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Sample records for phase change thin

  1. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    Science.gov (United States)

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

  2. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    NARCIS (Netherlands)

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  3. Locally formation of Ag nanoparticles in chalcogenide phase change thin films induced by nanosecond laser pulses

    International Nuclear Information System (INIS)

    Huang, Huan; Zhang, Lei; Wang, Yang; Han, Xiaodong; Wu, Yiqun; Zhang, Ze; Gan, Fuxi

    2012-01-01

    A simple method to optically synthesize Ag nanoparticles in Ge 2 Sb 2 Te 5 phase change matrix is described. The fine structures of the locally formed phase change chalcogenide nanocomposite are characterized by high-resolution transmission electron microscopy. The formation mechanism of the nanocomposite is discussed with temperature evolution and distribution simulations. This easy-prepared metal nano-particle-embedded phase change microstructure will have great potential in nanophotonics applications, such as for plasmonic functional structures. This also provides a generalized approach to the preparation of well-dispersed nanoparticle-embedded composite thin films in principle. -- Highlights: ► We describe a method to prepare chalcogenide microstructures with Ag nanoparticles. ► We give the fine structural images of phase change nanocomposites. ► We discuss the laser-induced fusion mechanism by temperature simulation. ► This microstructure will have great potential in nanophotonics applications.

  4. Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

    Science.gov (United States)

    Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-08-16

    A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

  5. Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

    International Nuclear Information System (INIS)

    Huang Huan; Li Simian; Zhai Fengxiao; Wang Yang; Lai Tianshu; Wu Yiqun; Gan Fuxi

    2011-01-01

    Highlights: → We reported crystallization dynamics of a novel SiSb phase change material. → We measured optical constants of as-deposited and irradiated SiSb areas. → Optical properties of as-deposited and irradiated SiSb thin film were compared. → Crystallization of irradiated SiSb was confirmed by using AFM and micro-Raman spectra. → The heat conduction effect of lower metal layer of multi-layer films was studied. - Abstract: Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.

  6. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    International Nuclear Information System (INIS)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-01-01

    The stability of the crystalline phase of binary phase-change Ge x Sb 1-x films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T Ge p to the rate of change dT cryst /dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T cryst is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  7. Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory.

    Science.gov (United States)

    Wu, Weihua; Zhao, Zihan; Shen, Bo; Zhai, Jiwei; Song, Sannian; Song, Zhitang

    2018-04-19

    Amorphous Ge8Sb92 thin films with various thicknesses were deposited by magnetron sputtering. The crystallization kinetics and optical properties of the Ge8Sb92 thin films and related scaling effects were investigated by an in situ thermally induced method and an optical technique. With a decrease in film thickness, the crystallization temperature, crystallization activation energy and data retention ability increased significantly. The changed crystallization behavior may be ascribed to the smaller grain size and larger surface-to-volume ratio as the film thickness decreased. Regardless of whether the state was amorphous or crystalline, the film resistance increased remarkably as the film thickness decreased to 3 nm. The optical band gap calculated from the reflection spectra increases distinctly with a reduction in film thickness. X-ray diffraction patterns confirm that the scaling of the Ge8Sb92 thin film can inhibit the crystallization process and reduce the grain size. The values of exponent indices that were obtained indicate that the crystallization mechanism experiences a series of changes with scaling of the film thickness. The crystallization time was estimated to determine the scaling effect on the phase change speed. The scaling effect on the electrical switching performance of a phase change memory cell was also determined. The current-voltage and resistance-voltage characteristics indicate that phase change memory cells based on a thinner Ge8Sb92 film will exhibit a higher threshold voltage, lower RESET operational voltage and greater pulse width, which implies higher thermal stability, lower power consumption and relatively lower switching velocity.

  8. Synthesis and Screening of Phase Change Chalcogenide Thin Film Materials for Data Storage.

    Science.gov (United States)

    Guerin, Samuel; Hayden, Brian; Hewak, Daniel W; Vian, Chris

    2017-07-10

    A combinatorial synthetic methodology based on evaporation sources under an ultrahigh vacuum has been used to directly synthesize compositional gradient thin film libraries of the amorphous phases of GeSbTe alloys at room temperature over a wide compositional range. An optical screen is described that allows rapid parallel mapping of the amorphous-to-crystalline phase transition temperature and optical contrast associated with the phase change on such libraries. The results are shown to be consistent with the literature for compositions where published data are available along the Sb 2 Te 3 -GeTe tie line. The results reveal a minimum in the crystallization temperature along the Sb 2 Te 3 -Ge 2 Te 3 tie line, and the method is able to resolve subsequent cubic-to-hexagonal phase transitions in the GST crystalline phase. HT-XRD has been used to map the phases at sequentially higher temperatures, and the results are reconciled with the literature and trends in crystallization temperatures. The results clearly delineate compositions that crystallize to pure GST phases and those that cocrystallize Te. High-throughput measurement of the resistivity of the amorphous and crystalline phases has allowed the compositional and structural correlation of the resistivity contrast associated with the amorphous-to-crystalline transition, which range from 5-to-8 orders of magnitude for the compositions investigated. The results are discussed in terms of the compromises in the selection of these materials for phase change memory applications and the potential for further exploration through more detailed secondary screening of doped GST or similar classes of phase change materials designed for the demands of future memory devices.

  9. Refractive index modulation of Sb70Te30 phase-change thin films by multiple femtosecond laser pulses

    International Nuclear Information System (INIS)

    Lei, Kai; Wang, Yang; Jiang, Minghui; Wu, Yiqun

    2016-01-01

    In this study, the controllable effective refractive index modulation of Sb 70 Te 30 phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

  10. All-optically tunable EIT-like dielectric metasurfaces hybridized with thin phase change material layers

    Science.gov (United States)

    Petronijevic, Emilija; Sibilia, Concita

    2017-05-01

    Electromagnetically induced transparency (EIT), a pump-induced narrow transparency window within the absorption region of a probe, had offered new perspectives in slow-light control in atomic physics. For applications in nanophotonics, the implementation on chip-scaled devices has later been obtained by mimicking this effect by metallic metamaterials. High losses in visible and near infrared range of metal-based metamaterialls have recently opened a new field of all-dielectric metamaterials; a proper configuration of high refractive index dielectric nanoresonators can mimick this effect without losses to get high Q, slow-light response. The next step would be the ability to tune their optical response, and in this work we investigate thin layers of phase change materials (PCM) for all-optical control of EIT-like all-dielectric metamaterials. PCM can be nonvolatively and reversibly switched between two stable phases that differ in optical properties by applying a visible laser pulse. The device is based on Si nanoresonators covered by a thin layer of PCM GeTe; optical and transient thermal simulations have been done to find and optimize the fabrication parameters and switching parameters such as the intensity and duration of the pulse. We have found that the EIT-like response can be switched on and off by applying the 532nm laser pulse to change the phase of the upper GeTe layer. We strongly believe that such approach could open new perspectives in all-optically controlled slow-light metamaterials.

  11. Phase Change Activation and Characterization of Spray-Deposited Poly(vinylidene) Fluoride Piezoelectric Thin Films

    Science.gov (United States)

    Riosbaas, Miranda Tiffany

    Structural safety and integrity continues to be an issue of utmost concern in our world today. Existing infrastructures in civil, commercial, and military applications are beginning to see issues associated with age and environmental conditions. In addition, new materials are being put to service that are not yet fully characterized and understood when it comes to long term behavior. In order to assess the structural health of both old and new materials, it is necessary to implement a technique for monitoring wear and tear. Current methods that are being used today typically depend on visual inspection techniques or handheld instruments. These methods are not always ideal for large structures as they become very tedious leading to a substantial amount of both time and money spent. More recently, composite materials have been introduced into applications that can benefit from high strength-to-weight ratio materials. However, the use of more complex materials (such as composites) leads to a high demand of structural health monitoring techniques, since the damage is often internal and not visible to the naked eye. The work performed in this thesis examines the methods that can be used for phase change activation and characterization of sprayable poly(vinylidene) fluoride (PVDF) thin films in order to exploit their piezoelectric characteristics for sensing applications. PVDF is widely accepted to exist in four phases: alpha, beta, gamma, and delta. Alpha phase PVDF is produced directly from the melt and exhibits no piezoelectric properties. The activation or transition from α phase to some combination of beta and/or gamma phase PVDF leads to a polarizable piezoelectric thin film to be used in sensing applications. The work herein presents the methods used to activate phase change in PVDF, such as mechanical stretching, annealing, and chemical composition, to be able to implement PVDF as an impact detection sensor. The results and analysis provided in this thesis will

  12. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    Science.gov (United States)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2015-07-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

  13. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

    2015-01-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

  14. Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

    Directory of Open Access Journals (Sweden)

    C. C. Huang

    2012-01-01

    Full Text Available Germanium antimony (Ge-Sb thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD. Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875°C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM with energy dispersive X-ray analysis (EDX and X-ray diffraction (XRD techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2–2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

  15. Optical pump-and-probe test system for thermal characterization of thin metal and phase-change films

    International Nuclear Information System (INIS)

    Watabe, Kazuo; Polynkin, Pavel; Mansuripur, Masud

    2005-01-01

    A single-shot optical pump-and-probe test system is reported. The system is designed for thermal characterization of thin-film samples that can change their phase state under the influence of a short and intense laser pulse on a subnanosecond time scale. In combination with numerical analysis, the system can be used to estimate thermal constants of thin films, such as specific heat and thermal conductivity. In-plane and out-of plane thermal conductivity can be estimated independently. The system is intended for use in research on optical data storage and material processing with pulsed laser light. The system design issues are discussed. As application examples, we report on using the system to study thermal dynamics in two different thin-film samples: a gold film on a glass substrate (a single-phase system) and the quadrilayer phase-change stack typical in optical data-storage applications

  16. Young's modulus and residual stress of GeSbTe phase-change thin films

    NARCIS (Netherlands)

    Nazeer, H.; Bhaskaran, Harish; Woldering, L.A.; Abelmann, Leon

    2015-01-01

    The mechanical properties of phase change materials alter when the phase is transformed. In this paper, we report on experiments that determine the change in crucial parameters such as Young's modulus and residual stress for two of the most widely employed compositions of phase change films,

  17. Optimization of Phase Change Memory with Thin Metal Inserted Layer on Material Properties

    Science.gov (United States)

    Harnsoongnoen, Sanchai; Sa-Ngiamsak, Chiranut; Siritaratiwat, Apirat

    This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns.

  18. Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

    Science.gov (United States)

    Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

    2016-12-01

    In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

  19. Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power

    International Nuclear Information System (INIS)

    Huang Huan; Zhang Lei; Wang Yang; Han Xiaodong; Wu Yiqun; Zhang Ze; Gan Fuxi

    2011-01-01

    Research highlights: → We study the optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization. → The optical and dielectric constants, absorption coefficient of Si 15 Sb 85 change regularly with the increasing laser power. → The optical band gaps of Si 15 Sb 85 irradiated upon different power lasers were calculated. → HRTEM images of the samples were observed and the changes of optical and dielectric constants are determined by crystalline structures changes of the films. - Abstract: The optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices.

  20. Indium selenide (In2Se3) thin film for phase-change memory

    International Nuclear Information System (INIS)

    Lee, Heon; Kang, Dae-Hwan; Tran, Lung

    2005-01-01

    A cross-point type phase-change random access memory (PRAM) device without an access transistor is successfully fabricated with the In 2 Se 3 -phase-change resistor, which has much higher electrical resistivity than Ge 2 Sb 2 Te 5 and of which electric resistivity can be varied by the factor of 10 5 times, related with the degree of crystallization. Due to its higher electrical resistivity, the switching power can be delivered more effectively. Since In 2 Se 3 is single-phase binary compound, the device failure related to phase decomposition can be avoided. Since the volume of phase change is very limited, and the heating duration is only for few tens of nanoseconds to 10 μs, the transition of In 2 Se 3 -phase-change material is done under very far from its thermodynamic equilibrium condition, and thus, formation of the secondary phases or different crystalline phases was not observed. The static mode switching (dc test) is tested for the 5 μm-sized In 2 Se 3 PRAM device. In the first sweep, the as-grown amorphous In 2 Se 3 resistor showed the high resistance state at low voltage region. However, when it reached the threshold voltage, the electrical resistance of the device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the 5 μm-sized In 2 Se 3 PRAM device shows that the reset (crystalline → amorphous) of the device was done with a 70 ns-3.1 V pulse and the set (amorphous → crystalline) of the device was done with a 10 μs-1.2 V pulse. As high as 100 of switching dynamic range (ratio of R high to R low ) was observed

  1. Phase-change thin films : resistance switching and isothermal crystallization studies

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy

    2008-01-01

    Phase-change materials are identified as promising candidates for the future non-volatile memory applications. It is crucial to develop potential methods and technologies for the materials to meet the future data storage requirements such as high data storage density and high data transfer rate. A

  2. Polarity-dependent reversible resistance switching in Ge-Sb-Te phase-change thin films

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff T. M.; Pauza, Andrew

    2007-01-01

    In this paper, we demonstrate reversible resistance switching in a capacitorlike cell using a Ge-Sb-Te film that does not rely on amorphous-crystalline phase change. The polarity of the applied electric field switches the cell resistance between lower- and higher-resistance states, as was observed

  3. Refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films by multiple femtosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Kai; Wang, Yang, E-mail: ywang@siom.ac.cn; Jiang, Minghui; Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2016-05-07

    In this study, the controllable effective refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

  4. Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

    International Nuclear Information System (INIS)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-01-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  5. Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-07-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  6. Phase change dynamics in a polymer thin film upon femtosecond and picosecond laser irradiation

    International Nuclear Information System (INIS)

    Bonse, J.; Wiggins, S.M.; Solis, J.; Lippert, T.

    2005-01-01

    The influence of the pulse duration on the laser-induced changes in a thin triazenepolymer film on a glass substrate has been investigated for single, near-infrared (800 nm) Ti:sapphire laser pulses with durations ranging from 130 fs up to 2.6 ps. Post-irradiation optical microscopy has been used to quantitatively determine the damage threshold fluence. The latter decreases from ∼800 mJ/cm 2 for a 2.6 ps laser pulse to ∼500 mJ/cm 2 for a pulse duration of 130 fs. In situ real-time reflectivity (RTR) measurements have been performed using a ps-resolution streak camera set-up to study the transformation dynamics upon excitation with single pulses of duration of 130 fs and fluences close to the damage threshold. Very different reflectivity transients have been observed above and below the damage threshold fluence. Above the damage threshold, an extremely complicated behaviour with oscillations of up to 100% in the transient reflectivity has been observed. Below the damage threshold, the transient reflectivity decreases by as much as 70% within 1 ns with a subsequent recovery to the initial level occurring on the ms timescale. No apparent damage could be detected by optical microscopy under these irradiation conditions. Furthermore, within the 395-410 mJ/cm 2 fluence range, the transient reflectivity increases by ∼10%. The analysis of these results indicates that the observed transformations are thermal in nature, in contrast to the known photochemical decomposition of this triazenepolymer under UV irradiation

  7. Loop-Mediated Isothermal Amplification Using a Lab-on-a-Disc Device with Thin-film Phase Change Material.

    Science.gov (United States)

    Ko, Junguk; Yoo, Jae-Chern

    2018-03-05

    The design and fabrication of temperature measurement systems that facilitate successful realization of DNA amplification using a lab-on-a-disc (LOD) device are a highly challenging task. The major challenge lies in the fact that such a system must be directly attached to a heating chamber in a way that enables the accurate measurement of temperature of the chamber while allowing the LOD to rotate. This paper presents a temperature control system for implementing isothermal amplification of DNA samples using an LOD device. The proposed system utilizes a thin-film phase change material and non-contact heating system to remotely measure the actual temperature of the chamber and, if required, rapidly heat it to the desired temperature. The results of the experiments performed in this study demonstrate that the proposed system provides an automated platform for molecular amplification and exhibits an operational performance comparable to that of traditional microcentrifuge tube-based isothermal amplification systems.

  8. Molecular dynamics study on the effect of boundary heating rate on the phase change characteristics of thin film liquid

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Mohammad Nasim, E-mail: nasim@me.buet.ac.bd.com; Morshed, A. K. M. Monjur, E-mail: shavik@me.buet.ac.bd.com; Rabbi, Kazi Fazle, E-mail: rabbi35.me10@gmail.com; Haque, Mominul, E-mail: mominulmarup@gmail.com [Department of Mechanical Engineering, Bangladesh University of Engineering and Technology (BUET) Dhaka-1000 (Bangladesh)

    2016-07-12

    In this study, theoretical investigation of thin film liquid phase change phenomena under different boundary heating rates has been conducted with the help of molecular dynamics simulation. To do this, the case of argon boiling over a platinum surface has been considered. The study has been conducted to get a better understanding of the nano-scale physics of evaporation/boiling for a three phase system with particular emphasis on the effect of boundary heating rate. The simulation domain consisted of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system was brought to an equilibrium state at 90 K with the help of equilibrium molecular dynamics and then the temperature of the bottom wall was increased to a higher temperature (250 K/130 K) over a finite heating period. Depending on the heating period, the boundary heating rate has been varied in the range of 1600×10{sup 9} K/s to 8×10{sup 9} K/s. The variations of argon region temperature, pressure, net evaporation number with respect to time under different boundary heating rates have been determined and discussed. The heat fluxes normal to platinum wall for different cases were also calculated and compared with theoretical upper limit of maximum possible heat transfer to elucidate the effect of boundary heating rate.

  9. Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

    2008-01-01

    Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

  10. Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

    Science.gov (United States)

    Huang, Ruomeng; Kissling, Gabriela P.; Jolleys, Andrew; Bartlett, Philip N.; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. `Kees'

    2015-11-01

    We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

  11. Sequence control of phase separation and dewetting in PS/PVME blend thin films by changing molecular weight of PS.

    Science.gov (United States)

    Xia, Tian; Qin, Yaping; Huang, Yajiang; Huang, Ting; Xu, Jianhui; Li, Youbing

    2016-11-28

    The morphology evolution mechanism of polystyrene (PS)/poly (vinyl methyl ether) (PVME) blend thin films with different PS molecular weights (M w ) was studied. It was found that the morphology evolution was closely related to the molecular weight asymmetry between PS and PVME. In the film where M w (PS) ≈ M w (PVME), dewetting happened at the interface between the bottom layer and substrate after SD phase separation. While in the film where M w (PS) > M w (PVME), dewetting happened at the interface between the middle PS/PVME blend layer and bottom PVME layer near the substrate prior to phase separation. The different sequences of phase separation and dewetting and different interface for dewetting occurrence were studied by regarding the competitive effects of viscoelasticity contrast between polymer components and preferential wetting between PVME and the substrate. The viscoelastic nature of the PS component played a crucial role in the sequence of phase separation and dewetting.

  12. Method for determining thermo-physical properties of specimens. [photographic recording of changes in thin film phase-change temperature indicating material in wind tunnel

    Science.gov (United States)

    Jones, R. A. (Inventor)

    1974-01-01

    The square root of the product of thermophysical properties q, c and k, where p is density, c is specific heat and k is thermal conductivity, is determined directly on a test specimen such as a wind tunnel model. The test specimen and a reference specimen of known specific heat are positioned at a given distance from a heat source. The specimens are provided with a coating, such as a phase change coating, to visually indicate that a given temperature was reached. A shutter interposed between the heat source and the specimens is opened and a motion picture camera is actuated to provide a time record of the heating step. The temperature of the reference specimen is recorded as a function of time. The heat rate to which both the test and reference specimens were subjected is determined from the temperature time response of the reference specimen by the conventional thin-skin calorimeter equation.

  13. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Rodríguez, C.A. [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile); Porcile-Saavedra, P.F. [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Trejo-Cruz, C. [Department of Physics, Faculty of Science, University of Biobío, Avenue Collao 1202, Box 5C, Concepción 4051381 (Chile)

    2016-07-15

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films. - Graphical abstract: “Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution” by M. G. Sandoval-Paz, C. A. Rodríguez, P. F. Porcile-Saavedra, C. Trejo-Cruz. Display Omitted - Highlights: • Copper (I) selenide thin films were obtained by chemical bath deposition. • Orthorhombic to cubic phase change was induced by varying the reaction solution pH. • Orthorhombic phase is obtained mainly from a hydroxides cluster mechanism. • Cubic phase is obtained mainly from an ion by ion mechanism. • Structural, optical and electrical properties are presented as a function of pH.

  14. Characterization of phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films by laser-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Alvi, M.A., E-mail: alveema@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi 110025 (India); Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2013-02-15

    Highlights: Black-Right-Pointing-Pointer Effect of laser-irradiation on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by X-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Laser-irradiation causes a decrease in optical band gap in Ga{sub 15}Se{sub 77}Ag{sub 8} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non-direct transitions predominate. - Abstract: Phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films were prepared by thermal evaporation technique. Thin films were then irradiated by Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser for different time intervals. The X-ray structural characterization revealed the amorphous nature of as-prepared films while the laser irradiated films show the polycrystalline nature. Field Emission Scanning Electron Microscope (FESEM) has been used to study the structural changes. The results are discussed in terms of the structural aspects and amorphous to crystalline phase change in Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap of the Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The optical constants of these thin films are measured by using the absorption spectra measurements as a function of photon energy in the wavelength region 400-1100 nm. It is found that the optical band gap decreases while the absorption coefficient and extinction coefficient increases with increasing the laser-irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state. The dc

  15. Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

    2015-11-15

    The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

  16. Real-time observation of the phase transformations and microstructural changes during the incorporation of In into a thin Cu film at 770 K

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Alvarez, H., E-mail: humberto.rodriguez.inl@gmail.com [Helmholtz Zentrum Berlin, Hahn Meitner Platz 1, 14109 Berlin (Germany); International Iberian Nanotechnology Laboratory, Avenida Mestre Jose Veiga s/n, 4715-330 Braga (Portugal); Weber, A.; Mainz, R.; Klaus, M.; Kaufmann, C.A.; Rissom, T.; Genzel, C.; Schock, H.-W. [Helmholtz Zentrum Berlin, Hahn Meitner Platz 1, 14109 Berlin (Germany)

    2014-03-05

    Highlights: • Phase transformations during incorporation of In into a Cu film at 770 K. • Real-time X-ray diffraction. • Transitions in accordance with phase diagram. • No crystalline phases for In concentrations higher than 52 at.%. • Relative expansion of the α-Cu(In) and δ-Cu{sub 7}In{sub 3} phases quantified. -- Abstract: We use synchrotron-based energy-dispersive X-ray diffraction to study in real-time the phase transformations during the incorporation of thermally evaporated In into a thin Cu film at 770 K. Most of the phase transitions are in agreement with the Cu–In phase diagram. We measure a linear increase of the relative lattice expansion of the α-Cu(In) and δ-Cu{sub 7}In{sub 3} phases as In is incorporated into them. A radical change in the preferred orientation of the grains is observed at an In concentration of 37 at.% which we explain with the appearance of a liquid phase. In contrast to the phase diagram, we do not observe any crystalline phases for In concentrations higher than 52 at.%.

  17. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sherchenkov, A. A. [National Research University of Electronic Technology (Russian Federation); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Lazarenko, P. I.; Babich, A. V. [National Research University of Electronic Technology (Russian Federation); Bogoslovskiy, N. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sagunova, I. V.; Redichev, E. N. [National Research University of Electronic Technology (Russian Federation)

    2017-02-15

    The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

  18. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

    Science.gov (United States)

    Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

    2018-04-01

    The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

  19. In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

    Science.gov (United States)

    Berthier, R.; Bernier, N.; Cooper, D.; Sabbione, C.; Hippert, F.; Noé, P.

    2017-09-01

    The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells.

  20. The phase-change kinetics of amorphous Ge2Sb2Te5 and device characteristics investigated by thin-film mechanics

    International Nuclear Information System (INIS)

    Cho, Ju-Young; Kim, Dohyung; Park, Yong-Jin; Yang, Tae-Youl; Lee, Yoo-Yong; Joo, Young-Chang

    2015-01-01

    For high switching speed and high reliability of phase-change random access memory (PcRAM), we need to identify materials that enable fast crystallization at elevated temperatures but are stable at and above room temperature. Achieving this goal requires a breakthrough in our understanding of the unique crystallization kinetics of amorphous phase change materials as a fragile glass, described as the non-Arrhenius behavior of atomic mobility. It is a highly rewarding task to unravel the unconventional crystallization kinetics and related properties, because these properties can be utilized to predict the device characteristics. This manuscript utilizes the thin-film mechanics to investigate the crystallization kinetics of amorphous Ge 2 Sb 2 Te 5 phase-change materials doped with Al, Bi, C and N, which is an effective method to analyze the structural changes in amorphous materials. Crystallization temperature, super-cooled liquid region, glass transition temperature and fragility are measured to describe the crystallization kinetics tuned by doping; characteristic fragile-to-strong transition is observed for C and N dopings due to their structural feature as an interstitial dopant. Consequently, doping effects on the phase stability and atomic mobility manifested by the crystallization temperature and the super-cooled liquid region (or 1/fragility) successfully correspond with PcRAM characteristics, i.e., reliability and switching speed, respectively

  1. Thin film structures and phase stability

    International Nuclear Information System (INIS)

    Clemens, B.M.; Johnson, W.L.

    1990-01-01

    This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

  2. Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices.

    Science.gov (United States)

    Taha, Mohammad; Walia, Sumeet; Ahmed, Taimur; Headland, Daniel; Withayachumnankul, Withawat; Sriram, Sharath; Bhaskaran, Madhu

    2017-12-20

    Vanadium has 11 oxide phases, with the binary VO 2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO 2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO 2 synthesis have also been standing issues in VO 2 fabrication. Here, we address these major challenges in harnessing the functionality in VO 2 by demonstrating an approach that enables crystalline, switchable VO 2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO 2 on any substrate, thereby exploiting its untapped potential.

  3. Influences of W Content on the Phase Transformation Properties and the Associated Stress Change in Thin Film Substrate Combinations Studied by Fabrication and Characterization of Thin Film V1- xW xO2 Materials Libraries.

    Science.gov (United States)

    Wang, Xiao; Rogalla, Detlef; Ludwig, Alfred

    2018-04-09

    The mechanical stress change of VO 2 film substrate combinations during their reversible phase transformation makes them promising for applications in micro/nanoactuators. V 1- x W x O 2 thin film libraries were fabricated by reactive combinatorial cosputtering to investigate the effects of the addition of W on mechanical and other transformation properties. High-throughput characterization methods were used to systematically determine the composition spread, crystalline structure, surface topography, as well as the temperature-dependent phase transformation properties, that is, the hysteresis curves of the resistance and stress change. The study indicates that as x in V 1- x W x O 2 increases from 0.007 to 0.044 the crystalline structure gradually shifts from the VO 2 (M) phase to the VO 2 (R) phase. The transformation temperature decreases by 15 K/at. % and the resistance change is reduced to 1 order of magnitude, accompanied by a wider transition range and a narrower hysteresis with a minimal value of 1.8 K. A V 1- x W x O 2 library deposited on a Si 3 N 4 /SiO 2 -coated Si cantilever array wafer was used to study simultaneously the temperature-dependent stress change σ( T) of films with different W content through the phase transformation. Compared with σ( T) of ∼700 MPa of a VO 2 film, σ( T) in V 1- x W x O 2 films decreases to ∼250 MPa. Meanwhile, σ( T) becomes less abrupt and occurs over a wider temperature range with decreased transformation temperatures.

  4. Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

    Science.gov (United States)

    Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-10-06

    Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

  5. Effect of tungsten on the phase-change properties of Ge{sub 8}Sb{sub 2}Te{sub 11} Thin Films for the Phase-change device

    Energy Technology Data Exchange (ETDEWEB)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin [Chonnam National University, Gwangju (Korea, Republic of)

    2017-07-15

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge{sub 8}Sb{sub 2}Te{sub 11} thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge{sub 8}Sb{sub 2}Te{sub 11} and W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E{sub op}), slope B{sup 1/2}, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B{sup 1/2} and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T{sub c}). An increase in the T{sub c} increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R{sub s}) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  6. Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications

    Science.gov (United States)

    Privitera, S. M. S.; Sousa, V.; Bongiorno, C.; Navarro, G.; Sabbione, C.; Carria, E.; Rimini, E.

    2018-04-01

    The atomic diffusion and compositional variations upon melting have been studied by transmission electron microscopy and electron energy loss spectroscopy in Ge rich GeSbTe films, with a composition optimized for memory applications. Melting and quenching has been achieved by laser pulses, in order to study pure thermal diffusion without electric field induced electromigration. The effect of different laser energy densities has been investigated. The diffusion of Ge atoms in the molten phase is found to be a prominent mechanism and, by employing finite elements computational analysis, a diffusion coefficient of Ge on the order of 5  ×  10-5 cm2 s-1 has been estimated.

  7. Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

    2017-04-15

    Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

  8. Structural phase change and optical band gap bowing in hot wall deposited CdSe{sub x}Te{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore, Tamilnadu (India); Jayakumar, S.; Kannan, M.D.; Balasundaraprabhu, R. [Thin Film Center, PSG College of Technology, Coimbatore, Tamilnadu (India)

    2009-04-15

    CdSe{sub x}Te{sub 1-x} thin films of different compositions have been deposited on glass substrates by hot wall deposition method under conditions very close to thermodynamical equilibrium with minimum loss of material. The structural studies carried out on the deposited films revealed that they are crystalline in nature and exhibit either cubic zinc blende or hexagonal phase or both depending on the composition of the material. The lattice parameter values for both cubic and hexagonal phases have been determined and are observed to vary with composition according to Vegard's law. The optical properties of the deposited CdSe{sub x}Te{sub 1-x} thin films have been studied using transmittance spectra. The spectra shows a sharp fall in transmittance at wavelength corresponding to the band gap of the material. The optical band gap has been determined and found to be direct allowed. The band gap has been observed to strongly depend on film composition. The variation of band gap with composition has been observed to be quadratic in nature exhibiting a bowing behaviour. (author)

  9. Controlled Topological Transitions in Thin-Film Phase Separation

    KAUST Repository

    Hennessy, Matthew G.; Burlakov, Victor M.; Goriely, Alain; Wagner, Barbara; Mü nch, Andreas

    2015-01-01

    © 2015 Society for Industrial and Applied Mathematics. In this paper the evolution of a binary mixture in a thin-film geometry with a wall at the top and bottom is considered. By bringing the mixture into its miscibility gap so that no spinodal decomposition occurs in the bulk, a slight energetic bias of the walls toward each one of the constituents ensures the nucleation of thin boundary layers that grow until the constituents have moved into one of the two layers. These layers are separated by an interfacial region where the composition changes rapidly. Conditions that ensure the separation into two layers with a thin interfacial region are investigated based on a phase-field model. Using matched asymptotic expansions a corresponding sharp-interface problem for the location of the interface is established. It is then argued that this newly created two-layer system is not at its energetic minimum but destabilizes into a controlled self-replicating pattern of trapezoidal vertical stripes by minimizing the interfacial energy between the phases while conserving their area. A quantitative analysis of this mechanism is carried out via a thin-film model for the free interfaces, which is derived asymptotically from the sharp-interface model.

  10. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon

    2007-01-01

    In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge 2 Sb 2 Te 5 (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 μm. After the programming signals of more than 2x10 6 cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1x10 10 cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming

  11. Phase change memory

    CERN Document Server

    Qureshi, Moinuddin K

    2011-01-01

    As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t

  12. Phase contrast STEM for thin samples: Integrated differential phase contrast.

    Science.gov (United States)

    Lazić, Ivan; Bosch, Eric G T; Lazar, Sorin

    2016-01-01

    It has been known since the 1970s that the movement of the center of mass (COM) of a convergent beam electron diffraction (CBED) pattern is linearly related to the (projected) electrical field in the sample. We re-derive a contrast transfer function (CTF) for a scanning transmission electron microscopy (STEM) imaging technique based on this movement from the point of view of image formation and continue by performing a two-dimensional integration on the two images based on the two components of the COM movement. The resulting integrated COM (iCOM) STEM technique yields a scalar image that is linear in the phase shift caused by the sample and therefore also in the local (projected) electrostatic potential field of a thin sample. We confirm that the differential phase contrast (DPC) STEM technique using a segmented detector with 4 quadrants (4Q) yields a good approximation for the COM movement. Performing a two-dimensional integration, just as for the COM, we obtain an integrated DPC (iDPC) image which is approximately linear in the phase of the sample. Beside deriving the CTFs of iCOM and iDPC, we clearly point out the objects of the two corresponding imaging techniques, and highlight the differences to objects corresponding to COM-, DPC-, and (HA) ADF-STEM. The theory is validated with simulations and we present first experimental results of the iDPC-STEM technique showing its capability for imaging both light and heavy elements with atomic resolution and a good signal to noise ratio (SNR). Copyright © 2015 Elsevier B.V. All rights reserved.

  13. Thin Flexible IMM Solar Array, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Thin, flexible, and highly efficient solar arrays are needed that package compactly for launch and deploy into large, structurally stable high power generators....

  14. Thin Flexible IMM Solar Array, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Inverted Metamorphic (IMM) solar cells have achieved high efficiency at very low mass, but integration of the thin crystalline photovoltaic device into a flexible...

  15. Phase-change materials handbook

    Science.gov (United States)

    Hale, D. V.; Hoover, M. J.; Oneill, M. J.

    1972-01-01

    Handbook describes relationship between phase-change materials and more conventional thermal control techniques and discusses materials' space and terrestrial applications. Material properties of most promising phase-change materials and purposes and uses of metallic filler materials in phase-change material composites are provided.

  16. Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Guangfei [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Simian [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Huang, Huan [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Wang, Yang, E-mail: ywang@siom.ac.cn [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Lai, Tianshu, E-mail: stslts@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2013-09-01

    Direct comparison of the real-time in-situ crystallization behavior of as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (GeSbTe) and Ag{sub 8}In{sub 14}Sb{sub 55}Te{sub 23} (AgInSbTe) phase-change thin films driven by picosecond laser pulses was performed by a time-resolved optical pump-probe technique with nanosecond resolution. Different optical transients showed various crystallization processes because of the dissimilar nucleation- and growth-dominated mechanisms of the two materials. The effects of laser pulse fluence, thermal conductive structure, and successive pulse irradiation on their crystallization dynamics were also discussed. A schematic was then established to describe the different crystallization processes beginning from the as-deposited amorphous state. The results may provide further insight into the phase-change mechanism under extra-non-equilibrium conditions and aid the development of ultrafast phase-change memory materials.

  17. Phase contrast STEM for thin samples: Integrated differential phase contrast

    International Nuclear Information System (INIS)

    Lazić, Ivan; Bosch, Eric G.T.; Lazar, Sorin

    2016-01-01

    It has been known since the 1970s that the movement of the center of mass (COM) of a convergent beam electron diffraction (CBED) pattern is linearly related to the (projected) electrical field in the sample. We re-derive a contrast transfer function (CTF) for a scanning transmission electron microscopy (STEM) imaging technique based on this movement from the point of view of image formation and continue by performing a two-dimensional integration on the two images based on the two components of the COM movement. The resulting integrated COM (iCOM) STEM technique yields a scalar image that is linear in the phase shift caused by the sample and therefore also in the local (projected) electrostatic potential field of a thin sample. We confirm that the differential phase contrast (DPC) STEM technique using a segmented detector with 4 quadrants (4Q) yields a good approximation for the COM movement. Performing a two-dimensional integration, just as for the COM, we obtain an integrated DPC (iDPC) image which is approximately linear in the phase of the sample. Beside deriving the CTFs of iCOM and iDPC, we clearly point out the objects of the two corresponding imaging techniques, and highlight the differences to objects corresponding to COM-, DPC-, and (HA) ADF-STEM. The theory is validated with simulations and we present first experimental results of the iDPC-STEM technique showing its capability for imaging both light and heavy elements with atomic resolution and a good signal to noise ratio (SNR). - Highlights: • First DPC-based atomic resolution images of potential and charge density are obtained. • This is enabled by integration and differentiation of 2D DPC signals, respectively. • Integrated DPC (iDPC) based on 4 quadrant imaging is compared to iCOM imaging. • Noise analysis and comparison with standard STEM imaging modes is provided. • iDPC allows direct imaging of light (C, N, O …) and heavy (Ga, Au …) atoms together.

  18. Phase contrast STEM for thin samples: Integrated differential phase contrast

    Energy Technology Data Exchange (ETDEWEB)

    Lazić, Ivan, E-mail: ivan.lazic@fei.com; Bosch, Eric G.T.; Lazar, Sorin

    2016-01-15

    It has been known since the 1970s that the movement of the center of mass (COM) of a convergent beam electron diffraction (CBED) pattern is linearly related to the (projected) electrical field in the sample. We re-derive a contrast transfer function (CTF) for a scanning transmission electron microscopy (STEM) imaging technique based on this movement from the point of view of image formation and continue by performing a two-dimensional integration on the two images based on the two components of the COM movement. The resulting integrated COM (iCOM) STEM technique yields a scalar image that is linear in the phase shift caused by the sample and therefore also in the local (projected) electrostatic potential field of a thin sample. We confirm that the differential phase contrast (DPC) STEM technique using a segmented detector with 4 quadrants (4Q) yields a good approximation for the COM movement. Performing a two-dimensional integration, just as for the COM, we obtain an integrated DPC (iDPC) image which is approximately linear in the phase of the sample. Beside deriving the CTFs of iCOM and iDPC, we clearly point out the objects of the two corresponding imaging techniques, and highlight the differences to objects corresponding to COM-, DPC-, and (HA) ADF-STEM. The theory is validated with simulations and we present first experimental results of the iDPC-STEM technique showing its capability for imaging both light and heavy elements with atomic resolution and a good signal to noise ratio (SNR). - Highlights: • First DPC-based atomic resolution images of potential and charge density are obtained. • This is enabled by integration and differentiation of 2D DPC signals, respectively. • Integrated DPC (iDPC) based on 4 quadrant imaging is compared to iCOM imaging. • Noise analysis and comparison with standard STEM imaging modes is provided. • iDPC allows direct imaging of light (C, N, O …) and heavy (Ga, Au …) atoms together.

  19. Phase change materials handbook

    Science.gov (United States)

    Hale, D. V.; Hoover, M. J.; Oneill, M. J.

    1971-01-01

    This handbook is intended to provide theory and data needed by the thermal design engineer to bridge the gap between research achievements and actual flight systems, within the limits of the current state of the art of phase change materials (PCM) technology. The relationship between PCM and more conventional thermal control techniques is described and numerous space and terrestrial applications of PCM are discussed. Material properties of the most promising PCMs are provided; the purposes and use of metallic filler materials in PCM composites are presented; and material compatibility considerations relevant to PCM design are included. The engineering considerations of PCM design are described, especially those pertaining to the thermodynamic and heat transfer phenomena peculiar to PCM design. Methods of obtaining data not currently available are presented. The special problems encountered in the space environment are described. Computational tools useful to the designer are discussed. In summary, each aspect of the PCM problem important to the design engineer is covered to the extent allowed by the scope of this effort and the state of the art.

  20. Polarity-dependent resistance switching in GeSbTe phase-change thin films : The importance of excess Sb in filament formation

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Oosthoek, Jasper L. M.; van den Dool, Pim; Palasantzas, George; Pauza, Andrew

    2009-01-01

    We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switching in Ge(2)Sb(2+x)Te(5) films is reversible with

  1. Multiphase flows with phase change

    Indian Academy of Sciences (India)

    Multiphase flows with phase change are ubiquitous in many industrial sectors ranging from energy and infra-structure to specialty chemicals and pharmaceuticals. My own interest in mul- tiphase flows with phase change started more than 15 years ago when I had initiated work on riser reactor for fluid catalytic cracking and ...

  2. Nanoscale phase change memory materials.

    Science.gov (United States)

    Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

    2012-08-07

    Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

  3. A reversed-phase compatible thin-layer chromatography autography for the detection of acetylcholinesterase inhibitors.

    Science.gov (United States)

    Ramallo, I Ayelen; García, Paula; Furlan, Ricardo L E

    2015-11-01

    A dual readout autographic assay to detect acetylcholinesterase inhibitors present in complex matrices adsorbed on reversed-phase or normal-phase thin-layer chromatography plates is described. Enzyme gel entrapment with an amphiphilic copolymer was used for assay development. The effects of substrate and enzyme concentrations, pH, incubation time, and incubation temperature on the sensitivity and the detection limit of the assay were evaluated. Experimental design and response surface methodology were used to optimize conditions with a minimum number of experiments. The assay allowed the detection of 0.01% w/w of physostigmine in both a spiked Sonchus oleraceus L. extract chromatographed on normal phase and a spiked Pimenta racemosa (Mill.) J.W. Moore leaf essential oil chromatographed on reversed phase. Finally, the reversed-phase thin-layer chromatography assay was applied to reveal the presence of an inhibitor in the Cymbopogon citratus (DC.) Stapf essential oil. The developed assay is able to detect acetylcholinesterase inhibitors present in complex matrixes that were chromatographed in normal phase or reversed-phase thin-layer chromatography. The detection limit for physostigmine on both normal and reversed phase was of 1×10(-4) μg. The results can be read by a change in color and/or a change in fluorescence. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Perovskite phase thin films and method of making

    Science.gov (United States)

    Boyle, Timothy J.; Rodriguez, Mark A.

    2000-01-01

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  5. Monte Carlo simulations of the phase separation of a copolymer blend in a thin film

    KAUST Repository

    Wang, Zhexiao

    2014-12-11

    Monte Carlo simulations were carried out to study the phase separation of a copolymer blend comprising an alternating copolymer and/or block copolymer in a thin film, and a phase diagram was constructed with a series of composed recipes. The effects of composition and segregation strength on phase separation were discussed in detail. The chain conformation of the block copolymer and alternating copolymer were investigated with changes of the segregation strength. Our simulations revealed that the segment distribution along the copolymer chain and the segregation strength between coarse-grained beads are two important parameters controlling phase separation and chain conformation in thin films of a copolymer blend. A well-controlled phase separation in the copolymer blend can be used to fabricate novel nanostructures.

  6. Strain-induced alignment and phase behavior of blue phase liquid crystals confined to thin films.

    Science.gov (United States)

    Bukusoglu, Emre; Martinez-Gonzalez, Jose A; Wang, Xiaoguang; Zhou, Ye; de Pablo, Juan J; Abbott, Nicholas L

    2017-12-06

    We report on the influence of surface confinement on the phase behavior and strain-induced alignment of thin films of blue phase liquid crystals (BPs). Confining surfaces comprised of bare glass, dimethyloctadecyl [3-(trimethoxysilyl)propyl] ammonium chloride (DMOAP)-functionalized glass, or polyvinyl alcohol (PVA)-coated glass were used with or without mechanically rubbing to influence the azimuthal anchoring of the BPs. These experiments reveal that confinement can change the phase behavior of the BP films. For example, in experiments performed with rubbed-PVA surfaces, we measured the elastic strain of the BPs to change the isotropic-BPII phase boundary, suppressing formation of BPII for film thicknesses incommensurate with the BPII lattice. In addition, we observed strain-induced alignment of the BPs to exhibit a complex dependence on both the surface chemistry and azimuthal alignment of the BPs. For example, when using bare glass surfaces causing azimuthally degenerate and planar anchoring, BPI oriented with (110) planes of the unit cell parallel to the contacting surfaces for thicknesses below 3 μm but transitioned to an orientation with (200) planes aligned parallel to the contacting surfaces for thicknesses above 4 μm. In contrast, BPI aligned with (110) planes parallel to confining surfaces for all other thicknesses and surface treatments, including bare glass with uniform azimuthal alignment. Complementary simulations based on minimization of the total free energy (Landau-de Gennes formalism) confirmed a thickness-dependent reorientation due to strain of BPI unit cells within a window of surface anchoring energies and in the absence of uniform azimuthal alignment. In contrast to BPI, BPII did not exhibit thickness-dependent orientations but did exhibit orientations that were dependent on the surface chemistry, a result that was also captured in simulations by varying the anchoring energies. Overall, the results in this paper reveal that the orientations

  7. Modeling of metastable phase formation diagrams for sputtered thin films.

    Science.gov (United States)

    Chang, Keke; Music, Denis; To Baben, Moritz; Lange, Dennis; Bolvardi, Hamid; Schneider, Jochen M

    2016-01-01

    A method to model the metastable phase formation in the Cu-W system based on the critical surface diffusion distance has been developed. The driver for the formation of a second phase is the critical diffusion distance which is dependent on the solubility of W in Cu and on the solubility of Cu in W. Based on comparative theoretical and experimental data, we can describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation. Metastable phase formation diagrams for Cu-W and Cu-V thin films are predicted and validated by combinatorial magnetron sputtering experiments. The correlative experimental and theoretical research strategy adopted here enables us to efficiently describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation during magnetron sputtering.

  8. Quenching of superconductivity in disordered thin films by phase fluctuations

    International Nuclear Information System (INIS)

    Hebard, A.F.; Palaanen, M.A.

    1992-01-01

    The amplitude Ψ 0 and phase Φ of the superconducting order parameter in thin-film systems are affected differently by disorder and dimensionality. With increasing disorder superconducting long range order is quenched in sufficiently thin films by physical processes driven by phase fluctuations. This occurs at both the zero-field vortex-antivortex unbinding transition and at the zero-temperature magnetic-field-tuned superconducting-insulating transition. At both of these transitions Ψ 0 is finite and constant, vanishing only when temperature, disorder, and/or magnetic field are increased further. Experimental results on amorphous-composite InO x films are presented to illustrate these points and appropriate comparisons are made to other experimental systems. (orig.)

  9. Modelling of imploding phase of thin-film liners

    International Nuclear Information System (INIS)

    Savic, P.; Gupta, R.P.; Kekez, M.M.; Lau, J.H.; Lougheed, G.D.

    1983-01-01

    Theoretical models for thin-film implosions in vacuum are proposed for theta and Z-geometries in this paper, in order to develop a high-energy XUV source. In the present study, attention is confined to the implosion phase. The authors consider the plasma to be perfectly conducting and to have a frozen magnetic field resulting in a modified magnatoacoustic wave speed. An attempt is made to find to what extend the present treatment differs from detailed numerical analysis

  10. Direct observation of phase transition of GeSbTe thin films by Atomic Force Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Yang Fei [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang Rui; Geng Lei; Tong Liang; Xu Jun [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Su Weining; Yu Yao [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Ma Zhongyuan; Chen Kunji [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2012-10-01

    Graphical abstract: Nano-sized marks on GST thin film were fabricated using Conductive-AFM (Atomic Force Microscope). The AFM morphology images show that the marks are ablated at the center and a raised ring surrounding it. Highlights: Black-Right-Pointing-Pointer Microstructure of GeSbTe thin films was characterized by XRD and AFM. Black-Right-Pointing-Pointer Annealing and applying electrical field can induce crystallization on thin film. Black-Right-Pointing-Pointer Conductive-AFM was used to modify the surface of GeSbTe thin film. - Abstract: GeSbTe (GST) thin films were deposited on quartz substrates using electron beam evaporation system and then annealed in nitrogen atmosphere at different temperatures, ranging from 20 Degree-Sign C to 300 Degree-Sign C. X-ray diffraction (XRD) and Atomic Force microscope (AFM) measurements were used to characterize the as-deposited and post-annealed thin films. Annealing treatment was found to induce changes on microstructure, surface roughness and grain size, indicating that with the increase of annealing temperature, the amorphous GST films first changed to face-centered-cubic (fcc) phase and then the stable hexagonal (hex) phase. Meanwhile, conductive-AFM (C-AFM) was used to produce crystallized GST dots on thin films. I-V spectroscopy results show that GST films can switch from amorphous state to crystalline state at threshold voltage. After switching, I-V curve exhibits ohmic characteristic, which is usually observed in crystallized GST films. By applying repeated I-V spectroscopies on the thin films, crystallized nuclei were observed. As the times of I-V spectroscopies increases, the area of written dots increases, and the center of the mark begin to ablate. The AFM images show that the shape of marks is an ablated center with a raised ring surrounding it.

  11. Influence of lattice distortion on phase transition properties of polycrystalline VO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tiegui [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Langping, E-mail: aplpwang@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Xiaofeng; Zhang, Yufen [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Yu, Yonghao, E-mail: yhyu@hit.edu.cn [Academy of Fundamental and Interdisciplinary Science, Harbin Institute of Technology, Harbin 150001 (China)

    2016-08-30

    Highlights: • Polycrystalline VO{sub 2} thin films were fabricated by high power impulse magnetron sputtering. • The reported lowest phase transition temperature for undoped polycrystalline VO{sub 2} thin film was reduced to 32 °C by this research. • XRD patterns at varied temperatures revealed that the main structual change was a gradual shift in interplanar spacing with temperature. - Abstract: In this work, high power impulse magnetron sputtering was used to control the lattice distortion in polycrystalline VO{sub 2} thin film. SEM images revealed that all the VO{sub 2} thin films had crystallite sizes of below 20 nm, and similar configurations. UV–vis-near IR transmittance spectra measured at different temperatures showed that most of the as-deposited films had a typical metal–insulator transition. Four-point probe resistivity results showed that the transition temperature of the films varied from 54.5 to 32 °C. The X-ray diffraction (XRD) patterns of the as-deposited films revealed that most were polycrystalline monoclinic VO{sub 2}. The XRD results also confirmed that the lattice distortions in the as-deposited films were different, and the transition temperature decreased with the difference between the interplanar spacing of the as-deposited thin film and standard rutile VO{sub 2}. Furthermore, a room temperature rutile VO{sub 2} thin film was successfully synthesized when this difference was small enough. Additionally, XRD patterns measured at varied temperatures revealed that the phase transition process of the polycrystalline VO{sub 2} thin film was a coordinative deformation between grains with different orientations. The main structural change during the phase transition was a gradual shift in interplanar spacing with temperature.

  12. Crystal structure and phase composition of aluminium thin films with holmium additions

    International Nuclear Information System (INIS)

    Koleshko, V.M.; Belitskij, V.F.; Obukhov, V.E.; Rumak, N.V.; Urban, T.P.

    1984-01-01

    The effect of holmium additions on the crystal structure and phase composition of thin aluminium films has been studied. A regularity in grain size changes in aluminium thin films versus the holmium content in them is established. The holmium introduction is shown to result in the appearance of axial texture in the aluminium films, the texture axis being determined by the quantity of the addition. During heat treatment of the aluminium films, containing holmium additions, in the range of low ( approximately 100-200 deg C) annealing temperatures holmium monohydroxide is formed, and at annealing temperatures 300 deg C 0 3 is formed

  13. Phase coexistence in the metal-insulator transition of a VO2 thin film

    International Nuclear Information System (INIS)

    Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

    2005-01-01

    Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

  14. Solid phase crystallisation of HfO2 thin films

    International Nuclear Information System (INIS)

    Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

    2005-01-01

    In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

  15. Phase diagrams of site diluted ferromagnetic thin film

    International Nuclear Information System (INIS)

    Hamedoun, M.; Bouslykhane, K.; Bakrim, H.; Hourmatallah, A.; Benzakour, N.; Masrour, R.

    2006-01-01

    The phase transition properties of Ising, classical XY and Heisenberg of diluted ferromagnetic thin film are studied by the method of exact high-temperature series expansions extrapolated with the Pade approximants method. The reduced critical temperature τ c of the diluted ferromagnetic thin films is studied as a function of film thickness L and the exchange interactions in the bulk J b , in the surface J s and between surface and nearest-neighbour layer J - bar . It is found that τ c increases with the exchange interactions of surface and L. The magnetic phase diagram (τ c versus dilution x) is obtained. A critical value of the surface exchange interaction above which the surface magnetism appears is obtained. The dependence of the critical parameter of surface reduced coupling R 2 c as a function of the dilution x and the ratio of the exchange interaction between the surface and nearest-neighbour layer to the bulk one R 1 for the three studied models has been investigated. The percolation threshold is defined as the concentration x p at which τ c =0. The obtained values are x p ∼0.2 in the bulk and x p ∼0.4 at the surface

  16. Sprayable Phase Change Coating Thermal Protection Material

    Science.gov (United States)

    Richardson, Rod W.; Hayes, Paul W.; Kaul, Raj

    2005-01-01

    NASA has expressed a need for reusable, environmentally friendly, phase change coating that is capable of withstanding the heat loads that have historically required an ablative thermal insulation. The Space Shuttle Program currently relies on ablative materials for thermal protection. The problem with an ablative insulation is that, by design, the material ablates away, in fulfilling its function of cooling the underlying substrate, thus preventing the insulation from being reused from flight to flight. The present generation of environmentally friendly, sprayable, ablative thermal insulation (MCC-l); currently use on the Space Shuttle SRBs, is very close to being a reusable insulation system. In actual flight conditions, as confirmed by the post-flight inspections of the SRBs, very little of the material ablates. Multi-flight thermal insulation use has not been qualified for the Space Shuttle. The gap that would have to be overcome in order to implement a reusable Phase Change Coating (PCC) is not unmanageable. PCC could be applied robotically with a spray process utilizing phase change material as filler to yield material of even higher strength and reliability as compared to MCC-1. The PCC filled coatings have also demonstrated potential as cryogenic thermal coatings. In experimental thermal tests, a thin application of PCC has provided the same thermal protection as a much thicker and heavier application of a traditional ablative thermal insulation. In addition, tests have shown that the structural integrity of the coating has been maintained and phase change performance after several aero-thermal cycles was not affected. Experimental tests have also shown that, unlike traditional ablative thermal insulations, PCC would not require an environmental seal coat, which has historically been required to prevent moisture absorption by the thermal insulation, prevent environmental degradation, and to improve the optical and aerodynamic properties. In order to reduce

  17. Electric field tuning of phase separation in manganite thin films

    KAUST Repository

    Lourembam, James; Wu, Jianchun; Ding, Junfeng; Lin, Weinan; Wu, Tao

    2014-01-01

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  18. Colossal magnetoresistance and phase separation in manganite thin films

    Science.gov (United States)

    Srivastava, M. K.; Agarwal, V.; Kaur, A.; Singh, H. K.

