The Stability of Magnetite and its Significance as a Passivating Film in the Repository Environment

International Nuclear Information System (INIS)

Hermansson, Hans-Peter

2004-01-01

A literature review was made in order to highlight if magnetite could be formed as a passivating film on iron in the expected repository environment. The possibility to form other types of passivating films has also been regarded, e.g. other iron oxides or mixed oxides of iron and copper and also sulfides. The conditions for the formation of different types of films have been discussed as well as their compositions and properties. It is concluded that magnetite could certainly be formed on iron at repository combinations of Eh and pH in the absence of sulphide and chloride. However, magnetite could easily be outnumbered by other solid phases that could be formed at the simultaneous presence of copper. CuFeO 2 is such a phase that could appear in a simple Fe-Cu-O-H system. As soon as sulphide and chloride are present other phases like CuFeS 2 could also be responsible for the passivation of iron. The probability that magnetite is the passivating film on cast iron at the actual conditions is therefore not very large. It is more likely that the passivating film instead consists of CuFeO 2 and/or CuFeS 2 , the latter depending on the concentration of sulphur in the system. The protective ability of the alternate compounds as passivating films could be discussed. A suggested ranking order of the protective ability is given in the discussion part. If magnetite is not stable, the integrity of the cast iron insert could therefore in such cases be dependent on the protection by less effective passivating substances. The hypothesis of the formation and nature of alternative passivating films should be tested at relevant conditions in laboratory experiments

Effect of Cr on the passive film formation mechanism of steel rebar in saturated calcium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Liu, Ming; Cheng, Xuequn [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China); Li, Xiaogang, E-mail: lixiaogang@ustb.edu.cn [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China); Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang (China); Pan, Yue; Li, Jun [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China)

2016-12-15

Highlights: • Cr inhibits the formation of passive film at the beginning of its formation. • Cr promotes the formation of a denser and more compact passive film. • The passive film thickness presents a slight increase as the content of Cr goes up. - Abstract: Passive films grow on the surface of Cr-modified steels subjected to saturated Ca(OH){sub 2} solution. Electrochemical techniques, such as measurement of open circuit potentials, polarization curves, and electrochemical impedance spectroscopy combined with X-ray photoelectron spectrometer and auger electron spectroscopy, were applied to study the influence of low Cr content on the passive film formation mechanism of steel rebar in saturated Ca(OH){sub 2} solution. Results show that Cr inhibits the formation of passive film at the beginning of its formation. Corrosion current density decreases and polarization resistance increases with the extension of the immersion time. A stable passive film takes at least three days to form. The passive film resistance of HRB400 carbon steel is higher than that of Cr-modified steels in the early stage of immersion (<72 h). The polarization resistance of Cr-modified steel is larger after a stable passive film is formed (>72 h), and Cr promotes the formation of a denser and more compact passive film. The stable passive film is primarily made up of iron oxides with a thickness of 5–6 nm. Cr are involved in the formation of passive films, thereby resulting in a film that consists of an inner layer that contains Cr–Fe oxides and an outer layer that contains Fe oxides, whose thickness presents a slight increase as the content of Cr increases.

Study of passive films formed on mild steel in alkaline media by the application of anodic potentials

Energy Technology Data Exchange (ETDEWEB)

Freire, L. [Universidade de Vigo, E.T.S.E.I., Campus Universitario, 36310 Vigo (Spain)], E-mail: lorenafp@uvigo.es; Novoa, X.R. [Universidade de Vigo, E.T.S.E.I., Campus Universitario, 36310 Vigo (Spain); Montemor, M.F. [ICEMS - Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049 - 001 Lisboa (Portugal); Carmezim, M.J. [ICEMS - Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049 - 001 Lisboa (Portugal); EST Setubal, DEM, Instituto Politecnico de Setubal, Campus IPS, 2910 Setubal (Portugal)

2009-04-15

In this paper, iron oxide thin layers formed on mild steel substrates in alkaline media by the application of different anodic potentials were studied in order to characterize their morphology, composition and electrochemical behaviour, in particular under conditions of cathodic protection. The surface composition was evaluated by X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The morphology of the surface oxides was studied via Atomic Force Microscopy (AFM). The electrochemical behaviour of the surface oxides was studied using Electrochemical Impedance Spectroscopy (EIS). The results showed that the surface film is composed by Fe{sup 2+}oxides and Fe{sup 3+} oxides and/or hydroxides. The contribution of Fe{sup 2+} species vanishes when the potential of film formation increases in the passive domain. Two distinct phases were differentiated in the outer layers of the surface film, which proves that film growing is topotactic in nature.

Study of passive films formed on mild steel in alkaline media by the application of anodic potentials

International Nuclear Information System (INIS)

Freire, L.; Novoa, X.R.; Montemor, M.F.; Carmezim, M.J.

2009-01-01

In this paper, iron oxide thin layers formed on mild steel substrates in alkaline media by the application of different anodic potentials were studied in order to characterize their morphology, composition and electrochemical behaviour, in particular under conditions of cathodic protection. The surface composition was evaluated by X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The morphology of the surface oxides was studied via Atomic Force Microscopy (AFM). The electrochemical behaviour of the surface oxides was studied using Electrochemical Impedance Spectroscopy (EIS). The results showed that the surface film is composed by Fe 2+ oxides and Fe 3+ oxides and/or hydroxides. The contribution of Fe 2+ species vanishes when the potential of film formation increases in the passive domain. Two distinct phases were differentiated in the outer layers of the surface film, which proves that film growing is topotactic in nature

Electrochemical characterization of oxide film formed at high temperature on Alloy 690

Energy Technology Data Exchange (ETDEWEB)

Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

2012-02-15

Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

Stability of passive films on amorphous Fe-Cr alloys with boron and phosphorus with impedance spectroscopy

International Nuclear Information System (INIS)

Virtanen, S.; Elsener, B.; Boehni, H.

1989-01-01

The mechanism of the passivation and the effect of metalloids on the stability of the passive films of amorphous Fe-Cr-(B,P,C) alloys has been investigated by polarization measurements, impedance spectroscopy and potential decay measurements. The results show that phosphorus facilitates the active/passive-transition by forming a porous iron-phosphate pre-passive layer on the alloy surface in the active range of the dissolution. This layer blocks the active sites of the surface and accelerates the cathodic H 2 -evolution reaction. The formation of the passivating chromium oxide layer takes place in the pores of this layer. In the passive range of the alloys oxidized phosphorus gets incorporated in the outer layer of the passive film. The presence of oxidized phosphorus as PO 4 3- anions in the passive film increases the localized corrosion resistance in Cl-containing solutions. The effect of the incorporated phosphates in the passive film is discussed with respect to the bipolar fixed-charge induced passivity model. The phosphates make the outer layer of the passive film cation-selective and thus hinder the penetration of the chlorides into the film. The oxidized boron species cannot change the ion-selectivity of the film; instead of this they negatively affect the stability of the passive film. (author) 18 refs., 9 figs., 3 tabs

The non-linear fitting method to analyze the measured M-S plots of bipolar passive films

International Nuclear Information System (INIS)

Jiang Ruijing; Chen Changfeng; Zheng Shuqi

2010-01-01

Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the C sc -2 vs. V m plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the C sc -2 vs. V m plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of Nickel base alloy after being corroded in the environments with high temperatures and high partial pressures of H 2 S/CO 2 . The fitting results indicate that the non-linear fitting of M-S plots can well help to understand the anti-corrosion mechanism of bipolar passive films.

Passivation of cobalt nanocluster assembled thin films with hydrogen

DEFF Research Database (Denmark)

Romero, C.P.; Volodin, A.; Di Vece, M.

2012-01-01

The effect of hydrogen passivation on bare and Pd capped cobalt nanocluster assembled thin films was studied with Rutherford backscattering spectrometry (RBS) and magnetic force microscopy (MFM) after exposure to ambient conditions. The nanoclusters are produced in a laser vaporization cluster...... source in which the helium carrier gas was mixed with hydrogen. RBS revealed that oxidation of the Co nanoclusters is considerably reduced by the presence of hydrogen during cluster formation. The capping did not modify the influence of the passivation. The hydrogen passivation method is especially...... effective in cases when capping of the films is not desirable, for example for magnetic studies. Clear differences in the magnetic domain structures between hydrogen passivated and non-passivated Co nanocluster films were demonstrated by MFM and are attributed to a difference in inter-cluster magnetic...

Chemical properties of various organic electrolytes for lithium rechargeable batteries. Pt. 1.. Characterization of passivating layer formed on graphite in alkyl carbonate solutions

Energy Technology Data Exchange (ETDEWEB)

Mori, Shoichiro; Asahina, Hitoshi; Suzuki, Hitoshi; Yonei, Ayako; Yokoto, Kiyomi [Tsukuba Research Center, Mitsubishi Chemical Corporation, Ibaraki (Japan)

1997-09-01

The characteristics and reaction mechanisms of the passivating film formed on the surface of graphite were investigated in ethylene carbonate-diethyl carbonate solutions containing LiClO{sub 4}, LiPF{sub 6} and LiN(SO{sub 2}CF{sub 3}){sub 2}. The electron consumption resulting on the irreversible capacity of graphite was almost equivalent to that used in the one-electron reduction of Li{sup +} found in the film. The electrochemical reactions in the first discharge process may be divided into the following steps: (i) `initial film formation step` from 1.4 to 0.55 V; (ii) `main film formation step` from 0.55 to 0.2 V, and (iii) `lithium intercalation step from 0.2 to 0.0 V. Most of the passivating film is formed together with the lithium intercalation reaction at step (ii). The passivating film formed at this step contained a significant amount of organic film such as EtOCO{sub 2}Li, (CH{sub 2}OCO{sub 2}Li){sub 2}, etc. Through the consecutive formation of passivating film at steps (i) and (ii), lithium intercalation into graphite proceeds smoothly without further decomposition of organic electrolyte. (orig.)

Potential dependence of surface crystal structure of iron passive films in borate buffer solution

International Nuclear Information System (INIS)

Deng, Huihua; Nanjo, Hiroshi; Qian, Pu; Santosa, Arifin; Ishikawa, Ikuo; Kurata, Yoshiaki

2007-01-01

The effect of passivation potential on surface crystal structure, apparent thickness and passivity of oxide films formed on pure iron prepared by plasma sputter deposition was investigated. The crystallinity was improved with passivation potential and the width of atomically flat terraces was expanded to 6 nm when passivating at 750 mV for 15 min, as observed by ex situ scanning tunneling microscopy (STM) after aging in air (<30% RH). Apparent thickness and passivity are linearly dependent on passivation potential. The former weakly depends on passivation duration, the latter strongly depends on passivation duration. This is well explained by the correlation between crystal structure and passivity

Effect of SiO2 passivation overlayers on hillock formation in Al thin films

International Nuclear Information System (INIS)

Kim, Deok-kee

2012-01-01

Hillock formation in Al thin films with varying thicknesses of SiO 2 as a passivation layer was investigated during thermal cycling. Based on the stress measurements and the number of hillocks, 250 nm thick SiO 2 was thick enough to suppress the hillock formation and the suppression of hillock at 250 nm passivation and the lack of suppression at thinner passivation is related to the presence/absence of protection against the diffusive flow of atoms from the surrounding area to the surface due to the biaxial compressive stresses present in the film through the weak spots in the passivation layer. The stress state of Al films measured during annealing (the driving force for hillock formation) did not vary much with SiO 2 thickness. A small number of hillocks formed during the plasma enhanced chemical vapor deposition of SiO 2 overlayers at 300 °C. - Highlights: ► We examined the effect of SiO 2 overlayers on hillock formation in Al thin films. ► Thin overlayers were not effective in suppressing diffusive flow to the surface. ► A thick overlayer suppressed the diffusive flow from the interior to the surface. ► The stress state of Al films did not vary much with SiO 2 passivation thickness. ► High mechanical strength provided a large driving force for the large grain growth.

A study of semiconducting properties of hydrogen containing passive films

International Nuclear Information System (INIS)

Zeng, Y.M.; Luo, J.L.; Norton, P.R.

2004-01-01

Mott-Schottky and photoelectrochemical measurements were used to explore the effects of hydrogen and chloride ions on the electronic properties of the passive film on X70 micro-alloyed steel in a solution of 0.5 M NaHCO 3 . Mott-Schottky analyses have shown that hydrogen increases the capacitance and donor density, and decreases the flat band potential and the space charge layer thickness of the passive film. The photocurrent of the film is remarkably increased by hydrogen. The effects of hydrogen become more pronounced with an increase in the hydrogen charging current densities. Hydrogen has no noticeable effect on the band gap energy E g and the process by which hole-electron pairs are photo-generated in the film. The presence of chloride ions in the solution produces some similar effects on the electronic properties of the passive film to those observed with hydrogen, but reduces the photocurrent and increases the band gap energy of the film. No significant synergistic effects on the electronic properties of the passive film were observed in the presence of hydrogen and Cl - . These results provide very useful information for elucidating the mechanism by which hydrogen changes the properties of passive film and then promotes localized corrosion

The behavior of dissolution/passivation and the transformation of passive films during electrocoagulation: Influences of initial pH, Cr(VI) concentration, and alternating pulsed current

International Nuclear Information System (INIS)

Yang, Zhao-hui; Xu, Hai-yin; Zeng, Guang-ming; Luo, Yuan-ling; Yang, Xia; Huang, Jing; Wang, Li-ke; Song, Pei-pei

2015-01-01

Highlights: • Initial pH, Cr(VI) and APC could affect the behavior of dissolution/passivation in Fe-EC. • A dissolution/passivation region was constructed with different initial pH-Cr(VI). • The film was rich in Fe and Cr at high Cr(VI), whereas with lots of Fe but negligible of Cr at low Cr(VI). • The film was non-protective at long T APC , but became more stable and protective at short T APC . • Behavior of dissolution/passivation and passive film transformation in Fe-EC was elucidated. - Abstract: The passivation behavior of an iron anode for electrocoagulation (EC) was first investigated using response surface methodology (RSM). Tested initial pH range, Cr(VI) concentration and alternating pulsed current (APC) were 4.0 to 8.0, 52 to 520 mg L −1 and 10 to 590 s, respectively. The distance between electrodes was 25 mm, and K 2 SO 4 (1 g L −1 ) was used as the supporting electrolyte in a 2.5 L EC reactor. Results confirmed that initial pH, Cr(VI) concentration, and APC significantly influence the extent of passivation. Then, based on the interaction effect on passivation behavior between initial pH and Cr(VI) in RSM, a pH-Cr(VI)-dissolution/passivation diagram was constructed with galvanostatic measurements. The diagram showed an optimal dissolution region for EC operation. This optimum was characterized by a reasonable final pH for extended precipitation and little passivation. Results of the cyclic voltammetry and X-ray photoelectron spectroscopy revealed a significant difference in the composition and stability of oxide films in the region with more pronounced passivation. Interestingly, the APC had both positive and negative effect on the passivation behavior. Long period of APC (T APC = 590 s) produced a non-protective film, which favored the Fe 0 dissolution. However, a more stable and protective passive film with a uniform structure of Fe and Cr oxides was formed by short T APC (10 s). Based on the above results, this study elucidated the

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

Science.gov (United States)

Cieslak, W. R.; Delnick, F. M.; Peebles, D. E.; Rogers, J. W., Jr.

We have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electrodes in 1.5M LiAlCl/SOCl solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides.

The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study.

Science.gov (United States)

Jiang, Jin-Yang; Wang, Danqian; Chu, Hong-Yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

2017-04-14

An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed.

Photoelectrochemical studies on passive films of stainless steels

International Nuclear Information System (INIS)

Schmuki, P.; Boehni, H.

1992-01-01

Passive films on stainless steels, which are known to exhibit a significantly different susceptibility to pitting corrosion (DIN 1.4301, 1.4439, 1.4529), were in-situ examined by photoelectrochemistry. The results show that the photoresponse is determined by the defects in the electronic structure of the films leading to localized states in the band-gap region. It was found that the three different steels exhibit a different tailing of the density of states function into the band-gap region. The less deep localized states are present, the higher is the resistance of the material against pitting corrosion. It is therefore concluded that a correlation between the distribution of localized states in the passive film - i.e. its defect structure - and the stability of the film exists

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

Energy Technology Data Exchange (ETDEWEB)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

We have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides.

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

International Nuclear Information System (INIS)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

The authors have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electrodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

Science.gov (United States)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Silicon surface passivation using thin HfO2 films by atomic layer deposition

International Nuclear Information System (INIS)

Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

2015-01-01

Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Electronic structure and pitting behavior of 3003 aluminum alloy passivated under various conditions

International Nuclear Information System (INIS)

Liu, Y.; Meng, G.Z.; Cheng, Y.F.

2009-01-01

Passivity of aluminum (Al) alloy 3003 in air and in aqueous solutions without and with chloride ions was characterized by electrochemical measurements, including cyclic polarization, electrochemical impedance spectroscopy (EIS), localized EIS and potential of zero charge, Mott-Schottky analysis and secondary ion mass spectroscopy (SIMS) technique. Stability, pitting susceptibility and repassivation ability of Al alloy 3003 under various film-forming conditions were determined. Results demonstrated that passive films formed on 3003 Al alloy in air and in Na 2 SO 4 solution without and with NaCl addition show an n-type semiconductor in nature. The passive film formed in chloride-free solution is most stable, and that formed in chloride-containing solution is most unstable, with the film formed in air in between. Pitting of Al alloy 3003 passivated both in air and in aqueous solutions is inevitable in the presence of chloride ions. There is the strongest capability for the air-passivated Al alloy 3003 to repassivate, and the weakest repassivating capability for Al alloy 3003 passivated in chloride-containing solution. The resistance of the passivated Al alloy 3003 to pitting corrosion is dependent on the competitive effects of pitting (breakdown of passive film) and repassivation (repair of passive film). According to the differences between corrosion potential and potential of zero charge, passive film formed in air has the strongest capability to adsorb chloride ions, while the film formed in chloride-containing solution the least. Chloride ions causing pitting of passivated Al alloy 3003 in air and in chloride-free solution come from the test solution, while those resulting in pitting of passivated Al alloy 3003 in chloride-containing solution mainly exist in the film during film-forming stage.

Investigation of corrosion and analysis of passive films concerning some nickel alloys and stainless steels in reconstructed geological environments

International Nuclear Information System (INIS)

Jallerat, Nelly

1984-01-01

This research thesis addresses the corrosion behaviour of materials which might be used for the fabrication of radioactive waste containers. After a bibliographical study on films formed on Fe-Cr-Ni alloys, this research concentrates on passivation and de-passivation phenomena of three nickel-base alloys among the most resistant to corrosion and which also meet processing and economic criteria: Hastelloy C4, Inconel 625 and ZICNDU 25-20. Titanium and Ti-Pd alloy are also studied. Parameters governing pitting corrosion are notably studied. After a recall of knowledge on passive films formed on Fe-Cr-Ni alloys, and a presentation of experimental and technical conditions, the author reports and discussed the results obtained by electrochemical studies, reports the determination of factors governing alloy passivation in geological waters. The influence of some soluble impurities is notably studied. The author reports the analysis by glow discharge optical emission spectrometry to determine the composition of passive films with respect to geological water nature, the immersion duration and the electrode potential. Additional surface analyses are performed by X-ray photoelectron spectrometry (XPS or ESCA) and secondary ion mass spectrometry (SIMS). Finally, the author uses a dosing method by neutron radio-activation of alloy elements to determine dissolution mechanisms [fr

Effect of Molecular Structure on Modulation of Passivation Films on Copper Chemical Mechanical Planarization

Science.gov (United States)

Mlynarski, Amy

In order to optimize the chemical mechanical planarization (CMP) process, there is a need to further understand the synergistic relationship between chemical and mechanical parameters to enhance the polishing process. CMP chemistry is very complex, as it contains complexing agents, oxidizing agents, passivating agents, and abrasive particles. This variety of components ensues chaos within the system, which complicates the understanding of the direct impact each component has on the CMP process. In order for there to be efficiency in the polishing process, specifically for copper (Cu) polishing, the chemistry must create a softened passivation layer on the Cu surface that is able to be readily removed by applied mechanical abrasion. Focusing on Cu CMP, the oxidation of Cu to Cu2+ needs to be thoroughly understood in order to probe the formation of creating this ideal passivated layer, which protects recessed Cu regions. The type of film that is formed, the strength of the film, and even the efficiency of film removal will be altered depending on the chemistry of interaction at the Cu surface. This thesis focuses on understanding the working mechanism of the film formation on Cu, depending on the passivating agent added to the system. The different passivating agents used, more specifically benzotriazole (BTA), triazole (TAZ), salicylhydroxamic acid (SHA), and benzimidazole (BIA), have all been known to create a light coat of protection on the recessed metal, providing corrosion resistance. In order to study the differences in these films, many different techniques can be utilized to characterize the films, such as electrochemical scans, referred to as Tafel plots, which will be performed to compare the differences of the films. By altering the temperature within the system, the activation energy for each system can also be determined as another way to characterize the density of the passive film formed. Furthermore, the generation of *OH will be monitored since the

Optimized thin film coatings for passive radiative cooling applications

Science.gov (United States)

Naghshine, Babak B.; Saboonchi, Ahmad

2018-03-01

Passive radiative cooling is a very interesting method, which lays on low atmospheric downward radiation within 8-13 μm waveband at dry climates. Various thin film multilayer structures have been investigated in numerous experimental studies, in order to find better coatings to exploit the full potential of this method. However, theoretical works are handful and limited. In this paper, the Simulated Annealing and Genetic Algorithm are used to optimize a thin film multilayer structure for passive radiative cooling applications. Spectral radiative properties are calculated through the matrix formulation. Considering a wide range of materials, 30 high-potential convective shields are suggested. According to the calculations, cooling can be possible even under direct sunlight, using the introduced shields. Moreover, a few water-soluble materials are studied for the first time and the results show that, a KBr substrate coated by a thin CaF2 or polyethylene film can is very close to an ideal coating for passive radiative cooling at night.

Correlation between passive film-induced stress and stress corrosion cracking of α-Ti in a methanol solution at various potentials

International Nuclear Information System (INIS)

Guo, X.Z.; Gao, K.W.; Chu, W.Y.; Qiao, L.J.

2003-01-01

The flow stress of a specimen of α-Ti before unloading is different with the yield stress of the same specimen after unloading and forming a passive film through immersing in a methanol solution at various constant potentials. The difference is the passive film-induced stress. The film-induced stress and susceptibility to stress corrosion cracking (SCC) in the methanol solution at various potentials were measured. At the stable open-circuit potential and under anodic polarization, both film-induced tensile stress σ p and susceptibility to SCC had a maximum value. The film-induced stress and SCC susceptibility, however, decreased steeply with a decrease in potential under cathodic polarization. When the potential V≤-280 mV SCE , the film-induced stress became compressive; correspondingly, susceptibility to SCC was zero. Therefore, the variation of film-induced stress with potential was consistent with that of susceptibility to SCC. A large film-induced tensile stress is the necessary condition for SCC of α-Ti in the methanol solution. The symbol and amount of the film-induced stress were related to the compositions of the passive film, which have been analyzed using the X-ray photoelectron spectrum (XPS)

Effect of passive film on electrochemical surface treatment for indium tin oxide

International Nuclear Information System (INIS)

Wu, Yung-Fu; Chen, Chi-Hao

2013-01-01

Highlights: ► Oxalic, tartaric, and citric acid baths accompanying with applied voltages were used to treat the ITO surface. ► We investigated the changes in ITO surfaces by examining the potentiodynamic behavior of ITO films. ► AFM analysis showed the formation of a passive layer could assist to planarize surface. ► XPS analysis indicated this passive layer was mainly composed of SnO 2. ► A better planarization was obtained by treating in 3.0 wt.% tartaric acid at 0.5 V due to weak complexation strength. - Abstract: Changes in indium tin oxide (ITO) film surface during electrochemical treatment in oxalic acid, tartaric acid, and citric acid were investigated. Controlling the voltage applied on ITO film allows the formation of a passive layer, effectively protecting the film surface. X-ray photoelectron spectrometry showed that the passive layer composition was predominantly SnO 2 in tartaric acid, while a composite of tin oxide and tin carboxylate in citric or oxalic acid. Even though the passive films on ITO surface generated in these organic acids, the indium or tin could complex with the organic acid anions, enhancing the dissolution of ITO films. The experimental results show that the interaction between the dissolution and passivation could assist to planarize the ITO surface. We found that the optimal treatment at 0.5 V in 3 wt.% tartaric acid could provide the ITO surface with root-mean-squared roughness less than 1.0 nm, due to the weak complexing characteristics of tartaric acid.

Characterization of electrochemical and passive behaviour of Alloy 59 in acid solution

International Nuclear Information System (INIS)

Luo, Hong; Gao, Shujun; Dong, Chaofang; Li, Xiaogang

2014-01-01

Highlights: • A considerably thinner n-type passive film is observed on the Alloy-59. • The passive film formed in air was thicker than that formed in acid solution. • Primary constituents of passive film in air and acid solution are (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively. - Abstract: The electrochemical behaviour and passive film properties of the Alloy 59 in sulfuric acid solution was evaluated by the potentiodynamic electrochemical measurements, electrochemical impedance spectroscopy, Mott-Schottky approach, and ex situ surface analytical technique as X-ray photoelectron spectroscopy (XPS) and Auger Electronic Spectrometer (AES). The results confirmed that the Alloy 59 exhibits well passive behaviour. A considerably thinner n-type passive film is observed on this type alloy. Based on the evaluations of surface composition analysis, the primary constituents of passive film formed in the air and acid solution are different, with the (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively

Investigations on the passivity of iron in borate and phosphate buffers, pH 8.4

International Nuclear Information System (INIS)

Sieber, I.V.; Hildebrand, H.; Virtanen, S.; Schmuki, P.

2006-01-01

In the present work surface analytical experiments (XPS and AES) on the passive film on iron formed in borate and phosphate buffers (pH 8.4) have been carried out. In the passive film formed in phosphate buffer a significant amount of phosphates is found in the outer part of the film. Boron species are not significantly incorporated in the passive film formed in borate buffer. The mechanism of the reduction of the passive film depends strongly on the electrolyte composition. In borate buffer, cathodic polarization leads to reductive dissolution of the passive film whereas in phosphate buffer the passive film is converted into metallic iron without dissolution but via laterally inhomogeneously formation of an intermediate Fe(II) phosphate layer

Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

2017-01-30

Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

Evolution of Calcareous Deposits and Passive Film on 304 Stainless Steel with Cathodic Polarization in Sea Water

Directory of Open Access Journals (Sweden)

Tianxiang Sun

2018-05-01

Full Text Available The change of protective current density, the formation and growth of calcareous deposits, and the evolution of passive film on 304 stainless steel (SS were investigated at different potentials of cathodic polarization in sea water. Potentiostatic polarization, electrochemical impedance spectroscopy (EIS, and surface analysis techniques of scanning electron microscopy (SEM, energy dispersive X-ray (EDX microanalysis and X-ray diffraction (XRD were used to characterize the surface conditions. It was found that the protective current density was smaller for keeping polarization at −0.80 V (vs. saturated calomel electrode (SCE, same as below than that at −0.65 V. The calcareous deposits could not be formed on 304 SS with polarization at −0.50 V while it was well protected. The formation rate, the morphology, and the constituent of the calcareous deposits depended on the applied potential. The resistance of passive film on 304 SS decreased at the first stage and then increased when polarized at −0.80 V and −0.65 V, which was related to the reduction and the repair of passive film. For the stainless steel polarized at −0.50 V, the film resistance increased with polarization time, indicating that the growth of oxide film was promoted.

Thick-Film and LTCC Passive Components for High-Temperature Electronics

Directory of Open Access Journals (Sweden)

A. Dziedzic

2013-04-01

Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

Science.gov (United States)

Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

2015-12-09

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

Influence of cerium on passivity behavior of wrought AZ91 alloy

International Nuclear Information System (INIS)

Wang Henan; Li Ying; Wang Fuhui

2008-01-01

In this paper, more focus had been put on the passivity behavior of wrought AZ91 alloy with 1.5 mass% Ce. The passive current density of wrought AZ91 alloy increased with addition of Ce and the passive film became unstable. Structures and compositions of the passive films formed on wrought AZ91 alloy without and with Ce in 0.01 M NaOH aqueous solution were analyzed by potentiostatic polarization, potentiostatic-galvanostatic (P-G) transient technique and X-ray photoelectron spectroscopy (XPS). The results showed that Ce only accumulated in the inner layer of passive film in the form of CeO 2 . Further analysis revealed that there were two main effects of Ce on the passive process of wrought AZ91 alloy: first, the existence of CeO 2 in inner layer of passive film made mass transport through the passive film follow tangent hyperbolic (T) impedance instead of Warburg impedance (W); second, donor concentration (N d ) of the passive film increased by a factor 10 when 1.5 mass% Ce existed in wrought AZ91 alloy, which led to the higher passivity current density

Study by X-ray photoelectron spectroscopy (XPS) and radiochemistry (Cl36) of the interaction of chloride ions with a passive film formed on nickel

International Nuclear Information System (INIS)

Herbelin, Jean-Marc

1990-01-01

This research thesis reports the study of the influence of chlorides on nickel passivation by using a radiochemical method based on the use of the Cl 36 isotope and the X-ray photoelectron spectroscopy (XPS). The first one allows the in-situ determination of the adsorption of chlorides on the surface, or their inclusion in surface films during the electrochemical treatment. The XPS analysis allows the characterization of modifications induced by chlorides in passive films. The obtained results allow a better understanding in the interpretation of the mechanisms of corrosion induced by chloride ions [fr

Ellipsometric study of salt film formation during passivation

Energy Technology Data Exchange (ETDEWEB)

Wiechmann, Lee Warren [Univ. of Illinois, Urbana-Champaign, IL (United States)

1979-01-01

An experimental program was carried out to gain further understanding into the kinetics of salt film formation during repassivation of a corroding metal. Experiments were conducted using an ellipsometer to examine an electrode surface undergoing anodic dissolution and passivation. Because of the constraints of the ellipsometer, the sample had to be mounted vertically. As a consequence natural convection currents had to be taken into account. Calculation showed that the mass transfer limiting current was exceeded by transient currents, indicating that natural convection was present to an extent that could drastically change the system from the diffusion model that was proposed. It was determined that recessing the electrode led to minimized natural convective effects, and to uniform current distribution. The ellipsometer output provided times which were associated with precipitation and dissolution of the salt film. The experimental data was in good agreement with the mathematical model, further strengthening the precipitation-dissolution mechanism of passivation. Furthermore, a dimensionless model was shown capable of a first approximation of the passivation behavior of any metal. Investigations reported here were carried out on iron, nickel, and cobalt.

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

Science.gov (United States)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

Analysis of the formation of Ta2O5 passive films in acid media through mechanistic modeling

International Nuclear Information System (INIS)

Cabrera-Sierra, R.; Vazquez-Arenas, J.; Cardoso, S.; Luna-Sanchez, R.M.; Trejo, M.A.; Marin-Cruz, J.; Hallen, J.M.

2011-01-01

Electrochemical impedance spectroscopy (EIS) analyses are carried out to evaluate the passive features of tantalum oxide films (Ta 2 O 5 ) formed at different potentiostatic conditions (0.5, 1.0, 1.5 and 2.0 V vs SSE). A supporting electrolyte of 0.1 M H 2 SO 4 (pH 1) has been used to emulate acidic corrosive conditions for the growth of films with an n-type electronic character. A modification of the point defect model (PDM) accounting for the formation of molecular hydrogen (blistering damage) is used to fit the experimental EIS diagrams, and obtain the kinetic parameters that best describe the semiconductive behavior of the passive films. After this analysis, diffusivities in the order of 5.37 ± 1.6 x 10 -17 and 1.98 ± 1.4 x 10 -20 cm 2 s -1 were obtained for the oxygen (D VO·· ) and hydroxyl vacancies (D VOH· ), respectively. These findings show the capabilities of the EIS and the physicochemical modeling to account for the formation of valve-metal oxide films on a different range of conditions.

The protective nature of passivation films on zinc: surface charge

International Nuclear Information System (INIS)

Muster, Tim H.; Cole, Ivan S.

2004-01-01

The influence of oxide surface charge on the corrosion performance of zinc metals was investigated. Oxidised zinc species (zinc oxide, zinc hydroxychloride, zinc hydroxysulfate and zinc hydroxycarbonate) with chemical compositions similar to those produced on zinc during atmospheric corrosion were formed as particles from aqueous solution, and as passive films deposited onto zinc powder, and rolled zinc, surfaces. Synthesized oxides were characterised by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and electron probe X-ray microanalysis. The zeta potentials of various oxide particles, as determined by microelectrophoresis, are reported as a function of pH. Particulates containing a majority of zinc hydroxycarbonate and zinc hydroxysulfate crystallites were found to possess a negative surface charge below pH 6, whilst zinc oxide-hydroxide and zinc hydroxychloride crystallites possessed isoelectric points (IEP's) higher than pH 8. The ability of chloride species to pass through a bed of 3 μm diameter zinc powder was found to increase for surfaces possessing carboxy and sulfate surface species, suggesting that negatively charged surfaces can aid in the repulsion of chloride ions. Electrochemical analysis of the open-circuit potential as a function of time at a fixed pH of 6.5 showed that the chemical composition of passive films on zinc plates influenced the ability of chloride ions to access anodic sites for periods of approximately 1 h

The passive oxide films growth on 316L stainless steel in borate buffer solution measured by real-time spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Xu, Haisong; Wang, Lu; Sun, Dongbai [National Center for Materials Service Safety (NCMS), University of Science and Technology Beijing, Beijing 100083 (China); Yu, Hongying, E-mail: hyyu@ustb.edu.cn [Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China)

2015-10-01

Highlights: • The optical properties of passive oxide films on 316L stainless steel were studied. • The thickness of the oxide films (1.5–2.6 nm) increased linearly with the potentials. • The growth of passive film followed high electric field ion conduction model. • Selective solubility of oxide induced compositional change of passive film. - Abstract: Passive film growth on 316L stainless steel was investigated in borate buffer electrolyte (pH = 9.1) by real-time spectroscopic ellipsometry (SE) and the composition was estimated by X-ray photoelectron spectroscopy (XPS). Anodic passivation of 316L SS was carried out in the potential range from 0 V{sub SCE} to 0.9 V{sub SCE}, after potentiostatic polarization for 1800s, the current density decayed from 10{sup −2} A cm{sup −2} to 10{sup −6} A cm{sup −2}. The passive film thickness was simulated from Frenel and Drude reflection equations, the average complex refractive index was assumed to be N = 2.3 − j0.445. The estimated thickness increased linearly with potential from 1.5 nm at 0 V to 2.6 nm at 0.8 V. The growth of passive film followed high electric field ion conduction model. The passive film mainly contained the oxide/hydroxide of iron and chromium. The selective solubility of oxide in passive film explained the change of iron and chromium content at different potentials. Few nickel and molybdenum also contributed to the passive film with a constant content.

Electrochemical dissolution of fresh and passivated chalcopyrite electrodes. Effect of pyrite on the reduction of Fe3+ ions and transport processes within the passive film

International Nuclear Information System (INIS)

Olvera, O.G.; Quiroz, L.; Dixon, D.G.; Asselin, E.

2014-01-01

Graphical abstract: - Highlights: • FeS 2 increased the dissolution rate of fresh and passivated CuFeS 2 electrodes. • Fe 3+ reduction was the rate controlling step in the dissolution of fresh CuFeS 2 . • Diffusion within the passive film controlled the dissolution rate of passivated CuFeS 2 . - Abstract: The effect of pyrite (FeS 2 ) on the electrochemical dissolution of fresh and passivated chalcopyrite (CuFeS 2 ) electrodes has been studied. Current density values for the dissolution of CuFeS 2 were calculated from EIS measurements. FeS 2 increased the dissolution rate of fresh and passivated CuFeS 2 electrodes indicating that the galvanic effect continued even after the electrode was chemically passivated. The dissolution rate of CuFeS 2 decreased by a factor of 3 after the passivation treatment. Due to the low diffusion rates of ions within the CuFeS 2 passive film and due to an increase in the resistance to the transfer of electrons at the electrode/film interface, the activity of FeS 2 for the reduction of Fe 3+ ions was also reduced by a factor of 2.3 even though FeS 2 was not exposed to any chemical treatment. The results in this work indicate that the dissolution rate of the fresh CuFeS 2 electrode was controlled by the reduction of Fe 3+ ions whereas for the passivated CuFeS 2 electrode the dissolution rate was controlled by diffusion within the passive film

The corrosion and passivity of sputtered Mg–Ti alloys

International Nuclear Information System (INIS)

Song, Guang-Ling; Unocic, Kinga A.; Meyer, Harry; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

2016-01-01

Highlights: • A supersaturated single phase Mg–Ti alloy can be obtained by magnetron sputtering. • The anodic dissolution of Mg–Ti alloy is inhibited by Ti addition. • The alloy becomes passive when Ti content is high and the alloy has become Ti based. • The formation of a continuous thin passive film is responsible for the passivation of the alloy. - Abstract: This study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. The surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

Directory of Open Access Journals (Sweden)

Ching-Tao Li

2014-01-01

Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

Structure and photoluminescence of Mn-passivated nanocrystalline ZnO:S thin films

International Nuclear Information System (INIS)

Tong, Y.H.; Tang, Q.X.; Liu, Y.C.; Shao, C.L.; Xu, C.S.; Liu, Y.X.

2005-01-01

Mn-passivated nanocrystalline ZnO:S thin films were fabricated by thermally oxidizing Mn-doped ZnS (ZnS:Mn) films prepared by electron beam evaporation. Mn was introduced to passivate the surface defects of ZnO and to improve the optical properties. X-ray diffraction (XRD) and photoluminescence (PL) spectra at 81.9 K indicated the S content in ZnO thin film gradually decreased with increasing annealing temperature. The fitted result of the temperature-dependent PL spectra in the range from 81.9 to 302.2 K showed that S dopant could broaden the optical band gap energy of ZnO. Room temperature PL spectra confirmed that the ultraviolet peak shifted to lower energy with the decrease of S content in the thin film because of the Burstein-Moss effect

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

International Nuclear Information System (INIS)

Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

2011-01-01

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

Passivation of metals in thionyl-chloride electrolytes for lithium batteries: Summary abstract

Science.gov (United States)

Peebles, D. E.; Rogers, J. W., Jr.; Cieslak, W. R.; Delnick, F. M.

1986-10-01

Electrochemical methods have indicated that Ni and SS form passive films in SOCl2 electrolytes. The presence of a passive film has been verified by XPS, while the content of the films confirms that they were formed in situ, not prior to immersion in the electrolyte. In contrast, the electrochemical experiments have shown that both Pt and Mo behave kinetically as film-free inert electrodes, a result which has been confirmed by XPS.

Passivation of metals in thionyl-chloride electrolytes for lithium batteries. Summary abstract

Energy Technology Data Exchange (ETDEWEB)

Peebles, D.E.; Rogers, J.W. Jr.; Cieslak, W.R.; Delnick, F.M.

1986-01-01

Electrochemical methods have indicated that Ni and SS form passive films in SOCl/sub 2/ electrolytes. The presence of a passive film has been verified by XPS, while the content of the films confirms that they were formed in situ, not prior to immersion in the electrolyte. In contrast, the electrochemical experiments have shown that both Pt and Mo behave kinetically as film-free inert electrodes, a result which has been confirmed by XPS.

Hydrogen passivation of polycrystalline Si thin film solar cells

International Nuclear Information System (INIS)

Gorka, Benjamin

2010-01-01

Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V OC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V brk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V brk . Plasma simulations were carried out, which indicate that best V OC corresponds to a minimum in ion energy. V OC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the V OC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V OC , which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T dep =200-700 C and were characterized by Raman, ESR and V OC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.10 16 cm -3 after passivation was

Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

International Nuclear Information System (INIS)

Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

2015-01-01

The Al 2 O 3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H 2 O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D 2 O instead of H 2 O in the ALD and found that the Al 2 O 3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH 3 groups than the high-temperature film. This CH 3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H 2 O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H 2 O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D 2 O-oxidant ALD but found that the mass density and dielectric constant of D 2 O-grown Al 2 O 3 films are smaller than those of H 2 O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al 2 O 3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD

Investigation of passivating films on Li-electrode by the method of photoelectronic emission

International Nuclear Information System (INIS)

Nimon, E.S.; Churikov, A.V.; Gamayunova, I.M.; L'vov, A.L.

1995-01-01

Spectral dependences of photoeffect under conditions of pulsed illumination by visible and near IR radiation of Li-electrode surface in propylene carbonate and thionyl chloride base solutions have been studied. Photoemission of electrons from lithium to passivating films on its surface is the primary stage of the cathode photoeffect detected. The method of electron photoemission is used to obtain information on the composition and characteristics of the passivating films. 21 refs., 7 figs., 1 tab

Ultrathin protective films of two-dimensional polymers on passivated iron against corrosion in 0.1M NaCl

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2005-01-01

Prevention of iron corrosion in an aerated 0.1M NaCl solution was investigated by polarization and mass-loss measurements of a passivated iron electrode covered with ultrathin and ordered films of two-dimensional polymers. The films were prepared on the passivated electrode by modification of a 16-hydroxyhexadecanoate ion HO(CH 2 ) 15 CO 2 - self-assembled monolayer with 1,2-bis(triethoxysilyl)ethane (C 2 H 5 O) 3 Si(CH 2 ) 2 Si(OC 2 H 5 ) 3 and alkyltriethoxysilane C n H 2n+1 Si(OC 2 H 5 ) 3 (n=8 or 18). Because crevice corrosion occurred at the initial stage of immersion in the solution preferentially, the edge of electrode covered with the polymer film was coated with epoxy resin. The open-circuit potentials of the covered electrodes in the solution were maintained high, more than -0.2V/SCE for several hours, indicating that no breakdown of the passive film occurred on the surface. The protective efficiencies of the films were extremely high, more than 99.9% unless the passive film was broken down. The efficiencies after immersion for 24h almost agreed with those obtained by mass-loss measurements. X-ray photoelectron spectroscopy and electron-probe microanalysis of the passivated surface covered with the polymer film after immersion in the solution for 4h revealed that pit initiation on the passive film was suppressed by coverage with the polymer film completely

Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

International Nuclear Information System (INIS)

Hai-Qing, Xiao; Chun-Lan, Zhou; Xiao-Ning, Cao; Wen-Jing, Wang; Lei, Zhao; Hai-Ling, Li; Hong-Wei, Diao

2009-01-01

Al 2 O 3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 10 12 cm −2 is detected in the Al 2 O 3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO 2 and plasma enhanced chemical vapor deposition SiN x :H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al 2 O 3 . (cross-disciplinary physics and related areas of science and technology)

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

International Nuclear Information System (INIS)

Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

2013-01-01

Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Passivation Of High-Temperature Superconductors

Science.gov (United States)

Vasquez, Richard P.

1991-01-01

Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

Passivation behavior of a ferritic stainless steel in concentrated alkaline solutions

Directory of Open Access Journals (Sweden)

Arash Fattah-alhosseini

2015-10-01

Full Text Available The passivation behavior of AISI 430 ferritic stainless steel was investigated in concentrated alkaline solutions in relation to several test parameters, using electrochemical techniques. Increasing solution pH (varying from 11.5 to 14.0 leads to an increase in the corrosion rate of the alloy. Mott–Schottky analysis revealed that passive films formed on AISI 430 ferritic stainless steel behave as n-type semiconductor and the donor densities increased with pH. Electrochemical impedance spectroscopy (EIS results showed that the reciprocal capacitance of the passive film is directly proportional to its thickness, which decreases with pH increase. The results revealed that for this ferritic stainless steel in concentrated alkaline solutions, decreasing the solution pH offers better conditions for forming passive films with higher protection behavior, due to the growth of a much thicker and less defective film.

Hydrogen passivation of polycrystalline Si thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Gorka, Benjamin

2010-12-15

Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

[Oral films as perspective dosage form].

Science.gov (United States)

Walicová, Veronika; Gajdziok, Jan

Oral films, namely buccal mucoadhesive films and orodispersible films represent innovative formulations for administration of a wide range of drugs. Oral films show many advantageous properties and are intended for systemic drug delivery or for local treatment of the oral mucosa. In both cases, the film represents a thin layer, which could be intended to adhere to the oral mucosa by means of mucoadhesion; or to rapid dissolution and subsequent swallowing without the need of liquid intake, in the case of orodispersible films. Main constitutive excipients are film-forming polymers, which must in the case of mucoadhesive forms remain on the mucosa within the required time interval. Oral films are currently available on the pharmaceutical market and could compete with conventional oral dosage forms in the future. oral cavity oral films buccal mucoadhesive films orodispersible films film-forming polymers.

Morphology, chemical composition , and electrochemical characteristics of colored titanium passive layers

International Nuclear Information System (INIS)

Jerkiewicz, G.; Hrapovic, S.; Vatankhah, G.; Luan, B.L.

1999-01-01

Brightly and uniformly colored passive layers on Ti are formed by application of AC polarization in aqueous NH 4 BF 4 . A wide spectrum of well-defined colors is accomplished by varying the AC voltage. The passive films are stable in the ambient and in aqueous chloride, perchlorate, sulfate solutions. Optical microscopy and SEM analyses indicate that the passive layers are compact and do not reveal fractures or cracks. XPS characterization of the colored passive layers reveals that their surface-chemical composition depends on the AC polarization voltage. The main constituents of the passive layers are Ti z+ , O 2- , and F - (z varies from 4 to 2 depending on the depth). Fluoride in the film originates form decomposition of NH 4 BF 4 and it accumulates at the inner metal/passive-film interface. XPS depth profiling shows that the higher the AC voltage applied, the thicker the passive film formed. Electrochemical properties of the colored Ti passive layers are determined by recording polarization curves in the -0.8 - 3.2 V, RHE, range and Tafel plots in the hydrogen evolution reaction (HER) region in 1.0 M aqueous H 2 SO 4 solution. The polarization curves show that the corrosion potential of the colored passive layers shifts towards less-negative potential indicating that they are more stable than Ti under the same conditions. The Tafel plots for the HER demonstrate that the passive layers have much higher activity than Ti towards the HER. The Tafel relations reveal new features that can be associated with the partial breakdown/decomposition of the passive layers and with H absorption. (author)

Complete protection of a passive film on iron from breakdown in a borate buffer containing 0.1M of Cl- by coverage with an ultrathin film of two-dimensional polymer

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2006-01-01

An ultrathin film of two-dimensional polymer was prepared on a passivated iron electrode by modification of a 16-hydroxyhexadecanoate ion HO(CH 2 ) 15 CO 2 - self-assembled monolayer with 1,2-bis(triethoxysilyl)ethane (C 2 H 5 O) 3 Si(CH 2 ) 2 Si(OC 2 H 5 ) 3 and octadecyltriethoxysilane C 18 H 37 Si(OC 2 H 5 ) 3 . This film prevented passive film breakdown examined by potentiodynamic anodic polarization of the coated electrode in the borate buffer solution containing 0.1M of Cl - . Neither current spikes nor the pitting potential was observed in the passive and transpassive regions of polarization curve. The anodic current density was decreased in these regions markedly, implying hindrance to permeation of Cl - and water through the film. Structure of the film was clarified by X-ray photoelectron and FTIR reflection spectroscopies and contact angle measurement with a drop of water. Electron-probe microanalysis of the passivated surface coated with the film after anodic polarization scanning up to the transpassive region revealed that the polymer film prevents pit initiation by an attack on the passive film with Cl -

Analysis of the formation of Ta{sub 2}O{sub 5} passive films in acid media through mechanistic modeling

Energy Technology Data Exchange (ETDEWEB)

Cabrera-Sierra, R., E-mail: roma_ipn@yahoo.com [Instituto Politecnico Nacional, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Departamento de Ingenieria Quimica Industrial, UPALM Ed. 7, 1er. Piso CP 07738, D.F. (Mexico); Vazquez-Arenas, J. [Chemical Engineering Department, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G (Canada); Cardoso, S. [Instituto Politecnico Nacional, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Departamento de Ingenieria Quimica Industrial, UPALM Ed. 7, 1er. Piso CP 07738, D.F. (Mexico); Luna-Sanchez, R.M. [Universidad Autonoma Metropolitana-Azcapotzalco, Departamento de Energia, Av. San Pablo No. 180, Col. Reynosa Tamaulipas, CP 02200, D.F. (Mexico); Trejo, M.A. [Instituto Politecnico Nacional, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Departamento de Ingenieria Quimica Industrial, UPALM Ed. 7, 1er. Piso CP 07738, D.F. (Mexico); Marin-Cruz, J. [Instituto Mexicano del Petroleo, Coordinacion de Ingenieria Molecular, Competencia de Quimica Aplicada. Eje Central Lazaro Cardenas Norte 152, CP 07730, D.F. (Mexico); Hallen, J.M. [Instituto Politecnico Nacional, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Departamento de Ingenieria Quimica Industrial, UPALM Ed. 7, 1er. Piso CP 07738, D.F. (Mexico)

2011-09-30

Electrochemical impedance spectroscopy (EIS) analyses are carried out to evaluate the passive features of tantalum oxide films (Ta{sub 2}O{sub 5}) formed at different potentiostatic conditions (0.5, 1.0, 1.5 and 2.0 V vs SSE). A supporting electrolyte of 0.1 M H{sub 2}SO{sub 4} (pH 1) has been used to emulate acidic corrosive conditions for the growth of films with an n-type electronic character. A modification of the point defect model (PDM) accounting for the formation of molecular hydrogen (blistering damage) is used to fit the experimental EIS diagrams, and obtain the kinetic parameters that best describe the semiconductive behavior of the passive films. After this analysis, diffusivities in the order of 5.37 {+-} 1.6 x 10{sup -17} and 1.98 {+-} 1.4 x 10{sup -20} cm{sup 2} s{sup -1} were obtained for the oxygen (D{sub VO}{center_dot}{center_dot}) and hydroxyl vacancies (D{sub VOH}{center_dot}), respectively. These findings show the capabilities of the EIS and the physicochemical modeling to account for the formation of valve-metal oxide films on a different range of conditions.

Passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains with embedded nano-twin bundles

International Nuclear Information System (INIS)

Li, Tianshu; Liu, Li; Zhang, Bin; Li, Ying; Yan, Fengkai; Tao, Nairong; Wang, Fuhui

2014-01-01

Highlights: • Nanometer-grains (NG) and bundles of nano-twins (NT) is synthesized in 316L. • (NG + NT) and NT enhance the concentration of active Fe Fe in the passive film. • (NG + NT) and NT enhance the passive ability. • A Cr 0 -enriched layer forms at the passive film/metal interface. - Abstract: The passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains (NG) and nano-twin bundles (NT) are investigated. The electrochemical results indicate that the spontaneous passivation ability and growth rate of passive film are improved. The X-ray photoelectron spectroscopy (XPS) shows that a Cr 0 -enriched layer forms at the passive film/metal interface. More nucleation sites afforded by the nanostructures and the enhanced diffusion rate of charged species across the passive film are believed to be responsible for the improved passive ability. The PDM model is introduced to elaborate the microscopic process of passivation

Incorporation mechanism for doping of metal ions into a passivating film at the lithium/thionyl chloride interface

Science.gov (United States)

Danilov, V. G.; Shikin, V. I.

1993-05-01

Effects of iron and titanium ions on corrosion processes of lithium in thionyl chloride electrolytes have been studied. Laws for the growth of the passivating film on the type and concentration of doped ions have been established, and equations for these are suggested. A stepwise mechanism of dopant incorporation into passivating film structure is presented.

Passivity of 316L stainless steel in borate buffer solution studied by Mott-Schottky analysis, atomic absorption spectrometry and X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Feng Zhicao; Cheng Xuequn; Dong Chaofang; Xu Lin; Li Xiaogang

2010-01-01

Research highlights: → The polarization curve of 316L SS possesses five turning potentials in passive region. → Films formed at turning potentials perform different electrochemical and semiconductor properties. → Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. → Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V SCE , 0.2 V SCE , 0.4 V SCE , 0.6 V SCE and 0.85 V SCE ). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. Further, the compositions of the passive films formed at turning potentials are investigated. The results reasonably explain why these potentials appear in the passive region and why specimens perform different properties at turning potentials.

Incorporation mechanism for doping of metal ions into a passive film at the lithium/thionyl chloride interface

Energy Technology Data Exchange (ETDEWEB)

Danilov, V.G. (Siberian Inst. of Tech., Krasnoyarsk (Russian Federation). Lab. of Electrochemistry); Shilkin, V.I. (Siberian Inst. of Tech., Krasnoyarsk (Russian Federation). Lab. of Electrochemistry)

1993-05-01

Effects of iron and titanium ions on corrosion processes of lithium in thionyl chloride electrolytes have been studied. Laws for the growth of the passivating film on the type and concentration of doped ions have been established, and equations for these are suggested. A stepwise mechanism of dopant incorporation into passivating film structure is presented. (orig.)

Fundamental studies of passivity and passivity breakdown

International Nuclear Information System (INIS)

Macdonald, D.D.; Urquidi-Macdonald, M.; Song, H.; Biaggio-Rocha, S.; Searson, P.

1991-11-01

This report summarizes the findings of our fundamental research program on passivity and passivity breakdown. During the past three and one half years in this program (including the three year incrementally-funded grant prior to the present grant), we developed and experimentally tested various physical models for the growth and breakdown of passive films on metal surfaces. These models belong to a general class termed ''point defects models'' (PDMs), in which the growth and breakdown of passive films are described in terms of the movement of anion and cation vacancies

Study on the CMP characteristics of a copper passivity layer formed by dipping in an oxidizer

International Nuclear Information System (INIS)

Choi, Youn-Ok; Lee, Woo-Sun; Choi, Gwon-Woo; Lee, Kang-Yeon; Kim, Nam-Oh

2011-01-01

Copper has been the material for ultra-large-scale integrated circuits owing to its excellent electromigration resistance and low electrical resistance. The polishing mechanism of metal chemical mechanical polishing (CMP) has been reported to be a repeated process of passive oxide layer formation through the use of on oxidizer and then the abrasion action of the slurry. However, because copper is softer and more sensitive to corrosion than tungsten, the slurry composition and the polishing mechanism during the copper CMP process may be more complicated. In a general Cu-CMP process, a mixture of an alumina-based slurry and an oxidizer in proper proportion is used in order to form a passive oxide layer such as CuO and CuO 2 . However, a conventional CMP process consumes an unnecessary amount of slurry to formed the passive layer. Therefore, in this paper, we propose a new method. The copper samples were oxidized by dipping in an oxidizer for an appropriate time to minimize the consumption of slurry before the CMP process. Then, we performed the CMP process. In order to compare the polishing characteristics of the copper thin film, we discuss the CMP removal rate and non-uniformity, as well as the microstructure of the surface and a layer cross-section based on a scanning.

A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing

Energy Technology Data Exchange (ETDEWEB)

St George, Tiffany [Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Department of Science, United States Coast Guard Academy, 27 Mohegan Ave., New London, CT 06320 (United States); Vlahos, Penny, E-mail: penny.vlahos@uconn.ed [Department of Chemistry, University of Connecticut, 55 Eagleville Road, Storrs, CT 06269 (United States); Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Harner, Tom [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada); Helm, Paul [Environmental Monitoring and Reporting Branch, Ontario Ministry of the Environment, 125 Resources Rd, Toronto, Ontario M9P 3V6 (Canada); Wilford, Bryony [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada)

2011-02-15

Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K{sub EVA-W} partition coefficients correlate well (r{sup 2} = 0.87) with Log K{sub OW} values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K{sub EVA-W} = 1.04 Log K{sub OW} + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. - Research highlights: Calibration and field testing of a thin-film passive sampler in marine systems. Ethylene vinyl acetate (EVA) is effective for a wide spectrum of organic compounds. EVA performs with high precision and reproducibility. EVA is effective in marine systems at environmentally relevant concentrations. EVA is recommended as a multi-media fugacity meter for environmental applications. - An ethylene vinyl acetate (EVA), thin-film passive sampler for the detection of organic compounds in marine environments is calibrated and field tested.

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

Directory of Open Access Journals (Sweden)

D. J. Winarski

2016-09-01

Full Text Available Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM, optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (∼10−2 Ω.cm in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal–oxide–semiconductor (CMOS devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

Science.gov (United States)

Winarski, D. J.; Anwand, W.; Wagner, A.; Saadatkia, P.; Selim, F. A.; Allen, M.; Wenner, B.; Leedy, K.; Allen, J.; Tetlak, S.; Look, D. C.

2016-09-01

Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (˜10-2 Ω .cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi, E-mail: kawarada@waseda.jp [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan)

2015-06-07

The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of

Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2014-01-01

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN x ) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH 3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN x /P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN x films. The outstanding results obtained imply that SiN x /P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment

International Nuclear Information System (INIS)

Ishizuka, S.; Kato, S.; Okamoto, Y.; Sakurai, T.; Akimoto, K.; Fujiwara, N.; Kobayashi, H.

2003-01-01

The effects of the passivation of defects in polycrystalline nitrogen-doped cuprous oxide (Cu 2 O) thin films with hydrogen or cyanide treatment were studied. In the photoluminescence (PL) measurements, although the emission was not observed before treatment, luminescence of Cu 2 O at around 680 nm was observed after each treatment. This improvement in the luminescence property may be due to the passivation of non-radiative recombination centers by H or CN. The hole carrier concentration increased from the order of 10 16 to 10 17 cm -3 with hydrogen or cyanide treatment. From these results, both the hydrogen and cyanide treatments were found to be very effective to passivate defects and improve the optical and electrical properties of polycrystalline Cu 2 O thin films. The thermal stability of the passivation effects by the cyanide treatment is, however, superior to that by the hydrogen treatment

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

Science.gov (United States)

Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

2017-04-01

In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

Characteristics of Film Formed on Alloy 600 and Alloy 690 in Water Containing lead

International Nuclear Information System (INIS)

Hwang Seong Sik; Lee, Deok Hyun; Kim, Hong Pyo; Kim, Joung Soo; Kim, Ju Yup

1999-01-01

Anodic polarization behaviors of Alloy 600 and Alloy 690 have been studied as a function of lead content in the solution of pH 4 and 10 at 90 .deg. C. As the amount of lead in the solution increased, critical current densities and passive current densities of Alloy 600 and Alloy 690 increased, while the breakdown potential of the alloys decreased. The high critical current density in the high lead solution was thought to come from the combination of an enhanced dissolution of constituents on the surface of the alloys by the lead and an anodic dissolution of metallic lead deposited on the surface of the specimens. The morphology of lead precipitated on the specimen after the anodic scan changed with the pH of solution: small irregular particles were precipitated on the surface of the specimen in the solution of pH 4, while the high density of regular sized particles was formed on it in the solution of pH 10.Pb was observed to enhance Cr depletion from the outer surface of Alloy 600 and Alloy 690 and also to increase the ratio of O 2- /OH - in the surface film formed in the high lead solution. The SCC resistance of Alloy 600 and Alloy 690 may have decreased due to the poor quality of the passive film formed and the enhanced oxygen evolution in the solution containing lead

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

Energy Technology Data Exchange (ETDEWEB)

Luo, Hong, E-mail: luohong@hhu.edu.cn [College of Mechanics and Materials, Hohai University, Nanjing 210098 (China); Su, Huaizhi [State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Hohai University, Nanjing 210098,China (China); Dong, Chaofang; Li, Xiaogang [Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083,China (China)

2017-04-01

Highlights: • The pH value play an important role on passive mechanism of stainless steel. • The relationship between Cr/Fe ratio within the passive film and pH is non-linear. • Better corrosion resistance due to high Cr/Fe ratio and molybdates ions. - Abstract: In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

International Nuclear Information System (INIS)

Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

2017-01-01

Highlights: • The pH value play an important role on passive mechanism of stainless steel. • The relationship between Cr/Fe ratio within the passive film and pH is non-linear. • Better corrosion resistance due to high Cr/Fe ratio and molybdates ions. - Abstract: In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2016-01-01

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

Science.gov (United States)

Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

2014-10-21

Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

High-Pressure Water-Vapor Annealing for Enhancement of a-Si:H Film Passivation of Silicon Surface

International Nuclear Information System (INIS)

Guo Chun-Lin; Wang Lei; Zhang Yan-Rong; Zhou Hai-Feng; Liang Feng; Yang Zhen-Hui; Yang De-Ren

2014-01-01

We investigate the effect of amorphous hydrogenated silicon (a-Si:H) films passivated on silicon surfaces based on high-pressure water-vapor annealing (HWA). The effective carrier lifetime of samples reaches the maximum value after 210°C, 90min HWA. Capacitance-voltage measurement reveals that the HWA not only greatly reduces the density of interface states (D it ), but also decreases the fixed charges (Q fixed ) mainly caused by bulk defects. The change of hydrogen and oxygen in the film is measured by a spectroscopic ellipsometer and a Fourier-transform infrared (FTIR) spectrometer. All these results show that HWA is a useful method to improve the passivation effect of a-Si:H films deposited on silicon surfaces

Prevention of passive film breakdown on iron in a borate buffer solution containing chloride ion by coverage with a self-assembled monolayer of hexadecanoate ion

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2003-01-01

Breakdown of a passive film on iron in a borate buffer solution (pH 8.49) containing 0.1 M of Cl - was suppressed by coverage of the passive film surface with a self-assembled monolayer (SAM) of hexadecanoate ion C 15 H 31 CO 2 - (C 16 A - ). The pitting potential of an iron electrode previously passivated in the borate buffer at 0.50 V/SCE increased by treatment in an aqueous solution of sodium hexadecanoate for many hours, indicating protection of the passive film from breakdown caused by an attack on defects of the film with Cl - . No breakdown occurred over the potential range of the passive region by coverage with the SAM of C 16 A - in some cases. Structures of the passive film and the monolayer were characterized by X-ray photoelectron and Fourier transform infrared reflection spectroscopies and contact angle measurement with a drop of water

Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

International Nuclear Information System (INIS)

Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

2012-01-01

Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

Electrochemical study of the AISI 409 ferritic stainless steel: passive film stability and pitting nucleation and growth

International Nuclear Information System (INIS)

Souza, Juliana Sarango de; Oliveira, Leandro Antônio de; Antunes, Renato Altobelli; Sayeg, Isaac Jamil

2017-01-01

The aim of the present work was to study the passive film stability and pitting corrosion behavior of the AISI 409 stainless steel. The electrochemical tests were carried out in 0.1 M NaCl solution at room temperature. The general electrochemical behavior was assessed using electrochemical impedance spectroscopy (EIS) measurements whereas the semiconducting properties of the passive film were evaluated by the Mott-Schottky approach. Pitting corrosion was investigated using potentiodynamic and potentiostatic polarization tests. Surface morphology was examined using confocal laser scanning microscopy and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDS) analyses were carried out to identify the composition of precipitates that could act as preferential sites for the onset of pitting corrosion. The results showed that the passive film presents n-type semiconductive behavior. Grain boundaries played an important role as pitting initiation sites for the AISI 409 stainless steel. (author)

Electrochemical study of the AISI 409 ferritic stainless steel: passive film stability and pitting nucleation and growth

Energy Technology Data Exchange (ETDEWEB)

Souza, Juliana Sarango de [Universidade Federal de São Paulo (UNIFESP), Diadema, SP (Brazil). Departamento de Ciências Exatas e da Terra; Oliveira, Leandro Antônio de; Antunes, Renato Altobelli, E-mail: renato.antunes@ufabc.edu.br [Universidade Federal do ABC (CECS/UFABC), Santo André, SP (Brazil). Centro de Engenharia, Modelagem e Ciências Sociais Aplicadas; Sayeg, Isaac Jamil [Universidade de São Paulo (USP), SP (Brazil). Instituto de Geociências

2017-11-15

The aim of the present work was to study the passive film stability and pitting corrosion behavior of the AISI 409 stainless steel. The electrochemical tests were carried out in 0.1 M NaCl solution at room temperature. The general electrochemical behavior was assessed using electrochemical impedance spectroscopy (EIS) measurements whereas the semiconducting properties of the passive film were evaluated by the Mott-Schottky approach. Pitting corrosion was investigated using potentiodynamic and potentiostatic polarization tests. Surface morphology was examined using confocal laser scanning microscopy and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDS) analyses were carried out to identify the composition of precipitates that could act as preferential sites for the onset of pitting corrosion. The results showed that the passive film presents n-type semiconductive behavior. Grain boundaries played an important role as pitting initiation sites for the AISI 409 stainless steel. (author)

In situ micro Raman spectroscopy for characterization of oxide film formed on the new surface and for measurements of the stress of oxide film formed on 304L stainless steel

Energy Technology Data Exchange (ETDEWEB)

Kai, A.; Takegoshi, M.; Shoji, T. [Fracture Research Inst., Tohoku Univ., Sendai (Japan)

2004-07-01

Environmentally assisted cracking (EAC) consists of two distinct events viz., i) crack initiation and ii) crack propagation. On a smooth surface, the EAC initiates by the rupture or by the degradation of the surface film due to the combined action of stress and an electrochemical reaction of the materials with the environment. The mechanical properties of the surface oxide films are also important considerations when determining the susceptibility to EAC. In this research, Micro Raman Spectroscopy (MRS) was applied for in-situ oxides characterization and for in-situ measurements of the stress in oxide film formed on the surface of 304L stainless steel during the scratching electrode and the slow strain rate test (SSRT), respectively. The passive oxide film growth formed on the bare surface was continuously monitored by MRS as a function of time. For stress measurements, Cr{sub 2}O{sub 3} was focused on and raman shift at Cr{sub 2}O{sub 3} peak of Raman spectrum was measured continuously. The strain rate was 8.2 x 10{sup -7}/sec. In the initial stage of SSRT, the Raman shift of surface film decreased gradually with strain. At 5% strain, the Raman shift of surface film increased rapidly to around the initial value of Raman shift. It is considered that the surface film was ruptured at this time. At 5% strain, the shift value of Raman peak of Cr{sub 2}O{sub 3} reached to 5 cm{sup -1}. This value (5 cm{sup -1}) corresponds to 1.2 GPa which value of tensile stress is calculated from reference data. These characteristics of oxide film will be implemented into the theoretical formulation of EAC and their implication to EAC growth rate will be discussed. (orig.)

HTS thin films: Passive microwave components and systems integration issues

International Nuclear Information System (INIS)

Miranda, F.A.; Chorey, C.M.; Bhasin, K.B.

1994-01-01

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory's High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

Science.gov (United States)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

Science.gov (United States)

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Modification and application of water film model in COCOSYS for PWR's passive containment cooling

International Nuclear Information System (INIS)

Huang, Xi; Cheng, Xu

2014-01-01

Highlights: • Water film model in COCOSYS has been modified by considering film breakup. • Shear stress on film surface created by countercurrent flow has been considered. • Formation and development of rivulets have been taken into account. • Modified model has been applied for passive containment cooling system. • The modified water film model has optimized the simulation results. - Abstract: In this paper the physical model describing water film behaviors in German containment code system COCOSYS has been modified by taking into consideration the film breakup and subsequent phenomena as well as the effect of film interfacial shear stress created by countercurrent air flow. The modified model has extended its capability to predict particular water film behaviors including breakup at a critical film thickness based on minimum total energy criterion, the formation of rivulets according to total energy equilibrium as well as subsequent performance of rivulets according to several assumptions and observations from experiments. Furthermore, the modification considers also the change of velocity distribution on the cross section of film/rivulets due to shear stress. Based on the geometry of AP1000 and Generic Containment, simulations predicting containment pressure variation during accidents with operation of passive containment cooling system have been carried out. With the new model, considerably larger peak pressures are observed by comparing with those predicted with original water film model within a certain range of water film flow rate. Sensitivity analyses also point out that contact angle between water rivulets and steel substrate plays a significant role in the film cooling

Passivation behavior of SUS 304 stainless steel in neutral solutions at elevated temperature

International Nuclear Information System (INIS)

Tanno, Kazuo; Kato, Koji; Ohnaka, Noriyuki; Okajima, Yoshiaki; Minato, Akira.

1981-01-01

Cyclic voltammograms of SUS 304 stainless steel in various neutral solutions such as Na 2 SO 4 at high temperature were measured, as a successive study to previous report in which effects of temperature and pH on polarization behavior of stainless steel were studied. In this measurement Ag/AgCl reference electrode and platinum counter electrode were used in a static autoclave lined with inconel. Passive films formed in various conditions were analysed by electron diffraction and Auger spectroscopy. Results obtained were compared with anodic behavior of iron, chromium and nickel and with thermodynamical stabilities of their compounds. The main results are summarized as follows. (1) Stainless steel shows such electrochemical behavior as active dissolution, passivation and transpassivation in a deaerated neutral solution at 250 0 C after fully reductive treatment of the specimen. In air-saturated solution, the peak of active dissolution is not observed. In the passive range there are intermediate oxidation and reduction peaks, and it is assumed that dissolved ionic species are oxidized to form oxide of spinel type and higher oxidized state successively at these peaks. (2) Electrochemical behavior of specimens in 0.1 M sulfate, -phosphate and -carbonate solutions are almost the same and rather thick films form in these solutions. On the other hand, specimens are easy to passivate in borate and -nitrate solution, and their passive films are thin. (author)

Effect of the niobium additions in the passive films potentiostatically grown in a sulphate medium

International Nuclear Information System (INIS)

Kuri, S.E.; Martins, M.; D'Alkaine, C.V.

1984-01-01

The stability of passive films potentiostatically grown on stainless steel electrodes was studied in a 2 N sulfuric acid. The effect of Niobium contents in the base metal was considered. The reactivation time was measured using the method of Potential Decay Measurements under Open-Circuit Conditions after electrochemical aging in the passivity region, and its influence on the surface oxidation states, was discussed. (Author) [pt

Investigation of the passive behaviour of AZ31B alloy in alkaline solutions

Directory of Open Access Journals (Sweden)

A. Fattah-alhosseini

2014-06-01

Full Text Available In this work, the passivity of AZ31B alloy in NaOH solutions was studied by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS and Mott–Schottky analysis. Potentiodynamic polarization results indicated that decreasing NaOH concentration leads to decrease the corrosion rate of this alloy. EIS results showed that the reciprocal capacitance (1/C of the passive film is directly proportional to its thickness which increases with decreasing NaOH concentration. Therefore, it is clear that dilute NaOH solutions offer better conditions for forming the passive films with higher protection behaviour, due to the growth of a much thicker and less defective films. The Mott–Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics, where the oxygen vacancies and interstitials (over the cation vacancies preponderated. Also, Mott–Schottky results showed that the donor densities evaluated from Mott–Schottky plots are in the range of 1020 cm−3 and decreased with decreasing NaOH concentration.

Use of color-change indicators to quantify passive films on the stainless steel valves of nuclear power plants

Energy Technology Data Exchange (ETDEWEB)

Cheng, Cong Qian [School of Materials Science, Engineering, Dalian University of Technology, Dalian 116085 (China); Yang, Shu Kai [School of Materials Science, Engineering, Dalian University of Technology, Dalian 116085 (China); Suzhou Nuclear Power Research Institute, Suzhou 215004 (China); Zhao, Jie, E-mail: jiezhao@dlut.edu.cn [School of Materials Science, Engineering, Dalian University of Technology, Dalian 116085 (China)

2016-02-15

Highlights: • A facile method to evaluate passivation quality by color change indicator. • Two indicators were compared in lab and applied on vales in nuclear power plants. • It shows that the higher value of color change the worse quality of passivation. • Traditional ferroxyl solution is unstable and might impair the vale surface. • The new indicator is more practicable than the ferroxyl test for on-site inspection. - Abstract: The passive film on nuclear-grade stainless steels was evaluated by quantifying its color changes. Coloration reactions were compared by using ferroin and blue dot solutions as indicators on the basis of the measured results in a laboratory. The reactions were then applied on stainless steel valves in a nuclear power plant. The degree of color change indicates the degree of growth of a passive film. The ferroin solution exhibits higher accuracy and more stable than blue dot solution in determining passive film quality. The potentiodynamic polarization curves show that blue dot solution might cause surface damage compared with ferroin solution. The inspection result on stainless steel valves supports our laboratory result. However, stainless steel exhibited a dramatic decrease in sensitivity to blue dot because of the intrinsic instability and high acidity of this solution. Ferroin solution is superior to blue dot solution for stainless steel facilities in a nuclear power plant.

Passivation of high temperature superconductors

Science.gov (United States)

Vasquez, Richard P. (Inventor)

1991-01-01

The surface of high temperature superconductors such as YBa2Cu3O(7-x) are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10(exp -3) M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

Mesoscale Elucidation of Surface Passivation in the Li-Sulfur Battery Cathode.

Science.gov (United States)

Liu, Zhixiao; Mukherjee, Partha P

2017-02-15

The cathode surface passivation caused by Li 2 S precipitation adversely affects the performance of lithium-sulfur (Li-S) batteries. Li 2 S precipitation is a complicated mesoscale process involving adsorption, desorption and diffusion kinetics, which are affected profoundly by the reactant concentration and operating temperature. In this work, a mesoscale interfacial model is presented to study the growth of Li 2 S film on carbon cathode surface. Li 2 S film growth experiences nucleation, isolated Li 2 S island growth and island coalescence. The slow adsorption rate at small S 2- concentration inhibits the formation of nucleation seeds and the lateral growth of Li 2 S islands, which deters surface passivation. An appropriate operating temperature, especially in the medium-to-high temperature range, can also defer surface passivation. Fewer Li 2 S nucleation seeds form in such an operating temperature range, thereby facilitating heterogeneous growth and potentially inhibiting the lateral growth of the Li 2 S film, which may ultimately result in reduced surface passivation. The high specific surface area of the cathode microstructure is expected to mitigate the surface passivation.

Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

Energy Technology Data Exchange (ETDEWEB)

Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

2017-01-15

Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

Surface correlation behaviors of metal-organic Langmuir-Blodgett films on differently passivated Si(001) surfaces

Science.gov (United States)

Bal, J. K.; Kundu, Sarathi

2013-03-01

Langmuir-Blodgett films of standard amphiphilic molecules like nickel arachidate and cadmium arachidate are grown on wet chemically passivated hydrophilic (OH-Si), hydrophobic (H-Si), and hydrophilic plus hydrophobic (Br-Si) Si(001) surfaces. Top surface morphologies and height-difference correlation functions g(r) with in-plane separation (r) are obtained from the atomic force microscopy studies. Our studies show that deposited bilayer and trilayer films have self-affine correlation behavior irrespective of different passivations and different types of amphiphilic molecules, however, liquid like correlation coexists only for a small part of r, which is located near the cutoff length (1/κ) or little below the correlation length ξ obtained from the liquid like and self-affine fitting, respectively. Thus, length scale dependent surface correlation behavior is observed for both types of Langmuir-Blodgett films. Metal ion specific interactions (ionic, covalent, etc.,) in the headgroup and the nature of the terminated bond (polar, nonpolar, etc.,) of Si surface are mainly responsible for having different correlation parameters.

HTS thin films: Passive microwave components and systems integration issues

Energy Technology Data Exchange (ETDEWEB)

Miranda, F.A.; Chorey, C.M.; Bhasin, K.B. [National Aeronautics and Space Administration, Cleveland, OH (United States)

1994-12-31

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory`s High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects.

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

Science.gov (United States)

Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

2016-04-27

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH IGZO TFTs.

A XPS study of the Mo effect on passivation behaviors for highly controlled stainless steels in neutral and alkaline conditions

International Nuclear Information System (INIS)

Mesquita, Thiago J.; Chauveau, Eric; Mantel, Marc; Nogueira, Ricardo P.

2013-01-01

The objective of this work is to study the effect of Mo additions on film passive properties of three different stainless steels (SS) types (austenitic, ferritic and duplex alloys). A comparison between Mo containing (3 wt% Mo) and free Mo (0 wt% Mo) grades of highly controlled laboratory heats was done considering their passive film formed in different aggressive conditions, from neutral to alkaline pH. The presence of oxidized Mo on the passive layer was confirmed by X-ray photoelectron Spectroscopy (XPS). The presence of Mo within the passive film improved the passivity breakdown potential for the duplex and ferritic SS, but seemed to have no effect for austenitic SS.

A XPS study of the Mo effect on passivation behaviors for highly controlled stainless steels in neutral and alkaline conditions

Energy Technology Data Exchange (ETDEWEB)

Mesquita, Thiago J., E-mail: thiago.mesquita@ugitech.com [Ugitech Research Center, Avenue Paul Girod, 73403 Ugine Cedex (France); Chauveau, Eric; Mantel, Marc [Ugitech Research Center, Avenue Paul Girod, 73403 Ugine Cedex (France); Nogueira, Ricardo P. [LEPMI UMR 5279 CNRS – Grenoble INP–Université de Savoie–Université Joseph Fourier BP 75, 38402 St Martin d’Hères (France)

2013-04-01

The objective of this work is to study the effect of Mo additions on film passive properties of three different stainless steels (SS) types (austenitic, ferritic and duplex alloys). A comparison between Mo containing (3 wt% Mo) and free Mo (0 wt% Mo) grades of highly controlled laboratory heats was done considering their passive film formed in different aggressive conditions, from neutral to alkaline pH. The presence of oxidized Mo on the passive layer was confirmed by X-ray photoelectron Spectroscopy (XPS). The presence of Mo within the passive film improved the passivity breakdown potential for the duplex and ferritic SS, but seemed to have no effect for austenitic SS.

Stability and modification of passive films of new PUREX-materials

International Nuclear Information System (INIS)

Schultze, J.W.; Siemensmeyer, B.; Patzelt, T.

1991-10-01

The valve metals Ti, Zr and others and their alloys can be used in nitric acid solutions of the Purex process. They are protected by passive films which are stable at least at low temperatures and concentrations. Electrochemical investigations and corrosion tests are applied to check improvements of the materials. Niobium can be used to substitute the very expensive tantalum. Electrochemical and analytical investigations show the formation of the corrosion stable oxide film. Special problems are treated, such as the stability of welded joints or the influence of radioactive irradiation. α-radiation and hot atoms are simulated by ion implantation, β- and γ-radiation are simulated by laser light. In both types of experiments no decrease of stability is indicated. The alloy Ti5Ta is more stable than Ti, but it is not as good as Ta. Other alloys of Ti were investigated, but they are not suitable for the Purex process. New protection layers are tested. With respect to their preparation as well as their corrosion stability, ANOF-films are promising, but TiN-films are not stable enough. (orig.) With 71 refs., 7 tabs., 71 figs [de

Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

International Nuclear Information System (INIS)

Pincik, E.; Kobayashi, H.; Takahashi, M.; Fujiwara, N.; Brunner, R.; Gleskova, H.; Jergel, M.; Muellerova, J.; Kucera, M.; Falcony, C.; Ortega, L.; Rusnak, J.; Mikula, M.; Zahoran, M.; Jurani, R.; Kral, M.

2004-01-01

This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electrical properties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solar cells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solar cell multilayer structures was achieved which is of primary practical importance

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

Directory of Open Access Journals (Sweden)

Jung-Hoon Yu

2016-07-01

Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.

Effect of an electrolyte salt dissolving in polysiloxane-based electrolyte on passive film formation on a graphite electrode

Science.gov (United States)

Nakahara, Hiroshi; Nutt, Steven

Electrochemical impedance spectroscopy (EIS) was performed during the first charge of a graphite/lithium metal test cell to determine the effect of an electrolyte salt on passive film formation in a polysiloxane-based electrolyte. The graphite electrode was separated from the lithium metal electrode by a porous polyethylene membrane immersed in a polysiloxane-based electrolyte with the dissolved lithium bis(oxalato) borate (LiBOB) or lithium bis(trifluoromethanesulfonyl) imide (LiTFSI). In case of LiTFSI, the conductivity of system decreased at 1.2 V. In contrast, for the case of LiBOB, the conductivity decreased at 1.7 V. The magnitudes of charge transfer resistance and film resistance for LiTFSI were smaller than that for LiBOB. Passive films on highly oriented pyrolytic graphite (HOPG) after charging (lithiating) in polysiloxane-based electrolyte were inspected microscopically. Gel-like film and island-like films were observed for LiBOB [H. Nakahara, A. Masias, S.Y. Yoon, T. Koike, K. Takeya, Proceedings of the 41st Power Sources Conference, vol. 165, Philadelphia, June 14-17, 2004; H. Nakahara, S.Y. Yoon, T. Piao, S. Nutt, F. Mansfeld, J. Power Sources, in press; H. Nakahara, S.Y. Yoon, S. Nutt, J. Power Sources, in press]. However, for LiTFSI, there was sludge accumulation on the HOPG surface. Compositional analysis revealed the presence of silicon on both HOPG specimens with LiBOB and with LiTFSI. The electrolyte salt dissolved in the polysiloxane-based electrolyte changed the electrochemical and morphological nature of passive films on graphite electrode.

Triethyl orthoformate as a new film-forming electrolytes solvent for lithium-ion batteries with graphite anodes

International Nuclear Information System (INIS)

Wang Lishi; Huang Yudai; Jia Dianzeng

2006-01-01

Triethyl orthoformate (TEOF) as a new solvent used in propylene carbonate (PC)-based electrolytes together with graphitic anodes in lithium-ion batteries has been investigated. It can be observed that TEOF was capable of suppressing the co-intercalation of PC solvated lithium-ions into the graphite layer during the first lithiation process and the irreversible discharge capacity of the first cycle is the smallest when using 1.0 M LiPF 6 in PC and TEOF at solvent ratio of 1:1 as the electrolytes. The CV, FTIR, EIS, SEM results show that the PC-based electrolytes containing the solvent TEOF can generate an effective solid electrolytes interphase (SEI) film during the first cycling process, and the film is probably mainly composed of ROCO 2 Li, ROLi, Li 2 CO 3 , etc. The formation of a stable passivating film on the graphite surface is believed to be the reason for the improved cell performance. All these results show that TEOF possesses a promising performance for use as an effective film-forming electrolytes solvent in lithium-ion batteries with graphitic anodes

Passivation and alloying element retention in gas atomized powders

Science.gov (United States)

Heidloff, Andrew J.; Rieken, Joel R.; Anderson, Iver E.

2017-12-05

A method for gas atomization of a titanium alloy, nickel alloy, or other alumina (Al.sub.2O.sub.3)-forming alloy wherein the atomized particles are exposed as they solidify and cool in a very short time to multiple gaseous reactive agents for the in-situ formation of a passivation reaction film on the atomized particles wherein the reaction film retains a precursor halogen alloying element that is subsequently introduced into a microstructure formed by subsequent thermally processing of the atomized particles to improve oxidation resistance.

Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

International Nuclear Information System (INIS)

Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

2014-01-01

The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing.

Science.gov (United States)

St George, Tiffany; Vlahos, Penny; Harner, Tom; Helm, Paul; Wilford, Bryony

2011-02-01

Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K(EVA-W) partition coefficients correlate well (r(2) = 0.87) with Log K(OW) values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K(EVA-W) = 1.04 Log K(OW) + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. Published by Elsevier Ltd.

Thick film hydrogen sensor

Science.gov (United States)

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

A feasibility study using radiochromic films for fast neutron 2D passive dosimetry

International Nuclear Information System (INIS)

Brady, Samuel L; Fallin, Brent; Gunasingha, Rathnayaka; Yoshizumi, Terry T; Howell, Calvin R; Crowell, Alexander S; Tonchev, Anton P; Dewhirst, Mark W

2010-01-01

The objective of this paper is threefold: (1) to establish sensitivity of XRQA and EBT radiochromic films to fast neutron exposure; (2) to develop a film response to radiation dose calibration curve and (3) to investigate a two-dimensional (2D) film dosimetry technique for use in establishing an experimental setup for a radiobiological irradiation of mice and to assess the dose to the mice in this setup. The films were exposed to a 10 MeV neutron beam via the 2 H(d,n) 3 He reaction. The XRQA film response was a factor of 1.39 greater than EBT film response to the 10 MeV neutron beam when exposed to a neutron dose of 165 cGy. A film response-to-soft tissue dose calibration function was established over a range of 0-10 Gy and had a goodness of fit of 0.9926 with the calibration data. The 2D film dosimetry technique estimated the neutron dose to the mice by measuring the dose using a mouse phantom and by placing a piece of film on the exterior of the experimental mouse setup. The film results were benchmarked using Monte Carlo and aluminum (Al) foil activation measurements. The radiochromic film, Monte Carlo and Al foil dose measurements were strongly correlated, and the film within the mouse phantom agreed to better than 7% of the externally mounted films. These results demonstrated the potential application of radiochromic films for passive 2D neutron dosimetry.

Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

2017-04-01

Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

Designing new biocompatible glass-forming Ti75-x Zr10 Nbx Si15 (x = 0, 15) alloys: corrosion, passivity, and apatite formation.

Science.gov (United States)

Abdi, Somayeh; Oswald, Steffen; Gostin, Petre Flaviu; Helth, Arne; Sort, Jordi; Baró, Maria Dolors; Calin, Mariana; Schultz, Ludwig; Eckert, Jürgen; Gebert, Annett

2016-01-01

Glass-forming Ti-based alloys are considered as potential new materials for implant applications. Ti75 Zr10 Si15 and Ti60 Zr10 Nb15 Si15 alloys (free of cytotoxic elements) can be produced as melt-spun ribbons with glassy matrix and embedded single β-type nanocrystals. The corrosion and passivation behavior of these alloys in their homogenized melt-spun states have been investigated in Ringer solution at 37°C in comparison to their cast multiphase crystalline counterparts and to cp-Ti and β-type Ti-40Nb. All tested materials showed very low corrosion rates as expressed in corrosion current densities icorr  alloys passive states in a wide potential range. This corresponds to low passive current densities ipass  = 2 ± 1 µA/cm(2) based on the growth of oxide films with thickness d alloys is beneficial for stable surface passivity. The addition of Nb does not only improve the glass-forming ability and the mechanical properties but also supports a high pitting resistance even at extreme anodic polarization up to 4V versus SCE were oxide thickness values of d ∼35 nm are reached. With regard to the corrosion properties, the Nb-containing nearly single-phase glassy alloy can compete with the β-type Ti-40Nb alloy. SBF tests confirmed the ability for formation of hydroxyapatite on the melt-spun alloy surfaces. All these properties recommend the new glass-forming alloys for application as wear- and corrosion-resistant coating materials for implants. © 2015 Wiley Periodicals, Inc.

Passivation behaviour of stainless steel (UNS N-08028) in industrial or simplified phosphoric acid solutions at different temperatures

International Nuclear Information System (INIS)

Ben Salah, M.; Sabot, R.; Refait, Ph.; Liascukiene, I.; Méthivier, C.; Landoulsi, J.; Dhouibi, L.

2015-01-01

Highlights: • Industrial phosphoric acid is less aggressive than simulated industrial acid. • Polyphosphate film in Industrial acid is reinforced by calcium and sulfate. • Passive film thickness is obtained by the power law model from EIS measurements. • Passive film of Sanicro28 becomes more resistive towards corrosion with exposure time in industrial acid. • XPS measurements coupled to Raman spectroscopy reveal the corrosion products formed in simulated acid. - Abstract: The corrosion behaviour of Sanicro28, in industrial phosphoric acid and simplified solution of pure H_3PO_4 containing sulphates and chlorides, is investigated during 48 h between 20 and 80 °C. Results show higher corrosion resistance in the industrial medium. Film thickness evaluated by EIS remains constant in industrial acid due to polyphosphate that promotes crystallisation of the Cr_2O_3 inner layer. Conversely, the passive film is partially destroyed at 80 °C in simplified acid. XPS and Raman analysis show that phosphate and molybdenum are both present in the passive film and in corrosion products. The role of Ca present in the industrial acid is discussed.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Sodium hydroxide injection passivation work for the reactor water clean-up system in a new ABWR plant

International Nuclear Information System (INIS)

Wen, Tung-Jen; Lu, Ju-Huang

2012-09-01

Several studies have identified that Co-58 and Co-60 as the primary source of radiation build up on out-of-core components in new BWR plants. The deposition rate of Co on stainless steel and carbon steel is shown to be controlled mainly by the thickness of oxide films and its morphology formed through pretreatment. The passivation treatment was implemented accordingly at Lungmen unit 1 in an ABWR plant in September 2010. It is determined that the passivation conditions should be maintained at the temperature of 180∼230 deg. C, pH of 8.0∼8.5 and dissolved oxygen content over 400 ppb. The films would provide effective protection against radioactive deposition. The application of the pre-filming process on piping before the pre-operation is done during the flow induced vibration test (FIV) period. The protectiveness of stable magnetite can be increased by the pH control under the specific condition. The pre-filming control process and evaluation of passivation effectiveness is discussed in detail based on the surface analysis of the passivated specimens. Many efforts have been devoted to sodium hydroxide injection method for pH control of the system through the filter demineralizer under smooth operation. A comparison of test specimens on the properties of oxide film formed between laboratory and in-plant tests through alkaline treatment are also shown in this report. (authors)

Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

CERN Document Server

Sohn, M K; Kim, K H; Yang, S G; Seo, K S

1998-01-01

In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

Modelling of passive films: complementarity and applicability to the electrochemical impedance spectroscopy analysis

International Nuclear Information System (INIS)

Boissy, Clement; Normand, Bernard

2013-01-01

A review of the published models to describe the passivation of metallic materials is proposed. The objective is to illustrate the importance of the selection of a model considering their complementarity. The discussion is based on an analysis to assess whether the mass transport in the film must be taken into account or not in the modelling of the electrochemical impedance. (authors)

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

Science.gov (United States)

Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

2018-03-14

An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

In situ EC-AFM study of the effect of nanocrystals on the passivation and pit initiation in an Al-based metallic glass

International Nuclear Information System (INIS)

Zhang, S.D.; Liu, Z.W.; Wang, Z.M.; Wang, J.Q.

2014-01-01

Highlights: • The nanoscale corrosion on Al-rich glass was characterised by in situ EC-AFM. • The nanocrystals were identified from amorphous matrix by tapping mode AFM. • The formation of corrosion products is associated with the galvanic coupling. • The nanocrystals changed the local structure and component of the passive film. - Abstract: The effect of nanocrystals on pit initiation in metallic glasses is an unresolved issue. The passive film formation and pit initiation in the Al–Ni–Ce metallic glass were investigated using in situ electrochemical atomic force microscope (EC-AFM). The α-Al nanophases were identified from the amorphous matrix based upon the phase imaging in the tapping mode AFM. In the early stage of the passive film formation, the corrosion products Al(OH) 3 formed on the α-Al nanoparticles due to the galvanic coupling. The corrosion products incorporated into the passive film changed the local structure and component of the passive film, lowering its stability

Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Yamazaki, Haruka; Nonaka, Toshiaki; Fujii, Mami N.; Uraoka, Yukiharu

2015-07-01

We report the fabrication of a photosensitive hybrid passivation material on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) that greatly enhance its stability and improve its electrical characteristics. The hybrid passivation based on polysilsesquioxane is transparent and fabricated using a simple solution process. Because the passivation is photosensitive, dry etching was never performed during TFT fabrication. TFTs passivated with this material had a small threshold voltage shift of 0.5 V during positive bias stress, 0.5 V during negative bias stress, and -2.5 V during negative bias illumination stress. Furthermore, TFTs passivated by this layer were stable after being subjected to high relative humidity stress — confirming the superb barrier ability of the passivation. Analysis of secondary ion mass spectrometry showed that a large amount of hydrogen, carbon, and fluorine can be found in the channel region. We show that both hydrogen and fluorine reduced oxygen vacancies and that fluorine stabilized weak oxygen and hydroxide bonds. These results demonstrate the large potential of photosensitive hybrid passivation layers as effective passivation materials.

Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

International Nuclear Information System (INIS)

King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal

2008-01-01

Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles

Hybrid passivated colloidal quantum dot solids

KAUST Repository

Ip, Alex

2012-07-29

Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

Hybrid passivated colloidal quantum dot solids

KAUST Repository

Ip, Alex; Thon, Susanna; Hoogland, Sjoerd H.; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan K.; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin H.; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, E. H.

2012-01-01

Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Passivation effect of water vapour on thin film polycrystalline Si solar cells

Czech Academy of Sciences Publication Activity Database

Pikna, Peter; Müller, Martin; Becker, C.; Fejfar, Antonín

2016-01-01

Roč. 213, č. 7 (2016), s. 1969-1975 ISSN 1862-6300 R&D Projects: GA MŠk LM2015087; GA ČR GA13-12386S Grant - others:AV ČR(CZ) DAAD-16-27 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : passivation, * plasma hydrogenation * silicon * solar cells * thin films * water vapour Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.775, year: 2016

Atomic emission spectroelectrochemistry applied to dealloying phenomena II. Selective dissolution of iron and chromium during active-passive cycles of an austenitic stainless steel

International Nuclear Information System (INIS)

Ogle, K.; Mokaddem, M.; Volovitch, P.

2010-01-01

Atomic emission spectroelectrochemistry was used to investigate selective dissolution of a 304 austenitic stainless steel sample in 2 M H 2 SO 4 . The partial dissolution rates of Fe, Cr, Ni, Mn, Mo, and Cu were measured as function of time during a series of potentiostatic triggered activation/passivation cycles. When first exposed to sulfuric acid solution, the steel sample was in a passive state with a total steady state ionic dissolution rate expressed as an equivalent current density of 10 μA cm -2 . A transition into the active and passive state could be triggered by cathodic (-700 mV vs. Ag/AgCl) and anodic (+400 to +700 mV vs. Ag/AgCl) potentiostatic pulses respectively of variable time. Excess Cr dissolution was observed during the activation cycle as compared to Fe and a depletion of Cr dissolution was observed during the passivation cycle. These results are interpreted in terms of the dissolution of a Cr rich passive layer during activation and selective dissolution of Fe, Mn, Ni and other elements to form a Cr rich passive layer during passivation. Quantitative analysis of the excess Cr showed that the residual film contained approximately 0.38 μg Cr/cm 2 . Fe does not appear to be incorporated into the film at this early stage of passive film growth. Residual films of metallic nickel and copper were formed on the surface during the active period that subsequently dissolved during passivation.

Passivation of Si(111) surfaces with electrochemically grafted thin organic films

Science.gov (United States)

Roodenko, K.; Yang, F.; Hunger, R.; Esser, N.; Hinrichs, K.; Rappich, J.

2010-09-01

Ultra thin organic films (about 5 nm thick) of nitrobenzene and 4-methoxydiphenylamine were deposited electrochemically on p-Si(111) surfaces from benzene diazonium compounds. Studies based on atomic force microscopy, infrared spectroscopic ellipsometry and x-ray photoelectron spectroscopy showed that upon exposure to atmospheric conditions the oxidation of the silicon interface proceed slower on organically modified surfaces than on unmodified hydrogen passivated p-Si(111) surfaces. Effects of HF treatment on the oxidized organic/Si interface and on the organic layer itself are discussed.

Passivation behavior of Type 304 stainless steel in a non-aqueous alkyl carbonate solution containing LiPF6 salt

International Nuclear Information System (INIS)

Myung, Seung-Taek; Sasaki, Yusuke; Saito, Takamitsu; Sun, Yang-Kook; Yashiro, Hitoshi

2009-01-01

Passivation behavior of type 304 stainless steel in a non-aqueous alkyl carbonate solution containing LiPF 6 salt was studied using electrochemical polarization, X-ray photoelectron spectroscopy (XPS) and time of flight-secondary ion mass spectroscopy (ToF-SIMS). Cathodic polarization to 0 V vs. Li/Li + resulted in most but not complete reduction of the air-formed film from oxides to metal on the stainless steel, as confirmed by XPS. For complete elimination of the air-formed film, the surface of the stainless steel was scratched under anodic polarization conditions. At 3 V vs. Li/Li + where an anodic current peak appeared, only an indistinct layer was recognized on the newly scratched surface, according to ToF-SIMS analysis. Above 4 V vs. Li/Li + , substantial passive films were formed, which were composed of oxides and fluorides of iron and chromium. The origin of oxide was due to water contained in the non-aqueous alkyl carbonate solution, and that of fluorides were the result of the decomposition of electrolytic salt, LiPF 6 , especially at higher potential. The resultant passive films were stable in the non-aqueous alkyl carbonate solution containing LiPF 6 salt.

Children's Preferences for Film Form and Technique.

Science.gov (United States)

Cox, Carole

1982-01-01

Describes the methodology and results of a study of the preferences of fourth- and fifth-grade children for film form and technique. Indicates that children prefer narrative/live action films, followed by narrative/animation, nonnarrative/live action, and nonnarrative/animation. (HTH)

Characterization of Al2O3 surface passivation of silicon solar cells

International Nuclear Information System (INIS)

Albadri, Abdulrahman M.

2014-01-01

A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

Dynamic Characteristics of Rotors on Passive and Active Thrust Fluid-film Bearings with Fixed Pads

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Babin Alexander

2018-01-01

Full Text Available Application of fluid-film bearings in rotor machines in many cases could have no alternative due to obvious advantages when compared to roller element bearings. Integration of information technology in mechanical engineering resulting in emergence of a new field of research – mechatronic bearings which allowed tracking condition of the most important parts of a machine and adjusting operational parameters of the system. Application of servo valves to control the flow rate through a fluid-film bearing is the most universal and simple way of rotor’s position control due to relative simplicity of modelling and absence of need to radically change the design of conventional hydrodynamic bearings. In the present paper numerical simulations of passive (conventional as opposed to mechatronic and active hybrid thrust fluid-film bearings with a central feeding chamber are presented, that are parts of a mechatronic rotor-bearing node. Numerical model of an active thrust bearing is based on solution of equations of hydrodynamics, rotor dynamics and an additional model of a servo valve. Various types of control have been investigated: P, PI and PID control, and the dynamic behaviour of a system has been estimated under various loads, namely static, periodic and impulse. A design of a test rig has been proposed to study passive and active thrust fluid-film bearings aimed at, among other, validation of numerical results of active bearings simulation.

Investigation of electrochemical behaviour and structure of oxide films on Ni60Nb40 alloy in amorphous and crystalline states

International Nuclear Information System (INIS)

Tomashov, N.D.; Skvortsova, I.B.; Gorodetskij, A.E.; Bogomolov, D.B.

1987-01-01

Electrochemical properties of Ni 60 Nb 40 alloy in amorphous and crystalline states as well as structure of oxide films forming during anode polarization in electrolytes on the surface of this alloy in both its states are investigated. It is stated that increased passive ability of Ni 60 Nb 40 alloys in amorphous state and high efficiency of chlorine evolution (2 n NaCl+HCl up to pH=0) anode process in comparison with crystalline state are defined by increased homogeneity and uniformity of passive films forming on amorphous alloy and their increased electron conductivity, that is in direct dependence on different structure of passive films forming on alloys in amorphous and crystalline states

Formation of resonant bonding during growth of ultrathin GeTe films

NARCIS (Netherlands)

Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella

2017-01-01

A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

International Nuclear Information System (INIS)

Hanyu, Yuichiro; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Kumomi, Hideya; Hosono, Hideo

2013-01-01

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H 2 O indicate that this threshold annealing temperature corresponds to depletion of H 2 O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested

Revealing Nanoscale Passivation and Corrosion Mechanisms of Reactive Battery Materials in Gas Environments.

Science.gov (United States)

Li, Yuzhang; Li, Yanbin; Sun, Yongming; Butz, Benjamin; Yan, Kai; Koh, Ai Leen; Zhao, Jie; Pei, Allen; Cui, Yi

2017-08-09

Lithium (Li) metal is a high-capacity anode material (3860 mAh g -1 ) that can enable high-energy batteries for electric vehicles and grid-storage applications. However, Li metal is highly reactive and repeatedly consumed when exposed to liquid electrolyte (during battery operation) or the ambient environment (throughout battery manufacturing). Studying these corrosion reactions on the nanoscale is especially difficult due to the high chemical reactivity of both Li metal and its surface corrosion films. Here, we directly generate pure Li metal inside an environmental transmission electron microscope (TEM), revealing the nanoscale passivation and corrosion process of Li metal in oxygen (O 2 ), nitrogen (N 2 ), and water vapor (H 2 O). We find that while dry O 2 and N 2 (99.9999 vol %) form uniform passivation layers on Li, trace water vapor (∼1 mol %) disrupts this passivation and forms a porous film on Li metal that allows gas to penetrate and continuously react with Li. To exploit the self-passivating behavior of Li in dry conditions, we introduce a simple dry-N 2 pretreatment of Li metal to form a protective layer of Li nitride prior to battery assembly. The fast ionic conductivity and stable interface of Li nitride results in improved battery performance with dendrite-free cycling and low voltage hysteresis. Our work reveals the detailed process of Li metal passivation/corrosion and demonstrates how this mechanistic insight can guide engineering solutions for Li metal batteries.

Use of the piezoelectric film for the determination of cracks and defects - the passive and active electric potential CT method

International Nuclear Information System (INIS)

Kubo, S; Sakagami, T; Suzuki, T; Maeda, T; Nakatani, K

2008-01-01

The passive and active electric potential CT method was proposed by using piezoelectric film for identification of cracks and defects. This method is based on the principle of mutual conversion between mechanical strains and electric potential of piezoelectric material. A smart-layer was constructed using the piezoelectric film, and attached on a structure with a defect. When the structure was subjected to a mechanical load, the electric potential distribution appeared passively on the piezoelectric film due to the direct piezoelectric effect. The defect can be identified from the distribution with the help of inverse analysis. It was found that the crack could be identified reasonably, although the defect depth was not well estimated for the defects located far from the layer. When the electric signal was input to the smart-layer, acoustic wave was actively emitted from the layer due to the inverse piezoelectric effect, and a reflected wave was received on the layer. It was found that the depth of the defect could be estimated well. The simultaneous use of the passive method and the active method is promising for the identification of the defect.

Alkali passivation mechanism of sol-gel derived TiO2-SiO2 films coated on soda-lime-silica glass substrates

Energy Technology Data Exchange (ETDEWEB)

Matsuda, A; Matsuno, Y; Katayama, S; Tsuno, T [Nippon Steel Glass Co. Ltd., Tokyo (Japan); Toge, N; Minami, T [University of Osaka Prefecture, Osaka (Japan). College of Engineering

1992-09-01

TiO2-SiO2 films prepared by the sol-gel method serves as an effective alkali passivation layer on a soda-lime-silica glass substrate and the film is superior to a sol-gel derived pure SiO2 film from the view point of weathering resistance improvement. To clarify the reason, alkali passivation mechanism of sol-gel derived TiO2-SiO2 glass films with different TiO2 contents coated on a soda-lime-silica glass substrate was studied by SIMS (secondary ion mass spectroscopy) and XPS (X-ray photoelectron spectroscopy) analyses, and compared with the results of a sol-gel derived pure SiO2 film. As a result, the following conclusions were obtained: An increase in TiO2 content in the TiO2 SiO2 film increases the sodium concentration in the film, which was induced by sodium migration from the glass substrate during the heat-treatment. Because of the presence of sodium the TiO2 -SiO2 films serve not as a barrier but as an effective getter of alkali ions and thereby effectively improve the weathering resistance Of the glass substrate. 10 refs., 6 figs.

The hydroxylation of passive oxide films on X-70 steel by dissolved hydrogen studied by nuclear reaction analysis, Auger electron spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectroscopy

International Nuclear Information System (INIS)

Zhang Chunsi; Luo Jingli; Munoz-Paniagua, David; Norton, Peter R.

2006-01-01

Dissolved hydrogen is known to reduce the corrosion resistance of a passive oxide film on iron and its alloys, especially towards pitting corrosion. Electrochemical techniques have been used to show that the passive films are changed by dissolved hydrogen in an alloy substrate, but direct confirmation of the chemical and compositional profiles and changes has been missing. In this paper we report the direct profiling and compositional analysis of the 4 nm passive film on X-70 steel by Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and nuclear reaction analysis (NRA) while hydrogen (deuterium) is charged into the alloy samples from the reverse, unpassivated side. The only route for D to the passive film is therefore by dissolution and diffusion. We show that the original duplex structure of the passive film is converted to a more continuous film containing hydroxyl groups, by reaction with the dissolved hydrogen. This conversion of the oxide ions to hydroxyl groups can lead to more rapid reaction and replacement with (e.g.) Cl - , which is known to enhance pitting. These results are entirely consistent with previous electrochemical studies and provide the first direct confirmation of models on the formation and role of hydroxyl groups derived from these earlier studies

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

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Neha Batra

2015-06-01

Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

Passivation Behavior of Type-316L Stainless Steel in the Presence of Hydrogen Sulfide Ions Generated from a Local Anion Generating System

International Nuclear Information System (INIS)

Lee, Jun-Seob; Kitagawa, Yuichi; Nakanishi, Takayuki; Hasegawa, Yasuchika; Fushimi, Koji

2016-01-01

The passivity of type 316L stainless steel was studied in a pH 8.4 boric acid-borate buffer solution containing hydrogen sulfide ions (HS − ) by using a local anion-generating system. During potentiostatic polarization of the stainless steel at a primary passive potential of 0.4 V SSE and at a secondary passive potential of 0.9 V SSE in solutions with and without HS − , the current density flowing for passive film formation was increased by the presence of HS − at both potentials, while 15 Hz impedance at 0.9 V SSE in the solution with HS − was larger than that in the solution without HS − . It was thought that the presence of HS − in the solution during film formation made the film less resistive and affected the film capacitance depending on the polarization potential. X-ray photoelectron spectroscopy (XPS) showed an increase in metal cation and oxygen anion vacancies in the passive film formed at the primary passive state in the solution containing HS − . Auger electron spectroscopy (AES) and Raman spectroscopy revealed that a sulfide layer was deposited on the stainless steel surface that was oxidized at the secondary passive state in the solution containing HS − . It is thought that application of a high potential changes the passivity of the stainless steel surface in the solution containing HS − .

Application of gamma irradiation on forming protein-based edible films

International Nuclear Information System (INIS)

Sabato, Susy Frey

2000-01-01

In the last decade considerable interest has been addressed to the development of protein-based edible films due to their application in the food industry, as a substitute to traditional plastic films. The use of soy and whey proteins to form those films has been investigated, using heat, chemical and enzymatic processes. Gamma irradiation was recently reported to form caseinate-based edible films, due to the increase of the cohesive strength of the proteins by the formation of cross-links. This work aimed to verify the role of the gamma irradiation in the process of forming edible films from soy protein isolate (SPI) alone and in complex mixtures, that is, mixed with whey protein isolate (WPI), with carbethoxymethyl cellulose (CMC) and with poly(vinyl)alcohol (PVA). Gamma irradiation treatment improved significantly the mechanical properties for all films. The mechanical behavior is strongly related to the formulation, showing synergy between the gamma irradiation and the CMC, mainly for SPI-based films. SPI-based films presented a trend to decrease the water vapor permeability values when irradiated. The CMC addition showed significant improvements on the permeability for films from SPI and from the mixture of SPI with WPI. (author)

Influence of Temperature and Chloride Concentration on Passivation Mechanism and Corrosion of a DSS2209 Welded Joint

Science.gov (United States)

Hachemi, Hania; Azzaz, Mohamed; Djeghlal, Mohamed Elamine

2016-10-01

The passivity behavior of a 2209 duplex stainless steel welded joint was investigated using potentiodynamic polarization, Mott-Schottky analysis and EIS measurements. In order to evaluate the contribution of temperature, chloride concentration and microstructure, a sequence of polarization tests were carried out in aerated NaCl solutions selected according to robust design of a three level-three factors Taguchi L9 orthogonal array. Analysis of signal-to-noise ratio and ANOVA were achieved on all measured data, and the contribution of every control factor was estimated. The results showed that the corrosion resistance of 2209 duplex stainless steel welded joint is related to the evolution of the passive film formed on the surface. It was found that the passive film on the welded zone possessed n- and p-type semiconductor characteristics. With the increase of solution temperature and chlorides concentration, the corrosion resistance of the passive film is more affected in the weldment than in the base metal.

Electrochemical characterization of anode passivation mechanisms in copper electrorefining

Science.gov (United States)

Moats, Michael Scott

Anode passivation can decrease productivity and quality while increasing costs in modern copper electrorefineries. This investigation utilized electrochemical techniques to characterize the passivation behavior of anode samples from ten different operating companies. It is believed that this collection of anodes is the most diverse set ever to be assembled to study the effect of anode composition on passivation. Chronopotentiometry was the main electrochemical technique, employing a current density of 3820 A m-2. From statistical analysis of the passivation characteristics, increasing selenium, tellurium, silver, lead and nickel were shown to accelerate passivation. Arsenic was the only anode impurity that inhibited passivation. Oxygen was shown to accelerate passivation when increased from 500 to 1500 ppm, but further increases did not adversely affect passivation. Nine electrolyte variables were also examined. Increasing the copper, sulfuric acid or sulfate concentration of the electrolyte accelerated passivation. Arsenic in the electrolyte had no effect on passivation. Chloride and optimal concentrations of thiourea and glue delayed passivation. Linear sweep voltammetry, cyclic voltammetry, and impedance spectroscopy provided complementary information. Analysis of the electrochemical results led to the development of a unified passivation mechanism. Anode passivation results from the formation of inhibiting films. Careful examination of the potential details, especially those found in the oscillations just prior to passivation, demonstrated the importance of slimes, copper sulfate and copper oxide. Slimes confine dissolution to their pores and inhibit diffusion. This can lead to copper sulfate precipitation, which blocks more of the surface area. Copper oxide forms because of the resulting increase in potential at the interface between the copper sulfate and anode. Ultimate passivation occurs when the anode potential is high enough to stabilize the oxide film in

Surface passivation by Al2O3 and a-SiNx: H films deposited on wet-chemically conditioned Si surfaces

NARCIS (Netherlands)

Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, K.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.

2012-01-01

The surface passivation of p- and n-type silicon by different chemically grown SiO2 films (prepared by HNO3, H2SO4/H2O2 and HCl/H2O2 treatments) was investigated after PECVD of a-SiNx:H and ALD of Al2O3 capping films. The wet chemically grown SiO2 films were compared to thermally grown SiO2 and the

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

2013-11-11

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested.

Electrochemical properties of the passive film on bulk Zr–Fe–Cr intermetallic fabricated by spark plasma sintering

Energy Technology Data Exchange (ETDEWEB)

Bai, Yakui [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Ling, Yunhan, E-mail: yhling@mail.tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Xing, Shupei; Ma, Wen [School of Materials Science and Engineering, Inner Mongolia University of Technology, Huhhot 010051 (China)

2016-12-01

Highlights: • SPS was employed to prepare Zr-based intermetallics which were commonly existed in zircaloy. • Zr-based intermetallics act as cathode when they embedded in zirconium matrix. • The passive films on surface of intermetallics behaved as n-type semiconductors. • Carrier concentration of Zr(Fe{sub 3}Cr){sub 2} was much lower than that of other intermetallics. - Abstract: Although Zr-based second phase particles (SPPs) are important factors influencing corrosion resistance of zircaloy cladding materials, the corrosion behavior of SPPs has not been investigated by means of electrochemical method so far. In order to clarify the role of SPPs commonly existed in zircaloy, bulk Zr-based intermetallics were firstly fabricated by spark plasma sintering (SPS) at temperatures 1373 K and an applied pressure of 60 MPa in this work. Both the natural passive film on surface and oxidation behavior of intermetallic has been investigated in this work. X-ray diffraction (XRD) pattern showed that as-prepared intermetallic of crystal structure belongs to Laves phase with AB{sub 2} type. Electrochemical measurement of passive film on surface of bulk Zr-based intermetallic exhibited significant difference with that of zirconium. Potentiodynamic measurements results revealed that intermetallic exhibited higher corrosion potential and lower corrosion current density than that of pure zirconium, implying that Zr-based second phase will act as cathode when they are included in zirconium matrix. Meanwhile, significant improvement of Zr–Fe–Cr intermetallic on the water chemistry corrosion resistance was demonstrated comparing with Zr–Fe and Zr–Cr binary intermetallics.

Semiconducting properties of oxide films formed onto an Nb electrode in NaOH solutions

Directory of Open Access Journals (Sweden)

VLADIMIR D. JOVIC

2008-03-01

Full Text Available In this paper, the results of the potentiostatic formation of homogeneous and heterogeneous, nano-crystalline passive films of Nb2O5 onto an Nb electrode in NaOH solutions of different concentrations at potentials lower than 3.0 V vs. SCE are presented. The semiconducting properties of such films were investigated by EIS measurements. After fitting the EIS results by appropriate equivalent circuits, the space charge capacitance (Csc and space charge resistance (Rsc of these films were determined. The donor density (Nsc, flat band potential (Efb and thickness of the space charge layer (dsc for such oxide films were determined from the corresponding Mott–Schottky (M–S plots. It is shown that all oxide films were n-type semiconductors in a certain potential range.

Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Science.gov (United States)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-05-01

Low temperature processable passivation materials are necessary to fabricate highly reliable amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) on organic substrates for flexible device applications. We investigated 3 types of poly-siloxane (Poly-SX) passivation layers fabricated by a solution process and cured at low temperatures (180 °C) for a-IGZO TFTs. This passivation layer greatly improves the stability of the a-IGZO device even after being subjected to positive (PBS) and negative bias stress (NBS). The field effect mobility (μ) of MePhQ504010 passivated on the TFT reached 8.34 cm2/Vs and had a small threshold voltage shift of 0.9 V after PBS, -0.8 V after NBS without the hump phenomenon. Furthermore, we analyzed the hydrogen and hydroxide states in the a-IGZO layer by secondary ion mass spectrometry and X-ray photoelectron spectroscopy to determine the cause of excellent electrical properties despite the curing performed at a low temperature. These results show the potential of the solution processed Poly-SX passivation layer for flexible devices.

Electron transfer across anodic films formed on tin in carbonate-bicarbonate buffer solution

International Nuclear Information System (INIS)

Gervasi, C.A.; Folquer, M.E.; Vallejo, A.E.; Alvarez, P.E.

2005-01-01

Impedance and steady-state data were recorded in order to study the kinetics of electron transfer between passive tin electrodes and an electrolytic solution containing the K 3 Fe(CN) 6 -K 4 Fe(CN) 6 redox couple. Film thickness plays a key role in determining the type of electronic conduction of these oxide covered electrodes. Electron exchange with the oxide takes place with participation of the conduction band in the semiconducting film. A mechanism involving direct electron tunneling through the space charge barrier is the most suitable to interpret the experimental evidence

Production and study of mixed Al-Al2O3 thin films for passive electronic circuits

International Nuclear Information System (INIS)

Pruniaux, B.

1966-09-01

A new vacuum deposition process, named reactive evaporation, is used to realize passive thin film circuits. Using aluminium, oxidized at various steps in its vapor phase, we obtain: - Al-Al 2 O 3 cermet resistors (R □ = 10000 Ω □ , CTR 2 O 3 capacitors (C □ = 60000 pf/cm 2 , tg δ [fr

XPS and electrochemical studies of the dissolution and passivation of molybdenum-implanted austenitic stainless steels

International Nuclear Information System (INIS)

De Vito, E.; Marcus, P.

1993-01-01

X-ray Photoelectron Spectroscopy (XPS) was used to investigate the chemical composition and the chemical states of the passive film formed on austenitic stainless steels (Fe-19Cr-10Ni (at.%)) which have been implanted with molybdenum (Mo + , 100 keV, 2.5 x 10 16 at./cm 2 ). Prior to passivation the implanted alloy was characterized by RBS (Rutherford Backscattering Spectroscopy) and XPS. Alloys with well-defined surface concentrations of molybdenum were prepared by ion sputtering the implanted alloy in the preparation chamber of the spectrometer, to a fixed point in the implantation profile. The samples were then transferred without air exposure to a glove box with inert gas in which the electrochemical measurements were performed. After passivation, return transfer of the passivated samples was done with the same transfer device to avoid exposure to air. In 0.5 M H 2 SO 4 , the anodic dissolution current density decreases with increasing Mo content on the alloy surface. Surface analysis by XPS showed that the surface is enriched with molybdenum in the Mo 4+ chemical state. The current density in the passive state is similar for both the non-implanted and the implanted alloys. Surface analysis by XPS showed that the passive film has a bilayer structure (inner oxide and outer hydroxide) and that the hydroxide layer present on the surface of the passive film is markedly enriched with molybdenum in the Mo 6+ chemical state. The XPS measurements indicate that the presence of molybdenum favors the formation of chromium hydroxide at the expense of chromium oxide. A significant enrichment of the alloyed (Cr, Ni) and implanted (Mo) elements was also observed in the metallic phase under the passive film. The possible mechanisms of the effect of molybdenum on the corrosion resistance of stainless steels are discussed in light of the obtained surface analytical results

Passivation and corrosion behaviours of cobalt and cobalt-chromium-molybdenum alloy

International Nuclear Information System (INIS)

Metikos-Hukovic, M.; Babic, R.

2007-01-01

Passivation and corrosion behaviour of the cobalt and cobalt-base alloy Co30Cr6Mo was studied in a simulated physiological solution containing chloride and bicarbonate ions and with pH of 6.8. The oxido-reduction processes included solid state transformations occurring at the cobalt/electrolyte interface are interpreted using theories of surface electrochemistry. The dissolution of cobalt is significantly suppressed by alloying it with chromium and molybdenum, since the alloy exhibited 'chromium like' passivity. The structural and protective properties of passive oxide films formed spontaneously at the open circuit potential or during the anodic polarization were studied using electrochemical impedance spectroscopy in the wide frequency range

Passive cooling in modern nuclear reactors

International Nuclear Information System (INIS)

Rouai, N. M.

1998-01-01

This paper presents some recent experimental results performed with the aim of understanding the mechanism of passive cooling. The AP 600 passive containment cooling system is simulated by an electrically heated vertical pipe, which is cooled by a naturally induced air flow and by a water film descending under gravity. The results demonstrate that although the presence of the water film improved the heat transfer significantly, the mode of heat transfer was very dependent on the experimental parameters. Preheating the water improved both film stability and overall cooling performance

Electrochemical and surface characterisation of oxide films on nano-grain nickel films electrodeposited on INCOLOY-800

International Nuclear Information System (INIS)

Navin Vinayak, S.; Sunitha, Y.; Rangarajan, S.; Narasimhan, S.V.

2008-01-01

Nano materials have different properties from the corresponding bulk materials because of fine grain size, large fraction of surface atoms, high surface energy and high grain boundary volume fraction. For similar reasons, the nano-alloy coatings show superior high-temperature corrosion resistance and are generally more resistant to stress corrosion cracking. Hence, it is of interest to know the materials performance, if the structural materials used in nuclear reactors are made of nano-grains. In Indian PHWRs, Incoloy-800 is being used as the steam generator tubing material. It's corrosion resistance property is very important as it forms not only the pressure boundary between the radioactive primary water and non-active secondary water but also from the view point of loss of heavy water, in case of any corrosion damage. In this paper, the corrosion resistance of the oxide films formed on nano-grain nickel film electrodeposited on Incoloy-800 (a) in the presence of saccharine (WS) and (b) in the absence of saccharine (WOS) were compared with that formed on Commercial Ni foil, using electrochemical dc polarization and ac impedance techniques. The surface morphology, elemental analysis and grain size were studied with SEM, EDX and XRD techniques respectively. The nano-grain nickel films were prepared on Incoloy-800 by electrodeposition using Watt's Bath with saccharine sodium as a surfactant. The oxide films were developed by exposing them to LiOH solution (pH-10.0) at 245 deg C for 3 days (A-group) and 7 days (B-group). XRD results showed that the grain size of Ni formed in the absence of saccharine (WOS) was ∼ 60 nm and did not change after being autoclaved. But, for Ni formed in the presence of saccharine (WS), the grain size was ∼ 16 nm which increased to 40-50 nm after being autoclaved. With both A and B-group specimens, the PDAP curves showed an active-passive transition, a passive region and a transpassive region in 2N H 2 SO 4 . However, the critical

Carbon steel protection in G.S. (Girlder sulfide) plants. Iron sulfide scales formation on surfaces covered by fabrication produced films. Pt. 4

International Nuclear Information System (INIS)

Burkart, A.L.

1986-04-01

This work describes the assays aimed to passivate the steel carbon of the process pipings. This steel is marked by the ASTM A 333 G6 and is chemically similar to those of isotopic exchange towers which corrode in contact with in-water hydrogen sulfide solutions forming iron sulfide protective layers. The differences between both materials lie in the surface characteristics to be passivated. The steel of towers has an internal side covered by paint which shall be removed prior to passivation. The steel's internal side shall be covered by a film formed during the fabrication process and constituted by calcinated wastes and iron oxides (magnetite, hematite and wustite). This film interferes in the formation process of passivating layers of pyrrhotite and pyrite. The possibility to passivate the pipes in their actual state was evaluated since it would result highly laborious and expensive to eliminate the film. (Author) [es

Experimental method and preliminary studies of the passive containment water film evaporation mass transfer

Energy Technology Data Exchange (ETDEWEB)

Li, Cheng [State Nuclear Power Technology Research, Beijing (China). Development Center; State Nuclear Power Research Institute, Beijing (China); Yang, Lin; Zhao, Wei; Zhou, Shan; Du, Wangfang; Gao, Zhan; Li, Honegsen [State Nuclear Power Technology Research, Beijing (China). Development Center

2017-05-15

For larger containments and higher operation parameters, characteristics of the outside cooling of the PCCS are very important for the analysis on the containment integrity. A preliminary analysis was made and a four-step experimental method was used to numerically analyze the falling water film evaporation for the advanced passive containment. Then, the water flow stability along the outside wall of the containment was studied. The results fit well with those correlations without airflow when the air velocity is less than 5.0 m/s. However, when the air velocity is larger than 5.0 m/s, the influence of the air velocity on the water film will appear and the mean water film thickness will be thicker. Based on the prototype operation parameters, experimental studies were carried and the results were compared with the Dittus-Boelter correlation within the operation ranges. A modification factor was proposed for the conservative application of this correlation for nuclear safety analysis.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

International Nuclear Information System (INIS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N; Uraoka, Yukiharu; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ∼13 cm 2 V −1 s −1 and small threshold voltage which varied from ∼0–3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs. (paper)

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

Directory of Open Access Journals (Sweden)

Ing-Song Yu

2013-01-01

Full Text Available Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to deposit TiO2 thin films for the surface passivation and antireflection coating of silicon solar cells. TiO2 thin films deposited at different temperatures (200°C, 300°C, 400°C, and 500°C on FZ n-type silicon wafers are in the thickness of 66.4 nm ± 1.1 nm and in the form of self-limiting growth. For the properties of surface passivation, Si surface is effectively passivated by the 200°C deposition TiO2 thin film. Its effective minority carrier lifetime, measured by the photoconductance decay method, is improved 133% at the injection level of  cm−3. Depending on different deposition parameters and annealing processes, we can control the crystallinity of TiO2 and find low-temperature TiO2 phase (anatase better passivation performance than the high-temperature one (rutile, which is consistent with the results of work function measured by Kelvin probe. In addition, TiO2 thin films on polished Si wafer serve as good ARC layers with refractive index between 2.13 and 2.44 at 632.8 nm. Weighted average reflectance at AM1.5G reduces more than half after the deposition of TiO2. Finally, surface passivation and antireflection properties of TiO2 are stable after the cofire process of conventional crystalline Si solar cells.

Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

International Nuclear Information System (INIS)

Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

2011-01-01

We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

Electron transfer across anodic films formed on tin in carbonate-bicarbonate buffer solution

Energy Technology Data Exchange (ETDEWEB)

Gervasi, C.A. [Universidad Nacional de La Plata (Argentina). Facultad de Ciencias Exactas; Universidad Nacional de La Plata (Argentina). Facultad de Ingenieria; Folquer, M.E. [Universidad Nacional de Tucaman (Argentina). Inst. de Quimica Fisica; Vallejo, A.E. [Universidad Nacional de La Plata (Argentina). Facultad de Ingenieria; Alvarez, P.E. [Universidad Nacional de Tucaman (Argentina). Inst. de Fisica

2005-01-15

Impedance and steady-state data were recorded in order to study the kinetics of electron transfer between passive tin electrodes and an electrolytic solution containing the K{sub 3}Fe(CN){sub 6}-K{sub 4}Fe(CN){sub 6} redox couple. Film thickness plays a key role in determining the type of electronic conduction of these oxide covered electrodes. Electron exchange with the oxide takes place with participation of the conduction band in the semiconducting film. A mechanism involving direct electron tunneling through the space charge barrier is the most suitable to interpret the experimental evidence. (Author)

Forming method of a functional layer-built film by micro-wave plasma CVD

Energy Technology Data Exchange (ETDEWEB)

Saito, Keishi

1988-11-18

In forming an amorphous semi-conductor material film, the micro-wave plasma CVD cannot be generally used because of such demerits as film-separation, low yield, columnar structure in the film, and problems in the optical and electrical properties. In this invention, a specific substrate is placed in a layer-built film forming unit which is capable of maintaining vacuum; raw material gas for the film formation is introduced; plasma is generated by a micro-wave energy to decompose the raw material gas, thus forming the layer-built film on the substarte. Then a film is made by adding a specific amount of calcoganide-containing gas to the raw material gas. By this, the utilization efficiency of the raw material gas gets roughly 100% and both the adhesion to the substrate and the structural flexibility of the layer-built film increase, enhancing the yield of forming various functional elements (sensor, solar cell, thin transistor film, etc.), and thus greatly reducing the production cost. 6 figs., 7 tabs.

Characterization of film-forming solutions and films incorporating free and nanoencapsulated tea polyphenol prepared by gelatins with different Bloom values

Science.gov (United States)

Gelatin film-forming solutions and their films incorporating tea polyphenol (TP) and chitosan nanoparticles (CSNs) were prepared from gelatins with different Bloom values (100, 150 and 225). Blank gelatin film-forming solutions and films were prepared as controls. Gelatins with higher Bloom values h...

Film Formation of Ag Nanoparticles at the Organic-Aqueous Liquid Interface

Science.gov (United States)

Vigorita, John

2005-03-01

A wet-chemical method to make films by spontaneous assembly of passivated Ag nanoparticles at the organic-aqueous liquid interface is presented. The interfacial films exhibit a blue opalescence, or in other cases a silvery color, and are characterized with transmission electron microscopy and UV-visible spectrophotometry. Measurements indicate that nanoparticles in the interfacial film can form superlattices and in some cases nanostructures.

The Effects of Applied Stress and Sensitization on the Passive Film Stability of Al-Mg Alloys

Science.gov (United States)

2013-06-01

evaluates effects of stress on the corrosion behavior for the aluminum magnesium alloy AA5083 in a comprehensive and systematic manner. This study used... comprehensive and systematic manner. This study used cyclic polarization and electrochemical impedance spectroscopy to study passive film stability...cyclic polarization DoD Department of Defense DON Department of the Navy EBD breakdown potential ECORR corrosion potential ECRIT critical potential

Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning

International Nuclear Information System (INIS)

Chen, Chao-Nan; Huang, Jung-Jie

2013-01-01

This study explored the removal of silicon nitride using KrF laser ablation technology with a high threshold fluence of 990 mJ/cm 2 . This technology was used for contact hole patterning to fabricate SiN x -passivation-based amorphous-silicon thin films in a transistor device. Compared to the photolithography process, laser direct patterning using KrF laser ablation technology can reduce the number of process steps by at least three. Experimental results showed that the mobility and threshold voltages of thin film transistors patterned using the laser process were 0.16 cm 2 /V-sec and 0.2 V, respectively. The device performance and the test results of gate voltage stress reliability demonstrated that laser direct patterning is a promising alternative to photolithography in the panel manufacturing of thin-film transistors for liquid crystal displays. - Highlights: ► KrF laser ablation technology is used to remove silicon nitride. ► A simple method for direct patterning contact-hole in thin-film-transistor device. ► Laser technology reduced processing by at least three steps

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

Science.gov (United States)

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Credible evidence for the passivation effect of remnant PbI₂ in CH₃NHCH₃PbICH₃ films in improving the performance of perovskite solar cells.

Science.gov (United States)

Wang, Shimao; Dong, Weiwei; Fang, Xiaodong; Zhang, Qingli; Zhou, Shu; Deng, Zanhong; Tao, Ruhua; Shao, Jingzhen; Xia, Rui; Song, Chao; Hu, Linhua; Zhu, Jun

2016-03-28

The role of remnant PbI2 in CH3NH3PbI3 films is still controversial, some investigations have revealed that the remnant PbI2 plays a passivation role, reduces the charge recombination in perovskite solar cells (PSCs), and improves the performance of PSCs, but the opposing views state that remnant PbI2 has no passivation effect and it would deteriorate the stability of the devices. In our investigation, the CH3NH3PbI3 films have been prepared by a two-step spin-coating method and the content of the remnant PbI2 in CH3NH3PbI3 films has been tuned by varying the preparation temperature. It has been found that increasing the heating temperature could increase the coverage of spin-coated PbI2 films, which has led to high coverage CH3NH3PbI3 films and more remnant PbI2 in CH3NH3PbI3 films, and as a result, the performance of PSCs was enhanced obviously and the maximum power conversion efficiency of 14.32 ± 0.28% was achieved by the PSCs prepared at 130/120 °C (PbI2 films were heated at 130 °C and CH3NH3PbI3 films were heated at 120 °C). Furthermore, the dark current, electrochemical impedance spectroscopy and time-resolved fluorescence emission decay measurements revealed that the charge recombination in PSCs has been gradually suppressed and the fluorescence emission lifetime has gradually increased with the content of remnant PbI2 increasing. Thus, the passivation effects of the unreacted and decomposed PbI2 in improving the performance of PSCs have been confirmed unquestionably.

Pb(Zr,TiO3 (PZT Thin Film Sensors for Fully-Integrated, Passive Telemetric Transponders

Directory of Open Access Journals (Sweden)

Richard X. FU

2011-04-01

Full Text Available The great potential of taking advantages of PZT in a single chip to achieve inexpensive, fully-integrated, passive telemetric transponders has been shown in this paper. The processes for the sputter deposition of Pb(Zr,TiO3 (PZT thin films from two different composite targets on both Si and c-plane sapphire substrates have been demonstrated. PZT thin films have been deposited by sputter technique. PZT films were deposited onto substrates (Si [(100 Cz wafer] and c-plane sapphire (0001//Ti//Pt followed by sputter-deposited Pt top electrodes. X-ray diffraction results showed that both sputtered PZT films were textured along the [110] direction. The degree of preference for the [110] direction was greater on sapphire substrate where the intensity of that peak is seen to be larger compared to the intensity one Si substrate. TEM data revealed that both sputtered PZT films were polycrystalline in nature. Selected area diffraction (SAD pattern showed that the degree of disorientation between the crystallites was smaller on sapphire substrate compared to on Si substrate, which confirmed the results from the XRD. The remnant polarization Pr on sapphire substrate was larger than on Si’s. The leakage current for the 11 % Pb target sputtered film was much less than 22 % Pb target sputtered film. The breakdown voltage on sapphire substrate was the best. However, for the 11 % Pb target sputtered film’s breakdown voltage was much higher than 22 % Pb target sputtered film.

Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Science.gov (United States)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-03-01

We investigated a fluorine-containing polysiloxane (Poly-SX) passivation layer fabricated by solution process for amorphous InGaZnO (a-IGZO) thin-film transistors (TFT). This passivation layer greatly improved the stability of the a-IGZO device even after being subjected to positive bias stress (PBS) and negative bias stress (NBS). The mobility (µ) of TFTs passivated by fluorine-containing Poly-SX increased by 31%-56% (10.50-12.54 cm2 V-1 s-1) compared with TFTs passivated by non-fluorinated Poly-SX (8.04 cm2 V-1 s-1). Increasing the amount of fluorine additives led to a higher µ in passivated TFTs. Aside from enhancing the performance, these passivation layers could increase the reliability of a-IGZO TFTs under PBS and NBS with a minimal threshold voltage shift (ΔV th) of up to  +0.2 V and  -0.1 V, respectively. Additionally, all TFTs passivated by the fluorinated passivation materials did not exhibit a hump effect after NBS. We also showed that fluorinated photosensitive Poly-SX, which can be fabricated without any dry etching process, had an effective passivation property. In this report, we demonstrated the photolithography of Poly-SX, and electrical properties of Poly-SX passivated TFTs, and analyzed the state of the a-IGZO layer to show the large potential of Poly-SX as an effective solution-processed passivation material.

Chemically abrupt interface between Ce oxide and Fe films

International Nuclear Information System (INIS)

Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

2005-01-01

A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

International Nuclear Information System (INIS)

Watanabe, S.

1984-01-01

The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

Science.gov (United States)

Xu, Runshen

, ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Electrochemical and passive behaviour of tin alloyed ferritic stainless steel in concrete environment

Science.gov (United States)

Luo, Hong; Su, Huaizhi; Li, Baosong; Ying, Guobing

2018-05-01

In the present work, the electrochemical behavior and semiconducting properties of a tin alloyed ferritic stainless steel in simulated concrete solution in presence of NaCl were estimated by conventional electrochemical methods such as potentiodynamic polarization, electrochemical impedance spectroscopy, and capacitance measurement (Mott-Schottky approach). The surface passive film was analyzed by X-ray photoelectron spectroscopy. The results revealed a good agreement between pitting corrosion, electrochemical behaviour, and electronic properties. The p and n-type bilayer structure passive film were observed. The increase of Sn4+ oxide species in the passive film shows no beneficial effects on the pitting corrosion. In addition, the dehydration of the passive film was further discussed.

Influence of stress on passive behaviour of steel bars in concrete pore solution

International Nuclear Information System (INIS)

Feng Xingguo; Tang Yuming; Zuo Yu

2011-01-01

Research highlights: → The influence of load on passivity of steel in concrete pore solution is studied. → The passivity of steel in pore solution decreased as the load amplitude increased. → A micro-crack model is presented to explain passive behaviour of steel under loads. - Abstract: The influence of stress on passive behaviour of steel bars in concrete pore solution was studied with electrochemical impedance spectroscopy and X-ray photoelectron spectroscopy. The passive ability of steel decreased as the applied load increased and higher load had much greater influence on passivation than repeated loading of small magnitude. A micro-crack model was presented to explain the damage of passive layer by loads. Lower load caused micro-cracks in the passive film which might be completely recovered after unloading. Under higher load more micro-cracks were produced in the passive film and some may penetrate the film, leading to irreversible damages.

Application of gamma irradiation on forming protein-based edible films; Aplicacao da irradiacao na formacao de filmes comestiveis proteicos

Energy Technology Data Exchange (ETDEWEB)

Sabato, Susy Frey

2000-07-01

In the last decade considerable interest has been addressed to the development of protein-based edible films due to their application in the food industry, as a substitute to traditional plastic films. The use of soy and whey proteins to form those films has been investigated, using heat, chemical and enzymatic processes. Gamma irradiation was recently reported to form caseinate-based edible films, due to the increase of the cohesive strength of the proteins by the formation of cross-links. This work aimed to verify the role of the gamma irradiation in the process of forming edible films from soy protein isolate (SPI) alone and in complex mixtures, that is, mixed with whey protein isolate (WPI), with carbethoxymethyl cellulose (CMC) and with poly(vinyl)alcohol (PVA). Gamma irradiation treatment improved significantly the mechanical properties for all films. The mechanical behavior is strongly related to the formulation, showing synergy between the gamma irradiation and the CMC, mainly for SPI-based films. SPI-based films presented a trend to decrease the water vapor permeability values when irradiated. The CMC addition showed significant improvements on the permeability for films from SPI and from the mixture of SPI with WPI. (author)

Polymer compositions, polymer films and methods and precursors for forming same

Science.gov (United States)

Klaehn, John R; Peterson, Eric S; Orme, Christopher J

2013-09-24

Stable, high performance polymer compositions including polybenzimidazole (PBI) and a melamine-formaldehyde polymer, such as methylated, poly(melamine-co-formaldehyde), for forming structures such as films, fibers and bulky structures. The polymer compositions may be formed by combining polybenzimidazole with the melamine-formaldehyde polymer to form a precursor. The polybenzimidazole may be reacted and/or intertwined with the melamine-formaldehyde polymer to form the polymer composition. For example, a stable, free-standing film having a thickness of, for example, between about 5 .mu.m and about 30 .mu.m may be formed from the polymer composition. Such films may be used as gas separation membranes and may be submerged into water for extended periods without crazing and cracking. The polymer composition may also be used as a coating on substrates, such as metal and ceramics, or may be used for spinning fibers. Precursors for forming such polymer compositions are also disclosed.

Film forming systems for topical and transdermal drug delivery

Directory of Open Access Journals (Sweden)

Kashmira Kathe

2017-11-01

Full Text Available Skin is considered as an important route of administration of drugs for both local and systemic effects. The effectiveness of topical therapy depends on the physicochemical properties of the drug and adherence of the patient to the treatment regimen as well as the system's ability to adhere to skin during the therapy so as to promote drug penetration through the skin barrier. Conventional formulations for topical and dermatological administration of drugs have certain limitations like poor adherence to skin, poor permeability and compromised patient compliance. For the treatment of diseases of body tissues and wounds, the drug has to be maintained at the site of treatment for an effective period of time. Topical film forming systems are such developing drug delivery systems meant for topical application to the skin, which adhere to the body, forming a thin transparent film and provide delivery of the active ingredients to the body tissue. These are intended for skin application as emollient or protective and for local action or transdermal penetration of medicament for systemic action. The transparency is an appreciable feature of this polymeric system which greatly influences the patient acceptance. In the current discussion, the film forming systems are described as a promising choice for topical and transdermal drug delivery. Further the various types of film forming systems (sprays/solutions, gels and emulsions along with their evaluation parameters have also been reviewed.

XPS study of the passive layers formed on lead in aqueous nitrate solutions

International Nuclear Information System (INIS)

Uchida, Miho; Okuwaki, Akitsugu

1997-01-01

The analysis of the lead surface immersed in aqueous nitrate solutions by X-ray photoelectron spectroscopy (XPS) shows the formation of passive oxide layer containing nitrogen compound. The oxide layer formed on the lead surface in aqueous ammonium nitrate solution was hydrolyzed and cracked. (author)

Effects of Nitrogen on the DOS and the Passive Film Breakdown Potential of AISI 304 Stainless Steel

International Nuclear Information System (INIS)

Choe, Han Cheol; Kim, Kwan Hyu; Kim, Myung Soo; Lee, Ho Jong

1992-01-01

Effects of nitrogen on the degree of sensitization (DOS) and the passive film breakdown potential (Eb) of AISI 304 stainless steel were studied by potentiostat. AISI 304 stainless steel samples containing 0.02 ∼ 0.10wt% nitrogen were sensitized by heat treatment at 650 .deg. C. The DOS was measured using the double-loop reactivation method of the electrochemical potentiodynamic reactivation (EPR) test with the potential scan rate of 150 mV/min in the electrolyte of 0.5 M H 2 SO 4 + 0.01 M KSCN solution at 25 .deg. C. The passive film breakdown potential (Eb) and repassivation potential (Er) were detected by using the cyclic potentiodynamic polarization test (CPPT) in 0.5M HCI solution at 25 .deg. C. In addition, corrosion morphologies were observed by SEM and optical microscope. It was found that nitrogen additions up to 0.1wt% decreased DOS and increased Eb and Er of AISI 304 stainless steel, whereas the increasing sensitization time increased the DOS and decreased Eb and Er. The corrosion morphologies showed severe pits and intergranular attacks in the samples of low nitrogen content and high DOS

Environmental effects on electrical properties of Cr-Si-Ni resistive films deposited by magnetron sputtering

International Nuclear Information System (INIS)

Zhang Yuqin; Dong Xianping; Wu Jiansheng

2005-01-01

The present paper investigated the environmental effects on electrical properties stability and long-term reliability of magnetron sputtered Cr-Si-Ni resistive films in 3.5% NaCl, 0.5 M Na 2 SO 4 and 0.5 M HCl solutions at 25 deg. C, which simulated marine, industrial and acidic environments. The relative resistance change (ΔR/R) for the annealed films revealed that the films had the best electrical properties stability and long-term reliability in industrial environments at 25 deg. C. After immersion in corrosion solutions for 480 h, the value of ΔR/R for the films was only 0.41% in industrial environments, and the values were 0.56 and 1.96% in marine and acidic environments, respectively. The polarization measurements and AES results indicated that the films presented a spontaneous trend to passivation, and could form a dense and stable protective oxide layer (Si oxide) on its surface rapidly that protected the films from further corrosion in three different environments. Furthermore, the formed passive film in industrial environments exhibited much more protective effects on the films than in marine and acidic environments

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Science.gov (United States)

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Flexible barrier film, method of forming same, and organic electronic device including same

Science.gov (United States)

Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

2013-03-26

A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

Local Fine Structural Insight into Mechanism of Electrochemical Passivation of Titanium.

Science.gov (United States)

Wang, Lu; Yu, Hongying; Wang, Ke; Xu, Haisong; Wang, Shaoyang; Sun, Dongbai

2016-07-20

Electrochemically formed passive film on titanium in 1.0 M H2SO4 solution and its thickness, composition, chemical state, and local fine structure are examined by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and X-ray absorption fine structure. AES analysis reveals that the thickness and composition of oxide film are proportional to the reciprocal of current density in potentiodynamic polarization. XPS depth profiles of the chemical states of titanium exhibit the coexistence of various valences cations in the surface. Quantitative X-ray absorption near edge structure analysis of the local electronic structure of the topmost surface (∼5.0 nm) shows that the ratio of [TiO2]/[Ti2O3] is consistent with that of passivation/dissolution of electrochemical activity. Theoretical calculation and analysis of extended X-ray absorption fine structure spectra at Ti K-edge indicate that both the structures of passivation and dissolution are distorted caused by the appearance of two different sites of Ti-O and Ti-Ti. And the bound water in the topmost surface plays a vital role in structural disorder confirmed by XPS. Overall, the increase of average Ti-O coordination causes the electrochemical passivation, and the dissolution is due to the decrease of average Ti-Ti coordination. The structural variations of passivation in coordination number and interatomic distance are in good agreement with the prediction of point defect model.

Corrosion and Passivation of Nickel Rotating Disk Electrode in Borate Buffer Solution

Energy Technology Data Exchange (ETDEWEB)

Kim, Younkyoo [Hankuk Univ. of Foreign Studies, Yongin (Korea, Republic of)

2013-10-15

The electrochemical corrosion and passivation of Ni rotating disk electrod in borate buffer solution was studied with potentiodynamic and electrochemical impedance spectroscopy. The mechanisms of both the active dissolution and passivation of nickel and the hydrogen evolution in reduction reaction were hypothetically established while utilizing the Tafel slope, impedance data, the rotation speed of Ni-RDE and the pH dependence of corrosion potential and current. Based on the EIS data, an equivalent circuit was suggested. In addition, carefully measured were the electrochemical parameters for specific anodic dissolution regions. It can be concluded from the data collected that the Ni(OH){sub 2} oxide film, which is primarily formed by passivation, is converted to NiO by dehydration under the influence of an electrical field.

Film forming microbial biopolymers for commercial applications--a review.

Science.gov (United States)

Vijayendra, S V N; Shamala, T R

2014-12-01

Microorganisms synthesize intracellular, structural and extracellular polymers also referred to as biopolymers for their function and survival. These biopolymers play specific roles as energy reserve materials, protective agents, aid in cell functioning, the establishment of symbiosis, osmotic adaptation and support the microbial genera to function, adapt, multiply and survive efficiently under changing environmental conditions. Viscosifying, gelling and film forming properties of these have been exploited for specific significant applications in food and allied industries. Intensive research activities and recent achievements in relevant and important research fields of global interest regarding film forming microbial biopolymers is the subject of this review. Microbial polymers such as pullulan, kefiran, bacterial cellulose (BC), gellan and levan are placed under the category of exopolysaccharides (EPS) and have several other functional properties including film formation, which can be used for various applications in food and allied industries. In addition to EPS, innumerable bacterial genera are found to synthesis carbon energy reserves in their cells known as polyhydroxyalkanoates (PHAs), microbial polyesters, which can be extruded into films with excellent moisture and oxygen barrier properties. Blow moldable biopolymers like PHA along with polylactic acid (PLA) synthesized chemically in vitro using lactic acid (LA), which is produced by LA bacteria through fermentation, are projected as biodegradable polymers of the future for packaging applications. Designing and creating of new property based on requirements through controlled synthesis can lead to improvement in properties of existing polysaccharides and create novel biopolymers of great commercial interest and value for wider applications. Incorporation of antimicrobials such as bacteriocins or silver and copper nanoparticles can enhance the functionality of polymer films especially in food packaging

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

International Nuclear Information System (INIS)

Zhang, Liping; Liu, Wenzhu; Liu, Jinning; Shi, Jianhua; Meng, Fanying; Liu, Zhengxin; Guo, Wanwu; Bao, Jian

2016-01-01

The positive roles of H 2 -plasma treatment (HPT) have been investigated by using different treatment procedures in view of the distinctly improved passivation performance of amorphous-crystalline silicon heterojunctions (SHJs). It has been found that a hydrogenated amorphous silicon thin film and crystalline silicon (a-Si:H/c-Si) interface with a high stretching mode (HSM) is detrimental to passivation. A moderate pre-HPT introduces atomic H, which plays an effective tuning role in decreasing the interfacial HSM; unfortunately, an epitaxial layer is formed. Further improvement in passivation can be achieved in terms of increasing the HSM of a-Si:H film treated by appropriate post-HPT based on the a-Si:H thickness. The minority carrier lifetime of crystalline wafers can be improved by treated films containing a certain quantity of crystallites. The microstructure factor R and the maximum intensity of the dielectric function ε 2max have been found to be critical microstructure parameters that describe high-quality a-Si:H passivation layers, which are associated with the amorphous-to-microcrystalline transition phase induced by multi-step HPT. Finally, the open circuit voltage and conversion efficiency of the SHJ solar cell can be improved by implementing an effective HPT process. (paper)

Passive films and corrosion protection due to phosphonic acid inhibitors

Energy Technology Data Exchange (ETDEWEB)

Fang, J.L.; Liu, Q. (Nanjing Univ. (China)); Li, Y.; Wang, Z.W. (Nanjing Inst. of Chemical Tech. (China))

1993-04-01

For protecting mild steel from corrosion, aminotrimethylidenephosphonic acid (ATMP) was more effective than 1-hydroxyethylidene diphosphonic acid (HEDP), N.N-dimethylidenediphosphonic acid (EEDP), and ethylenediaminetetramethylidenephosphonic acid (EDTMP). A 20-min treatment in 1.0 mol/l of ATMP with a pH 0.23 at 45 C formed an anti-corrosive complex film that was composed of 48.4% O, 28.6% P, 7.0% Fe, 4.3% N, and 11.7% C, based on x-ray photoelectron spectroscopy and Auger electron spectroscopy. From differences in binding energies of Fe, N, and O, in the shift of C-N and P-O vibration, in the reflection FTIR spectra, and in the change of P-OH and Fe-N vibration before and after film formation, it was deduced that N and O in ATMP were coordinated with Fe[sub 2+] in the film.

A study of surface films formed during maraging

International Nuclear Information System (INIS)

Khan, M.A.; Haq, A.U.; Khan, A.Q.; Waris, J.; Suleman, M.

1993-01-01

A study was carried out on thin films produced during maraging at 480 deg. 0 C for 3 hours in vacuum (of the order of 10/sup -4/ torr) and in N/ sub 2/ atmosphere. These surface films have been analyzed by Auger electron spectroscopy. Depth profiling for chemical analysis was performed after Ar /sup +/ ion sputtering to predict the compounds formed on the sample surface under prevailing conditions. It was noted that O/sub 2/N/sub 2/ and C are the main constituents of the top layers. These are considered as impurities in the films. Depth profiling showed a smooth interface between the N/sub 2/ and Ti and formation of Titanium nitride is predicted. (author)

Corrosion study of the passive film of amorphous Fe-Cr-Ni-(Si, P, B alloys

Directory of Open Access Journals (Sweden)

López, M. F.

1996-12-01

Full Text Available Amorphous Fe₆₂Cr₁₀Ni₈X₂₀ (X = P, B, Si alloys in 0.01M HCl solution have been investigated by means of standard electrochemical measurements in order to evaluate their corrosion resistance. The study reveals that the best corrosion behaviour is given by the Si containing amorphous alloy. X-ray photoelectron spectroscopy (XPS and Auger electron spectroscopy (AJES have been employed to study the composition of the passive layers, formed on the surface of the different amorphous alloys. The results on Fe₆₂Cr₁₀Ni₈X₂₀ show that a protective passive film, mainly consisting of oxidized chromium, greatly enhances its corrosion resistance.

La resistencia a la corrosión de las aleaciones amorfas Fe₆₂Cr₁₀Ni₈X₂₀ (X = P, B, Si inmersas en HCl 0,01M se evaluó usando técnicas electroquímicas. Las técnicas de espectroscopia de fotoemisión de rayos X y espectroscopia Auger se emplearon para estudiar la composición de las capas pasivas, formadas en aire sobre la superficie de las aleaciones amorfas. Del estudio realizado se concluye que el mejor comportamiento frente a la corrosión viene dado por la aleación amorfa que contiene como metaloide Si. Esto es debido a que la capa pasiva de dicha aleación está formada principalmente de óxido de cromo, lo cual confiere una alta resistencia a la corrosión.

Electrochromism of solid films of blue form of lutetium phthalocyanine complexe

Energy Technology Data Exchange (ETDEWEB)

Gavrilov, V I; Konstantinov, A P; Luk' yanets, E A; Shelepin, I V

1986-12-01

Results of spectral-electrochemical study on electrochromic films of blue form of tret-butyl-substituted lutetium diphthalocyanine deposited on the surface of an electrode contacting with electrolyte aqueous solution are presented. In the 0.2-1.15 V potential range sweep of the electrode potential is followed by reversible change of the film colour in the following succession: blue reversible green reversible red. Electrochromic properties of the film confirm the corresponding spectral transitions from the initial state to monoelectron-oxidized and further on to the product of two-electron oxidation. Under potential sweeping towards the anode in the 1.4 V range and irreversible wave arises; potential achievement of this wave brings about complete change in the form of j, E-curves. The consequent electrode processes are followed by change in the film colour green - red that is associated witn mechanical fracture of the film.

Efficient Inorganic Perovskite Light-Emitting Diodes with Polyethylene Glycol Passivated Ultrathin CsPbBr3 Films.

Science.gov (United States)

Song, Li; Guo, Xiaoyang; Hu, Yongsheng; Lv, Ying; Lin, Jie; Liu, Zheqin; Fan, Yi; Liu, Xingyuan

2017-09-07

Efficient inorganic perovskite light-emitting diodes (PeLEDs) with an ultrathin perovskite emission layer (∼30 nm) were realized by doping Lewis base polyethylene glycol (PEG) into CsPbBr 3 films. PEG in the perovskite films not only physically fills the crystal boundaries but also interacts with the perovskite crystals to passivate the crystal grains, reduce nonradiative recombination, and ensure efficient luminance and high efficiency. As a result, promoted brightness, current efficiency (CE), and external quantum efficiency (EQE) were achieved. The nonradiative decay rate of the PEG:CsPbBr 3 composite film is 1 order of magnitude less than that of the neat CsPbBr 3 film. After further optimization of the molar ratio between CsBr and PbBr 2 , a peak CE of 19 cd/A, a maximum EQE of 5.34%, and a maximum brightness of 36600 cd/m 2 were achieved, demonstrating the interaction between PEG and the precursors. The results are expected to offer some helpful implications in optimizing the polymer-assisted PeLEDs with ultrathin emission layers, which might have potential application in see-through displays.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

International Nuclear Information System (INIS)

Reichel, Christian; Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W.; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

2015-01-01

Passivated contacts (poly-Si/SiO x /c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF 2 ), the ion implantation dose (5 × 10 14  cm −2 to 1 × 10 16  cm −2 ), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV oc ) of 725 and 720 mV, respectively. For p-type passivated contacts, BF 2 implantations into intrinsic a-Si yield well passivated contacts and allow for iV oc of 690 mV, whereas implanted B gives poor passivation with iV oc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V oc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF 2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V oc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

Passivation of aluminum with alkyl phosphonic acids for biochip applications

Science.gov (United States)

Attavar, Sachin; Diwekar, Mohit; Linford, Matthew R.; Davis, Mark A.; Blair, Steve

2010-09-01

Self-assembly of decylphosphonic acid (DPA) and octadecylphosphonic acid (ODPA) was studied on aluminum films using XPS, ToF-SIMS and surface wettability. Modified aluminum films were tested for passivation against silanization and subsequent oligonucleotide attachment. Passivation ratios of at least 450:1 compared to unprotected aluminum were obtained, as quantified by attachment of radio-labeled oligos.

Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

Science.gov (United States)

Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

2018-06-01

The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

Thermal Stress Behavior of Micro- and Nano-Size Aluminum Films

International Nuclear Information System (INIS)

Hanabusa, T.; Kusaka, K.; Nishida, M.

2008-01-01

In-situ observation of thermal stresses in thin films deposited on silicon substrate was made by X-ray and synchrotron radiation. Specimens prepared in this experiment were micro- and nano-size thin aluminum films with and without passivation film. The thickness of the film was 1 micrometer for micro-size films and 10, 20 and 50 nanometer for nano-size films. The stress measurement in micro-size films was made by X-ray radiation whereas the measurement of nano-size films was made by synchrotron radiation. Residual stress measurement revealed tensile stresses in all as-deposited films. Thermal stresses were measured in a series of heating- and cooling-stage. Thermal stress behavior of micro-size films revealed hysteresis loop during a heating and cooling process. The width of a hysteresis loop was larger in passivated film that unpassivated film. No hysteresis loops were observed in nano-size films with SiO 2 passivation. Strengthning mechanism in thin films was discussed on a passivation film and a film thickness

Environmental justice: a form of passive revolution and civil society against capitalist system hegemony

Directory of Open Access Journals (Sweden)

Ana Keuly Luz Bezerra

2014-12-01

Full Text Available This article aims to discuss the notion of civil society, hegemony and passive revolution in the thoughts of Antonio Gramsci and its relation to the need for implementation of environmental justice. The concept of civil society in Gramsci's view appears as a group of organisms commonly designated as “private”, formed by the organizations responsible for drafting much as the dissemination of ideologies, so understanding the school system, the churches, trade unions, political parties, professional organizations, material culture of the organization, while the concept of hegemony arises within the Marxist tradition as a response to new social settings. Despite its origins in the Russian social democracy and to be present at the thought of Lenin, this concept was developed in a more elaborated by Gramsci. The concept of “passive revolution”, “revolution–restoration” or “evolutionism” is crucial category that Gramsci uses to understand the formation of the modern bourgeois state in Italy (starting from the facts of the Risorgiment o, which culminated in the national unification, to define the fundamental features of the passage of Italian capitalism to step monopoly capitalism and to point fascism as a form of “passive revolution”. It is from this understanding that we use the concept of “passive revolution” to discuss pratics the principles of environmental justice, given that this concept applies to many episodes of the story, as well as more generally, the transition from the industrial model capitalist development of the capitalist system of sustainable development. It consists in a literature review from the work of Gramsci, where it can be concluded that the movements that call for environmental justice in Brazil and the world, mitigated by civil society through a process of passive revolution, based on the insertion of dignity human and the environment as key goals of the state, propose a new model of sustainable

Characterization of oxide films formed on steels in a BWR environment

International Nuclear Information System (INIS)

Honda, Takashi; Ohashi, Kenya; Kashimura, Eiji; Furutani, Yasumasa

1988-01-01

Environmental effects on corrosion bahaviors and properties of oxide films were evaluated for austenitic stainless and carbon steels in high-temperature water simulating a Boiling Water Reactor condition. The existence ratios of Cr and OH - in oxide films formed on stainless steel decreased and those of Fe, Ni and O 2- increased with increases of temperature and dissolved oxygen concentration. Changes of pH in the test region did not affect the composition of these species. These results indicated that Cr tended to combine with OH - , i.e., Cr existed as hydroxides or oxyhydroxides. Further, Fe and Ni tended to form spinel type oxides, which were indentified by XRD. In addition, the corrosion resistance of stainless steel was higher than that of carbon steel in all environments. The protectivity of magnetite films on carbon steel increased with temperature, dissolved oxygen concentration and pH. However, Ni ferrite, formed on stainless steel, further improved the corrosion resistance under such conditions. On the other hand, as the solubility of magnetite increased with decreases in the above mentioned factors, the corrosion resistance of carbon steel decreased. But, even under such conditions Cr, contained in stainless steel, tended to form stable films and suppressed corrosion. (author)

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

International Nuclear Information System (INIS)

Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

2008-01-01

CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

Anodic films grown on magnesium and magnesium alloys in fluoride solutions

Energy Technology Data Exchange (ETDEWEB)

Ono, S. [Dept. of Applied Chemistry, Kogakuin Univ., Tokyo (Japan); Masuko, N. [Dept. of Metallurgical Engineering, Chiba Inst. of Tech., Narashino, Chiba (Japan)

2003-07-01

Formation behavior of anodic oxide films on magnesium in fluoride electrolytes was investigated with attention to the effects of anodizing voltage and aluminum content. In the range of voltage between 2 V and 100 V, porous film was formed in alkaline fluoride solution associated with high current density at around 5 V and at breakdown voltage. The critical voltage of breakdown to allow maximum current flow was approximately 60 V and relatively independent on substrate purity. The films formed at breakdown voltage showed a lava-like porous structure similar to those obtained on aluminum and other valve metals. Barrier films or semi-barrier films, which were composed of hydrated outer layer and relatively dense inner layer, were formed at the other voltages. In the case of AZ91D, the critical voltage increased to 70 V and peculiar phenomenon at 5 V was not observed, so that only barrier films were formed at less than the breakdown voltage. These phenomena can be explained by the effects of aluminum incorporation into the film to prevent dissolution and to promote passivation of magnesium. The depth profiles of constituent elements showed that aluminum distributed in whole depth of the film. (orig.)

Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Jingnan Tong

2018-02-01

Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel.

Science.gov (United States)

Kim, Ki-Tae; Lee, Jung-Hee; Kim, Young-Sik

2017-06-27

Stainless steels have good corrosion resistance in many environments but welding or aging can decrease their resistance. This work focused on the effect of aging time and ultrasonic nano-crystal surface modification on the passivation behavior of 316L stainless steel. In the case of slightly sensitized 316L stainless steel, increasing the aging time drastically decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film, even though aging did not form chromium carbide and a chromium depletion zone. This behavior is due to the micro-galvanic corrosion between the matrix and carbon segregated area, and this shows the importance of carbon segregation in grain boundaries to the pitting corrosion resistance of stainless steel, in addition to the formation of the chromium depletion zone. UNSM (Ultrasonic Nano Crystal Surface Modification)-treatment to the slightly sensitized 316L stainless steel increased the pitting potential, decreased the passive current density, and increased the resistance of the passive film. However, in the case of heavily sensitized 316L stainless steel, UNSM-treatment decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film. This behavior is due to the dual effects of the UNSM-treatment. That is, the UNSM-treatment reduced the carbon segregation, regardless of whether the stainless steel 316L was slightly or heavily sensitized. However, since this treatment made mechanical flaws in the outer surface in the case of the heavily sensitized stainless steel, UNSM-treatment may eliminate chromium carbide, and this flaw can be a pitting initiation site, and therefore decrease the pitting corrosion resistance.

Radon-film-badges by solid radiators to complement track detector-based radon monitors

International Nuclear Information System (INIS)

Tommasino, L.; Tommasino, M.C.; Viola, P.

2009-01-01

Existing passive radon monitors, based on track detectors, present many shortcomings, such as a limited response sensitivity for one-week-indoor measurements and a limited response linearity for the assessment of large radon exposures indoors, in thermal spa, in caves, and in soil. Moreover, for in-soil measurements these monitors are too bulky and are often conducive to wrong results. For what concerns the radon-in-water measurements, they are just not suitable. A new generation of passive radon monitors is introduced in this paper, which are very similar to the compact badges used in neutron- and gamma-dosimetry and will be referred to as radon-film-badges. These film-badges are formed by thin-film radiators with suitable radon-sorption characteristics, facing track detectors. The key strategy adopted for these radiators is to exploit an equilibrium type of radon sorption in solids. Even though this new generation of passive monitors is at its infancy, it appears already clear that said monitors make it finally possible to overcome most of the shortcomings of existing passive radon monitors. These devices are uniquely simple and can be easily acquired by any existing radon service to complement their presently used passive radon monitors with little or no effort.

Effect of aluminium on the passivation of zinc–aluminium alloys in artificial seawater at 80 °C

International Nuclear Information System (INIS)

Kaewmaneekul, Tanapat; Lothongkum, Gobboon

2013-01-01

Highlights: ► Pure Zn and Zn–Al alloys passivate and depassivate in artificial seawater. ► Al retards passivation of Zn–Al alloys. ► Passive film composes of the inner film and the outer charge transfer layers. ► Al increases current density but decreases corrosion resistance of passive films. ► Al increases the electrical conductivity and the capacitance of the films. - Abstract: The effect of Al (0.15, 0.3 and 1.0 wt.%) on the passivation of Zn–Al alloys in artificial seawater at 80 °C is investigated by electrochemical measurements, scanning electron microscopy (SEM) and X-ray diffraction (XRD). It is found that the presence of Al in Zn–Al alloys can retard passivation. Potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) measurements show that Al increases the current density but decreases the corrosion resistance of passive films, respectively. Mott-Schottky analysis reveals that Al increases the electrical conductivity and the capacitance of the films. Passivation of Zn–Al alloys occurs in artificial seawater when the immersion time is between 120 and 288 h, due to the presence of various Zn and Al protective compounds at the surfaces. Depassivation occurs when the immersion time is between 288 and 720 h, probably due to the decrease of solution pH and the Cl − penetration mechanism.

Evaluation of Enzymatically Modified Soy Protein Isolate Film Forming Solution and Film at Different Manufacturing Conditions.

Science.gov (United States)

Mohammad Zadeh, Elham; O'Keefe, Sean F; Kim, Young-Teck; Cho, Jin-Hun

2018-04-01

The effects of transglutaminase on soy protein isolate (SPI) film forming solution and films were investigated by rheological behavior and physicochemical properties based on different manufacturing conditions (enzyme treatments, enzyme incubation times, and protein denaturation temperatures). Enzymatic crosslinking reaction and changes in molecular weight distribution were confirmed by viscosity measurement and SDS-PAGE, respectively, compared to 2 controls: the nonenzyme treated and the deactivated enzyme treated. Films treated with both the enzyme and the deactivated enzyme showed significant increase in tensile strength (TS), percent elongation (%E), and initial contact angle of films compared to the nonenzyme control film due to the bulk stabilizers in the commercial enzyme. Water absorption property, protein solubility, Fourier transform infrared (FTIR) and X-ray diffraction (XRD) spectroscopy revealed that enzyme treated SPI film matrix in the molecular structure level, resulted in the changes in physicochemical properties. Based on our observation, the enzymatic treatment at appropriate conditions is a practical and feasible way to control the physical properties of protein based biopolymeric film for many different scientific and industrial areas. Enzymes can make bridges selectively among different amino acids in the structure of protein matrix. Therefore, protein network is changed after enzyme treatment. The behavior of biopolymeric materials is dependent on the network structure to be suitable in different applications such as bioplastics applied in food and pharmaceutical products. In the current research, transglutaminase, as an enzyme, applied in soy protein matrix in different types of forms, activated and deactivated, and different preparation conditions to investigate its effects on different properties of the new bioplastic film. © 2018 Institute of Food Technologists®.

Chitosan-Assisted Crystallization and Film Forming of Perovskite Crystals through Biomineralization.

Science.gov (United States)

Yang, Yang; Sun, Chen; Yip, Hin-Lap; Sun, Runcang; Wang, Xiaohui

2016-03-18

Biomimetic mineralization is a powerful approach for the synthesis of advanced composite materials with hierarchical organization and controlled structure. Herein, chitosan was introduced into a perovskite precursor solution as a biopolymer additive to control the crystallization and to improve the morphology and film-forming properties of a perovskite film by way of biomineralization. The biopolymer additive was able to control the size and morphology of the perovskite crystals and helped to form smooth films. The mechanism of chitosan-mediated nucleation and growth of the perovskite crystals was explored. As a possible application, the chitosan-perovskite composite film was introduced into a planar heterojunction solar cell and increased power conversion efficiency relative to that observed for the pristine perovskite film was achieved. The biomimetic mineralization method proposed in this study provides an alternative way of preparing perovskite crystals with well-controlled morphology and properties and extends the applications of perovskite crystals in photoelectronic fields, including planar-heterojunction solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selective laser pyrolysis of metallo-organics as a method of forming patterned thin film superconductors

International Nuclear Information System (INIS)

Mantese, J.V.; Catalan, A.B.; Sell, J.A.; Meyer, M.S.; Mance, A.M.

1990-01-01

This patent describes a method for forming patterned films of superconductive materials forming a solution from the neodecanoates of yttrium, barium and copper. The neodecanoates forming an oxide mixture exhibiting superconductive properties upon subsequent thermal decompositions wherein the oxide mixture is characterized by a ratio of yttrium:barium:copper of approximately 1:2:4, the solution comprising an organic solvent such as xylene; adding to the solution an appropriate dye, depositing a film of the solution having the dye onto a strontium titanate substrate; exposing selective regions of the film with an Argon laser emitting the wavelength of light, such that the exposed regions of the film become insoluble in the xylene; immersing the film into the xylene so that the soluble; unexposed regions of the film are removed from the substrate; heating the film to thermally decompose the neodecanoates into a film containing yttrium, barium and copper oxides; to promote recrystallization and grain growth of the metal oxides within the film and induce a change therein by which the film exhibits superconducting properties

Stable High-Performance Perovskite Solar Cells via Grain Boundary Passivation

KAUST Repository

Niu, Tianqi

2018-03-12

The trap states at grain boundaries (GBs) within polycrystalline perovskite films deteriorate their optoelectronic properties, making GB engineering particularly important for stable high-performance optoelectronic devices. It is demonstrated that trap states within bulk films can be effectively passivated by semiconducting molecules with Lewis acid or base functional groups. The perovskite crystallization kinetics are studied using in situ synchrotron-based grazing-incidence X-ray scattering to explore the film formation mechanism. A model of the passivation mechanism is proposed to understand how the molecules simultaneously passivate the Pb-I antisite defects and vacancies created by under-coordinated Pb atoms. In addition, it also explains how the energy offset between the semiconducting molecules and the perovskite influences trap states and intergrain carrier transport. The superior optoelectronic properties are attained by optimizing the molecular passivation treatments. These benefits are translated into significant enhancements of the power conversion efficiencies to 19.3%, as well as improved environmental and thermal stability of solar cells. The passivated devices without encapsulation degrade only by ≈13% after 40 d of exposure in 50% relative humidity at room temperature, and only ≈10% after 24 h at 80 °C in controlled environment.

The strength limits of ultra-thin copper films

Energy Technology Data Exchange (ETDEWEB)

Wiederhirn, Guillaume

2007-07-02

Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

Advanced passivation techniques for Si solar cells with high-κ dielectric materials

International Nuclear Information System (INIS)

Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

2014-01-01

Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al 2 O 3 film has been found to provide negative fixed charge (−6.4 × 10 11  cm −2 ), whereas HfO 2 film provides positive fixed charge (3.2 × 10 12  cm −2 ). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO 2 film would provide better passivation properties than that of the ALD-Al 2 O 3 film in this research work.

Sorbent Film-Coated Passive Samplers for Explosives Vapour Detection Part A: Materials Optimisation and Integration with Analytical Technologies.

Science.gov (United States)

McEneff, Gillian L; Murphy, Bronagh; Webb, Tony; Wood, Dan; Irlam, Rachel; Mills, Jim; Green, David; Barron, Leon P

2018-04-11

A new thin-film passive sampler is presented as a low resource dependent and discrete continuous monitoring solution for explosives-related vapours. Using 15 mid-high vapour pressure explosives-related compounds as probes, combinations of four thermally stable substrates and six film-based sorbents were evaluated. Meta-aramid and phenylene oxide-based materials showed the best recoveries from small voids (~70%). Analysis was performed using liquid chromatography-high resolution accurate mass spectrometry which also enabled tentative identification of new targets from the acquired data. Preliminary uptake kinetics experiments revealed plateau concentrations on the device were reached between 3-5 days. Compounds used in improvised explosive devices, such as triacetone triperoxide, were detected within 1 hour and were stably retained by the sampler for up to 7 days. Sampler performance was consistent for 22 months after manufacture. Lastly, its direct integration with currently in-service explosives screening equipment including ion mobility spectrometry and thermal desorption mass spectrometry is presented. Following exposure to several open environments and targeted interferences, sampler performance was subsequently assessed and potential interferences identified. High-security building and area monitoring for concealed explosives using such cost-effective and discrete passive samplers can add extra assurance to search routines while minimising any additional burden on personnel or everyday site operation.

Enzymatic effect of a bio-film on corrosion of stainless steels immersed in natural seawater

International Nuclear Information System (INIS)

L'Hostis, V.

2002-09-01

Immersion of stainless steels in natural seawater leads to an ennoblement of their free corrosion potential (Ecor) with time. This evolution is linked to colonization of surface by bacteria, forming a bio-film. Literature synthesis has showed common points between proposed mechanisms, like a modification of cathodic reactions, and importance of hydrogen peroxide, but also differences, as acidity inside bio-films, or chemical composition of the passive layer, or enzymes present inside bio-films. The aim of the study was to precise these hypothesis, and finally mechanisms which leads to increase of Ecor. Experiments with addition of enzymes (glucose oxidase) have been performed and have lead to reproduce the electrochemical behaviour of stainless steels in natural seawater, including the cathodic behaviour. Study of composition of passive film and its semi-conducting properties, analysed respectively by XPS and Mott-Schottky plots, has lead to precise roles of hydrogen peroxide and oxidases. Moreover, study of donor densities of passive film has pointed out the effect of gluconic acid for evolution of cathodic reaction. This enzymatic mechanism has been applied and verified on crevice corrosion, and has been extended to other metallic materials, and other enzymes. (author)

Unusual Passivation Ability of Superconcentrated Electrolytes toward Hard Carbon Negative Electrodes in Sodium-Ion Batteries.

Science.gov (United States)

Takada, Koji; Yamada, Yuki; Watanabe, Eriko; Wang, Jianhui; Sodeyama, Keitaro; Tateyama, Yoshitaka; Hirata, Kazuhisa; Kawase, Takeo; Yamada, Atsuo

2017-10-04

The passivation of negative electrodes is key to achieving prolonged charge-discharge cycling with Na-ion batteries. Here, we report the unusual passivation ability of superconcentrated Na-salt electrolytes. For example, a 50 mol % sodium bis(fluorosulfonyl)amide (NaFSA)/succinonitrile (SN) electrolyte enables highly reversible Na + insertion into a hard carbon negative electrode without any electrolyte additive, functional binder, or electrode pretreatment. Importantly, an anion-derived passivation film is formed via preferential reduction of the anion upon charging, which can effectively suppress further electrolyte reduction. As a structural characteristic of the electrolyte, most anions are coordinated to multiple Na + cations at high concentration, which shifts the lowest unoccupied molecular orbitals of the anions downward, resulting in preferential anion reduction. The present work provides a new understanding of the passivation mechanism with respect to the coordination state of the anion.

Wireless passive radiation sensor

Science.gov (United States)

Pfeifer, Kent B; Rumpf, Arthur N; Yelton, William G; Limmer, Steven J

2013-12-03

A novel measurement technique is employed using surface acoustic wave (SAW) devices, passive RF, and radiation-sensitive films to provide a wireless passive radiation sensor that requires no batteries, outside wiring, or regular maintenance. The sensor is small (<1 cm.sup.2), physically robust, and will operate unattended for decades. In addition, the sensor can be insensitive to measurement position and read distance due to a novel self-referencing technique eliminating the need to measure absolute responses that are dependent on RF transmitter location and power.

Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media.

Directory of Open Access Journals (Sweden)

Khadijah M Emran

Full Text Available The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9and Fe49Co49V2 (VX50 (at.%, were studied using electrochemical techniques including electrochemical frequency modulation (EFM, electrochemical impedance spectroscopy (EIS and cyclic polarization (CP measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM and atomic force microscopy (AFM. The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution.

Iron nitride films formed in a r. f. glow discharge

Energy Technology Data Exchange (ETDEWEB)

Li, J.L.; O' Keefe, T.J.; James, W.J. (Depts. of Chemistry and Metallurgical Engineering and Graduate Center for Materials Research, Univ. of Missouri-Rolla (United States))

1992-12-30

Fe[sub 2]N and Fe[sub 3]N films were deposited on an r.f. glow discharge by introducing Fe(CO)[sub 5] and NH[sub 3] into the reactor. The iron nitride films thus formed exhibited sheet conductivities in the range of 10[sup 2]-10[sup 3] ohm[sup -1] cm[sup -1]. They exhibited microhardness ranging from 578 to 659 kg mm[sup -2] on glass slides. The effects of the deposition temperature and the nature of the substrate material on the structure and composition of the films were investigated. An Fe[sub 4]N layer was formed on iron substrates at 400degC in the plasma nitriding process using NH[sub 3] as the gas source. The Fe[sub 4]N layer exhibited a microhardness of 230 kg mm[sup -2]. The effect of the temperature on the formation of the nitrided layer is discussed. (orig.).

Formulation and in vitro/in vivo evaluation of chitosan-based film forming gel containing ketoprofen.

Science.gov (United States)

Oh, Dong-Won; Kang, Ji-Hyun; Lee, Hyo-Jung; Han, Sang-Duk; Kang, Min-Hyung; Kwon, Yie-Hyuk; Jun, Joon-Ho; Kim, Dong-Wook; Rhee, Yun-Seok; Kim, Ju-Young; Park, Eun-Seok; Park, Chung-Woong

2017-11-01

The film forming gel, adhered to skin surfaces upon application and formed a film, has an advantage onto skin to provide protection and continuous drug release to the application site. This study aimed to prepare a chitosan-based film forming gel containing ketoprofen (CbFG) and to evaluate the CbFG and film from CbFG (CbFG-film). CbFG were prepared with chitosan, lactic acid and various skin permeation enhancers. The physicochemical characteristics were evaluated by texture analysis, viscometry, SEM, DSC, XRD and FT-IR. To identify the mechanism of skin permeation, in vitro skin permeation study was conducted with a Franz diffusion cell and excised SD-rat and hairless mouse dorsal skin. In vivo efficacy assessment in mono-iodoacetate (MIA)-induced rheumatoid arthritis animal model was also conducted. CbFG was successfully prepared and, after applying CbFG to the excised rat dorsal skin, the CbFG-film was also formed well. The physicochemical characteristics of CbFG and CbFG-film could be explained by the grafting of oleic acid onto chitosan in the absence of catalysts. In addition, CbFG containing oleic acid had a higher skin permeation rate in comparison with any other candidate enhancers. The in vivo efficacy study also confirmed significant anti-inflammatory and analgesic effects. Consequently, we report the successful preparation of chitosan-based film forming gel containing ketoprofen with excellent mechanical properties, skin permeation and anti-inflammatory and analgesic effects.

Passive and transpassive behaviour of CoCrMo in simulated biological solutions

International Nuclear Information System (INIS)

Hodgson, A.W.E.; Kurz, S.; Virtanen, S.; Fervel, V.; Olsson, C.-O.A.; Mischler, S.

2004-01-01

In this work, the behaviour of a CoCrMo alloy under simulated body conditions was investigated. More specifically, the electrochemical properties of the alloy and the relevant mechanisms in the passive and transpassive states were studied in detail. Electrochemical techniques such as potentiodynamic and potentiostatic polarisation, cyclic voltammetry, rotating disc electrode and electrochemical impedance spectroscopy were employed. Further, ex situ X-ray photoelectron spectroscopy analysis of the passive films was carried out. A good correlation between the results obtained from all the experimental techniques was achieved. Overall, it was found that the passive film on CoCrMo changed in composition and thickness with both potential and time. The passive behaviour of the CrCrMo alloy is due to a formation an oxide film highly enriched with Cr (∼90% Cr oxides) on the alloy surface. The passive and transpassive behaviour of the alloy is hence dominated by the alloying element Cr. In the transpassive region, strong thickening of the oxide film takes place, combined with a change in the composition of the film, and strongly increased dissolution rate. In the transpassive region, all alloying elements dissolve according to the composition of the alloy. The metal ion release is also very strongly enhanced by cyclic variation of the potential between reducing and oxidizing conditions. In this case, during activation/repassivation cycles, cobalt dissolution is greater than expected from the composition of the alloy. Therefore, active dissolution behaviour is mainly dominated by the alloying element Co

Specific characteristics of radon passive/open model detectors compared to passive/close and charcoal devices

International Nuclear Information System (INIS)

Andru, J.

1990-01-01

All passive/open detectors, also called Unfiltered alpha Track Detectors (UTDs), are built around KODAK LR115 film, only material sensitive to all ambient alpha particles and capable to work in open mode. The principle of open detectors is not new. They are largely used worldwide, often by scientists (in France, Italy, Japan, Norway, Sweden etc.). However, their particular functioning needs some explanation and some reminders. This paper is more aimed to discuss generalities than details of calculation. The estimation of the Potential Alpha Energy (PAE) concentration is about 4 times better than that from other passive detectors and it includes thoron progeny. The film is more sensitive to ambient decay products than it is to Radon as track count is higher for alpha's of greater initial energy

Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation

NARCIS (Netherlands)

Gielis, J.J.H.; Verlaan, V.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.; Terlinden, N.M.

2009-01-01

Recently, it was shown that Al2O3 thin films synthesized by (plasmaassisted) atomic layer deposition (ALD) provide excellent surface passivation of n, p and p+ type c-Si as highly relevant for c-Si photovoltaics. It was found that a large negative fixed charge density (up to 1013 cm-2) in the Al2O3

Passivity of alloy C-22 in NaCl solutions

International Nuclear Information System (INIS)

Rodriguez, Martin A.; Carranza, Ricardo M.

2004-01-01

Alloy C-22 has been proposed as the corrosion resistant barrier of high-level waste nuclear containers. This alloy must be resistant to corrosion in multi-ionic solutions for a period of time as long as 10,000 years. The aim of the present work was to study the corrosion behavior of alloy C-22 in NaCl solutions. General and crevice corrosion were studied by means of electrochemical techniques. Open circuit potential was measured over the time, electrochemical impedance spectroscopy (EIS) measurements were carried out at open circuit and passivity potentials, as well as cyclic potentiodynamic polarization curves. Corrosion rates obtained by EIS measurements were acceptable for a waste nuclear container ( P ) values increased with open circuit potential and polarization time at constant potential. This was attributed to an increase in oxide film thickness and its aging respectively. The passive oxide form on alloy C-22 at the studied conditions presented a n-type semiconductor behavior in the passive potential range. Repassivation potential values (E R1 ) were determined for alloy C-22 at the studied conditions using PCA probes. (author) [es

Stable High-Performance Perovskite Solar Cells via Grain Boundary Passivation.

Science.gov (United States)

Niu, Tianqi; Lu, Jing; Munir, Rahim; Li, Jianbo; Barrit, Dounya; Zhang, Xu; Hu, Hanlin; Yang, Zhou; Amassian, Aram; Zhao, Kui; Liu, Shengzhong Frank

2018-04-01

The trap states at grain boundaries (GBs) within polycrystalline perovskite films deteriorate their optoelectronic properties, making GB engineering particularly important for stable high-performance optoelectronic devices. It is demonstrated that trap states within bulk films can be effectively passivated by semiconducting molecules with Lewis acid or base functional groups. The perovskite crystallization kinetics are studied using in situ synchrotron-based grazing-incidence X-ray scattering to explore the film formation mechanism. A model of the passivation mechanism is proposed to understand how the molecules simultaneously passivate the Pb-I antisite defects and vacancies created by under-coordinated Pb atoms. In addition, it also explains how the energy offset between the semiconducting molecules and the perovskite influences trap states and intergrain carrier transport. The superior optoelectronic properties are attained by optimizing the molecular passivation treatments. These benefits are translated into significant enhancements of the power conversion efficiencies to 19.3%, as well as improved environmental and thermal stability of solar cells. The passivated devices without encapsulation degrade only by ≈13% after 40 d of exposure in 50% relative humidity at room temperature, and only ≈10% after 24 h at 80 °C in controlled environment. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of applied potential on passivation and erosion–corrosion of a Fe-based amorphous metallic coating under slurry impingement

International Nuclear Information System (INIS)

Zheng, Z.B.; Zheng, Y.G.; Sun, W.H.; Wang, J.Q.

2014-01-01

Highlights: • The passive current density of coating increases with the increasing potential. • Preferential dissolution of high-valence oxides happens at high applied potential. • More chlorides exist in the passive film at high film formation potential. • Critical flow velocity under impingement is related to resistance of passive film. - Abstract: The passive behaviour and erosion–corrosion behaviour of a HVOF sprayed Fe-based amorphous metallic coating have been investigated in 3.5 wt.% NaCl solution by using potentiostatic polarisation, X-ray photoelectron spectroscopy and Mott–Schottky analysis. The fact that passive current density increased with rising potential might result from the preferential dissolution of high-valence oxides and the existence of more chlorides at a higher potential. The critical flow velocity decreased with rising potential because of the lower resistance of passive film at a higher potential. The reason why passive current density changed under jet impingement was discussed by a simple formula

Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Seok Hwan Jeong

2018-03-01

Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

Surface Modification of Sputtered Ga. In. 5 Sb hin Films | Ishu ...

African Journals Online (AJOL)

This can be interpreted as reduction in surface states induced by passivating oxide formed after Ru and Pt treatment. Electrical characterization of the film viz. Vander Pauw resistivity, Hall mobility etc. measurements also showed improved result compared to untreated and Pd treated surface and is been reported. Finally

Graph theory and binary alloys passivated by nickel

International Nuclear Information System (INIS)

McCafferty, E.

2005-01-01

The passivity of a nickel binary alloy is considered in terms of a network of -Ni-O-Ni- bridges in the oxide film, where Ni is the component of the binary alloy which produces passivity. The structure of the oxide is represented by a mathematical graph, and graph theory is used to calculate the connectivity of the oxide, given by the product of the number of edges in the graph and the Randic index. A stochastic calculation is employed to insert ions of the second metal into the oxide film so as to disrupt the connectivity of the -Ni-O-Ni- network. This disruption occurs at a critical ionic concentration of the oxide film. Mathematical relationships are developed for the introduction of a general ion B +n into the oxide film, and critical ionic compositions are calculated for oxide films on the nickel binary alloys. The notation B refers to any metal B which produces B +n ions in the oxide film, where +n is the oxidation number of the ion. The results of this analysis for Fe-Ni and Cu-Ni binary alloys are in good agreement with experimental results

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

Science.gov (United States)

Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

2018-01-31

The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

Are zirconia corrosion films a form of partially stabilised zirconia (PSZ)?

International Nuclear Information System (INIS)

Cox, B.

1987-03-01

The problem of understanding the development of porosity in a zirconium oxide film still under biaxial compression is discussed. The oxide film is compared with partially stabilised zirconia (PSZ) where stress induced transformation of tetragonal zirconia has been observed to lead to microcracking of the structure. The similarities between PSZ and the thermal oxide films formed on zirconium alloys are enumerated, and an hypothesis is proposed that can both explain the penetration of pores or microcracks in oxides on Zircaloy-2 to a point very close to the oxide/metal interface, and explain the observation that such a phenomenon does not occur in oxide films on Zr-2.5%Nb. This hypothesis could be tested by laser Raman spectroscopy on oxide films during growth at elevated temperatures. 87 refs

High-Tc film development for electronic applications

International Nuclear Information System (INIS)

Talvacchio, J.; Wagner, G.R.

1990-01-01

In this paper, the authors describe the requirements and status of high-T c superconductor (HTS) films for the development of electronic applications with an emphasis on passive microwave devices. One of the most general requirements, a low rf Surface resistance relative to Cu, has been achieved in films of several different HTS compounds. However the best films, made of YBa 2 Cu 3 O 7 (YBCO) by any one of several techniques, have in common a residual surface resistance that is much greater than predicted by conventional superconductivity theory. Improvement in films is also limited by the current size and selection of single-crystal substrate materials. Other issues that must be resolved to develop a full integrated circuit technology for HTS are substrate heating during film deposition, deposited epitaxial insulators, and determination of which interfaces in a multilevel circuit must be formed in situ

Investigation of steel passivation in inhibited cooling waters by electrochemical impedance spectroscopy

International Nuclear Information System (INIS)

Gusmano, G.; Montesperelli, G.; Traversa, E.

1992-01-01

The corrosion of mild steel, which is one of the main problems in industrial cooling equipments, is greatly influenced by total alkalinity, pH and oxygen concentration. The low concentration of oxygen present in natural waters and the low solubility of CaCO 3 greatly affect the passivation mechanism, hindering the growth of a compact and protective film. The all-organic inhibitors, which have the property of supersaturating waters with CaCO 3 , overcome this problem. In this paper the electrical characteristics of the protective film formed by this kind of inhibitors in the presence of different levels of carbonatic alkalinity and at different pH values is studied by Electrochemical Impedance Spectroscopy

Surface Morphology Diagram for Cylinder-Forming Block Copolymer Thin Films

International Nuclear Information System (INIS)

Zhang, Xiaohua; Berry, Brian C.; Yager, Kevin G.; Kim, Sangcheol; Jones, Ronald L.; Satija, Sushil; Pickel, Deanna L.; Douglas, Jack F.; Karim, Alamgir

2008-01-01

We investigate the effect of annealing temperature (T), film thickness (hf) on the surface morphology of flow coated films of a cylinder forming block copolymer, poly (styrene-block-methyl methacrylate) (PS-b-PMMA). Surface morphology transitions from a perpendicular to a parallel cylinder orientation with respect to the substrate with increasing hf are observed in these model 'frustrated-interaction' films where the substrate interaction is preferential for one of the blocks (PMMA) and nearly neutral for the other interface (polymer-air). In these films a transition occurs from cylinders oriented parallel to the substrate to a mixed or 'hybrid' state where the two orientations coexist followed by a transition to cylinders oriented perpendicularly to the polymer-air interface for larger hf. The characteristic values of hf defining these surface morphological transitions depend on T and we construct a surface morphology diagram as a function of hf and T. The surface morphology diagram is found to depend on the method of film formation (flow coated versus spun cast films) so non-equilibrium effects evidently have a large effect on the surface pattern morphology. In particular, the residual solvent within the film (quantified by neutron reflectivity measurements) in the context of physics of glass-formation can have a large effect on the surface morphology diagram

Resistivity and Passivity Characterization of Ni-Base Glassy Alloys in NaOH Media

Directory of Open Access Journals (Sweden)

Khadijah M. Emran

2018-01-01

Full Text Available Resistivity and passivation behavior of two Ni-base bulk metallic glasses, with the nominal composition of Ni70Cr21Si0.5B0.5P8C ≤ 0.1Co ≤ 1Fe ≤ 1 (VZ1 and Ni72.65Cr7.3-Si6.7B2.15C ≤ 0.06Fe8.2Mo3 (VZ2, in various concentrations of NaOH solutions were studied. The investigations involved cyclic polarization (CP, electrochemical impedance spectroscopy (EIS, and electrochemical frequency modulation (EFM methods. Cyclic polarization measurements showed spontaneous passivation for both Ni-base glassy alloys at all alkaline concentrations, due to the presence of chromium as an alloying element that formed an oxide film on the alloy surface. The EIS analysis showed that the passive layers grown on the two Ni-base glassy alloy surfaces are formed by a double oxide layer structure. Scanning electron microscope (SEM examinations of the electrode surface showed Cr, Ni, Fe, and O rich corrosion products that reduced the extent of corrosion damage. Atomic force microscopy (AFM imaging technique was used to evaluate the topographic and morphologic features of surface layers formed on the surface of the alloys.

Advanced Passivation Technology and Loss Factor Minimization for High Efficiency Solar Cells.

Science.gov (United States)

Park, Cheolmin; Balaji, Nagarajan; Jung, Sungwook; Choi, Jaewoo; Ju, Minkyu; Lee, Seunghwan; Kim, Jungmo; Bong, Sungjae; Chung, Sungyoun; Lee, Youn-Jung; Yi, Junsin

2015-10-01

High-efficiency Si solar cells have attracted great attention from researchers, scientists, photovoltaic (PV) industry engineers for the past few decades. With thin wafers, surface passivation becomes necessary to increase the solar cells efficiency by overcoming several induced effects due to associated crystal defects and impurities of c-Si. This paper discusses suitable passivation schemes and optimization techniques to achieve high efficiency at low cost. SiNx film was optimized with higher transmittance and reduced recombination for using as an effective antireflection and passivation layer to attain higher solar cell efficiencies. The higher band gap increased the transmittance with reduced defect states that persisted at 1.68 and 1.80 eV in SiNx films. The thermal stability of SiN (Si-rich)/SiN (N-rich) stacks was also studied. Si-rich SiN with a refractive index of 2.7 was used as a passivation layer and N-rich SiN with a refractive index of 2.1 was used for thermal stability. An implied Voc of 720 mV with a stable lifetime of 1.5 ms was obtained for the stack layer after firing. Si-N and Si-H bonding concentration was analyzed by FTIR for the correlation of thermally stable passivation mechanism. The passivation property of spin coated Al2O3 films was also investigated. An effective surface recombination velocity of 55 cm/s with a high density of negative fixed charges (Qf) on the order of 9 x 10(11) cm(-2) was detected in Al2O3 films.

Mechanism of growth, composition and structure of oxide films formed on ferrous alloys in molten salt electrolytes - a review

International Nuclear Information System (INIS)

Tzvetkoff, Tz.; Kolchakov, J.

2004-01-01

The growth kinetics, chemical composition and structure of scales formed during corrosion of Fe and its alloys in molten salts are reviewed. Special attention is paid to the effect of the composition of the molten salt mixture and the gas atmosphere on the stability and protective ability of corrosion layers. First, the thermodynamical background of the corrosion and oxidation of Fe-base engineering materials in molten salt media is briefly commented. A concise review of the growth kinetics of passivating oxide films is also presented. These two introductory chapters serve as a guide for the extensive survey of the growth mechanism, nature and properties of oxide and related scales on ferrous alloys in a range of molten electrolytes - chlorides, nitrates, sulphates, carbonates, hydroxides and mixtures thereof in gas atmospheres containing O 2 , CO 2 , SO 2 , SO 3 and HCl

Main principles of passive devices based on graphene and carbon films in microwave-THz frequency range

Science.gov (United States)

Kuzhir, Polina P.; Paddubskaya, Alesia G.; Volynets, Nadezhda I.; Batrakov, Konstantin G.; Kaplas, Tommi; Lamberti, Patrizia; Kotsilkova, Rumiana; Lambin, Philippe

2017-07-01

The ability of thin conductive films, including graphene, pyrolytic carbon (PyC), graphitic PyC (GrPyC), graphene with graphitic islands (GrI), glassy carbon (GC), and sandwich structures made of all these materials separated by polymer slabs to absorb electromagnetic radiation in microwave-THz frequency range, is discussed. The main physical principles making a basis for high absorption ability of these heterostructures are explained both in the language of electromagnetic theory and using representation of equivalent electrical circuits. The idea of using carbonaceous thin films as the main working elements of passive radiofrequency (RF) devices, such as shields, filters, polarizers, collimators, is proposed theoretically and proved experimentally. The important advantage of PyC, GrI, GrPyC, and GC is that, in contrast to graphene, they either can be easily deposited onto a dielectric substrate or are strong enough to allow their transfer from the catalytic substrate without a shuttle polymer layer. This opens a new avenue toward the development of a scalable protocol for cost-efficient production of ultralight electromagnetic shields that can be transferred to commercial applications. A robust design via finite-element method and design of experiment for RF devices based on carbon/graphene films and sandwiches is also discussed in the context of virtual prototyping.

Effect of small addition of Mn on the passivation of Zn in 0.1 M NaOH solution

International Nuclear Information System (INIS)

Shang Xiuling; Zhang Bo; Han Enhou; Ke Wei

2011-01-01

The passivation of pure Zn (99.995 wt%) and Zn-0.4Mn (0.4 wt% Mn) alloy in a deaerated 0.1 M NaOH solution (pH 12.9) was investigated by electrochemical measurements, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The potentiodynamic polarization and electrochemical impedance measurements show that addition of 0.4 wt% Mn can decrease the passive current density of Zn in the passive region. XPS surface analysis indicates that there is approximately 1.0-2.0 at% Mn 2+ being incorporated into the passive film on Zn-0.4Mn alloy with Mn content being higher in the outer layers. Mott-Schottky analysis shows that the incorporated Mn can decrease concentration of defects in the film. AFM observations disclose that Mn can decrease the grain size of the film. The mechanism by which Mn additions improve the passivity of Zn is that the incorporated Mn can inhibit ions transportation in the film and inhibit its growth. Meanwhile, Mn can also promote the nucleation of Zn oxides and decrease film porosity.

Development of a passive and remote magnetic microsensor with thin-film giant magnetoimpedance element and surface acoustic wave transponder

KAUST Repository

Al Rowais, Hommood; Li, Bodong; Liang, Cai; Green, Scott Ryan; Gianchandani, Yogesh B.; Kosel, Jü rgen

2011-01-01

This paper presents the development of a wireless magnetic field sensor consisting of a three-layer thin-film giant magnetoimpedance sensor and a surface acoustic wave device on one substrate. The goal of this integration is a passive and remotely interrogated sensor that can be easily mass fabricated using standard microfabrication tools. The design parameters, fabrication process, and a model of the integrated sensor are presented together with experimental results of the sensor. © 2011 American Institute of Physics.

Electrical characterization of MIS devices using PECVD SiN{sub x}:H films for application of silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Yoo, Jin-Su; Cho, Jun-Sik; Park, Joo-Hyung; Ahn, Seung-Kyu; Shin, Kee-Shik; Yoon, Kyung-Hoon [Korea Institute of Energy Research, Daejeon (Korea, Republic of); Yi, Jun-Sin [Sungkyunkwan University, Suwon (Korea, Republic of)

2012-07-15

The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition (PECVD), hydrogenated, silicon-nitride (SiN{sub x}:H) thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antireflection coating can be formed. In this work, SiN{sub x}:H thin films were deposited by varying the gas ratio R (=NH{sub 3}/SiH{sub 4}+NH{sub 3}) and were annealed by rapid thermal processing (RTP). Metal-insulator- semiconductor (MIS) devices were fabricated using SiN{sub x}:H thin films as insulator layers and they were analyzed in the temperature range of 100 - 400 K by using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The annealed SiN{sub x}:H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area (156 mm x 156 mm) crystalline-silicon solar cells.

Passive behavior of magnesium alloys (Mg-Zr) containing rare-earth elements in alkaline media

International Nuclear Information System (INIS)

Pinto, R.; Ferreira, M.G.S.; Carmezim, M.J.; Montemor, M.F.

2010-01-01

The passive behavior of magnesium alloys ZK31, EZ33 and WE54 was studied in alkaline media (NaOH - pH 13) in the presence and absence of chloride ions. The electrochemical properties were investigated by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS) and capacitance measurements. X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were employed for the study of the chemical composition and surface morphology of the surface films, respectively. The electrochemical impedance results revealed that the film formed on the surface of the three alloys is characterized by an increasing resistance, which stabilized with time. In the absence of chloride the film resistance was identical for all the three alloys. However, in the presence of chloride, the resistance of the film formed on the EZ33 alloy dropped nearly one order of magnitude comparatively to the other alloys. Generally, in the presence of chloride there was a decrease of the conductive character of the film. The films are homogeneous and, according to the XPS results, the outer layer seemed mainly composed of Mg(OH) 2 and the internal layer composed of MgO, independently of the presence of chloride. The AFM study revealed that the presence of chloride affected film morphology, namely nano-crystallites dimensions and aggregates size that increased.

Surface protection during plasma hydrogenation for acceptor passivation in InP

International Nuclear Information System (INIS)

Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

1990-01-01

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

An ultrathin polymer coating of carboxylate self-assembled monolayer adsorbed on passivated iron to prevent iron corrosion in 0.1 M Na2SO4

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2010-01-01

For preparing an ultrathin two-dimensional polymer coating adsorbed on passivated iron, a 16-hydroxyhexadecanoate ion HO(CH 2 ) 15 CO 2 - self-assembled monolayer (SAM) was modified with 1,2-bis(triethoxysilyl)ethane (C 2 H 5 O) 3 Si(CH 2 ) 2 Si(OC 2 H 5 ) 3 and octadecyltriethoxysilane C 18 H 37 Si(OC 2 H 5 ) 3 . Protection of passivated iron against passive film breakdown and corrosion of iron was investigated by monitoring of the open-circuit potential and repeated polarization measurements in an aerated 0.1 M Na 2 SO 4 solution during immersion for many hours. The time required for passive film breakdown of the polymer-coated electrode was markedly higher in this solution than that of the passivated one, indicating protection of the passive film from breakdown by coverage with the polymer coating. The protective efficiencies of the passive film covered with the coating were extremely high, more than 99.9% in 0.1 M Na 2 SO 4 before the passive film was broken down, showing prominent cooperative suppression of iron corrosion in the solution by coverage with the passive film and polymer coating. The polymer-coated surface was characterized by contact angle measurement and electron-probe microanalysis (EPMA). Prevention of passive film breakdown and iron corrosion for the polymer-coated electrode healed in 0.1 M NaNO 3 was also examined in 0.1 M Na 2 SO 4 .

Study of thin insulating films using secondary ion emission

International Nuclear Information System (INIS)

Hilleret, Noel

1973-01-01

Secondary ion emission from insulating films was investigated using a CASTAING-SLODZIAN ion analyzer. Various different aspects of the problem were studied: charge flow across a silica film; the mobilization of sodium during ion bombardment; consequences of the introduction of oxygen on the emission of secondary ions from some solids; determination of the various characteristics of secondary ion emission from silica, silicon nitride and silicon. An example of measurements made using this type of operation is presented: profiles (concentration as a function of depth) of boron introduced by diffusion or implantation in thin films of silica on silicon or silicon nitride. Such measurements have applications in microelectronics. The same method of operation was extended to other types of insulating film, and in particular, to the metallurgical study of passivation films formed on the surface of stainless steels. (author) [fr

Structural study of anodic films formed on aluminum in nitric acid electrolyte

Energy Technology Data Exchange (ETDEWEB)

Yakovleva, N.M.; Anicai, L.; Yakovlev, A.N.; Dima, L.; Khanina, E.Ya.; Buda, M.; Chupakhina, E.A

2002-09-02

The paper presents the results of investigations of porous Al anodic films formed in HNO{sub 3} electrolytes carried out by means of electrochemical techniques and X-ray diffraction as well as scanning electron microscopy (SEM). It was assumed that both electrochemical formation of a porous oxide and anodic dissolution of metal take place at Al/oxide interface at the same time. The analysis of short-range order (SRO) parameters for relatively high current density, 1x10{sup 3} A/m{sup 2}, and anodizing time, 10 min, leads to the conclusion that films mainly consist of amorphous alumina with {gamma}'-Al{sub 2}O{sub 3}-like SRO and a small amount ({approx}10%) of amorphous aluminum oxyhydroxide. SEM investigation of the films revealed strong dependence of the surface relief on different applied forming conditions. This marked change in the surface relief is discussed taking into account the relatively complex behavior of Al during anodization in HNO{sub 3} electrolytes, that involves both electrochemical growth and dissolution processes of anodic film associated with an electrochemical dissolution of aluminum substrate.

Structural study of anodic films formed on aluminum in nitric acid electrolyte

International Nuclear Information System (INIS)

Yakovleva, N.M.; Anicai, L.; Yakovlev, A.N.; Dima, L.; Khanina, E.Ya.; Buda, M.; Chupakhina, E.A.

2002-01-01

The paper presents the results of investigations of porous Al anodic films formed in HNO 3 electrolytes carried out by means of electrochemical techniques and X-ray diffraction as well as scanning electron microscopy (SEM). It was assumed that both electrochemical formation of a porous oxide and anodic dissolution of metal take place at Al/oxide interface at the same time. The analysis of short-range order (SRO) parameters for relatively high current density, 1x10 3 A/m 2 , and anodizing time, 10 min, leads to the conclusion that films mainly consist of amorphous alumina with γ'-Al 2 O 3 -like SRO and a small amount (∼10%) of amorphous aluminum oxyhydroxide. SEM investigation of the films revealed strong dependence of the surface relief on different applied forming conditions. This marked change in the surface relief is discussed taking into account the relatively complex behavior of Al during anodization in HNO 3 electrolytes, that involves both electrochemical growth and dissolution processes of anodic film associated with an electrochemical dissolution of aluminum substrate

Co thin film with metastable bcc structure formed on GaAs(111 substrate

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Minakawa Shigeyuki

2014-07-01

Full Text Available Co thin films are prepared on GaAs(111 substrates at temperatures ranging from room temperature to 600 ºC by radio-frequency magnetron sputtering. The growth behavior and the detailed resulting film structure are investigated by in-situ reflection high-energy electron diffraction and X-ray diffraction. In early stages of film growth at temperatures lower than 200 ºC, Co crystals with metastable A2 (bcc structure are formed, where the crystal structure is stabilized through hetero-epitaxial growth. With increasing the film thickness beyond 2 nm, the metastable structure starts to transform into more stable A1 (fcc structure through atomic displacements parallel to the A2{110} close-packed planes. The crystallographic orientation relationship between the A2 and the transformed A1 crystals is A1{111} || A2{110}. When the substrate temperature is higher than 400 ºC, Ga atoms of substrate diffuse into the Co films and a Co-Ga alloy with bcc-based ordered structure of B2 is formed.

Structural characterization and properties of lanthanum film as chromate replacement for tinplate

International Nuclear Information System (INIS)

Huang Xingqiao; Li Ning

2007-01-01

Sulfide-stain resistance of La-passivated, unpassivated and Cr-passivated tinplate was measured using a cysteine tarnish test. Corrosion behavior of these tinplates was investigated using electrochemical impedance spectroscopy (EIS) measurement. The morphology, composition and thickness of lanthanum film were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and X-ray fluorescence spectrometry (XRF), respectively. La-passivation treatment remarkably enhances sulfide-stain resistance of tinplate, and sulfide-stain resistance of La-passivated tinplate is slightly higher than that of Cr-passivated tinplate. La-passivation treatment also significantly improves corrosion protection property of tinplate. In contact with 3.5% NaCl solution, corrosion resistance of La-passivated tinplate is close to that of Cr-passivated tinplate, and in contact with 0.1 M citric-citrate buffer solution, corrosion resistance of La-passivated tinplate is higher than that of Cr-passivated tinplate. Lanthanum film is composed of spherical particles about 50-1000 nm in diameter, while most part of tinplate's surface is covered with the small particles about 50-200 nm. The film mainly consists of lanthanum and oxygen, which mainly exist as La 2 O 3 and its hydrates such as La(OH) 3 and LaOOH. The amount of lanthanum in the film is about 0.0409 g/m 2

Thin film-based optically variable security devices: From passive to active

Science.gov (United States)

Baloukas, Bill

Counterfeiting costs the world economy billions of dollars every year. Aside from financial losses, counterfeiting also poses a great threat to the public's safety, for example through the existence of counterfeit passports (terrorism), pharmaceutical products (health hazards) and even airplane parts (safety issues). Optical security devices (OSDs) have therefore played a critical role in the fight against counterfeiting. It is the aim of the present thesis to show that through the use of metamerism and electrochromic materials, new types of active security devices with interesting features can be created; indeed, most present-day devices are passive in nature. I first demonstrate that the addition of metamerism in the design of interference filters can result in innovative features. Different structures which can be used in transmission and/or in reflection are designed, fabricated, and evaluated. The first structures which are presented here are based on a combination of two different metameric interference filters. Possessing widely different transmission spectra, these filters also offer different angular color shifts and, as a result, offer an opportunity of creating hidden image effects. Despite their interesting properties, such metameric devices are shown to be highly illuminant and observer sensitive; that is the color match is lost under most observation conditions. These issues are solved by a simpler structure based on the juxtaposition of an interference filter and a non-iridescent colored material. Throughout this study, I present the design approach, analyze the filters' sensitivity to deposition errors, and evaluate the performance of prototype devices prepared by dual ion beam sputtering. Following my work on passive metameric systems, I then propose to go one step further by implementing an active component using an electrochromic material. This novel concept, which is based on the joint use of a metameric filter and electrochromic device, offers

Antimicrobial and Antioxidant Activity of Chitosan/Hydroxypropyl Methylcellulose Film-Forming Hydrosols Hydrolyzed by Cellulase

Directory of Open Access Journals (Sweden)

Anna Zimoch-Korzycka

2016-09-01

Full Text Available The aim of this study was to evaluate the impact of cellulase (C on the biological activity of chitosan/hydroxypropyl methylcellulose (CH/HPMC film-forming hydrosols. The hydrolytic activity of cellulase in two concentrations (0.05% and 0.1% was verified by determination of the progress of polysaccharide hydrolysis, based on viscosity measurement and reducing sugar-ends assay. The 2,2-diphenyl-1-picrylhydrazyl (DPPH free radical scavenging effect, the ferric reducing antioxidant power (FRAP, and microbial reduction of Pseudomonas fluorescens, Yersinia enterocolitica, Bacillus cereus, and Staphylococcus aureus were studied. During the first 3 h of reaction, relative reducing sugar concentration increased progressively, and viscosity decreased rapidly. With increasing amount of enzyme from 0.05% to 0.1%, the reducing sugar concentration increased, and the viscosity decreased significantly. The scavenging effect of film-forming solutions was improved from 7.6% at time 0 and without enzyme to 52.1% for 0.1% cellulase after 20 h of reaction. A significant effect of cellulase addition and reaction time on antioxidant power of the tested film-forming solutions was also reported. Film-forming hydrosols with cellulase exhibited a bacteriostatic effect on all tested bacteria, causing a total reduction.

Structural properties of films and rheology of film-forming solutions of chitosan gallate for food packaging.

Science.gov (United States)

Wu, Chunhua; Tian, Jinhu; Li, Shan; Wu, Tiantian; Hu, Yaqin; Chen, Shiguo; Sugawara, Tatsuya; Ye, Xingqian

2016-08-01

The chitosan gallates (CG) were obtained by free-radical-initiated grafting of gallic acid (GA) onto chitosan (CS) in this work. The chemical structures of the CG were corroborated by UV-vis, GPC and (1)H NMR analysis. The grafting reaction was accompanied with a degradation of the CS molecule. The shear-thinning flow behavior of CG film-forming solutions (CG FFS) decreased with the grafting amount of GA into CS chain, while the CG FFS grafted at a lower GA value behaved like a networks containing entangled or cross-linked polymer chains with a more elastic behavior. The increasing of GA grafting onto the CS chain led to a reduction of tensile strength, elongation at break and water resistance in the corresponding films, but increases in the antioxidant and antimicrobial activities were observed. The microstructure of the film was investigated using scanning electron and atomic force microscope, and the results were closely related to the observed film properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

Evaluation of stress stabilities in amorphous In-Ga-Zn-O thin-film transistors: Effect of passivation with Si-based resin

Science.gov (United States)

Ochi, Mototaka; Hino, Aya; Goto, Hiroshi; Hayashi, Kazushi; Fujii, Mami N.; Uraoka, Yukiharu; Kugimiya, Toshihiro

2018-02-01

Fabrication process conditions of a passivation (PV) layer correlated with stress stabilities of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In etch-stop layer (ESL)-TFTs, by inserting a Si-based resin between SiN x and SiO x PV layers, the peak intensity in the photoinduced transient spectroscopy (PITS) spectrum was notably reduced. This suggested the suppression of hydrogen incorporation into a-IGZO, which led to the improvement of stability under negative bias thermal illumination stress (NBTIS). In contrast, the hydrogen-related defects in the a-IGZO were easily formed by the back-channel etch (BCE) process. Furthermore, it was found that, under NBTIS, the transfer curves of the BCE-TFTs shifted in parallel owing to the positive fixed charge located in the back channel of the a-IGZO TFTs. The hump-shaped shift increased with stress time. This is because hydrogen atoms located at the back-channel surfaces of the a-IGZO and/or PV layers were incorporated into the channel region of the BCE-TFTs and induced the hydrogen-related defects.

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

International Nuclear Information System (INIS)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-01-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

Passivation process and the mechanism of packing particles in the Fe0/GAC system during the treatment of ABS resin wastewater.

Science.gov (United States)

Lai, Bo; Zhou, Yuexi; Wang, Juling; Zhang, Yunhong; Chen, Zhiqiang

2014-01-01

This study provides mechanistic insights into the passivation of the packing particles during the treatment of acrylonitrile-butadiene-styrene (ABS) resin wastewater by the Fe0/GAC system. The granular-activated carbon (GAC) and iron chippings (Fe0) were mixed together with a volumetric ratio of 1:1. GAC has a mean particle size of approximately 3-5 mm, a specific surface of 748 m2 g(-1), a total pore volume of 0.48 mL g(-1) and a bulk density of 0.49 g cm(-3). The iron chippings have a compact and non-porous surface morphology. The results show that the packing particles in the Fe0/GAC system would lose their activity because the removal of TOC and PO4(3-) for ABS resin wastewater could not carried out by the Fe0/GAC system after 40 days continuous running. Meanwhile, the availability of O2 and intrinsic reactivity of Fe0 play a key role on the form of passive film with different iron oxidation states. The passive film on the surface of iron chippings was formed by two phases: (a) local corrosion phase (0-20 d) and (b) co-precipitation phase (20-40 d), while that of GAC was mainly formed by the co-precipitation of corrosion products with SO4(2-) and PO4(3-) because SO4(2-) and PO4(3-) would not easily reach the Fe0 surface. Therefore, in order to avoid the occurrence of filler passivation, high concentrations of SO4(2-) and PO4(3-) in wastewater should be removed before the treatment process of the Fe/GAC system.

Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation.

Science.gov (United States)

Choi, Seungbeom; Jo, Jeong-Wan; Kim, Jaeyoung; Song, Seungho; Kim, Jaekyun; Park, Sung Kyu; Kim, Yong-Hoon

2017-08-09

Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (ε ∼ 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (∼44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.

Cycle water chemistry based on film forming amines at power plants: evaluation of technical guidance documents

Science.gov (United States)

Dyachenko, F. V.; Petrova, T. I.

2017-11-01

Efficiency and reliability of the equipment in fossil power plants as well as in combined cycle power plants depend on the corrosion processes and deposit formation in steam/water circuit. In order to decrease these processes different water chemistries are used. Today the great attention is being attracted to the application of film forming amines and film forming amine products. The International Association for the Properties of Water and Steam (IAPWS) consolidated the information from all over the World, and based on the research studies and operating experience of researchers and engineers from 21 countries, developed and authorized the Technical Guidance Document: “Application of Film Forming Amines in Fossil, Combined Cycle, and Biomass Power Plants” in 2016. This article describe Russian and International technical guidance documents for the cycle water chemistries based on film forming amines at fossil and combined cycle power plants.

Laser ablation and photostimulated passivation of the surface of Cd1–хZnхTe crystals

Directory of Open Access Journals (Sweden)

Zagoruiko Yu. A.

2011-06-01

Full Text Available A new physical method of Cd1–хZnхTe-detectors passivation is proposed — the treatment of crystal surface by a laser ablation (LA with subsequent photostimulated passivation (PhSP, during wich a high-resistance oxide layer is formed on it’s surface after the surface cleaning under intensive light irradiation effect. It is shown that the method of LA+PhSP is manufacturable and in comparison with PhSP and PhESP methods developed earlier provides a thick, homogeneous and high-oxide films, which significantly increases the surface resistivity of Cd1–хZnхTe samples and reduces leakage currents in them.

Role of electrolyte composition on structural, morphological and in-vitro biological properties of plasma electrolytic oxidation films formed on zirconium

International Nuclear Information System (INIS)

M, Sandhyarani; T, Prasadrao; N, Rameshbabu

2014-01-01

Highlights: • Uniform oxide films were formed on zirconium by plasma electrolytic oxidation. • Silicate in electrolyte alter the growth of m-ZrO 2 from (1 ¯ 11) to (2 0 0) orientation. • Addition of KOH to electrolyte improved the corrosion resistance of oxide films. • Silicon incorporated oxide films showed higher surface roughness and wettability. • Human osteosarcoma cells were strongly adhered and spreaded on all the oxide films. - Abstract: Development of oxide films on metallic implants with a good combination of corrosion resistance, bioactivity and cell adhesion can greatly improve its biocompatibility and functionality. Thus, the present work is aimed to fabricate oxide films on metallic Zr by plasma electrolytic oxidation (PEO) in methodically varied concentrations of phosphate, silicate and KOH based electrolyte systems using a pulsed DC power source. The oxide films fabricated on Zr are characterized for its phase composition, surface morphology, chemical composition, roughness, wettability, surface energy, corrosion resistance, apatite forming ability and osteoblast cell adhesion. Uniform films with thickness varying from 6 to 11 μm are formed. XRD patterns of all the PEO films showed the predominance of monoclinic zirconia phase. The film formed in phosphate + KOH electrolyte showed superior corrosion resistance, which can be ascribed to its pore free morphology. The films formed in silicate electrolyte showed higher apatite forming ability with good cell adhesion and spreading over its surface which is attributed to its superior surface roughness and wettability characteristics. Among the five different electrolyte systems employed in the present study, the PEO film formed in an electrolyte system with phosphate + silicate + KOH showed optimum corrosion resistance, apatite forming ability and biocompatibility

Controllable self-induced passivation of hybrid lead iodide perovskites toward high performance solar cells.

Science.gov (United States)

Chen, Qi; Zhou, Huanping; Song, Tze-Bin; Luo, Song; Hong, Ziruo; Duan, Hsin-Sheng; Dou, Letian; Liu, Yongsheng; Yang, Yang

2014-07-09

To improve the performance of the polycrystalline thin film devices, it requires a delicate control of its grain structures. As one of the most promising candidates among current thin film photovoltaic techniques, the organic/inorganic hybrid perovskites generally inherit polycrystalline nature and exhibit compositional/structural dependence in regard to their optoelectronic properties. Here, we demonstrate a controllable passivation technique for perovskite films, which enables their compositional change, and allows substantial enhancement in corresponding device performance. By releasing the organic species during annealing, PbI2 phase is presented in perovskite grain boundaries and at the relevant interfaces. The consequent passivation effects and underlying mechanisms are investigated with complementary characterizations, including scanning electron microscopy (SEM), X-ray diffraction (XRD), time-resolved photoluminescence decay (TRPL), scanning Kelvin probe microscopy (SKPM), and ultraviolet photoemission spectroscopy (UPS). This controllable self-induced passivation technique represents an important step to understand the polycrystalline nature of hybrid perovskite thin films and contributes to the development of perovskite solar cells judiciously.

Electropotential measurements of passivation and corrosion of steel coupons

International Nuclear Information System (INIS)

Petit, G.S.; Wright, R.R.

1977-02-01

There is considerable interest at the Oak Ridge Gaseous Diffusion Plant (ORGDP) in the preparation of mild steel to resist corrosion (passivation) both in moist air and uranium hexafluoride (UF 6 ) environments. Steel prepared by the usual procedures to prevent rusting, such as oiling, plastic coating, painting, or phosphating, cannot be used in the presence of UF 6 . Tests have shown that a chromate treatment or an ammoniacal citrate treatment for passivation are effective. The electropotential behavior of these two passivation treatments is described. The initial electropotential measurement, when compared to that of an unpassivated coupon, gives the electropotential degree in volts of passivation. Continual exposure in the test, when compared to the unpassivated coupon, gives a profile of the durability of the passivation film. The chromate passivation treatment was slightly superior to the citrate passivation

Cell spreading on titanium dioxide film formed and modified with aerosol beam and femtosecond laser

International Nuclear Information System (INIS)

Shinonaga, Togo; Tsukamoto, Masahiro; Nagai, Akiko; Yamashita, Kimihiro; Hanawa, Takao; Matsushita, Nobuhiro; Xie, Guoqiang; Abe, Nobuyuki

2014-01-01

Titanium (Ti) is widely used in biomaterials because of its excellent anti-corrosion properties and high strength. However, Ti has no biological function, so its bioactivity must be improved. Coating a titanium dioxide (TiO 2 ) film on a Ti plate surface has been shown to improve the biocompatibility of Ti plates. If periodic nanostructures were formed on the film surface, the direction of cell spreading might be controlled by the direction of the grooves. Controlling cell spreading on biomaterials would contribute to the creation of advanced biomaterials. In this paper, a TiO 2 film was formed on a Ti plate with an aerosol beam composed of sub micron-sized TiO 2 particles and helium gas. Periodic nanostructures, lying perpendicular to the laser electric field polarization vector, were formed on the film by scanning the femtosecond laser focusing spot. The period and height of the periodic nanostructures were about 230 nm and 150 nm, respectively. In a cell test, cell spreading was observed along the grooves of the periodic nanostructures; in contrast, cell spreading did not show a definite direction on TiO 2 a film without periodic nanostructures. These results suggest that the direction of cell spreading on the film can be controlled by periodic nanostructure formation generated using a femtosecond laser.

Role of bond adaptability in the passivation of colloidal quantum dot solids

KAUST Repository

Thon, Susanna; Ip, Alex; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W.; Carey, Graham H.; Masala, Silvia; Sargent, E. H.

2013-01-01

. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority

Colloidal-quantum-dot photovoltaics using atomic-ligand passivation

KAUST Repository

Tang, Jiang

2011-09-18

Colloidal-quantum-dot (CQD) optoelectronics offer a compelling combination of solution processing and spectral tunability through quantum size effects. So far, CQD solar cells have relied on the use of organic ligands to passivate the surface of the semiconductor nanoparticles. Although inorganic metal chalcogenide ligands have led to record electronic transport parameters in CQD films, no photovoltaic device has been reported based on such compounds. Here we establish an atomic ligand strategy that makes use of monovalent halide anions to enhance electronic transport and successfully passivate surface defects in PbS CQD films. Both time-resolved infrared spectroscopy and transient device characterization indicate that the scheme leads to a shallower trap state distribution than the best organic ligands. Solar cells fabricated following this strategy show up to 6% solar AM1.5G power-conversion efficiency. The CQD films are deposited at room temperature and under ambient atmosphere, rendering the process amenable to low-cost, roll-by-roll fabrication. © 2011 Macmillan Publishers Limited. All rights reserved.

Direct Observation of the BCC (100) Plane in Thin Films of Sphere-forming Diblock Copolymers

Science.gov (United States)

Ji, Shengxiang; Nagpal, Umang; Liao, Wen; de Pablo, Juan; Nealey, Paul

2010-03-01

In sphere-forming diblock copolymers, periodic arrays of spheres are arranged in a body-centred cubic (BCC) lattice structure in bulk. However, in thin films different surface morphologies were observed as a function of the film thickness, and the transition from the hexagonal array to the BCC (110) arrangement of spheres on film surfaces was located with respect to the increase of the film thickness. Here we report the first direct observation of the BCC (100) plane in thin films of poly (styrene-b-methyl methacrylate) diblock copolymers on homogeneous substrates. By balancing the surface energies of both blocks, the lower energy BCC (100) plane corresponding to a square arrangement of half spheres, formed on film surfaces when the film thickness was commensurate with the spacing, L100, between (100) planes or greater than 2 L100. A hexagonal arrangement of spheres was only observed when the thickness was less than 2 L100 and incommensurate with 1 L100. Monte Carlo (MC) simulation confirmed our experimental observation and was used to investigate the transition of the arrangement of spheres as a function of the film thickness.

Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

International Nuclear Information System (INIS)

Lin, Meng-Yu; Lee, Si-Chen; Lin, Shih-Yen; Wang, Cheng-Hung; Chang, Shu-Wei

2015-01-01

In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors. (paper)

Improved interface properties of atomic-layer-deposited HfO{sub 2} film on InP using interface sulfur passivation with H{sub 2}S pre-deposition annealing

Energy Technology Data Exchange (ETDEWEB)

Jin, Hyun Soo [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin [Inorganic Material Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Sang-Moon [Process Development Team, Semiconductor R& D Center, Samsung Electronics Co. Ltd, Hwasung 445-701 (Korea, Republic of); Park, Jong-Bong; Yun, Dong-Jin [Analytical Engineering Group, Platform Technology Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

2015-12-01

Highlights: • ALD HfO{sub 2} films were grown on InP for III–V compound-semiconductor-based devices. • S passivation was performed with (NH{sub 4}){sub 2}S solution and annealing under a H{sub 2}S atmosphere. • The H{sub 2}S annealing provided similar S profiles at the interface without surface damage. • The H{sub 2}S annealing was more effective to suppress interface state density due to thermal energy. - Abstract: Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H{sub 2}S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO{sub 2} film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH{sub 4}){sub 2}S solution treatment. The H{sub 2}S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH{sub 4}){sub 2}S solution treatment, although S profiles at the interface of HfO{sub 2}/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H{sub 2}S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H{sub 2}S annealing.

Antibacterial Properties of Titanate Nano fiber Thin Films Formed on a Titanium Plate

International Nuclear Information System (INIS)

Yada, M.; Inoue, Y.; Morita, T.; Torikai, T.; Watari, T.; Noda, I.; Hotokebuchi, T.

2013-01-01

A sodium titanate nano fiber thin film and a silver nanoparticle/silver titanate nano fiber thin film formed on the surface of a titanium plate exhibited strong antibacterial activities against methicillin-resistant Staphylococcus aureus, which is one of the major bacteria causing in-hospital infections. Exposure of the sodium titanate nano fiber thin film to ultraviolet rays generated a high antibacterial activity due to photo catalysis and the sodium titanate nano fiber thin film immediately after its synthesis possessed a high antibacterial activity even without exposure to ultraviolet rays. Elution of silver from the silver nanoparticle/silver titanate nano fiber thin film caused by the silver ion exchange reaction was considered to contribute substantially to the strong antibacterial activity. The titanate nano fiber thin films adhered firmly to titanium. Therefore, these titanate nano fiber thin film/titanium composites will be extremely useful as implant materials that have excellent antibacterial activities.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

International Nuclear Information System (INIS)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-01-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

Energy Technology Data Exchange (ETDEWEB)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-04-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Removal of FePO4 and Fe3(PO4)2 crystals on the surface of passive fillers in Fe0/GAC reactor using the acclimated bacteria

International Nuclear Information System (INIS)

Lai, Bo; Zhou, Yuexi; Yang, Ping; Wang, Juling; Yang, Jinghui; Li, Huiqiang

2012-01-01

Highlights: ► Fe 3 (PO 4 ) 2 and FePO 4 crystals would weaken treatment efficiency of Fe 0 /GAC reactor. ► Fe 3 (PO 4 ) 2 and FePO 4 crystals could be removed by the acclimated bacteria. ► FeS and sulfur in the passive film would be removed by the sulfur-oxidizing bacteria. ► Develop a cost-effective bio-regeneration technology for the passive fillers. - Abstract: As past studies presented, there is obvious defect that the fillers in the Fe 0 /GAC reactor begin to be passive after about 60 d continuous running, although the complicated, toxic and refractory ABS resin wastewater can be pretreated efficiently by the Fe 0 /GAC reactor. During the process, the Fe 3 (PO 4 ) 2 and FePO 4 crystals with high density in the passive film are formed by the reaction between PO 4 3− and Fe 2+ /Fe 3+ . Meanwhile, they obstruct the formation of macroscopic galvanic cells between Fe 0 and GAC, which will lower the wastewater treatment efficiency of Fe 0 /GAC reactor. In this study, in order to remove the Fe 3 (PO 4 ) 2 and FePO 4 crystals on the surface of the passive fillers, the bacteria were acclimated in the passive Fe 0 /GAC reactor. According to the results, it can be concluded that the Fe 3 (PO 4 ) 2 and FePO 4 crystals with high density in the passive film could be decomposed or removed by the joint action between the typical propionic acid type fermentation bacteria and sulfate reducing bacteria (SRB), whereas the PO 4 3− ions from the decomposition of the Fe 3 (PO 4 ) 2 and FePO 4 crystals were released into aqueous solution which would be discharged from the passive Fe 0 /GAC reactor. Furthermore, the remained FeS and sulfur (S) in the passive film also can be decomposed or removed easily by the oxidation of the sulfur-oxidizing bacteria. This study provides some theoretical references for the further study of a cost-effective bio-regeneration technology to solve the passive problems of the fillers in the zero-valent iron (ZVI) or Fe 0 /GAC reactor.

Insight into the product film formed on Ni-advanced weathering steel in a tropical marine atmosphere

Science.gov (United States)

Wu, Wei; Cheng, Xuequn; Hou, Huaxing; Liu, Bo; Li, Xiaogang

2018-04-01

The product film formed on Ni-advanced weathering steel in a tropical marine environment was investigated in detail through outdoor exposure by using diverse surface analysis techniques combined with electrochemical impedance spectroscopy and scanning kelvin probe measurements. The results showed that the product film was mainly composed of nanophasic goethite in the inner layer and maghemite, akaganeite, and hematite in the outer layer. Moreover, the resistance to atmospheric corrosion gradually increased from the outermost product film to the innermost film. Ni was significantly enriched in the inner layer in the form of the spinel phase NiFe2O4, which transformed lepidocrocite to fine-grained goethite, withstood the invasion of chloridion, and improved the corrosion potential of the product film in a tropical marine atmosphere.

Influence of the oxyanion nature of the electrolyte on the corrosion/passivation behaviour of nickel

International Nuclear Information System (INIS)

Trompette, J.L.; Massot, L.; Vergnes, H.

2013-01-01

Highlights: •Influence of oxyanion nature on the passivation of nickel. •Constitutive atoms of oxyanion incorporated into the passive film. •Evidence of direct bonding between N and Ni surface. -- Abstract: The electrochemical behaviour of nickel in the presence of various electrolyte solutions at 0.1 mol/L concentration exhibits a distinction according to the oxyanion nature of the investigated anions. Passivity is achieved with oxyanions whereas it fails with anions not containing oxygen. SIMS and XPS measurements performed from isotopic and non isotopic KNO 3 electrolytes indicate that the oxygen and nitrogen atoms from nitrate oxyanions are incorporated into the passive film during anodic polarization and with evidence of a direct bonding between nitrogen and nickel surface

Phage type and sensitivity to antibiotics of Staphylococcus aureus film-forming strains isolated from airway mucosa

Directory of Open Access Journals (Sweden)

O. S. Voronkova

2014-10-01

Full Text Available Today film-forming strains of bacteria play very important role in clinical pathology. Staphylococci are ones of most dangerous of them. This bacteria can determine different pathological processes, for example, complication of airway mucosa. The ability to form a biofilm is one of the main properties of nosocomial strains. These strains should be monitored and their carriers are to be properly treated. To determine the origin of staphylococci strains we used bacteriophages from the International kit. The aim of research was to determine the phage type of staphylococci film-forming strains, that were isolated from naso-pharingial mucosa. Phage typing has been carried out for 16 film-forming strains of S. aureus. To solve this problem, we used the International phage kit by Fisher’s method. As a result, sensitivity to phages from the International kit showed 53.8% of studied strains of S. aureus. 64.3% of sensitivity strains were lysed by one of the phage, 21.4% – were by two of the phages, 14.3% – by three of the phages. Isolates were sensitive to phages: 81 – 42.9%, 75 – 35.7%, 28.6% were sensitive to phages 47 and 53. All cases of detection of sensitivity to phage 47 coincided with the ability to form biofilm. Among non-film-forming strains there was no sensitive strains for this phage. Film-forming strains resist to erythromycin (62.5%, ciprofloxacin (43.8%, gentamicin (56.3%, tetracycline (87.5%, amoxicillin (93.8%, and cefuroxime (37.5%. All cases of sensitivity to phage 47 coincided with resistance to erythromycin, amoxicillin and tetracycline. For two of these strains, we also defined resistance to gentamicin and for one of them – to ciprofloxacin. Results of research allowed to relate the bacterial cultures for determining the type. This may have implications for studying of film-forming ability, because surface structures of bacterial cell take place in this process. Belonging of an isolate to specific phage type may

Passivation properties of alumina for multicrystalline silicon nanostructure prepared by spin-coating method

Science.gov (United States)

Jiang, Ye; Shen, Honglie; Yang, Wangyang; Zheng, Chaofan; Tang, Quntao; Yao, Hanyu; Raza, Adil; Li, Yufang; Huang, Chunlai

2018-02-01

In this paper, we report passivation properties of inverted pyramidal nanostructure based multi-crystalline silicon (mc-Si) by Al2O3 films with spin-coating method. Precursors AlCl3 and Al(acac)3 for Al2O3 films were chosen for comparison. Al2O3/SiO x stacks were found to be able to passivate the nanostructured surface well. With the number of spin-coating up to five, the Al2O3 films could conformally attach the nanostructure. The weighted average reflectance values (ranging from 400-900 nm) of the passivated silicon surface could be reduced to 10.74% (AlCl3) and 11.12% (Al(acac)3), and the effective carrier lifetime could reach 7.84 and 16.98 μs, respectively. This work presented a potential process to fabricate low cost high efficiency mc-Si solar cells.

Investigations of corrosion films formed on API-X52 pipeline steel in acid sour media

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Espejel, A. [Instituto Politecnico Nacional, Departamento de Ingenieria Metalurgica, IPN-ESIQIE, UPALM Ed. 7, Zacatenco 07738, Mexico, D.F. (Mexico); Dominguez-Crespo, M.A. [Instituto Politecnico Nacional, CICATA-Unidad Altamira-Tamaulipas, km 14.5, Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamps (Mexico); Cabrera-Sierra, R. [Instituto Politecnico Nacional, Departamento de Ingenieria Quimica Industrial, IPN-ESIQIE, UPALM Ed. 7, Zacatenco 07738, Mexico, D.F. (Mexico); Rodriguez-Meneses, C. [Instituto Politecnico Nacional, Departamento de Ingenieria Metalurgica, IPN-ESIQIE, UPALM Ed. 7, Zacatenco 07738, Mexico, D.F. (Mexico); Arce-Estrada, E.M., E-mail: earce@ipn.m [Instituto Politecnico Nacional, Departamento de Ingenieria Metalurgica, IPN-ESIQIE, UPALM Ed. 7, Zacatenco 07738, Mexico, D.F. (Mexico)

2010-07-15

Corrosion films formed by voltammetry using different switching potentials and by immersion on API-X52 pipeline steel in simulated acid sour media (NACE ID182) have been characterized using Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), Linear Polarization and Electrochemical Impedance Spectroscopy (EIS) techniques. XRD and EDS analysis showed that the films are mainly composed of sulphide compounds (mackinawite, troilite, marcasite and pyrite) as well as iron oxides, as steel damage increases. Across SEM micrographs the corrosion films formed by potentiodynamic and immersion tests are very similar, covering most of the steel. Polarization and EIS results corroborate poor behavior against corrosion.

Investigations of corrosion films formed on API-X52 pipeline steel in acid sour media

International Nuclear Information System (INIS)

Hernandez-Espejel, A.; Dominguez-Crespo, M.A.; Cabrera-Sierra, R.; Rodriguez-Meneses, C.; Arce-Estrada, E.M.

2010-01-01

Corrosion films formed by voltammetry using different switching potentials and by immersion on API-X52 pipeline steel in simulated acid sour media (NACE ID182) have been characterized using Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), Linear Polarization and Electrochemical Impedance Spectroscopy (EIS) techniques. XRD and EDS analysis showed that the films are mainly composed of sulphide compounds (mackinawite, troilite, marcasite and pyrite) as well as iron oxides, as steel damage increases. Across SEM micrographs the corrosion films formed by potentiodynamic and immersion tests are very similar, covering most of the steel. Polarization and EIS results corroborate poor behavior against corrosion.

Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

International Nuclear Information System (INIS)

Antonova, I. V.; Soots, R. A.; Seleznev, V. A.; Prints, V. Ya.

2007-01-01

The electrical properties of structures consisting of a monolayer of 1-octadecene deposited on the Si surface are investigated depending on the method of passivation of the surface prior to the deposition of the film (hydrogen and ion passivation) and the intensity of illumination which activates the addition reaction of molecules of 1-octadecene to the Si atoms. The monolayer of 1-octadecene on the Si surface is stable and provides the chemical passivation of the surface. Two types of traps are found, namely, traps for holes and electrons, whose density can be varied during deposition of the monolayer by the choice of intensity of illumination and by the method of passivation of the surface. In the case of a low level of illumination and/or the use of the iodine passivation of the surface, the electron traps prevail, and, in the case of high intensity of illumination and/or hydrogen passivation of the surface, the hole traps prevail. It is shown that the use of these films provides conductivity in thin near-surface layers of Si due to providing the mode of flat bands or accumulation of carriers near the surface

Cell spreading on titanium dioxide film formed and modified with aerosol beam and femtosecond laser

Energy Technology Data Exchange (ETDEWEB)

Shinonaga, Togo, E-mail: togo@jwri.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 1-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Tsukamoto, Masahiro [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Nagai, Akiko; Yamashita, Kimihiro; Hanawa, Takao [Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan); Matsushita, Nobuhiro [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503 (Japan); Xie, Guoqiang [Institute for Materials Research, Tohoku University, 2-1-1 Karahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Abe, Nobuyuki [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2014-01-01

Titanium (Ti) is widely used in biomaterials because of its excellent anti-corrosion properties and high strength. However, Ti has no biological function, so its bioactivity must be improved. Coating a titanium dioxide (TiO{sub 2}) film on a Ti plate surface has been shown to improve the biocompatibility of Ti plates. If periodic nanostructures were formed on the film surface, the direction of cell spreading might be controlled by the direction of the grooves. Controlling cell spreading on biomaterials would contribute to the creation of advanced biomaterials. In this paper, a TiO{sub 2} film was formed on a Ti plate with an aerosol beam composed of sub micron-sized TiO{sub 2} particles and helium gas. Periodic nanostructures, lying perpendicular to the laser electric field polarization vector, were formed on the film by scanning the femtosecond laser focusing spot. The period and height of the periodic nanostructures were about 230 nm and 150 nm, respectively. In a cell test, cell spreading was observed along the grooves of the periodic nanostructures; in contrast, cell spreading did not show a definite direction on TiO{sub 2} a film without periodic nanostructures. These results suggest that the direction of cell spreading on the film can be controlled by periodic nanostructure formation generated using a femtosecond laser.

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

Science.gov (United States)

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

The application of film-forming amines in secondary side chemistry treatment of NPPs

International Nuclear Information System (INIS)

Ramminger, Ute; Hoffmann-Wankerl, Stephan; Fandrich, Joerg

2012-09-01

World wide a number of nuclear power plants are in operation with steam-water cycles based on a mixed metallurgy concept and / or a non-optimal Balance-of-Plant (BoP) design. Together with limitations of the applied water chemistry treatment, these conditions could enforce the enrichment of impurities, which will be accumulated in the tube sheet region of the steam generators and thus form an aggressive environment with respect to corrosion of steam generator construction materials. The use of surface active agents like film forming amines (FFA) has become widely recognized in the fossil power plant sector, showing a decrease of corrosion product generation by improving the surface conditions. The adherent non wettable film acts as a shield that limits the access of water and hydrated species to the metal or metal oxide surface. This barrier lowers the corrosion rate by inhibiting the mass transfer between surface and solution. This paper deals with the application of film forming amines as complementary conditioning agents in the steam-water cycle of a PWR. The decision for complementing the existing secondary side water chemistry treatment with a controlled and time limited application of film forming amines was part of a project, which has been developed by a pilot plant with PWRs of western design and AREVA NP GmbH. The performance and conditions of the steam generators in those units should be improved. It covers the results of the application with respect to corrosion product transport control, minimization of impurity accumulation in the SGs and improved plant performance. (authors)

Spontaneous passivation observations during scale formation on mild steel in CO{sub 2} brines

Energy Technology Data Exchange (ETDEWEB)

Han Jiabin, E-mail: jhan@lanl.gov [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Nesic, Srdjan, E-mail: nesic@ohio.edu [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Yang Yang; Brown, Bruce N. [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States)

2011-06-01

Highlights: > We observed spontaneous passivation was at pH > 7. A higher open circuit potential was achieved comparing to bare surface or FeCO{sub 3} scaled surface. > Effects of pH, temperature, CO{sub 2}/FeCO{sub 3} on spontaneous passivation were systematically investigated. > TEM analysis determined the structure and chemistry of the passive film is Fe{sub 3}O{sub 4} instead of FeCO{sub 3}. > Root cause of the galvanic mechanism of localized CO{sub 2} corrosion is clarified. - Abstract: Previous study revealed localized corrosion in CO{sub 2} environments was driven by a galvanic cell established between pit surfaces and scaled surrounding area. In order to underpin the understanding of the galvanic mechanism of localized corrosion, the root cause of potential differences between these two surfaces, passivation of mild steel, in CO{sub 2} environments was investigated using transmission electron microscopy technique and electrochemical techniques including potentiodynamic polarization, cyclic polarization and open circuit potential techniques. Potentiodynamic polarization experiments showed that the passivation of the carbon steel surface favorably occurred at pH > 7 and facilitated with the presence of FeCO{sub 3} scale. Cyclic polarization tests showed that polarization rate had an important influence on passivation behavior. At a slower polarization rate, lower passivation potential and current density were observed. Spontaneous passivation was evidenced by a significant increase of corrosion resistance and an open circuit potential without any externally applied current or potential during electrode immersion. This process is affected by pH, temperature, presence of CO{sub 2} and iron carbonate. Nevertheless, iron carbonate film is not the only one responsible for passivation, as demonstrated from depassivation tests where passivity was lost without losing the existing iron carbonate film. Transmission electron microscopy technique was used to determine

Analysis Of Corrosion Resistant Film On AI-Mg-Si Coated By Rare Earth Metal

International Nuclear Information System (INIS)

Darajati, Rusdiana; Ihsan, Mohammad; Wuryanto

2001-01-01

Corrosion analysis of AI-Mg-Si alloy which given corrosion-resistant film of a rare earth oxide coating incorporated with a uniform aluminum oxide film which has been formed on the aluminum alloy surface has been done. The measurement techniques were E corr versus time, polarization resistance, potentiodynamic and SEM (Scanning Electron Microscope for surface analysis. Potential corrosion in water environment tend to bigger with more time for four samples except sample AIMgSi that dipped into triethanolamine. ln HCl pH=1 potential corrosion sample AIMgSi, AIMgSi that dipped into triethanolamine, AIMgSi that dipped into triethanolamine and Ce Cl) tend to bigger with more time while sample AIMgSi that dipped into triethanolamine and YCI 3 or RECI 3 tend to smaller with more time. Potential corrosion in NaOH pH= 13 tend to bigger with more time for all samples. Corrosion rate for sample AIMgSi that dipped into triethanolamine in water environment relatively slower (0,0205 mpy), while in HCl pH=1 and NaOH pH=13 corrosion rate sample AIMgSi that dipped into triethanolamine and YCI 3 relatively slower, respectively are 0,1157 mpy and 2468,26 mpy. Sample AIMgSi that dipped into triethanolamine and RECI 3 in water environment has passivation and trans passivation area while four simple don't have passivation area, in H CI pH=1 all samples generally have passivation area at the same current density range while in NaOH pH= 13 sample AIMgSi has trans passivation area at a potential of about 800 mV while four other sample have passivation area at a potential of about-850-1500 mV. SEM analysis show that the coating layer which formed on the sample surface less protective especially in HCl pH= land NaOH pH=13

EVOLUTION OF THE MASS-METALLICITY RELATIONS IN PASSIVE AND STAR-FORMING GALAXIES FROM SPH-COSMOLOGICAL SIMULATIONS

International Nuclear Information System (INIS)

Romeo Velonà, A. D.; Gavignaud, I.; Meza, A.; Sommer-Larsen, J.; Napolitano, N. R.; Antonuccio-Delogu, V.; Cielo, S.

2013-01-01

We present results from SPH-cosmological simulations, including self-consistent modeling of supernova feedback and chemical evolution, of galaxies belonging to two clusters and 12 groups. We reproduce the mass-metallicity (ZM) relation of galaxies classified in two samples according to their star-forming (SF) activity, as parameterized by their specific star formation rate (sSFR), across a redshift range up to z = 2. The overall ZM relation for the composite population evolves according to a redshift-dependent quadratic functional form that is consistent with other empirical estimates, provided that the highest mass bin of the brightest central galaxies is excluded. Its slope shows irrelevant evolution in the passive sample, being steeper in groups than in clusters. However, the subsample of high-mass passive galaxies only is characterized by a steep increase of the slope with redshift, from which it can be inferred that the bulk of the slope evolution of the ZM relation is driven by the more massive passive objects. The scatter of the passive sample is dominated by low-mass galaxies at all redshifts and keeps constant over cosmic times. The mean metallicity is highest in cluster cores and lowest in normal groups, following the same environmental sequence as that previously found in the red sequence building. The ZM relation for the SF sample reveals an increasing scatter with redshift, indicating that it is still being built at early epochs. The SF galaxies make up a tight sequence in the SFR-M * plane at high redshift, whose scatter increases with time alongside the consolidation of the passive sequence. We also confirm the anti-correlation between sSFR and stellar mass, pointing at a key role of the former in determining the galaxy downsizing, as the most significant means of diagnostics of the star formation efficiency. Likewise, an anti-correlation between sSFR and metallicity can be established for the SF galaxies, while on the contrary more active galaxies

Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution.

Science.gov (United States)

Zhang, Jing; Yang, Yingchao; Lou, Jun

2016-09-09

Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

Passive behaviour of alloy corrosion-resistant steel Cr10Mo1 in simulating concrete pore solutions with different pH

International Nuclear Information System (INIS)

Ai, Zhiyong; Jiang, Jinyang; Sun, Wei; Song, Dan; Ma, Han; Zhang, Jianchun; Wang, Danqian

2016-01-01

Highlights: • A new alloy corrosion-resistant steel Cr10Mo1 is developed for reinforcing rebar of concrete in severe environments. • The effects of pH on the passive behaviour of Cr10Mo1 steel compared with plain carbon steel were studied systematically by electrochemical techniques and surface analysis. • The mechanism for self-reinforcing passivity against carbonation of the corrosion-resistant steel is revealed. - Abstract: The passive behaviour of new alloy corrosion-resistant steel Cr10Mo1 and plain carbon steel (as a comparison) in simulating concrete pore solutions of different pH (ranging from 13.5 to 9.0) under open circuit potential conditions, was evaluated by various electrochemical techniques: potentiodynamic polarization, capacitance measurements and electrochemical impedance spectroscopy. The chemical composition and structure of passive films were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The electrochemical responses of passive films show that Cr10Mo1 steel has an increasing passivity with pH decreasing while carbon steel dose conversely, revealing carbonation does no negative effect on passivation of the corrosion-resistant steel. SIMS reveals that the passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer mainly consisting of Fe oxides and hydroxides, and an inner layer enriched in Cr species, while only a Fe-concentrated layer for carbon steel. According to the XPS analysis results, as the pH decreases, more stable and protective Cr oxides are enriched in the film on Cr10Mo1 steel while Fe oxides gradually decompose. Higher content of Cr oxides in the film layer provides Cr10Mo1 corrosion-resistant steel more excellent passivity at lower pH.

Passive behaviour of alloy corrosion-resistant steel Cr10Mo1 in simulating concrete pore solutions with different pH

Energy Technology Data Exchange (ETDEWEB)

Ai, Zhiyong, E-mail: 230139452@seu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Jiang, Jinyang, E-mail: jiangjinyang16@163.com [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Sun, Wei, E-mail: sunwei@seu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Song, Dan, E-mail: songdancharls@hhu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); College of Mechanics and Materials, Hohai University, Nanjing 210098, Jiangsu (China); Ma, Han, E-mail: mahan-iris@shasteel.cn [Research Institute of Jiangsu Shasteel Iron and Steel, Zhangjiagang 215625, Jiangsu (China); Zhang, Jianchun, E-mail: Zhangjc-iris@shasteel.cn [Research Institute of Jiangsu Shasteel Iron and Steel, Zhangjiagang 215625, Jiangsu (China); Wang, Danqian, E-mail: wonderbaba@126.com [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China)

2016-12-15

Highlights: • A new alloy corrosion-resistant steel Cr10Mo1 is developed for reinforcing rebar of concrete in severe environments. • The effects of pH on the passive behaviour of Cr10Mo1 steel compared with plain carbon steel were studied systematically by electrochemical techniques and surface analysis. • The mechanism for self-reinforcing passivity against carbonation of the corrosion-resistant steel is revealed. - Abstract: The passive behaviour of new alloy corrosion-resistant steel Cr10Mo1 and plain carbon steel (as a comparison) in simulating concrete pore solutions of different pH (ranging from 13.5 to 9.0) under open circuit potential conditions, was evaluated by various electrochemical techniques: potentiodynamic polarization, capacitance measurements and electrochemical impedance spectroscopy. The chemical composition and structure of passive films were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The electrochemical responses of passive films show that Cr10Mo1 steel has an increasing passivity with pH decreasing while carbon steel dose conversely, revealing carbonation does no negative effect on passivation of the corrosion-resistant steel. SIMS reveals that the passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer mainly consisting of Fe oxides and hydroxides, and an inner layer enriched in Cr species, while only a Fe-concentrated layer for carbon steel. According to the XPS analysis results, as the pH decreases, more stable and protective Cr oxides are enriched in the film on Cr10Mo1 steel while Fe oxides gradually decompose. Higher content of Cr oxides in the film layer provides Cr10Mo1 corrosion-resistant steel more excellent passivity at lower pH.

Structural analysis of surface film on alloy 600 formed under environment of PWR primary water

Energy Technology Data Exchange (ETDEWEB)

Terachi, Takumi; Totsuka, Nobuo; Yamada, Takuyo; Nakagawa, Tomokazu [Inst. of Nuclear Safety System Inc., Mihama, Fukui (Japan); Deguchi, Hiroshi [Kansai Electric Power Co., Inc., Osaka (Japan); Horiuchi, Masaki; Oshitani, Masato [Kanden Kako Co., Ltd., Osaka (Japan)

2002-09-01

It has been shown by one of the present authors and so forth that PWSCC of alloy 600 relates to dissolved hydrogen concentration (DH) in water and oxide film structure. However, the mechanism of PWSCC has not been clear yet. Therefore, in order to investigate relationship between them, structural analysis of the oxide film formed under the environment of PWR primary water was carried out by using X-ray diffraction, the scanning electron microscope and the transmission electron microscope. Especially, to perform accurate analysis, the synchrotron orbital radiation with SPring-8 was tried to use for thin film X-ray diffraction measurement. From the results, observed are as follows: 1. the oxide film is mainly composed of NiO, under the condition without hydrogen. 2. In the environment of DH 2.75ppm, the oxide film forms thin spinel structures. 3. On the other hand, needlelike oxides are formed at DH 1ppm. For this reason, around 1ppm of DH there would be the boundary that stable NiO and spinel oxide generate, and it agrees with the peak range of the PWSCC susceptibility on hydrogen. From this, it is suggested that the boundary of NiO/spinel oxide affects the SCC susceptibility. (author)

EFFECT OF PHOSPHORIC ACID CONCENTRATION AND ANODIZING TIME ON THE PROPERTIES OF ANODIC FILMS ON TITANIUM

Directory of Open Access Journals (Sweden)

DIMAS L. TORRES

2015-07-01

Full Text Available In this study, it was investigated the influence of electrolyte concentration and anodizing time on the electrochemical behaviour and morphology of anodic films formed on commercially pure Ti. Electrochemical methods and surface analyses were used to characterize the films. It was found that the electrolyte concentration and anodizing time affect the growth and protective characteristics of films in a physiologic medium. It was possible to observe their non-uniformity on Ti substrates under the tested conditions. In potentiodynamic profiles, it was observed that passivation current values are affected by an anodizing time increase. Variations in impedance spectra were associated with an increase of defects within the film.

Hydrothermally formed three-dimensional nanoporous Ni(OH)2 thin-film supercapacitors.

Science.gov (United States)

Yang, Yang; Li, Lei; Ruan, Gedeng; Fei, Huilong; Xiang, Changsheng; Fan, Xiujun; Tour, James M

2014-09-23

A three-dimensional nanoporous Ni(OH)2 thin-film was hydrothermally converted from an anodically formed porous layer of nickel fluoride/oxide. The nanoporous Ni(OH)2 thin-films can be used as additive-free electrodes for energy storage. The nanoporous layer delivers a high capacitance of 1765 F g(-1) under three electrode testing. After assembly with porous activated carbon in asymmetric supercapacitor configurations, the devices deliver superior supercapacitive performances with capacitance of 192 F g(-1), energy density of 68 Wh kg(-1), and power density of 44 kW kg(-1). The wide working potential window (up to 1.6 V in 6 M aq KOH) and stable cyclability (∼90% capacitance retention over 10,000 cycles) make the thin-film ideal for practical supercapacitor devices.

Thermal neutron imaging through XRQA2 GAFCHROMIC films coupled with a cadmium radiator

Energy Technology Data Exchange (ETDEWEB)

Sacco, D. [INFN – LNF, Via E. Fermi n.40, Frascati, 00044 Roma (Italy); INAIL – DIT, Via di Fontana Candida n.1, 00040 Monteporzio Catone (Italy); Bedogni, R., E-mail: roberto.bedogni@lnf.infn.it [INFN – LNF, Via E. Fermi n.40, Frascati, 00044 Roma (Italy); Bortot, D. [Politecnico di Milano, Dipartimento di Energia, Via La Masa 34, 20156 Milano (Italy); INFN – Milano, Via Celoria16, 20133 Milano (Italy); Palomba, M. [ENEA Casaccia, Via Anguillarese, 301, S. Maria di Galeria, 00123 Roma (Italy); Pola, A. [Politecnico di Milano, Dipartimento di Energia, Via La Masa 34, 20156 Milano (Italy); INFN – Milano, Via Celoria16, 20133 Milano (Italy); Introini, M.V.; Lorenzoli, M. [Politecnico di Milano, Dipartimento di Energia, Via La Masa 34, 20156 Milano (Italy); Gentile, A. [INFN – LNF, Via E. Fermi n.40, Frascati, 00044 Roma (Italy); Strigari, L. [Laboratory of Medical Physics, Regina Elena National Cancer Institute, Via E. Chianesi 53, 00144 Roma (Italy); Pressello, C. [Department of Medical Physics, Azienda Ospedaliera San Camillo Forlanini, Circonvallazione Gianicolense 87, 00152 Roma (Italy); Soriani, A. [Laboratory of Medical Physics, Regina Elena National Cancer Institute, Via E. Chianesi 53, 00144 Roma (Italy); Gómez-Ros, J.M. [INFN – LNF, Via E. Fermi n.40, Frascati, 00044 Roma (Italy); CIEMAT, Av. Complutense 40, 28040 Madrid (Spain)

2015-10-21

A simple and inexpensive method to perform passive thermal neutron imaging on large areas was developed on the basis of XRQA2 GAFCHROMIC films, commonly employed for quality assurance in radiology. To enhance their thermal neutron response, the sensitive face of film was coupled with a 1 mm thick cadmium radiator, forming a sandwich. By exchanging the order of Cd filter and sensitive film with respect to the incident neutron beam direction, two different configurations (beam-Cd-film and beam-film-Cd) were identified. These configurations were tested at thermal neutrons fluence values in the range 10{sup 9}–10{sup 10} cm{sup −2}, using the ex-core radial thermal neutron column of the ENEA Casaccia – TRIGA reactor. The results are presented in this work.

The Effects of Acid Passivation, Tricresyl Phosphate Pre-Soak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

Science.gov (United States)

Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar

1997-01-01

The boundary-lubrication performance of perfluoropolyether (PFPE) thin films in the presence of passivated 440 C stainless steel is presented. The study utilized a standard ball-on-disc tribometer. Stainless steel surfaces were passivated with one of four techniques: 1) submersion in a chromic acid bath for 30 minutes at 46 C, 2) submersion in a chromic acid bath for 60 minutes at 56 C, 3) submersion in a tricresyl phosphate (TCP) bath for 2 days at 107 C, or 4) UV/Ozone treated for 15 minutes. After passivation, each disc had a 400 A film of PFPE (hexafluoropropene oxide) applied to it reproducibly (+/- 20%) and uniformly (+/- 15%) using a film deposition device. The lifetimes of these films were quantified by measuring the number of sliding wear cycles required to induce an increase in the friction coefficient from an initial value characteristic of the lubricated wear couple to a final, or failure value, characteristic of an unlubricated, unpassivated wear couple. The lubricated lifetime of the 440 C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray Photoelectron Spectroscopy (XPS). It was found that chromic acid passivation altered the Cr to Fe ratio of the surface. TCP passivation resulted in a FePO4 layer on the surface, while UV/Ozone passivation only removed the carbonaceous contamination layer. None of the passivation techniques were found to dramatically increase the oxide film thickness.

Fabrication of PDMS/SWCNT thin films as saturable absorbers

International Nuclear Information System (INIS)

Hernandez-Romano, I; Sanchez-Mondragon, J J; Davila-Rodriguez, J; Delfyett, P J; May-Arrioja, D A

2011-01-01

We present a novel technique to fabricate a saturable absorber thin film based on Polydimethylsiloxane doped with Single Wall Carbon Nanotubes. Using this film a passive mode-locked fiber laser in a standard ring cavity configuration was built by inserting the film between two angled connectors. Self-starting passively mode-locked laser operation was easily observed. The generated pulses have a width of 1.26 ps at a repetition rate of 22.7 MHz with an average power of 4.89 mW.

Surface passivation of high-purity germanium gamma-ray detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

1993-01-01

The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

Nitridation of SiO2 for surface passivation

Science.gov (United States)

Lai, S. K. C.

1985-01-01

An attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.

Reorganization of lipid nanocapsules at air-water interface: Part 2. Properties of the formed surface film.

Science.gov (United States)

Minkov, I; Ivanova, Tz; Panaiotov, I; Proust, J; Saulnier, P

2005-09-01

The state, electrical and dilatational rheological properties of surface films formed at air-water interface from lipid nanocapsules (LNC) with various compositions as well as model monolayers formed by the LNC constituents-Labrafac, Solutol and Lipoid are investigated. These nanocapsules constitute potential drug delivery systems where lypophilic drug will be loaded in their core. The study of the model Labrafac/Solutol (Lab/Sol) mixed monolayers shows behavior close to the ideal. Small negative deviations in the mean molecular areas a and dipole moments mu are observed. All studied monolayers have elastic behavior during the small continuous compressions. The comparison between the properties of surface films formed from LNC with those of the model monolayers confirms the idea developed in the kinetic study that the surface films formed after a rapid disaggregation of the unstable nanocapsule fraction (LNC I) contains mainly Labrafac and Solutol. The Labrafac molar part (xLab) in the formed Lab/Sol mixed layer is established.

Rheological and structural characterisation of film-forming solutions and biodegradable edible film made from kefiran as affected by various plasticizer types.

Science.gov (United States)

Ghasemlou, Mehran; Khodaiyan, Faramarz; Oromiehie, Abdulrasoul

2011-11-01

The rheological properties of kefiran film-forming solutions, as well as the structural characterisation of the resulting films, were investigated as a function of various plasticizer types. The behaviours of the storage (G') and loss (G″) moduli as a function of frequency were typical of gel-like material, with the G' higher than the G″. Kefiran-based films, which may find application as edible films, were prepared by a casting and solvent-evaporation method. Possible interaction between the adjacent chains in the kefiran polymer and various plasticizers was proven by Fourier-transform infrared spectroscopy (FT-IR). The crystallinity of plasticized kefiran film was also analysed using X-ray diffraction (XRD); this revealed an amorphous-crystalline structure. These results were explained by the film's microstructure, which was analysed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The present study has helped determine possible interactions of kefiran, plasticizer and water molecules in determining film properties. Copyright © 2011 Elsevier B.V. All rights reserved.

Effect of passivation with CO on the electrochemical corrosion behavior of uranium-niobium alloy

International Nuclear Information System (INIS)

Fu Xiaoguo; Dai Lianxin; Zou Juesheng; Bai Chaomao; Wang Xiaolin

2000-01-01

Electrochemical studies are performed to investigate the corrosion resistance of uranium-niobium alloy before and after passivated with carbon monoxide. Using X-ray photoelectron spectroscopy (XPS), the surface composition of specimen passivated with carbon monoxide is determined. The corrosion resistance of uranium-niobium alloy is well improved because the passive layer (UC/UC x O y + Nb 2 O 5 + UO 2 ) on surface serves as passive film and increases the anodic impedance after the specimen is passivated with carbon monoxide

Self Passivating W-based Alloys as Plasma Facing Material

International Nuclear Information System (INIS)

Koch, F.; Koeppl, S.; Bolt, H.

2007-01-01

Full text of publication follows: Tungsten (W) is presently the main candidate material for the plasma-facing protection of future fusion power reactors due to the low sputter erosion under bombardment by energetic D, T and He ions. Thus a W-based protection material may provide a wall erosion lifetime of the order of five years which is a pre-requisite for economic fusion reactor operation. A potential problem with the use of pure W in a fusion reactor is the formation of radioactive and highly volatile WO 3 compounds and their potential release under accidental conditions. A loss-of-coolant event in a He-cooled reactor would lead to a temperature rise to 1100 deg. C after approx. 10 to 30 days due to the nuclear decay heat of the in-vessel components. In such a situation additional accidental intense air ingress into the reactor vessel would lead to the formation of WO 3 and subsequent evaporation of radioactive (WO 3 ) x -clusters. The use of self passivating W alloys either as bulk material or as thick coating on the steel wall may be a passively safe alternative for the plasma-facing protection. The use of this material would eliminate the above mentioned concern related to pure W. To enable the formation of a protective film in oxidizing atmosphere which seals the tungsten surface from further oxidation, different elements have been investigated as corrosion protection additives. Therefore binary and ternary tungsten alloys were synthesised using magnetron sputtering. The oxidation behaviour of films deposited on inert substrates was measured with a thermo-balance set up under synthetic air at temperatures up to 1000 deg. C. Binary alloys of W-Si showed good self passivation properties by forming a SiO 2 film at the surface. The oxidation rate of a compound containing 11 wt.% Si was reduced by a factor of 10 2 compared to pure tungsten between 800 deg. C and 1000 deg. C. Using ternary alloys the oxidation behaviour could be further improved. A compound of W

Microstructure evolution in pulsed laser deposited epitaxial Ge-Sb-Te chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Ross, Ulrich; Lotnyk, Andriy, E-mail: andriy.lotnyk@iom-leipzig.de; Thelander, Erik; Rauschenbach, Bernd

2016-08-15

The thin film deposition and structure of highly oriented telluride compounds is of particular interest for phase-change applications in next-generation non-volatile memory such as heterostructure designs, as well as for the investigation of novel optical, thermoelectric and ferroelectric properties in layered telluride compounds. In this work, epitaxial Ge-Sb-Te thin films were successfully produced by pulsed laser deposition on silicon with and without amorphous SiO{sub x} interlayer at elevated process temperatures from a Ge{sub 2}Sb{sub 2}Te{sub 5} target. Aberration-corrected high-resolution scanning transmission electron microscopy (STEM) imaging reveals a distinct interface configuration of the trigonal phase connected by a quasi van der Waals gap (vacancy) to the Sb/Te-passivated single crystalline Si substrate, yet also an intermediate textured growth regime in which the substrate symmetry is only weakly coupled to the thin film orientation, as well as strong deviation of composition at high deposition temperatures. Textured growth of Ge-Sb-Te thin film was also observed on SiO{sub x}/Si substrate with no evidence of an intermediate Sb/Te surface layer on top of an SiO{sub x} layer. In addition, particular defect structures formed by local reorganization of the stacking sequence across the vacancy gap are observed and appear to be intrinsic to these van der Waals-layered compounds. Theoretical image simulations of preferred stacking sequences can be matched to individual building blocks in the Ge-Sb-Te grain. - Highlights: • Atomic-resolution Cs-corrected STEM imaging of PLD deposited Ge-Sb-Te thin films. • Changing of overall composition with increasing deposition temperature. • Direct imaging of surface passivation Sb/Te layer at the Ge-Sb-Te/Si(111) interface. • The Sb/Te passivation layer is not a prerequisite for highly oriented growth of Ge-Sb-Te thin films.

Integrated Passive And Wireless Sensor

KAUST Repository

Li, Bodong; Kosel, Jü rgen

2015-01-01

A passive and wireless sensor is provided for sensing at least one of magnetic field, temperature or humidity. The sensor can provide only one of the sensing functions, individually or any combination of them simultaneously. It can be used for various applications where magnetic field changes, temperature and/or humidity need to be measured. In one or more embodiments, a surface acoustic wave (SAW) sensor is provided that can measure one or more of a magnetic field (or current that generates the magnetic field), temperature and humidity. In one or more embodiments, a magnetoimpedence (MI) sensor (for example a thin film giant magnetoimpedance (GMI) sensor), a thermally sensitive (for example a Lithium Niobite (LiNbO.sub.3)) substrate, and a humidity sensitive film (for example a hydrogel film) can be used as sensing elements.

Integrated Passive And Wireless Sensor

KAUST Repository

Li, Bodong

2015-04-30

A passive and wireless sensor is provided for sensing at least one of magnetic field, temperature or humidity. The sensor can provide only one of the sensing functions, individually or any combination of them simultaneously. It can be used for various applications where magnetic field changes, temperature and/or humidity need to be measured. In one or more embodiments, a surface acoustic wave (SAW) sensor is provided that can measure one or more of a magnetic field (or current that generates the magnetic field), temperature and humidity. In one or more embodiments, a magnetoimpedence (MI) sensor (for example a thin film giant magnetoimpedance (GMI) sensor), a thermally sensitive (for example a Lithium Niobite (LiNbO.sub.3)) substrate, and a humidity sensitive film (for example a hydrogel film) can be used as sensing elements.

Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis

International Nuclear Information System (INIS)

Khurana, Geetika; Kumar, Nitu; Katiyar, Ram S; Misra, Pankaj; Kooriyattil, Sudheendran; Scott, James F

2016-01-01

Forming-free resistive random access memory (ReRAM) devices having low switching voltages are a prerequisite for their commercial applications. In this study, the forming-free resistive switching characteristics of graphene oxide (GO) films embedded with gold nanoparticles (Au Nps), having an enhanced on/off ratio at very low switching voltages, were investigated for non-volatile memories. The GOAu films were deposited by the electrophoresis method and as-grown films were found to be in the low resistance state; therefore no forming voltage was required to activate the devices for switching. The devices having an enlarged on/off ratio window of ∼10"6 between two resistance states at low voltages (<1 V) for repetitive dc voltage sweeps showed excellent properties of endurance and retention. In these films Au Nps were uniformly dispersed over a large area that provided charge traps, which resulted in improved switching characteristics. Capacitance was also found to increase by a factor of ∼10, when comparing high and low resistance states in GOAu and pristine GO devices. Charge trapping and de-trapping by Au Nps was the mechanism responsible for the improved switching characteristics in the films. (paper)

Multiple mechanisms quench passive spiral galaxies

Science.gov (United States)

Fraser-McKelvie, Amelia; Brown, Michael J. I.; Pimbblet, Kevin; Dolley, Tim; Bonne, Nicolas J.

2018-02-01

We examine the properties of a sample of 35 nearby passive spiral galaxies in order to determine their dominant quenching mechanism(s). All five low-mass (M⋆ environments. We postulate that cluster-scale gas stripping and heating mechanisms operating only in rich clusters are required to quench low-mass passive spirals, and ram-pressure stripping and strangulation are obvious candidates. For higher mass passive spirals, while trends are present, the story is less clear. The passive spiral bar fraction is high: 74 ± 15 per cent, compared with 36 ± 5 per cent for a mass, redshift and T-type matched comparison sample of star-forming spiral galaxies. The high mass passive spirals occur mostly, but not exclusively, in groups, and can be central or satellite galaxies. The passive spiral group fraction of 74 ± 15 per cent is similar to that of the comparison sample of star-forming galaxies at 61 ± 7 per cent. We find evidence for both quenching via internal structure and environment in our passive spiral sample, though some galaxies have evidence of neither. From this, we conclude no one mechanism is responsible for quenching star formation in passive spiral galaxies - rather, a mixture of mechanisms is required to produce the passive spiral distribution we see today.

Offset-gated poly-Si TFTs using in-situ fluorine passivation and excimer laser doping

International Nuclear Information System (INIS)

Jung, Sang Hoon; Kim, Cheon Hong; Yoo, Juhn Suk; Han, Min Koo

2000-01-01

A new low-temperature poly-Si thin film transistor (TFT) fabrication method employing in-situ fluorine passivation and excimer-laser doping is proposed to fabricate offset-gated poly-Si TFTs. In the new process, the crystallization, the in-situ fluorine passivation of the active layer, and the doping of the source/drain region are performed simultaneously with only one step of excimer laser annealing while the conventional fabrication method requires two laser annealing steps. Employing phosphosilicate glass (PSG) films as a diffusion source, we successfully accomplished excimer laser doping. The subthreshold and the on-state characteristics of the device with in-situ fluorine passivation were considerably improved. This improvement was due to the fluorine passivation effects, which cured dangling bonds and strained bonds in the poly-Si channel, the offset region, and the SiO 2 /poly-Si interface

Offset-gated poly-Si TFTs using in-situ fluorine passivation and excimer laser doping

CERN Document Server

Jung, S H; Yoo, J S; Han, M K

2000-01-01

A new low-temperature poly-Si thin film transistor (TFT) fabrication method employing in-situ fluorine passivation and excimer-laser doping is proposed to fabricate offset-gated poly-Si TFTs. In the new process, the crystallization, the in-situ fluorine passivation of the active layer, and the doping of the source/drain region are performed simultaneously with only one step of excimer laser annealing while the conventional fabrication method requires two laser annealing steps. Employing phosphosilicate glass (PSG) films as a diffusion source, we successfully accomplished excimer laser doping. The subthreshold and the on-state characteristics of the device with in-situ fluorine passivation were considerably improved. This improvement was due to the fluorine passivation effects, which cured dangling bonds and strained bonds in the poly-Si channel, the offset region, and the SiO sub 2 /poly-Si interface.

Passivation of laser-treated nickel aluminum bronze as measured by electrochemical impedance spectroscopy

International Nuclear Information System (INIS)

Klassen, R.D.; Hyatt, C.V.; Roberge, P.R.

2000-01-01

Electrochemical impedance spectroscopy was used to assess the corrosion behavior of the weld zones and surface conditions of a laser-clad nickel aluminum bronze immersed in a 3.5% neutral saline solution. The zones and conditions examined included: (i) as-cast base material; (ii) laser-clad material with the high temperature oxide from welding intact; (iii) polished laser-clad material and (iv) specimens representative of just the as-deposited and reheated zones of the laser-clad surface. A pseudo steady-state level of passivation was reached in all the samples within 40 hours. The reheated zone passivated more slowly than the as-deposited region and both weld zones passivated more quickly than the base material. Electrochemical impedance data illustrated a transition during the passivation process of the polished specimens that is consistent with the development of a film layer that restricted mass transfer. The welding oxide from the laser treatment immediately behaved as a passivation film that was indistinguishable from that which eventually develops on polished specimens. (author)

Synergy between molybdenum and nitrogen on the pitting corrosion and passive film resistance of austenitic stainless steels as a pH-dependent effect

Energy Technology Data Exchange (ETDEWEB)

Loable, Carole, E-mail: carole.loable@lepmi.grenoble-inp.fr [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Dep. Eng. Quimica, Instituto Superior Técnico-Universidade de Lisboa, Av. Rovisco Pais, 1049 001 Lisbon (Portugal); Viçosa, Isadora N., E-mail: inogueira@poli.ufrj.br [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Mesquita, Thiago J., E-mail: Thiago.mesquita@total.com [CRU Ugitech, Avenue Paul Girod, 73403 Ugine Cedex (France); Mantel, Marc, E-mail: Marc.Mantel@ugitech.com [CRU Ugitech, Avenue Paul Girod, 73403 Ugine Cedex (France); Université Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Nogueira, Ricardo P., E-mail: rnogueira@pi.ac.ae [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Department of Chemical Engineering, The Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Berthomé, Gregory, E-mail: gregory.berthome@simap.grenoble-inp.fr [Université Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Chauveau, Eric, E-mail: eric.chauveau@ugitech.fr [Department of Chemical Engineering, The Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Roche, Virginie, E-mail: virginie.roche@lepmi.grenoble-inp.fr [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France)

2017-01-15

This paper brings up some insights upon the pH dependence of the synergistic effect of Mo and N on the localized corrosion resistance of austenitic stainless steels. The objective of this work is to study the synergetic effect of Mo and N additions on corrosion and passive film properties of austenitic grades. A comparison between Mo containing (3 wt% Mo); Mo and N containing (3 wt% Mo and 0.1% N) and free Mo or free Mo and N grades of highly controlled laboratory heats was done considering their localized corrosion resistance and oxide film formation in different aggressive conditions, from neutral to alkaline pH. The passive layer was characterized by EIS and XPS analyses. The combined effect of Mo and N on the pitting potential was confirmed to be synergistic, and not just the addition of their individual effects. Moreover, this effect was found to be pH-dependent, being very positive in acid to neutral conditions whereas it was almost inexistent in high pH. - Highlights: • Laboratory austenitic stainless steels with Mo and/or N were tested. • Mo and N acted synergistically to improve pitting resistance. • Synergistic effect is pH-dependent. • N clearly enhanced the repassivation of austenitic SS in presence of Mo.

Synergy between molybdenum and nitrogen on the pitting corrosion and passive film resistance of austenitic stainless steels as a pH-dependent effect

International Nuclear Information System (INIS)

Loable, Carole; Viçosa, Isadora N.; Mesquita, Thiago J.; Mantel, Marc; Nogueira, Ricardo P.; Berthomé, Gregory; Chauveau, Eric; Roche, Virginie

2017-01-01

This paper brings up some insights upon the pH dependence of the synergistic effect of Mo and N on the localized corrosion resistance of austenitic stainless steels. The objective of this work is to study the synergetic effect of Mo and N additions on corrosion and passive film properties of austenitic grades. A comparison between Mo containing (3 wt% Mo); Mo and N containing (3 wt% Mo and 0.1% N) and free Mo or free Mo and N grades of highly controlled laboratory heats was done considering their localized corrosion resistance and oxide film formation in different aggressive conditions, from neutral to alkaline pH. The passive layer was characterized by EIS and XPS analyses. The combined effect of Mo and N on the pitting potential was confirmed to be synergistic, and not just the addition of their individual effects. Moreover, this effect was found to be pH-dependent, being very positive in acid to neutral conditions whereas it was almost inexistent in high pH. - Highlights: • Laboratory austenitic stainless steels with Mo and/or N were tested. • Mo and N acted synergistically to improve pitting resistance. • Synergistic effect is pH-dependent. • N clearly enhanced the repassivation of austenitic SS in presence of Mo.

The influence of film-forming amines on heat transfer during saturated pool boiling

Energy Technology Data Exchange (ETDEWEB)

Topp, Holger [Rostock Univ. (Germany). Mechanical Engineering; Steinbrecht, Dieter [Rostock Univ. (Germany). Dept. of Power and Environmental Technologies; Hater, Wolfgang [BK Giulini GmbH, Duesseldorf (Germany); BK Giulini, Ludwigshafen (Germany). Water Solutions; Bache, Andre de [BK Giulini, Ludwigshafen (Germany). Water Solutions

2010-07-15

The heat transfer coefficients during pool boiling of water at steel heating surfaces are subject to irreversible temporal changes. The influence of the responsible physicochemical processes on the steel surface was investigated by thermo-technical measurements in a special apparatus using conditioned water. For this purpose an oxide layer, whose surface structure, composition and thickness vary with the respective kind of treatment, was generated on steel tube samples under specified conditions. Due to their surface activity, film-forming amine-based organic corrosion inhibitors feature a theoretical improvement potential regarding the heat transfer in nucleate boiling at steel heating surfaces. The intensifying impact of these filming agents on bubble evaporation during pool boiling compared to a classic water treatment was quantified in long-term tests. The impact of the corresponding conditioning program was examined and characterised by means of analytical methods. Significantly higher heat transmission coefficients were determined for film-forming amine treated tubes as compared to classic conditioning. (orig.)

Passivation of bimetallic catalysts used in water treatment: prevention and reactivation.

Science.gov (United States)

Chen, Jianming; Gillham, Robert W; Gui, Lai

2013-01-01

With respect to degradation rates and the range in contaminants treated, bimetals such as Ni-Fe or Pd-Fe generally outperform unamended granular iron. However, the catalytic enhancement is generally short-lived, lasting from a few days to months. To take advantage of the significant benefits of bimetals, this study aims at developing an effective method for the rejuvenation of passivated bimetals and alternatively, the prevention of rapid reactivity loss of bimetals. Because the most likely cause of Ni-Fe and Pd-Fe passivation is the deposition of iron oxide films over the catalyst sites, it is hypothesized that removal of the iron oxide films will restore the lost reactivity or avoiding the deposition of iron oxide films will prevent passivation. Two organic ligands (ethylenediaminetetraacetic acid (EDTA), and [s,s]-ethylenediaminedisuccinate acid ([s,s]-EDDS)) and two acids (citric acid and sulphuric acid) were tested as possible chemical reagents for both passivation rejuvenation and prevention. Trichloroethene (TCE) and Ni-Fe were chosen as probes for chlorinated solvents and bimetals respectively. The test was carried out using small glass columns packed with Ni-Fe. TCE solution containing a single reagent at various concentrations was pumped through the Ni-Fe columns with a residence time in the Ni-Fe of about 6.6 min. TCE concentrations in the influent and effluent were measured to evaluate the performance of each chemical reagent. The results show that (i) for passivated Ni-Fe, flushing with a low concentration of acid or ligand solution without mechanical mixing can fully restore the lost reactivity; and (ii) for passivation prevention, adding a small amount of a ligand or an acid to the feed solution can successfully prevent or at least substantially reduce Ni-Fe passivation. All four chemicals tested are effective in both rejuvenation and prevention, but sulphuric acid and citric acid are considered to be the most practical reagents due to their

Nuclear microanalysis of oxide films on structural steel

International Nuclear Information System (INIS)

Istomin, I.V.; Karabash, V.A.; Maisyukov, V.D.; Sosnin, A.N.; Shorin, V.S.

1989-01-01

Studies of the behavior of structural materials in nuclear power plants have indicated the important role of oxide films on metals, especially metals of the iron group. The films may be formed as a result of the corrosion of the metal in an aggressive coolant. At the same time, some oxide films have anticorrosive properties and can be produced specially by the introduction of inhibitor-passivators, e.g., molecular oxygen, into the aggressive medium. Experimental data on the film growth rate make it possible to determine the kinetics of the oxidation process, the nature of the diffusion of the main components through the film, and the role of the phase transitions (crystal-chemical transformations) and point defects during the migration of oxygen and metal ions through the oxide. In this study nuclear microanalysis is used to measure the parameters of oxide films formed on 10Cr2Mo and 1Cr18Ni10Ti steels in steam in the temperature range 320-620C. In this method the film parameters in the general analysis of the energy spectra of deuterons back-scattered from iron nuclei and protons in the case of the 16 O(d,p 1 ) 17 O nuclear reaction. With this approach and an initial deuteron energy E o = 0.9 MeV the range of the measurable thickness t of the films is 0.001-1.5 mg/cm 2 . The data obtained not only confirm the high sensitivity of the nuclear microanalysis method but also demonstrate that it can be used for nondestructive quality control of the surface

Rationalising polymer selection for supersaturated film forming systems produced by an aerosol spray for the transdermal delivery of methylphenidate.

Science.gov (United States)

Edwards, A; Qi, S; Liu, F; Brown, M B; McAuley, W J

2017-05-01

Film forming systems offer a number of advantages for topical and transdermal drug delivery, in particular enabling production of a supersaturated state which can greatly improve drug absorption and bioavailability. However the suitability of individual film forming polymers to stabilise the supersaturated state and optimise delivery of drugs is not well understood. This study reports the use of differential scanning calorimetry (DSC) to measure the solubility of methylphenidate both as the free base and as the hydrochloride salt in two polymethacrylate copolymers, Eudragit RS (EuRS) and Eudragit E (EuE) and relates this to the ability of films formed using these polymers to deliver methylphenidate across a model membrane. EuRS provided greater methylphenidate delivery when the drug was formulated as the free base in comparison EuE because the lower solubility of the drug in EuRS provided a higher degree of drug saturation in the polymeric film. In contrast EuE provided greater delivery of methylphenidate hydrochloride as EuRS could not prevent its crystallisation from a supersaturated state. Methylphenidate flux across the membrane could be directly related to degree of saturation of the drug in the film formulation as estimated by the drug solubility in the individual polymers demonstrating the importance of drug solubility in the polymer included in film forming systems for topical/transdermal drug delivery. In addition DSC has been demonstrated to be a useful tool for determining the solubility of drugs in polymers used in film forming systems and the approaches outlined here are likely to be useful for predicting the suitability of polymers for particular drugs in film forming transdermal drug delivery systems. Copyright © 2017. Published by Elsevier B.V.

A XPS Study of the Passivity of Stainless Steels Influenced by Sulfate-Reducing Bacteria.

Science.gov (United States)

Chen, Guocun

The influence of sulfate-reducing bacteria (SRB) on the passivity of type 304 and 317L stainless steels (SS) was investigated by x-ray photoelectron spectroscopy (XPS), microbiological and electrochemical techniques. Samples were exposed to SRB, and then the resultant surfaces were analyzed by XPS, and the corrosion resistance by potentiodynamic polarization in deaerated 0.1 M HCl. To further understand their passivity, the SRB-exposed samples were analyzed by XPS after potentiostatic polarization at a passive potential in the hydrochloric solution. The characterization was performed under two surface conditions: unrinsed and rinsed by deaerated alcohol and deionized water. Comparisons were made with control samples immersed in uninoculated medium. SRB caused a severe loss of the passivity of 304 SS through sulfide formation and possible additional activation to form hexavalent chromium. The sulfides included FeS, FeS_2, Cr_2S _3, NiS and possibly Fe_ {rm 1-x}S. The interaction took place nonuniformly, resulting in undercutting of the passive film and preferential hydration of inner surface layers. The bacterial activation of the Cr^{6+ }^ecies was magnified by subsequent potentiostatic polarization. In contrast, 317L SS exhibited a limited passivity. The sulfides were formed mainly in the outer layers. Although Cr^{6+}^ecies were observed after the exposure, they were dissolved upon polarization. Since 317L SS has a higher Mo content, its higher passivity was ascribed to Mo existing as molybdate on the surface and Mo^{5+} species in the biofilm. Consequently, the interaction of SRB with Mo was studied. It was observed that molybdate could be retained on the surfaces of Mo coupons by corrosion products. In the presence of SRB, however, a considerable portion of the molybdate interacted with intermediate sulfur -containing proteins, forming Mo(V)-S complexes and reducing bacterial growth and sulfate reduction. The limited insolubility of the Mo(V)-S complexes in 0

Enhanced photoelectrocatalytic performance of α-Fe2O3 thin films by surface plasmon resonance of Au nanoparticles coupled with surface passivation by atom layer deposition of Al2O3.

Science.gov (United States)

Liu, Yuting; Xu, Zhen; Yin, Min; Fan, Haowen; Cheng, Weijie; Lu, Linfeng; Song, Ye; Ma, Jing; Zhu, Xufei

2015-12-01

The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposition. The Au nanoparticles (NPs) and Al2O3 shell by atom layer deposition were further introduced to modify the photoelectrodes. Different constructions were made with different deposition orders of Au and Al2O3 on Fe2O3 films. The Fe2O3-Au-Al2O3 construction shows the best PEC performance with 1.78 times enhancement by localized surface plasmon resonance (LSPR) of NPs in conjunction with surface passivation of Al2O3 shells. Numerical simulation was carried out to investigate the promotion mechanisms. The high PEC performance for Fe2O3-Au-Al2O3 construction electrode could be attributed to the Al2O3 intensified LSPR, effective surface passivation by Al2O3 coating, and the efficient charge transfer due to the Fe2O3-Au Schottky junctions.

Surface Defect Passivation and Reaction of c-Si in H2S.

Science.gov (United States)

Liu, Hsiang-Yu; Das, Ujjwal K; Birkmire, Robert W

2017-12-26

A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H 2 S) is demonstrated in this paper. A high-level passivation quality with an effective minority carrier lifetime (τ eff ) of >2000 μs corresponding to a surface recombination velocity of passivation by monolayer coverage of S on the Si surface. However, S passivation of the Si surface is highly unstable because of thermodynamically favorable reaction with atmospheric H 2 O and O 2 . This instability can be eliminated by capping the S-passivated Si surface with a protective thin film such as low-temperature-deposited amorphous silicon nitride.

Forming of film surface of very viscous liquid flowing with gas in pipes

Directory of Open Access Journals (Sweden)

Czernek Krystian

2017-01-01

Full Text Available The study presents the possible use of optoelectronic system for the measurement of the values, which are specific for hydrodynamics of two-phase gas liquid flow in vertical pipes, where a very-high-viscosity liquid forms a falling film in a pipe. The experimental method was provided, and the findings were presented and analysed for selected values, which characterize the two-phase flow. Attempt was also made to evaluate the effects of flow parameters and properties of the liquid on the gas-liquid interface value, which is decisive for the conditions of heat exchange and mass transfer in falling film equipment. The nature and form of created waves at various velocities were also described.

Depth profiling of hydrogen passivation of boron in Si(100)

Science.gov (United States)

Huang, L. J.; Lau, W. M.; Simpson, P. J.; Schultz, P. J.

1992-08-01

The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220 °C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

Bilayered buccal films as child-appropriate dosage form for systemic administration of propranolol.

Science.gov (United States)

Abruzzo, Angela; Nicoletta, Fiore Pasquale; Dalena, Francesco; Cerchiara, Teresa; Luppi, Barbara; Bigucci, Federica

2017-10-05

Buccal mucosa has emerged as an attractive site for systemic administration of drug in paediatric patients. This route is simple and non-invasive, even if the saliva wash-out effect and the relative permeability of the mucosa can reduce drug absorption. Mucoadhesive polymers represent a common employed strategy to increase the contact time of the formulation at the application site and to improve drug absorption. Among the different mucoadhesive dosage forms, buccal films are particularly addressed for paediatric population since they are thin, adaptable to the mucosal surface and able to offer an exact and flexible dose. The objective of the present study was to develop bilayered buccal films for the release of propranolol hydrochloride. A primary polymeric layer was prepared by casting and drying of solutions of film-forming polymers, such as polyvinylpyrrolidone (PVP) or polyvinylalcohol (PVA), added with different weight ratios of gelatin (GEL) or chitosan (CH). In order to achieve unidirectional drug delivery towards buccal mucosa, a secondary ethylcellulose layer was applied onto the primary layer. Bilayered films were characterized for their physico-chemical (morphology, thickness, drug content and solid state) and functional (water uptake, mucoadhesion, drug release and permeation) properties. The inclusion of CH into PVP and PVA primary layer provided the best mucoadhesion ability. Films containing CH provided a lower drug release with respect to films containing GEL and increased the amount of permeated drug through buccal mucosa, thanks to its ability of interfering with the lipid organization. The secondary ethylcellulose layer did not interfere with drug permeation, but it could limit drug release in the buccal cavity. Copyright © 2017 Elsevier B.V. All rights reserved.

Superacid Passivation of Crystalline Silicon Surfaces.

Science.gov (United States)

Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

2016-09-14

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

The Effects of Acid Passivation, Tricresyl Phosphate Presoak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

Science.gov (United States)

Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar; Jansen, Mark J.

2001-01-01

The boundary-lubrication performance of two perfluoropolyether (PFPE) thin films in the presence of passivated 440C stainless steel is presented. The study used a standard ball on disk (BoD) tribometer in dry nitrogen and a vacuum spiral orbit tribometer (SOT). Stainless steel surfaces were passivated with one of four techniques: high and low temperature chromic acid bath, a tricresyl phosphate (TCP) soak, or UV/Ozone treated for 15 min. After passivation, each BoD disk had a 400A film of Krytox 16256 (PFPE) applied to it. The lifetimes of these films were quantified by measuring the number of sliding cycles before an increase in friction occurred. The lubricated lifetime of the 440C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray photoelectron spectroscopy (XPS). The SOT was used to examine the effects of the TCP treatment on the lubricated lifetime of another PFPE, Brayco 815Z, under rolling conditions. None of the passivation techniques were found to dramatically increase the oxide film thickness or lubricated lifetimes.

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

Energy Technology Data Exchange (ETDEWEB)

An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-08-04

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

Influence of cavitation on the passive behaviour of duplex stainless steels in aqueous LiBr solutions

International Nuclear Information System (INIS)

Garcia-Garcia, D.M.; Garcia-Anton, J.; Igual-Munoz, A.

2008-01-01

The objective of this work is to study the influence of cavitation on the passive behaviour of EN 1.4462, its filler metal (EN 1.4462F), and the welded metal (EN 1.4462W) obtained by Gas Tungsten Arc Welding using electrochemical techniques. The hydrodynamic conditions of the medium were modified using an ultrasonic-induced cavitation facility. Potentiostatic experiments were used to study the effects of cavitation on the passive behaviour of the alloys. The experiments were carried out in 850 g/L LiBr solutions with and without an inhibitor (Lithium Chromate). The solution with Li 2 CrO 4 (commercial solution) contains LiOH as the pH regulator. The potentiodynamic cyclic curves of the stainless steels under the static condition were used to set the values of the imposed potentials. In this work, the electrochemical behaviour of the alloys described by the potentiodynamic curves has been related to their passive behaviour under potentiostatic conditions when the pulses of cavitation were applied. The results demonstrate that cavitation affects the passive behaviour of the alloys; the influence depends on the potential applied and on the presence or absence of chromates in the medium. Only under certain circumstances the hydrodynamic conditions can suppose a breakdown of passive film formed under static conditions

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Directory of Open Access Journals (Sweden)

Jia Ge

2014-01-01

Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

Highly stable carbon-doped Cu films on barrierless Si

International Nuclear Information System (INIS)

Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

2011-01-01

Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

Potassium ions in SiO2: electrets for silicon surface passivation

Science.gov (United States)

Bonilla, Ruy S.; Wilshaw, Peter R.

2018-01-01

This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm-2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide-silicon interface with SRV  industrial manufacture of silicon optoelectronic devices.

Epoxy-Based Organogels for Thermally Reversible Light Scattering Films and Form-Stable Phase Change Materials.

Science.gov (United States)

Puig, Julieta; Dell' Erba, Ignacio E; Schroeder, Walter F; Hoppe, Cristina E; Williams, Roberto J J

2017-03-29

Alkyl chains of β-hydroxyesters synthesized by the capping of terminal epoxy groups of diglycidylether of bisphenol A (DGEBA) with palmitic (C16), stearic (C18), or behenic (C22) fatty acids self-assemble forming a crystalline phase. Above a particular concentration solutions of these esters in a variety of solvents led to supramolecular (physical) gels below the crystallization temperature of alkyl chains. A form-stable phase change material (FS-PCM) was obtained by blending the ester derived from behenic acid with eicosane. A blend containing 20 wt % ester was stable as a gel up to 53 °C and exhibited a heat storage capacity of 161 J/g, absorbed during the melting of eicosane at 37 °C. Thermally reversible light scattering (TRLS) films were obtained by visible-light photopolymerization of poly(ethylene glycol) dimethacrylate-ester blends (50 wt %) in the gel state at room temperature. The reaction was very fast and not inhibited by oxygen. TRLS films consisted of a cross-linked methacrylic network interpenetrated by the supramolecular network formed by the esters. Above the melting temperature of crystallites formed by alkyl chains, the film was transparent due to the matching between refractive indices of the methacrylic network and the amorphous ester. Below the crystallization temperature, the film was opaque because of light dispersion produced by the organic crystallites uniformly dispersed in the material. Of high significance for application was the fact that the contrast ratio did not depend on heating and cooling rates.

Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

International Nuclear Information System (INIS)

Meral, Kadem; Arik, Mustafa; Onganer, Yavuz

2016-01-01

Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Meral, Kadem, E-mail: kademm@atauni.edu.tr; Arik, Mustafa, E-mail: marik@tatauni.edu.tr; Onganer, Yavuz, E-mail: yonganer@atauni.edu.tr [Department of Chemistry, Faculty of Sciences, Atatürk University, 25240 Erzurum (Turkey)

2016-04-18

Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

Microstructure and protection characteristics of the naturally formed oxide films on Mg–xZn alloys

International Nuclear Information System (INIS)

Song, Yingwei; Han, En-Hou; Dong, Kaihui; Shan, Dayong; Yim, Chang Dong; You, Bong Sun

2013-01-01

Highlights: •The oxide films on Mg–xZn alloys consist of similar chemical composition. •The higher Zn content results in the thicker but higher defect of the oxide films. •The oxide films exhibit different protection performance under various potentials. -- Abstract: The naturally formed oxide films on Mg–2Zn and Mg–5Zn alloys were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The oxide films on the both alloys present a similar chemical composition, consisting of surface layer of basic magnesium carbonate and MgO following with MgO and ZnO, but the oxide film on Mg–5Zn is thicker and contains more defects. The protection performance of the oxide film on Mg–5Zn is worse under open circuit potential but better in a suitable anodic potential scope compared with that on Mg–2Zn alloy

Corrosion Inhibiting Mechanism of Nitrite Ion on the Passivation of Carbon Steel and Ductile Cast Iron for Nuclear Power Plants

Directory of Open Access Journals (Sweden)

K. T. Kim

2015-01-01

Full Text Available While NaNO2 addition can greatly inhibit the corrosion of carbon steel and ductile cast iron, in order to improve the similar corrosion resistance, ca. 100 times more NaNO2 addition is needed for ductile cast iron compared to carbon steel. A corrosion and inhibition mechanism is proposed whereby NO2- ion is added to oxidize. The NO2- ion can be reduced to nitrogen compounds and these compounds may be absorbed on the surface of graphite. Therefore, since nitrite ion needs to oxidize the surface of matrix and needs to passivate the galvanic corroded area and since it is absorbed on the surface of graphite, a greater amount of corrosion inhibitor needs to be added to ductile cast iron compared to carbon steel. The passive film of carbon steel and ductile cast iron, formed by NaNO2 addition showed N-type semiconductive properties and its resistance, is increased; the passive current density is thus decreased and the corrosion rate is then lowered. In addition, the film is mainly composed of iron oxide due to the oxidation by NO2- ion; however, regardless of the alloys, nitrogen compounds (not nitrite were detected at the outermost surface but were not incorporated in the inner oxide.

Zn Thin Film Deposition for Fe Layer Shielding Use the Sputtering Technique on Cylindrical Form

International Nuclear Information System (INIS)

Yunanto; Tjipto Sujitno, BA; Suprapto; Simbolon, Sahat

2002-01-01

Deposition of thin film on Fe substrate use sputtering technique on cylindrical form was carried out. The purpose of this research is to protect Fe due to the corrosion with Zn thin film. Sputtering method was proposed to protect a component of complex form. Substrate has functioned as anode, meanwhile target in cylindrical form as a cathode. Argon ion from anode bombard Zn with enough energy for releasing Zn. Zn atom would scatter and some of then was focused on the anode. For testing Zn atom on Fe by using XRF and corrosion rate with potentiostat. It was found that corrosion rate was decreased from 0.051 mpy to 0.031 mpy on 0.63 % of Fe substrate. (author)

Optical and electrical characterizations of a single step ion beam milling mesa devices of chloride passivated PbS colloidal quantum dots based film

International Nuclear Information System (INIS)

Hechster, Elad; Sarusi, Gabby; Shapiro, Arthur; Lifshitz, Efrat

2016-01-01

Colloidal Quantum Dots (CQDs) are of increasing interest, thanks to their quantum size effect that gives rise to their usage in various applications, such as biological tagging, solar cells and as the sensitizing layer of night vision devices. Here, we analyze the optical absorbance of chloride passivated PbS CQDs as well as revealing a correlation between their photoluminescence and sizes distribution, using theoretical models and experimental results from the literature. Next, we calculate the CQDs resistivity as a film. Although resistivity can be calculated from sheet resistance measurement using four point probes, such measurement is usually carried-out on the layer’s surface that in most cases has dangling bonds and surface states, which might affect the charges flow and modify the resistivity. Therefore; our approach, which was applied in this work, is to extract the actual resistivity from measurements that are performed along the film’s thickness (z-direction). For this intent, we fabricated gold capped PbS mesas devices using a single step Ion Beam Milling (IBM) process where we milled the gold and the PbS film continually, and then measured the vertical resistance. Knowing the mesas’ dimensions, we calculate the resistivity. To the best of our knowledge, no previous work has extracted, vertically, the resistivity of chloride passivated PbS CQDs using the above method.

Optical and electrical characterizations of a single step ion beam milling mesa devices of chloride passivated PbS colloidal quantum dots based film

Energy Technology Data Exchange (ETDEWEB)

Hechster, Elad, E-mail: elad.hechster@gmail.com; Sarusi, Gabby [Electro-Optics Engineering Unit and Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, 84100 Israel (Israel); Shapiro, Arthur; Lifshitz, Efrat [Schulich Faculty of Chemistry, Solid State Institute, Russel Berrie Nanotechnology Institute, Technion – Israel Institute of technology, 32000 Haifa (Israel)

2016-07-15

Colloidal Quantum Dots (CQDs) are of increasing interest, thanks to their quantum size effect that gives rise to their usage in various applications, such as biological tagging, solar cells and as the sensitizing layer of night vision devices. Here, we analyze the optical absorbance of chloride passivated PbS CQDs as well as revealing a correlation between their photoluminescence and sizes distribution, using theoretical models and experimental results from the literature. Next, we calculate the CQDs resistivity as a film. Although resistivity can be calculated from sheet resistance measurement using four point probes, such measurement is usually carried-out on the layer’s surface that in most cases has dangling bonds and surface states, which might affect the charges flow and modify the resistivity. Therefore; our approach, which was applied in this work, is to extract the actual resistivity from measurements that are performed along the film’s thickness (z-direction). For this intent, we fabricated gold capped PbS mesas devices using a single step Ion Beam Milling (IBM) process where we milled the gold and the PbS film continually, and then measured the vertical resistance. Knowing the mesas’ dimensions, we calculate the resistivity. To the best of our knowledge, no previous work has extracted, vertically, the resistivity of chloride passivated PbS CQDs using the above method.

Electrochemical passivation behaviour of nanocrystalline Fe80Si20 ...

Indian Academy of Sciences (India)

Abstract. Passivation behaviour of nanocrystalline coating (Fe80Si20) obtained by in situ mechanical alloying route .... is controlled by the iron oxide film in case of alloys with ..... the surface is covered, thus, producing effective protection of.

Cathodic reduction of the duplex oxide films formed on copper in air with high relative humidity at 60 deg C

International Nuclear Information System (INIS)

Seo, M.; Ishikawa, Y.; Kodaira, M.; Sugimoto, A.; Nakayama, S.; Watanabe, M.; Furuya, S.; Minamitani, R.; Miyata, Y.; Nishikata, A.; Notoya, T.

2005-01-01

The cathodic reduction of duplex air-formed oxide film on copper was performed at a constant current density of i c = -50 μA cm -2 in deaerated 0.1 M KCl solution to investigate the sequence of cathodic reduction of each oxide layer and its mechanism. The single-phase thick CuO film on copper was also cathodically reduced at i c = -50 μA cm -2 or -2.5 mA cm -2 . The surface characterizations of the air-formed oxide film and single-phase CuO film before cathodic reduction and after partial or complete cathodic reduction were performed by XPS and X-ray diffraction, respectively. The two plateau regions appeared in the potential vs. time curve during cathodic reduction of the duplex air-formed oxide film on copper, while one plateau region was observed in the potential-time curve during cathodic reduction of the single-phase CuO film on copper. The potential in the first plateau region for the air-formed film coincided with that in the plateau region for the CuO film. The results of XPS and X-ray diffraction suggested that in the first plateau region, the outer CuO layer is directly reduced to metallic Cu, while in the second plateau region, the inner Cu 2 O layer is reduced to metallic Cu

Electrochemical and Antimicrobial Properties of Diamondlike Carbon-Metal Composite Films

Energy Technology Data Exchange (ETDEWEB)

MORRISON, M. L.; BUCHANAN, R. A.; LIAW, P. K.; BERRY, C. J.; BRIGMON, R.; RIESTER, L.; JIN, C.; NARAYAN, R. J.

2005-05-11

Implants containing antimicrobial metals may reduce morbidity, mortality, and healthcare costs associated with medical device-related infections. We have deposited diamondlike carbon-silver (DLC-Ag), diamondlike carbon-platinum (DLC-Pt), and diamondlike carbon-silver-platinum (DLC-AgPt) thin films using a multicomponent target pulsed laser deposition process. Transmission electron microscopy of the DLC-silver and DLC-platinum composite films revealed that the silver and platinum self-assemble into nanoparticle arrays within the diamondlike carbon matrix. The diamondlike carbon-silver film possesses hardness and Young's modulus values of 37 GPa and 331 GPa, respectively. The diamondlike carbon-metal composite films exhibited passive behavior at open-circuit potentials. Low corrosion rates were observed during testing in a phosphate-buffered saline (PBS) electrolyte. In addition, the diamondlike carbon-metal composite films were found to be immune to localized corrosion below 1000 mV (SCE). DLC-silver-platinum films demonstrated exceptional antimicrobial properties against Staphylococcus bacteria. It is believed that a galvanic couple forms between platinum and silver, which accelerates silver ion release and provides more robust antimicrobial activity. Diamondlike carbon-silver-platinum films may provide unique biological functionalities and improved lifetimes for cardiovascular, orthopaedic, biosensor, and implantable microelectromechanical systems.

WASA-BOSS. Development and application of Severe Accident Codes. Evaluation and optimization of accident management measures. Subproject D. Study on water film cooling for PWR's passive containment cooling system. Final report

Energy Technology Data Exchange (ETDEWEB)

Huang, Xi

2016-07-15

In the present study, a new phenomenological model was developed, to describe the water film flow under conditions of a passive containment cooling system (PCCS). The new model takes two different flow regimes into consideration, i.e. continuous water film and rivulets. For water film flow, the traditional Nusselt's was modified, to consider orientation angle and surface sheer stress. The transition from water film to rivulet as well as the structure of the stable rivulet at its onset point was modeled by using the minimum energy principle (MEP) combined with conservation equations. In addition, two different contact angles, i.e. advancing angle and retreating angle, were applied to take the hysteresis effect into consideration. The models of individual processes were validated as far as possible based on experimental data selected from open literature and from collaboration partner as well. With the models a new program module was developed and implemented into the COCOSYS program. The extended COCOSYS program was applied to analyze the containment behavior of the European generic containment and the performance of the passive containment cooling system ofthe AP1000. The results indicate clearly the importance of the new model and provide information for the optimization of the PCCS of AP1000.

WASA-BOSS. Development and application of Severe Accident Codes. Evaluation and optimization of accident management measures. Subproject D. Study on water film cooling for PWR's passive containment cooling system. Final report

International Nuclear Information System (INIS)

Huang, Xi

2016-07-01

In the present study, a new phenomenological model was developed, to describe the water film flow under conditions of a passive containment cooling system (PCCS). The new model takes two different flow regimes into consideration, i.e. continuous water film and rivulets. For water film flow, the traditional Nusselt's was modified, to consider orientation angle and surface sheer stress. The transition from water film to rivulet as well as the structure of the stable rivulet at its onset point was modeled by using the minimum energy principle (MEP) combined with conservation equations. In addition, two different contact angles, i.e. advancing angle and retreating angle, were applied to take the hysteresis effect into consideration. The models of individual processes were validated as far as possible based on experimental data selected from open literature and from collaboration partner as well. With the models a new program module was developed and implemented into the COCOSYS program. The extended COCOSYS program was applied to analyze the containment behavior of the European generic containment and the performance of the passive containment cooling system ofthe AP1000. The results indicate clearly the importance of the new model and provide information for the optimization of the PCCS of AP1000.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Science.gov (United States)

Xiao, Xiang; Zhang, Letao; Shao, Yang; Zhou, Xiaoliang; He, Hongyu; Zhang, Shengdong

2017-12-13

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al 2 O 3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al 2 O 3 is formed using a localized anodization technique. The anodized Al 2 O 3 passivation layer shows a superior passivation effect to that of PECVD SiO 2 . The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm 2 /V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10 8 , and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Directory of Open Access Journals (Sweden)

Veer Dhaka

2016-01-01

Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

Science.gov (United States)

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

Science.gov (United States)

Shin, Kwan Yup; Tak, Young Jun; Kim, Won-Gi; Hong, Seonghwan; Kim, Hyun Jae

2017-04-19

In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μ FE ) from 11.72 ± 1.14 to 20.68 ± 1.94 cm 2 /(V s), threshold voltage (V th ) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (I on/off ) from (5.31 ± 2.19) × 10 7 to (4.79 ± 1.54) × 10 8 compared to a-IGZO TFTs without PVLs, respectively. The V th shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

Passive solar heating

Energy Technology Data Exchange (ETDEWEB)

Wiberg, K

1981-11-10

The present work treats the possibilities for heating according to the passive solar heating method. Problems of 'spatial organization in an energy-saving society' are distinguished from among other social problems. The final delimination of the actual problems under investigation consists of the use of passive solar heating and especially the 'consequences of such solar heating exploitation upon the form and structures' of planning and construction. In the concluding chapter an applied example shows how this method can be used in designing an urban area and what are its limitations. The results indicate the possibilities and difficulties in attempting to transfer this ideal and general method into models and directives for form and structure from which examples of the actual possibilities in practical planning can be given.

Liquid Film Migration in Warm Formed Aluminum Brazing Sheet

Science.gov (United States)

Benoit, M. J.; Whitney, M. A.; Wells, M. A.; Jin, H.; Winkler, S.

2017-10-01

Warm forming has previously proven to be a promising manufacturing route to improve formability of Al brazing sheets used in automotive heat exchanger production; however, the impact of warm forming on subsequent brazing has not previously been studied. In particular, the interaction between liquid clad and solid core alloys during brazing through the process of liquid film migration (LFM) requires further understanding. Al brazing sheet comprised of an AA3003 core and AA4045 clad alloy, supplied in O and H24 tempers, was stretched between 0 and 12 pct strain, at room temperature and 523K (250 °C), to simulate warm forming. Brazeability was predicted through thermal and microstructure analysis. The rate of solid-liquid interactions was quantified using thermal analysis, while microstructure analysis was used to investigate the opposing processes of LFM and core alloy recrystallization during brazing. In general, liquid clad was consumed relatively rapidly and LFM occurred in forming conditions where the core alloy did not recrystallize during brazing. The results showed that warm forming could potentially impair brazeability of O temper sheet by extending the regime over which LFM occurs during brazing. No change in microstructure or thermal data was found for H24 sheet when the forming temperature was increased, and thus warm forming was not predicted to adversely affect the brazing performance of H24 sheet.

All-fiber maskless lithographic technology to form microcircular interference pattern on Azo polymer film

Science.gov (United States)

Kim, Junki; Jung, Yongmin; Oh, Kyunghwan; Chun, Chaemin; Hong, Jeachul; Kim, Dongyu

2005-03-01

We report a novel all-fiber, maskless lithograpic technology to form various concentric grating patterns for micro zone plate on azo polymer film. The proposed technology is based on the interference pattern out of the cleaved end of a coreless silica fiber (CSF)-single mode fiber (SMF) composite. The light guided along SMF expands into the CSF segment to generate various circular interference patterns depending on the length of CSF. Interference patterns are experimentally observed when the CSF length is over a certain length and the finer spacing between the concentric rings are obtained for a longer CSF. By using beam propagation method (BPM) package, we could further investigated the concentric interference patterns in terms of intensity distribution and fringe spacing as a function of CSF length. These intereference patterns are directly projected over azo polymer film and their intensity distrubution formed surface relief grating (SRG) patterns. Compared to photoresist films azo polymer layers produce surface relief grating (SRG), where the actual mass of layer is modulated rather than refractive index. The geometric parameters of the CSF length as well as diameter and the spacing between the cleaved end of a CSF and azo polymer film, were found to play a major role to generate various concentric structures. With the demonstration of the circular SRG patterns, we confirmed that the proposed technique do have an ample potential to fabricate micro fresnel zone plate, that could find applications in lens arrays for optical beam formings as well as compact photonic devices.

Passivation Using Molecular Halides Increases Quantum Dot Solar Cell Performance.

Science.gov (United States)

Lan, Xinzheng; Voznyy, Oleksandr; Kiani, Amirreza; García de Arquer, F Pelayo; Abbas, Abdullah Saud; Kim, Gi-Hwan; Liu, Mengxia; Yang, Zhenyu; Walters, Grant; Xu, Jixian; Yuan, Mingjian; Ning, Zhijun; Fan, Fengjia; Kanjanaboos, Pongsakorn; Kramer, Illan; Zhitomirsky, David; Lee, Philip; Perelgut, Alexander; Hoogland, Sjoerd; Sargent, Edward H

2016-01-13

A solution-based passivation scheme is developed featuring the use of molecular iodine and PbS colloidal quantum dots (CQDs). The improved passivation translates into a longer carrier diffusion length in the solid film. This allows thicker solar-cell devices to be built while preserving efficient charge collection, leading to a certified power conversion efficiency of 9.9%, which is a new record in CQD solar cells. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroless plating of low-resistivity Cu–Mn alloy thin films with self-forming capacity and enhanced thermal stability

Energy Technology Data Exchange (ETDEWEB)

Chen, Sung-Te, E-mail: stchen@mail.hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Dali 412, Taichung, Taiwan (China); Chen, Giin-Shan [Department of Materials Science and Engineering, Feng Chia University, Seatwen 407, Taichung, Taiwan (China)

2015-11-05

Previous studies have typically used sputter deposition to fabricate Cu–Mn alloy thin films with concentrated solute additions which have exceeded several atomic percentages, and the electrical resistivity values of the resultant films from previous studies are relatively high, ranging from 2.5 to 3.5 μΩ-cm. Herein, we proposed a different approach by using electroless process to plate dilute Cu–Mn (0.1 at.%) alloy thin films on dielectric layers (SiO{sub 2}). Upon forming-gas annealing, the Mn incorporated into Cu–Mn films was segregated toward the SiO{sub 2} side, eventually converting itself into a few atomic layer thickness at the Cu/SiO{sub 2} interface, and forming films with a low level of resistivity the same as that of pure Cu films (2.0 μΩ-cm). The interfacial layer served as not only a diffusion barrier, but also an adhesion promoter that prevented the film’s agglomeration during annealing at elevated temperatures. The mechanism for the dual-function performance by the Mn addition was elucidated by interfacial bonding analysis, as well as dynamic (adhesive strength) and thermodynamic (surface-tension) measurements. - Highlights: • Electroless plating is proposed to grow dilute (0.1%) Cu–Mn films on SiO{sub 2} layers. • Adequate annealing results in a self-forming of MnO{sub x} at the Cu/SiO{sub 2} interface. • The role of interfacial MnO{sub x} as a barrier and adhesion promoter is demonstrated. • The treated dilute film has a low ρ level of pure Cu, in contrast to concentrated films. • Its potential as a single entity replacement of Cu interconnect is presented.

Active Mechanism of the Interphase Film-Forming Process for an Electrolyte Based on a Sulfolane Solvent and a Chelato-Borate Complexe.

Science.gov (United States)

Li, Chunlei; Wang, Peng; Li, Shiyou; Zhao, Dongni; Zhao, Qiuping; Liu, Haining; Cui, Xiao-Ling

2018-06-14

Electrolytes based on sulfolane (SL) solvents and lithium bis(oxalato)borate (LiBOB) chelato-borate complexes have been reported many times for use in advanced lithium-ion batteries due to their many advantages. This study aims to clarify the active mechanism of the interphase film-forming process to optimize the properties of these batteries by experimental analysis and theoretical calculations. The results indicate that the self-repairing film-forming process during the first cycle is divided into three stages: the initial film formation with an electric field force of ~1.80 V, the further growth of the preformation solid electrolyte interface (SEI) film at ~1.73 V, and the final formation of a complete SEI film at a potential below 0.7 V. Additionally, we can deduce that the decomposition of LiBOB and SL occurs throughout nearly the entire process of the formation of the SEI film. The decomposition product of BOB- anions tends to form films with an irregular structure, while the decomposition product of SL is in favor of the formation of a uniform SEI film.

Interior design for passive solar homes

Energy Technology Data Exchange (ETDEWEB)

Breen, J. C.

1981-07-01

The increasing emphasis on refinement of passive solar systems has brought recognition to interior design as an integral part of passive solar architecture. Interior design can be used as a finetuning tool minimizing many of the problems associated with passive solar energy use in residential buildings. In addition, treatment of interior space in solar model homes may be a prime factor in determining sales success. A new style of interior design is evolving in response to changes in building form incorporating passive solar design features. The psychology behind passive solar architecture is reflected in interiors, and selection of interior components increasingly depends on the functional suitability of various interior elements.

A Lexical Approach to Passive in ESL.

Science.gov (United States)

Marshall, Fred

Dissatisfaction with the standard transformational grammar approach to teaching passive voice sentences gave rise to the method developed. It is based on the framework of a lexical-functional grammar, which claims that both active and passive sentences are base-generated, and that both active and passive verb forms occur in the lexicon. It would…

Synthesis and luminescence properties of hybrid organic-inorganic transparent titania thin film activated by in-situ formed lanthanide complexes

International Nuclear Information System (INIS)

Wang Yige; Wang Li; Li Huanrong; Liu Peng; Qin Dashan; Liu Binyuan; Zhang Wenjun; Deng Ruiping; Zhang Hongjie

2008-01-01

Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film. TEM image shows that the in-situ formed lanthanide complexes were homogeneously distributed throughout the whole thin film. The quantum yield and the number of water coordinated to lanthanide metal center have been theoretically determined based on the luminescence data. - Graphical abstract: Novel stable luminescent organic-inorganic hybrid titania thin film with high transparency activated by in-situ formed lanthanide complexes have been obtained at room temperature via a simple one-pot synthesis approach by using TTFA-modified titanium precursor with amphiphilic triblock copolymer P123. The obtained hybrid thin film displays bright red (or green), near-monochromatic luminescence due to the in-situ formed lanthanide complex

A study of the behavior of a cathode film formed in chromium plating with radioactive tracers

International Nuclear Information System (INIS)

Yoshida, Katsuyoshi; Suzuki, Akihira; Doi, Kazuyuki; Arai, Katsutoshi

1979-01-01

The behavior and composition of a cathode film formed on a steel cathode during chromium plating were studied with radioactive tracers. A special cell with a rapid washing compartment was used for preventing the cathode film from dissolving in electrolyte after plating. The cathode film was composed of two layers. The outer layer facing to the electrolyte had a loose structure and contained more sulfuric anions than the inner layer, for sulfuric acid probably concentrated in the outer layer. This outer layer is called L-film in this paper. The L-film was easily dissolved in the electrolyte solution. The inner layer (called C-film, compact film) was stable against electrolytes and contained less anions than that of L-film. The C-film had a thickness equivalent to 5 mg/m 2 and the concentration of anions unaffected by the composition of electrolytes. The C-film was not reduced to metallic chromium, but it remained in the cathode film during and after plating. This suggests that chromic acid in the cathode film is not reduced to metallic chromium, that metallic chromium is deposited from chromium complexes reaching the cathode surface through the cathode film, and that the complexes do not play a role on the construction of the cathode film. (author)

Effects of Chlorine Ions on the Dissolution Mechanism of Cu Thin Film in Phosphoric Acid Based Solution.

Science.gov (United States)

Seo, Bo-Hyun; Kim, Byoung O; Seo, Jong Hyun

2015-10-01

The dissolution mechanisms of Cu thin film were studied with a focus on the effect of chlorine ion concentrations in mixture solutions of phosphoric and nitric acid. The dissolution behaviors of Cu thin film were investigated by using potentio-dynamic curves and impedance spectroscopy with varying chlorine ion concentrations. The copper dissolution rate decreased and as a result of this change, CuCl, salt films formed on the Cu surface in the presence of chlorine ions in the mixture solution. Such behavior was interpreted as being competitive adsorption between chlorine and nitrate ions on the copper surface. The passive oxide film on the Cu surface was further investigated in detail using X-ray photoelectron spectroscopy in both the absence and presence of differing chlorine ion concentrations.

Stepwise Swelling of a Thin Film of Lamellae-Forming Poly(styrene-b-butadiene) in Cyclohexane Vapor

DEFF Research Database (Denmark)

Di, Zhenyu; Posselt, Dorthe; Smilgies, Detlef-M.

2012-01-01

We investigated the swelling of a thin film of lamellae-forming poly(styrene-b-butadiene) in cyclohexane vapor. The vapor pressure and thus the degree of swelling of the film are increased in a stepwise manner using a custom-built sample cell. The resulting structural changes during and after each...

Passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution studied by Mott–Schottky analysis in conjunction with the point defect model

Directory of Open Access Journals (Sweden)

A. Fattah-alhosseini

2016-11-01

Full Text Available The passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution, in the steady-state condition, has been explored using electrochemical impedance spectroscopy (EIS and Mott–Schottky analysis. Based on the Mott–Schottky analysis in conjunction with the point defect model (PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. The thickness of the passive film was increased linearly with the formation potential. These observations were consistent with the predictions of the PDM, noting that the point defects within the passive film are metal interstitials, oxygen vacancies, or both.

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2015-01-01

We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition