WorldWideScience

Sample records for pb latio3 thin

  1. Effect of Sr doping on LaTiO3 thin films

    International Nuclear Information System (INIS)

    Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

    2005-01-01

    We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

  2. Near Infrared Lateral Photovoltaic Effect in LaTiO3 Films

    Directory of Open Access Journals (Sweden)

    Wujun Jin

    2013-01-01

    Full Text Available We have reported on the lateral photovoltaic effect of LaTiO3 films epitaxially grown on (100 SrTiO3 substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3 film through SrTiO3 substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3 films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.

  3. Synthesis and characterization of a-site doped LaTiO3 nano perovskites

    International Nuclear Information System (INIS)

    Bradha, M.; Ashok, Anuradha

    2013-01-01

    Nano-sized lanthanum titanate perovskites (La (1-x) A x TiO 3 ) (A= Ba, Sr, Ca) were prepared by sol-gel method and calcined at 800℃. The synthesised perovskites were characterized by Thermogravimetry/ Differential thermal analysis (TGA/DTA), X-ray diffraction (XRD) and High Resolution Transmission Electron Microscopy (HRTEM) etc. LaTiO 3 is a perovskite having prominent interest for a variety of applications such as dielectric, insulators, charge-transport properties etc. It is a defect perovskite, with transport properties varying from insulating to metallic based on oxygen stoichiometry. In a quest to observe the effect of the nano size on its properties, lanthanum titanate (LaTiO 3 ) nano perovskites with different dopants on the A-site were prepared by using sol-gel method. In the present work we discuss the synthesis and structural analysis of (La 0.8 A 0.2 TiO 3 ). Phase purity and structural analysis of the calcined samples were performed by powder X-ray diffraction (XRD, with CuKα radiation). In addition to this, morphology and crystal structure was examined by Transmission Electron Microscopy (TEM) using a JEOL JEM 2100 HRTEM. HRTEM studies indicate that the nano perovskites are of size around 20 nm. Ring pattern in SAED also confirms that the perovskite is polycrystalline/nanocrystalline. More detailed study on high resolution images and crystal structure shed light on the reason for the properties exhibited by this perovskites

  4. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  5. The role of magnetoelastic strain on orbital control and transport properties in an LaTiO(3)-CoFe(2)O(4) heterostructure.

    Science.gov (United States)

    Li, J; Chu, H F; Zhang, Y; Wang, J; Zheng, D N; Song, Q; Wang, P; Ma, Y G; Ong, C K; Wang, S J

    2009-07-08

    Epitaxial heterostructures of CoFe(2)O(4)/LaTiO(3)/LaAlO(3) have been successfully prepared by using the pulsed laser deposition technique. The magnetoresistance (MR) of the samples is negative and linear with field at H≥2 T, exhibiting no dependence on field directions. Nevertheless, when Hstrains on the bottom LaTiO(3) layer. Apparently the orbital status and the one-electron bandwidth in the LaTiO(3) layer are altered, which leads to a change in resistance.

  6. Synthesis, structure and total conductivity of A-site doped LaTiO3−δ perovskites

    International Nuclear Information System (INIS)

    Bradha, M.; Hussain, S.; Chakravarty, Sujay; Amarendra, G.; Ashok, Anuradha

    2015-01-01

    Highlights: • A-site divalent alkaline earth metal doped LaTiO 3−δ perovskites were synthesised by sol–gel method. • Structural studies revealed no change in crystal symmetry but change in cell dimensions after doping. • After doping divalent cations in A-site, an enhancement in total conductivity was observed in LaTiO 3−δ . • Temperature dependent electrical property was observed in all synthesised perovskites. - Abstract: Oxygen deficient perovskites LaTiO 3−δ and La 0.8 A 0.2 TiO 3−δ (A = Ba, Sr, Ca) were synthesized by sol–gel method. The effect of divalent dopants on microstructure is investigated in detail using X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The oxidation states of La 3+ and Ti 3+ ions have been deduced using X-ray Photoelectron Spectroscopy (XPS). Impedance spectroscopy was used to analyze the total conductivity, an increase in conductivity was observed after doping in the A-site with divalent cations Ba, Ca and Sr. Among the investigated perovskites La 0.8 Ca 0.2 TiO 3−δ exhibited the maximum conductivity of 1.22 × 10 −2 S/cm in air atmosphere at 650 °C

  7. Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3

    Science.gov (United States)

    Wen, Fangdi; Cao, Yanwei; Liu, Xiaoran; Pal, B.; Middey, S.; Kareev, M.; Chakhalian, J.

    2018-03-01

    Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces present an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin of ferromagnetism in LaAlO3/SrTiO3 heterojunctions is still an open question. Here, by using a prototypical two-dimensional electron gas (2DEG) which emerges at the interface between band insulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3, the experiment reveals the evidence for magnetic phase separation in a hole-doped Ti d1 t2g system, resulting in spin-polarized 2DEG. The details of electronic and magnetic properties of the 2DEG were investigated by temperature-dependent d.c. transport, angle-dependent X-ray photoemission spectroscopy, and temperature-dependent magnetoresistance. The observation of clear hysteresis in magnetotransport at low magnetic fields implies spin-polarization from magnetic islands in the hole rich LaTiO3 near the interface. These findings emphasize the role of magnetic instabilities in doped Mott insulators, thus providing another path for designing all-oxide structures relevant to spintronic applications.

  8. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  9. Structural characterization of chemically deposited PbS thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

    2007-01-01

    Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

  10. Resistivity behavior of optimized PbTiO3 thin films prepared by spin coating method

    Science.gov (United States)

    Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

    2018-05-01

    Th is study presents the resistivity behavior of PbTiO3 thin films which were prepared towards metal-insulator-metal capacitor device fabrication. The PbTiO3 thin films were prepared through sol-gel spin coating method that involved various deposition parameters that is (1) different molar concentration of PbTiO3 solutions, (2) various additional PbAc-content in PbTiO3 solutions, and (3) various annealing temperature on PbTiO3 thin films. Hence, an electrical measurement of current versus voltage was done to determine the resistivity behavior of PbTiO3 thin films.

  11. Optical properties of PbS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akhmedov, O. R., E-mail: orucahmedov@mail.ru; Guseinaliyev, M. G. [National Academy of Azerbaijan, Nakhichevan Branch (Azerbaijan); Abdullaev, N. A.; Abdullaev, N. M.; Babaev, S. S.; Kasumov, N. A. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

    2016-01-15

    The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E{sub 1} = 3.53 eV and E{sub 2} = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D (m = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity (αhν){sup 2} on the photon energy hν, the band gap is established at E{sub g} = 0.37 eV.

  12. One-step synthesis of PbSe-ZnSe composite thin film

    Directory of Open Access Journals (Sweden)

    Abe Seishi

    2011-01-01

    Full Text Available Abstract This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package.

  13. Intercalation crystallization of phase-pure α-HC(NH₂)₂PbI₃ upon microstructurally engineered PbI₂ thin films for planar perovskite solar cells.

    Science.gov (United States)

    Zhou, Yuanyuan; Yang, Mengjin; Kwun, Joonsuh; Game, Onkar S; Zhao, Yixin; Pang, Shuping; Padture, Nitin P; Zhu, Kai

    2016-03-28

    The microstructure of the solid-PbI2 precursor thin film plays an important role in the intercalation crystallization of the formamidinium lead triiodide perovskite (α-HC(NH2)2PbI3). It is shown that microstructurally engineered PbI2 thin films with porosity and low crystallinity are the most favorable for conversion into uniform-coverage, phase-pure α-HC(NH2)2PbI3 perovskite thin films. Planar perovskite solar cells fabricated using these thin films deliver power conversion efficiency (PCE) up to 13.8%.

  14. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

    Science.gov (United States)

    Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

    2018-05-01

    We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

  15. TEM and TED investigation of Ag/PbTe thin film bilayers.

    Science.gov (United States)

    Mandrino, Đorđe; Marinković, V.

    Morphology and phase structure of Ag/PbTe thin film bilayers were investigated. This system was of particular interest because of interfacial reaction observed previously in an analogous Ag/SnTe system. Reaction products due to the interdiffusion of Ag with the substrate were determined as well as their orientations. They were discussed in view of the reaction products' structural relations to the PbTe.

  16. The effects of inorganic surface treatments on photogenerated carrier mobility and lifetime in PbSe quantum dot thin films

    Energy Technology Data Exchange (ETDEWEB)

    Goodwin, E.D.; Straus, Daniel B. [Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104 (United States); Gaulding, E. Ashley [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Murray, Christopher B. [Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104 (United States); Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Kagan, Cherie R., E-mail: kagan@seas.upenn.edu [Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104 (United States); Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States)

    2016-06-01

    Highlights: • Na{sub 2}Se and PbCl{sub 2} treatments modified the surface chemistry of PbSe quantum dots. • Excess Se (Pb) p-doped (n-doped) PbSe quantum dot thin films. • Carrier mobility and lifetime were studied using time-resolved microwave conductivity. • Mobility increased as the Fermi level approached the band edges. - Abstract: We used flash-photolysis, time-resolved microwave conductivity (TRMC) to probe the carrier mobility and lifetime in PbSe quantum dot (QD) thin films treated with solutions of the metal salts of Na{sub 2}Se and PbCl{sub 2}. The metal salt treatments tuned the Pb:Se stoichiometry and swept the Fermi energy throughout the QD thin film bandgap. A stoichiometric imbalance favoring excess Se heavily p-doped the QD thin film, shifted the Fermi energy toward the valence band, and yielded the highest TRMC mobility and lifetime. Introducing Pb first compensated the p-doping and shifted the Fermi level through mid-gap, decreasing the TRMC mobility. Further Pb addition created an excess of Pb, n-doped the QD thin film, moved the Fermi level to near the conduction band, and again increased the TRMC mobility. The increase in TRMC mobility as the Fermi energy was shifted toward the band edges by non-stoichiometry is consistent with the QD thin film density of states.

  17. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    International Nuclear Information System (INIS)

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  18. Study of structural and optical properties of PbS thin films

    Science.gov (United States)

    Homraruen, T.; Sudswasd, Y.; Sorod, R.; Kayunkid, N.; Yindeesuk, W.

    2018-03-01

    This research aimed to synthesize lead sulfide (PbS) thin films on glass slides using the successive ion layer absorption and reaction (SILAR) method. We studied the optical properties and structure of PbS thin films by changing the number of dipping cycles and the concentration of precursor solution. The results of this experiment show that different conditions have a considerable influence on the thickness and absorbance of the films. When the number of dipping cycles and the concentration of the solution are increased, film thickness and absorbance tend to become higher. The xrays diffraction pattern showed all the diffraction peaks which confirmed the face center cubic and the structure of PbS had identified. Grain size computation was used to confirm how much these conditions could be affected.

  19. Self-positioned thin Pb-alloy base electrode Josephson junction

    International Nuclear Information System (INIS)

    Kuroda, K.; Sato, K.

    1986-01-01

    A self-positioned thin (SPOT) Pb-alloy base electrode Josephson junction is developed. In this junction, a 50-nm thick Pb-alloy base electrode is restricted within the junction region on an Nb underlayer using a self-alignment technique. The grain size reduction and the base electrode area restriction greatly improve thermal cycling stability, where the thermal cycling tests of 4000 proposed junctions (5 x 5 μm 2 ) showed no failures after 4000 cycles. In addition, the elimination of insulator layer stress on the Pb-alloy base electrode rectifies the problem of size effect on current density. The Nb underlayers also serve to isolate the Pb-alloy base electrodes from the resistors

  20. Structural, optical and electrical characterization of Ag doped lead chalcogenide (PbSe) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, A.A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Al-Heniti, S. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrew' s College, Gorakhpur, UP (India)

    2013-03-15

    Research and development efforts are currently underway to fabricate a variety of solid state devices. A good deal of information regarding the synthesis, structural, optical and electrical properties of Ag doped lead chalcogenides have been revealed. The bulk polycrystalline (PbSe){sub 100-x}Ag{sub x} ternary chalcogenides are prepared by diffusion technique. The XRD patterns recorded for the (PbSe){sub 100-x}Ag{sub x} thin films prepared by vacuum deposition technique, show that these films are polycrystalline in nature. The optical measurements reveal that the (PbSe){sub 100-x}Ag{sub x} thin films possess direct band gap and the band gap energy decreases with an increase of Ag concentration. The extinction coefficient (k) and refractive index (n) are found to be changing by increasing Ag concentration in PbSe. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities of (PbSe){sub 100-x}Ag{sub x} thin films are measured in temperature range 303-403 K. It is observed that the dc conductivity increases at all the temperatures with an increase of Ag content in PbSe system. The experimental data suggests that the conduction is due to thermally assisted tunneling of the charge carriers in the localized states near the band edges. The activation energy and optical band gap are found to decrease with increasing Ag concentration in lead chalcogenide and there are good agreements between these two values. - Highlights: Black-Right-Pointing-Pointer (PbSe){sub 100-x}Ag{sub x} thin films has been investigated. Black-Right-Pointing-Pointer Polycrystalline nature has been verified by X-ray diffraction. Black-Right-Pointing-Pointer Optical absorption data showed the rules of direct transitions predominate. Black-Right-Pointing-Pointer Dc conductivity increases with an increase of Ag content in PbSe system. Black-Right-Pointing-Pointer Increase of Ag concentration causes a decrease in E{sub g

  1. Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

    Science.gov (United States)

    Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

    2018-03-01

    Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

  2. A microfluidic approach to water-rock interactions using thin rock sections: Pb and U sorption onto thin shale and granite sections

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Youn Soo [Institute of Mine Reclamation Technology, Mine Reclamation Corp., 2 Segye-ro, Wonju-si, Gangwon-do, 26464 (Korea, Republic of); Jo, Ho Young, E-mail: hyjo@korea.ac.kr [Department of Earth and Environmental Sciences, Korea University, Anam-dong, Seongbuk-gu, Seoul, 02841 (Korea, Republic of); Ryu, Ji-Hun; Kim, Geon-Young [Korea Atomic Energy Research Institute, 1045 Daedeokdaero, Yuseong-gu, Daejeon, 34057 (Korea, Republic of)

    2017-02-15

    Highlights: • Microfluidic tests was used to investigate water-rock (mineral) interactions. • Pb and U sorption onto thin shale and granite sections was evaluated. • Pb removal by thin shale section is related primarily to Fe-containing minerals. • A slightly larger amount of U was removed onto the thin granite section with Fe-containing minerals. - Abstract: The feasibility of using microfluidic tests to investigate water-rock (mineral) interactions in fractures regarding sorption onto thin rock sections (i.e., shale and granite) of lead (Pb) and uranium (U) was evaluated using a synthetic PbCl{sub 2} solution and uranium-containing natural groundwater as fluids. Effluent composition and element distribution on the thin rock sections before and after microfluidic testing were analyzed. Most Pb removal (9.8 mg/cm{sup 2}) occurred within 3.5 h (140 PVF), which was 74% of the total Pb removal (13.2 mg/cm{sup 2}) at the end of testing (14.5 h, 560 PVF). Element composition on the thin shale sections determined by μ-XRF analysis indicated that Pb removal was related primarily to Fe-containing minerals (e.g., pyrite). Two thin granite sections (biotite rich, Bt-R and biotite poor, Bt-P) exhibited no marked difference in uranium removal capacity, but a slightly higher amount of uranium was removed onto the thin Bt-R section (266 μg/cm{sup 2}) than the thin Bt-P section (240 μg/cm{sup 2}) within 120 h (4800 PVF). However, uranium could not be detected by micro X-ray fluorescence (μ-XRF) analysis, likely due to the detection limit. These results suggest that microfluidic testing on thin rock sections enables quantitative evaluation of rock (mineral)-water interactions at the micro-fracture or pore scale.

  3. Formation of Ag nanoparticles in percolative Ag–PbTiO3 composite thin films through lead-rich Ag–Pb alloy particles formed as transitional phase

    International Nuclear Information System (INIS)

    Hu, Tao; Wang, Zongrong; Su, Yanbo; Tang, Liwen; Shen, Ge; Song, Chenlu; Han, Gaorong; Weng, Wenjian; Ma, Ning; Du, Piyi

    2012-01-01

    The Ag nanoparticle dispersed percolative PbTiO 3 ceramic thin film was prepared in situ by sol–gel method with excess lead introduced into a sol precursor. The influence of excess lead and the heat treatment time on the formation of Ag nanoparticles was investigated by energy dispersive X-ray spectra, scanning electron microscopy, X-ray diffraction, and ultraviolet–visible absorption spectra. Results showed that the excess lead introduced into the sol precursor was in favor of the crystallization of the thin film and in favor of formation of the perovskite phase without the pyrochlore phase. Lead-rich Ag–Pb alloy particles first formed in the thin films and then decomposed to become large numbers of Ag nanoparticles of about 3 nm in size in the thin films when the heat treatment time was longer than 2 min. The content of the Ag nanoparticles increased with increasing the heat treatment time. The percolative behavior appears typically in the Ag nanoparticle dispersed thin films. The dielectric constant of the thin film was about 3 times of that without Ag nanoparticles. - Highlights: ► The Ag nanoparticles formed in the PbTiO 3 percolative ceramic thin film. ► The Ag–Pb alloy particles formed as transitional phase during thin film preparation. ► The lead-rich Ag–Pb alloy particles decomposed to form Ag nanoparticles in the film. ► Permittivity of the thin film is 3 times higher than that without Ag nanoparticles.

  4. XPS-and-DFT analyses of the Pb 4f — Zn 3s and Pb 5d — O 2s overlapped ambiguity contributions to the final electronic structure of bulk and thin-film Pb-modulated zincite

    Energy Technology Data Exchange (ETDEWEB)

    Zatsepin, D.A. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Boukhvalov, D.W., E-mail: danil@hanyang.ac.kr [Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Theoretical Physics and Applied Mathematics Department, Ural Federal University,Mira Street 19, 620002 Yekaterinburg (Russian Federation); Gavrilov, N.V. [Institute of Electrophysics, Russian Academy of Sciences, Ural Branch, 620990 Yekaterinburg (Russian Federation); Kurmaev, E.Z. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Zatsepin, A.F. [Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Cui, L. [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Shur, V. Ya.; Esin, A.A. [Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, 620000 Yekaterinburg (Russian Federation)

    2017-05-31

    Highlights: • Two modes of ZnO:Pb in the bulk and surface morphologies were established: the high- and low-interaction. • It was shown the ambiguity contribution of Pb 4f − Zn 3s and Pb 5d − O 2s states into final electronic structure. • The main type of defects is PbO-like with some PbO{sub 2}-like contributions. • An applied wurzite-like structural model well agrees with experimental data obtained for zincite. - Abstract: The electronic structures of zincite Pb-modulated bulk and thin-films were studied via X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) techniques. Both XPS data and DFT-calculations allowed the derivation of two different Pb-embedding scenarios into the ZnO-hosts. These included the high-interaction mode of Pb-impurity with initial zinc-oxygen host-lattice for the bulk morphology, accompanied with low Pb-metal losses; and the low-interaction mode for thin-films, where there was intake of Pb-impurities into the hollows of the surface. Despite dissimilar mechanisms of Pb-impurity accumulation and distribution in the bulk and thin-films zincite host-matrices, the strong Pb 4f — Zn 3s and Pb 5d — O 2s overlapped ambiguity contribution to the appropriate core-level structure and valence bands was established by XPS analysis and reproduced with the help of DFT-calculations. It was shown that the microscopic structure of the embedded lead-impurity played a crucial role in the Pb ion-beam stimulated synthesis of secondary lead-oxygen phases via large-area defect fabrication, and the difference among zincite and wurzite polymorphs played almost no role in this case.

  5. Oxygen tracer studies of ferroelectric fatigue in Pb(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Schloss, Lawrence F.; McIntyre, Paul C.; Hendrix, Bryan C.; Bilodeau, Steven M.; Roeder, Jeffrey F.; Gilbert, Stephen R.

    2002-01-01

    Long-range oxygen motion has been observed in Pt/Pb(Zr,Ti)O 3 /Ir thin-film structures after electrical fatigue cycling at room temperature. Through an exchange anneal, isotopic 18 O was incorporated as a tracer into bare Pb(Zr,Ti)O 3 (PZT) films, allowing secondary ion mass spectrometry measurements of the tracer profile evolution as a function of the number of polarization reversals. Observation of 18 O tracer redistribution during voltage cycling, which is presumably mediated by oxygen vacancy motion, was found to be strongly dependent upon the thermal history of the film. However, there was no strong correlation between the extent of 18 O tracer redistribution and the extent of polarization suppression induced by voltage cycling. Our results suggest that oxygen vacancy motion plays, at most, a secondary role in ferroelectric fatigue of PZT thin films

  6. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Pérez-García Claudia Elena

    2015-01-01

    Full Text Available To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition: SILAR (Successive Ionic Layer Adsorption and Reaction and PCBD (Photo Chemical Bath Deposition, all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap of PbS films can be monitored by deposition process due to porosity-induced quantum confinement which depends on the parameters of the process. We expect that the techniques employed can be successfully used for production of optoelectronic devices.

  7. Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

    Science.gov (United States)

    Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

    2018-03-01

    Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

  8. Dielectric properties of electron irradiated PbZrO 3 thin films

    Indian Academy of Sciences (India)

    The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

  9. Sulfide precursor concentration and lead source effect on PbS thin films properties

    International Nuclear Information System (INIS)

    Beddek, L.; Messaoudi, M.; Attaf, N.; Aida, M.S.; Bougdira, J.

    2016-01-01

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  10. Sulfide precursor concentration and lead source effect on PbS thin films properties

    Energy Technology Data Exchange (ETDEWEB)

    Beddek, L.; Messaoudi, M.; Attaf, N. [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Aida, M.S., E-mail: aida_salah2@yahoo.fr [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Bougdira, J. [Université de Lorraine, Institut Jean Lamour UMR 7198, Vandoeuvre 54506 (France)

    2016-05-05

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  11. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  12. Formation of nanodots and enhancement of thermoelectric power induced by ion irradiation in PbTe:Ag composite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bala, Manju, E-mail: manjubala474@gmail.com [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Meena, Ramcharan; Gupta, Srashti; Pannu, Compesh [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Tripathi, Tripurari S. [Aalto University, Värmemansgränden 2, 02150 Espoo (Finland); Varma, Shikha [Institute of Physics, Bhubaneshwar, Odisha 751005 (India); Tripathi, Surya K. [Department of Physics, Panjab University, Chandigarh 160 014 (India); Asokan, K., E-mail: asokaniuac@gmail.com [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Avasthi, Devesh K. [Amity University, Noida 201313, Uttar Pradesh (India)

    2016-07-15

    Present study demonstrates an enhancement in thermoelectric power of 10% Ag doped PbTe (PbTe:Ag) thin films when irradiated with 200 keV Ar ion. X-ray diffraction showed an increase in crystallinity for both PbTe and PbTe:10Ag nano-composite films after Ar ion irradiation due to annealing of defects in the grain boundaries. The preferential sputtering of Pb and Te ions in comparison to Ag ions resulted in the formation of nano-dots. This was further confirmed by X-ray photoelectron spectroscopy (XPS). Such an enhancement in thermoelectric power of irradiated PbTe:10Ag films in comparison to pristine PbTe:10Ag film is attributed to the decrease in charge carrier concentration that takes part in the transport process via restricting the tunneling of carriers through the wider potential barrier formed at the interface of nano-dots.

  13. Photosensitive srtuctures on the basis of Pb1-xMnxTe semimagnetic semiconductors thin films

    International Nuclear Information System (INIS)

    Mehrabova, M.A.; Kerimova, T.I.; Memishova, R.M.; Nuriyev, I.R.; Ismayilov, T.G.

    2010-01-01

    Full text : Narrow-band semimagnetic semiconductors (SMS) Pb 1 -xMn x Te are unique materials for infrared optoelectronics. The investigation of Faraday effect in Pb 1 -xMn x Te thin films of SMS is of a special interest. So it can be used at the construction of optic isolators, amplifiers, IR detectors and other equipments. In the given work Pb 1 -xMn x Te thin films (SMS) have been produced, the interband Faraday effect in these semiconductors has been theoretically and experimentally studied. Opportunities of making IR detectors have been studied. Pb 1 -xMn x Te thin films have been grown at BaF 2 substrates by the method of molecular beam condensation. The optimal conditions of producing thin films with high crystallic perfection, electrophysical and optical parameters have been determined. The energy spectrum and wave functions have been theoretically calculated for quantum-sized films of Pb 1 -xMn x Te SMS in the case when the surface of the film is perpendicular to the axis X and the spin-spin exchange interaction occurs between the electrons in the conductivity band (valence band) and the electrons of half-filled d-shells of manganese ions as well as taking into account electron spins and the band nonparabolicity. For the calculation of the spectra and wave functions double-band Kane model has been used. On the basis of the found formulae an analytical equation has been found out for interband Faraday rotation (IFR) depending on the energy of the incident photon, band gap and the film thickness. It has been shown that by the decrease in the band gap the value of the IFR angle increases too. The formula of parabolic approximation has been also obtained. The dependence of IFR angle on photon energy, band gap and the film thickness has been built. It has been specified that the decrease of the film thickness leads to a strong increase of IFR angle. The contribution of nonparabolicity into IFR angle has been established, so taking into consideration the band

  14. PHOTOSENSITIVE STRUCTURES ON THE BASIS OF THIN FILMS OF SEMIMAGNETIC SEMICONDUCTORS Pb1-x Mnx Te

    International Nuclear Information System (INIS)

    Mehrabova, M.A; Nuriyev, I.R; Ismayilov, T.G; Kerimova, T.I; Mamishova, R.M

    2011-01-01

    Full text: Narrow-band semimagnetic semiconductors (SMS) Pb1-xMnxTe are unique materials for infrared (IR) optoelectronics.The investigation of Faraday effect in Pb1-xMnxTe thin films of SMS is of a special interest. So it can be used at the construction of optic isolators, amplifiers, IR detectors and other equipments.In the given work Pb1-xMnxTe thin films (SMS) have been produced, the interband Faraday effect in these semiconductors has been theoretically and experimentally studied. Opportunities of making IR detectors have been studied. Pb1-xMnxTe (x=0.005 0.06) thin films have been grown at BaF2 substrates by the method of molecular beam condensation. The optimal conditions of producing thin films with high crystallic perfection, electrophysical and optical parameters have been determined [1]. The energy spectrum and wave functions have been theoretically calculated for quantum-sized films of Pb1-xMnxTe SMS in the case when the surface of the film is perpendicular to the axis X and the spin-spin exchange interaction occurs between the electrons in the conductivity band (valence band) and the electrons of half-filled d-shells of manganese ions as well as taking into account electron spins and the band nonparabolicity. For the calculation of the spectra and wave functions double-band Kane model has been used. On the basis of the found formulae an analytical equation has been found out for interband Faraday rotation (IFR) depending on the energy of the incident photon, band gap and the film thickness. It has been shown that by the decrease in the band gap the value of the IFR angle increases too [2]. The formula of parabolic approximation has been also obtained. The dependence of IFR angle on photon energy, band gap and the film thickness has been built. It has been specified that the decrease of the film thickness leads to a strong increase of IFR angle. The contribution of nonparabolicity into IFR angle has been established, so taking into consideration the

  15. Chemically synthesized PbS Nano particulate thin films for a rapid NO2 gas sensor

    Directory of Open Access Journals (Sweden)

    Burungale Vishal V.

    2016-03-01

    Full Text Available Rapid NO2 gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO2 gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO2 gas was measured at different operating temperatures, from 50 to 200 °C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 °C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO2 at 150 °C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.

  16. Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

    Directory of Open Access Journals (Sweden)

    Hariyadi Soetedjo

    2018-03-01

    Full Text Available Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1 and (2 0 0 occurs during deposition. Keywords: Thin films, Lead sulfide, Sputtering, Resistivity, Semiconductor, Infrared

  17. Optical constants of CH3NH3PbBr3 perovskite thin films measured by spectroscopic ellipsometry

    KAUST Repository

    Alias, Mohd Sharizal; Dursun, Ibrahim; Saidaminov, Makhsud I.; Diallo, Elhadj Marwane; Mishra, Pawan; Ng, Tien Khee; Bakr, Osman; Ooi, Boon S.

    2016-01-01

    function) of CH3NH3PbBr3 perovskite thin films using spectroscopic ellipsometry. Due to the existence of voids, the refractive index of the thin films is around 8% less than the single crystals counterpart. The energy bandgap is around 2.309 eV as obtained

  18. Pulsed laser deposited Pb(Zr,Ti)O3 thin films with excellent piezoelectric and mechanical properties

    NARCIS (Netherlands)

    Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Woldering, L.A.; Abelmann, Leon; Elwenspoek, Michael Curt

    We present for the first time the combined measured piezoelectric and mechanical properties of epitaxial, (110) oriented Pb(ZrxTi1-x) (PZT) thin films grown on microfabricated silicon cantilevers using pulsed laser deposition (PLD, x=0.4, 0.52, 0.6 and 0.8). The grown PZT thin films develop a strong

  19. Thin-Film Transformation of NH4 PbI3 to CH3 NH3 PbI3 Perovskite: A Methylamine-Induced Conversion-Healing Process.

    Science.gov (United States)

    Zong, Yingxia; Zhou, Yuanyuan; Ju, Minggang; Garces, Hector F; Krause, Amanda R; Ji, Fuxiang; Cui, Guanglei; Zeng, Xiao Cheng; Padture, Nitin P; Pang, Shuping

    2016-11-14

    Methylamine-induced thin-film transformation at room-temperature is discovered, where a porous, rough, polycrystalline NH 4 PbI 3 non-perovskite thin film converts stepwise into a dense, ultrasmooth, textured CH 3 NH 3 PbI 3 perovskite thin film. Owing to the beneficial phase/structural development of the thin film, its photovoltaic properties undergo dramatic enhancement during this NH 4 PbI 3 -to-CH 3 NH 3 PbI 3 transformation process. The chemical origins of this transformation are studied at various length scales. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Chemical Bath Deposition of PbS:Hg2+ Nanocrystalline Thin Films

    Directory of Open Access Journals (Sweden)

    R. Palomino-Merino

    2013-01-01

    Full Text Available Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB face. The grain size determined by using X-rays spectra for undoped samples was found to be ~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were used to calculate the Eg, showing a shift in the range 1.4–2.4 eV. Raman spectroscopy exhibited an absorption band ~135 cm−1 displaying only a PbS ZB structure.

  1. Optical constants of CH3NH3PbBr3 perovskite thin films measured by spectroscopic ellipsometry

    KAUST Repository

    Alias, Mohd Sharizal

    2016-07-14

    The lack of optical constants information for hybrid perovskite of CH3NH3PbBr3 in thin films form can delay the progress of efficient LED or laser demonstration. Here, we report on the optical constants (complex refractive index and dielectric function) of CH3NH3PbBr3 perovskite thin films using spectroscopic ellipsometry. Due to the existence of voids, the refractive index of the thin films is around 8% less than the single crystals counterpart. The energy bandgap is around 2.309 eV as obtained from photoluminescence and spectrophotometry spectra, and calculated from the SE analysis. The precise measurement of optical constants will be useful in designing optical devices using CH3NH3PbBr3 thin films.

  2. Deposition and characteristics of PbS thin films by an in-situ solution chemical reaction process

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Junna; Ji, Huiming; Wang, Jian; Zheng, Xuerong; Lai, Junyun; Liu, Weiyan; Li, Tongfei [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); Ma, Yuanliang; Li, Haiqin; Zhao, Suqin [College of Physics and Electronic Information Engineering, Qinghai University for Nationalities, Xining 810007 (China); Jin, Zhengguo, E-mail: zhgjin@tju.edu.cn [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China)

    2015-09-01

    Preferential oriented and uniform PbS thin films were deposited by a room temperature in-situ solution chemical reaction process, in which the lead nitrate as precursor in a form of thin solid films from lead precursor solution was used to react with ammonium sulfide ethanol solution. Influence of 1-butanol addition in the lead precursor solution, Pb:S molar ratios in the separate cationic and anionic solutions, deposition cycle numbers and annealing treatment in Ar atmosphere on structure, morphology, chemical composition and optical absorption properties of the deposited PbS films were investigated based on X-ray diffraction, field emission scanning electron microscopy, energy dispersive spectrometer, atomic force microscopy, selected area electron diffraction, UV–vis, near infrared ray and fourier transform infrared spectroscopy measurements. The results showed that the deposited PbS thin films had a cubic structure and highly preferred orientation along with the plane (100). The deposition rate of single-layer was stable, about 30 nm in thickness per deposition cycle. - Highlights: • Time-efficiency synthetic method for the preparation of lead sulfide (PbS) films • Effect of 1-butanol addition into cationic precursor solution is discussed. • Growth rate of the PbS films is stable at about 30 nm per cycle.

  3. Optical properties of Pb2 -based aggregated phases in CsBr Thin film and single crystal matrices

    Science.gov (United States)

    Nikl, M.; Nitsch, K.; Mihokova, E.; Polak, K.; Fabeni, P.; Pazzi, G. P.; Gurioli, M.; Phani, R.; Santucci, S.; Scacco, A.; Somma, F.

    Emission characteristics of CsPbBr3 and Cs4PbBr6 aggregates in CsBr bulk and thin film matrices are reported. The emission of the former aggregated phase is peaking about 520-560 nm. It shows small Stokes shift (50 meV) related to narrow free exciton emission line of sub-nanosecond decay times. Quantum size effect was evidenced for the aggregates of 6-7 nm in diameter. The Cs4PbBr6 aggregates show emission peak at 375 nm and overall emission characteristics are similar to those of KBr: Pb, which is explained by very close local arrangement of emission centres-(PbBr6)4- octahedra-in both structures.

  4. Growth and characteristics of PbS/polyvinyl alcohol nanocomposites for flexible high dielectric thin film applications

    International Nuclear Information System (INIS)

    Hmar, J.J.L.; Majumder, T.; Mondal, S.P.

    2016-01-01

    PbS/polyvinyl alcohol (PbS/PVA) nanocomposites have been grown by a chemical bath deposition process at various growth temperatures (60–100 °C). Transmission electron microscopy (TEM) study revealed the formation of PbS nanoparticles of diameter 6–20 nm encapsulated in PVA matrix. Optical band gap of the nanocomposite films have been found to decrease (1.45 eV–0.67 eV) with increase in growth temperature from 60 °C to 100 °C. The impedance measurements have been carried out by depositing the PbS/PVA films on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrates. The room temperature dielectric permittivity and ac conductivity measurements have been carried out for ITO/PbS/PVA/Al devices deposited at various growth temperatures. The nanocomposite films demonstrate superior dielectric permittivity compare to pure PVA polymer. The flexibility studies of ITO/PbS/PVA/Al devices have been performed at different bending angles. - Highlights: • PbS nanoparticles of diameter 6–20 nm were grown in polyvinyl (PVA) matrix. • Optical band gap of nanocomposite films was varied from 1.45–0.67 eV. • The nanocomposite thin films demonstrated superior dielectric permittivity. • Flexibility study of thin film devices was performed at various bending angles.

  5. Effect of the Ultrasonic Substrate Vibration on Nucleation and Crystallization of PbI2 Crystals and Thin Films

    Directory of Open Access Journals (Sweden)

    Fatemeh Zabihi

    2018-01-01

    Full Text Available Preparation of defect-free and well-controlled solution-processed crystalline thin films is highly desirable for emerging technologies, such as perovskite solar cells. In this work, using PbI2 as a model solution with a vast variety of applications, we demonstrate that the excitation of a liquid thin film by imposed ultrasonic vibration on the film substrate significantly affects the nucleation and crystallization kinetics of PbI2 and the morphology of the resulting solid thin film. It is found that by applying ultrasonic vibration to PbI2 solution spun onto an ITO substrate with a moderate power and excitation duration (5 W and 1 min for the 40 kHz transducer used in this study, the nucleation rate increases and the crystals transform from 2D or planar to epitaxial 3D columnar structures, resulting in the suppression of crystallization dewetting. The effects of various induced physical phenomena as a result of the excitation by ultrasonic vibration are discussed, including microstreaming and micromixing, increased heat transfer and local temperature, a change in the thermodynamic state of the solution, and a decrease in the supersaturation point. It is shown that the ultrasonic-assisted solution deposition of the PbI2 thin films is controllable and reproducible, a process which is low-cost and in line with the large-scale fabrication of such solution-processed thin films.

  6. Processing and properties of Pb(Mg(1/3)Nb(2/3))O3--PbTiO3 thin films by pulsed laser deposition

    Science.gov (United States)

    Tantigate, C.; Lee, J.; Safari, A.

    1995-03-01

    The objectives of this study were to prepare in situ Pb(Mg(1/3)Nb(2/3))O3 (PMN) and PMN-PT thin films by pulsed laser deposition and to investigate the electrical features of thin films for possible dynamic random access memory (DRAM) and microactuator applications. The impact of processing parameters such compositions, substrate temperature, and oxygen pressure on perovskite phase formation and dielectric characteristics were reported. It was found that the highest dielectric constant, measured at room temperature and 10 kHz, was attained from the PMN with 99% perovskite.

  7. Compliant ferroelastic domains in epitaxial Pb(Zr,Ti)O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Feigl, L.; McGilly, L. J.; Sandu, C. S.; Setter, N. [Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne CH-1015 (Switzerland)

    2014-04-28

    Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr,Ti)O{sub 3} thin films, of very low defect density, grown on DyScO{sub 3} substrates. The effect of 180° switching on well-ordered a/c 90° domain patterns is investigated by a combination of transmission electron microscopy, piezoelectric force microscopy, and X-ray diffraction. It is shown that ferroelastic a-domains, having an in-plane polarization, can be created and completely removed on a local level by an out-of-plane electric field. The modifications of the ferroelastic domain pattern can be controlled by varying the parameters used during switching with a piezoresponse force microscope to produce the desired arrangement.

  8. Piezoelectric coefficients of multilayer Pb(Zr,Ti)O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Muensit, S. [Prince of Songkla University, Department of Physics, Songkhla (Thailand); NANOTEC Center of Excellence at Prince of Songkhla University, Songkhla (Thailand); Sukwisut, P.; Khaenamkeaw, P. [Prince of Songkla University, Department of Physics, Songkhla (Thailand); Lang, S.B. [Ben-Gurion University of the Negev, Department of Chemical Engineering, Beer Sheva (Israel)

    2008-08-15

    Sol-gel techniques were used to prepare thin films of Pb(Zr{sub x},Ti{sub 1-x})O{sub 3} (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d{sub 33} piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT(52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching. (orig.)

  9. Epitaxial Pb(Zr,Ti)O3 thin films for a MEMS application

    International Nuclear Information System (INIS)

    Nguyen, Minh D; Vu, Hung N; Blank, Dave H A; Rijnders, Guus

    2011-01-01

    This research presents the deposition and device fabrication of epitaxial Pb(Zr,Ti)O 3 (PZT) thin films for applications in microelectromechanical systems (MEMS). A piezoelectric micro-membrane is described as an example. Using the pulsed laser deposition (PLD) technique and the MEMS microfabrication process, the piezo-membranes with diameters ranging from 200 to 500 μm were obtained. The displacement of piezo-membranes increased from 5.1 to 17.5 nm V −1 with a piezoelectric-membrane diameter in the range of 200–500 μm. Furthermore, the effect of PZT film-thickness on the mechanical properties has been investigated. By using the conductive-oxide SrRuO 3 (SRO) layers as the electrodes, the degradation of both ferroelectric and piezoelectric properties is prevented up to 10 10 switching cycles

  10. Optoelectronic and thermoelectric properties in Ga doped {beta}- PbS{sub 2} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Geethu, R.; Jacob, Rajani [Thin Film Research Lab, U.C. College, Aluva, Cochin, Kerala (India); Shripathi, T.; Okram, G.S.; Ganesan, V.; Tripathi, Shilpa; Fatima, Anees [UGC-DAE CSR, Khandwa Road, Indore-452 001, Madhya Pradesh (India); Sreenivasan, P.V. [Department of Chemistry, U.C. College, Aluva, Cochin, Kerala (India); Urmila, K.S.; Pradeep, B. [Solid State Physics Laboratory, Cochin University of Science and Technology, Cochin, Kerala (India); Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin Film Research Lab, U.C. College, Aluva, Cochin, Kerala (India)

    2012-06-15

    Lead sulphide nanostructured thin films were grown on soda lime glass substrates by chemical bath deposition. The films were then doped with gallium using vacuum evaporation technique. X-ray diffraction (XRD) established the structural type of the host films to be tetragonal {beta}-PbS{sub 2} with average grain size of the order of 15 nm. The nanostructure of films was further confirmed from scanning electron and atomic force micrographs. The shift in the binding energies of the 4f and 4d states of lead, 2p state of sulphur and the 2p states of Ga from their elemental binding energy values, determined from X-ray photoelectron spectroscopy (XPS), indicated intact chemical bonding in the compound. Compositional analysis showed about 0.01% doping of Ga into PbS{sub 2}. Low temperature thermopower measurements indicated p-type conductivity for the films with Fermi level positioned at about 0.017 eV above the maxima of valence band. Optical absorption studies in conjunction with photo sensitivity measurements established its pertinence in junction formation in photovoltaic applications due to the blue shift in the band gap to 2.37 eV and the increased photoconductivity of the films.

  11. Piezoelectric properties of PbTiO(3) thin films characterized with piezoresponse force and high resolution transmission electron microscopy

    NARCIS (Netherlands)

    Morelli, A.; Venkatesan, Sriram; Kooi, B. J.; Palasantzas, G.; De Hosson, J. Th. M.

    2009-01-01

    In this paper we investigate the piezoelectric properties of PbTiO(3) thin films grown by pulsed laser deposition with piezoresponse force microscopy and transmission electron microscopy. The as-grown films exhibit an upward polarization, inhomogeneous distribution of piezoelectric characteristics

  12. Preparation of nanostructured PbS thin films as sensing element for NO{sub 2} gas

    Energy Technology Data Exchange (ETDEWEB)

    Kaci, S., E-mail: k_samira05@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria); Keffous, A.; Hakoum, S. [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria); Trari, M. [Université des Sciences et Technologies Houari Boumediene (USTHB), Laboratoire de Stockage et de Valorisation des Eneriges Renouvelables, Faculté de Chimie, BP 32, EL Alia, 16111 Bab Ezzouar, Algiers (Algeria); Mansri, O.; Menari, H. [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria)

    2014-06-01

    In this work, we demonstrate that semiconducting films of A{sub IV}B{sub VI} compounds, in particular, of nanostructured lead sulfide (PbS) which prepared by chemical bath deposition (CBD), can be used as a sensing element for nitrogen dioxide (NO{sub 2}) gas. The CBD method is versatile, simple in implementation and gives homogeneous semiconductor structures. We have prepared PbS nanocrystalline thin film at different reaction baths and temperatures. In the course of deposition, variable amounts of additives, such as organic substances among them, were introduced into the baths. The energy dispersive analysis (EDX) confirms the chemical composition of PbS films. A current–voltage (I–V) characterization of Pd/nc-PbS/a-SiC:H pSi(100)/Al Schottky diode structures were studied in the presence of NO{sub 2} gas. The gas sensing behavior showed that the synthesized PbS nanocrystalline thin films were influenced by NO{sub 2} gas at room temperature. The results can be used for developing an experimental sensing element based on chemically deposited nanostructured PbS films which can be applicable in gas sensors.

  13. Influence of PbCl2 content in PbI2 solution of DMF on the absorption, crystal phase, morphology of lead halide thin films and photovoltaic performance in planar perovskite solar cells

    International Nuclear Information System (INIS)

    Wang, Mao; Shi, Chengwu; Zhang, Jincheng; Wu, Ni; Ying, Chao

    2015-01-01

    In this paper, the influence of PbCl 2 content in PbI 2 solution of DMF on the absorption, crystal phase and morphology of lead halide thin films was systematically investigated and the photovoltaic performance of the corresponding planar perovskite solar cells was evaluated. The result revealed that the various thickness lead halide thin film with the small sheet-like, porous morphology and low crystallinity can be produced by adding PbCl 2 powder into PbI 2 solution of DMF as a precursor solution. The planar perovskite solar cell based on the 300-nm-thick CH 3 NH 3 PbI 3−x Cl x thin film by the precursor solution with the mixture of 0.80 M PbI 2 and 0.20 M PbCl 2 exhibited the optimum photoelectric conversion efficiency of 10.12% along with an open-circuit voltage of 0.93 V, a short-circuit photocurrent density of 15.70 mA cm −2 and a fill factor of 0.69. - Graphical abstract: The figure showed the surface and cross-sectional SEM images of lead halide thin films using the precursor solutions: (a) 0.80 M PbI 2 , (b) 0.80 M PbI 2 +0.20 M PbCl 2 , (c) 0.80 M PbI 2 +0.40 M PbCl 2 , and (d) 0.80 M PbI 2 +0.60 M PbCl 2 . With the increase of the PbCl 2 content in precursor solution, the size of the lead halide nanosheet decreased and the corresponding thin films gradually turned to be porous with low crystallinity. - Highlights: • Influence of PbCl 2 content on absorption, crystal phase and morphology of thin film. • Influence of perovskite film thickness on photovoltaic performance of solar cell. • Lead halide thin film with small sheet-like, porous morphology and low crystallinity. • Planar solar cell with 300 nm-thick perovskite thin film achieved PCE of 10.12%.

  14. Synthesis and Characterization of Pb(Zr., Ti.)O-Pb(Nb/, Zn/)O Thin Film Cantilevers for Energy Harvesting Applications

    KAUST Repository

    Fuentes-Fernandez, E. M. A.

    2012-01-18

    A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47) Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ~300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.

  15. Dual-Phase CsPbBr3 -CsPb2 Br5 Perovskite Thin Films via Vapor Deposition for High-Performance Rigid and Flexible Photodetectors.

    Science.gov (United States)

    Tong, Guoqing; Li, Huan; Li, Danting; Zhu, Zhifeng; Xu, Enze; Li, Guopeng; Yu, Linwei; Xu, Jun; Jiang, Yang

    2018-02-01

    Inorganic perovskites with special semiconducting properties and structures have attracted great attention and are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process with a controlled excess of PbBr 2 , dual-phase all-inorganic perovskite composite CsPbBr 3 -CsPb 2 Br 5 thin films are prepared as light-harvesting layers and incorporated in a photodetector (PD). The PD has a high responsivity and detectivity of 0.375 A W -1 and 10 11 Jones, respectively, and a fast response time (from 10% to 90% of the maximum photocurrent) of ≈280 µs/640 µs. The device also shows an excellent stability in air for more than 65 d without encapsulation. Tetragonal CsPb 2 Br 5 provides satisfactory passivation to reduce the recombination of the charge carriers, and with its lower free energy, it enhances the stability of the inorganic perovskite devices. Remarkably, the same inorganic perovskite photodetector is also highly flexible and exhibits an exceptional bending performance (>1000 cycles). These results highlight the great potential of dual-phase inorganic perovskite films in the development of optoelectronic devices, especially for flexible device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Pb(Zr,TiO3 (PZT Thin Film Sensors for Fully-Integrated, Passive Telemetric Transponders

    Directory of Open Access Journals (Sweden)

    Richard X. FU

    2011-04-01

    Full Text Available The great potential of taking advantages of PZT in a single chip to achieve inexpensive, fully-integrated, passive telemetric transponders has been shown in this paper. The processes for the sputter deposition of Pb(Zr,TiO3 (PZT thin films from two different composite targets on both Si and c-plane sapphire substrates have been demonstrated. PZT thin films have been deposited by sputter technique. PZT films were deposited onto substrates (Si [(100 Cz wafer] and c-plane sapphire (0001//Ti//Pt followed by sputter-deposited Pt top electrodes. X-ray diffraction results showed that both sputtered PZT films were textured along the [110] direction. The degree of preference for the [110] direction was greater on sapphire substrate where the intensity of that peak is seen to be larger compared to the intensity one Si substrate. TEM data revealed that both sputtered PZT films were polycrystalline in nature. Selected area diffraction (SAD pattern showed that the degree of disorientation between the crystallites was smaller on sapphire substrate compared to on Si substrate, which confirmed the results from the XRD. The remnant polarization Pr on sapphire substrate was larger than on Si’s. The leakage current for the 11 % Pb target sputtered film was much less than 22 % Pb target sputtered film. The breakdown voltage on sapphire substrate was the best. However, for the 11 % Pb target sputtered film’s breakdown voltage was much higher than 22 % Pb target sputtered film.

  17. Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films

    International Nuclear Information System (INIS)

    Khan, Shamshad A.; Khan, Zishan H.; El-Sebaii, A.A.; Al-Marzouki, F.M.; Al-Ghamdi, A.A.

    2010-01-01

    (PbSe) 100-x Cd x thin films of thickness 3000 A with variable concentrations of Cd (x=5, 10, 15 and 20) were prepared by thermal evaporation on glass substrates at room temperature at a base pressure of 10 -6 Torr. The structural, optical and electrical properties of these films were studied. X-ray diffraction patterns were used to determine the crystal structure of the films. Films were of polycrystalline texture over the whole range of study. Optical constants of all films were determined by absorbance and reflection measurements in a wavelength range 400-1200 nm. Analysis of the optical absorption data showed that the rule of direct transitions predominates. The values of the absorption coefficient (α), extinction coefficient (k) and imaginary part of the dielectric constant were found to increase with increasing Cd content in lead chalcogenides while the refractive index (n) and real part of dielectric constant were increased with increasing Cd concentration up to 15% and then they decreased with 20% of Cd content in PbSe. These results were interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities and activation energies of the films were measured in the temperature range 298-398 K. It was observed that the dc conductivity increases at all temperatures with the increase of Cd content in lead chalcogenide system. The experimental data suggests that the conduction is due to the thermally assisted tunneling of the carriers in the localized states near the band edges. The activation energy and optical band gap were found to decrease with increasing Cd concentration in lead chalcogenide.

  18. Nanocrystalline CsPbBr3 thin films: a grain boundary opto-electronic study

    Science.gov (United States)

    Conte, G.; Somma, F.; Nikl, M.

    2005-01-01

    CsPbBr3 thin films with nanocrystalline morphology were studied by using optoelectronic techniques to infer the grain boundary region in respect of the crystallite's interior performance. Co-evaporation of puri-fied powders or crushed Bridgman single crystals were used to deposit materials and compare recombina-tion mechanism and dielectric relaxation processes within them. Nanosecond photoconduction decay was observed on both materials as well as activated hopping transport. An asymmetric Debye-like peak was evaluated from impedance spectroscopy with a FWHM value, which remains constant for 1.25 +/- 0.02 deca-des, addressing the presence of a tight conductivity relaxation times distribution. The evaluated activation energy, equal to 0.72 +/- 0.05 eV, similar to that estimated by DC measurements, is well smaller then that expected for an intrinsic material with exciton absorption at 2.36 eV. A simple model based on Voigt's elements was used to model the electronic characteristics of these nanostructured materials, to discuss observed results and define the role played by grain boundaries.

  19. Realization of PbS thin films by reactive evaporation technique for possible opto-electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    A, Abhilash, E-mail: abhiltp@cusat.ac.in; Nair, Aparna S.; S, Rajasree; E, Hiba Rahman; Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022 (India)

    2015-06-24

    Stoichiometric Lead sulphide (PbS) thin films were successfully prepared on glass substrates by reactive evaporation technique. Elemental evaporation of lead and sulphur taken in different sources onto substrates held at temperature of 400±5K employed in the present study. The structural as well as compositional studies compromises compound formation. Electrical transport properties and optical co-efficient were evaluated from appropriate characterization techniques.

  20. Investigation on thermal evaporated CH3NH3PbI3 thin films

    Directory of Open Access Journals (Sweden)

    Youzhen Li

    2015-09-01

    Full Text Available CH3NH3I, PbI2 and CH3NH3PbI3 films were fabricated by evaporation and characterized with X-ray Photoelectron Spectroscopy (XPS and X-ray diffraction (XRD. The XPS results indicate that the PbI2 and CH3NH3PbI3 films are more uniform and stable than the CH3NH3I film. The atomic ratio of the CH3NH3I, PbI2 and CH3NH3PbI3 films are C:N:I=1.00:1.01:0.70, Pb:I= 1.00:1.91 and C: N: Pb: I = 1.29:1.07:1.00:2.94, respectively. The atomic ratio of CH3NH3PbI3 is very close to that of the ideal perovskite. Small angle x-ray diffraction results demonstrate that the as evaporated CH3NH3PbI3 film is crystalline. The valence band maximum (VBM and work function (WF of the CH3NH3PbI3 film are about 0.85eV and 4.86eV, respectively.

  1. Influence of grain size on structural and optic properties of PbS thin films produced by SILAR method

    International Nuclear Information System (INIS)

    Güneri, E.; Göde, F.; Çevik, S.

    2015-01-01

    In this the paper, we use the successive ion layer adsorption and reaction technique (SILAR) chemical deposition method to fabricate good quality PbS thin films and the effects of grain size on the structural and optical properties of the thin films were determined by varying deposition cases. All of the films obtained in different dipping cycles show cubic rock-salt (NaCl) structure. The preferred orientation changed from the (111) direction to the (200) direction with increasing dipping cycles. Grain size determined from scanning electron microscopy (SEM) increased from 32 nm to 104 nm. Moreover, changing of atomic ratio of the thin films is determined according to the results of energy dispersive X-ray (EDX). The transmission of the thin films was characterized by UV–Vis measurements from 400 nm to 1100 nm. It was determined from the allowed direct graphics that the energy band gaps of the thin films shift from 1.33 eV to 1.92 eV in connection with deposition conditions. The variation in band gap may be attributed to the variation of grain size. Additionally, the refractive index (n), extinction coefficient (k), real (ε 1 ) and imaginary (ε 2 ) dielectric constants varied with increasing immersion cycles. - Highlights: • The effects of grain size on the structural, optical properties of PbS thin films deposited by SILAR were investigated. • The preferred orientation varied from the (111) direction to the (200) direction with changing grain size. • The energy band gaps of the thin films shift from 1.33 eV to 1.92 eV in connection with deposition conditions. • The refractive index, extinction coefficient, real and imaginary dielectric constants varied with increasing dipping cycles

  2. Influence of grain size on structural and optic properties of PbS thin films produced by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Güneri, E., E-mail: emineg7@gmail.com [Department of Primary Education, Erciyes University, Kayseri 38039, Turkey. (Turkey); Göde, F.; Çevik, S. [Department of Physics, Mehmet Akif Ersoy University, Burdur 15030, Turkey. (Turkey)

    2015-08-31

    In this the paper, we use the successive ion layer adsorption and reaction technique (SILAR) chemical deposition method to fabricate good quality PbS thin films and the effects of grain size on the structural and optical properties of the thin films were determined by varying deposition cases. All of the films obtained in different dipping cycles show cubic rock-salt (NaCl) structure. The preferred orientation changed from the (111) direction to the (200) direction with increasing dipping cycles. Grain size determined from scanning electron microscopy (SEM) increased from 32 nm to 104 nm. Moreover, changing of atomic ratio of the thin films is determined according to the results of energy dispersive X-ray (EDX). The transmission of the thin films was characterized by UV–Vis measurements from 400 nm to 1100 nm. It was determined from the allowed direct graphics that the energy band gaps of the thin films shift from 1.33 eV to 1.92 eV in connection with deposition conditions. The variation in band gap may be attributed to the variation of grain size. Additionally, the refractive index (n), extinction coefficient (k), real (ε{sub 1}) and imaginary (ε{sub 2}) dielectric constants varied with increasing immersion cycles. - Highlights: • The effects of grain size on the structural, optical properties of PbS thin films deposited by SILAR were investigated. • The preferred orientation varied from the (111) direction to the (200) direction with changing grain size. • The energy band gaps of the thin films shift from 1.33 eV to 1.92 eV in connection with deposition conditions. • The refractive index, extinction coefficient, real and imaginary dielectric constants varied with increasing dipping cycles.

  3. Spin-coating deposition of PbS and CdS thin films for solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Jayesh; Mighri, Frej [Laval University, CREPEC, Department of Chemical Engineering, Quebec, QC (Canada); Ajji, Abdellah [Ecole Polytechnique, CREPEC, Chemical Engineering Department, Montreal, QC (Canada); Tiwari, Devendra; Chaudhuri, Tapas K. [Charotar University of Science and Technology (CHARUSAT), Dr. K.C. Patel Research and Development Centre, Anand District, Gujarat (India)

    2014-12-15

    In this work, we describe a simple spin-coating deposition technique for lead sulphide (PbS) and cadmium sulphide (CdS) films from a methanolic metal-thiourea complex. The characterization of the films by X-ray diffraction and X-ray photoelectron spectroscopy techniques revealed that pure cubic phase PbS and CdS layers were formed via this method. As shown by atomic force microscopy and scanning electron microscopy results, both films were homogeneous and presented a smooth surface. Optical properties showed that the energy band gap of PbS and CdS films were around 1.65 and 2.5 eV, respectively. The PbS film is p-type in nature with an electrical conductivity of around 0.8 S/cm. The hole concentration and mobility were 2.35 x 10{sup 18} cm{sup -3} and 2.16 x 10{sup -3} cm{sup 2}/V/s, respectively, as determined from Hall measurement. Both films were used to develop a thin film solar cell device of graphite/PbS/CdS/ITO/glass. Device characterization showed the power conversion efficiency of around 0.24 %. The corresponding open circuit voltage, short circuit current and fill factor were 0.570 V, 1.32 mA/cm{sup 2} and 0.32, respectively. (orig.)

  4. Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

    Science.gov (United States)

    Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

    2012-01-01

    In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

  5. Optimization of synthesis conditions of PbS thin films grown by chemical bath deposition using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, Ersin, E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Yücel, Yasin; Beleli, Buse [Department of Chemistry, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-09-05

    Highlights: • For the first time, RSM and CCD used for optimization of PbS thin film. • Tri-sodium citrate, deposition time and temperature were independent variables. • PbS thin film band gap value was 2.20 eV under the optimum conditions. • Quality of the film was improved after chemometrics optimization. - Abstract: In this study, PbS thin films were synthesized by chemical bath deposition (CBD) under different deposition parameters. Response surface methodology (RSM) was used to optimize synthesis parameters including amount of tri-sodium citrate (0.2–0.8 mL), deposition time (14–34 h) and deposition temperature (26.6–43.4 °C) for deposition of the films. 5-level-3-factor central composite design (CCD) was employed to evaluate effects of the deposition parameters on the response (optical band gap of the films). The significant level of both the main effects and the interaction are investigated by analysis of variance (ANOVA). The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV–visible spectrophotometer. The optimum amount of tri-sodium citrate, deposition time and deposition temperature were found to be 0.7 mL, 18.07 h and 30 °C respectively. Under these conditions, the experimental band gap of PbS was 2.20 eV, which is quite good correlation with value (1.98 eV) predicted by the model.

  6. Optimization of synthesis conditions of PbS thin films grown by chemical bath deposition using response surface methodology

    International Nuclear Information System (INIS)

    Yücel, Ersin; Yücel, Yasin; Beleli, Buse

    2015-01-01

    Highlights: • For the first time, RSM and CCD used for optimization of PbS thin film. • Tri-sodium citrate, deposition time and temperature were independent variables. • PbS thin film band gap value was 2.20 eV under the optimum conditions. • Quality of the film was improved after chemometrics optimization. - Abstract: In this study, PbS thin films were synthesized by chemical bath deposition (CBD) under different deposition parameters. Response surface methodology (RSM) was used to optimize synthesis parameters including amount of tri-sodium citrate (0.2–0.8 mL), deposition time (14–34 h) and deposition temperature (26.6–43.4 °C) for deposition of the films. 5-level-3-factor central composite design (CCD) was employed to evaluate effects of the deposition parameters on the response (optical band gap of the films). The significant level of both the main effects and the interaction are investigated by analysis of variance (ANOVA). The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV–visible spectrophotometer. The optimum amount of tri-sodium citrate, deposition time and deposition temperature were found to be 0.7 mL, 18.07 h and 30 °C respectively. Under these conditions, the experimental band gap of PbS was 2.20 eV, which is quite good correlation with value (1.98 eV) predicted by the model

  7. Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films

    International Nuclear Information System (INIS)

    Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo

    2001-01-01

    The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr,Ti)O 3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 o C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 o C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C--V characteristics, P--E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x--y alignment and the interface between electrode and PZT in MFM capacitors. copyright 2001 American Institute of Physics

  8. Structural and optical properties of ternary Cs-Pb-Cl nanoaggregates in thin films

    Czech Academy of Sciences Publication Activity Database

    Somma, F.; Aloe, P.; Mastro, Lo S.; Santucci, S.; Giampaolo, C.; Nikl, Martin; Nitsch, Karel; Fabeni, P.; Pazzi, G.P.

    2001-01-01

    Roč. 19, č. 6 (2001), s. 2237-2239 ISSN 1071-1023 Institutional research plan: CEZ:AV0Z1010914 Keywords : CsPbCl 3 * Cs 4PbCl 6 * nanoaggreates * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.549, year: 2001

  9. Effect of TEA on characteristics of CdS/PbS thin film solar cells prepared by CBD

    Directory of Open Access Journals (Sweden)

    Sattarian H.

    2016-09-01

    Full Text Available In this study, a solar cell with a glass/ITO/CdS/PbS/Al structure was constructed. Both window (CdS and absorption (PbS layers were deposited by chemical bath deposition (CBD method. The CdS window layer was deposited on ITO-glass. The PbS nanocrystalline thin film was prepared with and without triethanolamine on CdS films at bath temperature of 25 °C. CdS and PbS nanocrystals were identified using XRD and SEM. The cells are photosensitive in a large spectral range (at visible and near infrared regions. The cell with absorbing layer obtained from the bath without TEA has higher efficiency with the following parameters: the open circuit voltage (Voc is 275 mV, short circuit current (Jsc is 12.24 mA/cm2, maximum voltage (Vmax is 165 mV and maximum current (Jmax is 7.11 mA/cm2 with the efficiency η = 1.31 %, fill factor FF is 32 % under the illumination intensity of 90 mW/cm2. The cells have an area of 0.15 cm2.

  10. Chemical bath deposited PbS thin films on ZnO nanowires for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Gertman, Ronen [Dept of Chemistry, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Osherov, Anna; Golan, Yuval [Dept of Materials Engineering, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Visoly-Fisher, Iris, E-mail: irisvf@bgu.ac.il [Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, Jacob Blaustein Institutes for Desert Research, Ben Gurion University of the Negev, Sede Boqer Campus 84990 (Israel)

    2014-01-01

    Photovoltaic devices usually exploit mid-range band-gap semiconductors which absorb in the visible range of the solar spectrum. However, much energy is lost in the IR and near-IR range. We combined the advantages of small band-gap, bulk-like PbS deposited by facile, cheap and direct chemical bath deposition (CBD), with the good electronic properties of ZnO and the large surface area of nanowires, towards low cost photovoltaic devices utilizing IR and near-IR light. Surprisingly, CBD of PbS on ZnO, and particularly on ZnO nanowires, was not studied hitherto. Therefore, the mechanism of PbS growth by chemical bath deposition on ZnO nanowires was studied in details. A visible proof is shown for a growth mechanism starting from amorphous Pb(OH){sub 2} layer, that evolved into the ‘ion-by-ion’ growth mechanism. The growth mechanism and the resulting morphology at low temperatures were controlled by the thiourea concentration. The grain size affected the magnitude of the band-gap and was controlled by the deposition temperatures. Deposition above 40 °C resulted in bulk-like PbS with an optical band-gap of 0.4 eV. Methods were demonstrated for achieving complete PbS coverage of the complex ZnO NW architecture, a crucial requirement in optoelectronic devices to prevent shorts. Measurements of photocurrents under white and near-IR (784 nm) illumination showed that despite a 200 meV barrier for electron transfer at the PbS/ZnO interface, extraction of photo-electrons from PbS to the ZnO was feasible. The ability to harvest electrons from a narrow band-gap semiconductor deposited on a large surface-area electrode can advance the field towards high efficiency, low cost IR and near-IR sensors and third generation solar cells. - Highlights: • PbS was deposited on ZnO nanowires using chemical bath deposition. • At 50 °C the growth mechanism starts from an amorphous Pb(OH){sub 2} layer. • At 5 °C the growth mechanism of PbS can be controlled by thiourea concentrations

  11. Decoration of PbS nanoparticles on Al-doped ZnO nanorod array thin film with hydrogen treatment as a photoelectrode for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Hsiung; Chen, Chao-Hong [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chen, Dong-Hwang, E-mail: chendh@mail.ncku.edu.tw [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2013-03-25

    Highlights: ► AZO nanorod array thin film is used as a photoanode for solar water splitting. ► Hydrogen treatment and sensitization by PbS nanoparticles enhance photocurrent. ► A novel ITO/FTO-free composite photoelectrode is developed. ► The pre-fabrication and use of an extra TCO thin film substrate is unnecessary. -- Abstract: Al-doped ZnO (AZO) nanorod arrays thin film with hydrogen treatment is directly used as a photoelectrode for solar water splitting without an extra transparent conducting oxide (TCO) thin film because it possesses the functions of TCO thin film and photoactive 1-dimensional nanostructured semiconductor simultaneously. To enhance the absorption in the visible region, PbS nanoparticles decorated the AZO nanorods via successive ionic layer adsorption and reaction route. The PbS nanoparticles have a face-centered cubic structure and their decoration does not destroy the 1-dimensional morphology of AZO nanorod arrays. With increasing the cycle number of PbS nanoparticles decoration, the grain size and loading of PbS nanoparticles become larger gradually which leads to lower energy bandgap and stronger absorption. A maximum photocurrent density of 1.65 mW cm{sup −2} is obtained when the cycle number is 20, which is much higher than those without PbS nanoparticles sensitization or hydrogen treatment. This demonstrates that the AZO nanorod array thin film with hydrogen treatment can be directly used as a photoelectrode without an extra TCO thin film. Because the use of expensive metals can be avoided and the pre-fabrication of TCO thin film substrate is necessary no more, the fabrication of such a composite photoelectrode becomes simple and low-cost. So, it has great potentials in solar water splitting after sensitization by quantum dots capable of visible light absorption.

  12. Evaluating the residual stress in PbTiO3 thin films prepared by a polymeric chemical method

    International Nuclear Information System (INIS)

    Valim, D; Filho, A G Souza; Freire, P T C; Filho, J Mendes; Guarany, C A; Reis, R N; Araujo, E B

    2004-01-01

    We report a study of residual stress in PbTiO 3 (PT) thin films prepared on Si substrates by a polymeric chemical method. The E(1TO) frequency was used to evaluate the residual stress through an empirical equation available for bulk PT. We find that the residual stress in PT films increases as the film thickness decreases and conclude that it originates essentially from the contributions of extrinsic and intrinsic factors. Polarized Raman experiments showed that the PT films prepared by a polymeric chemical method are somewhat a-domain (polar axis c parallel to the substrate) oriented

  13. Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

    2015-05-01

    Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

  14. Surfaces of colloidal PbSe nanocrystals probed by thin-film positron annihilation spectroscopy

    Directory of Open Access Journals (Sweden)

    L. Chai

    2013-08-01

    Full Text Available Positron annihilation lifetime spectroscopy and positron-electron momentum density (PEMD studies on multilayers of PbSe nanocrystals (NCs, supported by transmission electron microscopy, show that positrons are strongly trapped at NC surfaces, where they provide insight into the surface composition and electronic structure of PbSe NCs. Our analysis indicates abundant annihilation of positrons with Se electrons at the NC surfaces and with O electrons of the oleic ligands bound to Pb ad-atoms at the NC surfaces, which demonstrates that positrons can be used as a sensitive probe to investigate the surface physics and chemistry of nanocrystals inside multilayers. Ab initio electronic structure calculations provide detailed insight in the valence and semi-core electron contributions to the positron-electron momentum density of PbSe. Both lifetime and PEMD are found to correlate with changes in the particle morphology characteristic of partial ligand removal.

  15. Strong Quantum Size Effects in Pb(111) Thin Films Mediated by Anomalous Friedel Oscillations

    Science.gov (United States)

    Jia, Yu; Wu, Biao; Li, Chong; Einstein, T. L.; Weitering, H. H.; Zhang, Zhenyu

    2010-08-01

    Using first-principles calculations within density functional theory, we study Friedel oscillations (FOs) in the electron density at different metal surfaces and their influence on the lattice relaxation and stability of ultrathin metal films. We show that the FOs at the Pb(111) surface decay as 1/x with the distance x from the surface, different from the conventional 1/x2 power law at other metal surfaces. The underlying physical reason for this striking difference is tied to the strong nesting of the two different Fermi sheets along the Pb(111) direction. The interference of the strong FOs emanating from the two surfaces of a Pb(111) film, in turn, not only results in superoscillatory interlayer relaxations around the center of the film, but also determines its stability in the quantum regime. As a simple and generic picture, the present findings also explain why quantum size effects are exceptionally robust in Pb(111) films.

  16. Growth of Pb(Ti,Zr)O 3 thin films by metal-organic molecular beam epitaxy

    Science.gov (United States)

    Avrutin, V.; Liu, H. Y.; Izyumskaya, N.; Xiao, B.; Özgür, Ü.; Morkoç, H.

    2009-02-01

    Single-crystal Pb(Zr xTi 1-x)O 3 thin films have been grown on (0 0 1) SrTiO 3 and SrTiO 3:Nb substrates by molecular beam epitaxy using metal-organic source of Zr and two different sources of reactive oxygen—RF plasma and hydrogen-peroxide sources. The same growth modes and comparable structural properties were observed for the films grown with both oxygen sources, while the plasma source allowed higher growth rates. The films with x up to 0.4 were single phase, while attempts to increase x beyond gave rise to the ZrO 2 second phase. The effects of growth conditions on growth modes, Zr incorporation, and phase composition of the Pb(Zr xTi 1-x)O 3 films are discussed. Electrical and ferroelectric properties of the Pb(Zr xTi 1-x)O 3 films of ~100 nm in thickness grown on SrTiO 3:Nb were studied using current-voltage, capacitance-voltage, and polarization-field measurements. The single-phase films show low leakage currents and large breakdown fields, while the values of remanent polarization are low (around 5 μC/cm 2). It was found that, at high sweep fields, the contribution of the leakage current to the apparent values of remanent polarization can be large, even for the films with large electrical resistivity (˜10 8-10 9 Ω cm at an electric filed of 1 MV/cm). The measured dielectric constant ranges from 410 to 260 for Pb(Zr 0.33Ti 0.67)O 3 and from 313 to 213 for Pb(Zr 0.2Ti 0.8)O 3 in the frequency range from 100 to 1 MHz.

  17. Preparation and switching kinetics of Pb(Zr, Ti)O sub 3 thin films deposited by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hase, Takashi; Shiosaki, Tadashi [Kyoto Univ. (Japan). Faculty of Engineering

    1991-09-01

    Ferroelectric Pb(Zr, Ti)O{sub 3} (PZT) thin films have been prepared on Pt/Ti/SiO{sub 2}/Si and Pt/SiO{sub 2}/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT (80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595degC on highly (111)-oriented Pt films formed on SiO{sub 2}/Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50 {mu}m{sup 2}, the switching time and the switched charge density measured were 20 ns and 10 {mu}C/cm{sup 2}, respectively. The switching time was strongly dependent on the electrode area. (author).

  18. Preparation and switching kinetics of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Hase, Takashi; Shiosaki, Tadashi

    1991-01-01

    Ferroelectric Pb(Zr, Ti)O 3 [PZT] thin films have been prepared on Pt/Ti/SiO 2 /Si and Pt/SiO 2 /Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT (80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595degC on highly (111)-oriented Pt films formed on SiO 2 /Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50 μm 2 , the switching time and the switched charge density measured were 20 ns and 10 μC/cm 2 , respectively. The switching time was strongly dependent on the electrode area. (author)

  19. Tunnelling spectroscopy of BaFe{sub 2}As{sub 2}/Au/PbIn thin film junctions

    Energy Technology Data Exchange (ETDEWEB)

    Doering, Sebastian; Schmidt, Stefan; Schmidl, Frank; Tympel, Volker; Grosse, Veit; Seidel, Paul [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena (Germany); Haindl, Silvia; Iida, Kazumasa; Kurth, Fritz; Holzapfel, Bernhard [IFW Dresden, Institut fuer Metallische Werkstoffe, Dresden (Germany)

    2011-07-01

    Tunnelling spectroscopy is an important tool to investigate the properties of iron-based superconductors. In contrast to commonly used point contact Andreev reflection (PCAR) technique, we fabricated hybrid superconductor / normal metal / superconductor (SNS) thin film structures, with tunable barrier thickness and area. For the base electrode we use Ba(Fe{sub 0.9}Co{sub 0.1}){sub 2}As{sub 2} thin films, produced via pulsed laser deposition (PLD). A gold layer was sputtered to form the barrier, while the counter electrode material is the conventional superconductor PbIn with a T{sub c} of 7.2 K. For temperatures below 7.2 K the spectrum shows a subharmonic gap structure (SGS), described by an extended model of Octavio, Tinkham, Blonder and Klapwijk (OTBK), while at higher temperatures the SGS vanishes and an SN-like behaviour can be observed.

  20. Optical monitoring of CH3NH3PbI3 thin films upon atmospheric exposure

    International Nuclear Information System (INIS)

    Ghimire, Kiran; Zhao, Dewei; Cimaroli, Alex; Ke, Weijun; Yan, Yanfa; Podraza, Nikolas J

    2016-01-01

    CH 3 NH 3 PbI 3 perovskite films of interest for photovoltaic (PV) devices have been prepared by (i) vapor deposition and (ii) solution processing. Complex dielectric function ( ε   =   ε 1   +  i ε 2 ) spectra and structural parameters of the films have been extracted using near infrared to ultraviolet spectroscopic ellipsometry. In situ real time spectroscopic ellipsometry (RTSE) over a 48 h period has been performed on vapor deposited CH 3 NH 3 PbI 3 after the deposition in normal atmospheric laboratory ambient conditions. Analysis of RTSE data for vapor deposited CH 3 NH 3 PbI 3 film prepared under un-optimized conditions identifies phase segregated PbI 2 and CH 3 NH 3 I at the substrate/film interface and unreacted PbI 2 and CH 3 NH 3 I on the film surface. This analysis also provides the time dependence of the effective thicknesses of perovskite film, unreacted components, and phase segregated layers to track CH 3 NH 3 PbI 3 decomposition. (paper)

  1. Study of Exciton Hopping Transport in PbS Colloidal Quantum Dot Thin Films Using Frequency- and Temperature-Scanned Photocarrier Radiometry

    Science.gov (United States)

    Hu, Lilei; Mandelis, Andreas; Melnikov, Alexander; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H.

    2017-01-01

    Solution-processed colloidal quantum dots (CQDs) are promising materials for realizing low-cost, large-area, and flexible photovoltaic devices. The study of charge carrier transport in quantum dot solids is essential for understanding energy conversion mechanisms. Recently, solution-processed two-layer oleic-acid-capped PbS CQD solar cells with one layer treated with tetrabutylammonium iodide (TBAI) serving as the main light-absorbing layer and the other treated with 1,2-ethanedithiol (EDT) acting as an electron-blocking/hole-extraction layer were reported. These solar cells demonstrated a significant improvement in power conversion efficiency of 8.55% and long-term air stability. Coupled with photocarrier radiometry measurements, this work used a new trap-state mediated exciton hopping transport model, specifically for CQD thin films, to unveil and quantify exciton transport mechanisms through the extraction of hopping transport parameters including exciton lifetimes, hopping diffusivity, exciton detrapping time, and trap-state density. It is shown that PbS-TBAI has higher trap-state density than PbS-EDT that results in higher PbS-EDT exciton lifetimes. Hopping diffusivities of both CQD thin film types show similar temperature dependence, particularly higher temperatures yield higher hopping diffusivity. The higher diffusivity of PbS-TBAI compared with PbS-EDT indicates that PbS-TBAI is a much better photovoltaic material than PbS-EDT. Furthermore, PCR temperature spectra and deep-level photothermal spectroscopy provided additional insights to CQD surface trap states: PbS-TBAI thin films exhibit a single dominant trap level, while PbS-EDT films with lower trap-state densities show multiple trap levels.

  2. Piezoelectric characterization of Pb(Zr,Ti)O3 thin films deposited on metal foil substrates by dip coating

    Science.gov (United States)

    Hida, Hirotaka; Hamamura, Tomohiro; Nishi, Takahito; Tan, Goon; Umegaki, Toshihito; Kanno, Isaku

    2017-10-01

    We fabricated the piezoelectric bimorphs composed of Pb(Zr,Ti)O3 (PZT) thin films on metal foil substrates. To efficiently inexpensively manufacture piezoelectric bimorphs with high flexibility, 1.2-µm-thick PZT thin films were directly deposited on both surfaces of 10- and 20-µm-thick bare stainless-steel (SS) foil substrates by dip coating with a sol-gel solution. We confirmed that the PZT thin films deposited on the SS foil substrates at 500 °C or above have polycrystalline perovskite structures and the measured relative dielectric constant and dielectric loss were 323-420 and 0.12-0.17, respectively. The PZT bimorphs were demonstrated by comparing the displacements of the cantilever specimens driven by single- and double-side PZT thin films on the SS foil substrates under the same applied voltage. We characterized the piezoelectric properties of the PZT bimorphs and the calculated their piezoelectric coefficient |e 31,f| to be 0.3-0.7 C/m2.

  3. Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

    Science.gov (United States)

    Nguyen, Minh D.; Dekkers, Matthijn; Houwman, Evert; Steenwelle, Ruud; Wan, Xin; Roelofs, Andreas; Schmitz-Kempen, Thorsten; Rijnders, Guus

    2011-12-01

    A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector.

  4. The role of cationic precursors in structural, morphological and optical properties of PbS thin films

    International Nuclear Information System (INIS)

    Preetha, K C; Murali, K V; Ragina, A J; Deepa, K; Dhanya, A C; Remadevi, T L

    2013-01-01

    Thin films of Lead sulphide (PbS) were grown on soda lime glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method using lead acetate, lead chloride, lead nitrate, and lead sulphate as cationic precursors and thioacetamide as sulphur source. The experiments were carried out at room temperature under normal pressure utilizing aqueous conditions. The structural and morphological aspects of the as prepared samples were investigated by means of XRD and SEM results. The prepared samples were polycrystalline with nanometer-sized grains and identified as galena type cubic structure (FCC). The values of average crystallite size were found to be in the range 22 to 30 nm. The SEM micrographs show variations in morphology. Optical studies revealed that the absorption edges of the films indicated strong blue shifts with respect to bulk sample. In this work, we establish that the cationic precursor sources and in turn the size of the crystallites affects the structural, morphological and optical properties of PbS thin films.

  5. Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

    Science.gov (United States)

    Ortega, N.; Kumar, Ashok; Katiyar, R. S.

    2008-10-01

    We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

  6. Highly crystalline p-PbS thin films with tunable optical and hole transport parameters by chemical bath deposition

    International Nuclear Information System (INIS)

    Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

    2017-01-01

    Lead sulfide (PbS) thin films, consisting of well faceted (up to 400 nm) cubic-nanocrystals and possessing significantly improved opto-electronic parameters essential for photovoltaic applications, are grown by utilizing chemical bath deposition (CBD) technique with bath concentrations of 10–200 mM. X-ray diffraction (XRD) and Raman studies confirm the highly crystalline and pure phase of PbS. FESEM and HRTEM studies show that all the films possess uniform and compact (111) oriented nanocubic morphology. Bath concentration change provides tunability of nanocube size from 100 to 400 nm and the direct optical band gap from 1.50 to 0.94 eV. The PbS films exhibit p-type semiconducting behavior with hitherto unreported concurrent highest mobility of 29.3 cm"2V"−"1s"−"1 and high carrier concentration of ∼10"1"8 cm"−"3 with the lowest room temperature resistivity of 0.26 Ω–cm. The 25 mM and 10 mM films show significant surface plasmon absorption in 1200–2400 nm range making them suitable as efficient infrared absorbers in excitonic and multi-junction solar cells.

  7. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  8. Stability and Performance of CsPbI2Br Thin Films and Solar Cell Devices.

    Science.gov (United States)

    Mariotti, Silvia; Hutter, Oliver S; Phillips, Laurie J; Yates, Peter J; Kundu, Biswajit; Durose, Ken

    2018-01-31

    In this manuscript, the inorganic perovskite CsPbI 2 Br is investigated as a photovoltaic material that offers higher stability than the organic-inorganic hybrid perovskite materials. It is demonstrated that CsPbI 2 Br does not irreversibly degrade to its component salts as in the case of methylammonium lead iodide but instead is induced (by water vapor) to transform from its metastable brown cubic (1.92 eV band gap) phase to a yellow phase having a higher band gap (2.85 eV). This is easily reversed by heating to 350 °C in a dry environment. Similarly, exposure of unencapsulated photovoltaic devices to water vapor causes current (J SC ) loss as the absorber transforms to its more transparent (yellow) form, but this is also reversible by moderate heating, with over 100% recovery of the original device performance. NMR and thermal analysis show that the high band gap yellow phase does not contain detectable levels of water, implying that water induces the transformation but is not incorporated as a major component. Performances of devices with best efficiencies of 9.08% (V OC = 1.05 V, J SC = 12.7 mA cm -2 and FF = 68.4%) using a device structure comprising glass/ITO/c-TiO 2 /CsPbI 2 Br/Spiro-OMeTAD/Au are presented, and further results demonstrating the dependence of the performance on the preparation temperature of the solution processed CsPbI 2 Br films are shown. We conclude that encapsulation of CsPbI 2 Br to exclude water vapor should be sufficient to stabilize the cubic brown phase, making the material of interest for use in practical PV devices.

  9. Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells.

    Science.gov (United States)

    Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

    2015-09-23

    Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

  10. Improvement of CH3NH3PbI3 thin film using the additive 1,8-diiodooctane for planar heterojunction perovskite cells

    Science.gov (United States)

    Abdulrahman, Solh; Wang, Chunhua; Cao, Chenghao; Zhang, Chujun; Yang, Junliang; Jiang, Li

    2017-10-01

    The thin-film quality is critical for obtaining high-performance perovskite solar cells (PSCs). The additive 1,8-diiodooctane (DIO) was used to control the morphology and structure of CH3NH3PbI3 perovskite thin films, and planar heterojunction (PHJ) PSCs with an architecture of ITO/PEDOT: PSS/CH3NH3PbI3/PCBM/Al was fabricated. It was found that the DIO played an important role on CH3NH3PbI3 thin-film quality and the performance of PHJ-PSCs. With the optimal volume ratio of 2%, the compact and uniform high-quality CH3NH3PbI3 thin films with enhanced crystallinity and less roughness were achieved, resulting in the great improvement of power conversion efficiency (PCE) from about 4.5% to over 9.0%. The research results indicate that the additive DIO is a simple and effective method to produce high-quality perovskite thin film and accordingly develop high-performance PHJ-PSCs.

  11. Epitaxial growth and structural characterization of Pb(Fe1/2Nb1/2)O3 thin films

    International Nuclear Information System (INIS)

    Peng, W.; Lemee, N.; Holc, J.; Kosec, M.; Blinc, R.; Karkut, M.G.

    2009-01-01

    We have grown lead iron niobate thin films with composition Pb(Fe 1/2 Nb 1/2 )O 3 (PFN) on (0 0 1) SrTiO 3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar thermodynamic stability spaces, a pyrochlore phase often coexists with the PFN perovskite phase. By optimizing the kinetic parameters, we succeeded in identifying a deposition window which resulted in epitaxial perovskite-phase PFN thin films with no identifiable trace of impurity phases appearing in the X-ray diffractograms. PFN films having thicknesses between 20 and 200 nm were smooth and epitaxially oriented with the substrate and as demonstrated by RHEED streaks which were aligned with the substrate axes. X-ray diffraction showed that the films were completely c-axis oriented and of excellent crystalline quality with low mosaicity (X-ray rocking curve FWHM≤0.09 deg.). The surface roughness of thin films was also investigated by atomic force microscopy. The root-mean-square roughness varies between 0.9 nm for 50-nm-thick films to 16 nm for 100-nm-thick films. We also observe a correlation between grain size, surface roughness and film thickness.

  12. Preparation of planar CH3NH3PbI3 thin films with controlled size using 1-ethyl-2-pyrrolidone as solvent

    International Nuclear Information System (INIS)

    Hao, Qiuyan; Chu, Yixia; Zheng, Xuerong; Liu, Zhenya; Liang, Liming; Qi, Jiakun; Zhang, Xin; Liu, Gang; Liu, Hui; Chen, Hongjian; Liu, Caichi

    2016-01-01

    Recently, planar perovskite solar cells based on CH 3 NH 3 PbI 3 have attracted many researcher's interest due to their unique advantages such as simple cell architecture, easy fabrication and potential multijunction construction comparing to the initial mesoporous structure. However, the preparation of planar perovskite films with high quality is still in challenge. In this paper, we developed a vapor-assisted solution process using a novel and green solvent of 1-Ethyl-2-pyrrolidone (NEP) instead of the traditional N, N-dimethylformamide (DMF) to construct a high-quality perovskite CH 3 NH 3 PbI 3 thin film with pure phase, high compactness, small surface roughness and controlled size. The phase evolution and growth mechanism of the perovskite films are also discussed. Utilizing the NEP of low volatility and moderate boiling point as solvent, we dried the PbI 2 -NEP precursor films at different temperature under vacuum and then obtained PbI 2 thin films with different crystalline degree from amorphous to highly crystalline. The perovskite films with crystal size ranged from hundreds of nanometers to several micrometers can be prepared by reacting the PbI 2 films of different crystalline degree with CH 3 NH 3 I vapor. Moreover, planar-structured solar cells combining the perovskite film with TiO 2 and spiro-OMeTAD as the electron and holes transporting layer achieves a power conversion efficiency of 10.2%. - Highlights: • A novel and green solvent of 1-Ethyl-2-pyrrolidone (NEP) was used to construct high-quality perovskite CH 3 NH 3 PbI 3 thin film. • The CH 3 NH 3 PbI 3 grain with different sizes ranged from hundreds of nanometers to several micrometers can be obtained. • Planar-structured perovskite CH 3 NH 3 PbI 3 solar cells using NEP as solvent achieves a power conversion efficiency of 10.2%.

  13. Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Hara, Yujiro; Suzuki, Kouji

    2000-09-01

    Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glass substrates widely used in liquid crystal display (LCD) devices, by plasma-assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device processing. No mutual diffusion of the elements was recognized between the glass substrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was crystalline. PZT thin films on a glass substrate had leakage current densities of about 10-8 A/cm2, acceptable hysteresis loop shapes with the remanent polarization (Pr) of 45 μC/cm2 and the coercive field (Ec) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with those on a Si-based substrate.

  14. Piezoelectric evaluation of ion beam etched Pb(Zr,Ti)O3 thin films by piezoresponse force microscopy

    International Nuclear Information System (INIS)

    Legrand, C.; Da Costa, A.; Desfeux, R.; Soyer, C.; Remiens, D.

    2007-01-01

    The evolution of piezoelectric properties of Pb(Zr,Ti)O 3 (PZT) thin films after ion beam etching have been investigated at the nanoscale level by piezoelectric force microscopy. A comparison of the piezoelectric properties on etched and unetched films is realized. Piezoelectric contrasts imaging evidences a modification of the domain architecture at the film surface. Local piezoelectric hysteresis loops measurements on grains indicate that the coercive voltage for switching is much higher for the etched films (2.3 V) compared to the unetched ones (1.0 V) while the average piezoelectric activity is slightly lower. The results are explained in terms of grain-damaging during etching and domain-wall pinning

  15. Oscillator strength and quantum-confined Stark effect of excitons in a thin PbS quantum disk

    Science.gov (United States)

    Oukerroum, A.; El-Yadri, M.; El Aouami, A.; Feddi, E.; Dujardin, F.; Duque, C. A.; Sadoqi, M.; Long, G.

    2018-01-01

    In this paper, we report a study of the effect of a lateral electric field on a quantum-confined exciton in a thin PbS quantum disk. Our approach was performed in the framework of the effective mass theory and adiabatic approximation. The ground state energy and the stark shift were determined by using a variational method with an adequate trial wavefunction, by investigating a 2D oscillator strength under simultaneous consideration of the geometrical confinement and the electric field strength. Our results showed a strong dependence of the exciton binding and the Stark shift on the disk dimensions in both axial and longitudinal directions. On the other hand, our results also showed that the Stark shift’s dependence on the electric field is not purely quadratic but the linear contribution is also important and cannot be neglected, especially when the confinement gets weaker.

  16. Nanoscale semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin Shaoxiong; Zhang Xin; Shi Xuezhao; Wei Jinping; Lu Daban; Zhang Yuzhen; Kou Huanhuan [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Wang Chunming, E-mail: wangcm@lzu.edu.cn [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2011-04-15

    In this paper the fabrication and characterization of IV-VI semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn ...), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb{sub 1-x}Sn{sub x}Se is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

  17. Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

    NARCIS (Netherlands)

    Wan, X.; Houwman, Evert Pieter; Steenwelle, Ruud Johannes Antonius; van Schaijk, R.; Nguyen, Duc Minh; Dekkers, Jan M.; Rijnders, Augustinus J.H.M.

    2014-01-01

    Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti

  18. Voltage-controlled ferroelastic switching in Pb(Zr.sub.0.2./sub.Ti.sub.0.8./sub.)O.sub.3./sub. thin films

    Czech Academy of Sciences Publication Activity Database

    Khan, A.I.; Martí, Xavier; Serrao, C.; Ramesh, R.; Salahuddin, S.

    2015-01-01

    Roč. 15, č. 4 (2015), s. 2229-2234 ISSN 1530-6984 Institutional support: RVO:68378271 Keywords : nanodomains * ferroelastic switching * ferroelectricity * Pb(Zr 0.2 Ti 0.8 )O 3 * thin film Subject RIV: BE - Theoretical Physics Impact factor: 13.779, year: 2015

  19. Photosensitive thin-film In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers: Fabrication and properties

    Energy Technology Data Exchange (ETDEWEB)

    Gremenok, V. F., E-mail: gremenok@ifttp.bas-net.by [Scientific-Practical Center of the National Academy of Sciences of Belarus State Scientific and Production Association (Belarus); Rud' , V. Yu., E-mail: rudvas.spb@gmail.com [St. Petersburg State Polytechnic University (Russian Federation); Rud' , Yu. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Bashkirov, S. A.; Ivanov, V. A. [Scientific-Practical Center of the National Academy of Sciences of Belarus State Scientific and Production Association (Belarus)

    2011-08-15

    Thin Pb{sub x}Sn{sub 1-x}S films are obtained by the 'hot-wall' method at substrate temperatures of 210-330 Degree-Sign C. The microstructure, composition, morphology, and electrical characteristics of films are investigated. On the basis of the obtained films, photosensitive In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers are fabricated for the first time. The photosensivity spectra of these structures are investigated, and the character of interband transitions and the band-gap values are determined from them. The conclusion is drawn that Pb{sub x}Sn{sub 1-x}S thin polycrystalline films may be used in solar-energy converters.

  20. Optical band gap energy and ur bach tail of CdS:Pb2+ thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chavez, M.; Juarez, H.; Pacio, M. [Universidad Autonoma de Puebla, Instituto de Ciencias, Centro de Investigacion en Dispositivos Semiconductores, Av. 14 Sur, Col. Jardines de San Manuel, Ciudad Universitaria, Puebla, Pue. (Mexico); Gutierrez, R.; Chaltel, L.; Zamora, M.; Portillo, O. [Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Laboratorio de Materiales, Apdo. Postal 1067, 72001 Puebla, Pue. (Mexico); Mathew, X., E-mail: osporti@yahoo.mx [UNAM, Instituto de Energias Renovables, Temixco, Morelos (Mexico)

    2016-11-01

    Pb S-doped CdS nano materials were successfully synthesized using chemical bath. Transmittance measurements were used to estimate the optical band gap energy. Tailing in the band gap was observed and found to obey Ur bach rule. The diffraction X-ray show that the size of crystallites is in the ∼33 nm to 12 nm range. The peaks belonging to primary phase are identified at 2θ = 26.5 degrees Celsius and 2θ = 26.00 degrees Celsius corresponding to CdS and Pb S respectively. Thus, a shift in maximum intensity peak from 2θ = 26.4 to 28.2 degrees Celsius is clear indication of possible transformation of cubic to hexagonal phase. Also peaks at 2θ = 13.57, 15.9 degrees Celsius correspond to lead perchlorate thiourea. The effects on films thickness and substrate doping on the band gap energy and the width on tail were investigated. Increasing doping give rise to a shift in optical absorption edge ∼0.4 eV. (Author)

  1. First-Principles Study of Superconductivity in Ultra- thin Pb Films

    Science.gov (United States)

    Noffsinger, Jesse; Cohen, Marvin L.

    2010-03-01

    Recently, superconductivity in ultrathin layered Pb has been confirmed in samples with as few as two atomic layers [S. Qin, J. Kim, Q. Niu, and C.-K. Shih, Science 2009]. Interestingly, the prototypical strong-coupling superconductor exhibits different Tc's for differing surface reconstructions in samples with only two monolayers. Additionally, Tc is seen to oscillate as the number of atomic layers is increased. Using first principles techniques based on Wannier functions, we analyze the electronic structure, lattice dynamics and electron-phonon coupling for varying thicknesses and surface reconstructions of layered Pb. We discuss results as they relate to superconductivity in the bulk, for which accurate calculations of superconducting properties can be compared to experiment [W. L. McMillan and J.M. Rowell, PRL 1965]. This work was supported by National Science Foundation Grant No. DMR07-05941, the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Computational resources have been provided by the Lawrencium computational cluster resource provided by the IT Division at the Lawrence Berkeley National Laboratory (Supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231)

  2. Thermoelectric PbTe thin film for superresolution optical data storage

    International Nuclear Information System (INIS)

    Lee, Hyun Seok; Cheong, Byung-ki; Lee, Taek Sung; Lee, Kyeong Seok; Kim, Won Mok; Lee, Jae Won; Cho, Sung Ho; Youl Huh, Joo

    2004-01-01

    To find its practical use in ultrahigh density optical data storage, superresolution (SR) technique needs a material that can render a high SR capability at no cost of durability against repeated readout and write. Thermoelectric materials appear to be promising candidates due to their capability of yielding phase-change-free thermo-optic changes. A feasibility study was carried out with PbTe for its large thermoelectric coefficient and high stability over a wide temperature range as a crystalline single phase. Under exposure to pulsed red light, the material was found to display positive, yet completely reversible changes of optical transmittance regardless of laser power, fulfilling basic requirements for SR readout and write. The material was also shown to have a high endurance against repeated static laser heating of up to 10 6 -10 7 cycles tested. A read only memory disk with a PbTe SR layer led to the carrier to noise ratio value of 47 dB at 3.5 mW for 0.25 μm pit; below the optical resolution limit (∼0.27 μm) of the tester

  3. Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O_3 Thin Films

    International Nuclear Information System (INIS)

    Jun Jiang; An-Quan Jiang

    2016-01-01

    The traditional imprint characterization of ferroelectric thin films estimates imprint time dependence of the mean coercive voltage of all domains from a polarization-voltage hysteresis loop, which shows a semilogarithmic time dependence above an initial imprint time of τ_0 > 1 μs at room temperature. Below τ_0, the imprint effect is believed to be weak. In consideration of region-by-region domain reversal under a rising pulsed voltage with ordered coercive voltages increasing from zero up to the maximum applied voltage during capacitor charging time, we can estimate the imprinted coercive voltage of each domain from domain switching current transient separately with imprint time as short as 20 ns. In disagreement with the previous observations, all imprinted coercive voltages for the domains in Pt/Pb(Zr_0_._4Ti_0_._6)O_3/Pt thin-film capacitors show step-like increases at two characteristic times of 300 ns and 0.27s. The imprint effect is surprisingly strong enough even at shortened time down to 20 ns without any evidence of weakening. (paper)

  4. Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers

    International Nuclear Information System (INIS)

    Takahara, Seiichi; Morimoto, Akiharu; Kawae, Takeshi; Kumeda, Minoru; Yamada, Satoru; Ohtsubo, Shigeru; Yonezawa, Yasuto

    2008-01-01

    Lead zirconate-titanate Pb(Zr,Ti)O 3 (PZT) capacitors with Pt bottom electrodes were prepared on MgO substrates by pulsed laser deposition (PLD) technique employing SrTiO 3 (STO) template layer. Perovskite PZT thin films are prepared via stoichiometric target using the ultra-thin STO template layers while it is quite difficult to obtain the perovskite PZT on Pt electrode via stoichiometric target in PLD process. The PZT capacitor prepared with the STO template layer showed good hysteresis and leakage current characteristics, and it showed an excellent fatigue resistance. The ultra-thin STO template layers were characterized by angle-resolved X-ray photoelectron spectroscopy measurement. The effect of the STO template layer is discussed based on the viewpoint of the perovskite nucleation and diffusion of Pb and O atoms

  5. Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr,TiO3 (PZT thin films

    Directory of Open Access Journals (Sweden)

    M. Mtebwa

    2014-12-01

    Full Text Available We report the qualitative study of the influence of both elastic compliances and higher order terms of Landau free energy potential on the phase diagram of Pb(Zr0.5Ti0.5O3 thin films by using a single domain Landau theory. Although the impact of elastic compliances and higher order terms of the Landau free energy potential on the phase diagram of ferroelectric thin films are known, the sensitivity of the phase diagram of PZT thin film on these parameters have not been reported. It is demonstrated that, while values of elastic compliances affect the positions of the phase boundaries including phase transition temperature of the cubic phase; higher order terms can potentially introduce an a1a2-phase previously predicted in PbTiO3 phase diagram.

  6. Conductivity of CH{sub 3}NH{sub 3}PbI{sub 3} thin film perovskite stored in ambient atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Gebremichael, Bizuneh, E-mail: bizunehme@gmail.com [Physics Department, Addis Ababa University, Addis Ababa, P.O. Box 1176 (Ethiopia); Alemu, Getachew [Physics Department, Addis Ababa University, Addis Ababa, P.O. Box 1176 (Ethiopia); Tessema Mola, Genene [School of Chemistry & Physics, University of KwaZulu-Nat al, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209 (South Africa)

    2017-06-01

    Time dependent conductivity loss in CH{sub 3}NH{sub 3}PbI{sub 3} thin film perovskite stored in ambient atmosphere were studied based on electrical and optical measurements. Recent investigations on thin film perovskite solar cell suggest that in the steady state operation of the device, the V{sub oc} is unchanged by continuous illumination of light. Rather the reduction in the power conversion efficiency is caused by significant reduction of the short circuit current (J{sub sc}). In this paper, the effect of light on the optical absorption and electrical conductivity of the CH{sub 3}NH{sub 3}PbI{sub 3} thin film which is deposited on a glass substrate is investigated. The temperature dependent conductivity measurements indicated that the dominant conduction mechanism in the film perovskite is electronic rather than ionic.

  7. Physical properties of nanostructured (PbSx(CuS1−x composite thin films grown by successive ionic layer adsorption and reaction method

    Directory of Open Access Journals (Sweden)

    A.U. Ubale

    2016-03-01

    Full Text Available Nanostructured ternary semiconducting (PbSx(CuS1−x thin films were grown on glass substrates by successive ionic layer adsorption and reaction (SILAR technique at room temperature. The structural, morphological and optical characterizations of the films were carried out by X-ray diffraction, scanning electron microscopy and UV–Vis spectrophotometer respectively. The structural studies revealed that, (PbSx(CuS1−x films are nanocrystalline in nature and have mixed phase of cubic PbS and hexagonal CuS. The optical absorption measurements showed that band gap energy of (PbSx(CuS1−x can be engineered between 2.57 and 2.28 eV by varying compositional parameter ‘x’. The room temperature dc dark electrical resistivity of PbS film is found to be 28.85 Ωcm and it decreases when content of Cu in composite increases and becomes 0.05 Ωcm for pure CuS. The thermo-emf measurements showed that the as deposited (PbSx(CuS1−x films are of n-type. The water angle contact measurements of (PbSx(CuS1−x, revealed that, films are hydrophilic in nature and it could be advantageous in electrochemical application.

  8. The effect of dual complexing agents of lactic and citric acids on the formation of sol-gel derived Ag–PbTiO3 percolative thin film

    International Nuclear Information System (INIS)

    Su, Yanbo; Hu, Tao; Tang, Liwen; Weng, Wenjian; Han, Gaorong; Ma, Ning; Du, Piyi

    2014-01-01

    Controlling the formation of conductive particles to be nano-scale is important for achieving percolation effect in metal dispersed thin film composite to contribute extraordinary dielectric properties required for miniaturization of electronic devices. In this paper, lactic acid (LA) and citric acid (CA) were used as dual complexing agents to prepare a typical Ag nanoparticle dispersed PbTiO 3 (PTO) composite thin film by using a sol-gel method. The phase structure of the thin film and the coordination effect between complexing agent and metallic ions were investigated. It revealed that LA coordinated with Ti 4+ and Pb 2+ and CA coordinated with Ag + . Lead was fixed inside the gel network by LA and restricted to evaporate during heat treatment thus the pyrochlore phase was prevented from forming in the thin film. Ag + was coordinated by CA and the diffusion and thus aggregation of silver during gelation and annealing process were weakened. Silver nanoparticles dispersed in the PTO matrix formed with dual complexing agents of LA and CA introduced during the preparation process. The composite thin film of perfect perovskite phase with silver nanoparticles embedded was obtained at the molar ratio of LA/lead = 0.5 and CA/lead = 0.5. The dielectric constant of the thin film with silver nanoparticles is 5 times higher than that without silver nanoparticles. - Highlights: • Ag nanoparticle–PbTiO 3 percolative film with high dielectric property is prepared. • Evaporation of lead was prevented by coordinating Pb with lactic acid agent. • Dual complexing agents contribute block and pinning effects to form Ag nanoparticles

  9. Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

    Science.gov (United States)

    Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

    2017-11-01

    Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

  10. Polarization imprint effects on the photovoltaic effect in Pb(Zr,Ti)O3 thin films

    Science.gov (United States)

    Tan, Zhengwei; Tian, Junjiang; Fan, Zhen; Lu, Zengxing; Zhang, Luyong; Zheng, Dongfeng; Wang, Yadong; Chen, Deyang; Qin, Minghui; Zeng, Min; Lu, Xubing; Gao, Xingsen; Liu, Jun-Ming

    2018-04-01

    The polarization imprint along with the photovoltaic (PV) effect has been studied in Pt/Pb(Zr0.3Ti0.7)O3/SrRuO3 ferroelectric capacitors. It is shown that the positive DC poling induces the imprint with a downward direction whereas the negative DC poling suppresses the imprint (i.e., rejuvenation). In the polarization up state, the imprinted capacitor exhibits degraded PV properties compared with the rejuvenated one. This may be because the imprint reduces the number of upward domains, thus lowering the driving force for the PV effect. In the polarization down state, however, the rejuvenated capacitor enters the imprinted state spontaneously. This rejuvenation-to-imprint transition can be further aggravated by applying positive voltages and ultraviolet illumination. It is proposed that the domain pinning/depinning, which are associated with the oxygen vacancies and trapped electrons modulated by polarization, voltage, and illumination, may be responsible for the polarization imprint and rejuvenation. Our study therefore sheds light on the correlation between the polarization imprint and the PV effect in the ferroelectrics and also provides some viable suggestions to address the imprint-induced degradation of PV performance.

  11. Preparation, electrical and optical properties of evaporated thin films of CuPbI3

    International Nuclear Information System (INIS)

    Kuku, T.A.; Azi, S.O.

    1995-10-01

    Thin films of CuPbl 3 have been prepared by a vacuum evaporation process. X-ray analysis gives structural parameters in consonance with the bulk powder form of the material. The film however preferring a growth in the [002] direction. Electrical conductivity indicates an activated process with two activation energies being 0.45 eV for T ≤ 373 K, and 0.6 eV for T ≥ 373 K. Both are interpreted to be due to the transport of anionic carriers in the phases existing below and beyond 373 K respectively. Optical characterization reveals a material with high absorption coefficient, with α ≥ 10 4 cm -1 . The material is characterized by a direct absorption with the direct edge at 1.64 eV. (author). 13 refs, 5 figs

  12. Comparison of effective transverse piezoelectric coefficients e31,f of Pb(Zr,Ti)O3 thin films between direct and converse piezoelectric effects

    Science.gov (United States)

    Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku

    2015-10-01

    We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.

  13. Fatigue mechanism verified using photovoltaic properties of Pb(Zr0.52Ti0.48)O3 thin films

    Science.gov (United States)

    Wu, Ming; Li, Wei; Li, Junning; Wang, Shaolan; Li, Yaqi; Peng, Biaolin; Huang, Haitao; Lou, Xiaojie

    2017-03-01

    The photovoltaic effect and its evolution during electrical fatigue in Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been investigated. It is found that the photovoltaic effect of the as-grown PZT thin film is highly affected by the asymmetric Schottky barriers, which can be tuned by applying an external electric field. During fatigue processes, both open-circuit voltage (Voc) and short-circuit current (Jsc) decrease considerably with the increase of the number of electrical cycles. This phenomenon could be ascribed to the degradation of the interfacial layer between the thin film and the electrode induced by highly energetic charge carriers injected from the electrode during bipolar cycling. Our work sheds light on the physical mechanism of both ferroelectric photovoltaics and polarization fatigue in thin-film ferroelectrics.

  14. Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Jian; Batra, Vaishali; Han, Hui; Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States); Pandey, Raghvendar K. [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)

    2015-09-15

    The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structure with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.

  15. AC susceptibility of thin Pb films in intermediate and mixed state

    Energy Technology Data Exchange (ETDEWEB)

    Janu, Zdenek, E-mail: janu@fzu.cz [Institute of Physics of the AS CR, v.v.i., Na Slovance 2, CZ-182 21 Prague 8 (Czech Republic); Svindrych, Zdenek [Institute of Physics of the AS CR, v.v.i., Na Slovance 2, CZ-182 21 Prague 8 (Czech Republic); Trunecek, Otakar [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, CZ-121 16 Prague 2 (Czech Republic); Kus, Peter; Plecenik, Andrej [Komenius University in Bratislava, Faculty of Mathematics, Physics, and Informatics, Mlynska dolina, 842 48 Bratislava 4 (Slovakia)

    2011-12-15

    Thickness dependent transition in AC susceptibility between intermediate and mixed state in type-I superconducting films. The temperature induced crossover between reversible and irreversible behavior was observed in the thicker film. The temperature dependence of the AC susceptibility in mixed state follows prediction of model based on Bean critical state. The temperature dependence of the harmonics of the complex AC susceptibility in the intermediate state is explained. Thin films of type I superconductors of a thickness comparable or less than a flux penetration length behave like type II superconductors in a mixed state. With decreasing film thickness normal domains carrying a magnetic flux get smaller with smaller number of flux quanta per domain and finally transform into single quantum flux lines, i.e. quantum vortices similar to those found in type II superconductors. We give an evidence of this behavior from the measurements of the nonlinear response of a total magnetic moment to an applied AC magnetic field, directly from the temperature dependence of an AC susceptibility.

  16. Influence of the Grain Size on the Properties of CH3NH3PbI3 Thin Films.

    Science.gov (United States)

    Shargaieva, Oleksandra; Lang, Felix; Rappich, Jörg; Dittrich, Thomas; Klaus, Manuela; Meixner, Matthias; Genzel, Christoph; Nickel, Norbert H

    2017-11-08

    Hybrid perovskites have already shown a huge success as an absorber in solar cells, resulting in the skyrocketing rise in the power conversion efficiency to more than η = 22%. Recently, it has been established that the crystal quality is one of the most important parameters to obtain devices with high efficiencies. However, the influence of the crystal quality on the material properties is not fully understood. Here, the influence of the morphology on electronic properties of CH 3 NH 3 PbI 3 thin films is investigated. Postannealing was used to vary the average grain size continuously from ≈150 to ≈1000 nm. Secondary grain growth is thermally activated with an activation energy of E a = 0.16 eV. The increase in the grain size leads to an enhancement of the photoluminescence, indicating an improvement in the material quality. According to surface photovoltage measurements, the charge-carrier transport length exhibits a linear increase with increasing grain size. The charge-carrier diffusion length is limited by grain boundaries. Moreover, an improved morphology leads to a drastic increase in power conversion efficiency of the devices.

  17. Three-State Ferroelastic Switching and Large Electromechanical Responses in PbTiO 3 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Damodaran, Anoop R. [Univ. of California, Berkeley, CA (United States); Pandya, Shishir [Univ. of California, Berkeley, CA (United States); Agar, Josh C. [Univ. of California, Berkeley, CA (United States); Cao, Ye [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vasudevan, Rama K. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Xu, Ruijuan [Univ. of California, Berkeley, CA (United States); Saremi, Sahar [Univ. of California, Berkeley, CA (United States); Li, Qian [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kim, Jieun [Univ. of California, Berkeley, CA (United States); McCarter, Margaret R. [Univ. of California, Berkeley, CA (United States); Dedon, Liv R. [Univ. of California, Berkeley, CA (United States); Angsten, Tom [Univ. of California, Berkeley, CA (United States); Balke, Nina [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jesse, Stephen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Asta, Mark [Univ. of California, Berkeley, CA (United States); Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Martin, Lane W. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2017-07-31

    Leveraging competition between energetically degenerate states to achieve large field-driven responses is a hallmark of functional materials, but routes to such competition are limited. Here, a new route to such effects involving domain-structure competition is demonstrated, which arises from straininduced spontaneous partitioning of PbTiO3 thin films into nearly energetically degenerate, hierarchical domain architectures of coexisting c/a and a1/a2 domain structures. Using band-excitation piezoresponse force microscopy, this study manipulates and acoustically detects a facile interconversion of different ferroelastic variants via a two-step, three-state ferroelastic switching process (out-of-plane polarized c+ → in-plane polarized a → out-of-plane polarized c- state), which is concomitant with large nonvolatile electromechanical strains (≈1.25%) and tunability of the local piezoresponse and elastic modulus (>23%). It is further demonstrated that deterministic, nonvolatile writing/erasure of large-area patterns of this electromechanical response is possible, thus showing a new pathway to improved function and properties.

  18. Direct observation of fatigue in epitaxially grown Pb(Zr,Ti)O3 thin films using second harmonic piezoresponse force microscopy

    Science.gov (United States)

    Murari, Nishit M.; Hong, Seungbum; Lee, Ho Nyung; Katiyar, Ram. S.

    2011-08-01

    Here, we present a direct observation of fatigue phenomena in epitaxially grown Pb(Zr0.2Ti0.8)O3 (PZT) thin films using second harmonic piezoresponse force microscopy (SH-PFM). We observed strong correlation between the SH-PFM amplitude and phase signals with the remnant piezoresponse at different switching cycles. The SH-PFM results indicate that the average fraction of switchable domains decreases globally and the phase delays of polarization switching differ locally. In addition, we found that the fatigue developed uniformly over the whole area without developing region-by-region suppression of switchable polarization as in polycrystalline PZT thin films.

  19. Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on si wafer prepared by fast cooling immediately after sputter deposition.

    Science.gov (United States)

    Yoshida, Shinya; Hanzawa, Hiroaki; Wasa, Kiyotaka; Esashi, Masayoshi; Tanaka, Shuji

    2014-09-01

    We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e(31,f) = ~-11 C/m(2), with remarkably small dielectric constants, ϵ(r) = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

  20. Characterization of Pb(Zr, Ti)O sub 3 thin films prepared by metal-organic chemical-vapor deposition using a solid delivery system

    CERN Document Server

    Shin, J C; Hwang, C S; Kim, H J; Lee, J M

    1999-01-01

    Pb(Zr, Ti)O sub 3 (PZT) thin films were deposited on Pt/SiO sub 2 /Si substrates by metal-organic chemical-vapor deposition technique using a solid delivery system to improve the reproducibility of the deposition. The self-regulation mechanism, controlling the Pb-content of the film, was observed to work above a substrate temperature of 620 .deg. C. Even with the self-regulation mechanism, PZT films having low leakage current were obtained only when the molar mixing ratio of the input precursors was 1<Pb/(Zr+Ti)<1.4. The leakage current mechanism of the Pt/PZT/Pt capacitor was Schottky emission with a barrier height of 1.36 eV.

  1. Optical studies on Zn-doped lead chalcogenide (PbSe){sub 100−x}Zn{sub x} thin films composed of nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ashraf, Md. Tanweer [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Salah, Numan A. [Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Rafat, M. [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi-25 (India); Khan, Zishan H., E-mail: zishan_hk@yahoo.co.in [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India)

    2016-08-01

    The effect of laser-Irradiation on the optical properties of Zn-doped PbSe thin films composed of nanoparticles has been studied. Scanning electron microscope (SEM) investigations suggest the formation of nanoparticles of average size of 50 nm for all the studied Zn compositions. XRD studies show that the as-prepared thin films are polycrystalline in nature. The formation of nanoparticles of Zn-doped PbSe has been confirmed by indexing the crystal planes as observed in the XRD spectra. The addition of Zn in (PbSe){sub 100−x}Zn{sub x} thin films result in the blue shift in photoluminescence spectra, this blue shift is associated with the narrowing of the band gap. Optical absorption measurements reveal a direct band gap for the present samples, which decreases on increasing the Zn content. The same trend has also been observed for the samples irradiated with laser. Further, the calculated values of Urbach energy are found to increase with the increase in Zn contents for the as-prepared as well as laser-irradiated samples. All the above observations agree well with the results of optical band gap and suggest that the decrease in band gap may be due to increase in band tails, defects and particle size. - Highlights: • Nanoparticles of Zn doped (PbSe){sub 100−x}Zn{sub x} lead chalcogenides have been synthesized. • Effect of laser irradiation on optical properties of (PbSe){sub 100−x}Zn{sub x} has been studied. • A blue shift in PL spectra is obtained on Zn incorporation.

  2. Preparation of planar CH{sub 3}NH{sub 3}PbI{sub 3} thin films with controlled size using 1-ethyl-2-pyrrolidone as solvent

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Qiuyan; Chu, Yixia [Engineering Laboratory of Functional Optoelectronic Crystalline Materials of Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China); Zheng, Xuerong [Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Liu, Zhenya; Liang, Liming [Engineering Laboratory of Functional Optoelectronic Crystalline Materials of Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China); Qi, Jiakun [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Xin [Engineering Laboratory of Functional Optoelectronic Crystalline Materials of Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China); Liu, Gang [School of Chemical Engineering, Hebei University of Technology, Tianjin 300132 (China); Liu, Hui, E-mail: liuhuihebut@163.com [Engineering Laboratory of Functional Optoelectronic Crystalline Materials of Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China); Chen, Hongjian [Engineering Laboratory of Functional Optoelectronic Crystalline Materials of Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China); Liu, Caichi, E-mail: ccliu@hebut.edu.cn [Engineering Laboratory of Functional Optoelectronic Crystalline Materials of Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China)

    2016-06-25

    Recently, planar perovskite solar cells based on CH{sub 3}NH{sub 3}PbI{sub 3} have attracted many researcher's interest due to their unique advantages such as simple cell architecture, easy fabrication and potential multijunction construction comparing to the initial mesoporous structure. However, the preparation of planar perovskite films with high quality is still in challenge. In this paper, we developed a vapor-assisted solution process using a novel and green solvent of 1-Ethyl-2-pyrrolidone (NEP) instead of the traditional N, N-dimethylformamide (DMF) to construct a high-quality perovskite CH{sub 3}NH{sub 3}PbI{sub 3} thin film with pure phase, high compactness, small surface roughness and controlled size. The phase evolution and growth mechanism of the perovskite films are also discussed. Utilizing the NEP of low volatility and moderate boiling point as solvent, we dried the PbI{sub 2}-NEP precursor films at different temperature under vacuum and then obtained PbI{sub 2} thin films with different crystalline degree from amorphous to highly crystalline. The perovskite films with crystal size ranged from hundreds of nanometers to several micrometers can be prepared by reacting the PbI{sub 2} films of different crystalline degree with CH{sub 3}NH{sub 3}I vapor. Moreover, planar-structured solar cells combining the perovskite film with TiO{sub 2} and spiro-OMeTAD as the electron and holes transporting layer achieves a power conversion efficiency of 10.2%. - Highlights: • A novel and green solvent of 1-Ethyl-2-pyrrolidone (NEP) was used to construct high-quality perovskite CH{sub 3}NH{sub 3}PbI{sub 3} thin film. • The CH{sub 3}NH{sub 3}PbI{sub 3} grain with different sizes ranged from hundreds of nanometers to several micrometers can be obtained. • Planar-structured perovskite CH{sub 3}NH{sub 3}PbI{sub 3} solar cells using NEP as solvent achieves a power conversion efficiency of 10.2%.

  3. Characterization of Pb(Zr, Ti)O3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes

    International Nuclear Information System (INIS)

    Lee, Hee-Chul; Lee, Won-Jong

    2002-01-01

    Structural and electrical characteristics of Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films deposited on various Ir-based electrodes (Ir, IrO 2 , and Pt/IrO 2 ) using electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. On the Ir electrode, stoichiometric PZT films with pure perovskite phase could be obtained over a very wide range of processing conditions. However, PZT films prepared on the IrO 2 electrode contain a large amount of PbO x phases and exhibited high Pb-excess composition. The deposition characteristics were dependent on the behavior of PbO molecules on the electrode surface. The PZT thin film capacitors prepared on the Ir bottom electrode showed different electrical properties depending on top electrode materials. The PZT capacitors with Ir, IrO 2 , and Pt top electrodes showed good leakage current characteristics, whereas those with the Ru top electrode showed a very high leakage current density. The PZT capacitor exhibited the best fatigue endurance with an IrO 2 top electrode. An Ir top electrode provided better fatigue endurance than a Pt top electrode. The PZT capacitor with an Ir-based electrode is thought to be attractive for the application to ferroelectric random access memory devices because of its wide processing window for a high-quality ferroelectric film and good polarization, fatigue, and leakage current characteristics

  4. Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

    International Nuclear Information System (INIS)

    Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit

    2017-01-01

    A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm"2 is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

  5. Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit [Sardar Vallabhbhai National Institute of Technology, Chemical Engineering Department, Surat, Gujarat (India)

    2017-08-15

    A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm{sup 2} is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

  6. Synthesis and Characterization of Pb(Zr𝟎.𝟓𝟑, Ti𝟎.𝟒𝟕)O𝟑-Pb(Nb𝟏/𝟑, Zn𝟐/𝟑)O𝟑 Thin Film Cantilevers for Energy Harvesting Applications

    KAUST Repository

    Fuentes-Fernandez, E. M. A.; Debray-Mechtaly, W.; Quevedo-Lopez, M. A.; Gnade, B.; Leon-Salguero, E.; Shah, P.; Alshareef, Husam N.

    2012-01-01

    A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47) Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ~300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.

  7. Role of dual-laser ablation in controlling the Pb depletion in epitaxial growth of Pb(Zr0.52Ti0.48)O3 thin films with enhanced surface quality and ferroelectric properties

    Science.gov (United States)

    Mukherjee, Devajyoti; Hyde, Robert; Mukherjee, Pritish; Srikanth, Hariharan; Witanachchi, Sarath

    2012-03-01

    Pb depletion in Pb(Zr0.52Ti0.48)O3 (PZT) thin films has remained as a major setback in the growth of defect-free PZT thin films by pulsed laser ablation techniques. At low excimer (KrF) laser fluences, the high volatility of Pb in PZT leads to non-congruent target ablation and, consequently, non-stoichiometric films, whereas, at high laser fluences, the inherent ejection of molten droplets from the target leads to particulate laden films, which is undesirable in heterostructure growth. To overcome these issues, a dual-laser ablation (PLDDL) process that combines an excimer (KrF) laser and CO2 laser pulses was used to grow epitaxial PZT films on SrTiO3 (100) and MgO (100) substrates. Intensified-charge-coupled-detector (ICCD) images and optical emission spectroscopy of the laser-ablated plumes in PLDDL revealed a broader angular expansion and enhanced excitation of the ablated species as compared to those for single-laser ablation (PLDSL). This led to the growth of particulate-free PZT films with higher Pb content, better crystallinity, and lower surface roughness as compared to those deposited using PLDSL. For FE measurements, PZT capacitors were fabricated in situ using the latticed-matched metallic oxide, La0.7Sr0.3MnO3, as the top and bottom electrodes. PZT films deposited using PLDDL exhibited enhanced polarization for all driving voltages as compared to those deposited using PLDSL. A highest remanent polarization (Pr) of ˜91 μC/cm2 and low coercive field of ˜40 kV/cm was recorded at 9 V driving voltage. Fatigue characterization revealed that PZT films deposited using PLDDL showed unchanging polarization, even after 109 switching cycles.

  8. Local hysteresis and grain size effect in Pb(Mg1/3Nb2/3)O3- PbTiO3 thin films

    Science.gov (United States)

    Shvartsman, V. V.; Emelyanov, A. Yu.; Kholkin, A. L.; Safari, A.

    2002-07-01

    The local piezoelectric properties of relaxor ferroelectric films of solid solutions 0.9Pb(Mg1/3Nb2/3)O3- 0.1PbTiO3 were investigated by scanning force microscopy (SFM) in a piezoelectric contact mode. The piezoelectric hysteresis loops were acquired in the interior of grains of different sizes. A clear correlation between the values of the effective piezoelectric coefficients, deff, and the size of the respective grains is observed. Small grains exhibit slim piezoelectric hysteresis loops with low remanent deff, whereas relatively strong piezoelectric activity is characteristic of larger grains. Part of the grains (approx20-25%) is strongly polarized without application of a dc field. The nature of both phenomena is discussed in terms of the internal bias field and grain size effects on the dynamics of nanopolar clusters.

  9. Tensile stress-dependent fracture behavior and its influences on photovoltaic characteristics in flexible PbS/CdS thin-film solar cells.

    Science.gov (United States)

    Lee, Seung Min; Yeon, Deuk Ho; Mohanty, Bhaskar Chandra; Cho, Yong Soo

    2015-03-04

    Tensile stress-dependent fracture behavior of flexible PbS/CdS heterojunction thin-film solar cells on indium tin oxide-coated polyethylene terephthalate (PET) substrates is investigated in terms of the variations of fracture parameters with applied strains and their influences on photovoltaic properties. The PbS absorber layer that exhibits only mechanical cracks within the applied strain range from ∼0.67 to 1.33% is prepared by chemical bath deposition at different temperatures of 50, 70, and 90 °C. The PbS thin films prepared at 50 °C demonstrate better mechanical resistance against the applied bending strain with the highest crack initiating bending strain of ∼1.14% and the lowest saturated crack density of 0.036 μm(-1). Photovoltaic properties of the cells depend on the deposition temperature and the level of applied tensile stress. The values of short-circuit current density and fill factor are dramatically reduced above a certain level of applied strain, while open-circuit voltage is nearly maintained. The dependency of photovoltaic properties on the progress of fractures is understood as related to the reduced fracture energy and toughness, which is limitedly controllable by microstructural features of the absorber layer.

  10. Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process

    Directory of Open Access Journals (Sweden)

    Claudia Renata Borges Miranda

    2004-12-01

    Full Text Available Porous silicon layers (PSL were produced by stain etching from a HF:HNO3 500:1 mixture with etching time varying in the range of 1 up to 10 min. The samples have presented nanometric porosity as a function of etching time, characteristic of heavily doped p type silicon. The residual stress and the correlation length of the layers were obtained through the analysis of the micro-Raman spectra using a phonon confinement model including a term to account for the amorphous phase. The residual compressive stress tends to increase as expected due to the contribution of smaller crystallites to be more representative as the etching time increases. PbTe thin films were electrodeposited on PSL from aqueous alkaline solutions of Pb(CH3COO2, disodium salt of ethylendiaminetetraacetic acid (EDTA and TeO2 by galvanostatic and potentiostatic method. It was also obtained nanostructured PbTe thin films with polycrystalline morphology evidenced by X-ray Diffraction (XRD spectra. Scanning Electron Microscopy (SEM analysis has demonstrated good films reproducibility with an average grain size of 100 nm.

  11. A study on dependence of the structural, optical and electrical properties of cadmium lead sulphide thin films on Cd/Pb ratio

    Energy Technology Data Exchange (ETDEWEB)

    Nair, Sinitha B., E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Abraham, Anitha, E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin film research Lab, U.C. College, Aluva, Kerala (India); Pradeep, B., E-mail: bp@cusat.ac.in [Solid State Physics Laboratory, Cochin University of science and Technology, Cochin (India); Shripathi, T., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com; Ganesan, V., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com [UGC-DAE CSR, Khandwa Road, Indore, 452001, Madhya Pradesh (India)

    2014-10-15

    Cadmium Lead Sulphide thin films with systematic variation in Cd/Pb ratio are prepared at 333K by CBD, adjusting the reagent-molarity, deposition time and pH. XRD exhibits crystalline-amorphous transition as Cd% exceeds Pb%. AFM shows agglomeration of crystallites of size ∼50±5 nm. EDAX assess the composition whereas XPS ascertains the ternary formation, with binding energies of Pb4f{sub 7/2} and 4f{sub 5/2}, Cd3d{sub 5/2} and 3d{sub 3/2} and S2p at 137.03, 141.606, 404.667, 412.133 and 160.218 eV respectively. The optical absorption spectra reveal the variance in the direct allowed band gaps, from 1.57eV to 2.42 eV as Cd/Pb ratio increases from 0.2 to 2.7, suggesting possibility of band gap engineering in the n-type films.

  12. A Diffusive Gradient-in-Thin-Film Technique for Evaluation of the Bioavailability of Cd in Soil Contaminated with Cd and Pb

    Directory of Open Access Journals (Sweden)

    Peifang Wang

    2016-06-01

    Full Text Available Management of heavy metal contamination requires accurate information about the distribution of bioavailable fractions, and about exchange between the solid and solution phases. In this study, we employed diffusive gradients in thin-films (DGT and traditional chemical extraction methods (soil solution, HOAc, EDTA, CaCl2, and NaOAc to determine the Cd bioavailability in Cd-contaminated soil with the addition of Pb. Two typical terrestrial species (wheat, Bainong AK58; maize, Zhengdan 958 were selected as the accumulation plants. The results showed that the added Pb may enhance the efficiency of Cd phytoextraction which is indicated by the increasing concentration of Cd accumulating in the plant tissues. The DGT-measured Cd concentrations and all the selected traditional extractants measured Cd concentrations all increased with increasing concentration of the addition Pb which were similar to the change trends of the accumulated Cd concentrations in plant tissues. Moreover, the Pearson regression coefficients between the different indicators obtained Cd concentrations and plants uptake Cd concentrations were further indicated significant correlations (p < 0.01. However, the values of Pearson regression coefficients showed the merits of DGT, CaCl2, and Csol over the other three methods. Consequently, the in situ measurement of DGT and the ex situ traditional methods could all reflect the inhibition effects between Cd and Pb. Due to the feature of dynamic measurements of DGT, it could be a robust tool to predict Cd bioavaiability in complex contaminated soil.

  13. A Diffusive Gradient-in-Thin-Film Technique for Evaluation of the Bioavailability of Cd in Soil Contaminated with Cd and Pb

    Science.gov (United States)

    Wang, Peifang; Wang, Teng; Yao, Yu; Wang, Chao; Liu, Cui; Yuan, Ye

    2016-01-01

    Management of heavy metal contamination requires accurate information about the distribution of bioavailable fractions, and about exchange between the solid and solution phases. In this study, we employed diffusive gradients in thin-films (DGT) and traditional chemical extraction methods (soil solution, HOAc, EDTA, CaCl2, and NaOAc) to determine the Cd bioavailability in Cd-contaminated soil with the addition of Pb. Two typical terrestrial species (wheat, Bainong AK58; maize, Zhengdan 958) were selected as the accumulation plants. The results showed that the added Pb may enhance the efficiency of Cd phytoextraction which is indicated by the increasing concentration of Cd accumulating in the plant tissues. The DGT-measured Cd concentrations and all the selected traditional extractants measured Cd concentrations all increased with increasing concentration of the addition Pb which were similar to the change trends of the accumulated Cd concentrations in plant tissues. Moreover, the Pearson regression coefficients between the different indicators obtained Cd concentrations and plants uptake Cd concentrations were further indicated significant correlations (p < 0.01). However, the values of Pearson regression coefficients showed the merits of DGT, CaCl2, and Csol over the other three methods. Consequently, the in situ measurement of DGT and the ex situ traditional methods could all reflect the inhibition effects between Cd and Pb. Due to the feature of dynamic measurements of DGT, it could be a robust tool to predict Cd bioavaiability in complex contaminated soil. PMID:27271644

  14. Polarization fatigue resistance of Ca-doped Pb(Zr0.52Ti0.48)O3 thin films prepared by the sol-gel method

    International Nuclear Information System (INIS)

    Wei, T.; Wang, Y.; Zhu, C.; Dong, X.W.; Xia, Y.D.; Zhu, J.S.; Liu, J.-M.

    2008-01-01

    The ferroelectric and polarization fatigue characteristics of Pb 1-x Ca x (Zr 0.52 Ti 0.48 )O 3 (PCZT) thin films prepared using the sol-gel method were studied. The Ca-doping slightly suppresses the ferroelectricity of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) because of the quantum paraelectric behavior of CaTiO 3 . Compared with PZT thin films, the PCZT (x=0.2) thin films show enhanced fatigue resistance at room temperature, further emphasized by the almost fatigue-free behavior at 100 K. The temperature-dependent dc-conductivity suggests a decrease of the oxygen vacancy density by almost 20 times and a slightly declined activation energy U for oxygen vacancies, upon increasing of the Ca-doping content from 0.0 to 0.2. It is argued that the improved fatigue endurance is ascribed to the decreasing density of oxygen vacancies due to the Ca-doping, although the lowered activation energy of oxygen vacancies is unfavorable. (orig.)

  15. Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

    KAUST Repository

    Fuentes-Fernandez, E. M A

    2010-11-18

    0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.

  16. Increasing the electrical anisotropy of solution-grown PbI2 thin films by addition of CdI2

    International Nuclear Information System (INIS)

    Ponpon, J.P.; Amann, M.

    2010-01-01

    In the present study up to 20% CdI 2 has been added to a lead iodide-water solution, which is used to grow PbI 2 polycrystalline thin films. As a result, a significant increase in the anisotropy of the lead iodide film's electrical properties has been observed: the resistivity in the direction parallel to the c-axis reached 10 15 Ω cm but did not change significantly in the orthogonal direction. This behavior can be explained by the modification of the transport properties related to the crystallographic structure of the films along the c-axis. As suggested by thermally stimulated current measurements, only a small number of the Cd atoms incorporated into the PbI 2 lattice could behave as dopants.

  17. Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO3 Thin Films

    OpenAIRE

    Wei XK; Vaideeswaran K; Sandu CS; Jia CL; Setter N

    2015-01-01

    Polar translational boundaries (PTBs) are preferentially created in antiferroelectric PbZrO3 films through interfacial engineering. Probe corrected scanning transmission electron microscopy studies reveal that RIII 1 and RI 1 type PTBs are favorably created in PbZrO3/BaZrO3/SrTiO3 and PbZrO3/SrTiO3 films respectively. The relationship between interfacial strain and the internal strain of boundaries is the driving force for the selective formation of PTBs.

  18. Soft electronic structure modulation of surface (thin-film) and bulk (ceramics) morphologies of TiO{sub 2}-host by Pb-implantation: XPS-and-DFT characterization

    Energy Technology Data Exchange (ETDEWEB)

    Zatsepin, D.A. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Boukhvalov, D.W., E-mail: danil@hanyang.ac.kr [Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Gavrilov, N.V. [Institute of Electrophysics, Russian Academy of Sciences, Ural Branch, 620990 Yekaterinburg (Russian Federation); Zatsepin, A.F. [Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Shur, V.Ya.; Esin, A.A. [Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, 620000 Yekaterinburg (Russian Federation); Kim, S.S. [School of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kurmaev, E.Z. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation)

    2017-04-01

    Highlights: • Experiment and theory demonstrate significant difference between patterns of Pb-ion implantation in TiO{sub 2}. • In bulk TiO{sub 2} Pb-impurities leads formation of PbO phase. • On the surface of TiO{sub 2}:Pb occur formation of PbxOy configurations. • In both bulk and surface TiO{sub 2}:Pb occur decreasing of the bandgap by shift of valence band about 1 eV up. - Abstract: The results of combined experimental and theoretical study of substitutional and clustering effects in the structure of Pb-doped TiO{sub 2}-hosts (bulk ceramics and thin-film morphologies) are presented. Pb-doping of the bulk and thin-film titanium dioxide was made with the help of pulsed ion-implantation without posterior tempering (Electronic Structure Modulation Mode). The X-ray photoelectron spectroscopy (XPS) qualification of core-levels and valence bands and Density-Functional Theory (DFT) calculations were employed in order to study the yielded electronic structure of Pb-ion modulated TiO{sub 2} host-matrices. The combined XPS-and-DFT analysis has agreed definitely with the scenario of the implantation stimulated appearance of PbO-like structures in the bulk morphology of TiO{sub 2}:Pb, whereas in thin-film morphology the PbO{sub 2}-like structure becomes dominating, essentially contributing weak O/Pb bonding (Pb{sub x}O{sub y} defect clusters). The crucial role of the oxygen hollow-type vacancies for the process of Pb-impurity “insertion” into the structure of bulk TiO{sub 2} was pointed out employing DFT-based theoretical background. Both experiment and theory established clearly the final electronic structure re-arrangement of the bulk and thin-film morphologies of TiO{sub 2} because of the Pb-modulated deformation and shift of the initial Valence Base-Band Width about 1 eV up.

  19. Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

    Science.gov (United States)

    Lee, J.; Esayan, S.; Prohaska, J.; Safari, A.

    1994-01-01

    The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 s) and slow (˜hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.

  20. Charge selective contact on ultra-thin In(OH)xS y/Pb(OH) xS y heterostructure prepared by SILAR

    International Nuclear Information System (INIS)

    Gavrilov, S.; Oja, I.; Lim, B.; Belaidi, A.; Bohne, W.; Strub, E.; Roehrich, J.; Lux-Steiner, M.-Ch.; Dittrich, Th.

    2006-01-01

    Ultra-thin In(OH) x S y /Pb(OH) x S y heterostructures were formed by the wet chemical SILAR (successive ion layer adsorption and reaction) technique. ERDA (elastic recoil detection analysis) was used for stoichiometry analysis. The heterocontacts were conditioned by joint annealing of the two layers at different low temperatures in air. The charge selectivity was demonstrated with various small area solar cell structures. The results are discussed on the base of formation of bonds between sulphide clusters and passivation of defects with hydrogen containing species in hydroxy-sulphides. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7O3 for multi-bit storage application

    Directory of Open Access Journals (Sweden)

    Lu Qian

    2011-01-01

    Full Text Available Abstract In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7O3 (PZT] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

  2. Tuning structure in epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} thin films by using miscut substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mietschke, M., E-mail: m.mietschke@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Dresden University of Technology, Faculty of Mechanical Science and Engineering, D-01062 Dresden (Germany); Oswald, S.; Fähler, S. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schultz, L. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Dresden University of Technology, Faculty of Mechanical Science and Engineering, D-01062 Dresden (Germany); Hühne, R. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany)

    2015-08-31

    Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} (PMN–PT) is one of the most promising ferroelectric material for actuator, dielectric and electrocaloric applications. However, oriented and phase pure thin films are essential to use the outstanding properties of these compounds. In this work it is demonstrated that the use of miscut substrates influences the growth mechanism leading to a significantly broader deposition window to achieve the required film quality. Therefore, epitaxial 0.68Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–0.32PbTiO{sub 3} films were grown by pulsed laser deposition on (001)-oriented single crystalline SrTiO{sub 3} (STO) substrates with a miscut angle between 0 and 15° towards the [100] direction using a conducting La{sub 0.7}Sr{sub 0.3}CoO{sub 3} buffer layer. The influence of the vicinal angle on the PMN–PT structure was studied by high resolution X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. A nearly pure perovskite phase growth with a cube-on-cube epitaxial relationship was obtained on all miscut STO substrates, whereas a significant volume fraction of the pyrochlore phase was present on the standard substrate. Reciprocal space measurements revealed a peak split of the perovskite reflections indicating structural variants of PMN–PT with different c/a ratios. An additional tilting of the PMN–PT planes with respect to the buffer layer was observed on some samples, which might be explained with the incorporation of dislocations according to the Nagai model. Polarization loops were measured in a temperature range between room temperature and 150 °C showing a sharp drop of the remanent polarization above 65 °C on vicinal substrates. - Highlights: • Epitaxial growth of pure perovskite Pb (Mg{sub 1}/{sub 3}Nb{sub 2}/{sub 3})O{sub 3}–PbTiO{sub 3} on miscut SrTiO{sub 3}. • Significant broadening of the deposition window for pyrochlore-free films. • Dependence of the structural parameters

  3. Antisolvent-assisted powder engineering for controlled growth of hybrid CH3NH3PbI3 perovskite thin films

    Directory of Open Access Journals (Sweden)

    Yong Chan Choi

    2017-02-01

    Full Text Available We develop antisolvent-assisted powder engineering for the controlled growth of hybrid inorganic-organic CH3NH3PbI3 (MAPbI3 perovskite thin films. The powders, which are used as the precursors for solution processing, are synthesized by pouring a MAPbI3 precursor solution into various antisolvents, such as dichloromethane, chloroform, diethyl ether, and toluene. Two types of powders having different colors are obtained, depending on the antisolvent used. The choice of the antisolvent used for synthesizing the powders strongly influences not only the phases of the powders but also the morphology and structure of the thin films subsequently fabricated by solution processing. This, in turn, affects the photovoltaic performance.

  4. Synthesis and characterization of Ba_0_._5Pb_0_._5TiO_3 perovskite - type thin films deposited by spin coating at low temperatures

    International Nuclear Information System (INIS)

    Wermuth, T.B.; Wiederkehr, N.A.; Alves, A.K.; Bergmann, C.P.

    2014-01-01

    In this paper we present a non-aqueous sol-gel route for the obtention of solid compounds and thin films of oxide type- perovskite ABO_3, such as Ba_0_._5 Pb_0_._5 TiO_3, synthesized by sol - gel route with subsequent heat treatment. The solid compounds were characterized by X-ray diffraction (XRD) techniques and thermal analysis (TGA / DTA). The thin film was obtained by using spin-coating techniques at low temperatures onto commercial substrates of polymethylmethacrylate (PMMA) and characterized by contact angle, atomic force microscopy (AFM) and scanning electron microscopy (SEM). The results show that the films present microstructures and roughness directly related to annealing temperatures, characterized by the formation of crystalline nanostructures with surface regularity and transparency. (author)

  5. Combination of short-length TiO_2 nanorod arrays and compact PbS quantum-dot thin films for efficient solid-state quantum-dot-sensitized solar cells

    International Nuclear Information System (INIS)

    Zhang, Zhengguo; Shi, Chengwu; Chen, Junjun; Xiao, Guannan; Li, Long

    2017-01-01

    Graphical abstract: The TiO_2 nanorod array with the length of 600 nm, the diameter of 20 nm, the areal density of 500 μm"−"2 was successfully prepared. The compact PbS quantum-dot thin film was firstly obtained on the TiO_2 nanorod array by spin-coating-assisted successive ionic layer absorption and reaction with using 1,2-ethanedithiol. The photoelectric conversion efficiency (PCE) of the compact PbS quantum-dot thin film sensitized solar cells achieved 4.10% using spiro-OMeTAD as a hole transporting layer, while the PCE of the PbS quantum-dot sensitized solar cells was only 0.54%. - Highlights: • Preparation of TiO_2 nanorod arrays with the length of 600 nm, diameter of 20 nm. • The compact PbS QD thin film and short-length TiO_2 nanorod array were combined. • EDT addition improved PbS nanoparticle coverage and photovoltaic performance. • The compact PbS QD thin film sensitized solar cell achieved the PCE of 4.10%. - Abstract: Considering the balance of the hole diffusion length and the loading quantity of quantum-dots, the rutile TiO_2 nanorod array with the length of 600 nm, the diameter of 20 nm, and the areal density of 500 μm"−"2 is successfully prepared by the hydrothermal method using the aqueous grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 °C for 105 min. The compact PbS quantum-dot thin film on the TiO_2 nanorod array is firstly obtained by the spin-coating-assisted successive ionic layer absorption and reaction with using 1,2-ethanedithiol (EDT). The result reveals that the strong interaction between lead and EDT is very important to control the crystallite size of PbS quantum-dots and obtain the compact PbS quantum-dot thin film on the TiO_2 nanorod array. The all solid-state sensitized solar cell with the combination of the short-length, high-density TiO_2 nanorod array and the compact PbS quantum-dot thin film achieves the photoelectric conversion efficiency of 4.10%, along with an open

  6. Combination of short-length TiO{sub 2} nanorod arrays and compact PbS quantum-dot thin films for efficient solid-state quantum-dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhengguo [School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009 (China); School of Chemistry and Chemical Engineering, Beifang University of Nationalities, Yinchuan 750021 (China); Shi, Chengwu, E-mail: shicw506@foxmail.com [School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009 (China); Chen, Junjun; Xiao, Guannan; Li, Long [School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009 (China)

    2017-07-15

    Graphical abstract: The TiO{sub 2} nanorod array with the length of 600 nm, the diameter of 20 nm, the areal density of 500 μm{sup −2} was successfully prepared. The compact PbS quantum-dot thin film was firstly obtained on the TiO{sub 2} nanorod array by spin-coating-assisted successive ionic layer absorption and reaction with using 1,2-ethanedithiol. The photoelectric conversion efficiency (PCE) of the compact PbS quantum-dot thin film sensitized solar cells achieved 4.10% using spiro-OMeTAD as a hole transporting layer, while the PCE of the PbS quantum-dot sensitized solar cells was only 0.54%. - Highlights: • Preparation of TiO{sub 2} nanorod arrays with the length of 600 nm, diameter of 20 nm. • The compact PbS QD thin film and short-length TiO{sub 2} nanorod array were combined. • EDT addition improved PbS nanoparticle coverage and photovoltaic performance. • The compact PbS QD thin film sensitized solar cell achieved the PCE of 4.10%. - Abstract: Considering the balance of the hole diffusion length and the loading quantity of quantum-dots, the rutile TiO{sub 2} nanorod array with the length of 600 nm, the diameter of 20 nm, and the areal density of 500 μm{sup −2} is successfully prepared by the hydrothermal method using the aqueous grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 °C for 105 min. The compact PbS quantum-dot thin film on the TiO{sub 2} nanorod array is firstly obtained by the spin-coating-assisted successive ionic layer absorption and reaction with using 1,2-ethanedithiol (EDT). The result reveals that the strong interaction between lead and EDT is very important to control the crystallite size of PbS quantum-dots and obtain the compact PbS quantum-dot thin film on the TiO{sub 2} nanorod array. The all solid-state sensitized solar cell with the combination of the short-length, high-density TiO{sub 2} nanorod array and the compact PbS quantum-dot thin film achieves the photoelectric conversion

  7. Crystallization behavior and domain structure in textured Pb(Zr0.52Ti0.48)O3 thin films by different annealing processes

    International Nuclear Information System (INIS)

    Huang, W.; Jiang, S.W.; Li, Y.R.; Zhu, J.; Zhang, Y.; Wei, X.H.; Zeng, H.Z.

    2006-01-01

    Amorphous Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films were prepared on the Pt/Ti/SiO 2 /Si substrates by radio-frequency magnetron sputtering at room temperature. After rapid thermal annealing (RTA) and conventional furnace annealing (CFA) at different temperatures, the films were transformed into polycrystalline PZT thin films with (111) and (100) orientation, respectively. The phase formation and ferroelectric domains correlated with different orientation were systematically investigated by X-ray diffraction and piezoresponse force microscopy. The results showed that the perovskite PZT crystal with [111] orientation hetero-nucleated preferentially on top of the PtPb intermetallic phase at the PZT/Pt interface during RTA process. It is of interest to find that the domain self-organized into a structure with rounded shape at the early stage of crystallization. While the nucleation of the films treated by CFA dominantly homo-nucleated, thus the (100) orientation grains with minimum surface energy were easy to grow. The texture effects on ferroelectric properties of PZT films were also discussed in relation to the domain structure

  8. The Effect of Substrate Temperature on the Structural Properties of Spray Pyrolysed Lead Sulphide (PbS Thin Films

    Directory of Open Access Journals (Sweden)

    Mohammad G. Faraj

    2014-09-01

    Full Text Available Lead sulphide (PbS films were prepared by the chemical spray pyrolysis technique using a solution of Lead nitrate and thiourea. PbS films were deposited (prepared on glass substrate at varied temperature (250-350 oC. Effects of substrate temperature on the structural characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure. The X-ray diffraction study showed that irrespective of substrate temperature all the films exhibits a preferred orientation along the (200 plane. The degree of preferred orientation increased with the substrate temperature. It was observed that the increase of the substrate temperature increase the diffraction peak intensity of (200 plane which resulted in increase in grain size and good crystallinity of the films.

  9. Structure-property relations in sputter deposited epitaxial (1-x)Pb(Mg1/3Nb2/3)O3- xPbTiO3 thin films

    Science.gov (United States)

    Frederick, Joshua C.

    Lead-based ferroelectric materials are of significant technological importance for sensing and actuation due to their high piezoelectric performance (i.e., the ability to convert an electrical signal to mechanical displacement, and vice versa). Traditionally, bulk ceramic or single crystals materials have filled these roles; however, emerging technologies stand to benefit by incorporating thin films to achieve miniaturization while maintaining high efficiency and sensitivity. Currently, chemical systems that have been well characterized in bulk form (e.g. Pb(Mg1/3Nb2/3)O3- xPbTiO3, or PMN-xPT) require further study to optimize both the chemistry and structure for deployment in thin film devices. Furthermore, the effect of internal electric fields is more significant at the length scales of thin films, resulting in self biases that require compensation to reveal their intrinsic dielectric response. To this end, the structure-property relations of epitaxial PMN-xPT films sputter deposited on a variety of substrates were investigated. Attention was paid to how the structure (i.e., strain state, crystal structure, domain configuration, and defects) gave rise to the ferroelectric, dielectric, and piezoelectric response. Three-dimensional visualization of the dielectric response as a simultaneous function of electric field and temperature revealed the true phase transition of the films, which was found to correspond to the strain state and defect concentration. A lead-buffered anneal process was implemented to enhance the ferroelectric and dielectric response of the films without altering their stoichiometry. It was discovered that PMN- xPT films could be domain-engineered to exhibit a mixed domain state through chemistry and substrate choice. Such films exhibited a monoclinic distortion similar to that of the bulk compositions near the morphotropic phase boundary. Finally, it was revealed that the piezoelectric response could be greatly enhanced by declamping the film

  10. Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

    2012-08-15

    Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

  11. Mixed Valence Perovskite Cs2 Au2 I6 : A Potential Material for Thin-Film Pb-Free Photovoltaic Cells with Ultrahigh Efficiency.

    Science.gov (United States)

    Debbichi, Lamjed; Lee, Songju; Cho, Hyunyoung; Rappe, Andrew M; Hong, Ki-Ha; Jang, Min Seok; Kim, Hyungjun

    2018-03-01

    New light is shed on the previously known perovskite material, Cs 2 Au 2 I 6 , as a potential active material for high-efficiency thin-film Pb-free photovoltaic cells. First-principles calculations demonstrate that Cs 2 Au 2 I 6 has an optimal band gap that is close to the Shockley-Queisser value. The band gap size is governed by intermediate band formation. Charge disproportionation on Au makes Cs 2 Au 2 I 6 a double-perovskite material, although it is stoichiometrically a single perovskite. In contrast to most previously discussed double perovskites, Cs 2 Au 2 I 6 has a direct-band-gap feature, and optical simulation predicts that a very thin layer of active material is sufficient to achieve a high photoconversion efficiency using a polycrystalline film layer. The already confirmed synthesizability of this material, coupled with the state-of-the-art multiscale simulations connecting from the material to the device, strongly suggests that Cs 2 Au 2 I 6 will serve as the active material in highly efficient, nontoxic, and thin-film perovskite solar cells in the very near future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of Pb(ZrxTi1-x)O3 thin films

    International Nuclear Information System (INIS)

    Gong Wen; Li Jingfeng; Chu Xiangcheng; Gui Zhilun; Li Longtu

    2004-01-01

    Lead zirconate titanate [Pb(Zr x Ti 1-x )O 3 , PZT] thin films with various compositions, whose Zr/Ti ratio were varied as 40/60, 48/52, 47/53, and 60/40, were deposited on Pt(111)/Ti/SiO 2 /Si substrates by sol-gel method. A seeding layer was introduced between the PZT layer and the bottom electrode to control the texture of overlaid PZT thin films. A single perovskite PZT thin film with absolute (100) texture was obtained, when lead oxide was used as the seeding crystal, whereas titanium dioxide resulted in highly [111]-oriented PZT films. The dielectric and ferroelectric properties of PZT films with different preferential orientations were evaluated systemically as a function of composition. The maximums of relative dielectric constant were obtained in the morphotropic phase boundary region for both (100)- and (111)-textured PZT films. The ferroelectric properties also greatly depend on films' texture and composition. The intrinsic and extrinsic contributions to dielectric and ferroelectric properties were discussed

  13. Photoinduced changes in the fatigue behavior of SrBi2Ta2O9 and Pb(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Dimos, D.; Al-Shareef, H.N.; Warren, W.L.; Tuttle, B.A.

    1996-01-01

    It is shown that SrBi 2 Ta 2 O 9 (SBT) thin films can be made to exhibit significant polarization fatigue by electric-field cycling under broad-band, optical illumination. Photoinduced fatigue is also observed for Pb(Zr,Ti)O 3 (PZT) thin-film capacitors with (La,Sr)CoO 3 (LSCO) electrodes. These results demonstrate that both the Pt/SBT/Pt and the LSCO/PZT/LSCO systems are susceptible to fatigue effects, which are attributed primarily to pinning of domain walls due to charge trapping. Capacitors that have been fatigued under illumination can be fully rejuvinated by applying a dc saturating bias with light or by electric-field cycling without light, which indicates an intrinsic, field-assisted recovery mechanism. We suggest that fatigue is essentially a competition between domain wall pinning and unpinning and that domain pinning is not necessarily absent in these nominally fatigue-free systems, but rather these systems are ones in which unpinning occurs at least as rapidly as any pinning. In both cases, the extent of photoinduced fatigue decreases with increased cycling voltage, indicating the relative importance of field-assisted unpinning. Finally, the observation of photoinduced fatigue implies that increased injection rates, potentially due to oxygen vacancy accumulation, may account for the electrode dependence on fatigue in PZT thin films

  14. Engineering Nanoscale Multiferroic Composites for Memory Applications with Atomic Layer Deposition of Pb(ZrxTi1-x)O3 Thin Films

    Science.gov (United States)

    Chien, Diana

    This work focuses on the development of atomic layer deposition (ALD) for lead zirconate titanate, Pb(ZrxTi1-x)O 3 (PZT). Leveraging the surface-reaction controlled process based on alternating self-limiting surface reactions, PZT can be synthesized not only with elemental precision to realize the desired composition (Zr/Ti = 52/48) but also with outstanding conformality. The latter enables the integration of PZT with a ferromagnetic phase to realize multiferroism (MF) and magnetoelectric (ME) effect. Since PZT is one of the best known ferroelectric and piezoelectric materials due the large displacements of the Pb ions at the morphotropic phase boundary, PZT based MF composites could lead to stronger ME coupling through strain coupling at the interface. Specifically, ALD PZT thin films were synthesized by using beta-diketonate metalorganic precursors Pb(TMHD)2, Zr(TMHD)4, and Ti(O.i-Pr) 2(TMHD)2 and H2O. The number of local cycles and global cycles were regulated to achieve the desired stoichiometry and thickness, respectively. ALD of PZT was studied to obtain (100) textured PZT on Pt (111) oriented platinized silicon substrates. In order to attain a highly oriented PZT thin film, a (100) textured PbTiO3 seed layer was required because PZT orientation is governed by nucleation. MF nanocomposites were engineered using ALD PZT thin films to achieve controlled complex nanoscale structures, enabling porosity to be studied as a new additional parameter for nanocomposite architectures to enhance ME effect. Specifically, 3--6 nm-thick ALD PZT thin films were deposited to uniformly coat the walls of mesoporous cobalt ferrite (CFO) template. The PZT/CFO nanocomposites were electrically poled ex-situ and the change in magnetic moment was measured. The inverse magnetoelectric coupling coefficient, a, was determined to be 85.6 Oe-cm/mV. The in-plane results show no significant change in magnetization (1--4%) as a function of electric field, which was expected due to the effect

  15. Etch characteristics of (Pb,Sr)TiO3 thin films using CF4/Ar inductively coupled plasma

    International Nuclear Information System (INIS)

    Kim, Gwan-Ha; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2003-01-01

    The investigations of the (Pb,Sr)TiO 3 (PST) etching characteristics in CF 4 /Ar plasma were carried out using the inductively coupled plasma system. Experiments showed that an increase of the Ar mixing ratio under constant pressure and input power conditions leads to increasing etch rate of PST, which reaches a maximum of 740 A/min when the Ar is 80% of the gas mixture. To understand the etching mechanism, the surface state of the etched PST samples was investigated using x-ray photoelectron spectroscopy. It was found that Pb and Ti atoms were removed mainly by the ion-assisted etching mechanism. At the same time, Sr forms extremely low volatile fluorides and therefore can be removed only by physical (sputter) etching

  16. Experimental and theoretical studies of the yields of residual product nuclei produced in thin Pb and Bi targets irradiated by 40 - 2600 MeV protons

    International Nuclear Information System (INIS)

    Titarenko, Yu. E.; Batyaev, V.F.; Karpikhin, E.I.; Zhivun, V.M.; Ignatyuk, A.V.; Lunev, V.P.; Titarenko, N.N.; Shubin, Yu.N.; Barashenkov, V.S.

    2009-10-01

    The Project is aimed at experimental determining and computer-aided theoretical simulating the independent and cumulative yields of residual radioactive product nuclei in high-energy protonirradiated thin targets made of high-isotopic and natural lead ( 206 Pb, 207 Pb, 208 PB, natPb) and bismuth ( 209 Bi) that are the most probable choice to be the target materials in the acceleratordriven (hybrid) systems (ADS) coupled to a high-current proton accelerator. The yields of residual product nuclei are of great importance when estimating such basic radiation-technology characteristics of the hybrid facility targets as the total target activity, the target 'poisoning', the buildup of long-lived nuclides, the α-activity, the content of low-pressure evaporated nuclides (Hg), the content of the chemically-active nuclides that drastically spoil the corrosion resistance of the facility structure materials, etc. In view of the above, the radioactive product nuclide yields from targets materials were experimentally determined using the ITEP U-10 proton accelerator in 55 measurement runs using the monoisotopic and natural lead ( 206 Pb, 207 Pb, 208 PB, natPb) and bismuth ( 209 Bi) targets within the proton energy range fractionated minutely, namely at 0.04, 0.07, 0.10, 0.8, 1.2, 1.4, 1.6, and 2.6 GeV to cover the entire range of the internuclear hadron cascading. As a result, 5972 cumulative and independent yields of residual radioactive product nuclei, whose lifetimes range from 8 minutes to 32 years, have been measured. Besides, the cross sections for the 27 Al(p,x) 24 Na and 27 Al(p,x)7Be monitor reactions have been measured at the same proton energies together with the 27 Al(n,p) 27 Mg reaction rate that characterizes the neutron background contributions in each experiment. The experimental nuclide yields are determined by the direct γ-spectrometry method. The γ-spectrometer resolution is 1.8 keV in the 1332 keV 60 Co γ-line. The experimental γ-spectra are processed by

  17. Structural characterization of PbTi03, Sm0.6Nd0.4NiO3 and NdMnO3 multifunctional Perovskite thin films

    Directory of Open Access Journals (Sweden)

    Rapenne L.

    2012-06-01

    Full Text Available Different multifunctional (PbTiO3, Sm0.6Nd0.4NiO3, NdMnO3 thin films were grown by metalorganic chemical vapor deposition (MOCVD technique on SrTiO3 and LaAlO3 substrates. TEM and X-ray diffraction measurements reveal that almost single crystalline thin films can be epitaxially grown on the top of substrates. The relationship between the crystallographic orientation of the films and those of the substrates were determined by reciprocal space mapping and TEM analyses. PbTi03 thin films appear to be under tensile or compressive strain according to the different mismatch of their cell parameter with those of the substrate. Relaxation mechanism as a function of the film thickness arises from coexistence of different type of domains and size and strain effect are analyzed. SmNiO3 thin films present diffuse scattering strikes and are less well organized when compared to PbTi03 thin films. Different domains are observed as well as an additional parasitic phase close to NiO. Its regular distribution can be associated to reduced transport properties. Preliminary observations on NdMnO3 thin films show that an amorphous phase is obtained during MOCVD that can be transformed in a single crystalline film by annealing. The films are under tensile or compressive strain according to the different mismatch of their cell parameter with those of the substrate. Magnetic properties are investigated.

  18. Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin-film capacitors with La-Sr-Co-O electrodes

    International Nuclear Information System (INIS)

    Lee, J.; Ramesh, R.; Keramidas, V.G.; Warren, W.L.; Pike, G.E.; Evans, J.T. Jr.

    1995-01-01

    La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O thin-film capacitors have been grown in various oxygen ambients by pulsed laser deposition. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. PLZT capacitors cooled in a fully oxidizing atmosphere (i.e., 1 atm oxygen pressure) exhibited nominally symmetric hysteresis loops and also showed little imprint both with and without fully saturating bias fields. We find that ambient oxygen pressure is an important process parameter and the imprint behavior is closely related with ambient oxygen induced effects such as oxygen vacancies, its related defect-dipole complexes and trapping of free charges. The different imprint behavior under negative and positive bias also suggests that the dipolar-defect complexes tend to cause imprint in PLZT capacitors

  19. Anelastic deformation of Pb(Zr,Ti)O3 thin films by non-180 deg. ferroelectric domain wall movements during nanoindentation

    International Nuclear Information System (INIS)

    Alguero, M.; Bushby, A.J.; Reece, M.J.; Seifert, A.

    2002-01-01

    Lead zirconate titanate Pb(Zr,Ti)O 3 ferroelectric thin films show significant anelastic deformation when indented with spherical tipped indenters. Experiments on films with different Zr/Ti ratio and a mixed , preferred crystallographic orientation have shown that there is a good agreement between the anelastic deformation and the maximum strain achievable by non-180 deg. domain wall movement. An expected increase of the indentation stiffness of the films also accompanies the anelastic deformation because of the single crystal elastic anisotropy. All these observations seem to indicate that non-180 deg. ferroelectric domain wall movements occur under indentation stresses and cause anelasticity. Stresses for maximum anelastic deformation are compared with those for recently reported stress-induced depolarization

  20. Investigation of optical and electrical properties of Pb(Zr1-xTix)O3 thin films on different substrates

    International Nuclear Information System (INIS)

    Kafadaryan, Eugenia; Aghamalyan, Natella; Nikogosyan, Sergey

    2006-01-01

    Pb(Zr 1-x Ti x )O 3 (PZT) polycrystalline thin films were prepared by sol-gel and pulsed laser deposition techniques on Pt/Ti/SiO 2 /Si (Pt) and SrRuO 3 /LaAlO 3 (SRO/LAO) substrates. Infrared reflectivity spectroscopy with oblique (45deg) light incidence revealed both the 3LO (688cm -1 ) phonon lineshape asymmetry decrease with increasing in thickness and the thinner, disordered boundary layer at the SRO/PZT interface independently of the film preparation method. The fatigue properties of PZT films were studied for various crystallographic orientations. It was observed that in the 52/48 PZT/SRO/LAO film, when the field is applied along the (001) direction, excellent fatigue resistance is obtained. (author)

  1. Comparative study of effects of Mo and W dopants on the ferroelectric property of Pb(Zr0.3Ti0.7) thin films

    International Nuclear Information System (INIS)

    Zhang Zhen; Wang Shijie; Lu Li; Shu Chang; Song Wendong; Wu Ping

    2008-01-01

    Pb(Zr 0.3 Ti 0.7 )O 3 thin films, respectively, doped with 1 mol% W and 1 mol% Mo have been deposited on the LaNiO 3 bottom electrodes using pulse laser deposition. The x-ray diffraction analyses revealed that both dopants induced (1 1 0) orientation of the perovskite structures. Compared with the undoped PZT films, the doped PZT films showed smoother and denser surfaces. The XPS measurements indicated that W possessed a valence state of +6 in the PZTW films, but Mo showed mixed valence states of +4 and +6. The hysteresis loops and fatigue results of the undoped, the W-doped (PZTW) and the Mo-doped PZT (PZTM) films were obtained. While both the two doped films revealed better fatigue behaviour than undoped PZT, the PZTW film had a slow fatigue rate in comparison with the PZTM film, which is consistent with our previous theoretical predictions

  2. Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

    Directory of Open Access Journals (Sweden)

    Takanori Kiguchi, Kenta Aoyagi, Yoshitaka Ehara, Hiroshi Funakubo, Tomoaki Yamada, Noritaka Usami and Toyohiko J Konno

    2011-01-01

    Full Text Available We have studied the strain field around the 90° domains and misfit dislocations in PbTiO3/SrTiO3 (001 epitaxial thin films, at the nanoscale, using the geometric phase analysis (GPA combined with high-resolution transmission electron microscopy (HRTEM and high-angle annular dark field––scanning transmission electron microscopy (HAADF-STEM. The films typically contain a combination of a/c-mixed domains and misfit dislocations. The PbTiO3 layer was composed from the two types of the a-domain (90° domain: a typical a/c-mixed domain configuration where a-domains are 20–30 nm wide and nano sized domains with a width of about 3 nm. In the latter case, the nano sized a-domain does not contact the film/substrate interface; it remains far from the interface and stems from the misfit dislocation. Strain maps obtained from the GPA of HRTEM images show the elastic interaction between the a-domain and the dislocations. The normal strain field and lattice rotation match each other between them. Strain maps reveal that the a-domain nucleation takes place at the misfit dislocation. The lattice rotation around the misfit dislocation triggers the nucleation of the a-domain; the normal strains around the misfit dislocation relax the residual strain in a-domain; then, the a-domain growth takes place, accompanying the introduction of the additional dislocation perpendicular to the misfit dislocation and the dissociation of the dislocations into two pairs of partial dislocations with an APB, which is the bottom boundary of the a-domain. The novel mechanism of the nucleation and growth of 90° domain in PbTiO3/SrTiO3 epitaxial system has been proposed based on above the results.

  3. Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

    Science.gov (United States)

    Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

    2014-12-01

    A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

  4. Towards in-situ tem analysis of PLD Pb(Zr,Ti)O3 thin film membranes

    NARCIS (Netherlands)

    Sardan Sukas, Ö.; Berenschot, Johan W.; de Boer, Meint J.; Nguyen, Duc Minh; van Zalk, M.; Abelmann, Leon

    2011-01-01

    In this paper, a novel technique for fabricating Transmission Electron Microscopy (TEM) chips for investigating structural and piezoelectric properties of Pulse Laser Deposited (PLD) Lead Zirconium Titanate (PZT) thin films is presented. The method involves silicon-on-insulator (SOI) wafer

  5. Large area deposition of Pb(Zr,Ti)O.sub.3./sub. thin films for piezoelectric MEMS

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Vidyarthi, V.S.; Reibold, M.; Deyneka, Alexander; Jastrabík, Lubomír; Gerlach, G.; Hartung, J.

    2008-01-01

    Roč. 20, - (2008), s. 17-20 ISSN 1385-3449 Institutional research plan: CEZ:AV0Z10100522; CEZ:AV0Z10100521 Keywords : ferroelectric thin films * PZT * high resolution transmission electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.990, year: 2008

  6. Characteristics of ferroelectric Pb(Zr,Ti)O3 thin films having Pt/PtOx electrode barriers

    International Nuclear Information System (INIS)

    Lee, Kwangbae; Rhee, Byung Roh; Lee, Chanku

    2001-01-01

    We have investigated the feasibility of the Pt/PtO x multilayer as an electrode barrier for Pb(Zr,Ti)O 3 (PZT)-based ferroelectric random access memories. PtO x and Pt layers were prepared on polycrystalline-Si/SiO 2 /Si substrates by means of the sputtering method in Ar and O 2 ambience, and the Pb(Zr 0.53 Ti 0.47 )O 3 layer was prepared by the sol-gel method. A capacitor consisting of Pt/PtO x /PZT/PtO x /Pt/PtO x /poly-Si had a remanent polarization of 18 μC/cm 2 and a low coercive field of 32 kV/cm. The polarization fatigue behavior of test capacitors was improved as compared with that of Pt/PZT/Pt, which showed negligible fatigue loss of 15% after 10 11 switching repetitions with a frequency of 1 MHz. Copyright 2001 American Institute of Physics

  7. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  8. A digital output piezoelectric accelerometer using a Pb(Zr, Ti)O3 thin film array electrically connected in series

    International Nuclear Information System (INIS)

    Kobayashi, T; Okada, H; Maeda, R; Itoh, T; Masuda, T

    2010-01-01

    A digital output piezoelectric accelerometer is proposed to realize an ultra-low power consumption wireless sensor node. The accelerometer has patterned piezoelectric thin films (piezoelectric plates) electrically connected in series accompanied by CMOS switches at the end of some of the piezoelectric plates. The connected piezoelectric plates amplify the output voltage without the use of amplifiers. The CMOS switches turn on when the output voltage of the piezoelectric plates is higher than the CMOS threshold voltage. The piezoelectric accelerometer converts the acceleration into a number of on-state CMOS switches, which can be called the digital output. The proposed digital output piezoelectric accelerometer, using Pb(Zr, Ti)O 3 (PZT) thin films as the piezoelectric material, was fabricated through a microelectromechanical system (MEMS) microfabrication process. The output voltage was found to be amplified by the number of connected piezoelectric plates. The DC output voltage obtained by using an AC to DC conversion circuit is proportional to the number of connections. The results show the potential for realizing the proposed digital output piezoelectric accelerometer

  9. Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

    Science.gov (United States)

    Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

    2011-07-01

    We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

  10. Far-infrared properties of sol-gel derived PbZr0.52Ti0.48O3 thin films on Pt-coated substrates

    International Nuclear Information System (INIS)

    Kafadaryan, E A; Hovsepyan, R K; Khachaturova, A A; Aghamalyan, N R; Shirinyan, G O; Manukyan, A L; Vardanyan, R S; Hayrapetyan, A G; Grigoryan, S G; Vardanyan, E S

    2003-01-01

    Polycrystalline tetragonal PbZr 0.52 Ti 0.48 O 3 (PZT) thin films have been deposited on the nickel and (111) platinum coated (110) sapphire substrates by the sol-gel method. Optical properties of the PZT thin films were studied using far-infrared reflectivity spectroscopy in the 200-10 000 cm -1 frequency range at 300 K. The frequency dependence of the optical characteristics (σ, ε, -Im ε -1 ) of the films were calculated by the Kramers-Kronig transformation of the reflectivity spectra and analysed by the Drude-Lorentz model. The frequency dependence of the optical conductivity, σ(ω), of the PZT films deposited on platinum coated sapphire is well described by the free-carrier term and an overdamped mid-infrared component. Sapphire/Pt/PZT structures reveal semiconductor properties (effective carrier concentration N/m* is up to 10 20 cm -3 , plasma minimum is located near 3000 cm -1 ). This effect can be related to the favourable influence of the platinum electrode on the charge carrier density at Pt/PZT contact and formation of the interfacial conductive layer

  11. Piezoelectric response and electrical properties of Pb(Zr1-xTix)O3 thin films: The role of imprint and composition

    Science.gov (United States)

    Cornelius, T. W.; Mocuta, C.; Escoubas, S.; Merabet, A.; Texier, M.; Lima, E. C.; Araujo, E. B.; Kholkin, A. L.; Thomas, O.

    2017-10-01

    The compositional dependence of the piezoelectric properties of self-polarized PbZr1-xTixO3 (PZT) thin films deposited on Pt/TiO2/SiO2/Si substrates (x = 0.47, 0.49 and 0.50) was investigated by in situ synchrotron X-ray diffraction and electrical measurements. The latter evidenced an imprint effect in the studied PZT films, which is pronounced for films with the composition of x = 0.50 and tends to disappear for x = 0.47. These findings were confirmed by in situ X-ray diffraction along the crystalline [100] and [110] directions of the films with different compositions revealing asymmetric butterfly loops of the piezoelectric strain as a function of the electric field; the asymmetry is more pronounced for the PZT film with a composition of x = 0.50, thus indicating a higher built-in electric field. The enhancement of the dielectric permittivity and the effective piezoelectric coefficient at compositions around the morphotropic phase boundary were interpreted in terms of the polarization rotation mechanism and the monoclinic phase in the studied PZT thin films.

  12. Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Bai, G. R.; Streiffer, S. K.; Baumann, P. K.; Auciello, O.; Ghosh, K.; Stemmer, S.; Munkholm, A.; Thompson, Carol; Rao, R. A.; Eom, C. B.

    2000-01-01

    Metal-organic chemical vapor deposition was used to prepare Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) thin films on (001) SrTiO 3 and SrRuO 3 /SrTiO 3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO 3 substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO 3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO 3 /SrTiO 3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm 2 . (c) 2000 American Institute of Physics

  13. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

    Science.gov (United States)

    Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

    1993-07-01

    Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

  14. Photoelectron spectroscopy and spectro-microscopy of Pb(Zr,Ti)O{sub 3} (1 1 1) thin layers: Imaging ferroelectric domains with binding energy contrast

    Energy Technology Data Exchange (ETDEWEB)

    Huşanu, Marius A.; Popescu, Dana G.; Tache, Cristian A. [National Institute of Materials Physics, Atomistilor 105b, 077125 Magurele-Ilfov (Romania); Apostol, Nicoleta G. [National Institute of Materials Physics, Atomistilor 105b, 077125 Magurele-Ilfov (Romania); Elettra Sincrotrone Trieste, S.S. 14 – km 163,5, Area Science Park, 34169 Basovizza-Trieste (Italy); Barinov, Alexei; Lizzit, Silvano; Lacovig, Paolo [Elettra Sincrotrone Trieste, S.S. 14 – km 163,5, Area Science Park, 34169 Basovizza-Trieste (Italy); Teodorescu, Cristian M., E-mail: teodorescu@infim.ro [National Institute of Materials Physics, Atomistilor 105b, 077125 Magurele-Ilfov (Romania)

    2015-10-15

    Graphical abstract: - Highlights: • Achievement of well ordered PZT(1 1 1) surfaces with reasonable low energy electron diffraction patterns and good stoichiometry. • Ability of photoelectron spectromicroscopy to visualize ferroelectric domains with contrast of binding energy. • Model taking into account the influence of photogenerated carriers on the depolarization field and its torque on the polarization vector. • Evidence of domain wall migration induced by photogenerated carriers. • Segregation of metal Pb only on areas with out-of-plane component of the polarization pointing outwards. - Abstract: The ability of photoelectron spectro-microscopy with sub-micrometer lateral resolution to identify ferroelectric domains by analysis of surface band bendings is demonstrated on lead zirco-titanate PZT(1 1 1) thin films grown by pulsed laser deposition. Conventional synchrotron radiation X-ray photoelectron spectroscopy allowed one to derive the surface composition of the sample and evidenced shifts toward higher binding energy when the sample is subject to intense soft X-ray beam. A basic model is developed which supposes that photogenerated carriers reduce the depolarization field, yielding a lower torque applied to the ferroelectric polarization. As a consequence, the out-of-plane component of the polarization increases. Domain migration during irradiation with soft X-ray is inferred from the relative amplitude of the components with different binding energy. When the flux density of soft X-ray is on the order of 10{sup 11} photons/(s μm{sup 2}), metal Pb clusters are formed at the surface on areas with the out-of-plane component of the polarization pointing outwards only.

  15. Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 thin films derived at low temperature

    Science.gov (United States)

    Zhu, Hanfei; Ma, Hongfang; Zhao, Yuyao

    2018-05-01

    Highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.15, y = 0.05; x = 0.1, y = 0.1; x = 0.05, y = 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450 °C via a sol-gel route. It was found that all the (Pb1-x-yLaxCay)Ti1-x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.1, y = 0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan ⁡ δ energy density (Wre ∼ 15 J/cm3), as well as a large pyroelectric coefficient (p ∼ 190 μC/m2K) and figure of merit (Fd‧∼ 77 μC /m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.

  16. H and C NMR investigations of Pb(Zr,Ti)O3 thin-film precursor solutions

    International Nuclear Information System (INIS)

    Assink, R.A.; Schwartz, R.W.

    1993-01-01

    Solvent reactions, ligand substitutions, and the oligomer/polymer backbone structure are important factors in the solution preparation of ceramic films. In this study the authors have used H and C NMR spectroscopy to characterize solvent and ligand effects in precursor solutions used for the deposition of ferroelectric PZT (lead zirconate titanate) thin films. Solutions were prepared by a sequential precursor addition method from carboxylate and alkoxide precursors of the three cations, and the solvent, acetic acid, methanol, and water. The results indicate that acetic acid was a key component in the solution preparation process. As observed previously for single metallic component systems, its presence resulted in esterification reactions, leading in the present case to the formation of methyl, isopropyl, and n-butyl acetates. Second, acetic acid functioned as a chemical modifier, or chelating agent, replacing essentially all of the alkoxy ligands of the original precursors. Since alkoxy replacement appeared to be complete, we may describe the PZT species formed in solution as oxo acetate in nature. Finally, the solvent and ligand behavior of a solution prepared by an inverted mixing order was compared to the behavior of the solution prepared by a sequential precursor addition. The spectra for the two solutions were similar, and only differences in the relative intensities of the ester and alcoholic resonances were observed. 29 refs., 5 figs., 3 tabs

  17. Dependence of e31,f on polar axis texture for tetragonal Pb(Zrx,Ti1-x)O3 thin films

    Science.gov (United States)

    Yeager, Charles B.; Ehara, Yoshitaka; Oshima, Naoya; Funakubo, Hiroshi; Trolier-McKinstry, Susan

    2014-09-01

    It was shown by Ouyang et al. [Appl. Phys. Lett. 86, 152901 (2005)] that the piezoelectric e31,f coefficient is largest parallel to the spontaneous polarization in tetragonal PbZrxTi1-xO3 (PZT) films. However, the expected piezoelectric data are typically calculated from phenomenological constants derived from data on ceramic PZT. In this work, the dependence of e31,f on c-axis texture fraction, f001, for {001}PZT thin films was measured by growing films with systematically changed f001 using CaF2, MgO, SrTiO3, and Si substrates. An approximately linear increase in e31,f with f001 was observed for compositions up to 43 mol. % Zr, and 100% c-domain properties were extrapolated. It was demonstrated that c-axis PZT films can achieve e31,f exceeding -12 C/m2 for many tetragonal compositions. The energy harvesting figure of merit, e31,f2/ɛr, for c-axis PZT films surpassed 0.8 C2/m4. This is larger than the figure of merit of gradient-free PZT films grown on Si substrates by a factor of four.

  18. Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

    Science.gov (United States)

    Bouregba, R.; Sama, N.; Soyer, C.; Poullain, G.; Remiens, D.

    2010-05-01

    Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., [J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (Edep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of Edep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode—PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena.

  19. Influence of Zr/Ti ratio and preferred orientation on polarization switching and domain configuration of Pb(Zr1-xTix)O3 thin films

    International Nuclear Information System (INIS)

    Lee, Young Hyun; Lee, Jung Kun; Hong, Kug Sun

    2003-01-01

    The (100) and (111) oriented Pb(Zr 1-x Ti x )O 3 (PZT) thins films were prepared on Pt/TiO 2 /SiO 2 /Si(100) substrate using sol-gel process. The ferroelectric and dielectric properties were evaluated as a function of Zr/Ti ratio and the origin of their changes were discussed in terms of domain engineering. With increasing Zr/Ti ratio, the remnant polarization of the polar axis decreased from 23.87 to 10.66 μC/cm 2 and the difference of the saturated polarization between polar axis and non-polar axis increased systematically. The fatigue rate of PZT films was disproportional to Zr/Ti ratio. At a composition of x = 0.7, the remnant polarization decreased from 2P r = 30.82 μC/cm 2 to 26.60 μC/cm 2 after 6.9 x 10 10 cycles. The fatigue rate was also related to the direction of polarization reversal and the increased fatigue behavior was observed in polar axis. These results were discussed with the aid of the domain configuration and the switching current, which revealed the role of the internal stress on ferroelectric property of PZT films

  20. Production of BiPbSrCaCuO thin films on MgO and Ag/MgO substrates by electron beam deposition techniques

    CERN Document Server

    Varilci, A; Gorur, O; Celebi, S; Karaca, I

    2002-01-01

    Superconducting BiPbSrCaCuO thin films were prepared on MgO(001) and Ag/MgO substrates using an electron beam (e-beam) evaporation technique. The effects of annealing temperature and Ag diffusion on the crystalline structure and some superconducting properties, respectively, were investigated by X-ray diffraction, atomic force microscopy, and by measurements of the critical temperature and the critical current density. It was shown that an annealing of both types of films at 845 or 860 C resulted in the formation of mixed Bi-2223 and Bi-2212 phases with a high degree of preferential orientation with the c-axis perpendicular to the substrates. The slight increase of the critical temperature from 103 K to 105 K, the enhancement of the critical current density from 2 x 10 sup 3 to 6 x 10 sup 4 A/cm sup 2 , and the improved surface smoothness are due to a possible silver doping from the substrate. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  1. High-Pressure-Induced Comminution and Recrystallization of CH3 NH3 PbBr3 Nanocrystals as Large Thin Nanoplates.

    Science.gov (United States)

    Yin, Tingting; Fang, Yanan; Chong, Wee Kiang; Ming, Koh Teck; Jiang, Shaojie; Li, Xianglin; Kuo, Jer-Lai; Fang, Jiye; Sum, Tze Chien; White, Timothy J; Yan, Jiaxu; Shen, Ze Xiang

    2018-01-01

    High pressure (HP) can drive the direct sintering of nanoparticle assemblies for Ag/Au, CdSe/PbS nanocrystals (NCs). Instead of direct sintering for the conventional nanocrystals, this study experimentally observes for the first time high-pressure-induced comminution and recrystallization of organic-inorganic hybrid perovskite nanocrystals into highly luminescent nanoplates with a shorter carrier lifetime. Such novel pressure response is attributed to the unique structural nature of hybrid perovskites under high pressure: during the drastic cubic-orthorhombic structural transformation at ≈2 GPa, (301) the crystal plane fully occupied by organic molecules possesses a higher surface energy, triggering the comminution of nanocrystals into nanoslices along such crystal plane. Beyond bulk perovskites, in which pressure-induced modifications on crystal structures and functional properties will disappear after pressure release, the pressure-formed variants, i.e., large (≈100 nm) and thin (perovskite nanoplates, are retained and these exhibit simultaneous photoluminescence emission enhancing (a 15-fold enhancement in the photoluminescence) and carrier lifetime shortening (from ≈18.3 ± 0.8 to ≈7.6 ± 0.5 ns) after releasing of pressure from 11 GPa. This pressure-induced comminution of hybrid perovskite NCs and a subsequent amorphization-recrystallization treatment offer the possibilities of engineering the advanced hybrid perovskites with specific properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Ferroelectric properties of BaTiO3/PbZr0.2Ti.08O3 bilayer thin film

    Science.gov (United States)

    Salev, Pavel; Yang, Chun; Grigoriev, Alexei

    2014-03-01

    The thin film ferroelectric BaTiO3/PbZr0.2Ti0.8O3 bilayer was epitaxially grown on SrRuO3/SrTiO3 substrate by RF sputtering. Electrical measurements of polarization switching revealed two different switching regimes - a small ferroelectric hysteresis loop at low applied voltage and a larger loop at a high voltage. The measured dielectric permittivity corresponds to weak electrostatic coupling between two layers according to Landau-Ginsburg-Devonshire theory. This weak coupling may allow for independent polarization states to exist in individual layers. This can lead to stable head-to-head and tail-to-tail polarization domain configurations, which would explain the two switching regimes observed in electrical measurements. The compensation of polarization gradient across the interface can be explained by the enhancement of interface charge carrier density due to strong bending of electron energy bands. This work was supported by NSF award DMR-1057159.

  3. Thermally activated dissipation and critical field Hc2 in c-oriented high-Tc Bi-Pb-Sr-Ca-Cu-O thin film

    International Nuclear Information System (INIS)

    Wang, Y.H.; Cui, C.G.; Zhang, Y.Z.; Li, S.L.; Li, J.; Li, L.

    1991-01-01

    A set of resistivity-temperature (R-T) curves measured under various applied fields in a high-T c Bi-Pb-Sr-Ca-Cu-O thin film which has a zero-resistance temperature T c0 of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux-creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation-dependent activation energy U 0 (H,Θ). The U 0 (H,Θ) has a very high value of 381.6 meV under a field of 0.1 T parallel to the c axis. The upper critical field H c2 determined from these R-T curves shows high values and the effect of flux creep to the H c2 (0) is examined by the irreversible behavior with the ''giant'' flux-creep model

  4. Photoinduced effects of ferroelectric domains in PbZr1-xTixO3 thin films as obtained by using piezoresponse force microscopy

    International Nuclear Information System (INIS)

    Jang, Y. H.; Kim, C. H.; Hwang, H. J.; Cho, J. H.; Moon, H. B.; Bhang, S. H.

    2011-01-01

    Piezoresponse force microscopy (PFM) has been used to investigate the photoinduced effect of ferroelectric domains in PbZr 1-x Ti x O 3 (PZT) thin films. In order to perform nondestructive visualization of the high-resolution domain structure, we optimized the imaging condition, such as applying a lower voltage than 1.0 Vpp (peak-to-peak voltage). In this study, domain changes were measured before and after illumination on the surface of PZT films by using an UV light emitting diode (LED) source (λ = 310 nm) with a focusing lens to investigate the influence of the photoinduced carriers on the ferroelectric polarization. In addition, to investigate the photoinduced effects on the domain distribution, we performed histogram of positive and negative domains before and after UV-light illumination. The illumination with UV light resulted in an increase of the positive domain of the out-of-plane mode. Also, a change in the out-of-plane domain distribution was observed before and after UV illumination. The relaxation of photoinduced changes was monitored by repeated scans within a time range of 20 ∼ 60 minutes.

  5. Electrode contacts on ferroelectric Pb(Zr x Ti1−x )O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties

    OpenAIRE

    Lee, J. J.; Thio, C. L.; Desu, Seshu B.

    1995-01-01

    The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1-x)O-3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low-fiel...

  6. Preparation and Characterization of PbO-SrO-Na2O-Nb2O5-SiO2 Glass Ceramics Thin Film for High-Energy Storage Application

    Science.gov (United States)

    Tan, Feihu; Zhang, Qingmeng; Zhao, Hongbin; Wei, Feng; Du, Jun

    2018-03-01

    PbO-SrO-Na2O-Nb2O5-SiO2 (PSNNS) glass ceramic thin films were prepared by pulsed laser deposition technology on heavily doped silicon substrates. The influence of annealing temperatures on microstructures, dielectric properties and energy storage performances of the as-prepared films were investigated in detail. X-ray diffraction studies indicate that Pb2Nb2O7 crystallizes at 800°C and disappears at 900°C, while NaNbO3 and PbNb2O6 are formed at the higher temperature of 900°C. The dielectric properties of the glass ceramics thin films have a strong dependence on the phase assemblages that are developed during heat treatment. The maximum dielectric constant value of 171 was obtained for the film annealed at 800°C, owing to the high electric breakdown field strength, The energy storage densities of the PSNNS films annealed at 800°C were as large as 36.9 J/cm3, These results suggest that PSNNS thin films are promising for energy storage applications.

  7. Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

    Science.gov (United States)

    Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

    2017-12-01

    This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

  8. Hybrid perovskite solar cells: In situ investigation of solution-processed PbI2 reveals metastable precursors and a pathway to producing porous thin films

    KAUST Repository

    Barrit, Dounya

    2017-04-17

    The successful and widely used two-step process of producing the hybrid organic-inorganic perovskite CH3NH3PbI3, consists of converting a solution deposited PbI2 film by reacting it with CH3NH3I. Here, we investigate the solidification of PbI2 films from a DMF solution by performing in situ grazing incidence wide angle X-ray scattering (GIWAXS) measurements. The measurements reveal an elaborate sol–gel process involving three PbI2⋅DMF solvate complexes—including disordered and ordered ones—prior to PbI2 formation. The ordered solvates appear to be metastable as they transform into the PbI2 phase in air within minutes without annealing. Morphological analysis of air-dried and annealed films reveals that the air-dried PbI2 is substantially more porous when the coating process produces one of the intermediate solvates, making this more suitable for subsequent conversion into the perovskite phase. The observation of metastable solvates on the pathway to PbI2 formation open up new opportunities for influencing the two-step conversion of metal halides into efficient light harvesting or emitting perovskite semiconductors.

  9. Sequential Introduction of Cations Deriving Large-Grain Csx FA1-x PbI3 Thin Film for Planar Hybrid Solar Cells: Insight into Phase-Segregation and Thermal-Healing Behavior.

    Science.gov (United States)

    Huang, Jiahao; Xu, Pan; Liu, Jian; You, Xiao-Zeng

    2017-03-01

    Composition engineering of perovskite materials has been demonstrated to be important for high-performance solar cells. Recently, the energy favorable hybridization of formamidinium (FA) and cesium (Cs) in three dimension lead halide perovskites has been attracting increasing attention due to its potential benefit on durability. Herein, we reported a simple and effective method to produce phase-pure CsxFA1-xPbI3 thin film via sequential introduction of cations, in which the FA cation was introduced by interdiffusion annealing in the presence of N-methylimidazole (NMI). NMI was employed as an additive to slow down the crystallization and thus drive the formation of CsxFA1-xPbI3 with micrometer grain size, which probably facilitate the charge dissociation and transportation in photovoltaic devices. More importantly, composition dependent phase-segregation has been revealed and investigated for the first time during the phase-pure mixed-cation perovskites CsxFA1-xPbI3. The present findings demonstrated that suppressing phase-segregation of mixed-cation perovskites by meticulous composition engineering is significant for further development of efficient photovoltaics. It also suggested that phase-pure Cs0.15FA0.85PbI3 may be a promising candidate with superior phase-durability, which performed an efficiency over 16% in planar perovskite solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Ferroelectric properties of sandwich structured (Bi, La)4T3O12/Pb(Zr, Ti)O3/ (Bi, La)4Ti3O12 thin films on Pt/Ti/SiO2/Si substrates

    International Nuclear Information System (INIS)

    Bao Dinghua; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

    2002-01-01

    Sandwich structured (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 /(Bi, La) 4 Ti 3 O 12 thin films were fabricated on Pt/Ti/SiO 2 /Si substrates, with the intention of simultaneously utilizing the advantages of both (Bi, La) 4 Ti 3 O 12 (BLT) and Pb(Zr, Ti)O 3 (PZT) thin films such as non-fatigue behaviours of BLT and good ferroelectric properties of PZT. Both BLT and PZT layers were prepared by a chemical solution deposition technique. The experiments demonstrated that the sandwich structure showed fatigue-free characteristics at least up to 10 10 switching bipolar pulse cycles under 8 V and excellent retention properties. The sandwich structured thin films also exhibited well-defined hysteresis loops with a remanent polarization (2P r ) of 8.8 μC cm -2 and a coercive field (E c ) of 47 kV cm -1 . The room-temperature dielectric constant and dissipation factor were 210 and 0.031, respectively, at a frequency of 100 kHz. These results suggest that this sandwich structure is a promising material combination for ferroelectric memory applications. (author)

  11. Magnetically tunable dielectric, impedance and magnetoelectric response in MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3} composites thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bala, Kanchan, E-mail: bala.kanchan1987@gmail.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India); Kotnala, R.K. [CSIR, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Negi, N.S., E-mail: nsn_phy_hpu@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India)

    2017-02-15

    We have synthesized piezomagnetic–piezoelectric composites thin films MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3}, where x=0.1, 0.2, and 0.3, using the metalorganic deposition (MOD) reaction method. The structural and microstructural analysis using the X-ray diffraction (XRD), AFM, and SEM reveals the presence of homogenous growth of both pervoskite and spinel phases in the composite films. Our results show that all the composites films exhibit good multiferroic as well as considerable magnetoelectric coupling. The impedance (Z′ and Z″) and electrical modulus (M′ and M″) Nyquist plots show distinct electrical responses with the magnetic field. Our analyses suggest that this electrical response arises due to the coexistence of the high resistive phase and the comparatively conductive phase in the MFO/PST composite films. The maximum magnetoelectric coefficient (α) is found to be 4.29 V Oe{sup −1} cm{sup −1} and 2.82 V Oe{sup −1} cm{sup −1} for compositions x=0.1 and 0.2. These values are substantially larger than those reported for bilayer composites thin films in literature and make them interesting for room temperature device applications. - Highlights: • Influence of Sr doping on multiferroic and magnetoelectric properties composites thin films of MnFe{sub 2}O{sub 4} and (Pb, Sr)TiO{sub 3}. • Dielectric constant and dielectric loss with application of magnetic field. • Magnetically tunable AC electrical properties. • Magnetoelectric coupling in MnFe{sub 2}O{sub 4}/(Pb, Sr)TiO{sub 3} composite films by passive method.

  12. Neutron production in bombardments of thin and thick W, Hg, Pb targets by 0.4, 0.8, 1.2, 1.8 and 2.5 GeV protons

    International Nuclear Information System (INIS)

    Letrourneau, A.; Galin, J.; Goldenbaum, F.; Lott, B.; Peghaire, A.; Enke, M.; Hilscher, D.; Jahnke, U.; Nuenighoff, K.; Filges, D.; Neef, R.D.; Paul, N.; Schaal, H.; Sterzenbach, G.; Tietze, A.

    2000-05-01

    Neutron experimental data relevant to the design of the target of neutron spallation sources are presented and discussed. The data include the reaction cross sections for W, Hg and Pb investigated with 0.4, 0.8, 1.2, 1.8 and 2.5 GeV proton beams as well as the neutron production, neutron multiplicity distribution, as determined event per event using a high efficiency detector. The production as a function of target material is investigated for both thin (with a single reaction) and thick targets (multiple reactions). Comparisons are made with the predictions of a high energy transport code. (authors)

  13. Free and localised exciton of ternary nanocrystals in CsX-PbX.sub.2./sub. thin films (X= Cl, Br, I)

    Czech Academy of Sciences Publication Activity Database

    Somma, E.; Aloe, P.; Mastro, Lo S.; Giampaolo, C.; Nikl, Martin; Nitsch, Karel; Fabeni, P.; Pazzi, G.P.

    2001-01-01

    Roč. 156, 1-4 (2001), s. 103-107 ISSN 1042-0150. [International Conference on Defects in Insulating Materials /14./. Johannesburg, 03.04.2000-07.04.2000] Institutional research plan: CEZ:AV0Z1010914 Keywords : CsPbX 3 * CsPbX 6 * nanoaggregates * XRD * absorption * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.380, year: 2001

  14. Ultra Uniform Pb0.865La0.09(Zr0.65Ti0.35O3 Thin Films with Tunable Optical Properties Fabricated via Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Shenglin Jiang

    2018-03-01

    Full Text Available Ferroelectric thin films have been utilized in a wide range of electronic and optical applications, in which their morphologies and properties can be inherently tuned by a qualitative control during growth. In this work, we demonstrate the evolution of the Pb0.865La0.09(Zr0.65Ti0.35O3 (PLZT thin films on MgO (200 with high uniformity and optimized optical property via the controls of the deposition temperatures and oxygen pressures. The perovskite phase can only be obtained at the deposition temperature above 700 °C and oxygen pressure over 50 Pa due to the improved crystallinity. Meanwhile, the surface morphologies gradually become smooth and compact owing to spontaneously increased nucleation sites with the elevated temperatures, and the crystallization of PLZT thin films also sensitively respond to the oxygen vacancies with the variation of oxygen pressures. Correspondingly, the refractive indices gradually develop with variations of the deposition temperatures and oxygen pressures resulted from the various slight loss, and the extinction coefficient for each sample is similarly near to zero due to the relatively smooth morphology. The resulting PLZT thin films exhibit the ferroelectricity, and the dielectric constant sensitively varies as a function of electric filed, which can be potentially applied in the electronic and optical applications.

  15. Effects of thermal treatment conditions on the phase formation and the morphological changes of sol-gel derived 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films

    International Nuclear Information System (INIS)

    Yang, Sun A; Han, Jin Kyu; Choi, Yong Chan; Bu, Sang Don

    2011-01-01

    We report the synthesis of Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) thin films and the effects of thermal conditions on their surface morphologies and phase formation behaviors. The PMN-PT thin films were prepared by spin-coating PMN-PT sol-gel solutions on Pt/Ti/SiO 2 /Si substrates and subsequent thermal treatments including pyrolysis, annealing, and additional pre-annealing. We found that the surface morphologies and the formation of the perovskite phase were strongly affected by the final annealing temperature. The grain size of perovskite phase and the amount of the perovskite phase increased as the annealing temperature was increased from 550 to 800 .deg. C. We also found that the voids started to form on the surface of the film at an annealing temperature of 650 .deg. C and that their areas increased with increasing in annealing temperature. The void formation was found to depend on the time period of pyrolysis and on the pre-annealing process between pyrolysis and final annealing. Dense PMN-PT films with relatively high amounts of the perovskite phase were obtained when additional pre-annealing at 750 .deg. C for 5 min was performed.

  16. Hybrid perovskite solar cells: In situ investigation of solution-processed PbI2 reveals metastable precursors and a pathway to producing porous thin films

    KAUST Repository

    Barrit, Dounya; Sheikh, Arif D.; Munir, Rahim; Barbe, Jeremy; Li, Ruipeng; Smilgies, Detlef-M.; Amassian, Aram

    2017-01-01

    from a DMF solution by performing in situ grazing incidence wide angle X-ray scattering (GIWAXS) measurements. The measurements reveal an elaborate sol–gel process involving three PbI2⋅DMF solvate complexes—including disordered and ordered ones

  17. Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

    NARCIS (Netherlands)

    Bayraktar, Muharrem; Chopra, A.; Bijkerk, Frederik; Rijnders, Augustinus J.H.M.

    2014-01-01

    Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In

  18. The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)TiO3 thin films

    Science.gov (United States)

    Khan, Asif Islam; Yu, Pu; Trassin, Morgan; Lee, Michelle J.; You, Long; Salahuddin, Sayeef

    2014-07-01

    We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(Zr0.2Ti0.8)TiO3 (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a fatigue in ferroelectric materials.

  19. A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

    Science.gov (United States)

    Kobayashi, T.; Maeda, R.; Itoh, T.

    2008-11-01

    In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.

  20. A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

    International Nuclear Information System (INIS)

    Kobayashi, T; Maeda, R; Itoh, T

    2008-01-01

    In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 V pp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 10 7 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method

  1. Preparation of Pb(Zr0.52Ti0.48)O3 thin films on Pt/RuO2 double electrode by a new sol-gel route

    International Nuclear Information System (INIS)

    Kim, S.; Choi, Y.; Kim, C.; Oh, Y.

    1997-01-01

    Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin film on Pt/RuO 2 double electrode was successfully prepared by using new alkoxide endash alkanolamine, sol-gel method. It was observed that the use of Pt/RuO 2 double electrode reduced leakage current, resulting in a marked improvement in the leakage characteristics and more reliable capacitors. Typical P-E hysteresis behavior was observed even at low applied voltage of 5 V, manifesting greatly improved remanance and coercivity. Fatigue and breakdown characteristic, measured at 5 V, showed stable behavior and no degradation in polarization was observed up to 10 11 cycles.copyright 1997 Materials Research Society

  2. Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

    International Nuclear Information System (INIS)

    Ma, Chunrui; Wu, Judy; Ma, Beihai; Mi, Shao-Bo; Liu, Ming

    2014-01-01

    High quality c-axis oriented epitaxial Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films were fabricated using pulsed laser deposition on (001) LaAlO 3 substrates with conductive LaNiO 3 buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices

  3. The off-stoichiometric Bi1.8Pb0.3Sr2Ca2Cu3.3Ox target for thin films

    International Nuclear Information System (INIS)

    Harabor, A.; Deletter, M.

    1996-01-01

    X-ray diffraction (XRD), EDAX, AC susceptibility and resistivity measurements has been used as characterization methods for the Bi-2223 monophase target with the starting stoichiometry Bi 1.8 Pb 0.3 Sr 2 Ca 2 Cu 3.3 O x . Pressure parameter is playing an important role in obtaining good superconducting properties for this compound. Critical currents and activation energy has been calculated from susceptibility and magnetoresistivity curves, respectively. The results could be interpreted in terms of TAPS and TAFF models. (orig.)

  4. Multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 layers for tunable applications

    Science.gov (United States)

    Yu, Shihui; Li, Lingxia; Zhang, Weifeng; Sun, Zheng; Dong, Helei

    2015-01-01

    The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability = 49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin–film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500 kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices. PMID:25960043

  5. Effects of heat-treatment conditions on electrical properties of sol-gel-derived ferroelectric Pb(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Shim, Donghyun; Pak, Jaemoon; Nam, Kuangwoo; Park, Gwangseo

    2005-01-01

    Pb(Zr,Ti)O 3 (PZT) films with Zr/Ti ratio of 50 : 50 were prepared by spin-casting at 3000 rpm for 30 sec on Pt/Ti/SiO 2 /Si substrates. After standard processing procedure, three different methods of annealing were conducted at 600 .deg. C : a single-step process carried out in (a) air, and (b) O 2 ambient, and (c) a 2-step process carried out in air, followed by an O 2 annealing process. These films were highly oriented along the (111) direction with large remnant polarization and low coercive voltage values. The films treated in O 2 had relatively larger polarization values, but the 2-step-annealed films possessed lower coercive voltage. Fatigue measurements were conducted until 1 X 10 10 switching cycles, resulting in abnormal switching characteristics for these films. A comparative study on the ferroelectric and fatigue properties will be emphasized.

  6. Inhomogeneous nucleation and domain wall motion with Barkhausen avalanches in epitaxial PbZr0.4Ti0.6O3 thin films

    International Nuclear Information System (INIS)

    Yang, Sang Mo; Kim, Hun Ho; Kim, Tae Heon; Kim, Ik Joo; Yoon, Jong Gul

    2012-01-01

    We investigated the ferroelectric (FE) domain nucleation and domain wall motion in epitaxial PbZr 0.4 Ti 0.6 O 3 capacitors by using modified piezoresponse force microscopy with the domain-tracing method. From time-dependent FE domain evolution images, we observed that defect-mediated inhomogeneous nucleation occurred with a stochastic nature. In addition, we found that the number of nuclei N(t) was linearly proportional to log t, where t is the accumulated time of the applied pulse fields. The time-dependence of N(t) suggests a distribution of energy barriers for nucleation, which may determine the stochastic nature of domain nucleation. We also observed that the domain grew with consecutive Barkhausen avalanches and that the growth direction became anisotropic when the domain radius was larger than a critical radius of about 100 nm.

  7. Effects of the top-electrode preparation method on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

    International Nuclear Information System (INIS)

    Lee, Eun Gu; Lee, Jae Gab; Kim, Sun Jae

    2006-01-01

    The deformation in the hysteresis loop of Pt/PZT/Pt thin-film capacitors due to deposition and patterning of the top electrode has been investigated. The PZT film was aged during the deposition of the top electrode and was positively poled during reactive ion etching (RIE). The PZT film having sputtered top electrode was very sensitive to the RIE process. The film with a thinner top electrode showed less initial switching polarization due to less compressive stress, but better fatigue characteristics due to an enhanced partial-switching region.

  8. Thin films of molecular materials synthesized from C32H20N10M (M Co, Pb, Fe): Film formation, electrical and optical properties

    International Nuclear Information System (INIS)

    Rodriguez, A.; Sanchez Vergara, M.E.; Garcia Montalvo, V.; Ortiz, A.; Alvarez, J.R.

    2010-01-01

    In this work, the synthesis of molecular materials formed from metallic phthalocyanines and 1,4-phenylenediamine is reported. The powder and thin film (∼80-115 nm thickness) samples of the synthesized materials, deposited by vacuum thermal evaporation, show the same intra-molecular bonds in the IR spectroscopy studies, which suggests that the thermal evaporation process does not alter these bonds. The morphology of the deposited films was studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and their optical and electrical properties were studied as well. The optical parameters have been investigated using spectrophotometric measurements of transmittance in the wavelength range 200-1200 nm. The absorption spectra recorded in the UV-vis region for the deposited samples showed two bands, namely the Q and Soret bands. The optical activation energy was calculated and found to be 3.41 eV for the material with cobalt, 3.34 eV for the material including lead and 3.5 eV for the material with iron. The effect of temperature on conductivity was measured for the thin films and the corresponding conduction processes are discussed in this work.

  9. Pb II

    African Journals Online (AJOL)

    Windows User

    This investigation describes the use of non-living biomass of Aspergillus caespitosus for removal of ... Pb(II) production has exceeded 3.5 million tons per year. It has been used in the ... This biomass was selected after screening a wide range of microbes. .... prolonged, which proved better biopolymer in metal uptake (Gadd ...

  10. Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vu, Hien Thu [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Houwman, Evert; Boota, Muhammad [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Dekkers, Matthijn [SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Vu, Hung Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Rijnders, Guus [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-12-15

    Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between

  11. Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

    Science.gov (United States)

    Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G.

    2014-09-01

    Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 × 109 cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.

  12. High throughput two-step ultrasonic spray deposited CH3NH3PbI3 thin film layer for solar cell application

    Science.gov (United States)

    Lan, Ding-Hung; Hong, Shao-Huan; Chou, Li-Hui; Wang, Xiao-Feng; Liu, Cheng-Liang

    2018-06-01

    Organometal halide perovskite materials have demonstrated tremendous advances in the photovoltaic field recently because of their advantageous features of simple fabrication and high power conversion efficiency. To meet the high demand for high throughput and cost-effective, we present a wet process method that enables the probing of the parameters for perovskite layer deposition through two-step sequential ultrasonic spray-coating. This paper describes a detailed investigation on the effects of modification of spray precursor solution (PbI2 and CH3NH3I precursor concentration and solvents used) and post-annealing condition (temperature and time), which can be performed to create optimal film quality as well as improve device efficiency. Through the systematic optimization, the inverted planar perovskite solar cells show the reproducible photovoltaic properties with best power conversion efficiency (PCE) of 10.40% and average PCE of 9.70 ± 0.40%. A continuous spray-coating technique for rapid fabrication of total 16 pieces of perovskite films was demonstrated for providing a viable alternative for the high throughput production of the perovskite solar cells.

  13. Effect of structural in-depth heterogeneities on electrical properties of Pb(Zr0.52Ti0.48) O3 thin films as revealed by nano-beam X-ray diffraction

    Science.gov (United States)

    Vaxelaire, N.; Kovacova, V.; Bernasconi, A.; Le Rhun, G.; Alvarez-Murga, M.; Vaughan, G. B. M.; Defay, E.; Gergaud, P.

    2016-09-01

    A direct quantification of a structural in-depth composition in the lead zirconate titanate Pb(Zr,Ti)O3 thin films of morphotropic composition has been conducted using the newly available X-ray nano-pencil beam (i.e., beam size of 100 nm × 1 μm) diffraction approach. We tested two samples with different Zr/Ti chemical gradients. Here, we demonstrate the presence of a significant microstructural gradient between the rhombohedral and tetragonal phases through PbZrxTi1-xO3 (PZT) films with a 100 nm in-depth resolution. The phase gradient extends over around 350 nm, and it is repeated through the PZT film three times, which corresponds to the number of thermal annealings. Moreover, this microstructural gradient is in agreement with the Zr/Ti chemical gradient observed by the secondary ion mass spectroscopy (SIMS). Indeed, the quantity of tetragonal phases rises in the Ti-rich zones as revealed by SIMS, and the quantity of rhombohedral phases rises in the Zr-rich zones. We also demonstrated a huge difference in the in-depth phase variation between the two tested samples. The gradient free sample still contains 4.7% of phase variation through the film and the amplified gradient contains 9.6% of phase variation through the film. Knowing that the gradient free sample shows better electric and piezoelectric coefficients, one can draw a correlation between the chemical composition, crystallographic homogeneity, and electro-mechanical properties of the film. The more close the film is to the morphotropic composition and the more it is crystallographically homogeneous, the higher the piezoelectric coefficients of the PZT are. Finally, the adequate knowledge of phase variation and its relation to the fabrication technique are crucial for the enhancement of the PZT electro-mechanical properties. Our methodology and findings open up new perspectives in establishing a relevant quantitative feedback to reach an ultimate electro-mechanical coupling in the sol-gel PZT thin films.

  14. Measurements of labile Cd, Cu, Ni, Pb, and Zn levels at a northeastern Brazilian coastal area under the influence of oil production with diffusive gradients in thin films technique (DGT).

    Science.gov (United States)

    de Souza, João M; Menegário, Amauri A; de Araújo Júnior, Marcus A G; Francioni, Eleine

    2014-12-01

    In this work, the ability of the diffusive gradients in thin films technique (DGT) was evaluated for monitoring the concentrations, and estimating the availability, of metals at a northeastern Brazilian coastal area under the influence of oil production. Three sites with an average distance between 0m (EM-1), 100 m (EM-2), and 1,000 m (EM-3) of a submarine outfall-I (Guamaré-RN, Brazil) and another site (GA-1) with an average distance of 12,000 m east of Outfall I, near the city of Galinhos, were studied. DGT units were deployed at the same sites in three campaigns from July, 2010 to June, 2011. Effects on the accuracy of analytical results regarding the deployment time, gel porosity, and thickness were evaluated. There was no difference between the measurements obtained with two sets of DGT devices, those assembled with open or restrictive pore gel, respectively, showing that organic metallic species are not present near the submarine outlet. After 21 day deployments in a region (near Submarine Outfall I) that receives produced waters that have been treated, there was evidence of biofilm formation on DGT membranes. However, it was demonstrated that the biofilm interference with DGT measurements was negligible. Data found in this work show that total concentrations of Cd, Cu, Pb, Ni, and Zn in seawater samples collected at sites GA-1 and EM-1 in two campaigns were below 0.33, 1.67, 0.47, 0.70, 2.86 ng mL(-1) respectively. For the first time, labile levels of Cd, Cu, Pb, Ni, and Zn in an area under the influence of oil production were determined. DGT measurements allowed the verification of the effects of temporal variation on levels of Zn and Ni. There were no effects of spatial variations on levels of Cd, Cu, Ni, Pb, and Zn at the four studied sites, suggesting no contamination of these metals at the northeastern Brazilian coastal area investigated in this work. Copyright © 2014. Published by Elsevier B.V.

  15. Investigation of fatigue behavior of Pb(Zr0.45Ti0.55)O3 thin films under asymmetric polarization switching

    Science.gov (United States)

    Zhu, Hui; Chen, Yueyuan; Chu, Daping; Feng, Shiwei; Zhang, Yingqiao; Wang, Pengfei

    2016-09-01

    The fatigue of lead zirconate titanate (PZT) thin films was measured under repetitive switching using asymmetric square waves. The remnant polarization and coercive voltage were found to present regular changes in the initial 10 s, independent of the asymmetry or frequency of switching waves. We attributed the change to the relaxation of stress in the film and identified a coercive voltage V 0 of 0.6 V for the stress-free film. By comparing the coercive voltage and V 0, we found that a built-in electric field was induced by asymmetric switching, where the direction and magnitude were dependent on the degree of waveform asymmetry. Furthermore, the fatigue speed was suggested to be closely related to the generation rate of oxygen vacancies. It was confirmed by our result that a faster decay of remnant polarization can be obtained by applying square waves with a higher degree of asymmetry or symmetry of square waves with a lower frequency.

  16. Optical and thermal investigation of GeO2–PbO thin films doped with Au and Ag nanoparticles

    International Nuclear Information System (INIS)

    Carvalho, E.A.; Carmo, A.P.; Bell, M.J.V.; Anjos, V.; Kassab, L.R.P.; Silva, D.M. da

    2012-01-01

    The present work reports on the thermo-optical study of germanate thin films doped with Au and Ag nanoparticles. Transmission Electron Microscopy images, UV–visible absorption and Micro-Raman scattering evidenced the presence of nanoparticles and the formation of collective excitations, the so called surface plasmons. Moreover, the effects of the metallic nanoparticles in the thermal properties of the films were observed. The thermal lens technique was proposed to evaluate the Thermal Diffusivity (D) of the samples. It furnishes superficial spatial resolution of about 100 μm, so it is appropriate to study inhomogeneous samples. It is shown that D may change up to a factor 3 over the surface of a film because of the differences in the nanoparticles concentration distribution.

  17. Pulsed laser deposition of Pb(Zr0.52Ti0.48)O3 thin film on cobalt ferrite nano-seed layered Pt(111)/Si substrate: effect of oxygen pressure

    Science.gov (United States)

    Khodaei, M.; Seyyed Ebrahimi, S. A.; Park, Yong Jun; Song, Seungwoo; Jang, Hyun Myung; Son, Junwoo; Baik, Sunggi

    2014-07-01

    The effect of oxygen pressure during pulsed laser deposition of Pb(Zr0.52Ti0.48)O3 (PZT) thin films on CoFe2O4 nano-seed layered Pt(111)/Si substrate was investigated. The PZT film deposited at oxygen pressure lower than 25 mTorr is identified as both perovskite and pyrochlore phases and the films deposited at high oxygen pressure (50-100 mTorr) show the single-phase perovskite PZT that has a perfect (111)-orientation. In addition, the film deposited at PO2 of 50 mTorr has a uniform surface morphology, whereas the film deposited at PO2 of 100 mTorr has a non-uniform surface morphology and more incompacted columnar cross-section microstructure. The polarization of film deposited at 100 mTorr is higher than that deposited at 50 mTorr, but shift of the hysteresis loop along the electrical field axis in the film deposited at PO2 of 100 mTorr is larger than that of the film deposited at PO2 of 50 mTorr.

  18. Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr0.45Ti0.55O3 thin films on silicon in relation to grain tilt

    Directory of Open Access Journals (Sweden)

    Evert P Houwman, Minh D Nguyen, Matthijn Dekkers and Guus Rijnders

    2013-01-01

    Full Text Available Piezoelectric thin films of PbZr0.45Ti0.55O3 were grown on Si substrates in four different ways, resulting in different crystalline structures, as determined by x-ray analysis. The crystalline structures were different in the spread in tilt angle and the in-plane alignment of the crystal planes between different grains. It is found that the deviations of the ferroelectric polarization loop from that of the ideal rectangular loop (reduction of the remanent polarization with respect to the saturation polarization, dielectric constant of the film, slanting of the loop, coercive field value all scale with the average tilt angle. A model is derived based on the assumption that the tilted grain boundaries between grains affect the film properties locally. This model describes the observed trends. The effective piezoelectric coefficient d33,eff shows also a weak dependence on the average tilt angle for films grown in a single layer, whereas it is strongly reduced for the films deposited in multiple layers. The least affected properties are obtained for the most epitaxial films, i.e. grown on a SrTiO3 epitaxial seed layer, by pulsed laser deposition. These films are intrinsically stable and do not require poling to acquire these stable properties.

  19. Multiferroic magnetoelectric coupling effect of bilayer La1.2Sr1.8Mn2O7/PbZr0.3Ti0.7O3 complex thin film

    Science.gov (United States)

    Liang, K.; Zhou, P.; Ma, Z. J.; Qi, Y. J.; Mei, Z. H.; Zhang, T. J.

    2017-05-01

    Magnetoelectric (ME) coupling effect of 2-2-type ferromagnetic/ferroelectric bi-layer multiferroic epitaxial thin film (La1.2Sr1.8Mn2O7/PbZr0.3Ti0.7O3, LSMO/PZT) on SrRuO3 (SRO) substrate is investigated systematically by using Landau-Ginzburg-Devonshire (LGD) thermodynamic theory and modified constitutive equations. The calculating results clarify the detail relationships between ME coupling response and the residual strain, the volume fraction of constituent phases, the interface coupling coefficients, the magnetic field and the temperature. It also shows that improved ME coupling response can be modulated by these parameters. External magnetic fields (H1) induced ME coupling effect could be enhanced around Curie Temperature (Tc) of ferromagnetic phase and ME voltage coefficient (αE31) approaches a maximum at H1 ∼ 4.5 kOe near Tc. The remarkable variations of ME coupling response can be used to provide useful guidelines on the design of multifunctional devices.

  20. Optical characterization and bandgap engineering of flat and wrinkle-textured FA0.83Cs0.17Pb(I1-xBrx)3 perovskite thin films

    Science.gov (United States)

    Tejada, A.; Braunger, S.; Korte, L.; Albrecht, S.; Rech, B.; Guerra, J. A.

    2018-05-01

    The complex refractive indices of formamidinium cesium lead mixed-halide [FA0.83Cs0.17Pb(I1- xBrx)3] perovskite thin films of compositions ranging from x = 0 to 0.4, with both flat and wrinkle-textured surface topographies, are reported. The films are characterized using a combination of variable angle spectroscopic ellipsometry and spectral transmittance in the wavelength range of 190 nm to 850 nm. Optical constants, film thicknesses and roughness layers are obtained point-by-point by minimizing a global error function, without using optical dispersion models, and including topographical information supplied by a laser confocal microscope. To evaluate the bandgap engineering potential of the material, the optical bandgaps and Urbach energies are then accurately determined by applying a band fluctuation model for direct semiconductors, which considers both the Urbach tail and the fundamental band-to-band absorption region in a single equation. With this information, the composition yielding the optimum bandgap of 1.75 eV for a Si-perovskite tandem solar cell is determined.

  1. Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

    International Nuclear Information System (INIS)

    Zhang Wenqi; Li Aidong; Shao Qiyue; Xia Yidong; Wu Di; Liu Zhiguo; Ming Naiben

    2008-01-01

    Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with large remanent polarization and SrBi 2 Ta 2 O 9 (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages , bilayered Pb(Zr 0.52 Ti 0.48 )O 3 /SrBi 2 Ta 2 O 9 (PZT/SBT) thin films were fabricated on Pt/TiO 2 /SiO 2 /Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P r ) of 18.37 μC/cm 2 than pure SBT and less polarization fatigue up to 1 x 10 9 switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications

  2. Investigation of the epitaxial growth of Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3} thin films and their application in ferroelectric superconducting field effect transistors; Untersuchung des epitaktischen Wachstums duenner Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3}-Schichten und ihre Anwendung in ferroelektrischen supraleitenden Feldeffektransistoren

    Energy Technology Data Exchange (ETDEWEB)

    Aidam, R

    1999-02-01

    The influences of the polarization of ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) films on the properties of YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) films were investigated in ferroelectric superconducting field effect transistors (FSuFETs). First the epitaxial growth of PZT films deposited by reactive sputtering in an argon/oxygen atmosphere was investigated. SrTiO{sub 3} single crystals and YBCO thin films proved as suitable substrates. The lead content of the PZT films depended sensitively on the deposition temperature T{sub s} and the gas pressure. By using a high pressure of 0.26 mbar the correct stoichiometry could be achieved up to an maximum T{sub s} of 580 C. Above a minimum T{sub s} of 540 C the ferroelectric perovskite structure grew. In the optimum temperature range between 560 C and 580 C the films grew with a minimum mosaic spread of {delta}{omega} < 0.3 and a small amount of less than 1% of paraelectric phase. The best ferroelectric properties could be obtained for films with the highest degree of epitaxy and the correct stoichiometry. The maximum remanent polarization amounted P{sub r} = 61 {mu}C/cm{sup 2} and the coercive field E{sub C} was 150 kV/cm at 77 K. The breakdown field was four to five times larger than E{sub C}. Fatigue studies revealed a loss of switchable polarization of 30% after 10{sup 8} cycles at 77 K, whereas loss of retention and the effect of ageing were negligible. During the process of oxidation of the heterostructure at 400 C and an oxygen pressure of 800 mbar a reaction at the PZT/YBCO interface was observed, which lead to a degradation of the transport properties of the superconductor. This reaction could be avoided by a thin SrTiO{sub 3} buffer layer without disturbing the ferroelectric hysteresis essentially.

  3. Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Minh D. Nguyen

    2016-08-01

    Full Text Available Pb0.9La0.1(Zr0.52Ti0.48O3 (PLZT relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco of 13.7 J/cm3 together with a high energy efficiency (η of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48O3 ferroelectric thin films (Ureco = 9.2 J/cm3 and η = 56.4% which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

  4. RF properties of superconducting Pb electroplated onto Cu

    International Nuclear Information System (INIS)

    Delayen, J.R.

    1988-01-01

    The properties of Pb as a superconducting material for high power rf applications are reviewed. The most common method of producing Pb superconducting resonators, which is by electrodeposition of a thin layer on a Cu substrate, is described, and some suggestions for further development are presented. 56 references, 11 figures, 1 table

  5. Lead (Pb) Air Pollution

    Science.gov (United States)

    ... Regional Offices Labs and Research Centers Lead (Pb) Air Pollution Contact Us Share As a result of EPA's ... and protect aquatic and terrestrial ecosystems. Lead (Pb) Air Pollution Basic Information How does lead get in the ...

  6. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  7. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  8. New lithium-ion conducting perovskite oxides related to (Li, La)TiO3

    Indian Academy of Sciences (India)

    Unknown

    We describe the synthesis and lithium-ion conductivity of new perovskite-related oxides ... work on lithium-ion conducting perovskite oxides containing d0 cations. Keywords. ..... On the other hand, Nb/Ta compounds show a higher conductivity.

  9. Investigation of the structural, optical and dielectric properties of highly (1 0 0)-oriented (Pb{sub 0.60}Ca{sub 0.20}Sr{sub 0.20})TiO{sub 3} thin films on LaNiO{sub 3} bottom electrode

    Energy Technology Data Exchange (ETDEWEB)

    Pontes, D.S.L. [Laboratorio Interdisciplinar de Eletroquimica e Cerâmica, Department of Chemistry, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); Pontes, F.M., E-mail: fenelon@fc.unesp.br [Department of Chemistry, Universidade Estadual Paulista, P.O. Box 473, 17033-360 Bauru, São Paulo (Brazil); Chiquito, A.J. [NanO LaB, Transporte Eletrônico em Nanoestruturas, Department of Physics, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); Longo, E. [Laboratorio Interdisciplinar de Eletroquimica e Cerâmica, Department of Chemistry, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); Institute of Chemistry, Universidade Estadual Paulista, Araraquara, São Paulo (Brazil)

    2014-07-01

    Highlights: • Highly (h 0 0) oriented LNO and PCST thin films were grown on LAO(1 0 0) substrate. • PCST/LNO/LAO structure shown classic ferroelectric–paraelectric phase transition. • PCST/LNO/LAO structure shows superior dielectric properties. • PCST/LAO films showed a direct allowed optical transition. - Abstract: Highly (1 0 0)-oriented Pb{sub 0.60}Ca{sub 0.20}Sr{sub 0.20}TiO{sub 3}/LNO/LAO structure was fabricated using a chemical deposition process via spin-coating technique. XRD revealed that both LNO and Pb{sub 0.60}Ca{sub 0.20}Sr{sub 0.20}TiO{sub 3} films grown on LAO(1 0 0) substrate and LNO/LAO(1 0 0) structure were crystallized to be highly (h 0 0)-oriented, respectively. AFM images revealed smooth surfaces, spherical-shaped grains and a crack-free surface with a roughness of about 3–7 nm. The tetragonal perovskite phase was confirmed by Raman spectroscopy for Pb{sub 0.60}Ca{sub 0.20}Sr{sub 0.20}TiO{sub 3}/LNO/LAO and Pb{sub 0.60}Ca{sub 0.20}Sr{sub 0.20}TiO{sub 3}/LAO structures. The optical transmittance of 340 nm thick Pb{sub 0.60}Ca{sub 0.20}Sr{sub 0.20}TiO{sub 3} films on a LAO(1 0 0) substrate exhibited an average transmittance above 80% in the wavelength range of 500–1000 nm and an optical band gap E{sub g} of 3.56 and 2.87 eV for the direct and indirect transition processes, respectively. The Au/Pb{sub 0.60}Ca{sub 0.20}Sr{sub 0.20}TiO{sub 3}/LNO/LAO structure has a hysteresis loop with remnant polarization, P{sub r}, of 12 μC/cm{sup 2}, and a coercive field, E{sub c}, of 46 kV/cm for an electric field at 370 kV/cm along with a dielectric constant over 1200.

  10. Directional solidification of filamentary shapes of Pb--Cd and Pb--Sn eutectic alloys

    International Nuclear Information System (INIS)

    Dhindaw, B.K.; Verhoeven, J.D.; Spencer, C.R.; Gibson, E.D.

    1978-01-01

    Eutectic alloys of Pb--Cd and Pb--Sn were directionally solidified as thin filamentary strips contained in stainless steel and quartz capillaries. As the solidification rate increased the filament width, w, had to be reduced to maintain complete alignment of the lamellae clear across the filament. It was determined that in order to achieve complete alignment the ratio of filament width to lamellar spacing, w/lambda had to be less than about 30. Experiments were carried out at rates of 2-400 μm/s and at temperature gradients of 130 and 320 0 C/cm

  11. Investigation of the RF pulse modulated plasma jet system during the deposition of Pb(Zr.sub.x./sub.Ti.sub.1-x./sub.)O.sub.3./sub. thin films on polymer substrates

    Czech Academy of Sciences Publication Activity Database

    Hubička, Zdeněk; Čada, Martin; Adámek, P.; Virostko, Petr; Olejníček, Jiří; Deyneka, Alexander; Jastrabík, Lubomír; Jurek, Karel; Suchaneck, G.; Guenther, M.; Gerlach, G.; Boháč, Petr

    2005-01-01

    Roč. 200, - (2005), s. 940-946 ISSN 0257-8972 R&D Projects: GA AV ČR(CZ) KJB1010302 Institutional research plan: CEZ:AV0Z10100522 Keywords : : PZT thin films * plasma jet * Langmuir probe * plasma impedance Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.646, year: 2005

  12. Enhanced dielectric nonlinearity in epitaxial Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chunrui, E-mail: chunrui.ma@gmail.com, E-mail: jwu@ku.edu; Wu, Judy, E-mail: chunrui.ma@gmail.com, E-mail: jwu@ku.edu [Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas, 66045 (United States); Ma, Beihai [Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Mi, Shao-Bo [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi' an Jiaotong University, Xi' an 710049 (China); Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Liu, Ming [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi' an Jiaotong University, Xi' an 710049 (China)

    2014-04-21

    High quality c-axis oriented epitaxial Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} films were fabricated using pulsed laser deposition on (001) LaAlO{sub 3} substrates with conductive LaNiO{sub 3} buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices.

  13. Superdeformation in Pb isotopes

    International Nuclear Information System (INIS)

    Naz, Tabassum; Ahmad, Shakeb

    2017-01-01

    The Relatvistic Hartree-Bogoliubov (RHB) theory is used to explore the structure of superdeformed (SD) 190,212 Pb isotopes using the non-linear NL3* and density dependent (DD-ME2, DD-PC1) interactions. We have studied the the excitation energy, the potential depth and the deformation of these Pb isotopes

  14. Exploring Polaronic, Excitonic Structures and Luminescence in Cs4PbBr6/CsPbBr3.

    Science.gov (United States)

    Kang, Byungkyun; Biswas, Koushik

    2018-02-15

    Among the important family of halide perovskites, one particular case of all-inorganic, 0-D Cs 4 PbBr 6 and 3-D CsPbBr 3 -based nanostructures and thin films is witnessing intense activity due to ultrafast luminescence with high quantum yield. To understand their emissive behavior, we use hybrid density functional calculations to first compare the ground-state electronic structure of the two prospective compounds. The dispersive band edges of CsPbBr 3 do not support self-trapped carriers, which agrees with reports of weak exciton binding energy and high photocurrent. The larger gap 0-D material Cs 4 PbBr 6 , however, reveals polaronic and excitonic features. We show that those lattice-coupled carriers are likely responsible for observed ultraviolet emission around ∼375 nm, reported in bulk Cs 4 PbBr 6 and Cs 4 PbBr 6 /CsPbBr 3 composites. Ionization potential calculations and estimates of type-I band alignment support the notion of quantum confinement leading to fast, green emission from CsPbBr 3 nanostructures embedded in Cs 4 PbBr 6 .

  15. Research Update: Enhancement of figure of merit for energy-harvesters based on free-standing epitaxial Pb(Zr0.52Ti0.480.99Nb0.01O3 thin-film cantilevers

    Directory of Open Access Journals (Sweden)

    Minh D. Nguyen

    2017-07-01

    Full Text Available All-oxide free-standing cantilevers were fabricated with epitaxial (001-oriented Pb(Zr0.52Ti0.48O3 (PZT and Pb(Zr0.52Ti0.480.99Nb0.01O3 (PNZT as piezoelectric layers and SrRuO3 electrodes. The ferroelectric and piezoelectric hysteresis loops were measured. From the zero-bias values, the figure-of-merits (FOMs for piezoelectric energy harvesting systems were calculated. For the PNZT cantilever, an extremely large value FOM = 55 GPa was obtained. This very high value is due to the large shifts of the hysteresis loops such that the zero-bias piezoelectric coefficient e31f is maximum and the zero-bias dielectric constant is strongly reduced compared to the value in the undoped PZT device. The results show that by engineering the self-bias field the energy-harvesting properties of piezoelectric systems can be increased significantly.

  16. Research Update: Enhancement of figure of merit for energy-harvesters based on free-standing epitaxial Pb(Zr0.52Ti0.48)0.99Nb0.01O3 thin-film cantilevers

    Science.gov (United States)

    Nguyen, Minh D.; Houwman, Evert; Dekkers, Matthijn; Schlom, Darrell; Rijnders, Guus

    2017-07-01

    All-oxide free-standing cantilevers were fabricated with epitaxial (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) and Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PNZT) as piezoelectric layers and SrRuO3 electrodes. The ferroelectric and piezoelectric hysteresis loops were measured. From the zero-bias values, the figure-of-merits (FOMs) for piezoelectric energy harvesting systems were calculated. For the PNZT cantilever, an extremely large value FOM = 55 GPa was obtained. This very high value is due to the large shifts of the hysteresis loops such that the zero-bias piezoelectric coefficient e31f is maximum and the zero-bias dielectric constant is strongly reduced compared to the value in the undoped PZT device. The results show that by engineering the self-bias field the energy-harvesting properties of piezoelectric systems can be increased significantly.

  17. Impact of crystallisation processes on depth profile formation in sol-gel PbZr.sub.0·52./sub.Ti.sub.0·48./sub.O.sub.3./sub. thin films

    Czech Academy of Sciences Publication Activity Database

    Aulika, I.; Mergen, S.; Bencan, A.; Zhang, Q.; Dejneka, Alexandr; Kosec, M.; Kundzins, K.; Demarchi, D.; Civera, P.

    2013-01-01

    Roč. 112, č. 1 (2013), s. 53-58 ISSN 1743-6753 R&D Projects: GA TA ČR TA01010517; GA ČR GAP108/12/1941 Institutional research plan: CEZ:AV0Z10100522 Keywords : compositional and optical gradien * PZT * spectroscopic ellipsometry * crystallisation proces * sol-gel * XRD * thin films * depth profile * spectroscopic elipsometry Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.107, year: 2013

  18. Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg{sub 1/3}Nb{sub 2/3}O{sub 3}){sub 0.67}-(PbTiO{sub 3}){sub 0.33} thin films on (001) SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Boota, Muhammad [MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Engineering Department, University of Rome “ROMA TRE”, Via della Vasca Navale 79, 00146 Rome (Italy); Houwman, Evert P., E-mail: e.p.houwman@utwente.nl; Nguyen, Minh D.; Rijnders, Guus [MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Lanzara, Giulia [Engineering Department, University of Rome “ROMA TRE”, Via della Vasca Navale 79, 00146 Rome (Italy)

    2016-05-15

    The pulsed laser deposition process of 300 nm thick films of Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}){sub 0.67}-(PbTiO{sub 3}){sub 0.33} on (001)-oriented SrTiO{sub 3} was studied by varying deposition pressure, substrate deposition temperature, laser fluence on the target and target-substrate distance. Perovskite phase pure, (001)-oriented, epitaxial smooth films were obtained in a narrow range of deposition parameters. The ferroelectric and dielectric properties of films fabricated within this parameter range still vary significantly. This shows the sensitivity of the system for growth conditions. The best film has a polarization value close to that expected for a (001) poled, stress free single crystal film. All films show deposition conditions dependent variations in the self-bias field. The self-bias is very stable during long cycling for films made at optimum deposition conditions. The piezoelectric coefficients of the films are strongly reduced with respect to bulk single crystal values due to the film clamping. The properties variations are ascribed to changes in the grain boundary properties in which film defects are expected to accumulate. Notably slight off-stoichiometry may cause localized screening charges, affecting specifically the polarization and dielectric constant.

  19. Thin films of molecular materials synthesized from C{sub 32}H{sub 20}N{sub 10}M (M Co, Pb, Fe): Film formation, electrical and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, A.P. 70-360, Coyoacan, 04510 Mexico, D.F. (Mexico); Sanchez Vergara, M.E., E-mail: elena.sanchez@anahuac.mx [Coordinacion de Ingenieria Mecatronica, Facultad de Ingenieria, Universidad Anahuac del Norte, Avenida Lomas Anahuac 46, Colonia Lomas Anahuac, 52786, Huixquilucan, Estado de Mexico (Mexico); Garcia Montalvo, V. [Instituto de Quimica, Universidad Nacional Autonoma de Mexico, Circuito Exterior, Ciudad Universitaria, 04510 Mexico, D.F. (Mexico); Ortiz, A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, A.P. 70-360, Coyoacan, 04510 Mexico, D.F. (Mexico); Alvarez, J.R. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Ciudad de Mexico, Calle del Puente 222, Colonia Ejidos de Huipulco, 14380 Mexico, D.F. (Mexico)

    2010-03-15

    In this work, the synthesis of molecular materials formed from metallic phthalocyanines and 1,4-phenylenediamine is reported. The powder and thin film ({approx}80-115 nm thickness) samples of the synthesized materials, deposited by vacuum thermal evaporation, show the same intra-molecular bonds in the IR spectroscopy studies, which suggests that the thermal evaporation process does not alter these bonds. The morphology of the deposited films was studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and their optical and electrical properties were studied as well. The optical parameters have been investigated using spectrophotometric measurements of transmittance in the wavelength range 200-1200 nm. The absorption spectra recorded in the UV-vis region for the deposited samples showed two bands, namely the Q and Soret bands. The optical activation energy was calculated and found to be 3.41 eV for the material with cobalt, 3.34 eV for the material including lead and 3.5 eV for the material with iron. The effect of temperature on conductivity was measured for the thin films and the corresponding conduction processes are discussed in this work.

  20. Synthesis of PbTe nanocubes, worm-like structures

    Indian Academy of Sciences (India)

    ... the optical bandgap energies of 1.61, 1.23 and 1.01 eV, respectively. Photoconductivity measurement shows that the prepared nanocrystalline PbTe thin films of different morphology exhibits good response. This structure induced change in optical properties may have potential applications in optoelectronics devices.

  1. Electrical properties and x-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin films

    Science.gov (United States)

    Tang, M. H.; Zhang, J.; Xu, X. L.; Funakubo, H.; Sugiyama, Y.; Ishiwara, H.; Li, J.

    2010-10-01

    (1-x)Pb(Zr0.4,Ti0.6)O3-(x)Bi(Zn0.5,Ti0.5)O3 (PZT-BZT) (x =0, 0.03, 0.05, 0.08, and 0.1) films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition using spin-coating. All samples showed highly (111) oriented perovskite phase and no other phase was observed. The ferroelectric properties of PZT-BZT films were systematically investigated as a function of the content x of the BZT solution. It is found that BZT doping in PZT films could greatly enhance the remnant polarization (Pr), as well as improve the fatigue property. In a 3 wt % BZT-doped PZT film, the 2Pr and the coercive field (Ec) are 90 μC/cm2 and 95 kV/cm at 10 kHz, respectively, at an electric field of 500 kV/cm, and the leakage current density is less than 1×10-7 A/cm2. The impact of BZT doping on the structure of PZT has been investigated by x-ray photoelectron spectroscopy.

  2. Fabrication and orientation control of highly cation-ordered epitaxial PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} thin films on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Chopra, Anuj, E-mail: anujchopraiitm@gmail.com [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Alexe, Marin [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Hesse, Dietrich [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)

    2015-01-28

    Highly cation-ordered (100) and (110)-oriented PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} (PST) films were deposited on buffered Si (100) substrates using pulsed laser deposition. Switching of crystal orientation from (100) to (110) was achieved by replacing the Si (100)/ZrO2:Y2O3 (100)/CeO2 (100)/LaNiO3 (100)/PST (100) heterostructure with Si (100)/ZrO2:Y2O3 (YSZ) (100)/SrRuO3 (110)/PST (110). The out-of-plane and in-plane crystal orientation and internal microstructure of (001) and (110) PST films were analyzed in detail by X-ray diffraction, pole figure measurements, and transmission electron microscopy. XRD superstructure reflections indicate that both (100) and (110) PST films are highly cation-ordered and transmission electron microscopy measurements show nano-domains of 15 nm size. The electrical measurements show that the PST films are ferroelectric and that the ferroelectric properties are linked to the microstructure. We have demonstrated the successful integration of PST films on Si substrates with control on growth orientation; this approach can be extended to other oxides to be integrated on silicon substrates for future device applications.

  3. Influences of annealing temperature on characteristics of composite materials consisting of multi-walled carbon nanotubes and Pb(Zr0.52Ti0.48)O3 thin films

    International Nuclear Information System (INIS)

    Kwak, Jin Ho; Han, Jin Kyu; Cho, Sam Yeon; Bu, Sang Don

    2012-01-01

    We report the synthesis and the characterization of composite materials consisting of multi-walled carbon nanotubes and Pb(Zr 0.52 Ti 0.48 )O 3 (CNT-PZT) in a film structure. The CNT-PZT films were prepared by using a sol-gel process, a spin-coating method and a rapid thermal annealing process. CNT bundles in 2-methoxyethanol solution were mixed with a 7-wt% PZT sol-gel solution. The CNT-PZT solution was deposited onto (111) Pt/Ti/SiO 2 /Si substrates by spin-coating at 3000 rpm for 60 s and was then pyrolyzed. The samples were annealed at various temperatures in an oxygen atmosphere for crystallization. The morphological, structural and electrical properties of CNT-PZT composite films were studied with a field-emission scanning electron microscope, X-ray diffraction and polarization-voltage hysteresis loops, respectively. We found that, during the annealing process, the thickness of CNT-PZT films dramatically decrease, especially in the range of 500 to 600 .deg. C, which may be related with the loss of CNTs in that temperature region due to burning. The CNTs also affect the orientation of and the number of defects in the PZT films, which change the ferroelectric properties of the films.

  4. Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb{sub 0.95}La{sub 0.05}Zr{sub 0.54}Ti{sub 0.46}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Batra, Vaishali [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States); Ramana, C.V. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States)

    2016-08-30

    Highlights: • Influence of post-deposition annealing temperature (T{sub a} = 550 and 750 °C) on the chemical valence state and crystalline quality of PLZT thin films was investigated. • XPS analyses demonstrated the shift in binding energies of the constituent atoms which indicated change in chemical state with the change in T{sub a}. • Raman spectra revealed shift in optical modes with the change in T{sub a} indicating the change in phase and crystallinity in the films. • Higher T{sub a} (750 °C) resulted in PLZT films with perovskite structure, nanocrystalline morphology, and better chemical homogeneity. - Abstract: We report the effect of post deposition annealing temperature (T{sub a} = 550 and 750 °C) on the surface morphology, chemical bonding and structural development of lanthanum doped lead zirconate titanate (Pb{sub 0.95}La{sub 0.05}Zr{sub 0.54}Ti{sub 0.46}O{sub 3}; referred to PLZT) thin films prepared using chemical solution deposition method. Atomic force microscopy demonstrates formation of nanocrystallites in the film annealed at T{sub a} = 750 °C. X-ray photoelectron spectroscopy (XPS) analyses indicate that the binding energies (BE) of the Pb 4f, Zr 3d, and Ti 2p doublet experience a positive energy shift at T{sub a} = 750 °C, whereas the BE of O 1s and La 3d doublet show a negative shift with respect to the BE of the films annealed at T{sub a} = 750 °C. Thermal induced crystallization and chemical modification is evident from XPS results. The Ar+ sputtering of the films reveals change in oxidation state and chemical bonding between the constituent atoms, with respect to T{sub a}. Raman spectroscopy used to study phonon-light interactions show shift in longitudinal and transverse optical modes with the change in T{sub a}, confirming the change in phase and crystallinity of these films. The results suggest annealing at T{sub a} = 750 °C yield crystalline perovskite PLZT films, which is essential to obtain photovoltaic response from

  5. Structural characterization of lead sulfide thin films by means of X ...

    Indian Academy of Sciences (India)

    Administrator

    This detector can operate at any temperature between 77 and 300 K (Johnson 1984). The possibility of using very thin (20–60 nm) chemically deposited PbS films as solar control coatings have been discussed by many workers. (Nair et al 1989). Analyses of the mechanism of photo- conductivity in PbS thin films are also ...

  6. Charmonium production in pp, pPb and PbPb collisions with CMS

    International Nuclear Information System (INIS)

    Ståhl, Andre Govinda

    2017-01-01

    The LHC Run 1 results of the analysis of charmonium production in pp, pPb and PbPb collisions with the CMS experiment are reported. The coherent J/ψ photoproduction cross section is measured as a function of rapidity in ultra-peripheral PbPb collisions at 2.76 TeV. The forward-backward ratio of prompt J/ψ yields in pPb collisions at 5.02 TeV is presented as a function of the event activity and p T . The nuclear modification factor of prompt J/ψ in PbPb collisions at 2.76 TeV is shown as a function of rapidity, centrality and p T . Finally, the ratio of ψ (2 S ) to J/ψ yields in PbPb collisions with respect to pp collisions at 2.76 TeV is analysed in different rapidity and centrality bins. (paper)

  7. Pb migration in the OKLO uranium deposit

    International Nuclear Information System (INIS)

    Gancarz, A.J.; Curtis, D.B.

    1979-01-01

    U-Pb and Pb isotopic data are presented which indicate that Pb is lost from host uraninite by diffusion, and that not only in situ uranogenic Pb but also the initial Pb is lost by diffusion. The conglomerate underlying the U deposit contains excess Pb and is both a transport zone and the repository for the Pb. 2 figures

  8. X-ray spectroscopic study of amorphous and polycrystalline PbO films, α-PbO, and β-PbO for direct conversion imaging.

    Science.gov (United States)

    Qamar, A; LeBlanc, K; Semeniuk, O; Reznik, A; Lin, J; Pan, Y; Moewes, A

    2017-10-13

    We investigated the electronic structure of Lead Oxide (PbO) - one of the most promising photoconductor materials for direct conversion x-ray imaging detectors, using soft x-ray emission and absorption spectroscopy. Two structural configurations of thin PbO layers, namely the polycrystalline and the amorphous phase, were studied, and compared to the properties of powdered α-PbO and β-PbO samples. In addition, we performed calculations within the framework of density functional theory and found an excellent agreement between the calculated and the measured absorption and emission spectra, which indicates high accuracy of our structural models. Our work provides strong evidence that the electronic structure of PbO layers, specifically the width of the band gap and the presence of additional interband and intraband states in both conduction and valence band, depend on the deposition conditions. We tested several model structures using DFT simulations to understand what the origin of these states is. The presence of O vacancies is the most plausible explanation for these additional electronic states. Several other plausible models were ruled out including interstitial O, dislocated O and the presence of significant lattice stress in PbO.

  9. Transformation of Sintered CsPbBr3 Nanocrystals to Cubic CsPbI3 and Gradient CsPbBrxI3-x through Halide Exchange.

    Science.gov (United States)

    Hoffman, Jacob B; Schleper, A Lennart; Kamat, Prashant V

    2016-07-13

    All-inorganic cesium lead halide (CsPbX3, X = Br(-), I(-)) perovskites could potentially provide comparable photovoltaic performance with enhanced stability compared to organic-inorganic lead halide species. However, small-bandgap cubic CsPbI3 has been difficult to study due to challenges forming CsPbI3 in the cubic phase. Here, a low-temperature procedure to form cubic CsPbI3 has been developed through a halide exchange reaction using films of sintered CsPbBr3 nanocrystals. The reaction was found to be strongly dependent upon temperature, featuring an Arrhenius relationship. Additionally, film thickness played a significant role in determining internal film structure at intermediate reaction times. Thin films (50 nm) showed only a small distribution of CsPbBrxI3-x species, while thicker films (350 nm) exhibited much broader distributions. Furthermore, internal film structure was ordered, featuring a compositional gradient within film. Transient absorption spectroscopy showed the influence of halide exchange on the excited state of the material. In thicker films, charge carriers were rapidly transferred to iodide-rich regions near the film surface within the first several picoseconds after excitation. This ultrafast vectorial charge-transfer process illustrates the potential of utilizing compositional gradients to direct charge flow in perovskite-based photovoltaics.

  10. Spectroscopy of 189Pb

    International Nuclear Information System (INIS)

    Baxter, A.M.; Byrne, A.P.; Dracoulis, G.D.; Janssens, R.V.F.; Blumenthal, D.J.; Brown, T.; Carpenter, M.P.; Conticchio, L.F.; Davids, C.N.; Khoo, T.L.; Lauritsen, T.; Nisius, D.

    2000-01-01

    Full text: Recent studies of the very neutron-deficient lead isotopes 188 , 190 Pb have shown evidence for competing structures which may be attributed to the coexistence of spherical, weakly-deformed oblate and moderately-deformed prolate shapes. These studies have relied strongly on the observation of isomers to distinguish the properties of the states concerned. However, prior to the present work, information on the properties of the yrast and near-yrast states in the neighbouring, odd-A isotope 189 Pb was tentative and fragmentary. In an experiment at the Argonne National Laboratory, prompt gamma-gamma coincidence data on 189 Pb were obtained with the 158 Gd( 36 Ar,5n) reaction. In this experiment, mass identification of the gamma-radiation was provided by coincident detection of recoiling evaporation residues in the ANL Fragment Mass Analyser. In a second experiment, at the Australian National University, using the 164 Er( 29 Si,4n) reaction, an isomer with a 32-μs lifetime was identified in 189 Pb and the main features of the level scheme below this isomer were established. The results will be discussed in the light of the structures identified in the heavier odd-mass lead isotopes and in the neighbouring even-mass isotopes

  11. Jet Fragmentation in p+p, p+Pb and Pb+Pb at ATLAS

    CERN Document Server

    Slovak, Radim; The ATLAS collaboration

    2017-01-01

    Jets are an important tool to study the hot, dense matter produced in Pb+Pb collisions at the LHC. Due to the loss of some of the jet’s energy outside the jet cone, jet rates have been found to be reduced by approximately a factor of two, in the most central events and over a wide kinematic range. In order to understand precisely how the jets are modified, it is important to measure how the jet momentum is carried by its fragmentation products. The longitudinal momentum fraction of charged particles in jets from Pb+Pb, p+Pb, and p+p collisions have been measured using the ATLAS detector. Proton-proton and p+Pb collisions provide necessary baseline measurements for quantifying the modifications in Pb+Pb collisions. In Run 1, ATLAS collected samples of p+p and Pb+Pb collisions at a center of mass energy of 2.76 TeV and a sample of p+Pb collisions at 5.02 TeV. In Run 2, large samples of p+p and Pb+Pb collisions at 5.02 TeV have been collected providing a complete set of collision systems at 5.02 TeV. In this t...

  12. Primordial Pb, radiogenic Pb and lunar soil maturity

    International Nuclear Information System (INIS)

    Reed, G.W. Jr.; Jovanovic, S.

    1978-01-01

    The soil maturity index I/sub s//FeO does not apply to either 204 Pb/sub r/ or C/sub hyd/; both are directly correlated with the submicron Fe 0 (I/sub s/) content. They act as an index of soil maturity which is independent of soil composition. In contrast to primordial Pb, radiogenic Pb is lost during soil maturation. Radiogenic Pb is present in mineral grains and may be lost by solar wind sputtering (or volatilization) and not resupplied. 204 Pb coating grain surfaces acts as a reservoir to provide the 204 Pb being extracted in the Fe 0 formation process. Venting or some other volatile source may replenish the surface 204 Pb. 1 figure

  13. Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO

    Science.gov (United States)

    Samal, D.; Nakamura, H.; Takagi, H.

    2016-07-01

    A series of anti-perovskites including Sr3PbO are recently predicted to be a three-dimensional Dirac material with a small mass gap, which may be a topological crystalline insulator. Here, we report the epitaxial growth of Sr3PbO thin films on LaAlO3 using molecular beam epitaxy. X-ray diffraction indicates (001) growth of Sr3PbO, where [110] of Sr3PbO matches [100] of LaAlO3. Measurements of the Sr3PbO films with parylene/Al capping layers reveal a metallic conduction with p-type carrier density of ˜1020 cm-3. The successful growth of high quality Sr3PbO film is an important step for the exploration of its unique topological properties.

  14. First 226Ra- 210Pb dating of a young speleothem

    Science.gov (United States)

    Condomines, M.; Rihs, S.

    2006-10-01

    Whereas the method based on the decrease of excess 210Pb has already been used to date young (Age determination of recent cave deposits using excess 210Pb — A new technique, Geophys. Res. Lett. 20 (1993) 603-606.]), this paper presents the first dating of a speleothem through the 226Ra- 210Pb method. Dating of a young hydrothermal stalagmite from the Mt Cornadore cave (St Nectaire, French Massif Central) was made possible by the high 226Ra and negligible 210Pb contents of such carbonates, formed by precipitation from CO 2-rich thermal waters. ( 210Pb/ 226Ra) ratios regularly increase with depth along the axis of the 33 cm long stalagmite. The age-depth relationship can be interpreted by two main phases of growth, with high but variable axial growth rates of 5.3 mm/yr from 1909 to 1967, and 2.6 mm/yr from 1967 to 1989 (alternatively, the oldest phase can be subdivided in three episodes with growth rates varying from 2 to 7 mm/yr). Thin-section examination reveals the presence of numerous laminae, indicating infra-annual variations. We suggest that this fine layered structure might reflect short-term fluctuations in drip waters, possibly induced by near-surface mixing between thermal and ground waters, and ultimately linked to the pluviometry. A detailed examination of this laminated structure combined with 226Ra- 210Pb dating could thus provide a high-resolution record of local paleohydrological fluctuations.

  15. Strange hadron production in pp, pPb and PbPb collisions at LHC energies

    Energy Technology Data Exchange (ETDEWEB)

    Saraswat, Kapil; Singh, Venktesh [Banaras Hindu University, Department of Physics, Institute of Science, Varanasi (India); Shukla, Prashant [Bhabha Atomic Research Center, Nuclear Physics Division, Mumbai (India); Homi Bhabha National Institute, Anushakti Nagar, Mumbai (India); Kumar, Vineet [Bhabha Atomic Research Center, Nuclear Physics Division, Mumbai (India)

    2017-05-15

    We present a systematic analysis of transverse momentum (p{sub T}) spectra of the strange hadrons in different multiplicity events produced in pp collision at √(s) = 7 TeV, pPb collision at √(s{sub NN}) = 5.02 TeV and PbPb collision at √(s{sub NN}) = 2.76 TeV. Both the single and differential freeze-out scenarios of strange hadrons K{sup 0}{sub s}, Λ and Ξ{sup -} are considered while fitting using a Tsallis distribution which is modified to include transverse flow. The p{sub T} distributions of these hadrons in different systems are characterized in terms of the parameters, namely Tsallis temperature (T), power (n) and average transverse flow velocity (β). It is found that for all the systems, transverse flow increases as we move from lower to higher multiplicity events. In the case of the differential freeze-out scenario, the degree of thermalization remains similar for events of different multiplicity classes in all the three systems. The Tsallis temperature increases with the mass of the hadrons and also increases with the event multiplicity in pp and pPb system but shows little variation with the multiplicity in PbPb system. In the case of the single freeze-out scenario, the difference between small systems (pp, pPb) and PbPb system becomes more evident. The high-multiplicity PbPb events show higher degree of thermalization as compared to the events of pp and pPb systems. The trend of variation of the temperature in PbPb system with event multiplicity is opposite to what is found in the pp and pPb systems. (orig.)

  16. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  17. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  18. The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films

    International Nuclear Information System (INIS)

    Li Jianjun; Li Ping; Zhang Guojun; Yu Jun; Wu Yunyi; Wen Xinyi

    2011-01-01

    A series of PbZr 0.58 Ti 0.42 O 3 (PZT) thin films with various Bi 3.25 La 0.75 Ti 3 O 12 (BLT) buffer layer thicknesses were deposited on Pt/TiO 2 /SiO 2 /p-Si(100) substrates by RF magnetron sputtering. The X-ray diffraction measurements of PZT film and PZT/BLT multilayered films illustrate that the pure PZT film shows (111) preferential orientation, and the PZT/BLT films show (110) preferential orientation with increasing thickness of the BLT layer. There are no obvious diffraction peaks for the BLT buffer layer in the multilayered films, for interaction effect between the bottom BLT and top PZT films during annealing at the same time. From the surface images of field-emission scanning electron microscope, there are the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples. The growth direction and grain size have significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics of PZT and PZT/BLT films suggest that 30-nm-thick BLT is just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results with that of PZT/Pt/TiO 2 /SiO 2 /p-Si(100) basic structured film suggests that the buffer layer with an appropriate thickness can improve the ferroelectric properties of multilayered films greatly.

  19. Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

    Science.gov (United States)

    Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

    2017-12-13

    Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

  20. What causes Psi suppression in Pb+Pb Collisions?

    International Nuclear Information System (INIS)

    Vogt, R.

    1998-01-01

    A reexamination of hadronic comover scattering indicates that this mechanism cannot explain the observed ψ suppression in Pb+Pb interactions. The possibility of quark-gluon plasma formation is therefore considered. Implications for RHIC and LHC are also discussed. The agreement of the NA50 Pb+Pb data with naive comover models is reassessed. Previous work is reanalyzed and expanded to include feeding of the ψ' and χ c states to the ψ. The effect of color screening is also investigated. Only the ψ/Drell-Yan (DY) ratios are discussed here

  1. Studies of 212Pb storm

    International Nuclear Information System (INIS)

    Yunoki, E.; Kataoka, T.; Michihiro, K.; Sugiyama, H.; Shimizu, M.; Mori, T.

    1996-01-01

    212 Pb which reached its equilibrium state with its daughters in the air was measured around small uranium mines in Japan. Environmental. 212 Pb concentrations rose suddenly and reached a value ten times as high as usual values. These Phenomena were observed many times during the past six Years. We called these Phenomena 212 Pb storms. Meteorological conditions lead to the variations of 220 Rn progeny concentrations. These phenomena have been studied in the point of meteorology. (author)

  2. Correlations and fluctuations in Pb+Pb collisions

    International Nuclear Information System (INIS)

    Seyboth, Peter; Baechler, J.; Barna, D.; Barnby, L.S.; Bartke, J.; Barton, R.A.; Betev, L.; Bialkowska, H.; Billmeier, A.; Blume, C.; Blyth, C.O.; Boimska, B.; Bracinik, J.; Brady, F.P.; Brun, R.; Buncic, P.; Carr, L.; Cebra, D.; Cooper, G.E.; Cramer, J.G.; Csato, P.; Eckardt, V.; Eckhardt, F.; Ferenc, D.; Fischer, H.G.; Fodor, Z.; Foka, P.; Freund, P.; Friese, V.; Ftacnik, J.; Gal, J.; Ganz, R.; Gazdzicki, M.; Gladysz, E.; Grebieszkow, J.; Harris, J.W.; Hegyi, S.; Hlinka, V.; Hoehne, C.; Igo, G.; Ivanov, M.; Jacobs, P.; Janik, R.; Jones, P.G.; Kadija, K.; Kolesnikov, V.I.; Kowalski, M.; Lasiuk, B.; Lednicky, R.; Levai, P.; Malakhov, A.I.; Margetis, S.; Markert, C.; Mayes, B.W.; Melkumov, G.L.; Molnar, J.; Nelson, J.M.; Odyniec, G.; Oldenburg, M.D.; Palla, G.; Panagiotou, A.D.; Petridis, A.; Pikna, M.; Pinsky, L.; Poskanzer, A.M.; Prindle, D.J.; Puehlhofer, F.; Reid, J.G.; Renfordt, R.; Retyk, W.; Ritter, H.G.; Roehrich, D.; Roland, C.; Roland, G.; Rybicki, A.; Sammer, T.; Sandoval, A.; Sann, H.; Semenov, A. Yu.; Schaefer, E.; Schmitz, N.; Seyboth, P.; Sikler, F.; Sitar, B.; Skrzypczak, E.; Snellings, R.; Squier, G.T.A.; Stock, R.; Strmen, P.; Stroebele, H.; Susa, T.; Szarka, I.; Szentpetery, I.; Sziklai, J.; Toy, M.; Trainor, T.A.; Trentalange, S.; Ullrich, T.; Varga, D.; Vassiliou, M.; Veres, G.I.; Vesztergombi, G.; Voloshin, S.; Vranic, D.; Wang, F.; Weerasundara, D.D.; Wenig, S.; Whitten, C.; Xu, N.; Yates, T.A.; Yoo, I.K.; Zimanyi, J.

    2001-01-01

    Results on two-particle correlations, deuteron production, event anisotropy and event-by-event fluctuations of T > and K/π were obtained by the NA49 experiment in Pb+Pb collisions at 158 A·GeV beam energy. The interpretation of the measurements is discussed in light of the search for deconfinement

  3. Structural and electrochemical analysis of chemically synthesized microcubic architectured lead selenide thin films

    Science.gov (United States)

    Bhat, T. S.; Shinde, A. V.; Devan, R. S.; Teli, A. M.; Ma, Y. R.; Kim, J. H.; Patil, P. S.

    2018-01-01

    The present work deals with the synthesis of lead selenide (PbSe) thin films by simple and cost-effective chemical bath deposition method with variation in deposition time. The structural, morphological, and electrochemical properties of as-deposited thin films were examined using characterization techniques such as X-ray diffraction spectroscopy (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy. XRD reveals formation of rock salt phase cubic structured PbSe. FE-SEM images show the formation of microcubic structured morphology. The existence of the PbSe is confirmed from the XPS analysis. On the other hand, CV curves show four reaction peaks corresponding to oxidation [PbSe and Pb(OH)2] and reduction (PbO2 and Pb(OH)2) at the surface of PbSe thin films. The PbSe:2 sample deposited for 80 min. shows maximum specific capacitance of 454 ± 5 F g- 1 obtained at 0.25 mA cm- 2 current density. The maximum energy density of 69 Wh kg- 1 was showed by PbSe:2 electrode with a power density of 1077 W kg- 1. Furthermore, electrochemical impedance studies of PbSe:2 thin film show 80 ± 3% cycling stability even after 500 CV cycles. Such results show the importance of microcubic structured PbSe thin film as an anode in supercapacitor devices.

  4. PbTe mechanosynthesis from PbO and Te

    International Nuclear Information System (INIS)

    Rojas-Chavez, Hugo; Diaz-de la Torre, Sebastian; Jaramillo-Vigueras, David; Plascencia, Gabriel

    2009-01-01

    Experimental results concerning the mechanosynthesis (MSY), of PbTe from the PbO-Te powder system, at room temperature an atmospheric conditions are reported. XRD results for samples milled for and after 5.4 ks only show PbTe diffraction peaks; neither Te nor PbO or any other solid phase were detected. Particle size and morphology, was followed by SEM observations. Phase evolution and quantification was monitored by Rietveld refinements of the X-ray diffraction data. It was found that the use of lead oxide as a component of the mechanosynthesis system reduces milling time with respect to the Pb-Te metallic system with mechanical alloying.

  5. Optical diagnostics of lead and PbGa2S4 layered crystal laser plasmas

    International Nuclear Information System (INIS)

    Shuaibov, A.K.; Dashchenko, A.I.; Shevera, I.V.

    2001-01-01

    Laser plasmas produced at the surfaces of lead and a PbGa 2 S 4 layered crystal irradiated by a neodymium laser with λ = 1.06 μm, pulse duration τ = 20 ns, and intensity W = (1-2) x 10 9 W/cm 2 are studied using optical diagnostics. It is shown that, in a lead plasma, the most intense (characteristic) lines are the PbI 405.7-nm, PbI 368.3-nm, PbI 364-nm, and PbII 220.4-nm lines. In a layered crystal plasma, the emission spectrum is an aggregation of the most intense PbI and GaI lines, whereas sulfur lines are absent. The bottlenecks of the recombination of the ionic and atomic components of the lead and PbGa 2 S 4 crystal plasmas are determined. The average propagation velocity of the lead laser plume is 18-20 km/s. A comparative analysis of the emission dynamics of PbI and GaI lines in the laser plasmas of these metals and in the plasma of a PbGa 2 S 4 crystal is carried out. The results obtained are important for the optical diagnostics of the plasmas of lead- and gallium-containing crystals and for the optimization of laser deposition of the thin films of these substances

  6. Biogeochemistry of (210)Pb and (210)Po in fresh waters and sediments. Doctoral thesis

    International Nuclear Information System (INIS)

    Benoit, G.

    1988-06-01

    The geochemical cycling of (210)Pb in a Massachusetts lake was studied. A mass balance for the epilimnion showed that (210)Pb inputs by precipitation were matched by outputs on settling particles, so direct uptake by bottom sediments was inconsequential. Below the epilimnion, vertical mixing was very low because of a steep temperature/density gradient, and this limited vertical transport. Anoxic conditions caused remobilization of iron and (210)Pb, which reprecipitated at the oxycline and returned to the bottom via settling. Below the zone of precipitation, (210)Pb and iron distributions resulted from constant release from anoxic sediments and dilution in the water column. Sediment (210)Pb distributions were caused by sedimentation and Fickian transport. The Fickian component was equal to the pore water diffusive flux. In pore waters, (210)Pb and (210)Po were 100 times greater that in overlying water and had steep concentration gradients, unlike Fe, Mn, S(-II), and alkalinity. (210)Pb partition coefficients decreased from 15000 to 1500 with depth controlled by sorption on iron oxides. Remobilization to the water column comes from a thin layer of iron-rich floc near the sediment/water interface. Deeper in the cores, diffusive transport can cause redistribution of (210)Pb to an extent that can affect (210)Pb dating

  7. CH3NH3PbI3 based solar cell: Modified by antisolvent treatment

    Science.gov (United States)

    Nandi, Pronoy; Giri, Chandan; Bansode, Umesh; Topwal, D.

    2017-05-01

    Solar cells based on new class of organic inorganic hybrid perovskite CH3NH3PbI3 were prepared by Ethyl acetate (EA); antisolvent treatment for the first time. This treatment results in new morphology for CH3NH3PbI3 thin film. FESEM image shows microrod type structures of CH3NH3PbI3 after EA antisolvent treatment. Energy band diagram was constructed using photoluminescence and photoemission studies. A better power conversion efficiency was achieved in EA treated film compare to without EA treated film.

  8. A Strangelet and Particle Search in Pb-Pb Collisions

    CERN Multimedia

    Lohmann, K-D; Linden, T

    2002-01-01

    %NA52 %title\\\\ \\\\The NA52 experiment aims to detect strangelets, \\textit{i.e.} small drops of strange quark matter, which might result from the extreme energy and baryon densities attained in Pb+Pb collisions at a beam momentum of 158~A GeV/c. The experiment uses the H6 beam line as a spectrometer equipped with wire chambers, time of flight measurements over a path of 524~m and a hadronic calorimeter which is placed at the end of the setup.\\\\ \\\\During the 17 day run in fall of 1994 we accumulated data of 1.8~\\cdot~10$^{12}$~Pb ions on our Pb targets. The average beam intensity was 2~\\cdot~10$^{7}$~ions per spill for the NA52 experiment. We were running mainly with a 40~mm target at spectrometer rigidities of $\\pm$100 and $-$200~GeV/c and with a 16~mm target at $+$200~GeV/c. Per setting 10$^{11}$ Pb+Pb collisions were recorded. During the Pb-ion run in 1995 the statistics for the strangelet search at a rigidity of $-$200~GeV/c has been improved by about one order of magnitude. This was mainly due to a factor o...

  9. Reliability of stable Pb isotopes to identify Pb sources and verifying biological fractionation of Pb isotopes in goats and chickens

    International Nuclear Information System (INIS)

    Nakata, Hokuto; Nakayama, Shouta M.M.; Yabe, John; Liazambi, Allan; Mizukawa, Hazuki; Darwish, Wageh Sobhy; Ikenaka, Yoshinori; Ishizuka, Mayumi

    2016-01-01

    Stable Pb isotope ratios (Pb-IRs) have been recognized as an efficient tool for identifying sources. This study carried out at Kabwe mining area, Zambia, to elucidate the presence or absence of Pb isotope fractionation in goat and chicken, to evaluate the reliability of identifying Pb pollution sources via analysis of Pb-IRs, and to assess whether a threshold for blood Pb levels (Pb-B) for biological fractionation was present. The variation of Pb-IRs in goat decreased with an increase in Pb-B and were fixed at certain values close to those of the dominant source of Pb exposure at Pb-B > 5 μg/dL. However, chickens did not show a clear relationship for Pb-IRs against Pb-B, or a fractionation threshold. Given these, the biological fractionation of Pb isotopes should not occur in chickens but in goats, and the threshold for triggering biological fractionation is at around 5 μg/dL of Pb-B in goats. - Highlights: • Presence of Pb isotope fractionation in goat and chicken was studied. • The variation of Pb-IRs in goat decreased with an increase in Pb-B. • Chickens did not show a clear relationship for Pb-IRs against Pb-B. • The biological fractionation of Pb isotopes should not occur in chickens but in goats. • Threshold for triggering biological fractionation is at 5 μg/dL of Pb-B in goats. - Biological fractionation and its threshold for stable Pb isotope ratio in goats and chickens were examined.

  10. Electroweak bosons in Pb+Pb and $p$+Pb collisions

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00356981; The ATLAS collaboration

    2016-01-01

    Electroweak boson ( W , Z , γ ) measurements in Pb+Pb collisions at sNN=2.76 TeV and in p +Pb collisions at sNN=5.02 TeV are presented with the ATLAS detector at the LHC. In Pb+Pb, electroweak boson yields are shown to be independent of centrality. Differential measurements in absolute pseudorapidity are used to investigate nuclear effects to the free-proton parton distribution function (PDF). The distributions lack the experimental precision to unambiguously identify the presence of nuclear modifications. In p +Pb, the Z boson cross section is measured as a function of center-of-mass rapidity yZ⁎ and the momentum fraction of the lead-going parton (Bjorken xPb ). The distributions are asymmetric and model predictions underestimate the data at large xPb . The overall shape is best described by including nuclear effects. The differential cross section is also measured in different centrality classes and shows evidence of spatially-dependent nuclear PDFs. The Z boson production yields are measured as a functi...

  11. Electroweak bosons in Pb+Pb and p+Pb collisions from ATLAS

    CERN Document Server

    INSPIRE-00356981

    2015-01-01

    Electroweak boson ($W$, $Z$, $\\gamma$) measurements in Pb+Pb collisions at $\\sqrt{s_{NN}}=2.76$ TeV and in $p$+Pb collisions at $\\sqrt{s_{NN}}=5.02$ TeV are presented with the ATLAS detector at the LHC. In Pb+Pb, electroweak boson yields are shown to be independent of centrality. Differential measurements in absolute pseudorapidity are used to investigate nuclear effects to the free-proton parton distribution function (PDF). The distributions lack the experimental precision to unambiguously identify the presence of nuclear modifications. In $p$+Pb, the $Z$ boson cross section is measured as a function of center-of-mass rapidity $y_{Z}^{*}$ and the momentum fraction of the lead-going parton (Bjorken $x_{Pb}$). The distributions are asymmetric and model predictions underestimate the data at large $x_{Pb}$. The overall shape is best described by including nuclear effects. The differential cross section is also measured in different centrality classes and shows evidence of spatially-dependent nuclear PDFs. The $Z...

  12. Thin Places

    OpenAIRE

    Lockwood, Sandra Elizabeth

    2013-01-01

    This inquiry into the three great quests of the twentieth century–the South Pole, Mount Everest, and the Moon–examines our motivations to venture into these sublime, yet life-taking places. The Thin Place was once the destination of the religious pilgrim seeking transcendence in an extreme environment. In our age, the Thin Place quest has morphed into a challenge to evolve beyond the confines of our own physiology; through human ingenuity and invention, we reach places not meant to accommod...

  13. Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

    KAUST Repository

    Baumgardner, William J.; Choi, Joshua J.; Bian, Kaifu; Fitting Kourkoutis, Lena; Smilgies, Detlef-M.; Thompson, Michael O.; Hanrath, Tobias

    2011-01-01

    We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC

  14. NMR study of LaPb2

    International Nuclear Information System (INIS)

    Ueda, K.; Kohara, T.; Yamada, Y.

    1995-01-01

    La and Pb NMR signals were observed in LaPb 2 with a superconducting transition temperature of about 7 K. The width of the Pb NMR spectrum with an asymmetric line shape was rather narrower than those of Er-, Gd- and Ho-Pb 2 . The spin-lattice relaxation time of Pb nuclei was twice longer than that of Pb metal. La NMR spectrum had satellites due to the electric quadrupole interaction. These results show that each local environment at La or Pb site in LaPb 2 compound is uniquely determined, compared with those in randomly substituted alloys. ((orig.))

  15. Ab initio calculations of PbTiO{sub 3}/SrTiO{sub 3} (001) heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Eglitis, R.I.; Piskunov, S.; Zhukovskii, Yu.F. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., 1063 Riga (Latvia)

    2016-12-15

    We performed ab initio calculations for the PbTiO{sub 3}/SrTiO{sub 3} (001) heterostructures. For both PbO and TiO{sub 2}-terminations of the PbTiO{sub 3} (001) thin film, augmented on the SrTiO{sub 3} (001) substrate, the magnitudes of atomic relaxations Δz increases as a function of the number of augmented monolayers. For both terminations of the augmented PbTiO{sub 3} (001) nanothin film, all upper, third and fifth monolayers are displaced inwards (Δz is negative), whereas all second, fourth and sixth monolayers are displaced outwards (Δz is positive). The B3PW calculated PbTiO{sub 3}/SrTiO{sub 3} (001) heterostructure band gaps, independently from the number of augmented layers, are always smaller than the PbTiO{sub 3} and SrTiO{sub 3} bulk band gaps. For both PbO and TiO{sub 2}-terminated PbTiO{sub 3}/SrTiO{sub 3}(001) heterostructures, their band gaps are reduced due to the increased number of PbTiO{sub 3} (001) monolayers. The band gaps of PbO-terminated augmented PbTiO{sub 3} (001) films are always larger than those for TiO{sub 2}-terminated PbTiO{sub 3} (001) thin films. The only exception is the case of 7-layer PbO-terminated and 8-layer TiO{sub 2}-terminated augmented PbTiO{sub 3} (001) thin films, where their band gaps both are equal to 2.99 eV. For each monolayer of the SrTiO{sub 3} (001) substrate, charge magnitudes always are more than several times larger, than for each monolayer in the augmented PbTiO{sub 3} (001) thin film. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Thin book

    DEFF Research Database (Denmark)

    En lille bog om teater og organisationer, med bidrag fra 19 teoretikere og praktikere, der deltog i en "Thin Book Summit" i Danmark i 2005. Bogen bidrager med en state-of-the-art antologi om forskellige former for samarbejde imellem teater og organisationer. Bogen fokuserer både på muligheder og...

  17. Yrast excitations in 191Pb

    International Nuclear Information System (INIS)

    Fotiades, N.; Andreyev, A.

    1997-01-01

    Prompt, in-beam γ rays in coincidence with evaporation residues were measured in the 164,166 Er + 164 MeV 32 S reactions. A level scheme built on the 13/2 + isomer has been deduced from four transitions assigned to 191 Pb. The states in 191 Pb are interpreted in terms of a weak coupling of the odd i 13/2 neutron-hole to the spherical states in the even-mass 192 Pb core. (orig.). With 4 figs

  18. HBT correlation in 158 AGeV Pb + Pb collisions

    CERN Document Server

    Ganz, R.; Bachler, J.; Bailey, S.J.; Barna, D.; Barnby, L.S.; Bartke, J.; Barton, R.A.; Bialkowska, H.; Billmeier, A.; Blyth, C.O.; Bock, R.; Bormann, C.; Brady, F.P.; Brockmann, R.; Brun, R.; Buncic, P.; Caines, H.L.; Cebra, D.A.; Cooper, G.E.; Cramer, J.G.; Cristinziani, M.; Csato, P.; Dunn, J.; Eckardt, V.; Eckhardt, F.; Ferguson, M.I.; Fischer, H.G.; Flierl, D.; Fodor, Z.; Foka, P.; Freund, P.; Friese, V.; Fuchs, M.; Gabler, F.; Gal, J.; Gazdzicki, M.; Gladysz, E.; Grebieszkow, J.; Gunther, J.; Harris, J.W.; Hegyi, S.; Henkel, T.; Hill, L.A.; Huang, I.; Hummler, H.; Igo, G.; Irmscher, D.; Jacobs, P.; Jones, P.G.; Kadija, K.; Kolesnikov, V.I.; Kowalski, M.; Lasiuk, B.; Levai, P.; Malakhov, A.I.; Margetis, S.; Markert, C.; Melkumov, G.L.; Mock, A.; Molnar, J.; Nelson, John M.; Oldenburg, M.; Odyniec, G.; Palla, G.; Panagiotou, A.D.; Petridis, A.; Piper, A.; Porter, R.J.; Poskanzer, Arthur M.; Poziombka, S.; Prindle, D.J.; Puhlhofer, F.; Rauch, W.; Reid, J.G.; Renfordt, R.; Retyk, W.; Ritter, H.G.; Rohrich, D.; Roland, C.; Roland, G.; Rudolph, H.; Rybicki, A.; Sandoval, A.; Sann, H.; Semenov, A.Yu.; Schafer, E.; Schmischke, D.; Schmitz, N.; Schonfelder, S.; Seyboth, P.; Seyerlein, J.; Sikler, F.; Skrzypczak, E.; Squier, G.T.A.; Stock, R.; Strobele, H.; Szentpetery, I.; Sziklai, J.; Toy, M.; Trainor, T.A.; Trentalange, S.; Ullrich, T.; Vassiliou, M.; Veres, G.; Vesztergombi, G.; Vranic, D.; Wang, F.; Weerasundara, D.D.; Wenig, S.; Whitten, C.; Wienold, T.; Wood, L.; Yates, T.A.; Zimanyi, J.; Zhu, X.Z.; Zybert, R.

    1998-01-01

    The large acceptance TPCs of the NA49 spectrometer allow for a systematic multidimensional study of two-particle correlations in different part of phase space. Results from Bertsch-Pratt and Yano-Koonin-Podgoretskii parametrizations are presented differentially in transverse pair momentum and pair rapidity. These studies give an insight into the dynamical space-time evolution of relativistic Pb+Pb collisions, which is dominated by longitudinal expansion.

  19. Observation of atmospheric 210Pb and 212Pb originating from the 2004 eruptive activity of Asama volcano, Japan, and relevant 222Rn releasing from the erupting magma

    International Nuclear Information System (INIS)

    Kukita, Kazuhiko; Koike, Yuya; Nakamura, Toshihiro; Sato, Jun; Saito, Takashi

    2005-01-01

    This paper describes a study of observation of atmospheric 210Pb and 212Pb possibly from the volcano (36 deg N, 138 deg E) activity in the title and of measurement of 222Rn releasing efficiency with the ash-fall deposit collected around the period. The aerosol sample was collected from Sep. 1, an eruption day, on a building terrace (10 m high) of Meiji University at Kawasaki, located at 140 km SE of the volcano, every 24 hr on the glass fiber filter using a high volume air sampler. The filter was cut out to 4 disks, which were packed into acrylic canisters with a window of a thin Mylar film for non-destructive γ-ray measurement. 210Pb and 212Pb radioactivities were determined by the 46.5- and 238.6-keV γ-rays with an LEPS (low energy photon spectrometer) and an HPGe spectrometer, respectively. The ash-fall sample from the eruption Sep. 14, was collected at Kanrakumachi, Gunma Pref., 40 km SE of the volcano, and measurement for the growth curve of 222Rn from the fall started 1 week after the eruption. A well-type HPGe spectrometer was used for determination of the 351.9-keV γ-ray of 222Rn from 214Pb in equilibrium, which was normalized by the 911.1-keV 228Ac γ-ray. 210Pb and 212Pb emitted into the atmosphere were suggested to have been transported 140 km within the time of a few times of the 212Pb half life (10.6 hr) on the northerly wind. 210Pb and 212Pb, and 222Rn were suggested to be a possibly useful tool of monitoring magmatic activities. (S.I.)

  20. Multiparticle azimuthal correlations in p -Pb and Pb-Pb collisions at the CERN Large Hadron Collider

    NARCIS (Netherlands)

    Abelev, B.; Adam, J.; Adamová, D.; Aggarwal, M. M.; Aglieri Rinella, G.; Agnello, M.; Agostinelli, A.; Agrawal, N.; Ahammed, Z.; Ahmad, N.; Ahmed, I.; Ahn, S. U.; Ahn, S. A.; Aimo, I.; Aiola, S.; Ajaz, M.; Akindinov, A.; Alam, S. N.; Aleksandrov, D.; Alessandro, B.; Alexandre, D.; Alici, A.; Alkin, A.; Alme, J.; Alt, T.; Altinpinar, S.; Altsybeev, I.; Alves Garcia Prado, C.; Andrei, C.; Andronic, A.; Anguelov, V.; Anielski, J.; Antičić, T.; Antinori, F.; Antonioli, P.; Aphecetche, L.; Appelshäuser, H.; Arcelli, S.; Armesto, N.; Arnaldi, R.; Aronsson, T.; Arsene, I. C.; Arslandok, M.; Augustinus, A.; Averbeck, R.; Awes, T. C.; Azmi, M. D.; Bach, M.; Badalà, A.; Baek, Y. W.; Bagnasco, S.; Bailhache, R.; Bala, R.; Baldisseri, A.; Baltasar Dos Santos Pedrosa, F.; Baral, R. C.; Barbera, R.; Barile, F.; Barnaföldi, G. G.; Barnby, L. S.; Barret, V.; Bartke, J.; Basile, M.; Bastid, N.; Basu, S.; Bathen, B.; Batigne, G.; Batista Camejo, A.; Batyunya, B.; Batzing, P. C.; Baumann, C.; Bearden, I. G.; Beck, H.; Bedda, C.; Behera, N. K.; Belikov, I.; Bellini, F.; Bellwied, R.; Belmont-Moreno, E.; Belmont, R.; Belyaev, V.; Bencedi, G.; Beole, S.; Berceanu, I.; Bercuci, A.; Berdnikov, Y.; Berenyi, D.; Berger, M. E.; Bertens, R. A.; Berzano, D.; Betev, L.; Bhasin, A.; Bhat, I. R.; Bhati, A. K.; Bhattacharjee, B.; Bhom, J.; Bianchi, L.; Bianchi, N.; Bianchin, C.; Bielčík, J.; Bielčíková, J.; Bilandzic, A.; Bjelogrlic, S.; Blanco, F.; Blau, D.; Blume, C.; Bock, F.; Bogdanov, A.; Bøggild, H.; Bogolyubsky, M.; Böhmer, F. V.; Boldizsár, L.; Bombara, M.; Book, J.; Borel, H.; Borissov, A.; Bossú, F.; Botje, M.; Botta, E.; Böttger, S.; Braun-Munzinger, P.; Bregant, M.; Breitner, T.; Broker, T. A.; Browning, T. A.; Broz, M.; Bruna, E.; Bruno, G. E.; Budnikov, D.; Buesching, H.; Bufalino, S.; Buncic, P.; Busch, O.; Buthelezi, Z.; Caffarri, D.; Cai, X.; Caines, H.; Calero Diaz, L.; Caliva, A.; Calvo Villar, E.; Camerini, P.; Carena, F.; Carena, W.; Castillo Castellanos, J.; Casula, E. A R; Catanescu, V.; Cavicchioli, C.; Ceballos Sanchez, C.; Cepila, J.; Cerello, P.; Chang, B.; Chapeland, S.; Charvet, J. L.; Chattopadhyay, S.; Chattopadhyay, S.; Chelnokov, V.; Cherney, M.; Cheshkov, C.; Cheynis, B.; Chibante Barroso, V.; Chinellato, D. D.; Chochula, P.; Chojnacki, M.; Choudhury, S.; Christakoglou, P.; Christensen, C. H.; Christiansen, P.; Chujo, T.; Chung, S. U.; Cicalo, C.; Cifarelli, L.; Cindolo, F.; Cleymans, J.; Colamaria, F.; Colella, D.; Collu, A.; Colocci, M.; Conesa Balbastre, G.; Conesa Del Valle, Z.; Connors, M. E.; Contreras, J. G.; Cormier, T. M.; Corrales Morales, Y.; Cortese, P.; Cortés Maldonado, I.; Cosentino, M. R.; Costa, F.; Crochet, P.; Cruz Albino, R.; Cuautle, E.; Cunqueiro, L.; Dainese, A.; Dang, R.; Danu, A.; Das, D.; Das, I.; Das, K.; Das, S.; Dash, A.; Dash, S.; De, S.; Delagrange, H.; Deloff, A.; Dénes, E.; D'Erasmo, G.; De Caro, A.; De Cataldo, G.; De Cuveland, J.; De Falco, A.; De Gruttola, D.; De Marco, N.; De Pasquale, S.; De Rooij, R.; Diaz Corchero, M. A.; Dietel, T.; Dillenseger, P.; Divià, R.; Di Bari, D.; Di Liberto, S.; Di Mauro, A.; Di Nezza, P.; Djuvsland, O.; Dobrin, A.; Dobrowolski, T.; Domenicis Gimenez, D.; Dönigus, B.; Dordic, O.; Dørheim, S.; Dubey, A. K.; Dubla, A.; Ducroux, L.; Dupieux, P.; Dutta Majumdar, A. K.; Hilden, T. E.; Ehlers, R. J.; Elia, D.; Engel, H.; Erazmus, B.; Erdal, H. A.; Eschweiler, D.; Espagnon, B.; Esposito, M.; Estienne, M.; Esumi, S.; Evans, D.; Evdokimov, S.; Fabris, D.; Faivre, J.; Falchieri, D.; Fantoni, A.; Fasel, M.; Fehlker, D.; Feldkamp, L.; Felea, D.; Feliciello, A.; Feofilov, G.; Ferencei, J.; Fernández Téllez, A.; Ferreiro, E. G.; Ferretti, A.; Festanti, A.; Figiel, J.; Figueredo, M. A S; Filchagin, S.; Finogeev, D.; Fionda, F. M.; Fiore, E. M.; Floratos, E.; Floris, M.; Foertsch, S.; Foka, P.; Fokin, S.; Fragiacomo, E.; Francescon, A.; Frankenfeld, U.; Fuchs, U.; Furget, C.; Furs, A.; Fusco Girard, M.; Gaardhøje, J. J.; Gagliardi, M.; Gago, A. M.; Gallio, M.; Gangadharan, D. R.; Ganoti, P.; Garabatos, C.; Garcia-Solis, E.; Gargiulo, C.; Garishvili, I.; Gerhard, J.; Germain, M.; Gheata, A.; Gheata, M.; Ghidini, B.; Ghosh, P.; Ghosh, S. K.; Gianotti, P.; Giubellino, P.; Gladysz-Dziadus, E.; Glässel, P.; Gomez Ramirez, A.; González-Zamora, P.; Gorbunov, S.; Görlich, L.; Gotovac, S.; Graczykowski, L. K.; Grelli, A.; Grigoras, A.; Grigoras, C.; Grigoriev, V.; Grigoryan, A.; Grigoryan, S.; Grinyov, B.; Grion, N.; Grosse-Oetringhaus, J. F.; Grossiord, J. Y.; Grosso, R.; Guber, F.; Guernane, R.; Guerzoni, B.; Guilbaud, M.; Gulbrandsen, K.; Gulkanyan, H.; Gumbo, M.; Gunji, T.; Gupta, A.; Gupta, R.; Khan, K. H.; Haake, R.; Haaland, O.; Hadjidakis, C.; Haiduc, M.; Hamagaki, H.; Hamar, G.; Hanratty, L. D.; Hansen, A.; Harris, J. W.; Hartmann, H.; Harton, A.; Hatzifotiadou, D.; Hayashi, S.; Heckel, S. T.; Heide, M.; Helstrup, H.; Herghelegiu, A.; Herrera Corral, G.; Hess, B. A.; Hetland, K. F.; Hippolyte, B.; Hladky, J.; Hristov, P.; Huang, M.; Humanic, T. J.; Hussain, N.; Hutter, D.; Hwang, D. S.; Ilkaev, R.; Ilkiv, I.; Inaba, M.; Innocenti, G. M.; Ionita, C.; Ippolitov, M.; Irfan, M.; Ivanov, M.; Ivanov, V.; Jachołkowski, A.; Jacobs, P. M.; Jahnke, C.; Jang, H. J.; Janik, M. A.; Jayarathna, P. H S Y; Jena, C.; Jena, S.; Jimenez Bustamante, R. T.; Jones, P. G.; Jung, H.; Jusko, A.; Kadyshevskiy, V.; Kalcher, S.; Kalinak, P.; Kalweit, A.; Kamin, J.; Kang, J. H.; Kaplin, V.; Kar, S.; Karasu Uysal, A.; Karavichev, O.; Karavicheva, T.; Karpechev, E.; Kebschull, U.; Keidel, R.; Keijdener, D. L D; Keil Svn, M.; Khan, M. M.; Khan, P.; Khan, S. A.; Khanzadeev, A.; Kharlov, Y.; Kileng, B.; Kim, B.; Kim, D. W.; Kim, D. J.; Kim, J. S.; Kim, M.; Kim, M.; Kim, S.; Kim, T.; Kirsch, S.; Kisel, I.; Kiselev, S.; Kisiel, A.; Kiss, G.; Klay, J. L.; Klein, J.; Klein-Bösing, C.; Kluge, A.; Knichel, M. L.; Knospe, A. G.; Kobdaj, C.; Kofarago, M.; Köhler, M. K.; Kollegger, T.; Kolojvari, A.; Kondratiev, V.; Kondratyeva, N.; Konevskikh, A.; Kovalenko, V.; Kowalski, M.; Kox, S.; Koyithatta Meethaleveedu, G.; Kral, J.; Králik, I.; Kravčáková, A.; Krelina, M.; Kretz, M.; Krivda, M.; Krizek, F.; Kryshen, E.; Krzewicki, M.; Kučera, V.; Kucheriaev, Y.; Kugathasan, T.; Kuhn, C.; Kuijer, P. G.; Kulakov, I.; Kumar, J.; Kurashvili, P.; Kurepin, A.; Kurepin, A. B.; Kuryakin, A.; Kushpil, S.; Kweon, M. J.; Kwon, Y.; Ladron De Guevara, P.; Lagana Fernandes, C.; Lakomov, I.; Langoy, R.; Lara, C.; Lardeux, A.; Lattuca, A.; La Pointe, S. L.; La Rocca, P.; Lea, R.; Leardini, L.; Lee, G. R.; Legrand, I.; Lehnert, J.; Lemmon, R. C.; Lenti, V.; Leogrande, E.; Leoncino, M.; León Monzón, I.; Lévai, P.; Li, S.; Lien, J.; Lietava, R.; Lindal, S.; Lindenstruth, V.; Lippmann, C.; Lisa, M. A.; Ljunggren, H. M.; Lodato, D. F.; Loenne, P. I.; Loggins, V. R.; Loginov, V.; Lohner, D.; Loizides, C.; Lopez, X.; López Torres, E.; Lu, X. G.; Luettig, P.; Lunardon, M.; Luparello, G.; Ma, R.; Maevskaya, A.; Mager, M.; Mahapatra, D. P.; Mahmood, S. M.; Maire, A.; Majka, R. D.; Malaev, M.; Maldonado Cervantes, I.; Malinina, L.; Mal'Kevich, D.; Malzacher, P.; Mamonov, A.; Manceau, L.; Manko, V.; Manso, F.; Manzari, V.; Marchisone, M.; Mareš, J.; Margagliotti, G. V.; Margotti, A.; Marín, A.; Markert, C.; Marquard, M.; Martashvili, I.; Martin, N. A.; Martinengo, P.; Martínez, M. I.; Martínez García, G.; Martin Blanco, J.; Martynov, Y.; Mas, A.; Masciocchi, S.; Masera, M.; Masoni, A.; Massacrier, L.; Mastroserio, A.; Matyja, A.; Mayer, C.; Mazer, J.; Mazzoni, M. A.; Meddi, F.; Menchaca-Rocha, A.; Meninno, E.; Mercado Pérez, J.; Meres, M.; Miake, Y.; Mikhaylov, K.; Milano, L.; Milosevic, J.; Mischke, A.; Mishra, A. N.; Mis̈kowiec, D.; Mitra, J.; Mitu, C. M.; Mlynarz, J.; Mohammadi, N.; Mohanty, B.; Molnar, L.; Montaño Zetina, L.; Montes, E.; Morando, M.; Moreira De Godoy, D. A.; Moretto, S.; Morreale, A.; Morsch, A.; Muccifora, V.; Mudnic, E.; Mühlheim, D.; Muhuri, S.; Mukherjee, M.; Müller, H.; Munhoz, M. G.; Murray, S.; Musa, L.; Musinsky, J.; Nandi, B. K.; Nania, R.; Nappi, E.; Nattrass, C.; Nayak, K.; Nayak, T. K.; Nazarenko, S.; Nedosekin, A.; Nicassio, M.; Niculescu, M.; Nielsen, B. S.; Nikolaev, S.; Nikulin, S.; Nikulin, V.; Nilsen, B. S.; Noferini, F.; Nomokonov, P.; Nooren, G.; Norman, J.; Nyanin, A.; Nystrand, J.; Oeschler, H.; Oh, S.; Oh, S. K.; Okatan, A.; Olah, L.; Oleniacz, J.; Oliveira Da Silva, A. C.; Onderwaater, J.; Oppedisano, C.; Ortiz Velasquez, A.; Oskarsson, A.; Otwinowski, J.; Oyama, K.; Ozdemir, M.; Sahoo, P.; Pachmayer, Y.; Pachr, M.; Pagano, P.; Paić, G.; Painke, F.; Pajares, C.; Pal, S. K.; Palmeri, A.; Pant, D.; Papikyan, V.; Pappalardo, G. S.; Pareek, P.; Park, W. J.; Parmar, S.; Passfeld, A.; Patalakha, D. I.; Paticchio, V.; Paul, B.; Pawlak, T.; Peitzmann, T.; Pereira Da Costa, H.; Pereira De Oliveira Filho, E.; Peresunko, D.; Pérez Lara, C. E.; Pesci, A.; Peskov, V.; Pestov, Y.; Petráček, V.; Petran, M.; Petris, M.; Petrovici, M.; Petta, C.; Piano, S.; Pikna, M.; Pillot, P.; Pinazza, O.; Pinsky, L.; Piyarathna, D. B.; Płoskoń, M.; Planinic, M.; Pluta, J.; Pochybova, S.; Podesta-Lerma, P. L M; Poghosyan, M. G.; Pohjoisaho, E. H O; Polichtchouk, B.; Poljak, N.; Pop, A.; Porteboeuf-Houssais, S.; Porter, J.; Potukuchi, B.; Prasad, S. K.; Preghenella, R.; Prino, F.; Pruneau, C. A.; Pshenichnov, I.; Puddu, G.; Pujahari, P.; Punin, V.; Putschke, J.; Qvigstad, H.; Rachevski, A.; Raha, S.; Rak, J.; Rakotozafindrabe, A.; Ramello, L.; Raniwala, R.; Raniwala, S.; Räsänen, S. S.; Rascanu, B. T.; Rathee, D.; Rauf, A. W.; Razazi, V.; Read, K. F.; Real, J. S.; Redlich, K.; Reed, R. J.; Rehman, A.; Reichelt, P.; Reicher, M.; Reidt, F.; Renfordt, R.; Reolon, A. R.; Reshetin, A.; Rettig, F.; Revol, J. P.; Reygers, K.; Riabov, V.; Ricci, R. A.; Richert, T.; Richter, M.; Riedler, P.; Riegler, W.; Riggi, F.; Rivetti, A.; Rocco, E.; Rodríguez Cahuantzi, M.; Rodriguez Manso, A.; Røed, K.; Rogochaya, E.; Rohni, S.; Rohr, D.; Röhrich, D.; Romita, R.; Ronchetti, F.; Ronflette, L.; Rosnet, P.; Rossi, A.; Roukoutakis, F.; Roy, A.; Roy, C.; Roy, P.; Rubio Montero, A. J.; Rui, R.; Russo, R.; Ryabinkin, E.; Ryabov, Y.; Rybicki, A.; Sadovsky, S.; Šafařík, K.; Sahlmuller, B.; Sahoo, R.; Sahu, P. K.; Saini, J.; Sakai, S.; Salgado, C. A.; Salzwedel, J.; Sambyal, S.; Samsonov, V.; Sanchez Castro, X.; Sánchez Rodríguez, F. J.; Šándor, L.; Sandoval, A.; Sano, M.; Santagati, G.; Sarkar, D.; Scapparone, E.; Scarlassara, F.; Scharenberg, R. P.; Schiaua, C.; Schicker, R.; Schmidt, C.; Schmidt, H. R.; Schuchmann, S.; Schukraft, J.; Schulc, M.; Schuster, T.; Schutz, Y.; Schwarz, K.; Schweda, K.; Scioli, G.; Scomparin, E.; Scott, R.; Segato, G.; Seger, J. E.; Sekiguchi, Y.; Selyuzhenkov, I.; Seo, J.; Serradilla, E.; Sevcenco, A.; Shabetai, A.; Shabratova, G.; Shahoyan, R.; Shangaraev, A.; Sharma, N.; Sharma, S.; Shigaki, K.; Shtejer, K.; Sibiriak, Y.; Siddhanta, S.; Siemiarczuk, T.; Silvermyr, D.; Silvestre, C.; Simatovic, G.; Singaraju, R.; Singh, R.; Singha, S.; Singhal, V.; Sinha, B. C.; Sinha, T.; Sitar, B.; Sitta, M.; Skaali, T. B.; Skjerdal, K.; Slupecki, M.; Smirnov, N.; Snellings, R. J M; Søgaard, C.; Soltz, R.; Song, J.; Song, M.; Soramel, F.; Sorensen, S.; Spacek, M.; Spiriti, E.; Sputowska, I.; Spyropoulou-Stassinaki, M.; Srivastava, B. K.; Stachel, J.; Stan, I.; Stefanek, G.; Steinpreis, M.; Stenlund, E.; Steyn, G.; Stiller, J. H.; Stocco, D.; Stolpovskiy, M.; Strmen, P.; Suaide, A. A P; Sugitate, T.; Suire, C.; Suleymanov, M.; Sultanov, R.; Šumbera, M.; Susa, T.; Symons, T. J M; Szabo, A.; Szanto De Toledo, A.; Szarka, I.; Szczepankiewicz, A.; Szymanski, M.; Takahashi, J.; Tangaro, M. A.; Tapia Takaki, J. D.; Tarantola Peloni, A.; Tarazona Martinez, A.; Tarzila, M. G.; Tauro, A.; Tejeda Muñoz, G.; Telesca, A.; Terrevoli, C.; Thäder, J.; Thomas, D.; Tieulent, R.; Timmins, A. R.; Toia, A.; Trubnikov, V.; Trzaska, W. H.; Tsuji, T.; Tumkin, A.; Turrisi, R.; Tveter, T. S.; Ullaland, K.; Uras, A.; Usai, G. L.; Vajzer, M.; Vala, M.; Valencia Palomo, L.; Vallero, S.; Vande Vyvre, P.; Van Der Maarel, J.; Van Hoorne, J. W.; Van Leeuwen, M.; Vargas, A.; Vargyas, M.; Varma, R.; Vasileiou, M.; Vasiliev, A.; Vechernin, V.; Veldhoen, M.; Velure, A.; Venaruzzo, M.; Vercellin, E.; Vergara Limón, S.; Vernet, R.; Verweij, M.; Vickovic, L.; Viesti, G.; Viinikainen, J.; Vilakazi, Z.; Villalobos Baillie, O.; Vinogradov, A.; Vinogradov, L.; Vinogradov, Y.; Virgili, T.; Viyogi, Y. P.; Vodopyanov, A.; Völkl, M. A.; Voloshin, K.; Voloshin, S. A.; Volpe, G.; Von Haller, B.; Vorobyev, I.; Vranic, D.; Vrláková, J.; Vulpescu, B.; Vyushin, A.; Wagner, B.; Wagner, J.; Wagner, V.; Wang, M.; Wang, Y.; Watanabe, D.; Weber, M.; Wessels, J. P.; Westerhoff, U.; Wiechula, J.; Wikne, J.; Wilde, M.; Wilk, G.; Wilkinson, J.; Williams, M. C S; Windelband, B.; Winn, M.; Yaldo, C. G.; Yamaguchi, Y.; Yang, H.; Yang, P.; Yang, S.; Yano, S.; Yasnopolskiy, S.; Yi, J.; Yin, Z.; Yoo, I. K.; Yushmanov, I.; Zaccolo, V.; Zach, C.; Zaman, A.; Zampolli, C.; Zaporozhets, S.; Zarochentsev, A.; Závada, P.; Zaviyalov, N.; Zbroszczyk, H.; Zgura, I. S.; Zhalov, M.; Zhang, H.; Zhang, X.; Zhang, Y.; Zhao, C.; Zhigareva, N.; Zhou, D.; Zhou, F.; Zhou, Y.; Zhou, Zhuo; Zhu, H.; Zhu, J.; Zhu, X.; Zichichi, A.; Zimmermann, A.; Zimmermann, M. B.; Zinovjev, G.; Zoccarato, Y.; Zyzak, M.

    2014-01-01

    Measurements of multiparticle azimuthal correlations (cumulants) for charged particles in p-Pb at sNN=5.02 TeV and Pb-Pb at sNN=2.76 TeV collisions are presented. They help address the question of whether there is evidence for global, flowlike, azimuthal correlations in the p-Pb system. Comparisons

  1. Integrated elemental and Sr-Nd-Pb-Hf isotopic studies of Mesozoic mafic dykes from the eastern North China Craton: implications for the dramatic transformation of lithospheric mantle

    Science.gov (United States)

    Liu, Shen; Feng, Caixia; Santosh, M.; Feng, Guangying; Coulson, Ian M.; Xu, Mengjing; Guo, Zhuang; Guo, Xiaolei; Peng, Hao; Feng, Qiang

    2018-02-01

    Evolution of the lithospheric mantle beneath the North China Craton (NCC) from its Precambrian cratonic architecture until Paleozoic, and the transformation to an oceanic realm during Mesozoic, with implications on the destruction of cratonic root have attracted global attention. Here we present geochemical and isotopic data on a suite of newly identified Mesozoic mafic dyke swarms from the Longwangmiao, Weijiazhuang, Mengjiazhuang, Jiayou, Huangmi, and Xiahonghe areas (Qianhuai Block) along the eastern NCC with an attempt to gain further insights on the lithospheric evolution of the region. The Longwangmiao dykes are alkaline with LILE (Ba and K)- and LREE-enrichment ((La/Yb) N > 4.3) and EM1-like Sr-Nd-Pb-Hf isotopic signature ((87Sr/86Sr) i > 0.706; ε Nd (t) 16.6, (207Pb/204Pb) i > 15.4, (208Pb/204Pb) i > 36.8, ε Hf (t) 3.7), and display similar EM1-like isotopic features ((87Sr/86Sr) i > 0.706; ε Nd (t) 16.7, (207Pb/204Pb) i > 15.4, (208Pb/204Pb) i > 36.9, ε Hf (t) 2.4) and EM1-like isotopic features((87Sr/86Sr) i > 0.706; ε Nd (t) 16.7, (207Pb/204Pb) i > 15.4, (208Pb/204Pb) i > 36.9, ε Hf (t) 3.7) and EM1-like Sr-Nd-Pb-Hf isotopic features ((87Sr/86Sr) i > 0.706; ε Nd(t) 16.7, (207Pb/204Pb) i > 15.4, (208Pb/204Pb) i > 36.9, ε Hf (t) 9.3) and EM1-like isotopic composition ((87Sr/86Sr) i > 0.705; ε Nd (t) 16.9, (207Pb/204Pb) i > 15.5, (208Pb/204Pb) i > 36.9, ε Hf (t) 0.705; ε Nd (t) 16.9, (207Pb/204Pb) i > 15.5, (208Pb/204Pb) i > 36.9, ε Hf (t) < -8.6). Our data from the various mafic dyke suites suggest that the magmas were derived from EM1-like lithospheric mantle, corresponding to lithospheric mantle modified by the previously foundered lower crust beneath the eastern NCC. Our results suggest contrasting lithospheric evolution from Triassic (212 Ma) to Cretaceous (123 Ma) beneath the NCC. These mafic dykes mark an important phase of lithospheric thinning in the eastern North China Craton.

  2. Pb detoxification in Equisetum diffusum

    Directory of Open Access Journals (Sweden)

    Deepak Pant

    2015-01-01

    Full Text Available Current research highlights the use of aquatic macrophyte Equisetum diffusum (Himalayan horsetail for lead detoxification. This plant species can grow in waste cathode ray tube (CRT powder and absorbs its Pb. X-ray fluorescence spectroscopy (XRF analysis of plant ash shows that 68 mg/kg lead concentration in the untreated plant was improved to 7600 mg/kg in CRT powder after 90 days. The role of monosilicic and/or monoplumbic acid as reaction intermediates for Pb detoxification and associated bioaccumulation is proposed. Pb detoxification in E. diffusum is mainly rendering around the iso-electronic nature of Pb and Si and forms similar phytochelatin (PC complexes with available family of peptide ligands. The study focuses on the underlying functions of silicon containing plants in metal detoxification.

  3. Solvent Engineering for High-Performance PbS Quantum Dots Solar Cells

    Directory of Open Access Journals (Sweden)

    Rongfang Wu

    2017-07-01

    Full Text Available PbS colloidal quantum dots (CQDs solar cells have already demonstrated very impressive advances in recent years due to the development of many different techniques to tailor the interface morphology and compactness in PbS CQDs thin film. Here, n-hexane, n-octane, n-heptane, isooctane and toluene or their hybrids are for the first time introduced as solvent for comparison of the dispersion of PbS CQDs. PbS CQDs solar cells with the configuration of PbS/TiO2 heterojunction are then fabricated by using different CQDs solution under ambient conditions. The performances of the PbS CQDs solar cells are found to be tuned by changing solvent and its content in the PbS CQDs solution. The best device could show a power conversion efficiency (PCE of 7.64% under AM 1.5 G illumination at 100 mW cm−2 in a n-octane/isooctane (95%/5% v/v hybrid solvent scheme, which shows a ~15% improvement compared to the control devices. These results offer important insight into the solvent engineering of high-performance PbS CQDs solar cells.

  4. Polarization retention loss in PbTiO3 ferroelectric films due to leakage currents

    NARCIS (Netherlands)

    Morelli, A.; Venkatesan, Sriram; Palasantzas, G.; Kooi, B. J.; De Hosson, J. Th. M.

    2007-01-01

    The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakage currents is demonstrated by piezoresponse and conductive atomic force microscopy measurements. It was found that the polarization reversal in the absence of an electric field followed a stretched

  5. Femtoscopy with Identified Hadrons in pp, pPb, and PbPb Collisions in CMS

    Directory of Open Access Journals (Sweden)

    Ferenc Siklér

    2017-11-01

    Full Text Available Short-range correlations of identified charged hadrons in pp ( s = 0.9, 2.76, and 7 TeV, pPb ( s NN = 5.02 TeV, and peripheral PbPb collisions ( s NN = 2.76 TeV are studied with the CMS detector at the LHC. Charged pions, kaons, and protons at low momentum and in laboratory pseudorapidity | η | < 1 are identified via their energy loss in the silicon tracker. The two-particle correlation functions show effects of quantum statistics, Coulomb interaction, and also indicate the role of multi-body resonance decays and mini-jets. The characteristics of the one-, two-, and three-dimensional correlation functions are studied as a function of transverse pair momentum, k T , and the charged-particle multiplicity of the event. The extracted radii are in the range 1–5 fm, reaching highest values for very high multiplicity pPb, also for similar multiplicity PbPb collisions, and decrease with increasing k T . The dependence of radii on multiplicity and k T largely factorizes and appears to be insensitive to the type of the colliding system and center-of-mass energy.

  6. Reducing Pb poisoning in birds and Pb exposure in game meat consumers: the dual benefit of effective Pb shot regulation.

    Science.gov (United States)

    Mateo, Rafael; Vallverdú-Coll, Núria; López-Antia, Ana; Taggart, Mark A; Martínez-Haro, Monica; Guitart, Raimon; Ortiz-Santaliestra, Manuel E

    2014-02-01

    The use of lead (Pb) ammunition in the form of shot pellets has been identified as a Pb exposure risk in wildlife and their human consumers. We explore the hypothesis that Pb shot ban enforcement reduces the risk of avian Pb poisoning as well as Pb exposure in game meat consumers. We assessed compliance with a partial ban on Pb shot commencing in 2003 by examination of 937 waterbirds harvested by hunters between 2007 and 2012 in the Ebro delta (Spain). Prevalence of Pb shot ingestion was determined, as were Pb concentrations in liver and muscle tissue to evaluate the potential for Pb exposure in game meat consumers. Hunted birds with only embedded Pb shot (no steel) declined from 26.9% in 2007-08 to meat (0.1μg/g wet weight) in the 2008-09 season, when Pb shot ingestion prevalence was also at a minimum (5.1%). Effective restrictions in Pb ammunition use have a dual benefit since this reduces Pb exposure for game meat consumers due to embedded ammunition as well as reducing Pb poisoning in waterbirds. Copyright © 2013 Elsevier Ltd. All rights reserved.

  7. Age determination of paintings by 210Pb method

    International Nuclear Information System (INIS)

    Gilot, E.; Apers, D.

    1977-01-01

    Often the 210 Pb method for age determination of paintings is inoperative because the initial 210 Pb activity of undated lead oxide cannot be determined. This difficulty could be removed if the ores could be identified from which the lead white was prepared. It would be possible to measure the initial 210 Pb activity directly in Pb ores or in identical Pb oxides from properly dated pictures. Some results show that Pb ores can be identified by the isotope ratios 206 Pb/ 204 Pb, 207 Pb/ 204 Pb, 208 Pb/ 204 Pb. A systematic study of Pb ores and pigment isotopic composition is necessary. (author)

  8. Search for critical phenomena in Pb - Pb collisions

    CERN Document Server

    Kopytine, Mikhail L.; Boggild, H.; Boissevain, J.; Conin, L.; Dodd, J.; Erazmus, B.; Esumi, S.; Fabjan, C.W.; Ferenc, D.; Fields, D.E.; Franz, A.; Gaardhoje, J.J.; Hansen, A.G.; Hansen, O.; Hardtke, D.; Van Hecke, H.; Holzer, E.B.; Humanic, T.J.; Hummel, P.; Jacak, B.V.; Jayanti, R.; Kaimi, K.; Kaneta, M.; Kohama, T.; Leltchouk, M.; Ljubicic, A., Jr.; Lorstad, B.; Maeda, N.; Martin, L.; Medvedev, A.; Murray, M.; Ohnishi, H.; Paic, G.; Pandey, S.U.; Piuz, F.; Pluta, J.; Polychronakos, V.; Potekhin, M.; Poulard, G.; Reichhold, D.; Sakaguchi, A.; Schmidt-Sorensen, J.; Simon-Gillo, J.; Sondheim, W.; Sugitate, T.; Sullivan, J.P.; Sumi, Y.; Willis, W.J.; Wolf, K.L.; Xu, N.; Zachary, D.S.; Kopytine, Mikhail

    2001-01-01

    NA44 uses a 512 channel Si pad array covering $1.5 <\\eta < 3.3$ to study charged hadron production in Pb+Pb collisions at the CERN SPS. We apply a multiresolution analysis, based on a Discrete Wavelet Transformation, to probe the texture of particle distributions event-by-event, by simultaneous localization of features in space and scale. Scanning a broad range of multiplicities, we look for a possible critical behaviour in the power spectra of local density fluctuations. The data are compared with detailed simulations of detector response, using heavy ion event generators, and with a reference sample created via event mixing.

  9. Growth and properties of lead iodide thin films by spin coating

    Indian Academy of Sciences (India)

    X-ray diffraction patterns revealed that the thin films possessed hexagonal structures. The thin films .... of inorganic PbI2 in an organic solvent depends on the co- ordination .... Figure 7b and c shows the absorption coefficient of both samples ...

  10. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jü rgen; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational

  11. Contents of /sup 210/Pb in food

    Energy Technology Data Exchange (ETDEWEB)

    Huang, X; Song, H

    1982-02-01

    The contents of /sup 210/Pb in 30 kinds of commonly used foods are given in the paper. After the radioactive equilibrium between /sup 210/Pb and /sup 210/Pb was nearly established in samples, the concentration of /sup 210/Pb was determined by the method of spontaneous deposition on silver disc. The contents of /sup 210/Pb then were calculated from that of /sup 210/Po. The average contents of /sup 210/Pb in corn, vegetable and meat were 0.14, 15.08 and 1.26 x 10/sup -14/ Ci/g respectively.

  12. Enhanced magnetoelectric coupling in a composite multiferroic system via interposing a thin film polymer

    Science.gov (United States)

    Xiao, Zhuyun; Mohanchandra, Kotekar P.; Lo Conte, Roberto; Ty Karaba, C.; Schneider, J. D.; Chavez, Andres; Tiwari, Sidhant; Sohn, Hyunmin; Nowakowski, Mark E.; Scholl, Andreas; Tolbert, Sarah H.; Bokor, Jeffrey; Carman, Gregory P.; Candler, Rob N.

    2018-05-01

    Enhancing the magnetoelectric coupling in a strain-mediated multiferroic composite structure plays a vital role in controlling magnetism by electric fields. An enhancement of magnetoelastic coupling between ferroelectric single crystal (011)-cut [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈ 0.30) and ferromagnetic polycrystalline Ni thin film through an interposed benzocyclobutene polymer thin film is reported. A nearly twofold increase in sensitivity of remanent magnetization in the Ni thin film to an applied electric field is observed. This observation suggests a viable method of improving the magnetoelectric response in these composite multiferroic systems.

  13. Fabrication of a nano-structured PbO2 electrode by using printing technology: surface characterization and application

    International Nuclear Information System (INIS)

    Kannan, K.; Muthuraman, G.; Cho, G.; Moon, I. S.

    2014-01-01

    This investigation aimed to introduce printing technology for the first time to prepare a nanostrucutured PbO 2 electrode and its application to a cerium redox transfer process. The new method of nano-size PbO 2 preparation demonstrated that nano-PbO 2 could be obtained in less time and at less cost at room temperature. The prepared nano-PbO 2 screen printed on a Ti electrode by three different compositions under similar conditions showed through surface and electrochemical analyses no adherence on Ti and no contact with other nano-PbO 2 particles. Gravure printing of nano-PbO 2 on a PET (poly ethylene thin) film at high pressure was done with two different compositions for the first time. The selective composition of 57.14 % nano-PbO 2 powder with 4.28 % carbon black and 38.58 % ECA (ethyl carbitol acetate) produced a film with a nanoporous structure with an electron transfer ability. Finally, the optimized gravure-printed nano-PbO 2 electrode was applied to the oxidation of Ce(III) to Ce(IV) by using cyclic voltammetry. The gravure-printed nano-PbO 2 should pave the way to promising applications in electrochemical and sensor fields.

  14. Fabrication of a nano-structured PbO{sub 2} electrode by using printing technology: surface characterization and application

    Energy Technology Data Exchange (ETDEWEB)

    Kannan, K.; Muthuraman, G.; Cho, G.; Moon, I. S. [Sunchon National University, Suncheon (Korea, Republic of)

    2014-08-15

    This investigation aimed to introduce printing technology for the first time to prepare a nanostrucutured PbO{sub 2} electrode and its application to a cerium redox transfer process. The new method of nano-size PbO{sub 2} preparation demonstrated that nano-PbO{sub 2} could be obtained in less time and at less cost at room temperature. The prepared nano-PbO{sub 2} screen printed on a Ti electrode by three different compositions under similar conditions showed through surface and electrochemical analyses no adherence on Ti and no contact with other nano-PbO{sub 2} particles. Gravure printing of nano-PbO{sub 2} on a PET (poly ethylene thin) film at high pressure was done with two different compositions for the first time. The selective composition of 57.14 % nano-PbO{sub 2} powder with 4.28 % carbon black and 38.58 % ECA (ethyl carbitol acetate) produced a film with a nanoporous structure with an electron transfer ability. Finally, the optimized gravure-printed nano-PbO{sub 2} electrode was applied to the oxidation of Ce(III) to Ce(IV) by using cyclic voltammetry. The gravure-printed nano-PbO{sub 2} should pave the way to promising applications in electrochemical and sensor fields.

  15. U-Pb geochronology of zircons form lunar Breccia 73217 using a sensitive high mass-resolution ion microprobe

    International Nuclear Information System (INIS)

    Compston, W.; Williams, I.S.

    1984-01-01

    U-Pb age determinations on four lunar zircons from existing thin-sections of one highland breccia, 73217, using the recently constructed ion microprobe SHRIMP, are reported. The analytical reproducibility of SHRIMP is demonstrated, and procedures for measuring Pb/U, Th/U, and corecting for initial Pb are explained. Electron microprobe analyses for the zircons are also reported. The results show that the four zircons survived the lunar cataclysm without any identifiable effects on their U-Pb systematics. All four indicate a single age of 4356 +23 or -14 m.y. The zircons have experienced small variable amounts of Pb loss since crystallization, from almost zero up to about 10 percent. If this occurred during one later event, then age of the latter is between 1100 and 2300 m.y. 18 references

  16. Using Low Temperature Photoluminescence Spectroscopy to Investigate CH3NH3PbI3 Hybrid Perovskite Degradation

    Directory of Open Access Journals (Sweden)

    Khaoula Jemli

    2016-07-01

    Full Text Available Investigating the stability and evaluating the quality of the CH3NH3PbI3 perovskite structures is quite critical both to the design and fabrication of high-performance perovskite devices and to fundamental studies of the photophysics of the excitons. In particular, it is known that, under ambient conditions, CH3NH3PbI3 degrades producing some PbI2. We show here that low temperature Photoluminescence (PL spectroscopy is a powerful tool to detect PbI2 traces in hybrid perovskite layers and single crystals. Because PL spectroscopy is a signal detection method on a black background, small PbI2 traces can be detected, when other methods currently used at room temperature fail. Our study highlights the extremely high stability of the single crystals compared to the thin layers and defects and grain boundaries are thought to play an important role in the degradation mechanism.

  17. PETROCHEMISTRY, Pb ISOTOPE SYSTEMATICS, AND ...

    African Journals Online (AJOL)

    The petrology, geochemistry, geotectonic setting and common Pb isotope model ages for the granite gneisses in Ilesha schist belt have been studied and presented in this paper. These gneisses, apart from the normal rock-forming silicates, contain apatite, monazite, ilmenite and zircon in trace amounts. The occurrence of ...

  18. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  19. Pb speciation results in amended soils

    Data.gov (United States)

    U.S. Environmental Protection Agency — The dataset shows the distribution of Pb phases resulting from various amendments to change Pb speciation. This dataset is associated with the following publication:...

  20. Investigation of Central Pb-Pb Interactions at Energies of 160 GeV/Nucleon with the Help of the Emulsion Magnetic Chamber

    CERN Multimedia

    2002-01-01

    % EMU15 \\\\ \\\\ The aim of this experiment is to investigate high energy heavy ion central collisions by the use of emulsion magnetic chamber with high spatial resolution. The emulsion chamber consists of 50~emulsion layers 50~microns thick each coated on 25~microns mylar base. A thin lead target plate 300~microns thick is installed immediately in front of the first emulsion layer. It is placed in the transverse magnetic field B~$\\sim$~2~Tesla and is to be installed perpendicularly to Pb nucleus beam. This set-up enables to measure full 3-momenta and charge signs of secondary particles. \\\\ \\\\Specific goal is to carry out detailed analysis of individual events with super high multiplicity of secondaries. These data are to be used for investigation of properties of super hot/dense matter, in particular to look for and analyze possible manifestations of quark-gluon plasma in central Pb-Pb collisions at energies of 160~GeV/nucleon.

  1. Electrochemical study and recovery of Pb using 1:2 choline chloride/urea deep eutectic solvent: A variety of Pb species PbSO4, PbO2, and PbO exhibits the analogous thermodynamic behavior

    International Nuclear Information System (INIS)

    Liao, Yu-Shun; Chen, Po-Yu; Sun, I-Wen

    2016-01-01

    Water-insoluble PbSO 4 , PbO 2 , and PbO are fairly soluble in choline chloride/urea deep eutectic solvent (ChCl/urea DES) in 1:2 molar ratio. Very interestingly, solution prepared from PbO 2 exhibits the almost identical electrochemical behavior as those from PbSO 4 and PbO, indicating that Pb(II) is formed in the DES regardless of what Pb compound is introduced. The electrochemical reduction of the Pb(II) species is determined as an irreversible process, and involves the three-dimensional (3D) instantaneous nucleation with diffusion-controlled growth. From the dependence of the diffusion coefficient on temperature, the activation energy for diffusion of PbSO 4 and PbO 2 is determined to be 33.7 and 34.1 kJ mol −1 , respectively. Electrodeposition of Pb was achieved potentiostatically and galvanostatically. The surface morphology of Pb deposits significantly depends on the applied potential and current. The coulombic efficiency of Pb electrodeposition is higher than 90%. Electrodeposition of Pb from a wet DES containing a mixture of three different Pb sources is also investigated. The XRD analysis confirmed that the electrodeposits consisted of metallic Pb.

  2. Speciation of Pb in industrially polluted soils

    DEFF Research Database (Denmark)

    Jensen, Pernille Erland; Ottosen, Lisbeth M.; Pedersen, Anne Juul

    2006-01-01

    This study was aimed at elucidating the importance of original Pb-speciation versus soil-characteristics to mobility and distribution of Pb in industrially polluted soils. Ten industrially polluted Danish surface soils were characterized and Pb speciation was evaluated through SEM-EDX studies...

  3. Quarkonia production at forward rapidity in Pb + Pb collisions at s ...

    Indian Academy of Sciences (India)

    Muons from the decay of charmonium resonances are detected in ALICE experiment in + and Pb + Pb collisions with a muon spectrometer, covering the forward rapidity region (2.5 < < 4). The analysis of the inclusive / production in the first Pb + Pb data collected in the fall of 2010 at a centre of mass energy of s N ...

  4. Recent ALICE results on Pb-Pb and p-Pb Ultra Peripheral Collisions

    CERN Multimedia

    CERN. Geneva

    2013-01-01

    The strong electromagnetic fields surrounding the Pb-ions acceleratedat the LHC allow two-photon, photon-proton and photon-lead interactions to be studied in a new kinematic regime. These interactions can be studied in ultra-peripheral collisions,where the impact parameters are larger than the sum of the nuclear radii and hadronic interactions are suppressed. During the lead-lead runs at the LHC in 2010 and 2011, and during the proton-lead run in 2013, the ALICE experiment implemented dedicated triggers to select ultra-peripheral collisions. Based on signals from the Muon spectrometer, the Time-of-Flight detector, the Silicon Pixel detector, and the VZERO scintillator array. The cross section for photoproduction of J/Psi mesons at mid- and forward-rapidities in Pb-Pb collisions will be presented. The results will be compared to model calculations and their implications for the study of nuclear gluon shadowing will be discussed. First results on J/Psi photoproduction in p-Pb collisions will also be discussed ...

  5. Event texture search for critical fluctuations in Pb + Pb collisions

    CERN Document Server

    Kopytine, M L; Bearden, I G; Bøggild, H; Boissevain, J G; Conin, L; Dodd, J; Erazmus, B; Esumi, S C; Fabjan, Christian Wolfgang; Ferenc, D; Fields, D E; Franz, A; Gaardhøje, J J; Hansen, A G; Hansen, O; Hardtke, D; van Hecke, H; Holzer, E B; Humanic, T J; Hummel, P; Jacak, B V; Jayanti, R; Kaimi, K; Kaneta, M; Kohama, T; Kopytine, M L; Leltchouk, M; Ljubicic, A; Lörstad, B; Maeda, N; Martin, L; Medvedev, A; Murray, M; Ohnishi, H; Paic, G; Pandey, S U; Piuz, François; Pluta, J; Polychronakos, V; Potekhin, M V; Poulard, G; Reichhold, D M; Sakaguchi, A; Schmidt-Sørensen, J; Simon-Gillo, J; Sondheim, W E; Sugitate, T; Sullivan, J P; Sumi, Y; Willis, W J; Wolf, K L; Xu, N; Zachary, D S

    2002-01-01

    NA44 uses a 512 channel Si pad array covering $1.5 <\\eta < 3.3$ to study charged hadron production in 158 A GeV Pb+Pb collisions at the CERN SPS. We apply a multiresolution analysis, based on a Discrete Wavelet Transformation, to probe the texture of particle distributions event-by-event, by simultaneous localization of features in space and scale. Scanning a broad range of multiplicities, we look for a possible critical behaviour in the power spectra of local density fluctuations. The data are compared with detailed simulations of detector response, using heavy ion event generators, and with a reference sample created via event mixing. An upper limit is set on the probability and magnitude of dynamical fluctuations.

  6. Determination of the magnetic penetration depth in a superconducting Pb film

    International Nuclear Information System (INIS)

    Brisbois, J.; Silhanek, A. V.; Raes, B.; Van de Vondel, J.; Moshchalkov, V. V.

    2014-01-01

    By means of scanning Hall probe microscopy technique, we accurately map the magnetic field pattern produced by Meissner screening currents in a thin superconducting Pb stripe. The obtained field profile allows us to quantitatively estimate the Pearl length Λ without the need of pre-calibrating the Hall sensor. This fact contrasts with the information acquired through the spatial field dependence of an individual flux quantum where the scanning height and the magnetic penetration depth combine in a single inseparable parameter. The derived London penetration depth λ L coincides with the values previously reported for bulk Pb once the kinetic suppression of the order parameter is properly taken into account

  7. Charged particle production in Pb-Pb and p-Pb collisions measured by the ATLAS detector

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00287239; The ATLAS collaboration

    2016-01-01

    The ATLAS experiment at the Large Hadron Collider measures charged hadron spectra in Pb+Pb and p+Pb collisions. The results are compared to the p+p spectra of charged hadrons at the same centre-of-mass energy. Charged hadron distributions from Pb+Pb are compared to charged particle cross-sections in p+p collisions at $\\sqrt{s}=2.76$ TeV, reference cross-section for p+Pb at $\\sqrt{s_{_\\text{NN}}}=5.02$ TeV is reconstructed using $\\sqrt{s}=2.76$ TeV and 7 TeV p+p results. These allow for a detailed comparison of the collision systems in a wide transverse momentum and rapidity ranges in different centrality intervals. The nuclear modification factors \\rPbPb\\ and \\rpA\\ are presented as a function of centrality, $p_{_\\text{T}}$, $\\eta$. The charged particle \\rPbPb\\ are found to vary significantly as a function of transverse momentum, shows a pronounced minimum at about 7 GeV. Above 60 GeV, $R_{_\\text{AA}}$ is consistent with a flat, centrality-dependent, value within the uncertainties. $R_{_\\text{pPb}}$ results sh...

  8. First measurement of jet mass in Pb-Pb and p-Pb collisions at the LHC

    Science.gov (United States)

    Acharya, S.; Adamová, D.; Aggarwal, M. M.; Aglieri Rinella, G.; Agnello, M.; Agrawal, N.; Ahammed, Z.; Ahmad, N.; Ahn, S. U.; Aiola, S.; Akindinov, A.; Alam, S. N.; Albuquerque, D. S. D.; Aleksandrov, D.; Alessandro, B.; Alexandre, D.; Alfaro Molina, R.; Alici, A.; Alkin, A.; Alme, J.; Alt, T.; Altsybeev, I.; Alves Garcia Prado, C.; An, M.; Andrei, C.; Andrews, H. A.; Andronic, A.; Anguelov, V.; Anson, C.; Antičić, T.; Antinori, F.; Antonioli, P.; Anwar, R.; Aphecetche, L.; Appelshäuser, H.; Arcelli, S.; Arnaldi, R.; Arnold, O. W.; Arsene, I. C.; Arslandok, M.; Audurier, B.; Augustinus, A.; Averbeck, R.; Azmi, M. D.; Badalà, A.; Baek, Y. W.; Bagnasco, S.; Bailhache, R.; Bala, R.; Baldisseri, A.; Ball, M.; Baral, R. C.; Barbano, A. M.; Barbera, R.; Barile, F.; Barioglio, L.; Barnaföldi, G. G.; Barnby, L. S.; Barret, V.; Bartalini, P.; Barth, K.; Bartke, J.; Bartsch, E.; Basile, M.; Bastid, N.; Basu, S.; Bathen, B.; Batigne, G.; Batista Camejo, A.; Batyunya, B.; Batzing, P. C.; Bearden, I. G.; Beck, H.; Bedda, C.; Behera, N. K.; Belikov, I.; Bellini, F.; Bello Martinez, H.; Bellwied, R.; Beltran, L. G. E.; Belyaev, V.; Bencedi, G.; Beole, S.; Bercuci, A.; Berdnikov, Y.; Berenyi, D.; Bertens, R. A.; Berzano, D.; Betev, L.; Bhasin, A.; Bhat, I. R.; Bhati, A. K.; Bhattacharjee, B.; Bhom, J.; Bianchi, L.; Bianchi, N.; Bianchin, C.; Bielčík, J.; Bielčíková, J.; Bilandzic, A.; Biro, G.; Biswas, R.; Biswas, S.; Blair, J. T.; Blau, D.; Blume, C.; Boca, G.; Bock, F.; Bogdanov, A.; Boldizsár, L.; Bombara, M.; Bonomi, G.; Bonora, M.; Book, J.; Borel, H.; Borissov, A.; Borri, M.; Botta, E.; Bourjau, C.; Braun-Munzinger, P.; Bregant, M.; Broker, T. A.; Browning, T. A.; Broz, M.; Brucken, E. J.; Bruna, E.; Bruno, G. E.; Budnikov, D.; Buesching, H.; Bufalino, S.; Buhler, P.; Buitron, S. A. I.; Buncic, P.; Busch, O.; Buthelezi, Z.; Butt, J. B.; Buxton, J. T.; Cabala, J.; Caffarri, D.; Caines, H.; Caliva, A.; Calvo Villar, E.; Camerini, P.; Capon, A. A.; Carena, F.; Carena, W.; Carnesecchi, F.; Castillo Castellanos, J.; Castro, A. J.; Casula, E. A. R.; Ceballos Sanchez, C.; Cerello, P.; Chang, B.; Chapeland, S.; Chartier, M.; Charvet, J. L.; Chattopadhyay, S.; Chattopadhyay, S.; Chauvin, A.; Cherney, M.; Cheshkov, C.; Cheynis, B.; Chibante Barroso, V.; Chinellato, D. D.; Cho, S.; Chochula, P.; Choi, K.; Chojnacki, M.; Choudhury, S.; Christakoglou, P.; Christensen, C. H.; Christiansen, P.; Chujo, T.; Chung, S. U.; Cicalo, C.; Cifarelli, L.; Cindolo, F.; Cleymans, J.; Colamaria, F.; Colella, D.; Collu, A.; Colocci, M.; Concas, M.; Conesa Balbastre, G.; Conesa Del Valle, Z.; Connors, M. E.; Contreras, J. G.; Cormier, T. M.; Corrales Morales, Y.; Cortés Maldonado, I.; Cortese, P.; Cosentino, M. R.; Costa, F.; Costanza, S.; Crkovská, J.; Crochet, P.; Cuautle, E.; Cunqueiro, L.; Dahms, T.; Dainese, A.; Danisch, M. C.; Danu, A.; Das, D.; Das, I.; Das, S.; Dash, A.; Dash, S.; de, S.; de Caro, A.; de Cataldo, G.; de Conti, C.; de Cuveland, J.; de Falco, A.; de Gruttola, D.; De Marco, N.; de Pasquale, S.; de Souza, R. D.; Degenhardt, H. F.; Deisting, A.; Deloff, A.; Deplano, C.; Dhankher, P.; di Bari, D.; di Mauro, A.; di Nezza, P.; di Ruzza, B.; Diaz Corchero, M. A.; Dietel, T.; Dillenseger, P.; Divià, R.; Djuvsland, Ø.; Dobrin, A.; Domenicis Gimenez, D.; Dönigus, B.; Dordic, O.; Drozhzhova, T.; Dubey, A. K.; Dubla, A.; Ducroux, L.; Duggal, A. K.; Dupieux, P.; Ehlers, R. J.; Elia, D.; Endress, E.; Engel, H.; Epple, E.; Erazmus, B.; Erhardt, F.; Espagnon, B.; Esumi, S.; Eulisse, G.; Eum, J.; Evans, D.; Evdokimov, S.; Fabbietti, L.; Faivre, J.; Fantoni, A.; Fasel, M.; Feldkamp, L.; Feliciello, A.; Feofilov, G.; Ferencei, J.; Fernández Téllez, A.; Ferreiro, E. G.; Ferretti, A.; Festanti, A.; Feuillard, V. J. G.; Figiel, J.; Figueredo, M. A. S.; Filchagin, S.; Finogeev, D.; Fionda, F. M.; Fiore, E. M.; Floris, M.; Foertsch, S.; Foka, P.; Fokin, S.; Fragiacomo, E.; Francescon, A.; Francisco, A.; Frankenfeld, U.; Fronze, G. G.; Fuchs, U.; Furget, C.; Furs, A.; Fusco Girard, M.; Gaardhøje, J. J.; Gagliardi, M.; Gago, A. M.; Gajdosova, K.; Gallio, M.; Galvan, C. D.; Ganoti, P.; Gao, C.; Garabatos, C.; Garcia-Solis, E.; Garg, K.; Garg, P.; Gargiulo, C.; Gasik, P.; Gauger, E. F.; Gay Ducati, M. B.; Germain, M.; Ghosh, P.; Ghosh, S. K.; Gianotti, P.; Giubellino, P.; Giubilato, P.; Gladysz-Dziadus, E.; Glässel, P.; Goméz Coral, D. M.; Gomez Ramirez, A.; Gonzalez, A. S.; Gonzalez, V.; González-Zamora, P.; Gorbunov, S.; Görlich, L.; Gotovac, S.; Grabski, V.; Graczykowski, L. K.; Graham, K. L.; Greiner, L.; Grelli, A.; Grigoras, C.; Grigoriev, V.; Grigoryan, A.; Grigoryan, S.; Grion, N.; Gronefeld, J. M.; Grosa, F.; Grosse-Oetringhaus, J. F.; Grosso, R.; Gruber, L.; Grull, F. R.; Guber, F.; Guernane, R.; Guerzoni, B.; Gulbrandsen, K.; Gunji, T.; Gupta, A.; Gupta, R.; Guzman, I. B.; Haake, R.; Hadjidakis, C.; Hamagaki, H.; Hamar, G.; Hamon, J. C.; Harris, J. W.; Harton, A.; Hatzifotiadou, D.; Hayashi, S.; Heckel, S. T.; Hellbär, E.; Helstrup, H.; Herghelegiu, A.; Herrera Corral, G.; Herrmann, F.; Hess, B. A.; Hetland, K. F.; Hillemanns, H.; Hippolyte, B.; Hladky, J.; Hohlweger, B.; Horak, D.; Hornung, S.; Hosokawa, R.; Hristov, P.; Hughes, C.; Humanic, T. J.; Hussain, N.; Hussain, T.; Hutter, D.; Hwang, D. S.; Ilkaev, R.; Inaba, M.; Ippolitov, M.; Irfan, M.; Isakov, V.; Ivanov, M.; Ivanov, V.; Izucheev, V.; Jacak, B.; Jacazio, N.; Jacobs, P. M.; Jadhav, M. B.; Jadlovska, S.; Jadlovsky, J.; Jaelani, S.; Jahnke, C.; Jakubowska, M. J.; Janik, M. A.; Jayarathna, P. H. S. Y.; Jena, C.; Jena, S.; Jercic, M.; Jimenez Bustamante, R. T.; Jones, P. G.; Jusko, A.; Kalinak, P.; Kalweit, A.; Kang, J. H.; Kaplin, V.; Kar, S.; Karasu Uysal, A.; Karavichev, O.; Karavicheva, T.; Karayan, L.; Karpechev, E.; Kebschull, U.; Keidel, R.; Keijdener, D. L. D.; Keil, M.; Ketzer, B.; Khan, P.; Khan, S. A.; Khanzadeev, A.; Kharlov, Y.; Khatun, A.; Khuntia, A.; Kielbowicz, M. M.; Kileng, B.; Kim, D.; Kim, D. W.; Kim, D. J.; Kim, H.; Kim, J. S.; Kim, J.; Kim, M.; Kim, M.; Kim, S.; Kim, T.; Kirsch, S.; Kisel, I.; Kiselev, S.; Kisiel, A.; Kiss, G.; Klay, J. L.; Klein, C.; Klein, J.; Klein-Bösing, C.; Klewin, S.; Kluge, A.; Knichel, M. L.; Knospe, A. G.; Kobdaj, C.; Kofarago, M.; Kollegger, T.; Kolojvari, A.; Kondratiev, V.; Kondratyeva, N.; Kondratyuk, E.; Konevskikh, A.; Kopcik, M.; Kour, M.; Kouzinopoulos, C.; Kovalenko, O.; Kovalenko, V.; Kowalski, M.; Koyithatta Meethaleveedu, G.; Králik, I.; Kravčáková, A.; Krivda, M.; Krizek, F.; Kryshen, E.; Krzewicki, M.; Kubera, A. M.; Kučera, V.; Kuhn, C.; Kuijer, P. G.; Kumar, A.; Kumar, J.; Kumar, L.; Kumar, S.; Kundu, S.; Kurashvili, P.; Kurepin, A.; Kurepin, A. B.; Kuryakin, A.; Kushpil, S.; Kweon, M. J.; Kwon, Y.; La Pointe, S. L.; La Rocca, P.; Lagana Fernandes, C.; Lakomov, I.; Langoy, R.; Lapidus, K.; Lara, C.; Lardeux, A.; Lattuca, A.; Laudi, E.; Lavicka, R.; Lazaridis, L.; Lea, R.; Leardini, L.; Lee, S.; Lehas, F.; Lehner, S.; Lehrbach, J.; Lemmon, R. C.; Lenti, V.; Leogrande, E.; León Monzón, I.; Lévai, P.; Li, S.; Li, X.; Lien, J.; Lietava, R.; Lindal, S.; Lindenstruth, V.; Lippmann, C.; Lisa, M. A.; Litichevskyi, V.; Ljunggren, H. M.; Llope, W. J.; Lodato, D. F.; Loenne, P. I.; Loginov, V.; Loizides, C.; Loncar, P.; Lopez, X.; López Torres, E.; Lowe, A.; Luettig, P.; Lunardon, M.; Luparello, G.; Lupi, M.; Lutz, T. H.; Maevskaya, A.; Mager, M.; Mahajan, S.; Mahmood, S. M.; Maire, A.; Majka, R. D.; Malaev, M.; Maldonado Cervantes, I.; Malinina, L.; Mal'Kevich, D.; Malzacher, P.; Mamonov, A.; Manko, V.; Manso, F.; Manzari, V.; Mao, Y.; Marchisone, M.; Mareš, J.; Margagliotti, G. V.; Margotti, A.; Margutti, J.; Marín, A.; Markert, C.; Marquard, M.; Martin, N. A.; Martinengo, P.; Martinez, J. A. L.; Martínez, M. I.; Martínez García, G.; Martinez Pedreira, M.; Mas, A.; Masciocchi, S.; Masera, M.; Masoni, A.; Mastroserio, A.; Mathis, A. M.; Matyja, A.; Mayer, C.; Mazer, J.; Mazzilli, M.; Mazzoni, M. A.; Meddi, F.; Melikyan, Y.; Menchaca-Rocha, A.; Meninno, E.; Mercado Pérez, J.; Meres, M.; Mhlanga, S.; Miake, Y.; Mieskolainen, M. M.; Mihaylov, D. L.; Mikhaylov, K.; Milano, L.; Milosevic, J.; Mischke, A.; Mishra, A. N.; Miśkowiec, D.; Mitra, J.; Mitu, C. M.; Mohammadi, N.; Mohanty, B.; Mohisin Khan, M.; Montes, E.; Moreira de Godoy, D. A.; Moreno, L. A. P.; Moretto, S.; Morreale, A.; Morsch, A.; Muccifora, V.; Mudnic, E.; Mühlheim, D.; Muhuri, S.; Mukherjee, M.; Mulligan, J. D.; Munhoz, M. G.; Münning, K.; Munzer, R. H.; Murakami, H.; Murray, S.; Musa, L.; Musinsky, J.; Myers, C. J.; Naik, B.; Nair, R.; Nandi, B. K.; Nania, R.; Nappi, E.; Naru, M. U.; Natal da Luz, H.; Nattrass, C.; Navarro, S. R.; Nayak, K.; Nayak, R.; Nayak, T. K.; Nazarenko, S.; Nedosekin, A.; Negrao de Oliveira, R. A.; Nellen, L.; Nesbo, S. V.; Ng, F.; Nicassio, M.; Niculescu, M.; Niedziela, J.; Nielsen, B. S.; Nikolaev, S.; Nikulin, S.; Nikulin, V.; Noferini, F.; Nomokonov, P.; Nooren, G.; Noris, J. C. C.; Norman, J.; Nyanin, A.; Nystrand, J.; Oeschler, H.; Oh, S.; Ohlson, A.; Okubo, T.; Olah, L.; Oleniacz, J.; Oliveira da Silva, A. C.; Oliver, M. H.; Onderwaater, J.; Oppedisano, C.; Orava, R.; Oravec, M.; Ortiz Velasquez, A.; Oskarsson, A.; Otwinowski, J.; Oyama, K.; Pachmayer, Y.; Pacik, V.; Pagano, D.; Pagano, P.; Paić, G.; Palni, P.; Pan, J.; Pandey, A. K.; Panebianco, S.; Papikyan, V.; Pappalardo, G. S.; Pareek, P.; Park, J.; Park, W. J.; Parmar, S.; Passfeld, A.; Pathak, S. P.; Paticchio, V.; Patra, R. N.; Paul, B.; Pei, H.; Peitzmann, T.; Peng, X.; Pereira, L. G.; Pereira da Costa, H.; Peresunko, D.; Perez Lezama, E.; Peskov, V.; Pestov, Y.; Petráček, V.; Petrov, V.; Petrovici, M.; Petta, C.; Pezzi, R. P.; Piano, S.; Pikna, M.; Pillot, P.; Pimentel, L. O. D. L.; Pinazza, O.; Pinsky, L.; Piyarathna, D. B.; Płoskoń, M.; Planinic, M.; Pluta, J.; Pochybova, S.; Podesta-Lerma, P. L. M.; Poghosyan, M. G.; Polichtchouk, B.; Poljak, N.; Poonsawat, W.; Pop, A.; Poppenborg, H.; Porteboeuf-Houssais, S.; Porter, J.; Pospisil, J.; Pozdniakov, V.; Prasad, S. K.; Preghenella, R.; Prino, F.; Pruneau, C. A.; Pshenichnov, I.; Puccio, M.; Puddu, G.; Pujahari, P.; Punin, V.; Putschke, J.; Qvigstad, H.; Rachevski, A.; Raha, S.; Rajput, S.; Rak, J.; Rakotozafindrabe, A.; Ramello, L.; Rami, F.; Rana, D. B.; Raniwala, R.; Raniwala, S.; Räsänen, S. S.; Rascanu, B. T.; Rathee, D.; Ratza, V.; Ravasenga, I.; Read, K. F.; Redlich, K.; Rehman, A.; Reichelt, P.; Reidt, F.; Ren, X.; Renfordt, R.; Reolon, A. R.; Reshetin, A.; Reygers, K.; Riabov, V.; Ricci, R. A.; Richert, T.; Richter, M.; Riedler, P.; Riegler, W.; Riggi, F.; Ristea, C.; Rodríguez Cahuantzi, M.; Røed, K.; Rogochaya, E.; Rohr, D.; Röhrich, D.; Rokita, P. S.; Ronchetti, F.; Ronflette, L.; Rosnet, P.; Rossi, A.; Rotondi, A.; Roukoutakis, F.; Roy, A.; Roy, C.; Roy, P.; Rubio Montero, A. J.; Rueda, O. V.; Rui, R.; Russo, R.; Rustamov, A.; Ryabinkin, E.; Ryabov, Y.; Rybicki, A.; Saarinen, S.; Sadhu, S.; Sadovsky, S.; Šafařík, K.; Saha, S. K.; Sahlmuller, B.; Sahoo, B.; Sahoo, P.; Sahoo, R.; Sahoo, S.; Sahu, P. K.; Saini, J.; Sakai, S.; Saleh, M. A.; Salzwedel, J.; Sambyal, S.; Samsonov, V.; Sandoval, A.; Sarkar, D.; Sarkar, N.; Sarma, P.; Sas, M. H. P.; Scapparone, E.; Scarlassara, F.; Scharenberg, R. P.; Scheid, H. S.; Schiaua, C.; Schicker, R.; Schmidt, C.; Schmidt, H. R.; Schmidt, M. O.; Schmidt, M.; Schuchmann, S.; Schukraft, J.; Schutz, Y.; Schwarz, K.; Schweda, K.; Scioli, G.; Scomparin, E.; Scott, R.; Šefčík, M.; Seger, J. E.; Sekiguchi, Y.; Sekihata, D.; Selyuzhenkov, I.; Senosi, K.; Senyukov, S.; Serradilla, E.; Sett, P.; Sevcenco, A.; Shabanov, A.; Shabetai, A.; Shadura, O.; Shahoyan, R.; Shangaraev, A.; Sharma, A.; Sharma, A.; Sharma, M.; Sharma, M.; Sharma, N.; Sheikh, A. I.; Shigaki, K.; Shou, Q.; Shtejer, K.; Sibiriak, Y.; Siddhanta, S.; Sielewicz, K. M.; Siemiarczuk, T.; Silvermyr, D.; Silvestre, C.; Simatovic, G.; Simonetti, G.; Singaraju, R.; Singh, R.; Singhal, V.; Sinha, T.; Sitar, B.; Sitta, M.; Skaali, T. B.; Slupecki, M.; Smirnov, N.; Snellings, R. J. M.; Snellman, T. W.; Song, J.; Song, M.; Soramel, F.; Sorensen, S.; Sozzi, F.; Spiriti, E.; Sputowska, I.; Srivastava, B. K.; Stachel, J.; Stan, I.; Stankus, P.; Stenlund, E.; Stiller, J. H.; Stocco, D.; Strmen, P.; Suaide, A. A. P.; Sugitate, T.; Suire, C.; Suleymanov, M.; Suljic, M.; Sultanov, R.; Šumbera, M.; Sumowidagdo, S.; Suzuki, K.; Swain, S.; Szabo, A.; Szarka, I.; Szczepankiewicz, A.; Szymanski, M.; Tabassam, U.; Takahashi, J.; Tambave, G. J.; Tanaka, N.; Tarhini, M.; Tariq, M.; Tarzila, M. G.; Tauro, A.; Tejeda Muñoz, G.; Telesca, A.; Terasaki, K.; Terrevoli, C.; Teyssier, B.; Thakur, D.; Thakur, S.; Thomas, D.; Tieulent, R.; Tikhonov, A.; Timmins, A. R.; Toia, A.; Tripathy, S.; Trogolo, S.; Trombetta, G.; Trubnikov, V.; Trzaska, W. H.; Trzeciak, B. A.; Tsuji, T.; Tumkin, A.; Turrisi, R.; Tveter, T. S.; Ullaland, K.; Umaka, E. N.; Uras, A.; Usai, G. L.; Utrobicic, A.; Vala, M.; van der Maarel, J.; van Hoorne, J. W.; van Leeuwen, M.; Vanat, T.; Vande Vyvre, P.; Varga, D.; Vargas, A.; Vargyas, M.; Varma, R.; Vasileiou, M.; Vasiliev, A.; Vauthier, A.; Vázquez Doce, O.; Vechernin, V.; Veen, A. M.; Velure, A.; Vercellin, E.; Vergara Limón, S.; Vernet, R.; Vértesi, R.; Verweij, M.; Vickovic, L.; Vigolo, S.; Viinikainen, J.; Vilakazi, Z.; Villalobos Baillie, O.; Villatoro Tello, A.; Vinogradov, A.; Vinogradov, L.; Virgili, T.; Vislavicius, V.; Vodopyanov, A.; Völkl, M. A.; Voloshin, K.; Voloshin, S. A.; Volpe, G.; von Haller, B.; Vorobyev, I.; Voscek, D.; Vranic, D.; Vrláková, J.; Wagner, B.; Wagner, J.; Wang, H.; Wang, M.; Watanabe, D.; Watanabe, Y.; Weber, M.; Weber, S. G.; Weiser, D. F.; Wessels, J. P.; Westerhoff, U.; Whitehead, A. M.; Wiechula, J.; Wikne, J.; Wilk, G.; Wilkinson, J.; Willems, G. A.; Williams, M. C. S.; Windelband, B.; Witt, W. E.; Yalcin, S.; Yang, P.; Yano, S.; Yin, Z.; Yokoyama, H.; Yoo, I.-K.; Yoon, J. H.; Yurchenko, V.; Zaccolo, V.; Zaman, A.; Zampolli, C.; Zanoli, H. J. C.; Zardoshti, N.; Zarochentsev, A.; Závada, P.; Zaviyalov, N.; Zbroszczyk, H.; Zhalov, M.; Zhang, H.; Zhang, X.; Zhang, Y.; Zhang, C.; Zhang, Z.; Zhao, C.; Zhigareva, N.; Zhou, D.; Zhou, Y.; Zhou, Z.; Zhu, H.; Zhu, J.; Zhu, X.; Zichichi, A.; Zimmermann, A.; Zimmermann, M. B.; Zimmermann, S.; Zinovjev, G.; Zmeskal, J.; Alice Collaboration

    2018-01-01

    This letter presents the first measurement of jet mass in Pb-Pb and p-Pb collisions at √{sNN } = 2.76 TeV and √{sNN } = 5.02 TeV, respectively. Both the jet energy and the jet mass are expected to be sensitive to jet quenching in the hot Quantum Chromodynamics (QCD) matter created in nuclear collisions at collider energies. Jets are reconstructed from charged particles using the anti-kT jet algorithm and resolution parameter R = 0.4. The jets are measured in the pseudorapidity range |ηjet | < 0.5 and in three intervals of transverse momentum between 60 GeV/c and 120 GeV/c. The measurement of the jet mass in central Pb-Pb collisions is compared to the jet mass as measured in p-Pb reference collisions, to vacuum event generators, and to models including jet quenching. It is observed that the jet mass in central Pb-Pb collisions is consistent within uncertainties with p-Pb reference measurements. Furthermore, the measured jet mass in Pb-Pb collisions is not reproduced by the quenching models considered in this letter and is found to be consistent with PYTHIA expectations within systematic uncertainties.

  9. Tracing source and migration of Pb during waste incineration using stable Pb isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yang [State Key Laboratory of Pollution Control and Resources Reuse, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Institute of Waste Treatment and Reclamation, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Zhang, Hua, E-mail: zhanghua_tj@tongji.edu.cn [State Key Laboratory of Pollution Control and Resources Reuse, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Institute of Waste Treatment and Reclamation, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Shao, Li-Ming; He, Pin-Jing [Institute of Waste Treatment and Reclamation, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Research and Training Center on Rural Waste Management, Ministry of Housing and Urban-Rural Development of P.R. China, 1239 Siping Road, Shanghai 200092 (China)

    2017-04-05

    Highlights: • The migration of Pb during waste incineration was investigated using Pb isotopes. • Source tracing of Pb during incineration by isotopic technology was feasible. • Contributions of MSW components were measured to trace Pb sources quantitatively. • Isotopic technology helps understand the migration of Pb during thermal treatment. - Abstract: Emission of Pb is a significant environmental concern during solid waste incineration. To target Pb emission control strategies effectively, the major sources of Pb in the waste incineration byproducts must be traced and quantified. However, identifying the migration of Pb in each waste component is difficult because of the heterogeneity of the waste. This study used a laboratory-scale incinerator to simulate the incineration of municipal solid waste (MSW). The Pb isotope ratios of the major waste components ({sup 207}Pb/{sup 206}Pb = 0.8550–0.8627 and {sup 208}Pb/{sup 206}Pb = 2.0957–2.1131) and their incineration byproducts were measured to trace sources and quantify the Pb contribution of each component to incineration byproducts. As the proportions of food waste (FW), newspaper (NP), and polyethylene bag (PE) in the artificial MSW changed, the contribution ratios of FW and PE to Pb in fly ash changed accordingly, ranging from 31.2% to 50.6% and from 35.0% to 41.8%, respectively. The replacement of PE by PVC significantly increased the partitioning and migration ratio of Pb. The use of Pb isotope ratios as a quantitative tool for tracing Pb from raw waste to incineration byproducts is a feasible means for improving Pb pollution control.

  10. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  11. Superconductivity in Pb inverse opal

    International Nuclear Information System (INIS)

    Aliev, Ali E.; Lee, Sergey B.; Zakhidov, Anvar A.; Baughman, Ray H.

    2007-01-01

    Type-II superconducting behavior was observed in highly periodic three-dimensional lead inverse opal prepared by infiltration of melted Pb in blue (D = 160 nm), green (D = 220 nm) and red (D = 300 nm) opals and followed by the extraction of the SiO 2 spheres by chemical etching. The onset of a broad phase transition (ΔT = 0.3 K) was shifted from T c = 7.196 K for bulk Pb to T c = 7.325 K. The upper critical field H c2 (3150 Oe) measured from high-field hysteresis loops exceeds the critical field for bulk lead (803 Oe) fourfold. Two well resolved peaks observed in the hysteresis loops were ascribed to flux penetration into the cylindrical void space that can be found in inverse opal structure and into the periodic structure of Pb nanoparticles. The red inverse opal shows pronounced oscillations of magnetic moment in the mixed state at low temperatures, T 0.9T c has been observed for all of the samples studied. The magnetic field periodicity of resistivity modulation is in good agreement with the lattice parameter of the inverse opal structure. We attribute the failure to observe pronounced modulation in magneto-resistive measurement to difficulties in the precision orientation of the sample along the magnetic field

  12. Multiparticle azimuthal correlations in p-Pb and Pb-Pb collisions at the CERN Large Hadron Collider

    CERN Document Server

    Abelev, Betty Bezverkhny; Adamova, Dagmar; Aggarwal, Madan Mohan; Aglieri Rinella, Gianluca; Agnello, Michelangelo; Agostinelli, Andrea; Agrawal, Neelima; Ahammed, Zubayer; Ahmad, Nazeer; Ahmed, Ijaz; Ahn, Sang Un; Ahn, Sul-Ah; Aimo, Ilaria; Aiola, Salvatore; Ajaz, Muhammad; Akindinov, Alexander; Alam, Sk Noor; Aleksandrov, Dmitry; Alessandro, Bruno; Alexandre, Didier; Alici, Andrea; Alkin, Anton; Alme, Johan; Alt, Torsten; Altinpinar, Sedat; Altsybeev, Igor; Alves Garcia Prado, Caio; Andrei, Cristian; Andronic, Anton; Anguelov, Venelin; Anielski, Jonas; Anticic, Tome; Antinori, Federico; Antonioli, Pietro; Aphecetche, Laurent Bernard; Appelshaeuser, Harald; Arcelli, Silvia; Armesto Perez, Nestor; Arnaldi, Roberta; Aronsson, Tomas; Arsene, Ionut Cristian; Arslandok, Mesut; Augustinus, Andre; Averbeck, Ralf Peter; Awes, Terry; Azmi, Mohd Danish; Bach, Matthias Jakob; Badala, Angela; Baek, Yong Wook; Bagnasco, Stefano; Bailhache, Raphaelle Marie; Bala, Renu; Baldisseri, Alberto; Baltasar Dos Santos Pedrosa, Fernando; Baral, Rama Chandra; Barbera, Roberto; Barile, Francesco; Barnafoldi, Gergely Gabor; Barnby, Lee Stuart; Ramillien Barret, Valerie; Bartke, Jerzy Gustaw; Basile, Maurizio; Bastid, Nicole; Basu, Sumit; Bathen, Bastian; Batigne, Guillaume; Batista Camejo, Arianna; Batyunya, Boris; Batzing, Paul Christoph; Baumann, Christoph Heinrich; Bearden, Ian Gardner; Beck, Hans; Bedda, Cristina; Behera, Nirbhay Kumar; Belikov, Iouri; Bellini, Francesca; Bellwied, Rene; Belmont Moreno, Ernesto; Belmont Iii, Ronald John; Belyaev, Vladimir; Bencedi, Gyula; Beole, Stefania; Berceanu, Ionela; Bercuci, Alexandru; Berdnikov, Yaroslav; Berenyi, Daniel; Berger, Martin Emanuel; Bertens, Redmer Alexander; Berzano, Dario; Betev, Latchezar; Bhasin, Anju; Bhat, Inayat Rasool; Bhati, Ashok Kumar; Bhattacharjee, Buddhadeb; Bhom, Jihyun; Bianchi, Livio; Bianchi, Nicola; Bianchin, Chiara; Bielcik, Jaroslav; Bielcikova, Jana; Bilandzic, Ante; Bjelogrlic, Sandro; Blanco, Fernando; Blau, Dmitry; Blume, Christoph; Bock, Friederike; Bogdanov, Alexey; Boggild, Hans; Bogolyubskiy, Mikhail; Boehmer, Felix Valentin; Boldizsar, Laszlo; Bombara, Marek; Book, Julian Heinz; Borel, Herve; Borissov, Alexander; Bossu, Francesco; Botje, Michiel; Botta, Elena; Boettger, Stefan; Braun-Munzinger, Peter; Bregant, Marco; Breitner, Timo Gunther; Broker, Theo Alexander; Browning, Tyler Allen; Broz, Michal; Bruna, Elena; Bruno, Giuseppe Eugenio; Budnikov, Dmitry; Buesching, Henner; Bufalino, Stefania; Buncic, Predrag; Busch, Oliver; Buthelezi, Edith Zinhle; Caffarri, Davide; Cai, Xu; Caines, Helen Louise; Calero Diaz, Liliet; Caliva, Alberto; Calvo Villar, Ernesto; Camerini, Paolo; Carena, Francesco; Carena, Wisla; Castillo Castellanos, Javier Ernesto; Casula, Ester Anna Rita; Catanescu, Vasile Ioan; Cavicchioli, Costanza; Ceballos Sanchez, Cesar; Cepila, Jan; Cerello, Piergiorgio; Chang, Beomsu; Chapeland, Sylvain; Charvet, Jean-Luc Fernand; Chattopadhyay, Subhasis; Chattopadhyay, Sukalyan; Chelnokov, Volodymyr; Cherney, Michael Gerard; Cheshkov, Cvetan Valeriev; Cheynis, Brigitte; Chibante Barroso, Vasco Miguel; Dobrigkeit Chinellato, David; Chochula, Peter; Chojnacki, Marek; Choudhury, Subikash; Christakoglou, Panagiotis; Christensen, Christian Holm; Christiansen, Peter; Chujo, Tatsuya; Chung, Suh-Urk; Cicalo, Corrado; Cifarelli, Luisa; Cindolo, Federico; Cleymans, Jean Willy Andre; Colamaria, Fabio Filippo; Colella, Domenico; Collu, Alberto; Colocci, Manuel; Conesa Balbastre, Gustavo; Conesa Del Valle, Zaida; Connors, Megan Elizabeth; Contreras Nuno, Jesus Guillermo; Cormier, Thomas Michael; Corrales Morales, Yasser; Cortese, Pietro; Cortes Maldonado, Ismael; Cosentino, Mauro Rogerio; Costa, Filippo; Crochet, Philippe; Cruz Albino, Rigoberto; Cuautle Flores, Eleazar; Cunqueiro Mendez, Leticia; Dainese, Andrea; Dang, Ruina; Danu, Andrea; Das, Debasish; Das, Indranil; Das, Kushal; Das, Supriya; Dash, Ajay Kumar; Dash, Sadhana; De, Sudipan; Delagrange, Hugues; Deloff, Andrzej; Denes, Ervin Sandor; D'Erasmo, Ginevra; De Caro, Annalisa; De Cataldo, Giacinto; De Cuveland, Jan; De Falco, Alessandro; De Gruttola, Daniele; De Marco, Nora; De Pasquale, Salvatore; De Rooij, Raoul Stefan; Diaz Corchero, Miguel Angel; Dietel, Thomas; Dillenseger, Pascal; Divia, Roberto; Di Bari, Domenico; Di Liberto, Sergio; Di Mauro, Antonio; Di Nezza, Pasquale; Djuvsland, Oeystein; Dobrin, Alexandru Florin; Dobrowolski, Tadeusz Antoni; Domenicis Gimenez, Diogenes; Donigus, Benjamin; Dordic, Olja; Dorheim, Sverre; Dubey, Anand Kumar; Dubla, Andrea; Ducroux, Laurent; Dupieux, Pascal; Dutt Mazumder, Abhee Kanti; Hilden, Timo Eero; Ehlers Iii, Raymond James; Elia, Domenico; Engel, Heiko; Erazmus, Barbara Ewa; Erdal, Hege Austrheim; Eschweiler, Dominic; Espagnon, Bruno; Esposito, Marco; Estienne, Magali Danielle; Esumi, Shinichi; Evans, David; Evdokimov, Sergey; Fabris, Daniela; Faivre, Julien; Falchieri, Davide; Fantoni, Alessandra; Fasel, Markus; Fehlker, Dominik; Feldkamp, Linus; Felea, Daniel; Feliciello, Alessandro; Feofilov, Grigory; Ferencei, Jozef; Fernandez Tellez, Arturo; Gonzalez Ferreiro, Elena; Ferretti, Alessandro; Festanti, Andrea; Figiel, Jan; Araujo Silva Figueredo, Marcel; Filchagin, Sergey; Finogeev, Dmitry; Fionda, Fiorella; Fiore, Enrichetta Maria; Floratos, Emmanouil; Floris, Michele; Foertsch, Siegfried Valentin; Foka, Panagiota; Fokin, Sergey; Fragiacomo, Enrico; Francescon, Andrea; Frankenfeld, Ulrich Michael; Fuchs, Ulrich; Furget, Christophe; Furs, Artur; Fusco Girard, Mario; Gaardhoeje, Jens Joergen; Gagliardi, Martino; Gago Medina, Alberto Martin; Gallio, Mauro; Gangadharan, Dhevan Raja; Ganoti, Paraskevi; Garabatos Cuadrado, Jose; Garcia-Solis, Edmundo Javier; Gargiulo, Corrado; Garishvili, Irakli; Gerhard, Jochen; Germain, Marie; Gheata, Andrei George; Gheata, Mihaela; Ghidini, Bruno; Ghosh, Premomoy; Ghosh, Sanjay Kumar; Gianotti, Paola; Giubellino, Paolo; Gladysz-Dziadus, Ewa; Glassel, Peter; Gomez Ramirez, Andres; Gonzalez Zamora, Pedro; Gorbunov, Sergey; Gorlich, Lidia Maria; Gotovac, Sven; Graczykowski, Lukasz Kamil; Grelli, Alessandro; Grigoras, Alina Gabriela; Grigoras, Costin; Grigoryev, Vladislav; Grigoryan, Ara; Grigoryan, Smbat; Grynyov, Borys; Grion, Nevio; Grosse-Oetringhaus, Jan Fiete; Grossiord, Jean-Yves; Grosso, Raffaele; Guber, Fedor; Guernane, Rachid; Guerzoni, Barbara; Guilbaud, Maxime Rene Joseph; Gulbrandsen, Kristjan Herlache; Gulkanyan, Hrant; Gumbo, Mervyn; Gunji, Taku; Gupta, Anik; Gupta, Ramni; Khan, Kamal; Haake, Rudiger; Haaland, Oystein Senneset; Hadjidakis, Cynthia Marie; Haiduc, Maria; Hamagaki, Hideki; Hamar, Gergoe; Hanratty, Luke David; Hansen, Alexander; Harris, John William; Hartmann, Helvi; Harton, Austin Vincent; Hatzifotiadou, Despina; Hayashi, Shinichi; Heckel, Stefan Thomas; Heide, Markus Ansgar; Helstrup, Haavard; Herghelegiu, Andrei Ionut; Herrera Corral, Gerardo Antonio; Hess, Benjamin Andreas; Hetland, Kristin Fanebust; Hippolyte, Boris; Hladky, Jan; Hristov, Peter Zahariev; Huang, Meidana; Humanic, Thomas; Hussain, Nur; Hutter, Dirk; Hwang, Dae Sung; Ilkaev, Radiy; Ilkiv, Iryna; Inaba, Motoi; Innocenti, Gian Michele; Ionita, Costin; Ippolitov, Mikhail; Irfan, Muhammad; Ivanov, Marian; Ivanov, Vladimir; Jacholkowski, Adam Wlodzimierz; Jacobs, Peter Martin; Jahnke, Cristiane; Jang, Haeng Jin; Janik, Malgorzata Anna; Pahula Hewage, Sandun; Jena, Chitrasen; Jena, Satyajit; Jimenez Bustamante, Raul Tonatiuh; Jones, Peter Graham; Jung, Hyungtaik; Jusko, Anton; Kadyshevskiy, Vladimir; Kalcher, Sebastian; Kalinak, Peter; Kalweit, Alexander Philipp; Kamin, Jason Adrian; Kang, Ju Hwan; Kaplin, Vladimir; Kar, Somnath; Karasu Uysal, Ayben; Karavichev, Oleg; Karavicheva, Tatiana; Karpechev, Evgeny; Kebschull, Udo Wolfgang; Keidel, Ralf; Keijdener, Darius Laurens; Keil, Markus; Khan, Mohammed Mohisin; Khan, Palash; Khan, Shuaib Ahmad; Khanzadeev, Alexei; Kharlov, Yury; Kileng, Bjarte; Kim, Beomkyu; Kim, Do Won; Kim, Dong Jo; Kim, Jinsook; Kim, Mimae; Kim, Minwoo; Kim, Se Yong; Kim, Taesoo; Kirsch, Stefan; Kisel, Ivan; Kiselev, Sergey; Kisiel, Adam Ryszard; Kiss, Gabor; Klay, Jennifer Lynn; Klein, Jochen; Klein-Boesing, Christian; Kluge, Alexander; Knichel, Michael Linus; Knospe, Anders Garritt; Kobdaj, Chinorat; Kofarago, Monika; Kohler, Markus Konrad; Kollegger, Thorsten; Kolozhvari, Anatoly; Kondratev, Valerii; Kondratyeva, Natalia; Konevskikh, Artem; Kovalenko, Vladimir; Kowalski, Marek; Kox, Serge; Koyithatta Meethaleveedu, Greeshma; Kral, Jiri; Kralik, Ivan; Kravcakova, Adela; Krelina, Michal; Kretz, Matthias; Krivda, Marian; Krizek, Filip; Kryshen, Evgeny; Krzewicki, Mikolaj; Kucera, Vit; Kucheryaev, Yury; Kugathasan, Thanushan; Kuhn, Christian Claude; Kuijer, Paulus Gerardus; Kulakov, Igor; Kumar, Jitendra; Kurashvili, Podist; Kurepin, Alexander; Kurepin, Alexey; Kuryakin, Alexey; Kushpil, Svetlana; Kweon, Min Jung; Kwon, Youngil; Ladron De Guevara, Pedro; Lagana Fernandes, Caio; Lakomov, Igor; Langoy, Rune; Lara Martinez, Camilo Ernesto; Lardeux, Antoine Xavier; Lattuca, Alessandra; La Pointe, Sarah Louise; La Rocca, Paola; Lea, Ramona; Leardini, Lucia; Lee, Graham Richard; Legrand, Iosif; Lehnert, Joerg Walter; Lemmon, Roy Crawford; Lenti, Vito; Leogrande, Emilia; Leoncino, Marco; Leon Monzon, Ildefonso; Levai, Peter; Li, Shuang; Lien, Jorgen Andre; Lietava, Roman; Lindal, Svein; Lindenstruth, Volker; Lippmann, Christian; Lisa, Michael Annan; Ljunggren, Hans Martin; Lodato, Davide Francesco; Lonne, Per-Ivar; Loggins, Vera Renee; Loginov, Vitaly; Lohner, Daniel; Loizides, Constantinos; Lopez, Xavier Bernard; Lopez Torres, Ernesto; Lu, Xianguo; Luettig, Philipp Johannes; Lunardon, Marcello; Luparello, Grazia; Ma, Rongrong; Maevskaya, Alla; Mager, Magnus; Mahapatra, Durga Prasad; Mahmood, Sohail Musa; Maire, Antonin; Majka, Richard Daniel; Malaev, Mikhail; Maldonado Cervantes, Ivonne Alicia; Malinina, Liudmila; Mal'Kevich, Dmitry; Malzacher, Peter; Mamonov, Alexander; Manceau, Loic Henri Antoine; Manko, Vladislav; Manso, Franck; Manzari, Vito; Marchisone, Massimiliano; Mares, Jiri; Margagliotti, Giacomo Vito; Margotti, Anselmo; Marin, Ana Maria; Markert, Christina; Marquard, Marco; Martashvili, Irakli; Martin, Nicole Alice; Martinengo, Paolo; Martinez Hernandez, Mario Ivan; Martinez-Garcia, Gines; Martin Blanco, Javier; Martynov, Yevgen; Mas, Alexis Jean-Michel; Masciocchi, Silvia; Masera, Massimo; Masoni, Alberto; Massacrier, Laure Marie; Mastroserio, Annalisa; Matyja, Adam Tomasz; Mayer, Christoph; Mazer, Joel Anthony; Mazzoni, Alessandra Maria; Meddi, Franco; Menchaca-Rocha, Arturo Alejandro; Meninno, Elisa; Mercado-Perez, Jorge; Meres, Michal; Miake, Yasuo; Mikhaylov, Konstantin; Milano, Leonardo; Milosevic, Jovan; Mischke, Andre; Mishra, Aditya Nath; Miskowiec, Dariusz Czeslaw; Mitra, Jubin; Mitu, Ciprian Mihai; Mlynarz, Jocelyn; Mohammadi, Naghmeh; Mohanty, Bedangadas; Molnar, Levente; Montano Zetina, Luis Manuel; Montes Prado, Esther; Morando, Maurizio; Moreira De Godoy, Denise Aparecida; Moretto, Sandra; Morreale, Astrid; Morsch, Andreas; Muccifora, Valeria; Mudnic, Eugen; Muhlheim, Daniel Michael; Muhuri, Sanjib; Mukherjee, Maitreyee; Muller, Hans; Gameiro Munhoz, Marcelo; Murray, Sean; Musa, Luciano; Musinsky, Jan; Nandi, Basanta Kumar; Nania, Rosario; Nappi, Eugenio; Nattrass, Christine; Nayak, Kishora; Nayak, Tapan Kumar; Nazarenko, Sergey; Nedosekin, Alexander; Nicassio, Maria; Niculescu, Mihai; Nielsen, Borge Svane; Nikolaev, Sergey; Nikulin, Sergey; Nikulin, Vladimir; Nilsen, Bjorn Steven; Noferini, Francesco; Nomokonov, Petr; Nooren, Gerardus; Norman, Jaime; Nyanin, Alexander; Nystrand, Joakim Ingemar; Oeschler, Helmut Oskar; Oh, Saehanseul; Oh, Sun Kun; Okatan, Ali; Olah, Laszlo; Oleniacz, Janusz; Oliveira Da Silva, Antonio Carlos; Onderwaater, Jacobus; Oppedisano, Chiara; Ortiz Velasquez, Antonio; Oskarsson, Anders Nils Erik; Otwinowski, Jacek Tomasz; Oyama, Ken; Ozdemir, Mahmut; Sahoo, Pragati; Pachmayer, Yvonne Chiara; Pachr, Milos; Pagano, Paola; Paic, Guy; Painke, Florian; Pajares Vales, Carlos; Pal, Susanta Kumar; Palmeri, Armando; Pant, Divyash; Papikyan, Vardanush; Pappalardo, Giuseppe; Pareek, Pooja; Park, Woojin; Parmar, Sonia; Passfeld, Annika; Patalakha, Dmitry; Paticchio, Vincenzo; Paul, Biswarup; Pawlak, Tomasz Jan; Peitzmann, Thomas; Pereira Da Costa, Hugo Denis Antonio; Pereira De Oliveira Filho, Elienos; Peresunko, Dmitry Yurevich; Perez Lara, Carlos Eugenio; Pesci, Alessandro; Peskov, Vladimir; Pestov, Yury; Petracek, Vojtech; Petran, Michal; Petris, Mariana; Petrovici, Mihai; Petta, Catia; Piano, Stefano; Pikna, Miroslav; Pillot, Philippe; Pinazza, Ombretta; Pinsky, Lawrence; Piyarathna, Danthasinghe; Ploskon, Mateusz Andrzej; Planinic, Mirko; Pluta, Jan Marian; Pochybova, Sona; Podesta Lerma, Pedro Luis Manuel; Poghosyan, Martin; Pohjoisaho, Esko Heikki Oskari; Polishchuk, Boris; Poljak, Nikola; Pop, Amalia; Porteboeuf, Sarah Julie; Porter, R Jefferson; Potukuchi, Baba; Prasad, Sidharth Kumar; Preghenella, Roberto; Prino, Francesco; Pruneau, Claude Andre; Pshenichnov, Igor; Puddu, Giovanna; Pujahari, Prabhat Ranjan; Punin, Valery; Putschke, Jorn Henning; Qvigstad, Henrik; Rachevski, Alexandre; Raha, Sibaji; Rak, Jan; Rakotozafindrabe, Andry Malala; Ramello, Luciano; Raniwala, Rashmi; Raniwala, Sudhir; Rasanen, Sami Sakari; Rascanu, Bogdan Theodor; Rathee, Deepika; Rauf, Aamer Wali; Razazi, Vahedeh; Read, Kenneth Francis; Real, Jean-Sebastien; Redlich, Krzysztof; Reed, Rosi Jan; Rehman, Attiq Ur; Reichelt, Patrick Simon; Reicher, Martijn; Reidt, Felix; Renfordt, Rainer Arno Ernst; Reolon, Anna Rita; Reshetin, Andrey; Rettig, Felix Vincenz; Revol, Jean-Pierre; Reygers, Klaus Johannes; Riabov, Viktor; Ricci, Renato Angelo; Richert, Tuva Ora Herenui; Richter, Matthias Rudolph; Riedler, Petra; Riegler, Werner; Riggi, Francesco; Rivetti, Angelo; Rocco, Elena; Rodriguez Cahuantzi, Mario; Rodriguez Manso, Alis; Roeed, Ketil; Rogochaya, Elena; Sharma, Rohni; Rohr, David Michael; Roehrich, Dieter; Romita, Rosa; Ronchetti, Federico; Ronflette, Lucile; Rosnet, Philippe; Rossi, Andrea; Roukoutakis, Filimon; Roy, Ankhi; Roy, Christelle Sophie; Roy, Pradip Kumar; Rubio Montero, Antonio Juan; Rui, Rinaldo; Russo, Riccardo; Ryabinkin, Evgeny; Ryabov, Yury; Rybicki, Andrzej; Sadovskiy, Sergey; Safarik, Karel; Sahlmuller, Baldo; Sahoo, Raghunath; Sahu, Pradip Kumar; Saini, Jogender; Sakai, Shingo; Salgado Lopez, Carlos Alberto; Salzwedel, Jai Samuel Nielsen; Sambyal, Sanjeev Singh; Samsonov, Vladimir; Sanchez Castro, Xitzel; Sanchez Rodriguez, Fernando Javier; Sandor, Ladislav; Sandoval, Andres; Sano, Masato; Santagati, Gianluca; Sarkar, Debojit; Scapparone, Eugenio; Scarlassara, Fernando; Scharenberg, Rolf Paul; Schiaua, Claudiu Cornel; Schicker, Rainer Martin; Schmidt, Christian Joachim; Schmidt, Hans Rudolf; Schuchmann, Simone; Schukraft, Jurgen; Schulc, Martin; Schuster, Tim Robin; Schutz, Yves Roland; Schwarz, Kilian Eberhard; Schweda, Kai Oliver; Scioli, Gilda; Scomparin, Enrico; Scott, Rebecca Michelle; Segato, Gianfranco; Seger, Janet Elizabeth; Sekiguchi, Yuko; Selyuzhenkov, Ilya; Seo, Jeewon; Serradilla Rodriguez, Eulogio; Sevcenco, Adrian; Shabetai, Alexandre; Shabratova, Galina; Shahoyan, Ruben; Shangaraev, Artem; Sharma, Natasha; Sharma, Satish; Shigaki, Kenta; Shtejer Diaz, Katherin; Sibiryak, Yury; Siddhanta, Sabyasachi; Siemiarczuk, Teodor; Silvermyr, David Olle Rickard; Silvestre, Catherine Micaela; Simatovic, Goran; Singaraju, Rama Narayana; Singh, Ranbir; Singha, Subhash; Singhal, Vikas; Sinha, Bikash; Sarkar - Sinha, Tinku; Sitar, Branislav; Sitta, Mario; Skaali, Bernhard; Skjerdal, Kyrre; Slupecki, Maciej; Smirnov, Nikolai; Snellings, Raimond; Soegaard, Carsten; Soltz, Ron Ariel; Song, Jihye; Song, Myunggeun; Soramel, Francesca; Sorensen, Soren Pontoppidan; Spacek, Michal; Spiriti, Eleuterio; Sputowska, Iwona Anna; Spyropoulou-Stassinaki, Martha; Srivastava, Brijesh Kumar; Stachel, Johanna; Stan, Ionel; Stefanek, Grzegorz; Steinpreis, Matthew Donald; Stenlund, Evert Anders; Steyn, Gideon Francois; Stiller, Johannes Hendrik; Stocco, Diego; Stolpovskiy, Mikhail; Strmen, Peter; Alarcon Do Passo Suaide, Alexandre; Sugitate, Toru; Suire, Christophe Pierre; Suleymanov, Mais Kazim Oglu; Sultanov, Rishat; Sumbera, Michal; Susa, Tatjana; Symons, Timothy; Szabo, Alexander; Szanto De Toledo, Alejandro; Szarka, Imrich; Szczepankiewicz, Adam; Szymanski, Maciej Pawel; Takahashi, Jun; Tangaro, Marco-Antonio; Tapia Takaki, Daniel Jesus; Tarantola Peloni, Attilio; Tarazona Martinez, Alfonso; Tarzila, Madalina-Gabriela; Tauro, Arturo; Tejeda Munoz, Guillermo; Telesca, Adriana; Terrevoli, Cristina; Thaeder, Jochen Mathias; Thomas, Deepa; Tieulent, Raphael Noel; Timmins, Anthony Robert; Toia, Alberica; Trubnikov, Victor; Trzaska, Wladyslaw Henryk; Tsuji, Tomoya; Tumkin, Alexandr; Turrisi, Rosario; Tveter, Trine Spedstad; Ullaland, Kjetil; Uras, Antonio; Usai, Gianluca; Vajzer, Michal; Vala, Martin; Valencia Palomo, Lizardo; Vallero, Sara; Vande Vyvre, Pierre; Van Der Maarel, Jasper; Van Hoorne, Jacobus Willem; Van Leeuwen, Marco; Diozcora Vargas Trevino, Aurora; Vargyas, Marton; Varma, Raghava; Vasileiou, Maria; Vasiliev, Andrey; Vechernin, Vladimir; Veldhoen, Misha; Velure, Arild; Venaruzzo, Massimo; Vercellin, Ermanno; Vergara Limon, Sergio; Vernet, Renaud; Verweij, Marta; Vickovic, Linda; Viesti, Giuseppe; Viinikainen, Jussi Samuli; Vilakazi, Zabulon; Villalobos Baillie, Orlando; Vinogradov, Alexander; Vinogradov, Leonid; Vinogradov, Yury; Virgili, Tiziano; Viyogi, Yogendra; Vodopyanov, Alexander; Volkl, Martin Andreas; Voloshin, Kirill; Voloshin, Sergey; Volpe, Giacomo; Von Haller, Barthelemy; Vorobyev, Ivan; Vranic, Danilo; Vrlakova, Janka; Vulpescu, Bogdan; Vyushin, Alexey; Wagner, Boris; Wagner, Jan; Wagner, Vladimir; Wang, Mengliang; Wang, Yifei; Watanabe, Daisuke; Weber, Michael; Wessels, Johannes Peter; Westerhoff, Uwe; Wiechula, Jens; Wikne, Jon; Wilde, Martin Rudolf; Wilk, Grzegorz Andrzej; Wilkinson, Jeremy John; Williams, Crispin; Windelband, Bernd Stefan; Winn, Michael Andreas; Yaldo, Chris G; Yamaguchi, Yorito; Yang, Hongyan; Yang, Ping; Yang, Shiming; Yano, Satoshi; Yasnopolskiy, Stanislav; Yi, Jungyu; Yin, Zhongbao; Yoo, In-Kwon; Yushmanov, Igor; Zaccolo, Valentina; Zach, Cenek; Zaman, Ali; Zampolli, Chiara; Zaporozhets, Sergey; Zarochentsev, Andrey; Zavada, Petr; Zavyalov, Nikolay; Zbroszczyk, Hanna Paulina; Zgura, Sorin Ion; Zhalov, Mikhail; Zhang, Haitao; Zhang, Xiaoming; Zhang, Yonghong; Zhao, Chengxin; Zhigareva, Natalia; Zhou, Daicui; Zhou, Fengchu; Zhou, You; Zhou, Zhuo; Zhu, Hongsheng; Zhu, Jianhui; Zhu, Xiangrong; Zichichi, Antonino; Zimmermann, Alice; Zimmermann, Markus Bernhard; Zinovjev, Gennady; Zoccarato, Yannick Denis; Zyzak, Maksym

    2014-11-03

    Measurements of multi-particle azimuthal correlations (cumulants) for charged particles in p-Pb at $\\sqrt{s_{\\rm NN}} = 5.02$ TeV and Pb-Pb at $\\sqrt{s_{\\rm NN}} = 2.76$ TeV collisions are presented. They help address a question if there is evidence for global, flow-like, azimuthal correlations in the p-Pb system. Comparisons are made to measurements from the larger Pb-Pb system, where such evidence is established. In particular, the second harmonic two-particle cumulants are found to decrease with multiplicity, characteristic of a dominance of few-particle correlations in p-Pb collisions. However, when a $|\\Delta \\eta|$ gap is placed to suppress such correlations, the two-particle cumulants begin to rise at high-multiplicity, indicating the presence of global azimuthal correlations. The Pb-Pb values are higher than the p-Pb values at similar multiplicities. In both systems, the second harmonic four-particle cumulants exhibit a transition from positive to negative values when the multiplicity increases. The n...

  13. Synthesis and characterization of lead sulphide thin films from ethanolamine (ETA) complexing agent chemical bath

    Science.gov (United States)

    Gashaw Hone, Fekadu; Dejene, F. B.

    2018-02-01

    Polycrystalline lead sulphide (PbS) thin films were grown on glass substrates by chemical bath deposition route using ethanolamine (ETA) as a complexing agent. The effects of ETA molar concentration on the structural, morphological, electrical and optical properties of lead sulphide thin films were thoroughly studied. The XRD analyses revealed that all the deposited thin films were face center cubic crystal structure and their preferred orientations were varied along the (111) and (200) planes. The XRD results further confirmed that ETA concentration had a significant effects on the strain, average crystalline size and dislocation density of the deposited thin films. The SEM studies illustrated the evolution and transformation of surface morphology as ETA molar concentration increased from 0.41 M to 1.64 M. The energy dispersive x-ray analysis was used to verify the compositional elements of the deposited thin films. Optical spectroscopy investigation established that the band gap of the PbS thin films were reduced from 0.98 eV to 0.68 eV as ETA concentration increased. The photoluminescence spectra showed a well defined peak at 428 nm and shoulder around 468 nm for all PbS thin films. The electrical resistivity of the thin films found in the order of 103 Ω cm at room temperature and decreased as the ETA molar concentration was increased.

  14. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe

    International Nuclear Information System (INIS)

    Tomashik, Z.F.; Tomashik, V.N.

    1987-01-01

    Using differential-thermal and microstructural analyses and mathematical design interaction in PbTe-CdS system is studied. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe is plotted. It is shown that PbTe-CdS system phase diagram is of eutectic type. Maximal solubility of CdS in PbTe attains 13 mol%, and of PbTe in CdS is not over 1 mol%. Projection of liquidus surface of the PbTe+CdS↔PbS+CdTe triple reciprocal system consists of two primary crystallization fields: CdTe x S 1-x and PbTe x S 1-x solid solutions separated by eutectic line

  15. 208Pb(16O,15O)209Pb reaction

    International Nuclear Information System (INIS)

    Becchetti, F.D.; Harvey, B.G.; Kovar, D.; Mahoney, J.; Maguire, C.; Scott, D.K.

    1975-01-01

    The neutron levels in 209 Pb have been studied with the 208 Pb( 16 O, 15 O) reaction at a bomdarding energy of 139 MeV. Spectroscopic factors (S) have been deduced using a finite-range distorted-wave Born approximation (DWBA) with recoil. The 2g 9 / 2 , 1i 11 / 2 , 2g 7 / 2 , and 3d 3 / 2 levels are found to have S approximately-greater-than 0.9 while S approx. = 0.7 for the 1j 15 / 2 level at 1.4 MeV excitation. Evidence is found for other 1j 15 / 2 fragments being at 3.05 MeV and approx. 3.8 MeV with S approx. = 0.08 and 0.26, respectively, which would place the centroid of the 1j 15 / 2 level at E/subx/ approx. = 2.2 MeV. DWBA predicts a shift in the maxima of the angular distributions as a function of Q value which is not observed experimentally. A comparison with the proton transfer reaction 208 Pb( 16 O, 15 N) 209 Bi has been used to deduce the geometrical parameters of a neutron shell model potential appropriate for nuclei with A approximately-greater-than 200. The parameters of this Wood-Saxon potential are: V/subR/=-50.5 MeV,r/subR/=1.19 fm, a/subR/=0.75 fm, V)=-5.5 MeV, r)=1.01 fm, and a)=0.75 fm

  16. W and Z bosons with CMS in pp, pPb and PbPb collisions

    Energy Technology Data Exchange (ETDEWEB)

    Chapon, Émilien, E-mail: emilien.chapon@cern.ch

    2016-12-15

    Electroweak boson production is an important benchmark process in high-energy heavy-ion collisions at the LHC. W and Z bosons do not participate in the strong interaction and their leptonic decays provide medium-blind probes of the initial state of the collisions. The final results on the W and Z production in pPb collisions at 5.02 TeV, combining both the muon and electron channels, will be presented. When compared to theory calculations that include nuclear modifications to the parton distributions, data show a clear sensitivity to this type of effects. The final results in PbPb collisions at 2.76 TeV, compared to pp collisions at the same centre of mass energy, will also be presented. The centrality dependence confirms the binary scaling of hard probes in heavy-ion collisions, while the differential cross sections points to initial state effects small compared to the statistical precision of the available data.

  17. ALICE results on quarkonium production in pp, p-Pb and Pb-Pb collisions

    CERN Document Server

    Bruno, Giuseppe Eugenio

    2013-01-01

    The study of quarkonia, bound states of heavy (charm or bottom) quark-antiquark pairs such as the J/psi or the Upsilon?, provides insight into the earliest and hottest stages of high-energy nucleus-nucleus collisions where the formation of a Quark-Gluon Plasma is expected. High-precision data from proton-proton collisions represent an essential baseline for the measurement of nuclear modi?cations in nucleus-nucleus collisions and serve also as a crucial test for models of quarkonium hadroproduction. Another fundamental tool to understand the quarkonium production in nucleus-nucleus collisions is the the study of proton-nucleus interactions, which allows one to investigate cold nuclear matter e?ects, such as parton shadowing or gluon saturation. The ALICE detector provides excellent capabilities to study quarkonium production at the Large Hadron Collider at both central and forward rapidity. An overview on ALICE results on quarkonium production in pp, p-Pb and Pb-Pb collisions is presented. Results are compare...

  18. W and Z bosons in pp, pPb and PbPb with CMS

    CERN Document Server

    AUTHOR|(CDS)2079475

    2016-01-01

    Electroweak boson production is an important benchmark process in high-energy heavy-ion collisions at the LHC. W and Z bosons do not participate in the strong interaction and their leptonic decays provide medium-blind probes of the initial state of the collisions. The final results on the W and Z production in pPb collisions at 5.02 TeV, combining both the muon and electron channels, will be presented. When compared to theory calculations that include nuclear modifications to the parton distributions, data show a clear sensitivity to this type of effects. The final results in PbPb collisions at 2.76 TeV, compared to pp collisions at the same center of mass energy, will also be presented. The centrality dependence confirms the binary scaling of hard probes in heavy-ion collisions, while the differential cross sections points to initial state effects small compared to the statistical precision of the available data.

  19. Strangeness production in p-Pb and Pb-Pb collisions with ALICE at LHC

    CERN Document Server

    Colella, Domenico

    2017-01-01

    The main goal of the ALICE experiment is to study the properties of the hot and dense medium created in ultra-relativistic heavy-ion collisions. The measurement of the (multi-)strange particles is an important tool to understand particle production mechanisms and the dynamics of the quark-gluon plasma (QGP). We report on the production of K$^{0}_{S}$, $\\Lambda$($\\overline{\\Lambda}$), $\\Xi^{-}$($\\overline{\\Xi}^{+}$) and $\\Omega^{-}$($\\overline{\\Omega}^{+}$) in proton-lead (p-Pb) collisions at $\\sqrt{s_{\\rm NN}}$ = 5.02 TeV and lead-lead (Pb-Pb) collisions at $\\sqrt{s_{\\rm NN}}$ = 2.76 TeV measured by ALICE at the LHC. The comparison of the hyperon-to-pion ratios in the two colliding systems may provide insight into strangeness production mechanisms, while the comparison of the nuclear modification factors helps to determine the contribution of initial state effects and the suppression from strange quark energy loss in nuclear matter.

  20. J/ψ photoproduction in ultra-peripheral Pb-Pb and p-Pb collisions with the ALICE detector

    Directory of Open Access Journals (Sweden)

    Adam Jaroslav

    2014-04-01

    Full Text Available Ultra-relativistic heavy ions generate strong electromagnetic fields which offer the possibility to study gamma-gamma, gamma-nucleus and gamma-proton processes at the LHC in ultra-peripheral Pb-Pb and p-Pb collisions. Exclusive photoproduction of J/ψ vector mesons is sensitive to the gluon distribution of the target. Here we report on the ALICE measurement of J/ψ coherent photoproduction in Pb-Pb ultra-peripheral collisions at √sNN = 2.76 TeV for the rapidity ranges -3.6 < y < -2.6 and |y| < 0.9, and on preliminary results on the J/ψ photoproduction in p-Pb at √sNN = 5.02 TeV. The J/ψ mesons have been identified through their leptonic decays.

  1. Multi-strange baryon production in pp, p-Pb and Pb-Pb collisions at LHC measured with ALICE

    CERN Document Server

    Colella, Domenico

    2015-01-01

    Transverse momentum spectra and yields of charged $\\Xi$ and $\\Omega$ at mid-rapidity in pp, p-Pb and Pb-Pb collisions at the LHC have been measured by the ALICE Collaboration. These baryons are identified by reconstruction of their weak decay topology, in modes with only charged decay products, using the excellent tracking and particle identification capabilities of the detector. The recent measurements of the multi-strange baryon production relative to non-strange particles in p-Pb collisions are presented: this would help to understand the change in relative strangeness production from pp collisions to Pb-Pb collisions. Results on the nuclear modification factors for the charged $\\Xi$ and $\\Omega$ particles, compared with those for other light particles, are also reported.

  2. Multiplicity dependence of the average transverse momentum in pp, p-Pb, and Pb-Pb collisions at the LHC

    CERN Document Server

    Abelev, Betty Bezverkhny; Adamova, Dagmar; Adare, Andrew Marshall; Aggarwal, Madan Mohan; Aglieri Rinella, Gianluca; Agnello, Michelangelo; Agocs, Andras Gabor; Agostinelli, Andrea; Ahammed, Zubayer; Ahmad, Nazeer; Ahmad, Arshad; Ahmed, Ijaz; Ahn, Sang Un; Ahn, Sul-Ah; Aimo, Ilaria; Ajaz, Muhammad; Akindinov, Alexander; Aleksandrov, Dmitry; Alessandro, Bruno; Alexandre, Didier; Alici, Andrea; Alkin, Anton; Alme, Johan; Alt, Torsten; Altini, Valerio; Altinpinar, Sedat; Altsybeev, Igor; Alves Garcia Prado, Caio; Andrei, Cristian; Andronic, Anton; Anguelov, Venelin; Anielski, Jonas; Anticic, Tome; Antinori, Federico; Antonioli, Pietro; Aphecetche, Laurent Bernard; Appelshaeuser, Harald; Arbor, Nicolas; Arcelli, Silvia; Armesto Perez, Nestor; Arnaldi, Roberta; Aronsson, Tomas; Arsene, Ionut Cristian; Arslandok, Mesut; Augustinus, Andre; Averbeck, Ralf Peter; Awes, Terry; Aysto, Juha Heikki Eskeli; Azmi, Mohd Danish; Bach, Matthias Jakob; Badala, Angela; Baek, Yong Wook; Bailhache, Raphaelle Marie; Bala, Renu; Baldisseri, Alberto; Baltasar Dos Santos Pedrosa, Fernando; Ban, Jaroslav; Baral, Rama Chandra; Barbera, Roberto; Barile, Francesco; Barnafoldi, Gergely Gabor; Barnby, Lee Stuart; Ramillien Barret, Valerie; Bartke, Jerzy Gustaw; Basile, Maurizio; Bastid, Nicole; Basu, Sumit; Bathen, Bastian; Batigne, Guillaume; Batyunya, Boris; Batzing, Paul Christoph; Baumann, Christoph Heinrich; Bearden, Ian Gardner; Beck, Hans; Bedda, Cristina; Behera, Nirbhay Kumar; Belikov, Iouri; Bellini, Francesca; Bellwied, Rene; Belmont Moreno, Ernesto; Bencedi, Gyula; Beole, Stefania; Berceanu, Ionela; Bercuci, Alexandru; Berdnikov, Yaroslav; Berenyi, Daniel; Bergognon, Anais Annick Erica; Bertens, Redmer Alexander; Berzano, Dario; Betev, Latchezar; Bhasin, Anju; Bhati, Ashok Kumar; Bhom, Jihyun; Bianchi, Livio; Bianchi, Nicola; Bielcik, Jaroslav; Bielcikova, Jana; Bilandzic, Ante; Bjelogrlic, Sandro; Blanco, Fernando; Blanco, Francesco; Blau, Dmitry; Blume, Christoph; Bock, Friederike; Bogdanov, Alexey; Boggild, Hans; Bogolyubskiy, Mikhail; Boldizsar, Laszlo; Bombara, Marek; Book, Julian Heinz; Borel, Herve; Borissov, Alexander; Bornschein, Joerg; Botje, Michiel; Botta, Elena; Boettger, Stefan; Braidot, Ermes; Braun-Munzinger, Peter; Bregant, Marco; Breitner, Timo Gunther; Broker, Theo Alexander; Browning, Tyler Allen; Broz, Michal; Brun, Rene; Bruna, Elena; Bruno, Giuseppe Eugenio; Budnikov, Dmitry; Buesching, Henner; Bufalino, Stefania; Buncic, Predrag; Busch, Oliver; Buthelezi, Edith Zinhle; Caffarri, Davide; Cai, Xu; Caines, Helen Louise; Caliva, Alberto; Calvo Villar, Ernesto; Camerini, Paolo; Canoa Roman, Veronica; Cara Romeo, Giovanni; Carena, Francesco; Carena, Wisla; Carminati, Federico; Casanova Diaz, Amaya Ofelia; Castillo Castellanos, Javier Ernesto; Casula, Ester Anna Rita; Catanescu, Vasile Ioan; Cavicchioli, Costanza; Ceballos Sanchez, Cesar; Cepila, Jan; Cerello, Piergiorgio; Chang, Beomsu; Chapeland, Sylvain; Charvet, Jean-Luc Fernand; Chattopadhyay, Subhasis; Chattopadhyay, Sukalyan; Cherney, Michael Gerard; Cheshkov, Cvetan Valeriev; Cheynis, Brigitte; Chibante Barroso, Vasco Miguel; Dobrigkeit Chinellato, David; Chochula, Peter; Chojnacki, Marek; Choudhury, Subikash; Christakoglou, Panagiotis; Christensen, Christian Holm; Christiansen, Peter; Chujo, Tatsuya; Chung, Suh-Urk; Cicalo, Corrado; Cifarelli, Luisa; Cindolo, Federico; Cleymans, Jean Willy Andre; Colamaria, Fabio Filippo; Colella, Domenico; Collu, Alberto; Colocci, Manuel; Conesa Balbastre, Gustavo; Conesa Del Valle, Zaida; Connors, Megan Elizabeth; Contin, Giacomo; Contreras Nuno, Jesus Guillermo; Cormier, Thomas Michael; Corrales Morales, Yasser; Cortese, Pietro; Cortes Maldonado, Ismael; Cosentino, Mauro Rogerio; Costa, Filippo; Crochet, Philippe; Cruz Albino, Rigoberto; Cuautle Flores, Eleazar; Cunqueiro Mendez, Leticia; Dainese, Andrea; Dang, Ruina; Danu, Andrea; Das, Kushal; Das, Debasish; Das, Indranil; Dash, Ajay Kumar; Dash, Sadhana; De, Sudipan; Delagrange, Hugues; Deloff, Andrzej; Denes, Ervin Sandor; Deppman, Airton; Oliveira Valeriano De Barros, Gabriel; De Caro, Annalisa; De Cataldo, Giacinto; De Cuveland, Jan; De Falco, Alessandro; De Gruttola, Daniele; De Marco, Nora; De Pasquale, Salvatore; De Rooij, Raoul Stefan; Diaz Corchero, Miguel Angel; Dietel, Thomas; Divia, Roberto; Di Bari, Domenico; Di Giglio, Carmelo; Di Liberto, Sergio; Di Mauro, Antonio; Di Nezza, Pasquale; Djuvsland, Oeystein; Dobrin, Alexandru Florin; Dobrowolski, Tadeusz Antoni; Doenigus, Benjamin; Dordic, Olja; Dubey, Anand Kumar; Dubla, Andrea; Ducroux, Laurent; Dupieux, Pascal; Dutt Mazumder, Abhee Kanti; D'Erasmo, Ginevra; Elia, Domenico; Emschermann, David Philip; Engel, Heiko; Erazmus, Barbara Ewa; Erdal, Hege Austrheim; Eschweiler, Dominic; Espagnon, Bruno; Estienne, Magali Danielle; Esumi, Shinichi; Evans, David; Evdokimov, Sergey; Eyyubova, Gyulnara; Fabris, Daniela; Faivre, Julien; Falchieri, Davide; Fantoni, Alessandra; Fasel, Markus; Fehlker, Dominik; Feldkamp, Linus; Felea, Daniel; Feliciello, Alessandro; Feofilov, Grigory; Fernandez Tellez, Arturo; Gonzalez Ferreiro, Elena; Ferretti, Alessandro; Festanti, Andrea; Figiel, Jan; Araujo Silva Figueredo, Marcel; Filchagin, Sergey; Finogeev, Dmitry; Fionda, Fiorella; Fiore, Enrichetta Maria; Floratos, Emmanouil; Floris, Michele; Foertsch, Siegfried Valentin; Foka, Panagiota; Fokin, Sergey; Fragiacomo, Enrico; Francescon, Andrea; Frankenfeld, Ulrich Michael; Fuchs, Ulrich; Furget, Christophe; Fusco Girard, Mario; Gaardhoeje, Jens Joergen; Gagliardi, Martino; Gago Medina, Alberto Martin; Gallio, Mauro; Gangadharan, Dhevan Raja; Ganoti, Paraskevi; Garabatos Cuadrado, Jose; Garcia-Solis, Edmundo Javier; Gargiulo, Corrado; Garishvili, Irakli; Gerhard, Jochen; Germain, Marie; Gheata, Andrei George; Gheata, Mihaela; Ghidini, Bruno; Ghosh, Premomoy; Gianotti, Paola; Giubellino, Paolo; Gladysz-Dziadus, Ewa; Glassel, Peter; Gorlich, Lidia Maria; Gomez Jimenez, Ramon; Gonzalez Zamora, Pedro; Gorbunov, Sergey; Gotovac, Sven; Graczykowski, Lukasz Kamil; Grajcarek, Robert; Grelli, Alessandro; Grigoras, Costin; Grigoras, Alina Gabriela; Grigoryev, Vladislav; Grigoryan, Ara; Grigoryan, Smbat; Grynyov, Borys; Grion, Nevio; Grosse-Oetringhaus, Jan Fiete; Grossiord, Jean-Yves; Grosso, Raffaele; Guber, Fedor; Guernane, Rachid; Guerzoni, Barbara; Guilbaud, Maxime Rene Joseph; Gulbrandsen, Kristjan Herlache; Gulkanyan, Hrant; Gunji, Taku; Gupta, Anik; Gupta, Ramni; Khan, Kamal; Haake, Rudiger; Haaland, Oystein Senneset; Hadjidakis, Cynthia Marie; Haiduc, Maria; Hamagaki, Hideki; Hamar, Gergoe; Hanratty, Luke David; Hansen, Alexander; Harris, John William; Harton, Austin Vincent; Hatzifotiadou, Despina; Hayashi, Shinichi; Hayrapetyan, Arsen; Heckel, Stefan Thomas; Heide, Markus Ansgar; Helstrup, Haavard; Herghelegiu, Andrei Ionut; Herrera Corral, Gerardo Antonio; Herrmann, Norbert; Hess, Benjamin Andreas; Hetland, Kristin Fanebust; Hicks, Bernard Richard; Hippolyte, Boris; Hori, Yasuto; Hristov, Peter Zahariev; Hrivnacova, Ivana; Huang, Meidana; Humanic, Thomas; Hutter, Dirk; Hwang, Dae Sung; Ichou, Raphaelle; Ilkaev, Radiy; Ilkiv, Iryna; Inaba, Motoi; Incani, Elisa; Innocenti, Gian Michele; Ionita, Costin; Ippolitov, Mikhail; Irfan, Muhammad; Ivan, Cristian George; Ivanov, Marian; Ivanov, Vladimir; Ivanytskyi, Oleksii; Jacholkowski, Adam Wlodzimierz; Jahnke, Cristiane; Jang, Haeng Jin; Janik, Malgorzata Anna; Pahula Hewage, Sandun; Jena, Satyajit; Jimenez Bustamante, Raul Tonatiuh; Jones, Peter Graham; Jung, Hyungtaik; Jusko, Anton; Kalcher, Sebastian; Kalinak, Peter; Kalliokoski, Tuomo Esa Aukusti; Kalweit, Alexander Philipp; Kang, Ju Hwan; Kaplin, Vladimir; Kar, Somnath; Karasu Uysal, Ayben; Karavichev, Oleg; Karavicheva, Tatiana; Karpechev, Evgeny; Kazantsev, Andrey; Kebschull, Udo Wolfgang; Keidel, Ralf; Ketzer, Bernhard Franz; Khan, Shuaib Ahmad; Khan, Palash; Khan, Mohammed Mohisin; Khanzadeev, Alexei; Kharlov, Yury; Kileng, Bjarte; Kim, Mimae; Kim, Jinsook; Kim, Se Yong; Kim, Do Won; Kim, Taesoo; Kim, Do Won; Kim, Dong Jo; Kim, Minwoo; Kim, Beomkyu; Kirsch, Stefan; Kisel, Ivan; Kiselev, Sergey; Kisiel, Adam Ryszard; Kiss, Gabor; Klay, Jennifer Lynn; Klein, Jochen; Klein-Boesing, Christian; Kluge, Alexander; Knichel, Michael Linus; Knospe, Anders Garritt; Kohler, Markus Konrad; Kollegger, Thorsten; Kolozhvari, Anatoly; Kondratyev, Valery; Kondratyeva, Natalia; Konevskikh, Artem; Kovalenko, Vladimir; Kowalski, Marek; Kox, Serge; Koyithatta Meethaleveedu, Greeshma; Kral, Jiri; Kralik, Ivan; Kramer, Frederick; Kravcakova, Adela; Krelina, Michal; Kretz, Matthias; Krivda, Marian; Krizek, Filip; Krus, Miroslav; Kryshen, Evgeny; Krzewicki, Mikolaj; Kucera, Vit; Kucheryaev, Yury; Kugathasan, Thanushan; Kuhn, Christian Claude; Kuijer, Paulus Gerardus; Kulakov, Igor; Kumar, Jitendra; Kurashvili, Podist; Kurepin, Alexander; Kurepin, Alexey; Kuryakin, Alexey; Kushpil, Svetlana; Kushpil, Vasilij; Kweon, Min Jung; Kwon, Youngil; Ladron De Guevara, Pedro; Lagana Fernandes, Caio; Lakomov, Igor; Langoy, Rune; Lara Martinez, Camilo Ernesto; Lardeux, Antoine Xavier; La Pointe, Sarah Louise; La Rocca, Paola; Lea, Ramona; Lechman, Mateusz Arkadiusz; Lee, Sung Chul; Lee, Graham Richard; Legrand, Iosif; Lehnert, Joerg Walter; Lemmon, Roy Crawford; Lenhardt, Matthieu Laurent; Lenti, Vito; Leon Monzon, Ildefonso; Levai, Peter; Li, Shuang; Lien, Jorgen Andre; Lietava, Roman; Lindal, Svein; Lindenstruth, Volker; Lippmann, Christian; Lisa, Michael Annan; Ljunggren, Hans Martin; Lodato, Davide Francesco; Lonne, Per-Ivar; Loggins, Vera Renee; Loginov, Vitaly; Lohner, Daniel; Loizides, Constantinos; Loo, Kai Krister; Lopez, Xavier Bernard; Lopez Torres, Ernesto; Lovhoiden, Gunnar; Lu, Xianguo; Luettig, Philipp Johannes; Lunardon, Marcello; Luo, Jiebin; Luparello, Grazia; Luzzi, Cinzia; Jacobs, Peter Martin; Ma, Rongrong; Maevskaya, Alla; Mager, Magnus; Mahapatra, Durga Prasad; Maire, Antonin; Malaev, Mikhail; Maldonado Cervantes, Ivonne Alicia; Malinina, Liudmila; Mal'Kevich, Dmitry; Malzacher, Peter; Mamonov, Alexander; Manceau, Loic Henri Antoine; Manko, Vladislav; Manso, Franck; Manzari, Vito; Marchisone, Massimiliano; Mares, Jiri; Margagliotti, Giacomo Vito; Margotti, Anselmo; Marin, Ana Maria; Markert, Christina; Marquard, Marco; Martashvili, Irakli; Martin, Nicole Alice; Martinengo, Paolo; Martinez Hernandez, Mario Ivan; Martinez-Garcia, Gines; Martin Blanco, Javier; Martynov, Yevgen; Mas, Alexis Jean-Michel; Masciocchi, Silvia; Masera, Massimo; Masoni, Alberto; Massacrier, Laure Marie; Mastroserio, Annalisa; Matyja, Adam Tomasz; Mayer, Christoph; Mazer, Joel Anthony; Mazumder, Rakesh; Mazzoni, Alessandra Maria; Meddi, Franco; Menchaca-Rocha, Arturo Alejandro; Mercado-Perez, Jorge; Meres, Michal; Miake, Yasuo; Mikhaylov, Konstantin; Milano, Leonardo; Milosevic, Jovan; Mischke, Andre; Mishra, Aditya Nath; Miskowiec, Dariusz Czeslaw; Mitu, Ciprian Mihai; Mlynarz, Jocelyn; Mohanty, Bedangadas; Molnar, Levente; Montano Zetina, Luis Manuel; Monteno, Marco; Montes Prado, Esther; Moon, Taebong; Morando, Maurizio; Moreira De Godoy, Denise Aparecida; Moretto, Sandra; Morreale, Astrid; Morsch, Andreas; Muccifora, Valeria; Mudnic, Eugen; Muhuri, Sanjib; Mukherjee, Maitreyee; Muller, Hans; Gameiro Munhoz, Marcelo; Murray, Sean; Musa, Luciano; Nandi, Basanta Kumar; Nania, Rosario; Nappi, Eugenio; Nattrass, Christine; Nayak, Tapan Kumar; Nazarenko, Sergey; Nedosekin, Alexander; Nicassio, Maria; Niculescu, Mihai; Nielsen, Borge Svane; Nikolaev, Sergey; Nikulin, Sergey; Nikulin, Vladimir; Nilsen, Bjorn Steven; Nilsson, Mads Stormo; Noferini, Francesco; Nomokonov, Petr; Nooren, Gerardus; Nyanin, Alexander; Nyatha, Anitha; Nystrand, Joakim Ingemar; Oeschler, Helmut Oskar; Oh, Sun Kun; Oh, Saehanseul; Olah, Laszlo; Oleniacz, Janusz; Oliveira Da Silva, Antonio Carlos; Onderwaater, Jacobus; Oppedisano, Chiara; Ortiz Velasquez, Antonio; Oskarsson, Anders Nils Erik; Otwinowski, Jacek Tomasz; Oyama, Ken; Pachmayer, Yvonne Chiara; Pachr, Milos; Pagano, Paola; Paic, Guy; Painke, Florian; Pajares Vales, Carlos; Pal, Susanta Kumar; Palaha, Arvinder Singh; Palmeri, Armando; Papikyan, Vardanush; Pappalardo, Giuseppe; Park, Woojin; Passfeld, Annika; Patalakha, Dmitry; Paticchio, Vincenzo; Paul, Biswarup; Pawlak, Tomasz Jan; Peitzmann, Thomas; Pereira Da Costa, Hugo Denis Antonio; Pereira De Oliveira Filho, Elienos; Peresunko, Dmitry Yurevich; Perez Lara, Carlos Eugenio; Perrino, Davide; Peryt, Wiktor Stanislaw; Pesci, Alessandro; Pestov, Yury; Petracek, Vojtech; Petran, Michal; Petris, Mariana; Petrov, Plamen Rumenov; Petrovici, Mihai; Petta, Catia; Piano, Stefano; Pikna, Miroslav; Pillot, Philippe; Pinazza, Ombretta; Pinsky, Lawrence; Pitz, Nora; Piyarathna, Danthasinghe; Planinic, Mirko; Ploskon, Mateusz Andrzej; Pluta, Jan Marian; Pochybova, Sona; Podesta Lerma, Pedro Luis Manuel; Poghosyan, Martin; Pohjoisaho, Esko Heikki Oskari; Polishchuk, Boris; Poljak, Nikola; Pop, Amalia; Porteboeuf, Sarah Julie; Pospisil, Vladimir; Potukuchi, Baba; Prasad, Sidharth Kumar; Preghenella, Roberto; Prino, Francesco; Pruneau, Claude Andre; Pshenichnov, Igor; Puddu, Giovanna; Punin, Valery; Putschke, Jorn Henning; Qvigstad, Henrik; Rachevski, Alexandre; Rademakers, Alphonse; Rak, Jan; Rakotozafindrabe, Andry Malala; Ramello, Luciano; Raniwala, Sudhir; Raniwala, Rashmi; Rasanen, Sami Sakari; Rascanu, Bogdan Theodor; Rathee, Deepika; Rauch, Wolfgang Hans; Rauf, Aamer Wali; Razazi, Vahedeh; Read, Kenneth Francis; Real, Jean-Sebastien; Redlich, Krzysztof; Reed, Rosi Jan; Rehman, Attiq Ur; Reichelt, Patrick Simon; Reicher, Martijn; Reidt, Felix; Renfordt, Rainer Arno Ernst; Reolon, Anna Rita; Reshetin, Andrey; Rettig, Felix Vincenz; Revol, Jean-Pierre; Reygers, Klaus Johannes; Riccati, Lodovico; Ricci, Renato Angelo; Richert, Tuva Ora Herenui; Richter, Matthias Rudolph; Riedler, Petra; Riegler, Werner; Riggi, Francesco; Rivetti, Angelo; Rodriguez Cahuantzi, Mario; Rodriguez Manso, Alis; Roeed, Ketil; Rogochaya, Elena; Sharma, Rohni; Rohr, David Michael; Roehrich, Dieter; Romita, Rosa; Ronchetti, Federico; Rosnet, Philippe; Rossegger, Stefan; Rossi, Andrea; Roy, Pradip Kumar; Roy, Christelle Sophie; Rubio Montero, Antonio Juan; Rui, Rinaldo; Russo, Riccardo; Ryabinkin, Evgeny; Rybicki, Andrzej; Sadovskiy, Sergey; Safarik, Karel; Sahoo, Raghunath; Sahu, Pradip Kumar; Saini, Jogender; Sakaguchi, Hiroaki; Sakai, Shingo; Sakata, Dosatsu; Salgado Lopez, Carlos Alberto; Salzwedel, Jai Samuel Nielsen; Sambyal, Sanjeev Singh; Samsonov, Vladimir; Sanchez Castro, Xitzel; Sandor, Ladislav; Sandoval, Andres; Sano, Masato; Santagati, Gianluca; Santoro, Romualdo; Sarkar, Debojit; Scapparone, Eugenio; Scarlassara, Fernando; Scharenberg, Rolf Paul; Schiaua, Claudiu Cornel; Schicker, Rainer Martin; Schmidt, Christian Joachim; Schmidt, Hans Rudolf; Schuchmann, Simone; Schukraft, Jurgen; Schulc, Martin; Schuster, Tim Robin; Schutz, Yves Roland; Schwarz, Kilian Eberhard; Schweda, Kai Oliver; Scioli, Gilda; Scomparin, Enrico; Scott, Rebecca Michelle; Scott, Patrick Aaron; Segato, Gianfranco; Selyuzhenkov, Ilya; Seo, Jeewon; Serci, Sergio; Serradilla Rodriguez, Eulogio; Sevcenco, Adrian; Shabetai, Alexandre; Shabratova, Galina; Shahoyan, Ruben; Sharma, Satish; Sharma, Natasha; Shigaki, Kenta; Shtejer Diaz, Katherin; Sibiryak, Yury; Siddhanta, Sabyasachi; Siemiarczuk, Teodor; Silvermyr, David Olle Rickard; Silvestre, Catherine Micaela; Simatovic, Goran; Singaraju, Rama Narayana; Singh, Ranbir; Singha, Subhash; Singhal, Vikas; Sinha, Bikash; Sarkar - Sinha, Tinku; Sitar, Branislav; Sitta, Mario; Skaali, Bernhard; Skjerdal, Kyrre; Smakal, Radek; Smirnov, Nikolai; Snellings, Raimond; Soegaard, Carsten; Soltz, Ron Ariel; Song, Myunggeun; Song, Jihye; Soos, Csaba; Soramel, Francesca; Spacek, Michal; Sputowska, Iwona Anna; Spyropoulou-Stassinaki, Martha; Srivastava, Brijesh Kumar; Stachel, Johanna; Stan, Ionel; Stefanek, Grzegorz; Steinpreis, Matthew Donald; Stenlund, Evert Anders; Steyn, Gideon Francois; Stiller, Johannes Hendrik; Stocco, Diego; Stolpovskiy, Mikhail; Strmen, Peter; Alarcon Do Passo Suaide, Alexandre; Subieta Vasquez, Martin Alfonso; Sugitate, Toru; Suire, Christophe Pierre; Suleymanov, Mais Kazim Oglu; Sultanov, Rishat; Sumbera, Michal; Susa, Tatjana; Symons, Timothy; Szanto De Toledo, Alejandro; Szarka, Imrich; Szczepankiewicz, Adam; Szymanski, Maciej Pawel; Takahashi, Jun; Tangaro, Marco-Antonio; Tapia Takaki, Daniel Jesus; Tarantola Peloni, Attilio; Tarazona Martinez, Alfonso; Tauro, Arturo; Tejeda Munoz, Guillermo; Telesca, Adriana; Terrevoli, Cristina; Ter-Minasyan, Astkhik; Thaeder, Jochen Mathias; Thomas, Deepa; Tieulent, Raphael Noel; Timmins, Anthony Robert; Toia, Alberica; Torii, Hisayuki; Trubnikov, Victor; Trzaska, Wladyslaw Henryk; Tsuji, Tomoya; Tumkin, Alexandr; Turrisi, Rosario; Tveter, Trine Spedstad; Ulery, Jason Glyndwr; Ullaland, Kjetil; Ulrich, Jochen; Uras, Antonio; Urciuoli, Guido Maria; Usai, Gianluca; Vajzer, Michal; Vala, Martin; Valencia Palomo, Lizardo; Vande Vyvre, Pierre; Vannucci, Luigi; Van Hoorne, Jacobus Willem; Van Leeuwen, Marco; Diozcora Vargas Trevino, Aurora; Varma, Raghava; Vasileiou, Maria; Vasiliev, Andrey; Vechernin, Vladimir; Veldhoen, Misha; Venaruzzo, Massimo; Vercellin, Ermanno; Vergara Limon, Sergio; Vernet, Renaud; Verweij, Marta; Vickovic, Linda; Viesti, Giuseppe; Viinikainen, Jussi Samuli; Vilakazi, Zabulon; Villalobos Baillie, Orlando; Vinogradov, Alexander; Vinogradov, Leonid; Vinogradov, Yury; Virgili, Tiziano; Viyogi, Yogendra; Vodopyanov, Alexander; Volkl, Martin Andreas; Voloshin, Sergey; Voloshin, Kirill; Volpe, Giacomo; Von Haller, Barthelemy; Vorobyev, Ivan; Vranic, Danilo; Vrlakova, Janka; Vulpescu, Bogdan; Vyushin, Alexey; Wagner, Boris; Wagner, Vladimir; Wagner, Jan; Wang, Yifei; Wang, Yaping; Wang, Mengliang; Watanabe, Daisuke; Watanabe, Kengo; Weber, Michael; Wessels, Johannes Peter; Westerhoff, Uwe; Wiechula, Jens; Wikne, Jon; Wilde, Martin Rudolf; Wilk, Grzegorz Andrzej; Williams, Crispin; Windelband, Bernd Stefan; Winn, Michael Andreas; Xiang, Changzhou; Yaldo, Chris G; Yamaguchi, Yorito; Yang, Hongyan; Yang, Ping; Yang, Shiming; Yano, Satoshi; Yasnopolskiy, Stanislav; Yi, Jungyu; Yin, Zhongbao; Yoo, In-Kwon; Yuan, Xianbao; Yushmanov, Igor; Zaccolo, Valentina; Zach, Cenek; Zampolli, Chiara; Zaporozhets, Sergey; Zarochentsev, Andrey; Zavada, Petr; Zavyalov, Nikolay; Zbroszczyk, Hanna Paulina; Zelnicek, Pierre; Zgura, Sorin Ion; Zhalov, Mikhail; Zhang, Fan; Zhang, Yonghong; Zhang, Haitao; Zhang, Xiaoming; Zhou, Daicui; Zhou, You; Zhou, Fengchu; Zhu, Xiangrong; Zhu, Jianlin; Zhu, Jianhui; Zhu, Hongsheng; Zichichi, Antonino; Zimmermann, Markus Bernhard; Zimmermann, Alice; Zinovjev, Gennady; Zoccarato, Yannick Denis; Zynovyev, Mykhaylo; Zyzak, Maksym

    2013-01-01

    The average transverse momentum versus the charged-particle multiplicity $N_{ch}$ was measured in p-Pb collisions at a collision energy per nucleon-nucleon pair $\\sqrt{s_{NN}}$ = 5.02 TeV and in pp collisions at collision energies of $\\sqrt{s}$ = 0.9, 2.76, and 7 Tev in the kinematic range 0.15 with $N_{ch}$ is observed, which is much stronger than that measured in Pb-Pb collisions. For pp collisions, this could be attributed, within a model of hadronizing strings, to multiple-parton interactions and to a final-state color reconnection mechanism. The data in p-Pb and Pb-Pb collisions cannot be described by an incoherent superposition of nucleon-nucleon collisions and pose a challenge to most of the event generators.

  3. QCD with jets and heavy flavour in pp and PbPb collisions in ATLAS

    International Nuclear Information System (INIS)

    Keyes, Robert

    2016-01-01

    ATLAS has studied different aspects of QCD in pp and PbPb collisions. A summary of interesting recent results at centre-of-mass energies of 7 TeV, 8 TeV and 13 TeV (pp), and 2.76 TeV (PbPb) per nucleon pair is presented. Using pp collisions, measurements of Z, W, photon, quarkonia and open charm production differential cross sections in a variety of variables are presented. Jet and heavy flavour muon measurements in PbPb collisions, aimed to test the properties of the Quark Gluon Plasma, with the view of better understanding of jet quenching, are also presented.

  4. QCD with Jets and Heavy Flavour in pp and PbPb Collisions in ATLAS

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00377077; The ATLAS collaboration

    2016-01-01

    ATLAS has studied different aspects of QCD in pp and PbPb collisions. A summary of interesting recent results at centre-of-mass energies of 7 TeV, 8 TeV and 13 TeV (pp), and 2.76 TeV (PbPb) per nucleon pair is presented. Measurements using pp collisions of Z, W, photon, quarkonia and open charm production differential cross sections in a variety of variables are presented. Jet and heavy flavour muon measurements in PbPb collisions, aimed to test the properties of the Quark Gluon Plasma with the view of better understanding of jet quenching, are also presented.

  5. Results on ultra-peripheral interactions in Pb-Pb and p-Pb collisions in ALICE

    CERN Document Server

    Scapparone, E

    2013-01-01

    Ultra-relativistic heavy ions generate strong electromagnetic fields which offer the possibility to study $\\gamma$-nucleus and $\\gamma$-proton interactions at the LHC in the so called ultra-peripheral collisions (UPC). Here we report ALICE results on J/psi photoproduction measured in Pb-Pb collisions at $\\sqrt{s_{\\rm NN}}$ = 2.76 TeV and in p-Pb collisions at $\\sqrt{s_{\\rm NN}}$ = 5.02 TeV.

  6. Searches for transverse momentum dependent flow vector fluctuations in Pb-Pb and p-Pb collisions at the LHC

    NARCIS (Netherlands)

    Acharya, S.; Adamová, D.; Adolfsson, J.; Aggarwal, M. M.; Aglieri Rinella, G.; Agnello, M.; Agrawal, N.; Ahammed, Z.; Ahmad, N.; Ahn, S. U.; Aiola, S.; Akindinov, A.; Alam, S. N.; Alba, J. L. B.; Albuquerque, D. S. D.; Aleksandrov, D.; Alessandro, B.; Alfaro Molina, R.; Alici, A.; Alkin, A.; Alme, J.; Alt, T.; Altenkamper, L.; Altsybeev, I.; Alves Garcia Prado, C.; Andrei, C.; Andreou, D.; Andrews, H. A.; Andronic, A.; Anguelov, V.; Anson, C. D.; Antičić, T.; Antinori, F.; Antonioli, P.; Anwar, R.; Aphecetche, L.; Appelshäuser, H.; Arcelli, S.; Arnaldi, R.; Arnold, O. W.; Arsene, I. C.; Arslandok, M.; Audurier, B.; Augustinus, A.; Averbeck, R.; Azmi, M. D.; Badalà, A.; Baek, Y. W.; Bagnasco, S.; Bailhache, R.; Bala, R.; Baldisseri, A.; Ball, M.C.; Baral, R. C.; Barbano, A. M.; Barbera, R.; Barile, F.; Barioglio, L.; Barnaföldi, G. G.; Barnby, L. S.; Barret, V.; Bartalini, P.; Barth, K.; Bartsch, E.; Basile, M.; Bastid, N.; Basu, S.; Bathen, B.; Batigne, G.; Batyunya, B.; Batzing, P. C.; Bearden, I. G.; Beck, H.; Bedda, C.; Behera, N. K.; Belikov, I.; Bellini, F.; Bello Martinez, H.; Bellwied, R.; Beltran, L. G. E.; Belyaev, V.; Bencedi, G.; Beole, S.; Bercuci, A.; Berdnikov, Y.; Berenyi, D.; Bertens, R. A.; Berzano, D.; Betev, L.; Bhasin, A.; Bhat, I. R.; Bhati, A. K.; Bhattacharjee, B.; Bhom, J.; Bianchi, L.; Bianchi, N.; Bianchin, C.; Bielčík, J.; Bielčíková, J.; Bilandzic, A.; Biro, G.; Biswas, R.; Biswas, S.; Blair, J. T.; Blau, D.; Blume, C.; Boca, G.; Bock, F.; Bogdanov, A.; Boldizsár, L.; Bombara, M.; Bonomi, G.; Bonora, M.; Book, J.; Borel, H.; Borissov, A.; Borri, M.; Botta, E.; Bourjau, C.; Bratrud, L.; Braun-Munzinger, P.; Bregant, M.; Broker, T. A.; Broz, M.; Brucken, E. J.; Bruna, E.; Bruno, G. E.; Budnikov, D.; Buesching, H.; Bufalino, S.; Buhler, P.; Buncic, P.; Busch, O.; Buthelezi, Z.; Butt, J. B.; Buxton, J. T.; Cabala, J.; Caffarri, D.; Caines, H.; Caliva, A.; Calvo Villar, E.; Camerini, P.; Capon, A. A.; Carena, F.; Carena, W.; Carnesecchi, F.; Castillo Castellanos, J.; Castro, A. J.; Casula, E. A R; Ceballos Sanchez, C.; Cerello, P.; Chandra, S.; Chang, B.; Chapeland, S.; Chartier, M.; Charvet, J. L.; Chattopadhyay, S.; Chattopadhyay, S.; Chauvin, A.; Cherney, M.; Cheshkov, C.; Cheynis, B.; Chibante Barroso, V.; Chinellato, D. D.; Cho, Sukhee; Chochula, P.; Choi, K.; Chojnacki, M.; Choudhury, S.; Chowdhury, T.; Christakoglou, P.; Christensen, C. H.; Christiansen, P.; Chujo, T.; Chung, S. U.; Cicalo, C.; Cifarelli, L.; Cindolo, F.; Cleymans, J.; Colamaria, F.; Colella, D.; Collu, A.; Colocci, M.; Concas, M.; Conesa Balbastre, G.; Conesa del Valle, Z.; Connors, M. E.; Contreras, J. G.; Cormier, T. M.; Corrales Morales, Y.; Cortés Maldonado, I.; Cortese, P.; Cosentino, M. R.; Costa, F.; Costanza, S.; Crkovská, J.; Crochet, P.; Cuautle, E.; Cunqueiro, L.; Dahms, T.; Dainese, A.; Danisch, M. C.; Danu, A.; Das, D.; Das, I.; Das, S.; Dash, A.; Dash, S.; Dasgupta, S. S.; De Caro, A.; De Cataldo, G.; De Conti, C.; De Cuveland, J.; De Falco, A.; De Gruttola, D.; De Marco, N.; De Pasquale, S.; De Souza, R. Derradi; Degenhardt, H. F.; Deisting, A.; Deloff, A.; Deplano, C.; Dhankher, P.; Di Bari, D.; Di Mauro, A.; Di Nezza, P.; Di Ruzza, B.; Diaz Corchero, M. A.; Dietel, T.; Dillenseger, P.; Divià, R.; Djuvsland, O.; Dobrin, A.; Domenicis Gimenez, D.; Dönigus, B.; Dordic, O.; Doremalen, L. V. V.; Drozhzhova, T.; Dubey, A. K.; Dubla, A.; Ducroux, L.; Duggal, A. K.; Dupieux, P.; Ehlers, R. J.; Elia, D.; Endress, E.; Engel, H.; Epple, E.; Erazmus, B.; Erhardt, F.; Espagnon, B.; Esumi, S.; Eulisse, G.; Eum, J.; Evans, D.; Evdokimov, S.; Fabbietti, L.; Faivre, J.; Fantoni, A.; Fasel, M.; Feldkamp, L.; Feliciello, A.; Feofilov, G.; Ferencei, J.; Fernández Téllez, A.; Ferreiro, E. G.; Ferretti, A.; Festanti, A.; Feuillard, V. J. G.; Figiel, J.; Figueredo, M. A S; Filchagin, S.; Finogeev, D.; Fionda, F. M.; Fiore, E. M.; Floris, M.; Foertsch, S.; Foka, P.; Fokin, S.; Fragiacomo, E.; Francescon, A.; De Francisco, A.; Frankenfeld, U.; Fronze, G. G.; Fuchs, U.; Furget, C.; Furs, A.; Fusco Girard, M.; Gaardhøje, J. J.; Gagliardi, M.; Gago, A. M.; Gajdosova, K.; Gallio, M.; Galvan, C. D.; Ganoti, P.; Gao, C.; Garabatos, C.; Garcia-Solis, E.; Garg, K.; Garg, P.; Gargiulo, C.; Gasik, P.; Gauger, E. F.; Gay Ducati, M. B.; Germain, M.; Ghosh, J.; Ghosh, P.; Ghosh, S. K.; Gianotti, P.; Giubellino, P.; Giubilato, P.; Gladysz-Dziadus, E.; Glässel, P.; Goméz Coral, D. M.; Gomez Ramirez, A.; Gonzalez, A. S.; Gonzalez, V; González-Zamora, P.; Gorbunov, S.; Görlich, L.; Gotovac, S.; Grabski, V.; Graczykowski, L. K.; Graham, K. L.; Greiner, L. C.; Grelli, A.; Grigoras, C.; Grigoriev, V.; Grigoryan, A.; Grigoryan, S.; Grion, N.; Gronefeld, J. M.; Grosa, F.; Grosse-Oetringhaus, J. F.; Grosso, R.; Gruber, L.; Guber, F.; Guernane, R.; Guerzoni, B.; Gulbrandsen, K.; Gunji, T.; Gupta, A.; Gupta, R.; Guzman, I. B.; Haake, R.; Hadjidakis, C.; Hamagaki, H.; Hamar, G.; Hamon, J. C.; Haque, M. R.; Harris, J. W.; Harton, A.; Hassan, H.; Hatzifotiadou, D.; Hayashi, S.; Heckel, S. T.; Hellbär, E.; Helstrup, H.; Herghelegiu, A.; Herrera Corral, G.; Herrmann, F.; Hess, B. A.; Hetland, K. F.; Hillemanns, H.; Hills, C.; Hippolyte, B.; Hladky, J.; Hohlweger, B.; Horak, D.; Sorkine-Hornung, Olga; Hosokawa, R.; Hristov, P.; Hughes, C.W.; Humanic, T. J.; Hussain, N.; Hussain, T.; Hutter, D.; Hwang, D. S.; Iga Buitron, S. A.; Ilkaev, R.; Inaba, M.; Ippolitov, M.; Irfan, M.; Isakov, V.; Ivanov, M.; Ivanov, V.; Izucheev, V.; Jacak, B.; Jacazio, N.; Jacobs, P. M.; Jadhav, M. B.; Jadlovska, S.; Jadlovsky, J.; Jaelani, S.; Jahnke, C.; Jakubowska, M. J.; Janik, M. A.; Jayarathna, P. H S Y; Jena, C.; Jena, S.; Jercic, M.; Jimenez Bustamante, R. T.; Jones, P. G.; Jusko, A.; Kalinak, P.; Kalweit, A.; Kang, J. H.; Kaplin, V.; Kar, S.; Karasu Uysal, A.; Karavichev, O.; Karavicheva, T.; Karayan, L.; Karczmarczyk, P.; Karpechev, E.; Kebschull, U.; Keidel, R.; Keijdener, D. L.D.; Keil, M.; Ketzer, B.; Khabanova, Z.; Khan, P.M.; Khan, Shfaqat A.; Khanzadeev, A.; Kharlov, Y.; Khatun, A.; Khuntia, A.; Kielbowicz, M. M.; Kileng, B.; Kim, B.; Kim, D.-S.; Kim, D. W.; Kim, D. J.; Kim, H.; Kim, J. S.; Kim, J.; Kim, M.; Kim, M.; Kim, S.; Kim, T.; Kirsch, S.; Kisel, I.; Kiselev, S.; Kisiel, A.; Kiss, G.; Klay, J. L.; Klein, C; Klein, J.; Klein-Bösing, C.; Klewin, S.; Kluge, A.; Knichel, M. L.; Knospe, A. G.; Kobdaj, C.; Kofarago, M.; Kollegger, T.; Kolojvari, A.; Kondratiev, V.; Kondratyeva, N.; Kondratyuk, E.; Konevskikh, A.; Konyushikhin, M.; Kopcik, M.; Kour, M.; Kouzinopoulos, C.; Kovalenko, O.; Kovalenko, V.; Kowalski, M.L.; Koyithatta Meethaleveedu, G.; Králik, I.; Kravčáková, A.; Krivda, M.; Krizek, F.; Kryshen, E.; Krzewicki, M.; Kubera, A. M.; Kučera, V.; Kuhn, C.; Kuijer, P. G.; Kumar, A.; Kumar, J.; Kumar, L.; Kumar, S.; Kundu, Seema; Kurashvili, P.; Kurepin, A.; Kurepin, A. B.; Kuryakin, A.; Kushpil, S.; Kweon, M. J.; Kwon, Y.; La Pointe, S. L.; La Rocca, P.; Lagana Fernandes, C.; Lai, Y. S.; Lakomov, I.; Langoy, R.; Lapidus, K.; Lara, C.; Lardeux, A.; Lattuca, A.; Laudi, E.; Lavicka, R.; Lazaridis, L.; Lea, R.; Leardini, L.; Lee, S.; Lehas, F.; Strunz-Lehner, Christine; Lehrbach, J.; Lemmon, R. C.; Lenti, V.; Leogrande, E.; León Monzón, I.; Lévai, P.; Li, S.; Li, X.; Lien, J.; Lietava, R.; Lim, B.; Lindal, S.; Lindenstruth, V.; Lindsay, S. W.; Lippmann, C.; Lisa, M. A.; Litichevskyi, V.; Ljunggren, H. M.; Llope, W. J.; Lodato, D. F.; Loenne, P. I.; Loginov, V.; Loizides, C.; Loncar, P.; Lopez, X.; López Torres, E.; Lowe, A.; Luettig, P.; Lunardon, M.; Luparello, G.; Lupi, M.; Lutz, T. H.; Maevskaya, A.; Mager, M.; Mahajan, S.; Mahmood, S. M.; Maire, A.; Majka, R. D.; Malaev, M.; Malinina, L.; Mal’Kevich, D.; Malzacher, P.; Mamonov, A.; Manko, V.; Manso, F.; Manzari, V.; Mao, Y.; Marchisone, M.; Mareš, J.; Margagliotti, G. V.; Margotti, A.; Margutti, J.; Marín, Alicia; Markert, C.; Marquard, M.; Martin, N. A.; Martinengo, P.; Martinez, J. A. L.; Martínez, Isabel M.; Martínez García, G.; Martinez Pedreira, M.; Mas, A.; Masciocchi, S.; Masera, M.; Masoni, A.; Masson, E.; Mastroserio, A.; Mathis, A. M.; Matyja, A.; mayer, C.; Mazer, J.; Mazzilli, M.; Mazzoni, M. A.; Meddi, F.; Melikyan, Y.; Menchaca-Rocha, A.; Meninno, E.; Mercado Pérez, J.; Meres, M.; Mhlanga, S.; Miake, Y.; Mieskolainen, M. M.; Mihaylov, D. L.; Mihaylov, D. L.; Mikhaylov, K.; Milano, L.; Milosevic, J.; Mischke, A.; Mishra, A. N.; Miskowiec, D.; Mitra, J.; Mitu, C. M.; Mohammadi, N.; Mohanty, B.; Khan, M. Mohisin; Montes, E.; Moreira De Godoy, D. A.; Moreno, L. A. P.; Moretto, S.; Morreale, A.; Morsch, A.; Muccifora, V.; Mudnic, E.; Mühlheim, D.; Muhuri, S.; Mukherjee, M.; Mulligan, J. D.; Munhoz, M. G.; Münning, K.; Munzer, R. H.; Murakami, H.; Murray, S.; Musa, L.; Musinsky, J.; Myers, C. J.; Myrcha, J. W.; Naik, B.; Nair, Rajiv; Nandi, B. K.; Nania, R.; Nappi, E.; Narayan, A.; Naru, M. U.; Natal Da Luz, H.; Nattrass, C.; Navarro, S. R.; Nayak, K.; Nayak, R.; Nayak, T. K.; Nazarenko, S.; Nedosekin, A.; Negrao De Oliveira, R. A.; Nellen, L.; Nesbo, S. V.; Ng, F.; Nicassio, M.; Niculescu, M.; Niedziela, J.; Nielsen, B. S.; Nikolaev, S.; Nikulin, S.; Nikulin, V.; Nobuhiro, A.; Noferini, F.; Nomokonov, P.; Nooren, G.; Noris, J. C. C.; Norman, J.; Nyanin, A.; Nystrand, J.; Oeschler, H.; Oh, S.; Ohlson, A.; Okubo, T.; Olah, L.; Oleniacz, J.; Oliveira Da Silva, A. C.; Oliver, M. H.; Onderwaater, J.; Oppedisano, C.; Orava, R.; Oravec, M.; Ortiz Velasquez, A.; Oskarsson, A.; Otwinowski, J.; Oyama, K.; Pachmayer, Y.; Pacik, V.; Pagano, D.; Pagano, P.; Paić, G.; Palni, P.; Pan, J.; Pandey, A. K.; Panebianco, S.; Papikyan, V.; Pappalardo, G. S.; Pareek, P.; Park, J.; Parmar, S.; Passfeld, A.; Pathak, S. P.; Paticchio, V.; Patra, R. N.; Paul, B.; Pei, H.; Peitzmann, T.; Peng, X.; Pereira, L. G.; Pereira Da Costa, H.; Peresunko, D.; Perez Lezama, E.; Peskov, V.; Pestov, Y.; Petráček, V.; Petrov, V.; Petrovici, M.; Petta, C.; Pezzi, R. P.; Piano, S.; Pikna, M.; Pillot, P.; Pimentel, L. O. D. L.; Pinazza, O.; Pinsky, L.; Piyarathna, D. B.; Ploskon, M.; Planinic, M.; Pliquett, F.; Pluta, J.; Pochybova, S.; Podesta-Lerma, P. L M; Poghosyan, M. G.; Polichtchouk, B.; Poljak, N.; Poonsawat, W.; Pop, A.; Poppenborg, H.; Porteboeuf-Houssais, S.; Porter, J.; Pozdniakov, V.; Prasad, S. K.; Preghenella, R.; Prino, F.; Pruneau, C. A.; Pshenichnov, I.; Puccio, M.; Puddu, G.; Pujahari, P.; Punin, V.; Putschke, J.; Rachevski, A.; Raha, S.; Rajput, S.; Rak, J.; Rakotozafindrabe, A.; Ramello, L.; Rami, F.; Rana, D. B.; Raniwala, R.; Raniwala, S.; Räsänen, S.; Rascanu, B. T.; Rathee, D.; Ratza, V.; Ravasenga, I.; Read, K. F.; Redlich, K.; Rehman, A.; Reichelt, P.; Reidt, F.; Ren, X.; Renfordt, R.; Reolon, A. R.; Reshetin, A.; Reygers, K.; Riabov, V.; Ricci, R. A.; Richert, T.; Richter, M.; Riedler, P.; Riegler, W.; Riggi, F.; Ristea, C.; Rodríguez Cahuantzi, M.; Røed, K.; Rogochaya, E.; Rohr, D.; Röhrich, D.; Rokita, P. S.; Ronchetti, F.; Rosas, E. D.; Rosnet, P.; Rossi, A.; Rotondi, A.; Roukoutakis, F.; Roy, A.; Roy, C.; Roy, P.; Rubio Montero, A. J.; Rueda, O. V.; Rui, R.; Rumyantsev, B.; Rustamov, A.; Ryabinkin, E.; Ryabov, Y.; Rybicki, A.; Saarinen, S.; Sadhu, S.; Sadovsky, S.; Šafařík, K.; Saha, S. K.; Sahlmuller, B.; Sahoo, B.; Sahoo, P.; Sahoo, R.; Sahoo, S.; Sahu, P. K.; Saini, J.; Sakai, S.; Saleh, M. A.; Salzwedel, J.; Sambyal, S.; Samsonov, V.; Sandoval, A.; Sarkar, D.; Sarkar, N.; Sarma, P.; Sas, M. H.P.; Scapparone, E.; Scarlassara, F.; Scharenberg, R. P.; Scheid, H. S.; Schiaua, C.; Schicker, R.; Schmidt, C.; Schmidt, H. R.; Schmidt, M. O.; Schmidt, M.; Schuchmann, S.; Schukraft, J.; Schutz, Y.; Schwarz, K.; Schweda, K.; Scioli, G.; Scomparin, E.; Scott, R.; Šefčík, M.; Seger, J. E.; Sekiguchi, Y.; Sekihata, D.; Selyuzhenkov, I.; Senosi, K.; Senyukov, S.; Serradilla, E.; Sett, P.; Sevcenco, A.; Shabanov, A.; Shabetai, A.; Shahoyan, R.; Shaikh, W.; Shangaraev, A.; Sharma, A.; Sharma, A.; Sharma, M.; Sharma, M.; Sharma, N.; Sheikh, A. I.; Shigaki, K.; Shou, Q. Y.; Shtejer, K.; Sibiriak, Y.; Siddhanta, S.; Sielewicz, K. M.; Siemiarczuk, T.; Silvermyr, D.; Silvestre, C.; Simatovic, G.; Simonetti, G.; Singaraju, R.; Singh, R; Singhal, V.; Sinha, T.; Sitar, B.; Sitta, M.; Skaali, T. B.; Slupecki, M.; Smirnov, N.; Snellings, R. J.M.; Snellman, T. W.; Song, J.; Song, M.; Soramel, F.; Sorensen, S.; Sozzi, F.; Spiriti, E.; Sputowska, I.; Srivastava, B. K.; Stachel, J.; Stan, I.; Stankus, P.; Stenlund, E.; Stocco, D.; Strmen, P.; Suaide, A. A P; Sugitate, T.; Suire, C.; Suleymanov, M.; Suljic, M.; Sultanov, R.; Šumbera, M.; Sumowidagdo, S.; Suzuki, K.; Swain, S.; Szabo, A.; Szarka, I.; Tabassam, U.; Takahashi, J.; Tambave, G. J.; Tanaka, N.; Tarhini, M.; Tariq, M.; Tarzila, M. G.; Tauro, A.; Tejeda Muñoz, G.; Telesca, A.; Terasaki, K.; Terrevoli, C.; Teyssier, B.; Thakur, D.; Thakur, J. S.; Thomas, D.; Thoresen, F.; Tieulent, R.; Tikhonov, A.; Timmins, A. R.; Toia, A.; tripathy, S.; Trogolo, S.; Trombetta, G.; Tropp, Linda; Trubnikov, V.; Trzaska, W. H.; Trzeciak, B. A.; Tsuji, T.; Tumkin, A.; Turrisi, R.; Tveter, T. S.; Ullaland, K.; Umaka, E. N.; Uras, A.; Usai, G. L.; Utrobicic, A.; Vala, M.; Van Der Maarel, J.; Van Hoorne, J. W.; van Leeuwen, M.; Vanat, T.; Vande Vyvre, P.; Varga, D.; Vargas, A.; Vargyas, M.; Varma, R.; Vasileiou, M.; Vasiliev, A.; Vauthier, A.; Vázquez Doce, O.; Vechernin, V.; Veen, A. M.; Velure, A.; Vercellin, E.; Vergara Limón, S.; Vernet, R.; Vértesi, R.; Vickovic, L.; Vigolo, S.; Viinikainen, J.; Vilakazi, Z.; Villalobos Baillie, O.; Villatoro Tello, A.; Vinogradov, A.; Vinogradov, L.; Virgili, T.; Vislavicius, V.; Vodopyanov, A.; Völkl, M. A.; Voloshin, K.; Voloshin, S. A.; Volpe, G.; Haller, B.; Vorobyev, I.; Voscek, D.; Vranic, D.; Vrláková, J.; Wagner, B.; Wang, H.; Wang, M.; Watanabe, D.; Watanabe, Y.; Weber, M.; Weber, S. G.; Weiser, D. F.; Wenzel, S. C.; Wessels, J. P.; Westerhoff, U.; Whitehead, A. M.; Wiechula, J.; Wikne, J.; Wilk, G.; Wilkinson, J.; Willems, G. A.; Williams, M. C S; Willsher, E.; Windelband, B.; Witt, W. E.; Yalcin, S.; Yamakawa, K.; Yang, P.; Yano, S.; Yin, Z.; Yokoyama, H.; Yoo, I. K.; Yoon, J. H.; Yurchenko, V.; Zaccolo, V.; Zaman, A.; Zampolli, C.; Zanoli, H. J. C.; Zardoshti, N.; Zarochentsev, A.; Závada, P.; Zaviyalov, N.; Zbroszczyk, H.; Zhalov, M.; Zhang, H.; Zhang, X.; Zhang, Y.; Zhang, C.; Zhang, Z.; Zhao, C.; Zhigareva, N.; Zhou, D.; Zhou, Y.; Zhou, Z.; Zhu, H.; Zhu, J.; Zhu, X.; Zichichi, A.; Zimmermann, A.; Zimmermann, M. B.; Zinovjev, G.; Zmeskal, J.; Zou, Shui

    2017-01-01

    The measurement of azimuthal correlations of charged particles is presented for Pb-Pb collisions at √sNN=2.76 TeV and p-Pb collisions at √sNN=5.02 TeV with the ALICE detector at the CERN Large Hadron Collider. These correlations are measured for the second, third and fourth order flow vector in the

  7. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    Science.gov (United States)

    Kale, R. B.; Sartale, S. D.; Ganesan, V.; Lokhande, C. D.; Lin, Yi-Feng; Lu, Shih-Yuan

    2006-11-01

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH3COO)2 as Pb2+ and Na2SeSO3 as Se2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

  8. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kale, R.B. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China)]. E-mail: rb_kale@yahoo.co.in; Sartale, S.D. [Hahn Meitner Institute, Glienicker Strasse-100, D-14109 Berlin (Germany); Ganesan, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Lin, Y.-F. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China); Lu, S.-Y. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China)]. E-mail: sylu@mx.nthu.edu.tw

    2006-11-15

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH{sub 3}COO){sub 2} as Pb{sup 2+} and Na{sub 2}SeSO{sub 3} as Se{sup 2-} ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

  9. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    International Nuclear Information System (INIS)

    Kale, R.B.; Sartale, S.D.; Ganesan, V.; Lokhande, C.D.; Lin, Y.-F.; Lu, S.-Y.

    2006-01-01

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH 3 COO) 2 as Pb 2+ and Na 2 SeSO 3 as Se 2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV

  10. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  11. EDTA-assisted Pb phytoextraction.

    Science.gov (United States)

    Saifullah; Meers, E; Qadir, M; de Caritat, P; Tack, F M G; Du Laing, G; Zia, M H

    2009-03-01

    Pb is one of the most widespread and metal pollutants in soil. It is generally concentrated in surface layers with only a minor portion of the total metal found in soil solution. Phytoextraction has been proposed as an inexpensive, sustainable, in situ plant-based technology that makes use of natural hyperaccumulators as well as high biomass producing crops to help rehabilitate soils contaminated with heavy metals without destructive effects on soil properties. The success of phytoextraction is determined by the amount of biomass, concentration of heavy metals in plant, and bioavailable fraction of heavy metals in the rooting medium. In general, metal hyperaccumulators are low biomass, slow growing plant species that are highly metal specific. For some metals such as Pb, there are no hyperaccumulator plant species known to date. Although high biomass-yielding non-hyperaccumulator plants lack an inherent ability to accumulate unusual concentrations of Pb, soil application of chelating agents such as EDTA has been proposed to enhance the metal concentration in above-ground harvestable plant parts through enhancing the metal solubility and translocation from roots to shoots. Leaching of metals due to enhanced mobility during EDTA-assisted phytoextraction has been demonstrated as one of the potential hazards associated with this technology. Due to environmental persistence of EDTA in combination with its strong chelating abilities, the scientific community is moving away from the use of EDTA in phytoextraction and is turning to less aggressive alternative strategies such as the use of organic acids or more degradable APCAs (aminopolycarboxylic acids). We have therefore arrived at a point in phytoremediation research history in which we need to distance ourselves from EDTA as a proposed soil amendment within the context of phytoextraction. However, valuable lessons are to be learned from over a decade of EDTA-assisted phytoremediation research when considering the

  12. Compton scattering on 208Pb

    International Nuclear Information System (INIS)

    Alberico, W.M.; Molinari, A.

    1982-01-01

    In this paper we briefly review the formalism of the nuclear Compton scattering in the frame of the low-energy theorems (LET). We treat the resonant terms of the amplitude, having collective intermediate nuclear states, as a superposition of Lorentz lines with energy, width and strength fixed by the photo-absorption experiments. The gauge terms are evaluated starting from a simple, but realistic, nuclear Hamiltonian. Dynamical nucleon-nucleon correlations are consistently taken into account, beyond those imposed by the Pauli principle. The comparison of the theoretical predictions with the data of elastic diffusion of photons from 208 Pb shows that LET are insufficient to account for the experiment. (orig.)

  13. Reconstruction of historical atmospheric Pb using Dutch urban lake sediments: A Pb isotope study

    Energy Technology Data Exchange (ETDEWEB)

    Walraven, N., E-mail: n.walraven@geoconnect.nl [GeoConnect, Meester Dekkerstraat 4, 1901 PV Castricum (Netherlands); Os, B.J.H. van, E-mail: b.vanos@rce.nl [Rijksdienst voor Archeologie, Cultuurlandschap en Monumenten, P.O. Box 1600, 3800 BP Amersfoort (Netherlands); Klaver, G.Th., E-mail: g.klaver@brgm.nl [BRGM, 3 avenue Claude-Guillemin, BP 36009, 45060 Orléans Cedex 2 (France); Middelburg, J.J., E-mail: j.b.m.middelburg@uu.nl [University Utrecht, Faculty of Geosciences, P.O. Box 80021, 3508 TA Utrecht (Netherlands); Davies, G.R., E-mail: g.r.davies@vu.nl [VU University Amsterdam, Faculty of Earth and Life Sciences, Petrology, De Boelelaan 1085, 1081 HV Amsterdam (Netherlands)

    2014-06-01

    Lake sediments provide a record of atmospheric Pb deposition and changes in Pb isotope composition. To our knowledge, such an approach has not previously been performed in The Netherlands or linked to national air monitoring data. Results are presented for Pb content and isotope composition of {sup 137}Cs dated lake sediments from 2 Dutch urban lakes. Between 1942 and 2002 A.D. anthropogenic atmospheric Pb deposition rates in the two lakes varied from 12 ± 2 to 69 ± 16 μg cm{sup −2} year{sup −1}. The rise and fall of leaded gasoline is clearly reflected in the reconstructed atmospheric Pb deposition rates. After the ban on leaded gasoline, late 1970s/early 1980s, atmospheric Pb deposition rates decreased rapidly in the two urban lakes and the relative contributions of other anthropogenic Pb sources — incinerator ash (industrial Pb) and coal/galena — increased sharply. Atmospheric Pb deposition rates inferred from the lake record a clear relationship with nearby measured annual mean air Pb concentrations. Based on this relationship it was estimated that air Pb concentrations between 1942 and 2002 A.D. varied between 5 and 293 ng/m{sup 3}. - Highlights: • Sixty years of atmospheric Pb was reconstructed using urban lake sediments. • Stable Pb isotopes were applied to determine Pb sources in urban lakes. • The rise and fall of leaded gasoline is clearly reflected in the lake sediments. • Other dominant anthropogenic Pb sources are incinerator ash and coal/galena. • The lake Pb record shows a clear relationship with measured air Pb concentrations.

  14. Facile synthesis of CsPbBr3/PbSe composite clusters.

    Science.gov (United States)

    Nguyen, Thang Phan; Ozturk, Abdullah; Park, Jongee; Sohn, Woonbae; Lee, Tae Hyung; Jang, Ho Won; Kim, Soo Young

    2018-01-01

    In this work, CsPbBr 3 and PbSe nanocomposites were synthesized to protect perovskite material from self-enlargement during reaction. UV absorption and photoluminescence (PL) spectra indicate that the addition of Se into CsPbBr 3 quantum dots modified the electronic structure of CsPbBr 3 , increasing the band gap from 2.38 to 2.48 eV as the Cs:Se ratio increased to 1:3. Thus, the emission color of CsPbBr 3 perovskite quantum dots was modified from green to blue by increasing the Se ratio in composites. According to X-ray diffraction patterns, the structure of CsPbBr 3 quantum dots changed from cubic to orthorhombic due to the introduction of PbSe at the surface. Transmission electron microscopy and X-ray photoemission spectroscopy confirmed that the atomic distribution in CsPbBr 3 /PbSe composite clusters is uniform and the composite materials were well formed. The PL intensity of a CsPbBr 3 /PbSe sample with a 1:1 Cs:Se ratio maintained 50% of its initial intensity after keeping the sample for 81 h in air, while the PL intensity of CsPbBr 3 reduced to 20% of its initial intensity. Therefore, it is considered that low amounts of Se could improve the stability of CsPbBr 3 quantum dots.

  15. Proximity effect in ultrathin Pb/Ag multilayers within the Cooper limit

    OpenAIRE

    Bourgeois, O.; Frydman, A.; Dynes, R. C.

    2003-01-01

    We report on transport and tunneling measurements performed on ultra-thin Pb/Ag (strong coupled superconductor/normal metal) multilayers evaporated by quench condensation. The critical temperature and energy gap of the heterostructures oscillate with addition of each layer, demonstrating the validity of the Cooper limit model in the case of multilayers. We observe excellent agreement with a simple theory for samples with layer thickness larger than 30\\AA . Samples with single layers thinner t...

  16. Luminescence of CsPbBr3 films under high-power excitation

    OpenAIRE

    高橋, 一彰; 斎藤, 忠昭; 近藤, 新一; 浅田, 拡志

    2004-01-01

    Highly excited photoluminescence of CsPbBr3 has been measured for thin films prepared by crystallization from the amorphous phase into microcrystalline/ polycrystalline states. With the increase of excitation intensity, there occurs jumping of the dominant emission band from a free-exciton band to a new band originating from exciton-exciton inelastic collision. Stimulated emission is observed for the new band at very low threshold excitation intensities of the order of 10kW/cm2.

  17. Domain switching of fatigued ferroelectric thin films

    Science.gov (United States)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  18. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  19. Collective oblate bands in Pb nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Huebel, H; Baldsefen, G; Mehta, D [Bonn Univ. (Germany). Inst. fuer Strahlen- und Kernphysik; and others

    1992-08-01

    The coexistence of different nuclear shapes is a well established phenomenon in the Hg-Pb region, where spherical, oblate, prolate and superdeformed prolate shapes have been observed. In this work, the authors report on several new rotational bands in the normally spherical nuclei {sup 199-201}Pb. Similar structures were found previously in the lighter isotopes {sup 197,198}Pb. 11 refs., 1 tab., 3 figs.

  20. 210Pb ingestion in Akita City, Japan

    International Nuclear Information System (INIS)

    Hisamatsu, Shunichi; Takizawa, Yukio; Komura, Kazuhisa; Tada, Tetsuo.

    1992-01-01

    Ingestion of 210 Pb in Akita City, northern Japan was studied with food category samples and total diet samples by means of a low energy photon spectrometry. Results for food category samples revealed that the contribution of marine products to total 210 Pb ingestion was the largest. Mean 210 Pb ingestion of the two total diet samples was found to be 0.19 Bq d -1 , and approximately 1/3 of a previous reported value which was cited in an UNSCEAR report as an example of high 210 Pb ingestion by marine foods consumption. (author)

  1. Transverse momentum dependence of charmonium suppression in Pb-Pb collisions at the CERN SPS

    CERN Document Server

    Alessandro, Bruno; Arnaldi, R; Atayan, M; Beolè, S; Boldea, V; Bordalo, P; Borges, G; Castanier, C; Castor, J; Chaurand, B; Cheynis, B; Chiavassa, E; Cicalò, C; Comets, M P; Constantinescu, S; Cormick, M M; Cortese, P; De Falco, A; De Marco, N; Dellacasa, G; Devaux, A; Dita, S; Fargeix, J; Force, P; Gallio, M; Gerschel, C; Giubellino, P; Golubeva, M B; Grigorian, A A; Grigorian, S; Guber, F F; Guichard, A; Gulkanian, H R; Idzik, M; Jouan, D; Karavitcheva, T L; Kluberg, L; Kurepin, A B; Le Bornec, Y; Lourenço, C; Marzari-Chiesa, A; Masera, M; Masoni, A; Monteno, M; Musso, A; Petiau, P; Piccotti, A; Pizzi, J R; Prino, F; Puddu, G; Quintans, C; Ramello, L; Ramos, S; Riccati, L; Santos, H; Saturnini, P; Scomparin, E; Serci, S; Shahoyan, R; Sigaudo, F; Sitta, M; Sonderegger, P; Tarrago, X; Topilskaya, N S; Usai, G L; Vercellin, E; Villatte, L; Willis, N; Wu, T

    2005-01-01

    Charmonium suppression in Pb-Pb collisions at 158 GeV/c per nucleon is investigated in detail with the study of the transverse momentum distributions of J/ psi as a function of the centrality of the collision. It is shown that the observed J/ psi suppression in Pb-Pb interactions is particularly significant mainly at low transverse momentum where it strongly depends on centrality. For peripheral Pb- Pb collisions, the transverse momentum dependence of the J/ psi cross section is, as a function of centrality, qualitatively similar to the dependence observed in p-A and S-U collisions. Comparing peripheral and central Pb-Pb collisions, the data show a relative suppression in the whole p/sub T/ range although its amplitude significantly decreases with increasing p/sub T/ and becomes almost p/sub T/ independent for the highest p/sub T/ values.

  2. Electrodialytic Remediation of Pb Contaminated Soil - Effects of Soil Properties and Pb Distribution

    DEFF Research Database (Denmark)

    Pedersen, Anne Juul; Jensen, Pernille Erland

    1999-01-01

    The aim of this work was to investigate the effects of soil properties and Pb distribution on the electrodialytic remediation of Pb contaminated soil. Two naturally Pb contaminated soils were compared with respect to total Pb content, Pb distribution, pH, carbonate content, clay content and organic...... matter, and an electrodialytic remediation experiment was made on each soil.It was concluded that soil pH was the most important factor limiting the mobilisation of Pb. In one of the remediation experiments it was possible to mobilise and reduce the amount of Pb significantly, whereas in the other only...... a small amount of the initial Pb was mobilised at similar experimental conditions. A high buffering capacity of one of the soils, which was partly due to a high carbonate content, led to a bad remediation result....

  3. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  4. Texture control and seeded nucleation of nanosize structures of ferroelectric thin films

    Science.gov (United States)

    Muralt, Paul

    2006-09-01

    An overview is given on nucleation phenomena of Pb(Zr ,Ti)O3 (PZT) thin films on Pt(111)-based substrates. Emphasis is given on in situ growth methods, particularly in situ reactive sputtering from three metallic targets. Growth of PZT thin films is discussed from the point of view of the PbOx-TiO2 phase diagram, PbO vapor pressure, and classical nucleation theory. The role of thin TiO2 affinity layers and spots is explained in the frame of this theory. Activation energies for desorption and chemisorption are adapted to comply with the fact that nucleation rates on TiO2 are much larger than the ones on bare Pt(111). The model reproduces well the PbO surface flux from bare Pt(111) to the affinity spots in the case of PbTiO3 nucleation and the reversed tendency in the case of PZT 40/60 nucleation, explaining experimental observations. The critical size of nuclei was calculated to contain 8-10unit cells for PbTiO3/Pt nucleation and 14-17 for PZT/Pt nucleation.

  5. NA49 Results on Single Particle and Correlation Measurements in Central PB+PB Collisions

    CERN Document Server

    Wang, Fuqiang; Bachler, J.; Bailey, S.J.; Barna, D.; Barnby, L.S.; Bartke, J.; Barton, R.A.; Bialkowska, H.; Billmeier, A.; Blyth, C.O.; Bock, R.; Boimska, B.; Bormann, C.; Brady, F.P.; Brockmann, R.; Brun, R.; Buncic, P.; Caines, H.L.; Carr, L.D.; Cebra, D.A.; Cooper, G.E.; Cramer, J.G.; Cristinziani, M.; Csato, P.; Dunn, J.; Eckardt, V.; Eckhardt, F.; Ferguson, M.I.; Fischer, H.G.; Flierl, D.; Fodor, Z.; Foka, P.; Freund, P.; Friese, V.; Fuchs, M.; Gabler, F.; Gal, J.; Ganz, R.; Gazdzicki, M.; Gladysz, E.; Grebieszkow, J.; Gunther, J.; Harris, J.W.; Hegyi, S.; Henkel, T.; Hill, L.A.; Hummler, H.; Igo, G.; Irmscher, D.; Jacobs, P.; Jones, P.G.; Kadija, K.; Kolesnikov, V.I.; Kowalski, M.; Lasiuk, B.; Levai, P.; Malakhov, A.I.; Margetis, S.; Markert, C.; Melkumov, G.L.; Mock, A.; Molnar, J.; Nelson, John M.; Oldenburg, M.; Odyniec, G.; Palla, G.; Panagiotou, A.D.; Petridis, A.; Piper, A.; Porter, R.J.; Poskanzer, Arthur M.; Prindle, D.J.; Puhlhofer, F.; Rauch, W.; Reid, J.G.; Renfordt, R.; Retyk, W.; Ritter, H.G.; Rohrich, D.; Roland, C.; Roland, G.; Rudolph, H.; Rybicki, A.; Sandoval, A.; Sann, H.; Semenov, A.Yu.; Schafer, E.; Schmischke, D.; Schmitz, N.; Schonfelder, S.; Seyboth, P.; Seyerlein, J.; Sikler, F.; Skrzypczak, E.; Snellings, R.; Squier, G.T.A.; Stock, R.; Strobele, H.; Struck, C.; Szentpetery, I.; Sziklai, J.; Toy, M.; Trainor, T.A.; Trentalange, S.; Ullrich, T.; Vassiliou, M.; Veres, G.; Vesztergombi, G.; Voloshin, S.; Vranic, D.; Weerasundara, D.D.; Wenig, S.; Whitten, C.; Wienold, T.; Wood, L.; Xu, N.; Yates, T.A.; Zimanyi, J.; Zhu, X.Z.; Zybert, R.; Wang, Fuqiang

    2000-01-01

    Single-particle spectra and two-particle correlation functions measured by the NA49 collaboration in central Pb+Pb collisions at 158 GeV/nucleon are presented. These measurements are used to study the kinetic and chemical freeze-out conditions in heavy ion collisions. We conclude that large baryon stopping, high baryon density and strong transverse radial flow are achieved in central Pb+Pb collisions at the SPS.

  6. Effect of PbI2 deposition rate on two-step PVD/CVD all-vacuum prepared perovskite

    International Nuclear Information System (INIS)

    Ioakeimidis, Apostolos; Christodoulou, Christos; Lux-Steiner, Martha; Fostiropoulos, Konstantinos

    2016-01-01

    In this work we fabricate all-vacuum processed methyl ammonium lead halide perovskite by a sequence of physical vapour deposition of PbI 2 and chemical vapour deposition (CVD) of CH 3 NH 3 I under a static atmosphere. We demonstrate that for higher deposition rate the (001) planes of PbI 2 film show a higher degree of alignment parallel to the sample's surface. From X-ray diffraction data of the resulted perovskite film we derive that the intercalation rate of CH 3 NH 3 I is fostered for PbI 2 films with higher degree of (001) planes alignment. The stoichiometry of the produced perovskite film is also studied by Hard X-ray photoelectron spectroscopy measurements. Complete all-vacuum perovskite solar cells were fabricated on glass/ITO substrates coated by an ultra-thin (5 nm) Zn-phthalocyanine film as hole selective layer. A dependence of residual PbI 2 on the solar cells performance is displayed, while photovoltaic devices with efficiency up to η=11.6% were achieved. - Graphical abstract: A two-step PVD/CVD processed perovskite film with the CVD intercalation rate of CH 3 NCH 3 molecules been fostered by increasing the PVD rate of PbI 2 and prolonging the CVD time. - Highlights: • A simple PVD/CVD process for perovskite film production. • Increased PVD rate yields better alignment of the PbI 2 (001) crystallite planes. • CH 3 NH 3 I intercalation process fostered by increased PbI 2 PVD rate. • Stoichiometric CH 3 NH 3 PbI 3 suitable as absorber in photovoltaic applications • Reduced PbI 2 residue at the bottom of CH 3 NH 3 PbI 3 improves device performance.

  7. Stable and metastable phases in reciprocal systems PbSe + Ag2I2 Ag2Se + PbI2 and PbSe + CdI2 = CdSe + PbI2

    International Nuclear Information System (INIS)

    Odin, I.N.; Grin'ko, V.V.; Kozlovskij, V.F.; Safronov, E.V.

    2005-01-01

    Mutual system PbSe + Ag 2 I 2 = Ag 2 Se + PbI 2 is investigated. It is shown that diagonal Ag 2 Se-PbI 2 is stable. Liquidus surface and isothermal section at 633 K of phase diagram of PbSe-Ag 2 Se-PbI 2 system are built. Transformations directing to crystallization metastable ternary compound forming in PbSe-PbI 2 system and metastable polytype modifications of lead iodide in PbSe-Ag 2 Se-PbI 2 system at 620-685 K are studied. By hardening from molten state (1150-1220 K) new interstitial metastable phases crystallizing in CdCl 2 structural type are obtained in PbSe-Ag 2 Se-PbI 2 and PbSe + CdI 2 = CdSe + PbI 2 systems [ru

  8. Eccentric Protons? Sensitivity of Flow to System Size and Shape in p +p, p +Pb, and Pb +Pb Collisions

    Science.gov (United States)

    Schenke, Björn; Venugopalan, Raju

    2014-09-01

    We determine the transverse system size of the initial nonequilibrium Glasma state and of the hydrodynamically evolving fireball as a function of produced charged particles in p +p, p +Pb, and Pb+Pb collisions at the Large Hadron Collider. Our results show features similar to those of recent measurements of Hanbury Brown-Twiss (HBT) radii by the ALICE Collaboration. Azimuthal anisotropy coefficients vn generated by combining the early time Glasma dynamics with viscous fluid dynamics in Pb +Pb collisions are in excellent agreement with experimental data for a wide range of centralities. In particular, event-by-event distributions of the vn values agree with the experimental data out to fairly peripheral centrality bins. In striking contrast, our results for p +Pb collisions significantly underestimate the magnitude and do not reproduce the centrality dependence of data for v2 and v3 coefficients. We argue that the measured vn data and HBT radii strongly constrain the shapes of initial parton distributions across system sizes that would be compatible with a flow interpretation in p +Pb collisions. Alternately, additional sources of correlations may be required to describe the systematics of long-range rapidity correlations in p +p and p +Pb collisions.

  9. Multi-strange baryon production in pp, p-Pb and Pb-Pb collisions measured with ALICE

    CERN Document Server

    Colella, Domenico

    2014-01-01

    The production of {\\Xi}$^{-}$ and {\\Omega}$^{-}$ baryons and their anti-particles in pp, p-Pb and Pb-Pb collisions has been measured by the ALICE Collaboration. These hyperons are reconstructed via the detection of their charged weak-decay products, which are identified through their measured ionisation losses and momenta in the ALICE Time Projection Chamber. Comparing the production yields in Pb-Pb and pp collisions, a strangeness enhancement has been measured and found to increase with the centrality of the collision and with the strangeness content of the baryon; moreover, in the comparison with similar measurements at lower energies, it decreases as the centre-of-mass energy increases, following the trend already observed moving from SPS to RHIC. Recent measurement of cascade and {\\Omega} in p-Pb interactions are compared with results in Pb-Pb and pp collisions and with predictions from thermal models, based on a grand canonical approach. The nuclear modification factors for the charged {\\Xi} and {\\Omega}...

  10. Reconstruction of historical atmospheric Pb using Dutch urban lake sediments: A Pb isotope study

    NARCIS (Netherlands)

    Walraven, N.; van Os, B.J.H.; Klaver, G.Th.; Middelburg, J.J.; Davies, G.R.

    2014-01-01

    Lake sediments provide a record of atmospheric Pb deposition and changes in Pb isotope composition. To our knowledge, such an approach has not previously been performed in The Netherlands or linked to national air monitoring data. Results are presented for Pb content and isotope composition of 137Cs

  11. Tracing diffuse anthropogenic Pb sources in rural soils by means of Pb isotope analysis

    NARCIS (Netherlands)

    Walraven, N.; Gaans, P.F.M. van; Veer, G. van der; Os, B.J.H. van; Klaver, G.T.; Vriend, S.P.; Middelburg, J.J.; Davies, G.R.

    2013-01-01

    Knowledge of the cause and source of Pb pollution is important to abate environmental Pb pollution by taking source-related actions. Lead isotope analysis is a potentially powerful tool to identify anthropogenic Pb and its sources in the environment. Spatial information on the variation of

  12. Room-temperature synthesis of pure perovskite-related Cs4PbBr6 nanocrystals and their ligand-mediated evolution into highly luminescent CsPbBr3 nanosheets

    Science.gov (United States)

    Yang, Liu; Li, Dongmei; Wang, Cong; Yao, Wei; Wang, Hao; Huang, Kaixiang

    2017-07-01

    Currently, all-inorganic cesium lead-halide perovskite nanocrystals have attracted enormous attentions owing to their excellent optical performances. While great efforts have been devoted to CsPbBr3 nanocrystals, the perovskite-related Cs4PbBr6 nanocrystals, which were newly reported, still remained poorly understood. Here, we reported a novel room-temperature reaction strategy to synthesize pure perovskite-related Cs4PbBr6 nanocrystals. Size of the products could be adjusted through altering the amount of ligands, simply. A mixture of two good solvents with different polarity was innovatively used as precursor solvent, being one key to the high-yield Cs4PbBr6 nanocrystals synthesis. Other two keys were Cs+ precursor concentration and surface ligands. Ingenious experiments were designed to reveal the underlying reaction mechanism. No excitonic emission was observed from the prepared Cs4PbBr6 nanocrystals in our work. We considered the green emission which was observed in other reports originated from the avoidless transformation of Cs4PbBr6 into CsPbBr3 nanocrystals. Indeed, the new-prepared Cs4PbBr6 nanocrystals could transform into CsPbBr3 nanosheets with surface ligands mediated. The new-transformed two-dimensional CsPbBr3 nanosheets could evolve into large-size nanosheets. The influences of surface ligand density on the fluorescent intensity and stability of transformed CsPbBr3 nanosheets were also explained. Notably, the photoluminescence quantum yield of the as-transformed CsPbBr3 nanosheets could reach as high as 61.6% in the form of thin film. The fast large-scale synthesis of Cs4PbBr6 nanocrystals and their ligand-mediated transformation into high-fluorescent CsPbBr3 nanosheets will be beneficial to the future optoelectronic applications. Our work provides new approaches to understand the structural evolution and light-emitting principle of perovskite nanocrystals. [Figure not available: see fulltext.

  13. Electrochemical degradation of linuron in aqueous solution using Pb/PbO2 and C/PbO2 electrodes

    Directory of Open Access Journals (Sweden)

    Nasser Abu Ghalwa

    2016-09-01

    Full Text Available Two modified electrodes (Pb/PbO2 and C/PbO2 were prepared by electrodeposition and used as anodes for electrochemical degradation of linuron (phenylurea pesticide in aqueous solution. Different operating conditions and factors affecting the treatment process including current density, temperature, initial concentration of linuron, pH, conductive electrolyte and time of electrolysis were studied and optimized. The best degradation occurred in the presence of NaCl (1 gL−1 as conductive electrolyte. After 30 min, nearly complete degradation of linuron was achieved (92% and 84% using C/PbO2 and Pb/PO2 electrodes at pH 7 and 1.5, respectively. Higher degradation efficiency was obtained at low temperature (5–10 °C. The optimum current density for the degradation of linuron on both electrodes was (150 mAcm−2.

  14. Organic Photovoltaic Cells Based on PbPc Nanocolumns Prepared by Glancing Angle Deposition

    Directory of Open Access Journals (Sweden)

    Yang Liu

    2013-01-01

    Full Text Available Organic small material lead phthalocyanine (PbPc nanocolumns were prepared via glancing angle deposition (GLAD on indium tin oxide (ITO coated glass substrates. Organic electron acceptor materials fullerene (C60 was evaporated onto the nanocolumn PbPc thin films to prepare heterojunction structure ITO/PbPc/C60/Bphen/Al organic photovoltaic cells (OPVs. It is worthwhile to mention that C60 molecules firstly fill the voids between PbPc nanocolumns and then form impact C60 layer. The interpenetrating electron donor/acceptor structure effectively enhances interface between electron donor and electron acceptor, which is beneficial to exciton dissociation. The short circuit current density (Jsc of organic photovoltaic devices (OPVs based on PbPc nanocolumn was increased from 1.19 mA/cm2 to 1.74 mA/cm2, which should be attributed to the increase of interface between donor and acceptor. The effect of illumination intensity on the performance of OPVs was investigated by controlling the distance between light source and sample, and the Jsc of two kind of OPVs was increased along with the increase of illumination intensity.

  15. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  16. Insulators for Pb(1-x)Sn(x)Te

    Science.gov (United States)

    Tsuo, Y. H.; Sher, A.

    1981-01-01

    Thin films of LaF3 were e-gun and thermally deposited on several substrates. The e-gun deposited films are fluorine deficient, have high ionic conductivities that persist to 77 K, and high effective dielectric constants. The thermally deposited material tends to be closer to stoichiometric, and have higher effective breakdown field strengths. Thermally deposited LaF3 films with resistivities in excess of 10 to the 12th power ohms - cm were deposited on metal coated glass substrates. The LaF3 films were shown to adhere well to PbSnTe, surviving repeated cycles between room temperature and 77 K. The LaF3 films on GaAs were also studied.

  17. The energy level alignment at the CH_3NH_3PbI_3/pentacene interface

    International Nuclear Information System (INIS)

    Ji, Gengwu; Zhao, Bin; Song, Fei; Zheng, Guanhaojie; Zhang, Xiaonan; Shen, Kongchao; Yang, Yingguo; Chen, Shi; Gao, Xingyu

    2017-01-01

    Highlights: • The Energy Level Alignment at the CH_3NH_3PbI_3/Pentacene Interface was resolved experimentally. • The downward band bending and the dipole found at the pentacene side would favorably drive holes away from the interface into pentacene. • A ∼0.7 eV offset between pentacene HOMO and CH_3NH_3PbI_3 VBM would be in favor of hole transfer whereas a ∼1.35 eV offset between pentacene LUMO and CH_3NH_3PbI_3 CBM should efficiently block the unwanted electron transfer from perovskite to pentacene. • Pentacene could be a viable hole transfer material candidate on perovskite to be explored in perovskite devices. - Abstract: Pentacene thin film on CH_3NH_3PbI_3 was studied by in-situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy to determine their interfacial energy level alignment. A 0.2 eV downward band bending together with a 0.1 eV interfacial dipole was found at the pentacene side, whereas there was no band bending found at the CH_3NH_3PbI_3 side. The offset between CH_3NH_3PbI_3 Valance Band Maximum (VBM) and pentacene Highest Occupied Molecular Orbital (HOMO) and that between CH_3NH_3PbI_3 Conduction Band Minimum (CBM) and pentacene Lowest Unoccupied Molecular Orbital (LUMO) was determined to be 0.7 and 1.35 eV, respectively. The band alignment at this interface is favor of efficient hole transfer, which suggests pentacene as a viable HTL candidate to be explored in perovskite solar cells.

  18. Rietveld refinement of the crystal structure of perovskite solar cells using CH3NH3PbI3 and other compounds

    Science.gov (United States)

    Ando, Yuji; Ohishi, Yuya; Suzuki, Kohei; Suzuki, Atsushi; Oku, Takeo

    2018-01-01

    The crystal structures of perovskite thin films including CH3NH3PbI3, CH3NH3Pb1-xSbxI3, and CH3NH3PbI3-yCly in the solar cell configuration were studied by using Rietveld refinement. For the CH3NH3PbI3 and CH3NH3Pb1-xSbxI3 samples, satisfactory agreement with the measured profiles was obtained with a weighted profile R-factor (Rwp) of as low as 3%. It was shown that the site occupancy of methylammonium (MA) was decreased in the antimonized cell due to the compensation effect of an increased positive charge brought about by replacing Pb2+ with Sb3+. Photovoltaic measurements showed that the power conversion efficiency was enhanced by adding a small amount of Sb to the CH3NH3PbI3 cell, but it was monotonically decreased as the mole fraction of Sb exceeded 0.03. This variation of the conversion efficiency was considered as a result of suppressed crystallization of PbI2 and carrier recombination via MA vacancies in the antimonized cells. In the case of CH3NH3PbI2.88Cl0.12 sample, the agreement with the measured profile with an Rwp of as high as 7% suggested the co-existence of cubic and tetragonal phases in the chlorinated cell.

  19. Electrode processes during the electrorefiniment of lead in the KCl-PbCl2-PbO melt

    Directory of Open Access Journals (Sweden)

    P. S. Pershin

    2015-03-01

    Full Text Available The influence of PbO addition on current efficiency during the electrorefinement of lead in the KCl-PbCl2-PbO melt was investigated. It was shown that with PbO concentration in the KCl-PbCl2 eqiumolar mixture increasing, the current efficiency of lead decreases. Electrode processes mechanism is proposed.

  20. Facile synthesis of CsPbBr3/PbSe composite clusters

    OpenAIRE

    Nguyen, Thang Phan; Ozturk, Abdullah; Park, Jongee; Sohn, Woonbae; Lee, Tae Hyung; Jang, Ho Won; Kim, Soo Young

    2017-01-01

    Abstract In this work, CsPbBr3 and PbSe nanocomposites were synthesized to protect perovskite material from self-enlargement during reaction. UV absorption and photoluminescence (PL) spectra indicate that the addition of Se into CsPbBr3 quantum dots modified the electronic structure of CsPbBr3, increasing the band gap from 2.38 to 2.48 eV as the Cs:Se ratio increased to 1:3. Thus, the emission color of CsPbBr3 perovskite quantum dots was modified from green to blue by increasing the Se ratio ...

  1. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  2. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  3. Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

    Science.gov (United States)

    Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

    2014-12-21

    We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

  4. Hydrogen diffusion in Pb β''-alumina

    International Nuclear Information System (INIS)

    Bates, J.B.; Dudney, N.J.; Wang, J.C.

    1985-01-01

    The mobile Na + ions in Na β''-alumina can be completely exchanged with Pb 2+ ions by treatment in molten PbCl 2 . When this exchange was carried out in the presence of air, protons in the form of OH - were introduced into the conduction layers along with lead ions. Although the concentration of OH - was low, on the order of 5 x 10 -3 per formula unit of Pb/sub 0.84/Mg/sub 0.67/Al/sub 10.33/O_1_7, the distribution of OH - after ion exchange indicated that the proton mobility in Pb β''-alumina is high. The potential use of Pb β''-alumina as a fast proton conductor that is stable at 400 0 C motivated further studies of hydrogen diffusion. In this report, the results of tracer diffusion measurements by isotope exchange will be presented

  5. Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

    Directory of Open Access Journals (Sweden)

    M. M. Zhu

    2011-12-01

    Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

  6. Rb-Sr, Pb-Pb, U-Pb dating in the Bandja plutonic series of Western Cameroon. Donnees geochronologiques (Rb-Sr, Pb-Pb, U-Pb) sur le complexe plutonique de Bandja (Centre-Ouest Cameroun)

    Energy Technology Data Exchange (ETDEWEB)

    Tchankam, C N [Nancy-1 Univ., 54 (France); Vialette, Y [Clermont-Ferrand-2 Univ., 63 - Aubiere (France)

    1994-08-01

    The results of U-Pb zircon and Pb-Pb on minerals and whole rocks are reported on a charnockite syn-D1 from the Bandja series in the western Cameroon. Data are interpreted as representing a plutonic emplacement at 640 Ma. A syn- to post-tectonic pluton is dated at 557 [+-] 8 Ma (Rb-Sr whole rocks isochron). These results confirm the Pan-African age of the charnockitic intrusive body. Initial isotopic [sup 87]Sr/[sup 86]Sr ratios of charnockite (0.709) and granite (0.7089) show the importance of crustal imprint in the magma genesis. (authors).

  7. Residual stress and Young's modulus of pulsed laser deposited PZT thin films: Effect of thin film composition and crystal direction of Si cantilevers

    NARCIS (Netherlands)

    Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Abelmann, Leon; Sardan Sukas, Ö.

    2016-01-01

    We investigated the residual stress and Young's modulus of Pb(ZrxTi1 - x)O3 (PZT) thin films with a (110) preferred orientation and a composition x ranging from 0.2 to 0.8. The films are grown by pulsed laser deposition on silicon cantilevers aligned along the <110> and <100> silicon crystal

  8. Measurement of $Z$ boson production in Pb+Pb and $pp$ collisions by the ATLAS experiment

    CERN Document Server

    Dumancic, Mirta; The ATLAS collaboration

    2018-01-01

    A measurement of $Z$ boson production is performed via the muon decay channel using data samples from the 2015 LHC run obtained at the center-of-mass energy of $\\sqrt{s_{_{\\rm{NN}}}}=5.02$ TeV with a total integrated luminosity of 0.49 nb$^{-1}$ and 25.3 pb$^{-1}$ in Pb+Pb and $pp$, respectively. Integrated and rapidity differential cross sections are measured in a fiducial detector acceptance defined by the $Z$ boson selection of 66<$m_{ll}$<116 GeV and $|y^{ll}|<2.5$ with correction for FSR effects. Nuclear modification factor $R_{AA}$ is obtained from the comparison of the Pb+Pb to the $pp$ data and is found to be consistent with unity. The large statistical sample of Pb+Pb collisions also allows a high-precision test of the Glauber model.

  9. Return of naturally sourced Pb to Atlantic surface waters

    NARCIS (Netherlands)

    Bridgestock, L.; van de Flierdt, T.; Rehkämper, M.; Paul, P.; Middag, R.; Milne, A.; Lohan, M.C.; Baker, A.; Chance, R.; Khondoker, R.; Strekopytov, S.; Humphreys-Williams, E.; Achterberg, E.P.; Rijkenberg, M.J.A.; Gerringa, L.J.A.; De Baar, H.J.W.

    2016-01-01

    Anthropogenic emissions completely overwhelmed natural marine lead (Pb) sources duringthe past century, predominantly due to leaded petrol usage. Here, based on Pb isotopemeasurements, we reassess the importance of natural and anthropogenic Pb sources to thetropical North Atlantic following the

  10. Identification of differentially expressed proteins in response to Pb ...

    African Journals Online (AJOL)

    use

    Lead (Pb) is a widespread nonessential heavy metal in cells and causes molecular damage to plants through the .... proteome patterns of C. roseus leaves under Pb stress. On the 3rd day of Pb ..... germinated Oryza sativa pollen. Mol. Cell.

  11. Pb/Pb isochron ages and Pb isotope geochemistry of Bambui Group carbonate rocks from the southern portion of the Sao Francisco Basin

    International Nuclear Information System (INIS)

    Babinski, M.

    1993-01-01

    This study involves the establishment of chemical and analytical procedure for Pb/Pb dating of Neo proterozoic carbonate rocks and their application to obtaining isochron ages of Bambui Group rocks from the southern portion of the Sao Francisco Basin, Minas Gerais State. The Pb isotopic compositions and U and Pb concentrations determined on more than 90 samples (≅ 600 analyses) from Sete Lagoas do Jacare formations, Bambui Group, from different parts of the basin, showed four distinct types of Pb, here called types I, II, III and IV. Type I Pb was found in samples with low Pb concentrations and relatively high U concentrations. Type II Pb is present in samples with relatively high Pb concentrations and low U concentrations it is non-radiogenic crustal Pb. Type III Pb is also found in samples with high Pb concentrations and low U concentrations but it is radiogenic crustal Pb. Type IV Pb occurs in samples with U/Pb ratios lower than 1 and is intermediate in composition between Type III and Type I Pb. According to the data presented in this paper it is suggested that carbonate rocks from Sete Lagoas Formations were deposited before 686±69 Ma. Rocks from the Lagoa do Jacare Formation, contained only Type II Pb, which does not permit determination of a Pb/Pb age. During the interval from 690 to 500 Ma, the Pb isotope system of the carbonate rocks from the Sao Francisco Basin was disturbed, and in some areas it was totally reset. The imprecise U/Pb ages of 550-600 Ma obtained from some of the carbonate rocks reflect this disturbance. The ages determined in this study are in agreement with most of the published ages of the tectonism from the Brasiliano fold belts marginal to Sao Francisco Craton, showing that the isotopic systems of Sao Francisco Basin rocks were largely affected by brasiliano tectonism. (author)

  12. Charmonium production in pPb and PbPb collisions at 5.02 TeV with CMS

    CERN Document Server

    Stahl Leiton, Andre Govinda

    2017-01-01

    Charmonium states, such as $J/\\psi$ and $\\psi\\left(2S\\right)$ mesons, are excellent probes of the Quark-Gluon Plasma (QGP). The understanding of charmonium production in PbPb collisions requires the inclusion of many phenomena, such as dissociation in the QGP and statistical recombination, on top of cold nuclear matter effects (modifications of nPDFs, initial-state energy loss, nuclear break-up). Measurements of charmonium production in pPb collisions are crucial in order to disentangle the QGP-related effects from cold nuclear matter effects. In this proceeding, final results on the ratio of $\\psi\\left(2S\\right)$ meson to $J/\\psi$ meson yields in PbPb collisions normalized to pp collisions at $\\sqrt{s_{NN}}=5.02$~TeV, are reported. In addition, final prompt and nonprompt $J/\\psi$ meson results in pPb collisions at 5.02~TeV are also shown, using the 2015 pp data taken at the same energy. At last, final results are reported regarding prompt $\\psi\\left(2S\\right)$ meson production in pPb collisions at 5.02~TeV, ...

  13. Study of Bose-Einstein correlations in pp, pPb, and PbPb collisions at the LHC

    Energy Technology Data Exchange (ETDEWEB)

    Sirunyan, Albert M; et al.

    2017-12-19

    Quantum statistical (Bose-Einstein) two-particle correlations are measured in pp collisions at $\\sqrt{s}=$ 0.9, 2.76, and 7 TeV, as well as in pPb and peripheral PbPb collisions at nucleon-nucleon center-of-mass energies of 5.02 and 2.76 TeV, respectively, using the CMS detector at the LHC. Separate analyses are performed for same-sign unidentified charged particles as well as for same-sign pions and kaons identified via their energy loss in the silicon tracker. The characteristics of the one-, two-, and three-dimensional correlation functions are studied as functions of the pair average transverse momentum ($k_\\mathrm{T}$) and the charged-particle multiplicity in the event. For all systems, the extracted correlation radii steadily increase with the event multiplicity, and decrease with increasing $k_\\mathrm{T}$. The radii are in the range 1-5 fm, the largest values corresponding to very high multiplicity pPb interactions and to peripheral PbPb collisions with multiplicities similar to those seen in pPb data. It is also observed that the dependencies of the radii on multiplicity and $k_\\mathrm{T}$ largely factorize. At the same multiplicity, the radii are relatively independent of the colliding system and center-of-mass energy.

  14. Study of Bose-Einstein correlations in pp, pPb, and PbPb collisions at the LHC

    CERN Document Server

    Sirunyan, Albert M; CMS Collaboration; Adam, Wolfgang; Ambrogi, Federico; Asilar, Ece; Bergauer, Thomas; Brandstetter, Johannes; Brondolin, Erica; Dragicevic, Marko; Erö, Janos; Flechl, Martin; Friedl, Markus; Fruehwirth, Rudolf; Ghete, Vasile Mihai; Grossmann, Johannes; Hrubec, Josef; Jeitler, Manfred; König, Axel; Krammer, Natascha; Krätschmer, Ilse; Liko, Dietrich; Madlener, Thomas; Mikulec, Ivan; Pree, Elias; Rabady, Dinyar; Rad, Navid; Rohringer, Herbert; Schieck, Jochen; Schöfbeck, Robert; Spanring, Markus; Spitzbart, Daniel; Strauss, Josef; Waltenberger, Wolfgang; Wittmann, Johannes; Wulz, Claudia-Elisabeth; Zarucki, Mateusz; Chekhovsky, Vladimir; Mossolov, Vladimir; Suarez Gonzalez, Juan; De Wolf, Eddi A; Di Croce, Davide; Janssen, Xavier; Lauwers, Jasper; Van De Klundert, Merijn; Van Haevermaet, Hans; Van Mechelen, Pierre; Van Remortel, Nick; Abu Zeid, Shimaa; Blekman, Freya; D'Hondt, Jorgen; De Bruyn, Isabelle; De Clercq, Jarne; Deroover, Kevin; Flouris, Giannis; Lontkovskyi, Denys; Lowette, Steven; Moortgat, Seth; Moreels, Lieselotte; Olbrechts, Annik; Python, Quentin; Skovpen, Kirill; Tavernier, Stefaan; Van Doninck, Walter; Van Mulders, Petra; Van Parijs, Isis; Brun, Hugues; Clerbaux, Barbara; De Lentdecker, Gilles; Delannoy, Hugo; Fasanella, Giuseppe; Favart, Laurent; Goldouzian, Reza; Grebenyuk, Anastasia; Karapostoli, Georgia; Lenzi, Thomas; Luetic, Jelena; Maerschalk, Thierry; Marinov, Andrey; Randle-conde, Aidan; Seva, Tomislav; Vander Velde, Catherine; Vanlaer, Pascal; Vannerom, David; Yonamine, Ryo; Zenoni, Florian; Zhang, Fengwangdong; Cimmino, Anna; Cornelis, Tom; Dobur, Didar; Fagot, Alexis; Gul, Muhammad; Khvastunov, Illia; Poyraz, Deniz; Roskas, Christos; Salva Diblen, Sinem; Tytgat, Michael; Verbeke, Willem; Zaganidis, Nicolas; Bakhshiansohi, Hamed; Bondu, Olivier; Brochet, Sébastien; Bruno, Giacomo; Caudron, Adrien; De Visscher, Simon; Delaere, Christophe; Delcourt, Martin; Francois, Brieuc; Giammanco, Andrea; Jafari, Abideh; Komm, Matthias; Krintiras, Georgios; Lemaitre, Vincent; Magitteri, Alessio; Mertens, Alexandre; Musich, Marco; Piotrzkowski, Krzysztof; Quertenmont, Loic; Vidal Marono, Miguel; Wertz, Sébastien; Beliy, Nikita; Aldá Júnior, Walter Luiz; Alves, Fábio Lúcio; Alves, Gilvan; Brito, Lucas; Correa Martins Junior, Marcos; Hensel, Carsten; Moraes, Arthur; Pol, Maria Elena; Rebello Teles, Patricia; Belchior Batista Das Chagas, Ewerton; Carvalho, Wagner; Chinellato, Jose; Custódio, Analu; Melo Da Costa, Eliza; Da Silveira, Gustavo Gil; De Jesus Damiao, Dilson; Fonseca De Souza, Sandro; Huertas Guativa, Lina Milena; Malbouisson, Helena; Melo De Almeida, Miqueias; Mora Herrera, Clemencia; Mundim, Luiz; Nogima, Helio; Santoro, Alberto; Sznajder, Andre; Tonelli Manganote, Edmilson José; Torres Da Silva De Araujo, Felipe; Vilela Pereira, Antonio; Ahuja, Sudha; Bernardes, Cesar Augusto; Dogra, Sunil; Tomei, Thiago; De Moraes Gregores, Eduardo; Mercadante, Pedro G; Novaes, Sergio F; Padula, Sandra; Romero Abad, David; Ruiz Vargas, José Cupertino; Aleksandrov, Aleksandar; Hadjiiska, Roumyana; Iaydjiev, Plamen; Misheva, Milena; Rodozov, Mircho; Shopova, Mariana; Stoykova, Stefka; Sultanov, Georgi; Dimitrov, Anton; Glushkov, Ivan; Litov, Leander; Pavlov, Borislav; Petkov, Peicho; Fang, Wenxing; Gao, Xuyang; Ahmad, Muhammad; Bian, Jian-Guo; Chen, Guo-Ming; Chen, He-Sheng; Chen, Mingshui; Chen, Ye; Jiang, Chun-Hua; Leggat, Duncan; Liao, Hongbo; Liu, Zhenan; Romeo, Francesco; Shaheen, Sarmad Masood; Spiezia, Aniello; Tao, Junquan; Wang, Chunjie; Wang, Zheng; Yazgan, Efe; Zhang, Huaqiao; Zhao, Jingzhou; Ban, Yong; Chen, Geng; Li, Qiang; Liu, Shuai; Mao, Yajun; Qian, Si-Jin; Wang, Dayong; Xu, Zijun; Avila, Carlos; Cabrera, Andrés; Carrillo Montoya, Camilo Andres; Chaparro Sierra, Luisa Fernanda; Florez, Carlos; González Hernández, Carlos Felipe; Ruiz Alvarez, José David; Courbon, Benoit; Godinovic, Nikola; Lelas, Damir; Puljak, Ivica; Ribeiro Cipriano, Pedro M; Sculac, Toni; Antunovic, Zeljko; Kovac, Marko; Brigljevic, Vuko; Ferencek, Dinko; Kadija, Kreso; Mesic, Benjamin; Starodumov, Andrei; Susa, Tatjana; Ather, Mohsan Waseem; Attikis, Alexandros; Mavromanolakis, Georgios; Mousa, Jehad; Nicolaou, Charalambos; Ptochos, Fotios; Razis, Panos A; Rykaczewski, Hans; Finger, Miroslav; Finger Jr, Michael; Carrera Jarrin, Edgar; Assran, Yasser; Mahmoud, Mohammed; Mahrous, Ayman; Dewanjee, Ram Krishna; Kadastik, Mario; Perrini, Lucia; Raidal, Martti; Tiko, Andres; Veelken, Christian; Eerola, Paula; Pekkanen, Juska; Voutilainen, Mikko; Härkönen, Jaakko; Jarvinen, Terhi; Karimäki, Veikko; Kinnunen, Ritva; Lampén, Tapio; Lassila-Perini, Kati; Lehti, Sami; Lindén, Tomas; Luukka, Panja-Riina; Tuominen, Eija; Tuominiemi, Jorma; Tuovinen, Esa; Talvitie, Joonas; Tuuva, Tuure; Besancon, Marc; Couderc, Fabrice; Dejardin, Marc; Denegri, Daniel; Faure, Jean-Louis; Ferri, Federico; Ganjour, Serguei; Ghosh, Saranya; Givernaud, Alain; Gras, Philippe; Hamel de Monchenault, Gautier; Jarry, Patrick; Kucher, Inna; Locci, Elizabeth; Machet, Martina; Malcles, Julie; Negro, Giulia; Rander, John; Rosowsky, André; Sahin, Mehmet Özgür; Titov, Maksym; Abdulsalam, Abdulla; Antropov, Iurii; Baffioni, Stephanie; Beaudette, Florian; Busson, Philippe; Cadamuro, Luca; Charlot, Claude; Granier de Cassagnac, Raphael; Jo, Mihee; Lisniak, Stanislav; Lobanov, Artur; Martin Blanco, Javier; Nguyen, Matthew; Ochando, Christophe; Ortona, Giacomo; Paganini, Pascal; Pigard, Philipp; Regnard, Simon; Salerno, Roberto; Sauvan, Jean-Baptiste; Sirois, Yves; Stahl Leiton, Andre Govinda; Strebler, Thomas; Yilmaz, Yetkin; Zabi, Alexandre; Zghiche, Amina; Agram, Jean-Laurent; Andrea, Jeremy; Bloch, Daniel; Brom, Jean-Marie; Buttignol, Michael; Chabert, Eric Christian; Chanon, Nicolas; Collard, Caroline; Conte, Eric; Coubez, Xavier; Fontaine, Jean-Charles; Gelé, Denis; Goerlach, Ulrich; Jansová, Markéta; Le Bihan, Anne-Catherine; Tonon, Nicolas; Van Hove, Pierre; Gadrat, Sébastien; Beauceron, Stephanie; Bernet, Colin; Boudoul, Gaelle; Chierici, Roberto; Contardo, Didier; Depasse, Pierre; El Mamouni, Houmani; Fay, Jean; Finco, Linda; Gascon, Susan; Gouzevitch, Maxime; Grenier, Gérald; Ille, Bernard; Lagarde, Francois; Laktineh, Imad Baptiste; Lethuillier, Morgan; Mirabito, Laurent; Pequegnot, Anne-Laure; Perries, Stephane; Popov, Andrey; Sordini, Viola; Vander Donckt, Muriel; Viret, Sébastien; Toriashvili, Tengizi; Tsamalaidze, Zviad; Autermann, Christian; Beranek, Sarah; Feld, Lutz; Kiesel, Maximilian Knut; Klein, Katja; Lipinski, Martin; Preuten, Marius; Schomakers, Christian; Schulz, Johannes; Verlage, Tobias; Albert, Andreas; Dietz-Laursonn, Erik; Duchardt, Deborah; Endres, Matthias; Erdmann, Martin; Erdweg, Sören; Esch, Thomas; Fischer, Robert; Güth, Andreas; Hamer, Matthias; Hebbeker, Thomas; Heidemann, Carsten; Hoepfner, Kerstin; Knutzen, Simon; Merschmeyer, Markus; Meyer, Arnd; Millet, Philipp; Mukherjee, Swagata; Olschewski, Mark; Padeken, Klaas; Pook, Tobias; Radziej, Markus; Reithler, Hans; Rieger, Marcel; Scheuch, Florian; Teyssier, Daniel; Thüer, Sebastian; Flügge, Günter; Kargoll, Bastian; Kress, Thomas; Künsken, Andreas; Lingemann, Joschka; Müller, Thomas; Nehrkorn, Alexander; Nowack, Andreas; Pistone, Claudia; Pooth, Oliver; Stahl, Achim; Aldaya Martin, Maria; Arndt, Till; Asawatangtrakuldee, Chayanit; Beernaert, Kelly; Behnke, Olaf; Behrens, Ulf; Bermúdez Martínez, Armando; Bin Anuar, Afiq Aizuddin; Borras, Kerstin; Botta, Valeria; Campbell, Alan; Connor, Patrick; Contreras-Campana, Christian; Costanza, Francesco; Diez Pardos, Carmen; Eckerlin, Guenter; Eckstein, Doris; Eichhorn, Thomas; Eren, Engin; Gallo, Elisabetta; Garay Garcia, Jasone; Geiser, Achim; Gizhko, Andrii; Grados Luyando, Juan Manuel; Grohsjean, Alexander; Gunnellini, Paolo; Harb, Ali; Hauk, Johannes; Hempel, Maria; Jung, Hannes; Kalogeropoulos, Alexis; Kasemann, Matthias; Keaveney, James; Kleinwort, Claus; Korol, Ievgen; Krücker, Dirk; Lange, Wolfgang; Lelek, Aleksandra; Lenz, Teresa; Leonard, Jessica; Lipka, Katerina; Lohmann, Wolfgang; Mankel, Rainer; Melzer-Pellmann, Isabell-Alissandra; Meyer, Andreas Bernhard; Mittag, Gregor; Mnich, Joachim; Mussgiller, Andreas; Ntomari, Eleni; Pitzl, Daniel; Placakyte, Ringaile; Raspereza, Alexei; Roland, Benoit; Savitskyi, Mykola; Saxena, Pooja; Shevchenko, Rostyslav; Spannagel, Simon; Stefaniuk, Nazar; Van Onsem, Gerrit Patrick; Walsh, Roberval; Wen, Yiwen; Wichmann, Katarzyna; Wissing, Christoph; Zenaiev, Oleksandr; Bein, Samuel; Blobel, Volker; Centis Vignali, Matteo; Dreyer, Torben; Garutti, Erika; Gonzalez, Daniel; Haller, Johannes; Hinzmann, Andreas; Hoffmann, Malte; Karavdina, Anastasia; Klanner, Robert; Kogler, Roman; Kovalchuk, Nataliia; Kurz, Simon; Lapsien, Tobias; Marchesini, Ivan; Marconi, Daniele; Meyer, Mareike; Niedziela, Marek; Nowatschin, Dominik; Pantaleo, Felice; Peiffer, Thomas; Perieanu, Adrian; Scharf, Christian; Schleper, Peter; Schmidt, Alexander; Schumann, Svenja; Schwandt, Joern; Sonneveld, Jory; Stadie, Hartmut; Steinbrück, Georg; Stober, Fred-Markus Helmut; Stöver, Marc; Tholen, Heiner; Troendle, Daniel; Usai, Emanuele; Vanelderen, Lukas; Vanhoefer, Annika; Vormwald, Benedikt; Akbiyik, Melike; Barth, Christian; Baur, Sebastian; Butz, Erik; Caspart, René; Chwalek, Thorsten; Colombo, Fabio; De Boer, Wim; Dierlamm, Alexander; Freund, Benedikt; Friese, Raphael; Giffels, Manuel; Gilbert, Andrew; Haitz, Dominik; Hartmann, Frank; Heindl, Stefan Michael; Husemann, Ulrich; Kassel, Florian; Kudella, Simon; Mildner, Hannes; Mozer, Matthias Ulrich; Müller, Thomas; Plagge, Michael; Quast, Gunter; Rabbertz, Klaus; Schröder, Matthias; Shvetsov, Ivan; Sieber, Georg; Simonis, Hans-Jürgen; Ulrich, Ralf; Wayand, Stefan; Weber, Marc; Weiler, Thomas; Williamson, Shawn; Wöhrmann, Clemens; Wolf, Roger; Anagnostou, Georgios; Daskalakis, Georgios; Geralis, Theodoros; Giakoumopoulou, Viktoria Athina; Kyriakis, Aristotelis; Loukas, Demetrios; Topsis-Giotis, Iasonas; Kesisoglou, Stilianos; Panagiotou, Apostolos; Saoulidou, Niki; Evangelou, Ioannis; Foudas, Costas; Kokkas, Panagiotis; Mallios, Stavros; Manthos, Nikolaos; Papadopoulos, Ioannis; Paradas, Evangelos; Strologas, John; Triantis, Frixos A; Csanad, Mate; Filipovic, Nicolas; Pasztor, Gabriella; Bencze, Gyorgy; Hajdu, Csaba; Horvath, Dezso; Hunyadi, Ádám; Sikler, Ferenc; Veszpremi, Viktor; Vesztergombi, Gyorgy; Zsigmond, Anna Julia; Beni, Noemi; Czellar, Sandor; Karancsi, János; Makovec, Alajos; Molnar, Jozsef; Szillasi, Zoltan; Bartók, Márton; Raics, Peter; Trocsanyi, Zoltan Laszlo; Ujvari, Balazs; Choudhury, Somnath; Komaragiri, Jyothsna Rani; Bahinipati, Seema; Bhowmik, Sandeep; Mal, Prolay; Mandal, Koushik; Nayak, Aruna; Sahoo, Deepak Kumar; Sahoo, Niladribihari; Swain, Sanjay Kumar; Bansal, Sunil; Beri, Suman Bala; Bhatnagar, Vipin; Bhawandeep, Bhawandeep; Chawla, Ridhi; Dhingra, Nitish; Kalsi, Amandeep Kaur; Kaur, Anterpreet; Kaur, Manjit; Kumar, Ramandeep; Kumari, Priyanka; Mehta, Ankita; Singh, Jasbir; Walia, Genius; Kumar, Ashok; Shah, Aashaq; Bhardwaj, Ashutosh; Chauhan, Sushil; Choudhary, Brajesh C; Garg, Rocky Bala; Keshri, Sumit; Kumar, Ajay; Malhotra, Shivali; Naimuddin, Md; Ranjan, Kirti; Sharma, Ramkrishna; Sharma, Varun; Bhardwaj, Rishika; Bhattacharya, Rajarshi; Bhattacharya, Satyaki; Dey, Sourav; Dutt, Suneel; Dutta, Suchandra; Ghosh, Shamik; Majumdar, Nayana; Modak, Atanu; Mondal, Kuntal; Mukhopadhyay, Supratik; Nandan, Saswati; Purohit, Arnab; Roy, Ashim; Roy, Debarati; Roy Chowdhury, Suvankar; Sarkar, Subir; Sharan, Manoj; Thakur, Shalini; Behera, Prafulla Kumar; Chudasama, Ruchi; Dutta, Dipanwita; Jha, Vishwajeet; Kumar, Vineet; Mohanty, Ajit Kumar; Netrakanti, Pawan Kumar; Pant, Lalit Mohan; Shukla, Prashant; Topkar, Anita; Aziz, Tariq; Dugad, Shashikant; Mahakud, Bibhuprasad; Mitra, Soureek; Mohanty, Gagan Bihari; Sur, Nairit; Sutar, Bajrang; Banerjee, Sudeshna; Bhattacharya, Soham; Chatterjee, Suman; Das, Pallabi; Guchait, Monoranjan; Jain, Sandhya; Kumar, Sanjeev; Maity, Manas; Majumder, Gobinda; Mazumdar, Kajari; Sarkar, Tanmay; Wickramage, Nadeesha; Chauhan, Shubhanshu; Dube, Sourabh; Hegde, Vinay; Kapoor, Anshul; Kothekar, Kunal; Pandey, Shubham; Rane, Aditee; Sharma, Seema; Chenarani, Shirin; Eskandari Tadavani, Esmaeel; Etesami, Seyed Mohsen; Khakzad, Mohsen; Mohammadi Najafabadi, Mojtaba; Naseri, Mohsen; Paktinat Mehdiabadi, Saeid; Rezaei Hosseinabadi, Ferdos; Safarzadeh, Batool; Zeinali, Maryam; Felcini, Marta; Grunewald, Martin; Abbrescia, Marcello; Calabria, Cesare; Caputo, Claudio; Colaleo, Anna; Creanza, Donato; Cristella, Leonardo; De Filippis, Nicola; De Palma, Mauro; Errico, Filippo; Fiore, Luigi; Iaselli, Giuseppe; Lezki, Samet; Maggi, Giorgio; Maggi, Marcello; Miniello, Giorgia; My, Salvatore; Nuzzo, Salvatore; Pompili, Alexis; Pugliese, Gabriella; Radogna, Raffaella; Ranieri, Antonio; Selvaggi, Giovanna; Sharma, Archana; Silvestris, Lucia; Venditti, Rosamaria; Verwilligen, Piet; Abbiendi, Giovanni; Battilana, Carlo; Bonacorsi, Daniele; Braibant-Giacomelli, Sylvie; Campanini, Renato; Capiluppi, Paolo; Castro, Andrea; Cavallo, Francesca Romana; Chhibra, Simranjit Singh; Codispoti, Giuseppe; Cuffiani, Marco; Dallavalle, Gaetano-Marco; Fabbri, Fabrizio; Fanfani, Alessandra; Fasanella, Daniele; Giacomelli, Paolo; Grandi, Claudio; Guiducci, Luigi; Marcellini, Stefano; Masetti, Gianni; Montanari, Alessandro; Navarria, Francesco; Perrotta, Andrea; Rossi, Antonio; Rovelli, Tiziano; Siroli, Gian Piero; Tosi, Nicolò; Albergo, Sebastiano; Costa, Salvatore; Di Mattia, Alessandro; Giordano, Ferdinando; Potenza, Renato; Tricomi, Alessia; Tuve, Cristina; Barbagli, Giuseppe; Chatterjee, Kalyanmoy; Ciulli, Vitaliano; Civinini, Carlo; D'Alessandro, Raffaello; Focardi, Ettore; Lenzi, Piergiulio; Meschini, Marco; Paoletti, Simone; Russo, Lorenzo; Sguazzoni, Giacomo; Strom, Derek; Viliani, Lorenzo; Benussi, Luigi; Bianco, Stefano; Fabbri, Franco; Piccolo, Davide; Primavera, Federica; Calvelli, Valerio; Ferro, Fabrizio; Robutti, Enrico; Tosi, Silvano; Brianza, Luca; Brivio, Francesco; Ciriolo, Vincenzo; Dinardo, Mauro Emanuele; Fiorendi, Sara; Gennai, Simone; Ghezzi, Alessio; Govoni, Pietro; Malberti, Martina; Malvezzi, Sandra; Manzoni, Riccardo Andrea; Menasce, Dario; Moroni, Luigi; Paganoni, Marco; Pauwels, Kristof; Pedrini, Daniele; Pigazzini, Simone; Ragazzi, Stefano; Tabarelli de Fatis, Tommaso; Buontempo, Salvatore; Cavallo, Nicola; Di Guida, Salvatore; Fabozzi, Francesco; Fienga, Francesco; Iorio, Alberto Orso Maria; Khan, Wajid Ali; Lista, Luca; Meola, Sabino; Paolucci, Pierluigi; Sciacca, Crisostomo; Thyssen, Filip; Azzi, Patrizia; Bacchetta, Nicola; Benato, Lisa; Bisello, Dario; Boletti, Alessio; Carlin, Roberto; Carvalho Antunes De Oliveira, Alexandra; Checchia, Paolo; De Castro Manzano, Pablo; Dorigo, Tommaso; Dosselli, Umberto; Gasparini, Fabrizio; Gasparini, Ugo; Gonella, Franco; Gozzelino, Andrea; Gulmini, Michele; Lacaprara, Stefano; Lujan, Paul; Margoni, Martino; Pozzobon, Nicola; Ronchese, Paolo; Rossin, Roberto; Zanetti, Marco; Zotto, Pierluigi; Zumerle, Gianni; Braghieri, Alessandro; Fallavollita, Francesco; Magnani, Alice; Montagna, Paolo; Ratti, Sergio P; Re, Valerio; Ressegotti, Martina; Riccardi, Cristina; Salvini, Paola; Vai, Ilaria; Vitulo, Paolo; Alunni Solestizi, Luisa; Biasini, Maurizio; Bilei, Gian Mario; Cecchi, Claudia; Ciangottini, Diego; Fanò, Livio; Lariccia, Paolo; Leonardi, Roberto; Manoni, Elisa; Mantovani, Giancarlo; Mariani, Valentina; Menichelli, Mauro; Rossi, Alessandro; Santocchia, Attilio; Spiga, Daniele; Androsov, Konstantin; Azzurri, Paolo; Bagliesi, Giuseppe; Bernardini, Jacopo; Boccali, Tommaso; Borrello, Laura; Castaldi, Rino; Ciocci, Maria Agnese; Dell'Orso, Roberto; Fedi, Giacomo; Giannini, Leonardo; Giassi, Alessandro; Grippo, Maria Teresa; Ligabue, Franco; Lomtadze, Teimuraz; Manca, Elisabetta; Mandorli, Giulio; Martini, Luca; Messineo, Alberto; Palla, Fabrizio; Rizzi, Andrea; Savoy-Navarro, Aurore; Spagnolo, Paolo; Tenchini, Roberto; Tonelli, Guido; Venturi, Andrea; Verdini, Piero Giorgio; Barone, Luciano; Cavallari, Francesca; Cipriani, Marco; Daci, Nadir; Del Re, Daniele; Diemoz, Marcella; Gelli, Simone; Longo, Egidio; Margaroli, Fabrizio; Marzocchi, Badder; Meridiani, Paolo; Organtini, Giovanni; Paramatti, Riccardo; Preiato, Federico; Rahatlou, Shahram; Rovelli, Chiara; Santanastasio, Francesco; Amapane, Nicola; Arcidiacono, Roberta; Argiro, Stefano; Arneodo, Michele; Bartosik, Nazar; Bellan, Riccardo; Biino, Cristina; Cartiglia, Nicolo; Cenna, Francesca; Costa, Marco; Covarelli, Roberto; Degano, Alessandro; Demaria, Natale; Kiani, Bilal; Mariotti, Chiara; Maselli, Silvia; Migliore, Ernesto; Monaco, Vincenzo; Monteil, Ennio; Monteno, Marco; Obertino, Maria Margherita; Pacher, Luca; Pastrone, Nadia; Pelliccioni, Mario; Pinna Angioni, Gian Luca; Ravera, Fabio; Romero, Alessandra; Ruspa, Marta; Sacchi, Roberto; Shchelina, Ksenia; Sola, Valentina; Solano, Ada; Staiano, Amedeo; Traczyk, Piotr; Belforte, Stefano; Casarsa, Massimo; Cossutti, Fabio; Della Ricca, Giuseppe; Zanetti, Anna; Kim, Dong Hee; Kim, Gui Nyun; Kim, Min Suk; Lee, Jeongeun; Lee, Sangeun; Lee, Seh Wook; Moon, Chang-Seong; Oh, Young Do; Sekmen, Sezen; Son, Dong-Chul; Yang, Yu Chul; Lee, Ari; Kim, Hyunchul; Moon, Dong Ho; Oh, Geonhee; Brochero Cifuentes, Javier Andres; Goh, Junghwan; Kim, Tae Jeong; Cho, Sungwoong; Choi, Suyong; Go, Yeonju; Gyun, Dooyeon; Ha, Seungkyu; Hong, Byung-Sik; Jo, Youngkwon; Kim, Yongsun; Lee, Kisoo; Lee, Kyong Sei; Lee, Songkyo; Lim, Jaehoon; Park, Sung Keun; Roh, Youn; Almond, John; Kim, Junho; Kim, Jae Sung; Lee, Haneol; Lee, Kyeongpil; Nam, Kyungwook; Oh, Sung Bin; Radburn-Smith, Benjamin Charles; Seo, Seon-hee; Yang, Unki; Yoo, Hwi Dong; Yu, Geum Bong; Choi, Minkyoo; Kim, Hyunyong; Kim, Ji Hyun; Lee, Jason Sang Hun; Park, Inkyu; Ryu, Geonmo; Choi, Young-Il; Hwang, Chanwook; Lee, Jongseok; Yu, Intae; Dudenas, Vytautas; Juodagalvis, Andrius; Vaitkus, Juozas; Ahmed, Ijaz; Ibrahim, Zainol Abidin; Md Ali, Mohd Adli Bin; Mohamad Idris, Faridah; Wan Abdullah, Wan Ahmad Tajuddin; Yusli, Mohd Nizam; Zolkapli, Zukhaimira; Duran-Osuna, Cecilia; Castilla-Valdez, Heriberto; De La Cruz-Burelo, Eduard; Heredia-De La Cruz, Ivan; Lopez-Fernandez, Ricardo; Mejia Guisao, Jhovanny; Rabadán-Trejo, Raúl Iraq; Ramirez-Sanchez, Gabriel; Reyes-Almanza, Rogelio; Sánchez Hernández, Alberto; Carrillo Moreno, Salvador; Oropeza Barrera, Cristina; Vazquez Valencia, Fabiola; Pedraza, Isabel; Salazar Ibarguen, Humberto Antonio; Uribe Estrada, Cecilia; Morelos Pineda, Antonio; Krofcheck, David; Butler, Philip H; Ahmad, Ashfaq; Ahmad, Muhammad; Hassan, Qamar; Hoorani, Hafeez R; Saddique, Asif; Shah, Mehar Ali; Shoaib, Muhammad; Waqas, Muhammad; Bialkowska, Helena; Bluj, Michal; Boimska, Bozena; Frueboes, Tomasz; Górski, Maciej; Kazana, Malgorzata; Nawrocki, Krzysztof; Romanowska-Rybinska, Katarzyna; Szleper, Michal; Zalewski, Piotr; Bunkowski, Karol; Byszuk, Adrian; Doroba, Krzysztof; Kalinowski, Artur; Konecki, Marcin; Krolikowski, Jan; Misiura, Maciej; Olszewski, Michal; Pyskir, Andrzej; Walczak, Marek; Bargassa, Pedrame; Beirão Da Cruz E Silva, Cristóvão; Calpas, Betty; Di Francesco, Agostino; Faccioli, Pietro; Gallinaro, Michele; Hollar, Jonathan; Leonardo, Nuno; Lloret Iglesias, Lara; Nemallapudi, Mythra Varun; Seixas, Joao; Toldaiev, Oleksii; Vadruccio, Daniele; Varela, Joao; Afanasiev, Serguei; Bunin, Pavel; Gavrilenko, Mikhail; Golutvin, Igor; Gorbunov, Ilya; Kamenev, Alexey; Karjavin, Vladimir; Lanev, Alexander; Malakhov, Alexander; Matveev, Viktor; Palichik, Vladimir; Perelygin, Victor; Shmatov, Sergey; Shulha, Siarhei; Skatchkov, Nikolai; Smirnov, Vitaly; Voytishin, Nikolay; Zarubin, Anatoli; Ivanov, Yury; Kim, Victor; Kuznetsova, Ekaterina; Levchenko, Petr; Murzin, Victor; Oreshkin, Vadim; Smirnov, Igor; Sulimov, Valentin; Uvarov, Lev; Vavilov, Sergey; Vorobyev, Alexey; Andreev, Yuri; Dermenev, Alexander; Gninenko, Sergei; Golubev, Nikolai; Karneyeu, Anton; Kirsanov, Mikhail; Krasnikov, Nikolai; Pashenkov, Anatoli; Tlisov, Danila; Toropin, Alexander; Epshteyn, Vladimir; Gavrilov, Vladimir; Lychkovskaya, Natalia; Popov, Vladimir; Pozdnyakov, Ivan; Safronov, Grigory; Spiridonov, Alexander; Stepennov, Anton; Toms, Maria; Vlasov, Evgueni; Zhokin, Alexander; Aushev, Tagir; Bylinkin, Alexander; Andreev, Vladimir; Azarkin, Maksim; Dremin, Igor; Kirakosyan, Martin; Terkulov, Adel; Baskakov, Alexey; Belyaev, Andrey; Boos, Edouard; Ershov, Alexander; Gribushin, Andrey; Khein, Lev; Klyukhin, Vyacheslav; Kodolova, Olga; Lokhtin, Igor; Lukina, Olga; Miagkov, Igor; Obraztsov, Stepan; Petrushanko, Sergey; Savrin, Viktor; Snigirev, Alexander; Blinov, Vladimir; Shtol, Dmitry; Skovpen, Yuri; Azhgirey, Igor; Bayshev, Igor; Bitioukov, Sergei; Elumakhov, Dmitry; Kachanov, Vassili; Kalinin, Alexey; Konstantinov, Dmitri; Krychkine, Victor; Petrov, Vladimir; Ryutin, Roman; Sobol, Andrei; Troshin, Sergey; Tyurin, Nikolay; Uzunian, Andrey; Volkov, Alexey; Adzic, Petar; Cirkovic, Predrag; Devetak, Damir; Dordevic, Milos; Milosevic, Jovan; Rekovic, Vladimir; Alcaraz Maestre, Juan; Barrio Luna, Mar; Cerrada, Marcos; Colino, Nicanor; De La Cruz, Begona; Delgado Peris, Antonio; Escalante Del Valle, Alberto; Fernandez Bedoya, Cristina; Fernández Ramos, Juan Pablo; Flix, Jose; Fouz, Maria Cruz; Garcia-Abia, Pablo; Gonzalez Lopez, Oscar; Goy Lopez, Silvia; Hernandez, Jose M; Josa, Maria Isabel; Pérez-Calero Yzquierdo, Antonio María; Puerta Pelayo, Jesus; Quintario Olmeda, Adrián; Redondo, Ignacio; Romero, Luciano; Senghi Soares, Mara; Álvarez Fernández, Adrian; Albajar, Carmen; de Trocóniz, Jorge F; Missiroli, Marino; Moran, Dermot; Cuevas, Javier; Erice, Carlos; Fernandez Menendez, Javier; Gonzalez Caballero, Isidro; González Fernández, Juan Rodrigo; Palencia Cortezon, Enrique; Sanchez Cruz, Sergio; Suárez Andrés, Ignacio; Vischia, Pietro; Vizan Garcia, Jesus Manuel; Cabrillo, Iban Jose; Calderon, Alicia; Chazin Quero, Barbara; Curras, Esteban; Fernandez, Marcos; Garcia-Ferrero, Juan; Gomez, Gervasio; Lopez Virto, Amparo; Marco, Jesus; Martinez Rivero, Celso; Martinez Ruiz del Arbol, Pablo; Matorras, Francisco; Piedra Gomez, Jonatan; Rodrigo, Teresa; Ruiz-Jimeno, Alberto; Scodellaro, Luca; Trevisani, Nicolò; Vila, Ivan; Vilar Cortabitarte, Rocio; Abbaneo, Duccio; Auffray, Etiennette; Baillon, Paul; Ball, Austin; Barney, David; Bianco, Michele; Bloch, Philippe; Bocci, Andrea; Botta, Cristina; Camporesi, Tiziano; Castello, Roberto; Cepeda, Maria; Cerminara, Gianluca; Chapon, Emilien; Chen, Yi; D'Enterria, David; Dabrowski, Anne; Daponte, Vincenzo; David Tinoco Mendes, Andre; De Gruttola, Michele; De Roeck, Albert; Di Marco, Emanuele; Dobson, Marc; Dorney, Brian; Du Pree, Tristan; Dünser, Marc; Dupont, Niels; Elliott-Peisert, Anna; Everaerts, Pieter; Franzoni, Giovanni; Fulcher, Jonathan; Funk, Wolfgang; Gigi, Dominique; Gill, Karl; Glege, Frank; Gulhan, Doga; Gundacker, Stefan; Guthoff, Moritz; Harris, Philip; Hegeman, Jeroen; Innocente, Vincenzo; Janot, Patrick; Karacheban, Olena; Kieseler, Jan; Kirschenmann, Henning; Knünz, Valentin; Kornmayer, Andreas; Kortelainen, Matti J; Krammer, Manfred; Lange, Clemens; Lecoq, Paul; Lourenco, Carlos; Lucchini, Marco Toliman; Malgeri, Luca; Mannelli, Marcello; Martelli, Arabella; Meijers, Frans; Merlin, Jeremie Alexandre; Mersi, Stefano; Meschi, Emilio; Milenovic, Predrag; Moortgat, Filip; Mulders, Martijn; Neugebauer, Hannes; Orfanelli, Styliani; Orsini, Luciano; Pape, Luc; Perez, Emmanuel; Peruzzi, Marco; Petrilli, Achille; Petrucciani, Giovanni; Pfeiffer, Andreas; Pierini, Maurizio; Racz, Attila; Reis, Thomas; Rolandi, Gigi; Rovere, Marco; Sakulin, Hannes; Schäfer, Christoph; Schwick, Christoph; Seidel, Markus; Selvaggi, Michele; Sharma, Archana; Silva, Pedro; Sphicas, Paraskevas; Steggemann, Jan; Stoye, Markus; Tosi, Mia; Treille, Daniel; Triossi, Andrea; Tsirou, Andromachi; Veckalns, Viesturs; Veres, Gabor Istvan; Verweij, Marta; Wardle, Nicholas; Zeuner, Wolfram Dietrich; Bertl, Willi; Caminada, Lea; Deiters, Konrad; Erdmann, Wolfram; Horisberger, Roland; Ingram, Quentin; Kaestli, Hans-Christian; Kotlinski, Danek; Langenegger, Urs; Rohe, Tilman; Wiederkehr, Stephan Albert; Bachmair, Felix; Bäni, Lukas; Berger, Pirmin; Bianchini, Lorenzo; Casal, Bruno; Dissertori, Günther; Dittmar, Michael; Donegà, Mauro; Grab, Christoph; Heidegger, Constantin; Hits, Dmitry; Hoss, Jan; Kasieczka, Gregor; Klijnsma, Thomas; Lustermann, Werner; Mangano, Boris; Marionneau, Matthieu; Meinhard, Maren Tabea; Meister, Daniel; Micheli, Francesco; Musella, Pasquale; Nessi-Tedaldi, Francesca; Pandolfi, Francesco; Pata, Joosep; Pauss, Felicitas; Perrin, Gaël; Perrozzi, Luca; Quittnat, Milena; Schönenberger, Myriam; Shchutska, Lesya; Tavolaro, Vittorio Raoul; Theofilatos, Konstantinos; Vesterbacka Olsson, Minna Leonora; Wallny, Rainer; Zagozdzinska, Agnieszka; Zhu, De Hua; Aarrestad, Thea Klaeboe; Amsler, Claude; Canelli, Maria Florencia; De Cosa, Annapaola; Del Burgo, Riccardo; Donato, Silvio; Galloni, Camilla; Hreus, Tomas; Kilminster, Benjamin; Ngadiuba, Jennifer; Pinna, Deborah; Rauco, Giorgia; Robmann, Peter; Salerno, Daniel; Seitz, Claudia; Takahashi, Yuta; Zucchetta, Alberto; Candelise, Vieri; Doan, Thi Hien; Jain, Shilpi; Khurana, Raman; Kuo, Chia-Ming; Lin, Willis; Pozdnyakov, Andrey; Yu, Shin-Shan; Kumar, Arun; Chang, Paoti; Chao, Yuan; Chen, Kai-Feng; Chen, Po-Hsun; Fiori, Francesco; Hou, George Wei-Shu; Hsiung, Yee; Liu, Yueh-Feng; Lu, Rong-Shyang; Miñano Moya, Mercedes; Paganis, Efstathios; Psallidas, Andreas; Tsai, Jui-fa; Asavapibhop, Burin; Kovitanggoon, Kittikul; Singh, Gurpreet; Srimanobhas, Norraphat; Adiguzel, Aytul; Boran, Fatma; Cerci, Salim; Damarseckin, Serdal; Demiroglu, Zuhal Seyma; Dozen, Candan; Dumanoglu, Isa; Girgis, Semiray; Gokbulut, Gul; Guler, Yalcin; Hos, Ilknur; Kangal, Evrim Ersin; Kara, Ozgun; Kayis Topaksu, Aysel; Kiminsu, Ugur; Oglakci, Mehmet; Onengut, Gulsen; Ozdemir, Kadri; Sunar Cerci, Deniz; Tali, Bayram; Turkcapar, Semra; Zorbakir, Ibrahim Soner; Zorbilmez, Caglar; Bilin, Bugra; Karapinar, Guler; Ocalan, Kadir; Yalvac, Metin; Zeyrek, Mehmet; Gülmez, Erhan; Kaya, Mithat; Kaya, Ozlem; Tekten, Sevgi; Yetkin, Elif Asli; Nazlim Agaras, Merve; Atay, Serhat; Cakir, Altan; Cankocak, Kerem; Grynyov, Boris; Levchuk, Leonid; Sorokin, Pavel; Aggleton, Robin; Ball, Fionn; Beck, Lana; Brooke, James John; Burns, Douglas; Clement, Emyr; Cussans, David; Davignon, Olivier; Flacher, Henning; Goldstein, Joel; Grimes, Mark; Heath, Greg P; Heath, Helen F; Jacob, Jeson; Kreczko, Lukasz; Lucas, Chris; Newbold, Dave M; Paramesvaran, Sudarshan; Poll, Anthony; Sakuma, Tai; Seif El Nasr-storey, Sarah; Smith, Dominic; Smith, Vincent J; Bell, Ken W; Belyaev, Alexander; Brew, Christopher; Brown, Robert M; Calligaris, Luigi; Cieri, Davide; Cockerill, David JA; Coughlan, John A; Harder, Kristian; Harper, Sam; Olaiya, Emmanuel; Petyt, David; Shepherd-Themistocleous, Claire; Thea, Alessandro; Tomalin, Ian R; Williams, Thomas; Bainbridge, Robert; Breeze, Shane; Buchmuller, Oliver; Bundock, Aaron; Casasso, Stefano; Citron, Matthew; Colling, David; Corpe, Louie; Dauncey, Paul; Davies, Gavin; De Wit, Adinda; Della Negra, Michel; Di Maria, Riccardo; Elwood, Adam; Haddad, Yacine; Hall, Geoffrey; Iles, Gregory; James, Thomas; Lane, Rebecca; Laner, Christian; Lyons, Louis; Magnan, Anne-Marie; Malik, Sarah; Mastrolorenzo, Luca; Matsushita, Takashi; Nash, Jordan; Nikitenko, Alexander; Palladino, Vito; Pesaresi, Mark; Raymond, David Mark; Richards, Alexander; Rose, Andrew; Scott, Edward; Seez, Christopher; Shtipliyski, Antoni; Summers, Sioni; Tapper, Alexander; Uchida, Kirika; Vazquez Acosta, Monica; Virdee, Tejinder; Winterbottom, Daniel; Wright, Jack; Zenz, Seth Conrad; Cole, Joanne; Hobson, Peter R; Khan, Akram; Kyberd, Paul; Reid, Ivan; Symonds, Philip; Teodorescu, Liliana; Turner, Mark; Borzou, Ahmad; Call, Kenneth; Dittmann, Jay; Hatakeyama, Kenichi; Liu, Hongxuan; Pastika, Nathaniel; Smith, Caleb; Bartek, Rachel; Dominguez, Aaron; Buccilli, Andrew; Cooper, Seth; Henderson, Conor; Rumerio, Paolo; West, Christopher; Arcaro, Daniel; Avetisyan, Aram; Bose, Tulika; Gastler, Daniel; Rankin, Dylan; Richardson, Clint; Rohlf, James; Sulak, Lawrence; Zou, David; Benelli, Gabriele; Cutts, David; Garabedian, Alex; Hakala, John; Heintz, Ulrich; Hogan, Julie Managan; Kwok, Ka Hei Martin; Laird, Edward; Landsberg, Greg; Mao, Zaixing; Narain, Meenakshi; Pazzini, Jacopo; Piperov, Stefan; Sagir, Sinan; Syarif, Rizki; Yu, David; Band, Reyer; Brainerd, Christopher; Breedon, Richard; Burns, Dustin; Calderon De La Barca Sanchez, Manuel; Chertok, Maxwell; Conway, John; Conway, Rylan; Cox, Peter Timothy; Erbacher, Robin; Flores, Chad; Funk, Garrett; Gardner, Michael; Ko, Winston; Lander, Richard; Mclean, Christine; Mulhearn, Michael; Pellett, Dave; Pilot, Justin; Shalhout, Shalhout; Shi, Mengyao; Smith, John; Squires, Michael; Stolp, Dustin; Tos, Kyle; Tripathi, Mani; Wang, Zhangqier; Bachtis, Michail; Bravo, Cameron; Cousins, Robert; Dasgupta, Abhigyan; Florent, Alice; Hauser, Jay; Ignatenko, Mikhail; Mccoll, Nickolas; Saltzberg, David; Schnaible, Christian; Valuev, Vyacheslav; Bouvier, Elvire; Burt, Kira; Clare, Robert; Ellison, John Anthony; Gary, J William; Ghiasi Shirazi, Seyyed Mohammad Amin; Hanson, Gail; Heilman, Jesse; Jandir, Pawandeep; Kennedy, Elizabeth; Lacroix, Florent; Long, Owen Rosser; Olmedo Negrete, Manuel; Paneva, Mirena Ivova; Shrinivas, Amithabh; Si, Weinan; Wang, Long; Wei, Hua; Wimpenny, Stephen; Yates, Brent; Branson, James G; Cittolin, Sergio; Derdzinski, Mark; Gerosa, Raffaele; Hashemi, Bobak; Holzner, André; Klein, Daniel; Kole, Gouranga; Krutelyov, Vyacheslav; Letts, James; Macneill, Ian; Masciovecchio, Mario; Olivito, Dominick; Padhi, Sanjay; Pieri, Marco; Sani, Matteo; Sharma, Vivek; Simon, Sean; Tadel, Matevz; Vartak, Adish; Wasserbaech, Steven; Wood, John; Würthwein, Frank; Yagil, Avraham; Zevi Della Porta, Giovanni; Amin, Nick; Bhandari, Rohan; Bradmiller-Feld, John; Campagnari, Claudio; Dishaw, Adam; Dutta, Valentina; Franco Sevilla, Manuel; George, Christopher; Golf, Frank; Gouskos, Loukas; Gran, Jason; Heller, Ryan; Incandela, Joe; Mullin, Sam Daniel; Ovcharova, Ana; Qu, Huilin; Richman, Jeffrey; Stuart, David; Suarez, Indara; Yoo, Jaehyeok; Anderson, Dustin; Bendavid, Joshua; Bornheim, Adolf; Lawhorn, Jay Mathew; Newman, Harvey B; Nguyen, Thong; Pena, Cristian; Spiropulu, Maria; Vlimant, Jean-Roch; Xie, Si; Zhang, Zhicai; Zhu, Ren-Yuan; Andrews, Michael Benjamin; Ferguson, Thomas; Mudholkar, Tanmay; Paulini, Manfred; Russ, James; Sun, Menglei; Vogel, Helmut; Vorobiev, Igor; Weinberg, Marc; Cumalat, John Perry; Ford, William T; Jensen, Frank; Johnson, Andrew; Krohn, Michael; Leontsinis, Stefanos; Mulholland, Troy; Stenson, Kevin; Wagner, Stephen Robert; Alexander, James; Chaves, Jorge; Chu, Jennifer; Dittmer, Susan; Mcdermott, Kevin; Mirman, Nathan; Patterson, Juliet Ritchie; Rinkevicius, Aurelijus; Ryd, Anders; Skinnari, Louise; Soffi, Livia; Tan, Shao Min; Tao, Zhengcheng; Thom, Julia; Tucker, Jordan; Wittich, Peter; Zientek, Margaret; Abdullin, Salavat; Albrow, Michael; Apollinari, Giorgio; Apresyan, Artur; Apyan, Aram; Banerjee, Sunanda; Bauerdick, Lothar AT; Beretvas, Andrew; Berryhill, Jeffrey; Bhat, Pushpalatha C; Bolla, Gino; Burkett, Kevin; Butler, Joel Nathan; Canepa, Anadi; Cerati, Giuseppe Benedetto; Cheung, Harry; Chlebana, Frank; Cremonesi, Matteo; Duarte, Javier; Elvira, Victor Daniel; Freeman, Jim; Gecse, Zoltan; Gottschalk, Erik; Gray, Lindsey; Green, Dan; Grünendahl, Stefan; Gutsche, Oliver; Harris, Robert M; Hasegawa, Satoshi; Hirschauer, James; Hu, Zhen; Jayatilaka, Bodhitha; Jindariani, Sergo; Johnson, Marvin; Joshi, Umesh; Klima, Boaz; Kreis, Benjamin; Lammel, Stephan; Lincoln, Don; Lipton, Ron; Liu, Miaoyuan; Liu, Tiehui; Lopes De Sá, Rafael; Lykken, Joseph; Maeshima, Kaori; Magini, Nicolo; Marraffino, John Michael; Maruyama, Sho; Mason, David; McBride, Patricia; Merkel, Petra; Mrenna, Stephen; Nahn, Steve; O'Dell, Vivian; Pedro, Kevin; Prokofyev, Oleg; Rakness, Gregory; Ristori, Luciano; Schneider, Basil; Sexton-Kennedy, Elizabeth; Soha, Aron; Spalding, William J; Spiegel, Leonard; Stoynev, Stoyan; Strait, James; Strobbe, Nadja; Taylor, Lucas; Tkaczyk, Slawek; Tran, Nhan Viet; Uplegger, Lorenzo; Vaandering, Eric Wayne; Vernieri, Caterina; Verzocchi, Marco; Vidal, Richard; Wang, Michael; Weber, Hannsjoerg Artur; Whitbeck, Andrew; Acosta, Darin; Avery, Paul; Bortignon, Pierluigi; Bourilkov, Dimitri; Brinkerhoff, Andrew; Carnes, Andrew; Carver, Matthew; Curry, David; Das, Souvik; Field, Richard D; Furic, Ivan-Kresimir; Konigsberg, Jacobo; Korytov, Andrey; Kotov, Khristian; Ma, Peisen; Matchev, Konstantin; Mei, Hualin; Mitselmakher, Guenakh; Rank, Douglas; Sperka, David; Terentyev, Nikolay; Thomas, Laurent; Wang, Jian; Wang, Sean-Jiun; Yelton, John; Joshi, Yagya Raj; Linn, Stephan; Markowitz, Pete; Rodriguez, Jorge Luis; Ackert, Andrew; Adams, Todd; Askew, Andrew; Hagopian, Sharon; Hagopian, Vasken; Johnson, Kurtis F; Kolberg, Ted; Martinez, German; Perry, Thomas; Prosper, Harrison; Saha, Anirban; Santra, Arka; Yohay, Rachel; Baarmand, Marc M; Bhopatkar, Vallary; Colafranceschi, Stefano; Hohlmann, Marcus; Noonan, Daniel; Roy, Titas; Yumiceva, Francisco; Adams, Mark Raymond; Apanasevich, Leonard; Berry, Douglas; Betts, Russell Richard; Cavanaugh, Richard; Chen, Xuan; Evdokimov, Olga; Gerber, Cecilia Elena; Hangal, Dhanush Anil; Hofman, David Jonathan; Jung, Kurt; Kamin, Jason; Sandoval Gonzalez, Irving Daniel; Tonjes, Marguerite; Trauger, Hallie; Varelas, Nikos; Wang, Hui; Wu, Zhenbin; Zhang, Jingyu; Bilki, Burak; Clarida, Warren; Dilsiz, Kamuran; Durgut, Süleyman; Gandrajula, Reddy Pratap; Haytmyradov, Maksat; Khristenko, Viktor; Merlo, Jean-Pierre; Mermerkaya, Hamit; Mestvirishvili, Alexi; Moeller, Anthony; Nachtman, Jane; Ogul, Hasan; Onel, Yasar; Ozok, Ferhat; Penzo, Aldo; Snyder, Christina; Tiras, Emrah; Wetzel, James; Yi, Kai; Blumenfeld, Barry; Cocoros, Alice; Eminizer, Nicholas; Fehling, David; Feng, Lei; Gritsan, Andrei; Maksimovic, Petar; Roskes, Jeffrey; Sarica, Ulascan; Swartz, Morris; Xiao, Meng; You, Can; Al-bataineh, Ayman; Baringer, Philip; Bean, Alice; Boren, Samuel; Bowen, James; Castle, James; Khalil, Sadia; Kropivnitskaya, Anna; Majumder, Devdatta; Mcbrayer, William; Murray, Michael; Royon, Christophe; Sanders, Stephen; Schmitz, Erich; Stringer, Robert; Tapia Takaki, Daniel; Wang, Quan; Ivanov, Andrew; Kaadze, Ketino; Maravin, Yurii; Mohammadi, Abdollah; Saini, Lovedeep Kaur; Skhirtladze, Nikoloz; Toda, Sachiko; Rebassoo, Finn; Wright, Douglas; Anelli, Christopher; Baden, Drew; Baron, Owen; Belloni, Alberto; Calvert, Brian; Eno, Sarah Catherine; Ferraioli, Charles; Hadley, Nicholas John; Jabeen, Shabnam; Jeng, Geng-Yuan; Kellogg, Richard G; Kunkle, Joshua; Mignerey, Alice; Ricci-Tam, Francesca; Shin, Young Ho; Skuja, Andris; Tonwar, Suresh C; Abercrombie, Daniel; Allen, Brandon; Azzolini, Virginia; Barbieri, Richard; Baty, Austin; Bi, Ran; Brandt, Stephanie; Busza, Wit; Cali, Ivan Amos; D'Alfonso, Mariarosaria; Demiragli, Zeynep; Gomez Ceballos, Guillelmo; Goncharov, Maxim; Hsu, Dylan; Iiyama, Yutaro; Innocenti, Gian Michele; Klute, Markus; Kovalskyi, Dmytro; Lai, Yue Shi; Lee, Yen-Jie; Levin, Andrew; Luckey, Paul David; Maier, Benedikt; Marini, Andrea Carlo; Mcginn, Christopher; Mironov, Camelia; Narayanan, Siddharth; Niu, Xinmei; Paus, Christoph; Roland, Christof; Roland, Gunther; Salfeld-Nebgen, Jakob; Stephans, George; Tatar, Kaya; Velicanu, Dragos; Wang, Jing; Wang, Ta-Wei; Wyslouch, Bolek; Benvenuti, Alberto; Chatterjee, Rajdeep Mohan; Evans, Andrew; Hansen, Peter; Kalafut, Sean; Kubota, Yuichi; Lesko, Zachary; Mans, Jeremy; Nourbakhsh, Shervin; Ruckstuhl, Nicole; Rusack, Roger; Turkewitz, Jared; Acosta, John Gabriel; Oliveros, Sandra; Avdeeva, Ekaterina; Bloom, Kenneth; Claes, Daniel R; Fangmeier, Caleb; Gonzalez Suarez, Rebeca; Kamalieddin, Rami; Kravchenko, Ilya; Monroy, Jose; Siado, Joaquin Emilo; Snow, Gregory R; Stieger, Benjamin; Alyari, Maral; Dolen, James; Godshalk, Andrew; Harrington, Charles; Iashvili, Ia; Nguyen, Duong; Parker, Ashley; Rappoccio, Salvatore; Roozbahani, Bahareh; Alverson, George; Barberis, Emanuela; Hortiangtham, Apichart; Massironi, Andrea; Morse, David Michael; Nash, David; Orimoto, Toyoko; Teixeira De Lima, Rafael; Trocino, Daniele; Wood, Darien; Bhattacharya, Saptaparna; Charaf, Otman; Hahn, Kristan Allan; Mucia, Nicholas; Odell, Nathaniel; Pollack, Brian; Schmitt, Michael Henry; Sung, Kevin; Trovato, Marco; Velasco, Mayda; Dev, Nabarun; Hildreth, Michael; Hurtado Anampa, Kenyi; Jessop, Colin; Karmgard, Daniel John; Kellams, Nathan; Lannon, Kevin; Loukas, Nikitas; Marinelli, Nancy; Meng, Fanbo; Mueller, Charles; Musienko, Yuri; Planer, Michael; Reinsvold, Allison; Ruchti, Randy; Smith, Geoffrey; Taroni, Silvia; Wayne, Mitchell; Wolf, Matthias; Woodard, Anna; Alimena, Juliette; Antonelli, Louis; Bylsma, Ben; Durkin, Lloyd Stanley; Flowers, Sean; Francis, Brian; Hart, Andrew; Hill, Christopher; Ji, Weifeng; Liu, Bingxuan; Luo, Wuming; Puigh, Darren; Winer, Brian L; Wulsin, Howard Wells; Benaglia, Andrea; Cooperstein, Stephane; Driga, Olga; Elmer, Peter; Hardenbrook, Joshua; Hebda, Philip; Higginbotham, Samuel; Lange, David; Luo, Jingyu; Marlow, Daniel; Mei, Kelvin; Ojalvo, Isabel; Olsen, James; Palmer, Christopher; Piroué, Pierre; Stickland, David; Tully, Christopher; Malik, Sudhir; Norberg, Scarlet; Barker, Anthony; Barnes, Virgil E; Folgueras, Santiago; Gutay, Laszlo; Jha, Manoj; Jones, Matthew; Jung, Andreas Werner; Khatiwada, Ajeeta; Miller, David Harry; Neumeister, Norbert; Peng, Cheng-Chieh; Schulte, Jan-Frederik; Sun, Jian; Wang, Fuqiang; Xie, Wei; Cheng, Tongguang; Parashar, Neeti; Stupak, John; Adair, Antony; Akgun, Bora; Chen, Zhenyu; Ecklund, Karl Matthew; Geurts, Frank JM; Guilbaud, Maxime; Li, Wei; Michlin, Benjamin; Northup, Michael; Padley, Brian Paul; Roberts, Jay; Rorie, Jamal; Tu, Zhoudunming; Zabel, James; Bodek, Arie; de Barbaro, Pawel; Demina, Regina; Duh, Yi-ting; Ferbel, Thomas; Galanti, Mario; Garcia-Bellido, Aran; Han, Jiyeon; Hindrichs, Otto; Khukhunaishvili, Aleko; Lo, Kin Ho; Tan, Ping; Verzetti, Mauro; Ciesielski, Robert; Goulianos, Konstantin; Mesropian, Christina; Agapitos, Antonis; Chou, John Paul; Gershtein, Yuri; Gómez Espinosa, Tirso Alejandro; Halkiadakis, Eva; Heindl, Maximilian; Hughes, Elliot; Kaplan, Steven; Kunnawalkam Elayavalli, Raghav; Kyriacou, Savvas; Lath, Amitabh; Montalvo, Roy; Nash, Kevin; Osherson, Marc; Saka, Halil; Salur, Sevil; Schnetzer, Steve; Sheffield, David; Somalwar, Sunil; Stone, Robert; Thomas, Scott; Thomassen, Peter; Walker, Matthew; Delannoy, Andrés G; Foerster, Mark; Heideman, Joseph; Riley, Grant; Rose, Keith; Spanier, Stefan; Thapa, Krishna; Bouhali, Othmane; Castaneda Hernandez, Alfredo; Celik, Ali; Dalchenko, Mykhailo; De Mattia, Marco; Delgado, Andrea; Dildick, Sven; Eusebi, Ricardo; Gilmore, Jason; Huang, Tao; Kamon, Teruki; Mueller, Ryan; Pakhotin, Yuriy; Patel, Rishi; Perloff, Alexx; Perniè, Luca; Rathjens, Denis; Safonov, Alexei; Tatarinov, Aysen; Ulmer, Keith; Akchurin, Nural; Damgov, Jordan; De Guio, Federico; Dudero, Phillip Russell; Faulkner, James; Gurpinar, Emine; Kunori, Shuichi; Lamichhane, Kamal; Lee, Sung Won; Libeiro, Terence; Peltola, Timo; Undleeb, Sonaina; Volobouev, Igor; Wang, Zhixing; Greene, Senta; Gurrola, Alfredo; Janjam, Ravi; Johns, Willard; Maguire, Charles; Melo, Andrew; Ni, Hong; Sheldon, Paul; Tuo, Shengquan; Velkovska, Julia; Xu, Qiao; Arenton, Michael Wayne; Barria, Patrizia; Cox, Bradley; Hirosky, Robert; Ledovskoy, Alexander; Li, Hengne; Neu, Christopher; Sinthuprasith, Tutanon; Sun, Xin; Wang, Yanchu; Wolfe, Evan; Xia, Fan; Harr, Robert; Karchin, Paul Edmund; Sturdy, Jared; Zaleski, Shawn; Brodski, Michael; Buchanan, James; Caillol, Cécile; Dasu, Sridhara; Dodd, Laura; Duric, Senka; Gomber, Bhawna; Grothe, Monika; Herndon, Matthew; Hervé, Alain; Hussain, Usama; Klabbers, Pamela; Lanaro, Armando; Levine, Aaron; Long, Kenneth; Loveless, Richard; Pierro, Giuseppe Antonio; Polese, Giovanni; Ruggles, Tyler; Savin, Alexander; Smith, Nicholas; Smith, Wesley H; Taylor, Devin; Woods, Nathaniel

    2017-01-01

    Quantum statistical (Bose-Einstein) two-particle correlations are measured in pp collisions at $\\sqrt{s}= $ 0.9, 2.76, and 7 TeV, as well as in pPb and peripheral PbPb collisions at nucleon-nucleon center-of-mass energies of 5.02 and 2.76 TeV, respectively, using the CMS detector at the LHC. Separate analyses are performed for same-sign unidentified charged particles as well as for same-sign pions and kaons identified via their energy loss in the silicon tracker. The characteristics of the one-, two-, and three-dimensional correlation functions are studied as functions of the pair average transverse momentum ($k_{\\mathrm{T}}$) and the charged-particle multiplicity in the event. For all systems, the extracted correlation radii steadily increase with the event multiplicity, and decrease with increasing $k_{\\mathrm{T}}$. The radii are in the range 1-5 fm, the largest values corresponding to very high multiplicity pPb interactions and to peripheral PbPb collisions with multiplicities similar to those seen in pPb ...

  15. On dewetting of thin films due to crystallization (crystallization dewetting).

    Science.gov (United States)

    Habibi, Mehran; Rahimzadeh, Amin; Eslamian, Morteza

    2016-03-01

    Drying and crystallization of a thin liquid film of an ionic or a similar solution can cause dewetting in the resulting thin solid film. This paper aims at investigating this type of dewetting, herein termed "crystallization dewetting", using PbI2 dissolved in organic solvents as the model solution. PbI2 solid films are usually used in X-ray detection and lead halide perovskite solar cells. In this work, PbI2 films are fabricated using spin coating and the effect of major parameters influencing the crystallization dewetting, including the type of the solvent, solution concentration, drying temperature, spin speed, as well as imposed vibration on the substrate are studied on dewetting, surface profile and coverage, using confocal scanning laser microscopy. Simplified hydrodynamic governing equations of crystallization in thin films are presented and using a mathematical representation of the process, it is phenomenologically demonstrated that crystallization dewetting occurs due to the absorption and consumption of the solution surrounding a growing crystal. Among the results, it is found that a low spin speed (high thickness), a high solution concentration and a low drying temperature promote crystal growth, and therefore crystallization dewetting. It is also shown that imposed vibration on the substrate can affect the crystal size and crystallization dewetting.

  16. Flow and correlation phenomena measurements in pp, pPb and PbPb collisions at CMS

    CERN Document Server

    Padula, Sandra

    2017-01-01

    The quark-gluon plasma created in high energy collisions of large nuclei exhibits strong anisotropic collective behavior as a nearly perfect fluid, flowing with little frictional resistance or viscosity. It has been investigated extensively over the past years employing two or more particle correlations. An overview of collective flow and particle correlation measurements at CMS as a function of transverse momentum, pseudorapidity, event multiplicity, for both charged hadrons or identified particles will be presented. These results are compared among pp, pPb and PbPb systems and several aspects of their intriguing similarities are discussed. 

  17. Flow and correlation phenomena measurements in pp, pPb and PbPb collisions at CMS

    Directory of Open Access Journals (Sweden)

    S. Padula Sandra

    2018-01-01

    Full Text Available The quark-gluon plasma created in high energy collisions of large nuclei exhibits strong anisotropic collective behavior as a nearly perfect fluid, flowing with little frictional resistance or viscosity. It has been investigated extensively over the past years employing two or more particle correlations. An overview of collective flow and particle correlation measurements at CMS as a function of transverse momentum, pseudorapidity, event multiplicity, for both charged hadrons or identified particles will be presented. These results are compared among pp, pPb and PbPb systems and several aspects of their intriguing similarities are discussed.

  18. Precise determination of the neutron scattering length of lead isotopes 204Pb,207Pb and 208Pb by neutron interferometry

    International Nuclear Information System (INIS)

    Ioffe, A.; Ermakov, O.; Karpikhin, I.; Krupchitsky, P.; Mikula, P.; Lukas, P.; Vrana, M.

    2000-01-01

    The neutron scattering length of lead isotopes 204 Pb, 207 Pb and 208 Pb are determined by a set of neutron interferometry experiments. The obtained values b (208) =9.494(30) fm, b (207) =9.286(16) fm, b (204) =10.893(78) fm have much higher accuracy then current table data. Together with the precise value of b for natural lead, these results represent a complete set of data and allow one to calculate b (206) =9.221(69) fm, which is in the very good agreement with the present day experimental value. (orig.)

  19. Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Dhlamini, M.S.; Terblans, J.J.; Ntwaeaborwa, O.M.; Ngaruiya, J.M.; Hillie, K.T.; Botha, J.R.; Swart, H.C.

    2008-01-01

    Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO 2 ) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar + laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 deg. C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures

  20. A feasibility study of U-Pb and Pb-Pb dating of kimberlites using groundmass mineral fractions and whole-rock samples

    International Nuclear Information System (INIS)

    Kramers, J.D.; Smith, C.B.

    1983-01-01

    This paper describes partly successful attempts to determine emplacement ages of kimberlites by U-Pb and Pb-Pb methods involving groundmass minerals with high U content (notably perovskite) and whole-rock kimberlite samples. U/Pb ratios in perovskite in the matrix of kimberlites can be two orders of magnitude larger than in the rest of the kimberlite material, and with simple mineral separation techniques moderate success was achieved in U-Pb dating of fresh samples of younger kimberlites (around 100 Ma). The differences in U/Pb ratios between kimberlite samples from different parts of the same pipe have also been found to be large enough, in some cases, to allow reasonably accurate U-Pb age determination. In older kimberlites the U-Pb ages obtained were mostly imcompatible with geological constraints and results obtained by other methods. However, for such pipes use of Pb-Pb systematics yields realistic age limits in some cases

  1. Heats of adsorption of Pb on pristine and electron-irradiated poly(methyl methacrylate) by microcalorimetry

    Science.gov (United States)

    Diaz, S. F.; Zhu, J. F.; Harris, J. J. W.; Goetsch, P.; Merte, L. R.; Campbell, Charles T.

    2005-12-01

    The heat of adsorption and sticking probability were measured for Pb gas atoms adsorbing onto clean poly(methyl methacrylate) (PMMA) and electron-irradiated PMMA. The Pb atoms interact very weakly with the outgassed pristine PMMA surface, with a sticking probability of 0.02 ± 0.02. They deposit a heat into the PMMA of 12.7 ± 0.7 kJ/mol of dosed Pb, independent of Pb exposure up to 10 ML. This is slightly less than would be expected even if no Pb atoms stuck to the PMMA, but if they completely thermally accommodated to the substrate temperature during their collision with the surface. This proves that thermal accommodation is incomplete, highlighting the weakness of the Pb-PMMA interaction. Damaging the PMMA surface with electrons causes an increase in reactivity with Pb, as shown by increases in the initial heat of adsorption up to 134.0 ± 0.7 kJ/mol and the initial sticking probability up to 0.51 ± 0.01. These both increase with increasing coverage toward the values expected for Pb adsorption onto a bulk Pb surface with coverage dependences suggesting that metal islands nucleate at electron-induced defects, and grow into large 3D islands of low number density. This is the first calorimetric measurement of any metal adsorption energy onto any polymer surface wherein the sticking probability of the metal also was measured. The PMMA film was spin coated directly onto the heat detector, a pyroelectric polymer foil (polyvinylidene fluoride—PVDF) precoated on both sides with thin metal electrodes. It provides a detector sensitivity of ˜450 V/J with a pulse-to-pulse standard deviation of 1.2 kJ/mol and absolute accuracy within 2%.

  2. Ostwald ripening of Pb nanocrystalline phase in mechanically milled Al-Pb alloys and the influence of Cu additive

    International Nuclear Information System (INIS)

    Wu, Z.F.; Zeng, M.Q.; Ouyang, L.Z.; Zhang, X.P.; Zhu, M.

    2005-01-01

    The coarsening behavior of nanosized Pb phase in both Al-10%Pb and Al-10%Pb-4.5%Cu alloys has been studied by X-ray diffraction and transmission electron microscopy analysis. The coarsening of Pb nanophase in Al-Pb alloys still follows the classical ripening theory (the LSW theory) and the addition of Cu decreases the coarsening rate of Pb nanophase

  3. On the position of local levels of defects in proton-irradiated Pb1-xSnxTe alloys

    International Nuclear Information System (INIS)

    Brandt, N.B.; Gas'kov, A.M.; Ladygin, E.A.; Skipetrov, E.P.; Khorosh, A.G.

    1989-01-01

    Effect of fast proton irradiation (T≅300 K, E=200 keV, F≤2x10 14 cm -2 ) on electrophysical properties of thin layers p-Pb 1-x Sn x Te (0.17 ≤x≤ 0.26) is investigated. Saturation of radiation flux dependences of hole density due to occurrence of a resonance level under irradiation, which is near the ceiling of the valence band of alloys, and due to stabilization of the Fermi level with the resonance level is detected. Possibility of coordination of novadays data on the position of the levels of radiation defects in alloys Pb 1-x Sn x Te is discussed

  4. Influence of substrate temperature on structural, morphological and electrical properties of PbSe film deposited by radio frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wenran, E-mail: fengwenran@bipt.edu.cn [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Wang, Xiaoyang [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Chen, Fei [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Liu, Wan [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Zhou, Hai; Wang, Shuo; Li, Haoran [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China)

    2015-03-02

    PbSe films were prepared by radio frequency magnetron sputtering from PbSe slices target under different substrate temperatures (from room temperature to 300 °C). The effect of substrate temperature on structural properties of PbSe thin film was investigated. The surface morphology and the crystal structure of film were determined using field emission scanning electron microscopy and X-ray diffractometry, respectively. It was found that the grain shape changed with substrate temperature. When the substrate temperature was below 250 °C, most of the crystal grains were spherical in shape. For temperatures above 250 °C, the grains transformed to triangle or prismatic ones. Meanwhile, with increasing substrate temperature, the preferential orientation of the film changed from (200) to (220). To figure out the intrinsic mechanisms for this behavior, the texture coefficient, as well as the comparison between surface energy and elastic strain energy was performed. At lower temperature, the film growth was determined by surface energy, which was replaced by strain energy at higher temperature. Therefore, the diversity of crystal structure and morphology of the films at different substrate temperatures occurred. Moreover, the electrical properties of the p-type PbSe films are also quite dependent on substrate temperature. With substrate temperature increased, the electrical resistivity decreased from 1.88 to 0.14 Ω cm, while the carrier concentration increased from 1.74 × 10{sup 18} to 4.08 × 10{sup 19} cm{sup −3} as the mobility was enhanced from 0.54 to 2.21 cm{sup 2}/Vs. - Highlights: • PbSe thin films were deposited by radio frequency magnetron sputtering. • Substrate temperature determines crystal structure of PbSe films. • Transformation behaviors of PbSe films were explained by energy calculations.

  5. Spectroscopy of 186 Pb with mass identification

    International Nuclear Information System (INIS)

    Baxter, A.M.; Byrne, A.P.; Australian National Univ., Canberra, ACT; Dracoulis, G.D.; Janssens, R.V.F.; Bearden, I.G.; Henry, R.G.

    1993-10-01

    Transitions in the very neutron-deficient isotope 186 Pb have been identified in mass-gated, recoil-γ and recoil-γ-γ coincidence data obtained with a Fragment Mass Analyser and Compton-suppressed Ge-detector array. The results of the present work confirm and extend a band of levels tentatively proposed in earlier work done elsewhere, and provide a definitive mass assignment of the observed transitions. The band observed in 186 Pb bears a very close resemblance to the yrast band in the isotones 184 Hg, supporting the view that the 186 Pb band is built upon a prolate structure. 11 refs., 4 figs., 1 tab

  6. Pb-Pb and U-Pb zircon ages of archean syntetocnic granites of the Carajas metallogenic province, northern Brazil

    International Nuclear Information System (INIS)

    Barros, Carlos Eduardo de Mesquita; Sardinha, Alex Souza; Barbosa, Jaime dos Passos de Oliveira; Krimski, Robert; Macambira, Moacir Jose Buenano

    2001-01-01

    The Carajas Metallogenic Province is located in the southeastern Amazonian Craton. It has been divided in two domains, the southernmost comprises the Rio Maria region and the northernmost corresponds to Caraj region (Souza et al. 1996). The former domain is made up of Archean greenstone sequences (2,97 Ga), TTG (2,9 Ga) and calc-alkaline granitoids (2,87 Ga) (Macambira and Lafon 1995, Leite et al. 1999, Althoff et al. 2000). The Carajas block is constituted of minor mafic granulites (3,00 Ga) and quartzofeldspathic gneisses (2,81 Ga), metavolcanosedimentary sequences (2,76 Ga) and granites (2,76 to 2,56 Ga) (Machado et al. 1991; Huhn et al. 1999, Pidgeon et al. 2000). Widespread anorogenic A-type granites are found in both areas (Docegeo 1988; Dall'Agnol et al. 1994). In the last two decades several authors (Lindenamyer et al. 1994, Barros and Barbey 1998, Huhn et al. 1999 and others) have emphasized the role of the Archean granite magmatism in the tectonicthermal evolution in the Carajas Province. In this paper we discuss the tectonic significance of the Pb- Pb and U-Pb ages obtained in some granitoids from the Carajas region. The Estrela Granite Complex and the granitoids located to the north of Parauapebas were dated by Pb- Pb evaporation zircon method (cf. Kober 1987). Data are presented considering 2σ ∼ . The Pb corrections have been done in the basis of the evolution model of Pb in double stage (cf. Stacey and Kramers 1975). U-Pb zircon method (cf. Krogh 1973, Stacey and Kramers 1975, Parrish 1987, Ludwuig 1999), recently put on routine in the Para-Iso laboratories, was employed to date the granite from the Serra do Rabo area. Analyses were carried on the Finnigan Mat 262 spectrometer (au)

  7. Diagenesis and {sup 210}Pb; Diagenesis y {sup 210}Pb

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Fernandez, Ana Carolina [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias del Mar y Limnologia (Mexico); Sanchez-Cabeza, Joan-Albert [Organismo Internacional de la Energia Atomica, Laboratorios del Medio Marino (Monaco)

    2012-07-01

    One of the basic questions when studying cores for historical reconstructions of environmental changes is whether the profiles of {sup 210}Pb heavy metals and temporal distributions represent actual or have been affected by diagenetic processes. The term refers to processes occurring in the sediment during and after its formation. Such processes can be physical (such as water loss by compaction in clay sludge), biogeochemical (as the decomposition of organic matter) or biological (eg the ingestion of sediments by infauna.) In this chapter we will refer specifically to diagenetic processes caused by the establishment of a vertical zonation of redox conditions and their effects on concentrations of Fe, Mn and other redox-sensitive metals associated. The redox conditions (defined redox potential Eh) of sediments are primarily controlled by the bacterial decomposition of sedimentary organic matter, and are limited by the rate of supply of organic matter (primary production or other sources) and the rate at that accumulates (rate of accumulation of organic matter). During the bacterial decomposition occurs a sequence of reactions involving a succession of oxidants (or electron acceptors) between which the primary oxidant is O{sub 2}. However, when the dissolved O{sub 2} is consumed and the redox potential has decreased enough to favor the most efficient oxidizing the organic matter decomposition can continue through secondary sources of oxidants (suboxic diagenesis). [Spanish] Una de las preguntas basicas cuando estudiamos cores para realizar reconstrucciones historicas de cambios ambientales es si los perfiles de {sup 210}Pb y metales pesados representan las distribuciones temporales reales o si han sido afectados por procesos diageneticos. El termino diagenesis sedimentaria se refiere a los procesos que ocurren en el sedimento durante y despues de su formacion. Estos procesos pueden ser fisicos (como la perdida de agua en lodos arcillosos por compactacion

  8. Preparation of PbS and PbO nanopowders from new Pb(II)(saccharine) coordination polymers

    International Nuclear Information System (INIS)

    Aslani, Alireza; Musevi, Seyid Javad; Şahin, Ertan; Yilmaz, Veysel T.

    2014-01-01

    Highlights: • The complex of compounds “[Pb(H 2 O)(μ-OAc)(μ-sac)] n ” are synthesized at nano and bulk size structurally diverse and show interesting three-dimensional coordination polymers. • Reduction of the particle size of the coordination polymers to a few dozen nanometers results in lower thermal stability when compared to the single crystalline samples. • This study demonstrates that the metal–organic framework may be suitable precursors for the preparation of nanoscale materials with interesting morphologies. - Abstract: Nanopowders and single crystal of new Pb(II) three-dimensional coordination polymer, [Pb(H 2 O)(μ-OAc)(μ-sac)] n “PASAC” were synthesized by a sonochemical and branched tube methods (Yılmaz et al., Z. Anorg. Allg. Chem. 629 (2003) 172). The new nano-structures of Pb(II) coordination polymer were characterized by X-ray crystallography analysis, scanning electron microscopy (SEM), X-ray powder diffraction (XRD), surface analysis (BET), and IR spectroscopy. The crystal structure of these compounds consists of three-dimensional polymeric units. The thermal stability of compounds was studied by thermal gravimetric analysis (TGA) and differential thermal analyses (DTA). PbS and PbO nano-structures were obtained by calcinations of the nano-structures of this coordination polymer at 600 °C

  9. Low-Mass Dielectron Production in pp, p-Pb and Pb-Pb Collisions with ALICE

    CERN Document Server

    Reichelt, Patrick

    2016-01-01

    The ALICE Collaboration measures the production of low-mass dielectrons in pp, p-Pb and Pb-Pb collisions at the LHC. The main detectors used in the analyses are the Inner Tracking System, Time Projection Chamber and Time-Of-Flight detector, all located at mid-rapidity. The dielectron yield in p-Pb collisions shows an overall agreement with the hadronic cocktail. The pair transverse momentum distributions are sensitive to the contributions from open heavy-flavours. In Pb-Pb collisions, uncorrected background-subtracted yields have been extracted in two centrality classes. In pp collisions the production of virtual photons relative to the inclusive yield is determined by analyzing the dielectron excess with respect to the expected hadronic sources. The direct photon cross section is then calculated and found to be in agreement with NLO pQCD calculations. A feasibility study for LHC Run 3 after the ALICE upgrade indicates the possibility for a future measurement of the early effective temperature.

  10. Flow of strange and charged particles in pPb and PbPb collisions at LHC energies

    CERN Document Server

    AUTHOR|(CDS)2083811

    2016-01-01

    Observation of a long-range near-side two-particle correlation (known as the``Ridge'') in high-multiplicity pPb and pp collisions opened up new opportunities of exploring novel QCD dynamics in small collision systems. Latest CMS results in pPb and PbPb collisions will be shown: (1) The multi-particle correlation in pPb collisions will be presented for the high multiplicity events, indicating the collective behavior in small collision systems. (2) Identified $p_T$ spectra of $\\pi^{+}/\\pi^{-}$, $K^{+}/K^{-}$, and $p/\\bar{p}$ in pPb collisions show a strong multiplicity dependence, which indicates radial flow at high multiplicity events. (3) The second-order anisotropy harmonics ($v_2$) of strange particle $K^{0}_{s}$ and $\\Lambda/\\bar{\\Lambda}$ are extracted from long-range correlations as a function of particle multiplicity and $p_T$. The mass ordering effect of $v_n$ at low $p_T$ as predicted by hydrodynamics also points to the strong collective nature of expanding medium in small collision systems. Finally, ...

  11. Charmonium production in pPb and PbPb collisions at 5.02 TeV with CMS

    CERN Document Server

    Martin Blanco, Javier

    2017-01-01

    Charmonium states, such as the J/$\\psi$ and $\\psi$(2S) mesons, are excellent probes of the deconfined state of matter, the Quark-Gluon Plasma (QGP) created in heavy ion collisions. In addition, the measurements in pPb collisions allow to study the cold nuclear matter effects, being crucial to disentangle these from the QGP-related effects in PbPb collisions. In this talk the new nuclear modification factor $R_{\\mathrm{AA}}$ of prompt and nonprompt J/$\\psi$ in PbPb collisions at \\mbox{$\\sqrt{s_{\\mathrm{NN}}}$} $= 5.02$ TeV were presented over a wide kinematic (3 $< \\ensuremath{p_{\\mathrm T}} <$ 50 GeV/$c$, $\\lvert y \\rvert<$ 2.4), and fine event-centrality intervals. The results were compared to those at 2.76 TeV over a similar kinematic range. In addition, new prompt $\\psi$(2S) $R_{\\mathrm{AA}}$ results at 5.02 TeV were reported. Finally the final prompt and nonprompt J/$\\psi$ results, as well as preliminary $\\psi$(2S) results, in pPb collisions at 5.02 TeV, were briefly discussed.

  12. Measurements of b-jet Nuclear Modification Factors in pPb and PbPb Collisions with CMS

    CERN Document Server

    INSPIRE-00338620

    2014-09-23

    We present measurements of the nuclear modification factors RAA and RpA(PYTHIA) of b jets in lead-lead and proton-lead collisions, respectively, using the CMS detector. Jets from b-quark fragmentations are found by exploiting the long lifetime of the b-quark through tagging methods using distributions of the secondary vertex displacement. From these, b-jet cross-sections are calculated and compared to the pp cross-section from the 2.76 TeV pp data collected in 2013 and to a PYTHIA simulation at 5.02 TeV, where these center-of-mass energies correspond to those of the PbPb and pPb data. We observe significant suppression for b jets in PbPb, and a RpA(PYTHIA) value consistent with unity for b jets in pPb. Results from both collision species show remarkable correspondence with inclusive-jet suppression measurements, indicating that mass-dependent energy-loss effects are negligible at pT values greater than around 50 GeV/c. We use 150 inverse {\\mu}b of lead-lead data and 35 inverse nb of proton-lead data collected...

  13. Separation of the charm- and beauty production in p-Pb and Pb-Pb collisions with ALICE

    Energy Technology Data Exchange (ETDEWEB)

    Voelkl, Martin [Physikalisches Institut, Heidelberg Univ. (Germany); Collaboration: ALICE-Collaboration

    2016-07-01

    In heavy-ion collisions the energy loss of heavy quarks is an interesting quantity for the investigation of the properties of the Quark-Gluon Plasma (QGP). Heavy quarks are produced almost exclusively in the initial hard interactions. Thus, they can interact with the surrounding matter throughout its evolution. A comparison of measurements in Pb-Pb and p-Pb collisions helps to separate initial- and final-state effects. The excellent particle identification properties of the ALICE detector and the large branching ratio (∼ 10%) to a final state containing electrons suggest a measurement using semileptonic decay channels. In the analyses presented here, the contributions from charm and beauty are separated statistically using their different impact parameter distributions and empirical estimations of the background. The impact parameter for electrons from hadrons containing a beauty quark is typically larger due to the larger decay length (cτ ∼ 500 μm) of these hadrons. Here, the current results of the analyses of p-Pb at √(s{sub NN}) = 5.02 TeV and Pb-Pb at √(s{sub NN}) = 2.76 TeV are presented.

  14. Layered perovskitic structures in pure and doped LaTiO3.5-x and SrNbO3.5-x

    International Nuclear Information System (INIS)

    Williams, T.; Lichtenberg, F.; Widmer, D.; Bednorz, J.G.; Reller, A.

    1993-01-01

    The effect of careful control over metal and oxygen stoichiometry on the structures of various M n+1 M' n+1 O 3n+5 phases (M = La and/or Sr, M' = Ti and/or Nb) has been studied by transmission electron microscopy. In addition to the previously reported n = 3 and 4 layered phases and the n = ∞ parent perovskite, ordered and disordered intergrowth structures comprising the n = 2, 3, 4, and ∞ members have been characterized. The effects of in situ reduction in the electron microscope were studied. 18 refs., 8 figs

  15. $\\Xi$ and $\\overline{\\Xi}$ production in 158 GeV/nucleon Pb + Pb collisions

    CERN Document Server

    Appelshauser, H.; Bailey, S.J.; Barna, D.; Barnby, L.S.; Bartke, J.; Barton, R.A.; Bialkowska, H.; Billmeier, A.; Blyth, C.O.; Bock, R.; Bormann, C.; Brady, F.P.; Brockmann, R.; Brun, R.; Buncic, P.; Caines, H.L.; Carr, L.D.; Cebra, D.A.; Cooper, G.E.; Cramer, J.G.; Cristinziani, M.; Csato, P.; Dunn, J.; Eckardt, V.; Eckhardt, F.; Ferguson, M.I.; Fischer, H.G.; Flierl, D.; Fodor, Z.; Foka, P.; Freund, P.; Friese, V.; Fuchs, M.; Gabler, F.; Geist, Walter M.; Gal, J.; Gazdzicki, M.; Gladysz, E.; Grebieszkow, J.; Gunther, J.; Harris, J.W.; Hegyi, S.; Henkel, T.; Hill, L.A.; Hummler, H.; Igo, G.; Irmscher, D.; Jacobs, P.; Jones, P.G.; Kadija, K.; Kolesnikov, V.I.; Konashenok, A.; Kowalski, M.; Lasiuk, B.; Levai, P.; Liu, F.; Malakhov, A.I.; Margetis, S.; Markert, C.; Melkumov, G.L.; Mock, A.; Molnar, J.; Nelson, John M.; Oldenburg, M.; Odyniec, G.; Palla, G.; Panagiotou, A.D.; Petridis, A.; Piper, A.; Porter, R.J.; Poskanzer, Arthur M.; Prindle, D.J.; Puhlhofer, F.; Rauch, W.; Reid, J.G.; Renfordt, R.; Retyk, W.; Ritter, H.G.; Rohrich, D.; Roland, C.; Roland, G.; Rudolph, H.; Rybicki, A.; Sandoval, A.; Sann, H.; Semenov, A.Yu.; Schafer, E.; Schmischke, D.; Schmitz, N.; Schonfelder, S.; Seyboth, P.; Seyerlein, J.; Sikler, F.; Skrzypczak, E.; Snellings, R.; Squier, G.T.A.; Stock, R.; Strobele, H.; Struck, C.; Susa, T.; Szentpetery, I.; Sziklai, J.; Toy, M.; Trainor, T.A.; Trentalange, S.; Ullrich, T.; Vassiliou, M.; Veres, G.; Vesztergombi, G.; Vranic, D.; Wang, F.; Weerasundara, D.D.; Wenig, S.; Whitten, C.; Wienold, T.; Wood, L.; Xu, N.; Yates, T.A.; Zimanyi, J.; Zhu, X.Z.; Zybert, R.

    1998-01-01

    We report measurements of Xi and Xi-bar hyperon absolute yields as a function of rapidity in 158 GeV/c Pb+Pb collisions. At midrapidity, dN/dy = 2.29 +/- 0.12 for Xi, and 0.52 +/- 0.05 for Xi-bar, leading to the ratio of Xi-bar/Xi = 0.23 +/- 0.03. Inverse slope parameters fitted to the measured transverse mass spectra are of the order of 300 MeV near mid-rapidity. The estimated total yield of Xi particles in Pb+Pb central interactions amounts to 7.4 +/- 1.0 per collision. Comparison to Xi production in properly scaled p+p reactions at the same energy reveals a dramatic enhancement (about one order of magnitude) of Xi production in Pb+Pb central collisions over elementary hadron interactions.

  16. Alpha decay property of Pb parent

    International Nuclear Information System (INIS)

    Bai, G.M. Carmel Vigila; Amala, C.; Santhosh Kumar, S.

    2003-01-01

    In this work, the half-lives of alpha decay have been calculated from 182-210 Pb nuclei, both in two sphere approximation and taking care the deformation effects and compared with the available theoretical and experimental data

  17. Calorimetric investigation of Pb-Bi system

    International Nuclear Information System (INIS)

    Agarwal, Renu; Jat, Ram Avtar; Sen, B.K.

    2008-01-01

    Enthalpy increment of Pb 0.71 Bi 0.29 compound was determined using high temperature Calvet calorimeter. The data was fit into the following polynomial equation. ΔH(T-298.15 K) J/mol = -10384.96 + 39.23 T - 0.014T 2 - 18970/T. By precipitation method, the enthalpy of formation of the compound of composition Pb 0.68 Bi 0.32 at 448 K, from Pb(l) and Bi(l) was determined to be -2450± 50 J/mol and from Pb(s) and Bi(s) at 298.15 K was calculated to be 4047 J/mol. (author)

  18. STRATIGRAPHY OF THE PB-1 WELL, NOPAL I URANIUM DEPOSIT, SIERRA PENA BLANCA, CHIHUAHUA, MEXICO

    Energy Technology Data Exchange (ETDEWEB)

    NA

    2005-06-25

    Three wells, PB-1, PB-2, and PB-3, were drilled in 2003 at the Nopal I uranium deposit as part of a natural analogue study to evaluate radionuclide transport processes. The wells penetrate through the Tertiary volcanic section down to the Cretaceous limestone basement, and intersect the top of the regional aquifer system. The PB-1 well, drilled immediately adjacent to the Nopal I ore body, was cored to a depth of 250 m, thus providing an opportunity to document the local stratigraphy. The uppermost unit encountered in the PB-1 well is the Nopal Formation, a densely welded, crystal-rich rhyolitic ash-flow tuff. The cored section is highly altered and devitrified, with kaolinite, quartz, chlorite, and montmorillonite replacing feldspars and much of the groundmass. Breccia zones within the tuff contain fracture fillings of hematite, limonite, and goethite. A zone of intense clay alteration encountered in the depth interval 17.45-22.30 m was interpreted to represent the basal vitrophyre of this unit. Underlying the basal vitrophyre is the Coloradas Formation, which consists of a welded, lithic-rich rhyolitic ash-flow tuff. The cored section of this unit has undergone devitrification and oxidation, and has a similar alteration mineralogy to that observed in the Nopal tuff. The Nopal I ore body is restricted to a brecciated zone that intersects these two volcanic units. A sharp contact between the Coloradas tuff and the underlying Pozos Formation was observed at a depth of 136.38 m. The Pozos Formation in the PB-1 core consists of interbedded, poorly sorted sandstone and conglomerate layers. The conglomeratic clasts consist of subangular to subrounded fragments of volcanic rocks, limestone, and chert. Thin (2-6 m) intervals of intercalated pumiceous tuffs were observed within this unit. The contact between the Pozos Formation and the underlying Cretaceous limestone basement was observed at a depth of 244.4 m.

  19. STRATIGRAPHY OF THE PB-1 WELL, NOPAL I URANIUM DEPOSIT, SIERRA PENA BLANCA, CHIHUAHUA, MEXICO

    International Nuclear Information System (INIS)

    2005-01-01

    Three wells, PB-1, PB-2, and PB-3, were drilled in 2003 at the Nopal I uranium deposit as part of a natural analogue study to evaluate radionuclide transport processes. The wells penetrate through the Tertiary volcanic section down to the Cretaceous limestone basement, and intersect the top of the regional aquifer system. The PB-1 well, drilled immediately adjacent to the Nopal I ore body, was cored to a depth of 250 m, thus providing an opportunity to document the local stratigraphy. The uppermost unit encountered in the PB-1 well is the Nopal Formation, a densely welded, crystal-rich rhyolitic ash-flow tuff. The cored section is highly altered and devitrified, with kaolinite, quartz, chlorite, and montmorillonite replacing feldspars and much of the groundmass. Breccia zones within the tuff contain fracture fillings of hematite, limonite, and goethite. A zone of intense clay alteration encountered in the depth interval 17.45-22.30 m was interpreted to represent the basal vitrophyre of this unit. Underlying the basal vitrophyre is the Coloradas Formation, which consists of a welded, lithic-rich rhyolitic ash-flow tuff. The cored section of this unit has undergone devitrification and oxidation, and has a similar alteration mineralogy to that observed in the Nopal tuff. The Nopal I ore body is restricted to a brecciated zone that intersects these two volcanic units. A sharp contact between the Coloradas tuff and the underlying Pozos Formation was observed at a depth of 136.38 m. The Pozos Formation in the PB-1 core consists of interbedded, poorly sorted sandstone and conglomerate layers. The conglomeratic clasts consist of subangular to subrounded fragments of volcanic rocks, limestone, and chert. Thin (2-6 m) intervals of intercalated pumiceous tuffs were observed within this unit. The contact between the Pozos Formation and the underlying Cretaceous limestone basement was observed at a depth of 244.4 m

  20. ϒ production measurements in pp, p–Pb and Pb–Pb collisions with ALICE

    Energy Technology Data Exchange (ETDEWEB)

    Das, Indranil [Science and Engineering Research Board, Vasant Square, New Delhi-110070 (India); Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata-700064 (India)

    2016-12-15

    The ϒ production measurement provide an important tool to study the color dissociation properties of matter at extreme energy densities, which is measured using the nuclear modification factor in heavy-ion collisions. In the present paper, the measurement of the nuclear modification factor of ϒ is discussed using the data collected in pp, p-Pb and Pb-Pb collisions with ALICE at LHC energies.

  1. Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

    NARCIS (Netherlands)

    Nazeer, H.; Nguyen, Duc Minh; Woldering, L.A.; Abelmann, Leon; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

    2011-01-01

    We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show

  2. Pb isotopes as tracers of mining-related Pb in lichens, seaweed and mussels near a former Pb-Zn mine in West Greenland

    Energy Technology Data Exchange (ETDEWEB)

    Sondergaard, Jens, E-mail: jens@dmu.d [Department of Arctic Environment, National Environmental Research Institute, Aarhus University, Frederiksborgvej 399, DK-4000 Roskilde (Denmark); Asmund, Gert; Johansen, Poul [Department of Arctic Environment, National Environmental Research Institute, Aarhus University, Frederiksborgvej 399, DK-4000 Roskilde (Denmark); Elberling, Bo [Institute of Geography and Geology, University of Copenhagen, Oster Voldgade 10, DK-1350 Copenhagen K (Denmark); University Centre in Svalbard, NO-9171 Longyearbyen (Norway)

    2010-05-15

    Identification of mining-related contaminants is important in order to assess the spreading of contaminants from mining as well as for site remediation purposes. This study focuses on lead (Pb) contamination in biota near the abandoned 'Black Angel Mine' in West Greenland in the period 1988-2008. Stable Pb isotope ratios and total Pb concentrations were determined in lichens, seaweed and mussels as well as in marine sediments. The results show that natural background Pb ({sup 207}Pb/{sup 206}Pb: 0.704-0.767) and Pb originating from the mine ore ({sup 207}Pb/{sup 206}Pb: 0.955) have distinct isotopic fingerprints. Total Pb in lichens, seaweed, and mussels was measured at values up to 633, 19 and 1536 mg kg{sup -1} dry weight, respectively, and is shown to be a mixture of natural Pb and ore-Pb. This enables quantification of mining-related Pb and shows that application of Pb isotope data is a valuable tool for monitoring mining pollution. - Lead isotopes can be used to monitor uptake of mining-related lead in lichens, seaweed and mussels.

  3. 210Pb targets for nuclear spectroscopy

    International Nuclear Information System (INIS)

    Maier, H.J.; Grossmann, R.

    1987-01-01

    The preparation of metallic 210 Pb targets by vacuum evaporation condensation is described. Lead-210, which is highly radioactive, is available as nitrate in 3M HNO 3 . Solid Pb(NO 3 ) 2 is extracted from this solution and subjected to a reductive evaporation procedure. A special-shaped evaporation crucible yields a collection efficiency of 2.8 mg/cm 2 per milligram of employed material. (orig.)

  4. Surface morphology of laser superheated Pb(100)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.H.; Lin, B.; Elsayed-Ali, H.E.

    1999-11-01

    The change in the surface vacancy density after heating of Pb(100) with {approximately}100 ps laser pulses is investigated using reflection high-energy electron diffraction. The surface vacancy density remains unchanged when the surface is superheated without melting. However, when the laser fluence is high enough to cause surface melting, the surface vacancy density increases. This increase in vacancy density is attributed to fast diffusion of atoms in the liquid film formed on Pb(100) during laser melting.

  5. Nuclear magnetic shielding tensors of 207Pb2+ in Pb(NO3)2

    International Nuclear Information System (INIS)

    Lutz, O.; Nolle, A.

    1980-01-01

    The NMR signals of 207 Pb were observed in a single crystal of Pb(NO 3 ) 2 and could be assigned to the four different Pb 2+ sites by the dependence of the linewidths on the orientation. Four different nuclear magnetic shielding tensors with equal principal values but with different characteristic vectors could be determined. The symmetry of the shielding tensors is in agreement with the symmetry at the Pb 2+ sites. It is shown, that intermolecular contributions can not account for the anisotropy of the nuclear magnetic shielding, which is 3 0 / 00 of the isotropic absolute magnetic shielding. (orig.)

  6. Oxidation of Pb-Sn and Pb-Sn-In alloys

    International Nuclear Information System (INIS)

    Sluzewski, D.A.; Chang, Y.A.; Marcotte, V.C.

    1990-01-01

    Air oxidized Pb-Sn and Pb-Sn-In single phase alloys have been studied with scanning Auger microscopy. Line scans across grain boundaries combined with argon ion sputter etching revealed grain boundary oxidation. In the Pb-Sn samples, tin is preferentially oxidized with the grain boundary regions having a much higher percentage of tin oxide than the bulk surface oxide. In the Pb-Sn-In alloys, both tin and indium are preferentially oxidized with the grain boundary regions being enriched with tin and indium oxides

  7. Thermoactivation processes in PbI2:Zr and PbI2 crystals

    International Nuclear Information System (INIS)

    Panasyuk, M.R.; Kapustyanik, V.B.; Tsibul's'kij, V.S.; Dubov, Yu.G.; Pasternak, R.M.

    2007-01-01

    The X-ray luminescence, thermal emission and thermally stimulated depolarisation spectra as well as the influence of IR-illumination on the thermal emission and thermally stimulated depolarisation spectra of the PbI 2 :Zr and PbI 2 crystals have been studied. There were found the hole traps in the PbI 2 :Zr crystals that are absent in PbI 2 . For the observed traps the activation energy has been calculated. The mechanisms describing the traps' nature and that of thermally stimulated depolarisation currents have been proposed

  8. Long-range correlations in PbPb collisions at 158 a *GeV

    CERN Document Server

    Alt, C; Baatar, B; Barna, D; Bartke, J; Betev, L; Bialkowska, H; Blume, C; Boimska, B; Botje, M; Bracinik, J; Bramm, R; Brun, R; Buncic, P; Cerny, V; Christakoglou, P; Chvala, O; Cramer, J G; Csato, P; Darmenov, N; Dimitrov, A; Dinkelaker, P; Eckardt, V; Farantatos, G; Flierl, D; Fodor, Z; Foka, P; Freund, P; Friese, V; Gal, J; Gazdzicki, M; Georgopoulos, G; Gladysz, E; Grebieszkow, K; Hegyi, S; Hohne, C; Kadija, K; Karev, A; Kliemant, M; Kniege, S; Kolesnikov, V I; Kollegger, T; Kornas, E; Korus, R; Kowalski, M; Kraus, I; Kreps, M; van Leeuwen, M; Levai, P; Litov, L; Lungwitz, B; Makariev, M; Malakhov, A I; Mateev, M; Mayes, B W; Melkumov, G L; Meurer, C; Mischke, A; Mitrovski, M; Molnar, J; Mrowczynski, S; Palla, G; Panagiotou, A D; Panayotov, D; Petridis, A; Pikna, M; Pinsky, L; Puhlhofer, F; Renfordt, R; Richard, A; Roland, C; Roland, G; Rybczynski, M; Rybicki, A; Sandoval, A; Schmitz, N; Seyboth, P; Sikler, F; Sitar, B; Skrzypczak, E; Stefanek, G; Stock, R; Strobele, H; Susa, T; Szentpetery, I; Sziklai, J; Trubnikov, V; Varga, D; Vassiliou, M; Veres, G l; Vesztergombi, G; Vranie, D; Wetzler, A; Wlodarczyk, Z; Yoo, l K; Zaranek, J; Zimanyi, J; Feofilov, G; Kolevatov, R; Kondratiev, V; Naumenko, P; Vechernin, V

    2005-01-01

    We present the 1st results of the event-by-event study of long-range correlations between event mean Pt and charged particle multiplicity using NA49 experimental data in two separated rapidity intervals in 158 A *Ge V Pb Pb collisions at the CERN SPS. Noticeable long range correlations are found. The most striking feature is the negative Prn correlation observed for the central PbPb collisions. Results are compared to the predictions of the HIJING event generator and of the String Fusion Model favoring a string fusion hypothesis.

  9. Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

    KAUST Repository

    Baumgardner, William J.

    2011-09-27

    We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

  10. Dielectric and acoustical high frequency characterisation of PZT thin films

    International Nuclear Information System (INIS)

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  11. Dielectric and acoustical high frequency characterisation of PZT thin films

    Science.gov (United States)

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  12. Ordinary and triplet superconducting spin valve effect in Fe/Pb based systems

    Energy Technology Data Exchange (ETDEWEB)

    Leksin, Pavel; Schumann, Joachim; Krupskaya, Yulia; Kataev, Vladislav; Hess, Christian; Schmidt, Oliver; Buechner, Bernd [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Garifyanov, Nadir; Garifullin, Ilgiz [Zavoisky Physical-Technical Institute of RAS, Kazan (Russian Federation); Fominov, Yakov [L. D. Landau Institute for Theoretical Physics of RAS, Moscow (Russian Federation)

    2015-07-01

    We report on experimental evidence for the occurrence of the long range triplet correlations (LRTC) of the superconducting (SC) condensate in the spin-valve heterostructures CoO{sub x}/Fe1/Cu/Fe2/Pb. The LRTC generation in this layer sequence is accompanied by a T{sub c} suppression near the orthogonal mutual orientation of the Fe1 and Fe2 layers' magnetization. This T{sub c} drop reaches its maximum of 60mK at the Fe2 layer thickness d{sub Fe2} = 0.6 nm and falls down when d{sub Fe2} is increased. The modification of the Fe/Pb interface by using a thin Cu layer between Fe and Pb layers reduces the SC transition width without preventing the interaction between Pb and Fe2 layers. The dependence of the SSVE magnitude on Fe1 layer thickness d{sub Fe1} reveals maximum of the effect when d{sub Fe1} and d{sub Fe2} are equal and the d{sub Fe2} value is minimal. Using the optimal d{sub Fe1}, d{sub Fe2} and the intermediate Cu layer we realized almost full switching from normal to SC state due to SSVE.

  13. Levels of /sup 209/Tl and /sup 211/Pb populated in the /sup 210/Pb(t,. cap alpha. )/sup 209/Tl and /sup 210/Pb(t,d)/sup 211/Pb reactions. [J,. pi.

    Energy Technology Data Exchange (ETDEWEB)

    Ellegaard, C; Barnes, P D [Carnegie-Mellon Univ., Pittsburgh, Pa. (USA); Flynn, E R [Los Alamos Scientific Lab., N.Mex. (USA)

    1976-03-22

    The reactions /sup 210/Pb(t,..cap alpha..)/sup 209/Tl and /sup 210/Pb(t,d)/sup 211/Pb have been studied with 20 MeV tritons. Seven levels in /sup 209/Tl have been identified in the /sup 210/Pb(t,..cap alpha..)/sup 209/Tl reaction. Level spins have been suggested by comparing the observed spectrum with that of the corresponding reaction on /sup 208/Pb. Nineteen levels in /sup 211/Pb were identified in the /sup 210/Pb(t,d)/sup 211/Pb reaction. Angular distributions were measured and lsub(n) values and spectroscopic factors were extracted by DWBA calculations. In both cases the spectra are very similar to the spectra obtained with /sup 208/Pb as a target. The deviations from these simple spectra would appear to be amenable to a description in terms of a coupling of the extra particle or hole to the /sup 210/Pb core.

  14. Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

    KAUST Repository

    Fuentes-Fernandez, E. M A; Baldenegro-Pé rez, Leonardo Aurelio; Quevedo-Ló pez, Manuel Angel Quevedo; Gnade, Bruce E.; Hande, Abhiman; Shah, Pradeep; Alshareef, Husam N.

    2011-01-01

    Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer

  15. Controlling Piezoelectric Responses in Pb(Zr0.52Ti0.48)O3 Films through Deposition Conditions and Nanosheet Buffer Layers on Glass

    NARCIS (Netherlands)

    Nguyen, Minh D.; Houwman, Evert P.; Yuan, Huiyu; Wylie- Van Eerd, Benjamin; Dekkers, Matthijn; Koster, Gertjan; Ten Elshof, Johan E.; Rijnders, Guus

    2017-01-01

    Nanosheet Ca2Nb3O10 (CNOns) layers were deposited on ultralow expansion glass substrates by the Langmuir-Blodgett method to obtain preferential (001)-oriented growth of Pb(Zr0.52Ti0.48)O3 (PZT) thin films using pulsed laser deposition (PLD) to enhance the ferroelectric and piezoelectric properties

  16. Molecular Self-Assembly Fabrication and Carrier Dynamics of Stable and Efficient CH3 NH3 Pb(1-x) Snx I3 Perovskite Solar Cells.

    Science.gov (United States)

    Fan, Jiandong; Liu, Chong; Li, Hongliang; Zhang, Cuiling; Li, Wenzhe; Mai, Yaohua

    2017-10-09

    The Sn-based perovskite solar cells (PSCs) provide the possibility of swapping the Pb element toward developing toxic-free PSCs. Here, we innovatively employed a molecular self-assembly approach to obtain a series CH 3 NH 3 Pb (1-x) Sn x I 3 (0≤x≤1) perovskite thin films with full coverage. The optimized planar CH 3 NH 3 Pb 0.75 Sn 0.25 I 3 PSC with inverted structure was consequently realized with a maximum power conversion efficiency (PCE) over 14 %, which displayed a stabilized power output (SPO) over 12 % within 200 s at 0.6 V forward bias. Afterward, we investigated the factors that limited the efficiency improvement of hybrid Sn-Pb PSCs, and analyzed the possible reason of the hysteresis effect occurred even in the inverted structure cell. Particularly, the oxidation of hybrid Sn-Pb perovskite thin film was demonstrated to be the main reason that limited its further efficiency improvement. The imbalance of charge transport was intensified, which was associated with the increased hole defect-state density and decreased electron defect-state density after Sn was introduced. This study helps tackle the intractable issue regarding the toxic Pb in perovskite devices and is a step forward toward realizing lead-free PSCs with high stability and efficiency. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Pseudorapidity and transverse momentum dependence of flow harmonics in pPb and PbPb collisionsDifferential flow harmonics v_n in pPb and PbPb collisions

    CERN Document Server

    Sirunyan, Albert M; CMS Collaboration; Adam, Wolfgang; Ambrogi, Federico; Asilar, Ece; Bergauer, Thomas; Brandstetter, Johannes; Brondolin, Erica; Dragicevic, Marko; Erö, Janos; Flechl, Martin; Friedl, Markus; Fruehwirth, Rudolf; Ghete, Vasile Mihai; Grossmann, Johannes; Krammer, Natascha; Hrubec, Josef; Jeitler, Manfred; König, Axel; Krätschmer, Ilse; Liko, Dietrich; Madlener, Thomas; Mikulec, Ivan; Pree, Elias; Rabady, Dinyar; Rad, Navid; Rohringer, Herbert; Schieck, Jochen; Schöfbeck, Robert; Spanring, Markus; Spitzbart, Daniel; Strauss, Josef; Waltenberger, Wolfgang; Wittmann, Johannes; Wulz, Claudia-Elisabeth; Zarucki, Mateusz; Chekhovsky, Vladimir; Mossolov, Vladimir; Suarez Gonzalez, Juan; De Wolf, Eddi A; Janssen, Xavier; Lauwers, Jasper; Van De Klundert, Merijn; Van Haevermaet, Hans; Van Mechelen, Pierre; Van Remortel, Nick; Van Spilbeeck, Alex; Abu Zeid, Shimaa; Blekman, Freya; D'Hondt, Jorgen; De Bruyn, Isabelle; De Clercq, Jarne; Deroover, Kevin; Flouris, Giannis; Lowette, Steven; Moortgat, Seth; Moreels, Lieselotte; Olbrechts, Annik; Python, Quentin; Skovpen, Kirill; Tavernier, Stefaan; Van Doninck, Walter; Van Mulders, Petra; Van Parijs, Isis; Brun, Hugues; Clerbaux, Barbara; De Lentdecker, Gilles; Delannoy, Hugo; Fasanella, Giuseppe; Favart, Laurent; Goldouzian, Reza; Grebenyuk, Anastasia; Karapostoli, Georgia; Lenzi, Thomas; Luetic, Jelena; Maerschalk, Thierry; Marinov, Andrey; Randle-conde, Aidan; Seva, Tomislav; Vander Velde, Catherine; Vanlaer, Pascal; Vannerom, David; Yonamine, Ryo; Zenoni, Florian; Zhang, Fengwangdong; Cimmino, Anna; Cornelis, Tom; Dobur, Didar; Fagot, Alexis; Gul, Muhammad; Khvastunov, Illia; Poyraz, Deniz; Salva Diblen, Sinem; Tytgat, Michael; Verbeke, Willem; Zaganidis, Nicolas; Bakhshiansohi, Hamed; Bondu, Olivier; Brochet, Sébastien; Bruno, Giacomo; Caudron, Adrien; De Visscher, Simon; Delaere, Christophe; Delcourt, Martin; Francois, Brieuc; Giammanco, Andrea; Jafari, Abideh; Komm, Matthias; Krintiras, Georgios; Lemaitre, Vincent; Magitteri, Alessio; Mertens, Alexandre; Musich, Marco; Piotrzkowski, Krzysztof; Quertenmont, Loic; Vidal Marono, Miguel; Wertz, Sébastien; Beliy, Nikita; Aldá Júnior, Walter Luiz; Alves, Fábio Lúcio; Alves, Gilvan; Brito, Lucas; Hensel, Carsten; Moraes, Arthur; Pol, Maria Elena; Rebello Teles, Patricia; Belchior Batista Das Chagas, Ewerton; Carvalho, Wagner; Chinellato, Jose; Custódio, Analu; Melo Da Costa, Eliza; Da Silveira, Gustavo Gil; De Jesus Damiao, Dilson; Fonseca De Souza, Sandro; Huertas Guativa, Lina Milena; Malbouisson, Helena; Melo De Almeida, Miqueias; Mora Herrera, Clemencia; Mundim, Luiz; Nogima, Helio; Santoro, Alberto; Sznajder, Andre; Tonelli Manganote, Edmilson José; Torres Da Silva De Araujo, Felipe; Vilela Pereira, Antonio; Ahuja, Sudha; Bernardes, Cesar Augusto; Tomei, Thiago; De Moraes Gregores, Eduardo; Mercadante, Pedro G; Moon, Chang-Seong; Novaes, Sergio F; Padula, Sandra; Romero Abad, David; Ruiz Vargas, José Cupertino; Aleksandrov, Aleksandar; Hadjiiska, Roumyana; Iaydjiev, Plamen; Misheva, Milena; Rodozov, Mircho; Stoykova, Stefka; Sultanov, Georgi; Shopova, Mariana; Dimitrov, Anton; Glushkov, Ivan; Litov, Leander; Pavlov, Borislav; Petkov, Peicho; Fang, Wenxing; Gao, Xuyang; Ahmad, Muhammad; Bian, Jian-Guo; Chen, Guo-Ming; Chen, He-Sheng; Chen, Mingshui; Chen, Ye; Jiang, Chun-Hua; Leggat, Duncan; Liu, Zhenan; Romeo, Francesco; Shaheen, Sarmad Masood; Spiezia, Aniello; Tao, Junquan; Wang, Chunjie; Wang, Zheng; Yazgan, Efe; Zhang, Huaqiao; Zhao, Jingzhou; Ban, Yong; Chen, Geng; Li, Qiang; Liu, Shuai; Mao, Yajun; Qian, Si-Jin; Wang, Dayong; Xu, Zijun; Avila, Carlos; Cabrera, Andrés; Chaparro Sierra, Luisa Fernanda; Florez, Carlos; González Hernández, Carlos Felipe; Ruiz Alvarez, José David; Godinovic, Nikola; Lelas, Damir; Puljak, Ivica; Ribeiro Cipriano, Pedro M; Sculac, Toni; Antunovic, Zeljko; Kovac, Marko; Brigljevic, Vuko; Ferencek, Dinko; Kadija, Kreso; Mesic, Benjamin; Susa, Tatjana; Ather, Mohsan Waseem; Attikis, Alexandros; Mavromanolakis, Georgios; Mousa, Jehad; Nicolaou, Charalambos; Ptochos, Fotios; Razis, Panos A; Rykaczewski, Hans; Finger, Miroslav; Finger Jr, Michael; Carrera Jarrin, Edgar; Abdelalim, Ahmed Ali; Mahmoud, Mohammed; Mahrous, Ayman; Dewanjee, Ram Krishna; Kadastik, Mario; Perrini, Lucia; Raidal, Martti; Tiko, Andres; Veelken, Christian; Eerola, Paula; Pekkanen, Juska; Voutilainen, Mikko; Härkönen, Jaakko; Jarvinen, Terhi; Karimäki, Veikko; Kinnunen, Ritva; Lampén, Tapio; Lassila-Perini, Kati; Lehti, Sami; Lindén, Tomas; Luukka, Panja-Riina; Tuominen, Eija; Tuominiemi, Jorma; Tuovinen, Esa; Talvitie, Joonas; Tuuva, Tuure; Besancon, Marc; Couderc, Fabrice; Dejardin, Marc; Denegri, Daniel; Faure, Jean-Louis; Ferri, Federico; Ganjour, Serguei; Ghosh, Saranya; Givernaud, Alain; Gras, Philippe; Hamel de Monchenault, Gautier; Jarry, Patrick; Kucher, Inna; Locci, Elizabeth; Machet, Martina; Malcles, Julie; Rander, John; Rosowsky, André; Sahin, Mehmet Özgür; Titov, Maksym; Abdulsalam, Abdulla; Antropov, Iurii; Baffioni, Stephanie; Beaudette, Florian; Busson, Philippe; Cadamuro, Luca; Charlot, Claude; Davignon, Olivier; Granier de Cassagnac, Raphael; Jo, Mihee; Lisniak, Stanislav; Lobanov, Artur; Nguyen, Matthew; Ochando, Christophe; Ortona, Giacomo; Paganini, Pascal; Pigard, Philipp; Regnard, Simon; Salerno, Roberto; Sirois, Yves; Stahl Leiton, Andre Govinda; Strebler, Thomas; Yilmaz, Yetkin; Zabi, Alexandre; Zghiche, Amina; Agram, Jean-Laurent; Andrea, Jeremy; Bloch, Daniel; Brom, Jean-Marie; Buttignol, Michael; Chabert, Eric Christian; Chanon, Nicolas; Collard, Caroline; Conte, Eric; Coubez, Xavier; Fontaine, Jean-Charles; Gelé, Denis; Goerlach, Ulrich; Le Bihan, Anne-Catherine; Van Hove, Pierre; Gadrat, Sébastien; Beauceron, Stephanie; Bernet, Colin; Boudoul, Gaelle; Chierici, Roberto; Contardo, Didier; Courbon, Benoit; Depasse, Pierre; El Mamouni, Houmani; Fay, Jean; Finco, Linda; Gascon, Susan; Gouzevitch, Maxime; Grenier, Gérald; Ille, Bernard; Lagarde, Francois; Laktineh, Imad Baptiste; Lethuillier, Morgan; Mirabito, Laurent; Pequegnot, Anne-Laure; Perries, Stephane; Popov, Andrey; Sordini, Viola; Vander Donckt, Muriel; Viret, Sébastien; Toriashvili, Tengizi; Tsamalaidze, Zviad; Autermann, Christian; Beranek, Sarah; Feld, Lutz; Kiesel, Maximilian Knut; Klein, Katja; Lipinski, Martin; Preuten, Marius; Schomakers, Christian; Schulz, Johannes; Verlage, Tobias; Albert, Andreas; Brodski, Michael; Dietz-Laursonn, Erik; Duchardt, Deborah; Endres, Matthias; Erdmann, Martin; Erdweg, Sören; Esch, Thomas; Fischer, Robert; Güth, Andreas; Hamer, Matthias; Hebbeker, Thomas; Heidemann, Carsten; Hoepfner, Kerstin; Knutzen, Simon; Merschmeyer, Markus; Meyer, Arnd; Millet, Philipp; Mukherjee, Swagata; Olschewski, Mark; Padeken, Klaas; Pook, Tobias; Radziej, Markus; Reithler, Hans; Rieger, Marcel; Scheuch, Florian; Sonnenschein, Lars; Teyssier, Daniel; Thüer, Sebastian; Flügge, Günter; Kargoll, Bastian; Kress, Thomas; Künsken, Andreas; Lingemann, Joschka; Müller, Thomas; Nehrkorn, Alexander; Nowack, Andreas; Pistone, Claudia; Pooth, Oliver; Stahl, Achim; Aldaya Martin, Maria; Arndt, Till; Asawatangtrakuldee, Chayanit; Beernaert, Kelly; Behnke, Olaf; Behrens, Ulf; Bin Anuar, Afiq Aizuddin; Borras, Kerstin; Botta, Valeria; Campbell, Alan; Connor, Patrick; Contreras-Campana, Christian; Costanza, Francesco; Diez Pardos, Carmen; Eckerlin, Guenter; Eckstein, Doris; Eichhorn, Thomas; Eren, Engin; Gallo, Elisabetta; Garay Garcia, Jasone; Geiser, Achim; Gizhko, Andrii; Grados Luyando, Juan Manuel; Grohsjean, Alexander; Gunnellini, Paolo; Harb, Ali; Hauk, Johannes; Hempel, Maria; Jung, Hannes; Kalogeropoulos, Alexis; Kasemann, Matthias; Keaveney, James; Kleinwort, Claus; Korol, Ievgen; Krücker, Dirk; Lange, Wolfgang; Lelek, Aleksandra; Lenz, Teresa; Leonard, Jessica; Lipka, Katerina; Lohmann, Wolfgang; Mankel, Rainer; Melzer-Pellmann, Isabell-Alissandra; Meyer, Andreas Bernhard; Mittag, Gregor; Mnich, Joachim; Mussgiller, Andreas; Ntomari, Eleni; Pitzl, Daniel; Placakyte, Ringaile; Raspereza, Alexei; Roland, Benoit; Savitskyi, Mykola; Saxena, Pooja; Shevchenko, Rostyslav; Spannagel, Simon; Stefaniuk, Nazar; Van Onsem, Gerrit Patrick; Walsh, Roberval; Wen, Yiwen; Wichmann, Katarzyna; Wissing, Christoph; Zenaiev, Oleksandr; Bein, Samuel; Blobel, Volker; Centis Vignali, Matteo; Draeger, Arne-Rasmus; Dreyer, Torben; Garutti, Erika; Gonzalez, Daniel; Haller, Johannes; Hoffmann, Malte; Junkes, Alexandra; Klanner, Robert; Kogler, Roman; Kovalchuk, Nataliia; Kurz, Simon; Lapsien, Tobias; Marchesini, Ivan; Marconi, Daniele; Meyer, Mareike; Niedziela, Marek; Nowatschin, Dominik; Pantaleo, Felice; Peiffer, Thomas; Perieanu, Adrian; Scharf, Christian; Schleper, Peter; Schmidt, Alexander; Schumann, Svenja; Schwandt, Joern; Sonneveld, Jory; Stadie, Hartmut; Steinbrück, Georg; Stober, Fred-Markus Helmut; Stöver, Marc; Tholen, Heiner; Troendle, Daniel; Usai, Emanuele; Vanelderen, Lukas; Vanhoefer, Annika; Vormwald, Benedikt; Akbiyik, Melike; Barth, Christian; Baur, Sebastian; Baus, Colin; Berger, Joram; Butz, Erik; Caspart, René; Chwalek, Thorsten; Colombo, Fabio; De Boer, Wim; Dierlamm, Alexander; Freund, Benedikt; Friese, Raphael; Giffels, Manuel; Gilbert, Andrew; Haitz, Dominik; Hartmann, Frank; Heindl, Stefan Michael; Husemann, Ulrich; Kassel, Florian; Kudella, Simon; Mildner, Hannes; Mozer, Matthias Ulrich; Müller, Thomas; Plagge, Michael; Quast, Gunter; Rabbertz, Klaus; Schröder, Matthias; Shvetsov, Ivan; Sieber, Georg; Simonis, Hans-Jürgen; Ulrich, Ralf; Wayand, Stefan; Weber, Marc; Weiler, Thomas; Williamson, Shawn; Wöhrmann, Clemens; Wolf, Roger; Anagnostou, Georgios; Daskalakis, Georgios; Geralis, Theodoros; Giakoumopoulou, Viktoria Athina; Kyriakis, Aristotelis; Loukas, Demetrios; Topsis-Giotis, Iasonas; Kesisoglou, Stilianos; Panagiotou, Apostolos; Saoulidou, Niki; Evangelou, Ioannis; Foudas, Costas; Kokkas, Panagiotis; Manthos, Nikolaos; Papadopoulos, Ioannis; Paradas, Evangelos; Strologas, John; Triantis, Frixos A; Csanad, Mate; Filipovic, Nicolas; Pasztor, Gabriella; Bencze, Gyorgy; Hajdu, Csaba; Horvath, Dezso; Sikler, Ferenc; Veszpremi, Viktor; Vesztergombi, Gyorgy; Zsigmond, Anna Julia; Beni, Noemi; Czellar, Sandor; Karancsi, János; Makovec, Alajos; Molnar, Jozsef; Szillasi, Zoltan; Bartók, Márton; Raics, Peter; Trocsanyi, Zoltan Laszlo; Ujvari, Balazs; Choudhury, Somnath; Komaragiri, Jyothsna Rani; Bahinipati, Seema; Bhowmik, Sandeep; Mal, Prolay; Mandal, Koushik; Nayak, Aruna; Sahoo, Deepak Kumar; Sahoo, Niladribihari; Swain, Sanjay Kumar; Bansal, Sunil; Beri, Suman Bala; Bhatnagar, Vipin; Bhawandeep, Bhawandeep; Chawla, Ridhi; Dhingra, Nitish; Kalsi, Amandeep Kaur; Kaur, Anterpreet; Kaur, Manjit; Kumar, Ramandeep; Kumari, Priyanka; Mehta, Ankita; Mittal, Monika; Singh, Jasbir; Walia, Genius; Kumar, Ashok; Shah, Aashaq; Bhardwaj, Ashutosh; Chauhan, Sushil; Choudhary, Brajesh C; Garg, Rocky Bala; Keshri, Sumit; Kumar, Ajay; Malhotra, Shivali; Naimuddin, Md; Ranjan, Kirti; Sharma, Ramkrishna; Sharma, Varun; Bhardwaj, Rishika; Bhattacharya, Rajarshi; Bhattacharya, Satyaki; Dey, Sourav; Dutt, Suneel; Dutta, Suchandra; Ghosh, Shamik; Majumdar, Nayana; Modak, Atanu; Mondal, Kuntal; Mukhopadhyay, Supratik; Nandan, Saswati; Purohit, Arnab; Roy, Ashim; Roy, Debarati; Roy Chowdhury, Suvankar; Sarkar, Subir; Sharan, Manoj; Thakur, Shalini; Behera, Prafulla Kumar; Chudasama, Ruchi; Dutta, Dipanwita; Jha, Vishwajeet; Kumar, Vineet; Mohanty, Ajit Kumar; Netrakanti, Pawan Kumar; Pant, Lalit Mohan; Shukla, Prashant; Topkar, Anita; Aziz, Tariq; Dugad, Shashikant; Mahakud, Bibhuprasad; Mitra, Soureek; Mohanty, Gagan Bihari; Parida, Bibhuti; Sur, Nairit; Sutar, Bajrang; Banerjee, Sudeshna; Bhattacharya, Soham; Chatterjee, Suman; Das, Pallabi; Guchait, Monoranjan; Jain, Sandhya; Kumar, Sanjeev; Maity, Manas; Majumder, Gobinda; Mazumdar, Kajari; Sarkar, Tanmay; Wickramage, Nadeesha; Chauhan, Shubhanshu; Dube, Sourabh; Hegde, Vinay; Kapoor, Anshul; Kothekar, Kunal; Pandey, Shubham; Rane, Aditee; Sharma, Seema; Chenarani, Shirin; Eskandari Tadavani, Esmaeel; Etesami, Seyed Mohsen; Khakzad, Mohsen; Mohammadi Najafabadi, Mojtaba; Naseri, Mohsen; Paktinat Mehdiabadi, Saeid; Rezaei Hosseinabadi, Ferdos; Safarzadeh, Batool; Zeinali, Maryam; Felcini, Marta; Grunewald, Martin; Abbrescia, Marcello; Calabria, Cesare; Caputo, Claudio; Colaleo, Anna; Creanza, Donato; Cristella, Leonardo; De Filippis, Nicola; De Palma, Mauro; Fiore, Luigi; Iaselli, Giuseppe; Maggi, Giorgio; Maggi, Marcello; Miniello, Giorgia; My, Salvatore; Nuzzo, Salvatore; Pompili, Alexis; Pugliese, Gabriella; Radogna, Raffaella; Ranieri, Antonio; Selvaggi, Giovanna; Sharma, Archana; Silvestris, Lucia; Venditti, Rosamaria; Verwilligen, Piet; Abbiendi, Giovanni; Battilana, Carlo; Bonacorsi, Daniele; Braibant-Giacomelli, Sylvie; Brigliadori, Luca; Campanini, Renato; Capiluppi, Paolo; Castro, Andrea; Cavallo, Francesca Romana; Chhibra, Simranjit Singh; Codispoti, Giuseppe; Cuffiani, Marco; Dallavalle, Gaetano-Marco; Fabbri, Fabrizio; Fanfani, Alessandra; Fasanella, Daniele; Giacomelli, Paolo; Guiducci, Luigi; Marcellini, Stefano; Masetti, Gianni; Navarria, Francesco; Perrotta, Andrea; Rossi, Antonio; Rovelli, Tiziano; Siroli, Gian Piero; Tosi, Nicolò; Albergo, Sebastiano; Costa, Salvatore; Di Mattia, Alessandro; Giordano, Ferdinando; Potenza, Renato; Tricomi, Alessia; Tuve, Cristina; Barbagli, Giuseppe; Chatterjee, Kalyanmoy; Ciulli, Vitaliano; Civinini, Carlo; D'Alessandro, Raffaello; Focardi, Ettore; Lenzi, Piergiulio; Meschini, Marco; Paoletti, Simone; Russo, Lorenzo; Sguazzoni, Giacomo; Strom, Derek; Viliani, Lorenzo; Benussi, Luigi; Bianco, Stefano; Fabbri, Franco; Piccolo, Davide; Primavera, Federica; Calvelli, Valerio; Ferro, Fabrizio; Robutti, Enrico; Tosi, Silvano; Brianza, Luca; Brivio, Francesco; Ciriolo, Vincenzo; Dinardo, Mauro Emanuele; Fiorendi, Sara; Gennai, Simone; Ghezzi, Alessio; Govoni, Pietro; Malberti, Martina; Malvezzi, Sandra; Manzoni, Riccardo Andrea; Menasce, Dario; Moroni, Luigi; Paganoni, Marco; Pauwels, Kristof; Pedrini, Daniele; Pigazzini, Simone; Ragazzi, Stefano; Tabarelli de Fatis, Tommaso; Buontempo, Salvatore; Cavallo, Nicola; Di Guida, Salvatore; Fabozzi, Francesco; Fienga, Francesco; Iorio, Alberto Orso Maria; Khan, Wajid Ali; Lista, Luca; Meola, Sabino; Paolucci, Pierluigi; Sciacca, Crisostomo; Thyssen, Filip; Azzi, Patrizia; Bacchetta, Nicola; Benato, Lisa; Bisello, Dario; Boletti, Alessio; Carlin, Roberto; Checchia, Paolo; Dall'Osso, Martino; Dorigo, Tommaso; Dosselli, Umberto; Gasparini, Fabrizio; Gasparini, Ugo; Gozzelino, Andrea; Gulmini, Michele; Lacaprara, Stefano; Margoni, Martino; Maron, Gaetano; Meneguzzo, Anna Teresa; Pozzobon, Nicola; Ronchese, Paolo; Rossin, Roberto; Torassa, Ezio; Ventura, Sandro; Zanetti, Marco; Zotto, Pierluigi; Zumerle, Gianni; Braghieri, Alessandro; Fallavollita, Francesco; Magnani, Alice; Montagna, Paolo; Ratti, Sergio P; Re, Valerio; Ressegotti, Martina; Riccardi, Cristina; Salvini, Paola; Vai, Ilaria; Vitulo, Paolo; Alunni Solestizi, Luisa; Bilei, Gian Mario; Ciangottini, Diego; Fanò, Livio; Lariccia, Paolo; Leonardi, Roberto; Mantovani, Giancarlo; Mariani, Valentina; Menichelli, Mauro; Saha, Anirban; Santocchia, Attilio; Spiga, Daniele; Androsov, Konstantin; Azzurri, Paolo; Bagliesi, Giuseppe; Bernardini, Jacopo; Boccali, Tommaso; Borrello, Laura; Castaldi, Rino; Ciocci, Maria Agnese; Dell'Orso, Roberto; Fedi, Giacomo; Giassi, Alessandro; Grippo, Maria Teresa; Ligabue, Franco; Lomtadze, Teimuraz; Martini, Luca; Messineo, Alberto; Palla, Fabrizio; Rizzi, Andrea; Savoy-Navarro, Aurore; Spagnolo, Paolo; Tenchini, Roberto; Tonelli, Guido; Venturi, Andrea; Verdini, Piero Giorgio; Barone, Luciano; Cavallari, Francesca; Cipriani, Marco; Daci, Nadir; Del Re, Daniele; Diemoz, Marcella; Gelli, Simone; Longo, Egidio; Margaroli, Fabrizio; Marzocchi, Badder; Meridiani, Paolo; Organtini, Giovanni; Paramatti, Riccardo; Preiato, Federico; Rahatlou, Shahram; Rovelli, Chiara; Santanastasio, Francesco; Amapane, Nicola; Arcidiacono, Roberta; Argiro, Stefano; Arneodo, Michele; Bartosik, Nazar; Bellan, Riccardo; Biino, Cristina; Cartiglia, Nicolo; Cenna, Francesca; Costa, Marco; Covarelli, Roberto; Degano, Alessandro; Demaria, Natale; Kiani, Bilal; Mariotti, Chiara; Maselli, Silvia; Migliore, Ernesto; Monaco, Vincenzo; Monteil, Ennio; Monteno, Marco; Obertino, Maria Margherita; Pacher, Luca; Pastrone, Nadia; Pelliccioni, Mario; Pinna Angioni, Gian Luca; Ravera, Fabio; Romero, Alessandra; Ruspa, Marta; Sacchi, Roberto; Shchelina, Ksenia; Sola, Valentina; Solano, Ada; Staiano, Amedeo; Traczyk, Piotr; Belforte, Stefano; Casarsa, Massimo; Cossutti, Fabio; Della Ricca, Giuseppe; Zanetti, Anna; Kim, Dong Hee; Kim, Gui Nyun; Kim, Min Suk; Lee, Jeongeun; Lee, Sangeun; Lee, Seh Wook; Oh, Young Do; Sekmen, Sezen; Son, Dong-Chul; Yang, Yu Chul; Lee, Ari; Kim, Hyunchul; Moon, Dong Ho; Oh, Geonhee; Brochero Cifuentes, Javier Andres; Goh, Junghwan; Kim, Tae Jeong; Cho, Sungwoong; Choi, Suyong; Go, Yeonju; Gyun, Dooyeon; Ha, Seungkyu; Hong, Byung-Sik; Jo, Youngkwon; Kim, Yongsun; Lee, Kisoo; Lee, Kyong Sei; Lee, Songkyo; Lim, Jaehoon; Park, Sung Keun; Roh, Youn; Almond, John; Kim, Junho; Kim, Jae Sung; Lee, Haneol; Lee, Kyeongpil; Nam, Kyungwook; Oh, Sung Bin; Radburn-Smith, Benjamin Charles; Seo, Seon-hee; Yang, Unki; Yoo, Hwi Dong; Yu, Geum Bong; Choi, Minkyoo; Kim, Hyunyong; Kim, Ji Hyun; Lee, Jason Sang Hun; Park, Inkyu; Ryu, Geonmo; Choi, Young-Il; Hwang, Chanwook; Lee, Jongseok; Yu, Intae; Dudenas, Vytautas; Juodagalvis, Andrius; Vaitkus, Juozas; Ahmed, Ijaz; Ibrahim, Zainol Abidin; Md Ali, Mohd Adli Bin; Mohamad Idris, Faridah; Wan Abdullah, Wan Ahmad Tajuddin; Yusli, Mohd Nizam; Zolkapli, Zukhaimira; Castilla-Valdez, Heriberto; De La Cruz-Burelo, Eduard; Heredia-De La Cruz, Ivan; Lopez-Fernandez, Ricardo; Mejia Guisao, Jhovanny; Sánchez Hernández, Alberto; Carrillo Moreno, Salvador; Oropeza Barrera, Cristina; Vazquez Valencia, Fabiola; Pedraza, Isabel; Salazar Ibarguen, Humberto Antonio; Uribe Estrada, Cecilia; Morelos Pineda, Antonio; Krofcheck, David; Butler, Philip H; Ahmad, Ashfaq; Ahmad, Muhammad; Hassan, Qamar; Hoorani, Hafeez R; Saddique, Asif; Shah, Mehar Ali; Shoaib, Muhammad; Waqas, Muhammad; Bialkowska, Helena; Bluj, Michal; Boimska, Bozena; Frueboes, Tomasz; Górski, Maciej; Kazana, Malgorzata; Nawrocki, Krzysztof; Romanowska-Rybinska, Katarzyna; Szleper, Michal; Zalewski, Piotr; Bunkowski, Karol; Byszuk, Adrian; Doroba, Krzysztof; Kalinowski, Artur; Konecki, Marcin; Krolikowski, Jan; Misiura, Maciej; Olszewski, Michal; Pyskir, Andrzej; Walczak, Marek; Bargassa, Pedrame; Beirão Da Cruz E Silva, Cristóvão; Calpas, Betty; Di Francesco, Agostino; Faccioli, Pietro; Gallinaro, Michele; Hollar, Jonathan; Leonardo, Nuno; Lloret Iglesias, Lara; Nemallapudi, Mythra Varun; Seixas, Joao; Toldaiev, Oleksii; Vadruccio, Daniele; Varela, Joao; Afanasiev, Serguei; Bunin, Pavel; Gavrilenko, Mikhail; Golutvin, Igor; Gorbunov, Ilya; Kamenev, Alexey; Karjavin, Vladimir; Lanev, Alexander; Malakhov, Alexander; Matveev, Viktor; Palichik, Vladimir; Perelygin, Victor; Shmatov, Sergey; Shulha, Siarhei; Skatchkov, Nikolai; Smirnov, Vitaly; Voytishin, Nikolay; Zarubin, Anatoli; Ivanov, Yury; Kim, Victor; Kuznetsova, Ekaterina; Levchenko, Petr; Murzin, Victor; Oreshkin, Vadim; Smirnov, Igor; Sulimov, Valentin; Uvarov, Lev; Vavilov, Sergey; Vorobyev, Alexey; Andreev, Yuri; Dermenev, Alexander; Gninenko, Sergei; Golubev, Nikolai; Karneyeu, Anton; Kirsanov, Mikhail; Krasnikov, Nikolai; Pashenkov, Anatoli; Tlisov, Danila; Toropin, Alexander; Epshteyn, Vladimir; Gavrilov, Vladimir; Lychkovskaya, Natalia; Popov, Vladimir; Pozdnyakov, Ivan; Safronov, Grigory; Spiridonov, Alexander; Stepennov, Anton; Toms, Maria; Vlasov, Evgueni; Zhokin, Alexander; Aushev, Tagir; Bylinkin, Alexander; Chistov, Ruslan; Philippov, Dmitry; Polikarpov, Sergey; Andreev, Vladimir; Azarkin, Maksim; Dremin, Igor; Kirakosyan, Martin; Terkulov, Adel; Baskakov, Alexey; Belyaev, Andrey; Boos, Edouard; Ershov, Alexander; Gribushin, Andrey; Kaminskiy, Alexandre; Kodolova, Olga; Korotkikh, Vladimir; Lokhtin, Igor; Miagkov, Igor; Obraztsov, Stepan; Petrushanko, Sergey; Savrin, Viktor; Snigirev, Alexander; Vardanyan, Irina; Blinov, Vladimir; Skovpen, Yuri; Shtol, Dmitry; Azhgirey, Igor; Bayshev, Igor; Bitioukov, Sergei; Elumakhov, Dmitry; Kachanov, Vassili; Kalinin, Alexey; Konstantinov, Dmitri; Krychkine, Victor; Petrov, Vladimir; Ryutin, Roman; Sobol, Andrei; Troshin, Sergey; Tyurin, Nikolay; Uzunian, Andrey; Volkov, Alexey; Adzic, Petar; Cirkovic, Predrag; Devetak, Damir; Dordevic, Milos; Milosevic, Jovan; Rekovic, Vladimir; Alcaraz Maestre, Juan; Barrio Luna, Mar; Cerrada, Marcos; Colino, Nicanor; De La Cruz, Begona; Delgado Peris, Antonio; Escalante Del Valle, Alberto; Fernandez Bedoya, Cristina; Fernández Ramos, Juan Pablo; Flix, Jose; Fouz, Maria Cruz; Garcia-Abia, Pablo; Gonzalez Lopez, Oscar; Goy Lopez, Silvia; Hernandez, Jose M; Josa, Maria Isabel; Pérez-Calero Yzquierdo, Antonio María; Puerta Pelayo, Jesus; Quintario Olmeda, Adrián; Redondo, Ignacio; Romero, Luciano; Senghi Soares, Mara; Álvarez Fernández, Adrian; Albajar, Carmen; de Trocóniz, Jorge F; Missiroli, Marino; Moran, Dermot; Cuevas, Javier; Erice, Carlos; Fernandez Menendez, Javier; Gonzalez Caballero, Isidro; González Fernández, Juan Rodrigo; Palencia Cortezon, Enrique; Sanchez Cruz, Sergio; Suárez Andrés, Ignacio; Vischia, Pietro; Vizan Garcia, Jesus Manuel; Cabrillo, Iban Jose; Calderon, Alicia; Chazin Quero, Barbara; Curras, Esteban; Fernandez, Marcos; Garcia-Ferrero, Juan; Gomez, Gervasio; Lopez Virto, Amparo; Marco, Jesus; Martinez Rivero, Celso; Martinez Ruiz del Arbol, Pablo; Matorras, Francisco; Piedra Gomez, Jonatan; Rodrigo, Teresa; Ruiz-Jimeno, Alberto; Scodellaro, Luca; Trevisani, Nicolò; Vila, Ivan; Vilar Cortabitarte, Rocio; Abbaneo, Duccio; Auffray, Etiennette; Baillon, Paul; Ball, Austin; Barney, David; Bianco, Michele; Bloch, Philippe; Bocci, Andrea; Botta, Cristina; Camporesi, Tiziano; Castello, Roberto; Cepeda, Maria; Cerminara, Gianluca; Chapon, Emilien; Chen, Yi; D'Enterria, David; Dabrowski, Anne; Daponte, Vincenzo; David Tinoco Mendes, Andre; De Gruttola, Michele; De Roeck, Albert; Di Marco, Emanuele; Dobson, Marc; Dorney, Brian; Du Pree, Tristan; Dünser, Marc; Dupont, Niels; Elliott-Peisert, Anna; Everaerts, Pieter; Franzoni, Giovanni; Fulcher, Jonathan; Funk, Wolfgang; Gigi, Dominique; Gill, Karl; Glege, Frank; Gulhan, Doga; Gundacker, Stefan; Guthoff, Moritz; Harris, Philip; Hegeman, Jeroen; Innocente, Vincenzo; Janot, Patrick; Karacheban, Olena; Kieseler, Jan; Kirschenmann, Henning; Knünz, Valentin; Kornmayer, Andreas; Kortelainen, Matti J; Krammer, Manfred; Lange, Clemens; Lecoq, Paul; Lourenco, Carlos; Lucchini, Marco Toliman; Malgeri, Luca; Mannelli, Marcello; Martelli, Arabella; Meijers, Frans; Merlin, Jeremie Alexandre; Mersi, Stefano; Meschi, Emilio; Milenovic, Predrag; Moortgat, Filip; Mulders, Martijn; Neugebauer, Hannes; Orfanelli, Styliani; Orsini, Luciano; Pape, Luc; Perez, Emmanuel; Peruzzi, Marco; Petrilli, Achille; Petrucciani, Giovanni; Pfeiffer, Andreas; Pierini, Maurizio; Racz, Attila; Reis, Thomas; Rolandi, Gigi; Rovere, Marco; Sakulin, Hannes; Sauvan, Jean-Baptiste; Schäfer, Christoph; Schwick, Christoph; Seidel, Markus; Selvaggi, Michele; Sharma, Archana; Silva, Pedro; Sphicas, Paraskevas; Steggemann, Jan; Stoye, Markus; Tosi, Mia; Treille, Daniel; Triossi, Andrea; Tsirou, Andromachi; Veckalns, Viesturs; Veres, Gabor Istvan; Verweij, Marta; Wardle, Nicholas; Zeuner, Wolfram Dietrich; Bertl, Willi; Deiters, Konrad; Erdmann, Wolfram; Horisberger, Roland; Ingram, Quentin; Kaestli, Hans-Christian; Kotlinski, Danek; Langenegger, Urs; Rohe, Tilman; Wiederkehr, Stephan Albert; Bachmair, Felix; Bäni, Lukas; Berger, Pirmin; Bianchini, Lorenzo; Casal, Bruno; Dissertori, Günther; Dittmar, Michael; Donegà, Mauro; Grab, Christoph; Heidegger, Constantin; Hits, Dmitry; Hoss, Jan; Kasieczka, Gregor; Klijnsma, Thomas; Lustermann, Werner; Mangano, Boris; Marionneau, Matthieu; Meinhard, Maren Tabea; Meister, Daniel; Micheli, Francesco; Musella, Pasquale; Nessi-Tedaldi, Francesca; Pandolfi, Francesco; Pata, Joosep; Pauss, Felicitas; Perrin, Gaël; Perrozzi, Luca; Quittnat, Milena; Rossini, Marco; Schönenberger, Myriam; Shchutska, Lesya; Starodumov, Andrei; Tavolaro, Vittorio Raoul; Theofilatos, Konstantinos; Vesterbacka Olsson, Minna Leonora; Wallny, Rainer; Zagozdzinska, Agnieszka; Zhu, De Hua; Aarrestad, Thea Klaeboe; Amsler, Claude; Caminada, Lea; Canelli, Maria Florencia; De Cosa, Annapaola; Donato, Silvio; Galloni, Camilla; Hinzmann, Andreas; Hreus, Tomas; Kilminster, Benjamin; Ngadiuba, Jennifer; Pinna, Deborah; Rauco, Giorgia; Robmann, Peter; Salerno, Daniel; Seitz, Claudia; Zucchetta, Alberto; Candelise, Vieri; Doan, Thi Hien; Jain, Shilpi; Khurana, Raman; Konyushikhin, Maxim; Kuo, Chia-Ming; Lin, Willis; Pozdnyakov, Andrey; Yu, Shin-Shan; Kumar, Arun; Chang, Paoti; Chao, Yuan; Chen, Kai-Feng; Chen, Po-Hsun; Fiori, Francesco; Hou, George Wei-Shu; Hsiung, Yee; Liu, Yueh-Feng; Lu, Rong-Shyang; Miñano Moya, Mercedes; Paganis, Efstathios; Psallidas, Andreas; Tsai, Jui-fa; Asavapibhop, Burin; Kovitanggoon, Kittikul; Singh, Gurpreet; Srimanobhas, Norraphat; Adiguzel, Aytul; Bakirci, Mustafa Numan; Boran, Fatma; Damarseckin, Serdal; Demiroglu, Zuhal Seyma; Dozen, Candan; Eskut, Eda; Girgis, Semiray; Gokbulut, Gul; Guler, Yalcin; Hos, Ilknur; Kangal, Evrim Ersin; Kara, Ozgun; Kiminsu, Ugur; Oglakci, Mehmet; Onengut, Gulsen; Ozdemir, Kadri; Ozturk, Sertac; Polatoz, Ayse; Sunar Cerci, Deniz; Turkcapar, Semra; Zorbakir, Ibrahim Soner; Zorbilmez, Caglar; Bilin, Bugra; Karapinar, Guler; Ocalan, Kadir; Yalvac, Metin; Zeyrek, Mehmet; Gülmez, Erhan; Kaya, Mithat; Kaya, Ozlem; Tekten, Sevgi; Yetkin, Elif Asli; Nazlim Agaras, Merve; Atay, Serhat; Cakir, Altan; Cankocak, Kerem; Grynyov, Boris; Levchuk, Leonid; Sorokin, Pavel; Aggleton, Robin; Ball, Fionn; Beck, Lana; Brooke, James John; Burns, Douglas; Clement, Emyr; Cussans, David; Flacher, Henning; Goldstein, Joel; Grimes, Mark; Heath, Greg P; Heath, Helen F; Jacob, Jeson; Kreczko, Lukasz; Lucas, Chris; Newbold, Dave M; Paramesvaran, Sudarshan; Poll, Anthony; Sakuma, Tai; Seif El Nasr-storey, Sarah; Smith, Dominic; Smith, Vincent J; Belyaev, Alexander; Brew, Christopher; Brown, Robert M; Calligaris, Luigi; Cieri, Davide; Cockerill, David JA; Coughlan, John A; Harder, Kristian; Harper, Sam; Olaiya, Emmanuel; Petyt, David; Shepherd-Themistocleous, Claire; Thea, Alessandro; Tomalin, Ian R; Williams, Thomas; Baber, Mark; Bainbridge, Robert; Breeze, Shane; Buchmuller, Oliver; Bundock, Aaron; Casasso, Stefano; Citron, Matthew; Colling, David; Corpe, Louie; Dauncey, Paul; Davies, Gavin; De Wit, Adinda; Della Negra, Michel; Di Maria, Riccardo; Dunne, Patrick; Elwood, Adam; Futyan, David; Haddad, Yacine; Hall, Geoffrey; Iles, Gregory; James, Thomas; Lane, Rebecca; Laner, Christian; Lyons, Louis; Magnan, Anne-Marie; Malik, Sarah; Mastrolorenzo, Luca; Matsushita, Takashi; Nash, Jordan; Nikitenko, Alexander; Pela, Joao; Pesaresi, Mark; Raymond, David Mark; Richards, Alexander; Rose, Andrew; Scott, Edward; Seez, Christopher; Shtipliyski, Antoni; Summers, Sioni; Tapper, Alexander; Uchida, Kirika; Vazquez Acosta, Monica; Virdee, Tejinder; Winterbottom, Daniel; Wright, Jack; Zenz, Seth Conrad; Cole, Joanne; Hobson, Peter R; Khan, Akram; Kyberd, Paul; Reid, Ivan; Symonds, Philip; Teodorescu, Liliana; Turner, Mark; Borzou, Ahmad; Call, Kenneth; Dittmann, Jay; Hatakeyama, Kenichi; Liu, Hongxuan; Pastika, Nathaniel; Bartek, Rachel; Dominguez, Aaron; Buccilli, Andrew; Cooper, Seth; Henderson, Conor; Rumerio, Paolo; West, Christopher; Arcaro, Daniel; Avetisyan, Aram; Bose, Tulika; Gastler, Daniel; Rankin, Dylan; Richardson, Clint; Rohlf, James; Sulak, Lawrence; Zou, David; Benelli, Gabriele; Cutts, David; Garabedian, Alex; Hakala, John; Heintz, Ulrich; Hogan, Julie Managan; Kwok, Ka Hei Martin; Laird, Edward; Landsberg, Greg; Mao, Zaixing; Narain, Meenakshi; Pazzini, Jacopo; Piperov, Stefan; Sagir, Sinan; Syarif, Rizki; Yu, David; Band, Reyer; Brainerd, Christopher; Burns, Dustin; Calderon De La Barca Sanchez, Manuel; Chertok, Maxwell; Conway, John; Conway, Rylan; Cox, Peter Timothy; Erbacher, Robin; Flores, Chad; Funk, Garrett; Gardner, Michael; Ko, Winston; Lander, Richard; Mclean, Christine; Mulhearn, Michael; Pellett, Dave; Pilot, Justin; Shalhout, Shalhout; Shi, Mengyao; Smith, John; Squires, Michael; Stolp, Dustin; Tos, Kyle; Tripathi, Mani; Wang, Zhangqier; Bachtis, Michail; Bravo, Cameron; Cousins, Robert; Dasgupta, Abhigyan; Florent, Alice; Hauser, Jay; Ignatenko, Mikhail; Mccoll, Nickolas; Saltzberg, David; Schnaible, Christian; Valuev, Vyacheslav; Bouvier, Elvire; Burt, Kira; Clare, Robert; Ellison, John Anthony; Gary, J William; Ghiasi Shirazi, Seyyed Mohammad Amin; Hanson, Gail; Heilman, Jesse; Jandir, Pawandeep; Kennedy, Elizabeth; Lacroix, Florent; Long, Owen Rosser; Olmedo Negrete, Manuel; Paneva, Mirena Ivova; Shrinivas, Amithabh; Si, Weinan; Wei, Hua; Wimpenny, Stephen; Yates, Brent; Branson, James G; Cerati, Giuseppe Benedetto; Cittolin, Sergio; Derdzinski, Mark; Gerosa, Raffaele; Hashemi, Bobak; Holzner, André; Klein, Daniel; Kole, Gouranga; Krutelyov, Vyacheslav; Letts, James; Macneill, Ian; Masciovecchio, Mario; Olivito, Dominick; Padhi, Sanjay; Pieri, Marco; Sani, Matteo; Sharma, Vivek; Simon, Sean; Tadel, Matevz; Vartak, Adish; Wasserbaech, Steven; Wood, John; Würthwein, Frank; Yagil, Avraham; Zevi Della Porta, Giovanni; Amin, Nick; Bhandari, Rohan; Bradmiller-Feld, John; Campagnari, Claudio; Dishaw, Adam; Dutta, Valentina; Franco Sevilla, Manuel; George, Christopher; Golf, Frank; Gouskos, Loukas; Gran, Jason; Heller, Ryan; Incandela, Joe; Mullin, Sam Daniel; Ovcharova, Ana; Qu, Huilin; Richman, Jeffrey; Stuart, David; Suarez, Indara; Yoo, Jaehyeok; Anderson, Dustin; Bendavid, Joshua; Bornheim, Adolf; Lawhorn, Jay Mathew; Newman, Harvey B; Nguyen, Thong; Pena, Cristian; Spiropulu, Maria; Vlimant, Jean-Roch; Xie, Si; Zhang, Zhicai; Zhu, Ren-Yuan; Andrews, Michael Benjamin; Ferguson, Thomas; Mudholkar, Tanmay; Paulini, Manfred; Russ, James; Sun, Menglei; Vogel, Helmut; Vorobiev, Igor; Weinberg, Marc; Cumalat, John Perry; Ford, William T; Jensen, Frank; Johnson, Andrew; Krohn, Michael; Leontsinis, Stefanos; Mulholland, Troy; Stenson, Kevin; Wagner, Stephen Robert; Alexander, James; Chaves, Jorge; Chu, Jennifer; Dittmer, Susan; Mcdermott, Kevin; Mirman, Nathan; Patterson, Juliet Ritchie; Rinkevicius, Aurelijus; Ryd, Anders; Skinnari, Louise; Soffi, Livia; Tan, Shao Min; Tao, Zhengcheng; Thom, Julia; Tucker, Jordan; Wittich, Peter; Zientek, Margaret; Abdullin, Salavat; Albrow, Michael; Apollinari, Giorgio; Apresyan, Artur; Apyan, Aram; Banerjee, Sunanda; Bauerdick, Lothar AT; Beretvas, Andrew; Berryhill, Jeffrey; Bhat, Pushpalatha C; Bolla, Gino; Burkett, Kevin; Butler, Joel Nathan; Canepa, Anadi; Cheung, Harry; Chlebana, Frank; Cremonesi, Matteo; Duarte, Javier; Elvira, Victor Daniel; Freeman, Jim; Gecse, Zoltan; Gottschalk, Erik; Gray, Lindsey; Green, Dan; Grünendahl, Stefan; Gutsche, Oliver; Harris, Robert M; Hasegawa, Satoshi; Hirschauer, James; Hu, Zhen; Jayatilaka, Bodhitha; Jindariani, Sergo; Johnson, Marvin; Joshi, Umesh; Klima, Boaz; Kreis, Benjamin; Lammel, Stephan; Lincoln, Don; Lipton, Ron; Liu, Miaoyuan; Liu, Tiehui; Lopes De Sá, Rafael; Lykken, Joseph; Maeshima, Kaori; Magini, Nicolo; Marraffino, John Michael; Maruyama, Sho; Mason, David; McBride, Patricia; Merkel, Petra; Mrenna, Stephen; Nahn, Steve; O'Dell, Vivian; Pedro, Kevin; Prokofyev, Oleg; Rakness, Gregory; Ristori, Luciano; Schneider, Basil; Sexton-Kennedy, Elizabeth; Soha, Aron; Spalding, William J; Spiegel, Leonard; Stoynev, Stoyan; Strait, James; Strobbe, Nadja; Taylor, Lucas; Tkaczyk, Slawek; Tran, Nhan Viet; Uplegger, Lorenzo; Vaandering, Eric Wayne; Vernieri, Caterina; Verzocchi, Marco; Vidal, Richard; Wang, Michael; Weber, Hannsjoerg Artur; Whitbeck, Andrew; Acosta, Darin; Avery, Paul; Bortignon, Pierluigi; Brinkerhoff, Andrew; Carnes, Andrew; Carver, Matthew; Curry, David; Das, Souvik; Field, Richard D; Furic, Ivan-Kresimir; Konigsberg, Jacobo; Korytov, Andrey; Kotov, Khristian; Ma, Peisen; Matchev, Konstantin; Mei, Hualin; Mitselmakher, Guenakh; Rank, Douglas; Sperka, David; Terentyev, Nikolay; Thomas, Laurent; Wang, Jian; Wang, Sean-Jiun; Yelton, John; Joshi, Yagya Raj; Linn, Stephan; Markowitz, Pete; Martinez, German; Rodriguez, Jorge Luis; Ackert, Andrew; Adams, Todd; Askew, Andrew; Hagopian, Sharon; Hagopian, Vasken; Johnson, Kurtis F; Kolberg, Ted; Perry, Thomas; Prosper, Harrison; Santra, Arka; Yohay, Rachel; Baarmand, Marc M; Bhopatkar, Vallary; Colafranceschi, Stefano; Hohlmann, Marcus; Noonan, Daniel; Roy, Titas; Yumiceva, Francisco; Adams, Mark Raymond; Apanasevich, Leonard; Berry, Douglas; Betts, Russell Richard; Cavanaugh, Richard; Chen, Xuan; Evdokimov, Olga; Gerber, Cecilia Elena; Hangal, Dhanush Anil; Hofman, David Jonathan; Jung, Kurt; Kamin, Jason; Sandoval Gonzalez, Irving Daniel; Tonjes, Marguerite; Trauger, Hallie; Varelas, Nikos; Wang, Hui; Wu, Zhenbin; Zhang, Jingyu; Bilki, Burak; Clarida, Warren; Dilsiz, Kamuran; Durgut, Süleyman; Gandrajula, Reddy Pratap; Haytmyradov, Maksat; Khristenko, Viktor; Merlo, Jean-Pierre; Mermerkaya, Hamit; Mestvirishvili, Alexi; Moeller, Anthony; Nachtman, Jane; Ogul, Hasan; Onel, Yasar; Ozok, Ferhat; Penzo, Aldo; Snyder, Christina; Tiras, Emrah; Wetzel, James; Yi, Kai; Blumenfeld, Barry; Cocoros, Alice; Eminizer, Nicholas; Fehling, David; Feng, Lei; Gritsan, Andrei; Maksimovic, Petar; Roskes, Jeffrey; Sarica, Ulascan; Swartz, Morris; Xiao, Meng; You, Can; Al-bataineh, Ayman; Baringer, Philip; Bean, Alice; Boren, Samuel; Bowen, James; Castle, James; Khalil, Sadia; Kropivnitskaya, Anna; Majumder, Devdatta; Mcbrayer, William; Murray, Michael; Royon, Christophe; Sanders, Stephen; Schmitz, Erich; Stringer, Robert; Tapia Takaki, Daniel; Wang, Quan; Ivanov, Andrew; Kaadze, Ketino; Maravin, Yurii; Mohammadi, Abdollah; Saini, Lovedeep Kaur; Skhirtladze, Nikoloz; Toda, Sachiko; Rebassoo, Finn; Wright, Douglas; Anelli, Christopher; Baden, Drew; Baron, Owen; Belloni, Alberto; Calvert, Brian; Eno, Sarah Catherine; Ferraioli, Charles; Hadley, Nicholas John; Jabeen, Shabnam; Jeng, Geng-Yuan; Kellogg, Richard G; Kunkle, Joshua; Mignerey, Alice; Ricci-Tam, Francesca; Shin, Young Ho; Skuja, Andris; Tonwar, Suresh C; Abercrombie, Daniel; Allen, Brandon; Azzolini, Virginia; Barbieri, Richard; Baty, Austin; Bi, Ran; Brandt, Stephanie; Busza, Wit; Cali, Ivan Amos; D'Alfonso, Mariarosaria; Demiragli, Zeynep; Gomez Ceballos, Guillelmo; Goncharov, Maxim; Hsu, Dylan; Iiyama, Yutaro; Innocenti, Gian Michele; Klute, Markus; Kovalskyi, Dmytro; Lai, Yue Shi; Lee, Yen-Jie; Levin, Andrew; Luckey, Paul David; Maier, Benedikt; Marini, Andrea Carlo; Mcginn, Christopher; Mironov, Camelia; Narayanan, Siddharth; Niu, Xinmei; Paus, Christoph; Roland, Christof; Roland, Gunther; Salfeld-Nebgen, Jakob; Stephans, George; Tatar, Kaya; Velicanu, Dragos; Wang, Jing; Wang, Ta-Wei; Wyslouch, Bolek; Benvenuti, Alberto; Chatterjee, Rajdeep Mohan; Evans, Andrew; Hansen, Peter; Kalafut, Sean; Kao, Shih-Chuan; Kubota, Yuichi; Lesko, Zachary; Mans, Jeremy; Nourbakhsh, Shervin; Ruckstuhl, Nicole; Rusack, Roger; Tambe, Norbert; Turkewitz, Jared; Acosta, John Gabriel; Oliveros, Sandra; Avdeeva, Ekaterina; Bloom, Kenneth; Claes, Daniel R; Fangmeier, Caleb; Gonzalez Suarez, Rebeca; Kamalieddin, Rami; Kravchenko, Ilya; Monroy, Jose; Siado, Joaquin Emilo; Snow, Gregory R; Stieger, Benjamin; Alyari, Maral; Dolen, James; Godshalk, Andrew; Harrington, Charles; Iashvili, Ia; Nguyen, Duong; Parker, Ashley; Rappoccio, Salvatore; Roozbahani, Bahareh; Alverson, George; Barberis, Emanuela; Hortiangtham, Apichart; Massironi, Andrea; Morse, David Michael; Nash, David; Orimoto, Toyoko; Teixeira De Lima, Rafael; Trocino, Daniele; Wang, Ren-Jie; Wood, Darien; Bhattacharya, Saptaparna; Charaf, Otman; Hahn, Kristan Allan; Mucia, Nicholas; Odell, Nathaniel; Pollack, Brian; Schmitt, Michael Henry; Sung, Kevin; Trovato, Marco; Velasco, Mayda; Dev, Nabarun; Hildreth, Michael; Hurtado Anampa, Kenyi; Jessop, Colin; Karmgard, Daniel John; Kellams, Nathan; Lannon, Kevin; Loukas, Nikitas; Marinelli, Nancy; Meng, Fanbo; Mueller, Charles; Musienko, Yuri; Planer, Michael; Reinsvold, Allison; Ruchti, Randy; Smith, Geoffrey; Taroni, Silvia; Wayne, Mitchell; Wolf, Matthias; Woodard, Anna; Alimena, Juliette; Antonelli, Louis; Bylsma, Ben; Durkin, Lloyd Stanley; Flowers, Sean; Francis, Brian; Hart, Andrew; Hill, Christopher; Ji, Weifeng; Liu, Bingxuan; Luo, Wuming; Puigh, Darren; Winer, Brian L; Wulsin, Howard Wells; Benaglia, Andrea; Cooperstein, Stephane; Driga, Olga; Elmer, Peter; Hardenbrook, Joshua; Hebda, Philip; Lange, David; Luo, Jingyu; Marlow, Daniel; Mei, Kelvin; Ojalvo, Isabel; Olsen, James; Palmer, Christopher; Piroué, Pierre; Stickland, David; Svyatkovskiy, Alexey; Tully, Christopher; Malik, Sudhir; Norberg, Scarlet; Barker, Anthony; Barnes, Virgil E; Folgueras, Santiago; Gutay, Laszlo; Jha, Manoj; Jones, Matthew; Jung, Andreas Werner; Khatiwada, Ajeeta; Miller, David Harry; Neumeister, Norbert; Schulte, Jan-Frederik; Sun, Jian; Wang, Fuqiang; Xie, Wei; Cheng, Tongguang; Parashar, Neeti; Stupak, John; Adair, Antony; Akgun, Bora; Chen, Zhenyu; Ecklund, Karl Matthew; Geurts, Frank JM; Guilbaud, Maxime; Li, Wei; Michlin, Benjamin; Northup, Michael; Padley, Brian Paul; Roberts, Jay; Rorie, Jamal; Tu, Zhoudunming; Zabel, James; Bodek, Arie; de Barbaro, Pawel; Demina, Regina; Duh, Yi-ting; Ferbel, Thomas; Galanti, Mario; Garcia-Bellido, Aran; Han, Jiyeon; Hindrichs, Otto; Khukhunaishvili, Aleko; Lo, Kin Ho; Tan, Ping; Verzetti, Mauro; Ciesielski, Robert; Goulianos, Konstantin; Mesropian, Christina; Agapitos, Antonis; Chou, John Paul; Gershtein, Yuri; Gómez Espinosa, Tirso Alejandro; Halkiadakis, Eva; Heindl, Maximilian; Hughes, Elliot; Kaplan, Steven; Kunnawalkam Elayavalli, Raghav; Kyriacou, Savvas; Lath, Amitabh; Montalvo, Roy; Nash, Kevin; Osherson, Marc; Saka, Halil; Salur, Sevil; Schnetzer, Steve; Sheffield, David; Somalwar, Sunil; Stone, Robert; Thomas, Scott; Thomassen, Peter; Walker, Matthew; Foerster, Mark; Heideman, Joseph; Riley, Grant; Rose, Keith; Spanier, Stefan; Thapa, Krishna; Bouhali, Othmane; Castaneda Hernandez, Alfredo; Celik, Ali; Dalchenko, Mykhailo; De Mattia, Marco; Delgado, Andrea; Dildick, Sven; Eusebi, Ricardo; Gilmore, Jason; Huang, Tao; Kamon, Teruki; Mueller, Ryan; Pakhotin, Yuriy; Patel, Rishi; Perloff, Alexx; Perniè, Luca; Rathjens, Denis; Safonov, Alexei; Tatarinov, Aysen; Ulmer, Keith; Akchurin, Nural; Damgov, Jordan; De Guio, Federico; Dudero, Phillip Russell; Faulkner, James; Gurpinar, Emine; Kunori, Shuichi; Lamichhane, Kamal; Lee, Sung Won; Libeiro, Terence; Peltola, Timo; Undleeb, Sonaina; Volobouev, Igor; Wang, Zhixing; Greene, Senta; Gurrola, Alfredo; Janjam, Ravi; Johns, Willard; Maguire, Charles; Melo, Andrew; Ni, Hong; Sheldon, Paul; Tuo, Shengquan; Velkovska, Julia; Xu, Qiao; Arenton, Michael Wayne; Barria, Patrizia; Cox, Bradley; Hirosky, Robert; Ledovskoy, Alexander; Li, Hengne; Neu, Christopher; Sinthuprasith, Tutanon; Sun, Xin; Wang, Yanchu; Wolfe, Evan; Xia, Fan; Clarke, Christopher; Harr, Robert; Karchin, Paul Edmund; Sturdy, Jared; Zaleski, Shawn; Belknap, Donald; Buchanan, James; Caillol, Cécile; Dasu, Sridhara; Dodd, Laura; Duric, Senka; Gomber, Bhawna; Grothe, Monika; Herndon, Matthew; Hervé, Alain; Hussain, Usama; Klabbers, Pamela; Lanaro, Armando; Levine, Aaron; Long, Kenneth; Loveless, Richard; Pierro, Giuseppe Antonio; Polese, Giovanni; Ruggles, Tyler; Savin, Alexander; Smith, Nicholas; Smith, Wesley H; Taylor, Devin; Woods, Nathaniel

    2017-01-01

    Measurements of azimuthal angular correlations are presented for high-multiplicity pPb collisions at $\\sqrt{s_{\\mathrm{NN}}} = $ 5.02 TeV and peripheral PbPb collisions at $\\sqrt{s_{\\mathrm{NN}}} = $ 2.76 TeV. The data used in this work were collected with the CMS detector at the CERN LHC. Fourier coefficients as functions of transverse momentum and pseudorapidity are studied using the scalar product method, 4-, 6-, and 8-particle cumulants, and the Lee-Yang zeros technique. The influence of event plane decorrelation is evaluated using the scalar product method and found to account for most of the observed pseudorapidity dependence.

  18. Levels of 210 Pb and 210 Po in Brazilian cigarettes

    International Nuclear Information System (INIS)

    Santos, Pedro Lopes dos; Kelecom, Alphonse; Gouvea, Rita de Cassia dos Santos; Dutra, Iedo Ramos

    1996-01-01

    210 Po and 210 Pb concentrations have been determined in 18 Brazilian cigarette samples and compared with known data on U content. U is respectively 3-fold less and 4-fold less abundant than 210 Po or 210 Pb. No correlation could be observed between U concentration and those of Po or Pb. The mean concentration of 210 Pb is higher than that of 210 Pb observed in many other plants, even in plants frown in high background areas. (author)

  19. Prompt D$^+_s$ meson production in pp, p-Pb and Pb-Pb collisions at LHC with ALICE

    CERN Document Server

    AUTHOR|(CDS)2086009; Prino, Francesco

    The aim of this thesis is the study of the D$^+_{\\rm s}$-meson production in pp collisions at the centre-of-mass energy $\\sqrt{s}=7$ TeV and in p-Pb and Pb-Pb collisions at $\\sqrt{s_{\\rm NN}}=5.02$ TeV, with the ALICE detector at the CERN Large Hadron Collider. Heavy quarks provide an excellent way to investigate the properties of the Quark-Gluon Plasma (QGP) created in high-energy nucleus-nucleus collisions via the measurements of the nuclear modification factor ($R_{\\rm AA}$) and azimuthal anisotropy of hadrons originating from their hadronisation. At low and intermediate transverse momentum p$_{\\rm T}$, the study of the D$^+_{\\rm s}$ meson should also reveal information about the charm-quark hadronisation mechanism. If charm quarks hadronise by recombining with lighter quarks from the medium, the relative abundance of D$^+_{\\rm s}$ mesons with respect to non-strange D mesons is expected to be larger in Pb-Pb than in pp collisions, at low and intermediate p$_{\\rm T}$, due to the large abundance o...

  20. Evidence for collective phenomena from pp, p-Pb and Pb-Pb collisions at the LHC, with CMS

    CERN Multimedia

    CERN. Geneva

    2016-01-01

    The observation of a long-range, near-side, two-particle correlation (known as the ridge) has been over the past decade a key signature of the hydrodynamic evolution of the hot and strongly interacting matter produced in heavy-ion collisions. Indeed, the Quark-Gluon Plasma appears to behave as a perfect fluid and latest results from LHC experiments in Pb-Pb collisions at 2.76 and 5 TeV show a nice agreement with hydrodynamic expectations, either for inclusive charged hadrons or identified particles. The observation of the ridge in high-multiplicity pp and p-Pb collisions opened up new opportunities of exploring novel QCD dynamics in small colliding systems. While extensive studies of this long-range correlation phenomenon in p-Pb collisions have revealed its collective properties, the nature of the ridge in pp collisions remains unknown. In addition, the underlying mechanism that lies behind the ridge is still not understood, in both p-Pb and pp collisions. Latest CMS measurements of long-range particle corr...

  1. Production of strange resonances in C+C and Pb+Pb collisions at 158 AGeV

    CERN Document Server

    Friese, V

    2002-01-01

    The experiment NA49 at the CERN-SPS measures $\\phi$ , $K*(892)_0$ and $\\Lambda$ (1520) through their hadronic decay channels. For the $\\phi$ meson we present the evolution of transverse spectra and total yields from p+p over C+C to Pb+Pb at various centralities. The $K*(892)_0$ yield is given for different centralities in Pb+Pb. The yield of $\\Lambda$ (1520) in central Pb+Pb is compared to that obtained in p+p and p+Pb collisions at the same beam energy. (4 refs).

  2. Alpha decay of {sup 181}Pb

    Energy Technology Data Exchange (ETDEWEB)

    Davids, C.N.; Henderson, D.J.; Hermann, R. [and others

    1995-08-01

    The {alpha}-decay energy of {sup 181}Pb was measured as 7211(10) keV and 7044(15). In the first study the isotope was produced in {sup 90}Zr bombardments of {sup 94}Mo and, after traversing a velocity filter, implanted in a position-sensitive Si detector; no half life for {sup 181}Pb was reported. In the second study the isotope was produced in {sup 40}Ca bombardments of {sup 144}Sm and transported to a position in front of a Si(Au) surface barrier detector with a fast He-gas-jet capillary system; an estimate of 50 ms was determined for the {sup 181}Pb half life. Recently we investigated {sup 181}Pb {alpha} decay at ATLAS as part of a survey experiment in which a l-pnA beam of 400-MeV {sup 92}Mo was used to irradiate targets of {sup 89}Y, {sup 90,92,94}Zr, and {sup 92}Mo to examine yields for one- and two-nucleon evaporation products from symmetric cold-fusion reactions. Recoiling nuclei of interest were passed through the Fragment Mass Analyzer and implanted in a double-sided silicon strip detector for {alpha}-particle assay. With the {sup 90}Zr target we observed a group at 7065(20) keV which was correlated with A = 181 recoils and had a half life of 45(20) ms. Our new results for {sup 181}Pb therefore agreed with those of the second study. There was no indication in the {sup 90}Zr + {sup 92}Mo data of the 7211(10)-keV {alpha} particles seen by Keller et al. The interested reader is referred to the 1993 atomic mass evaluation wherein the input {alpha}-decay energies and resultant masses of the light Pb isotopes (including {sup 181}Pb) are discussed.

  3. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  4. $\\psi^'$ production in Pb-Pb collisions at 158 GeV/nucleon

    CERN Document Server

    Alessandro, B.; Arnaldi, R.; Atayan, M.; Beole, S.; Boldea, V.; Bordalo, P.; Borges, G.; Castor, J.; Chaurand, B.; Cheynis, B.; Chiavassa, E.; Cicalo, C.; Comets, M.P.; Constantinescu, S.; Cortese, P.; De Falco, A.; De Marco, N.; Dellacasa, G.; Devaux, A.; Dita, S.; Drapier, O.; Fargeix, J.; Force, P.; Gallio, M.; Gerschel, C.; Giubellino, P.; Golubeva, M.B.; Gonin, M.; Grigoryan, A.; Grossiord, J.Y.; Guber, F.F.; Guichard, A.; Gulkanyan, H.; Idzik, M.; Jouan, D.; Karavicheva, T.L.; Kluberg, L.; Kurepin, A.B.; Bornec, Y.Le; Lourenco, C.; Cormick, M.Mac; Marzari-Chiesa, A.; Masera, M.; Masoni, A.; Monteno, M.; Musso, A.; Petiau, P.; Piccotti, A.; Pizzi, J.R.; Prino, F.; Puddu, G.; Quintans, C.; Ramello, L.; Ramos, S.; Riccati, L.; Romana, A.; Santos, H.; Saturnini, P.; Scomparin, E.; Serci, S.; Shahoyan, R.; Sitta, M.; Sonderegger, P.; Tarrago, X.; Topilskaya, N.S.; Usai, G.L.; Vercellin, E.; Villatte, L.; Willis, N.

    2007-01-01

    \\psi^' production is studied in Pb-Pb collisions at 158 GeV/c per nucleon incident momentum. Absolute cross-sections are measured and production rates are investigated as a function of the centrality of the collision. The results are compared with those obtained for lighter colliding systems and also for the J/\\psi meson produced under identical conditions.

  5. A transferable force field for CdS-CdSe-PbS-PbSe solid systems

    Science.gov (United States)

    Fan, Zhaochuan; Koster, Rik S.; Wang, Shuaiwei; Fang, Changming; Yalcin, Anil O.; Tichelaar, Frans D.; Zandbergen, Henny W.; van Huis, Marijn A.; Vlugt, Thijs J. H.

    2014-12-01

    A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., "Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth," Nano Lett. 14, 3661-3667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange.

  6. A transferable force field for CdS-CdSe-PbS-PbSe solid systems

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Zhaochuan; Vlugt, Thijs J. H., E-mail: t.j.h.vlugt@tudelft.nl [Process and Energy Department, Delft University of Technology, Leeghwaterstraat 39, 2628 CB Delft,The Netherlands (Netherlands); Koster, Rik S.; Fang, Changming; Huis, Marijn A. van [Debye Institute for Nanomaterials Science and Center for Extreme Matter and Emergent Phenomena, Utrecht University, Princetonplein 5, 3584 CC Utrecht (Netherlands); Wang, Shuaiwei [Institute of Nanostructured Functional Materials, Huanghe Science and Technology College, Zhengzhou, Henan 450006 (China); Yalcin, Anil O.; Tichelaar, Frans D.; Zandbergen, Henny W. [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands)

    2014-12-28

    A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., “Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth,” Nano Lett. 14, 3661–3667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange.

  7. High Pb concentration stress on Typha latifolia growth and Pb removal in microcosm wetlands.

    Science.gov (United States)

    Han, Jianqiu; Chen, Fengzhen; Zhou, Yumei; Wang, Chaohua

    2015-01-01

    When constructed wetlands are used to treat high-Pb wastewater, Pb may become a stress to wetland plants, which subsequently reduces treatment performance and the other ecosystem services. To facilitate the design and operation of constructed wetlands for treatment of Pb-rich wastewater, we investigated the irreversible inhibitory level of Pb for Typha latifolia through experiments in microcosm wetlands. Seven horizontal subsurface flow constructed wetlands were built with rectangular plastic tanks and packed with marble chips and sand. All wetlands were transplanted with nine stems of Typha latifolia each. The wetlands were batch operated in a greenhouse with artificial wastewater (10 L each) for 12 days. Influent to the seven wetlands had different concentrations of Pb: 0 mg/L, 10 mg/L, 25 mg/L, 50 mg/L, 100 mg/L, 200 mg/L, and 500 mg/L, respectively. The results suggested that leaf chlorophyll relative content, relative growth rate, photosynthetic characteristics, activities of superoxide dismutase, peroxidase, and content of malondialdehyde were not affected when initial Pb concentration was at 100 mg/L and below. But when initial Pb concentration was above 100 mg/L, all of them were seriously affected. We conclude that high Pb concentrations wastewater could inhibit the growth of Typha latifolia and decrease the removal rate of wetlands.

  8. 206Pb level structure from 206Pb(n,n'γ) measurements

    International Nuclear Information System (INIS)

    Dickens, J.K.

    1982-03-01

    A study of gamma-ray data produced by neutron inelastic scattering from a lead sample enriched in the isotope 206 Pb has resulted in placements, or tentative placements, of 146 gamma rays as transitions among 112 known or postulated levels of the 206 Pb level structure

  9. Collective flow in 158AGeV Pb+Pb collisions

    NARCIS (Netherlands)

    Nishimura, S

    1998-01-01

    Anisotropic transverse flow has been studied with a magnetic spectrometer at mid-rapidity and the Plastic Ball detector at target rapidity in the WA98 experiment. Our preliminary results show the existence of directed and elliptic flow in semi-central Pb+Pb collisions. The magnitude of the directed

  10. The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

    International Nuclear Information System (INIS)

    Souza, E.C.F.; Simoes, A.Z.; Cilense, M.; Longo, E.; Varela, J.A.

    2004-01-01

    Pure and Nb doped PbZr 0.4 Ti 0.6 O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2 /Si (100) substrates and annealed at 700 deg. C. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr 0.39 Ti 0.6 Nb 0.1 O 3 showed good saturation, with values for coercive field (E c ) equal to 60 KV cm -1 and for remanent polarization (P r ) equal to 20 μC cm -2 . The measured dielectric constant (ε) is 1084 for this film. These results show good potential for application in FERAM

  11. Production of $\\phi$ -mesons in p+p, p+Pb and central Pb+Pb collisions at $E_{beam}$=158 A GeV

    CERN Document Server

    Afanasiev, S V; Bächler, J; Barna, D; Barnby, L S; Bartke, Jerzy; Barton, R A; Betev, L; Bialkowska, H; Billmeier, A; Blume, C; Blyth, C O; Boimska, B; Bracinik, J; Brady, F P; Brun, R; Buncic, P; Carr, L; Cebra, D; Cooper, G E; Cramer, J G; Csató, P; Eckardt, V; Eckhardt, F; Ferenc, D; Fischer, H G; Fodor, Z; Foka, P Y; Freund, P; Friese, V; Ftácnik, J; Gál, J; Ganz, R E; Gazdzicki, M; Gladysz-Dziadus, E; Grebieszkow, J; Harris, J W; Hegyi, S; Hlinka, V; Höhne, C; Igo, G; Ivanov, M; Jacobs, P; Janik, R; Jones, P G; Kadija, K; Kolesnikov, V I; Kowalski, M; Lasiuk, B; Lévai, Peter; Malakhov, A I; Margetis, S; Markert, C; Mayes, B W; Melkumov, G L; Mischke, A; Molnár, J; Nelson, J M; Odyniec, Grazyna Janina; Oldenburg, M; Pálla, G; Panagiotou, A D; Petridis, A; Pikna, M; Pinsky, L; Poskanzer, A M; Prindle, D J; Pühlhofer, F; Reid, J G; Renfordt, R E; Retyk, W; Ritter, H G; Röhrich, D; Roland, C; Roland, G; Rybicki, A; Sammer, T; Sandoval, A; Sann, H; Semenov, A Yu; Schäfer, E; Schmitz, N; Seyboth, P; Siklér, F; Sitár, B; Skrzypczak, E; Snellings, R; Squier, G T A; Stock, Reinhard; Strmen, P; Ströbele, H; Susa, T; Szarka, I; Szentpétery, I; Sziklai, J; Toy, M; Trainor, T A; Trentalange, S; Ullrich, T S; Varga, D; Vassiliou, Maria; Veres, G I; Vesztergombi, G; Voloshin, S A; Vranic, D; Wang, F; Weerasundara, D D; Wenig, S; Whitten, C; Xu, N; Yates, T A; Yoo, I K; Zimányi, J

    2000-01-01

    Yields and phase space distributions of phi -mesons emitted from p+p (minimum bias trigger), p+Pb (at various centralities) and central Pb +Pb collisions are reported (E/sub beam/=158 A GeV). The decay phi to K/sup +/K/sup -/ was used for identification. The phi / pi ratio is found to increase by a factor of 3.0+or-0.7 from inelastic p+p to central Pb+Pb. Significant enhancement in this ratio is also observed in subclasses of p+p events (characterized by high charged-particle multiplicity) as well as in the forward hemisphere of central p+Pb collisions. In Pb+Pb no shift or significant broadening of the phi - peak is seen. (28 refs).

  12. Syntheses and characterizations of secondary Pb-O bonding supported Pb(II)-sulfonate complexes

    Science.gov (United States)

    Huang, Guo-Zhen; Zou, Xin; Zhu, Zhi-Biao; Deng, Zhao-Peng; Huo, Li-Hua; Gao, Shan

    2018-06-01

    The reaction of Pb(II) salts and mono- or disulfonates leads to the formation of eight new Pb(II)-mono/disulfonate complexes, [Pb(L1)(H2O)]2 (1), [Pb4(L2)2(AcO)2]n·5nH2O (2), [Pb(L3)(H2O)]2 (3), [Pb(HL4)(H2O)2]n·nH2O (4), [Pb(HL5)(H2O)2]n·2nH2O (5), [Pb(H2L6)(H2O)]n·nDMF·2nH2O (6), [Pb2(H3L7)4(H2O)6]·2H2O (7) and [Pb(H2L7)(H2O)]n·nH2O (8) (H2L1= 2-hydroxy-5-methyl-benzenesulfonic acid, H3L2= 2-hydroxyl-5-methyl- 1,3-benzenedisulfonic acid, H2L3= 2-hydroxy-5-nitro-benzenesulfonic acid, H3L4= 2-hydroxyl-5-bromo-1,3- benzenedisulfonic acid, H3L5= 2-hydroxyl-5-carboxyl-benzenesulfonic acid, H4L6= 2,5-dihydroxyl-3-carboxyl- benzenesulfonic acid, H4L7= 2,4-dihydroxyl-5-carboxyl-benzenesulfonic acid, DMF = N,N'-dimethyl-formamide, AcO- = acetate), which have been characterized by elemental analysis, IR, TG, PL, powder and single-crystal X-ray diffraction. In view of the primary Pb-O bonds, these eight complexes exhibit diverse dinuclear (1, 3 and 7), helical chain (4), wave-like chain (5), linear chain (6), zigzag chain (8) and layer structure (2), in which the Pb(II) cations present different hemi-directed geometries. Taking the secondary Pb-O bonds into account, chain structure for complex 7, layer motifs for complexes 1 and 3-6, as well as 3-D framework for complex 8 are observed with Pb(II) cations showing more intricate holo-directed geometries. The various coordination modes of these seven different mono/disulfonate anions are responsible for the formation of these multiple structures. Furthermore, the introduction of hydroxyl and carboxyl groups increases the coordination ability of sulfonate to the p-block metal cation. Luminescent analyses indicate that complex 7 presents purple emission at 395 nm at room temperature.

  13. Pseudorapidity and transverse momentum dependence of flow harmonics in pPb and PbPb collisions

    Energy Technology Data Exchange (ETDEWEB)

    Sirunyan, Albert M; et al.

    2017-10-21

    Measurements of azimuthal angular correlations are presented for high-multiplicity pPb collisions at $\\sqrt{s_\\mathrm{NN}}=$ 5.02 TeV and peripheral PbPb collisions at $\\sqrt{s_\\mathrm{NN}}=$ 2.76 TeV. The data used in this work were collected with the CMS detector at the CERN LHC. Fourier coefficients as functions of transverse momentum and pseudorapidity are studied using the scalar product method, 4-, 6-, and 8-particle cumulants, and the Lee-Yang zeros technique. The influence of event plane decorrelation is evaluated using the scalar product method and found to account for most of the observed pseudorapidity dependence.

  14. Systematic studies of charge-dependent azimuthal correlation in pPb and PbPb collisions at the LHC

    CERN Document Server

    Tu, Zhoudunming

    2017-01-01

    Studies of charge-dependent azimuthal correlations for same- and opposite-sign particle pairs are presented in PbPb collisions at 5.02 TeV and pPb collisions at 5.02 and 8.16 TeV, with the CMS experiment at the LHC. The azimuthal correlations are evaluated with respect to the second- and also higher-order event planes, as a function of particle pseudorapidity and transverse momentum, and event multiplicity. By employing an event-shape engineering technique, the dependence of correlations on azimuthal anisotropy flow is investigated. Results presented provide new insights to the origin of observed charge-dependent azimuthal correlations, and have important implications to the search for the chiral magnetic effect in heavy ion collisions.

  15. Beauty production measurements in pp, p-Pb and Pb-Pb collisions with the ALICE detector

    Science.gov (United States)

    2017-12-01

    Beauty production has been measured in the ALICE experiment via its semi-electronic decays and non-prompt J/Ψ at mid-rapidity. A review of results on beauty production at mid-rapidity in pp collisions at √s = 7TeV and at √s = 2.76TeV. in p-Pb collisions at = 5.02 TeV and in Pb-Pb collisions at q= 2.76TeV are reported, along with the current status of b-jet tagging studies in ALICE. Prospects of beauty production measurements with RUN2 and RUN3-4 are outlined, focusing on the upgraded Inner Tracking System (ITS) and the new Muon Forward Tracker (MFT).

  16. J/Psi and Gamma Photoproduction in Pb-Pb Collisions at LHC

    CERN Document Server

    Li Yun De; CERN. Geneva

    1996-01-01

    abstractINT-96-01 Hard photoproduction of J/psi and upsilon at LHC Pb-Pb collisions with cms energy 6300 AGeV, is discussed in the process Pb+Pb--Pb + J/psi (upsilon) + X with three types of equivalent photon spectrum function. It turns out that in hard photoproduction the J/psi cross section is dominated by the gluon and heavy quark fragmentation, especially the gluon fragmentation is very important at large pt; while the Upsilon cross section is dominated by the leading order process. It may be concluded from the result that the hard photoproduction processes can be used to test several important problems such as the gluon distribution in nucleus, gluon and heavy quark fragmentation of J/psi , etc. In addition, these processes also provide a new way of testing the EMC effects.

  17. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    Science.gov (United States)

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

  18. PZT thin film actuated elastic fin micromotor.

    Science.gov (United States)

    Dubois, M A; Muralt, P

    1998-01-01

    A piezoelectric elastic fin micromotor based on a PbZr(0.53 )Ti(0.47)O(3) thin film driving a micromachined silicon membrane was fabricated and studied. The stator was characterized by interferometry, and a laser set-up was used to measure the angular velocity and acceleration of the motor. The torque, the output power, and the efficiency of the device were extracted from these measurements. Values up to 1020 rpm and 0.94 microNm were observed for the velocity and the torque, respectively, which would be sufficient for a wristwatch application. The present version exhibited an efficiency of 0.17%, which could theoretically be increased to 4.8%

  19. PbSe Nanocrystal Excitonic Solar Cells

    KAUST Repository

    Choi, Joshua J.

    2009-11-11

    We report the design, fabrication, and characterization of colloidal PbSe nanocrystal (NC)-based photovoltaic test structures that exhibit an excitonic solar cell mechanism. Charge extraction from the NC active layer is driven by a photoinduced chemical potential energy gradient at the nanostructured heterojunction. By minimizing perturbation to PbSe NC energy levels and thereby gaining insight into the "intrinsic" photovoltaic properties and charge transfer mechanism of PbSe NC, we show a direct correlation between interfacial energy level offsets and photovoltaic device performance. Size dependent PbSe NC energy levels were determined by cyclic voltammetry and optical spectroscopy and correlated to photovoltaic measurements. Photovoltaic test structures were fabricated from PbSe NC films sandwiched between layers of ZnO nanoparticles and PEDOT:PSS as electron and hole transporting elements, respectively. The device current-voltage characteristics suggest a charge separation mechanism that Is distinct from previously reported Schottky devices and consistent with signatures of excitonic solar cells. Remarkably, despite the limitation of planar junction structure, and without film thickness optimization, the best performing device shows a 1-sun power conversion efficiency of 3.4%, ranking among the highest performing NC-based solar cells reported to date. © 2009 American Chemical Society.

  20. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  1. Quasiparticle self-consistent GW calculations for PbS, PbSe, and PbTe: Band structure and pressure coefficients

    DEFF Research Database (Denmark)

    Svane, Axel; Christensen, Niels Egede; Cardona,, M.

    2010-01-01

    The electronic band structures of PbS, PbSe, and PbTe in the rocksalt structure are calculated with the quasiparticle self-consistent GW (QSGW) approach with spin-orbit coupling included. The semiconducting gaps and their deformation potentials as well as the effective masses are obtained. The GW...

  2. Neutron particle-hole electric dipole states in 206207208Pb

    International Nuclear Information System (INIS)

    Dickey, P.A.

    1979-01-01

    Inelastic proton scattering on 206 Pb, 207 Pb, and 208 Pb through isobaric analog resonances was used to study neutron particle-hole excitations with large ground-state gamma branches in these Pb isotopes. Relative (p,p') cross sections at 90 0 are extracted for structures selectively excited on the d/sub 5/2/, s/sub 1/2/, and d/sub 3/2/-g/sub 7/2/ resonances. Interpretation of excitations in 206 Pb and 207 Pb in terms of coupling to states in 208 Pb is discussed. Branching ratios for 1 - states in 208 Pb at 4.84, 5.29, 5.94, and 6.31 MeV and the 1/2 + state in 207 Pb at 4.63 MeV are deduced. 15 figures, 4 tables

  3. Supported Lead in Pb-210 Chronology

    Energy Technology Data Exchange (ETDEWEB)

    Pittauerova, D.; Hettwig, B.; Fischer, H. W. [Institute of Environmental Physics, University of Bremen, Bremen (Germany)

    2013-07-15

    A widely applied method of supported lead estimation in sediments using gamma spectrometric {sup 226}Ra determination via {sup 222}Rn short lived daughter products relies on radioactive equilibrium between {sup 226}Ra and {sup 222}Rn being established after sealing the samples. Advantages and disadvantages of methods of {sup 226}Ra estimation in sediments, using either {sup 222}Rn daughter products or direct estimation by 186.2 keV gamma emissions are discussed. An equilibrium experiment was performed using test samples and in one case radioactive equilibrium was not reached. On a theoretical sediment profile it was shown how systematic errors in supported {sup 210}Pb estimation can lead to incorrect interpretations of {sup 210}Pb{sub xs} profiles and therefore affect {sup 210}Pb derived chronologies. (author)

  4. Thin Solid Oxide Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

  5. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  6. Ceramic Composite Thin Films