    2017-05-01

    In the present work, polycrystalline Sm0.55Sr0.45MnO3 thin films were prepared on LSAT (001) single crystal substrates by ultrasonic nebulized spray pyrolysis technique. The X-ray diffraction θ-2θ scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. The impact of oxygen vacancy results into (i) higher value of paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature, i.e., TC/TIM, (ii) sharper PMI-FMM transition, (iii) higher value of magnetization and magnetic saturation moment, and (iv) higher value of magnetoresistance (˜99%). We suggest here that oxygen vacancy favors FMM phase while oxygen vacancy annihilation leads to antiferromagnetic-charge ordered insulator (AFM-COI) phase. The observed results have been explained in context of phase separation (PS) caused by different fractions of the competing FMM and AFM-COI phases.

  19. Electric field tuning of phase separation in manganite thin films

    KAUST Repository

    Lourembam, James

    2014-01-29

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  20. Active terahertz metamaterials based on the phase transition of VO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H., E-mail: heungsoo.kim@nrl.navy.mil [Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States); Charipar, N. [Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States); Breckenfeld, E. [National Research Council Fellow at the Naval Research Laboratory, Washington, DC 20375 (United States); Rosenberg, A. [NOVA Research, Inc., Alexandria, VA 22308 (United States); Piqué, A. [Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

    2015-12-01

    Vanadium dioxide (VO{sub 2}) thin films were prepared on single crystal sapphire substrates by pulsed laser deposition. VO{sub 2} films exhibited a significant resistivity drop (> 10{sup 4} Ω-cm) and large optical transmittance change (> 60%) in the near-infrared region across their semiconductor-to-metal transition. Hybrid metamaterial devices designed for the THz frequency regime were fabricated by combining double split-ring resonators (SRRs) with phase changing VO{sub 2} films. By changing the conductivity of VO{sub 2} via temperature, the behavior of the SRR gap was adjusted from capacitive to resistive in order to modulate the THz beam transmission at their resonance frequencies. A modulation efficiency greater than 50% was achieved at the magnetic resonance frequencies (0.3 THz and 0.7 THz) in these hybrid SRR–VO{sub 2} metamaterial devices. - Highlights: • Pulsed laser deposition of phase changing VO{sub 2} thin films • Hybrid metamaterial devices composed of split-ring resonators and phase changing VO{sub 2} • Tunable THz transmission with a modulation efficiency over 50%.

  1. Thermodynamic phase profiles of optically thin midlatitude cloud and their relation to temperature

    Energy Technology Data Exchange (ETDEWEB)

    Naud, C. M.; Del Genio, Anthony D.; Haeffelin, M.; Morille, Y.; Noel, V.; Dupont, Jean-Charles; Turner, David D.; Lo, Chaomei; Comstock, Jennifer M.

    2010-06-03

    Winter cloud phase and temperature profiles derived from ground-based lidar depolarization and radiosonde measurements are analyzed for two midlatitude locations: the United States Atmospheric Radiation Measurement Program Southern Great Plains (SGP) site and the Site Instrumental de Recherche par Télédétection Atmosphérique (SIRTA) in France. Because lidars are attenuated in optically thick clouds, the dataset only includes optically thin clouds (optical thickness < 3). At SGP, 57% of the clouds observed with the lidar in the temperature range 233-273 K are either completely liquid or completely glaciated, while at SIRTA only 42% of the observed clouds are single phase, based on a depolarization ratio threshold of 11% for differentiating liquid from ice. Most optically thin mixed phase clouds show an ice layer at cloud top, and clouds with liquid at cloud top are less frequent. The relationship between ice phase occurrence and temperature only slightly changes between cloud base and top. At both sites liquid is more prevalent at colder temperatures than has been found previously in aircraft flights through frontal clouds of greater optical thicknesses. Liquid in clouds persists to colder temperatures at SGP than SIRTA. This information on the average temperatures of mixed phase clouds at both locations complements earlier passive satellite remote sensing measurements that sample cloud phase near cloud top and for a wider range of cloud optical thicknesses.

  2. Nanoscale phase-change materials and devices

    International Nuclear Information System (INIS)

    Zheng, Qinghui; Wang, Yuxi; Zhu, Jia

    2017-01-01

    Phase-change materials (PCMs) that can reversibly transit between crystalline and amorphous phases have been widely used for data-storage and other functional devices. As PCMs scale down to nanoscale, the properties and transition procedures can vary, bringing both challenges and opportunities in scalability. This article describes the physical structures, properties and applications of nanoscale phase-change materials and devices. The limitations and performance of scaling properties in phase-change materials and the recent progress and challenges in phase-change devices are presented. At the end, some emerging applications related to phase-change materials are also introduced. (topical review)

  3. Nanoscale phase-change materials and devices

    Science.gov (United States)

    Zheng, Qinghui; Wang, Yuxi; Zhu, Jia

    2017-06-01

    Phase-change materials (PCMs) that can reversibly transit between crystalline and amorphous phases have been widely used for data-storage and other functional devices. As PCMs scale down to nanoscale, the properties and transition procedures can vary, bringing both challenges and opportunities in scalability. This article describes the physical structures, properties and applications of nanoscale phase-change materials and devices. The limitations and performance of scaling properties in phase-change materials and the recent progress and challenges in phase-change devices are presented. At the end, some emerging applications related to phase-change materials are also introduced.

  4. Electrical transport in crystalline phase change materials

    International Nuclear Information System (INIS)

    Woda, Michael

    2012-01-01

    In this thesis, the electrical transport properties of crystalline phase change materials are discussed. Phase change materials (PCM) are a special class of semiconducting and metallic thin film alloys, typically with a high amount of the group five element antimony or the group six element tellurium, such as Ge 2 Sb 2 Te 5 . The unique property portfolio of this material class makes it suitable for memory applications. PCMs reveal fast switching between two stable room-temperature phases (amorphous and crystalline) realized by optical laser or electrical current pulses in memory devices. Additionally, a pronounced property contrast in form of optical reflectivity and electrical conductivity between the amorphous and crystalline phase is the characteristic fingerprint of PCMs. The emerging electrical solid state memory PCRAM is a very promising candidate to replace Flash memory in the near future or to even become a universal memory, which is non-volatile and shows the speed and cyclability of DRAM. One of the main technological challenges is the switching process into the amorphous state, which is the most power demanding step. In order to reduce the switching power, the crystalline resistivity needs to be increased at a given voltage. Thus understanding and tayloring of this property is mandatory. In this work, first the technological relevance, i.e. optical and electrical memory concepts based on PCMs are introduced. Subsequently a description of the physical properties of PCMs in four categories is given. Namely, structure, kinetics, optical properties and electrical properties are discussed. Then important recent developments such as the identification of resonant bonding in crystalline PCMs and a property predicting coordination scheme are briefly reviewed. The following chapter deals with the theoretical background of electrical transport, while the next chapter introduces the experimental techniques: Sputtering, XRR, XRD, DSC, thermal annealing

  5. Electrical transport in crystalline phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Woda, Michael

    2012-01-06

    In this thesis, the electrical transport properties of crystalline phase change materials are discussed. Phase change materials (PCM) are a special class of semiconducting and metallic thin film alloys, typically with a high amount of the group five element antimony or the group six element tellurium, such as Ge{sub 2}Sb{sub 2}Te{sub 5}. The unique property portfolio of this material class makes it suitable for memory applications. PCMs reveal fast switching between two stable room-temperature phases (amorphous and crystalline) realized by optical laser or electrical current pulses in memory devices. Additionally, a pronounced property contrast in form of optical reflectivity and electrical conductivity between the amorphous and crystalline phase is the characteristic fingerprint of PCMs. The emerging electrical solid state memory PCRAM is a very promising candidate to replace Flash memory in the near future or to even become a universal memory, which is non-volatile and shows the speed and cyclability of DRAM. One of the main technological challenges is the switching process into the amorphous state, which is the most power demanding step. In order to reduce the switching power, the crystalline resistivity needs to be increased at a given voltage. Thus understanding and tayloring of this property is mandatory. In this work, first the technological relevance, i.e. optical and electrical memory concepts based on PCMs are introduced. Subsequently a description of the physical properties of PCMs in four categories is given. Namely, structure, kinetics, optical properties and electrical properties are discussed. Then important recent developments such as the identification of resonant bonding in crystalline PCMs and a property predicting coordination scheme are briefly reviewed. The following chapter deals with the theoretical background of electrical transport, while the next chapter introduces the experimental techniques: Sputtering, XRR, XRD, DSC, thermal annealing

  6. Ion transport and phase transformation in thin film intercalation electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wunde, Fabian; Nowak, Susann; Muerter, Juliane; Hadjixenophontos, Efi; Berkemeier, Frank; Schmitz, Guido [Stuttgart Univ. (Germany). Inst. fuer Materialwissenschaft

    2017-11-15

    Thin film battery electrodes of the olivine structure LiFePO{sub 4} and the spinel phase LiMn{sub 2}O{sub 4} are deposited through ion-beam sputtering. The intercalation kinetics is studied by cyclo-voltammetry using variation of the cycling rate over 4 to 5 orders of magnitude. The well-defined layer geometry allows a detailed quantitative analysis. It is shown that LiFePO{sub 4} clearly undergoes phase separation during intercalation, although the material is nano-confined and very high charging rates are applied. We present a modified Randles-Sevcik evaluation adapted to phase-separating systems. Both the charging current and the overpotential depend on the film thickness in a systematic way. The analysis yields evidence that the grain boundaries are important short circuit paths for fast transport. They increase the electrochemical active area with increasing layer thickness. Evidence is obtained that the grain boundaries in LiFePO{sub 4} have the character of an ion-conductor of vanishing electronic conductivity.

  7. Polymers in phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, M.C.; Brites, M.J.; Alexandre, J.H. [National Lab. for Energy and Geology, Lisbon (Portugal)

    2010-07-01

    Phase Change Materials (PCMs) which are the core of latent heat thermal energy storage systems are currently an area of investigation of increasing interest. Several substances differing in physical and chemical characteristics as well as in thermal behavior have been studied as PCMS{sup 1-3}. In order to meet the requisites of particular systems, auxiliary materials are often used with specific functions. This bibliographic survey shows that polymeric materials have been proposed either as the PCM itself in solid-liquid or solid-solid transitions or to perform auxiliary functions of shape stabilisation and microencapsulation for solid-liquid PCMs. The PCMs have an operating temperature ranging from around 0 C (for the system water/polyacrilamid) to around 127 C (for crosslinked HDPE). (orig.)

  8. Phase transition of TiO{sub 2} thin films detected by the pulsed laser photoacoustic technique

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Pacheco, A.; Castaneda-Guzman, R.; Oliva Montes de Oca, C.; Esparza-Garcia, A. [Universidad Nacional Autonoma de Mexico, CCADET-UNAM, Laboratorio de Fotofisica y Peliculas Delgadas, Cd. Universitaria, A.P. 70-186, Mexico D.F. (Mexico); Perez Ruiz, S.J. [CCADET-UNAM, Acustica y Vibraciones, Mexico D.F. (Mexico)

    2011-03-15

    In this work, we present characterization of titanium oxide thin films by photoacoustic measurements to determine the ablation threshold and phase transitions from amorphous to crystalline states. The important advantages of this method are that it does not require amplification at the detection stage and that it is a non-destructive technique. The correlation analysis of the photoacoustic signals allows us to visualize the ablation threshold and the phase transitions with enhanced sensitivity. This correlation analysis clearly exhibits the changes in the thin-film morphology due to controlled variations of the fluence (energy/area) and the temperature of the surrounding medium. This is particularly important for those cases where the crystalline changes caused by temperature variations need to be monitored. The thin-film samples were prepared by the sputtering technique at room temperature in the amorphous state. The phase transformations were induced by controlled temperature scanning and then corroborated with Raman spectroscopy measurements. (orig.)

  9. Analysis of writing and erasing behaviours in phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Hyot, B. E-mail: bhyot@cea.fr; Poupinet, L.; Gehanno, V.; Desre, P.J

    2002-09-01

    An understanding of the process involved in writing and erasing of phase-change optical recording media is vital to the development of new, and the improvement of existing, products. The present work investigates both experimental and theoretical laser-induced fast structural transformations of GeSbTe thin films. Optical and microstructural changes are correlated using both a static tester and transmission electron microscopy. In the second part of this paper we try to elucidate the physics underlying the amorphous-to-crystalline phase transformation under short-pulse laser excitation. Both thermal and thermodynamical behaviours must be taken into account to illustrate real processes.

  10. Analysis of writing and erasing behaviours in phase change materials

    International Nuclear Information System (INIS)

    Hyot, B.; Poupinet, L.; Gehanno, V.; Desre, P.J.

    2002-01-01

    An understanding of the process involved in writing and erasing of phase-change optical recording media is vital to the development of new, and the improvement of existing, products. The present work investigates both experimental and theoretical laser-induced fast structural transformations of GeSbTe thin films. Optical and microstructural changes are correlated using both a static tester and transmission electron microscopy. In the second part of this paper we try to elucidate the physics underlying the amorphous-to-crystalline phase transformation under short-pulse laser excitation. Both thermal and thermodynamical behaviours must be taken into account to illustrate real processes

  11. Stochastic modelling of two-phase flows including phase change

    International Nuclear Information System (INIS)

    Hurisse, O.; Minier, J.P.

    2011-01-01

    Stochastic modelling has already been developed and applied for single-phase flows and incompressible two-phase flows. In this article, we propose an extension of this modelling approach to two-phase flows including phase change (e.g. for steam-water flows). Two aspects are emphasised: a stochastic model accounting for phase transition and a modelling constraint which arises from volume conservation. To illustrate the whole approach, some remarks are eventually proposed for two-fluid models. (authors)

  12. Light-induced ultrafast phase transitions in VO2 thin film

    International Nuclear Information System (INIS)

    Lysenko, S.; Rua, A.J.; Vikhnin, V.; Jimenez, J.; Fernandez, F.; Liu, H.

    2006-01-01

    Vanadium dioxide shows a passive and reversible change from a monoclinic insulator phase to a metallic tetragonal rutile structure when the sample temperature is close to and over 68 deg. C. As a kind of functional material, VO 2 thin films deposited on fused quartz substrates were successfully prepared by the pulsed laser deposition (PLD) technique. With laser illumination at 400 nm on the obtained films, the phase transition (PT) occurred. The observed light-induced PT was as fast as the laser pulse duration of 100 fs. Using a femtosecond laser system, the relaxation processes in VO 2 were studied by optical pump-probe spectroscopy. Upon a laser excitation an instantaneous response in the transient reflectivity and transmission was observed followed by a relatively longer relaxation process. The alteration is dependent on pump power. The change in reflectance reached a maximum value at a pump pulse energy between 7 and 14 mJ/cm 2 . The observed PT is associated with the optical interband transition in VO 2 thin film. It suggests that with a pump laser illuminating on the film, excitation from the d θ,ε - state of valence band to the unoccupied excited mixed d θ,ε -π* - state of the conduction band in the insulator phase occurs, followed by a resonant transition to an unoccupied excited mixed d θ,ε -π* - state of the metallic phase band

  13. Investigations of environmental induced effects on AlQ3 thin films by AFM phase imaging

    International Nuclear Information System (INIS)

    Shukla, Vivek Kumar; Kumar, Satyendra

    2007-01-01

    Tris(8-hydroxyquinoline) metal complex (AlQ 3 ) is a widely used light-emitting material in organic light emitting devices (OLEDs). The environmental stability is still a major problem with OLEDs and needs further improvement. In this report, an additional feature of Atomic Force Microscopy (AFM) was exploited with the aim to understand the environmental induced effects and physical phenomenon involved on AlQ 3 thin films. We have used phase imaging to identify the presence of other aggregation phases formed after annealing the thin film in different ambient and after white light exposure. An enhanced photoluminescence intensity is observed for the samples annealed in oxygen near 100 deg. C. The enhanced photoluminescence is understood in terms of formation of a new aggregation phase. The phase change and the fraction of new phase is estimated by phase images taken by atomic force microscopy (AFM). Light induced effects on AlQ 3 films exposed to white light in air and vacuum are characterized by atomic force microscopy (AFM) for surface morphology and phases present. The AFM images indicate enhanced crystallinity for the vacuum exposed samples. The phase with increased lifetime and hence enhanced crystallinity for vacuum exposed films has also been found by time correlated single photon counting (TCSPC) measurements. To the best of our knowledge, this study is applied for the first time on this material with the combination of topography and phase imaging in atomic force microscopy (AFM). The major aim was to take advantage of the additional feature of AFM-mode over the conventionally used

  14. Characterisation of thin films by phase modulated spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Bhattacharyya, D.; Das, N.C.

    1998-07-01

    A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (χ 2 ) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done on (i) ion-implanted Si-wafers to investigate the formation of SiC layers, (ii) phenyl- silane coating on glass to investigate the surface modifications achieved for better adsorption of rhodamine dye on glass, (iii) GaN films on quartz to investigate the formation of high quality GaN layers by sputtering of GaAs targets, (iv) Diamond-like-coating (DLC) samples prepared by Chemical Vapour Deposition (CVD) to investigate the optical properties which would ultimately lead to an accurate estimation of the ratio of sp 3 and sp 2 bonded carbon atoms in the films and (v) SS 304 under different surface treatments to investigate the growth of different passive films. (author)

  15. Topological phases of topological-insulator thin films

    Science.gov (United States)

    Asmar, Mahmoud M.; Sheehy, Daniel E.; Vekhter, Ilya

    2018-02-01

    We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as a function of both the film thickness and the momentum in the plane of the film for Bi2Se3 and Bi2Te3 . As a result, while the magnitude of the matrix element at the center of the surface Brillouin zone gives the gap in the energy spectrum, the sign of the matrix element uniquely determines the topological properties of the film, as demonstrated by explicitly computing the pseudospin textures and the Chern number. We find a sequence of transitions between topological and nontopological phases, separated by semimetallic states, as the film thickness varies. In the topological phase, the edge states of the film always exist but only carry a spin current if the edge potentials break particle-hole symmetry. The edge states decay very slowly away from the boundary in Bi2Se3 , making Bi2Te3 , where this scale is shorter, a more promising candidate for the observation of these states. Our results hold for free-standing films as well as heterostructures with large-gap insulators.

  16. Phase stability of AlYB14 sputtered thin films

    International Nuclear Information System (INIS)

    Koelpin, Helmut; Music, Denis; Emmerlich, Jens; Schneider, Jochen M; Henkelman, Graeme; Munnik, Frans

    2009-01-01

    AlYB 14 (Imma) thin films were synthesized by magnetron sputtering. On the basis of x-ray diffraction, no phases other than crystalline AlYB 14 could be identified. According to electron probe microanalysis, energy dispersive x-ray analysis and elastic recoil detection analysis, the Al and Y occupancies vary in the range of 0.73-1.0 and 0.29-0.45, respectively. Density functional theory based calculations were carried out to investigate the effect of occupancy on the stability of Al x Y y B 14 (x,y = 0.25, 0.5, 0.75, 1). The mean effective charge per icosahedron and the bulk moduli were also calculated. It is shown that the most stable configuration is Al 0.5 YB 14 , corresponding to a charge transfer of two electrons from the metal atoms to the boron icosahedra. Furthermore, it is found that the stability of a configuration is increased as the charge is homogeneously distributed within the icosahedra. The bulk moduli for all configurations investigated are in the range between 196 and 220 GPa, rather close to those for known hard phases such as α- Al 2 O 3 .

  17. Reconfigurable Braille display with phase change locking

    Science.gov (United States)

    Soule, Cody W.; Lazarus, Nathan

    2016-07-01

    Automatically updated signs and displays for sighted people are common in today’s world. However, there is no cheap, low power equivalent available for the blind. This work demonstrates a reconfigurable Braille cell using the solid-to-liquid phase change of a low melting point alloy as a zero holding power locking mechanism. The device is actuated with the alloy in the liquid state, and is then allowed to solidify to lock the Braille dot in the actuated position. A low-cost manufacturing process is developed that includes molding of a rigid silicone to create pneumatic channels, and bonding of a thin membrane of a softer silicone on the surface for actuation. A plug of Field’s metal (melting point 62 °C) is placed in the pneumatic channels below each Braille dot to create the final device. The device is well suited for low duty cycle operation in applications such as signs, and is able to maintain its state indefinitely without additional power input. The display requires a pneumatic pressure of only 24 kPa for actuation, and reconfiguration has been demonstrated in less than a minute and a half.

  18. Material Engineering for Phase Change Memory

    Science.gov (United States)

    Cabrera, David M.

    As semiconductor devices continue to scale downward, and portable consumer electronics become more prevalent there is a need to develop memory technology that will scale with devices and use less energy, while maintaining performance. One of the leading prototypical memories that is being investigated is phase change memory. Phase change memory (PCM) is a non-volatile memory composed of 1 transistor and 1 resistor. The resistive structure includes a memory material alloy which can change between amorphous and crystalline states repeatedly using current/voltage pulses of different lengths and magnitudes. The most widely studied PCM materials are chalcogenides - Germanium-Antimony-Tellerium (GST) with Ge2Sb2Te3 and Germanium-Tellerium (GeTe) being some of the most popular stochiometries. As these cells are scaled downward, the current/voltage needed to switch these materials becomes comparable to the voltage needed to sense the cell's state. The International Roadmap for Semiconductors aims to raise the threshold field of these devices from 66.6 V/mum to be at least 375 V/mum for the year 2024. These cells are also prone to resistance drift between states, leading to bit corruption and memory loss. Phase change material properties are known to influence PCM device performance such as crystallization temperature having an effect on data retention and litetime, while resistivity values in the amorphous and crystalline phases have an effect on the current/voltage needed to write/erase the cell. Addition of dopants is also known to modify the phase change material parameters. The materials G2S2T5, GeTe, with dopants - nitrogen, silicon, titanium, and aluminum oxide and undoped Gallium-Antimonide (GaSb) are studied for these desired characteristics. Thin films of these compositions are deposited via physical vapor deposition at IBM Watson Research Center. Crystallization temperatures are investigated using time resolved x-ray diffraction at Brookhaven National Laboratory

  19. Phase transformation in Mg—Sb3Te thin films

    International Nuclear Information System (INIS)

    Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

    2014-01-01

    Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

  20. Phase transition in lead titanate thin films: a Brillouin study

    International Nuclear Information System (INIS)

    Kuzel, P; Dugautier, C; Moch, P; Marrec, F Le; Karkut, M G

    2002-01-01

    The elastic properties of both polycrystalline and epitaxial PbTiO 3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO 3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa 2 Cu 3 O 7 . The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO 2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, T C is higher in the sol-gel films, while in the epitaxial films the sign of the T C shift depends on the underlying material

  1. Liquid phase deposition of silica: Thin films, colloids and fullerenes

    Science.gov (United States)

    Whitsitt, Elizabeth A.

    Little research has been done to explore liquid phase deposition (LPD) of silica on non-planar substrates. This thesis proves that the seeded growth of silica colloids from fullerene and surfactant micelles is possible via LPD, as is the coating of individual single walled carbon nanotubes (SWNTs) and carbon fibers. Working on the premise that a molecular growth mechanism (versus colloidal/gel deposition) is valid for LPD, nanostructured substrates and specific chemical functional groups should act as "seeds," or templates, for silica growth. Seeded growth is confirmed by reactions of the growth solution with a range of surfactants and with materials with distinctive surface moieties. LPD promises lower production costs and environmental impact as compared to present methods of coating technology, because it is an inherently simple process, using low temperatures and inexpensive air-stable reactants. Silica is ubiquitous in materials science. Its applications range from thixotropic additives for paint to gate dielectrics in the semiconductor industry. Nano-structured coatings and thin films are integral in today's electronics industry and will become more vital as the size of electronics shrinks. With the incorporation of nanoparticles in future devices, the ability to deposit quality coatings with finely tuned properties becomes paramount. The methods developed herein have applications in fabricating insulators for use in the future molecular scale electronics industry. Additionally, these silica nanoparticles have applications as templates for use in photonics and fuel cell membrane production and lend strength and durability to composites.

  2. Chemically modified cellulose paper as a thin film microextraction phase.

    Science.gov (United States)

    Saraji, Mohammad; Farajmand, Bahman

    2013-11-01

    In this paper, chemically modified cellulose paper was introduced as a novel extracting phase for thin film microextraction (TFME). Different reagents (Octadecyltrichlorosilane, diphenyldichlorosilane, cyclohexyl isocyanate and phenyl isocyanate) were used to modify the cellulose papers. The modified papers were evaluated as a sorbent for the extraction of some synthetic and natural estrogenic hormones (17α-ethynylestradiol, estriol and estradiol) from aqueous samples. Liquid chromatography-fluorescence detection was used for the quantification of the extracted compounds. The cellulose paper modified with phenyl isocyanate showed the best affinity to the target compounds. TEME parameters such as desorption condition, shaking rate, sample ionic strength and extraction time were investigated and optimized. Limit of detections were between 0.05 and 0.23μgL(-1) and relative standard deviations were less than 11.1% under the optimized condition. The calibration curves were obtained in the range of 0.2-100μgL(-1) with a good linearity (r(2)>0.9935). Wastewater, human urine, pool and river water samples were studied as real samples for the evaluation of the method. Relative recoveries were found to be between 75% and 101%. Copyright © 2013 Elsevier B.V. All rights reserved.

  3. Self-assembled single-phase perovskite nanocomposite thin films.

    Science.gov (United States)

    Kim, Hyun-Suk; Bi, Lei; Paik, Hanjong; Yang, Dae-Jin; Park, Yun Chang; Dionne, Gerald F; Ross, Caroline A

    2010-02-10

    Thin films of perovskite-structured oxides with general formula ABO(3) have great potential in electronic devices because of their unique properties, which include the high dielectric constant of titanates, (1) high-T(C) superconductivity in cuprates, (2) and colossal magnetoresistance in manganites. (3) These properties are intimately dependent on, and can therefore be tailored by, the microstructure, orientation, and strain state of the film. Here, we demonstrate the growth of cubic Sr(Ti,Fe)O(3) (STF) films with an unusual self-assembled nanocomposite microstructure consisting of (100) and (110)-oriented crystals, both of which grow epitaxially with respect to the Si substrate and which are therefore homoepitaxial with each other. These structures differ from previously reported self-assembled oxide nanocomposites, which consist either of two different materials (4-7) or of single-phase distorted-cubic materials that exhibit two or more variants. (8-12) Moreover, an epitaxial nanocomposite SrTiO(3) overlayer can be grown on the STF, extending the range of compositions over which this microstructure can be formed. This offers the potential for the implementation of self-organized optical/ferromagnetic or ferromagnetic/ferroelectric hybrid nanostructures integrated on technologically important Si substrates with applications in magnetooptical or spintronic devices.

  4. Investigation of phase transformation for ferrite–austenite structure in stainless steel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Merakeb, Noureddine [Laboratory of Physical Metallurgy and Property of Materials (LM2PM), Metallurgy and Materials Engineering Department, Badji Mokhtar University, P.O. Box 12, Annaba 23000 (Algeria); Messai, Amel [Laboratoire d' Ingénierie et Sciences des Matériaux Avancés (ISMA), Institut des Sciences et Technologie, Abbès Laghrour University, Khenchela 40000 (Algeria); Ayesh, Ahmad I., E-mail: ayesh@qu.edu.qa [Department of Mathematics, Statistics and Physics, Qatar University, Doha (Qatar)

    2016-05-01

    In this work we report on phase transformation of 304 stainless steel thin films due to heat treatment. Ex-situ annealing was applied for evaporated 304 stainless steel thin films inside an ultra-high vacuum chamber with a pressure of 3 × 10{sup −7} Pa at temperatures of 500 °C and 600 °C. The structure of thin films was studied by X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS) techniques. The results revealed a transformation from α-phase that exhibits a body-centered cubic structure (BCC) to γ-phase that exhibits a face-centered cubic (FCC) due to annealing. In addition, the percentage of γ-phase structure increased with the increase of annealing temperature. Annealing thin films increased the crystal size of both phases (α and γ), however, the increase was nonlinear. The results also showed that phase transformation was produced by recrystallization of α and γ crystals with a temporal evolution at each annealing temperature. The texture degree of thin films was investigated by XRD rocking curve method, while residual stress was evaluated using curvature method. - Highlights: • Stainless steel thin films were fabricated by thermal evaporation on quartz. • Alpha to gamma phase transformation of thin films was investigated. • Annealing of thin films reduces disruption in crystal lattice. • The stress of as-grown thin films was independent on the thin film thickness. • The stress of the thin films was reduced due to annealing.

  5. PCM Concrete. [Phase Change Materials

    Energy Technology Data Exchange (ETDEWEB)

    Juul Andersen, T. [Danish Technological Institute, Taastrup (Denmark); Poulsen, H.-H. [BASF A/S, Roedekro (Denmark); Passov, F. [Spaencom A/S, Hedehusene (Denmark); Heiselberg, P. [Aalborg Univ..Aalborg (Denmark)

    2013-04-01

    PCM-Concrete was a research and development project launched in 2009 and finished in 2012. The project, which was funded by The Danish National Advanced Technology Foundation, had a total budget of 1.7 million Euros and included 4 partners: Danish Technological Institute (project manager), Aalborg University, BASF A/S and Spaencom A/S. The overall vision of the project was to reduce energy consumption for heating and cooling in buildings by developing high-performance concrete structures microencapsulated Phase Change Materials (PCM). The PCM used in the project was Micronal produced by BASF A/S. Micronal is small capsules with an acrylic shell and inside a wax with a melting point at approx. 23 deg. C equal to a comfortable indoor temperature. During the melting process thermal energy is transferred to chemical reaction (melting/solidification) depending on PCM being heated up or cooled down. Adding Micronal to concrete would theoretically increase the thermal mass of the concrete and improve the diurnal heat capacity which is the amount of energy that can be stored and released during 24 hours. Nevertheless, it is a relatively new technology that has not received much attention, yet. In the PCM-Concrete project 5 main investigations were carried out: 1) Development of concrete mix design with PCM. 2) Investigation of thermal properties of the PCM concrete: thermal conductivity, specific heat capacity, density. 3) Up-scaling the research to industrial production of PCM-concrete structures. 4) Testing energy efficiency in full scale. 5) Confronting aesthetic and acoustic barriers to full exploitation of the potential of PCM-concrete structures. The results from the test program showed: 1) That the diurnal heat storage capacity is higher for all 4 hollow core decks with tiles attached compared to the reference hollow core deck. 2) The hollow core decks with concrete tiles without PCM performs slightly better than the tiles with PCM. 3) That is was impossible to

  6. Phase field modeling of rapid crystallization in the phase-change material AIST

    Science.gov (United States)

    Tabatabaei, Fatemeh; Boussinot, Guillaume; Spatschek, Robert; Brener, Efim A.; Apel, Markus

    2017-07-01

    We carry out phase field modeling as a continuum simulation technique in order to study rapid crystallization processes in the phase-change material AIST (Ag4In3Sb67Te26). In particular, we simulate the spatio-temporal evolution of the crystallization of a molten area of the phase-change material embedded in a layer stack. The simulation model is adapted to the experimental conditions used for recent measurements of crystallization rates by a laser pulse technique. Simulations are performed for substrate temperatures close to the melting temperature of AIST down to low temperatures when an amorphous state is involved. The design of the phase field model using the thin interface limit allows us to retrieve the two limiting regimes of interface controlled (low temperatures) and thermal transport controlled (high temperatures) dynamics. Our simulations show that, generically, the crystallization velocity presents a maximum in the intermediate regime where both the interface mobility and the thermal transport, through the molten area as well as through the layer stack, are important. Simulations reveal the complex interplay of all different contributions. This suggests that the maximum switching velocity depends not only on material properties but also on the precise design of the thin film structure into which the phase-change material is embedded.

  7. Flexible, Phase Change Fabric for Deployable Decelerators, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — SDMA proposes to develop a flexible fabric containing Phase Change Materials that is suitable for use on Deployable Decelerators. This technology will make...

  8. Blue laser phase change recording system

    International Nuclear Information System (INIS)

    Hofmann, Holger; Dambach, S.Soeren; Richter, Hartmut

    2002-01-01

    The migration paths from DVD phase change recording with red laser to the next generation optical disk formats with blue laser and high NA optics are discussed with respect to optical aberration margins and disc capacities. A test system for the evaluation of phase change disks with more than 20 GB capacity is presented and first results of the recording performance are shown

  9. Charging of carbon thin films in scanning and phase-plate transmission electron microscopy

    DEFF Research Database (Denmark)

    Hettler, Simon; Kano, Emi; Dries, Manuel

    2018-01-01

    A systematic study on charging of carbon thin films under intense electron-beam irradiation was performed in a transmission electron microscope to identify the underlying physics for the functionality of hole-free phase plates. Thin amorphous carbon films fabricated by different deposition techni...

  10. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  11. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  12. Engineering Changes During the Service Phase

    DEFF Research Database (Denmark)

    Vianello, Giovanna; Ahmed, Saeema

    2008-01-01

    This paper focuses upon understanding the characteristics of engineering changes, in particular changes that emerge during the service phase of complex products, and on how these changes can be related to the product development process. For this purpose, a set of engineering change reports from...... an aerospace engine has been analyzed and the findings have been compared with change documentation from drilling machinery for the oil industry. These findings give insights into which phases of the design process should be modified in order to reduce the number of change requests from the service phase...... and to enable designers to efficiently answer the unavoidable change requests. This can be used to improve the product development process in order to take into account the factors leading to changes....

  13. Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

    Science.gov (United States)

    Mio, Antonio M; Privitera, Stefania M S; Bragaglia, Valeria; Arciprete, Fabrizio; Bongiorno, Corrado; Calarco, Raffaella; Rimini, Emanuele

    2017-02-10

    The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge 2 Sb 2 Te 5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge 3 Sb 2 Te 6 , Ge 2 Sb 2 Te 5 , and GeSb 2 Te 4 , alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge 2 Sb 2 Te 5 , the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories

  14. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    Science.gov (United States)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  15. Subthreshold electrical transport in amorphous phase-change materials

    International Nuclear Information System (INIS)

    Gallo, Manuel Le; Kaes, Matthias; Sebastian, Abu; Krebs, Daniel

    2015-01-01

    Chalcogenide-based phase-change materials play a prominent role in information technology. In spite of decades of research, the details of electrical transport in these materials are still debated. In this article, we present a unified model based on multiple-trapping transport together with 3D Poole–Frenkel emission from a two-center Coulomb potential. With this model, we are able to explain electrical transport both in as-deposited phase-change material thin films, similar to experimental conditions in early work dating back to the 1970s, and in melt-quenched phase-change materials in nanometer-scale phase-change memory devices typically used in recent studies. Experimental measurements on two widely different device platforms show remarkable agreement with the proposed mechanism over a wide range of temperatures and electric fields. In addition, the proposed model is able to seamlessly capture the temporal evolution of the transport properties of the melt-quenched phase upon structural relaxation. (paper)

  16. Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

    2008-01-01

    Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

  17. Vibration damping and heat transfer using material phase changes

    Science.gov (United States)

    Kloucek, Petr (Inventor); Reynolds, Daniel R. (Inventor)

    2009-01-01

    A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

  18. Vibration damping and heat transfer using material phase changes

    Science.gov (United States)

    Kloucek, Petr [Houston, TX; Reynolds, Daniel R [Oakland, CA

    2009-03-24

    A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

  19. From phase-change materials to thermoelectrics?

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Matthias N.; Rosenthal, Tobias; Oeckler, Oliver [Dept. of Chemistry, Ludwig Maximilian Univ. Munich (Germany); Stiewe, Christian [German Aerospace Center, Cologne (Germany)

    2010-07-01

    Metastable tellurides play an important role as phase-change materials in data storage media and non-volatile RAM devices. The corresponding crystalline phases with very simple basic structures are not stable as bulk materials at ambient conditions, however, for a broad range of compositions they represent stable high-temperature phases. In the system Ge/Sb/Te, rocksalt-type high-temperature phases are characterized by a large number of vacancies randomly distributed over the cation position, which order as 2D vacancy layers upon cooling. Short-range order in quenched samples produces pronounced nanostructures by the formation of twin domains and finite intersecting vacancy layers. As phase-change materials are usually semimetals or small-bandgap semiconductors and efficient data storage requires low thermal conductivity, bulk materials with similar compositions and properties can be expected to exhibit promising thermoelectric characteristics. Nanostructuring by phase transitions that involve partial vacancy ordering may enhance the efficiency of such thermoelectrics. We have shown that germanium antimony tellurides with compositions close to those used as phase-change materials in rewritable Blu-Ray Discs, e.g. (GeTe){sub 12}Sb{sub 2}Te{sub 3}, exhibit thermoelectric figures of merit of up to ZT = 1.3 at 450 C if a nanodomain structure is induced by rapidly quenching the cubic high-temperature phase. Structural changes have been elucidated by X-ray diffraction and high-resolution electron microscopy. (orig.)

  20. Effect of oxygen on the thermomechanical behavior of tantalum thin films during the β-α phase transformation

    International Nuclear Information System (INIS)

    Knepper, Robert; Stevens, Blake; Baker, Shefford P.

    2006-01-01

    Tantalum thin films were prepared in the metastable β phase, and their thermomechanical behaviors were investigated in situ in an ultrahigh vacuum environment. Controlled levels of oxygen were incorporated into the films either during deposition, by surface oxidation after deposition, or during thermomechanical testing. The transformation from the β phase to the stable α phase takes place in conjunction with a distinct increase in tensile stress. The thermomechanical behavior is strongly affected by the amount of oxygen to which the film is exposed and the method of exposure. Increasing oxygen content inhibits the phase transformation, requiring higher temperatures to reach completion. It is shown that the phase transformation takes place by a nucleation and growth process that is limited by growth. Changes in the activation energy for the phase transformation due to solute drag are estimated as a function of oxygen content and the mechanisms behind the stress evolution are elucidated

  1. Phase change materials science and applications

    CERN Document Server

    Raoux, Simone

    2009-01-01

    ""Phase Change Materials: Science and Applications"" provides a unique introduction of this rapidly developing field. This clearly written volume describes the material science of these fascinating materials from a theoretical and experimental perspective.

  2. Entransy in phase-change systems

    CERN Document Server

    Gu, Junjie

    2014-01-01

    Entransy in Phase-Change Systems summarizes recent developments in the area of entransy, especially on phase-change processes. This book covers new developments in the area including the great potential for energy saving for process industries, decreasing carbon dioxide emissions, reducing energy bills and improving overall efficiency of systems. This concise volume is an ideal book for engineers and scientists in energy-related industries.

  3. Reversible switching in phase-change materials

    OpenAIRE

    Wojciech Wełnic; Matthias Wuttig

    2008-01-01

    Phase-change materials are successfully employed in optical data storage and are becoming a promising candidate for future electronic storage applications. Despite the increasing technological interest, many fundamental properties of these materials remain poorly understood. However, in the last few years the understanding of the material properties of phase-change materials has increased significantly. At the same time, great advances have been achieved in technological applications in elect...

  4. Phase Change Materials for Thermal Energy Storage

    OpenAIRE

    Stiebra, L; Cabulis, U; Knite, M

    2014-01-01

    Phase change materials (PCMs) for thermal energy storage (TES) have become an important subject of research in recent years. Using PCMs for thermal energy storage provides a solution to increase the efficiency of the storage and use of energy in many domestic and industrial sectors. Phase change TES systems offer a number of advantages over other systems (e.g. chemical storage systems): particularly small temperature distance between the storage and retrieval cycles, small unit sizes and lo...

  5. Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials.

    Science.gov (United States)

    Zhu, Zhihua; Evans, Philip G; Haglund, Richard F; Valentine, Jason G

    2017-08-09

    Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated and local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.

  6. Chalcogenides Metastability and Phase Change Phenomena

    CERN Document Server

    Kolobov, Alexander V

    2012-01-01

    A state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.

  7. Encapsulation of phase change materials using rice-husk-char

    International Nuclear Information System (INIS)

    Gondora, Wayne; Doudin, Khalid; Nowakowski, Daniel J.; Xiao, Bo; Ding, Yulong; Bridgwater, Tony; Yuan, Qingchun

    2016-01-01

    Highlights: • Rice-husk-char particles are successfully used in the encapsulation of phase change materials. • Carbon-based phase change microcapsules aim at using the high thermal conductivity of carbon materials. • Carbon from biomass can be used in low and intermediate heat harvest and storage. • Carbon in biomass is captured and to be used in improving energy efficiency. - Abstract: This paper explored a new approach to prepare phase change microcapsules using carbon-based particles via Pickering emulsions for energy storage applications. Rice-husk-char, a by-product in biofuel production, containing 53.58 wt% of carbon was used as a model carbon-based material to encapsulate hexadecane. As a model phase change material, hexadecane was emulsified in aqueous suspensions of rice-husk-char nanoparticles. Water soluble polymers poly(diallyldimethyl-ammonium chloride) and poly(sodium styrene sulfonate) were used to fix the rice-husk-char nanoparticles on the emulsion droplets through layer-by-layer assembly to enhance the structural stability of the microcapsules. The microcapsules formed are composed of a thin shell encompassing a large core consisting of hexadecane. Thermal gravimetrical and differential scanning calorimeter analyses showed the phase change enthalpy of 80.9 kJ kg"−"1 or 120.0 MJ m"−"3. Design criteria of phase change microcapsules and preparation considerations were discussed in terms of desired applications. This work demonstrated possible utilisations of biomass-originated carbon-based material for thermal energy recovery and storage applications, which can be a new route of carbon capture and utilisation.

  8. Cation disorder and gas phase equilibrium in an YBa 2Cu 3O 7- x superconducting thin film

    Science.gov (United States)

    Shin, Dong Chan; Ki Park, Yong; Park, Jong-Chul; Kang, Suk-Joong L.; Yong Yoon, Duk

    1997-02-01

    YBa 2Cu 3O 7- x superconducting thin films have been grown by in situ off-axis rf sputtering with varying oxygen pressure, Ba/Y ratio in a target, and deposition temperature. With decreasing oxygen pressure, increasing Ba/Y ratio, increasing deposition temperature, the critical temperature of the thin films decreased and the c-axis length increased. The property change of films with the variation of deposition variables has been explained by a gas phase equilibrium of the oxidation reaction of Ba and Y. Applying Le Chatelier's principle to the oxidation reaction, we were able to predict the relation of deposition variables and the resultant properties of thin films; the prediction was in good agreement with the experimental results. From the relation between the three deposition variables and gas phase equilibrium, a 3-dimensional processing diagram was introduced. This diagram has shown that the optimum deposition condition of YBa 2Cu 3O 7- x thin films is not a fixed point but can be varied. The gas phase equilibrium can also be applied to the explanation of previous results that good quality films were obtained at low deposition temperature using active species, such as O, O 3, and O 2+.

  9. Thermal Energy Storage with Phase Change Material

    Directory of Open Access Journals (Sweden)

    Lavinia Gabriela SOCACIU

    2012-08-01

    Full Text Available Thermal energy storage (TES systems provide several alternatives for efficient energy use and conservation. Phase change materials (PCMs for TES are materials supplying thermal regulation at particular phase change temperatures by absorbing and emitting the heat of the medium. TES in general and PCMs in particular, have been a main topic in research for the last 30 years, but although the information is quantitatively enormous, it is also spread widely in the literature, and difficult to find. PCMs absorb energy during the heating process as phase change takes place and release energy to the environment in the phase change range during a reverse cooling process. PCMs possesses the ability of latent thermal energy change their state with a certain temperature. PCMs for TES are generally solid-liquid phase change materials and therefore they need encapsulation. TES systems using PCMs as a storage medium offers advantages such as high TES capacity, small unit size and isothermal behaviour during charging and discharging when compared to the sensible TES.

  10. Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

    Science.gov (United States)

    Habermeier, H.-U.

    2008-10-01

    Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

  11. Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

    International Nuclear Information System (INIS)

    Habermeier, H-U

    2008-01-01

    Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

  12. Similarity solutions for phase-change problems

    Science.gov (United States)

    Canright, D.; Davis, S. H.

    1989-01-01

    A modification of Ivantsov's (1947) similarity solutions is proposed which can describe phase-change processes which are limited by diffusion. The method has application to systems that have n-components and possess cross-diffusion and Soret and Dufour effects, along with convection driven by density discontinuities at the two-phase interface. Local thermal equilibrium is assumed at the interface. It is shown that analytic solutions are possible when the material properties are constant.

  13. Elasticity Constants of a Two-Phase Tungsten Thin Film

    Directory of Open Access Journals (Sweden)

    Mohamed Fares Slim

    2018-05-01

    Full Text Available The IET was used to determine the macroscopic elasticity constants of the multiphase coating. In order to determine the macroscopic elasticity constants of the film firstly, a critical assessment of Young’s modulus determination was done by comparing all the models proposed in the literature. The best model was identified and a study was performed to identify and quantify the most influent factors on the global uncertainty. Secondly, an enhanced formulation to determine the shear modulus of coating by IET was developed. The methodology was applied on a tungsten thin film deposited by DC magnetron sputtering.

  14. Analysis and Optimization of Thin Film Ferroelectric Phase Shifters

    Science.gov (United States)

    Romanofsky, Robert R.; VanKeuls, Fred W.; Warner, Joseph D.; Mueller, Carl H.; Alterovitz, Samuel A.; Miranda, Felix A.; Qureshi, A. Haq; Romanofsky, Robert R. (Technical Monitor)

    2000-01-01

    Microwave phase shifters have been fabricated from (YBa2Cu3O(7-delta) or Au)/SrTiO3 and Au/Ba(x)Sr(1-x)TiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counter-parts parts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is approximately equal 5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

  15. Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films

    International Nuclear Information System (INIS)

    Grieseler, Rolf; Hähnlein, Bernd; Stubenrauch, Mike; Kups, Thomas; Wilke, Marcus; Hopfeld, Marcus; Pezoldt, Jörg; Schaaf, Peter

    2014-01-01

    The knowledge of the mechanical properties of new materials determines essentially their usability and functionality when used in micro- and nanostructures. MAX phases are new and highly interesting materials due to their unique combination of materials properties. In this article a new method for producing the Cr 2 AlC MAX phase is presented. Thin film elemental multilayer deposition and subsequent rapid thermal annealing forms the MAX phase within seconds. Additionally, free standing microstructures (beams and cantilevers) based on this MAX phase films are prepared by plasma etching. The mechanical properties of these MAX phase microstructures are investigated

  16. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2006-01-01

    We investigate the dielectric properties of a thin VO2 film in the terahertz frequency range in the vicinity of the semiconductor-metal phase transition. Phase-sensitive broadband spectroscopy in the frequency region below the phonon bands of VO2 gives insight into the conductive properties...... of the film during the phase transition. We compare our experimental data with models proposed for the evolution of the phase transition. The experimental data show that the phase transition occurs via the gradual growth of metallic domains in the film, and that the dielectric properties of the film...

  17. Crystallization kinetics of phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Klein, Michael; Sontheimer, Tobias; Wuttig, Matthias [I. Physikalisches Institut (1A), RWTH Aachen (Germany)

    2008-07-01

    Phase change materials are fascinating materials. They can be rapidly switched between two metastable states, the amorphous and crystalline phase, which show pronounced contrast in their optical and electrical properties. They are already widely used as the active layer in rewritable optical media and are expected to be used in the upcoming phase change random access memory (PRAM). Here we show measurements of the crystallization kinetics of chalcogenide materials that lead to a deeper understanding of these processes. This work focuses mainly on the Ge-Sb-Te system but also includes Ag-In-Te materials. The crystallization behaviour of these materials was investigated with an ex-situ annealing method employing the precise oven of a differential scanning calorimeter and imaging techniques employing atomic force microscopy and optical microscopy.

  18. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  19. Thin film-XRF determination of uranium following thin-film solid phase extraction

    Energy Technology Data Exchange (ETDEWEB)

    Hassan, Jalal, E-mail: jalalhassan@ut.ac.ir [Department of Toxicology, Faculty of Veterinary Medicine, University of Tehran (Iran, Islamic Republic of); Hosseini, Seyed M.; Mozaffari, Shahla [Department of Chemistry, Payame Noor University, Tehran (Iran, Islamic Republic of); Jahanparast, Babak; Karbasi, Mohammad H. [Iranian Mineral Processing Research Center, Ministry of Industry and Mineral, Karaj (Iran, Islamic Republic of)

    2014-07-01

    A sensitive method based on the preconcentration of uranium on modified filter paper (thin film) has been developed to determinate this element in water and soil samples by wavelength dispersive X-ray fluorescence. Uranium (VI) extraction from nitric acid medium by trioctyl phosphine (TOPO) from 100 mL of sample was carried out. The effects of nitric acid concentration, TOPO concentration and sample breakthrough on uranium extraction were investigated in this study. The proposed method provided good linearity from 7 to 1000 μg and the limit of detection (LOD), based on a signal-to noise ratio (S/N) of 3, was 2.5 μg. (author)

  20. Preconcentration in gas or liquid phases using adsorbent thin films

    Directory of Open Access Journals (Sweden)

    Antonio Pereira Nascimento Filho

    2006-03-01

    Full Text Available The possibility of preconcentration on microchannels for organic compounds in gas or liquid phases was evaluated. Microstructures with different geometries were mechanically machined using poly(methyl methacrylate - PMMA as substrates and some cavities were covered with cellulose. The surfaces of the microchannels were modified by plasma deposition of hydrophilic or hydrophobic films using 2-propanol and hexamethyldisilazane (HMDS, respectively. Double layers of HMDS + 2-propanol were also used. Adsorption characterization was made by Quartz Crystal Measurements (QCM technique using reactants in a large polarity range that showed the adsorption ability of the structures depends more on the films used than on the capillary phenomena. Cellulose modified by double layer film showed a high retention capacity for all gaseous compounds tested. However, structures without plasma deposition showed low retention capacity. Microchannels modified with double layers or 2-propanol plasma films showed higher retention than non-modified ones on gas or liquid phase.

  1. Simulation studies of GST phase change alloys

    Science.gov (United States)

    Martyna, Glenn

    2008-03-01

    In order to help drive post-Moore's Law technology development, switching processes involving novel materials, in particular, GeSbTe (GST) alloys are being investigated for use in memory and eFuse applications. An anneal/quench thermal process crystallizes/amorphosizes a GST alloy which then has a low/high resistance and thereby forms a readable/writeable bit; for example, a ``one'' might be the low resistance, conducting crystalline state and a ``zero'' might be the high resistance, glassy state. There are many open questions about the precise nature of the structural transitions and the coupling to electronic structure changes. Computational and experimental studies of the effect of pressure on the GST materials were initiated in order to probe the physics behind the thermal switching process. A new pathway to reversible phase change involving pressure-induced structural metal insulator transitions was discovered. In a binary GS system, a room-temperature, direct, pressure-induced transformation from the high resistance amorphous phase to the low resistance crystalline phase was observed experimentally while the reverse process under tensile load was demonstrated via ab initio MD simulations performed on IBM's Blue Gene/L enabled by massively parallel software. Pressure induced transformations of the ternary material GST-225 (Ge2Sb2Te5) were, also, examined In the talk, the behavior of the two systems will be compared and insight into the nature of the phase change given.

