Near-Saturation Single-Photon Avalanche Diode Afterpulse and Sensitivity Correction Scheme for the LHC Longitudinal density Monitor

CERN Document Server

Bravin, E; Palm, M

2014-01-01

Single-Photon Avalanche Diodes (SPADs) monitor the longitudinal density of the LHC beams by measuring the temporal distribution of synchrotron radiation. The relative population of nominally empty RF-buckets (satellites or ghosts) with respect to filled bunches is a key figure for the luminosity calibration of the LHC experiments. Since afterpulsing from a main bunch avalanche can be as high as, or higher than, the signal from satellites or ghosts, an accurate correction algorithm is needed. Furthermore, to reduce the integration time, the amount of light sent to the SPAD is enough so that pile-up effects and afterpulsing cannot be neglected. The SPAD sensitivity has also been found to vary at the end of the active quenching phase. We present a method to characterize and correct for SPAD deadtime, afterpulsing and sensitivity variation near saturation, together with laboratory benchmarking.

Performance Analysis of Single Photon Avalanche Diode Underwater VLC System Using ARQ

KAUST Repository

Shafiqu, Taniya

2017-08-24

Single photon avalanche diode (SPAD) has recently been introduced as a powerful detector for long distance underwater visible light (UVLC) communication. In this paper, the performance of the SPAD detector in UVLC is analyzed considering the effect of the turbulence induced fading resulting from air bubbles in addition to the combined effect of attenuation and scattering. Automatic repeat request (ARQ) system is adopted to mitigate different underwater impairments and reduce the error probability at the receiver side. Approximate packet error rate (PER) expressions are derived using Laguerre Gauss polynomial for a finite number of transmission. Next, the average energy efficiency and throughput are analyzed to account for the increased energy consumption cost and the decreased effective transmission rate, which results from adopting the ARQ scheme. Finally, different numerical results are introduced to verify the derived PER expressions, demonstrate the ability of the proposed ARQ system in extending the transmission range, and show the trade-off between energy efficiency (EE) and throughput.

Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

International Nuclear Information System (INIS)

Verkhovtseva, A. V.; Gergel, V. A.

2009-01-01

Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems

Directory of Open Access Journals (Sweden)

Isamu Takai

2016-03-01

Full Text Available A single-photon avalanche diode (SPAD with enhanced near-infrared (NIR sensitivity has been developed, based on 0.18 μm CMOS technology, for use in future automotive light detection and ranging (LIDAR systems. The newly proposed SPAD operating in Geiger mode achieves a high NIR photon detection efficiency (PDE without compromising the fill factor (FF and a low breakdown voltage of approximately 20.5 V. These properties are obtained by employing two custom layers that are designed to provide a full-depletion layer with a high electric field profile. Experimental evaluation of the proposed SPAD reveals an FF of 33.1% and a PDE of 19.4% at 870 nm, which is the laser wavelength of our LIDAR system. The dark count rate (DCR measurements shows that DCR levels of the proposed SPAD have a small effect on the ranging performance, even if the worst DCR (12.7 kcps SPAD among the test samples is used. Furthermore, with an eye toward vehicle installations, the DCR is measured over a wide temperature range of 25–132 °C. The ranging experiment demonstrates that target distances are successfully measured in the distance range of 50–180 cm.

The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

International Nuclear Information System (INIS)

Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

2013-01-01

In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined. (letter)

Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution.

Science.gov (United States)

Ma, Jian; Bai, Bing; Wang, Liu-Jun; Tong, Cun-Zhu; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2016-09-20

InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization. The parameters of photon detection efficiency and dark count rate highly depend on the variables of absorption layer thickness, multiplication layer thickness, excess bias voltage, and temperature. By evaluating the decoy-state QKD performance, the variables for SPAD design and operation can be globally optimized. Such optimization from the perspective of specific applications can provide an effective approach to design high-performance InGaAs/InP SPADs.

Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors.

Science.gov (United States)

Ziarkash, Abdul Waris; Joshi, Siddarth Koduru; Stipčević, Mario; Ursin, Rupert

2018-03-22

Single-photon avalanche diode (SPAD) detectors, have a great importance in fields like quantum key distribution, laser ranging, florescence microscopy, etc. Afterpulsing is a non-ideal behavior of SPADs that adversely affects any application that measures the number or timing of detection events. Several studies based on a few individual detectors, derived distinct mathematical models from semiconductor physics perspectives. With a consistent testing procedure and statistically large data sets, we show that different individual detectors - even if identical in type, make, brand, etc. - behave according to fundamentally different mathematical models. Thus, every detector must be characterized individually and it is wrong to draw universal conclusions about the physical meaning behind these models. We also report the presence of high-order afterpulses that are not accounted for in any of the standard models.

Gun muzzle flash detection using a CMOS single photon avalanche diode

Science.gov (United States)

Merhav, Tomer; Savuskan, Vitali; Nemirovsky, Yael

2013-10-01

Si based sensors, in particular CMOS Image sensors, have revolutionized low cost imaging systems but to date have hardly been considered as possible candidates for gun muzzle flash detection, due to performance limitations, and low SNR in the visible spectrum. In this study, a CMOS Single Photon Avalanche Diode (SPAD) module is used to record and sample muzzle flash events in the visible spectrum, from representative weapons, common on the modern battlefield. SPADs possess two crucial properties for muzzle flash imaging - Namely, very high photon detection sensitivity, coupled with a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. This enables high sampling frequencies in the kilohertz range without SNR degradation, in contrast to regular CMOS image sensors. To date, the SPAD has not been utilized for flash detection in an uncontrolled environment, such as gun muzzle flash detection. Gun propellant manufacturers use alkali salts to suppress secondary flashes ignited during the muzzle flash event. Common alkali salts are compounds based on Potassium or Sodium, with spectral emission lines around 769nm and 589nm, respectively. A narrow band filter around the Potassium emission doublet is used in this study to favor the muzzle flash signal over solar radiation. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength under the specified imaging conditions. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics.

Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

Science.gov (United States)

Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2017-07-10

We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

Science.gov (United States)

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

Radiation Tests of Single Photon Avalanche Diode for Space Applications

Science.gov (United States)

Moscatelli, Francesco; Marisaldi, Martino; MacCagnani, Piera; Labanti, Claudio; Fuschino, Fabio; Prest, Michela; Berra, Alessandro; Bolognini, Davide; Ghioni, Massimo; Rech, Ivan;

Gun muzzle flash detection using a single photon avalanche diode array in 0.18µm CMOS technology

Science.gov (United States)

Savuskan, Vitali; Jakobson, Claudio; Merhav, Tomer; Shoham, Avi; Brouk, Igor; Nemirovsky, Yael

2015-05-01

In this study, a CMOS Single Photon Avalanche Diode (SPAD) 2D array is used to record and sample muzzle flash events in the visible spectrum, from representative weapons. SPADs detect the emission peaks of alkali salts, potassium or sodium, with spectral emission lines around 769nm and 589nm, respectively. The alkali salts are included in the gunpowder to suppress secondary flashes ignited during the muzzle flash event. The SPADs possess two crucial properties for muzzle flash imaging: (i) very high photon detection sensitivity, (ii) a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. The sole noise sources are the ones prior to the readout circuitry (optical signal distribution, avalanche initiation distribution and nonphotonic generation). This enables high sampling frequencies in the kilohertz range without significant SNR degradation, in contrast to regular CMOS image sensors. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength, in the presence of sunlight. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics and signal processing, which will be reported. The frame rate of ~16 KHz was chosen as an optimum between SNR degradation and temporal profile recognition accuracy. In contrast to a single SPAD, the 2D array allows for multiple events to be processed simultaneously. Moreover, a significant field of view is covered, enabling comprehensive surveillance and imaging.

2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

Science.gov (United States)

Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

2018-02-01

PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.

Highly efficient router-based readout algorithm for single-photon-avalanche-diode imagers for time-correlated experiments

Science.gov (United States)

Cominelli, A.; Acconcia, G.; Caldi, F.; Peronio, P.; Ghioni, M.; Rech, I.

2018-02-01

Time-Correlated Single Photon Counting (TCSPC) is a powerful tool that permits to record extremely fast optical signals with a precision down to few picoseconds. On the other hand, it is recognized as a relatively slow technique, especially when a large time-resolved image is acquired exploiting a single acquisition channel and a scanning system. During the last years, much effort has been made towards the parallelization of many acquisition and conversion chains. In particular, the exploitation of Single-Photon Avalanche Diodes in standard CMOS technology has paved the way to the integration of thousands of independent channels on the same chip. Unfortunately, the presence of a large number of detectors can give rise to a huge rate of events, which can easily lead to the saturation of the transfer rate toward the elaboration unit. As a result, a smart readout approach is needed to guarantee an efficient exploitation of the limited transfer bandwidth. We recently introduced a novel readout architecture, aimed at maximizing the counting efficiency of the system in typical TCSPC measurements. It features a limited number of high-performance converters, which are shared with a much larger array, while a smart routing logic provides a dynamic multiplexing between the two parts. Here we propose a novel routing algorithm, which exploits standard digital gates distributed among a large 32x32 array to ensure a dynamic connection between detectors and external time-measurement circuits.

Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

Energy Technology Data Exchange (ETDEWEB)

Di Sieno, Laura, E-mail: laura.disieno@polimi.it; Dalla Mora, Alberto; Contini, Davide [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Wabnitz, Heidrun; Macdonald, Rainer [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Pifferi, Antonio [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Mazurenka, Mikhail [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Hannoversches Zentrum für Optische Technologien, Nienburger Str. 17, 30167 Hannover (Germany); Hoshi, Yoko [Department of Biomedical Optics, Medical Photonics Research Center, Hamamatsu University School of Medicine, Hamamatsu 431-3192 (Japan); Boso, Gianluca; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Becker, Wolfgang [Becker and Hickl GmbH, Nahmitzer Damm 30, 12277 Berlin (Germany); Martelli, Fabrizio [Dipartimento di Fisica e Astronomia dell’Università degli Studi di Firenze, Via G. Sansone 1, Sesto Fiorentino, Firenze 50019 (Italy)

2016-03-15

We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

International Nuclear Information System (INIS)

Di Sieno, Laura; Dalla Mora, Alberto; Contini, Davide; Wabnitz, Heidrun; Macdonald, Rainer; Pifferi, Antonio; Mazurenka, Mikhail; Hoshi, Yoko; Boso, Gianluca; Tosi, Alberto; Becker, Wolfgang; Martelli, Fabrizio

2016-01-01

We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

Science.gov (United States)

Huntington, Andrew

2013-01-01

The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

Few-photon optical diode

OpenAIRE

Roy, Dibyendu

2010-01-01

We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

Avalanche diode having reduced dark current and method for its manufacture

Science.gov (United States)

Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

2017-08-29

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

A new avalanche photo diode based readout for the crystal barrel calorimeter

Energy Technology Data Exchange (ETDEWEB)

Urban, Martin [Helmholtz-Institut fuer Strahlen- und Kernphysik, Nussallee 14-16, 53115 Bonn (Germany); Collaboration: CBELSA/TAPS-Collaboration

2015-07-01

The CBELSA/TAPS experiment at ELSA has proven successful in the measurement of double polarization observables in meson photoproduction off protons and neutrons. To be able to measure purely neutral reactions on a polarized neutron target with high efficiency, the main calorimeter consisting of 1320 CsI(Tl) crystals has to be integrated into the first level trigger. Key requirement to achieve this goal is an exchange of the existing PIN photo diode by a new avalanche photo diode (APD) readout. The main advantage of the new readout system is that it will provide timing information which allows a fast trigger signal. The energy resolution will remain compatible to the previous system. Besides the development of automated test routines for the front end electronics, the characterization of all APDs was successfully accomplished in Bonn. After tests with a 3 x 3 CsI(Tl) crystal matrix at the tagged photon beam facilities at ELSA and MAMI the first half of the Crystal Barrel was upgraded in 2014. This talk shows the result of the latest test measurements including the gain stabilization of the new APD readout electronics and presents the progress of the ongoing upgrade.

Long-wavelength photonic integrated circuits and avalanche photodetectors

Science.gov (United States)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

Response of CMS avalanche photo-diodes to low energy neutrons

Science.gov (United States)

Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

2012-12-01

The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

Science.gov (United States)

Thomas, O; Yuan, Z L; Shields, A J

2012-01-24

Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

Science.gov (United States)

Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

2008-01-01

An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

Athermal avalanche in bilayer superconducting nanowire single-photon detectors

Energy Technology Data Exchange (ETDEWEB)

Verma, V. B., E-mail: verma@nist.gov; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

2016-03-28

We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

International Nuclear Information System (INIS)

Liu Fei; Yang Sen; Zhou Dong; Lu Hai; Zhang Rong; Zheng You-Dou

2015-01-01

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed. (paper)

A method to quench and recharge avalanche photo diodes for use in high rate situations

International Nuclear Information System (INIS)

Regan, T.O.; Fenker, H.C.; Thomas, J.; Oliver, J.

1992-06-01

We present a new method of using Avalanche Photo Diodes (APDS) for low level light detection in Geiger mode in high rate situations such as those encountered at the Superconducting Super Collider (SSC). The new technique is readily adaptable to implementation in CMOS VLSI

Hole-Initiated-Avalanche, Linear-Mode, Single-Photon-Sensitive Avalanche Photodetector with Reduced Excess Noise and Low Dark Count Rate, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A radiation hard, single photon sensitive InGaAs avalanche photodiode (APD) receiver technology will be demonstrated useful for long range space based optical...

Photon-counting monolithic avalanche photodiode arrays for the super collider

International Nuclear Information System (INIS)

Ishaque, A.N.; Castleberry, D.E.; Rougeot, H.M.

1994-01-01

In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

TH-CD-207B-07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

Energy Technology Data Exchange (ETDEWEB)

Cheng, Z; Zheng, X; Deen, J; Peng, H [McMaster University, Hamilton, ON (Canada); Xing, L [Stanford University School of Medicine, Stanford, CA (United States)

2016-06-15

Purpose: Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors. Methods: The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p-well junction, which is isolated from the p-substrate by a deep n-well junction. Inter-avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap. Results: At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after-pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after-pulsing probability is 63.5% at - 30 °C and drops to ∼6.6% at 40 °C. Conclusion: A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band-to-band tunneling dark noise contribution and temporal dependence of the after-pulsing probability.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Evaluation of a fast single-photon avalanche photodiode for measurement of early transmitted photons through diffusive media.

Science.gov (United States)

Mu, Ying; Valim, Niksa; Niedre, Mark

2013-06-15

We tested the performance of a fast single-photon avalanche photodiode (SPAD) in measurement of early transmitted photons through diffusive media. In combination with a femtosecond titanium:sapphire laser, the overall instrument temporal response time was 59 ps. Using two experimental models, we showed that the SPAD allowed measurement of photon-density sensitivity functions that were approximately 65% narrower than the ungated continuous wave case at very early times. This exceeds the performance that we have previously achieved with photomultiplier-tube-based systems and approaches the theoretical maximum predicted by time-resolved Monte Carlo simulations.

Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise

Science.gov (United States)

Zhao, Kai; Lo, YuHwa; Farr, William

2010-01-01

This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 me

Photon response of silicon diode neutron detectors

International Nuclear Information System (INIS)

McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

1976-07-01

The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Spin-photon entangling diode

DEFF Research Database (Denmark)

Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

2007-01-01

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

Science.gov (United States)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

Science.gov (United States)

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

Gallium-based avalanche photodiode optical crosstalk

International Nuclear Information System (INIS)

Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

2006-01-01

Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time

Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

Energy Technology Data Exchange (ETDEWEB)

Britvitch, I. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland)]. E-mail: Ilia.britvitch@psi.ch; Johnson, I. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Renker, D. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stoykov, A. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Lorenz, E. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland); Max Planck Institute for Physics, 80805 Munich (Germany)

2007-02-01

Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

International Nuclear Information System (INIS)

Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

2007-01-01

Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate

Photon-HDF5: An Open File Format for Timestamp-Based Single-Molecule Fluorescence Experiments

OpenAIRE

Ingargiola, Antonino; Laurence, Ted; Boutelle, Robert; Weiss, Shimon; Michalet, Xavier

2016-01-01

We introduce Photon-HDF5, an open and efficient file format to simplify exchange and long-term accessibility of data from single-molecule fluorescence experiments based on photon-counting detectors such as single-photon avalanche diode, photomultiplier tube, or arrays of such detectors. The format is based on HDF5, a widely used platform- and language-independent hierarchical file format for which user-friendly viewers are available. Photon-HDF5 can store raw photon data (timestamp, channel n...

Study on photon sensitivity of silicon diodes related to materials used for shielding

International Nuclear Information System (INIS)

Moiseev, T.

1999-01-01

Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

International Nuclear Information System (INIS)

Moiseev, T.

2000-01-01

Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

International Nuclear Information System (INIS)

Loudon, A.Y.

2002-01-01

Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

Performance of EPI diodes as dosimeters for photon beam radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Santos, Thais C. dos; Bizetto, Cesar A., E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Neves-Junior, Wellington F.P.; Haddad, Cecilia M.K. [Hospital Sirio Libanes (HSL), Sao Paulo, SP (Brazil); Goncalves, Josemary A.C.; Bueno, Carmen C. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Pontificia Universidade Catolica de Sao Paulo (PUC-SP), SP (Brazil)

2011-07-01

In this work we present the preliminary results about the performance of an epitaxial (EPI) diode as on-line dosimeter for photon beam radiotherapy. The diode used was processed at University of Hamburg on n-type 75 {mu}m thick epitaxial silicon layer grown on a highly doped n-type 300 {mu}m thick Czochralski (Cz) silicon substrate. The measurements were performed with a diode which not received any type of pre-dose. In order to use this device as a dosimeter, it was enclosed in a black polymethylmethacrylate (PMMA) probe. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. During all measurements, the diode was held between PMMA plates, placed at 10.0 cm depth and centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. The short-term repeatability was measured with photon beams of 6 and 18 MV energy by registering five consecutive current signals for the same radiation dose. The current signals induced showed good instantaneous repeatability of the diode, characterized by a smallest coefficient of variation (CV) of 0.21%. Furthermore, the dose-response curves of the diode were quite linear with the highest charge sensitivity achieved of 5.0 {mu}C/Gy. It worth noting that still remains to be investigated the pre-dose influence on epitaxial silicon diode response in radiotherapy photon beam dosimetry, the long term stability and the radiation hardness of these diodes for absorbed doses higher than that investigated in this work. All these studies are under way. (author)

Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

Science.gov (United States)

Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

2015-01-01

An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

Site-controlled InGaN/GaN single-photon-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Intrinsic Bistability and Critical Slowing in Tm3+/Yb3+ Codoped Laser Crystal with the Photon Avalanche Mechanism

International Nuclear Information System (INIS)

Li, Li; Li-Xue, Chen; Xin-Lu, Zhang

2009-01-01

We present theoretically a novel intrinsic optical bistability (IOB) in the Tm 3+ /Yb 3+ codoped system with a photon avalanche mechanism. Numerical simulations based on the rate equation model demonstrate distinct IOB hysteresis and critical slowing dynamics around the avalanche thresholds. Such an IOB characteristic in Tm 3+ /Yb 3+ codoped crystal has potential applications in solid-state bistable optical displays and luminescence switchers in visible-infrared spectra. (fundamental areas of phenomenology (including applications))

High-efficiency dynamic routing architecture for the readout of single photon avalanche diode arrays in time-correlated measurements

Science.gov (United States)

Cominelli, A.; Acconcia, G.; Peronio, P.; Rech, I.; Ghioni, M.

2017-05-01

In recent years, the Time-Correlated Single Photon Counting (TCSPC) technique has gained a prominent role in many fields, where the analysis of extremely fast and faint luminous signals is required. In the life science, for instance, the estimation of fluorescence time-constants with picosecond accuracy has been leading to a deeper insight into many biological processes. Although the many advantages provided by TCSPC-based techniques, their intrinsically repetitive nature leads to a relatively long acquisition time, especially when time-resolved images are obtained by means of a single detector, along with a scanning point system. In the last decade, TCSPC acquisition systems have been subjected to a fast trend towards the parallelization of many independent channels, in order to speed up the measure. On one hand, some high-performance multi-module systems have been already made commercially available, but high area and power consumption of each module have limited the number of channels to only some units. On the other hand, many compact systems based on Single Photon Avalanche Diodes (SPAD) have been proposed in literature, featuring thousands of independent acquisition chains on a single chip. The integration of both detectors and conversion electronic in the same pixel area, though, has imposed tight constraints on power dissipation and area occupation of the electronics, resulting in a tradeoff with performance, both in terms of differential nonlinearity and timing jitter. Furthermore, in the ideal case of simultaneous readout of a huge number of channels, the overall data rate can be as high as 100 Gbit/s, which is nowadays too high to be easily processed in real time by a PC. Typical adopted solutions involve an arbitrary dwell time, followed by a sequential readout of the converters, thus limiting the maximum operating frequency of each channel and impairing the measurement speed, which still lies well below the limit imposed by the saturation of the

High-brightness tapered laser diodes with photonic crystal structures

Science.gov (United States)

Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

2018-02-01

Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

Application of spherical diodes for megavoltage photon beams dosimetry.

Science.gov (United States)

Barbés, Benigno; Azcona, Juan D; Burguete, Javier; Martí-Climent, Josep M

2014-01-01

External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to perform in vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm(2) and 20 × 20 cm(2)) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (± 0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. The measurements of relative dose using the spherical diode described in this

Application of spherical diodes for megavoltage photon beams dosimetry

International Nuclear Information System (INIS)

Barbés, Benigno; Azcona, Juan D.; Burguete, Javier; Martí-Climent, Josep M.

2014-01-01

Purpose: External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to performin vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. Methods: The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm 2 and 20 × 20 cm 2 ) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. Results: The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (±0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. Conclusions: The measurements of relative dose using

Novel Photon-Counting Detectors for Free-Space Communication

Science.gov (United States)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Advances in gas avalanche photomultipliers

CERN Document Server

Breskin, Amos; Buzulutskov, A F; Chechik, R; Garty, E; Shefer, G; Singh, B K

2000-01-01

Gas avalanche detectors, combining solid photocathodes with fast electron multipliers, provide an attractive solution for photon localization over very large sensitive areas and under high illumination flux. They offer single-photon sensitivity and the possibility of operation under very intense magnetic fields. We discuss the principal factors governing the operation of gas avalanche photomultipliers. We summarize the recent progress made in alkali-halide and CVD-diamond UV-photocathodes, capable of operation under gas multiplication, and novel thin-film protected alkali-antimonide photocathodes, providing, for the first time, the possibility of operating gas photomultipliers in the visible range. Electron multipliers, adequate for these photon detectors, are proposed and some applications are briefly discussed.

Waveguide photonic crystals with characteristics controlled with p-i-n diodes

International Nuclear Information System (INIS)

Usanov, D. A.; Skripal, A. V.; Abramov, A. V.; Bogolyubov, A. S.; Skvortsov, V. S.; Merdanov, M. K.

2010-01-01

A one-dimensional waveguide photonic structure-specifically, a photonic crystal with a controllable frequency characteristic-is designed. The central frequency of the spectral window of the photonic crystal can be tuned by choosing the parameters of disturbance of periodicity in the photonic crystal, whereas the transmission coefficient at a particular frequency can be controlled by varying the voltage at a p-i-n diode. It is shown that the possibility exists of using the waveguide photonic crystal to design a microwave device operating in the 3-cm-wavelength region, with a transmission band of 70 MHz at a level 3 dB and the transmission coefficient controllable in the range from -1.5 to -25 dB under variations in the forward voltage bias at the p-i-n diode from zero to 700 mV.

Use of epitaxial silicon diodes in photon dosimetry

International Nuclear Information System (INIS)

Pereira, Lilian Nunes

2013-01-01

In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

Photon-Counting Arrays for Time-Resolved Imaging

Directory of Open Access Journals (Sweden)

I. Michel Antolovic

2016-06-01

Full Text Available The paper presents a camera comprising 512 × 128 pixels capable of single-photon detection and gating with a maximum frame rate of 156 kfps. The photon capture is performed through a gated single-photon avalanche diode that generates a digital pulse upon photon detection and through a digital one-bit counter. Gray levels are obtained through multiple counting and accumulation, while time-resolved imaging is achieved through a 4-ns gating window controlled with subnanosecond accuracy by a field-programmable gate array. The sensor, which is equipped with microlenses to enhance its effective fill factor, was electro-optically characterized in terms of sensitivity and uniformity. Several examples of capture of fast events are shown to demonstrate the suitability of the approach.

New bi-dimensional SPAD arrays for time resolved single photon imaging

Energy Technology Data Exchange (ETDEWEB)

Grasso, R. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Centro Siciliano di Fisica Nucleare e Struttura della Materia, Viale A. Doria 6, 95125 Catania (Italy); Tudisco, S., E-mail: tudisco@lns.infn.it [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Centro Siciliano di Fisica Nucleare e Struttura della Materia, Viale A. Doria 6, 95125 Catania (Italy); Piemonte, C. [FBK-Fondazione Bruno Kessler, Via S. Croce 77, 38122 Trento (Italy); Lo Presti, D. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Anzalone, A. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Musumeci, F.; Scordino, A. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Serra, N.; Zorzi, N. [FBK-Fondazione Bruno Kessler, Via S. Croce 77, 38122 Trento (Italy)

2013-08-01

Some of the first results concerning the electrical and optical performances of new bi-dimensional single photon avalanche diodes arrays for imaging applications are briefly presented. The planned arrays were realized at the Fondazione Bruno Kessler—Trento and tested at LNS–INFN. The proposed new solution, utilizing a new architecture with integrated quenching resistors, allows to simplify the electronic readout.

New bi-dimensional SPAD arrays for time resolved single photon imaging

International Nuclear Information System (INIS)

Grasso, R.; Tudisco, S.; Piemonte, C.; Lo Presti, D.; Anzalone, A.; Musumeci, F.; Scordino, A.; Serra, N.; Zorzi, N.

2013-01-01

Some of the first results concerning the electrical and optical performances of new bi-dimensional single photon avalanche diodes arrays for imaging applications are briefly presented. The planned arrays were realized at the Fondazione Bruno Kessler—Trento and tested at LNS–INFN. The proposed new solution, utilizing a new architecture with integrated quenching resistors, allows to simplify the electronic readout

Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy

International Nuclear Information System (INIS)

Bizetto, Cesar Augusto

2013-01-01

In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley® 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus® linear accelerator), 6 and 15 MV (Novalis TX®) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX® the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm 2 , with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

Modeling silicon diode energy response factors for use in therapeutic photon beams.

Science.gov (United States)

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Modeling silicon diode energy response factors for use in therapeutic photon beams

International Nuclear Information System (INIS)

Eklund, Karin; Ahnesjoe, Anders

2009-01-01

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm 2 , 10 x 10 cm 2 and 20 x 20 cm 2 fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Fully Integrated Linear Single Photon Avalanche Diode (SPAD) Array with Parallel Readout Circuit in a Standard 180 nm CMOS Process

Science.gov (United States)

Isaak, S.; Bull, S.; Pitter, M. C.; Harrison, Ian.

2011-05-01

This paper reports on the development of a SPAD device and its subsequent use in an actively quenched single photon counting imaging system, and was fabricated in a UMC 0.18 μm CMOS process. A low-doped p- guard ring (t-well layer) encircling the active area to prevent the premature reverse breakdown. The array is a 16×1 parallel output SPAD array, which comprises of an active quenched SPAD circuit in each pixel with the current value being set by an external resistor RRef = 300 kΩ. The SPAD I-V response, ID was found to slowly increase until VBD was reached at excess bias voltage, Ve = 11.03 V, and then rapidly increase due to avalanche multiplication. Digital circuitry to control the SPAD array and perform the necessary data processing was designed in VHDL and implemented on a FPGA chip. At room temperature, the dark count was found to be approximately 13 KHz for most of the 16 SPAD pixels and the dead time was estimated to be 40 ns.

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams

International Nuclear Information System (INIS)

Griessbach, Irmgard; Lapp, Markus; Bohsung, Joerg; Gademann, Guenther; Harder, Dietrich

2005-01-01

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield

Note: Large active area solid state photon counter with 20 ps timing resolution and 60 fs detection delay stability

Science.gov (United States)

Prochazka, Ivan; Kodet, Jan; Eckl, Johann; Blazej, Josef

2017-10-01

We are reporting on the design, construction, and performance of a photon counting detector system, which is based on single photon avalanche diode detector technology. This photon counting device has been optimized for very high timing resolution and stability of its detection delay. The foreseen application of this detector is laser ranging of space objects, laser time transfer ground to space and fundamental metrology. The single photon avalanche diode structure, manufactured on silicon using K14 technology, is used as a sensor. The active area of the sensor is circular with 200 μm diameter. Its photon detection probability exceeds 40% in the wavelength range spanning from 500 to 800 nm. The sensor is operated in active quenching and gating mode. A new control circuit was optimized to maintain high timing resolution and detection delay stability. In connection to this circuit, timing resolution of the detector is reaching 20 ps FWHM. In addition, the temperature change of the detection delay is as low as 70 fs/K. As a result, the detection delay stability of the device is exceptional: expressed in the form of time deviation, detection delay stability of better than 60 fs has been achieved. Considering the large active area aperture of the detector, this is, to our knowledge, the best timing performance reported for a solid state photon counting detector so far.

Bi-dimensional arrays of SPAD for time-resolved single photon imaging

International Nuclear Information System (INIS)

Tudisco, S.; Lanzano, L.; Musumeci, F.; Neri, L.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

2009-01-01

Many scientific areas like astronomy, biophysics, biomedicine, nuclear and plasma science, etc. are interested in the development of a new time-resolved single photon imaging device. Such a device represents today one of the most challenging goals in the field of photonics. In collaboration with Catania R and D staff of ST-Microelectronics (STM) we created, during the last few years, a new avalanche photosensor-Single Photon Avalanche Diode (SPAD) able to detect and count, with excellent performance, single photons. Further we will discuss the possible realization of a single photon imaging device through the many elements integration (bi-dimensional arrays) of SPADs. In order to achieve the goal, it is also important to develop an appropriate readout strategy able to address the time information of each individual sensor and in order to read a great number of elements easily. First prototypes were designed and manufactured by STM and the results are reported here. In the paper we will discuss in particular: (i) sensor performance (gain, photodetection efficiency, timing, after-pulsing, etc.); (ii) array performance (layout, cross-talk, etc.); (iii) readout strategy (quenching, electronics), and (iv) first imaging results (general performance).

Large-area NbN superconducting nanowire avalanche photon detectors with saturated detection efficiency

Science.gov (United States)

Murphy, Ryan P.; Grein, Matthew E.; Gudmundsen, Theodore J.; McCaughan, Adam; Najafi, Faraz; Berggren, Karl K.; Marsili, Francesco; Dauler, Eric A.

2015-05-01

Superconducting circuits comprising SNSPDs placed in parallel—superconducting nanowire avalanche photodetectors, or SNAPs—have previously been demonstrated to improve the output signal-to-noise ratio (SNR) by increasing the critical current. In this work, we employ a 2-SNAP superconducting circuit with narrow (40 nm) niobium nitride (NbN) nanowires to improve the system detection efficiency to near-IR photons while maintaining high SNR. Additionally, while previous 2-SNAP demonstrations have added external choke inductance to stabilize the avalanching photocurrent, we show that the external inductance can be entirely folded into the active area by cascading 2-SNAP devices in series to produce a greatly increased active area. We fabricated series-2-SNAP (s2-SNAP) circuits with a nanowire length of 20 μm with cascades of 2-SNAPs providing the choke inductance necessary for SNAP operation. We observed that (1) the detection efficiency saturated at high bias currents, and (2) the 40 nm 2-SNAP circuit critical current was approximately twice that for a 40 nm non-SNAP configuration.

Lumped transmission line avalanche pulser

Science.gov (United States)

Booth, Rex

1995-01-01

A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.

Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

International Nuclear Information System (INIS)

Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Peters, David W.; Davids, Paul S.

2016-01-01

The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO_2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.

Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

NARCIS (Netherlands)

Agarwal, V.; Dutta, S; Annema, AJ; Hueting, RJE; Steeneken, P.G.; Nauta, B

2017-01-01

This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant

Visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals.

Science.gov (United States)

Wang, Baoju; Zhan, Qiuqiang; Zhao, Yuxiang; Wu, Ruitao; Liu, Jing; He, Sailing

2016-01-25

Further development of multiphoton microscopic imaging is confronted with a number of limitations, including high-cost, high complexity and relatively low spatial resolution due to the long excitation wavelength. To overcome these problems, for the first time, we propose visible-to-visible four-photon ultrahigh resolution microscopic imaging by using a common cost-effective 730-nm laser diode to excite the prepared Nd(3+)-sensitized upconversion nanoparticles (Nd(3+)-UCNPs). An ordinary multiphoton scanning microscope system was built using a visible CW diode laser and the lateral imaging resolution as high as 161-nm was achieved via the four-photon upconversion process. The demonstrated large saturation excitation power for Nd(3+)-UCNPs would be more practical and facilitate the four-photon imaging in the application. A sample with fine structure was imaged to demonstrate the advantages of visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals. Combining the uniqueness of UCNPs, the proposed visible-to-visible four-photon imaging would be highly promising and attractive in the field of multiphoton imaging.

Third order mode laser diode: design of a twin photon source

International Nuclear Information System (INIS)

Ducci, S.; Berger, V.; Rossi, A. de; Ortiz, V.; Calligaro, M.; Vinter, B.; Nagle, J.; Berger, V.

2004-01-01

We demonstrate the lasing action on a third order waveguide mode in a laser diode. The AlGaAs heterostructure has been designed to achieve a parametric emission of photons pairs through modal phase matching. This device is very compact and does not generate coupling loss between the laser source and the non-linear waveguide. It is the first step on the way to design a twin photon micro-source. (A.C.)

A filter technique for optimising the photon energy response of a silicon pin diode dosemeter

International Nuclear Information System (INIS)

Olsher, R.H.; Eisen, Y.

1996-01-01

Unless they are energy compensated, silicon PIN diodes used in electronic pocket dosemeters, have significant over-response below 200 keV. Siemens is using three diodes in parallel with individual filters to produce excellent energy and angular response. An algorithm based on the photon spectrum of a single diode could be used to flatten the energy response. The commercial practice is to use a single diode with a simple filter to flatten the energy response, despite the mediocre low energy photon. The filter technique with an opening has been used for energy compensating GM detectors and proportional counters and a new variation of it has been investigated which compensates the energy response of a silicon PIN diode and maintains an extended low energy response. It uses a composite filter of two or more materials with several openings whose individual area is in the range of 15% to 25% of the diode's active area. One opening is centred over the diode's active area and others are located at the periphery of the active area to preserve a good polar response to ±45 o . Monte Carlo radiation transport methods were used to simulate the coupled electron-photon transport through a Hamamatsu S2506-01 diode and to determine the energy response of the diode for a variety of filters. In current mode, the resultant dosemeter energy response relative to air dose was within -15% and +30% for 0 o incidence over the energy range from 15 keV to 1 MeV. In pulse mode, the resultant dosemeter energy response was within -25% and +50% for 0 o incidence over the energy range from 30 keV to 10 MeV. For ±45 o incidence, the energy response was within -25% and +40% from 40 keV to 10 MeV. Theoretical viability of the filter technique has been shown in this work (Author)

3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection

Science.gov (United States)

Vignetti, M. M.; Calmon, F.; Pittet, P.; Pares, G.; Cellier, R.; Quiquerez, L.; Chaves de Albuquerque, T.; Bechetoille, E.; Testa, E.; Lopez, J.-P.; Dauvergne, D.; Savoy-Navarro, A.

2018-02-01

Single-Photon Avalanche Diodes (SPADs) are p-n junctions operated in Geiger Mode by applying a reverse bias above the breakdown voltage. SPADs have the advantage of featuring single photon sensitivity with timing resolution in the picoseconds range. Nevertheless, their relatively high Dark Count Rate (DCR) is a major issue for charged particle detection, especially when it is much higher than the incoming particle rate. To tackle this issue, we have developed a 3D Silicon Coincidence Avalanche Detector (3D-SiCAD). This novel device implements two vertically aligned SPADs featuring on-chip electronics for the detection of coincident avalanche events occurring on both SPADs. Such a coincidence detection mode allows an efficient discrimination of events related to an incoming charged particle (producing a quasi-simultaneous activation of both SPADs) from dark counts occurring independently on each SPAD. A 3D-SiCAD detector prototype has been fabricated in CMOS technology adopting a 3D flip-chip integration technique, and the main results of its characterization are reported in this work. The particle detection efficiency and noise rejection capability for this novel device have been evaluated by means of a β- strontium-90 radioactive source. Moreover the impact of the main operating parameters (i.e. the hold-off time, the coincidence window duration, the SPAD excess bias voltage) over the particle detection efficiency has been studied. Measurements have been performed with different β- particles rates and show that a 3D-SiCAD device outperforms single SPAD detectors: the former is indeed capable to detect particle rates much lower than the individual DCR observed in a single SPAD-based detectors (i.e. 2 to 3 orders of magnitudes lower).

High multi-photon visible upconversion emissions of Er3+ singly doped BiOCl microcrystals: A photon avalanche of Er3+ induced by 980 nm excitation

International Nuclear Information System (INIS)

Li, Yongjin; Song, Zhiguo; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi

2013-01-01

Under 980 nm excitation, high multi-photon upconversion (UC) emission from the 2 H 11/2 / 4 S 3/2 (green) and 4 F 9/2 (red) levels of Er 3+ ions were observed from Er 3+ singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er 3+ ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er 3+ ions doping

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

Energy Technology Data Exchange (ETDEWEB)

Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2016-06-20

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

International Nuclear Information System (INIS)

Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

2009-01-01

Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

Science.gov (United States)

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

Avalanche photodiodes for ISABELLE detectors

International Nuclear Information System (INIS)

Strand, R.C.

1979-01-01

At ISABELLE some requirements for detecting bursts of photons are not met by standard photomultiplier tubes. The characteristics of immunity to magnetic fields, small size (few mm), low power consumption (approx. 100 mW), insensitivity to optical overloads, and wide dynamic range (approx. 60 dB) are achieved with difficulty, if at all, with PMTs. These are characteristics of the solid state avalanche photodiode (APD), the preferred detector for light-wave communications. Successful field tests with APD detectors stimulated the design of standard optical-fiber communication systems to replace wire carriers by the early 1980's. In other characteristics, i.e., counting rate, pulse-height resolution, effective quantum efficiency, detection efficiency, and reliability, bare APDs are equivalent to standard PMTs. APDs with currently available amplifiers cannot resolve single photoelectrons but they could provide reasonable detection efficiencies and pulse-height resolution for packets of approx. > 100 photons. Commercially available APDs can cost up to 100 times as much as PMTs per active area, but they are potentially much cheaper. Six topics are discussed: (1) detectors for light-wave communication and detectors for particles, (2) avalanche photodiodes, (3) commercially available APDs, (4) dynamic response of PMTs and bare APDs, (5) photon counting with cold APDs, and (6) conclusions and recommendations

High-speed single-photon signaling for daytime QKD

Science.gov (United States)

Bienfang, Joshua; Restelli, Alessandro; Clark, Charles

2011-03-01

The distribution of quantum-generated cryptographic key at high throughputs can be critically limited by the performance of the systems' single-photon detectors. While noise and afterpulsing are considerations for all single-photon QKD systems, high-transmission rate systems also have critical detector timing-resolution and recovery time requirements. We present experimental results exploiting the high timing resolution and count-rate stability of modified single-photon avalanche diodes (SPADs) in our GHz QKD system operating over a 1.5 km free-space link that demonstrate the ability to apply extremely short temporal gates, enabling daytime free-space QKD with a 4% QBER. We also discuss recent advances in gating techniques for InGaAs SPADs that are suitable for high-speed fiber-based QKD. We present afterpulse-probability measurements that demonstrate the ability to support single-photon count rates above 100 MHz with low afterpulse probability. These results will benefit the design and characterization of free-space and fiber QKD systems. A. Restelli, J.C. Bienfang A. Mink, and C.W. Clark, IEEE J. Sel. Topics in Quant. Electron 16, 1084 (2010).

Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

Science.gov (United States)

Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

2014-01-01

The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

Ultrathin NbN film superconducting single-photon detector array

International Nuclear Information System (INIS)

Smirnov, K; Korneev, A; Minaeva, O; Divochiy, A; Tarkhov, M; Ryabchun, S; Seleznev, V; Kaurova, N; Voronov, B; Gol'tsman, G; Polonsky, S

2007-01-01

We report on the fabrication process of the 2 x 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan; Tsai, Meng Lin; He, Jr-Hau

2015-01-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern

High multi-photon visible upconversion emissions of Er{sup 3+} singly doped BiOCl microcrystals: A photon avalanche of Er{sup 3+} induced by 980 nm excitation

Energy Technology Data Exchange (ETDEWEB)

Li, Yongjin; Song, Zhiguo, E-mail: songzg@kmust.edu.cn; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2013-12-02

Under 980 nm excitation, high multi-photon upconversion (UC) emission from the {sup 2}H{sub 11/2}/{sup 4}S{sub 3/2} (green) and {sup 4}F{sub 9/2} (red) levels of Er{sup 3+} ions were observed from Er{sup 3+} singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er{sup 3+} ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er{sup 3+} ions doping.

Novel micropixel avalanche photodiodes (MAPD) with superhigh pixel density

International Nuclear Information System (INIS)

Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.

2010-01-01

In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g., some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPDs) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET

Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

CERN Document Server

Saveliev, V

2000-01-01

The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating

Energy Technology Data Exchange (ETDEWEB)

Liang Xiaolei; Ma Jian; Jin Ge; Chen Zengbing; Zhang Jun; Pan Jianwei [Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu Jianhong; Wang Quan; Du Debing [Anhui Quantum Communication Technology Co., Ltd., Hefei, Anhui 230088 (China)

2012-08-15

InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable, and user-friendly tabletop InGaAs/InP single-photon detector system operating at a 1.25 GHz gate rate that fully integrates functions for controlling and optimizing SPAD performance. We characterize the key parameters of the detector system and test the long-term stability of the system for continuous operation of 75 h. The detector system can substantially enhance QKD performance and our present work paves the way for practical high-speed QKD applications.

Single-photon detector operating under extremely high background photon flux conditions

International Nuclear Information System (INIS)

Prochazka, Ivan; Sopko, Bruno; Blazej, Josef

2009-01-01

We are reporting our results in research and development in the field of avalanche semiconductor single-photon detectors and their application. Our goal was a development of a solid-state photon-counting detector capable of high-precision photon arrival time tagging in extremely harsh operating conditions. The background photon flux exceeding 10 9 photons per second hitting the detector active area should not avoid the useful signal detection and recognition on the signal level of units of photons per second. This is background photon flux about two orders of magnitude higher than what the conventional solid-state photon counters accept. The detection timing resolution should be better than 100 ps and the delay stability should be on picosecond level. We have developed and tested the active quenched and gated avalanche structure on silicon providing the required features in connection with the K14 detection chips. The detector is capable of gated operation under the conditions of background photon flux of 5x10 9 photons per second. The operational detector tolerates long term exposures to the input photon flux exceeding 10 15 photons (>1 mW) per second without damage.

heat flow in a finite isolated pulsed avalanche semiconductor diode

African Journals Online (AJOL)

ES Obe

1981-03-01

Mar 1, 1981 ... high-power high-efficiency avalanche semiconductor devices. The ... computed, and useful practical design curves for a specified operation .... iv. For spherical shells of radius, ρ(x,y,z) = √x2+y2+z2. > R, the heat source.

Theory of suppressing avalanche process of carrier in short pulse laser irradiated dielectrics

Energy Technology Data Exchange (ETDEWEB)

Deng, H. X., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Zu, X. T., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Xiang, X. [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, W. G.; Yuan, X. D. [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, K., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu [Department of Materials Engineering and Sciences, University of Michigan, 413B Space Research Building, Ann Arbor, Michigan 48109-2143 (United States); Gao, F. [Pacific Northwest National Laboratory, P. O. Box 999, Richland, Washington 99352 (United States)

2014-05-28

A theory for controlling avalanche process of carrier during short pulse laser irradiation is proposed. We show that avalanche process of conduction band electrons (CBEs) is determined by the occupation number of phonons in dielectrics. The theory provides a way to suppress avalanche process and a direct judgment for the contribution of avalanche process and photon ionization process to the generation of CBEs. The obtained temperature dependent rate equation shows that the laser induced damage threshold of dielectrics, e.g., fused silica, increase nonlinearly with the decreases of temperature. Present theory predicts a new approach to improve the laser induced damage threshold of dielectrics.

New method for determining avalanche breakdown voltage of silicon photomultipliers

International Nuclear Information System (INIS)

Chirikov-Zorin, I.

2017-01-01

The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

Research and development on a sub 100 PICO second time-of-flight system based on silicon avalanche diodes

Energy Technology Data Exchange (ETDEWEB)

Choi, Y.; Hirsch, A.; Hauger, A.; Scharenberg, R.; Tincknell, M. [Purdue Univ., West Lafayette, IN (United States); Rai, G. [Lawrence Berkeley Lab., CA (United States)

1991-12-31

Particle identification requires a momentum measurement and a second independent determination either energy loss (dE/dx) or time of flight (TOF). To cover a momentum range from 0.1 GeV/c to 1.5 GeV/c in the STAR detector requires both the dE/dx and TOF techniques. This research is designed to develop the avalanche diode (AVD) detectors for TOF systems and evaluate their performance. The test of a small prototype system would be carried out at Purdue and at accelerator test beam sites. The Purdue group has developed a complete test setup for evaluating the time resolution of the AVD`s which includes fast-slow electronic channels, CAMAC based electronic modules and a temperature controlled environment. The AVDs also need to be tested in a 0.5 tesla magnetic field. The Purdue group would augment this test set up to include a magnetic field.

Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

International Nuclear Information System (INIS)

Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun

2008-01-01

Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS

Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

Energy Technology Data Exchange (ETDEWEB)

Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)

2008-11-15

Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS.

Numerical analysis of intrinsic bistability and chromatic switching in Tm3+ single-doped systems under photon avalanche pumping scheme

International Nuclear Information System (INIS)

Li Li; Zhang Xinlu; Chen Lixue

2008-01-01

In this paper, we predict and numerically demonstrate the intrinsic intensity bistability, spectra bistability and chromatic switching of visible-infrared emission in Tm 3+ single-doped systems that are pumped by the photon avalanche scheme at 648 nm. Based on the coupled rate equation theory, the evolutions of the populations at various Tm 3+ energy levels, emission spectra and fluorescence intensity versus pump excitation are numerically investigated in detail. The results show that intrinsic optical bistability (IOB) associated with emission spectra and luminescence intensity takes place in the vicinity of the avalanche threshold (∼10 kW cm -2 ). When the pump excitation rises above the switching threshold (∼17.5 kW cm -2 ), the chromatic switching between the infrared (1716 nm) and the visible blue (452/469 nm) spectra can be performed. Moreover, the influences of system parameters on IOB and the origin of chromatic switching are discussed. These unique characteristics of Tm 3+ -doped systems would lead to the new possibility of the development of pump-controlled all-solid-state luminescence switches and optical bistability switches.

Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

Energy Technology Data Exchange (ETDEWEB)

Buttafava, Mauro, E-mail: mauro.buttafava@polimi.it; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Dalla Mora, Alberto [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy)

2014-08-15

We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor.

Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

International Nuclear Information System (INIS)

Buttafava, Mauro; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto; Dalla Mora, Alberto

2014-01-01

We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor

Novel micropixel avalanche photodiodes (MAPD) with super high pixel density

International Nuclear Information System (INIS)

Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.; Gavrishchuk, O.; Guskov, A.; Khovanskiy, N.; Krumshtein, Z.; Leitner, R.; Meshcheryakov, G.; Nagaytsev, A.; Olchevski, A.; Rezinko, T.; Sadovskiy, A.; Sadygov, Z.; Savin, I.; Tchalyshev, V.; Tyapkin, I.; Yarygin, G.; Zerrouk, F.

2011-01-01

In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g. some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPD) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by the Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET.

SiPM as photon counter for Cherenkov detectors

International Nuclear Information System (INIS)

Roy, B.J.; Orth, H.; Schwarz, C.; Wilms, A.; Peters, K.

2009-01-01

Silicon photomultipliers (SiPMs) are very new type of photon counting devices that show great promise to be used as detection device in combination with scintillators/ Cherenkov radiators. SiPM is essentially an avalanche photo-diode operated in limited Geiger mode. They have been considered as potential readout devices for DIRC counter of the PANDA detector which is one of the large experiment at FAIR- the new international facility to be built at GSI, Darmstadt. In addition, the potential use of SiPM includes medical diagnosis, fluorescence measurement and high energy physics experiments. The SiPM module is a photon counting device capable of low light level detection. It is essentially an opto-semiconductor device with excellent photon counting capability and possesses great advantages over the conventional PMTs because of low voltage operation and insensitivity to magnetic fields. In many of the high energy physics experiments, the photon sensors are required to operate in high magnetic fields precluding the use of conventional PMTs. This problem can be over come with the use of SiPMs. With this motivation in mind, we have developed a SiPM test facility and have tested several commercially available SiPM for their performance study and comparison with other photon counting devices

High gain multigap avalanche detectors for Cerenkov ring imaging

Energy Technology Data Exchange (ETDEWEB)

Gilmore, R.S.; Lavender, W.M.; Leith, D.W.G.S.; Williams, S.H.

1980-10-01

We report on a continuing study of multigap parallel plate avalanche chambers, primarily as photoelectron detectors for use with Cerenkov ring imaging counters. By suitable control of the fields in successive gaps and by introducing screens to reduce photon feedback to the cathode the gain many be increased considerably. We have obtained gains in excess of 6 x 10/sup 7/ for photoelectrons with a good pulse height spectrum and expect to increase this further. We discuss the use of resistive anodes to give avalanche positions in two dimensions by charge division.

Photon-HDF5: An Open File Format for Timestamp-Based Single-Molecule Fluorescence Experiments.

Science.gov (United States)

Ingargiola, Antonino; Laurence, Ted; Boutelle, Robert; Weiss, Shimon; Michalet, Xavier

2016-01-05

We introduce Photon-HDF5, an open and efficient file format to simplify exchange and long-term accessibility of data from single-molecule fluorescence experiments based on photon-counting detectors such as single-photon avalanche diode, photomultiplier tube, or arrays of such detectors. The format is based on HDF5, a widely used platform- and language-independent hierarchical file format for which user-friendly viewers are available. Photon-HDF5 can store raw photon data (timestamp, channel number, etc.) from any acquisition hardware, but also setup and sample description, information on provenance, authorship and other metadata, and is flexible enough to include any kind of custom data. The format specifications are hosted on a public website, which is open to contributions by the biophysics community. As an initial resource, the website provides code examples to read Photon-HDF5 files in several programming languages and a reference Python library (phconvert), to create new Photon-HDF5 files and convert several existing file formats into Photon-HDF5. To encourage adoption by the academic and commercial communities, all software is released under the MIT open source license. Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Photonic synthesis of continuous‐wave millimeter‐wave signals using a passively mode‐locked laser diode and selective optical filtering

DEFF Research Database (Denmark)

Acedo, P.; Carpintero, G.; Criado, A.R.

2012-01-01

We report a photonic synthesis scheme for continuous wave millimeter‐wave signal generation using a single passively mode‐locked laser diode (PMLLD), optical filtering and photomixing in a fast photodiode.The phase noise of the photonically synthesized signals is evaluated and inherits...

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

International Nuclear Information System (INIS)

Zhen, Aigong; Ma, Ping; Zhang, Yonghui; Guo, Enqing; Tian, Yingdong; Liu, Boting; Guo, Shikuan; Shan, Liang; Wang, Junxi; Li, Jinmin

2014-01-01

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal could improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically

Investigation of Avalanche Photodiodes and Multipixel Photon Counters as Light Detectors for Cosmic Rays

Science.gov (United States)

Vasquez, Jaime; Saavedra, Arthur; Ramos, Roxana; Tavares, Pablo; Wade, Marcus; Fan, Sewan; Haag, Brooke

2013-04-01

Through the Research Scholars Institute, students of Hartnell Community College experimented with the application of avalanche photodiodes (APDs) as cosmic ray detectors during the summer of 2012. An APD detector was coupled with a 10 meter long wavelength shifting fiber (WSF) wrapped around a cylindrical plastic scintillator to maximize signal detection. A photomultiplier tube (PMT) was used in conjunction to detect the same scintillation light caused by incoming cosmic rays. Two APD detectors were evaluated to confirm the viability of the setup. In addition, a similar setup was recently utilized to implement multi-pixel photon counters (MPPCs) as readout detectors. Under this configuration, a high gain preamplifier was used to amplify the signals for both the MPPC and APD detectors. We report on our results characterizing the MPPC and discuss its overall performance. Compared to the APD, our findings suggest that the MPPC detector has greater sensitivity in detecting weak light signals, and can be used in place of the PMT for certain counting applications.

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

DEFF Research Database (Denmark)

Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

2008-01-01

Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

KAUST Repository

Shen, Chao

2017-11-30

The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Ooi, Boon S.

2017-01-01

The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

Investigation of avalanche photodiodes

Energy Technology Data Exchange (ETDEWEB)

Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

1996-06-01

Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO{sub 4} crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO{sub 4} crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm{sup 2}. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab.

Investigation of avalanche photodiodes

International Nuclear Information System (INIS)

Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

1996-06-01

Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO 4 crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO 4 crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm 2 . We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab

Characterization of midwave infrared InSb avalanche photodiode

Energy Technology Data Exchange (ETDEWEB)

Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

2015-06-28

This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

Studies of light emission by continuously sensitive avalanche chambers

International Nuclear Information System (INIS)

Charpak, G.; Dominik, W.; Fabre, J.P.; Gaudaen, J.; Sauli, F.; Suzuki, M.

1988-01-01

The optimal conditions for the optical recording of images of electron avalanches between parallel meshes have been studied. The emission spectra of gas mixtures have been investigated, where triethylamine (TEA), tetrakis(dimethylamine)ethylene (TMAE), and nitrogen, are used as the photon-emitting agents. For a given charge gain, the photon intensity decreases with electric field. This favours amplification between parallel meshes instead of wires. The use of intensified CCD cameras permits the recording of the local energy loss along the tracks. (orig.)

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-04-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

International Nuclear Information System (INIS)

Vanyushin, I. V.; Gergel, V. A.; Gontar', V. M.; Zimoglyad, V. A.; Tishin, Yu. I.; Kholodnov, V. A.; Shcheleva, I. M.

2007-01-01

A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-μm silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength λ = 0.56 μm in the irradiance range of 10 -3 -10 2 lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high

High-performance integrated pick-up circuit for SPAD arrays in time-correlated single photon counting

Science.gov (United States)

Acconcia, Giulia; Cominelli, Alessandro; Peronio, Pietro; Rech, Ivan; Ghioni, Massimo

2017-05-01

The analysis of optical signals by means of Single Photon Avalanche Diodes (SPADs) has been subject to a widespread interest in recent years. The development of multichannel high-performance Time Correlated Single Photon Counting (TCSPC) acquisition systems has undergone a fast trend. Concerning the detector performance, best in class results have been obtained resorting to custom technologies leading also to a strong dependence of the detector timing jitter from the threshold used to determine the onset of the photogenerated current flow. In this scenario, the avalanche current pick-up circuit plays a key role in determining the timing performance of the TCSPC acquisition system, especially with a large array of SPAD detectors because of electrical crosstalk issues. We developed a new current pick-up circuit based on a transimpedance amplifier structure able to extract the timing information from a 50-μm-diameter custom technology SPAD with a state-of-art timing jitter as low as 32ps and suitable to be exploited with SPAD arrays. In this paper we discuss the key features of this structure and we present a new version of the pick-up circuit that also provides quenching capabilities in order to minimize the number of interconnections required, an aspect that becomes more and more crucial in densely integrated systems.

Setting best practice criteria for self-differencing avalanche photodiodes in quantum key distribution

Science.gov (United States)

Koehler-Sidki, Alexander; Dynes, James F.; Lucamarini, Marco; Roberts, George L.; Sharpe, Andrew W.; Savory, Seb J.; Yuan, Zhiliang; Shields, Andrew J.

2017-10-01

In recent years, the security of avalanche photodiodes as single photon detectors for quantum key distribution has been subjected to much scrutiny. The most prominent example of this surrounds the vulnerability of such devices to blinding under strong illumination. We focus on self-differencing avalanche photodiodes, single photon detectors that have demonstrated count rates exceeding 1 GCounts/s resulting in secure key rates over 1 MBit/s. These detectors use a passive electronic circuit to cancel any periodic signals thereby enhancing detection sensitivity. However this intrinsic feature can be exploited by adversaries to gain control of the devices using illumination of a moderate intensity. Through careful experimental examinations, we define here a set of criteria for these detectors to avoid such attacks.

Linear LIDAR versus Geiger-mode LIDAR: impact on data properties and data quality

Science.gov (United States)

Ullrich, A.; Pfennigbauer, M.

2016-05-01

LIDAR has become the inevitable technology to provide accurate 3D data fast and reliably even in adverse measurement situations and harsh environments. It provides highly accurate point clouds with a significant number of additional valuable attributes per point. LIDAR systems based on Geiger-mode avalanche photo diode arrays, also called single photon avalanche photo diode arrays, earlier employed for military applications, now seek to enter the commercial market of 3D data acquisition, advertising higher point acquisition speeds from longer ranges compared to conventional techniques. Publications pointing out the advantages of these new systems refer to the other category of LIDAR as "linear LIDAR", as the prime receiver element for detecting the laser echo pulses - avalanche photo diodes - are used in a linear mode of operation. We analyze the differences between the two LIDAR technologies and the fundamental differences in the data they provide. The limitations imposed by physics on both approaches to LIDAR are also addressed and advantages of linear LIDAR over the photon counting approach are discussed.

Long-range depth profiling of camouflaged targets using single-photon detection

Science.gov (United States)

Tobin, Rachael; Halimi, Abderrahim; McCarthy, Aongus; Ren, Ximing; McEwan, Kenneth J.; McLaughlin, Stephen; Buller, Gerald S.

2018-03-01

We investigate the reconstruction of depth and intensity profiles from data acquired using a custom-designed time-of-flight scanning transceiver based on the time-correlated single-photon counting technique. The system had an operational wavelength of 1550 nm and used a Peltier-cooled InGaAs/InP single-photon avalanche diode detector. Measurements were made of human figures, in plain view and obscured by camouflage netting, from a stand-off distance of 230 m in daylight using only submilliwatt average optical powers. These measurements were analyzed using a pixelwise cross correlation approach and compared to analysis using a bespoke algorithm designed for the restoration of multilayered three-dimensional light detection and ranging images. This algorithm is based on the optimization of a convex cost function composed of a data fidelity term and regularization terms, and the results obtained show that it achieves significant improvements in image quality for multidepth scenarios and for reduced acquisition times.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

Science.gov (United States)

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

Science.gov (United States)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

Energy pumping in electrical circuits under avalanche noise.

Science.gov (United States)

Kanazawa, Kiyoshi; Sagawa, Takahiro; Hayakawa, Hisao

2014-07-01

We theoretically study energy pumping processes in an electrical circuit with avalanche diodes, where non-Gaussian athermal noise plays a crucial role. We show that a positive amount of energy (work) can be extracted by an external manipulation of the circuit in a cyclic way, even when the system is spatially symmetric. We discuss the properties of the energy pumping process for both quasistatic and finite-time cases, and analytically obtain formulas for the amounts of the work and the power. Our results demonstrate the significance of the non-Gaussianity in energetics of electrical circuits.

Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

International Nuclear Information System (INIS)

Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

1999-01-01

The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

Single photon detection with self-quenching multiplication

Science.gov (United States)

Zheng, Xinyu (Inventor); Cunningham, Thomas J. (Inventor); Pain, Bedabrata (Inventor)

2011-01-01

A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.

Monolithic array of 32 SPAD pixels for single-photon imaging at high frame rates

International Nuclear Information System (INIS)

Tisa, Simone; Guerrieri, Fabrizio; Zappa, Franco

2009-01-01

We present a single-chip monolithic array of 32 Single-Photon Avalanche Diodes (SPAD) and associated electronics for imaging at high frame rates and high sensitivity. Photodetectors, front-end circuitry and control electronics used to manage the array are monolithically integrated on the same chip in a standard 0.35 μm CMOS high-voltage technology. The array is composed of 32 'smart' pixels working in photon counting mode and functioning in a parallel fashion. Every cell comprises of an integrated SPAD photodetector, a novel quenching circuit named as Variable Load Quenching Circuit (VLQC), counting electronics and a buffer memory. Proper ancillary electronics that perform the arbitration of photon counts between two consecutive frames is integrated as well. Thanks to the presence of in-pixel memory registers, the inter-frame dead time between subsequent frames is limited to few nanoseconds. Since integration and download are performed simultaneously and the array can be addressed like a standard digital memory, the achievable maximum frame rate is very high in the order of hundreds of thousands of frame/s.

A new method to improve multiplication factor in micro-pixel avalanche photodiodes with high pixel density

Energy Technology Data Exchange (ETDEWEB)

Sadygov, Z. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Ahmadov, F. [National Nuclear Research Center, Baku (Azerbaijan); Khorev, S. [Zecotek Photonics Inc., Vancouver (Canada); Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Madatov, R.; Mehdiyeva, R. [Institute of Radiation Problems, Baku (Azerbaijan); Zerrouk, F. [Zecotek Photonics Inc., Vancouver (Canada)

2016-07-11

Presented is a new model describing development of the avalanche process in time, taking into account the dynamics of electric field within the depleted region of the diode and the effect of parasitic capacitance shunting individual quenching micro-resistors on device parameters. Simulations show that the effective capacitance of a single pixel, which defines the multiplication factor, is the sum of the pixel capacitance and a parasitic capacitance shunting its quenching micro-resistor. Conclusions obtained as a result of modeling open possibilities of improving the pixel gain in micropixel avalanche photodiodes with high pixel density (or low pixel capacitance).

SPADs in CMOS : When Physics Meets Engineering

NARCIS (Netherlands)

Charbon, E.

2011-01-01

Single-photon avalanche diodes (SPADs) are a class of photodiodes biased above breakdown; in this mode of operation, known as Geiger mode, the devices are capable of detecting one or more photons with high timing accuracy. SPADs are useful in a variety of applications where picosecond timing

Development of a 144-channel Hybrid Avalanche Photo-Detector for Belle II ring-imaging Cherenkov counter with an aerogel radiator

Energy Technology Data Exchange (ETDEWEB)

Nishida, S., E-mail: shohei.nishida@kek.jp [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Adachi, I. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Hamada, N. [Toho University, Funabashi (Japan); Hara, K. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Iijima, T. [Nagoya University, Nagoya (Japan); Iwata, S.; Kakuno, H. [Tokyo Metropolitan University, Hachioji (Japan); Kawai, H. [Chiba University, Chiba (Japan); Korpar, S.; Krizan, P. [Jozef Stefan Institute, Ljubljana (Slovenia); Ogawa, S. [Toho University, Funabashi (Japan); Pestotnik, R.; Ŝantelj, L.; Seljak, A. [Jozef Stefan Institute, Ljubljana (Slovenia); Sumiyoshi, T. [Tokyo Metropolitan University, Hachioji (Japan); Tabata, M. [Chiba University, Chiba (Japan); Tahirovic, E. [Jozef Stefan Institute, Ljubljana (Slovenia); Yoshida, K. [Tokyo Metropolitan University, Hachioji (Japan); Yusa, Y. [Niigata University, Niigata (Japan)

2015-07-01

The Belle II detector, a follow up of the very successful Belle experiment, is under construction at the SuperKEKB electron–positron collider at KEK in Japan. For the PID system in the forward region of the spectrometer, a proximity-focusing ring-imaging Cherenkov counter with an aerogel radiator is being developed. For the position sensitive photon sensor, a 144-channel Hybrid Avalanche Photo-Detector has been developed with Hamamatsu Photonics K.K. In this report, we describe the specification of the Hybrid Avalanche Photo-Detector and the status of the mass production.

Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com fotons

Energy Technology Data Exchange (ETDEWEB)

Bizetto, Cesar Augusto

2013-07-01

In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer KeithleyÒ 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens PrimusÒ linear accelerator), 6 and 15 MV (Novalis TXÒ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens PrimusÒ the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TXÒ the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

In-depth study of single photon time resolution for the Philips digital silicon photomultiplier

International Nuclear Information System (INIS)

Liu, Z.; Pizzichemi, M.; Ghezzi, A.; Paganoni, M.; Gundacker, S.; Auffray, E.; Lecoq, P.

2016-01-01

The digital silicon photomultiplier (SiPM) has been commercialised by Philips as an innovative technology compared to analog silicon photomultiplier devices. The Philips digital SiPM, has a pair of time to digital converters (TDCs) connected to 12800 single photon avalanche diodes (SPADs). Detailed measurements were performed to understand the low photon time response of the Philips digital SiPM. The single photon time resolution (SPTR) of every single SPAD in a pixel consisting of 3200 SPADs was measured and an average value of 85 ps full width at half maximum (FWHM) was observed. Each SPAD sends the signal to the TDC with different signal propagation time, resulting in a so called trigger network skew. This distribution of the trigger network skew for a pixel (3200 SPADs) has been measured and a variation of 50 ps FWHM was extracted. The SPTR of the whole pixel is the combination of SPAD jitter, trigger network skew, and the SPAD non-uniformity. The SPTR of a complete pixel was 103 ps FWHM at 3.3 V above breakdown voltage. Further, the effect of the crosstalk at a low photon level has been studied, with the two photon time resolution degrading if the events are a combination of detected (true) photons and crosstalk events. Finally, the time response to multiple photons was investigated.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

Science.gov (United States)

Aull, Brian

2016-04-08

This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

STUDY ON SIMULATION METHOD OF AVALANCHE : FLOW ANALYSIS OF AVALANCHE USING PARTICLE METHOD

OpenAIRE

塩澤, 孝哉

2015-01-01

In this paper, modeling for the simulation of the avalanche by a particle method is discussed. There are two kinds of the snow avalanches, one is the surface avalanche which shows a smoke-like flow, and another is the total-layer avalanche which shows a flow like Bingham fluid. In the simulation of the surface avalanche, the particle method in consideration of a rotation resistance model is used. The particle method by Bingham fluid is used in the simulation of the total-layer avalanche. At t...

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan

2015-03-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

Development of high performance readout ASICs for silicon photomultipliers (SiPMs)

International Nuclear Information System (INIS)

Shen, Wei

2012-01-01

Silicon Photomultipliers (SiPMs) are novel kind of solid state photon detectors with extremely high photon detection resolution. They are composed of hundreds or thousands of avalanche photon diode pixels connected in parallel. These avalanche photon diodes are operated in Geiger Mode. SiPMs have the same magnitude of multiplication gain compared to the conventional photomultipliers (PMTs). Moreover, they have a lot of advantages such as compactness, relatively low bias voltage and magnetic field immunity etc. Special readout electronics are required to preserve the high performance of the detector. KLauS and STiC are two CMOS ASIC chips designed in particular for SiPMs. KLauS is used for SiPM charge readout applications. Since SiPMs have a much larger detector capacitance compared to other solid state photon detectors such as PIN diodes and APDs, a few special techniques are used inside the chip to make sure a descent signal to noise ratio for pixel charge signal can be obtained. STiC is a chip dedicated to SiPM time-of-flight applications. High bandwidth and low jitter design schemes are mandatory for such applications where time jitter less than tens of picoseconds is required. Design schemes and error analysis as well as measurement results are presented in the thesis.

Photon-counting image sensors

CERN Document Server

Teranishi, Nobukazu; Theuwissen, Albert; Stoppa, David; Charbon, Edoardo

2017-01-01

The field of photon-counting image sensors is advancing rapidly with the development of various solid-state image sensor technologies including single photon avalanche detectors (SPADs) and deep-sub-electron read noise CMOS image sensor pixels. This foundational platform technology will enable opportunities for new imaging modalities and instrumentation for science and industry, as well as new consumer applications. Papers discussing various photon-counting image sensor technologies and selected new applications are presented in this all-invited Special Issue.

Compact lidar system using laser diode, binary continuous wave power modulation, and an avalanche photodiode-based receiver controlled by a digital signal processor

Science.gov (United States)

Ardanuy, Antoni; Comerón, Adolfo

2018-04-01

We analyze the practical limits of a lidar system based on the use of a laser diode, random binary continuous wave power modulation, and an avalanche photodiode (APD)-based photereceiver, combined with the control and computing power of the digital signal processors (DSP) currently available. The target is to design a compact portable lidar system made all in semiconductor technology, with a low-power demand and an easy configuration of the system, allowing change in some of its features through software. Unlike many prior works, we emphasize the use of APDs instead of photomultiplier tubes to detect the return signal and the application of the system to measure not only hard targets, but also medium-range aerosols and clouds. We have developed an experimental prototype to evaluate the behavior of the system under different environmental conditions. Experimental results provided by the prototype are presented and discussed.

Magnetic avalanches in manganese-acetate, "magnetic deflagration"

Science.gov (United States)

Suzuki, Yoko

Mn12-acetate, first synthesized in 1980 by Lis, is one example of a class of many molecules called single molecule magnets (SMMs) or molecular nanomagnets. These molecules have several atomic spins strongly coupled together within each molecule. They exhibit interesting quantum mechanical phenomena at low temperatures such as quantum tunneling of magnetization, which was first found with Mn12-acetate in 1996 by Friedman, et al. , and Berry phase oscillations which were measured in Fe8 (another SMM) in 1999 by Wernsdorfer, et al. In addition to possible application as memory storage and qubits for quantum computers, these systems provide the means for studies of mesoscopic physics as well as the interactions of the molecules with their environment, such as phonon, photon, nuclear spin, intermolecular dipole, and exchange interactions. Mn12-acetate has twelve Mn ions magnetically coupled in the center of the molecule yielding a giant spin of S = 10 at low temperature. It also has a large uniaxial anisotropy of 65 K. Below 3 K, magnetization curves show strong hysteresis due to the anisotropy barrier. At thesis temperatures, the spin relaxes through the barrier by quantum tunneling of magnetization, which produces regularly-spaced multiple resonant steps in the hysteresis curve. Magnetic avalanches, first detected by Paulsen et al., also occur for some samples only at low temperature, leading to a very fast single-step reversal of the full magnetization, which clearly differs from relaxation by tunneling. In this thesis, I present the results of detailed experimental studies of two aspects of magnetic avalanche phenomenon: "conditions for the triggering of avalanches" and "propagation of the avalanche front". In the first study, we find the magnetic fields at which avalanches occur are stochastically distributed in a particular range of fields. For the second study, we conducted local time-resolved measurements. The results indicate the magnetization avalanches spread

The Effect of Anisotropy on Light Extraction of Organic Light-Emitting Diodes with Photonic Crystal Structure

Directory of Open Access Journals (Sweden)

Wei Xu

2013-01-01

Full Text Available The light extraction efficiency of organic light-emitting diodes (OLED is greatly limited due to the difference in refractive indexes between materials of OLED. We fabricated OLED with photonic crystal microstructures in the interface between the glass substrate and the ITO anode. The light extraction efficiency can be improved by utilizing photonic crystals; however, the anisotropy effect of light extraction was clearly observed in experiment. To optimize the device performance, the effect of photonic crystal on both light extraction and angular distribution was investigated using finite-difference time domain (FDTD method. We simulated the photonic crystals with the structure of square lattice and triangle lattice. We analyzed the improvement of these structures in the light extraction efficiency of the OLED and the influence of arrangement, depth, period, and diameter on anisotropy. The optimized geometric parameters were provided, which will provide the theoretical support for designing the high performance OLED.

Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lai, Chun-Feng; Lu, T.C.; Wang, S.C. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Chao, C.H.; Hsueh, H.T.; Wang, J.F.T.; Yeh, W.Y.; Chi, J.Y. [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China); Kuo, H.C.

2008-07-01

Photonic crystal (PhC) light-emitting diodes (LEDs) exhibiting anisotropic light extraction have been investigated experimentally and theoretically. It is found that the anisotropic light extraction strongly depends on the lattice constant and orientation. Optical images of the anisotropy in the azimuthal direction are obtained using annular structure with triangular lattice. 6-fold symmetric light extraction patterns with varying number of petals are observed. More petals in multiple of 6 appear in the observed image with lattice constant increasing. This anisotropic behavior suggests a new means to optimize the PhC design of GaN LED for light extraction. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A study of pile-up in integrated time-correlated single photon counting systems.

Science.gov (United States)

Arlt, Jochen; Tyndall, David; Rae, Bruce R; Li, David D-U; Richardson, Justin A; Henderson, Robert K

2013-10-01

Recent demonstration of highly integrated, solid-state, time-correlated single photon counting (TCSPC) systems in CMOS technology is set to provide significant increases in performance over existing bulky, expensive hardware. Arrays of single photon single photon avalanche diode (SPAD) detectors, timing channels, and signal processing can be integrated on a single silicon chip with a degree of parallelism and computational speed that is unattainable by discrete photomultiplier tube and photon counting card solutions. New multi-channel, multi-detector TCSPC sensor architectures with greatly enhanced throughput due to minimal detector transit (dead) time or timing channel dead time are now feasible. In this paper, we study the potential for future integrated, solid-state TCSPC sensors to exceed the photon pile-up limit through analytic formula and simulation. The results are validated using a 10% fill factor SPAD array and an 8-channel, 52 ps resolution time-to-digital conversion architecture with embedded lifetime estimation. It is demonstrated that pile-up insensitive acquisition is attainable at greater than 10 times the pulse repetition rate providing over 60 dB of extended dynamic range to the TCSPC technique. Our results predict future CMOS TCSPC sensors capable of live-cell transient observations in confocal scanning microscopy, improved resolution of near-infrared optical tomography systems, and fluorescence lifetime activated cell sorting.

Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com feixe de fotons

Energy Technology Data Exchange (ETDEWEB)

Bizetto, Cesar Augusto

2013-07-01

In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley Registered-Sign 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus Registered-Sign linear accelerator), 6 and 15 MV (Novalis TX Registered-Sign ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX Registered-Sign the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

Development of new photon-counting detectors for single-molecule fluorescence microscopy

Science.gov (United States)

Michalet, X.; Colyer, R. A.; Scalia, G.; Ingargiola, A.; Lin, R.; Millaud, J. E.; Weiss, S.; Siegmund, Oswald H. W.; Tremsin, Anton S.; Vallerga, John V.; Cheng, A.; Levi, M.; Aharoni, D.; Arisaka, K.; Villa, F.; Guerrieri, F.; Panzeri, F.; Rech, I.; Gulinatti, A.; Zappa, F.; Ghioni, M.; Cova, S.

2013-01-01

Two optical configurations are commonly used in single-molecule fluorescence microscopy: point-like excitation and detection to study freely diffusing molecules, and wide field illumination and detection to study surface immobilized or slowly diffusing molecules. Both approaches have common features, but also differ in significant aspects. In particular, they use different detectors, which share some requirements but also have major technical differences. Currently, two types of detectors best fulfil the needs of each approach: single-photon-counting avalanche diodes (SPADs) for point-like detection, and electron-multiplying charge-coupled devices (EMCCDs) for wide field detection. However, there is room for improvements in both cases. The first configuration suffers from low throughput owing to the analysis of data from a single location. The second, on the other hand, is limited to relatively low frame rates and loses the benefit of single-photon-counting approaches. During the past few years, new developments in point-like and wide field detectors have started addressing some of these issues. Here, we describe our recent progresses towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. We also discuss our development of large area photon-counting cameras achieving subnanosecond resolution for fluorescence lifetime imaging applications at the single-molecule level. PMID:23267185

Approaches to single photon detection

International Nuclear Information System (INIS)

Thew, R.T.; Curtz, N.; Eraerds, P.; Walenta, N.; Gautier, J.-D.; Koller, E.; Zhang, J.; Gisin, N.; Zbinden, H.

2009-01-01

We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes (APDs); hybrid detection systems based on sum-frequency generation (SFG) and Si APDs-SFG-Si APDs; and SSPDs (superconducting single photon detectors), for telecom wavelengths; as well as SiPM (Silicon photomultiplier) detectors operating in the visible regime.

Particle and photon detection for a neutron radiative decay experiment

Energy Technology Data Exchange (ETDEWEB)

Gentile, T.R. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)], E-mail: thomas.gentile@nist.gov; Dewey, M.S.; Mumm, H.P.; Nico, J.S.; Thompson, A.K. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Chupp, T.E. [University of Michigan, Ann Arbor, MI 48109 (United States); Cooper, R.L. [University of Michigan, Ann Arbor, MI 48109 (United States)], E-mail: cooperrl@umich.edu; Fisher, B.M.; Kremsky, I.; Wietfeldt, F.E. [Tulane University, New Orleans, LA 70118 (United States); Kiriluk, K.G.; Beise, E.J. [University of Maryland, College Park, MD 20742 (United States)

2007-08-21

We present the particle and photon detection methods employed in a program to observe neutron radiative beta-decay. The experiment is located at the NG-6 beam line at the National Institute of Standards and Technology Center for Neutron Research. Electrons and protons are guided by a 4.6 T magnetic field and detected by a silicon surface barrier detector. Photons with energies between 15 and 750 keV are registered by a detector consisting of a bismuth germanate scintillator coupled to a large area avalanche photodiode. The photon detector operates at a temperature near 80 K in the bore of a superconducting magnet. We discuss CsI as an alternative scintillator, and avalanche photodiodes for direct detection of photons in the 0.1-10 keV range.

On the basic mechanism of Pixelized Photon Detectors

Energy Technology Data Exchange (ETDEWEB)

Otono, H. [Department of Physics, School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)], E-mail: otono@icepp.s.u-tokyo.ac.jp; Oide, H. [Department of Physics, School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Yamashita, S. [International Center for Elementary Particle Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Yoshioka, T. [Neutron Science Laboratory, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)

2009-10-21

A Pixelized Photon Detector (PPD) is a generic name for the semiconductor devices operated in the Geiger-mode, such as Silicon PhotoMultiplier and Multi-Pixel Photon Counter, which has high photon counting capability. While the internal mechanisms of the PPD have been intensively studied in recent years, the existing models do not include the avalanche process. We have simulated the multiplication and quenching of the avalanche process and have succeeded in reproducing the output waveform of the PPD. Furthermore our model predicts the existence of dead-time in the PPD which has never been numerically predicted. For searching the dead-time, we also have developed waveform analysis method using deconvolution which has the potential to distinguish neighboring pulses precisely. In this paper, we discuss our improved model and waveform analysis method.

Fast pulse discriminator for photon counting at high photon densities

International Nuclear Information System (INIS)

Benoit, R.; Pedrini, A.

1977-03-01

A fast tunnel diode discriminator for photon counting up to 200MHz count frequency is described. The tunnel diode is operated on its apparent I.V. characteristics displayed when the diode is driven into its oscillating region. The pulse shaper-discriminator is completely D.C. coupled in order to avoid base-line shift at high pulse rates

Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems

Science.gov (United States)

Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

2018-02-01

Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

Detection and dosimetry studies on the response of silicon diodes to an 241Am-Be source

International Nuclear Information System (INIS)

Lotfi, Y; Dizaji, H Zaki; Davani, F Abbasi

2014-01-01

Silicon diode detectors show potential for the development of an active personal dosimeter for neutron and photon radiation. Photons interact with the constituents of the diode detector and produce electrons. Fast neutrons interact with the constituents of the diode detector and converter, producing recoil nuclei and causing (n,α) and (n,p) reactions. These photon- and neutron-induced charged particles contribute to the response of diode detectors. In this work, a silicon pin diode was used as a detector to produce pulses created by photon and neutron. A polyethylene fast neutron converter was used as a recoil proton source in front of the detector. The total registered photon and neutron efficiency and the partial contributions of the efficiency, due to interactions with the diode and converter, were calculated. The results show that the efficiency of the converter-diode is a function of the incident photon and neutron energy. The optimized thicknesses of the converter for neutron detection and neutron dosimetry were found to be 1 mm and 0.1 mm respectively. The neutron records caused by the (n,α) and (n,p) reactions were negligible. The photon records were strongly dependent upon the energy and the depletion layer of the diode. The photons and neutrons efficiency of the diode-based dosimeter was calculated by the MCNPX code, and the results were in good agreement with experimental results for photons and neutrons from an 241 Am-Be source

Parameter changes in silicon IMPATT diodes for mm wavelength range exposed to gamma-radiation

International Nuclear Information System (INIS)

Shcherbina, L.V.; Torchinskaya, T.V.; Shcherbina, E.S.; Polupan, G.P.

1999-01-01

We investigated the p + -n-n + -silicon mesa-diodes fabricated using batch technique whose breakdown voltage was 19±1 V. The exposition of IMPATT diodes to 60 Co gamma-radiation was made in the 10 3 to 10 7 Gy dose range. When the gamma-irradiation dose was increased up to (5-8)*10 5 Gy, then the thermal-generation component of the reverse current was monotonously decreasing. The breakdown voltage remained the same during gamma-irradiation. It was shown experimentally that exposition of diodes to (5-8)*10 5 Gy doses of gamma-irradiation led to some drop of both the number of microplasmas in the avalanche breakdown region and the micro plasma noise level. 60 Co gamma-irradiation in the 10 3 -8*10 5 Gy dose range led also to the growth of the microwave output power P out . The decrease of the micro plasma number in the avalanche breakdown region and Pout growth may be explained if one assumes that gamma-irradiation in the 10 3 - 8*10 5 Gy dose range leads to 'healing' of structural defects in the semiconductor due to their interaction with the radiation-induced point defects. The gamma-irradiation dose increase over 8*10 5 Gy results in a storage of some radiation-induced defects in the IMPATT diode base and electrical parameters of diodes are degrading

Radiation damage effect on avalanche photodiodes

CERN Document Server

Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

1999-01-01

Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator.

Science.gov (United States)

Castellano, Fabrizio; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Vitiello, Miriam S

2016-03-15

Mode-locked comb sources operating at optical frequencies underpin applications ranging from spectroscopy and ultrafast physics, through to absolute frequency measurements and atomic clocks. Extending their operation into the terahertz frequency range would greatly benefit from the availability of compact semiconductor-based sources. However, the development of any compact mode-locked THz laser, which itself is inherently a frequency comb, has yet to be achieved without the use of an external stimulus. High-power, electrically pumped quantum cascade lasers (QCLs) have recently emerged as a promising solution, owing to their octave spanning bandwidths, the ability to achieve group-velocity dispersion compensation and the possibility of obtaining active mode-locking. Here, we propose an unprecedented compact architecture to induce both frequency and amplitude self-modulation in a THz QCL. By engineering a microwave avalanche oscillator into the laser cavity, which provides a 10 GHz self-modulation of the bias current and output power, we demonstrate multimode laser emission centered around 3 THz, with distinct multiple sidebands. The resulting microwave amplitude and frequency self-modulation of THz QCLs opens up intriguing perspectives, for engineering integrated self-mode-locked THz lasers, with impact in fields such as nano- and ultrafast photonics and optical metrology.

Parameters of a supershort avalanche electron beam generated in atmospheric-pressure air

International Nuclear Information System (INIS)

Tarasenko, V. F.

2011-01-01

Conditions under which the number of runaway electrons in atmospheric-pressure air reaches ∼5 × 10 10 are determined. Recommendations for creating runaway electron accelerators are given. Methods for measuring the parameters of a supershort avalanche electron beam and X-ray pulses from gas-filled diodes, as well as the discharge current and gap voltage, are described. A technique for determining the instant of runaway electron generation with respect to the voltage pulse is proposed. It is shown that the reduction in the gap voltage and the decrease in the beam current coincide in time. The mechanism of intense electron beam generation in gas-filled diodes is analyzed. It is confirmed experimentally that, in optimal regimes, the number of electrons generated in atmospheric-pressure air with energies T > eU m , where U m is the maximum gap voltage, is relatively small.

Parameters of a supershort avalanche electron beam generated in atmospheric-pressure air

Science.gov (United States)

Tarasenko, V. F.

2011-05-01

Conditions under which the number of runaway electrons in atmospheric-pressure air reaches ˜5 × 1010 are determined. Recommendations for creating runaway electron accelerators are given. Methods for measuring the parameters of a supershort avalanche electron beam and X-ray pulses from gas-filled diodes, as well as the discharge current and gap voltage, are described. A technique for determining the instant of runaway electron generation with respect to the voltage pulse is proposed. It is shown that the reduction in the gap voltage and the decrease in the beam current coincide in time. The mechanism of intense electron beam generation in gas-filled diodes is analyzed. It is confirmed experimentally that, in optimal regimes, the number of electrons generated in atmospheric-pressure air with energies T > eU m , where U m is the maximum gap voltage, is relatively small.

Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-03-01

Research results of hard photon technology have been summarized as a part of novel technology development highly utilizing the quantum nature of photon. Hard photon technology refers to photon beam technologies which use photon in the 0.1 to 200 nm wavelength region. Hard photon has not been used in industry due to the lack of suitable photon sources and optical devices. However, hard photon in this wavelength region is expected to bring about innovations in such areas as ultrafine processing and material synthesis due to its atom selective reaction, inner shell excitation reaction, and spatially high resolution. Then, technological themes and possibility have been surveyed. Although there are principle proposes and their verification of individual technologies for the technologies of hard photon generation, regulation and utilization, they are still far from the practical applications. For the photon source technology, the laser diode pumped driver laser technology, laser plasma photon source technology, synchrotron radiation photon source technology, and vacuum ultraviolet photon source technology are presented. For the optical device technology, the multi-layer film technology for beam mirrors and the non-spherical lens processing technology are introduced. Also are described the reduction lithography technology, hard photon excitation process, and methods of analysis and measurement. 430 refs., 165 figs., 23 tabs.

Two-photon transitions driven by a combination of diode and femtosecond lasers.

Science.gov (United States)

Moreno, Marco P; Nogueira, Giovana T; Felinto, Daniel; Vianna, Sandra S

2012-10-15

We report on the combined action of a cw diode laser and a train of ultrashort pulses when each of them drives one step of the 5S-5P-5D two-photon transition in rubidium vapor. The fluorescence from the 6P(3/2) state is detected for a fixed repetition rate of the femtosecond laser while the cw-laser frequency is scanned over the rubidium D(2) lines. This scheme allows for a velocity selective spectroscopy in a large spectral range including the 5D(3/2) and 5D(5/2) states. The results are well described in a simplified frequency domain picture, considering the interaction of each velocity group with the cw laser and a single mode of the frequency comb.

Avalanche hazard and control in Kazakhstan

Directory of Open Access Journals (Sweden)

V. P. Blagoveshchensky

2014-01-01

Full Text Available In Kazakhstan, area of 124 thousand km2 is prone to the avalanche hazard. Avalanches are released down in mountain regions situated along the eastern boundary of Kazakhstan. Systematic studies of avalanches here were started in 1958 by explorer I.S. Sosedov; later on, I.V. Seversky continued these investigations in Institute of Geography of the Kazakh Soviet Republic. Actually, he founded the Kazakh school of the avalanche studies. In 1970–1980s, five snow-avalanche stations operated in Kazakhstan: two in Il’ Alatau, two in Zhetysu Alatau, and one in the Altai. At the present time, only two stations and two snow-avalanche posts operate, and all of them are located in Il’ Alatau.Since 1951 to 2013, 75 avalanches took place in Kazakhstan, releases of them caused significant damages. For this period 172 people happened to be under avalanches, among them 86 perished. Large avalanche catastrophes causing human victims and destructions took place in Altai in 1977 and in Karatau in 1990. In spring of 1966, only in Il’ Alatau avalanches destroyed more 600 ha of mature fir (coniferous forest, and the total area of forest destroyed here by avalanches amounts to 2677 ha or 7% of the total forest area.For 48 years of the avalanche observations, there were 15 winters with increased avalanche activity in the river Almatinka basin when total volume of released snow exceeded annual mean value of 147 thousand m3. During this period, number of days with winter avalanches changed from three (in season of 1973/1974 to 28 (1986/1987, the average for a year is 16 days for a season. Winter with the total volume of snow 1300 thousand m3 occur once in 150 years. Individual avalanches with maximal volume of 350 thousand m3 happen once in 80 years.Preventive avalanche releases aimed at protection of roads and settlements are used in Kazakhstan since 1974. These precautions are taken in Il’ Alatau, Altai, and on Kalbinsky Range. Avalanches are released with the

Studies of avalanche photodiodes for scintillating fibre tracking readout

International Nuclear Information System (INIS)

Fenker, H.; Thomas, J.

1993-01-01

Avalanche Photodiodes (APDs) operating in ''Geiger Mode'' have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

Science.gov (United States)

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-03-23

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

International Nuclear Information System (INIS)

Wen Feng; Liu Deming; Huang Lirong

2010-01-01

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Wen Feng; Liu Deming; Huang Lirong, E-mail: hlr5649@163.co [Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2010-10-15

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Single-photon compressive imaging with some performance benefits over raster scanning

International Nuclear Information System (INIS)

Yu, Wen-Kai; Liu, Xue-Feng; Yao, Xu-Ri; Wang, Chao; Zhai, Guang-Jie; Zhao, Qing

2014-01-01

A single-photon imaging system based on compressed sensing has been developed to image objects under ultra-low illumination. With this system, we have successfully realized imaging at the single-photon level with a single-pixel avalanche photodiode without point-by-point raster scanning. From analysis of the signal-to-noise ratio in the measurement we find that our system has much higher sensitivity than conventional ones based on point-by-point raster scanning, while the measurement time is also reduced. - Highlights: • We design a single photon imaging system with compressed sensing. • A single point avalanche photodiode is used without raster scanning. • The Poisson shot noise in the measurement is analyzed. • The sensitivity of our system is proved to be higher than that of raster scanning

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Energy Technology Data Exchange (ETDEWEB)

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D. [Ampère Laboratory - UMR 5005, 21, Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Vergne, B. [Franco-Allemand Institute of Saint-Louis ISL, 5, Rue du Général Cassagnou, 68300 Saint-Louis (France)

2014-02-24

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

International Nuclear Information System (INIS)

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D.; Vergne, B.

2014-01-01

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption

Avalanche risk assessment in Russia

Science.gov (United States)

Komarov, Anton; Seliverstov, Yury; Sokratov, Sergey; Glazovskaya, Tatiana; Turchaniniva, Alla

2017-04-01

The avalanche prone area covers about 3 million square kilometers or 18% of total area of Russia and pose a significant problem in most mountain regions of the country. The constant growth of economic activity, especially in the North Caucasus region and therefore the increased avalanche hazard lead to the demand of the large-scale avalanche risk assessment methods development. Such methods are needed for the determination of appropriate avalanche protection measures as well as for economic assessments during all stages of spatial planning of the territory. The requirement of natural hazard risk assessments is determined by the Federal Law of Russian Federation. However, Russian Guidelines (SP 11-103-97; SP 47.13330.2012) are not clearly presented concerning avalanche risk assessment calculations. A great size of Russia territory, vast diversity of natural conditions and large variations in type and level of economic development of different regions cause significant variations in avalanche risk values. At the first stage of research the small scale avalanche risk assessment was performed in order to identify the most common patterns of risk situations and to calculate full social risk and individual risk. The full social avalanche risk for the territory of country was estimated at 91 victims. The area of territory with individual risk values lesser then 1×10(-6) covers more than 92 % of mountain areas of the country. Within these territories the safety of population can be achieved mainly by organizational activities. Approximately 7% of mountain areas have 1×10(-6) - 1×10(-4) individual risk values and require specific mitigation measures to protect people and infrastructure. Territories with individual risk values 1×10(-4) and above covers about 0,1 % of the territory and include the most severe and hazardous mountain areas. The whole specter of mitigation measures is required in order to minimize risk. The future development of such areas is not recommended

Effects of nano-structured photonic crystals on light extraction enhancement of nitride light-emitting diodes

International Nuclear Information System (INIS)

Wu, G.M.; Yen, C.C.; Chien, H.W.; Lu, H.C.; Chang, T.W.; Nee, T.E.

2011-01-01

The light extraction efficiency of an InGaN/GaN light-emitting diode (LED) can be enhanced by incorporating nano-structured photonic crystals inside the LED structure. We employed plane wave expansion (PWE) method and finite difference time domain (FDTD) method to reveal the optical confinement effects with the relevant parameters. The results showed that band-gap modulation could increase the efficiency for light extraction at the lattice constant of 200 nm and depth of 200 nm for the 468-nm LED. Focused ion beam (FIB) using Ga created the desired nano-structured patterns. The LED device micro-PL (photoluminescence) results have demonstrated that the triangular photonic crystal arrays could increase the peak illumination intensity by 58%. The peak wavelength remained unchanged. The integrated area under the illumination peak was increased by 75%. As the patterned area ratio was increased to 85%, the peak intensity enhancement was further improved to 91%, and the integrated area was achieved at 106%.

A probabilistic model for snow avalanche occurrence

Science.gov (United States)

Perona, P.; Miescher, A.; Porporato, A.

2009-04-01

Avalanche hazard forecasting is an important issue in relation to the protection of urbanized environments, ski resorts and of ski-touring alpinists. A critical point is to predict the conditions that trigger the snow mass instability determining the onset and the size of avalanches. On steep terrains the risk of avalanches is known to be related to preceding consistent snowfall events and to subsequent changes in the local climatic conditions. Regression analysis has shown that avalanche occurrence indeed correlates to the amount of snow fallen in consecutive three snowing days and to the state of the settled snow at the ground. Moreover, since different type of avalanches may occur as a result of the interactions of different factors, the process of snow avalanche formation is inherently complex and with some degree of unpredictability. For this reason, although several models assess the risk of avalanche by accounting for all the involved processes with a great detail, a high margin of uncertainty invariably remains. In this work, we explicitly describe such an unpredictable behaviour with an intrinsic noise affecting the processes leading snow instability. Eventually, this sets the basis for a minimalist stochastic model, which allows us to investigate the avalanche dynamics and its statistical properties. We employ a continuous time process with stochastic jumps (snowfalls), deterministic decay (snowmelt and compaction) and state dependent avalanche occurrence (renewals) as a minimalist model for the determination of avalanche size and related intertime occurrence. The physics leading to avalanches is simplified to the extent where only meteorological data and terrain data are necessary to estimate avalanche danger. We explore the analytical formulation of the process and the properties of the probability density function of the avalanche process variables. We also discuss what is the probabilistic link between avalanche size and preceding snowfall event and

Spatial shape of avalanches

Science.gov (United States)

Zhu, Zhaoxuan; Wiese, Kay Jörg

2017-12-01

In disordered elastic systems, driven by displacing a parabolic confining potential adiabatically slowly, all advance of the system is in bursts, termed avalanches. Avalanches have a finite extension in time, which is much smaller than the waiting time between them. Avalanches also have a finite extension ℓ in space, i.e., only a part of the interface of size ℓ moves during an avalanche. Here we study their spatial shape 〈S(x ) 〉 ℓ given ℓ , as well as its fluctuations encoded in the second cumulant 〈S2(x ) 〉 ℓ c. We establish scaling relations governing the behavior close to the boundary. We then give analytic results for the Brownian force model, in which the microscopic disorder for each degree of freedom is a random walk. Finally, we confirm these results with numerical simulations. To do this properly we elucidate the influence of discretization effects, which also confirms the assumptions entering into the scaling ansatz. This allows us to reach the scaling limit already for avalanches of moderate size. We find excellent agreement for the universal shape and its fluctuations, including all amplitudes.

The study of the phase structure of hadronic matter by searching for the deconfined quark-gluon phase transition using 2 TeV bar p-p collisions; and by searching for critical phenomena in an exclusive study of multifragmentation using 1 GeV/nucleon heavy ion collisions

International Nuclear Information System (INIS)

Scharenberg, R.; Hirsch, A.; Tincknell, M.

1993-01-01

This report discusses the Fermilab experiment E735 which is dedicated to the search for the quark-gluon plasma from proton-antiproton interactions; multifragmentation using the EOS-TPC; STAR R ampersand D; silicon avalanche diodes as direct time-of-flight detectors; and soft photons at the AGS-E855

Fully digital routing logic for single-photon avalanche diode arrays in highly efficient time-resolved imaging

Science.gov (United States)

Cominelli, Alessandro; Acconcia, Giulia; Ghioni, Massimo; Rech, Ivan

2018-03-01

Time-correlated single-photon counting (TCSPC) is a powerful optical technique, which permits recording fast luminous signals with picosecond precision. Unfortunately, given its repetitive nature, TCSPC is recognized as a relatively slow technique, especially when a large time-resolved image has to be recorded. In recent years, there has been a fast trend toward the development of TCPSC imagers. Unfortunately, present systems still suffer from a trade-off between number of channels and performance. Even worse, the overall measurement speed is still limited well below the saturation of the transfer bandwidth toward the external processor. We present a routing algorithm that enables a smart connection between a 32×32 detector array and five shared high-performance converters able to provide an overall conversion rate up to 10 Gbit/s. The proposed solution exploits a fully digital logic circuit distributed in a tree structure to limit the number and length of interconnections, which is a major issue in densely integrated circuits. The behavior of the logic has been validated by means of a field-programmable gate array, while a fully integrated prototype has been designed in 180-nm technology and analyzed by means of postlayout simulations.

Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

DEFF Research Database (Denmark)

Criado, A. R.; Acedo, P.; Carpintero, G.

2012-01-01

A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

Calibration of snow avalanche mathematical models using the data of real avalanches in the Ile (Zailiyskiy Alatau Range

Directory of Open Access Journals (Sweden)

V. P. Blagoveshchensky

2017-01-01

Full Text Available The calibration of the dry friction and turbulent friction coefficients is necessary for computer simulation of avalanches. The method of back calculation based on data on actual avalanches is used for this purpose. The article presents the results of the calibration of the Eglit’s and RAMMS models for Ile Alatau range condi‑ tions. The range is located in Kazakhstan. The data on six avalanches in the same avalanche site were used. Five avalanches were dry, and one avalanche was wet. Avalanches volume varied from 2000 to 12000  m3. Maximum speed avalanches were between 15 and 30  m/s, the flow height  – from 3 to 10  m. Series of back calculations with different values of the friction coefficients was made to obtain the calibrated coeffi‑ cients. The calibrated coefficients were chosen under condition of the best fit with real avalanches. The cal‑ ibrated coefficients were following. For the Eglit’s model for dry avalanches of the volume 2000–5000  m3 μ = 0.46÷0.48, k = 0.005–0.006, and the volume 8000–12000 m3 μ = 0.38÷0.42, k = 0.002÷0.003. For RAMMS model for dry avalanches of the volume of 2000–5000 m3 μ (dry friction coefficient = 0.35÷0.4, ξ (viscous friction coefficient = 1500÷2000 m/s2, and the volume 8,000–12,000 m3 μ = 0.3÷0.35, ξ = 2000÷3000 m/s2. For wet avalanches of the volume 12,000 m3 μ = 0.35, ξ = 1500 m/s2. The work on the calibration will be con‑ tinued to obtain the friction coefficients for the Eglit’s and RAMMS models. The additional data on real ava‑ lanches will be needed for this purpose.

Avalanches and Criticality in Driven Magnetic Skyrmions

Science.gov (United States)

Díaz, S. A.; Reichhardt, C.; Arovas, D. P.; Saxena, A.; Reichhardt, C. J. O.

2018-03-01

We show using numerical simulations that slowly driven Skyrmions interacting with random pinning move via correlated jumps or avalanches. The avalanches exhibit power-law distributions in their duration and size, and the average avalanche shape for different avalanche durations can be scaled to a universal function, in agreement with theoretical predictions for systems in a nonequilibrium critical state. A distinctive feature of Skyrmions is the influence of the nondissipative Magnus term. When we increase the ratio of the Magnus term to the damping term, a change in the universality class of the behavior occurs, the average avalanche shape becomes increasingly asymmetric, and individual avalanches exhibit motion in the direction perpendicular to their own density gradient.

Nano-multiplication region avalanche photodiodes and arrays

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2011-01-01

An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

Avalanches in insulating gases

International Nuclear Information System (INIS)

Verhaart, H.F.A.

1982-01-01

Avalanches of charged particles in gases are often studied with the ''electrical method'', the measurement of the waveform of the current in the external circuit. In this thesis a substantial improvement of the time resolution of the measuring setup, to be used for the electrical method, is reported. The avalanche is started by an N 2 -laser with a pulse duration of only 0.6 ns. With this laser it is possible to release a high number of primary electrons (some 10 8 ) which makes it possible to obtain sizeable signals, even at low E/p values. With the setup it is possible to analyze current waveforms with a time resolution down to 1.4 ns, determined by both the laser and the measuring system. Furthermore it is possible to distinguish between the current caused by the electrons and the current caused by the ions in the avalanche and to monitor these currents simultaneously. Avalanche currents are measured in N 2 , CO 2 , O 2 , H 2 O, air of varying humidity, SF 6 and SF 6 /N 2 mixtures. Depending on the nature of the gas and the experimental conditions, processes as diffusion, ionization, attachment, detachment, conversion and secondary emission are observed. Values of parameters with which these processes can be described, are derived from an analysis of the current waveforms. For this analysis already published theories and new theories described in this thesis are used. The drift velocity of both the electrons and the ions could be easily determined from measured avalanche currents. Special attention is paid to avalanches in air becasue of the practical importance of air insulation. (Auth.)

Organic Light Emitting Diodes with Opal Photonic Crystal Layer and Carbon Nanotube Anode

Science.gov (United States)

Ovalle Robles, Raquel; Del Rocio Nava, Maria; Williams, Christopher; Zhang, Mei; Fang, Shaoli; Lee, Sergey; Baughman, Ray; Zakhidov, Anvar

2007-03-01

We report electroluminescence intensity and spectral changes in light emission from organic light emitting diode (OLEDs) structures, which have thin transparent films of opal photonic crystal (PC). The anode in such PC-OLED is laminated on opal layer from free standing optically transparent multiwall carbon nanotubes (T-CNT) sheets made by dry spinning from CVD grown forests. Silica and polystyrene opal films were grown on glass substrates by vertical sedimentation in colloids in thermal baths and the particle size of opal spheres ranges from 300 nm to 450 nm. The use of T-CNTs, (coated by PEDOT-PSS to avoid shorting) as hole injector, allows to eliminate the use of vacuum deposition of metals and permits to achieve tunneling hole injection regime from CNT tips into Alq^3 emission layer

Improving the counting efficiency in time-correlated single photon counting experiments by dead-time optimization

Energy Technology Data Exchange (ETDEWEB)

Peronio, P.; Acconcia, G.; Rech, I.; Ghioni, M. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2015-11-15

Time-Correlated Single Photon Counting (TCSPC) has been long recognized as the most sensitive method for fluorescence lifetime measurements, but often requiring “long” data acquisition times. This drawback is related to the limited counting capability of the TCSPC technique, due to pile-up and counting loss effects. In recent years, multi-module TCSPC systems have been introduced to overcome this issue. Splitting the light into several detectors connected to independent TCSPC modules proportionally increases the counting capability. Of course, multi-module operation also increases the system cost and can cause space and power supply problems. In this paper, we propose an alternative approach based on a new detector and processing electronics designed to reduce the overall system dead time, thus enabling efficient photon collection at high excitation rate. We present a fast active quenching circuit for single-photon avalanche diodes which features a minimum dead time of 12.4 ns. We also introduce a new Time-to-Amplitude Converter (TAC) able to attain extra-short dead time thanks to the combination of a scalable array of monolithically integrated TACs and a sequential router. The fast TAC (F-TAC) makes it possible to operate the system towards the upper limit of detector count rate capability (∼80 Mcps) with reduced pile-up losses, addressing one of the historic criticisms of TCSPC. Preliminary measurements on the F-TAC are presented and discussed.

Photon counting altimeter and lidar for air and spaceborne applications

Science.gov (United States)

Vacek, Michael; Michalek, Vojtech; Peca, Marek; Prochazka, Ivan; Blazej, Josef; Kodet, Jan

2011-06-01

We are presenting the concept and preliminary design of modular multipurpose device for space segment: single photon counting laser altimeter, atmospheric lidar, laser transponder and one way laser ranging receiver. For all the mentioned purposes, the same compact configuration of the device is appropriate. Overall estimated device weight should not exceed 5 kg with the power consumption below 10 W. The device will consists of three main parts, namely, receiver, transmitter and control and processing unit. As a transmitter a commercial solid state laser at 532 nm wavelength with 10 mW power will be used. The transmitter optics will have a diameter at most of 50 mm. The laser pulse width will be of hundreds of picoseconds order. For the laser altimeter and atmospheric lidar application, the repetition rate of 10 kHz is planned in order to obtain sufficient number of data for a distance value computing. The receiver device will be composed of active quenched Single Photon Avalanche Diode module, tiny optics, and narrow-band optical filter. The core part of the control and processing unit including high precision timing unit is implemented using single FPGA chip. The preliminary device concept includes considerations on energy balance, and statistical algorithms to meet all the mentioned purposes. Recently, the bread board version of the device is under construction in our labs. The concept, construction, and timing results will be presented.

Laser annealing heals radiation damage in avalanche photodiodes

Energy Technology Data Exchange (ETDEWEB)

Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

2017-12-15

Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

Best-Practice Criteria for Practical Security of Self-Differencing Avalanche Photodiode Detectors in Quantum Key Distribution

Science.gov (United States)

Koehler-Sidki, A.; Dynes, J. F.; Lucamarini, M.; Roberts, G. L.; Sharpe, A. W.; Yuan, Z. L.; Shields, A. J.

2018-04-01

Fast-gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high-bit-rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system, or even an entire QKD network. We investigate the behavior of a gigahertz-gated, self-differencing (In,Ga)As APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modeling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche probability and/or strengthening the capacitive response. Based on this finding, we propose a set of best-practice criteria for designing and operating fast-gated APD detectors to ensure their practical security in QKD.

Coherence properties of spontaneous parametric down-conversion pumped by a multi-mode cw diode laser.

Science.gov (United States)

Kwon, Osung; Ra, Young-Sik; Kim, Yoon-Ho

2009-07-20

Coherence properties of the photon pair generated via spontaneous parametric down-conversion pumped by a multi-mode cw diode laser are studied with a Mach-Zehnder interferometer. Each photon of the pair enters a different input port of the interferometer and the biphoton coherence properties are studied with a two-photon detector placed at one output port. When the photon pair simultaneously enters the interferometer, periodic recurrence of the biphoton de Broglie wave packet is observed, closely resembling the coherence properties of the pump diode laser. With non-zero delays between the photons at the input ports, biphoton interference exhibits the same periodic recurrence but the wave packet shapes are shown to be dependent on both the input delay as well as the interferometer delay. These properties could be useful for building engineered entangled photon sources based on diode laser-pumped spontaneous parametric down-conversion.

Fabrication of Photonic Crystal Structures on Flexible Organic Light-Emitting Diodes by Using Nano-Imprint and PDMS Mold

Directory of Open Access Journals (Sweden)

Ho Ting-Lin

2016-01-01

Full Text Available In this paper, nanoimprint lithography was used to create a photonic crystals structure film in organic light-emitting diode (OLED component, and then compare the efficiency of components whether with nanostructure or not. By using two different kinds of mold, such as silicon mold and PDMS mold, the nano structures in PMMA (molecular weight of 350K were fabricated. Nanostructures in period of 403.53nm with silicon mold and nano structures in period of 385.64nm with PDMS mold as photonic crystal films were fabricated and were integrated into OLED. In experimental results, the OLED without photonic crystal films (with packing behaves 193.3cd/m2 for luminous intensity, 3.481cd/A for lightening efficiency (ηL and 0.781 lm/W for lightening power (ηP where V is 14V and I is 5.5537mA; the OLED with photonic crystal films (with packing behaves 241.6cd/m2 for luminous intensity, 4.173cd/A for lightening efficiency (ηL and 0.936 lm/W for lightening power (ηP where voltage of 14V and current (I of 5.7891mA, which shows that the latter perform is well.

CMOS-based avalanche photodiodes for direct particle detection

International Nuclear Information System (INIS)

Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

2007-01-01

Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

KAUST Repository

Shen, Chao

2017-02-28

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

KAUST Repository

Shen, Chao; Lee, Changmin; Stegenburgs, Edgars; Lerma, Jorge Holguin; Ng, Tien Khee; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

Energy and dissipated work in snow avalanches

Science.gov (United States)

Bartelt, P.; Buser, O.

2004-12-01

Using the results of large scale avalanche experiments at the Swiss Vallée de la Sionne test site, the energy balance of several snow avalanches is determined. Avalanches convert approximately one-seventh of their potential energy into kinetic energy. The total potential energy depends strongly on the entrained snowcover, indicating that entrainment processes cannot be ignored when predicting terminal velocities and runout distances. We find energy dissipation rates on the order of 1 GW. Fluidization of the fracture slab can be identified in the experiments as an increase in dissipation rate, thereby explaining the initial and rapid acceleration of avalanches after release. Interestingly, the dissipation rates appear to be constant along the track, although large fluctuations in internal velocity exist. Thus, we can demonstrate within the context of non-equilibrium thermodynamics that -- in space -- granular snow avalanches are irreversible, dissipative systems that minimize entropy production because they appear to reach a steady-state non-equilibrium. A thermodynamic analysis reveals that fluctuations in velocity depend on the roughness of the flow surface and viscosity of the granular system. We speculate that this property explains the transition from flowing avalanches to powder avalanches.

Geiger mode avalanche photodiodes for microarray systems

Science.gov (United States)

Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan

2002-06-01

New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.

A 32-channel photon counting module with embedded auto/cross-correlators for real-time parallel fluorescence correlation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Gong, S.; Labanca, I.; Rech, I.; Ghioni, M. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2014-10-15

Fluorescence correlation spectroscopy (FCS) is a well-established technique to study binding interactions or the diffusion of fluorescently labeled biomolecules in vitro and in vivo. Fast FCS experiments require parallel data acquisition and analysis which can be achieved by exploiting a multi-channel Single Photon Avalanche Diode (SPAD) array and a corresponding multi-input correlator. This paper reports a 32-channel FPGA based correlator able to perform 32 auto/cross-correlations simultaneously over a lag-time ranging from 10 ns up to 150 ms. The correlator is included in a 32 × 1 SPAD array module, providing a compact and flexible instrument for high throughput FCS experiments. However, some inherent features of SPAD arrays, namely afterpulsing and optical crosstalk effects, may introduce distortions in the measurement of auto- and cross-correlation functions. We investigated these limitations to assess their impact on the module and evaluate possible workarounds.

A 32-channel photon counting module with embedded auto/cross-correlators for real-time parallel fluorescence correlation spectroscopy

International Nuclear Information System (INIS)

Gong, S.; Labanca, I.; Rech, I.; Ghioni, M.

2014-01-01

Fluorescence correlation spectroscopy (FCS) is a well-established technique to study binding interactions or the diffusion of fluorescently labeled biomolecules in vitro and in vivo. Fast FCS experiments require parallel data acquisition and analysis which can be achieved by exploiting a multi-channel Single Photon Avalanche Diode (SPAD) array and a corresponding multi-input correlator. This paper reports a 32-channel FPGA based correlator able to perform 32 auto/cross-correlations simultaneously over a lag-time ranging from 10 ns up to 150 ms. The correlator is included in a 32 × 1 SPAD array module, providing a compact and flexible instrument for high throughput FCS experiments. However, some inherent features of SPAD arrays, namely afterpulsing and optical crosstalk effects, may introduce distortions in the measurement of auto- and cross-correlation functions. We investigated these limitations to assess their impact on the module and evaluate possible workarounds

Femtosecond Laser--Pumped Source of Entangled Photons for Quantum Cryptography Applications

International Nuclear Information System (INIS)

Pan, D.; Donaldson, W.; Sobolewski, R.

2007-01-01

We present an experimental setup for generation of entangled-photon pairs via spontaneous parametric down-conversion, based on the femtosecond-pulsed laser. Our entangled-photon source utilizes a 76-MHz-repetition-rate, 100-fs-pulse-width, mode-locked, ultrafast femtosecond laser, which can produce, on average, more photon pairs than a cw laser of an equal pump power. The resulting entangled pairs are counted by a pair of high-quantum-efficiency, single-photon, silicon avalanche photodiodes. Our apparatus s intended as an efficient source/receiver system for the quantum communications and quantum cryptography applications

Current transport mechanisms in mercury cadmium telluride diode

Energy Technology Data Exchange (ETDEWEB)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

2016-08-28

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

Science.gov (United States)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of direction and direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for direction 4H-SiC IMPATT compared to direction. However, the quality factor Q for the direction 4H-SiC IMPATT diode is lower than that of direction, which implies that the direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with direction 4H-SiC IMPATT diode.

An excess noise measurement system for weak responsivity avalanche photodiodes

Science.gov (United States)

Qiao, Liang; Dimler, Simon J.; Baharuddin, Aina N. A. P.; Green, James E.; David, John P. R.

2018-06-01

A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure the excess noise power of devices, even when the un-multiplied photocurrent is low (~10 nA). This is more than one order of magnitude better than previously reported systems and represents a significantly better noise signal to noise ratio. This improvement in performance has been achieved by increasing the value of the feedback resistor and reducing the op-amp bandwidth. The ability to characterise APD performance with such low photocurrents enables the use of low power light sources such as light emitting diode rather than lasers to investigate the APD noise performance.

Imaging findings of avalanche victims

Energy Technology Data Exchange (ETDEWEB)

Grosse, Alexandra B.; Grosse, Claudia A.; Anderson, Suzanne [University Hospital of Berne, Inselspital, Department of Diagnostic, Pediatric and Interventional Radiology, Berne (Switzerland); Steinbach, Lynne S. [University of California San Francisco, Department of Radiology, San Francisco, CA (United States); Zimmermann, Heinz [University Hospital of Berne, Inselspital, Department of Trauma and Emergency Medicine, Berne (Switzerland)

2007-06-15

Skiing and hiking outside the boundaries remains an attractive wilderness activity despite the danger of avalanches. Avalanches occur on a relatively frequent basis and may be devastating. Musculoskeletal radiologists should be acquainted with these injuries. Fourteen avalanche victims (11 men and 3 women; age range 17-59 years, mean age 37.4 years) were air transported to a high-grade trauma centre over a period of 2 years. Radiographs, CT and MR images were prospectively evaluated by two observers in consensus. Musculoskeletal findings (61%) were more frequent than extraskeletal findings (39%). Fractures were most commonly seen (36.6%), involving the spine (14.6%) more frequently than the extremities (9.8%). Blunt abdominal and thoracic trauma were the most frequent extraskeletal findings. A wide spectrum of injuries can be found in avalanche victims, ranging from extremity fractures to massive polytrauma. Asphyxia remains the main cause of death along with hypoxic brain injury and hypothermia. (orig.)

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

Science.gov (United States)

Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

Ultra-high optical responsivity of semiconducting asymmetric nano-channel diodes for photon detection

Science.gov (United States)

Akbas, Y.; Plecenik, T.; Durina, P.; Plecenik, A.; Jukna, A.; Wicks, G.; Sobolewski, Roman

2017-05-01

The asymmetric nano-channel diode (ANCD) is the 2-dimensional electron gas (2DEG) semiconductor nanodevice that, unlike a conventional diode, relies on the device nanostructure and field-controlled transport in a ballistic nanometerwidth channel instead of barriers to develop its asymmetric, diode-like current-voltage (I-V) characteristics. We focus on ANCD optoelectronic properties, and demonstrate that the devices can act as very sensitive, single-photon-level, visiblelight photodetectors. Our test structures consist of 2-μm-long and 230-nm-wide channels and were fabricated using electron-beam lithography on a GaAs/AlGaAs heterostructure with a 2DEG layer, followed by reactive ion etching. The I-V curves were collected by measuring the transport current under the voltage-source biasing condition, both in the dark and under light illumination. The experiments were conducted inside a cryostat, in a temperature range from 300 K to 78 K. As an optical excitation, we used a 800-nm-wavelength, generated by a commercial Ti:sapphire laser operated either at a quasi-continuous-wave mode or as a source of 100-fs-wide pulses. The impact of the light illumination was very clear, and at low temperatures we observed a significant photocurrent Iph 0.25 μA at temperature 78 K for the incident optical power as low as 1 nW, with a limited dark-current background. The magnitude of the device optical responsivity increased linearly with the decrease of the optical power, reaching for 1-nW optical excitation the value as high as 400 A/W at room temperature and >800 A/W at 78K. The physics of the photoresponse gain mechanism in the ANCD arises from a vast disparity between the sub-picosecond transit time of photo-excited electrons travelling in the 2DEG nanochannel and the up to microsecond lifetime of photo-excited holes pushed towards the device substrate.

