Optical and impedance characteristics of passive films on pure aluminium

International Nuclear Information System (INIS)

Krishnakumar, R.; Szklarska-Smialowska, Z.

1992-01-01

Optical and Impedance behavior of pure bulk aluminum and pure sputtered aluminum film were studied in order to gain a better understanding of their fundamental passivation and pitting characteristics. Constant potential experiments at the passivation and pitting potentials, and potentiostatic anodic polarization were conducted while simultaneously monitoring the current, impedance and optical behavior, in-situ. Noise characteristics in the current data during the pit incubation period indicate that Cl - ions migrate with little impediment to the metal surface through defects in the passive film. Impedance experiments indicate that the polarization resistance fluctuates continuously with time during the pit incubation period, suggesting that impedance spectroscopy is sensitive to localized processes. The interfacial capacitance increases continuously during this time. The smallest pits observed on the sample surface (less than 10μ) are clearly crystallographic, indicating activation controlled dissolution at pits. The film capacitance increases with exposure time at the passivation potential, while the polarization resistance decreases continuously. The decrease in the film resistance is thought to be due to chloride incorporation at defects in the passive film. The increase in film capacitance at the passivation and pitting potential is due to an increase in the film dielectric constant caused by either a compositional change or anion incorporation. Ellipsometry results indicate growth of a dual layered film on the pure aluminum surface, with the outer layer probably containing varying amounts of incorporated chloride depending on the applied potential. Preliminary experiments indicate that in the case of sputtered aluminum film, the passive film resistance is at least an order of magnitude higher than that of bulk aluminum. This is due to the fine grain structure of sputtered Al and hence a more defect free passive film than that formed on bulk aluminum. There is

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

Energy Technology Data Exchange (ETDEWEB)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

We have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides.

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

International Nuclear Information System (INIS)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

The authors have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electrodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

Science.gov (United States)

Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

2016-04-27

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH IGZO TFTs.

Evolution of Calcareous Deposits and Passive Film on 304 Stainless Steel with Cathodic Polarization in Sea Water

Directory of Open Access Journals (Sweden)

Tianxiang Sun

2018-05-01

Full Text Available The change of protective current density, the formation and growth of calcareous deposits, and the evolution of passive film on 304 stainless steel (SS were investigated at different potentials of cathodic polarization in sea water. Potentiostatic polarization, electrochemical impedance spectroscopy (EIS, and surface analysis techniques of scanning electron microscopy (SEM, energy dispersive X-ray (EDX microanalysis and X-ray diffraction (XRD were used to characterize the surface conditions. It was found that the protective current density was smaller for keeping polarization at −0.80 V (vs. saturated calomel electrode (SCE, same as below than that at −0.65 V. The calcareous deposits could not be formed on 304 SS with polarization at −0.50 V while it was well protected. The formation rate, the morphology, and the constituent of the calcareous deposits depended on the applied potential. The resistance of passive film on 304 SS decreased at the first stage and then increased when polarized at −0.80 V and −0.65 V, which was related to the reduction and the repair of passive film. For the stainless steel polarized at −0.50 V, the film resistance increased with polarization time, indicating that the growth of oxide film was promoted.

A study of semiconducting properties of hydrogen containing passive films

International Nuclear Information System (INIS)

Zeng, Y.M.; Luo, J.L.; Norton, P.R.

2004-01-01

Mott-Schottky and photoelectrochemical measurements were used to explore the effects of hydrogen and chloride ions on the electronic properties of the passive film on X70 micro-alloyed steel in a solution of 0.5 M NaHCO 3 . Mott-Schottky analyses have shown that hydrogen increases the capacitance and donor density, and decreases the flat band potential and the space charge layer thickness of the passive film. The photocurrent of the film is remarkably increased by hydrogen. The effects of hydrogen become more pronounced with an increase in the hydrogen charging current densities. Hydrogen has no noticeable effect on the band gap energy E g and the process by which hole-electron pairs are photo-generated in the film. The presence of chloride ions in the solution produces some similar effects on the electronic properties of the passive film to those observed with hydrogen, but reduces the photocurrent and increases the band gap energy of the film. No significant synergistic effects on the electronic properties of the passive film were observed in the presence of hydrogen and Cl - . These results provide very useful information for elucidating the mechanism by which hydrogen changes the properties of passive film and then promotes localized corrosion

Effects of EDTA on the electronic properties of passive film formed on Fe-20Cr in pH 8.5 buffer solution

International Nuclear Information System (INIS)

Cho, Eun Ae; Kwon, Hyuk Sang; Beranrd, Frederic

2003-01-01

The electronic properties of the passive film formed on Fe-20Cr ferritic stainless steel in pH 8.5 buffer solution containing 0.05 M EDTA (ethylene diammine tetraacetic acid) were examined by the photocurrent measurements and Mott-Schottky analysis for the film. XPS depth profile for the film demonstrated that Cr content in the outermost layer of the passive film was higher in the solution with EDTA than that in the solution without EDTA, due to selective dissolution of Fe by EDTA. In the solution with EDTA, the passive film showed characteristics of an amorphous or highly disordered n-type semiconductor. The band gap energies of the passive film are estimated to be ∼ 3.0 eV, irrespective of film formation potential from 0 to 700 mV SCE and of presence of EDTA. However, the donor density of the passive film formed in the solution with EDTA is much higher than that formed in the solution without EDTA, due to an increase in oxygen vacancy resulted from the dissolution of Fe-oxide in the outermost layer of the passive film. These results support the proposed model that the passive film formed on Fe-20Cr in pH 8.5 buffer solution mainly consists of Cr-substituted γ-Fe 2 O 3

Semiconductor properties and protective role of passive films of iron base alloys

International Nuclear Information System (INIS)

Fujimoto, Shinji; Tsuchiya, Hiroaki

2007-01-01

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H 2 SO 4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other hand, the passive film of the Fe-18Cr alloy in the sulphuric acid consists of p-type oxide and n-type hydroxide layers. The behaviour of passive film growth and corrosion was discussed in terms of the electronic structure in the passive film

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

Science.gov (United States)

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

Modification and application of water film model in COCOSYS for PWR's passive containment cooling

International Nuclear Information System (INIS)

Huang, Xi; Cheng, Xu

2014-01-01

Highlights: • Water film model in COCOSYS has been modified by considering film breakup. • Shear stress on film surface created by countercurrent flow has been considered. • Formation and development of rivulets have been taken into account. • Modified model has been applied for passive containment cooling system. • The modified water film model has optimized the simulation results. - Abstract: In this paper the physical model describing water film behaviors in German containment code system COCOSYS has been modified by taking into consideration the film breakup and subsequent phenomena as well as the effect of film interfacial shear stress created by countercurrent air flow. The modified model has extended its capability to predict particular water film behaviors including breakup at a critical film thickness based on minimum total energy criterion, the formation of rivulets according to total energy equilibrium as well as subsequent performance of rivulets according to several assumptions and observations from experiments. Furthermore, the modification considers also the change of velocity distribution on the cross section of film/rivulets due to shear stress. Based on the geometry of AP1000 and Generic Containment, simulations predicting containment pressure variation during accidents with operation of passive containment cooling system have been carried out. With the new model, considerably larger peak pressures are observed by comparing with those predicted with original water film model within a certain range of water film flow rate. Sensitivity analyses also point out that contact angle between water rivulets and steel substrate plays a significant role in the film cooling

Photoelectrochemical studies on passive films of stainless steels

International Nuclear Information System (INIS)

Schmuki, P.; Boehni, H.

1992-01-01

Passive films on stainless steels, which are known to exhibit a significantly different susceptibility to pitting corrosion (DIN 1.4301, 1.4439, 1.4529), were in-situ examined by photoelectrochemistry. The results show that the photoresponse is determined by the defects in the electronic structure of the films leading to localized states in the band-gap region. It was found that the three different steels exhibit a different tailing of the density of states function into the band-gap region. The less deep localized states are present, the higher is the resistance of the material against pitting corrosion. It is therefore concluded that a correlation between the distribution of localized states in the passive film - i.e. its defect structure - and the stability of the film exists

Silicon surface passivation using thin HfO2 films by atomic layer deposition

International Nuclear Information System (INIS)

Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

2015-01-01

Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

X-ray photoelectron spectroscopy study of the passive films formed on thermally sprayed and wrought Inconel 625

Energy Technology Data Exchange (ETDEWEB)

Bakare, M.S. [Materials, Mechanics and Structures Research Division, Faculty of Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom); Voisey, K.T., E-mail: Katy.voisey@nottingham.ac.uk [Materials, Mechanics and Structures Research Division, Faculty of Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom); Roe, M.J.; McCartney, D.G. [Materials, Mechanics and Structures Research Division, Faculty of Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom)

2010-11-15

There is a well known performance gap in corrosion resistance between thermally sprayed corrosion resistant coatings and the equivalent bulk materials. Interconnected porosity has an important and well known effect, however there are additional relevant microstructural effects. Previous work has shown that a compositional difference exists between the regions of resolidified and non-melted material that exist in the as-sprayed coatings. The resolidified regions are depleted in oxide forming elements due to formation of oxides during coating deposition. Formation of galvanic cells between these different regions is believed to decrease the corrosion resistance of the coating. In order to increase understanding of the details of this effect, this work uses X-ray photoelectron spectroscopy (XPS) to study the passive films formed on thermally sprayed coatings (HVOF) and bulk Inconel 625, a commercially available corrosion resistant Ni-Cr-Mo-Nb alloy. Passive films produced by potentiodynamic scanning to 400 mV in 0.5 M sulphuric acid were compared with air-formed films. The poorer corrosion performance of the thermally sprayed coatings was attributed to Ni(OH){sub 2}, which forms a loose, non-adherent and therefore non-protective film. The good corrosion resistance of wrought Inconel 625 is due to formation of Cr, Mo and Nb oxides.

HTS thin films: Passive microwave components and systems integration issues

International Nuclear Information System (INIS)

Miranda, F.A.; Chorey, C.M.; Bhasin, K.B.

1994-01-01

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory's High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects

Optimized thin film coatings for passive radiative cooling applications

Science.gov (United States)

Naghshine, Babak B.; Saboonchi, Ahmad

2018-03-01

Passive radiative cooling is a very interesting method, which lays on low atmospheric downward radiation within 8-13 μm waveband at dry climates. Various thin film multilayer structures have been investigated in numerous experimental studies, in order to find better coatings to exploit the full potential of this method. However, theoretical works are handful and limited. In this paper, the Simulated Annealing and Genetic Algorithm are used to optimize a thin film multilayer structure for passive radiative cooling applications. Spectral radiative properties are calculated through the matrix formulation. Considering a wide range of materials, 30 high-potential convective shields are suggested. According to the calculations, cooling can be possible even under direct sunlight, using the introduced shields. Moreover, a few water-soluble materials are studied for the first time and the results show that, a KBr substrate coated by a thin CaF2 or polyethylene film can is very close to an ideal coating for passive radiative cooling at night.

Effect of Molecular Structure on Modulation of Passivation Films on Copper Chemical Mechanical Planarization

Science.gov (United States)

Mlynarski, Amy

In order to optimize the chemical mechanical planarization (CMP) process, there is a need to further understand the synergistic relationship between chemical and mechanical parameters to enhance the polishing process. CMP chemistry is very complex, as it contains complexing agents, oxidizing agents, passivating agents, and abrasive particles. This variety of components ensues chaos within the system, which complicates the understanding of the direct impact each component has on the CMP process. In order for there to be efficiency in the polishing process, specifically for copper (Cu) polishing, the chemistry must create a softened passivation layer on the Cu surface that is able to be readily removed by applied mechanical abrasion. Focusing on Cu CMP, the oxidation of Cu to Cu2+ needs to be thoroughly understood in order to probe the formation of creating this ideal passivated layer, which protects recessed Cu regions. The type of film that is formed, the strength of the film, and even the efficiency of film removal will be altered depending on the chemistry of interaction at the Cu surface. This thesis focuses on understanding the working mechanism of the film formation on Cu, depending on the passivating agent added to the system. The different passivating agents used, more specifically benzotriazole (BTA), triazole (TAZ), salicylhydroxamic acid (SHA), and benzimidazole (BIA), have all been known to create a light coat of protection on the recessed metal, providing corrosion resistance. In order to study the differences in these films, many different techniques can be utilized to characterize the films, such as electrochemical scans, referred to as Tafel plots, which will be performed to compare the differences of the films. By altering the temperature within the system, the activation energy for each system can also be determined as another way to characterize the density of the passive film formed. Furthermore, the generation of *OH will be monitored since the

The non-linear fitting method to analyze the measured M-S plots of bipolar passive films

International Nuclear Information System (INIS)

Jiang Ruijing; Chen Changfeng; Zheng Shuqi

2010-01-01

Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the C sc -2 vs. V m plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the C sc -2 vs. V m plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of Nickel base alloy after being corroded in the environments with high temperatures and high partial pressures of H 2 S/CO 2 . The fitting results indicate that the non-linear fitting of M-S plots can well help to understand the anti-corrosion mechanism of bipolar passive films.

Stability and modification of passive films of new PUREX-materials

International Nuclear Information System (INIS)

Schultze, J.W.; Siemensmeyer, B.; Patzelt, T.