  2. Layered ternary Mn+1AXn phases and their 2D derivative MXene: an overview from a thin-film perspective

    International Nuclear Information System (INIS)

    Eklund, Per; Rosen, Johanna; Persson, Per O Å

    2017-01-01

    Inherently and artificially layered materials are commonly investigated both for fundamental scientific purposes and for technological application. When a layered material is thinned or delaminated to its physical limits, a two-dimensional (2D) material is formed and exhibits novel properties compared to its bulk parent phase. The complex layered phases known as ‘MAX phases’ (where M  =  early transition metal, A  =  A-group element, e.g. Al or Si, and X  =  C or N) are an exciting model system for materials design and the understanding of process-structure-property relationships. When the A layers are selectively etched from the MAX phases, a new type of 2D material is formed, named MXene to emphasize the relation to the MAX phases and the parallel with graphene. Since their discovery in 2011, MXenes have rapidly become established as a novel class of 2D materials with remarkable possibilities for composition variations and property tuning. This article gives a brief overview of MAX phases and MXene from a thin-film perspective, reviewing theory, characterization by electron microscopy, properties and how these are affected by the change in dimensionality, and outstanding challenges. (topical review)

  3. Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

    Science.gov (United States)

    2014-09-01

    function of heating rate. The FWHM of the Ill PZT texture components is sim 2978 Journal of the American Ceramic Society Mhin et al. Vol. 97, No. 9...Z39.18 ABSTRACT Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates Report Title The crystallization of lead zirconate...phase influencing texture evolution. The results suggest that PZT nucleates directly on Pt, which explains the observation of a more highly oriented

  4. Use of low volatility mobile phases in electroosmotic thin-layer chromatography.

    Science.gov (United States)

    Berezkin, V G; Balushkin, A O; Tyaglov, B V; Litvin, E F

    2005-08-19

    A variant of electroosmotic thin-layer chromatography is suggested with the use of low volatility compounds as mobile phases aimed at drastically decreasing the evaporation of the mobile phase and improving the reproducibility of the method. The linear movement velocity of zones of separated compounds is experimentally shown to increase 2-12-fold in electroosmotic chromatography (compared to similar values in traditional TLC). The separation efficiency is also considerably increased.

  5. Quality criteria for phase change materials selection

    International Nuclear Information System (INIS)

    Vitorino, Nuno; Abrantes, João C.C.; Frade, Jorge R.

    2016-01-01

    Highlights: • Selection criteria of phase change materials for representative applications. • Selection criteria based on reliable solutions for latent heat transfer. • Guidelines for the role of geometry and heat transfer mechanisms. • Performance maps based on PCM properties, operating conditions, size and time scales. - Abstract: Selection guidelines are primary criterion for optimization of materials for specific applications in order to meet simultaneous and often conflicting requirements. This is mostly true for technologies and products required to meet the main societal needs, such as energy. In this case, gaps between supply and demand require strategies for energy conversion and storage, including thermal storage mostly based on phase change materials. Latent heat storage is also very versatile for thermal management and thermal control by allowing high storage density within narrow temperature ranges without strict dependence between stored thermal energy and temperature. Thus, this work addressed the main issues of latent heat storage from a materials selection perspective, based on expected requirements of applications in thermal energy storage or thermal regulation. Representative solutions for the kinetics of latent heat charge/discharge were used to derive optimization guidelines for high energy density, high power, response time (from fast response to thermal inertia), etc. The corresponding property relations were presented in graphical forms for a wide variety of prospective phase change materials, and for wide ranges of operating conditions, and accounting for changes in geometry and mechanisms.

  6. Synthesis of nanocrystalline TiO 2 thin films by liquid phase ...

    Indian Academy of Sciences (India)

    A transparent, high purity titanium dioxide thin film composed of densely packed nanometer sized grains has been successfully deposited on a glass substrate at 30°C from an aqueous solution of TiO2–HF with the addition of boric acid as a scavenger by liquid phase deposition technique. From X-ray diffraction ...

  7. Shear-induced phase changes in mixtures

    International Nuclear Information System (INIS)

    Romig, K.D.; Hanley, H.J.M.

    1986-01-01

    A thermodynamic theory to account for the behavior of liquid mixtures exposed to a shear is developed. One consequence of the theory is that shear-induced phase changes are predicted. The theory is based on a thermodynamics that includes specifically the shear rate in the formalism and is applied to mixtures by a straightforward modification of the corresponding states, conformalsolution approach. The approach is general but is used here for a mixture of Lennard-Jones particles with a Lennard-Jones equation of state as a reference fluid. The results are discussed in the context of the Scott and Van Konynenberg phase classification. It is shown that the influence of a shear does affect substantially the type of the phase behavior. Results from the model mixture are equated loosely with those from real polymeric liquids

  8. Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

    Science.gov (United States)

    Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M; Cooper, Valentino R

    2015-08-01

    Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO 3 thin films, which comprises a tetragonal-like ( T ') and an intermediate S ' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T ' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S ' phase is energetically very close to the T ' phase, but is structurally similar to the bulk rhombohedral ( R ) phase. By fully characterizing the intermediate S ' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T ' and S ' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S ' and T ' polymorphs, which have very different octahedral rotation patterns and c / a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO 3 films. Additionally, a blueshift in the band gap when moving from R to S ' to T ' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

  9. Transitional Phenomena on Phase Change Materials

    Directory of Open Access Journals (Sweden)

    Wójcik Tadeusz M.

    2014-03-01

    Full Text Available One of the most significant problem with technology development is transferring of large heat fluxes, which requires constant heat transfer temperature (in the specified temperature range. This problem concern mainly the nuclear energetics, space technologies, military technologies and most of all electronics containing integrated circuits with very large scale of integrations. Intensive heat transfer and thermal energy storage are possible by the use of phase change materials (PCMs. In the paper there are presented preliminary results of research on the use of liquid-gas (L-G PCMs and solid-solid phase change materials (S-S PCMs. For L-G PCMs the boiling characteristics were determined by increasing and decreasing the heat flux, which for certain sets of structural parameters of the heating surface and the physical properties of the liquid induce a variety of forms of transitional phenomena. Thermal energy storage is much more effective when using PCMs than sensible heat.

  10. Thermodynamics phase changes of nanopore fluids

    KAUST Repository

    Islam, Akand W.; Patzek, Tadeusz; Sun, Alexander Y.

    2015-01-01

    The van der Waals (vdW) equation (Eq.) is modified to describe thermodynamic of phase behavior of fluids confined in nanopore. Our aim is to compute pressures exerted by the fluid molecules and to investigate how they change due to pore proximity by assuming the pore wall is inert. No additional scaling of model parameters is imposed and original volume and energy parameters are used in the calculations. Our results clearly show the phase changes due to confinement. The critical shifts of temperatures and pressures are in good agreement compared to the laboratory data and molecular simulation. Peng-Robinson (PR) equation-of-state (EOS) has resulted in different effect than the vdW. This work delivers insights into the nature of fluid behavior in extremely low-permeability nanoporous media, especially in the tight shale reservoirs, below the critical temperatures. © 2015 Elsevier B.V.

  11. Thermodynamics phase changes of nanopore fluids

    KAUST Repository

    Islam, Akand W.

    2015-07-01

    The van der Waals (vdW) equation (Eq.) is modified to describe thermodynamic of phase behavior of fluids confined in nanopore. Our aim is to compute pressures exerted by the fluid molecules and to investigate how they change due to pore proximity by assuming the pore wall is inert. No additional scaling of model parameters is imposed and original volume and energy parameters are used in the calculations. Our results clearly show the phase changes due to confinement. The critical shifts of temperatures and pressures are in good agreement compared to the laboratory data and molecular simulation. Peng-Robinson (PR) equation-of-state (EOS) has resulted in different effect than the vdW. This work delivers insights into the nature of fluid behavior in extremely low-permeability nanoporous media, especially in the tight shale reservoirs, below the critical temperatures. © 2015 Elsevier B.V.

  12. Dimension changing phase transitions in instanton crystals

    International Nuclear Information System (INIS)

    Kaplunovsky, Vadim; Sonnenschein, Jacob

    2014-01-01

    We investigate lattices of instantons and the dimension-changing transitions between them. Our ultimate goal is the 3D→4D transition, which is holographically dual to the phase transition between the baryonic and the quarkyonic phases of cold nuclear matter. However, in this paper (just as in http://dx.doi.org/10.1007/JHEP11(2012)047) we focus on lower dimensions — the 1D lattice of instantons in a harmonic potential V∝M 2 2 x 2 2 +M 3 2 x 2 2 +M 4 2 x 4 2 , and the zigzag-shaped lattice as a first stage of the 1D→2D transition. We prove that in the low- and moderate-density regimes, interactions between the instantons are dominated by two-body forces. This drastically simplifies finding the ground state of the instantons’ orientations, so we made a numeric scan of the whole orientation space instead of assuming any particular ansatz. We find that depending on the M 2 /M 3 /M 4 ratios, the ground state of instanton orientations can follow a wide variety of patterns. For the straight 1D lattices, we found orientations periodically running over elements of a ℤ 2 , Klein, prismatic, or dihedral subgroup of the SU(2)/ℤ 2 , as well as irrational but link-periodic patterns. For the zigzag-shaped lattices, we detected 4 distinct orientation phases — the anti-ferromagnet, another abelian phase, and two non-abelian phases. Allowing the zigzag amplitude to vary as a function of increasing compression force, we obtained the phase diagrams for the straight and zigzag-shaped lattices in the (force,M 3 /M 4 ), (chemical potential,M 3 /M 4 ), and (density,M 3 /M 4 ) planes. Some of the transitions between these phases are second-order while others are first-order. Our techniques can be applied to other types of non-abelian crystals

  13. Phase transitions in LiCoO2 thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Huang Rong; Hitosugi, Taro; Fisher, Craig A.J.; Ikuhara, Yumi H.; Moriwake, Hiroki; Oki, Hideki; Ikuhara, Yuichi

    2012-01-01

    Highlights: ► Epitaxial LiCoO 2 thin films were formed on the Al 2 O 3 (0 0 0 1) substrate by PLD at room temperature and annealed at 600 °C in air. ► The orientation relationship between film and substrate is revealed. ► Crystalline phases in the RT deposited and annealed thin films are clearly identified. ► Atomic level interface structure indicates an interface reaction during annealing. ► A phase transition mechanism from fully disordered LiCoO 2 to fully ordered LiCoO 2 is proposed. - Abstract: Microstructures of epitaxial LiCoO 2 thin films formed on the (0 0 0 1) surface of sapphire (α-Al 2 O 3 ) substrates by pulsed laser deposition at room temperature and annealed at 600 °C in air were investigated by a combination of selected-area electron diffraction, high-resolution transmission electron microscopy, spherical-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy, and electron energy-loss spectroscopy. As-deposited LiCoO 2 thin films consisted of epitaxial grains of the fully cation-disordered phase (γ) with a cubic rock-salt structure. During annealing, this cubic-structured phase transformed into the fully ordered trigonal (α) phase oriented with its basal plane parallel to the surface of the sapphire substrate. Although overall the film appeared to be a single crystal, a small number of Co 3 O 4 grains were also observed in annealed thin films, indicating that some Li and O had been lost during processing. The atomically sharp interface between the film and substrate also became rougher during annealing, with step defects being formed, suggesting that a localized reaction occurred at the interface.

  14. Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Avijit; Biswas, Bipul; Majumder, Manisree; Sanyal, Manik Kumar; Mallik, Biswanath, E-mail: spbm@iacs.res.in

    2012-08-31

    Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 Degree-Sign C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable {alpha} to {beta}-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 Degree-Sign C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful 'honey-comb' like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated. - Highlights: Black-Right-Pointing-Pointer Morphology and orientation of grains in zinc phthalocyanine (ZnPc) thin films. Black

  15. Electron irradiation effect on the reverse phase transformation temperatures in TiNi shape memory alloy thin films

    International Nuclear Information System (INIS)

    Wang, Z.G.; Zu, X.T.; Fu, Y.Q.; Zhu, S.; Wang, L.M.

    2005-01-01

    In this work, Ti-Ni shape memory alloy thin films were irradiated by 1.7 MeV electron with three types of fluences: 4 x 10 20 , 7 x 10 20 and 1 x 10 21 /m 2 . The influence of electron irradiation on the transformation behavior of the TiNi thin films were investigated by differential scanning calorimetry. The transformation temperatures A s and A f shifted to higher temperature after electron irradiation, the martensite was stabilized. The electron irradiation effect can be easily eliminated by one thermal cycle. The shifts of the transformation temperatures can be explained from the change of potential energy barrier and coherency energy between parent phase and martensite after irradiation

  16. Electronic transport in amorphous phase-change materials

    Energy Technology Data Exchange (ETDEWEB)

    Luckas, Jennifer Maria

    2012-09-14

    in an increasing concentration of shallow defect states, whereas the detected density of deep mid gap states decreases. In contrast to both defect levels the conduction and valence band tail remained unaffected during resistance drift of a-GeTe thin films. These findings of the thesis clearly demonstrate the impact of band gap opening and trap kinetics on resistance drift in a-GeTe. Furthermore, drift phenomena observed in a-GeTe are compared to drift phenomena of covalent glasses known from literature. This comparison reveals wide differences between drift phenomena in chalcogenide and covalent glasses. Furthermore this thesis discusses the stoichiometric dependence of resistance drift phenomena in a-GeSnTe phase-change alloys. A systematic decrease in the amorphous state resistivity, activation energy for electric conduction, optical band gap and defect density is observed with increasing tin content resulting in a low resistance drift for tin rich compositions such as a-Ge{sub 2}Sn{sub 2}Te{sub 4}. This study on GeSnTe systems demonstrates, that phase change alloys showing a more stable amorphous state resistivity are characterized by a low activation energy of electronic conduction. This finding found in GeSnTe alloys holds also true for GeSbTe and AgInSbTe systems. On the example of a-Ge{sub 2}Sn{sub 2}Te{sub 4} and a-GeTe - the latter exhibiting a strong resistance drift - the evolution of the amorphous state resistivity is shown to be closely linked to the relaxation of internal mechanical stresses resulting in an improving structural ordering of the amorphous phase.

  17. Electronic transport in amorphous phase-change materials

    International Nuclear Information System (INIS)

    Luckas, Jennifer Maria

    2012-01-01

    the detected density of deep mid gap states decreases. In contrast to both defect levels the conduction and valence band tail remained unaffected during resistance drift of a-GeTe thin films. These findings of the thesis clearly demonstrate the impact of band gap opening and trap kinetics on resistance drift in a-GeTe. Furthermore, drift phenomena observed in a-GeTe are compared to drift phenomena of covalent glasses known from literature. This comparison reveals wide differences between drift phenomena in chalcogenide and covalent glasses. Furthermore this thesis discusses the stoichiometric dependence of resistance drift phenomena in a-GeSnTe phase-change alloys. A systematic decrease in the amorphous state resistivity, activation energy for electric conduction, optical band gap and defect density is observed with increasing tin content resulting in a low resistance drift for tin rich compositions such as a-Ge 2 Sn 2 Te 4 . This study on GeSnTe systems demonstrates, that phase change alloys showing a more stable amorphous state resistivity are characterized by a low activation energy of electronic conduction. This finding found in GeSnTe alloys holds also true for GeSbTe and AgInSbTe systems. On the example of a-Ge 2 Sn 2 Te 4 and a-GeTe - the latter exhibiting a strong resistance drift - the evolution of the amorphous state resistivity is shown to be closely linked to the relaxation of internal mechanical stresses resulting in an improving structural ordering of the amorphous phase.

  18. Phase Composition of Samarium Niobate and Tantalate Thin Films Prepared by Sol-Gel Method

    Science.gov (United States)

    Bruncková, H.; Medvecký, Ľ.; Múdra, E.; Kovalčiková, A.; Ďurišin, J.; Šebek, M.; Girman, V.

    2017-12-01

    Samarium niobate SmNbO4 (SNO) and tantalate SmTaO4 (STO) thin films ( 100 nm) were prepared by sol-gel/spin-coating process on alumina substrates with PZT interlayer and annealing at 1000°C. The precursors of films were synthesized using Nb or Ta tartrate complexes. The improvement of the crystallinity of monoclinic M'-SmTaO4 phase via heating was observed through the coexistence of small amounts of tetragonal T-SmTa7O19 phase in STO precursor at 1000°C. The XRD results of SNO and STO films confirmed monoclinic M-SmNbO4 and M'-SmTaO4 phases, respectively, with traces of orthorhombic O-SmNbO4 (in SNO). In STO film, the single monoclinic M'-SmTaO4 phase was revealed. The surface morphology and topography of thin films were investigated by SEM and AFM analysis. STO film was smoother with roughness 3.2 nm in comparison with SNO (6.3 nm). In the microstructure of SNO film, small spherical ( 50 nm) and larger cuboidal particles ( 100 nm) of the SmNbO4 phase were observed. In STO, compact clusters composed of fine spherical SmTaO4 particles ( 20-50 nm) were found. Effect of samarium can contribute to the formation different polymorphs of these films for the application to environmental electrolytic thin film devices.

  19. The phase diagrams of a ferromagnetic thin film in a random magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Zaim, N.; Zaim, A., E-mail: ah_zaim@yahoo.fr; Kerouad, M., E-mail: m.kerouad@fs-umi.ac.ma

    2016-10-07

    In this paper, the magnetic properties and the phase diagrams of a ferromagnetic thin film with a thickness N in a random magnetic field (RMF) are investigated by using the Monte Carlo simulation technique based on the Metropolis algorithm. The effects of the RMF and the surface exchange interaction on the critical behavior are studied. A variety of multicritical points such as tricritical points, isolated critical points, and triple points are obtained. It is also found that the double reentrant phenomenon can appear for appropriate values of the system parameters. - Highlights: • Phase diagrams of a ferromagnetic thin film are examined by the Monte Carlo simulation. • The effect of the random magnetic field on the magnetic properties is studied. • Different types of the phase diagrams are obtained. • The dependence of the magnetization and susceptibility on the temperature are investigated.

  20. Thin film solar cells grown by organic vapor phase deposition

    Science.gov (United States)

    Yang, Fan

    Organic solar cells have the potential to provide low-cost photovoltaic devices as a clean and renewable energy resource. In this thesis, we focus on understanding the energy conversion process in organic solar cells, and improving the power conversion efficiencies via controlled growth of organic nanostructures. First, we explain the unique optical and electrical properties of organic materials used for photovoltaics, and the excitonic energy conversion process in donor-acceptor heterojunction solar cells that place several limiting factors of their power conversion efficiency. Then, strategies for improving exciton diffusion and carrier collection are analyzed using dynamical Monte Carlo models for several nanostructure morphologies. Organic vapor phase deposition is used for controlling materials crystallization and film morphology. We improve the exciton diffusion efficiency while maintaining good carrier conduction in a bulk heterojunction solar cell. Further efficiency improvement is obtained in a novel nanocrystalline network structure with a thick absorbing layer, leading to the demonstration of an organic solar cell with 4.6% efficiency. In addition, solar cells using simultaneously active heterojunctions with broad spectral response are presented. We also analyze the efficiency limits of single and multiple junction organic solar cells, and discuss the challenges facing their practical implementations.

  1. Size effects on structural and dielectric properties of PZT thin films at compositions around the morpho tropic phase boundary

    International Nuclear Information System (INIS)

    Lima, Elton Carvalho; Araujo, Eudes Borges; Souza Filho, Antonio Gomes de; Bdikin, Igor

    2011-01-01

    Full text: The demand for portability in consumer electronics has motivated the understanding of size effects on ferroelectric thin films. The actual comprehension of these effects in ferroelectrics is unsatisfactory, since the polarization interacts more strongly than other order parameters such as strain and charge. As a result, extrinsic effects are produced if these variables are uncontrolled and problems such as ferroelectric paraelectric phase transition at nanometers scale remains an unsolved issue. In the present work, the effects of thickness and compositional fractions on the structural and dielectric properties of PbZr 1-x Ti x O 3 (PZT) thin films were studied at a composition around the morphotropic phase boundary (x = 0.50). For this purpose, thin films with different thicknesses and different PbO excess were deposited on Si(100) and Pt=T iO 2 =SiO 2 =Si substrates by a chemical method and crystallized in electric furnace at 700 deg C for 1 hour. The effects of substrate, pyrolysis temperature and excess lead addition in the films are reported. For films with 10 mol% PbO in excess, the pyrolysis in the regime of 300 deg C for 30 minutes was observed to yield PZT pyrochlore free thin films deposited on Pt=T iO 2 =SiO 2 =Si substrate. Out this condition, the transformation from amorphous to the pyrochlore metastable phase is kinetically more favorable that a transformation to the perovskite phase, which is thermodynamically stable. Rietveld refinements based on X-ray diffraction results showed that films present a purely tetragonal phase and that this phase does not change when the film thickness decreases. The dielectric permittivity measurements showed a monoclinic → tetragonal phase transition at 198K. Results showed that the dielectric permittivity (ε) increases continuously from 257 to 463, while the thickness of the PZT films increases from 200 to 710 nm. These results suggests that interface pinning centers can be the responsible mechanism by

  2. Sb-Te Phase-change Materials under Nanoscale Confinement

    Science.gov (United States)

    Ihalawela, Chandrasiri A.

    Size, speed and efficiency are the major challenges of next generation nonvolatile memory (NVM), and phase-change memory (PCM) has captured a great attention due to its promising features. The key for PCM is rapid and reversible switching between amorphous and crystalline phases with optical or electrical excitation. The structural transition is associated with significant contrast in material properties which can be utilized in optical (CD, DVD, BD) and electronic (PCRAM) memory applications. Importantly, both the functionality and the success of PCM technology significantly depend on the core material and its properties. So investigating PC materials is crucial for the development of PCM technology to realized enhanced solutions. In regards to PC materials, Sb-Te binary plays a significant role as a basis to the well-known Ge-Sb-Te system. Unlike the conventional deposition methods (sputtering, evaporation), electrochemical deposition method is used due to its multiple advantages, such as conformality, via filling capability, etc. First, the controllable synthesis of Sb-Te thin films was studied for a wide range of compositions using this novel deposition method. Secondly, the solid electrolytic nature of stoichiometric Sb2Te3 was studied with respect to precious metals. With the understanding of 2D thin film synthesis, Sb-Te 1D nanowires (18 - 220 nm) were synthesized using templated electrodeposition, where nanoporous anodic aluminum oxide (AAO) was used as a template for the growth of nanowires. In order to gain the controllability over the deposition in high aspect ratio structures, growth mechanisms of both the thin films and nanowires were investigated. Systematic understanding gained thorough previous studies helped to formulate the ultimate goal of this dissertation. In this dissertation, the main objective is to understand the size effect of PC materials on their phase transition properties. The reduction of effective memory cell size in conjunction with

  3. interThermalPhaseChangeFoam—A framework for two-phase flow simulations with thermally driven phase change

    Directory of Open Access Journals (Sweden)

    Mahdi Nabil

    2016-01-01

    Full Text Available The volume-of-fluid (VOF approach is a mature technique for simulating two-phase flows. However, VOF simulation of phase-change heat transfer is still in its infancy. Multiple closure formulations have been proposed in the literature, each suited to different applications. While these have enabled significant research advances, few implementations are publicly available, actively maintained, or inter-operable. Here, a VOF solver is presented (interThermalPhaseChangeFoam, which incorporates an extensible framework for phase-change heat transfer modeling, enabling simulation of diverse phenomena in a single environment. The solver employs object oriented OpenFOAM library features, including Run-Time-Type-Identification to enable rapid implementation and run-time selection of phase change and surface tension force models. The solver is packaged with multiple phase change and surface tension closure models, adapted and refined from earlier studies. This code has previously been applied to study wavy film condensation, Taylor flow evaporation, nucleate boiling, and dropwise condensation. Tutorial cases are provided for simulation of horizontal film condensation, smooth and wavy falling film condensation, nucleate boiling, and bubble condensation. Validation and grid sensitivity studies, interfacial transport models, effects of spurious currents from surface tension models, effects of artificial heat transfer due to numerical factors, and parallel scaling performance are described in detail in the Supplemental Material (see Appendix A. By incorporating the framework and demonstration cases into a single environment, users can rapidly apply the solver to study phase-change processes of interest.

  4. interThermalPhaseChangeFoam-A framework for two-phase flow simulations with thermally driven phase change

    Science.gov (United States)

    Nabil, Mahdi; Rattner, Alexander S.

    The volume-of-fluid (VOF) approach is a mature technique for simulating two-phase flows. However, VOF simulation of phase-change heat transfer is still in its infancy. Multiple closure formulations have been proposed in the literature, each suited to different applications. While these have enabled significant research advances, few implementations are publicly available, actively maintained, or inter-operable. Here, a VOF solver is presented (interThermalPhaseChangeFoam), which incorporates an extensible framework for phase-change heat transfer modeling, enabling simulation of diverse phenomena in a single environment. The solver employs object oriented OpenFOAM library features, including Run-Time-Type-Identification to enable rapid implementation and run-time selection of phase change and surface tension force models. The solver is packaged with multiple phase change and surface tension closure models, adapted and refined from earlier studies. This code has previously been applied to study wavy film condensation, Taylor flow evaporation, nucleate boiling, and dropwise condensation. Tutorial cases are provided for simulation of horizontal film condensation, smooth and wavy falling film condensation, nucleate boiling, and bubble condensation. Validation and grid sensitivity studies, interfacial transport models, effects of spurious currents from surface tension models, effects of artificial heat transfer due to numerical factors, and parallel scaling performance are described in detail in the Supplemental Material (see Appendix A). By incorporating the framework and demonstration cases into a single environment, users can rapidly apply the solver to study phase-change processes of interest.

  5. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation

    KAUST Repository

    Ding, Junfeng; Lin, Zhipeng; Wu, Jianchun; Dong, Zhili; Wu, Tao

    2014-01-01

    Materials with mesoscopic structural and electronic phase separation, either inherent from synthesis or created via external means, are known to exhibit functionalities absent in the homogeneous counterparts. One of the most notable examples is the colossal magnetoresistance discovered in mixed-valence manganites, where the coexistence of nano-to micrometer-sized phase-separated domains dictates the magnetotransport. However, it remains challenging to pattern and process such materials into predesigned structures and devices. In this work, a direct laser interference irradiation (LII) method is employed to produce periodic stripes in thin films of a prototypical phase-separated manganite Pr0.65(Ca0.75Sr0.25)0.35MnO3 (PCSMO). LII induces selective structural amorphization within the crystalline PCSMO matrix, forming arrays with dimensions commensurate with the laser wavelength. Furthermore, because the length scale of LII modification is compatible to that of phase separation in PCSMO, three orders of magnitude of increase in magnetoresistance and significant in-plane transport anisotropy are observed in treated PCSMO thin films. Our results show that LII is a rapid, cost-effective and contamination-free technique to tailor and improve the physical properties of manganite thin films, and it is promising to be generalized to other functional materials.

  6. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation

    KAUST Repository

    Ding, Junfeng

    2014-09-16

    Materials with mesoscopic structural and electronic phase separation, either inherent from synthesis or created via external means, are known to exhibit functionalities absent in the homogeneous counterparts. One of the most notable examples is the colossal magnetoresistance discovered in mixed-valence manganites, where the coexistence of nano-to micrometer-sized phase-separated domains dictates the magnetotransport. However, it remains challenging to pattern and process such materials into predesigned structures and devices. In this work, a direct laser interference irradiation (LII) method is employed to produce periodic stripes in thin films of a prototypical phase-separated manganite Pr0.65(Ca0.75Sr0.25)0.35MnO3 (PCSMO). LII induces selective structural amorphization within the crystalline PCSMO matrix, forming arrays with dimensions commensurate with the laser wavelength. Furthermore, because the length scale of LII modification is compatible to that of phase separation in PCSMO, three orders of magnitude of increase in magnetoresistance and significant in-plane transport anisotropy are observed in treated PCSMO thin films. Our results show that LII is a rapid, cost-effective and contamination-free technique to tailor and improve the physical properties of manganite thin films, and it is promising to be generalized to other functional materials.

  7. PHASE CHANGE AROUND A FINNED TUBE

    Directory of Open Access Journals (Sweden)

    Aytunç EREK

    2003-01-01

    Full Text Available This study presents the heat transfer enhancement in the thermal energy storage system by using radially finned tube. The solution of the system consists of the solving the equations of the heat transfer fluid (HTF, the pipe wall and fin, and the phase change material (PCM as one domain. The control volume finite difference approach and the semi implicit solver (SIS are used to solve the equations. Fully developed velocity distribution is taken in the HTF. Flow parameters (Re number and inlet temperature of coolant and fin parameters (the number of fins, fin length, fin thickness are found to influence solidification fronts and the total stored energy.

  8. Phase change based cooling for high burst mode heat loads with temperature regulation above the phase change temperature

    Science.gov (United States)

    The United States of America as represented by the United States Department of Energy

    2009-12-15

    An apparatus and method for transferring thermal energy from a heat load is disclosed. In particular, use of a phase change material and specific flow designs enables cooling with temperature regulation well above the fusion temperature of the phase change material for medium and high heat loads from devices operated intermittently (in burst mode). Exemplary heat loads include burst mode lasers and laser diodes, flight avionics, and high power space instruments. Thermal energy is transferred from the heat load to liquid phase change material from a phase change material reservoir. The liquid phase change material is split into two flows. Thermal energy is transferred from the first flow via a phase change material heat sink. The second flow bypasses the phase change material heat sink and joins with liquid phase change material exiting from the phase change material heat sink. The combined liquid phase change material is returned to the liquid phase change material reservoir. The ratio of bypass flow to flow into the phase change material heat sink can be varied to adjust the temperature of the liquid phase change material returned to the liquid phase change material reservoir. Varying the flowrate and temperature of the liquid phase change material presented to the heat load determines the magnitude of thermal energy transferred from the heat load.

  9. Finite size effects in phase transformation kinetics in thin films and surface layers

    International Nuclear Information System (INIS)

    Trofimov, Vladimir I.; Trofimov, Ilya V.; Kim, Jong-Il

    2004-01-01

    In studies of phase transformation kinetics in thin films, e.g. crystallization of amorphous films, until recent time is widely used familiar Kolmogorov-Johnson-Mehl-Avrami (KJMA) statistical model of crystallization despite it is applicable only to an infinite medium. In this paper a model of transformation kinetics in thin films based on a concept of the survival probability for randomly chosen point during transformation process is presented. Two model versions: volume induced transformation (VIT) when the second-phase grains nucleate over a whole film volume and surface induced transformation (SIT) when they form on an interface with two nucleation mode: instantaneous nucleation at transformation onset and continuous one during all the process are studied. At VIT-process due to the finite film thickness effects the transformation profile has a maximum in a film middle, whereas that of the grains population reaches a minimum inhere, the grains density is always higher than in a volume material, and the thinner film the slower it transforms. The transformation kinetics in a thin film obeys a generalized KJMA equation with parameters depending on a film thickness and in limiting cases of extremely thin and thick film it reduces to classical KJMA equation for 2D- and 3D-system, respectively

  10. Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

    International Nuclear Information System (INIS)

    Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

    2002-01-01

    The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

  11. Phase transitions in Fe_0_._5Co_0_._5 (110) thin films

    International Nuclear Information System (INIS)

    Ramírez-Dámaso, G.; Castillo-Alvarado, F.L.; Rojas-Hernández, E.

    2016-01-01

    In this paper, we present calculations for two second-order phase transitions in (110) Fe_0_._5Co_0_._5 thin films with 11, 15, and 19 monoatomic layers. The lattice and magnetic transitions are based on thermodynamic equilibrium considerations of the magnetic alloy. The procedure proposed by Valenta and Sukiennicki was applied to calculate the composition x(i), the lattice order parameter t(i), and the magnetic order parameter σ(i) as a function of temperature T. We confirmed that both phase transitions, lattice and magnetic, are of the second order, in accordance with experimental results in the literature. The obtained behavior of these parameters indicates their inhomogeneity due to the boundary conditions on the surfaces of the thin film.

  12. Phase transformation of the brownmillerite SrCoO{sub 2.5} thin film through alkaline water electrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Tambunan, Octolia Togibasa; Lee, Min Young; Kim, Deok Hyeon; Parwanta, Kadek Juliana; Jung, Chang Uk [Hankuk University of Foreign Studies, Yongin (Korea, Republic of)

    2014-06-15

    A phase transformation from insulating brownmillerite SrCoO{sub 2.5} to conducting perovskite SrCoO{sub 3} through electrochemical oxidation has been demonstrated for thin films of SrCoO{sub x} on a SrTiO{sub 3} (001) substrate. The cobalt-oxide film strongly favors the brownmillerite phase of SrCoO{sub 2.5} instead of the perovskite phase of SrCoO{sub 3} on a SrTiO{sub 3} (001) substrate due to its low lattice mismatch. Therefore, the phase transformation has its own retention. The alkaline water electrolysis occurs between the copper cathode and the SrCoO{sub 2.5} film anode. The H{sup +} ions are attracted to the cathode and generate H{sub 2} gas. The OH{sup -} ions are attracted to the film's surface and generate a rich amount of oxygen to fill the oxygen vacancy channel of brownmillerite SrCoO{sub 2.5}. The phase transformation was verified from the change in the out-of-plane lattice constant and the change in the resistivity of the electrolyzed film.

  13. Passive thermal management using phase change materials

    Science.gov (United States)

    Ganatra, Yash Yogesh

    The trend of enhanced functionality and reducing thickness of mobile devices has. led to a rapid increase in power density and a potential thermal bottleneck since. thermal limits of components remain unchanged. Active cooling mechanisms are not. feasible due to size, weight and cost constraints. This work explores the feasibility. of a passive cooling system based on Phase Change Materials (PCMs) for thermal. management of mobile devices. PCMs stabilize temperatures due to the latent heat. of phase change thus increasing the operating time of the device before threshold. temperatures are exceeded. The primary contribution of this work is the identification. of key parameters which influence the design of a PCM based thermal management. system from both the experiments and the numerical models. This work first identifies strategies for integrating PCMs in an electronic device. A. detailed review of past research, including experimental techniques and computational. models, yields key material properties and metrics to evaluate the performance of. PCMs. Subsequently, a miniaturized version of a conventional thermal conductivity. measurement technique is developed to characterize thermal resistance of PCMs. Further, latent heat and transition temperatures are also characterized for a wide. range of PCMs. In-situ measurements with PCMs placed on the processor indicate that some. PCMs can extend the operating time of the device by as much as a factor of 2.48. relative to baseline tests (with no PCMs). This increase in operating time is investigated. by computational thermal models that explore various integration locations, both at the package and device level.

  14. Hybrid Perovskite Thin-Film Photovoltaics: In Situ Diagnostics and Importance of the Precursor Solvate Phases

    KAUST Repository

    Munir, Rahim

    2016-11-07

    Solution-processed hybrid perovskite semiconductors attract a great deal of attention, but little is known about their formation process. The one-step spin-coating process of perovskites is investigated in situ, revealing that thin-film formation is mediated by solid-state precursor solvates and their nature. The stability of these intermediate phases directly impacts the quality and reproducibility of thermally converted perovskite films and their photovoltaic performance.

  15. Optical bistability of a thin film of resonant atoms in a phase-sensitive thermostate

    International Nuclear Information System (INIS)

    Basharov, A.M.

    1995-01-01

    It is shown theoretically that when a thin film of two-level atoms interacting with a resonant coherent electromagnetic wave is additionally illuminated with a squeezed field, a bistable transmission/reflection regime for coherent waves is obtained. This regime depends strongly on the phase difference between the coherent and the squeezed fields. New regimes, including a bistable regime, for the interaction of a coherent field with a film of resonant atoms are predicted based on this phenomenon. 14 refs., 5 figs

  16. Two-phase behavior in strained thin films of hole-doped manganites

    OpenAIRE

    Biswas, Amlan; Rajeswari, M.; Srivastava, R. C.; Li, Y. H.; Venkatesan, T.; Greene, R. L.; Millis, A. J.

    1999-01-01

    We present a study of the effect of biaxial strain on the electrical and magnetic properties of thin films of manganites. We observe that manganite films grown under biaxial compressive strain exhibit island growth morphology which leads to a non-uniform distribution of the strain. Transport and magnetic properties of these films suggest the coexistence of two different phases, a metallic ferromagnet and an insulating antiferromagnet. We suggest that the high strain regions are insulating whi...

  17. Hybrid Perovskite Thin-Film Photovoltaics: In Situ Diagnostics and Importance of the Precursor Solvate Phases

    KAUST Repository

    Munir, Rahim; Sheikh, Arif D.; Abdelsamie, Maged; Hu, Hanlin; Yu, Liyang; Zhao, Kui; Kim, Taesoo; El Tall, Omar; Li, Ruipeng; Smilgies, Detlef M.; Amassian, Aram

    2016-01-01

    Solution-processed hybrid perovskite semiconductors attract a great deal of attention, but little is known about their formation process. The one-step spin-coating process of perovskites is investigated in situ, revealing that thin-film formation is mediated by solid-state precursor solvates and their nature. The stability of these intermediate phases directly impacts the quality and reproducibility of thermally converted perovskite films and their photovoltaic performance.

  18. Effects of thermal treatment conditions on the phase formation and the morphological changes of sol-gel derived 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films

    International Nuclear Information System (INIS)

    Yang, Sun A; Han, Jin Kyu; Choi, Yong Chan; Bu, Sang Don

    2011-01-01

    We report the synthesis of Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) thin films and the effects of thermal conditions on their surface morphologies and phase formation behaviors. The PMN-PT thin films were prepared by spin-coating PMN-PT sol-gel solutions on Pt/Ti/SiO 2 /Si substrates and subsequent thermal treatments including pyrolysis, annealing, and additional pre-annealing. We found that the surface morphologies and the formation of the perovskite phase were strongly affected by the final annealing temperature. The grain size of perovskite phase and the amount of the perovskite phase increased as the annealing temperature was increased from 550 to 800 .deg. C. We also found that the voids started to form on the surface of the film at an annealing temperature of 650 .deg. C and that their areas increased with increasing in annealing temperature. The void formation was found to depend on the time period of pyrolysis and on the pre-annealing process between pyrolysis and final annealing. Dense PMN-PT films with relatively high amounts of the perovskite phase were obtained when additional pre-annealing at 750 .deg. C for 5 min was performed.

  19. Room Temperature Optical Constants and Band Gap Evolution of Phase Pure M1-VO2 Thin Films Deposited at Different Oxygen Partial Pressures by Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Meng Jiang

    2014-01-01

    Full Text Available Spectroscopic ellipsometry study was employed for phase pure VO2(M1 thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO2(M1 thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1 thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge (E1 at varied O2-Ar ratios are almost the same (~2.0 eV; consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition (E2 decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.

  20. Broader color gamut of color-modulating optical coating display based on indium tin oxide and phase change materials.

    Science.gov (United States)

    Ni, Zhigang; Mou, Shenghong; Zhou, Tong; Cheng, Zhiyuan

    2018-05-01

    A color-modulating optical coating display based on phase change materials (PCM) and indium tin oxide (ITO) is fabricated and analyzed. We demonstrate that altering the thickness of top-ITO in this PCM-based display device can effectively change color. The significant role of the top-ITO layer in the thin-film interference in this multilayer system is confirmed by experiment as well as simulation. The ternary-color modulation of devices with only 5 nano thin layer of phase change material is achieved. Furthermore, simulation work demonstrates that a stirringly broader color gamut can be obtained by introducing the control of the top-ITO thickness.

  1. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  2. Coarsening and pattern formation during true morphological phase separation in unstable thin films under gravity

    Science.gov (United States)

    Kumar, Avanish; Narayanam, Chaitanya; Khanna, Rajesh; Puri, Sanjay

    2017-12-01

    We address in detail the problem of true morphological phase separation (MPS) in three-dimensional or (2 +1 )-dimensional unstable thin liquid films (>100 nm) under the influence of gravity. The free-energy functionals of these films are asymmetric and show two points of common tangency, which facilitates the formation of two equilibrium phases. Three distinct patterns formed by relative preponderance of these phases are clearly identified in "true MPS". Asymmetricity induces two different pathways of pattern formation, viz., defect and direct pathway for true MPS. The pattern formation and phase-ordering dynamics have been studied using statistical measures such as structure factor, correlation function, and growth laws. In the late stage of coarsening, the system reaches into a scaling regime for both pathways, and the characteristic domain size follows the Lifshitz-Slyozov growth law [L (t ) ˜t1 /3] . However, for the defect pathway, there is a crossover of domain growth behavior from L (t ) ˜t1 /4→t1 /3 in the dynamical scaling regime. We also underline the analogies and differences behind the mechanisms of MPS and true MPS in thin liquid films and generic spinodal phase separation in binary mixtures.

  3. In-situ investigation of the icosahedral Al-Cu-Fe phase formation in thin films

    Energy Technology Data Exchange (ETDEWEB)

    Haidara, F., E-mail: fanta.haidara@im2np.fr [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France); Duployer, B. [Universite Paul Sabatier CIRIMAT-LCMIE 2R1, 118, Route de Narbonne, 31062 Toulouse Cedex 09 (France); Mangelinck, D.; Record, M.-C. [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France)

    2012-09-05

    Highlights: Black-Right-Pointing-Pointer We investigated the phase formation of i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} in thin films. Black-Right-Pointing-Pointer We characterized the samples by DSC and in-situ XRD and resistance measurements. Black-Right-Pointing-Pointer The resistivity value for i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} was determined. - Abstract: This work is an investigation of the formation by reactive diffusion at high temperatures of the icosahedral phase, i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}, in thin films. The samples were prepared by sputtering at room temperature. The elements Al, Cu and Fe were sequentially deposited onto oxidized silicon substrates. The two following stacking sequences, Al/Cu/Fe and Al/Fe/Cu, were investigated. The phase formation was studied using in situ resistivity, in situ X-ray Diffraction and Differential Scanning Calorimetry measurements. Whatever the stacking sequence, the sequences of phase formation evidenced during the heating treatment are similar. However the temperatures of formation for the first phases that are formed are different; they are higher in the case of the Al/Fe/Cu stacking sequence.

  4. The Mobile Phase Motion in Ascending Micellar Thin-Layer Chromatography with Normal-Phase Plates

    NARCIS (Netherlands)

    Boichenko, Alexander P.; Makhno, Iryna V.; Renkevich, Anton Yu.; Loginova, Lidia P.

    2011-01-01

    The physical chemical characteristics (surface tension and viscosity) of micellar mobile phases based on the cationic surfactant cetylpiridinium chloride and additives of alcohols (ethanol, 1-propanol, 1-butanol, 1-pentanol) have been obtained in this work. The effect of mobile phase properties on

  5. Reversed-phase thin-layer chromatography behavior of aldopentose derivatives

    Directory of Open Access Journals (Sweden)

    Malbaša Radomir V.

    2012-01-01

    Full Text Available Quantitative structure-retention relationships (QSRR have been used to study the chromatographic behavior of some aldopentose. The behavior of aldopentose derivatives was investigated by means of the reversed-phase thin-layer chromatography (RP TLC on the silica gel impregnated with paraffin oil stationary phases. Binary mixtures of methanol-water, acetone-water and dioxane-water were used as mobile phases. Retention factors, RM0, corresponding to zero percent organic modifier in the aqueous mobile phase was determined. Lipophilicity C0 was calculated as the ratio of the intercept and slope values. There was satisfactory correlation between them and log P values calculated using different theoretical procedures. Some of these correlations offer very good predicting models, which are important for a better understanding of the relationships between chemical structure and retention. The study showed that the hydrophobic parameters RM0 and C0 can be used as a measures of lipophilicity of investigated compounds.

  6. Transient phases during fast crystallization of organic thin films from solution

    Science.gov (United States)

    Wan, Jing; Li, Yang; Ulbrandt, Jeffrey G.; Smilgies, Detlef-M.; Hollin, Jonathan; Whalley, Adam C.; Headrick, Randall L.

    2016-01-01

    We report an in situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to ≈93 °C. The layered smectic liquid-crystalline phase of C8-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature >60 °C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s), mobility up to 3.0 cm2/V-s has been observed.

  7. Transient phases during fast crystallization of organic thin films from solution

    Directory of Open Access Journals (Sweden)

    Jing Wan

    2016-01-01

    Full Text Available We report an in situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to ≈93 °C. The layered smectic liquid-crystalline phase of C8-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature >60 °C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s, mobility up to 3.0 cm2/V-s has been observed.

  8. Dry powder mixes comprising phase change materials

    Science.gov (United States)

    Salyer, Ival O.

    1992-01-01

    Free flowing, conformable powder-like mix of silica particles and a phase change material (p.c.m.) is disclosed. The silica particles have a critical size of about 7.times.10.sup.-3 to about 7.times.10.sup.-2 microns and the pcm must be added to the silica in an amount of 80 wt. % or less pcm per combined weight of silica and pcm. The powder-like mix can be used in tableware items, medical wraps, tree wraps, garments, quilts and blankets, and in cementitious compositions of the type in which it is beneficial to use a pcm material. The silica-pcm mix can also be admixed with soil to provide a soil warming effect and placed about a tree, flower, or shrub.

  9. Dry powder mixes comprising phase change materials

    Science.gov (United States)

    Salyer, I.O.

    1994-02-01

    Free flowing, conformable powder-like mix of silica particles and a phase change material (PCM) is provided. The silica particles have a critical size of about 0.005 to about 0.025 microns and the PCM must be added to the silica in an amount of 75% or less PCM per combined weight of silica and PCM. The powder-like mix can be used in tableware items, medical wraps, tree wraps, garments, quilts and blankets, and in cementitious compositions of the type in which it is beneficial to use a PCM material. The silica-PCM mix can also be admixed with soil to provide a soil warming effect and placed about a tree, flower, or shrub. 2 figures.

  10. Projected phase-change memory devices.

    Science.gov (United States)

    Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

    2015-09-03

    Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

  11. The liquid phase epitaxy method for the construction of oriented ZIF-8 thin films with controlled growth on functionalized surfaces

    KAUST Repository

    Shekhah, Osama; Eddaoudi, Mohamed

    2013-01-01

    Highly-oriented ZIF-8 thin films with controllable thickness were grown on an -OH-functionalized Au substrate using the liquid phase epitaxy method at room temperature, as evidenced by SEM and PXRD. The adsorption-desorption properties of the resulting ZIF-8 thin film were investigated for various VOCs using the QCM technique. © The Royal Society of Chemistry 2013.

  12. Intermediate phase evolution in YBCO thin films grown by the TFA process

    International Nuclear Information System (INIS)

    Zalamova, K; Pomar, A; Palau, A; Puig, T; Obradors, X

    2010-01-01

    The YBCO thin film growth process from TFA precursors involves a complex reaction path which includes several oxide, fluoride and oxyfluoride intermediate phases, and the final microstructure and properties of the films are strongly influenced by the morphological and chemical evolution of these intermediate phases. In this work we present a study of the evolution of the intermediate phases involved in the TFA YBCO growth process under normal pressure conditions and we show that the oxygen partial pressure during pyrolysis of the TFA precursors is an important parameter. The Cu phase after the TFA pyrolysis can be either CuO, Cu 2 O or a mixture of both as the oxygen partial pressure is modified. The kinetics evolution of the intermediate phases has been determined for films pyrolysed in oxygen and nitrogen atmospheres and it is concluded that non-equilibrium phase transformations influence the reaction path towards epitaxial YBCO films and its microstructure. The intermediate phase evolution in these two series of films is summarized in kinetic phase diagrams.

  13. Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

    Science.gov (United States)

    Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

    2018-03-01

    It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

  14. Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

    Directory of Open Access Journals (Sweden)

    Rachana Gupta

    2015-09-01

    Full Text Available Cobalt nitride (Co-N thin films prepared using a reactive magnetron sputtering process are studied in this work. During the thin film deposition process, the relative nitrogen gas flow (RN2 was varied. As RN2 increases, Co(N, Co4N, Co3N and CoN phases are formed. An incremental increase in RN2, after emergence of Co4N phase at RN2 = 10%, results in a linear increase of the lattice constant (a of Co4N. For RN2 = 30%, a maximizes and becomes comparable to its theoretical value. An expansion in a of Co4N, results in an enhancement of the magnetic moment, to the extent that it becomes even larger than pure Co. Such larger than pure metal magnetic moment for tetra-metal nitrides (M4N have been theoretically predicted. Incorporation of N atoms in M4N configuration results in an expansion of a (relative to pure metal and enhances the itinerary of conduction band electrons leading to larger than pure metal magnetic moment for M4N compounds. Though a higher (than pure Fe magnetic moment for Fe4N thin films has been evidenced experimentally, higher (than pure Co magnetic moment is evidenced in this work.

  15. Phase change material thermal capacitor clothing

    Science.gov (United States)

    Buckley, Theresa M. (Inventor)

    2005-01-01

    An apparatus and method for metabolic cooling and insulation of a user in a cold environment. In its preferred embodiment the apparatus is a highly flexible composite material having a flexible matrix containing a phase change thermal storage material. The apparatus can be made to heat or cool the body or to act as a thermal buffer to protect the wearer from changing environmental conditions. The apparatus may also include an external thermal insulation layer and/or an internal thermal control layer to regulate the rate of heat exchange between the composite and the skin of the wearer. Other embodiments of the apparatus also provide 1) a path for evaporation or direct absorption of perspiration from the skin of the wearer for improved comfort and thermal control, 2) heat conductive pathways within the material for thermal equalization, 3) surface treatments for improved absorption or rejection of heat by the material, and 4) means for quickly regenerating the thermal storage capacity for reuse of the material. Applications of the composite materials are also described which take advantage of the composite's thermal characteristics. The examples described include a diver's wet suit, ski boot liners, thermal socks, gloves and a face mask for cold weather activities, and a metabolic heating or cooling blanket useful for treating hypothermia or fever patients in a medical setting and therapeutic heating or cooling orthopedic joint supports.

  16. Stoichiometrical trends in differential scanning calorimetry measurements on phase-change materials

    Energy Technology Data Exchange (ETDEWEB)

    Klein, Michael; Linn, Malte; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University, Aachen (Germany)

    2009-07-01

    Phase-change materials are alloys which can be rapidly switched between two metastable states, the amorphous and the crystalline phase. At the same time they show pronounced contrast in their electrical and optical properties. They are widely used as the functional layer in rewritable optical discs. Prototypes of electrical devices employing phase change materials as non-volatile memory are already entering the market. Here we present calorimetric measurements, mainly on ternary Ge-Sb-Te alloys. Scratched-off thin film samples were heated in a differential scanning calorimeter to measure the transition from as-deposited amorphous to metastable crystalline phase and finally to the stable crystalline phase. The different transition temperatures will be analysed as a function of stoichiometry in order to improve the understanding of their interconnection.

  17. Monitoring the thinning dynamics of soap films by phase shift interferometry. The case of perfluoropolyether surfactants.

    Science.gov (United States)

    Gambi, Cecilia M C; Vannoni, Maurizio; Sordini, Andrea; Molesini, Giuseppe

    2014-02-01

    An interferometric method to monitor the thinning process of vertical soap films from a water solution of surfactant materials is reported. Raw data maps of optical path difference introduced by the film are obtained by conventional phase shift interferometry. Off-line re-processing of such raw data taking into account the layered structure of soap films leads to an accurate measurement of the geometrical thickness. As an example of data acquisition and processing, the measuring chain is demonstrated on perfluoropolyether surfactants; the section profile of vertical films is monitored from drawing to black film state, and quantitative data on the dynamics of the thinning process are presented. The interferometric method proves effective to the task, and lends itself to further investigate the physical properties of soap films.

  18. A self-resetting spiking phase-change neuron

    Science.gov (United States)

    Cobley, R. A.; Hayat, H.; Wright, C. D.

    2018-05-01

    Neuromorphic, or brain-inspired, computing applications of phase-change devices have to date concentrated primarily on the implementation of phase-change synapses. However, the so-called accumulation mode of operation inherent in phase-change materials and devices can also be used to mimic the integrative properties of a biological neuron. Here we demonstrate, using physical modelling of nanoscale devices and SPICE modelling of associated circuits, that a single phase-change memory cell integrated into a comparator type circuit can deliver a basic hardware mimic of an integrate-and-fire spiking neuron with self-resetting capabilities. Such phase-change neurons, in combination with phase-change synapses, can potentially open a new route for the realisation of all-phase-change neuromorphic computing.

  19. A self-resetting spiking phase-change neuron.

    Science.gov (United States)

    Cobley, R A; Hayat, H; Wright, C D

    2018-05-11

    Neuromorphic, or brain-inspired, computing applications of phase-change devices have to date concentrated primarily on the implementation of phase-change synapses. However, the so-called accumulation mode of operation inherent in phase-change materials and devices can also be used to mimic the integrative properties of a biological neuron. Here we demonstrate, using physical modelling of nanoscale devices and SPICE modelling of associated circuits, that a single phase-change memory cell integrated into a comparator type circuit can deliver a basic hardware mimic of an integrate-and-fire spiking neuron with self-resetting capabilities. Such phase-change neurons, in combination with phase-change synapses, can potentially open a new route for the realisation of all-phase-change neuromorphic computing.

  20. Synthesis of single phase of CuTl-1234 thin films

    CERN Document Server

    Khan, N A; Ishida, K; Tateai, F; Kojima, T; Terada, N; Ihara, H

    1999-01-01

    Thin films of CuTl-1234 superconductor have been prepared for the first time using an amorphous phase epitaxy method (APE). In this method, an amorphous phase is sputtered from a target of stoichiometric composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub x/. Thin films on the SrTiO/sub 3/ substrate after the thallium treatment are biaxially oriented. The XRD reflected a predominant single phase with c-axis 18.7 AA and pole figure measurements of (103) reflections showed a-axis oriented films with Delta phi =0.8 degrees . Resistivity measurements showed T/sub c/=113 K and preliminary J/sub c/ measurements manifested a current density of 1.0*10/sup 6/ A/cm (77 K, 0 T). The composition of films after EDX measurements is Cu /sub 0.3/Tl/sub 0.7/CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. (8 refs).

  1. Phase Change Material Heat Exchanger Life Test

    Science.gov (United States)

    Lillibridge, Sean; Stephan, Ryan

    2009-01-01

    Low Lunar Orbit (LLO) poses unique thermal challenges for the orbiting space craft, particularly regarding the performance of the radiators. The IR environment of the space craft varies drastically from the light side to the dark side of the moon. The result is a situation where a radiator sized for the maximal heat load in the most adverse situation is subject to freezing on the dark side of the orbit. One solution to this problem is to implement Phase Change Material (PCM) Heat Exchangers. PCM Heat Exchangers act as a "thermal capacitor," storing thermal energy when there is too much being produced by the space craft to reject to space, and then feeding that energy back into the thermal loop when conditions are more favorable. Because they do not use an expendable resource, such as the feed water used by sublimators and evaporators, PCM Heat Exchangers are ideal for long duration LLO missions. In order to validate the performance of PCM Heat Exchangers, a life test is being conducted on four n-Pentadecane, carbon filament heat exchangers. Fluid loop performance, repeatability, and measurement of performance degradation over 2500 melt-freeze cycles will be performed.

  2. A Survey of Phase Change Memory Systems

    Institute of Scientific and Technical Information of China (English)

    夏飞; 蒋德钧; 熊劲; 孙凝晖

    2015-01-01

    As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

  3. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    Science.gov (United States)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  4. EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development.

    Science.gov (United States)

    Gaballah, A E H; Nicolosi, P; Ahmed, Nadeem; Jimenez, K; Pettinari, G; Gerardino, A; Zuppella, P

    2018-01-01

    The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.

  5. Relation of nanoscale and macroscopic properties of mixed-phase silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Fejfar, Antonín; Vetushka, Aliaksi; Kalusová, V.; Čertík, Ondřej; Ledinský, Martin; Rezek, Bohuslav; Stuchlík, Jiří; Kočka, Jan

    2010-01-01

    Roč. 207, č. 3 (2010), s. 582-586 ISSN 1862-6300 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100521 Keywords : conductive atomic force microscopy (C-AFM) * mixed phase silicon thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.458, year: 2010 http://dx.doi.org/10.1002/pssa.200982907

  6. Reversed-phase thin-layer chromatography of the rare earth elements

    International Nuclear Information System (INIS)

    Kuroda, R.; Adachi, M.; Oguma, K.

    1988-01-01

    Partition chromatographic behaviour of the rare earth elements on C 18 bonded silica reversed-phase material has been investigated by thin-layer chromatography in methanol - lactate media. The rare earth lactato complexes are distributed and fractionated on bonded silica layers without ion-interaction reagents. The concentration and pH of lactate solution, methanol concentration and temperature have effects on the migration and resolution of the rare earth elements. The partition system is particularly suited to separate adjacent rare earths of middle atomic weight groups, allowing the separation of gadolinium, terbium, dysprosium, holmium, erbium and thulium to be achieved by development to 18 cm distance. (orig.)

  7. Fabrication of Phase-Change Polymer Colloidal Photonic Crystals

    Directory of Open Access Journals (Sweden)

    Tianyi Zhao

    2014-01-01

    Full Text Available This paper presents the preparation of phase-change polymer colloidal photonic crystals (PCs by assembling hollow latex spheres encapsulated with dodecanol for the first time. The monodispersed hollow latex spheres were obtained by phase reversion of monodispersed core-shell latex spheres in the n-hexane, which dissolves the PS core and retains the PMMA/PAA shell. The as-prepared phase-change colloidal PCs show stable phase-change behavior. This fabrication of phase-change colloidal PCs would be significant for PC’s applications in functional coatings and various optic devices.

  8. Effect of Al doping on phase formation and thermal stability of iron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

    2015-11-25

    In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

  9. Modeling of MEMS Mirrors Actuated by Phase-Change Mechanism

    Directory of Open Access Journals (Sweden)

    David Torres

    2017-04-01

    Full Text Available Given the multiple applications for micro-electro-mechanical system (MEMS mirror devices, most of the research efforts are focused on improving device performance in terms of tilting angles, speed, and their integration into larger arrays or systems. The modeling of these devices is crucial for enabling a platform, in particular, by allowing for the future control of such devices. In this paper, we present the modeling of a MEMS mirror structure with four actuators driven by the phase-change of a thin film. The complexity of the device structure and the nonlinear behavior of the actuation mechanism allow for a comprehensive study that encompasses simpler electrothermal designs, thus presenting a general approach that can be adapted to most MEMS mirror designs based on this operation principle. The MEMS mirrors presented in this work are actuated by Joule heating and tested using optical techniques. Mechanical and thermal models including both pitch and roll displacements are developed by combining theoretical analysis (using both numerical and analytical tools with experimental data and subsequently verifying with quasi-static and dynamic experiments.

  10. Application of phase-change materials in memory taxonomy.

    Science.gov (United States)

    Wang, Lei; Tu, Liang; Wen, Jing

    2017-01-01

    Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.

  11. Thin Double-gap RPCs for the Phase-2 Upgrade of the CMS Muon System

    CERN Document Server

    Lee, Kyong Sei

    2017-01-01

    High-sensitive double-gap phenolic Resistive Plate Chambers are studied for the Phase-2 upgrade of the CMS muon system at high pseudorapidity $\\eta$. Whereas the present CMS RPCs have a gas gap thickness of 2 mm, we propose to use thinner gas gaps, which will improve the performance of these RPCs. To validate this proposal, we constructed double-gap RPCs with two different gap thicknesses of 1.2 and 1.4 mm using high-pressure laminated plates having a mean resistivity of about 5 $\\times$ 10$^{10}$ $\\Omega$-cm. This paper presents test results using cosmic muons and $^{137}$Cs gamma rays. The rate capabilities of these thin-gap RPCs measured with the gamma source exceed the maximum rate expected in the new high-$\\eta$ endcap RPCs planned for future Phase-2 runs of LHC.

  12. Controlling phase separation in vanadium dioxide thin films via substrate engineering

    Science.gov (United States)

    Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; Kittiwatanakul, Salinporn; Tung, I.-Cheng; Zhu, Yi; Zhang, Jiawei; Bechtel, Hans A.; Martin, Michael C.; Carr, G. Lawrence; Lu, Jiwei; Wolf, Stuart A.; Wen, Haidan; Tao, Tiger H.; Liu, Mengkun

    2017-10-01

    The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of Ti O2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in V O2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

  13. Morphological analysis of GeTe in inline phase change switches

    Energy Technology Data Exchange (ETDEWEB)

    King, Matthew R., E-mail: matthew.king2@ngc.com [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); El-Hinnawy, Nabil [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Salmon, Mike; Gu, Jitty [Evans Analytical Group, 628 Hutton St., Raleigh, North Carolina 27606 (United States); Wagner, Brian P.; Jones, Evan B.; Howell, Robert S.; Nichols, Doyle T.; Young, Robert M. [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Borodulin, Pavel [Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States); Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2015-09-07

    Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.

  14. Morphological analysis of GeTe in inline phase change switches

    International Nuclear Information System (INIS)

    King, Matthew R.; El-Hinnawy, Nabil; Salmon, Mike; Gu, Jitty; Wagner, Brian P.; Jones, Evan B.; Howell, Robert S.; Nichols, Doyle T.; Young, Robert M.; Borodulin, Pavel

    2015-01-01

    Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented

  15. Photo-induced optical activity in phase-change memory materials.

    Science.gov (United States)

    Borisenko, Konstantin B; Shanmugam, Janaki; Williams, Benjamin A O; Ewart, Paul; Gholipour, Behrad; Hewak, Daniel W; Hussain, Rohanah; Jávorfi, Tamás; Siligardi, Giuliano; Kirkland, Angus I

    2015-03-05

    We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

  16. Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

    Science.gov (United States)

    Rehn, Daniel A.; Li, Yao; Pop, Eric; Reed, Evan J.

    2018-01-01

    Structural phase-change materials are of great importance for applications in information storage devices. Thermally driven structural phase transitions are employed in phase-change memory to achieve lower programming voltages and potentially lower energy consumption than mainstream nonvolatile memory technologies. However, the waste heat generated by such thermal mechanisms is often not optimized, and could present a limiting factor to widespread use. The potential for electrostatically driven structural phase transitions has recently been predicted and subsequently reported in some two-dimensional materials, providing an athermal mechanism to dynamically control properties of these materials in a nonvolatile fashion while achieving potentially lower energy consumption. In this work, we employ DFT-based calculations to make theoretical comparisons of the energy required to drive electrostatically-induced and thermally-induced phase transitions. Determining theoretical limits in monolayer MoTe2 and thin films of Ge2Sb2Te5, we find that the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe2 at room temperature is 9% of the adiabatic lower limit of the thermally driven phase transition in Ge2Sb2Te5. Furthermore, experimentally reported phase change energy consumption of Ge2Sb2Te5 is 100-10,000 times larger than the adiabatic lower limit due to waste heat flow out of the material, leaving the possibility for energy consumption in monolayer MoTe2-based devices to be orders of magnitude smaller than Ge2Sb2Te5-based devices.

  17. Application of phase-change materials in memory taxonomy

    OpenAIRE

    Wang, Lei; Tu, Liang; Wen, Jing

    2017-01-01

    Abstract Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other...

  18. Development of Phase Change Materials for RF Switch Applications

    Science.gov (United States)

    King, Matthew Russell

    For decades chalcogenide-based phase change materials (PCMs) have been reliably implemented in optical storage and digital memory platforms. Owing to the substantial differences in optical and electronic properties between crystalline and amorphous states, device architectures requiring a "1" and "0" or "ON" and "OFF" states are attainable with PCMs if a method for amorphizing and crystallizing the PCM is demonstrated. Taking advantage of more than just the binary nature of PCM electronic properties, recent reports have shown that the near-metallic resistivity of some PCMs allow one to manufacture high performance RF switches and related circuit technologies. One of the more promising RF switch technologies is the Inline Phase Change Switch (IPCS) which utilizes GeTe as the active material. Initial reports show that an electrically isolated, thermally coupled thin film heater can successfully convert GeTe between crystalline and amorphous states, and with proper design an RF figure of merit cutoff frequency (FCO) of 12.5 THz can be achieved. In order to realize such world class performance a significant development effort was undertaken to understand the relationship between fundamental GeTe properties, thin film deposition method and resultant device properties. Deposition pressure was found to be the most important deposition process parameter, as it was found to control Ge:Te ratio, oxygen content, Ar content, film density and surface roughness. Ultimately a first generation deposition process produced GeTe films with a crystalline resistivity of 3 ohm-mum. Upon implementing these films into IPCS devices, post-cycling morphological analysis was undertaken using STEM and related analyses. It was revealed that massive structural changes occur in the GeTe during switching, most notably the formation of an assembly of voids along the device centerline and large GeTe grains on either side of the so-called active region. Restructuring of this variety was tied to

  19. Anomalous phase change characteristics in Fe-Te materials

    International Nuclear Information System (INIS)

    Fu, X. T.; Song, W. D.; Ji, R.; Ho, H. W.; Wang, L.; Hong, M. H.

    2012-01-01

    Phase change materials have become significantly attractive due to its unique characteristics for its extensive applications. In this paper, a kind of phase change material, which consists of Fe and Te components, is developed. The crystallization temperature of the Fe-Te materials is 180 deg. C for Fe 1.19 Te and can be adjusted by the Fe/Te ratio. High-speed phase change in the Fe-Te materials has been demonstrated by nanosecond laser irradiation. Comparing to conventional phase change materials, the Fe-Te materials exhibit an anomalous optical property that has higher reflectivity at amorphous than crystalline state, which is useful for data storage design.

  20. Surface phase separation, dewetting feature size, and crystal morphology in thin films of polystyrene/poly(ε-caprolactone) blend.

    Science.gov (United States)

    Ma, Meng; He, Zhoukun; Li, Yuhan; Chen, Feng; Wang, Ke; Zhang, Qing; Deng, Hua; Fu, Qiang

    2012-12-01

    Thin films of polystyrene (PS)/poly(ε-caprolactone) (PCL) blends were prepared by spin-coating and characterized by tapping mode force microscopy (AFM). Effects of the relative concentration of PS in polymer solution on the surface phase separation and dewetting feature size of the blend films were systematically studied. Due to the coupling of phase separation, dewetting, and crystallization of the blend films with the evaporation of solvent during spin-coating, different size of PS islands decorated with various PCL crystal structures including spherulite-like, flat-on individual lamellae, and flat-on dendritic crystal were obtained in the blend films by changing the film composition. The average distance of PS islands was shown to increase with the relative concentration of PS in casting solution. For a given ratio of PS/PCL, the feature size of PS appeared to increase linearly with the square of PS concentration while the PCL concentration only determined the crystal morphology of the blend films with no influence on the upper PS domain features. This is explained in terms of vertical phase separation and spinodal dewetting of the PS rich layer from the underlying PCL rich layer, leading to the upper PS dewetting process and the underlying PCL crystalline process to be mutually independent. Copyright © 2012 Elsevier Inc. All rights reserved.

  1. Transient phases during crystallization of solution-processed organic thin films

    Science.gov (United States)

    Wan, Jing; Li, Yang; Ulbrandt, Jeffery; Smilgies, Detlef-M.; Hollin, Jonathan; Whalley, Adam; Headrick, Randall

    We report an in-situ study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor thin film deposition from solution via hollow pen writing, which exhibits multiple transient phases during crystallization. Under high writing speed (25 mm/s) the films have an isotropic morphology, although the mobilities range up to 3.0 cm2/V.s. To understand the crystallization in this highly non-equilibrium regime, we employ in-situ microbeam grazing incidence wide-angle X-ray scattering combined with optical video microscopy at different deposition temperatures. A sequence of crystallization was observed in which a layered liquid-crystalline (LC) phase of C8-BTBT precedes inter-layer ordering. For films deposited above 80ºC, a transition from LC phase to a transient crystalline state that we denote as Cr1 occurs after a temperature-dependent incubation time, which is consistent with classical nucleation theory. After an additional ~ 0.5s, Cr1 transforms to the final stable structure Cr2. Based on these results, we demonstrate a method to produce large crystalline grain size and high carrier mobility during high-speed processing by controlling the nucleation rate during the transformation from the LC phase. Nsf DMR-1307017, NSF DMR-1332208.

  2. RF magnetron sputtered La3+-modified PZT thin films: Perovskite phase stabilization and properties

    International Nuclear Information System (INIS)

    Singh, Ravindra; Goel, T.C.; Chandra, Sudhir

    2008-01-01

    In this work, we report the preparation of lanthanum-modified lead zirconate titanate (PLZT) thin films in pure perovskite phase by RF magnetron sputtering. Various deposition parameters such as target-to-substrate spacing, sputtering gas composition, deposition temperature, post-deposition annealing temperature and time have been optimized to obtain PLZT films in pure perovskite phase. The films prepared in pure argon at 100 W RF power without external substrate heating exhibit pure perovskite phase after rapid thermal annealing (RTA) at 700 deg. C for 5 min. The film prepared at 225 deg. C substrate temperature also exhibits pure perovskite phase after RTA at 700 deg. C for 2 min. SIMS depth profile performed on one of the pure perovskite films (RTA at 700 deg. C for 5 min) shows very good stoichiometric uniformity of all elements of PLZT. The surface morphology of the films was examined using SEM and AFM. The dielectric, ferroelectric and electrical properties of the pure perovskite films were also investigated in detail. The remanent polarization for the films annealed at 700 deg. C for 5 and 2 min were found to be 15 and 13.5 μC cm -2 , respectively. Both the films have high DC resistivity of the order of 10 11 Ω cm at the electric field of ∼80 kV cm -1

  3. Crystal growth within a phase change memory cell.

    Science.gov (United States)

    Sebastian, Abu; Le Gallo, Manuel; Krebs, Daniel

    2014-07-07

    In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.

  4. The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

    Science.gov (United States)

    Geenen, F. A.; Solano, E.; Jordan-Sweet, J.; Lavoie, C.; Mocuta, C.; Detavernier, C.

    2018-05-01

    The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases and their preferential orientation with respect to the Si(001) substrate, for both "thin" (i.e., 9 nm) and "ultra-thin" (i.e., 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides' properties, additives of Al, Co, and Pt are also included in this study. Our results show that the first silicide formed is epitaxial θ-Ni2Si, regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. The observed textures of sequential silicides could be linked through texture inheritance. Our study illustrates the nucleation of a new phase drive to reduce the interfacial energy at the silicide-substrate interface as well as at the interface with the silicide which is being consumed for these sub-10 nm thin films.

  5. Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films

    Science.gov (United States)

    Chopade, Prathamesh; Reddy Dugasani, Sreekantha; Reddy Kesama, Mallikarjuna; Yoo, Sanghyun; Gnapareddy, Bramaramba; Lee, Yun Woo; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

    2017-10-01

    We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and single combination of a triple M2+-doped group (Cu2+-Ni2+-Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and triple (Cu2+-Ni2+-Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities.

  6. Phase sensitive molecular dynamics of self-assembly glycolipid thin films: A dielectric spectroscopy investigation

    Science.gov (United States)

    Velayutham, T. S.; Ng, B. K.; Gan, W. C.; Majid, W. H. Abd.; Hashim, R.; Zahid, N. I.; Chaiprapa, Jitrin

    2014-08-01

    Glycolipid, found commonly in membranes, is also a liquid crystal material which can self-assemble without the presence of a solvent. Here, the dielectric and conductivity properties of three synthetic glycolipid thin films in different thermotropic liquid crystal phases were investigated over a frequency and temperature range of (10-2-106 Hz) and (303-463 K), respectively. The observed relaxation processes distinguish between the different phases (smectic A, columnar/hexagonal, and bicontinuous cubic Q) and the glycolipid molecular structures. Large dielectric responses were observed in the columnar and bicontinuous cubic phases of the longer branched alkyl chain glycolipids. Glycolipids with the shortest branched alkyl chain experience the most restricted self-assembly dynamic process over the broad temperature range studied compared to the longer ones. A high frequency dielectric absorption (Process I) was observed in all samples. This is related to the dynamics of the hydrogen bond network from the sugar group. An additional low-frequency mechanism (Process II) with a large dielectric strength was observed due to the internal dynamics of the self-assembly organization. Phase sensitive domain heterogeneity in the bicontinuous cubic phase was related to the diffusion of charge carriers. The microscopic features of charge hopping were modelled using the random walk scheme, and two charge carrier hopping lengths were estimated for two glycolipid systems. For Process I, the hopping length is comparable to the hydrogen bond and is related to the dynamics of the hydrogen bond network. Additionally, that for Process II is comparable to the bilayer spacing, hence confirming that this low-frequency mechanism is associated with the internal dynamics within the phase.

  7. Electric-field-induced monoclinic phase in (Ba,Sr)TiO3 thin film

    International Nuclear Information System (INIS)

    Anokhin, A. S.; Yuzyuk, Yu. I.; Golovko, Yu. I.; Mukhortov, V. M.; El Marssi, M.

    2011-01-01

    We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba 0.8 Sr 0.2 )TiO 3 thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of c domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the E(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.

  8. Probing the electronic structure of Ni–Mn–In–Si based Heusler alloys thin films using magneto-optical spectra in martensitic and austenitic phases

    Energy Technology Data Exchange (ETDEWEB)

    Novikov, A. [Department of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Sokolov, A., E-mail: asokol@unlserve.unl.edu [Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Gan’shina, E.A. [Department of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Quetz, Abdiel; Dubenko, I.S. [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Stadler, S. [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Ali, N. [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Titov, I.S.; Rodionov, I.D. [Department of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Lähderanta, E. [Lappeenranta University of Technology, 53851 (Finland); Zhukov, A. [Dpto. de Física de Materiales, Fac. Químicas, UPV/EHU, 20018 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Granovsky, A.B. [Department of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Sabirianov, R. [Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182 (United States)

    2017-06-15

    Highlights: • Magneto-optical properties of NiMnIn thin films with a magnetostructural transition. • Comparative analysis of magnetic properties in martensitic and austenite phases. • DFT calculations of the MO Kerr effect and site-resolved DOS agree with experiment. • The electronic structure does not change significantly with Martensitic transition. - Abstract: Thin films of Ni{sub 52}Mn{sub 35−x}In{sub 11+x}Si{sub 2} were fabricated by magnetron sputtering on MgO (0 0 1) single crystal substrates. Magnetization as function of temperature for Ni{sub 52}Mn{sub 35}In{sub 11}Si{sub 2} exhibits features consistent with a magnetostructural transition (MST) from an austenitic phase to a martensitic phase, similar to the bulk material. We observed that the martensitic transformation is externally sensitive to small changes in chemical composition and stoichiometry. It has been found that thin films of Ni{sub 52}Mn{sub 34−x}In{sub 11+x}Si{sub 2} with x = 0 and 1 undergo a temperature-induced MST or remain in a stable austenitic phase, respectively. Comparison of magneto-optical transverse Kerr effect spectra obtained at 0.5–4.0 eV in the 35–300 K temperature interval reveal insignificant differences between the martensitic and austenite phases. We found that the field and temperature dependencies of the transverse Kerr effect are quite different from the magnetization behavior, which is attributed to magnetic inhomogeneity across the films. To elucidate the effects of magnetostructural phase transitions on the electronic properties, we performed density functional calculations of the magneto-optical Kerr effect.

  9. Observation of long phase-coherence length in epitaxial La-doped CdO thin films

    Science.gov (United States)

    Yun, Yu; Ma, Yang; Tao, Songsheng; Xing, Wenyu; Chen, Yangyang; Su, Tang; Yuan, Wei; Wei, Jian; Lin, Xi; Niu, Qian; Xie, X. C.; Han, Wei

    2017-12-01

    The search for long electron phase-coherence length, which is the length that an electron can keep its quantum wavelike properties, has attracted considerable interest in the last several decades. Here, we report the long phase-coherence length of ˜3.7 μm in La-doped CdO thin films at 2 K. Systematical investigations of the La doping and the temperature dependences of the electron mobility and the electron phase-coherence length reveal contrasting scattering mechanisms for these two physical properties. Furthermore, these results show that the oxygen vacancies could be the dominant scatters in CdO thin films that break the electron phase coherence, which would shed light on further investigation of phase-coherence properties in oxide materials.

  10. Phase characteristics of rheograms. Original classification of phase-related changes of rheos

    Directory of Open Access Journals (Sweden)

    Mikhail Y. Rudenko

    2014-05-01

    Full Text Available The phase characteristics of a rheogram are described in literature in general only. The existing theory of impedance rheography is based on an analysis of the form of rheogram envelopes, but not on the phase-related processes and their interpretation according to the applicable laws of physics. The aim of the present paper is to describe the phase-related characteristics of a rheogram of the ascending aorta. The method of the heart cycle phase analysis has been used for this purpose. By synchronizing an ECG of the aorta and a rheogram, an analysis of specific changes in the aorta blood filling in each phase is provided. As a result, the phase changes of a rheogram associated with the ECG phase structure are described and tabulated for first time. The author hereof offers his own original classification of the phase-related changes of rheograms.

  11. The single-phase multiferroic oxides: from bulk to thin film

    International Nuclear Information System (INIS)

    Prellier, W; Singh, M P; Murugavel, P

    2005-01-01

    Complex perovskite oxides exhibit a rich spectrum of properties, including magnetism, ferroelectricity, strongly correlated electron behaviour, superconductivity and magnetoresistance, which have been research areas of great interest among the scientific and technological community for decades. There exist very few materials which exhibit multiple functional properties; one such class of materials is called the multiferroics. Multiferroics are interesting because they exhibit simultaneously ferromagnetic and ferroelectric polarizations and a coupling between them. Due to the nontrivial lattice coupling between the magnetic and electronic domains (the magnetoelectric effect), the magnetic polarization can be switched by applying an electric field; likewise the ferroelectric polarization can be switched by applying a magnetic field. As a consequence, multiferroics offer rich physics and novel devices concepts, which have recently become of great interest to researchers. In this review article the recent experimental status, for both the bulk single phase and the thin film form, has been presented. Current studies on the ceramic compounds in the bulk form including Bi(Fe,Mn)O 3 , REMnO 3 and the series of REMn 2 O 5 single crystals (RE = rare earth) are discussed in the first section and a detailed overview on multiferroic thin films grown artificially (multilayers and nanocomposites) is presented in the second section. (topical review)

  12. Investigations of effect of phase change mass transfer rate on cavitation process with homogeneous relaxation model

    Energy Technology Data Exchange (ETDEWEB)

    He, Zhixia; Zhang, Liang; Saha, Kaushik; Som, Sibendu; Duan, Lian; Wang, Qian

    2017-12-01

    The super high fuel injection pressure and micro size of nozzle orifice has been an important development trend for the fuel injection system. Accordingly, cavitation transient process, fuel compressibility, amount of noncondensable gas in the fuel and cavitation erosion have attracted more attention. Based on the fact of cavitation in itself is a kind of thermodynamic phase change process, this paper takes the perspective of the cavitation phase change mass transfer process to analyze above mentioned phenomenon. The two-phase cavitating turbulent flow simulations with VOF approach coupled with HRM cavitation model and U-RANS of standard k-ε turbulence model were performed for investigations of cavitation phase change mass transfer process. It is concluded the mass transfer time scale coefficient in the Homogenous Relaxation Model (HRM) representing mass transfer rate should tend to be as small as possible in a condition that ensured the solver stable. At very fast mass transfer rate, the phase change occurs at very thin interface between liquid and vapor phase and condensation occurs more focused and then will contribute predictably to a more serious cavitation erosion. Both the initial non-condensable gas in fuel and the fuel compressibility can accelerate the cavitation mass transfer process.

  13. Phase change memory based on SnSe{sub 4} alloy

    Energy Technology Data Exchange (ETDEWEB)

    Karanja, J.M.; Karimi, P.M.; Njoroge, W.K. [Physics Department, Kenyatta University, P.O. Box 43844, Nairobi (Kenya); Wamwangi, D.M., E-mail: Daniel.Wamwangi@wits.ac.za [School of Physics, University of the Witwatersrand, Private Bag 3, 2050 (South Africa)

    2013-01-01

    A phase change alloy has been synthesized and characterized. The reversible phase transitions between amorphous and crystalline states of SnSe{sub 4} films have been studied using variable electrical pulses and X-ray diffraction. Temperature dependent sheet resistance measurements have shown two distinct resistivity states of more than two orders of magnitude. This high electrical contrast makes the alloy suitable for nonvolatile phase change memory applications. X-ray diffraction has attributed the large electrical contrast to an amorphous–crystalline phase transition. The nonvolatile memory cells have been fabricated using a simple sandwich structure (metal/chalcogenide thin film/metal). A threshold voltage of 3.71 V has been determined for this phase change random access memory cell. Memory switching was initiated using the voltage pulses of 3.71 V, 90 ns, 1.3 V and 26 μs, for the crystallization and amorphization process, respectively. - Highlights: ► Phase transition of SnSe{sub 4} alloys with high set resistivity of 1.43 Ωm ► High transition temperatures of 174 °C ► Transition due to amorphous–crystalline changes ► Threshold switching at a high threshold voltage of 3.71 V.

  14. Phase change materials in non-volatile storage

    OpenAIRE

    Ielmini, Daniele; Lacaita, Andrea L.

    2011-01-01

    After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so s...

  15. Phase-change radiative thermal diode

    OpenAIRE

    Ben-Abdallah, Philippe; Biehs, Svend-Age

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important ap...

  16. Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wang, Ying; Medwal, Rohit; Sehdev, Neeru; Yadian, Boluo; Tan, T.L.; Lee, P.; Talebitaher, A.; Ilyas, Usman; Ramanujan, R.V.; Huang, Yizhong; Rawat, R.S.

    2014-01-01

    The formation of impurity phases in FePt thin films severely degrades its magnetic properties. The X-ray diffraction patterns of FePt thin films, synthesized using pulsed laser deposition (PLD), showed peaks corresponding to impurity phases, resulting in softer magnetic properties. A systematic investigation was carried to determine the factors that might have led to impurity phase formation. The factors include (i) PLD target composition, (ii) substrate material, (iii) annealing parameters such as temperature, duration and ambience and (iv) PLD deposition parameters such as chamber ambience, laser energy fluence and target–substrate distance. Depositions on the different substrates revealed impurity phase formation only on Si substrates. It was found that the target composition, PLD chamber ambience, and annealing ambience were not the factors that caused the impurity phase formation. The annealing temperature and duration influenced the impurity phases, but are not the cause of their formation. A decrease in the laser energy fluence and increase of the target–substrate distance resulted in elimination of the impurity phases and enhancement in the magnetic and structural properties of FePt thin films. The energy of the ablated plasma species, controlled by the laser energy fluence and the target–substrate distance, is found to be the main factor responsible for the formation of the impurity phases.

  17. Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials

    Science.gov (United States)

    Adam, Adam Abdalla Elbashir; Cheng, Xiaomin; Abuelhassan, Hassan H.; Miao, Xiang Shui

    2017-06-01

    Phase-change materials (PCMs) are the most promising candidates to be used as an active media in the universal data storage and spintronic devices, due to their large differences in physical properties of the amorphous-crystalline phase transition behavior. In the present study, the microstructure, magnetic and electrical behaviors of Ge0.94Mn0.06Te thin film were investigated. The crystallographic structure of Ge0.94Mn0.06Te thin film was studied sing X-ray diffractometer (XRD) and High Resolution Transmission Electron Microscope (HR-TEM). The XRD pattern showed that the crystallization structure of the film was rhombohedral phase for GeTe with a preference (202) orientation. The HR-TEM image of the crystalline Ge0.94Mn0.06Te thin film demonstrated that, there were two large crystallites and small amorphous areas. The magnetization as a function of the magnetic field analyses of both amorphous and crystalline states showed the ferromagnetic hysteretic behaviors. Then, the hole carriers concentration of the film was measured and it found to be greater than 1021 cm-3 at room temperature. Moreover, the anomalous of Hall Effect (AHE) was clearly observed for the measuring temperatures 5, 10 and 50 K. The results demonstrated that the magnitude of AHE decreased when the temperature was increasing.

  18. Heat storage system utilizing phase change materials government rights

    Science.gov (United States)

    Salyer, Ival O.

    2000-09-12

    A thermal energy transport and storage system is provided which includes an evaporator containing a mixture of a first phase change material and a silica powder, and a condenser containing a second phase change material. The silica powder/PCM mixture absorbs heat energy from a source such as a solar collector such that the phase change material forms a vapor which is transported from the evaporator to the condenser, where the second phase change material melts and stores the heat energy, then releases the energy to an environmental space via a heat exchanger. The vapor is condensed to a liquid which is transported back to the evaporator. The system allows the repeated transfer of thermal energy using the heat of vaporization and condensation of the phase change material.

  19. Improved photovoltaic performance from inorganic perovskite oxide thin films with mixed crystal phases

    Science.gov (United States)

    Chakrabartty, Joyprokash; Harnagea, Catalin; Celikin, Mert; Rosei, Federico; Nechache, Riad

    2018-05-01

    Inorganic ferroelectric perovskites are attracting attention for the realization of highly stable photovoltaic cells with large open-circuit voltages. However, the power conversion efficiencies of devices have been limited so far. Here, we report a power conversion efficiency of 4.20% under 1 sun illumination from Bi-Mn-O composite thin films with mixed BiMnO3 and BiMn2O5 crystal phases. We show that the photocurrent density and photovoltage mainly develop across grain boundaries and interfaces rather than within the grains. We also experimentally demonstrate that the open-circuit voltage and short-circuit photocurrent measured in the films are tunable by varying the electrical resistance of the device, which in turn is controlled by externally applying voltage pulses. The exploitation of multifunctional properties of composite oxides provides an alternative route towards achieving highly stable, high-efficiency photovoltaic solar energy conversion.

  20. Hall conductivity and the vortex phase in MgB2 thin films

    International Nuclear Information System (INIS)

    Jung, Soon-Gil; Seong, W K; Huh, Ji Young; Lee, T G; Kang, W N; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik

    2007-01-01

    In a MgB 2 thin film superconductor, we have found that Hall conductivity (σ xy ) is described by the sum of two terms, σ xy = C 1 /H+C 3 H, where C 1 and C 3 are independent of the magnetic fields and have positive values. C 1 is observed to be proportional to (1-t) n with n = 4.2, where t is the reduced temperature (T/T c ), and C 3 is weakly dependent on the temperature. These results are consistent with those of the overdoped La 2-x Sr x CuO 4 superconductors. Based on Hall angle data, we obtained a vortex phase diagram with three regions, vortex-solid, crossover, and vortex-liquid regions in the H-T plane

  1. Liquid- and Gas-Phase Diffusion of Ferrocene in Thin Films of Metal-Organic Frameworks

    Directory of Open Access Journals (Sweden)

    Wencai Zhou

    2015-06-01

    Full Text Available The mass transfer of the guest molecules in nanoporous host materials, in particular in metal-organic frameworks (MOFs, is among the crucial features of their applications. By using thin surface-mounted MOF films in combination with a quartz crystal microbalance (QCM, the diffusion of ferrocene vapor and of ethanolic and hexanic ferrocene solution in HKUST-1 was investigated. For the first time, liquid- and gas-phase diffusion in MOFs was compared directly in the identical sample. The diffusion coefficients are in the same order of magnitude (~10−16 m2·s−1, whereas the diffusion coefficient of ferrocene in the empty framework is roughly 3-times smaller than in the MOF which is filled with ethanol or n-hexane.

  2. Liquid- and Gas-Phase Diffusion of Ferrocene in Thin Films of Metal-Organic Frameworks

    Science.gov (United States)

    Zhou, Wencai; Wöll, Christof; Heinke, Lars

    2015-01-01

    The mass transfer of the guest molecules in nanoporous host materials, in particular in metal-organic frameworks (MOFs), is among the crucial features of their applications. By using thin surface-mounted MOF films in combination with a quartz crystal microbalance (QCM), the diffusion of ferrocene vapor and of ethanolic and hexanic ferrocene solution in HKUST-1 was investigated. For the first time, liquid- and gas-phase diffusion in MOFs was compared directly in the identical sample. The diffusion coefficients are in the same order of magnitude (~10−16 m2·s−1), whereas the diffusion coefficient of ferrocene in the empty framework is roughly 3-times smaller than in the MOF which is filled with ethanol or n-hexane.

  3. Optically transparent, mechanically durable, nanostructured superhydrophobic surfaces enabled by spinodally phase-separated glass thin films.

    Science.gov (United States)

    Aytug, Tolga; Simpson, John T; Lupini, Andrew R; Trejo, Rosa M; Jellison, Gerald E; Ivanov, Ilia N; Pennycook, Stephen J; Hillesheim, Daniel A; Winter, Kyle O; Christen, David K; Hunter, Scott R; Haynes, J Allen

    2013-08-09

    We describe the formation and properties of atomically bonded, optical quality, nanostructured thin glass film coatings on glass plates, utilizing phase separation by spinodal decomposition in a sodium borosilicate glass system. Following deposition via magnetron sputtering, thermal processing and differential etching, these coatings are structurally superhydrophilic (i.e., display anti-fogging functionality) and demonstrate robust mechanical properties and superior abrasion resistance. After appropriate chemical surface modification, the surfaces display a stable, non-wetting Cassie-Baxter state and exhibit exceptional superhydrophobic performance, with water droplet contact angles as large as 172°. As an added benefit, in both superhydrophobic and superhydrophilic states these nanostructured surfaces can block ultraviolet radiation and can be engineered to be anti-reflective with broadband and omnidirectional transparency. Thus, the present approach could be tailored toward distinct coatings for numerous markets, such as residential windows, windshields, specialty optics, goggles, electronic and photovoltaic cover glasses, and optical components used throughout the US military.

  4. Dopamine/TiO{sub 2} hybrid thin films prepared by the liquid phase deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez-Tauste, David [Departament de Quimica, Universitat Autonoma de Barcelona, Campus UAB, Edifici Cn, 08290 Cerdanyola del Valles, Barcelona (Spain)], E-mail: davidg@qf.uab.es; Domenech, Xavier [Departament de Quimica, Universitat Autonoma de Barcelona, Campus UAB, Edifici Cn, 08290 Cerdanyola del Valles, Barcelona (Spain); Domingo, Concepcion [Instituto de Ciencia de Materiales (CSIC), Campus UAB, 08290 Cerdanyola del Valles, Barcelona (Spain); Ayllon, Jose A. [Departament de Quimica, Universitat Autonoma de Barcelona, Campus UAB, Edifici Cn, 08290 Cerdanyola del Valles, Barcelona (Spain)

    2008-04-30

    Liquid phase deposition method is applied to one-step production of a hybrid material composed by dopamine(DA) and TiO{sub 2} anatase. An optimized amount of the enediol derivative is added to a fluoride titania precursor aqueous solution in order to entrap this modifier within the growing TiO{sub 2}, yielding a DA/TiO{sub 2} nanocomposite material. Uniform, well-adhered and brown-colored thin films are deposited on indium tin oxide covered glass substrate. The DA/TiO{sub 2} hybrid material has been characterized by infrared spectroscopy, electronic microscopy, X-ray diffraction and UV-vis spectroscopy. The formation of the hybrid material seems to be reasonably explained by linkage of different TiO{sub 2} nanocrystallites taking advantage of both enediol and amine groups of DA.

  5. Optically transparent, mechanically durable, nanostructured superhydrophobic surfaces enabled by spinodally phase-separated glass thin films

    Science.gov (United States)

    Aytug, Tolga; Simpson, John T.; Lupini, Andrew R.; Trejo, Rosa M.; Jellison, Gerald E.; Ivanov, Ilia N.; Pennycook, Stephen J.; Hillesheim, Daniel A.; Winter, Kyle O.; Christen, David K.; Hunter, Scott R.; Haynes, J. Allen

    2013-08-01

    We describe the formation and properties of atomically bonded, optical quality, nanostructured thin glass film coatings on glass plates, utilizing phase separation by spinodal decomposition in a sodium borosilicate glass system. Following deposition via magnetron sputtering, thermal processing and differential etching, these coatings are structurally superhydrophilic (i.e., display anti-fogging functionality) and demonstrate robust mechanical properties and superior abrasion resistance. After appropriate chemical surface modification, the surfaces display a stable, non-wetting Cassie-Baxter state and exhibit exceptional superhydrophobic performance, with water droplet contact angles as large as 172°. As an added benefit, in both superhydrophobic and superhydrophilic states these nanostructured surfaces can block ultraviolet radiation and can be engineered to be anti-reflective with broadband and omnidirectional transparency. Thus, the present approach could be tailored toward distinct coatings for numerous markets, such as residential windows, windshields, specialty optics, goggles, electronic and photovoltaic cover glasses, and optical components used throughout the US military.

  6. Optically transparent, mechanically durable, nanostructured superhydrophobic surfaces enabled by spinodally phase-separated glass thin films

    International Nuclear Information System (INIS)

    Aytug, Tolga; Simpson, John T; Lupini, Andrew R; Trejo, Rosa M; Jellison, Gerald E; Ivanov, Ilia N; Pennycook, Stephen J; Hillesheim, Daniel A; Winter, Kyle O; Christen, David K; Hunter, Scott R; Allen Haynes, J

    2013-01-01

    We describe the formation and properties of atomically bonded, optical quality, nanostructured thin glass film coatings on glass plates, utilizing phase separation by spinodal decomposition in a sodium borosilicate glass system. Following deposition via magnetron sputtering, thermal processing and differential etching, these coatings are structurally superhydrophilic (i.e., display anti-fogging functionality) and demonstrate robust mechanical properties and superior abrasion resistance. After appropriate chemical surface modification, the surfaces display a stable, non-wetting Cassie–Baxter state and exhibit exceptional superhydrophobic performance, with water droplet contact angles as large as 172°. As an added benefit, in both superhydrophobic and superhydrophilic states these nanostructured surfaces can block ultraviolet radiation and can be engineered to be anti-reflective with broadband and omnidirectional transparency. Thus, the present approach could be tailored toward distinct coatings for numerous markets, such as residential windows, windshields, specialty optics, goggles, electronic and photovoltaic cover glasses, and optical components used throughout the US military. (paper)

  7. 500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

    Science.gov (United States)

    Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

    2018-01-01

    In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

  8. A general analytical equation for phase diagrams of an N-layer ferroelectric thin film with two surface layers

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Z X; Teng, B H; Rong, Y H; Lu, X H; Yang, X [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)], E-mail: phytbh@163.com

    2010-03-15

    Within the framework of effective-field theory with correlations, the phase diagrams of an N-layer ferroelectric thin film with two surface layers are studied by the differential operator technique based on the spin-1/2 transverse Ising model. A general analytical equation for the phase diagram of a ferroelectric thin film with arbitrary layer number as well as exchange interactions and transverse fields is derived, and then the effects of exchange interactions and transverse fields on phase diagrams are discussed for an arbitrary layer number N. Meanwhile, the crossover features, from the ferroelectric-dominant phase diagram (FPD) to the paraelectric-dominant phase diagram (PPD), for various parameters of an N-layer ferroelectric thin film with two surface layers are investigated. As a result, an N-independent common intersection point equation is obtained, and the three-dimensional curved surfaces for the crossover values are constructed. In comparison with the usual mean-field approximation, the differential operator technique with correlations reduces to some extent the ferroelectric features of a ferroelectric thin film.

  9. Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Haenel, T.; Lee, K.Y.; Rau, B.; Ruske, F.; Weber, T.; Gall, S.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekulestr. 5, D-12489 Berlin (Germany); Berginski, M.; Huepkes, J. [Institute of Photovoltaics, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

    2009-06-15

    The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 {omega} after 22 h annealing at 600 C and only slightly increases for a 200 s heat treatment at 900 C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 C. (author)

  10. All-optical short pulse translation through cross-phase modulation in a VO₂ thin film.

    Science.gov (United States)

    Fardad, Shima; Das, Susobhan; Salandrino, Alessandro; Breckenfeld, Eric; Kim, Heungsoo; Wu, Judy; Hui, Rongqing

    2016-01-15

    VO2 is a promising material for reconfigurable photonic devices due to the ultrafast changes in electronic and optical properties associated with its dielectric-to-metal phase transition. Based on a fiber-optic, pump-probe setup at 1550 nm wavelength window, and by varying the pump-pulse duration, we show that the material phase transition is primarily caused by the pump-pulse energy. For the first time, we demonstrate that the instantaneous optical phase modulation of probe during pump leading edge can be utilized to create short optical pulses at probe wavelength, through optical frequency discrimination. This circumvents the impact of long recovery time well known for the phase transition of VO2.

  11. Measurement of the dynamic behavior of thin poly(N-isopropylacrylamide) hydrogels and their phase transition temperatures measured using reflectometric interference spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Fuminori [Konica Minolta, INC. (Japan); Akiyama, Yoshikatsu, E-mail: akiyama.yoshikatsu@twmu.ac.jp, E-mail: akiyama.yoshikatsu@abmes.twmu.ac.jp; Kobayashi, Jun [Tokyo Women’s Medical University (TWIns), Institute of Advanced Biomedical Engineering and Science (Japan); Ninomiya, Hidetaka [Konica Minolta, INC. (Japan); Kanazawa, Hideko [Keio University, Faculty of Pharmacy (Japan); Yamato, Masayuki; Okano, Teruo [Tokyo Women’s Medical University (TWIns), Institute of Advanced Biomedical Engineering and Science (Japan)

    2015-03-15

    Temperature-responsive cell culture surfaces prepared by modifying tissue-culture polystyrene with nanoscale poly(N-isopropylacrylamide) (PIPAAm) hydrogels are widely used as intelligent surfaces for the fabrication of various cell sheets that change with temperature. In this work, the characteristics of nanoscale PIPAAm hydrogels were phenomenologically elucidated on the basis of time-dependent surface evaluations under conditions of changing temperature. Because the dynamic characteristics of the nanoscale hydrogel did not exhibit good performance, the nanoscale PIPAAm hydrogel was analyzed by monitoring its temperature-dependent dynamic swelling/deswelling changes using reflectometric interference spectroscopy (RIfS) on an instrument equipped with a microfluidic system. RIfS measurements under ambient atmosphere provided the precise physical thickness of the dry PIPAAm hydrogel (6.7 nm), which agreed with the atomic force microscopy results (6.6 nm). Simulations of the reflectance spectra revealed that changes in the wavelength of the minimum reflectance (Δλ) were attributable to the changes in the refractive index of the thin PIPAAm hydrogel induced by a temperature-dependent volume phase transition. The temperature-dependent Δλ change was used to monitor the swelling/deswelling behavior of the nanoscale PIPAAm hydrogel. In addition, the phase transition temperature of the thin PIPAAm hydrogel under aqueous conditions was also determined to be the inflection point of the plot of the change in Δλ as a function of temperature. The dynamic behavior of a thin PIPAAm hydrogel chemically deposited on a surface was readily analyzed using a new analytical system with RIfS and microfluidic devices.

  12. Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

    Science.gov (United States)

    Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

    2018-02-01

    Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  13. Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

    Directory of Open Access Journals (Sweden)

    Xiaoyu Bi

    2018-02-01

    Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  14. Near-earth Thin Current Sheets and Birkeland Currents during Substorm Growth Phase

    International Nuclear Information System (INIS)

    Sorin Zaharia; Cheng, C.Z.

    2003-01-01

    Two important phenomena observed during the magnetospheric substorm growth phase are modeled: the formation of a near-Earth (|X| ∼ 9 R E ) thin cross-tail current sheet, as well as the equatorward shift of the ionospheric Birkeland currents. Our study is performed by solving the 3-D force-balance equation with realistic boundary conditions and pressure distributions. The results show a cross-tail current sheet with large current (J φ ∼ 10 nA/m 2 ) and very high plasma β (β ∼ 40) between 7 and 10 R E . The obtained region-1 and region-2 Birkeland currents, formed on closed field lines due to pressure gradients, move equatorward and become more intense (J parallel max ∼ 3 (micro)A/m 2 ) compared to quiet times. Both results are in agreement with substorm growth phase observations. Our results also predict that the cross-tail current sheet maps into the ionosphere in the transition region between the region-1 and region-2 currents

  15. Ultrafast photo-induced hidden phases in strained manganite thin films

    Science.gov (United States)

    Zhang, Jingdi; McLeod, A. S.; Zhang, Gu-Feng; Stoica, Vladimir; Jin, Feng; Gu, Mingqiang; Gopalan, Venkatraman; Freeland, John W.; Wu, Wenbin; Rondinelli, James; Wen, Haidan; Basov, D. N.; Averitt, R. D.

    Correlated transition metal oxides (TMOs) are particularly sensitive to external control because of energy degeneracy in a complex energy landscape that promote a plethora of metastable states. However, it remains a grand challenge to actively control and fully explore the rich landscape of TMOs. Dynamic control with pulsed photons can overcome energetic barriers, enabling access to transient or metastable states that are not thermally accessible. In the past, we have demonstrated that mode-selective single-laser-pulse excitation of a strained manganite thin film La2/3Ca1/3MnO3 initiates a persistent phase transition from an emergent antiferromagnetic insulating ground state to a ferromagnetic metallic metastable state. Beyond the photo-induced insulator to metal transition, we recently discovered a new peculiar photo-induced hidden phase, identified by an experimental approach that combines ultrafast pump-probe spectroscopy, THz spectroscopy, X-ray diffraction, cryogenic near-field spectroscopy and SHG probe. This work is funded by the DOE, Office of Science, Office of Basic Energy Science under Award Numbers DE-SC0012375 and DE-SC0012592.

  16. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    Science.gov (United States)

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  17. Phase coexistence in thin liquid films stabilized by colloidal particles: equilibrium and non-equilibrium properties

    International Nuclear Information System (INIS)

    Blawzdziewicz, J.; Wajnryb, E.

    2005-01-01

    Phase equilibria between regions of different thickness in thin liquid films stabilized by colloidal particles are investigated using a quasi-two-dimensional thermodynamic formalism. Appropriate equilibrium conditions for the film tension, normal pressure, and chemical potential of the particles in the film are formulated, and it is shown that the relaxation of these parameters occurs consecutively on three distinct time scales. Film stratification is described quantitatively for a hard-sphere suspension using a Monte-Carlo method to evaluate thermodynamic equations of state. Coexisting phases are determined for systems in constrained- and full-equilibrium states that correspond to different stages of film relaxation. We also evaluated the effective viscosity coefficients for two-dimensional compressional and shear flows of a film and the self and collective mobility coefficients of the stabilizing particles. The hydrodynamic calculations were performed using a multiple-reflection representation of Stokes flow between two free surfaces. In this approach, the particle-laden film is equivalent to a periodic system of spheres with a unit cell that is much smaller in the transverse direction than in the lateral direction. (author)

  18. Probing stress state and phase content in ultra-thin Ta films

    International Nuclear Information System (INIS)

    Whitacre, J.F.; Yalisove, S.M.; Bilello, J.C.; Rek, Z.U.

    1998-01-01

    Ta films 25 angstrom to 200 angstrom in thickness were sputter-deposited using different sputter gas (Ar) pressures and cathode power settings. The average in-plane stresses were determined using double crystal diffraction topography (DCDT). X-ray analysis (using the grazing incidence x-ray scattering (GIXS) geometry) was performed using a synchrotron light source. To study microstructure and phase content, transmission electron microscopy (TEM) and transmission electron diffraction (TED) were used. Well resolved x-ray patterns were collected for all of the films. The DCDT stress data was found to be consistent with stress effects evidence in the GIXS data. In general, residual stress state was not strongly dependent upon Ar pressure. The strongest evidence of amorphous content was found in both x-ray and TED data taken from 25 angstrom thick films deposited using 2mTorr Ar pressure and 460 W cathode power. These results show that it is possible to create and study ultra-thin Ta films which possess a range of residual stresses and phase compositions

  19. Phase behavior of diblock copolymer/star-shaped polymer thin film mixtures.

    Science.gov (United States)

    Zhao, Junnan; Sakellariou, Georgios; Green, Peter F

    2016-05-07

    We investigated the phase behavior of thin film, thickness h≈ 100 nm, mixtures of a polystyrene-b-poly(2-vinylpyridine) (PS-b-P2VP) diblock copolymer with star-shaped polystyrene (SPS) molecules of varying functionalities f, where 4 ≤f≤ 64, and molecular weights per arm Marm. The miscibility of the system and the surface composition varied appreciably with Marm and f. For large values of Marm, regardless of f, the miscibility of the system was qualitatively similar to that of linear chain PS/PS-b-P2VP mixtures - the copolymer chains aggregate to form micelles, each composed of an inner P2VP core and PS corona, which preferentially segregate to the free surface. On the other hand, for large f and small Marm, SPS molecules preferentially resided at the free surface. Moreover, blends containing SPS molecules with the highest values of f and lowest values of Marm were phase separated. These observations are rationalized in terms of competing entropic interactions and the dependence of the surface tension of the star-shaped molecules on Marm and f.

