDs (NMe 2 -GQDs) with a large bandgap of ca. 3.3 eV. The NMe 2 -GQD@GFET photodetector exhibits high photoresponsivity and detectivity of ca. 1.5 × 10 4  A W -1 and ca. 5.5 × 10 11 Jones, respectively, in the deep-UV region as short as 255 nm without application of a backgate voltage. The feasibility of these flexible UV photodetectors for practical application in flame alarms is also demonstrated.

Photovoltaic module and interlocked stack of photovoltaic modules

Science.gov (United States)

Wares, Brian S.

2014-09-02

One embodiment relates to an arrangement of photovoltaic modules configured for transportation. The arrangement includes a plurality of photovoltaic modules, each photovoltaic module including a frame. A plurality of individual male alignment features and a plurality of individual female alignment features are included on each frame. Adjacent photovoltaic modules are interlocked by multiple individual male alignment features on a first module of the adjacent photovoltaic modules fitting into and being surrounded by corresponding individual female alignment features on a second module of the adjacent photovoltaic modules. Other embodiments, features and aspects are also disclosed.

Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions

Energy Technology Data Exchange (ETDEWEB)

Cheng, Ching-Cheng; Liao, Yu-Ming; Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Zhan, Jun-Yu; Lin, Tai-Yuan [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China); Hsieh, Ya-Ping [Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan (China)

2016-08-01

A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.

Long-wavelength germanium photodetectors by ion implantation

International Nuclear Information System (INIS)

Wu, I.C.; Beeman, J.W.; Luke, P.N.; Hansen, W.L.; Haller, E.E.

1990-11-01

Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3 K under an operating bias of up to 70 mV. Optimum peak responsivity and noise equivalent power (NEP) for these sensitive detectors are 0.9 A/W and 5 x 10 -16 W/Hz 1/2 at 99 μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed. 12 refs., 4 figs

Photovoltaic response and values of state dipole moments in single-layered pyrazoloquinoline/polymer composites

Science.gov (United States)

Gondek, E.; Kityk, I. V.; Danel, A.; Sanetra, J.

2008-06-01

We report the photovoltaic response of composite films formed by polymer transport matrices poly(3-octylthiophene) (P3OT) and poly(3-decylthiophene) (PDT) with incorporated 1 H-pyrazolo[3,4- b]quinoline (PAQ) chromophore (see the first figure). The photovoltage (PV) data were obtained for different substituted PAQ possessing different state dipole moments. The photovoltaic cells were formed between ITO and aluminum electrodes. We found that the PV signal of polymer/PAQ substantially depends on the state dipole moments of the pyrazoloquinoline chromophore. This fact indicates on a possibility of significant enhancement of PV efficiency by appropriate variations of the state dipole moments of chromophore. This results in photoinduced electron transfer from polymer serving as donors to PAQ being the electron acceptor. Despite an efficiency of the PV devices is below 1%, however, it may be substantially enhanced in future varying the chromophore state dipole moments appropriately.

Self-powered photogalvanic phosphorene photodetectors with high polarization sensitivity and suppressed dark current.

Science.gov (United States)

Li, Shuaishuai; Wang, Tao; Chen, Xiaoshuang; Lu, Wei; Xie, Yiqun; Hu, Yibin

2018-04-26

High polarization sensitivity, suppressed dark current and low energy consumption are all desirable device properties for photodetectors. In this work, we propose phosphorene-based photodetectors that are driven using photogalvanic effects (PGEs). The inversion symmetry of pristine phosphorene is broken using either application of an out-of-plane gate voltage or a heterostructure that is composed of the original phosphorene and blue phosphorene. The potential asymmetry enables PGEs under illumination by polarized light. Quantum transport calculations show that robust photocurrents are indeed generated by PGEs under a zero external bias voltage because of the broken inversion symmetry. These results indicate that the proposed photodetector is self-powered. In addition, the zero bias voltage eliminates the dark currents that are caused by application of an external bias voltage to traditional photodetectors. High polarization sensitivity to both linearly and circularly polarized light can also be realized, with extinction ratios ranging up to 102. The photoresponse of the proposed phosphorene/blue phosphorene heterostructure can be greatly enhanced by gating and is several orders of magnitude higher than that in gated phosphorene.

Employment of a metal microgrid as a front electrode in a sandwich-structured photodetector.

Science.gov (United States)

Zhang, Junying; Cai, Chao; Pan, Feng; Hao, Weichang; Zhang, Weiwei; Wang, Tianmin

2009-07-01

A highly UV-transparent metal microgrid was prepared and employed as the front electrode in a sandwich-structured ultraviolet (UV) photodetector using TiO(2) thin film as the semiconductor layer. The photo-generated charger carriers travel a shorter distance before reaching the electrodes in comparison with a photodetector using large-spaced interdigitated metal electrodes (where distance between fingers is several to tens of micrometers) on the surface of the semiconductor film. This photodetector responds to UV light irradiation, and the photocurrent intensity increases linearly with the irradiation intensity below 0.2 mW/cm(2).

Ultraviolet photodetectors made from SnO2 nanowires

International Nuclear Information System (INIS)

Wu, Jyh-Ming; Kuo, Cheng-Hsiang

2009-01-01

SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.

Investigating absence of optimal photovoltaics response in CZTS solar cell

Science.gov (United States)

Kumar, Atul; Thakur, Ajay D.

2018-05-01

Cu2ZnSnS4 (CZTS) has an optimal bandgap of 1.5eV. However contrary to expecting an optimal photovoltaic (PV) behavior is usually not seen from using solution processed approach. Here we try to understand the possible key reasons behind this based on the material attributes. The CZTS film is synthesized using two different solvents of Methoxy-ethanol and DMSO. The effect of air annealing and sulphurisation is studied on these two samples for their phase formation mechanism. XRD, TGA, Raman, UV-Vis, AFM and electrical characterization of the films are performed. A diode behavior is obtained in heterojunction of the CZTS/ZnO. Presence of secondary phases and interfacial recombination leads to poor PV behavior without any PV response.

Band-structure tailoring and surface passivation for highly efficient near-infrared responsive PbS quantum dot photovoltaics

Science.gov (United States)

Zhou, Ru; Niu, Haihong; Ji, Fengwei; Wan, Lei; Mao, Xiaoli; Guo, Huier; Xu, Jinzhang; Cao, Guozhong

2016-11-01

PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density surface defects of PbS as two major drawbacks for its use in solar cells severely hamper the photovoltaic performance enhancement. In this work, a modified solution-based successive ionic layer adsorption and reaction (SILAR) utilizing mixed cationic precursors of Pb2+ and Cd2+ is explored, and such a scheme offers two benefits, band-structure tailoring and surface passivation. In-situ deposited CdS suppresses the excessive growth of PbS in the mesopores, thereby facilitating the favorable electron injection from PbS to TiO2 in view of the up-shifted CB level of QDs; the intimate interpenetration of two sulfides with each other leads to superior passivation of trap state defects on PbS, which suppresses the interfacial charge recombination. With the construction of photovoltaics based on such a hybrid (Pb,Cd)S/CdS configuration, impressive power conversion efficiency up to 4.08% has been reached, outperforming that of the conventional PbS/CdS pattern (2.95%). This work highlights the great importance of band-structure tailoring and surface passivation for constructing highly efficient PbS QD photovoltaics.

Producer responsibility and recycling solar photovoltaic modules

International Nuclear Information System (INIS)

McDonald, N.C.; Pearce, J.M.

2010-01-01

Rapid expansion of the solar photovoltaic (PV) industry is quickly causing solar to play a growing importance in the energy mix of the world. Over the full life cycle, although to a smaller degree than traditional energy sources, PV also creates solid waste. This paper examines the potential need for PV recycling policies by analyzing existing recycling protocols for the five major types of commercialized PV materials. The amount of recoverable semiconductor material and glass in a 1 m 2 area solar module for the five types of cells is quantified both physically and the profit potential of recycling is determined. The cost of landfill disposal of the whole solar module, including the glass and semiconductor was also determined for each type of solar module. It was found that the economic motivation to recycle most PV modules is unfavorable without appropriate policies. Results are discussed on the need to regulate for appropriate energy and environmental policy in the PV manufacturing industry particularly for PV containing hazardous materials. The results demonstrate the need to encourage producer responsibility not only in the PV manufacturing sector but also in the entire energy industry.

Reflective photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Lentine, Anthony L.; Nielson, Gregory N.; Cruz-Campa, Jose Luis; Okandan, Murat; Goeke, Ronald S.

2018-03-06

A photovoltaic module includes colorized reflective photovoltaic cells that act as pixels. The colorized reflective photovoltaic cells are arranged so that reflections from the photovoltaic cells or pixels visually combine into an image on the photovoltaic module. The colorized photovoltaic cell or pixel is composed of a set of 100 to 256 base color sub-pixel reflective segments or sub-pixels. The color of each pixel is determined by the combination of base color sub-pixels forming the pixel. As a result, each pixel can have a wide variety of colors using a set of base colors, which are created, from sub-pixel reflective segments having standard film thicknesses.

Photovoltaic roofing tile systems

Science.gov (United States)

Melchior, B.

The integration of photovoltaic (PV) systems in architecture is discussed. A PV-solar roofing tile system with polymer concrete base; PV-roofing tile with elastomer frame profiles and aluminum profile frames; contact technique; and solar cell modules measuring technique are described. Field tests at several places were conducted on the solar generator, electric current behavior, battery station, electric installation, power conditioner, solar measuring system with magnetic bubble memory technique, data transmission via telephone modems, and data processing system. The very favorable response to the PV-compact system proves the commercial possibilities of photovoltaic integration in architecture.

Bulk photovoltaic effect in LiTaO3 : Fe crystals

International Nuclear Information System (INIS)

Karabekyan, S.I.; Odoulov, S.G.

1991-01-01

The bulk photovoltaic effect that arises in non centrosymmetric crystals is determined by the third rank tensor. In this work four independent components of photovoltaic tensor, responsible for 'linear' photovoltaic currents, are measured for the first time for LiTaO 3 : Fe crystals in the range of photon energy from 2.07 to 3.88 eV. The observed correlation of the spectral dependences of β 15 and β 22 components indicates common origin of the transverse photovoltaic currents in this material

Photovoltaic solar concentrator

Science.gov (United States)

Nielson, Gregory N.; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J.; Sanchez, Carlos Anthony; Clews, Peggy J.; Gupta, Vipin P.

2015-09-08

A process including forming a photovoltaic solar cell on a substrate, the photovoltaic solar cell comprising an anchor positioned between the photovoltaic solar cell and the substrate to suspend the photovoltaic solar cell from the substrate. A surface of the photovoltaic solar cell opposite the substrate is attached to a receiving substrate. The receiving substrate may be bonded to the photovoltaic solar cell using an adhesive force or a metal connecting member. The photovoltaic solar cell is then detached from the substrate by lifting the receiving substrate having the photovoltaic solar cell attached thereto and severing the anchor connecting the photovoltaic solar cell to the substrate. Depending upon the type of receiving substrate used, the photovoltaic solar cell may be removed from the receiving substrate or remain on the receiving substrate for use in the final product.

TH-C-19A-10: Systematic Evaluation of Photodetectors Performances for Plastic Scintillation Dosimetry

International Nuclear Information System (INIS)

Boivin, J; Beaulieu, L; Beddar, S; Guillemette, M

2014-01-01

Purpose: To assess and compare the performance of different photodetectors likely to be used in a plastic scintillation detector (PSD). Methods: The PSD consists of a 1 mm diameter, 10 mm long plastic scintillation fiber (BCF-60) which is optically coupled to a clear 10 m long optical fiber of the same diameter. A light-tight plastic sheath covers both fibers and the scintillator end is sealed. The clear fiber end is connected to one of the following six studied photodetectors: two polychromatic cameras (one with an optical lens and one with a fiber optic taper replacing the lens); a monochromatic camera with the same optical lens; a PIN photodiode; an avalanche photodiode (APD); and a photomultiplier tube (PMT). Each PSD is exposed to both low energy beams (120, 180, and 220 kVp) from an orthovoltage unit, and high energy beams (6 MV and 23 MV) from a linear accelerator. Various dose rates are explored to identify the photodetectors operating ranges and accuracy. Results: For all photodetectors, the relative uncertainty remains under 5 % for dose rates over 3 mGy/s. The taper camera collects four times more signal than the optical lens camera, although its standard deviation is higher since it could not be cooled. The PIN, APD and PMT have higher sensitivity, suitable for low dose rate and out-of-field dose monitoring. PMT's relative uncertainty remains under 1 % at the lowest dose rate achievable (50 μGy/s), suggesting optimal use for live dosimetry. Conclusion: A set of 6 photodetectors have been studied over a broad dose rate range at various energies. For dose rate above 3 mGy/s, the PIN diode is the most effective photodetector in term of performance/cost ratio. For lower dose rate, such as those seen in interventional radiology, PMTs are the optimal choice. FQRNT Doctoral Research Scholarship

Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

Science.gov (United States)

Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

2012-01-30

The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors

Directory of Open Access Journals (Sweden)

Changsong Chen

2018-01-01

Full Text Available The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO for ultraviolet (UV photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm−2, on/off current ratio of 3.01 × 104, and responsivity of 1.83 A·W−1 when a UV irradiation of 3.26 mW·cm−2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite.

UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors.

Science.gov (United States)

Chen, Changsong; Zhou, Peng; Wang, Na; Ma, Yang; San, Haisheng

2018-01-05

The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs) limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D) wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO) for ultraviolet (UV) photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm -2 , on/off current ratio of 3.01 × 10⁴, and responsivity of 1.83 A·W -1 when a UV irradiation of 3.26 mW·cm -2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite.

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

Energy Technology Data Exchange (ETDEWEB)

Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu [Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA (Puerto Rico); Aldalbahi, A. [Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

2016-08-15

High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes.

Science.gov (United States)

Lee, Jae Hyung; Lee, Won Woo; Yang, Dong Won; Chang, Won Jun; Kwon, Sun Sang; Park, Won Il

2018-04-25

Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film.

MATLAB Simulation of Photovoltaic and Photovoltaic/Thermal Systems Performance

Science.gov (United States)

Nasir, Farah H. M.; Husaini, Yusnira

2018-03-01

The efficiency of the photovoltaic reduces when the photovoltaic cell temperature increased due to solar irradiance. One solution is come up with the cooling system photovoltaic system. This combination is forming the photovoltaic-thermal (PV/T) system. Not only will it generate electricity also heat at the same time. The aim of this research is to focus on the modeling and simulation of photovoltaic (PV) and photovoltaic-thermal (PV/T) electrical performance by using single-diode equivalent circuit model. Both PV and PV/T models are developed in Matlab/Simulink. By providing the cooling system in PV/T, the efficiency of the system can be increased by decreasing the PV cell temperature. The maximum thermal, electrical and total efficiency values of PV/T in the present research are 35.18%, 15.56% and 50.74% at solar irradiance of 400 W/m2, mass flow rate of 0.05kgs-1 and inlet temperature of 25 °C respectively has been obtained. The photovoltaic-thermal shows that the higher efficiency performance compared to the photovoltaic system.

Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

International Nuclear Information System (INIS)

Zhou Hai; Fang Guojia; Liu Nishuang; Zhao Xingzhong

2011-01-01

Highlights: → Schottky barrier ultraviolet photodetectors were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. When annealing temperature was up to 300 deg. C, the performance of the PDs was improved with the great decrease of response and recovery times. → For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature. → The ratio of detectivity (D254* to D546*) was calculated as high as 103 for all PDs annealed at 300 deg. C and above. - Abstract: ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 deg. C and above. When annealing temperature was up to 300 o C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 deg. C. For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D 254 * to D 546 *) was calculated as high as 10 3 for all PDs annealed at 300 deg. C and above.

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

KAUST Repository

Detchprohm, T.

2016-11-05

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov (United States)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

Donor and Acceptor Polymers for Bulk Hetero Junction Solar Cell and Photodetector Applications

KAUST Repository

Cruciani, Federico

2018-04-01

Bulk heterojunction (BHJ) devices represent a very versatile family of organic cells for both the fields of solar energy conversion and photodetection. Organic photovoltaics (OPV) are an attractive alternative to their silicon-based counterparts because of their potential for low-cost roll-to-roll printing, and their intended application in light-weight mechanically conformable devices and in window-type semi-transparent PV modules. Of all proposed OPV candidates, polymer donor with different absorption range are especially promising when used in conjunction with complementary absorbing acceptor materials, like fullerene derivatives (PCBM), conjugated molecules or polymers, achieving nowadays power conversion efficiencies (PCEs) in the range of 10-13% and being a step closer to practical applications. Among the photodetectors (PD), low band gap polymer blended with PCBM decked out the attention, given their extraordinary range of detection from UV to IR and high detectivity values reached so far, compared to the inorganic devices. Since the research has been focused on the enhancement of those numbers for an effective commercialization of organic cells, the topic of the following thesis has been centered on the synthesis of different polymer structures with diverse absorption ranges, used as donor or acceptor, with emphasis on performance in various BHJ devices either for solar cells and photodetectors. In the first part, two new wide band gap polymers, used as donor material in BHJ devices blended with fullerene and small molecule acceptors, are presented. The PBDT_2FT and PBDTT_2FT have shown nice efficiencies from 7% to 9.8%. The device results are implemented with a morphology study and a specific application in a semi-transparent tandem device, reaching a record PCE of 5.4% for average level of transparency of 48%. In another section two new low band gap polymers (Eopt~ 1.26 eV) named DTP_2FBT and (Eopt~ 1.1 eV) named BDTT_BTQ are presented. While the DTP

Adaptive photodetectors for vibration monitoring

International Nuclear Information System (INIS)

Sokolov, I.A.

2003-01-01

We present characteristics of laser vibrometer using semiconductor GaAs and molecular SnS 2 adaptive photodetectors (AP) based on the effect of the non-steady-state photoelectromotive force. AP enable efficient direct conversion of high-frequency phase modulation of speckle-like optical wave reflected from the vibrating object into an output electrical signal with concomitant setting of optimal operation point of the interferometer and suppression of amplitude laser noise. The sensitivity of the setup is analyzed and further improvements in operation of AP are discussed

Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

Science.gov (United States)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

2017-09-01

SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.

Graphite/ZnO nanorods junction for ultraviolet photodetectors

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan; Verde, Maria

2015-01-01

Roč. 105, March 2015 (2015), s. 70-73 ISSN 0038-1101 R&D Projects: GA MŠk(CZ) LD14111 Institutional support: RVO:67985882 Keywords : ZnO nanorods * Graphite based junction * UV photodetector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.345, year: 2015

Pulsed laser illumination of photovoltaic cells

Science.gov (United States)

Yater, Jane A.; Lowe, Roland A.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic receivers to provide remote power. Both the radio-frequency (RF) and induction FEL produce pulsed rather than continuous output. In this work we investigate cell response to pulsed laser light which simulates the RF FEL format. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced compared to constant illumination at the same wavelength. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments indicates that the RF FEL pulse format yields more efficient photovoltaic conversion than does an induction FEL format.

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

Science.gov (United States)

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Added values of photovoltaic power systems

International Nuclear Information System (INIS)

2001-03-01

The structure, ownership and operation of electricity systems around the world are changing in response to industry restructuring, the availability of new technologies and increasing environmental awareness. At the same time, many countries have yet to provide basic energy services for their populations, particularly in areas not served by the electricity grid. Large-scale, central power generation and distribution which characterized the electricity industry for much of the 20 th century is being challenged by new technologies, which are cleaner, faster to deploy and better matched to local requirements. Higher values are being placed on ancillary services, such as power system reliability and voltage stability, so that a simple comparison of energy cost is no longer appropriate as a measure of competitiveness. Solar photovoltaic electricity is unique amongst the new energy sources for the wide range of energy and non-energy benefits which can be provided, while the use of photovoltaic power systems as an integral part of a building provides the greatest opportunity for exploiting non-energy benefits and for adding value to the photovoltaic power system. This report documents the potential added values or non-energy benefits photovoltaic power systems can provide, the current state of market development and the key barriers faced by renewable energy technologies generally and photovoltaic power systems in particular. Means by which non-energy benefits may be used to overcome barriers to the use of photovoltaic power systems are then discussed, with specific attention to the use of building integrated photovoltaics. (author)

Added values of photovoltaic power systems

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-15

The structure, ownership and operation of electricity systems around the world are changing in response to industry restructuring, the availability of new technologies and increasing environmental awareness. At the same time, many countries have yet to provide basic energy services for their populations, particularly in areas not served by the electricity grid. Large-scale, central power generation and distribution which characterized the electricity industry for much of the 20{sup th} century is being challenged by new technologies, which are cleaner, faster to deploy and better matched to local requirements. Higher values are being placed on ancillary services, such as power system reliability and voltage stability, so that a simple comparison of energy cost is no longer appropriate as a measure of competitiveness. Solar photovoltaic electricity is unique amongst the new energy sources for the wide range of energy and non-energy benefits which can be provided, while the use of photovoltaic power systems as an integral part of a building provides the greatest opportunity for exploiting non-energy benefits and for adding value to the photovoltaic power system. This report documents the potential added values or non-energy benefits photovoltaic power systems can provide, the current state of market development and the key barriers faced by renewable energy technologies generally and photovoltaic power systems in particular. Means by which non-energy benefits may be used to overcome barriers to the use of photovoltaic power systems are then discussed, with specific attention to the use of building integrated photovoltaics. (author)

Sensitive, Fast, and Stable Perovskite Photodetectors Exploiting Interface Engineering

KAUST Repository

Sutherland, Brandon R.

2015-08-19

© 2015 American Chemical Society. Organometallic halide perovskites are a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. They have seen rapid strides toward enabling efficient third-generation solar cell technologies. Here, we report the first material-tailoring of TiO2/perovskite/spiro-OMeTAD junction-based photodiodes toward applications in photodetection, a field in need of fast, sensitive, low-cost, spectrally tunable materials that offer facile integration across a broad range of substrates. We report photodetection that exhibits 1 μs temporal response, and we showcase stable operation in the detection of over 7 billion transient light pulses through a continuous pulsed-illumination period. The perovskite diode photodetector has a peak responsivity approaching 0.4 A W^-1 at 600 nm wavelength, which is superior to red light detection in crystalline silicon photodiodes used in commercial image sensors. Only by developing a composite Al2O3/PCBM front contact interface layer were we able to stabilize device operation in air, reduce dark current, and enhance the responsivity in the low-bias regime to achieve an experimentally measured specific detectivity of 10¹² Jones.

Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors.

Science.gov (United States)

Nasiri, Noushin; Bo, Renheng; Wang, Fan; Fu, Lan; Tricoli, Antonio

2015-08-05

A hierarchical nano- and microstructured morphology for visible-blind UV photo-detectors is developed, which provides record-high milliampere photocurrents, nanoampere dark currents, and excellent selectivity to ultralow UV light intensities. This is a significant step toward the integration of high-performance UV photodetectors in wearable devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Color selective photodetector and methods of making

Science.gov (United States)

Walker, Brian J.; Dorn, August; Bulovic, Vladimir; Bawendi, Moungi G.

2013-03-19

A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.

ZnO UV photodetector with controllable quality factor and photosensitivity

Directory of Open Access Journals (Sweden)

L. C. Campos

2013-02-01

Full Text Available ZnO nanowires have an enormous potential for applications as ultra-violet (UV photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the relative photosensitivity and quality factor (Q factor of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence.

Photovoltaic module and laminate

Science.gov (United States)

Bunea, Gabriela E.; Kim, Sung Dug; Kavulak, David F.J.

2018-04-10

A photovoltaic module is disclosed. The photovoltaic module has a first side directed toward the sun during normal operation and a second, lower side. The photovoltaic module comprises a perimeter frame and a photovoltaic laminate at least partially enclosed by and supported by the perimeter frame. The photovoltaic laminate comprises a transparent cover layer positioned toward the first side of the photovoltaic module, an upper encapsulant layer beneath and adhering to the cover layer, a plurality of photovoltaic solar cells beneath the upper encapsulant layer, the photovoltaic solar cells electrically interconnected, a lower encapsulant layer beneath the plurality of photovoltaic solar cells, the upper and lower encapsulant layers enclosing the plurality of photovoltaic solar cells, and a homogenous rear environmental protection layer, the rear environmental protection layer adhering to the lower encapsulant layer, the rear environmental protection layer exposed to the ambient environment on the second side of the photovoltaic module.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers

Science.gov (United States)

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A. Giles; Linfield, Edmund H.; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-01

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

Science.gov (United States)

Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

2015-10-19

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

International Nuclear Information System (INIS)

Seyedi, M. A.; Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.