1991-10-01

The valve metals Ti, Zr and others and their alloys can be used in nitric acid solutions of the Purex process. They are protected by passive films which are stable at least at low temperatures and concentrations. Electrochemical investigations and corrosion tests are applied to check improvements of the materials. Niobium can be used to substitute the very expensive tantalum. Electrochemical and analytical investigations show the formation of the corrosion stable oxide film. Special problems are treated, such as the stability of welded joints or the influence of radioactive irradiation. α-radiation and hot atoms are simulated by ion implantation, β- and γ-radiation are simulated by laser light. In both types of experiments no decrease of stability is indicated. The alloy Ti5Ta is more stable than Ti, but it is not as good as Ta. Other alloys of Ti were investigated, but they are not suitable for the Purex process. New protection layers are tested. With respect to their preparation as well as their corrosion stability, ANOF-films are promising, but TiN-films are not stable enough. (orig.) With 71 refs., 7 tabs., 71 figs [de

HTS thin films: Passive microwave components and systems integration issues

Energy Technology Data Exchange (ETDEWEB)

Miranda, F.A.; Chorey, C.M.; Bhasin, K.B. [National Aeronautics and Space Administration, Cleveland, OH (United States)

1994-12-31

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory`s High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects.

Growth Process of Passive Films Formed on Austenitic Stainless Steels under Atmospheric Environments

Energy Technology Data Exchange (ETDEWEB)

Jung, Rock-Hoon [Samsung Heavy Industries Co.,Ltd, Seoul (Korea, Republic of); Fujimoto, Shinji [Osaka University, Osaka (Japan)

2014-06-15

The excellent protection ability of stainless steel derives from the highly Cr enriched passive film which is formed as a result of selective dissolution of Fe into the bulk solution. On the other hand, the passive films formed under atmospheric conditions do not necessarily exhibit Cr enrichment, because the amount of the solution on a stainless steel as an adsorbed thin water layer is not sufficient for selective dissolution of Fe. Therefore, the modification of passive films may occur as tiny mass transfer between hydroxide layer and oxide layer of the passive films, and/or occasional replace of the adsorbed thin water layer. In the present work, in order to discuss atmospheric corrosion, passive films on stainless steels formed under humid atmospheric environments were characterized using X-ray photoelectron spectroscopy. Optimal conditions for the pulse anodizing were a duty ratio of 91%, a frequency of 0.09 Hz, and an anodizing time of 600 s. Pulse anodizing caused a remarkable decrease in the surface porosity (11-fold) and an increase in the film thickness (1.6-fold) from those obtained under a constant potential of 10 V{sub Ag/AgCl}. Furthermore, an Al-enriched oxide layer was formed on the outer surface of MgO.

Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

2017-01-30

Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

Thick-Film and LTCC Passive Components for High-Temperature Electronics

Directory of Open Access Journals (Sweden)

A. Dziedzic

2013-04-01

Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

Formation, surface characterization, and electrocatalytic application of self-assembled monolayer films of tetra-substituted manganese, iron, and cobalt benzylthio phthalocyanine complexes

CSIR Research Space (South Africa)

Akinbulu, IA

2011-10-01

Full Text Available characteristics of the films were interrogated by cyclic voltammetry. Significant passivation of voltammetry processes associated with bare gold surface (gold oxidation and underpotential deposition of copper) confirmed formation of the films. Electrocatalytic...

Influence of film dimensions on film droplet formation.

Science.gov (United States)

Holmgren, Helene; Ljungström, Evert

2012-02-01

Aerosol particles may be generated from rupturing liquid films through a droplet formation mechanism. The present work was undertaken with the aim to throw some light on the influence of film dimensions on droplet formation with possible consequences for exhaled breath aerosol formation. The film droplet formation process was mimicked by using a purpose-built device, where fluid films were spanned across holes of known diameters. As the films burst, droplets were formed and the number and size distributions of the resulting droplets were determined. No general relation could be found between hole diameter and the number of droplets generated per unit surface area of fluid film. Averaged over all film sizes, a higher surface tension yielded higher concentrations of droplets. Surface tension did not influence the resulting droplet diameter, but it was found that smaller films generated smaller droplets. This study shows that small fluid films generate droplets as efficiently as large films, and that droplets may well be generated from films with diameters below 1 mm. This has implications for the formation of film droplets from reopening of closed airways because human terminal bronchioles are of similar dimensions. Thus, the results provide support for the earlier proposed mechanism where reopening of closed airways is one origin of exhaled particles.

The behavior of dissolution/passivation and the transformation of passive films during electrocoagulation: Influences of initial pH, Cr(VI) concentration, and alternating pulsed current

International Nuclear Information System (INIS)

Yang, Zhao-hui; Xu, Hai-yin; Zeng, Guang-ming; Luo, Yuan-ling; Yang, Xia; Huang, Jing; Wang, Li-ke; Song, Pei-pei

2015-01-01

Highlights: • Initial pH, Cr(VI) and APC could affect the behavior of dissolution/passivation in Fe-EC. • A dissolution/passivation region was constructed with different initial pH-Cr(VI). • The film was rich in Fe and Cr at high Cr(VI), whereas with lots of Fe but negligible of Cr at low Cr(VI). • The film was non-protective at long T APC , but became more stable and protective at short T APC . • Behavior of dissolution/passivation and passive film transformation in Fe-EC was elucidated. - Abstract: The passivation behavior of an iron anode for electrocoagulation (EC) was first investigated using response surface methodology (RSM). Tested initial pH range, Cr(VI) concentration and alternating pulsed current (APC) were 4.0 to 8.0, 52 to 520 mg L −1 and 10 to 590 s, respectively. The distance between electrodes was 25 mm, and K 2 SO 4 (1 g L −1 ) was used as the supporting electrolyte in a 2.5 L EC reactor. Results confirmed that initial pH, Cr(VI) concentration, and APC significantly influence the extent of passivation. Then, based on the interaction effect on passivation behavior between initial pH and Cr(VI) in RSM, a pH-Cr(VI)-dissolution/passivation diagram was constructed with galvanostatic measurements. The diagram showed an optimal dissolution region for EC operation. This optimum was characterized by a reasonable final pH for extended precipitation and little passivation. Results of the cyclic voltammetry and X-ray photoelectron spectroscopy revealed a significant difference in the composition and stability of oxide films in the region with more pronounced passivation. Interestingly, the APC had both positive and negative effect on the passivation behavior. Long period of APC (T APC = 590 s) produced a non-protective film, which favored the Fe 0 dissolution. However, a more stable and protective passive film with a uniform structure of Fe and Cr oxides was formed by short T APC (10 s). Based on the above results, this study elucidated the

Passivation Of High-Temperature Superconductors

Science.gov (United States)

Vasquez, Richard P.

1991-01-01

Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

Electrochemical and in-situ Surface-Enhanced Raman Spectroscopic (SERS) study of passive films formed on low-carbon steel in highly alkaline environments

Science.gov (United States)

Mancio, Mauricio

In reinforced concrete, a passive layer forms because of the alkaline conditions in the pores of the cement paste, where large concentrations of hydroxides create a solution with pH typically between 12 and 14. The corrosion resistance of the material depends on the characteristics and integrity of the passive film; however, currently very limited information is available about the passive films formed on carbon steel under such conditions. This work presents an electrochemical and in-situ Surface-Enhanced Raman Spectroscopic (SERS) study of passive films formed on low-carbon steel in highly alkaline environments. More specifically, the study focuses on the characterization of the films formed on ASTM A36 steel reinforcing bar exposed to aqueous solutions that aim to reproduce the chemistry of the environment typically found within the cement paste. Electrochemical techniques such as cyclic potentiodynamic polarization curves, galvanostatic cathodic polarization and linear polarization resistance were employed, in addition to in-situ Surface Enhanced Raman Spectroscopy (SERS). The experimental setup was built in a way that SERS experiments could be performed simultaneously with potentiodynamic polarization curves, enabling a detailed analysis of the formation and reduction of the surface films as a function of applied potential. Three solutions with different pH levels were used for the polarization and SERS experiments, namely 0.55M KOH + 0.16M NaOH ([OH-]=0.71), 0.08M KOH + 0.02M NaOH ([OH-]=0.10) and 0.008M KOH + 0.002M NaOH ([OH-]=0.01). Additional NaOH solutions in which the pH was varied from 13 to 9 and the ionic strength from 10 -5 to 10-1 were prepared for a pilot study using linear polarization resistance. Results show that the features observed in the cyclic potentiodynamic polarization curves correlated well with the potential arrests observed in the GCP plots as well as with the changes observed in the SERS spectra, providing valuable information about

A review of ionic liquid surface film formation on Mg and its alloys for improved corrosion performance

International Nuclear Information System (INIS)

Huang, Peipei; Latham, Julie-Anne; MacFarlane, Douglas R.; Howlett, Patrick C.; Forsyth, Maria

2013-01-01

Magnesium and its alloys are prone to corrosion upon exposure to atmosphere thus are usually protected by using a pretreatment before being employed. The use of ionic liquids (ILs) has emerged as a novel chemical in corrosion protection of reactive metals such as lithium and magnesium. This paper reviews the use of ILs in the corrosion protection of magnesium and aluminium with respect to a range of IL chemistries. Emphasis has also been placed on characterisation of the passivating films using various techniques, as well as proposed mechanisms for film formation. This review highlights that there is still much research needed to understand how to generate robust passivating films on reactive metal surfaces in the presence of ILs

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

Science.gov (United States)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Investigations on the passivity of iron in borate and phosphate buffers, pH 8.4

International Nuclear Information System (INIS)

Sieber, I.V.; Hildebrand, H.; Virtanen, S.; Schmuki, P.

2006-01-01

In the present work surface analytical experiments (XPS and AES) on the passive film on iron formed in borate and phosphate buffers (pH 8.4) have been carried out. In the passive film formed in phosphate buffer a significant amount of phosphates is found in the outer part of the film. Boron species are not significantly incorporated in the passive film formed in borate buffer. The mechanism of the reduction of the passive film depends strongly on the electrolyte composition. In borate buffer, cathodic polarization leads to reductive dissolution of the passive film whereas in phosphate buffer the passive film is converted into metallic iron without dissolution but via laterally inhomogeneously formation of an intermediate Fe(II) phosphate layer

Carbon steel protection in G.S. (Girlder sulfide) plants. Iron sulfide scales formation on surfaces covered by fabrication produced films. Pt. 4

International Nuclear Information System (INIS)

Burkart, A.L.

1986-04-01

This work describes the assays aimed to passivate the steel carbon of the process pipings. This steel is marked by the ASTM A 333 G6 and is chemically similar to those of isotopic exchange towers which corrode in contact with in-water hydrogen sulfide solutions forming iron sulfide protective layers. The differences between both materials lie in the surface characteristics to be passivated. The steel of towers has an internal side covered by paint which shall be removed prior to passivation. The steel's internal side shall be covered by a film formed during the fabrication process and constituted by calcinated wastes and iron oxides (magnetite, hematite and wustite). This film interferes in the formation process of passivating layers of pyrrhotite and pyrite. The possibility to passivate the pipes in their actual state was evaluated since it would result highly laborious and expensive to eliminate the film. (Author) [es

Effect of oxide film formation on the fatigue behavior of aluminum alloy

International Nuclear Information System (INIS)

Kim, Jong Cheon; Cheong, Seong Kyun

2012-01-01

In this study, the effects of surface oxide film formation on the fatigue behavior of 7075-T6 aluminum alloy were analyzed in terms of the corrosion time of the alloy. The aluminum material used is known to have high corrosion resistance due to the passivation phenomenon that prevents corrosion. Aluminum alloys have been widely used in various industrial applications such as aircraft component manufacturing because of their lighter weight and higher strength than other materials. Therefore, studies on the fatigue behavior of materials and passivation properties that prevent corrosion are required. The fatigue behavior in terms of the corrosion time was analyzed by using a four pointing bending machine, and the surface corrosion level of the aluminum material in terms of the corrosion time was estimated by measuring the surface were studied by scanning electron microscopy (SEM). The results indicated that corrosion actively progressed for four weeks during the initial corrosion phase, the fatigue life significantly decreased, and the surface roughness increased. However, after four weeks, the corrosion reaction tended to slow down due to the passivation phenomenon of the material. Therefore, on the basis of SEM analysis results, it was concluded that the growth of the surface oxide film was reduced after four weeks and then the oxide film on the material surface served as a protection layer and prevented further corrosion

The passive oxide films growth on 316L stainless steel in borate buffer solution measured by real-time spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Xu, Haisong; Wang, Lu; Sun, Dongbai [National Center for Materials Service Safety (NCMS), University of Science and Technology Beijing, Beijing 100083 (China); Yu, Hongying, E-mail: hyyu@ustb.edu.cn [Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China)

2015-10-01

Highlights: • The optical properties of passive oxide films on 316L stainless steel were studied. • The thickness of the oxide films (1.5–2.6 nm) increased linearly with the potentials. • The growth of passive film followed high electric field ion conduction model. • Selective solubility of oxide induced compositional change of passive film. - Abstract: Passive film growth on 316L stainless steel was investigated in borate buffer electrolyte (pH = 9.1) by real-time spectroscopic ellipsometry (SE) and the composition was estimated by X-ray photoelectron spectroscopy (XPS). Anodic passivation of 316L SS was carried out in the potential range from 0 V{sub SCE} to 0.9 V{sub SCE}, after potentiostatic polarization for 1800s, the current density decayed from 10{sup −2} A cm{sup −2} to 10{sup −6} A cm{sup −2}. The passive film thickness was simulated from Frenel and Drude reflection equations, the average complex refractive index was assumed to be N = 2.3 − j0.445. The estimated thickness increased linearly with potential from 1.5 nm at 0 V to 2.6 nm at 0.8 V. The growth of passive film followed high electric field ion conduction model. The passive film mainly contained the oxide/hydroxide of iron and chromium. The selective solubility of oxide in passive film explained the change of iron and chromium content at different potentials. Few nickel and molybdenum also contributed to the passive film with a constant content.

Electrochemical dissolution of fresh and passivated chalcopyrite electrodes. Effect of pyrite on the reduction of Fe3+ ions and transport processes within the passive film

International Nuclear Information System (INIS)

Olvera, O.G.; Quiroz, L.; Dixon, D.G.; Asselin, E.

2014-01-01

Graphical abstract: - Highlights: • FeS 2 increased the dissolution rate of fresh and passivated CuFeS 2 electrodes. • Fe 3+ reduction was the rate controlling step in the dissolution of fresh CuFeS 2 . • Diffusion within the passive film controlled the dissolution rate of passivated CuFeS 2 . - Abstract: The effect of pyrite (FeS 2 ) on the electrochemical dissolution of fresh and passivated chalcopyrite (CuFeS 2 ) electrodes has been studied. Current density values for the dissolution of CuFeS 2 were calculated from EIS measurements. FeS 2 increased the dissolution rate of fresh and passivated CuFeS 2 electrodes indicating that the galvanic effect continued even after the electrode was chemically passivated. The dissolution rate of CuFeS 2 decreased by a factor of 3 after the passivation treatment. Due to the low diffusion rates of ions within the CuFeS 2 passive film and due to an increase in the resistance to the transfer of electrons at the electrode/film interface, the activity of FeS 2 for the reduction of Fe 3+ ions was also reduced by a factor of 2.3 even though FeS 2 was not exposed to any chemical treatment. The results in this work indicate that the dissolution rate of the fresh CuFeS 2 electrode was controlled by the reduction of Fe 3+ ions whereas for the passivated CuFeS 2 electrode the dissolution rate was controlled by diffusion within the passive film

Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

Directory of Open Access Journals (Sweden)

Ching-Tao Li

2014-01-01

Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

Structure and photoluminescence of Mn-passivated nanocrystalline ZnO:S thin films

International Nuclear Information System (INIS)

Tong, Y.H.; Tang, Q.X.; Liu, Y.C.; Shao, C.L.; Xu, C.S.; Liu, Y.X.

2005-01-01

Mn-passivated nanocrystalline ZnO:S thin films were fabricated by thermally oxidizing Mn-doped ZnS (ZnS:Mn) films prepared by electron beam evaporation. Mn was introduced to passivate the surface defects of ZnO and to improve the optical properties. X-ray diffraction (XRD) and photoluminescence (PL) spectra at 81.9 K indicated the S content in ZnO thin film gradually decreased with increasing annealing temperature. The fitted result of the temperature-dependent PL spectra in the range from 81.9 to 302.2 K showed that S dopant could broaden the optical band gap energy of ZnO. Room temperature PL spectra confirmed that the ultraviolet peak shifted to lower energy with the decrease of S content in the thin film because of the Burstein-Moss effect

Hydrogen passivation of polycrystalline Si thin film solar cells

International Nuclear Information System (INIS)

Gorka, Benjamin

2010-01-01

Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V OC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V brk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V brk . Plasma simulations were carried out, which indicate that best V OC corresponds to a minimum in ion energy. V OC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the V OC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V OC , which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T dep =200-700 C and were characterized by Raman, ESR and V OC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.10 16 cm -3 after passivation was

Effects of anodic passivation on the constitution, stability and resistance to corrosion of passive film formed on an Fe-24Mn-4Al-5Cr alloy

International Nuclear Information System (INIS)

Zhang, Y.S.; Zhu, X.M.; Liu, M.; Che, R.X.

2004-01-01

The effects of anodic aging time and potential on the corrosion resistance, stability and constitution of the passive film formed on an Fe-24Mn-4Al-5Cr alloy in 50% HNO 3 solution were studied by using combined electrochemical measurements and Auger electron spectroscopic (AES)/X-ray photoelectron spectroscopic (XPS) analysis. In the anodic passive region, prolonged anodic aging time or increased passivating potential can induce better protective and stable properties of the passive film and better resistance to corrosion. With increasing aging time from 15 min to 5 h, the time required for the potential decay from the passive to active state increases from about 300 up to above 12,000 s, and the corrosion resistance in 1 mol l -1 Na 2 SO 4 solution of Fe-24Mn-4Al-5Cr alloy, characterized by polarization curves, is superior to that of Fe-13% Cr-0.1% C stainless steel. AES and XPS analyses of the aging passive film show that these improvements of properties are related to modifications of the passive layer with time. The increase of resistance to corrosion is attributed to Al 2 O 3 and Cr 2 O 3 enrichment and oxides of Fe and Mn depletion in the passive film and a thickening of the effective barrier layer of oxides

The hydroxylation of passive oxide films on X-70 steel by dissolved hydrogen studied by nuclear reaction analysis, Auger electron spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectroscopy

International Nuclear Information System (INIS)

Zhang Chunsi; Luo Jingli; Munoz-Paniagua, David; Norton, Peter R.

2006-01-01

Dissolved hydrogen is known to reduce the corrosion resistance of a passive oxide film on iron and its alloys, especially towards pitting corrosion. Electrochemical techniques have been used to show that the passive films are changed by dissolved hydrogen in an alloy substrate, but direct confirmation of the chemical and compositional profiles and changes has been missing. In this paper we report the direct profiling and compositional analysis of the 4 nm passive film on X-70 steel by Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and nuclear reaction analysis (NRA) while hydrogen (deuterium) is charged into the alloy samples from the reverse, unpassivated side. The only route for D to the passive film is therefore by dissolution and diffusion. We show that the original duplex structure of the passive film is converted to a more continuous film containing hydroxyl groups, by reaction with the dissolved hydrogen. This conversion of the oxide ions to hydroxyl groups can lead to more rapid reaction and replacement with (e.g.) Cl - , which is known to enhance pitting. These results are entirely consistent with previous electrochemical studies and provide the first direct confirmation of models on the formation and role of hydroxyl groups derived from these earlier studies

Investigation of passivating films on Li-electrode by the method of photoelectronic emission

International Nuclear Information System (INIS)

Nimon, E.S.; Churikov, A.V.; Gamayunova, I.M.; L'vov, A.L.

1995-01-01

Spectral dependences of photoeffect under conditions of pulsed illumination by visible and near IR radiation of Li-electrode surface in propylene carbonate and thionyl chloride base solutions have been studied. Photoemission of electrons from lithium to passivating films on its surface is the primary stage of the cathode photoeffect detected. The method of electron photoemission is used to obtain information on the composition and characteristics of the passivating films. 21 refs., 7 figs., 1 tab

Ultrathin protective films of two-dimensional polymers on passivated iron against corrosion in 0.1M NaCl

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2005-01-01

Prevention of iron corrosion in an aerated 0.1M NaCl solution was investigated by polarization and mass-loss measurements of a passivated iron electrode covered with ultrathin and ordered films of two-dimensional polymers. The films were prepared on the passivated electrode by modification of a 16-hydroxyhexadecanoate ion HO(CH 2 ) 15 CO 2 - self-assembled monolayer with 1,2-bis(triethoxysilyl)ethane (C 2 H 5 O) 3 Si(CH 2 ) 2 Si(OC 2 H 5 ) 3 and alkyltriethoxysilane C n H 2n+1 Si(OC 2 H 5 ) 3 (n=8 or 18). Because crevice corrosion occurred at the initial stage of immersion in the solution preferentially, the edge of electrode covered with the polymer film was coated with epoxy resin. The open-circuit potentials of the covered electrodes in the solution were maintained high, more than -0.2V/SCE for several hours, indicating that no breakdown of the passive film occurred on the surface. The protective efficiencies of the films were extremely high, more than 99.9% unless the passive film was broken down. The efficiencies after immersion for 24h almost agreed with those obtained by mass-loss measurements. X-ray photoelectron spectroscopy and electron-probe microanalysis of the passivated surface covered with the polymer film after immersion in the solution for 4h revealed that pit initiation on the passive film was suppressed by coverage with the polymer film completely

Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

International Nuclear Information System (INIS)

Hai-Qing, Xiao; Chun-Lan, Zhou; Xiao-Ning, Cao; Wen-Jing, Wang; Lei, Zhao; Hai-Ling, Li; Hong-Wei, Diao

2009-01-01

Al 2 O 3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 10 12 cm −2 is detected in the Al 2 O 3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO 2 and plasma enhanced chemical vapor deposition SiN x :H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al 2 O 3 . (cross-disciplinary physics and related areas of science and technology)

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

International Nuclear Information System (INIS)

Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

2013-01-01

Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Hydrogen passivation of polycrystalline Si thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Gorka, Benjamin

2010-12-15

Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

In situ EC-AFM study of the effect of nanocrystals on the passivation and pit initiation in an Al-based metallic glass

International Nuclear Information System (INIS)

Zhang, S.D.; Liu, Z.W.; Wang, Z.M.; Wang, J.Q.

2014-01-01

Highlights: • The nanoscale corrosion on Al-rich glass was characterised by in situ EC-AFM. • The nanocrystals were identified from amorphous matrix by tapping mode AFM. • The formation of corrosion products is associated with the galvanic coupling. • The nanocrystals changed the local structure and component of the passive film. - Abstract: The effect of nanocrystals on pit initiation in metallic glasses is an unresolved issue. The passive film formation and pit initiation in the Al–Ni–Ce metallic glass were investigated using in situ electrochemical atomic force microscope (EC-AFM). The α-Al nanophases were identified from the amorphous matrix based upon the phase imaging in the tapping mode AFM. In the early stage of the passive film formation, the corrosion products Al(OH) 3 formed on the α-Al nanoparticles due to the galvanic coupling. The corrosion products incorporated into the passive film changed the local structure and component of the passive film, lowering its stability

Study of passive films formed on mild steel in alkaline media by the application of anodic potentials

Energy Technology Data Exchange (ETDEWEB)

Freire, L. [Universidade de Vigo, E.T.S.E.I., Campus Universitario, 36310 Vigo (Spain)], E-mail: lorenafp@uvigo.es; Novoa, X.R. [Universidade de Vigo, E.T.S.E.I., Campus Universitario, 36310 Vigo (Spain); Montemor, M.F. [ICEMS - Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049 - 001 Lisboa (Portugal); Carmezim, M.J. [ICEMS - Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049 - 001 Lisboa (Portugal); EST Setubal, DEM, Instituto Politecnico de Setubal, Campus IPS, 2910 Setubal (Portugal)

2009-04-15

In this paper, iron oxide thin layers formed on mild steel substrates in alkaline media by the application of different anodic potentials were studied in order to characterize their morphology, composition and electrochemical behaviour, in particular under conditions of cathodic protection. The surface composition was evaluated by X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The morphology of the surface oxides was studied via Atomic Force Microscopy (AFM). The electrochemical behaviour of the surface oxides was studied using Electrochemical Impedance Spectroscopy (EIS). The results showed that the surface film is composed by Fe{sup 2+}oxides and Fe{sup 3+} oxides and/or hydroxides. The contribution of Fe{sup 2+} species vanishes when the potential of film formation increases in the passive domain. Two distinct phases were differentiated in the outer layers of the surface film, which proves that film growing is topotactic in nature.

Study of passive films formed on mild steel in alkaline media by the application of anodic potentials

International Nuclear Information System (INIS)

Freire, L.; Novoa, X.R.; Montemor, M.F.; Carmezim, M.J.

2009-01-01

In this paper, iron oxide thin layers formed on mild steel substrates in alkaline media by the application of different anodic potentials were studied in order to characterize their morphology, composition and electrochemical behaviour, in particular under conditions of cathodic protection. The surface composition was evaluated by X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The morphology of the surface oxides was studied via Atomic Force Microscopy (AFM). The electrochemical behaviour of the surface oxides was studied using Electrochemical Impedance Spectroscopy (EIS). The results showed that the surface film is composed by Fe 2+ oxides and Fe 3+ oxides and/or hydroxides. The contribution of Fe 2+ species vanishes when the potential of film formation increases in the passive domain. Two distinct phases were differentiated in the outer layers of the surface film, which proves that film growing is topotactic in nature

The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study.

Science.gov (United States)

Jiang, Jin-Yang; Wang, Danqian; Chu, Hong-Yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

2017-04-14

An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed.

Potential dependence of surface crystal structure of iron passive films in borate buffer solution

International Nuclear Information System (INIS)

Deng, Huihua; Nanjo, Hiroshi; Qian, Pu; Santosa, Arifin; Ishikawa, Ikuo; Kurata, Yoshiaki

2007-01-01

The effect of passivation potential on surface crystal structure, apparent thickness and passivity of oxide films formed on pure iron prepared by plasma sputter deposition was investigated. The crystallinity was improved with passivation potential and the width of atomically flat terraces was expanded to 6 nm when passivating at 750 mV for 15 min, as observed by ex situ scanning tunneling microscopy (STM) after aging in air (<30% RH). Apparent thickness and passivity are linearly dependent on passivation potential. The former weakly depends on passivation duration, the latter strongly depends on passivation duration. This is well explained by the correlation between crystal structure and passivity

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Spontaneous passivation observations during scale formation on mild steel in CO{sub 2} brines

Energy Technology Data Exchange (ETDEWEB)

Han Jiabin, E-mail: jhan@lanl.gov [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Nesic, Srdjan, E-mail: nesic@ohio.edu [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Yang Yang; Brown, Bruce N. [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States)

2011-06-01

Highlights: > We observed spontaneous passivation was at pH > 7. A higher open circuit potential was achieved comparing to bare surface or FeCO{sub 3} scaled surface. > Effects of pH, temperature, CO{sub 2}/FeCO{sub 3} on spontaneous passivation were systematically investigated. > TEM analysis determined the structure and chemistry of the passive film is Fe{sub 3}O{sub 4} instead of FeCO{sub 3}. > Root cause of the galvanic mechanism of localized CO{sub 2} corrosion is clarified. - Abstract: Previous study revealed localized corrosion in CO{sub 2} environments was driven by a galvanic cell established between pit surfaces and scaled surrounding area. In order to underpin the understanding of the galvanic mechanism of localized corrosion, the root cause of potential differences between these two surfaces, passivation of mild steel, in CO{sub 2} environments was investigated using transmission electron microscopy technique and electrochemical techniques including potentiodynamic polarization, cyclic polarization and open circuit potential techniques. Potentiodynamic polarization experiments showed that the passivation of the carbon steel surface favorably occurred at pH > 7 and facilitated with the presence of FeCO{sub 3} scale. Cyclic polarization tests showed that polarization rate had an important influence on passivation behavior. At a slower polarization rate, lower passivation potential and current density were observed. Spontaneous passivation was evidenced by a significant increase of corrosion resistance and an open circuit potential without any externally applied current or potential during electrode immersion. This process is affected by pH, temperature, presence of CO{sub 2} and iron carbonate. Nevertheless, iron carbonate film is not the only one responsible for passivation, as demonstrated from depassivation tests where passivity was lost without losing the existing iron carbonate film. Transmission electron microscopy technique was used to determine

Phosphazene like film formation on InP in liquid ammonia (223 K)

Energy Technology Data Exchange (ETDEWEB)

Gonçalves, A.-M., E-mail: goncalves@chimie.uvsq.fr; Njel, C.; Mathieu, C.; Aureau, D.; Etcheberry, A.

2013-07-01

An anodic photo-galvanostatic treatment at low current density (1 μA·cm{sup −2}) is carried out on n-InP semiconductor in liquid ammonia (223 K). The gradual chemical evolution of the surface is studied as a function of the anodic charge. Proof and reproducibility of the chemical transformation of the surface are clearly evidenced by X-ray photoelectron spectroscopy (XPS) analyses. Like by cyclic voltammetry, the perfect coverage of the InP surface by a thin phosphazene like film is also revealed by XPS data. However, a low anodic charge (≈ 0.5 mC·cm{sup −2}) is required by photo-galvanostatic treatment while a higher anodic charge (≈ 7 mC·cm{sup −2}) is involved by cyclic voltammetry. The excess of charge could be related to ammonia oxidation during the formation of the passivating film. This result proves the electrochemical oxidation of the solvent as a determinant step of the mechanism film formation. - Highlights: ► Cyclic voltammetry and galvanostatic modes on n-InP in liquid ammonia (223 K). ► A thin film growth is reached by photo-anodic polarization. ► The same phosphazene like film is evidenced by X-ray photoelectron spectroscopy. ► An excess of charge is observed by cyclic voltammetry. ► An electrochemical oxidation step of the solvent is assumed.

Complete protection of a passive film on iron from breakdown in a borate buffer containing 0.1M of Cl- by coverage with an ultrathin film of two-dimensional polymer

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2006-01-01

An ultrathin film of two-dimensional polymer was prepared on a passivated iron electrode by modification of a 16-hydroxyhexadecanoate ion HO(CH 2 ) 15 CO 2 - self-assembled monolayer with 1,2-bis(triethoxysilyl)ethane (C 2 H 5 O) 3 Si(CH 2 ) 2 Si(OC 2 H 5 ) 3 and octadecyltriethoxysilane C 18 H 37 Si(OC 2 H 5 ) 3 . This film prevented passive film breakdown examined by potentiodynamic anodic polarization of the coated electrode in the borate buffer solution containing 0.1M of Cl - . Neither current spikes nor the pitting potential was observed in the passive and transpassive regions of polarization curve. The anodic current density was decreased in these regions markedly, implying hindrance to permeation of Cl - and water through the film. Structure of the film was clarified by X-ray photoelectron and FTIR reflection spectroscopies and contact angle measurement with a drop of water. Electron-probe microanalysis of the passivated surface coated with the film after anodic polarization scanning up to the transpassive region revealed that the polymer film prevents pit initiation by an attack on the passive film with Cl -

The corrosion and passivity of sputtered Mg–Ti alloys

International Nuclear Information System (INIS)

Song, Guang-Ling; Unocic, Kinga A.; Meyer, Harry; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

2016-01-01

Highlights: • A supersaturated single phase Mg–Ti alloy can be obtained by magnetron sputtering. • The anodic dissolution of Mg–Ti alloy is inhibited by Ti addition. • The alloy becomes passive when Ti content is high and the alloy has become Ti based. • The formation of a continuous thin passive film is responsible for the passivation of the alloy. - Abstract: This study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. The surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

Orogenic structural inheritance and rifted passive margin formation

Science.gov (United States)

Salazar Mora, Claudio A.; Huismans, Ritske S.

2016-04-01

Structural inheritance is related to mechanical weaknesses in the lithosphere due to previous tectonic events, e.g. rifting, subduction and collision. The North and South Atlantic rifted passive margins that formed during the breakup of Western Gondwana, are parallel to the older Caledonide and the Brasiliano-Pan-African orogenic belts. In the South Atlantic, 'old' mantle lithospheric fabric resulting from crystallographic preferred orientation of olivine is suggested to play a role during rifted margin formation (Tommasi and Vauchez, 2001). Magnetometric and gravimetric mapping of onshore structures in the Camamu and Almada basins suggest that extensional faults are controlled by two different directions of inherited older Brasiliano structures in the upper lithosphere (Ferreira et al., 2009). In the South Atlantic Campos Basin, 3D seismic data indicate that inherited basement structures provide a first order control on basin structure (Fetter, 2009). Here we investigate the role of structural inheritance on the formation of rifted passive margins with high-resolution 2D thermo-mechanical numerical experiments. The numerical domain is 1200 km long and 600 km deep and represents the lithosphere and the sublithospheric mantle. Model experiments were carried out by creating self-consistent orogenic inheritance where a first phase of orogen formation is followed by extension. We focus in particular on the role of varying amount of orogenic shortening, crustal rheology, contrasting styles of orogen formation on rifted margin style, and the time delay between orogeny and subsequent rifted passive formation. Model results are compared to contrasting structural styles of rifted passive margin formation as observed in the South Atlantic. Ferreira, T.S., Caixeta, J.M., Lima, F.D., 2009. Basement control in Camamu and Almada rift basins. Boletim de Geociências da Petrobrás 17, 69-88. Fetter, M., 2009. The role of basement tectonic reactivation on the structural evolution

Incorporation mechanism for doping of metal ions into a passivating film at the lithium/thionyl chloride interface

Science.gov (United States)

Danilov, V. G.; Shikin, V. I.

1993-05-01

Effects of iron and titanium ions on corrosion processes of lithium in thionyl chloride electrolytes have been studied. Laws for the growth of the passivating film on the type and concentration of doped ions have been established, and equations for these are suggested. A stepwise mechanism of dopant incorporation into passivating film structure is presented.

Chemical properties of various organic electrolytes for lithium rechargeable batteries. Pt. 1.. Characterization of passivating layer formed on graphite in alkyl carbonate solutions

Energy Technology Data Exchange (ETDEWEB)

Mori, Shoichiro; Asahina, Hitoshi; Suzuki, Hitoshi; Yonei, Ayako; Yokoto, Kiyomi [Tsukuba Research Center, Mitsubishi Chemical Corporation, Ibaraki (Japan)

1997-09-01

The characteristics and reaction mechanisms of the passivating film formed on the surface of graphite were investigated in ethylene carbonate-diethyl carbonate solutions containing LiClO{sub 4}, LiPF{sub 6} and LiN(SO{sub 2}CF{sub 3}){sub 2}. The electron consumption resulting on the irreversible capacity of graphite was almost equivalent to that used in the one-electron reduction of Li{sup +} found in the film. The electrochemical reactions in the first discharge process may be divided into the following steps: (i) `initial film formation step` from 1.4 to 0.55 V; (ii) `main film formation step` from 0.55 to 0.2 V, and (iii) `lithium intercalation step from 0.2 to 0.0 V. Most of the passivating film is formed together with the lithium intercalation reaction at step (ii). The passivating film formed at this step contained a significant amount of organic film such as EtOCO{sub 2}Li, (CH{sub 2}OCO{sub 2}Li){sub 2}, etc. Through the consecutive formation of passivating film at steps (i) and (ii), lithium intercalation into graphite proceeds smoothly without further decomposition of organic electrolyte. (orig.)

Incorporation mechanism for doping of metal ions into a passive film at the lithium/thionyl chloride interface

Energy Technology Data Exchange (ETDEWEB)

Danilov, V.G. (Siberian Inst. of Tech., Krasnoyarsk (Russian Federation). Lab. of Electrochemistry); Shilkin, V.I. (Siberian Inst. of Tech., Krasnoyarsk (Russian Federation). Lab. of Electrochemistry)

1993-05-01

Effects of iron and titanium ions on corrosion processes of lithium in thionyl chloride electrolytes have been studied. Laws for the growth of the passivating film on the type and concentration of doped ions have been established, and equations for these are suggested. A stepwise mechanism of dopant incorporation into passivating film structure is presented. (orig.)

Fundamental studies of passivity and passivity breakdown

International Nuclear Information System (INIS)

Macdonald, D.D.; Urquidi-Macdonald, M.; Song, H.; Biaggio-Rocha, S.; Searson, P.

1991-11-01

This report summarizes the findings of our fundamental research program on passivity and passivity breakdown. During the past three and one half years in this program (including the three year incrementally-funded grant prior to the present grant), we developed and experimentally tested various physical models for the growth and breakdown of passive films on metal surfaces. These models belong to a general class termed ''point defects models'' (PDMs), in which the growth and breakdown of passive films are described in terms of the movement of anion and cation vacancies

XPS study of the passive films formed on nitrogen-implanted austenitic stainless steels

International Nuclear Information System (INIS)

Marcus, P.; Bussell, M.E.

1992-01-01

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H 2 SO 4 ). Alloys with two nitrogen doses have been prepared (2.5x10 16 and 2x10 17 N atoms/cm 2 ). The implanted alloys have been characterized by 15 N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic dissolution in the active state is enhanced, and the current density in the passive state is increased. Surface analysis of the alloys by XPS after passivation shows that implanted nitrogen is enriched on the surface during dissolution and passivation of the alloys. The process by which N is enriched on the surface is anodic segregation, which was first observed and characterized for S on Ni and Ni-Fe alloys. The passive films formed on both the unimplanted and implanted alloys have a bilayer structure with an inner oxide layer and an outer hydroxide layer, but on the nitrogen-implanted alloy, a chromium nitride phase is formed at the expense of the chromium oxide. After passivation of the implanted alloys, three chemical states of nitrogen are detected in the N 1s spectrum. The high binding energy (399.4 eV) peak corresponds to a nitrogen species located on the surface of the passive film, which is produced by reaction of the implanted nitrogen with the solution. (orig./WL)

A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing

Energy Technology Data Exchange (ETDEWEB)

St George, Tiffany [Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Department of Science, United States Coast Guard Academy, 27 Mohegan Ave., New London, CT 06320 (United States); Vlahos, Penny, E-mail: penny.vlahos@uconn.ed [Department of Chemistry, University of Connecticut, 55 Eagleville Road, Storrs, CT 06269 (United States); Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Harner, Tom [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada); Helm, Paul [Environmental Monitoring and Reporting Branch, Ontario Ministry of the Environment, 125 Resources Rd, Toronto, Ontario M9P 3V6 (Canada); Wilford, Bryony [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada)

2011-02-15

Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K{sub EVA-W} partition coefficients correlate well (r{sup 2} = 0.87) with Log K{sub OW} values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K{sub EVA-W} = 1.04 Log K{sub OW} + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. - Research highlights: Calibration and field testing of a thin-film passive sampler in marine systems. Ethylene vinyl acetate (EVA) is effective for a wide spectrum of organic compounds. EVA performs with high precision and reproducibility. EVA is effective in marine systems at environmentally relevant concentrations. EVA is recommended as a multi-media fugacity meter for environmental applications. - An ethylene vinyl acetate (EVA), thin-film passive sampler for the detection of organic compounds in marine environments is calibrated and field tested.

Electrochemical characterization of anode passivation mechanisms in copper electrorefining

Science.gov (United States)

Moats, Michael Scott

Anode passivation can decrease productivity and quality while increasing costs in modern copper electrorefineries. This investigation utilized electrochemical techniques to characterize the passivation behavior of anode samples from ten different operating companies. It is believed that this collection of anodes is the most diverse set ever to be assembled to study the effect of anode composition on passivation. Chronopotentiometry was the main electrochemical technique, employing a current density of 3820 A m-2. From statistical analysis of the passivation characteristics, increasing selenium, tellurium, silver, lead and nickel were shown to accelerate passivation. Arsenic was the only anode impurity that inhibited passivation. Oxygen was shown to accelerate passivation when increased from 500 to 1500 ppm, but further increases did not adversely affect passivation. Nine electrolyte variables were also examined. Increasing the copper, sulfuric acid or sulfate concentration of the electrolyte accelerated passivation. Arsenic in the electrolyte had no effect on passivation. Chloride and optimal concentrations of thiourea and glue delayed passivation. Linear sweep voltammetry, cyclic voltammetry, and impedance spectroscopy provided complementary information. Analysis of the electrochemical results led to the development of a unified passivation mechanism. Anode passivation results from the formation of inhibiting films. Careful examination of the potential details, especially those found in the oscillations just prior to passivation, demonstrated the importance of slimes, copper sulfate and copper oxide. Slimes confine dissolution to their pores and inhibit diffusion. This can lead to copper sulfate precipitation, which blocks more of the surface area. Copper oxide forms because of the resulting increase in potential at the interface between the copper sulfate and anode. Ultimate passivation occurs when the anode potential is high enough to stabilize the oxide film in

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

Directory of Open Access Journals (Sweden)

D. J. Winarski

2016-09-01

Full Text Available Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM, optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (∼10−2 Ω.cm in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal–oxide–semiconductor (CMOS devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

Science.gov (United States)

Winarski, D. J.; Anwand, W.; Wagner, A.; Saadatkia, P.; Selim, F. A.; Allen, M.; Wenner, B.; Leedy, K.; Allen, J.; Tetlak, S.; Look, D. C.

2016-09-01

Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (˜10-2 Ω .cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Formation of resonant bonding during growth of ultrathin GeTe films

NARCIS (Netherlands)

Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella

2017-01-01

A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of

The VIMOS Public Extragalactic Redshift Survey (VIPERS). Star formation history of passive red galaxies

Science.gov (United States)

Siudek, M.; Małek, K.; Scodeggio, M.; Garilli, B.; Pollo, A.; Haines, C. P.; Fritz, A.; Bolzonella, M.; de la Torre, S.; Granett, B. R.; Guzzo, L.; Abbas, U.; Adami, C.; Bottini, D.; Cappi, A.; Cucciati, O.; De Lucia, G.; Davidzon, I.; Franzetti, P.; Iovino, A.; Krywult, J.; Le Brun, V.; Le Fèvre, O.; Maccagni, D.; Marchetti, A.; Marulli, F.; Polletta, M.; Tasca, L. A. M.; Tojeiro, R.; Vergani, D.; Zanichelli, A.; Arnouts, S.; Bel, J.; Branchini, E.; Ilbert, O.; Gargiulo, A.; Moscardini, L.; Takeuchi, T. T.; Zamorani, G.

2017-01-01

Aims: We trace the evolution and the star formation history of passive red galaxies, using a subset of the VIMOS Public Extragalactic Redshift Survey (VIPERS). The detailed spectral analysis of stellar populations of intermediate-redshift passive red galaxies allows the build up of their stellar content to be followed over the last 8 billion years. Methods: We extracted a sample of passive red galaxies in the redshift range 0.4 quality. The spectra of passive red galaxies were stacked in narrow bins of stellar mass and redshift. We use the stacked spectra to measure the 4000 Å break (D4000) and the Hδ Lick index (HδA) with high precision. These spectral features are used as indicators of the star formation history of passive red galaxies. We compare the results with a grid of synthetic spectra to constrain the star formation epochs of these galaxies. We characterize the formation redshift-stellar mass relation for intermediate-redshift passive red galaxies. Results: We find that at z 1 stellar populations in low-mass passive red galaxies are younger than in high-mass passive red galaxies, similar to what is observed at the present epoch. Over the full analyzed redshift range 0.4 web site is http://www.vipers.inaf.it/

Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment

International Nuclear Information System (INIS)

Ishizuka, S.; Kato, S.; Okamoto, Y.; Sakurai, T.; Akimoto, K.; Fujiwara, N.; Kobayashi, H.

2003-01-01

The effects of the passivation of defects in polycrystalline nitrogen-doped cuprous oxide (Cu 2 O) thin films with hydrogen or cyanide treatment were studied. In the photoluminescence (PL) measurements, although the emission was not observed before treatment, luminescence of Cu 2 O at around 680 nm was observed after each treatment. This improvement in the luminescence property may be due to the passivation of non-radiative recombination centers by H or CN. The hole carrier concentration increased from the order of 10 16 to 10 17 cm -3 with hydrogen or cyanide treatment. From these results, both the hydrogen and cyanide treatments were found to be very effective to passivate defects and improve the optical and electrical properties of polycrystalline Cu 2 O thin films. The thermal stability of the passivation effects by the cyanide treatment is, however, superior to that by the hydrogen treatment

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2016-01-01

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

Ion backscattering, channeling and nuclear reaction analysis study of passive films formed on FeCrNi and FeCrNiMo (100) single crystals

Energy Technology Data Exchange (ETDEWEB)

Cohen, C; Schmaus, D [Paris-7 Univ., 75 (France). Groupe de Physique des Solides de l' ENS; Elbiache, A; Marcus, P [Ecole Nationale Superieure de Chimie, 75 - Paris (France)

1990-01-01

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H{sub 2}SO{sub 4} at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the {sup 16}O(d,p) {sup 17}O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12{plus minus}2) 10{sup 15} O/cm{sup 2}. The cationic compositions of the passive films have been determined by {sup 4}He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5{plus minus}2)10{sup 15} at/cm{sup 2} is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the passive film formed on both alloys: chromium represents about 50% of the cations. There is no evidence of molybdenum enrichment in the passive film formed on the Mo-alloyed stainless steel. The comparison of the results obtained at the two different incident beam energies (0.8MeV and 2MeV) reveals the existence of defects at the alloy/passive film interface. (author).

Correlation between passive film-induced stress and stress corrosion cracking of α-Ti in a methanol solution at various potentials

International Nuclear Information System (INIS)

Guo, X.Z.; Gao, K.W.; Chu, W.Y.; Qiao, L.J.

2003-01-01

The flow stress of a specimen of α-Ti before unloading is different with the yield stress of the same specimen after unloading and forming a passive film through immersing in a methanol solution at various constant potentials. The difference is the passive film-induced stress. The film-induced stress and susceptibility to stress corrosion cracking (SCC) in the methanol solution at various potentials were measured. At the stable open-circuit potential and under anodic polarization, both film-induced tensile stress σ p and susceptibility to SCC had a maximum value. The film-induced stress and SCC susceptibility, however, decreased steeply with a decrease in potential under cathodic polarization. When the potential V≤-280 mV SCE , the film-induced stress became compressive; correspondingly, susceptibility to SCC was zero. Therefore, the variation of film-induced stress with potential was consistent with that of susceptibility to SCC. A large film-induced tensile stress is the necessary condition for SCC of α-Ti in the methanol solution. The symbol and amount of the film-induced stress were related to the compositions of the passive film, which have been analyzed using the X-ray photoelectron spectrum (XPS)

Mesoscale Elucidation of Surface Passivation in the Li-Sulfur Battery Cathode.

Science.gov (United States)

Liu, Zhixiao; Mukherjee, Partha P

2017-02-15

The cathode surface passivation caused by Li 2 S precipitation adversely affects the performance of lithium-sulfur (Li-S) batteries. Li 2 S precipitation is a complicated mesoscale process involving adsorption, desorption and diffusion kinetics, which are affected profoundly by the reactant concentration and operating temperature. In this work, a mesoscale interfacial model is presented to study the growth of Li 2 S film on carbon cathode surface. Li 2 S film growth experiences nucleation, isolated Li 2 S island growth and island coalescence. The slow adsorption rate at small S 2- concentration inhibits the formation of nucleation seeds and the lateral growth of Li 2 S islands, which deters surface passivation. An appropriate operating temperature, especially in the medium-to-high temperature range, can also defer surface passivation. Fewer Li 2 S nucleation seeds form in such an operating temperature range, thereby facilitating heterogeneous growth and potentially inhibiting the lateral growth of the Li 2 S film, which may ultimately result in reduced surface passivation. The high specific surface area of the cathode microstructure is expected to mitigate the surface passivation.

PRE-RIFT COMPRESSIONAL STRUCTURES AS A CONTROL ON PASSIVE MARGIN FORMATION

DEFF Research Database (Denmark)

Schiffer, Christian; Petersen, Kenni Dinesen

Passive margins are commonly separated into volcanic and non-volcanic modes, each with a distinct formation mechanism and structure. Both form the transition from continental to oceanic crust. Large amounts of geophysical data at passive margins show that the tapering continental crust is often u...

Passivation Behavior of Type-316L Stainless Steel in the Presence of Hydrogen Sulfide Ions Generated from a Local Anion Generating System

International Nuclear Information System (INIS)

Lee, Jun-Seob; Kitagawa, Yuichi; Nakanishi, Takayuki; Hasegawa, Yasuchika; Fushimi, Koji

2016-01-01

The passivity of type 316L stainless steel was studied in a pH 8.4 boric acid-borate buffer solution containing hydrogen sulfide ions (HS − ) by using a local anion-generating system. During potentiostatic polarization of the stainless steel at a primary passive potential of 0.4 V SSE and at a secondary passive potential of 0.9 V SSE in solutions with and without HS − , the current density flowing for passive film formation was increased by the presence of HS − at both potentials, while 15 Hz impedance at 0.9 V SSE in the solution with HS − was larger than that in the solution without HS − . It was thought that the presence of HS − in the solution during film formation made the film less resistive and affected the film capacitance depending on the polarization potential. X-ray photoelectron spectroscopy (XPS) showed an increase in metal cation and oxygen anion vacancies in the passive film formed at the primary passive state in the solution containing HS − . Auger electron spectroscopy (AES) and Raman spectroscopy revealed that a sulfide layer was deposited on the stainless steel surface that was oxidized at the secondary passive state in the solution containing HS − . It is thought that application of a high potential changes the passivity of the stainless steel surface in the solution containing HS − .

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

Science.gov (United States)

Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

2014-10-21

Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

High-Pressure Water-Vapor Annealing for Enhancement of a-Si:H Film Passivation of Silicon Surface

International Nuclear Information System (INIS)

Guo Chun-Lin; Wang Lei; Zhang Yan-Rong; Zhou Hai-Feng; Liang Feng; Yang Zhen-Hui; Yang De-Ren

2014-01-01

We investigate the effect of amorphous hydrogenated silicon (a-Si:H) films passivated on silicon surfaces based on high-pressure water-vapor annealing (HWA). The effective carrier lifetime of samples reaches the maximum value after 210°C, 90min HWA. Capacitance-voltage measurement reveals that the HWA not only greatly reduces the density of interface states (D it ), but also decreases the fixed charges (Q fixed ) mainly caused by bulk defects. The change of hydrogen and oxygen in the film is measured by a spectroscopic ellipsometer and a Fourier-transform infrared (FTIR) spectrometer. All these results show that HWA is a useful method to improve the passivation effect of a-Si:H films deposited on silicon surfaces

Prevention of passive film breakdown on iron in a borate buffer solution containing chloride ion by coverage with a self-assembled monolayer of hexadecanoate ion

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2003-01-01

Breakdown of a passive film on iron in a borate buffer solution (pH 8.49) containing 0.1 M of Cl - was suppressed by coverage of the passive film surface with a self-assembled monolayer (SAM) of hexadecanoate ion C 15 H 31 CO 2 - (C 16 A - ). The pitting potential of an iron electrode previously passivated in the borate buffer at 0.50 V/SCE increased by treatment in an aqueous solution of sodium hexadecanoate for many hours, indicating protection of the passive film from breakdown caused by an attack on defects of the film with Cl - . No breakdown occurred over the potential range of the passive region by coverage with the SAM of C 16 A - in some cases. Structures of the passive film and the monolayer were characterized by X-ray photoelectron and Fourier transform infrared reflection spectroscopies and contact angle measurement with a drop of water

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

Science.gov (United States)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution studied by Mott–Schottky analysis in conjunction with the point defect model

Directory of Open Access Journals (Sweden)

A. Fattah-alhosseini

2016-11-01

Full Text Available The passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution, in the steady-state condition, has been explored using electrochemical impedance spectroscopy (EIS and Mott–Schottky analysis. Based on the Mott–Schottky analysis in conjunction with the point defect model (PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. The thickness of the passive film was increased linearly with the formation potential. These observations were consistent with the predictions of the PDM, noting that the point defects within the passive film are metal interstitials, oxygen vacancies, or both.

Stable High-Performance Perovskite Solar Cells via Grain Boundary Passivation

KAUST Repository

Niu, Tianqi

2018-03-12

The trap states at grain boundaries (GBs) within polycrystalline perovskite films deteriorate their optoelectronic properties, making GB engineering particularly important for stable high-performance optoelectronic devices. It is demonstrated that trap states within bulk films can be effectively passivated by semiconducting molecules with Lewis acid or base functional groups. The perovskite crystallization kinetics are studied using in situ synchrotron-based grazing-incidence X-ray scattering to explore the film formation mechanism. A model of the passivation mechanism is proposed to understand how the molecules simultaneously passivate the Pb-I antisite defects and vacancies created by under-coordinated Pb atoms. In addition, it also explains how the energy offset between the semiconducting molecules and the perovskite influences trap states and intergrain carrier transport. The superior optoelectronic properties are attained by optimizing the molecular passivation treatments. These benefits are translated into significant enhancements of the power conversion efficiencies to 19.3%, as well as improved environmental and thermal stability of solar cells. The passivated devices without encapsulation degrade only by ≈13% after 40 d of exposure in 50% relative humidity at room temperature, and only ≈10% after 24 h at 80 °C in controlled environment.

Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

International Nuclear Information System (INIS)

Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

2012-01-01

Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

Effect of applied potential on passivation and erosion–corrosion of a Fe-based amorphous metallic coating under slurry impingement

International Nuclear Information System (INIS)

Zheng, Z.B.; Zheng, Y.G.; Sun, W.H.; Wang, J.Q.

2014-01-01

Highlights: • The passive current density of coating increases with the increasing potential. • Preferential dissolution of high-valence oxides happens at high applied potential. • More chlorides exist in the passive film at high film formation potential. • Critical flow velocity under impingement is related to resistance of passive film. - Abstract: The passive behaviour and erosion–corrosion behaviour of a HVOF sprayed Fe-based amorphous metallic coating have been investigated in 3.5 wt.% NaCl solution by using potentiostatic polarisation, X-ray photoelectron spectroscopy and Mott–Schottky analysis. The fact that passive current density increased with rising potential might result from the preferential dissolution of high-valence oxides and the existence of more chlorides at a higher potential. The critical flow velocity decreased with rising potential because of the lower resistance of passive film at a higher potential. The reason why passive current density changed under jet impingement was discussed by a simple formula

Electrochemical study of the AISI 409 ferritic stainless steel: passive film stability and pitting nucleation and growth

International Nuclear Information System (INIS)

Souza, Juliana Sarango de; Oliveira, Leandro Antônio de; Antunes, Renato Altobelli; Sayeg, Isaac Jamil

2017-01-01

The aim of the present work was to study the passive film stability and pitting corrosion behavior of the AISI 409 stainless steel. The electrochemical tests were carried out in 0.1 M NaCl solution at room temperature. The general electrochemical behavior was assessed using electrochemical impedance spectroscopy (EIS) measurements whereas the semiconducting properties of the passive film were evaluated by the Mott-Schottky approach. Pitting corrosion was investigated using potentiodynamic and potentiostatic polarization tests. Surface morphology was examined using confocal laser scanning microscopy and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDS) analyses were carried out to identify the composition of precipitates that could act as preferential sites for the onset of pitting corrosion. The results showed that the passive film presents n-type semiconductive behavior. Grain boundaries played an important role as pitting initiation sites for the AISI 409 stainless steel. (author)

Electrochemical study of the AISI 409 ferritic stainless steel: passive film stability and pitting nucleation and growth

Energy Technology Data Exchange (ETDEWEB)

Souza, Juliana Sarango de [Universidade Federal de São Paulo (UNIFESP), Diadema, SP (Brazil). Departamento de Ciências Exatas e da Terra; Oliveira, Leandro Antônio de; Antunes, Renato Altobelli, E-mail: renato.antunes@ufabc.edu.br [Universidade Federal do ABC (CECS/UFABC), Santo André, SP (Brazil). Centro de Engenharia, Modelagem e Ciências Sociais Aplicadas; Sayeg, Isaac Jamil [Universidade de São Paulo (USP), SP (Brazil). Instituto de Geociências

2017-11-15

The aim of the present work was to study the passive film stability and pitting corrosion behavior of the AISI 409 stainless steel. The electrochemical tests were carried out in 0.1 M NaCl solution at room temperature. The general electrochemical behavior was assessed using electrochemical impedance spectroscopy (EIS) measurements whereas the semiconducting properties of the passive film were evaluated by the Mott-Schottky approach. Pitting corrosion was investigated using potentiodynamic and potentiostatic polarization tests. Surface morphology was examined using confocal laser scanning microscopy and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDS) analyses were carried out to identify the composition of precipitates that could act as preferential sites for the onset of pitting corrosion. The results showed that the passive film presents n-type semiconductive behavior. Grain boundaries played an important role as pitting initiation sites for the AISI 409 stainless steel. (author)

Film Formation of Ag Nanoparticles at the Organic-Aqueous Liquid Interface

Science.gov (United States)

Vigorita, John

2005-03-01

A wet-chemical method to make films by spontaneous assembly of passivated Ag nanoparticles at the organic-aqueous liquid interface is presented. The interfacial films exhibit a blue opalescence, or in other cases a silvery color, and are characterized with transmission electron microscopy and UV-visible spectrophotometry. Measurements indicate that nanoparticles in the interfacial film can form superlattices and in some cases nanostructures.

Physical phenomena stipulating nucleus formation, growth and structure films

Energy Technology Data Exchange (ETDEWEB)

Aleksandrov, L N [AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

1975-03-01

This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

Science.gov (United States)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

Science.gov (United States)

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Stable High-Performance Perovskite Solar Cells via Grain Boundary Passivation.

Science.gov (United States)

Niu, Tianqi; Lu, Jing; Munir, Rahim; Li, Jianbo; Barrit, Dounya; Zhang, Xu; Hu, Hanlin; Yang, Zhou; Amassian, Aram; Zhao, Kui; Liu, Shengzhong Frank

2018-04-01

The trap states at grain boundaries (GBs) within polycrystalline perovskite films deteriorate their optoelectronic properties, making GB engineering particularly important for stable high-performance optoelectronic devices. It is demonstrated that trap states within bulk films can be effectively passivated by semiconducting molecules with Lewis acid or base functional groups. The perovskite crystallization kinetics are studied using in situ synchrotron-based grazing-incidence X-ray scattering to explore the film formation mechanism. A model of the passivation mechanism is proposed to understand how the molecules simultaneously passivate the Pb-I antisite defects and vacancies created by under-coordinated Pb atoms. In addition, it also explains how the energy offset between the semiconducting molecules and the perovskite influences trap states and intergrain carrier transport. The superior optoelectronic properties are attained by optimizing the molecular passivation treatments. These benefits are translated into significant enhancements of the power conversion efficiencies to 19.3%, as well as improved environmental and thermal stability of solar cells. The passivated devices without encapsulation degrade only by ≈13% after 40 d of exposure in 50% relative humidity at room temperature, and only ≈10% after 24 h at 80 °C in controlled environment. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of the lithium salt nature over the surface film formation on a graphite electrode in Li-ion batteries: An XPS study

International Nuclear Information System (INIS)

Leroy, S.; Martinez, H.; Dedryvere, R.; Lemordant, D.; Gonbeau, D.

2007-01-01

The formation of a passivation film (solid electrolyte interphase, SEI) at the surface of the negative electrode of full LiCoO 2 /graphite lithium-ion cells using different salts (LiBF 4 , LiPF 6 , LiTFSI, LiBETI) in carbonate solvents as electrolyte was investigated by X-ray photoelectron spectroscopy (XPS). The analyzes were carried out at different potential stages of the first cycle, showing the potential-dependent character of the surface film species formation and the specificity of each salt. At 3.8 V, for all salts, we have mainly identified carbonated species. Beyond this potential, the specific behavior of LiPF 6 was identified with a high LiF deposit, whereas for other salts, the formation process of the SEI appears controlled by the solvent decomposition of the electrolyte

Effect of the niobium additions in the passive films potentiostatically grown in a sulphate medium

International Nuclear Information System (INIS)

Kuri, S.E.; Martins, M.; D'Alkaine, C.V.

1984-01-01

The stability of passive films potentiostatically grown on stainless steel electrodes was studied in a 2 N sulfuric acid. The effect of Niobium contents in the base metal was considered. The reactivation time was measured using the method of Potential Decay Measurements under Open-Circuit Conditions after electrochemical aging in the passivity region, and its influence on the surface oxidation states, was discussed. (Author) [pt

Use of color-change indicators to quantify passive films on the stainless steel valves of nuclear power plants

Energy Technology Data Exchange (ETDEWEB)

Cheng, Cong Qian [School of Materials Science, Engineering, Dalian University of Technology, Dalian 116085 (China); Yang, Shu Kai [School of Materials Science, Engineering, Dalian University of Technology, Dalian 116085 (China); Suzhou Nuclear Power Research Institute, Suzhou 215004 (China); Zhao, Jie, E-mail: jiezhao@dlut.edu.cn [School of Materials Science, Engineering, Dalian University of Technology, Dalian 116085 (China)

2016-02-15

Highlights: • A facile method to evaluate passivation quality by color change indicator. • Two indicators were compared in lab and applied on vales in nuclear power plants. • It shows that the higher value of color change the worse quality of passivation. • Traditional ferroxyl solution is unstable and might impair the vale surface. • The new indicator is more practicable than the ferroxyl test for on-site inspection. - Abstract: The passive film on nuclear-grade stainless steels was evaluated by quantifying its color changes. Coloration reactions were compared by using ferroin and blue dot solutions as indicators on the basis of the measured results in a laboratory. The reactions were then applied on stainless steel valves in a nuclear power plant. The degree of color change indicates the degree of growth of a passive film. The ferroin solution exhibits higher accuracy and more stable than blue dot solution in determining passive film quality. The potentiodynamic polarization curves show that blue dot solution might cause surface damage compared with ferroin solution. The inspection result on stainless steel valves supports our laboratory result. However, stainless steel exhibited a dramatic decrease in sensitivity to blue dot because of the intrinsic instability and high acidity of this solution. Ferroin solution is superior to blue dot solution for stainless steel facilities in a nuclear power plant.

Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

Energy Technology Data Exchange (ETDEWEB)

Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

2017-01-15

Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

Surface correlation behaviors of metal-organic Langmuir-Blodgett films on differently passivated Si(001) surfaces

Science.gov (United States)

Bal, J. K.; Kundu, Sarathi

2013-03-01

Langmuir-Blodgett films of standard amphiphilic molecules like nickel arachidate and cadmium arachidate are grown on wet chemically passivated hydrophilic (OH-Si), hydrophobic (H-Si), and hydrophilic plus hydrophobic (Br-Si) Si(001) surfaces. Top surface morphologies and height-difference correlation functions g(r) with in-plane separation (r) are obtained from the atomic force microscopy studies. Our studies show that deposited bilayer and trilayer films have self-affine correlation behavior irrespective of different passivations and different types of amphiphilic molecules, however, liquid like correlation coexists only for a small part of r, which is located near the cutoff length (1/κ) or little below the correlation length ξ obtained from the liquid like and self-affine fitting, respectively. Thus, length scale dependent surface correlation behavior is observed for both types of Langmuir-Blodgett films. Metal ion specific interactions (ionic, covalent, etc.,) in the headgroup and the nature of the terminated bond (polar, nonpolar, etc.,) of Si surface are mainly responsible for having different correlation parameters.

Investigation of corrosion and analysis of passive films concerning some nickel alloys and stainless steels in reconstructed geological environments

International Nuclear Information System (INIS)

Jallerat, Nelly

1984-01-01

This research thesis addresses the corrosion behaviour of materials which might be used for the fabrication of radioactive waste containers. After a bibliographical study on films formed on Fe-Cr-Ni alloys, this research concentrates on passivation and de-passivation phenomena of three nickel-base alloys among the most resistant to corrosion and which also meet processing and economic criteria: Hastelloy C4, Inconel 625 and ZICNDU 25-20. Titanium and Ti-Pd alloy are also studied. Parameters governing pitting corrosion are notably studied. After a recall of knowledge on passive films formed on Fe-Cr-Ni alloys, and a presentation of experimental and technical conditions, the author reports and discussed the results obtained by electrochemical studies, reports the determination of factors governing alloy passivation in geological waters. The influence of some soluble impurities is notably studied. The author reports the analysis by glow discharge optical emission spectrometry to determine the composition of passive films with respect to geological water nature, the immersion duration and the electrode potential. Additional surface analyses are performed by X-ray photoelectron spectrometry (XPS or ESCA) and secondary ion mass spectrometry (SIMS). Finally, the author uses a dosing method by neutron radio-activation of alloy elements to determine dissolution mechanisms [fr

Passive and transpassive behaviour of CoCrMo in simulated biological solutions

International Nuclear Information System (INIS)

Hodgson, A.W.E.; Kurz, S.; Virtanen, S.; Fervel, V.; Olsson, C.-O.A.; Mischler, S.

2004-01-01

In this work, the behaviour of a CoCrMo alloy under simulated body conditions was investigated. More specifically, the electrochemical properties of the alloy and the relevant mechanisms in the passive and transpassive states were studied in detail. Electrochemical techniques such as potentiodynamic and potentiostatic polarisation, cyclic voltammetry, rotating disc electrode and electrochemical impedance spectroscopy were employed. Further, ex situ X-ray photoelectron spectroscopy analysis of the passive films was carried out. A good correlation between the results obtained from all the experimental techniques was achieved. Overall, it was found that the passive film on CoCrMo changed in composition and thickness with both potential and time. The passive behaviour of the CrCrMo alloy is due to a formation an oxide film highly enriched with Cr (∼90% Cr oxides) on the alloy surface. The passive and transpassive behaviour of the alloy is hence dominated by the alloying element Cr. In the transpassive region, strong thickening of the oxide film takes place, combined with a change in the composition of the film, and strongly increased dissolution rate. In the transpassive region, all alloying elements dissolve according to the composition of the alloy. The metal ion release is also very strongly enhanced by cyclic variation of the potential between reducing and oxidizing conditions. In this case, during activation/repassivation cycles, cobalt dissolution is greater than expected from the composition of the alloy. Therefore, active dissolution behaviour is mainly dominated by the alloying element Co

The protective nature of passivation films on zinc: surface charge

International Nuclear Information System (INIS)

Muster, Tim H.; Cole, Ivan S.

2004-01-01

The influence of oxide surface charge on the corrosion performance of zinc metals was investigated. Oxidised zinc species (zinc oxide, zinc hydroxychloride, zinc hydroxysulfate and zinc hydroxycarbonate) with chemical compositions similar to those produced on zinc during atmospheric corrosion were formed as particles from aqueous solution, and as passive films deposited onto zinc powder, and rolled zinc, surfaces. Synthesized oxides were characterised by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and electron probe X-ray microanalysis. The zeta potentials of various oxide particles, as determined by microelectrophoresis, are reported as a function of pH. Particulates containing a majority of zinc hydroxycarbonate and zinc hydroxysulfate crystallites were found to possess a negative surface charge below pH 6, whilst zinc oxide-hydroxide and zinc hydroxychloride crystallites possessed isoelectric points (IEP's) higher than pH 8. The ability of chloride species to pass through a bed of 3 μm diameter zinc powder was found to increase for surfaces possessing carboxy and sulfate surface species, suggesting that negatively charged surfaces can aid in the repulsion of chloride ions. Electrochemical analysis of the open-circuit potential as a function of time at a fixed pH of 6.5 showed that the chemical composition of passive films on zinc plates influenced the ability of chloride ions to access anodic sites for periods of approximately 1 h

Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

International Nuclear Information System (INIS)

Pincik, E.; Kobayashi, H.; Takahashi, M.; Fujiwara, N.; Brunner, R.; Gleskova, H.; Jergel, M.; Muellerova, J.; Kucera, M.; Falcony, C.; Ortega, L.; Rusnak, J.; Mikula, M.; Zahoran, M.; Jurani, R.; Kral, M.

2004-01-01

This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electrical properties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solar cells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solar cell multilayer structures was achieved which is of primary practical importance

Electrochemical characterization of oxide film formed at high temperature on Alloy 690

Energy Technology Data Exchange (ETDEWEB)

Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

2012-02-15

Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

Influence of temperature, chloride ions and chromium element on the electronic property of passive film formed on carbon steel in bicarbonate/carbonate buffer solution

Energy Technology Data Exchange (ETDEWEB)

Li, D.G. [School of Materials Science and Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Tubular Goods Research Center of CNPC, Xi' an 710065 (China)], E-mail: dangguoli78@yahoo.com.cn; Feng, Y.R.; Bai, Z.Q. [Tubular Goods Research Center of CNPC, Xi' an 710065 (China); Zhu, J.W.; Zheng, M.S. [School of Materials Science and Engineering, Xi' an Jiaotong University, Xi' an 710049 (China)

2007-11-01

The influences of temperature, chloride ions and chromium element on the electronic property of passive film formed on carbon steel in NaHCO{sub 3}/Na{sub 2}CO{sub 3} buffer solution are investigated by capacitance measurement and electrochemical impedance spectroscopy (EIS). The results show that the passive film appears n-type semiconductive character; with increasing the solution temperature, the addition of chromium into carbon steel and increasing the concentration of chloride ions, the slopes of Mott-Schottky plots decrease, which indicates the increment of the defect density in the passive film. EIS results show that the transfer impedance R{sub 1} and the diffusion impedance W decrease with increasing the solution temperature, with the addition of chromium into carbon steel and with increasing the chloride ions concentration. It can be concluded that the corrosion protection effect of passive film on the substrate decreases with increasing the solution temperature, adding chromium into carbon steel and increasing chloride ions concentration.

Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

International Nuclear Information System (INIS)

Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

2014-01-01

The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing.

Science.gov (United States)

St George, Tiffany; Vlahos, Penny; Harner, Tom; Helm, Paul; Wilford, Bryony

2011-02-01

Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K(EVA-W) partition coefficients correlate well (r(2) = 0.87) with Log K(OW) values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K(EVA-W) = 1.04 Log K(OW) + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. Published by Elsevier Ltd.

Formation and microstructure of nickel oxide films

Energy Technology Data Exchange (ETDEWEB)

Marcius, Marijan [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ristic, Mira, E-mail: ristic@irb.hr [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ivanda, Mile; Music, Svetozar [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia)

2012-11-15

Highlights: Black-Right-Pointing-Pointer Difference in NiO films formed on Ni plate or glass substrate were found. Black-Right-Pointing-Pointer NiO particle sizes on Ni plate changed from nano to micron dimensions. Black-Right-Pointing-Pointer NiO particle sizes on glass substrate changed from {approx}16 to {approx}27 nm. Black-Right-Pointing-Pointer Raman and UV/Vis/NIR spectra are related to the microstructure of NiO films. - Abstract: The formation and microstructure of NiO films on different substrates were monitored using XRD, Raman, UV/Vis/NIR and FE-SEM/EDS techniques. The formation of NiO films on Ni plates in air atmosphere between 400 and 800 Degree-Sign C was confirmed by XRD and Raman spectroscopy. The origin of Raman bands and corresponding Raman shifts in the samples are discussed. An increase in the size of NiO particles in the films from nano to micro dimensions was demonstrated. A change in the atomic ratio Ni:O with an increase in heating temperature was observed. Polished Ni plates coated with a thin Ni-acetate layer upon heating at high temperatures gave similar NiO microstructures on the surface like in the case of non-treated Ni plates. Glass substrates coated with thin Ni-acetate films upon heating between 400 and 800 Degree-Sign C yielded pseudospherical NiO nanoparticles. The dominant Raman band as an indicator of NiO formation on a glass substrate was shown. The formation of NiO nanoparticles on glass substrates with maximum size distribution from 16 to 27 nm in a broad temperature range from 400 to 800 Degree-Sign C can be explained by the absence of a constant source of metallic nickel which was present in the case of Ni plates.

A feasibility study using radiochromic films for fast neutron 2D passive dosimetry

International Nuclear Information System (INIS)

Brady, Samuel L; Fallin, Brent; Gunasingha, Rathnayaka; Yoshizumi, Terry T; Howell, Calvin R; Crowell, Alexander S; Tonchev, Anton P; Dewhirst, Mark W

2010-01-01

The objective of this paper is threefold: (1) to establish sensitivity of XRQA and EBT radiochromic films to fast neutron exposure; (2) to develop a film response to radiation dose calibration curve and (3) to investigate a two-dimensional (2D) film dosimetry technique for use in establishing an experimental setup for a radiobiological irradiation of mice and to assess the dose to the mice in this setup. The films were exposed to a 10 MeV neutron beam via the 2 H(d,n) 3 He reaction. The XRQA film response was a factor of 1.39 greater than EBT film response to the 10 MeV neutron beam when exposed to a neutron dose of 165 cGy. A film response-to-soft tissue dose calibration function was established over a range of 0-10 Gy and had a goodness of fit of 0.9926 with the calibration data. The 2D film dosimetry technique estimated the neutron dose to the mice by measuring the dose using a mouse phantom and by placing a piece of film on the exterior of the experimental mouse setup. The film results were benchmarked using Monte Carlo and aluminum (Al) foil activation measurements. The radiochromic film, Monte Carlo and Al foil dose measurements were strongly correlated, and the film within the mouse phantom agreed to better than 7% of the externally mounted films. These results demonstrated the potential application of radiochromic films for passive 2D neutron dosimetry.

Semiconducting properties of oxide and passive films formed on AISI 304 stainless steel and Alloy 600

Directory of Open Access Journals (Sweden)

Ferreira M. G. S.

2002-01-01

Full Text Available The semiconducting properties of passive films formed on AISI 304 stainless steel and Alloy 600 in borate buffer solution were studied by capacitance (Mott-Schottky approach and photocurrent measurements. Oxide films formed on 304 stainless steel in air at 350 ºC have also been studied. The results obtained show that, in all cases the electronic structure of the films is comparable to that of a p-n heterojunction in which the space charges developed at the metal-film and film-electrolyte interfaces have also to be considered. This is in accordance with analytical results showing that the oxide films are in all cases composed of an inner region rich in chromium oxide and an outer region rich in iron oxide.

Photo-electrochemical and impedance investigation of passive layers grown anodically on titanium alloys

Energy Technology Data Exchange (ETDEWEB)

Oliveira, N.T.C. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Biaggio, S.R. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Piazza, S. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)]. E-mail: piazza@dicpm.unipa.it; Sunseri, C. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy); Di Quarto, F. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)

2004-10-15

The anodic behaviour of two titanium cast alloys, obtained by fusion in a voltaic arc under argon atmosphere, was analyzed in aerated aqueous solutions having different pH values. In all solutions the alloys, having nominal compositions Ti-50Zr at.% and Ti-13Zr-13Nb wt.%, displayed a valve-metal behaviour, owing to the formation of barrier-type oxide films. Passive films, grown potentiodynamically up to about 9 V, were investigated by photocurrent spectroscopy (PCS) and electrochemical impedance spectroscopy (EIS). These passive layers show photoactivity under anodic polarizations, with optical gaps close to 3.55 and 3.25 eV for the binary and the ternary alloy, respectively, independent of the anodizing electrolyte. Films grown on the binary alloy present insulating behaviour and anodic impedance spectra with one time constant; this was interpreted in terms of a single-layer mixed Ti-Zr oxide enriched in Ti with respect to the alloy composition. Also for the ternary alloy the results are consistent with the formation, upon anodization, of Ti-Nb-Zr mixed oxide films, but they display n-type semiconducting behaviour, owing to their poor content of ZrO{sub 2} groups.

Passivation and alloying element retention in gas atomized powders

Science.gov (United States)

Heidloff, Andrew J.; Rieken, Joel R.; Anderson, Iver E.

2017-12-05

A method for gas atomization of a titanium alloy, nickel alloy, or other alumina (Al.sub.2O.sub.3)-forming alloy wherein the atomized particles are exposed as they solidify and cool in a very short time to multiple gaseous reactive agents for the in-situ formation of a passivation reaction film on the atomized particles wherein the reaction film retains a precursor halogen alloying element that is subsequently introduced into a microstructure formed by subsequent thermally processing of the atomized particles to improve oxidation resistance.

Kinetics of Hydrocarbon formation in a-C:H Film deposition plasmas

International Nuclear Information System (INIS)

Cal, E. de la; Tabares, F. L.

1993-01-01

The formation of C2 and Cp hydrocarbons during the PACVD of a-C:H films from admixtures of methane with H2 and He has been investigated by mass spectrometry under several deposition condition. The time evolution of the observed species indicates that the formation mechanisms of ethylene and acetylene are sensitive to the conditions of the wall during the growing of the film. Acetylene are sensitive to the conditions of the wall during the growing of the film. Acetylene formation was found to be directly related to the formation of the film on top of the carburized metal. (Author) 12 refs

Kinetics of Hydrocarbon formation in a- C:H Film deposition plasmas

Energy Technology Data Exchange (ETDEWEB)

Cal, E de la; Tabares, F L

1993-07-01

The formation of C2 and Cp hydrocarbons during the PACVD of a-C:H films from admixtures of methane with H2 and He has been investigated by mass spectrometry under several deposition condition. The time evolution of the observed species indicates that the formation mechanisms of ethylene and acetylene are sensitive to the conditions of the wall during the growing of the film. Acetylene are sensitive to the conditions of the wall during the growing of the film. Acetylene formation was found to be directly related to the formation of the film on top of the carburized metal. (Author) 12 refs.

Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

CERN Document Server

Sohn, M K; Kim, K H; Yang, S G; Seo, K S

1998-01-01

In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

Modelling of passive films: complementarity and applicability to the electrochemical impedance spectroscopy analysis

International Nuclear Information System (INIS)

Boissy, Clement; Normand, Bernard

2013-01-01

A review of the published models to describe the passivation of metallic materials is proposed. The objective is to illustrate the importance of the selection of a model considering their complementarity. The discussion is based on an analysis to assess whether the mass transport in the film must be taken into account or not in the modelling of the electrochemical impedance. (authors)

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

Science.gov (United States)

Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

2018-03-14

An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Yamazaki, Haruka; Nonaka, Toshiaki; Fujii, Mami N.; Uraoka, Yukiharu

2015-07-01

We report the fabrication of a photosensitive hybrid passivation material on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) that greatly enhance its stability and improve its electrical characteristics. The hybrid passivation based on polysilsesquioxane is transparent and fabricated using a simple solution process. Because the passivation is photosensitive, dry etching was never performed during TFT fabrication. TFTs passivated with this material had a small threshold voltage shift of 0.5 V during positive bias stress, 0.5 V during negative bias stress, and -2.5 V during negative bias illumination stress. Furthermore, TFTs passivated by this layer were stable after being subjected to high relative humidity stress — confirming the superb barrier ability of the passivation. Analysis of secondary ion mass spectrometry showed that a large amount of hydrogen, carbon, and fluorine can be found in the channel region. We show that both hydrogen and fluorine reduced oxygen vacancies and that fluorine stabilized weak oxygen and hydroxide bonds. These results demonstrate the large potential of photosensitive hybrid passivation layers as effective passivation materials.

Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

International Nuclear Information System (INIS)

King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal

2008-01-01

Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles

Non-linear dynamics of the passivity breakdown of iron in acidic solutions

CERN Document Server

Sazou, D

2003-01-01

Breakdown of the iron passivity in acid solutions accompanied by current oscillations was investigated by using electrochemical techniques, which reveal the non-linear dynamical response of the system in the current-potential (I-E) and current-time (I-t) planes. Current oscillations of the Fe-electrolyte electrochemical system were studied in the (a) absence and (b) presence of chlorides. In case (a) two oscillatory regions were distinguished; one at low potentials associated with the formation-dissolution of a ferrous salt and another at higher potentials associated with the formation-breakdown of the oxide film. Chaotic oscillations appear in the former region whereas periodic oscillations of a relaxation type appear in the latter region. In case (b), complex periodic and aperiodic oscillations are induced by small amounts of chlorides due to pitting corrosion. Pitting corrosion is a multistage localized process of a great technological importance. It consists of a local breakdown of the passive oxide film ...

Passivation effect of water vapour on thin film polycrystalline Si solar cells

Czech Academy of Sciences Publication Activity Database

Pikna, Peter; Müller, Martin; Becker, C.; Fejfar, Antonín

2016-01-01

Roč. 213, č. 7 (2016), s. 1969-1975 ISSN 1862-6300 R&D Projects: GA MŠk LM2015087; GA ČR GA13-12386S Grant - others:AV ČR(CZ) DAAD-16-27 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : passivation, * plasma hydrogenation * silicon * solar cells * thin films * water vapour Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.775, year: 2016

Influence of cerium on passivity behavior of wrought AZ91 alloy

International Nuclear Information System (INIS)

Wang Henan; Li Ying; Wang Fuhui

2008-01-01

In this paper, more focus had been put on the passivity behavior of wrought AZ91 alloy with 1.5 mass% Ce. The passive current density of wrought AZ91 alloy increased with addition of Ce and the passive film became unstable. Structures and compositions of the passive films formed on wrought AZ91 alloy without and with Ce in 0.01 M NaOH aqueous solution were analyzed by potentiostatic polarization, potentiostatic-galvanostatic (P-G) transient technique and X-ray photoelectron spectroscopy (XPS). The results showed that Ce only accumulated in the inner layer of passive film in the form of CeO 2 . Further analysis revealed that there were two main effects of Ce on the passive process of wrought AZ91 alloy: first, the existence of CeO 2 in inner layer of passive film made mass transport through the passive film follow tangent hyperbolic (T) impedance instead of Warburg impedance (W); second, donor concentration (N d ) of the passive film increased by a factor 10 when 1.5 mass% Ce existed in wrought AZ91 alloy, which led to the higher passivity current density

Passivation of Si(111) surfaces with electrochemically grafted thin organic films

Science.gov (United States)

Roodenko, K.; Yang, F.; Hunger, R.; Esser, N.; Hinrichs, K.; Rappich, J.