  20. A mechanism of inhibition of phase transitions in nano-grained close-packed Pd thin films

    Czech Academy of Sciences Publication Activity Database

    Hüger, E.; Káňa, Tomáš; Šob, Mojmír

    2010-01-01

    Roč. 34, č. 4 (2010), s. 421-427 ISSN 0364-5916 R&D Projects: GA AV ČR IAA100100920; GA MŠk(CZ) OC10008 Institutional research plan: CEZ:AV0Z20410507 Keywords : phase transformations * thin films * nanocrystalline materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.429, year: 2010

  1. Advanced fabrication method for the preparation of MOF thin films: Liquid-phase epitaxy approach meets spin coating method.

    KAUST Repository

    Chernikova, Valeriya; Shekhah, Osama; Eddaoudi, Mohamed

    2016-01-01

    Here we report a new and advanced method for the fabrication of highly oriented/polycrystalline metal-organic framework (MOF) thin films. Building on the attractive features of the liquid-phase epitaxy (LPE) approach, a facile spin coating method

  2. Synthesis of nanocrystalline TiO2 thin films by liquid phase ...

    Indian Academy of Sciences (India)

    WINTEC

    goes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to .... Figure 6. Photodegradation of IGOR organic dye by a. bare TiO2 thin film and b. ... Meng L-J and Dos Santos M P 1993 Thin Solid Films 226 22.

  3. The Structural Changes of the Sn(y)OX Thin Films Under Influence of Heat Treament

    Science.gov (United States)

    Vong, V.

    2001-04-01

    Composite oxide Sn(y) Ox made by thermal oxidation of the Sn(y)-bimetal thin films, in which y is the doped-materials as well as Sb, Ag or Pd. The Sn(y)-bimetal thin films have been made by evaporation in high vacuum onto NaCl-monocrystall and optical glass substrates. In the work the tin and the doped material (y) were put on two different boats and then both the boats were simultaniously heated to evaporate. The Sn(y)Ox thin films were annealed at the differential temperatures. The structural changes of its have been investigated by using X-ray diffraction and transmission electron microscope.

  4. Polarization selective phase-change nanomodulator.

    Science.gov (United States)

    Appavoo, Kannatassen; Haglund, Richard F

    2014-10-27

    Manipulating optical signals below the diffraction limit is crucial for next-generation data-storage and telecommunication technologies. Although controlling the flow of light around nanoscale waveguides was achieved over a decade ago, modulating optical signals at terahertz frequencies within nanoscale volumes remains a challenge. Since the physics underlying any modulator relies on changes in dielectric properties, the incorporation of strongly electron-correlated materials (SECMs) has been proposed because they can exhibit orders of magnitude changes in electrical and optical properties with modest thermal, electrical or optical trigger signals. Here we demonstrate a hybrid nanomodulator of deep sub-wavelength dimensions with an active volume of only 0.002 µm(3) by spatially confining light on the nanometre length scale using a plasmonic nanostructure while simultaneously controlling the reactive near-field environment at its optical focus with a single, precisely positioned SECM nanostructure. Since the nanomodulator functionality hinges on this near-field electromagnetic interaction, the modulation is also selectively responsive to polarization. This architecture suggests one path for designing reconfigurable optoelectronic building blocks with responses that can be tailored with exquisite precision by varying size, geometry, and the intrinsic materials properties of the hybrid elements.

  5. Thermotropic Phase Transition of Benzodithiophene Copolymer Thin Films and Its Impact on Electrical and Photovoltaic Characteristics

    KAUST Repository

    Ko, Sangwon

    2015-02-24

    © 2015 American Chemical Society. We observed a thermotropic phase transition in poly[3,4-dihexyl thiophene-2,2′:5,6′-benzo[1,2-b:4,5-b′]dithiophene] (PDHBDT) thin films accompanied by a transition from a random orientation to an ordered lamellar phase via a nearly hexagonal lattice upon annealing. We demonstrate the effect of temperature-dependent molecular packing on charge carrier mobility (μ) in organic field-effect transistors (OFETs) and photovoltaic characteristics, such as exciton diffusion length (LD) and power conversion efficiency (PCE), in organic solar cells (OSCs) using PDHBDT. The μ was continuously improved with increasing annealing temperature and PDHBDT films annealed at 270 °C resulted in a maximum μ up to 0.46 cm2/(V s) (μavg = 0.22 cm2/(V s)), which is attributed to the well-ordered lamellar structure with a closer - stacking distance of 3.5 Å as shown by grazing incidence-angle X-ray diffraction (GIXD). On the other hand, PDHBDT films with a random molecular orientation are more effective in photovoltaic devices than films with an ordered hexagonal or lamellar phase based on current-voltage characteristics of PDHBDT/C60 bilayer solar cells. This observation corresponds to an enhanced dark current density (JD) and a decreased LD upon annealing. This study provides insight into the dependence of charge transport and photovoltaic characteristics on molecular packing in polymer semiconductors, which is crucial for the management of charge and energy transport in a range of organic optoelectronic devices.

  6. Design and Construction of an Automatic Three-Phase Change ...

    African Journals Online (AJOL)

    The device can also amplify input voltage as low as 50V a.c to a constant 220V a.c. Furthermore, if no power is sensed, from the three live phases, that is if all the phases are in OFF STATE, the device auto-connect to a power generating plant. Keywords: Power Supply; stabilizer; phase Change-over Switch ...

  7. Thin pentacene layer under pressure

    International Nuclear Information System (INIS)

    Srnanek, R.; Jakabovic, J.; Kovac, J.; Donoval, D.; Dobrocka, E.

    2011-01-01

    Organic semiconductors have got a lot of interest during the last years, due to their usability for organic thin film transistor. Pentacene, C 22 H 14 , is one of leading candidates for this purpose. While we obtain the published data about pressure-induced phase transition only on single crystal of pentacene we present pressure-induced phase transition in pentacene thin layers for the first time. Changes in the pentacene structure, caused by the pressure, were detected by micro-Raman spectroscopy. Applying the defined pressure to the pentacene layer it can be transformed from thin phase to bulk phase. Micro-Raman spectroscopy was found as useful method for detection of changes and phases identification in the pentacene layer induced by mechanical pressure. Such a pressure-induced transformation of pentacene thin layers was observed and identified for the first time. (authors)

  8. Phase Change Material Thermal Power Generator

    Science.gov (United States)

    Jones, Jack A. (Inventor); Chao, Yi (Inventor); Valdez, Thomas I. (Inventor)

    2014-01-01

    An energy producing device, for example a submersible vehicle for descending or ascending to different depths within water or ocean, is disclosed. The vehicle comprises a temperature-responsive material to which a hydraulic fluid is associated. A pressurized storage compartment stores the fluid as soon as the temperature-responsive material changes density. The storage compartment is connected with a hydraulic motor, and a valve allows fluid passage from the storage compartment to the hydraulic motor. An energy storage component, e.g. a battery, is connected with the hydraulic motor and is charged by the hydraulic motor when the hydraulic fluid passes through the hydraulic motor. Upon passage in the hydraulic motor, the fluid is stored in a further storage compartment and is then sent back to the area of the temperature-responsive material.

  9. Phase Change Permeation Technology for Environmental Control & Life Support Systems

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA is evaluating Dutyion™, a phase change permeation membrane technology developed by Design Technology and Irrigation (DTI), for use in future advanced life...

  10. Aging mechanisms in amorphous phase-change materials.

    Science.gov (United States)

    Raty, Jean Yves; Zhang, Wei; Luckas, Jennifer; Chen, Chao; Mazzarello, Riccardo; Bichara, Christophe; Wuttig, Matthias

    2015-06-24

    Aging is a ubiquitous phenomenon in glasses. In the case of phase-change materials, it leads to a drift in the electrical resistance, which hinders the development of ultrahigh density storage devices. Here we elucidate the aging process in amorphous GeTe, a prototypical phase-change material, by advanced numerical simulations, photothermal deflection spectroscopy and impedance spectroscopy experiments. We show that aging is accompanied by a progressive change of the local chemical order towards the crystalline one. Yet, the glass evolves towards a covalent amorphous network with increasing Peierls distortion, whose structural and electronic properties drift away from those of the resonantly bonded crystal. This behaviour sets phase-change materials apart from conventional glass-forming systems, which display the same local structure and bonding in both phases.

  11. Freezing Point Depressions of Phase Change CO2 Solvents

    DEFF Research Database (Denmark)

    Arshad, Muhammad Waseem; Fosbøl, Philip Loldrup; von Solms, Nicolas

    2013-01-01

    Freezing point depressions (FPD) in phase change solvents containing 2-(diethylamino)ethanol (DEEA) and 3-(methylamino)propylamine (MAPA) were measured using a modified Beckmann apparatus. The measurements were performed for the binary aqueous DEEA and MAPA solutions, respectively...

  12. Voltage-Controlled Topotactic Phase Transition in Thin-Film SrCoOx Monitored by In Situ X-ray Diffraction.

    Science.gov (United States)

    Lu, Qiyang; Yildiz, Bilge

    2016-02-10

    Topotactic phase transition of functional oxides induced by changes in oxygen nonstoichiometry can largely alter multiple physical and chemical properties, including electrical conductivity, magnetic state, oxygen diffusivity, and electrocatalytic reactivity. For tuning these properties reversibly, feasible means to control oxygen nonstoichiometry-dependent phase transitions in functional oxides are needed. This paper describes the use of electrochemical potential to induce phase transition in strontium cobaltites, SrCoOx (SCO) between the brownmillerite (BM) phase, SrCoO₂.₅, and the perovskite (P) phase, SrCoO₃₋δ. To monitor the structural evolution of SCO, in situ X-ray diffraction (XRD) was performed on an electrochemical cell having (001) oriented thin-film SrCoOx as the working electrode on a single crystal (001) yttria-stabilized zirconia electrolyte in air. In order to change the effective pO₂ in SCO and trigger the phase transition from BM to P, external electrical biases of up to 200 mV were applied across the SCO film. The phase transition from BM to P phase could be triggered at a bias as low as 30 mV, corresponding to an effective pO₂ of 1 atm at 500 °C. The phase transition was fully reversible and the epitaxial film quality was maintained after reversible phase transitions. These results demonstrate the use of electrical bias to obtain fast and easily accessible switching between different phases as well as distinct physical and chemical properties of functional oxides as exemplified here for SCO.

  13. Controlling the near-field excitation of nano-antennas with phase-change materials.

    Science.gov (United States)

    Kao, Tsung Sheng; Chen, Yi Guo; Hong, Ming Hui

    2013-01-01

    By utilizing the strongly induced plasmon coupling between discrete nano-antennas and quantitatively controlling the crystalline proportions of an underlying Ge2Sb2Te5 (GST) phase-change thin layer, we show that nanoscale light localizations in the immediate proximity of plasmonic nano-antennas can be spatially positioned. Isolated energy hot-spots at a subwavelength scale can be created and adjusted across the landscape of the plasmonic system at a step resolution of λ/20. These findings introduce a new approach for nano-circuitry, bio-assay addressing and imaging applications.

  14. Advanced fabrication method for the preparation of MOF thin films: Liquid-phase epitaxy approach meets spin coating method.

    KAUST Repository

    Chernikova, Valeriya

    2016-07-14

    Here we report a new and advanced method for the fabrication of highly oriented/polycrystalline metal-organic framework (MOF) thin films. Building on the attractive features of the liquid-phase epitaxy (LPE) approach, a facile spin coating method was implemented to generate MOF thin films in a high-throughput fashion. Advantageously, this approach offers a great prospective to cost-effectively construct thin-films with a significantly shortened preparation time and a lessened chemicals and solvents consumption, as compared to the conventional LPE-process. Certainly, this new spin-coating approach has been implemented successfully to construct various MOF thin films, ranging in thickness from a few micrometers down to the nanometer scale, spanning 2-D and 3-D benchmark MOF materials including Cu2(bdc)2•xH2O, Zn2(bdc)2•xH2O, HKUST-1 and ZIF-8. This method was appraised and proved effective on a variety of substrates comprising functionalized gold, silicon, glass, porous stainless steel and aluminum oxide. The facile, high-throughput and cost-effective nature of this approach, coupled with the successful thin film growth and substrate versatility, represents the next generation of methods for MOF thin film fabrication. Thereby paving the way for these unique MOF materials to address a wide range of challenges in the areas of sensing devices and membrane technology.

  15. Organic Phase Change Materials And Their Textile Applications: An Overview

    OpenAIRE

    Sarıer, Nihal; Önder, Emel

    2012-01-01

    An organic phase change material (PCM) possesses the ability to absorb and release large quantity of latent heat during a phase change process over a certain temperature range. The use of PCMs in energy storage and thermal insulation has been tested scientifically and industrially in many applications. The broad based research and development studies concentrating on the characteristics of known organic PCMs and new materials as PCM candidates, the storage methods of PCMs, as well as the reso...

  16. Phase change materials in energy sector - applications and material requirements

    Science.gov (United States)

    Kuta, Marta; Wójcik, Tadeusz M.

    2015-05-01

    Phase change materials (PCMs) have been applying in many areas. One of them is energy field. PCMs are interesting for the energy sector because their use enables thermal stabilization and storage of large amount of heat. It is major issue for safety of electronic devices, thermal control of buildings and vehicles, solar power and many others energy domains. This paper contains preliminary results of research on solid-solid phase change materials designed for thermal stabilisation of electronic devices.

  17. Rheological and thermal properties of suspensions of microcapsules containing phase change materials.

    Science.gov (United States)

    Cao, Vinh Duy; Salas-Bringas, Carlos; Schüller, Reidar Barfod; Szczotok, Anna M; Hiorth, Marianne; Carmona, Manuel; Rodriguez, Juan F; Kjøniksen, Anna-Lena

    2018-01-01

    The thermal and rheological properties of suspensions of microencapsulated phase change materials (MPCM) in glycerol were investigated. When the microcapsule concentration is raised, the heat storage capacity of the suspensions becomes higher and a slight decline in the thermal conductivity of the suspensions is observed. The temperature-dependent shear-thinning behaviour of the suspensions was found to be strongly affected by non-encapsulated phase change materials (PCM). Accordingly, the rheological properties of the MPCM suspensions could be described by the Cross model below the PCM melting point while a power law model best described the data above the PCM melting point. The MPCM suspensions are interesting for energy storage and heat transfer applications. However, the non-encapsulated PCM contributes to the agglomeration of the microcapsules, which can lead to higher pumping consumption and clogging of piping systems.

  18. Recent Advances on Neuromorphic Systems Using Phase-Change Materials

    Science.gov (United States)

    Wang, Lei; Lu, Shu-Ren; Wen, Jing

    2017-05-01

    Realization of brain-like computer has always been human's ultimate dream. Today, the possibility of having this dream come true has been significantly boosted due to the advent of several emerging non-volatile memory devices. Within these innovative technologies, phase-change memory device has been commonly regarded as the most promising candidate to imitate the biological brain, owing to its excellent scalability, fast switching speed, and low energy consumption. In this context, a detailed review concerning the physical principles of the neuromorphic circuit using phase-change materials as well as a comprehensive introduction of the currently available phase-change neuromorphic prototypes becomes imperative for scientists to continuously progress the technology of artificial neural networks. In this paper, we first present the biological mechanism of human brain, followed by a brief discussion about physical properties of phase-change materials that recently receive a widespread application on non-volatile memory field. We then survey recent research on different types of neuromorphic circuits using phase-change materials in terms of their respective geometrical architecture and physical schemes to reproduce the biological events of human brain, in particular for spike-time-dependent plasticity. The relevant virtues and limitations of these devices are also evaluated. Finally, the future prospect of the neuromorphic circuit based on phase-change technologies is envisioned.

  19. Recent Advances on Neuromorphic Systems Using Phase-Change Materials.

    Science.gov (United States)

    Wang, Lei; Lu, Shu-Ren; Wen, Jing

    2017-12-01

    Realization of brain-like computer has always been human's ultimate dream. Today, the possibility of having this dream come true has been significantly boosted due to the advent of several emerging non-volatile memory devices. Within these innovative technologies, phase-change memory device has been commonly regarded as the most promising candidate to imitate the biological brain, owing to its excellent scalability, fast switching speed, and low energy consumption. In this context, a detailed review concerning the physical principles of the neuromorphic circuit using phase-change materials as well as a comprehensive introduction of the currently available phase-change neuromorphic prototypes becomes imperative for scientists to continuously progress the technology of artificial neural networks. In this paper, we first present the biological mechanism of human brain, followed by a brief discussion about physical properties of phase-change materials that recently receive a widespread application on non-volatile memory field. We then survey recent research on different types of neuromorphic circuits using phase-change materials in terms of their respective geometrical architecture and physical schemes to reproduce the biological events of human brain, in particular for spike-time-dependent plasticity. The relevant virtues and limitations of these devices are also evaluated. Finally, the future prospect of the neuromorphic circuit based on phase-change technologies is envisioned.

  20. Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

    Science.gov (United States)

    Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

    2017-07-01

    We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

  1. Preparation and thermo-optical characteristics of a smart polymer-stabilized liquid crystal thin film based on smectic A–chiral nematic phase transition

    International Nuclear Information System (INIS)

    Sun, Jian; Wang, Huihui; Cao, Hui; Ding, Hangjun; Yang, Zhou; Yang, Huai; Wang, Ling; Xie, Hui; Luo, Xueyao; Xiao, Jiumei

    2014-01-01

    A smart polymer stabilized liquid crystal (PSLC) thin film with temperature-controllable light transmittance was prepared based on a smectic-A (SmA)–chiral nematic (N*) phase transition, and then the effect of the composition and the preparation condition of the PSLC film on its thermo-optical (T-O) characteristics has been investigated in detail. Within the temperature range of the SmA phase, the PSLC shows a strong opaque state due to the focal conic alignment of liquid crystal (LC) molecules, while the film exhibits a transparent state result from the parallel alignment of N* phase LC molecules at a higher temperature. Importantly, the PSLC films with different temperature of phase transition and contrast ratio can be prepared by changing the composition of photo-polymerizable monomer/LC/chiral dopant. According to the competition between the polymerization of the curable monomers and the diffusion of LC molecules, the ultraviolet (UV) curing surrounding temperature and the intensity of UV irradiation play a critical role in tuning the size of the polymer network meshes, which in turn influence the contrast ratio and the switching speed of the film. Our observations are expected to pave the way for preparing smart PSLC thin films for applications in areas of smart windows, thermo-detectors and other information recording devices. (paper)

  2. Phase changes in superaustenitic steels after long-term annealing

    Energy Technology Data Exchange (ETDEWEB)

    Svoboda, M.; Kroupa, A. [Inst. of Physics of Materials, Academy of Sciences of Czech Republic, Brno (Czech Republic); Sopousek, J.; Vrest' al, J. [Inst. of Theoretical and Physical Chemistry, Masaryk Univ., Brno (Czech Republic); Miodownik, P. [Thermotech Ltd, The Surrey Research Park, Guildford (United Kingdom)

    2004-11-01

    A structural study was performed on the austenitic steels Avesta 254 SMO and Avesta 654 SMO after annealing at 700 C for 500, 3188, and 6170 h. Both Avesta steels initially show an unexpectedly large amount of the Laves phase, followed by a relatively slow development of the Sigma phase with equilibrium apparently not yet reached after 3188 h. Thermodynamic calculations confirm that the driving forces for alternative precipitates are very similar thus making it easy to form metastable precipitates that only change very slowly to the equilibrium state. TTT calculations also confirm that the Laves phase precipitates earlier than the Sigma phase as the temperature is lowered. (orig.)

  3. Temperature-dependent phase separation during annealing of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films in vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zheng [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Pan Jisheng, E-mail: js-pan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Fang, Lina Wei-Wei; Yeo, Yee-Chia [Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 119260 (Singapore); Foo, Yong Lim [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Zhao Rong; Shi Luping [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Tok, Eng Soon [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Department of Physics, National University of Singapore (NUS), Singapore 119260 (Singapore)

    2012-06-01

    Thermal stability of 100 nm Ge{sub 2}Sb{sub 2}Te{sub 5} thin film during annealing from room temperature to 240 Degree-Sign C inside a UHV chamber was studied in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD) and atomic force microscopy (AFM). Ge species are found to diffuse preferentially to the surface when GST film is annealed from 25 Degree-Sign C to 100 Degree-Sign C. This process is accompanied by a change of phase whereby the amorphous film completely becomes face-center-cubic (FCC) phase at 100 Degree-Sign C. From 100 Degree-Sign C to 200 Degree-Sign C, both Sb and Te species are observed to diffuse more to the surface. The FCC phase is partially changed into hexagonal-close-pack (HCP) phase at 200 Degree-Sign C. At 220 Degree-Sign C, FCC phase is completely transformed into HCP phase. Loss of Sb and Te are also detected from the surface and this is attributed to desorption due to their high vapor pressures. At 240 Degree-Sign C, Sb and Te species are found to have desorbed completely from the surface, and leave behind Ge-rich 3D droplets on the surface. The separation of Ge{sub 2}Sb{sub 2}Te{sub 5} into Sb,Te-rich phase and Ge-rich phase is thus the main mechanism to account for the failure of Ge{sub 2}Sb{sub 2}Te{sub 5}-based phase change memory devices under thermal stress.

  4. Modeling and impacts of the latent heat of phase change and specific heat for phase change materials

    Science.gov (United States)

    Scoggin, J.; Khan, R. S.; Silva, H.; Gokirmak, A.

    2018-05-01

    We model the latent heats of crystallization and fusion in phase change materials with a unified latent heat of phase change, ensuring energy conservation by coupling the heat of phase change with amorphous and crystalline specific heats. We demonstrate the model with 2-D finite element simulations of Ge2Sb2Te5 and find that the heat of phase change increases local temperature up to 180 K in 300 nm × 300 nm structures during crystallization, significantly impacting grain distributions. We also show in electrothermal simulations of 45 nm confined and 10 nm mushroom cells that the higher amorphous specific heat predicted by this model increases nucleation probability at the end of reset operations. These nuclei can decrease set time, leading to variability, as demonstrated for the mushroom cell.

  5. A phase change processor method for solving a one-dimensional phase change problem with convection boundary

    Energy Technology Data Exchange (ETDEWEB)

    Halawa, E.; Saman, W.; Bruno, F. [Institute for Sustainable Systems and Technologies, School of Advanced Manufacturing and Mechanical Engineering, University of South Australia, Mawson Lakes SA 5095 (Australia)

    2010-08-15

    A simple yet accurate iterative method for solving a one-dimensional phase change problem with convection boundary is described. The one-dimensional model takes into account the variation in the wall temperature along the direction of the flow as well as the sensible heat during preheating/pre-cooling of the phase change material (PCM). The mathematical derivation of convective boundary conditions has been integrated into a phase change processor (PCP) algorithm that solves the liquid fraction and temperature of the nodes. The algorithm is based on the heat balance at each node as it undergoes heating or cooling which inevitably involves phase change. The paper presents the model and its experimental validation. (author)

  6. Structural Changes of PVDF Membranes by Phase Separation Control

    International Nuclear Information System (INIS)

    Lee, Semin; Kim, Sung Soo

    2016-01-01

    Thermally induced phase separation (TIPS) and nonsolvent induced phase separation (NIPS) were simultaneously induced for the preparation of flat PVDF membranes. N-methyl-2-pyrrolidone (NMP) was used as a solvent and dibutyl-phthlate (DBP) was used as a diluent for PVDF. When PVDF was melt blended with NMP and DBP, crystallization temperature was lowered for TIPS and unstable region was expanded for NIPS. Ratio of solvent to diluent changed the phase separation mechanism to obtain the various membrane structures. Contact mode of dope solution with nonsolvent determined the dominant phase separation behavior. Since heat transfer rate was greater than mass transfer rate, surface structure was formed by NIPS and inner structure was by TIPS. Quenching temperature of dope solution also affected the phase separation mechanism and phase separation rate to result in the variation of structure

  7. Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Song Dengyuan; Inns, Daniel; Straub, Axel; Terry, Mason L.; Campbell, Patrick; Aberle, Armin G.

    2006-01-01

    Polycrystalline silicon (poly-Si) thin-films are made on planar and textured glass substrates by solid phase crystallization (SPC) of in situ doped amorphous silicon (a-Si) deposited by electron-beam evaporation. These materials are referred to by us as EVA materials (SPC of evaporated a-Si). The properties of EVA poly-Si films are characterised by Raman microscopy, transmission electron microscopy, and X-ray diffraction. A narrow and symmetrical Raman peak at a wave number of about 520 cm -1 is observed for all samples, showing that the films are fully crystallized. X-ray diffraction (XRD) reveals that the films are preferentially (111)-oriented. Furthermore, the full width at half maximum of the dominant (111) XRD peaks indicates that the structural quality of the films is affected by the a-Si deposition temperature and the surface morphology of the glass substrates. A-Si deposition at 200 instead of 400 deg. C leads to an enhanced poly-Si grain size. On textured glass, the addition of a SiN barrier layer between the glass and the Si improves the poly-Si material quality. No such effect occurs on planar glass. Mesa-type solar cells are made from these EVA films on planar and textured glass. A strong correlation between the cells' current-voltage characteristics and their crystalline material quality is observed

  8. Phase diagram of a thin film of the Fe1−xCox alloy with the “bulk” or “planar” magnetoelastic interaction

    International Nuclear Information System (INIS)

    Fridman, Yu. A.; Klevets, F. N.; Voitenko, A. P.

    2011-01-01

    Concentration-induced reorientation phase transitions in thin magnetic films of FeCo alloys have been investigated taking into account “planar” or “bulk” magnetoelastic interaction. The critical concentrations of Co corresponding to the phase transition points, as well as the types of the phase transitions, have been determined. The phase diagrams have been plotted.

  9. Phase change materials and the perception of wetness

    NARCIS (Netherlands)

    Bergmann Tiest, W.M.; Kosters, N.D.; Kappers, A.M.L.; Daanen, H.A.M.

    2012-01-01

    Phase change materials (PCMs) are increasingly incorporated in textiles in order to serve as a thermal buffer when humans change from a hot to a cold environment and the reverse. Due to the absence of wetness sensors in the skin, cooling of the skin may be perceived as a sensation of wetness instead

  10. Phase Change Materials and the perception of wetness.

    NARCIS (Netherlands)

    Bergmann Tiest, W.M.; Kappers, A.M.L.; Daanen, H.A.M.

    2012-01-01

    Phase change materials (PCMs) are increasingly incorporated in textiles in order to serve as a thermal buffer when humans change from a hot to a cold environment and the reverse. Due to the absence of wetness sensors in the skin, cooling of the skin may be perceived as a sensation of wetness instead

  11. An Energy Based Numerical Approach to Phase Change Problems

    DEFF Research Database (Denmark)

    Hauggaard-Nielsen, Anders Boe; Damkilde, Lars; Krenk, Steen

    1996-01-01

    Phase change problems, occurring e.g. in melting, casting and freezing processes, are often characterized by a very narrow transition zone with very lareg changes in heat capacity and conductivity. This leads to problems in numerical procedures, where the transition zone propagates through a mesh...

  12. miRNA control of vegetative phase change in trees.

    Directory of Open Access Journals (Sweden)

    Jia-Wei Wang

    2011-02-01

    Full Text Available After germination, plants enter juvenile vegetative phase and then transition to an adult vegetative phase before producing reproductive structures. The character and timing of the juvenile-to-adult transition vary widely between species. In annual plants, this transition occurs soon after germination and usually involves relatively minor morphological changes, whereas in trees and other perennial woody plants it occurs after months or years and can involve major changes in shoot architecture. Whether this transition is controlled by the same mechanism in annual and perennial plants is unknown. In the annual forb Arabidopsis thaliana and in maize (Zea mays, vegetative phase change is controlled by the sequential activity of microRNAs miR156 and miR172. miR156 is highly abundant in seedlings and decreases during the juvenile-to-adult transition, while miR172 has an opposite expression pattern. We observed similar changes in the expression of these genes in woody species with highly differentiated, well-characterized juvenile and adult phases (Acacia confusa, Acacia colei, Eucalyptus globulus, Hedera helix, Quercus acutissima, as well as in the tree Populus x canadensis, where vegetative phase change is marked by relatively minor changes in leaf morphology and internode length. Overexpression of miR156 in transgenic P. x canadensis reduced the expression of miR156-targeted SPL genes and miR172, and it drastically prolonged the juvenile phase. Our results indicate that miR156 is an evolutionarily conserved regulator of vegetative phase change in both annual herbaceous plants and perennial trees.

  13. Influence of Si and N additions on structure and phase stability of Ge(2)Sb(2)Te(5) thin films.

    Science.gov (United States)

    Kölpin, Helmut; Music, Denis; Laptyeva, Galyna; Ghadimi, Reza; Merget, Florian; Richter, Silvia; Mykhaylonka, Ruslàn; Mayer, Joachim; Schneider, Jochen M

    2009-10-28

    The influence of Si and N in Ge(2)Sb(2)Te(5) (space group [Formula: see text]) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge(2)Sb(2)Te(5) grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge(2)Sb(2)Te(5) is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge(2)Sb(2)Te(5).

  14. Influence of Si and N additions on structure and phase stability of Ge2Sb2Te5 thin films

    International Nuclear Information System (INIS)

    Koelpin, Helmut; Music, Denis; Mykhaylonka, Ruslan; Schneider, Jochen M; Laptyeva, Galyna; Ghadimi, Reza; Richter, Silvia; Mayer, Joachim; Merget, Florian

    2009-01-01

    The influence of Si and N in Ge 2 Sb 2 Te 5 (space group Fm3-barm) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge 2 Sb 2 Te 5 grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge 2 Sb 2 Te 5 is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge 2 Sb 2 Te 5 .

  15. Thin Film Flat Panel Off-Axis Solar Concentrator with Flux Distribution, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Relatively small concentric thin film FRESNEL lenses and fresnel-like Multiple Parabolic Reflecting Surface (MPRS) reflectors have been successfully produced from...

  16. Thin and Automated Blanket Lamination and Encapsulation Systems (TABLES), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Flexible photovoltaic array technologies require very thin and precisely controlled deposition of the polymeric films used to fabricate them. In most flexible...

  17. Design and Process Development of Thin-Ply Composites, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This project evaluates automated tape placement (ATP) processing of thin ply composites, including process and design modeling, test panel fabrication and mechanical...

  18. Effects of phase change on reflection in phase-measuring interference microscopy

    OpenAIRE

    Dubois , Arnaud

    2004-01-01

    International audience; We show by analytical and numerical calculations that the phase change on reflection that occurs in interference microscopy is almost independent of the numerical aperture of the objective. The shift of the microscope interferogram response due to the phase change on reflection, however, increases with the numerical aperture. Measurements of the interferogram shift are made with a Linnik interference microscope equipped with various numerical-aperture objectives and ar...

  19. Stability of nanosized alloy thin films: Faulting and phase separation in metastable Ni/Cu/Ag-W films

    International Nuclear Information System (INIS)

    Csiszár, G.; Kurz, S.J.B.; Mittemeijer, E.J.

    2016-01-01

    A comparative study of Me(=Ni/Cu/Ag)-based, W-alloyed, nanocrystalline, heavily faulted thin films was carried out to identify parameters stabilizing the nanocrystalline nature upon thermal treatment. The three systems, initially of comparably, heavily twinned (twin boundaries at spacings of 1–5 nm) microstructures showed similarities but also strikingly different behaviours upon annealing, as observed by application of in particular X-ray diffraction (line-broadening) analysis and (high resolution) transmission electron microscopy. During annealing in the range of 30–600 °C, (i) segregation at the planar faults (for Me = Ni) and at grain boundaries (for Me = Ni,Cu,Ag), as well as nanoscale phase separation (for Me = Cu,Ag) take place, (ii) distinct grain growth does not occur and (iii) the twin boundaries either are largely preserved ((Ni(W) and Ag(W)) or disappear totally (Cu(W))), which was ascribed to an altered faulting energy, due to change of the amount of W segregated at the twin boundaries, and to the evolution of nano-precipitates. The nanosized films exhibit very large internal (macro)stresses parallel to the surface, which change during annealing in the range of 1 GPa (tensile) to −3 GPa (compressive) and thus are sensitive to the microstructural changes in the films (decomposition and relaxation) that happen on a nanoscale. The results are discussed in terms of thermodynamic and/or kinetic constraints controlling these processes and thus the thermal stability of the systems concerned.

  20. Color change mechanism of niobium oxide thin film with incidental light angle and applied voltage

    Energy Technology Data Exchange (ETDEWEB)

    Komatsu, Isao [Course of Information Science and Technology, Graduate School of Science and Technology, Tokai University (Japan); Aoki, Hayata [Course of Electro Photo Optics, Graduate School of Engineering, Tokai University (Japan); Ebisawa, Mizue [Tokyo Metropolitan Industrial Technology Research Institute (Japan); Kuroda, Akihiro [Department of Optical and Imaging Science & Technology, Faculty of Engineering, Tokai University (Japan); Kuroda Consulting Incorporated (Japan); Kuroda, Koichi [Kuroda Consulting Incorporated (Japan); Maeda, Shuichi [Course of Information Science and Technology, Graduate School of Science and Technology, Tokai University (Japan); Course of Electro Photo Optics, Graduate School of Engineering, Tokai University (Japan); Department of Optical and Imaging Science & Technology, Faculty of Engineering, Tokai University (Japan)

    2016-03-31

    Niobium oxide thin layers made by the anodization process showed coloration owing to thin film interference. The reflection spectra depended on both the applied voltage and incident light angle. Large color differences were observed at incident light angles between 5° and 70°, when the applied voltage was over 60 V. In this study, we explored the cause of these results using ellipsometry and goniophotometry to understand the transition of optical constants and the reflection spectra with applied voltage. Finally, we concluded that the coloration of the reflection spectra, which included only a first-order interference peak, exhibits a smaller change because the first order interference peak has a wider half value width than higher order interference peaks. - Highlights: • We investigated color change of Nb{sub 2}O{sub 5} oxide thin layers with incidental light angle. • The reflection spectra shift to lower wavelength region with increasing incident light angle. • The reflection spectra shift to higher wavelength region with increasing applied voltage. • First-order interference has wider half value width, and exhibits small color change.

  1. Relation between bandgap and resistance drift in amorphous phase change materials.

    Science.gov (United States)

    Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

    2015-12-01

    Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

  2. Structural and morphological changes in P3HT thin film transistors applying an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Deepak Kumar; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany); Flesch, Heinz; Resel, Roland [University of Siegen (Germany); Graz University of Technology (Austria)

    2010-07-01

    We report on electric field dependent crystalline structure and morphological changes of drop casting and spin coated poly(3-hexylthiophene) (P3HT) thin films. In order to probe the morphological changes induced by an applied electric field the samples were covered with thin source/drain electrodes separated by a small channel of 2 mm width. A series of x-ray reflectivity, X-ray grazing incidence out-of-plane and in-plane scans have been performed as function of the applied electric voltage. The (100) peak shows a decrease in intensity with increase of the applied electric field. This might be caused by Joule heating and the creation of current induced defects in the P3HT film. On other hand the (020) peak intensity shows much stronger changes with applied field. Considering the *-* stacking direction the measured effect can be directly related to a change in the electric transport. The observed changes in structure are reversible and the current-voltage cycle can be repeated several times. For X-ray reflectivity major changes have been found close to critical angle of total external reflection indicating the film becomes less dense and increases in surface roughness with increase of the voltage. This change in surface behaviour could be confirmed by in-situ AFM measurements.

  3. Understanding Phase-Change Memory Alloys from a Chemical Perspective

    Science.gov (United States)

    Kolobov, A. V.; Fons, P.; Tominaga, J.

    2015-09-01

    Phase-change memories (PCM) are associated with reversible ultra-fast low-energy crystal-to-amorphous switching in GeTe-based alloys co-existing with the high stability of the two phases at ambient temperature, a unique property that has been recently explained by the high fragility of the glass-forming liquid phase, where the activation barrier for crystallisation drastically increases as the temperature decreases from the glass-transition to room temperature. At the same time the atomistic dynamics of the phase-change process and the associated changes in the nature of bonding have remained unknown. In this work we demonstrate that key to this behavior is the formation of transient three-center bonds in the excited state that is enabled due to the presence of lone-pair electrons. Our findings additionally reveal previously ignored fundamental similarities between the mechanisms of reversible photoinduced structural changes in chalcogenide glasses and phase-change alloys and offer new insights into the development of efficient PCM materials.

  4. A review on phase change energy storage: materials and applications

    International Nuclear Information System (INIS)

    Farid, Mohammed M.; Khudhair, Amar M.; Razack, Siddique Ali K.; Al-Hallaj, Said

    2004-01-01

    Latent heat storage is one of the most efficient ways of storing thermal energy. Unlike the sensible heat storage method, the latent heat storage method provides much higher storage density, with a smaller temperature difference between storing and releasing heat. This paper reviews previous work on latent heat storage and provides an insight to recent efforts to develop new classes of phase change materials (PCMs) for use in energy storage. Three aspects have been the focus of this review: PCM materials, encapsulation and applications. There are large numbers of phase change materials that melt and solidify at a wide range of temperatures, making them attractive in a number of applications. Paraffin waxes are cheap and have moderate thermal energy storage density but low thermal conductivity and, hence, require large surface area. Hydrated salts have larger energy storage density and higher thermal conductivity but experience supercooling and phase segregation, and hence, their application requires the use of some nucleating and thickening agents. The main advantages of PCM encapsulation are providing large heat transfer area, reduction of the PCMs reactivity towards the outside environment and controlling the changes in volume of the storage materials as phase change occurs. The different applications in which the phase change method of heat storage can be applied are also reviewed in this paper. The problems associated with the application of PCMs with regards to the material and the methods used to contain them are also discussed

  5. State of the art on phase change material slurries

    International Nuclear Information System (INIS)

    Youssef, Ziad; Delahaye, Anthony; Huang Li; Trinquet, François; Fournaison, Laurence; Pollerberg, Clemens; Doetsch, Christian

    2013-01-01

    Highlights: ► A bibliographic study on PCM slurries. ► Clathrate Hydrate slurry, Microencapsulated PCM Slurry, shape-stabilized PCM slurries and Phase Change Material Emulsions. ► Formation, thermo-physical, rheological, heat transfers properties and applications of these four PCS systems. ► The use of thermal energy storage and distribution based on PCM slurries can improve the refrigerating machine performances. - Abstract: The interest in using phase change slurry (PCS) media as thermal storage and heat transfer fluids is increasing and thus leading to an enhancement in the number of articles on the subject. In air-conditioning and refrigeration applications, PCS systems represent a pure benefit resulting in the increase of thermal energy storage capacity, high heat transfer characteristics and positive phase change temperatures which can occur under low pressures. Hence, they allow the increase of energy efficiency and reduce the quantity of thermal fluids. This review describes the formation, thermo-physical, rheological, heat transfer properties and applications of four PCS systems: Clathrate hydrate slurry (CHS), Microencapsulated Phase Change Materials Slurry (MPCMS), shape-stabilized PCM slurries (SPCMSs) and Phase Change Material Emulsions (PCMEs). It regroups a bibliographic summary of important information that can be very helpful when such systems are used. It also gives interesting and valuable insights on the choice of the most suitable PCS media for laboratory and industrial applications.

  6. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    International Nuclear Information System (INIS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-01-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  7. Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr,TiO3 (PZT thin films

    Directory of Open Access Journals (Sweden)

    M. Mtebwa

    2014-12-01

    Full Text Available We report the qualitative study of the influence of both elastic compliances and higher order terms of Landau free energy potential on the phase diagram of Pb(Zr0.5Ti0.5O3 thin films by using a single domain Landau theory. Although the impact of elastic compliances and higher order terms of the Landau free energy potential on the phase diagram of ferroelectric thin films are known, the sensitivity of the phase diagram of PZT thin film on these parameters have not been reported. It is demonstrated that, while values of elastic compliances affect the positions of the phase boundaries including phase transition temperature of the cubic phase; higher order terms can potentially introduce an a1a2-phase previously predicted in PbTiO3 phase diagram.

  8. Phase transitions in thin films of Sn-Sb-Se system

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

    1998-01-01

    The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

  9. Parameterization of phase change of water in a mesoscale model

    Energy Technology Data Exchange (ETDEWEB)

    Levkov, L; Eppel, D; Grassl, H

    1987-01-01

    A parameterization scheme of phase change of water is suggested to be used in the 3-D numerical nonhydrostatic model GESIMA. The microphysical formulation follows the so-called bulk technique. With this procedure the net production rates in the balance equations for water and potential temperature are given both for liquid and ice-phase. Convectively stable as well as convectively unstable mesoscale systems are considered. With 2 figs..

  10. Phase transitions in Fe{sub 0.5}Co{sub 0.5} (110) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez-Dámaso, G., E-mail: gramirezd@ipn.mx [Escuela Superior de Ingeniería y Arquitectura “Unidad Ticomán” del Instituto Politécnico Nacional, Av. Ticomán No. 600, Col. San José Ticomán, Del. G. A. M., C. P. 07330 Ciudad de México (Mexico); Castillo-Alvarado, F.L. [Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, Col. San Pedro Zacatenco, C. P. 07738 Ciudad de México (Mexico); Rojas-Hernández, E. [Escuela Superior de Ingeniería y Arquitectura “Unidad Ticomán” del Instituto Politécnico Nacional, Av. Ticomán No. 600, Col. San José Ticomán, Del. G. A. M., C. P. 07330 Ciudad de México (Mexico)

    2016-12-15

    In this paper, we present calculations for two second-order phase transitions in (110) Fe{sub 0.5}Co{sub 0.5} thin films with 11, 15, and 19 monoatomic layers. The lattice and magnetic transitions are based on thermodynamic equilibrium considerations of the magnetic alloy. The procedure proposed by Valenta and Sukiennicki was applied to calculate the composition x(i), the lattice order parameter t(i), and the magnetic order parameter σ(i) as a function of temperature T. We confirmed that both phase transitions, lattice and magnetic, are of the second order, in accordance with experimental results in the literature. The obtained behavior of these parameters indicates their inhomogeneity due to the boundary conditions on the surfaces of the thin film.

  11. Effect of Se substitution on the phase change properties of Ge2Sb2Te5

    Science.gov (United States)

    Shekhawat, Roopali; Rangappa, Ramanna; Gopal, E. S. R.; Ramesh, K.

    2018-05-01

    Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contrast in electrical resistivity (about 103). The phase change is between amorphous and metastable NaCl structure occurs at about 150°C and not to the stable hexagonal phase which occurs at a high temperature (> 250 °C). In GST, about 50 % of Te substituted by Se (Ge2Sb2Te2.5Se2.5) is found to increase the contrast in electrical resistivity by 7 orders of magnitude (about 4 orders of magnitude higher than GST). The phase transition in Se added GST also found to be between amorphous and the stable hexagonal structure. The threshold voltage at which the Ge2Sb2Te2.5Se2.5 switches to the high conducting state increases to 9V as compared to 2V in GST. Interestingly, the threshold current decrease to 1mA as compared to 1.8mA in GST indicating the Se substitution reduces the power needed for switching between the low and high conducting states. The reduction in power needed for phase change, high contrast in electrical resistivity with high thermal stability makes Ge2Sb2Te2.5Se2.5 as a better candidate for PCRAM.

  12. Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

    Science.gov (United States)

    Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

    2011-07-01

    We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

  13. Uncertainty in project phases: A framework for organisational change management

    DEFF Research Database (Denmark)

    Kreye, Melanie; Balangalibun, Sarah

    2015-01-01

    in the early stage of the change project but was delayed until later phases. Furthermore, the sources of uncertainty were found to be predominantly within the organisation that initiated the change project and connected to the project scope. Based on these findings, propositions for future research are defined......Uncertainty is an integral challenge when managing organisational change projects (OCPs). Current literature highlights the importance of uncertainty; however, falls short of giving insights into the nature of uncertainty and suggestions for managing it. Specifically, no insights exist on how...... uncertainty develops over the different phases of OCPs. This paper presents case-based evidence on different sources of uncertainty in OCPs and how these develop over the different project phases. The results showed some surprising findings as the majority of the uncertainty did not manifest itself...

  14. Non-linear elastic thermal stress analysis with phase changes

    International Nuclear Information System (INIS)

    Amada, S.; Yang, W.H.

    1978-01-01

    The non-linear elastic, thermal stress analysis with temperature induced phase changes in the materials is presented. An infinite plate (or body) with a circular hole (or tunnel) is subjected to a thermal loading on its inner surface. The peak temperature around the hole reaches beyond the melting point of the material. The non-linear diffusion equation is solved numerically using the finite difference method. The material properties change rapidly at temperatures where the change of crystal structures and solid-liquid transition occur. The elastic stresses induced by the transient non-homogeneous temperature distribution are calculated. The stresses change remarkably when the phase changes occur and there are residual stresses remaining in the plate after one cycle of thermal loading. (Auth.)

  15. The microstructural changes of Ge2Sb2Te5 thin film during crystallization process

    Science.gov (United States)

    Xu, Jingbo; Qi, Chao; Chen, Limin; Zheng, Long; Xie, Qiyun

    2018-05-01

    Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.

  16. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

    Directory of Open Access Journals (Sweden)

    Huaping Wu

    2016-01-01

    Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  17. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

    2016-01-15

    The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  18. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

    2014-09-30

    Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

  19. An SPICE model for phase-change memory simulations

    International Nuclear Information System (INIS)

    Li Xi; Song Zhitang; Cai Daolin; Chen Xiaogang; Chen Houpeng

    2011-01-01

    Along with a series of research works on the physical prototype and properties of the memory cell, an SPICE model for phase-change memory (PCM) simulations based on Verilog-A language is presented. By handling it with the heat distribution algorithm, threshold switching theory and the crystallization kinetic model, the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell. In particular, it can emulate the cell's temperature curve and crystallinity profile during the programming process, which can enable us to clearly understand the PCM's working principle and program process. (semiconductor devices)

  20. Phase change material for temperature control and material storage

    Science.gov (United States)

    Wessling, Jr., Francis C. (Inventor); Blackwood, James M. (Inventor)

    2011-01-01

    A phase change material comprising a mixture of water and deuterium oxide is described, wherein the mole fraction of deuterium oxide is selected so that the mixture has a selected phase change temperature within a range between 0.degree. C. and 4.degree. C. The mixture is placed in a container and used for passive storage and transport of biomaterials and other temperature sensitive materials. Gels, nucleating agents, freezing point depression materials and colorants may be added to enhance the characteristics of the mixture.

  1. Lightweight Phase-Change Material For Solar Power

    Science.gov (United States)

    Stark, Philip

    1993-01-01

    Lightweight panels containing phase-change materials developed for use as heat-storage elements of compact, lightweight, advanced solar dynamic power system. During high insolation, heat stored in panels via latent heat of fusion of phase-change material; during low insolation, heat withdrawn from panels. Storage elements consist mainly of porous carbon-fiber structures imbued with germanium. Developed for use aboard space station in orbit around Earth, also adapted to lightweight, compact, portable solar-power systems for use on Earth.

  2. Cold storage with phase change material for building ventilation

    OpenAIRE

    Butala, Vincenc; Stritih, Uroš

    2015-01-01

    This paper presents an experimental and numerical analysis of building coolingusing night-time cold accumulation in phase change material (PCM), otherwise known as the "free-cooling" or "passive-cooling" principle. The phase change materials were used in ceilings and floors. The free-cooling principle is explained and some of the types of PCMs suitable for summer cooling are listed. An experiment was conducted using paraffin with a melting point of 22 °C as the PCM to store cold during the ni...

  3. Using adversary text to detect adversary phase changes.

    Energy Technology Data Exchange (ETDEWEB)

    Speed, Ann Elizabeth; Doser, Adele Beatrice; Warrender, Christina E.

    2009-05-01

    The purpose of this work was to help develop a research roadmap and small proof ofconcept for addressing key problems and gaps from the perspective of using text analysis methods as a primary tool for detecting when a group is undergoing a phase change. Self- rganizing map (SOM) techniques were used to analyze text data obtained from the tworld-wide web. Statistical studies indicate that it may be possible to predict phase changes, as well as detect whether or not an example of writing can be attributed to a group of interest.

  4. Nonvolatile memory design magnetic, resistive, and phase change

    CERN Document Server

    Li, Hai

    2011-01-01

    The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

  5. An SPICE model for phase-change memory simulations

    Energy Technology Data Exchange (ETDEWEB)

    Li Xi; Song Zhitang; Cai Daolin; Chen Xiaogang; Chen Houpeng, E-mail: ituluck@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2011-09-15

    Along with a series of research works on the physical prototype and properties of the memory cell, an SPICE model for phase-change memory (PCM) simulations based on Verilog-A language is presented. By handling it with the heat distribution algorithm, threshold switching theory and the crystallization kinetic model, the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell. In particular, it can emulate the cell's temperature curve and crystallinity profile during the programming process, which can enable us to clearly understand the PCM's working principle and program process. (semiconductor devices)

  6. Inserting Phase Change Lines into Microsoft Excel® Graphs.

    Science.gov (United States)

    Dubuque, Erick M

    2015-10-01

    Microsoft Excel® is a popular graphing tool used by behavior analysts to visually display data. However, this program is not always friendly to the graphing conventions used by behavior analysts. For example, adding phase change lines has typically been a cumbersome process involving the insertion of line objects that do not move when new data is added to a graph. The purpose of this article is to describe a novel way to add phase change lines that move when new data is added and when graphs are resized.

  7. A nanomagnetic study of phase transition in manganite thin films and ballistic magnetoresistance in magnetic nanocontacts

    Science.gov (United States)

    Chung, Seok-Hwan

    This work focuses on two largely unexplored phenomena in micromagnetics: the temperature-driven paramagnetic insulator to ferromagnetic (FM) metallic phase transition in perovskite manganite and ballistic magnetoresistance in spin-polarized nanocontacts. To investigate the phase transition, an off-the-shelf commercial scanning force microscope was redesigned for operation at temperatures from 350 K to 100 K. This adaptation is elaborated in this thesis. Using this system, both ferromagnetic and charge-ordered domain structures of (La 1-xPrx)0.67Ca0.33MnO3 thin film were observed by magnetic force microscopy (MFM) and electric force microscopy (EFM) operated in the vicinity of the peak resistance temperature (Tp). Predominantly in-plane oriented FM domains of sub-micrometer size emerge below Tp and their local magnetic moment increased as the temperature is reduced. Charge-ordered insulating regions show a strong electrostatic interaction with an EFM tip at a few degrees above Tp and the interaction correlates well with the temperature dependence of resistivity of the film. Cross-correlation analysis between topography and magnetic structure on several substrates indicates FM domains form on the flat regions of the surface, while charge ordering occurs at surface protrusions. In the investigation of ballistic magnetoresistance, new results on half-metallic ferromagnets formed by atomic or nanometer contacts of CrO2-CrO 2 and CrO2-Ni are presented showing magnetoconductance as high as 400%. Analysis of the magnetoconductance versus conductance data for all materials known to exhibit so-called ballistic magnetoresistance strongly suggests that magnetoconductance of nanocontacts follows a universal mechanism. If the maximum magnetoconductance is normalized to unity and the conductance is scaled with the resistivity of the material, then all data points fall onto a universal curve independent of the contact material and the transport mechanism. The analysis has been

  8. Nanometer-scale temperature measurements of phase change memory and carbon nanomaterials

    Science.gov (United States)

    Grosse, Kyle Lane

    This work investigates nanometer-scale thermometry and thermal transport in new electronic devices to mitigate future electronic energy consumption. Nanometer-scale thermal transport is integral to electronic energy consumption and limits current electronic performance. New electronic devices are required to improve future electronic performance and energy consumption, but heat generation is not well understood in these new technologies. Thermal transport deviates significantly at the nanometer-scale from macroscopic systems as low dimensional materials, grain structure, interfaces, and thermoelectric effects can dominate electronic performance. This work develops and implements an atomic force microscopy (AFM) based nanometer-scale thermometry technique, known as scanning Joule expansion microscopy (SJEM), to measure nanometer-scale heat generation in new graphene and phase change memory (PCM) devices, which have potential to improve performance and energy consumption of future electronics. Nanometer-scale thermometry of chemical vapor deposition (CVD) grown graphene measured the heat generation at graphene wrinkles and grain boundaries (GBs). Graphene is an atomically-thin, two dimensional (2D) carbon material with promising applications in new electronic devices. Comparing measurements and predictions of CVD graphene heating predicted the resistivity, voltage drop, and temperature rise across the one dimensional (1D) GB defects. This work measured the nanometer-scale temperature rise of thin film Ge2Sb2Te5 (GST) based PCM due to Joule, thermoelectric, interface, and grain structure effects. PCM has potential to reduce energy consumption and improve performance of future electronic memory. A new nanometer-scale thermometry technique is developed for independent and direct observation of Joule and thermoelectric effects at the nanometer-scale, and the technique is demonstrated by SJEM measurements of GST devices. Uniform heating and GST properties are observed for

  9. Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2010-02-15

    The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

  10. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict

  11. High-pressure Raman spectroscopy of phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Hsieh, Wen-Pin, E-mail: wphsieh@stanford.edu; Mao, Wendy L. [SLAC National Accelerator Laboratory, Stanford Institute for Materials and Energy Sciences, Menlo Park, California 94025 (United States); Department of Geological and Environmental Sciences, Stanford University, Stanford, California 94305 (United States); Zalden, Peter [SLAC National Accelerator Laboratory, Stanford Institute for Materials and Energy Sciences, Menlo Park, California 94025 (United States); Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen (Germany); JARA – Fundamentals of Future Information Technology, RWTH Aachen University, 52056 Aachen (Germany); Lindenberg, Aaron M. [SLAC National Accelerator Laboratory, Stanford Institute for Materials and Energy Sciences, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); SLAC National Accelerator Laboratory, PULSE Institute, Menlo Park, California 94025 (United States)

    2013-11-04

    We used high-pressure Raman spectroscopy to study the evolution of vibrational frequencies of the phase change materials (PCMs) Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 4}, and SnSb{sub 2}Te{sub 4}. We found that the critical pressure for triggering amorphization in the PCMs decreases with increasing vacancy concentration, demonstrating that the presence of vacancies, rather than differences in the atomic covalent radii, is crucial for pressure-induced amorphization in PCMs. Compared to the as-deposited amorphous phase, the pressure-induced amorphous phase has a similar vibrational spectrum but requires much lower laser power to transform into the crystalline phase, suggesting different kinetics of crystallization, which may have implications for applications of PCMs in non-volatile data storage.

