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Sample records for performance electron devices

  1. High performance flexible electronics for biomedical devices.

    Science.gov (United States)

    Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

    2014-01-01

    Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

  2. Optimization of flexible substrate by gradient elastic modulus design for performance improvement of flexible electronic devices

    Science.gov (United States)

    Xia, Minggang; Liang, Chunping; Hu, Ruixue; Cheng, Zhaofang; Liu, Shiru; Zhang, Shengli

    2018-05-01

    It is imperative and highly desirable to buffer the stress in flexible electronic devices. In this study, we designed and fabricated lamellate poly(dimethylsiloxane) (PDMS) samples with gradient elastic moduli, motivated by the protection of the pomelo pulp by its skin, followed by the measurements of their elastic moduli. We demonstrated that the electrical and fatigue performances of a Ag-nanowire thin film device on the PDMS substrate with a gradient elastic modulus are significantly better than those of a device on a substrate with a monolayer PDMS. This study provides a robust scheme to effectively protect flexible electronic devices.

  3. Practical microwave electron devices

    CERN Document Server

    Meurant, Gerard

    2013-01-01

    Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions.

  4. Ion implantation in compound semiconductors for high-performance electronic devices

    International Nuclear Information System (INIS)

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-01-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

  5. Electronic adherence monitoring device performance and patient acceptability: a randomized control trial.

    Science.gov (United States)

    Chan, Amy Hai Yan; Stewart, Alistair William; Harrison, Jeff; Black, Peter Nigel; Mitchell, Edwin Arthur; Foster, Juliet Michelle

    2017-05-01

    To investigate the performance and patient acceptability of an inhaler electronic monitoring device in a real-world childhood asthma population. Children 6 to 15 years presenting with asthma to the hospital emergency department and prescribed inhaled corticosteroids were included. Participants were randomized to receive a device with reminder features enabled or disabled for use with their preventer. Device quality control tests were conducted. Questionnaires on device acceptability, utility and ergonomics were completed at six months. A total of 1306 quality control tests were conducted; 84% passed pre-issue and 87% return testing. The most common failure reason was actuation under-recording. Acceptability scores were high, with higher scores in the reminder than non-reminder group (median, 5 th -95 th percentile: 4.1, 3.1-5.0 versus 3.7, 2.3-4.8; p 90%) rated the device easy to use. Feedback was positive across five themes: device acceptability, ringtone acceptability, suggestions for improvement, effect on medication use, and effect on asthma control. This study investigates electronic monitoring device performance and acceptability in children using quantitative and qualitative measures. Results indicate satisfactory reliability, although failure rates of 13-16% indicate the importance of quality control. Favorable acceptability ratings support the use of these devices in children.

  6. Impact of stand-by energy losses in electronic devices on smart network performance

    Directory of Open Access Journals (Sweden)

    Mandić-Lukić Jasmina S.

    2012-01-01

    Full Text Available Limited energy resources and environmental concerns due to ever increasing energy consumption, more and more emphasis is being put on energy savings. Smart networks are promoted worldwide as a powerful tool used to improve the energy efficiency through consumption management, as well as to enable the distributed power generation, primarily based on renewable energy sources, to be optimally explored. To make it possible for the smart networks to function, a large number of electronic devices is needed to operate or to be in their stand-by mode. The consumption of these devices is added to the consumption of many other electronic devices already in use in households and offices, thus giving rise to the overall power consumption and threatening to counteract the primary function of smart networks. This paper addresses the consumption of particular electronic devices, with an emphasis placed on their thermal losses when in stand-by mode and their total share in the overall power consumption in certain countries. The thermal losses of electronic devices in their stand-by mode are usually neglected, but it seems theoretically possible that a massive increase in their number can impact net performance of the future smart networks considerably so that above an optimum level of energy savings achieved by their penetration, total consumption begins to increase. Based on the current stand-by energy losses from the existing electronic devices, we propose that the future penetration of smart networks be optimized taking also into account losses from their own electronic devices, required to operate in stand-by mode.

  7. Image timing and detector performance of a matrix ion-chamber electronic portal imaging device

    International Nuclear Information System (INIS)

    Greer, P.

    1996-01-01

    The Oncology Centre of Auckland Hospital recently purchased a Varian PortalVision TM electronic portal imaging device (EPID). Image acquisition times, input-output characteristics and contrast-detail curves of this matrix liquid ion-chamber EPID have been measured to examine the variation in imaging performance with acquisition mode. The variation in detector performance with acquisition mode has been examined. The HV cycle time can be increased to improve image quality. Consideration should be given to the acquisition mode and HV cycle time used when imaging to ensure adequate imaging performance with reasonable imaging time. (author)

  8. Implantable electronic medical devices

    CERN Document Server

    Fitzpatrick, Dennis

    2014-01-01

    Implantable Electronic Medical Devices provides a thorough review of the application of implantable devices, illustrating the techniques currently being used together with overviews of the latest commercially available medical devices. This book provides an overview of the design of medical devices and is a reference on existing medical devices. The book groups devices with similar functionality into distinct chapters, looking at the latest design ideas and techniques in each area, including retinal implants, glucose biosensors, cochlear implants, pacemakers, electrical stimulation t

  9. Electronic devices and circuits

    CERN Document Server

    Pridham, Gordon John

    1972-01-01

    Electronic Devices and Circuits, Volume 3 provides a comprehensive account on electronic devices and circuits and includes introductory network theory and physics. The physics of semiconductor devices is described, along with field effect transistors, small-signal equivalent circuits of bipolar transistors, and integrated circuits. Linear and non-linear circuits as well as logic circuits are also considered. This volume is comprised of 12 chapters and begins with an analysis of the use of Laplace transforms for analysis of filter networks, followed by a discussion on the physical properties of

  10. Molecular beam epitaxy for high-performance Ga-face GaN electron devices

    International Nuclear Information System (INIS)

    Kaun, Stephen W; Speck, James S; Wong, Man Hoi; Mishra, Umesh K

    2013-01-01

    Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT performance steadily improved, mainly through the optimization of device fabrication processes. Soon, HEMT performance will be limited by the crystalline quality of the epistructure. MBE offers heterostructure growth with highly abrupt interfaces, low point defect concentrations, and very low carbon and hydrogen impurity concentrations. Minimizing parasitic leakage pathways and resistances is essential in the growth of HEMTs for high-frequency and high-power applications. Through growth on native substrates with very low threading dislocation density, low-leakage HEMTs with very low on-resistance can be realized. Ga-rich plasma-assisted MBE (PAMBE) has been studied extensively, and it is clear that this technique has inherent limitations, including a high density of leakage pathways and a very small growth parameter space. Relatively new MBE growth techniques—high-temperature N-rich PAMBE and ammonia-based MBE—are being developed to circumvent the shortcomings of Ga-rich PAMBE. (invited review)

  11. Electronic devices and circuits

    CERN Document Server

    Pridham, Gordon John

    1968-01-01

    Electronic Devices and Circuits, Volume 1 deals with the design and applications of electronic devices and circuits such as passive components, diodes, triodes and transistors, rectification and power supplies, amplifying circuits, electronic instruments, and oscillators. These topics are supported with introductory network theory and physics. This volume is comprised of nine chapters and begins by explaining the operation of resistive, inductive, and capacitive elements in direct and alternating current circuits. The theory for some of the expressions quoted in later chapters is presented. Th

  12. Initial Clinical Experience Performing Patient Treatment Verification With an Electronic Portal Imaging Device Transit Dosimeter

    Energy Technology Data Exchange (ETDEWEB)

    Berry, Sean L., E-mail: BerryS@MSKCC.org [Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York (United States); Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, New York (United States); Polvorosa, Cynthia; Cheng, Simon; Deutsch, Israel; Chao, K. S. Clifford; Wuu, Cheng-Shie [Department of Radiation Oncology, Columbia University, New York, New York (United States)

    2014-01-01

    Purpose: To prospectively evaluate a 2-dimensional transit dosimetry algorithm's performance on a patient population and to analyze the issues that would arise in a widespread clinical adoption of transit electronic portal imaging device (EPID) dosimetry. Methods and Materials: Eleven patients were enrolled on the protocol; 9 completed and were analyzed. Pretreatment intensity modulated radiation therapy (IMRT) patient-specific quality assurance was performed using a stringent local 3%, 3-mm γ criterion to verify that the planned fluence had been appropriately transferred to and delivered by the linear accelerator. Transit dosimetric EPID images were then acquired during treatment and compared offline with predicted transit images using a global 5%, 3-mm γ criterion. Results: There were 288 transit images analyzed. The overall γ pass rate was 89.1% ± 9.8% (average ± 1 SD). For the subset of images for which the linear accelerator couch did not interfere with the measurement, the γ pass rate was 95.7% ± 2.4%. A case study is presented in which the transit dosimetry algorithm was able to identify that a lung patient's bilateral pleural effusion had resolved in the time between the planning CT scan and the treatment. Conclusions: The EPID transit dosimetry algorithm under consideration, previously described and verified in a phantom study, is feasible for use in treatment delivery verification for real patients. Two-dimensional EPID transit dosimetry can play an important role in indicating when a treatment delivery is inconsistent with the original plan.

  13. Electronic Devices, Methods, and Computer Program Products for Selecting an Antenna Element Based on a Wireless Communication Performance Criterion

    DEFF Research Database (Denmark)

    2014-01-01

    A method of operating an electronic device includes providing a plurality of antenna elements, evaluating a wireless communication performance criterion to obtain a performance evaluation, and assigning a first one of the plurality of antenna elements to a main wireless signal reception...... and transmission path and a second one of the plurality of antenna elements to a diversity wireless signal reception path based on the performance evaluation....

  14. Electronic security device

    Science.gov (United States)

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  15. Electronic security device

    International Nuclear Information System (INIS)

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-01-01

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs

  16. Assessment of dosimetrical performance in 11 Varian a-Si500 electronic portal imaging devices

    International Nuclear Information System (INIS)

    Kavuma, Awusi; Glegg, Martin; Currie, Garry; Elliott, Alex

    2008-01-01

    Dosimetrical characteristics of 11 Varian a-Si-500 electronic portal imaging devices (EPIDs) in clinical use for periods ranging between 10 and 86 months were investigated for consistency of performance and portal dosimetry implications. Properties studied include short-term reproducibility, signal linearity with monitor units, response to reference beam, signal uniformity across the detector panel, signal dependence on field size, dose-rate influence, memory effects and image profiles as a function of monitor units. The EPID measurements were also compared with those of the ionization chambers' to ensure stability of the linear accelerators. Depending on their clinical installation date, the EPIDs were interfaced with one of the two different acquisition control software packages, IAS2/IDU-II or IAS3/IDU-20. Both the EPID age and image acquisition system influenced the dosimetric characteristics with the newer version (IAS3 with IDU-20) giving better data reproducibility and linearity fit than the older version (IAS2 with IDU-II). The relative signal response (uniformity) after 50 MU was better than 95% of the central value and independent of detector. Sensitivity for all EPIDs reduced continuously with increasing dose rates for the newer image acquisition software. In the dose-rate range 100-600 MU min -1 , the maximum variation in sensitivity ranged between 1 and 1.8% for different EPIDs. For memory effects, the increase in the measured signal at the centre of the irradiated field for successive images was within 1.8% and 1.0% for the older and newer acquisition systems, respectively. Image profiles acquired at a lower MU in the radial plane (gun-target) had gradients in measured pixel values of up to 25% for the older system. Detectors with software/hardware versions IAS3/IDU-20 have a high degree of accuracy and are more suitable for routine quantitative IMRT dosimetrical verification.

  17. Performance of large electron energy filter in large volume plasma device

    International Nuclear Information System (INIS)

    Singh, S. K.; Srivastava, P. K.; Awasthi, L. M.; Mattoo, S. K.; Sanyasi, A. K.; Kaw, P. K.; Singh, R.

    2014-01-01

    This paper describes an in-house designed large Electron Energy Filter (EEF) utilized in the Large Volume Plasma Device (LVPD) [S. K. Mattoo, V. P. Anita, L. M. Awasthi, and G. Ravi, Rev. Sci. Instrum. 72, 3864 (2001)] to secure objectives of (a) removing the presence of remnant primary ionizing energetic electrons and the non-thermal electrons, (b) introducing a radial gradient in plasma electron temperature without greatly affecting the radial profile of plasma density, and (c) providing a control on the scale length of gradient in electron temperature. A set of 19 independent coils of EEF make a variable aspect ratio, rectangular solenoid producing a magnetic field (B x ) of 100 G along its axis and transverse to the ambient axial field (B z ∼ 6.2 G) of LVPD, when all its coils are used. Outside the EEF, magnetic field reduces rapidly to 1 G at a distance of 20 cm from the center of the solenoid on either side of target and source plasma. The EEF divides LVPD plasma into three distinct regions of source, EEF and target plasma. We report that the target plasma (n e ∼ 2 × 10 11  cm −3 and T e ∼ 2 eV) has no detectable energetic electrons and the radial gradients in its electron temperature can be established with scale length between 50 and 600 cm by controlling EEF magnetic field. Our observations reveal that the role of the EEF magnetic field is manifested by the energy dependence of transverse electron transport and enhanced transport caused by the plasma turbulence in the EEF plasma

  18. Research Area 4.1 Nano- and Bio-Electronics: Lester Eastman Conference on High-Performance Devices

    Science.gov (United States)

    2017-06-02

    significantly lower. Moreover, wells containing MoS2 on the polyimide film had a large amount of cells growing on the material, further indicating high ...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...Research Area 4.1 Nano- and Bio-Electronics: Lester Eastman Conference on High -Performance Devices The 2016 IEEE Lester Eastman Conference of High

  19. Electron beam irradiating device

    Energy Technology Data Exchange (ETDEWEB)

    Shinohara, K

    1969-12-20

    The efficiency of an electron beam irradiating device is heightened by improving the irradiation atmosphere and the method of cooling the irradiation window. An irradiation chamber one side of which incorporates the irradiation windows provided at the lower end of the scanner is surrounded by a suitable cooling system such as a coolant piping network so as to cool the interior of the chamber which is provided with circulating means at each corner to circulate and thus cool an inert gas charged therewithin. The inert gas, chosen from a group of such gases which will not deleteriously react with the irradiating equipment, forms a flowing stream across the irradiation window to effect its cooling and does not contaminate the vacuum exhaust system or oxidize the filament when penetrating the equipment through any holes which the foil at the irradiation window may incur during the irradiating procedure.

  20. Device for electron beam machining

    International Nuclear Information System (INIS)

    Panzer, S.; Ardenne, T. von; Liebergeld, H.

    1984-01-01

    The invention concerns a device for electron beam machining, in particular welding. It is aimed at continuous operation of the electron irradiation device. This is achieved by combining the electron gun with a beam guiding chamber, to which vacuum chambers are connected. The working parts to be welded can be arranged in the latter

  1. Performance of a restrictive flow device and an electronic syringe driver for continuous subcutaneous infusion.

    Science.gov (United States)

    Capes, D; Martin, K; Underwood, R

    1997-10-01

    The aim of this study was to investigate the flow performance of the mechanical Springfusor 30 short model and the electronic Graseby MS16A. Flow rate was measured gravimetrically in a temperature-controlled cabinet. There was no statistically significant difference between the Graseby and Springfusor syringe drivers in the flow rate error at 25 degrees C. The percentage of flow rates within +/-20% accuracy during a 35-min periods at 25 degrees C was significantly less with the Graseby, being 91.9% compared with 100% for the Springfusor. Only 58.2% of flow rates with the Graseby were within the manufacturer claimed accuracy of +/-5%. The flow rate of the Springfusor was affected by temperature; at 30 degrees C the mean flow rate was 10.8% greater than at 25 degrees C. These results indicate that the Springfusor 30 had less flow rate variation than the Graseby MS16A. However, this would not be expected to cause noticeable clinical effects when used for opioid infusion in palliative care.

  2. Performance of a remote interrogation system for the in-hospital evaluation of cardiac implantable electronic devices.

    Science.gov (United States)

    Mittal, Suneet; Younge, Kevin; King-Ellison, Kelly; Hammill, Eric; Stein, Kenneth

    2016-08-01

    Patients with a cardiac implantable electronic device (CIED) often need device interrogation in an in-hospital environment. A diagnosis-only, remote interrogation device and process for CIED interrogation was developed to address this situation. Here, we describe our initial clinical experience with this system. The LATITUDE Consult Communicator is a stand-alone interrogation-only device used to read the patient's implanted CIED. Once retrieved, the data are securely transmitted via an analog phone line to a central server. The clinician can request a review of the transmitted data at any time. Following FDA approval, we determined the usage and performance of the system. Communicators (n = 53) were installed in 42 hospital facilities. The most common location was in the emergency department (n = 32, 60 %). There were 509 discreet transmissions, which were categorized as follows: no arrhythmia episodes in the past 72 h and no out of range measurements (n = 174, 34 %); arrhythmia episodes in past 72 h but no out of range measurements (n = 170, 33 %); and further review recommended (n = 130, 26 %). (In 35 [7 %] instances, interrogation without analysis was requested.) The further review interrogations were then sub-divided into those of a non-urgent and urgent nature. Overall, only 53 (10 %) of the 509 transmissions were classified as urgent. Clinicians had access to full technical consultation in ≤15 min in 89 % of instances. Our data demonstrate the feasibility of a new diagnosis-only, remote interrogation device and remote evaluation process for the interrogation of CIEDs in an in-hospital environment.

  3. Pressurized waterproof case electronic device

    KAUST Repository

    Berumen, Michael L.

    2013-01-01

    A pressurized waterproof case for an electronic device is particularly adapted for fluid-tight containment and operation of a touch-screen electronic device or the like therein at some appreciable water depth. In one example, the case may be formed

  4. ELSA electron stretcher devices

    International Nuclear Information System (INIS)

    1979-10-01

    The use of an electron stretcher ring at the Bonn electron synchrotron is discussed. The construction of the proposed ring is described, and the costs are estimated. Possible experiments using this ring are discussed. (HSI)

  5. Synaptic electronics: materials, devices and applications.

    Science.gov (United States)

    Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

    2013-09-27

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

  6. Synaptic electronics: materials, devices and applications

    International Nuclear Information System (INIS)

    Kuzum, Duygu; Yu, Shimeng; Philip Wong, H-S

    2013-01-01

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented. (topical review)

  7. Impact of stand-by energy losses in electronic devices on smart network performance

    OpenAIRE

    Mandić-Lukić Jasmina S.; Pantović Vladan S.; Vasiljević Željko S.

    2012-01-01

    Limited energy resources and environmental concerns due to ever increasing energy consumption, more and more emphasis is being put on energy savings. Smart networks are promoted worldwide as a powerful tool used to improve the energy efficiency through consumption management, as well as to enable the distributed power generation, primarily based on renewable energy sources, to be optimally explored. To make it possible for the smart networks to function, a large number of electronic dev...

  8. Preparation and thermal performance of paraffin/Nano-SiO2 nanocomposite for passive thermal protection of electronic devices

    International Nuclear Information System (INIS)

    Wang, Yaqin; Gao, Xuenong; Chen, Peng; Huang, Zhaowen; Xu, Tao; Fang, Yutang; Zhang, Zhengguo

    2016-01-01

    Highlights: • Three types of paraffin/nano-SiO 2 nanocomposites were prepared and characterized. • Thermo-physical properties of these composites were determined and compared. • One composite with lower thermal conductivity showed better thermal insulation properties. • This composite was identified as thermal insulation material for electronic components. - Abstract: In this paper, three grades of nano silicon dioxide (nano-SiO 2 ), NS1, NS2 and NS3, were mixed into paraffin to prepare nanocomposites as novel insulation materials for electronic passive thermal protection applications. The optimal mass percentages of paraffin for the three composites, NS1P, NS2P and NS3P, were determined to be 75%, 70% and 65%, respectively. Investigations by means of scanning electron micrographs (SEM), differential scanning calorimeter (DSC), thermogravimetric analysis (TG), hot disk analyzer and thermal protection performance tests were devoted to the morphology, thermal properties and thermal protection performance analysis of composites. Experimental results showed that paraffin uniformly distributed into the pores and on the surface of nano-SiO 2 . Melting points of composites declined and experimental latent heat became lower than the calculated values with the decrease of nano-SiO 2 pore size. The NS1P composite had larger thermal storage capacity, better reliability and stability compared with NS2P and NS3P. In addition, compared with 90% wt.% paraffin/EG composite, the incorporation of NS1 (25 wt.%) into paraffin caused not only 63.2% reduction in thermal conductivity, but also 21.8% increase in thermal protection time affected by the ambient temperature. Thus those good properties confirmed that NS1P (75 wt.%) composite was a viable candidate for protecting electronic devices under high temperature environment.

  9. Electronic devices for analog signal processing

    CERN Document Server

    Rybin, Yu K

    2012-01-01

    Electronic Devices for Analog Signal Processing is intended for engineers and post graduates and considers electronic devices applied to process analog signals in instrument making, automation, measurements, and other branches of technology. They perform various transformations of electrical signals: scaling, integration, logarithming, etc. The need in their deeper study is caused, on the one hand, by the extension of the forms of the input signal and increasing accuracy and performance of such devices, and on the other hand, new devices constantly emerge and are already widely used in practice, but no information about them are written in books on electronics. The basic approach of presenting the material in Electronic Devices for Analog Signal Processing can be formulated as follows: the study with help from self-education. While divided into seven chapters, each chapter contains theoretical material, examples of practical problems, questions and tests. The most difficult questions are marked by a diamon...

  10. Effect of substituents on electronic properties, thin film structure and device performance of dithienothiophene-phenylene cooligomers

    International Nuclear Information System (INIS)

    Zhang Shiming; Guo Yunlong; Xi Hongxia; Di Chongan; Yu Jian; Zheng Kai; Liu Ruigang; Zhan Xiaowei; Liu Yunqi

    2009-01-01

    Dithienothiophene-phenylene cooligomers with n-hexyloxy or n-dodecyloxy substituents have been synthesized and compared to the previously reported unsubstituted parent compound. The effect of substituents on the thermal, electronic, optical, thin film structure and field-effect transistor (OFET) properties was investigated. Structural phase transitions from highly-ordered nanocrystalline to liquid crystalline were observed at 241 and 213 deg. C for n-hexyloxy- and n-dodecyloxy-substituted compounds respectively, different from the parent compound. For the alkoxy-substituted compounds, the absorption spectra in thin film blue shift 50 nm, while the fluorescence spectra in thin film red shift 88-100 nm compared to those in solution. The OFET devices based on the alkoxy-substituted compounds exhibit mobilities as high as ca 0.02 cm 2 V -1 s -1 and their performance is sensitive to the alkoxy substituents and substrate temperatures

  11. Evening electronic device use: The effects on alertness, sleep and next-day physical performance in athletes.

    Science.gov (United States)

    Jones, Maddison J; Peeling, Peter; Dawson, Brian; Halson, Shona; Miller, Joanna; Dunican, Ian; Clarke, Michael; Goodman, Carmel; Eastwood, Peter

    2018-01-01

    The aim of the present study was to investigate the influence of different types of tasks performed with or without an electronic device (tablet) on pre-sleep alertness, subsequent sleep quality and next-day athletic performance. Eight highly trained netball players attended a sleep laboratory for pre-sleep testing, polysomnographic sleep monitoring and next-day physical performance testing on 5 separate occasions (1 familiarisation and 4 experimental sessions). For 2 h prior to bedtime, athletes completed cognitively stimulating tasks (puzzles) or passive tasks (reading) with or without a tablet. Sleepiness tended to be greater after reading compared to completing puzzles without a tablet (d = 0.80), but not with a tablet. Melatonin concentration increased more so after reading compared to completing puzzles on a tablet (P = 0.02). There were no significant differences in sleep quality or quantity or next-day athletic performance between any of the conditions. These data suggest that using a tablet for 2 h prior to sleep does not negatively affect subsequent sleep or next-day performance in athletes.

  12. Pressurized waterproof case electronic device

    KAUST Repository

    Berumen, Michael L.

    2013-01-31

    A pressurized waterproof case for an electronic device is particularly adapted for fluid-tight containment and operation of a touch-screen electronic device or the like therein at some appreciable water depth. In one example, the case may be formed as an enclosure having an open top panel or face covered by a flexible, transparent membrane or the like for the operation of the touchscreen device within the case. A pressurizing system is provided for the case to pressurize the case and the electronic device therein to slightly greater than ambient in order to prevent the external water pressure from bearing against the transparent membrane and pressing it against the touch screen, thereby precluding operation of the touch screen device within the case. The pressurizing system may include a small gas cartridge or may be provided from an external source.

  13. Remote detection of electronic devices

    Science.gov (United States)

    Judd, Stephen L [Los Alamos, NM; Fortgang, Clifford M [Los Alamos, NM; Guenther, David C [Los Alamos, NM

    2012-09-25

    An apparatus and method for detecting solid-state electronic devices are described. Non-linear junction detection techniques are combined with spread-spectrum encoding and cross correlation to increase the range and sensitivity of the non-linear junction detection and to permit the determination of the distances of the detected electronics. Nonlinear elements are detected by transmitting a signal at a chosen frequency and detecting higher harmonic signals that are returned from responding devices.

  14. Electronic portal imaging devices

    International Nuclear Information System (INIS)

    Lief, Eugene

    2008-01-01

    The topics discussed include, among others, the following: Role of portal imaging; Port films vs. EPID; Image guidance: Elekta volume view; Delivery verification; Automation tasks of portal imaging; Types of portal imaging (Fluorescent screen, mirror, and CCD camera-based imaging; Liquid ion chamber imaging; Amorpho-silicon portal imagers; Fluoroscopic portal imaging; Kodak CR reader; and Other types of portal imaging devices); QA of EPID; and Portal dosimetry (P.A.)

  15. Polymer electronic devices and materials.

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

    2006-01-01

    Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

  16. Electronic control devices

    International Nuclear Information System (INIS)

    Hartill, D.L.

    1981-01-01

    The subject of these lectures is the translation of information from particle detectors to computers. Large solid angle general purpose detectors at the intersection regions of high energy e+e- storage rings and pp and pp storage rings are discussed. Three choices for data acquisition are reviewed: use CAMAC (Computer Aided Measurement and Control), start from scratch and design a system, or wait for the final version of the proposed FASTBUS to be developed. The do-it-yourself procedure includes designs of drift chamber discriminator, time to amplitude converter, and data card block diagram. Trigger systems, the fast decision making systems judging an event interesting enough for a read-out cycle to be initiated, are discussed. Finally, a FASTBUS system layout, with its goals of minimum bus speed, general system topologies, and support multiple smart devices is given

  17. Investigation of the mechanical performance of Siemens linacs components during arc: gantry, MLC, and electronic portal imaging device.

    Science.gov (United States)

    Rowshanfarzad, Pejman; Häring, Peter; Riis, Hans L; Zimmermann, Sune J; Ebert, Martin A

    2015-01-01

    In radiotherapy treatments, it is crucial to monitor the performance of linac components including gantry, collimation system, and electronic portal imaging device (EPID) during arc deliveries. In this study, a simple EPID-based measurement method is suggested in conjunction with an algorithm to investigate the stability of these systems at various gantry angles with the aim of evaluating machine-related errors in treatments. The EPID sag, gantry sag, changes in source-to-detector distance (SDD), EPID and collimator skewness, EPID tilt, and the sag in leaf bank assembly due to linac rotation were separately investigated by acquisition of 37 EPID images of a simple phantom with five ball bearings at various gantry angles. A fast and robust software package was developed for automated analysis of image data. Three Siemens linacs were investigated. The average EPID sag was within 1 mm for all tested linacs. Two machines showed >1 mm gantry sag. Changes in the SDD values were within 7.5 mm. EPID skewness and tilt values were <1° in all machines. The maximum sag in leaf bank assembly was <1 mm. The method and software developed in this study provide a simple tool for effective investigation of the behavior of Siemens linac components with gantry rotation. Such a comprehensive study has been performed for the first time on Siemens machines.

  18. Students distracted by electronic devices perform at the same level as those who are focused on the lecture

    Directory of Open Access Journals (Sweden)

    Romesh P. Nalliah

    2014-09-01

    Full Text Available Background. Little is known about the characteristics of internet distractions that students may engage in during lecture. The objective of this pilot study is to identify some of the internet-based distractions students engage in during in-person lectures. The findings will help identify what activities most commonly cause students to be distracted from the lecture and if these activities impact student learning.Methods. This study is a quasi-experimental pilot study of 26 students from a single institution. In the current study, one class of third-year students were surveyed after a lecture on special needs dentistry. The survey identified self-reported utilization patterns of “smart” devices during the lecture. Additionally, twelve quiz-type questions were given to assess the students’ recall of important points in the lecture material that had just been covered.Results. The sample was comprised of 26 students. Of these, 17 were distracted in some form (either checking email, sending email, checking Facebook, or sending texts. The overall mean score on the test was 9.85 (9.53 for distracted students and 10.44 for non-distracted students. There were no significant differences in test scores between distracted and non-distracted students (p = 0.652. Gender and types of distractions were not significantly associated with test scores (p > 0.05. All students believed that they understood all the important points from the lecture.Conclusions. Every class member felt that they acquired the important learning points during the lecture. Those who were distracted by electronic devices during the lecture performed similarly to those who were not. However, results should be interpreted with caution as this study was a small quasi-experimental design and further research should examine the influence of different types of distraction on different types of learning.

  19. Students distracted by electronic devices perform at the same level as those who are focused on the lecture.

    Science.gov (United States)

    Nalliah, Romesh P; Allareddy, Veerasathpurush

    2014-01-01

    Background. Little is known about the characteristics of internet distractions that students may engage in during lecture. The objective of this pilot study is to identify some of the internet-based distractions students engage in during in-person lectures. The findings will help identify what activities most commonly cause students to be distracted from the lecture and if these activities impact student learning. Methods. This study is a quasi-experimental pilot study of 26 students from a single institution. In the current study, one class of third-year students were surveyed after a lecture on special needs dentistry. The survey identified self-reported utilization patterns of "smart" devices during the lecture. Additionally, twelve quiz-type questions were given to assess the students' recall of important points in the lecture material that had just been covered. Results. The sample was comprised of 26 students. Of these, 17 were distracted in some form (either checking email, sending email, checking Facebook, or sending texts). The overall mean score on the test was 9.85 (9.53 for distracted students and 10.44 for non-distracted students). There were no significant differences in test scores between distracted and non-distracted students (p = 0.652). Gender and types of distractions were not significantly associated with test scores (p > 0.05). All students believed that they understood all the important points from the lecture. Conclusions. Every class member felt that they acquired the important learning points during the lecture. Those who were distracted by electronic devices during the lecture performed similarly to those who were not. However, results should be interpreted with caution as this study was a small quasi-experimental design and further research should examine the influence of different types of distraction on different types of learning.

  20. Electron emitting filaments for electron discharge devices

    International Nuclear Information System (INIS)

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1988-01-01

    This patent describes an electron emitting device for use in an electron discharge system. It comprises: a filament having a pair of terminal ends, electrical supply means for supplying electrical power to the terminal ends of the filament for directly heating the filament by the passage of an electrical current along the filament between the terminal ends, the filament being substantially tapered in cross section continuously in one direction from one of its pair of terminal ends to another of its pair of terminal ends to achieve uniform heating of the filament along the length thereof by compensating for the nonuniform current along the filament due to the emission of electrons therefrom

  1. Electronic device and method of manufacturing an electronic device

    NARCIS (Netherlands)

    2009-01-01

    An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units

  2. Investigation of the mechanical performance of Siemens linacs components during arc: gantry, MLC, and electronic portal imaging device

    Directory of Open Access Journals (Sweden)

    Rowshanfarzad P

    2015-11-01

    Full Text Available Pejman Rowshanfarzad,1 Peter Häring,2 Hans L Riis,3 Sune J Zimmermann,3 Martin A Ebert1,4 1School of Physics, The University of Western Australia, Crawley, WA, Australia; 2German Cancer Research Center (DKFZ, Medical Physics in Radiation Oncology, Heidelberg, Germany; 3Radiofysisk Laboratorium, Odense University Hospital, Odense C, Denmark; 4Department of Radiation Oncology, Sir Charles Gairdner Hospital, Nedlands, WA, Australia Background: In radiotherapy treatments, it is crucial to monitor the performance of linac components including gantry, collimation system, and electronic portal imaging device (EPID during arc deliveries. In this study, a simple EPID-based measurement method is suggested in conjunction with an algorithm to investigate the stability of these systems at various gantry angles with the aim of evaluating machine-related errors in treatments. Methods: The EPID sag, gantry sag, changes in source-to-detector distance (SDD, EPID and collimator skewness, EPID tilt, and the sag in leaf bank assembly due to linac rotation were separately investigated by acquisition of 37 EPID images of a simple phantom with five ball bearings at various gantry angles. A fast and robust software package was developed for automated analysis of image data. Three Siemens linacs were investigated. Results: The average EPID sag was within 1 mm for all tested linacs. Two machines showed >1 mm gantry sag. Changes in the SDD values were within 7.5 mm. EPID skewness and tilt values were <1° in all machines. The maximum sag in leaf bank assembly was <1 mm. Conclusion: The method and software developed in this study provide a simple tool for effective investigation of the behavior of Siemens linac components with gantry rotation. Such a comprehensive study has been performed for the first time on Siemens machines. Keywords: linac, Siemens, arc, sag, EPID, gantry

  3. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    Science.gov (United States)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-07-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

  4. Characterization of a high performance ultra-thin heat pipe cooling module for mobile hand held electronic devices

    Science.gov (United States)

    Ahamed, Mohammad Shahed; Saito, Yuji; Mashiko, Koichi; Mochizuki, Masataka

    2017-11-01

    In recent years, heat pipes have been widely used in various hand held mobile electronic devices such as smart phones, tablet PCs, digital cameras. With the development of technology these devices have different user friendly features and applications; which require very high clock speeds of the processor. In general, a high clock speed generates a lot of heat, which needs to be spreaded or removed to eliminate the hot spot on the processor surface. However, it is a challenging task to achieve proper cooling of such electronic devices mentioned above because of their confined spaces and concentrated heat sources. Regarding this challenge, we introduced an ultra-thin heat pipe; this heat pipe consists of a special fiber wick structure named as "Center Fiber Wick" which can provide sufficient vapor space on the both sides of the wick structure. We also developed a cooling module that uses this kind of ultra-thin heat pipe to eliminate the hot spot issue. This cooling module consists of an ultra-thin heat pipe and a metal plate. By changing the width, the flattened thickness and the effective length of the ultra-thin heat pipe, several experiments have been conducted to characterize the thermal properties of the developed cooling module. In addition, other experiments were also conducted to determine the effects of changes in the number of heat pipes in a single module. Characterization and comparison of the module have also been conducted both experimentally and theoretically.

  5. SU-G-BRA-06: Quantification of Tracking Performance of a Multi-Layer Electronic Portal Imaging Device

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Y; Rottmann, J; Myronakis, M; Berbeco, R [Department of Radiation Oncology, Brigham and Women’s Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, MA (United States)

    2016-06-15

    Purpose: The purpose of this study was to quantify the improvement in tumor tracking, with and without fiducial markers, afforded by employing a multi-layer (MLI) electronic portal imaging device (EPID) over the current state-of-the-art, single-layer, digital megavolt imager (DMI) architecture. Methods: An ideal observer signal-to-noise ratio (d’) approach was used to quantify the ability of an MLI EPID and a current, state-of-the-art DMI EPID to track lung tumors from the treatment beam’s-eye-view. Using each detector modulation transfer function (MTF) and noise power spectrum (NPS) as inputs, a detection task was employed with object functions describing simple three-dimensional Cartesian shapes (spheres and cylinders). Marker-less tumor tracking algorithms often use texture discrimination to differentiate benign and malignant tissue. The performance of such algorithms is simulated by employing a discrimination task for the ideal observer, which measures the ability of a system to differentiate two image quantities. These were defined as the measured textures for benign and malignant lung tissue. Results: The NNPS of the MLI ∼25% of that of the DMI at the expense of decreased MTF at intermediate frequencies (0.25≤performance in tumor tracking is greatly improved by the additional imager layers. This implies that further improvements in tracking may be gained through increasing the thickness of each MLI layer. For tracking, the MLI performance is limited by noise response. Losses in MTF result in negligible differences in d

  6. Fullerene Derived Molecular Electronic Devices

    Science.gov (United States)

    Menon, Madhu; Srivastava, Deepak; Saini, Subbash

    1998-01-01

    The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.

  7. Capacitor ageing in electronic devices

    Directory of Open Access Journals (Sweden)

    Richard B. N. Vital

    2015-10-01

    Full Text Available The moment when an electronic component doesn’t work like requirements, previously established is a task that need to be considered since began of a system design. However, the use of different technologies, operating under several environmental conditions, makes a component choice a complex step in system design. This paper analyzes the effects that ageing phenomenon of capacitors may introduce in electronic devices operation. For this reason, reliability concepts, processes and mechanism of degradation are presented. Additionally, some mathematical models are presented to assist maintenance activities or component replacement. The presented approach compares the operability of intact and aged components.

  8. New Vacuum Electronic Devices for Radar

    Directory of Open Access Journals (Sweden)

    Hu Yinfu

    2016-08-01

    Full Text Available Vacuum Electronic Devices (VEDs which are considered as the heart of a radar system, play an important role in their development. VEDs and radar systems supplement and promote each other. Some new trends in VEDs have been observed with advancements in the simulation tools for designing VEDs, new materials, new fabrication techniques. Recently, the performance of VEDs has greatly improved. In addition, new devices have been invented, which have laid the foundation for the developments of radar detection technology. This study introduces the recent development trends and research results of VEDs from microwave and millimeter wave devices and power modules, integrated VEDs, terahertz VEDs, and high power VEDs.

  9. Graphene nanoribbons for electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Geng, Zhansong; Granzner, Ralf; Kittler, Mario; Schwierz, Frank [FG Festkoerperelektronik, Institut fuer Mikro- und Nanoelektronik und Institut fuer Mikro- und Nanotechnologien MacroNano registered, Technische Universitaet Ilmenau (Germany); Haehnlein, Bernd; Auge, Manuel; Pezoldt, Joerg [FG Nanotechnologie, Institut fuer Mikro- und Nanoelektronik und Institut fuer Mikro- und Nanotechnologien MacroNano registered, Technische Universitaet Ilmenau (Germany); Lebedev, Alexander A. [National Research University of Information Technologies, Mechanics and Optics, St. Petersburg (Russian Federation); Division Solid State Electronics, Ioffe Institute, Sankt-Peterburg (Russian Federation); Davydov, Valery Y. [Division Solid State Electronics, Ioffe Institute, Sankt-Peterburg (Russian Federation)

    2017-11-15

    Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types - graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that - in spite of the remarkable progress achieved during the past 10 years - graphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. High performance bio-integrated devices

    Science.gov (United States)

    Kim, Dae-Hyeong; Lee, Jongha; Park, Minjoon

    2014-06-01

    In recent years, personalized electronics for medical applications, particularly, have attracted much attention with the rise of smartphones because the coupling of such devices and smartphones enables the continuous health-monitoring in patients' daily life. Especially, it is expected that the high performance biomedical electronics integrated with the human body can open new opportunities in the ubiquitous healthcare. However, the mechanical and geometrical constraints inherent in all standard forms of high performance rigid wafer-based electronics raise unique integration challenges with biotic entities. Here, we describe materials and design constructs for high performance skin-mountable bio-integrated electronic devices, which incorporate arrays of single crystalline inorganic nanomembranes. The resulting electronic devices include flexible and stretchable electrophysiology electrodes and sensors coupled with active electronic components. These advances in bio-integrated systems create new directions in the personalized health monitoring and/or human-machine interfaces.

  11. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    International Nuclear Information System (INIS)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-01-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A −1 , 81.22 lm W −1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m −2 to 10 000 cd m −2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density–voltage ( J – V ) characteristics of the electron-only devices. In particular, by comparing the J – V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m −2 to 10870 cd m −2 , as is beneficial to the lighting application. (paper)

  12. Conducting polymer based biomolecular electronic devices

    Indian Academy of Sciences (India)

    Conducting polymers; LB films; biosensor microactuators; monolayers. ... have been projected for applications for a wide range of biomolecular electronic devices such as optical, electronic, drug-delivery, memory and biosensing devices.

  13. Carbon footprint of electronic devices

    Science.gov (United States)

    Sloma, Marcin

    2013-07-01

    Paper assesses the greenhouse gas emissions related to the electronic sectors including information and communication technology and media sectors. While media often presents the carbon emission problem of other industries like petroleum industry, the airlines and automobile sectors, plastics and steel manufacturers, the electronics industry must include the increasing carbon footprints caused from their applications like media and entertainment, computers and cooling devices, complex telecommunications networks, cloud computing and powerful mobile phones. In that sense greenhouse gas emission of electronics should be studied in a life cycle perspective, including regular operational electricity use. Paper presents which product groups or processes are major contributors in emission. From available data and extrapolation of existing information we know that the information and communication technology sector produced 1.3% and media sector 1.7% of global gas emissions within production cycle, using the data from 2007.In the same time global electricity use of that sectors was 3.9% and 3.2% respectively. The results indicate that for both sectors operation leads to more gas emissions than manufacture, although impacts from the manufacture is significant, especially in the supply chain. Media electronics led to more emissions than PCs (manufacture and operation). Examining the role of electronics in climate change, including disposal of its waste, will enable the industry to take internal actions, leading to lowering the impact on the climate change within the sector itself.

  14. Shelf life of electronic/electrical devices

    International Nuclear Information System (INIS)

    Polanco, S.; Behera, A.K.

    1993-01-01

    This paper discusses inconsistencies which exist between various industry practices regarding the determination of shelf life for electrical and electronic components. New methodologies developed to evaluate the shelf life of electrical and electronic components are described and numerous tests performed at Commonwealth Edison Company's Central Receiving Inspection and Testing (CRIT) Facility are presented. Based upon testing and analysis using the Arrhenius methodology and typical materials used in the manufacturing of electrical and electronic components, shelf life of these devices was determined to be indefinite. Various recommendations to achieve an indefinite. Various recommendations to achieve an indefinite shelf life are presented to ultimately reduce inventory and operating costs at nuclear power plants

  15. Comparative Effectiveness of Different Phase Change Materials to Improve Cooling Performance of Heat Sinks for Electronic Devices

    Directory of Open Access Journals (Sweden)

    Ahmad Hasan

    2016-08-01

    Full Text Available This paper thermo-physically characterizes salt hydrate, paraffin wax and milk fat as phase change materials (PCMs. The three PCMs are compared in terms of improving heat sink (HS performance for cooling electronic packaging. An experimental study is carried out on commercially available finned HS with and without PCM under natural ventilation (NV and forced ventilation (FV at different heat loads (4 W to 10 W. The results indicate that integration of all of the PCMs into the HS improves its cooling performance; however, milk fat lags behind the other two PCMs in terms of cooling produced. A three-dimensional pressure-based conjugate heat transfer model has been developed and validated with experimental results. The model predicts the parametric influence of PCM melting range, thermal conductivity and density on HS thermal management performance. The HS cooling performance improves with increased density and conductivity while it deteriorates with the wider melting range of the PCMs.

  16. Single Molecule Electronics and Devices

    Science.gov (United States)

    Tsutsui, Makusu; Taniguchi, Masateru

    2012-01-01

    The manufacture of integrated circuits with single-molecule building blocks is a goal of molecular electronics. While research in the past has been limited to bulk experiments on self-assembled monolayers, advances in technology have now enabled us to fabricate single-molecule junctions. This has led to significant progress in understanding electron transport in molecular systems at the single-molecule level and the concomitant emergence of new device concepts. Here, we review recent developments in this field. We summarize the methods currently used to form metal-molecule-metal structures and some single-molecule techniques essential for characterizing molecular junctions such as inelastic electron tunnelling spectroscopy. We then highlight several important achievements, including demonstration of single-molecule diodes, transistors, and switches that make use of electrical, photo, and mechanical stimulation to control the electron transport. We also discuss intriguing issues to be addressed further in the future such as heat and thermoelectric transport in an individual molecule. PMID:22969345

  17. A device for measuring electron beam characteristics

    Directory of Open Access Journals (Sweden)

    M. Andreev

    2017-01-01

    Full Text Available This paper presents a device intended for diagnostics of electron beams and the results obtained with this device. The device comprises a rotating double probe operating in conjunction with an automated probe signal collection and processing system. This provides for measuring and estimating the electron beam characteristics such as radius, current density, power density, convergence angle, and brightness.

  18. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

    KAUST Repository

    Khan, Jafar Iqbal

    2016-03-03

    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials\\' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Reading from electronic devices versus hardcopy text.

    Science.gov (United States)

    Hue, Jennifer E; Rosenfield, Mark; Saá, Gianinna

    2014-01-01

    The use of electronic reading devices has increased dramatically. However, some individuals report increased visual symptoms when reading from electronic screens. This investigation compared reading from two electronic devices (Amazon Kindle or Apple Ipod) versus hardcopy text in two groups of 20 subjects. Subjects performed a 20 min reading task for each condition. Both the accommodative response and reading rate were monitored during the trial. Immediately post-task, subjects completed a questionnaire concerning the ocular symptoms experienced during the task. In comparing the Kindle with hardcopy, no significant difference in the total symptom score was observed, although the mean score for the symptoms of tired eyes and eye discomfort was significantly higher with the Kindle. No significant differences in reading rate were found. When comparing the Ipod with hardcopy, no significant differences in symptom scores were found. The mean reading rate with the Ipod was significantly slower than for hardcopy while the mean lag of accommodation was significantly larger for the Ipod. Given the significant increase in symptoms with the Kindle, and larger lag of accommodation and reduced reading rate with the Ipod, one may conclude that reading from electronic devices is not equivalent to hardcopy.

  20. Ocular Tolerance of Contemporary Electronic Display Devices.

    Science.gov (United States)

    Clark, Andrew J; Yang, Paul; Khaderi, Khizer R; Moshfeghi, Andrew A

    2018-05-01

    Electronic displays have become an integral part of life in the developed world since the revolution of mobile computing a decade ago. With the release of multiple consumer-grade virtual reality (VR) and augmented reality (AR) products in the past 2 years utilizing head-mounted displays (HMDs), as well as the development of low-cost, smartphone-based HMDs, the ability to intimately interact with electronic screens is greater than ever. VR/AR HMDs also place the display at much closer ocular proximity than traditional electronic devices while also isolating the user from the ambient environment to create a "closed" system between the user's eyes and the display. Whether the increased interaction with these devices places the user's retina at higher risk of damage is currently unclear. Herein, the authors review the discovery of photochemical damage of the retina from visible light as well as summarize relevant clinical and preclinical data regarding the influence of modern display devices on retinal health. Multiple preclinical studies have been performed with modern light-emitting diode technology demonstrating damage to the retina at modest exposure levels, particularly from blue-light wavelengths. Unfortunately, high-quality in-human studies are lacking, and the small clinical investigations performed to date have failed to keep pace with the rapid evolutions in display technology. Clinical investigations assessing the effect of HMDs on human retinal function are also yet to be performed. From the available data, modern consumer electronic displays do not appear to pose any acute risk to vision with average use; however, future studies with well-defined clinical outcomes and illuminance metrics are needed to better understand the long-term risks of cumulative exposure to electronic displays in general and with "closed" VR/AR HMDs in particular. [Ophthalmic Surg Lasers Imaging Retina. 2018;49:346-354.]. Copyright 2018, SLACK Incorporated.

  1. Electronic voltage and current transformers testing device.

    Science.gov (United States)

    Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

    2012-01-01

    A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

  2. Complications after cardiac implantable electronic device implantations

    DEFF Research Database (Denmark)

    Kirkfeldt, Rikke Esberg; Johansen, Jens Brock; Nohr, Ellen Aagaard

    2013-01-01

    Complications after cardiac implantable electronic device (CIED) treatment, including permanent pacemakers (PMs), cardiac resynchronization therapy devices with defibrillators (CRT-Ds) or without (CRT-Ps), and implantable cardioverter defibrillators (ICDs), are associated with increased patient...

  3. Investigation of Electronic Corrosion at Device Level

    DEFF Research Database (Denmark)

    Jellesen, Morten Stendahl; Minzari, Daniel; Rathinavelu, Umadevi

    2010-01-01

    This work presents device level testing of a lead free soldered electronic device tested with bias on under cyclic humidity conditions in a climatic chamber. Besides severe temperature and humidity during testing some devices were deliberately contaminated before testing. Contaminants investigated...

  4. Value-added Synthesis of Graphene: Recycling Industrial Carbon Waste into Electrodes for High-Performance Electronic Devices.

    Science.gov (United States)

    Seo, Hong-Kyu; Kim, Tae-Sik; Park, Chibeom; Xu, Wentao; Baek, Kangkyun; Bae, Sang-Hoon; Ahn, Jong-Hyun; Kim, Kimoon; Choi, Hee Cheul; Lee, Tae-Woo

    2015-11-16

    We have developed a simple, scalable, transfer-free, ecologically sustainable, value-added method to convert inexpensive coal tar pitch to patterned graphene films directly on device substrates. The method, which does not require an additional transfer process, enables direct growth of graphene films on device substrates in large area. To demonstrate the practical applications of the graphene films, we used the patterned graphene grown on a dielectric substrate directly as electrodes of bottom-contact pentacene field-effect transistors (max. field effect mobility ~0.36 cm(2)·V(-1)·s(-1)), without using any physical transfer process. This use of a chemical waste product as a solid carbon source instead of commonly used explosive hydrocarbon gas sources for graphene synthesis has the dual benefits of converting the waste to a valuable product, and reducing pollution.

  5. Value-added Synthesis of Graphene: Recycling Industrial Carbon Waste into Electrodes for High-Performance Electronic Devices

    Science.gov (United States)

    Seo, Hong-Kyu; Kim, Tae-Sik; Park, Chibeom; Xu, Wentao; Baek, Kangkyun; Bae, Sang-Hoon; Ahn, Jong-Hyun; Kim, Kimoon; Choi, Hee Cheul; Lee, Tae-Woo

    2015-11-01

    We have developed a simple, scalable, transfer-free, ecologically sustainable, value-added method to convert inexpensive coal tar pitch to patterned graphene films directly on device substrates. The method, which does not require an additional transfer process, enables direct growth of graphene films on device substrates in large area. To demonstrate the practical applications of the graphene films, we used the patterned graphene grown on a dielectric substrate directly as electrodes of bottom-contact pentacene field-effect transistors (max. field effect mobility ~0.36 cm2·V-1·s-1), without using any physical transfer process. This use of a chemical waste product as a solid carbon source instead of commonly used explosive hydrocarbon gas sources for graphene synthesis has the dual benefits of converting the waste to a valuable product, and reducing pollution.

  6. Value-added Synthesis of Graphene: Recycling Industrial Carbon Waste into Electrodes for High-Performance Electronic Devices

    Science.gov (United States)

    Seo, Hong-Kyu; Kim, Tae-Sik; Park, Chibeom; Xu, Wentao; Baek, Kangkyun; Bae, Sang-Hoon; Ahn, Jong-Hyun; Kim, Kimoon; Choi, Hee Cheul; Lee, Tae-Woo

    2015-01-01

    We have developed a simple, scalable, transfer-free, ecologically sustainable, value-added method to convert inexpensive coal tar pitch to patterned graphene films directly on device substrates. The method, which does not require an additional transfer process, enables direct growth of graphene films on device substrates in large area. To demonstrate the practical applications of the graphene films, we used the patterned graphene grown on a dielectric substrate directly as electrodes of bottom-contact pentacene field-effect transistors (max. field effect mobility ~0.36 cm2·V−1·s−1), without using any physical transfer process. This use of a chemical waste product as a solid carbon source instead of commonly used explosive hydrocarbon gas sources for graphene synthesis has the dual benefits of converting the waste to a valuable product, and reducing pollution. PMID:26567845

  7. Solid-state electronic devices an introduction

    CERN Document Server

    Papadopoulos, Christo

    2014-01-01

    A modern and concise treatment of the solid state electronic devices that are fundamental to electronic systems and information technology is provided in this book. The main devices that comprise semiconductor integrated circuits are covered in a clear manner accessible to the wide range of scientific and engineering disciplines that are impacted by this technology. Catering to a wider audience is becoming increasingly important as the field of electronic materials and devices becomes more interdisciplinary, with applications in biology, chemistry and electro-mechanical devices (to name a few) becoming more prevalent. Updated and state-of-the-art advancements are included along with emerging trends in electronic devices and their applications. In addition, an appendix containing the relevant physical background will be included to assist readers from different disciplines and provide a review for those more familiar with the area. Readers of this book can expect to derive a solid foundation for understanding ...

  8. Oxide bipolar electronics: materials, devices and circuits

    International Nuclear Information System (INIS)

    Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; Von Wenckstern, Holger

    2016-01-01

    We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization. (topical review)

  9. Advanced Materials and Devices for Bioresorbable Electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Koo, Jahyun; Lee, Yoon Kyeung; Rogers, John A

    2018-05-15

    Recent advances in materials chemistry establish the foundations for unusual classes of electronic systems, characterized by their ability to fully or partially dissolve, disintegrate, or otherwise physically or chemically decompose in a controlled fashion after some defined period of stable operation. Such types of "transient" technologies may enable consumer gadgets that minimize waste streams associated with disposal, implantable sensors that disappear harmlessly in the body, and hardware-secure platforms that prevent unwanted recovery of sensitive data. This second area of opportunity, sometimes referred to as bioresorbable electronics, is of particular interest due to its ability to provide diagnostic or therapeutic function in a manner that can enhance or monitor transient biological processes, such as wound healing, while bypassing risks associated with extended device load on the body or with secondary surgical procedures for removal. Early chemistry research established sets of bioresorbable materials for substrates, encapsulation layers, and dielectrics, along with several options in organic and bio-organic semiconductors. The subsequent realization that nanoscale forms of device-grade monocrystalline silicon, such as silicon nanomembranes (m-Si NMs, or Si NMs) undergo hydrolysis in biofluids to yield biocompatible byproducts over biologically relevant time scales advanced the field by providing immediate routes to high performance operation and versatile, sophisticated levels of function. When combined with bioresorbable conductors, dielectrics, substrates, and encapsulation layers, Si NMs provide the basis for a broad, general class of bioresorbable electronics. Other properties of Si, such as its piezoresistivity and photovoltaic properties, allow other types of bioresorbable devices such as solar cells, strain gauges, pH sensors, and photodetectors. The most advanced bioresorbable devices now exist as complete systems with successful demonstrations of

  10. Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

    International Nuclear Information System (INIS)

    Zhao, Jing; Zhang, Yi; Krause, Hans-Joachim; Lee, Yong-Ho

    2014-01-01

    We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs

  11. Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

    Science.gov (United States)

    Zhao, Jing; Zhang, Yi; Lee, Yong-Ho; Krause, Hans-Joachim

    2014-05-01

    We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.

  12. 78 FR 16865 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Science.gov (United States)

    2013-03-19

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... certain electronic devices, including wireless communication devices, portable music and data processing...

  13. High temperature electronic gain device

    International Nuclear Information System (INIS)

    McCormick, J.B.; Depp, S.W.; Hamilton, D.J.; Kerwin, W.J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments is described. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube

  14. Study of total ionization dose effects in electronic devices

    International Nuclear Information System (INIS)

    Nidhin, T.S.; Bhattacharyya, Anindya; Gour, Aditya; Behera, R.P.; Jayanthi, T.

    2018-01-01

    Radiation effects in electronic devices are a major challenge in the dependable application developments of nuclear power plant instrumentation and control systems. The main radiation effects are total ionization dose (TID) effects, displacement damage dose (DDD) effects and single event effects (SEE). In this study, we are concentrating on TID effects in electronic devices. The focus of the study is mainly on SRAM based field programmable gate arrays (FPGA) along with that the devices of our interest are voltage regulators, flash memory and optocoupler. The experiments are conducted by exposing the devices to gamma radiation in power off condition and the degradation in the performances are analysed

  15. Pressurized waterproof case for electronic device

    KAUST Repository

    Berumen, Michael L.

    2013-01-01

    having an open top panel or face covered by a flexible, transparent membrane or the like for the operation of the touch-screen device within the case. A pressurizing system is provided for the case to pressurize the case and the electronic device therein

  16. Thermal modeling and design of electronic systems and devices

    International Nuclear Information System (INIS)

    Wirtz, R.A.; Lehmann, G.L.

    1990-01-01

    The thermal control electronic devices, particularly those in complex systems with high heat flux density, continues to be of interest to engineers involved in system cooling design and analysis. This volume contains papers presented at the 1990 ASME Winter Annual Meeting in two K-16 sponsored sessions: Empirical Modeling of Heat Transfer in Complex Electronic Systems and Design and Modeling of Heat Transfer Devices in High-Density Electronics. The first group deals with understanding the heat transfer processes in these complex systems. The second group focuses on the use of analysis techniques and empirically determined data in predicting device and system operating performance

  17. 78 FR 34669 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Science.gov (United States)

    2013-06-10

    ..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... importing wireless communication devices, portable music and data processing devices, and tablet computers... certain electronic devices, including wireless communication devices, portable music and data processing...

  18. Electronic cooling using thermoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zebarjadi, M., E-mail: m.zebarjadi@rutgers.edu [Department of Mechanical and Aerospace Engineering, Rutgers University, Piscataway, New Jersey 08854 (United States); Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States)

    2015-05-18

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  19. DEVICES FOR COOLING ELECTRONIC CIRCUIT BOARDS

    OpenAIRE

    T. A. Ismailov; D. V. Evdulov; A. G. Mustafaev; D. K. Ramazanova

    2014-01-01

    In the work described structural variants of devices for cooling electronic circuit boards, made on the basis of thermoelectric batteries and consumable working substances, implementing uneven process of removing heat from heat-generating components. A comparison of temperature fields of electronic circuit simulator with his uniform and non-uniform cooling. 

  20. DEVICES FOR COOLING ELECTRONIC CIRCUIT BOARDS

    Directory of Open Access Journals (Sweden)

    T. A. Ismailov

    2014-01-01

    Full Text Available In the work described structural variants of devices for cooling electronic circuit boards, made on the basis of thermoelectric batteries and consumable working substances, implementing uneven process of removing heat from heat-generating components. A comparison of temperature fields of electronic circuit simulator with his uniform and non-uniform cooling. 

  1. INTERFACE ELECTRONIC MEDICAL CARD ON MOBILE DEVICE

    Directory of Open Access Journals (Sweden)

    Y. L. Nechyporenko

    2013-05-01

    Full Text Available The concept designed by electronic medical card for heterogeneous environment of medical information systems at various levels. Appropriate model and technical solution. Done evaluating operating systems for mobile devices. Designed and produced by the project mobile application on Android OS as an electronic medical record on a Tablet PC Acer.

  2. Optical Biosensors: A Revolution Towards Quantum Nanoscale Electronics Device Fabrication

    Directory of Open Access Journals (Sweden)

    D. Dey

    2011-01-01

    Full Text Available The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

  3. Robust Optimal Design of Quantum Electronic Devices

    Directory of Open Access Journals (Sweden)

    Ociel Morales

    2018-01-01

    Full Text Available We consider the optimal design of a sequence of quantum barriers, in order to manufacture an electronic device at the nanoscale such that the dependence of its transmission coefficient on the bias voltage is linear. The technique presented here is easily adaptable to other response characteristics. There are two distinguishing features of our approach. First, the transmission coefficient is determined using a semiclassical approximation, so we can explicitly compute the gradient of the objective function. Second, in contrast with earlier treatments, manufacturing uncertainties are incorporated in the model through random variables; the optimal design problem is formulated in a probabilistic setting and then solved using a stochastic collocation method. As a measure of robustness, a weighted sum of the expectation and the variance of a least-squares performance metric is considered. Several simulations illustrate the proposed technique, which shows an improvement in accuracy over 69% with respect to brute-force, Monte-Carlo-based methods.

  4. Recent progress in power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Yasuhiko; Yatsuo, Tsutomu

    1987-02-01

    Recent progress and future trends of power semiconductor devices (especially with respect to motor speed control) were described. Conventional discrete devices such as thyristors, bipolar transistors, unipolar transistors and Bi-MOS devices were referenced to. Reference was also made to High Voltage ICs. There has been steady progress with each of these power devices in current carrying capability, voltage blocking capability and switching speed. The Bipolar-MOS integreated device and the High Voltage IC are particularly interesting because their abilities and performances are much enhanced by skillful combination with conventional discrete devices. However, no one device meets all the needs, and it will always be necessary to select the right device for a specific task. (11 figs, 35 refs)

  5. Reactor core performance calculating device

    International Nuclear Information System (INIS)

    Tominaga, Kenji; Bando, Masaru; Sano, Hiroki; Maruyama, Hiromi.

    1995-01-01

    The device of the present invention can calculate a power distribution efficiently at high speed by a plurality of calculation means while taking an amount of the reactor state into consideration. Namely, an input device takes data from a measuring device for the amount of the reactor core state such as a large number of neutron detectors disposed in the reactor core for monitoring the reactor state during operation. An input data distribution device comprises a state recognition section and a data distribution section. The state recognition section recognizes the kind and amount of the inputted data and information of the calculation means. The data distribution section analyzes the characteristic of the inputted data, divides them into a several groups, allocates them to each of the calculation means for the purpose of calculating the reactor core performance efficiently at high speed based on the information from the state recognition section. A plurality of the calculation means calculate power distribution of each of regions based on the allocated inputted data, to determine the power distribution of the entire reactor core. As a result, the reactor core can be evaluated at high accuracy and at high speed irrespective of the whole reactor core or partial region. (I.S.)

  6. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  7. Pressurized waterproof case for electronic device

    KAUST Repository

    Berumen, Michael L.

    2013-01-31

    The pressurized waterproof case for an electronic device is particularly adapted for the waterproof containment and operation of a touch-screen computer or the like therein at some appreciable water depth. The case may be formed as an enclosure having an open top panel or face covered by a flexible, transparent membrane or the like for the operation of the touch-screen device within the case. A pressurizing system is provided for the case to pressurize the case and the electronic device therein to slightly greater than ambient in order to prevent the external water pressure from bearing against the transparent membrane and pressing it against the touch screen, thereby precluding operation of the touch screen device within the case. The pressurizing system may be a small gas cartridge (e.g., CO2), or may be provided from an external source, such as the diver\\'s breathing air. A pressure relief valve is also provided.

  8. 77 FR 60720 - Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data...

    Science.gov (United States)

    2012-10-04

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data Processing Devices, and Tablet Computers... communication devices, portable music and data processing devices, and tablet computers, imported by Apple Inc...

  9. 77 FR 70464 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Science.gov (United States)

    2012-11-26

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... wireless communication devices, portable music and data processing devices, and tablet computers, by reason...

  10. Organic electronic devices using phthalimide compounds

    Science.gov (United States)

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  11. Plasmonically enhanced hot electron based photovoltaic device.

    Science.gov (United States)

    Atar, Fatih B; Battal, Enes; Aygun, Levent E; Daglar, Bihter; Bayindir, Mehmet; Okyay, Ali K

    2013-03-25

    Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths.

  12. SU-F-T-486: A Simple Approach to Performing Light Versus Radiation Field Coincidence Quality Assurance Using An Electronic Portal Imaging Device (EPID)

    Energy Technology Data Exchange (ETDEWEB)

    Herchko, S; Ding, G [Vanderbilt University, Nashville, TN (United States)

    2016-06-15

    Purpose: To develop an accurate, straightforward, and user-independent method for performing light versus radiation field coincidence quality assurance utilizing EPID images, a simple phantom made of readily-accessible materials, and a free software program. Methods: A simple phantom consisting of a blocking tray, graph paper, and high-density wire was constructed. The phantom was used to accurately set the size of a desired light field and imaged on the electronic portal imaging device (EPID). A macro written for use in ImageJ, a free image processing software, was then use to determine the radiation field size utilizing the high density wires on the phantom for a pixel to distance calibration. The macro also performs an analysis on the measured radiation field utilizing the tolerances recommended in the AAPM Task Group #142. To verify the accuracy of this method, radiochromic film was used to qualitatively demonstrate agreement between the film and EPID results, and an additional ImageJ macro was used to quantitatively compare the radiation field sizes measured both with the EPID and film images. Results: The results of this technique were benchmarked against film measurements, which have been the gold standard for testing light versus radiation field coincidence. The agreement between this method and film measurements were within 0.5 mm. Conclusion: Due to the operator dependency associated with tracing light fields and measuring radiation fields by hand when using film, this method allows for a more accurate comparison between the light and radiation fields with minimal operator dependency. Removing the need for radiographic or radiochromic film also eliminates a reoccurring cost and increases procedural efficiency.

  13. SU-F-T-486: A Simple Approach to Performing Light Versus Radiation Field Coincidence Quality Assurance Using An Electronic Portal Imaging Device (EPID)

    International Nuclear Information System (INIS)

    Herchko, S; Ding, G

    2016-01-01

    Purpose: To develop an accurate, straightforward, and user-independent method for performing light versus radiation field coincidence quality assurance utilizing EPID images, a simple phantom made of readily-accessible materials, and a free software program. Methods: A simple phantom consisting of a blocking tray, graph paper, and high-density wire was constructed. The phantom was used to accurately set the size of a desired light field and imaged on the electronic portal imaging device (EPID). A macro written for use in ImageJ, a free image processing software, was then use to determine the radiation field size utilizing the high density wires on the phantom for a pixel to distance calibration. The macro also performs an analysis on the measured radiation field utilizing the tolerances recommended in the AAPM Task Group #142. To verify the accuracy of this method, radiochromic film was used to qualitatively demonstrate agreement between the film and EPID results, and an additional ImageJ macro was used to quantitatively compare the radiation field sizes measured both with the EPID and film images. Results: The results of this technique were benchmarked against film measurements, which have been the gold standard for testing light versus radiation field coincidence. The agreement between this method and film measurements were within 0.5 mm. Conclusion: Due to the operator dependency associated with tracing light fields and measuring radiation fields by hand when using film, this method allows for a more accurate comparison between the light and radiation fields with minimal operator dependency. Removing the need for radiographic or radiochromic film also eliminates a reoccurring cost and increases procedural efficiency.

  14. Remote Monitoring of Cardiac Implantable Electronic Devices.

    Science.gov (United States)

    Cheung, Christopher C; Deyell, Marc W

    2018-01-08

    Over the past decade, technological advancements have transformed the delivery of care for arrhythmia patients. From early transtelephonic monitoring to new devices capable of wireless and cellular transmission, remote monitoring has revolutionized device care. In this article, we review the current evolution and evidence for remote monitoring in patients with cardiac implantable electronic devices. From passive transmission of device diagnostics, to active transmission of patient- and device-triggered alerts, remote monitoring can shorten the time to diagnosis and treatment. Studies have shown that remote monitoring can reduce hospitalization and emergency room visits, and improve survival. Remote monitoring can also reduce the health care costs, while providing increased access to patients living in rural or marginalized communities. Unfortunately, as many as two-thirds of patients with remote monitoring-capable devices do not use, or are not offered, this feature. Current guidelines recommend remote monitoring and interrogation, combined with annual in-person evaluation in all cardiac device patients. Remote monitoring should be considered in all eligible device patients and should be considered standard of care. Copyright © 2018 Canadian Cardiovascular Society. Published by Elsevier Inc. All rights reserved.

  15. Progress in Group III nitride semiconductor electronic devices

    International Nuclear Information System (INIS)

    Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

    2012-01-01

    Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

  16. A device for electron gun emittance measurement

    International Nuclear Information System (INIS)

    Aune, B.; Corveller, P.; Jablonka, M.; Joly, J.M.

    1985-05-01

    In order to improve the final emittance of the beam delivered by the ALS electron linac a new gun is going to be installed. To measure its emittance and evaluate the contribution of different factors to emittance growth we have developed an emittance measurement device. We describe the experimental and mathematical procedure we have followed, and give some results of measurements

  17. Conceptual design and simulation investigation of an electronic cooling device powered by hot electrons

    International Nuclear Information System (INIS)

    Su, Guozhen; Zhang, Yanchao; Cai, Ling; Su, Shanhe; Chen, Jincan

    2015-01-01

    Most electronic cooling devices are powered by an external bias applied between the cold and the hot reservoirs. Here we propose a new concept of electronic cooling, in which cooling is achieved by using a reservoir of hot electrons as the power source. The cooling device incorporates two energy filters with the Lorentzian transmission function to respectively select low- and high-energy electrons for transport. Based on the proposed model, we analyze the performances of the device varying with the resonant levels and half widths of two energy filters and establish the optimal configuration of the cooling device. It is believed that such a novel device may be practically used in some nano-energy fields. - Highlights: • A new electronic cooling device powered by hot electrons is proposed. • Two energy filters are employed to select the electrons for transport. • The effects of the resonant levels and half widths of two filters are discussed. • The maximum cooling power and coefficient of performance are calculated. • The optimal configuration of the cooling device is determined.

  18. Reactor core performance estimating device

    International Nuclear Information System (INIS)

    Tanabe, Akira; Yamamoto, Toru; Shinpuku, Kimihiro; Chuzen, Takuji; Nishide, Fusayo.

    1995-01-01

    The present invention can autonomously simplify a neural net model thereby enabling to conveniently estimate various amounts which represents reactor core performances by a simple calculation in a short period of time. Namely, a reactor core performance estimation device comprises a nerve circuit net which divides the reactor core into a large number of spacial regions, and receives various physical amounts for each region as input signals for input nerve cells and outputs estimation values of each amount representing the reactor core performances as output signals of output nerve cells. In this case, the nerve circuit net (1) has a structure of extended multi-layered model having direct coupling from an upper stream layer to each of downstream layers, (2) has a forgetting constant q in a corrected equation for a joined load value ω using an inverse error propagation method, (3) learns various amounts representing reactor core performances determined using the physical models as teacher signals, (4) determines the joined load value ω decreased as '0' when it is to less than a predetermined value upon learning described above, and (5) eliminates elements of the nerve circuit net having all of the joined load value decreased to 0. As a result, the neural net model comprises an autonomously simplifying means. (I.S.)

  19. Electronic medical devices: a primer for pathologists.

    Science.gov (United States)

    Weitzman, James B

    2003-07-01

    Electronic medical devices (EMDs) with downloadable memories, such as implantable cardiac pacemakers, defibrillators, drug pumps, insulin pumps, and glucose monitors, are now an integral part of routine medical practice in the United States, and functional organ replacements, such as the artificial heart, pancreas, and retina, will most likely become commonplace in the near future. Often, EMDs end up in the hands of the pathologist as a surgical specimen or at autopsy. No established guidelines for systematic examination and reporting or comprehensive reviews of EMDs currently exist for the pathologist. To provide pathologists with a general overview of EMDs, including a brief history; epidemiology; essential technical aspects, indications, contraindications, and complications of selected devices; potential applications in pathology; relevant government regulations; and suggested examination and reporting guidelines. Articles indexed on PubMed of the National Library of Medicine, various medical and history of medicine textbooks, US Food and Drug Administration publications and product information, and specifications provided by device manufacturers. Studies were selected on the basis of relevance to the study objectives. Descriptive data were selected by the author. Suggested examination and reporting guidelines for EMDs received as surgical specimens and retrieved at autopsy. Electronic medical devices received as surgical specimens and retrieved at autopsy are increasing in number and level of sophistication. They should be systematically examined and reported, should have electronic memories downloaded when indicated, will help pathologists answer more questions with greater certainty, and should become an integral part of the formal knowledge base, research focus, training, and practice of pathology.

  20. Development of beam diagnostic devices for characterizing electron guns

    International Nuclear Information System (INIS)

    Bhattacharjee, D.; Tiwari, R.; Jayaprakash, D.; Mishra, R.L.; Sarukte, H.; Waghmare, A.; Thakur, N.; Dixit, K.P.

    2015-01-01

    The electron guns for the DC accelerators and RF Linacs are designed and developed at EBC/APPD/BARC, Kharghar. These electron guns need to be characterized for its design and performance. Two test benches were developed for characterizing the electron guns. Various beam diagnostic devices for measuring beam currents and beam sizes were developed. Conical faraday cup, segmented faraday cup, slit scanning bellows movement arrangement, multi-plate beam size measurement setup, multi- wire beam size measurement setup, Aluminum foil puncture assembly etc. were developed and used. The paper presents the in-house development of various beam diagnostics for characterizing electron guns and their use. (author)

  1. Electronic device for endosurgical skills training (EDEST): study of reliability.

    Science.gov (United States)

    Pagador, J B; Uson, J; Sánchez, M A; Moyano, J L; Moreno, J; Bustos, P; Mateos, J; Sánchez-Margallo, F M

    2011-05-01

    Minimally Invasive Surgery procedures are commonly used in many surgical practices, but surgeons need specific training models and devices due to its difficulty and complexity. In this paper, an innovative electronic device for endosurgical skills training (EDEST) is presented. A study on reliability for this device was performed. Different electronic components were used to compose this new training device. The EDEST was focused on two basic laparoscopic tasks: triangulation and coordination manoeuvres. A configuration and statistical software was developed to complement the functionality of the device. A calibration method was used to assure the proper work of the device. A total of 35 subjects (8 experts and 27 novices) were used to check the reliability of the system using the MTBF analysis. Configuration values for triangulation and coordination exercises were calculated as 0.5 s limit threshold and 800-11,000 lux range of light intensity, respectively. Zero errors in 1,050 executions (0%) for triangulation and 21 errors in 5,670 executions (0.37%) for coordination were obtained. A MTBF of 2.97 h was obtained. The results show that the reliability of the EDEST device is acceptable when used under previously defined light conditions. These results along with previous work could demonstrate that the EDEST device can help surgeons during first training stages.

  2. Guide to state-of-the-art electron devices

    CERN Document Server

    2013-01-01

    Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IEEE Electron Devices Committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists...

  3. Electronic equipment and software for device 'FAZA'

    International Nuclear Information System (INIS)

    Avdeev, S.P.; Karnaukhov, V.A.; Kuznetsov, V.D.; Petrov, L.A.; Oeschler, H.; Lips, F.; Bart, R.

    1992-01-01

    Electronic equipment and software for the device FAZA are described. The device, designed for studying the nuclear multifragmentation process, consists of 5 time-of-flight telescopes, a position-sensitive avalanche chamber and 58 PM tubes. The time resolution of the time-of-flight telescopes is 0.5 ns, which allows a velocity resolution of 1.5%. The spatial resolution of the large avalanche counter is 4 mm, which allows angular resolution of 1 deg. Analogue signals from each PM tube come to two ADCs, to which strobes are supplied with a 400 ns shift. It allows codes corresponding to Cherenkov radiation and deexcitation of CsJ(Tl) to be distinguished in a two-dimensional plot. 8 refs.; 2 figs

  4. Multiparametric electronic devices based on nuclear tracks

    Energy Technology Data Exchange (ETDEWEB)

    Fink, D. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany)], E-mail: FINK@HMI.DE; Saad, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Basic Science Department, Faculty of Science, Al Balqa University, Salt (Jordan); Dhamodaran, S. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Chandra, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Fahrner, W.R. [Chair of Electronic Devices, Institute of Electrotechnique, Fernuniversitaet, Hagen (Germany); Hoppe, K. [South Westfalia University of Applied Sciences, Hagen (Germany); Chadderton, L.T. [Institute of Advanced Studies, ANU Canberra, GPO Box 4, ACT (Australia)

    2008-08-15

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r{sub ROI} around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1{mu}m leading to nanometric TEMPOS structures.

  5. Multiparametric electronic devices based on nuclear tracks

    International Nuclear Information System (INIS)

    Fink, D.; Saad, A.; Dhamodaran, S.; Chandra, A.; Fahrner, W.R.; Hoppe, K.; Chadderton, L.T.

    2008-01-01

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r ROI around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1μm leading to nanometric TEMPOS structures

  6. 14 CFR 91.21 - Portable electronic devices.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

  7. 46 CFR 28.260 - Electronic position fixing devices.

    Science.gov (United States)

    2010-10-01

    ... Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in length must be equipped with an electronic position fixing device capable of providing accurate fixes for the... 46 Shipping 1 2010-10-01 2010-10-01 false Electronic position fixing devices. 28.260 Section 28...

  8. Non-fullerene electron acceptors for organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Jenekhe, Samson A.; Li, Haiyan; Earmme, Taeshik; Ren, Guoqiang

    2017-11-07

    Non-fullerene electron acceptors for highly efficient organic photovoltaic devices are described. The non-fullerene electron acceptors have an extended, rigid, .pi.-conjugated electron-deficient framework that can facilitate exciton and charge derealization. The non-fullerene electron acceptors can physically mix with a donor polymer and facilitate improved electron transport. The non-fullerene electron acceptors can be incorporated into organic electronic devices, such as photovoltaic cells.

  9. Electronic system of TBR tokamak device

    International Nuclear Information System (INIS)

    Silva, R.P. da.

    1980-01-01

    The electronics developed as a part of the TBR project, which involves the construction of a small tokamak at the Physics Institute of the University of Sao Paulo, is described. On the basis of tokamak parameter values, the electronics for the toroidal field, ohmic/heating and vertical field systems is presented, including capacitors bank, switches, triggering circuits and power supplies. A controlled power oscilator used in discharge cleaning and pre-ionization is also described. The performance of the system as a function of the desired plasma parameters is discussed. (Author) [pt

  10. 76 FR 45860 - In the Matter of Certain Electronic Devices, Including Wireless Communication Devices, Portable...

    Science.gov (United States)

    2011-08-01

    ..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... electronic devices, including wireless communication devices, portable music and data processing devices, and...''). The complaint further alleges that an industry in the United States exists or is in the process of...

  11. High Performance Electronics on Flexible Silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  12. Development of an irradiation device for electron beam wastewater treatment

    International Nuclear Information System (INIS)

    Rela, Paulo Roberto

    2003-01-01

    When domestic or industrial effluents with synthetic compounds are disposed without an adequate treatment, they impact negatively the environment with damages to aquatic life and for the human being. Both population and use of goods and services that contribute for the hazardous waste are growing. Hazardous regulations are becoming more restrictive and technologies, which do not destroy these products, are becoming less acceptable. The electron beam radiation process is an advanced oxidation process, that produces highly reactive radicals resulting in mineralization of the contaminant. In this work was developed an irradiation system in order to optimize the interaction of electron beam delivered from the accelerator with the processed effluent. It is composed by an irradiation device where the effluent presents to the electron beam in an up flow stream and a process control unit that uses the calorimetric principle. The developed irradiation device has a different configuration from the devices used by others researchers that are working with this technology. It was studied the technical and economic feasibility, comparing with the literature the results of the irradiation device demonstrated that it has a superior performance, becoming an process for use in disinfection and degradation of hazardous organic compounds of wastewater from domestic and industrial origin, contributing as an alternative technology for Sanitary Engineering. (author)

  13. Device for the radiation centering at electron emitters

    International Nuclear Information System (INIS)

    Panzer, S.; Ardenne, T. von; Jessat, K.; Bahr, G.

    1985-01-01

    The invention has been directed at a device for a simplified and reliable centering of electron beams at electron emitters in particular for welding and thermal surface modifications. The electron beam has been focussed relatively to an electron-optical lens. A movable masked electron detector has been arranged at the electron beam deflection plane. The electron detector is connected with an electronic data evaluation equipment

  14. Investigation of ceramic devices by analytical electron microscopy techniques

    International Nuclear Information System (INIS)

    Shiojiri, M.; Saijo, H.; Isshiki, T.; Kawasaki, M.; Yoshioka, T.; Sato, S.; Nomura, T.

    1999-01-01

    Ceramics are widely used as capacitors and varistors. Their electrical properties depend on the structure, which is deeply influenced not only by the composition of raw materials and additives but also by heating treatments in the production process. This paper reviews our investigations of SrTiO 3 ceramic devices, which have been performed using various microscopy techniques such as high-resolution transmission electron microscopy (HRTEM), cathodoluminescence scanning electron microscopy (CLSEM), field emission SEM (FE-SEM), energy dispersive X-ray spectroscopy (EDS), electron energy-loss spectroscopy (EELS) and high angle annular dark field (HAADF) imaging method in a FE-(scanning) transmission electron microscope(FE-(S)TEM). (author)

  15. Economic analysis of evolution/devolution of electronic devices functionality

    Directory of Open Access Journals (Sweden)

    Esipov A. S.

    2017-12-01

    Full Text Available the researcher of this article has presented the analysis of evolution/devolution of electronic devices functionality as well as the analysis of the current situation at the computers and mobile devices market, and some thoughts about new products. Is a newer device better? Are corporations producing really new devices or they are only the improvement of old ones.

  16. 3D Design Tools for Vacuum Electron Devices

    International Nuclear Information System (INIS)

    Levush, Baruch

    2003-01-01

    A reduction of development costs will have a significant impact on the total cost of the vacuum electron devices. Experimental testing cycles can be reduced or eliminated through the use of simulation-based design methodology, thereby reducing the time and cost of development. Moreover, by use of modern optimization tools for automating the process of seeking specific solution parameters and for studying dependencies of performance on parameters, new performance capabilities can be achieved, without resorting to expensive cycles of hardware fabrication and testing. Simulation-based-design will also provide the basis for sensitivity studies for determining the manufacturing tolerances associated with a particular design. Since material properties can have a critical effect on the performance of the vacuum electron devices, the design tools require precise knowledge of material characteristics, such as dielectric properties of the support rods, loss profile etc. Sensitivity studies must therefore include the effects of materials properties variation on device performance. This will provide insight for choosing the proper technological processes in order to achieve these tolerances, which is of great importance for achieving cost reduction. A successful design methodology depends on the development of accurate and efficient design tools with predictive capabilities. These design tools must be based on realistic models capable of high fidelity representation of geometry and materials, they must have optimization capabilities, and they must be easy to use

  17. Electronic Payments using Mobile Communication Devices

    NARCIS (Netherlands)

    Waaij, B.D. van der; Siljee, B.I.J.; Broekhuijsen, B.J.; Ponsioen, C.; Maas, A.; Aten, R.M.; Hoepman, J.H.; Loon, J.H. van; Smit, M.

    2009-01-01

    A method of making a payment uses a first mobile communication device (1) and a second mobile communication device (2), each mobile communication device being provided with a respective near field communication unit (11, 21) and at least one of the mobile communication devices being provided with an

  18. [Electronic Device for Retinal and Iris Imaging].

    Science.gov (United States)

    Drahanský, M; Kolář, R; Mňuk, T

    This paper describes design and construction of a new device for automatic capturing of eye retina and iris. This device has two possible ways of utilization - either for biometric purposes (persons recognition on the base of their eye characteristics) or for medical purposes as supporting diagnostic device. eye retina, eye iris, device, acquisition, image.

  19. Application of high power microwave vacuum electron devices

    International Nuclear Information System (INIS)

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  20. MEMS/Electronic Device Design and Characterization Facility

    Data.gov (United States)

    Federal Laboratory Consortium — This facility allows DoD to design and characterize state-of-the-art microelectromechanical systems (MEMS) and electronic devices. Device designers develop their own...

  1. Performance test of wet type decontamination device

    International Nuclear Information System (INIS)

    Lee, E. P.; Kim, E. G.; Min, D. K.; Jun, Y. B.; Lee, H. K.; Seu, H. S.; Kwon, H. M.; Hong, K.P.

    2003-01-01

    The intervention area located at rear hot cell can be contaminated by hot cell maintenance work. For effective decontamination of the intervention floor a wet type decontamination device was developed. The device was assembled with a brush rotating part, a washing liquid supplying part, an intake part for recovering contaminated liquid and a device moving cart part. The device was made of stainless steel for easy decontamination and corrosion resistance. The function test carried out at intervention area of the PIE facility showed good performance

  2. Quality assurance for electronic portal imaging devices

    International Nuclear Information System (INIS)

    Shalev, S.; Rajapakshe, R.; Gluhchev, G.; Luchka, K.

    1997-01-01

    Electronic portal imaging devices (EPIDS) are assuming an ever-increasing role in the verification of radiation treatment accuracy. They are used both in a passive capacity, for the determination of field displacement distributions (''setup errors''), and also in an active role whereby the patient setup is corrected on the basis of electronic portal images. In spite of their potential impact on the precision of patient treatment, there are few quality assurance procedures available, and most of the EPIDS in clinical use are subject, at best, to only perfunctory quality assurance. The goals of this work are (a) to develop an objective and reproducible test for EPID image quality on the factory floor and during installation of the EPID on site; (b) to provide the user with a simple and accurate tool for acceptance, commissioning, and routine quality control; and (c) to initiate regional, national and international collaboration in the implementation of standardized, objective, and automated quality assurance procedures. To this end we have developed an automated test in which a simple test object is imaged daily, and the spatial and contrast resolution of the EPID are automatically evaluated in terms of ''acceptable'', ''warning'' and ''stop'' criteria. Our experience over two years shows the test to be highly sensitive, reproducible, and inexpensive in time and effort. Inter-institutional trials are under way in Canada, US and Europe which indicate large variations in EPID image quality from one EPID to another, and from one center to another. We expect the new standardized quality assurance procedure to lead to improved, and consistent image quality, increased operator acceptance of the technology, and agreement on uniform standards by equipment suppliers and health care agencies. (author)

  3. 3D Printed structural electronics: embedding and connecting electronic components into freeform electronic devices

    NARCIS (Netherlands)

    Maalderink, H.H.H.; Bruning, F.B.J.; Schipper, M.M.R. de; Werff, J.J.J. van der; Germs, W.W.C.; Remmers, J.J.C.; Meinders, E.R.

    2018-01-01

    The need for personalised and smart products drives the development of structural electronics with mass-customisation capability. A number of challenges need to be overcome in order to address the potential of complete free form manufacturing of electronic devices. One key challenge is the

  4. 3D Printed structural electronics : embedding and connecting electronic components into freeform electronic devices

    NARCIS (Netherlands)

    Maalderink, H.H.; Bruning, F.B.J.; de Schipper, M.R.; van der Werff, J.J.; Germs, W.C.; Remmers, J.J.C.; Meinders, E.R.

    2018-01-01

    The need for personalised and smart products drives the development of structural electronics with mass-customisation capability. A number of challenges need to be overcome in order to address the potential of complete free form manufacturing of electronic devices. One key challenge is the

  5. Flexible Organic Electronics in Biology: Materials and Devices.

    Science.gov (United States)

    Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

    2015-12-09

    At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  7. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

    KAUST Repository

    Khan, Jafar Iqbal; Adhikari, Aniruddha; Sun, Jingya; Priante, Davide; Bose, Riya; Shaheen, Basamat; Ng, Tien Khee; Zhao, Chao; Bakr, Osman; Ooi, Boon S.; Mohammed, Omar F.

    2016-01-01

    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A

  8. Performance of Installed Cooking Exhaust Devices

    Energy Technology Data Exchange (ETDEWEB)

    Singer, Brett C.; Delp, William W.; Apte, Michael G.; Price, Philip N.

    2011-11-01

    The performance metrics of airflow, sound, and combustion product capture efficiency (CE) were measured for a convenience sample of fifteen cooking exhaust devices, as installed in residences. Results were analyzed to quantify the impact of various device- and installation-dependent parameters on CE. Measured maximum airflows were 70% or lower than values noted on product literature for 10 of the devices. Above-the-cooktop devices with flat bottom surfaces (no capture hood) – including exhaust fan/microwave combination appliances – were found to have much lower CE at similar flow rates, compared to devices with capture hoods. For almost all exhaust devices and especially for rear-mounted downdraft exhaust and microwaves, CE was substantially higher for back compared with front burner use. Flow rate, and the extent to which the exhaust device extends over the burners that are in use, also had a large effect on CE. A flow rate of 95 liters per second (200 cubic feet per minute) was necessary, but not sufficient, to attain capture efficiency in excess of 75% for the front burners. A-weighted sound levels in kitchens exceeded 57 dB when operating at the highest fan setting for all 14 devices evaluated for sound performance.

  9. Wearable Performance Devices in Sports Medicine.

    Science.gov (United States)

    Li, Ryan T; Kling, Scott R; Salata, Michael J; Cupp, Sean A; Sheehan, Joseph; Voos, James E

    2016-01-01

    Wearable performance devices and sensors are becoming more readily available to the general population and athletic teams. Advances in technology have allowed individual endurance athletes, sports teams, and physicians to monitor functional movements, workloads, and biometric markers to maximize performance and minimize injury. Movement sensors include pedometers, accelerometers/gyroscopes, and global positioning satellite (GPS) devices. Physiologic sensors include heart rate monitors, sleep monitors, temperature sensors, and integrated sensors. The purpose of this review is to familiarize health care professionals and team physicians with the various available types of wearable sensors, discuss their current utilization, and present future applications in sports medicine. Data were obtained from peer-reviewed literature through a search of the PubMed database. Included studies searched development, outcomes, and validation of wearable performance devices such as GPS, accelerometers, and physiologic monitors in sports. Clinical review. Level 4. Wearable sensors provide a method of monitoring real-time physiologic and movement parameters during training and competitive sports. These parameters can be used to detect position-specific patterns in movement, design more efficient sports-specific training programs for performance optimization, and screen for potential causes of injury. More recent advances in movement sensors have improved accuracy in detecting high-acceleration movements during competitive sports. Wearable devices are valuable instruments for the improvement of sports performance. Evidence for use of these devices in professional sports is still limited. Future developments are needed to establish training protocols using data from wearable devices. © 2015 The Author(s).

  10. Electron beam directed energy device and methods of using same

    Science.gov (United States)

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  11. Ion age transport: developing devices beyond electronics

    Science.gov (United States)

    Demming, Anna

    2014-03-01

    There is more to current devices than conventional electronics. Increasingly research into the controlled movement of ions and molecules is enabling a range of new technologies. For example, as Weihua Guan, Sylvia Xin Li and Mark Reed at Yale University explain, 'It offers a unique opportunity to integrate wet ionics with dry electronics seamlessly'. In this issue they provide an overview of voltage-gated ion and molecule transport in engineered nanochannels. They cover the theory governing these systems and fabrication techniques, as well as applications, including biological and chemical analysis, and energy conversion [1]. Studying the movement of particles in nanochannels is not new. The transport of materials in rock pores led Klinkenberg to describe an analogy between diffusion and electrical conductivity in porous rocks back in 1951 [2]. And already in 1940, Harold Abramson and Manuel Gorin noted that 'When an electric current is applied across the living human skin, the skin may be considered to act like a system of pores through which transfer of substances like ragweed pollen extract may be achieved both by electrophoretic and by diffusion phenomena' [3]. Transport in living systems through pore structures on a much smaller scale has attracted a great deal of research in recent years as well. The selective transport of ions and small organic molecules across the cell membrane facilitates a number of functions including communication between cells, nerve conduction and signal transmission. Understanding these processes may benefit a wide range of potential applications such as selective separation, biochemical sensing, and controlled release and drug delivery processes. In Germany researchers have successfully demonstrated controlled ionic transport through nanopores functionalized with amine-terminated polymer brushes [4]. The polymer nanobrushes swell and shrink in response to changes in temperature, thus opening and closing the nanopore passage to ionic

  12. Performance Tests for Bubble Blockage Device

    International Nuclear Information System (INIS)

    Ha, Kwang Soon; Wi, Kyung Jin; Park, Rae Joon; Wan, Han Seong

    2014-01-01

    Postulated severe core damage accidents have a high threat risk for the safety of human health and jeopardize the environment. Versatile measures have been suggested and applied to mitigate severe accidents in nuclear power plants. To improve the thermal margin for the severe accident measures in high-power reactors, engineered corium cooling systems involving boiling-induced two-phase natural circulation have been proposed for decay heat removal. A boiling-induced natural circulation flow is generated in a coolant path between a hot vessel wall and cold coolant reservoir. In general, it is possible for some bubbles to be entrained in the natural circulation loop. If some bubbles entrain in the liquid phase flow passage, flow instability may occur, that is, the natural circulation mass flow rate may be oscillated. A new device to block the entraining bubbles is proposed and verified using air-water test loop. To avoid bubbles entrained in the natural circulation flow loop, a new device was proposed and verified using an air-water test loop. The air injection and liquid circulation loop was prepared, and the tests for the bubble blockage devices were performed by varying the geometry and shape of the devices. The performance of the bubble blockage device was more effective as the area ratio of the inlet to the down-comer increased, and the device height decreased. If the device has a rim to generate a vortex zone, the bubbles will be most effectively blocked

  13. Molecular electronics with single molecules in solid-state devices

    DEFF Research Database (Denmark)

    Moth-Poulsen, Kasper; Bjørnholm, Thomas

    2009-01-01

    The ultimate aim of molecular electronics is to understand and master single-molecule devices. Based on the latest results on electron transport in single molecules in solid-state devices, we focus here on new insights into the influence of metal electrodes on the energy spectrum of the molecule...

  14. Optical sensor array platform based on polymer electronic devices

    Science.gov (United States)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  15. Analysis of patient setup accuracy using electronic portal imaging device

    International Nuclear Information System (INIS)

    Onogi, Yuzo; Aoki, Yukimasa; Nakagawa, Keiichi

    1996-01-01

    Radiation therapy is performed in many fractions, and accurate patient setup is very important. This is more significant nowadays because treatment planning and radiation therapy are more precisely performed. Electronic portal imaging devices and automatic image comparison algorithms let us analyze setup deviations quantitatively. With such in mind we developed a simple image comparison algorithm. Using 2459 electronic verification images (335 ports, 123 treatment sites) generated during the past three years at our institute, we evaluated the results of the algorithm, and analyzed setup deviations according to the area irradiated, use of a fixing device (shell), and arm position. Calculated setup deviation was verified visually and their fitness was classified into good, fair, bad, and incomplete. The result was 40%, 14%, 22%, 24% respectively. Using calculated deviations classified as good (994 images), we analyzed setup deviations. Overall setup deviations described in 1 SD along axes x, y, z, was 1.9 mm, 2.5 mm, 1.7 mm respectively. We classified these deviations into systematic and random components, and found that random error was predominant in our institute. The setup deviations along axis y (cranio-caudal direction) showed larger distribution when treatment was performed with the shell. Deviations along y (cranio-caudal) and z (anterior-posterior) had larger distribution when treatment occurred with the patient's arm elevated. There was a significant time-trend error, whose deviations become greater with time. Within all evaluated ports, 30% showed a time-trend error. Using an electronic portal imaging device and automatic image comparison algorithm, we are able to analyze setup deviations more precisely and improve setup method based on objective criteria. (author)

  16. Patient perspective on remote monitoring of cardiovascular implantable electronic devices

    DEFF Research Database (Denmark)

    Versteeg, H; Pedersen, Susanne S.; Mastenbroek, M H

    2014-01-01

    -implantation, other check-ups are performed remotely. Patients are asked to complete questionnaires at five time points during the 2-year follow-up. CONCLUSION: The REMOTE-CIED study will provide insight into the patient perspective on remote monitoring in ICD patients, which could help to support patient......BACKGROUND: Remote patient monitoring is a safe and effective alternative for the in-clinic follow-up of patients with cardiovascular implantable electronic devices (CIEDs). However, evidence on the patient perspective on remote monitoring is scarce and inconsistent. OBJECTIVES: The primary...

  17. EMC, RF, and Antenna Systems in Miniature Electronic Devices

    DEFF Research Database (Denmark)

    Ruaro, Andrea

    Advanced techniques for the control of electromagnetic interference (EMI) and for the optimization of the electromagnetic compatibility (EMC) performance has been developed under the constraints typical of miniature electronic devices (MED). The electromagnetic coexistence of multiple systems....... The structure allows for effective suppression of radiation from the MED, while taking into consideration the integration and miniaturization aspects. To increase the sensitivity of the system, a compact LNA suitable for on-body applications has been developed. The LNA allows for an increase in the overall...

  18. Vacuum nanoelectronic devices novel electron sources and applications

    CERN Document Server

    Evtukh, Anatoliy; Yilmazoglu, Oktay; Mimura, Hidenori; Pavlidis, Dimitris

    2015-01-01

    Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments.  This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. Unique coverage of quantum physical results for electron-field emission and novel electron sourc...

  19. Bio/Nano Electronic Devices and Sensors

    National Research Council Canada - National Science Library

    Jones, W. K

    2008-01-01

    ...) Cold cathode microwave generator and ceramic electron multiplier-ceramic multiplier using a novel secondary electron yield materials of MgO and CNT was demonstrated as well as cooling structures...

  20. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

    2017-01-01

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

  1. Automatic shadowing device for electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, F W; Bogitch, S

    1960-01-01

    For the past ten years in the laboratory of the Department of Nuclear Medicine and Radiation Biology at the University of California, and before that at Rochester, New York, every evaporation was done with the aid of an automatic shadowing device. For several months the automatic shadowing device has been available at the Atomic Bomb Casualty Commission (ABCC) Hiroshima, Japan with the modifications described. 1 reference.

  2. Transparent oxide electronics from materials to devices

    CERN Document Server

    Martins, Rodrigo; Barquinha, Pedro; Pereira, Luis

    2012-01-01

    Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at lo

  3. Multilayered analog optical differentiating device: performance analysis on structural parameters.

    Science.gov (United States)

    Wu, Wenhui; Jiang, Wei; Yang, Jiang; Gong, Shaoxiang; Ma, Yungui

    2017-12-15

    Analogy optical devices (AODs) able to do mathematical computations have recently gained strong research interest for their potential applications as accelerating hardware in traditional electronic computers. The performance of these wavefront-processing devices is primarily decided by the accuracy of the angular spectral engineering. In this Letter, we show that the multilayer technique could be a promising method to flexibly design AODs according to the input wavefront conditions. As examples, various Si-SiO 2 -based multilayer films are designed that can precisely perform the second-order differentiation for the input wavefronts of different Fourier spectrum widths. The minimum number and thickness uncertainty of sublayers for the device performance are discussed. A technique by rescaling the Fourier spectrum intensity has been proposed in order to further improve the practical feasibility. These results are thought to be instrumental for the development of AODs.

  4. Scaling of ion implanted Si:P single electron devices

    International Nuclear Information System (INIS)

    Escott, C C; Hudson, F E; Chan, V C; Petersson, K D; Clark, R G; Dzurak, A S

    2007-01-01

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n + ) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number

  5. Scaling of ion implanted Si:P single electron devices

    Energy Technology Data Exchange (ETDEWEB)

    Escott, C C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Hudson, F E [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Chan, V C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Petersson, K D [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Clark, R G [Centre for Quantum Computer Technology, School of Physics, UNSW, Sydney, 2052 (Australia); Dzurak, A S [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia)

    2007-06-13

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n{sup +}) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number.

  6. Trend of Energy Saving in Electronic Devices for Research and Development

    Directory of Open Access Journals (Sweden)

    Rahmayanti R.

    2016-01-01

    Full Text Available In electronic industry, energy saving is one of the performance indicators of competitiveness beside price, speed, bandwidth and reliability. This affects research and development (R&D activity in mechatronic systems which uses electronic components and electronic systems. A review of trend of electronic devices technology development has been conducted with focus on energy saving. This review includes electronic devices, semiconductor, and nanotechnology. It can be concluded that the trend in electronic devices is mainly dictated by semiconductor technology development. The trend can be concluded as smaller size, lower voltage leading to energy saving, less heat, higher speed, more reliable, and cheaper. In accordance to such technology development, R&D activities in mechatronics especially in Indonesia is being pushed to make proper alignment.Some of such alignment actions are surface mount technology (SMT for installing surface mount devices components (SMD, design layout and SMD troubleshooting tools as well as human resources training and development.

  7. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    International Nuclear Information System (INIS)

    Chen, L.L.; Li, W.L.; Li, M.T.; Chu, B.

    2007-01-01

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m 2 at 8 V. At a luminance of 100 cd/m 2 , the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V oc ) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm 2 . And the short-circuit current (I sc ) of 92.5x10 -6 A/cm 2 , fill factor (FF) of 0.30 and power conversion efficiency (η e ) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices

  8. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Chen, L.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Institute of Functional Material Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun, 130024 (China); Li, W.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)]. E-mail: wllioel@yahoo.com.cn; Li, M.T. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Chu, B. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)

    2007-01-15

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m{sup 2} at 8 V. At a luminance of 100 cd/m{sup 2}, the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V {sub oc}) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm{sup 2}. And the short-circuit current (I {sub sc}) of 92.5x10{sup -6} A/cm{sup 2}, fill factor (FF) of 0.30 and power conversion efficiency ({eta} {sub e}) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices.

  9. Indium antimonide quantum well structures for electronic device applications

    Science.gov (United States)

    Edirisooriya, Madhavie

    The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

  10. Driver electronic device use in 2013.

    Science.gov (United States)

    2015-04-01

    The percentage of drivers text-messaging or visibly manipulating : hand-held devices increased from 1.5 percent in : 2012 to 1.7 percent in 2013; however, this was not a statistically : significant increase. Driver hand-held cell phone : use decrease...

  11. Electronic processes in organic electronics bridging nanostructure, electronic states and device properties

    CERN Document Server

    Kudo, Kazuhiro; Nakayama, Takashi; Ueno, Nobuo

    2015-01-01

    The book covers a variety of studies of organic semiconductors, from fundamental electronic states to device applications, including theoretical studies. Furthermore, innovative experimental techniques, e.g., ultrahigh sensitivity photoelectron spectroscopy, photoelectron yield spectroscopy, spin-resolved scanning tunneling microscopy (STM), and a material processing method with optical-vortex and polarization-vortex lasers, are introduced. As this book is intended to serve as a textbook for a graduate level course or as reference material for researchers in organic electronics and nanoscience from electronic states, fundamental science that is necessary to understand the research is described. It does not duplicate the books already written on organic electronics, but focuses mainly on electronic properties that arise from the nature of organic semiconductors (molecular solids). The new experimental methods introduced in this book are applicable to various materials (e.g., metals, inorganic and organic mater...

  12. Pointing Device Performance in Steering Tasks.

    Science.gov (United States)

    Senanayake, Ransalu; Goonetilleke, Ravindra S

    2016-06-01

    Use of touch-screen-based interactions is growing rapidly. Hence, knowing the maneuvering efficacy of touch screens relative to other pointing devices is of great importance in the context of graphical user interfaces. Movement time, accuracy, and user preferences of four pointing device settings were evaluated on a computer with 14 participants aged 20.1 ± 3.13 years. It was found that, depending on the difficulty of the task, the optimal settings differ for ballistic and visual control tasks. With a touch screen, resting the arm increased movement time for steering tasks. When both performance and comfort are considered, whether to use a mouse or a touch screen for person-computer interaction depends on the steering difficulty. Hence, a input device should be chosen based on the application, and should be optimized to match the graphical user interface. © The Author(s) 2016.

  13. Performance limitations of translationally symmetric nonimaging devices

    Science.gov (United States)

    Bortz, John C.; Shatz, Narkis E.; Winston, Roland

    2001-11-01

    The component of the optical direction vector along the symmetry axis is conserved for all rays propagated through a translationally symmetric optical device. This quality, referred to herein as the translational skew invariant, is analogous to the conventional skew invariant, which is conserved in rotationally symmetric optical systems. The invariance of both of these quantities is a consequence of Noether's theorem. We show how performance limits for translationally symmetric nonimaging optical devices can be derived from the distributions of the translational skew invariant for the optical source and for the target to which flux is to be transferred. Examples of computed performance limits are provided. In addition, we show that a numerically optimized non-tracking solar concentrator utilizing symmetry-breaking surface microstructure can overcome the performance limits associated with translational symmetry. The optimized design provides a 47.4% increase in efficiency and concentration relative to an ideal translationally symmetric concentrator.

  14. Molecular electronics with single molecules in solid-state devices.

    Science.gov (United States)

    Moth-Poulsen, Kasper; Bjørnholm, Thomas

    2009-09-01

    The ultimate aim of molecular electronics is to understand and master single-molecule devices. Based on the latest results on electron transport in single molecules in solid-state devices, we focus here on new insights into the influence of metal electrodes on the energy spectrum of the molecule, and on how the electron transport properties of the molecule depend on the strength of the electronic coupling between it and the electrodes. A variety of phenomena are observed depending on whether this coupling is weak, intermediate or strong.

  15. Recent progress on thin-film encapsulation technologies for organic electronic devices

    Science.gov (United States)

    Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

    2016-03-01

    Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

  16. Tissue-electronics interfaces: from implantable devices to engineered tissues

    Science.gov (United States)

    Feiner, Ron; Dvir, Tal

    2018-01-01

    Biomedical electronic devices are interfaced with the human body to extract precise medical data and to interfere with tissue function by providing electrical stimuli. In this Review, we outline physiologically and pathologically relevant tissue properties and processes that are important for designing implantable electronic devices. We summarize design principles for flexible and stretchable electronics that adapt to the mechanics of soft tissues, such as those including conducting polymers, liquid metal alloys, metallic buckling and meandering architectures. We further discuss technologies for inserting devices into the body in a minimally invasive manner and for eliminating them without further intervention. Finally, we introduce the concept of integrating electronic devices with biomaterials and cells, and we envision how such technologies may lead to the development of bionic organs for regenerative medicine.

  17. Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

    Science.gov (United States)

    Henderson, Gregory Newell

    Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

  18. Characteristics and performances of electronic personal dosemeters

    International Nuclear Information System (INIS)

    Aubert, B.

    2002-01-01

    The regulations have made obligation for 2 years to measure and analyse the amounts of radiations actually received during an operation. The whole of these measurements taken uninterrupted for an immediate reading is indicated like the operational dosimetry, which is carried out with the means of personal electronic dosemeters. This study analyses the legislation relating to this type of dosimetry as well as the requirements in medical environment, and presents an assessment of the characteristics and performances of the devices available on the French market at the beginning of 2002 starting from the information provided by the various manufacturers. (author)

  19. Holmium hafnate: An emerging electronic device material

    International Nuclear Information System (INIS)

    Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S.; Scott, James F.

    2015-01-01

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho 2 Hf 2 O 7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E g of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices

  20. Holmium hafnate: An emerging electronic device material

    Science.gov (United States)

    Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

    2015-03-01

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  1. Holmium hafnate: An emerging electronic device material

    Energy Technology Data Exchange (ETDEWEB)

    Pavunny, Shojan P., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Scott, James F. [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE (United Kingdom)

    2015-03-16

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  2. Inventory Control: A Small Electronic Device for Studying Chemical Kinetics.

    Science.gov (United States)

    Perez-Rodriguez, A. L.; Calvo-Aguilar, J. L.

    1984-01-01

    Shows how the rate of reaction can be studied using a simple electronic device that overcomes the difficulty students encounter in solving the differential equations describing chemical equilibrium. The device, used in conjunction with an oscilloscope, supplies the voltages that represent the chemical variables that take part in the equilibrium.…

  3. Modern Electronic Devices: An Increasingly Common Cause of Skin Disorders in Consumers.

    Science.gov (United States)

    Corazza, Monica; Minghetti, Sara; Bertoldi, Alberto Maria; Martina, Emanuela; Virgili, Annarosa; Borghi, Alessandro

    2016-01-01

    : The modern conveniences and enjoyment brought about by electronic devices bring with them some health concerns. In particular, personal electronic devices are responsible for rising cases of several skin disorders, including pressure, friction, contact dermatitis, and other physical dermatitis. The universal use of such devices, either for work or recreational purposes, will probably increase the occurrence of polymorphous skin manifestations over time. It is important for clinicians to consider electronics as potential sources of dermatological ailments, for proper patient management. We performed a literature review on skin disorders associated with the personal use of modern technology, including personal computers and laptops, personal computer accessories, mobile phones, tablets, video games, and consoles.

  4. The Effects of Space Environment on Wireless Communication Devices' Performance

    OpenAIRE

    Landon, Hillyard; Dennison, JR

    2012-01-01

    This project evaluates the effects of the space environment on small radio hardware devices called Bluetooth (a proprietary open wireless technology standard for exchanging data over short distances) chips (hoovers). When electronics are exposed to the harsh environment outside the Earth's atmosphere, they sometimes do not perform as expected. The USU Getaway Away Special (GAS) team is now in the design stages of launching a CubeSat (a 10 cm cubed autonomous satellite to fly in Low Earth Orbi...

  5. An examination of safety reports involving electronic flight bags and portable electronic devices

    Science.gov (United States)

    2014-06-01

    The purpose of this research was to develop a better understanding of safety considerations with the use of Electronic Flight Bags (EFBs) and Portable Electronic Devices (PEDs) by examining safety reports from Aviation Safety Reporting System (ASRS),...

  6. Non-destructive Reliability Evaluation of Electronic Device by ESPI

    International Nuclear Information System (INIS)

    Yoon, Sung Un; Kim, Koung Suk; Kang, Ki Soo; Jo, Seon Hyung

    2001-01-01

    This paper propose electronic speckle pattern interferometry(ESPI) for reliability evaluation of electronic device. Especially, vibration problem in a fan of air conditioner, motor of washing machine and etc. is important factor to design the devices. But, it is difficult to apply previous method, accelerometer to the devices with complex geometry. ESPI, non-contact measurement technique applies a commercial fan of air conditioner to vibration analysis. Vibration mode shapes, natural frequency and the range of the frequency are decided and compared with that of FEM analysis. In mechanical deign of new product, ESPI adds weak point of previous method to supply effective design information

  7. Molecular and nanoscale materials and devices in electronics.

    Science.gov (United States)

    Fu, Lei; Cao, Lingchao; Liu, Yunqi; Zhu, Daoben

    2004-12-13

    Over the past several years, there have been many significant advances toward the realization of electronic computers integrated on the molecular scale and a much greater understanding of the types of materials that will be useful in molecular devices and their properties. It was demonstrated that individual molecules could serve as incomprehensibly tiny switch and wire one million times smaller than those on conventional silicon microchip. This has resulted very recently in the assembly and demonstration of tiny computer logic circuits built from such molecular scale devices. The purpose of this review is to provide a general introduction to molecular and nanoscale materials and devices in electronics.

  8. Few-electron Qubits in Silicon Quantum Electronic Devices

    Science.gov (United States)

    2014-09-01

    Calculation of the charge relaxation time T1 . . . . . . . . . . . . . . 63 5.1 The absence of spin blockade in dual-gated DQD devices . . . . . . . 70...2013. 98 115 [102] M. Pioro-Ladrière, T. Obata, Y. Tokura, Y.-S. Shin, T. Kubo , K. Yoshida, T. Taniyama, and S. Tarucha. Nat. Phys., 4:776–779

  9. Thermoelectric air-cooling module for electronic devices

    International Nuclear Information System (INIS)

    Chang, Yu-Wei; Chang, Chih-Chung; Ke, Ming-Tsun; Chen, Sih-Li

    2009-01-01

    This article investigates the thermoelectric air-cooling module for electronic devices. The effects of heat load of heater and input current to thermoelectric cooler are experimentally determined. A theoretical model of thermal analogy network is developed to predict the thermal performance of the thermoelectric air-cooling module. The result shows that the prediction by the model agrees with the experimental data. At a specific heat load, the thermoelectric air-cooling module reaches the best cooling performance at an optimum input current. In this study, the optimum input currents are from 6 A to 7 A at the heat loads from 20 W to 100 W. The result also demonstrates that the thermoelectric air-cooling module performs better performance at a lower heat load. The lowest total temperature difference-heat load ratio is experimentally estimated as -0.54 W K -1 at the low heat load of 20 W, while it is 0.664 W K -1 at the high heat load of 100 W. In some conditions, the thermoelectric air-cooling module performs worse than the air-cooling heat sink only. This article shows the effective operating range in which the cooling performance of the thermoelectric air-cooling module excels that of the air-cooling heat sink only.

  10. Charge-coupled device area detector for low energy electrons

    Czech Academy of Sciences Publication Activity Database

    Horáček, Miroslav

    2003-01-01

    Roč. 74, č. 7 (2003), s. 3379 - 3384 ISSN 0034-6748 R&D Projects: GA ČR GA102/00/P001 Institutional research plan: CEZ:AV0Z2065902 Keywords : low energy electrons * charged-coupled device * detector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.343, year: 2003

  11. Incorporating Ethical Consumption into Electronic Device Acquisition: A Proposal

    Science.gov (United States)

    Poggiali, Jennifer

    2016-01-01

    This essay proposes that librarians practice ethical consumption when purchasing electronic devices. Though librarians have long been engaged with environmentalism and social justice, few have suggested that such issues as e-waste and sweatshop labor should impact our decisions to acquire e-readers, tablets, and other electronics. This article…

  12. Macroscopic charge quantization in single-electron devices

    NARCIS (Netherlands)

    Burmistrov, I.S.; Pruisken, A.M.M.

    2010-01-01

    In a recent paper by the authors [I. S. Burmistrov and A. M. M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single-electron transistor or SET) display "macroscopic charge quantization" which is completely analogous to the quantum Hall effect observed on

  13. Characterization of a direct detection device imaging camera for transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Milazzo, Anna-Clare, E-mail: amilazzo@ncmir.ucsd.edu [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States); Moldovan, Grigore [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Lanman, Jason [Department of Molecular Biology, The Scripps Research Institute, La Jolla, CA 92037 (United States); Jin, Liang; Bouwer, James C. [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States); Klienfelder, Stuart [University of California at Irvine, Irvine, CA 92697 (United States); Peltier, Steven T.; Ellisman, Mark H. [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States); Kirkland, Angus I. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Xuong, Nguyen-Huu [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States)

    2010-06-15

    The complete characterization of a novel direct detection device (DDD) camera for transmission electron microscopy is reported, for the first time at primary electron energies of 120 and 200 keV. Unlike a standard charge coupled device (CCD) camera, this device does not require a scintillator. The DDD transfers signal up to 65 lines/mm providing the basis for a high-performance platform for a new generation of wide field-of-view high-resolution cameras. An image of a thin section of virus particles is presented to illustrate the substantially improved performance of this sensor over current indirectly coupled CCD cameras.

  14. Characterization of a direct detection device imaging camera for transmission electron microscopy

    International Nuclear Information System (INIS)

    Milazzo, Anna-Clare; Moldovan, Grigore; Lanman, Jason; Jin, Liang; Bouwer, James C.; Klienfelder, Stuart; Peltier, Steven T.; Ellisman, Mark H.; Kirkland, Angus I.; Xuong, Nguyen-Huu

    2010-01-01

    The complete characterization of a novel direct detection device (DDD) camera for transmission electron microscopy is reported, for the first time at primary electron energies of 120 and 200 keV. Unlike a standard charge coupled device (CCD) camera, this device does not require a scintillator. The DDD transfers signal up to 65 lines/mm providing the basis for a high-performance platform for a new generation of wide field-of-view high-resolution cameras. An image of a thin section of virus particles is presented to illustrate the substantially improved performance of this sensor over current indirectly coupled CCD cameras.

  15. Observation of molecular level behavior in molecular electronic junction device

    Science.gov (United States)

    Maitani, Masato

    In this dissertation, I utilize AFM based scanning probe measurement and surface enhanced Raman scattering based vibrational spectroscopic analysis to directly characterize topographic, electronic, and chemical properties of molecules confined in the local area of M3 junction to elucidate the molecular level behavior of molecular junction electronic devices. In the introduction, the characterization of molecular electronic devices with different types of metal-molecule-metal (M3) structures based upon self-assembled monolayers (SAMs) is reviewed. A background of the characterization methods I use in this dissertation, conducting probe atomic force microscopy (cp-AFM) and surface enhanced Raman spectroscopy (SERS), is provided in chapter 1. Several attempts are performed to create the ideal top metal contacts on SAMs by metal vapor phase deposition in order to prevent the metal penetration inducing critical defects of the molecular electronic devices. The scanning probe microscopy (SPM), such as cp-AFM, contact mode (c-) AFM and non-contact mode (nc-) AFM, in ultra high vacuum conditions are utilized to study the process of the metal-SAM interface construction in terms of the correlation between the morphological and electrical properties including the metal nucleation and filament generation as a function of the functionalization of long-chain alkane thiolate SAMs on Au. In chapter 2, the nascent condensation process of vapor phase Al deposition on inert and reactive SAMs are studied by SPM. The results of top deposition, penetration, and filament generation of deposited Al are discussed and compared to the results previously observed by spectroscopic measurements. Cp-AFM was shown to provide new insights into Al filament formation which has not been observed by conventional spectroscopic analysis. Additionally, the electronic characteristics of individual Al filaments are measured. Chapter 3 reveals SPM characterization of Au deposition onto --COOH terminated SAMs

  16. Electronic cigarette devices and oro-facial trauma (Literature review)

    Science.gov (United States)

    Ghazali, A. F.; Ismail, A. F.; Daud, A.

    2017-08-01

    Detrimental effects of cigarette smoking have been well described and recognized globally. With recent advancement of technology, electronic cigarette has been introduced and gained its popularity and became a global trend, especially among young adults. However, the safety of the electronic devices remains debatable. This paper aimed to compile and review the reported cases of oro-facial trauma related to the usage of electronic cigarette devices. A literature search was conducted using PubMed/Medline in December 2016. The search terms used were a combination of “oral trauma”, “dental trauma”, “oral injury” and “electronic cigarette”. The search included all abstract published from the inception of the database until December 2016. Abstract that was written in English, case report, letter to editors, clinical and human studies were included for analysis. All selected abstract were searched for full articles. A total of 8 articles were included for review. All of the articles were published in 2016 with mostly case reports. The sample size of the studies ranged from 1 to 15 patients. Seven of the included articles are from United States of America and one from Mexico. Our review concluded that the use of electronic cigarette devices posed not only a safety concern but also that the devices were mostly unregulated. There should be a recognized authority body to regulate the safety and standard of the electronic devices.

  17. Self-amplified spontaneous emission free electron laser devices and nonideal electron beam transport

    Directory of Open Access Journals (Sweden)

    L. L. Lazzarino

    2014-11-01

    Full Text Available We have developed, at the SPARC test facility, a procedure for a real time self-amplified spontaneous emission free electron laser (FEL device performance control. We describe an actual FEL, including electron and optical beam transport, through a set of analytical formulas, allowing a fast and reliable on-line “simulation” of the experiment. The system is designed in such a way that the characteristics of the transport elements and the laser intensity are measured and adjusted, via a real time computation, during the experimental run, to obtain an on-line feedback of the laser performances. The detail of the procedure and the relevant experimental results are discussed.

  18. Consumers' Use of Personal Electronic Devices in the Kitchen.

    Science.gov (United States)

    Lando, Amy M; Bazaco, Michael C; Chen, Yi

    2018-02-23

    Smartphones, tablets, and other personal electronic devices have become ubiquitous in Americans' daily lives. These devices are used by people throughout the day, including while preparing food. For example, a device may be used to look at recipes and therefore be touched multiple times during food preparation. Previous research has indicated that cell phones can harbor bacteria, including opportunistic human pathogens such as Staphylococcus and Klebsiella spp. This investigation was conducted with data from the 2016 Food Safety Survey (FSS) and from subsequent focus groups to determine the frequency with which consumers use personal electronic devices in the kitchen while preparing food, the types of devices used, and hand washing behaviors after handling these devices. The 2016 FSS is the seventh wave of a repeated cross-sectional survey conducted by the U.S. Food and Drug Administration in collaboration with the U.S. Department of Agriculture. The goal of the FSS is to evaluate U.S. adult consumer attitudes, behaviors, and knowledge about food safety. The FSS included 4,169 adults that were contacted using a dual-frame (land line and cell phone interviews) random-digit-dial sampling process. The personal electronics module was the first of three food safety topics discussed by each of eight consumer focus groups, which were convened in four U.S. cities in fall 2016. Results from the 2016 FSS revealed that of those individuals who use personal electronic devices while cooking, only about one third reported washing hands after touching the device and before continuing cooking. This proportion is significantly lower than that for self-reported hand washing behaviors after touching risky food products such as raw eggs, meat, chicken, or fish. Results from the focus groups highlight the varied usage of these devices during food preparation and the related strategies consumers are using to incorporate personal electric devices into their cooking routines.

  19. dc-plasma-sprayed electronic-tube device

    Science.gov (United States)

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  20. Ferrite nanoparticles: Synthesis, characterisation and applications in electronic device

    Energy Technology Data Exchange (ETDEWEB)

    Kefeni, Kebede K., E-mail: kkefeni@gmail.com; Msagati, Titus A.M.; Mamba, Bhekie B.

    2017-01-15

    Highlights: • Available synthesis methods of ferrite nanoparticles (FNPs) are briefly reviewed. • Summary of the advantage and limitation of FNPs synthesis techniques are presented. • The existing most common FNPs characterisation techniques are briefly reviewed. • Major application areas of FNPs in electronic materials are reviewed. - Abstract: Ferrite nanoparticles (FNPs) have attracted a great interest due to their wide applications in several areas such as biomedical, wastewater treatment, catalyst and electronic device. This review focuses on the synthesis, characterisation and application of FNPs in electronic device with more emphasis on the recently published works. The most commonly used synthesis techniques along with their advantages and limitations are discussed. The available characterisation techniques and their application in electronic materials such as sensors and biosensors, energy storage, microwave device, electromagnetic interference shielding and high-density recording media are briefly reviewed.

  1. Terrestrial radiation effects in ULSI devices and electronic systems

    CERN Document Server

    Ibe, Eishi H

    2014-01-01

    A practical guide on how mathematical approaches can be used to analyze and control radiation effects in semiconductor devices within various environments Covers faults in ULSI devices to failures in electronic systems caused by a wide variety of radiation fields, including electrons, alpha -rays, muons, gamma rays, neutrons and heavy ions. Readers will learn the environmental radiation features at the ground or avionics altitude. Readers will also learn how to make numerical models from physical insight and what kind of mathematical approaches should be implemented to analyze the radiation effects. A wide variety of mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them. The book provides the reader with the knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. It explains how electronic systems including servers and rout...

  2. Buffer layers and articles for electronic devices

    Science.gov (United States)

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  3. 75 FR 10502 - In the Matter of Certain Electronic Devices, Including Handheld Wireless Communications Devices...

    Science.gov (United States)

    2010-03-08

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-667; Investigation No. 337-TA-673] In the Matter of Certain Electronic Devices, Including Handheld Wireless Communications Devices; Notice of... Entirety AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that...

  4. Nature-Inspired Structural Materials for Flexible Electronic Devices.

    Science.gov (United States)

    Liu, Yaqing; He, Ke; Chen, Geng; Leow, Wan Ru; Chen, Xiaodong

    2017-10-25

    Exciting advancements have been made in the field of flexible electronic devices in the last two decades and will certainly lead to a revolution in peoples' lives in the future. However, because of the poor sustainability of the active materials in complex stress environments, new requirements have been adopted for the construction of flexible devices. Thus, hierarchical architectures in natural materials, which have developed various environment-adapted structures and materials through natural selection, can serve as guides to solve the limitations of materials and engineering techniques. This review covers the smart designs of structural materials inspired by natural materials and their utility in the construction of flexible devices. First, we summarize structural materials that accommodate mechanical deformations, which is the fundamental requirement for flexible devices to work properly in complex environments. Second, we discuss the functionalities of flexible devices induced by nature-inspired structural materials, including mechanical sensing, energy harvesting, physically interacting, and so on. Finally, we provide a perspective on newly developed structural materials and their potential applications in future flexible devices, as well as frontier strategies for biomimetic functions. These analyses and summaries are valuable for a systematic understanding of structural materials in electronic devices and will serve as inspirations for smart designs in flexible electronics.

  5. Molecular self-assembly approaches for supramolecular electronic and organic electronic devices

    Science.gov (United States)

    Yip, Hin-Lap

    Molecular self-assembly represents an efficient bottom-up strategy to generate structurally well-defined aggregates of semiconducting pi-conjugated materials. The capability of tuning the chemical structures, intermolecular interactions and nanostructures through molecular engineering and novel materials processing renders it possible to tailor a large number of unprecedented properties such as charge transport, energy transfer and light harvesting. This approach does not only benefit traditional electronic devices based on bulk materials, but also generate a new research area so called "supramolecular electronics" in which electronic devices are built up with individual supramolecular nanostructures with size in the sub-hundred nanometers range. My work combined molecular self-assembly together with several novel materials processing techniques to control the nucleation and growth of organic semiconducting nanostructures from different type of pi-conjugated materials. By tailoring the interactions between the molecules using hydrogen bonds and pi-pi stacking, semiconducting nanoplatelets and nanowires with tunable sizes can be fabricated in solution. These supramolecular nanostructures were further patterned and aligned on solid substrates through printing and chemical templating methods. The capability to control the different hierarchies of organization on surface provides an important platform to study their structural-induced electronic properties. In addition to using molecular self-assembly to create different organic nanostructures, functional self-assembled monolayer (SAM) formed by spontaneous chemisorption on surfaces was used to tune the interfacial property in organic solar cells. Devices showed dramatically improved performance when appropriate SAMs were applied to optimize the contact property for efficiency charge collection.

  6. Metastable State Diamond Growth and its Applications to Electronic Devices.

    Science.gov (United States)

    Jeng, David Guang-Kai

    Diamond which consists of a dense array of carbon atoms joined by strong covalent bonds and formed into a tetrahedral crystal structure has remarkable mechanical, thermal, optical and electrical properties suitable for many industrial applications. With a proper type of doping, diamond is also an ideal semiconductor for high performance electronic devices. Unfortunately, natural diamond is rare and limited by its size and cost, it is not surprising that people continuously look for a synthetic replacement. It was believed for long time that graphite, another form of carbon, may be converted into diamond under high pressure and temperature. However, the exact condition of conversion was not clear. In 1939, O. I. Leipunsky developed an equilibrium phase diagram between graphite and diamond based on thermodynamic considerations. In the phase diagram, there is a low temperature (below 1000^ circC) and low pressure (below 1 atm) region in which diamond is metastable and graphite is stable, therefore establishes the conditions for the coexistence of the two species. Leipunsky's pioneer work opened the door for diamond synthesis. In 1955, the General Electric company (GE) was able to produce artificial diamond at 55k atm pressure and a temperature of 2000^ circC. Contrary to GE, B. Derjaguin and B. V. Spitzyn in Soviet Union, developed a method of growing diamonds at 1000^circC and at a much lower pressure in 1956. Since then, researchers, particularly in Soviet Union, are continuously looking for methods to grow diamond and diamond film at lower temperatures and pressures with slow but steady progress. It was only in the early 80's that the importance of growing diamond films had attracted the attentions of researchers in the Western world and in Japan. Recent progress in plasma physics and chemical vapor deposition techniques in integrated electronics technology have pushed the diamond growth in its metastable states into a new era. In this research, a microwave plasma

  7. Turbostratic stacked CVD graphene for high-performance devices

    Science.gov (United States)

    Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-03-01

    We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

  8. Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

    Science.gov (United States)

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  9. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  10. {100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  11. Introduction to organic electronic and optoelectronic materials and devices

    CERN Document Server

    Sun, Sam-Shajing

    2008-01-01

    Introduction to Optoelectronic Materials, N. Peyghambarian and M. Fallahi Introduction to Optoelectronic Device Principles, J. Piprek Basic Electronic Structures and Charge Carrier Generation in Organic Optoelectronic Materials, S.-S. Sun Charge Transport in Conducting Polymers, V.N. Prigodin and A.J. Epstein Major Classes of Organic Small Molecules for Electronic and Optoelectronics, X. Meng, W. Zhu, and H. Tian Major Classes of Conjugated Polymers and Synthetic Strategies, Y. Li and J. Hou Low Energy Gap, Conducting, and Transparent Polymers, A. Kumar, Y. Ner, and G.A. Sotzing Conjugated Polymers, Fullerene C60, and Carbon Nanotubes for Optoelectronic Devices, L. Qu, L. Dai, and S.-S. Sun Introduction of Organic Superconducting Materials, H. Mori Molecular Semiconductors for Organic Field-Effect Transistors, A. Facchetti Polymer Field-Effect Transistors, H.G.O. Sandberg Organic Molecular Light-Emitting Materials and Devices, F. So and J. Shi Polymer Light-Emitting Diodes: Devices and Materials, X. Gong and ...