2013-01-01

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields 2 , which shows a strong possibility for high-speed applications with a broad area device

2D Organic-Inorganic Hybrid Thin Films for Flexible UV-Visible Photodetectors

KAUST Repository

Velusamy, Dhinesh Babu

2017-02-13

Flexible 2D inorganic MoS and organic g-CN hybrid thin film photodetectors with tunable composition and photodetection properties are developed using simple solution processing. The hybrid films fabricated on paper substrate show broadband photodetection suitable for both UV and visible light with good responsivity, detectivity, and reliable and rapid photoswitching characteristics comparable to monolayer devices. This excellent performance is retained even after the films are severely deformed at a bending radius of ≈2 mm for hundreds of cycles. The detailed charge transfer and separation processes at the interface between the 2D materials in the hybrid films are confirmed by femtosecond transient absorption spectroscopy with broadband capability.

Photovoltaic module and interlocked stack of photovoltaic modules

Science.gov (United States)

Wares, Brian S.

2012-09-04

One embodiment relates to an arrangement of photovoltaic modules configured for transportation. The arrangement includes a plurality of photovoltaic modules, each photovoltaic module including a frame having at least a top member and a bottom member. A plurality of alignment features are included on the top member of each frame, and a plurality of alignment features are included on the bottom member of each frame. Adjacent photovoltaic modules are interlocked by the alignment features on the top member of a lower module fitting together with the alignment features on the bottom member of an upper module. Other embodiments, features and aspects are also disclosed.

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

KAUST Repository

Detchprohm, T.; Li, Xiaohang; Shen, S.-C.; Yoder, P.D.; Dupuis, R.D.

2016-01-01

-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic

All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

DEFF Research Database (Denmark)

Taghizadeh, Alireza; Rasoulzadeh Zali, Aref; Chung, Il-Sug

2017-01-01

We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelen......We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered...

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

A photovoltaic module

DEFF Research Database (Denmark)

2013-01-01

The present invention relates to a photovoltaic module comprising a carrier substrate, said carrier substrate carrying a purely printed structure comprising printed positive and negative module terminals, a plurality of printed photovoltaic cell units each comprising one or more printed...... photovoltaic cells, wherein the plurality of printed photovoltaic cell units are electrically connected in series between the positive and the negative module terminals such that any two neighbouring photovoltaic cell units are electrically connected by a printed interconnecting electrical conductor....... The carrier substrate comprises a foil and the total thickness of the photovoltaic module is below 500 [mu]m. Moreover, the nominal voltage level between the positive and the negative terminals is at least 5 kV DC....

Photovoltaic device

Energy Technology Data Exchange (ETDEWEB)

Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

2017-03-21

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

Photovoltaic device

Science.gov (United States)

Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

2015-06-02

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

Organic photovoltaics

DEFF Research Database (Denmark)

Demming, Anna; Krebs, Frederik C; Chen, Hongzheng

2013-01-01

's supply, even at our increasingly ravenous rate of global energy consumption [1]. But it's not what you have got it's what you do with it. Hence the intense focus on photovoltaic research to find more efficient ways to harness energy from the Sun. Recently much of this research has centred on organic...... solar cells since they offer simple, low-cost, light-weight and large-area flexible photovoltaic structures. This issue with guest editors Frederik C Krebs and Hongzheng Chen focuses on some of the developments at the frontier of organic photovoltaic technology. Improving the power conversion efficiency...... of organic photovoltaic systems, while maintaining the inherent material, economic and fabrication benefits, has absorbed a great deal of research attention in recent years. Here significant progress has been made with reports now of organic photovoltaic devices with efficiencies of around 10%. Yet operating...

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment.

Science.gov (United States)

Jo, Seo-Hyeon; Park, Hyung-Youl; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Choi, Seunghyuk; Kim, Minwoo; Park, Yongkook; Lee, Jaehyeong; Song, Young Jae; Lee, Sungjoo; Park, Jin-Hong

2016-08-01

The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photovoltaic barometer

International Nuclear Information System (INIS)

2014-01-01

The global solar photovoltaic market enjoyed a strong revival in 2013. Preliminary estimates put it in excess of 37 GWp, compared to 30 GWp in 2012 and 2011. The solar photovoltaic sector led the annual installed capacity ratings for renewable energies, taking worldwide capacity up to 137 GWp by the end of the year which means a 35% year-on-year increase. At global level the high growth markets - China, Japan and America - contrast sharply with the contracting European Union market. The strong recovery of the global photovoltaic market is due to the drop in module prices which in some zones has dropped below the conventional electricity price. In the E.U, in 2013 the photovoltaic electricity reached 80.2 TWh while the capacity connected during this year was 9922.2 MWp. Concerning the capacity connected in 2013 the 2 main contributors in Europe are Germany (3310.0 MWc) and Italy (1462.0 MWc). These 2 countries represent also 68% of the cumulated and connected capacity in Europe. All along the article various charts and tables give the figures of the photovoltaic capacity per inhabitant for each E.U country in 2013, the electricity production from photovoltaic power for each E.U country, and the main photovoltaic module manufacturers in 2013 worldwide reporting production and turnover

Photovoltaic device

Science.gov (United States)

Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

2015-09-01

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

Capacitively coupled pickup in MCP-based photodetectors using a conductive metallic anode

Energy Technology Data Exchange (ETDEWEB)

Angelico, E.; Seiss, T. [Enrico Fermi Institute, University of Chicago, 5640 S Ellis Ave, Chicago, IL 60637 (United States); Adams, B. [Incom, Inc., 294 SouthBridge Rd, Charlton, Massachusetts 01507 (United States); Elagin, A.; Frisch, H.; Spieglan, E. [Enrico Fermi Institute, University of Chicago, 5640 S Ellis Ave, Chicago, IL 60637 (United States)

2017-02-21

We have designed and tested a robust 20×20 cm{sup 2} thin metal film internal anode capacitively coupled to an external array of signal pads or micro-strips for use in fast microchannel plate photodetectors. The internal anode, in this case a 10 nm-thick NiCr film deposited on a 96% pure Al{sub 2}O{sub 3} 3 mm-thick ceramic plate and connected to HV ground, provides the return path for the electron cascade charge. The multi-channel pickup array consists of a printed-circuit card or glass plate with metal signal pickups on one side and the signal ground plane on the other. The pickup can be put in close proximity to the bottom outer surface of the sealed photodetector, with no electrical connections through the photodetector hermetic vacuum package other than a single ground connection to the internal anode. Two pickup patterns were tested using a small commercial MCP-PMT as the signal source: 1) parallel 50 Ω 25-cm-long micro-strips with an analog bandwidth of 1.5 GHz, and 2) a 20×20 cm{sup 2} array of 2-dimensional square ‘pads’ with sides of 1.27 cm or 2.54 cm. The rise-time of the fast input pulse is maintained for both pickup patterns. For the pad pattern, we observe 80% of the directly coupled amplitude. For the strip pattern we measure 34% of the directly coupled amplitude on the central strip of a broadened signal. The physical decoupling of the photodetector from the pickup pattern allows easy customization for different applications while maintaining high analog bandwidth.

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

International Nuclear Information System (INIS)

Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

2015-01-01

Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

Highly sensitive MoS2 photodetectors with graphene contacts

Science.gov (United States)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Controllable synthesis of p-type Cu{sub 2}S nanowires for self-driven NIR photodetector application

Energy Technology Data Exchange (ETDEWEB)

Wu, Chun-Yan, E-mail: cywu@hfut.edu.cn; Pan, Zhi-Qiang; Liu, Zhu; Wang, You-Yi [Hefei University of Technology, School of Electronic Science and Applied Physics (China); Liang, Feng-Xia [Hefei University of Technology, School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices (China); Yu, Yong-Qiang; Wang, Li; Luo, Lin-Bao, E-mail: luolb@hfut.edu.cn [Hefei University of Technology, School of Electronic Science and Applied Physics (China)

2017-02-15

Face-centered cubic Cu{sub 2}S nanowires with length of up to 50 μm and diameters in the range of 100–500 nm are synthesized on Si substrates through the chemical vapor deposition method using a mixed gas of Ar and H{sub 2} as the carrier gas under a chamber pressure of about 700 Torr. It was found that the growth of quasi 1D nanostructure followed a typical vapor-liquid-solid (VLS) mechanism in which the element Cu was reduced by H{sub 2} as the catalyst. The as-synthesized Cu{sub 2}S nanowires exhibited typical p-type semiconducting characteristics with a conductivity of about 600 S cm{sup −1} and a hole mobility (μ{sub h}) of about 72 cm{sup 2} V{sup −1} s{sup −1}. Further study reveals that p-Cu{sub 2}S nanowires/n-Si heterojunction exhibits distinct rectifying characteristics with a turn-on voltage of ~0.6 V and a rectification ratio of ~300 at ±1 V in the dark and a pronounced photovoltaic behavior with an open circuit voltage (V{sub oc}) of 0.09 V and a short circuit current (I{sub sc}) of 65 nA when illuminated by the NIR light (790 nm, 0.35 mW cm{sup −1}), giving rise to a responsivity (R) about 0.8 mA W{sup −1} and specific detectivity (D*) 6.7 × 10{sup 10} cm Hz{sup 1/2} W{sup −1} at zero bias, which suggests the potential of as-synthesized Cu{sub 2}S nanowires applied in the field of self-driven NIR photodetector.

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

Energy Technology Data Exchange (ETDEWEB)

Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

2013-12-16

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

Science.gov (United States)

Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

2014-12-23

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

International Nuclear Information System (INIS)

De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

2010-01-01

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Latest generation of ASICs for photodetector readout

Science.gov (United States)

Seguin-Moreau, N.

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the "ROC" family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the "ROC" chips.

Latest generation of ASICs for photodetector readout

Energy Technology Data Exchange (ETDEWEB)

Seguin-Moreau, N., E-mail: seguin@lal.in2p3.fr [Laboratoire de l’Accélérateur Linéaire, IN2P3-CNRS, Université Paris-Sud, Bâtiment 200, 91898 Orsay Cedex (France)

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the “ROC” family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the “ROC” chips.

Latest generation of ASICs for photodetector readout

International Nuclear Information System (INIS)

Seguin-Moreau, N.

2013-01-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the “ROC” family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the “ROC” chips

Solution-Processed Light Sensors and Photovoltaics

KAUST Repository

Barkhouse, D. Aaron R.

2010-04-01

Solution processed solar cells and photodetectors have been investigated extensively due to their potential for low-cost, high throughput fabrication. Colloidal quantum dots (CQDs) and conjugated polymers are two of the most promising materials systems for these applications, due to their processibility and their tunability, the latter achieved by varying their size or molecular structure. Several breakthroughs in the past year highlight the rapid progress that continues to be made in understanding these materials and engineering devices to realize their full potential. CQD photodiodes, which had already shown greater detectivity than commercially available photodetectors, have now reached MHz bandwidths. Polymer solar cells with near-perfect internal quantum efficiencies have been realized, and improved 3-D imaging of these systems has allowed theorists to link structure and function quantitatively. Organic photodetectors with sensitivities at wavelengths longer than 1 μm have been achieved, and multiexciton generation has been unambiguously observed in a functioning CQD device, indicating its viability in further improving detector sensitivity. © 2010 IEEE.

Vacuum-Ultraviolet Photovoltaic Detector.

Science.gov (United States)

Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

2018-01-23

Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

Photocurrent of Photovoltaic Cells

Science.gov (United States)

Peeler, Seth; McIntyre, Max; Cossel, Raquel; Bowser, Chris; Tzolov, Marian

Photovoltaic cells can be used to harness clean, renewable energy from light. Examined in this project were photovoltaic cells based on a bulk heterojunction between PCPDTBT and PCBM sandwiched between an ITO anode and an Al cathode. Current-voltage characteristics and impedance spectra for multiple photovoltaic devices were taken under varying DC electrical bias and different level of illumination. This data was interpreted in terms of an equivalent circuit with linear elements, e.g. capacitance, series resistance, and parallel resistance. A physical interpretation of each circuit element will be presented. The spectral response of the devices was characterized by optical transmission and photocurrent spectroscopy using a spectrometer in the spectral range from 300 to 900 nm. The DC measurements confirmed that the devices are electrically rectifying. The AC measurements allowed modeling of the devices as a dielectric between two electrodes with injection current passing through it. The characteristic peaks for both PCBDTBT and PCBM are clearly visible in both the photocurrent and transmission data. The good correlation between the photocurrent and transmission data indicates photocurrent generation due to absorption in both materials constituting the heterojunction.

Photovoltaic Cells

OpenAIRE

Karolis Kiela

2012-01-01

The article deals with an overview of photovoltaic cells that are currently manufactured and those being developed, including one or several p-n junction, organic and dye-sensitized cells using quantum dots. The paper describes the advantages and disadvantages of various photovoltaic cells, identifies the main parameters, explains the main reasons for the losses that may occur in photovoltaic cells and looks at the ways to minimize them.Article in Lithuanian

Photovoltaic Powering And Control System For Electrochromic Windows

Science.gov (United States)

Schulz, Stephen C.; Michalski, Lech A.; Volltrauer, Hermann N.; Van Dine, John E.

2000-04-25

A sealed insulated glass unit is provided with an electrochromic device for modulating light passing through the unit. The electrochromic device is controlled from outside the unit by a remote control electrically unconnected to the device. Circuitry within the unit may be magnetically controlled from outside. The electrochromic device is powered by a photovoltaic cells. The photovoltaic cells may be positioned so that at least a part of the light incident on the cell passes through the electrochromic device, providing a form of feedback control. A variable resistance placed in parallel with the electrochromic element is used to control the response of the electrochromic element to changes in output of the photovoltaic cell.

Photovoltaic barometer

International Nuclear Information System (INIS)

2013-01-01

After the euphoria of 2011, the European Union's photovoltaic market slowed right down in 2012. EurObserv'ER puts newly connected capacity in 2012 at 16.5 GWp compared to 22 GWp in 2011, which is a 25% drop. At global level the market generally held up, with just over 30 GWp installed, bolstered by the build-up of the American and Asian markets. The photovoltaic electricity generated in the EU reached 68.1 TWh in 2012. The article begins with the description of the worldwide situation of photovoltaic electricity, then details the situation for each EU member with the help of tables and charts and ends with the state of photovoltaic industry at the world scale

4th International Conference on New Photo-Detectors

CERN Document Server

2016-01-01

The purpose of this Conference is to discuss new ideas and recent developments in photo-detectors and their applications in various fields: high energy physics, neutrino physics, particle and astroparticle physics, nuclear physics, nuclear medicine and industry. The main topics of the Conference relate to APD, SiPM, PMT, Hybrid PMT, MCP-PMT, and electronics: front-end and readout of large systems.

Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetector

International Nuclear Information System (INIS)

Ismail, Raid A; Al-Naimi, Ala; Al-Ani, Alaa A

2008-01-01

ZnO:Al/c-Si (1 1 1) isotype heterojunction photodetectors were fabricated by a chemical spray pyrolysis technique. High responsivity and good junction characteristics were obtained after post-deposition rapid thermal annealing (RTA). Dark and illuminated I–V characteristics were measured and analyzed. The ideality factor was deduced from I–V characteristics and found to be 1.3 after RTA. C–V measurements revealed that the junction was abrupt type. The energyband diagram, based on the Anderson model, was constructed from the electrical properties of the junction. Good photoresponses in UV and visible regions with responsivity were around 0.1 A W −1 and 0.47 A W −1 , respectively. The rise time of the detector was improved after RTA and found to be 50 ns. These results suggest that the Al dopant could be a good choice to fabricate the doped ZnO/Si devices for photodetection and other optoelectronic applications. We describe here the fabrication process and optoelectronic characteristics of the photodetector

Photovoltaic mounting/demounting unit

DEFF Research Database (Denmark)

2014-01-01

The present invention relates to a photovoltaic arrangement comprising a photovoltaic assembly comprising a support structure defining a mounting surface onto which a photovoltaic module is detachably mounted; and a mounting/demounting unit comprising at least one mounting/demounting apparatus...... which when the mounting/demounting unit is moved along the mounting surface, causes the photovoltaic module to be mounted or demounted to the support structure; wherein the photovoltaic module comprises a carrier foil and wherein a total thickness of the photo voltaic module is below 500 muiotaeta....... The present invention further relates to an associated method for mounting/demounting photovoltaic modules....

Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

Science.gov (United States)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.

Applications of photovoltaics

International Nuclear Information System (INIS)

Pearsall, N.

1999-01-01

The author points out that although photovoltaics can be used for generating electricity for the same applications as many other means of generation, they really come into their own where disadvantages associated with an intermittent unpredictable supply are not severe. The paper discusses the advantages and disadvantages to be taken into account when considering a photovoltaic power system. Five main applications, based on the system features, are listed and explained. They are: consumer, professional, rural electrification, building-integrated, centralised grid connected and space power. A brief history of the applications of photovoltaics is presented with statistical data on the growth of installed capacity since 1992. The developing market for photovoltaics is discussed together with how environmental issues have become a driver for development of building-integrated photovoltaics

Overvoltage Mitigation Using Coordinated Control of Demand Response and Grid-tied Photovoltaics

DEFF Research Database (Denmark)

Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Pillai, Jayakrishnan Radhakrishna

2015-01-01

Overvoltages in low voltage distribution grids with high solar photovoltaic (PV) integration are usually alleviated by implementing various active/reactive power control techniques. As those methods create revenue loss or inverter cost increase to PV owners, a coordinated control of load demand...... and the PVs, considering electric vehicles (EVs) as potential demand response resource, is proposed in this study to alleviate the overvoltages. A two-stage control is designed to comprehend the proposed coordinated control such that a centralized stage periodically determines optimum operating set......-points for PVs/EVs and a decentralized stage adaptively control the PVs/EVs in real-time. To demonstrate effectiveness of the proposed approach, simulations are performed in a typical 0.4 kV/400 kVA Danish distribution network containing 45 detached residential consumers. The presented method demonstrates better...

Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

Energy Technology Data Exchange (ETDEWEB)

Starkenburg, Daken J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Johns, Paul M. [Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Detection Systems Group, Pacific Northwest National Laboratory, Richland, Washington 99354, USA; Baciak, James E. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Nino, Juan C. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Xue, Jiangeng [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

2017-12-14

Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.28 µGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

Science.gov (United States)

Starkenburg, Daken J.; Johns, Paul M.; Baciak, James E.; Nino, Juan C.; Xue, Jiangeng

2017-12-01

Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.18 μGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

Silver nanowires-templated metal oxide for broadband Schottky photodetector

Energy Technology Data Exchange (ETDEWEB)

Patel, Malkeshkumar; Kim, Hong-Sik; Kim, Joondong, E-mail: joonkim@inu.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772 (Korea, Republic of); Park, Hyeong-Ho [Applied Device and Material Lab., Device Technology Division, Korea Advanced Nano Fab Center (KANC), Suwon 443270 (Korea, Republic of)

2016-04-04

Silver nanowires (AgNWs)-templated transparent metal oxide layer was applied for Si Schottky junction device, which remarked the record fastest photoresponse of 3.4 μs. Self-operating AgNWs-templated Schottky photodetector showed broad wavelength photodetection with high responsivity (42.4 A W{sup −1}) and detectivity (2.75 × 10{sup 15} Jones). AgNWs-templated indium-tin-oxide (ITO) showed band-to-band excitation due to the internal photoemission, resulting in significant carrier collection performances. Functional metal oxide layer was formed by AgNWs-templated from ITO structure. The grown ITO above AgNWs has a cylindrical shape and acts as a thermal protector of AgNWs for high temperature environment without any deformation. We developed thermal stable AgNWs-templated transparent oxide devices and demonstrated the working mechanism of AgNWs-templated Schottky devices. We may propose the high potential of hybrid transparent layer design for various photoelectric applications, including solar cells.

Customized color patterning of photovoltaic cells

Science.gov (United States)

Cruz-Campa, Jose Luis; Nielson, Gregory N.; Okandan, Murat; Lentine, Anthony L.; Resnick, Paul J.; Gupta, Vipin P.

2016-11-15

Photovoltaic cells and photovoltaic modules, as well as methods of making and using such photovoltaic cells and photovoltaic modules, are disclosed. More particularly, embodiments of the photovoltaic cells selectively reflect visible light to provide the photovoltaic cells with a colorized appearance. Photovoltaic modules combining colorized photovoltaic cells may be used to harvest solar energy while providing a customized appearance, e.g., an image or pattern.

Photovoltaic effect and photopolarization in Pb [(Mg1/3Nb2/3) 0.68Ti0.32] O3 crystal

Science.gov (United States)

Makhort, A. S.; Chevrier, F.; Kundys, D.; Doudin, B.; Kundys, B.

2018-01-01

Ferroelectric materials are an alternative to semiconductor-based photovoltaics and offer the advantage of above bandgap photovoltage generation. However, there are few known compounds, and photovoltaic efficiencies remain low. Here, we report the discovery of a photovoltaic effect in undoped lead magnesium niobate-lead titanate crystal and a significant improvement in the photovoltaic response under suitable electric fields and temperatures. The photovoltaic effect is maximum near the electric-field-driven ferroelectric dipole reorientation, and increases threefold near the Curie temperature (Tc). Moreover, at ferroelectric saturation, the photovoltaic response exhibits clear remanent and transient effects. The transient-remanent combinations together with electric and thermal tuning possibilities indicate photoferroelectric crystals as emerging elements for photovoltaics and optoelectronics, relevant to all-optical information storage and beyond.

Performance Characterization of Dye-Sensitized Photovoltaics under Indoor Lighting.

Science.gov (United States)

Chen, Chia-Yuan; Jian, Zih-Hong; Huang, Shih-Han; Lee, Kun-Mu; Kao, Ming-Hsuan; Shen, Chang-Hong; Shieh, Jia-Min; Wang, Chin-Li; Chang, Chiung-Wen; Lin, Bo-Zhi; Lin, Ching-Yao; Chang, Ting-Kuang; Chi, Yun; Chi, Cheng-Yu; Wang, Wei-Ting; Tai, Yian; Lu, Ming-De; Tung, Yung-Liang; Chou, Po-Ting; Wu, Wen-Ti; Chow, Tahsin J; Chen, Peter; Luo, Xiang-Hao; Lee, Yuh-Lang; Wu, Chih-Chung; Chen, Chih-Ming; Yeh, Chen-Yu; Fan, Miao-Syuan; Peng, Jia-De; Ho, Kuo-Chuan; Liu, Yu-Nan; Lee, Hsiao-Yi; Chen, Chien-Yu; Lin, Hao-Wu; Yen, Chia-Te; Huang, Yu-Ching; Tsao, Cheng-Si; Ting, Yu-Chien; Wei, Tzu-Chien; Wu, Chun-Guey

2017-04-20

Indoor utilization of emerging photovoltaics is promising; however, efficiency characterization under room lighting is challenging. We report the first round-robin interlaboratory study of performance measurement for dye-sensitized photovoltaics (cells and mini-modules) and one silicon solar cell under a fluorescent dim light. Among 15 research groups, the relative deviation in power conversion efficiency (PCE) of the samples reaches an unprecedented 152%. On the basis of the comprehensive results, the gap between photometry and radiometry measurements and the response of devices to the dim illumination are identified as critical obstacles to the correct PCE. Therefore, we use an illuminometer as a prime standard with a spectroradiometer to quantify the intensity of indoor lighting and adopt the reverse-biased current-voltage (I-V) characteristics as an indicator to qualify the I-V sampling time for dye-sensitized photovoltaics. The recommendations can brighten the prospects of emerging photovoltaics for indoor applications.

Photovoltaic energy barometer

International Nuclear Information System (INIS)

Anon.

2007-01-01

The european photovoltaic market once again reached the heights in 2006, thanks to the dynamism of the German market. White paper objectives have thus been fulfilled four years ahead of schedule. The european photovoltaic sector remains however very heterogeneous with both an ultra-dominant German market (estimated at 1150 MWp in 2006) and other countries of the European Union that vary from a few kWP to a few dozen MWp. This analysis provides statistical data on the market, the capacity installed during 2005 and 2006, the photovoltaic parks and the evolution of the photovoltaic cell production. (A.L.B.)

Demand response impacts on off-grid hybrid photovoltaic-diesel generator microgrids

Directory of Open Access Journals (Sweden)

Aaron St. Leger

2015-08-01

Full Text Available Hybrid microgrids consisting of diesel generator set(s and converter based power sources, such as solar photovoltaic or wind sources, offer an alternative to generator based off-grid power systems. The hybrid approach has been shown to be economical in many off-grid applications and can result in reduced generator operation, fuel requirements, and maintenance. However, the intermittent nature of demand and renewable energy sources typically require energy storage, such as batteries, to properly operate the hybrid microgrid. These batteries increase the system cost, require proper operation and maintenance, and have been shown to be unreliable in case studies on hybrid microgrids. This work examines the impacts of leveraging demand response in a hybrid microgrid in lieu of energy storage. The study is performed by simulating two different hybrid diesel generator—PV microgrid topologies, one with a single diesel generator and one with multiple paralleled diesel generators, for a small residential neighborhood with varying levels of demand response. Various system designs are considered and the optimal design, based on cost of energy, is presented for each level of demand response. The solar resources, performance of solar PV source, performance of diesel generators, costs of system components, maintenance, and operation are modeled and simulated at a time interval of ten minutes over a twenty-five year period for both microgrid topologies. Results are quantified through cost of energy, diesel fuel requirements, and utilization of the energy sources under varying levels of demand response. The results indicate that a moderate level of demand response can have significant positive impacts to the operation of hybrid microgrids through reduced energy cost, fuel consumption, and increased utilization of PV sources.

Optimal stochastic short-term thermal and electrical operation of fuel cell/photovoltaic/battery/grid hybrid energy system in the presence of demand response program

International Nuclear Information System (INIS)

Majidi, Majid; Nojavan, Sayyad; Zare, Kazem

2017-01-01

Highlights: • On-grid photovoltaic/battery/fuel cell system is considered as hybrid system. • Thermal and electrical operation of hybrid energy system is studied. • Hybrid energy system is used to reduce dependency on upstream grid for load serving. • Demand response program is proposed to manage the electrical load. • Demand response program is proposed to reduce hybrid energy system’s operation cost. - Abstract: In this paper, cost-efficient operation problem of photovoltaic/battery/fuel cell hybrid energy system has been evaluated in the presence of demand response program. Each load curve has off-peak, mid and peak time periods in which the energy prices are different. Demand response program transfers some amount of load from peak periods to other periods to flatten the load curve and minimize total cost. So, the main goal is to meet the energy demand and propose a cost-efficient approach to minimize system’s total cost including system’s electrical cost and thermal cost and the revenue from exporting power to the upstream grid. A battery has been utilized as an electrical energy storage system and a heat storage tank is used as a thermal energy storage system to save energy in off-peak and mid-peak hours and then supply load in peak hours which leads to reduction of cost. The proposed cost-efficient operation problem of photovoltaic/battery/fuel cell hybrid energy system is modeled by a mixed-integer linear program and solved by General algebraic modeling system optimization software under CPLEX solver. Two case studies are investigated to show the effects of demand response program on reduction of total cost.

Tetrafullerene conjugates for all-organic photovoltaics

NARCIS (Netherlands)

Fernández, G.; Sánchez, L.; Veldman, D.; Wienk, M.M.; Atienza, C.M.; Guldi, D.M.; Janssen, R.A.J.; Martin, N.

2008-01-01

The synthesis of two new tetrafullerene nanoconjugates in which four C60 units are covalently connected through different -conjugated oligomers (oligo(p-phenylene ethynylene) and oligo(p-phenylene vinylene)) is described. The photovoltaic (PV) response of these C60-based conjugates was evaluated by

Thermionic photovoltaic energy converter

Science.gov (United States)

Chubb, D. L. (Inventor)

1985-01-01

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

Transparent ultraviolet photovoltaic cells.

Science.gov (United States)

Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

2016-02-15

Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

Three-phase Photovoltaic Systems

DEFF Research Database (Denmark)

Kerekes, Tamas; Sera, Dezso; Máthé, Lászlo

2015-01-01

, detailing the different photovoltaic inverter structures and topologies as well as discussing the different control layers within a grid-connected photovoltaic plant. Modulation schemes for various photovoltaic inverter topologies, grid synchronization, current control, active and reactive power control......Photovoltaic technology has experienced unprecedented growth in the last two decades, transforming from mainly off-grid niche generation to a major renewable energy technology, reaching approximately 180 GW of capacity worldwide at the end of 2014. Large photovoltaic power plants interfacing...... the grid through a three-phase power electronic converter are now well on the way to becoming a major player in the power system in many countries. Therefore, this article gives an overview of photovoltaic systems with a focus on three-phase applications, presenting these both from a hardware point of view...

MIS photodetectors on intrinsic semiconductors for thermal infrared imagery - A design aid for focal plane matrices

Science.gov (United States)

Farre, J.

1980-12-01

The physical mechanisms determining the operational behavior of an MIS photodetector for thermal infrared imagery based on a two-dimensional matrix of intrinsic semiconductors constituting a charge injection device are examined. The general principles of a thermal infrared imagery system composed of radiation source, atmosphere, sensor system with entrance optics, detector and environment, and data processing means are introduced, and the parameters of the system as a whole influencing detector characteristics are indicated. The properties of an ideal and a real MIS photodetector are discussed, with attention given to the physical properties of narrow bandgap materials such as InSb, operational properties in the dynamic regime, the carrier tunneling component and experimentally observed instability phenomena. The matrix organization of MIS photodetectors is then considered, with particular attention given to a simple model of charge transfer between two electrodes and the two principal reading mechanisms: charge injection and the floating potential method.

Flexo-photovoltaic effect.

Science.gov (United States)

Yang, Ming-Min; Kim, Dong Jik; Alexe, Marin

2018-04-19

It is highly desirable to discover photovoltaic mechanisms that enable a higher efficiency of solar cells. Here, we report that the bulk photovoltaic effect, which is free from the thermodynamic Shockley-Queisser limit but usually manifested only in noncentrosymmetric (piezoelectric or ferroelectric) materials, can be realized in any semiconductor, including silicon, by mediation of flexoelectric effect. We introduce strain gradients using either an atomic force microscope or a micron-scale indentation system, creating giant photovoltaic currents from centrosymmetric single crystals of SrTiO 3 , TiO 2 , and Si. This strain-gradient-induced bulk photovoltaic effect, which we call the flexo-photovoltaic effect, functions in the absence of a p - n junction. This finding may extend present solar cell technologies by boosting the solar energy conversion efficiency from a wide pool of established semiconductors. Copyright © 2018, American Association for the Advancement of Science.

Infrared photodetectors based on reduced graphene oxide nanoparticles and graphene oxide

Science.gov (United States)

Ahmad, H.; Tajdidzadeh, M.; Thambiratnam, K.; Yasin, M.

2018-06-01

Two photodiode (PD) designs incorporating graphene oxide (GO) and reduced graphene oxide (rGO) are proposed and fabricated. Both PDs have 50 mm thick silver electrodes deposited on the active area, and another electrode consisting of either GO or rGO nanoparticles (NPs). The GO and rGO NPs are deposited onto the p-type silicon substrate by the drop casting method. Both fabricated PDs show good sensitivity and quick responses under 974 nm laser illumination at 150 mW. The photoresponsivity values and external quantum efficiency of both photodetectors are measured to be approximately 800 µAw‑1 and 0.12% for the GO based PD and 1.6 m Aw‑1 and 0.20% for the rGO based PD. Both PDs also have response and recovery times of 114 µs and 276 µs as well as 11 µs and 678 µs for the GO and rGO based PDs respectively. The proposed PDs would have significant applications in many optoelectronic devices as well as nanoelectronics.

Robust and Air-Stable Sandwiched Organo-Lead Halide Perovskites for Photodetector Applications

KAUST Repository

Mohammed, Omar F.; Banavoth, Murali; Saidaminov, Makhsud I.; Abdelhady, Ahmed L.; Pan, Jun; Liu, Jiakai; Peng, Wei; Bakr, Osman

2016-01-01

We report the simplest possible method to date for fabricating robust, air-stable, sandwiched perovskite photodetectors. Our proposed sandwiched structure is devoid of electron or hole transporting layers and also the expensive electrodes

Photovoltaic power systems and the National Electrical Code: Suggested practices

Energy Technology Data Exchange (ETDEWEB)

Wiles, J. [New Mexico State Univ., Las Cruces, NM (United States). Southwest Technology Development Inst.

1996-12-01

This guide provides information on how the National Electrical Code (NEC) applies to photovoltaic systems. The guide is not intended to supplant or replace the NEC; it paraphrases the NEC where it pertains to photovoltaic systems and should be used with the full text of the NEC. Users of this guide should be thoroughly familiar with the NEC and know the engineering principles and hazards associated with electrical and photovoltaic power systems. The information in this guide is the best available at the time of publication and is believed to be technically accurate; it will be updated frequently. Application of this information and results obtained are the responsibility of the user.

Water spray cooling technique applied on a photovoltaic panel: The performance response

International Nuclear Information System (INIS)

Nižetić, S.; Čoko, D.; Yadav, A.; Grubišić-Čabo, F.

2016-01-01

Highlights: • An experimental study was conducted on a monocrystalline photovoltaic panel (PV). • A water spray cooling technique was implemented to determine PV panel response. • The experimental results showed favorable cooling effect on the panel performance. • A feasibility aspect of the water spray cooling technique was also proven. - Abstract: This paper presents an alternative cooling technique for photovoltaic (PV) panels that includes a water spray application over panel surfaces. An alternative cooling technique in the sense that both sides of the PV panel were cooled simultaneously, to investigate the total water spray cooling effect on the PV panel performance in circumstances of peak solar irradiation levels. A specific experimental setup was elaborated in detail and the developed cooling system for the PV panel was tested in a geographical location with a typical Mediterranean climate. The experimental result shows that it is possible to achieve a maximal total increase of 16.3% (effective 7.7%) in electric power output and a total increase of 14.1% (effective 5.9%) in PV panel electrical efficiency by using the proposed cooling technique in circumstances of peak solar irradiation. Furthermore, it was also possible to decrease panel temperature from an average 54 °C (non-cooled PV panel) to 24 °C in the case of simultaneous front and backside PV panel cooling. Economic feasibility was also determined for of the proposed water spray cooling technique, where the main advantage of the analyzed cooling technique is regarding the PV panel’s surface and its self-cleaning effect, which additionally acts as a booster to the average delivered electricity.

Photovoltaic cell

Science.gov (United States)

Gordon, Roy G.; Kurtz, Sarah

1984-11-27

In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

Photovoltaic device

DEFF Research Database (Denmark)

2011-01-01

A photovoltaic cell module including a plurality of serially connected photovoltaic cells on a common substrate, each including a first electrode, a printed light-harvesting layer and a printed second electrode, wherein at least one of the electrodes is transparent, and wherein the second electrode...... of a first cell is printed such that it forms an electrical contact with the first electrode of an adjacent second cell without forming an electrical contact with the first electrode of the first cell or the light-harvesting layer of the second cell, and a method of making such photovoltaic cell modules....

Photocurrent enhancement of graphene photodetectors by photon tunneling of light into surface plasmons

Science.gov (United States)

Maleki, Alireza; Cumming, Benjamin P.; Gu, Min; Downes, James E.; Coutts, David W.; Dawes, Judith M.

2017-10-01

We demonstrate that surface plasmon resonances excited by photon tunneling through an adjacent dielectric medium enhance the photocurrent detected by a graphene photodetector. The device is created by overlaying a graphene sheet over an etched gap in a gold film deposited on glass. The detected photocurrents are compared for five different excitation wavelengths, ranging from {λ }0=570 {{nm}} to {λ }0=730 {{nm}}. Although the device is not optimized, the photocurrent excited with incident p-polarized light (which excites resonant surface plasmons) is significantly amplified in comparison with that for s-polarized light (without surface plasmon resonances). We observe that the photocurrent is greater for shorter wavelengths (for both s- and p-polarizations) with increased photothermal current. Position-dependent Raman spectroscopic analysis of the optically-excited graphene photodetector indicates the presence of charge carriers in the graphene near the metallic edge. In addition, we show that the polarity of the photocurrent reverses across the gap as the incident light spot moves across the gap. Graphene-based photodetectors offer a simple architecture which can be fabricated on dielectric waveguides to exploit the plasmonic photocurrent enhancement of the evanescent field. Applications for these devices include photodetection, optical sensing and direct plasmonic detection.

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

Directory of Open Access Journals (Sweden)

Eng Png Ching

2015-01-01

Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

Interim performance criteria for photovoltaic energy systems. [Glossary included

Energy Technology Data Exchange (ETDEWEB)

DeBlasio, R.; Forman, S.; Hogan, S.; Nuss, G.; Post, H.; Ross, R.; Schafft, H.

1980-12-01

This document is a response to the Photovoltaic Research, Development, and Demonstration Act of 1978 (P.L. 95-590) which required the generation of performance criteria for photovoltaic energy systems. Since the document is evolutionary and will be updated, the term interim is used. More than 50 experts in the photovoltaic field have contributed in the writing and review of the 179 performance criteria listed in this document. The performance criteria address characteristics of present-day photovoltaic systems that are of interest to manufacturers, government agencies, purchasers, and all others interested in various aspects of photovoltaic system performance and safety. The performance criteria apply to the system as a whole and to its possible subsystems: array, power conditioning, monitor and control, storage, cabling, and power distribution. They are further categorized according to the following performance attributes: electrical, thermal, mechanical/structural, safety, durability/reliability, installation/operation/maintenance, and building/site. Each criterion contains a statement of expected performance (nonprescriptive), a method of evaluation, and a commentary with further information or justification. Over 50 references for background information are also given. A glossary with definitions relevant to photovoltaic systems and a section on test methods are presented in the appendices. Twenty test methods are included to measure performance characteristics of the subsystem elements. These test methods and other parts of the document will be expanded or revised as future experience and needs dictate.

Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

International Nuclear Information System (INIS)

Blynskij, V.I.; Bozhatkin, O.A.; Golub, E.S.; Lemeshevskaya, A.M.; Shvedov, S.V.

2010-01-01

We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. (authors)

Urban photovoltaic electricity policies

Energy Technology Data Exchange (ETDEWEB)

NONE

2009-10-15

This report for the International Energy Agency (IEA) made by Task 10 of the Photovoltaic Power Systems (PVPS) programme takes a look at urban photovoltaic electricity policies. The mission of the Photovoltaic Power Systems Programme is to enhance the international collaboration efforts which accelerate the development and deployment of photovoltaic solar energy as a significant and sustainable renewable energy option. The objective of Task 10 is stated as being to enhance the opportunities for wide-scale, solution-oriented application of photovoltaics in the urban environment. The goal of the study presented was to evaluate a standardised basis for urban policies regarding photovoltaic integration in a set of cities in the countries participating in the IEA's Task 10, Urban Scale PV. The investigation was focused on three topics: the present state of the policies, the prospects for future policies fostering photovoltaic deployment and the prospects for future policies to cope with large-scale photovoltaic integration. The first section analyses the state of the policies; this analysis is then confirmed in section 2, which deals with present obstacles to PV deployment and solutions to overcome them. The third section investigates future prospects for PV deployment with the question of mastering large scale integration. The report concludes that cities could formulate urban solutions by developing integrated, specific provisions for PV deployment in their urban infrastructure planning.

Photovoltaics: The present presages the future

International Nuclear Information System (INIS)

Thornton, J.; Brown, L.

1992-01-01

This article is a technical assessment on photovoltaics and what effect new technology has on the ability of photovoltaics to compete in the utility market. The topics of the article include the solar resource, photovoltaic cells and systems, thick and thin film cells, the spherical cell, photovoltaic modules and systems, photovoltaic economics and utility applications, and technology transfer programs in the area of photovoltaic manufacturing

Photovoltaic barometer

International Nuclear Information System (INIS)

Anon.

2011-01-01

The photovoltaic sector is continuing on track, just as the extent of solar energy's electricity-generating potential is dawning on the public mind. The annual global installation figure was up more than twofold in 2010 (rising from just short of 7000 MWp in 2009). It leapt to over 16000 MWp, bringing worldwide installed photovoltaic capacity close to 38000 MWp. The photovoltaic power generated in the European Union at the end of 2010 reached 22.5 TWh which means an additional capacity of 13023 MWp during 2010. Concerning the cumulated installed capacity, Germany and Spain rank first and second in the European Union with respectively 17370 MWp and 3808 MWp

Photovoltaic barometer

International Nuclear Information System (INIS)

2006-01-01

This annual evaluation is a synthesis of works published in 2006. Comparisons are presented between the wind power performances and European Commission White Paper and Biomass action plan objectives. The european Union photovoltaic market reached the limits of the sector supply capacity for the first time. Meanwhile the prospects of growth in the photovoltaic market are still just as good as before. Silicon producers have finally responded to the expectations of the photovoltaic industry by announcing new production capacities. These extensions led to massively investing in new production capacities, in phase with ever greater demand. This increase in demand remains, however dependent upon the energy policy. (A.L.B.)

Photovoltaic device and method

Science.gov (United States)

Cleereman, Robert J; Lesniak, Michael J; Keenihan, James R; Langmaid, Joe A; Gaston, Ryan; Eurich, Gerald K; Boven, Michelle L

2015-01-27

The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

Photovoltaic systems in agriculture

International Nuclear Information System (INIS)

Corba, Z.; Katic, V.; Milicevic, D.

2009-01-01

This paper presents the possibility of using one of the renewable energy resources in agriculture. Specifically, the paper shows the possibility of converting solar energy into electricity through photovoltaic panels. The paper includes the analysis of the energy potential of solar radiation in the AP Vojvodina (Serbia). The results of the analysis can be used for the design of photovoltaic energy systems. The amount of solar energy on the territory of the province is compared with the same data from some European countries, in order to obtain a clear picture of the possibilities of utilization of this type of renewable sources. Three examples of possible application of photovoltaic systems are presented. The first relates to the consumer who is away from the electric distribution network - photovoltaic system in island mode. The remaining two examples relate to the application of photovoltaic power sources in manufacturing plants, flowers or vegetables. Applying photovoltaic source of electrical energy to power pumps for irrigation is highlighted

Photovoltaic Product Directory and Buyers Guide

Energy Technology Data Exchange (ETDEWEB)

Watts, R.L.; Smith, S.A.; Dirks, J.A.; Mazzucchi, R.P.; Lee, V.E.

1984-04-01

The directory guide explains photovoltaic systems briefly and shows what products are available off-the-shelf. Information is given to assist in designing a photovoltaic system and on financial incentives. Help is given for determining if photovoltaic products can meet a particular buyer's needs, and information is provided on actual photovoltaic user's experiences. Detailed information is appended on various financial incentives available from state and federal governments, sources of additional information on photovoltaics, sources of various photovoltaic products, and a listing of addresses of photovoltaic products suppliers. (LEW)

Utilizing Interlayer Excitons in Bilayer WS2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors.

Science.gov (United States)

Zhou, Yingqiu; Tan, Haijie; Sheng, Yuewen; Fan, Ye; Xu, Wenshuo; Warner, Jamie H

2018-04-19

Here we study the layer-dependent photoconductivity in Gr/WS 2 /Gr vertical stacked tunneling (VST) cross-bar devices made using two-dimensional (2D) materials all grown by chemical vapor deposition. The larger number of devices (>100) enables a statistically robust analysis on the comparative differences in the photovoltaic response of monolayer and bilayer WS 2 , which cannot be achieved in small batch devices made using mechanically exfoliated materials. We show a dramatic increase in photovoltaic response for Gr/WS 2 (2L)/Gr compared to monolayers because of the long inter- and intralayer exciton lifetimes and the small exciton binding energy (both interlayer and intralayer excitons) of bilayer WS 2 compared with that of monolayer WS 2 . Different doping levels and dielectric environments of top and bottom graphene electrodes result in a potential difference across a ∼1 nm vertical device, which gives rise to large electric fields perpendicular to the WS 2 layers that cause band structure modification. Our results show how precise control over layer number in all 2D VST devices dictates the photophysics and performance for photosensing applications.

Photovoltaics fundamentals, technology and practice

CERN Document Server

Mertens, Konrad

2013-01-01

Concise introduction to the basic principles of solar energy, photovoltaic systems, photovoltaic cells, photovoltaic measurement techniques, and grid connected systems, overviewing the potential of photovoltaic electricity for students and engineers new to the topic After a brief introduction to the topic of photovoltaics' history and the most important facts, Chapter 1 presents the subject of radiation, covering properties of solar radiation, radiation offer, and world energy consumption. Chapter 2 looks at the fundamentals of semiconductor physics. It discusses the build-up of semiconducto

Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

Science.gov (United States)

Piccardo, Marco; Rubin, Noah A.; Meadowcroft, Lauren; Chevalier, Paul; Yuan, Henry; Kimchi, Joseph; Capasso, Federico

2018-01-01

We investigate the nonlinear optical response of a commercial extended-wavelength In0.81Ga0.19As uncooled photodetector. Degenerate two-photon absorption in the mid-infrared range is observed using a quantum cascade laser emitting at λ = 4.5 μm as the excitation source. From the measured two-photon photocurrent signal, we extract a two-photon absorption coefficient β(2) = 0.6 ± 0.2 cm/MW, in agreement with the theoretical value obtained from the Eg-3 scaling law. Considering the wide spectral range covered by extended-wavelength InxGa1-xAs alloys, this result holds promise for applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 μm.

Characterization of time resolved photodetector systems for Positron Emission Tomography

CERN Document Server

Powolny, François

The main topic of this work is the study of detector systems composed of a scintillator, a photodetector and readout electronics, for Positron Emission Tomography (PET). In particular, the timing properties of such detector systems are studied. The first idea is to take advantage of the good timing properties of the NINO chip, which is a fast preamplifier-discriminator developed for the ALICE Time of flight detector at CERN. This chip uses a time over threshold technique that is to be applied for the first time in medical imaging applications. A unique feature of this technique is that it delivers both timing and energy information with a single digital pulse, the time stamp with the rising edge and the energy from the pulse width. This entails substantial simplification of the entire readout architecture of a tomograph. The scintillator chosen in the detector system is LSO. Crystals of 2x2x10mm3 were used. For the photodetector, APDs were first used, and were then replaced by SiPMs to make use of their highe...

64 x 64 thresholding photodetector array for optical pattern recognition

Science.gov (United States)

Langenbacher, Harry; Chao, Tien-Hsin; Shaw, Timothy; Yu, Jeffrey W.

1993-10-01

A high performance 32 X 32 peak detector array is introduced. This detector consists of a 32 X 32 array of thresholding photo-transistor cells, manufactured with a standard MOSIS digital 2-micron CMOS process. A built-in thresholding function that is able to perform 1024 thresholding operations in parallel strongly distinguishes this chip from available CCD detectors. This high speed detector offers responses from one to 10 milliseconds that is much higher than the commercially available CCD detectors operating at a TV frame rate. The parallel multiple peaks thresholding detection capability makes it particularly suitable for optical correlator and optoelectronically implemented neural networks. The principle of operation, circuit design and the performance characteristics are described. Experimental demonstration of correlation peak detection is also provided. Recently, we have also designed and built an advanced version of a 64 X 64 thresholding photodetector array chip. Experimental investigation of using this chip for pattern recognition is ongoing.

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2013-11-26

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hu, Zhan-Shuo [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hung, Fei-Yi, E-mail: fyhung@mail.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Chen, Kuan-Jen [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); The Instrument Center, National Cheng Kung University, Tainan 701, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hsieh, Wei-Kang; Liao, Tsai-Yu; Chen, Tse-Pu [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

2013-08-15

The degraded performance of annealed ZnO-based photodetector can be recovered by embedding Ag{sub 2}O nanoparticles resulted from the transformation of as-deposited Ag layer. After thermal treatment, the electrons were attracted at the interface between ZnO and Ag{sub 2}O. The excess Ag{sup +} ions form the cluster to incorporate into the interstitial sites of ZnO lattice to create a larger amount of lattice defects for the leakage path. The photo-current of ZnO film with Ag{sub 2}O nanoparticles is less than annealed ZnO film because the photo-induced electrons would flow into Ag{sub 2}O side. ZnO photodetector with the appropriate Ag{sub 2}O nanoparticles possesses the best rejection ratio.

Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene-MoS2 van der Waals Heterojunction.

Science.gov (United States)

Bettis Homan, Stephanie; Sangwan, Vinod K; Balla, Itamar; Bergeron, Hadallia; Weiss, Emily A; Hersam, Mark C

2017-01-11

van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed-dimensional p-n heterojunction diodes, such as p-type pentacene (0D) and n-type monolayer MoS 2 (2D), are especially interesting for photovoltaic applications where the absorption cross-section and charge transfer processes can be tailored by rational selection from the vast library of organic molecules and 2D materials. Here, we study the kinetics of excited carriers in pentacene-MoS 2 p-n type-II heterojunctions by transient absorption spectroscopy. These measurements show that the dissociation of MoS 2 excitons occurs by hole transfer to pentacene on the time scale of 6.7 ps. In addition, the charge-separated state lives for 5.1 ns, up to an order of magnitude longer than the recombination lifetimes from previously reported 2D material heterojunctions. By studying the fractional amplitudes of the MoS 2 decay processes, the hole transfer yield from MoS 2 to pentacene is found to be ∼50%, with the remaining holes undergoing trapping due to surface defects. Overall, the ultrafast charge transfer and long-lived charge-separated state in pentacene-MoS 2 p-n heterojunctions suggest significant promise for mixed-dimensional van der Waals heterostructures in photovoltaics, photodetectors, and related optoelectronic technologies.

Modeling Photovoltaic Power

OpenAIRE

Mavromatakis, F.; Franghiadakis, Y.; Vignola, F.

2016-01-01

A robust and reliable model describing the power produced by a photovoltaic system is needed in order to be able to detect module failures, inverter malfunction, shadowing effects and other factors that may result to energy losses. In addition, a reliable model enables an investor to perform accurate estimates of the system energy production, payback times etc. The model utilizes the global irradiance reaching the plane of the photovoltaic modules since in almost all Photovoltaic (PV) facilit...

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

Science.gov (United States)

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Photovoltaic technology diffusion. Contact and interact

International Nuclear Information System (INIS)

Kruijsen, J.

1999-09-01

How can the diffusion of photovoltaic technologies be advanced? Photovoltaics convert light into electrical energy. They are environmentally friendly, reliable and have minimal maintenance requirements. Up to now, their introduction into the electricity market has been dominated by a technology push perspective. However, this has not yet resulted in a large-scale implementation. This thesis describes a network approach to advance photovoltaic diffusion and presents four guiding principles intended for the parties concerned: those who supply the photovoltaic technologies (e.g., developers of photovoltaic cells); those who integrate photovoltaic technologies into (new) product systems (e.g., engineering firms); the users of photovoltaic systems (e.g., housing corporations); and those who stimulate the use of photovoltaics (e.g., policymakers, subsidisers, branch organisations, financial institutes, and NGOs). refs

Solar energy: photovoltaics

International Nuclear Information System (INIS)

Goetzberger, A.; Voss, B.; Knobloch, J.

1994-01-01

This textbooks covers the following topics: foundations of photovoltaics, solar energy, P-N junctions, physics of solar cells, high-efficiency solar cells, technology of Si solar cells, other solar cells, photovoltaic applications. (orig.)

Road map for photovoltaic electricity

International Nuclear Information System (INIS)

2011-02-01

This road map aims at highlighting industrial, technological and social challenges, at elaborating comprehensive visions, at highlighting technological locks, and at outlining research needs for the photovoltaic sector. It considers the following sector components: preparation of photo-sensitive materials, manufacturing of photovoltaic cells, manufacturing of photovoltaic arrays, design and manufacturing of electric equipment to control photovoltaic arrays and to connect them to the grid. It highlights the demand for photovoltaic installations, analyzes the value chain, proposes a vision of the sector by 2050 and defines target for 2020, discusses needs for demonstration and experimentation

Concentrator Photovoltaics

CERN Document Server

Luque, Antonio L

2007-01-01

Photovoltaic solar-energy conversion is one of the most promising technologies for generating renewable energy, and conversion of concentrated sunlight can lead to reduced cost for solar electricity. In fact, photovoltaic conversion of concentrated sunlight insures an efficient and cost-effective sustainable power resource. This book gives an overview of all components, e.g. cells, concentrators, modules and systems, for systems of concentrator photovoltaics. The authors report on significant results related to design, technology, and applications, and also cover the fundamental physics and market considerations. Specific contributions include: theory and practice of sunlight concentrators; an overview of concentrator PV activities; a description of concentrator solar cells; design and technology of modules and systems; manufacturing aspects; and a market study.

A novel application for concentrator photovoltaic in the field of agriculture photovoltaics

Science.gov (United States)

Liu, Luqing; Guan, Chenggang; Zhang, Fangxin; Li, Ming; Lv, Hui; Liu, Yang; Yao, Peijun; Ingenhoff, Jan; Liu, Wen

2017-09-01

Agriculture photovoltaics is a trend setting area which has already led to a new industrial revolution. Shortage of land in some countries and desertification of land where regular solar panels are deployed are some of the major problems in the photovoltaic industry. Concentrator photovoltaics experienced a decline in applicability after the cost erosion of regular solar panels at the end of the last decade. We demonstrate a novel and unique application for concentrator photovoltaics tackling at a same time the issue of conventional photovoltaics preventing the land being used for agricultural purpose where ever solar panels are installed. We leverage the principle of diffractive and interference technology to split the sun light into transmitted wavelengths necessary for plant growth and reflected wavelengths useful for solar energy generation. The technology has been successfully implemented in field trials and sophisticated scientific studies have been undertaken to evaluate the suitability of this technology for competitive solar power generation and simultaneous high-quality plant growth. The average efficiency of the agriculture photovoltaic system has reached more than 8% and the average efficiency of the CPV system is 6.80%.

Photovoltaic Solar Energy

International Nuclear Information System (INIS)

Gonzalez N, J.C.; Leal C, H.

1998-01-01

A short historical review of the technological advances; the current state and the perspectives of the materials for photovoltaic applications is made. Thereinafter, the general aspects of the physical principles and fundamental parameters that govern the operation of the solar cells are described. To way of the example, a methodology for the design and facilities size of a photovoltaic system is applied. Finally, the perspectives of photovoltaic solar energy in relationship to the market and political of development are mentioned

Photovoltaic roof construction

Energy Technology Data Exchange (ETDEWEB)

Hawley, W.W.

1980-02-26

In a batten-seam roof construction employing at least one photovoltaic cell module, the electrical conduits employed with the at least one photovoltaic cell module are disposed primarily under the battens of the roof.

Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics

Science.gov (United States)

Ramiro, I.; Villa, J.; Tablero, C.; Antolín, E.; Luque, A.; Martí, A.; Hwang, J.; Phillips, J.; Martin, A. J.; Millunchick, J.

2017-09-01

Quantum-dot (QD) intermediate-band (IB) materials are regarded as promising candidates for high-efficiency photovoltaics. The sequential two-step two-photon absorption processes that take place in these materials have been proposed to develop high-efficiency solar cells and infrared (IR) photodetectors. In this work, we experimentally and theoretically study the interrelation of the absorptivity with transitions of carriers to and from the IB in type-II GaSb/GaAs QD devices. Our devices exhibit three optical band gaps with: EL=0.49 eV ,EH=1.02 eV , and EG=1.52 eV , with the IB located 0.49 eV above the valence band. These values are well supported by semiempirical calculations of the QDs electronic structure. Through intensity-dependent two-photon photocurrent experiments, we are able to vary the filling state of the IB, thus modifying the absorptivity of the transitions to and from this band. By filling the IB with holes via E =1.32 eV or E =1.93 eV monochromatic illumination, we demonstrate an increase in the EL-related absorptivity of more than two orders of magnitude and a decrease in the EH-related absorptivity of one order of magnitude. The antisymmetrical evolution of those absorptivities is quantitatively explained by a photoinduced shift of the quasi-Fermi level of the IB. Furthermore, we report the observation of a two-photon photovoltage, i.e., the contribution of subband gap two-photon absorption to increase the open-circuit voltage of solar cells. We find that the generation of the two-photon photovoltage is related, in general, to the production of a two-photon photocurrent. However, while photons with energy close to EL participate in the production of the two-photon photocurrent, they are not effective in the production of a two-photon photovoltage. We also report the responsivity of GaSb/GaAs QD devices performing as optically triggered photodetectors. These devices exhibit an amplification factor of almost 400 in the IR spectral region. This high

Enhanced Photovoltaic Properties of Gradient Doping Solar Cells

International Nuclear Information System (INIS)

Zhang Chun-Lei; Du Hui-Jing; Zhu Jian-Zhuo; Xu Tian-Fu; Fang Xiao-Yong

2012-01-01

An optimum design of a-Si:H(n)/a-Si:H(i)/c-Si(p) heterojunction solar cell is realized with 24.27% conversion efficiency by gradient doping of the a-Si:H(n) layer. The photovoltaic properties are simulated by the AFORSHET software. Besides the additional electric field caused by the gradient doping, the enhanced and widen spectral response also improves the solar cell performance compared with the uniform-doping mode. The simulation shows that the gradient doping is efficient to improve the photovoltaic performance of the solar cells. The study is valuable for the solar cell design with excellent performances

Organic Semiconductor Photovoltaics

Science.gov (United States)

Sariciftci, Niyazi Serdar

2005-03-01

Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

International Nuclear Information System (INIS)

Li-Wen, Sang; Zhi-Xin, Qin; Long-Bin, Cen; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang; Cai-Jing, Cheng; Hong-Yan, Zhao; Zheng-Xiong, Lu; Jia-Xin, Ding; Lan, Zhao; Jun-Jie, Si; Wei-Guo, Sun

2008-01-01

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1 × 10 −6 A/cm 2 at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 × 10 12 cmHz 1/2 W −1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current

Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

Directory of Open Access Journals (Sweden)

Chung-Hua Chao

2013-01-01

Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

GaN membrane MSM ultraviolet photodetectors

Science.gov (United States)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

2014-07-14

β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

Photovoltaic product directory and buyers guide

Energy Technology Data Exchange (ETDEWEB)

Watts, R.L.; Smith, S.A.; Mazzucchi, R.P.

1981-06-01

Basic information on photovoltaic conversion technology is provided for those unfamiliar with the field. Various types of photovoltaic products and systems currently available off-the-shelf are described. These include products without batteries, battery chargers, power packages, home electric systems, and partial systems. Procedures are given for designing a photovoltaic system from scratch. A few custom photovoltaic systems are described, and a list is compiled of photovoltaic firms which can provide custom systems. Guidance is offered for deciding whether or not to use photovoltaic products. A variety of installations are described and their performance is appraised by the owners. Information is given on various financial incentives available from state and federal governments. Sources of additional information on photovoltaics are listed. A matrix is provided indicating the sources of various types of photovoltaic products. The addresses of suppliers are listed. (LEW)

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

Science.gov (United States)

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Directory of Open Access Journals (Sweden)

Luigi Sirleto

2010-11-01

Full Text Available Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Self-powered highly enhanced broad wavelength (UV to visible) photoresponse of ZnO@ZnO1-xSx@ZnS core-shell heterostructures.

Science.gov (United States)

Sarkar, Sanjit; Das Mahapatra, Ayon; Basak, Durga

2018-08-01

In the present scenario of energy crisis, it is inevitable to focus on the low powered or self-powered devices. Multi-spectral photoresponse is an additional advantage to the above feature. We have developed an efficient self-powered photodetector with broad wavelength detection range based on heterostructures of two wide band-gap materials ZnO and ZnS. More than two orders higher responsivity and 'ON/OFF' ratio has been observed in case of heterostructure sample as compared to pristine ZnO. On the basis of the controlled experimental results, it has been established that the interfacial surface engineering, can be useful to improve the visible response and a significant photovoltaic performance under visible light illumination can be achieved. Unlike the other recent reports on self-powered UV-visible photodetector, we have achieved two order higher visible response without compromising the UV photoresponse. Unprecedented broad wavelength photodetection in self-powered mode in the present study highlights the uniqueness and advantage of an interface in a core-shell heterostructure for photodetection applications. Copyright © 2018 Elsevier Inc. All rights reserved.

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array.

Science.gov (United States)

Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin

2015-06-23

A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

Ultra low-noise differential ac-coupled photodetector for sensitive pulse detection applications

International Nuclear Information System (INIS)

Windpassinger, Patrick J; Boisen, Axel; Kjærgaard, Niels; Polzik, Eugene S; Müller, Jörg Helge; Kubasik, Marcin; Koschorreck, Marco

2009-01-01

We report on the performance of ultra low-noise differential photodetectors especially designed for probing of atomic ensembles with weak light pulses. The working principle of the detectors is described together with the analysis procedures employed to extract the photon shot noise of light pulses with ∼1 μs duration. As opposed to frequency response peaked detectors, our approach allows for broadband quantum noise measurements. The equivalent noise charge (ENC) for two different hardware approaches is evaluated to 280 and 340 electrons per pulse, respectively, which corresponds to a dark noise equivalent photon number of n 3dB = 0.8 × 10 5 and n 3dB = 1.2 × 10 5 in the two approaches. Finally, we discuss the possibility of removing classical correlations in the output signal caused by detector imperfection by using double-correlated sampling methods

Photovoltaic cell module and method of forming

Science.gov (United States)

Howell, Malinda; Juen, Donnie; Ketola, Barry; Tomalia, Mary Kay

2017-12-12

A photovoltaic cell module, a photovoltaic array including at least two modules, and a method of forming the module are provided. The module includes a first outermost layer and a photovoltaic cell disposed on the first outermost layer. The module also includes a second outermost layer disposed on the photovoltaic cell and sandwiching the photovoltaic cell between the second outermost layer and the first outermost layer. The method of forming the module includes the steps of disposing the photovoltaic cell on the first outermost layer, disposing a silicone composition on the photovoltaic cell, and compressing the first outermost layer, the photovoltaic cell, and the second layer to form the photovoltaic cell module.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Directory of Open Access Journals (Sweden)

Chang-Ju Lee

2017-07-01

Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Portable photovoltaic irrigation pumps

Energy Technology Data Exchange (ETDEWEB)

Furber, J. D.

1980-07-01

Experiences in developing a solar-powered irrigation pump to meet the needs of poor farmers in developing nations are summarized. The design which evolved is small and portable, employing a high-efficiency electric pump, powered by photovoltaic panels. Particular emphasis is placed on how the system works, and on early field problems experienced with the first prototypes. The resolution of these problems and the performance of actual systems in various countries is presented and user responses are noted.

Photovoltaic power generation system free of bypass diodes

Science.gov (United States)

Lentine, Anthony L.; Okandan, Murat; Nielson, Gregory N.

2015-07-28

A photovoltaic power generation system that includes a solar panel that is free of bypass diodes is described herein. The solar panel includes a plurality of photovoltaic sub-modules, wherein at least two of photovoltaic sub-modules in the plurality of photovoltaic sub-modules are electrically connected in parallel. A photovoltaic sub-module includes a plurality of groups of electrically connected photovoltaic cells, wherein at least two of the groups are electrically connected in series. A photovoltaic group includes a plurality of strings of photovoltaic cells, wherein a string of photovoltaic cells comprises a plurality of photovoltaic cells electrically connected in series. The strings of photovoltaic cells are electrically connected in parallel, and the photovoltaic cells are microsystem-enabled photovoltaic cells.

Thickness-dependent photovoltaic effects in miscut Nb-doped SrTiO3 single crystals

International Nuclear Information System (INIS)

Yue Zengji; Zhao Kun; Zhao Songqing; Lu Zhiqing; Li Xiaoming; Ni Hao; Wang Aijun

2010-01-01

The photovoltaic effects of Nb-doped SrTiO 3 single crystals with different thicknesses were investigated under the illumination of ultraviolet pulsed lasers. The peak photovoltage increased and then decreased quickly with the decrease in crystal thickness, and a maximum photovoltage occurred for the 180 μm-thick crystal. The photovoltaic response time decreased monotonically with decreasing crystal thickness. The present results suggested the promising potential of reducing crystal thickness in high sensitivity detectors with fast response.

Photovoltaics in the Department of Defense

International Nuclear Information System (INIS)

Chapman, R.N.

1997-01-01

This paper documents the history of photovoltaic use within the Department of Defense leading up to the installation of 2.1 MW of photovoltaics underway today. This history describes the evolution of the Department of Defense's Tri-Service Photovoltaic Review Committee and the committee's strategic plan to realize photovoltaic's full potential through outreach, conditioning of the federal procurement system, and specific project development. The Photovoltaic Review Committee estimates photovoltaic's potential at nearly 4,000 MW, of which about 700 MW are considered to be cost-effective at today's prices. The paper describes photovoltaic's potential within the Department of Defense, the status and features of the 2.1-MW worth of photovoltaic systems under installation, and how these systems are selected and implemented. The paper also documents support provided to the Department of Defense by the Department of Energy dating back to the late 70s. copyright 1997 American Institute of Physics

US photovoltaic patents: 1991--1993

Energy Technology Data Exchange (ETDEWEB)

Pohle, L

1995-03-01

This document contains US patents on terrestrial photovoltaic (PV) power applications, including systems, components, and materials as well as manufacturing and support functions. The patent entries in this document were issued from 1991 to 1993. The entries were located by searching USPA, the database of the US Patent Office. The final search retrieved all patents under the class ``Batteries, Thermoelectric and Photoelectric`` and the subclasses ``Photoelectric,`` ``Testing,`` and ``Applications.`` The search also located patents that contained the words ``photovoltaic(s)`` or ``solar cell(s)`` and their derivatives. After the initial list was compiled, most of the patents on the following subjects were excluded: space photovoltaic technology, use of the photovoltaic effect for detectors, and subjects only peripherally concerned with photovoltaic. Some patents on these three subjects were included when ft appeared that those inventions might be of use in terrestrial PV power technologies.

Two color photodetector using an asymmetric quantum well structure

OpenAIRE

Lantz, Kevin R.

2002-01-01

Approved for public release; distribution is unlimited The past twenty years have seen an explosion in the realm of infrared detection technology fueled by improvements in III-V semiconductor technology and by new semiconductor growth methods. One of the fastest growing areas of this research involves the use of bandgap engineering in order to create artificial quantum wells for use in Quantum Well Infrared Photodetectors (QWIPs). QWIPs have an advantage over other infrared detectors such ...

Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

KAUST Repository

Shen, Chao

2017-02-28

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

KAUST Repository

Shen, Chao; Lee, Changmin; Stegenburgs, Edgars; Lerma, Jorge Holguin; Ng, Tien Khee; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

PARTICLE SWARM OPTIMIZATION BASED OF THE MAXIMUM PHOTOVOLTAIC POWER TRACTIOQG UNDER DIFFERENT CONDITIONS

Directory of Open Access Journals (Sweden)

Y. Labbi

2015-08-01

Full Text Available Photovoltaic electricity is seen as an important source of renewable energy. The photovoltaic array is an unstable source of power since the peak power point depends on the temperature and the irradiation level. A maximum peak power point tracking is then necessary for maximum efficiency.In this work, a Particle Swarm Optimization (PSO is proposed for maximum power point tracker for photovoltaic panel, are used to generate the optimal MPP, such that solar panel maximum power is generated under different operating conditions. A photovoltaic system including a solar panel and PSO MPP tracker is modelled and simulated, it has been has been carried out which has shown the effectiveness of PSO to draw much energy and fast response against change in working conditions.

Standard Practice for Visual Inspections of Photovoltaic Modules

CERN Document Server

American Society for Testing and Materials. Philadelphia

2008-01-01

1.1 This practice covers procedures and criteria for visual inspections of photovoltaic modules. 1.2 Visual inspections of photovoltaic modules are normally performed before and after modules have been subjected to environmental, electrical, or mechanical stress testing, such as thermal cycling, humidity-freeze cycling, damp heat exposure, ultraviolet exposure, mechanical loading, hail impact testing, outdoor exposure, or other stress testing that may be part of photovoltaic module testing sequence. 1.3 This practice does not establish pass or fail levels. The determination of acceptable or unacceptable results is beyond the scope of this practice. 1.4 There is no similar or equivalent ISO standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Photovoltaic applications

International Nuclear Information System (INIS)

Sidrach, M.

1992-01-01

The most common terrestrial applications of photovoltaic plants are reviewed. Classification of applications can be done considering end-use sectors and load profiles (consumption demand). For those systems with direct coupling the working point is determined by the intersection of the load line with the I-V curve Design guidelines are provided for photovoltaic systems. This lecture focusses on the distribution system and safeguards

Handheld Longwave Infrared Camera Based on Highly-Sensitive Quantum Well Infrared Photodetectors, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — We propose to develop a compact handheld longwave infrared camera based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. Based on...

A differential spectral responsivity measurement system constructed for determining of the spectral responsivity of a single- and triple-junction photovoltaic cells

Science.gov (United States)

Sametoglu, Ferhat; Celikel, Oguz; Witt, Florian

2017-10-01

A differential spectral responsivity (DSR) measurement system has been designed and constructed at National Metrology Institute of Turkey (TUBITAK UME) to determine the spectral responsivity (SR) of a single- or a multi-junction photovoltaic device (solar cell). The DSR setup contains a broad band light bias source composed of a constructed Solar Simulator based on a 1000 W Xe-arc lamp owning a AM-1.5 filter and 250 W quartz-tungsten-halogen lamp, a designed and constructed LED-based Bias Light Sources, a DC voltage bias circuit, and a probe beam optical power tracking and correction circuit controlled with an ADuC847 microcontroller card together with an embedded C based software, designed and constructed in TUBITAK UME under this project. By using the constructed DSR measurement system, the SR calibration of solar cells, the monolitic triple-junction solar cell GaInP/GaInAs/Ge and its corresponding component cells have been performed within the EURAMET Joint Research Project SolCell.

R&D of a pioneering system for a high resolution photodetector: The VSiPMT

Science.gov (United States)

Barbato, F. C. T.; Barbarino, G.; Campajola, L.; Di Capua, F.; Mollo, C. M.; Valentini, A.; Vivolo, D.

2017-12-01

The VSiPMT (Vacuum Silicon PhotoMultiplier Tube) is an innovative design for a hybrid photodetector. The idea, born with the purpose to use a SiPM for large detection volumes, consists in replacing the classical dynode chain with a special SiPM. In this configuration, we match the large sensitive area of a photocathode with the performances of the SiPM technology, which therefore acts like an electron detector and so like a current amplifier. The excellent photon counting capability, fast response, low power consumption and the stability are among the most attractive features of the VSiPMT.We now present the progress on the realization of a 1-in. prototype and the preliminary tests we are performing on it.

Thin film photovoltaic panel and method

Science.gov (United States)

Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

1991-06-11

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Photovoltaic engineering handbook

Energy Technology Data Exchange (ETDEWEB)

Lasnier, F; Ang, T G [Asian Institute of Technolgoy, Bangkok (TH)

1990-01-01

The Photovoltaic Engineering Handbook is a comprehensive 'nuts and bolts' guide to photovoltaic technology and systems engineering aimed at engineers and designers in the field. It is the first book to look closely at the practical problems involved in evaluating and setting up a PV power system. The authors' comprehensive insight into the different procedures and decisions that a designer needs to make. The book is unique in its coverage and the technical information is presented in a concise and simple way to enable engineers from a wide range of backgrounds to initiate, assess, analyse and design a PV system. Energy planners making decisions on the most appropriate system for specific needs will also benefit from reading this book. Topics covered include technological processes, including solar cell technology, the photovoltaic generator, photovoltaic systems engineering; characterization and testing methods, sizing procedure; economic analysis and instrumentation. (author).

Broadband Packaging of Photodetectors for 100 Gb/s Ethernet Applications

DEFF Research Database (Denmark)

Jiang, Chenhui; Krozer, Viktor; Bach, Heinz-Gunter

2013-01-01

The packing structure of functional modules is a major limitaion in achieving a desired performance for 100 Gb/s ethernet applications. This paper presents a methodology of developing advanced packaging of photodetectors (PDs) for high-speed data transmission applications by using 3-D electromagn......The packing structure of functional modules is a major limitaion in achieving a desired performance for 100 Gb/s ethernet applications. This paper presents a methodology of developing advanced packaging of photodetectors (PDs) for high-speed data transmission applications by using 3-D...... electromagnetic (EM) simulations. A simplified model of the PD module is first used to analyze and optimize packaging structures and propose an optimal packaging design based on the simplified model. Although a PD module with improved performance proved the success of the optimal packaging design, the simplified...... of limiting the bandwidth of PD modules. After eliminating the mode mismatch effect by improving the chip-conductor-backed coplanar waveguide transition, a final optimal packaging structure is implemented for the PD module with reduced attenuation up to 100 GHz and a broader 3-dB bandwidth of more than 90 GHz...

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

International Nuclear Information System (INIS)

Wei Xia; Yan Fa-Guang; Shen Chao; Lv Quan-Shan; Wang Kai-You

2017-01-01

Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs. (topical reviews)

All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

Directory of Open Access Journals (Sweden)

Alireza Taghizadeh

2017-09-01

Full Text Available We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelength grating structure topped with a silicide layer of nanometers thickness as an absorbing material. It is shown that a nearly-perfect light absorption is possible for the thin silicide layer by its integration to the grating resonator. The absorption is shown to be maximized when the critical coupling condition is satisfied. Simulations show that the external quantum efficiency of the proposed photodetector with a 2-nm-thick PtSi absorbing layer at the center wavelength of 1550 nm can reach up to ∼60%.

Directional Growth of Ultralong CsPbBr3 Perovskite Nanowires for High-Performance Photodetectors.

Science.gov (United States)

Shoaib, Muhammad; Zhang, Xuehong; Wang, Xiaoxia; Zhou, Hong; Xu, Tao; Wang, Xiao; Hu, Xuelu; Liu, Huawei; Fan, Xiaopeng; Zheng, Weihao; Yang, Tiefeng; Yang, Shuzhen; Zhang, Qinglin; Zhu, Xiaoli; Sun, Litao; Pan, Anlian

2017-11-08

Directional growth of ultralong nanowires (NWs) is significant for practical application of large-scale optoelectronic integration. Here, we demonstrate the controlled growth of in-plane directional perovskite CsPbBr 3 NWs, induced by graphoepitaxial effect on annealed M-plane sapphire substrates. The wires have a diameter of several hundred nanometers, with lengths up to several millimeters. Microstructure characterization shows that CsPbBr 3 NWs are high-quality single crystals, with smooth surfaces and well-defined cross section. The NWs have very strong band-edge photoluminescence (PL) with a long PL lifetime of ∼25 ns and can realize high-quality optical waveguides. Photodetectors constructed on these individual NWs exhibit excellent photoresponse with an ultrahigh responsivity of 4400 A/W and a very fast response speed of 252 μs. This work presents an important step toward scalable growth of high-quality perovskite NWs, which will provide promising opportunities in constructing integrated nanophotonic and optoelectronic systems.

Spectrally-Tunable Infrared Camera Based on Highly-Sensitive Quantum Well Infrared Photodetectors, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We propose to develop a SPECTRALLY-TUNABLE INFRARED CAMERA based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. This will build on...

Solar Photovoltaic Cells.

Science.gov (United States)

Mickey, Charles D.

1981-01-01

Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

Can photovoltaic replace nuclear?

International Nuclear Information System (INIS)

2017-01-01

As the French law on energy transition for a green growth predicts that one third of nuclear energy production is to be replaced by renewable energies (wind and solar) by 2025, and while the ADEME proposes a 100 per cent renewable scenario for 2050, this paper proposes a brief analysis of the replacement of nuclear energy by solar photovoltaic energy. It presents and discusses some characteristics of photovoltaic production: production level during a typical day for each month (a noticeable lower production in December), evolution of monthly production during a year, evolution of the rate between nuclear and photovoltaic production. A cost assessment is then proposed for energy storage and for energy production, and a minimum cost of replacement of nuclear by photovoltaic is assessed. The seasonal effect is outlined, as well as the latitude effect. Finally, the authors outline the huge cost of such a replacement, and consider that public support to new photovoltaic installations without an at least daily storage mean should be cancelled

A Self-Powered and Flexible Organometallic Halide Perovskite Photodetector with Very High Detectivity

KAUST Repository

Leung, Siu

2018-01-10

Flexible and self-powered photodetectors (PDs) are highly desirable for applications in image sensing, smart building, and optical communications. In this paper, a self-powered and flexible PD based on the methylammonium lead iodide (CH3 NH3 PBI3 ) perovskite is demonstrated. Such a self-powered PD can operate even with irregular motion such as human finger tapping, which enables it to work without a bulky external power source. In addition, with high-quality CH3 NH3 PBI3 perovskite thin film fabricated with solvent engineering, the PD exhibits an impressive detectivity of 1.22 × 1013 Jones. In the self-powered voltage detection mode, it achieves a large responsivity of up to 79.4 V mW-1 cm-2 and a voltage response of up to ≈90%. Moreover, as the PD is made of flexible and transparent polymer films, it can operate under bending and functions at 360 ° of illumination. As a result, the self-powered, flexible, 360 ° omnidirectional perovskite PD, featuring high detectivity and responsivity along with real-world sensing capability, suggests a new direction for next-generation optical communications, sensing, and imaging applications.

Organic photovoltaics. Technology and market

International Nuclear Information System (INIS)

Brabec, Christoph J.

2004-01-01

Organic photovoltaics has come into the international research focus during the past three years. Up to now main efforts have focused on the improvement of the solar conversion efficiency, and in recent efforts 5% white light efficiencies on the device level have been realized. Despite this in comparison to inorganic technologies low efficiency, organic photovoltaics is evaluated as one of the future key technologies opening up completely new applications and markets for photovoltaics. The key property which makes organic photovoltaics so attractive is the potential of reel to reel processing on low cost substrates with standard coating and printing processes. In this contribution we discuss the economical and technical production aspects for organic photovoltaics

Roof Photovoltaic Test Facility

Data.gov (United States)

Federal Laboratory Consortium — In order to accurately predict the annual energy production of photovoltaic systems for any given geographical location, building orientation, and photovoltaic cell...

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

Science.gov (United States)

Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

2011-03-09

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

3.2 Gigabit-per-second Visible Light Communication Link with InGaN/GaN MQW Micro-photodetector

KAUST Repository

Ho, Kang Ting

2018-01-29

This paper presents the first demonstration of InGaN multiple quantum well (MQW) based micro-photodetectors (µPD) used as the optical receiver in orthogonal frequency-division multiplexing (OFDM) modulated visible communication system (VLC). The 80-µm diameter µPD exhibits a wavelength-selective responsivity in the near-UV to violet regime (374 nm - 408 nm) under a low reverse bias of −3 V. The modulation scheme of 16-quadrature amplitude modulation (16-QAM) OFDM enables the use of frequency response beyond −3 dB cutoff bandwidth of µPD. A record high data rate of 3.2 Gigabit per second (Gpbs) was achieved as a result, which provides the proof-of-concept verification of a viable high speed VLC link.

Hybrid III-V/SOI resonant cavity enhanced photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector.

Science.gov (United States)

Li, Xiaoqiang; Lin, Shisheng; Lin, Xing; Xu, Zhijuan; Wang, Peng; Zhang, Shengjiao; Zhong, Huikai; Xu, Wenli; Wu, Zhiqian; Fang, Wei

2016-01-11

In graphene/semiconductor heterojunction, the statistic charge transfer between graphene and semiconductor leads to decreased junction barrier height and limits the Fermi level tuning effect in graphene, which greatly affects the final performance of the device. In this work, we have designed a sandwich diode for solar cells and photodetectors through inserting 2D hexagonal boron nitride (h-BN) into graphene/GaAs heterostructure to suppress the static charge transfer. The barrier height of graphene/GaAs heterojunction can be increased from 0.88 eV to 1.02 eV by inserting h-BN. Based on the enhanced Fermi level tuning effect with interface h-BN, through adopting photo-induced doping into the device, power conversion efficiency (PCE) of 10.18% has been achieved for graphene/h-BN/GaAs compared with 8.63% of graphene/GaAs structure. The performance of graphene/h-BN/GaAs based photodetector is also improved with on/off ratio increased by one magnitude compared with graphene/GaAs structure.

Tunable Resonant-Cavity-Enhanced Photodetector with Double High-Index-Contrast Grating Mirrors

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Yvind, Kresten; Chung, Il-Sug

2013-01-01

In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists....... Furthermore, the fact that it can be fabricated on a silicon platform offers us a possibility of integration with electronics.......In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists...... of a top InP HCG mirror, a p-i-n photodiode embedding multiple quantum wells, and a Si HCG mirror formed in the Si layer of a silicon-on-insulator wafer. The detection wavelength can be changed by moving the top InP HCG mirror suspended in the air. High reflectivity and small penetration length of HCGs...

Enhanced Graphene Photodetector with Fractal Metasurface

DEFF Research Database (Denmark)

Fang, Jieran; Wang, Di; DeVault, Clayton T

2017-01-01

Graphene has been demonstrated to be a promising photodetection material because of its ultrabroadband optical absorption, compatibility with CMOS technology, and dynamic tunability in optical and electrical properties. However, being a single atomic layer thick, graphene has intrinsically small...... optical absorption, which hinders its incorporation with modern photodetecting systems. In this work, we propose a gold snowflake-like fractal metasurface design to realize broadband and polarization-insensitive plasmonic enhancement in graphene photodetector. We experimentally obtain an enhanced...... photovoltage from the fractal metasurface that is an order of magnitude greater than that generated at a plain gold-graphene edge and such an enhancement in the photovoltage sustains over the entire visible spectrum. We also observed a relatively constant photoresponse with respect to polarization angles...

Trap assisted charge multiplication enhanced photoresponse of Li-P codoped p-ZnO/n-Si heterojunction ultraviolet photodetectors

Science.gov (United States)

Sharma, Pankaj; Bhardwaj, Ritesh; Kumar, Amitesh; Mukherjee, Shaibal

2018-01-01

In this work, we report a high-performance p-ZnO/n-Si heterojunction-based ultraviolet (UV) photodetector fabricated by dual ion beam sputter deposition. The lithium-phosphorus (Li-P) codoping route was used to realize low resistive and stable p-type ZnO. The current-voltage characteristics of p-ZnO/n-Si heterojunction photodiode showed good rectifying behavior with a rectification ratio of 170 at  ±3 V. The spectral response measurements of the photodiode showed excellent responsivity with a peak observed around ~325 nm and cutoff wavelength around 370 nm. The maximum responsivity achieved was 2.6 A W-1 at an applied reverse bias of  -6 V. The external quantum efficiency determined was of the order of ~1000% which is attributed to the trap assisted multiplication of charge carriers.

US Photovoltaic Patents, 1988--1990

Energy Technology Data Exchange (ETDEWEB)

1991-12-01

This document contains US patents on terrestrial photovoltaic (PV) power applications, including systems, components, and materials, as well as manufacturing and support functions. The patent entries in this document were issued from 1988 through 1990. The entries were located by searching USPA, the data base of the US Patent Office. The final search retrieved all patents under the class ``Batteries, Thermoelectric and Photoelectric`` and the subclasses ``Photoelectric,`` ``Testing,`` and ``Applications.`` The search also located patents that contained the words ``photovoltaic(s)`` or ``solar cell(s)`` and their derivatives. A manual search of the patents in the Solar Energy Research Institute (SERI) patent file augmented the data base search. After the initial list was compiled, most of the patents on the following subjects were excluded: space photovoltaic technology, use of the photovoltaic effect for detectors and subjects only peripherally concerned with photovoltaics. Some patents on these three subjects were included when it appeared that those inventions might be of use in terrestrial PV power technologies.

Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells.

Science.gov (United States)

Yi, Sum-Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-Hwa

2016-12-14

We developed Schottky junction photovoltaic cells based on multilayer Mo 1-x W x Se 2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo 0.5 W 0.5 Se 2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe 2 and WSe 2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo 0.5 W 0.5 Se 2 devices. Furthermore, we showed that Mo 0.5 W 0.5 Se 2 -based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

Monolithic and Flexible ZnS/SnO2 Ultraviolet Photodetectors with Lateral Graphene Electrodes.

Science.gov (United States)

Zhang, Cheng; Xie, Yunchao; Deng, Heng; Tumlin, Travis; Zhang, Chi; Su, Jheng-Wun; Yu, Ping; Lin, Jian

2017-05-01

A continuing trend of miniaturized and flexible electronics/optoelectronic calls for novel device architectures made by compatible fabrication techniques. However, traditional layer-to-layer structures cannot satisfy such a need. Herein, a novel monolithic optoelectronic device fabricated by a mask-free laser direct writing method is demonstrated in which in situ laser induced graphene-like materials are employed as lateral electrodes for flexible ZnS/SnO 2 ultraviolet photodetectors. Specifically, a ZnS/SnO 2 thin film comprised of heterogeneous ZnS/SnO 2 nanoparticles is first coated on polyimide (PI) sheets by a solution process. Then, CO 2 laser irradiation ablates designed areas of the ZnS/SnO 2 thin film and converts the underneath PI into highly conductive graphene as the lateral electrodes for the monolithic photodetectors. This in situ growth method provides good interfaces between the graphene electrodes and the semiconducting ZnS/SnO 2 resulting in high optoelectronic performance. The lateral electrode structure reduces total thickness of the devices, thus minimizing the strain and improving flexibility of the photodetectors. The demonstrated lithography-free monolithic fabrication is a simple and cost-effective method, showing a great potential for developement into roll-to-roll manufacturing of flexible electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photovoltaic Wire, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project will investigate a new architecture for photovoltaic devices based on nanotechnology: photovoltaic wire. The...

Solar Photovoltaic Energy.

Science.gov (United States)

Ehrenreich, Henry; Martin, John H.

1979-01-01

The goals of solar photovoltaic technology in contributing to America's future energy needs are presented in this study conducted by the American Physical Society. Although the time needed for photovoltaics to become popular is several decades away, according to the author, short-range applications are given. (Author/SA)

A Self-Powered and Flexible Organometallic Halide Perovskite Photodetector with Very High Detectivity

KAUST Repository

Leung, Siu; Ho, Kang-Ting; Kung, Po-Kai; Hsiao, Vincent K. S.; Alshareef, Husam N.; Wang, Zhong Lin; He, Jr-Hau

2018-01-01

Flexible and self-powered photodetectors (PDs) are highly desirable for applications in image sensing, smart building, and optical communications. In this paper, a self-powered and flexible PD based on the methylammonium lead iodide (CH3 NH3 PBI3

Organic photovoltaics

Energy Technology Data Exchange (ETDEWEB)

NONE

2010-07-01

Within the International Conference and Exhibition at 16th September,2010 at the Maritim Hotel (Wuerzburg, Federal Republic of Germany) the following lectures were held: (1) History of Organic Photovoltaics (Niyazi Serdar Sariciftci); (2) PV Activities at the ZAE Bayern (Vladimir Dyakonov); (3) Progress in Solid State DSC (Peter Erk); (4) Polymer Semiconductors for OPV (Mats Andersson); (5) Fullerene Derivative N-Types in Organic Solar Cells (David Kronholm); (6) Modelling Charge-Transport in Organic Photovoltaic Materials (Jenny Nelson); (7) Multi Junction Modules R and D Status and Outlook (Paul Blom); (8) Imaging Technologies for Organic Solar Cells (Jonas Bachmann); (9) Production of Multi-junction Organic Photovoltaic Cells and Modules (Martin Pfeiffer); (10) Upscaling of Polymer Solar Cell Fabrication Using Full Roll-to-roll Processing (Frederik Christian Krebs); (11) Industrial Aspects and Large Scale OPV Production (Jens Hauch).

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Photovoltaic technologies

OpenAIRE

Bagnall, Darren M; Boreland, Matt

2008-01-01

Photovoltaics is already a billion dollar industry. It is experiencing rapid growth as concerns over fuel supplies and carbon emissions mean that governments and individuals are increasingly prepared to ignore its current high costs. It will become truly mainstream when its costs are comparable to other energy sources. At the moment, it is around four times too expensive for competitive commercial production. Three generations of photovoltaics have been envisaged that will take solar power in...

Photovoltaic barometer

International Nuclear Information System (INIS)

Anon.

2009-01-01

spain and Germany set the pace for the world photovoltaic market in 2008, which grew to more than twice its 2007 size. The European Union continued to drive photocell installation with an additional 4 592.3 MWp in 2008, or 151.6% growth over 2007. However, European growth prospects for the photovoltaic market in 2009 are being dampened by the global financial crisis and the scheduled slow-down of the Spanish market. (author)

Local irradiation effects of one-dimensional ZnO based self-powered asymmetric Schottky barrier UV photodetector

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yaxue [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Qi, Junjie, E-mail: junjieqi@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Biswas, Chandan [Department of Electrical Engineering, University of California Los Angeles, California 90095 (United States); Li, Feng; Zhang, Kui; Li, Xin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083 (China)

2015-09-15

A self-powered metal-semiconductor-metal (MSM) UV photodetector was successfully fabricated based on Ag/ZnO/Au structure with asymmetric Schottky barriers. This exhibits excellent performance compared to many previous studies. Very high photo-to-dark current ratio (approximately 10{sup 5}–10{sup 6}) was demonstrated without applying any external bias, and very fast switching time of less than 30 ms was observed during the investigation. Opposite photocurrent direction was generated by irradiating different Schottky diodes in the fabricated photodetector. Furthermore, the device performance was optimized by largely irradiating both the ZnO microwire (MW) junctions. Schottky barrier effect theory and O{sub 2} adsorption–desorption theories were used to investigate the phenomenon. The device has potential applications in self-powered UV detection field and can be used as electrical power source for electronic, optoelectronic and mechanical devices. - Highlights: • A self-powered Schottky barrier UV photodetector based on 1-D ZnO is fabricated. • For the first time we investigate the local irradiation effects of UV detector. • Irradiating both the junctions and ZnO can optimize the performance of the device.

Thin Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K.

1998-11-19

The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

Solar photovoltaics for development applications

Energy Technology Data Exchange (ETDEWEB)

Shepperd, L.W. [Florida Solar Energy Center, Cape Canaveral, FL (United States); Richards, E.H. [Sandia National Labs., Albuquerque, NM (United States)

1993-08-01

This document introduces photovoltaic technology to individuals and groups specializing in development activities. Examples of actual installations illustrate the many services supplied by photovoltaic systems in development applications, including water pumping, lighting, health care, refrigeration, communications, and a variety of productive uses. The various aspects of the technology are explored to help potential users evaluate whether photovoltaics can assist them in achieving their organizational goals. Basic system design, financing techniques, and the importance of infrastructure are included, along with additional sources of information and major US photovoltaic system suppliers.

Photovoltaic energy systems. Program summary

Energy Technology Data Exchange (ETDEWEB)

None

1982-01-01

The ongoing research, development, and demonstration efforts of the Photovoltaics Program are highlighted and each of the US Department of Energy's current photovoltaics projects initiated or renewed during fiscal year 1981 is described, including its title, directing organization, project engineer, contractor, principal investigator, contract period, funding, and objectives. The Photovoltaics Program is briefly summarized, including the history and organization and highlights of the research and development and of planning, assessment, and integration. Also summarized is the Federal Photovoltaic Utilization Program. An exhaustive bibliography is included. (LEW)

Federal policies to promote the widespread utilization of photovoltaic systems. Supplement: review and critique

Energy Technology Data Exchange (ETDEWEB)

Smith, J.L.

1980-04-15

This document is intended as a supplement to the two-volume report entitled Federal Policies to Promote the Widespread Utilization of Photovoltaic Systems that was submitted to Congress by the Department of Energy in February and April of 1980. This supplement contains review comments prepared by knowledgeable experts who reviewed early drafts of the Congressional report. Responses to the review comments by the Jet Propulsion Laboratory, preparer of the Congressional report, are also included in this supplement. The Congressional report, mandated in the Solar Photovoltaic Energy Research, Development, and Demonstration Act of 1978 (P.L. 95-590), discusses various issues related to promoting the deployment of photovoltaic systems through the Federal Photovoltaic Program. Various program strategies and funding levels are examined.

From low cost to high tech: possible margins of technical progress in photovoltaic

International Nuclear Information System (INIS)

Guillemoles, J.F.

2009-01-01

Photovoltaic is developing in response to 3 requirements: conservation of the environment, security in energy, and economic growth. Given this, the terawatt (TW) scale should be used to measure the magnitude of energy needs. Can solar, in particular photovoltaic, power meet these needs? This has nothing to do with the availability of solar energy - in a single hour, the sun sends to the earth as much energy as the electricity consumed by all of humanity during an entire year. Instead, it raises questions about the industrial deployment and, eventually, the availability of raw materials and land. The sustainable development of photovoltaic power implies wisely using resources (raw materials, energy and capital) and improving the efficiency not only of the process for transforming resources into photovoltaic units but also of the photovoltaic units themselves for converting light into electricity. It is worth noting that the predictable change of scale in the photovoltaic industry will have implications for this industry's deployment on a large scale. This deployment depends on: the availability of technology, know-how, capital and raw materials; the cost of investments; the speed of implementation; and the rhythm of production of cells. (author)

Enhanced Switchable Ferroelectric Photovoltaic Effects in Hexagonal Ferrite Thin Films via Strain Engineering.

Science.gov (United States)

Han, Hyeon; Kim, Donghoon; Chu, Kanghyun; Park, Jucheol; Nam, Sang Yeol; Heo, Seungyang; Yang, Chan-Ho; Jang, Hyun Myung

2018-01-17

Ferroelectric photovoltaics (FPVs) are being extensively investigated by virtue of switchable photovoltaic responses and anomalously high photovoltages of ∼10 4 V. However, FPVs suffer from extremely low photocurrents due to their wide band gaps (E g ). Here, we present a promising FPV based on hexagonal YbFeO 3 (h-YbFO) thin-film heterostructure by exploiting its narrow E g . More importantly, we demonstrate enhanced FPV effects by suitably exploiting the substrate-induced film strain in these h-YbFO-based photovoltaics. A compressive-strained h-YbFO/Pt/MgO heterojunction device shows ∼3 times enhanced photovoltaic efficiency than that of a tensile-strained h-YbFO/Pt/Al 2 O 3 device. We have shown that the enhanced photovoltaic efficiency mainly stems from the enhanced photon absorption over a wide range of the photon energy, coupled with the enhanced polarization under a compressive strain. Density functional theory studies indicate that the compressive strain reduces E g substantially and enhances the strength of d-d transitions. This study will set a new standard for determining substrates toward thin-film photovoltaics and optoelectronic devices.

Donor and Acceptor Polymers for Bulk Hetero Junction Solar Cell and Photodetector Applications

KAUST Repository

Cruciani, Federico

2018-01-01

-13% and being a step closer to practical applications. Among the photodetectors (PD), low band gap polymer blended with PCBM decked out the attention, given their extraordinary range of detection from UV to IR and high detectivity values reached so far, compared

Photovoltaic Bias Generator

Science.gov (United States)

2018-02-01

Department of the Army position unless so designated by other authorized documents. Citation of manufacturer’s or trade names does not constitute an... Interior view of the photovoltaic bias generator showing wrapped-wire side of circuit board...3 Fig. 4 Interior view of the photovoltaic bias generator showing component side of circuit board

Robust and Air-Stable Sandwiched Organo-Lead Halide Perovskites for Photodetector Applications

KAUST Repository

Mohammed, Omar F.

2016-02-25

We report the simplest possible method to date for fabricating robust, air-stable, sandwiched perovskite photodetectors. Our proposed sandwiched structure is devoid of electron or hole transporting layers and also the expensive electrodes. These simpler architectures may have application in the perovskite-only class of solar cells scaling up towards commercialization.

Interpretation of photovoltaic pulses in normal YBa2Cu3O7

International Nuclear Information System (INIS)

Scott, J.F.

1990-01-01

200 mV photovoltaic voltage pulses reported [C. L. Chang, A. Kleinhammes, W. G. Moulton, and L. R. Testardi Phys. Rev. B (in press)] for YBa 2 Cu 3 O 7 illuminated with 2--30 mJ/cm 2 at 532 nm are interpreted in terms of the complete theory of photovoltaic responses, including off-diagonal terms not recognized in the original theory. The resulting predictions are in reasonable quantitative agreement with experiment

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Science.gov (United States)

Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; Shaner, E. A.

2015-11-01

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292 . The measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. Excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

THE ANALISYS OF THE PHOTOVOLTAIC AND ELECTRIC PARAMETERS OF A COOLING HYBRID SYSTEM. CASE STUDY

Directory of Open Access Journals (Sweden)

MARE R.

2017-09-01

Full Text Available The paper presents the interdependence between photovoltaic and electric parameters of a solar thermoelectric cooler. It emphasises the importance of the solar radiation during two experiments made in the same day, in different weather conditions. Also, it is shown that while the photovoltaic power is directly dependent on the photovoltaic current intensity, the electric power varies along with the voltage. All these have great influence upon the battery – the main component responsible for the operation of the cooling hybrid system.

Transparent contacts for stacked compound photovoltaic cells

Science.gov (United States)

Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

2016-11-29

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

Proposing Wavelet-Based Low-Pass Filter and Input Filter to Improve Transient Response of Grid-Connected Photovoltaic Systems

Directory of Open Access Journals (Sweden)

Bijan Rahmani

2016-08-01

Full Text Available Available photovoltaic (PV systems show a prolonged transient response, when integrated into the power grid via active filters. On one hand, the conventional low-pass filter, employed within the integrated PV system, works with a large delay, particularly in the presence of system’s low-order harmonics. On the other hand, the switching of the DC (direct current–DC converters within PV units also prolongs the transient response of an integrated system, injecting harmonics and distortion through the PV-end current. This paper initially develops a wavelet-based low-pass filter to improve the transient response of the interconnected PV systems to grid lines. Further, a damped input filter is proposed within the PV system to address the raised converter’s switching issue. Finally, Matlab/Simulink simulations validate the effectiveness of the proposed wavelet-based low-pass filter and damped input filter within an integrated PV system.

Photovoltaic array mounting apparatus, systems, and methods

Science.gov (United States)

West, Jack Raymond; Atchley, Brian; Hudson, Tyrus Hawkes; Johansen, Emil

2016-01-05

A photovoltaic array, including: (a) supports laid out on a surface in rows and columns; (b) photovoltaic modules positioned on top of the supports; and (c) fasteners connecting the photovoltaic modules to the supports, wherein the supports have an upper pedestal surface and a lower pedestal surface such that the photovoltaic modules are positioned at a non-horizontal angle when edges of the photovoltaic modules are positioned on top of the upper and lower pedestal surfaces, and wherein a portion of the fasteners rotate to lock the photovoltaic modules onto the supports.

Dual-Phase CsPbBr3 -CsPb2 Br5 Perovskite Thin Films via Vapor Deposition for High-Performance Rigid and Flexible Photodetectors.

Science.gov (United States)

Tong, Guoqing; Li, Huan; Li, Danting; Zhu, Zhifeng; Xu, Enze; Li, Guopeng; Yu, Linwei; Xu, Jun; Jiang, Yang

2018-02-01

Inorganic perovskites with special semiconducting properties and structures have attracted great attention and are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process with a controlled excess of PbBr 2 , dual-phase all-inorganic perovskite composite CsPbBr 3 -CsPb 2 Br 5 thin films are prepared as light-harvesting layers and incorporated in a photodetector (PD). The PD has a high responsivity and detectivity of 0.375 A W -1 and 10 11 Jones, respectively, and a fast response time (from 10% to 90% of the maximum photocurrent) of ≈280 µs/640 µs. The device also shows an excellent stability in air for more than 65 d without encapsulation. Tetragonal CsPb 2 Br 5 provides satisfactory passivation to reduce the recombination of the charge carriers, and with its lower free energy, it enhances the stability of the inorganic perovskite devices. Remarkably, the same inorganic perovskite photodetector is also highly flexible and exhibits an exceptional bending performance (>1000 cycles). These results highlight the great potential of dual-phase inorganic perovskite films in the development of optoelectronic devices, especially for flexible device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photovoltaic dependence of photorefractive grating on the externally applied dc electric field

Science.gov (United States)

Maurya, M. K.; Yadav, R. A.

2013-04-01

Photovoltaic dependence of photorefractive grating (i.e., space-charge field and phase-shift of the index grating) on the externally applied dc electric field in photovoltaic-photorefractive materials has been investigated. The influence of photovoltaic field (EPhN), diffusion field and carrier concentration ratio r (donor/acceptor impurity concentration ratio) on the space-charge field (SCF) and phase-shift of the index grating in the presence and absence of the externally applied dc electric field have also been studied in details. Our results show that, for a given value of EPhN and r, the magnitude of the SCF and phase-shift of the index grating can be enhanced significantly by employing the lower dc electric field (EONphotovoltaic-photorefractive crystal and higher value of diffusion field (EDN>40). Such an enhancement in the magnitude of the SCF and phase-shift of the index grating are responsible for the strongest beam coupling in photovoltaic-photorefractive materials. This sufficiently strong beam coupling increases the two-beam coupling gain that may be exceed the absorption and reflection losses of the photovoltaic-photorefractive sample, and optical amplification can occur. The higher value of optical amplification in photovoltaic-photorefractive sample is required for the every applications of photorefractive effect so that technology based on the photorefractive effect such as holographic storage devices, optical information processing, acousto-optic tunable filters, gyro-sensors, optical modulators, optical switches, photorefractive-photovoltaic solitons, biomedical applications, and frequency converters could be improved.

Photovoltaics in Poland

International Nuclear Information System (INIS)

Pietruszko, Stanislaw M.

2003-01-01

The legislative framework and financing possibilities for photovoltaics (PV) in Poland are presented. Barriers that exist or can be encountered in implementing PV technology in Poland are identified. This paper also discusses future prospects and possibilities for developing photovoltaics in Poland. Finally, the paper suggests ways to promote, disseminate, and deploy PV technology in Poland. (Author)

Clean electricity from photovoltaics

CERN Document Server

Green, Martin A

2015-01-01

The second edition of Clean Electricity from Photovoltaics , first published in 2001, provides an updated account of the underlying science, technology and market prospects for photovoltaics. All areas have advanced considerably in the decade since the first edition was published, which include: multi-crystalline silicon cell efficiencies having made impressive advances, thin-film CdTe cells having established a decisive market presence, and organic photovoltaics holding out the prospect of economical large-scale power production. Contents: The Past and Present (M D Archer); Limits to Photovol

Electrical circuit model of ITO/AZO/Ge photodetector.

Science.gov (United States)

Patel, Malkeshkumar; Kim, Joondong

2017-10-01

In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

Deformable paper origami optoelectronic devices

KAUST Repository

He, Jr-Hau; Lin, Chun-Ho

2017-01-01

Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a

Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

Science.gov (United States)

Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

2018-04-01

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.

Graphene/black phosphorus heterostructured photodetector

Science.gov (United States)

Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

2018-06-01

Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

A thermal model for photovoltaic panels under varying atmospheric conditions

International Nuclear Information System (INIS)

Armstrong, S.; Hurley, W.G.

2010-01-01

The response of the photovoltaic (PV) panel temperature is dynamic with respect to the changes in the incoming solar radiation. During periods of rapidly changing conditions, a steady state model of the operating temperature cannot be justified because the response time of the PV panel temperature becomes significant due to its large thermal mass. Therefore, it is of interest to determine the thermal response time of the PV panel. Previous attempts to determine the thermal response time have used indoor measurements, controlling the wind flow over the surface of the panel with fans or conducting the experiments in darkness to avoid radiative heat loss effects. In real operating conditions, the effective PV panel temperature is subjected to randomly varying ambient temperature and fluctuating wind speeds and directions; parameters that are not replicated in controlled, indoor experiments. A new thermal model is proposed that incorporates atmospheric conditions; effects of PV panel material composition and mounting structure. Experimental results are presented which verify the thermal behaviour of a photovoltaic panel for low to strong winds.

p型層としてCuIを用いたSelf-powered紫外線フォトディテクタ

OpenAIRE

山田直臣||ヤマダ, ナオオミ||Yamada, Naoomi; 近藤, 祐未||コンドウ, ユウミ||Kondo, Yuumi

2018-01-01

In this paper, we propose that CuI/a-IGZO heterojunctions can be utilized as a fast-response self-powered ultraviolet (UV) photodetector. CuI/a-IGZO heterojunctions were found to show photovoltaic effect under UV illumination at a wavelength of 365 nm. The charge separation of the photo-generated electrons and holes mainly occurs in the depletion layer in the a-IGZO layer. In addition, the a-IGZO serves as an electron-transport layer as well. On the other hand, the CuI layer plays an importan...

Development of TiBr semiconductor crystal for applications as radiation detector and photodetector

International Nuclear Information System (INIS)

Oliveira, Icimone Braga de

2006-01-01

In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by 241 Am (59 keV), 133 Ba (80 e 355 keV), 57 Co (122 keV), 22 Na (511 keV) and 137 Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

Materials for Photovoltaic Applications

Science.gov (United States)

Dimova-Malinovska, Doriana

Energy priorities are changing nowadays. As mankind will probably have to face energy crisis, factors such as energy independence, energy security, stability of energy supply and the variety of energy sources become much more vital these days. Photovoltaics is exceptional compared to other renewable sources of energy due to its wide opportunity to gain energetic and environmental benefits. An overview of the present state of knowledge of the materials aspects of photovoltaic cells will be given, and new semiconductor materials, including nanomaterials, with potential for application in photovoltaic devices will be identified.

Parametric study of laser photovoltaic energy converters

Science.gov (United States)

Walker, G. H.; Heinbockel, J. H.

1987-01-01

Photovoltaic converters are of interest for converting laser power to electrical power in a space-based laser power system. This paper describes a model for photovoltaic laser converters and the application of this model to a neodymium laser silicon photovoltaic converter system. A parametric study which defines the sensitivity of the photovoltaic parameters is described. An optimized silicon photovoltaic converter has an efficiency greater than 50 percent for 1000 W/sq cm of neodymium laser radiation.

Photoresponse properties of large area MoS2 metal–semiconductor–metal photodetectors

Science.gov (United States)

Ko, Tsung-Shine; Huang, Yu-Jen; Lin, Der-Yuh; Lin, Chia-Feng; Hong, Bo-Syun; Chen, Hone-Zern

2018-04-01

In this study, a large-area molybdenum disulfide (MoS2) thin film was obtained by low pressure thermal sulfurization. Raman scattering spectrum shows that the peaks at 374 and 403 cm‑1 are from the MoS2 thin film. XRD result reveals peaks at 33 and 58.5° indicating MoS2(100) and (110) crystal planes. By using gold (Au), silver (Ag), and aluminum (Al) as contact materials on the MoS2 thin film, photoresponsivity results indicate that Ag is a suitable material for obtaining a high responsivity for a high-performance photodetector (PD). Photocurrent mapping measurements also reveal that Ag contacts have the best carrier transport characteristic with carrier diffusion length of 101 µm among these contacts. Furthermore, we investigated metal–semiconductor–metal MoS2 thin film PDs with interdigitated fingers of 300, 400, 500, and 600 µm contact widths, which showed that the large contact widths could produce a high photoresponse for PD application owing to low resistance.

Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.

Science.gov (United States)

Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun

2015-09-09

Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.

Photovoltaic research and development

CSIR Research Space (South Africa)

Cummings, F

2009-09-01

Full Text Available Photovoltaic (PV) is the direct conversion of sunlight into electrical energy through a solar cell. This presentation consists of an introduction to photovoltaics, the South African PV research roadmap, a look at the CSIR PV research and development...

Case Study - Monitoring the Photovoltaic Panels

OpenAIRE

PACURAR Ana Talida; TOADER Dumitru; PACURAR Cristian

2014-01-01

The photovoltaic cell represents one of the most dynamic and attractive way to converts renewable energy sources in electricity production. That means to convert solar energy into electricity. In this paper is presented a analogy between two types of photovoltaic panels installed, with educational role for students. Also the objective of this paper is to estimate the performance of photovoltaic panels and to provide the best solution for industry. These two types of photovoltaic panels wer...

A Self-Powered and Flexible Organometallic Halide Perovskite Photodetector with Very High Detectivity.

Science.gov (United States)

Leung, Siu-Fung; Ho, Kang-Ting; Kung, Po-Kai; Hsiao, Vincent K S; Alshareef, Husam N; Wang, Zhong Lin; He, Jr-Hau

2018-02-01

Flexible and self-powered photodetectors (PDs) are highly desirable for applications in image sensing, smart building, and optical communications. In this paper, a self-powered and flexible PD based on the methylammonium lead iodide (CH 3 NH 3 PBI 3 ) perovskite is demonstrated. Such a self-powered PD can operate even with irregular motion such as human finger tapping, which enables it to work without a bulky external power source. In addition, with high-quality CH 3 NH 3 PBI 3 perovskite thin film fabricated with solvent engineering, the PD exhibits an impressive detectivity of 1.22 × 10 13 Jones. In the self-powered voltage detection mode, it achieves a large responsivity of up to 79.4 V mW -1 cm -2 and a voltage response of up to ≈90%. Moreover, as the PD is made of flexible and transparent polymer films, it can operate under bending and functions at 360 ° of illumination. As a result, the self-powered, flexible, 360 ° omnidirectional perovskite PD, featuring high detectivity and responsivity along with real-world sensing capability, suggests a new direction for next-generation optical communications, sensing, and imaging applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and fabrication of prototype 6×6 cm2 microchannel plate photodetector with bialkali photocathode for fast timing applications

International Nuclear Information System (INIS)

Xie, Junqi; Byrum, Karen; Demarteau, Marcel; Gregar, Joseph; May, Edward; Virgo, Mathew; Wagner, Robert; Walters, Dean; Wang, Jingbo; Xia, Lei; Zhao, Huyue

2015-01-01

Planar microchannel plate-based photodetectors with a bialkali photocathode are able to achieve photon detection with very good time and position resolution. A 6×6 cm 2 photodetector production facility was designed and built at Argonne National Laboratory. Small form-factor MCP-based photodetectors completely constructed out of glass were designed and prototypes were successfully fabricated. Knudsen effusion cells were incorporated in the photocathode growth chamber to achieve uniform and high quantum efficiency photocathodes. The thin film uniformity was simulated and measured for an antimony film deposition, showing uniformity of better than 10%. Several prototype devices with bialkali photocathodes have been fabricated with the described system and their characteristics were evaluated in the large signal (multi-PE) limit. A typical prototype device exhibits time-of-flight resolution of ~27 psec and differential time resolution of ~9 psec, corresponding to spatial resolution of ~0.65 mm

Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

International Nuclear Information System (INIS)

Zhang, T. C.; Guo, Y.; Mei, Z. X.; Gu, C. Z.; Du, X. L.

2009-01-01

Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼10 4 at ±2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated

Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

Science.gov (United States)

Liu, Yu-Hsin

This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the

Development of plenoptic infrared camera using low dimensional material based photodetectors

Science.gov (United States)

Chen, Liangliang

Infrared (IR) sensor has extended imaging from submicron visible spectrum to tens of microns wavelength, which has been widely used for military and civilian application. The conventional bulk semiconductor materials based IR cameras suffer from low frame rate, low resolution, temperature dependent and highly cost, while the unusual Carbon Nanotube (CNT), low dimensional material based nanotechnology has been made much progress in research and industry. The unique properties of CNT lead to investigate CNT based IR photodetectors and imaging system, resolving the sensitivity, speed and cooling difficulties in state of the art IR imagings. The reliability and stability is critical to the transition from nano science to nano engineering especially for infrared sensing. It is not only for the fundamental understanding of CNT photoresponse induced processes, but also for the development of a novel infrared sensitive material with unique optical and electrical features. In the proposed research, the sandwich-structured sensor was fabricated within two polymer layers. The substrate polyimide provided sensor with isolation to background noise, and top parylene packing blocked humid environmental factors. At the same time, the fabrication process was optimized by real time electrical detection dielectrophoresis and multiple annealing to improve fabrication yield and sensor performance. The nanoscale infrared photodetector was characterized by digital microscopy and precise linear stage in order for fully understanding it. Besides, the low noise, high gain readout system was designed together with CNT photodetector to make the nano sensor IR camera available. To explore more of infrared light, we employ compressive sensing algorithm into light field sampling, 3-D camera and compressive video sensing. The redundant of whole light field, including angular images for light field, binocular images for 3-D camera and temporal information of video streams, are extracted and

Preparation of photovoltaic cells from sexithiophene-C-60 blends

NARCIS (Netherlands)

Veenstra, SC; Malliaras, GG; Brouwer, HJ; Esselink, FJ; Krasnikov, VV; vanHutten, PF; Wildeman, J; Jonkman, HT; Sawatzky, GA; Hadziioannou, G; Mohlmann, GR

1996-01-01

Large photovoltaic responses have been recently observed in devices based on conjugated polymer-C-60 blends. Their enhanced performance, which relies on the formation of a bicontinuous network of donor-acceptor heterojunctions, is very sensitive to the morphology of the blend. In this paper, we

Grounds of two positions photovoltaic panels

OpenAIRE

Castán Fortuño, Fernando

2008-01-01

The objective of this Master Thesis is to find the optimum positioning for a two positions photovoltaic panel. Hence, it will be implemented a model in order to optimize the energy of the sun that the photovoltaic panel is receiving by its positioning. Likewise this project will include the comparison with other photovoltaic panel systems as the single position photovoltaics panels. Ultimately, it is also going to be designed a system array for the optimized model of two positions photovoltai...

Natural Flow Air Cooled Photovoltaics

Science.gov (United States)

Tanagnostopoulos, Y.; Themelis, P.

2010-01-01

Our experimental study aims to investigate the improvement in the electrical performance of a photovoltaic installation on buildings through cooling of the photovoltaic panels with natural air flow. Our experimental study aims to investigate the improvement in the electrical performance of a photovoltaic installation on buildings through cooling of the photovoltaic panels with natural air flow. We performed experiments using a prototype based on three silicon photovoltaic modules placed in series to simulate a typical sloping building roof with photovoltaic installation. In this system the air flows through a channel on the rear side of PV panels. The potential for increasing the heat exchange from the photovoltaic panel to the circulating air by the addition of a thin metal sheet (TMS) in the middle of air channel or metal fins (FIN) along the air duct was examined. The operation of the device was studied with the air duct closed tightly to avoid air circulation (CLOSED) and the air duct open (REF), with the thin metal sheet (TMS) and with metal fins (FIN). In each case the experiments were performed under sunlight and the operating parameters of the experimental device determining the electrical and thermal performance of the system were observed and recorded during a whole day and for several days. We collected the data and form PV panels from the comparative diagrams of the experimental results regarding the temperature of solar cells, the electrical efficiency of the installation, the temperature of the back wall of the air duct and the temperature difference in the entrance and exit of the air duct. The comparative results from the measurements determine the improvement in electrical performance of the photovoltaic cells because of the reduction of their temperature, which is achieved by the naturally circulating air.

Applied photovoltaics

CERN Document Server

Wenham, Stuart R; Watt, Muriel E; Corkish, Richard; Sproul, Alistair

2013-01-01

The new edition of this thoroughly considered textbook provides a reliable, accessible and comprehensive guide for students of photovoltaic applications and renewable energy engineering. Written by a group of award-winning authors it is brimming with information and is carefully designed to meet the needs of its readers. Along with exercises and references at the end of each chapter, it features a set of detailed technical appendices that provide essential equations, data sources and standards. The new edition has been fully updated with the latest information on photovoltaic cells,

Special issue photovoltaic

International Nuclear Information System (INIS)

2004-01-01

In this letter of the INES (french National Institute of the Solar Energy), a special interest is given to photovoltaic realizations in Europe. Many information are provided on different topics: the China future fifth world producer of cells in 2005, batteries and hydrogen to storage the solar energy and a technical sheet on a photovoltaic autonomous site installation for electric power production. (A.L.B.)

Exergy analysis of photovoltaic solar collector

International Nuclear Information System (INIS)

Sopian, K.; Othman, M.Y.Hj.

1998-01-01

The exergy analysis (availability or second law analysis) is applied to the photovoltaic thermal solar collector. Photovoltaic thermal collector is a special type of solar collector where electricity and heat are produced simultaneously. The electricity produced from the photovoltaic thermal collector is all converted into useful work. The available quantity of the heat collected can readily be determined by taking into account both the quantity (heat quantity) and quality ( a function of temperature) of the thermal energy. Therefore, using the concept of exergy allows heat produced from the thermal collector and the electricity generated from the photovoltaic cells to be compared or to be evaluated on the basis of a common measure such as the effectiveness on solar energy collection or the total amount of available energy. In this paper, the effectiveness of solar energy collection is called combined photovoltaic thermal exergy efficiency. An experimental setup of a double pas photovoltaic thermal solar collector has been deigned, fabricated and tested. (author)

Pyroelectric photovoltaic spatial solitons in unbiased photorefractive crystals

International Nuclear Information System (INIS)

Jiang, Qichang; Su, Yanli; Ji, Xuanmang

2012-01-01

A new type of spatial solitons i.e. pyroelectric photovoltaic spatial solitons based on the combination of pyroelectric and photovoltaic effect is predicted theoretically. It shows that bright, dark and grey spatial solitons can exist in unbiased photovoltaic photorefractive crystals with appreciable pyroelectric effect. Especially, the bright soliton can form in self-defocusing photovoltaic crystals if it gives larger self-focusing pyroelectric effect. -- Highlights: ► A new type of spatial soliton i.e. pyroelectric photovoltaic spatial soliton is predicted. ► The bright, dark and grey pyroelectric photovoltaic spatial soliton can form. ► The bright soliton can also exist in self-defocusing photovoltaic crystals.

International photovoltaic program. Volume 2: Appendices

Science.gov (United States)

Costello, D.; Koontz, R.; Posner, D.; Heiferling, P.; Carpenter, P.; Forman, S.; Perelman, L.

1979-01-01

The results of analyses conducted in preparation of an international photovoltaic marketing plan are summarized. Included are compilations of relevant statutes and existing Federal programs; strategies designed to expand the use of photovoltaics abroad; information on the domestic photovoltaic plan and its impact on the proposed international plan; perspectives on foreign competition; industry views on the international photovoltaic market and ideas about the how US government actions could affect this market;international financing issues; and information on issues affecting foreign policy and developing countries.

Solar photovoltaic reflective trough collection structure

Science.gov (United States)

Anderson, Benjamin J.; Sweatt, William C.; Okandan, Murat; Nielson, Gregory N.

2015-11-19

A photovoltaic (PV) solar concentration structure having at least two troughs encapsulated in a rectangular parallelepiped optical plastic structure, with the troughs filled with an optical plastic material, the troughs each having a reflective internal surface and approximately parabolic geometry, and the troughs each including photovoltaic cells situated so that light impinging on the optical plastic material will be concentrated onto the photovoltaic cells. Multiple structures can be connected to provide a solar photovoltaic collection system that provides portable, efficient, low-cost electrical power.

Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS3)

Science.gov (United States)

Liu, Sijie; Xiao, Wenbo; Zhong, Mianzeng; Pan, Longfei; Wang, Xiaoting; Deng, Hui-Xiong; Liu, Jian; Li, Jingbo; Wei, Zhongming

2018-05-01

Photodetectors with high polarization sensitivity are in great demand in advanced optical communication. Here, we demonstrate that photodetectors based on titanium trisulfide (TiS3) are extremely sensitive to polarized light (from visible to the infrared), due to its reduced in-plane structural symmetry. By density functional theory calculation, TiS3 has a direct bandgap of 1.13 eV. The highest photoresponsivity reaches 2500 A W-1. What is more, in-plane optical selection caused by strong anisotropy leads to the photoresponsivity ratio for different directions of polarization that can reach 4:1. The angle-dependent photocurrents of TiS3 clearly display strong linear dichroism. Moreover, the Raman peak at 370 cm-1 is also very sensitive to the polarization direction. The theoretical optical absorption of TiS3 is calculated by using the HSE06 hybrid functional method, in qualitative agreement with the observed experimental photoresponsivity.

Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

International Nuclear Information System (INIS)

Tongbram, B.; Shetty, S.; Ghadi, H.; Adhikary, S.; Chakrabarti, S.

2015-01-01

We investigate and compare the performance of 30 layers strain-coupled quantum dot (SCQD) infrared photodetectors capped with one of two different layers: a quaternary (In 0.21 Al 0.21 Ga 0.58 As) or ternary (In 0.15 Ga 0.85 As) alloy of 30 Aa and a GaAs layer with a thickness of 120-150 Aa. Measurements of optical properties, spectral responsivity, and cross-sectional transmission electron microscopy were conducted. Results showed that quaternary capping yielded more superior multilayer QD infrared photodetectors than ternary capping. Quaternary capping resulted in enhanced dot size, order, and uniformity of the QD array. The presence of Al in the capped layer helped in the reduction in dark current density and spectral linewidth as well as led to higher electron confinement of the QDs and enhanced device detectivity. The vertically ordered SCQD system with quaternary capping exhibited higher peak detectivity (∝10 10 cm Hz 1/2 /W) than that with ternary capping (∝10 7 cm Hz 1/2 /W). In addition, a very low noise current density of ∝10 -16 A/cm 2 Hz 1/2 at 77 K was achieved with quaternary-capped QDs. (orig.)

Characterization of Photovoltaic Generators

Science.gov (United States)

Boitier, V.; Cressault, Y.

2011-01-01

This paper discusses photovoltaic panel systems and reviews their electrical properties and use in several industrial fields. We explain how different photovoltaic panels may be characterized by undergraduate students at university using simple methods to retrieve their electrical properties (power, current and voltage) and compare these values…

Photovoltaic solar energy; Photovoltaische Solarenergie

Energy Technology Data Exchange (ETDEWEB)

NONE

2012-07-01

Within the 27th symposium of the Ostbayerische Technologie-Transfer-Institut e.V. (Regensburg, Federal Republic of Germany) from 29th February to 02th March, 2012, at Banz monastery near Bad Staffelstein (Federal Republic of Germany), the following lectures were held: (1) EEG 12: State of the art and impacts (K. Freier); (2) Promising markets - PV market potentials Europe (M. Lohr); (3) Expansion requires restructuring - Research promotion for renewable energy and renewable energy supply systems (K. Deller); (4) Fields of application and potentials of photovoltaics in Germany without an enhanced EEG compensation (V. Quaschning); (5) ''Smart Solar Grid'' - Results of the analysis and solar roof potential of the first test area of the public utility Ulm (H. Ruf); (6) Power limitation at PV plants - Adjustment of modelling methods and comparison of different location (J. von Appen); (7) Exploitations to the power limitation till to 70 % of the module capacity (B. Giesler); (8) Actual procedural results of the clearing house EEG to photovoltaics and modifications at PV by means of the EEG 2012 (M. Winkler); (9) Grid integration of PV plants from a legal point of view (M. von Oppen); (10) EEG 2012 - Abetment or brake? PV and other renewable energies in comparison (M. Reichmuth); (11) On the precision of radiation and photovoltaics component models (J. Schumacher); (12) Impact of global radiation data with different properties on the performance ratio and prognosticated energy efficiency of photovoltaic power plants (M. Egler); (13) Quantification of superelevations of irradiation in high-resolution DWD datasets for different locations in Germany (M. Zehner); (14) Prognosis of the regional PV performance with measuring data of PV plant and satellite pictures (Y.-M. Saint-Drenan); (15) Photovoltaics and wind power: perfectly complementing power technologies using Central Germany as an example (C. Breyer); (16) Which and how much storages are necessary

The players of the photovoltaic sector in France

International Nuclear Information System (INIS)

Houot, G.

2012-01-01

This document reviews 338 players in the French photovoltaic industry. Each player can be the owner of a photovoltaic power plant, or its operator, or the manufacturer of photovoltaic systems, or the manufacturer of components involved in photovoltaic systems, or the equipment wholesaler, or the designer of photovoltaic projects, or the photovoltaic system installer. For each player some pieces of information are gathered: a brief history of the enterprise, the enterprise activity, its staff, its turnover, its main achievements and its prospects. (A.C.)

Quantum Well Infrared Photodetectors Physics and Applications

CERN Document Server

Schneider, Harald

2007-01-01

Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Electrical circuit model of ITO/AZO/Ge photodetector

Directory of Open Access Journals (Sweden)

Malkeshkumar Patel

2017-10-01

Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

Nanostructured Photovoltaics for Space Power

Data.gov (United States)

National Aeronautics and Space Administration — The NASA NSTRF proposal entitled Nanostructured Photovoltaics for Space Power is targeted towards research to improve the current state of the art photovoltaic...

Print-Assisted Photovoltaic Assembly (PAPA)

Data.gov (United States)

National Aeronautics and Space Administration — This proposal describes the development of an innovative method for the fabrication of thin-film photovoltaic panels. Print-Assisted Photovoltaic Assembly, or PAPA,...

Plastic photovoltaic devices

OpenAIRE

Niyazi Serdar Sariciftci

2004-01-01

The development of organic, polymer-based photovoltaic elements has introduced the possibility of obtaining cheap and easy-to-produce energy from light. Photoinduced electron transfer from donor-type semiconducting polymers onto acceptor-type polymers or molecules, such as C60, is the basic phenomenon utilized in these photovoltaic devices. This process mimics the early photo-effects in natural photosynthesis. The polymeric semiconductors combine the photoelectrical properties of inorganic se...

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

Science.gov (United States)

Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.

1999-01-01

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

Dynamic Control Based Photovoltaic Illuminating System

Directory of Open Access Journals (Sweden)

Zhang Chengkai

2016-01-01

Full Text Available Smart LED illumination system can use the power from whether the photovoltaic cell or the power grid automatically based on the SOC (State Of Charge of the photovoltaic cell. This paper proposes a feedback control of the photovoltaic cells and a dynamic control strategy for the Energy system. The dynamic control strategy is used to determine the switching state of the photovoltaic cell based on the illumination load in the past one hour and the battery capacity. These controls are manifested by experimental prototype that the control scheme is correct and effective.

Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

Science.gov (United States)

Rothmayr, F.; Pfenning, A.; Kistner, C.; Koeth, J.; Knebl, G.; Schade, A.; Krueger, S.; Worschech, L.; Hartmann, F.; Höfling, S.

2018-04-01

We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 μm, and the RTD-PDs show peak-to-valley current ratios up to 4.3 with a peak current density of 12 A/cm-2. The incorporation of the quaternary absorption layer enables the RTD-PDs to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm, respectively, the RTD-PDs reach responsivities up to 0.97 A/W. Thus, RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.

2D Semiconductors for Valley-Polarized LEDs and Photodetectors

Science.gov (United States)

Yu, Ting

The recently discovered two-dimensional (2D) semiconductors, such as transitional-metal-dichalcogenide monolayers, have aroused great interest due to the underlying quantum physics and the appealing optoelectronic applications like atomically thin light-emitting diodes (LEDs) and photodetectors. On the one hand, valley-polarized electroluminescence and photocurrent from such monolayers have not caused enough attention but highly demanded as building blocks for the new generation valleytronic applications. On the other hand, most reports on these devices are based on the mechanically exfoliated small samples. Considering real applications, a strategy which could offer mass-product and high compatibility to the current planar processes is greatly demanded. Large-area samples prepared by chemical vapour deposition (CVD) are perfect candidates towards such a goal. Here, we report electrically tunable valley-polarized electroluminescence and the selective spin-valley-coupled photocurrent in optoelectronic devices based on monolayer WS2 and MoS2 grown by CVD, exhibiting large electroluminescence and photocurrent dichroisms of 81% and 60%, respectively. The controllable valley polarization and emission components of the electroluminescence have been realized by varying electrical injection of carriers. For the observed helicity-dependent photocurrent, the circular photogalvanic effect at resonant excitations has been found to take the dominant responsibility.

Photovoltaic venture analysis. Final report. Volume III. Appendices

Energy Technology Data Exchange (ETDEWEB)

Costello, D.; Posner, D.; Schiffel, D.; Doane, J.; Bishop, C.

1978-07-01

This appendix contains a brief summary of a detailed description of alternative future energy scenarios which provide an overall backdrop for the photovoltaic venture analysis. Also included is a summary of a photovoltaic market/demand workshop, a summary of a photovoltaic supply workshop which used cross-impact analysis, and a report on photovoltaic array and system prices in 1982 and 1986. The results of a sectorial demand analysis for photovoltaic power systems used in the residential sector (single family homes), the service, commercial, and institutional sector (schools), and in the central power sector are presented. An analysis of photovoltaics in the electric utility market is given, and a report on the industrialization of photovoltaic systems is included. A DOE information memorandum regarding ''A Strategy for a Multi-Year Procurement Initiative on Photovoltaics (ACTS No. ET-002)'' is also included. (WHK)

Solidification and properties of photovoltaic silicon

International Nuclear Information System (INIS)

Anon.

2007-01-01

Strenuous efforts are being made to develop an economical process for purifying liquid metallurgical-grade silicon, in response to the growing shortages in high-purity silicon for use in manufacturing photovoltaic cells. A research project is studying this issue at C.E. Saclay, Gif-sur-Yvette, France, co-funded by ADEME (the French Environment and Energy Management Agency) and CEA-INSTN (French Atomic Energy Commission National Institute for Nuclear Science and Technology). (authors)

The design of cathode for organic photovoltaic devices

Science.gov (United States)

Song, De; Shi, Feng; Xia, Xuan; Li, Ye; Duanmu, Qingduo

2016-11-01

We have discussed the effect of the residual gas in the Al metal cathode deposition process and consequently influence the performance of organic photovoltaic devices (such as organic photoelectron detector or solar cell). We believe that the origin of degradation in Jsc and FF from the Al cathode device should be the formation of AlOx in the C60-Al interface, which contaminate the interface and plays a role like an energy barrier that block the charge collect process. To solve this problem the Ag and Alq3 layer had been inserted before the Al. Owing to the advantageous of Alq3 and Ag layer, the device which Al cathode prepared at a lower vacuum condition exhibits a comparable performance to that device which Al cathode deposited in regular situation. As an additional benefit, since the introducing of Alq3/Ag layer in the VOPc/C60 organic photovoltaic device performs a better near-infrared response, this phenomenon has been confirmed by means of both simulation and experimental data. So the design of our new cathode structure provides a degree of freedom to modulate the light absorption for organic photovoltaic devices in short-wave and long-wave.

Photovoltaic technologies

International Nuclear Information System (INIS)

Bagnall, Darren M.; Boreland, Matt

2008-01-01

Photovoltaics is already a billion dollar industry. It is experiencing rapid growth as concerns over fuel supplies and carbon emissions mean that governments and individuals are increasingly prepared to ignore its current high costs. It will become truly mainstream when its costs are comparable to other energy sources. At the moment, it is around four times too expensive for competitive commercial production. Three generations of photovoltaics have been envisaged that will take solar power into the mainstream. Currently, photovoltaic production is 90% first-generation and is based on silicon wafers. These devices are reliable and durable, but half of the cost is the silicon wafer and efficiencies are limited to around 20%. A second generation of solar cells would use cheap semiconductor thin films deposited on low-cost substrates to produce devices of slightly lower efficiency. A number of thin-film device technologies account for around 5-6% of the current market. As second-generation technology reduces the cost of active material, the substrate will eventually be the cost limit and higher efficiency will be needed to maintain the cost-reduction trend. Third-generation devices will use new technologies to produce high-efficiency devices. Advances in nanotechnology, photonics, optical metamaterials, plasmonics and semiconducting polymer sciences offer the prospect of cost-competitive photovoltaics. It is reasonable to expect that cost reductions, a move to second-generation technologies and the implementation of new technologies and third-generation concepts can lead to fully cost-competitive solar energy in 10-15 years. (author)

Theoretical Analysis of Interferometer Wave Front Tilt and Fringe Radiant Flux on a Rectangular Photodetector

Directory of Open Access Journals (Sweden)

Franz Konstantin Fuss

2013-09-01

Full Text Available This paper is a theoretical analysis of mirror tilt in a Michelson interferometer and its effect on the radiant flux over the active area of a rectangular photodetector or image sensor pixel. It is relevant to sensor applications using homodyne interferometry where these opto-electronic devices are employed for partial fringe counting. Formulas are derived for radiant flux across the detector for variable location within the fringe pattern and with varying wave front angle. The results indicate that the flux is a damped sine function of the wave front angle, with a decay constant of the ratio of wavelength to detector width. The modulation amplitude of the dynamic fringe pattern reduces to zero at wave front angles that are an integer multiple of this ratio and the results show that the polarity of the radiant flux changes exclusively at these multiples. Varying tilt angle causes radiant flux oscillations under an envelope curve, the frequency of which is dependent on the location of the detector with the fringe pattern. It is also shown that a fringe count of zero can be obtained for specific photodetector locations and wave front angles where the combined effect of fringe contraction and fringe tilt can have equal and opposite effects. Fringe tilt as a result of a wave front angle of 0.05° can introduce a phase measurement difference of 16° between a photodetector/pixel located 20 mm and one located 100 mm from the optical origin.

A kick to the photovoltaic industry

International Nuclear Information System (INIS)

Deye, M.; Remoue, A.

2010-01-01

In order to stop the speculation fever and to stabilize the photovoltaic trade, the French government has decided to lower some of the warranted electricity repurchase tariffs related to photovoltaic power generation. This announcement should have important impacts on the photovoltaic industry which will redirect its means and products towards the residential sector. (J.S.)

Process Development for Nanostructured Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Elam, Jeffrey W.

2015-01-01

Photovoltaic manufacturing is an emerging industry that promises a carbon-free, nearly limitless source of energy for our nation. However, the high-temperature manufacturing processes used for conventional silicon-based photovoltaics are extremely energy-intensive and expensive. This high cost imposes a critical barrier to the widespread implementation of photovoltaic technology. Argonne National Laboratory and its partners recently invented new methods for manufacturing nanostructured photovoltaic devices that allow dramatic savings in materials, process energy, and cost. These methods are based on atomic layer deposition, a thin film synthesis technique that has been commercialized for the mass production of semiconductor microelectronics. The goal of this project was to develop these low-cost fabrication methods for the high efficiency production of nanostructured photovoltaics, and to demonstrate these methods in solar cell manufacturing. We achieved this goal in two ways: 1) we demonstrated the benefits of these coatings in the laboratory by scaling-up the fabrication of low-cost dye sensitized solar cells; 2) we used our coating technology to reduce the manufacturing cost of solar cells under development by our industrial partners.

US Photovoltaic Patents, 1988--1990

Energy Technology Data Exchange (ETDEWEB)

1991-12-01

This document contains US patents on terrestrial photovoltaic (PV) power applications, including systems, components, and materials, as well as manufacturing and support functions. The patent entries in this document were issued from 1988 through 1990. The entries were located by searching USPA, the data base of the US Patent Office. The final search retrieved all patents under the class Batteries, Thermoelectric and Photoelectric'' and the subclasses Photoelectric,'' Testing,'' and Applications.'' The search also located patents that contained the words photovoltaic(s)'' or solar cell(s)'' and their derivatives. A manual search of the patents in the Solar Energy Research Institute (SERI) patent file augmented the data base search. After the initial list was compiled, most of the patents on the following subjects were excluded: space photovoltaic technology, use of the photovoltaic effect for detectors and subjects only peripherally concerned with photovoltaics. Some patents on these three subjects were included when it appeared that those inventions might be of use in terrestrial PV power technologies.

Survey of photovoltaic systems

Energy Technology Data Exchange (ETDEWEB)

1979-08-01

In developing this survey of photovoltaic systems, the University of Alabama in Huntsville assembled a task team to perform an extensive telephone survey of all known photovoltaic manufacturers. Three US companies accounted for 77% of the total domestic sales in 1978. They are Solarex Corporation, Solar Power Croporation, and ARCO Solar, Inc. This survey of solar photovoltaic (P/V) manufacturers and suppliers consists of three parts: a catalog of suppliers arranged alphabetically, data sheets on specific products, and typical operating, installation, or maintenance instructions and procedures. This report does not recommend or endorse any company product or information presented within as the results of this survey.

Photovoltaic barometer; Barometre photovoltaique

Energy Technology Data Exchange (ETDEWEB)

Anon.

2011-04-15

The photovoltaic sector is continuing on track, just as the extent of solar energy's electricity-generating potential is dawning on the public mind. The annual global installation figure was up more than twofold in 2010 (rising from just short of 7000 MWp in 2009). It leapt to over 16000 MWp, bringing worldwide installed photovoltaic capacity close to 38000 MWp. The photovoltaic power generated in the European Union at the end of 2010 reached 22.5 TWh which means an additional capacity of 13023 MWp during 2010. Concerning the cumulated installed capacity, Germany and Spain rank first and second in the European Union with respectively 17370 MWp and 3808 MWp

Radioisotope-powered photovoltaic generator

International Nuclear Information System (INIS)

McKlveen, J.W.; Uselman, J.

1979-01-01

Disposing of radioactive wastes from nuclear power plants has become one of the most important issues facing the nuclear industry. In a new concept, called a radioisotope photovoltaic generator, a portion of this waste would be used in conjunction with a scintillation material to produce light, with subsequent conversion into electricity via photovoltaic cells. Three types of scintillators and two types of silicon cells were tested in six combinations using 32 P as the radioisotope. The highest system efficiency, determined to be 0.5% when the light intensity was normalized to 100 mW/cm 2 , was obtained using a CsI crystal scintillator and a Helios photovoltaic cell

Photovoltaic Subcontract Program

Energy Technology Data Exchange (ETDEWEB)

Surek, Thomas; Catalano, Anthony

1993-03-01

This report summarizes the fiscal year (FY) 1992 progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Crystalline Materials and Advanced Concepts project, the Polycrystalline Thin Films project, Amorphous Silicon Research project, the Photovoltaic Manufacturing Technology (PVMaT) project, PV Module and System Performance and Engineering project, and the PV Analysis and Applications Development project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1992, and future research directions.

In0.15Ga0.85N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH3

Science.gov (United States)

Wang, Hongxia; Zhang, Xiaohan; Wang, Hailong; Lv, Zesheng; Li, Yongxian; Li, Bin; Yan, Huan; Qiu, Xinjia; Jiang, Hao

2018-05-01

InGaN visible-light metal-semiconductor-metal photodetectors with GaN interlayers deposited by pulsed NH3 were fabricated and characterized. By periodically inserting the GaN thin interlayers, the surface morphology of InGaN active layer is improved and the phase separation is suppressed. At 5 V bias, the dark current reduced from 7.0 × 10-11 A to 7.0 × 10-13 A by inserting the interlayers. A peak responsivity of 85.0 mA/W was measured at 420 nm and 5 V bias, corresponding to an external quantum efficiency of 25.1%. The insertion of GaN interlayers also lead to a sharper spectral response cutoff.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Science.gov (United States)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Optoelectronic insights into the photovoltaic losses from photocurrent, voltage, and energy perspectives

Science.gov (United States)

Shang, Aixue; An, Yidan; Ma, Dong; Li, Xiaofeng

2017-08-01

Photocurrent and voltage losses are the fundamental limitations for improving the efficiency of photovoltaic devices. It is indeed that a comprehensive and quantitative differentiation of the performance degradation in solar cells will promote the understanding of photovoltaic physics as well as provide a useful guidance to design highly-efficient and cost-effective solar cells. Based on optoelectronic simulation that addresses electromagnetic and carrier-transport responses in a coupled finite-element method, we report a detailed quantitative analysis of photocurrent and voltage losses in solar cells. We not only concentrate on the wavelength-dependent photocurrent loss, but also quantify the variations of photocurrent and operating voltage under different forward electrical biases. Further, the device output power and power losses due to carrier recombination, thermalization, Joule heat, and Peltier heat are studied through the optoelectronic simulation. The deep insight into the gains and losses of the photocurrent, voltage, and energy will contribute to the accurate clarifications of the performance degradation of photovoltaic devices, enabling a better control of the photovoltaic behaviors for high performance.

A MARKETING STRATEGY ON PHOTOVOLTAIC MARKET

Directory of Open Access Journals (Sweden)

Coita Dorin Cristian

2008-05-01

Full Text Available Photovoltaic is an increasingly important energy technology. Deriving energy from the sun offers numerous environmental benefits. It is an extremely clean energy source, and few other power-generating technologies have as little environmental impact as photovoltaic. In this article we explored some dimensions of photovoltaic market and suggested a marketing strategy for solar panels manufacturers

Photovoltaic restoration of sight with high visual acuity

Science.gov (United States)

Lorach, Henri; Goetz, Georges; Smith, Richard; Lei, Xin; Mandel, Yossi; Kamins, Theodore; Mathieson, Keith; Huie, Philip; Harris, James; Sher, Alexander; Palanker, Daniel

2015-01-01

Patients with retinal degeneration lose sight due to gradual demise of photoreceptors. Electrical stimulation of the surviving retinal neurons provides an alternative route for delivery of visual information. We demonstrate that subretinal arrays with 70 μm photovoltaic pixels provide highly localized stimulation, with electrical and visual receptive fields of comparable sizes in rat retinal ganglion cells. Similarly to normal vision, retinal response to prosthetic stimulation exhibits flicker fusion at high frequencies, adaptation to static images and non-linear spatial summation. In rats with retinal degeneration, these photovoltaic arrays provide spatial resolution of 64 ± 11 μm, corresponding to half of the normal visual acuity in pigmented rats. Ease of implantation of these wireless and modular arrays, combined with their high resolution opens the door to functional restoration of sight. PMID:25915832

Summary results of an assessment of research projects in the National Photovoltaics Program

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-07-01

The Office of Energy Research (OER) undertook an assessment of 115 research projects (listed in Appendix A) sponsored by the National Photovoltaics Program. The Program is located within the Office of Energy Efficiency and Renewable Energy (EE). This report summarizes the results of that review. The Office of Solar Energy Conversion is responsible for the management of the National Photovoltaics Program. This program focuses on assisting US industry in development of fundamental technology to bring advanced photovoltaic energy systems to commercial use. The purpose of the assessment was to determine the following: (1) the quality of research of individual projects; (2) the impact of these individual projects on the mission of the program; and (3) the priority of future research opportunities.

Novel Materials for Photovoltaic Technologies: Preprint

International Nuclear Information System (INIS)

Alivisatos, P.; Carter, S.; Ginley, D.; Nozik, A.; Meyer, G.; Rosenthal, S.

1999-01-01

While existing photovoltaic technologies continue to advance, there are still many exciting opportunities in the area of novel materials. These opportunities arise because there is a substantial need for reducing the costs associated with the preparation and processing of photovoltaics, and because the theoretically possible photovoltaic efficiencies have yet to be achieved in practical devices. Thus it remains reasonable to continue photovoltaic research activity aimed at entirely new approaches to processing and at entirely new materials as the active media. This group identified three areas for further consideration: (a) Nano/molecular composites and hierarchical structures; (b) Organic semiconductors; and (c) Hot carrier devices

Graphite-based photovoltaic cells

Science.gov (United States)

Lagally, Max; Liu, Feng

2010-12-28

The present invention uses lithographically patterned graphite stacks as the basic building elements of an efficient and economical photovoltaic cell. The basic design of the graphite-based photovoltaic cells includes a plurality of spatially separated graphite stacks, each comprising a plurality of vertically stacked, semiconducting graphene sheets (carbon nanoribbons) bridging electrically conductive contacts.

Love Wave Ultraviolet Photodetector Fabricated on a TiO2/ST-Cut Quartz Structure

Directory of Open Access Journals (Sweden)

Walter Water

2014-01-01

Full Text Available A TiO2 thin film deposited on a 90° rotated 42°45′ ST-cut quartz substrate was applied to fabricate a Love wave ultraviolet photodetector. TiO2 thin films were grown by radio frequency magnetron sputtering. The crystalline structure and surface morphology of TiO2 thin films were examined using X-ray diffraction, scanning electron microscope, and atomic force microscope. The effect of TiO2 thin film thickness on the phase velocity, electromechanical coupling coefficient, temperature coefficient of frequency, and sensitivity of ultraviolet of devices was investigated. TiO2 thin film increases the electromechanical coupling coefficient but decreases the temperature coefficient of frequency for Love wave propagation on the 90° rotated 42°45′ ST-cut quartz. For Love wave ultraviolet photodetector application, the maximum insertion loss shift and phase shift are 2.81 dB and 3.55 degree at the 1.35-μm-thick TiO2 film.

A Brief Technical History of the Large-Area Picosecond Photodetector (LAPPD) Collaboration

Energy Technology Data Exchange (ETDEWEB)

Adams, B.W.; et al.

2016-03-06

The Large Area Picosecond PhotoDetector (LAPPD) Collaboration was formed in 2009 to develop large-area photodetectors capable of time resolutions measured in pico-seconds, with accompanying sub-millimeter spatial resolution. During the next three and one-half years the Collaboration developed the LAPPD design of 20 x 20 cm modules with gains greater than $10^7$ and non-uniformity less than $15\\%$, time resolution less than 50 psec for single photons and spatial resolution of 700~microns in both lateral dimensions. We describe the R\\&D performed to develop large-area micro-channel plate glass substrates, resistive and secondary-emitting coatings, large-area bialkali photocathodes, and RF-capable hermetic packaging. In addition, the Collaboration developed the necessary electronics for large systems capable of precise timing, built up from a custom low-power 15-GigaSample/sec waveform sampling 6-channel integrated circuit and supported by a two-level modular data acquisition system based on Field-Programmable Gate Arrays for local control, data-sparcification, and triggering. We discuss the formation, organization, and technical successes and short-comings of the Collaboration. The Collaboration ended in December 2012 with a transition from R\\&D to commercialization.

Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array.

Science.gov (United States)

Han, Xun; Du, Weiming; Yu, Ruomeng; Pan, Caofeng; Wang, Zhong Lin

2015-12-22

A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Combination solar photovoltaic heat engine energy converter

Science.gov (United States)

Chubb, Donald L.

1987-01-01

A combination solar photovoltaic heat engine converter is proposed. Such a system is suitable for either terrestrial or space power applications. The combination system has a higher efficiency than either the photovoltaic array or the heat engine alone can attain. Advantages in concentrator and radiator area and receiver mass of the photovoltaic heat engine system over a heat-engine-only system are estimated. A mass and area comparison between the proposed space station organic Rankine power system and a combination PV-heat engine system is made. The critical problem for the proposed converter is the necessity for high temperature photovoltaic array operation. Estimates of the required photovoltaic temperature are presented.

A comparative study on three types of solar utilization technologies for buildings: Photovoltaic, solar thermal and hybrid photovoltaic/thermal systems

International Nuclear Information System (INIS)

Huide, Fu; Xuxin, Zhao; Lei, Ma; Tao, Zhang; Qixing, Wu; Hongyuan, Sun

2017-01-01

Highlights: • Models of Solar thermal, Photovoltaic and Photovoltaic/thermal systems are developed. • Experiments are performed to validate the simulation results. • Annual performances of the three solar systems used in china are predicted. • Energy comparison between the three solar systems is analyzed. - Abstract: Buildings need energy including heat and electricity, and both of them can be provided by the solar systems. Solar thermal and photovoltaic systems absorb the solar energy and can supply the heat and electricity for buildings, respectively. However, for the urban residential buildings, the limited available area makes installation of the solar thermal collectors and photovoltaic modules together impossible. A hybrid photovoltaic/thermal system can simultaneously generate heat and electricity, which is deemed to be quite suitable for the urban residential buildings application. And yet, for a rural house of China, the available area for installation of the solar collectors is large but daily domestic hot water demand of a rural family is generally not exceeded 300 L. If only the hybrid photovoltaic/thermal collectors are installed on the whole available area, this will lead to an overproduction of the thermal energy, especially in summer. Moreover, buildings requiring for the heat and electricity are different in different regions and different seasons. In this paper, simulation models of the solar thermal, photovoltaic and hybrid photovoltaic/thermal systems are presented, and experiments are also performed to validate the simulation results. Using the validated models, performances of the three solar systems for residential applications were predicted. And energy comparison between the three solar systems used in Hongkong, Lhasa, Shanghai and Beijing of China, respectively, were also studied. Results show that, for the urban residential building with limited available installation space, a hybrid photovoltaic/thermal system may have the

Development of a 144-channel Hybrid Avalanche Photo-Detector for Belle II ring-imaging Cherenkov counter with an aerogel radiator

Energy Technology Data Exchange (ETDEWEB)

Nishida, S., E-mail: shohei.nishida@kek.jp [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Adachi, I. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Hamada, N. [Toho University, Funabashi (Japan); Hara, K. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Iijima, T. [Nagoya University, Nagoya (Japan); Iwata, S.; Kakuno, H. [Tokyo Metropolitan University, Hachioji (Japan); Kawai, H. [Chiba University, Chiba (Japan); Korpar, S.; Krizan, P. [Jozef Stefan Institute, Ljubljana (Slovenia); Ogawa, S. [Toho University, Funabashi (Japan); Pestotnik, R.; Ŝantelj, L.; Seljak, A. [Jozef Stefan Institute, Ljubljana (Slovenia); Sumiyoshi, T. [Tokyo Metropolitan University, Hachioji (Japan); Tabata, M. [Chiba University, Chiba (Japan); Tahirovic, E. [Jozef Stefan Institute, Ljubljana (Slovenia); Yoshida, K. [Tokyo Metropolitan University, Hachioji (Japan); Yusa, Y. [Niigata University, Niigata (Japan)

2015-07-01

The Belle II detector, a follow up of the very successful Belle experiment, is under construction at the SuperKEKB electron–positron collider at KEK in Japan. For the PID system in the forward region of the spectrometer, a proximity-focusing ring-imaging Cherenkov counter with an aerogel radiator is being developed. For the position sensitive photon sensor, a 144-channel Hybrid Avalanche Photo-Detector has been developed with Hamamatsu Photonics K.K. In this report, we describe the specification of the Hybrid Avalanche Photo-Detector and the status of the mass production.

Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 ??sing an Asymmetric InA1GaAs/InGaAsP Structure

Science.gov (United States)

Vang, T. A.; Davis, L.; Keo, S.; Forouhar, S. F.

1996-01-01

Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 ??y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.

Photovoltaic energy barometer

International Nuclear Information System (INIS)

Anon

2006-01-01

The european market showed all of its strength and soundness in 2005. The 2005 installed cells growth could have been even greater if the market had not been continually curbed by a lack of raw materials. Germany remained the leading photovoltaic market in the world in 2005, positioned far ahead of Japan and the USA. This unabashed success inspired both Spain and Italy, which set up conditions in order to rapidly develop their photovoltaic sectors. (A.L.B.)

Photovoltaic policy is questioned

International Nuclear Information System (INIS)

Piro, P.; Cessac, M.

2011-01-01

The French government has decided a freeze and a reassessment of the measures taken to support the photovoltaic sector. Only the installations with a power output over 3 kWc are concerned so the market of solar roofs for homes is spared. The main reasons for this reversal is the quick and chaotic development of photovoltaic projects, a lot of projects are only motivated by the lure of high purchase prices of the electricity produced imposed by the law on EDF. Another reason is that 90% of the solar panels installed in France come from China, the photovoltaic sector retorts that 75% of the price of a complete installation pays for services produced in France. (A.C.)

Smart photodetector arrays for error control in page-oriented optical memory

Science.gov (United States)

Schaffer, Maureen Elizabeth

1998-12-01

Page-oriented optical memories (POMs) have been proposed to meet high speed, high capacity storage requirements for input/output intensive computer applications. This technology offers the capability for storage and retrieval of optical data in two-dimensional pages resulting in high throughput data rates. Since currently measured raw bit error rates for these systems fall several orders of magnitude short of industry requirements for binary data storage, powerful error control codes must be adopted. These codes must be designed to take advantage of the two-dimensional memory output. In addition, POMs require an optoelectronic interface to transfer the optical data pages to one or more electronic host systems. Conventional charge coupled device (CCD) arrays can receive optical data in parallel, but the relatively slow serial electronic output of these devices creates a system bottleneck thereby eliminating the POM advantage of high transfer rates. Also, CCD arrays are "unintelligent" interfaces in that they offer little data processing capabilities. The optical data page can be received by two-dimensional arrays of "smart" photo-detector elements that replace conventional CCD arrays. These smart photodetector arrays (SPAs) can perform fast parallel data decoding and error control, thereby providing an efficient optoelectronic interface between the memory and the electronic computer. This approach optimizes the computer memory system by combining the massive parallelism and high speed of optics with the diverse functionality, low cost, and local interconnection efficiency of electronics. In this dissertation we examine the design of smart photodetector arrays for use as the optoelectronic interface for page-oriented optical memory. We review options and technologies for SPA fabrication, develop SPA requirements, and determine SPA scalability constraints with respect to pixel complexity, electrical power dissipation, and optical power limits. Next, we examine data

Optimal sizing of utility-scale photovoltaic power generation complementarily operating with hydropower: A case study of the world’s largest hydro-photovoltaic plant

International Nuclear Information System (INIS)

Fang, Wei; Huang, Qiang; Huang, Shengzhi; Yang, Jie; Meng, Erhao; Li, Yunyun

2017-01-01

Highlights: • Feasibility of complementary hydro-photovoltaic operation across the world is revealed. • Three scenarios of the novel operation mode are proposed to satisfy different load demand. • A method for optimally sizing a utility-scale photovoltaic plant is developed by maximizing the net revenue during lifetime. • The influence of complementary hydro-photovoltaic operation upon water resources allocation is investigated. - Abstract: The high variability of solar energy makes utility-scale photovoltaic power generation confront huge challenges to penetrate into power system. In this paper, the complementary hydro-photovoltaic operation is explored, aiming at improving the power quality of photovoltaic and promoting the integration of photovoltaic into the system. First, solar-rich and hydro-rich regions across the world are revealed, which are suitable for implementing the complementary hydro-photovoltaic operation. Then, three practical scenarios of the novel operation mode are proposed for better satisfying different types of load demand. Moreover, a method for optimal sizing of a photovoltaic plant integrated into a hydropower plant is developed by maximizing the net revenue during lifetime. Longyangxia complementary hydro-photovoltaic project, the current world’s largest hydro-photovoltaic power plant, is selected as a case study and its optimal photovoltaic capacities of different scenarios are calculated. Results indicate that hydropower installed capacity and annual solar curtailment rate play crucial roles in the size optimization of a photovoltaic plant and complementary hydro-photovoltaic operation exerts little adverse effect upon the water resources allocation of Longyangxia reservoir. The novel operation mode not only improves the penetration of utility-scale photovoltaic power generation but also can provide a valuable reference for the large-scale utilization of other kinds of renewable energy worldwide.

Recent progresses and achievements in photovoltaic-phase change material technology: A review with special treatment on photovoltaic thermal-phase change material systems

International Nuclear Information System (INIS)

Islam, M.M.; Pandey, A.K.; Hasanuzzaman, M.; Rahim, N.A.

2016-01-01

Highlights: • Broad summary of phase change materials based cooling for photovoltaic modules. • Compendium on phase change materials that are mostly used in photovoltaic systems. • Extension of heat availability period by 75–100% with phase change material. • Heat storage potential improves by 33–50% more with phase change material. • Future trend and move in photovoltaic thermal research. - Abstract: This communication lays out an appraisal on the recent works of phase change materials based thermal management techniques for photovoltaic systems with special focus on the so called photovoltaic thermal-phase change material system. Attempt has also been made to draw wide-ranging classification of both photovoltaic and photovoltaic thermal systems and their conventional cooling or heat harvesting methods developed so far so that feasible phase change materials application area in these systems can be pointed out. In addition, a brief literature on phase change materials with particular focus on their solar application has also been presented. Overview of the researches and studies establish that using phase change materials for photovoltaic thermal control is technically viable if some issues like thermal conductivity or phase stability are properly addressed. The photovoltaic thermal-phase change material systems are found to offer 33% (maximum 50%) more heat storage potential than the conventional photovoltaic-thermal water system and that with 75–100% extended heat availability period and around 9% escalation in output. Reduction in temperature attained with photovoltaic thermal-phase change material system is better than that with regular photovoltaic-thermal water system, too. Studies also show the potential of another emerging technology of photovoltaic thermal-microencapsulated phase change material system that makes use of microencapsulated phase change materials in thermal regulation. Future focus areas on photovoltaic thermal-phase change

Photovoltaic Technology and Applications | Othieno | Discovery and ...

African Journals Online (AJOL)

Photovoltaic home systems appear to be the most viable alternative source of electricity. The photovoltaic technology is therefore reviewed and recommendations made on their application for rural electrification in the developing nations. Keywords: solar energy, photovoltaic materials, electrification, rural power, cost, ...

Photorefraction in crystals with nonstationary photovoltaic current

International Nuclear Information System (INIS)

Volk, T.R.; Astaf'ev, S.B.; Razumovskij, N.V.

1995-01-01

Effect of photovoltaic current nonstationary components, conditioned by nonstationary character of photovoltaic centers, on photorefractive properties of LiNbO 3 crystals is considered. Analytic expressions describing nonstationary photovoltaic current effect on kinetics of recording and optical erasure of photorefraction are obtained. A possibility of nonstationary photovoltaic current occurrence in crystals with multilevel charge transfer circuit is considered. Recording light pulse duration effect on photorefraction in LiNbO 3 is discussed. 25 refs., 8 figs

Improved performance of In0.83Ga0.17As/InP photodetectors through modifying the position of In0.66Ga0.34As/InAs superlattice electron barrier

Science.gov (United States)

Shi, Yan-hui; Zhang, Yong-gang; Ma, Ying-jie; Gu, Yi; Chen, Xing-you; Gong, Qian; Du, Ben; Zhang, Jian; Zhu, Yi

2018-03-01

The performance of wavelength extended In0.83Ga0.17As/InP photodetectors has been improved notably through modifying the position of electron barriers in absorption layer. In order to fully utilize the diffusion component of the photocurrent, the In0.66Ga0.34As/InAs superlattice electron barrier is moved to the edge of the depletion region. Enhanced peak photo responsivity up to 0.84 A/W is realized, which raises 24% compared to that of a reference detector with the superlattice barrier in the middle of the absorber. The dark current slightly increases by 25% at room temperature while decreases by more than an order of magnitude at 150 K, resulting in about 10% or more than twofold improvements for the detectivity, respectively. The results suggest that optimized barrier position is a necessity for barrier-type photodetectors to achieve better performances.

Spectrally-engineered solar thermal photovoltaic devices

Science.gov (United States)

Lenert, Andrej; Bierman, David; Chan, Walker; Celanovic, Ivan; Soljacic, Marin; Wang, Evelyn N.; Nam, Young Suk; McEnaney, Kenneth; Kraemer, Daniel; Chen, Gang

2018-03-27

A solar thermal photovoltaic device, and method of forming same, includes a solar absorber and a spectrally selective emitter formed on either side of a thermally conductive substrate. The solar absorber is configured to absorb incident solar radiation. The solar absorber and the spectrally selective emitter are configured with an optimized emitter-to-absorber area ratio. The solar thermal photovoltaic device also includes a photovoltaic cell in thermal communication with the spectrally selective emitter. The spectrally selective emitter is configured to permit high emittance for energies above a bandgap of the photovoltaic cell and configured to permit low emittance for energies below the bandgap.

Standard Test Methods for Measurement of Electrical Performance and Spectral Response of Nonconcentrator Multijunction Photovoltaic Cells and Modules

CERN Document Server

American Society for Testing and Materials. Philadelphia

2010-01-01

1.1 These test methods provide special techniques needed to determine the electrical performance and spectral response of two-terminal, multijunction photovoltaic (PV) devices, both cell and modules. 1.2 These test methods are modifications and extensions of the procedures for single-junction devices defined by Test Methods E948, E1021, and E1036. 1.3 These test methods do not include temperature and irradiance corrections for spectral response and current-voltage (I-V) measurements. Procedures for such corrections are available in Test Methods E948, E1021, and E1036. 1.4 These test methods may be applied to cells and modules intended for concentrator applications. 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and ...

Energizing architecture. Design and photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Lueling, Claudia (ed.)

2009-07-01

Power generation by photovoltaic systems and buildings is much more than just an alternative to traditional electric power generation. As the planning and design of photovoltaics is increasingly shifting to the forefront, it is rapidly becoming a new challenge for architecture. This book describes the whole spectrum of possible applications - from inspiration to detail - of photovoltaics as an integral part of building envelopes and introduces groundbreaking examples and visions for the future, in which photovoltaic elements work as a successful part of exterior facades - combined with highly luminous and economical illuminated wallpaper and curtains inside buildings. Its range extends from early designs by artists such as Daniel Hausig to aspects of material selection to detail drawings of implemented solutions. The enormous variety of possible applications of this new (building) material demonstrates the huge potential it possesses. (orig.)

A sensitivity analysis of central flat-plate photovoltaic systems and implications for national photovoltaics program planning

Science.gov (United States)

Crosetti, M. R.

1985-01-01

The sensitivity of the National Photovoltaic Research Program goals to changes in individual photovoltaic system parameters is explored. Using the relationship between lifetime cost and system performance parameters, tests were made to see how overall photovoltaic system energy costs are affected by changes in the goals set for module cost and efficiency, system component costs and efficiencies, operation and maintenance costs, and indirect costs. The results are presented in tables and figures for easy reference.

Overview of new-generation photovoltaic technologies

International Nuclear Information System (INIS)

Della Sala, D.; Moro, A.; Fidanza, A.; Di Francia, G.; Giorgi, R.

2008-01-01

The number of photovoltaic installation is rising in Italy, but they are all based on imported technologies. This article describes some new types of photovoltaic cells that benefit from powerful synergies with other sectors. ENEA can help speed their development by exploiting its long experience with photovoltaic and the growing body of know-how on the new frontiers of electronics and new materials [it

Optimization of photovoltaic power systems

CERN Document Server

Rekioua, Djamila

2012-01-01

Photovoltaic generation is one of the cleanest forms of energy conversion available. One of the advantages offered by solar energy is its potential to provide sustainable electricity in areas not served by the conventional power grid. Optimisation of Photovoltaic Power Systems details explicit modelling, control and optimisation of the most popular stand-alone applications such as pumping, power supply, and desalination. Each section is concluded by an example using the MATLAB(R) and Simulink(R) packages to help the reader understand and evaluate the performance of different photovoltaic syste

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

Trends of Photovoltaic Research, Development and Diffusion

Energy Technology Data Exchange (ETDEWEB)

Song, J. S.; Yoon, K. H.; Yu, K. J. [Korea Institute of Energy Research (Korea)

2000-07-01

The Korean National Photovoltaic Project was initiated on October 1989 to develop technologies for the generation of economically competitive electric power by photovoltaic systems. It consists of four stages through the year 2006 with technical goals and cost targets related with solar cells, balance of systems and system application. The objectives of the project are to utilize photovoltaic technology, to transfer developed technology to industries and end users by research activities and to diffuse photovoltaic systems by demonstration projects. This paper reviews long-term plan and status of technology R and D, and markets of photovoltaic. Some activities designed to promote collaboration with foreign countries are also introduced. (author). 14 refs., 3 figs., 3 tabs.

Home Photovoltaic System Design in Pangkalpinang City

Science.gov (United States)

Sunanda, Wahri

2018-02-01

This research aims to obtain the design of home photovoltaic systems in Pangkalpinang and the opportunity of economic savings. The system consists of photovoltaic with batteries. Based on electricity consumption of several houses with installed power of 1300 VA and 2200 VA in Pangkalpinang for one year, the daily load of photovoltaic system is varied to 40%, 30% and 20% of the average value of the daily home electricity consumption. The investment costs, the cost of replacement parts and the cost of electricity consumption accrued to PLN during lifetime of systems (25 years) are also calculated. The result provided that there are no economic saving opportunities for photovoltaic systems with batteries at home with installed power of 1300 VA and 2200 VA in Pangkalpinang. The most economical is the photovoltaic system with the daily load of 20% of the average value of the daily home electricity consumption. The configuration of photovoltaic system for 1300 VA home consists of 10 modules of 200 wattpeak and 4 batteries 150 AH, 12 Volt while photovoltaic system for 2200 VA home consists of 15 modules of 200 wattpeak and 6 batteries 150 AH,12Volt.

An improved PIN photodetector with integrated JFET on high-resistivity silicon

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

2006-01-01

We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

Design of a photodetector unit of a new Shashlyk EM calorimeter for COMPASS II

International Nuclear Information System (INIS)

Chirikov-Zorin, I.; Krumshtein, Z.; Olchevski, A.

2015-01-01

A nine-channel photodetector unit with micropixel avalanche photodiodes (MAPD) and precision thermostabilization based on the compact Peltier module was designed and constructed. MAPD-3N with a high pixel density of 1.5·10 4 mm -2 and area 3x3 mm produced by Zecotek were used.

Modeling and simulation of a 3D-CMOS silicon photodetector for low-intensity light detection

Science.gov (United States)

Sabri Alirezaei, Iman; Burte, Edmund P.

2016-03-01

This paper presents a design and simulation of a novel high performance 3D-silicon photodetector for implementing in the low intensity light detection at room temperature (300K). The photodetector is modeled by inspiration of general MEMS fabrication to make a 3D- structure in the silicon substrate using a bulk micromachining process, and based on a complementary metal-oxide semiconductor (CMOS) technology. The design includes a vertical n+/p junction as an optical window for lateral illumination. The simulation is carried out using COMSOL Multiphysics relying on theoretical and physical concepts, and then, the assessment of the results is done by the numerical analysis with SILVACO (Atlas) device simulator. Light is regarded as a monochromatic beam with a wavelength of 633nm that is placed 1μm far from the optical window. The simulation is considered under the reverse bias dc voltage in the steadystate. We present photocurrent-voltage (Iph-V) characteristics under different light intensities (2… 10[mW/cm2]), and dark current-voltage (Id-V) characteristics. Comparative studies of sensitivity dependence on the dopant concentration in the substrate as an intrinsic region are accomplished utilizing two different p-type silicon substrates with 1×1015 [1/cm3] and 4×1012 [1/cm3] doping concentration. Moreover, the sensitivity is evaluated with respect to the active substrate thickness. The simulated results confirmed that the high optical sensitivity of the photodetector with low dark current can be realized in this model.

International photovoltaic products and manufacturers directory, 1995

Energy Technology Data Exchange (ETDEWEB)

Shepperd, L.W. [ed.] [Florida Solar Energy Center, Cocoa, FL (United States)

1995-11-01

This international directory of more than 500 photovoltaic-related manufacturers is intended to guide potential users of photovoltaics to sources for systems and their components. Two indexes help the user to locate firms and materials. A glossary describes equipment and terminology commonly used in the photovoltaic industry.

Neuro-Fuzzy Wavelet Based Adaptive MPPT Algorithm for Photovoltaic Systems

Directory of Open Access Journals (Sweden)

Syed Zulqadar Hassan

2017-03-01

Full Text Available An intelligent control of photovoltaics is necessary to ensure fast response and high efficiency under different weather conditions. This is often arduous to accomplish using traditional linear controllers, as photovoltaic systems are nonlinear and contain several uncertainties. Based on the analysis of the existing literature of Maximum Power Point Tracking (MPPT techniques, a high performance neuro-fuzzy indirect wavelet-based adaptive MPPT control is developed in this work. The proposed controller combines the reasoning capability of fuzzy logic, the learning capability of neural networks and the localization properties of wavelets. In the proposed system, the Hermite Wavelet-embedded Neural Fuzzy (HWNF-based gradient estimator is adopted to estimate the gradient term and makes the controller indirect. The performance of the proposed controller is compared with different conventional and intelligent MPPT control techniques. MATLAB results show the superiority over other existing techniques in terms of fast response, power quality and efficiency.

Photovoltaic energy in Germany: experience feedback

International Nuclear Information System (INIS)

Persem, Melanie

2011-01-01

This document presents some key information and figures about the development of photovoltaic energy in Germany: resource potential, 2000-2010 development, share in the energy mix, market, legal framework and incentives, market evolution and electricity feed-in tariffs, 2006-2011 evolution of photovoltaic power plant costs, households' contribution, R and D investments, industry development and employment, the German national energy plan after Fukushima, the expectations of the German photovoltaic industry

PV Status Report 2009. Research, Solar Cell Production and Market Implementation of Photovoltaics