  12. Synthesis and nanoscale thermal encoding of phase-change nanowires

    International Nuclear Information System (INIS)

    Sun Xuhui; Yu Bin; Meyyappan, M.

    2007-01-01

    Low-dimensional phase-change nanostructures provide a valuable research platform for understanding the phase-transition behavior and thermal properties at nanoscale and their potential in achieving superdense data storage. Ge 2 Sb 2 Te 5 nanowires have been grown using a vapor-liquid-solid technique and shown to exhibit distinctive properties that may overcome the present data storage scaling barrier. Local heating of an individual nanowire with a focused electron beam was used to shape a nano-bar-code on a Ge 2 Sb 2 Te 5 nanowire. The data encoding on Ge 2 Sb 2 Te 5 nanowire may promote novel device concepts to implement ultrahigh density, low energy, high speed data storage using phase-change nanomaterials with diverse thermal-programing strategies

  13. Phase change in uranium: Discrepancy between experiment and theory

    International Nuclear Information System (INIS)

    Akella, J.

    1996-01-01

    Using a diamond-anvil cell (DAC) phase transformation and room temperature Equation of State (EOS) for some actinides and lanthanides were studied to multimegabar (megabar = 100 GPa) pressures. Experimental data are compared with the theoretically predicted crystal structural changes and the pressure-volume relationships. There is a general agreement between theory and experiment for the structural changes in the lighter actinides, however in detail there are some discrepancies still. A generalized trend for the phase transformations in the lanthanides can be seen, which again has broad agreement with theory. We conclude that an accurate and robust theoretical base for predicting the phase transformations in the f-electron metals can be developed by incorporating the DAC data

  14. Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase.

    Science.gov (United States)

    Jeyasingh, Rakesh; Fong, Scott W; Lee, Jaeho; Li, Zijian; Chang, Kuo-Wei; Mantegazza, Davide; Asheghi, Mehdi; Goodson, Kenneth E; Wong, H-S Philip

    2014-06-11

    Phase change materials are widely considered for application in nonvolatile memories because of their ability to achieve phase transformation in the nanosecond time scale. However, the knowledge of fast crystallization dynamics in these materials is limited because of the lack of fast and accurate temperature control methods. In this work, we have developed an experimental methodology that enables ultrafast characterization of phase-change dynamics on a more technologically relevant melt-quenched amorphous phase using practical device structures. We have extracted the crystallization growth velocity (U) in a functional capped phase change memory (PCM) device over 8 orders of magnitude (10(-10) 10(8) K/s), which reveals the extreme fragility of Ge2Sb2Te5 in its supercooled liquid phase. Furthermore, these crystallization properties were studied as a function of device programming cycles, and the results show degradation in the cell retention properties due to elemental segregation. The above experiments are enabled by the use of an on-chip fast heater and thermometer called as microthermal stage (MTS) integrated with a vertical phase change memory (PCM) cell. The temperature at the PCM layer can be controlled up to 600 K using MTS and with a thermal time constant of 800 ns, leading to heating rates ∼10(8) K/s that are close to the typical device operating conditions during PCM programming. The MTS allows us to independently control the electrical and thermal aspects of phase transformation (inseparable in a conventional PCM cell) and extract the temperature dependence of key material properties in real PCM devices.

  15. Unusual crystallization behavior in Ga-Sb phase change alloys

    Directory of Open Access Journals (Sweden)

    Magali Putero

    2013-12-01

    Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

  16. Kodak phase-change media for optical tape applications

    Science.gov (United States)

    Tyan, Yuan-Sheng; Preuss, Donald R.; Olin, George R.; Vazan, Fridrich; Pan, Kee-Chuan; Raychaudhuri, Pranab. K.

    1993-01-01

    The SbInSn phase-change write-once optical medium developed by Eastman Kodak Company is particularly suitable for development into the next generation optical tape media. Its performance for optical recording has already been demonstrated in some of the highest performance optical disk systems. Some of the key performance features are presented.

  17. Phase Change Permeation Technology For Environmental Control Life Support Systems

    Science.gov (United States)

    Wheeler, Raymond M.

    2014-01-01

    Use of a phase change permeation membrane (Dutyion [Trademark]) to passively and selectively mobilize water in microgravity to enable improved water recovery from urine/brine for Environment Control and Life Support Systems (ECLSS) and water delivery to plans for potential use in microgravity.

  18. Doped SbTe phase change material in memory cells

    NARCIS (Netherlands)

    in ‘t Zandt, M.A.A.; Jedema, F.J.; Gravesteijn, Dirk J; Gravesteijn, D.J.; Attenborough, K.; Wolters, Robertus A.M.

    2009-01-01

    Phase Change Random Access Memory (PCRAM) is investigated as replacement for Flash. The memory concept is based on switching a chalcogenide from the crystalline (low ohmic) to the amorphous (high ohmic) state and vice versa. Basically two memory cell concepts exist: the Ovonic Unified Memory (OUM)

  19. Phase-change drywalls in a passive-solar building

    Energy Technology Data Exchange (ETDEWEB)

    Darkwa, K.; O' Callaghan, P.W.; Tetlow, D. [School of the Built Environment, The Applied Energy and Environmental Engineering Group, Nottingham Trent University, Burton Street, Nottingham NG1 4BU (United Kingdom)

    2006-05-15

    Integration of phase-change materials (PCMs) into building fabrics is considered to be one of the potential and effective ways of minimising energy-consumption and CO{sub 2}-emissions in the building sector. In order to assess the thermal effectiveness of this concept, composite PCM drywall samples (i.e., randomly mixed and laminated PCM drywalls) have been evaluated in a model passive-solar building. For a broader assessment, the effects of three phase-change zones (narrow, intermediate and wide) of the PCM sample were considered. The results showed that the laminated PCM sample with a narrow phase-change zone was capable of increasing the minimum room temperature by about 17% more than the randomly mixed type. Even though there was some display of a non-isothermal phase-change process, the laminated system proved to be thermally more effective in terms of evolution and utilisation of latent heat. A further heat-transfer enhancement process is, however, required for the development of the laminated system. . (author)

  20. Simulation of phase change drywalls in a passive solar building

    Energy Technology Data Exchange (ETDEWEB)

    Darkwa, K.; O' Callaghan, P.W. [School of the Built Environment, The Applied Energy and Environmental Engineering Group, Nottingham Trent University, Burton Street, Nottingham NG1 4BU (United Kingdom)

    2006-06-15

    Integration of phase change materials (PCMs) into building fabrics is considered to be one of the potential and effective ways of minimizing energy consumption and CO{sub 2} emissions in the building sector. In order to assess the thermal effectiveness of this concept, composite PCM drywall samples (i.e. randomly-mixed and laminated PCM drywalls) have been evaluated in a model passive solar building. For a broader assessment, effects of three phase change zones (narrow, intermediate and wide) of the PCM sample were considered. The results showed that the laminated PCM sample with a narrow phase change zone was capable of increasing the minimum room temperature by about 17% more than the randomly-mixed type. Even though there was some display of non-isothermal phase change process, the laminated system proved to be thermally more effective in terms of evolution and utilization of latent heat. Further heat transfer enhancement process is however required towards the development of the laminated system. [Author].

  1. Performance enhancement of hermetic compressor using phase change materials

    Science.gov (United States)

    Mahmoud, I. M.; Rady, M. A.; Huzayyin, A. S.

    2015-08-01

    The present study is motivated by the need for the research of simple measures for increasing energy efficiency of hermetic compressor. The measure is the application of phase change materials for performance enhancement. The first experimental study should be guide for choice of PCM. It has been performed to investigate the effects of thermostat setting temperature on the performance of hermetic compressor. The effects of thermostat setting temperature with and without load on power consumption have been analyzed. Performance enhancement using phase change materials (PCMs) has been studied by employing a phase change material Rubitherm-42 (RT-42) on the top surface of compressor. Choice of PCM material is based on basic compressor performance measured in the first part of the present study. Experiments have been carried out for different load values and different quantities of PCM. The quantity and phase change characteristic of PCM are essential parameters that determine the percentage of performance enhancement in term of energy consumption. Reduction of energy consumption of about 10% has been achieved in the present study by using PCM. The present study shows that how to reduce the electrical power consumption to enhance compressor heat dissipation method to improve efficiency.

  2. Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

    Science.gov (United States)

    Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

    2018-04-24

    2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Polarization Induced Changes in LSM Thin Film Electrode Composition Observed by In Operando Raman Spectroscopy and TOF-SIMS

    DEFF Research Database (Denmark)

    McIntyre, Melissa D.; Walker, Robert; Traulsen, Marie Lund

    2015-01-01

    an applied potential.1-3 The presented work explores the polarisation induced changes in LSM electrode composition by utilizing in operando Raman spectroscopy and post mortem ToF-SIMS depth profiling on LSM thin film model electrodes fabricated by pulsed laser deposition on YSZ substrates with a thin (200 nm...... recorded through the LSM thin film electrodes and revealed distinct compositional changes throughout the electrodes (Figure 2). The electrode elements and impurities separated into distinct layers that were more pronounced for the stronger applied polarisations. The mechanism behind this separation...

  4. Phase change thermal energy storage methods for combat vehicles, phase 1

    Science.gov (United States)

    Lynch, F. E.

    1986-06-01

    Three alternative cooling methods, based on latent heat absorption during phase changes, were studied for potential use in combat vehicle microclimate temperature control. Metal hydrides absorb heat as they release hydrogen gas. Plastic crystals change from one solid phase to another, absorbing heat in the process. Liquid air boils at cryogenic temperature and absorbs additional sensible heat as the cold gas mixes with the microclimate air flow. System designs were prepared for each of the three microclimate cooling concepts. These designs provide details about the three phase change materials, their containers and the auxiliary equipment needed to implement each option onboard a combat vehicle. The three concepts were compared on the basis of system mass, system volume and the energy required to regenerate them after use. Metal hydrides were found to be the lightest and smallest option by a large margin. The energy needed to regenerate a hydride thermal storage system can be extracted from the vehicle's exhaust gases.

  5. Changes in optical properties of polystyrene thin films by proton beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Sung Hyun; Jung, Jin Mook; Choi, Jae Hak [Dept. of of Polymer Science and Engineering, Chungnam National University, Daejeon (Korea, Republic of); Jung, Chan Hee; Hwang, In Tae; Shin, Jun Hwa [Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, Jeongeup(Korea, Republic of)

    2017-06-15

    In this study, changes in optical properties of polystyrene (PS) thin films by proton irradiation were investigated. PS thin films were irradiated with 150 keV proton ions at fluences ranging from 1 × 10{sup 15} to 1 × 10{sup 16} ions cm{sup -2}. The chemical structures and optical properties of proton beam-irradiated PS thin films were investigated by using a FT-IR spectrometer, an UVvis spectrophotometer, a photoluminescence (PL) and a fluorescence microscope. The results of the chemical structure analysis revealed that chemical functional groups, such as OH, C=O, and C=C, were formed in the PS films due to the oxidation and formation of carbon clusters by proton beam irradiation. The PL emission was generated and gradually red-shifted with an increasing fluence due to the higher formation of sp2 carbon clusters by proton beam irradiation. The highest PL intensity was obtained at a fluence of 5×10{sup 15} ions cm{sup -2}. The optical band gap of PS calculated by using a Tauc’s plot decreased with increasing the fluence due to the formation of sp2 carbon clusters by proton beam irradiation.

  6. A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jamshidian, M., E-mail: jamshidian@cc.iut.ac.ir [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar (Germany); Thamburaja, P., E-mail: prakash.thamburaja@gmail.com [Department of Mechanical & Materials Engineering, Universiti Kebangsaan Malaysia (UKM), Bangi 43600 (Malaysia); Rabczuk, T., E-mail: timon.rabczuk@tdt.edu.vn [Division of Computational Mechanics, Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Faculty of Civil Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)

    2016-12-15

    A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

  7. Two-dimensional high-performance thin-layer chromatography of tryptic bovine albumin digest using normal- and reverse-phase systems with silanized silica stationary phase.

    Science.gov (United States)

    Gwarda, Radosław Łukasz; Dzido, Tadeusz Henryk

    2013-10-18

    Among many advantages of planar techniques, two-dimensional (2D) separation seems to be the most important for analysis of complex samples. Here we present quick, simple and efficient two-dimensional high-performance thin-layer chromatography (2D HPTLC) of bovine albumin digest using commercial HPTLC RP-18W plates (silica based stationary phase with chemically bonded octadecyl ligands of coverage density 0.5μmol/m(2) from Merck, Darmstadt). We show, that at low or high concentration of water in the mobile phase comprised methanol and some additives the chromatographic systems with the plates mentioned demonstrate normal- or reversed-phase liquid chromatography properties, respectively, for separation of peptides obtained. These two systems show quite different separation selectivity and their combination into 2D HPTLC process provides excellent separation of peptides of the bovine albumin digest. Copyright © 2013 Elsevier B.V. All rights reserved.

  8. Transport mechanisms and wetting dynamics in molecularly thin films of long-chain alkanes at solid/vapour interface : relation to the solid-liquid phase transition

    OpenAIRE

    Lazar, Paul

    2005-01-01

    Wetting and phase transitions play a very important role our daily life. Molecularly thin films of long-chain alkanes at solid/vapour interfaces (e.g. C30H62 on silicon wafers) are very good model systems for studying the relation between wetting behaviour and (bulk) phase transitions. Immediately above the bulk melting temperature the alkanes wet partially the surface (drops). In this temperature range the substrate surface is covered with a molecularly thin ordered, solid-like alkane film (...

  9. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  10. Epitaxial growth of Ge-Sb-Te based phase change materials

    International Nuclear Information System (INIS)

    Perumal, Karthick

    2013-01-01

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  11. In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory

    KAUST Repository

    Meister, Stefan; Kim, SangBum; Cha, Judy J.; Wong, H.-S. Philip; Cui, Yi

    2011-01-01

    Phase-change memory (PCM) has been researched extensively as a promising alternative to flash memory. Important studies have focused on its scalability, switching speed, endurance, and new materials. Still, reliability issues and inconsistent

  12. Phase-change related epigenetic and physiological changes in Pinus radiata D. Don.

    Science.gov (United States)

    Fraga, Mario F; Cañal, Maria Jesús; Rodríguez, Roberto

    2002-08-01

    DNA methylation and polyamine levels were analysed before and after Pinus radiata D. Don. phase change in order to identify possible molecular and physiological phase markers. Juvenile individuals (without reproductive ability) were characterised by a degree of DNA methylation of 30-35% and a ratio of free polyamines to perchloric acid-soluble polyamine conjugates greater than 1, while mature trees (with reproductive ability) had 60% 5-methylcytosine and a ratio of free polyamines to perchloric acid-soluble polyamine conjugates of less than 1. Results obtained with trees that attained reproductive capacity during the experimental period confirmed that changes in the degree of DNA methylation and polyamine concentrations found among juvenile and mature states come about immediately after the phase change. We suggest that both indicators may be associated with the loss of morphogenic ability during ageing, particularly after phase change, through a number of molecular interactions, which are subsequently discussed.

  13. Intercalation crystallization of phase-pure α-HC(NH₂)₂PbI₃ upon microstructurally engineered PbI₂ thin films for planar perovskite solar cells.

    Science.gov (United States)

    Zhou, Yuanyuan; Yang, Mengjin; Kwun, Joonsuh; Game, Onkar S; Zhao, Yixin; Pang, Shuping; Padture, Nitin P; Zhu, Kai

    2016-03-28

    The microstructure of the solid-PbI2 precursor thin film plays an important role in the intercalation crystallization of the formamidinium lead triiodide perovskite (α-HC(NH2)2PbI3). It is shown that microstructurally engineered PbI2 thin films with porosity and low crystallinity are the most favorable for conversion into uniform-coverage, phase-pure α-HC(NH2)2PbI3 perovskite thin films. Planar perovskite solar cells fabricated using these thin films deliver power conversion efficiency (PCE) up to 13.8%.

  14. Fundamental incorporation of the density change during melting of a confined phase change material

    Science.gov (United States)

    Hernández, Ernesto M.; Otero, José A.

    2018-02-01

    The modeling of thermal diffusion processes taking place in a phase change material presents a challenge when the dynamics of the phase transition is coupled to the mechanical properties of the container. Thermo-mechanical models have been developed by several authors, however, it will be shown that these models only explain the phase transition dynamics at low pressures when the density of each phase experiences negligible changes. In our proposal, a new energy-mass balance equation at the interface is derived and found to be a consequence of mass conservation. The density change experienced in each phase is predicted by the proposed formulation of the problem. Numerical and semi-analytical solutions to the proposed model are presented for an example on a high temperature phase change material. The solutions to the models presented by other authors are observed to be well-behaved close to the isobaric limit. However, compared to the results obtained from our model, the change in the fusion temperature, latent heat, and absolute pressure is found to be greatly overestimated by other proposals when the phase transition is studied close to the isochoric regime.

  15. Phase-change material as a thermal storage media

    Energy Technology Data Exchange (ETDEWEB)

    El Chazly, Nihad M; Khattab, Nagwa M [Dokki, Cairo (Egypt)

    2000-07-01

    Heat storage based on the sensible heating of media such as water, rock and earth represent the first generation of solar energy storage subsystems and technology for their utilization. However, recently the heat storage based on the latent heat associated with a change in phase of a material offers many advantages over sensible heat storage. The most important characteristic of such a subsystem is its a sufficient storage capacity. An idealized model visualizing a thermal capacitor using a phase change material is constructed and subjected to simulated solar system environmental conditions. The proposed model is of a flat plate geometry consisting of two panels compartments forming the body of the capacitor containing the paraffin, leaving at their inner surfaces a thin passage allowing the water flow. The whole structure was assumed to be insulated to minimize heat loss. An analysis of the model is conducted using Goodman technique to generate data about the temperature distribution, the melt thickness, and the heat stored in the PCM under conditions of: ( i ) constant mass flow rate tests for various water inlet temperatures and ( ii ) constant water inlet temperature for various mass flow rate. A FORTRAN computer program was constructed to perform the analysis. It was found the water outlet temperature increases with time until it becomes nearly equals to the inlet temperature. Increasing the mass flow rate for a given inlet temperature, decreases the time required for outlet temperature to reach a given value. Increasing inlet temperature for a given mass flow rate gives a very rapid decrease in the time required for the outlet water temperature to reach a given value. Instantaneous rate of heat storage was determined from the inlet-to- exit temperature differential and measured flow rate. This rate was then integrated numerically to determine the cumulative total energy stored as a function of time. It was found that the instantaneous rate of heat storage

  16. Phase transformation during simultaneous chalcogenization of CuIn(S,Se){sub 2} thin films using metalorganic sources

    Energy Technology Data Exchange (ETDEWEB)

    Shoji, Ryuki; Kayama, Yoshiki; Sugiyama, Mutsumi [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, Shigefusa F. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

    2017-06-15

    Simultaneous chalcogenization of CuIn(S{sub y},Se{sub 1-y}){sub 2} (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C{sub 2}H{sub 5}){sub 2}Se] and ditertiarybutylsulfide [(t-C{sub 4}H{sub 9}){sub 2}S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu{sub 11}In{sub 9} metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Increasing the deposition rate of microcrystalline and amorphous silicon thin films for photovoltaic applications - Phase IV: 1997-1999

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-07-01

    This report on behalf of the Swiss Federal Office of Energy (SFOE) describes Phase IV of the project to test the feasibility and usefulness of Very High Frequency (VHF) plasma operation in large-area reactors suitable for the production of solar cell panels using thinly-deposited micro-crystalline silicon films. The report discusses the results of fast-deposition tests and trials using high-current DC arcs and VHF techniques to obtain deposition rates and film quality suitable for industrial processes for the production of thin-film solar cell panels. The effects of alternative plasma chemistry were also studied by adding silicon tetrafluoride to the standard silane/hydrogen mixtures. The report is concluded with calculations for optimum radio-frequency (RF) contact configuration for large area reactors with 1 m{sup 2} electrodes.

  18. Void fraction prediction in two-phase flows independent of the liquid phase density changes

    International Nuclear Information System (INIS)

    Nazemi, E.; Feghhi, S.A.H.; Roshani, G.H.

    2014-01-01

    Gamma-ray densitometry is a frequently used non-invasive method to determine void fraction in two-phase gas liquid pipe flows. Performance of flow meters using gamma-ray attenuation depends strongly on the fluid properties. Variations of the fluid properties such as density in situations where temperature and pressure fluctuate would cause significant errors in determination of the void fraction in two-phase flows. A conventional solution overcoming such an obstacle is periodical recalibration which is a difficult task. This paper presents a method based on dual modality densitometry using Artificial Neural Network (ANN), which offers the advantage of measuring the void fraction independent of the liquid phase changes. An experimental setup was implemented to generate the required input data for training the network. ANNs were trained on the registered counts of the transmission and scattering detectors in different liquid phase densities and void fractions. Void fractions were predicted by ANNs with mean relative error of less than 0.45% in density variations range of 0.735 up to 0.98 gcm −3 . Applying this method would improve the performance of two-phase flow meters and eliminates the necessity of periodical recalibration. - Highlights: • Void fraction was predicted independent of density changes. • Recorded counts of detectors/void fraction were used as inputs/output of ANN. • ANN eliminated necessity of recalibration in changeable density of two-phase flows

  19. High-frame rate imaging of two-phase flow in a thin rectangular channel using fast neutrons.

    Science.gov (United States)

    Zboray, R; Mor, I; Dangendorf, V; Stark, M; Tittelmeier, K; Cortesi, M; Adams, R

    2014-08-01

    We have demonstrated the feasibility of performing high-frame-rate, fast neutron radiography of air-water two-phase flows in a thin channel with rectangular cross section. The experiments have been carried out at the accelerator facility of the Physikalisch-Technische Bundesanstalt. A polychromatic, high-intensity fast neutron beam with average energy of 6 MeV was produced by 11.5 MeV deuterons hitting a thick Be target. Image sequences down to 10 ms exposure times were obtained using a fast-neutron imaging detector developed in the context of fast-neutron resonance imaging. Different two-phase flow regimes such as bubbly slug and churn flows have been examined. Two phase flow parameters like the volumetric gas fraction, bubble size and mean bubble velocities have been measured. The first results are promising, improvements for future experiments are also discussed. Copyright © 2014 Elsevier Ltd. All rights reserved.

  20. Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

    2014-11-01

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)Ox thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al2O3 sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length ( l φ ∝ T - 3 / 4 ), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  1. Phase-coherent electron transport in (Zn, Al)O{sub x} thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2014-11-24

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)O{sub x} thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al{sub 2}O{sub 3} sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length (l{sub φ}∝T{sup −3/4}), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  2. L1{sub 0} phase transition in FePt thin films via direct interface reaction

    Energy Technology Data Exchange (ETDEWEB)

    Li Xiaohong; Sun Hongyu; Wang Fengqing; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao (China); Liu Baoting; Guo Jianxin [College of Physics Science and Technology, Hebei University, 071002 Baoding (China)], E-mail: xyzh66@ysu.edu.cn

    2008-12-07

    Lowering the L1{sub 0} ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L1{sub 0} ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L1{sub 0} ordering temperature of T = 310 deg. C as compared with those deposited on Si/SiO{sub 2} substrates. The accelerated L1{sub 0} ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L1{sub 0} ordering process of the FePt films.

  3. L10 phase transition in FePt thin films via direct interface reaction

    International Nuclear Information System (INIS)

    Li Xiaohong; Sun Hongyu; Wang Fengqing; Li Wei; Zhang Xiangyi; Liu Baoting; Guo Jianxin

    2008-01-01

    Lowering the L1 0 ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L1 0 ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L1 0 ordering temperature of T = 310 deg. C as compared with those deposited on Si/SiO 2 substrates. The accelerated L1 0 ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L1 0 ordering process of the FePt films.

  4. Disorder-induced localization in crystalline phase-change materials.

    Science.gov (United States)

    Siegrist, T; Jost, P; Volker, H; Woda, M; Merkelbach, P; Schlockermann, C; Wuttig, M

    2011-03-01

    Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms leading to metal-insulator transition include electron correlation (Mott transition) or disorder (Anderson localization), but a clear distinction is difficult. Here we report on a metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal-insulator transition is due to strong disorder usually associated only with amorphous solids. With pronounced disorder but weak electron correlation, these phase-change materials form an unparalleled quantum state of matter. Their universal electronic behaviour seems to be at the origin of the remarkable reproducibility of the resistance switching that is crucial to their applications in non-volatile-memory devices. Controlling the degree of disorder in crystalline phase-change materials might enable multilevel resistance states in upcoming storage devices.

  5. X-ray diffraction and Moessbauer studies of structural changes and L10 ordering kinetics during annealing of polycrystalline Fe51Pt49 thin films

    International Nuclear Information System (INIS)

    Spada, F.E.; Parker, F.T.; Platt, C.L.; Howard, J.K.

    2003-01-01

    Room-temperature x-ray diffraction and Moessbauer effect techniques have been used to characterize the structural features and local atomic environments of sputtered Fe 51 Pt 49 thin films following various isothermal treatments. Both techniques show that no significant changes occur in the chemically ordered L1 0 tetragonal phase after it has formed. In contrast, changes in the disordered face-centered-cubic (fcc) phase are observed prior to the transformation into the ordered tetragonal phase. Moessbauer measurements indicate the development of increasing short-range order in the disordered fcc phase with increasing annealing temperature. Asymmetries in the fcc x-ray diffraction profiles also suggest the presence of lattice distortions caused by atomic size differences commonly found in the quenched disordered fcc phase of materials that form ordered structures. Quasi-real-time kinetic measurements of the disorder→order transformation in sputtered Fe 51 Pt 49 thin films within the temperature range 300 deg. C≤T≤400 deg. C have also been conducted using high-temperature x-ray diffraction techniques. Significant differences are observed between the kinetic parameters determined in this study and those of previous reports. It is proposed that these differences arise from the lower temperature range investigated in the present work, where the gradual changes occurring in the fcc phase can influence the rate of the ordering transformation. Furthermore, because the initial state of disorder in Fe ∼50 Pt ∼50 films can be influenced by the deposition conditions, variability in the low-temperature ordering kinetics should be expected among Fe ∼50 Pt ∼50 films prepared under different conditions

  6. Vortex phase-induced changes of the statistical properties of a partially coherent radially polarized beam.

    Science.gov (United States)

    Guo, Lina; Chen, Yahong; Liu, Xianlong; Liu, Lin; Cai, Yangjian

    2016-06-27

    Partially coherent radially polarized (PCRP) beam was introduced and generated in recent years. In this paper, we investigate the statistical properties of a PCRP beam embedded with a vortex phase (i.e., PCRP vortex beam). We derive the analytical formula for the cross-spectral density matrix of a PCRP vortex beam propagating through a paraxial ABCD optical system and analyze the statistical properties of a PCRP vortex beam focused by a thin lens. It is found that the statistical properties of a PCRP vortex beam on propagation are much different from those of a PCRP beam. The vortex phase induces not only the rotation of the beam spot, but also the changes of the beam shape, the degree of polarization and the state of polarization. We also find that the vortex phase plays a role of resisting the coherence-induced degradation of the intensity distribution and the coherence-induced depolarization. Furthermore, we report experimental generation of a PCRP vortex beam for the first time. Our results will be useful for trapping and rotating particles, free-space optical communications and detection of phase object.

  7. Reconfigurable optical manipulation by phase change material waveguides.

    Science.gov (United States)

    Zhang, Tianhang; Mei, Shengtao; Wang, Qian; Liu, Hong; Lim, Chwee Teck; Teng, Jinghua

    2017-05-25

    Optical manipulation by dielectric waveguides enables the transportation of particles and biomolecules beyond diffraction limits. However, traditional dielectric waveguides could only transport objects in the forward direction which does not fulfill the requirements of the next generation lab-on-chip system where the integrated manipulation system should be much more flexible and multifunctional. In this work, bidirectional transportation of objects on the nanoscale is demonstrated on a rectangular waveguide made of the phase change material Ge 2 Sb 2 Te 5 (GST) by numerical simulations. Either continuous pushing forces or pulling forces are generated on the trapped particles when the GST is in the amorphous or crystalline phase. With the technique of a femtosecond laser induced phase transition on the GST, we further proposed a reconfigurable optical trap array on the same waveguide. This work demonstrates GST waveguide's potential of achieving multifunctional manipulation of multiple objects on the nanoscale with plausible optical setups.

  8. A review of thinning effects on Scots pine stands: From growth and yield to new challenges under global change

    Directory of Open Access Journals (Sweden)

    Miren del Río

    2017-10-01

    Full Text Available Aim of the study: Thinning experiments in Scots pine (Pinus sylvestris L. stands have been carried out since long in different regions of its distribution. The aim of this paper is to gather the knowledge about the thinning effects on Scots pine stands, from the effects on growth and yield to the provision of ecosystem services in the framework of climate change. Area of study: The review covered studies from different regions of the distribution area of Scots pine Aim of the study: Thinning experiments in Scots pine (Pinus sylvestris L. stands have been carried out for many years in different regions of its distribution. The aim of this paper is to gather knowledge regarding the effects of thinning on Scots pine stands, from the effects on growth and yield to the provision of ecosystem services in the context of climate change. Area of study: The review covers studies from different regions of the distribution area of Scots pine Material and methods: We reviewed the effect of thinning on four aspects: growth and yield, stability against snow and wind, response to drought, and ecosystem services. Main results: Heavy thinning involves a loss in volume yield, although the magnitude depends on the region, site and stand age. Thinning generally does not affect dominant height while the positive effect on tree diameter depends on the thinning regime. The stability of the stand against snow and wind is lower after the first thinning and increases in the long term. The impact of extreme droughts on tree growth is lower in thinned stands, which is linked to a better capacity to recover after the drought. Thinning generally reduces the wood quality, litter mass, and stand structural diversity, while having neutral or positive effects on other ecosystem services, although these effects can vary depending on the thinning regime. However, scarce information is available for most of the ecosystem services. Research highlight: Existing thinning experiments in

  9. A review of thinning effects on Scots pine stands: From growth and yield to new challenges under global change

    International Nuclear Information System (INIS)

    Miren del Río, M.P.; Bravo-Oviedo, Andrés; Pretzsch, Hans; Löf, Magnus; Ruiz-Peinado, Ricardo

    2017-01-01

    Aim of the study: Thinning experiments in Scots pine (Pinus sylvestris L.) stands have been carried out since long in different regions of its distribution. The aim of this paper is to gather the knowledge about the thinning effects on Scots pine stands, from the effects on growth and yield to the provision of ecosystem services in the framework of climate change. Area of study: The review covered studies from different regions of the distribution area of Scots pine Aim of the study: Thinning experiments in Scots pine (Pinus sylvestris L.) stands have been carried out for many years in different regions of its distribution. The aim of this paper is to gather knowledge regarding the effects of thinning on Scots pine stands, from the effects on growth and yield to the provision of ecosystem services in the context of climate change. Area of study: The review covers studies from different regions of the distribution area of Scots pine Material and methods: We reviewed the effect of thinning on four aspects: growth and yield, stability against snow and wind, response to drought, and ecosystem services. Main results: Heavy thinning involves a loss in volume yield, although the magnitude depends on the region, site and stand age. Thinning generally does not affect dominant height while the positive effect on tree diameter depends on the thinning regime. The stability of the stand against snow and wind is lower after the first thinning and increases in the long term. The impact of extreme droughts on tree growth is lower in thinned stands, which is linked to a better capacity to recover after the drought. Thinning generally reduces the wood quality, litter mass, and stand structural diversity, while having neutral or positive effects on other ecosystem services, although these effects can vary depending on the thinning regime. However, scarce information is available for most of the ecosystem services. Research highlight: Existing thinning experiments in Scots pine stands

  10. A review of thinning effects on Scots pine stands: From growth and yield to new challenges under global change

    Energy Technology Data Exchange (ETDEWEB)

    Miren del Río, M.P.; Bravo-Oviedo, Andrés; Pretzsch, Hans; Löf, Magnus; Ruiz-Peinado, Ricardo

    2017-11-01

    Aim of the study: Thinning experiments in Scots pine (Pinus sylvestris L.) stands have been carried out since long in different regions of its distribution. The aim of this paper is to gather the knowledge about the thinning effects on Scots pine stands, from the effects on growth and yield to the provision of ecosystem services in the framework of climate change. Area of study: The review covered studies from different regions of the distribution area of Scots pine Aim of the study: Thinning experiments in Scots pine (Pinus sylvestris L.) stands have been carried out for many years in different regions of its distribution. The aim of this paper is to gather knowledge regarding the effects of thinning on Scots pine stands, from the effects on growth and yield to the provision of ecosystem services in the context of climate change. Area of study: The review covers studies from different regions of the distribution area of Scots pine Material and methods: We reviewed the effect of thinning on four aspects: growth and yield, stability against snow and wind, response to drought, and ecosystem services. Main results: Heavy thinning involves a loss in volume yield, although the magnitude depends on the region, site and stand age. Thinning generally does not affect dominant height while the positive effect on tree diameter depends on the thinning regime. The stability of the stand against snow and wind is lower after the first thinning and increases in the long term. The impact of extreme droughts on tree growth is lower in thinned stands, which is linked to a better capacity to recover after the drought. Thinning generally reduces the wood quality, litter mass, and stand structural diversity, while having neutral or positive effects on other ecosystem services, although these effects can vary depending on the thinning regime. However, scarce information is available for most of the ecosystem services. Research highlight: Existing thinning experiments in Scots pine stands

  11. Methylmercury speciation in the dissolved phase of a stratified lake using the diffusive gradient in thin film technique

    Energy Technology Data Exchange (ETDEWEB)

    Clarisse, Olivier [Trent University, Department of Chemistry, 1600 West Bank Drive, Peterborough, Ontario K9J 7B8 (Canada)], E-mail: olivier.clarisse@umoncton.ca; Foucher, Delphine; Hintelmann, Holger [Trent University, Department of Chemistry, 1600 West Bank Drive, Peterborough, Ontario K9J 7B8 (Canada)

    2009-03-15

    The diffusive gradient in thin film (DGT) technique was successfully used to monitor methylmercury (MeHg) speciation in the dissolved phase of a stratified boreal lake, Lake 658 of the Experimental Lakes Area (ELA) in Ontario, Canada. Water samples were conventionally analysed for MeHg, sulfides, and dissolved organic matter (DOM). MeHg accumulated by DGT devices was compared to MeHg concentration measured conventionally in water samples to establish MeHg speciation. In the epilimnion, MeHg was almost entirely bound to DOM. In the top of the hypolimnion an additional labile fraction was identified, and at the bottom of the lake a significant fraction of MeHg was potentially associated to colloidal material. As part of the METAALICUS project, isotope enriched inorganic mercury was applied to Lake 658 and its watershed for several years to establish the relationship between atmospheric Hg deposition and Hg in fish. Little or no difference in MeHg speciation in the dissolved phase was detected between ambient and spike MeHg. - Methylmercury speciation was determined in the dissolved phase of a stratified lake using the diffusive gradient in thin film technique.

  12. Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

    Energy Technology Data Exchange (ETDEWEB)

    Calderón, Jorge A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas, Universidad del Rosario, Cra. 24 No. 63C-69, Bogotá (Colombia); Dussan, A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia)

    2017-02-28

    Highlights: • (GaMn)Sb thin films were fabricated using the direct current (DC) magnetron co-sputtering. • Presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases. • A minor difference of 1% was found with respect to percolation theory, which confirmed the validity of the diffusional model in semiconductor alloys with magnetic properties. • Increase in the localized states density (N{sub F}) with increasing substrate temperature. - Abstract: We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

  13. Methylmercury speciation in the dissolved phase of a stratified lake using the diffusive gradient in thin film technique

    International Nuclear Information System (INIS)

    Clarisse, Olivier; Foucher, Delphine; Hintelmann, Holger

    2009-01-01

    The diffusive gradient in thin film (DGT) technique was successfully used to monitor methylmercury (MeHg) speciation in the dissolved phase of a stratified boreal lake, Lake 658 of the Experimental Lakes Area (ELA) in Ontario, Canada. Water samples were conventionally analysed for MeHg, sulfides, and dissolved organic matter (DOM). MeHg accumulated by DGT devices was compared to MeHg concentration measured conventionally in water samples to establish MeHg speciation. In the epilimnion, MeHg was almost entirely bound to DOM. In the top of the hypolimnion an additional labile fraction was identified, and at the bottom of the lake a significant fraction of MeHg was potentially associated to colloidal material. As part of the METAALICUS project, isotope enriched inorganic mercury was applied to Lake 658 and its watershed for several years to establish the relationship between atmospheric Hg deposition and Hg in fish. Little or no difference in MeHg speciation in the dissolved phase was detected between ambient and spike MeHg. - Methylmercury speciation was determined in the dissolved phase of a stratified lake using the diffusive gradient in thin film technique

  14. Controllable biomimetic adhesion using embedded phase change material

    International Nuclear Information System (INIS)

    Krahn, J; Sameoto, D; Menon, C

    2011-01-01

    In many cases, such as in the instance of climbing robots or temporary adhesives, there is the need to be able to dynamically control the level of adhesion a biomimetic dry adhesive can provide. In this study, the effect of changing the backing layer stiffness of a dry adhesive is examined. Embedding a phase change material within the backing of a synthetic dry adhesive sheet allows the stiffness to be tailored at different points of a preload and adhesion cycle. Larger contact areas and more equal load sharing between adhesive fibres can be achieved by increasing the backing layer stiffness after initial deformation when the adhesive backing is loaded in its softened state. Adhesion behaviour is examined when the backing layer is maintained in solid and softened phases during complete load cycles and for load cycles under the condition of contact with the softened phase backing followed by pull-off during the solid phase. Absolute adhesion force is increased for trials in which a soft backing layer hardens prior to pull-off. This effect is due to the increased contact area made between the rounded probe and the softened material during preloading and the more equal load sharing condition during pull-off when the backing layer becomes stiff again

  15. Complex Nonlinearity Chaos, Phase Transitions, Topology Change and Path Integrals

    CERN Document Server

    Ivancevic, Vladimir G

    2008-01-01

    Complex Nonlinearity: Chaos, Phase Transitions, Topology Change and Path Integrals is a book about prediction & control of general nonlinear and chaotic dynamics of high-dimensional complex systems of various physical and non-physical nature and their underpinning geometro-topological change. The book starts with a textbook-like expose on nonlinear dynamics, attractors and chaos, both temporal and spatio-temporal, including modern techniques of chaos–control. Chapter 2 turns to the edge of chaos, in the form of phase transitions (equilibrium and non-equilibrium, oscillatory, fractal and noise-induced), as well as the related field of synergetics. While the natural stage for linear dynamics comprises of flat, Euclidean geometry (with the corresponding calculation tools from linear algebra and analysis), the natural stage for nonlinear dynamics is curved, Riemannian geometry (with the corresponding tools from nonlinear, tensor algebra and analysis). The extreme nonlinearity – chaos – corresponds to th...

  16. The role of phase change materials for the sustainable energy

    Directory of Open Access Journals (Sweden)

    Kuta Marta

    2016-01-01

    Full Text Available Unceasing global economic development leads to continuous increase of energy demand. Considering the limited conventional resources of energy as well as impact on the environment associated with its use, it is important to focus on the rational management of energy resources and on supporting the development of new technologies related to both conventional and renewable energy resources. In a number of cases the use of phase change materials (PCMs turns out to be a reasonable solution. This paper contains a summary of well-studied and known, previously used solutions based on phase change materials as well as novel possibilities, which are under development. It has been decided to investigate this topic due to the wide range of highly effective solutions. The review is focused on selected applications of PCMs for technologies which are designed to improve energy efficiency and on PCMs used in technologies based on renewable energy sources.

  17. Development of Latent Heat Storage Phase Change Material Containing Plaster

    Directory of Open Access Journals (Sweden)

    Diana BAJARE

    2016-05-01

    Full Text Available This paper reviews the development of latent heat storage Phase Change Material (PCM containing plaster as in passive application. Due to the phase change, these materials can store higher amounts of thermal energy than traditional building materials and can be used to add thermal inertia to lightweight constructions. It was shown that the use of PCMs have advantages stabilizing the room temperature variations during summer days, provided sufficient night ventilation is allowed. Another advantage of PCM usage is stabilized indoor temperature on the heating season. The goal of this study is to develop cement and lime based plaster containing microencapsulated PCM. The plaster is expected to be used for passive indoor applications and enhance the thermal properties of building envelope. The plaster was investigated under Scanning Electron Microscope and the mechanical, physical and thermal properties of created plaster samples were determined.

  18. Change in generally accepted regularity of phase transformations of quartzite

    Science.gov (United States)

    Kukartsev, V. A.; Kukartsev, V. V.; Chzhan, E. A.; Tynchenko, V. S.; Stupina, A. A.

    2018-05-01

    The subject of this research is phasic transformations of quartzites that are under temperature treatment to remove moisture. This technology is used in enterprises operating melting furnaces. The studies have shown that using a temperature regime consisting in heating to 800° C and holding for 2 hours, after cooling, quartzite changes its color and appears a shift in the angle of the interplanar distances of the crystal lattice by 6.6% in it. The use of a temperature treatment regime consisting in heating to 200° C and holding for 4 hours does not reveal such changes. With subsequent exposure to these samples of the temperature regime corresponding to the sintering process of the liner, the following is established. In a sample pretreated with a temperature of 800° C, at a temperature of 1550° C, a tridymite phase appears. In the sample of a 200° C pretreated with temperature, a phase of cristobalite appears without tridymite.

  19. Optimization of a phase change material wallboard for building use

    International Nuclear Information System (INIS)

    Kuznik, Frederic; Virgone, Joseph; Noel, Jean

    2008-01-01

    In construction, the use of phase change materials (PCM) allows the storage/release of energy from the solar radiation and/or internal loads. The application of such materials for lightweight construction (e.g., a wood house) makes it possible to improve thermal comfort and reduce energy consumption. A wallboard composed of a new PCM material is investigated in this paper to enhance the thermal behavior of a lightweight internal partition wall. The paper focuses on the optimization of phase change material thickness. The in-house software CODYMUR is used to optimize the PCM wallboard by the means of numerical simulations. The results show that an optimal PCM thickness exists. The optimal PCM thickness value is then calculated for use in construction

  20. Dynamics of energy storage in phase change drywall systems

    Energy Technology Data Exchange (ETDEWEB)

    Darkwa, K.; Kim, J.-S. [Nottingham Trent University (United Kingdom). School of the Built Environment

    2005-07-01

    Experimental evaluations of manufactured samples of laminated and randomly mixed phase change material (PCM) drywalls have been carried out and compared with numerical results. The analysis showed that the laminated PCM drywall performed thermally better. Even though there was a maximum 3% deviation of the average experimental result from the numerical values, the laminated PCM board achieved about 55% of the phase change process as against 48% for the randomly distributed drywall sample. The laminated board sample also released about 27% more latent heat than the randomly distributed type at the optimum time of 90 min thus validating previous simulation study. Given the experimental conditions and assumptions the experiment has proved that it is feasible to develop the laminated PCM technique for enhancing and minimising multi-dimensional heat transfers in drywall systems. Further practical developments are however encouraged to improve the overall level of heat transfer. (author)

  1. Heat transfer in neuron composite laminated phase-change drywall

    Energy Technology Data Exchange (ETDEWEB)

    Darkwa, K.; Kim, J.S. [Nottingham Trent University (United Kingdom). School of Property and Construction

    2004-04-01

    Inadequate heat transfer and overall reduction in thermal conductivities during energy recovery are identified as the main barriers affecting the performance of a phase-change material (PCM) wallboard system. Two integrated PCM drywall systems have been evaluated numerically, and the results showed a great advantage of the laminated PCM wallboard system over the randomly mixed PCM type in terms of enhanced thermal performance and rapid heat transfer rates under a narrow temperature swing. For instance, the maximum instantaneous enhancement in heat flux obtained was between 20 and 50 per cent higher during the phase change process, with up to about 18 per cent more heat storage and release capacity. However, experimental evaluation is required for validation and development. (author)

  2. Optimization of a phase change material wallboard for building use

    Energy Technology Data Exchange (ETDEWEB)

    Kuznik, Frederic; Virgone, Joseph [Thermal Sciences Center of Lyon, CNRS, UMR 5008, INSA de Lyon, Universite Lyon 1, Bat Freyssinet, 40 Rue des Arts, 69621 Villeurbanne Cedex (France); Noel, Jean [Free-lance Scientific Software Developer, 15 Place Carnot, 69002 Lyon (France)

    2008-08-15

    In construction, the use of phase change materials (PCM) allows the storage/release of energy from the solar radiation and/or internal loads. The application of such materials for lightweight construction (e.g., a wood house) makes it possible to improve thermal comfort and reduce energy consumption. A wallboard composed of a new PCM material is investigated in this paper to enhance the thermal behavior of a lightweight internal partition wall. The paper focuses on the optimization of phase change material thickness. The in-house software CODYMUR is used to optimize the PCM wallboard by the means of numerical simulations. The results show that an optimal PCM thickness exists. The optimal PCM thickness value is then calculated for use in construction. (author)

  3. Round-Robin Test of Paraffin Phase-Change Material

    Science.gov (United States)

    Vidi, S.; Mehling, H.; Hemberger, F.; Haussmann, Th.; Laube, A.

    2015-11-01

    A round-robin test between three institutes was performed on a paraffin phase-change material (PCM) in the context of the German quality association for phase-change materials. The aim of the quality association is to define quality and test specifications for PCMs and to award certificates for successfully tested materials. To ensure the reproducibility and comparability of the measurements performed at different institutes using different measuring methods, a round-robin test was performed. The sample was unknown. The four methods used by the three participating institutes in the round-robin test were differential scanning calorimetry, Calvet calorimetry and three-layer calorimetry. Additionally, T-history measurements were made. The aim of the measurements was the determination of the enthalpy as a function of temperature. The results achieved following defined test specifications are in excellent agreement.

  4. Microencapsulated Phase-Change Materials For Storage Of Heat

    Science.gov (United States)

    Colvin, David P.

    1989-01-01

    Report describes research on engineering issues related to storage and transport of heat in slurries containing phase-change materials in microscopic capsules. Specific goal of project to develop lightweight, compact, heat-management systems used safely in inhabited areas of spacecraft. Further development of obvious potential of technology expected to lead to commercialization and use in aircraft, electronic equipment, machinery, industrial processes, and other sytems in which requirements for management of heat compete with severe restrictions on weight or volume.

  5. Portable Thermoelectric Power Generator Coupled with Phase Change Material

    OpenAIRE

    Lim Chong C.; Al-Kayiem Hussain H.; Sing Chin Y.

    2014-01-01

    Solar is the intermittent source of renewable energy and all thermal solar systems having a setback on non-functioning during the night and cloudy environment. This paper presents alternative solution for power generation using thermoelectric which is the direct conversion of temperature gradient of hot side and cold side of thermoelectric material to electric voltage. Phase change material with latent heat effect would help to prolong the temperature gradient across thermoelectric material f...

  6. Innovative Phase Change Approach for Significant Energy Savings

    Science.gov (United States)

    2016-09-01

    related to the production, use, transmission , storage, control, or conservation of energy that will – (A) reduce the need for additional energy supplies...Conditions set for operation were: a. The computer with the broadband wireless card is to be used for data collection, transmission and...FINAL REPORT Innovative Phase Change Approach for Significant Energy Savings ESTCP Project EW-201138 SEPTEMBER 2016 Dr. Aly H Shaaban Applied

  7. Study of large nonlinear change phase in Hibiscus Sabdariffa

    Science.gov (United States)

    Trejo-Durán, M.; Alvarado-Méndez, E.; Andrade-Lucio, J. A.; Rojas-Laguna, R.; Vázquez-Guevara, M. A.

    2015-09-01

    High intensities electromagnetic energy interacting with organic media gives rise to nonlinear optical effects. Hibiscus Sabdariffa is a flower whose concentrated solution presents interesting nonlinear optical properties. This organic material shows an important self-phase modulation with changes bigger than 2π. We present a diffraction ring patterns study of the Hibiscus Sabdariffa solution. Numerical results of transmittance, with refraction and simultaneous absorption, are shown.

  8. Phase change - memory materials - composition, structure, and properties

    Czech Academy of Sciences Publication Activity Database

    Frumar, M.; Frumarová, Božena; Wágner, T.; Hrdlička, M.

    2007-01-01

    Roč. 18, suppl.1 (2007), S169-S174 ISSN 0957-4522. [International Conference on Optical and Optoelectronic Properties of Materials and Applications 2006. Darwin, 16.06.2006-20.06.2006] R&D Projects: GA ČR GA203/06/0627 Institutional research plan: CEZ:AV0Z40500505 Keywords : phase change memory Subject RIV: CA - Inorganic Chemistry Impact factor: 0.947, year: 2007

  9. Compressive and flexural strength of high strength phase change mortar

    Science.gov (United States)

    Qiao, Qingyao; Fang, Changle

    2018-04-01

    High-strength cement produces a lot of hydration heat when hydrated, it will usually lead to thermal cracks. Phase change materials (PCM) are very potential thermal storage materials. Utilize PCM can help reduce the hydration heat. Research shows that apply suitable amount of PCM has a significant effect on improving the compressive strength of cement mortar, and can also improve the flexural strength to some extent.

  10. Normal and Reversed-Phase Thin Layer Chromatography of Green Leaf Extracts

    Science.gov (United States)

    Sjursnes, Birte Johanne; Kvittingen, Lise; Schmid, Rudolf

    2015-01-01

    Introductory experiments of chromatography are often conducted by separating colored samples, such as inks, dyes, and plant extracts, using filter paper, chalk, or thin layer chromatography (TLC) plates with various solvent systems. Many simple experiments have been reported. The relationship between normal chromatography and reversed-phase…

  11. Analysis of Pipe Wall-thinning Caused by Water Chemistry Change in Secondary System of Nuclear Power Plant

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Hun; Hwang, Kyeongmo [KEPCO E and C, Gimcheon (Korea, Republic of); Moon, Seung-Jae [Hanyang University, Seoul (Korea, Republic of)

    2015-12-15

    Pipe wall-thinning by flow-accelerated corrosion (FAC) is a significant and costly damage of secondary system piping in nuclear power plants (NPPs). All NPPs have their management programs to ensure pipe integrity from wall-thinning. This study analyzed the pipe wall-thinning caused by changing the amine, which is used for adjusting the water chemistry in the secondary system of NPPs. The pH change was analyzed according to the addition of amine. Then, the wear rate calculated in two different amines was compared at the steam cycle in NPPs. As a result, increasing the pH at operating temperature (Hot pH) can reduce the rate of FAC damage significantly. Wall-thinning is affected by amine characteristics depending on temperature and quality of water.