  12. Electronics Related to Nuclear Medicine Imaging Devices. Chapter 7

    Energy Technology Data Exchange (ETDEWEB)

    Ott, R. J. [Joint Department of Physics, Royal Marsden Hospital and Institute of Cancer Research, Surrey (United Kingdom); Stephenson, R. [Rutherford Appleton Laboratory, Oxfordshire (United Kingdom)

    2014-12-15

    Nuclear medicine imaging is generally based on the detection of X rays and γ rays emitted by radionuclides injected into a patient. In the previous chapter, the methods used to detect these photons were described, based most commonly on a scintillation counter although there are imaging devices that use either gas filled ionization detectors or semiconductors. Whatever device is used, nuclear medicine images are produced from a very limited number of photons, due mainly to the level of radioactivity that can be safely injected into a patient. Hence, nuclear medicine images are usually made from many orders of magnitude fewer photons than X ray computed tomography (CT) images, for example. However, as the information produced is essentially functional in nature compared to the anatomical detail of CT, the apparently poorer image quality is overcome by the nature of the information produced. The low levels of photons detected in nuclear medicine means that photon counting can be performed. Here each photon is detected and analysed individually, which is especially valuable, for example, in enabling scattered photons to be rejected. This is in contrast to X ray imaging where images are produced by integrating the flux entering the detectors. Photon counting, however, places a heavy burden on the electronics used for nuclear medicine imaging in terms of electronic noise and stability. This chapter will discuss how the signals produced in the primary photon detection process can be converted into pulses providing spatial, energy and timing information, and how this information is used to produce both qualitative and quantitative images.

  13. CVD diamond substrates for electronic devices

    International Nuclear Information System (INIS)

    Holzer, H.

    1996-03-01

    In this study the applicability of chemical vapor deposition (CVD) diamond as a material for heat spreaders was investigated. Economical evaluations on the production of heat spreaders were also performed. For the diamond synthesis the hot-filament and microwave method were used respectively. The deposition parameters were varied in a way that free standing diamond layers with a thickness of 80 to 750 microns and different qualities were obtained. The influence of the deposition parameters on the relevant film properties was investigated and discussed. With both the hot-filament and microwave method it was possible to deposit diamond layers having a thermal conductivity exceeding 1200 W/mK and therefore to reach the quality level for commercial uses. The electrical resistivity was greater than 10 12 Ωcm. The investigation of the optical properties was done by Raman-, IR- and cathodoluminescence spectroscopy. Because of future applications of diamond-aluminium nitride composites as highly efficient heat spreaders diamond deposition an AIN was investigated. An improved substrate pretreatment prior to diamond deposition showed promising results for better performance of such composite heat spreaders. Both free standing layers and diamond-AIN composites could be cut by a CO2 Laser in Order to get an exact size geometry. A reduction of the diamond surface roughness was achieved by etching with manganese powder or cerium. (author)

  14. Biomimetic self-assembly of a functional asymmetrical electronic device.

    Science.gov (United States)

    Boncheva, Mila; Gracias, David H; Jacobs, Heiko O; Whitesides, George M

    2002-04-16

    This paper introduces a biomimetic strategy for the fabrication of asymmetrical, three-dimensional electronic devices modeled on the folding of a chain of polypeptide structural motifs into a globular protein. Millimeter-size polyhedra-patterned with logic devices, wires, and solder dots-were connected in a linear string by using flexible wire. On self-assembly, the string folded spontaneously into two domains: one functioned as a ring oscillator, and the other one as a shift register. This example demonstrates that biomimetic principles of design and self-organization can be applied to generate multifunctional electronic systems of complex, three-dimensional architecture.

  15. Plykin type attractor in electronic device simulated in MULTISIM

    Science.gov (United States)

    Kuznetsov, Sergey P.

    2011-12-01

    An electronic device is suggested representing a non-autonomous dynamical system with hyperbolic chaotic attractor of Plykin type in the stroboscopic map, and the results of its simulation with software package NI MULTISIM are considered in comparison with numerical integration of the underlying differential equations. A main practical advantage of electronic devices of this kind is their structural stability that means insensitivity of the chaotic dynamics in respect to variations of functions and parameters of elements constituting the system as well as to interferences and noises.

  16. Electronic firing systems and methods for firing a device

    Science.gov (United States)

    Frickey, Steven J [Boise, ID; Svoboda, John M [Idaho Falls, ID

    2012-04-24

    An electronic firing system comprising a control system, a charging system, an electrical energy storage device, a shock tube firing circuit, a shock tube connector, a blasting cap firing circuit, and a blasting cap connector. The control system controls the charging system, which charges the electrical energy storage device. The control system also controls the shock tube firing circuit and the blasting cap firing circuit. When desired, the control system signals the shock tube firing circuit or blasting cap firing circuit to electrically connect the electrical energy storage device to the shock tube connector or the blasting cap connector respectively.

  17. Transmission environmental scanning electron microscope with scintillation gaseous detection device

    International Nuclear Information System (INIS)

    Danilatos, Gerasimos; Kollia, Mary; Dracopoulos, Vassileios

    2015-01-01

    A transmission environmental scanning electron microscope with use of a scintillation gaseous detection device has been implemented. This corresponds to a transmission scanning electron microscope but with addition of a gaseous environment acting both as environmental and detection medium. A commercial type of low vacuum machine has been employed together with appropriate modifications to the detection configuration. This involves controlled screening of various emitted signals in conjunction with a scintillation gaseous detection device already provided with the machine for regular surface imaging. Dark field and bright field imaging has been obtained along with other detection conditions. With a progressive series of modifications and tests, the theory and practice of a novel type of microscopy is briefly shown now ushering further significant improvements and developments in electron microscopy as a whole. - Highlights: • Novel scanning transmission electron microscopy (STEM) with an environmental scanning electron microscope (ESEM) called TESEM. • Use of the gaseous detection device (GDD) in scintillation mode that allows high resolution bright and dark field imaging in the TESEM. • Novel approach towards a unification of both vacuum and environmental conditions in both bulk/surface and transmission mode of electron microscopy

  18. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-11-23

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

  19. 77 FR 38829 - Certain Electronic Imaging Devices; Institution of Investigation

    Science.gov (United States)

    2012-06-29

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-850] Certain Electronic Imaging Devices; Institution of Investigation AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on May 23, 2012...

  20. A Web Service and Interface for Remote Electronic Device Characterization

    Science.gov (United States)

    Dutta, S.; Prakash, S.; Estrada, D.; Pop, E.

    2011-01-01

    A lightweight Web Service and a Web site interface have been developed, which enable remote measurements of electronic devices as a "virtual laboratory" for undergraduate engineering classes. Using standard browsers without additional plugins (such as Internet Explorer, Firefox, or even Safari on an iPhone), remote users can control a Keithley…

  1. Front and backside processed thin film electronic devices

    Science.gov (United States)

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  2. Electron density measurement in an evolving plasma. Experimental devices

    International Nuclear Information System (INIS)

    Consoli, Terenzio; Dagai, Michel

    1960-01-01

    The experimental devices described here allow the electron density measurements in the 10 16 e/m 3 to 10 20 e/m 3 interval. Reprint of a paper published in Comptes rendus des seances de l'Academie des Sciences, t. 250, p. 1223-1225, sitting of 15 February 1960 [fr

  3. In plane optical sensor based on organic electronic devices

    NARCIS (Netherlands)

    Koetse, M.M; Rensing, P.A.; Heck, G.T. van; Sharpe, R.B.A.; Allard, B.A.M.; Wieringa, F.P.; Kruijt, P.G.M.; Meulendijks, N.M.M.; Jansen, H.; Schoo, H.F.M.

    2008-01-01

    Sensors based on organic electronic devices are emerging in a wide range of application areas. Here we present a sensor platform using organic light emitting diodes (OLED) and organic photodiodes (OPD) as active components. By means of lamination and interconnection technology the functional foils

  4. Expert system for fault diagnostic in electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Benedetti, G

    1984-03-01

    Troubleshooting of electronic devices and highly complex PCBS (printed circuit boards) is an area where expert systems can be used. In addition to the difficulties intrinsic to this area it is also impossible to integrate the amount of knowledge based on experience in a traditional model. 8 references.

  5. Opto-electronic devices with nanoparticles and their assemblies

    Science.gov (United States)

    Nguyen, Chieu Van

    Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au NPs has great potential in modern electronics such as solid state lighting, plasma-based nanoelectronics, and memory devices.

  6. Prospective clinical evaluation of an electronic portal imaging device

    International Nuclear Information System (INIS)

    Michalski, Jeff M.; Graham, Mary V.; Bosch, Walter R.; Wong, John; Gerber, Russell L.; Cheng, Abel; Tinger, Alfred; Valicenti, Richard K.

    1996-01-01

    Purpose: To determine whether the clinical implementation of an electronic portal imaging device can improve the precision of daily external beam radiotherapy. Methods and Materials: In 1991, an electronic portal imaging device was installed on a dual energy linear accelerator in our clinic. After training the radiotherapy technologists in the acquisition and evaluation of portal images, we performed a randomized study to determine whether online observation, interruption, and intervention would result in more precise daily setup. The patients were randomized to one of two groups: those whose treatments were actively monitored by the radiotherapy technologists and those that were imaged but not monitored. The treating technologists were instructed to correct the following treatment errors: (a) field placement error (FPE) > 1 cm; (b) incorrect block; (c) incorrect collimator setting; (d) absent customized block. Time of treatment delivery was recorded by our patient tracking and billing computers and compared to a matched set of patients not participating in the study. After the patients radiation therapy course was completed, an offline analysis of the patient setup error was planned. Results: Thirty-two patients were treated to 34 anatomical sites in this study. In 893 treatment sessions, 1,873 fields were treated (1,089 fields monitored and 794 fields unmonitored). Ninety percent of the treated fields had at least one image stored for offline analysis. Eighty-seven percent of these images were analyzed offline. Of the 1,011 fields imaged in the monitored arm, only 14 (1.4%) had an intervention recorded by the technologist. Despite infrequent online intervention, offline analysis demonstrated that the incidence of FPE > 10 mm in the monitored and unmonitored groups was 56 out of 881 (6.1%) and 95 out of 595 (11.2%), respectively; p 10 mm was confined to the pelvic fields. The time to treat patients in this study was 10.78 min (monitored) and 10.10 min (unmonitored

  7. High energy permanent magnets - Solutions to high performance devices

    International Nuclear Information System (INIS)

    Ma, B.M.; Willman, C.J.

    1986-01-01

    Neodymium iron boron magnets are a special class of magnets providing the highest level of performance with the least amount of material. Crucible Research Center produced the highest energy product magnet of 45 MGOe - a world record. Commercialization of this development has already taken place. Crucible Magnetics Division, located in Elizabethtown, Kentucky, is currently manufacturing and marketing six different grades of NdFeB magnets. Permanent magnets find application in motors, speakers, electron beam focusing devices for military and Star Wars. The new NdFeB magnets are of considerable interest for a wide range of applications

  8. Rational design of metal-organic electronic devices: A computational perspective

    Science.gov (United States)

    Chilukuri, Bhaskar

    Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device

  9. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    Science.gov (United States)

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Transmission environmental scanning electron microscope with scintillation gaseous detection device.

    Science.gov (United States)

    Danilatos, Gerasimos; Kollia, Mary; Dracopoulos, Vassileios

    2015-03-01

    A transmission environmental scanning electron microscope with use of a scintillation gaseous detection device has been implemented. This corresponds to a transmission scanning electron microscope but with addition of a gaseous environment acting both as environmental and detection medium. A commercial type of low vacuum machine has been employed together with appropriate modifications to the detection configuration. This involves controlled screening of various emitted signals in conjunction with a scintillation gaseous detection device already provided with the machine for regular surface imaging. Dark field and bright field imaging has been obtained along with other detection conditions. With a progressive series of modifications and tests, the theory and practice of a novel type of microscopy is briefly shown now ushering further significant improvements and developments in electron microscopy as a whole. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. MIS hot electron devices for enhancement of surface reactivity by hot electrons

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar

    A Metal-Insulator-Semiconductor (MIS) based device is developed for investigation of hot electron enhanced chemistry. A model of the device is presented explaining the key concepts of the functionality and the character- istics. The MIS hot electron emitter is fabricated using cleanroom technology...... and the process sequence is described. An Ultra High Vacuum (UHV) setup is modified to facilitate experiments with electron emission from the MIS hot electron emitters and hot electron chemistry. Simulations show the importance of keeping tunnel barrier roughness to an absolute minimum. The tunnel oxide...... to be an important energy loss center for the electrons tunneling through the oxide lowering the emission e±ciency of a factor of 10 for a 1 nm Ti layer thickness. Electron emission is observed under ambient pressure conditions and in up to 2 bars of Ar. 2 bar Ar decrease the emission current by an order...

  12. An analysis of radiation effects on electronics and soi-mos devices as an alternative

    International Nuclear Information System (INIS)

    Ikraiam, F. A.

    2013-01-01

    The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

  13. Low power signal processing electronics for wearable medical devices.

    Science.gov (United States)

    Casson, Alexander J; Rodriguez-Villegas, Esther

    2010-01-01

    Custom designed microchips, known as Application Specific Integrated Circuits (ASICs), offer the lowest possible power consumption electronics. However, this comes at the cost of a longer, more complex and more costly design process compared to one using generic, off-the-shelf components. Nevertheless, their use is essential in future truly wearable medical devices that must operate for long periods of time from physically small, energy limited batteries. This presentation will demonstrate the state-of-the-art in ASIC technology for providing online signal processing for use in these wearable medical devices.

  14. On the OSL curve shape and preheat treatment of electronic components from portable electronic devices

    DEFF Research Database (Denmark)

    Woda, Clemens; Greilich, Steffen; Beerten, Koen

    2010-01-01

    The shape of the OSL decay curve and the effect of longer time delays between accidental exposure and readout of alumina-rich electronic components from portable electronic devices are investigated. The OSL decay curve follows a hyperbolic decay function, which is interpreted as an approximation ...

  15. Ionizing device comprising a microchannel electron multiplier with secondary electron emission

    International Nuclear Information System (INIS)

    Chalmeton, Vincent.

    1974-01-01

    The present invention relates to a ionizing device comprising a microchannel electron multiplier involving secondary electron emission as a means of ionization. A system of electrodes is used to accelerate said electrons, ionize the gas and extract the ions from thus created plasma. Said ionizer is suitable for bombarding the target in neutron sources (target of the type of nickel molybdenum coated with tritiated titanium or with a tritium deuterium mixture) [fr

  16. Organic structures design applications in optical and electronic devices

    CERN Document Server

    Chow, Tahsin J

    2014-01-01

    ""Presenting an overview of the syntheses and properties of organic molecules and their applications in optical and electronic devices, this book covers aspects concerning theoretical modeling for electron transfer, solution-processed micro- and nanomaterials, donor-acceptor cyclophanes, molecular motors, organogels, polyazaacenes, fluorogenic sensors based on calix[4]arenes, and organic light-emitting diodes. The publication of this book is timely because these topics have become very popular nowadays. The book is definitely an excellent reference for scientists working in these a

  17. Round robin performance testing of organic photovoltaic devices

    DEFF Research Database (Denmark)

    Gevorgyan, Suren; Zubillaga, Oihana; de Seoane, José María Vega

    2014-01-01

    This study addresses the issue of poor intercomparability of measurements of organic photovoltaic (OPV) devices among different laboratories. We present a round robin performance testing of novel OPV devices among 16 laboratories, organized within the framework of European Research Infrastructure...

  18. Recent Progress of Textile-Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications.

    Science.gov (United States)

    Heo, Jae Sang; Eom, Jimi; Kim, Yong-Hoon; Park, Sung Kyu

    2018-01-01

    Wearable electronics are emerging as a platform for next-generation, human-friendly, electronic devices. A new class of devices with various functionality and amenability for the human body is essential. These new conceptual devices are likely to be a set of various functional devices such as displays, sensors, batteries, etc., which have quite different working conditions, on or in the human body. In these aspects, electronic textiles seem to be a highly suitable possibility, due to the unique characteristics of textiles such as being light weight and flexible and their inherent warmth and the property to conform. Therefore, e-textiles have evolved into fiber-based electronic apparel or body attachable types in order to foster significant industrialization of the key components with adaptable formats. Although the advances are noteworthy, their electrical performance and device features are still unsatisfactory for consumer level e-textile systems. To solve these issues, innovative structural and material designs, and novel processing technologies have been introduced into e-textile systems. Recently reported and significantly developed functional materials and devices are summarized, including their enhanced optoelectrical and mechanical properties. Furthermore, the remaining challenges are discussed, and effective strategies to facilitate the full realization of e-textile systems are suggested. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

    DEFF Research Database (Denmark)

    Yazdi, Sadegh; Kasama, Takeshi; Beleggia, Marco

    2015-01-01

    Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron...... holography to characterize an electrically-biased Si p-. n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic...

  20. Device for monitoring electron-ion ring parameters

    International Nuclear Information System (INIS)

    Tyutyunnikov, S.I.; Shalyapin, V.N.

    1982-01-01

    The invention is classified as the method of collective ion acceleration. The device for electron-ion ring parameters monitoring is described. The invention is aimed at increasing functional possibilities of the device at the expense of the enchance in the number of the ring controlled parameters. The device comprises three similar plane mirrors installed over accelerating tube circumference and a mirror manufactured in the form of prism and located in the tube centre, as well as the system of synchrotron radiation recording and processing. Two plane mirrors are installed at an angle of 45 deg to the vertical axis. The angle of the third plane mirror 3 α and that of prismatic mirror 2 α to the vertical axis depend on geometric parameters of the ring and accelerating tube and they are determined by the expression α=arc sin R K /2(R T -L), where R K - ring radius, R T - accelerating tube radius, L - the height of segment, formed by the mirror and inner surface of the accelerating tube. The device suggested permits to determine longitudinal dimensions of the ring, its velocity and the number of electrons and ions in the ring

  1. Charge-coupled device area detector for low energy electrons

    International Nuclear Information System (INIS)

    Horacek, Miroslav

    2003-01-01

    A fast position-sensitive detector was designed for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope (SLEEM), based on a thinned back-side directly electron-bombarded charged-coupled device (CCD) sensor (EBCCD). The principle of the SLEEM operation and the motivation for the development of the detector are explained. The electronics of the detector is described as well as the methods used for the measurement of the electron-bombarded gain and of the dark signal. The EBCCD gain of 565 for electron energy 5 keV and dynamic range 59 dB for short integration time up to 10 ms at room temperature were obtained. The energy dependence of EBCCD gain and the detection efficiency are presented for electron energy between 2 and 5 keV, and the integration time dependence of the output signals under dark conditions is given for integration time from 1 to 500 ms

  2. Radiation effects and soft errors in integrated circuits and electronic devices

    CERN Document Server

    Fleetwood, D M

    2004-01-01

    This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th

  3. Functional nanomaterials and devices for electronics, sensors and energy harvesting

    CERN Document Server

    Balestra, Francis; Kilchytska, Valeriya; Flandre, Denis

    2014-01-01

    This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

  4. Transmission electron microscopy of InP-based compound semiconductor materials and devices

    International Nuclear Information System (INIS)

    Chu, S.N.G.

    1990-01-01

    InP/InGaAsP-based heteroepitaxial structures constitute the major optoelectronic devices for state-of-the-art long wavelength optical fiber communication system.s Future advanced device structures will require thin heteroepitaxial quantum wells and superlattices a few tens of angstrom or less in thickness, and lateral dimensions ranging from a few tens angstrom for quantum dots and wires to a few μm in width for buried heterostructure lasers. Due to the increasing complexity of the device structure required by band-gap engineering, the performance of these devices becomes susceptible to any lattice imperfections present in the structure. Transmission electron microscopy (TEM), therefore, becomes the most important technique in characterizing the structural integrity of these materials. Cross-section transmission electron microscopy (XTEM) not only provides the necessary geometric information on the device structure; a careful study of the materials science behind the observed lattice imperfections provides directions for optimization of both the epitaxial growth parameters and device processing conditions. Furthermore, for device reliability studies, TEM is the only technique that unambiguously identifies the cause of device degradation. In this paper, the authors discuss areas of application of various TEM techniques, describe the TEM sample preparation technique, and review case studies to demonstrate the power of the TEM technique

  5. Printed Organic and Inorganic Electronics: Devices To Systems

    KAUST Repository

    Sevilla, Galo T.

    2016-11-11

    Affordable and versatile printed electronics can play a critical role for large area applications, such as for displays, sensors, energy harvesting, and storage. Significant advances including commercialization in the general area of printed electronics have been based on organic molecular electronics. Still some fundamental challenges remain: thermal instability, modest charge transport characteristics, and limited lithographic resolution. In the last decade, one-dimensional nanotubes and nanowires, like carbon nanotubes and silicon nanowires, followed by two-dimensional materials, like graphene and transitional dichalcogenide materials, have shown interesting promise as next-generation printed electronic materials. Challenges, such as non-uniformity in growth, limited scalability, and integration issues, need to be resolved for the viable application of these materials to technology. Recently, the concept of printed high-performance complementary metal\\\\text-oxide semiconductor electronics has also emerged and been proven successful for application to electronics. Here, we review progress in CMOS technology and applications, including challenges faced and opportunities revealed.

  6. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    Science.gov (United States)

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  7. Remote monitoring of cardiovascular implanted electronic devices: a paradigm shift for the 21st century.

    Science.gov (United States)

    Cronin, Edmond M; Varma, Niraj

    2012-07-01

    Traditional follow-up of cardiac implantable electronic devices involves the intermittent download of largely nonactionable data. Remote monitoring represents a paradigm shift from episodic office-based follow-up to continuous monitoring of device performance and patient and disease state. This lessens device clinical burden and may also lead to cost savings, although data on economic impact are only beginning to emerge. Remote monitoring technology has the potential to improve the outcomes through earlier detection of arrhythmias and compromised device integrity, and possibly predict heart failure hospitalizations through integration of heart failure diagnostics and hemodynamic monitors. Remote monitoring platforms are also huge databases of patients and devices, offering unprecedented opportunities to investigate real-world outcomes. Here, the current status of the field is described and future directions are predicted.

  8. On performing semantic queries in small devices

    Science.gov (United States)

    Costea, C.; Petrovan, A.; Neamţ, L.; Chiver, O.

    2016-08-01

    The sensors have a well-defined role in control or monitoring industrial processes; the data given by them can generate valuable information of the trend of the systems to which they belong, but to store a large volume of data and then analysis offline is not always practical. One solution is on-line analysis, preferably as close to the place where data have been generated (edge computing). An increasing amount of data generated by a growing number of devices connected to the Internet resulted in processing data sensors to the edge of the network, in a middle layer where smart entities should interoperate. Diversity of communication technologies outlined the idea of using intermediate devices such as gateways in sensor networks and for this reason the paper examines the functionality of a SPARQL endpoint in the Raspberry Pi device.

  9. Performance Assessment of Communication Enhancement Devices TEA HI Threat Headset

    Science.gov (United States)

    2015-08-01

    AFRL-RH-WP-TR-2015-0076 Performance Assessment of Communication Enhancement Devices: TEA HI Threat Headset Hilary L. Gallagher...of Communication Enhancement Devices: TEA HI Threat Headset 5a. CONTRACT NUMBER FA8650-14-D-6501 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER...technology in military applications. Objective performance data provided an assessment of the performance of these devices. The TEA HI Threat headset

  10. Critical appraisal of cardiac implantable electronic devices: complications and management

    Directory of Open Access Journals (Sweden)

    Padeletti L

    2011-09-01

    Full Text Available Luigi Padeletti1, Giosuè Mascioli2, Alessandro Paoletti Perini1, Gino Grifoni1, Laura Perrotta1, Procolo Marchese3, Luca Bontempi3, Antonio Curnis31Istituto di Clinica Medica e Cardiologia, Università degli Studi di Firenze, Italia; 2Elettrofisiologia, Istituto Humanitas Gavazzeni, Bergamo, Italia; 3Elettrofisiologia, Spedali Civili, Brescia, ItaliaAbstract: Population aging and broader indications for the implant of cardiac implantable electronic devices (CIEDs are the main reasons for the continuous increase in the use of pacemakers (PMs, implantable cardioverter-defibrillators (ICDs and devices for cardiac resynchronization therapy (CRT-P, CRT-D. The growing burden of comorbidities in CIED patients, the greater complexity of the devices, and the increased duration of procedures have led to an augmented risk of infections, which is out of proportion to the increase in implantation rate. CIED infections are an ominous condition, which often implies the necessity of hospitalization and carries an augmented risk of in-hospital death. Their clinical presentation may be either at pocket or at endocardial level, but they can also manifest themselves with lone bacteremia. The management of these infections requires the complete removal of the device and subsequent, specific, antibiotic therapy. CIED failures are monitored by competent public authorities, that require physicians to alert them to any failures, and that suggest the opportune strategies for their management. Although the replacement of all potentially affected devices is often suggested, common practice indicates the replacement of only a minority of devices, as close follow-up of the patients involved may be a safer strategy. Implantation of a PM or an ICD may cause problems in the patients' psychosocial adaptation and quality of life, and may contribute to the development of affective disorders. Clinicians are usually unaware of the psychosocial impact of implanted PMs and ICDs. The

  11. Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

    Energy Technology Data Exchange (ETDEWEB)

    Plimley, Brian, E-mail: brian.plimley@gmail.com [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Coffer, Amy; Zhang, Yigong [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Vetter, Kai [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

    2016-08-11

    Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

  12. 77 FR 15390 - Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint...

    Science.gov (United States)

    2012-03-15

    ... INTERNATIONAL TRADE COMMISSION [DN 2875] Certain Mobile Electronic Devices Incorporating Haptics.... International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received an amended complaint entitled Certain Mobile Electronic Devices...

  13. 78 FR 52211 - Certain Electronic Devices Having Placeshifting or Display Replication and Products Containing...

    Science.gov (United States)

    2013-08-22

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-878] Certain Electronic Devices Having Placeshifting or Display Replication and Products Containing Same; Commission Determination Not To Review an... States after importation of certain electronic devices having placeshifting or display replication...

  14. 78 FR 34132 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-06-06

    ... INTERNATIONAL TRADE COMMISSION [Docket No 2958] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Correction to Notice of Receipt of Complaint; Solicitation... of complaint entitled Certain Portable Electronic Communications Devices, Including Mobile Phones and...

  15. Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

    Science.gov (United States)

    Gamzina, Diana

    Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

  16. Electronic SSKIN pathway: reducing device-related pressure ulcers.

    Science.gov (United States)

    Campbell, Natalie

    2016-08-11

    This article describes how an interprofessional project in a London NHS Foundation Trust was undertaken to develop an intranet-based medical device-related pressure ulcer prevention and management pathway for clinical staff working across an adult critical care directorate, where life-threatening events require interventions using medical devices. The aim of this project was to improve working policies and processes to define key prevention strategies and provide clinicians with a clear, standardised approach to risk and skin assessment, equipment use, documentation and reporting clinical data using the Trust's CareVue (electronic medical records), Datix (incident reporting and risk-management tool) and eTRACE (online clinical protocol ordering) systems. The process included the development, trial and local implementation of the pathway using collaborative teamwork and the SSKIN care bundle tool. The experience of identifying issues, overcoming challenges, defining best practice and cascading SSKIN awareness training is shared.

  17. Flexible organic electronic devices: Materials, process and applications

    International Nuclear Information System (INIS)

    Logothetidis, Stergios

    2008-01-01

    The research for the development of flexible organic electronic devices (FEDs) is rapidly increasing worldwide, since FEDs will change radically several aspects of everyday life. Although there has been considerable progress in the area of flexible inorganic devices (a-Si or solution processed Si), there are numerous advances in the organic (semiconducting, conducting and insulating), inorganic and hybrid (organic-inorganic) materials that exhibit customized properties and stability, and in the synthesis and preparation methods, which are characterized by a significant amount of multidisciplinary efforts. Furthermore, the development and encapsulation of organic electronic devices onto flexible polymeric substrates by large-scale and low-cost roll-to-roll production processes will allow their market implementation in numerous application areas, including displays, lighting, photovoltaics, radio-frequency identification circuitry and chemical sensors, as well as to a new generation of modern exotic applications. In this work, we report on some of the latest advances in the fields of polymeric substrates, hybrid barrier layers, inorganic and organic materials to be used as novel active and functional thin films and nanomaterials as well as for the encapsulation of the materials components for the production of FEDs (flexible organic light-emitting diodes, and organic photovoltaics). Moreover, we will emphasize on the real-time optical monitoring and characterization of the growing films onto the flexible polymeric substrates by spectroscopic ellipsometry methods. Finally, the potentiality for the in-line characterization processes for the development of organic electronics materials will be emphasized, since it will also establish the framework for the achievement of the future scientific and technological breakthroughs

  18. Electronic transport properties in [n]cycloparaphenylenes molecular devices

    Science.gov (United States)

    Hu, Lizhi; Guo, Yandong; Yan, Xiaohong; Zeng, Hongli; Zhou, Jie

    2017-07-01

    The electronic transport of [n]cycloparaphenylenes ([n]CPPs) is investigated based on nonequilibrium Green's function formalism in combination with the density-functional theory. Negative differential resistance (NDR) phenomenon is observed. Further analysis shows that the reduction of the transmission peak induced by the bias changing near Fermi energy results in the NDR effect. Replacing the electrode (from carbon chain to Au electrode), doping with N atom and changing the size of the nanohoop (n = 5, 6, 8, 10) have also been studied and the NDR still exists, suggesting the NDR behavior is the intrinsic feature of such [n]CPPs systems, which would be quite useful in future nanoelectronic devices.

  19. 77 FR 24764 - Visual-Manual NHTSA Driver Distraction Guidelines for In-Vehicle Electronic Devices

    Science.gov (United States)

    2012-04-25

    ...-0053] Visual-Manual NHTSA Driver Distraction Guidelines for In-Vehicle Electronic Devices AGENCY... proposed voluntary NHTSA Driver Distraction Guidelines for in-vehicle electronic devices. The agency... Driver Distraction Guidelines for in-vehicle electronic devices (77 FR 11200). The proposed NHTSA...

  20. Non-equilibrium Green function method: theory and application in simulation of nanometer electronic devices

    International Nuclear Information System (INIS)

    Do, Van-Nam

    2014-01-01

    We review fundamental aspects of the non-equilibrium Green function method in the simulation of nanometer electronic devices. The method is implemented into our recently developed computer package OPEDEVS to investigate transport properties of electrons in nano-scale devices and low-dimensional materials. Concretely, we present the definition of the four real-time Green functions, the retarded, advanced, lesser and greater functions. Basic relations among these functions and their equations of motion are also presented in detail as the basis for the performance of analytical and numerical calculations. In particular, we review in detail two recursive algorithms, which are implemented in OPEDEVS to solve the Green functions defined in finite-size opened systems and in the surface layer of semi-infinite homogeneous ones. Operation of the package is then illustrated through the simulation of the transport characteristics of a typical semiconductor device structure, the resonant tunneling diodes. (review)

  1. Characterization of electronics devices for computed tomography dosimetry

    International Nuclear Information System (INIS)

    Paschoal, Cinthia Marques Magalhaes

    2012-01-01

    Computed tomography (CT) is an examination of high diagnostic capability that delivers high doses of radiation compared with other diagnostic radiological examinations. The current CT dosimetry is mainly made by using a 100 mm long ionization chamber. However, it was verified that this extension, which is intended to collect ali scattered radiation of the single slice dose profile in CT, is not enough. An alternative dosimetry has been suggested by translating smaller detectors. In this work, commercial electronics devices of small dimensions were characterized for CT dosimetry. The project can be divided in five parts: a) pre-selection of devices; b) electrical characterization of selected devices; e) dosimetric characterization in Iaboratory, using radiation qualities specific to CT, and in a tomograph; d) evaluation of the dose profile in CT scanner (free in air and in head and body dosimetric phantom); e) evaluation of the new MSAD detector in a tomograph. The selected devices were OP520 and OP521 phototransistors and BPW34FS photodiode. Before the dosimetric characterization, three configurations of detectors, with 4, 2 and 1 OP520 phototransistor working as a single detector, were evaluated and the configuration with only one device was the most adequate. Hence, the following tests, for all devices, were made using the configuration with only one device. The tests of dosimetric characterization in laboratory and in a tomograph were: energy dependence, response as a function of air kerma (laboratory) and CTDI 100 (scanner), sensitivity variation and angular dependence. In both characterizations, the devices showed some energy dependence, indicating the need of correction factors depending on the beam energy; their response was linear with the air kerma and the CTDI 100 ; the OP520 phototransistor showed the largest variation in sensitivity with the irradiation and the photodiode was the most stable; the angular dependence was significant in the laboratory and

  2. PERFORMANCE EVALUATION OF TYPE I MARINE SANITATION DEVICES

    Science.gov (United States)

    This performance test was designed to evaluate the effectiveness of two Type I Marine Sanitation Devices (MSDs): the Electro Scan Model EST 12, manufactured by Raritan Engineering Company, Inc., and the Thermopure-2, manufactured by Gross Mechanical Laboratories, Inc. Performance...

  3. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    Science.gov (United States)

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

  4. Passive direct methanol fuel cells for portable electronic devices

    International Nuclear Information System (INIS)

    Achmad, F.; Kamarudin, S.K.; Daud, W.R.W.; Majlan, E.H.

    2011-01-01

    Due to the increasing demand for electricity, clean, renewable energy resources must be developed. Thus, the objective of the present study was to develop a passive direct methanol fuel cell (DMFC) for portable electronic devices. The power output of six dual DMFCs connected in series with an active area of 4 cm 2 was approximately 600 mW, and the power density of the DMFCs was 25 mW cm -2 . The DMFCs were evaluated as a power source for mobile phone chargers and media players. The results indicated that the open circuit voltage of the DMFC was between 6.0 V and 6.5 V, and the voltage under operating conditions was 4.0 V. The fuel cell was tested on a variety of cell phone chargers, media players and PDAs. The cost of energy consumption by the proposed DMFC was estimated to be USD 20 W -1 , and the cost of methanol is USD 4 kW h. Alternatively, the local conventional electricity tariff is USD 2 kW h. However, for the large-scale production of electronic devices, the cost of methanol will be significantly lower. Moreover, the electricity tariff is expected to increase due to the constraints of fossil fuel resources and pollution. As a result, DMFCs will become competitive with conventional power sources.

  5. Dynamism in Electronic Performance Support Systems.

    Science.gov (United States)

    Laffey, James

    1995-01-01

    Describes a model for dynamic electronic performance support systems based on NNAble, a system developed by the training group at Apple Computer. Principles for designing dynamic performance support are discussed, including a systems approach, performer-centered design, awareness of situated cognition, organizational memory, and technology use.…

  6. Electron transport in nano-scaled piezoelectronic devices

    Science.gov (United States)

    Jiang, Zhengping; Kuroda, Marcelo A.; Tan, Yaohua; Newns, Dennis M.; Povolotskyi, Michael; Boykin, Timothy B.; Kubis, Tillmann; Klimeck, Gerhard; Martyna, Glenn J.

    2013-05-01

    The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power switching. In this device, the piezoresistive channel is metalized via the expansion of a relaxor piezoelectric element to turn the device on. The mixed-valence compound SmSe is a good choice of PET channel material because of its isostructural pressure-induced continuous metal insulator transition, which is well characterized in bulk single crystals. Prediction and optimization of the performance of a realistic, nano-scaled PET based on SmSe requires the understanding of quantum confinement, tunneling, and the effect of metal interface. In this work, a computationally efficient empirical tight binding (ETB) model is developed for SmSe to study quantum transport in these systems and the scaling limit of PET channel lengths. Modulation of the SmSe band gap under pressure is successfully captured by ETB, and ballistic conductance shows orders of magnitude change under hydrostatic strain, supporting operability of the PET device at nanoscale.

  7. Very High Performance Organic Photonic Devices

    Science.gov (United States)

    2008-01-15

    thought complexity from left (simplest) to right (most complex). Monomeric compounds ( eft ), possible in the world of inorganic semiconductors. Many...60 ±10 4 7 Sht"it M. M.pe) J et 7 r. B 45 lF,xi S R Eft -Ats. hin I 1,,y,)o I jim-.1). Planar OPD TIo Ilion-f~i, , o... App. PM, Leiw 81. 268-270 (Z...of SnPc deposited on ITO, taken in the 0-20 geometry using Cu Kr S.R radiation. (b) Scanning electron microscope (SEM) and tapping moole SR. Forrest

  8. Theoretical modeling of electronic transport in molecular devices

    Science.gov (United States)

    Piccinin, Simone

    In this thesis a novel approach for simulating electronic transport in nanoscale structures is introduced. We consider an open quantum system (the electrons of structure) accelerated by an external electromotive force and dissipating energy through inelastic scattering with a heat bath (phonons) acting on the electrons. This method can be regarded as a quantum-mechanical extension of the semi-classical Boltzmann transport equation. We use periodic boundary conditions and employ Density Functional Theory to recast the many-particle problem in an effective single-particle mean-field problem. By explicitly treating the dissipation in the electrodes, the behavior of the potential is an outcome of our method, at variance with the scattering approaches based on the Landauer formalism. We study the self-consistent steady-state solution, analyzing the out-of-equilibrium electron distribution, the electrical characteristics, the behavior of the self-consistent potential and the density of states of the system. We apply the method to the study of electronic transport in several molecular devices, consisting of small organic molecules or atomic wires sandwiched between gold surfaces. For gold wires we recover the experimental evidence that transport in short wires is ballistic, independent of the length of the wire and with conductance of one quantum. In benzene-1,4-dithiol we find that the delocalization of the frontier orbitals of the molecule is responsible for the high value of conductance and that, by inserting methylene groups to decouple the sulfur atoms from the carbon ring, the current is reduced, in agreement with the experimental measurements. We study the effect a geometrical distortion in a molecular device, namely the relative rotation of the carbon rings in a biphenyl-4,4'-dithiol molecule. We find that the reduced coupling between pi orbitals of the rings induced by the rotation leads to a reduction of the conductance and that this behavior is captured by a

  9. Recent progress in printed 2/3D electronic devices

    Science.gov (United States)

    Klug, Andreas; Patter, Paul; Popovic, Karl; Blümel, Alexander; Sax, Stefan; Lenz, Martin; Glushko, Oleksandr; Cordill, Megan J.; List-Kratochvil, Emil J. W.

    2015-09-01

    New, energy-saving, efficient and cost-effective processing technologies such as 2D and 3D inkjet printing (IJP) for the production and integration of intelligent components will be opening up very interesting possibilities for industrial applications of molecular materials in the near future. Beyond the use of home and office based printers, "inkjet printing technology" allows for the additive structured deposition of photonic and electronic materials on a wide variety of substrates such as textiles, plastics, wood, stone, tiles or cardboard. Great interest also exists in applying IJP in industrial manufacturing such as the manufacturing of PCBs, of solar cells, printed organic electronics and medical products. In all these cases inkjet printing is a flexible (digital), additive, selective and cost-efficient material deposition method. Due to these advantages, there is the prospect that currently used standard patterning processes can be replaced through this innovative material deposition technique. A main issue in this research area is the formulation of novel functional inks or the adaptation of commercially available inks for specific industrial applications and/or processes. In this contribution we report on the design, realization and characterization of novel active and passive inkjet printed electronic devices including circuitry and sensors based on metal nanoparticle ink formulations and the heterogeneous integration into 2/3D printed demonstrators. The main emphasis of this paper will be on how to convert scientific inkjet knowledge into industrially relevant processes and applications.

  10. Stress testing on silicon carbide electronic devices for prognostics and health management.

    Energy Technology Data Exchange (ETDEWEB)

    Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Smith, Mark A.; Atcitty, Stanley

    2011-01-01

    Power conversion systems for energy storage and other distributed energy resource applications are among the drivers of the important role that power electronics plays in providing reliable electricity. Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) will help increase the performance and efficiency of power electronic equipment while condition monitoring (CM) and prognostics and health management (PHM) will increase the operational availability of the equipment and thereby make it more cost effective. Voltage and/or temperature stress testing were performed on a number of SiC devices in order to accelerate failure modes and to identify measureable shifts in electrical characteristics which may provide early indication of those failures. Those shifts can be interpreted and modeled to provide prognostic signatures for use in CM and/or PHM. Such experiments will also lead to a deeper understanding of basic device physics and the degradation mechanisms behind failure.

  11. Performance of a GaAs electron source

    International Nuclear Information System (INIS)

    Calabrese, R.; Ciullo, G.; Della Mea, G.; Egeni, G.P.; Guidi, V.; Lamanna, G.; Lenisa, P.; Maciga, B.; Rigato, V.; Rudello, V.; Tecchio, L.; Yang, B.; Zandolin, S.

    1994-01-01

    We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for application of the GaAs photocathode as a source for electron cooling devices. We also present the preliminary results of a surface analysis experiment, carried out by means of the RBS technique to check the hypothesis of cesium evaporation from the surface when the photocathode is in operation. (orig.)

  12. Microdiffraction imaging—a suitable tool to characterize organic electronic devices

    Directory of Open Access Journals (Sweden)

    Clemens Liewald

    2015-10-01

    Full Text Available Tailoring device architecture and active film morphology is crucial for improving organic electronic devices. Therefore, knowledge about the local degree of crystallinity is indispensable to gain full control over device behavior and performance. In this article, we report on microdiffraction imaging as a new tool to characterize organic thin films on the sub-micron length scale. With this technique, which was developed at the ID01 beamline at the ESRF in Grenoble, a focused X-ray beam (300 nm diameter, 12.5 keV energy is scanned over a sample. The beam size guarantees high resolution, while material and structure specificity is gained by the choice of Bragg condition.Here, we explore the possibilities of microdiffraction imaging on two different types of samples. First, we measure the crystallinity of a pentacene thin film, which is partially buried beneath thermally deposited gold electrodes and a second organic film of fullerene C60. The data shows that the pentacene film structure is not impaired by the subsequent deposition and illustrates the potential of the technique to characterize artificial structures within fully functional electronic devices. Second, we investigate the local distribution of intrinsic polymorphism of pentacene thin films, which is very likely to have a substantial influence on electronic properties of organic electronic devices. An area of 40 μm by 40 μm is scanned under the Bragg conditions of the thin-film phase and the bulk phase of pentacene, respectively. To find a good compromise between beam footprint and signal intensity, third order Bragg condition is chosen. The scans show complementary signal distribution and hence demonstrate details of the crystalline structure with a lateral resolution defined by the beam footprint (300 nm by 3 μm.The findings highlight the range of applications of microdiffraction imaging in organic electronics, especially for organic field effect transistors and for organic solar

  13. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices

    KAUST Repository

    Beljonne, David; Cornil, Jérôme; Muccioli, Luca; Zannoni, Claudio; Brédas, Jean-Luc; Castet, Frédéric

    2011-01-01

    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational

  14. Rapid fabrication of Al{sub 2}O{sub 3} encapsulations for organic electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Kamran; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Mehdi, Syed Murtuza [Department of Mechanical Engineering, NED University of Engineering and Technology, Karachi 75270 (Pakistan); Choi, Kyung-Hyun, E-mail: amm@jejunu.ac.kr [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); An, Young Jin [Jeonnam Science and Technology Promotion Center, Yeongam-gun, Jeollanam-do 526-897 (Korea, Republic of)

    2015-10-30

    Highlights: • Al{sub 2}O{sub 3} encapsulations are being developed through a unique R2R-AALD system. • The encapsulations have resulted in life time enhancement of PVP memristor devices. • The Al{sub 2}O{sub 3} encapsulated memristor performed with superior stability for four weeks. • Encapsulated devices performed efficiently even after bending test for 100 cycles. - Abstract: Organic electronics have earned great reputation in electronic industry yet they suffer technical challenges such as short lifetimes and low reliability because of their susceptibility to water vapor and oxygen which causes their fast degradation. This paper report on the rapid fabrication of Al{sub 2}O{sub 3} encapsulations through a unique roll-to-roll atmospheric atomic layer deposition technology (R2R-AALD) for the life time enhancement of organic poly (4-vinylphenol) (PVP) memristor devices. The devices were then categorized into two sets. One was processed with R2R-AALD Al{sub 2}O{sub 3} encapsulations at 50 °C and the other one was kept as un-encapsulated. The field-emission scanning electron microscopy (FESEM) results revealed that pin holes and other irregularities in PVP films with average arithmetic roughness (R{sub a}) of 9.66 nm have been effectively covered by Al{sub 2}O{sub 3} encapsulation having R{sub a} of 0.92 nm. The X-ray photoelectron spectroscopy XPS spectrum for PVP film showed peaks of C 1s and O 1s at the binding energies of 285 eV and 531 eV, respectively. The respective appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, confirms the fabrication of Al{sub 2}O{sub 3} films. Electrical current–voltage (I–V) measurements confirmed that the Al{sub 2}O{sub 3} encapsulation has a huge influence on the performance, robustness and life time of memristor devices. The Al{sub 2}O{sub 3} encapsulated memristor performed with superior stability for four weeks whereas the un-encapsulated devices could only last for one

  15. Electron cyclotron beam measurement system in the Large Helical Device

    Energy Technology Data Exchange (ETDEWEB)

    Kamio, S., E-mail: kamio@nifs.ac.jp; Takahashi, H.; Kubo, S.; Shimozuma, T.; Yoshimura, Y.; Igami, H.; Ito, S.; Kobayashi, S.; Mizuno, Y.; Okada, K.; Osakabe, M.; Mutoh, T. [National Institute for Fusion Science, Toki 509-5292 (Japan)

    2014-11-15

    In order to evaluate the electron cyclotron (EC) heating power inside the Large Helical Device vacuum vessel and to investigate the physics of the interaction between the EC beam and the plasma, a direct measurement system for the EC beam transmitted through the plasma column was developed. The system consists of an EC beam target plate, which is made of isotropic graphite and faces against the EC beam through the plasma, and an IR camera for measuring the target plate temperature increase by the transmitted EC beam. This system is applicable to the high magnetic field (up to 2.75 T) and plasma density (up to 0.8 × 10{sup 19} m{sup −3}). This system successfully evaluated the transmitted EC beam profile and the refraction.

  16. Software to manage transformers using intelligent electronic device

    Directory of Open Access Journals (Sweden)

    Marcio Zamboti Fortes

    2016-01-01

    Full Text Available Power companies usually answer the increase in power demand by building new generation facilities. Nevertheless, an efficient use of energy could reduce and delay the costs of investment in new power plants. This paper shows a software system to manage transformers and evaluate losses when they work with zero loads. This system contributes to reduce the waste of energy with some simple actions such as shutting off an unused transformer or reconnecting disabled equipment based on the customer’s demand. It uses real time measurements collected from Intelligent Electronic Devices as a base for software decisions. It also measures and reports the total power saving.

  17. Ultralarge area MOS tunnel devices for electron emission

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2007-01-01

    density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree......A comparative analysis of metal-oxide-semiconductor (MOS) capacitors by capacitance-voltage (C-V) and current-voltage (I-V) characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area (1 cm(2)) ultrathin (similar to 5 nm oxide......) MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the Fowler-Nordheim expression for the current...

  18. Metallization of bacterial cellulose for electrical and electronic device manufacture

    Science.gov (United States)

    Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Jansen, Valerie Malyvanh [Memphis, TN; Woodward, Jonathan [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  19. Measurements of hot spots and electron beams in Z-pinch devices

    International Nuclear Information System (INIS)

    Deeney, C.

    1988-04-01

    Hot spots and Electron Beams have been observed in different types of Z-pinches. There is, however, no conclusive evidence on how either are formed although there has been much theoretical interest in both these phenomena. In this thesis, nanosecond time resolved and time correlated, X-ray and optical diagnostics, are performed on two different types of Z-pinch: a 4 kJ, 30 kV Gas Puff Z-pinch and a 28 kJ, 60 kV Plasma Focus. The aim being to study hot spots and electron beams, as well as characterise the plasma, two different Z-pinch devices. Computer codes are developed to analyse the energy and time resolved data obtained in this work. These codes model both, X-ray emission from a plasma and X-ray emission due to electron beam bombardment of a metal surface. The hot spot and electron beam parameters are measured, from the time correlated X-ray data using these computer codes. The electron beams and the hot spots are also correlated to the plasma behaviour and to each other. The results from both devices are compared with each other and with the theoretical work on hot spot and electron beam formation. A previously unreported 3-5 keV electron temperature plasma is identified, in the gas puff Z-pinch plasma, prior to the formation of the hot spots. it is shown, therefore, that the hot spots are more dense but not hotter than the surrounding plasma. Two distinct periods of electron beam generation are identified in both devices. (author)

  20. 78 FR 1247 - Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media...

    Science.gov (United States)

    2013-01-08

    ... Wireless Communication Devices, Tablet Computers, Media Players, and Televisions, and Components Thereof... devices, including wireless communication devices, tablet computers, media players, and televisions, and... wireless communication devices, tablet computers, media players, and televisions, and components thereof...

  1. Characterization of Initial Parameter Information for Lifetime Prediction of Electronic Devices.

    Science.gov (United States)

    Li, Zhigang; Liu, Boying; Yuan, Mengxiong; Zhang, Feifei; Guo, Jiaqiang

    2016-01-01

    Newly manufactured electronic devices are subject to different levels of potential defects existing among the initial parameter information of the devices. In this study, a characterization of electromagnetic relays that were operated at their optimal performance with appropriate and steady parameter values was performed to estimate the levels of their potential defects and to develop a lifetime prediction model. First, the initial parameter information value and stability were quantified to measure the performance of the electronics. In particular, the values of the initial parameter information were estimated using the probability-weighted average method, whereas the stability of the parameter information was determined by using the difference between the extrema and end points of the fitting curves for the initial parameter information. Second, a lifetime prediction model for small-sized samples was proposed on the basis of both measures. Finally, a model for the relationship of the initial contact resistance and stability over the lifetime of the sampled electromagnetic relays was proposed and verified. A comparison of the actual and predicted lifetimes of the relays revealed a 15.4% relative error, indicating that the lifetime of electronic devices can be predicted based on their initial parameter information.

  2. Characterization of Initial Parameter Information for Lifetime Prediction of Electronic Devices.

    Directory of Open Access Journals (Sweden)

    Zhigang Li

    Full Text Available Newly manufactured electronic devices are subject to different levels of potential defects existing among the initial parameter information of the devices. In this study, a characterization of electromagnetic relays that were operated at their optimal performance with appropriate and steady parameter values was performed to estimate the levels of their potential defects and to develop a lifetime prediction model. First, the initial parameter information value and stability were quantified to measure the performance of the electronics. In particular, the values of the initial parameter information were estimated using the probability-weighted average method, whereas the stability of the parameter information was determined by using the difference between the extrema and end points of the fitting curves for the initial parameter information. Second, a lifetime prediction model for small-sized samples was proposed on the basis of both measures. Finally, a model for the relationship of the initial contact resistance and stability over the lifetime of the sampled electromagnetic relays was proposed and verified. A comparison of the actual and predicted lifetimes of the relays revealed a 15.4% relative error, indicating that the lifetime of electronic devices can be predicted based on their initial parameter information.

  3. Measurement and production of electron deflection using a sweeping magnetic device in radiotherapy

    International Nuclear Information System (INIS)

    Damrongkijudom, N.; Oborn, B.; Rosenfeld, A.; Butson, M.

    2006-01-01

    The deflection and removal of high energy electrons produced by a medical linear accelerator has been attained by a Neodymium Iron Boron (NdFeB) permanent magnetic deflector device. This work was performed in an attempt to confirm the theoretical amount of electron deflection which could be produced by a magnetic field for removal of electrons from a clinical x-ray beam. This was performed by monitoring the paths of mostly monoenergetic clinical electron beams (6MeV to 20MeV) swept by the magnetic fields using radiographic film and comparing to first order deflection models. Results show that the measured deflection distance for 6 MeV electrons was 18 ± 6 cm and the calculated deflection distance was 21.3 cm. For 20 MeV electrons, this value was 5 ± 2 cm for measurement and 5.1 cm for calculation. The magnetic fields produced can thus reduce surface dose in treatment regions of a patient under irradiation by photon beams and we can predict the removal of all electron contaminations up to 6 MeV from a 6 MV photon beam with the radiation field size up to 10 x 10 cm 2 . The model can also estimate electron contamination still present in the treatment beam at larger field sizes

  4. How people with cognitive disabilities experience electronic planning devices.

    Science.gov (United States)

    Adolfsson, Päivi; Lindstedt, Helena; Janeslätt, Gunnel

    2015-01-01

    People with cognitive disabilities have difficulties in accomplishing everyday tasks. Electronic planning devices (EPDs) may compensate for the gap between a person's capacity and everyday challenges. However, the devices are not always used as intended. Despite that, cognitive assistive technology has been investigated in several studies, knowledge regarding when and what makes adults decide to use EPDs is incomplete. The aim was to explore the subjective experiences of people with cognitive disabilities in relation to the use of EPDs. A qualitative approach was applied with a qualitative content analysis. Twelve respondents were interviewed with support from a study specific guide. A model representing the respondents' experiences in the use of EPDs, comprising one theme, Possibility to master my daily life, four categories, Degree of fit to my needs, I am aware of my cognitive disability, I get help to structure my everyday life and The EPD improves my volition and ten subcategories, was developed. EPDs allow people with cognitive disabilities the possibility to deal with daily challenges; those who find EPDs beneficial tend to use them. EPDs can help people with cognitive disabilities in organisation, managing time and improve volition.

  5. Determining Hermeticity of Electron Devices by Dye Penetration

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1972-01-01

    1.1 These practices cover procedures that will normally detect and locate the sites of gross leaks in electron devices. 1.2 These procedures are suitable for use on selected parts during receiving inspection or to verify and locate leakage sites for production control. They are not quantitative; no indication of leak size can be inferred from the test. 1.3 These procedures are most suitable for use on transparent glass-encased devices; all methods are applicable to transparent parts with an internal cavity. Method A, Penetrant-Capillary, is also applicable to parts, such as terminals, end seals or base assemblies, without an internal cavity, and Method C, Penetrant-Pressure Followed by Vacuum, can be used on opaque parts with an internal cavity. Method B, Penetrant-Pressure, can also be used on opaque parts with an internal cavity if the part is opened after dye penetration and before inspection. Parts that have an internal cavity may either contain gas (such as air, nitrogen, nitrogen-helium mixture, etc.) o...

  6. Electronic and optoelectronic materials and devices inspired by nature

    Science.gov (United States)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  7. High-performance green semiconductor devices: materials, designs, and fabrication

    Science.gov (United States)

    Jung, Yei Hwan; Zhang, Huilong; Gong, Shaoqin; Ma, Zhenqiang

    2017-06-01

    From large industrial computers to non-portable home appliances and finally to light-weight portable gadgets, the rapid evolution of electronics has facilitated our daily pursuits and increased our life comforts. However, these rapid advances have led to a significant decrease in the lifetime of consumer electronics. The serious environmental threat that comes from electronic waste not only involves materials like plastics and heavy metals, but also includes toxic materials like mercury, cadmium, arsenic, and lead, which can leak into the ground and contaminate the water we drink, the food we eat, and the animals that live around us. Furthermore, most electronics are comprised of non-renewable, non-biodegradable, and potentially toxic materials. Difficulties in recycling the increasing amount of electronic waste could eventually lead to permanent environmental pollution. As such, discarded electronics that can naturally degrade over time would reduce recycling challenges and minimize their threat to the environment. This review provides a snapshot of the current developments and challenges of green electronics at the semiconductor device level. It looks at the developments that have been made in an effort to help reduce the accumulation of electronic waste by utilizing unconventional, biodegradable materials as components. While many semiconductors are classified as non-biodegradable, a few biodegradable semiconducting materials exist and are used as electrical components. This review begins with a discussion of biodegradable materials for electronics, followed by designs and processes for the manufacturing of green electronics using different techniques and designs. In the later sections of the review, various examples of biodegradable electrical components, such as sensors, circuits, and batteries, that together can form a functional electronic device, are discussed and new applications using green electronics are reviewed.

  8. Novel nano materials for high performance logic and memory devices

    Science.gov (United States)

    Das, Saptarshi

    After decades of relentless progress, the silicon CMOS industry is approaching a stall in device performance for both logic and memory devices due to fundamental scaling limitations. In order to reinforce the accelerating pace, novel materials with unique properties are being proposed on an urgent basis. This list includes one dimensional nanotubes, quasi one dimensional nanowires, two dimensional atomistically thin layered materials like graphene, hexagonal boron nitride and the more recently the rich family of transition metal di-chalcogenides comprising of MoS2, WSe2, WS2 and many more for logic applications and organic and inorganic ferroelectrics, phase change materials and magnetic materials for memory applications. Only time will tell who will win, but exploring these novel materials allow us to revisit the fundamentals and strengthen our understanding which will ultimately be beneficial for high performance device design. While there has been growing interest in two-dimensional (2D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancies due to the lack of a complete picture of their performance potential. The fact that the 2-D layered semiconducting di-chalcogenides need to be connected to the "outside" world in order to capitalize on their ultimate potential immediately emphasizes the importance of a thorough understanding of the contacts. This thesis demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2D material can be harvested. A comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back gated multilayer MoS 2 field effect transistors is also provided. A resistor network model that comprises of Thomas-Fermi charge screening and interlayer coupling is used to explain the non-monotonic trend in the extracted field effect

  9. Metal-Organic Frameworks as Active Materials in Electronic Sensor Devices.

    Science.gov (United States)

    Campbell, Michael G; Dincă, Mircea

    2017-05-12

    In the past decade, advances in electrically conductive metal-organic frameworks (MOFs) and MOF-based electronic devices have created new opportunities for the development of next-generation sensors. Here we review this rapidly-growing field, with a focus on the different types of device configurations that have allowed for the use of MOFs as active components of electronic sensor devices.

  10. Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation?

    Science.gov (United States)

    Enoki, Toshiaki; Kiguchi, Manabu

    2018-03-01

    Interest in utilizing organic molecules to fabricate electronic materials has existed ever since organic (molecular) semiconductors were first discovered in the 1950s. Since then, scientists have devoted serious effort to the creation of various molecule-based electronic systems, such as molecular metals and molecular superconductors. Single-molecule electronics and the associated basic science have emerged over the past two decades and provided hope for the development of highly integrated molecule-based electronic devices in the future (after the Si-based technology era has ended). Here, nanographenes (nano-sized graphene) with atomically precise structures are among the most promising molecules that can be utilized for electronic/spintronic devices. To manipulate single small molecules for an electronic device, a single molecular junction has been developed. It is a powerful tool that allows even small molecules to be utilized. External electric, magnetic, chemical, and mechanical perturbations can change the physical and chemical properties of molecules in a way that is different from bulk materials. Therefore, the various functionalities of molecules, along with changes induced by external perturbations, allows us to create electronic devices that we cannot create using current top-down Si-based technology. Future challenges that involve the incorporation of condensed matter physics, quantum chemistry calculations, organic synthetic chemistry, and electronic device engineering are expected to open a new era in single-molecule device electronic technology.

  11. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Mengseng [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Zhang, Kailiang, E-mail: kailiang_zhang@163.com [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Yang, Ruixia, E-mail: yangrx@hebut.edu.cn [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); Wang, Fang; Zhang, Zhichao; Wu, Shijian [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China)

    2017-07-15

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  12. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    International Nuclear Information System (INIS)

    Xia, Mengseng; Zhang, Kailiang; Yang, Ruixia; Wang, Fang; Zhang, Zhichao; Wu, Shijian

    2017-01-01

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  13. Electronic cooling using an automatic energy transport device based on thermomagnetic effect

    International Nuclear Information System (INIS)

    Xuan Yimin; Lian Wenlei

    2011-01-01

    Liquid cooling for thermal management has been widely applied in electronic cooling. The use of mechanical pumps often leads to poor reliability, high energy consumption and other problems. This paper presents a practical design of liquid cooling system by mean of thermomagnetic effect of magnetic fluids. The effects of several structure and operation factors on the system performance are also discussed. Such a device utilizes an earth magnet and the waste heat generated from a chip or other sources to maintain the flow of working fluid which transfers heat to a far end for dissipation. In the present cooling device, no additional energy other than the waste heat dissipated is consumed for driving the cooling system and the device can be considered as completely self-powered. Application of such a cooling system to a hot chip results in an obvious temperature drop of the chip surface. As the heat load increases, a larger heat dissipation rate can be realized due to a stronger thermomagnetic convection, which indicates a self-regulating feature of such devices. - Research highlights: → Automatic electronic cooling has been realized by means of thermomagnetic effect. → Application of the cooling system to a hot chip results in an obvious surface temperature drop. → The system possesses a self-regulating feature of cooling performance.

  14. Effect of interior geometry on local climate inside an electronic device enclosure

    DEFF Research Database (Denmark)

    Joshy, Salil; Jellesen, Morten Stendahl; Ambat, Rajan

    2017-01-01

    Electronic enclosure design and the internal arrangement of PCBs and components influence microclimate inside the enclosure. This work features a general electronic unit with parallel PCBs. One of the PCB is considered to have heat generating components on it. The humidity and temperature profiles...... geometry of the device and related enclosure design parameters on the humidity and temperature profiles inside the electronic device enclosure....

  15. 76 FR 72439 - Certain Consumer Electronics and Display Devices and Products Containing Same; Receipt of...

    Science.gov (United States)

    2011-11-23

    ... INTERNATIONAL TRADE COMMISSION [DN 2858] Certain Consumer Electronics and Display Devices and.... International Trade Commission has received a complaint entitled In Re Certain Consumer Electronics and Display... importation of certain consumer electronics and display devices and products containing same. The complaint...

  16. 77 FR 14422 - Certain Consumer Electronics and Display Devices and Products Containing Same; Notice of Receipt...

    Science.gov (United States)

    2012-03-09

    ... INTERNATIONAL TRADE COMMISSION [DN 2882] Certain Consumer Electronics and Display Devices and... the U.S. International Trade Commission has received a complaint entitled Certain Consumer Electronics... importation of certain consumer electronics and display devices and products containing same. The complaint...

  17. Selected fault testing of electronic isolation devices used in nuclear power plant operation

    International Nuclear Information System (INIS)

    Villaran, M.; Hillman, K.; Taylor, J.; Lara, J.; Wilhelm, W.

    1994-05-01

    Electronic isolation devices are used in nuclear power plants to provide electrical separation between safety and non-safety circuits and systems. Major fault testing in an earlier program indicated that some energy may pass through an isolation device when a fault at the maximum credible potential is applied in the transverse mode to its output terminals. During subsequent field qualification testing of isolators, concerns were raised that the worst case fault, that is, the maximum credible fault (MCF), may not occur with a fault at the maximum credible potential, but rather at some lower potential. The present test program investigates whether problems can arise when fault levels up to the MCF potential are applied to the output terminals of an isolator. The fault energy passed through an isolated device during a fault was measured to determine whether the levels are great enough to potentially damage or degrade performance of equipment on the input (Class 1E) side of the isolator

  18. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2016-01-01

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

  19. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

    Directory of Open Access Journals (Sweden)

    Shojan P. Pavunny

    2014-03-01

    Full Text Available A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS, bipolar (Bi and BiCMOS chips applications, is presented in this review article.

  20. Electronic and optoelectronic materials and devices inspired by nature

    International Nuclear Information System (INIS)

    Meredith, P; Schwenn, P E; Bettinger, C J; Irimia-Vladu, M; Mostert, A B

    2013-01-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist. (review article)

  1. Legal, ethical, and procedural bases for the use of aseptic techniques to implant electronic devices

    Science.gov (United States)

    Mulcahy, Daniel M.

    2013-01-01

    The popularity of implanting electronic devices such as transmitters and data loggers into captive and free-ranging animals has increased greatly in the past two decades. The devices have become smaller, more reliable, and more capable (Printz 2004; Wilson and Gifford 2005; Metcalfe et al. 2012). Compared with externally mounted devices, implanted devices are largely invisible to external viewers such as tourists and predators; exist in a physically protected, thermally stable environment in mammals and birds; and greatly reduce drag and risk of entanglement. An implanted animal does not outgrow its device or attachment method as can happen with collars and harnesses, which allows young animals to be more safely equipped. However, compared with mounting external devices, implantation requires greater technical ability to perform the necessary anesthesia, analgesia, and surgery. More than 83% of publications in the 1990s that used radiotelemetry on animals assumed that there were no adverse effects on the animal (Godfrey and Bryant 2003). It is likely that some studies using implanted electronic devices have not been published due to a high level of unexpected mortality or to aberrant behavior or disappearance of the implanted animals, a phenomenon known as the “file drawer” problem (Rosenthal 1979; Scargle 2000). The near absence of such studies from the published record may be providing a false sense of security that procedures being used are more innocuous than they actually are. Similarly, authors sometimes state that it was unlikely that device implantation was problematic because study animals appeared to behave normally, or authors state that previous investigators used the same technique and saw no problems. Such statements are suppositions if no supporting data are provided or if the animals were equipped because there was no other way to follow their activity. Moreover, such suppositions ignore other adverse effects that affect behavior indirectly, and

  2. Processing and characterization of device solder interconnection and module attachment for power electronics modules

    Science.gov (United States)

    Haque, Shatil

    This research is focused on the processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure (MPIPPS) was developed for packaging high-performance modules of power electronics building blocks (PEBB). The new concept implemented direct bonding of copper posts, not wire bonding of fine aluminum wires, to interconnect power devices as well as joining the different circuit planes together. We have demonstrated the feasibility of this packaging approach by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si3N 4 passivation, we had successfully fabricated packaged devices and modules using the MPIPPS technique. These modules were tested electrically and thermally, and they operated at pulse-switch and high power stages up to 6kW. However, in the 2nd phase of module fabrication with polyimide passivated devices, we experienced significant yield problems due to metallization difficulties of these devices. The under-bump metallurgy scheme for the development of a solderable interface involved sputtering of Ti-Ni-Cu and Cr-Cu, and an electroless deposition of Zn-Ni-Au metallization. The metallization process produced excellent yield in the case of Si3N4 passivated devices. However, under the same metallization schemes, devices with a polyimide passivation exhibited inconsistent electrical contact resistance. We found that organic contaminants such as hydrocarbons remain in the form of thin monolayers on the surface, even in the case of as-received devices from the manufacturer. Moreover, in the case of polyimide passivated devices, plasma cleaning introduced a few carbon constituents on the

  3. Device Engineering Towards Improved Tin Sulfide Solar Cell Performance and Performance Reproducibility

    Energy Technology Data Exchange (ETDEWEB)

    Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul; Siol, Sebastian; Martinot, Loic; Polizzotti, Alex; Yang, Chuanxi; Hartman, Katy; Gradecak, Silvija; Zakutayev, Andriy; Gordon, Roy G.; Buonassisi, Tonio

    2016-11-21

    As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to rapidly test promising candidates in high-performing PV devices. There is a need to engineer new compatible device architectures, including the development of novel transparent conductive oxides and buffer layers. Here, we consider the two approaches of a substrate-style and a superstrate-style device architecture for novel thin-film solar cells. We use tin sulfide as a test absorber material. Upon device engineering, we demonstrate new approaches to improve device performance and performance reproducibility.

  4. Quantum dot lasers: From promise to high-performance devices

    Science.gov (United States)

    Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.

    2009-03-01

    Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.

  5. Development of a physical and electronic model for RuO 2 nanorod rectenna devices

    Science.gov (United States)

    Dao, Justin

    Ruthenium oxide (RuO2) nanorods are an emergent technology in nanostructure devices. As the physical size of electronics approaches a critical lower limit, alternative solutions to further device miniaturization are currently under investigation. Thin-film nanorod growth is an interesting technology, being investigated for use in wireless communications, sensor systems, and alternative energy applications. In this investigation, self-assembled RuO2 nanorods are grown on a variety of substrates via a high density plasma, reactive sputtering process. Nanorods have been found to grow on substrates that form native oxide layers when exposed to air, namely silicon, aluminum, and titanium. Samples were analyzed with Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) techniques. Conductive Atomic Force Microscopy (C-AFM) measurements were performed on single nanorods to characterize structure and electrical conductivity. The C-AFM probe tip is placed on a single nanorod and I-V characteristics are measured, potentially exhibiting rectifying capabilities. An analysis of these results using fundamental semiconductor physics principles is presented. Experimental data for silicon substrates was most closely approximated by the Simmons model for direct electron tunneling, whereas that of aluminum substrates was well approximated by Fowler-Nordheim tunneling. The native oxide of titanium is regarded as a semiconductor rather than an insulator and its ability to function as a rectifier is not strong. An electronic model for these nanorods is described herein.

  6. The Effects of the Removal of Electronic Devices for 48 Hours on Sleep in Elite Judo Athletes.

    Science.gov (United States)

    Dunican, Ian C; Martin, David T; Halson, Shona L; Reale, Reid J; Dawson, Brian T; Caldwell, John A; Jones, Maddison J; Eastwood, Peter R

    2017-10-01

    This study examined the effects of evening use of electronic devices (i.e., smartphones, etc.) on sleep quality and next-day athletic and cognitive performance in elite judo athletes. Over 6 consecutive days and nights, 23 elite Australian judo athletes were monitored while attending a camp at the Australian Institute of Sport (AIS). In 14 athletes, all electronic devices were removed on days 3 and 4 (i.e., for 48 hours: the "device-restricted group"), whereas 9 were permitted to use their devices throughout the camp (the "control group"). All athletes wore an activity monitor (Readiband) continuously to provide measures of sleep quantity and quality. Other self-reported (diary) measures included time in bed, electronic device use, and rate of perceived exertion during training periods. Cognitive performance (Cogstate) and physical performance (single leg triple hop test) were also measured. When considering night 2 as a "baseline" for each group, removal of electronic devices on nights 3 and 4 (device-restricted group) resulted in no significant differences in any sleep-related measure between the groups. When comparing actigraphy-based measures of sleep to subjective measures, all athletes significantly overestimated sleep duration by 58 ± 85 minutes (p = 0.001) per night and underestimated time of sleep onset by 37 ± 72 minutes (p = 0.001) per night. No differences in physical or cognitive function were observed between the groups. This study has shown that the removal of electronic devices for a period of two nights (48 hours) during a judo camp does not affect sleep quality or quantity or influence athletic or cognitive performance.

  7. Integrated electronic device for processing impulses from neutron detectors

    International Nuclear Information System (INIS)

    Stoica, Mihai; Pirvu, Ion

    2009-01-01

    The developing of nuclear power is a key factor in decreasing energy Romania's dependence on imports of fossil fuels (oil, natural gas). An important point in achieving this goal is to use the experience acquired in the design and use of the equipment produced with the participation of INR specialists for Cernavoda NPP, Units 1 and 2. The design based on Surface Mount Technology (SMT) and the implementation of electronic interface modules of computer processing and detectors of radiation or nuclear particles contribute both to modernize and increase the performance of equipment. (authors)

  8. Characterization of high Tc materials and devices by electron microscopy

    National Research Council Canada - National Science Library

    Browning, Nigel D; Pennycook, Stephen J

    2000-01-01

    ..., and microanalysis by scanning transmission electron microscopy. Ensuing chapters examine identi®cation of new superconducting compounds, imaging of superconducting properties by lowtemperature scanning electron microscopy, imaging of vortices by electron holography and electronic structure determination by electron energy loss spectro...

  9. Graphene Electronic Device Based Biosensors and Chemical Sensors

    Science.gov (United States)

    Jiang, Shan

    Two-dimensional layered materials, such as graphene and MoS2, are emerging as an exciting material system for a new generation of atomically thin electronic devices. With their ultrahigh surface to volume ratio and excellent electrical properties, 2D-layered materials hold the promise for the construction of a generation of chemical and biological sensors with unprecedented sensitivity. In my PhD thesis, I mainly focus on graphene based electronic biosensors and chemical sensors. In the first part of my thesis, I demonstrated the fabrication of graphene nanomesh (GNM), which is a graphene thin film with a periodic array of holes punctuated in it. The periodic holes introduce long periphery active edges that provide a high density of functional groups (e.g. carboxylic groups) to allow for covalent grafting of specific receptor molecules for chemical and biosensor applications. After covalently functionalizing the GNM with glucose oxidase, I managed to make a novel electronic sensor which can detect glucose as well as pH change. In the following part of my thesis I demonstrate the fabrication of graphene-hemin conjugate for nitric oxide detection. The non-covalent functionalization through pi-pi stacking interaction allows reliable immobilization of hemin molecules on graphene without damaging the graphene lattice to ensure the highly sensitive and specific detection of nitric oxide. The graphene-hemin nitric oxide sensor is capable of real-time monitoring of nitric oxide concentrations, which is of central importance for probing the diverse roles of nitric oxide in neurotransmission, cardiovascular systems, and immune responses. Our studies demonstrate that the graphene-hemin sensors can respond rapidly to nitric oxide in physiological environments with sub-nanomolar sensitivity. Furthermore, in vitro studies show that the graphene-hemin sensors can be used for the detection of nitric oxide released from macrophage cells and endothelial cells, demonstrating their

  10. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper.

    Science.gov (United States)

    Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

    2015-05-26

    Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

  11. Materials Challenges for High Performance Magnetocaloric Refrigeration Devices

    DEFF Research Database (Denmark)

    Smith, Anders; Bahl, Christian; Bjørk, Rasmus

    2012-01-01

    Magnetocaloric materials with a Curie temperature near room temperature have attracted signifi cant interest for some time due to their possible application for high-effi ciency refrigeration devices. This review focuses on a number of key issues of relevance for the characterization, performance....... The question of how to evaluate the suitability of a given material for use in a magnetocaloric device is covered in some detail, including a critical assessment of a number of common performance metrics. Of particular interest is which non-magnetocaloric properties need to be considered in this connection....... An overview of several important materials classes is given before considering the performance of materials in actual devices. Finally, an outlook on further developments is presented....

  12. A new linear plasma device for the study of plasma waves in the electron magnetohydrodynamics regime

    Science.gov (United States)

    Joshi, Garima; Ravi, G.; Mukherjee, S.

    2018-06-01

    A new, user-friendly, linear plasma device has been developed in our laboratory where a quiescent (Δ n/n ≈ 1%), low temperature (1-10 eV), pulsed (3-10 ms) plasma can be produced over a large uniform region of 30-40 cm diameter and 40 cm length. Salient features of the device include the flexibility of tuning the plasma density in the range of 10^{10} to 10^{12} cm^{-3} and capability of scanning the plasma and field parameters in two dimensions with a precision of electromagnetic field parameters by miniature magnetic probes and Rogowski coils. The plasma produced is uniform and essentially unbounded for performing experiments on waves and turbulence. The whole device can be operated single-handedly by undergraduate or graduate students. The device can be opened, serviced, new antennas/probes installed and ready for operation in a matter of hours. Some results on the excitation of electromagnetic structures in the context of electron magnetohydrodynamics (EMHD) are also presented to demonstrate the suitability of the device for carrying out such experiments.

  13. A Theoretical Investigation on Rectifying Performance of a Single Motor Molecular Device

    International Nuclear Information System (INIS)

    Lei Hui; Tan Xun-Qiong

    2015-01-01

    We report ab initio calculations of the transport behavior of a phenyl substituted molecular motor. The calculated results show that the transport behavior of the device is sensitive to the rotation degree of the rotor part. When the rotor part is parallel with the stator part, a better rectifying performance can be found in the current-voltage curve. However, when the rotor part revolves to vertical with the stator part, the currents in the positive bias region decrease slightly. More importantly, the rectifying performance disappears. Thus this offers us a new method to modulate the rectifying behavior in molecular devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Performance of the ELBE BPM Electronics

    CERN Document Server

    Evtushenko, P

    2003-01-01

    The ELBE radiation source is based on a superconducting linac. Initially it was designed to be used in CW mode with repetition rates either 13 MHz either 260 MHz. Later it was decided to operate the accelerator with reduced repetition rates for diagnostic reasons and for certain users. Now it is possible to operate at repetition rate 13/n MHz, where n can be 2, 4, 8, 16, 32, 64, and 128. It is required that the BPM system supports any of these operation modes. A core element of the BPM electronics is a logarithmic amplifier AD8313 made by Analog Devices Inc. The logarithmic amplifier is a direct RF to DC converter rated up to 2.5 GHz. Initial design of the BPM electronic was sophisticated only for CW operation with repetition rate more than 10 MHz, since bandwidth of the AD8313 is about of 10 MHz. Additionally a sample and hold amplifier is built in to provide enough time for an ADC to make measurements. The sample and hold amplifier is synchronized with a micropulse frequency. In the paper we present results...

  15. Disposable Electronic Cigarettes and Electronic Hookahs: Evaluation of Performance

    Science.gov (United States)

    Williams, Monique; Ghai, Sanjay

    2015-01-01

    Introduction: The purpose of this study was to characterize the performance of disposable button-activated and disposable airflow-activated electronic cigarettes (EC) and electronic hookahs (EH). Methods: The airflow rate required to produce aerosol, pressure drop, and the aerosol absorbance at 420nm were measured during smoke-outs of 9 disposable products. Three units of each product were tested in these experiments. Results: The airflow rates required to produce aerosol and the aerosol absorbances were lower for button-activated models (3mL/s; 0.41–0.55 absorbance) than for airflow-activated models (7–17mL/s; 0.48–0.84 absorbance). Pressure drop was also lower across button-activated products (range = 6–12mm H2O) than airflow-activated products (range = 15–67mm H20). For 25 of 27 units tested, airflow did not have to be increased during smoke-out to maintain aerosol production, unlike earlier generation models. Two brands had uniform performance characteristics for all parameters, while 3 had at least 1 product that did not function normally. While button-activated models lasted 200 puffs or less and EH airflow-activated models often lasted 400 puffs, none of the models produced as many puffs as advertised. Puff number was limited by battery life, which was shorter in button-activated models. Conclusion: The performance of disposable products was differentiated mainly by the way the aerosol was produced (button vs airflow-activated) rather than by product type (EC vs EH). Users needed to take harder drags on airflow-activated models. Performance varied within models, and battery life limited the number of puffs. Data suggest quality control in manufacturing varies among brands. PMID:25104117

  16. The Effect of Electronic Devices Self-Efficacy, Electronic Devices Usage and Information Security Awareness on Identity-Theft Anxiety Level

    Science.gov (United States)

    Sanga, Sushma

    2016-01-01

    Identity-theft means stealing someone's personal information and using it without his or her permission. Each year, millions of Americans are becoming the victims of identity-theft, and this is one of the seriously growing and widespread issues in the U.S. This study examines the effect of electronic devices self-efficacy, electronic devices…

  17. Performance of a transmutation advanced device for sustainable energy application

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, C.; Rosales, J.; Garcia, L. [Instituto Superior de Tecnologias y Ciencias Aplicadas (INSTEC), La Habana (Cuba); Perez-Navarro, A.; Escriva, A. [Universidad Politecnica de Valencia, Valencia (Spain). Inst. de Ingenieria Energetica; Abanades, A. [Universidad Politecnica de Madrid (Spain). Grupo de Modelizacion de Sistemas Termoenergeticos

    2009-07-01

    Preliminary studies have been performed to design a device for nuclear waste transmutation and hydrogen generation based on a gas cooled pebble bed accelerator driven system, TADSEA (transmutation advanced device for sustainable energy application). In previous studies we have addressed the viability of an ADS Transmutation device that uses as fuel wastes from the existing LWR power plants, encapsulated in graphite in the form of pebble beds, being cooled by helium which enables high temperatures, in the order of 1200 K, to facilitate hydrogen generation from water either by high temperature electrolysis or by thermo chemical cycles. To design this device several configurations were studied, including several reactors thickness, to achieve the desired parameters, the transmutation of nuclear waste and the production of 100 MW. of thermal power. In this paper we are presenting new studies performed on deep burn in-core fuel management strategy for LWR waste. We analyze the fuel cycle on TADSEA device based on driver and transmutation fuel that were proposed for the General Atomic design of a gas turbine-modular helium reactor. We compare the transmutation results of the three fuel management strategies, using driven and transmutation, and standard LWR spend fuel, and present several parameters that describe the neutron performance of TADSEA nuclear core as the fuel and moderator temperature reactivity coefficients and transmutation chain. (author)

  18. Performance of a transmutation advanced device for sustainable energy application

    International Nuclear Information System (INIS)

    Garcia, C.; Rosales, J.; Garcia, L.; Perez-Navarro, A.; Escriva, A.; Abanades, A.

    2009-01-01

    Preliminary studies have been performed to design a device for nuclear waste transmutation and hydrogen generation based on a gas cooled pebble bed accelerator driven system, TADSEA (transmutation advanced device for sustainable energy application). In previous studies we have addressed the viability of an ADS Transmutation device that uses as fuel wastes from the existing LWR power plants, encapsulated in graphite in the form of pebble beds, being cooled by helium which enables high temperatures, in the order of 1200 K, to facilitate hydrogen generation from water either by high temperature electrolysis or by thermo chemical cycles. To design this device several configurations were studied, including several reactors thickness, to achieve the desired parameters, the transmutation of nuclear waste and the production of 100 MW. of thermal power. In this paper we are presenting new studies performed on deep burn in-core fuel management strategy for LWR waste. We analyze the fuel cycle on TADSEA device based on driver and transmutation fuel that were proposed for the General Atomic design of a gas turbine-modular helium reactor. We compare the transmutation results of the three fuel management strategies, using driven and transmutation, and standard LWR spend fuel, and present several parameters that describe the neutron performance of TADSEA nuclear core as the fuel and moderator temperature reactivity coefficients and transmutation chain. (author)

  19. Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

    Science.gov (United States)

    Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

    2016-05-01

    Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

  20. 77 FR 27078 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Science.gov (United States)

    2012-05-08

    ... Phones and Tablet Computers, and Components Thereof; Notice of Receipt of Complaint; Solicitation of... entitled Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... the United States after importation of certain electronic devices, including mobile phones and tablet...

  1. 77 FR 31875 - Certain Electronic Imaging Devices; Notice of Receipt of Complaint; Solicitation of Comments...

    Science.gov (United States)

    2012-05-30

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2898] Certain Electronic Imaging Devices; Notice of... Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Electronic Imaging Devices, DN 2898; the Commission is...

  2. 77 FR 32995 - Certain Electronic Imaging Devices Corrected: Notice of Receipt of Complaint; Solicitation of...

    Science.gov (United States)

    2012-06-04

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2898] Certain Electronic Imaging Devices Corrected.... International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Electronic Imaging Devices, DN 2898; the...

  3. 78 FR 73563 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Science.gov (United States)

    2013-12-06

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-878] Certain Electronic Devices Having... AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has issued (1) a limited exclusion order against infringing electronic devices...

  4. 77 FR 31876 - Certain Consumer Electronics and Display Devices and Products Containing Same Determination Not...

    Science.gov (United States)

    2012-05-30

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-836] Certain Consumer Electronics and Display Devices and Products Containing Same Determination Not To Review Initial Determination To Amend... electronics and display devices and products containing the same by reason of infringement of U.S. Patent Nos...

  5. 77 FR 49458 - Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of...

    Science.gov (United States)

    2012-08-16

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices.... 1337 in the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics, by reason of the infringement of claims of six...

  6. 78 FR 23593 - Certain Mobile Electronic Devices Incorporating Haptics; Termination of Investigation

    Science.gov (United States)

    2013-04-19

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices... the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics that infringe certain claims of six Immersion patents. 77...

  7. Electronic device, system on chip ad method of monitoring data traffic

    NARCIS (Netherlands)

    2011-01-01

    Therefore, an electronic device is provided which comprises a plurality of processing units (IP1-IP6), and a network-based interconnect (N) coupling the processing units (IP1-IP6) for enabling at least one first communication path (C) between the processing units (IP1-IP6). The electronic device

  8. Ballistic electron emission spectroscopy on Ag/Si devices

    Energy Technology Data Exchange (ETDEWEB)

    Bannani, A; Bobisch, C A; Matena, M; Moeller, R [Department of Physics, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048 Duisburg (Germany)], E-mail: amin.bannani@uni-due.de

    2008-09-17

    In this work we report on ballistic electron emission spectroscopy (BEES) studies on epitaxial layers of silver grown on silicon surfaces, with either a Si(111)-(7 x 7) or Si(100)-(2 x 1) surface reconstruction. The experiments were done at low temperature and in ultra-high vacuum (UHV). In addition, BEES measurements on polycrystalline Ag films grown on hydrogen-terminated H:Si(111)-(1 x 1) and H:Si(100)-(2 x 1) surfaces were performed. The Schottky barrier heights were evaluated by BEES. The results are compared to the values for the barrier height reported for macroscopic Schottky diodes. We show that the barrier heights for the epitaxial films substantially differ from the values measured on polycrystalline Ag films, suggesting a strong effect of the interface on the barrier height.

  9. Hardening device, by inserts, of electronic component against radiation

    International Nuclear Information System (INIS)

    Val, C.

    1987-01-01

    The hardening device includes at least two materials, one with high atomic number with respect to the other. One of these materials is set as inserts in a layer of the other material. The hardening device is then made by stacking of such layers, the insert density varying from one layer to the other, making thus vary the atomic number resulting from the hardening device along its thickness, following a predefined law [fr

  10. Ionic current devices-Recent progress in the merging of electronic, microfluidic, and biomimetic structures.

    Science.gov (United States)

    Koo, Hyung-Jun; Velev, Orlin D

    2013-05-09

    We review the recent progress in the emerging area of devices and circuits operating on the basis of ionic currents. These devices operate at the intersection of electrochemistry, electronics, and microfluidics, and their potential applications are inspired by essential biological processes such as neural transmission. Ionic current rectification has been demonstrated in diode-like devices containing electrolyte solutions, hydrogel, or hydrated nanofilms. More complex functions have been realized in ionic current based transistors, solar cells, and switching memory devices. Microfluidic channels and networks-an intrinsic component of the ionic devices-could play the role of wires and circuits in conventional electronics.

  11. Spectroradiometer Intercomparison and Impact on Characterizing Photovoltaic Device Performance: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Habte, A.; Andreas, A.; Ottoson, L.; Gueymard, C.; Fedor, G.; Fowler, S.; Peterson, J.; Naranen, E.; Kobashi, T.; Akiyama, A.; Takagi, S.

    2014-11-01

    Indoor and outdoor testing of photovoltaic (PV) device performance requires the use of solar simulators and natural solar radiation, respectively. This performance characterization requires accurate knowledge of spectral irradiance distribution that is incident on the devices. Spectroradiometers are used to measure the spectral distribution of solar simulators and solar radiation. On September 17, 2013, a global spectral irradiance intercomparison using spectroradiometers was organized by the Solar Radiation Research Laboratory (SRRL) at the National Renewable Energy Laboratory (NREL). This paper presents highlights of the results of this first intercomparison, which will help to decrease systematic inter-laboratory differences in the measurements of the outputs or efficiencies of PV devices and harmonize laboratory experimental procedures.

  12. Timing resolution performance comparison of different SiPM devices

    Energy Technology Data Exchange (ETDEWEB)

    Dolinsky, Sergei, E-mail: dolinsky@ge.com; Fu, Geng; Ivan, Adrian

    2015-11-21

    Silicon photomultiplier (SiPM) devices with improved parameters were recently introduced by several vendors. In addition to published manufacturer performance specifications, different research groups have reported on measurements of the available SiPMs in different operating conditions and using different test setups. In this work we performed a consistent set of test procedures for SiPM devices from various vendors, with focus on Time-of-Flight (TOF) PET detectors applications. SiPMs from Hamamatsu (HPK), SensL, Ketek, and Excelitas were tested. The same experimental setup and procedures were used for comparison of timing resolution for small (3×3 mm{sup 2}) and large (6×6 mm{sup 2} or 4×6 mm{sup 2}) devices coupled to short (3×3×10 mm{sup 3}) and long (4×4×25 mm{sup 3}) LYSO crystals. The potential opportunities for TOF PET detectors are also evaluated.

  13. Performance of photocathode rf gun electron accelerators

    International Nuclear Information System (INIS)

    Ben-Zvi, I.

    1993-01-01

    In Photo-Injectors (PI) electron guns, electrons are emitted from a photocathode by a short laser pulse and then accelerated by intense rf fields in a resonant cavity. The best known advantage of this technique is the high peak current with a good emittance (high brightness). This is important for short wavelength Free-Electron Lasers and linear colliders. PIs are in operation in many electron accelerator facilities and a large number of new guns are under construction. Some applications have emerged, providing, for example, very high pulse charges. PIs have been operated over a wide range of frequencies, from 144 to 3000 MHz (a 17 GHz gun is being developed). An exciting new possibility is the development of superconducting PIs. A significant body of experimental and theoretical work exists by now, indicating the criticality of the accelerator elements that follow the gun for the preservation of the PI's performance as well as possible avenues of improvements in brightness. Considerable research is being done on the laser and photocathode material of the PI, and improvement is expected in this area

  14. Device intended for measurement of induced trapped charge in insulating materials under electron irradiation in a scanning electron microscope

    International Nuclear Information System (INIS)

    Belkorissat, R; Benramdane, N; Jbara, O; Rondot, S; Hadjadj, A; Belhaj, M

    2013-01-01

    A device for simultaneously measuring two currents (i.e. leakage and displacement currents) induced in insulating materials under electron irradiation has been built. The device, suitably mounted on the sample holder of a scanning electron microscope (SEM), allows a wider investigation of charging and discharging phenomena that take place in any type of insulator during its electron irradiation and to determine accurately the corresponding time constants. The measurement of displacement current is based on the principle of the image charge due to the electrostatic influence phenomena. We are reporting the basic concept and test results of the device that we have built using, among others, the finite element method for its calibration. This last method takes into account the specimen chamber geometry, the geometry of the device and the physical properties of the sample. In order to show the possibilities of the designed device, various applications under different experimental conditions are explored. (paper)

  15. Controllable Spatial Configuration on Cathode Interface for Enhanced Photovoltaic Performance and Device Stability.

    Science.gov (United States)

    Li, Jiangsheng; Duan, Chenghao; Wang, Ning; Zhao, Chengjie; Han, Wei; Jiang, Li; Wang, Jizheng; Zhao, Yingjie; Huang, Changshui; Jiu, Tonggang

    2018-05-08

    The molecular structure of cathode interface modification materials can affect the surface morphology of the active layer and key electron transfer processes occurring at the interface of polymer solar cells in inverted structures mostly due to the change of molecular configuration. To investigate the effects of spatial configuration of the cathode interfacial modification layer on polymer solar cells device performances, we introduced two novel organic ionic salts (linear NS2 and three-dimensional (3D) NS4) combined with the ZnO film to fabricate highly efficient inverted solar cells. Both organic ionic salts successfully decreased the surface traps of the ZnO film and made its work function more compatible. Especially NS4 in three-dimensional configuration increased the electron mobility and extraction efficiency of the interfacial film, leading to a significant improvement of device performance. Power conversion efficiency (PCE) of 10.09% based on NS4 was achieved. Moreover, 3D interfacial modification could retain about 92% of its initial PCE over 160 days. It is proposed that 3D interfacial modification retards the element penetration-induced degradation without impeding the electron transfer from the active layer to the ZnO film, which significantly improves device stability. This indicates that inserting three-dimensional organic ionic salt is an efficient strategy to enhance device performance.

  16. [Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

    Science.gov (United States)

    Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

    2010-10-01

    The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

  17. iPosture: The Size of Electronic Consumer Devices Affects our Behavior

    OpenAIRE

    Bos, Maarten W.; Cuddy, Amy J. C.

    2013-01-01

    We examined whether incidental body posture, prompted by working on electronic devices of different sizes, affects power-related behaviors. Grounded in research showing that adopting expansive body postures increases psychological power, we hypothesized that working on larger devices, which forces people to physically expand, causes users to behave more assertively. Participants were randomly assigned to interact with one of four electronic devices that varied in size: an iPod Touch, an iPad,...

  18. Study of Periodic Fabrication Error of Optical Splitter Device Performance

    OpenAIRE

    Ab-Rahman, Mohammad Syuhaimi; Ater, Foze Saleh; Jumari, Kasmiran; Mohammad, Rahmah

    2012-01-01

    In this paper, the effect of fabrication errors (FEs) on the performance of 1×4 optical power splitter is investigated in details. The FE, which is assumed to take regular shape, is considered in each section of the device. Simulation result show that FE has a significant effect on the output power especially when it occurs in coupling regions.

  19. Comparison of visual and electronic devices for individual identification of dromedary camels under different farming conditions.

    Science.gov (United States)

    Caja, G; Díaz-Medina, E; Salama, A A K; Salama, O A E; El-Shafie, M H; El-Metwaly, H A; Ayadi, M; Aljumaah, R S; Alshaikh, M A; Yahyahoui, M H; Seddik, M M; Hammadi, M; Khorchani, T; Amann, O; Cabrera, S

    2016-08-01

    The camel industry uses traditional (i.e., iron brands and ear tags) and modern (i.e., microchips) identification (ID) systems without having performance results of reference. Previously iron-branded ( = 45; 1 yr) and microchipped ( = 59; 7 yr) camels showed problems of healing (8.6% of brands) and reading (only 42.9% of brands and 69.5% of microchips were readable), which made their use inadvisable. With the aim of proposing suitable ID systems for different farming conditions, an on-field study was performed using a total of 528 dromedaries at 4 different locations (Egypt, = 83; Spain, = 304; Saudi Arabia, = 90; and Tunisia, = 51). The ID devices tested were visual (button ear tags, 28.5 mm diameter, = 178; double flag ear tags, 50 by 15 mm, = 83; both made of polyurethane) and electronic (ear tags, = 90, and rumen boluses, = 555). Electronic ear tags were polyurethane-loop type (75 by 9 mm) with a container in which a 22-mm transponder of full-duplex technology was lodged. Electronic boluses of 7 types, varying in dimensions (50 to 76 mm length, 11 to 21 mm width, and 12.7 to 82.1 g weight) and specific gravity (SG; 1.49 to 3.86) and each of them containing a 31-mm transponder of half-duplex technology, were all administered to the dromedaries at the beginning of the study. When a low-SG bolus was lost, a high-SG bolus was readministered. Readability rates of each ID system were evaluated during 1 to 3 yr, according to device and location, and yearly values were estimated for comparison. On a yearly basis, visual ear tag readability was not fully satisfactory; it was lower for rectangular ear tags (66.3%) than for button ear tags (80.9%). Yearly readability of electronic ear tags was 93.7%. Bolus readability dramatically varied according to their SG; the SG 3.0 boluses were efficiently retained (99.6 to 100%) at all locations. In conclusion, according to the expected long lifespan of camels, low ID performances were observed for iron brands, injectable

  20. Using an electronic portal imaging device for exit dose measurements in radiotherapy

    International Nuclear Information System (INIS)

    Ganowicz, M.; Wozniak, B.; Bekman, A.; Maniakowski, Z.

    2003-01-01

    To present a method of determining the exit dose with the use of an electronic portal imaging device (EPID). The device used was the Portal Vision LC250 (Varian). The EPID signals on the central beam axis have been related to the exit dose. The exit dose measurements were performed with the ionisation chamber in the slab phantom at the distance of dose maximum from the exit surface of the phantom. EPID reading was investigated as a function of field size, phantom thickness and source-detector distance. The relation between dose rate and the EPID reading is described with empirical functions applicable to the obtained data. The exit dose is calculated from the EPID reading as a product of the calibration factor and appropriate correction factors. The determination of the exit dose rate from the EPID signal requires the knowledge of many parameters and earlier determination of essential characteristics. (author)

  1. [A design and study of a novel electronic device for cuff-pressure monitoring].

    Science.gov (United States)

    Wang, Shupeng; Li, Wei; Li, Wen; Song, Dejing; Chen, Desheng; Duan, Jun; Li, Chen; Li, Gang

    2017-06-01

    To design a novel electronic device for measuring the pressure in the cuff of the artificial airway; and to study the advantage of this device on continuous and intermittent cuff pressure monitoring. (1) a portable electronic device for cuff pressure measurement was invented, which could turn pressure signal into electrical signal through a pressure transducer. Meantime, it was possible to avoid pressure leak from the joint and the inside of the apparatus by modified Luer taper and sophisticated design. If the cuff pressure was out of the normal range, the apparatus could release a sound and light alarm. (2) Six traditional mechanical manometers were used to determine the cuff pressure in 6 tracheal tubes. The cuff pressure was maintain at 30 cmH 2 O (1 cmH 2 O = 0.098 kPa) by the manometer first, and repeated every 30 seconds for 4 times. (3) Study of continuous cuff pressure monitoring: We used a random number generator to randomize 6 tracheal tubes, 6 mechanical manometers and 6 our products by number 1-6, which has the same number of a group. Every group was further randomized into two balanced groups, one group used the mechanical manometer first, and the other used our product first. The baseline pressure was 30 cmH 2 O, measurement was performed every 4 hours for 6 times. When traditional mechanical manometer was used for cuff pressure monitoring, cuff pressure was decreased by an average of 2.9 cmH 2 O for each measurement (F = 728.2, P = 0.000). In study of continually monitoring, at each monitoring point, the pressure measured by electronic manometer was higher than the mechanical manometer. All the pressures measured by mechanical manometer were dropped below 20 cmH 2 O at 8th hour, and there was no pressure decrease below 20 cmH 2 O measured by electronic manometer in 24 hours by contrast. In study of intermittent monitoring, the same result was found. The pressure was dropped significantly with time when measured by mechanical manometer (F = 61.795, P

  2. Dose patient verification during treatment using an amorphous silicon electronic portal imaging device in radiotherapy

    International Nuclear Information System (INIS)

    Berger, Lucie

    2006-01-01

    Today, amorphous silicon electronic portal imaging devices (aSi EPID) are currently used to check the accuracy of patient positioning. However, they are not use for dose reconstruction yet and more investigations are required to allow the use of an aSi EPID for routine dosimetric verification. The aim of this work is first to study the dosimetric characteristics of the EPID available at the Institut Curie and then, to check patient dose during treatment using these EPID. First, performance optimization of the Varian aS500 EPID system is studied. Then, a quality assurance system is set up in order to certify the image quality on a daily basis. An additional study on the dosimetric performance of the aS500 EPID is monitored to assess operational stability for dosimetry applications. Electronic portal imaging device is also a useful tool to improve IMRT quality control. The validation and the quality assurance of a portal dose image prediction system for IMRT pre-treatment quality control are performed. All dynamic IMRT fields are verified in clinical routine with the new method based on portal dosimetry. Finally, a new formalism for in vivo dosimetry using transit dose measured with EPID is developed and validated. The absolute dose measurement issue using aSi EPID is described and the midplane dose determination using in vivo dose measurements in combination with portal imaging is used with 3D-conformal-radiation therapy. (author) [fr

  3. Just-in-Time or Plenty-of-Time Teaching? Different Electronic Feedback Devices and Their Effect on Student Engagement

    Science.gov (United States)

    Sun, Jerry Chih-Yuan; Martinez, Brandon; Seli, Helena

    2014-01-01

    This study examines how incorporating different electronic feedback devices (i.e., clickers versus web-based polling) may affect specific types of student engagement (i.e., behavioral, emotional, and cognitive engagement), whether students' self-efficacy for learning and performance may differ between courses that have integrated clickers and…

  4. Nanofabrication Technology for Production of Quantum Nano-Electronic Devices Integrating Niobium Electrodes and Optically Transparent Gates

    Science.gov (United States)

    2018-01-01

    TECHNICAL REPORT 3086 January 2018 Nanofabrication Technology for Production of Quantum Nano-electronic Devices Integrating Niobium Electrodes...work described in this report was performed for the by the Advanced Concepts and Applied Research Branch (Code 71730) and the Science and Technology ...Applied Sciences Division iii EXECUTIVE SUMMARY This technical report demonstrates nanofabrication technology for Niobium heterostructures and

  5. Overview of 3-year experience with large-scale electronic portal imaging device-based 3-dimensional transit dosimetry

    NARCIS (Netherlands)

    Mijnheer, Ben J.; González, Patrick; Olaciregui-Ruiz, Igor; Rozendaal, Roel A.; van Herk, Marcel; Mans, Anton

    2015-01-01

    To assess the usefulness of electronic portal imaging device (EPID)-based 3-dimensional (3D) transit dosimetry in a radiation therapy department by analyzing a large set of dose verification results. In our institution, routine in vivo dose verification of all treatments is performed by means of 3D

  6. Performance of the EUSO-Balloon electronics

    International Nuclear Information System (INIS)

    Barrillon, P.; Dagoret, S.; Miyamoto, H.; Moretto, C.; Bacholle, S.; Blaksley, C; Gorodetzky, P.; Jung, A.; Prévôt, G.; Prat, P.; Bayer, J.; Blin, S.; Taille, C. De La; Cafagna, F.; Fornaro, C.; Karczmarczyk, J.; Tanco, G. Medina; Osteria, G.; Perfetto, F.; Park, I.

    2016-01-01

    The 24th of August 2014, the EUSO-Balloon instrument went for a night flight for several hours, 40 km above Timmins (Canada) balloon launching site, concretizing the hard work of an important part of the JEM-EUSO collaboration started 3 years before. This instrument consists of a telescope made of two lenses and a complex electronic chain divided in two main sub-systems: the PDM (Photo Detector Module) and the DP (Data Processor). Each of them is made of several innovative elements developed and tested in a short time. This paper presents their performances before and during the flight

  7. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.

    2016-10-14

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  8. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.; Cordero, Marlon D.; Nassar, Joanna M.; Hanna, Amir; Kutbee, Arwa T.; Carreno, Armando Arpys Arevalo; Hussain, Muhammad Mustafa

    2016-01-01

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  9. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    International Nuclear Information System (INIS)

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  10. Potential up-scaling of inkjet-printed devices for logical circuits in flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, Kalyan Yoti, E-mail: kalyan-yoti.mitra@mb.tu-chemnitz.de, E-mail: enrico.sowade@mb.tu-chemnitz.de; Sowade, Enrico, E-mail: kalyan-yoti.mitra@mb.tu-chemnitz.de, E-mail: enrico.sowade@mb.tu-chemnitz.de [Technische Universität Chemnitz, Department of Digital Printing and Imaging Technology, Chemnitz (Germany); Martínez-Domingo, Carme [Printed Microelectronics Group, CAIAC, Universitat Autònoma de Barcelona, Bellaterra, Spain and Nanobioelectronics and Biosensors Group, Catalan Institute of Nanotechnology (ICN), Universitat Autònoma de Barcelona, Bellaterra, Catalonia (Spain); Ramon, Eloi, E-mail: eloi.ramon@uab.cat [Printed Microelectronics Group, CAIAC, Universitat Autònoma de Barcelona, Bellaterra (Spain); Nanobioelectronics and Biosensors Group, Catalan Institute of Nanotechnology (ICN), Universitat Autònoma de Barcelona, Bellaterra, Catalonia (Spain); Carrabina, Jordi, E-mail: jordi.carrabina@uab.cat [Printed Microelectronics Group, CAIAC, Universitat Autònoma de Barcelona, Bellaterra (Spain); Gomes, Henrique Leonel, E-mail: hgomes@ualg.pt [Universidade do Algarve, Institute of Telecommunications, Faro (Portugal); Baumann, Reinhard R., E-mail: reinhard.baumann@mb.tu-chemnitz.de [Technische Universität Chemnitz, Department of Digital Printing and Imaging Technology, Chemnitz (Germany); Fraunhofer Institute for Electronic Nano Systems (ENAS), Department of Printed Functionalities, Chemnitz (Germany)

    2015-02-17

    Inkjet Technology is often mis-believed to be a deposition/patterning technology which is not meant for high fabrication throughput in the field of printed and flexible electronics. In this work, we report on the 1) printing, 2) fabrication yield and 3) characterization of exemplary simple devices e.g. capacitors, organic transistors etc. which are the basic building blocks for logical circuits. For this purpose, printing is performed first with a Proof of concept Inkjet printing system Dimatix Material Printer 2831 (DMP 2831) using 10 pL small print-heads and then with Dimatix Material Printer 3000 (DMP 3000) using 35 pL industrial print-heads (from Fujifilm Dimatix). Printing at DMP 3000 using industrial print-heads (in Sheet-to-sheet) paves the path towards industrialization which can be defined by printing in Roll-to-Roll format using industrial print-heads. This pavement can be termed as 'Bridging Platform'. This transfer to 'Bridging Platform' from 10 pL small print-heads to 35 pL industrial print-heads help the inkjet-printed devices to evolve on the basis of functionality and also in form of up-scaled quantities. The high printed quantities and yield of inkjet-printed devices justify the deposition reliability and potential to print circuits. This reliability is very much desired when it comes to printing of circuits e.g. inverters, ring oscillator and any other planned complex logical circuits which require devices e.g. organic transistors which needs to get connected in different staged levels. Also, the up-scaled inkjet-printed devices are characterized and they reflect a domain under which they can work to their optimal status. This status is much wanted for predicting the real device functionality and integration of them into a planned circuit.

  11. Potential up-scaling of inkjet-printed devices for logical circuits in flexible electronics

    International Nuclear Information System (INIS)

    Mitra, Kalyan Yoti; Sowade, Enrico; Martínez-Domingo, Carme; Ramon, Eloi; Carrabina, Jordi; Gomes, Henrique Leonel; Baumann, Reinhard R.

    2015-01-01

    Inkjet Technology is often mis-believed to be a deposition/patterning technology which is not meant for high fabrication throughput in the field of printed and flexible electronics. In this work, we report on the 1) printing, 2) fabrication yield and 3) characterization of exemplary simple devices e.g. capacitors, organic transistors etc. which are the basic building blocks for logical circuits. For this purpose, printing is performed first with a Proof of concept Inkjet printing system Dimatix Material Printer 2831 (DMP 2831) using 10 pL small print-heads and then with Dimatix Material Printer 3000 (DMP 3000) using 35 pL industrial print-heads (from Fujifilm Dimatix). Printing at DMP 3000 using industrial print-heads (in Sheet-to-sheet) paves the path towards industrialization which can be defined by printing in Roll-to-Roll format using industrial print-heads. This pavement can be termed as 'Bridging Platform'. This transfer to 'Bridging Platform' from 10 pL small print-heads to 35 pL industrial print-heads help the inkjet-printed devices to evolve on the basis of functionality and also in form of up-scaled quantities. The high printed quantities and yield of inkjet-printed devices justify the deposition reliability and potential to print circuits. This reliability is very much desired when it comes to printing of circuits e.g. inverters, ring oscillator and any other planned complex logical circuits which require devices e.g. organic transistors which needs to get connected in different staged levels. Also, the up-scaled inkjet-printed devices are characterized and they reflect a domain under which they can work to their optimal status. This status is much wanted for predicting the real device functionality and integration of them into a planned circuit

  12. An ontology-based annotation of cardiac implantable electronic devices to detect therapy changes in a national registry.

    Science.gov (United States)

    Rosier, Arnaud; Mabo, Philippe; Chauvin, Michel; Burgun, Anita

    2015-05-01

    The patient population benefitting from cardiac implantable electronic devices (CIEDs) is increasing. This study introduces a device annotation method that supports the consistent description of the functional attributes of cardiac devices and evaluates how this method can detect device changes from a CIED registry. We designed the Cardiac Device Ontology, an ontology of CIEDs and device functions. We annotated 146 cardiac devices with this ontology and used it to detect therapy changes with respect to atrioventricular pacing, cardiac resynchronization therapy, and defibrillation capability in a French national registry of patients with implants (STIDEFIX). We then analyzed a set of 6905 device replacements from the STIDEFIX registry. Ontology-based identification of therapy changes (upgraded, downgraded, or similar) was accurate (6905 cases) and performed better than straightforward analysis of the registry codes (F-measure 1.00 versus 0.75 to 0.97). This study demonstrates the feasibility and effectiveness of ontology-based functional annotation of devices in the cardiac domain. Such annotation allowed a better description and in-depth analysis of STIDEFIX. This method was useful for the automatic detection of therapy changes and may be reused for analyzing data from other device registries.

  13. Opto-electronic devices from block copolymers and their oligomers.

    NARCIS (Netherlands)

    Hadziioannou, G

    1997-01-01

    This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined

  14. "Green" electronics: biodegradable and biocompatible materials and devices for sustainable future.

    Science.gov (United States)

    Irimia-Vladu, Mihai

    2014-01-21

    "Green" electronics represents not only a novel scientific term but also an emerging area of research aimed at identifying compounds of natural origin and establishing economically efficient routes for the production of synthetic materials that have applicability in environmentally safe (biodegradable) and/or biocompatible devices. The ultimate goal of this research is to create paths for the production of human- and environmentally friendly electronics in general and the integration of such electronic circuits with living tissue in particular. Researching into the emerging class of "green" electronics may help fulfill not only the original promise of organic electronics that is to deliver low-cost and energy efficient materials and devices but also achieve unimaginable functionalities for electronics, for example benign integration into life and environment. This Review will highlight recent research advancements in this emerging group of materials and their integration in unconventional organic electronic devices.

  15. Research Update: The electronic structure of hybrid perovskite layers and their energetic alignment in devices

    Directory of Open Access Journals (Sweden)

    Selina Olthof

    2016-09-01

    Full Text Available In recent years, the interest in hybrid organic–inorganic perovskites has increased at a rapid pace due to their tremendous success in the field of thin film solar cells. This area closely ties together fundamental solid state research and device application, as it is necessary to understand the basic material properties to optimize the performances and open up new areas of application. In this regard, the energy levels and their respective alignment with adjacent charge transport layers play a crucial role. Currently, we are lacking a detailed understanding about the electronic structure and are struggling to understand what influences the alignment, how it varies, or how it can be intentionally modified. This research update aims at giving an overview over recent results regarding measurements of the electronic structure of hybrid perovskites using photoelectron spectroscopy to summarize the present status.

  16. 77 FR 68829 - Certain Electronic Digital Media Devices and Components Thereof; Notice of Request for Statements...

    Science.gov (United States)

    2012-11-16

    ... electronic digital media devices and components thereof imported by respondents Samsung Electronics Co, Ltd. of Korea; Samsung Electronics America, Inc. of Ridgefield Park, New Jersey; and Samsung Telecommunications America, LLC of Richardson, Texas (collectively ``Samsung''), and cease and desist orders against...

  17. 77 FR 21584 - Certain Consumer Electronics and Display Devices and Products Containing Same; Institution of...

    Science.gov (United States)

    2012-04-10

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-836] Certain Consumer Electronics and Display... electronics and display devices and products containing same by reason of infringement of certain claims of U... importation, or the sale within the United States after importation of certain consumer electronics and...

  18. Smart home design for electronic devices monitoring based wireless gateway network using cisco packet tracer

    Science.gov (United States)

    Sihombing, Oloan; Zendrato, Niskarto; Laia, Yonata; Nababan, Marlince; Sitanggang, Delima; Purba, Windania; Batubara, Diarmansyah; Aisyah, Siti; Indra, Evta; Siregar, Saut

    2018-04-01

    In the era of technological development today, the technology has become the need for the life of today's society. One is needed to create a smart home in turning on and off electronic devices via smartphone. So far in turning off and turning the home electronic device is done by pressing the switch or remote button, so in control of electronic device control less effective. The home smart design is done by simulation concept by testing system, network configuration, and wireless home gateway computer network equipment required by a smart home network on cisco packet tracer using Internet Thing (IoT) control. In testing the IoT home network wireless network gateway system, multiple electronic devices can be controlled and monitored via smartphone based on predefined configuration conditions. With the Smart Ho me can potentially increase energy efficiency, decrease energy usage costs, control electronics and change the role of residents.

  19. Current voltage perspective of an organic electronic device

    Science.gov (United States)

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  20. Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices.

    Science.gov (United States)

    Glavin, Nicholas R; Chabak, Kelson D; Heller, Eric R; Moore, Elizabeth A; Prusnick, Timothy A; Maruyama, Benji; Walker, Dennis E; Dorsey, Donald L; Paduano, Qing; Snure, Michael

    2017-12-01

    Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm 2 V -1 s -1 and sheet carrier density above 1.07 × 10 13 cm -2 . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Experimental evaluation of cooling efficiency of the high performance cooling device

    Science.gov (United States)

    Nemec, Patrik; Malcho, Milan

    2016-06-01

    This work deal with experimental evaluation of cooling efficiency of cooling device capable transfer high heat fluxes from electric elements to the surrounding. The work contain description of cooling device, working principle of cooling device, construction of cooling device. Experimental part describe the measuring method of device cooling efficiency evaluation. The work results are presented in graphic visualization of temperature dependence of the contact area surface between cooling device evaporator and electronic components on the loaded heat of electronic components in range from 250 to 740 W and temperature dependence of the loop thermosiphon condenser surface on the loaded heat of electronic components in range from 250 to 740 W.

  2. Experimental evaluation of cooling efficiency of the high performance cooling device

    Energy Technology Data Exchange (ETDEWEB)

    Nemec, Patrik, E-mail: patrik.nemec@fstroj.uniza.sk; Malcho, Milan, E-mail: milan.malcho@fstroj.uniza.sk [University of Žilina, Faculty of Mechanical Engineering, Department of Power Engineering, Univerzitna 1, 010 26 Žilina (Slovakia)

    2016-06-30

    This work deal with experimental evaluation of cooling efficiency of cooling device capable transfer high heat fluxes from electric elements to the surrounding. The work contain description of cooling device, working principle of cooling device, construction of cooling device. Experimental part describe the measuring method of device cooling efficiency evaluation. The work results are presented in graphic visualization of temperature dependence of the contact area surface between cooling device evaporator and electronic components on the loaded heat of electronic components in range from 250 to 740 W and temperature dependence of the loop thermosiphon condenser surface on the loaded heat of electronic components in range from 250 to 740 W.

  3. An electron cooling device in the one MeV energy region

    International Nuclear Information System (INIS)

    Busso, L.; Tecchio, L.; Tosello, F.

    1987-01-01

    The project of an electron cooling device at 700 KeV electron energy is reported. The single parts of the device is described in detail. Electron beam diagnostics and technical problems is discussed. The electron gun, the accelerating/decelerating column and the collector have been studied by menas of the Herrmannsfeldt's program and at present are under construction. The high voltage system and the electron cooling magnet are also under construction. Vacuum tests with both hot and cold cathodes have demonstrated that the vacuum requirements can be attained by the use of non-evaporable getter (NEG) pumps between gun, collector and the cooling region. Both kinds of diagnostic for longitudinal and transversal electron temperature measurements are in progress. A first prototype of the synchronous picj-up was successfully tested at CERN SPS. At present the diagnostic with laser beam is in preparation. During the next year the device will be assembled and the laboratory test will be started

  4. Aloe vera in active and passive regions of electronic devices towards a sustainable development

    Science.gov (United States)

    Lim, Zhe Xi; Sreenivasan, Sasidharan; Wong, Yew Hoong; Cheong, Kuan Yew

    2017-07-01

    The increasing awareness towards sustainable development of electronics has driven the search for natural bio-organic materials in place of conventional electronic materials. The concept of using natural bio-organic materials in electronics provides not only an effective solution to address global electronic waste crisis, but also a compelling template for sustainable electronics manufacturing. This paper attempts to provide an overview of using Aloe vera gel as a natural bio-organic material for various electronic applications. Important concepts such as responses of living Aloe vera plant towards electrical stimuli and demonstrations of Aloe vera films as passive and active regions of electronic devices are highlighted in chronological order. The biodegradability and biocompatibility of Aloe vera can bring the world a step closer towards the ultimate goal of sustainable development of electronic devices from "all-natural" materials.

  5. Device for irradiation of a target surface by a variable electron beam, especially electron beam generator, in order to produce semiconductor components

    International Nuclear Information System (INIS)

    Wolfe, J.E.

    1978-01-01

    For the lithographic device there is used a field emission source for thermal ions with a tungsten cathode and a zirconium top as an electron gain. For production of IC chips the electron beam of 1000 A/cm 2 can be focused on a mask template, mounted on a x/Y table, by means of a system of lenses. The electromagnetic focusing device with a small aberration coefficient is designed in such a way that there is obtained a large focal length on the image side as compared to the focal length on the object side. Thereby a small angular deflection of the beam in the focusing device causes a large deflection at the target. The control is performed by a processor. (RW) [de

  6. Electronic Properties and Device Applications of van-der-Waals Thin Films

    Science.gov (United States)

    Renteria, Jacqueline de Dios

    Successful exfoliation of graphene and discoveries of its unique electrical and thermal properties have motivated searches for other quasi two-dimensional (2D) materials with interesting properties. The layered van der Waals materials can be cleaved mechanically or exfoliated chemically by breaking the relatively weak bonding between the layers. In this dissertation research I addressed a special group of inorganic van der Waals materials -- layered transition metal dichalcogenides (MX2, where M=Mo, W, Nb, Ta or Ti and X=S, Se or Te). The focus of the investigation was electronic properties of thin films of TaSe2 and MoS2 and their device applications. In the first part of the dissertation, I describe the fabrication and performance of all-metallic three-terminal devices with the TaSe2 thin-film conducting channel. The layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. It was established that devices with nanometer-scale thickness channels exhibited strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. It was found that the drain-source current in thin-film 2H-TaSe2--Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. In the second part of the dissertation, I describe the fabrication, electrical testing and measurements of the low-frequency 1/f noise in three-terminal devices with the MoS2 thin-film channel (f is the frequency). Analysis of the experimental data allowed us to distinguish channel and contact noise contributions for both as fabricated and aged devices. The noise characteristics of MoS 2--Ti/Au devices are in agreement with the McWhorter model description. The latter is contrary to what is observed in

  7. Electronic properties of organic monolayers and molecular devices

    Indian Academy of Sciences (India)

    These devices exhibit a marked current–voltage rectification behavior due to resonant transport between the Si conduction band and the molecule highest occupied molecular orbital of the molecule. We discuss the role of metal Fermi level pinning in the current–voltage behavior of these molecular junctions. We also ...

  8. Authentication of Radio Frequency Identification Devices Using Electronic Characteristics

    Science.gov (United States)

    Chinnappa Gounder Periaswamy, Senthilkumar

    2010-01-01

    Radio frequency identification (RFID) tags are low-cost devices that are used to uniquely identify the objects to which they are attached. Due to the low cost and size that is driving the technology, a tag has limited computational capabilities and resources. This limitation makes the implementation of conventional security protocols to prevent…

  9. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    Science.gov (United States)

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  10. Simulations of backgate sandwich nanowire MOSFETs with improved device performance

    International Nuclear Information System (INIS)

    Zhao Hengliang; Zhu Huilong; Zhong Jian; Ma Xiaolong; Wei Xing; Zhao Chao; Chen Dapeng; Ye Tianchun

    2014-01-01

    We propose a novel backgate sandwich nanowire MOSFET (SNFET), which offers the advantages of ETSOI (dynamic backgate voltage controllability) and nanowire FETs (good short channel effect). A backgate is used for threshold voltage (V t ) control of the SNFET. Compared with a backgate FinFET with a punch-through stop layer (PTSL), the SNFET possesses improved device performance. 3D device simulations indicate that the SNFET has a three times larger overdrive current, a ∼75% smaller off leakage current, and reduced subthreshold swing (SS) and DIBL than those of a backgate FinFET when the nanowire (NW) and the fin are of equal width. A new process flow to fabricate the backgate SNFET is also proposed in this work. Our analytical model suggests that V t control by the backgate can be attributed to the capacitances formed by the frontgate, NW, and backgate. The SNFET devices are compatible with the latest state-of-the-art high-k/metal gate CMOS technology with the unique capability of independent backgate control for nFETs and pFETs, which is promising for sub-22 nm scaling down. (semiconductor devices)

  11. Printed Organic and Inorganic Electronics: Devices To Systems

    KAUST Repository

    Sevilla, Galo T.; Hussain, Muhammad Mustafa

    2016-01-01

    Affordable and versatile printed electronics can play a critical role for large area applications, such as for displays, sensors, energy harvesting, and storage. Significant advances including commercialization in the general area of printed

  12. Humidity effects on the electronic transport properties in carbon based nanoscale device

    International Nuclear Information System (INIS)

    He, Jun; Chen, Ke-Qiu

    2012-01-01

    By applying nonequilibrium Green's functions in combination with the density functional theory, we investigate the effect of humidity on the electronic transport properties in carbon based nanoscale device. The results show that different humidity may form varied localized potential barrier, which is a very important factor to affect the stability of electronic transport in the nanoscale system. A mechanism for the humidity effect is suggested. -- Highlights: ► Electronic transport in carbon based nanoscale device. ► Humidity affects the stability of electronic transport. ► Different humidity may form varied localized potential barrier.

  13. Performance of GPS-devices for environmental exposure assessment.

    Science.gov (United States)

    Beekhuizen, Johan; Kromhout, Hans; Huss, Anke; Vermeulen, Roel

    2013-01-01

    Integration of individual time-location patterns with spatially resolved exposure maps enables a more accurate estimation of personal exposures to environmental pollutants than using estimates at fixed locations. Current global positioning system (GPS) devices can be used to track an individual's location. However, information on GPS-performance in environmental exposure assessment is largely missing. We therefore performed two studies. First, a commute-study, where the commute of 12 individuals was tracked twice, testing GPS-performance for five transport modes and two wearing modes. Second, an urban-tracking study, where one individual was tracked repeatedly through different areas, focused on the effect of building obstruction on GPS-performance. The median error from the true path for walking was 3.7 m, biking 2.9 m, train 4.8 m, bus 4.9 m, and car 3.3 m. Errors were larger in a high-rise commercial area (median error=7.1 m) compared with a low-rise residential area (median error=2.2 m). Thus, GPS-performance largely depends on the transport mode and urban built-up. Although ~85% of all errors were 50 m. Modern GPS-devices are useful tools for environmental exposure assessment, but large GPS-errors might affect estimates of exposures with high spatial variability.

  14. GaN nano-membrane for optoelectronic and electronic device applications

    KAUST Repository

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  15. Recent progress in organic electronics and photonics: A perspective on the future of organic devices

    KAUST Repository

    Bredas, Jean-Luc

    2016-01-01

    The fields of organic electronics and photonics have witnessed remarkable advances over the past few years. This progress bodes well for the increased utilization of organic materials as the active layers in devices for applications as diverse

  16. Effect of electronic device use on pedestrian safety : a literature review.

    Science.gov (United States)

    2016-04-01

    This literature review on the effect of electronic device use on pedestrian safety is part of a research project sponsored by the Office of Behavioral Safety Research in the National Highway Traffic Safety Administration (NHTSA). An extensive literat...

  17. Infective endocarditis and risk of death after cardiac implantable electronic device implantation

    DEFF Research Database (Denmark)

    Özcan, Cengiz; Raunsø, Jakob; Lamberts, Morten

    2017-01-01

    AIMS: To determine the incidence, risk factors, and mortality of infective endocarditis (IE) following implantation of a first-time, permanent, cardiac implantable electronic device (CIED). METHODS AND RESULTS: From Danish nationwide administrative registers (beginning in 1996), we identified all...

  18. System Testability Analysis for Complex Electronic Devices Based on Multisignal Model

    International Nuclear Information System (INIS)

    Long, B; Tian, S L; Huang, J G

    2006-01-01

    It is necessary to consider the system testability problems for electronic devices during their early design phase because modern electronic devices become smaller and more compositive while their function and structure are more complex. Multisignal model, combining advantage of structure model and dependency model, is used to describe the fault dependency relationship for the complex electronic devices, and the main testability indexes (including optimal test program, fault detection rate, fault isolation rate, etc.) to evaluate testability and corresponding algorithms are given. The system testability analysis process is illustrated for USB-GPIB interface circuit with TEAMS toolbox. The experiment results show that the modelling method is simple, the computation speed is rapid and this method has important significance to improve diagnostic capability for complex electronic devices

  19. Automatic cross-sectioning and monitoring system locates defects in electronic devices

    Science.gov (United States)

    Jacobs, G.; Slaughter, B.

    1971-01-01

    System consists of motorized grinding and lapping apparatus, sample holder, and electronic control circuit. Low power microscope examines device to pinpoint location of circuit defect, and monitor displays output signal when defect is located exactly.

  20. Electronic health records and cardiac implantable electronic devices: new paradigms and efficiencies.

    Science.gov (United States)

    Slotwiner, David J

    2016-10-01

    The anticipated advantages of electronic health records (EHRs)-improved efficiency and the ability to share information across the healthcare enterprise-have so far failed to materialize. There is growing recognition that interoperability holds the key to unlocking the greatest value of EHRs. Health information technology (HIT) systems including EHRs must be able to share data and be able to interpret the shared data. This requires a controlled vocabulary with explicit definitions (data elements) as well as protocols to communicate the context in which each data element is being used (syntactic structure). Cardiac implantable electronic devices (CIEDs) provide a clear example of the challenges faced by clinicians when data is not interoperable. The proprietary data formats created by each CIED manufacturer, as well as the multiple sources of data generated by CIEDs (hospital, office, remote monitoring, acute care setting), make it challenging to aggregate even a single patient's data into an EHR. The Heart Rhythm Society and CIED manufacturers have collaborated to develop and implement international standard-based specifications for interoperability that provide an end-to-end solution, enabling structured data to be communicated from CIED to a report generation system, EHR, research database, referring physician, registry, patient portal, and beyond. EHR and other health information technology vendors have been slow to implement these tools, in large part, because there have been no financial incentives for them to do so. It is incumbent upon us, as clinicians, to insist that the tools of interoperability be a prerequisite for the purchase of any and all health information technology systems.

  1. Chemical bath deposited Zn(Se,OH){sub x} on Cu(In,Ga)(S,Se){sub 2} for high efficiency thin film solar cells: growth kinetics, electronic properties, device performance and loss analysis

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A.; Weber, M. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie; Saad, M.; Harneit, W.; Lux-Steiner, M.C. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Festkoerperphysik; Karg, F. [Siemens Solar GmbH, Muenchen (Germany)

    2000-02-21

    Zn(Se,OH){sub x} thin films were grown on Cu(In,Ga)(S,Se){sub 2} (CIGSS) substrate by chemical bath technique. The initial formation and subsequent development of the CIGSS/Zn(Se,OH){sub x} interface are studied by XPS photoemission spectroscopy. Changes in the In 4d and Zn 3d core lines are used to directly determine the CIGSS/Zn(Se,OH){sub x} heterojunction valence band discontinuity and the consequent heterojunction band diagram. For device optimization the thickness and good surface coverage were controlled by XPS-UPS photoemission spectroscopy. A Zn(Se,OH){sub x} thickness below 10 nm has been found to be optimum for achieving a homogeneous and compact film on CIGSS. A remarkably high active area efficiency up to 15.7% (total area efficiency 13.26% with open circuit voltage (V{sub oc}) up to 565.74 mV, a fill factor (FF) of 71% and a short-circuit photocurrent density (J{sub ph}) greater than 33.01 mA/cm{sup 2}) are obtained. The internal parameters, such as the saturation currents, the series resistance R{sub s} and shunt resistance R{sub sh} are calculated. Major losses in these cells are due to the significant influence of the series resistance R{sub s} on the fill factor. (orig.)

  2. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

    Science.gov (United States)

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

    2013-09-27

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

  3. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

    International Nuclear Information System (INIS)

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-lae; Sheri, Ahmad Muqeem; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Hwang, Hyunsang

    2013-01-01

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption. In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal–oxide–semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers. (paper)

  4. The Impact of Electronic Reading Devices on Reading Speed and Comfort in Patients with Decreased Vision

    Directory of Open Access Journals (Sweden)

    Henry L. Feng

    2017-01-01

    Full Text Available Background/Aims. To evaluate the impact of back-illuminated and nonilluminated electronic reading devices on reading speed and comfort in patients with decreased vision. Methods. A prospective study involving a convenience sample of 167 patients at a single retina practice from January 2011 to December 2012. Participants were asked to read five different excerpts on five different media in a randomly assigned order. Media included a printed book at 12-point font (12PF, iPad2 at 12PF, iPad2 at 18-point font (18PF, Kindle2 at 12PF, and Kindle2 at 18PF. Reading speed in words per minute (WPM and medium preference were recorded and stratified by visual acuity (VA. Results. Mean reading speeds in WPM: iPad2 at 18PF (217.0, iPad2 at 12PF (209.1, Kindle2 at 18PF (183.3, Kindle2 at 12PF (177.7, and printed book at 12PF (176.8. Reading speed was faster on back-illuminated media compared to nonilluminated media. Text magnification minimized losses in reading performance with worsening patient VA. The majority of participants preferred reading on the iPad2 at 18PF. Conclusions. Back-illuminated devices may increase reading speed and comfort relative to nonilluminated devices and printed text, particularly in patients with decreased VA.

  5. Use of portable electronic devices in a hospital setting and their potential for bacterial colonization.

    Science.gov (United States)

    Khan, Amber; Rao, Amitha; Reyes-Sacin, Carlos; Hayakawa, Kayoko; Szpunar, Susan; Riederer, Kathleen; Kaye, Keith; Fishbain, Joel T; Levine, Diane

    2015-03-01

    Portable electronic devices are increasingly being used in the hospital setting. As with other fomites, these devices represent a potential reservoir for the transmission of pathogens. We conducted a convenience sampling of devices in 2 large medical centers to identify bacterial colonization rates and potential risk factors. Copyright © 2015 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

  6. Human Powered PiezoelectricBatteries to Supply Power to Wearable Electronic Devices.

    OpenAIRE

    Gonzalez, Jose' Luis; Rubio, Antonio; Moll, Francesc

    2002-01-01

    Consumer electronic equipments are becoming small, portable devices that provide users with a wide range of functionality, from communication to music playing. The battery technology and the power consumption of the device limit the size, weight and autonomous lifetime. One promising alternative to batteries (and fuel cells, that must be refueled as well) is to use the parasitic energy dissipated in the movement of the wearer of the device to power it. We analyze in this work the current stat...

  7. A device for determination of the electrical potential of a rocket carrying an electron gun

    International Nuclear Information System (INIS)

    Gringauz, K.I.; Musatov, L.S.; Shutte, N.M.; Beliashin, A.P.; Denstchikova, L.I.; Kopilov, V.F.

    1978-01-01

    Data on the principle of operation, sensors and electronics of a device for determination of the electrical potential relative to the surrounding medium of a rocket carrying an electric gun are presented. The device operated successfully on board an Eridan rocket during the ARAKS experiment. (Auth.)

  8. A surface diffuse scattering model for the mobility of electrons in surface charge coupled devices

    International Nuclear Information System (INIS)

    Ionescu, M.

    1977-01-01

    An analytical model for the mobility of electrons in surface charge coupled devices is studied on the basis of the results previously obtained, considering a surface diffuse scattering; the importance of the results obtained for a better understanding of the influence of the fringing field in surface charge coupled devices is discussed. (author)

  9. Silicon based nanogap device for investigating electronic transport through 12 nm long oligomers

    DEFF Research Database (Denmark)

    Strobel, S.; Albert, E.; Csaba, G.

    2009-01-01

    We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI s...

  10. 76 FR 79708 - Certain Portable Electronic Devices And Related Software; Submission for OMB Review; Comment...

    Science.gov (United States)

    2011-12-22

    ... present in the pdQ device. 6. Do the Accused iPhones meet the ``switching the mobile phone system from... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-721] Certain Portable Electronic Devices... into the United States, the sale for importation, and sale within the United States after importation...

  11. Defects in silicon effect on device performance and relationship to crystal growth conditions

    Science.gov (United States)

    Jastrzebski, L.

    1985-01-01

    A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

  12. Simultaneous specimen and stage cleaning device for analytical electron microscope

    Science.gov (United States)

    Zaluzec, Nestor J.

    1996-01-01

    An improved method and apparatus are provided for cleaning both a specimen stage, a specimen and an interior of an analytical electron microscope (AEM). The apparatus for cleaning a specimen stage and specimen comprising a plasma chamber for containing a gas plasma and an air lock coupled to the plasma chamber for permitting passage of the specimen stage and specimen into the plasma chamber and maintaining an airtight chamber. The specimen stage and specimen are subjected to a reactive plasma gas that is either DC or RF excited. The apparatus can be mounted on the analytical electron microscope (AEM) for cleaning the interior of the microscope.

  13. Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

    Science.gov (United States)

    Du, Xiang

    As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2

  14. Electronic transport in disordered graphene antidot lattice devices

    DEFF Research Database (Denmark)

    Power, Stephen; Jauho, Antti-Pekka

    2014-01-01

    Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated with a view towards application...

  15. Reactor oscillator - I - III, Part III - Electronic device

    International Nuclear Information System (INIS)

    Lolic, B.; Jovanovic, S.

    1961-12-01

    This report describes functioning of the reactor oscillator electronic system. Two methods of oscillator operation were discussed. The first method is so called method of amplitude modulation of the reactor power, and the second newer method is phase method. Both methods are planned for the present reactor oscillator

  16. Development of a flexible and bendable vibrotactile actuator based on wave-shaped poly(vinyl chloride)/acetyl tributyl citrate gels for wearable electronic devices

    Science.gov (United States)

    Park, Won-Hyeong; Bae, Jin Woo; Shin, Eun-Jae; Kim, Sang-Youn

    2016-11-01

    The paradigm of consumer electronic devices is being shifted from rigid hand-held devices to flexible/wearable devices in search of benefits such as enhanced usability and portability, excellent wear characteristics, and more functions in less space. However, the fundamental incompatibility of flexible/wearable devices and a rigid actuator brought forth a new issue obstructing commercialization of flexible/wearable devices. In this paper, we propose a new wave-shaped eco-friendly PVC gel, and a new flexible and bendable vibrotactile actuator that could easily be applied to wearable electronic devices. We explain the vibration mechanism of the proposed vibrotactile actuator and investigate its influence on the content of plasticizer for the performance of the proposed actuator. An experiment for measuring vibrational amplitude was conducted over a wide frequency range. The experiment clearly showed that the proposed vibrotactile actuator could create a variety of haptic sensations in wearable devices.

  17. Improving the Performance of Semiconductor Sensor Devices Using Surface Functionalization

    Science.gov (United States)

    Rohrbaugh, Nathaniel W.

    As production and understanding of III-nitride growth has progressed, this class of material has been used for its semiconducting properties in the fields of computer processing, microelectronics, and LEDs. As understanding of materials properties has advanced, devices were fabricated to be sensitive to environmental surroundings such as pH, gas, or ionic concentration. Simultaneously the world of pharmaceuticals and environmental science has come to the age where the use of wearable devices and active environmental sensing can not only help us learn more about our surroundings, but help save lives. At the crossroads of these two fields work has been done in marrying the high stability and electrical properties of the III-nitrides with the needs of a growing sensor field for various environments and stimuli. Device architecture can only get one so far, and thus the need for well understood surface functionalization techniques has arisen in the field of III-nitride environmental sensing. Many existing schemes for functionalization involve chemistries that may be unfriendly to a biological environment, unstable in solution, or expensive to produce. One possible solution to these issues is the work presented here, which highlights a surface modification scheme utilizing phosphonic acid based chemistry and biomolecular attachment. This dissertation presents a set of studies and experiments quantifying and analyzing the response behaviors of AlGaN/GaN field effect transistor (FET) devices via their interfacial electronic properties. Additional investigation was done on the modification of these surfaces, effects of stressful environmental conditions, and the utility of the phosphonic acid surface treatments. Signals of AlGaN/GaN FETs were measured as IDrain values and in the earliest study an average signal increase of 96.43% was observed when surfaces were incubated in a solution of a known recognition peptide sequence (SVSVGMKPSPRP). This work showed that even without

  18. Charge-coupled-device X-ray detector performance model

    Science.gov (United States)

    Bautz, M. W.; Berman, G. E.; Doty, J. P.; Ricker, G. R.

    1987-01-01

    A model that predicts the performance characteristics of CCD detectors being developed for use in X-ray imaging is presented. The model accounts for the interactions of both X-rays and charged particles with the CCD and simulates the transport and loss of charge in the detector. Predicted performance parameters include detective and net quantum efficiencies, split-event probability, and a parameter characterizing the effective thickness presented by the detector to cosmic-ray protons. The predicted performance of two CCDs of different epitaxial layer thicknesses is compared. The model predicts that in each device incomplete recovery of the charge liberated by a photon of energy between 0.1 and 10 keV is very likely to be accompanied by charge splitting between adjacent pixels. The implications of the model predictions for CCD data processing algorithms are briefly discussed.

  19. Constructal design of phase change material enclosures used for cooling electronic devices

    International Nuclear Information System (INIS)

    Kalbasi, Rasool; Salimpour, Mohammad Reza

    2015-01-01

    Recent developments in cooling methods for portable electronic devices have heightened the need for using the large latent heat capacity of phase change materials (PCM). The aim of the present study is to evaluate the thermal characteristics of a PCM-based heat sink with high conductive materials. The solution is acquired as a procession of optimization stages which starts with the elemental area and proceeds toward the first assembly. Every optimization stage is the result of maximizing the safe operation time without allowing the electronics to reach the critical temperature. Primarily, the degrees of freedom and constrains were defined and then by changing the geometrical parameters, the target function which is the maximization of operation time, was optimized. Results show that the melting process in rectangular enclosures with vertical fins attached to the heated bottom surface can be affected by the contact surface between the fin and PCM and the convection of the melted PCM. For a rectangular enclosure with a constant area, it is better to use wider enclosure than the square and thin one. Also results indicate that the ratio of the vertical fin thickness to the horizontal one does not have a considerable effect on performance. By increasing the number of enclosures, the contact surface is raised, but the performance is not necessarily improved. - Highlights: • Thermal characteristics of a finned PCM-based heat sink are studied. • Constructal theory was used to optimize the PCM enclosures. • By increasing the number of enclosures, the performance is not necessarily improved

  20. Fuel performance evaluation for the CAFE experimental device

    International Nuclear Information System (INIS)

    Giovedi, Claudia; Hirota, Leandro T.

    2011-01-01

    Fuel rod cladding material is the second barrier to prevent the release of radioactive inventories in a PWR reactor. In this sense, an important safety aspect is to assess the fuel behavior under operational conditions. This can be made by means of fuel performance codes and confirmed by experimental measurements. In order to evaluate the fuel behavior of fuel rods in steady-state conditions, it was designed an experimental irradiation device, the Nuclear Fuel Irradiation Circuit (CAFE-Mod1). This device will allow controlling the surface rod temperature, to measure the power associated to the rod and the evolution of fission gas release for a typical PWR fuel pin. However, to support the experimental irradiation program, it is extremely important to simulate the experimental conditions using a fuel performance code. The aim of this paper is to evaluate some parameters and aspects related to the fuel rod behavior during the irradiation program. This evaluation was carried out by means of an adapted fuel performance code. Obtained results have shown that besides of the variation observed for parameters, such as, fuel temperature and fission gas release as a function of fuel enrichment level, the fuel rod integrity was preserved in all studied conditions. (author)

  1. A Systematic Approach for Understanding and Modeling the Performance of Network Security Devices

    OpenAIRE

    Beyene, Yordanos

    2014-01-01

    In this dissertation, we attempt to understand and predict the performance of security devices. More specifically, we examine the following types of questions: (a) Given a security device, and a traffic load, can we predict the performance of the device? (b) Given a traffic load and a security device, how can we tune the performance of the device to achieve the desired trade-off between security and performance? We consider both stateful firewalls and Network Intrusion Prevention systems (NIP...

  2. Electronic device for automatic control of exposure in radiography

    International Nuclear Information System (INIS)

    Pendharkar, A.S.; Jayakumar, T.K.

    1977-01-01

    An electronic instrument for calculating and controlling exposure in radiography practice using radioisotopes is described. When using this equipment, only factor to be known is the dose required by the film for a given density and the thickness of material inspected. It eliminates all the problems arising out of various parameters such as source decay etc in the conventional procedure for calculating exposure time. Principle of operation, the electronic circuitry adopted and the functional aspects of the system are described in detail. Exposure doses for different industrial films have been related to the instrumental readouts. The system reproducibility and reliability have been evaluated. The advantages and limitations of the present system and the future development to overcome the problems are indicated. (author)

  3. Activating students' interest in lectures and practical courses using their electronic devices

    NARCIS (Netherlands)

    Wijtmans, M.; van Rens, L.; van Muijlwijk- Koezen, J.E.

    2014-01-01

    Interactive teaching with larger groups of students can be a challenge, but the use of mobile electronic devices by students (smartphones, tablets, laptops) can be used to improve classroom interaction. We have examined several types of tasks that can be electronically enacted in classes and

  4. 78 FR 16707 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Science.gov (United States)

    2013-03-18

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2943] Certain Electronic Devices Having Placeshifting... International Trade Commission (USITC): http://edis.usitc.gov . \\3\\ Electronic Document Information System (EDIS...; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION...

  5. 78 FR 2437 - Corrected: Certain Cases For Portable Electronic Devices; Notice of Receipt of Complaint...

    Science.gov (United States)

    2013-01-11

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2927] Corrected: Certain Cases For Portable Electronic...: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Cases For Portable Electronic Devices...

  6. 77 FR 4059 - Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof; Receipt...

    Science.gov (United States)

    2012-01-26

    ... INTERNATIONAL TRADE COMMISSION [DN 2869] Certain Electronic Devices for Capturing and Transmitting... Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled In Re Certain Electronic...

  7. Thermal protection of electronic devices with the Nylon6/66-PEG nanofiber membranes

    OpenAIRE

    Li Ya; Li Xue-Weis; He Ji-Huan; Wang Ping

    2014-01-01

    Phase change materials for thermal energy storage have been widely applied to clothing insulation, electronic products of heat energy storage. The thermal storage potential of the nanofiber membranes was analyzed using the differential scanning calorimetry. Effect of microstructure of the membrane on energy storage was analyzed, and its applications to electronic devices were elucidated.

  8. 78 FR 56737 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-09-13

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons are...

  9. 78 FR 49764 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-08-15

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review n... for this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc...

  10. 78 FR 72712 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-12-03

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov...

  11. Exploring coherent transport through π-stacked systems for molecular electronic devices

    DEFF Research Database (Denmark)

    Li, Qian; Solomon, Gemma

    2014-01-01

    Understanding electron transport across π-stacked systems can help to elucidate the role of intermolecular tunneling in molecular junctions and potentially with the design of high-efficiency molecular devices. Here we show how conjugation length and substituent groups influence the electron trans...

  12. Double deflection system for an electron beam device

    International Nuclear Information System (INIS)

    Parker, N.W.; Crewe, A.V.

    1978-01-01

    A double deflection scanning system for electron beam instruments is provided embodying a means of correcting isotropic coma, and anisotropic coma aberrations induced by the magnetic lens of such an instrument. The scanning system deflects the beam prior to entry into the magnetic lens from the normal on-axis intersection of the beam with the lens according to predetermined formulas and thereby reduces the aberrations

  13. Electronics: Mott Transistor: Fundamental Studies and Device Operation Mechanisms

    Science.gov (United States)

    2016-03-21

    display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. Harvard University Office for Sponsored Programs...including journal references , in the following categories: (b) Papers published in non-peer-reviewed journals (N/A for none) 03/21/2016 03/21/2016 03...limited kinetics of electron doping in correlated oxides, Applied Physics Letters (07 2015) TOTAL: 1 Books Number of Manuscripts: Patents Submitted

  14. Latest progress in gallium-oxide electronic devices

    Science.gov (United States)

    Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita; Nakata, Yoshiaki; Lin, Chia-Hung; Kamimura, Takafumi; Ravikiran, Lingaparthi; Sasaki, Kohei; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao

    2018-02-01

    Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

  15. Performance and Economic Analysis of Distributed Power Electronics in Photovoltaic Systems

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C.; Marion, B.; Granata, J.; Gonzalez, S.

    2011-01-01

    Distributed electronics like micro-inverters and DC-DC converters can help recover mismatch and shading losses in photovoltaic (PV) systems. Under partially shaded conditions, the use of distributed electronics can recover between 15-40% of annual performance loss or more, depending on the system configuration and type of device used. Additional value-added features may also increase the benefit of using per-panel distributed electronics, including increased safety, reduced system design constraints and added monitoring and diagnostics. The economics of these devices will also become more favorable as production volume increases, and integration within the solar panel?s junction box reduces part count and installation time. Some potential liabilities of per-panel devices include increased PV system cost, additional points of failure, and an insertion loss that may or may not offset performance gains under particular mismatch conditions.

  16. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices

    KAUST Repository

    Beljonne, David

    2011-02-08

    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

  17. Plasma electron density measurement with multichannel microwave interferometer on the HL-1 tokamak device

    International Nuclear Information System (INIS)

    Xu Deming; Zhang Hongyin; Liu Zetian; Ding Xuantong; Li Qirui; Wen Yangxi

    1989-11-01

    A multichannel microwave interferometer which is composed of different microwave interferometers (one 2 mm band, one 4 mm band and two 8 mm band) has been used to measure the plasma electron density on HL-1 tokamak device. The electron density approaching to 5 x 10 13 cm -3 is measured by a 2 mm band microwave interferometer. In the determinable range, the electron density profile in the cross-section on HL-1 device has been measured by this interferometer. A microcomputer data processing system is also developed

  18. Electronic spectrum of a deterministic single-donor device in silicon

    International Nuclear Information System (INIS)

    Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

    2013-01-01

    We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants

  19. The use of electronic devices for communication with colleagues and other healthcare professionals - nursing professionals' perspectives.

    Science.gov (United States)

    Koivunen, Marita; Niemi, Anne; Hupli, Maija

    2015-03-01

    The aim of the study is to describe nursing professionals' experiences of the use of electronic devices for communication with colleagues and other healthcare professionals. Information and communication technology applications in health care are rapidly expanding, thanks to the fast-growing penetration of the Internet and mobile technology. Communication between professionals in health care is essential for patient safety and quality of care. Implementing new methods for communication among healthcare professionals is important. A cross-sectional survey was used in the study. The data were collected in spring 2012 using an electronic questionnaire with structured and open-ended questions. The target group comprised the nursing professionals (N = 567, n = 123) in one healthcare district who worked in outpatient clinics in publically funded health care in Finland. Nursing professionals use different electronic devices for communication with each other. The most often used method was email, while the least used methods were question-answer programmes and synchronous communication channels on the Internet. Communication using electronic devices was used for practical nursing, improving personnel competences, organizing daily operations and administrative tasks. Electronic devices may speed up the management of patient data, improve staff cooperation and competence and make more effective use of working time. The obstacles were concern about information security, lack of technical skills, unworkable technology and decreasing social interaction. According to our findings, despite the obstacles related to use of information technology, the use of electronic devices to support communication among healthcare professionals appears to be useful. © 2014 John Wiley & Sons Ltd.

  20. Design and Testing of Electronic Devices for Harsh Environments

    CERN Document Server

    Nico, Costantino

    This thesis reports an overview and the main results of the research activity carried out within the PhD programme in Information Engineering of the University of Pisa (2010-2012). The research activity has been focused on different fields, including Automotive and High Energy Physics experiments, according to a common denominator: the development of electroni c devices and systems operating in harsh environments. There are many applications that forc e the adoption of design methodologies and strategies focused on this type of envir onments: military, biom edical, automotive, industrial and space. The development of solutions fulfilling specific operational requirements, therefore represents an interesting field of research. The first research activity has been framed within the ATHENIS project, funded by the CORDIS Commission of the European Community, and aiming at the development of a System-on-Chip, a r egulator for alternators employed on vehicles, presenting both configurability an d t...

  1. Nanoporous metal film: An energy-dependent transmission device for electron waves

    International Nuclear Information System (INIS)

    Grech, S.; Degiovanni, A.; Lapena, L.; Morin, R.

    2011-01-01

    We measure electron transmission through free-standing ultrathin nanoporous gold films, using the coherent electron beam emitted by sharp field emission tips in a low energy electron projection microscope setup. Transmission coefficient versus electron wavelength plots show periodic oscillations between 75 and 850 eV. These oscillations result from the energy dependence of interference between paths through the gold and paths through the nanometer-sized pores of the film. We reveal that these films constitute high transmittance quantum devices acting on electron waves through a wavelength-dependent complex transmittance defined by the porosity and the thickness of the film.

  2. RPC performance vs. front-end electronics

    International Nuclear Information System (INIS)

    Cardarelli, R.; Aielli, G.; Camarri, P.; Di Ciaccio, A.; Di Stante, L.; Liberti, B.; Pastori, E.; Santonico, R.; Zerbini, A.

    2012-01-01

    Moving the amplification from the gas to the front-end electronics was a milestone in the development of Resistive Plate Chambers. Here we discuss the historical evolution of RPCs and we show the results obtained with newly developed front-end electronics with threshold in the fC range.

  3. Symmetric low-voltage powering system for relativistic electronic devices

    International Nuclear Information System (INIS)

    Agafonov, A.V.; Lebedev, A.N.; Krastelev, E.G.

    2005-01-01

    A special driver for double-sided powering of relativistic magnetrons and several methods of localized electron flow forming in the interaction region of relativistic magnetrons are proposed and discussed. Two experimental installations are presented and discussed. One of them is designed for laboratory research and demonstration experiments at a rather low voltage. The other one is a prototype of a full-scale installation for an experimental research at relativistic levels of voltages on the microwave generation in the new integrated system consisting of a relativistic magnetron and symmetrical induction driver

  4. Interfacial and Thin Film Chemistry in Electron Device Fabrication

    Science.gov (United States)

    1992-01-01

    Chemistry During Electronic Processing" by Professor Richard Osgood, Jr.; "In Situ Optical Diagnostics of Semiconductors Prepared by Laser Chemical Processing...N(Igde Area Code) 22c OFF ft SYMBO. Professors Georee Flynn and Richard Os~ood I MSL DD Form 1473, JUN 86 Previous edotions are obsolete SECURITY...and D. L. Smith, Phys.I Rev. Lett. 62, 649 (1989). 19. E. A. Caridi, T. Y. Chang, K. W. Goossen and L. F. Eastman, AOLi Phvs. Tett. 56, 659 (1990). 1

  5. Studying the impact of carbon on device performance for strained-Si MOSFETs

    International Nuclear Information System (INIS)

    Lee, M.H.; Chang, S.T.; Peng, C.-Y.; Hsieh, B.-F.; Maikap, S.; Liao, S.-H.

    2008-01-01

    The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ∼40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (D it ) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices

  6. Do in-car devices affect experienced users' driving performance?

    Directory of Open Access Journals (Sweden)

    Allert S. Knapper

    2015-07-01

    Full Text Available Distracted driving is considered to be an important factor in road safety. To investigate how experienced user's driving behaviour is affected by in-vehicle technology, a fixed-base driving simulator was used. 20 participants drove twice in a rich simulated traffic environment while performing secondary, i.e. mobile phone and navigation system tasks. The results show that mean speed was lower in all experimental conditions, compared to baseline driving, while subjective effort increased. Lateral performance deteriorated only during visual–manual tasks, i.e. texting and destination entry, in which the participants glanced off the forward road for a substantial amount of time. Being experienced in manipulating in-car devices does not solve the problem of dual tasking when the primary task is a complex task like driving a moving vehicle. The results and discussion may shed some light on the current debate regarding phone use hazards.

  7. Brain inspired high performance electronics on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2014-06-01

    Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

  8. Electron spin for classical information processing: a brief survey of spin-based logic devices, gates and circuits

    International Nuclear Information System (INIS)

    Bandyopadhyay, Supriyo; Cahay, Marc

    2009-01-01

    In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information processing device invariably causes current flow and an associated dissipation. Replacing 'charge' with the 'spin' of an electron to encode information may eliminate much of this dissipation and lead to more energy-efficient 'green electronics'. This realization has spurred significant research in spintronic devices and circuits where spin either directly acts as the physical variable for hosting information or augments the role of charge. In this review article, we discuss and elucidate some of these ideas, and highlight their strengths and weaknesses. Many of them can potentially reduce energy dissipation significantly, but unfortunately are error-prone and unreliable. Moreover, there are serious obstacles to their technological implementation that may be difficult to overcome in the near term. This review addresses three constructs: (1) single devices or binary switches that can be constituents of Boolean logic gates for digital information processing, (2) complete gates that are capable of performing specific Boolean logic operations, and (3) combinational circuits or architectures (equivalent to many gates working in unison) that are capable of performing universal computation. (topical review)

  9. The stability of liquid-filled matrix ionization chamber electronic portal imaging devices for dosimetry purposes

    International Nuclear Information System (INIS)

    Louwe, R.J.W.; Tielenburg, R.; Ingen, K.M. van; Mijnheer, B.J.; Herk, M.B. van

    2004-01-01

    This study was performed to determine the stability of liquid-filled matrix ionization chamber (LiFi-type) electronic portal imaging devices (EPID) for dosimetric purposes. The short- and long-term stability of the response was investigated, as well as the importance of factors influencing the response (e.g., temperature fluctuations, radiation damage, and the performance of the electronic hardware). It was shown that testing the performance of the electronic hardware as well as the short-term stability of the imagers may reveal the cause of a poor long-term stability of the imager response. In addition, the short-term stability was measured to verify the validity of the fitted dose-response curve immediately after beam startup. The long-term stability of these imagers could be considerably improved by correcting for room temperature fluctuations and gradual changes in response due to radiation damage. As a result, the reproducibility was better than 1% (1 SD) over a period of two years. The results of this study were used to formulate recommendations for a quality control program for portal dosimetry. The effect of such a program was assessed by comparing the results of portal dosimetry and in vivo dosimetry using diodes during the treatment of 31 prostate patients. The improvement of the results for portal dosimetry was consistent with the deviations observed with the reproducibility tests in that particular period. After a correction for the variation in response of the imager, the average difference between the measured and prescribed dose during the treatment of prostate patients was -0.7%±1.5% (1 SD), and -0.6%±1.1% (1 SD) for EPID and diode in vivo dosimetry, respectively. It can be concluded that a high stability of the response can be achieved for this type of EPID by applying a rigorous quality control program

  10. PROTEOTRONICS: The emerging science of protein-based electronic devices

    International Nuclear Information System (INIS)

    Alfinito, Eleonora; Pousset, Jeremy; Reggiani, Lino

    2015-01-01

    Protein-mediated charge transport is of relevant importance in the design of protein based electronics and in attaining an adequate level of understanding of protein functioning. This is particularly true for the case of transmembrane proteins, like those pertaining to the G protein coupled receptors (GPCRs). These proteins are involved in a broad range of biological processes like catalysis, substance transport, etc., thus being the target of a large number of clinically used drugs. This paper briefly reviews a variety of experiments devoted to investigate charge transport in proteins and present a unified theoretical model able to relate macroscopic experimental results with the conformations of the amino acids backbone of the single protein. (paper)

  11. Optical sensor array platform based on polymer electronic devices

    NARCIS (Netherlands)

    Koetse, M.M.; Rensing, P.A.; Sharpe, R.B.A.; Heck, G.T. van; Allard, B.A.M.; Meulendijks, N.N.M.M.; Kruijt, P.G.M.; Tijdink, M.W.W.J.; Zwart, R.M. de; Houben, R.J.; Enting, E.; Veen, S.J.J.F. van; Schoo, H.F.M.

    2007-01-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be

  12. Performance Verification for Safety Injection Tank with Fluidic Device

    International Nuclear Information System (INIS)

    Yune, Seok Jeong; Kim, Da Yong

    2014-01-01

    In LBLOCA, the SITs of a conventional nuclear power plant deliver excessive cooling water to the reactor vessel causing the water to flow into the containment atmosphere. In an effort to make it more efficient, Fluidic Device (FD) is installed inside a SIT of Advanced Power Reactor 1400 (APR 1400). FD, a complete passive controller which doesn't require actuating power, controls injection flow rates which are susceptible to a change in the flow resistance inside a vortex chamber of FD. When SIT Emergency Core Cooling (ECC) water level is above the top of the stand pipe, the water enters the vortex chamber through both the top of the stand pipe and the control ports resulting in injection of the water at a large flow rate. When the water level drops below the top of the stand pipe, the water only enters the vortex chamber through the control ports resulting in vortex formation in the vortex chamber and a relatively small flow injection. Performance verification of SIT shall be carried out because SITs play an integral role to mitigate accidents. In this paper, the performance verification method of SIT with FD is presented. In this paper, the equations for calculation of flow resistance coefficient (K) are induced to evaluate on-site performance of APR 1400 SIT with FD. Then, the equations are applied to the performance verification of SIT with FD and good results are obtained

  13. Ignitor electrode system design for the pulses electron irradiators device

    International Nuclear Information System (INIS)

    Lely Susita RM; Ihwanul Aziz

    2016-01-01

    The designed ignitor electrode system is a system used to initiate the plasma discharge. It consists of two pieces which are placed on both side of the plasma vessel. Each of the ignitor electrode system consists of a cathode, an anode and insulator between the cathode and the anode. The best cathode material for ignitor electrode system is Mg due to its lowest ion erosion rate (γi =11.7 μg/C) and its low cohesive energy (1.51 eV). The specifications of ignitor electrode system designed for the pulse electron irradiators is as follow: Mg cathode materials in the form of rod having a diameter of 6.35 mm and length of 76.75 mm. Anode material are made of non magnetic of SS 304 cylinder shaped with an outer diameter of 88.53 mm, an inner diameter of 81.53 mm and a thickness of 3.50 mm. Insulating material between the cathode and the anode is made of teflon cylinder shaped, outer diameter of 9.50 mm, an inner diameter of 6.35 mm and a length of 30 mm. Based on the ignitor electrode system design, the next step is construction and function test of the ignitor electrode system. (author)

  14. Performance of a malaria microscopy image analysis slide reading device

    Directory of Open Access Journals (Sweden)

    Prescott William R

    2012-05-01

    current manifestation, the device performs at a level comparable to that of many human slide readers. Because its use requires minimal additional equipment and it uses standard stained slides as starting material, its widespread adoption may eliminate the current uncertainty about the quality of microscopic diagnoses worldwide.

  15. An electroluminescence device for printable electronics using coprecipitated ZnS:Mn nanocrystal ink

    International Nuclear Information System (INIS)

    Toyama, T; Hama, T; Adachi, D; Nakashizu, Y; Okamoto, H

    2009-01-01

    Electroluminescence (EL) devices for printable electronics using coprecipitated ZnS:Mn nanocrystal (NC) ink are demonstrated. The EL properties of these devices were investigated along with the structural and optical properties of ZnS:Mn NCs with an emphasis on their dependence on crystal size. Transmission electron microscopy and x-ray diffraction studies revealed that the NCs, with a crystal size of 3-4 nm, are nearly monodisperse; the crystal size can be controlled by the Zn 2+ concentration in the starting solution for coprecipitation. The results of optical studies indicate the presence of quantum confinement effects; in addition, the NC surfaces are well passivated, regardless of the crystal size. Finally, an increase in the luminance of EL devices with a decrease in crystal size is observed, which suggests the excitation mechanism of ZnS:Mn NC EL devices.

  16. Personalized Remote Monitoring of the Atrial Fibrillation Patients with Electronic Implant Devices

    Directory of Open Access Journals (Sweden)

    Gokce B. Laleci

    2011-01-01

    Full Text Available Cardiovascular Implantable Electronic Devices (CIED are gaining popularity in treating patients with heart disease. Remote monitoring through care management systems enables continuous surveillance of such patients by checking device functions and clinical events. These care management systems include decision support capabilities based on clinical guidelines. Data input to such systems are from different information sources including medical devices and Electronic Health Records (EHRs. Although evidence-based clinical guidelines provides numerous benefits such as standardized care, reduced costs, efficient and effective care management, they are currently underutilized in clinical practice due to interoperability problems among different healthcare data sources. In this paper, we introduce the iCARDEA care management system for atrial fibrillation patients with implant devices and describe how the iCARDEA care plan engine executes the clinical guidelines by seamlessly accessing the EHR systems and the CIED data through standard interfaces.

  17. Off-axis electron holography for the measurement of active dopants in silicon semiconductor devices

    International Nuclear Information System (INIS)

    Cooper, David

    2016-01-01

    There is a need in the semiconductor industry for a dopant profiling technique with nm-scale resolution. Here we demonstrate that off-axis electron holography can be used to provide maps of the electrostatic potential in semiconductor devices with nm-scale resolution. In this paper we will discuss issues regarding the spatial resolution and precision of the technique. Then we will discuss problems with specimen preparation and how this affects the accuracy of the measurements of the potentials. Finally we show results from experimental off-axis electron holography applied to nMOS and pMOS CMOS devices grown on bulk silicon and silicon- on-insulator type devices and present solutions to common problems that are encountered when examining these types of devices. (paper)

  18. Medical device integration: CIOs must bridge the digital divide between devices and electronic medical records.

    Science.gov (United States)

    Raths, David

    2009-02-01

    To get funding approved for medical device integration, ClOs suggest focusing on specific patient safety or staff efficiency pain points. Organizations that make clinical engineering part of their IT team report fewer chain-of-command issues. It also helps IT people understand the clinical goals because the engineering people have been working closely with clinicians for years. A new organization has formed to work on collaboration between clinical engineers and IT professionals. For more information, go to www.ceitcollaboration.org. ECRI Institute has written a guide to handling the convergence of medical technology and hospital networks. Its "Medical Technology for the IT Professional: An Essential Guide for Working in Today's Healthcare Setting" also details how IT professionals can assist hospital technology planning and acquisition, and provide ongoing support for IT-based medical technologies. For more information, visit www.ecri.org/ITresource.

  19. The impact of an electronic monitoring and reminder device on patient compliance with antihypertensive therapy

    DEFF Research Database (Denmark)

    Christensen, Arne; Christrup, Lona Louring; Fabricius, Paul Erik

    2010-01-01

    . In the first half of the study, patients using the device reported 91% compliance versus 85% in the control group. This difference diminished after crossover (88 versus 86%). BP was not affected. Electronic monitoring data on compliance revealed taking, dosing and timing compliance between 45 and 52% in study...... to be effective in improving patient compliance to some extent, but the combined effect has not been documented. OBJECTIVE: To assess the impact of an electronic reminder and monitoring device on patient compliance and BP control. METHODS: All patients received medical treatment with telmisartan once daily...... and were randomized to either electronic compliance monitoring with a reminder and monitoring device or standard therapy for 6 months. Both groups were crossed over after 6 months. Intervention effectiveness was assessed using self-reported compliance and BP. RESULTS: Data from 398 patients were analysed...

  20. Using mobile electronic devices to deliver educational resources in developing countries.

    Science.gov (United States)

    Mazal, Jonathan Robert; Ludwig, Rebecca

    2015-01-01

    Developing countries have far fewer trained radiography professionals than developed countries, which exacerbates the limited access to imaging services. The lack of trained radiographers reflects, in part, limited availability of radiographer-specific educational resources. Historically, organizations that provided such resources in the developing world faced challenges related to the limited stock of current materials as well as expenses associated with shipping and delivery. Four mobile electronic devices (MEDs) were loaded with educational content (e-books, PDFs, and digital applications) spanning major radiography topics. The MEDs were distributed to 4 imaging departments in Ghana, India, Nepal, and Nigeria based on evidence of need for radiography-specific resources, as revealed by survey responses. A cost comparison of postal delivery vs digital delivery of educational content was performed. The effectiveness of delivering additional content via Wi-Fi transmission also was evaluated. Feedback was solicited on users' experience with the MEDs as a delivery tool for educational content. An initial average per e-book expense of $30.05, which included the cost of the device, was calculated for the MED delivery method compared with $15.56 for postal delivery of printed materials. The cost of the MED delivery method was reduced to an average of $10.05 for subsequent e-book deliveries. Additional content was successfully delivered via Wi-Fi transmission to all recipients during the 3-month follow-up period. Overall user feedback on the experience was positive, and ideas for enhancing the MED-based method were identified. Using MEDs to deliver radiography-specific educational content appears to be more cost effective than postal delivery of printed materials on a long-term basis. MEDs are more efficient for providing updates to educational materials. Customization of content to department needs, and using projector devices could enhance the usefulness of MEDs for

  1. Transaxillary Subpectoral Placement of Cardiac Implantable Electronic Devices in Young Female Patients

    Directory of Open Access Journals (Sweden)

    Joo Hyun Oh

    2017-01-01

    Full Text Available BackgroundThe current indications of cardiac implantable electronic devices (CIEDs have expanded to include young patients with serious cardiac risk factors, but CIED placement has the disadvantage of involving unsightly scarring and bulging of the chest wall. A collaborative team of cardiologists and plastic surgeons developed a technique for the subpectoral placement of CIEDs in young female patients via a transaxillary approach.MethodsFrom July 2012 to December 2015, subpectoral CIED placement via an axillary incision was performed in 10 young female patients, with a mean age of 25.9 years and mean body mass index of 20.1 kg/m2. In the supine position, with the patient's shoulder abducted, an approximately 5-cm linear incision was made along one of the deepest axillary creases. The submuscular plane was identified at the lateral border of the pectoralis major, and the dissection continued over the clavipectoral fascia until the subpectoral pocket could securely receive a pulse generator. Slight upward dissection also exposed an entrance to the subclavian vein, allowing the cardiology team to gain access to the vein. One patient with dilated cardiomyopathy underwent augmentation mammoplasty and CIED insertion simultaneously.ResultsOne case of late-onset device infection occurred. All patients were highly satisfied with the results and reported that they would recommend the procedure to others.ConclusionsWith superior aesthetic outcomes compared to conventional methods, the subpectoral placement of CIEDs via a transaxillary approach is an effective, single-incision method to hide operative scarring and minimize bulging of the device, and is particularly beneficial for young female or lean patients.

  2. Sodium Hypochlorite Treatment and Nitinol Performance for Medical Devices

    Science.gov (United States)

    Weaver, J. D.; Gutierrez, E. J.; Nagaraja, S.; Stafford, P. R.; Sivan, S.; Di Prima, M.

    2017-09-01

    Processing of nitinol medical devices has evolved over the years as manufacturers have identified methods of reducing surface defects such as inclusions. One recent method proposes to soak nitinol medical devices in a 6% sodium hypochlorite (NaClO) solution as a means of identifying surface inclusions. Devices with surface inclusions could in theory then be removed from production because inclusions would interact with NaClO to form a visible black material on the nitinol surface. To understand the effects of an NaClO soak on performance, we compared as-received and NaClO-soaked nitinol wires with two different surface finishes (black oxide and electropolished). Pitting corrosion susceptibility was equivalent between the as-received and NaClO-soaked groups for both surface finishes. Nickel ion release increased in the NaClO-soaked group for black oxide nitinol, but was equivalent for electropolished nitinol. Fatigue testing revealed a lower fatigue life for NaClO-soaked black oxide nitinol at all alternating strains. With the exception of 0.83% alternating strain, NaClO-soaked and as-received electropolished nitinol had similar average fatigue life, but the NaClO-soaked group showed higher variability. NaClO-soaked electropolished nitinol had specimens with the lowest number of cycles to fracture for all alternating strains tested with the exception of the highest alternating strain 1.2%. The NaClO treatment identified only one specimen with surface inclusions and caused readily identifiable surface damage to the black oxide nitinol. Damage from the NaClO soak to electropolished nitinol surface also appears to have occurred and is likely the cause of the increased variability of the fatigue results. Overall, the NaClO soak appears to not lead to an improvement in nitinol performance and seems to be damaging to the nitinol surface in ways that may not be detectable with a simple visual inspection for black material on the nitinol surface.

  3. Proceedings of the national conference on vacuum electronic devices and applications: souvenir and extended abstracts

    International Nuclear Information System (INIS)

    2012-01-01

    Vacuum electronic devices have carved out a strategic niche for themselves in the areas of satellite based communications and broadcasting, industrial and medical accelerators, and, high power RF systems required in high energy particle accelerators, accelerator driven sub-critical systems, plasma heating systems in nuclear fusion reactors for power generation etc. Besides, these devices continue to have their major applications in various defence related communication, RADAR and ECM systems. Papers relevant to INIS are indexed separately

  4. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    CERN Document Server

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  5. Electronic Equipment of Self-Actuated Mobile Device for Load Carrying

    Directory of Open Access Journals (Sweden)

    T. Janecka

    1994-12-01

    Full Text Available The device dealt in this work is determined namely for carrying invalid persons on various types of stairs or other not flat surfaces. But it can serve also to other purposes.To enable fulfilling all given demands, the design was consulted with other research workers solving the tasks of similar features.Resulting mechanical device, enabling aspects of movement required, is controlled by electronic and microprocessor circuits that obtain the input information from sensitive units investigating the terrain.

  6. Examining Big Brother's Purpose for Using Electronic Performance Monitoring

    Science.gov (United States)

    Bartels, Lynn K.; Nordstrom, Cynthia R.

    2012-01-01

    We examined whether the reason offered for electronic performance monitoring (EPM) influenced participants' performance, stress, motivation, and satisfaction. Participants performed a data-entry task in one of five experimental conditions. In one condition, participants were not electronically monitored. In the remaining conditions, participants…

  7. Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

    KAUST Repository

    Wang, Lingfei

    2015-06-22

    Searching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d−d transitions within the upper and lower Mott-Hubbard bands and p−d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.

  8. Performance Gains of Propellant Management Devices for Liquid Hydrogen Depots

    Science.gov (United States)

    Hartwig, Jason W.; McQuillen, John B.; Chato, David J.

    2013-01-01

    This paper presents background, experimental design, and preliminary experimental results for the liquid hydrogen bubble point tests conducted at the Cryogenic Components Cell 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. The purpose of the test series was to investigate the parameters that affect liquid acquisition device (LAD) performance in a liquid hydrogen (LH2) propellant tank, to mitigate risk in the final design of the LAD for the Cryogenic Propellant Storage and Transfer Technology Demonstration Mission, and to provide insight into optimal LAD operation for future LH2 depots. Preliminary test results show an increase in performance and screen retention over the low reference LH2 bubble point value for a 325 2300 screen in three separate ways, thus improving fundamental LH2 LAD performance. By using a finer mesh screen, operating at a colder liquid temperature, and pressurizing with a noncondensible pressurant gas, a significant increase in margin is achieved in bubble point pressure for LH2 screen channel LADs.

  9. Improving Software Performance in the Compute Unified Device Architecture

    Directory of Open Access Journals (Sweden)

    Alexandru PIRJAN

    2010-01-01

    Full Text Available This paper analyzes several aspects regarding the improvement of software performance for applications written in the Compute Unified Device Architecture CUDA. We address an issue of great importance when programming a CUDA application: the Graphics Processing Unit’s (GPU’s memory management through ranspose ernels. We also benchmark and evaluate the performance for progressively optimizing a transposing matrix application in CUDA. One particular interest was to research how well the optimization techniques, applied to software application written in CUDA, scale to the latest generation of general-purpose graphic processors units (GPGPU, like the Fermi architecture implemented in the GTX480 and the previous architecture implemented in GTX280. Lately, there has been a lot of interest in the literature for this type of optimization analysis, but none of the works so far (to our best knowledge tried to validate if the optimizations can apply to a GPU from the latest Fermi architecture and how well does the Fermi architecture scale to these software performance improving techniques.

  10. Macroscale and microscale fracture toughness of microporous sintered Ag for applications in power electronic devices

    International Nuclear Information System (INIS)

    Chen, Chuantong; Nagao, Shijo; Suganuma, Katsuaki; Jiu, Jinting; Sugahara, Tohru; Zhang, Hao; Iwashige, Tomohito; Sugiura, Kazuhiko; Tsuruta, Kazuhiro

    2017-01-01

    The application of microporous sintered silver (Ag) as a bonding material to replace conventional die-bonding materials in power electronic devices has attracted considerable interest. Characterization of the mechanical properties of microporous Ag will enable its use in applications such as lead-free solder electronics and provide a fundamental understanding of its design principles. However, the material typically suffers from thermal and mechanical stress during its production fabrication, and service. In this work, we have studied the effect of microporous Ag specimen size on fracture toughness from the microscale to the macroscale. A focused ion beam was used to fabricate 20-, 10- and 5-μm-wide microscale specimens, which were of the same order of magnitude as the pore networks in the microporous Ag. Micro-cantilever bending tests revealed that fracture toughness decreased as the specimen size decreased. Conventional middle-cracked tensile tests were performed to determine the fracture toughness of the macroscale specimens. The microscale and macroscale fracture toughness results showed a clear size effect, which is discussed in terms of both the deformation behavior of crack tip and the influence of pore networks within Ag with different specimen sizes. Finite element model simulations showed that stress at the crack tip increased as the specimen size increased, which led to larger plastic deformation and more energy being consumed when the specimen fractured.

  11. Basic mechanisms of radiation effects on electronic materials and devices

    International Nuclear Information System (INIS)

    Winokur, P.S.

    1989-01-01

    Many defense and nuclear reactor systems require complementary metal-oxide semiconductor integrated circuits that are tolerant to high levels of radiation. This radiation can result from space, hostile environments or nuclear reactor and accelerator beam environments. In addition, many techniques used to fabricate today's complex very-large-scale integration circuits expose the circuits to ionizing radiation during the process sequence. Whatever its origin, radiation can cause significant damage to integrated-circuit materials. This damage can lead to circuit performance degradation, logic upset, and even catastrophic circuit failure. This paper provides a brief overview of the basic mechanisms for radiation damage to silicon-based integrated circuits. Primary emphasis is on the effects of total-dose ionizing radiation on metal-oxide-semiconductor (MOS) structures

  12. A video-amplifier device for the transmission-type electron microscope ELMISCOP I of Siemens

    International Nuclear Information System (INIS)

    Groboth, G.; Hoerl, E.M.

    1975-01-01

    In order to get a visual image of the sample at the final screen of a transmission-type electron microscope and to keep at the same time the sample at low temperature a video-amplifier device has been developed by the authors. Details about its design and the necessary reconstruction of the electron microscope equipment are given. The beam current density at the transparent screen is reduced to 10 -12 -10 -13 A.cm -2 . Moreover the costs of this video-amplifier device are lower than those available. (CR)

  13. Electronic Devices for Controlling the Very High Voltage in the ALICE TPC Detector

    CERN Document Server

    Boccioli, Marco

    2007-01-01

    The Time Projection Chamber (TPC) is the core of the ALICE experiment at CERN. The TPC Very High Voltage project covers the development of the control system for the power supply that generates the 100kV necessary for the drift field in the TPC. This paper reports on the project progress, introducing the control system architecture from the electronics up to the control level. All the electronic devices will be described, highlighting their communication issues, and the challenges in integrating these devices in a PLC-based control system.

  14. Atmospheric pressure plasmas for surface modification of flexible and printed electronic devices: A review

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyong Nam; Lee, Seung Min; Mishra, Anurag [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Yeom, Geun Young, E-mail: gyyeom@skku.edu [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2016-01-01

    Recently, non-equilibrium atmospheric pressure plasma, especially those operated at low gas temperatures, have become a topic of great interest for the processing of flexible and printed electronic devices due to several benefits such as the reduction of process and reactor costs, the employment of easy-to-handle apparatuses and the easier integration into continuous production lines. In this review, several types of typical atmospheric pressure plasma sources have been addressed, and the processes including surface treatment, texturing and sintering for application to flexible and printed electronic devices have been discussed.

  15. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (5th)

    Science.gov (United States)

    1994-10-07

    Associazione Elettrotecnica e Elettronica Italia Circuiti Componente Tecnologia Elettroniche CECC CENELEC Electronic Components Committee EC The Commission...compared to the results of 2D transient device simulations in cylinder coordinates as well as to 3D transient device simulations (Table 1, 2). M3 In...non- Sabs. abs. drift charge 3.3 3.7 6.3 6.1 M Qdrft / feCM 3D diffusion 6.3 13.6 3.0 12.8 device charge simu- Qdiffl fC V M (E Wl ation "R’ L L

  16. Emerging technologies to power next generation mobile electronic devices using solar energy

    Institute of Scientific and Technical Information of China (English)

    Dewei JIA; Yubo DUAN; Jing LIU

    2009-01-01

    Mobile electronic devices such as MP3, mobile phones, and wearable or implanted medical devices have already or will soon become a necessity in peoples' lives.However, the further development of these devices is restricted not only by the inconvenient charging process of the power module, but also by the soaring prices of fossil fuel and its downstream chain of electricity manipulation.In view of the huge amount of solar energy fueling the world biochemically and thermally, a carry-on electricity harvester embedded in portable devices is emerging as a most noteworthy research area and engineering practice for a cost efficient solution. Such a parasitic problem is intrinsic in the next generation portable devices. This paper is dedicated to presenting an overview of the photovoltaic strategy in the chain as a reference for researchers and practitioners committed to solving the problem.

  17. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  18. Compact toroidal energy storage device with relativistically densified electrons through the use of travelling magnetic waves

    International Nuclear Information System (INIS)

    Peter, W.; Faehl, R.J.

    1983-01-01

    A new concept for a small compact multimegajoule energy storage device utilizing relativistically densified electron beam circulating in a torus is presented. The electron cloud is produced through inductive charge injection by a travelling magnetic wave circulating the torus. Parameters are given for two representative toroidal energy storage devices, consisting of 1 m and 32 m in radius respectively, which could store more than 4 x 10 17 electrons and 30' MJ in energy. The concept utilizes the idea that large electric and magnetic fields can be produced by a partially space-charge neutralized intense relativistic electron beam which could become many orders of magnitude greater than the externally applied field confining the beam. In the present approach, the electron cloud densification can be achieved gradually by permitting multiple traversals of the magnetic wave around the torus. The magnetic mirror force acts on the orbital magnetic electron dipole moment and completely penetrates the entire electron cloud. As the electrons gain relativistic energies, the beam can be continuously densified at the front of the travelling wave, where the magnetic field is rising with time. The use of travelling magnetic wave to accelerate an electron cloud and the use of large electric field at the thusly accelerated cloud form the basis for a high beam intensity and hence high energy storage. Technical considerations and several potential applications, which include the driving of a powerful gyrotron, are discussed

  19. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    KAUST Repository

    Ho, Chih-Hsiang

    2017-06-27

    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

  20. Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

    Science.gov (United States)

    Brucker, G. J.; Van Gunten, O.; Stassinopoulos, E. G.; Shapiro, P.; August, L. S.; Jordan, T. M.

    1983-01-01

    This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

  1. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    KAUST Repository

    Ho, Chih-Hsiang; Tsai, Dung-Sheng; Lu, Chao; Kim, Soo Youn; Mungan, Selin; Yang, Shih-Guo; Zhang, Yuanzhi; He, Jr-Hau

    2017-01-01

    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

  2. Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

    Science.gov (United States)

    Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

    2018-05-23

    Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

  3. Transferred metal electrode films for large-area electronic devices

    International Nuclear Information System (INIS)

    Yang, Jin-Guo; Kam, Fong-Yu; Chua, Lay-Lay

    2014-01-01

    The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the minimum thickness of the polymer gate dielectric to typically more than 300 nm due to deep hot metal atom penetration and damage of the dielectric. We show here that the self-release layer transfer method recently developed for high-quality graphene transfer is also capable of giving high-quality metal thin-film transfers to produce high-performance capacitors and OFETs with superior dielectric breakdown strength even for ultrathin polymer dielectric films. Dielectric breakdown strengths up to 5–6 MV cm −1 have been obtained for 50-nm thin films of polystyrene and a cyclic olefin copolymer TOPAS ® (Zeon). High-quality OFETs with sub-10 V operational voltages have been obtained this way using conventional polymer dielectrics and a high-mobility polymer semiconductor poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene-2,5-diyl]. The transferred metal films can make reliable contacts without damaging ultrathin polymer films, self-assembled monolayers and graphene, which is not otherwise possible from evaporated or sputtered metal films

  4. Modulation transfer function and detective quantum efficiency of electron bombarded charge coupled device detector for low energy electrons

    International Nuclear Information System (INIS)

    Horacek, Miroslav

    2005-01-01

    The use of a thinned back-side illuminated charge coupled device chip as two-dimensional sensor working in direct electron bombarded mode at optimum energy of the incident signal electrons is demonstrated and the measurements of the modulation transfer function (MTF) and detective quantum efficiency (DQE) are described. The MTF was measured for energy of electrons 4 keV using an edge projection method and a stripe projection method. The decrease of the MTF for a maximum spatial frequency of 20.8 cycles/mm, corresponding to the pixel size 24x24 μm, is 0.75≅-2.5 dB, and it is approximately the same for both horizontal and vertical directions. DQE was measured using an empty image and the mixing factor method. Empty images were acquired for energies of electrons from 2 to 5 keV and for various doses, ranging from nearly dark image to a nearly saturated one. DQE increases with increasing energy of bombarded electrons and reaches 0.92 for electron energy of 5 keV. For this energy the detector will be used for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope

  5. Effect of Mesostructured Layer upon Crystalline Properties and Device Performance on Perovskite Solar Cells.

    Science.gov (United States)

    Listorti, Andrea; Juarez-Perez, Emilio J; Frontera, Carlos; Roiati, Vittoria; Garcia-Andrade, Laura; Colella, Silvia; Rizzo, Aurora; Ortiz, Pablo; Mora-Sero, Ivan

    2015-05-07

    One of the most fascinating characteristics of perovskite solar cells (PSCs) is the retrieved obtainment of outstanding photovoltaic (PV) performances withstanding important device configuration variations. Here we have analyzed CH3NH3PbI3-xClx in planar or in mesostructured (MS) configurations, employing both titania and alumina scaffolds, fully infiltrated with perovskite material or presenting an overstanding layer. The use of the MS scaffold induces to the perovskite different structural properties, in terms of grain size, preferential orientation, and unit cell volume, in comparison to the ones of the material grown with no constraints, as we have found out by X-ray diffraction analyses. We have studied the effect of the PSC configuration on photoinduced absorption and time-resolved photoluminescence, complementary techniques that allow studying charge photogeneration and recombination. We have estimated electron diffusion length in the considered configurations observing a decrease when the material is confined in the MS scaffold with respect to a planar architecture. However, the presence of perovskite overlayer allows an overall recovering of long diffusion lengths explaining the record PV performances obtained with a device configuration bearing both the mesostructure and a perovskite overlayer. Our results suggest that performance in devices with perovskite overlayer is mainly ruled by the overlayer, whereas the mesoporous layer influences the contact properties.

  6. Designing electronic anisotropy of three-dimensional carbon allotropes for the all-carbon device

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li-Chun, E-mail: xulichun@tyut.edu.cn; Song, Xian-Jiang; Yang, Zhi; Li, Xiu-Yan [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Wang, Ru-Zhi; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China)

    2015-07-13

    Extending two-dimensional (2D) graphene nanosheets to a three-dimensional (3D) network can enhance the design of all-carbon electronic devices. Based on the great diversity of carbon atomic bonding, we have constructed four superlattice-type carbon allotrope candidates, containing sp{sup 2}-bonding transport channels and sp{sup 3}-bonding insulating layers, using density functional theory. It was demonstrated through systematic simulations that the ultra-thin insulating layer with only three-atom thickness can switch off the tunneling transport and isolate the electronic connection between the adjacent graphene strips, and these alternating perpendicular strips also extend the electron road from 2D to 3D. Designing electronic anisotropy originates from the mutually perpendicular π bonds and the rare partial charge density of the corresponding carriers in insulating layers. Our results indicate the possibility of producing custom-designed 3D all-carbon devices with building blocks of graphene and diamond.

  7. Soluble fullerene derivatives : The effect of electronic structure on transistor performance and air stability

    NARCIS (Netherlands)

    Ball, James M.; Bouwer, Ricardo K.M.; Kooistra, Floris B.; Frost, Jarvist M.; Qi, Yabing; Buchaca Domingo, Ester; Smith, Jeremy; de Leeuw, Dago M.; Hummelen, Jan C.; Nelson, Jenny; Kahn, Antoine; Stingelin, Natalie; Bradley, Donal D.C.; Anthopoulos, Thomas D.

    2011-01-01

    The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic

  8. Performance of gas electron multiplier (GEM) detector

    International Nuclear Information System (INIS)

    Han, S. H.; Moon, B. S.; Kim, Y. K.; Chung, C. E.; Kang, H. D.; Cho, H. S.

    2002-01-01

    We have investigated in detail the operating properties of Gas Electron Multiplier (GEM) detectors with a double conical and a cylindrical structure in a wide range of external fields and GEM voltages. With the double conical GEM, the gain gradually increased with time by 10%; whereas this surface charging was eliminated with the cylindrical GEM. Effective gains above 1000 were easily observed over a wide range of collection field strengths in a gas mixture of Ar/CO 2 (70/30). The transparency and electron collection efficiency were found to depend on the ratio of external field and the applied GEM voltage; the mutual influence of both drift and collection fields was found to be trivial

  9. Method for linking a media work to perform an action, involves linking an electronic media work with a reference electronic media work identifier associated with a reference electronic media work using an approximate neighbor search

    DEFF Research Database (Denmark)

    2016-01-01

    A computer-implemented method including the steps of: receiving, by a computer system including at least one computer, a media work uploaded from a first electronic device; receiving, by the computer system from a second electronic device, a tag associated with the media work having a media work...... identifier; storing, by the computer system, the media work identifier and the associated tag; obtaining, by the computer system from a third electronic device, a query related to the associated tag; correlating, by the computer system, the query with associated information related to an action...... to be performed; and providing, from the computer system to the third electronic device, the associated information to be used in performing the action....

  10. A Novel Electronic Device for Measuring Urine Flow Rate: A Clinical Investigation

    OpenAIRE

    Aliza Goldman; Hagar Azran; Tal Stern; Mor Grinstein; Dafna Wilner

    2017-01-01

    Objective: Currently, most vital signs in the intensive care unit (ICU) are electronically monitored. However, clinical practice for urine output (UO) measurement, an important vital sign, usually requires manual recording of data that is subject to human errors. In this study, we assessed the ability of a novel electronic UO monitoring device to measure real-time hourly UO versus current clinical practice. Design: Patients were connected to the RenalSense Clarity RMS Sensor Kit with a sensor...

  11. Vertical GaN Devices for Power Electronics in Extreme Environments

    Science.gov (United States)

    2016-03-31

    Vertical GaN Devices for Power Electronics in Extreme Environments Isik C. Kizilyalli (1), Robert J. Kaplar (2), O. Aktas (1), A. M. Armstrong (2...electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...discussed. Homoepitaxial MOCVD growth of GaN on its native substrate and being able to control doping has allowed the realization of vertical

  12. Spectromicroscopic Insights into the Morphology and Interfaces of Operational Organic Electronic Devices

    OpenAIRE

    Du, Xiaoyan

    2017-01-01

    Organic electronics, e.g., organic field-effect transistors (OFETs), organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), have attracted strong interest in both academia and industry during the last decades due to their unique capabilities offered by organic semiconductors. The micro-/nano-structures in active layers and the interface engineering in organic electronics are extremely important for desired device functionalities. In this thesis, the structure-function relations...

  13. The use of an electronic portal imaging device for exit dosimetry and quality control measurements

    International Nuclear Information System (INIS)

    Kirby, Michael C.; Williams, Peter C.

    1995-01-01

    Purpose: To determine ways in which electronic portal imaging devices (EPIDs) could be used to (a) measure exit doses for external beam radiotherapy and (b) perform quality control checks on linear accelerators. Methods and Materials: When imaging, our fluoroscopic EPID adjusts the gain, offset, and frame acquisition time of the charge coupled device (CCD) camera automatically, to allow for the range of photon transmissions through the patient, and to optimize the signal-to-noise ratio. However, our EPID can be programmed to act as an integrating dosemeter. EPID dosemeter measurements were made for 20 MV photons, for different field sizes and thicknesses of unit density phantom material placed at varying exit surface to detector distances. These were compared with simultaneous Silicon diode exit dose measurements. Our exit dosimetry technique was verified using an anthropomorphic type phantom, and some initial measurements have been made for patients treated with irregularly shaped 20 MV x-ray fields. In this dosimetry mode, our EPID was also used to measure certain quality control parameters, x-ray field flatness, and the verification of segmented intensity modulated field prescriptions. Results: Configured for dosimetry, our EPID exhibited a highly linear response, capable of resolving individual monitor units. Exit doses could be measured to within about 3% of that measured using Silicon diodes. Field flatness was determined to within 1.5% of Farmer dosemeter measurements. Segmented intensity modulated fields can be easily verified. Conclusions: Our EPID has the versatility to assess a range of parameters pertinent to the delivery of high quality, high precision radiotherapy. When configured appropriately, it can measure exit doses in vivo, with reasonable accuracy, perform certain quick quality control checks, and analyze segmented intensity modulated treatment fields

  14. Spatial distribution of electrons on a superfluid helium charge-coupled device

    International Nuclear Information System (INIS)

    Takita, Maika; Bradbury, F R; Lyon, S A; Gurrieri, T M; Wilkel, K J; Eng, Kevin; Carroll, M S

    2012-01-01

    Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately one electron per channel, no detectable transfer errors occur while clocking 10 9 pixels. One channel with its associated gates is perpendicular to the other 120, providing a CCD which can transfer electrons between the others. This perpendicular channel has not only shown efficient electron transport but also serves as a way to measure the uniformity of the electron occupancy in the 120 parallel channels.

  15. Device Characterization of High Performance Quantum Dot Comb Laser

    KAUST Repository

    Rafi, Kazi

    2012-02-01

    The cost effective comb based laser sources are considered to be one of the prominent emitters used in optical communication (OC) and photonic integrated circuits (PIC). With the rising demand for delivering triple-play services (voice, data and video) in FTTH and FTTP-based WDM-PON networks, metropolitan area network (MAN), and short-reach rack-to-rack optical computer communications, a versatile and cost effective WDM transmitter design is required, where several DFB lasers can be replaced by a cost effective broadband comb laser to support on-chip optical signaling. Therefore, high performance quantum dot (Q.Dot) comb lasers need to satisfy several challenges before real system implementations. These challenges include a high uniform broadband gain spectrum from the active layer, small relative intensity noise with lower bit error rate (BER) and better temperature stability. Thus, such short wavelength comb lasers offering higher bandwidth can be a feasible solution to address these challenges. However, they still require thorough characterization before implementation. In this project, we briefly characterized the novel quantum dot comb laser using duty cycle based electrical injection and temperature variations where we have observed the presence of reduced thermal conductivity in the active layer. This phenomenon is responsible for the degradation of device performance. Hence, different performance trends, such as broadband emission and spectrum stability were studied with pulse and continuous electrical pumping. The tested comb laser is found to be an attractive solution for several applications but requires further experiments in order to be considered for photonic intergraded circuits and to support next generation computer-communications.

  16. A review on remote monitoring technology applied to implantable electronic cardiovascular devices.

    Science.gov (United States)

    Costa, Paulo Dias; Rodrigues, Pedro Pereira; Reis, António Hipólito; Costa-Pereira, Altamiro

    2010-12-01

    Implantable electronic cardiovascular devices (IECD) include a broad spectrum of devices that have the ability to maintain rhythm, provide cardiac resynchronization therapy, and/or prevent sudden cardiac death. The incidence of bradyarrhythmias and other cardiac problems led to a broader use of IECD, which turned traditional follow-up into an extremely heavy burden for healthcare systems to support. Our aim was to assess the impact of remote monitoring on the follow-up of patients with IECD. We performed a review through PubMed using a specific query. The paper selection process included a three-step approach in which title, abstract, and cross-references were analyzed. Studies were then selected using previously defined inclusion criteria and analyzed according to the country of origin of the study, year, and journal of publication; type of study; and main issues covered. Twenty articles were included in this review. Eighty percent of the selected papers addressed clinical issues, from which 94% referred clinical events identification, clinical stability, time savings, or physician satisfaction as advantages, whereas 38% referred disadvantages that included both legal and technical issues. Forty-five percent of the papers referred patient issues, from which 89% presented advantages, focusing on patient acceptance/satisfaction, and patient time-savings. The main downsides were technical issues but patient privacy was also addressed. All the papers dealing with economic issues (20%) referred both advantages and disadvantages equally. Remote monitoring is presently a safe technology, widely accepted by patients and physicians, for its convenience, reassurance, and diagnostic potential. This review summarizes the principles of remote IECD monitoring presenting the current state-of-the-art. Patient safety and device interaction, applicability of current technology, and limitations of remote IECD monitoring are also addressed. The use of remote monitor should consider

  17. Low-Cost and Green Fabrication of Polymer Electronic Devices by Push-Coating of the Polymer Active Layers.

    Science.gov (United States)

    Vohra, Varun; Mróz, Wojciech; Inaba, Shusei; Porzio, William; Giovanella, Umberto; Galeotti, Francesco

    2017-08-02

    Because of both its easy processability and compatibility with roll-to-roll processes, polymer electronics is considered to be the most promising technology for the future generation of low-cost electronic devices such as light-emitting diodes and solar cells. However, the state-of-the-art deposition technique for polymer electronics (spin-coating) generates a high volume of chlorinated solution wastes during the active layer fabrication. Here, we demonstrate that devices with similar or higher performances can be manufactured using the push-coating technique in which a poly(dimethylsiloxane) (PDMS) layer is simply laid over a very small amount of solution (less than 1μL/covered cm 2 ), which is then left for drying. Using mm thick PDMS provides a means to control the solvent diffusion kinetics (sorption/retention) and removes the necessity for additional applied pressure to generate the desired active layer thickness. Unlike spin-coating, push-coating is a slow drying process that induces a higher degree of crystallinity in the polymer thin film without the necessity for a post-annealing step. The polymer light-emitting diodes and solar cells prepared by push-coating exhibit slightly higher performances with respect to the reference spin-coated devices, whereas at the same time reduce the amounts of active layer materials and chlorinated solvents by 50 and 20 times, respectively. These increased performances can be correlated to the higher polymer crystallinities obtained without applying a post-annealing treatment. As push-coating is a roll-to-roll compatible method, the results presented here open the path to low-cost and eco-friendly fabrication of a wide range of emerging devices based on conjugated polymer materials.

  18. Effects of tritium on electron multiplier performance

    International Nuclear Information System (INIS)

    Kerst, R.A.; Malinowski, M.E.

    1980-01-01

    In developing diagnostic instruments for fusion reactors, it is necessary to measure the effects of tritium contamination on channel electron multipliers (CEM). A CEM was exposed to T 2 pressures of up to 1.5 x 10 -1 Pa, with exposure quantities ranging up to 8800 Pa-s. The counting rate of the CEM is shown to consist of a prompt (Type I) signal caused by gas-phase tritium and a residual (Type II) signal, probably caused by near-surface tritium. The potential for using CEMs for observing the dynamics of tritium adsorption and absorption is discussed

  19. 78 FR 18988 - Establishing the Performance Characteristics of In Vitro Diagnostic Devices for the Detection of...

    Science.gov (United States)

    2013-03-28

    ... either electronic or written comments on this guidance at any time. General comments on Agency guidance... INFORMATION section for information on electronic access to the guidance. Submit electronic comments on the... diagnostic devices for the detection of antibodies to B. burgdorferi in human serum, plasma, and blood. These...

  20. The use and risk of portable electronic devices while cycling among different age groups.

    NARCIS (Netherlands)

    Goldenbeld, C. Houtenbos, M. Ehlers, E. & Waard, D. de

    2012-01-01

    In The Netherlands, a survey was set up to monitor the extent of the use of portable, electronic devices while cycling amongst different age groups of cyclists and to estimate the possible consequences for safety. The main research questions concerned age differences in the self-reported use of

  1. The use and risk of portable electronic devices while cycling among different age groups

    NARCIS (Netherlands)

    Goldenbeld, C.; Houtenbos, M.; Ehlers, E.; De Waard, D.

    Introduction: In the Netherlands, a survey was set up to monitor the extent of the use of portable, electronic devices while cycling amongst different age groups of cyclists and to estimate the possible consequences for safety. Method: The main research questions concerned age differences in the

  2. 78 FR 63492 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Science.gov (United States)

    2013-10-24

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-847] Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is...

  3. 77 FR 34063 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Science.gov (United States)

    2012-06-08

    ... Phones and Tablet Computers, and Components Thereof Institution of Investigation AGENCY: U.S... the United States after importation of certain electronic devices, including mobile phones and tablet... mobile phones and tablet computers, and components thereof that infringe one or more of claims 1-3 and 5...

  4. Near field resonant inductive coupling to power electronic devices dispersed in water

    NARCIS (Netherlands)

    Kuipers, J.; Bruning, H.; Bakker, S.; Rijnaarts, H.H.M.

    2012-01-01

    The purpose of this research was to investigate inductive coupling as a way to wirelessly power electronic devices dispersed in water. The most important parameters determining this efficiency are: (1) the coupling between transmitting and receiving coils, (2) the quality factors of the transmitting

  5. Radiation effects and hardness of semiconductor electronic devices for nuclear industry

    International Nuclear Information System (INIS)

    Payat, R.; Friant, A.

    1988-01-01

    After a brief review of industrial and nuclear specificity and radiation effects in electronics components (semiconductors) the need for a specific test methodology of semiconductor devices is emphasized. Some studies appropriate for nuclear industry at D. LETI/DEIN/CEN-SACLAY are related [fr

  6. 76 FR 50253 - Certain Portable Electronic Devices and Related Software; Notice of Institution of Investigation...

    Science.gov (United States)

    2011-08-12

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-797] Certain Portable Electronic Devices and....C. 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on July 8, 2011, under section...

  7. 78 FR 32689 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-05-31

    ... INTERNATIONAL TRADE COMMISSION [Docket No 2958] Certain Portable Electronic Communications Devices... Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled...

  8. 78 FR 22899 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Science.gov (United States)

    2013-04-17

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-878] Certain Electronic Devices Having... pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on March 12, 2013...

  9. 78 FR 116 - Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of...

    Science.gov (United States)

    2013-01-02

    ... INTERNATIONAL TRADE COMMISSION [DN 2927] Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has...

  10. 78 FR 6834 - Certain Cases for Portable Electronic Devices; Institution of Investigation

    Science.gov (United States)

    2013-01-31

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-867] Certain Cases for Portable Electronic Devices; Institution of Investigation AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on...

  11. 76 FR 60870 - In the Matter of Certain Electronic Devices With Communication Capabilities, Components Thereof...

    Science.gov (United States)

    2011-09-30

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-808] In the Matter of Certain Electronic Devices... Investigation; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade.... International Trade Commission on August 16, 2011, under section 337 of the Tariff Act of 1930, as amended, 19 U...

  12. 77 FR 68828 - Certain Cases for Portable Electronic Devices; Institution of Investigation Pursuant to the...

    Science.gov (United States)

    2012-11-16

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-861] Certain Cases for Portable Electronic Devices; Institution of Investigation Pursuant to the Tariff Act of 1930, as Amended AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with...

  13. 76 FR 70490 - Certain Electronic Devices With Graphics Data Processing Systems, Components Thereof, and...

    Science.gov (United States)

    2011-11-14

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-813] Certain Electronic Devices With... AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on September 22, 2011, under section 337 of...

  14. 76 FR 47610 - Certain Electronic Digital Media Devices and Components Thereof; Notice of Institution of...

    Science.gov (United States)

    2011-08-05

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-796] Certain Electronic Digital Media Devices and.... 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on July 5, 2011, under section...

  15. 75 FR 38118 - In the Matter of Certain Electronic Devices With Image Processing Systems, Components Thereof...

    Science.gov (United States)

    2010-07-01

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-724] In the Matter of Certain Electronic Devices... AGENCY: U.S. International Trade Commission. ACTION: Institution of investigation pursuant to 19 U.S.C. 1337. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade...

  16. 77 FR 11588 - Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof

    Science.gov (United States)

    2012-02-27

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-831] Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof AGENCY: U.S. International Trade Commission... Trade Commission on January 10, 2012, under section 337 of the Tariff Act of 1930, as amended, 19 U.S.C...

  17. 75 FR 39971 - In the Matter of Certain Electronic Imaging Devices; Notice of Investigation

    Science.gov (United States)

    2010-07-13

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-726] In the Matter of Certain Electronic Imaging Devices; Notice of Investigation AGENCY: U.S. International Trade Commission. ACTION: Institution of....S. International Trade Commission on May 13, 2010, under section 337 of the Tariff Act of 1930, as...

  18. 77 FR 20847 - Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to...

    Science.gov (United States)

    2012-04-06

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade.... International Trade Commission on February 7, 2012, and an amended complaint was filed with the U.S...

  19. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Science.gov (United States)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2016-05-03

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  20. Nanocellulose-enabled electronics, energy harvesting devices, smart materials and sensors: a review

    Science.gov (United States)

    Ronald Sabo; Aleksey Yermakov; Chiu Tai Law; Rani Elhajjar

    2016-01-01

    Cellulose nanomaterials have a number of interesting and unique properties that make them well-suited for use in electronics applications such as energy harvesting devices, actuators and sensors. Cellulose nanofibrils and nanocrystals have good mechanical properties, high transparency, and low coefficient of thermal expansion, among other properties that facilitate...

  1. A benchmark study of commercially available copper nanoparticle inks for application in organic electronic devices

    NARCIS (Netherlands)

    Polino, G.; Abbel, R.; Shanmugam, S.; Bex, G.J.P.; Hendriks, R.; Brunetti, F.; Di Carlo, A.; Andriessen, R.; Galagan, Y.

    2016-01-01

    A set of three commercial copper nanoparticle based inkjet inks has been benchmarked with respect to their potential to form conducting printed structures for future applications in organic electronic devices. Significant differences were observed in terms of jetting properties, spreading behaviour

  2. 75 FR 3154 - Children's Products Containing Lead; Exemptions for Certain Electronic Devices

    Science.gov (United States)

    2010-01-20

    ... that use solar power or other power sources), such as music players, headphones, some toys and games... basis that replacing or installing parts of a children's electronic device is not a children's activity... are not installed. We decline to revise the rule as suggested by some commenters. We have determined...

  3. 76 FR 24051 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

    Science.gov (United States)

    2011-04-29

    ..., Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components Thereof... certain electronic devices, including mobile phones, mobile tablets, portable music players, and computers...''). The complaint further alleges that an industry in the United States exists or is in the process of...

  4. Effect of interface of electronics devices constructed with different materials to X-ray

    International Nuclear Information System (INIS)

    Mu Weibing; Chen Panxun

    2003-01-01

    The behavior of X-ray nearby interface which is constructed with different materials is introduced in this paper. And the affect to electronics devices of this behavior is analyzed, the affect factors of four interfaces are calculated by Monte-Carlo method

  5. Five Ways to Hack and Cheat with Bring-Your-Own-Device Electronic Examinations

    Science.gov (United States)

    Dawson, Phillip

    2016-01-01

    Bring-your-own-device electronic examinations (BYOD e-exams) are a relatively new type of assessment where students sit an in-person exam under invigilated conditions with their own laptop. Special software restricts student access to prohibited computer functions and files, and provides access to any resources or software the examiner approves.…

  6. Cardiac implantable electronic device and associated risk of infective endocarditis in patients undergoing aortic valve replacement

    DEFF Research Database (Denmark)

    Østergaard, Lauge; Valeur, Nana; Bundgaard, Henning

    2017-01-01

    Aims: Patients undergoing aortic valve replacement (AVR) are at increased risk of infective endocarditis (IE) as are patients with a cardiac implantable electronic device (CIED). However, few data exist on the IE risk after AVR surgery in patients with a CIED. Methods and results: Using the Danish...

  7. 77 FR 11157 - Certain Portable Electronic Devices and Related Software; Final Determination Finding No...

    Science.gov (United States)

    2012-02-24

    ... investigation). The complaint named Apple Inc. as the Respondent. On October 17, 2011, the ALJ issued his final... Commission has subject matter jurisdiction and that Apple did not contest that the Commission has in rem and... electronic devices and related software. Regarding infringement, the ALJ found that Apple does not infringe...

  8. Complex composition film condensation in the sluice device of an electron microscope

    International Nuclear Information System (INIS)

    Kukuev, V.I.; Lesovoj, M.V.; Vlasov, D.A.; Malygin, M.V.; Domashevskaya, Eh.P.; Tomashpol'skij, Yu.Ya.

    1994-01-01

    Based on the sluice device of an electron microscope a system is developed for material laser evaporation and vapor condensation on a substrate, situated in the microscope specimen holder. Substrate heating by laser radiation to 100 deg C is used. The system is applied for investigating growth of high-temperature superconductor films

  9. 75 FR 4583 - In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players...

    Science.gov (United States)

    2010-01-28

    ..., Including Mobile Phones, Portable Music Players, and Computers; Notice of Investigation AGENCY: U.S... music players, and computers, by reason of infringement of certain claims of U.S. Patent Nos. 6,714,091... importation of certain electronic devices, including mobile phones, portable music players, or computers that...

  10. Electronic device, system on chip and method for monitoring a data flow

    NARCIS (Netherlands)

    2012-01-01

    An electronic device is provided which comprises a plurality of processing units (IP1-IP6), a network-based inter-connect (N) coupled to the processing units (IP1-IP6) and at least one monitoring unit (P1, P2) for monitoring a data flow of at least one first communication path between the processing

  11. Neuromimetic Circuits with Synaptic Devices Based on Strongly Correlated Electron Systems

    Science.gov (United States)

    Ha, Sieu D.; Shi, Jian; Meroz, Yasmine; Mahadevan, L.; Ramanathan, Shriram

    2014-12-01

    Strongly correlated electron systems such as the rare-earth nickelates (R NiO3 , R denotes a rare-earth element) can exhibit synapselike continuous long-term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field-driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and nonassociative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogs may provide insight into biological processes such as decision making, learning, and adaptation, while facilitating advanced parallel information processing in hardware.

  12. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Energy Technology Data Exchange (ETDEWEB)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2017-04-04

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  13. Bi-directional magnetic resonance based wireless power transfer for electronic devices

    International Nuclear Information System (INIS)

    Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan; Mishra, Debasish

    2015-01-01

    In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84% in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency

  14. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

    Directory of Open Access Journals (Sweden)

    Adrian Iovan

    2012-12-01

    Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  15. Bi-directional magnetic resonance based wireless power transfer for electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan; Mishra, Debasish [Department of Electronics and Instrumentation Engineering, Institute of Technical Education and Research, Siksha ‘O’ Anushandhan University, Bhubaneswar 751030 (India)

    2015-09-28

    In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84% in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency.

  16. Photovoltaic Device Performance Evaluation Using an Open-Hardware System and Standard Calibrated Laboratory Instruments

    Directory of Open Access Journals (Sweden)

    Jesús Montes-Romero

    2017-11-01

    Full Text Available This article describes a complete characterization system for photovoltaic devices designed to acquire the current-voltage curve and to process the obtained data. The proposed system can be replicated for educational or research purposes without having wide knowledge about electronic engineering. Using standard calibrated instrumentation, commonly available in any laboratory, the accuracy of measurements is ensured. A capacitive load is used to bias the device due to its versatility and simplicity. The system includes a common part and an interchangeable part that must be designed depending on the electrical characteristics of each PV device. Control software, developed in LabVIEW, controls the equipment, performs automatic campaigns of measurements, and performs additional calculations in real time. These include different procedures to extrapolate the measurements to standard test conditions and methods to obtain the intrinsic parameters of the single diode model. A deep analysis of the uncertainty of measurement is also provided. Finally, the proposed system is validated by comparing the results obtained from some commercial photovoltaic modules to the measurements given by an independently accredited laboratory.

  17. 40 CFR 1700.14 - Marine Pollution Control Device (MPCD) Performance Standards. [Reserved

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 32 2010-07-01 2010-07-01 false Marine Pollution Control Device (MPCD... UNIFORM NATIONAL DISCHARGE STANDARDS FOR VESSELS OF THE ARMED FORCES Marine Pollution Control Device (MPCD) Performance Standards § 1700.14 Marine Pollution Control Device (MPCD) Performance Standards. [Reserved] ...

  18. Progress of alternative sintering approaches of inkjet-printed metal inks and their application for manufacturing of flexible electronic devices

    NARCIS (Netherlands)

    Wünscher, S.; Abbel, R.; Perelaer, J.; Schubert, U.S.

    2014-01-01

    Well-defined high resolution structures with excellent electrical conductivities are key components of almost every electronic device. Producing these by printing metal based conductive inks on polymer foils represents an important step forward towards the manufacturing of plastic electronic

  19. Effect of high-energy electron beam irradiation on the device characteristics of IGZO-based transparent thin film transistors

    International Nuclear Information System (INIS)

    Moon, Hye Ji; Oh, Hye Ran; Bae, Byung Seong; Yun, Eui Jung; Ryu, Min Ki; Cho, Kyoung Ik

    2012-01-01

    In this study, we investigated the effects of high-energy electron beam irradiation (HEEBI) on the device properties of indium-gallium-zinc-oxide (IGZO)-based transparent thin film transistors (TTFTs). The developed TTFTs had a top gate structure, which used IGZO and Al 2 O 3 films for the active layer and the gate dielectric, respectively. The developed TTFTs were treated with HEEBI in air at RT at an electron beam energy of 0.8 MeV and a dose of 1 x 10 14 electrons/cm 2 . Without the HEEBI treatment, the devices operated in depletion mode with a threshold voltage (V th ) of -11.25 V, a field-effect mobility (μ FE ) of 8.71 cm 2 /Vs, an on-off ratio (I on/off ) of 1.3 x 10 8 and a sub-threshold slope (SS) of 0.3 V/decade. A huge positive-shifted V th of -1 V, a very high μ FE of 420 cm 2 /Vs, a high I on/off of 6.1 x 10 8 , and a lower SS of 0.25 V/decade were achieved for the HEEBI-treated devices, suggesting that the device characteristics of the developed TTFTs were significantly improved by the HEEBI treatment. The best device characteristics, which include I on/off of 8.1 x 10 8 , SS of 0.25 V/decade, V th of +1 V, μ FE of 8.8 cm 2 /Vs, and operation in the enhancement mode without aging, were obtained for the samples that had been annealed after HEEBI treatment. On the basis of the experimental results, we believe that HEEBI treatment can be crucial to develop IGZO-based TFTs with high performance and long-term reliability.

  20. Performance of the Antares large area cold cathode electron gun

    International Nuclear Information System (INIS)

    Rosocha, L.A.; Mansfield, C.R.

    1983-01-01

    The performance of the electron gun which supplies ionization for the Antares high-power electron-beam-sustained CO 2 -laser power amplifier is described. This electron gun is a coaxial cylindrical cold cathode vacuum triode having a total electron aperture area of approximately 9 m 2 . Electrons are extracted from the gun in pulses of 3 to 6 μs duration, average current densities of 40 to 60 mA/cm 2 , and electron energies of 450 to 500 keV. The main areas of discussion in this paper are the performance in terms of grid control, current-density balance, and current runaway due to breakdown limitations. Comparison of the experimental results with the predictions of a theoretical model for the electron gun are also presented