Molecular dynamics simulations of ferroelectric domain formation by oxygen vacancy

Science.gov (United States)

Zhu, Lin; You, Jeong Ho; Chen, Jinghong; Yeo, Changdong

2018-05-01

An oxygen vacancy, known to be detrimental to ferroelectric properties, has been investigated numerically for the potential uses to control ferroelectric domains in films using molecular dynamics simulations based on the first-principles effective Hamiltonian. As an electron donor, an oxygen vacancy generates inhomogeneous electrostatic and displacement fields which impose preferred polarization directions near the oxygen vacancy. When the oxygen vacancies are placed at the top and bottom interfaces, the out-of-plane polarizations are locally developed near the interfaces in the directions away from the interfaces. These polarizations from the interfaces are in opposite directions so that the overall out-of-plane polarization becomes significantly reduced. In the middle of the films, the in-plane domains are formed with containing 90° a 1/a 2 domain walls and the films are polarized along the [1 1 0] direction even when no electric field is applied. With oxygen vacancies placed at the top interface only, the films exhibit asymmetric hysteresis loops, confirming that the oxygen vacancies are one of the possible sources of ferroelectric imprint. It has been qualitatively demonstrated that the domain structures in the imprint films can be turned on and off by controlling an external field along the thickness direction. This study shows qualitatively that the oxygen vacancies can be utilized for tuning ferroelectric domain structures in films.

Ferroelectric domain structures in -oriented K0.15Na0.85NbO3 lead-free single crystal

Directory of Open Access Journals (Sweden)

Yan Chen

2015-03-01

Full Text Available In this work, ferroelectric domain structures of -oriented K0.15Na0.85NbO3 single crystal are characterized. Transmission electron microscopy (TEM observation revealed high-density of laminate domain structures in the crystal and the lattices of the neighboring domains are found to be twisted in a small angle. Superlattice diffraction spots of 1 2 { eeo } and 1 2 { ooe } in electron diffraction patterns are observed in the crystal, revealing the a+a+c− tilting of oxygen octahedral in the perovskite structure. The piezoresponse of domains and in-situ poling responses of K0.15Na0.85NbO3 crystal are observed by piezoresponse force microscopy (PFM, and the results assure its good ferroelectric properties.

Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

KAUST Repository

Ma, He

2016-04-10

The weak bond energy and large anisotropic domain wall energy induce many special characteristics of the domain nucleation, growth, and polarization switch in triglycine sulfate (TGS) and imidazolium perchlorate (IM), two typical molecular ferroelectrics. Their domain nucleation and polarization switch are rather slower than those of conventional oxide ferroelectrics, which may be due to the weaker bond energy of hydrogen bond or van der Waals bond than that of ionic bond. These chemical bonds dominate the elastic energy, with the latter being an important component of domain wall energy and playing an important role in domain nucleation and domain growth. The ratio of anisotropic domain wall energy to Gibbs free energy is large in TGS and IM, which allows a favorable domain shape and a special domain evolution under a certain electric field. Therefore, this study not only sheds light on the physical nature but also indicates the application direction for molecular ferroelectrics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Ferroelectric and ferroelastic domain structures in piezoelectric ceramics

International Nuclear Information System (INIS)

Bursill, L.A.; Julin Peng.

1990-01-01

A discussion of the results of conventional and high-resolution high-voltage electron microscopic studies of two ferroelectrics, barium sodium niobate and lead zirconium titanate is presented. It is shown that a rich variety of information such as ferroelectric and/or ferroelastic domains discommensurations versus antiphase boundaries, extended versus localized chemical defects and multiphase versus grain boundaries, become accessible in both single crystal and polycrystalline piezoelectrics, when a combination of high-resolution and conventional electron optical techniques is used. 15 refs., 8 figs

Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

International Nuclear Information System (INIS)

Kim, D J; Gruverman, A; Connell, J G; Seo, S S A

2016-01-01

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO 3 and Pb(Zr,Ti)O 3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO 3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO 3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. (paper)

Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

Science.gov (United States)

Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-12-01

Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb (Mg1 /3Nb2 /3)O3-33 % PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

Monte Carlo Simulation of Ferroelectric Domain Structure and Applied Field Response in Two Dimensions

Energy Technology Data Exchange (ETDEWEB)

Potter, Jr., B.G.; Tikare, V.; Tuttle, B.A.

1999-06-30

A 2-D, lattice-Monte Carlo approach was developed to simulate ferroelectric domain structure. The model currently utilizes a Hamiltonian for the total energy based only upon electrostatic terms involving dipole-dipole interactions, local polarization gradients and the influence of applied electric fields. The impact of boundary conditions on the domain configurations obtained was also examined. In general, the model exhibits domain structure characteristics consistent with those observed in a tetragonally distorted ferroelectric. The model was also extended to enable the simulation of ferroelectric hysteresis behavior. Simulated hysteresis loops were found to be very similar in appearance to those observed experimentally in actual materials. This qualitative agreement between the simulated hysteresis loop characteristics and real ferroelectric behavior was also confirmed in simulations run over a range of simulation temperatures and applied field frequencies.

Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

International Nuclear Information System (INIS)

Qiu, Xunlin

2010-01-01

Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called “ferroelectrets”), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties that may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.

Acoustic Imaging Frequency Dynamics of Ferroelectric Domains by Atomic Force Microscopy

International Nuclear Information System (INIS)

Kun-Yu, Zhao; Hua-Rong, Zeng; Hong-Zhang, Song; Sen-Xing, Hui; Guo-Rong, Li; Qing-Rui, Yin; Shimamura, Kiyoshi; Kannan, Chinna Venkadasamy; Villora, Encarnacion Antonia Garcia; Takekawa, Shunji; Kitamura, Kenji

2008-01-01

We report the acoustic imaging frequency dynamics of ferroelectric domains by low-frequency acoustic probe microscopy based on the commercial atomic force microscopy It is found that ferroelectric domain could be firstly visualized at lower frequency down to 0.5 kHz by AFM-based acoustic microscopy The frequency-dependent acoustic signal revealed a strong acoustic response in the frequency range from 7kHz to 10kHz, and reached maximum at 8.1kHz. The acoustic contrast mechanism can be ascribed to the different elastic response of ferroelectric microstructures to local elastic stress fields, which is induced by the acoustic wave transmitting in the sample when the piezoelectric transducer is vibrating and exciting acoustic wave under ac electric fields due to normal piezoelectric effects. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Science.gov (United States)

Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan

2018-01-01

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

Tip-induced domain structures and polarization switching in ferroelectric amino acid glycine

Energy Technology Data Exchange (ETDEWEB)

Seyedhosseini, E., E-mail: Seyedhosseini@ua.pt; Ivanov, M. [CICECO-Aveiro Institute of Materials and Department of Physics, University of Aveiro, 3810-193 Aveiro (Portugal); Bdikin, I. [TEMA and Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Vasileva, D. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kudryavtsev, A. [Moscow State Institute of Radioengineering, Electronics and Automation, 119454 Moscow (Russian Federation); Rodriguez, B. J. [Conway Institute of Biomolecular and Biomedical Research and School of Physics, University College Dublin, Dublin (Ireland); Kholkin, A. L. [CICECO-Aveiro Institute of Materials and Department of Physics, University of Aveiro, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2015-08-21

Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and a switchable polarization at room temperature. Here, we study tip-induced domain structures and polarization switching in the smallest amino acid β-glycine, representing a broad class of non-centrosymmetric amino acids. We show that β-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of an applied voltage and pulse duration. The domain shape is dictated by polarization screening at the domain boundaries and mediated by growth defects. Thermodynamic theory is applied to explain the domain propagation induced by the AFM tip. Our findings suggest that the properties of β-glycine are controlled by the charged domain walls which in turn can be manipulated by an external bias.

Effect of domains configuration on crystal structure in ferroelectric ...

Indian Academy of Sciences (India)

2017-09-09

Sep 9, 2017 ... It is well known that domains and crystal structure control the physical properties of ferroelectrics. ... The as-prepared ceramics were crushed to fine pow- ders. ..... [1] Gao J, Xue D, Wang Y, Wang D, Zhang L, Wu H et al 2011.

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

Energy Technology Data Exchange (ETDEWEB)

Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

2018-01-25

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

Science.gov (United States)

Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

2018-03-01

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this. ).

Atomic resolution imaging of ferroelectric domains

International Nuclear Information System (INIS)

Bursill, L.A.

1997-01-01

Electron optical principles involved in obtaining atomic resolution images of ferroelectric domains are reviewed, including the methods available to obtain meaningful interpretation and analysis of the image detail in terms of the atomic structures. Recent work is concerned with establishing the relationship between the essentially static chemical nanodomains and the spatial and temporal fluctuations of the nanoscale polar domains present in the relaxor class of materials, including lead scandium tantalate (PST) and lead magnesium niobate (PMN). Correct interpretation of the images required use of Next Nearest Neighbour Ising model simulations for the chemical domain textures upon which we must superimpose the polar domain textures; an introduction to this work is presented. A thorough analysis of the atomic scale chemical inhomogeneities, based upon the HRTEM results, has lead to an improved formulation of the theory of the dielectric response of PMN and PST, which is capable to predict the observed temperature and frequency dependence. HRTEM may be combined with solid state and statistical physics principles to provide a deeper understanding of structure/property relationships. 15 refs., 6 figs

Three-dimensional, time-resolved profiling of ferroelectric domain wall dynamics by spectral-domain optical coherence tomography

International Nuclear Information System (INIS)

Haussmann, Alexander; Schmidt, Sebastian; Wehmeier, Lukas; Eng, Lukas M.; Kirsten, Lars; Cimalla, Peter; Koch, Edmund

2017-01-01

We apply here spectral-domain optical coherence tomography (SD-OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium-doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ∝ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3-dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs' polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD-OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high-speed SD-OCT setup for the real-time DW tracking upon ferroelectric domain switching under high external fields. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Three-dimensional, time-resolved profiling of ferroelectric domain wall dynamics by spectral-domain optical coherence tomography

Energy Technology Data Exchange (ETDEWEB)

Haussmann, Alexander; Schmidt, Sebastian; Wehmeier, Lukas; Eng, Lukas M. [Technische Universitaet Dresden, Institute of Applied Physics and Center for Advancing Electronics Dresden (cfaed), Dresden (Germany); Kirsten, Lars; Cimalla, Peter; Koch, Edmund [Technische Universitaet Dresden, Faculty of Medicine Carl Gustav Carus, Anesthesiology and Intensive Care Medicine, Clinical Sensoring and Monitoring, Dresden (Germany)

2017-08-15

We apply here spectral-domain optical coherence tomography (SD-OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium-doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ∝ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3-dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs' polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD-OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high-speed SD-OCT setup for the real-time DW tracking upon ferroelectric domain switching under high external fields. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Microscopic observation of ferroelectric domains in SrTiO3 using birefringence imaging techniques under high electric fields

International Nuclear Information System (INIS)

Manaka, Hirotaka; Nozaki, Hirofumi; Miura, Yoko

2017-01-01

Phase transitions in SrTiO 3 between quantum paraelectric, coherent paraelectric, and electric-field-induced ferroelectric states are governed by tetragonal domains with quantum fluctuations. However, their characteristics are still unclear. To observe the electric-field-induced ferroelectric state using birefringence imaging techniques, we developed a suitable sample holder to apply high electric fields of up to E ≃ 5 kV/cm and temperatures down to T = 20 K. From birefringence imaging measurements of the ferroelectric LiNbO 3 with varying electric field, distributions of the electric field in the sample stage were found to be negligible. In SrTiO 3 , a huge-retardance area corresponding to the ferroelectric domains appears at E > 2 kV/cm and T ≤ 60 K even though the paraelectric domains partially remain. Furthermore, the fast-axis direction rotates by 90° at the ferroelectric phase transition because of an electrostrictive effect in ferroelectrics. The phase diagram of the critical electric field and temperature agrees with previous reports obtained from dielectric and neutron scattering measurements. (author)

Far- and near-field second-harmonic imaging of ferroelectric domain walls

DEFF Research Database (Denmark)

Bozhevolnyi, Sergey I.; Pedersen, K.; Skettrup, Torben

1998-01-01

Domain walls in periodically poled ferroelectric LiNbO3 crystals are observed with both far- and near-field imaging techniques that make use of second harmonic generation in the transition regions between neighbouring domains. Second harmonic images of domain walls represent bright lines of about.......5 micrometers in width (as measured with the near-field microscope) for the polarization of the second harmonic radiation perpendicular to the domain walls. Origin and selection rules for the constrast in second harmonic images of domain walls are discussed....

Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

Energy Technology Data Exchange (ETDEWEB)

Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Wu, Di; Lu, Yan-qing, E-mail: yqlu@nju.edu.cn [National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Geng, De-qiang [Jinan Jingzheng Electronics Co., Ltd., Jinan 250100 (China)

2016-07-15

Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

Science.gov (United States)

Kim, Yu Jin; Park, Hyeon Woo; Hyun, Seung Dam; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Moon, Taehwan; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

2017-12-13

Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO 3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

Science.gov (United States)

Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

2018-06-01

The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

Radiation-damage-assisted ferroelectric domain structuring in magnesium-doped lithium niobate

Science.gov (United States)

Jentjens, L.; Peithmann, K.; Maier, K.; Steigerwald, H.; Jungk, T.

2009-06-01

Irradiation of 5% magnesium-doped lithium niobate crystals (LiNbO3:Mg) with high-energy, low-mass 3He ions, which are transmitted through the crystal, changes the domain reversal properties of the material. This enables easier domain engineering compared to non-irradiated material and assists the formation of small-sized periodically poled domains in LiNbO3:Mg. Periodic domain structures exhibiting a width of ≈520 nm are obtained in radiation-damaged sections of the crystals. The ferroelectric poling behavior between irradiated and non-treated material is compared.

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films

Science.gov (United States)

Heon Kim, Tae; Yoon, Jong-Gul; Hyub Baek, Seung; Park, Woong-Kyu; Mo Yang, Sang; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Won Noh, Tae

2015-07-01

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films.

Science.gov (United States)

Kim, Tae Heon; Yoon, Jong-Gul; Baek, Seung Hyub; Park, Woong-kyu; Yang, Sang Mo; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Noh, Tae Won

2015-07-01

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

Influence of UV light and heat on the ferroelectric properties of lithium niobate crystals

Energy Technology Data Exchange (ETDEWEB)

Steigerwald, Hendrik

2011-08-15

One of the most important non-linear-optical materials is lithium niobate, due to its ease of fabrication, robustness, transparency in the visible-to-infrared and excellent nonlinear properties. In this thesis the issue of tailoring ferroelectric domain structures in lithium niobate crystals is approached from two sides: interaction of defect structures inside the crystal with growing ferroelectric domains is investigated and also actual domain patterning on all crystal faces by different methods is performed. Special emphasis is given to the Mg-doped material. The fundamental understanding and the methods of domain patterning developed in this thesis are then used to obtain tailored domain structures that meet the requirements of their intended application in non-linear optics. (orig.)

Indentation plasticity of barium titanate single crystals: Dislocation influence on ferroelectric domain walls

International Nuclear Information System (INIS)

Liu, D.; Chelf, M.; White, K.W.

2006-01-01

The plastic behaviors of barium titanate (001) and (110) single crystals are studied with atomic force microscopy and piezoresponse force microscopy (PFM) following nanoindendation damage. Plastic deformation mechanisms of ferroelectric barium titanate single crystals are discussed with a focus on the interaction between PFM response and dislocation activities. Nanoindentation tests indicate that the theoretical strength is approached prior to the first pop-in event, consistent with the creation of dislocation nucleation sites required for the onset of plasticity. Surface topographic and piezoelectric analyses indicate that pile-ups around indents result from dislocation activities on the primary slip system, {110} pc pc . The more complex indentation-induced domain patterns observed on (110) barium titanate are also discussed

Self-patterning of arrays of ferroelectric capacitors: description by theory of substrate mediated strain interactions

International Nuclear Information System (INIS)

Dawber, M; Szafraniak, I; Alexe, M; Scott, J F

2003-01-01

Self-patterning presents an appealing alternative to lithography for the production of arrays of nanoscale ferroelectric capacitors for use in high density non-volatile memory devices. However current levels of registration achieved experimentally are far from adequate for this application. To provide a guide for experiment we have applied the theories developed for self-patterning of semiconductor nanocrystals to two self-patterning systems of potential interest for ferroelectric memory applications, metallic bismuth oxide on bismuth titanate and ferroelectric lead zirconate titanate on strontium titanate. (letter to the editor)

Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films

Energy Technology Data Exchange (ETDEWEB)

Matzen, Sylivia [University of Groningen, The Netherlands; Nesterov, Okeksiy [ORNL; Rispens, Gregory [University of Groningen, The Netherlands; Heuver, J. A. [University of Groningen, The Netherlands; Bark, C [University of Wisconsin, Madison; Biegalski, Michael D [ORNL; Christen, Hans M [ORNL; Noheda, Beatriz [University of Groningen, The Netherlands

2014-01-01

Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.

On the persistence of polar domains in ultrathin ferroelectric capacitors

Czech Academy of Sciences Publication Activity Database

Zubko, P.; Lu, H.; Bark, C.-W.; Martí, Xavier; Santiso, J.; Eom, C.-B.; Catalan, G.; Gruverman, A.

2017-01-01

Roč. 29, č. 28 (2017), s. 1-8, č. článku 284001. ISSN 1361-648X R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : ultrathin barium titanate * tunnel junctions * ferroelectric domains * polarization screening * retention * negative capacitance Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Indentation plasticity of barium titanate single crystals: Dislocation influence on ferroelectric domain walls

Energy Technology Data Exchange (ETDEWEB)

Liu, D. [Department of Mechanical Engineering, University of Houston, 4800 Calhoun Road, Houston, TX 77204 (United States)]. E-mail: duo.liu@mail.uh.edu; Chelf, M. [Department of Mechanical Engineering, University of Houston, 4800 Calhoun Road, Houston, TX 77204 (United States); White, K.W. [Department of Mechanical Engineering, University of Houston, 4800 Calhoun Road, Houston, TX 77204 (United States)

2006-10-15

The plastic behaviors of barium titanate (001) and (110) single crystals are studied with atomic force microscopy and piezoresponse force microscopy (PFM) following nanoindendation damage. Plastic deformation mechanisms of ferroelectric barium titanate single crystals are discussed with a focus on the interaction between PFM response and dislocation activities. Nanoindentation tests indicate that the theoretical strength is approached prior to the first pop-in event, consistent with the creation of dislocation nucleation sites required for the onset of plasticity. Surface topographic and piezoelectric analyses indicate that pile-ups around indents result from dislocation activities on the primary slip system, {l_brace}110{r_brace}{sub pc}<11-bar 0>{sub pc}. The more complex indentation-induced domain patterns observed on (110) barium titanate are also discussed.

Ferroelectric domains and phase evolution in (Fe:) KTa{sub 1−x}Nb{sub x}O{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Zhao, Hongyang; Cai, Kang; Fan, Ziran; Huang, Zhideng [Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Department of Materials Science and Engineering, Wuhan Institute of Technology, 693 Xiongchu Road, Wuhan 430073 (China); Ma, Zhibin, E-mail: mazb@wit.edu.cn [Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Department of Materials Science and Engineering, Wuhan Institute of Technology, 693 Xiongchu Road, Wuhan 430073 (China); Jia, Tingting; Kimura, Hideo [National Institute for Materials Science, Sengen 1-2-1, Tsukuba 305-0047 (Japan); Yang, Yuguo [New Materials Research Institute, Shandong Academy of Sciences, No. 19, Keyuan Road, Jinan 250014 (China); Matsumoto, Takao; Tohei, Tetsuya; Shibata, Naoya; Ikuhara, Yuichi [Institute of Engineering Innovation, School of Engineering, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2017-08-15

Highlights: • Three phase transitions were observed: the R–O, O–T, T–C evolutions. • KTN ferroelectric domain switching is because of the nano-polar-regions. • The domain evolution showed KTN has triangle shape, but Fe: KTN has straight line. - Abstract: The domain structures and phase evolution in mixed ferroelectric (Fe): KTa{sub 1−x}Nb{sub x}O{sub 3} (KTN) crystals were investigated. Temperature dependent Raman spectra show that Curie temperatures of KTN and Fe: KTN are far below room temperature, but the ferroelectric domain switching was still visualized by scanning probe microscopy at room temperature. These observed domains origin from the nano-regions near the grain boundaries. In addition, the intrinsic domains (triangle for KTN and straight line/stripe for Fe: KTN) could only be observed at low temperature by transmission electron microscopy. Three phase transitions in Fe: KTN crystals were found by Raman spectroscopy and dielectric testing: 175 K for Rhombohedral-to-Orthorhombic (R–O), 210 K for Orthorhombic-to-Tetragonal (O–T) and 250 K for Tetragonal-to-Cubic (T–C), which is consistent with the domain behavior.

Losses in Ferroelectric Materials

Science.gov (United States)

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-01-01

Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

Losses in Ferroelectric Materials.

Science.gov (United States)

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-03-01

Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

Photoelectron spectroscopy and spectro-microscopy of Pb(Zr,Ti)O{sub 3} (1 1 1) thin layers: Imaging ferroelectric domains with binding energy contrast

Energy Technology Data Exchange (ETDEWEB)

Huşanu, Marius A.; Popescu, Dana G.; Tache, Cristian A. [National Institute of Materials Physics, Atomistilor 105b, 077125 Magurele-Ilfov (Romania); Apostol, Nicoleta G. [National Institute of Materials Physics, Atomistilor 105b, 077125 Magurele-Ilfov (Romania); Elettra Sincrotrone Trieste, S.S. 14 – km 163,5, Area Science Park, 34169 Basovizza-Trieste (Italy); Barinov, Alexei; Lizzit, Silvano; Lacovig, Paolo [Elettra Sincrotrone Trieste, S.S. 14 – km 163,5, Area Science Park, 34169 Basovizza-Trieste (Italy); Teodorescu, Cristian M., E-mail: teodorescu@infim.ro [National Institute of Materials Physics, Atomistilor 105b, 077125 Magurele-Ilfov (Romania)

2015-10-15

Graphical abstract: - Highlights: • Achievement of well ordered PZT(1 1 1) surfaces with reasonable low energy electron diffraction patterns and good stoichiometry. • Ability of photoelectron spectromicroscopy to visualize ferroelectric domains with contrast of binding energy. • Model taking into account the influence of photogenerated carriers on the depolarization field and its torque on the polarization vector. • Evidence of domain wall migration induced by photogenerated carriers. • Segregation of metal Pb only on areas with out-of-plane component of the polarization pointing outwards. - Abstract: The ability of photoelectron spectro-microscopy with sub-micrometer lateral resolution to identify ferroelectric domains by analysis of surface band bendings is demonstrated on lead zirco-titanate PZT(1 1 1) thin films grown by pulsed laser deposition. Conventional synchrotron radiation X-ray photoelectron spectroscopy allowed one to derive the surface composition of the sample and evidenced shifts toward higher binding energy when the sample is subject to intense soft X-ray beam. A basic model is developed which supposes that photogenerated carriers reduce the depolarization field, yielding a lower torque applied to the ferroelectric polarization. As a consequence, the out-of-plane component of the polarization increases. Domain migration during irradiation with soft X-ray is inferred from the relative amplitude of the components with different binding energy. When the flux density of soft X-ray is on the order of 10{sup 11} photons/(s μm{sup 2}), metal Pb clusters are formed at the surface on areas with the out-of-plane component of the polarization pointing outwards only.

Structural Consequences of Ferroelectric Nanolithography

Energy Technology Data Exchange (ETDEWEB)

J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

2011-12-31

Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

Room temperature ferroelectricity in continuous croconic acid thin films

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

2016-09-05

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

Non-volatile polarization switch of magnetic domain wall velocity

Energy Technology Data Exchange (ETDEWEB)

Huang, Z.; Stolichnov, I.; Setter, N. [Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland); Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L. [University of Grenoble Alpes, Institut Néel, F-38042 Grenoble (France); CNRS, Institut Néel, F-38042 Grenoble (France); Auffret, S.; Gaudin, G. [SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)

2015-12-21

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

Polarization reversal and ferroelectric domain structure observed in electroded cesium dihydrogen phosphate crystals using an X-ray anomalous dispersion effect

International Nuclear Information System (INIS)

Ozaki, Toru; Amau, Toshirou; Kawata, Hiroshi; Mizuno, Kaoru; Mori, Koichi.

1997-01-01

We have carried out an X-ray intensity measurement and X-ray topography on electroded b plates of ferroelectric cesium dihydrogen phosphate, CsH 2 PO 4 (CDP), using a synchrotron radiation with a wavelength of 2.482 A above the Cs L 3 -absorption edge. We have found that integrated intensities I(150) and I(1-bar5-bar0) show an anomalously large breakdown of Friedel's law, I(150)/I(1-bar5-bar0)=10.4 at 125 K, and display a ferroelectric hysteresis loop. The hysteresis loop determines that spontaneous polarization is antiparallel to the b axes set in both ferroelectric crystal structures related by inversions. The (150) diffraction topography shows that a single domain turns into a lamellar domain structure without fractal aspects after short-circuiting the b plate. The atomic displacement associated with polarization reversal is shown in a crystal structure model of 180deg domains observed in the X-ray topography. (author)

Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

KAUST Repository

Chao, Chunying

2012-08-15

Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single-domain structures, whose polarization areas can be manipulated by writing and reading. The nanoplates are also effective catalysts for the oxidation of carbon monoxide. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

International Nuclear Information System (INIS)

Kurchak, Anatolii I.; Eliseev, Eugene A.; Kalinin, Sergei V.; Strikha, Maksym V.; Morozovska, Anna N.

2017-01-01

The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.

Fatigue effect in ferroelectric crystals: Growth of the frozen domains

Science.gov (United States)

Shur, V. Ya.; Akhmatkhanov, A. R.; Baturin, I. S.

2012-06-01

The model of the fatigue effect during cyclic switching caused by growth of the frozen domain area with charged domain walls has been proposed. It was claimed on the basis of the previous experimental results that for switching in increasing field the frozen domain area started to grow at the given sub-threshold field value and stopped at the threshold field. The influence of the shape and frequency of the field pulses used for cyclic switching has been considered. The uniaxial ferroelectric stoichiometric lithium tantalate single crystals produced by vapor transport equilibration with record low value of coercive field have been chosen as a model material for experimental verification of the model. The formation of the charged domain walls as a result of cyclic switching has been revealed by analysis of the domain images obtained by optical and Raman confocal microscopy. It has been shown that the fatigue degree is equal to the fraction of the frozen domain area. The experimental dependence of the switched charge on the cycle number has been successfully fitted by modified Kolmogorov-Avrami formula. The experimentally observed frequency independence of fatigue profile for rectangular pulses and frequency dependence for triangular pulses has been explained by proposed model.

Piezoelectric properties of twinned ferroelectric perovskites with head-to-head and tail-to-tail domain walls

Czech Academy of Sciences Publication Activity Database

Ondrejkovič, Petr; Márton, Pavel; Guennou, Mael; Setter, N.; Hlinka, Jiří

2013-01-01

Roč. 88, č. 2 (2013), "024114-1"-"024114-9" ISSN 1098-0121 Grant - others:7th Framework Programme(XE) 268058 Institutional support: RVO:68378271 Keywords : piezoelectric properties * charged domain walls * domain structure * twinned ferroelectric Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.664, year: 2013 http://link. aps .org/doi/10.1103/PhysRevB.88.024114

Directly patternable high refractive index ferroelectric sol–gel resist

Energy Technology Data Exchange (ETDEWEB)

Garoli, D., E-mail: denis.garoli@iit.it [Istituto Italiano di Tecnologia, Via Morego 16, 16136 Genova (Italy); Della Giustina, G. [Industrial Engineering Department, University of Padova and INSTM, Via Marzolo 9, 35131 Padova (Italy)

2015-08-15

The development of a ferroelectric negative tone sol–gel resist for Ultraviolet (UV) and Electron Beam (EB) lithography is presented. A new system based on Lead Zirconate Titanate (PZT, with formula PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}) was synthesized by sol–gel method. The lithographic performances were investigated and several structures spanning from the micron range down to less than 50 nm have been achieved by UV and EB lithography. The system interaction with UV light and Electron beam was thoroughly characterized by FT-IT spectroscopy. The exposed PZT was annealed at high temperatures in order to study the crystalline phase evolution, the optical constants values and stability of patterned structures. After exposure and annealing, the refractive index of the material can vary from 1.68 up to 2.33 (@400 nm), while the ferroelectric behaviour seems to be maintained after high temperature annealing. These results suggest a possible application of PZT resist not only as ferroelectric but also as nanopatternable high refractive index material. Moreover, direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified and the potentiality for the preparation of high aspect ratio hollow nanostructures will be presented. - Highlights: • A new formula directly patternable PZT high refractive index resist is presented. • The gel is sensitive to both UV and electron beam exposure. • The refractive index can vary from 1.68 up to 2.33 (@400 nm). • Direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified. • High aspect ratio hollow nanostructures will be presented.

Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

Science.gov (United States)

Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

2018-02-01

Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO3

International Nuclear Information System (INIS)

Nataf, Guillaume F.; Guennou, Mael; Haussmann, Alexander; Barrett, Nick; Kreisel, Jens

2016-01-01

The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ferroelectricity driven magnetism at domain walls in LaAlO3/PbTiO3 superlattices

Science.gov (United States)

Zhou, P. X.; Dong, S.; Liu, H. M.; Ma, C. Y.; Yan, Z. B.; Zhong, C. G.; Liu, J. -M.

2015-01-01

Charge dipole moment and spin moment rarely coexist in single-phase bulk materials except in some multiferroics. Despite the progress in the past decade, for most multiferroics their magnetoelectric performance remains poor due to the intrinsic exclusion between charge dipole and spin moment. As an alternative approach, the oxide heterostructures may evade the intrinsic limits in bulk materials and provide more attractive potential to realize the magnetoelectric functions. Here we perform a first-principles study on LaAlO3/PbTiO3 superlattices. Although neither of the components is magnetic, magnetic moments emerge at the ferroelectric domain walls of PbTiO3 in these superlattices. Such a twist between ferroelectric domain and local magnetic moment, not only manifests an interesting type of multiferroicity, but also is possible useful to pursuit the electrical-control of magnetism in nanoscale heterostructures. PMID:26269322

Reversible optical control of macroscopic polarization in ferroelectrics

Science.gov (United States)

Rubio-Marcos, Fernando; Ochoa, Diego A.; Del Campo, Adolfo; García, Miguel A.; Castro, Germán R.; Fernández, José F.; García, José E.

2018-01-01

The optical control of ferroic properties is a subject of fascination for the scientific community, because it involves the establishment of new paradigms for technology1-9. Domains and domain walls are known to have a great impact on the properties of ferroic materials1-24. Progress is currently being made in understanding the behaviour of the ferroelectric domain wall, especially regarding its dynamic control10-12,17,19. New research is being conducted to find effective methodologies capable of modulating ferroelectric domain motion for future electronics. However, the practical use of ferroelectric domain wall motion should be both stable and reversible (rewritable) and, in particular, be able to produce a macroscopic response that can be monitored easily12,17. Here, we show that it is possible to achieve a reversible optical change of ferroelectric domains configuration. This effect leads to the tuning of macroscopic polarization and its related properties by means of polarized light, a non-contact external control. Although this is only the first step, it nevertheless constitutes the most crucial one in the long and complex process of developing the next generation of photo-stimulated ferroelectric devices.

Free-carrier-compensated charged domain walls produced with super-bandgap illumination in insulating ferroelectrics

Czech Academy of Sciences Publication Activity Database

Bednyakov, Petr; Sluka, T.; Tagantsev, A.; Damjanovic, D.; Setter, N.

2016-01-01

Roč. 28, č. 43 (2016), s. 9498-9503 ISSN 0935-9648 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : super-bandgap illumination * charged domain walls * ferroelectric BaTiO 3 * free-carrier generation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 19.791, year: 2016

Imaging Local Polarization in Ferroelectric Thin Films by Coherent X-Ray Bragg Projection Ptychography

Science.gov (United States)

Hruszkewycz, S. O.; Highland, M. J.; Holt, M. V.; Kim, Dongjin; Folkman, C. M.; Thompson, Carol; Tripathi, A.; Stephenson, G. B.; Hong, Seungbum; Fuoss, P. H.

2013-04-01

We used x-ray Bragg projection ptychography (BPP) to map spatial variations of ferroelectric polarization in thin film PbTiO3, which exhibited a striped nanoscale domain pattern on a high-miscut (001) SrTiO3 substrate. By converting the reconstructed BPP phase image to picometer-scale ionic displacements in the polar unit cell, a quantitative polarization map was made that was consistent with other characterization. The spatial resolution of 5.7 nm demonstrated here establishes BPP as an important tool for nanoscale ferroelectric domain imaging, especially in complex environments accessible with hard x rays.

Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Nataf, Guillaume F. [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Guennou, Mael [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Haussmann, Alexander [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, George-Baehr-Str. 1, 01069, Dresden (Germany); Barrett, Nick [Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Kreisel, Jens [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422, Belvaux (Luxembourg)

2016-03-15

The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Functional Properties of Polydomain Ferroelectric Oxide Thin Films

NARCIS (Netherlands)

Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

2017-01-01

The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

Correlation of electron backscatter diffraction and piezoresponse force microscopy for the nanoscale characterization of ferroelectric domains in polycrystalline lead zirconate titanate

Science.gov (United States)

Burnett, T. L.; Weaver, P. M.; Blackburn, J. F.; Stewart, M.; Cain, M. G.

2010-08-01

The functional properties of ferroelectric ceramic bulk or thin film materials are strongly influenced by their nanostructure, crystallographic orientation, and structural geometry. In this paper, we show how, by combining textural analysis, through electron backscattered diffraction, with piezoresponse force microscopy, quantitative measurements of the piezoelectric properties can be made at a scale of 25 nm, smaller than the domain size. The combined technique is used to obtain data on the domain-resolved effective single crystal piezoelectric response of individual crystallites in Pb(Zr0.4Ti0.6)O3 ceramics. The results offer insight into the science of domain engineering and provide a tool for the future development of new nanostructured ferroelectric materials for memory, nanoactuators, and sensors based on magnetoelectric multiferroics.

Dependence of the ferroelectric domain shape on the electric field of the microscope tip

International Nuclear Information System (INIS)

Starkov, Alexander S.; Starkov, Ivan A.

2015-01-01

A theory of an equilibrium shape of the domain formed in an electric field of a scanning force microscope (SFM) tip is proposed. We do not assume a priori that the domain has a fixed form. The shape of the domain is defined by the minimum of the free energy of the ferroelectric. This energy includes the energy of the depolarization field, the energy of the domain wall, and the energy of the interaction between the domain and the electric field of the SFM tip. The contributions of the apex and conical part of the tip are examined. Moreover, in the proposed approach, any narrow tip can be considered. The surface energy is determined on the basis of the Ginzburg-Landau-Devonshire theory and takes into account the curvature of the domain wall. The variation of the free energy with respect to the domain shape leads to an integro-differential equation, which must be solved numerically. Model results are illustrated for lithium tantalate ceramics

Anelastic deformation of Pb(Zr,Ti)O3 thin films by non-180 deg. ferroelectric domain wall movements during nanoindentation

International Nuclear Information System (INIS)

Alguero, M.; Bushby, A.J.; Reece, M.J.; Seifert, A.

2002-01-01

Lead zirconate titanate Pb(Zr,Ti)O 3 ferroelectric thin films show significant anelastic deformation when indented with spherical tipped indenters. Experiments on films with different Zr/Ti ratio and a mixed , preferred crystallographic orientation have shown that there is a good agreement between the anelastic deformation and the maximum strain achievable by non-180 deg. domain wall movement. An expected increase of the indentation stiffness of the films also accompanies the anelastic deformation because of the single crystal elastic anisotropy. All these observations seem to indicate that non-180 deg. ferroelectric domain wall movements occur under indentation stresses and cause anelasticity. Stresses for maximum anelastic deformation are compared with those for recently reported stress-induced depolarization

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

Science.gov (United States)

Buragohain, P.; Richter, C.; Schenk, T.; Lu, H.; Mikolajick, T.; Schroeder, U.; Gruverman, A.

2018-05-01

Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse Force Microscopy (PFM) and pulse switching techniques to study the nanoscopic mechanism of polarization reversal and the wake-up process. It has been directly shown that the main mechanism behind the transformation of the polarization hysteretic behavior and an increase in the remanent polarization value upon the alternating current cycling is electrically induced domain de-pinning. PFM imaging and local spectroscopy revealed asymmetric switching in the La:HfO2 capacitors due to a significant imprint likely caused by the different boundary conditions at the top and bottom interfaces. Domain switching kinetics can be well-described by the nucleation limited switching model characterized by a broad distribution of the local switching times. It has been found that the domain velocity varies significantly throughout the switching process indicating strong interaction with structural defects.

Structural matching of ferroelectric domains and associated distortion in potassium titanyl phosphate crystals

CERN Document Server

Pernot-Rejmankova, P; Cloetens, P; Lyford, T; Baruchel, J

2003-01-01

The surface deformation and atomic-level distortions associated with crystal structural matching at ferroelectric inversion domain walls are investigated in periodically poled potassium titanyl phosphate (KTP) crystals. A deformation, of the order of 10 sup - sup 8 m in scale and having the periodicity of the domains, is observed at the surfaces by optical interferometry. It is discussed in terms of the piezoelectric effect. The matching of the crystal structures at the domain walls is studied by combining the hard x-ray Fresnel phase-imaging technique with Bragg diffraction imaging methods ('Bragg-Fresnel imaging') and using synchrotron radiation. Quantitative analysis of the contrast of the Bragg-Fresnel images recorded as a function of the propagation distance is demonstrated to allow the determination of how the domains are matched at the atomic (unit cell) level, even though the spatial resolution of the images is on the scale of micrometres. The atom P(1) is determined as the linking atom for connecting...

Photoinduced effects of ferroelectric domains in PbZr1-xTixO3 thin films as obtained by using piezoresponse force microscopy

International Nuclear Information System (INIS)

Jang, Y. H.; Kim, C. H.; Hwang, H. J.; Cho, J. H.; Moon, H. B.; Bhang, S. H.

2011-01-01

Piezoresponse force microscopy (PFM) has been used to investigate the photoinduced effect of ferroelectric domains in PbZr 1-x Ti x O 3 (PZT) thin films. In order to perform nondestructive visualization of the high-resolution domain structure, we optimized the imaging condition, such as applying a lower voltage than 1.0 Vpp (peak-to-peak voltage). In this study, domain changes were measured before and after illumination on the surface of PZT films by using an UV light emitting diode (LED) source (λ = 310 nm) with a focusing lens to investigate the influence of the photoinduced carriers on the ferroelectric polarization. In addition, to investigate the photoinduced effects on the domain distribution, we performed histogram of positive and negative domains before and after UV-light illumination. The illumination with UV light resulted in an increase of the positive domain of the out-of-plane mode. Also, a change in the out-of-plane domain distribution was observed before and after UV illumination. The relaxation of photoinduced changes was monitored by repeated scans within a time range of 20 ∼ 60 minutes.

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Science.gov (United States)

Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

2016-10-12

Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

Rewritable ferroelectric vortex pairs in BiFeO3

Science.gov (United States)

Li, Yang; Jin, Yaming; Lu, Xiaomei; Yang, Jan-Chi; Chu, Ying-Hao; Huang, Fengzhen; Zhu, Jinsong; Cheong, Sang-Wook

2017-08-01

Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.

Surface topography and crystal and domain structures of films of ferroelectric copolymer of vinylidene difluoride and trifluoroethylene

Energy Technology Data Exchange (ETDEWEB)

Kochervinskii, V. V., E-mail: kochval@mail.ru [Karpov Institute of Physical Chemistry, Branch (Russian Federation); Kiselev, D. A.; Malinkovich, M. D. [National University of Science and Technology MISiS (Russian Federation); Korlyukov, A. A.; Lokshin, B. V. [Russian Academy of Sciences, Nesmeyanov Institute of Organoelement Compounds (Russian Federation); Volkov, V. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation); Kirakosyan, G. A. [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Pavlov, A. S. [Karpov Institute of Physical Chemistry, Branch (Russian Federation)

2017-03-15

The crystallization of a copolymer from a solution at room temperature is found to lead to the formation of a metastable structure, characterized by the coexistence of ferroelectric and paraelectric phases. The fraction of the latter decreases after annealing above the Curie point. Atomic force microscopy (AFM) has revealed a difference in the surface topographies between the films contacting with air and the films contacting with a glass substrate. The microstructure of copolymer chains has been investigated by {sup 19}F NMR spectroscopy. The chain fragments with “defect” attached monomeric units are ejected to the surface. The character of the ferroelectric domains formed during crystallization and their size distribution are analyzed.

Effect of amino acid doping on the growth and ferroelectric properties of triglycine sulphate single crystals

International Nuclear Information System (INIS)

Raghavan, C.M.; Sankar, R.; Mohan Kumar, R.; Jayavel, R.

2008-01-01

Effect of amino acids (L-leucine and isoleucine) doping on the growth aspects and ferroelectric properties of triglycine sulphate crystals has been studied. Pure and doped crystals were grown from aqueous solution by low temperature solution growth technique. The cell parameter values were found to significantly vary for doped crystals. Fourier transform infrared analysis confirmed the presence of functional groups in the grown crystal. Morphology study reveals that amino acid doping induces faster growth rate along b-direction leading to a wide b-plane and hence suitable for pyroelectric detector applications. Ferroelectric domain structure has been studied by atomic force microscopy and hysteresis measurements reveal an increase of coercive field due to the formation of single domain pattern

Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Energy Technology Data Exchange (ETDEWEB)

Nan, Tianxiang; Emori, Satoru; Wang, Xinjun; Hu, Zhongqiang; Xie, Li; Gao, Yuan; Lin, Hwaider; Sun, Nian, E-mail: n.sun@neu.edu [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Peng, Bin; Liu, Ming, E-mail: mingliu@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, Xi' an Jiaotong University, Xi' an 710049 (China); Jiao, Jie; Luo, Haosu [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Budil, David [Department of Chemistry, Northeastern University, Boston, Massachusetts 02115 (United States); Jones, John G.; Howe, Brandon M.; Brown, Gail J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

2016-01-04

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

Giant electrocaloric effect in a cracked ferroelectrics

Science.gov (United States)

Huang, Cheng; Yang, Hai-Bing; Gao, Cun-Fa

2018-04-01

The electrocaloric effect (ECE) is the temperature change in a material induced by electrical field variation under adiabatic condition. Considering an external electric load applied on a cracked ferroelectric solid, a non-uniform electric field would be induced at the crack tip, and thus, incompatible strain field and local stress concentration would be generated around it. Furthermore, the enormous strain energy and the electrostatic energy would affect the polarization switching of the ferroelectric solid, important for the electrocaloric response. In this paper, the large negative and positive ECEs in a ferroelectric sheet with a conducting crack are investigated by the phase field method with the consideration of time-dependent Ginzburg-Landau equation. The numerical calculations indicated that the polarization field generates a sharp rise during the domain transition from polydomain to monodomain under a certain electric load. Large negative ECEs, about -10.21 K and -7.55 K, are obtained at 135 °C and 85 °C, respectively. The domain transition temperature is much lower than the Curie temperature, which enlarges the existence scope of the large ECE in ferroelectrics. The results also imply that the domain transition from a multi-domain state to a single domain takes place with the minimization of total free energy, which involves the courses of the electric field, stress field, temperature, and polarization interaction. Therefore, the non-uniform distributions of the stress-electric fields induced by the crack play an important role in ECE.

Stress effects in ferroelectric perovskite thin-films

Science.gov (United States)

Zednik, Ricardo Johann

The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

Cross-sectional analysis of ferroelectric domains in PZT capacitors via piezoresponse force microscopy

Energy Technology Data Exchange (ETDEWEB)

Liu, J S [School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang City (China); Zeng, H Z [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Kholkin, A L [Department of Ceramic and Glass Engineering and CICECO, University of Aveiro, Aveiro 3810-193 (Portugal)

2007-11-21

Ferroelectric domains have been investigated on the cross-section of Pb(Zr{sub 0.55}Ti{sub 0.45})O{sub 3} (PZT) thin film capacitors by scanning probe microscopy. The static domain images on the cross-section were obtained by the lateral piezoresponse force microscopy (LPFM) method, in which the ac voltage used to induce the converse piezoelectric effect was applied between the conductive tip and the bottom electrode. The polarization component normal to the substrate could be characterized via both d{sub 33} and d{sub 15} piezoelectric coefficients, which resulted in a high resolution of LPFM images. After a variable dc bias was applied between the top and the bottom electrodes, the variations of domain image on the cross-section were recorded by the LPFM immediately. Upon the application of low bias, new domain sites appeared near the PZT/Pt interface opposite to the initial polarization. Forward stretch of new domains was facilitated under the dc field approaching the coercive field E{sub c}. Under a very high field (about three times of the E{sub c}), the sidewise expansion of columnar domains was observed. However, the domains were only partially switched even though a very high field was applied. The observed domain growth process indicated a lower energy barrier for nucleation compared with that of domain wall motion. Possible reasons for the incomplete switching are the substantial influences of the interface and depolarization in thin film capacitors.

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO{sub 2}-based thin films

Energy Technology Data Exchange (ETDEWEB)

Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2016-04-07

Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO{sub 1.5}-0.93HfO{sub 2} films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal–orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO{sub 2}-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O{sub 3} and BiFeO{sub 3}.

Monte Carlo simulations for describing the ferroelectric-relaxor crossover in BaTiO3-based solid solutions

International Nuclear Information System (INIS)

Padurariu, Leontin; Enachescu, Cristian; Mitoseriu, Liliana

2011-01-01

The properties induced by the M 4+ addition (M = Zr, Sn, Hf) in BaM x Ti 1-x O 3 solid solutions have been described on the basis of a 2D Ising-like network and Monte Carlo calculations, in which BaMO 3 randomly distributed unit cells were considered as being non-ferroelectric. The polarization versus temperature dependences when increasing the M 4+ concentration (x) showed a continuous reduction of the remanent polarization and of the critical temperature corresponding to the ferroelectric-paraelectric transition and a modification from a first-order to a second-order phase transition with a broad temperature range for which the transition takes place, as commonly reported for relaxors. The model also describes the system's tendency to reduce the polar clusters' average size while increasing their stability in time at higher temperatures above the Curie range, when a ferroelectric-relaxor crossover is induced by increasing the substitution (x). The equilibrium micropolar states during the polarization reversal process while describing the P(E) loops were comparatively monitored for the ferroelectric (x = 0) and relaxor (x = 0.3) states. Polarization reversal in relaxor compositions proceeds by the growth of several nucleated domains (the 'labyrinthine domain pattern') instead of the large scale domain formation typical for the ferroelectric state. The spatial and temporal evolution of the polar clusters in BaM x Ti 1-x O 3 solid solutions at various x has also been described by the correlation length and correlation time. As expected for the ferroelectric-relaxor crossover characterized by a progressive increasing degree of disorder, local fluctuations cause a reducing correlation time when the substitution degree increases, at a given temperature. The correlation time around the Curie temperature increases, reflecting the increasing stability in time of some polar nanoregions in relaxors in comparison with ferroelectrics, which was experimentally proved in

Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications

Science.gov (United States)

Sun, Enwei; Cao, Wenwu

2014-01-01

In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth

Interrelation between domain structures and polarization switching in hybrid improper ferroelectric Ca3(Mn,Ti)2O7

Science.gov (United States)

Gao, Bin; Huang, Fei-Ting; Wang, Yazhong; Kim, Jae-Wook; Wang, Lihai; Lim, Seong-Joon; Cheong, Sang-Wook

2017-05-01

Ca3Mn2O7 and Ca3Ti2O7 have been proposed as the prototypical hybrid improper ferroelectrics (HIFs), and a significant magnetoelectric (ME) coupling in magnetic Ca3Mn2O7 is, in fact, reported theoretically and experimentally. Although the switchability of polarization is confirmed in Ca3Ti2O7 and other non-magnetic HIFs, there is no report of switchable polarization in the isostructural Ca3Mn2O7. We constructed the phase diagram of Ca3Mn2-xTixO7 through our systematic study of a series of single crystalline Ca3Mn2-xTixO7 (x = 0, 0.1, 1, 1.5, and 2). Using transmission electron microscopy, we have unveiled the unique domain structure of Ca3Mn2O7: the high-density 90° stacking of a- and b-domains along the c-axis due to the phase transition through an intermediate Acca phase and the in-plane irregular wavy ferroelastic twin domains. The interrelation between domain structures and physical properties is unprecedented: the stacking along the c-axis prevents the switching of polarization and causes the irregular in-plane ferroelastic domain pattern. In addition, we have determined the magnetic phase diagram and found complex magnetism of Ca3Mn2O7 with isotropic canted moments. These results lead to negligible observable ME coupling in Ca3Mn2O7 and guide us to explore multiferroics with large ME coupling.

The effect of the ferroelectric domain walls in the scanning near field optical microscopy response of periodically poled Ba2NaNb5O15 and LiNbO3 crystals

International Nuclear Information System (INIS)

Han, T P J; Jaque, F; Lamela, J; Jaque, D; Lifante, G; Cusso, F; Kamiskii, A A

2009-01-01

A study of Ba 2 NaNb 5 O 15 and LiNbO 3 crystals with periodic ferroelectric domain structures using the scanning near field optical microscopy technique is reported. Optical contrast is observed in the regions of ferroelectric domain boundaries and it is analysed using beam propagation method modelling. This reveals that the optical contrast, a consequence of changes in the refractive index, is not due to variation of the waveguide-coupling efficiency, and supports the hypothesis that it is associated with the domain array, which is related to the size of the domain. (fast track communication)

Study of the mapping mechanism of ferroelectric domains with the scanning force microscope

International Nuclear Information System (INIS)

Jungk, T.

2006-12-01

The piezo-force microscopy (PFM) allows the mapping of ferroelectric domains until the nanometer range. In spite of its simple function principle it was hitherto not completely understood. In ordser to develop the PFM further to a quantitative analysis method its methodical aspects were analyzed. It was shown that the fundamental mapping mechanism is based on the inverse piezo-effect. Different artefacts to be found in the literature could therefore be reduced to a measurement background. Furthermore the influence of the electrode geometry was analyzed. The width of doamin walls was systematically measured and simulated with a mode, whereby a maximal resolution of 17 nm was reached. By the development of a correction procedure for the exact detection of the forces acting on the spring-beam the lateral signals measured on domain walls could by newly interpreted. So the ''Lateral Electrostatic Force Microscopy'' was developed

Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

Energy Technology Data Exchange (ETDEWEB)

Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Ivanov, Ilia N. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia, E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2015-12-14

Controlling ferroelectric switching in Mg doped lithium niobate (Mg:LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg:LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the “up” to the “down” state increases with increasing thickness in pure Mg:LN, whereas the voltage required for stable back switching to the original “up” state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg:LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg:LN layer above due to the presence of uncompensated polarization charge at the PE-Mg:LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg:LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.

Image plane digital holographic microscope for the inspection of ferroelectric single crystals.

Czech Academy of Sciences Publication Activity Database

Psota, Pavel; Mokrý, Pavel; Lédl, Vít; Vojtíšek, Petr

2016-01-01

Roč. 55, č. 12 (2016), č. článku 121731. ISSN 0091-3286 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : Digital holography * barium titanate * domain pattern * ferroelectric crystals * holographic microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.082, year: 2016 http://dx.doi.org/10.1117/1.OE.55.12.121731

Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation

Science.gov (United States)

Scott, J. F.; Hershkovitz, A.; Ivry, Y.; Lu, H.; Gruverman, A.; Gregg, J. M.

2017-12-01

Recent experimental work shows that ferroelectric switching can occur in large jumps in which ferroelastic superdomains switch together, rather than having the numerous smaller ferroelectric domains switch within them. In this sense, the superdomains play a role analogous to that of Abrikosov vortices in thin superconducting films under the Kosterlitz-Thouless framework, which control the dynamics more than individual Cooper pairs within them do. Here, we examine the dynamics of ferroelastic superdomains in ferroelastic ferroelectrics and their role in switching devices such as memories. Jamming of ferroelectric domains in thin films has revealed an unexpected time dependence of t-1/4 at long times (hours), but it is difficult to discriminate between power-law and exponential relaxation. Other aspects of this work, including spatial period doubling of domains, led to a description of ferroelastic domains as nonlinear processes in a viscoelastic medium, which produce folding and metastable kinetically limited states. This ¼ exponent is a surprising agreement with the well-known value of ¼ for coarsening dynamics in viscoelastic media. We try to establish a link between these two processes, hitherto considered unrelated, and with superdomains and domain bundles. We note also that high-Tc superconductors share many of the ferroelastic domain properties discussed here and that several new solar cell materials and metal-insulator transition systems are ferroelastic.

Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

KAUST Repository

Hu, Weijin

2014-04-24

In this work, switching dynamics of poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 ...MV/m and 180 domain wall energy of 60 ...mJ/m 2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.

Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

KAUST Repository

Hu, Weijin; Juo, Deng-Ming; You, Lu; Wang, Junling; Chen, Yi-Chun; Chu, Ying-Hao; Wu, Tao

2014-01-01

In this work, switching dynamics of poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 ...MV/m and 180 domain wall energy of 60 ...mJ/m 2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.

Influence of Bias on the Friction Imaging of Ferroelectric Domains in Single Crystal Barium Titanate Energy Storage Materials

Directory of Open Access Journals (Sweden)

Lan Chen

2014-01-01

Full Text Available The friction imaging of newlycleaved surface domains of single crystal BaTiO3 energy storage materials under both positive and negative voltage bias is investigated by scanning force microscope. When the bias was applied and reversed, three regions with different brightness and contrast in friction image indicated different response to the biases: the friction image of domain A displayed a great change in brightness while domains B and C displayed only a very small change. Possible mechanisms of the interesting phenomena originating from different static force between different charged tip and the periodical array of surface charges inside the inplane domains were proposed. These results provide a new method for the determination of the polarization direction for the domain parallel to the surface and may be useful in the investigation of ferroelectric energy storage materials, especially the relationship between the polarization direction of domain and the bias.

Subcritical switching dynamics and humidity effects in nanoscale studies of domain growth in ferroelectric thin films

International Nuclear Information System (INIS)

Blaser, Cédric; Paruch, Patrycja

2015-01-01

Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr 0.2 Ti 0.8 )O 3 thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28–65% range. We map out the switched domain size as a function of both the tip bias and the applied pulse time and describe a growth-limited regime for very short pulses and a nucleation-limited regime for very low tip bias. Using ‘interrupted-switching’ measurements, we probe the nucleation regime with subcritical pulses and identify a surprisingly long relaxation time on the order of 100 ms, which we relate to ionic redistribution both on the surface and within the thin film itself. (paper)

Acoustic emission mechanism at switching of ferroelectric crystals

International Nuclear Information System (INIS)

Belov, V.V.; Morozova, G.P.; Serdobol'skaya, O.Yu.

1986-01-01

Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO

Acoustic emission mechanism at switching of ferroelectric crystals

Energy Technology Data Exchange (ETDEWEB)

Belov, V V; Morozova, G P; Serdobol' skaya, O Yu

1986-01-01

Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO.

Identification of defect distribution at ferroelectric domain walls from evolution of nonlinear dielectric response during the aging process

Czech Academy of Sciences Publication Activity Database

Mokrý, Pavel; Sluka, T.

2016-01-01

Roč. 93, č. 6 (2016), č. článku 064114. ISSN 2469-9950 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : Nonlinear dielectric response * ferroelectric domain walls * aging process * phase field simulations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016 http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.064114

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

Science.gov (United States)

Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

2018-05-01

Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

Energy Technology Data Exchange (ETDEWEB)

Guan, Yan; Liu, Xiaohua [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian (China); Zhou, Dayu [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China); Mueller, Johannes [Fraunhofer IPMS-CNT, Dresden (Germany); Schenk, Tony; Schroeder, Uwe [NaMLab gGmbH/TU Dresden (Germany)

2015-10-15

A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO{sub 2} thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO{sub 2} thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Guan, Yan; Liu, Xiaohua; Zhou, Dayu; Xu, Jin; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

2015-01-01

A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO 2 thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO 2 thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Study of mechanically stimulated ferroelectric domain formation using scanning probe microscope

Energy Technology Data Exchange (ETDEWEB)

Kim, J H; Baek, J; Khim, Z G [School of Physics and Nano-Systems Institute, Seoul National University, Seoul 151-747 (Korea, Republic of)

2007-03-15

The stress-related ferroelectric properties have been studied on the Triglycine sulfate (TGS) by scanning probe microscope (SPM). Together with normal stress of the tip, the lateral stress is applied to the sample with piezoelectric transducers. With this study, we characterized the way the ferroelectricity of TGS responds to the axis-specific stress. Specially, the b-directional stress applicable to the surface can amount to several GPa such that the polarization switching by mechanical stress is observable. Although the lateral stress is not strong enough to view such phenomena, a-axis(c-axis) stress still affects the polarization value so as to fortify (lessen) the electric field inside, respectively. These contrasting results can be explained by the sign relation of piezo-coefficients about the individual axis. This work can be a touchstone of future researches in characterizing the electromechanical properties of more popular ferroelectrics such as PZT or BTO.

Morphology-dependent photo-induced polarization recovery in ferroelectric thin films

Science.gov (United States)

Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.

2017-08-01

We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

Energy Technology Data Exchange (ETDEWEB)

Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing (Penn); (Xian Jiaotong); (CIW); (Simon); (TRS Techn); (Wollongong)

2016-12-19

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals.

Science.gov (United States)

Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R; Chen, Long-Qing

2016-12-19

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50-80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

Science.gov (United States)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

Energy Technology Data Exchange (ETDEWEB)

Guo, Hanzheng [Iowa State Univ., Ames, IA (United States)

2014-12-15

Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some wellaccepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated.

Ferroelectricity in high-density H{sub 2}O ice

Energy Technology Data Exchange (ETDEWEB)

Caracas, Razvan, E-mail: razvan.caracas@ens-lyon.fr, E-mail: rhemley@ciw.edu [CNRS, Laboratoire de Géologie de Lyon UMR5276, Ecole Normale Supérieure de Lyon, 46, alleé d’Italie, Université Claude-Bernard Lyon 1, Université de Lyon, 69364 Lyon cedex 07 (France); Hemley, Russell J., E-mail: razvan.caracas@ens-lyon.fr, E-mail: rhemley@ciw.edu [Geophysical Laboratory, 5251 Broad Branch Road NW, Carnegie Institution of Washington, Washington, DC 20015 (United States)

2015-04-07

The origin of longstanding anomalies in experimental studies of the dense solid phases of H{sub 2}O ices VII, VIII, and X is examined using a combination of first-principles theoretical methods. We find that a ferroelectric variant of ice VIII is energetically competitive with the established antiferroelectric form under pressure. The existence of domains of the ferroelectric form within anti-ferroelectric ice can explain previously observed splittings in x-ray diffraction data. The ferroelectric form is stabilized by density and is accompanied by the onset of spontaneous polarization. The presence of local electric fields triggers the preferential parallel orientation of the water molecules in the structure, which could be stabilized in bulk using new high-pressure techniques.

Non-Resonant Magnetoelectric Energy Harvesting Utilizing Phase Transformation in Relaxor Ferroelectric Single Crystals

Directory of Open Access Journals (Sweden)

Peter Finkel

2015-12-01

Full Text Available Recent advances in phase transition transduction enabled the design of a non-resonant broadband mechanical energy harvester that is capable of delivering an energy density per cycle up to two orders of magnitude larger than resonant cantilever piezoelectric type generators. This was achieved in a [011] oriented and poled domain engineered relaxor ferroelectric single crystal, mechanically biased to a state just below the ferroelectric rhombohedral (FR-ferroelectric orthorhombic (FO phase transformation. Therefore, a small variation in an input parameter, e.g., electrical, mechanical, or thermal will generate a large output due to the significant polarization change associated with the transition. This idea was extended in the present work to design a non-resonant, multi-domain magnetoelectric composite hybrid harvester comprised of highly magnetostrictive alloy, [Fe81.4Ga18.6 (Galfenol or TbxDy1-xFe2 (Terfenol-D], and lead indium niobate–lead magnesium niobate–lead titanate (PIN-PMN-PT domain engineered relaxor ferroelectric single crystal. A small magnetic field applied to the coupled device causes the magnetostrictive element to expand, and the resulting stress forces the phase change in the relaxor ferroelectric single crystal. We have demonstrated high energy conversion in this magnetoelectric device by triggering the FR-FO transition in the single crystal by a small ac magnetic field in a broad frequency range that is important for multi-domain hybrid energy harvesting devices.

Critical dynamics and domain motion from permittivity of the electronic ferroelectric (TMTTF){sub 2}AsF{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Brazovskii, Serguei, E-mail: brazov@lptms.u-psud.fr [LPTMS, UMR8626, CNRS & University Paris-Sud, Bat. 100, Orsay F-91405 (France); International Institute of Physics, 59078-400 Natal, Rio Grande do Norte (Brazil); Monceau, Pierre [CNRS & University Grenoble Alpes, Institute NEEL, F-38042 Grenoble (France); Nad, Felix Ya.

2015-03-01

The quasi one-dimensional organic conductor (TMTTF){sub 2}AsF{sub 6} shows the charge ordering transition at T{sub CO}=101 K to a state of the ferroelectric Mott insulator which is still well conducting. We present and interpret the experimental data on the gigantic dielectric response in the vicinity of T{sub CO}, concentrating on the frequency dependence of the inverse 1/ε of the complex permittivity ε=ε′+iε′′. Surprisingly for a ferroelectric, we could closely approach the 2nd order phase transition and to deeply reach the critical dynamics of the polarization. We could analyze the critical slowing-down when approaching T{sub CO} from both sides and to extract the anomalous power law for the frequency dependence of the order parameter viscosity. Moreover, below T{sub CO} we could extract a sharp absorption feature coming from a motion of domain walls which shows up at a frequency well below the relaxation rate.

Flexoelectricity: strain gradient effects in ferroelectrics

Energy Technology Data Exchange (ETDEWEB)

Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

2007-12-15

Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

International Nuclear Information System (INIS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-01-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO 3 ) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000 deg. C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO 3 , producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN/GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO 3 modulators on compact optoelectronic/electronic chips

Domain knowledge patterns in pedagogical diagnostics

Science.gov (United States)

Miarka, Rostislav

2017-07-01

This paper shows a proposal of representation of knowledge patterns in RDF(S) language. Knowledge patterns are used for reuse of knowledge. They can be divided into two groups - Top-level knowledge patterns and Domain knowledge patterns. Pedagogical diagnostics is aimed at testing of knowledge of students at primary and secondary school. An example of domain knowledge pattern from pedagogical diagnostics is part of this paper.

Reconstruction of the domain orientation distribution function of polycrystalline PZT ceramics using vector piezoresponse force microscopy.

Science.gov (United States)

Kratzer, Markus; Lasnik, Michael; Röhrig, Sören; Teichert, Christian; Deluca, Marco

2018-01-11

Lead zirconate titanate (PZT) is one of the prominent materials used in polycrystalline piezoelectric devices. Since the ferroelectric domain orientation is the most important parameter affecting the electromechanical performance, analyzing the domain orientation distribution is of great importance for the development and understanding of improved piezoceramic devices. Here, vector piezoresponse force microscopy (vector-PFM) has been applied in order to reconstruct the ferroelectric domain orientation distribution function of polished sections of device-ready polycrystalline lead zirconate titanate (PZT) material. A measurement procedure and a computer program based on the software Mathematica have been developed to automatically evaluate the vector-PFM data for reconstructing the domain orientation function. The method is tested on differently in-plane and out-of-plane poled PZT samples, and the results reveal the expected domain patterns and allow determination of the polarization orientation distribution function at high accuracy.

Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

Science.gov (United States)

Maslovskaya, A. G.; Barabash, T. K.

2018-03-01

The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Science.gov (United States)

Lee, Jung-Kun; Nastasi, Michael

2012-11-01

The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

Science.gov (United States)

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

Science.gov (United States)

Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

2016-12-01

With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

CuInP₂S₆ Room Temperature Layered Ferroelectric.

Science.gov (United States)

Belianinov, A; He, Q; Dziaugys, A; Maksymovych, P; Eliseev, E; Borisevich, A; Morozovska, A; Banys, J; Vysochanskii, Y; Kalinin, S V

2015-06-10

We explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V-likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. The existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing "graphene family".

Dynamic processes of domain switching in lead zirconate titanate under cyclic mechanical loading by in situ neutron diffraction

International Nuclear Information System (INIS)

Pojprapai, Soodkhet; Luo, Zhenhua; Clausen, Bjorn; Vogel, Sven C.; Brown, Donald W.; Russel, Jennifer; Hoffman, Mark

2010-01-01

The performance of ferroelectric ceramics is governed by the ability of domains to switch. A decrease in the switching ability can lead to degradation of the materials and failure of ferroelectric devices. In this work the dynamic properties of domain reorientation are studied. In situ time-of-flight neutron diffraction is used to probe the evolution of ferroelastic domain texture under mechanical cyclic loading in bulk lead zirconate titanate ceramics. The high sensitivity of neutron diffraction to lattice strain is exploited to precisely analyze the change of domain texture and strain through a full-pattern Rietveld method. These results are then used to construct a viscoelastic model, which explains the correlation between macroscopic phenomena (i.e. creep and recovered deformation) and microscopic dynamic behavior (i.e. ferroelastic switching, lattice strain).

Anti-parallel polarization switching in a triglycine sulfate organic ferroelectric insulator: The role of surface charges

Science.gov (United States)

Ma, He; Wu, Zhuangchun; Peng, Dongwen; Wang, Yaojin; Wang, Yiping; Yang, Ying; Yuan, Guoliang

2018-04-01

Four consecutive ferroelectric polarization switchings and an abnormal ring-like domain pattern can be introduced by a single tip bias of a piezoresponse force microscope in the (010) triglycine sulfate (TGS) crystal. The external electric field anti-parallel to the original polarization induces the first polarization switching; however, the surface charges of TGS can move toward the tip location and induce the second polarization switching once the tip bias is removed. The two switchings allow a ring-like pattern composed of the central domain with downward polarization and the outer domain with upward polarization. Once the two domains disappear gradually as a result of depolarization, the other two polarization switchings occur one by one at the TGS where the tip contacts. However, the backswitching phenomenon does not occur when the external electric field is parallel to the original polarization. These results can be explained according to the surface charges instead of the charges injected inside.

Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

Energy Technology Data Exchange (ETDEWEB)

Aggarwal, Leena; Sekhon, Jagmeet S.; Arora, Ashima; Sheet, Goutam, E-mail: goutam@iisermohali.ac.in [Department of Physical Sciences, Indian Institute of Science Education and Research Mohali (IISER M), Sector 81, S. A. S. Nagar, Manauli PO-140306 (India); Guin, Satya N.; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka, E-mail: kanishka@jncasr.ac.in [New Chemistry Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore 560064 (India)

2014-09-15

It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe{sub 2} has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe{sub 2} crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm–3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe{sub 2} and gives rise to the observed ferroelectricity. Stereochemically active 5S{sup 2} lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe{sub 2}.

Static negative capacitance of a ferroelectric nano-domain nucleus.

Czech Academy of Sciences Publication Activity Database

Sluka, T.; Mokrý, Pavel; Setter, N.

2017-01-01

Roč. 111, č. 15 (2017), č. článku 152902. ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : Ferroelectric materials * Capacitors * Bipolar transistors * Electrodes * Dielectrics Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.411, year: 2016

Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

2017-05-03

This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

Spin-driven ferroelectricity and magneto-electric effects in frustrated magnetic systems

International Nuclear Information System (INIS)

Arima, Taka-hisa

2011-01-01

The interplay between magnetism and electricity in matter has become a central issue of condensed-matter physics. This review focuses on the ferroelectricity induced by magnetic order mostly in frustrated magnets, which is nowadays referred to as magneto-electric (ME) multiferroic, or often only as multiferroic. Some distinct types of microscopic origins relevant to the spin-driven ferroelectricity are discussed in detail. Then one sees that the frustration-based spin-driven ferroelectrics can exhibit nonlinear and giant ME responses of phase-transition type and of domain-control type, in contrast to the conventional magnetoelectrics hosting linear ME effects. (author)

Wall thickness dependence of the scaling law for ferroic stripe domains

International Nuclear Information System (INIS)

Catalan, G; Scott, J F; Schilling, A; Gregg, J M

2007-01-01

The periodicity of 180 0 stripe domains as a function of crystal thickness scales with the width of the domain walls, both for ferroelectric and for ferromagnetic materials. Here we derive an analytical expression for the generalized ferroic scaling factor and use this to calculate the domain wall thickness and gradient coefficients (exchange constants) in some ferroelectric and ferromagnetic materials. We then use these to discuss some of the wider implications for the physics of ferroelectric nanodevices and periodically poled photonic crystals. (fast track communication)

Proceedings of the 8th International Symposium on Applications of Ferroelectrics

Science.gov (United States)

Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

1993-02-01

The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

Ferroelectric InMnO{sub 3}: Growth of single crystals, structure and high-temperature phase transitions

Energy Technology Data Exchange (ETDEWEB)

Bekheet, Maged F., E-mail: maged.bekheet@ceramics.tu-berlin.de [Fachbereich Material‐ und Geowissenschaften, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt (Germany); Fachgebiet Keramische Werkstoffe / Chair of Advanced Ceramic Materials, Institut für Werkstoffwissenschaften und -technologien, Technische Universität Berlin, Hardenbergstraße 40, 10623 Berlin (Germany); Svoboda, Ingrid; Liu, Na [Fachbereich Material‐ und Geowissenschaften, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt (Germany); Bayarjargal, Lkhamsuren [Institut für Geowissenschaften, Goethe-Universität, Altenhöferallee 1, d-60438 Frankfurt a.M. (Germany); Irran, Elisabeth [Institut für Chemie, Technische Universität Berlin, Straße des 17, Juni 135, 10623 Berlin (Germany); Dietz, Christian; Stark, Robert W.; Riedel, Ralf [Fachbereich Material‐ und Geowissenschaften, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt (Germany); Gurlo, Aleksander [Fachgebiet Keramische Werkstoffe / Chair of Advanced Ceramic Materials, Institut für Werkstoffwissenschaften und -technologien, Technische Universität Berlin, Hardenbergstraße 40, 10623 Berlin (Germany)

2016-09-15

To understand the origin of the ferroelectricity in InMnO{sub 3}, single crystals with average size of 1 mm were grown in PbF{sub 2} flux at 950 °C. The results of single crystal X-ray diffraction, second harmonic generation and piezoresponse force microscopy studies of high-quality InMnO{sub 3} single crystals reveal that the room-temperature state in this material is ferroelectric with P6{sub 3}cm symmetry. The polar InMnO{sub 3} specimen undergoes a reversible phase transition from non-centrosymmetric P6{sub 3}cm structure to a centrosymmetric P6{sub 3}/mmc structure at 700 °C as confirmed by the in situ high-temperature Raman spectroscopic and synchrotron X-ray diffraction experiments. - Graphical abstract: Piezoresponse fore microscopy (PFM) studies of high quality InMnO{sub 3} single crystal revealed that the room-temperature state of this material is ferroelectric with a clear cloverleaf pattern corresponding to six antiphase ferroelectric domains with alternating polarization ±P{sub z}. Display Omitted - Highlights: • InMnO{sub 3} single crystals with average size of 1 mm were grown in PbF{sub 2} flux at 950 °C. • The room-temperature state of InMnO{sub 3} is ferroelectric with polar P6{sub 3}cm structure. • PolarInMnO{sub 3} reversibly transforms to a centrosymmetric P6{sub 3}/mmc structure above 700 °C.

The relative contribution of ferroelastic and ferroelectric texture to the character of a hard PZT ceramic

Science.gov (United States)

Key, Thomas Stallings

The development of ferroelastic (90°) texture in addition to ferroelectric (180°) texture is essential to maximizing the piezoelectric properties of many hard tetragonal PZTs, including Piezoetechnologies K270. Ferroelastic texture results from motion of domain walls that is dependent on an individual crystals orientation. Increases in ferroelastic texture raises the maximum net polarization that can be achieved by changes in ferroelectric texture. By studying a hard PZT poled under various temperature conditions, insight was gained into factors affecting the development of ferroelastic texture and how ferroelastic texture contributes to piezoelectric properties. Depinning proved to be the major barrier to preventing ferroelastic domain wall motion where strain based domain interactions and polar defect complexes on the domain level appear to be the dominant factors. Insight into the affect of increased domain texture on the relationship between the increasing magnitude of the remnant polarization (|Pr|) and the magnitude of the coercive field (|EC|) was gained by plotting |EC| vs. |Pr| as a function of poling time for a variety of poling temperatures. At low |Pr| values, |EC| increased rapidly as a function of increases in |Pr| regardless of the poling temperature. This relationship was characteristic of samples poled at 25 °C where increases in ferroelastic texture were largely suppressed. Because increases in polarization were still observable changes in ferroelectric texture most responsible for the polarization increase and like play a strong role in the initial |EC| vs. |Pr| relationship. As |Pr| increased beyond 5 to 8 iC/cm2, the slope of |EC| vs. |Pr| decreased where the reduction in slope increased with poling temperature. This only occurred in samples poled at elevated temperatures where ferroelastic texture was know to ultimately develop during the poling process, leading to the suggestion that the change in slope was due to increases in combined

Self-assembled domain structures: From micro- to nanoscale

Directory of Open Access Journals (Sweden)

Vladimir Shur

2015-06-01

Full Text Available The recent achievements in studying the self-assembled evolution of micro- and nanoscale domain structures in uniaxial single crystalline ferroelectrics lithium niobate and lithium tantalate have been reviewed. The results obtained by visualization of static domain patterns and kinetics of the domain structure by different methods from common optical microscopy to more sophisticated scanning probe microscopy, scanning electron microscopy and confocal Raman microscopy, have been discussed. The kinetic approach based on various nucleation processes similar to the first-order phase transition was used for explanation of the domain structure evolution scenarios. The main mechanisms of self-assembling for nonequilibrium switching conditions caused by screening ineffectiveness including correlated nucleation, domain growth anisotropy, and domain–domain interaction have been considered. The formation of variety of self-assembled domain patterns such as fractal-type, finger and web structures, broad domain boundaries, and dendrites have been revealed at each of all five stages of domain structure evolution during polarization reversal. The possible applications of self-assembling for micro- and nanodomain engineering were reviewed briefly. The review covers mostly the results published by our research group.

Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

International Nuclear Information System (INIS)

Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

2014-01-01

Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

p\text{-}n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

Energy Technology Data Exchange (ETDEWEB)

Kurchak, Anatolii I. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Eliseev, Eugene A. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Strikha, Maksym V. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Taras Shevchenko Kyiv National Univ., Kyiv (Ukraine); Morozovska, Anna N. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)

2017-08-30

The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.

Simulation of fatigue damage in ferroelectric polycrystals under mechanical/electrical loading

Science.gov (United States)

Kozinov, S.; Kuna, M.

2018-07-01

The reliability of smart-structures made of ferroelectric ceramics is essentially reduced by the formation of cracks under the action of external electrical and/or mechanical loading. In the current research a numerical model for low-cycle fatigue in ferroelectric mesostructures is proposed. In the finite element simulations a combination of two user element routines is utilized. The first one is used to model a micromechanical ferroelectric domain switching behavior inside the grains. The second one is used to simulate fatigue damage of grain boundaries by a cohesive zone model (EMCCZM) based on an electromechanical cyclic traction-separation law (TSL). For numerical simulations a scanning electron microscope image of the ceramic's grain structure was digitalized and meshed. The response of this mesostructure to cyclic electrical or mechanical loading is systematically analyzed. As a result of the simulations, the distribution of electric potential, field, displacement and polarization as well as mechanical stresses and deformations inside the grains are obtained. At the grain boundaries, the formation and evolution of damage are analyzed until final failure and induced degradation of electric permittivity. It is found that the proposed model correctly mimics polycrystalline behavior during poling processes and progressive damage under cyclic electromechanical loading. To the authors' knowledge, it is the first model and numerical analysis of ferroelectric polycrystals taking into account both domain reorientation and cohesive modeling of intergranular fracture. It can help to understand failure mechanisms taking place in ferroelectrics during fatigue processes.

Phase transitions and domain structures in multiferroics

Science.gov (United States)

Vlahos, Eftihia

2011-12-01

Thin film ferroelectrics and multiferroics are two important classes of materials interesting both from a scientific and a technological prospective. The volatility of lead and bismuth as well as environmental issues regarding the toxicity of lead are two disadvantages of the most commonly used ferroelectric random access memory (FeRAM) materials such as Pb(Zr,Ti)O3 and SrBi2Ta2O9. Therefore lead-free thin film ferroelectrics are promising substitutes as long as (a) they can be grown on technologically important substrates such as silicon, and (b) their T c and Pr become comparable to that of well established ferroelectrics. On the other hand, the development of functional room temperature ferroelectric ferromagnetic multiferroics could lead to very interesting phenomena such as control of magnetism with electric fields and control of electrical polarization with magnetic fields. This thesis focuses on the understanding of material structure-property relations using nonlinear optical spectroscopy. Nonlinear spectroscopy is an excellent tool for probing the onset of ferroelectricity, and domain dynamics in strained ferroelectrics and multiferroics. Second harmonic generation was used to detect ferroelectricity and the antiferrodistortive phase transition in thin film SrTiO3. Incipient ferroelectric CaTiO3 has been shown to become ferroelectric when strained with a combination of SHG and dielectric measurements. The tensorial nature of the induced nonlinear polarization allows for probing of the BaTiO3 and SrTiO3 polarization contributions in nanoscale BaTiO3/SrTiO3 superlattices. In addition, nonlinear optics was used to demonstrate ferroelectricity in multiferroic EuTiO3. Finally, confocal SHG and Raman microscopy were utilized to visualize polar domains in incipient ferroelectric and ferroelastic CaTiO3.

Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

KAUST Repository

Chao, Chunying; Ren, Zhaohui; Zhu, Yihan; Xiao, Zhen; Liu, Zhenya; Xú , Gang; Mai, Jiangquan; Li, Xiang; Shen, Ge; Han, Gaorong

2012-01-01

Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single

Quantum switching of polarization in mesoscopic ferroelectrics

International Nuclear Information System (INIS)

Sa de Melo, C.A.

1996-01-01

A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Energy Technology Data Exchange (ETDEWEB)

Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)

2014-08-14

Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

Phase-Field Simulations of Topological Structures and Topological Phase Transitions in Ferroelectric Oxide Heterostructures

Science.gov (United States)

Zijian Hong

Ferroelectrics are materials that exhibit spontaneous electric polarization which can be switched between energy-degenerated states by external stimuli (e.g., mechanical force and electric field) that exceeds a critical value. They have wide potential applications in memories, capacitors, piezoelectric and pyroelectric sensors, and nanomechanical systems. Topological structures and topological phase transitions have been introduced to the condensed matter physics in the past few decades and have attracted broad attentions in various disciplines due to the rich physical insights and broad potential applications. Ferromagnetic topological structures such as vortex and skyrmion are known to be stabilized by the antisymmetric chiral interaction (e.g., Dzyaloshinskii-Moriya interaction). Without such interaction, ferroelectric topological structures (i.e., vortex, flux-closure, skyrmions, and merons) have been studied only recently with other designing strategies, such as reducing the dimension of the ferroelectrics. The overarching goal of this dissertation is to investigate the topological structures in ferroelectric oxide perovskites as well as the topological phase transitions under external applied forces. Pb(Zr,Ti)O3 (PZT) with morphotropic phase boundary is widely explored for high piezoelectric and dielectric properties. The domain structure of PZT tetragonal/rhombohedral (T/R) bilayer is investigated. Strong interfacial coupling is shown, with large polarization rotation to a lower symmetry phase near the T/R interface. Interlayer domain growth can also be captured, with T-domains in the R layer and R-domains in the T layer. For thin PZT bilayer with 5nm of T-layer and 20 nm of R-layer, the a1/a 2 twin domain structure is formed in the top T layer, which could be fully switched to R domains under applied bias. While a unique flux-closure pattern is observed both theoretically and experimentally in the thick bilayer film with 50 nm of thickness for both T and R

Ferroelectrics under the Synchrotron Light: A Review

Directory of Open Access Journals (Sweden)

Luis E. Fuentes-Cobas

2015-12-01

Full Text Available Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS and X-ray absorption fine structure (XAFS experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

Ferroelectrics under the Synchrotron Light: A Review

Science.gov (United States)

Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

2015-01-01

Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

Two-dimensional ferroelectrics

Energy Technology Data Exchange (ETDEWEB)

Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

2000-03-31

The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

Fast switchable ferroelectric liquid crystal gratings with two electro-optical modes

International Nuclear Information System (INIS)

Ma, Ying; Srivastava, A. K.; Chigrinov, V. G.; Kwok, H.-S.; Wang, Xiaoqian

2016-01-01

In this article, we reveal a theoretical and experimental illustration of the Ferroelectric liquid crystal (FLC) grating fabricated by mean of patterned alignment based on photo-alignment. The complexity related to the mismatching of the predefined alignment domains on the top and bottom substrate has been avoided by incorporating only one side photo aligned substrate while the other substrate does not have any alignment layer. Depending on the easy axis in the said alignment domains and the azimuth plane of the impinging polarized light, the diffracting element can be tuned in two modes i.e. DIFF/OFF switchable and DIFF/TRANS switchable modes, which can be applied to different applications. The diffraction profile has been illustrated theoretically that fits well with the experimental finding and thus the proposed diffraction elements with fast response time and high diffraction efficiency could find application in many modern devices.

Ferroelectric control of magnetization in BiFeO3/CoFe heterostructures.

Science.gov (United States)

Gajek, Martin; Martin, Lane; Heron, John; Seidel, Jan; Ramesh, Ramamoorthy

2009-03-01

The cross coupling between ferroic order parameters in multiferroics opens an alternative for the control of magnetism in magnetoelectric devices by purely electrical means. We first report on the exchange coupling between BiFeO3, an antiferromagnetic ferroelectric , and CoFe. We then show that the domain structure of the ferromagnet can be changed by poling the ferroelectric layer. Finally, we will discuss the implementation of our findings into possible device schemes.

In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

Science.gov (United States)

Guo, Hanzheng

Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some well-accepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated. For the initial poling process, microstructural origins for the piezoelectricity development in the three most promising lead-free piezoceramic systems were investigated. For the non-ergodic relaxor ferroelectric compositions ( x = 6% - 9%) in the (1-x)(Bi1/2Na 1/2)TiO3-xBaTiO3 system, well-developed piezoelectricity was realized at poling fields far below the coercive field and phase transition field. Such

Above-room-temperature ferroelectricity and antiferroelectricity in benzimidazoles

Science.gov (United States)

Horiuchi, Sachio; Kagawa, Fumitaka; Hatahara, Kensuke; Kobayashi, Kensuke; Kumai, Reiji; Murakami, Youichi; Tokura, Yoshinori

2012-12-01

The imidazole unit is chemically stable and ubiquitous in biological systems; its proton donor and acceptor moieties easily bind molecules into a dipolar chain. Here we demonstrate that chains of these amphoteric molecules can often be bistable in electric polarity and electrically switchable, even in the crystalline state, through proton tautomerization. Polarization-electric field (P-E) hysteresis experiments reveal a high electric polarization ranging from 5 to 10 μC cm-2 at room temperature. Of these molecules, 2-methylbenzimidazole allows ferroelectric switching in two dimensions due to its pseudo-tetragonal crystal symmetry. The ferroelectricity is also thermally robust up to 400 K, as is that of 5,6-dichloro-2-methylbenzimidazole (up to ~373 K). In contrast, three other benzimidazoles exhibit double P-E hysteresis curves characteristic of antiferroelectricity. The diversity of imidazole substituents is likely to stimulate a systematic exploration of various structure-property relationships and domain engineering in the quest for lead- and rare-metal-free ferroelectric devices.

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Energy Technology Data Exchange (ETDEWEB)

Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.; Leeuw, Dago M. de, E-mail: deleeuw@mpip-mainz.mpg.de [Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz (Germany); Katsouras, Ilias [Holst Centre, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Groen, Wilhelm A. [Holst Centre, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Faculty of Aerospace Engineering, Delft University of Technology, Kluyverweg 1 2629 HS, Delft (Netherlands)

2016-06-06

A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O{sub 3}. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention was measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Science.gov (United States)

Zhao, Dong; Katsouras, Ilias; Asadi, Kamal; Groen, Wilhelm A.; Blom, Paul W. M.; de Leeuw, Dago M.

2016-06-01

A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O3. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention was measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.

Mapping 180° polar domains using electron backscatter diffraction and dynamical scattering simulations

Energy Technology Data Exchange (ETDEWEB)

Burch, Matthew J.; Fancher, Chris M.; Patala, Srikanth [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); De Graef, Marc [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburg, PA (United States); Dickey, Elizabeth C. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States)

2017-02-15

A novel technique, which directly and nondestructively maps polar domains using electron backscatter diffraction (EBSD) is described and demonstrated. Through dynamical diffraction simulations and quantitative comparison to experimental EBSD patterns, the absolute orientation of a non-centrosymmetric crystal can be determined. With this information, the polar domains of a material can be mapped. The technique is demonstrated by mapping the non-ferroelastic, or 180°, ferroelectric domains in periodically poled LiNbO{sub 3} single crystals. Further, the authors demonstrate the possibility of mapping polarity using this technique in other polar materials system. - Highlights: • A novel technique to directly polar domains utilizing EBSD is demonstrated. • The technique relies on dynamical diffraction simulations of EBSD patterns. • The technique is demonstrated by mapping 180° domains in LiNbO{sub 3} single crystals. • Further application of this technique to other materials classes is discussed.

Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

Science.gov (United States)

Herchig, Ryan Christopher

Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

Ferroelectric crystals for photonic applications including nanoscale fabrication and characterization techniques

CERN Document Server

Ferraro, Pietro; De Natale, Paolo

2015-01-01

This book details the latest achievements in ferroelectric domain engineering and characterization at micro- and nano-scale dimensions and periods. It combines basic research of magnetic materials with device and production orientation.

Control of analog ferroelectric states by small dc-bias in conjunction with fluctuating waveforms

International Nuclear Information System (INIS)

Ricinschi, Dan; Okuyama, Masanori

2009-01-01

In this paper we demonstrate several possibilities to create and control partially switched analog states of ferroelectric materials, from measurements on PZT capacitors. By employing various types of fluctuating waveforms and controlling the domain dynamics with dc bias of small intensities, we have shown that it is possible to generate sequences of analog ferroelectric states that may appear identical from macroscopic measurements, yet they are unique at the local level. The experimental results have been analyzed theoretically by a simple microscopic model of switching. According to the model simulations, each analog state can be associated with a domain structure that captures subtle variations of the previously applied electric field as well as structural information about the inhomogeneities at the local level. The generation and control of such partially switched analog states may be important for new applications of ferroelectric materials to multi-value memories or in the field of artificial intelligence.

Patterns, principles, and practices of domain-driven design

CERN Document Server

Millett, Scott

2015-01-01

Methods for managing complex software construction following the practices, principles and patterns of Domain-Driven Design with code examples in C# This book presents the philosophy of Domain-Driven Design (DDD) in a down-to-earth and practical manner for experienced developers building applications for complex domains. A focus is placed on the principles and practices of decomposing a complex problem space as well as the implementation patterns and best practices for shaping a maintainable solution space. You will learn how to build effective domain models through the use of tactical pat

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials.

Science.gov (United States)

Grinberg, Ilya; West, D Vincent; Torres, Maria; Gou, Gaoyang; Stein, David M; Wu, Liyan; Chen, Guannan; Gallo, Eric M; Akbashev, Andrew R; Davies, Peter K; Spanier, Jonathan E; Rappe, Andrew M

2013-11-28

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices, and for the coupling of light absorption with other functional properties. In these materials, the strong inversion symmetry breaking that is due to spontaneous electric polarization promotes the desirable separation of photo-excited carriers and allows voltages higher than the bandgap, which may enable efficiencies beyond the maximum possible in a conventional p-n junction solar cell. Ferroelectric oxides are also stable in a wide range of mechanical, chemical and thermal conditions and can be fabricated using low-cost methods such as sol-gel thin-film deposition and sputtering. Recent work has shown how a decrease in ferroelectric layer thickness and judicious engineering of domain structures and ferroelectric-electrode interfaces can greatly increase the current harvested from ferroelectric absorber materials, increasing the power conversion efficiency from about 10(-4) to about 0.5 per cent. Further improvements in photovoltaic efficiency have been inhibited by the wide bandgaps (2.7-4 electronvolts) of ferroelectric oxides, which allow the use of only 8-20 per cent of the solar spectrum. Here we describe a family of single-phase solid oxide solutions made from low-cost and non-toxic elements using conventional solid-state methods: [KNbO3]1 - x[BaNi1/2Nb1/2O3 - δ]x (KBNNO). These oxides exhibit both ferroelectricity and a wide variation of direct bandgaps in the range 1.1-3.8 electronvolts. In particular, the x = 0.1 composition is polar at room temperature, has a direct bandgap of 1.39 electronvolts and has a photocurrent density approximately 50 times larger than that of the classic ferroelectric (Pb,La)(Zr,Ti)O3 material. The ability of KBNNO to absorb three to six times more solar energy than the current ferroelectric materials suggests a route to viable ferroelectric semiconductor-based cells for solar energy conversion and

Transparent Ferroelectric Capacitors on Glass

Directory of Open Access Journals (Sweden)

Daniele Sette

2017-10-01

Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

International Nuclear Information System (INIS)

Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

2011-01-01

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

Characteristics of 1–3-type ferroelectric ceramic/auxetic polymer composites

International Nuclear Information System (INIS)

Topolov, V Yu; Bowen, C R

2008-01-01

This paper presents modelling and simulation results on 1–3 piezoactive composites comprising a range of ferroelectric ceramics, which are assumed to have variable properties and an auxetic polymer (i.e. a material with a negative Poisson ratio) that improves the hydrostatic piezoelectric response of the composite. Dependences of the effective piezoelectric coefficients and related parameters of the 1–3 composites on the degree of poling, mobility of the 90° domain walls within ceramic grains, on the volume fraction of the ceramic component and on the Poisson ratio of the polymer component have been calculated and analysed. The role of the piezoelectric anisotropy and domain-orientation processes in improving and optimising the effective parameters, piezoelectric activity and sensitivity of 1–3 ferroelectric ceramic/auxetic composites is discussed

Electronic ferroelectricity in carbon-based systems: from reality of organic conductors to promises of polymers and graphene nano-ribbons

International Nuclear Information System (INIS)

Kirova, Natasha; Brazovskii, Serguei

2014-01-01

Ferroelectricity is a rising demand in fundamental and applied solid state physics. Ferroelectrics are used in microelectronics as active gate materials, in capacitors, electro-optical-acoustic modulators, etc. There is a particular demand for plastic ferroelectrics, e.g. as a sensor for acoustic imaging in medicine and beyond, in shapeable capacitors, etc. Microscopic mechanisms of ferroelectric polarization in traditional materials are typically ionic. In this talk we discuss the electronic ferroelectrics – carbon-based materials: organic crystals, conducting polymers and graphene nano-ribbons. The motion of walls, separating domains with opposite electric polarisation, can be influenced and manipulated by terahertz and infra-red range optics

Manipulating the ferroelectric polarization state of BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Datta, S.; Rioult, M.; Stanescu, D.; Magnan, H.; Barbier, A., E-mail: antoine.barbier@cea.fr

2016-05-31

Controlling the ferroelectric polarization at macroscopic or microscopic levels is crucial in the framework of the development of ferroelectric materials used in yet challenging photo-electrochemical (PEC) cells and spintronic applications. We report here on polarization methods allowing to electrically polarize prototypical samples of BaTiO{sub 3} (001) films. Epitaxial single crystalline layers were grown up to a thickness of 25 nm by atomic oxygen assisted molecular beam epitaxy on 1 at.% Nb doped SrTiO{sub 3} (001) single crystals. The samples were both microscopically and macroscopically polarized using Piezoresponse Force Microscopy and electrochemical poling in an electrolyte respectively. In addition we demonstrate the possibility to retrieve a quasi-native mixed ferroelectric polarization state after annealing. These polarization methods may be applied to many other ferroelectric thin films. - Highlights: • Ferroelectricity of BaTiO{sub 3} layers can be micro- and macroscopically controlled. • Microscopic ferroelectric domains are defined with piezoresponse force microscopy. • Poling in a LiClO{sub 4} electrolyte is a macroscopic poling method. • Air annealing above the Curie temperature “resets” the polarization state.

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

Science.gov (United States)

Fengler, F. P. G.; Hoffmann, M.; Slesazeck, S.; Mikolajick, T.; Schroeder, U.

2018-05-01

Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films.

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

2015-01-01

HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

Visualization of ferroelectric domain structures in lithium niobate by means of confocal nonlinear microscopy; Visualisierung ferroelektrischer Domaenenstrukturen in Lithiumniobat mittels konfokaler nichtlinearer Mikroskopie

Energy Technology Data Exchange (ETDEWEB)

Berth, Gerhard

2010-07-01

In the field of integrated optics nonlinear-optical effects play a central role. A typical example for the commercial use of such phenomena is the frequency conversion. A deciding parameter is here the phase matching, which determines the quantity of the constructive interaction range of contributing optical fields. In view of a high efficiency of such processes the dispersion of a crystal must be balanced for the contributing frequencies. In nonlinear components on the base of optical waveguides the principle of the ''quasi-phase matching'' is applied, which uses the microdomain inversion. Phase jumps occuring at the domain boundaries compensate in the mean the different phase velocities. The application range of such periodical structures depends essentially on sharpness, homogeneity, depth extent, and period of the domain structure. The nonlinear confocal laser scanning microscopy makes a mapping of this transferred ferroelectric domain structure possible. Primary aim of this thesis is the characterization and mapping of the transferred ferroelectric domain structure in lithium niobate. A modularly kept confocal microscope makes here a nonlinear analysis in reflection and transmission geometry possible. In both geometries systematic studies as function of important process parameters were performed. It was shown that because of the larger nonlinear coherence length in the transmission modus the SHG ensues above all in forward direction. By depth-resolved studies at Z-cut PPLN structured between the surface region and the volume crystal a flippling of the SHG contrast could be observed. In samples with circular pole structure additionally in the crystal a transition to a hexagonal structure took place. In the Ti:PPLN strip waveguide a strong and specific increasement of the nonlinear signal of the domain walls was discovered. Here also the usual SHG surface contrast between dhe domains and the boundaries is inverted. Also differently processed

Structural domain walls in polar hexagonal manganites

Science.gov (United States)

Kumagai, Yu

2014-03-01

The domain structure in the multiferroic hexagonal manganites is currently intensely investigated, motivated by the observation of intriguing sixfold topological defects at their meeting points [Choi, T. et al,. Nature Mater. 9, 253 (2010).] and nanoscale electrical conductivity at the domain walls [Wu, W. et al., Phys. Rev. Lett. 108, 077203 (2012).; Meier, D. et al., Nature Mater. 11, 284 (2012).], as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains [Geng, Y. et al., Nano Lett. 12, 6055 (2012).]. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously not fully understood. In the present study, we have used first-principles density functional theory to calculate the structure and properties of the low-energy structural domain walls in the hexagonal manganites [Kumagai, Y. and Spaldin, N. A., Nature Commun. 4, 1540 (2013).]. We find that the lowest energy domain walls are atomically sharp, with {210}orientation, explaining the orientation of recently observed stripe domains and suggesting their topological protection [Chae, S. C. et al., Phys. Rev. Lett. 108, 167603 (2012).]. We also explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, and suggest an atomistic structure for the cores of the sixfold topological defects. This work was supported by ETH Zurich, the European Research Council FP7 Advanced Grants program me (grant number 291151), the JSPS Postdoctoral Fellowships for Research Abroad, and the MEXT Elements Strategy Initiative to Form Core Research Center TIES.

Study of the mapping mechanism of ferroelectric domains with the scanning force microscope; Untersuchung der Abbildungsmechanismen ferroelektrischer Domaenen mit dem Rasterkraftmikroskop

Energy Technology Data Exchange (ETDEWEB)

Jungk, T.

2006-12-15

The piezo-force microscopy (PFM) allows the mapping of ferroelectric domains until the nanometer range. In spite of its simple function principle it was hitherto not completely understood. In ordser to develop the PFM further to a quantitative analysis method its methodical aspects were analyzed. It was shown that the fundamental mapping mechanism is based on the inverse piezo-effect. Different artefacts to be found in the literature could therefore be reduced to a measurement background. Furthermore the influence of the electrode geometry was analyzed. The width of doamin walls was systematically measured and simulated with a mode, whereby a maximal resolution of 17 nm was reached. By the development of a correction procedure for the exact detection of the forces acting on the spring-beam the lateral signals measured on domain walls could by newly interpreted. So the ''Lateral Electrostatic Force Microscopy'' was developed.

Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

Science.gov (United States)

He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

2010-09-01

We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

Ferroelectric switching of elastin

Science.gov (United States)

Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

2014-01-01

Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

Domains within domains and walls within walls: Evidence for polar domains in cryogenic SrTiO.sub.3./sub..

Czech Academy of Sciences Publication Activity Database

Salje, E.K.H.; Aktas, O.; Carpenter, M.A.; Laguta, Valentyn; Scott, J.F.

2013-01-01

Roč. 111, č. 24 (2013), "247603-1"-"247603-5" ISSN 0031-9007 Institutional support: RVO:68378271 Keywords : ferroelectric domains * SrTiO 3 * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.728, year: 2013

Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

Energy Technology Data Exchange (ETDEWEB)

Vasudevan, Rama K [ORNL; Bogle, K A [University of New South Wales, Sydney, Australia; Kumar, Amit [ORNL; Jesse, Stephen [ORNL; Magaraggia, R [University of Glasgow; Stamps, R [University of Glasgow; Ogale, S [National Chemical Laboratory, India; Potdar, H S [National Chemical Laboratory, India

2011-01-01

Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of 1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

Science.gov (United States)

Vasudevan, R. K.; Bogle, K. A.; Kumar, A.; Jesse, S.; Magaraggia, R.; Stamps, R.; Ogale, S. B.; Potdar, H. S.; Nagarajan, V.

2011-12-01

Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1-xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of ˜1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

Science.gov (United States)

Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

2018-01-01

Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition

Molecular ferroelectrics: where electronics meet biology.

Science.gov (United States)

Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

2013-12-28

In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

Science.gov (United States)

Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

2009-01-01

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2, respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

International Nuclear Information System (INIS)

Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

2009-01-01

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2 , respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

Giant Magnetoelectric Energy Conversion Utilizing Inter-Ferroelectric Phase Transformations in Ferroics

Science.gov (United States)

Finkel, Peter; Staruch, Margo

Phase transition-based electromechanical transduction permits achieving a non-resonant broadband mechanical energy conversion see (Finkel et al Actuators, 5 [1] 2. (2015)) , the idea is based on generation high energy density per cycle , at least 100x of magnitude larger than linear piezoelectric type generators in stress biased [011]cut relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystal can generate reversible strain >0.35% at remarkably low fields (0.1 MV/m) for tens of millions of cycles. Recently we demonstrated that large strain and polarization rotation can be generated for over 40 x 106cycles with little fatigue by realization of reversible ferroelectric-ferroelectric phase transition in [011] cut PIN-PMN-PT relaxor ferroelectric single crystal while sweeping through the transition with a low applied electric field <0.18 MV/m under mechanical stress. This methodology was extended in the present work to propose magnetoelectric (ME) composite hybrid system comprised of highly magnetostrictive alloymFe81.4Ga18.6 (Galfenol), and lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT) domain engineered relaxor ferroelectric single crystal. A small time-varying magnetic field applied to this system causes the magnetostrictive element to expand, and the resulting stress forces the phase change in the relaxor ferroelectric single crystal. ME coupling coefficient was fond to achieve 80 V/cm Oe near the FR-FO phase transition that is at least 100X of magnitude higher than any currently reported values.

Second-harmonic imaging of ferroelectric domain walls

DEFF Research Database (Denmark)

Bozhevolnyi, Sergey I.; Hvam, Jørn Märcher; Pedersen, Kjeld

1998-01-01

configurations are presented. The SH generation enhancement is found especially pronounced for the polarization of the SH radiation being perpendicular to the domain walls. The origin and selection rules for the contrast in SH images of domain walls are discussed. The results obtained suggest that the domain...

Ferroelectrics principles, structure and applications

CERN Document Server

Merchant, Serena

2014-01-01

Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

Ferroelectricity with Ferromagnetic Moment in Orthoferrites

Science.gov (United States)

Tokunaga, Yusuke

2010-03-01

Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-01-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-11-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Organic ferroelectric memory devices with inkjet-printed polymer electrodes on flexible substrates

KAUST Repository

Bhansali, Unnat Sampatraj

2013-05-01

Drop-on-demand piezoelectric inkjet-printing technique has been used to fabricate a functional cross-bar array of all-organic ferroelectric memory devices. The polymer-ferroelectric-polymer device consists of a ferroelectric copolymer P(VDF-TrFE) film sandwiched between inkjet-patterned, continuous, orthogonal lines of PEDOT:PSS polymer as the bottom and top electrodes. These devices exhibit well-saturated hysteresis curves with a maximum remnant polarization (Pr) = 6.7 μC/cm2, coercive field (E c) = 55 MV/m and a peak capacitance density of 45 nF/cm2. Our polarization fatigue measurements show that these devices retain ∼100% and 45% of their initial Pr values after 103 and 10 5 stress cycles, respectively. The overall performance and polarization retention characteristics of these ferroelectric capacitors with inkjet-printed polymer electrodes are comparable to metal and spin-cast polymer electrodes suggesting their potential use in large-area flexible electronics. © 2013 Elsevier Ltd. All rights reserved.

Pyroelectric field assisted ion migration induced by ultraviolet laser irradiation and its impact on ferroelectric domain inversion in lithium niobate crystals

International Nuclear Information System (INIS)

Ying, C. Y. J.; Mailis, S.; Daniell, G. J.; Steigerwald, H.; Soergel, E.

2013-01-01

The impact of UV laser irradiation on the distribution of lithium ions in ferroelectric lithium niobate single crystals has been numerically modelled. Strongly absorbed UV radiation at wavelengths of 244–305 nm produces steep temperature gradients which cause lithium ions to migrate and result in a local variation of the lithium concentration. In addition to the diffusion, here the pyroelectric effect is also taken into account which predicts a complex distribution of lithium concentration along the c-axis of the crystal: two separated lithium deficient regions on the surface and in depth. The modelling on the local lithium concentration and the subsequent variation of the coercive field are used to explain experimental results on the domain inversion of such UV treated lithium niobate crystals

Mn55 NMR investigation of the correlation between antiferromagnetism and ferroelectricity in TbMn2O5

Science.gov (United States)

Baek, S.-H.; Reyes, A. P.; Hoch, M. J. R.; Moulton, W. G.; Kuhns, P. L.; Harter, A. G.; Hur, N.; Cheong, S.-W.

2006-10-01

The correlation between antiferromagnetism and ferroelectricity in magnetoelectric multiferroic TbMn2O5 has been investigated by zero-field Mn55 NMR. Antiferromagnetic transition near 40K is found to be first order. When an external field up to 7T is applied along the easy a axis, a dramatic change in the signal intensity is observed which is hysteretic in nature. Such effects are absent for H along the b and c axes. The observed field-induced signal enhancement is attributed to antiferromagnetic domain walls which are strongly coupled to ferroelectric domain walls. Experimental data suggest that this may be related to the field-induced ferromagnetic ordering of the Tb ion.

Nonequilibrium ferroelectric-ferroelastic 10 nm nanodomains: wrinkles, period-doubling, and power-law relaxation.

Science.gov (United States)

Scott, James F; Evans, Donald M; Katiyar, Ram S; McQuaid, Raymond G P; Gregg, J Marty

2017-08-02

Since the 1935 work of Landau-Lifshitz and of Kittel in 1946 all ferromagnetic, ferroelectric, and ferroelastic domains have been thought to be straight-sided with domain widths proportional to the square root of the sample thickness. We show in the present work that this is not true. We also discover period doubling domains predicted by Metaxas et al (2008 Phys. Rev. Lett. 99 217208) and modeled by Wang and Zhao (2015 Sci. Rep. 5 8887). We examine non-equilibrium ferroic domain structures in perovskite oxides with respect to folding, wrinkling, and relaxation and suggest that structures are kinetically limited and in the viscous flow regime predicted by Metaxas et al in 2008 but never observed experimentally. Comparisons are made with liquid crystals and hydrodynamic instabilities, including chevrons, and fractional power-law relaxation. As Shin et al (2016 Soft Matter 12 3502) recently emphasized: 'An understanding of how these folds initiate, propagate, and interact with each other is still lacking'. Inside each ferroelastic domain are ferroelectric 90° nano-domains with 10 nm widths and periodicity in agreement with the 10 nm theoretical minima predicted by Feigl et al (2014 Nat. Commun. 5 4677). Evidence is presented for domain-width period doubling, which is common in polymer films but unknown in ferroic domains. A discussion of the folding-to-period doubling phase transition model of Wang and Zhao is included.

Ferroelectricity at the nanoscale basics and applications

CERN Document Server

Fridkin, Vladimir

2014-01-01

This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films,  presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

Aperiodic topological order in the domain configurations of functional materials

Science.gov (United States)

Huang, Fei-Ting; Cheong, Sang-Wook

2017-03-01

In numerous functional materials, such as steels, ferroelectrics and magnets, new functionalities can be achieved through the engineering of the domain structures, which are associated with the ordering of certain parameters within the material. The recent progress in technologies that enable imaging at atomic-scale spatial resolution has transformed our understanding of domain topology, revealing that, along with simple stripe-like or irregularly shaped domains, intriguing vortex-type topological domain configurations also exist. In this Review, we present a new classification scheme of 'Zm Zn domains with Zl vortices' for 2D macroscopic domain structures with m directional variants and n translational antiphases. This classification, together with the concepts of topological protection and topological charge conservation, can be applied to a wide range of materials, such as multiferroics, improper ferroelectrics, layered transition metal dichalcogenides and magnetic superconductors, as we discuss using selected examples. The resulting topological considerations provide a new basis for the understanding of the formation, kinetics, manipulation and property optimization of domains and domain boundaries in functional materials.

Nano and micro reoriented domains and their relation with the crystal structure in the new ferroelectric boracite Zn3B7O13Br

International Nuclear Information System (INIS)

Campa-Molina, J; Ulloa-Godinez, S; Barrera, A; Bucio, L; Mata, J

2006-01-01

A new zinc brome boracite Zn 3 B 7 O 13 Br has been grown by a chemical transport reaction in closed quartz ampoules at 920 K. The crystal structure was characterized by Rietveld refinement. Ferroelectric nano and micro reorientable domains were found in this material using polarizing optical microscopy (PLM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Chemical analysis was performed with x-ray energy dispersive spectroscopy (EDX). In the crystal, a new structure transition at 586 K from orthorhombic (Pca 2 1 ) to cubic cell (F4-bar3c) has been found. This transition was corroborated by differential scanning calorimetry (DSC)

Nano and micro reoriented domains and their relation with the crystal structure in the new ferroelectric boracite Zn3B7O13Br

Science.gov (United States)

Campa-Molina, J.; Ulloa-Godínez, S.; Barrera, A.; Bucio, L.; Mata, J.

2006-05-01

A new zinc brome boracite Zn3B7O13Br has been grown by a chemical transport reaction in closed quartz ampoules at 920 K. The crystal structure was characterized by Rietveld refinement. Ferroelectric nano and micro reorientable domains were found in this material using polarizing optical microscopy (PLM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Chemical analysis was performed with x-ray energy dispersive spectroscopy (EDX). In the crystal, a new structure transition at 586 K from orthorhombic (Pca 21) to cubic cell (F\\overline 4 3c ) has been found. This transition was corroborated by differential scanning calorimetry (DSC).

Ferroelectric devices

CERN Document Server

Uchino, Kenji

2009-01-01

Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development.Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulat

Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture

International Nuclear Information System (INIS)

Kim, Min-Hoi; Lee, Gyu Jeong; Keum, Chang-Min; Lee, Sin-Doo

2014-01-01

We propose a concept of rewritable ferroelectric random access memory (RAM) with two lateral organic transistors-in-one cell architecture. Lateral integration of a paraelectric organic field-effect transistor (OFET), being a selection transistor, and a ferroelectric OFET as a memory transistor is realized using a paraelectric depolarizing layer (PDL) which is patterned on a ferroelectric insulator by transfer-printing. For the selection transistor, the key roles of the PDL are to reduce the dipolar strength and the surface roughness of the gate insulator, leading to the low memory on–off ratio and the high switching on–off current ratio. A new driving scheme preventing the crosstalk between adjacent memory cells is also demonstrated for the rewritable operation of the ferroelectric RAM. (paper)

Characteristics and controllability of vortices in ferromagnetics, ferroelectrics, and multiferroics.

Science.gov (United States)

Zheng, Yue; Chen, W J

2017-08-01

Topological defects in condensed matter are attracting e significant attention due to their important role in phase transition and their fascinating characteristics. Among the various types of matter, ferroics which possess a switchable physical characteristic and form domain structure are ideal systems to form topological defects. In particular, a special class of topological defects-vortices-have been found to commonly exist in ferroics. They often manifest themselves as singular regions where domains merge in large systems, or stabilize as novel order states instead of forming domain structures in small enough systems. Understanding the characteristics and controllability of vortices in ferroics can provide us with deeper insight into the phase transition of condensed matter and also exciting opportunities in designing novel functional devices such as nano-memories, sensors, and transducers based on topological defects. In this review, we summarize the recent experimental and theoretical progress in ferroic vortices, with emphasis on those spin/dipole vortices formed in nanoscale ferromagnetics and ferroelectrics, and those structural domain vortices formed in multiferroic hexagonal manganites. We begin with an overview of this field. The fundamental concepts of ferroic vortices, followed by the theoretical simulation and experimental methods to explore ferroic vortices, are then introduced. The various characteristics of vortices (e.g. formation mechanisms, static/dynamic features, and electronic properties) and their controllability (e.g. by size, geometry, external thermal, electrical, magnetic, or mechanical fields) in ferromagnetics, ferroelectrics, and multiferroics are discussed in detail in individual sections. Finally, we conclude this review with an outlook on this rapidly developing field.

Ferroelectric ultrathin perovskite films

Science.gov (United States)

Rappe, Andrew M; Kolpak, Alexie Michelle

2013-12-10

Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

International Nuclear Information System (INIS)

Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

2015-01-01

Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

Energy Technology Data Exchange (ETDEWEB)

Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2015-09-30

Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

A phase field approach for the fully coupled thermo-electro-mechanical dynamics of nanoscale ferroelectric actuators

Science.gov (United States)

Wang, Dan; Du, Haoyuan; Wang, Linxiang; Melnik, Roderick

2018-05-01

The fully coupled thermo-electro-mechanical properties of nanoscale ferroelectric actuators are investigated by a phase field model. Firstly, the thermal effect is incorporated into the commonly-used phase field model for ferroelectric materials in a thermodynamic consistent way and the governing equation for the temperature field is derived. Afterwards, the modified model is numerically implemented to study a selected prototype of the ferroelectric actuators, where strain associated with electric field-induced non-180° domain switching is employed. The temperature variation and energy flow in the actuation process are presented, which enhances our understanding of the working mechanism of the actuators. Furthermore, the influences of the input voltage frequency and the thermal boundary condition on the temperature variation are demonstrated and carefully discussed in the context of thermal management for real applications.

Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric field.

Science.gov (United States)

Karpov, D; Liu, Z; Rolo, T Dos Santos; Harder, R; Balachandran, P V; Xue, D; Lookman, T; Fohtung, E

2017-08-17

Topological defects of spontaneous polarization are extensively studied as templates for unique physical phenomena and in the design of reconfigurable electronic devices. Experimental investigations of the complex topologies of polarization have been limited to surface phenomena, which has restricted the probing of the dynamic volumetric domain morphology in operando. Here, we utilize Bragg coherent diffractive imaging of a single BaTiO 3 nanoparticle in a composite polymer/ferroelectric capacitor to study the behavior of a three-dimensional vortex formed due to competing interactions involving ferroelectric domains. Our investigation of the structural phase transitions under the influence of an external electric field shows a mobile vortex core exhibiting a reversible hysteretic transformation path. We also study the toroidal moment of the vortex under the action of the field. Our results open avenues for the study of the structure and evolution of polar vortices and other topological structures in operando in functional materials under cross field configurations.Imaging of topological states of matter such as vortex configurations has generally been limited to 2D surface effects. Here Karpov et al. study the volumetric structure and dynamics of a vortex core mediated by electric-field induced structural phase transition in a ferroelectric BaTiO 3 nanoparticle.

Operational method of a ferroelectric (Fe)-NAND flash memory array

International Nuclear Information System (INIS)

Wang, Shouyu; Takahashi, Mitue; Li, Qiu-Hong; Sakai, Shigeki; Takeuchi, Ken

2009-01-01

Operations of arrayed ferroelectric (Fe)-NAND flash memory cells: erase, program and read were demonstrated for the first time using a small cell array of four word lines by two NAND strings. The memory cells and select-gate transistors were all n-channel Pt/SrBi 2 Ta 2 O 9 /Hf-Al-O/Si ferroelectric-gate field effect transistors. The erase was performed by applying 10 µs wide 7 V pulses to n- and p-wells. The program was performed by applying 10 µs wide 7 V pulses to selected word lines. Accumulated read currents of 51 programmed patterns in the Fe-NAND flash memory cell array successfully showed distribution of the two distinguishable '0' and '1' states. The margin between the two states became wider by applying a verification technique in programming a cell out of the eight. Retention times of bit-line currents were obtained over 33 h for both the '0' and '1' states in a program pattern

Synchrotron X-ray topographic studies of para-ferroelectric transition in ammonium sulphate crystal

International Nuclear Information System (INIS)

Bhat, H.L.; Roberts, K.J.

1993-01-01

Ammonium sulphate undergoes a para-ferroelectric transition at 223 K. The transition is presumably first order in nature. White radiation topographic studies of this transition are presented here. The existence of pre-transition effects due to lattice deformation leading to severe strain is noticed. This sometimes resulted in dislocation generation. The well defined phase boundary observed in this crystal confirms the first order nature of this transition. The zigzag nature of the phase boundary with preferably oriented segments has been attributed to the specific properties of the strain tensors of the transition. Ferroelectric domains have also been detected by faint dynamical x-ray contrast of their images. (author). 7 refs., 1 fig

Molecular ferroelectric contributions to anomalous hysteresis in hybrid perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Frost, Jarvist M.; Butler, Keith T.; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

2014-08-01

We report a model describing the molecular orientation disorder in CH{sub 3}NH{sub 3}PbI{sub 3}, solving a classical Hamiltonian parametrised with electronic structure calculations, with the nature of the motions informed by ab initio molecular dynamics. We investigate the temperature and static electric field dependence of the equilibrium ferroelectric (molecular) domain structure and resulting polarisability. A rich domain structure of twinned molecular dipoles is observed, strongly varying as a function of temperature and applied electric field. We propose that the internal electrical fields associated with microscopic polarisation domains contribute to hysteretic anomalies in the current-voltage response of hybrid organic-inorganic perovskite solar cells due to variations in electron-hole recombination in the bulk.

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes.

Science.gov (United States)

Zhou, Yu; Wu, Di; Zhu, Yihan; Cho, Yujin; He, Qing; Yang, Xiao; Herrera, Kevin; Chu, Zhaodong; Han, Yu; Downer, Michael C; Peng, Hailin; Lai, Keji

2017-09-13

Piezoelectric and ferroelectric properties in the two-dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In 2 Se 3 nanoflakes. The noncentrosymmetric R3m symmetry of the α-In 2 Se 3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In 2 Se 3 nanoflakes with thicknesses down to ∼10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In 2 Se 3 , one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

Observation of ferroelastic domains in layered magnetic compounds using birefringence imaging

Science.gov (United States)

Miura, Yoko; Okumura, Kazuya; Manaka, Hirotaka

2018-03-01

The two-dimensional Heisenberg antiferromagnet (C2H5NH3)2CuCl4 is a candidate compound for the coexistence of ferroelectricity and ferroelasticity; however, the microscopic observations of multiferroic domains may still be unclear. In-plane birefringence imaging measurements were performed to observe the manner in which the ferroelectric and the ferroelastic domains change during phase transitions between 15 K and 300 K. It was found that 90° ferroelastic domains appeared in the ab-plane at 300 K. As the temperature decreased toward 15 K, each domain inverted at a certain temperature (T a) without structural or magnetic phase transitions. The value of T a was found to be significantly influenced by external stresses; therefore, birefringence imaging techniques are useful for investigating variations in ferroelastic domains with temperature. Furthermore, a structural phase transition from orthorhombic to monoclinic or triclinic occurred at 230 ~ 240 K; however, no spontaneous polarization appeared in the ab-plane over the entire investigated range.

Ferroelectric materials and their applications

CERN Document Server

Xu, Y

2013-01-01

This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7O3 for multi-bit storage application

Directory of Open Access Journals (Sweden)

Lu Qian

2011-01-01

Full Text Available Abstract In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7O3 (PZT] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

Structural sensitivity of x-ray Bragg projection ptychography to domain patterns in epitaxial thin films

International Nuclear Information System (INIS)

Hruszkewycz, S. O.; Zhang, Q.; Holt, M. V.; Highland, M. J.

2016-01-01

Bragg projection ptychography (BPP) is a coherent diffraction imaging technique capable of mapping the spatial distribution of the Bragg structure factor in nanostructured thin films. Here, we show that, because these images are projections, the structural sensitivity of the resulting images depends on the film thickness and the aspect ratio and orientation of the features of interest and that image interpretation depends on these factors. Lastly, we model changes in contrast in the BPP reconstructions of simulated PbTiO_3 ferroelectric thin films with meandering 180° stripe domains as a function of film thickness, discuss their origin, and comment on the implication of these factors on the design of BPP experiments of general nanostructured films.

Electrical performance of polymer ferroelectric capacitors fabricated on plastic substrate using transparent electrodes

KAUST Repository

Bhansali, Unnat Sampatraj

2012-09-01

Polymer-based flexible ferroelectric capacitors have been fabricated using a transparent conducting oxide (ITO) and a transparent conducting polymer (PEDOT:PSS). It is found that the polarization fatigue performance with transparent oxide electrodes exhibits a significant improvement over the polymer electrodes (20% vs 70% drop in polarization after 10 6 cycles). This result can be explained based on a charge injection model that is controlled by interfacial band-offsets, and subsequent pinning of ferroelectric domain walls by the injected carriers. Furthermore, the coercive field (E c) of devices with our polymer electrodes is nearly 40% lower than reported values with similar polymer electrodes. Surprisingly, this difference was found to be related to the dry etching process used to define the top electrodes, which is reported for the first time by this group. The temperature dependence of relative permittivity of both devices shows a typical first order ferroelectric-to-paraelectric phase transition, but with a reduced Curie temperature compared to reference devices fabricated on Pt. © 2012 Elsevier B.V. All rights reserved.

Electrical performance of polymer ferroelectric capacitors fabricated on plastic substrate using transparent electrodes

KAUST Repository

Bhansali, Unnat Sampatraj; Khan, Yasser; Alshareef, Husam N.

2012-01-01

Polymer-based flexible ferroelectric capacitors have been fabricated using a transparent conducting oxide (ITO) and a transparent conducting polymer (PEDOT:PSS). It is found that the polarization fatigue performance with transparent oxide electrodes exhibits a significant improvement over the polymer electrodes (20% vs 70% drop in polarization after 10 6 cycles). This result can be explained based on a charge injection model that is controlled by interfacial band-offsets, and subsequent pinning of ferroelectric domain walls by the injected carriers. Furthermore, the coercive field (E c) of devices with our polymer electrodes is nearly 40% lower than reported values with similar polymer electrodes. Surprisingly, this difference was found to be related to the dry etching process used to define the top electrodes, which is reported for the first time by this group. The temperature dependence of relative permittivity of both devices shows a typical first order ferroelectric-to-paraelectric phase transition, but with a reduced Curie temperature compared to reference devices fabricated on Pt. © 2012 Elsevier B.V. All rights reserved.

Emergent rotational symmetries in disordered magnetic domain patterns.

Science.gov (United States)

Su, Run; Seu, Keoki A; Parks, Daniel; Kan, Jimmy J; Fullerton, Eric E; Roy, Sujoy; Kevan, Stephen D

2011-12-16

Uniaxial systems often form labyrinthine domains that exhibit short-range order but are macroscopically isotropic and would not be expected to exhibit precise symmetries. However, their underlying frustration results in a multitude of metastable configurations of comparable energy, and driving such a system externally might lead to pattern formation. We find that soft x-ray speckle diffraction patterns of the labyrinthine domains in CoPd/IrMn heterostructures reveal a diverse array of hidden rotational symmetries about the magnetization axis, thereby suggesting an unusual form of emergent order in an otherwise disordered system. These symmetries depend on applied magnetic field, magnetization history, and scattering wave vector. Maps of rotational symmetry exhibit intriguing structures that can be controlled by manipulating the applied magnetic field in concert with the exchange bias condition. © 2011 American Physical Society

Electric-field-induced paraelectric to ferroelectric phase transformation in prototypical polycrystalline BaTiO3

International Nuclear Information System (INIS)

Wang, Zhiyang; Hinterstein, Manuel; Daniels, John E.; Webber, Kyle G.; Hudspeth, Jessica M.

2014-01-01

An electric-field-induced paraelectric cubic to ferroelectric tetragonal phase transformation has been directly observed in prototypical polycrystalline BaTiO 3 at temperatures above the Curie point (T C ) using in situ high-energy synchrotron X-ray diffraction. The transformation persisted to a maximum temperature of 4 °C above T C . The nature of the observed field-induced transformation and the resulting development of domain texture within the induced phase were dependent on the proximity to the transition temperature, corresponding well to previous macroscopic measurements. The transition electric field increased with increasing temperature above T C , while the magnitude of the resultant tetragonal domain texture at the maximum electric field (4 kV mm −1 ) decreased at higher temperatures. These results provide insights into the phase transformation behavior of a prototypical ferroelectric and have important implications for the development of future large-strain phase-change actuator materials.

Magnetic field effect on Gd2(MoO4)3 domain structure formation in the phase transformation range

International Nuclear Information System (INIS)

Flerova, S.A.; Tsinman, I.L.

1987-01-01

The behaviour of ferroelastic-ferroelectric domain structure of gadolinium molybdate crystal (GMO)during its formation in the magnetic field in the vicinity of phase transformation is studied.It is shown that the formation of domain structure in the presence of a temperature gradient occurs in the field of mechanical stresses whose mainly stretching effect is concentrated near phase boundaries.The magnetic field intensifies summary mechanical stresses where a domain structure in a ferroelectric phase is formed due to interaction with the elements of inhomogeneous and differently oriented currents near phase boundaries

Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors

International Nuclear Information System (INIS)

Yang, Feng; Hu, Guangda; Wu, Weibing; Yang, Changhong; Wu, Haitao; Tang, Minghua

2013-01-01

The influence of strains on the channel current–gate voltage behaviors and memory windows of ferroelectric memory field-effect transistors (FeMFETs) were studied using an improved model based on the Landau–Devonshire theory. ‘Channel potential–gate voltage’ ferroelectric polarization and silicon surface potential diagrams were constructed for strained single-domain BaTiO 3 FeMFETs. The compressive strains can increase (or decrease) the amplitude of transistor currents and enlarge memory windows. However, tensile strains only decrease the maximum value of transistor currents and compress memory windows. Mismatch strains were found to have a significant influence on the electrical behaviors of the devices, therefore, they must be considered in FeMFET device designing. (fast track communication)

Ferroelectric Electron Emission Principles and Technology

CERN Document Server

Riege, H

1997-01-01

The spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-ferroelectric state or vice versa. If spontaneous polarization changes are induced with fast heat, mechanical pressure, laser or electric field pulses on a submicrosecond time scale, strong uncompensated surface charge densities and related polarization fields are generated, which may lead to the intense self-emission of electrons from the negatively charged free surface areas of the ferroelectric sample. Hence, electron guns can be built with extraction-field-free ferroelectric cathodes, which may be easily separated from the high-field regions of post-accelerating gap structures. The intensity, the energy, the temporal and spatial distribution, and the repetitition rate of the emitted electron beams can be controlled within wide limits via the excitation pulses and external focusing and accelerating electromagnetic fields. The technological advantages an...

Ferroelectricity in undoped hafnium oxide

International Nuclear Information System (INIS)

Polakowski, Patrick; Müller, Johannes

2015-01-01

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes

KAUST Repository

Zhou, Yu

2017-08-25

Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes

KAUST Repository

Zhou, Yu; Wu, Di; Zhu, Yihan; Cho, Yujin; He, Qing; Yang, Xiao; Herrera, Kevin; Chu, Zhaodong; Han, Yu; Downer, Mike; Peng, Hailin; Lai, Keji

2017-01-01

Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

The effect of phase assemblages, grain boundaries and domain structure on the local switching behavior of rare-earth modified bismuth ferrite ceramics

International Nuclear Information System (INIS)

Alikin, Denis O.; Turygin, Anton P.; Walker, Julian; Bencan, Andreja; Malic, Barbara; Rojac, Tadej; Shur, Vladimir Ya.; Kholkin, Andrei L.

2017-01-01

Piezoelectric properties and ferroelectric/ferroelastic domain switching behavior of polycrystalline ceramics are strongly influenced by local scale (i.e. <100 nm) phenomena, such as, the phase assemblages, domain structure, and defects. The method of ceramic synthesis strongly effects the local properties and thus plays a critical role in determining the macroscopic ferroelectric and piezoelectric performance. The link between synthesis and local scale properties of ferroelectrics is, however, rarely reported, especially for the emerging lead-free materials systems. In this work, we focus on samarium modified bismuth ferrite ceramics (Bi_0_._8_8Sm_0_._1_2FeO_3, BSFO) prepared by two methods: standard solid state reaction (SSR) and mechanochemi≿ally assisted synthesis (MAS). Each ceramic possesses different properties at the local scale and we used the piezoresponse force microscopy (PFM) complemented by transmission electron microscopy (TEM) to evaluate phase distribution, domain structure and polarization switching to show that an increase in the anti-polar phase assemblages within the polar matrix leads to notable changes in the local polarization switching. SSR ceramics exhibit larger internal bias fields relative to the MAS ceramics, and the grain boundaries produce a stronger effect on the local switching response. MAS ceramics were able to nucleate domains at lower electric-fields and grow them at faster rates, reaching larger final domain sizes than the SSR ceramics. Local evidence of the electric-field induced phase transition from the anti-ferroelectric Pbam to ferroelectric R3c phase was observed together with likely evidence of the existence of head-to-head/tail-to-tail charged domain walls and domain vortex core structures. By comparing the domain structure and local switching behavior of ceramics prepared by two different methods this work brings new insights the synthesis-structure-property relationship in lead-free piezoceramics.

Ferroelectric crystals for photonic applications including nanoscale fabrication and characterization techniques

CERN Document Server

Grilli, Simonetta

2008-01-01

This book deals with the latest achievements in the field of ferroelectric domain engineering and characterization at micron- and nano-scale dimensions and periods. The book collects the results obtained in the last years by world scientific leaders in the field, thus providing a valid and unique overview of the state of the art and also a view to future applications of those engineered materials in the field of photonics.

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

International Nuclear Information System (INIS)

Song, Jingfeng; Lu, Haidong; Gruverman, Alexei; Ducharme, Stephen; Li, Shumin; Tan, Li

2016-01-01

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics. (paper)

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

Science.gov (United States)

Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

2016-01-08

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

Texture and anisotropy in ferroelectric lead metaniobate

Science.gov (United States)

Iverson, Benjamin John

Ferroelectric lead metaniobate, PbNb2O6, is a piezoelectric ceramic typically used because of its elevated Curie temperature and anisotropic properties. However, the piezoelectric constant, d33, is relatively low in randomly oriented ceramics when compared to other ferroelectrics. Crystallographic texturing is often employed to increase the piezoelectric constant because the spontaneous polarization axes of grains are better aligned. In this research, crystallographic textures induced through tape casting are distinguished from textures induced through electrical poling. Texture is described using multiple quantitative approaches utilizing X-ray and neutron time-of-flight diffraction. Tape casting lead metaniobate with an inclusion of acicular template particles induces an orthotropic texture distribution. Templated grain growth from seed particles oriented during casting results in anisotropic grain structures. The degree of preferred orientation is directly linked to the shear behavior of the tape cast slurry. Increases in template concentration, slurry viscosity, and casting velocity lead to larger textures by inducing more particle orientation in the tape casting plane. The maximum 010 texture distributions were two and a half multiples of a random distribution. Ferroelectric texture was induced by electrical poling. Electric poling increases the volume of material oriented with the spontaneous polarization direction in the material. Samples with an initial paraelectric texture exhibit a greater change in the domain volume fraction during electrical poling than randomly oriented ceramics. In tape cast samples, the resulting piezoelectric response is proportional to the 010 texture present prior to poling. This results in property anisotropy dependent on initial texture. Piezoelectric properties measured on the most textured ceramics were similar to those obtained with a commercial standard.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

International Nuclear Information System (INIS)

Yurchuk, Ekaterina

2015-01-01

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering.

Science.gov (United States)

Pan, Hao; Ma, Jing; Ma, Ji; Zhang, Qinghua; Liu, Xiaozhi; Guan, Bo; Gu, Lin; Zhang, Xin; Zhang, Yu-Jun; Li, Liangliang; Shen, Yang; Lin, Yuan-Hua; Nan, Ce-Wen

2018-05-08

Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm -3 , together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage.

Structure-Function Relationships of Ferroelectric Polymers.

Science.gov (United States)

Pavlopoulou, Eleni; Maiz, Jon; Spampinato, Nicoletta; Maglione, Mario; Hadziioannou, Georges

Poly(vinylidene fluoride), PVDF, and its copolymers with trifluoroethylene, P(VDF-co-TrFE) have been long appreciated for their excellent ferroelectric properties. Although they have been mainly studied in the 80s and 90s, understanding their performance is still lacking. Yet the increasing use of P(VDF-co-TrFE) thin films in organic electronic devices during the last ten years revives the need for apprehending the function of these materials. In this work we investigate the structure of P(VDF-co-TrFE) films and correlate it to their ferroelectric properties. Our results show that ferroelectric performance is solely driven by the fraction of polymer that has been crystallized in the ferroelectric phases of PVDF. The relations between remnant polarization, coercive field and dipole switching rate of P(VDF-co-TrFE) with the ferroelectric crystallinity are demonstrated. The French Research Agency (ANR), the Aquitaine Region, Arkema and STMicroelectronics are kindly acknowledged for financial support.

Nucleation of domains under the influence of temperature in ...

Indian Academy of Sciences (India)

Abstract. It is found that the nucleation of domains can take place in Ba5Ti2O7Cl4 under the influence of temperature unlike in many other ferroelectrics. The nucleated domain can also be removed from the structure under the randomizing effect of tem- perature. These observations have been explained on the basis of a ...

Nanoscale organic ferroelectric resistive switches

NARCIS (Netherlands)

Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

2014-01-01

Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

Domain configuration changes under electric field-induced antiferroelectric-ferroelectric phase transitions in NaNbO3-based ceramics

International Nuclear Information System (INIS)

Guo, Hanzheng; Randall, Clive A.; Shimizu, Hiroyuki; Mizuno, Youichi

2015-01-01

We recently developed a feasible crystal chemistry strategy to stabilize the antiferroelectricity in NaNbO 3 through a chemical substitution to decrease the tolerance factor and increase the average electronegativity of the system [Shimizu et al., Dalton Trans. 44, 10763 (2015) and Guo et al., J. Appl. Phys. 117, 214103 (2015)]. Two novel lead-free antiferroelectric (AFE) solid solutions, (1-x)NaNbO 3 -xCaZrO 3 and (1-x)NaNbO 3 -xSrZrO 3 , have been found to exhibit the double polarization hysteresis typical of a reversible AFE ↔ ferroelectric (FE) phase transition. In this study, as demonstrated by (1-x)NaNbO 3 -xCaZrO 3 system, the influence of chemical modification and electrical poling on the AFE/FE phase stability was investigated, primarily focusing on the microstructural and crystallographic evolutions. Together with the macroscopic polarization hysteresis measurements, a well-demonstrated structure-property relationship was presented. It was found that the CaZrO 3 substitution into NaNbO 3 can effectively destabilize the FE Q phase and correspondingly lead to a spontaneous reverting to AFE P phase. In contrast to the reversible AFE ↔ FE phase transition, the domain morphology evolution exhibits irreversible nature with a growing process of the orientational domains after applying electric field. Moreover, a multiple-zone axes electron diffraction map of P and Q phases has been summarized and is believed to be an efficient diagram to determine the AFE/FE nature of the NaNbO 3 -based systems

A three-dimensional polarization domain retrieval method from electron diffraction data

International Nuclear Information System (INIS)

Pennington, Robert S.; Koch, Christoph T.

2015-01-01

We present an algorithm for retrieving three-dimensional domains of picometer-scale shifts in atomic positions from electron diffraction data, and apply it to simulations of ferroelectric polarization in BaTiO 3 . Our algorithm successfully and correctly retrieves polarization domains in which the Ti atom positions differ by less than 3 pm (0.4% of the unit cell diagonal distance) with 5 and 10 nm depth resolution along the beam direction, and we also retrieve unit cell strain, corresponding to tetragonal-to-cubic unit cell distortions, for 10 nm domains. Experimental applicability is also discussed. - Highlights: • We show a retrieval method for ferroelectric polarization from TEM diffraction data. • Simulated strain and polarization variations along the beam direction are retrieved. • This method can be used for 3D strain and polarization mapping without specimen tilt

Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO{sub 3}-buffered ferroelectric BaTiO{sub 3} film on GaAs

Energy Technology Data Exchange (ETDEWEB)

Qiao, Qiao [Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States); Materials Science and Technology Department, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Zhang, Yuyang [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States); Materials Science and Technology Department, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Contreras-Guerrero, Rocio; Droopad, Ravi [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States); Materials Science and Technology Department, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37240 (United States); Pennycook, Stephen J. [Department of Materials Science and Engineering, National University of Singapore, Singapore 117575 (Singapore); Ogut, Serdar; Klie, Robert F. [Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

2015-11-16

The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO{sub 3} thin films grown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO{sub 3} grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. Here, we use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectric polarization of a BaTiO{sub 3} thin film grown on GaAs. We demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO{sub 3}), and propose that the presence of surface charge screening allows the formation of switchable domains.

Switching of the polarization of ferroelectric-ferroelastic gadolinium molybdate in a magnetic field

Science.gov (United States)

Yakushkin, E. D.

2017-10-01

A change in the character of the electric switching of polydomain ferroelectric-ferroelastic gadolinium molybdate in an external magnetic field has been detected. This change has been attributed to a magnetically stimulated increase in the pinning of domain walls. Under certain conditions, the loop of switchable polarization is degenerated into an ellipse characteristic of a linear insulator with leakage current.

Twice electric field poling for engineering multiperiodic Hex-PPLN microstructures

Science.gov (United States)

Pagliarulo, Vito; Gennari, Oriella; Rega, Romina; Mecozzi, Laura; Grilli, Simonetta; Ferraro, Pietro

2018-05-01

Satellite bulk ferroelectric domains were observed everywhere around the larger main inverted ferroelectric domains when a Twice Electric Field Poling (TEFP) process is applied on a z-cut lithium niobate substrate. TEFP approach can be very advantageous for engineering multiperiodic poled microstructures in ferroelectrics. In fact, it is very difficult in the experimental practice to avoid underpoling and/or overpoling when structures with different sizes are requested in the same crystal. TEFP was applied to photoresist patterned crystal with 100 μm period and then a second EP step, with a ten-times smaller periodicity of 10 μm, was accomplished on the same sample. The intriguing fact is that the shorter 10 μm pattern disappeared everywhere except that around the larger satellite ferroelectric domains. The formation of this double-periodicity in the reversed ferroelectric domains occurs very easily and in repeatedly way. We have experimentally investigated the formation of such HePPLN structures by an interference microscopy in digital holography (DH) modality. The reported results demonstrate the possibility of fabricating multi-periodic structures and open the way to investigate the possibility to achieve hierarchical PPLN structures by multiple subsequent electric poling processes.

Distributions of electric and elastic fields at domain boundaries

International Nuclear Information System (INIS)

Novak, Josef; Fousek, Jan; Maryska, Jiri; Marvan, Milan

2005-01-01

In this paper we describe the application of the finite element method (FEM) in modelling spatial distributions of electric and elastic fields in a ferroelectric crystals with two domains separated by a 90 deg. domain wall. The domain boundary is idealized as a two-dimensional defect in an electro-elastic continuum. It represents the source of inhomogenity and internal distortion in both elastic and electric fields. The main results are distributions of electric field, strain and mechanical force along the domain boundary

Photoelectron spectroscopic and microspectroscopic probes of ferroelectrics

Science.gov (United States)

Tǎnase, Liviu C.; Abramiuc, Laura E.; Teodorescu, Cristian M.

2017-12-01

This contribution is a review of recent aspects connected with photoelectron spectroscopy of free ferroelectric surfaces, metals interfaced with these surfaces, graphene-like layers together with some exemplifications concerning molecular adsorption, dissociations and desorptions occurring from ferroelectrics. Standard photoelectron spectroscopy is used nowadays in correlation with other characterization techniques, such as piezoresponse force microscopy, high resolution transmission electron spectroscopy, and ferroelectric hysteresis cycles. In this work we will concentrate mainly on photoelectron spectroscopy and spectro-microscopy characterization of ferroelectric thin films, starting from atomically clean ferroelectric surfaces of lead zirco-titanate, then going towards heterostructures using this material in combination with graphene-like carbon layers or with metals. Concepts involving charge accumulation and depolarization near surface will be revisited by taking into account the newest findings in this area.

Ferroelectric capacitor with reduced imprint

Science.gov (United States)

Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

1997-01-01

An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

Flexible graphene–PZT ferroelectric nonvolatile memory

International Nuclear Information System (INIS)

Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

2013-01-01

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

Flexible graphene-PZT ferroelectric nonvolatile memory.

Science.gov (United States)

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

Science.gov (United States)

Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

2016-02-19

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yurchuk, Ekaterina

2015-02-06

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Characterization of domain reorientation in Pzt ceramics

International Nuclear Information System (INIS)

Lente, Manuel Henrique; Povoa, Jose Marques; Eiras, Jose Antonio

1997-01-01

The dynamic of domains in ferroelectric materials has been intensively studied due to its importance in applications like non volatile memories. Domain reorientation was characterized in lead zirconate titanate samples, pure and doped, through measurements of the transient current, after reversal a electric field. The reorientation behavior of the domains showed to be influenced by type of impurity (Nb or Fe) and by the electrical field intensity. Analysis of the experimental results reveals mainly the existence of two contributions: a dependent (t 0.1 s) of the field intensity. (author)

Negative capacitance in a ferroelectric capacitor.

Science.gov (United States)

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Magnetic stripes and holes: Complex domain patterns in perforated films with weak perpendicular anisotropy

Directory of Open Access Journals (Sweden)

F. Valdés-Bango

2017-05-01

Full Text Available Hexagonal antidot arrays have been patterned on weak perpendicular magnetic anisotropy NdCo films by e-beam lithography and lift off. Domain structure has been characterized by Magnetic Force Microscopy at remanence. On a local length scale, of the order of stripe pattern period, domain configuration is controlled by edge effects within the stripe pattern: stripe domains meet the hole boundary at either perpendicular or parallel orientation. On a longer length scale, in-plane magnetostatic effects dominate the system: clear superdomains are observed in the patterned film with average in-plane magnetization along the easy directions of the antidot array, correlated over several antidot array cells.

Magnetic stripes and holes: Complex domain patterns in perforated films with weak perpendicular anisotropy

Science.gov (United States)

Valdés-Bango, F.; Vélez, M.; Alvarez-Prado, L. M.; Alameda, J. M.; Martín, J. I.

2017-05-01

Hexagonal antidot arrays have been patterned on weak perpendicular magnetic anisotropy NdCo films by e-beam lithography and lift off. Domain structure has been characterized by Magnetic Force Microscopy at remanence. On a local length scale, of the order of stripe pattern period, domain configuration is controlled by edge effects within the stripe pattern: stripe domains meet the hole boundary at either perpendicular or parallel orientation. On a longer length scale, in-plane magnetostatic effects dominate the system: clear superdomains are observed in the patterned film with average in-plane magnetization along the easy directions of the antidot array, correlated over several antidot array cells.

Three-mode coupling interference patterns in the dynamic structure factor of a relaxor ferroelectric

Science.gov (United States)

Manley, M. E.; Abernathy, D. L.; Sahul, R.; Stonaha, P. J.; Budai, J. D.

2016-09-01

A longstanding controversy for relaxor ferroelectrics has been the origin of the "waterfall" effect in the phonon dispersion curves, in which low-energy transverse phonons cascade into vertical columns. Originally interpreted as phonons interacting with polar nanoregions (PNRs), it was later explained as an interference effect of coupling damped optic and acoustic phonons. In light of a recently discovered PNR vibrational mode near the "waterfall" wave vector [M. E. Manley, J. W. Lynn, D. L. Abernathy, E. D. Specht, O. Delaire, A. R. Bishop, R. Sahul, and J. D. Budai, Nat. Commun. 5, 3683 (2014), 10.1038/ncomms4683], we have reexamined this feature using neutron scattering on [100]-poled PMN-30%PT [0.6 Pb (M g1 /3N b2 /3 ) O3-0.3 PbTi O3] . We find that the PNR mode couples to both optic and acoustic phonons and that this results in complex patterns in the dynamic structure factor, including intensity pockets and peaks localized in momentum-energy space. These features are fully explained by extending the mode-coupling model to include three coupled damped harmonic oscillators representing the transverse optic, acoustic, and PNR modes.

Tip-induced domain growth on the non-polar cuts of lithium niobate single-crystals

Science.gov (United States)

Alikin, D. O.; Ievlev, A. V.; Turygin, A. P.; Lobov, A. I.; Kalinin, S. V.; Shur, V. Ya.

2015-05-01

Currently, ferroelectric materials with designed domain structures are considered as a perspective material for new generation of photonic, data storage, and data processing devices. Application of external electric field is the most convenient way of the domain structure formation. Lots of papers are devoted to the investigation of domain kinetics on polar surface of crystals while the forward growth remains one of the most mysterious stages due to lack of experimental methods allowing to study it. Here, we performed tip-induced polarization reversal on X- and Y-non-polar cuts in single-crystal of congruent lithium niobate which allows us to study the forward growth with high spatial resolution. The revealed difference in the shape and length of domains induced on X- and Y-cuts is beyond previously developed theoretical approaches used for the theoretical consideration of the domains growth at non-polar ferroelectric surfaces. To explain experimental results, we used kinetic approach with anisotropy of screening efficiency along different crystallographic directions.

Improper ferroelectrics as high-efficiency energy conversion materials

International Nuclear Information System (INIS)

Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki

2017-01-01

An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O_3 and BaTiO_3, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca_0_._8_4Sr_0_._1_6)_8[AlO_2]_1_2(MoO_4)_2 (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Computational study of textured ferroelectric polycrystals: Dielectric and piezoelectric properties of template-matrix composites

Science.gov (United States)

Zhou, Jie E.; Yan, Yongke; Priya, Shashank; Wang, Yu U.

2017-01-01

Quantitative relationships between processing, microstructure, and properties in textured ferroelectric polycrystals and the underlying responsible mechanisms are investigated by phase field modeling and computer simulation. This study focuses on three important aspects of textured ferroelectric ceramics: (i) grain microstructure evolution during templated grain growth processing, (ii) crystallographic texture development as a function of volume fraction and seed size of the templates, and (iii) dielectric and piezoelectric properties of the obtained template-matrix composites of textured polycrystals. Findings on the third aspect are presented here, while an accompanying paper of this work reports findings on the first two aspects. In this paper, the competing effects of crystallographic texture and template seed volume fraction on the dielectric and piezoelectric properties of ferroelectric polycrystals are investigated. The phase field model of ferroelectric composites consisting of template seeds embedded in matrix grains is developed to simulate domain evolution, polarization-electric field (P-E), and strain-electric field (ɛ-E) hysteresis loops. The coercive field, remnant polarization, dielectric permittivity, piezoelectric coefficient, and dissipation factor are studied as a function of grain texture and template seed volume fraction. It is found that, while crystallographic texture significantly improves the polycrystal properties towards those of single crystals, a higher volume fraction of template seeds tends to decrease the electromechanical properties, thus canceling the advantage of ferroelectric polycrystals textured by templated grain growth processing. This competing detrimental effect is shown to arise from the composite effect, where the template phase possesses material properties inferior to the matrix phase, causing mechanical clamping and charge accumulation at inter-phase interfaces between matrix and template inclusions. The computational

Role of oxygen disorder in the ferroelectric phase transitions for various materials

International Nuclear Information System (INIS)

Pasciak, Marek; Goossens, Darren J.; Welberry, Richard T.

2009-01-01

Full text: The nature of ferroelectric phase transitions in many materials have been questioned for many years. Whereas some methods provide definitive evidence of mode softening, other methods, such as local structure probes, indicate the existence of disorder in the paraelectric phase [1]. It is now widely accepted, that the ferroelectric phase transition usually has two components - soft-mode displacive and order-disorder. The latter leads inevitably to some form of pretransitional clusters in the paraelectric phase [2]. In relaxor ferroelectrics, in which disorder drives the transformation, such polar clusters can exist over a wide range of temperatures. Diffuse scattering is a powerful tool for studying such disorder and also for studying short-range order correlations in atomic displacements [3]. In this work we concentrate on the role of oxygens in various materials. By different means of molecular simulations we build models in which the oxygens constitute a framework for short range order correlations. This leads to a discussion of the differences between x-ray and neutron diffuse scattering patterns that may arise due to the disorder of oxygens.

Ferroelectric BaTiO3 and LiNbO3 Nanoparticles Dispersed in Ferroelectric Liquid Crystal Mixtures: Electrooptic and Dielectric (Postprint)

Science.gov (United States)

2016-10-14

strength for non- doped LF4 and LiNbO3/LF4 nanocolloids at temperature 30C. 146 R. K . SHUKLA ET AL. 6 Distribution A. Approved for public release (PA...AFRL-RX-WP-JA-2017-0210 FERROELECTRIC BaTiO3 AND LiNbO3 NANOPARTICLES DISPERSED IN FERROELECTRIC LIQUID CRYSTAL MIXTURES: ELECTROOPTIC...COMMAND UNITED STATES AIR FORCE Ferroelectric BaTiO3 and LiNbO3 nanoparticles dispersed in ferroelectric liquid crystal mixtures: Electrooptic and

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

Energy Technology Data Exchange (ETDEWEB)

Daranciang, Dan

2012-02-15

We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

International Nuclear Information System (INIS)

Daranciang, Dan

2012-01-01

We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

High-performance ferroelectric memory based on phase-separated films of polymer blends

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Almadhoun, Mahmoud N.; Odeh, Ihab N.; Cha, Dong Kyu; Alshareef, Husam N.

2013-01-01

High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance ferroelectric memory based on phase-separated films of polymer blends

KAUST Repository

Khan, Yasser

2013-10-29

High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ferroelectric nanostructure having switchable multi-stable vortex states

Science.gov (United States)

Naumov, Ivan I [Fayetteville, AR; Bellaiche, Laurent M [Fayetteville, AR; Prosandeev, Sergey A [Fayetteville, AR; Ponomareva, Inna V [Fayetteville, AR; Kornev, Igor A [Fayetteville, AR

2009-09-22

A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

Ferroelectric devices, interconnects, and methods of manufacture thereof

KAUST Repository

Alshareef, Husam N.; Unnat, Bhansali; Khan, Mohd Adnan; Saleh, Moussa M.; Odeh, Ihab N.

2013-01-01

A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

Ferroelectric devices, interconnects, and methods of manufacture thereof

KAUST Repository

Alshareef, Husam N.

2013-12-12

A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

Hybrid dual gate ferroelectric memory for multilevel information storage

KAUST Repository

Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

2015-01-01

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field

The Relationship between Defense Patterns and DSM-5 Maladaptive Personality Domains

Science.gov (United States)

Granieri, Antonella; La Marca, Luana; Mannino, Giuseppe; Giunta, Serena; Guglielmucci, Fanny; Schimmenti, Adriano

2017-01-01

Aim: Research has extensively examined the relationship between defense mechanisms (DM) and personality traits. However, no study to date has explored if specific defenses (alone or in combination) are able to predict dysfunctional variants of personality domains, as conceived in the alternative DSM-5 model for personality disorders. This study aimed to investigate the relationship between DMs and DSM-5 maladaptive personality domains among adults. Materials and Methods: Three hundred and twenty-eight adults aged between 18 and 64 years old completed measures on DMs and maladapive personality domains. Regression analyses were performed to determine which DMs predicted the maladaptive personality domains of negative affectivity, detachment, antagonism, disinhibition, and psychoticism. Results: According to psychoanalytic literature, results showed that immature defenses positively predicted maladaptive personality domain scores, whereas mature defenses were generally related with better personality functioning. Moreover, different defense patterns emerged as significant predictors of the maladaptive personality domains comprised in the alternative DSM-5 model for personality disorder. Discussion: Our findings support the view that defense patterns represent core components of personality and its disorders, and suggest that an increased use of immature defenses and a reduced use of mature defenses have a negative impact on the development of personality. PMID:29163301

Effects of configurational changes on molecular dynamics in polyvinylidene fluoride and poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers

Energy Technology Data Exchange (ETDEWEB)

Jalarvo, N., E-mail: jalarvonh@ornl.gov, E-mail: abhijit.pramanick@gmail.com, E-mail: omardiallos@ornl.gov [Jülich Centre for Neutron Science, Forschungszentrum Jülich GmbH, 52428 Jülich (Germany); Chemical and Engineering Materials Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Pramanick, A., E-mail: jalarvonh@ornl.gov, E-mail: abhijit.pramanick@gmail.com, E-mail: omardiallos@ornl.gov [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Do, C. [Biology and Soft-Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Diallo, S. O., E-mail: jalarvonh@ornl.gov, E-mail: abhijit.pramanick@gmail.com, E-mail: omardiallos@ornl.gov [Chemical and Engineering Materials Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2015-08-24

We present a comparative study of proton dynamics in unpoled non-ferroelectric polymer polyvinylidene fluoride (PVDF) and in its trifluoroethylene containing ferroelectric copolymer (with 70/30 molar proportion), using quasi-elastic neutron scattering. The neutron data reveal the existence of two distinct types of molecular motions in the temperature range investigated. The slower motion, which is characterized in details here, is ascribed to protons jump diffusion along the polymeric carbon chains, while the faster motion could be attributed to localized rotational motion of methylene groups. At temperatures below the Curie point (T{sub c} ∼ 385 K) of the composite polymer, the slower diffusive mode experiences longer relaxation times in the ferroelectric blend than in the bare PVDF, although the net corresponding diffusion coefficient remains comparatively the same in both polymers with characteristic activation energy of E{sub A} ≈ 27–33 kJ/mol. This arises because of a temperature dependent jump length r{sub 0}, which we observe to be effectively longer in the copolymer, possibly due to the formation of ordered ferroelectric domains below T{sub c}. Above T{sub c}, there is no appreciable difference in r{sub 0} between the two systems. This observation directly relates the known dependence of T{sub c} on molar ratio to changes in r{sub 0}, providing fundamental insight into the ferroelectric properties of PVDF-based copolymers.

Improper ferroelectrics as high-efficiency energy conversion materials

Energy Technology Data Exchange (ETDEWEB)

Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki [Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2017-05-15

An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O{sub 3} and BaTiO{sub 3}, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca{sub 0.84}Sr{sub 0.16}){sub 8}[AlO{sub 2}]{sub 12}(MoO{sub 4}){sub 2} (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Organic non-volatile memories from ferroelectric phase-separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

2008-07-01

New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

NARCIS (Netherlands)

Cai, R.; Kassa, H.G.; Haouari, R.; Marrani, A.; Geerts, Y.H.; Ruzié, C.; Breemen, A.J.J.M. van; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

2016-01-01

Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and

Controlling the properties of ferroelectric-nickelate interfaces

Science.gov (United States)

Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

2015-03-01

Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga,In)As with in-plane anisotropy

Science.gov (United States)

Herrera Diez, L.; Rapp, C.; Schoch, W.; Limmer, W.; Gourdon, C.; Jeudy, V.; Honolka, J.; Kern, K.

2012-04-01

Appropriate adjustment of the tensile strain in (Ga, Mn)As/(Ga,In)As films allows for the coexistence of in-plane magnetic anisotropy, typical of compressively strained (Ga, Mn)As/GaAs films, and the so-called cross-hatch dislocation pattern seeded at the (Ga,In)As/GaAs interface. Kerr microscopy reveals a close correlation between the in-plane magnetic domain and dislocation patterns, absent in compressively strained materials. Moreover, the magnetic domain pattern presents a strong asymmetry in the size and number of domains for applied fields along the easy [11¯0] and hard [110] directions which is attributed to different domain wall nucleation/propagation energies. This strong influence of the dislocation lines in the domain wall propagation/nucleation provides a lithography-free route to the effective trapping of domain walls in magneto-transport devices based on (Ga, Mn)As with in-plane anisotropy.

The dynamic interplay of plasma membrane domains and cortical microtubules in secondary cell wall patterning

Directory of Open Access Journals (Sweden)

Yoshihisa eOda

2013-12-01

Full Text Available Patterning of the cellulosic cell wall underlies the shape and function of plant cells. The cortical microtubule array plays a central role in the regulation of cell wall patterns. However, the regulatory mechanisms by which secondary cell wall patterns are established through cortical microtubules remain to be fully determined. Our recent study in xylem vessel cells revealed that a mutual inhibitory interaction between cortical microtubules and distinct plasma membrane domains leads to distinctive patterning in secondary cell walls. Our research revealed that the recycling of active and inactive ROP proteins by a specific GAP and GEF pair establishes distinct de novo plasma membrane domains. Active ROP recruits a plant-specific microtubule-associated protein, MIDD1, which mediates the mutual interaction between cortical microtubules and plasma membrane domains. In this mini review, we summarize recent research regarding secondary wall patterning, with a focus on the emerging interplay between plasma membrane domains and cortical microtubules through MIDD1 and ROP.

Kinetics of zigzag domain boundaries in gadolinium molybdate

International Nuclear Information System (INIS)

Alekseev, A.N.; Proklov, A.L.; Tikhomirova, N.A.; Shuvalov, L.A.; AN SSSR, Moscow. Inst. Kristallografii)

1987-01-01

Kinetics of zigzag domain boundaries (3DB) in ferroelectric gadolinium molybdate (GMO) crystal was investigated at different amplitude, duration and growth rate of external electric field. The results verify the difference between shifting rates of two 3DB constituents of wedge-shaped systems, growing with field change rate increase

Chemical segregation and self polarisation in ferroelectrics

Directory of Open Access Journals (Sweden)

Bernard E. Watts

2009-06-01

Full Text Available Chemical partitioning or segregation is commonly encountered in solid-state syntheses. It is driven by compositional, thermal and electric field gradients. These phenomena can be quite extreme in thin films and lead to notable effects on the electrical properties of ferroelectrics. The segregation in ferroelectric thin films will be illustrated and the mechanisms explained in terms of diffusion processes driven by a potential gradient of the oxygen. The hypothesis can also explain self polarisation and imprint in ferroelectric hysteresis.

Kinetic approach to the explanation of fatigue effect in ferroelectric materials

International Nuclear Information System (INIS)

Shur, V.Ya.; Rumyantsev, E.L.; Nikolaeva, E.V.; Shishkin, E.I.; Baturin, I.S.

2002-01-01

The new kinetic approach to explanation of the fatigue effect in the ferroelectrics consistent change in the area and geometry of the switched-over part of the sample by the cyclic switch-over, accompanied by the origination and growth of the kinetic frozen domains, is considered. It is supposed, that the fatigue effect is conditioned by the self-organizing formation of the spatially nonuniform internal shift field due to the delay of the voluminous scanning of the depolarizing field. The changes in the value of the switched charge and the switch-over current amplitude, calculated through the computerized simulation of the domains kinetics by the cyclic switch-over are in good agreement with the experimental data, obtained in thin films of the lead zirconate-titanate [ru

Domain switching in single-phase multiferroics

Science.gov (United States)

Jia, Tingting; Cheng, Zhenxiang; Zhao, Hongyang; Kimura, Hideo

2018-06-01

Multiferroics are a time-honoured research subject by reason for their tremendous application potential in the information industry, such as in multi-state information storage devices and new types of sensors. An outburst of studies on multiferroicity has been witnessed in the 21st century, although this field has a long research history since the 19th century. Multiferroicity has now become one of the hottest research topics in condensed matter physics and materials science. Numerous efforts have been made to investigate the cross-coupling phenomena among ferroic orders such as ferroelectricity, (anti-)ferromagnetism, and ferroelasticity, especially the coupling between electric and magnetic orderings that would account for the magnetoelectric (ME) effect in multiferroic materials. The magnetoelectric properties and coupling behavior of single phase multiferroics are dominated by their domain structures. It was also noted that, however, the multiferroic materials exhibit very complicated domain structures. Studies on domain structure characterization and domain switching are a crucial step in the exploration of approaches to the control and manipulation of magnetic (electric) properties using an electric (magnetic) field or other means. In this review, following a concise outline of our current basic knowledge on the magnetoelectric (ME) effect, we summarize some important research activities on domain switching in single-phase multiferroic materials in the form of single crystals and thin films, especially domain switching behavior involving strain and the related physics in the last decade. We also introduce recent developments in characterization techniques for domain structures of ferroelectric or multiferroic materials, which have significantly advanced our understanding of domain switching dynamics and interactions. The effects of a series of issues such as electric field, magnetic field, and stress effects on domain switching are been discussed as well. It

Impact induced depolarization of ferroelectric materials

Science.gov (United States)

Agrawal, Vinamra; Bhattacharya, Kaushik

2018-06-01

We study the large deformation dynamic behavior and the associated nonlinear electro-thermo-mechanical coupling exhibited by ferroelectric materials in adiabatic environments. This is motivated by a ferroelectric generator which involves pulsed power generation by loading the ferroelectric material with a shock, either by impact or a blast. Upon impact, a shock wave travels through the material inducing a ferroelectric to nonpolar phase transition giving rise to a large voltage difference in an open circuit situation or a large current in a closed circuit situation. In the first part of this paper, we provide a general continuum mechanical treatment of the situation assuming a sharp phase boundary that is possibly charged. We derive the governing laws, as well as the driving force acting on the phase boundary. In the second part, we use the derived equations and a particular constitutive relation that describes the ferroelectric to nonpolar phase transition to study a uniaxial plate impact problem. We develop a numerical method where the phase boundary is tracked but other discontinuities are captured using a finite volume method. We compare our results with experimental observations to find good agreement. Specifically, our model reproduces the observed exponential rise of charge as well as the resistance dependent Hugoniot. We conclude with a parameter study that provides detailed insight into various aspects of the problem.

Geometric shape control of thin film ferroelectrics and resulting structures

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

2000-01-01

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

Emergent Low-Symmetry Phases and Large Property Enhancements in Ferroelectric KNbO ₃ Bulk Crystals

Energy Technology Data Exchange (ETDEWEB)

Lummen, Tom T. A. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA; Leung, J. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA; Kumar, Amit [School of Mathematics and Physics, Queen' s University Belfast, University Road, Belfast BT71NN Northern Ireland UK; Wu, X. [Department of Physics, University of Texas at Austin, Austin TX 78712 USA; Ren, Y. [Department of Physics, University of Texas at Austin, Austin TX 78712 USA; VanLeeuwen, Brian K. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA; Haislmaier, Ryan C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA; Holt, Martin [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Lai, Keji [Department of Physics, University of Texas at Austin, Austin TX 78712 USA; Kalinin, Sergei V. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge TN 37831 USA; Gopalan, Venkatraman [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA

2017-06-19

The design of new or enhanced functionality in materials is traditionally viewed as requiring the discovery of new chemical compositions through synthesis. Large property enhancements may however also be hidden within already well-known materials, when their structural symmetry is deviated from equilibrium through a small local strain or field. Here, the discovery of enhanced material properties associated with a new metastable phase of monoclinic symmetry within bulk KNbO3 is reported. This phase is found to coexist with the nominal orthorhombic phase at room temperature, and is both induced by and stabilized with local strains generated by a network of ferroelectric domain walls. While the local microstructural shear strain involved is only approximate to 0.017%, the concurrent symmetry reduction results in an optical second harmonic generation response that is over 550% higher at room temperature. Moreover, the meandering walls of the low-symmetry domains also exhibit enhanced electrical conductivity on the order of 1 S m(-1). This discovery reveals a potential new route to local engineering of significant property enhancements and conductivity through symmetry lowering in ferroelectric crystals.

The domain theory: patterns for knowledge and software reuse

National Research Council Canada - National Science Library

Sutcliffe, Alistair

2002-01-01

..., retrieval system, or any other means, without prior written permission of the publisher. Lawrence Erlbaum Associates, Inc., Publishers 10 Industrial Avenue Mahwah, New Jersey 07430 Library of Congress Cataloging-in-Publication Data Sutcliffe, Alistair, 1951- The domain theory : patterns for knowledge and software reuse / Alistair Sutcl...

Ferroelectrics: A pathway to switchable surface chemistry and catalysis

Science.gov (United States)

Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

2016-08-01

It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

Static Characteristics of the Ferroelectric Transistor Inverter

Science.gov (United States)

Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

2010-01-01

The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

Electrostatic micromotor based on ferroelectric ceramics

Science.gov (United States)

Baginsky, I. L.; Kostsov, E. G.

2004-11-01

A new electrostatic micromotor is described that utilizes the electromechanical energy conversion principle earlier described by the authors. The electromechanical energy conversion is based on reversible electrostatic rolling of thin metallic films (petals) on a ferroelectric surface. The motor's active media are layers of ferroelectric ceramics (about 100 µm in thickness). The characteristics of the electrostatic rolling of the petals on different ceramic surfaces are studied, as well as the dynamic characteristics of the micromotors. It is shown that the use of antiferroelectric material allows one to reach a specific energy capacitance comparable to that of the micromotors based on ferroelectric films and to achieve a specific power of 30-300 µW mm-2.

Field-effect transistor memories based on ferroelectric polymers

Science.gov (United States)

Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

2017-11-01

Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

Piezoelectric properties of tetragonal single-domain Mn-doped NBT-6 %BT single crystals

Czech Academy of Sciences Publication Activity Database

Guennou, Mael; Savinov, Maxim; Drahokoupil, Jan; Luo, H.; Hlinka, Jiří

2014-01-01

Roč. 116, č. 1 (2014), s. 225-228 ISSN 0947-8396 R&D Projects: GA ČR GAP204/10/0616; GA MPO FR-TI2/165 Institutional support: RVO:68378271 Keywords : peizoelectricity * ferroelectric domains * domain-engineering * Raman spectroscopy * lead-free Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

Science.gov (United States)

Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

2012-01-01

In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

Quantum mechanical studies of complex ferroelectric perovskites

Science.gov (United States)

Ramer, Nicholas John

In many electronic device applications, there is a need to interconvert electrical energy and other types of energy. Ferroelectric materials, which possess a voltage-dependent polarization, can enable this energy conversion process. Because of the broad interest in ferroelectric materials for these devices, there is a critical research effort, both experimental and theoretical, to understand these materials and aid in the development of materials with improved properties. This thesis presents detailed quantum mechanical investigations of the behavior of a complex ferroelectric perovskite under applied stress. In particular, we have chosen to study the solid solution PbZr1-xTix O3 (PZT). Since the study of ferroelectricity involves understanding both its structural and electronic signatures in materials, it has necessitated the development of a novel theoretical technique which improves the accuracy of the pseudopotentials used in our density functional theory calculations as well as a new method for constructing three-dimensional atomistic responses to small amounts of external stress. To examine the material's behavior under larger amounts of stress, we have studied the behavior of a composition of PZT lying near a structural phase boundary. On either side of the phase boundary, the material is characterized by a different polarization direction and may easily be switched between phases by applying external stress. In addition to stress-induced phase transitions, most ferroelectric materials also have composition dependent phase boundaries. Since different compositions of PZT would require increased computational effort, we have formulated an improved virtual crystal approach that makes tractable the study of the entire composition range. Using this method, we have been able to show for the first time via first-principles calculations, a composition dependent phase transition in a ferroelectric material. This thesis has accomplished three important goals: new

Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

Science.gov (United States)

Paik, Young Hun

the two materials, this dissertation focused on material synthesis for low cost solution process for both materials, fabrication of various device structures and electrical/optical characterization to understand the underlying physics. We successfully demonstrated lead sulfide quantum dots (PbS QDs) and lead zirconate titanate nanoparticles (PZT NPs) in an aqueous solution and fabricated a photosensitive device. Solution based low-temperature process was used to fabricate a PbS QD and a PZT NP device. We exhibited a superior photoresponse and ferroelectric photovoltaic properties with the novel PZT NP device and studied the physics on domain wall effect and internal polarity effect. PZT NP was mainly investigated because PZT NP device is the first report as a photosensitive device with a successful property demonstration, as we know of. PZT's crystalline structure and the size of the nanocrystals were studied using X-ray diffraction and TEM (Transmission electron microscopy) respectively. We observed < 100 nm of PZT NPs and this result matched with DLS (dynamic light scattering) measurement. We fabricated ferroelectric devices using the PZT NPs for the various optical and electrical characterizations and verified ferroelectric properties including ferroelectric hysteresis loop. We also observed a typical ferroelectric photovoltaic effect from a PZT NP based device which was fabricated on an ITO substrate. We synthesized colloidal quantum dots (CQD) with the inexpensive soluble process. Fabricated PbS QD was used for the hybrid device with PZT thin films. J-V measured and the result shows superior open circuit voltage characteristics compared to conventional PbS QD PV devices, and resulting the improvement of the solar cell efficiency. This Ferroelectrics and Quantum Dots (FE-QDs) device also the first trial and the success as we know of.

Photo electron emission microscopy of polarity-patterned materials

International Nuclear Information System (INIS)

Yang, W-C; Rodriguez, B J; Gruverman, A; Nemanich, R J

2005-01-01

This study presents variable photon energy photo electron emission microscopy (PEEM) of polarity-patterned epitaxial GaN films, and ferroelectric LiNbO 3 (LNO) single crystals and PbZrTiO 3 (PZT) thin films. The photo electrons were excited with spontaneous emission from the tunable UV free electron laser (FEL) at Duke University. We report PEEM observation of polarity contrast and measurement of the photothreshold of each polar region of the materials. For a cleaned GaN film with laterally patterned Ga- and N-face polarities, we found a higher photoelectric yield from the N-face regions compared with the Ga-face regions. Through the photon energy dependent contrast in the PEEM images of the surfaces, we can deduce that the threshold of the N-face region is less than ∼4.9 eV while that of the Ga-face regions is greater than 6.3 eV. In both LNO and PZT, bright emission was detected from the negatively poled domains, indicating that the emission threshold of the negative domain is lower than that of the positive domain. For LNO, the measured photothreshold was ∼4.6 eV at the negative domain and ∼6.2 eV at the positive domain, while for PZT, the threshold of the negative domain was less than 4.3 eV. Moreover, PEEM observation of the PZT surface at elevated temperatures displayed that the domain contrast disappeared near the Curie temperature of ∼300 deg. C. The PEEM polarity contrast of the polar materials is discussed in terms of internal screening from free carriers and defects and the external screening due to adsorbed ions

Photo electron emission microscopy of polarity-patterned materials

Science.gov (United States)

Yang, W.-C.; Rodriguez, B. J.; Gruverman, A.; Nemanich, R. J.

2005-04-01

This study presents variable photon energy photo electron emission microscopy (PEEM) of polarity-patterned epitaxial GaN films, and ferroelectric LiNbO3 (LNO) single crystals and PbZrTiO3 (PZT) thin films. The photo electrons were excited with spontaneous emission from the tunable UV free electron laser (FEL) at Duke University. We report PEEM observation of polarity contrast and measurement of the photothreshold of each polar region of the materials. For a cleaned GaN film with laterally patterned Ga- and N-face polarities, we found a higher photoelectric yield from the N-face regions compared with the Ga-face regions. Through the photon energy dependent contrast in the PEEM images of the surfaces, we can deduce that the threshold of the N-face region is less than ~4.9 eV while that of the Ga-face regions is greater than 6.3 eV. In both LNO and PZT, bright emission was detected from the negatively poled domains, indicating that the emission threshold of the negative domain is lower than that of the positive domain. For LNO, the measured photothreshold was ~4.6 eV at the negative domain and ~6.2 eV at the positive domain, while for PZT, the threshold of the negative domain was less than 4.3 eV. Moreover, PEEM observation of the PZT surface at elevated temperatures displayed that the domain contrast disappeared near the Curie temperature of ~300 °C. The PEEM polarity contrast of the polar materials is discussed in terms of internal screening from free carriers and defects and the external screening due to adsorbed ions.

Ferroelectric relaxor Ba(TiCe)O3

International Nuclear Information System (INIS)

Chen Ang; Zhi Jing; Yu Zhi

2002-01-01

The dielectric behaviour of Ba(Ti 1-y Ce y )O 3 solid solutions (y=0-0.3) has been studied. A small amount of Ce doping (y=0.02) has weak influence on the dielectric behaviour of Ba(Ti 1-y Ce y )O 3 . With increasing Ce concentration, three phase transitions of pure BaTiO 3 are pinched into one rounded dielectric peak with frequency dispersion, and the relaxation time follows the Vogel-Fulcher relation. The evolution from a normal ferroelectric to a ferroelectric relaxor is emphasized. High strains (S=∼0.1-0.19%) with a small hysteresis under ac fields are obtained in ferroelectric relaxors Ba(Ti 1-y Ce y )O 3 . The physical mechanism of the relaxation process, the pinching effect of the phase transitions and their influence on the ferroelectric and electrostrictive behaviour are discussed. (author)

Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields

Energy Technology Data Exchange (ETDEWEB)

Genenko, Yuri A., E-mail: genenko@mm.tu-darmstadt.de; Hirsch, Ofer [Technische Universität Darmstadt, Darmstadt (Germany); Erhart, Paul [Chalmers University of Technology, Gothenburg (Sweden)

2014-03-14

Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1 V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO{sub 3} is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3 V.

Gamma Radiation Damage Evaluation Studies on Ferroelectric La and Nb doped PZT Related Ceramics

International Nuclear Information System (INIS)

Cruz, Carlos M.; Pinnera, Ibrahin; Rodriguez, Arturo; Durruti, Ma. Dolores; Hernandez, Moises; Yannez-Limon, J. M.

2015-01-01

It is reported the research results of the gamma radiation damage evaluation on La (crystalline sites A) and / or Nb (crystalline sites B) doped ferroelectric PZT ceramics, which were irradiated with 60 Co gamma rays by applying two irradiation regimes: up to 125 lGy (irradiation steps of 25 kGy) and up to 700 kGy (irradiation steps of 100 kGy) exposition doses. The X Ray Diffraction pattern profiles of the irradiated sample were analyzed and the induced crystalline structure changes are reported and correlated with the observed irradiation induced changes on their ferroelectric properties on regard of the irradiation doses. Through the application of the MCCM atom displacements calculations algorithm and code, total dpa profiles were calculated for the studied samples, as well as, the dpa contributions of the different atomics species, where the atom displacements threshold energies were extrapolated from the values calculated by Molecular Dynamic methods for BaTiO 3 system. An evaluation of the reported dpa calculated values on regard of the observed crystal structure and radiation response of the ferroelectric properties is presented. (Author)

PREFACE: Domain wall dynamics in nanostructures Domain wall dynamics in nanostructures

Science.gov (United States)

Marrows, C. H.; Meier, G.

2012-01-01

Domain structures in magnetic materials are ubiquitous and have been studied for decades. The walls that separate them are topological defects in the magnetic order parameter and have a wide variety of complex forms. In general, their investigation is difficult in bulk materials since only the domain structure on the surface of a specimen is visible. Cutting the sample to reveal the interior causes a rearrangement of the domains into a new form. As with many other areas of magnetism, the study of domain wall physics has been revitalised by the advent of nanotechnology. The ability to fabricate nanoscale structures has permitted the formation of simplified and controlled domain patterns; the development of advanced microscopy methods has permitted them to be imaged and then modelled; subjecting them to ultrashort field and current pulses has permitted their dynamics to be explored. The latest results from all of these advances are described in this special issue. Not only has this led to results of great scientific beauty, but also to concepts of great applicability to future information technologies. In this issue the reader will find the latest results for these domain wall dynamics and the high-speed processes of topological structures such as domain walls and magnetic vortices. These dynamics can be driven by the application of magnetic fields, or by flowing currents through spintronic devices using the novel physics of spin-transfer torque. This complexity has been studied using a wide variety of experimental techniques at the edge of the spatial and temporal resolution currently available, and can be described using sophisticated analytical theory and computational modelling. As a result, the dynamics can be engineered to give rise to finely controlled memory and logic devices with new functionality. Moreover, the field is moving to study not only the conventional transition metal ferromagnets, but also complex heterostructures, novel magnets and even other

Fast Ferroelectric L-Band Tuner for ILC Cavities

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L

2010-03-15

Design, analysis, and low-power tests are described on a 1.3 GHz ferroelectric tuner that could find application in the International Linear Collider or in Project X at Fermi National Accelerator Laboratory. The tuner configuration utilizes a three-deck sandwich imbedded in a WR-650 waveguide, in which ferroelectric bars are clamped between conducting plates that allow the tuning bias voltage to be applied. Use of a reduced one-third structure allowed tests of critical parameters of the configuration, including phase shift, loss, and switching speed. Issues that were revealed that require improvement include reducing loss tangent in the ferroelectric material, development of a reliable means of brazing ferroelectric elements to copper parts of the tuner, and simplification of the mechanical design of the configuration.

Mobility of ferroelastic domain walls in barium titanate

Czech Academy of Sciences Publication Activity Database

Hlinka, Jiří

2007-01-01

Roč. 349, - (2007), s. 49-54 ISSN 0015-0193 R&D Projects: GA ČR GA202/06/0411 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferroelectric and ferroelastic domains * BaTiO 3 * Ginzburg-Landau theory * mobility Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.427, year: 2007

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

Science.gov (United States)

Zhou, Xiaolan

Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

Quantitative grain-scale ferroic domain volume fractions and domain switching strains from three-dimensional X-ray diffraction data

DEFF Research Database (Denmark)

Oddershede, Jette; Majkut, Marta; Caosyd, Qinghua

2015-01-01

A method for the extension of the three-dimensional X-ray diffraction technique to allow the extraction of domain volume fractions in polycrystalline ferroic materials is presented. This method gives access to quantitative domain volume fractions of hundreds of independent embedded grains within...... are applied to tetragonal coarse-grained Ba0.88Ca0.12Zr0.06Ti0.94O3 and rhombohedral fine-grained (0.82)Bi0.5Na0.5TiO3–(0.18)Bi0.5K0.5TiO3 electroceramic materials. The fitted volume fraction information is used to calculate grain-scale non-180° ferroelectric domain switching strains. The absolute errors...

Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

2016-01-18

Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

A hybrid ferroelectric-flash memory cells

Science.gov (United States)

Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

2014-09-01

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

International Nuclear Information System (INIS)

Wang Longxiang; Yang Xiangbo; Chen Tongsheng

2009-01-01

In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

An Automated Ab Initio Framework for Identifying New Ferroelectrics

Science.gov (United States)

Smidt, Tess; Reyes-Lillo, Sebastian E.; Jain, Anubhav; Neaton, Jeffrey B.

Ferroelectric materials have a wide-range of technological applications including non-volatile RAM and optoelectronics. In this work, we present an automated first-principles search for ferroelectrics. We integrate density functional theory, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known and proposed ferroelectrics. We screen thousands of candidates using symmetry relations between nonpolar and polar structure pairs. We use two search strategies 1) polar-nonpolar pairs with the same composition and 2) polar-nonpolar structure type pairs. Results are automatically parsed, stored in a database, and accessible via a web interface showing distortion animations and plots of polarization and total energy as a function of distortion. We benchmark our results against experimental data, present new ferroelectric candidates found through our search, and discuss future work on expanding this search methodology to other material classes such as anti-ferroelectrics and multiferroics.

Lithium niobate. Defects, photorefraction and ferroelectric switching

Energy Technology Data Exchange (ETDEWEB)

Volk, Tatyana [Russian Academy of Sciences, Inst. for Crystallography, Moscow (Russian Federation); Woehlecke, Manfred [Osnabrueck Univ. (Germany). Fachbereich Physik

2008-07-01

The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO{sub 3}. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO{sub 3} crystals with different stoichiometry and of those doped with so-called ''optical-damage resistant'' impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO{sub 3} and the current situation of studies in the ferroelectric switching and domain structure of LiNbO{sub 3}, as well as the creation of periodically-poled structures for the optical frequency conversion. (orig.)

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces.

Science.gov (United States)

Taniyama, Tomoyasu

2015-12-23

By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications.

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

International Nuclear Information System (INIS)

Taniyama, Tomoyasu

2015-01-01

By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications. (topical review)

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

Energy Technology Data Exchange (ETDEWEB)

Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

2010-09-01

Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

Science.gov (United States)

Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

2006-09-15

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

On the study of the magnetic domain pattern via the initial magnetization curve

International Nuclear Information System (INIS)

Wu, T.

1997-01-01

This study inquires into the relationships between the initial magnetization curve and the magnetic domain pattern in the demagnetized states for amorphous TbFeCo as well as multilayered Co/Pd thin film samples. This was done specifically through an investigation of different demagnetized states of samples demagnetized by a variety of methods. The magnetic domain pattern for the sample demagnetized by an in-plane magnetic field and for the sample demagnetized by a perpendicular magnetic field was found to be quite different even though both states have zero magnetization. The former state has denser and finer domains than the latter. In addition, both states were studied in light of the initial magnetization curves obtained by measurements of the magneto-optic Kerr effect and the extraordinary Hall effect. Moreover, the initial magnetization for the fine domains increases with an increase in magnetic field, while for the coarse domains, the initial magnetization remains at zero for magnetic field below coercivity H c , then rises sharply to saturated magnetization when magnetic field is nearly equal to H c . copyright 1997 American Institute of Physics

Organic non-volatile memories from ferroelectric phase separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

2009-03-01

Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

A concept of ferroelectric microparticle propulsion thruster

International Nuclear Information System (INIS)

Yarmolich, D.; Vekselman, V.; Krasik, Ya. E.

2008-01-01

A space propulsion concept using charged ferroelectric microparticles as a propellant is suggested. The measured ferroelectric plasma source thrust, produced mainly by microparticles emission, reaches ∼9x10 -4 N. The obtained trajectories of microparticles demonstrate that the majority of the microparticles are positively charged, which permits further improvement of the thruster

Ferroelectric Phase Diagram of PVDF:PMMA

OpenAIRE

Li, Mengyuan; Stingelin, Natalie; Michels, Jasper J.; Spijkman, Mark-Jan; Asadi, Kamal; Feldman, Kirill; Blom, Paul W. M.; de Leeuw, Dago M.

2012-01-01

We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of alpha- and beta-phase PVDF was identified. Ferroelectric beta-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent annealing above the glass transition temperature of PMMA, close to the melting temperature of PVDF. Addition of PMMA suppresses the crystallizatio...

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

Science.gov (United States)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

Science.gov (United States)

Haridasan, Vrinda

Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

A novel readout integrated circuit for ferroelectric FPA detector

Science.gov (United States)

Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

2017-11-01

Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

Science.gov (United States)

2016-04-19

the free energy of the system [3,4,8]. Intensive research has been aimed at bypassing the intrinsic size limits imposed by the depolarization field...Page 1 of 21   Ultrafast photovoltaic response in ferroelectric nanolayers Dan Daranciang1,2, Matthew J. Highland3, Haidan Wen4, Steve M. Young5...ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on

Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

2016-05-31

Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

Effects on Ferroelectric Thin-Film Stacks and Devices for Piezoelectric MEMS Applications at Varied Total Ionizing Dose (TID)

Science.gov (United States)

2017-03-01

non -linearly mobile internal interfaces, e.g. domain walls and eventual phase boundaries. Radiation exposure is expected...zirconate titanate; PZT; actuator; radiation ; gamma; total ionization dose; TID; top electrode; Pt; IrO2; polarization; PE; hysteresis; permittivity...Hayashigawa, et. al., “A 2 Mbit Radiation Hardened Stackable Ferroelectric Memory” Non - Volatile Memory Technology Symposium, NVMTS 07, Nov 10-13, 2007 Albuquerque, NM, USA

Depolarization corrections to the coercive field in thin-film ferroelectrics

International Nuclear Information System (INIS)

Dawber, M; Chandra, P; Littlewood, P B; Scott, J F

2003-01-01

Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 μm to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

Depolarization corrections to the coercive field in thin-film ferroelectrics

CERN Document Server

Dawber, M; Littlewood, P B; Scott, J F

2003-01-01

Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

Review of crystal and domain structures in the PbZr_xTi_1-xO₃ solid solution

DEFF Research Database (Denmark)

Woodward, D.I.; Knudsen, J.; Reaney, I.M.

2005-01-01

Several intermediate phases have recently been identified in the PbZrxTi1-xO3 (PZT) phase diagram, located close to the antiferroelectric-ferroelectric and morphotropic phase boundaries. Superlattice reflections from some of these phases are clearly visible in the appropriate electron diffraction...... patterns and have therefore been used to provide further information concerning their symmetry. Here, the structural distortions giving rise to the new phases are discussed and their domain structures compared with those of tetragonal and rhombohedral PZT. Coherent structural arguments are presented...

AQUA-motion domain and metaphorization patterns in European Portuguese: AQUA-motion metaphor in AERO-motion and abstract domains

Directory of Open Access Journals (Sweden)

Hanna Jakubowicz Batoréo

2016-03-01

Full Text Available The AQUA-motion verbs – as studied by Majsak & Rahilina 2003 and 2007, Lander, Majsak & Rahilina [2005] 2008, 2012 and 2013, and Divjak & Lemmens 2007, and in European Portuguese (EP by Batoréo, 2007, 2008, 2009; Batoréo et al., 2007; Casadinho, 2007 – allow typically metaphorical uses, which we postulate can be organized in patterns. Our study shows that in European Portuguese there are two metaphorization patterns to be observed: (i AQUA-motion metaphor in AERO-motion domain and (ii AQUA-motion metaphor in abstract domain (e.g. abundance, arts, politics, etc.. In the first case, where the target domain of the metaphorization is the air, in EP we navigate through a crowd or we float in a waltz, whereas in the second, where it is abstract, we swim in money or in blood, and politicians navigate at sea or face floating currency in finances. In the present paper we survey the EP verbs of AQUA-motion metaphors in non-elicited data from electronically available language corpora (cf. Linguateca. In some cases comparisons are made with typologically diferent languages (as, e.g. Polish, cf. Prokofjeva’s 2007, Batoréo 2009.

Ferroelectric and magnetic properties in high-pressure synthesized BiFeO3 compound

International Nuclear Information System (INIS)

Zhai, L.; Shi, Y.G.; Gao, J.L.; Tang, S.L.; Du, Y.W.

2011-01-01

Highlights: → A high-density polycrystalline BiFeO 3 compound was synthesized by high-pressure annealing method. → The sample showed weak ferromagnetic at room temperature, which could be attributed to the lattice distortion induced by the high-pressure annealing. → Irregular domains were observed on the surface of the sample by piezoresponse force microscopy, and a typical hysteresis loop was obtained. - Abstract: High-density polycrystalline BiFeO 3 compound was synthesized by high-pressure annealing. Measurements of crystal structure, magnetic, and ferroelectric properties were made on the sample. It was found that the sample was almost single phase with a distorted R3c structure. The results of the X-ray photoelectron spectra demonstrate that the oxidation state of Fe in the sample is Fe 3+ . The room-temperature field dependence of magnetization for BiFeO 3 exhibits a hysteretic behavior. The observed weak ferromagnetism could be ascribed to the lattice distortion induced by the high-pressure annealing. In addition, the local ferroelectric performance of the sample was studied by piezoresponse force microscopy.

Topological domain walls in helimagnets

Science.gov (United States)

Schoenherr, P.; Müller, J.; Köhler, L.; Rosch, A.; Kanazawa, N.; Tokura, Y.; Garst, M.; Meier, D.

2018-05-01

Domain walls naturally arise whenever a symmetry is spontaneously broken. They interconnect regions with different realizations of the broken symmetry, promoting structure formation from cosmological length scales to the atomic level1,2. In ferroelectric and ferromagnetic materials, domain walls with unique functionalities emerge, holding great promise for nanoelectronics and spintronics applications3-5. These walls are usually of Ising, Bloch or Néel type and separate homogeneously ordered domains. Here we demonstrate that a wide variety of new domain walls occurs in the presence of spatially modulated domain states. Using magnetic force microscopy and micromagnetic simulations, we show three fundamental classes of domain walls to arise in the near-room-temperature helimagnet iron germanium. In contrast to conventional ferroics, the domain walls exhibit a well-defined inner structure, which—analogous to cholesteric liquid crystals—consists of topological disclination and dislocation defects. Similar to the magnetic skyrmions that form in the same material6,7, the domain walls can carry a finite topological charge, permitting an efficient coupling to spin currents and contributions to a topological Hall effect. Our study establishes a new family of magnetic nano-objects with non-trivial topology, opening the door to innovative device concepts based on helimagnetic domain walls.

Two-Dimensional Time-Domain Antenna Arrays for Optimum Steerable Energy Pattern with Low Side Lobes

Directory of Open Access Journals (Sweden)

Alberto Reyna

2014-01-01

Full Text Available This document presents the synthesis of different two-dimensional time-domain antenna arrays for steerable energy patterns with side lobe levels. The research is focused on the uniform and nonuniform distributions of true-time exciting delays and positions of antenna elements. The uniform square array, random array, uniform concentric ring array, and rotated nonuniform concentric ring array geometries are particularly studied. These geometries are synthesized by using the well-known sequential quadratic programming. The synthesis regards the optimal true-time exciting delays and optimal positions of pulsed antenna elements. The results show the capabilities of the different antenna arrays to steer the beam in their energy pattern in time domain and how their performance is in frequency domain after the synthesis in time domain.

Temperature dependence of electronic transport property in ferroelectric polymer films

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

2014-10-15

Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

Conduction at domain walls in oxide multiferroics

Science.gov (United States)

Seidel, J.; Martin, L. W.; He, Q.; Zhan, Q.; Chu, Y.-H.; Rother, A.; Hawkridge, M. E.; Maksymovych, P.; Yu, P.; Gajek, M.; Balke, N.; Kalinin, S. V.; Gemming, S.; Wang, F.; Catalan, G.; Scott, J. F.; Spaldin, N. A.; Orenstein, J.; Ramesh, R.

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Magnetic vortex state and multi-domain pattern in electrodeposited hemispherical nanogranular nickel films

International Nuclear Information System (INIS)

Samardak, Alexander; Sukovatitsina, Ekaterina; Ognev, Alexey; Stebliy, Maksim; Davydenko, Alexander; Chebotkevich, Ludmila; Keun Kim, Young; Nasirpouri, Forough; Janjan, Seyed-Mehdi; Nasirpouri, Farzad

2014-01-01

Magnetic states of nickel nanogranular films were studied in two distinct structures of individual and agglomerated granules electrodeposited on n-type Si(1 1 1) surface from a modified Watts bath at a low pH of 2. Magnetic force microscopy and micromagnetic simulations revealed three-dimensional out-of-plane magnetic vortex states in stand-alone hemispherical granules and their arrays, and multi-domain patterns in large agglomerates and integrated films. Once the granules coalesce into small chains or clusters, the coercivity values increased due to the reduction of inter-granular spacing and strengthening of the magnetostatic interaction. Further growth leads to the formation of a continuous granulated film which strongly affected the coercivity and remanence. This was characterized by the domain wall nucleation and propagation leading to a stripe domain pattern. Magnetoresistance measurements as a function of external magnetic field are indicative of anisotropic magnetoresistance (AMR) for the continuous films electrodeposited on Si substrate. - Highlights: • Magnetic states of electrodeposited nickel in isolated spherical and agglomerated nanogranules, and a continuous film. • Preferential magnetization reversal mechanism in isolated granules is vortex state. • Micromagnetic simulations confirm the three-dimensional vortex. • Transition between the vortex state and multi-domain magnetic pattern causes a significant decrease in the coercive force. • Continuous nickel films electrodeposited on silicon substrate exhibit AMR whose magnitude increases with the film thickness

Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

International Nuclear Information System (INIS)

Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

2016-01-01

The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene Ultrathin Films

Directory of Open Access Journals (Sweden)

Long Li

2017-12-01

Full Text Available The characteristics of ferroelectric capacitors with poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different structures of cell electrodes. It is suggested that the effect of electrode structures could induce changes of performance. Remarkably, cells with line electrodes display a better polarization and fatigue resistance than those with flat electrodes. For P(VDF-TrFE ultrathin films with different electrode structures, the models of charge compensation mechanism for depolarization field and domain fatigue decomposition are used to explain the effect of electrode structure. Furthermore, the driving voltage based on normal speed-functionality is designed, and the testing results show that the line electrode structure could induce a robust switching, which is determined by the free charges concentration in active layer. These findings provide an effective route to design the optimum structure for a ferroelectric capacitor based on P(VDF-TrFE copolymer ultrathin film.

Advantages and Challenges of Relaxor-PbTiO3 Ferroelectric Crystals for Electroacoustic Transducers- A Review

Science.gov (United States)

Zhang, Shujun; Li, Fei; Jiang, Xiaoning; Kim, Jinwook; Luo, Jun; Geng, Xuecang

2014-01-01

Relaxor-PbTiO3 (PT) based ferroelectric crystals with the perovskite structure have been investigated over the last few decades due to their ultrahigh piezoelectric coefficients (d33 > 1500 pC/N) and electromechanical coupling factors (k33 > 90%), far outperforming state-of-the-art ferroelectric polycrystalline Pb(Zr,Ti)O3 ceramics, and are at the forefront of advanced electroacoustic applications. In this review, the performance merits of relaxor-PT crystals in various electroacoustic devices are presented from a piezoelectric material viewpoint. Opportunities come from not only the ultrahigh properties, specifically coupling and piezoelectric coefficients, but through novel vibration modes and crystallographic/domain engineering. Figure of merits (FOMs) of crystals with various compositions and phases were established for various applications, including medical ultrasonic transducers, underwater transducers, acoustic sensors and tweezers. For each device application, recent developments in relaxor-PT ferroelectric crystals were surveyed and compared with state-of-the-art polycrystalline piezoelectrics, with an emphasis on their strong anisotropic features and crystallographic uniqueness, including engineered domain - property relationships. This review starts with an introduction on electroacoustic transducers and the history of piezoelectric materials. The development of the high performance relaxor-PT single crystals, with a focus on their uniqueness in transducer applications, is then discussed. In the third part, various FOMs of piezoelectric materials for a wide range of ultrasound applications, including diagnostic ultrasound, therapeutic ultrasound, underwater acoustic and passive sensors, tactile sensors and acoustic tweezers, are evaluated to provide a thorough understanding of the materials’ behavior under operational conditions. Structure-property-performance relationships are then established. Finally, the impacts and challenges of relaxor

Hybrid dual gate ferroelectric memory for multilevel information storage

KAUST Repository

Khan, Yasser

2015-01-01

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

Encoding, training and retrieval in ferroelectric tunnel junctions

Science.gov (United States)

Xu, Hanni; Xia, Yidong; Xu, Bo; Yin, Jiang; Yuan, Guoliang; Liu, Zhiguo

2016-05-01

Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, training, memory solidification and retrieval constitute a whole chain that is inseparable. However, it is yet envisioned but experimentally unconfirmed. The poor retention or short-term store of tunneling electroresistance, in particular the intermediate states, is still a key challenge in FTJs. Here we report the encoding, training and retrieval in BaTiO3 FTJs, emulating the key features of information processing in terms of cognitive neuroscience. This is implemented and exemplified through processing characters. Using training inputs that are validated by the evolution of both barrier profile and domain configuration, accurate recalling of encoded characters in the retrieval stage is demonstrated.

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

Science.gov (United States)

Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

2014-11-17

Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

Energy Technology Data Exchange (ETDEWEB)

Moghadam, Reza M. [Department; Xiao, Zhiyong [Department; Ahmadi-Majlan, Kamyar [Department; Grimley, Everett D. [Department; Bowden, Mark [Environmental; amp, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ong, Phuong-Vu [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chambers, Scott A. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Lebeau, James M. [Department; Hong, Xia [Department; Sushko, Peter V. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ngai, Joseph H. [Department

2017-09-13

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

Continuum damage model for ferroelectric materials and its application to multilayer actuators

Science.gov (United States)

Gellmann, Roman; Ricoeur, Andreas

2016-05-01

In this paper a micromechanical continuum damage model for ferroelectric materials is presented. As a constitutive law it is implemented into a finite element (FE) code. The model is based on micromechanical considerations of domain switching and its interaction with microcrack growth and coalescence. A FE analysis of a multilayer actuator is performed, showing the initiation of damage zones at the electrode tips during the poling process. Further, the influence of mechanical pre-stressing on damage evolution and actuating properties is investigated. The results provided in this work give useful information on the damage of advanced piezoelectric devices and their optimization.

Why is the electrocaloric effect so small in ferroelectrics?

Directory of Open Access Journals (Sweden)

G. G. Guzmán-Verri

2016-06-01

Full Text Available Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

A prediction of rate-dependent behaviour in ferroelectric polycrystals

International Nuclear Information System (INIS)

Kim, Sang-Joo

2007-01-01

Rate-dependent behaviour of a polycrystalline ferroelectric material is predicted based on thermal activation theory and a representative volume element model. First, the behaviour of a ferroelectric single crystal is calculated from a recently proposed three-dimensional free energy model [S.J. Kim, S. Seelecke, Int. J. Solids Struct. 44 (2007) 1196-1209]. Then, from the calculated single crystal responses, poling behaviour of a ferroelectric polycrystal is obtained in three different ways, two representative volume element models and Gaussian integration method. It is found that a dodecahedron representative volume element consisting of 210 crystallites is the best choice among the three methods. Finally, the behaviour of a ferroelectric polycrystal under various electric and stress loads is calculated using the chosen RVE model. The calculated responses are compared qualitatively with experimental observations, and the effects of crystal orientation and polycrystallinity are discussed

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

2013-01-01

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

Structural, dielectric and ferroelectric characterization of PZT thin films

Directory of Open Access Journals (Sweden)

Araújo E.B.

1999-01-01

Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

Science.gov (United States)

Kim, Do-Kyung; Lee, Gyu-Jeong; Lee, Jae-Hyun; Kim, Min-Hoi; Bae, Jin-Hyuk

2018-05-01

We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.

High-performance solution-processed polymer ferroelectric field-effect transistors

NARCIS (Netherlands)

Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

Ferroelectric tunneling element and memory applications which utilize the tunneling element

Science.gov (United States)

Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

2010-07-20

A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

Guest–host interaction in ferroelectric liquid crystal–nanoparticle

Indian Academy of Sciences (India)

Ferroelectric Cu-doped ZnO (Cu–ZnO) nanoparticles have been added to the pure ferroelectric liquid crystal (FLC) Felix 17/100. The nanoparticles are bigger in size as compared to FLC molecules; therefore, they distort the existing geometry of FLC matrix and set up an antiparallel correlation with the dipole moments of the ...

Magnetic and ferroelectric properties of Fe doped SrTiO{sub 3-{delta}} films

Energy Technology Data Exchange (ETDEWEB)

Kumar, A Sendil; Suresh, P; Srinath, S [School of Physics, University of Hyderabad, Hyderabad, 500 046 (India); Kumar, M Mahesh; Post, M L [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, ON, K1A 0R6 (Canada); Srikanth, H [Materials Physics Laboratory, Department of Physics, University of South Florida, Tampa, Florida, 33620 (United States); Sahner, Kathy; Moos, Ralf, E-mail: sssp@uohyd.ernet.i [Functional Materials, University of Bayreuth, 95447, Bayreuth (Germany)

2010-01-01

Recent interest in SrTiO{sub 3} stems from its wide applicability in microwave devices based on the tunable characteristics of dielectric constant in the microwave frequency range. It is obvious that for any such application, SrTiO{sub 3} should have a ferroelectric Curie temperature (T{sub C}) close to room temperature or higher. By inducing strains by chemical substitutions, it was possible to obtain T{sub C} as high as 200{sup 0}C in SrTiO{sub 3} modified with Fe{sup 4+}. Hysteresis loops obtained confirms the presence of ferroelectric domains. Two apparent transitions, one at {approx}200 {sup 0}C and another {approx}300 {sup 0}C were seen in {epsilon}', which are replicated as sharp drops in resistivity curves. These temperatures far exceed the T{sub C}s reported in the literature till now and could open new avenues for innumerable other applications for SrTiO{sub 3}. The magnetic properties of Fe doped SrTiO{sub 3} are also investigated. Low doping of Fe exhibits simple antiferromagnetic behaviour.

All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

KAUST Repository

Khan, Yasser

2012-11-21

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Concurrent transition of ferroelectric and magnetic ordering near room temperature.

Science.gov (United States)

Ko, Kyung-Tae; Jung, Min Hwa; He, Qing; Lee, Jin Hong; Woo, Chang Su; Chu, Kanghyun; Seidel, Jan; Jeon, Byung-Gu; Oh, Yoon Seok; Kim, Kee Hoon; Liang, Wen-I; Chen, Hsiang-Jung; Chu, Ying-Hao; Jeong, Yoon Hee; Ramesh, Ramamoorthy; Park, Jae-Hoon; Yang, Chan-Ho

2011-11-29

Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

On bistable states retention in ferroelectric Langmuir-Blodgett films

Science.gov (United States)

Geivandov, A. R.; Palto, S. P.; Yudin, S. G.; Fridkin, V. M.; Blinov, L. M.; Ducharme, S.

2003-08-01

A new insight into the nature of ferroelectricity is emerging from the study of ultra-thin ferroelectric films prepared of poly(vinylidene fluoride with trifluoroethylene) copolymer using Langmuir-Blodgett (LB) technique. Unique properties of these films indicate the existence of two-dimensional ferroelectricity. The retention of two polarized states in ferroelectric polymer LB films is studied using nonlinear dielectric spectroscopy. The technique is based on phase sensitive measurements of nonlinear dielectric spectroscopy. The amplitude of the current response at the 2nd harmonic of the applied voltage is proportional to the magnitude of the remnant polarization, while its phase gives the sign. We have found that 10 - 20 mm thick LB films can show fast switching time and long retention of the two polarized states. Nevertheless, LB films show a pronounced asymmetry in switching to the opposite states. Possible mechanisms of such behavior are discussed.

Switching Characteristics of Ferroelectric Transistor Inverters

Science.gov (United States)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

High-accuracy determination for optical indicatrix rotation in ferroelectric DTGS

OpenAIRE

O.S.Kushnir; O.A.Bevz; O.G.Vlokh

2000-01-01

Optical indicatrix rotation in deuterated ferroelectric triglycine sulphate is studied with the high-accuracy null-polarimetric technique. The behaviour of the effect in ferroelectric phase is referred to quadratic spontaneous electrooptics.

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

Science.gov (United States)

Young, T.; Sharma, P.; Kim, D. H.; Ha, Thai Duy; Juang, Jenh-Yih; Chu, Y.-H.; Seidel, J.; Nagarajan, V.; Yasui, S.; Itoh, M.; Sando, D.

2018-02-01

We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ˜50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

2012-01-01

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, M.; Asadi, K. (Kamal); Blom, P.W.M.; Leeuw, de D.M.

2012-01-01

The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

Ferroelectric properties of tungsten bronze morphotropic phase boundary systems

International Nuclear Information System (INIS)

Oliver, J.R.; Neurgaonkar, R.R.; Cross, L.E.; Pennsylvania State Univ., University Park, PA

1989-01-01

Tungsten bronze ferroelectrics which have a morphotropic phase boundary (MPB) can have a number or enhanced dielectric, piezoelectric, and electrooptic properties compared to more conventional ferroelectric materials. The structural and ferroelectric properties of several MPB bronze systems are presented, including data from sintered and hot-pressed ceramics, epitaxial thin films, and bulk single crystals. Included among these are three systems which had not been previously identified as morphotropic. The potential advantages and limitations of these MPB systems are discussed, along with considerations of the appropriate growth methods for their possible utilization in optical, piezoelectric, or pyroelectric device applications

Model of two-dimensional electron gas formation at ferroelectric interfaces

Energy Technology Data Exchange (ETDEWEB)

Aguado-Puente, P.; Bristowe, N. C.; Yin, B.; Shirasawa, R.; Ghosez, Philippe; Littlewood, P. B.; Artacho, Emilio

2015-07-01

The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here, we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms, a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first-principles simulations of free-standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a nonvolatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

Giant enhancement in the ferroelectric field effect using a polarization gradient

Energy Technology Data Exchange (ETDEWEB)

Gu, Zongquan [Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Islam, Mohammad A. [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Physics, State University of New York at Oswego, Oswego, New York 13126 (United States); Spanier, Jonathan E., E-mail: spanier@drexel.edu [Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

2015-10-19

Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO{sub 3} (LAO)-SrTiO{sub 3} (STO) interface. However, strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Here, through application of phenomenological Landau-Ginzburg-Devonshire theory and self-consistent Poisson-Schrödinger model calculations, we show how compositional grading of PbZr{sub 1−x}Ti{sub x}O{sub 3} ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable breakthrough performance of ferroelectric non-volatile memories.

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Science.gov (United States)

Heidler, Jonas; Yang, Sheng; Feng, Xinliang; Müllen, Klaus; Asadi, Kamal

2018-06-01

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

High-Tc ferroelectrics and superconductors

International Nuclear Information System (INIS)

Muller, K.A.

1990-01-01

The meaning of the title refers to transition temperatures T c in ferroelectrics (FE) and superconductors (S). The highest T c 's in either field are observed in oxides: 1770 K in the ferroelectric La 2 TiO 7 and 125 K in the superconductor Tl 2 Ca 2 Cu 3 O 10 . Therefore, the question can be asked whether the observed high T c 's in oxide FE and S are a pure coincidence or whether there may be an underlying reason for it. This question is addressed first by recalling recent advances concerning anharmonic FE-properties and then by reviewing S-findings in the new compounds related to these properties

Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

Science.gov (United States)

Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

2017-07-01

In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Directory of Open Access Journals (Sweden)

S. Riedel

2016-09-01

Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

Ferroelectricity and Piezoelectricity in Free-Standing Polycrystalline Films of Plastic Crystals.

Science.gov (United States)

Harada, Jun; Yoneyama, Naho; Yokokura, Seiya; Takahashi, Yukihiro; Miura, Atsushi; Kitamura, Noboru; Inabe, Tamotsu

2018-01-10

Plastic crystals represent a unique compound class that is often encountered in molecules with globular structures. The highly symmetric cubic crystal structure of plastic crystals endows these materials with multiaxial ferroelectricity that allows a three-dimensional realignment of the polarization axes of the crystals, which cannot be achieved using conventional molecular ferroelectric crystals with low crystal symmetry. In this work, we focused our attention on malleability as another characteristic feature of plastic crystals. We have synthesized the new plastic/ferroelectric ionic crystals tetramethylammonium tetrachloroferrate(III) and tetramethylammonium bromotrichloroferrate(III), and discovered that free-standing translucent films can be easily prepared by pressing powdered samples of these compounds. The thus obtained polycrystalline films exhibit ferroelectric polarization switching and a relatively large piezoelectric response at room temperature. The ready availability of functional films demonstrates the practical utility of such plastic/ferroelectric crystals, and considering the vast variety of possible constituent cations and anions, a wide range of applications should be expected for these unique and attractive functional materials.

Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

International Nuclear Information System (INIS)

Fang, Huajing; Yan, Qingfeng; Geng, Chong; Li, Qiang; Chan, Ngai Yui; Au, Kit; Ng, Sheung Mei; Leung, Chi Wah; Wa Chan, Helen Lai; Dai, Jiyan; Yao, Jianjun; Guo, Dong

2016-01-01

Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride–trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ∼62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality

Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

Energy Technology Data Exchange (ETDEWEB)

Fang, Huajing [Department of Applied Physics, The Hong Kong Polytechnic University (PolyU) Hunghom, Kowloon (Hong Kong); Department of Chemistry, Tsinghua University, Beijing 100084 (China); Yan, Qingfeng, E-mail: yanqf@mail.tsinghua.edu.cn, E-mail: jiyan.dai@polyu.edu.hk; Geng, Chong; Li, Qiang [Department of Chemistry, Tsinghua University, Beijing 100084 (China); Chan, Ngai Yui; Au, Kit; Ng, Sheung Mei; Leung, Chi Wah; Wa Chan, Helen Lai; Dai, Jiyan, E-mail: yanqf@mail.tsinghua.edu.cn, E-mail: jiyan.dai@polyu.edu.hk [Department of Applied Physics, The Hong Kong Polytechnic University (PolyU) Hunghom, Kowloon (Hong Kong); Yao, Jianjun [Asylum Research, Oxford Instruments, Shanghai 200233 (China); Guo, Dong [Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China)

2016-01-07

Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride–trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ∼62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality.

Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

Science.gov (United States)

Fang, Huajing; Yan, Qingfeng; Geng, Chong; Chan, Ngai Yui; Au, Kit; Yao, Jianjun; Ng, Sheung Mei; Leung, Chi Wah; Li, Qiang; Guo, Dong; Wa Chan, Helen Lai; Dai, Jiyan

2016-01-01

Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ˜62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality.

The lineshape of inelastic neutron scattering in the relaxor ferroelectrics

International Nuclear Information System (INIS)

Ivanov, M.A.; Kozlovski, M.; Piesiewicz, T.; Stephanovich, V.A.; Weron, A.; Wymyslowski, A.

2005-01-01

The possibilities of theoretical and experimental investigations of relaxor ferroelectrics by inelastic neutron scattering method are considered. The simple model to description of the peculiarities of inelastic neutron scattering lineshapes in ferroelectric relaxors is suggested. The essence of this model is to consider the interaction of the phonon subsystem of relaxor ferroelectrics with the ensemble of defects and impurities. The modification of the Latin Hypercube Sampling (LHS) method is presented. The optimization of planning of experiment by the modified LHS method is considered [ru

Reversible spin texture in ferroelectric Hf O2

Science.gov (United States)

Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

2017-06-01

Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

Ferroelectric Cathodes in Transverse Magnetic Fields

International Nuclear Information System (INIS)

Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

2002-01-01

Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

Energy Technology Data Exchange (ETDEWEB)

Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

2016-10-07

Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

International Nuclear Information System (INIS)

Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

2016-01-01

Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

Theoretical model for thin ferroelectric films and the multilayer structures based on them

Energy Technology Data Exchange (ETDEWEB)

Starkov, A. S., E-mail: starkov@iue.tuwien.ac.at; Pakhomov, O. V. [St. Petersburg National Research Univeristy ITMO, Institute of Refrigeration and Biotechnologies (Russian Federation); Starkov, I. A. [Vienna University of Technology, Institute for Microelectronics (Austria)

2013-06-15

A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

Theoretical model for thin ferroelectric films and the multilayer structures based on them

International Nuclear Information System (INIS)

Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

2013-01-01

A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data

Theoretical model for thin ferroelectric films and the multilayer structures based on them

Science.gov (United States)

Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

2013-06-01

A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

Science.gov (United States)

Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.; Chshiev, M.; Manchon, Aurelien

2015-01-01

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.

2015-02-11

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Fast Ferroelectric L-band Tuner

International Nuclear Information System (INIS)

Kazakov, S. Yu.; Yakovlev, V. P.; Hirshfield, J. L.; Kanareykin, A. D.; Nenasheva, E. A.

2006-01-01

Description is given of a preliminary conceptual design for a tuner that employs a new ferroelectric ceramic that allows fast changes in coupling between the SRF acceleration structure of a linac and the external RF feeding line. The switching time of this device is in the range of a few microseconds. Utilization of this tuner is predicted to decrease Ohmic losses in the acceleration structure and thereby to reduce the power consumption of the linac. Using parameters of the TESLA-800 collider as an example, it is shown that it may be possible to reduce the ac mains power consumption by 12 MW, or about by 10%. The design of the tuner that is described allows reduced pulsed and average heating of the ferroelectric ceramics

Investigation of the switching characteristics in ferroelectrics by first-order reversal curve diagrams

International Nuclear Information System (INIS)

Stancu, Alexandru; Mitoseriu, Liliana; Stoleriu, Laurentiu; Piazza, Daniele; Galassi, Carmen; Ricinschi, Dan; Okuyama, Masanori

2006-01-01

First-order reversal curves (FORC) diagrams are proposed for describing the switching properties in ferroelectric materials. The method is applied for Pb(Zr,Ti)O 3 (PZT) ferroelectric ceramics and films with different P(E) hysteresis and microstructural characteristics. The separation of the reversible and irreversible contributions to the ferroelectric polarization is explained in terms of microstructural characteristics of the investigated samples. The influence of parameters as field frequency, crystallite orientation, ferroelectric fatigue and porosity degree on the FORC diagrams is discussed

Thick-film processing of Pb5Ge3O11-based ferroelectric glass-ceramics

International Nuclear Information System (INIS)

Cornejo, I.A.; Haun, M.J.

1996-01-01

Processing techniques were investigated to produce c-axis orientation, or texture, of ferroelectric Pb 5 Ge 3 O 11 -based glass-ceramic compositions during crystallization of amorphous thick-film printed samples from the Pb 5 Ge 3 O 11 -PbTiO 3 (PG-PT) and Pb 5 Ge 3 O 11 -Pb(Zr 1/2 Ti 1/2 )O 3 (PG-PZT) systems. In these systems the PG crystallized into a ferroelectric phase, producing a multiple ferroelectric phase composite at low temperatures, PG-PT or PG-PZT. In this way the non-ferroelectric component of traditional ferroelectric glass-ceramics was eliminated

A new method to study ferroelectrics using the remanent Henkel plots

Science.gov (United States)

Vopson, Melvin M.

2018-05-01

Analysis of experimental curves constructed from dc demagnetization and isothermal remanent magnetization known as Henkel and delta M plots, have served for over 53 years as an important tool for characterization of interactions in ferromagnets. In this article we address the question whether the same experimental technique could be applied to the study of ferroelectric systems. The successful measurement of the equivalent dc depolarisation and isothermal remanent polarization curves and the construction of the Henkel and delta P plots for ferroelectrics is reported here. Full measurement protocol is provided together with experimental examples for two ferroelectric ceramic samples. This new measurement technique is an invaluable experimental tool that could be used to further advance our understanding of ferroelectric materials and their applications.

Ferroelastic domain walls in barium titanate - quantitative phenomenological model

Czech Academy of Sciences Publication Activity Database

Hlinka, Jiří; Márton, Pavel

2009-01-01

Roč. 101, č. 1 (2009), s. 50-62 ISSN 1058-4587 R&D Projects: GA ČR GA202/06/0411; GA ČR(CZ) GD202/05/H003; GA AV ČR 1ET300100401 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferroelectric and ferroelastic domains * BaTiO 3 * Ginzburg-Landau theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.329, year: 2009

Four-state ferroelectric spin-valve

Czech Academy of Sciences Publication Activity Database

Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

2015-01-01

Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

A qualitative test for intrinsic size effect on ferroelectric phase transitions

OpenAIRE

Wang, Jin; Tagantsev, Alexander K.; Setter, Nava

2010-01-01

The size effect in ferroelectrics is treated as a competition between the geometrical symmetry of the ferroelectric sample and its crystalline symmetry. The manifestation of this competition is shown to be polarization rotation, which is driven by temperature and/or size variations, thus providing a qualitative indication of intrinsic finite size effect on ferroelectrics. The concept is demonstrated in a simple case of PbTiO3 nanowires having their axis parallel to [111]C direction, where the...

Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

KAUST Repository

Hu, Weijin

2014-11-12

We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

Energy Technology Data Exchange (ETDEWEB)

Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2015-01-12

Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

Strain tunable ferroelectric and dielectric properties of BaZrO3

International Nuclear Information System (INIS)

Zhang, Yajun; Liu, Man; Shimada, Takahiro; Kitamura, Takayuki; Wang, Jie

2014-01-01

The crucial role of epitaxial (in-plane) strain on the structural, electronic, energetic, ferroelectric, and dielectric properties of BaZrO 3 (BZO) is investigated using density-functional theory calculations. We demonstrate that the BZO crystal subjected to a critical compressive (or tensile) strain exhibits non-trivial spontaneous polarization that is higher than that of well-known ferroelectrics BaTiO 3 , while the BZO crystal is essentially paraelectric in the absence of strain. The electronic structure and Born-effective-charge analyses elucidate that the strain-induced paraelectric-to-ferroelectric transition is driven by the orbital hybridization of d-p electrons between zirconium and oxygen. Through the strain-induced paraelectric-to-ferroelectric phase transition, the dielectric response of BZO is significantly enhanced by the in-plane strain. The tensile strain increases the in-plane dielectric constant by a factor of seven with respect to that without the strain, while the compression tends to enhance the out-of-plane dielectric response. Therefore, strain engineering makes BZO an important electromechanical material due to the diversity in ferroelectric and dielectric properties.

Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

Institute of Scientific and Technical Information of China (English)

Young; Tea; Chun; Daping; Chu

2015-01-01

Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

R-curve behaviour of ferroelectric ceramics

International Nuclear Information System (INIS)

Egorov, N.Ya.; Kramarov, S.O.

2004-01-01

The attempt's made to identify and evaluate the regularities of developing the fractures in the ferroelectric ceramics and also-study the effect of the polishing operation on the strength characteristics of the piezoceramics. The R-curve behaviour in the ferroelectric ceramics is studied on the samples of the barium titanate and lead zirconate-titanate by the four-point bending with controlled surface fractures. It is established that increasing curve of resistance to the fracture growth is observed in the piezoceramics under the conditions of the fracture stable growth. The results obtained on the polished samples prove that the mechanical processing introduces the compression surface stresses into the piezoceramic materials [ru

Ferroelastic phase in SrBi.sub.2./sub.Ta.sub.2./sub.O.sub.9./sub. and study of the ferroelectric phase-transition dynamicy

Czech Academy of Sciences Publication Activity Database

Kamba, Stanislav; Pokorný, Jan; Porokhonskyy, Viktor; Petzelt, Jan; Moret, M. P.; Garg, A.; Barber, Z. H.; Zallen, R.

2002-01-01

Roč. 81, č. 6 (2002), s. 1056-1058 ISSN 0003-6951 R&D Projects: GA ČR GA202/01/0612; GA AV ČR IAA1010213 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectrics * ferroelastics * domains * soft mode Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.207, year: 2002

Enhancement of fatigue endurance in ferroelectric PZT ceramic by the addition of bismuth layered SBT

Science.gov (United States)

Namsar, O.; Pojprapai, S.; Watcharapasorn, A.; Jiansirisomboon, S.

2014-10-01

Electrical fatigue properties of (1-x)PZT-xSBT ceramics (x = 0-1.0 weight fraction) were characterized. It was found that pure PZT ceramic had severe polarization fatigue. This was mainly attributed to an occurrence of the macroscopic cracks at near-electrode regions. On the contrary, pure SBT ceramic exhibited excellent fatigue resistance, which was attributed primarily to weak domain wall pinning. As small amount of SBT (0.1 ≤ x ≤ 0.3) was added into PZT, a small reduction of remanent polarization after fatigue process was observed. This demonstrated that these ceramics had high stability during the repeated domain switching due to their low oxygen vacancy concentration. Therefore, these results suggested that this new ceramic PZT-SBT system seemed to be an alternative material for replacing pure PZT in ferroelectric memory applications.

Transmission electron and optical microscopy of the domain structure of Ni3B7O13Br ferroic boracite

International Nuclear Information System (INIS)

Castellanos-Guzman, A.G.; Trujillo-Torrez, M.; Czank, M.

2005-01-01

The study investigated the domain structure of nickel bromine boracite single crystals, by means of polarised-light in conjunction with transmission electron microscopy. Single crystals of Ni 3 B 7 O 13 Br were grown by chemical transport reactions in closed quartz ampoules, in the temperature range of 1130 K and were examined by polarising optical microscopy (PLM), and transmission electron microscopy (TEM). PLM was also used in order to study the behaviour of birefringence as a function of temperature. For TEM the single crystals were crushed and mounted on holey carbon films. Comparative electron microscope images were useful for revealing the domain structure of this fully ferroelectric/fully ferroelastic material previously observed between the crossed polars of an optical microscope. X-ray diffraction analysis of the crystal under study was performed at room temperature

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

Directory of Open Access Journals (Sweden)

Aditya Chauhan

2015-11-01

Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

Fast Ferroelectric L-Band Tuner for Superconducting Cavities

Energy Technology Data Exchange (ETDEWEB)

Jay L. Hirshfield

2011-03-01

Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

Fast Ferroelectric L-Band Tuner for Superconducting Cavities

International Nuclear Information System (INIS)

Hirshfield, Jay L.

2011-01-01

Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O_3 Thin Films

International Nuclear Information System (INIS)

Jun Jiang; An-Quan Jiang

2016-01-01

The traditional imprint characterization of ferroelectric thin films estimates imprint time dependence of the mean coercive voltage of all domains from a polarization-voltage hysteresis loop, which shows a semilogarithmic time dependence above an initial imprint time of τ_0 > 1 μs at room temperature. Below τ_0, the imprint effect is believed to be weak. In consideration of region-by-region domain reversal under a rising pulsed voltage with ordered coercive voltages increasing from zero up to the maximum applied voltage during capacitor charging time, we can estimate the imprinted coercive voltage of each domain from domain switching current transient separately with imprint time as short as 20 ns. In disagreement with the previous observations, all imprinted coercive voltages for the domains in Pt/Pb(Zr_0_._4Ti_0_._6)O_3/Pt thin-film capacitors show step-like increases at two characteristic times of 300 ns and 0.27s. The imprint effect is surprisingly strong enough even at shortened time down to 20 ns without any evidence of weakening. (paper)

Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

2008-01-01

Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

Electrical transport through Pb(Zr,Ti)O3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface: Ferroelectric p-n diode

Science.gov (United States)

Watanabe, Yukio

1999-05-01

Current through (Pb,La)(Zr,Ti)O3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally determined by the carrier conduction-type semiconductors. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged traps. This interpretation is consistent with a large relaxation current observed at a low voltage. On the other hand, a reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in metal/(Pb,La)(Zr,Ti)O3/SrTiO3:Nb but not in metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 and is attributed to a possible band bending due to the spontaneous polarization (P) switching. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a p-n or a p-p junction at the ferroelectric semiconductor interface (p: hole conduction type, n: electron conduction type). The analysis suggests that an intrinsically inhomogeneous P (∇P) near the ferroelectric/metal interface is likely very weak or existing in a very thin layer, when a reaction of the metal with the ferroelectric is eliminated. Additionally, the various aspects of transport through ferroelectrics are explained as a transport in the carrier depleted region.

Composition driven structural instability in perovskite ferroelectrics

Directory of Open Access Journals (Sweden)

Chao Xu

2017-04-01

Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

Quantum fluctuations in insulating ferroelectrics

International Nuclear Information System (INIS)

Riseborough, Peter S.

2010-01-01

Graphical abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility. - Abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero-point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility.

Characterization of the effective electrostriction coefficients in ferroelectric thin films

Science.gov (United States)

Kholkin, A. L.; Akdogan, E. K.; Safari, A.; Chauvy, P.-F.; Setter, N.

2001-06-01

Electromechanical properties of a number of ferroelectric films including PbZrxTi1-xO3(PZT), 0.9PbMg1/3Nb2/3O3-0.1PbTiO3(PMN-PT), and SrBi2Ta2O9(SBT) are investigated using laser interferometry combined with conventional dielectric measurements. Effective electrostriction coefficients of the films, Qeff, are determined using a linearized electrostriction equation that couples longitudinal piezoelectric coefficient, d33, with the polarization and dielectric constant. It is shown that, in PZT films, electrostriction coefficients slightly increase with applied electric field, reflecting the weak contribution of non-180° domains to piezoelectric properties. In contrast, in PMN-PT and SBT films electrostriction coefficients are field independent, indicating the intrinsic nature of the piezoelectric response. The experimental values of Qeff are significantly smaller than those of corresponding bulk materials due to substrate clamping and possible size effects. Electrostriction coefficients of PZT layers are shown to depend strongly on the composition and preferred orientation of the grains. In particular, Qeff of (100) textured rhombohedral films (x=0.7) is significantly greater than that of (111) layers. Thus large anisotropy of the electrostrictive coefficients is responsible for recently observed large piezoelectric coefficients of (100) textured PZT films. Effective electrostriction coefficients obtained by laser interferometry allow evaluation of the electromechanical properties of ferroelectric films based solely on the dielectric parameters and thus are very useful in the design and fabrication of microsensors and microactuators.

Ferroelectric properties of BaTiO3/PbZr0.2Ti.08O3 bilayer thin film

Science.gov (United States)

Salev, Pavel; Yang, Chun; Grigoriev, Alexei

2014-03-01

The thin film ferroelectric BaTiO3/PbZr0.2Ti0.8O3 bilayer was epitaxially grown on SrRuO3/SrTiO3 substrate by RF sputtering. Electrical measurements of polarization switching revealed two different switching regimes - a small ferroelectric hysteresis loop at low applied voltage and a larger loop at a high voltage. The measured dielectric permittivity corresponds to weak electrostatic coupling between two layers according to Landau-Ginsburg-Devonshire theory. This weak coupling may allow for independent polarization states to exist in individual layers. This can lead to stable head-to-head and tail-to-tail polarization domain configurations, which would explain the two switching regimes observed in electrical measurements. The compensation of polarization gradient across the interface can be explained by the enhancement of interface charge carrier density due to strong bending of electron energy bands. This work was supported by NSF award DMR-1057159.

Identification of inversion domains in KTiOPO{sub 4}via resonant X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Fabrizi, Federica, E-mail: federica.fabrizi@diamond.ac.uk [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE (United Kingdom); Thomas, Pamela A. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Nisbet, Gareth; Collins, Stephen P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE (United Kingdom)

2015-05-14

The identification and high-resolution mapping of the absolute crystallographic structure in multi-domain ferroelectric KTiOPO{sub 4} is achieved through a novel synchrotron X-ray diffraction method. On a single Bragg reflection, the intensity ratio in resonant diffraction below and above the Ti absorption K edge demonstrates a domain contrast up to a factor of ∼270, thus implementing a non-contact, non-destructive imaging technique with micrometre spatial resolution, applicable to samples of arbitrarily large dimensions. A novel method is presented for the identification of the absolute crystallographic structure in multi-domain polar materials such as ferroelectric KTiOPO{sub 4}. Resonant (or ‘anomalous’) X-ray diffraction spectra collected across the absorption K edge of Ti (4.966 keV) on a single Bragg reflection demonstrate a huge intensity ratio above and below the edge, providing a polar domain contrast of ∼270. This allows one to map the spatial domain distribution in a periodically inverted sample, with a resolution of ∼1 µm achieved with a microfocused beam. This non-contact, non-destructive technique is well suited for samples of large dimensions (in contrast with traditional resonant X-ray methods based on diffraction from Friedel pairs), and its potential is particularly relevant in the context of physical phenomena connected with an absence of inversion symmetry, which require characterization of the underlying absolute atomic structure (such as in the case of magnetoelectric coupling and multiferroics)

Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions

International Nuclear Information System (INIS)

Zou Ya-Yi; Zhou Yan; Chew Khian-Hooi

2013-01-01

We investigate the dynamic characteristics of electric polarization P(t) in a ferroelectric junction under ac applied voltage and stress, and calculate the frequency response and the cut-off frequency f 0 , which provides a reference for the upper limit of the working frequency. Our study might be significant for sensor and memory applications of nanodevices based on ferroelectric junctions

"Negative capacitance" in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

Science.gov (United States)

Saha, Atanu K.; Datta, Suman; Gupta, Sumeet K.

2018-03-01

In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of "S" shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the "S"-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to "S"-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

Differential geometric aspects of the theory of ferroelectricity

International Nuclear Information System (INIS)

Khosiainov, V.T.

1988-11-01

In connection with the problem of the ferroelectricity a differential formalism is developed as a tool to describe the fine electronic properties in solids. This includes the gauge invariant definition of the differentiation in k-space (position operator), the notion of holonomy group and characteristic gauge field in k-space of electron states. A variational principle and possible solutions of resulting field equations are discussed. A criterion for the appearance of the ferroelectricity is proposed. (author). 5 refs

Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

Energy Technology Data Exchange (ETDEWEB)

Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S G; Lazarev, V V; Yablonskii, S V; Palto, S P [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

2012-05-15

The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

Electrically tunable spatially variable switching in ferroelectric liquid crystal/water system

Science.gov (United States)

Choudhary, A.; Coondoo, I.; Prakash, J.; Sreenivas, K.; Biradar, A. M.

2009-04-01

An unusual switching phenomenon in the region outside conducting patterned area in ferroelectric liquid crystal (FLC) containing about 1-2 wt % of water has been observed. The presence of water in the studied heterogeneous system was confirmed by Fourier transform infrared spectroscopy. The observed optical studies have been emphasized on the "spatially variable switching" phenomenon of the molecules in the nonconducting region of the cell. The observed phenomenon is due to diffusion of water between the smectic layers of the FLC and the interaction of the curved electric field lines with the FLC molecules in the nonconducting region.

Ferroelectric behavior of a lead titanate nanosphere due to depolarization fields and mechanical stresses

Energy Technology Data Exchange (ETDEWEB)

Andrade Landeta, J.; Lascano, I.

2017-07-01

A theorical model has been developed based on the theory of Ginzburg-Landau-Devonshire to study and predict the effects the decreasing of size particle in a nanosphere of PbTiO3 subjected to the action of depolarization fields and mechanical stress. It was considered that the nanosphere is surrounded by a layer of space charges on its surface, and containing 180° domains generated by minimizing free energy of depolarization. Energy density of depolarization, wall domain and electro-elastic energy have been incorporated into the free energy of the theory Ginzburg-Landau-Devonshire. Free energy minimization was performed to determine the spontaneous polarization and transition temperature system. These results show that the transition temperature for nanosphere is substantially smaller than the corresponding bulk material. Also, it has been obtained that the stability of the ferroelectric phase of nanosphere is favored for configurations with a large number of 180° domains, with the decreasing of thickness space charge layer, and the application of tensile stress and decreases with compressive stress. (Author)

Effects of Bi doping on dielectric and ferroelectric properties

Indian Academy of Sciences (India)

[Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50(Ti0.80Sn0.20O3 Thin Films Prepared Using Chemical Solution Deposition

Directory of Open Access Journals (Sweden)

Venkata Sreenivas Puli

2015-01-01

Full Text Available Nanoscale switchable ferroelectric (Ba0.50Sr0.50(Ti0.80Sn0.20O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM technique has been employed to acquire out-of-plane (OPP piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

Surface Acoustic Waves in ferroelectrics

Czech Academy of Sciences Publication Activity Database

Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

2004-01-01

Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

Theoretical study on phase coexistence in ferroelectric solid solutions near the tricritical point

Energy Technology Data Exchange (ETDEWEB)

Lu, Xiaoyan, E-mail: luxy@hit.edu.cn, E-mail: dzk@psu.edu; Li, Hui [Key Lab of Structures Dynamic Behavior and Control of the Ministry of Education, School of Civil Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zheng, Limei [Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150001 (China); Cao, Wenwu [Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150001 (China); Department of Mathematics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2015-04-07

Phase coexistence in ferroelectric solid solutions near the tricritical point has been theoretically analyzed by using the Landau-Devonshire theory. Results revealed that different phases having similar potential wells could coexist in a narrow composition range near the tricritical point in the classical Pb(Zr{sub 1−x}Ti{sub x})O{sub 3} system. The potential barrier between potential wells increases with the decrease of temperature. Coexisting phases or different domains of the same phase can produce adaptive strains to maintain atomic coherency at the interfaces or domain walls. Such compatibility strains have influence on the energy potential as well as the stability of relative phases, leading to the appearance of energetically unfavorable monoclinic phases. Those competing and coexisting phases also construct an easy phase transition path with small energy barrier in between, so that very small stimuli can produce large response in compositions near the morphotropic phase boundary, especially near the tricritical point.

Theoretical study on phase coexistence in ferroelectric solid solutions near the tricritical point

International Nuclear Information System (INIS)

Lu, Xiaoyan; Li, Hui; Zheng, Limei; Cao, Wenwu

2015-01-01

Phase coexistence in ferroelectric solid solutions near the tricritical point has been theoretically analyzed by using the Landau-Devonshire theory. Results revealed that different phases having similar potential wells could coexist in a narrow composition range near the tricritical point in the classical Pb(Zr 1−x Ti x )O 3 system. The potential barrier between potential wells increases with the decrease of temperature. Coexisting phases or different domains of the same phase can produce adaptive strains to maintain atomic coherency at the interfaces or domain walls. Such compatibility strains have influence on the energy potential as well as the stability of relative phases, leading to the appearance of energetically unfavorable monoclinic phases. Those competing and coexisting phases also construct an easy phase transition path with small energy barrier in between, so that very small stimuli can produce large response in compositions near the morphotropic phase boundary, especially near the tricritical point

Determination of ferroelectric contributions to electromechanical response by frequency dependent piezoresponse force microscopy.

Science.gov (United States)

Seol, Daehee; Park, Seongjae; Varenyk, Olexandr V; Lee, Shinbuhm; Lee, Ho Nyung; Morozovska, Anna N; Kim, Yunseok

2016-07-28

Hysteresis loop analysis via piezoresponse force microscopy (PFM) is typically performed to probe the existence of ferroelectricity at the nanoscale. However, such an approach is rather complex in accurately determining the pure contribution of ferroelectricity to the PFM. Here, we suggest a facile method to discriminate the ferroelectric effect from the electromechanical (EM) response through the use of frequency dependent ac amplitude sweep with combination of hysteresis loops in PFM. Our combined study through experimental and theoretical approaches verifies that this method can be used as a new tool to differentiate the ferroelectric effect from the other factors that contribute to the EM response.

Graphene Dirac point tuned by ferroelectric polarization field

Science.gov (United States)

Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-04-01

Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

Ferroelectric materials for FeRAMs; FeRAM yo kyoyudentai zairyo

Energy Technology Data Exchange (ETDEWEB)

Miyasaka, Y [NEC Corp., Tokyo (Japan)

1998-10-01

Studies to utilize bistable spontaneous polarization of ferroelectric materials for non-volatile memory have already been started in the 1950`s. Recently, a possibility was indicated on a high-speed non-volatile RAM (FeRAM) with memory cell configuration combined with switching transistors as in DRAMs. This situation has led to performing very active studies on ferroelectric materials and electrode materials used in ferroelectric film cell capacitors. This paper summarizes the above research and development circumstances, as well as their future problems. On the other hand of having shown excellent fatigue resistance in the SrBi2Ta209(SBT) system, improvement has progressed steadily on the Pb(ZR, Ti)03 (abbreviated to PZT) system, which retains the mainstream position as the ferroelectric material for FeRAMs. Aiming at realizing a high integration FeRAM in the future will require discussions on property changes due to use of lower temperature and micronization in film formation, further improvement in relation with degradation such as in imprint, and elucidation of the mechanism. 31 refs., 3 figs.

Charging and switching of ferroelectrets: how much can ferroelectrets behave like ferroelectrics?

International Nuclear Information System (INIS)

Schwoediauer, R.; Graz, I.; Bauer, S.

2004-01-01

Dielectrics with good charge storage capability, so called charge electrets, are non or weakly-polar materials. Despite their non-polar nature porous charge electrets with internally charged surfaces can exhibit very pronounced piezoelectricity. Such systems have been termed 'ferroelectrets' and they have been receiving growing attention over the last few years. Their puzzling and unexpected features resemble very much those normally known from traditional ferroelectrics: ferroelectrets are piezo- and pyroelectric, their polarization can be reversed by means of an external field and electrical as well as mechanical hysteresis loops were observed. As conventional ferroelectrics are different and more complicated than ferromagnets, so are ferroelectrets different and more complex than most ferroelectrics. Here we report about the very different charging and switching mechanism in ferroelectrets, both in simple model-systems and in less simple foam structures. These mechanisms are crucial and form the basis for the striking phenomenological similarities to ferroelectrics. We also want to address some of the specific peculiarities and pitfalls related to present ferroelectrets and their characterization. Interfacial charge injection at high electric fields and anelastic non-linearities, for instance, can be the cause for false ferroelectric-like hysteresis effects which do not reflect any polarization reversal. Our contribution is an attempt towards a more comprehensive picture of how much ferroelectrets behave like ferroelectrics. (author)

Innovative architectures in ferroelectric multi-materials: Chemistry, interfaces and strain

Directory of Open Access Journals (Sweden)

C. Elissalde

2015-06-01

Full Text Available Breakthroughs can be expected in multi-component ceramics by adjusting the phase assembly and the micro–nanostructure. Controlling the architecture of multi-materials at different scales is still challenging and provides a great opportunity to broaden the range of functionalities in the field of ferroelectric-based ceramics. We used the potentialities of Spark Plasma Sintering (SPS to control a number of key parameters regarding the properties: anisotropy, interfaces, grain size and strain effects. The flexibility of the wet and supercritical chemistry routes associated with the versatility of SPS allowed designing new ferroelectric composite ceramics at different scales. These approaches are illustrated through various examples based on our work on ferroelectric/dielectric composites.

Continuous Magnetoelectric Control in Multiferroic DyMnO3 Films with Twin-like Domains

Science.gov (United States)

Lu, Chengliang; Deniz, Hakan; Li, Xiang; Liu, Jun-Ming; Cheong, Sang-Wook

2016-02-01

The magnetic control of ferroelectric polarization is currently a central topic in the multiferroic researches, owing to the related gigantic magnetoelectric coupling and fascinating physics. Although a bunch of novel magnetoelectric effect have been discovered in multiferroics of magnetic origin, the manipulation of polarization was found to be fundamentally determined by the microscopic origin in a certain multiferroic phase, hindering the development of unusual magnetoelectric control. Here, we report emergent magnetoelectric control in DyMnO3/Nb:SrTiO3 (001) films showing twin-like domain structure. Our results demonstrate interesting magnetically induced partial switch of polarization due to the coexistence of polarizations along both the a-axis and c-axis enabled by the twin-like domain structure in DyMnO3 films, despite the polarization-switch was conventionally believed to be a one-step event in the bulk counterpart. Moreover, a continuous and periodic control of macroscopic polarization by an in-plane rotating magnetic field is evidenced in the thin films. This distinctive magnetic manipulation of polarization is the consequence of the cooperative action of the twin-like domains and the dual magnetic origin of polarization, which promises additional applications using the magnetic control of ferroelectricity.

Disparity of secondary electron emission in ferroelectric domains of YMnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Cheng, Shaobo; Deng, S. Q.; Yuan, Wenjuan; Yan, Yunjie; Zhu, Jing, E-mail: jzhu@tsinghua.edu.cn [National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084 (China); Li, J.; Li, J. Q. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2015-07-20

The applications of multiferroic materials require our understanding about the behaviors of domains with different polarization directions. Taking advantage of the scanning electron microscope, we investigate the polar surface of single crystal YMnO{sub 3} sample in secondary electron (SE) mode. By slowing down the scanning speed of electron beam, the negative surface potential of YMnO{sub 3} can be realized, and the domain contrast can be correspondingly changed. Under this experimental condition, with the help of a homemade Faraday cup, the difference of intrinsic SE emission coefficients of antiparallel domains is measured to be 0.12 and the downward polarization domains show a larger SE emission ability. Our results indicate that the total SE emission of this material can be altered by changing the ratio of the antiparallel domains, which provide an avenue for device design with this kind of materials.

The application of nonlinear dynamics in the study of ferroelectric materials

International Nuclear Information System (INIS)

Blochwitz, S.; Habel, R.; Diestelhorst, M.; Beige, H.

1996-01-01

It is well known that the structural phase transitions in ferroelectric materials are connected with strong nonlinear properties. So we can expect all features of nonlinear dynamical systems such as period-doubling cascades and chaos in a dynamical system that contains ferroelectric materials. Therefore we can apply nonlinear dynamics to these ferroelectric materials and we are doing it in two directions: (i) We study the structural phase transitions by analyzing the large signal behaviour with means of nonlinear dynamics. (ii) We control the chaotic behaviour of the system with the method proposed by Ott, Grebogi and Yorke. (authors)

Modelling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

International Nuclear Information System (INIS)

Morozovska, Anna N; Eliseev, Eugene A

2004-01-01

We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have modified the Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic values and the various hysteresis-loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films

Voltage tunability of thermal conductivity in ferroelectric materials

Science.gov (United States)

Ihlefeld, Jon; Hopkins, Patrick Edward

2016-02-09

A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

Graded ferroelectrics, transpacitors and transponents

CERN Document Server

Mantese, Joseph V

2005-01-01

The text details the experimental and theoretical aspects of newly emerging ferroelectric devices, and their extensions to other ferroic systems such as: ferromagnetics, ferroelastics, piezoelectrics, etc. The theory and experimental results pertaining to non-homogeneous active ferroic devices and structures are presented.

Tunable ferroelectric polarization and its interplay with spin-orbit coupling in tin iodide perovskites

Science.gov (United States)

Stroppa, Alessandro; di Sante, Domenico; Barone, Paolo; Bokdam, Menno; Kresse, Georg; Franchini, Cesare; Whangbo, Myung-Hwan; Picozzi, Silvia

2014-12-01

Ferroelectricity is a potentially crucial issue in halide perovskites, breakthrough materials in photovoltaic research. Using density functional theory simulations and symmetry analysis, we show that the lead-free perovskite iodide (FA)SnI3, containing the planar formamidinium cation FA, (NH2CHNH2)+, is ferroelectric. In fact, the perpendicular arrangement of FA planes, leading to a ‘weak’ polarization, is energetically more stable than parallel arrangements of FA planes, being either antiferroelectric or ‘strong’ ferroelectric. Moreover, we show that the ‘weak’ and ‘strong’ ferroelectric states with the polar axis along different crystallographic directions are energetically competing. Therefore, at least at low temperatures, an electric field could stabilize different states with the polarization rotated by π/4, resulting in a highly tunable ferroelectricity appealing for multistate logic. Intriguingly, the relatively strong spin-orbit coupling in noncentrosymmetric (FA)SnI3 gives rise to a co-existence of Rashba and Dresselhaus effects and to a spin texture that can be induced, tuned and switched by an electric field controlling the ferroelectric state.

Percolation Magnetism in Ferroelectric Nanoparticles

Science.gov (United States)

Golovina, Iryna S.; Lemishko, Serhii V.; Morozovska, Anna N.

2017-06-01

Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

Percolation Magnetism in Ferroelectric Nanoparticles.

Science.gov (United States)

Golovina, Iryna S; Lemishko, Serhii V; Morozovska, Anna N

2017-12-01

Nanoparticles of potassium tantalate (KTaO 3 ) and potassium niobate (KNbO 3 ) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe 3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

Ferroelectric, magnetic and structural studies of the Bi4LaSmFe2Ti3O18 multiferroic material

International Nuclear Information System (INIS)

Alarcón-Suesca, C.E.; Cardona-Vásquez, J.A.; Salcedo-Fontecha, J.P.; Vargas-Jiménez, A.; Landínez-Téllez, D.A.; Roa-Rojas, J.

2014-01-01

We report the synthesis and characterization of the new Bi 4 LaSmFe 2 Ti 3 O 18 ferroelectric ceramic. X-ray characterization reveals reflections for layered perovskite Aurivillius system. Rietveld analyses of the powder pattern shows that Bi 4 LaSmFe 2 Ti 3 O 18 crystallizes in orthorhombic structure, which corresponds to the space group F2/mm (#42), with lattice parameters a=5.4240(16) Ǻ, b=5.4078(23) Ǻ and c=50.2440(12) Ǻ. Scanning electron microscopy (SEM) reveals the formation of dense material with plate-like morphology. Electric polarization curves were measured by means of a radiant ferroelectric tester, at room temperature in bulk samples and exhibit an intrinsic ferroelectric response, even at low applied fields. Measurements of the magnetization as a function of temperature after Zero field cooling and field cooling were carried out by using a MPMS Quantum Design SQUID magnetometer. We found an effective magnetic moment of 7.95 µB, which is 95.8% in agreement with the expected value calculated from Hund's rules. Magnetization curves as the function of applied fields reveal an incipient hysteretic behavior at room temperature

Exchange coupling in permalloy/BiFeO3 heterostructures

Science.gov (United States)

Heron, John; Wang, Chen; Carlton, David; Nowakowski, Mark; Gajek, Martin; Awschalom, David; Bokor, Jeff; Ralph, Dan; Ramesh, R.

2010-03-01

BiFeO3 is a ferroelectric and antiferromagnetic multiferroic with the ferroelectric and antiferromagnetic order parameters coupled at room temperature. This coupling results in the reorientation of the ferroelectric and magnetic domains as applied voltages switch the electric polarization. Previous studies using ferromagnet/BiFeO3 heterostructures have shown that the anisotropy of the ferromagnetic layer can be tuned by the ferroelectric domain structure of the BiFeO3 film [1, 2]. The physical mechanism driving this exchange bias with BiFeO3 is still under investigation. We use patterned permalloy structures, with varying aspect ratios, on BiFeO3 thin films to investigate the physics of this interaction. The results of our studies using MFM, PEEM, and MOKE to understand this mechanism as a means to electric field control of magnetic structures will be presented. [4pt] [1] H. Bea et al., Physical Review Letters 100, 017204 (2008).[0pt] [2] L.W. Martin et al., Nanoletters 8, 2050 (2008).

Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Kumar, Ashok, E-mail: ashok553@nplindia.org; Shukla, A. K. [National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi-110012 (India); Barrionuevo, D.; Ortega, N.; Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 (United States); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering - IMRE, Agency for Science Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Scott, J. F. [Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST (United Kingdom)

2015-03-30

Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

Structural, magnetic and electrical properties of ferromagnetic/ferroelectric multilayers

International Nuclear Information System (INIS)

Sirena, M.; Kaul, E.; Guimpel, J.; Steren, L. B.; Pedreros, M. B.; Rodriguez, C. A.

2011-01-01

The La 0.75 Sr 0.25 MnO 3 (LSMO)/Ba 0.7 Sr 0.3 TiO 3 (BSTO) superlattices and bilayers, where LSMO is ferromagnetic and BSTO is ferroelectric, were grown by dc sputtering. X-ray diffraction indicates that the samples present a textured growth with the c axis perpendicular to the substrate. Magnetization measurements show a decrease of the sample's magnetization for decreasing ferromagnetic thickness. This effect could be related to the presence of biaxial strain and a magnetic dead layer in the samples. Conductive atomic force microscopy indicates that the samples present a total covering of the ferromagnetic layer for a ferroelectric thickness higher than four unit cells. Transport tunneling of the carriers seems to be the preferred conduction mechanism through the ferroelectric layer. These are promising results for the development of multiferroic tunnel junctions.

Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

Energy Technology Data Exchange (ETDEWEB)

Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

2010-11-15

The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

Polarization-switching dynamics and microstructures of ferroelectric (Bi0.5Na0.5)TiO3 single crystals

Science.gov (United States)

Yanai, Ken; Onozuka, Hiroaki; Kitanaka, Yuuki; Noguchi, Yuji; Miyayama, Masaru; Moriyoshi, Chikako; Kuroiwa, Yoshihiro; Kurushima, Kousuke; Mori, Shigeo

2013-04-01

Single crystals of ferroelectric (Bi0.5Na0.5)TiO3 were successfully grown by using the top-seeded solution growth method at a high oxygen pressure of 0.9 MPa and their polarization switching dynamics along the c direction and their domain structures were investigated. Piezoelectric force microscope (PFM) observations show that BNT crystals poled along the c direction. had 71-degree domains in which the spontaneous polarization ( P s ) vector was opposite to the direction of the poling electric field. Synchrotron-radiation single-crystal X-ray diffraction analyses and PFM observations revealed that the polarization switching in the BNT crystals along the c direction was achieved by a 71-degree rotation of the P s vector.

Polarization fatigue in ferroelectric Pb(Zr0.52Ti0.48)O3-SrBi2Nb2O9 ceramics

Science.gov (United States)

Namsar, Orapim; Pojprapai, Soodkhet; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

2015-09-01

Ferroelectric fatigue induced by cyclic electric loading of the (1- x)PZT- xSBN ceramics (0.1 ≤ x ≤ 0.3) have been investigated in comparison with pure PZT and SBN ceramics. The results showed that pure PZT ceramic possessed severe polarization fatigue after long bipolar switching pulses. This was mainly attributed to the appearance of microstructural damage at the near-electrode regions. Whereas, pure SBN ceramic exhibited no fatigue at least up to 1 × 106 switching cycles. The fatigue-free behavior of SBN ceramics was due primarily to weak domain wall pinning. PZT-SBN ceramics showed less polarization fatigue up to 1 × 106 switching cycles than pure PZT. This could be attributed to their low oxygen vacancy concentration. Therefore, this new ceramic PZT-SBN system seems to be an alternative material for replacing PZT in ferroelectric memory applications. [Figure not available: see fulltext.

AB initio energetics of lanthanum substitution in ferroelectric bismuth titanate

International Nuclear Information System (INIS)

Shah, S.H.

2012-01-01

Density functional theory based electronic structure calculations play a vital role in understanding, controlling and optimizing physical properties of materials at microscopic level. In present study system of interest is bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/)/(BIT) which has wide range of applications such as a high temperature piezoelectric and one of the best material for memory devices. However, it also suffers from serious issues such as oxygen vacancies which degrade its performance as a memory element and piezoelectric material. In this context, the bulk and defect properties of orthorhombic bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) and bismuth lanthanum titanate (Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/)/(BLT, x=0.75) were investigated by using first principles calculations and atomistic thermodynamics. Heats of formation, valid chemical conditions for synthesis, lanthanum substitution energies and oxygen and bismuth vacancy formation energies were computed. The study improves understanding of how native point defects and substitutional impurities influence the ferroelectric properties of these layered perovskite materials. It was found that lanthanum incorporation could occur on either of the two distinct bismuth sites in the structure and that the effect of substitution is to increase the formation energy of nearby native oxygen vacancies. The results provide direct atomistic evidence over a range of chemical conditions for the suggestion that lanthanum incorporation reduces the oxygen vacancy concentration. Oxygen vacancies contribute to ferroelectric fatigue by interacting strongly with domain walls and therefore a decrease in their concentration is beneficial. (orig./A.B.)

Ferroelectric tunnel junctions with multi-quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

2014-06-02

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

A study of radiation vulnerability of ferroelectric material and devices

International Nuclear Information System (INIS)

Coiec, Y.M.; Musseau, O.; Leray, J.L.

1994-01-01

The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad(Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' x-rays and 60 Co gamma rays

Time-resolved imaging of domain pattern destruction and recovery via nonequilibrium magnetization states

Science.gov (United States)

Wessels, Philipp; Ewald, Johannes; Wieland, Marek; Nisius, Thomas; Vogel, Andreas; Viefhaus, Jens; Meier, Guido; Wilhein, Thomas; Drescher, Markus

2014-11-01

The destruction and formation of equilibrium multidomain patterns in permalloy (Ni80Fe20 ) microsquares has been captured using pump-probe x-ray magnetic circular dichroism (XMCD) spectromicroscopy at a new full-field magnetic transmission soft x-ray microscopy endstation with subnanosecond time resolution. The movie sequences show the dynamic magnetization response to intense Oersted field pulses of approximately 200-ps root mean square (rms) duration and the magnetization reorganization to the ground-state domain configuration. The measurements display how a vortex flux-closure magnetization distribution emerges out of a nonequilibrium uniform single-domain state. During the destruction of the initial vortex pattern, we have traced the motion of the central vortex core that is ejected out of the microsquare at high velocities exceeding 1 km/s. A reproducible recovery into a defined final vortex state with stable chirality and polarity could be achieved. Using an additional external bias field, the transient reversal of the square magnetization direction could be monitored and consistently reproduced by micromagnetic simulations.

Synthesis, characterization, properties, and applications of nanosized ferroelectric, ferromagnetic, or multiferroic materials

International Nuclear Information System (INIS)

Dhak, Debasis; Das, Soma; Communication Engineering.); Dhak, Prasanta

2015-01-01

Recently, there has been an enormous increase in research activity in the field of ferroelectrics and ferromagnetics especially in multiferroic materials which possess both ferroelectric and ferromagnetic properties simultaneously. However, the ferroelectric, ferromagnetic, and multiferroic properties should be further improved from the utilitarian and commercial viewpoints. Nanostructural materials are central to the evolution of future electronics and information technologies. Ferroelectrics and ferromagnetics have already been established as a dominant branch in electronics sector because of their diverse applications. The ongoing dimensional downscaling of materials to allow packing of increased numbers of components into integrated circuits provides the momentum for evolution of nanostructural devices. Nanoscaling of the above materials can result in a modification of their functionality. Furthermore, nanoscaling can be used to form high density arrays of nanodomain nanostructures, which is desirable for miniaturization of devices

Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

International Nuclear Information System (INIS)

Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

2007-01-01

The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

Frontiers of ferroelectricity a special issue of the journal of materials science

CERN Document Server

Lang, Sidney B

2007-01-01

The book presents theory, fundamentals and some applications of ferroelectricy. The 24 chapters comprise reviews and research reports covering the spectrum of ferroelectricity. It is intended to describe the current levels of understanding of various aspects of ferroelectricity as presented by authorities in the field. Topics include relaxors, piezoelectrics, microscale and nanoscale studies, polymers and composites, unusual properties, and techniques and devices. The information in this book is intended for physicists, engineers and materials scientists working with ferroelectric materials including ceramics, single crystals, polymers, composites and even some biological materials.

Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

KAUST Repository

Ma, He; Gao, Wenxiu; Wang, Junling; Wu, Tao; Yuan, Guoliang; Liu, Junming; Liu, Zhiguo

2016-01-01

The weak bond energy and large anisotropic domain wall energy induce many special characteristics of the domain nucleation, growth, and polarization switch in triglycine sulfate (TGS) and imidazolium perchlorate (IM), two typical molecular

Investigation of domain walls in PPLN by confocal raman microscopy and PCA analysis

Science.gov (United States)

Shur, Vladimir Ya.; Zelenovskiy, Pavel; Bourson, Patrice

2017-07-01

Confocal Raman microscopy (CRM) is a powerful tool for investigation of ferroelectric domains. Mechanical stresses and electric fields existed in the vicinity of neutral and charged domain walls modify frequency, intensity and width of spectral lines [1], thus allowing to visualize micro- and nanodomain structures both at the surface and in the bulk of the crystal [2,3]. Stresses and fields are naturally coupled in ferroelectrics due to inverse piezoelectric effect and hardly can be separated in Raman spectra. PCA is a powerful statistical method for analysis of large data matrix providing a set of orthogonal variables, called principal components (PCs). PCA is widely used for classification of experimental data, for example, in crystallization experiments, for detection of small amounts of components in solid mixtures etc. [4,5]. In Raman spectroscopy PCA was applied for analysis of phase transitions and provided critical pressure with good accuracy [6]. In the present work we for the first time applied Principal Component Analysis (PCA) method for analysis of Raman spectra measured in periodically poled lithium niobate (PPLN). We found that principal components demonstrate different sensitivity to mechanical stresses and electric fields in the vicinity of the domain walls. This allowed us to separately visualize spatial distribution of fields and electric fields at the surface and in the bulk of PPLN.

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

Science.gov (United States)

Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

2015-12-01

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

Total-dose radiation-induced degradation of thin film ferroelectric capacitors

International Nuclear Information System (INIS)

Schwank, J.R.; Nasby, R.D.; Miller, S.L.; Rodgers, M.S.; Dressendorfer, P.V.

1990-01-01

Thin film PbZr y Ti 1-y O 3 (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation

Operation of Ferroelectric Plasma Sources in a Gas Discharge Mode

International Nuclear Information System (INIS)

Dunaevsky, A.; Fisch, N.J.

2004-01-01

Ferroelectric plasma sources in vacuum are known as sources of ablative plasma, formed due to surface discharge. In this paper, observations of a gas discharge mode of operation of the ferroelectric plasma sources (FPS) are reported. The gas discharge appears at pressures between approximately 20 and approximately 80 Torr. At pressures of 1-20 Torr, there is a transition from vacuum surface discharge to the gas discharge, when both modes coexist and the surface discharges sustain the gas discharge. At pressures between 20 and 80 Torr, the surface discharges are suppressed, and FPS operate in pure gas discharge mode, with the formation of almost uniform plasma along the entire surface of the ceramics between strips. The density of the expanding plasma is estimated to be about 1013 cm-3 at a distance of 5.5 mm from the surface. The power consumption of the discharge is comparatively low, making it useful for various applications. This paper also presents direct measurements of the yield of secondary electron emission from ferroelectric ceramics, which, at low energies of primary electrons, is high and dependent on the polarization of the ferroelectric material

Organic ferroelectric opto-electronic memories

NARCIS (Netherlands)

Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

2011-01-01

Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

Near-field terahertz imaging of ferroelectric domains in barium titanate

Czech Academy of Sciences Publication Activity Database

Berta, Milan; Kadlec, Filip

2010-01-01

Roč. 83, 10-11 (2010), 985-993 ISSN 0141-1594 R&D Projects: GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : singular value decomposition * domain structure imaging * near-field terahertz microscopy * subwavelength resolution Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.006, year: 2010

Electric field cycling behavior of ferroelectric hafnium oxide.

Science.gov (United States)

Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

2014-11-26

HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

Improper ferroelectric polarization in a perovskite driven by intersite charge transfer and ordering

Science.gov (United States)

Chen, Wei-Tin; Wang, Chin-Wei; Wu, Hung-Cheng; Chou, Fang-Cheng; Yang, Hung-Duen; Simonov, Arkadiy; Senn, M. S.

2018-04-01

It is of great interest to design and make materials in which ferroelectric polarization is coupled to other order parameters such as lattice, magnetic, and electronic instabilities. Such materials will be invaluable in next-generation data storage devices. Recently, remarkable progress has been made in understanding improper ferroelectric coupling mechanisms that arise from lattice and magnetic instabilities. However, although theoretically predicted, a compact lattice coupling between electronic and ferroelectric (polar) instabilities has yet to be realized. Here we report detailed crystallographic studies of a perovskite HgAMn3A'Mn4BO12 that is found to exhibit a polar ground state on account of such couplings that arise from charge and orbital ordering on both the A'- and B-sites, which are themselves driven by a highly unusual MnA '-MnB intersite charge transfer. The inherent coupling of polar, charge, orbital, and hence magnetic degrees of freedom make this a system of great fundamental interest, and demonstrating ferroelectric switching in this and a host of recently reported hybrid improper ferroelectrics remains a substantial challenge.

Elasticity Imaging of Ferroelectric Domain Structure in PZT by Ultrasonic Atomic Force Microscopy

International Nuclear Information System (INIS)

Tsuji, T.; Ogiso, H.; Fukuda, K.; Yamanaka, K.

2004-01-01

UAFM was applied to the observation of the domain structure in lead zirconate titanate (PZT). It imaged the change of elasticity due to grain and domain boundary (DB). For the quantitative evaluation of the contact stiffness, the lateral contact stiffness was taken into account. The stiffness of DB was 10% lower than that within the domain and the width of the DB was about 30 nm. The implication of this work is the understanding of the fatigue mechanism in a PZT memory and the high resolution imaging for a high-density memory

Fracture mechanics of piezoelectric and ferroelectric solids

CERN Document Server

Fang, Daining

2013-01-01

Fracture Mechanics of Piezoelectric and Ferroelectric Solids presents a systematic and comprehensive coverage of the fracture mechanics of piezoelectric/ferroelectric materials, which includes the theoretical analysis, numerical computations and experimental observations. The main emphasis is placed on the mechanics description of various crack problems such static, dynamic and interface fractures as well as the physical explanations for the mechanism of electrically induced fracture. The book is intended for postgraduate students, researchers and engineers in the fields of solid mechanics, applied physics, material science and mechanical engineering. Dr. Daining Fang is a professor at the School of Aerospace, Tsinghua University, China; Dr. Jinxi Liu is a professor at the Department of Engineering Mechanics, Shijiazhuang Railway Institute, China.

A study of radiation vulnerability of ferroelectric material and devices

Energy Technology Data Exchange (ETDEWEB)

Coic, Y M; Musseau, O; Leray, J L [CEA Centre d` Etudes de Bruyeres-le-Chatel, 91 (France)

1994-12-31

The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ``10 keV Aracor`` s-rays and {sup 60}Co gamma rays. (author). 24 refs., 11 figs., 7 tabs.

A study of radiation vulnerability of ferroelectric material and devices

International Nuclear Information System (INIS)

Coic, Y.M.; Musseau, O.; Leray, J.L.

1994-01-01

The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' s-rays and 60 Co gamma rays. (author). 24 refs., 11 figs., 7 tabs

Damage-free patterning of ferroelectric lead zirconate titanate thin films for microelectromechanical systems via contact printing

Science.gov (United States)

Welsh, Aaron

This thesis describes the utilization and optimization of the soft lithographic technique, microcontact printing, to additively pattern ferroelectric lead zirconate titanate (PZT) thin films for application in microelectromechanical systems (MEMS). For this purpose, the solution wetting, pattern transfer, printing dynamics, stamp/substrate configurations, and processing damages were optimized for incorporation of PZT thin films into a bio-mass sensor application. This patterning technique transfers liquid ceramic precursors onto a device stack in a desired configuration either through pattern definition in the stamp, substrate or both surfaces. It was determined that for ideal transfer of the pattern from the stamp to the substrate surface, wetting between the solution and the printing surface is paramount. To this end, polyurethane-based stamp surfaces were shown to be wet uniformly by polar solutions. Patterned stamp surfaces revealed that printing from raised features onto flat substrates could be accomplished with a minimum feature size of 5 mum. Films patterned by printing as a function of thickness (0.1 to 1 mum) showed analogous functional properties to continuous films that were not patterned. Specifically, 1 mum thick PZT printed features had a relative permittivity of 1050 +/- 10 and a loss tangent of 2.0 +/- 0.4 % at 10 kHz; remanent polarization was 30 +/- 0.4 muC/cm 2 and the coercive field was 45 +/- 1 kV/cm; and a piezoelectric coefficient e31,f of -7 +/- 0.4 C/m2. No pinching in the minor hysteresis loops or splitting of the first order reversal curve (FORC) distributions was observed. Non-uniform distribution of the solution over the printed area becomes more problematic as feature size is decreased. This resulted in solutions printed from 5 mum wide raised features exhibiting a parabolic shape with sidewall angles of ˜ 1 degree. As an alternative, printing solutions from recesses in the stamp surface resulted in more uniform solution thickness

Liquid crystals with novel terminal chains as ferroelectric liquid crystal hosts

International Nuclear Information System (INIS)

Cosquer, G.Y.

2000-02-01

Changes to the molecular structure of liquid crystals can have a significant effect upon their mesomorphism and ferroelectric properties. Most of the research in liquid crystal for display applications concentrates on the design and synthesis of novel mesogenic cores to which straight terminal alkyl or alkoxy chains are attached. However, little is known about the effects upon the mesomorphism and ferroelectric properties of varying the terminal chains. The compounds prepared in this work have a common core - a 2,3-difluoroterphenyl unit with a nine-atom alkyl (nonyl) or alkoxy (octyloxy) chain at the 4-position, but with an unusual chain at the 4''-position. In some cases the terminal chain contains hetero atoms such as silicon, oxygen, chlorine and bromine or has a bulky end group. In total 46 final materials were synthesised in an attempt to understand the effect of an unusual terminal chains on mesomorphism and for some of these compounds the effect upon the switching times when added to a standard ferroelectric mixture were investigated. It was found that most compounds containing a bulky end group only displayed a smectic C phase, compounds with a halogen substituent as an end unit displayed a smectic A phase and that increasing the chain flexibility by introducing an oxygen atom in the chain reduces the melting and clearing points. The electro-optical measurements carried out on ferroelectric mixtures containing a bulky end group compound showed that shorter switching times were produced than for the ferroelectric mixture containing a straight chain compound. It is suggested that a bulky end group diminishes te extent of interlayer mixing in the chiral smectic C phase and therefore the molecules move more easily with ferroelectric switching. (author)

Field-induced strain memory with non-180 .deg. domain-reorientation control

International Nuclear Information System (INIS)

Kadota, Yoichi; Hosaka, Hiroshi; Morita, Takeshi

2010-01-01

Using non-180 .deg. domain-reorientation control, we propose the strain memory effect in ferroelectric ceramics. Electric fields with asymmetric amplitudes were applied to soft-type lead zirconate titanate (PZT) ceramics, and the strain hysteresis and the polarization loop were measured. The butterfly curve became asymmetric under an electric field with a particular asymmetric amplitude. The asymmetric butterfly curve had two stable strain states at zero electric field. Thus, the strain memory effect was realized as the difference between the two stable strain states. An XRD analysis was carried out to verify the contribution of the non-180 .deg. domain reorientation to the strain memory effect. The non-180 .deg. domain reorientation was determined as the intensity ratio of the (002) to the (200) peak. The strain memory determined from macroscopic strain measurements had a linear relationship to the non-180 .deg. domain volume fraction. This result indicated the origin of the strain memory to be the non-180 .deg. domain reorientation.

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

NARCIS (Netherlands)

Lee, J.; Breemen, A.J.J.M. van; Khikhlovskyi, V.; Kemerink, M.; Janssen, R.A.J.; Gelinck, G.H.

2016-01-01

We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism

Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

Science.gov (United States)

Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

2013-01-01

Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

Terahertz-range polar modes in domain-engineered BiFeO.sub.3./sub.

Czech Academy of Sciences Publication Activity Database

Hlinka, Jiří; Pasciak, Marek; Körbel, S.; Márton, Pavel

2017-01-01

Roč. 119, č. 5 (2017), 1-6, č. článku 057604. ISSN 0031-9007 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : ferroelectric domain walls * bismuth ferrite * terahertz spectroscopy * phonons * dielectric permittivity Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 8.462, year: 2016

Ferroelectricity the fundamentals collection

CERN Document Server

Jimenez, Basilio

2008-01-01

This indispensable collection of seminal papers on ferroelectricity provides an overview over almost a hundred years of basic and applied research. Containing historic contributions from renowned authors, this book presents developments in an area of science that is still rapidly growing. Although primarily aimed at scientists and academics involved in research, this will also be of use to students as well as newcomers to the field.

Dynamics of ferroelectric nanodomains in BaTiO3 epitaxial thin films via piezoresponse force microscopy

International Nuclear Information System (INIS)

Pertsev, N A; Petraru, A; Kohlstedt, H; Waser, R; Bdikin, I K; Kiselev, D; Kholkin, A L

2008-01-01

Ferroelectric nanodomains were created in BaTiO 3 thin films by applying a voltage to a sharp conducting tip of a scanning force microscope (SFM). The films were epitaxially grown on SrRuO 3 -covered (001)-oriented SrTiO 3 substrates by a high-pressure sputtering. They appeared to be single-crystalline with the (001) crystallographic orientation relative to the substrate. Using the piezoresponse mode of the SFM to detect the out-of-plane film polarization, the domain sizes were measured as a function of the applied writing voltage and the pulse time. It was found that the time dependence of the domain diameter in a 60 nm thick BaTiO 3 film deviates significantly from the logarithmic law observed earlier in Pb(Zr 0.2 Ti 0.8 )O 3 (PZT) films. At a given writing time, the domain size increases nonlinearly with increasing applied voltage, in contrast to the linear behavior reported earlier for PZT films and LiNbO 3 single crystals. The dynamics of domain growth is analyzed theoretically taking into account the strong inhomogeneity of the external electric field in the film and the influence of the bottom electrode. It is shown that the observed writing time and voltage dependences of the domain size can be explained by the domain-wall creep in the presence of random-bond disorder

Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

Science.gov (United States)

Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

2016-03-08

Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

Hysteresis loop behaviors of ferroelectric thin films:A Monte Carlo simulation study

Institute of Scientific and Technical Information of China (English)

C. M. Bedoya-Hincapi´e; H. H. Ortiz-´Alvarez; E. Restrepo-Parra; J. J. Olaya-Fl´orez; J. E. Alfonso

2015-01-01

The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole–dipole interaction in the transversal (x–y) direction, and the nearest dipole–dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.

Optical temperature sensing by upconversion luminescence of Er doped Bi5TiNbWO15ferroelectric materials