  12. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    Science.gov (United States)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  13. Degradation of gas-phase trichloroethylene over thin-film TiO2 photocatalyst in multi-modules reactor

    International Nuclear Information System (INIS)

    Kim, Sang Bum; Lee, Jun Yub; Kim, Gyung Soo; Hong, Sung Chang

    2009-01-01

    The present paper examined the photocatalytic degradation (PCD) of gas-phase trichloroethylene (TCE) over thin-film TiO 2 . A large-scale treatment of TCE was carried out using scale-up continuous flow photo-reactor in which nine reactors were arranged in parallel and series. The parallel or serial arrangement is a significant factor to determine the special arrangement of whole reactor module as well as to compact the multi-modules in a continuous flow reactor. The conversion of TCE according to the space time was nearly same for parallel and serial connection of the reactors.

  14. Amplitude-phase characteristics of electromagnetic fields diffracted by a hole in a thin film with realistic optical properties

    Science.gov (United States)

    Dorofeyev, Illarion

    2009-03-01

    Characteristics of a quasi-spherical wave front of an electromagnetic field diffracted by a subwavelength hole in a thin film with real optical properties are studied. Related diffraction problem is solved in general by use of the scalar and vector Green's theorems and related Green's function of a boundary-value problem. Local phase deviations of a diffracted wave front from an ideal spherical front are calculated. Diffracted patterns are calculated for the coherent incident fields in case of holes array in a screen of perfect conductivity.

  15. Swift heavy ion irradiation induced phase transformation in undoped and niobium doped titanium dioxide composite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gautam, Subodh K., E-mail: subodhkgtm@gmail.com [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Chettah, Abdelhak [LGMM Laboratory, Université 20 Août 1955-Skikda, BP 26, 21000 Skikda (Algeria); Singh, R.G. [Department of Physics, Bhagini Nivedita College, Delhi University, Delhi 110043 (India); Ojha, Sunil; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

    2016-07-15

    Study reports the effect of swift heavy ion (SHI) irradiation induced phase transformation in undoped and Niobium doped anatase TiO{sub 2} composite thin films. Investigations were carried out at different densities of electronic excitations (EEs) using 120 MeV Ag and 130 MeV Ni ions irradiations. Films were initially annealed at 900 °C and results revealed that undoped films were highly stable in anatase phase, while the Nb doped films showed the composite nature with the weak presence of Niobium penta-oxide (Nb{sub 2}O{sub 5}) phase. The effect at low density of EEs in undoped film show partial anatase to rutile phase transformation; however doped film shows only further growth of Nb{sub 2}O{sub 5} phase beside the anatase to rutile phase transformation. At higher density of EEs induced by Ag ions, registered continuous ion track of ∼3 nm in lattice which leads to nano-crystallization followed by decomposition/amorphization of rutile TiO{sub 2} and Nb{sub 2}O{sub 5} phases in undoped and doped films, respectively. However, Ni ions are only induced discontinuous sequence of ion tracks with creation of damage and disorder and do not show amorphization in the lattice. The in-elastic thermal spike calculations were carried out for anatase TiO{sub 2} phase to understand the effect of EEs on anatase to rutile phase transformation followed by amorphization in NTO films in terms of continuous and discontinuous track formation by SHI irradiation.

  16. Recognition of conformational changes in beta-lactoglobulin by molecularly imprinted thin films.

    Science.gov (United States)

    Turner, Nicholas W; Liu, Xiao; Piletsky, Sergey A; Hlady, Vladimir; Britt, David W

    2007-09-01

    Pathogenesis in protein conformational diseases is initiated by changes in protein secondary structure. This molecular restructuring presents an opportunity for novel shape-based detection approaches, as protein molecular weight and chemistry are otherwise unaltered. Here we apply molecular imprinting to discriminate between distinct conformations of the model protein beta-lactoglobulin (BLG). Thermal- and fluoro-alcohol-induced BLG isoforms were imprinted in thin films of 3-aminophenylboronic acid on quartz crystal microbalance chips. Enhanced rebinding of the template isoform was observed in all cases when compared to the binding of nontemplate isoforms over the concentration range of 1-100 microg mL(-1). Furthermore, it was observed that the greater the changes in the secondary structure of the template protein the lower the binding of native BLG challenges to the imprint, suggesting a strong steric influence in the recognition system. This feasibility study is a first demonstration of molecular imprints for recognition of distinct conformations of the same protein.

  17. Excited State Dynamics and Semiconductor-to-Metallic Phase Transition of VO2 Thin Film

    National Research Council Canada - National Science Library

    Liu, Huimin

    2004-01-01

    .... Vanadium dioxide shows an ultrafast, passive phase transition (PT) from a monoclinic semiconductor phase to a metallic tetragonal rutile structure when the sample temperature is above 68 degrees C...

  18. Development of a platinum resistance thermometer on the silicon substrate for phase change studies

    International Nuclear Information System (INIS)

    Cai, Qingjun; Chen, Ya-Chi; Tsai, Chialun; DeNatale, Jeffrey F

    2012-01-01

    Resistance temperature detectors are commonly used measurement sensors in heat transfer studies. In many resistance temperature detectors, the platinum resistance thermometer (PRT) is chemically stable, has a wide temperature measurement range and possesses high measurement accuracy. In phase change studies of carbon nanotubes, bi-porous structures for microelectronic thermal management, 100 nm thick PRTs are developed on silicon substrates with 10 nm titanium adhesive to achieve precise and interface-free temperature measurements. After an annealing at 375 °C, the PRT samples are calibrated at a temperature range from 20 to 180 °C. Measurement hysteresis of temperature appears in thermal cycles. Electrical resistance tends to become low during all heating periods, which establishes the maximum measurement deviation of 10 °C. Experimental results from two different thin-film PRTs indicate that accurate and repeatable temperature measurements can be achieved by either reducing heating speed or using data in the cooling period. (paper)

  19. Crystallization kinetics in antimony and tellurium alloys used for phase change recording

    International Nuclear Information System (INIS)

    Kalb, J.A.

    2006-01-01

    This thesis makes a contribution to a fundamental understanding of the crystallization kinetics of amorphous and liquid phase change materials. In one project of this study, ex situ atomic force microscopy in combination with a high-precision furnace was identified as a powerful and accurate tool to determine isothermal crystallization parameters in thin films as a function of time and temperature. This method was employed for a systematic study of crystallization kinetics in sputtered amorphous Ag 0.055 In 0.065 Sb 0.59 Te 0.29 (hereafter: AgIn-SbTe), Ge 4 Sb 1 Te 5 , and Ge 1 Sb 2 Te 4 thin films used for phase change recording. The temperature dependence of the crystal nucleation rate and the crystal growth velocity were determined between 90 and 190 C by direct observation of crystals. The time dependence of the nucleation rate was also investigated. Ex situ transmission electron microscopy was used to study the crystal morphology in these alloys. In a second project, sputtered amorphous films in the compositions mentioned above were studied by differential scanning calorimetry. In a third project, droplets of molten alloys of composition Ge 12 Sb 88 , AgIn-Sb 2 Te, Ge 4 Sb 1 Te 5 and Ge 2 Sb 2 Te 5 , surrounded by a molten dehydrated B 2 O 3 flux, were undercooled to 40-80 K below their liquidus temperature in a differential thermal analyzer. The crystal-melt interfacial energy was determined from the nucleation temperature using the classical nucleation theory. (Orig.)

  20. Phase change materials and the perception of wetness.

    Science.gov (United States)

    Tiest, Wouter M Bergmann; Kosters, N Dolfine; Kappers, Astrid M L; Daanen, Hein A M

    2012-01-01

    Phase change materials (PCMs) are increasingly incorporated in textiles in order to serve as a thermal buffer when humans change from a hot to a cold environment and the reverse. Due to the absence of wetness sensors in the skin, cooling of the skin may be perceived as a sensation of wetness instead of cold. In order to investigate if this phenomenon occurs when manipulating textiles, nine subjects were asked to touch or manipulate PCM-treated and untreated fabrics. In 75% of the cases, the subjects indicated that the treated material felt wetter than the untreated material independent of the way the textiles were manipulated. We conclude that incorporating PCMs in textiles may lead to a feeling of wetness which might be uncomfortable. Therefore, we recommend investigating a change in cooling properties to minimise this feeling. This article describes a psychophysical experiment into the sensation of wetness of textiles treated with phase change materials. It was found that in 75% of the cases, subjects found the treated fabric to feel wetter than the untreated. This may affect the comfort of wearing clothes made of these textiles.

  1. Recent progresses and achievements in photovoltaic-phase change material technology: A review with special treatment on photovoltaic thermal-phase change material systems

    International Nuclear Information System (INIS)

    Islam, M.M.; Pandey, A.K.; Hasanuzzaman, M.; Rahim, N.A.

    2016-01-01

    Highlights: • Broad summary of phase change materials based cooling for photovoltaic modules. • Compendium on phase change materials that are mostly used in photovoltaic systems. • Extension of heat availability period by 75–100% with phase change material. • Heat storage potential improves by 33–50% more with phase change material. • Future trend and move in photovoltaic thermal research. - Abstract: This communication lays out an appraisal on the recent works of phase change materials based thermal management techniques for photovoltaic systems with special focus on the so called photovoltaic thermal-phase change material system. Attempt has also been made to draw wide-ranging classification of both photovoltaic and photovoltaic thermal systems and their conventional cooling or heat harvesting methods developed so far so that feasible phase change materials application area in these systems can be pointed out. In addition, a brief literature on phase change materials with particular focus on their solar application has also been presented. Overview of the researches and studies establish that using phase change materials for photovoltaic thermal control is technically viable if some issues like thermal conductivity or phase stability are properly addressed. The photovoltaic thermal-phase change material systems are found to offer 33% (maximum 50%) more heat storage potential than the conventional photovoltaic-thermal water system and that with 75–100% extended heat availability period and around 9% escalation in output. Reduction in temperature attained with photovoltaic thermal-phase change material system is better than that with regular photovoltaic-thermal water system, too. Studies also show the potential of another emerging technology of photovoltaic thermal-microencapsulated phase change material system that makes use of microencapsulated phase change materials in thermal regulation. Future focus areas on photovoltaic thermal-phase change

  2. Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

    Science.gov (United States)

    Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

    2018-02-02

    Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

  3. Polar phase transitions in heteroepitaxial stabilized La0.5Y0.5AlO3 thin films

    Science.gov (United States)

    Liu, Shenghua; Zhang, Chunfeng; Zhu, Mengya; He, Qian; Chakhalian, Jak; Liu, Xiaoran; Borisevich, Albina; Wang, Xiaoyong; Xiao, Min

    2017-10-01

    We report on the fabrication of epitaxial La0.5Y0.5AlO3 ultrathin films on (001) LaAlO3 substrates. Structural characterizations by scanning transmission electron microscopy and x-ray diffraction confirm the high quality of the film with a - b + c - AlO6 octahedral tilt pattern. Unlike either of the nonpolar parent compound, LaAlO3 and YAlO3, second harmonic generation measurements on the thin films suggest a nonpolar-polar phase transition at T c near 500 K, and a polar-polar phase transition at T a near 160 K. By fitting the angular dependence of the second harmonic intensities, we further propose that the two polar structures can be assigned to the Pmc2 1 and Pmn2 1 space group, while the high temperature nonpolar structure belongs to the Pbnm space group.

  4. Phase transformation changes in thermocycled nickel-titanium orthodontic wires.

    Science.gov (United States)

    Berzins, David W; Roberts, Howard W

    2010-07-01

    In the oral environment, orthodontic wires will be subject to thermal fluctuations. The purpose of this study was to investigate the effect of thermocycling on nickel-titanium (NiTi) wire phase transformations. Straight segments from single 27 and 35 degrees C copper NiTi (Ormco), Sentalloy (GAC), and Nitinol Heat Activated (3M Unitek) archwires were sectioned into 5mm segments (n=20). A control group consisted of five randomly selected non-thermocycled segments. The remaining segments were thermocycled between 5 and 55 degrees C with five randomly selected segments analyzed with differential scanning calorimetry (DSC; -100150 degrees C at 10 degrees C/min) after 1000, 5000, and 10,000 cycles. Thermal peaks were evaluated with results analyzed via ANOVA (alpha=0.05). Nitinol HA and Sentalloy did not demonstrate qualitative or quantitative phase transformation behavior differences. Significant differences were observed in some of the copper NiTi transformation temperatures, as well as the heating enthalpy with the 27 degrees C copper NiTi wires (p<0.05). Qualitatively, with increased thermocycling the extent of R-phase in the heating peaks decreased in the 35 degrees C copper NiTi, and an austenite to martensite peak shoulder developed during cooling in the 27 degrees C copper NiTi. Repeated temperature fluctuations may contribute to qualitative and quantitative phase transformation changes in some NiTi wires. Copyright 2010 Academy of Dental Materials. All rights reserved.

  5. Changes to oak woodland stand structure and ground flora composition caused by thinning and burning

    Science.gov (United States)

    Kinkead, Carter O.; Kabrick, John M.; Stambaugh, Michael C.; Grabner, Keith W.

    2013-01-01

    Our objective was to quantify the cumulative effects of prescribed burning and thinning on forest stocking and species composition at a woodland restoration experiment site in the Ozark Highlands of Missouri. Our study used four treatments (burn, harvest, harvest and burn, control) on three slope position and aspect combinations (south, north, ridge) replicated in three complete blocks. Harvested stands were thinned from below to 40 percent residual stocking. Two prescribed fires were applied to both burn and harvest-burn treatment units in a 5-year period. Results reflect changes that have taken place over a 6-year period, from pretreatment conditions to 1 year after the last fire. In this period, there was a 10-percent reduction in the stocking in burned stands compared to control and a 6-percent reduction in harvested and burned stands compared to harvested stands. Compared to the control, percentage ground cover of woodland indicators was seven times greater in burned stands, six times greater in harvested stands, and 22 percent greater in harvested and burned stands. Th ere was no significant (P > 0.05) interaction between aspect and treatment on stocking or ground flora cover. Th is study indicated that silvicultural treatments do achieve various goals that are common to managers who aim to restore woodland communities.

  6. Mechanical aspects of allotropic phase change at the mesoscopic scale

    International Nuclear Information System (INIS)

    Valance, St.

    2007-12-01

    The prediction of the mechanical state of steel structures submit to thermo-mechanical loading must take into account consequences of allotropic phase change. Indeed, phase change induce, at least for steels, a mechanism of TRansformation Induced Plasticity (TRIP) leading to irreversible deformation even for loading less than elastic yield limit. Homogenized analytical models generally fail to achieve a correct prediction for complex loading. In order to overcome these difficulties, we present a model achieving a sharper description of the phenomenon. The mesoscopic working scale we adopt here is the grain scale size. Hence, we consider that the behaviour of each phase is homogenous in the sense of continuous media mechanic, whereas the front is explicitly described. We work both experimentally and numerically. Experimentally, we designed a test facility enabling thermo mechanical loading of the sample under partial vacuum. Acquisition of sample surface while martensitic transformation is happening leads, under some hypothesis and thanks to Digital Image Correlation, to the partial identification of area affected by transformation. Numerically, the eXtended Finite Element Method is applied for weakly discontinuous displacement fields. Used of this method needs to numerically track the transformation front -discontinuity support. In that goal, based on level set method, we develop FEM numerical scheme enabling recognition and propagation of discontinuity support. Finally, this work is complete by an approach of driving forces introduced through Eshelbian mechanics which are dual of front velocity. (author)

  7. A phenomenological approach of solidification of polymeric phase change materials

    Science.gov (United States)

    Bahrani, Seyed Amir; Royon, Laurent; Abou, Bérengère; Osipian, Rémy; Azzouz, Kamel; Bontemps, André

    2017-01-01

    Phase Change Materials (PCMs) are widely used in thermal energy storage and thermal management systems due to their small volume for a given stored energy and their capability for maintaining nearly constant temperatures. However, their performance is limited by their low thermal conductivity and possible leaks while in the liquid phase. One solution is to imprison the PCM inside a polymer mesh to create a Polymeric Phase Change Material (PPCM). In this work, we have studied the cooling and solidification of five PPCMs with different PCMs and polymer fractions. To understand the heat transfer mechanisms involved, we have carried out micro- and macrorheological measurements in which Brownian motion of tracers embedded in PPCMs has been depicted and viscoelastic moduli have been measured, respectively. Beyond a given polymer concentration, it was shown that the Brownian motion of the tracers is limited by the polymeric chains and that the material exhibits an elastic behavior. This would suggest that heat transfer essentially occurs by conduction, instead of convection. Experiments were conducted to measure temperature variation during cooling of the five samples, and a semi-empirical model based on a phenomenological approach was proposed as a practical tool to choose and size PPCMs.

  8. Microencapsulated Phase Change Composite Materials for Energy Efficient Buildings

    Science.gov (United States)

    Thiele, Alexander

    This study aims to elucidate how phase change material (PCM)-composite materials can be leveraged to reduce the energy consumption of buildings and to provide cost savings to ratepayers. Phase change materials (PCMs) can store thermal energy in the form of latent heat when subjected to temperatures exceeding their melting point by undergoing a phase transition from solid to liquid state. Reversibly, PCMs can release this thermal energy when the system temperature falls below their solidification point. The goal in implementing composite PCM walls is to significantly reduce and time-shift the maximum thermal load on the building in order to reduce and smooth out the electricity demand for heating and cooling. This Ph.D. thesis aims to develop a set of thermal design methods and tools for exploring the use of PCM-composite building envelopes and for providing design rules for their practical implementation. First, detailed numerical simulations were used to show that the effective thermal conductivity of core-shell-matrix composites depended only on the volume fraction and thermal conductivity of the constituent materials. The effective medium approximation reported by Felske (2004) was in very good agreement with numerical predictions of the effective thermal conductivity. Second, a carefully validated transient thermal model was used to simulate microencapsulated PCM-composite walls subjected to diurnal or annual outdoor temperature and solar radiation flux. It was established that adding microencapsulated PCM to concrete walls both substantially reduced and delayed the thermal load on the building. Several design rules were established, most notably, (i) increasing the volume fraction of microencapsulated PCM within the wall increases the energy savings but at the potential expense of mechanical properties [1], (ii) the phase change temperature leading to the maximum energy and cost savings should equal the desired indoor temperature regardless of the climate

  9. Phase change heat transfer and bubble behavior observed on twisted wire heater geometries in microgravity

    International Nuclear Information System (INIS)

    Munro, Troy R.; Koeln, Justin P.; Fassmann, Andrew W.; Barnett, Robert J.; Ban, Heng

    2014-01-01

    Highlights: • Subcooled water boiled in microgravity on twists of thin wires. • Wire twisting creates heat transfer enhancements because of high local temperatures. • A preliminary version of a new bubble dynamics method is discussed. • A critical distance that fluid must be superheated for boiling onset is presented. - Abstract: Phase change is an effective method of transferring heat, yet its application in microgravity thermal management systems requires greater understanding of bubble behavior. To further this knowledge base, a microgravity boiling experiment was performed (floating) onboard an aircraft flying in a parabolic trajectory to study the effect of surface geometry and heat flux on phase change heat transfer in a pool of subcooled water. A special emphasis was the investigation of heat transfer enhancement caused by modifying the surface geometry through the use of a twist of three wires and a twist of four wires. A new method for bubble behavior analysis was developed to quantify bubble growth characteristics, which allows a quantitative comparison of bubble dynamics between different data sets. It was found that the surface geometry of the three-wire twist enhanced heat transfer by reducing the heat flux needed for bubble incipience and the average wire temperature in microgravity. Simulation results indicated that increased local superheating in wire crevices may be responsible for the change of bubble behavior seen as the wire geometry configuration was varied. The convective heat transfer rate, in comparison to ground experiments, was lower for microgravity at low heating rates, and higher at high heating rates. This study provides insights into the role of surface geometry on superheating behavior and presents an initial version of a new bubble behavior analysis method. Further research on these topics could lead to new designs of heater surface geometries using phase change heat transfer in microgravity applications

  10. Utilizing thin-film solid-phase extraction to assess the effect of organic carbon amendments on the bioavailability of DDT and dieldrin to earthworms

    Science.gov (United States)

    Andrade, Natasha A.; Centofanti, Tiziana; McConnell, Laura L.; Hapeman, Cathleen J.; Torrents, Alba; Anh, Nguyen; Beyer, W. Nelson; Chaney, Rufus L.; Novak, Jeffrey M.; Anderson, Marya O.; Cantrell, Keri B.

    2014-01-01

    Improved approaches are needed to assess bioavailability of hydrophobic organic compounds in contaminated soils. Performance of thin-film solid-phase extraction (TF-SPE) using vials coated with ethylene vinyl acetate was compared to earthworm bioassay (Lumbricus terrestris). A DDT and dieldrin contaminated soil was amended with four organic carbon materials to assess the change in bioavailability. Addition of organic carbon significantly lowered bioavailability for all compounds except for 4,4′-DDT. Equilibrium concentrations of compounds in the polymer were correlated with uptake by earthworms after 48d exposure (R2 = 0.97; p 40yr of aging. Results show that TF-SPE can be useful in examining potential risks associated with contaminated soils and to test effectiveness of remediation efforts.

  11. Recovery of oscillatory magneto-resistance in phase separated La0.3Pr0.4Ca0.3MnO3 epitaxial thin films

    International Nuclear Information System (INIS)

    Alagoz, H. S.; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H.; Jung, J.; Prasad, B.; Egilmez, M.

    2013-01-01

    In-plane angular dependent magneto-resistance has been studied in La 0.3 Pr 0.4 Ca 0.3 MnO 3 (LPCMO) manganite thin films deposited on the (100) oriented NdGaO 3 , and (001) oriented SrTiO 3 and LaAlO 3 substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos 2 θ/sin 2 θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity

  12. ReWritable Data Storage on DVD by Using Phase Change Technology

    Science.gov (United States)

    Kleine, H.; Martin, F.; Kapeller, M.; Cord, B.; Ebinger, H.

    It is expected that the next few years the VHS casette will be replaced by rewritable Digital Versatile Discs (DVD) for home video recording. At this moment three different standards DVD+RW, DVD-RW and DVD-RAM exist, out of which the DVD+RW is expected to dominate the market in Europe and the United States. The disc holds 4.7 GB of computer data, which is equivalent to several hours of high quality video content. At the heart of the disc is a thin film layer stack with a special phase change recording layer. By proper laser irradiation the disc can be overwritten up to 1000 times without noticeable quality loss. A shelf lifetime of 20-50 years is anticipated. With these characteristics the disc is well suited for consumer applications. The present article illuminates how a process engineer can control the disc recording sensitivity, the recording speed and the number of overwriting cycles by the design of the thin film layer stack.

  13. Large electrically induced height and volume changes in poly(3,4- ethylenedioxythiophene) /poly(styrenesulfonate) thin films

    NARCIS (Netherlands)

    Charrier, D.S.H.; Janssen, R.A.J.; Kemerink, M.

    2010-01-01

    We demonstrate large, partly reversible height and volume changes of thin films of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) on the anode of interdigitating gold electrodes under ambient conditions by applying an electrical bias. The height and volume changes were monitored

  14. Three-dimensional nanomechanical mapping of amorphous and crystalline phase transitions in phase-change materials.

    Science.gov (United States)

    Grishin, Ilja; Huey, Bryan D; Kolosov, Oleg V

    2013-11-13

    The nanostructure of micrometer-sized domains (bits) in phase-change materials (PCM) that undergo switching between amorphous and crystalline phases plays a key role in the performance of optical PCM-based memories. Here, we explore the dynamics of such phase transitions by mapping PCM nanostructures in three dimensions with nanoscale resolution by combining precision Ar ion beam cross-sectional polishing and nanomechanical ultrasonic force microscopy (UFM) mapping. Surface and bulk phase changes of laser written submicrometer to micrometer sized amorphous-to-crystalline (SET) and crystalline-to-amorphous (RESET) bits in chalcogenide Ge2Sb2Te5 PCM are observed with 10-20 nm lateral and 4 nm depth resolution. UFM mapping shows that the Young's moduli of crystalline SET bits exceed the moduli of amorphous areas by 11 ± 2%, with crystalline content extending from a few nanometers to 50 nm in depth depending on the energy of the switching pulses. The RESET bits written with 50 ps pulses reveal shallower depth penetration and show 30-50 nm lateral and few nanometer vertical wavelike topography that is anticorrelated with the elastic modulus distribution. Reverse switching of amorphous RESET bits results in the full recovery of subsurface nanomechanical properties accompanied with only partial topography recovery, resulting in surface corrugations attributed to quenching. This precision sectioning and nanomechanical mapping approach could be applicable to a wide range of amorphous, nanocrystalline, and glass-forming materials for 3D nanomechanical mapping of amorphous-crystalline transitions.

  15. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  16. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga

    2014-10-13

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  17. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga; Ganapathysubramanian, Baskar

    2014-01-01

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  18. Phase competition in the growth of SrCoOx/LaAlO3 thin films

    Science.gov (United States)

    Zhang, Jie; Meng, Dechao; Huang, Haoliang; Cai, Honglei; Huang, Qiuping; Wang, Jianlin; Yang, Yuanjun; Zhai, Xiaofang; Fu, Zhengping; Lu, Yalin

    2018-02-01

    The reversible topotactic phase transformation between brownmillerite SrCoO2.5 to perovskite SrCoO3 has attracted more and more attention for potential applications as solid oxide fuels and electrolysis cells. However, the relatively easy transformation result from small thermal stable energy barriers between the two phases leads to unstable the structures. In the paper, amounts of SrCoO3-δ films have been prepared by pulsed laser deposition at optimized growth conditions with the temperature range of 590-720°C. The X-ray diffraction (XRD) results demonstrated that a phase competition emerged around 650°C. The Gibbs free energies of two phases at high temperature revealed the difference of stability of these two phases under different growth temperature. The optical spectroscopies and X-ray photoelectron spectroscopies were used to verify the electronic structure and chemical state differences between the two phases with distinct crystal structures.

  19. A phase transition close to room temperature in BiFeO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kreisel, J; Jadhav, P; Chaix-Pluchery, O [Laboratoire des Materiaux et du Genie Physique, Grenoble INP, CNRS, Minatec, 3, parvis Louis Neel, 38016 Grenoble (France); Varela, M [Departamento Fisica Aplicada i Optica, Universitat de Barcelona, Carrer MartI i Franques 1. 08028 Campus UAB, Bellaterra 08193 (Spain); Dix, N; Sanchez, F; Fontcuberta, J, E-mail: jens.kreisel@grenoble-inp.fr [Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193 (Spain)

    2011-08-31

    BiFeO{sub 3} (BFO) multiferroic oxide has a complex phase diagram that can be mapped by using appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, display a reversible temperature-induced phase transition at about 100 deg. C, and thus close to room temperature. (fast track communication)

  20. Changes in Soil Carbon and Moisture over the Six Year after Thinning of a Natural Oak Forest

    Science.gov (United States)

    Kim, S.; Han, S. H.; Li, G.; Chang, H.; Kim, H. J.; Son, Y.

    2017-12-01

    The objective of this study was to assess the effects of thinning on soil carbon (C) in a natural oak forest in central Korea. The study forest received three different thinning treatments consisting of un-thinned control (UTC) and two thinning intensities (15% and 30% basal area reductions) in March in 2010. Precipitation near the study forest maintained the normal level from 2010 to 2013 (average 1,400 mm year-1), but abnormally decreased from 2014 to 2016 (average 800 mm year-1). To measure total soil C stock and soil moisture conditions, soils were collected from 0-10, 10-20, and 20-30 cm depths in June, 2010, 2013, and 2016, respectively. Soil microbial biomass C and C-cycling enzymes (β-glucosidase, cellobiohydrolase, β-xylosidase, phenol oxidase, and peroxidase) at 0-10 cm depth were determined in June, 2016. Total soil C stock at 0-30 cm depth increased throughout the study period, whereas soil moisture decreased at all depths from 2013 to 2016. Both thinning treatments had higher total soil C stock at 0-30 cm depth and moisture at 10-20 and 20-30 cm depths than the UTC in 2013 and 2016, whereas the treatments showed no effects in 2010. Microbial biomass C at 0-10 cm depth in 2016 also increased because of the thinning treatments, which was positively correlated to total soil C stock. However, any effects of thinning on C-cycling enzymes were not significant. Our results indicate that thinning could contribute to relieving the impacts of decreasing precipitation by enhancing the storage of soil moisture. Furthermore, the change in total soil C stock under thinning might result from the stimulation of microbial potential for retaining organic C as a form of biomass. This study was supported by the Ministry of Environment (2014001810002) and the National Institute of Forest Science of Korea (FM0101-2009-01).

  1. Pulse number control of electrical resistance for multi-level storage based on phase change

    International Nuclear Information System (INIS)

    Nakayama, K; Takata, M; Kasai, T; Kitagawa, A; Akita, J

    2007-01-01

    Phase change nonvolatile memory devices composed of SeSbTe chalcogenide semiconductor thin film were fabricated. The resistivity of the SeSbTe system was investigated to apply to multi-level data storage. The chalcogenide semiconductor acts as a programmable resistor that has a large dynamic range. The resistance of the chalcogenide semiconductor can be set to intermediate resistances between the amorphous and crystalline states using electric pulses of a specified power, and it can be controlled by repetition of the electric pulses. The size of the memory cell used in this work is 200 nm thick with a contact area of 1 μm diameter. The resistance of the chalcogenide semiconductor gradually varies from 41 kΩ to 840 Ω within octal steps. The resistance of the chalcogenide semiconductor decreases with increasing number of applied pulses. The step-down characteristic of the resistance can be explained as the crystalline region of the active phase change region increases with increasing number of applied pulses. The extent of crystallization was also estimated by the overall resistivity of the active region of the memory cell

  2. Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

    International Nuclear Information System (INIS)

    Young, Robert M.; El-Hinnawy, Nabil; Borodulin, Pavel; Wagner, Brian P.; King, Matthew R.; Jones, Evan B.; Howell, Robert S.; Lee, Michael J.

    2014-01-01

    We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W

  3. Coherent gigahertz phonons in Ge₂Sb₂Te₅ phase-change materials.

    Science.gov (United States)

    Hase, Muneaki; Fons, Paul; Kolobov, Alexander V; Tominaga, Junji

    2015-12-09

    Using ≈40 fs ultrashort laser pulses, we investigate the picosecond acoustic response from a prototypical phase change material, thin Ge2Sb2Te5 (GST) films with various thicknesses. After excitation with a 1.53 eV-energy pulse with a fluence of ≈5 mJ cm(-2), the time-resolved reflectivity change exhibits transient electronic response, followed by a combination of exponential-like strain and coherent acoustic phonons in the gigahertz (GHz) frequency range. The time-domain shape of the coherent acoustic pulse is well reproduced by the use of the strain model by Thomsen et al 1986 (Phys. Rev. B 34 4129). We found that the decay rate (the inverse of the relaxation time) of the acoustic phonon both in the amorphous and in the crystalline phases decreases as the film thickness increases. The thickness dependence of the acoustic phonon decay is well modeled based on both phonon-defect scattering and acoustic phonon attenuation at the GST/Si interface, and it is revealed that those scattering and attenuation are larger in crystalline GST films than those in amorphous GST films.

  4. Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

    Energy Technology Data Exchange (ETDEWEB)

    Young, Robert M., E-mail: rm.young@ngc.com; El-Hinnawy, Nabil; Borodulin, Pavel; Wagner, Brian P.; King, Matthew R.; Jones, Evan B.; Howell, Robert S.; Lee, Michael J. [Northrop Grumman Corp., Electronic Systems, P.O. Box 1521, Baltimore, Maryland 21203 (United States)

    2014-08-07

    We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W.

  5. Thermal analysis of a double layer phase change material floor

    International Nuclear Information System (INIS)

    Jin Xing; Zhang Xiaosong

    2011-01-01

    Phase change materials (PCMs) can be used to shift the cooling or heating load from the peak period to the off-peak period. In this paper, a new double layer phase change material (PCM) floor is put forward. The two layers of PCM have different melting temperature. The system is used to store heat or cold energy in the off-peak period and release them in the peak period during heating or cooling. According to the numerical model built in this paper, the thermal performances of the floor are analyzed. The results show that the optimal melting temperatures of PCMs exist. The fluctuations of the floor surface temperatures and the heat fluxes will be reduced and the system still can provide a certain amount of heat or cold energy after the heat pump or chiller has been turned off for a long time. Compared to the floor without PCM, the energy released by the floor with PCM in peak period will be increased by 41.1% and 37.9% during heating and cooling when the heat of fusion of PCM is 150 kJ/kg. - Highlights: → A new double layer phase change material floor is put forward. → The system is used to store heat or cold energy in the off-peak period and release them in the peak period during heating or cooling. → The optimal melting temperatures of PCMs in the system exist. → The heat and cold energy released by the floor with PCM in peak period can be increased by 41.1% and 37.9%.

  6. Heat transfer characteristics of building walls using phase change material

    Science.gov (United States)

    Irsyad, M.; Pasek, A. D.; Indartono, Y. S.; Pratomo, A. W.

    2017-03-01

    Minimizing energy consumption in air conditioning system can be done with reducing the cooling load in a room. Heat from solar radiation which passes through the wall increases the cooling load. Utilization of phase change material on walls is expected to decrease the heat rate by storing energy when the phase change process takes place. The stored energy is released when the ambient temperature is low. Temperature differences at noon and evening can be utilized as discharging and charging cycles. This study examines the characteristics of heat transfer in walls using phase change material (PCM) in the form of encapsulation and using the sleeve as well. Heat transfer of bricks containing encapsulated PCM, tested the storage and released the heat on the walls of the building models were evaluated in this study. Experiments of heat transfer on brick consist of time that is needed for heat transfer and thermal conductivity test as well. Experiments were conducted on a wall coated by PCM which was exposed on a day and night cycle to analyze the heat storage and heat release. PCM used in these experiments was coconut oil. The measured parameter is the temperature at some points in the brick, walls and ambient temperature as well. The results showed that the use of encapsulation on an empty brick can increase the time for thermal heat transfer. Thermal conductivity values of a brick containing encapsulated PCM was lower than hollow bricks, where each value was 1.3 W/m.K and 1.6 W/m.K. While the process of heat absorption takes place from 7:00 am to 06:00 pm, and the release of heat runs from 10:00 pm to 7:00 am. The use of this PCM layer can reduce the surface temperature of the walls of an average of 2°C and slows the heat into the room.

  7. Tuning Eu"3"+ emission in europium sesquioxide films by changing the crystalline phase

    International Nuclear Information System (INIS)

    Mariscal, A.; Quesada, A.; Camps, I.; Palomares, F.J.; Fernández, J.F.; Serna, R.

    2016-01-01

    Highlights: • PLD production of high quality europium sesquioxide (Eu_2O_3) films. • The deposition of Al_2O_3 capping and/or buffer layers modifies the crystallization for Eu_2O_3 films upon annealing. • The formation of cubic or monoclinic phases can be favored. • Eu"3"+ emission tuning is achieved as a consequence of crystal field effects. - Abstract: We report the growth of europium sesquioxide (Eu_2O_3) thin films by pulsed laser deposition (PLD) in vacuum at room temperature from a pure Eu_2O_3 ceramic bulk target. The films were deposited in different configurations formed by adding capping and/or buffer layers of amorphous aluminum oxide (a-Al_2O_3). The optical properties, refractive index and extinction coefficient of the as deposited Eu_2O_3 layers were obtained. X-ray photoelectron spectroscopy (XPS) measurements were done to assess its chemical composition. Post-deposition annealing was performed at 500 °C and 850 °C in air in order to achieve the formation of crystalline films and to accomplish photoluminescence emission. According to the analysis of X-ray diffraction (XRD) spectra, cubic and monoclinic phases were formed. It is found that the relative amount of the phases is related to the different film configurations, showing that the control over the crystallization phase can be realized by adequately designing the structures. All the films showed photoluminescence emission peaks (under excitation at 355 nm) that are attributed to the intra 4f-transitions of Eu"3"+ ions. The emission spectral shape depends on the crystalline phase of the Eu_2O_3 layer. Specifically, changes in the hypersensitive "5D_0 → "7F_2 emission confirm the strong influence of the crystal field effect on the Eu"3"+ energy levels.

  8. Utilizing thin-film solid-phase extraction to assess the effect of organic carbon amendments on the bioavailability of DDT and dieldrin to earthworms

    International Nuclear Information System (INIS)

    Andrade, Natasha A.; Centofanti, Tiziana; McConnell, Laura L.; Hapeman, Cathleen J.; Torrents, Alba; Nguyen, Anh; Beyer, W. Nelson; Chaney, Rufus L.; Novak, Jeffrey M.; Anderson, Marya O.; Cantrell, Keri B.

    2014-01-01

    Improved approaches are needed to assess bioavailability of hydrophobic organic compounds in contaminated soils. Performance of thin-film solid-phase extraction (TF-SPE) using vials coated with ethylene vinyl acetate was compared to earthworm bioassay (Lumbricus terrestris). A DDT and dieldrin contaminated soil was amended with four organic carbon materials to assess the change in bioavailability. Addition of organic carbon significantly lowered bioavailability for all compounds except for 4,4′-DDT. Equilibrium concentrations of compounds in the polymer were correlated with uptake by earthworms after 48d exposure (R 2 = 0.97; p 40yr of aging. Results show that TF-SPE can be useful in examining potential risks associated with contaminated soils and to test effectiveness of remediation efforts. -- Highlights: • Bioavailability of pesticides in soil were assessed using TF-SPE and earthworms. • Soil from a historical orchard was used to examine aged residues of dieldrin and DDT. • TF-SPE results were strongly correlated with earthworm bioaccumulation factors. • Ethylene vinyl acetate polymer has sorptive capacity similar to earthworm lipid. • TF-SPE useful to estimate bioavailability of hydrophobic organic pesticides in soil. -- Capsule A thin-film polymer sampler proved to be efficient in estimating the differences in bioavailability to earthworms in a soil treated with organic amendments

  9. Polymeric compositions incorporating polyethylene glycol as a phase change material

    Science.gov (United States)

    Salyer, Ival O.; Griffen, Charles W.

    1989-01-01

    A polymeric composition comprising a polymeric material and polyethylene glycol or end-capped polyethylene glycol as a phase change material, said polyethylene glycol and said end-capped polyethylene glycol having a molecular weight greater than about 400 and a heat of fusion greater than about 30 cal/g; the composition is useful in making molded and/or coated materials such as flooring, tiles, wall panels and the like; paints containing polyethylene glycols or end-capped polyethylene glycols are also disclosed.

  10. Thermal energy storage using phase change materials fundamentals and applications

    CERN Document Server

    Fleischer, Amy S

    2015-01-01

    This book presents a comprehensive introduction to the use of solid‐liquid phase change materials to store significant amounts of energy in the latent heat of fusion. The proper selection of materials for different applications is covered in detail, as is the use of high conductivity additives to enhance thermal diffusivity. Dr. Fleischer explores how applications of PCMS have expanded over the past 10 years to include the development of high efficiency building materials to reduce heating and cooling needs, smart material design for clothing, portable electronic systems thermal management, solar thermal power plant design and many others. Additional future research directions and challenges are also discussed.

  11. Multistate and phase change selection in constitutional multivalent systems.

    Science.gov (United States)

    Barboiu, Mihail

    2012-01-01

    Molecular architectures and materials can be constitutionally self-sorted in the presence of different biomolecular targets or external physical stimuli or chemical effectors, thus responding to an external selection pressure. The high selectivity and specificity of different bioreceptors or self-correlated internal interactions may be used to describe the complex constitutional behaviors through multistate component selection from a dynamic library. The self-selection may result in the dynamic amplification of self-optimized architectures during the phase change process. The sol-gel resolution of dynamic molecular/supramolecular libraries leads to higher self-organized constitutional hybrid materials, in which organic (supramolecular)/inorganic domains are reversibily connected.

  12. Phase change thermal storage for a solar total energy system

    Science.gov (United States)

    Rice, R. E.; Cohen, B. M.

    1978-01-01

    An analytical and experimental program is being conducted on a one-tenth scale model of a high-temperature (584 K) phase-change thermal energy storage system for installation in a solar total energy test facility at Albuquerque, New Mexico, U.S.A. The thermal storage medium is anhydrous sodium hydroxide with 8% sodium nitrate. The program will produce data on the dynamic response of the system to repeated cycles of charging and discharging simulating those of the test facility. Data will be correlated with a mathematical model which will then be used in the design of the full-scale system.

  13. Formation of Ag nanoparticles in percolative Ag–PbTiO3 composite thin films through lead-rich Ag–Pb alloy particles formed as transitional phase

    International Nuclear Information System (INIS)

    Hu, Tao; Wang, Zongrong; Su, Yanbo; Tang, Liwen; Shen, Ge; Song, Chenlu; Han, Gaorong; Weng, Wenjian; Ma, Ning; Du, Piyi

    2012-01-01

    The Ag nanoparticle dispersed percolative PbTiO 3 ceramic thin film was prepared in situ by sol–gel method with excess lead introduced into a sol precursor. The influence of excess lead and the heat treatment time on the formation of Ag nanoparticles was investigated by energy dispersive X-ray spectra, scanning electron microscopy, X-ray diffraction, and ultraviolet–visible absorption spectra. Results showed that the excess lead introduced into the sol precursor was in favor of the crystallization of the thin film and in favor of formation of the perovskite phase without the pyrochlore phase. Lead-rich Ag–Pb alloy particles first formed in the thin films and then decomposed to become large numbers of Ag nanoparticles of about 3 nm in size in the thin films when the heat treatment time was longer than 2 min. The content of the Ag nanoparticles increased with increasing the heat treatment time. The percolative behavior appears typically in the Ag nanoparticle dispersed thin films. The dielectric constant of the thin film was about 3 times of that without Ag nanoparticles. - Highlights: ► The Ag nanoparticles formed in the PbTiO 3 percolative ceramic thin film. ► The Ag–Pb alloy particles formed as transitional phase during thin film preparation. ► The lead-rich Ag–Pb alloy particles decomposed to form Ag nanoparticles in the film. ► Permittivity of the thin film is 3 times higher than that without Ag nanoparticles.

  14. Kinetic and thermodynamic aspects of crystallization in the phase-change material Ge{sub 15}Sb{sub 85}

    Energy Technology Data Exchange (ETDEWEB)

    Zalden, Peter; Klein, Michael; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Coulet, Vanessa [IM2NP - UMR CNRS 6242, Aix-Marseille Universite, Marseille (France); Bichara, Christophe [CINaM - UPR CNRS 3118, Marseille (France)

    2009-07-01

    Phase-change materials exhibit a very rare combination of properties as they do not only show crystallization on the nanosecond time scale but also show a pronounced change of the optical reflectivity and the electronic resistivity upon crystallization. This property combination is already exploited in rewritable optical data storage and is explored in phase-change memories (PCM), which are considered to be the most promising candidate for future non-volatile electronic data storage. In this study, structural modifications in sputtered thin films during the transition from the as-deposited amorphous to the crystalline phase are analysed, employing a combination of differential scanning calorimetry and X-ray diffraction. This survey includes a systematic study of heat capacities and transition temperatures for different annealing conditions in the amorphous and partially crystallized state. In addition, diffractograms have been recorded ex-situ during different stages of the thermal treatment. These results indicate a segregation of a Ge-rich phase. A comparison to conventional tellurium based phase-change materials is presented.

  15. Observation of chemical separation of In{sub 3}Sb{sub 1}Te{sub 2} thin film during phase transition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y.M.; Baik, J.; Shin, H.-J. [Beamline Division, Pohang Accelerator Laboratory, POSTECH, Pohang 790-784 (Korea, Republic of); Kim, Y.S. [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Yoon, S.G., E-mail: sgyoon@cnu.ac.kr [Brain Korea 21 Project (BK21) and Department of Materials Engineering, Chungnam University, Daejeon 305-764 (Korea, Republic of); Jung, M.-C., E-mail: mcjung@oist.jp [Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa 904-0495 (Japan); Qi, Y.B. [Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa 904-0495 (Japan)

    2014-02-15

    We investigated the chemical states of In{sub 3}Sb{sub 1}Te{sub 2} (IST) thin film using high-resolution X-ray photoelectron spectroscopy (HRXPS) with the synchrotron radiation during in-situ annealing in ultra-high vacuum. To obtain the oxygen-free amorphous IST (a-IST), we performed the mild Ne{sup +} ion sputtering. And also we confirmed the relative a-IST stoichiometry to be 54%:17%:29% based on HRXPS data. At the first and second phase transition temperatures of 350 and 400 °C, we observed the dramatic changes of chemical states from a-IST to InSb and the mixture of crystalline-IST and InTe, respectively. There was a depletion of Sb atoms on the surface after annealing at 750 °C. We assume that Sb atom is a key for the phase transition in IST. However, chemical state of the Sb in IST is unstable during the phase transition and it will be caused with the non-reversible process by this structural instability.

  16. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  17. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-01

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

  18. Automated baseline change detection phase I. Final report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-12-01

    The Automated Baseline Change Detection (ABCD) project is supported by the DOE Morgantown Energy Technology Center (METC) as part of its ER&WM cross-cutting technology program in robotics. Phase 1 of the Automated Baseline Change Detection project is summarized in this topical report. The primary objective of this project is to apply robotic and optical sensor technology to the operational inspection of mixed toxic and radioactive waste stored in barrels, using Automated Baseline Change Detection (ABCD), based on image subtraction. Absolute change detection is based on detecting any visible physical changes, regardless of cause, between a current inspection image of a barrel and an archived baseline image of the same barrel. Thus, in addition to rust, the ABCD system can also detect corrosion, leaks, dents, and bulges. The ABCD approach and method rely on precise camera positioning and repositioning relative to the barrel and on feature recognition in images. In support of this primary objective, there are secondary objectives to determine DOE operational inspection requirements and DOE system fielding requirements.

  19. Automated baseline change detection phase I. Final report

    International Nuclear Information System (INIS)

    1995-12-01

    The Automated Baseline Change Detection (ABCD) project is supported by the DOE Morgantown Energy Technology Center (METC) as part of its ER ampersand WM cross-cutting technology program in robotics. Phase 1 of the Automated Baseline Change Detection project is summarized in this topical report. The primary objective of this project is to apply robotic and optical sensor technology to the operational inspection of mixed toxic and radioactive waste stored in barrels, using Automated Baseline Change Detection (ABCD), based on image subtraction. Absolute change detection is based on detecting any visible physical changes, regardless of cause, between a current inspection image of a barrel and an archived baseline image of the same barrel. Thus, in addition to rust, the ABCD system can also detect corrosion, leaks, dents, and bulges. The ABCD approach and method rely on precise camera positioning and repositioning relative to the barrel and on feature recognition in images. In support of this primary objective, there are secondary objectives to determine DOE operational inspection requirements and DOE system fielding requirements

  20. Thin films of preparation SnOx by evaporation and pulverization reactive in vapor phase

    International Nuclear Information System (INIS)

    Solis, J.; Estrada, W.; Soares, M.; Schreiner, W.

    1993-01-01

    In this work we obtained SnO x thin films by reactive evaporation. The structure and composition of the films were characterized by x-ray diffraction and Moessbauer spectroscopy. The samples as deposited present different kind of microstructures depending on the parameters deposition, such as substrate temperature and oxygen pressure. In general the samples present three pushes: Sn, SnO and SnO 2 . When the samples are subjected to heat treatment, the as deposited SnO x finally converts to SnO 2 . (authors) 10 refs., 4 figs

  1. Use of two-phase aqueous systems based on water-soluble polymers in thin-layer and extraction chromatography for recovery and separtion of actinides

    International Nuclear Information System (INIS)

    Molochnikova, N.P.; Shkinev, V.M.; Myasoedov, B.F.

    1995-01-01

    The feasibility has been demonstrated of using two-phase aqueous systems based on water-soluble polymers, polyethylene glycol and dextran sulfate, in thin-layer and extraction chromatography for recovery and separation of actinides. A convenient method has been proposed for continuous recovery of 239 Np from 243 Am, originating from differences in sorption of tri- and pentavalent actinides from sulfate solutions containing potassium phosphotungstate by silica gel impregnated with polyethylene glycol. New plates for thin-layer chromatography using water-soluble polymers have been developed. These plates were used to study behavior of americium in various oxidation states in thin sorbent layers

  2. Changes in soil respiration after thinning activities in dense Aleppo pine forests

    Science.gov (United States)

    Llovet, Joan; Alonso, Macià; Cerdà, Artemi

    2015-04-01

    Forest fires are a widespread perturbation in Mediterranean areas, and they have tended to increase during the last decades (Pausas, 2004; Moreno et al, 1998). Aleppo pine (Pinus halepensis Mill) is dominant specie in some forest landscapes of western Mediterranean Basin, due to its capacity to colonize abandoned fields, and also due to afforestation practices mainly performed during the 20th century (Ruiz Navarro et al., 2009). Aleppo pine tends to die as consequence of forest fires, although it is able to disperse a high quantity of seeds which easily germinates. These dispersion and germination can result in dense forests with high inter and intra-specific competition, low diversity, low growth, and high fuel accumulation, increasing the risk of new forest fires. These forests of high density present ecological problems and management difficulties that require preventive treatments. Thinning treatments are common in these types of communities, but the management has to be oriented towards strengthening their functions. In the context of global change, better understandings of the implications of forest management practices in the carbon cycle are necessary. The objective of this study was to examine the evolution of seasonal soil respiration after treatment of selective thinning in dense Aleppo pine forests. The study area covers three localities placed in the Valencian Community (E Spain) affected by a forest fire in 1994. Thinning activities were done 16 years after the fire, reducing pine density from around 100,000 individuals per hectare to around 900 individuals per hectare. Soil respiration was measured in situ with a portable soil respiration instrument (LI-6400, LiCor, Lincoln, NB, USA) fitted with a soil respiration chamber (6400-09, LiCor, Lincoln, NB, USA). We installed 12 plots per treatment (control and thinned) and locality, being a total of 72 plots. We carried out 13 measurements covering a period of one year. We also estimated other related

  3. Reversible Changes in Resistance of Perovskite Nickelate NdNiO3 Thin Films Induced by Fluorine Substitution.

    Science.gov (United States)

    Onozuka, Tomoya; Chikamatsu, Akira; Katayama, Tsukasa; Hirose, Yasushi; Harayama, Isao; Sekiba, Daiichiro; Ikenaga, Eiji; Minohara, Makoto; Kumigashira, Hiroshi; Hasegawa, Tetsuya

    2017-03-29

    Perovskite nickel oxides are of fundamental as well as technological interest because they show large resistance modulation associated with phase transition as a function of the temperature and chemical composition. Here, the effects of fluorine doping in perovskite nickelate NdNiO 3 epitaxial thin films are investigated through a low-temperature reaction with polyvinylidene fluoride as the fluorine source. The fluorine content in the fluorinated NdNiO 3-x F x films is controlled with precision by varying the reaction time. The fully fluorinated film (x ≈ 1) is highly insulating and has a bandgap of 2.1 eV, in contrast to NdNiO 3 , which exhibits metallic transport properties. Hard X-ray photoelectron and soft X-ray absorption spectroscopies reveal the suppression of the density of states at the Fermi level as well as the reduction of nickel ions (valence state changes from +3 to +2) after fluorination, suggesting that the strong Coulombic repulsion in the Ni 3d orbitals associated with the fluorine substitution drives the metal-to-insulator transition. In addition, the resistivity of the fluorinated films recovers to the original value for NdNiO 3 after annealing in an oxygen atmosphere. By application of the reversible fluorination process to transition-metal oxides, the search for resistance-switching materials could be accelerated.

  4. Analysis of Lipoplex Structure and Lipid Phase Changes

    Energy Technology Data Exchange (ETDEWEB)

    Koynova, Rumiana

    2012-07-18

    Efficient delivery of genetic material to cells is needed for tasks of utmost importance in the laboratory and clinic, such as gene transfection and gene silencing. Synthetic cationic lipids can be used as delivery vehicles for nucleic acids and are now considered the most promising nonviral gene carriers. They form complexes (lipoplexes) with the polyanionic nucleic acids. A critical obstacle for clinical application of the lipid-mediated DNA delivery (lipofection) is its unsatisfactory efficiency for many cell types. Understanding the mechanism of lipid-mediated DNA delivery is essential for their successful application, as well as for a rational design and synthesis of novel cationic lipoid compounds for enhanced gene delivery. A viewpoint now emerging is that the critical factor in lipid-mediated transfection is the structural evolution of lipoplexes within the cell, upon interacting and mixing with cellular lipids. In particular, recent studies showed that the phase evolution of lipoplex lipids upon interaction and mixing with membrane lipids appears to be decisive for transfection success: specifically, lamellar lipoplex formulations, which were readily susceptible to undergoing lamellar-nonlamellar phase transition upon mixing with cellular lipids and were found rather consistently associated with superior transfection potency, presumably as a result of facilitated DNA release. Thus, understanding the lipoplex structure and the phase changes upon interacting with membrane lipids is important for the successful application of the cationic lipids as gene carriers.

  5. Subscale Water Based Phase Change Material Heat Exchanger Development

    Science.gov (United States)

    Sheth, Rubik; Hansen, Scott

    2016-01-01

    Supplemental heat rejection devices are required in many spacecraft as the radiators are not sized to meet the full heat rejection demand. One means of obtaining additional heat rejection is through the use of phase change material heat exchangers (PCM HX's). PCM HX's utilize phase change to store energy in unfavorable thermal environments (melting) and reject the energy in favorable environments (freezing). Traditionally, wax has been used as a PCM on spacecraft. However, water is an attractive alternative because it is capable of storing about 40% more energy per unit mass due to its higher latent heat of fusion. The significant problem in using water as a PCM is its expansion while freezing, leading to structural integrity concerns when housed in an enclosed heat exchanger volume. Significant investigation and development has taken place over the past five years to understand and overcome the problems associated with water PCM HX's. This paper reports on the final efforts by Johnson Space Center's Thermal Systems Branch to develop a water based PCM HX. The test article developed and reported on is a subscale version of the full-scale water-based PCM HX's constructed by Mezzo Technologies. The subscale unit was designed by applying prior research on freeze front propagation and previous full-scale water PCM HX development. Design modifications to the subscale unit included use of urethane bladder, decreased aspect ratio, perforated protection sheet, and use of additional mid-plates. Testing of the subscale unit was successful and 150 cycles were completed without fail.

  6. Analysis of wallboard containing a phase change material

    Science.gov (United States)

    Tomlinson, J. J.; Heberle, D. P.

    Phase change materials (PCMs) used on the interior of buildings hold the promise for improved thermal performance by reducing the energy requirements for space conditioning and by improving thermal comfort by reducing temperature swings inside the building. Efforts are underway to develop a gypsum wallboard containing a hydrocarbon PCM. With a phase change temperature in the room temperature range, the PCM wallboard adds substantially to the thermal mass of the building while serving the same architectural function as conventional wallboard. To determine the thermal and economic performance of this PCM wallboard, the Transient Systems Simulation Program (TRNSYS) was modified to accommodate walls that are covered with PCM plasterboard, and to apportion the direct beam solar radiation to interior surfaces of a building. The modified code was used to simulate the performance of conventional and direct-gain passive solar residential-sized buildings with and without PCM wallboard. Space heating energy savings were determined as a function of PCM wallboard characteristics. Thermal comfort improvements in buildings containing the PCM were qualified in terms of energy savings. The report concludes with a present worth economic analysis of these energy savings and arrives at system costs and economic payback based on current costs of PCMs under study for the wallboard application.

  7. Portable Thermoelectric Power Generator Coupled with Phase Change Material

    Directory of Open Access Journals (Sweden)

    Lim Chong C.

    2014-07-01

    Full Text Available Solar is the intermittent source of renewable energy and all thermal solar systems having a setback on non-functioning during the night and cloudy environment. This paper presents alternative solution for power generation using thermoelectric which is the direct conversion of temperature gradient of hot side and cold side of thermoelectric material to electric voltage. Phase change material with latent heat effect would help to prolong the temperature gradient across thermoelectric material for power generation. Besides, the concept of portability will enable different power source like solar, wasted heat from air conditioner, refrigerator, stove etc, i.e. to create temperature different on thermoelectric material for power generation. Furthermore, thermoelectric will generate direct current which is used by all the gadgets like Smartphone, tablet, laptop etc. The portable concept of renewable energy will encourage the direct usage of renewable energy for portable gadgets. The working principle and design of portable thermoelectric power generator coupled with phase change material is presented in this paper.

  8. Control of group velocity by phase-changing collisions

    International Nuclear Information System (INIS)

    Goren, C.; Rosenbluh, M.; Wilson-Gordon, A.D.; Friedmann, H.

    2005-01-01

    We discuss the influence of phase-changing collisions on the group velocities in Doppler-broadened, cycling, degenerate two-level systems where F e =F g +1 and F g >0, interacting with pump and probe lasers, that exhibit electromagnetically induced absorption (EIA). Two model systems are considered: the N system where the pump and probe are polarized perpendicularly, and EIA is due to transfer of coherence (TOC), and the double two-level system (TLS) where both lasers have the same polarization, and EIA is due to transfer of population (TOP). For the case of Doppler-broadened EIA TOC, which occurs at low pump intensity, there is a switch from positive to negative dispersion and group velocity, as the rate of phase-changing collisions is increased. For the case of EIA TOP at low pump intensity, the dispersion and group velocity remain negative even when the collision rate is increased. Pressure-induced narrowing, accompanied by an increase in the magnitude of the negative dispersion and a decrease in the magnitude of the negative group velocity, occurs in both EIA TOC and EIA TOP, at low pump intensity. When the pump intensity is increased, a switch from negative to positive dispersion and group velocity, with increasing collision rate, also occurs in the double TLS system. However, the effect is far smaller than in the case of the N system at low pump intensity

  9. Integrating Phase-Change Materials into Automotive Thermoelectric Generators

    Science.gov (United States)

    Klein Altstedde, Mirko; Rinderknecht, Frank; Friedrich, Horst

    2014-06-01

    Because the heat emitted by conventional combustion-engine vehicles during operation has highly transient properties, automotive thermoelectric generators (TEG) are intended for a particular operating state (design point). This, however, leads to two problems. First, whenever the combustion engine runs at low load, the maximum operating temperature cannot be properly utilised; second, a combustion engine at high load requires partial diversion of exhaust gas away from the TEG to protect the thermoelectric modules. An attractive means of stabilising dynamic exhaust behaviour (thereby keeping the TEG operating status at the design point for as long as possible) is use of latent heat storage, also known as phase-change materials (PCM). By positioning PCM between module and exhaust heat conduit, and choosing a material with a phase-change temperature matching the module's optimum operating temperature, it can be used as heat storage. This paper presents results obtained during examination of the effect of integration of latent heat storage on the potential of automotive TEG to convert exhaust heat. The research resulted in the development of a concept based on the initial integration idea, followed by proof of concept by use of a specially created prototype. In addition, the potential amount of energy obtained by use of a PCM-equipped TEG was calculated. The simulations indicated a significant increase in electrical energy was obtained in the selected test cycle.

  10. Direct numerical simulation of incompressible multiphase flow with phase change

    Science.gov (United States)

    Lee, Moon Soo; Riaz, Amir; Aute, Vikrant

    2017-09-01

    Simulation of multiphase flow with phase change is challenging because of the potential for unphysical pressure oscillations, spurious velocity fields and mass flux errors across the interface. The resulting numerical errors may become critical when large density contrasts are present. To address these issues, we present a new approach for multiphase flow with phase change that features, (i) a smooth distribution of sharp velocity jumps and mass flux within a narrow region surrounding the interface, (ii) improved mass flux projection from the implicit interface onto the uniform Cartesian grid and (iii) post-advection velocity correction step to ensure accurate velocity divergence in interfacial cells. These new features are implemented in combination with a sharp treatment of the jumps in pressure and temperature gradient. A series of 1-D, 2-D, axisymmetric and 3-D problems are solved to verify the improvements afforded by the new approach. Axisymmetric film boiling results are also presented, which show good qualitative agreement with heat transfer correlations as well as experimental observations of bubble shapes.

  11. Phase change energy storage for solar dynamic power systems

    Science.gov (United States)

    Chiaramonte, F. P.; Taylor, J. D.

    1992-01-01

    This paper presents the results of a transient computer simulation that was developed to study phase change energy storage techniques for Space Station Freedom (SSF) solar dynamic (SD) power systems. Such SD systems may be used in future growth SSF configurations. Two solar dynamic options are considered in this paper: Brayton and Rankine. Model elements consist of a single node receiver and concentrator, and takes into account overall heat engine efficiency and power distribution characteristics. The simulation not only computes the energy stored in the receiver phase change material (PCM), but also the amount of the PCM required for various combinations of load demands and power system mission constraints. For a solar dynamic power system in low earth orbit, the amount of stored PCM energy is calculated by balancing the solar energy input and the energy consumed by the loads corrected by an overall system efficiency. The model assumes an average 75 kW SD power system load profile which is connected to user loads via dedicated power distribution channels. The model then calculates the stored energy in the receiver and subsequently estimates the quantity of PCM necessary to meet peaking and contingency requirements. The model can also be used to conduct trade studies on the performance of SD power systems using different storage materials.

  12. Oxygen incorporation into GST phase-change memory matrix

    Energy Technology Data Exchange (ETDEWEB)

    Golovchak, R., E-mail: holovchakr@apsu.edu [Department of Physics and Astronomy, Austin Peay State University, Clarksville, TN 37044 (United States); Choi, Y.G. [Department of Materials Science and Engineering, Korea Aerospace University, Gyeonggi 412-791 (Korea, Republic of); Kozyukhin, S. [Kurnakov Institute of General and Inorganic Chemistry of RAS, 31 Leninsky Pr., Moscow 119991 (Russian Federation); National Research Tomsk State University, 36 Lenin Pr., Tomsk 634050 (Russian Federation); Chigirinsky, Yu. [Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod 603600 (Russian Federation); Kovalskiy, A.; Xiong-Skiba, P.; Trimble, J. [Department of Physics and Astronomy, Austin Peay State University, Clarksville, TN 37044 (United States); Pafchek, R.; Jain, H. [Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States)

    2015-03-30

    Graphical abstract: - Highlights: • Surfaces of GST-225 films are depleted in Te as a result of the reaction with oxygen. • Top layers of oxidized GST-225 are formed by Sb and Ge oxide complexes. • Depth profiles of Sb and Ge oxide complexes are found to be different. • Crystallization at 300 °C in O{sub 2} atmosphere leads to Ge redistribution. - Abstract: Structural changes in amorphous and crystallized GST-225 films induced by the reaction with oxygen are studied at different depth scales. The mechanism of interaction of the very top surface layers with oxygen is studied with low-energy ion scattering (LEIS) technique, while the modifications of chemistry in the underlying surface layers are investigated with high-resolution X-ray photoelectron spectroscopy (XPS). The changes averaged through the overall film thickness are characterized by micro-Raman spectroscopy. The oxygen exposure leads to a depletion of GST-225 film surfaces in Te and formation of the antimony and germanium oxides. The antimony oxide complexes are found throughout the whole thickness of the films after their prolonged storage in air, whereas no evidence for formation of pure GeO{sub 2} phase is found in the volume of the films through Raman spectroscopy. A tendency to form Ge-rich phase within the ∼10 nm surface layer is additionally observed by LEIS profiling during crystallization of GST-225 film at 300 °C in oxygen atmosphere.

  13. Gradient augmented level set method for phase change simulations

    Science.gov (United States)

    Anumolu, Lakshman; Trujillo, Mario F.

    2018-01-01

    A numerical method for the simulation of two-phase flow with phase change based on the Gradient-Augmented-Level-set (GALS) strategy is presented. Sharp capturing of the vaporization process is enabled by: i) identification of the vapor-liquid interface, Γ (t), at the subgrid level, ii) discontinuous treatment of thermal physical properties (except for μ), and iii) enforcement of mass, momentum, and energy jump conditions, where the gradients of the dependent variables are obtained at Γ (t) and are consistent with their analytical expression, i.e. no local averaging is applied. Treatment of the jump in velocity and pressure at Γ (t) is achieved using the Ghost Fluid Method. The solution of the energy equation employs the sub-grid knowledge of Γ (t) to discretize the temperature Laplacian using second-order one-sided differences, i.e. the numerical stencil completely resides within each respective phase. To carefully evaluate the benefits or disadvantages of the GALS approach, the standard level set method is implemented and compared against the GALS predictions. The results show the expected trend that interface identification and transport are predicted noticeably better with GALS over the standard level set. This benefit carries over to the prediction of the Laplacian and temperature gradients in the neighborhood of the interface, which are directly linked to the calculation of the vaporization rate. However, when combining the calculation of interface transport and reinitialization with two-phase momentum and energy, the benefits of GALS are to some extent neutralized, and the causes for this behavior are identified and analyzed. Overall the additional computational costs associated with GALS are almost the same as those using the standard level set technique.

  14. Phase competition in the growth of SrCoOx/LaAlO3 thin films

    Directory of Open Access Journals (Sweden)

    Jie Zhang

    2018-02-01

    Full Text Available The reversible topotactic phase transformation between brownmillerite SrCoO2.5 to perovskite SrCoO3 has attracted more and more attention for potential applications as solid oxide fuels and electrolysis cells. However, the relatively easy transformation result from small thermal stable energy barriers between the two phases leads to unstable the structures. In the paper, amounts of SrCoO3-δ films have been prepared by pulsed laser deposition at optimized growth conditions with the temperature range of 590-720°C. The X-ray diffraction (XRD results demonstrated that a phase competition emerged around 650°C. The Gibbs free energies of two phases at high temperature revealed the difference of stability of these two phases under different growth temperature. The optical spectroscopies and X-ray photoelectron spectroscopies were used to verify the electronic structure and chemical state differences between the two phases with distinct crystal structures.

  15. Reversed-phase thin-layer chromatography of homologs of Antimycin-A and related derivatives

    Science.gov (United States)

    Abidi, Sharon L.

    1989-01-01

    Using a reversed-phase high-performance liquid chromatographic (HPLC) technique, a mixture of antimycins A was separated into eight hitherto unreported subcomponents, Ala, Alb, A2a, A2b, A3a, A3b, A4a, and A4b. Although a base-line resolution of the known four major antimycins Al, A2, A3, and A4 was readily achieved with mobile phases containing acetate buffers, the separation of the new antibiotic subcomponents was highly sensitive to variation in mobile phase conditions. The type and composition of organic modifiers, the nature of buffer salts, and the concentration of added electrolytes had profound effects on capacity factors, separation factors, and peak resolution values. Of the numerous chromatographic systems examined, a mobile phase consisting of methanol-water (70:30) and 0.005 M tetrabutylammonium phosphate at pH 3.0 yielded the most satisfactory results for the separation of the subcomponents. Reversed-phase gradient HPLC separation of the dansylated or methylated antibiotic compounds produced superior chromatographic characteristics and the presence of added electrolytes was not a critical factor for achieving separation. Differences in the chromatographic outcome between homologous and structural isomers were interpretated based on a differential solvophobic interaction rationale. Preparative reversed-phase HPLC under optimal conditions enabled isolation of pure samples of the methylated antimycin subcomponents for use in structural studies.

  16. Pseudomorphic-to-bulk fcc phase transition of thin Ni films on Pd(100)

    International Nuclear Information System (INIS)

    Rizzi, G.A.; Petukhov, M.; Sedona, F.; Granozzi, G.; Cossaro, A.; Bruno, F.; Cvetko, D.; Morgante, A.; Floreano, L.

    2004-01-01

    We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a limit thickness of 10 Ni pseudomorphic layers (some of them partially filled and intermixed with the substrate), where a new fcc bulklike phase is formed. After the formation of the bulklike Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulklike phase within the pseudomorphic one, i.e., the bulklike fcc domains penetrate down to the substrate when formed. This large depth of the walls separating the domains of different phases is also indicated by the increase of the intermixing at the substrate-film interface, which starts at the onset of the transition and continues at even larger thickness. The bulklike fcc phase is also slightly strained; its relaxation towards the orthomorphic lattice structure proceeds slowly with the film thickness, being not yet completed at the maximum thickness presently studied of 30 A (∼17 layers)

  17. A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

    Science.gov (United States)

    Zhou, Xilin; Dong, Weiling; Zhang, Hao; Simpson, Robert E

    2015-06-11

    Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into GeO2 and TeO2, which inhibits the technologically useful abrupt change in properties. Increasing the oxygen content in GeTe-O reduces the difference in film thickness and mass density between the amorphous and crystalline states. For oxygen concentrations between 5 and 6 at.%, the amorphous material and the crystalline material have the same density. Above 6 at.% O doping, crystallisation exhibits an anomalous density change, where the volume of the crystalline state is larger than that of the amorphous. The high thermal stability and zero-density change characteristic of Oxygen-incorporated GeTe, is recommended for efficient and low stress phase change memory devices that may operate at elevated temperatures.

  18. Reduction in L10 phase transition temperature of PLD grown FePt thin by pre-annealing pulse laser exposure

    International Nuclear Information System (INIS)

    Wang, Y.; Rawat, R.S.; Bisht, A.

    2013-01-01

    A pre-annealing atmospheric pulsed laser exposure was applied to decrease the phase transition (from chemically disordered A1 phase to chemically ordered L1 0 phase) temperature of FePt nano-particles on a Si (100) substrate. Different pre-annealing laser energy densities of 0.024 and 0.079 J/cm2 were utilized to expose the pulsed laser deposition (PLD) FePt thin film samples under atmospheric conditions. Subsequently, FePt thin film samples were annealed at different temperatures of 300 and 400 ºC to observe the influence of laser exposure on the phase transition temperature. The phase transition temperature was decreased from conventional 600 ºC to 400 ºC by one shot pre-annealing atmospheric pulsed laser exposure. (author)

  19. Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bergauer, T.; Brondolin, E. [Institut fuer Hochenergiephysik, Vienna (Austria); and others

    2017-08-15

    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φ{sub eq} = 2 x 10{sup 16} cm{sup -2}, and an ionising dose of ∼5 MGy after an integrated luminosity of 3000 fb{sup -1}. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 x 10{sup 16} cm{sup -2} are shown. (orig.)

  20. The α-particle excited scintillation response of YAG:Ce thin films grown by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Prusa, Petr; Nikl, Martin; Mares, Jiri A.; Nitsch, Karel; Beitlerova, Alena; Kucera, Miroslav

    2009-01-01

    Y 3 Al 5 O 12 :Ce (YAG:Ce) thin films were grown from PbO-,BaO-, and MoO 3 -based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5-10 μs shaping time, and energy resolution of these samples were measured under α-particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO-based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, α particle energy deposition in very thin films is modelled and discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    Science.gov (United States)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

    2014-06-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

  2. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    International Nuclear Information System (INIS)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S.K.

    2014-01-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge 2 Sb 2 Te 5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In 2 Te 3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation αhν = β(hν - E g ) 2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials. (orig.)

  3. Experimental Studies of Phase Change and Microencapsulated Phase Change Materials in a Cold Storage/Transportation System with Solar Driven Cooling Cycle

    OpenAIRE

    Lin Zheng; Wei Zhang; Fei Liang; Shuang Lin; Xiangyu Jin

    2017-01-01

    The paper presents the different properties of phase change material (PCM) and Microencapsulated phase change material (MEPCM) employed to cold storage/transportation system with a solar-driven cooling cycle. Differential Scanning Calorimeter (DSC) tests have been performed to analyze the materials enthalpy, melting temperature range, and temperature range of solidification. KD2 Pro is used to test the thermal conductivities of phase change materials slurry and the results were used to compar...

  4. Recognition of Conformational Changes in β-Lactoglobulin by Molecularly Imprinted Thin Films

    Science.gov (United States)

    Turner, Nicholas W.; Liu, Xiao; Piletsky, Sergey A.; Hlady, Vladimir; Britt, David W.

    2008-01-01

    Pathogenesis in protein conformational diseases is initiated by changes in protein secondary structure. This molecular restructuring presents an opportunity for novel shape-based detection approaches, as protein molecular weight and chemistry are otherwise unaltered. Here we apply molecular imprinting to discriminate between distinct conformations of the model protein β-lactoglobulin (BLG). Thermal- and fluoro-alcohol-induced BLG isoforms were imprinted in thin films of 3-aminophenylboronic acid on quartz crystal microbalance chips. Enhanced rebinding of the template isoform was observed in all cases when compared to the binding of nontemplate isoforms over the concentration range of 1–100 µg mL−1. Furthermore, it was observed that the greater the changes in the secondary structure of the template protein the lower the binding of native BLG challenges to the imprint, suggesting a strong steric influence in the recognition system. This feasibility study is a first demonstration of molecular imprints for recognition of distinct conformations of the same protein. PMID:17665947

  5. Changes in electrical transport and density of states of phase change materials upon resistance drift

    International Nuclear Information System (INIS)

    Krebs, Daniel; Bachmann, Tobias; Jonnalagadda, Prasad; Dellmann, Laurent; Raoux, Simone

    2014-01-01

    Phase-change memory technology has become more mature in recent years. But some fundamental problems linked to the electrical transport properties in the amorphous phase of phase-change materials still need to be solved. The increase of resistance over time, called resistance drift, for example, poses a major challenge for the implementation of multilevel storage, which will eventually be necessary to remain competitive in terms of high storage densities. To link structural properties with electrical transport, a broader knowledge of (i) changes in the density of states (DoS) upon structural relaxation and (ii) the influence of defects on electrical transport is required. In this paper, we present temperature-dependent conductivity and photo-conductivity measurements on the archetype phase change material GeTe. It is shown that trap-limited band transport at high temperatures (above 165 K) and variable range hopping at low temperatures are the predominating transport mechanism. Based on measurements of the temperature dependence of the optical band gap, modulated photo-conductivity and photo-thermal deflection spectroscopy, a DoS model for GeTe was proposed. Using this DoS, the temperature dependence of conductivity and photo-conductivity has been simulated. Our work shows how changes in the DoS (band gap and defect distributions) will affect the electrical transport before and after temperature-accelerated drift. The decrease in conductivity upon annealing can be explained entirely by an increase of the band gap by about 12%. However, low-temperature photo-conductivity measurements revealed that a change in the defect density may also play a role

  6. Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

    Energy Technology Data Exchange (ETDEWEB)

    Okazaki, Sohei [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Hirose, Yasushi, E-mail: hirose@chem.s.u-tokyo.ac.jp [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Yang, Chang [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Harayama, Isao; Sekiba, Daiichiro [Tandem Accelerator Complex, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8577 (Japan); Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2014-05-30

    InO{sub x}F{sub y} thin films were epitaxially grown on Y-stabilized ZrO{sub 2} (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T{sub S}), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T{sub S} (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T{sub S}, y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T{sub S} ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO{sub x}F{sub y} epitaxial thin films with high fluorine concentration were grown on Y:ZrO{sub 2}. • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3.

  7. Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

    International Nuclear Information System (INIS)

    Okazaki, Sohei; Hirose, Yasushi; Nakao, Shoichiro; Yang, Chang; Harayama, Isao; Sekiba, Daiichiro; Hasegawa, Tetsuya

    2014-01-01

    InO x F y thin films were epitaxially grown on Y-stabilized ZrO 2 (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T S ), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T S (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T S , y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T S ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO x F y epitaxial thin films with high fluorine concentration were grown on Y:ZrO 2 . • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3

  8. Martensitic phase transformations and magnetocaloric effect in Al co-sputtered Ni–Mn–Sb alloy thin films

    International Nuclear Information System (INIS)

    Akkera, Harish Sharma; Choudhary, Nitin; Kaur, Davinder

    2015-01-01

    Highlights: • The Al content leads to a increase in the martensitic transformation temperature. • A maximum ΔS M = 23 mJ/cm 3 K at 300 K was observed in the N 49.8 Mn 32.97 Al 4.43 Sb 12.8 . • The refrigeration capacity RC = 64.4 mJ/cm 3 at 2 T for N 49.8 Mn 32.97 Al 4.43 Sb 12.8 film. - Abstract: We systematically investigated the influence of aluminium (Al) content on the martensitic transformations and magnetocaloric effect (MCE) in Ni–Mn–Sb ferromagnetic shape memory alloy (FSMA) thin films. The temperature-dependent magnetization (M–T) and resistance (R–T) results displayed a monotonic increase in martensitic transformation temperature (T M ) with increasing Al content. From the isothermal magnetization (M–H) curves, a large magnetic entropy change (ΔS M ) of 23 mJ/cm 3 K was observed in N 49.8 Mn 32.97 Al 4.43 Sb 12.8 . A remarkable enhancement of MCE could be attributed to the significant change in the magnetization of Ni–Mn–Sb films with increasing Al content. Furthermore, a high refrigerant capacity (RC) was observed in Ni–Mn–Sb–Al thin films as compared to pure Ni–Mn–Sb. The substitution of Al for Mn in Ni–Mn–Sb thin films with field induced MCE are potential candidates for micro length scale magnetic refrigeration applications where low magnetic fields are desirable

  9. Ion beam modification of sputtered metal nitride thin films: A study of the induced microstructural changes

    International Nuclear Information System (INIS)

    Milosavljevic, M.; Perusko, D.; Popovic, M.; Novakovic, M.

    2008-01-01

    Single CrN and TiN and multilayered AlN/TiN and Al/Ti thin film structures (t = 240-280 nm) deposited on Si were irradiated with 120-200 keV Ar + ions to the fluences ranging from 1 x 10 11 5 to 4 x 10 16 ions/cm 2 . The metallic Al/Ti multilayered structure was also irradiated with high fluence (1- 2 x 10 17 /cm 2 ) nitrogen ions at 200 keV, in order to study interface mixing and formation of nitrides. Single component CrN and TiN thin films were found to grow in the form of a very fine polycrystalline columnar structures. Individual crystal grains were of the order of a few tens of nm in diameter, stretching from the substrate to the surface. After ion irradiation, the layers retain their polycrystalline structure, although the columns become disconnected, the resulting structures consisting of larger grains and nano-particles of the same phase. The implanted samples displayed higher electrical resistivity, presumably due to a higher concentration of point defects and the presence of nano-particles. In Al/Ti and AlN/TiN multilayers irradiated with Ar ions, the as-deposited structures exhibit well-defined, isolated polycrystalline Al and Ti, or AlN and TiN layers, with sharp interfaces. In the metallic system ion irradiation induced interface mixing which progressed with increasing the ion fluence. Mixing was most pronounced at the interfaces that are located around the projected ion range. The multilayered structure was essentially preserved, but the implanted samples exhibit much larger crystal grains. Also, the formation of lamellar columns stretching over a number of individual layers was observed. The AlN/TiN multilayered structures exhibited no measurable interface mixing on Ar irradiation, attributable to the nature of interatomic bonding and to mutual immiscibility of AlN and TiN. High fluence nitrogen ion irradiation of Al/Ti multilayers results in both the introduction of nitrogen into the structures as well as a high level of their intermixing. A

  10. Metal-Organic Framework Thin Films as Stationary Phases in Microfabricated Gas-Chromatography Columns.

    Energy Technology Data Exchange (ETDEWEB)

    Read, Douglas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sillerud, Colin Halliday [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2016-01-01

    The overarching goal of this project is to integrate Sandia's microfabricated gas-chromatography ( GC) columns with a stationary phase material that is capable of retaining high-volatility chemicals and permanent gases. The successful integration of such a material with GCs would dramatically expand the repertoire of detectable compounds for Sandia's various microanalysis systems. One such promising class of candidate materials is metal-organic frameworks (MOFs). In this report we detail our methods for controlled deposition of HKUST-1 MOF stationary phases within GC columns. We demonstrate: the chromatographic separation of natural gas; a method for determining MOF film thickness from chromatography alone; and the first-reported GC x GC separation of natural gas -- in general -- let alone for two disparate MOF stationary phases. In addition we determine the fundamental thermodynamic constant for mass sorption, the partition coefficient, for HKUST-1 and several light hydrocarbons and select toxic industrial chemicals.

  11. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    International Nuclear Information System (INIS)

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-01-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  12. Optical properties of Pb2 -based aggregated phases in CsBr Thin film and single crystal matrices

    Science.gov (United States)

    Nikl, M.; Nitsch, K.; Mihokova, E.; Polak, K.; Fabeni, P.; Pazzi, G. P.; Gurioli, M.; Phani, R.; Santucci, S.; Scacco, A.; Somma, F.

    Emission characteristics of CsPbBr3 and Cs4PbBr6 aggregates in CsBr bulk and thin film matrices are reported. The emission of the former aggregated phase is peaking about 520-560 nm. It shows small Stokes shift (50 meV) related to narrow free exciton emission line of sub-nanosecond decay times. Quantum size effect was evidenced for the aggregates of 6-7 nm in diameter. The Cs4PbBr6 aggregates show emission peak at 375 nm and overall emission characteristics are similar to those of KBr: Pb, which is explained by very close local arrangement of emission centres-(PbBr6)4- octahedra-in both structures.

  13. Effect of Ti diffusion on the microstructure of Ge2Sb2Te5 in phase-change memory cell.

    Science.gov (United States)

    Park, Jucheol; Bae, JunSoo

    2015-12-01

    The dependence of the microstructure of Ge2Sb2Te5 (GST) on Ti diffusion into GST by annealing in GST/Ti/TiN phase-change random access memory stack was studied by various transmission electron microscopy (TEM) techniques. The microstructure and crystal structure of GST were identified with high-resolution TEM (HRTEM) and image simulation technique, and the Ti diffusion into GST was revealed by scanning transmission electron microscope-energy-dispersive X-ray spectroscopy analysis. It was observed that Ti atoms of Ti/TiN thin layers were incorporated into GST cell through several thermal annealing steps and they could retard the phase transition from face-centered cubic (FCC) phase into hexagonal close-packed (HCP) phase partially and restrain the increase in grain size. Thus, it is concluded that Ti diffusion can affect the microstructure of GST including the type of the crystal phase and grain size of GST. It was shown that the insertion of diffusion barrier between TiN and GST could block Ti diffusion into GST and make it possible for FCC phase to completely transform into HCP phase. © The Author 2015. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  14. Dipole-Oriented Molecular Solids Can Undergo a Phase Change and Still Maintain Electrical Polarization

    Energy Technology Data Exchange (ETDEWEB)

    Glavic, Artur G [ORNL; Cassidy, Andrew M [ORNL; Jorgensen, Mads Ry Ry [University of Aarhus, Denmark; Lauter, Valeria [ORNL; Rosu-Finsen, Alexander [Heriot-Watt University, Edinburgh, UK; Lasne, Jérôme [Heriot-Watt University, Edinburgh, UK; Jorgensen, Jakob [Aarhus University, Denmark; Iversen, Bo [ORNL; McCoustra, Martin [Heriot-Watt University, Edinburgh, UK; Field, David [University of Aarhus, Denmark

    2016-10-02

    It has recently been demonstrated that nanoscale molecular films can spontaneously assemble to self-generate intrinsic electric fields that can exceed 108 V/m. These electric fields originate from polarization charges in the material that arise because the films self-assemble to orient molecular dipole moments. This has been called the spontelectric effect. Such growth of spontaneously polarized layers of molecular solids has implications for our understanding of how intermolecular interactions dictate the structure of molecular materials used in a range of applications, for example, molecular semiconductors, sensors, and catalysts. In this paper, we present the first in situ structural characterization of a representative spontelectric solid, nitrous oxide. Infrared spectroscopy, temperature-programmed desorption, and neutron reflectivity measurements demonstrate that polarized films of nitrous oxide undergo a structural phase transformation upon heating above 48 K. A mean-field model can be used to describe quantitatively the magnitude of the spontaneously generated field as a function of film-growth temperature, and this model also recreates the phase change. Finally, this reinforces the spontelectric model as a means of describing long-range dipole–dipole interactions and points to a new type of ordering in molecular thin films.

  15. Modelling the potential role of forest thinning in maintaining water supplies under a changing climate across the conterminous United States

    Science.gov (United States)

    Ge Sun; Peter V. Caldwell; Steven G. McNulty

    2015-01-01

    The goal of this study was to test the sensitivity of water yield to forest thinning and other forest management/disturbances and climate across the conterminous United States (CONUS). Leaf area index (LAI) was selected as a key parameter linking changes in forest ecosystem structure and functions. We used the Water Supply Stress Index model to examine water yield...

  16. Polarization Induced Changes in LSM Thin Film Electrode Composition Observed by In Operando Raman Spectroscopy and TOF-SIMS

    DEFF Research Database (Denmark)

    McIntyre, Melissa D.; Traulsen, Marie Lund; Norrman, Kion

    2015-01-01

    Polarization induced changes in LSM electrode composition were investigated by utilizing in operando Raman spectroscopy and post mortem TOF-SIMS depth profiling. Experiments were conducted on cells with 160 nm thick (La0.85Sr0.15)0.9MnO3±δ thin film electrodes in 10% O2 at 700 °C under various...

  17. Heat transfer characteristics of thermal energy storage of a composite phase change materials: Numerical and experimental investigations

    International Nuclear Information System (INIS)

    Aadmi, Moussa; Karkri, Mustapha; El Hammouti, Mimoun

    2014-01-01

    In the present study, phase change materials based on epoxy resin paraffin wax with the melting point 27 °C were used as a new energy storage system. Thermophysical properties and the process of melting of a PCM (phase change material) composite were investigated numerically and experimentally. DSC (differential scanning calorimetry) has been used for measurement of melting enthalpy and determination of PCM heat capacity. The thermophysical properties of the prepared composite have been characterized by using a new transient hot plate apparatus. The results have shown that the most important thermal properties of these composites at the solid and liquid states are like the “apparent” thermal conductivity, the heat storage capacity and the latent heat of fusion. These experimental results have been simulated by using numerical Comsol ® Multiphysiques 4.3 based models with success. The results of the experimental investigation compare favorably with the numerical results and thus serve to validate the numerical approach. - Highlights: • Phase change materials based on paraffin spheres used as new energy storage system. • Thermophysical properties and the melting process of composites were investigated. • All experimental results have been simulated using Comsol ® Multiphysiques. • The ability to store and release the thermal energy were investigated. • A very thin molten PCM (phase change material) exists which is apparently visible in the spheres

  18. Heat-transfer testing procedures in phase B shuttle studies with emphasis on phase change data improvement

    Science.gov (United States)

    Throckmorton, D. A.

    1972-01-01

    The procedures used in the application of the phase change technique to the phase B shuttle configuration are discussed along with factors which may affect data accuracy. These factors include variation of thermal properties of phase change model material, sensitivity of measured heat transfer coefficients to the assumed value of the adiabatic to total temperature ratio, and wall temperature effects. These sensitivities are illustrated in sample calculations for a shuttle geometry. Factors which may affect the visual clarity and interpretation of phase change data are discussed, and a method of improving photographic data quality through the use of polarized light is presented.

  19. Mechanical property changes in porous low-k dielectric thin films during processing

    Energy Technology Data Exchange (ETDEWEB)

    Stan, G., E-mail: gheorghe.stan@nist.gov; Gates, R. S. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Kavuri, P. [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Torres, J.; Michalak, D.; Ege, C.; Bielefeld, J.; King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2014-10-13

    The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.

  20. Phase Change Material Heat Sink for an ISS Flight Experiment

    Science.gov (United States)

    Quinn, Gregory; Stieber, Jesse; Sheth, Rubik; Ahlstrom, Thomas

    2015-01-01

    A flight experiment is being constructed to utilize the persistent microgravity environment of the International Space Station (ISS) to prove out operation of a microgravity compatible phase change material (PCM) heat sink. A PCM heat sink can help to reduce the overall mass and volume of future exploration spacecraft thermal control systems (TCS). The program is characterizing a new PCM heat sink that incorporates a novel phase management approach to prevent high pressures and structural deformation that often occur with PCM heat sinks undergoing cyclic operation in microgravity. The PCM unit was made using brazed aluminum construction with paraffin wax as the fusible material. It is designed to be installed into a propylene glycol and water cooling loop, with scaling consistent with the conceptual designs for the Orion Multipurpose Crew Vehicle. This paper reports on the construction of the PCM heat sink and on initial ground test results conducted at UTC Aerospace Systems prior to delivery to NASA. The prototype will be tested later on the ground and in orbit via a self-contained experiment package developed by NASA Johnson Space Center to operate in an ISS EXPRESS rack.

  1. Phase Change Energy Storage Material Suitable for Solar Heating System

    Science.gov (United States)

    Li, Xiaohui; Li, Haihua; Zhang, Lihui; Liu, Zhenfa

    2018-01-01

    Differential scanning calorimetry (DSC) was used to investigate the thermal properties of palmitic acid, myristic acid, laurel acid and the binary composite of palmitic/laurel acid and palmitic/myristic acid. The results showed that the phase transition temperatures of the three monomers were between 46.9-65.9°C, and the latent heats were above 190 J/g, which could be used as solar energy storage material. When the mass ratio of Palmitic acid and myristic was 1:1, the eutectic mixture could be formed. The latent heat of the eutectic mixture was 186.6 J/g, the melting temperature and the solidification temperature was 50.6°C and 43.8°C respectively. The latent heat of phase change and the melting temperature had not obvious variations after 400 thermal cycles, which proved that the binary composite had good thermal stability and was suitable for solar floor radiant heating system.

  2. Combined conduction and radiation with phase change in teflon slabs

    International Nuclear Information System (INIS)

    Shih, T.M.; Hsu, I.C.; Cunnington, G.R. Jr.

    1986-01-01

    A new approach to investigate, numerically, an one-dimensional Stefan problem with combined radiation and conduction has been developed. This numerical scheme is a modified version of the heat flux method and the scheme tracks the moving phase changing interface by coordinate transformation. The physical problem involves the radiative heating on one side of a Teflon slab; causing the material to melt and sublime as the melt-solid interface recedes. The other side of the Teflon slab is insulated. The results of this numerical scheme has been compared with results reported in the literature; before attempting to use this scheme to predict the experimental data. Satisfactory agreement between numerical results and the results in the literature as well as the experimental data has been obtained in both comparisons

  3. Electric vehicles batteries thermal management systems employing phase change materials

    Science.gov (United States)

    Ianniciello, Lucia; Biwolé, Pascal Henry; Achard, Patrick

    2018-02-01

    Battery thermal management is necessary for electric vehicles (EVs), especially for Li-ion batteries, due to the heat dissipation effects on those batteries. Usually, air or coolant circuits are employed as thermal management systems in Li-ion batteries. However, those systems are expensive in terms of investment and operating costs. Phase change materials (PCMs) may represent an alternative which could be cheaper and easier to operate. In fact, PCMs can be used as passive or semi-passive systems, enabling the global system to sustain near-autonomous operations. This article presents the previous developments introducing PCMs for EVs battery cooling. Different systems are reviewed and solutions are proposed to enhance PCMs efficiency in those systems.

  4. Characterization of Concrete Mixes Containing Phase Change Materials

    Science.gov (United States)

    Paksoy, H.; Kardas, G.; Konuklu, Y.; Cellat, K.; Tezcan, F.

    2017-10-01

    Phase change materials (PCM) can be used in passive building applications to achieve near zero energy building goals. For this purpose PCM can be added in building structures and materials in different forms. Direct incorporation, form stabilization and microencapsulation are different forms used for PCM integration in building materials. In addition to thermal properties of PCM itself, there are several other criteria that need to be fulfilled for the PCM enhanced building materials. Mechanical properties, corrosive effects, morphology and thermal buffering have to be determined for reliable and long-term applications in buildings. This paper aims to give an overview of characterization methods used to determine these properties in PCM added fresh concrete mixes. Thermal, compressive strength, corrosion, and microscopic test results for concrete mixes with PCM are discussed.

  5. Modeling of subcooling and solidification of phase change materials

    Science.gov (United States)

    Günther, Eva; Mehling, Harald; Hiebler, Stefan

    2007-12-01

    Phase change materials (PCM) are able to store thermal energy in small temperature intervals very efficiently due to their high latent heat. Particularly high storage capacity is found in salt hydrates. Salt hydrates however often show subcooling, thus inhibiting the release of the stored heat. In the state of the art simulations of PCM, the effect of subcooling is almost always neglected. This is a practicable approach for small subcooling, but it is problematic for subcooling in the order of the driving temperature gradient on unloading the storage. In this paper, we first present a new algorithm to simulate subcooling in a physically proper way. Then, we present a parametric study to demonstrate the main features of the algorithm and a comparison of computed and experimentally obtained data. The new algorithm should be particularly useful in simulating applications with low cooling rates, for example building applications.

  6. Color printing enabled by phase change materials on paper substrate

    Directory of Open Access Journals (Sweden)

    Hong-Kai Ji

    2017-12-01

    Full Text Available We have coated phase change materials (PCMs on rough and flexible substrates to achieve multicolor changeable devices. The principle of the device is based on an earlier discovery that lights have strong interference effect in PCM films, leading to various colors by reflection. In this work, paper substrates are laminated by parylene layers to protect the device from water before coated with functional PCM films. The PCM-based color printing (PCP on paper is not affected by rough surfaces and shows a similar color appearance as that on smooth surfaces. In particular, the color-printed device can be patterned by UV lithography to display a clear and tunable optical image, and it exhibits a low sensitivity to the angle of view. Such PCP has potential applications for low-cost, disposable, and flexible displays.

  7. Plastic phase change material and articles made therefrom

    Science.gov (United States)

    Abhari, Ramin

    2016-04-19

    The present invention generally relates to a method for manufacturing phase change material (PCM) pellets. The method includes providing a melt composition, including paraffin and a polymer. The paraffin has a melt point of between about 10.degree. C. and about 50.degree. C., and more preferably between about 18.degree. C. and about 28.degree. C. In one embodiment, the melt composition includes various additives, such as a flame retardant. The method further includes forming the melt composition into PCM pellets. The method further may include the step of cooling the melt to increase the melt viscosity before pelletizing. Further, PCM compounds are provided having an organic PCM and a polymer. Methods are provided to convert the PCM compounds into various form-stable PCMs. A method of coating the PCMs is included to provide PCMs with substantially no paraffin seepage and with ignition resistance properties.

  8. Review on phase change materials for building applications

    Directory of Open Access Journals (Sweden)

    Lavinia SOCACIU

    2014-11-01

    Full Text Available In nowadays, the Phase Change Material (PCM is a viable alternative for reducing the energy consumption and for increase the thermal comfort in buildings. The use of PCM in building applications provides the potential to increase the indoor thermal comfort for occupants due to the reduced indoor temperature fluctuations and lower global energy consumption. The possibility to incorporate the PCM into the material of construction for cooling and heating the buildings gained the interest of researchers from all the world because the PCM have a high heat of fusion, meaning it is capable to storing and release large amounts of energy in the form of heat during its melting and solidifying process at a specific temperature.

  9. Color printing enabled by phase change materials on paper substrate

    Science.gov (United States)

    Ji, Hong-Kai; Tong, Hao; Qian, Hang; Liu, Nian; Xu, Ming; Miao, Xiang-Shui

    2017-12-01

    We have coated phase change materials (PCMs) on rough and flexible substrates to achieve multicolor changeable devices. The principle of the device is based on an earlier discovery that lights have strong interference effect in PCM films, leading to various colors by reflection. In this work, paper substrates are laminated by parylene layers to protect the device from water before coated with functional PCM films. The PCM-based color printing (PCP) on paper is not affected by rough surfaces and shows a similar color appearance as that on smooth surfaces. In particular, the color-printed device can be patterned by UV lithography to display a clear and tunable optical image, and it exhibits a low sensitivity to the angle of view. Such PCP has potential applications for low-cost, disposable, and flexible displays.

  10. Investigation of switching region in superlattice phase change memories

    Science.gov (United States)

    Ohyanagi, T.; Takaura, N.

    2016-10-01

    We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μ A .

  11. Processes that generate and deplete liquid water and snow in thin midlevel mixed-phase clouds

    Science.gov (United States)

    Smith, Adam J.; Larson, Vincent E.; Niu, Jianguo; Kankiewicz, J. Adam; Carey, Lawrence D.

    2009-06-01

    This paper uses a numerical model to investigate microphysical, radiative, and dynamical processes in mixed-phase altostratocumulus clouds. Three cloud cases are chosen for study, each of which was observed by aircraft during the fifth or ninth Complex Layered Cloud Experiment (CLEX). These three clouds are numerically modeled using large-eddy simulation (LES). The observed and modeled clouds consist of a mixed-phase layer with a quasi-adiabatic profile of liquid, and a virga layer below that consists of snow. A budget of cloud (liquid) water mixing ratio is constructed from the simulations. It shows that large-scale ascent/descent, radiative cooling/heating, turbulent transport, and microphysical processes are all significant. Liquid is depleted indirectly via depositional growth of snow (the Bergeron-Findeisen process). This process is more influential than depletion of liquid via accretional growth of snow. Also constructed is a budget of snow mixing ratio, which turns out to be somewhat simpler. It shows that snow grows by deposition in and below the liquid (mixed-phase) layer, and sublimates in the remainder of the virga region below. The deposition and sublimation are balanced primarily by sedimentation, which transports the snow from the growth region to the sublimation region below. In our three clouds, the vertical extent of the virga layer is influenced more by the profile of saturation ratio below the liquid (mixed-phase) layer than by the mixing ratio of snow at the top of the virga layer.

  12. Synthesis, structuring and characterization of rare earth oxide thin films: Modeling of the effects of stress and defects on the phase stability

    International Nuclear Information System (INIS)

    Gaboriaud, R.J.; Paumier, F.; Lacroix, B.

    2014-01-01

    This work studies the effects of the deposition parameters on the microstructure and the related residual stress in a rare earth oxide thin film. This study is focused on the yttrium sesquioxide (Y 2 O 3 ) thin films deposited on Si (100) substrates using the ion beam sputtering technique. This technique allows the control of the microstructure and the related residual stress in the thin films by monitoring the energy of the argon beam used in the deposition process. Measurements of the stresses within the oxide layer were performed by the X-ray diffraction-sin 2 Ψ method. The results show that the classic model of a pure biaxial in-plane model of stress, generally proposed in thin films, is not satisfying. A model that includes a hydrostatic stress due to the crystalline defects generated during the deposition process and a biaxial stress called a fixation stress, gives a good agreement with the experimental results. This modeling of the residual stress, based on nanometer-scale inclusions (point, extended defects) inducing a hydrostatic stress field, leads to a quantitative analysis of the nature and the concentration of the defects. This work shows results that establish a relationship between residual stress, defects and non-equilibrium phase stabilization during growth. - Highlights: • Microstructure of Y 2 O 3 thin films • Measurements of residual stresses in the thin films • Modeling of a triaxial residual stress state • Stress-induced stabilization of non-equilibrium phase

  13. A thin two-phase foils deformed by an interfacial dislocation in anisotropic elasticity

    Directory of Open Access Journals (Sweden)

    Madani, Salah

    2005-04-01

    Full Text Available The purpose of this work is the numerical resolution, in the case of anisotropic elasticity, of the problem of a dislocation parallel and near to the two free surfaces of a thin bicrystal. This case is obtained while making the period of a network of misfit dislocations much greater than the thickness of the two foils. As a result, in the vicinity of the dislocation, the limiting bondary conditions will be close to that of Volterra translation dislocation. The elastic fields of displacement and stress are calculated for various orientations of the burgers vector. Before this calculation, we tested the precision of the results of the program by comparing the interfacial relative displacement obtained from this one to the results of the analytical expression describing this same displacement. The thin bicristal Al/Al2Cu, that made the object of several investigations, is treated like example. The results obtained are compared to those obtained in isotropic elasticity.

    Este trabajo aborda la resolución numérica en anisotropía elástica, del problema de una dislocación paralela cercana a las superficies libres de un bi-cristal delgado. Este problema se genera cuando el periodo de la red de dislocaciones desplazadas es mucho mayor que el espesor de la bi-lámina. Como resultados, en la vecindad de la dislocación, las condiciones de contorno estarán cercanas a la dislocación de traslación de Volterra. Los campos elásticos de desplazamiento y las tensiones se calcularon para distintas orientaciones del vector de burgers. Como paso previo a los cálculos, se comprobó la precisión de los resultados del programa comparando le desplazamiento relativo interracial obtenido con los resultados de la expresión analítica que describen dicho desplazamiento. Se emplearon como ejemplo bi-cristales de Al/Al2Cu, debido a su empleo en varias investigaciones. Los resultados fueron comparados con los obtenidos en elasticidad isótropa.

  14. Phase and electrical properties of PZT thin films embedded with CuO nano-particles by a hybrid sol-gel route

    Science.gov (United States)

    Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

    2013-07-01

    Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.

  15. MAX phase formation by intercalation upon annealing of TiCx/Al (0.4 ≤ x ≤ 1) bilayer thin films

    International Nuclear Information System (INIS)

    Abdulkadhim, Ahmed; Takahashi, Tetsuya; Music, Denis; Munnik, Frans; Schneider, Jochen M.

    2011-01-01

    TiC x /Al bilayer thin films were synthesized using combinatorial magnetron sputtering to study the influence of C content on the reaction products at different annealing temperatures. Based on energy-dispersive X-ray analysis calibrated by elastic recoil detection analysis data, x in TiC x was varied from 0.4 to 1.0. Film constitution was studied by X-ray diffraction before and after annealing at temperatures from 500 to 1000 deg. C. The formation of TiC x and Al in the as-deposited samples over the whole C/Ti range was identified. Upon annealing, TiC x reacts with Al to form Ti-Al-based intermetallics. At temperatures as low as 700 deg. C, the formation of MAX phases (space group P6 3 /mmc) is observed at x ≤ 0.7. Based on the comparison between the C content induced changes in the lattice spacing of TiC x and Ti 2 AlC as well as Ti 3 AlC 2 , we infer the direct formation of MAX phases by Al intercalation into TiC x for x ≤ 0.7.

  16. MAX phase formation by intercalation upon annealing of TiC{sub x}/Al (0.4 {<=} x {<=} 1) bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abdulkadhim, Ahmed; Takahashi, Tetsuya [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 10, 52074 Aachen (Germany); Music, Denis, E-mail: music@mch.rwth-aachen.de [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 10, 52074 Aachen (Germany); Munnik, Frans [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden (Germany); Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 10, 52074 Aachen (Germany)

    2011-09-15

    TiC{sub x}/Al bilayer thin films were synthesized using combinatorial magnetron sputtering to study the influence of C content on the reaction products at different annealing temperatures. Based on energy-dispersive X-ray analysis calibrated by elastic recoil detection analysis data, x in TiC{sub x} was varied from 0.4 to 1.0. Film constitution was studied by X-ray diffraction before and after annealing at temperatures from 500 to 1000 deg. C. The formation of TiC{sub x} and Al in the as-deposited samples over the whole C/Ti range was identified. Upon annealing, TiC{sub x} reacts with Al to form Ti-Al-based intermetallics. At temperatures as low as 700 deg. C, the formation of MAX phases (space group P6{sub 3}/mmc) is observed at x {<=} 0.7. Based on the comparison between the C content induced changes in the lattice spacing of TiC{sub x} and Ti{sub 2}AlC as well as Ti{sub 3}AlC{sub 2}, we infer the direct formation of MAX phases by Al intercalation into TiC{sub x} for x {<=} 0.7.

  17. Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg [Institut fuer Experimentalphysik, Universitaet Hamburg (Germany); Eckstein, Doris; Eichhorn, Thomas [Deutsches Elektronen Synchrotron (DESY) (Germany)

    2016-07-01

    The high-luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the tracker of the CMS experiment. The innermost layer of the new pixel detector will be exposed to severe radiation corresponding to a 1 MeV neutron equivalent fluence up to Φ{sub eq} = 2 . 10{sup 16} cm{sup -2} and an ionizing dose of ∼ 10 MGy after an integrated luminosity of 3000 fb{sup -1}. Silicon crystals grown with different methods and sensor designs are under investigation in order to optimize the sensors for such high fluences. Thin planar silicon sensors are good candidates to achieve this goal, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. Epitaxial pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 . 10{sup 16} cm{sup -2} have been characterized in laboratory measurements and beam tests at the DESY II facility. The active thickness of the strip sensors and pad diodes is 100 μm. In addition, strip sensors produced using other growth techniques with a thickness of 200 μm have been studied. In this talk, the results obtained for p-bulk sensors are shown.

  18. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Science.gov (United States)

    Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2014-08-01

    The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  19. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Directory of Open Access Journals (Sweden)

    Christian Wehrenfennig

    2014-08-01

    Full Text Available The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  20. Stratification-induced order--disorder phase transitions in molecularly thin confined films

    International Nuclear Information System (INIS)

    Schoen, M.; Diestler, D.J.; Cushman, J.H.

    1994-01-01

    By means of grand canonical ensemble Monte Carlo simulations of a monatomic film confined between unstructured (i.e., molecularly smooth) rigidly fixed solid surfaces (i.e., walls), we investigate the mechanism of molecular stratification, i.e., the tendency of atoms to arrange themselves in layers parallel with the walls. Stratification is accompanied by a heretofore unnoticed order--disorder phase transition manifested as a maximum in density fluctuations at the transition point. The transition involves phases with different transverse packing characteristics, although the number of layers accommodated between the walls remains unchanged during the transition, which occurs periodically as the film thickens. However, with increasing thickness, an increasingly smaller proportion of the film is structurally affected by the transition. Thus, the associated maximum in density fluctuations diminishes rapidly with film thickness