Towards THz integrated photonics

OpenAIRE

Hübers, Heinz-Wilhelm

2010-01-01

The demonstration of an integrated terahertz transceiver featuring a quantum cascade laser and a Schottky diode mixer promises new applications for compact and convenient terahertz photonic instrumentation.

On the high gain operation of low-pressure microdot gas avalanche chambers

International Nuclear Information System (INIS)

Breskin, A.

1997-01-01

Microdot avalanche chambers (MDOT) equipped with thin semitransparent Cr photocathodes, were characterized with UV photons at low gas pressure. Gains superior to 10 4 were reached with gas multiplication at the dots. In a mode where preamplification in the gas volume precedes the additional dot multiplication, gains superior to 10 6 were measured at 30-60 torr of propane. The fast amplification mechanism results in narrow high amplitude pulses with 2-3 ns rise time, visible with no further electronic amplification means. We present here our preliminary results and briefly discuss potential applications. (orig.)

Measuring neuronal avalanches in disordered systems with absorbing states

Science.gov (United States)

Girardi-Schappo, M.; Tragtenberg, M. H. R.

2018-04-01

Power-law-shaped avalanche-size distributions are widely used to probe for critical behavior in many different systems, particularly in neural networks. The definition of avalanche is ambiguous. Usually, theoretical avalanches are defined as the activity between a stimulus and the relaxation to an inactive absorbing state. On the other hand, experimental neuronal avalanches are defined by the activity between consecutive silent states. We claim that the latter definition may be extended to some theoretical models to characterize their power-law avalanches and critical behavior. We study a system in which the separation of driving and relaxation time scales emerges from its structure. We apply both definitions of avalanche to our model. Both yield power-law-distributed avalanches that scale with system size in the critical point as expected. Nevertheless, we find restricted power-law-distributed avalanches outside of the critical region within the experimental procedure, which is not expected by the standard theoretical definition. We remark that these results are dependent on the model details.

Spatial determination of magnetic avalanche ignition points

International Nuclear Information System (INIS)

Jaafar, Reem; McHugh, S.; Suzuki, Yoko; Sarachik, M.P.; Myasoedov, Y.; Zeldov, E.; Shtrikman, H.; Bagai, R.; Christou, G.

2008-01-01

Using time-resolved measurements of local magnetization in the molecular magnet Mn 12 -ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends

Spatial determination of magnetic avalanche ignition points

Energy Technology Data Exchange (ETDEWEB)

Jaafar, Reem; McHugh, S.; Suzuki, Yoko [Physics Department, City College of the City University of New York, New York, NY 10031 (United States); Sarachik, M.P. [Physics Department, City College of the City University of New York, New York, NY 10031 (United States)], E-mail: sarachik@sci.ccny.cuny.edu; Myasoedov, Y.; Zeldov, E.; Shtrikman, H. [Department Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100 (Israel); Bagai, R.; Christou, G. [Department of Chemistry, University of Florida, Gainesville, FL 32611 (United States)

2008-03-15

Using time-resolved measurements of local magnetization in the molecular magnet Mn{sub 12}-ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends.

Basic study on the development of low exposure CT with Frisch grid avalanche diode. JAERI's nuclear research promotion program, H13-011 (Contract research)

International Nuclear Information System (INIS)

Katagiri, Masaki; Onabe, Hideaki

2005-03-01

For the development of low exposure CT, we have conducted a basic study on Frisch grid avalanche diode detector to realize a high efficiency, high counting rate X-ray detector. First, we fabricated Frisch grid Si detector made of one crystal and studied their features. For the development of X-ray detector with higher performance, bonding semiconductor wafers, including different semiconductors, such as Si and CdTe, is necessary. We have bonded Si wafers by surface activation method and studied on the electric performance of bonded Si wafers. The current-voltage curve of bonded pn Si wafers showed rectifying characteristics, although Si pn junctions are made by diffusion method, generally. Second, we proposed a low dose exposure X-ray transmission method using filtered X-ray and energy subtraction method. The dose exposure with this method is estimated as low as 30% of that of using white X-rays. If we compare the dose exposure of conventional current measurement method, we would conclude further advantage of this method. With the combination of low dose exposure X-ray transmission method and the Frisch grid detector, high performance X-ray transmission method and low exposure CT system will be developed in future. (author)

Simulation of RPC performance for 511 keV photon detection

CERN Document Server

Lippmann, C; Riegler, W

2009-01-01

Measurements of the time resolution of timing Resistive Plate Chambers (RPCs) reveal some differences when comparing the results for 511 keV photons and for particle beams. The subject is of interest, since timing RPCs are currently considered for Positron Emission Tomography (PET), where the sensitivity of the system depends largely on the time resolution of the detector. In this publication we discuss possible explanations, in particular the statistical fluctuations of the deposited charge and the Compton electron flight time distributions. Moreover, we rediscuss the reduction of the Townsend coefficient due to the space charge effect inside the avalanches as a function of the avalanche size. We shall see that the dependence assumed by different analytic models differs significantly from what is predicted by detailed Monte Carlo avalanche simulations.

Real time avalanche detection for high risk areas.

Science.gov (United States)

2014-12-01

Avalanches routinely occur on State Highway 21 (SH21) between Lowman and Stanley, Idaho each winter. The avalanches pose : a threat to the safety of maintenance workers and the traveling public. A real-time avalanche detection system will allow the :...

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Science.gov (United States)

Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

2016-01-01

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

Assessing the importance of terrain parameters on glide avalanche release

Science.gov (United States)

Peitzsch, E.; Hendrikx, J.; Fagre, D. B.

2013-12-01

Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

Assessing the importance of terrain parameters on glide avalanche release

Science.gov (United States)

Peitzsch, Erich H.; Hendrikx, Jordy; Fagre, Daniel B.

2014-01-01

Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

Application of AXUV diode detectors at ASDEX Upgrade

Science.gov (United States)

Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

2014-03-01

In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

Application of AXUV diode detectors at ASDEX Upgrade

International Nuclear Information System (INIS)

Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

2014-01-01

In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales

Flexible manufacturing for photonics device assembly

International Nuclear Information System (INIS)

Lu, Shin-yee; Young, K.D.

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and optoelectronics (OE) multi-chip modules usually requires the placement of micron-size devices, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (pigtailing). This is a labor-intensive process. Studies done by the OE industry have shown that 95% of the cost of a pigtailed photonic device is attributed to the current practice of manual alignment and bonding techniques. At Lawrence Livermore National Laboratory, the authors are working to reduce the cost of packaging OE devices, through the use of automation

Multi-Periodic Photonic Crystal Out-Coupling Layers for Flexible OLEDs

DEFF Research Database (Denmark)

Kluge, Christian; Pradana, Arfat; Adam, Jost

2014-01-01

Waveguide mode extraction with multi-periodic photonic crystals is studied in experiment and finite-difference time-domain (FDTD) simulations. Flexible nanostructured organic light-emitting diodes (OLEDs) are fabricated by UV nanoimprint lithography.......Waveguide mode extraction with multi-periodic photonic crystals is studied in experiment and finite-difference time-domain (FDTD) simulations. Flexible nanostructured organic light-emitting diodes (OLEDs) are fabricated by UV nanoimprint lithography....

Stopping atoms with diode lasers

International Nuclear Information System (INIS)

Watts, R.N.; Wieman, C.E.

1986-01-01

The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

Generalised small signal analysis of a DAR /Double Avalanche Region/ IMPATT diode

Science.gov (United States)

Datta, D. N.; Pal, B. B.

1982-06-01

A generalized small signal analysis of a DAR IMPATT diode is carried out using recent values of ionization rates and saturated drift velocities of electrons and holes for Si and GaAs taking both the drift and the diffusion of charge carriers into account. The results show similar discrete negative conductance frequency bands separated by positive conductance frequency bands for an asymmetrical structure as in the ideal case (Som et al., 1974), establishing that the harmonically related frequencies can be avoided in the Si DAR IMPATT diode. In contrast to the ideal case, however, the symmetrical DAR IMPATT here also exhibits finite negative conductance. The GaAs DAR IMPATT shows variations of negative conductance that are similar to those in Si at high frequencies (in the mm wave range); at the low frequency side (less than 1 GHz), however, the IMPATT gives uniform negative conductances unlike Si where the negative conductance comes only at higher frequencies. Consideration is given in the calculations to thin depletion layers (0.8, 1, and 2 microns) to show the usefulness of the device in the mm wave range.

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Directory of Open Access Journals (Sweden)

V. G. Vorobiov

2015-10-01

Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

Rock-avalanche dynamics revealed by large-scale field mapping and seismic signals at a highly mobile avalanche in the West Salt Creek valley, western Colorado

Science.gov (United States)

Coe, Jeffrey A.; Baum, Rex L.; Allstadt, Kate E.; Kochevar, Bernard; Schmitt, Robert G.; Morgan, Matthew L.; White, Jonathan L.; Stratton, Benjamin T.; Hayashi, Timothy A.; Kean, Jason W.

2016-01-01

On 25 May 2014, a rain-on-snow–induced rock avalanche occurred in the West Salt Creek valley on the northern flank of Grand Mesa in western Colorado (United States). The avalanche mobilized from a preexisting rock slide in the Green River Formation and traveled 4.6 km down the confined valley, killing three people. The avalanche was rare for the contiguous United States because of its large size (54.5 Mm3) and high mobility (height/length = 0.14). To understand the avalanche failure sequence, mechanisms, and mobility, we conducted a forensic analysis using large-scale (1:1000) structural mapping and seismic data. We used high-resolution, unmanned aircraft system imagery as a base for field mapping, and analyzed seismic data from 22 broadband stations (distances earth and tracked these forces using curves in the avalanche path. Our results revealed that the rock avalanche was a cascade of landslide events, rather than a single massive failure. The sequence began with an early morning landslide/debris flow that started ∼10 h before the main avalanche. The main avalanche lasted ∼3.5 min and traveled at average velocities ranging from 15 to 36 m/s. For at least two hours after the avalanche ceased movement, a central, hummock-rich core continued to move slowly. Since 25 May 2014, numerous shallow landslides, rock slides, and rock falls have created new structures and modified avalanche topography. Mobility of the main avalanche and central core was likely enhanced by valley floor material that liquefied from undrained loading by the overriding avalanche. Although the base was likely at least partially liquefied, our mapping indicates that the overriding avalanche internally deformed predominantly by sliding along discrete shear surfaces in material that was nearly dry and had substantial frictional strength. These results indicate that the West Salt Creek avalanche, and probably other long-traveled avalanches, could be modeled as two layers: a thin, liquefied

In vivo time-gated diffuse correlation spectroscopy at quasi-null source-detector separation.

Science.gov (United States)

Pagliazzi, M; Sekar, S Konugolu Venkata; Di Sieno, L; Colombo, L; Durduran, T; Contini, D; Torricelli, A; Pifferi, A; Mora, A Dalla

2018-06-01

We demonstrate time domain diffuse correlation spectroscopy at quasi-null source-detector separation by using a fast time-gated single-photon avalanche diode without the need of time-tagging electronics. This approach allows for increased photon collection, simplified real-time instrumentation, and reduced probe dimensions. Depth discriminating, quasi-null distance measurement of blood flow in a human subject is presented. We envision the miniaturization and integration of matrices of optical sensors of increased spatial resolution and the enhancement of the contrast of local blood flow changes.

Time-bin entangled photon pairs from spontaneous parametric down-conversion pumped by a cw multi-mode diode laser.

Science.gov (United States)

Kwon, Osung; Park, Kwang-Kyoon; Ra, Young-Sik; Kim, Yong-Su; Kim, Yoon-Ho

2013-10-21

Generation of time-bin entangled photon pairs requires the use of the Franson interferometer which consists of two spatially separated unbalanced Mach-Zehnder interferometers through which the signal and idler photons from spontaneous parametric down-conversion (SPDC) are made to transmit individually. There have been two SPDC pumping regimes where the scheme works: the narrowband regime and the double-pulse regime. In the narrowband regime, the SPDC process is pumped by a narrowband cw laser with the coherence length much longer than the path length difference of the Franson interferometer. In the double-pulse regime, the longitudinal separation between the pulse pair is made equal to the path length difference of the Franson interferometer. In this paper, we propose another regime by which the generation of time-bin entanglement is possible and demonstrate the scheme experimentally. In our scheme, differently from the previous approaches, the SPDC process is pumped by a cw multi-mode (i.e., short coherence length) laser and makes use of the coherence revival property of such a laser. The high-visibility two-photon Franson interference demonstrates clearly that high-quality time-bin entanglement source can be developed using inexpensive cw multi-mode diode lasers for various quantum communication applications.

Fabrication study of GaAs mesa diodes for X-ray detection

OpenAIRE

Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.

2014-01-01

A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...

Studies of a hybrid avalanche photo-detector in magnetic field

Energy Technology Data Exchange (ETDEWEB)

Šantelj, L., E-mail: luka.santelj@kek.jp [High Energy Accelerator Research Organization (KEK) (Japan); Adachi, I. [High Energy Accelerator Research Organization (KEK) (Japan); Sokendai University (Japan); Hataya, K. [Tokyo Metropolitan University (Japan); Iori, S. [Toho University (Japan); Iwata, S.; Kakuno, H. [Tokyo Metropolitan University (Japan); Kataura, R. [Niigata University (Japan); Kawai, H. [Chiba University (Japan); Kindo, H. [Sokendai University (Japan); Korpar, S. [University of Maribor (Slovenia); Jožef Stefan Institute, Ljubljana (Slovenia); Križan, P. [Jožef Stefan Institute, Ljubljana (Slovenia); University of Ljubljana (Slovenia); Mrvar, M. [Jožef Stefan Institute, Ljubljana (Slovenia); Nath, K. [Indian Institute of Technology Guwahati (India); Nishida, S. [High Energy Accelerator Research Organization (KEK) (Japan); Sokendai University (Japan); Ogawa, S. [Niigata University (Japan); Pestotnik, R.; Stanovnik, A.; Seljak, A. [Jožef Stefan Institute, Ljubljana (Slovenia); Sumiyoshi, T. [Tokyo University of Science, Tokyo (Japan); Tabata, M. [Chiba University (Japan); and others

2017-02-11

For the Belle II spectrometer a proximity focusing RICH counter with an aerogel radiator (ARICH) will be employed as a PID system in the forward endcap region of the spectrometer. The main challenge was the development of a reliable multichannel sensor for single photons that operates in the high magnetic field of the spectrometer (1.5 T) and withstands the radiation levels expected at the experiment. A 144-channel Hybrid Avalanche Photo-Detector (HAPD) was developed with Hamamatsu Photonics K.K. and the mass production of ∼480 HAPDs was completed recently. While our first tests of HAPD performance in the magnetic field (before mass production) showed no issues, we lately observed a presence of very large signal pulses (∼5000× single photon signal), generated internally within about 20% of HAPDs, while operating in the magnetic field. The rate of these pulses varies from sample to sample. These pulses impact the HAPD performance in two ways: they introduce periods of dead time and, in some cases, damage to the front-end electronics was observed. Here we present conditions under which such large pulses are generated, their properties and impact on HAPD performance, and discuss possible mechanism of their origin.

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin

2016-09-06

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

Characterizing the nature and variability of avalanche hazard in western Canada

Science.gov (United States)

Shandro, Bret; Haegeli, Pascal

2018-04-01

The snow and avalanche climate types maritime, continental and transitional are well established and have been used extensively to characterize the general nature of avalanche hazard at a location, study inter-seasonal and large-scale spatial variabilities and provide context for the design of avalanche safety operations. While researchers and practitioners have an experience-based understanding of the avalanche hazard associated with the three climate types, no studies have described the hazard character of an avalanche climate in detail. Since the 2009/2010 winter, the consistent use of Statham et al. (2017) conceptual model of avalanche hazard in public avalanche bulletins in Canada has created a new quantitative record of avalanche hazard that offers novel opportunities for addressing this knowledge gap. We identified typical daily avalanche hazard situations using self-organizing maps (SOMs) and then calculated seasonal prevalence values of these situations. This approach produces a concise characterization that is conducive to statistical analyses, but still provides a comprehensive picture that is informative for avalanche risk management due to its link to avalanche problem types. Hazard situation prevalence values for individual seasons, elevations bands and forecast regions provide unprecedented insight into the inter-seasonal and spatial variability of avalanche hazard in western Canada.

Visible light photon counters (VLPCs) for high rate tracking medical imaging and particle astrophysics

International Nuclear Information System (INIS)

Atac, M.

1998-02-01

This paper is on the operation principles of the Visible Light Photon Counters (VLPCs), application to high luminosity-high multiplicity tracking for High Energy Charged Particle Physics, and application to Medical Imaging and Particle Astrophysics. The VLPCs as Solid State Photomultipliers (SSPMS) with high quantum efficiency can detect down to single photons very efficiently with excellent time resolution and high avalanche gains

Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

Science.gov (United States)

Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

2016-04-01

The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

Energy Technology Data Exchange (ETDEWEB)

Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I. [Siberian Branch, Russian Academy of Sciences, Institute of High Current Electronics (Russian Federation)

2016-04-15

The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Entangled Light Emission From a Diode

International Nuclear Information System (INIS)

Stevenson, R. M.; Shields, A. J.; Salter, C. L.; Farrer, I.; Nicoll, C. A.; Ritchie, D. A.

2011-01-01

Electrically-driven entangled photon generation is demonstrated for the first time using a single semiconductor quantum dot embedded in a light emitting diode structure. The entanglement fidelity is shown to be of sufficient quality for applications such as quantum key distribution.

Criticality and avalanches in neural networks

International Nuclear Information System (INIS)

Zare, Marzieh; Grigolini, Paolo

2013-01-01

Highlights: • Temporal criticality is used as criticality indicator. • The Mittag–Leffler function is proposed as a proper form of temporal complexity. • The distribution of avalanche size becomes scale free in the supercritical state. • The scale-free distribution of avalanche sizes is an epileptic manifestation. -- Abstract: Experimental work, both in vitro and in vivo, reveals the occurrence of neural avalanches with an inverse power law distribution in size and time duration. These properties are interpreted as an evident manifestation of criticality, thereby suggesting that the brain is an operating near criticality complex system: an attractive theoretical perspective that according to Gerhard Werner may help to shed light on the origin of consciousness. However, a recent experimental observation shows no clear evidence for power-law scaling in awake and sleeping brain of mammals, casting doubts on the assumption that the brain works at criticality. This article rests on a model proposed by our group in earlier publications to generate neural avalanches with the time duration and size distribution matching the experimental results on neural networks. We now refine the analysis of the time distance between consecutive firing bursts and observe the deviation of the corresponding distribution from the Poisson statistics, as the system moves from the non-cooperative to the cooperative regime. In other words, we make the assumption that the genuine signature of criticality may emerge from temporal complexity rather than from the size and time duration of avalanches. We argue that the Mittag–Leffler (ML) exponential function is a satisfactory indicator of temporal complexity, namely of the occurrence of non-Poisson and renewal events. The assumption that the onset of criticality corresponds to the birth of renewal non-Poisson events establishes a neat distinction between the ML function and the power law avalanches generating regime. We find that

Free-running InGaAs/InP single photon detector with feedback quenching IC

International Nuclear Information System (INIS)

Zheng, Fu; Wang, Feilong; Wang, Chao; Sun, Zhibin; Zhai, Guangjie

2015-01-01

InGaAs/InP avalanche photodiodes (APD) are usually employed as Geiger-mode single photon detector at near-infrared wavelength between 1.0 μm and 1.7 μm. In order to work in the free-running regime rather than gated regime, we demonstrate a feedback quenching integrated circuit to rapidly quench the avalanche and reset the APD. Because this IC is close to the APD, parasitic capacitance is largely reduced, thus reducing the quench-time, reset-time and also the afterpulsing probability. We investigated the free-running single photon detector's afterpulsing effect, de-trapping time, dark count rate and detection efficiency and also compared with gated regime operation. After corrected for deadtime and afterpulse, we found the free-running detector performance is comparable with gated regime

Supershort avalanche electron beams and x-ray in high-pressure nanosecond discharges

International Nuclear Information System (INIS)

Tarasenko, V F; Baksht, E H; Kostyrya, I D; Lomaev, M I; Rybka, D V

2008-01-01

The properties of a supershort avalanche electron beam (S AEB) and X-ray radiation produced using a nanosecond volume discharge are examined. An electron beam of the runaway electrons with amplitude of ∼ 50 A has been obtained in air atmospheric pressure. It is reported that S AEB is formed in the angle above 2π sr. Three groups of the runaway electrons are formed in a gas diode under atmospheric air pressure, when nanosecond voltage pulses with amplitude of hundreds of kilovolts are applied. The electron beam has been generated behind a 45 μm thick AlBe foil in SF 6 and Xe under the pressure of 2 arm, and in He under the pressure of about 12 atm. The paper gives the analysis of a generation mechanism of SAEB.

Development of a 13-in. Hybrid Avalanche Photo-Detector (HAPD) for a next generation water Cherenkov detector

International Nuclear Information System (INIS)

Nakayama, H.; Kusaka, A.; Kakuno, H.; Abe, T.; Iwasaki, M.; Aihara, H.; Shiozawa, M.; Tanaka, M.; Kyushima, H.; Suyama, M.; Kawai, Y.

2006-01-01

We have developed a 13-in. Hybrid Avalanche Photo-Detector (HAPD) for photosensors in next generation water Cherenkov type detectors. We study the performance of the HAPD and the results show good time resolution better than σ=1ns, good sensitivity for single photon detection, wide dynamic range, and good uniformity on the photocathode. The HAPD is also expected to be less expensive than large PMTs because of its simpler structure without dynodes

Single-photon counting in the 1550-nm wavelength region for quantum cryptography

International Nuclear Information System (INIS)

Park, Chul-Woo; Park, Jun-Bum; Park, Young-Soo; Lee, Seung-Hun; Shin, Hyun-Jun; Bae, Byung-Seong; Moon, Sung; Han, Sang-Kook

2006-01-01

In this paper, we report the measured performance of an InGaAs avalanche photodiode (APD) Module fabricated for single-photon counting. We measured the dark current noise, the after-pulse noise, and the quantum efficiency of the single- photon detector for different temperatures. We then examined our single-photon source and detection system by measuring the coincident probability. From our measurement, we observed that the after-pulse effect of the APD at temperatures below 105 .deg. C caused cascade noise build-up on the succeeding electrical signals.

Multi-LED parallel transmission for long distance underwater VLC system with one SPAD receiver

Science.gov (United States)

Wang, Chao; Yu, Hong-Yi; Zhu, Yi-Jun; Wang, Tao; Ji, Ya-Wei

2018-03-01

In this paper, a multiple light emitting diode (LED) chips parallel transmission (Multi-LED-PT) scheme for underwater visible light communication system with one photon-counting single photon avalanche diode (SPAD) receiver is proposed. As the lamp always consists of multi-LED chips, the data rate could be improved when we drive these multi-LED chips parallel by using the interleaver-division-multiplexing technique. For each chip, the on-off-keying modulation is used to reduce the influence of clipping. Then a serial successive interference cancellation detection algorithm based on ideal Poisson photon-counting channel by the SPAD is proposed. Finally, compared to the SPAD-based direct current-biased optical orthogonal frequency division multiplexing system, the proposed Multi-LED-PT system could improve the error-rate performance and anti-nonlinearity performance significantly under the effects of absorption, scattering and weak turbulence-induced channel fading together.

Flexible manufacturing for photonics device assembly

Science.gov (United States)

Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Diode Laser Application in Soft Tissue Oral Surgery

Science.gov (United States)

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Photonics activities at DTU Fotonik

DEFF Research Database (Denmark)

Jeppesen, Palle; Jepsen, Peter Uhd; Lodahl, Peter

2010-01-01

DTU Fotonik, Department of Photonics Engineering at the Technical University of Denmark has about 200 employees including 60 PhD students. The ambition is to be among the world’s leading University departments within photonics research, education and innovation. To fulfil this ambition, DTU Fotonik...... tries to attract excellent researchers and students from all over the world and to collaborate with world leading research institutes and companies. The activities span from quantum photonics, nanotechnology and metamaterials over nonlinear fiber optics, optical sensors and diode lasers & LED systems...

Time and spectrum-resolving multiphoton correlator for 300–900 nm

Energy Technology Data Exchange (ETDEWEB)

Johnsen, Kelsey D.; Thibault, Marilyne; Jennewein, Thomas [Institute for Quantum Computing and Department for Physics and Astronomy, University of Waterloo, 200 University Ave. West, Waterloo, Ontario N2L 3G1 (Canada); Kolenderski, Piotr, E-mail: kolenderski@fizyka.umk.pl [Institute for Quantum Computing and Department for Physics and Astronomy, University of Waterloo, 200 University Ave. West, Waterloo, Ontario N2L 3G1 (Canada); Faculty of Physics, Astronomy and Informatics, Institute of Physics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Scarcella, Carmelo; Tosi, Alberto [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2014-10-14

We demonstrate a single-photon sensitive spectrometer in the visible range, which allows us to perform time-resolved and multi-photon spectral correlation measurements at room temperature. It is based on a monochromator composed of two gratings, collimation optics, and an array of single photon avalanche diodes. The time resolution can reach 110 ps and the spectral resolution is 2 nm/pixel, limited by the design of the monochromator. This technique can easily be combined with commercial monochromators and can be useful for joint spectrum measurements of two photons emitted in the process of parametric down conversion, as well as time-resolved spectrum measurements in optical coherence tomography or medical physics applications.

Propagation velocity of an avalanche along the anode wire in a Geiger-Mueller counter filled with Q-gas at 1 ATM

International Nuclear Information System (INIS)

Matsuda, Kazunori; Sanada, Junpei

1990-01-01

Simple methods were applied to investigate the characteristics of a Geiger-Mueller counter with Q-gas flowing at 1 atm. The propagation velocity of the photon-aided avalanche along the anode wire depends linearly on the strength of the electric field in the counter. Its fluctuation (FWHM) as a function of distance between the source position and the end point is discussed. (orig.)

Avalanche photoconductive switching

Science.gov (United States)

Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

Avalanche photoconductive switching

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

1989-01-01

This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

Femtosecond Photon-Counting Receiver

Science.gov (United States)

Krainak, Michael A.; Rambo, Timothy M.; Yang, Guangning; Lu, Wei; Numata, Kenji

2016-01-01

An optical correlation receiver is described that provides ultra-precise distance and/or time/pulse-width measurements even for weak (single photons) and short (femtosecond) optical signals. A new type of optical correlation receiver uses a fourth-order (intensity) interferometer to provide micron distance measurements even for weak (single photons) and short (femtosecond) optical signals. The optical correlator uses a low-noise-integrating detector that can resolve photon number. The correlation (range as a function of path delay) is calculated from the variance of the photon number of the difference of the optical signals on the two detectors. Our preliminary proof-of principle data (using a short-pulse diode laser transmitter) demonstrates tens of microns precision.

Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications

International Nuclear Information System (INIS)

Pellegrini, G.; Fernández-Martínez, P.; Baselga, M.; Fleta, C.; Flores, D.; Greco, V; Hidalgo, S.; Mandić, I.; Kramberger, G.; Quirion, D.; Ullan, M.

2014-01-01

This paper introduces a new concept of silicon radiation detector with intrinsic multiplication of the charge, called Low Gain Avalanche Detector (LGAD). These new devices are based on the standard Avalanche Photo Diodes (APD) normally used for optical and X-ray detection applications. The main differences to standard APD detectors are the low gain requested to detect high energy charged particles, and the possibility to have fine segmentation pitches: this allows fabrication of microstrip or pixel devices which do not suffer from the limitations normally found [1] in avalanche detectors. In addition, a moderate multiplication value will allow the fabrication of thinner devices with the same output signal of standard thick substrates. The investigation of these detectors provides important indications on the ability of such modified electrode geometry to control and optimize the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated silicon detectors, at reasonable bias voltage, compatible with the voltage feed limitation of the CERN High Luminosity Large Hadron Collider (HL-LHC) experiments [2]. For instance, the inner most pixel detector layers of the ATLAS tracker will be exposed to fluences up to 2×10 16 1 MeV n eq /cm 2 , while for the inner strip detector region fluences of 1×10 15 n eq /cm 2 are expected. The gain implemented in the non-irradiated devices must retain some effect also after irradiation, with a higher multiplication factor with respect to standard structures, in order to be used in harsh environments such those expected at collider experiments

Integrated ultrasonic particle positioning and low excitation light fluorescence imaging

International Nuclear Information System (INIS)

Bernassau, A. L.; Al-Rawhani, M.; Beeley, J.; Cumming, D. R. S.

2013-01-01

A compact hybrid system has been developed to position and detect fluorescent micro-particles by combining a Single Photon Avalanche Diode (SPAD) imager with an acoustic manipulator. The detector comprises a SPAD array, light-emitting diode (LED), lenses, and optical filters. The acoustic device is formed of multiple transducers surrounding an octagonal cavity. By stimulating pairs of transducers simultaneously, an acoustic landscape is created causing fluorescent micro-particles to agglomerate into lines. The fluorescent pattern is excited by a low power LED and detected by the SPAD imager. Our technique combines particle manipulation and visualization in a compact, low power, portable setup

Fully integrated free-running InGaAs/InP single-photon detector for accurate lidar applications.

Science.gov (United States)

Yu, Chao; Shangguan, Mingjia; Xia, Haiyun; Zhang, Jun; Dou, Xiankang; Pan, Jian-Wei

2017-06-26

We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a large temperature range, and an active hold-off circuit implemented in a field programmable gate array is applied to further suppress the afterpulsing contribution. The key parameters of the free-running SPD including photon detection efficiency (PDE), dark count rate (DCR), afterpulse probability, and maximum count rate (MCR) are dedicatedly optimized for lidar application in practice. We then perform a field experiment using a Mie lidar system with 20 kHz pulse repetition frequency to compare the performance between the free-running InGaAs/InP SPD and a commercial superconducting nanowire single-photon detector (SNSPD). Our detector exhibits good performance with 1.6 Mcps MCR (0.6 μs hold-off time), 10% PDE, 950 cps DCR, and 18% afterpulse probability over 50 μs period. Such performance is worse than the SNSPD with 60% PDE and 300 cps DCR. However, after performing a specific algorithm that we have developed for afterpulse and count rate corrections, the lidar system performance in terms of range-corrected signal (Pr 2 ) distribution using our SPD agrees very well with the result using the SNSPD, with only a relative error of ∼2%. Due to the advantages of low-cost and small size of InGaAs/InP NFADs, such detector provides a practical solution for accurate lidar applications.

First approximations in avalanche model validations using seismic information

Science.gov (United States)

Roig Lafon, Pere; Suriñach, Emma; Bartelt, Perry; Pérez-Guillén, Cristina; Tapia, Mar; Sovilla, Betty

2017-04-01

Avalanche dynamics modelling is an essential tool for snow hazard management. Scenario based numerical modelling provides quantitative arguments for decision-making. The software tool RAMMS (WSL Institute for Snow and Avalanche Research SLF) is one such tool, often used by government authorities and geotechnical offices. As avalanche models improve, the quality of the numerical results will depend increasingly on user experience on the specification of input (e.g. release and entrainment volumes, secondary releases, snow temperature and quality). New model developments must continue to be validated using real phenomena data, for improving performance and reliability. The avalanches group form University of Barcelona (RISKNAT - UB), has studied the seismic signals generated from avalanches since 1994. Presently, the group manages the seismic installation at SLF's Vallée de la Sionne experimental site (VDLS). At VDLS the recorded seismic signals can be correlated to other avalanche measurement techniques, including both advanced remote sensing methods (radars, videogrammetry) and obstacle based sensors (pressure, capacitance, optical sender-reflector barriers). This comparison between different measurement techniques allows the group to address the question if seismic analysis can be used alone, on more additional avalanche tracks, to gain insight and validate numerical avalanche dynamics models in different terrain conditions. In this study, we aim to add the seismic data as an external record of the phenomena, able to validate RAMMS models. The seismic sensors are considerable easy and cheaper to install than other physical measuring tools, and are able to record data from the phenomena in every atmospheric conditions (e.g. bad weather, low light, freezing make photography, and other kind of sensors not usable). With seismic signals, we record the temporal evolution of the inner and denser parts of the avalanche. We are able to recognize the approximate position

Anthropogenic effect on avalanche and debris flow activity

OpenAIRE

S. A. Sokratov; Yu. G. Seliverstov; A. L. Shnyparkov; K. P. Koltermann

2013-01-01

The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoida...

Dealing with the white death: avalanche risk management for traffic routes.

Science.gov (United States)

Rheinberger, Christoph M; Bründl, Michael; Rhyner, Jakob

2009-01-01

This article discusses mitigation strategies to protect traffic routes from snow avalanches. Up to now, mitigation of snow avalanches on many roads and railways in the Alps has relied on avalanche sheds, which require large initial investments resulting in high opportunity costs. Therefore, avalanche risk managers have increasingly adopted organizational mitigation measures such as warning systems and closure policies instead. The effectiveness of these measures is, however, greatly dependent on human decisions. In this article, we present a method for optimizing avalanche mitigation for traffic routes in terms of both their risk reduction impact and their net benefit to society. First, we introduce a generic framework for assessing avalanche risk and for quantifying the impact of mitigation. This allows for sound cost-benefit comparisons between alternative mitigation strategies. Second, we illustrate the framework with a case study from Switzerland. Our findings suggest that site-specific characteristics of avalanche paths, as well as the economic importance of a traffic route, are decisive for the choice of optimal mitigation strategies. On routes endangered by few avalanche paths with frequent avalanche occurrences, structural measures are most efficient, whereas reliance on organizational mitigation is often the most appropriate strategy on routes endangered by many paths with infrequent or fuzzy avalanche risk. Finally, keeping a traffic route open may be very important for tourism or the transport industry. Hence, local economic value may promote the use of a hybrid strategy that combines organizational and structural measures to optimize the resource allocation of avalanche risk mitigation.

Statistics of Electron Avalanches and Streamers

Directory of Open Access Journals (Sweden)

T. Ficker

2007-01-01

Full Text Available We have studied the severe systematic deviations of populations of electron avalanches from the Furry distribution, which has been held to be the statistical law corresponding to them, and a possible explanation has been sought. A  new theoretical concept based on fractal avalanche multiplication has been proposed and is shown to be a convenient candidate for explaining these deviations from Furry statistics. 

Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

International Nuclear Information System (INIS)

Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

2013-06-01

We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

International Nuclear Information System (INIS)

Tang Yin; Cai Qing; Chen Dun-Jun; Lu Hai; Zhang Rong; Zheng You-Dou; Yang Lian-Hong; Dong Ke-Xiu

2017-01-01

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al 0.3 Ga 0.7 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al 0.3 Ga 0.7 N which has about a six times higher hole ionization coefficient than the high-Al-content Al 0.45 Ga 0.55 N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device. (paper)

Transient events in bright debris discs: Collisional avalanches revisited

Science.gov (United States)

Thebault, P.; Kral, Q.

2018-01-01

Context. A collisional avalanche is set off by the breakup of a large planetesimal, releasing vast amounts of small unbound grains that enter a debris disc located further away from the star, triggering there a collisional chain reaction that could potentially create detectable transient structures. Aims: We investigate this mechanism, using for the first time a fully self-consistent code coupling dynamical and collisional evolutions. We also quantify for the first time the photometric evolution of the system and investigate whether or not avalanches could explain the short-term luminosity variations recently observed in some extremely bright debris discs. Methods: We use the state-of-the-art LIDT-DD code. We consider an avalanche-favoring A6V star, and two set-ups: a "cold disc" case, with a dust release at 10 au and an outer disc extending from 50 to 120 au, and a "warm disc" case with the release at 1 au and a 5-12 au outer disc. We explore, in addition, two key parameters: the density (parameterized by its optical depth τ) of the main outer disc and the amount of dust released by the initial breakup. Results: We find that avalanches could leave detectable structures on resolved images, for both "cold" and "warm" disc cases, in discs with τ of a few 10-3, provided that large dust masses (≳1020-5 × 1022 g) are initially released. The integrated photometric excess due to an avalanche is relatively limited, less than 10% for these released dust masses, peaking in the λ 10-20 μm domain and becoming insignificant beyond 40-50 μm. Contrary to earlier studies, we do not obtain stronger avalanches when increasing τ to higher values. Likewise, we do not observe a significant luminosity deficit, as compared to the pre-avalanche level, after the passage of the avalanche. These two results concur to make avalanches an unlikely explanation for the sharp luminosity drops observed in some extremely bright debris discs. The ideal configuration for observing an

Snow Avalanche Disturbance Ecology: Examples From the San Juan Mountains, Colorado.

Science.gov (United States)

Simonson, S.; Fassnacht, S. R.

2008-12-01

We evaluated landscape ecology approaches to characterize snow avalanche paths based on patterns of plant species composition and evidence of disturbance. Historical records of avalanche incidents, patterns in the annual growth layers of woody plants, and distributions of plant species can be used to quantify and map the frequency and magnitude of snow slide events. Near Silverton, Colorado, a series of snow storms in January of 2005 resulted in many avalanche paths running full track at 30 and 100 year return frequency. Many avalanches cut fresh trimlines, widening their tracks by uprooting, stripping, and breaking mature trees. Powerful avalanches deposited massive piles of snow, rocks, and woody debris in their runout zones. We used cross-section discs and cores of representative downed trees to detect dendro-ecological signals of past snow avalanche disturbance. Avalanche signals included impact scars from the moving snow and associated wind blast, relative width of annual growth rings, and development of reaction wood in response to tilting. Initial measurements of plant diversity and disturbance along the elevation gradient of an avalanche path near Silverton indicate that avalanche activity influences patterns of forest cover, contributes to the high local plant species diversity, and provides opportunities for new seedling establishment.

SNOW AVALANCHE ACTIVITY IN PARÂNG SKI AREA REVEALED BY TREE-RINGS

Directory of Open Access Journals (Sweden)

F. MESEȘAN

2014-11-01

Full Text Available Snow Avalanche Activity in Parâng Ski Area Revealed by Tree-Rings. Snow avalanches hold favorable conditions to manifest in Parâng Mountains but only one event is historically known, without destructive impact upon infrastructure or fatalities and this region wasn’t yet the object of avalanche research. The existing ski infrastructure of Parâng resort located in the west of Parâng Mountains is proposed to be extended in the steep slopes of subalpine area. Field evidence pinpoints that these steep slopes were affected by snow avalanches in the past. In this study we analyzed 11 stem discs and 31 increment cores extracted from 22 spruces (Picea abies (L. Karst impacted by avalanches, in order to obtain more information about past avalanches activity. Using the dendrogeomorphological approach we found 13 avalanche events that occurred along Scărița avalanche path, since 1935 until 2012, nine of them produced in the last 20 years. The tree-rings data inferred an intense snow avalanche activity along this avalanche path. This study not only calls for more research in the study area but also proves that snow avalanches could constitute an important restrictive factor for the tourism infrastructure and related activities in the area. It must be taken into consideration by the future extension of tourism infrastructure. Keywords: snow avalanche, Parâng Mountains, dendrogeomorphology, ski area.

Scintillator high-gain avalanche rushing photoconductor active-matrix flat panel imager: zero-spatial frequency x-ray imaging properties of the solid-state SHARP sensor structure.

Science.gov (United States)

Wronski, M; Zhao, W; Tanioka, K; Decrescenzo, G; Rowlands, J A

2012-11-01

The authors are investigating the feasibility of a new type of solid-state x-ray imaging sensor with programmable avalanche gain: scintillator high-gain avalanche rushing photoconductor active matrix flat panel imager (SHARP-AMFPI). The purpose of the present work is to investigate the inherent x-ray detection properties of SHARP and demonstrate its wide dynamic range through programmable gain. A distributed resistive layer (DRL) was developed to maintain stable avalanche gain operation in a solid-state HARP. The signal and noise properties of the HARP-DRL for optical photon detection were investigated as a function of avalanche gain both theoretically and experimentally, and the results were compared with HARP tube (with electron beam readout) used in previous investigations of zero spatial frequency performance of SHARP. For this new investigation, a solid-state SHARP x-ray image sensor was formed by direct optical coupling of the HARP-DRL with a structured cesium iodide (CsI) scintillator. The x-ray sensitivity of this sensor was measured as a function of avalanche gain and the results were compared with the sensitivity of HARP-DRL measured optically. The dynamic range of HARP-DRL with variable avalanche gain was investigated for the entire exposure range encountered in radiography∕fluoroscopy (R∕F) applications. The signal from HARP-DRL as a function of electric field showed stable avalanche gain, and the noise associated with the avalanche process agrees well with theory and previous measurements from a HARP tube. This result indicates that when coupled with CsI for x-ray detection, the additional noise associated with avalanche gain in HARP-DRL is negligible. The x-ray sensitivity measurements using the SHARP sensor produced identical avalanche gain dependence on electric field as the optical measurements with HARP-DRL. Adjusting the avalanche multiplication gain in HARP-DRL enabled a very wide dynamic range which encompassed all clinically relevant

Scintillator high-gain avalanche rushing photoconductor active-matrix flat panel imager: Zero-spatial frequency x-ray imaging properties of the solid-state SHARP sensor structure

International Nuclear Information System (INIS)

Wronski, M.; Zhao, W.; Tanioka, K.; DeCrescenzo, G.; Rowlands, J. A.

2012-01-01

Purpose: The authors are investigating the feasibility of a new type of solid-state x-ray imaging sensor with programmable avalanche gain: scintillator high-gain avalanche rushing photoconductor active matrix flat panel imager (SHARP-AMFPI). The purpose of the present work is to investigate the inherent x-ray detection properties of SHARP and demonstrate its wide dynamic range through programmable gain. Methods: A distributed resistive layer (DRL) was developed to maintain stable avalanche gain operation in a solid-state HARP. The signal and noise properties of the HARP-DRL for optical photon detection were investigated as a function of avalanche gain both theoretically and experimentally, and the results were compared with HARP tube (with electron beam readout) used in previous investigations of zero spatial frequency performance of SHARP. For this new investigation, a solid-state SHARP x-ray image sensor was formed by direct optical coupling of the HARP-DRL with a structured cesium iodide (CsI) scintillator. The x-ray sensitivity of this sensor was measured as a function of avalanche gain and the results were compared with the sensitivity of HARP-DRL measured optically. The dynamic range of HARP-DRL with variable avalanche gain was investigated for the entire exposure range encountered in radiography/fluoroscopy (R/F) applications. Results: The signal from HARP-DRL as a function of electric field showed stable avalanche gain, and the noise associated with the avalanche process agrees well with theory and previous measurements from a HARP tube. This result indicates that when coupled with CsI for x-ray detection, the additional noise associated with avalanche gain in HARP-DRL is negligible. The x-ray sensitivity measurements using the SHARP sensor produced identical avalanche gain dependence on electric field as the optical measurements with HARP-DRL. Adjusting the avalanche multiplication gain in HARP-DRL enabled a very wide dynamic range which encompassed all

Relating rock avalanche morphology to emplacement processes

Science.gov (United States)

Dufresne, Anja; Prager, Christoph; Bösmeier, Annette

2015-04-01

The morphology, structure and sedimentological characteristics of rock avalanche deposits reflect both internal emplacement processes and external influences, such as runout path characteristics. The latter is mainly predisposed by topography, substrate types, and hydrogeological conditions. Additionally, the geological setting at the source slope controls, e.g. the spatial distribution of accumulated lithologies and hence material property-related changes in morphology, or the maximum clast size and amount of fines of different lithological units. The Holocene Tschirgant rock avalanche (Tyrol, Austria) resulted from failure of an intensely deformed carbonate rock mass on the southeast face of a 2,370-m-high mountain ridge. The initially sliding rock mass rapidly fragmented as it moved towards the floor of the Inn River valley. Part of the 200-250 x 106 m3 (Patzelt 2012) rock avalanche debris collided with and moved around an opposing bedrock ridge and flowed into the Ötz valley, reaching up to 6.3 km from source. Where the Tschirgant rock avalanche spread freely it formed longitudinal ridges aligned along motion direction as well as smaller hummocks. Encountering high topography, it left runup ridges, fallback patterns (i.e. secondary collapse), and compressional morphology (successively elevated, transverse ridges). Further evidence for the mechanical landslide behaviour is given by large volumes of mobilized valley-fill sediments (polymict gravels and sands). These sediments indicate both shearing and compressional faulting within the rock avalanche mass (forming their own morphological units through, e.g. in situ bulldozing or as distinctly different hummocky terrain), but also indicate extension of the spreading landslide mass (i.e. intercalated/injected gravels encountered mainly in morphological depressions between hummocks). Further influences on its morphology are given by the different lithological units. E.g. the transition from massive dolomite

Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

Energy Technology Data Exchange (ETDEWEB)

Kwon, Y.; Yun, Y. B. [Yonsei University, Seoul (Korea, Republic of); Ha, J. M. [Yonsei University, Seoul (Korea, Republic of); Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Lee, J. S.; Yoon, Y. S. [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Eun, J. W. [Namseoul University, Cheonan (Korea, Republic of)

2012-05-15

A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

Investigations of single-electron avalanches in a proportional drift tube

International Nuclear Information System (INIS)

Anderson, W.S.; Armitage, J.C.; Chevreau, P.; Heinrich, J.G.; Lu, C.; McDonald, I.; McDonald, K.T.; Miller, B.; Secrest, D.; Weckel, J.

1990-01-01

Detailed information on single-electron drift and avalanche behavior has a basic interest in an investigation of gas-chamber performance. Its timing, avalanche distribution, attachment by the working gas mixtures, etc., provide various criteria for choosing the best suitable gas mixture under a specific experimental circumstance. Investigations of single-electron avalanches in a proportional drift tube have been carried out with a pulsed N 2 laser. The study consists of two aspects: timing properties, and fluctuations in the gas avalanche

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

2016-01-01

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

Terrain Classification of Norwegian Slab Avalanche Accidents

Science.gov (United States)

Hallandvik, Linda; Aadland, Eivind; Vikene, Odd Lennart

2016-01-01

It is difficult to rely on snow conditions, weather, and human factors when making judgments about avalanche risk because these variables are dynamic and complex; terrain, however, is more easily observed and interpreted. Therefore, this study aimed to investigate (1) the type of terrain in which historical fatal snow avalanche accidents in Norway…

Metastability and avalanche dynamics in strongly correlated gases with long-range interactions

Science.gov (United States)

Hruby, Lorenz; Dogra, Nishant; Landini, Manuele; Donner, Tobias; Esslinger, Tilman

2018-03-01

We experimentally study the stability of a bosonic Mott insulator against the formation of a density wave induced by long-range interactions and characterize the intrinsic dynamics between these two states. The Mott insulator is created in a quantum degenerate gas of 87-Rubidium atoms, trapped in a 3D optical lattice. The gas is located inside and globally coupled to an optical cavity. This causes interactions of global range, mediated by photons dispersively scattered between a transverse lattice and the cavity. The scattering comes with an atomic density modulation, which is measured by the photon flux leaking from the cavity. We initialize the system in a Mott-insulating state and then rapidly increase the global coupling strength. We observe that the system falls into either of two distinct final states. One is characterized by a low photon flux, signaling a Mott insulator, and the other is characterized by a high photon flux, which we associate with a density wave. Ramping the global coupling slowly, we observe a hysteresis loop between the two states—a further signature of metastability. A comparison with a theoretical model confirms that the metastability originates in the competition between short- and global-range interactions. From the increasing photon flux monitored during the switching process, we find that several thousand atoms tunnel to a neighboring site on the timescale of the single-particle dynamics. We argue that a density modulation, initially forming in the compressible surface of the trapped gas, triggers an avalanche tunneling process in the Mott-insulating region.

Photonic crystal and photonic quasicrystal patterned in PDMS surfaces and their effect on LED radiation properties

Energy Technology Data Exchange (ETDEWEB)

Suslik, Lubos [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Pudis, Dusan, E-mail: pudis@fyzika.uniza.sk [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Goraus, Matej [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Nolte, Rainer [Fakultät für Maschinenbau FG Lichttechnik Ilmenau University of Technology, Ilmenau (Germany); Kovac, Jaroslav [Inst. of Electronics and Photonics, Slovak University of Technology, Ilkovicova 3, 812 19, Bratislava (Slovakia); Durisova, Jana; Gaso, Peter [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Hronec, Pavol [Inst. of Electronics and Photonics, Slovak University of Technology, Ilkovicova 3, 812 19, Bratislava (Slovakia); Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany)

2017-02-15

Graphical abstract: Photonic quasicrystal patterned in the surface of polydimethylsiloxane membrane (left) and radiation pattern of light emitting diode with patterned membrane applied in the surface (right). - Highlights: • We presented fabrication technique of PDMS membranes with patterned surface by photonic crystal (PhC) and photonic quasi-crystal (PQC). • Presented technique is effective for preparation PhC and PQC PDMS membranes easily implementing in the LED chip. • From the goniophotometer measurements, the membranes document effective angular emission due to the diffraction on patterned surfaces. • 12 fold symmetry PQC structure shows homogeneous radiation pattern, while the 2 fold symmetry of square PhC shows evident diffraction lobes. - Abstract: We present results of fabrication and implementation of thin polydimethylsiloxane (PDMS) membranes with patterned surface for the light emitting diode (LED). PDMS membranes were patterned by using the interference lithography in combination with embossing technique. Two-dimensional photonic crystal and photonic quasicrystal structures with different period were patterned in the surface of thin PDMS membranes with depth up to 550 nm. Patterned PDMS membranes placed on the LED chip effectively diffracted light and increased angular emission of LED radiation pattern. We presented effective technique for fabrication of patterned PDMS membranes, which could modify the emission properties of optoelectronic devices and can be applied directly on surface LEDs and small optical devices.

Photon detector configured to employ the Gunn effect and method of use

Science.gov (United States)

Cich, Michael J

2015-03-17

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

Science.gov (United States)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Discrimination capability of avalanche counters detecting different ionizing particles

International Nuclear Information System (INIS)

Prete, G.; Viesti, G.; Padua Univ.

1985-01-01

The discrimination capability of avalanche counters to detect different ionizing particles has been studied using a 252 Cf source. Pulse height, pulse-height resolution and timing properties have been measured as a function of the reduced applied voltage for parallel-plate and parallel-grid avalanche counters. At the highest applied voltages, space charge effects shift the pulse-height signal of the avalanche counter away from being linearly proportional to the stopping power of the detected particles and cause the pulse-height resolution to deteriorate. To optimize the avalanche counter capability, without loss of time resolution, it appears better to operate the detector at voltages well below the breakdown threshold. Measurements with 32 S ions are also reported. (orig.)

Statistical evaluation of waveform collapse reveals scale-free properties of neuronal avalanches

Directory of Open Access Journals (Sweden)

Aleena eShaukat

2016-04-01

Full Text Available Neural avalanches are a prominent form of brain activity characterized by network-wide bursts whose statistics follow a power-law distribution with a slope near 3/2. Recent work suggests that avalanches of different durations can be rescaled and thus collapsed together. This collapse mirrors work in statistical physics where it is proposed to form a signature of systems evolving in a critical state. However, no rigorous statistical test has been proposed to examine the degree to which neuronal avalanches collapse together. Here, we describe a statistical test based on functional data analysis, where raw avalanches are first smoothed with a Fourier basis, then rescaled using a time-warping function. Finally, an F ratio test combined with a bootstrap permutation is employed to determine if avalanches collapse together in a statistically reliable fashion. To illustrate this approach, we recorded avalanches from cortical cultures on multielectrode arrays as in previous work. Analyses show that avalanches of various durations can be collapsed together in a statistically robust fashion. However, a principal components analysis revealed that the offset of avalanches resulted in marked variance in the time-warping function, thus arguing for limitations to the strict fractal nature of avalanche dynamics. We compared these results with those obtained from cultures treated with an AMPA/NMDA receptor antagonist (APV/DNQX, which yield a power-law of avalanche durations with a slope greater than 3/2. When collapsed together, these avalanches showed marked misalignments both at onset and offset time-points. In sum, the proposed statistical evaluation suggests the presence of scale-free avalanche waveforms and constitutes an avenue for examining critical dynamics in neuronal systems.

Active graphene-silicon hybrid diode for terahertz waves.

Science.gov (United States)

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

International Nuclear Information System (INIS)

Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

2014-01-01

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

Avalanche and streamer mode operation of resistive plate chambers

International Nuclear Information System (INIS)

Cardarelli, R.; Makeev, V.; Santonico, R.

1996-01-01

A resistive plate chamber was operated at voltages increasing in steps of 200 V over a 3 kV interval and the transition between the avalanche and streamer modes was studied. The avalanche amplitude was observed to be exponentially dependent on the operating voltage up to a value, characteristic of the gas, where the avalanche saturation occurs and delayed streamer signals start to appear. Signal waveforms, charge and timing distributions are reported. (orig.)

Radiation Detection Measurements with a New 'Buried Junction' Silicon Avalanche Photodiode

CERN Document Server

Lecomte, R; Rouleau, D; Dautet, H; McIntyre, R J; McSween, D; Webb, P

1999-01-01

An improved version of a recently developed 'Buried Junction' avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the 'Reverse APD', is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of ener...

4H-SiC Schottky diode arrays for X-ray detection

Energy Technology Data Exchange (ETDEWEB)

Lioliou, G. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Chan, H.K. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Gohil, T. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Vassilevski, K.V.; Wright, N.G.; Horsfall, A.B. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Barnett, A.M. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom)

2016-12-21

Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20°C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2×2 or 1×3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm{sup 2} at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 to 1.68 keV among different diodes.

Avalanche localization and its effects in proportional counters

International Nuclear Information System (INIS)

Fischer, J.; Okuno, H.; Walenta, A.H.

1977-11-01

Avalanche development around the anode wire in a gas proportional counter is investigated. In the region of proportional gas amplification, the avalanche is found to be well localized on one side of the anode wire, where the electrons arrive along the field lines from the point of primary ionization. Induced signals on electrodes surrounding the anode wire are used to measure the azimuthal position of the avalanche on the anode wire. Practical applications of the phenomena such as left-right assignment in drift chambers and measurement of the angular direction of the primary ionization electrons drifting towards the anode wire are discussed

Automated identification of potential snow avalanche release areas based on digital elevation models

Directory of Open Access Journals (Sweden)

Y. Bühler

2013-05-01

Full Text Available The identification of snow avalanche release areas is a very difficult task. The release mechanism of snow avalanches depends on many different terrain, meteorological, snowpack and triggering parameters and their interactions, which are very difficult to assess. In many alpine regions such as the Indian Himalaya, nearly no information on avalanche release areas exists mainly due to the very rough and poorly accessible terrain, the vast size of the region and the lack of avalanche records. However avalanche release information is urgently required for numerical simulation of avalanche events to plan mitigation measures, for hazard mapping and to secure important roads. The Rohtang tunnel access road near Manali, Himachal Pradesh, India, is such an example. By far the most reliable way to identify avalanche release areas is using historic avalanche records and field investigations accomplished by avalanche experts in the formation zones. But both methods are not feasible for this area due to the rough terrain, its vast extent and lack of time. Therefore, we develop an operational, easy-to-use automated potential release area (PRA detection tool in Python/ArcGIS which uses high spatial resolution digital elevation models (DEMs and forest cover information derived from airborne remote sensing instruments as input. Such instruments can acquire spatially continuous data even over inaccessible terrain and cover large areas. We validate our tool using a database of historic avalanches acquired over 56 yr in the neighborhood of Davos, Switzerland, and apply this method for the avalanche tracks along the Rohtang tunnel access road. This tool, used by avalanche experts, delivers valuable input to identify focus areas for more-detailed investigations on avalanche release areas in remote regions such as the Indian Himalaya and is a precondition for large-scale avalanche hazard mapping.

Automated identification of potential snow avalanche release areas based on digital elevation models

Science.gov (United States)

Bühler, Y.; Kumar, S.; Veitinger, J.; Christen, M.; Stoffel, A.; Snehmani

2013-05-01

The identification of snow avalanche release areas is a very difficult task. The release mechanism of snow avalanches depends on many different terrain, meteorological, snowpack and triggering parameters and their interactions, which are very difficult to assess. In many alpine regions such as the Indian Himalaya, nearly no information on avalanche release areas exists mainly due to the very rough and poorly accessible terrain, the vast size of the region and the lack of avalanche records. However avalanche release information is urgently required for numerical simulation of avalanche events to plan mitigation measures, for hazard mapping and to secure important roads. The Rohtang tunnel access road near Manali, Himachal Pradesh, India, is such an example. By far the most reliable way to identify avalanche release areas is using historic avalanche records and field investigations accomplished by avalanche experts in the formation zones. But both methods are not feasible for this area due to the rough terrain, its vast extent and lack of time. Therefore, we develop an operational, easy-to-use automated potential release area (PRA) detection tool in Python/ArcGIS which uses high spatial resolution digital elevation models (DEMs) and forest cover information derived from airborne remote sensing instruments as input. Such instruments can acquire spatially continuous data even over inaccessible terrain and cover large areas. We validate our tool using a database of historic avalanches acquired over 56 yr in the neighborhood of Davos, Switzerland, and apply this method for the avalanche tracks along the Rohtang tunnel access road. This tool, used by avalanche experts, delivers valuable input to identify focus areas for more-detailed investigations on avalanche release areas in remote regions such as the Indian Himalaya and is a precondition for large-scale avalanche hazard mapping.

An experimentally verified model for estimating the distance resolution capability of direct time of flight 3D optical imaging systems

International Nuclear Information System (INIS)

Nguyen, K Q K; Fisher, E M D; Walton, A J; Underwood, I

2013-01-01

This report introduces a new statistical model for time-resolved photon detection in a generic single-photon-sensitive sensor array. The model is validated by comparing modelled data with experimental data collected on a single-photon avalanche diode sensor array. Data produced by the model are used alongside corresponding experimental data to calculate, for the first time, the effective distance resolution of a pulsed direct time of flight 3D optical imaging system over a range of conditions using four peak-detection algorithms. The relative performance of the algorithms is compared. The model can be used to improve the system design process and inform selection of the optimal peak-detection algorithm. (paper)

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Energy Technology Data Exchange (ETDEWEB)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)

2014-07-07

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

International Nuclear Information System (INIS)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel; Haïdar, Riad

2014-01-01

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

A 3-stage gated UV-photon gaseous detector with optical imaging

International Nuclear Information System (INIS)

Breskin, A.; Chechik, R.; Sauvage, D.

1989-03-01

UV-photons are detected by a low pressure photosensitive multistep gaseous detector. Photoelectrons are multiplied in two charge amplification stages. A third, light amplification stage operating in a scintillation mode, provides light yields >5.10 7 visible photons per single photoelectron avalanche, in Argon-C 2 H 6 -TMAE gas mixture. We present results on absolute photon yields in various TMAE gas mixtures, at low gas pressure and at low charge gains. We describe the operation mechanism and some basic properties of the gated 3-stage detectors, such as stability of operation at high background rates and localization resolutions particularly at large TMAE concentration and high temperature operation conditions. Further applications are discussed. (authors)

Avalanches near a solid insulator in nitrogen gas at atmospheric pressure

International Nuclear Information System (INIS)

Mahajan, S.M.; Sudarshan, T.S.; Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208)

1989-01-01

The pulsed Townsend (PT) technique was used to record the growth of avalanches near a solid insulator in nitrogen gas at 0.1 MPa. Several other nonconventional techniques for releasing initiatory electrons at the cathode are discussed. In this paper, experimental results of avalanches initiated by illuminating a fast (0.6-ns) nitrogen laser onto the cathode triple junction are presented. Data were recorded with plexiglas, Teflon, high-density polyethylene, low-density polyethylene, Delrin, etc. Effect of surface condition, variation of the distance between insulator surface and the avalanche initiation region, and the effect of a large number of previous avalanches on the avalanche characteristics at a particular voltage were studied. The Townsend primary ionization coefficient, hereafter referred to as growth coefficient (α), and drift velocity (V/sub e/) were evaluated through the PT technique. Results indicate that the avalanche growth in the vicinity of a solid insulator is less than that in an identical plain gas gap. Existence of a nonuniform field as a result of surface charges on the insulator and/or field modifications due to the avalanche space charge are believed to be responsible for this behavior

Velocity distribution in snow avalanches

Science.gov (United States)

Nishimura, K.; Ito, Y.

1997-12-01

In order to investigate the detailed structure of snow avalanches, we have made snow flow experiments at the Miyanomori ski jump in Sapporo and systematic observations in the Shiai-dani, Kurobe Canyon. In the winter of 1995-1996, a new device to measure static pressures was used to estimate velocities in the snow cloud that develops above the flowing layer of avalanches. Measurements during a large avalanche in the Shiai-dani which damaged and destroyed some instruments indicate velocities increased rapidly to more than 50 m/s soon after the front. Velocities decreased gradually in the following 10 s. Velocities of the lower flowing layer were also calculated by differencing measurement of impact pressure. Both recordings in the snow cloud and in the flowing layer changed with a similar trend and suggest a close interaction between the two layers. In addition, the velocity showed a periodic change. Power spectrum analysis of the impact pressure and the static pressure depression showed a strong peak at a frequency between 4 and 6 Hz, which might imply the existence of either ordered structure or a series of surges in the flow.

Development of analog solid-state photo-detectors for Positron Emission Tomography

International Nuclear Information System (INIS)

Bisogni, Maria Giuseppina; Morrocchi, Matteo

2016-01-01

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Development of analog solid-state photo-detectors for Positron Emission Tomography

Energy Technology Data Exchange (ETDEWEB)

Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

2016-02-11

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

Science.gov (United States)

Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

2015-10-05

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

Anthropogenic effect on avalanche and debris flow activity

Directory of Open Access Journals (Sweden)

S. A. Sokratov

2013-01-01

Full Text Available The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoidable changes of the natural environment as the result of a construction and of use of the constructed infrastructure to be account for in corresponding planning of the protection measures.

Beyond Critical Exponents in Neuronal Avalanches

Science.gov (United States)

Friedman, Nir; Butler, Tom; Deville, Robert; Beggs, John; Dahmen, Karin

2011-03-01

Neurons form a complex network in the brain, where they interact with one another by firing electrical signals. Neurons firing can trigger other neurons to fire, potentially causing avalanches of activity in the network. In many cases these avalanches have been found to be scale independent, similar to critical phenomena in diverse systems such as magnets and earthquakes. We discuss models for neuronal activity that allow for the extraction of testable, statistical predictions. We compare these models to experimental results, and go beyond critical exponents.

A novel approach to evaluate and compare computational snow avalanche simulation

Directory of Open Access Journals (Sweden)

J.-T. Fischer

2013-06-01

Full Text Available An innovative approach for the analysis and interpretation of snow avalanche simulation in three dimensional terrain is presented. Snow avalanche simulation software is used as a supporting tool in hazard mapping. When performing a high number of simulation runs the user is confronted with a considerable amount of simulation results. The objective of this work is to establish an objective, model independent framework to evaluate and compare results of different simulation approaches with respect to indicators of practical relevance, providing an answer to the important questions: how far and how destructive does an avalanche move down slope. For this purpose the Automated Indicator based Model Evaluation and Comparison (AIMEC method is introduced. It operates on a coordinate system which follows a given avalanche path. A multitude of simulation runs is performed with the snow avalanche simulation software SamosAT (Snow Avalanche MOdelling and Simulation – Advanced Technology. The variability of pressure-based run out and avalanche destructiveness along the path is investigated for multiple simulation runs, varying release volume and model parameters. With this, results of deterministic simulation software are processed and analysed by means of statistical methods. Uncertainties originating from varying input conditions, model parameters or the different model implementations are assessed. The results show that AIMEC contributes to the interpretation of avalanche simulations with a broad applicability in model evaluation, comparison as well as examination of scenario variations.

Experimental method to predict avalanches based on neural networks

Directory of Open Access Journals (Sweden)

V. V. Zhdanov

2016-01-01

Full Text Available The article presents results of experimental use of currently available statistical methods to classify the avalanche‑dangerous precipitations and snowfalls in the Kishi Almaty river basin. The avalanche service of Kazakhstan uses graphical methods for prediction of avalanches developed by I.V. Kondrashov and E.I. Kolesnikov. The main objective of this work was to develop a modern model that could be used directly at the avalanche stations. Classification of winter precipitations into dangerous snowfalls and non‑dangerous ones was performed by two following ways: the linear discriminant function (canonical analysis and artificial neural networks. Observational data on weather and avalanches in the gorge Kishi Almaty in the gorge Kishi Almaty were used as a training sample. Coefficients for the canonical variables were calculated by the software «Statistica» (Russian version 6.0, and then the necessary formula had been constructed. The accuracy of the above classification was 96%. Simulator by the authors L.N. Yasnitsky and F.М. Cherepanov was used to learn the neural networks. The trained neural network demonstrated 98% accuracy of the classification. Prepared statistical models are recommended to be tested at the snow‑avalanche stations. Results of the tests will be used for estimation of the model quality and its readiness for the operational work. In future, we plan to apply these models for classification of the avalanche danger by the five‑point international scale.

Spike avalanches exhibit universal dynamics across the sleep-wake cycle.

Directory of Open Access Journals (Sweden)

Tiago L Ribeiro

2010-11-01

Full Text Available Scale-invariant neuronal avalanches have been observed in cell cultures and slices as well as anesthetized and awake brains, suggesting that the brain operates near criticality, i.e. within a narrow margin between avalanche propagation and extinction. In theory, criticality provides many desirable features for the behaving brain, optimizing computational capabilities, information transmission, sensitivity to sensory stimuli and size of memory repertoires. However, a thorough characterization of neuronal avalanches in freely-behaving (FB animals is still missing, thus raising doubts about their relevance for brain function.To address this issue, we employed chronically implanted multielectrode arrays (MEA to record avalanches of action potentials (spikes from the cerebral cortex and hippocampus of 14 rats, as they spontaneously traversed the wake-sleep cycle, explored novel objects or were subjected to anesthesia (AN. We then modeled spike avalanches to evaluate the impact of sparse MEA sampling on their statistics. We found that the size distribution of spike avalanches are well fit by lognormal distributions in FB animals, and by truncated power laws in the AN group. FB data surrogation markedly decreases the tail of the distribution, i.e. spike shuffling destroys the largest avalanches. The FB data are also characterized by multiple key features compatible with criticality in the temporal domain, such as 1/f spectra and long-term correlations as measured by detrended fluctuation analysis. These signatures are very stable across waking, slow-wave sleep and rapid-eye-movement sleep, but collapse during anesthesia. Likewise, waiting time distributions obey a single scaling function during all natural behavioral states, but not during anesthesia. Results are equivalent for neuronal ensembles recorded from visual and tactile areas of the cerebral cortex, as well as the hippocampus.Altogether, the data provide a comprehensive link between behavior

Photonics engineering in a new light

DEFF Research Database (Denmark)

Petersen, Paul Michael; Dittmann, Lars

2009-01-01

Photonics engineering is an exciting technology that increasingly influences our daily lives. Developing new light-emitting diode (LED) light sources considerably reduces the electricity ised in lighting. In medicine, optical technology is enabling new therapies that improve health, and lasers have...

Are dragon-king neuronal avalanches dungeons for self-organized brain activity?

Science.gov (United States)

de Arcangelis, L.

2012-05-01

Recent experiments have detected a novel form of spontaneous neuronal activity both in vitro and in vivo: neuronal avalanches. The statistical properties of this activity are typical of critical phenomena, with power laws characterizing the distributions of avalanche size and duration. A critical behaviour for the spontaneous brain activity has important consequences on stimulated activity and learning. Very interestingly, these statistical properties can be altered in significant ways in epilepsy and by pharmacological manipulations. In particular, there can be an increase in the number of large events anticipated by the power law, referred to herein as dragon-king avalanches. This behaviour, as verified by numerical models, can originate from a number of different mechanisms. For instance, it is observed experimentally that the emergence of a critical behaviour depends on the subtle balance between excitatory and inhibitory mechanisms acting in the system. Perturbing this balance, by increasing either synaptic excitation or the incidence of depolarized neuronal up-states causes frequent dragon-king avalanches. Conversely, an unbalanced GABAergic inhibition or long periods of low activity in the network give rise to sub-critical behaviour. Moreover, the existence of power laws, common to other stochastic processes, like earthquakes or solar flares, suggests that correlations are relevant in these phenomena. The dragon-king avalanches may then also be the expression of pathological correlations leading to frequent avalanches encompassing all neurons. We will review the statistics of neuronal avalanches in experimental systems. We then present numerical simulations of a neuronal network model introducing within the self-organized criticality framework ingredients from the physiology of real neurons, as the refractory period, synaptic plasticity and inhibitory synapses. The avalanche critical behaviour and the role of dragon-king avalanches will be discussed in

Progress towards an Autonomous Field Deployable Diode-Laser-Based Differential Absorption Lidar (DIAL for Profiling Water Vapor in the Lower Troposphere

Directory of Open Access Journals (Sweden)

Kevin S. Repasky

2013-11-01

Full Text Available A laser transmitter has been developed and incorporated into a micro-pulse differential absorption lidar (DIAL for water vapor profiling in the lower troposphere as an important step towards long-term autonomous field operation. The laser transmitter utilizes two distributed Bragg reflector (DBR diode lasers to injection seed a pulsed tapered semiconductor optical amplifier (TSOA, and is capable of producing up to 10 mJ of pulse energy with a 1 ms pulse duration and a 10 kHz pulse repetition frequency. The on-line wavelength of the laser transmitter can operate anywhere along the water vapor absorption feature centered at 828.187 nm (in vacuum depending on the prevailing atmospheric conditions, while the off-line wavelength operates at 828.287 nm. This laser transmitter has been incorporated into a DIAL instrument utilizing a 35.6 cm Schmidt-Cassegrain telescope and fiber coupled avalanche photodiode (APD operating in the photon counting mode. The performance of the DIAL instrument was demonstrated over a ten-day observation period. During this observation period, data from radiosondes were used to retrieve water vapor number density profiles for comparisons with the number density profiles retrieved from the DIAL data.

Catastrophic avalanches and methods of their control

Directory of Open Access Journals (Sweden)

N. A. Volodicheva

2014-01-01

Full Text Available Definition of such phenomenon as “catastrophic avalanche” is presented in this arti-cle. Several situations with releases of catastrophic avalanches in mountains of Caucasus, Alps, and Central Asia are investigated. Materials of snow-avalanche ob-servations performed since 1960s at the Elbrus station of the Lomonosov Moscow State University (Central Caucasus were used for this work. Complex-valued measures of engineering protection demonstrating different efficiencies are consid-ered.

Miniature silicon photodiodes for photon and electron radiation dosimetry in therapeutical applications

International Nuclear Information System (INIS)

Gilar, O.; Petr, I.

1986-01-01

The silicon diode is manufactured from P type silicon, the P layer is implanted with boron atoms and the N layer with phosphorus atoms. The diode dimensions are 2x2x0.2 mm. It is encased in elastic tissue-equivalent material. The electrodes are from an Al foil. The diode can be used as an in-vivo dosemeter in human body cavities. When irradiated, it supplies information on the instantaneous dose rate at a given point and on the dose cumulated over a certain time. Its current response to gamma radiation kerma rate is linear, directional sensitivity is isotropic. Temperature sensitivity of the photodiode is shown graphically for the range 20 to 40 degC, and the depth dose distribution measured in a water phantom is given for 6, 12 and 20 MeV photons and electrons. The diode energy dependence shows increased sensitivity to low-energy photons. (M.D.)

Ultrafast electrical control of a resonantly driven single photon source

International Nuclear Information System (INIS)

Cao, Y.; Bennett, A. J.; Ellis, D. J. P.; Shields, A. J.; Farrer, I.; Ritchie, D. A.

2014-01-01

We demonstrate generation of a pulsed stream of electrically triggered single photons in resonance fluorescence, by applying high frequency electrical pulses to a single quantum dot in a p-i-n diode under resonant laser excitation. Single photon emission was verified, with the probability of multiple photon emission reduced to 2.8%. We show that despite the presence of charge noise in the emission spectrum of the dot, resonant excitation acts as a “filter” to generate narrow bandwidth photons

Relation of the runaway avalanche threshold to momentum space topology

Science.gov (United States)

McDevitt, Christopher J.; Guo, Zehua; Tang, Xian-Zhu

2018-02-01

The underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accurately described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.

Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

Science.gov (United States)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-08-01

×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

Performance Analysis of Single Photon Avalanche Diode Underwater VLC System Using ARQ

KAUST Repository

Shafiqu, Taniya; Amin, Osama; Abdallah, Mohamed; Ansari, Imran Shafique; Alouini, Mohamed-Slim; Qaraqe, Khalid

2017-01-01

at the receiver side. Approximate packet error rate (PER) expressions are derived using Laguerre Gauss polynomial for a finite number of transmission. Next, the average energy efficiency and throughput are analyzed to account for the increased energy consumption

Active quenching circuit for a InGaAs single-photon avalanche diode

International Nuclear Information System (INIS)

Zheng Lixia; Wu Jin; Xi Shuiqing; Shi Longxing; Liu Siyang; Sun Weifeng

2014-01-01

We present a novel gated operation active quenching circuit (AQC). In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I–V characteristic measurement results of the detector. The circuit integrated with aROIC (readout integrated circuit) is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications. (semiconductor integrated circuits)

La Carte de Localisation Probable des Avalanches (CPLA

Directory of Open Access Journals (Sweden)

Gilles BORREL

1994-12-01

Full Text Available La Carte de Localisation Probable des Avalanches (CPLA indique l’enveloppe des limites extrêmes connues atteintes par les avalanches, ainsi que les travaux de protection associés. Il s’agit d’un document informatif et non d’une carte de risque. Depuis 1990, les données thématiques sont numérisées.

Impulse response measurement in the HgCdTe avalanche photodiode

Science.gov (United States)

Singh, Anand; Pal, Ravinder

2018-04-01

HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

Phase avalanches in near-adiabatic evolutions

International Nuclear Information System (INIS)

Vertesi, T.; Englman, R.

2006-01-01

In the course of slow, nearly adiabatic motion of a system, relative changes in the slowness can cause abrupt and high magnitude phase changes, ''phase avalanches,'' superimposed on the ordinary geometric phases. The generality of this effect is examined for arbitrary Hamiltonians and multicomponent (>2) wave packets and is found to be connected (through the Blaschke term in the theory of analytic signals) to amplitude zeros in the lower half of the complex time plane. Motion on a nonmaximal circle on the Poincare-sphere suppresses the effect. A spectroscopic transition experiment can independently verify the phase-avalanche magnitudes

IFKIS - a basis for managing avalanche risk in settlements and on roads in Switzerland

Directory of Open Access Journals (Sweden)

M. Bründl

2004-01-01

Full Text Available After the avalanche winter of 1999 in Switzerland, which caused 17 deaths and damage of over CHF 600 mill. in buildings and on roads, the project IFKIS, aimed at improving the basics of organizational measures (closure of roads, evacuation etc. in avalanche risk management, was initiated. The three main parts of the project were the development of a compulsory checklist for avalanche safety services, a modular education and training course program and an information system for safety services. The information system was developed in order to improve both the information flux between the national centre for avalanche forecasting, the Swiss Federal Institute for Snow and Avalanche Research SLF, and the local safety services on the one hand and the communication between avalanche safety services in the communities on the other hand. The results of this project make a valuable contribution to strengthening organizational measures in avalanche risk management and to closing the gaps, which became apparent during the avalanche winter of 1999. They are not restricted to snow avalanches but can also be adapted for dealing with other natural hazard processes and catastrophes.

Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array

International Nuclear Information System (INIS)

Li Yang; Liao Sheng-Kai; Liang Fu-Tian; Shen Qi; Liang Hao; Peng Cheng-Zhi

2016-01-01

Quantum random number generators adopting single photon detection have been restricted due to the non-negligible dead time of avalanche photodiodes (APDs). We propose a new approach based on an APD array to improve the generation rate of random numbers significantly. This method compares the detectors' responses to consecutive optical pulses and generates the random sequence. We implement a demonstration experiment to show its simplicity, compactness and scalability. The generated numbers are proved to be unbiased, post-processing free, ready to use, and their randomness is verified by using the national institute of standard technology statistical test suite. The random bit generation efficiency is as high as 32.8% and the potential generation rate adopting the 32 × 32 APD array is up to tens of Gbits/s. (paper)

Development of a dual-energy silicon X-ray diode and its application to gadolinium imaging

International Nuclear Information System (INIS)

Sato, Yuichi; Sato, Eiichi; Ehara, Shigeru; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya

2015-01-01

To perform dual-energy X-ray imaging, we developed a dual-energy silicon X-ray diode (DE-Si-XD) consisting of two ceramic-substrate silicon X-ray diodes (Si-XD) and a 0.2-mm-thick copper filter. The Si-XD is a high-sensitivity Si photodiode selected for detecting X-rays. In the front Si-XD, X-ray photons from an X-ray tube are directly detected. Because low-energy photons are absorbed by the front Si-XD and the filter, the average photon energy increases when the back Si-XD is used. In the front Si-XD, the photocurrents flowing through the Si-XD are converted into voltages and amplified using current–voltage and voltage–voltage (V–V) amplifiers. The output from the V–V amplifier is input to an analog-digital converter through an integrator for smoothing the voltage. The same amplification method is also used in the back Si-XD. Dual-energy computed tomography (DE–CT) is accomplished by repeated linear scans and rotations of the object, and two projection curves of the object are obtained simultaneously by linear scanning at a tube voltage of 90 kV and a current of 1.0 mA. In the DE–CT, the exposure time for obtaining a tomogram is 10 min with scan steps of 0.5 mm and rotation steps of 1.0°. Using gadolinium-based contrast media, energy subtraction was performed. - Highlights: • Dual-energy X-ray diode consists of two Si diodes and a Cu filter. • Low and high-energy X-rays are detected using front and back diodes. • Two-different-energy tomograms were easily obtained simultaneously. • Gd-K-edge CT was accomplished using the back diode. • Energy subtraction was performed easily to image a target object

Si light-emitting device in integrated photonic CMOS ICs

Science.gov (United States)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD), Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Leveraging Phase I SBIR successes, in Phase II, a single photon sensitive LIDAR receiver will be fabricated and delivered to NASA. In Phase I, high-gain,...

Saturable Absorption in 2D Ti3 C2 MXene Thin Films for Passive Photonic Diodes.

Science.gov (United States)

Dong, Yongchang; Chertopalov, Sergii; Maleski, Kathleen; Anasori, Babak; Hu, Longyu; Bhattacharya, Sriparna; Rao, Apparao M; Gogotsi, Yury; Mochalin, Vadym N; Podila, Ramakrishna

2018-03-01

MXenes comprise a new class of 2D transition metal carbides, nitrides, and carbonitrides that exhibit unique light-matter interactions. Recently, 2D Ti 3 CNT x (T x represents functional groups such as OH and F) was found to exhibit nonlinear saturable absorption (SA) or increased transmittance at higher light fluences, which is useful for mode locking in fiber-based femtosecond lasers. However, the fundamental origin and thickness dependence of SA behavior in MXenes remain to be understood. 2D Ti 3 C 2 T x thin films of different thicknesses are fabricated using an interfacial film formation technique to systematically study their nonlinear optical properties. Using the open aperture Z-scan method, it is found that the SA behavior in Ti 3 C 2 T x MXene arises from plasmon-induced increase in the ground state absorption at photon energies above the threshold for free carrier oscillations. The saturation fluence and modulation depth of Ti 3 C 2 T x MXene is observed to be dependent on the film thickness. Unlike other 2D materials, Ti 3 C 2 T x is found to show higher threshold for light-induced damage with up to 50% increase in nonlinear transmittance. Lastly, building on the SA behavior of Ti 3 C 2 T x MXenes, a Ti 3 C 2 T x MXene-based photonic diode that breaks time-reversal symmetry to achieve nonreciprocal transmission of nanosecond laser pulses is demonstrated. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Scintillating fiber tracking at high luminosities using Visible Light Photon counter readout

International Nuclear Information System (INIS)

Atac, M.

1995-11-01

This paper reviews the research work on the Visible Light Photon Counters (VLPC) that have been developed for the scintillating fiber tracking at high luminosity colliders and high rate fixed target experiments. The devices originated from the joint work between UCLA and Rockwell International Science Center. The VLPCs are capable of counting photons very efficiently down to a single photon level with high avalanche gain, producing pulses at very high rates with very short rise times. Due to small gain dispersions they can be used in counting photons with high quantum efficiencies, therefore they are excellent devices for charged particle tracking using small diameter scintillating plastic fibers. In this paper, fiber tracking for the CDF and D0 upgrades and a possible usage of the VLPC readout for the experiment E803 at Fermilab will be discussed

Post-glacial rock avalanches in the Obersee Valley, Glarner Alps, Switzerland

Science.gov (United States)

Nagelisen, Jan; Moore, Jeffrey R.; Vockenhuber, Christoph; Ivy-Ochs, Susan

2015-06-01

The geological record of prehistoric rock avalanches provides invaluable data for assessing the hazard posed by these rare but destructive mass movements. Here we investigate two large rock avalanches in the Obersee valley of the Glarner Alps, Switzerland, providing detailed mapping of landslide and related Quaternary phenomena, revised volume estimates for each event, and surface exposure dating of rock avalanche deposits. The Rautispitz rock avalanche originated from the southern flank of the Obersee valley, releasing approximately 91 million m3 of limestone on steeply-dipping bedding planes. Debris had maximum horizontal travel distance of ~ 5000 m, a fahrboeschung angle (relating fall height to length) of 18°, and was responsible for the creation of Lake Obersee; deposits are more than 130 m thick in places. The Platten rock avalanche encompassed a source volume of 11 million m3 sliding from the northern flank of the Obersee valley on similar steeply-dipping limestone beds (bedrock forms a syncline under the valley). Debris had a maximum horizontal travel distance of 1600 m with a fahrboeschung angle of 21°, and is more than 80 m thick in places. Deposits of the Platten rock avalanche are superposed atop those from the Rautispitz event at the end of the Obersee valley where they dam Lake Haslensee. Runout for both events was simulated using the dynamic analysis code DAN3D; results showed excellent match to mapped deposit extents and thickness and helped confirm the hypothesized single-event failure scenarios. 36Cl cosmogenic nuclide surface exposure dating of 13 deposited boulders revealed a Younger Dryas age of 12.6 ± 1.0 ka for the Rautispitz rock avalanche and a mid-Holocene age of 6.1 ± 0.8 ka for the Platten rock avalanche. A seismological trigger is proposed for the former event due to potentially correlated turbidite deposits in nearby Lake Zurich.

125 GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit

Science.gov (United States)

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-01

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

Forecasting of wet snow avalanche activity: Proof of concept and operational implementation

Science.gov (United States)

Gobiet, Andreas; Jöbstl, Lisa; Rieder, Hannes; Bellaire, Sascha; Mitterer, Christoph

2017-04-01

State-of-the-art tools for the operational assessment of avalanche danger include field observations, recordings from automatic weather stations, meteorological analyses and forecasts, and recently also indices derived from snowpack models. In particular, an index for identifying the onset of wet-snow avalanche cycles (LWCindex), has been demonstrated to be useful. However, its value for operational avalanche forecasting is currently limited, since detailed, physically based snowpack models are usually driven by meteorological data from automatic weather stations only and have therefore no prognostic ability. Since avalanche risk management heavily relies on timely information and early warnings, many avalanche services in Europe nowadays start issuing forecasts for the following days, instead of the traditional assessment of the current avalanche danger. In this context, the prognostic operation of detailed snowpack models has recently been objective of extensive research. In this study a new, observationally constrained setup for forecasting the onset of wet-snow avalanche cycles with the detailed snow cover model SNOWPACK is presented and evaluated. Based on data from weather stations and different numerical weather prediction models, we demonstrate that forecasts of the LWCindex as indicator for wet-snow avalanche cycles can be useful for operational warning services, but is so far not reliable enough to be used as single warning tool without considering other factors. Therefore, further development currently focuses on the improvement of the forecasts by applying ensemble techniques and suitable post processing approaches to the output of numerical weather prediction models. In parallel, the prognostic meteo-snow model chain is operationally used by two regional avalanche warning services in Austria since winter 2016/2017 for the first time. Experiences from the first operational season and first results from current model developments will be reported.

Application of statistical and dynamics models for snow avalanche hazard assessment in mountain regions of Russia

Science.gov (United States)

Turchaninova, A.

2012-04-01

The estimation of extreme avalanche runout distances, flow velocities, impact pressures and volumes is an essential part of snow engineering in mountain regions of Russia. It implies the avalanche hazard assessment and mapping. Russian guidelines accept the application of different avalanche models as well as approaches for the estimation of model input parameters. Consequently different teams of engineers in Russia apply various dynamics and statistical models for engineering practice. However it gives more freedom to avalanche practitioners and experts but causes lots of uncertainties in case of serious limitations of avalanche models. We discuss these problems by presenting the application results of different well known and widely used statistical (developed in Russia) and avalanche dynamics models for several avalanche test sites in the Khibini Mountains (The Kola Peninsula) and the Caucasus. The most accurate and well-documented data from different powder and wet, big rare and small frequent snow avalanche events is collected from 1960th till today in the Khibini Mountains by the Avalanche Safety Center of "Apatit". This data was digitized and is available for use and analysis. Then the detailed digital avalanche database (GIS) was created for the first time. It contains contours of observed avalanches (ESRI shapes, more than 50 years of observations), DEMs, remote sensing data, description of snow pits, photos etc. Thus, the Russian avalanche data is a unique source of information for understanding of an avalanche flow rheology and the future development and calibration of the avalanche dynamics models. GIS database was used to analyze model input parameters and to calibrate and verify avalanche models. Regarding extreme dynamic parameters the outputs using different models can differ significantly. This is unacceptable for the engineering purposes in case of the absence of the well-defined guidelines in Russia. The frequency curves for the runout distance

High voltage short plus generation based on avalanche circuit

International Nuclear Information System (INIS)

Hu Yuanfeng; Yu Xiaoqi

2006-01-01

Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera. The output voltage ranges 1.2 KV into 50 ohm load. The rise time of the circuit is less than 3 ns. (authors)

Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures.

Science.gov (United States)

Chen, Xuanhu; Xu, Yang; Zhou, Dong; Yang, Sen; Ren, Fang-Fang; Lu, Hai; Tang, Kun; Gu, Shulin; Zhang, Rong; Zheng, Youdou; Ye, Jiandong

2017-10-25

The metastable α-phase Ga 2 O 3 is an emerging material for developing solar-blind photodetectors and power electronic devices toward civil and military applications. Despite its superior physical properties, the high quality epitaxy of metastable phase α-Ga 2 O 3 remains challenging. To this end, single crystalline α-Ga 2 O 3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga 2 O 3 /ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated. The device exhibits self-powered functions with a dark current lower than 1 pA, a UV/visible rejection ratio of 10 3 and a detectivity of 9.66 × 10 12 cm Hz 1/2 W -1 . Dual responsivity bands with cutoff wavelengths at 255 and 375 nm are observed with their peak responsivities of 0.50 and 0.071 A W -1 at -5 V, respectively. High photoconductive gain at low bias is governed by a barrier lowing effect at the Au/Ga 2 O 3 and Ga 2 O 3 /ZnO heterointerfaces. The device also allows avalanche multiplication processes initiated by pure electron and hole injections under different illumination conditions. High avalanche gains over 10 3 and a low ionization coefficient ratio of electrons and holes are yielded, leading to a total gain over 10 5 and a high responsivity of 1.10 × 10 4 A W -1 . Such avalanche heterostructures with ultrahigh gains and bias-tunable UV detecting functionality hold promise for developing high performance solar-blind photodetectors.

Photon Factory activity report, 1990

International Nuclear Information System (INIS)

1991-01-01

The Photon Factory has grown at a considerable rate, and 600 experiments are carried out in 1991, while the number of users is now 2300 including about 500 from industrial sectors. The use of synchrotron radiation increased from fundamental research to industrial development. The development at the Photon Factory is supported by the capability of the accelerators. At present, the 2.5 GeV PF ring is operated with positrons at the initial beam current of 350 mA. The total operation time was 3500 hours in the fiscal year 1990. The development of an avalanche mode photodiode, the observation of quantum beat in the experiment of nuclear Bragg scattering, the measurement of photo-electron and photo-ion spectroscopy were carried out. The conversion of TRISTAN main ring to an ultrahigh brilliance and high coherence source is planned for the future. The annual PF Symposium was held, and Professor H. Winick gave the lecture 'Ultrahigh brightness and coherent radiation from large storage rings'. In this report, the outline of the Photon Factory and the activities in Divisions of Injector Linac, Light Source and Instrumentation are described. (K.I.)

Electric field distribution and simulation of avalanche formation due ...

Indian Academy of Sciences (India)

Electric field distributions and their role in the formation of avalanche due to the passage of heavy ions in parallel grid avalanche type wire chamber detectors are evaluated using a Monte Carlo simulation. The relative merits and demerits of parallel and crossed wire grid configurations are studied. It is found that the crossed ...

A new web-based system to improve the monitoring of snow avalanche hazard in France

Science.gov (United States)

Bourova, Ekaterina; Maldonado, Eric; Leroy, Jean-Baptiste; Alouani, Rachid; Eckert, Nicolas; Bonnefoy-Demongeot, Mylene; Deschatres, Michael

2016-05-01

Snow avalanche data in the French Alps and Pyrenees have been recorded for more than 100 years in several databases. The increasing amount of observed data required a more integrative and automated service. Here we report the comprehensive web-based Snow Avalanche Information System newly developed to this end for three important data sets: an avalanche chronicle (Enquête Permanente sur les Avalanches, EPA), an avalanche map (Carte de Localisation des Phénomènes d'Avalanche, CLPA) and a compilation of hazard and vulnerability data recorded on selected paths endangering human settlements (Sites Habités Sensibles aux Avalanches, SSA). These data sets are now integrated into a common database, enabling full interoperability between all different types of snow avalanche records: digitized geographic data, avalanche descriptive parameters, eyewitness reports, photographs, hazard and risk levels, etc. The new information system is implemented through modular components using Java-based web technologies with Spring and Hibernate frameworks. It automates the manual data entry and improves the process of information collection and sharing, enhancing user experience and data quality, and offering new outlooks to explore and exploit the huge amount of snow avalanche data available for fundamental research and more applied risk assessment.

Evaluation and operationalization of a novel forest detrainment modeling approach for computational snow avalanche simulation

Science.gov (United States)

Teich, M.; Feistl, T.; Fischer, J.; Bartelt, P.; Bebi, P.; Christen, M.; Grêt-Regamey, A.

2013-12-01

Two-dimensional avalanche simulation software operating in three-dimensional terrain are widely used for hazard zoning and engineering to predict runout distances and impact pressures of snow avalanche events. Mountain forests are an effective biological protection measure; however, the protective capacity of forests to decelerate or even to stop avalanches that start within forested areas or directly above the treeline is seldom considered in this context. In particular, runout distances of small- to medium-scale avalanches are strongly influenced by the structural conditions of forests in the avalanche path. This varying decelerating effect has rarely been addressed or implemented in avalanche simulation. We present an evaluation and operationalization of a novel forest detrainment modeling approach implemented in the avalanche simulation software RAMMS. The new approach accounts for the effect of forests in the avalanche path by detraining mass, which leads to a deceleration and runout shortening of avalanches. The extracted avalanche mass caught behind trees stops immediately and, therefore, is instantly subtracted from the flow and the momentum of the stopped mass is removed from the total momentum of the avalanche flow. This relationship is parameterized by the empirical detrainment coefficient K [Pa] which accounts for the braking power of different forest types per unit area. To define K dependent on specific forest characteristics, we simulated 40 well-documented small- to medium-scale avalanches which released in and ran through forests with varying K-values. Comparing two-dimensional simulation results with one-dimensional field observations for a high number of avalanche events and simulations manually is however time consuming and rather subjective. In order to process simulation results in a comprehensive and standardized way, we used a recently developed automatic evaluation and comparison method defining runout distances based on a pressure

Rock avalanches clusters along the northern Chile coastal scarp

Science.gov (United States)

Crosta, G. B.; Hermanns, R. L.; Dehls, J.; Lari, S.; Sepulveda, S.

2017-07-01

Rock avalanche clusters can be relevant indicators of the evolution of specific regions. They can be used to define: the type and intensity of triggering events, their recurrence and potential probability of occurrence, the progressive damage of the rock mass, the mechanisms of transport and deposition, as well as the environmental conditions at the time of occurrence. This paper tackles these subjects by analyzing two main clusters of rock avalanches (each event between 0.6 and 30 Mm3), separated by few kilometers and located along the coastal scarp of Northern Chile, south of Iquique. It lies, hence, within a seismic area characterized by a long seismic gap that ended on April 1st, 2014 with a Mw 8.2 earthquake. The scar position, high along the coastal cliff, supports seismic triggering for these clusters. The deposits' relative positions are used to obtain the sequence of rock avalanching events for each cluster. The progressive decrease of volume in the sequence of rock avalanches forming each cluster fits well the theoretical models for successive slope failures. These sequences seem to agree with those derived by dating the deposits with ages spanning between 4 kyr and 60 kyr. An average uplift rate of 0.2 mm/yr in the last 40 kyr is estimated for the coastal plain giving a further constraint to the rock avalanche deposition considering the absence of reworking of the deposits. Volume estimates and datings allow the estimation of an erosion rate contribution of about 0.098-0.112 mm km- 2 yr- 1 which is well comparable to values presented in the literature for earthquake induced landslides. We have carried out numerical modeling in order to analyze the mobility of the rock avalanches and examine the environmental conditions that controlled the runout. In doing so, we have considered the sequence of individual rock avalanches within the specific clusters, thus including in the models the confining effect caused by the presence of previous deposits. Bingham

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

Science.gov (United States)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Evaluation of off-axis wedge correction factor using diode dosimeters for estimation of delivered dose in external radiotherapy

International Nuclear Information System (INIS)

Allahverdi, Mahmoud; Shirazi, Alireza; Geraily, Ghazale; Mohammadkarim, Alireza; Esfehani, Mahbod; Nedaie, Hasanali

2012-01-01

An in vivo dosimetry system, using p-type diode dosimeters, was characterized for clinical applications of treatment machines ranging in megavoltage energies. This paper investigates two different models of diodes for externally wedged beams and explains a new algorithm for the calculation of the target dose at various tissue depths in external radiotherapy. The values of off-axis wedge correction factors were determined at two different positions in the wedged (toward the thick and thin edges) and in the non-wedged directions on entrance and exit surfaces of a polystyrene phantom in 60 Co and 6 MV photon beams. Depth transmission was defined on the entrance and exit surfaces to obtain the off-axis wedge correction factor at any depth. As the sensitivity of the diodes depends on physical characteristics (field size, source-skin distance (SSD), thickness, backscatter), correction factors were applied to the diode reading when measuring conditions different from calibration situations. The results indicate that needful correction factors for 60 Co wedged photons are usually larger than those for 6 MV wedged photon beams. In vivo dosimetry performed with the proposed algorithms at externally wedged beams has negligible probable errors (less than 0.5%) and is a reliable method for patient dose control. (author)

Evaluation of off-axis wedge correction factor using diode dosimeters for estimation of delivered dose in external radiotherapy

Directory of Open Access Journals (Sweden)

Mahmoud Allahverdi

2012-01-01

Full Text Available An in vivo dosimetry system, using p-type diode dosimeters, was characterized for clinical applications of treatment machines ranging in megavoltage energies. This paper investigates two different models of diodes for externally wedged beams and explains a new algorithm for the calculation of the target dose at various tissue depths in external radiotherapy. The values of off-axis wedge correction factors were determined at two different positions in the wedged (toward the thick and thin edges and in the non-wedged directions on entrance and exit surfaces of a polystyrene phantom in 60 Co and 6 MV photon beams. Depth transmission was defined on the entrance and exit surfaces to obtain the off-axis wedge correction factor at any depth. As the sensitivity of the diodes depends on physical characteristics [field size, source-skin distance (SSD, thickness, backscatter], correction factors were applied to the diode reading when measuring conditions different from calibration situations . The results indicate that needful correction factors for 60 Co wedged photons are usually larger than those for 6 MV wedged photon beams. In vivo dosimetry performed with the proposed algorithms at externally wedged beams has negligible probable errors (less than 0.5% and is a reliable method for patient dose control.

Mis-diode as a low-energy X- and γ-ray spectrometer

International Nuclear Information System (INIS)

Konova, A.

1980-01-01

Considered are main peculiarities of apparata called MIS-diods having metal-thin isolating semiconductor structure and used as detectors of low-energy gamma and X-ray radiation. Discussed are advantages of tunnel MIS-diods based on non-primitive carriers. Presented are results of experimental measurements carried out using system of metal-silion oxide-silicon with the oxide layer width of 10-25 A (silicon with acceptor concentration of 10 19 m -3 ). Data presented show that MIS-diods can be considered as diods with p-n - transition in which n + - region is an inversion layer near the semiconductor surface, and further a leant region is situated. When voltage is applied only the depth of the leant region changes. In case of high quality diods the leakage currents are very small. Results of the investigation performed show that MIS-diods with oxide film wiolth of 10-22 A (the film covering p-silicon with high specific resistance) can be used as spectrometers of low-energy photons having particularly high energetic solution at room temperature. An advantage of new diods is the reverse current significantly lower in comparison with that of usual detectors with the Schottky barrier

Using stereo satellite imagery to account for ablation, entrainment, and compaction in volume calculations for rock avalanches on Glaciers: Application to the 2016 Lamplugh Rock Avalanche in Glacier Bay National Park, Alaska

Science.gov (United States)

Bessette-Kirton, Erin; Coe, Jeffrey A.; Zhou, Wendy

2018-01-01

The use of preevent and postevent digital elevation models (DEMs) to estimate the volume of rock avalanches on glaciers is complicated by ablation of ice before and after the rock avalanche, scour of material during rock avalanche emplacement, and postevent ablation and compaction of the rock avalanche deposit. We present a model to account for these processes in volume estimates of rock avalanches on glaciers. We applied our model by calculating the volume of the 28 June 2016 Lamplugh rock avalanche in Glacier Bay National Park, Alaska. We derived preevent and postevent 2‐m resolution DEMs from WorldView satellite stereo imagery. Using data from DEM differencing, we reconstructed the rock avalanche and adjacent surfaces at the time of occurrence by accounting for elevation changes due to ablation and scour of the ice surface, and postevent deposit changes. We accounted for uncertainties in our DEMs through precise coregistration and an assessment of relative elevation accuracy in bedrock control areas. The rock avalanche initially displaced 51.7 ± 1.5 Mm3 of intact rock and then scoured and entrained 13.2 ± 2.2 Mm3 of snow and ice during emplacement. We calculated the total deposit volume to be 69.9 ± 7.9 Mm3. Volume estimates that did not account for topographic changes due to ablation, scour, and compaction underestimated the deposit volume by 31.0–46.8 Mm3. Our model provides an improved framework for estimating uncertainties affecting rock avalanche volume measurements in glacial environments. These improvements can contribute to advances in the understanding of rock avalanche hazards and dynamics.

Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

Directory of Open Access Journals (Sweden)

Khalil Jradi

2014-12-01

Full Text Available Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD.

Radiation-Resistant Photon-Counting Detector Package Providing Sub-ps Stability for Laser Time Transfer in Space

Science.gov (United States)

Prochzaka, Ivan; Kodat, Jan; Blazej, Josef; Sun, Xiaoli (Editor)

2015-01-01

We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.

Intermittent flow under constant forcing: Acoustic emission from creep avalanches

Science.gov (United States)

Salje, Ekhard K. H.; Liu, Hanlong; Jin, Linsen; Jiang, Deyi; Xiao, Yang; Jiang, Xiang

2018-01-01

While avalanches in field driven ferroic systems (e.g., Barkhausen noise), domain switching of martensitic nanostructures, and the collapse of porous materials are well documented, creep avalanches (avalanches under constant forcing) were never observed. Collapse avalanches generate particularly large acoustic emission (AE) signals and were hence chosen to investigate crackling noise under creep conditions. Piezoelectric SiO2 has a strong piezoelectric response even at the nanoscale so that we chose weakly bound SiO2 spheres in natural sandstone as a representative for the study of avalanches under time-independent, constant force. We found highly non-stationary crackling noise with four activity periods, each with power law distributed AE emission. Only the period before the final collapse shows the mean field behavior (ɛ near 1.39), in agreement with previous dynamic measurements at a constant stress rate. All earlier event periods show collapse with larger exponents (ɛ = 1.65). The waiting time exponents are classic with τ near 2.2 and 1.32. Creep data generate power law mixing with "effective" exponents for the full dataset with combinations of mean field and non-mean field regimes. We find close agreement with the predicted time-dependent fiber bound simulations, including events and waiting time distributions. Båth's law holds under creep conditions.

Measurement of temperature profiles in process-applications using fibre-optical methods; Prozessgeeignete Temperaturprofilmessungen mit faseroptischen Methoden

Energy Technology Data Exchange (ETDEWEB)

Seefeld, P. [Endress und Hauser Wetzer GmbH und Co.KG, Nesselwang (Germany)

2008-07-01

Fibre-optical temperature measuring methods are offering an approach to detect temperature profiles. According to the NAMUR-Technology-Roadmap the detection of temperature profiles is representing an increased benefit. Intrinsic fibre-optical temperature measuring techniques are presented, known as OTDRmethod (Optical tine domain reflectometry) facilitating a distributed temperature measurement method that allows a resolution in the range of decimetres. For the purpose of such applications a suitable photoncounting device comprises mechanical robust fibre-optical components, 3 db Coupler, referenced Laser- Diode, Y-Coupler with integrated band-filter and APD (Avalanche Diode) used in a detection module. A VHDL-coded FBGA-board provides a basic control-device for - a Laser-Driver to generate adjustable exiting-pulses in the range of nanoseconds at rates up to 100 kHz. - a Photon-Counting module with a minimum opening width in the range of one nanosecond - that permits the co-addition of the photon-counts derived from the spectral resolved Stokes and Anti-Stokes band. (orig.)

Photon Counting System for High-Sensitivity Detection of Bioluminescence at Optical Fiber End.

Science.gov (United States)

Iinuma, Masataka; Kadoya, Yutaka; Kuroda, Akio

2016-01-01

The technique of photon counting is widely used for various fields and also applicable to a high-sensitivity detection of luminescence. Thanks to recent development of single photon detectors with avalanche photodiodes (APDs), the photon counting system with an optical fiber has become powerful for a detection of bioluminescence at an optical fiber end, because it allows us to fully use the merits of compactness, simple operation, highly quantum efficiency of the APD detectors. This optical fiber-based system also has a possibility of improving the sensitivity to a local detection of Adenosine triphosphate (ATP) by high-sensitivity detection of the bioluminescence. In this chapter, we are introducing a basic concept of the optical fiber-based system and explaining how to construct and use this system.

Stellar Winds and Dust Avalanches in the AU Mic Debris Disk

Energy Technology Data Exchange (ETDEWEB)

Chiang, Eugene; Fung, Jeffrey, E-mail: echiang@astro.berkeley.edu, E-mail: jeffrey.fung@berkeley.edu [Department of Astronomy, University of California at Berkeley, Campbell Hall, Berkeley, CA 94720-3411 (United States)

2017-10-10

We explain the fast-moving, ripple-like features in the edge-on debris disk orbiting the young M dwarf AU Mic. The bright features are clouds of submicron dust repelled by the host star’s wind. The clouds are produced by avalanches: radial outflows of dust that gain exponentially more mass as they shatter background disk particles in collisional chain reactions. The avalanches are triggered from a region a few au across—the “avalanche zone”—located on AU Mic’s primary “birth” ring at a true distance of ∼35 au from the star but at a projected distance more than a factor of 10 smaller: the avalanche zone sits directly along the line of sight to the star, on the side of the ring nearest Earth, launching clouds that disk rotation sends wholly to the southeast, as observed. The avalanche zone marks where the primary ring intersects a secondary ring of debris left by the catastrophic disruption of a progenitor up to Varuna in size, less than tens of thousands of years ago. Only where the rings intersect are particle collisions sufficiently violent to spawn the submicron dust needed to seed the avalanches. We show that this picture works quantitatively, reproducing the masses, sizes, and velocities of the observed escaping clouds. The Lorentz force exerted by the wind’s magnetic field, whose polarity reverses periodically according to the stellar magnetic cycle, promises to explain the observed vertical undulations. The timescale between avalanches, about 10 yr, might be set by time variability of the wind mass loss rate or, more speculatively, by some self-regulating limit cycle.

SPAD electronics for high-speed quantum communications

Science.gov (United States)

Bienfang, Joshua C.; Restelli, Alessandro; Migdall, Alan

2011-01-01

We discuss high-speed electronics that support the use of single-photon avalanche diodes (SPADs) in gigahertz singlephoton communications systems. For InGaAs/InP SPADs, recent work has demonstrated reduced afterpulsing and count rates approaching 500 MHz can be achieved with gigahertz periodic-gating techniques designed to minimize the total avalanche charge to less than 100 fC. We investigate afterpulsing in this regime and establish a connection to observations using more conventional techniques. For Si SPADs, we report the benefits of improved timing electronics that enhance the temporal resolution of Si SPADs used in a free-space quantum key distribution (QKD) system operating in the GHz regime. We establish that the effects of count-rate fluctuations induced by daytime turbulent scintillation are significantly reduced, benefitting the performance of the QKD system.

Time lapse photography as an approach to understanding glide avalanche activity

Science.gov (United States)

Hendrikx, Jordy; Peitzsch, Erich H.; Fagre, Daniel B.

2012-01-01

Avalanches resulting from glide cracks are notoriously difficult to forecast, but are a recurring problem for numerous avalanche forecasting programs. In some cases glide cracks are observed to open and then melt away in situ. In other cases, they open and then fail catastrophically as large, full-depth avalanches. Our understanding and management of these phenomena are currently limited. It is thought that an increase in the rate of snow gliding occurs prior to full-depth avalanche activity so frequent observation of glide crack movement can provide an index of instability. During spring 2011 in Glacier National Park, Montana, USA, we began an approach to track glide crack avalanche activity using a time-lapse camera focused on a southwest facing glide crack. This crack melted in-situ without failing as a glide avalanche, while other nearby glide cracks on north through southeast aspects failed. In spring 2012, a camera was aimed at a large and productive glide crack adjacent to the Going to the Sun Road. We captured three unique glide events in the field of view. Unfortunately, all of them either failed very quickly, or during periods of obscured view, so measurements of glide rate could not be obtained. However, we compared the hourly meteorological variables during the period of glide activity to the same variables prior to glide activity. The variables air temperature, relative humidity, air pressure, incoming and reflected long wave radiation, SWE, total precipitation, and snow depth were found to be statistically different for our cases examined. We propose that these are some of the potential precursors for glide avalanche activity, but do urge caution in their use, due to the simple approach and small data set size. It is hoped that by introducing a workable method to easily record glide crack movement, combined with ongoing analysis of the associated meteorological data, we will improve our understanding of when, or if, glide avalanche activity will ensue.

Resonance ionization mass spectrometry using tunable diode lasers

International Nuclear Information System (INIS)

Shaw, R.W.; Young, J.P.; Smith, D.H.

1990-01-01

Tunable semiconductor diode lasers will find many important applications in atomic spectroscopy. They exhibit the desirable attributes of lasers: narrow bandwidth, tunability, and spatial coherence. At the same time, they possess few of the disadvantages of other tunable lasers. They require no alignment, are simple to operate, and are inexpensive. Practical laser spectroscopic instruments can be envisioned. The authors have applied diode lasers to resonance ionization mass spectrometry (RIMS) of some of the lanthanide elements. Sub-Doppler resolution spectra have been recorded and have been used for atomic hyperfine structure analysis. Isotopically-selective ionization has been accomplished, even in cases where photons from a broadband dye laser are part of the overall ionization process and where the isotopic spectral shift is very small. A convenient RIMS instrument for isotope ratio measurements that employs only diode lasers, along with electric field ionization, should be possible

A new design of pulsed laser diode driver system for multistate quantum key distribution

Science.gov (United States)

Abdullah, M. S.; Jamaludin, M. Z.; Witjaksono, G.; Mokhtar, M. H. H.

2011-07-01

In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes' life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.

Avalanches and plastic flow in crystal plasticity: an overview

Science.gov (United States)

Papanikolaou, Stefanos; Cui, Yinan; Ghoniem, Nasr

2018-01-01

Crystal plasticity is mediated through dislocations, which form knotted configurations in a complex energy landscape. Once they disentangle and move, they may also be impeded by permanent obstacles with finite energy barriers or frustrating long-range interactions. The outcome of such complexity is the emergence of dislocation avalanches as the basic mechanism of plastic flow in solids at the nanoscale. While the deformation behavior of bulk materials appears smooth, a predictive model should clearly be based upon the character of these dislocation avalanches and their associated strain bursts. We provide here a comprehensive overview of experimental observations, theoretical models and computational approaches that have been developed to unravel the multiple aspects of dislocation avalanche physics and the phenomena leading to strain bursts in crystal plasticity.

La carte de localisation des phénomènes d'avalanche (CLPA : enjeux et perspectives The Localization Map of Avalanche Phenomena (CLPA in French: stakes and prospects

Directory of Open Access Journals (Sweden)

Mylène Bonnefoy, Gilles Borrel, Didier Richard, Laurent Bélanger et Mohamed Naaim

2010-09-01

Full Text Available Après presque quarante ans d’existence, la carte de localisation des phénomènes d'avalanche (CLPA constitue aujourd’hui un outil incontournable pour la prise en compte du risque d’avalanche dans l’aménagement et la gestion des territoires de montagne. Pour optimiser la sécurité des zones urbanisées, ce dispositif a su se rénover par une mise à jour régulière et étendue des données et l'étude de nouvelles zones, mais aussi par une meilleure diffusion auprès des opérationnels et du public concernés. Les auteurs nous rappellent ici l'évolution du fonctionnement de la CLPA et l'intérêt d'élargir la valorisation de ses données dans de nouveaux outils scientifiques.The Localization Map of Avalanche Phenomena (CLPA in French was created in 1971 as a response to the deadly avalanche occurred in Val d’Isère (February 1970, 39 persons killed. The aim is to inventory and to memorize areas where avalanches occurred in the past in order to keep in memory precisely greatest limits of those avalanches. The CLPA was rapidly considered as an essential element for developing plan in mountain areas. After the other catastrophic avalanche, which occurred in the Montroc Village (Chamonix in February 1999, it was recommended “the mutual valuation of the EPA and the CLPA integrated into an information system containing the information on avalanches and the information on the other natural risks in mountain”. The ministry in charge of environment decided therefore to continue and to modernize the CLPA, mission that was assigned to the Cemagref with the ONF collaboration. This modernization was based on the end of maps and testimonies records digitizing, on the compilation of summary notes concerning main avalanches information in reference to a mountain massif, on the institution of a durable updating of the map and on the possibility of having all information on line on the website www.avalanches.fr. Information recorded in the

THEORY AND PRACTICE OF INDIVIDUAL SNOW AVALANCHE RISK ASSESSMENT IN THE RUSSIAN ARCTIC

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Aleksandr Shnyparkov

2012-01-01

Full Text Available In recent years, the Government of the Russian Federation considerably increased attention to the exploitation of the Russian Arctic territories. Simultaneously, the evaluation of snow avalanches danger was enhanced with the aim to decrease fatalities and reduce economic losses. However, it turned out that solely reporting the degree of avalanche danger is not sufficient. Instead, quantitative information on probabilistic parameters of natural hazards, the characteristics of their effects on the environment and possibly resulting losses is increasingly needed. Such information allows for the estimation of risk, including risk related to snow avalanches. Here, snow avalanche risk is quantified for the Khibiny Mountains, one of the most industrialized parts of the Russian Arctic: Major parts of the territory have an acceptable degree of individual snow avalanche risk (<1×10-6. The territories with an admissible (10-4–10-6 or unacceptable (>1×10-4 degree of individual snow avalanche risk (0.5 and 2% of the total area correspond to the Southeast of the Khibiny Mountains where settlements and mining industries are situated. Moreover, due to an increase in winter tourism, some traffic infrastructure is located in valleys with an admissible or unacceptable degree of individual snow avalanches risk.

High pressure pulsed avalanche discharges: Scaling of required preionization rate for homogeneity

International Nuclear Information System (INIS)

Brenning, N.; Axnaes, I.; Nilsson, J.O.; Eninger, J.E.

1994-01-01

Homogeneous high-pressure discharges can be formed by pulsed avalanche breakdown, provided that the individual avalanche heads have diffused to a large enough radius to overlap before streamer breakdown occurs. The overlap condition can be met by using an external mechanism to preionize the neutral gas, e.g., x-rays or uv radiation. There are several scenarios, (1) to preionize the gas, and then trigger the discharge by the sudden application of an electric field, (2) to apply an overvoltage over the discharge and trigger the discharge by external ionization, or (3) to have a continuous rate of external ionization and let the E field rise, with a comparatively long time constant τ, across the breakdown value (E/n) 0 . The authors here study the last of these scenarios, which gives a very efficient use of the preionization source because the avalanche startpoint can accumulate during the pre-avalanche phase. The authors have found that the required avalanche startpoint density N st.p , defined as the density of individual single, or clusters of, electrons at the time when the electric field crosses the breakdown value, scales with pressure and rise time as N st.p ∝ p 21/4 τ -3/4 . This pressure scaling disagrees with the p 3/2 scaling found by Levatter and Lin (J. Appl. Phys. 51(1), 210), while the rise time scaling agrees satisfactorily with their results. For an E field which rises slowly across the breakdown value, the pre-avalanche accumulation of electrons must be taken into account, as well as the fact that the density n e of free electrons becomes larger than the density N st.p of independent avalanche heads: when electron impact ionization closely balances attachment, individual electrons are replaced by clusters of electrons which are too close to form individual avalanche heads

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Science.gov (United States)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

A digital silicon photomultiplier with multiple time-to-digital converters

Energy Technology Data Exchange (ETDEWEB)

Garutti, Erika [University Hamburg (Germany); Silenzi, Alessandro [DESY, Hamburg (Germany); Xu, Chen [DESY, Hamburg (Germany); University Hamburg (Germany)

2013-07-01

A silicon photomultiplier (SiPM) with pixel level signal digitization and column-wise connected time-to-digital converters (TDCs) has been developed for an endoscopic Positron Emission Tomography (PET) detector. A digital SiPM has pixels consist of a single photon avalanche diode (SPAD) and circuit elements to optimize overall dark counts and temporal response. Compared with conventional analog SiPM, digital SiPM's direct signal route from SPAD to TDC improves single photon time resolution. In addition, using multiple TDCs can perform the statistical estimation of the time-of-arrival in multiple photon detection case such as readout of scintillation crystals. Characterization measurements of the prototype digital SiPM and a Monte-Carlo simulation to predict the timing performance of the PET detector are shown.

Behaviour of large-area avalanche photodiodes under intense magnetic fields for VUV- visible- and X-ray photon detection

International Nuclear Information System (INIS)

Fernandes, L.M.P.; Antognini, A.; Boucher, M.; Conde, C.A.N.; Huot, O.; Knowles, P.; Kottmann, F.; Ludhova, L.; Mulhauser, F.; Pohl, R.; Schaller, L.A.; Santos, J.M.F. dos; Taqqu, D.; Veloso, J.F.C.A.

2003-01-01

The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field

Study of micro pixel photon counters for a high granularity scintillator-based hadron calorimeter

International Nuclear Information System (INIS)

D'Ascenzo, N.; Eggemann, A.; Garutti, E.

2007-11-01

A new Geiger mode avalanche photodiode, the Micro Pixel Photon Counter (MPPC), was recently released by Hamamatsu. It has a high photo-detection efficiency in the 420 nm spectral region. This product can represent an elegant candidate for the design of a high granularity scintillator based hadron calorimeter for the International Linear Collider. In fact, the direct readout of the blue scintillation photons with a MPPC is a feasible techological solution. The readout of a plastic scintillator by a MPPC, both mediated by the traditional wavelength shifting fiber, and directly coupled, has been systematically studied. (orig.)

Stretched exponentials and power laws in granular avalanching

Science.gov (United States)

Head, D. A.; Rodgers, G. J.

1999-02-01

We introduce a model for granular surface flow which exhibits both stretched exponential and power law avalanching over its parameter range. Two modes of transport are incorporated, a rolling layer consisting of individual particles and the overdamped, sliding motion of particle clusters. The crossover in behaviour observed in experiments on piles of rice is attributed to a change in the dominant mode of transport. We predict that power law avalanching will be observed whenever surface flow is dominated by clustered motion.

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-01-01

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

Multiple-Event, Single-Photon Counting Imaging Sensor

Science.gov (United States)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Photonic effects in microstructured conjugated polymer films and light emitting diodes

International Nuclear Information System (INIS)

Matterson, B.J.

2002-03-01

This thesis reports an investigation into the photonic effects caused by wavelength scale microstructure patterned onto films of conjugated polymers. The efficiency of light emitting diodes (LEDs) made from conjugated polymers is limited in part by the trapping of light into waveguide modes caused by the high refractive index of these materials. Waveguide modes in films of poly(p,-phenylene vinylene) (PPV) and poly(2-methoxy, 5-(2'ethylhexyloxy)-p-phenylene vinylene) (MEH-PPV) are analysed and the refractive index of these materials is calculated. The photoluminescence of conjugated polymer films that have been spun onto textured substrates is analysed. It is found that the photoluminescence quantum yield of a film spun onto a substrate inscribed with a grating is increased. It is also found that the photoluminescence spectrum of the film is dramatically altered and varies substantially with viewing angle. The features in the spectrum caused by the grating are strongly polarized. These effects are analysed and are attributed to the scattering of waveguided light out of the film. It is found that films spun onto metal gratings exhibit especially strong scattering. The effect of metal gratings with various grating depths is analysed. The possible contribution of band gaps to the photoluminescence spectrum from polymers on strong metal gratings is discussed. LEDs that include grating structures are constructed and analysed. It is found that having grating structures on the metal layers that are used as electrodes in the LED does not adversely affect the electrical properties of the LED. It is demonstrated that grating in the LED is able to substantially increase the light emission without using extra electrical power. The emission spectra from LEDs are observed to vary with angle, and exhibit considerable polarization. (author)

Regional snow-avalanche detection using object-based image analysis of near-infrared aerial imagery

Directory of Open Access Journals (Sweden)

K. Korzeniowska

2017-10-01

Full Text Available Snow avalanches are destructive mass movements in mountain regions that continue to claim lives and cause infrastructural damage and traffic detours. Given that avalanches often occur in remote and poorly accessible steep terrain, their detection and mapping is extensive and time consuming. Nonetheless, systematic avalanche detection over large areas could help to generate more complete and up-to-date inventories (cadastres necessary for validating avalanche forecasting and hazard mapping. In this study, we focused on automatically detecting avalanches and classifying them into release zones, tracks, and run-out zones based on 0.25 m near-infrared (NIR ADS80-SH92 aerial imagery using an object-based image analysis (OBIA approach. Our algorithm takes into account the brightness, the normalised difference vegetation index (NDVI, the normalised difference water index (NDWI, and its standard deviation (SDNDWI to distinguish avalanches from other land-surface elements. Using normalised parameters allows applying this method across large areas. We trained the method by analysing the properties of snow avalanches at three 4 km−2 areas near Davos, Switzerland. We compared the results with manually mapped avalanche polygons and obtained a user's accuracy of > 0.9 and a Cohen's kappa of 0.79–0.85. Testing the method for a larger area of 226.3 km−2, we estimated producer's and user's accuracies of 0.61 and 0.78, respectively, with a Cohen's kappa of 0.67. Detected avalanches that overlapped with reference data by > 80 % occurred randomly throughout the testing area, showing that our method avoids overfitting. Our method has potential for large-scale avalanche mapping, although further investigations into other regions are desirable to verify the robustness of our selected thresholds and the transferability of the method.

Emplacement of rock avalanche material across saturated sediments, Southern Alp, New Zealand

Science.gov (United States)

Dufresne, A.; Davies, T. R.; McSaveney, M. J.

2012-04-01

The spreading of material from slope failure events is not only influenced by the volume and nature of the source material and the local topography, but also by the materials encountered in the runout path. In this study, evidence of complex interactions between rock avalanche and sedimentary runout path material were investigated at the 45 x 106 m3 long-runout (L: 4.8 km) Round Top rock avalanche deposit, New Zealand. It was sourced within myolinitic schists of the active strike-slip Alpine Fault. The narrow and in-failure-direction elongate source scarp is deep-seated, indicating slope failure was triggered by strong seismic activity. The most striking morphological deposit features are longitudinal ridges aligned radially to source. Trenching and geophysical surveys show bulldozed and sheared substrate material at ridge termini and laterally displaced sedimentary strata. The substrate failed at a minimum depth of 3 m indicating a ploughing motion of the ridges into the saturated material below. Internal avalanche compression features suggest deceleration behind the bulldozed substrate obstacle. Contorted fabric in material ahead of the ridge document substrate disruption by the overriding avalanche material deposited as the next down-motion hummock. Comparison with rock avalanches of similar volume but different emplacement environments places Round Top between longer runout avalanches emplaced over e.g. playa lake sediments and those with shorter travel distances, whose runout was apparently retarded by topographic obstacles or that entrained high-friction debris. These empirical observations indicate the importance of runout path materials on tentative trends in rock avalanche emplacement dynamics and runout behaviour.

Realization of all-optical switch and diode via Raman gain process using a Kerr field

Science.gov (United States)

Abbas, Muqaddar; Qamar, Sajid; Qamar, Shahid

2016-08-01

The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν =0 , however, it behaves as a moving photonic crystal for Δ ν \

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Quantum key distribution with an entangled light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Dzurnak, B.; Stevenson, R. M.; Nilsson, J.; Dynes, J. F.; Yuan, Z. L.; Skiba-Szymanska, J.; Shields, A. J. [Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2015-12-28

Measurements performed on entangled photon pairs shared between two parties can allow unique quantum cryptographic keys to be formed, creating secure links between users. An advantage of using such entangled photon links is that they can be adapted to propagate entanglement to end users of quantum networks with only untrusted nodes. However, demonstrations of quantum key distribution with entangled photons have so far relied on sources optically excited with lasers. Here, we realize a quantum cryptography system based on an electrically driven entangled-light-emitting diode. Measurement bases are passively chosen and we show formation of an error-free quantum key. Our measurements also simultaneously reveal Bell's parameter for the detected light, which exceeds the threshold for quantum entanglement.

A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit

Science.gov (United States)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin

2017-07-01

We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.

Multipixel geiger-mode photon detectors for ultra-weak light sources

International Nuclear Information System (INIS)

Campisi, A.; Cosentino, L.; Finocchiaro, P.; Pappalardo, A.; Musumeci, F.; Privitera, S.; Scordino, A.; Tudisco, S.; Fallica, G.; Sanfilippo, D.; Mazzillo, M.; Condorelli, G.; Piazza, A.; Valvo, G.; Lombardo, S.; Sciacca, E.; Bonanno, G.; Belluso, M.

2007-01-01

Arrays of Single Photon Avalanche Detectors (SPAD) are considered today as a possible alternative to PMTs and other semiconductor devices in several applications, like physics research, bioluminescence, Positron Emission Tomography (PET) systems, etc. We have developed and characterized a first prototype array produced by STMicroelectronics in silicon planar technology and working at low voltage (30-40 V) in Geiger mode operation. The single cell structure (size down to 20 μm) and the geometrical arrangement give rise to appealing intrinsic characteristics of the device, such as photon detection efficiency, dark count map, cross-talk effects, timing and energy resolution. New prototypes are under construction with a higher number of pixels that have a common output signal to obtain a so-called SiPM (Silicon PhotoMultiplier) configuration

Nanomechanics of slip avalanches in amorphous plasticity

Science.gov (United States)

Cao, Penghui; Dahmen, Karin A.; Kushima, Akihiro; Wright, Wendelin J.; Park, Harold S.; Short, Michael P.; Yip, Sidney

2018-05-01

Discrete stress relaxations (slip avalanches) in a model metallic glass under uniaxial compression are studied using a metadynamics algorithm for molecular simulation at experimental strain rates. The onset of yielding is observed at the first major stress drop, accompanied, upon analysis, by the formation of a single localized shear band region spanning the entire system. During the elastic response prior to yielding, low concentrations of shear transformation deformation events appear intermittently and spatially uncorrelated. During serrated flow following yielding, small stress drops occur interspersed between large drops. The simulation results point to a threshold value of stress dissipation as a characteristic feature separating major and minor avalanches consistent with mean-field modeling analysis and mechanical testing experiments. We further interpret this behavior to be a consequence of a nonlinear interplay of two prevailing mechanisms of amorphous plasticity, thermally activated atomic diffusion and stress-induced shear transformations, originally proposed by Spaepen and Argon, respectively. Probing the atomistic processes at widely separate strain rates gives insight to different modes of shear band formation: percolation of shear transformations versus crack-like propagation. Additionally a focus on crossover avalanche size has implications for nanomechanical modeling of spatially and temporally heterogeneous dynamics.

The December 2008 Crammont rock avalanche, Mont Blanc massif area, Italy

Directory of Open Access Journals (Sweden)

P. Deline

2011-12-01

Full Text Available We describe a 0.5 Mm³ rock avalanche that occurred in 2008 in the western Alps and discuss possible roles of controlling factors in the context of current climate change. The source is located between 2410 m and 2653 m a.s.l. on Mont Crammont and is controlled by a densely fractured rock structure. The main part of the collapsed rock mass deposited at the foot of the rock wall. A smaller part travelled much farther, reaching horizontal and vertical travel distances of 3050 m and 1560 m, respectively. The mobility of the rock mass was enhanced by channelization and snow. The rock-avalanche volume was calculated by comparison of pre- and post-event DTMs, and geomechanical characterization of the detachment zone was extracted from LiDAR point cloud processing. Back analysis of the rock-avalanche runout suggests a two stage event.

There was no previous rock avalanche activity from the Mont Crammont ridge during the Holocene. The 2008 rock avalanche may have resulted from permafrost degradation in the steep rock wall, as suggested by seepage water in the scar after the collapse in spite of negative air temperatures, and modelling of rock temperatures that indicate warm permafrost (T > −2 °C.

Performance study of Philips digital silicon photomultiplier coupled to scintillating crystals

CERN Document Server

Liu, Z.; Auffray, E.; Lecoq, P.; Paganoni, M.

2016-01-01

Silicon photomultipliers (SiPMs) and scintillators are often arranged in the shape of arrays in Positron Emission Tomography (PET) systems. Digital SiPMs provide signal readout in single photon avalanche diode (SPAD) level. From the photon count rate measurement of each SPAD cell of digital SiPM, we found that the output scintillating photons distribute in an area larger than the scintillator physical coupling area. Taking advantage of the possibility to enable/disable individual cells of the digital SiPM, a group of Lutetium-yttrium oxyorthosilicate (LYSO) crystals with different dimensions coupled to a digital SiPM was used to study the influence of using different SiPM active area on the number of photons detected, energy resolution and coincidence time resolution (CTR). For the same crystal coupled to the digital SiPM, the larger the active area of digital SiPM, the higher the number of photons detected. The larger active area of the digital SiPM also results in a better energy resolution after saturation...

Regenerative memory in time-delayed neuromorphic photonic resonators

Science.gov (United States)

Romeira, B.; Avó, R.; Figueiredo, José M. L.; Barland, S.; Javaloyes, J.

2016-01-01

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Avalanches in functional materials and geophysics

CERN Document Server

Saxena, Avadh; Planes, Antoni

2017-01-01

This book provides the state-of-the art of the present understanding of avalanche phenomena in both functional materials and geophysics. The main emphasis of the book is analyzing these apparently different problems within the common perspective of out-of-equilibrium phenomena displaying spatial and temporal complexity that occur in a broad range of scales. Many systems, when subjected to an external force, respond intermittently in the form of avalanches that often span over a wide range of sizes, energies and durations. This is often related to a class of critical behavior characterized by the absence of characteristic scales. Typical examples are magnetization processes, plastic deformation and failure occuring in functional materials. These phenomena share many similarities with seismicity arising from the earth crust failure due to stresses that originate from plate tectonics.

Rockslide-debris avalanche of May 18, 1980, Mount St. Helens Volcano, Washington

Science.gov (United States)

Glicken, Harry

1996-01-01

This report provides a detailed picture of the rockslide-debris avalanche of the May 18, 1980, eruption of Mount St. Helens volcano. It provides a characterization of the deposit, a reinterpretation of the details of the first minutes of the eruption of May 18, and insight into the transport mechanism of the mass movement. Details of the rockslide event, as revealed by eyewitness photographs, are correlated with features of the deposit. The photographs show three slide blocks in the rockslide movement. Slide block I was triggered by a magnitude 5.1 earthquake at 8:32 a.m. Pacific Daylight Time (P.D.T.). An exploding cryptodome burst through slide block II to produce the 'blast surge.' Slide block III consisted of many discrete failures that were carried out in continuing pyroclastic currents generated from the exploding cryptodome. The cryptodome continued to depressurize after slide block III, producing a blast deposit that rests on top of the debris-avalanche deposit. The hummocky 2.5 cubic kilometer debris-avalanche deposit consists of block facies (pieces of the pre-eruption Mount St. Helens transported relatively intact) and matrix facies (a mixture of rocks from the old mountain and cryptodome dacite). Block facies is divided into five lithologic units. Matrix facies was derived from the explosively generated current of slide block III as well as from disaggregation and mixing of debris-avalanche blocks. The mean density of the old cone was measured to be abut 20 percent greater than the mean density of the avalanche deposit. Density in the deposit does not decrease with distance which suggests that debris-avalanche blocks were dilated at the mountain, rather than during transport. Various grain-size parameters that show that clast size converges about a mean with distance suggest mixing during transport. The debris-avalanche flow can be considered a grain flow, where particles -- either debris-avalanche blocks or the clasts within the blocks -- collided and

Optimization of eyesafe avalanche photodiode lidar for automobile safety and autonomous navigation systems

Science.gov (United States)

Williams, George M.

2017-03-01

Newly emerging accident-reducing, driver-assistance, and autonomous-navigation technology for automobiles is based on real-time three-dimensional mapping and object detection, tracking, and classification using lidar sensors. Yet, the lack of lidar sensors suitable for meeting application requirements appreciably limits practical widespread use of lidar in trucking, public livery, consumer cars, and fleet automobiles. To address this need, a system-engineering perspective to eyesafe lidar-system design for high-level advanced driver-assistance sensor systems and a design trade study including 1.5-μm spot-scanned, line-scanned, and flash-lidar systems are presented. A cost-effective lidar instrument design is then proposed based on high-repetition-rate diode-pumped solid-state lasers and high-gain, low-excess-noise InGaAs avalanche photodiode receivers and focal plane arrays. Using probabilistic receiver-operating-characteristic analysis, derived from measured component performance, a compact lidar system is proposed that is capable of 220 m ranging with 5-cm accuracy, which can be readily scaled to a 360-deg field of regard.

Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

International Nuclear Information System (INIS)

Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

2010-01-01

Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

Pin Diode Detector For Radiation Field Monitoring In A Current Mode

International Nuclear Information System (INIS)

Beck, A.; Wengrowicz, U.; Kadmon, Y.; Tirosh, D.; Osovizky, A.; Vulasky, E.; Tal, N.

1999-01-01

Thus paper presents calculations and tests made for a detector based on a bare Pin diode and a Pin diode coupled to a plastic scintillator. These configurations have a variety of applications in radiation field monitoring. For example, the Positron Emission Tomography (PET) technology which becomes an established diagnostic imaging modality. Flour-18 is one of the major isotopes being used by PET imaging. The PET method utilizes short half life β + radioisotopes which, by annihilation, produce a pair of high energy photons (511 keV). Fluoro-deoxyglucose producers are required to meet federal regulations and licensing requirements. Some of the regulations are related to the production in chemistry modules regarding measuring the Start Of Synthesis (SOS) activity and verifying the process repeatability. Locating a radiation detector based on Pin diode inside the chemistry modules is suitable for this purpose. The dimensions of a Pin diode based detector can be small, with expected linearity over several scale decades

Characteristics of silicon diodes as patient dosemeters in external radiation therapy

International Nuclear Information System (INIS)

Nilsson, B.; Sorcini, B.

1988-01-01

Silicon diodes connected to an integrating instrument that are used to measure the entrance dose on patients undergoing radiation therapy have been investigated with special emphasis on practical clinical aspects. The variation of the diode response for different photon qualities with different field sizes and different irradiation situations including oblique fields, wedges, blocking filters giving different electron contamination have been measured. The diode response for the different situations met in clinical practice when using various electron energies have also been examined. The results from measurements for patients treated with high energy are presented. The study has shown that if the mean value of all measured entrance doses with the diode on a patient differ more than ±3% from the presented absorbed dose for 60 Co gamma radiation, a correction of the given dose should be made. The corresponding figure for high energy X-rays is ±5%. 23 refs.; 6 figs.; 5 tabs

Modal gain and confinement factors in top- and bottom-emitting photonic-crystal VCSEL

International Nuclear Information System (INIS)

Czyszanowski, T; Thienpont, H; Panajotov, K; Dems, M

2008-01-01

We investigate the modal characteristics of a phosphide photonic-crystal vertical-cavity surface-emitting diode laser (VCSEL) by using the three-dimensional, full vectorial plane wave admittance method. A single-defect, photonic crystal is defined as a regular, hexagonal net of holes with varying depths. The modal gain and confinement factors are compared for two VCSEL structures: with emission either through the DBR with the photonic crystal or through the DBR free of photonic crystal. Significant improvement in the beam quality is demonstrated for the second design

Photon Reabsorption in Mixed CsPbCl3:CsPbI3 Perovskite Nanocrystal Films for Light-Emitting Diodes

KAUST Repository

Davis, Nathaniel J. L. K.

2017-01-24

Cesium lead halide nanocrystals, CsPbX3 (X = Cl, Br, I), exhibit photoluminescence quantum efficiencies approaching 100% without the core–shell structures usually used in conventional semiconductor nanocrystals. These high photoluminescence efficiencies make these crystals ideal candidates for light-emitting diodes (LEDs). However, because of the large surface area to volume ratio, halogen exchange between perovskite nanocrystals of different compositions occurs rapidly, which is one of the limiting factors for white-light applications requiring a mixture of different crystal compositions to achieve a broad emission spectrum. Here, we use mixtures of chloride and iodide CsPbX3 (X = Cl, I) perovskite nanocrystals where anion exchange is significantly reduced. We investigate samples containing mixtures of perovskite nanocrystals with different compositions and study the resulting optical and electrical interactions. We report excitation transfer from CsPbCl3 to CsPbI3 in solution and within a poly(methyl methacrylate) matrix via photon reabsorption, which also occurs in electrically excited crystals in bulk heterojunction LEDs.

Statistical analysis and trends of wet snow avalanches in the French Alps over the period 1959-2010

Science.gov (United States)

Naaim, Mohamed

2017-04-01

Since an avalanche contains a significant proportion of wet snow, its characteristics and its behavior change significantly (heterogeneous and polydisperse). Even if on a steep given slope, wet snow avalanches are slow. They can flow over gentle slopes and reach the same extensions as dry avalanches. To highlight the link between climate warming and the proliferation of wet snow avlanches, we crossed two well-documented avalanche databases: the permanent avalanche chronicle (EPA) and the meteorological re-analyzes. For each avalanche referenced in EPA, a moisture index I is buit. It represents the ratio of the thickness of the wet snow layer to the total snow thickness, at the date of the avalanche on the concerned massif at 2400 m.a.s.l. The daily and annual proportion of avalanches exceeding a given threshold of I are calculated for each massif of the French alps. The statistical distribution of wet avalanches per massif is calculated over the period 1959-2009. The statistical quantities are also calculated over two successive periods of the same duration 1959-1984 and 1984-2009, and the annual evolution of the proportion of wet avalanches is studied using time-series tools to detect potential rupture or trends. This study showed that about 77% of avalanches on the French alpine massif mobilize dry snow. The probability of having an avalanche of a moisture index greater than 10 % in a given year is 0.2. This value varies from one massif to another. The analysis between the two successive periods showed a significant growth of wet avalanches on 20 massifs and a decrease on 3 massifs. The study of time-series confirmed these trends, which are of the inter-annual variability level.

Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2012-01-01

. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

Diode readout electronics for beam intensity and position monitors for FELs

International Nuclear Information System (INIS)

Herrmann, S; Hart, P; Freytag, M; Pines, J; Weaver, M; Sapozhnikov, L; Nelson, S; Koglin, J; Carini, G A; Tomada, A; Haller, G

2014-01-01

LCLS uses Intensity-Position Monitors (IPM) to measure intensity and position of the FEL x-ray pulses. The primary beam passes through a silicon nitride film and four diodes, arranged in quadrants, detect the backscattered x-ray photons. The position is derived from the relative intensity of the four diodes, while the sum provides beam intensity information. In contrast to traditional synchrotron beam monitors, where diodes measure a DC current signal, the LCLS beam monitors have to cope with the pulsed nature of the FEL, which requires a large single shot dynamic range. A key component of these beam monitors is the readout electronics. The first generation of beam monitors showed some limitations. A new scheme with upgraded electronics, firmware and software was implemented resulting in a more robust and reliable measuring tool.

Application of avalanche photodiodes for the measurement of actinides by alpha liquid scintillation counting

International Nuclear Information System (INIS)

Reboli, A.

2005-10-01

Alpha emitters analysis using liquid scintillation spectroscopy is often used when sensitivity and fast samples preparation are the important points. A more extensive use of this technique is until now limited by its poor resolution compared to alpha particle spectroscopy with semiconductor detectors. To improve the resolution and thus promote this method for the measurement of actinides in environment, we have tested silicon avalanche photodiodes (APD) as new detectors for scintillation photons. The set-up consists of a large area avalanche photodiode (16 mm diameter) coupled to a thin vial containing alpha-emitters within a liquid scintillation cocktail. After optimization of several parameters like bias voltage, temperature, counting geometry and composition of the scintillating cocktail, energy resolutions have been found to be better than those obtained with standard photomultiplier tubes (PMT): 5% (200 keV FWHM) for 232 Th and 4.2% (240 keV FWHM) for 236 Pu. Our results show that the improvement is due to less fluctuations associated with light collection since the spatial response of APDs is more uniform than that of PMTs. The expected gain on quantum efficiency (80% for APDs instead of 25% for PMTs) is nullified by a corresponding increase on electronic noise and excess noise factor. Significant better results are foreseen by using green scintillators (450 - 550 nm wavelengths region) with larger Stokes-shift and blue-enhanced APDs which reach their maximum quantum efficiency in this region. (author)

Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

Directory of Open Access Journals (Sweden)

Kui Wu

2013-09-01

Full Text Available The InGaN multiple quantum well light-emitting diodes (LEDs with different sizes of indium-tin-oxide (ITO nanobowl photonic crystal (PhC structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP of PhC LEDs (at 350 mA has been enhanced by 63.5% and the emission divergence exhibits a 28.8° reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.

Information processing occurs via critical avalanches in a model of the primary visual cortex

International Nuclear Information System (INIS)

Bortolotto, G. S.; Girardi-Schappo, M.; Gonsalves, J. J.; Tragtenberg, M. H. R.; Pinto, L. T.

2016-01-01

We study a new biologically motivated model for the Macaque monkey primary visual cortex which presents power-law avalanches after a visual stimulus. The signal propagates through all the layers of the model via avalanches that depend on network structure and synaptic parameter. We identify four different avalanche profiles as a function of the excitatory postsynaptic potential. The avalanches follow a size-duration scaling relation and present critical exponents that match experiments. The structure of the network gives rise to a regime of two characteristic spatial scales, one of which vanishes in the thermodynamic limit. (paper)

Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

International Nuclear Information System (INIS)

Kyuregyan, A. S.

2015-01-01

A simple analytical theory of the picosecond switching of high-voltage overloaded p + –i–n + photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs

Avalanches in the Bean critical-state model

International Nuclear Information System (INIS)

Barford, W.

1997-01-01

A macroscopic equation of motion for the flux density in dirty type-II superconductors is introduced. The flux density is subject to various types of spatially varying pinning force. When there is no stick-slip dynamics, i.e., when the static pinning force equals the dynamic pinning force, it is shown that in both one and two dimensions an increase in the surface magnetic field leads to an overall height change and hence to a change in magnetization equal to the change in the surface magnetic field. More interesting behavior occurs on introducing stick-slip dynamics, i.e., when the static pinning force exceeds the dynamic pinning force. In this limit a distribution of avalanche sizes over four orders of magnitude is found for a 100x100 lattice. Apart from the anomalous behavior at large sizes, this is shown to fit a distribution of the form P(s)∼s -ν exp(-s/α), where s is the avalanche size. The anomalous behavior for large sizes corresponds to avalanches which involve most of the lattice and, hence, cause the flux to open-quotes slide over the edge,close quotes as detected by a change in the edge magnetization. copyright 1997 The American Physical Society

Quantum optics with nanowires (Conference Presentation)

Science.gov (United States)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Patient dosimetry quality assurance program with a commerical diode system

International Nuclear Information System (INIS)

Lee, P.C.; Sawicka, J.M.; Glasgow, G.P.

1994-01-01

The purpose was to evaluate a commercial silicone diode dosimeter for a patient dosimetry quality assurance program. The diode dosimeter was calibrated against an ion chamber, and percentage depth dose, linearity, anisotrophy, virtual source position, and field size factor studies were performed. Correction factors for lack of full scatter medium in the diode entrance and exit dose measurements were acquired. Dosimetry equations were proposed for calculation of dose delivered at isocenter. Diode dose accuracy and reproducibility were tested on phantom and on four patients. A patient dosimetry quality assurance program based on diode-measured dose was instituted and patient dose data were collected. Diode measured percentage depth dose and field factors agreed to within 3% with those measured with an ion chamber. The diode exhibited less than 1.7% angular dose anisotrophy and less than 0.5% nonlinearity up to 4 Gy. Diode dose measurements in phantom showed that the calculated doses differed from the prescribed dose by less than 1.%; the diode exhibited a daily dose reproducibility of better than 0.2%. On four selected patients, the measured dose reproducibility was 1.5%; the average calculated doses were all within ± 7% of the prescribed doses. For 33 of 40 patients treated with a 6 MW beam, measured doses were within ± 7% of the prescribed doses. For 11 out of 12 patients, a second repeat measurements yielded doses within ± 7% of the prescribed doses. The proposed diode-based patient dosimetry quality assurance program with dose tolerance at ± 7% is simple and feasible. It is capable of detecting certain serious treatment errors such as incorrect daily dose greater than 7%, incorrect wedge use, incorrect photon energy and patient setup errors involving some incorrect source-to-surface-distance vs. source-to-axis-distance treatments. 13 refs., 5 figs., 5 tabs

Snow-avalanche impact craters in southern Norway: Their morphology and dynamics compared with small terrestrial meteorite craters

Science.gov (United States)

Matthews, John A.; Owen, Geraint; McEwen, Lindsey J.; Shakesby, Richard A.; Hill, Jennifer L.; Vater, Amber E.; Ratcliffe, Anna C.

2017-11-01

This regional inventory and study of a globally uncommon landform type reveals similarities in form and process between craters produced by snow-avalanche and meteorite impacts. Fifty-two snow-avalanche impact craters (mean diameter 85 m, range 10-185 m) were investigated through field research, aerial photographic interpretation and analysis of topographic maps. The craters are sited on valley bottoms or lake margins at the foot of steep avalanche paths (α = 28-59°), generally with an easterly aspect, where the slope of the final 200 m of the avalanche path (β) typically exceeds 15°. Crater diameter correlates with the area of the avalanche start zone, which points to snow-avalanche volume as the main control on crater size. Proximal erosional scars ('blast zones') up to 40 m high indicate up-range ejection of material from the crater, assisted by air-launch of the avalanches and impulse waves generated by their impact into water-filled craters. Formation of distal mounds up to 12 m high of variable shape is favoured by more dispersed down-range deposition of ejecta. Key to the development of snow-avalanche impact craters is the repeated occurrence of topographically-focused snow avalanches that impact with a steep angle on unconsolidated sediment. Secondary craters or pits, a few metres in diameter, are attributed to the impact of individual boulders or smaller bodies of snow ejected from the main avalanche. The process of crater formation by low-density, low-velocity, large-volume snow flows occurring as multiple events is broadly comparable with cratering by single-event, high-density, high-velocity, small-volume projectiles such as small meteorites. Simple comparative modelling of snow-avalanche events associated with a crater of average size (diameter 85 m) indicates that the kinetic energy of a single snow-avalanche impact event is two orders of magnitude less than that of a single meteorite-impact event capable of producing a crater of similar size

Validating numerical simulations of snow avalanches using dendrochronology: the Cerro Ventana event in Northern Patagonia, Argentina

Directory of Open Access Journals (Sweden)

A. Casteller

2008-05-01

Full Text Available The damage caused by snow avalanches to property and human lives is underestimated in many regions around the world, especially where this natural hazard remains poorly documented. One such region is the Argentinean Andes, where numerous settlements are threatened almost every winter by large snow avalanches. On 1 September 2002, the largest tragedy in the history of Argentinean mountaineering took place at Cerro Ventana, Northern Patagonia: nine persons were killed and seven others injured by a snow avalanche. In this paper, we combine both numerical modeling and dendrochronological investigations to reconstruct this event. Using information released by local governmental authorities and compiled in the field, the avalanche event was numerically simulated using the avalanche dynamics programs AVAL-1D and RAMMS. Avalanche characteristics, such as extent and date were determined using dendrochronological techniques. Model simulation results were compared with documentary and tree-ring evidences for the 2002 event. Our results show a good agreement between the simulated projection of the avalanche and its reconstructed extent using tree-ring records. Differences between the observed and the simulated avalanche, principally related to the snow height deposition in the run-out zone, are mostly attributed to the low resolution of the digital elevation model used to represent the valley topography. The main contributions of this study are (1 to provide the first calibration of numerical avalanche models for the Patagonian Andes and (2 to highlight the potential of Nothofagus pumilio tree-ring records to reconstruct past snow-avalanche events in time and space. Future research should focus on testing this combined approach in other forested regions of the Andes.

HIGH-SPEED IMAGING AND WAVEFRONT SENSING WITH AN INFRARED AVALANCHE PHOTODIODE ARRAY

Energy Technology Data Exchange (ETDEWEB)

Baranec, Christoph; Atkinson, Dani; Hall, Donald; Jacobson, Shane; Chun, Mark [Institute for Astronomy, University of Hawai‘i at Mānoa, Hilo, HI 96720-2700 (United States); Riddle, Reed [Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Law, Nicholas M., E-mail: baranec@hawaii.edu [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255 (United States)

2015-08-10

Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e{sup −} in the lab, and a total noise of 2.52 e{sup −} on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

Science.gov (United States)

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-15

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

Nano-LED array fabrication suitable for future single photon lithography

International Nuclear Information System (INIS)

Mikulics, M; Hardtdegen, H

2015-01-01

We report on an alternative illumination concept for a future lithography based on single-photon emitters and important technological steps towards its implementation. Nano light-emitting diodes (LEDs) are chosen as the photon emitters. First, the development of their fabrication and their integration technology is presented, then their optical characteristics assessed. Last, size-controlled nano-LEDs, well positioned in an array, are electrically driven and utilized for illumination. Nanostructures are lithographically formed, demonstrating the feasibility of the approach. The potential of single-photon lithography to reach the ultimate scale limits in mass production is discussed. (paper)

Massive Formation of Equiaxed Crystals by Avalanches of Mushy Zone Segments

Science.gov (United States)

Ludwig, A.; Stefan-Kharicha, M.; Kharicha, A.; Wu, M.

2017-06-01

It is well known that the growth and motion of equiaxed crystals govern important microstructural features, especially in larger castings such as heavy ingots. To determine the origin of the equiaxed crystals, heterogeneous nucleation, and/or fragmentation of dendrite arms from columnar regions are often discussed. In the present study, we demonstrate that under certain conditions relatively large areas of mushy regions slide downward and form spectacular crystal avalanches. These avalanches crumble into thousands of dendritic fragments, whereby the larger fragments immediately sediment and the smaller proceed to behave as equiaxed crystals. Traces of such crystal avalanches can be seen by conspicuous equiaxed layers in the lower part of the casting. From the arguments in the discussion, it is believed that such a phenomenon may occur in alloys which reveal an upward solutal buoyancy in the interdendritic mush. This would include certain steels and other alloys such as Cu-Al, Pb-Sn, or Ni-Al-alloys. Moreover, the occurrence of crystal avalanches contribute to the formation of V-segregations.

A concept for optimizing avalanche rescue strategies using a Monte Carlo simulation approach.

Directory of Open Access Journals (Sweden)

Ingrid Reiweger

Full Text Available Recent technical and strategical developments have increased the survival chances for avalanche victims. Still hundreds of people, primarily recreationists, get caught and buried by snow avalanches every year. About 100 die each year in the European Alps-and many more worldwide. Refining concepts for avalanche rescue means to optimize the procedures such that the survival chances are maximized in order to save the greatest possible number of lives. Avalanche rescue includes several parameters related to terrain, natural hazards, the people affected by the event, the rescuers, and the applied search and rescue equipment. The numerous parameters and their complex interaction make it unrealistic for a rescuer to take, in the urgency of the situation, the best possible decisions without clearly structured, easily applicable decision support systems. In order to analyse which measures lead to the best possible survival outcome in the complex environment of an avalanche accident, we present a numerical approach, namely a Monte Carlo simulation. We demonstrate the application of Monte Carlo simulations for two typical, yet tricky questions in avalanche rescue: (1 calculating how deep one should probe in the first passage of a probe line depending on search area, and (2 determining for how long resuscitation should be performed on a specific patient while others are still buried. In both cases, we demonstrate that optimized strategies can be calculated with the Monte Carlo method, provided that the necessary input data are available. Our Monte Carlo simulations also suggest that with a strict focus on the "greatest good for the greatest number", today's rescue strategies can be further optimized in the best interest of patients involved in an avalanche accident.

Modeling the influence of snow cover temperature and water content on wet-snow avalanche runout

Directory of Open Access Journals (Sweden)

C. Vera Valero

2018-03-01

Full Text Available Snow avalanche motion is strongly dependent on the temperature and water content of the snow cover. In this paper we use a snow cover model, driven by measured meteorological data, to set the initial and boundary conditions for wet-snow avalanche calculations. The snow cover model provides estimates of snow height, density, temperature and liquid water content. This information is used to prescribe fracture heights and erosion heights for an avalanche dynamics model. We compare simulated runout distances with observed avalanche deposition fields using a contingency table analysis. Our analysis of the simulations reveals a large variability in predicted runout for tracks with flat terraces and gradual slope transitions to the runout zone. Reliable estimates of avalanche mass (height and density in the release and erosion zones are identified to be more important than an exact specification of temperature and water content. For wet-snow avalanches, this implies that the layers where meltwater accumulates in the release zone must be identified accurately as this defines the height of the fracture slab and therefore the release mass. Advanced thermomechanical models appear to be better suited to simulate wet-snow avalanche inundation areas than existing guideline procedures if and only if accurate snow cover information is available.

Detection efficiency characteristics of free-running InGaAs/InP single photon detector using passive quenching active reset IC

International Nuclear Information System (INIS)

Zheng Fu; Wang Chao; Sun Zhi-Bin; Zhai Guang-Jie

2016-01-01

InGaAs/InP avalanche photodiodes (APD) are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector’s afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector’s performance is consistent with gated operation. (paper)

Hybrid phase transition into an absorbing state: Percolation and avalanches

Science.gov (United States)

Lee, Deokjae; Choi, S.; Stippinger, M.; Kertész, J.; Kahng, B.

2016-04-01

Interdependent networks are more fragile under random attacks than simplex networks, because interlayer dependencies lead to cascading failures and finally to a sudden collapse. This is a hybrid phase transition (HPT), meaning that at the transition point the order parameter has a jump but there are also critical phenomena related to it. Here we study these phenomena on the Erdős-Rényi and the two-dimensional interdependent networks and show that the hybrid percolation transition exhibits two kinds of critical behaviors: divergence of the fluctuations of the order parameter and power-law size distribution of finite avalanches at a transition point. At the transition point global or "infinite" avalanches occur, while the finite ones have a power law size distribution; thus the avalanche statistics also has the nature of a HPT. The exponent βm of the order parameter is 1 /2 under general conditions, while the value of the exponent γm characterizing the fluctuations of the order parameter depends on the system. The critical behavior of the finite avalanches can be described by another set of exponents, βa and γa. These two critical behaviors are coupled by a scaling law: 1 -βm=γa .

High-Gain Avalanche Rushing amorphous Photoconductor (HARP) detector

Energy Technology Data Exchange (ETDEWEB)

Tanioka, K. [NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan)], E-mail: tanioka.k-jg@nhk.or.jp

2009-09-01

We have been studying a very sensitive image sensor since the early 1980s. In 1985, the author found for the first time that an experimental pickup tube with an amorphous selenium photoconductive target exhibits high sensitivity with excellent picture quality because of a continuous and stable avalanche multiplication phenomenon. We named the pickup tube with an amorphous photoconductive layer operating in the avalanche-mode 'HARP': High-gain Avalanche Rushing amorphous Photoconductor. A color camera equipped with the HARP pickup tubes has a maximum sensitivity of 11 lx at F8. This means that the HARP camera is about 100 times as sensitive as that of CCD camera for broadcasting. This ultrahigh-sensitivity HARP pickup tube is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications, including medical diagnoses, biotech research, and nighttime surveillance. In addition, since the HARP target can convert X-rays into electrons directly, it should be possible to exploit this capability to produce X-ray imaging devices with unparalleled levels of resolution and sensitivity.

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Feasibility study into the use of silicon photo-diodes for the alignment of collimated X-rays on the SRS

CERN Document Server

Buffey, S G

1999-01-01

Dynamic alignment of beam on the crystal during data collection was studied. Development of silicon photo-diode detectors for the vacuum ultraviolet and soft X-ray spectral regions has led to the use of such devices as beam alignment tools for Protein Crystallography beamlines on the Synchrotron Radiation Source at Daresbury. Quadrant photo-diodes are used to provide signals proportional to the number of photons hitting each photo-diode, these are amplified, digitised and then summed to give the x-y position of the beam centre. (author)

New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region

Science.gov (United States)

Capasso, F.; Tsang, W. T.; Williams, G. F.

1982-12-01

Recent experimental and theoretical results on a new class of low noise avalanche photo-diodes are reviewed. A large enhancement of the impact ionization rates ratio (a/(3=10) has been demonstrated in AlGaAs/GaAs superlattices and graded band gap detector structures. In addition two novel photodiodes ("staircase" and "channeling" APDs) where only electrons multiply, have been proposed. The staircase APD is the solid state analog of the photo-multiplier with discrete dynodes. It has a low operating voltage (5-20 volts) and a lower excess noise factor, in the ideal case, than that of an ideal conventional APD The channeling APD is instead the solid state analog of a channeltron photomultiplier and has the unique feature of an ultrahigh a/β, ratio (≍∞) compatible with high gain (>100).

Monolithically Integrated Ge-on-Si Active Photonics

Directory of Open Access Journals (Sweden)

Jifeng Liu

2014-07-01

Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

Direct Generation and Detection of Quantum Correlated Photons with 3.2 um Wavelength Spacing.

Science.gov (United States)

Sua, Yong Meng; Fan, Heng; Shahverdi, Amin; Chen, Jia-Yang; Huang, Yu-Ping

2017-12-13

Quantum correlated, highly non-degenerate photons can be used to synthesize disparate quantum nodes and link quantum processing over incompatible wavelengths, thereby constructing heterogeneous quantum systems for otherwise unattainable superior performance. Existing techniques for correlated photons have been concentrated in the visible and near-IR domains, with the photon pairs residing within one micron. Here, we demonstrate direct generation and detection of high-purity photon pairs at room temperature with 3.2 um wavelength spacing, one at 780 nm to match the rubidium D2 line, and the other at 3950 nm that falls in a transparent, low-scattering optical window for free space applications. The pairs are created via spontaneous parametric downconversion in a lithium niobate waveguide with specially designed geometry and periodic poling. The 780 nm photons are measured with a silicon avalanche photodiode, and the 3950 nm photons are measured with an upconversion photon detector using a similar waveguide, which attains 34% internal conversion efficiency. Quantum correlation measurement yields a high coincidence-to-accidental ratio of 54, which indicates the strong correlation with the extremely non-degenerate photon pairs. Our system bridges existing quantum technology to the challenging mid-IR regime, where unprecedented applications are expected in quantum metrology and sensing, quantum communications, medical diagnostics, and so on.

Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions

International Nuclear Information System (INIS)

Lu Jiang; Tian Xiaoli; Lu Shuojin; Zhou Hongyu; Zhu Yangjun; Han Zhengsheng

2013-01-01

The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching (UIS) conditions is measured. This measurement is to investigate and compare the dynamic avalanche failure behavior of the power MOSFETs and the IGBT, which occur at different current conditions. The UIS measurement results at different current conditions show that the main failure reason of the power MOSFETs is related to the parasitic bipolar transistor, which leads to the deterioration of the avalanche reliability of power MOSFETs. However, the results of the IGBT show two different failure behaviors. At high current mode, the failure behavior is similar to the power MOSFETs situation. But at low current mode, the main failure mechanism is related to the parasitic thyristor activity during the occurrence of the avalanche process and which is in good agreement with the experiment result. (semiconductor devices)

New advances for modelling the debris avalanches

Science.gov (United States)

Cuomo, Sabatino; Cascini, Leonardo; Pastor, Manuel; Castorino, Giuseppe Claudio

2013-04-01

Flow-like landslides are a major global hazard and they occur worldwide causing a large number of casualties, significant structural damages to property and infrastructures as well as economic losses. When involving open slopes, these landslides often occur in triangular source areas where initial slides turn into avalanches through further failures and/or eventual soil entrainment. This paper deals with the numerical modelling of the propagation stage of debris avalanches which provides information such as the propagation pattern of the mobilized material, its velocity, thickness and run-out distance. In the paper, a "depth integrated" model is used which allows: i) adequately taking into account the irregular topography of real slopes which greatly affect the propagation stage and ii) using a less time consuming model than fully 3D approaches. The used model is named "GeoFlow_SPH" and it was formerly applied to theoretical, experimental and real case histories (Pastor et al., 2009; Cascini et al., 2012). In this work the behavior of debris avalanches is analyzed with special emphasis on the apical angle, one of the main features of this type of landslide, in relation to soil rheology, hillslope geometry and features of triggering area. Furthermore, the role of erosion has been investigated with reference to the uppermost parts of open slopes with a different steepness. These analyses are firstly carried out for simplified benchmark slopes, using both water-like materials (with no shear strength) and debris type materials. Then, three important case studies of Campania region (Cervinara, Nocera Inferiore e Sarno) are analyzed where debris avalanches involved pyroclastic soils originated from the eruptive products of Vesusius volcano. The results achieved for both benchmark slopes and real case histories outline the key role played by the erosion on the whole propagation stage of debris avalanches. The results are particularly satisfactory since they indicate the

Scaling behavior of individual barkhausen avalanches in nucleation-mediated magnetization reversal processes

Energy Technology Data Exchange (ETDEWEB)

Im, Mi-Young; Fischer, Peter; Kim, Dong-Hyun; Shin, Sung-Chul

2009-11-09

We report the scaling behavior of Barkhausen avalanches along the hysteresis loop of a CoCrPt alloy film with perpendicular magnetic anisotropy for every field step of 200 Oe. Individual Barkhausen avalanches are directly observed via high-resolution soft X-ray microscopy with a spatial resolution of 15 nm. The Barkhausen avalanches exhibit a power-law scaling behavior, where the scaling exponent of the power-law distribution drastically changes from 1 {+-} 0.04 to 1.47 {+-} 0.03 as the applied magnetic field approaches the coercivity of the CoCrPt film. We infer that this is due to the coupling of adjacent domains.

Optimization of single photon detection model based on GM-APD

Science.gov (United States)

Chen, Yu; Yang, Yi; Hao, Peiyu

2017-11-01

One hundred kilometers high precision laser ranging hopes the detector has very strong detection ability for very weak light. At present, Geiger-Mode of Avalanche Photodiode has more use. It has high sensitivity and high photoelectric conversion efficiency. Selecting and designing the detector parameters according to the system index is of great importance to the improvement of photon detection efficiency. Design optimization requires a good model. In this paper, we research the existing Poisson distribution model, and consider the important detector parameters of dark count rate, dead time, quantum efficiency and so on. We improve the optimization of detection model, select the appropriate parameters to achieve optimal photon detection efficiency. The simulation is carried out by using Matlab and compared with the actual test results. The rationality of the model is verified. It has certain reference value in engineering applications.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

Science.gov (United States)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

First Townsend coefficient of organic vapour in avalanche counters

International Nuclear Information System (INIS)

Sernicki, J.

1990-01-01

A new concept is presented in the paper for implementing the proven method of determining the first Townsend coefficient (α) of gases using an avalanche counter. The A and B gas constants, interrelated by the expression α/p=A exp[-B/(K/p)], are analyzed. Parallel-plate avalanche counters (PPAC) with an electrode spacing d from 0.1 to 0.4 cm have been employed for the investigation, arranged to register low-energy alpha particles at n-heptane vapour pressures of p≥5 Torr. An in-depth discussion is given, covering the veracity and the behaviour vs K/p, of the n-heptane A and B constants determined at reduced electric-field intensity values ranging from 173.5 to 940 V/cm Torr; the constants have been found to depend upon d. The results of the investigation are compared to available data of the α coefficient of organic vapours used in avalanche counters. The PPAC method of determining α reveals some imperfections at very low values of the pd product. (orig.)

AN MHD AVALANCHE IN A MULTI-THREADED CORONAL LOOP

Energy Technology Data Exchange (ETDEWEB)

Hood, A. W.; Cargill, P. J.; Tam, K. V. [School of Mathematics and Statistics, University of St Andrews, St Andrews, Fife, KY16 9SS (United Kingdom); Browning, P. K., E-mail: awh@st-andrews.ac.uk [School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom)

2016-01-20

For the first time, we demonstrate how an MHD avalanche might occur in a multithreaded coronal loop. Considering 23 non-potential magnetic threads within a loop, we use 3D MHD simulations to show that only one thread needs to be unstable in order to start an avalanche even when the others are below marginal stability. This has significant implications for coronal heating in that it provides for energy dissipation with a trigger mechanism. The instability of the unstable thread follows the evolution determined in many earlier investigations. However, once one stable thread is disrupted, it coalesces with a neighboring thread and this process disrupts other nearby threads. Coalescence with these disrupted threads then occurs leading to the disruption of yet more threads as the avalanche develops. Magnetic energy is released in discrete bursts as the surrounding stable threads are disrupted. The volume integrated heating, as a function of time, shows short spikes suggesting that the temporal form of the heating is more like that of nanoflares than of constant heating.

Observation of the Avalanche of Runaway Electrons in Air in a Strong Electric Field

Science.gov (United States)

Gurevich, A. V.; Mesyats, G. A.; Zybin, K. P.; Yalandin, M. I.; Reutova, A. G.; Shpak, V. G.; Shunailov, S. A.

2012-08-01

The generation of an avalanche of runaway electrons is demonstrated for the first time in a laboratory experiment. Two flows of runaway electrons are formed sequentially in an extended air discharge gap at the stage of delay of a pulsed breakdown. The first, picosecond, runaway electron flow is emitted in the cathode region where the field is enhanced. Being accelerated in the gap, this beam generates electrons due to impact ionization. These secondary electrons form a delayed avalanche of runaway electrons if the field is strong enough. The properties of the avalanche correspond to the existing notions about the runaway breakdown in air. The measured current of the avalanche exceeds up to an order the current of the initiating electron beam.

Beam related response of in vivo diode detectors for external radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Baci, Syrja, E-mail: sbarci2013@gmail.com [Department of Physics, Faculty of Natural Sciences, University of Gjirokastra, “Eqrem Çabej” (Albania); Telhaj, Ervis [Department of Medical Physics, Hygeia Hospital Tirana (Albania); Malkaj, Partizan [Department of Physical Engineering, Polytechnic University, Tirana (Albania)

2016-03-25

In Vivo Dosimetry (IVD) is a set of methods used in cancer treatment clinics to determine the real dose of radiation absorbed by target volume in a patient’s body. IVD has been widely implemented in radiotherapy treatment centers and is now recommended part of Quality Assurance program by many International health and radiation organizations. Because of cost and lack of specialized personnel, IVD has not been practiced as yet, in Albanian radiotherapy clinics. At Hygeia Hospital Tirana, patients are irradiated with high energy photons generated by Elekta Synergy Accelerators. We have recently started experimenting with the purpose of establishing an IVD practice at this hospital. The first set of experiments was aimed at calibration of diodes that are going to be used for IVD. PMMA, phantoms by PTW were used to calibrate p – type Si, semiconductor diode dosimeters, made by PTW Freiburg for entrance dose. Response of the detectors is affected by energy of the beam, accumulated radiation dose, dose rate, temperature, angle against the beam axis, etc. Here we present the work done for calculating calibration factor and correction factors of source to surface distance, field size, and beam incidence for the entrance dose for both 6 MV photon beam and 18 MV photon beam. Dependence of dosimeter response was found to be more pronounced with source to surface distance as compared to other variables investigated.

Beam related response of in vivo diode detectors for external radiotherapy

International Nuclear Information System (INIS)

Baci, Syrja; Telhaj, Ervis; Malkaj, Partizan

2016-01-01

In Vivo Dosimetry (IVD) is a set of methods used in cancer treatment clinics to determine the real dose of radiation absorbed by target volume in a patient’s body. IVD has been widely implemented in radiotherapy treatment centers and is now recommended part of Quality Assurance program by many International health and radiation organizations. Because of cost and lack of specialized personnel, IVD has not been practiced as yet, in Albanian radiotherapy clinics. At Hygeia Hospital Tirana, patients are irradiated with high energy photons generated by Elekta Synergy Accelerators. We have recently started experimenting with the purpose of establishing an IVD practice at this hospital. The first set of experiments was aimed at calibration of diodes that are going to be used for IVD. PMMA, phantoms by PTW were used to calibrate p – type Si, semiconductor diode dosimeters, made by PTW Freiburg for entrance dose. Response of the detectors is affected by energy of the beam, accumulated radiation dose, dose rate, temperature, angle against the beam axis, etc. Here we present the work done for calculating calibration factor and correction factors of source to surface distance, field size, and beam incidence for the entrance dose for both 6 MV photon beam and 18 MV photon beam. Dependence of dosimeter response was found to be more pronounced with source to surface distance as compared to other variables investigated.

Evaluating terrain based criteria for snow avalanche exposure ratings using GIS

Science.gov (United States)

Delparte, Donna; Jamieson, Bruce; Waters, Nigel

2010-05-01

Snow avalanche terrain in backcountry regions of Canada is increasingly being assessed based upon the Avalanche Terrain Exposure Scale (ATES). ATES is a terrain based classification introduced in 2004 by Parks Canada to identify "simple", "challenging" and "complex" backcountry areas. The ATES rating system has been applied to well over 200 backcountry routes, has been used in guidebooks, trailhead signs and maps and is part of the trip planning component of the AVALUATOR™, a simple decision-support tool for backcountry users. Geographic Information Systems (GIS) offers a means to model and visualize terrain based criteria through the use of digital elevation model (DEM) and land cover data. Primary topographic variables such as slope, aspect and curvature are easily derived from a DEM and are compatible with the equivalent evaluation criteria in ATES. Other components of the ATES classification are difficult to extract from a DEM as they are not strictly terrain based. An overview is provided of the terrain variables that can be generated from DEM and land cover data; criteria from ATES which are not clearly terrain based are identified for further study or revision. The second component of this investigation was the development of an algorithm for inputting suitable ATES criteria into a GIS, thereby mimicking the process avalanche experts use when applying the ATES classification to snow avalanche terrain. GIS based classifications were compared to existing expert assessments for validity. The advantage of automating the ATES classification process through GIS is to assist avalanche experts with categorizing and mapping remote backcountry terrain.

A mineralogical and granulometric study of Cayambe volcano debris avalanche deposit

Science.gov (United States)

Detienne, M.; Delmelle, P.; Guevara, A.; Samaniego, P.; Bustillos, J.; Sonnet, P.; Opfergelt, S.

2013-12-01

Volcano flank/sector collapse represents one of the most catastrophic volcanic hazards. Various volcanic and non-volcanic processes are known to decrease the stability of a volcanic cone, eventually precipitating its gravitational failure. Among them, hydrothermal alteration of volcanic rocks leading to clay mineral formation is recognized as having a large negative impact on rock strength properties. Furthermore, the presence of hydrothermal clays in the collapsing mass influences the behavior of the associated volcanic debris avalanche. In particular, clay-containing debris avalanches seem to travel farther and spread more widely than avalanches of similar volume but which do not incorporate hydrothermally-altered materials. However, the relationship between hydrothermal alteration, flank collapse and debris avalanche behavior is not well understood. The objective of this study is to better determine the volume and composition of hydrothermal clay minerals in the poorly characterized debris avalanche deposit (DAD) of Cayambe composite volcano, located in a densely populated area ~70 km northeast of Quito, Ecuador. Cayambe DAD originated from a sector collapse, which occurred less than 200 ka ago. The DAD is 10-20 m thick and has an estimated total volume of ~0.85 Km3. The H/L ratio (where H is the vertical drop and L is the travel distance of the avalanche) for Cayambe DAD is ~0.095, suggesting a high mobility. In the medial-distal zone, at 9-20 km from its source, the DAD consists of an unstratified and unsorted matrix supporting millimetric to metric clasts. It has a matrix facies (i.e. rich in particles DAD behaved as a cohesive debris flow. Analysis of 13 matrix samples reveals a large variability in particle size distribution. This may reflect poor mixing of the collapsed material during transport. The clay fraction content in the matrix ranges from 15 to 30 wt.%, and does not show a relationship with the sample position in the DAD. Mineralogical

Critical state transformation in hard superconductors resulting from thermomagnetic avalanches

International Nuclear Information System (INIS)

Chabanenko, V.V.; Kuchuk, E.I.; Rusakov, V.F.; Abaloszewa, I.; Nabialek, A.; Perez-Rodriguez, F.

2016-01-01

The results of experimental investigations of magnetic flux dynamics in finite superconductors, obtained using integral and local measurements methods, are presented. Local methods were aimed at clarifying the role of demagnetizing factor in dynamic formation of a complex magnetic structure of the critical state of hard superconductors. To understand the reasons for cardinal restructuring of the induction, we further analyzed the literature data of flux dynamics visualization during avalanches, obtained by magneto-optical methods. New features in the behavior of the magnetic flux during and after the avalanche were discovered. Two stages of the formation of the induction structures in the avalanche area were established, i.e. of homogeneous and heterogeneous filling with the magnetic flux. The mechanism of the inversion of the induction profile was considered. Oscillations in the speed of the front of the magnetic flux were revealed. Transformation of the critical state near the edge of the sample was analyzed. The role of thermal effects and of de-magnetizing factor in the dissipative flux dynamics was shown. Generalized information allowed, in the framework of the Bean concept, to present a model the transformation of the picture of the induction of the critical state and of the superconducting currents of a finite superconductor as a result of flux avalanches for two regimes - of screening and trapping of the magnetic flux.

Avalanches in a Bose-Einstein condensate

NARCIS (Netherlands)

Schuster, J.; Marte, A.; Amtage, S.; Sang, B.; Rempe, G.; Beijerinck, H.C.W.

2001-01-01

Collisional avalanches are identified to be responsible for an 8-fold increase of the initial loss rate of a large 87Rb condensate. We show that the collisional opacity of an ultracold gas exhibits a critical value. When exceeded, losses due to inelastic collisions are substantially enhanced. Under

High power diode lasers emitting from 639 nm to 690 nm

Science.gov (United States)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Avalanche effect in the planar array of superheated superconductors

International Nuclear Information System (INIS)

Meagher, G.; Pond, J.; Kotlicki, A.; Turrell, B.G.; Eska, G.; Drukier, A.K.

1996-01-01

An avalanche effect has been observed in a cryogenic detector based on the planar array of superheated superconductors (PASS). The indium PASS, fabricated by photolithography on a mylar substrate, consisted of 40 well-separated lines each containing about 175 spheres of diameter 18 μm and separation 20 μm with those at the end being shielded by superconducting wire. The magnetic field was applied in the PASS plane parallel to the lines. Avalanche events in which several granules changed their state from superconducting to normal were triggered by the nucleation of the transition in a single grain by an alpha particle. (author)

Avalanche size scaling in sheared three-dimensional amorphous solid

DEFF Research Database (Denmark)

Bailey, Nicholas; Schiøtz, Jakob; Lemaître, A.

2007-01-01

We study the statistics of plastic rearrangement events in a simulated amorphous solid at T=0. Events are characterized by the energy release and the "slip volume", the product of plastic strain and system volume. Their distributions for a given system size L appear to be exponential......, but a characteristic event size cannot be inferred, because the mean values of these quantities increase as L-alpha with alpha similar to 3/2. In contrast with results obtained in 2D models, we do not see simply connected avalanches. The exponent suggests a fractal shape of the avalanches, which is also evidenced...

Analysis of avalanche risk factors in backcountry terrain based on usage frequency and accident data in Switzerland

Science.gov (United States)

Techel, F.; Zweifel, B.; Winkler, K.

2015-09-01

Recreational activities in snow-covered mountainous terrain in the backcountry account for the vast majority of avalanche accidents. Studies analyzing avalanche risk mostly rely on accident statistics without considering exposure (or the elements at risk), i.e., how many, when and where people are recreating, as data on recreational activity in the winter mountains are scarce. To fill this gap, we explored volunteered geographic information on two social media mountaineering websites - bergportal.ch and camptocamp.org. Based on these data, we present a spatiotemporal pattern of winter backcountry touring activity in the Swiss Alps and compare this with accident statistics. Geographically, activity was concentrated in Alpine regions relatively close to the main Swiss population centers in the west and north. In contrast, accidents occurred equally often in the less-frequented inner-alpine regions. Weekends, weather and avalanche conditions influenced the number of recreationists, while the odds to be involved in a severe avalanche accident did not depend on weekends or weather conditions. However, the likelihood of being involved in an accident increased with increasing avalanche danger level, but also with a more unfavorable snowpack containing persistent weak layers (also referred to as an old snow problem). In fact, the most critical situation for backcountry recreationists and professionals occurred on days and in regions when both the avalanche danger was critical and when the snowpack contained persistent weak layers. The frequently occurring geographical pattern of a more unfavorable snowpack structure also explains the relatively high proportion of accidents in the less-frequented inner-alpine regions. These results have practical implications: avalanche forecasters should clearly communicate the avalanche danger and the avalanche problem to the backcountry user, particularly if persistent weak layers are of concern. Professionals and recreationists, on the

Toward biomaterial-based implantable photonic devices

Directory of Open Access Journals (Sweden)

Humar Matjaž

2017-03-01

Full Text Available Optical technologies are essential for the rapid and efficient delivery of health care to patients. Efforts have begun to implement these technologies in miniature devices that are implantable in patients for continuous or chronic uses. In this review, we discuss guidelines for biomaterials suitable for use in vivo. Basic optical functions such as focusing, reflection, and diffraction have been realized with biopolymers. Biocompatible optical fibers can deliver sensing or therapeutic-inducing light into tissues and enable optical communications with implanted photonic devices. Wirelessly powered, light-emitting diodes (LEDs and miniature lasers made of biocompatible materials may offer new approaches in optical sensing and therapy. Advances in biotechnologies, such as optogenetics, enable more sophisticated photonic devices with a high level of integration with neurological or physiological circuits. With further innovations and translational development, implantable photonic devices offer a pathway to improve health monitoring, diagnostics, and light-activated therapies.

Optical microcavities and enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

Energy Technology Data Exchange (ETDEWEB)

Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

2013-12-21

Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al{sub 2}O{sub 3}-Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 30 nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0 eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0 eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V{sub LP}, is ∼1.5 V. V{sub LP} is nearly independent of Al{sub 2}O{sub 3} thickness and of temperature and is 0.3–0.6 V less than the threshold voltage for EL for the SP filter, V{sub SP}. EL intensity is primarily between 1.8 and 3.0 eV when the bias voltage, V{sub S} ≲ 7 V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V{sub S}, for diodes with the smallest Al{sub 2}O{sub 3} thicknesses, there is a maximum EL intensity, L{sub MX}, at a voltage, V{sub LMX}, followed by a decrease to a plateau. L{sub MX} and EL intensity at 4.0 V in the plateau region depend exponentially on Al{sub 2}O{sub 3} thickness. The ratio of L{sub MX} at 295 K for a diode with 12 nm of Al{sub 2}O{sub 3} to L{sub MX} for a diode with 25 nm of Al{sub 2}O{sub 3} is ∼140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between ∼3 and ∼35; it depends on Al{sub 2}O{sub 3} thickness and V{sub S}. Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al{sub 2}O

Fractal multiplication of electron avalanches and streamers: new mechanism of electrical breakdown?

International Nuclear Information System (INIS)

Ficker, T

2007-01-01

Long-lasting problems concerning peculiar statistical behaviour of high populated electron avalanches have been analysed. These avalanches are precursors of streamer breakdown in gases. The present streamer theory fails in explaining severe systematic deviations from the Furry statistics that is believed to be a governing statistical law. Such a deviated behaviour of high populated avalanches seems to be a consequence of a special pre-breakdown mechanism that is rather different from that known so far in discharge physics. This analysis tends towards formulating a modified theoretical concept supplementing the streamer theory by a new statistical view of pre-streamer states. The correctness of the concept is corroborated by a series of experiments

Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

International Nuclear Information System (INIS)

Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

1992-01-01

Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

International Nuclear Information System (INIS)

Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

1976-01-01

In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

Volcanic avalanche fault zone with pseudotachylite and gouge in French Massif Central

Science.gov (United States)

Bernard, Karine; van Wyk de Vries, Benjamin

2017-11-01

Structures and textures with sedimentological variations at different scales of the lithofacies assemblage help us to constrain the basal kinematic transition from non-depositional to depositional conditions during volcanic avalanche emplacement. In the well-exposed impact-sheared contact along volcanic avalanche fault zone in the French Massif Central, we observe how the granular textures of the pseudotachylite and fault gouge have recorded the propagation of shock wave with granular oscillatory stress. Sequential events of basal aggradation along avalanche fault zone have been established related to fractal D-values, temperature pressure regime and oscillatory stress during slow wave velocity. A typical lithofacies assemblage with a reverse grading shows the pseudotachylite and fault gouge. A cataclastic gradient is characterised by the fractal D-values from 2.7 in jigsaw breccias with pseudotachylite partial melt, to 2.6 in the polymodal gouge. Shock, brecciation and comminution produce cataclastic shear bands in the pseudotachylite and quartz microstructures along the basal contact of the volcanic debris-avalanche deposit. Gouge microstructures show granular segregation, cataclasis with antithetic rotational Riedel shear, and an arching effect between the Riedel shear bands. X-ray microtomography provided 3D microfabrics along the clastic vein in the sandy-gouge. From the available statistical dataset, a few equations have been developed implicating the same cataclastic origin with a co-genetic evolution of lithofacies. An impact wave during primary shear propagation may contribute to produce hydroclastic matrix, pseudotachylite partial melt and proximal gouge thixotropy with v 50m/s and a T < 654 °C. The interseismic period with oscillatory stress is related to crushed clasts and basaltic melt around 800 °C, Riedel shear bands with granular segregation along the fault gouge. The secondary shock by matrix-rich avalanche (ΔP = 10GPa, T ≥ 1000-1500 �

Effects of the active hold-off technique in 1.55-μm single-photon detection

International Nuclear Information System (INIS)

Bouzid, Abdessattar; Park, Junbum; Moon, Sung

2010-01-01

We investigate the effects of the active hold-off technique in single-photon detector (SPD) based on InGaAs/InP avalanche photodiodes (APDs). The concept of this technique is to hold-off an appropriate number of gate pulses after each recorded detection in order to wait for the trapping levels to empty. We found that at almost a 1-MHz repetition rate of the gate, such a hold-off mechanism must block at least two gate pulses after each photon click event to reduce the after-pulsing effect and does not significantly affect the count probability per gate. For higher repetition frequencies, the number of hold-off gates must be increased.

Quantum Dot Photonics

Science.gov (United States)

Kinnischtzke, Laura A.

We report on several experiments using single excitons confined to single semiconductor quantum dots (QDs). Electric and magnetic fields have previously been used as experimental knobs to understand and control individual excitons in single quantum dots. We realize new ways of electric field control by changing materials and device geometry in the first two experiments with strain-based InAs QDs. A standard Schottky diode heterostructure is demonstrated with graphene as the Schottky gate material, and its performance is bench-marked against a diode with a standard gate material, semi-transparent nickel-chromium (NiCr). This change of materials increases the photon collection rate by eliminating absorption in the metallic NiCr layer. A second set of experiments investigates the electric field response of QDs as a possible metrology source. A linear voltage potential drop in a plane near the QDs is used to describe how the spatially varying voltage profile is also imparted on the QDs. We demonstrate a procedure to map this voltage profile as a preliminary route towards a full quantum sensor array. Lastly, InAs QDs are explored as potential spin-photon interfaces. We describe how a magnetic field is used to realize a reversible exchange of information between light and matter, including a discussion of the polarization-dependence of the photoluminesence, and how that can be linked to the spin of a resident electron or hole. We present evidence of this in two wavelength regimes for InAs quantum dots, and discuss how an external magnetic field informs the spin physics of these 2-level systems. This thesis concludes with the discovery of a new class of quantum dots. As-yet unidentified defect states in single layer tungsten diselenide (WSe 2 ) are shown to host quantum light emission. We explore the spatial extent of electron confinement and tentatively identify a radiative lifetime of 1 ns for these single photon emitters.

Photodiode read-out of the ALICE photon spectrometer $PbWO_{4}$ crystals

CERN Document Server

Man'ko, V I; Sibiryak, Yu; Volkov, M; Klovning, A; Maeland, O A; Odland, O H; Rongved, R; Skaali, B

1999-01-01

Proposal of abstract for LEB99, Snowmass, Colorado, 20-24 September 1999The PHOton Spectrometer of the ALICE experiment is an electromagnetic calorimeter of high granularity consisting of 17280 lead-tungstate (PWO) crystals of dimensions 22x22x180 mm3, read out by large-area PIN-diodes with very low-noise front-end electronics. The crystal assembly is operated at -25C to increase the PWO light yield. A 16.1x17.1 mm2 photodiode, optimized for the PWO emissio spectrum at 400-500 nm, has been developed. The 20x20 mm2 preamplifier PCB is attached to the back side of the diode ceramic frame. The charge sensitive preamplifier is built in discrete logic with two input JFETs for optimum matching with the ~150pF PIN-diode. A prototype shaper has been designed and built in discrete logic. For a detector matrix of 64 units the measured ENCs are between 450-550e at -25C. Beam tests demonstrate that the required energy resolution is reached.Summary:The PHOton Spectrometer of the ALICE experiment is an electromagnetic calo...

Prediction of picosecond voltage collapse and electromagnetic wave generation in gas avalanche switches

International Nuclear Information System (INIS)

Mayhall, D.J.; Yee, J.H.; Duong-Van, M.; Villa, F.

1988-01-01

A picosecond speed switch, the Gas Avalanche Switch (GAS), has been proposed for GeV linear accelerators. The medium is gas at high pressure (100 - 700 atm). An avalanche discharge is induced between pulse-charged high voltage electrodes by electron deposition from a fast laser pulse. Avalanche electrons move to the positive electrode, causing the applied voltage to collapse in picoseconds. A two-dimensional (2D) electromagnetic electron fluid computer code calculates the avalanche evolution and voltage collapse in air for an infinite parallel plate capacitor with a 0.1 mm spacing. Calculations are done for an accelerator switch geometry consisting of a 0.7 mm wide by 0.8 mm high, rectangular, high voltage center electrode (CE) between the grounded plates of a parallel plate line of 2 mm spacing. Several variations of CE elevation and initial electron deposition are investigated The 2D character of the outgoing TEM waves is shown

Development and verification of signal processing system of avalanche photo diode for the active shields onboard ASTRO-H

Energy Technology Data Exchange (ETDEWEB)

Ohno, M., E-mail: ohno@hep01.hepl.hiroshima-u.ac.jp [Department of Physical Sciences, Hiroshima University, Hiroshima 739-8526 (Japan); Kawano, T.; Edahiro, I.; Shirakawa, H.; Ohashi, N.; Okada, C.; Habata, S.; Katsuta, J.; Tanaka, Y.; Takahashi, H.; Mizuno, T.; Fukazawa, Y. [Department of Physical Sciences, Hiroshima University, Hiroshima 739-8526 (Japan); Murakami, H.; Kobayashi, S.; Miyake, K.; Ono, K.; Kato, Y.; Furuta, Y.; Murota, Y.; Okuda, K. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); and others

2016-09-21

The hard X-ray Imager and Soft Gamma-ray Detector onboard ASTRO-H demonstrate high sensitivity to hard X-ray (5–80 keV) and soft gamma-rays (60–600 keV), respectively. To reduce the background, both instruments are actively shielded by large, thick Bismuth Germanate scintillators. We have developed the signal processing system of the avalanche photodiode in the BGO active shields and have demonstrated its effectiveness after assembly in the flight model of the HXI/SGD sensor and after integration into the satellite. The energy threshold achieved is about 150 keV and anti-coincidence efficiency for cosmic-ray events is almost 100%. Installed in the BGO active shield, the developed signal processing system successfully reduces the room background level of the main detector. - Highlights: • A detail of development of signal processing system for ASTRO-H is presented. • Digital filer with FPGA instead of discrete analog circuit is applied. • Expected performance is verified after integration of the satellite.

Special issue on recent progress in organic electronics and photonics

Institute of Scientific and Technical Information of China (English)

Fei Huang; Yong Cao

2017-01-01

Organic electronic and photonic devices have received tremendous attention from both academia and industry because of their great promise for practical use as organic light-emitting diodes(OLEDs),organic solar cells(OSCs),organic field-effect transistors(OFETs),and chemical and biological sensors.During the past decade,remarkable pro-

A comparison of electrical and photonic pulse generation for IR-UWB on fiber links

DEFF Research Database (Denmark)

Rodes Lopez, Roberto; Caballero Jambrina, Antonio; Yu, Xianbin

2010-01-01

We present and compare experimental results for electrical and photonic generation of 2-Gb/s pulses for impulse radio ultra-wideband on fiber transmission systems based on direct current modulation of a semiconductor laser diode and external optical injection of a semiconductor laser diode......, respectively. We assess the performance of the two generation approaches in terms of bit-error rate after propagation over 20 km of optical fiber followed by wireless transmission....

Infrasound array criteria for automatic detection and front velocity estimation of snow avalanches: towards a real-time early-warning system

Science.gov (United States)

Marchetti, E.; Ripepe, M.; Ulivieri, G.; Kogelnig, A.

2015-11-01

Avalanche risk management is strongly related to the ability to identify and timely report the occurrence of snow avalanches. Infrasound has been applied to avalanche research and monitoring for the last 20 years but it never turned into an operational tool to identify clear signals related to avalanches. We present here a method based on the analysis of infrasound signals recorded by a small aperture array in Ischgl (Austria), which provides a significant improvement to overcome this limit. The method is based on array-derived wave parameters, such as back azimuth and apparent velocity. The method defines threshold criteria for automatic avalanche identification by considering avalanches as a moving source of infrasound. We validate the efficiency of the automatic infrasound detection with continuous observations with Doppler radar and we show how the velocity of a snow avalanche in any given path around the array can be efficiently derived. Our results indicate that a proper infrasound array analysis allows a robust, real-time, remote detection of snow avalanches that is able to provide the number and the time of occurrence of snow avalanches occurring all around the array, which represent key information for a proper validation of avalanche forecast models and risk management in a given area.

Spatially Extended Avalanches in a Hysteretic Capillary Condensation System: Superfluid 4He in Nuclepore

International Nuclear Information System (INIS)

Lilly, M.P.; Wootters, A.H.; Hallock, R.B.

1996-01-01

Capacitive studies of hysteretic capillary condensation of superfluid 4 He in Nuclepore have shown that the initial draining of the pores occurs over a small range of the chemical potential with avalanches present as groups of pores drain. In the work reported here, the avalanches in this system are shown to be nonlocal events which involve pores distributed at low density across the entire sample. The nonlocal avalanche behavior is shown to be enabled by the presence of a superfluid film connection among the pores. copyright 1996 The American Physical Society

On the relativistic large-angle electron collision operator for runaway avalanches in plasmas

Science.gov (United States)

Embréus, O.; Stahl, A.; Fülöp, T.

2018-02-01

Large-angle Coulomb collisions lead to an avalanching generation of runaway electrons in a plasma. We present the first fully conservative large-angle collision operator, derived from the relativistic Boltzmann operator. The relation to previous models for large-angle collisions is investigated, and their validity assessed. We present a form of the generalized collision operator which is suitable for implementation in a numerical kinetic equation solver, and demonstrate the effect on the runaway-electron growth rate. Finally we consider the reverse avalanche effect, where runaways are slowed down by large-angle collisions, and show that the choice of operator is important if the electric field is close to the avalanche threshold.

Reducing financial avalanches by random investments

Science.gov (United States)

Biondo, Alessio Emanuele; Pluchino, Alessandro; Rapisarda, Andrea; Helbing, Dirk

2013-12-01

Building on similarities between earthquakes and extreme financial events, we use a self-organized criticality-generating model to study herding and avalanche dynamics in financial markets. We consider a community of interacting investors, distributed in a small-world network, who bet on the bullish (increasing) or bearish (decreasing) behavior of the market which has been specified according to the S&P 500 historical time series. Remarkably, we find that the size of herding-related avalanches in the community can be strongly reduced by the presence of a relatively small percentage of traders, randomly distributed inside the network, who adopt a random investment strategy. Our findings suggest a promising strategy to limit the size of financial bubbles and crashes. We also obtain that the resulting wealth distribution of all traders corresponds to the well-known Pareto power law, while that of random traders is exponential. In other words, for technical traders, the risk of losses is much greater than the probability of gains compared to those of random traders.

Avalanches in Mn12-Acetate: ``Magnetic Burning"

Science.gov (United States)

McHugh, Sean; Suzuki, Y.; Graybill, D.; Sarachik, M. P.; Avraham, N.; Myasoedov, Y.; Shtrikman, H.; Zeldov, E.; Bagai, R.; Chakov, N. E.; Christou, G.

2006-03-01

From local time-resolved measurements of fast reversal of the magnetization in single crystals of the molecular magnet Mn12-acetate, we have shown[1] that the magnetization avalanche spreads as a narrow interface that propagates through the crystal at a constant velocity roughly two orders of magnitude smaller than the speed of sound. This phenomenon is closely analogous to the propagation of a flame front (deflagration) through a flammable chemical substance. The propagation speed of the avalanche depends on the energy stored in each molecule, which can be controlled and tuned using an external magnetic field. We report studies of propagation speed with different external fields in Mn12-acetate. [1] Yoko Suzuki, M.P. Sarachik, E.M. Chudnovsky, S. McHugh, R. Gonzalez-Rubio, N. Avraham, Y. Myasoedov, H. Shtrikman, E. Zeldov, N.E. Chakov and G. Christou, Phys. Rev. Lett. 95, 147201 (2005).

Using GIS and Google Earth for the creation of the Going-to-the-Sun Road Avalanche Atlas, Glacier National Park, Montana, USA

Science.gov (United States)

Peitzsch, Erich H.; Fagre, Daniel B.; Dundas, Mark

2010-01-01

Snow avalanche paths are key geomorphologic features in Glacier National Park, Montana, and an important component of mountain ecosystems: they are isolated within a larger ecosystem, they are continuously disturbed, and they contain unique physical characteristics (Malanson and Butler, 1984). Avalanches impact subalpine forest structure and function, as well as overall biodiversity (Bebi et al., 2009). Because avalanches are dynamic phenomena, avalanche path geometry and spatial extent depend upon climatic regimes. The USGS/GNP Avalanche Program formally began in 2003 as an avalanche forecasting program for the spring opening of the ever-popular Going-to-the-Sun Road (GTSR), which crosses through 37 identified avalanche paths. Avalanche safety and forecasting is a necessary part of the GTSR spring opening procedures. An avalanche atlas detailing topographic parameters and oblique photographs was completed for the GTSR corridor in response to a request from GNP personnel for planning and resource management. Using ArcMap 9.2 GIS software, polygons were created for every avalanche path affecting the GTSR using aerial imagery, field-based observations, and GPS measurements of sub-meter accuracy. Spatial attributes for each path were derived within the GIS. Resulting products include an avalanche atlas book for operational use, a geoPDF of the atlas, and a Google Earth flyover illustrating each path and associated photographs. The avalanche atlas aids park management in worker safety, infrastructure planning, and natural resource protection by identifying avalanche path patterns and location. The atlas was created for operational and planning purposes and is also used as a foundation for research such as avalanche ecology projects and avalanche path runout modeling.

The development of structures in analogue and natural debris avalanches

Science.gov (United States)

Paguican, Engielle Mae; van Wyk de Vries, Benjamin; Mahar Francisco Lagmay, Alfredo; Grosse, Pablo

2010-05-01

All types of rockslide-debris avalanches present a plethora of internal structures that are also well observed on the surface. Many of these are seen as faults and folds that can be used to determine deformation history and kinematics. We present two sets of simple and well-constrained experiments of reduced basal friction laboratory rockslides, equivalent to a highly deformed simple shear layer, with plug-flow. These follow the original ramp-slide work of Shea and van Wyk de Vries (Geosphere, 2008). The experiments used a curved ramp where materials accelerate until reaching a gently-sloped depositional surface and a constantly inclined ramp with a more regular slope and longer slides. A detailed description of deposit structures, their sequential formation and morphology is then used to investigate the transport type and deformation chronology from slide initiation to runout stopping of avalanches. Results using a curved ramp show accumulation and thickening at where the slope decreases. The thickened mass then further remobilises and advances by secondary collapse of the mass. Such a stop-start process may be important in many mountainous avalanches where there are rapid changes in slope. The constantly inclined ramp shows shearing and extensional structures at the levees and a set of compression and extension structures in the middle. We noted that frontal accumulation during flow occurs as materials at the front move slower relative to those in the medial and proximal zones. This also leads to secondary frontal collapse, and helps to maintain a thicker mass that can flow further. Descriptions and analyses of these structures are then applied to the kinematics and dynamics of natural examples. We study the 2006 Guinsaugon Rockslide event in the Philippines and find that frontal accumulation and secondary avalanching had also occurred and were important in determining the distribution and runout of the mass. Frontal bulking and collapse may also have occurred at

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao