Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

Science.gov (United States)

Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

2017-10-01

We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

(0 0 1) textured CoPt-Ag nanocomposite films for high-density perpendicular magnetic recording

International Nuclear Information System (INIS)

Xue, S.X.; Wang, H.; Wang, H.B.; Yang, F.J.; Wang, J.A.; Cao, X.; Gao, Y.; Huang, Z.B.; Li, Z.Y.; Li, Q.; Wong, S.P.

2006-01-01

CoPt/Ag nanocomposite films were prepared by magnetron sputtering. The dependence of texture and magnetic properties on film thickness, Ag atomic fraction and annealing conditions is investigated. Films with a thickness about 20 nm are easy to form with (0 0 1) orientation. The existence of the Ag in the film plays a dominant role in inducing the (0 0 1) texture of the film and suppressing the growth of the CoPt grains during annealing. The Co 35 Pt 38 Ag 27 film after annealing at 600 deg. C exhibits a large perpendicular coercivity of 5.6 kOe and a squareness of 0.90 with a small average grains size of 12.5 nm

A structural study of effects of NiP seed layer on the magnetic properties of CoCrPt/Ti/NiP perpendicular magnetic films

CERN Document Server

Sun, C J; Wang, J P; Soo, E W; Noh, D Y; Je, J H; Hwu, Y K

2003-01-01

The CoCrPt/Ti/NiP films for perpendicular magnetic recording were studied using X-ray scattering and anomalous X-ray scattering. When the NiP seed layer was used, the long range order of the texture peak of the magnetic film decreased and less Co was associated with this Bragg order. The structural results were consistent with the observed increased coercivity and decreased magnetization due to the increased magnetic grain isolation caused by the presence of NiP seed layer.

Spin wave propagation in perpendicularly magnetized nm-thick yttrium iron garnet films

Science.gov (United States)

Chen, Jilei; Heimbach, Florian; Liu, Tao; Yu, Haiming; Liu, Chuanpu; Chang, Houchen; Stückler, Tobias; Hu, Junfeng; Zeng, Lang; Zhang, Youguang; Liao, Zhimin; Yu, Dapeng; Zhao, Weisheng; Wu, Mingzhong

2018-03-01

Magnonics offers a new way for information transport that uses spin waves (SWs) and is free of charge currents. Unlike Damon-Eshbach SWs, the magneto-static forward volume SWs offer the reciprocity configuration suitable for SW logic devices with low power consumption. Here, we study forward volume SW propagation in yttrium iron garnet (YIG) thin films with an ultra-low damping constant α = 8 ×10-5 . We design different integrated microwave antenna with different k-vector excitation distributions on YIG thin films. Using a vector network analyzer, we measured SW transmission with the films magnetized in perpendicular orientation. Based on the experimental results, we extract the group velocity as well as the dispersion relation of SWs and directly compare the power efficiency of SW propagation in YIG using coplanar waveguide and micro stripline for SW excitation and detection.

Double-layered perpendicular magnetic recording media of granular-type FePt-MgO films

International Nuclear Information System (INIS)

Zhang Zhengang; Singh, Amarendra K.; Yin Jinhua; Perumal, A.; Suzuki, Takao

2005-01-01

The recording performance of double-layered granular-type FePt-MgO perpendicular magnetic recording media fabricated onto glass discs by sputtering is investigated. The (0 0 1)-textured FePt granular films are obtained by annealing FePt/MgO multilayers. Three different multilayer structures are compared in their magnetic properties and recording SNR performances. To evaluate thermal stability property of these granular-type FePt disks, the time-dependent magnetic force microscope (MFM) signal from the written bits on one of these disks is recorded in the temperature range 25-200 degree sign C. The signal decay at high observation temperature is interpreted based on the temperature dependence of magnetic anisotropy (K u )

Antidot patterned single and bilayer thin films based on ferrimagnetic Tb-Co alloy with perpendicular magnetic anisotropy

Science.gov (United States)

Kulesh, N. A.; Vázquez, M.; Lepalovskij, V. N.; Vas'kovskiy, V. O.

2018-02-01

Hysteresis properties and magnetization reversal in TbCo(30 nm) and FeNi(10 nm)/TbCo(30 nm) films with nanoscale antidot lattices are investigated to test the effect of nanoholes on the perpendicular anisotropy in the TbCo layer and the induced exchange bias in the FeNi layer. The antidots are introduced by depositing the films on top of hexagonally ordered porous anodic alumina substrates with pore diameter and interpore distance fixed to 75 nm and 105 nm, respectively. The analysis of combined vibrating sample magnetometry, Kerr microscopy and magnetic force microscopy imaging measurements has allowed us to link macroscopic and local magnetization reversal processes. For magnetically hard TbCo films, we demonstrate the tunability of magnetic anisotropy and coercive field (i.e., it increases from 0.2 T for the continuous film to 0.5 T for the antidot film). For the antidot FeNi/TbCo film, magnetization of FeNi is confirmed to be in plane. Although an exchange bias has been locally detected in the FeNi layer, the integrated hysteresis loop has increased coercivity and zero shift along the field axis due to the significantly decreased magnetic anisotropy of TbCo layer.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Science.gov (United States)

Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

2017-08-01

Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Origin of perpendicular magnetic anisotropy in Co/Ni multilayers

Science.gov (United States)

Arora, M.; Hübner, R.; Suess, D.; Heinrich, B.; Girt, E.

2017-07-01

We studied the variation in perpendicular magnetic anisotropy of (111) textured Au /N ×[Co /Ni ]/Au films as a function of the number of bilayer repeats N . The ferromagnetic resonance and superconducting quantum interference device magnetometer measurements show that the perpendicular magnetic anisotropy of Co/Ni multilayers first increases with N for N ≤10 and then moderately decreases for N >10 . The model we propose reveals that the decrease of the anisotropy for N reduction in the magnetoelastic and magnetocrystalline anisotropies. A moderate decrease in the perpendicular magnetic anisotropy for N >10 is due to the reduction in the magnetocrystalline and the surface anisotropies. To calculate the contribution of magnetoelastic anisotropy in the Co/Ni multilayers, in-plane and out-of-plane x-ray diffraction measurements are performed to determine the spacing between Co/Ni (111) and (220) planes. The magnetocrystalline bulk anisotropy is estimated from the difference in the perpendicular and parallel g factors of Co/Ni multilayers that are measured using the in-plane and out-of-plane ferromagnetic resonance measurements. Transmission electron microscopy has been used to estimate the multilayer film roughness. These values are used to calculate the roughness-induced surface and magnetocrystalline anisotropy coefficients as a function of N .

Perpendicular magnetic anisotropy in CoXPd100-X alloys for magnetic tunnel junctions

Science.gov (United States)

Clark, B. D.; Natarajarathinam, A.; Tadisina, Z. R.; Chen, P. J.; Shull, R. D.; Gupta, S.

2017-08-01

CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L10 alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular CoxPd alloy-pinned Co20Fe60B20/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the CoxPd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied CoxPd MTJ stacks. The CoxPd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO2/MgO (13)/CoXPd100-x (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

Magnetotransport properties of Cr1−δTe thin films with strong perpendicular magnetic anisotropy

Directory of Open Access Journals (Sweden)

L. Zhou

2017-12-01

Full Text Available P-type ferromagnetic Cr1-δTe thin films with the Curie temperature of 170K were epitaxially grown on GaAs substrate. Low-temperature magnetotransport study reveals that the film has a strong perpendicular magnetic anisotropy (PMA and an anisotropic magnetoresistance (AMR ratio up to 8.1%. Furthermore, reduced anomalous Hall effect is observed at low temperatures in Cr1-δTe, suggesting the possible crossover of the contribution to AHE from the intrinsic mechanism to extrinsic skew scattering. Distinctive from conventional transition metal ferromagnets, the AMR ratio is also greatly suppressed at low temperatures. Our work demonstrates that epitaxial Cr1-δTe films are interesting platforms for studying the physics underlying the strong PMA and large AMR.

Spin-orbit torque induced switching in a magnetic insulator thin film with perpendicular magnetic anisotropy

Science.gov (United States)

Li, J. X.; Yu, G. Q.; Tang, C.; Wang, K. L.; Shi, J.

Spin-orbit torque (SOT) has been demonstrated to be efficient to manipulate the magnetization in heavy-metal/ferromagnetic metal (HM/FMM) heterostructures. In HM/magnetic insulator (MI) heterostructures, charge currents do not flow in MI, but pure spin currents generated by the spin Hall effect in HM can enter the MI layer to cause magnetization dynamics. Here we report SOT-induced magnetization switching in Tm3Fe5O12/Pt heterostructures, where Tm3Fe5O12 (TmIG) is a MI grown by pulsed laser deposition with perpendicular magnetic anisotropy. The anomalous Hall signal in Pt is used as a probe to detect the magnetization switching. Effective magnetic fields due to the damping-like and field-like torques are extracted using a harmonic Hall detection method. The experiments are carried out in heterostructures with different TmIG film thicknesses. Both the switching and harmonic measurements indicate a more efficient SOT generation in HM/MI than in HM/FMM heterostructures. Our comprehensive experimental study and detailed analysis will be presented. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences under Award No. SC0012670.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Energy Technology Data Exchange (ETDEWEB)

Lakshmanan, Saravanan; Rao, Subha Krishna [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Muthuvel, Manivel Raja [Defence Metallurgical Research Laboratory (DMRL), Hyderabad 500058 (India); Chandrasekaran, Gopalakrishnan [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Therese, Helen Annal, E-mail: helen.a@ktr.srmuniv.ac.in [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India)

2017-08-01

Highlights: • Ta/CoFeB(50 nm)/Ta thin films were deposited at various substrate temperatures (T{sub s}). • CoFeB films deposited at T{sub s} such as RT, 450 °C, 475 °C and 500 °C exhibited perpendicular coercivity. • CoFeB deposited at 475 °C displayed a higher coercivity of 315 Oe and a low M{sub s} of 169 emu/cc. • The enhanced crystallization of CoFeB at the Ta/CoFeB interface results in higher H{sub c} (⟂). - Abstract: Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (T{sub s}) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (M{sub s}) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Tailoring of Perpendicular Magnetic Anisotropy in Dy13Fe87 Thin Films with Hexagonal Antidot Lattice Nanostructure

Directory of Open Access Journals (Sweden)

Mohamed Salaheldeen

2018-04-01

Full Text Available In this article, the magnetic properties of hexagonally ordered antidot arrays made of Dy13Fe87 alloy are studied and compared with corresponding ones of continuous thin films with the same compositions and thicknesses, varying between 20 nm and 50 nm. Both samples, the continuous thin films and antidot arrays, were prepared by high vacuum e-beam evaporation of the alloy on the top-surface of glass and hexagonally self-ordered nanoporous alumina templates, which serve as substrates, respectively. By using a highly sensitive magneto-optical Kerr effect (MOKE and vibrating sample magnetometer (VSM measurements an interesting phenomenon has been observed, consisting in the easy magnetization axis transfer from a purely in-plane (INP magnetic anisotropy to out-of-plane (OOP magnetization. For the 30 nm film thickness we have measured the volume hysteresis loops by VSM with the easy magnetization axis lying along the OOP direction. Using magnetic force microscopy measurements (MFM, there is strong evidence to suggest that the formation of magnetic domains with OOP magnetization occurs in this sample. This phenomenon can be of high interest for the development of novel magnetic and magneto-optic perpendicular recording patterned media based on template-assisted deposition techniques.

Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions

Directory of Open Access Journals (Sweden)

Atsufumi Hirohata

2018-01-01

Full Text Available For the sustainable development of spintronic devices, a half-metallic ferromagnetic film needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi level at room temperature. One of the most promising candidates for such a film is a Heusler-alloy film, which has already been proven to achieve the half-metallicity in the bulk region of the film. The Heusler alloys have predominantly cubic crystalline structures with small magnetocrystalline anisotropy. In order to use these alloys in perpendicularly magnetised devices, which are advantageous over in-plane devices due to their scalability, lattice distortion is required by introducing atomic substitution and interfacial lattice mismatch. In this review, recent development in perpendicularly-magnetised Heusler-alloy films is overviewed and their magnetoresistive junctions are discussed. Especially, focus is given to binary Heusler alloys by replacing the second element in the ternary Heusler alloys with the third one, e.g., MnGa and MnGe, and to interfacially-induced anisotropy by attaching oxides and metals with different lattice constants to the Heusler alloys. These alloys can improve the performance of spintronic devices with higher recording capacity.

Interfacial tuning of perpendicular magnetic anisotropy and spin magnetic moment in CoFe/Pd multilayers

Energy Technology Data Exchange (ETDEWEB)

Ngo, D.-T., E-mail: ndthe82@gmail.com [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Meng, Z.L. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Tahmasebi, T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, A-STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore 117608 (Singapore); Yu, X. [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Thoeng, E. [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Yeo, L.H. [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Rusydi, A., E-mail: phyandri@nus.edu.sg [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Han, G.C [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Teo, K.-L., E-mail: eleteokl@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2014-01-15

We report on a strong perpendicular magnetic anisotropy in [CoFe 0.4 nm/Pd t]{sub 6} (t=1.0–2.0 nm) multilayers fabricated by DC sputtering in an ultrahigh vacuum chamber. Saturation magnetization, M{sub s}, and uniaxial anisotropy, K{sub u}, of the multilayers decrease with increasing the spacing thickness; with a M{sub s} of 155 emu/cc and a K{sub u} of 1.14×10{sup 5} J/m{sup 3} at a spacing thickness of t=2 nm. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements reveal that spin and orbital magnetic moments of Co and Fe in CoFe film decrease as a function of Pd thickness, indicating the major contribution of surface/interfacial magnetism to the magnetic properties of the film. - Highlights: • Strong perpendicular magnetic anisotropy essentially contributed by interfacial anisotropy. • Controllably magnetic properties with low M{sub s}, high K{sub u}, high P. • Interfacial magnetic moments modified by CoFe/Pd interfaces with strong spin–orbit coupling. • Narrow Bloch walls with Néel caps. • Superior magnetic characteristics for spin-torque applications.

CeCo5 thin films with perpendicular anisotropy grown by molecular beam epitaxy

Science.gov (United States)

Sharma, S.; Hildebrandt, E.; Major, M.; Komissinskiy, P.; Radulov, I.; Alff, L.

2018-04-01

Buffer-free, highly textured (0 0 1) oriented CeCo5 thin films showing perpendicular magnetic anisotropy were synthesized on (0 0 1) Al2O3 substrates by molecular beam epitaxy. Ce exists in a mixture of Ce3+ and Ce4+ valence states as shown by X-ray photoelectron spectroscopy. The first anisotropy constant, K1, as measured by torque magnetometry was 0.82 MJ/m3 (8.2 ×106erg /cm3) . A maximum coercivity of 5.16 kOe with a negative temperature coefficient of -0.304%K-1 and a magnetization of 527.30 emu/cm3 was measured perpendicular to the film plane at 5 K. In addition, a large anisotropy of the magnetic moment of 15.5% was observed. These magnetic parameters make CeCo5 a potential candidate material for spintronic and magnetic recording applications.

Perpendicular magnetic anisotropy of non-epitaxial hexagonal Co{sub 50}Pt{sub 50} thin films prepared at room temperature

Energy Technology Data Exchange (ETDEWEB)

Yuan, F.T., E-mail: ftyuan@gmail.com [iSentek Ltd., Advanced Sensor Laboratory, New Taipei City 22101, Taiwan (China); Chang, H.W., E-mail: wei0208@gmail.com [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Lee, P.Y.; Chang, C.Y. [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Chi, C.C. [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ouyang, H., E-mail: houyang@mx.nthu.edu.tw [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2015-04-15

Highlights: • In this paper, we propose a non-epitaxially grown PMA thin film of disorder hexagonal Co{sub 50}Pt{sub 50} which can satisfy all the requirements at once. • Although the preparation temperature is at room temperature and no post annealing is required, the film also shows good thermal stability up to 400 °C. • Moreover, the easy-controlling single layer deposition process of the film largely enhances the feasibility of practical production. • Significant PMA is achieved in a wide range of film thickness from 2 nm to 20 nm, which expands the usage form a GMR or TMR magnetic junctions to perpendicular spin polarizer for spin current related engineering. • The presented results may open new opportunities for advanced spintronic devices. - Abstract: Non-epitaxially induced perpendicular magnetic anisotropy (PMA) of Co{sub 50}Pt{sub 50} thin films at room temperature (RT) is reported. The CoPt film having a disordered hcp structure shows a magnetocrystalline anisotropy (K{sub u}{sup RT}) of 1–2 × 10{sup 6} erg/cm{sup 3} in a wide range of layer thickness from 2 to 20 nm. K{sub u}{sup RT} of about 1 × 10{sup 6} erg/cm{sup 3} can be preserved after a 400 °C-thermal cycle in the 5-nm-thick sample. Moderate PMA, large thickness range, simple preparation process, low formation temperature but good thermal stability make presented hcp CoPt become a remarkable option for advanced spintronic devices.

Magnetic anisotropies and magnetic switching in Co films

Science.gov (United States)

Bland, J. A. C.; Baird, M. J.; Leung, H. T.; Ives, A. J. R.; Mackay, K. D.; Hughes, H. P.

1992-07-01

We have used the magneto-optical Kerr effect to investigate the role of the substrate and growth conditions in determining the magnetic switching behaviour of Co films in the thickness range 100-200 Å supported by GaAs(001) and Si(111) substrates. We discuss the anisotropic magnetic hysteresis behaviour observed for Co/GaAs and Co/Si films in terms of coherent rotation of the magnetisation vector during magnetic switching. Equivalent films supported by glass substrates are found to be almost isotropic in-plane. The in-plane coercive and saturation fields are observed to lie in the range 20-80 Oe but perpendicular saturation fields of 25 and 19 kOe are found for the Co/Si and Co/GaAs systems respectively which substantially exceed the demagnetising field in each case. The measured perpendicular anisotropy fields differ strongly from the values for hcp and bcc Co and are attributed to the details of the interface and film structure. We also report strongly frequency dependent magnetic switching behaviour in these Co films.

Influence of domain structure induced coupling on magnetization reversal of Co/Pt/Co film with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Matczak, Michał [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Schäfer, Rudolf [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Institute for Metallic Materials, PO 270116, D-01171 Dresden (Germany); Dresden University of Technology, Institute for Materials Science, D-01062 Dresden (Germany); Urbaniak, Maciej; Kuświk, Piotr; Szymański, Bogdan; Schmidt, Marek; Aleksiejew, Jacek [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Stobiecki, Feliks, E-mail: Feliks.Stobiecki@ifmpan.poznan.pl [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland)

2017-01-15

A magnetic multilayer of substrate/Pt-15 nm/Co-0.8 nm/Pt-wedge 0–7 nm/Co-0.6 nm/Pt-2 nm structure is characterized by a perpendicular anisotropy of the Co layers and by graded interlayer coupling between them. Using magnetooptical Kerr microscopy we observed a distinct influence of magnetic domains in one Co layer on the nucleation field and positions of nucleation sites of reversed domains in the second Co layer. For sufficiently strong interlayer coupling a replication of magnetic domains from the magnetically harder layer to the magnetically softer layer is observed. - Highlights: • Co/Pt-wedge/Co layered film is characterized by a gradient of interlayer coupling. • Magnetic field controls propagation of straight domain wall. • Replication of magnetic domains in multilayers with strong ferromagnetic coupling. • Coupling induced by domains influences magnetization reversal of spin valves.

Magnetic and structural properties of L1{sub 1} type CoPt-C ordered alloy perpendicular films as a function of C content

Energy Technology Data Exchange (ETDEWEB)

Shimatsu, T; Kataoka, H; Aoi, H [Research Institute of Electrical Communication, Tohoku University, Sendai, 980-8577 (Japan); Sato, H; Okamoto, S; Kitakami, O, E-mail: shimatsu@riec.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577 (Japan)

2010-01-01

Magnetic and structural properties of L1{sub 1} type (Co{sub 0.5}Pt{sub 0.5}){sub 100-X}-C{sub X} ordered alloy perpendicular films, fabricated on 2.5 inch size glass disks by sputter deposition, were examined as a function of C content, X. L1{sub 1} type Co{sub 0.5}Pt{sub 0.5}-C polycrystalline films (10 nm thickness), with <111> axis (the easy axis) perpendicular to the film plane, were successfully fabricated even for a 30 vol% C content. Structural analysis indicated the segregation of C to the grain boundaries. Uniaxial magnetic anisotropy, K{sub u}, of Co{sub 0.5}Pt{sub 0.5} films without C addition was relatively low, about 1.5x10{sup 7} erg/cm{sup 3} under the present deposition conditions. However, the addition of 5 vol.% C to Co-Pt films enhanced the ordering, resulting in an increase in K{sub u} to around 2.5 x10{sup 7} erg/cm{sup 3}. A further increase in C content reduced K{sub u}; however, K{sub u} maintained a relatively large value of about 1.8x10{sup 7} erg/cm{sup 3} even for a 20vol% C content, without degrading the easy axis orientation perpendicular to the film plane. Experimental results demonstrated the potential of the L1{sub 1} type Co{sub 0.5}Pt{sub 0.5}-C films for use in granular media applications, due to their very high K{sub u}, the relatively low fabrication temperature, and good controllability of the grain orientation.

Nanocrystalline iron nitride films with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Gupta, Ajay; Dubey, Ranu; Leitenberger, W.; Pietsch, U.

2008-01-01

Nanocrystalline α-iron nitride films have been prepared using reactive ion-beam sputtering. Films develop significant perpendicualr magnetic anisotropy (PMA) with increasing thickness. A comparison of x-ray diffraction patterns taken with scattering vectors in the film plane and out of the film plane provides a clear evidence for development of compressive strain in the film plane with thickness. Thermal annealing results in relaxation of the strain, which correlates very well with the relaxation of PMA. This suggests that the observed PMA is a consequence of the breaking of the symmetry of the crystal structure due to the compressive strain

Perpendicular Magnetic Anisotropy in FePt Patterned Media Employing a CrV Seed Layer

Directory of Open Access Journals (Sweden)

Chun Dong

2011-01-01

Full Text Available Abstract A thin FePt film was deposited onto a CrV seed layer at 400°C and showed a high coercivity (~3,400 Oe and high magnetization (900–1,000 emu/cm3 characteristic of L10 phase. However, the magnetic properties of patterned media fabricated from the film stack were degraded due to the Ar-ion bombardment. We employed a deposition-last process, in which FePt film deposited at room temperature underwent lift-off and post-annealing processes, to avoid the exposure of FePt to Ar plasma. A patterned medium with 100-nm nano-columns showed an out-of-plane coercivity fivefold larger than its in-plane counterpart and a remanent magnetization comparable to saturation magnetization in the out-of-plane direction, indicating a high perpendicular anisotropy. These results demonstrate the high perpendicular anisotropy in FePt patterned media using a Cr-based compound seed layer for the first time and suggest that ultra-high-density magnetic recording media can be achieved using this optimized top-down approach.

Perpendicular magnetic anisotropy in Co{sub X}Pd{sub 100−X} alloys for magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Clark, B.D.; Natarajarathinam, A.; Tadisina, Z.R. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487 (United States); Chen, P.J.; Shull, R.D. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Gupta, S., E-mail: Sgupta@eng.ua.edu [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487 (United States)

2017-08-15

Highlights: • CoPd alloy perpendicular anisotropy dependent on composition and thickness. • CIPT results show that TMR tracks with PMA of CoPd. • Potential replacement for Co/Pd multilayers. - Abstract: CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ’s) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L1{sub 0} alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular Co{sub x}Pd alloy-pinned Co{sub 20}Fe{sub 60}B{sub 20}/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the Co{sub x}Pd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied Co{sub x}Pd MTJ stacks. The Co{sub x}Pd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO{sub 2}/MgO (13)/Co{sub X}Pd{sub 100−x} (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

Controlling the competing magnetic anisotropy energies in FineMET amorphous thin films with ultra-soft magnetic properties

Directory of Open Access Journals (Sweden)

Ansar Masood

2017-05-01

Full Text Available Thickness dependent competing magnetic anisotropy energies were investigated to explore the global magnetic behaviours of FineMET amorphous thin films. A dominant perpendicular magnetization component in the as-deposited state of thinner films was observed due to high magnetoelastic anisotropy energy which arises from stresses induced at the substrate-film interface. This perpendicular magnetization component decreases with increasing film thickness. Thermal annealing at elevated temperature revealed a significant influence on the magnetization state of the FineMET thin films and controlled annealing steps leads to ultra-soft magnetic properties, making these thin films alloys ideal for a wide range of applications.

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

Science.gov (United States)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

Magnetic anisotropies in ultrathin bismuth iron garnet films

International Nuclear Information System (INIS)

Popova, Elena; Franco Galeano, Andres Felipe; Deb, Marwan; Warot-Fonrose, Bénédicte; Kachkachi, Hamid; Gendron, François; Ott, Frédéric

2013-01-01

Ultrathin bismuth iron garnet Bi 3 Fe 5 O 12 films were grown epitaxially on (001)-oriented gadolinium gallium garnet substrates. Film thickness varied from two to three dozens of unit cells. Bi 3 Fe 5 O 12 films grow pseudomorphically on substrates up to a thickness of 20 nm, and then a lattice relaxation occurs. Magnetic properties of the films were studied as a function of bismuth iron garnet thickness. The magnetization and cubic anisotropy decrease with decreasing film thickness. The uniaxial magnetocrystalline anisotropy is constant for all film thicknesses. For two unit cell thick films, the easy magnetization axis changes from in-plane to perpendicular to the plane direction. Such a reorientation takes place as a result of the competition of constant uniaxial perpendicular anisotropy with weakening film magnetization. - Highlights: ► Ultrathin Bi 3 Fe 5 O 12 films were grown epitaxially on structure-matching substrates. ► Magnetic properties of Bi 3 Fe 5 O 12 were studied down to the thickness of 2.5 nm. ► Reorientation of easy magnetization axis as a function of film thickness was observed

Magnetic anisotropies in ultrathin bismuth iron garnet films

Energy Technology Data Exchange (ETDEWEB)

Popova, Elena, E-mail: popova@physique.uvsq.fr [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS/Université de Versailles-Saint-Quentin, 45 Avenue des Etats-Unis, 78035 Versailles (France); Franco Galeano, Andres Felipe [Laboratoire PROcédés, Matériaux et Energie Solaire (PROMES), CNRS/Université de Perpignan Via Domitia, 52 Avenue Paul Alduy, 66860 Perpignan (France); Deb, Marwan [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS/Université de Versailles-Saint-Quentin, 45 Avenue des Etats-Unis, 78035 Versailles (France); Warot-Fonrose, Bénédicte [Centre d' Elaboration de Matériaux et d' Etudes Structurales (CEMES), CNRS, 29 rue Jeanne Marvig, 31055 Toulouse (France); Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS–Universidad de Zaragoza (Spain); Kachkachi, Hamid [Laboratoire PROcédés, Matériaux et Energie Solaire (PROMES), CNRS/Université de Perpignan Via Domitia, 52 Avenue Paul Alduy, 66860 Perpignan (France); Gendron, François [Institut des NanoSciences de Paris (INSP), CNRS/Université Pierre et Marie Curie-Paris 6, 4 place Jussieu, Boîte courrier 840, 75252 Paris Cedex 05 (France); Ott, Frédéric [Laboratoire Léon Brillouin (LLB), CNRS/CEA, Bâtiment 563, CEA Saclay, 91191 Gif sur Yvette Cedex (France); and others

2013-06-15

Ultrathin bismuth iron garnet Bi{sub 3}Fe{sub 5}O{sub 12} films were grown epitaxially on (001)-oriented gadolinium gallium garnet substrates. Film thickness varied from two to three dozens of unit cells. Bi{sub 3}Fe{sub 5}O{sub 12} films grow pseudomorphically on substrates up to a thickness of 20 nm, and then a lattice relaxation occurs. Magnetic properties of the films were studied as a function of bismuth iron garnet thickness. The magnetization and cubic anisotropy decrease with decreasing film thickness. The uniaxial magnetocrystalline anisotropy is constant for all film thicknesses. For two unit cell thick films, the easy magnetization axis changes from in-plane to perpendicular to the plane direction. Such a reorientation takes place as a result of the competition of constant uniaxial perpendicular anisotropy with weakening film magnetization. - Highlights: ► Ultrathin Bi{sub 3}Fe{sub 5}O{sub 12} films were grown epitaxially on structure-matching substrates. ► Magnetic properties of Bi{sub 3}Fe{sub 5}O{sub 12} were studied down to the thickness of 2.5 nm. ► Reorientation of easy magnetization axis as a function of film thickness was observed.

Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector

Science.gov (United States)

Lee, Dukhyung; Kim, Dai-Sik

2016-01-01

We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet’s principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet’s principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies.

Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Comes, Ryan; Gu Man; Khokhlov, Mikhail; Lu Jiwei; Wolf, Stuart A.

2012-01-01

CoFe 2 O 4 (CFO) epitaxial thin films of various thicknesses were grown on MgO substrates using the pulsed electron-beam deposition technique. The films have excellent in-plane coherence with the substrate, exhibit layer-by-layer growth and have well-defined thickness fringes in x-ray diffraction measurements. Atomic force microscopy (AFM) measurements indicate that misfit dislocations form in thicker films and the critical thickness for the dislocation formation is estimated. Perpendicular magnetic anisotropy in CFO due to epitaxial in-plane tensile strain from the substrate was found. A stripe-like domain structure in the demagnetized state is demonstrated using magnetic force microscopy (MFM), in agreement with previous predictions. Coercivity increased in thicker films, which is explained by domain wall pinning due to misfit dislocations at the CFO/MgO interface. - Highlights: → X-ray diffraction and rocking curves indicate films are amongst highest quality in the literature. → Domain structure of CoFe 2 O 4 films on MgO was found to be stripe-like using MFM. → Critical thickness for misfit dislocations estimated and agrees with experiment. → Effect of misfit dislocations on surface morphology explained. → Role of dislocations and antiphase boundaries in domain wall formation and motion explained.

Thickness dependence of magnetization reversal mechanism in perpendicularly magnetized L1{sub 0} FePt films

Energy Technology Data Exchange (ETDEWEB)

Bi, Mei; Wang, Xin, E-mail: xinwang@uestc.edu.cn; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Xie, Jianliang

2017-04-15

We have studied the magnetic switching behavior of L1{sub 0}-ordered FePt films with varying thickness. It was found that coercivity is strongly dependent on the film thickness. The obvious variations of the coercivity in the thin films are confirmed by the measurements of structural and magnetic properties. With increasing thickness, the degree of L1{sub 0} chemical ordering increased, while the magnetization reversal process transforms from a pinned two-steps magnetization reversal to a comparatively smooth domain wall motion behavior. Although considering anisotropy, exchange interaction and applied magnetic field, the switching behavior in films is quite complex, the main features of the magnetization reversal mechanism can be understood by performing detailed investigation on the effect of the deposition temperature and the angle of magnetic field. - Highlights: • Series of FePt films with L1{sub 0} phase have been prepared. • We focused on the magnetization reversal mechanism with varying thicknesses. • The angle-dependence of switching process is revealed in the FePt films. • Different switching mechanisms were found by increasing the film thickness.

Perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5/MgO bottom electrodes for magnetic tunnel junctions

International Nuclear Information System (INIS)

Li, X.Q.; Wu, Y.; Gao, S.; Xu, X.G.; Miao, J.; Jiang, Y.

2013-01-01

Perpendicular magnetic anisotropy (PMA) was achieved in annealed Co 2 FeAl 0.5 Si 0.5 (CFAS)/MgO-based multilayers with good thermal stability up to 400 °C and a large anisotropy energy density K u over 2.0 × 10 5 J/m 3 . The thickness of the full-Heusler CFAS film to maintain PMA is up to 4.8 nm in which the co-existence of disordered A2, ordered B2 and fully ordered L2 1 structures is observed. X-ray photoelectron spectroscopy analysis demonstrates that the origin of the PMA is the hybridization between Co 3d and O 2p orbitals at the CFAS/MgO interface. - Highlights: • We achieved perpendicular magnetic anisotropy (PMA) in Co 2 FeAl 0.5 Si 0.5 (4.8 nm) film; • L2 1 , B2 and A2 phases coexist in perpendicular magnetic anisotropic Co 2 FeAl 0.5 Si 0.5 ; • Magnetic properties have strong dependence on the annealing temperature; • The PMA is induced by the hybridization between Co-3d and O-2p orbitals

Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

Science.gov (United States)

Kim, Chang Soo

The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier

Perpendicular magnetic recording-Its development and realization

Energy Technology Data Exchange (ETDEWEB)

Iwasaki, Shun-ichi, E-mail: iwasaki@tohtech.ac.jp [Tohoku Institute of Technology, 35-1 Yagiyamakasumi-cho, Taihaku-ku, Sendai 982-8577 (Japan)

2012-02-15

Development of perpendicular magnetic recording is summarized along with learning from the research study. The early stage of perpendicular recording was conducted with the research philosophy of complementarity between perpendicular and horizontal recordings. Although present production of the perpendicular recording HDDs exceeds 600 million per year, development of perpendicular recording experienced the valley of death in the 1990s. The difficult period was overcome by the collaboration system of industrial and academic communities. The research on perpendicular recording brought about development of new research model as well as the historical view of the development of technology and innovation. The huge influence of perpendicular recording on society also taught us the relationship between science and technology with culture and civilization. - Research Highlights: > Discovery of circular magnetization led to idea of perpendicular recording. > SPT head and Co-Cr media were realized for practical perpendicular recording. > The complementarity between perpendicular and in-plane recording helped progress. > Death valley of research has been overcome by cooperation with potent companies. > Present mass production of HDDs is making a new civilization of the society.

A method of producing small grain Ru intermediate layers for perpendicular magnetic media

International Nuclear Information System (INIS)

Yuan Hua; Qin Yueling; Laughlin, David E.

2008-01-01

NiAl + SiO 2 thin films were used as a grain size reducing seedlayer for cobalt alloy granular perpendicular magnetic recording media. The effect of this NiAl + SiO 2 seedlayer on the microstructure and crystalline orientation of Ru intermediate layer has been investigated. By co-sputtering the composite NiAl + SiO 2 seedlayer, the smallest average grain diameter of NiAl was significantly reduced to about 2.5 nm. The grain size of the subsequent Ru intermediate layer was reduced to about 4 nm. X-ray diffraction results indicate an epitaxial orientation relationship of NiAl (110) // Ru (0002) between the two layers. Moreover, significant improvement of this epitaxial relationship was developed, which produced narrow c-axis distribution of the Ru intermediate layer with small grain size. The addition of the NiAl + SiO 2 seedlayer is a very promising approach to reduce the Ru intermediate layer grain size and eventually the magnetic layer grain size for perpendicular magnetic recording media without deterioration of other properties of thin films

YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

Science.gov (United States)

Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

2017-06-01

The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

Mn doping effect on structure and magnetism of epitaxial (FePt)1-xMnx films

International Nuclear Information System (INIS)

Huang, J.C.A.; Chang, Y.C.; Yu, C.C.; Yao, Y.D.; Hu, Y.M.; Fu, C.M.

2003-01-01

We study the structure and perpendicular magnetism of molecular beam epitaxy grown (FePt) 1-x Mn x films with doping concentration x=0, 1%, 2%, 3%, 4%, and 5%. The (FePt) 1-x Mn x films were made by multilayers growth of [Fe/Pt/Mn]xN at 100 deg. C and annealed at 600 deg. C. X-ray diffraction scans indicate that relatively better L1 0 ordered structure for low Mn doping (x 3%. The perpendicular magnetic anisotropy effect of the (FePt) 1-x Mn x films tends to decrease with the increase of Mn doping for x>1%. However, the x=1% doped films possess slightly better perpendicular magnetic anisotropy effect than the zero doped film. The perpendicular magnetic anisotropy constant are of about 1.3x10 7 and 1.6x10 7 erg/cm 3 for x=0% and x=1%, respectively

Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

Directory of Open Access Journals (Sweden)

Savio Fabretti

2014-03-01

Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

Spiraling contaminant electrons increase doses to surfaces outside the photon beam of an MRI-linac with a perpendicular magnetic field.

Science.gov (United States)

Hackett, Sara L; van Asselen, Bram; Wolthaus, Jochem W H; Bluemink, J J; Ishakoglu, Kübra; Kok, Jan G M; Lagendijk, Jan J W; Raaymakers, Bas W

2018-03-29

The transverse magnetic field of an MRI-linac sweeps contaminant electrons away from the radiation beam. Films oriented perpendicular to the magnetic field and 5cm from the radiation beam edge show a projection of the divergent beam, indicating that contaminant electrons spiral along magnetic field lines and deposit dose on surfaces outside the primary beam perpendicular to the magnetic field. These spiraling contaminant electrons (SCE) could increase skin doses to protruding regions of the patient along the cranio-caudal axis. This study investigated doses from SCE for an MRI-linac comprising a 7MV linac and a 1.5T MRI scanner. Surface doses to films perpendicular to the magnetic field and 5cm from the radiation beam edge showed increased dose within the projection of the primary beam, whereas films parallel to the magnetic field and 5cm from the beam edge showed no region of increased dose. However, the dose from contaminant electrons is absorbed within a few millimeters. For large fields, the SCE dose is within the same order of magnitude as doses from scattered and leakage photons. Doses for both SCE and scattered photons decrease rapidly with decreasing beam size and increasing distance from the beam edge. © 2018 Institute of Physics and Engineering in Medicine.

Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

Science.gov (United States)

Wu, Mingzhong

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

KAUST Repository

Tu, Kun-Hua; Fernandez Martin, Eduardo; almasi, hamid; Wang, Weigang; Navas Otero, David; Ntetsikas, Konstantinos; Moschovas, Dimitrios; Avgeropoulos, Apostolos; Ross, Caroline A

2018-01-01

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different

Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

International Nuclear Information System (INIS)

Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

2008-01-01

MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

Magnetic anisotropies in SmCo thin films

International Nuclear Information System (INIS)

Chen, K.

1993-01-01

A systemic study of the deposition processes and magnetic properties for the Sm-Co film system has been carried out. Films of Sm-Co system with various magnetic anisotropies have been synthesized through sputter deposition in both crystalline and amorphous phases. The origins of various anisotropies have been studied. Thermalized sputter deposition process control was used to synthesize Fe enriched Sm-Co films with rhombohedral Th 2 Zn 17 type structure. The film exhibited unusually strong textures with the crystallographic c axes of the crystallites aligned in the film plane. A large anisotropy was resulted with easy axis in the film plane. A well defined and large in-the-film-plane anisotropy of exceptionally high value of 3.3 x 10 6 erg/cm 3 has been obtained in the amorphous SmCo films by applying a magnetic field in the film plane during deposition. It was found that the in-the-film-plane anisotropy depended essentially on the applied field and Sm concentration. For films not synthesized through thermallized sputtering, the easy axis of the film could reoriented. A perpendicular anisotropy was also presented in the film synthesized through thermallized sputtering deposition. A large in-plane anisotropy was obtained in films deposited above ambient temperatures. It was concluded that the surface induced short range ordering was the origin of the in-the-film-phase anisotropy observed in amorphous film deposited in the presence of a magnetic field. The formation mechanism was different from that of the short range ordering induced by field annealing. The perpendicular anisotropy was shown to be growth induced. Large in-plane anisotropy in amorphous films was resulted form partial crystallization in the film. Both the formation of growth induced structure and partial crystallization in the film prevented the formation of the pair ordering and decreased in-the-film-plane anisotropy

Controlling magnetic domain wall motion in the creep regime in He+-irradiated CoFeB/MgO films with perpendicular anisotropy

International Nuclear Information System (INIS)

Herrera Diez, L.; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D.; Lamperti, A.; Mantovan, R.; Ocker, B.

2015-01-01

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He + ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H −1∕4 behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H dep . In turn, H* ≈ H dep is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion

Domain wall motion in ferromagnetic systems with perpendicular magnetization

International Nuclear Information System (INIS)

Szambolics, H.; Toussaint, J.-Ch.; Marty, A.; Miron, I.M.; Buda-Prejbeanu, L.D.

2009-01-01

Although we lack clear experimental evidence, apparently out-of-plane magnetized systems are better suited for spintronic applications than the in-plane magnetized ones, mainly due to the smaller current densities required for achieving domain wall motion. [Co/Pt] multilayers belong to the first category of materials, the out-of-plane magnetization orientation arising from the strong perpendicular magnetocrystalline anisotropy. If the magnetization arranges itself out-of-plane narrow Bloch walls occur. In the present paper, both field and current-driven domain wall motion have been investigated for this system, using micromagnetic simulations. Three types of geometries have been taken into account: bulk, thin film and wire, and for all of them a full comparison is done between the effect of the applied field and injected current. The reduction of the system's dimension induces the decrease of the critical field and the critical current, but it does not influence the domain wall displacement mechanism.

Hysteresis, critical fields and superferromagnetism of the film with perpendicular anisotropy

International Nuclear Information System (INIS)

Kalita, V.M.; Kulyk, M.M.; Ryabchenko, S.M.

2016-01-01

This paper is focused on the analysis of hysteresis and critical phenomena of magnetization reversal of superferromagnetic (SFM) state in nanogranular (NG) Co/Al 2 O 3 film with perpendicular anisotropy. It was demonstrated that the transition from the multidomain SFM state to the homogeneous SFM state, during the magnetization process, occurs critically. The value of the field of critical transition to the homogeneous state depends on the demagnetization field, granular anisotropy and interparticle exchange anisotropy. It turned out that the temperature dependence of the coercive force of the film, despite its SFM state, accords with the Neel–Brown formula for anisotropic single-domain ferromagnetic particles, but has an anomalous angular dependence. It was concluded that domain wall motion affects these features of the coercive field. The domain wall movement may occur due to the overturn of magnetic moments of particles in the boundaries between the superdomains. At the same time, the main factors influencing the coercivity are the anisotropy of the particles, which blocks their magnetic moment reorientation, and demagnetizing factor of the film. Together they lead to the anomalous angular dependence of the coercive field. - Highlights: • The transition from the multidomain SFM to homogeneous SFM state occurs critically. • The value of the critical field depends on the direction of the magnetizing field. • Critical transition field depends on the anisotropy of the interparticle exchange. • Dependence of H c (θ H ) differs from expected one for an ensemble of the particles. • Magnetization reversal occurs by turning the particle's moments in domain borders.

Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Herrera Diez, L., E-mail: liza.herrera-diez@ief.u-psud.fr; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D. [Institut d' Electronique Fondamentale, Université Paris-Sud, UMR CNRS 8622, 91405 Orsay (France); Lamperti, A.; Mantovan, R. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate (MB) (Italy); Ocker, B. [Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main (Germany)

2015-07-20

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji, E-mail: shi.j.aa@m.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Xie, Qian; Zhang, Zhengjun [Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Wang, Jian [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)

2015-03-15

To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glass substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.

Microscopic and macroscopic inhomogeneity of magnetization and anistropy in amorphous rare earth/transition metal films

International Nuclear Information System (INIS)

Hafner, D.; Hoffmann, H.

1979-01-01

Amorphous Gd/Co and Gd/Co/Mo-films are investigated by measuring the field dependence of the susceptibility. This allows a determination of the value and sign of the perpendicular uniaxial anisotropy as well as the value of the effective ripple stray field. The measurements are made at spots of 50 to 100 μm diameter, allowing one to scan the film surface. Measurements from a spot on the film surface and at the opposing spot on the film-glass substrate interface are performed simultaneously. In this way the anisotropy at two related points on both surfaces of the film can be compared. In general the results show the existence of a ripple stray field which can be accounted for by inhomogeneities in the amorphous films. The perpendicular anisotropy at the free film surface is always lower than the perpendicular anisotropy at the film-substrate interface. In some cases the magnetization at the film surface is in-plane, while at the substrate the magnetization is out-of-plane. The reduction of the perpendicular anisotropy is an ageing effect due to oxidation. (author)

Magnetic domains in Ni-Mn-Ga martensitic thin films

International Nuclear Information System (INIS)

Chernenko, V A; Anton, R Lopez; Kohl, M; Ohtsuka, M; Orue, I; Barandiaran, J M

2005-01-01

A series of martensitic Ni 52 Mn 24 Ga 24 thin films deposited on alumina ceramic substrates has been prepared by using RF(radio-frequency) magnetron sputtering. The film thickness, d, varies from 0.1 to 5.0m. Magnetic domain patterns have been imaged by the MFM (magnetic force microscopy) technique. A maze domain structure is found for all studied films. MFM shows a large out-of-plane magnetization component and a rather uniform domain width for each film thickness. The domain width, δ, depends on the film thickness as δ∝√d in the whole studied range of film thickness. This dependence is the expected one for magnetic anisotropy and magnetostatic contributions in a perpendicular magnetic domain configuration. The proportionality coefficient is also consistent with the values of saturation magnetization and magnetic anisotropy determined in the samples

Magnetic and structural properties of NdFeB thin film prepared by step annealing

International Nuclear Information System (INIS)

Serrona, Leo K.E.B.; Sugimura, A.; Fujisaki, R.; Okuda, T.; Adachi, N.; Ohsato, H.; Sakamoto, I.; Nakanishi, A.; Motokawa, M.

2003-01-01

The crystallization of the amorphous phase into the tetragonal Nd 2 Fe 14 B (PHI) phase and the corresponding changes in magnetic properties have been examined by step annealing experiment using a 2 μm thick NdFeB film sample. Microstructural and magnetic analysis indicate that the film was magnetically soft as deposited with the coercivity H ciperp -1 and the remnant magnetization 4πM rperp -1 was developed and diffraction analysis showed evidence of PHI phase 002l peaks being aligned perpendicular to the film plane. At an optimum annealing temperature of 575 deg. C, the remnant magnetization of this anisotropic thin film is around 0.60 T with intrinsic coercivity of ∼1340 kA m -1 . Annealing the film sample at 200 deg. C≤T ann ≤750 deg. C showed variations in magnetic properties that were mostly due to the change in the perpendicular anisotropy. Based on 4πM sperpendicular values plotted against T ann , a dip in 4πM sperpendicular values was observed as T ann increased in the soft-to-hard magnetic characteristics transition region and rose as the hard crystalline phase started to form. The results show that the magnetic properties of the NdFeB film were slightly influenced by the presence of NdO, film surface roughening and the small increase in crystal size as a consequence of repeated heat treatment. At T ann ∼300 deg. C, the nominal saturation magnetization indicated a certain degree of weak perpendicular magnetic anisotropy in the film sample considered to be essential in the enhancement of coercivity in crystallized films

Magnetic properties of laser deposited films of Y-Ba-Cu-O

Energy Technology Data Exchange (ETDEWEB)

McGuire, T.R.; Dimos, D.; Gupta, A.; Koren, G.; Laibowitz, R.B. (IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598 (USA))

1990-05-01

Films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} prepared by laser ablation deposition show epitaxial growth on (100) SrTiO{sub 3} substrates with the {ital c} axis perpendicular to the plane of the film. With the magnetic field ({ital H}) parallel to the {ital c} axis, critical currents of up to 40 MA/cm{sup 2} from magnetization measurements are obtained. With {ital H} perpendicular to the {ital c} axis, various magnetization measurements with field cooling in 40 kOe indicated strong pinning effects with a calculated critical current density significantly higher than that observed in the parallel field configuration.

Perpendicular relativistic shocks in magnetized pair plasma

Science.gov (United States)

Plotnikov, Illya; Grassi, Anna; Grech, Mickael

2018-04-01

Perpendicular relativistic (γ0 = 10) shocks in magnetized pair plasmas are investigated using two dimensional Particle-in-Cell simulations. A systematic survey, from unmagnetized to strongly magnetized shocks, is presented accurately capturing the transition from Weibel-mediated to magnetic-reflection-shaped shocks. This transition is found to occur for upstream flow magnetizations 10-3 10-2, it leaves place to a purely electromagnetic precursor following from the strong emission of electromagnetic waves at the shock front. Particle acceleration is found to be efficient in weakly magnetized perpendicular shocks in agreement with previous works, and is fully suppressed for σ > 10-2. Diffusive Shock Acceleration is observed only in weakly magnetized shocks, while a dominant contribution of Shock Drift Acceleration is evidenced at intermediate magnetizations. The spatial diffusion coefficients are extracted from the simulations allowing for a deeper insight into the self-consistent particle kinematics and scale with the square of the particle energy in weakly magnetized shocks. These results have implications for particle acceleration in the internal shocks of AGN jets and in the termination shocks of Pulsar Wind Nebulae.

Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

International Nuclear Information System (INIS)

Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

2013-01-01

FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

Magnetic and transport properties of single and double perpendicular magnetic tunnel junctions

International Nuclear Information System (INIS)

Cuchet, Lea

2015-01-01

Due to their advantageous properties in terms of data retention, storage density and critical current density for Spin Transfer Torque (STT) switching, the magnetic tunnel junctions with perpendicular anisotropy have become predominant in the developments for MRAM applications. The aim of this thesis is to improve the anisotropy and transport properties of such structures and to realize even more complex stacks such as perpendicular double junctions. Studies on the magnetic properties and Tunnel Magnetoresistance (TMR) measurements showed that to optimize the performances of the junctions, all the thicknesses of the different layers constituting the stack have to be adapted. To guaranty both a large TMR as well a strong perpendicular anisotropy, compromises are most of the time needed. Studies as a function of magnetic thickness enabled to extract the saturation magnetization, the critical thickness and the magnetic dead layer thickness both in the bottom reference and the top storage layer in structures capped with Ta. This type of junction could be tested electrically after patterning the sample into nano-pillars. Knowing that perpendicular anisotropy mostly arises at the metal/oxide interface, the Ta capping layer was replaced by a MgO one, leading to a huge increase in the anisotropy of the free layer. A second top reference was then added on such a stack to create functional perpendicular double junctions. CoFeB/insertion/CoFeB synthetic antiferromagnetic storage layers could be developed and were proved to be stable enough to replace the standard Co/Pt-based reference layers. (author) [fr

Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure

International Nuclear Information System (INIS)

Sato, N.

1986-01-01

An alternating terbium-iron (Tb-Fe) multilayer structure artificially made in amorphous Tb-Fe thin films gives rise to excellent magnetic properties of large perpendicular uniaxial anisotropy, large saturation magnetization, and large coercivity over a wide range of Tb composition in the films. The films are superior to amorphous Tb-Fe alloy thin films, especially when they are piled up with a monatomic layer of Tb and several atomic layers of Fe in an alternating fashion. Small-angle x-ray diffraction analysis confirmed the layering of monatomic layers of Tb and Fe, where the periodicity of the layers was found to be about 5.9 A. Direct evidence for an artificially layered structure was obtained by transmission electron microscopic and Auger electron spectroscopic observations. Together with magnetic measurements of hysteresis loops and torque curves, it has been concluded that the most important origin of the large magnetic uniaxial anisotropy can be attributed to the Tb-Fe pairs aligned perpendicular to the films

Uniaxial anisotropy in magnetite thin film-Magnetization studies

International Nuclear Information System (INIS)

Wiechec, A.; Korecki, J.; Handke, B.; Kakol, Z.; Owoc, D.; Antolak, D.A.; Kozlowski, A.

2006-01-01

Magnetization and electrical resistivity measurements have been performed on a stoichiometric single crystalline magnetite Fe 3 O 4 thin film (thickness of ca. 500 nm) MBE deposited on MgO (1 0 0) substrate. The aim of these studies was to check the influence of preparation method and sample form (bulk vs. thin film) on magnetic anisotropy properties in magnetite. The film magnetization along versus applied magnetic field has been determined both in the direction parallel and perpendicular to the film surface, and at temperatures above and below the Verwey transition. We have found, in agreement with published results, that the in-plane field of 10 kOe was not sufficient to saturate the sample. This can be understood if some additional factor, on top of the bulk magnetocrystalline anisotropy, is taken into account

The magnetic characteristics of perpendicular magnetic tunnel junction with MgO and Al-O oxidation layers in various thickness

International Nuclear Information System (INIS)

Chen, T.-J.; Canizo-Cabrera, A.; Chang, C.-H.; Liao, K.-A.; Li, Simon C.; Hou, C.-K.; Wu Teho

2006-01-01

In this work we show the magnetic characteristics of perpendicular magnetic tunnel junction (pMTJ) with different oxidation layers. The pMTJs structures were made by RF and DC magnetron sputtering. Individual depositions of magnesium oxide layers and of aluminum oxide films were prepared by plasma oxidation. The experimental results showed that the initial switching field was decreased as the magnesium oxide thickness was increased. Further work of the aluminum oxide surface roughness and hysteresis loop influenced by different oxidation layers on pMTJs structures will be discussed as well

Angular dependence of the irreversible magnetization of YBa2Cu3O7 superconducting thin films

International Nuclear Information System (INIS)

Thrane, B.P.; Schlenker, C.; Dumas, J.; Buder, R.

1996-01-01

YBa 2 Cu 3 O 7 superconducting thin films have been studied by magnetization measurements in oblique fields up to 0.8 T both at low temperature and at temperatures close to T c . Both components of magnetization parallel and perpendicular to the applied field could be measured with two pairs of crossed detection coils. In all cases the magnetization is found to be perpendicular to the film plane. This is due to the self-field effects related to the thin-film geometry which force the critical currents to circulate along the film plane. At low temperature the properties are found to depend only on the component of the applied magnetic field perpendicular to this plane, as expected in the situation where demagnetizing field effects are dominant. However, at temperatures close to T c the critical currents and therefore the pinning are found to increase when the applied field approaches the film plane. This is attributed to the effect of intrinsic pinning which may be related to the kink structure of the vortices in oblique fields. copyright 1996 The American Physical Society

Magnetic and exchange bias properties of YCo thin films and IrMn/YCo bilayers

Science.gov (United States)

Venkat Narayana, M.; Manivel Raja, M.; Jammalamadaka, S. Narayana

2018-02-01

We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 Å/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 Å/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Luo, Linqiang, E-mail: LL6UK@virginia.edu [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Kabir, Mehdi [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Dao, Nam; Kittiwatanakul, Salinporn [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Cyberey, Michael [Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Institute of Defense Analyses, Alexandria, VA 22311 (United States); Stan, Mircea [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Lu, Jiwei [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States)

2017-06-15

Highlights: • 500 nm size nano-pillar device was fabricated by photolithography techniques. • A magnetic hybrid structure was achieved with perpendicular magnetic fields. • Spin torque switching and oscillation was demonstrated in the large sized device. • Micromagnetic simulations accurately reproduced the experimental results. • Simulations demonstrated the synchronization of magnetic inhomogeneities. - Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co{sub 90}Fe{sub 10}/Cu/Ni{sub 80}Fe{sub 20} pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co{sub 90}Fe{sub 10}) and free layer (Ni{sub 80}Fe{sub 20}) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. A magnetic hybrid structure was achieved for the study of spin torque oscillation by applying a perpendicular field >3 kOe. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogeneities in large sized device. The ability to manipulate spin-dynamics on large size devices could be proved useful for increasing the output power of the spin-transfer nano-oscillators (STNOs).

Interaction of Mutually Perpendicular Magnetic Fields in HTSC

Directory of Open Access Journals (Sweden)

Vasilyev Aleksandr Fedorovich

2015-11-01

Full Text Available In this article a problem of interaction of the crossed magnetic fields in superconductors is considered. Superconducting materials have nonlinear magnetic properties. It allows using a non-linear magnetic susceptibility for measurement of feeble magnetic fields. We place a wire of superconducting material in a constant parallel uniform magnetic field. Then we let through a wire the alternating current leak. Interaction of mutual and perpendicular variation magnetic fields, with adequate accuracy is described by Ginzburg-Landau's equations. Approximate solution of the written equations is received. The component of a magnetic field parallel to a wire contains a variable component. Frequency of a variable component of the magnetic field is equal to the doubled current frequency. Amplitude of the variable component of the magnetic field is proportional to strength of the constant magnetic field. The experimental installation for research of interaction of mutually perpendicular magnetic fields is created. The cylinder from HTSC of ceramics of the YBa2Cu3O7-x was used as a sensor. Dependence of amplitude of the second harmonica of a variation magnetic field on strength of a constant magnetic field is received.

NON-AXISYMMETRIC PERPENDICULAR DIFFUSION OF CHARGED PARTICLES AND THEIR TRANSPORT ACROSS TANGENTIAL MAGNETIC DISCONTINUITIES

Energy Technology Data Exchange (ETDEWEB)

Strauss, R. D.; Engelbrecht, N. E.; Dunzlaff, P. [Center for Space Research, North-West University, Potchefstroom, 2522 (South Africa); Roux, J. A. le [Center for Space Plasma and Aeronomic Research, University of Alabama in Huntsville, Huntsville, AL 3585 (United States); Ruffolo, D., E-mail: dutoit.strauss@nwu.ac.za [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand)

2016-07-01

We investigate the transport of charged particles across magnetic discontinuities, focusing specifically on stream interfaces associated with co-rotating interaction regions in the solar wind. We argue that the magnetic field fluctuations perpendicular to the magnetic discontinuity, and usually also perpendicular to the mean magnetic field, are strongly damped in the vicinity of such a magnetic structure, leading to anisotropic perpendicular diffusion. Assuming that perpendicular diffusion arises from drifts in a turbulent magnetic field, we adopt a simplified approach to derive the relevant perpendicular diffusion coefficient. This approach, which we believe gives the correct principal dependences as expected from more elaborate calculations, allows us to investigate transport in different turbulent geometries, such as longitudinal compressional turbulence that may be present near the heliopause. Although highly dependent on the (possibly anisotropic) perpendicular length scales and turbulence levels, we generally find perpendicular diffusion to be strongly damped at magnetic discontinuities, which may in turn provide an explanation for the large particle gradients associated with these structures.

Thermal fluctuations in perpendicular recording media: New methodology for estimation of activation moment

International Nuclear Information System (INIS)

Mamiya, H; Oba, Y; Ohnuma, M; Hagiya, H; Oku, T; Suzuki, J; Yokoyama, M; Nishihara, Y; Katayama, T; Awano, H; Koda, T

2011-01-01

In nanoparticulate films with perpendicular magnetic anisotropy, a large demagnetizing field almost compensates for the experimentally designed change in the magnetic field applied parallel to the film normal. We propose a new method based on field-cycling to eliminate the uncertainty in the demagnetizing response from the analysis of the activation volume of the reversal or magnetic activation moment in such films. In this method, the applied field induced variation in the magnetic relaxation rate is measured before the effect of the demagnetizing field becomes dominant. We also discuss an analogical thermal-cycling method to clarify the temperature dependence of the barrier height for magnetization reversal in a magnetic field. We apply these methods to a Co 74 Pt 16 Cr 10 -SiO 2 nanoparticulate film as an example. The results demonstrate that these methods are useful for studying thermal fluctuations in perpendicular recording media.

Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

KAUST Repository

Tao, B. S.

2014-09-08

Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

KAUST Repository

Tao, B. S.; Li, D. L.; Yuan, Z. H.; Liu, H. F.; Ali, S. S.; Feng, J. F.; Wei, H. X.; Han, X. F.; Liu, Y.; Zhao, Y. G.; Zhang, Q.; Guo, Zaibing; Zhang, Xixiang

2014-01-01

Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Directory of Open Access Journals (Sweden)

Weisheng Zhao

2016-01-01

Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

Studies in perpendicular magnetic recording

Science.gov (United States)

Valcu, Bogdan F.

This dissertation uses both micromagnetic simulation and analytical methods to analyze several aspects of a perpendicular recording system. To increase the head field amplitude, the recording layer is grown on top of a soft magnetic layer (keeper). There is concern about the ability of the keeper to conduct the magnetic flux from the head at high data rates. We compute numerically the magnetization motion of the soft underlayer during the reversal process. Generation of non-linear spin waves characterizes the magnetization dynamics in the keeper, the spins are oscillating with a frequency higher than that of the reversal current. However, the recording field applied to the data layer follows the time dependence of the input wave form. The written transition shape is determined by the competition between the head field gradient and the demagnetizing field gradient. An analytical slope model that takes into consideration the angular orientation of the applied field is used to estimate the transition parameter; agreement is shown with the micromagnetic results. On the playback side, the reciprocity principle is applied to calculate the read out signal from a single magnetic transition in the perpendicular medium. The pulse shape is close to an error-function, going through zero when the sensor is above the transition center and decaying from the peak to an asymptotic value when the transition center is far away. Analytical closed forms for both the slope in the origin and the asymptotic value show the dependence on the recording geometry parameters. The Signal-to-Noise Ratio is calculated assuming that the noise is dominated by the medium jitter. To keep the SNR at a readable level while increasing the areal density, the average magnetic grain diameter must decrease; consequently grain size fluctuations will affect the thermal decay. We performed Transmission Electron Microscopy measurements and observed differences in the grain size distribution between various types

Tailoring perpendicular magnetic anisotropy with graphene oxide membranes

KAUST Repository

Ning, Keyu; Liu, Houfang; Li, Linsen; Li, Huanglong; Feng, Jiafeng; Yang, Baishun; Liu, Xiao; Li, Yuxing; Chen, Yanhui; Wei, Hongxiang; Han, Xiufeng; Mao, Shengcheng; Zhang, Xixiang; Yang, Yi; Ren, Tian-ling

2017-01-01

Graphene oxide (GO) membranes have been widely explored for their excellent physical and chemical properties, and abundant functional groups. In this work, we report the improvement of the perpendicular magnetic anisotropy (PMA) of CoFeB thin films by applying a coating of GO membranes. We observe that the PMA of the CoFeB/MgAl–O stacks is strongly enhanced by the coating of GO membranes and even reaches 0.6 mJ m−2 at room temperature after an annealing process. The critical thickness of the membrane-coated CoFeB for switching the magnetization from the out-of-plane to the in-plane axis exceeds 1.6 nm. First-principle calculations are performed to investigate the contribution of the GO membranes to the magnetic anisotropy energy (MAE). Due to changes in the hybridization of 3d orbitals, varying the location of the C atomic layer with Co changes the contribution of the Co–C stacks to PMA. Thus, the large PMA achieved with GO membranes can be attributed to the orbital hybridization of the C and O atoms with the Co orbitals. These results provide a comprehensive understanding of the PMA and point towards opportunities to achieve multifunctional graphene-composite spintronic devices.

Tailoring perpendicular magnetic anisotropy with graphene oxide membranes

KAUST Repository

Ning, Keyu

2017-11-15

Graphene oxide (GO) membranes have been widely explored for their excellent physical and chemical properties, and abundant functional groups. In this work, we report the improvement of the perpendicular magnetic anisotropy (PMA) of CoFeB thin films by applying a coating of GO membranes. We observe that the PMA of the CoFeB/MgAl–O stacks is strongly enhanced by the coating of GO membranes and even reaches 0.6 mJ m−2 at room temperature after an annealing process. The critical thickness of the membrane-coated CoFeB for switching the magnetization from the out-of-plane to the in-plane axis exceeds 1.6 nm. First-principle calculations are performed to investigate the contribution of the GO membranes to the magnetic anisotropy energy (MAE). Due to changes in the hybridization of 3d orbitals, varying the location of the C atomic layer with Co changes the contribution of the Co–C stacks to PMA. Thus, the large PMA achieved with GO membranes can be attributed to the orbital hybridization of the C and O atoms with the Co orbitals. These results provide a comprehensive understanding of the PMA and point towards opportunities to achieve multifunctional graphene-composite spintronic devices.

Influence of stresses and magnetostriction on the soft magnetic behavior of metallic films

NARCIS (Netherlands)

Chezan, AR; Craus, CB; Chechenin, NG; Vystavel, T; Niesen, L; De Hosson, JTM; Boerma, DO

Nanocrystalline soft magnetic Fe-Zr-N films have been successfully deposited by DC magnetron reactive sputtering. For thick films (>200 nm), the compressive stress in the as-deposited films and the positive matgnetostriction produce perpendicular anisotropy. The magnitude of this effect is smaller

Magnetic droplets in nano-contact spin-torque oscillators with perpendicular magnetic anisotropy

Science.gov (United States)

Åkerman, Johan

2013-03-01

The theoretical prediction, by Ivanov and Kosevich, of ``magnon drop'' solitons in thin films with perpendicular magnetic anisotropy (PMA) and zero damping, dates back to the 1970s. More recently, Hoefer, Silva and Keller, demonstrated analytically and numerically that related ``magnetic droplet'' solitons should be possible to excite in nano-contact spin-torque oscillators (NC-STOs) based on PMA materials, where spin transfer torque locally realizes the zero-damping condition required in. In my talk, I will present the first experimental demonstration of such magnetic droplets, realized using 50-100 nm diameter nano-contacts (NCs) fabricated on top of orthogonal GMR stacks of Co8/Cu/Co0.3[Ni0.8/Co0.4]x4 (thicknesses in nm). The nucleation of a magnetic droplet manifests itself as a dramatic 10 GHz drop in microwave signal frequency at a drive-current dependent critical perpendicular field of the order of 0.5 - 1 T. The drop in frequency is accompanied by a simultaneous sharp resistance increase of the device and a sign change of its magnetoresistance, directly indicating the existence of a reversed magnetization in a region of the [Co/Ni] free layer underneath the NC. As predicted by numerical simulations the droplet exhibits rich magnetodynamic properties, experimentally observed as auto-modulation at approximately 1 GHz and sometimes sidebands at 1/2 and 3/2 of the fundamental droplet frequency. The 1 GHz modulation can be shown numerically to be related to the drift instability of the droplet, albeit with enough restoring force to make the droplet perform a periodic motion instead of leaving the NC region. The sidebands at 1/2 and 3/2 the droplet frequency are related to eigenmodes of the droplet perimeter. Magnetic droplet nucleation is found to be robust and reproducible over a wide number of NC-STOs with different NC sizes, making this new nanomagnetic object as fundamental and potentially useful to nanomagnetism as e.g. domain walls and vortices. Support

Electrodeposited Ni-W magnetic thin films with columnar nanocrystallites

International Nuclear Information System (INIS)

Sulitanu, N.; Brinza, F.

2002-01-01

Nanocrystalline Ni-W thin films (140 nm) containing from zero to 18 wt % W were electrolytically prepared and structural and magnetic characterized. XRD, SEM and TEM investigations have revealed that all segregated Ni columns are fcc-type whose [111] axis is oriented perpendicular to the film plane and have 140 nm in height and 6-27 nm in diameter. Depending on film composition, two types of nanostructures were observed: (a) single-phase nanostructure ( i nterphases , namely W enriched particles boundaries, and (b) two-phase nanostructure (7-18 wt %) in which a second Ni-W amorphous phase or even amorphous-disordered mixture separates the magnetic columnar Ni nanocrystallites (d = 6-14 nm). The columnar crystallites have an easy magnetization direction along their long axis mainly due to the in-plane internal biaxial stresses. Magnetic characteristics of prepared thin films are presented. (Authors)

Micromagnetic study of skyrmion stability in confined magnetic structures with perpendicular anisotropy

Science.gov (United States)

Novak, R. L.; Garcia, F.; Novais, E. R. P.; Sinnecker, J. P.; Guimarães, A. P.

2018-04-01

Skyrmions are emerging topological spin structures that are potentially revolutionary for future data storage and spintronics applications. The existence and stability of skyrmions in magnetic materials is usually associated to the presence of the Dzyaloshinskii-Moriya interaction (DMI) in bulk magnets or in magnetic thin films lacking inversion symmetry. While some methods have already been proposed to generate isolated skyrmions in thin films with DMI, a thorough study of the conditions under which the skyrmions will remain stable in order to be manipulated in an integrated spintronic device are still an open problem. The stability of such structures is believed to be a result of ideal combinations of perpendicular magnetic anisotropy (PMA), DMI and the interplay between geometry and magnetostatics. In the present work we show some micromagnetic results supporting previous experimental observations of magnetic skyrmions in spin-valve stacks with a wide range of DMI values. Using micromagnetic simulations of cobalt-based disks, we obtain the magnetic ground state configuration for several values of PMA, DMI and geometric parameters. Skyrmion numbers, corresponding to the topological charge, are calculated in all cases and confirm the occurrence of isolated, stable, axially symmetric skyrmions for several combinations of DMI and anisotropy constant. The stability of the skyrmions in disks is then investigated under magnetic field and spin-polarized current, in finite temperature, highlighting the limits of applicability of these spin textures in spintronic devices.

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

International Nuclear Information System (INIS)

Chen, S.C.; Kuo, P.C.; Sun, A.C.; Chou, C.Y.; Fang, Y.H.; Wu, T.H.

2006-01-01

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H c- parallel ) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film

NANO-MULTILAYERS WITH HIGH PERPENDICULAR ANISOTROPY FOR MAGNETIC RECORDING

Institute of Scientific and Technical Information of China (English)

T. Yang; B.H. Li; K. Kang; T. Suzuki

2003-01-01

(FePt/Ag)n nano-multilayers were deposited on MgO (100) single crystal with laser ablation and then subjected to annealing. FePt L1o grains with (001) texture and thus a large perpendicular magnetic anisotropy constant Ku of the order of 106J/m3 were formed. A thick Ag layer is found to be favorable for decreasing the dispersion of the easy axis for magnetization. The measurement of time decay of magnetization gave rise to a small activation volume of the order of 10-25 m3, showing the promising of being the recording medium for future high density perpendicular recording.

Amplification of perpendicular and parallel magnetic fields by cosmic ray currents

Science.gov (United States)

Matthews, J. H.; Bell, A. R.; Blundell, K. M.; Araudo, A. T.

2017-08-01

Cosmic ray (CR) currents through magnetized plasma drive strong instabilities producing amplification of the magnetic field. This amplification helps explain the CR energy spectrum as well as observations of supernova remnants and radio galaxy hotspots. Using magnetohydrodynamic simulations, we study the behaviour of the non-resonant hybrid (NRH) instability (also known as the Bell instability) in the case of CR currents perpendicular and parallel to the initial magnetic field. We demonstrate that extending simulations of the perpendicular case to 3D reveals a different character to the turbulence from that observed in 2D. Despite these differences, in 3D the perpendicular NRH instability still grows exponentially far into the non-linear regime with a similar growth rate to both the 2D perpendicular and 3D parallel situations. We introduce some simple analytical models to elucidate the physical behaviour, using them to demonstrate that the transition to the non-linear regime is governed by the growth of thermal pressure inside dense filaments at the edges of the expanding loops. We discuss our results in the context of supernova remnants and jets in radio galaxies. Our work shows that the NRH instability can amplify magnetic fields to many times their initial value in parallel and perpendicular shocks.

Analytical calculation of the torque exerted between two perpendicularly magnetized magnets

Science.gov (United States)

Allag, H.; Yonnet, J.-P.; Latreche, M. E. H.

2011-04-01

Analytical expressions of the torque on cuboidal permanent magnets are given. The only hypothesis is that the magnetizations are rigid, uniform, and perpendicularly oriented. The analytical calculation is made by replacing magnetizations by distributions of magnetic charges on the magnet poles. The torque expressions are obtained using the Lorentz force method. The results are valid for any relative magnet position, and the torque can be obtained with respect to any reference point. Although these expressions seem rather complicated, they enable an extremely fast and accurate torque calculation on a permanent magnet in the presence of a magnetic field of another permanent magnet.

Tuning the effective parameters in (Ta/Cu/[Ni/Co]x/Ta) multilayers with perpendicular magnetic anisotropy

Science.gov (United States)

Ayareh, Zohreh; Moradi, Mehrdad; Mahmoodi, Saman

2018-06-01

In this paper, we report perpendicular magnetic anisotropy (PMA) in a (Ta/Cu/[Ni/Co]x/Ta) multilayers structure. These typical structures usually include a multilayer of ferromagnetic and transition metal thin films. Usually, magnetic anisotropy is characterized by magnetization loops determined by magnetometer or magneto-optical Kerr effect (MOKE). The interface between ferromagnetic and metallic layers plays an important role in magnetic anisotropy evolution from out-of-plane to in-plane in (Ta/Cu/[Ni/Co]/Ta) structure. Obtained results from MOKE and magnetometry of these samples show that they have different easy axes due to change in thickness of Cu as spacer layer and difference in number of repetition of [Ni/Co] stacks.

Annealing effect on magnetic property and recording performance of [FePt/MgO]n perpendicular magnetic recording media

International Nuclear Information System (INIS)

Suzuki, Takao; Zhang, Zhengang; Singh, Amarendra K.; Yin, Jinhua; Perumal, A.; Osawa, Hiroshi

2005-01-01

Granular-type FePt perpendicular magnetic recording media with (001)-texture, obtained by annealing FePt/MgO multilayer films, are fabricated onto 2.5-in glass discs. For the sake of spin-stand testing, the coercivity of FePt films is carefully modulated by controlling the annealing conditions. With annealing, exchange coupling between FePt grains is decreased, indicated by the reductions in α value and activation volume. FePt ordering process is dependent on initial FePt/MgO multilayer structures, which governs the optimum annealing condition regarding coercivities and α(=4π(dM/dH)H=Hc). The SNR ratio exhibits a sensitive dependence on initial FePt/MgO multilayer structures as well as annealing conditions

High-frequency domain wall excitations in magnetic garnet films with in-plane magnetization

International Nuclear Information System (INIS)

Synogach, V.T.; Doetsch, H.

1996-01-01

Magnetic garnet films of compositions (YBi) 3 Fe 5 O 12 and (LuBi) 3 Fe 5 O 12 are grown by liquid-phase epitaxy on [110]- and [100]-oriented substrates of gadolinium gallium garnet, respectively. All films have in-plane magnetization. 180 degree and 90 degree domain walls in these films are studied by microwave technique. In addition to the known low-frequency mode of wall translation new multiple resonant modes of both 90 degree and 180 degree domain walls with very small linewidth (4.2 MHz) are observed at frequencies near 1 GHz. Resonances are effectively excited by an rf magnetic field which is parallel or perpendicular to the wall plane. Resonance frequencies are shown to have nonlinear dispersion dependence on the mode number: they decrease with increasing in-plane magnetic field normal to the wall plane. copyright 1996 The American Physical Society

Perpendicular magnetic anisotropy of CoFeB\\Ta bilayers on ALD HfO2

Directory of Open Access Journals (Sweden)

Bart F. Vermeulen

2017-05-01

Full Text Available Perpendicular magnetic anisotropy (PMA is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\\CoFe(B interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\\Ta bilayer deposited on amorphous high-κ dielectric (relative permittivity κ=20 HfO2, grown by atomic layer deposition (ALD. PMA with interfacial anisotropy energy Ki up to 0.49 mJ/m2 appears after annealing the stacks between 200°C and 350°C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350°C coincides with the onset of interdiffusion in the materials. High-κ dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA. The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-κ dielectrics.

X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy of tetragonal Mn72Ge28 epitaxial thin film

Science.gov (United States)

Kim, Jinhyeok; Mizuguchi, Masaki; Inami, Nobuhito; Ueno, Tetsuro; Ueda, Shigenori; Takanashi, Koki

2018-04-01

An epitaxially grown Mn72Ge28 film with a tetragonal crystal structure was fabricated. It was clarified that the film had a perpendicular magnetization and a high perpendicular magnetic anisotropy energy of 14.3 Merg/cm3. The electronic structure was investigated by X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy. The obtained X-ray magnetic circular dichroism spectrum revealed that the Mn orbital magnetic moment governed the magnetocrystalline anisotropy of the Mn72Ge28 film. A doublet structure was observed for the Mn 2p3/2 peak of hard X-ray photoelectron spectrum, indicating the spin exchange interaction between the 2p core-hole and 3d valence electrons.

Quantum capacitance of an ultrathin topological insulator film in a magnetic field

KAUST Repository

Tahir, M.; Sabeeh, K.; Schwingenschlö gl, Udo

2013-01-01

We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and hybridization energies are varied relative to each other. This leads to a change in the character of the magnetocapacitance at the charge neutrality point. We further show that in the presence of both Zeeman interaction and hybridization the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high perpendicular magnetic field. In addition, we address the crossover from perpendicular to parallel magnetic field and find consistency with recent experimental data.

Quantum capacitance of an ultrathin topological insulator film in a magnetic field

KAUST Repository

Tahir, M.

2013-02-12

We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and hybridization energies are varied relative to each other. This leads to a change in the character of the magnetocapacitance at the charge neutrality point. We further show that in the presence of both Zeeman interaction and hybridization the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high perpendicular magnetic field. In addition, we address the crossover from perpendicular to parallel magnetic field and find consistency with recent experimental data.

Perpendicular magnetic anisotropy at the interface between ultrathin Fe film and MgO studied by angular-dependent x-ray magnetic circular dichroism

Energy Technology Data Exchange (ETDEWEB)

Okabayashi, J. [Research Center for Spectrochemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Koo, J. W.; Mitani, S. [National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577 (Japan); Sukegawa, H. [National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Takagi, Y.; Yokoyama, T. [Institute of Molecular Science, Okazaki, Aichi 444-8585 (Japan)

2014-09-22

Interface perpendicular magnetic anisotropy (PMA) in ultrathin Fe/MgO (001) has been investigated using angular-dependent x-ray magnetic circular dichroism (XMCD). We found that anisotropic orbital magnetic moments deduced from the analysis of XMCD contribute to the large PMA energies, whose values depend on the annealing temperature. The large PMA energies determined from magnetization measurements are related to those estimated from the XMCD and the anisotropic orbital magnetic moments through the spin-orbit interaction. The enhancement of anisotropic orbital magnetic moments can be explained mainly by the hybridization between the Fe 3d{sub z}{sup 2} and O 2p{sub z} states.

Angular tuning of the magnetic birefringence in rippled cobalt films

Energy Technology Data Exchange (ETDEWEB)

Arranz, Miguel A., E-mail: MiguelAngel.Arranz@uclm.es [Facultad de Ciencias y Tecnologías Químicas, Universidad de Castilla-La Mancha, Avda. Camilo J. Cela 10, 13071 Ciudad Real (Spain); Colino, José M. [Instituto de Nanociencia, Nanotecnología y Materiales Moleculares, Universidad de Castilla-La Mancha, Campus de la Fábrica de Armas, 45071 Toledo (Spain)

2015-06-22

We report the measurement of magnetically induced birefringence in rippled Co films. For this purpose, the magneto-optical properties of ion beam eroded ferromagnetic films were studied using Kerr magnetometry and magnetic birefringence in the transmitted light intensity. Upon sufficient ion sculpting, these ripple surface nanostructures developed a defined uniaxial anisotropy in the in-plane magnetization, finely tuning the magnetic birefringence effect. We have studied its dependence on the relative orientation between the ripple direction and the magnetic field, and found this effect to be dramatically correlated with the capability to neatly distinguish the mechanisms for the in-plane magnetization reversal, i.e., rotation and nucleation. This double refraction corresponds univocally to the two magnetization axes, parallel and perpendicular to the ripples direction. We have also observed that tuned birefringence in stack assemblies of rippled Co films, which enables us to technically manipulate the number and direction of refraction axes.

Angular tuning of the magnetic birefringence in rippled cobalt films

International Nuclear Information System (INIS)

Arranz, Miguel A.; Colino, José M.

2015-01-01

We report the measurement of magnetically induced birefringence in rippled Co films. For this purpose, the magneto-optical properties of ion beam eroded ferromagnetic films were studied using Kerr magnetometry and magnetic birefringence in the transmitted light intensity. Upon sufficient ion sculpting, these ripple surface nanostructures developed a defined uniaxial anisotropy in the in-plane magnetization, finely tuning the magnetic birefringence effect. We have studied its dependence on the relative orientation between the ripple direction and the magnetic field, and found this effect to be dramatically correlated with the capability to neatly distinguish the mechanisms for the in-plane magnetization reversal, i.e., rotation and nucleation. This double refraction corresponds univocally to the two magnetization axes, parallel and perpendicular to the ripples direction. We have also observed that tuned birefringence in stack assemblies of rippled Co films, which enables us to technically manipulate the number and direction of refraction axes

Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

Science.gov (United States)

Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

2017-07-01

We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

Directory of Open Access Journals (Sweden)

Keyu Ning

2017-01-01

Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

Manipulating magnetic anisotropy of the ultrathin Co2FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

International Nuclear Information System (INIS)

Wen, F.S.; Xiang, J.Y.; Hao, C.X.; Zhang, F.; Lv, Y.F.; Wang, W.H.; Hu, W.T.; Liu, Z.Y.

2013-01-01

The ultrathin films of Co 2 FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films. - Highlights: • Different Pt orientations lead to different magnetic anisotropy for sandwiched ultrathin CFA films. • The Pt (111) orientation favors the perpendicular anisotropy for CFA layer. • Temperature and thickness-induced spin reorientation transitions were investigated in sandwiched ultrathin CFA films. • 0.8 nm CFA film is good candidate as electrode in magnetic tunnel junctions

Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

International Nuclear Information System (INIS)

Guo, Peng; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Fang, Bin; Zhang, Baoshun; Zeng, Zhongming

2015-01-01

We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed

Critical behaviour of magnetic thin film with Heisenberg spin-S model

International Nuclear Information System (INIS)

Masrour, R.; Hamedoun, M.; Bouslykhane, K.; Hourmatallah, A.; Benzakour, N.; Benyoussef, A.

2009-01-01

The magnetic properties of a ferromagnetic thin film of face centered cubic (FCC) lattice with Heisenberg spin-S are examined using the high-temperature series expansions technique extrapolated with Pade approximations method. The critical reduced temperature of the system τ c is studied as function of thickness of the film and the exchange interactions in the bulk, and within the surfaces J b , J s and J perpendicular respectively. A critical value of surface exchange interaction above which surface magnetism appears is obtained. The dependence of the reduced critical temperature on the film thickness L has been investigated.

Magnetic properties dependence on the coupled effects of magnetic fields on the microstructure of as-deposited and post-annealed Co/Ni bilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Franczak, Agnieszka [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science, Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Levesque, Alexandra, E-mail: alexandra.levesque@univ-reims.fr [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Coïsson, Marco [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Li, Donggang [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 110004 Shenyang (China); Barrera, Gabriele [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Università di Torino, Dipartimento di Chimica, 10125 Torino (Italy); Celegato, Federica [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Wang, Qiang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 110004 Shenyang (China); Tiberto, Paola [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Chopart, Jean-Paul [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France)

2014-12-15

Magnetic films and multilayers are the focus of much attention motivated mainly by their wide range of applications, such as magnetic data storage devices and sensors. The magnetic multilayer structures are normally prepared through physical means of deposition, as molecular beam epitaxy (MBE) or sputtering. However, there are already examples of materials produced by electrochemical routes, which share with the other deposition techniques a high sensitivity of magnetic and transport properties of the samples on their crystallographic and chemical structure. In addition, electrochemical deposition allows growing structures with high aspect ratio, which are not possible to obtain by MBE deposition followed by lithographic processes. The present work investigates the Co/Ni bilayered nanocrystalline films produced through the temperature-elevated electrochemical deposition, and modified by annealing carried out also under an external magnetic field. The results indicate an increase of the coercive field of deposited Co/Ni bilayers, when the electrodeposition process was conducted under magnetic field of 1 T. The annealing processing caused further remarkable increase of the coercive field of as-prepared bilayers that has been preserved under magnetic annealing conditions. The magnetic properties are discussed in terms of samples microstructure. In as-prepared samples the in-plane magnetization was observed, while high temperature treatment, causing microstructural changes in the film, resulted also in appearance of a small component of magnetization oriented perpendicularly to the films’ plane that could have been observed by MFM analysis. The induced perpendicular magnetization component in the post-annealed samples was a result of the magnetic field applied in the perpendicular direction to the samples’ surface during annealing treatment. - Highlights: • Co deposits were obtained at high electrolyte temperature under applied B-field. • The

Magnetic properties dependence on the coupled effects of magnetic fields on the microstructure of as-deposited and post-annealed Co/Ni bilayer thin films

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Coïsson, Marco; Li, Donggang; Barrera, Gabriele; Celegato, Federica; Wang, Qiang; Tiberto, Paola; Chopart, Jean-Paul

2014-01-01

Magnetic films and multilayers are the focus of much attention motivated mainly by their wide range of applications, such as magnetic data storage devices and sensors. The magnetic multilayer structures are normally prepared through physical means of deposition, as molecular beam epitaxy (MBE) or sputtering. However, there are already examples of materials produced by electrochemical routes, which share with the other deposition techniques a high sensitivity of magnetic and transport properties of the samples on their crystallographic and chemical structure. In addition, electrochemical deposition allows growing structures with high aspect ratio, which are not possible to obtain by MBE deposition followed by lithographic processes. The present work investigates the Co/Ni bilayered nanocrystalline films produced through the temperature-elevated electrochemical deposition, and modified by annealing carried out also under an external magnetic field. The results indicate an increase of the coercive field of deposited Co/Ni bilayers, when the electrodeposition process was conducted under magnetic field of 1 T. The annealing processing caused further remarkable increase of the coercive field of as-prepared bilayers that has been preserved under magnetic annealing conditions. The magnetic properties are discussed in terms of samples microstructure. In as-prepared samples the in-plane magnetization was observed, while high temperature treatment, causing microstructural changes in the film, resulted also in appearance of a small component of magnetization oriented perpendicularly to the films’ plane that could have been observed by MFM analysis. The induced perpendicular magnetization component in the post-annealed samples was a result of the magnetic field applied in the perpendicular direction to the samples’ surface during annealing treatment. - Highlights: • Co deposits were obtained at high electrolyte temperature under applied B-field. • The

T=0 phase diagram and nature of domains in ultrathin ferromagnetic films with perpendicular anisotropy

International Nuclear Information System (INIS)

Pighin, Santiago A.; Billoni, Orlando V.; Stariolo, Daniel A.; Cannas, Sergio A.

2010-01-01

We present the complete zero temperature phase diagram of a model for ultrathin films with perpendicular anisotropy. The whole parameter space of relevant coupling constants is studied in first order anisotropy approximation. Because the ground state is known to be formed by perpendicular stripes separated by Bloch walls, a standard variational approach is used, complemented with specially designed Monte Carlo simulations. We can distinguish four regimes according to the different nature of striped domains: a high anisotropy Ising regime with sharp domain walls, a saturated stripe regime with thicker walls inside which an in-plane component of the magnetization develops, a narrow canted-like regime, characterized by a sinusoidal variation of both the in-plane and the out of plane magnetization components, which upon further decrease of the anisotropy leads to an in-plane ferromagnetic state via a spin reorientation transition (SRT). The nature of domains and walls are described in some detail together with the variation of domain width with anisotropy, for any value of exchange and dipolar interactions. Our results, although strictly valid at T=0, can be valuable for interpreting data on the evolution of domain width at finite temperature, a still largely open problem.

Fragmentation of a Filamentary Cloud Permeated by a Perpendicular Magnetic Field

Energy Technology Data Exchange (ETDEWEB)

Hanawa, Tomoyuki [Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba, Chiba 263-8522 (Japan); Kudoh, Takahiro [Faculty of Education, Nagasaki University, 1-14 Bonkyo-machi, Nagasaki, Nagasaki 852-8521 (Japan); Tomisaka, Kohji [Division of Theoretical Astronomy, National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan)

2017-10-10

We examine the linear stability of an isothermal filamentary cloud permeated by a perpendicular magnetic field. Our model cloud is assumed to be supported by gas pressure against self-gravity in the unperturbed state. For simplicity, the density distribution is assumed to be symmetric around the axis. Also for simplicity, the initial magnetic field is assumed to be uniform, and turbulence is not taken into account. The perturbation equation is formulated to be an eigenvalue problem. The growth rate is obtained as a function of the wavenumber for fragmentation along the axis and the magnetic field strength. The growth rate depends critically on the outer boundary. If the displacement vanishes in regions very far from the cloud axis (fixed boundary), cloud fragmentation is suppressed by a moderate magnetic field, which means the plasma beta is below 1.67 on the cloud axis. If the displacement is constant along the magnetic field in regions very far from the cloud, the cloud is unstable even when the magnetic field is infinitely strong. The cloud is deformed by circulation in the plane perpendicular to the magnetic field. The unstable mode is not likely to induce dynamical collapse, since it is excited even when the whole cloud is magnetically subcritical. For both boundary conditions, the magnetic field increases the wavelength of the most unstable mode. We find that the magnetic force suppresses compression perpendicular to the magnetic field especially in regions of low density.

Manipulating magnetic anisotropy of the ultrathin Co{sub 2}FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

Energy Technology Data Exchange (ETDEWEB)

Wen, F.S., E-mail: wenfsh03@126.com [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Xiang, J.Y.; Hao, C.X.; Zhang, F.; Lv, Y.F. [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Wang, W.H. [Institute of Physics, Chinese Academy of Science, Beijing 100080 (China); Hu, W.T.; Liu, Z.Y. [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

2013-12-15

The ultrathin films of Co{sub 2}FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films. - Highlights: • Different Pt orientations lead to different magnetic anisotropy for sandwiched ultrathin CFA films. • The Pt (111) orientation favors the perpendicular anisotropy for CFA layer. • Temperature and thickness-induced spin reorientation transitions were investigated in sandwiched ultrathin CFA films. • 0.8 nm CFA film is good candidate as electrode in magnetic tunnel junctions.

Enhancement of perpendicular magnetic anisotropy and anomalous hall effect in Co/Ni multilayers

Energy Technology Data Exchange (ETDEWEB)

Liu, Yiwei; Zhang, Jingyan, E-mail: jyzhang@ustb.edu.cn; Jiang, Shaolong; Liu, Qianqian; Li, Xujing; Yu, Guanghua, E-mail: ghyu@mater.ustb.edu.cn

2016-12-15

The perpendicular magnetic anisotropy (PMA) and the anomalous Hall effect (AHE) in Co/Ni multilayer were optimized by manipulating its interface structure (inducing HfO{sub 2} capping layer and Pt insertion) and post-annealing treatment. A strong PMA can be obtained in Co/Ni multilayers with HfO{sub 2} capping layer even after annealing at 400 °C. The heavy metal Hf may improve the interfacial spin-orbit coupling, which responsible for the enhanced PMA and high annealing stability. Moreover, the multilayer containing HfO{sub 2} capping layer also exhibited high saturation anomalous Hall resistivity through post-annealing, which is 0.85 μΩ cm after annealing at 375 °C, 211% larger than in the sample at deposited state which is only 0.27 μΩ cm. The enhancement of AHE is mainly attributed to the interface scattering through post-annealing treatment. - Highlights: • The perpendicular magnetic anisotropy and anomalous Hall effect of Co/Ni multilayer films were studied. • The PMA thermal stability of the Co/Ni ML can be enhanced by HfO{sub 2} capping layer and Pt insertion. • The anomalous Hall resistivity of Co/Ni ML covered by HfO{sub 2} was enhanced by post-annealing treatment.

Recording performances in perpendicular magnetic patterned media

International Nuclear Information System (INIS)

Asbahi, M; Moritz, J; Dieny, B; Gourgon, C; Perret, C; Van de Veerdonk, R J M

2010-01-01

We report on the recording performances and signal-to-noise ratio (SNR) analyses of perpendicular magnetic bit-patterned media. Two different types of magnetic samples are investigated. They differ by the way that they were patterned (nano-imprint versus e-beam lithography) as well as their magnetic properties (Co/Pt multilayers and CoCrPt alloy are the recording layers).Using a contact read/write quasi-static tester, we were able to characterize the write windows, the bit error rates and measure the SNR. The influence of magnetic properties and media microstructure on the writing processes is studied. We show also that the lithographical method used to replicate the media induces more or less noise due to structural distributions.

Symmetry mismatch-driven perpendicular magnetic anisotropy for perovskite/brownmillerite heterostructures.

Science.gov (United States)

Zhang, Jing; Zhong, Zhicheng; Guan, Xiangxiang; Shen, Xi; Zhang, Jine; Han, Furong; Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Qinghua; Gu, Lin; Hu, Fengxia; Yu, Richeng; Shen, Baogen; Sun, Jirong

2018-05-15

Grouping different transition metal oxides together by interface engineering is an important route toward emergent phenomenon. While most of the previous works focused on the interface effects in perovskite/perovskite heterostructures, here we reported on a symmetry mismatch-driven spin reorientation toward perpendicular magnetic anisotropy in perovskite/brownmillerite heterostructures, which is scarcely seen in tensile perovskite/perovskite heterostructures. We show that alternately stacking perovskite La 2/3 Sr 1/3 MnO 3 and brownmillerite LaCoO 2.5 causes a strong interface reconstruction due to symmetry discontinuity at interface: neighboring MnO 6 octahedra and CoO 4 tetrahedra at the perovskite/brownmillerite interface cooperatively relax in a manner that is unavailable for perovskite/perovskite interface, leading to distinct orbital reconstructions and thus the perpendicular magnetic anisotropy. Moreover, the perpendicular magnetic anisotropy is robust, with an anisotropy constant two orders of magnitude greater than the in-plane anisotropy of the perovskite/perovskite interface. The present work demonstrates the great potential of symmetry engineering in designing artificial materials on demand.

Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

KAUST Repository

Tu, Kun-Hua

2018-04-10

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

High current densities in superconducting films from magnetization

International Nuclear Information System (INIS)

McGuire, T.R.; Gupta, A.; Koren, G.; Gross, R.

1990-01-01

Epitaxial thin films of YBa 2 Cu 3 O 7-x made by laser ablation have the CuO planes parallel to the film surface. In the CuO planes critical currents of J C ∼40 x 10 6 amps/cm 2 are found at 5K in zero field. Multi-layered films with Gd replacing Y each .01μm in thickness have J C nearly 140 x 10 6 amps/cm 2 . This higher value is perhaps due to additional point defects. Perpendicular to the CuO planes magnetization studies indicate strong pinning effects attributed to the CuO planes acting as barriers to flux motion

Magnetic anisotropy in iron thin films evaporated under ultra-high vacuum

International Nuclear Information System (INIS)

Dinhut, J.F.; Eymery, J.P.; Krishnan, R.

1992-01-01

α-iron thin films with thickness ranging between 20 and 1500 nm have been evaporated using an electron gun under ultra-high vacuum conditions (5.10 -7 P). The columnar structure observed in cross-sectional TEM is related to the large surface diffusion. From Moessbauer spectra the spin orientation is deduced and found to be influenced by the column axis. Spins can be obtained perpendicularly to the film plane by rotating the substrte during the deposition. The magnetization of the samples is reduced by about 30% and the reduction attributed to the interstitial space which increases with the incident angle. The substrate rotation also decreases Ku( parallel ) by a factor 2 and increases Ku( perpendicular to ). (orig.)

Gyrokinetic theory of perpendicular cyclotron resonance in a nonuniformly magnetized plasma

International Nuclear Information System (INIS)

Lashmore-Davies, C.N.; Dendy, R.O.

1989-01-01

The extension of gyrokinetic theory to arbitrary frequencies by Chen and Tsai [Phys. Fluids 26, 141 (1983); Plasma Phys. 25, 349 (1983)] is used to study cyclotron absorption in a straight magnetic field with a perpendicular, linear gradient in strength. The analysis includes the effects of magnetic field variation across the Larmor orbit and is restricted to propagation perpendicular to the field. It yields the following results for propagation into the field gradient. The standard optical depths for the fundamental O-mode and second harmonic X-mode resonances are obtained from the absorption profiles given in this paper, without invoking relativistic mass variation [see also Antonsen and Manheimer, Phys. Fluids 21, 2295 (1978)]. The compressional Alfven wave is shown to undergo perpendicular cyclotron damping at the fundamental minority resonance in a two-ion species plasma and at second harmonic resonance in a single-ion species plasma. Ion Bernstein waves propagating into the second harmonic resonance are no longer unattenuated, but are increasingly damped as they approach the resonance. It is shown how the kinetic power flow affects absorption profiles, yielding information previously obtainable only from full-wave theory. In all cases, the perpendicular cyclotron damping arises from the inclusion of magnetic field variation across the Larmor orbit

Microstructure and Magnetic Properties of NdFeB Films through Nd Surface Diffusion Process

Directory of Open Access Journals (Sweden)

Wenfeng Liu

2017-01-01

Full Text Available Ta/Nd/NdFeB/Nd/Ta films were deposited by magnetron sputtering on Si (100 substrates and subsequently annealed for 30 min at 923 K in vacuum. It was found that the microstructure and magnetic properties of Ta/Nd/NdFeB/Nd/Ta films strongly depend on the NdFeB layer thickness. With NdFeB layer thickness increasing, both the grain size and the strain firstly reduce and then increase. When NdFeB layer thickness is 750 nm, the strain reaches the minimum value. Meanwhile, both the in-plane and perpendicular coercivities firstly drastically increase and then slowly decrease with NdFeB layer thickness increasing. The highest in-plane and perpendicular coercivities can be obtained at NdFeB layer thickness of 750 nm, which are 21.2 kOe and 19.5 kOe, respectively. In addition, the high remanence ratio (remanent magnetization/saturation magnetization of 0.87 can also be achieved in Ta/Nd/NdFeB (750 nm/Nd/Ta film.

Investigation of the magnetic properties of electrodeposited NiFe thin films

International Nuclear Information System (INIS)

Bakkaloglu, O. F.; Bedir, M.; Oeztas, M.; Karahan, I. H.

2002-01-01

Most magnetic devices used today are based on the magnetic thin film. Rapid and extensive developments in magnetic sensor / actuator and magnetic recording technology place a growing demand on the use of different thin film fabrication techniques for magnetic materials. The electroplating technique is especially interesting due to its low cost, high throughput and high quality of the deposits which are extensively used in the magnetic recording industry to deposit relatively thick permalloy layers. Much recent attention has focused on the electrodeposited NiFe thin films, which exhibit giant magneto resistive behaviour as well as anisotropic magnetoresistance properties. n this study, NiFe thin films were developed by using electrodeposition technique and their crystallinity structures were investigated by using x-ray diffractometer measurements. The magneto resistive properties of the samples were investigated by Wan der Pauw method with a home made electromagnet under the different magnetic fields. The magnetoresistance measurements of the samples were carried out in two configurations; current parallel ( longitudinal ) and perpendicular ( transverse ) to the magnetic field. In the longitudinal configuration giant magnetoresistance was observed while anisotropic magnetoresistance was detected in the other configuration

Influence of the interface on the magnetic properties of NiZn ferrite thin films treated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Jiang, X.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Guo, D.W. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H., E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fan, X.L.; Chai, G.Z. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xue, D.S., E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2015-09-01

In order to systematically investigate the influence of the interface on the magnetic properties, polycrystalline NiZn ferrite thin films were irradiated with 60 keV proton in the dose range from 5 × 10{sup 12} to 5 × 10{sup 16} ions/cm{sup 2}. A non-destructive approach by proton irradiation was found to finely adjust the magnetic properties of polycrystalline NiZn ferrite thin films such as coercivity, perpendicular magnetic anisotropy as well as the effective g value. The coercivity is about 725 Oe for high proton dose ferrite, which is twice larger than the unirradiated one. The ferromagnetic resonance measurements indicated that perpendicular magnetic anisotropy and the effective g value increase with the irradiation dose. Our finding indicates that all modifications of these magnetic properties were associated with the change of interface due to the diffusion and the stress induced by proton irradiation. The change of the effective g value is a result of lattice expansion and the decrease of the magnetic dipole interaction between the columnar grains. This work provides a feasible way to tailor the magnetic properties of thin films by ion irradiation and promotes investigations for the stability of magnetic thin film devices in space or unclear radiation environments.

Anisotropic behaviour of transmission through thin superconducting NbN film in parallel magnetic field

Energy Technology Data Exchange (ETDEWEB)

Šindler, M., E-mail: sindler@fzu.cz [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Tesař, R. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic); Koláček, J. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Skrbek, L. [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic)

2017-02-15

Highlights: • Transmission through thin NbN film in parallel magnetic field exhibits strong anisotropic behaviour in the terahertz range. • Response for a polarisation parallel with the applied field is given as weighted sum of superconducting and normal state contributions. • Effective medium approach fails to describe response for linear polarisation perpendicular to the applied magnetic field. - Abstract: Transmission of terahertz waves through a thin layer of the superconductor NbN deposited on an anisotropic R-cut sapphire substrate is studied as a function of temperature in a magnetic field oriented parallel with the sample. A significant difference is found between transmitted intensities of beams linearly polarised parallel with and perpendicular to the direction of applied magnetic field.

PLD growth of CoPd thin films and characterization of their magnetic properties by magneto optical Kerr effect

Science.gov (United States)

Sedrpooshan, Mehran; Ahmadvand, Hossein; Ranjbar, Mehdi; Salamati, Hadi

2018-06-01

CoPd alloy thin films with different thicknesses and Co/Pd ratios have been deposited on Si (100) substrate by pulsed laser deposition (PLD). The magnetic properties were investigated by using the magneto-optical Kerr effect (MOKE) in both longitudinal and polar geometries. The results show that the films with thickness in the range of 6-24 nm, deposited at a low substrate temperature of 200 °C, are mostly magnetized in the plane of film. Higher deposition temperature forces the magnetic easy axis to orient in the perpendicular direction of the films.

The role of magnetic loops in particle acceleration at nearly perpendicular shocks

Science.gov (United States)

Decker, R. B.

1993-01-01

The acceleration of superthermal ions is investigated when a planar shock that is on average nearly perpendicular propagates through a plasma in which the magnetic field is the superposition of a constant uniform component plus a random field of transverse hydromagnetic fluctuations. The importance of the broadband nature of the transverse magnetic fluctuations in mediating ion acceleration at nearly perpendicular shocks is pointed out. Specifically, the fluctuations are composed of short-wavelength components which scatter ions in pitch angle and long-wavelength components which are responsible for a spatial meandering of field lines about the mean field. At nearly perpendicular shocks the field line meandering produces a distribution of transient loops along the shock. As an application of this model, the acceleration of a superthermal monoenergetic population of seed protons at a perpendicular shock is investigated by integrating along the exact phase-space orbits.

Channel modeling, signal processing and coding for perpendicular magnetic recording

Science.gov (United States)

Wu, Zheng

With the increasing areal density in magnetic recording systems, perpendicular recording has replaced longitudinal recording to overcome the superparamagnetic limit. Studies on perpendicular recording channels including aspects of channel modeling, signal processing and coding techniques are presented in this dissertation. To optimize a high density perpendicular magnetic recording system, one needs to know the tradeoffs between various components of the system including the read/write transducers, the magnetic medium, and the read channel. We extend the work by Chaichanavong on the parameter optimization for systems via design curves. Different signal processing and coding techniques are studied. Information-theoretic tools are utilized to determine the acceptable region for the channel parameters when optimal detection and linear coding techniques are used. Our results show that a considerable gain can be achieved by the optimal detection and coding techniques. The read-write process in perpendicular magnetic recording channels includes a number of nonlinear effects. Nonlinear transition shift (NLTS) is one of them. The signal distortion induced by NLTS can be reduced by write precompensation during data recording. We numerically evaluate the effect of NLTS on the read-back signal and examine the effectiveness of several write precompensation schemes in combating NLTS in a channel characterized by both transition jitter noise and additive white Gaussian electronics noise. We also present an analytical method to estimate the bit-error-rate and use it to help determine the optimal write precompensation values in multi-level precompensation schemes. We propose a mean-adjusted pattern-dependent noise predictive (PDNP) detection algorithm for use on the channel with NLTS. We show that this detector can offer significant improvements in bit-error-rate (BER) compared to conventional Viterbi and PDNP detectors. Moreover, the system performance can be further improved by

Perpendicular magnetic anisotropy in granular multilayers of CoPd alloyed nanoparticles

Science.gov (United States)

Vivas, L. G.; Rubín, J.; Figueroa, A. I.; Bartolomé, F.; García, L. M.; Deranlot, C.; Petroff, F.; Ruiz, L.; González-Calbet, J. M.; Pascarelli, S.; Brookes, N. B.; Wilhelm, F.; Chorro, M.; Rogalev, A.; Bartolomé, J.

2016-05-01

Co-Pd multilayers obtained by Pd capping of pre-deposited Co nanoparticles on amorphous alumina are systematically studied by means of high-resolution transmission electron microscopy, x-ray diffraction, extended x-ray absorption fine structure, SQUID-based magnetometry, and x-ray magnetic circular dichroism. The films are formed by CoPd alloyed nanoparticles self-organized across the layers, with the interspace between the nanoparticles filled by the non-alloyed Pd metal. The nanoparticles show atomic arrangements compatible with short-range chemical order of L 10 strucure type. The collective magnetic behavior is that of ferromagnetically coupled particles with perpendicular magnetic anisotropy, irrespective of the amount of deposited Pd. For increasing temperature three magnetic phases are identified: hard ferromagnetic with strong coercive field, soft-ferromagnetic as in an amorphous asperomagnet, and superparamagnetic. Increasing the amount of Pd in the system leads to both magnetic hardness increment and higher transition temperatures. Magnetic total moments of 1.77(4) μB and 0.45(4) μB are found at Co and Pd sites, respectively, where the orbital moment of Co, 0.40(2) μB, is high, while that of Pd is negligible. The effective magnetic anisotropy is the largest in the capping metal series (Pd, Pt, W, Cu, Ag, Au), which is attributed to the interparticle interaction between de nanoparticles, in addition to the intraparticle anisotropy arising from hybridization between the 3 d -4 d bands associated to the Co and Pd chemical arrangement in a L 10 structure type.

Magnetization curves for thin films of layered type-II superconductors, Kolmogorov-Arnold-Moser theory, and the devil's staircase

International Nuclear Information System (INIS)

Burkov, S.E.

1991-01-01

Magnetization curves for a thin-layered superconducting film in parallel magnetic field have been shown to become devil's staircases provided the superconducting layers are perpendicular to the film plane. The transition from an incomplete to a complete devil's staircase with decreasing temperature is predicted. A chain of vortices is described by the generalized Frenkel-Kontorova model

Enhancement of L10 ordering with the c-axis perpendicular to the substrate in FePt alloy film by using an epitaxial cap-layer

Directory of Open Access Journals (Sweden)

Mitsuru Ohtake

2017-05-01

Full Text Available FePt alloy thin films with cap-layers of MgO or C are prepared on MgO(001 single-crystal substrates by using a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The FePt film thickness is fixed at 10 nm, whereas the cap-layer thickness is varied from 1 to 10 nm. The influences of cap-layer material and cap-layer thickness on the variant structure and the L10 ordering are investigated. Single-crystal FePt(001 films with disordered fcc structure (A1 grow epitaxially on the substrates at 200 °C. Single-crystal MgO(001 cap-layers grow epitaxially on the FePt films, whereas the structure of C cap-layers is amorphous. The phase transformation from A1 to L10 occurs when the films are annealed at 600 °C. The FePt films with MgO cap-layers thicker than 2 nm consist of L10(001 variant with the c-axis perpendicular to the substrate surface, whereas those with C cap-layers involve small volumes of L10(100 and (010 variants with the c-axis lying in the film plane. The in-plane and the out-of-plane lattices are respectively more expanded and contracted in the continuous-lattice MgO/FePt/MgO structure due to accommodations of misfits of FePt film with respect to not only the MgO substrate but also the MgO cap-layer. The lattice deformation promotes phase transformation along the perpendicular direction and L10 ordering. The FePt films consisting of only L10(001 variant show strong perpendicular magnetic anisotropies and low in-plane coercivities. The present study shows that an introduction of epitaxial cap-layer is effective in controlling the c-axis perpendicular to the substrate surface.

Optical and magnetic properties of a transparent garnet film for atomic physics experiments

Directory of Open Access Journals (Sweden)

Mari Saito

2016-12-01

Full Text Available We investigated the optical and magnetic properties of a transparent magnetic garnet with a particular focus on its applications to atomic physics experiments. The garnet film used in this study was a magnetically soft material that was originally designed for a Faraday rotator at optical communication wavelengths in the near infrared region. The film had a thickness of 2.1 μm and a small optical loss at a wavelength of λ=780 nm resonant with Rb atoms. The Faraday effect was also small and, thus, barely affected the polarization of light at λ=780 nm. In contrast, large Faraday rotation angles at shorter wavelengths enabled us to visualize magnetic domains, which were perpendicularly magnetized in alternate directions with a period of 3.6 μm. We confirmed the generation of an evanescent wave on the garnet film, which can be used for the optical observation and manipulation of atoms on the surface of the film. Finally, we demonstrated a magnetic mirror for laser-cooled Rb atoms using the garnet film.

Methods for characterizing magnetic footprints of perpendicular magnetic recording writer heads

Energy Technology Data Exchange (ETDEWEB)

Li, Shaoping, E-mail: shaoping.li@wdc.com; Lin, Ed; George, Zach; Terrill, Dave; Mendez, H.; Santucci, J.; Yie, Derek [Western Digital Corp., 44100 Osgood Road, Fremont, California 94539 (United States)

2014-05-07

In this work, the magnetic footprints, along with some of its dynamic features in recording process, of perpendicular magnetic recording writer heads have been characterized by using three different techniques. Those techniques are the spin-stand stationary footprint technique, the spin-stand dynamic footprint technique, and the coherent writing technique combined with magnetic force microscope imaging method. The characteristics of those techniques have been compared to one another. It was found experimentally that the spin-stand stationary method could not precisely catch some peculiar recording dynamics of the write heads in certain conditions. The advantages and disadvantages among all those techniques are also examined and discussed in detail.

Methods for characterizing magnetic footprints of perpendicular magnetic recording writer heads

International Nuclear Information System (INIS)

Li, Shaoping; Lin, Ed; George, Zach; Terrill, Dave; Mendez, H.; Santucci, J.; Yie, Derek

2014-01-01

In this work, the magnetic footprints, along with some of its dynamic features in recording process, of perpendicular magnetic recording writer heads have been characterized by using three different techniques. Those techniques are the spin-stand stationary footprint technique, the spin-stand dynamic footprint technique, and the coherent writing technique combined with magnetic force microscope imaging method. The characteristics of those techniques have been compared to one another. It was found experimentally that the spin-stand stationary method could not precisely catch some peculiar recording dynamics of the write heads in certain conditions. The advantages and disadvantages among all those techniques are also examined and discussed in detail

Methods for characterizing magnetic footprints of perpendicular magnetic recording writer heads

Science.gov (United States)

Li, Shaoping; Lin, Ed; George, Zach; Terrill, Dave; Mendez, H.; Santucci, J.; Yie, Derek

2014-01-01

In this work, the magnetic footprints, along with some of its dynamic features in recording process, of perpendicular magnetic recording writer heads have been characterized by using three different techniques. Those techniques are the spin-stand stationary footprint technique, the spin-stand dynamic footprint technique, and the coherent writing technique combined with magnetic force microscope imaging method. The characteristics of those techniques have been compared to one another. It was found experimentally that the spin-stand stationary method could not precisely catch some peculiar recording dynamics of the write heads in certain conditions. The advantages and disadvantages among all those techniques are also examined and discussed in detail. PMID:24753633

Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

International Nuclear Information System (INIS)

Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

2015-01-01

The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

3D and 1D calculation of hysteresis loops and energy products for anisotropic nanocomposite films with perpendicular anisotropy

International Nuclear Information System (INIS)

Yuan, X.H.; Zhao, G.P.; Yue, Ming; Ye, L.N.; Xia, J.; Zhang, X.C.; Chang, J.

2013-01-01

In this paper, the magnetic reversal process, hysteresis loops and energy products for exchange-coupled Nd 2 Fe 14 B/α-Fe bilayers are studied systematically by a three-dimensional (3D) model. The 3D calculations are numerically solved using the finite difference method, where the results are carefully compared with those calculated by one-dimensional (1D) model. It is found that the calculated hysteresis loops and energy products based on the two methods are consistent with each other. Both nucleation fields and coercivities decrease monotonically as the soft layer thickness L s increases. In addition, the calculated spatial distributions of magnetization orientations in the thickness direction at various applied fields based on both methods signify a three-step magnetic reversal process, which are nucleation, growth and displacement of the domain wall. The calculated magnetic orientations within the film plane, however, are totally different according to the two methods. The 3D calculation exhibits a process of vortex formation and annihilation. On the other hand, the 1D calculation gives a quasi-coherent one, where magnetization orientation is coherent in the film plane and varies in the thickness direction. This new reversal mechanism displayed in the film plane has a systematic influence on the nucleation fields, coercivity and energy products. - Highlights: • Consistent hysteresis loops and energy products for 3D and 1D calculation. • Domain wall formation, evolution and displacement perpendicular to the film plane. • Vortex formation, annihilation and better loop squareness in 3D calculation. • Larger nucleation fields, remanence and smaller coercivity in 3D calculation

Highly tunable perpendicularly magnetized synthetic antiferromagnets for biotechnology applications

OpenAIRE

Vemulkar, T; Mansell, Rhodri; Petit, Dorothee Celine; Cowburn, Russell Paul; Lesniak, MS

2015-01-01

Magnetic micro and nanoparticles are increasingly used in biotechnological applications due to the ability to control their behavior through an externally applied field. We demonstrate the fabrication of particles made from ultrathin perpendicularly magnetized CoFeB/Pt layers with antiferromagnetic interlayer coupling. The particles are characterized by zero moment at remanence, low susceptibility at low fields, and a large saturated moment created by the stacking of the basic coupled bilayer...

Magnetic properties, domain-wall creep motion, and the Dzyaloshinskii-Moriya interaction in Pt/Co/Ir thin films

Science.gov (United States)

Shepley, Philippa M.; Tunnicliffe, Harry; Shahbazi, Kowsar; Burnell, Gavin; Moore, Thomas A.

2018-04-01

We study the magnetic properties of perpendicularly magnetized Pt/Co/Ir thin films and investigate the domain-wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultrathin films. Measurements of the Co layer thickness dependence of saturation magnetization, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e., DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain-wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain-wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter α , we find that both α and the velocity scaling parameter v0 change as a function of in-plane bias field.

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

International Nuclear Information System (INIS)

Czapkiewicz, M.; Stobiecki, T.; Rak, R.; Zoladz, M.; Dijken, S. van

2007-01-01

The magnetization reversal process in perpendicularly biased [Pt/Co] 3 /d Pt Pt/IrMn and in-plane biased Co/d Pt Pt/IrMn multilayers with 0nm= Pt = Pt =0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers

Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

Science.gov (United States)

Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

2016-07-01

A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

Energy Technology Data Exchange (ETDEWEB)

Maryško, M., E-mail: marysko@fzu.cz; Hejtmánek, J.; Laguta, V. [Institute of Physics of ASCR v.v.i., Cukrovarnická 10, 162 00 Prague 6 (Czech Republic); Sofer, Z.; Sedmidubský, D.; Šimek, P.; Veselý, M. [Department of Inorganic Chemistry, Institute of Chemical Technology, 166 28 Prague 6 (Czech Republic); Mikulics, M. [Peter Grünberg Institut, PGI-9, Forschung Centrum, Jülich D-52425 (Germany); JARA, Fundamentals of Future Information Technology, D52425 Jülich (Germany); Buchal, C. [Peter Grünberg Institut, PGI-9, Forschung Centrum, Jülich D-52425 (Germany); Macková, A.; Malínský, P. [Nuclear Physics Institute of the ASCR v.v.i., 250 68 Řež (Czech Republic); Department of Physics, Faculty of Science, J.E.Purkinje University, České mládeže, 400 96 Ústí nad Labem (Czech Republic); Wilhelm, R. A. [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany)

2015-05-07

The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb{sup 3+}, Tm{sup 3+}, Sm{sup 3+}, and Ho{sup 3+} ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr{sup 3+} and Fe{sup 3+} impurities. The samples 5 × 5 mm{sup 2} were positioned in the classical straws and within an estimated accuracy of 10{sup −6 }emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb{sup 3+} ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

International Nuclear Information System (INIS)

Martin-Gonzalez, M.S.; Briones, F.; Garcia-Martin, J.M.; Montserrat, J.; Vila, L.; Faini, G.; Testa, A.M.; Fiorani, D.; Rohrmann, H.

2010-01-01

Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities.

Study of obliquely deposited thin cobalt films

International Nuclear Information System (INIS)

Szmaja, W.; Kozlowski, W.; Balcerski, J.; Kowalczyk, P.J.; Grobelny, J.; Cichomski, M.

2010-01-01

Research highlights: → The paper reports simultaneously on the magnetic domain structure of obliquely deposited thin cobalt films (40 nm and 100 nm thick) and their morphological structure. Such studies are in fact rare (Refs. cited in the paper). → Moreover, to our knowledge, observations of the morphological structure of these films have not yet been carried out simultaneously by transmission electron microscopy (TEM) and atomic force microscopy (AFM). → The films of both thicknesses were found to have uniaxial in-plane magnetic anisotropy. → The magnetic microstructure of the films 40 nm thick was composed of domains running and magnetized predominantly in the direction perpendicular to the incidence plane of the vapor beam. → As the film thickness was changed from 40 nm to 100 nm, the magnetic anisotropy was observed to change from the direction perpendicular to parallel with respect to the incidence plane. → Thanks to the application of TEM and AFM, complementary information on the morphological structure of the films could be obtained. → In comparison with TEM images, AFM images revealed grains larger in size and slightly elongated in the direction perpendicular rather than parallel to the incidence plane. → These experimental findings clearly show that surface diffusion plays an important role in the process of film growth. → For the films 40 nm thick, the alignment of columnar grains in the direction perpendicular to the incidence plane was observed. → This correlates well with the magnetic domain structure of these films. → For the films 100 nm thick, the perpendicular alignment of columnar grains could also be found, although in fact with larger difficulty. → TEM studies showed that the films consisted mainly of the hexagonal close-packed (HCP) crystalline structure, but no preferred crystallographic orientation of the grains could be detected for the films of both thicknesses. → For the films 100 nm thick, the alignment of

Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

2015-01-01

The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

Perpendicular magnetic anisotropy of amorphous ferromagnetic CoSiB/[Pt,Au] multilayer

International Nuclear Information System (INIS)

Jeong, S.; Yim, H. I.

2012-01-01

Perpendicular magnetic anisotropy is being widely studied as a possible candidate for a high density spin-transfer torque magnetic random access memory. The key issues of a high-density spin-transfer torque magnetic random access memory are decreasing the switching current and the high thermal stability. In order to solve these problems, two approaches are suggested: One is the development a new amorphous ferromagnetic material as a pinned layer for a multilayer with a low saturated magnetization (M s ) value because of the interface roughness between the two layers. The other is a search for the most suitable materials with high perpendicular magnetic anisotropy in order to have high thermal stability. In this work, we present an amorphous ferromagnetic Co 75 Si 15 B 10 material and compare the magnetic properties of a [CoSiB (0.3, 0.4, 0.5 nm)/Pt (1.4 nm)] 5 multilayer and new combinations [CoSiB (0.3, 0.4, 0.5 nm)/Au (1.5 nm)] 5 .

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

Energy Technology Data Exchange (ETDEWEB)

Czapkiewicz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland)]. E-mail: czapkiew@agh.edu.pl; Stobiecki, T. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Rak, R. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Zoladz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Dijken, S. van [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

2007-09-15

The magnetization reversal process in perpendicularly biased [Pt/Co]{sub 3}/d{sub Pt} Pt/IrMn and in-plane biased Co/d{sub Pt} Pt/IrMn multilayers with 0nm=magnetic anisotropy, the exchange bias field decreases monotonically with Pt insertion layer thickness, while its coercivity remains constant. The samples with perpendicular magnetic anisotropy, on the other hand, exhibit maximum exchange bias and minimum coercivity for d{sub Pt}=0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers.

Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates

Energy Technology Data Exchange (ETDEWEB)

Kozłowski, W., E-mail: wkozl@std2.phys.uni.lodz.pl [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Balcerski, J.; Szmaja, W. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Piwoński, I. [Department of Materials Technology and Chemistry, Faculty of Chemistry, University of Łódź, Pomorska 163, 90-236 Łódź (Poland); Batory, D. [Institute of Materials Science and Engineering, Łódź University of Technology, Stefanowskiego 1/15, 90-924 Łódź (Poland); Miękoś, E. [Department of Inorganic and Analytical Chemistry, Faculty of Chemistry, University of Łódź, Tamka 12, 91-403 Łódź (Poland); and others

2017-03-15

We have made a quantitative study of the morphological and magnetic domain structures of 100 nm thick nanocrystalline cobalt films thermally evaporated on naturally oxidized Si(100) substrates. The morphological structure is composed of densely packed grains with the average grain size (35.6±0.8) nm. The grains exhibit no geometric alignment and no preferred elongation on the film surface. In the direction perpendicular to the film surface, the grains are aligned in columns. The films crystallize mainly in the hexagonal close-packed phase of cobalt and possess a crystallographic texture with the hexagonal axis perpendicular to the film surface. The magnetic domain structure consists of domains forming a maze stripe pattern with the average domain size (102±6) nm. The domains have their magnetizations oriented almost perpendicularly to the film surface. The domain wall energy, the domain wall thickness and the critical diameter for single-domain particle were determined. - Highlights: • 100 nm thick nanocrystalline cobalt films on Si(100) were studied quantitatively. • The grains are densely packed and possess the average size (35.6±0.8) nm. • The films have a texture with the hexagonal axis perpendicular to the film surface. • The magnetic domains form a maze stripe pattern with the average size (102±6) nm. • The domains are magnetized almost perpendicularly to the film surface.

Magnetic-field induced semimetal in topological crystalline insulator thin films

International Nuclear Information System (INIS)

Ezawa, Motohiko

2015-01-01

We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

Magnetic-field induced semimetal in topological crystalline insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

2015-06-19

We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

Magnetic properties of soft layer/FePt-MgO exchange coupled composite Perpendicular recording media

Institute of Scientific and Technical Information of China (English)

Yin Jin-Hua; Takao Suzuki; Pan Li-Qing

2008-01-01

The magnetic properties of exchange coupled composite(ECC)media that are composed of perpendicular magnetic recording media FePt-MgO and two kinds of soft layers have been studied by using an x-ray diffractometer,a polar Kerr magneto-optical system(PMOKE)and a vibrating sample magnetometer(VSM).The results show that ECC media can reduce the coercivities of perpendicular magnetic recording media FePt-MgO.The ECC media with granular-type soft layers have weaker exchange couplings between magnetic grains and the magnetization process,for ECC media of this kind mainly follow the Stoner-Wohlfarth model.

Novel Chiral Magnetic Domain Wall Structure in Fe/Ni/Cu(001) Films

Science.gov (United States)

Chen, G.; Zhu, J.; Quesada, A.; Li, J.; N'Diaye, A. T.; Huo, Y.; Ma, T. P.; Chen, Y.; Kwon, H. Y.; Won, C.; Qiu, Z. Q.; Schmid, A. K.; Wu, Y. Z.

2013-04-01

Using spin-polarized low energy electron microscopy, we discovered a new type of domain wall structure in perpendicularly magnetized Fe/Ni bilayers grown epitaxially on Cu(100). Specifically, we observed unexpected Néel-type walls with fixed chirality in the magnetic stripe phase. Furthermore, we find that the chirality of the domain walls is determined by the film growth order with the chirality being right handed in Fe/Ni bilayers and left handed in Ni/Fe bilayers, suggesting that the underlying mechanism is the Dzyaloshinskii-Moriya interaction at the film interfaces. Our observations may open a new route to control chiral spin structures using interfacial engineering in transition metal heterostructures.

In Situ TEM Scratch Testing of Perpendicular Magnetic Recording Multilayers with a Novel MEMS Tribometer

Science.gov (United States)

Hintsala, Eric D.; Stauffer, Douglas D.; Oh, Yunje; Asif, S. A. Syed

2017-01-01

Utilizing a newly developed two-dimensional (2D) transducer designed for in situ transmission electron microscope (TEM) nanotribology, deformation mechanisms of a perpendicular magnetic recording film stack under scratch loading conditions were evaluated. These types of films are widely utilized in storage devices, and loss of data by grain reorientation in the recording layers is of interest. The observed deformation was characterized by a stick-slip mechanism, which was induced by a critical ratio of lateral to normal force regardless of normal force. At low applied normal forces, the diamond-like carbon (DLC) coating and asperities in the recording layer were removed during scratching, while, at higher applied forces, grain reorientation and debonding of the recording layer was observed. As the normal force and displacement were increased, work for stick-slip deformation and contact stress were found to increase based upon an Archard's Law analysis. These experiments also served as an initial case study demonstrating the capabilities of this new transducer.

Tuning stress-induced magnetic anisotropy and high frequency properties of FeCo films deposited on different curvature substrates

International Nuclear Information System (INIS)

Wang, Z.K.; Feng, E.X.; Liu, Q.F.; Wang, J.B.; Xue, D.S.

2012-01-01

It is important to control magnetic anisotropy of ferromagnetic materials. In this work, FeCo thin films are deposited on the curving substrates by electrochemical deposition to adjust the stress-induced magnetic anisotropy. The compressive stress is produced in the as-deposited films after the substrates are flattened. A simplified theoretical model of ferromagnetic resonance is utilized to measure the intrinsic magnetic anisotropy field and saturation magnetization. The results show that the stress-induced magnetic anisotropy and the resonance frequency increase with the increase of substrate curvature. The induced easy axis is perpendicular to the compressive stress direction.

Effects of buffer layer temperature on the magnetic properties of NdFeB thin film magnets

International Nuclear Information System (INIS)

Kim, Y.B.; Cho, S.H.; Kim, H.T.; Ryu, K.S.; Lee, S.H.; Lee, K.H.; Kapustin, G.A.

2004-01-01

Effects of the buffer layer temperature (T b ) on the magnetic properties and microstructure of [Mo/NdFeB/Mo]-type thin films have been investigated. The Mo-buffer layer with low T b is composed of fine grains while that with high T b has coarse grains. The subsequent NdFeB layer also grows with fine or coarse grains following the buffer layer structure. The NdFeB layer grown on a low T b buffer shows high coercivity and strong perpendicular anisotropy. The best magnetic properties of i H c =1.01 MA/m (12.7 kOe), B r =1.31 T (13.1 kG) and BH max =329 kJ/m 3 (41.4 MGOe) were obtained from the film with T b =400 deg. C

Magnetization reversal in ultrashort magnetic field pulses

International Nuclear Information System (INIS)

Bauer, M.; Lopusnik, R.; Fassbender, J.; Hillebrands, B.

2000-01-01

We report the switching properties of a thin magnetic film subject to an ultrashort, laterally localized magnetic field pulse, obtained by numerical investigations. The magnetization distribution in the film is calculated on a grid assuming Stoner-like coherent rotation within the grid square size. Perpendicularly and in-plane magnetized films exhibit a magnetization reversal due to a 4 ps magnetic field pulse. Outside the central region the pulse duration is short compared to the precession period. In this area the evolution of the magnetization during the field pulse does not depend strongly on magnetic damping and/or pulse shape. However, the final magnetization distribution is affected by the magnetic damping. Although the pulse duration is short compared to the precession period, the time needed for the relaxation of the magnetization to the equilibrium state is rather large. The influence of the different magnetic anisotropy contributions and the magnetic damping parameter enters into the magnetization reversal process. Comparing the case of perpendicular anisotropy with different kinds of in-plane anisotropies, a principal difference is found due to the symmetry of the shape anisotropy with respect to the anisotropy in question

Induced superconductivity in Nb/InAs-hybrid structures in parallel and perpendicular magnetic fields

International Nuclear Information System (INIS)

Rohlfing, Franziska

2007-07-01

The thesis in hand investigates experimentally Josephson contacts based on Nb/InAs-hybrid structures. The experiments discussed here were done on samples of different width of the Josephson contacts (between 500 nm and 2000 nm). They were realized by means of different methods of the semiconductor technology. The length of the Josephson contacts was about 600 nm and, as superconducting material, niobium was used. Both critical current and characteristics in the resistive regime (excess-current and multiple Andreev reflection) are studied as a function of temperature and external magnetic fields. Measurements in perpendicular and parallel magnetic fields with respect to the plain of the two-dimensional electron gas, are presented. The Andreev reflection amplitude determining the supercurrent is calculated by means of the Greens functions of the two-dimensional electron gas beneath the superconductors which is modified by the proximity effect. From the fit to the data with this model, the transparency of the boundary between the superconductor and the two-dimensional electron gas can be estimated to be about 0.1. The transparency of the point contacts in the two-dimensional electrons gas can be determined independently from the Josephson junction width dependence of the normal resistance (T=10 K). This transparency amounts to about 0.8 in the examined samples. The measurements of the critical current in a magnetic field perpendicular to the two-dimensional electron gas show a Fraunhofer pattern. In order to study the transition from perpendicular orientation into parallel orientation, measurements of the critical current as a function of the magnetic field were done for different angles. In the resistive regime, the excess current measurements in the magnetic field show a very interesting behaviour: In parallel magnetic fields, the excess current becomes zero at about 2.5 T. In perpendicular magnetic field however, the excess current is strongly suppressed below 30 m

Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries

OpenAIRE

Yu, Guoqiang; Akyol, Mustafa; Upadhyaya, Pramey; Li, Xiang; He, Congli; Fan, Yabin; Montazeri, Mohammad; Alzate, Juan G.; Lang, Murong; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.

2016-01-01

Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied. Recently, it has been further demonstrated that the in-plane magnetic field can be eliminated by introducing a new type of perpendicular field-like SOT via incorporating a lateral structural a...

Structure and magnetic properties of L10-FePt thin films on TiN/RuAl underlayers

International Nuclear Information System (INIS)

Yang En; Ratanaphan, Sutatch; Zhu Jiangang; Laughlin, David E.

2011-01-01

Highly ordered L1 0 FePt-oxide thin films with small grains were prepared by using a RuAl layer as a grain size defining seed layer along with a TiN barrier layer. Different HAMR (Heat Assisted Magnetic Recording) favorable underlayers were studied to encourage perpendicular texture and preferred microstructure. It was found that the epitaxial and small grain growth from the RuAl/TiN underlayer results in small and uniform grains in the FePt layer with perpendicular texture. By introducing the grain size defining underlayers, the FePt grain size can be reduced from 30 to 6 nm with the same volume fraction (9%) of SiO 2 in the film, excellent perpendicular texture, and very high order parameter at 520 deg. C.

Development of a tensile-stress-induced anisotropy in amorphous magnetic thin films

International Nuclear Information System (INIS)

Mandal, K.; Vazquez, M.; Garcia, D.; Castano, F.J.; Prados, C.; Hernando, A.

2000-01-01

Magnetic anisotropy was induced in positive magnetostrictive Fe 80 B 20 and negative magnetostrictive Co 75 Si 15 B 10 thin films by developing a tensile stress within the samples. The films were grown on the concave surfaces of mechanically bowed glass substrates. On releasing the substrates from the substrate holders, a tensile stress was developed within the samples that modified the domain structure. As a result of it, a magnetic easy axis parallel to the direction of the stress was induced in FeB sample whereas in CoSiB sample the induced easy axis was perpendicular to the direction of the developed stress. To produce magnetic multilayers with crossed anisotropy, FeB/CoSiB bilayers and FeB/Cu/CoSiB trilayers were grown on bowed substrates. The study of magnetic properties of the multilayers indicates the development of crossed anisotropy within them, particularly when the magnetic layers are separated by a nonmagnetic Cu layer

Magnetization process in FePd thin films

International Nuclear Information System (INIS)

Klein, O.; Samson, Y.; Marty, A.; Guillous, S.; Viret, M.; Fermon, C.; Alloul, H.

2001-01-01

A custom made magnetic force microscope is used to study the magnetization process in thin films of FePd throughout the entire hysteresis loop. The 40 nm thick sample has a strong perpendicular anisotropy, which leads to a maze of 80 nm wide stripes of opposite polarity in the remanent state. The growth of M, when H increases, happens through an unwinding of the reversed domain along their axis. Together with the length recession, the reversed domain width also contracts with increasing field. The later effect is estimated by comparison of our images with magneto-optical Kerr measurements. A large disorder in the propagation process of the domain walls is observed. It is also found that the bubble configuration near the saturation field is unstable. [copyright] 2001 American Institute of Physics

Magnetic Thin Films for Perpendicular Magnetic Recording Systems

Science.gov (United States)

Sugiyama, Atsushi; Hachisu, Takuma; Osaka, Tetsuya

In the advanced information society of today, information storage technology, which helps to store a mass of electronic data and offers high-speed random access to the data, is indispensable. Against this background, hard disk drives (HDD), which are magnetic recording devices, have gained in importance because of their advantages in capacity, speed, reliability, and production cost. These days, the uses of HDD extend not only to personal computers and network servers but also to consumer electronics products such as personal video recorders, portable music players, car navigation systems, video games, video cameras, and personal digital assistances.

Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing : Solvent and Thickness Effects

NARCIS (Netherlands)

Yang, Qiuyan; Loos, Katja

2017-01-01

Solvent vapor annealing of block copolymer (BCP) thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for

Highly ordered FEPT and FePd magnetic nano-structures: Correlated structural and magnetic studies

International Nuclear Information System (INIS)

Lukaszew, Rosa Alejandra; Cebollada, Alfonso; Clavero, Cesar; Garcia-Martin, Jose Miguel

2006-01-01

The micro-structure of epitaxial FePt and FePd films grown on MgO (0 0 1) substrates is correlated to their magnetic behavior. The FePd films exhibit high chemical ordering and perpendicular magnetic anisotropy. On the other hand FePt films exhibit low chemical ordering, with nano-grains oriented in two orthogonal directions, forcing the magnetization to remain in the plane of the films

Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

International Nuclear Information System (INIS)

Sun, A.-C.; Hsu, J.-H.; Huang, H.L.; Kuo, P.C.

2006-01-01

This work develops a new method for growing L1 0 FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1 0 FePt(0 0 1) magnetic layer. The squareness of the L1 0 FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1 0 FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1 0 FePt(1 1 1) to L1 0 FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1 0 FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1 0 FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces

Nano-structure formation of Fe-Pt perpendicular magnetic recording media co-deposited with MgO, Al2O3 and SiO2 additives

International Nuclear Information System (INIS)

Safran, G.; Suzuki, T.; Ouchi, K.; Barna, P.B.; Radnoczi, G.

2006-01-01

Perpendicular magnetic recording media samples were prepared by sputter deposition on sapphire with a layer sequence of MgO seed-layer/Cr under-layer/FeSi soft magnetic under-layer/MgO intermediate layer/FePt-oxide recording layer. The effects of MgO, Al 2 O 3 and SiO 2 additives on the morphology and orientation of the FePt layer were investigated by transmission electron microscopy. The samples exhibited (001) orientation of the L1 FePt phase with the mutual orientations of sapphire substrate//MgO(100)[001]//Cr(100)[11-bar0]//FeSi(100)[11-bar0]//MgO(100) [001]//FePt(001)[100]. The morphology of the FePt films varied due to the co-deposited oxides: The FePt layers were continuous and segmented by stacking faults aligned at 54 o to the surface. Films with SiO 2 addition, beside the oriented columnar FePt grains, exhibited a fraction of misoriented crystallites due to random repeated nucleation. Al 2 O 3 addition resulted in a layered structure, i.e. an initial continuous epitaxial FePt layer covered by a secondary layer of FePt-Al 2 O 3 composite. Both components (FePt and MgO) of the MgO-added samples were grown epitaxially on the MgO intermediate layer, so that a nano-composite of intercalated (001) FePt and (001) MgO was formed. The revealed microstructures and formation mechanisms may facilitate the improvement of the structural and magnetic properties of the FePt-oxide composite perpendicular magnetic recording media

Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

Science.gov (United States)

Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

2018-04-01

This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization.

Science.gov (United States)

Chiba, D; Kawaguchi, M; Fukami, S; Ishiwata, N; Shimamura, K; Kobayashi, K; Ono, T

2012-06-06

Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.

Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing: Solvent and Thickness Effects

Directory of Open Access Journals (Sweden)

Qiuyan Yang

2017-10-01

Full Text Available Solvent vapor annealing of block copolymer (BCP thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for nanolithography and hybrid materials preparation. However, precise control of the arising morphologies is essential, but in most cases difficult to achieve. In this work, we investigated the solvent and thickness effects on the morphology of poly(styrene-b-2 vinyl pyridine (PS-b-P2VP thin films with a film thickness range from 0.4 L0 up to 0.8 L0. Ordered perpendicular structures were achieved. One of the main merits of our work is that the phase behavior of the ultra-high molecular weight BCP thin films, which hold a 100-nm sized domain distance, can be easily monitored via current available techniques, such as scanning electron microscope (SEM, atomic force microscope (AFM, and transmission electron microscope (TEM. Systematic monitoring of the self-assembly behavior during solvent vapor annealing can thus provide an experimental guideline for the optimization of processing conditions of related BCP films systems.

Viscosity of two-dimensional strongly coupled dusty plasma modified by a perpendicular magnetic field

Science.gov (United States)

Feng, Yan; Lin, Wei; Murillo, M. S.

2017-11-01

Transport properties of two-dimensional (2D) strongly coupled dusty plasmas have been investigated in detail, but never for viscosity with a strong perpendicular magnetic field; here, we examine this scenario using Langevin dynamics simulations of 2D liquids with a binary Yukawa interparticle interaction. The shear viscosity η of 2D liquid dusty plasma is estimated from the simulation data using the Green-Kubo relation, which is the integration of the shear stress autocorrelation function. It is found that, when a perpendicular magnetic field is applied, the shear viscosity of 2D liquid dusty plasma is modified substantially. When the magnetic field is increased, its viscosity increases at low temperatures, while at high temperatures its viscosity diminishes. It is determined that these different variational trends of η arise from the different behaviors of the kinetic and potential parts of the shear stress under external magnetic fields.

Magnetic properties and configuration of Fe{sub 50}Pt{sub 50*x}Rh{sub x} films

Energy Technology Data Exchange (ETDEWEB)

Fenske, Jochen; Lott, Dieter; Schreyer, Andreas [Helmholt-Zentrum, Geesthacht (Germany); Schmidt, Wolfgang; Schmalzl, Karin [IFF Forschungszentrum, Juelich (Germany); JCNS at ILL (France); Mankey, Gary J. [MINT Center, University of Alabama (United States); Klose, Frank [Ansto, Bragg Institute (Australia); Tartakowskaya, Helena [Institute for Magnetism, National Accademy of Scinece (Ukraine)

2011-07-01

Ordered FePt alloys with L1{sub 0} structure are known as materials with FM order and a high magnetic moment of Fe providing a large magnetization. The large atomic number of Pt on the other hand results in a high magnetic anisotropy. If grown in thin films, the high anisotropy often results in perpendicular magnetization which is the preferred orientation for current magnetic recording media. One way to control the magnetic properties in these materials is through the introduction of a third element into the crystal matrix e.g. Rh. When Rh is added to replace Pt in the equiatomic alloy, new magnetic phases emerge. Here we present neutron diffraction studies on the magnetic properties of different 200nm thick Fe{sub 50}Pt{sub 50*x}Rh{sub x} films in dependence of the temperature and external magnetic fields. Additional resonant x-ray measurements on the Fe and Pt absorption edges provide additional information about the magnetic moments on these sites.

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Directory of Open Access Journals (Sweden)

Mengxing Wang

2015-08-01

Full Text Available Magnetic tunnel junction (MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

Superparamagnetic perpendicular magnetic tunnel junctions for true random number generators

Science.gov (United States)

Parks, Bradley; Bapna, Mukund; Igbokwe, Julianne; Almasi, Hamid; Wang, Weigang; Majetich, Sara A.

2018-05-01

Superparamagnetic perpendicular magnetic tunnel junctions are fabricated and analyzed for use in random number generators. Time-resolved resistance measurements are used as streams of bits in statistical tests for randomness. Voltage control of the thermal stability enables tuning the average speed of random bit generation up to 70 kHz in a 60 nm diameter device. In its most efficient operating mode, the device generates random bits at an energy cost of 600 fJ/bit. A narrow range of magnetic field tunes the probability of a given state from 0 to 1, offering a means of probabilistic computing.

Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model

Science.gov (United States)

Yahagi, Y.; Miura, D.; Sakuma, A.

2018-05-01

We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin-orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.

Spin wave propagation in perpendicular magnetized 20 nm Yttrium Iron Garnet with different antenna design

Science.gov (United States)

Chen, Jilei; Stueckler, Tobias; Zhang, Youguang; Zhao, Weisheng; Yu, Haiming; Chang, Houchen; Liu, Tao; Wu, Mingzhong; Liu, Chuanpu; Liao, Zhimin; Yu, Dapeng; Fert Beijing research institute Team; Colorado State University Team; Peking University Collaboration

Magnonics offers a new way to transport information using spin waves free of charge current and could lead to a new paradigm in the area of computing. Forward volume (FV) mode spin wave with perpendicular magnetized configuration is suitable for spin wave logic device because it is free of non-reciprocity effect. Here, we study FV mode spin wave propagation in YIG thin film with an ultra-low damping. We integrated differently designed antenna i.e., coplanar waveguide and micro stripline with different dimensions. The k vectors of the spin waves defined by the design of the antenna are calculated using Fourier transform. We show FV mode spin wave propagation results by measuring S12 parameter from vector network analyzer and we extract the group velocity of the FV mode spin wave as well as its dispersion relations.

Permanent magnetic properties of NdFe12Nx sputtered films epitaxially grown on V buffer layer

Science.gov (United States)

Sato, T.; Ohsuna, T.; Yano, M.; Kato, A.; Kaneko, Y.

2017-08-01

To clarify the magnetic properties of the NdFe12Nx compound, which shows promise as a high-performance permanent magnet material, NdFe12Nx epitaxial films fabricated by using a V underlayer on MgO (100) single-crystalline substrates were investigated. Nd-Fe films deposited on a V underlayer consist of NdFe12 grains, which have a c-axis orientation perpendicular to the film plane, as well as α-Fe and Nd2Fe17 phases. In the Nd-Fe-N film obtained by subsequent nitridation of the Nd-Fe film, NdFe12Nx grains grew as the dominant phase, and the volume fractions of α-Fe phases dropped below 5%. A Nd-Fe-N film with a thickness of 50 nm exhibits a saturation magnetization (Ms) of 1.7 T, an anisotropy field (HA) of ˜60 kOe, a magnetocrystalline anisotropy energy (K1) of ˜4.1 MJ/m3, and a coercivity (Hc) of 1.7 kOe. The Hc of a Nd-Fe-N film with a thickness of 25 nm is 4.3 kOe. These results indicate that NdFe12Nx compounds have a superior Ms compared to Nd-Fe-B magnets, while the enhancement in Hc is indispensable.

Magnetism of coherent Co and Ni thin films on Cu(111) and Au(111) substrates: An ab initio study

Energy Technology Data Exchange (ETDEWEB)

Zelený, Martin, E-mail: zeleny@fme.vutbr.cz; Dlouhý, Ivo

2017-02-15

We present an ab initio study of structural and magnetic properties of coherent Co and Ni thin films on Cu(111) and Au(111) substrates with thicknesses of up to 6 monolayers. All studied films on Cu(111) substrates prefer structures close their ground state (hcp for Co and fcc for Ni), whereas only the hcp stacking sequence has been found for both films on Au(111) substrates. All studied films exhibit instability of the first monolayer with respect to decomposition into 2-monolayer- or 3-monolayer-high islands, which is in agreement with experimental findings. All studied films are also ferromagnetic, nevertheless the Ni/Cu(111) films reduce their magnetic moments in the layer adjacent to the substrate due to a stronger Cu–Ni interaction at the interface. The magnetic anisotropy of a Co film does not depend on the film thickness: all the studied Co/Au(111) films exhibit a perpendicular magnetic anisotropy, whereas all the Co/Cu(111) films prefer in-plane magnetization. On the other hand, both Ni films change their preference for in-plane orientation of their easy axis to out-of-plane orientation at a critical thickness of 2 monolayers, however, the magnetic anisotropy energies for films thicker than 1 monolayer are smaller than 1 meV/Ni atom. These behaviors of magnetic anisotropy do not depend on the structure of the studied films. - Highlights: • All films exhibit instability of the first monolayer and prefer grow in islands. • The Cu–Ni interaction is responsible for reduced Ni magnetic moments in Ni/Cu(111) films. • The Co/Au(111) and Co/Cu(111) films show different orientations of magnetic anisotropy. • The Ni films exhibit in-plane magnetization only for single monolayer. • Behaviors of magnetic anisotropy do not depend on the structure of the studied films.

Current induced multi-mode propagating spin waves in a spin transfer torque nano-contact with strong perpendicular magnetic anisotropy

Science.gov (United States)

Mohseni, S. Morteza; Yazdi, H. F.; Hamdi, M.; Brächer, T.; Mohseni, S. Majid

2018-03-01

Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free layer, two propagating spin wave modes with different frequency and spatial distribution can be excited simultaneously. Our results indicate that in-plane magnetized spin transfer nano-contacts in PMA materials do not host a solitonic self-localized spin-wave bullet, which is different from previous studies for systems with in plane magnetic anisotropy. This feature renders them interesting for nano-scale magnonic waveguides and crystals since magnon transport can be configured by tuning the applied current.

Perpendicular magnetic anisotropy influence on voltage-driven spin-diode effect in magnetic tunnel junctions: A micromagnetic study

Energy Technology Data Exchange (ETDEWEB)

Frankowski, Marek, E-mail: mfrankow@agh.edu.pl [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); Chȩciński, Jakub [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); AGH University of Science and Technology, al. Mickiewicza 30, Faculty of Physics and Applied Computer Science, 30-059 Kraków (Poland); Skowroński, Witold; Stobiecki, Tomasz [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland)

2017-05-01

We study the influence of the perpendicular magnetic anisotropy on the voltage-induced ferromagnetic resonance in magnetic tunnel junctions (MTJs). An MTJ response to the applied radio-frequency voltage excitation is investigated using micromagnetic calculations with the free layer oriented both in-plane and out-of-plane. Our model allows for a quantitative description of the magnetic system parameters such as resonance frequency, sensitivity or quality factor and for a distinction between material-dependent internal damping and disorder-dependent effective damping. We find that the sensitivity abruptly increases up to three orders of magnitude near the anisotropy transition regime, while the quality factor declines due to effective damping increase. We attribute the origin of this behaviour to the changes of the exchange energy in the system, which is calculated using micromagnetic approach. - Highlights: • Micromagnetic approach is used for modelling of voltage-induced spin-diode effect. • Voltage-induced switching simulations are performed. • Spin-diode line is analyzed as a function of perpendicular anisotropy energy. • Effective damping, quality factor and sensitivity are calculated.

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

Science.gov (United States)

Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

2018-02-14

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

Magnetic switching, relaxation, and domain structure of a Co/Si(111) film

Science.gov (United States)

Baird, M. J.; Bland, J. A. C.; Gu, E.; Ives, A. J. R.; Schumann, F. O.; Hughes, H. P.

1993-11-01

We have used scanning magneto-optic Kerr effect (MOKE) microscopy to investigate the magnetic relaxation of a polycrystalline hcp 125 Å Co/Si(111) film with planar uniaxial anisotropy, on time scales between 10 and 2400 s and with a spatial resolution of 15 μm. In a static magnetic field slightly less than the coercive field and applied along the easy axis direction, domains develop and the magnetization reversal proceeds via displacements of 180° domain walls. Microscopic images of this metastable state allow the 180° domains to be identified by calibration of the MOKE signal with respect to that for the saturated magnetization states. The 180° reversed domains are observed to grow in the direction of the field in the form of narrow fingers, extending via short Barkhausen jumps, randomly spaced in time over the entire time-scale range investigated, with typical distances between pinning sites of the order of microns. This reversal behavior is qualitatively similar to that reported for Au/Co perpendicular anisotropy films a few monolayers thick.

Manipulation of perpendicular magnetic anisotropy of single Fe atom adsorbed graphene via MgO(1 1 1) substrate

Science.gov (United States)

Fu, Mingming; Tang, Weiqing; Wu, Yaping; Ke, Congming; Guo, Fei; Zhang, Chunmiao; Yang, Weihuang; Wu, Zhiming; Kang, Junyong

2018-05-01

Perpendicular magnetic anisotropy is significantly important for realizing a long-term retention of information for spintronics devices. Inspired by 2D graphene with its high charge carrier mobility and long spin diffusion length, we report a first-principles design framework on perpendicular magnetic anisotropy engineering of a Fe atom adsorbed graphene by employing a O-terminated MgO (1 1 1) substrate. Determined by the adsorption sites of the Fe atom, a tunable magnetic anisotropy is realized in Fe/graphene/MgO (1 1 1) structure, with the magnetic anisotropy energy of  ‑0.48 meV and 0.23 meV, respectively, corresponding to the in-plane and out of plane easy magnetizations. Total density of states suggest a half-metallicity with a 100% spin polarization in the system. Decomposed densities of Fe-3d states reveal the orbital contributions to the magnetic anisotropy for different Fe adsorption sites. Bonding interaction and charge redistribution regulated by MgO substrate are found responsible for the novel perpendicular magnetic anisotropy engineering in the system. The effective manipulation of perpendicular magnetic anisotropy in present work offers some references for the design and construction of 2D spintronics devices.

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Science.gov (United States)

Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

2018-05-01

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

Antiferromagnetic iridium-manganese intermediate layers for perpendicular recording media (invited)

Science.gov (United States)

Srinivasan, Kumar; Piramanayagam, S. N.; Sbiaa, Rachid; Kay, Yew Seng; Tan, Hang Khume; Wong, Seng Kai

2009-04-01

Current generation of cobalt-oxide-based perpendicular magnetic recording media uses single or dual ruthenium intermediate layers in order to grow crystallographically textured, and magnetically isolated granular media. In this work, the potential advantages of an antiferromagnetic iridium-manganese intermediate layer directly under the recording layer are highlighted. Owing to its close lattice matching with hexagonal cobalt, iridium-manganese which has the L12, or AuCu3-type crystal structure, can support the heteroepitaxial growth of the cobalt-based recording layer. In one of the media schemes described here, (111) textured iridium-manganese thin film was grown on 7.5 nm thick ruthenium layer. On the iridium-manganese as segregation layer, the Co-oxide-based magnetic recording layer showed perpendicular texture with Δθ50 below 4°, coercivity of over 4000 Oe alongside magnetic exchange decoupling, average grain sizes of 6 nm with distributions under 14%, and improved thermal stability. Measurements of the anisotropy constant did not show any significant change and even an IrMn capping layer was observed to improve the thermal stability. The possible mechanisms through which the IrMn layer could affect the thermal stability are hypothesized. The initial layers of the magnetic recording layer on IrMn segregation layers also showed exchange-decoupled and segregated grains, which is unlike that observed on Ru segregation layers. In a second media scheme, (111) textured iridium-manganese thin film was grown on a crystalline soft magnetic underlayer belonging on top of amorphous soft underlayers. In this scheme, partial pinning of the soft underlayer due to exchange-bias interaction with the IrMn layer was observed. This scheme offers the possibility to reduce the intermediate layer thickness, thus improve media writability, and with further optimization, could potentially facilitate the approach toward 1 Tbits/in.2.

Interfacial exchange coupling and magnetization reversal in perpendicular [Co/Ni]N/TbCo composite structures.

Science.gov (United States)

Tang, M H; Zhang, Zongzhi; Tian, S Y; Wang, J; Ma, B; Jin, Q Y

2015-06-15

Interfacial exchange coupling and magnetization reversal characteristics in the perpendicular heterostructures consisting of an amorphous ferrimagnetic (FI) TbxCo(100-x) alloy layer exchange-coupled with a ferromagnetic (FM) [Co/Ni]N multilayer have been investigated. As compared with pure TbxCo(100-x) alloy, the magnetization compensation composition of the heterostructures shift to a higher Tb content, implying Co/Ni also serves to compensate the Tb moment in TbCo layer. The net magnetization switching field Hc⊥ and interlayer interfacial coupling field Hex, are not only sensitive to the magnetization and thickness of the switched TbxCo(100-x) or [Co/Ni]N layer, but also to the perpendicular magnetic anisotropy strength of the pinning layer. By tuning the layer structure we achieve simultaneously both large Hc⊥ = 1.31 T and Hex = 2.19 T. These results, in addition to the fundamental interest, are important to understanding of the interfacial coupling interaction in the FM/FI heterostructures, which could offer the guiding of potential applications in heat-assisted magnetic recording or all-optical switching recording technique.

Properties of a Bound Polaron under a Perpendicular Magnetic Field

International Nuclear Information System (INIS)

Liu Jia; Chen Ziyu; Xiao Jinglin; Huo Shufen

2007-01-01

We investigate the influence of a perpendicular magnetic field on a bound polaron near the interface of a polar-polar semiconductor with Rashba effect. The external magnetic field strongly changes the ground state binding energy of the polaron and the Rashba spin-orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splits the ground state binding energy of the bound polaron. In this paper, we have shown how the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity, the wave vector of the electron and the electron areal density, taking into account the SO coupling. Due to the presence of the phonons, whose energy gives negative contribution to the polaron's, the spin-splitting states of the bound polaron are more stable, and we find that in the condition of week magnetic field, the Zeeaman effect can be neglected.

Magnetic and thermal properties of amorphous TbFeCo alloy films

Science.gov (United States)

Wang, Ke; Dong, Shuo; Huang, Ya; Qiu, Yuzhen

2017-07-01

Amorphous TbFeCo material with perpendicular magnetic anisotropy is currently attracting more attention for potential applications in spintronic devices and logic memories. We systematically investigate magnetic, structural, thermal, optical and electrical properties of TbFeCo alloy films. It shows out-of-plane easy axis of the films turns into in-plane orientation after annealing. Significant increase in saturation magnetization in the temperature range between 400 and 450 °C is revealed by thermomagnetic measurements. The occurrence of crystallization and oxidation at high temperatures is confirmed by X-ray diffraction measurements. Pronounced changes in optical reflectance and sheet resistance are observed with temperature, in line with structural relaxation and change. The activation barriers for crystallization and oxidation are determined to be 1.01 eV and 0.83 eV, respectively, for FeCo-rich and Tb-rich samples. Better thermal stability against crystallization and oxidation is demonstrated in the FeCo-rich sample than the Tb-rich type. Our results provide some useful information for the alloy used in device fabrication.

Effect of soft underlayer magnetic anisotropy on perpendicular recording process

International Nuclear Information System (INIS)

Lim, C.K.; Kim, E.S.; Yoon, S.Y.; Kong, S.H.; Lee, H.S.; Oh, H.S.; Kim, Y.S.

2007-01-01

The presence of the soft magnetic underlayer (SUL) in perpendicular magnetic recording (PMR) media is essential for the application. It is commonly understood that the SUL provides the return flux path and enhances the writing field by enhancing the recording field from the write pole. However, SUL increases the magnetic noise during the read back process due to magnetic domain walls in the SUL. Hence, it is common to grow SUL with large uniaxial or unidirectional magnetic anisotropy field (H k ) to reduce domain wall noise. In this paper, we explore the effect of increasing SUL H k on the recording process. We studied this effect by using the finite element micromagnetic simulation. Our simulation results show that the contribution of SUL to the writing field amplitude is reduced with increasing H k . This reduction in magnetic field from high H k SUL actually improves the recording performance due to the better field gradient at SUL. The simulation results are qualitatively consistent with the actual experimental data obtained from the Guzik measurement

Relaxation dynamics of magnetization transitions in synthetic antiferromagnet with perpendicular anisotropy

Science.gov (United States)

Talantsev, A.; Lu, Y.; Fache, T.; Lavanant, M.; Hamadeh, A.; Aristov, A.; Koplak, O.; Morgunov, R.; Mangin, S.

2018-04-01

Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (P state) to a state where magnetizations of the two layers are aligned antiparallel (AP state). The second one concerns transitions between the two possible antiparallel alignments (AP+  to AP-). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation—propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.

Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

Energy Technology Data Exchange (ETDEWEB)

Gan, Huadong, E-mail: huadong@avalanche-technology.com; Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming [Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538 (United States)

2014-11-10

Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

Wave packet revivals in a graphene quantum dot in a perpendicular magnetic field

International Nuclear Information System (INIS)

Torres, J. J.; Romera, E.

2010-01-01

We study the time evolution of localized wave packets in graphene quantum dots in a perpendicular magnetic field, focusing on the quasiclassical and revival periodicities, for different values of the magnetic field intensities in a theoretical framework. We have considered contributions of the two inequivalent points in the Brillouin zone. The revival time has been found as an observable that shows the break valley degeneracy.

Influence of inhomogeneous coercivities on media noise in granular perpendicular media investigated by using magnetic force microscopy

International Nuclear Information System (INIS)

Bai, J.; Takahoshi, H.; Ito, H.; Rheem, Y.W.; Saito, H.; Ishio, S.

2004-01-01

We investigated the influence of the inhomogeneous coercivities on the media noise in a CoPtCr-SiO 2 granular perpendicular magnetic recording medium via ex situ and in situ magnetic force microscopy (MFM) techniques. The ex situ MFM analyses exhibited that transition zigzags contributed to strong magnetic clusters in noise images, and thus resulted in dominant component of the media noise. According to the in situ MFM measurements, it was suggested that an amount of magnetic grains inside a microscopic area reversed like one magnetic ''particle because of strong inter-grain exchange coupling, and that these microscopic areas showed their local magnetic switching behaviors. A mathematic transformation was used to obtain approximately the magnetization distribution in recording layer. And the individual microscopic areas inside recorded bits were compared quasi-quantitatively with those leading large transition zigzags in magnetization switching behaviors. It was indicated that the inhomogeneous coercivities is one of crucial reasons of the medium noise in the perpendicular magnetic recording

Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

Science.gov (United States)

Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

2018-05-01

Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

Influence of mechanical scratch on the recorded magnetization stability of perpendicular recording media

International Nuclear Information System (INIS)

Nagano, Katsumasa; Sasaki, Syota; Futamoto, Masaaki

2010-01-01

Stability of recorded magnetization of hard disk drives (HDDs) is influenced by external environments, such as temperature, magnetic field, etc. Small scratches are frequently formed on HDD medium surface upon contacts with the magnetic head. Influence of temperature and mechanical scratch on the magnetization structure stability of perpendicular recording media was investigated by using a magnetic force microscope. The magnetic bit shape started to change at around 300 0 C for an area with no scratches, whereas for the area near a shallow mechanical scratch it started to change at a lower temperature around 250 0 C. An analysis of magnetization structure under an influence of temperature and mechanical scratch is carried out for the magnetization structure variation and recorded magnetization strength.

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

Science.gov (United States)

Gajek, M.; Nowak, J. J.; Sun, J. Z.; Trouilloud, P. L.; O'Sullivan, E. J.; Abraham, D. W.; Gaidis, M. C.; Hu, G.; Brown, S.; Zhu, Y.; Robertazzi, R. P.; Gallagher, W. J.; Worledge, D. C.

2012-03-01

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

Partial phase transition and quantum effects in helimagnetic films under an applied magnetic field

Energy Technology Data Exchange (ETDEWEB)

El Hog, Sahbi, E-mail: sahbi.el-hog@u-cergy.fr; Diep, H.T., E-mail: diep@u-cergy.fr

2017-05-01

We study the phase transition in a helimagnetic film with Heisenberg spins under an applied magnetic field in the c direction perpendicular to the film. The helical structure is due to the antiferromagnetic interaction between next-nearest neighbors in the c direction. Helimagnetic films in zero field are known to have a strong modification of the in-plane helical angle near the film surfaces. We show that spins react to a moderate applied magnetic field by creating a particular spin configuration along the c axis. With increasing temperature (T), using Monte Carlo simulations we show that the system undergoes a phase transition triggered by the destruction of the ordering of a number of layers. This partial phase transition is shown to be intimately related to the ground-state spin structure. We show why some layers undergo a phase transition while others do not. The Green's function method for non collinear magnets is also carried out to investigate effects of quantum fluctuations. Non-uniform zero-point spin contractions and a crossover of layer magnetizations at low T are shown and discussed. - Highlights: • Monte Carlo simulations were carried out to study a helimagnetic film in a field. • Partial phase transition is found in some layers of the film. • Mechanism leading to the partial disordering is analyzed using the ground state symmetry. • Quantum fluctuations at surface are calculated using the Green's function.

Bifurcation magnetic resonance in films magnetized along hard magnetization axis

Energy Technology Data Exchange (ETDEWEB)

Vasilevskaya, Tatiana M., E-mail: t_vasilevs@mail.ru [Ulyanovsk State University, Leo Tolstoy 42, 432017 Ulyanovsk (Russian Federation); Sementsov, Dmitriy I.; Shutyi, Anatoliy M. [Ulyanovsk State University, Leo Tolstoy 42, 432017 Ulyanovsk (Russian Federation)

2012-09-15

We study low-frequency ferromagnetic resonance in a thin film magnetized along the hard magnetization axis performing an analysis of magnetization precession dynamics equations and numerical simulation. Two types of films are considered: polycrystalline uniaxial films and single-crystal films with cubic magnetic anisotropy. An additional (bifurcation) resonance initiated by the bistability, i.e. appearance of two closely spaced equilibrium magnetization states is registered. The modification of dynamic modes provoked by variation of the frequency, amplitude, and magnetic bias value of the ac field is studied. Both steady and chaotic magnetization precession modes are registered in the bifurcation resonance range. - Highlights: Black-Right-Pointing-Pointer An additional bifurcation resonance arises in a case of a thin film magnetized along HMA. Black-Right-Pointing-Pointer Bifurcation resonance occurs due to the presence of two closely spaced equilibrium magnetization states. Black-Right-Pointing-Pointer Both regular and chaotic precession modes are realized within bifurcation resonance range. Black-Right-Pointing-Pointer Appearance of dynamic bistability is typical for bifurcation resonance.

Bifurcation magnetic resonance in films magnetized along hard magnetization axis

International Nuclear Information System (INIS)

Vasilevskaya, Tatiana M.; Sementsov, Dmitriy I.; Shutyi, Anatoliy M.

2012-01-01

We study low-frequency ferromagnetic resonance in a thin film magnetized along the hard magnetization axis performing an analysis of magnetization precession dynamics equations and numerical simulation. Two types of films are considered: polycrystalline uniaxial films and single-crystal films with cubic magnetic anisotropy. An additional (bifurcation) resonance initiated by the bistability, i.e. appearance of two closely spaced equilibrium magnetization states is registered. The modification of dynamic modes provoked by variation of the frequency, amplitude, and magnetic bias value of the ac field is studied. Both steady and chaotic magnetization precession modes are registered in the bifurcation resonance range. - Highlights: ► An additional bifurcation resonance arises in a case of a thin film magnetized along HMA. ► Bifurcation resonance occurs due to the presence of two closely spaced equilibrium magnetization states. ► Both regular and chaotic precession modes are realized within bifurcation resonance range. ► Appearance of dynamic bistability is typical for bifurcation resonance.

Probing structure-property relationships in perpendicularly magnetized Fe/Cu(001) using MXLD and XPD

Energy Technology Data Exchange (ETDEWEB)

Cummins, T.R.; Waddill, G.D. [Univ. of Missouri, Rolla, MO (United States); Goodman, K.W. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Magnetic X-ray Linear Dichroism (MXLD) in Photoelectron Spectroscopy and X-Ray Photoelectron Diffraction (XPD) of the Fe 3p core level have been used to probe the magnetic structure-property relationships of perpendicularly magnetized Fe/Cu(001), in an element-specific fashion. A strong MEXLD effect was observed in the high resolution photoelectron spectroscopy of the Fe 3p at {open_quotes}normal{close_quotes} emission and was used to follow the loss of perpendicular ferromagnetic ordering as the temperature was raised toward room temperature. In parallel with this, {open_quotes}Forward Focussing{close_quotes} in XPD was used as a direct measure of geometric structure in the overlayer. These results and the implications of their correlation will be discussed. Additionally, an investigation of the effect of Mn doping of the Fe/Cu(001) will be described. These measurements were performed at the Spectromicroscopy Facility (Beamline 7.0.1) of the Advanced Light Source.

Static and dynamic magnetization properties of Y1Ba2Cu3Oz thin films

International Nuclear Information System (INIS)

Sekula, S.T.

1989-08-01

Magnetization studies were carried out on Y 1 Ba 2 Cu 3 O z (YBCO) thin films that were e-beam evaporated onto circular discs of single-crystal SrTiO 3 with (001) and (110) faces as well as KTaO 3 with (001) faces. The measurements were made using vibrating sample (VSM) and SQUID-based magnetometry with the applied field perpendicular to the substrate surface. Critical current densities J c (H,T) are deduced from the magnetic hysteresis. Flux creep effects are observed over longer periods with the SQUID magnetometer. Analysis of the results of low frequency response of these films to collinear ac and dc magnetic fields are compared with the dc magnetometry results. J c (H,T) is observed to be quite sensitive to the type of epitaxial growth on the various substrates. 16 refs., 10 figs

Characteristics of thermally assisted magnetic recording in granular perpendicular media

International Nuclear Information System (INIS)

Shiino, Hirotaka; Kawana, Mayumi; Miyashita, Eiichi; Hayashi, Naoto; Watanabe, Sadayuki

2009-01-01

The effect of thermally assisted magnetic recording using granular perpendicular media with a single-pole-trimmed head has been investigated. A read/write experiment using a spin stand in which the media were heated by laser irradiation demonstrated that the track average amplitude strongly depends on both the position of the write head relative to the center of the laser spot in the down-track direction and on the laser power. Although the signal-to-noise ratio increased with the coercivity of the media, the increment was small; this is thought to be caused by an increase in the switching field distribution of the media with temperature. Our results suggest that the magnetic constant of the media must be optimized with respect to the temperature of writing in order for high-density thermally assisted magnetic recording to be realized

Growth and structure of Co/Au magnetic thin films

International Nuclear Information System (INIS)

Marsot, N.

1999-01-01

We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

Nd composition dependence of microstructure and magnetic properties for gradient sputtered NdFeB films

International Nuclear Information System (INIS)

Li Shandong; Wang Dawei; Fang Jianglin; Duh, J.-G.; Wang Yinying; Wu Yizhi; Huang Junheng; Zheng Hongjun

2008-01-01

NdFeB films with Nd compositions varied from 13.34 to 24.30 at% were deposited by DC gradient sputtering using targets Nd 12.5 Fe 71.5 B 16 and Nd. The hard magnetic properties, grain growth direction and magnetic domain structures were dramatically influenced by Nd composition. The samples with intermediate Nd concentrations exhibited optimal magnetic properties and microstructures, such as large squareness ratio over 0.9, large energy product up to 174 kJ/m 3 , and vertical domain structure. However, the samples with higher and lower Nd compositions showed almost isotropic loops. (0 0 l) as main X-ray diffraction peaks in the optimal Nd composition region indicated most of Nd 2 Fe 14 B grains with c-axis perpendicular to the film plane, while NdFeB grains in other region are almost random growth. The good magnetic properties can be attributed to the vertical growth of Nd 2 Fe 14 B grains

Nd composition dependence of microstructure and magnetic properties for gradient sputtered NdFeB films

Energy Technology Data Exchange (ETDEWEB)

Li Shandong [Department of Physics, Fujian Normal University, Fuzhou 350007 (China)], E-mail: dylsd007@yahoo.com.cn; Wang Dawei [Department of Physics, Fujian Normal University, Fuzhou 350007 (China); Fang Jianglin [Center for Materials Analysis, Nanjing University, Nanjing 210093 (China); Duh, J.-G. [Department of Materials Science and Engineering, National TsingHua Universtiy, Hsinchu, Taiwan (China); Wang Yinying; Wu Yizhi; Huang Junheng; Zheng Hongjun [Department of Physics, Fujian Normal University, Fuzhou 350007 (China)

2008-08-15

NdFeB films with Nd compositions varied from 13.34 to 24.30 at% were deposited by DC gradient sputtering using targets Nd{sub 12.5}Fe{sub 71.5}B{sub 16} and Nd. The hard magnetic properties, grain growth direction and magnetic domain structures were dramatically influenced by Nd composition. The samples with intermediate Nd concentrations exhibited optimal magnetic properties and microstructures, such as large squareness ratio over 0.9, large energy product up to 174 kJ/m{sup 3}, and vertical domain structure. However, the samples with higher and lower Nd compositions showed almost isotropic loops. (0 0 l) as main X-ray diffraction peaks in the optimal Nd composition region indicated most of Nd{sub 2}Fe{sub 14}B grains with c-axis perpendicular to the film plane, while NdFeB grains in other region are almost random growth. The good magnetic properties can be attributed to the vertical growth of Nd{sub 2}Fe{sub 14}B grains.

Stability analysis of perpendicular magnetic trilayers with a field-like spin torque

International Nuclear Information System (INIS)

Wang, Ri-Xing; Zhao, Jing-Li; He, Peng-Bin; Gu, Guan-Nan; Li, Zai-Dong; Pan, An-Lian; Liu, Quan-Hui

2013-01-01

We have analytically studied the magnetization dynamics in magnetic trilayers with perpendicular anisotropy for both free and pinned layers. By linear stability analysis, we obtain the phase diagram parameterized by the current, magnetic field and relative strength of the field-like spin torque to Slonczewski torque. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out-of-plane precession, and bistable states can be realized. The precession frequency can be expressed as a function of the current and external magnetic field. In addition, the presence of field-like spin torque can change the switching current and precession frequency. - Highlights: ► The phase diagram is obtained by linear stability analysis. ► The precession frequency can be controlled by the current and magnetic field. ► Field-like spin torque can change instability current and precession frequency.

Magnetic history dependence of metastable states in thin films with dipolar interactions

International Nuclear Information System (INIS)

Iglesias, Oscar; Labarta, Amilcar

2000-01-01

We present the results of a Monte Carlo simulation of the ground state and magnetic relaxation of a model of a thin film consisting of a two-dimensional square lattice of Heisenberg spins with perpendicular anisotropy K, exchange J and long-range dipolar interactions g. We have studied the ground state configurations of this system for a wide range of the interaction parameters J/g, K/g by means of the simulated annealing procedure, showing that the model is able to reproduce the different magnetic configurations found in real samples. We have found the existence of a certain range of K/g, J/g values for which in-plane and out-of-plane configurations are quasi-degenerated in energy. We show that when a system in this region of parameters is perturbed by an external force that is subsequently removed, different kinds of ordering may be induced depending on the followed procedure. In particular, simulations of relaxations from saturation under an AC demagnetizing field or in zero field are in qualitative agreement with recent experiments on epitaxial and granular alloy thin films, which show a wide variety of magnetic patterns depending on their magnetic history

Capping layer-tailored interface magnetic anisotropy in ultrathin Co2FeAl films

International Nuclear Information System (INIS)

Belmeguenai, M.; Zighem, F.; Chérif, S. M.; Gabor, M. S.; Petrisor, T.; Tiusan, C.

2015-01-01

Co 2 FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of −0.46 erg/cm 2 and 0.74 erg/cm 2 for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin

Magnetic bubbles and domain evolution in Fe/Gd multilayer nanodots

Science.gov (United States)

Wang, T. T.; Liu, W.; Dai, Z. M.; Zhao, X. T.; Zhao, X. G.; Zhang, Z. D.

2018-04-01

The formation of magnetic bubbles and the domain-evolution processes, induced by a perpendicular magnetic field in Fe/Gd multilayer films and nanodots, have been investigated. At room temperature, the stripe domains in a continuous film transform into magnetic bubbles in an external field, while bubbles form spontaneously in nanodots due to the existence of shape anisotropy. When the temperature decreases to 20 K, the enhancement of the perpendicular magnetic anisotropy of the samples results in an increase of the domain size in the continuous film and the magnetization-reversal behavior of each nanodot becomes independent, and most reversed dots do not depend on each other, indicating the magnetic characteristics of a single domain. The present research provides further understanding of the evolution of magnetic bubbles in the Fe/Gd system and suggests their promising applications in patterned recording materials.

Magnetization Controlled Superconductivity in a Film with Magnetic Dots

International Nuclear Information System (INIS)

Lyuksyutov, I.F.; Pokrovsky, V.; Pokrovsky, V.

1998-01-01

We consider a superconducting film with a magnetic dots array (MDA) placed upon it. Magnetic moments of the dots are normal to the film and strong enough to create vortices in the superconducting film. Magnetic interaction between dots is negligible. Zero-field cooling leads to random magnetization of the MDA well above the superconducting temperature. With this cooling, the film is in a resistive state below the (expected) superconducting transition. Paradoxically, when field cooled, the film with MDA can be superconducting. copyright 1998 The American Physical Society

Solvent Annealing Induced Perpendicular Orientation of Cylindrical Microdomains in Polystyrene-b-poly(4-hydroxyl styrene)/PEG Oligomer Blend Thin Film Made by Spin-coating from Selective Solvent

Energy Technology Data Exchange (ETDEWEB)

Matsutani, Taito; Yamamoto, Katsuhiro, E-mail: yamamoto.katsuhiro@nitech.ac.jp [Department of Materials Science and Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2011-01-01

The microphase separated structure of PS-b-PHS/PEG blend thin film with thickness of 500 {approx} 600 nm was investigated by grazing incidence small angle X-ray scattering. The thin film was obtained by two different solutions; one was THF which was common good solvent for all components of polymers used here. The other is toluene which was selective solvent for PS and poor-solvent for PHS and PEG. The equilibrium morphology of the block copolymer and blend sample was hexagonally packed cylinder in the bulk and thin film. The structure in the thin film obtained by spin cast from toluene solution was non-equilibrium. After THF vopar annealing of the thin film (cast from toluene), the highly ordered and perpendicular oriented cylindrical structure was obtained. Perpendicular orientation was failure when the thin film sample made by spin cast from THF solution and subsequent THF vapor annealing. The perpendicular nano-holes were fabricated after removing PEG oligomer by washing with water.

Restoration the domain structure from magnetic force microscopy image

Science.gov (United States)

Wu, Dongping; Lou, Yuanfu; Wei, Fulin; Wei, Dan

2012-04-01

This contribution gives an approximation method to calculate the stray field of the scanning plane from the magnetic force microscopy (MFM) force gradient image. Before calculation, a Butterworth low-pass filter has been used to remove a part of the noise of the image. The discrete Fourier transform (DFT) method has been used to calculate the magnetic potential of the film surface. It shows that the potential is not correct because the low-frequency noise has been enlarged. The approximation method gives a better result of the potential and proves that the MFM force gradient of the perpendicular component image also gives the perpendicular component of the stray field. Supposing that the distance between the tip and the sample is as small as near zero, the force gradient image also gives the magnetic charge distribution of the film surface. So if the orientation of the film from hysteresis loop is known, then the domain structure of the film can be determined. For perpendicular orientation, the absolution value of the perpendicular component of stray field gives the domain and domain wall position. For in-plane orientation, the absolution value of in-plane component of stray field gives the domain and domain wall position.

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

Science.gov (United States)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

Tilted spin torque-driven ferromagnetic resonance in a perpendicular-analyzer magnetic trilayer

International Nuclear Information System (INIS)

Wang Rixing; He Pengbin; Liu Quanhui; Li Zaidong; Pan Anlian; Zou Bingsuo; Wang Yanguo

2010-01-01

A theoretical study is presented on the current-driven ferromagnetic resonance in the magnetic trilayers. On the basis of the Landau-Lifshitz-Gilbert-Slonczewski equation, we derive the output dc voltage for arbitrary anisotropy in the free and pinned layers by the linearization method. As an example, the resonance spectra of the tilted-polarizer and perpendicular-analyzer trilayer show that the equilibrium position, the resonant linewidth and the resonant location can be tuned by changing the magnitude and the direction of spin torque. The effective damping can be minimized through adjusting the current and the pinned-layer magnetization direction.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr_2Se_4 thin films

International Nuclear Information System (INIS)

Esters, Marco; Liebig, Andreas; Ditto, Jeffrey J.; Falmbigl, Matthias; Albrecht, Manfred; Johnson, David C.

2016-01-01

We report the low temperature synthesis of highly textured CuCr_2Se_4 thin films using the modulated elemental reactant (MER) method. The structure of CuCr_2Se_4 is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr_2Se_4. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr_2Se_4 synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10"6 erg cm"−"3; shape anisotropy: 1.07 × 10"6 erg cm"−"3), with the easy axis lying out of plane, and a larger magnetic moment (6 μ_B/f.u.) than bulk CuCr_2Se_4. - Highlights: • Crystallographically aligned, phase pure CuCr_2Se_4 were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the direction. • The magnetization is larger than bulk CuCr_2Se_4 or other CuCr_2Se_4 films made to date.

Magnetic Phase Transition in Ion-Irradiated Ultrathin CoN Films via Magneto-Optic Faraday Effect.

Science.gov (United States)

Su, Chiung-Wu; Chang, Yen-Chu; Chang, Sheng-Chi

2013-11-15

The magnetic properties of 1 nm thick in-plane anisotropic Co ultrathin film on ZnO(0001) were investigated through successive 500 eV nitrogen-ion sputtering. Magneto-optical Faraday effects were used to observe the evolution of the ion-irradiated sample in longitudinal and perpendicular magnetic fields. The ferromagnetic phase of the initial in-plane anisotropic fcc β-Co phase transformation to β-Co(N) phase was terminated at paramagnetic CoN x phase. In-plane anisotropy with weak out-of-plane anisotropy of the Co/ZnO sample was initially observed in the as-grown condition. In the sputtering process, the N⁺ ions induced simultaneous sputtering and doping. An abrupt spin reorientation behavior from in-plane to out-of-plane was found under prolonged sputtering condition. The existence of perpendicular anisotropy measured from the out-of-plane Faraday effect may be attributed to the co-existence of residual β-Co and Co₄N exchange bonding force by the gradual depletion of Co-N thickness.

Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

Science.gov (United States)

Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

2017-07-01

The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

Capping layer-tailored interface magnetic anisotropy in ultrathin Co{sub 2}FeAl films

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, M., E-mail: belmeguenai.mohamed@univ-paris13.fr; Zighem, F.; Chérif, S. M. [LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Gabor, M. S., E-mail: mihai.gabor@phys.utcluj.ro; Petrisor, T. [Center for Superconductivity, Spintronics and Surface Science, Department of Physics and Chemistry, Technical University of Cluj-Napoca, Str. Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, C. [Center for Superconductivity, Spintronics and Surface Science, Department of Physics and Chemistry, Technical University of Cluj-Napoca, Str. Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Lorraine Université, BP 70239, F-54506 Vandoeuvre (France)

2015-01-14

Co{sub 2}FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of −0.46 erg/cm{sup 2} and 0.74 erg/cm{sup 2} for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin.

Magnetic Cellulose Nanocrystal Based Anisotropic Polylactic Acid Nanocomposite Films: Influence on Electrical, Magnetic, Thermal, and Mechanical Properties.

Science.gov (United States)

Dhar, Prodyut; Kumar, Amit; Katiyar, Vimal

2016-07-20

This paper reports a single-step co-precipitation method for the fabrication of magnetic cellulose nanocrystals (MGCNCs) with high iron oxide nanoparticle content (∼51 wt % loading) adsorbed onto cellulose nanocrystals (CNCs). X-ray diffraction (XRD), Fourier transform infrared (FTIR), and Raman spectroscopic studies confirmed that the hydroxyl groups on the surface of CNCs (derived from the bamboo pulp) acted as anchor points for the adsorption of Fe3O4 nanoparticles. The fabricated MGCNCs have a high magnetic moment, which is utilized to orient the magnetoresponsive nanofillers in parallel or perpendicular orientations inside the polylactic acid (PLA) matrix. Magnetic-field-assisted directional alignment of MGCNCs led to the incorporation of anisotropic mechanical, thermal, and electrical properties in the fabricated PLA-MGCNC nanocomposites. Thermomechanical studies showed significant improvement in the elastic modulus and glass-transition temperature for the magnetically oriented samples. Differential scanning calorimetry (DSC) and XRD studies confirmed that the alignment of MGCNCs led to the improvement in the percentage crystallinity and, with the absence of the cold-crystallization phenomenon, finds a potential application in polymer processing in the presence of magnetic field. The tensile strength and percentage elongation for the parallel-oriented samples improved by ∼70 and 240%, respectively, and for perpendicular-oriented samples, by ∼58 and 172%, respectively, in comparison to the unoriented samples. Furthermore, its anisotropically induced electrical and magnetic properties are desirable for fabricating self-biased electronics products. We also demonstrate that the fabricated anisotropic PLA-MGCNC nanocomposites could be laminated into films with the incorporation of directionally tunable mechanical properties. Therefore, the current study provides a novel noninvasive approach of orienting nontoxic bioderived CNCs in the presence of low

Counterstreaming magnetized plasmas. II. Perpendicular wave propagation

International Nuclear Information System (INIS)

Tautz, R.C.; Schlickeiser, R.

2006-01-01

The properties of longitudinal and transverse oscillations in magnetized symmetric counterstreaming Maxwellian plasmas with equal thermal velocities for waves propagating perpendicular to the stream direction are investigated on the basis of Maxwell equations and the nonrelativistic Vlasov equation. With the constraint of vanishing particle flux in the stream direction, three distinct dispersion relations are known, which are the ordinary-wave mode, the Bernstein wave mode, and the extraordinary electromagnetic wave mode, where the latter two are only approximations. In this article, all three dispersion relations are evaluated for a counterstreaming Maxwellian distribution function in terms of the hypergeometric function 2 F 2 . The growth rates for the ordinary-wave mode are compared to earlier results by Bornatici and Lee [Phys. Fluids 13, 3007 (1970)], who derived approximate results, whereas in this article the exact dispersion relation is solved numerically. The original results are therefore improved and show differences of up to 21% to the results obtained in this article

Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

Energy Technology Data Exchange (ETDEWEB)

Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)

2012-03-15

Co/Pd epitaxial multilayer films were prepared on Pd(111){sub fcc} underlayers hetero-epitaxially grown on MgO(111){sub B1} single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed. - Highlights: Black-Right-Pointing-Pointer Epitaxial Co/Pd multilayer films are prepared on Pd(111){sub fcc} underlayers. Black-Right-Pointing-Pointer Lattice strain in Co layer and CoPd-alloy formation are noted around the interface. Black-Right-Pointing-Pointer Magnetic property dependence on layer thickness is reported.

Magnetic ground and remanent states of synthetic metamagnets with perpendicular anisotropy

International Nuclear Information System (INIS)

Kiselev, N S; Roessler, U K; Bogdanov, A N; Hellwig, O

2011-01-01

In this work, we summarize our theoretical results within a phenomenological micromagnetic approach for magnetic ground state and nonequilibrium states as topological magnetic defects in multilayers with strong perpendicular anisotropy and antiferromagnetic (AF) interlayer exchange coupling (IEC), e.g. [Co/Pt(Pd)]/Ru(Ir, NiO). We give detailed analysis of our model together with the most representative results which elucidate common features of such systems. We discuss phase diagrams of the magnetic ground state, and compare solutions of our model with experimental data. A model to assess the stability of so-called tiger tail patterns is presented. It is found that these modulated topological defect cannot be stabilized by an interplay between magnetostatic and IEC energies only. It is argued that tiger tail patterns arise as nuclei of ferro-stripe structure in AF domain walls and that they are stabilized by domain wall pinning.

Magnetic anisotropy and chemical long-range order in epitaxial ferrimagnetic CrPt sub 3 films

CERN Document Server

Maret, M; Köhler, J; Poinsot, R; Ulhaq-Bouillet, C; Tonnerre, J M; Berar, J F; Bucher, E

2000-01-01

Thin films of CrPt sub 3 were prepared by molecular beam epitaxy on both Al sub 2 O sub 3 (0 0 0 1) and MgO(0 0 1) substrates, either directly by co-deposition of Cr and Pt at high temperatures or after in situ annealing of superlattices [Cr(2 A)/Pt(7 A)]. In situ RHEED observations and X-ray diffraction measurements have allowed us to check the single-crystal quality of CrPt sub 3 films and to determine the degree of L1 sub 2 -type long-range order (LRO). In films co-deposited between 850 deg. C and 950 deg. C a nearly perfect LRO has been observed. As in bulk alloys, such ordering yields a ferrimagnetic order, while the disordered films are non-magnetic. In contrast with the ferromagnetic L1 sub 2 -type ordered CoPt sub 3 (1 1 1) films, the ferrimagnetic CrPt sub 3 (1 1 1) films exhibit perpendicular magnetic anisotropy with quality factors, K sub u /K sub d , as large as 5 and large coercivities around 450 kA/m. Such anisotropy could be related to the arrangement of Cr atoms, which owing to their large mag...

Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

International Nuclear Information System (INIS)

Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

2012-01-01

Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

Nanoscale control of stripe-ordered magnetic domain walls by vertical spin transfer torque in La0.67Sr0.33MnO3 film

Science.gov (United States)

Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing

2018-02-01

Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.

Heating of charged particles by electrostatic wave propagating perpendicularly to uniform magnetic field

International Nuclear Information System (INIS)

Niu, Keishiro; Shimojo, Takashi.

1978-02-01

Increase in kinetic energy of a charged particle, affected by an electrostatic wave propagating perpendicularly to a uniform magnetic field, is obtained for both the initial and later stages. Detrapping time of the particle from the potential dent of the electrostatic wave and energy increase during trapping of the particle is analytically derived. Numerical simulations are carried out to support theoretical results. (auth.)

Effects of small magnetic fields on the critical current of thin films

International Nuclear Information System (INIS)

Passos, Wagner de Assis Cangussu; Lisboa-Filho, Paulo Noronha; Ortiz, Wilson Aires; Kang, W.N.; Choi, Eun-Mi; Hyeong-Jin, Kim; Lee, Sung-Ik Lee

2002-01-01

Full text: Magnetic fields applied perpendicularly to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist, as observed in Nb, YBaCuO and MgB 2 [1]. A temperature-dependent limiting-field, Hd(T), separates the dendritic mode from a critical-state-like penetration regime. Due to large demagnetizing factors in the perpendicular geometry, small fields may be enough to drive portions of the sample into the mixed state. Lack of symmetry and local defects might then permeate the dendritic mode. Hd(T) is related[2] to the bulk lower critical field, Hc1, which depends on the in-plane current density, J. Not surprisingly, Hd is depressed by J[3]. The dendritic mode can be detected by the AC-susceptibility: penetrated fingers act as intergranular material, and the imaginary component peaks at Tc-inter(J). Films of 0.2-0.4 microns, with millimeter lateral sizes, develop dendrites when submitted to Earth's field[2], what limits the critical current, J c . This contribution studies how J c is affected by field-induced granularity in thin films. 1. C. A. Duran et al., PRB 52 (1995) 75; P. Leiderer et al., PRL. 71 (1993) 2646; T.H. Johansen et al., Supercond. Sci. Technol. 14 (2001) 1. 2. W. A. Ortiz et al., Physica C 361 (2001) 267. 3. A. V. Bobyl et al., cond-mat/0201260, submitted to APL

State diagram of a perpendicular magnetic tunnel junction driven by spin transfer torque: A power dissipation approach

Energy Technology Data Exchange (ETDEWEB)

Lavanant, M. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Department of Physics, New York University, New York, NY 10003 (United States); Petit-Watelot, S. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Kent, A.D. [Department of Physics, New York University, New York, NY 10003 (United States); Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France)

2017-04-15

The state diagram of a magnetic tunnel junction with perpendicularly magnetized electrodes in the presence of spin-transfer torques is computed in a macrospin approximation using a power dissipation model. Starting from the macrospin's energy we determine the stability of energy extremum in terms of power received and dissipated, allowing the consideration of non-conservative torques associated with spin transfer and damping. The results are shown to be in agreement with those obtained by direct integration of the Landau-Lifshitz-Gilbert-Slonczewski equation. However, the power dissipation model approach is faster and shows the reason certain magnetic states are stable, such as states that are energy maxima but are stabilized by spin transfer torque. Breaking the axial system, such as by a tilted applied field or tilted anisotropy, is shown to dramatically affect the state diagrams. Finally, the influence of a higher order uniaxial anisotropy that can stabilize a canted magnetization state is considered and the results are compared to experimental data. - Highlights: • Methods to compute state Diagram (Voltage Versus Field) for perpendicular Magnetic Tunnel Junctions. • Comparison between the conventional LLG model and a model based on Power dissipation to study magnetization reversal in magnetic tunnel junction.

Columnar grain growth of FePt(L10) thin films

International Nuclear Information System (INIS)

Yang En; Ho Hoan; Laughlin, David E.; Zhu Jiangang

2012-01-01

An experimental approach for obtaining perpendicular FePt-SiOx thin films with a large height to diameter ratio FePt(L1 0 ) columnar grains is presented in this work. The microstructure for FePt-SiOx composite thin films as a function of oxide volume fraction, substrate temperature, and film thickness is studied by plan view and cross section TEM. The relations between processing, microstructure, epitaxial texture, and magnetic properties are discussed. By tuning the thickness of the magnetic layer and the volume fraction of oxide in the film at a sputtering temperature of 410 deg. C, a 16 nm thick perpendicular FePt film with ∼8 nm diameter of FePt grains was obtained. The height to diameter ratio of the FePt grains was as large as 2. Ordering at lower temperature can be achieved by introducing a Ag sacrificial layer.

Magnetic field pitch angle and perpendicular velocity measurements from multi-point time-delay estimation of poloidal correlation reflectometry

Science.gov (United States)

Prisiazhniuk, D.; Krämer-Flecken, A.; Conway, G. D.; Happel, T.; Lebschy, A.; Manz, P.; Nikolaeva, V.; Stroth, U.; the ASDEX Upgrade Team

2017-02-01

In fusion machines, turbulent eddies are expected to be aligned with the direction of the magnetic field lines and to propagate in the perpendicular direction. Time delay measurements of density fluctuations can be used to calculate the magnetic field pitch angle α and perpendicular velocity {{v}\\bot} profiles. The method is applied to poloidal correlation reflectometry installed at ASDEX Upgrade and TEXTOR, which measure density fluctuations from poloidally and toroidally separated antennas. Validation of the method is achieved by comparing the perpendicular velocity (composed of the E× B drift and the phase velocity of turbulence {{v}\\bot}={{v}E× B}+{{v}\\text{ph}} ) with Doppler reflectometry measurements and with neoclassical {{v}E× B} calculations. An important condition for the application of the method is the presence of turbulence with a sufficiently long decorrelation time. It is shown that at the shear layer the decorrelation time is reduced, limiting the application of the method. The magnetic field pitch angle measured by this method shows the expected dependence on the magnetic field, plasma current and radial position. The profile of the pitch angle reproduces the expected shape and values. However, comparison with the equilibrium reconstruction code cliste suggests an additional inclination of turbulent eddies at the pedestal position (2-3°). This additional angle decreases towards the core and at the edge.

Tilted magnetization of a La0.7Sr0.3MnO3/LaAlO3 (001) thin film

International Nuclear Information System (INIS)

Liebmann, M.; Kaiser, U.; Schwarz, A.; Wiesendanger, R.; Pi, U.H.; Noh, T.W.; Khim, Z.G.; Kim, D.-W.

2004-01-01

A La 0.7 Sr 0.3 MnO 3 thin film epitaxially grown on a LaAlO 3 (001) substrate by pulsed laser deposition has been investigated by means of low-temperature magnetic force microscopy under high stability conditions. The ferromagnetic film exhibits a stress-induced perpendicular easy axis of magnetization. The domain structure was imaged at zero field after (i) thermal demagnetization, (ii) saturation in an in-plane field and (iii) saturation in an out-of-plane magnetic field, respectively. Stripe domains were observed in all cases, however, contrast and domain width are increased after out-of-plane saturation while alignment of stripe domains in field direction occurs after in-plane saturation. A quantitative analysis of the image contrast suggests a variable in-plane component of the magnetization, dependent on the magnetic history of the sample. Calculations of domain width and contrast from the relevant energy contributions are compared with experimental results

Spin dynamics and frequency dependence of magnetic damping study in soft ferromagnetic FeTaC film with a stripe domain structure

Energy Technology Data Exchange (ETDEWEB)

Samantaray, B., E-mail: iitg.biswanath@gmail.com; Ranganathan, R.; Mandal, P. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Calcutta 700 064 (India); Singh, Akhilesh K.; Perumal, A. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati - 781039 (India)

2015-06-15

Perpendicular magnetic anisotropy (PMA) and low magnetic damping are the key factors for the free layer magnetization switching by spin transfer torque technique in magnetic tunnel junction devices. The magnetization precessional dynamics in soft ferromagnetic FeTaC thin film with a stripe domain structure was explored in broad band frequency range by employing micro-strip ferromagnetic resonance technique. The polar angle variation of resonance field and linewidth at different frequencies have been analyzed numerically using Landau-Lifshitz-Gilbert equation by taking into account the total free energy density of the film. The numerically estimated parameters Landé g-factor, PMA constant, and effective magnetization are found to be 2.1, 2 × 10{sup 5} erg/cm{sup 3} and 7145 Oe, respectively. The frequency dependence of Gilbert damping parameter (α) is evaluated by considering both intrinsic and extrinsic effects into the total linewidth analysis. The value of α is found to be 0.006 at 10 GHz and it increases monotonically with decreasing precessional frequency.

High Field Linear Magnetoresistance Sensors with Perpendicular Anisotropy L10-FePt Reference Layer

Directory of Open Access Journals (Sweden)

X. Liu

2016-01-01

Full Text Available High field linear magnetoresistance is an important feature for magnetic sensors applied in magnetic levitating train and high field positioning measurements. Here, we investigate linear magnetoresistance in Pt/FePt/ZnO/Fe/Pt multilayer magnetic sensor, where FePt and Fe ferromagnetic layers exhibit out-of-plane and in-plane magnetic anisotropy, respectively. Perpendicular anisotropy L10-FePt reference layer with large coercivity and high squareness ratio was obtained by in situ substrate heating. Linear magnetoresistance is observed in this sensor in a large range between +5 kOe and −5 kOe with the current parallel to the film plane. This L10-FePt based sensor is significant for the expansion of linear range and the simplification of preparation for future high field magnetic sensors.

Low-field magnetoresistance anisotropy in strained ultrathin Pr0.67Sr0.33MnO3 films

International Nuclear Information System (INIS)

Wang, H.S.; Li, Q.

1999-01-01

The authors have studied the anisotropic low-field magnetoresistance (LFMR) in ultrathin Pr 0.67 sr 0.33 MnO 3 (PSMO) films epitaxially grown on LaAlO 3 (LAO), STiO 3 (STO), and NdGaO 3 (NGO) substrates which impose compressive, tensile, and nearly-zero strains in the films. The compressively-strained films show a very large negative LFMR in a perpendicular magnetic field and a much smaller MR in a parallel field, while the tensile-strain films show positive LFMR in a perpendicular field and negative MR in a parallel field. The results are interpreted based on the strain-induced magnetic anisotropy

Magnetic and thermal properties of amorphous TbFeCo alloy films

Energy Technology Data Exchange (ETDEWEB)

Wang, Ke, E-mail: K.Wang@hqu.edu.cn; Dong, Shuo; Huang, Ya; Qiu, Yuzhen

2017-07-15

Highlights: • Significant increase in magnetization is observed in TbFeCo upon crystallization. • The crystallization temperature is determined in the range between 400 and 450 °C. • The activation barriers for structural changes are obtained successfully. • Better thermal stability against crystallization and oxidation is demonstrated in FeCo-rich sample than Tb-rich type. - Abstract: Amorphous TbFeCo material with perpendicular magnetic anisotropy is currently attracting more attention for potential applications in spintronic devices and logic memories. We systematically investigate magnetic, structural, thermal, optical and electrical properties of TbFeCo alloy films. It shows out-of-plane easy axis of the films turns into in-plane orientation after annealing. Significant increase in saturation magnetization in the temperature range between 400 and 450 °C is revealed by thermomagnetic measurements. The occurrence of crystallization and oxidation at high temperatures is confirmed by X-ray diffraction measurements. Pronounced changes in optical reflectance and sheet resistance are observed with temperature, in line with structural relaxation and change. The activation barriers for crystallization and oxidation are determined to be 1.01 eV and 0.83 eV, respectively, for FeCo-rich and Tb-rich samples. Better thermal stability against crystallization and oxidation is demonstrated in the FeCo-rich sample than the Tb-rich type. Our results provide some useful information for the alloy used in device fabrication.

Two-dimensional superconducting state of monolayer Pb films grown on GaAs(110) in a strong parallel magnetic field.

Science.gov (United States)

Sekihara, Takayuki; Masutomi, Ryuichi; Okamoto, Tohru

2013-08-02

Two-dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular-magnetic-field dependence of the sheet resistance is almost independent of the presence of the parallel field component. These results are explained in terms of an inhomogeneous superconducting state predicted for 2D metals with a large Rashba spin splitting.

Imaging of topological magnetic pinning in superconductor-ferrimagnet bilayer with scanning Hall microscopy

International Nuclear Information System (INIS)

Marchevsky, M; Higgins, M J; Bhattacharya, S; Fratello, V J

2011-01-01

In a superconducting film deposited on ferromagnetic substrate with perpendicular magnetic anisotropy, vortex matter is confined by the magnetic potential landscape. Using scanning Hall microscopy we visualize flux accumulation and removal in a superconductor-ferrimagnet (S/F) bilayer prepared by rf sputtering of thin niobium film on bismuth-doped rare-earth iron garnet. Penetration of the perpendicular magnetic field in the S/F bilayer follows magnetic domain boundaries and is laterally guided by the garnet magnetization component along the field direction. Upon field removal, localization of the remnant flux at the disclination points of the labyrinthine domain pattern is observed. Our experiments show evidence for strong vortex pinning due the special topology of the domain pattern. Ac magnetic imaging of the transport current distribution in the bilayer reveals complex flow paths commensurate with the magnetic domain boundaries. Topological magnetic pinning can be a useful tool for enhancement and control of critical current in thin film superconductors.

Imaging of topological magnetic pinning in superconductor-ferrimagnet bilayer with scanning Hall microscopy

Energy Technology Data Exchange (ETDEWEB)

Marchevsky, M [Department of Physics, Syracuse University, Syracuse, NY 12344 (United States); Higgins, M J [Princeton High School, Princeton, NJ 08540 (United States); Bhattacharya, S [Tata Institute of Fundamental Research, Mumbai 400 005 (India); Fratello, V J, E-mail: mmartchevskii@lbl.gov [Integrated Photonics, Inc., Hillsborough, NJ 08844 (United States)

2011-02-15

In a superconducting film deposited on ferromagnetic substrate with perpendicular magnetic anisotropy, vortex matter is confined by the magnetic potential landscape. Using scanning Hall microscopy we visualize flux accumulation and removal in a superconductor-ferrimagnet (S/F) bilayer prepared by rf sputtering of thin niobium film on bismuth-doped rare-earth iron garnet. Penetration of the perpendicular magnetic field in the S/F bilayer follows magnetic domain boundaries and is laterally guided by the garnet magnetization component along the field direction. Upon field removal, localization of the remnant flux at the disclination points of the labyrinthine domain pattern is observed. Our experiments show evidence for strong vortex pinning due the special topology of the domain pattern. Ac magnetic imaging of the transport current distribution in the bilayer reveals complex flow paths commensurate with the magnetic domain boundaries. Topological magnetic pinning can be a useful tool for enhancement and control of critical current in thin film superconductors.

Controllable Interfacial Coupling Effects on the Magnetic Dynamic Properties of Perpendicular [Co/Ni]5/Cu/TbCo Composite Thin Films.

Science.gov (United States)

Tang, Minghong; Zhao, Bingcheng; Zhu, Weihua; Zhu, Zhendong; Jin, Q Y; Zhang, Zongzhi

2018-02-07

Dynamic magnetic properties in perpendicularly exchange-coupled [Co/Ni] 5 /Cu (t Cu = 0-2 nm)/TbCo structures show strong dependences on the interfacial antiferromagnetic strength J ex , which is controlled by the Cu interlayer thickness. The precession frequency f and effective damping constant α eff of a [Co/Ni] 5 multilayer differ distinctly for parallel (P) and antiparallel (AP) magnetization orientation states. For samples with a thin t Cu , f of the AP state is apparently higher, whereas α eff is lower than that in the P state, owing to the unidirectional exchange bias effect (H EB ) from the TbCo layer. The differences in f and α eff between the two states gradually decrease with increasing t Cu . By using a uniform precession model including an additional H EB term, the field-dependent frequency curves can be well-fitted, and the fitted H EB value is in good agreement with the experimental data. Moreover, the saturation damping constant α 0 displays a nearly linear correlation with J ex . It decreases significantly with J ex and eventually approaches a constant value of 0.027 at t Cu = 2 nm where J ex vanishes. These results provide a better understanding and effective control of magnetization dynamics in exchange-coupled composite structures for spintronic applications.

First-principles investigation of the very large perpendicular magnetic anisotropy at Fe | MgO and Co | MgO interfaces

KAUST Repository

Yang, H. X.; Chshiev, M.; Dieny, B.; Lee, J. H.; Manchon, Aurelien; Shin, K. H.

2011-01-01

The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides was investigated via first-principles calculations. In this work very large values of PMA, up to 3 erg/cm2, at Fe|MgO interfaces are reported, in agreement with recent experiments. The origin of PMA is attributed to overlap between O-pz and transition metal dz2 orbitals hybridized with dxz(yz) orbitals with stronger spin-orbit coupling-induced splitting around the Fermi level for perpendicular magnetization orientation. Furthermore, it is shown that the PMA value weakens in the case of over- or underoxidation due to the fact that oxygen pz and transition metal dz2 orbital overlap is strongly affected by disorder, in agreement with experimental observations in magnetic tunnel junctions.

First-principles investigation of the very large perpendicular magnetic anisotropy at Fe | MgO and Co | MgO interfaces

KAUST Repository

Yang, H. X.

2011-08-01

The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides was investigated via first-principles calculations. In this work very large values of PMA, up to 3 erg/cm2, at Fe|MgO interfaces are reported, in agreement with recent experiments. The origin of PMA is attributed to overlap between O-pz and transition metal dz2 orbitals hybridized with dxz(yz) orbitals with stronger spin-orbit coupling-induced splitting around the Fermi level for perpendicular magnetization orientation. Furthermore, it is shown that the PMA value weakens in the case of over- or underoxidation due to the fact that oxygen pz and transition metal dz2 orbital overlap is strongly affected by disorder, in agreement with experimental observations in magnetic tunnel junctions.

High-frequency parameters of magnetic films showing magnetization dispersion

International Nuclear Information System (INIS)

Sidorenkov, V.V.; Zimin, A.B.; Kornev, Yu.V.

1988-01-01

Magnetization dispersion leads to skewed resonance curves shifted towards higher magnetizing fields, together with considerable reduction in the resonant absorption, while the FMR line width is considerably increased. These effects increase considerably with frequency, in contrast to films showing magnetic-anisotropy dispersion, where they decrease. It is concluded that there may be anomalies in the frequency dependence of the resonance parameters for polycrystalline magnetic films

Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctions

International Nuclear Information System (INIS)

Bai, Zhaoqiang; Wu, Qingyun; Zeng, Minggang; Feng, Yuan Ping; Shen, Lei; Cai, Yongqing; Han, Guchang

2014-01-01

Employing density functional theory combined with the non-equilibrium Green's function formalism, we systematically investigate the structural, magnetic and magnetoelectric properties of the Co 2 FeAl(CFA)/MgO interface, as well as the spin-dependent transport characteristics of the CFA/MgO/CFA perpendicular magnetic tunnel junctions (p-MTJs). We find that the structure of the CFA/MgO interface with the oxygen-top FeAl termination has high thermal stability, which is protected by the thermodynamic equilibrium limit. Furthermore, this structure is found to have perpendicular magnetocrystalline anisotropy (MCA). Giant electric-field-assisted modifications of this interfacial MCA through magnetoelectric coupling are demonstrated with an MCA coefficient of up to 10 −7 erg V −1 cm. In addition, our non-collinear spin transport calculations of the CFA/MgO/CFA p-MTJ predict a good magnetoresistance performance of the device. (paper)

Analysis of microstructures for Co/Pd multilayer perpendicular magnetic recording media with carbon underlayer

International Nuclear Information System (INIS)

Asahi, T.; Kuramochi, K.; Kawaji, J.; Onoue, T.; Osaka, T.; Saigo, M.

2001-01-01

The effect of amorphous carbon underlayer thickness on the microstructure of the Co/Pd multilayer perpendicular magnetic recording media was investigated. From the magnetic force microscopy observation in the AC-demagnetized state of the Co/Pd multilayer media, the magnetic cluster size was observed to effectively decrease with an increase in carbon underlayer thickness, where the higher coercivity and the higher S/N ratio of the Co/Pd multilayer media were obtained with the thicker underlayer. Furthermore, the distribution of [1 1 1] orientation of FCC-Pd became broader, and the grain size decreased with an increase in the carbon underlayer thickness. These effects caused the magnetic exchange decoupling of Co/Pd multilayer media. We suggested that the change of microstructure was directly related to the surface roughness of the amorphous carbon underlayer

Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

Science.gov (United States)

Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

2018-05-01

Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

Effect of Grafting Density of Random Copolymer Brushes on Perpendicular Alignment in PS-b-PMMA Thin Films

KAUST Repository

Lee, Wooseop; Park, Sungmin; Kim, Yeongsik; Sethuraman, Vaidyanathan; Rebello, Nathan; Ganesan, Venkat; Ryu, Du Yeol

2017-01-01

We modulated the grafting density (σ) of a random copolymer brush of poly(styrene-r-methyl methacrylate) on substrates to probe its effect on the formation of perpendicularly aligned lamellae of polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA). Supported by coarse-grained simulation results, we hypothesized that an increase in σ will allow us to systematically tune the block copolymer interfacial interactions with the substrates from being preferential to one of the blocks to being neutral toward both blocks and will thereby facilitate enhanced regimes of perpendicularly aligned lamellae. We verified such a hypothesis by using a simple grafting-to approach to modify the substrates and characterized the thickness window for perpendicular lamellae as a function of brush thickness (or σ) on the grafted substrates using scanning force microscopy (SFM) images and grazing incidence small-angle X-ray scattering (GISAXS) measurements. The experimental results validated our hypothesis and suggested that the σ of random copolymer brushes can be used as an additional versatile parameter to modulate the interfacial interactions and the resulting alignment of block copolymer films.

Effect of Grafting Density of Random Copolymer Brushes on Perpendicular Alignment in PS-b-PMMA Thin Films

KAUST Repository

Lee, Wooseop

2017-07-18

We modulated the grafting density (σ) of a random copolymer brush of poly(styrene-r-methyl methacrylate) on substrates to probe its effect on the formation of perpendicularly aligned lamellae of polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA). Supported by coarse-grained simulation results, we hypothesized that an increase in σ will allow us to systematically tune the block copolymer interfacial interactions with the substrates from being preferential to one of the blocks to being neutral toward both blocks and will thereby facilitate enhanced regimes of perpendicularly aligned lamellae. We verified such a hypothesis by using a simple grafting-to approach to modify the substrates and characterized the thickness window for perpendicular lamellae as a function of brush thickness (or σ) on the grafted substrates using scanning force microscopy (SFM) images and grazing incidence small-angle X-ray scattering (GISAXS) measurements. The experimental results validated our hypothesis and suggested that the σ of random copolymer brushes can be used as an additional versatile parameter to modulate the interfacial interactions and the resulting alignment of block copolymer films.

Laser-driven, magnetized quasi-perpendicular collisionless shocks on the Large Plasma Device

International Nuclear Information System (INIS)

Schaeffer, D. B.; Everson, E. T.; Bondarenko, A. S.; Clark, S. E.; Constantin, C. G.; Vincena, S.; Van Compernolle, B.; Tripathi, S. K. P.; Gekelman, W.; Niemann, C.; Winske, D.

2014-01-01

The interaction of a laser-driven super-Alfvénic magnetic piston with a large, preformed magnetized ambient plasma has been studied by utilizing a unique experimental platform that couples the Raptor kJ-class laser system [Niemann et al., J. Instrum. 7, P03010 (2012)] to the Large Plasma Device [Gekelman et al., Rev. Sci. Instrum. 62, 2875 (1991)] at the University of California, Los Angeles. This platform provides experimental conditions of relevance to space and astrophysical magnetic collisionless shocks and, in particular, allows a detailed study of the microphysics of shock formation, including piston-ambient ion collisionless coupling. An overview of the platform and its capabilities is given, and recent experimental results on the coupling of energy between piston and ambient ions and the formation of collisionless shocks are presented and compared to theoretical and computational work. In particular, a magnetosonic pulse consistent with a low-Mach number collisionless shock is observed in a quasi-perpendicular geometry in both experiments and simulations

Structure and magnetic properties of Co/Pd multilayers prepared on porous nanotubular TiO{sub 2} substrate

Energy Technology Data Exchange (ETDEWEB)

Maximenko, A. [Institute of Nuclear Physics Polish Academy of Sciences, PL 31-342 Krakow (Poland); Research Institute for Nuclear Problems of Belarusian State University, Bobruiskaya str. 11, 220030 Minsk (Belarus); Marszałek, M., E-mail: marta.marszalek@ifj.edu.pl [Institute of Nuclear Physics Polish Academy of Sciences, PL 31-342 Krakow (Poland); Fedotova, J. [Research Institute for Nuclear Problems of Belarusian State University, Bobruiskaya str. 11, 220030 Minsk (Belarus); Zarzycki, A.; Zabila, Y. [Institute of Nuclear Physics Polish Academy of Sciences, PL 31-342 Krakow (Poland); Kupreeva, O.; Lazarouk, S. [Belarusian State University of Informatics and Radioelectronics, P.Brovka str. 6, 220013 Minsk (Belarus); Kasiuk, J. [Research Institute for Nuclear Problems of Belarusian State University, Bobruiskaya str. 11, 220030 Minsk (Belarus); Zavadski, S. [Belarusian State University of Informatics and Radioelectronics, P.Brovka str. 6, 220013 Minsk (Belarus)

2017-07-15

Highlights: • nanotubular templates of TiO{sub 2} were applied for fabrication of Co/Pd antidot arrays. • morphology of porous multilayers followed the features of the initial template. • the formation of Co0.4Pd0.6 alloy at the Co/Pd interface. • the conservation of perpendicular magnetic anisotropy in the CoPd porous film. • change of the magnetization reversal from domain wall motion to coherent rotation. - Abstract: We used porous nanotubular templates of TiO{sub 2} for fabrication of Co/Pd antidot arrays with strong perpendicular magnetic anisotropy. The morphology of porous multilayers followed the features of the initial template demonstrating a pronounced relief consisting of the cells with periodic pores with small inclination. We confirmed the formation of Co{sub 0.4}Pd{sub 0.6} alloy at the Co/Pd interface. We observed the conservation of perpendicular magnetic anisotropy in the Co/Pd porous film with coercive field H{sub C} = 2.7 kOe, enhanced with respect to the continuous film due to the pinning of magnetic moments on the nanopore edges. From angular dependence of the coercive field H{sub C} we deduced the change of the magnetization reversal mechanism from domain wall motion in the continuous film to the predominantly coherent rotation mechanism in the porous film.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr{sub 2}Se{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Esters, Marco [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Liebig, Andreas [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Ditto, Jeffrey J.; Falmbigl, Matthias [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Albrecht, Manfred [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Johnson, David C., E-mail: davej@uoregon.edu [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States)

2016-06-25

We report the low temperature synthesis of highly textured CuCr{sub 2}Se{sub 4} thin films using the modulated elemental reactant (MER) method. The structure of CuCr{sub 2}Se{sub 4} is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr{sub 2}Se{sub 4}. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the <111> axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr{sub 2}Se{sub 4} synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10{sup 6} erg cm{sup −3}; shape anisotropy: 1.07 × 10{sup 6} erg cm{sup −3}), with the easy axis lying out of plane, and a larger magnetic moment (6 μ{sub B}/f.u.) than bulk CuCr{sub 2}Se{sub 4}. - Highlights: • Crystallographically aligned, phase pure CuCr{sub 2}Se{sub 4} were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the <111> direction. • The magnetization is larger than bulk CuCr{sub 2}Se{sub 4} or other CuCr{sub 2}Se{sub 4} films made to date.

Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer

Energy Technology Data Exchange (ETDEWEB)

Koplak, O. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Talantsev, A. [Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Lu, Y.; Hamadeh, A.; Pirro, P.; Hauet, T. [Institut Jean Lamour, UMR 7198 CNRS, Université de Lorraine (France); Morgunov, R., E-mail: morgunov2005@yandex.ru [Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Tambov State Technical University, 392000 Tambov (Russian Federation); Mangin, S. [Institut Jean Lamour, UMR 7198 CNRS, Université de Lorraine (France)

2017-07-01

Highlights: • Anisotropy, Zeeman and exchange energy determine sequence of magnetic transitions. • Three temperature ranges manifest different shapes of the hysteresis loop. • The critical transition fields are temperature dependent. - Abstract: Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong perpendicular anisotropy have been systematically studied. Magnetization versus field hysteresis loop has been measured for different temperature ranging from 5 to 300 K. The applied field – temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer’s magnetization reversal, interlayer exchange coupling, and Zeeman energy.

Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer

International Nuclear Information System (INIS)

Koplak, O.; Talantsev, A.; Lu, Y.; Hamadeh, A.; Pirro, P.; Hauet, T.; Morgunov, R.; Mangin, S.

2017-01-01

Highlights: • Anisotropy, Zeeman and exchange energy determine sequence of magnetic transitions. • Three temperature ranges manifest different shapes of the hysteresis loop. • The critical transition fields are temperature dependent. - Abstract: Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong perpendicular anisotropy have been systematically studied. Magnetization versus field hysteresis loop has been measured for different temperature ranging from 5 to 300 K. The applied field – temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer’s magnetization reversal, interlayer exchange coupling, and Zeeman energy.

Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film.

Science.gov (United States)

Zhao, Meng-Qiang; Tian, Gui-Li; Zhang, Qiang; Huang, Jia-Qi; Nie, Jing-Qi; Wei, Fei

2012-04-07

Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications. This journal is © The Royal Society of Chemistry 2012

Temperature-induced transitions between domain structures of ultrathin magnetic films

International Nuclear Information System (INIS)

Polyakova, T.; Zablotskii, V.

2005-01-01

scenarios: i) DS adapts its period to the changing magnetic parameters; ii) conserving the initial domain period and size, DS becomes metastable. Such a metastable state can be frozen by domain wall coercivity and/or by the topological laws restricting the domain wall reconstruction (to delete or create an additional wall one should overcome an energy barrier which is proportional to σ). Reaching a critical metastability degree (temperature) the domain structure undergoes a transition to the equilibrium one and this transition is accompanied by jumps of the domain mean size and period. Temperature dependencies of the domain period as well as temperature intervals of the DSs stability in ultrathin films with perpendicular anisotropy were calculated. The work was supported by Marie Curie Fellowships for 'Transfer of Knowledge' ('NANOMAG-LAB', N 2004-003177). [1] O. Portmann, A. Vaterlaus, and D. Pescia, Nature 422, 701 (2003)

Quasi-one-dimensional intermittent flux behavior in superconducting films

DEFF Research Database (Denmark)

Qviller, A. J.; Yurchenko, V. V.; Galperin, Y. M.

2012-01-01

Intermittent filamentary dynamics of the vortex matter in superconductors is found in films of YBa2Cu3O7-δ deposited on tilted substrates. Deposition of this material on such substrates creates parallel channels of easy flux penetration when a magnetic field is applied perpendicular to the film. ...

Nd3-xBixFe4GaO12 (x = 2, 2.5 films on glass substrates prepared by MOD method

Directory of Open Access Journals (Sweden)

Yoshida T.

2014-07-01

Full Text Available We studied Nd3-XBiXFe4GaO12 films to obtain perpendicular magnetic anisotropy as well as large Faraday effect. NdBi2Fe4GaO12 (Bi2:NIGG and Nd0.5Bi2.5Fe4GaO12 (Bi2.5:NIGG films were obtained on Nd2BiFe4GaO12 (Bi1:NIGG layer prepared on glass substrates by metal-organic decomposition (MOD method. Bi2:NIGG and Bi2.5:NIGG films showed large Faraday rotation angles of 7.5 and 10.5 degree/µm, at a wavelength of 520 nm, respectively. Those films have perpendicular magnetic anisotropy with a coercivity of 350 Oe and a saturation magnetic field of 730 Oe.

Effects of intermediate layers on magnetic properties and read/write performance in CoCrPt perpendicular recording media with an FeHfN soft magnetic underlayer

International Nuclear Information System (INIS)

Hong, D.H.; Shin, J.N.; Lee, T.D.; Hong, S.Y.; Lee, H.J.

2003-01-01

In this study, the effects of CoCrPtTa and CoCrPtB magnetic intermediate layers (ILs) on the magnetic properties and read/write performance of CoCrPt/soft magnetic layer perpendicular recording media were investigated. Even though the perpendicular coercivity of the media with these ILs was reduced by 500 Oe, these media still showed a low exchange slope of 1.4 and a large negative nucleation field of about -1000 Oe. Additionally, the reduced grain size of the media with these IL was observed by transmission electron microscopy. From the read/write test, these media with ILs showed improved performance of 3-5 dB higher signal-to-noise ratio and overwrite ratio (OW) compared to the media without ILs. These enhancements could be attributed to the reduction of grain size of the magnetic layer and weakening of the intergranular interaction between grains by insertion of the IL

Coupled granular/continuous medium for thermally stable perpendicular magnetic recording

International Nuclear Information System (INIS)

Sonobe, Y.; Weller, D.; Ikeda, Y.; Takano, K.; Schabes, M.E.; Zeltzer, G.; Do, H.; Yen, B.K.; Best, M.E.

2001-01-01

We studied coupled granular/continuous (CGC) perpendicular media consisting of a continuous multilayer structure and a granular layer. The addition of Co/Pt multilayers decreased the nucleation field from 200 to -1800 Oe and increased the squareness from 0.9 to 1.0. The moment decay at room temperature was significantly reduced from -4.8% to -0.05% per decade. At elevated temperatures, strong exchange coupling between a granular layer and a continuous layer is needed for thermal stability. The exchange-coupled continuous layer reduces thermal demagnetization as it effectively increases the grain size, tightens the grain distribution, and prevents the reversal of individual grains. Magnetic Force Microscope image showed a larger magnetic cluster size for the CGC structure. Compared to the CoCr 18 Pt 12 medium, the CGC medium had 2.3 dB higher output. However, the noise for the CGC medium increased with the recording density, while the noise for the CoCr 18 Pt 12 medium remained constant from 4 to 15 kfc/mm. Further optimization and noise reduction are still required for future high density recording

Coupled granular/continuous medium for thermally stable perpendicular magnetic recording

Science.gov (United States)

Sonobe, Y.; Weller, D.; Ikeda, Y.; Takano, K.; Schabes, M. E.; Zeltzer, G.; Do, H.; Yen, B. K.; Best, M. E.

2001-10-01

We studied coupled granular/continuous (CGC) perpendicular media consisting of a continuous multilayer structure and a granular layer. The addition of Co/Pt multilayers decreased the nucleation field from 200 to -1800 Oe and increased the squareness from 0.9 to 1.0. The moment decay at room temperature was significantly reduced from -4.8% to -0.05% per decade. At elevated temperatures, strong exchange coupling between a granular layer and a continuous layer is needed for thermal stability. The exchange-coupled continuous layer reduces thermal demagnetization as it effectively increases the grain size, tightens the grain distribution, and prevents the reversal of individual grains. Magnetic Force Microscope image showed a larger magnetic cluster size for the CGC structure. Compared to the CoCr 18Pt 12 medium, the CGC medium had 2.3 dB higher output. However, the noise for the CGC medium increased with the recording density, while the noise for the CoCr 18Pt 12 medium remained constant from 4 to 15 kfc/mm. Further optimization and noise reduction are still required for future high density recording.

Ferromagnetic film on a superconducting substrate

International Nuclear Information System (INIS)

Bulaevskii, L. N.; Chudnovsky, E. M.

2001-01-01

We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M 0 on a superconducting (SC) substrate. At 4πM 0 c1 the SC is in the Meissner state and the equilibrium domain width in the film, l, scales as (l/4πλ L )=(l N /4πλ L ) 2/3 with the domain width on a normal (nonsuperconducting) substrate, l N /4πλ L >>1; λ L being the London penetration length

Read/write performance of perpendicular double-layered cylindrical media

International Nuclear Information System (INIS)

Yamada, H.; Shimatsu, T.; Watanabe, I.; Tsuchiyama, R.; Aoi, H.; Muraoka, H.; Nakamura, Y.

2005-01-01

A cylindrical magnetic storage system using perpendicular double-layered media has been developed. CoCrTa/CoZrNb deposited on a rotating cylindrical substrate shows perpendicular anisotropy and magnetic properties, which have almost the same characteristics as conventional disk-media. The fundamental read/write characteristics of perpendicular double-layered cylindrical media were measured using a single-pole-type (SPT) writer with a sliding-contact-type slider and a merged giant magneto-resistive (GMR) reader with a one-pad-type slider designed for use with cylindrical media. Preliminary studies for improving the characteristics of the recording layer are also described

Magnetization reversal of a type-II superconductor thin disk under the action of a constant magnetic field

International Nuclear Information System (INIS)

Koval'chuk, D.G.; Chornomorets', M.P.

2010-01-01

The applicability of relations obtained by Clem and Sanchez for the ac magnetic susceptibility of type-II superconductor thin films to the case where an additional constant magnetic field is applied perpendicularly to the film has been analyzed in the framework of the critical state model. The issues concerning the sample 'memory' and the influence of the magnetic field change prehistory on the current sample state have been discussed. It has been shown that the ac component of the magnetic moment and, hence, the amplitudes of ac magnetic susceptibility harmonics are established within one period of the ac magnetic field irrespective of the field prehistory.

Lack of dependence between intrinsic magnetic damping and perpendicular magnetic anisotropy in Cu(t{sub Cu})/[Ni/Co]{sub N} multilayers

Energy Technology Data Exchange (ETDEWEB)

Tang, Minghong [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Li, Wei [State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062 (China); Ren, Yang [School of Physics and Astronomy, Yunnan University, Kunming 650000 (China); Zhang, Zongzhi, E-mail: zzzhang@fudan.edu.cn [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Jin, Q.Y. [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2017-04-15

The correlation between magnetic damping and perpendicular magnetic anisotropy has been investigated in Cu(t{sub Cu})/[Ni/Co]{sub N} multilayers by time-resolved magneto-optical Kerr effect. The uniaxial magnetic anisotropy constant K{sub u} is varied in the range of 3.0–3.6 Merg/cm{sup 3} by tuning either multilayer repetition number N or Cu thickness t{sub Cu}. It is found that the PMA strength K{sub u} increases with the increase of N, while the damping constant α{sub 0} keeps nearly a constant of 0.025, implying the intrinsic damping is independent of the K{sub u} tuned by N. In contrast, as t{sub Cu} increases from 2.5 to 20 nm, the α{sub 0} value rises continuously up to 0.040, in spite of the rather weak enhancement in K{sub u} and its non-monotonic variation behavior. We consider the constant α{sub 0} with N is due to the unchanged spin-orbit coupling strength at each Co/Ni interface, while the obvious enhancement in α{sub 0} with t{sub Cu} results mainly from the increased degree of spin disordering at the rougher Cu/Ni interface. - Highlights: • The perpendicular magnetic anisotropy K{sub u} is tuned in Cu(t{sub Cu})/[Ni/Co]{sub N} system. • The intrinsic magnetic damping is found to be independent K{sub u}. • Extrinsic damping increases with t{sub Cu} due to large interfacial spin disordering.

Spin-Ice Thin Films: Large-N Theory and Monte Carlo Simulations

Science.gov (United States)

Lantagne-Hurtubise, Étienne; Rau, Jeffrey G.; Gingras, Michel J. P.

2018-04-01

We explore the physics of highly frustrated magnets in confined geometries, focusing on the Coulomb phase of pyrochlore spin ices. As a specific example, we investigate thin films of nearest-neighbor spin ice, using a combination of analytic large-N techniques and Monte Carlo simulations. In the simplest film geometry, with surfaces perpendicular to the [001] crystallographic direction, we observe pinch points in the spin-spin correlations characteristic of a two-dimensional Coulomb phase. We then consider the consequences of crystal symmetry breaking on the surfaces of the film through the inclusion of orphan bonds. We find that when these bonds are ferromagnetic, the Coulomb phase is destroyed by the presence of fluctuating surface magnetic charges, leading to a classical Z2 spin liquid. Building on this understanding, we discuss other film geometries with surfaces perpendicular to the [110] or the [111] direction. We generically predict the appearance of surface magnetic charges and discuss their implications for the physics of such films, including the possibility of an unusual Z3 classical spin liquid. Finally, we comment on open questions and promising avenues for future research.

Ferromagnetic film on a superconducting substrate

Energy Technology Data Exchange (ETDEWEB)

Bulaevskii, L. N.; Chudnovsky, E. M.

2001-01-01

We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M{sub 0} on a superconducting (SC) substrate. At 4{pi}M{sub 0}film, l, scales as (l/4{pi}{lambda}{sub L})=(l{sub N}/4{pi}{lambda}{sub L}){sup 2/3} with the domain width on a normal (nonsuperconducting) substrate, l{sub N}/4{pi}{lambda}{sub L}>>1; {lambda}{sub L} being the London penetration length.

Liquid-metal flow through a thin-walled elbow in a plane perpendicular to a uniform magnetic field

International Nuclear Information System (INIS)

Walker, J.S.

1986-04-01

This paper presents analytical solutions for the liquid-metal flow through two straight pipes connected by a smooth elbow with the same inside radius. The pipes and the elbow lie in a plane which is perpendicular to a uniform, applied magnetic field. The strength of the magnetic field is assumed to be sufficiently strong that inertial and viscous effects are negligible. This assumption is appropriate for the liquid-lithium flow in the blanket of a magnetic confinement fusion reactor, such as a tokamak. The pipes and the elbow have thin metal walls

Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

Science.gov (United States)

Yin, Li; Wang, Xiaocha; Mi, Wenbo

2018-01-01

Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.

Investigation of the magnetic phase transition in thin Fe{sub 50}Pt{sub 50-x}Rh{sub x} films by neutron diffraction

Energy Technology Data Exchange (ETDEWEB)

Fenske, Jochen; Lott, Dieter; Schreyer, Andreas [GKSS Research Centre, Geesthacht (Germany); Mankey, Gary J. [MINT Center, The University of Alabama, Tuscaloosa, AL (United States); Schmidt, Wolfgang; Schmalzl, Karin [JCNS, Juelich (Germany)

2008-07-01

In the last years perpendicular recording plays a major role in the development of novel magnetic data storage. Here, materials with high anisotropy are used which delivers good thermal stability. However in order to write the bits a high magnetic field is necessary. By the use of soft underlayers the write field can be significant reduced. Fe{sub 50}Pt{sub 50-x}Rh{sub x} is a promising candidate for such an underlayer. Magnetization measurements of the bulk samples for x=10 refer to a antiferromagnetic (AF)/ferromagnetic (FM) phase transition at about 150 K when heated. Additional magnetostriction measurements indicate that the phase transition could also be induced by applying a magnetic field. The FM state lowers the high anisotropy and therefore the high write field. The AF state helps to stabilize the recording media via exchange interaction. For technical applications the use of thin films are essential to save space and costs for the next generation of magnetic storage devices. Here we present results on several thin Fe{sub 50}Pt{sub 50-x}Rh{sub x} films with different concentration of Rh. The films were examined by polarized and unpolarized neutron diffraction in dependence of temperature and magnetic field.

The transition from longitudinal to perpendicular recording

International Nuclear Information System (INIS)

Richter, H J

2007-01-01

After more than 30 years of research, hard disk drives using perpendicular recording are finally commercially available. This review is a follow-up of a review written in 1999 and addresses the basic physics of perpendicular recording with special emphasis on the read and the write process and the magnetic aspects of the recording media. The paper also surveys various technical difficulties which prevented an earlier implementation of perpendicular recording. The paper closes with a short overview of alternative technologies that allow even higher storage densities. (topical review)

Soft Magnetic Multilayered Thin Films for HF Applications

Science.gov (United States)

Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.

Hysteresis of critical currents of superconducting bridges in low perpendicular magnetic fields

International Nuclear Information System (INIS)

Aomine, T.; Tanaka, E.; Yamasaki, S.; Tani, K.; Yonekura, A.

1989-01-01

Hysteresis of critical currents I c of superconducting bridges with In, Nb, and NbN has been studied in low perpendicular magnetic fields. Influences of bridge geometry, small field sweep, trapped flux, and bombardment of argon ions on the hysteresis were made clear. The experimental results suggest that the edge pinning and trapped flux in the bank of bridges are associated with the hysteresis. The peak value of I c of NbN bridges, as well as granular Al and In bridges reported before, in decreasing fields agrees with the calculated pair-breaking current. The origin of the hysteresis is discussed

A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

Directory of Open Access Journals (Sweden)

Hyein Lim

2013-01-01

Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

Flexible magnetic thin films and devices

Science.gov (United States)

Sheng, Ping; Wang, Baomin; Li, Runwei

2018-01-01

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

The Role of Annealing Temperature on Structural and Magnetic Properties of NdFeB Thin Films

Directory of Open Access Journals (Sweden)

A. Khanjani

2016-06-01

Full Text Available In the present research NdFeB thin films coupled with buffer and capping layer of W were formed on Si/SiO2 substrate by means of RF magnetron sputtering. The system was annealed at vaccum at different temperatures of 450, 500, 550,. 600 and 650 °C Phase analysis was carried out by XRD and it was found that NdFeB was formed without the formation of any kind of secondary phase. The cross sectional and grain size of the thin films were measured by scanning electron microscopy. Morphological studies were performed by atomic force microscopy. Magnetic properties of thin films including coercivity, saturation of magnetization and hysteresis area were evcaluated by vibrating sample magnetometer. It was found that by annealing at 400 °C the amorphous layer was formed.The highest intensity of peaks was formed at 550 °C and with an increase in temperature the intensity was declined. The grain size was increased by temperature and had an impact on the coercivity. With an increase of temperature up to 600 °C, perpendicular coercivity was increased and then by further increase of temperatute, coercivity was reduced. Based on the obtained data the temperature of 600 °C was selected as the optimum annealing temperature for reaching enhanced structural and magnetic feature.

Electric-field induced spin accumulation in the Landau level states of topological insulator thin films

Science.gov (United States)

Siu, Zhuo Bin; Chowdhury, Debashree; Basu, Banasri; Jalil, Mansoor B. A.

2017-08-01

A topological insulator (TI) thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to one other across the finite thickness. An out-of-plane magnetic field leads to the formation of discrete Landau level states in the system, whereas an in-plane magnetization breaks the angular momentum symmetry of the system. In this work, we study the spin accumulation induced by the application of an in-plane electric field to the TI thin film system where the Landau level states and inter-surface coupling are simultaneously present. We show, via Kubo formula calculations, that the in-plane spin accumulation perpendicular to the magnetization due to the electric field vanishes for a TI thin film with symmetric top and bottom surfaces. A finite in-plane spin accumulation perpendicular to both the electric field and magnetization emerges upon applying either a differential magnetization coupling or a potential difference between the two film surfaces. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the k-space equal-energy contours.

Determination of magnetic properties of multilayer metallic thin films

International Nuclear Information System (INIS)

Birlikseven, C.

2000-01-01

In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

Science.gov (United States)

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; Huang, S.; Kato, H.; Bi, C.; Xu, M.; LeRoy, B. J.; Wang, W. G.

2018-02-01

Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

Magnetic characterisation of longitudinal thin film media

International Nuclear Information System (INIS)

Dova, P.

1998-09-01

Magnetic characterisation techniques, as applied to longitudinal thin film media, have been investigated. These included the study of the differentials of the remanence curves, the delta-M plot and the examination of the critical volumes. Several thin film structures, which are currently used or are being considered for future media applications, have been examined using these techniques. Most of the films were Co-alloys with the exception of a set of Barium ferrite films. Both monolayer and multilayer structures were studied. It was found that the study of activation volumes provides a better insight into the reversal mechanisms of magnetic media, especially in the case of complex structures such as multilayer films and films with bicrystal microstructure. Furthermore, an evaluation study of different methods of determining critical volumes showed that the method using time dependence measurements and the micromagnetic approach is the most appropriate. The magnetic characteristics of the thin film media under investigation were correlated with their microstructure and, where possible, with their noise performance. Magnetic force microscopy was also used for acquiring quasi-domain images in the ac-demagnetised state. It was found that in all Co-alloy films the dominant intergranular coupling is magnetising in nature, the level of which is governed by the Cr content in the magnetic layer. In the case of laminated media it was found that when non-magnetic spacers are used, the nature of the interlayer coupling depends on the spacer thickness. In double layer structures with no spacer, the top layer replicates the crystallographic texture of the bottom layer, and the overall film properties are a combination of the two layers. In bicrystal films the coupling is determined by the Cr segregation in the grain boundaries. Furthermore, the presence of stacking faults in bicrystal films deteriorates their thermal stability, but can be prevented by improving the epitaxial

Annealing and thickness effects on magnetic properties of Co2FeAl alloy films

Science.gov (United States)

Wang, Ke; Xu, Zhan; Ling, Fujin; Wang, Yahong; Dong, Shuo

2018-03-01

Co2FeAl (CFA) films in a wide thickness range between 2 and 100 nm are sputtered at room temperature. Perpendicular magnetic anisotropy (PMA) is achieved in the annealed structure of Pd/CFA/MgO with CFA thickness ranging between 2.3 and 4.9 nm. PMA as high as 2 × 106 erg/cm3 is demonstrated in the structures annealed in the temperature range between 300 and 350 °C. Positive contributions to the PMA made by the interfaces of Pd/CFA and CFA/MgO are identified. For the as-deposited structure of MgO/CFA/Ta with thick CFA alloy up to 5 nm or above a high effective saturation magnetization of 983.9 ± 30.1 emu/cc is derived from the fitting and an in-plane uniaxial magnetic anisotropy of 104 erg/cm3 in magnitude is revealed by angular dependent magnetic measurements. In addition to the increase in saturation magnetization, a fourfold cubic magnetic anisotropy is found to develop with annealing, in line with the improvement of the crystalline structure confirmed by X-ray diffraction measurements. Out results provide some useful information for the design of the CFA-based magnetoelectronic devices.

Magnetic after-effect in manganite films

International Nuclear Information System (INIS)

Sirena, M.; Steren, L.B.; Guimpel, J.

2001-01-01

The time dependence of the magnetic and transport properties on La 0.6 Sr 0.4 MnO 3 films and bulk samples has been studied through magnetization and resistivity measurements. A magnetic after-effect has been observed in all samples. At low temperatures, the low-field magnetization, can be described by the function M(t)=M c +M d exp(-t/τ)+S(H,T)ln(t). The resistivity increases logarithmically in the same temperature range, indicating the evolution of the sample to a more disordered state. Above a characteristic temperature, this behaviour is reversed and an increase of the magnetization with time is observed. The relaxation parameters depend on the bulk or films character of the samples. In the latter case, a dependence on the film thickness was found. A direct correlation between the time dependence of the resistivity and magnetization curves in manganite compounds was found

Momentum transfer resolved memory in a magnetic system with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Seu, Keoki; Roy, Sujoy; Su, Run; Parks, Daniel; Shipton, Erik; Fullerton, Eric; Kevan, Stephen

2011-01-28

We have used resonant, coherent soft x-ray scattering to measure wave vector re- solved magnetic domain memory in Co/Pd multilayers. The technique uses angular cross correlation functions and can be applied to any system with circular annuli of constant values of scattering wave vector q. In our Co/Pd film, the memory exhibits a maximum at q = 0.0384 nm-1 near initial reversal that decreases in magnitude as the magnetization is further reversed. The peak is attributed to bubble domains that nucleate reproducibly near initial reversal and which grow into a labyrinth domain structure that is not reproduced from one magnetization cycle to the next.

Aspects of 'low field' magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

International Nuclear Information System (INIS)

Moran, O.; Saldarriaga, W.; Baca, E.

2007-01-01

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO 3 were grown on an (001) SrTiO 3 (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (001) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [100] S and [001] S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [001]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ 0 H=9T; T)-ρ( μ 0 H=0T; T)]/ρ( μ 0 H=0T; T) on the order of a few percent, with maximums of ∼6% and ∼4% (right at the Curie temperature, T C ∼160K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T 3 films grown on 2 o miscut (001) STO substrates with the current parallel to the field and parallel to the [1-bar11] direction, which was identified as the easier axis for magnetization

Exchange bias in nearly perpendicularly coupled ferromagnetic/ferromagnetic system

International Nuclear Information System (INIS)

Bu, K.M.; Kwon, H.Y.; Oh, S.W.; Won, C.

2012-01-01

Exchange bias phenomena appear not only in ferromagnetic/antiferromagnetic systems but also in ferromagnetic/ferromagnetic systems in which two layers are nearly perpendicularly coupled. We investigated the origin of the symmetry-breaking mechanism and the relationship between the exchange bias and the system's energy parameters. We compared the results of computational Monte Carlo simulations with those of theoretical model calculation. We found that the exchange bias exhibited nonlinear behaviors, including sign reversal and singularities. These complicated behaviors were caused by two distinct magnetization processes depending on the interlayer coupling strength. The exchange bias reached a maximum at the transition between the two magnetization processes. - Highlights: ► Exchange bias phenomena are found in perpendicularly coupled F/F systems. ► Exchange bias exhibits nonlinear behaviors, including sign reversal and singularities. ► These complicated behaviors were caused by two distinct magnetization processes. ► Exchange bias reached a maximum at the transition between the two magnetization processes. ► We established an equation to maximize the exchange bias in perpendicularly coupled F/F system.

Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

Directory of Open Access Journals (Sweden)

B. Fang

2015-06-01

Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

Science.gov (United States)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

The magnetohydrodynamic squeeze film

International Nuclear Information System (INIS)

Hamza, E.A.

1987-06-01

The motion of an electrically conducting fluid film squeezed between two parallel disks in the presence of a magnetic field applied perpendicular to the disks is studied. Analytic solutions through use of a regular perturbation scheme are obtained. The results show that the electromagnetic forces increase the load carrying capacity considerably. (author). 5 refs, 10 figs, 3 tabs

Magnetic after-effect in manganite films

Energy Technology Data Exchange (ETDEWEB)

Sirena, M. E-mail: sirenam@ib.cnea.gov.ar; Steren, L.B.; Guimpel, J

2001-05-01

The time dependence of the magnetic and transport properties on La{sub 0.6}Sr{sub 0.4}MnO{sub 3} films and bulk samples has been studied through magnetization and resistivity measurements. A magnetic after-effect has been observed in all samples. At low temperatures, the low-field magnetization, can be described by the function M(t)=M{sub c}+M{sub d} exp(-t/{tau})+S(H,T)ln(t). The resistivity increases logarithmically in the same temperature range, indicating the evolution of the sample to a more disordered state. Above a characteristic temperature, this behaviour is reversed and an increase of the magnetization with time is observed. The relaxation parameters depend on the bulk or films character of the samples. In the latter case, a dependence on the film thickness was found. A direct correlation between the time dependence of the resistivity and magnetization curves in manganite compounds was found.

Direct Reconstruction of Two-Dimensional Currents in Thin Films from Magnetic-Field Measurements

Science.gov (United States)

Meltzer, Alexander Y.; Levin, Eitan; Zeldov, Eli

2017-12-01

An accurate determination of microscopic transport and magnetization currents is of central importance for the study of the electric properties of low-dimensional materials and interfaces, of superconducting thin films, and of electronic devices. Current distribution is usually derived from the measurement of the perpendicular component of the magnetic field above the surface of the sample, followed by numerical inversion of the Biot-Savart law. The inversion is commonly obtained by deriving the current stream function g , which is then differentiated in order to obtain the current distribution. However, this two-step procedure requires filtering at each step and, as a result, oversmooths the solution. To avoid this oversmoothing, we develop a direct procedure for inversion of the magnetic field that avoids use of the stream function. This approach provides enhanced accuracy of current reconstruction over a wide range of noise levels. We further introduce a reflection procedure that allows for the reconstruction of currents that cross the boundaries of the measurement window. The effectiveness of our approach is demonstrated by several numerical examples.

Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

International Nuclear Information System (INIS)

Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V.; Salyuk, O.Yu.; Golub, V.O.

2015-01-01

Magnetic properties of Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 (84 nm) and Bi 2.8 Y 0.2 Fe 5 O 12 (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 /Bi 2.8 Y 0.2 Fe 5 O 12 bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction

Fabrication and characterization of nano-particulate PtCo media for ultra-high density perpendicular magnetic recording

International Nuclear Information System (INIS)

Newman, Dave M; Wears, M Lesley; Jollie, Michael; Choo, Desmond

2007-01-01

The year-on-year growth in areal recording density maintained now for half a century by the hard disk industry has required a corresponding reduction in the size of the magnetic grains comprising the storage media employed. Grain dimensions are now such that the performance of materials which thus far have served the industry well can no longer be maintained as further reduction in their volume risks breaching the superparamagnetic limit with the attendant loss of data integrity. The high magnetocrystalline anisotropy of the Ll 0 phase of PtCo allows particles as small as 4 nm diameter to remain magnetically stable in the elevated temperature environment typical of disk drive systems. A non-interacting dispersion of nanomagnetic particles suspended in an inert non-magnetic host such that each has its anisotropy axis directed perpendicular to the surface of the medium now constitutes the new ideal for a recording medium. Fabrication by a novel combination of conventional sputtering and thermal processing technologies of a medium closely approximating this ideal is demonstrated. An optimized two-stage fabrication process produces a near mono-dispersion of particles with magnetic activation volumes centred about 5 x 10 23 and crystallized in the L1 0 phase with an orientated tetragonal structure. The characteristics of this medium are discussed as a function of composition and crystalline structure. In the absence of a thermally assisted recording head, experiments are conducted on a degraded form of the medium that is shown to support perpendicular recording at linear densities in excess of 240 kfci (D50 point)

Tuning the Magnetic Anisotropy at a Molecule-Metal Interface

DEFF Research Database (Denmark)

Bairagi, K.; Bellec, A.; Repain, V.

2015-01-01

We demonstrate that a C60 overlayer enhances the perpendicular magnetic anisotropy of a Co thin film, inducing an inverse spin reorientation transition from in plane to out of plane. The driving force is the C60/Co interfacial magnetic anisotropy that we have measured quantitatively in situ...

Perpendicular magnetic anisotropy in Mo/Co2FeAl0.5Si0.5/MgO/Mo multilayers with optimal Mo buffer layer thickness

Science.gov (United States)

Saravanan, L.; Raja, M. Manivel; Prabhu, D.; Pandiyarasan, V.; Ikeda, H.; Therese, H. A.

2018-05-01

Perpendicular Magnetic Anisotropy (PMA) was realized in as-deposited Mo(10)/Co2FeAl0.5Si0.5(CFAS)(3)/MgO(0.5)/Mo multilayer stacks with large perpendicular magnetic anisotropy energy (Keff). PMA of this multilayer is found to be strongly dependent on the thickness of the individual CFAS (tCFAS), Mo (tMo) and MgO (tMgO) layers and annealing temperatures. The interactions at the Mo/CFAS/MgO interfaces are critical to induce PMA and are tuned by the interfacial oxidation. The major contribution to PMA is due to iron oxide at the CFAS/MgO interface. X-ray diffraction (XRD) and infrared spectroscopic (FT-IR) studies further ascertain this. However, an adequate oxidation of MgO and the formation of (0 2 4) and (0 1 8) planes of α-Fe2O3 at the optimal Mo buffer layer thickness is mainly inducing PMA in Mo/CFAS/MgO/Mo stack. Microstructural changes in the films are observed by atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) demonstrates the oxidation of CFAS/MgO interface and the formation of Fe-O bonds confirming that the real origin of PMA in Mo/CFAS/MgO is due to hybridization of Fe (3dz2) and O (2pz) orbitals and the resulted spin-orbit interaction at their interface. The half-metallic nature CFAS with Mo layer exhibiting PMA can be a potential candidate as p-MTJs electrodes for the new generation spintronic devices.

Upper critical magnetic field of superconducting films with magnetic impurities

International Nuclear Information System (INIS)

Lemberger, T.R.

1978-01-01

The upper critical magnetic field, H/sub c2/(T), of In-Mn and Pb-Mn alloy films was measured. H/sub c2/ was determined from the resistance of the films. The results were compared with the theory of Fulde and Maki. This theory assumes that the electron-phonon coupling is weak, and that the interaction between the impurity spins and the conduction electron spins is weak. The theory predicts that the pair-breaking effect of the magnetic impurities is temperature-independent, and that the pair-breaking effects of the magnetic impurities and the applied magnetic field are additive. Furthermore, it predicts explicitly the temperature dependence of H/sub c2/. The temperature dependence of H/sub c2/ for the In-Mn alloy films is well described by the Fulde-Maki theory, despite the moderately strong electron-phonon coupling and the strong interaction between the impurity spins and the conduction electron spins. The temperature dependence of H/sub c2/ for the Pb-Mn alloy films is not well described by the Fulde-Maki theory, probably due to the strong electron-phonon coupling in Pb. However, even without a quantitatively correct theory, one can conclude from the Pb-Mn data that the pair-breaking effect of the magnetic impurities is temperature independent, and that the pair-breaking effects of the magnetic impurities and the applied magnetic field are additive. For some of the Pb-Mn alloy films, there was a region of positive curvature in H/sub c2/(T) near the zero-field transition temperature. This positive curvature is not understood

Ferromagnetic Film on a Superconducting Substrate

OpenAIRE

Bulaevskii, L. N.; Chudnovsky, E. M.

2000-01-01

We study the equilibrium domain structure and magnetic flux around a ferromagnetic (FM) film with perpendicular magnetization M_0 on a superconducting (SC) substrate. At 4{\\pi}M_0> 1. Here \\lambda_L is the London penetration length. For 4{\\pi}M_0 > H_{c1} and l_{N} in excess of about 35 {\\lambda}_{L}, the domains are connected by SC vortices. We argue that pinning of vortices by magnetic domains in FM/SC multilayers can provide high critical currents.

Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction

Directory of Open Access Journals (Sweden)

V. B. Naik

2012-12-01

Full Text Available We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB free layer (FL on magnetic and tunneling magnetoresistance (TMR properties of a CoFeB-MgO system with perpendicular magnetic anisotropy (PMA. It is found that the critical thickness (tc to sustain PMA is doubled (tc = 2.6 nm in Ta-inserted CoFeB FL as compared to single CoFeB layer (tc = 1.3 nm. While the effective magnetic anisotropy is found to increase with Ta insertion, the saturation magnetization showed a slight reduction. As the CoFeB thickness increasing, the thermal stability of Ta inserted structure is significantly increased by a factor of 2.5 for total CoFeB thickness less than 2 nm. We have observed a reasonable value of TMR for a much thicker CoFeB FL (thickness = 2-2.6 nm with Ta insertion, and without significant increment in resistance-area product. Our results reveal that an ultra-thin Ta insertion in CoFeB might pay the way towards developing the high-density memory devices with enhanced thermal stability.

Dynamic resistance of a high-T c coated conductor wire in a perpendicular magnetic field at 77 K

Science.gov (United States)

Jiang, Zhenan; Toyomoto, Ryuki; Amemiya, Naoyuki; Zhang, Xingyou; Bumby, Chris W.

2017-03-01

Superconducting high-T c coated conductor (CC) wires comprise a ceramic thin film with a large aspect ratio. This geometry can lead to significant dissipative losses when exposed to an alternating magnetic field. Here we report experimental measurements of the ‘dynamic resistance’ of commercially available SuperPower and Fujikura CC wires in an AC perpendicular field. The onset of dynamic resistance occurs at a threshold field amplitude, which is determined by the total DC transport current and the penetration field of the conductor. We show that the field-dependence of the normalised magnetisation loss provides an unambiguous value for this threshold field at zero transport current. From this insight we then obtain an expression for the dynamic resistance in perpendicular field. This approach implies a linear relationship between dynamic resistance and applied field amplitude, and also between threshold field and transport current and this is consistent with our experimental data. The analytical expression obtained yields values that closely agree with measurements obtained across a wide range of frequencies and transport currents, and for multiple CC wires produced by different wire manufacturers and with significantly differing dimensions and critical currents. We further show that at high transport currents, the measured DC resistance includes an additional nonlinear term which is due to flux-flow resistance incurred by the DC transport current. This occurs once the field-dependent critical current of the wire falls below the DC transport current for part of each field cycle. Our results provide an effective and simple approach to calculating the dynamic resistance of a CC wire, at current and field magnitudes consistent with those expected in superconducting machines.

Magnetic anisotropy of MnAs-films on GaAs(0 0 1) studied with ferromagnetic resonance

International Nuclear Information System (INIS)

Lindner, J.; Tolinski, T.; Lenz, K.; Kosubek, E.; Wende, H.; Baberschke, K.; Ney, A.; Hesjedal, T.; Pampuch, C.; Koch, R.; Daeweritz, L.; Ploog, K.H.

2004-01-01

Thin films of MnAs grown on GaAs(0 0 1) show a self-organized structure of coexisting ferromagnetic α- and paramagnetic β-MnAs stripes in the temperature interval from 10 to 40 deg. C. We quantify the magnetic anisotropies of the α-stripes via ferromagnetic resonance and superconducting quantum interference device magnetometry for samples with thicknesses of 57 and 165 nm. The easy axis of magnetization is found to be located perpendicular to the stripe direction, whereas the direction parallel to the stripes is a hard one. While the intrinsic anisotropies show a bulk-like behavior and explain the direction of the hard axis, the key to understanding the direction of the easy axis is given by the demagnetizing fields due to the stripe formation

Magnetic neutron diffraction of MnO thin films

International Nuclear Information System (INIS)

Neubeck, W.; Vettier, C.; Mannix, D.; Bernhoeft, N.; Hiess, A.; Ranno, L.; Givord, D.

1999-01-01

We report on magnetic neutron diffraction carried out on various epitaxial MnO(III) thin films grown on sapphire and MgO substrates. In all samples, of masses between 5 and 50 μg, magnetic Bragg peaks have been observed. The films exhibit what appears to be continuous phase-transitions in contrast to the strongly discontinuous transition exhibited by bulk samples. In addition, the Neel temperature of films prepared on sapphire substrates is strongly enhanced above that of the bulk whilst that of the film grown on MgO is depressed. The possibility to measure magnetic excitations in such thin film systems is discussed in the light of promising test results obtained from an inelastic magnetic neutron scattering experiment on the IN8 spectrometer. (authors)

Magnetoresistance anisotropy of ultrathin epitaxial La0.83Sr0.17MnO3 films

Science.gov (United States)

Balevičius, Saulius; Tornau, Evaldas E.; ŽurauskienÄ--, Nerija; Stankevič, Voitech; Šimkevičius, Česlovas; TolvaišienÄ--, Sonata; PlaušinaitienÄ--, Valentina; Abrutis, Adulfas

2017-12-01

We present the study of temperature dependence of resistivity (ρ), magnetoresistance (MR), and magnetoresistance anisotropy (AMR) of thin epitaxial La0.83Sr0.17MnO3 films. The films with thickness from 4 nm to 140 nm were grown on an NdGaO3 (001) substrate by a pulsed injection metal organic chemical vapor deposition technique. We demonstrate that the resistivity of these films significantly increases and the temperature Tm of the resistivity maximum in ρ(T) dependence decreases with the decrease of film thickness. The anisotropy of ρ(T) dependence with respect to the electrical current direction along the [100] or [010] crystallographic axis of the film is found for ultrathin films (4-8 nm) at temperatures close to Tm. Both MR and AMR, measured in magnetic fields up to 0.7 T applied in the film plane parallel and perpendicular to the current direction, have shown strong dependence on the film thickness. It was also found that the anisotropy of magnetoresistance could change its sign from positive (thicker films) to negative (ultrathin films) and obtain very small values at a certain intermediate thickness (20 nm) when the current is flowing perpendicular to the easy magnetization axis [010]. While the positive AMR effect was assigned to the conventional magnetic ordering of manganites, the AMR of ultrathin films was influenced by the pinning of magnetization to the easy axis. The temperature dependence and change of the AMR sign with film thickness is shown to be well described by the two-region model (more strained closer to the film substrate and more relaxed further from it) assuming that the relative concentration of both regions changes with the film thickness. The possibility to use the effect of the AMR compensation for the development of scalar in-plane magnetic field sensors is discussed.

Influence of Temperature and Mechanical Scratch on the Recorded Magnetization Stability of Longitudinal and Perpendicular Recording Media

International Nuclear Information System (INIS)

Nagano, Katsumasa; Tobari, Kousuke; Futamoto, Masaaki

2011-01-01

Stability of recorded magnetization of hard disk drive (HDD) is influenced by external environments, such as temperature and magnetic field. Small scratches are frequently formed on HDD medium surface upon contacts with the magnetic head. The influences of temperature and mechanical scratch on the magnetization structure stability are investigated for longitudinal and perpendicular recording media by using a magnetic force microscope. PMR media remained almost unchanged up to about 300 deg. C for the area with no scratches, whereas the areas near and under mechanical scratches started to change around 250 deg. C. The magnetization structure of LMR media started to change at about 100 degrees lower temperature under mechanical scratches when compared with no scratch areas. A quantitative analysis of magnetization structure variation is carried out by measuring the recorded magnetization strength difference estimated from the MFM images observed for a same sample area before and after exposing the sample to different temperatures.

Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films

International Nuclear Information System (INIS)

Liu, Hao-Liang; Zeng, Yu-Jia; Van Haesendonck, Chris; Brems, Steven; Temst, Kristiaan; Vantomme, André

2016-01-01

The interplay between magnetocrystalline anisotropy and exchange bias is investigated in CoO/Co bilayer films, which are grown epitaxially on MgO (0 0 1), by magnetization reversal measurements based on the anisotropic magnetoresistance (AMR) effect. While an asymmetric magnetization reversal survives after training for cooling field (CF) along the hard axis, the magnetization reversal becomes symmetric and is dominated in both branches of the hysteresis loop by domain wall motion before and after training for CF along the easy axis. When performing an in-plane hysteresis loop perpendicular to the CF, the hysteresis loop along the easy axis becomes asymmetric: magnetization rotation dominates in the ascending branch, while there is a larger contribution of domain wall motion in the descending branch. Furthermore, the azimuthal angular dependence of the AMR shows two minima after performing a perpendicular hysteresis loop, instead of only one minimum after training. Relying on the extended Fulcomer and Charap model, these effects can be related to an increased deviation of the average uncompensated antiferromagnetic magnetization from the CF direction. This model provides a consistent interpretation of training and asymmetry of the magnetization reversal for epitaxial films with pronounced magnetocrystalline anisotropy as well as for the previously investigated polycrystalline films. (paper)

Nanosphere lithography applied to magnetic thin films

Science.gov (United States)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Critical unpairing currents in narrow niobium films

International Nuclear Information System (INIS)

Gershenzon, M.E.; Gubankov, V.N.

1979-01-01

Investigated are the dependences of critical currents of narrow ( with the width of W=0.5-15 μm) superconducting niobium films on temperature and a magnetic field. The proposed method of film production with the width of the 1μm order and with small edge inhomogeneities ((<=500 A) permitted to realize the Ginsburg-Landau unpairing currents in the wide range of temperatures. The correct comparison with the theory showed that the unpairing currents are observed if W(< or approximately) 2delta, where delta is the effective depth of the penetration of the perpendicular magnetic field

Spatial characterization of the edge barrier in wide superconducting films

Science.gov (United States)

Sivakov, A. G.; Turutanov, O. G.; Kolinko, A. E.; Pokhila, A. S.

2018-03-01

The current-induced destruction of superconductivity is discussed in wide superconducting thin films, whose width is greater than the magnetic field penetration depth, in weak magnetic fields. Particular attention is paid to the role of the boundary potential barrier (the Bin-Livingston barrier) in critical state formation and detection of the edge responsible for this critical state with different mutual orientations of external perpendicular magnetic field and transport current. Critical and resistive states of the film were visualized using the space-resolving low-temperature laser scanning microscopy (LTLSM) method, which enables detection of critical current-determining areas on the film edges. Based on these observations, a simple technique was developed for investigation of the critical state separately at each film edge, and for the estimation of residual magnetic fields in cryostats. The proposed method only requires recording of the current-voltage characteristics of the film in a weak magnetic field, thus circumventing the need for complex LTLSM techniques. Information thus obtained is particularly important for interpretation of studies of superconducting film single-photon light emission detectors.

The critical properties of magnetic films

International Nuclear Information System (INIS)

Saber, M.; Ainane, A.; Essaoudi, I.; Miguel, J.J. de

2010-01-01

Within the framework of the transverse spin-1/2 Ising model and by using the effective field theory with a probability distribution technique that accounts for the self spin correlations, we have studied the critical properties of an L-layer film of simple cubic symmetry in which the exchanges strength are assumed to be different from the bulk values in N S surface layers. We derive and illustrate the expressions for the phase diagrams, order parameter profiles and susceptibility. In such films, the critical temperature can shift to either lower or higher temperature compared with the corresponding bulk value. We calculate also some magnetic properties of the film, such as the layer magnetizations, their averages and their profiles and the longitudinal susceptibility of the film. The film longitudinal susceptibility still diverges at the film critical temperature as does the bulk longitudinal susceptibility.

Propagation of magnetostatic spin waves in an yttrium iron garnet film for out-of-plane magnetic fields

Science.gov (United States)

Bang, Wonbae; Lim, Jinho; Trossman, Jonathan; Tsai, C. C.; Ketterson, John B.

2018-06-01

We have observed the propagation of spin waves across a thin yttrium iron garnet film on (1 1 1) gadolinium gallium garnet for magnetic fields inclined with respect to the film plane. Two principle planes were studied: that for H in the plane defined by the wave vector k and the plane normal, n, with limiting forms corresponding to the Backward Volume and Forward Volume modes, and that for H in the plane perpendicular to k, with limiting forms corresponding to the Damon-Eshbach and Forward Volume modes. By exciting the wave at one edge of the film and observing the field dependence of the phase of the received signal at the opposing edge we determined the frequency vs. wavevector relation, ω = ω (k), of various propagating modes in the film. Avoided crossings are observed in the Damon-Eshbach and Forward Volume regimes when the propagating mode intersects the higher, exchange split, volume modes, leading to an extinction of the propagating mode; analysis of the resulting behavior allows a determination of the exchange parameter. The experimental results are compared with theoretical simulations.

Anomalous Nernst Effects of [CoSiB/Pt] Multilayer Films

OpenAIRE

Kelekci, O.; Lee, H. N.; Kim, T. W.; Noh, H.

2013-01-01

We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to 1/d^1.3, which can be c...

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

2015-07-15

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

2015-01-01

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

Science.gov (United States)

Laval, M.; Lüders, U.; Bobo, J. F.

2007-09-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant Keff and exchange-bias coupling JE, which are significantly different from the ones determined by standard switching field measurements.

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

International Nuclear Information System (INIS)

Laval, M.; Lueders, U.; Bobo, J.F.

2007-01-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant K eff and exchange-bias coupling J E , which are significantly different from the ones determined by standard switching field measurements

Enhancement in the interfacial perpendicular magnetic anisotropy and the voltage-controlled magnetic anisotropy by heavy metal doping at the Fe/MgO interface

Directory of Open Access Journals (Sweden)

Takayuki Nozaki

2018-02-01

Full Text Available We investigated the influence of heavy metal doping at the Fe/MgO interface on the interfacial perpendicular magnetic anisotropy (PMA and the voltage-controlled magnetic anisotropy (VCMA in magnetic tunnel junctions prepared by sputtering-based deposition. The interfacial PMA was increased by tungsten doping and a maximum intrinsic interfacial PMA energy, Ki,0 of 2.0 mJ/m2 was obtained. Ir doping led to a large increase in the VCMA coefficient by a factor of 4.7 compared with that for the standard Fe/MgO interface. The developed technique provides an effective approach to enhancing the interfacial PMA and VCMA properties in the development of voltage-controlled spintronic devices.

Effect of flattened surface morphology of anodized aluminum oxide templates on the magnetic properties of nanoporous Co/Pt and Co/Pd thin multilayered films

Science.gov (United States)

Nguyen, T. N. Anh; Fedotova, J.; Kasiuk, J.; Bayev, V.; Kupreeva, O.; Lazarouk, S.; Manh, D. H.; Vu, D. L.; Chung, S.; Åkerman, J.; Altynov, V.; Maximenko, A.

2018-01-01

For the first time, nanoporous Al2O3 templates with smoothed surface relief characterized by flattened interpore areas were used in the fabrication of Co/Pd and Co/Pt multilayers (MLs) with strong perpendicular magnetic anisotropy (PMA). Alternating gradient magnetometry (AGM) revealed perfectly conserved PMA in the Co/Pd and Co/Pt porous MLs (antidot arrays) with a ratio of remanent magnetization (Mr) to saturation magnetization (MS) of about 0.99, anisotropy fields (Ha) of up to 2.6 kOe, and a small deviation angle of 8° between the easy magnetization axis and the normal to the film surface. The sufficient magnetic hardening of the porous MLs with enhanced coercive field HC of up to ∼1.9 kOe for Co/Pd and ∼1.5 kOe for Co/Pt MLs, as compared to the continuous reference samples (∼1.5-2 times), is associated with the pinning of the magnetic moments on the nanopore edges. Application of the Stoner-Wohlfarth model for fitting the experimental M/MS(H) curves yielded clear evidence of the predominantly coherent rotation mechanism of magnetization reversal in the porous films.

Magnetic surfaces, thin films, and multilayers

International Nuclear Information System (INIS)

Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

1992-01-01

This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

The role of MFM signal in mark size measurement in probe-based magnetic recording on CoNi/Pt multilayers

NARCIS (Netherlands)

Zhang, Li; Bain, James A.; Zhu, Jian-Gang; Abelmann, Leon; Onoue, T.

2007-01-01

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. Magnetic marks were formed by a scanning tunneling microscopy (STM)-based thermal magnetic mechanism on a perpendicular CoNi/Pt multilayered film. Magnetic force microscopy

Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

Energy Technology Data Exchange (ETDEWEB)

Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V. [Taurida National V.I. Vernadsky University, Vernadsky Avenue, 4, 95007 Simferopol (Ukraine); Salyuk, O.Yu. [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine); Golub, V.O., E-mail: golub@imag.kiev.ua [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine)

2015-11-15

Magnetic properties of Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12} (84 nm) and Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12}/Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction.

Comparison of field swept ferromagnetic resonance methods - A case study using Ni-Mn-Sn films

Science.gov (United States)

Modak, R.; Samantaray, B.; Mandal, P.; Srinivasu, V. V.; Srinivasan, A.

2018-05-01

Ferromagnetic resonance spectroscopy is used to understand the magnetic behavior of Ni-Mn-Sn Heusler alloy film. Two popular experimental methods available for recording FMR spectra are presented here. In plane angular (φH) variation of magnetic relaxation is used to evaluate the in plane anisotropy (Ku) of the film. The out of plane (θH) variation of FMR spectra has been numerically analyzed to extract the Gilbert damping coefficient, effective magnetization and perpendicular magnetic anisotropy (K1). Magnetic homogeneity of the film had also been evaluated in terms of 2-magnon contribution from FMR linewidth. The advantage and limitations of these two popular FMR techniques are discussed on the basis of the results obtained in this comparative study.

Suhl instabilities for spin waves in ferromagnetic nanostripes and ultrathin films

Energy Technology Data Exchange (ETDEWEB)

Haghshenasfard, Zahra, E-mail: zhaghshe@uwo.ca; Nguyen, Hoa T.; Cottam, Michael G., E-mail: cottam@uwo.ca

2017-03-15

A microscopic (or Hamiltonian-based) theory is employed for the spin-wave instability thresholds of nonlinear processes in ultrathin ferromagnetic stripes and films under perpendicular pumping with an intense microwave field. The spatially-quantized linear spin waves in these nanostructures may participate in parametric processes through the three-magnon interactions (the first-order Suhl process) and the four-magnon interactions (the second-order Suhl process) when pumped. By contrast with most previous studies of spin-wave instabilities made for larger samples, where macroscopic (or continuum) theories involving Maxwell's equations for magnetic dipolar effects are used, a discrete lattice of effective spins is employed. Then a dipole-exchange spin Hamiltonian is employed to investigate the behavior of the quantized spin waves under perpendicular pumping, when modifications due to the more extensive spatial confinement and edges effects in these nanostructures become pronounced. The instability thresholds versus applied magnetic field are calculated, with emphasis on the size effects and geometries of the nanostructures and on the different relative strengths of the magnetic dipole-dipole and exchange interactions in materials. Numerical results are presented using parameters for Permalloy, YIG, and EuS. - Highlights: • Suhl instabilities for spin waves in magnetic stripes and films are investigated. • Three- and four-magnon processes in perpendicular pumping are taken into account. • Numerical applications are made to Permalloy, YIG, and EuS.

Directed Magnetic Particle Transport above Artificial Magnetic Domains Due to Dynamic Magnetic Potential Energy Landscape Transformation.

Science.gov (United States)

Holzinger, Dennis; Koch, Iris; Burgard, Stefan; Ehresmann, Arno

2015-07-28

An approach for a remotely controllable transport of magnetic micro- and/or nanoparticles above a topographically flat exchange-bias (EB) thin film system, magnetically patterned into parallel stripe domains, is presented where the particle manipulation is achieved by sub-mT external magnetic field pulses. Superparamagnetic core-shell particles are moved stepwise by the dynamic transformation of the particles' magnetic potential energy landscape due to the external magnetic field pulses without affecting the magnetic state of the thin film system. The magnetic particle velocity is adjustable in the range of 1-100 μm/s by the design of the substrate's magnetic field landscape (MFL), the particle-substrate distance, and the magnitude of the applied external magnetic field pulses. The agglomeration of magnetic particles is avoided by the intrinsic magnetostatic repulsion of particles due to the parallel alignment of the particles' magnetic moments perpendicular to the transport direction and parallel to the surface normal of the substrate during the particle motion. The transport mechanism is modeled by a quantitative theory based on the precise knowledge of the sample's MFL and the particle-substrate distance.

Magnetic domain studies of La0.7Sr0.3MnO3 film deposited on SrLaAlO3 (0 0 1) substrate

International Nuclear Information System (INIS)

Liu, Chi-Ching; Chu, Pei-Yuan; Chiang, Yao-Wei; Juang, Jenh-Yih; Jen, Shien-Uang

2013-01-01

Epitaxial 120 nm La 0.7 Sr 0.3 MnO 3 (LSMO) compressively strained thin films were deposited on single-crystalline SrLaAlO 3 (0 0 1) (SLAO) substrates by the pulsed laser deposition (PLD) method. From the x-ray diffraction study, we confirmed that the c-axis of the LSMO crystal pointed out of the film plane. Two kinds of magnetic experiments were performed on the film: (i) the in-plane (field H ≡ H P ) and the out-of-plane (field H ≡ H N ) magnetic hysteresis loop measurements and (ii) magnetic force microscopy scans. We have proved from both theory and experiment that the LSMO film should exhibit the weak and tilted perpendicular magnetic anisotropy at room temperature (RT), that is, the easy axis (EA) is tilted relative to the film normal by an angle θ o ≒ 37°, when the film is in the demagnetized state. The magnetic domain (MD) structure of the demagnetized LSMO film showed a maze-like pattern. Although from the in-plane hysteresis loop, H P = 600 Oe seems large enough to saturate the film, the corresponding MD structure was not in a single-domain state. Instead, there were two types of MDs: the canted MD and the saturated MD. The MD patterns of the LSMO film between the demagnetized and the remanent states were different. In addition, there were double-switch phenomena in the out-of-plane hysteresis loop. When |H N | ≅ 140 Oe, a transition of the MD pattern from the maze-like to the closure (or dense-stripe) type occurred. (paper)

Induced superconductivity in Nb/InAs-hybrid structures in parallel and perpendicular magnetic fields; Induzierte Supraleitung in Nb/InAs-Hybridstrukturen in parallelen und senkrechten Magnetfeldern

Energy Technology Data Exchange (ETDEWEB)

Rohlfing, Franziska

2007-07-15

The thesis in hand investigates experimentally Josephson contacts based on Nb/InAs-hybrid structures. The experiments discussed here were done on samples of different width of the Josephson contacts (between 500 nm and 2000 nm). They were realized by means of different methods of the semiconductor technology. The length of the Josephson contacts was about 600 nm and, as superconducting material, niobium was used. Both critical current and characteristics in the resistive regime (excess-current and multiple Andreev reflection) are studied as a function of temperature and external magnetic fields. Measurements in perpendicular and parallel magnetic fields with respect to the plain of the two-dimensional electron gas, are presented. The Andreev reflection amplitude determining the supercurrent is calculated by means of the Greens functions of the two-dimensional electron gas beneath the superconductors which is modified by the proximity effect. From the fit to the data with this model, the transparency of the boundary between the superconductor and the two-dimensional electron gas can be estimated to be about 0.1. The transparency of the point contacts in the two-dimensional electrons gas can be determined independently from the Josephson junction width dependence of the normal resistance (T=10 K). This transparency amounts to about 0.8 in the examined samples. The measurements of the critical current in a magnetic field perpendicular to the two-dimensional electron gas show a Fraunhofer pattern. In order to study the transition from perpendicular orientation into parallel orientation, measurements of the critical current as a function of the magnetic field were done for different angles. In the resistive regime, the excess current measurements in the magnetic field show a very interesting behaviour: In parallel magnetic fields, the excess current becomes zero at about 2.5 T. In perpendicular magnetic field however, the excess current is strongly suppressed below 30 m

Extraordinary Hall-effect in colloidal magnetic nanoparticle films

Energy Technology Data Exchange (ETDEWEB)

Ben Gur, Leah; Tirosh, Einat [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Segal, Amir [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Markovich, Gil, E-mail: gilmar@post.tau.ac.il [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Gerber, Alexander, E-mail: gerber@post.tau.ac.il [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel)

2017-03-15

Colloidal nickel nanoparticles (NPs) coated with polyvinylpyrrolidone (PVP) were synthesized. The nanoparticle dispersions were deposited on substrates and dried under mild heating to form conductive films. The films exhibited very small coercivity, nearly metallic conductivity, and a significant extraordinary Hall effect signal. This method could be useful for preparing simple, printed magnetic field sensors with the advantage of relatively high sensitivity around zero magnetic field, in contrast to magnetoresistive sensors, which have maximal field sensitivity away from zero magnetic field. - Highlights: • Ni nanoparticle ink capable of forming conductive films on drying. • The Ni nanoparticle films exhibit significant extraordinary Hall effect. • This system could be used for preparing printed magnetic field sensors integrated in 3D printed structures.

Magnetic domains in Co-cluster assembled films deposited by LECBD

International Nuclear Information System (INIS)

Dumas-Bouchiat, F.; Nagaraja, H.S.; Rossignol, F.; Champeaux, C.; Catherinot, A.

2005-01-01

Cobalt aggregates prepared using a cluster beam generator have been deposited on Si(100) substrate leading to thin films of randomly assembled Co nanoparticles which exhibit a spherical shape with a mono-dispersed diameter distribution centred around 9nm. Films with thickness ranging from 50 to 550nm are investigated using magnetic force microscopy (MFM) and results show the presence of twisted magnetic domains. An in-plane magnetic field applied during the growth of the layer leads to the formation of magnetic stripe domains but we observe a similar behaviour if an in-plane magnetic field is applied after the deposition. This indicates that probably the magnetic field applied during the film growth does not drive its magnetic structure. Finally, the measured variation of magnetic domain width D reveals a t dependence, where t is the film thickness, and is independent of the magnetic history of the films

Magnetic properties of thin films obtained by ion implantation of 3d metals in polyethylene-terephthalate

International Nuclear Information System (INIS)

Petukhov, V.Yu.; Ibragimova, M.I.; Khabibullina, N.R; Zheglov, E.P.; Muller, R.

2002-01-01

Polymer films containing small metal particles have been attracting particular interest because of their unique properties. Implantation of metal ions in polymers is one of the methods to synthesize metal-polymer nano-composite materials. Ion implantation makes possible the magnetic nano-structures with controlled parameters. Previously, we showed that 3d-metal implantation into numerous polymers (polymethylmethacrylate, phosphorus containing polymethylmethacrylate) resulted in the formation of a composite film consisting of metal nanoparticles buried in an implanted layer. The particles are usually found to be distributed randomly in the surface layer. It has been established that structural peculiarities, phase composition, and magnetic properties of synthesized metal-polymer systems depend on the type of the initial polymer matrix, ion types, as well as conditions of ion implantation. In the present study we have been prepared thin metal-polymer composite films by ion-beam implantation of Fe + and Co + ions in polyethylene terephthalate. The implantation of 40 keV ions at room temperature with doses from 2·10 1 6 to 3·10 17 cm -2 have been performed, with the ion current density not exceeding 10 μA/cm 2 . The magnetic properties have been investigated both by ferromagnetic resonance (FMR) and vibrating sample magnetometry (VSM). FMR spectra were recorded using magnetic radio spectrometer Varian E-12 with frequency of 9.5 GHz at room temperature. The dependencies of FMR spectra on orientation have been measured for all samples. Measurements were carried out for two orientations of the sample, normal direction of the films being either parallel or perpendicular to dc magnetic field. The values of the effective magnetization were calculated from orientation dependencies. Thin ferromagnetic films (TFF) have been shown to form for samples with both implanted ions. For samples implanted with Co + ions, the appearance of FMR lines occurs at doses markedly greater

In-plane current induced domain wall nucleation and its stochasticity in perpendicular magnetic anisotropy Hall cross structures

International Nuclear Information System (INIS)

Sethi, P.; Murapaka, C.; Lim, G. J.; Lew, W. S.

2015-01-01

Hall cross structures in magnetic nanowires are commonly used for electrical detection of magnetization reversal in which a domain wall (DW) is conventionally nucleated by a local Oersted field. In this letter, we demonstrate DW nucleation in Co/Ni perpendicular magnetic anisotropy nanowire at the magnetic Hall cross junction. The DWs are nucleated by applying an in-plane pulsed current through the nanowire without the need of a local Oersted field. The change in Hall resistance, detected using anomalous Hall effect, is governed by the magnetic volume switched at the Hall junction, which can be tuned by varying the magnitude of the applied current density and pulse width. The nucleated DWs are driven simultaneously under the spin transfer torque effect when the applied current density is above a threshold. The possibility of multiple DW generation and variation in magnetic volume switched makes nucleation process stochastic in nature. The in-plane current induced stochastic nature of DW generation may find applications in random number generation

Growth-related magnetic and physical structures in CMR films

Energy Technology Data Exchange (ETDEWEB)

Hawley, M.E.; Brown, G.W.; Hundley, M.F. [and others

1997-09-01

Scanning tunneling microscopy (STM), atomic force microscopy (AFM), and magnetic force microscopy (MFM) have proven to be powerful tools for revealing property-sensitive structures in magnetic materials. With the renewed interest in perovskite films as materials for read-heads in high density magnetic data storage, the same challenges faced by high temperature superconductor (HTS) film fabrication are repeated for these materials. To begin addressing these challenges, we used vapor phase epitaxy to fabricate La (Sr, Ca,) based manganate films on single crystal perovskite substrates under different conditions and characterized them with scanning probe microscopies, x-ray diffraction, and temperature-dependent magnetization and resistivity measurements (M(T) and {rho}(T)). The as-grown films were polygranular with grain sizes increasing with increasing temperature (T). The post-deposition annealed films consisted of coalesced layers with improved transport properties. The room temperature magnetic structure of the Sr-based films appeared to be related to defects and/or strain.

Scanning tunneling microscope observation and magnetic anisotropy of molecular beam epitaxy-grown Fe/Pt superlattices with (111) and (001) orientations

International Nuclear Information System (INIS)

Yamamoto, S.; Kato, T.; Iwata, S.; Tsunashima, S.; Uchiyama, S.

2004-01-01

The surface morphology and the perpendicular magnetic anisotropy for (001) and (111) oriented [Pt(nML)/Fe(nML)] 10 superlattices were investigated. From in situ scanning tunneling microscope observation, the small grain whose diameter was about 5-10 nm and height was 0.2-0.4 nm, was observed in the Fe(2 ML) surface grown at room temperature on the Pt(111) seed layer, while the surface of the Fe deposited at 150 deg. C was covered with flat terraces and steps. It is found that the (111) oriented films were all in-plane magnetized. On the other hand, the (001) films were in-plane magnetized at room temperature, perpendicular magnetized at 100 deg. C and 150 deg. C

Magnetic structures in ultra-thin Holmium films: Influence of external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, L.J. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Mello, V.D. [Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Anselmo, D.H.A.L. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Vasconcelos, M.S., E-mail: mvasconcelos@ect.ufrn.br [Escola de Ciência e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN (Brazil)

2015-03-01

We address the magnetic phases in very thin Ho films at the temperature interval between 20 K and 132 K. We show that slab size, surface effects and magnetic field due to spin ordering impact significantly the magnetic phase diagram. Also we report that there is a relevant reduction of the external field strength required to saturate the magnetization and for ultra-thin films the helical state does not form. We explore the specific heat and the susceptibility as auxiliary tools to discuss the nature of the phase transitions, when in the presence of an external magnetic field and temperature effects. The presence of an external field gives rise to the magnetic phase Fan and the spin-slip structures. - Highlights: • We analyze the magnetic phases of very thin Ho films in the temperature interval 20–132 K. • We show that slab size, etc. due to spin ordering may impact the magnetic phase diagram. • All magnetic phase transitions, for strong magnetic fields, are marked by the specific heat. • The presence of an external field gives rise to the magnetic phase Fan and the spin-slip one.

NUMERICAL SIMULATION OF MAGNETIC FIELD STRUCTURE IN CYLINDRICAL FILM SCREEN

Directory of Open Access Journals (Sweden)

G. F. Gromyko

2016-01-01

Full Text Available A numerical method for solving the boundary value problem for a nonlinear magnetostatic equation describing the external magnetostatic field penetration through the cylindrical film coating is developed. A mathematical model of the shielding problem based on the use of the boundary conditions of the third kind on the film surface is studied. The nonlinear dependence of the film magnetic permeability on magnetic field conforms with experimental data. The distribution of the magnetic field strength in the film layer and the magnetic permeability of the film material depending on the magnitude of the external magnetic field strength are investigated numerically.

Electromagnetic properties of thin film lead superconductors

International Nuclear Information System (INIS)

Moriyama, K.

1978-01-01

The dependence of critical film magnetic field H/sub cf/ on temperature, thickness, and surface texture of lead superconducting films was investigated, as well as the relationship between the applied magnetic field and the applied current at the critical field. Temperature and thickness dependence data were consistent with the predictions of London, of Ginzburg, and of Bardeen, Cooper, and Schreiffer. The values of H/sub cf/ of lead films deposited on a rough surface were consistently lower than for those on a smooth surface and so were not in agreement with any currently accepted theory. The degree of lowering of H/sub cf/ by a rough surface was greater in thin films than in thick films. The expected dependence of penetration depth lambda on thickness d was not observed, and the range of lambda was somewhat greater than expected. The range of coherence length was greater than predicted. The prediction for temperature dependence of critical current by Glover and Coffey was found to involve some oversimplification, and a suggested correction is supported by the data. For applied magnetic fields perpendicular to the applied current and parallel to the film surface, the relationship between the critical values of the magnetic field and the current was as predicted for lead films by Alphonse and Bergstein

Magnetic properties of Co/Pt-Pd multilayer thin film media

Energy Technology Data Exchange (ETDEWEB)

Inaba, N.; Igarashi, S.; Fujita, F.; Koike, K.; Kato, H. [Faculty of Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan); Kirino, F. [National University of Fine Arts and Music, Taitou-ku, Tokyo 110-8714 (Japan)

2007-12-15

We investigated the dependence of magnetic properties for Co/Pt{sub 100-x}Pd{sub x} multilayer thin films on the concentration in the Pt-Pd alloy layers. Perpendicular magneto anisotropy constant K {sub p} increases with increasing Pt concentration in the Pt-Pd layer, since the interface anisotropy between the Co and the Pt-Pd layers is enhanced by the increase of the Pt concentration. The Curie temperature and the temperature dependence of K{sub p} for the specimens increase with increasing the amount of Pt in the Pt-Pd layer. These results may indicate that the lattice distortion of the Co layer caused by the interface from the Pt-Pd layer becomes larger and the increase of the distortion enhances the interface anisotropy, since the lattice misfit between the Pt-Pd and the Co increases with increasing the Pt concentration. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Selective tuning of magnetization dynamics damping in Tb- and Nd-doped permalloy ultrathin films by adjacent copper nanolayers

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dong, E-mail: physzd@yahoo.com [School of Physics Science and Information Engineering, Key Lab. of Communication Science and Technology of Shandong Province, Liaocheng University, Liaocheng 252059 (China); Physics Department, Southeast University, Nanjing 211189 (China); Yue, Jinjin; Jiang, Sheng [Physics Department, Southeast University, Nanjing 211189 (China); Zhai, Ya, E-mail: yazhai@seu.edu.cn [Physics Department, Southeast University, Nanjing 211189 (China); National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China); Du, Jun; Zhai, Hongru [National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China)

2016-07-05

The mechanism of angular dependence of ferromagnetic resonance linewidth of dilute Tb and Nd doping in permalloy thin films with various thicknesses of adjacent copper layer are investigated by experimental approach and theoretical fitting by considering the contributions from intrinsic spin-orbit coupling, inhomogeneous broadening and two-magnon scattering. The results show that the damping coefficient α, by intrinsic contribution extracted from ferromagnetic resonance linewidth, increases from 0.0153 to 0.0218 for NiFe–Nd films and from 0.0193 to 0.0261 for NiFe–Tb films resulting from the spin pumping effect at the interface of NiFe–Nd(or Tb)/Cu as the thickness of copper layer increases from 1 nm to 15 nm. The surface magnetic anisotropy constant K{sub 1} is obtained and shows an decreasing trend from positive to negative, which implies that the copper layer could reduce the surface perpendicular anisotropy. The fitting spin mixed conductivity is (2.72 ± 0.18) × 10{sup 15} cm{sup −2} at NiFe–Tb/Cu interface and (2.4 ± 0.2) × 10{sup 15} cm{sup −2} at Cu/NiFe–Nd interface, respectively. - Highlights: • The thickness of Cu buffer layer affects the surface perpendicular anisotropy of FM layer. • The interface roughness could be investigated by using FMR linewidth. • The damping coefficient is enhanced by spin-pumping effect.

Field geometry dependence of magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films

International Nuclear Information System (INIS)

Saldarriaga, W.; Baca, E.; Prieto, P.; Moran, O.; Grube, K.; Fuchs, D.; Schneider, R.

2006-01-01

In-plane and out-of-plane magnetoresistance measurements on epitaxial ∼200nm thin (001)-oriented films of high oxygen pressure DC-sputtering grown manganite La 2/3 Ca 1/3 MnO 3 were carried out. Single crystal (001)-SrTiO 3 substrates were used. The samples featured a Curie temperature T C ∼260K and a magnetic moment μ(T->0K)∼3μ B per Mn atom. Magnetocrystalline anisotropy with the easy axes lying on film plane was evidenced by recording the in-plane and out-of-plane magnetization loops at temperatures, below T C , in magnetic field strengths up to 5T. Evidence for anisotropic magnetotransport in these films was provided by electric measurements in a wide temperature range up to 6T magnetic field strengths applied both perpendicular and parallel to the film plane. In both applied magnetic field geometries, current and magnetic field were maintained perpendicular to each other. Neither low-field magnetoresistance nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain imposed by the substrate in the first monolayers has partially been released. In addition, by rotating the sample 360 o around an axis parallel to film plane, in magnetic fields >=2T, a quadratic sinusoidal dependence of the magnetoresistance on the polar angle θ was observed. These results can be consistently interpreted using a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets

Magnetic Properties and Microstructure of FeOx/Fe/FePt and FeOx/FePt Films

Directory of Open Access Journals (Sweden)

Jai-Lin Tsai

2013-01-01

Full Text Available The Fe(6 nm/FePt film with perpendicular magnetization was deposited on the glass substrate. To study the oxygen diffusion effect on the coupling of Fe/FePt bilayer, the plasma oxidation with 0.5~7% oxygen flow ratio was performed during sputtered part of Fe layer and formed the FeOx(3 nm/Fe(3 nm/FePt trilayer. Two-step magnetic hysteresis loops were found in trilayer with oxygen flow ratio above 1%. The magnetization in FeOx and Fe/FePt layers was decoupled. The moments in FeOx layer were first reversed and followed by coupled Fe/FePt bilayer. The trilayer was annealed again at 500°C and 800°C for 3 minutes. When the FeOx(3 nm/Fe(3 nm/FePt trilayer was annealed at 500°C, the layers structure was changed to FeOx(6 nm/FePt bilayer due to oxygen diffusion. The hard-magnetic FeOx(6 nm/FePt film was coupled with single switching field. The FeOx/(disordered FePt layer structure was observed with further annealing at 800°C and presented soft-magnetic loop. In summary, the coupling between soft-magnetic Fe, FeOx layer, and hard-magnetic L10 FePt layer can be controlled by the oxygen diffusion behavior, and the oxidation of Fe layer was tuned by the annealing temperature. The ordered L10 FePt layer was deteriorated by oxygen and became disordered FePt when the annealed temperature was up to 800°C.

Electroplated thick-film cobalt platinum permanent magnets

International Nuclear Information System (INIS)

Oniku, Ololade D.; Qi, Bin; Arnold, David P.

2016-01-01

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

Exchange coupling in hybrid anisotropy magnetic multilayers quantified by vector magnetometry

Energy Technology Data Exchange (ETDEWEB)

Morrison, C., E-mail: C.Morrison.2@warwick.ac.uk; Miles, J. J.; Thomson, T. [School of Computer Science, University of Manchester, Manchester M13 9PL (United Kingdom); Anh Nguyen, T. N. [Materials Physics, School of ICT, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Spintronics Research Group, Laboratory for Nanotechnology (LNT), VNU-HCM, Ho Chi Minh City (Viet Nam); Fang, Y.; Dumas, R. K. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Åkerman, J. [Materials Physics, School of ICT, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden)

2015-05-07

Hybrid anisotropy thin film heterostructures, where layers with perpendicular and in-plane anisotropy are separated by a thin spacer, are novel materials for zero/low field spin torque oscillators and bit patterned media. Here, we report on magnetization reversal and exchange coupling in a archetypal Co/Pd (perpendicular)-NiFe (in-plane) hybrid anisotropy system studied using vector vibrating sample magnetometry. This technique allows us to quantify the magnetization reversal in each individual magnetic layer, and measure of the interlayer exchange as a function of non-magnetic spacer thickness. At large (>1 nm) spacer thicknesses Ruderman-Kittel-Kasuya-Yosida-like exchange dominates, with orange-peel coupling providing a significant contribution only for sub-nm spacer thickness.

Magnetic properties of partially oxidized Fe films

Science.gov (United States)

Garcia, Miguel Angel; Lopez-Dominguez, Victor; Hernando, Antonio

Hybrid magnetic nanostructures exhibit appealing properties due to interface and proximity effects. A simple and interesting system of hybrid magnetic nanomaterials are partially oxidized ferromagnetic films. We have fabricated Fe films by thermal evaporation and performed a partial oxidation to magnetite (Fe3O4) by annealing in air at different times and temperatures. The magnetic properties of the films evolve from those of pure metallic iron to pure magnetite, showing intermediate states where the proximity effects control the magnetic behavior. At some stages, the magnetization curves obtained by SQUID and MOKE magnetometry exhibit important differences due to the dissimilar contribution of both phases to the magneto-optical response of the system This work has been supported by the Ministerio Español de Economia y Competitividad (MINECO) MAT2013-48009-C4-1. V.L.D and M.A.G. acknowledges financial support from BBVA foundation.

2D magnetic texture analysis of Co-Cu films

Energy Technology Data Exchange (ETDEWEB)

Bayirli, Mehmet; Karaagac, Oznur; Kockar, Hakan [Balikesir Univ. (Turkey). Physics Dept.; Alper, Mursel [Uludag Univ., Bursa (Turkey). Physics Dept.

2017-08-01

The magnetic textures for the produced magnetic materials are important concepts in accordance with technical applications. Therefore, the aim of this article is to determine 2D magnetic textures of electrodeposited Co-Cu films by the measurement of hysteresis loops at the incremented angles. For that, Co-Cu films were deposited with different Co{sup 2+} in the electrolyte. In addition, the easy-axis orientation in the films from the squareness values of the angles, M{sub p}(β) obtained by the hysteresis loops have been numerically studied using the Fourier series analysis. The differences observed in the magnetic easy-axis distributions were attributed to changes of the incorporation of Co in the films with the change of Co{sup 2+} in the electrolyte. The coefficients of Fourier series (A{sub 0} and A{sub 2n}) were also computed for 2D films. It is seen that a systematic and small decrease in A{sub 0} and an obvious decrease in A{sub 2n} (n=1) were observed with increasing incorporated Co in the films. Results imply that interactions cause slightly demagnetization effect accordance with higher incorporation of Co in the films. Furthermore, the crystal structure of the Co-Cu films analysed by X-ray diffraction revealed that the films have dominantly face-centred cubic structure. Film contents analysed by energy-dispersive X-ray spectroscopy and film morphologies observed by scanning electron microscope also support the magnetic texture analysis results found by numerical computation.

2D magnetic texture analysis of Co-Cu films

International Nuclear Information System (INIS)

Bayirli, Mehmet; Karaagac, Oznur; Kockar, Hakan; Alper, Mursel

2017-01-01

The magnetic textures for the produced magnetic materials are important concepts in accordance with technical applications. Therefore, the aim of this article is to determine 2D magnetic textures of electrodeposited Co-Cu films by the measurement of hysteresis loops at the incremented angles. For that, Co-Cu films were deposited with different Co"2"+ in the electrolyte. In addition, the easy-axis orientation in the films from the squareness values of the angles, M_p(β) obtained by the hysteresis loops have been numerically studied using the Fourier series analysis. The differences observed in the magnetic easy-axis distributions were attributed to changes of the incorporation of Co in the films with the change of Co"2"+ in the electrolyte. The coefficients of Fourier series (A_0 and A_2_n) were also computed for 2D films. It is seen that a systematic and small decrease in A_0 and an obvious decrease in A_2_n (n=1) were observed with increasing incorporated Co in the films. Results imply that interactions cause slightly demagnetization effect accordance with higher incorporation of Co in the films. Furthermore, the crystal structure of the Co-Cu films analysed by X-ray diffraction revealed that the films have dominantly face-centred cubic structure. Film contents analysed by energy-dispersive X-ray spectroscopy and film morphologies observed by scanning electron microscope also support the magnetic texture analysis results found by numerical computation.

Electron spin resonance study of the demagnetization fields of the ferromagnetic and paramagnetic films

Directory of Open Access Journals (Sweden)

I.I. Gimazov, Yu.I. Talanov

2015-12-01

Full Text Available The results of the electron spin resonance study of the La1-xCaxMnO3 manganite and the diphenyl-picrylhydrazyl thin films for the magnetic field parallel and perpendicular to plane of the films are presented. The temperature dependence of the demagnetizing field is obtained. The parameters of the Curie-Weiss law are estimated for the paramagnetic thin film.

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

Science.gov (United States)

Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

2018-03-01

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

Observation of second spin reorientation transition within ultrathin region in Fe films on Ag(001) surface

International Nuclear Information System (INIS)

Khim, T.-Y.; Shin, M.; Lee, H.; Park, B.-G.; Park, J.-H.

2014-01-01

We acquired direct measurements for in-plane and perpendicular-to-plane magnetic moments of Fe films using an x-ray magnetic circular dichroism technique with increase of the Fe thickness (up to 40 Å) on the Ag(001) surface. Epitaxial Fe/Ag(001) films were grown in situ with the thickness varying from 2 Å to 40 Å, and the magnetic anisotropy was carefully investigated as a function of the film thickness. We found re-entrance of the in-plane magnetic anisotropy of the Fe film in ultrathin region. The results manifest that the epitaxial Fe/Ag(001) film undergoes two distinct spin reorientation transitions from in-plane to out-of-plane at the film thickness t ≈ 9 Å and back to in-plane at t ≈ 18 Å as t increases.

Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

Energy Technology Data Exchange (ETDEWEB)

Wu, Chun; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Donggang, E-mail: lidonggang@smm.neu.edu.cn [School of Metallurgy, Northeastern University, Shenyang 110819 (China); Lou, Changsheng [School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159 (China); Zhao, Yue; Gao, Yang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

2016-10-15

A high magnetic field (up to 12 T) has been used to anneal 2.6-µm-thick Co{sub 50}Ni{sub 40}P{sub 10} films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films. - Highlights: • High magnetic field annealing accelerated phase transformation from γ to ε. • High magnetic field annealing enhanced preferred hcp-(002) orientation. • High magnetic field annealing decreased particle size, roughness and coercivity. • High magnetic field annealing increased the saturation and remanent magnetization.

Quantum-well-driven magnetism in thin films

DEFF Research Database (Denmark)

Mirbt, S.; Johansson, B.; Skriver, Hans Lomholt

1996-01-01

We have performed local spin-density calculations for an fee (100) Ag substrate covered by 1 to 16 monolayers (ML) of Pd. We find that thin films of Pd are magnetic with a moment of the order of 0.3 mu(B) except for films of 1-2 ML and 5-7 ML where magnetism is completely suppressed. We present...... a physically transparent explanation of this behavior in terms of the Stoner picture and magnetic quantum-well states....

Influence of interdiffusion on the magnetic properties of Co/Si (100) films after high magnetic field annealing

International Nuclear Information System (INIS)

Zhao, Yue; Wang, Kai; Wang, Qiang; Li, Guojian; Lou, Changsheng; Pang, Hongxuan; He, Jicheng

2015-01-01

The influence of interdiffusion on the magnetic properties of Co/Si (100) films after thermal annealing in the presence of a strong magnetic field was investigated. The interdiffusion coefficients of films that were annealed at temperatures of 380 °C and 420 °C in the presence of high magnetic fields were not affected. However, the interdiffusion coefficient of films annealed at 400 °C in the presence of a high magnetic field decreased significantly. The change in the interdiffusion coefficient, caused by high magnetic field annealing, increased the content of the magnetic phase. This increase in the magnetic phase improved the saturation magnetization. A new method of high magnetic field annealing is presented that can modulate the diffusion and magnetic properties of thin films. - Highlights: • Interdiffusion of Co/Si (100) films by high magnetic field annealing was studied. • Thickness of the diffusion layer was reduced by magnetic field annealing at 400 °C. • Interdiffusion coefficient decreased following magnetic field annealing at 400 °C. • Saturation magnetization increased after high magnetic field annealing at 400 °C

Electroplated thick-film cobalt platinum permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

2016-10-15

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

Energy Technology Data Exchange (ETDEWEB)

Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

2016-12-30

Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

Electron holography study of magnetization behavior in the writer pole of a perpendicular magnetic recording head by a 1 MV transmission electron microscope.

Science.gov (United States)

Hirata, Kei; Ishida, Yoichi; Akashi, Tetsuya; Shindo, Daisuke; Tonomura, Akira

2012-01-01

The magnetic domain structure of the writer poles of perpendicular magnetic recording heads was studied using electron holography. Although the domain structure of a 100-nm-thick writer pole could be observed with a 300 kV transmission electron microscope, that of the 250-nm-thick writer pole could not be analyzed due to the limited transmission capability of the instrument. On the other hand, the detailed domain structure of the 250-nm-thick writer pole was successfully analyzed by a 1 MV electron microscope using its high transmission capability. The thickness and material dependency of the domain structure of a writer pole were discussed.

Structural and magnetic studies of Cr doped nickel ferrite thin films

International Nuclear Information System (INIS)

Panwar, Kalpana; Heda, N. L.; Tiwari, Shailja; Bapna, Komal; Ahuja, B. L.; Choudhary, R. J.; Phase, D. M.

2016-01-01

We have studied the structural and magnetic properties of Cr doped nickel ferrite thin films deposited on Si (100) and Si (111) using pulsed laser deposition technique. The films were deposited under vacuum and substrate temperature was kept at 700°C. X-ray diffraction analysis revealed that films on both substrates have single phase cubic spinel structure. However, the film grown on Si (111) shows better crystalline behavior. Fourier transform infrared spectroscopy suggests that films on both substrates have mixed spinel structure. These films show magnetic hysteresis behavior and magnetization value of film on Si (100) is larger than that on Si (111). It turns out that structural and magnetic properties of these two films are correlated.

High thermal stability in W/MgO/CoFeB/W/CoFeB/W stacks via ultrathin W insertion with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Liu, Yi; Yu, Tao [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Zhengyong; Zhong, Huicai [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Khamis, Khamis Masoud [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Kaigui, E-mail: kgzhu@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191 (China)

2016-07-15

The perpendicular magnetic anisotropy (PMA) of a series of top MgO/CoFeB/W stacks were studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was found that the stack can still maintain PMA in a 1.9 nm thick CoFeB free layer. Besides, we investigated the thermal stability factor ∆ of a spin transfer torque magnetic random access memory (STT-MRAM) by inserting an ultra-thin W film of 0.8 nm between two CoFeB films. The result shows a clear PMA behavior for the samples with CoFeB thickness up to 2.5 nm, and an in-plane magnetic anisotropy (IMA) when the CoFeB is thicker than 2.5 nm. Moreover, the thermal stability factor ∆ of the CoFeB stack with W insertion is about 132 for a 50 nm size STT-MRAM device, which is remarkably improved compared to 112 for a sample without W insertion. Our results represent an alternative way to realize the endurance at high annealing temperature, high-density and high ∆ in STT-MRAM device by ultra-thin W insertion. - Highlights: • The MgO/CoFeB/W multilayer can still maintain PMA in a CoFeB thickness of 1.9 nm. • The sample with 2.5 nm thickness of CoFeB by W insertion can still maintain PMA. • The sample with W insertion can still maintain PMA until the annealing temperature as high as 350 °C. • The thermal stability factor ∆ of sample with W insertion could be increase to about 132 for a 50 nm size STT-MRAM device.

Fourfold magnetic anisotropy, coercivity and magnetization reversal of Co/V bilayers grown on MgO(0 0 1)

Energy Technology Data Exchange (ETDEWEB)

Calleja, J F [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Muro, M GarcIa del [Departament de Fisica Fonamental and Institut de Nanociencia i Nanotecnologia IN2UB de la Universitat de Barcelona, MartIi Franques, 1, E-08028 Barcelona (Spain); Presa, B [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Matarranz, R [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Corrales, J A [Departmento de Informatica, Universidad de Oviedo, Edificio Departamental 1, Campus de Viesques s/n, 33204 Gijon (Spain); Labarta, A [Departament de Fisica Fonamental and Institut de Nanociencia i Nanotecnologia IN2UB de la Universitat de Barcelona, MartIi Franques, 1, E-08028 Barcelona (Spain); Contreras, M C [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain)

2007-11-21

Magnetic anisotropy and magnetization reversal of Al/Co/V/MgO(0 0 1) thin films have been investigated. The films were fabricated by magnetron sputtering. The roles of both Co and V layers thicknesses have been studied. Magnetic characterization has been carried out by transverse susceptibility (TS) measurements and hysteresis loops. Cobalt is grown in the hcp structure on V with the c axis parallel to the film plane. Two types of hcp Co crystal are grown with the c axes perpendicular to each other. This structure gives rise to a fourfold magnetic anisotropy. When the V layer thickness is below 40 A a superimposed uniaxial anisotropy develops, the effect of which is a depression in the TS, in agreement with theoretical calculations. This uniaxial anisotropy is induced by the substrate and due to a discontinuous growth of the V layer. For hcp Co grown on V, the magnetic anisotropy rapidly increases with Co layer thickness. In this case, unexpected shifted hysteresis loops along the hard axes were observed when the films were not saturated. This has been explained by taking into account the magnetization reversal along the hard axis: it proceeds via magnetization rotation of some portions of the film at high fields, and by domain wall motion of the rest of the film at lower field values.

Fourfold magnetic anisotropy, coercivity and magnetization reversal of Co/V bilayers grown on MgO(0 0 1)

International Nuclear Information System (INIS)

Calleja, J F; Muro, M GarcIa del; Presa, B; Matarranz, R; Corrales, J A; Labarta, A; Contreras, M C

2007-01-01

Magnetic anisotropy and magnetization reversal of Al/Co/V/MgO(0 0 1) thin films have been investigated. The films were fabricated by magnetron sputtering. The roles of both Co and V layers thicknesses have been studied. Magnetic characterization has been carried out by transverse susceptibility (TS) measurements and hysteresis loops. Cobalt is grown in the hcp structure on V with the c axis parallel to the film plane. Two types of hcp Co crystal are grown with the c axes perpendicular to each other. This structure gives rise to a fourfold magnetic anisotropy. When the V layer thickness is below 40 A a superimposed uniaxial anisotropy develops, the effect of which is a depression in the TS, in agreement with theoretical calculations. This uniaxial anisotropy is induced by the substrate and due to a discontinuous growth of the V layer. For hcp Co grown on V, the magnetic anisotropy rapidly increases with Co layer thickness. In this case, unexpected shifted hysteresis loops along the hard axes were observed when the films were not saturated. This has been explained by taking into account the magnetization reversal along the hard axis: it proceeds via magnetization rotation of some portions of the film at high fields, and by domain wall motion of the rest of the film at lower field values

Thickness dependence of the magnetic anisotropy and dynamic magnetic response of ferromagnetic NiFe films

International Nuclear Information System (INIS)

Silva, E F; Corrêa, M A; Chesman, C; Bohn, F; Della Pace, R D; Plá Cid, C C; Kern, P R; Carara, M; Alves Santos, O; Rodríguez-Suárez, R L; Azevedo, A; Rezende, S M

2017-01-01

We investigate the thickness dependence of the magnetic anisotropy and dynamic magnetic response of ferromagnetic NiFe films. We go beyond quasi-static measurements and focus on the dynamic magnetic response by considering three complementary techniques: the ferromagnetic resonance, magnetoimpedance and magnetic permeability measurements. We verify remarkable modifications in the magnetic anisotropy, i.e. the well-known behavior of in-plane uniaxial magnetic anisotropy systems gives place to a complex magnetic behavior as the thickness increases, and splits the films in two groups according to the magnetic properties. We identify magnetoimpedance and magnetic permeability curves with multiple resonance peaks, as well as the evolution of the ferromagnetic resonance absorption spectra, as fingerprints of strong changes of the magnetic properties associated to the vanishing of the in-plane magnetic anisotropy and to the emergence of non-homogeneous magnetization configuration, local anisotropies and out-of-plane anisotropy contribution arisen as a consequence of the non-uniformities of the stress stored in the film as the thickness is increased and/or to the columnar growth of the film. We interpret the experimental results in terms of the structural and morphological properties, quasi-static magnetic behavior, magnetic domain structure and different mechanisms governing the magnetization dynamics at distinct frequency ranges. (paper)

Magnetization measurement of single La0.67Ca0.33MnO3 nanotubes in perpendicular magnetic fields using a micromechanical torsional oscillator

International Nuclear Information System (INIS)

Antonio, D.; Dolz, M.I.; Pastoriza, H.

2010-01-01

Using a silicon micromechanical resonator as a sensitive magnetometer, the authors have studied both experimentally and theoretically the magnetic behavior of two isolated ferromagnetic nanotubes of perovskite La 0.67 Ca 0.33 MnO 3 . The article investigates the specific configuration where a magnetic field H is applied perpendicular to the magnetic easy axis of an isolated nanotube characterized by an uniaxial anisotropy constant K. In this situation, the magnetization M reduces the effective elastic constant k M of the resonator. This softening of the mechanical system is opposed to the hardening effect of M observed in a previous work, where H was applied parallel to the easy axis. Moreover, in this magnetic field configuration two distinct magnetization regimes are manifested, depending on the magnitude of H. For H>>2K/M the magnetization is almost parallel to the applied magnetic field and for H<<2K/M it is almost parallel to the easy axis of the nanotube. At a certain value of H there is a sharp transition from one regime to the other, accompanied by a peak in the energy dissipation.

Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

International Nuclear Information System (INIS)

Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji

2014-01-01

We report the electric-field modulation of magnetism of a hexagonal Cr 1-δ Te thin film. A gate voltage V G is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr 1-δ Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr 1-δ Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

Energy Technology Data Exchange (ETDEWEB)

Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji [Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-07-15

We report the electric-field modulation of magnetism of a hexagonal Cr{sub 1-δ}Te thin film. A gate voltage V{sub G} is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr{sub 1-δ}Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr{sub 1-δ}Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetic films for GHz applications (abstract)

International Nuclear Information System (INIS)

Korenivski, V.; van Dover, R.B.

1997-01-01

Tremendous growth of the communications industry and the increasingly high demand for low-cost light-weight/small-size products drive technology to designs with a high degree of integration. In particular, planar inductors used in integrated circuits with significantly improved inductance per unit area characteristics are needed for further miniaturization of cellular phones operating at 0.95 and 1.9 GHz. Little has been done, however, to use magnetic films to improve the performance and/or reduce size of planar magnetic flux devices. The successful thin-film material would have a high ferromagnetic resonance (FMR) frequency (well above the operating frequency of the device), large permaeability, and low magnetic loss, and very importantly be technologically attractive, i.e., be process compatible with IC technology and have as few preparation steps as possible. Here, we report on fabrication of metallic ferromagnetic films of CoNbZr, CoNbZr/AlN mulitilayered laminates, and exchange-biased structures suitable for GHz applications. Lamination of CoNbZr with thin insulating layers of AlN is shown to significantly improve the microstructure and dc magnetic properties of the films having thicknesses >0.2 μm, as well as to be effective in suppressing eddy current losses at frequencies up to 1 endash 2 GHz. We use exchange biasing to increase the FMR frequency of soft CoNbZr. In-plane unidirectional anisotropy fields of ∼50 Oe are achieved, which result in FMR frequencies >2 GHz. Permeability values of ∼200 with quality factors of ∼10 at 1 GHz are demonstrated. The films are deposited at room temperature and require no postdeposition processing. Application of these films in planar inductors is discussed.copyright 1997 American Institute of Physics

Growth and structure of Co/Au magnetic thin films; Croissance et structure des couches minces magnetiques Co/Au

Energy Technology Data Exchange (ETDEWEB)

Marsot, N

1999-01-14

We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

Magnetic structure of Tb-Fe films with an artificially layered structure

International Nuclear Information System (INIS)

Yamauchi, K.; Habu, K.; Sato, N.

1988-01-01

The magnetic structure of Tb-Fe films with an artificially layered structure has been investigated by measuring the temperature dependence of the magnetization of the films. Ferrimagnetic coupling between Tb and Fe through the interface was explicitly observed up to about 9-A Tb and 10-A Fe layers. Films with thinner Tb and Fe layers than these thicknesses are composed of only ferrimagnetically coupled Tb-Fe regions. Films with thicker layers of Tb and Fe are composed of ferrimagnetically coupled Tb-Fe, ferromagnetic Fe, ferromagnetic Tb, and/or magnetically compensated Tb regions. The Tb-Fe films exhibit various temperature dependencies of the magnetization corresponding to these magnetic structures