2010-09-01

Ultra thin organic films (about 5 nm thick) of nitrobenzene and 4-methoxydiphenylamine were deposited electrochemically on p-Si(111) surfaces from benzene diazonium compounds. Studies based on atomic force microscopy, infrared spectroscopic ellipsometry and x-ray photoelectron spectroscopy showed that upon exposure to atmospheric conditions the oxidation of the silicon interface proceed slower on organically modified surfaces than on unmodified hydrogen passivated p-Si(111) surfaces. Effects of HF treatment on the oxidized organic/Si interface and on the organic layer itself are discussed.

Game Design Document Format For Video Games With Passive Dynamic Difficulty Adjustment

Directory of Open Access Journals (Sweden)

Pratama Wirya Atmaja

2016-07-01

satisfaction of its players is the primary mean to measure its quality. One important element of player’s satisfaction is a proper difficulty level, which is neither too easy nor too hard. The current state-of-the-art way to implement it is with Dynamic Difficulty Adjustment (DDA, which allows the difficulty level of a video game to be adjusted at run-time. Currently, the most popular type of DDA is the passive one. Meanwhile, Game Design Document (GDD is an important artefact in the development process of a video game software, and there is still no GDD format that supports the design of passive DDA mechanism. The aim of this research was to find a new GDD format that supports the mechanism. We modified a general purpose GDD format by adding new parts for designing passive DDA mechanism. We tested the usefulness of the modified format in a testing process involving developers and players. The developers developed video games using the modified GDD format and the general purpose one. Their development processes were observed and evaluated to know if there were any difficulties. The resulting video games were played by the players to find which are better in terms of passive DDA mechanism. The result of developer testing showed that the modified format is better than the general purpose one. The result of player testing showed that the video games made with the modified format are better than their counterparts, albeit by an insignificant margin. Based on the results, we declare that the modified GDD format is successful.Keywords: Video game, requirement engineering, game design document, dynamic difficulty adjustment, software development.

Characterization of konjac glucomannan-ethyl cellulose film formation via microscopy.

Science.gov (United States)

Xiao, Man; Wan, Li; Corke, Harold; Yan, Wenli; Ni, Xuewen; Fang, Yapeng; Jiang, Fatang

2016-04-01

Konjac glucomannan-ethyl cellulose (KGM-EC, 7:3, w/w) blended film shows good mechanical and moisture resistance properties. To better understand the basis for the KGM-EC film formation, optical microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM) were used to observe the formation of the film from emulsion. Optical microscopy images showed that EC oil droplets were homogeneously dispersed in KGM water phase without obviously coalescence throughout the entire drying process. SEM images showed the surface and cross-sectional structures of samples maintained continuous and homogeneous appearance from the emulsion to dried film. AFM images indicated that KGM molecules entangled EC molecules in the emulsion. Interactions between KGM and EC improved the stability of KGM-EC emulsion, and contributed to uniformed structures of film formation. Based on these output information, a schematic model was built to elucidate KGM-EC film-forming process. Copyright © 2015 Elsevier B.V. All rights reserved.

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

Energy Technology Data Exchange (ETDEWEB)

An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-08-04

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

Synergy between molybdenum and nitrogen on the pitting corrosion and passive film resistance of austenitic stainless steels as a pH-dependent effect

Energy Technology Data Exchange (ETDEWEB)

Loable, Carole, E-mail: carole.loable@lepmi.grenoble-inp.fr [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Dep. Eng. Quimica, Instituto Superior Técnico-Universidade de Lisboa, Av. Rovisco Pais, 1049 001 Lisbon (Portugal); Viçosa, Isadora N., E-mail: inogueira@poli.ufrj.br [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Mesquita, Thiago J., E-mail: Thiago.mesquita@total.com [CRU Ugitech, Avenue Paul Girod, 73403 Ugine Cedex (France); Mantel, Marc, E-mail: Marc.Mantel@ugitech.com [CRU Ugitech, Avenue Paul Girod, 73403 Ugine Cedex (France); Université Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Nogueira, Ricardo P., E-mail: rnogueira@pi.ac.ae [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Department of Chemical Engineering, The Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Berthomé, Gregory, E-mail: gregory.berthome@simap.grenoble-inp.fr [Université Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Chauveau, Eric, E-mail: eric.chauveau@ugitech.fr [Department of Chemical Engineering, The Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Roche, Virginie, E-mail: virginie.roche@lepmi.grenoble-inp.fr [Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France)

2017-01-15

This paper brings up some insights upon the pH dependence of the synergistic effect of Mo and N on the localized corrosion resistance of austenitic stainless steels. The objective of this work is to study the synergetic effect of Mo and N additions on corrosion and passive film properties of austenitic grades. A comparison between Mo containing (3 wt% Mo); Mo and N containing (3 wt% Mo and 0.1% N) and free Mo or free Mo and N grades of highly controlled laboratory heats was done considering their localized corrosion resistance and oxide film formation in different aggressive conditions, from neutral to alkaline pH. The passive layer was characterized by EIS and XPS analyses. The combined effect of Mo and N on the pitting potential was confirmed to be synergistic, and not just the addition of their individual effects. Moreover, this effect was found to be pH-dependent, being very positive in acid to neutral conditions whereas it was almost inexistent in high pH. - Highlights: • Laboratory austenitic stainless steels with Mo and/or N were tested. • Mo and N acted synergistically to improve pitting resistance. • Synergistic effect is pH-dependent. • N clearly enhanced the repassivation of austenitic SS in presence of Mo.

Synergy between molybdenum and nitrogen on the pitting corrosion and passive film resistance of austenitic stainless steels as a pH-dependent effect

International Nuclear Information System (INIS)

Loable, Carole; Viçosa, Isadora N.; Mesquita, Thiago J.; Mantel, Marc; Nogueira, Ricardo P.; Berthomé, Gregory; Chauveau, Eric; Roche, Virginie

2017-01-01

This paper brings up some insights upon the pH dependence of the synergistic effect of Mo and N on the localized corrosion resistance of austenitic stainless steels. The objective of this work is to study the synergetic effect of Mo and N additions on corrosion and passive film properties of austenitic grades. A comparison between Mo containing (3 wt% Mo); Mo and N containing (3 wt% Mo and 0.1% N) and free Mo or free Mo and N grades of highly controlled laboratory heats was done considering their localized corrosion resistance and oxide film formation in different aggressive conditions, from neutral to alkaline pH. The passive layer was characterized by EIS and XPS analyses. The combined effect of Mo and N on the pitting potential was confirmed to be synergistic, and not just the addition of their individual effects. Moreover, this effect was found to be pH-dependent, being very positive in acid to neutral conditions whereas it was almost inexistent in high pH. - Highlights: • Laboratory austenitic stainless steels with Mo and/or N were tested. • Mo and N acted synergistically to improve pitting resistance. • Synergistic effect is pH-dependent. • N clearly enhanced the repassivation of austenitic SS in presence of Mo.

Dynamic Characteristics of Rotors on Passive and Active Thrust Fluid-film Bearings with Fixed Pads

Directory of Open Access Journals (Sweden)

Babin Alexander

2018-01-01

Full Text Available Application of fluid-film bearings in rotor machines in many cases could have no alternative due to obvious advantages when compared to roller element bearings. Integration of information technology in mechanical engineering resulting in emergence of a new field of research – mechatronic bearings which allowed tracking condition of the most important parts of a machine and adjusting operational parameters of the system. Application of servo valves to control the flow rate through a fluid-film bearing is the most universal and simple way of rotor’s position control due to relative simplicity of modelling and absence of need to radically change the design of conventional hydrodynamic bearings. In the present paper numerical simulations of passive (conventional as opposed to mechatronic and active hybrid thrust fluid-film bearings with a central feeding chamber are presented, that are parts of a mechatronic rotor-bearing node. Numerical model of an active thrust bearing is based on solution of equations of hydrodynamics, rotor dynamics and an additional model of a servo valve. Various types of control have been investigated: P, PI and PID control, and the dynamic behaviour of a system has been estimated under various loads, namely static, periodic and impulse. A design of a test rig has been proposed to study passive and active thrust fluid-film bearings aimed at, among other, validation of numerical results of active bearings simulation.

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

International Nuclear Information System (INIS)

Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

2011-01-01

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

Film-thickness dependence of structure formation in ultra-thin polymer blend films

CERN Document Server

Gutmann, J S; Stamm, M

2002-01-01

We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

XPS and electrochemical studies of the dissolution and passivation of molybdenum-implanted austenitic stainless steels

International Nuclear Information System (INIS)

De Vito, E.; Marcus, P.

1993-01-01

X-ray Photoelectron Spectroscopy (XPS) was used to investigate the chemical composition and the chemical states of the passive film formed on austenitic stainless steels (Fe-19Cr-10Ni (at.%)) which have been implanted with molybdenum (Mo + , 100 keV, 2.5 x 10 16 at./cm 2 ). Prior to passivation the implanted alloy was characterized by RBS (Rutherford Backscattering Spectroscopy) and XPS. Alloys with well-defined surface concentrations of molybdenum were prepared by ion sputtering the implanted alloy in the preparation chamber of the spectrometer, to a fixed point in the implantation profile. The samples were then transferred without air exposure to a glove box with inert gas in which the electrochemical measurements were performed. After passivation, return transfer of the passivated samples was done with the same transfer device to avoid exposure to air. In 0.5 M H 2 SO 4 , the anodic dissolution current density decreases with increasing Mo content on the alloy surface. Surface analysis by XPS showed that the surface is enriched with molybdenum in the Mo 4+ chemical state. The current density in the passive state is similar for both the non-implanted and the implanted alloys. Surface analysis by XPS showed that the passive film has a bilayer structure (inner oxide and outer hydroxide) and that the hydroxide layer present on the surface of the passive film is markedly enriched with molybdenum in the Mo 6+ chemical state. The XPS measurements indicate that the presence of molybdenum favors the formation of chromium hydroxide at the expense of chromium oxide. A significant enrichment of the alloyed (Cr, Ni) and implanted (Mo) elements was also observed in the metallic phase under the passive film. The possible mechanisms of the effect of molybdenum on the corrosion resistance of stainless steels are discussed in light of the obtained surface analytical results

Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media.

Directory of Open Access Journals (Sweden)

Khadijah M Emran

Full Text Available The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9and Fe49Co49V2 (VX50 (at.%, were studied using electrochemical techniques including electrochemical frequency modulation (EFM, electrochemical impedance spectroscopy (EIS and cyclic polarization (CP measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM and atomic force microscopy (AFM. The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution.

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

International Nuclear Information System (INIS)

Hanyu, Yuichiro; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Kumomi, Hideya; Hosono, Hideo

2013-01-01

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H 2 O indicate that this threshold annealing temperature corresponds to depletion of H 2 O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested

Use of the piezoelectric film for the determination of cracks and defects - the passive and active electric potential CT method

International Nuclear Information System (INIS)

Kubo, S; Sakagami, T; Suzuki, T; Maeda, T; Nakatani, K

2008-01-01

The passive and active electric potential CT method was proposed by using piezoelectric film for identification of cracks and defects. This method is based on the principle of mutual conversion between mechanical strains and electric potential of piezoelectric material. A smart-layer was constructed using the piezoelectric film, and attached on a structure with a defect. When the structure was subjected to a mechanical load, the electric potential distribution appeared passively on the piezoelectric film due to the direct piezoelectric effect. The defect can be identified from the distribution with the help of inverse analysis. It was found that the crack could be identified reasonably, although the defect depth was not well estimated for the defects located far from the layer. When the electric signal was input to the smart-layer, acoustic wave was actively emitted from the layer due to the inverse piezoelectric effect, and a reflected wave was received on the layer. It was found that the depth of the defect could be estimated well. The simultaneous use of the passive method and the active method is promising for the identification of the defect.

Alkali passivation mechanism of sol-gel derived TiO2-SiO2 films coated on soda-lime-silica glass substrates

Energy Technology Data Exchange (ETDEWEB)

Matsuda, A; Matsuno, Y; Katayama, S; Tsuno, T [Nippon Steel Glass Co. Ltd., Tokyo (Japan); Toge, N; Minami, T [University of Osaka Prefecture, Osaka (Japan). College of Engineering

1992-09-01

TiO2-SiO2 films prepared by the sol-gel method serves as an effective alkali passivation layer on a soda-lime-silica glass substrate and the film is superior to a sol-gel derived pure SiO2 film from the view point of weathering resistance improvement. To clarify the reason, alkali passivation mechanism of sol-gel derived TiO2-SiO2 glass films with different TiO2 contents coated on a soda-lime-silica glass substrate was studied by SIMS (secondary ion mass spectroscopy) and XPS (X-ray photoelectron spectroscopy) analyses, and compared with the results of a sol-gel derived pure SiO2 film. As a result, the following conclusions were obtained: An increase in TiO2 content in the TiO2 SiO2 film increases the sodium concentration in the film, which was induced by sodium migration from the glass substrate during the heat-treatment. Because of the presence of sodium the TiO2 -SiO2 films serve not as a barrier but as an effective getter of alkali ions and thereby effectively improve the weathering resistance Of the glass substrate. 10 refs., 6 figs.

Characterization of electrochemical and passive behaviour of Alloy 59 in acid solution

International Nuclear Information System (INIS)

Luo, Hong; Gao, Shujun; Dong, Chaofang; Li, Xiaogang

2014-01-01

Highlights: • A considerably thinner n-type passive film is observed on the Alloy-59. • The passive film formed in air was thicker than that formed in acid solution. • Primary constituents of passive film in air and acid solution are (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively. - Abstract: The electrochemical behaviour and passive film properties of the Alloy 59 in sulfuric acid solution was evaluated by the potentiodynamic electrochemical measurements, electrochemical impedance spectroscopy, Mott-Schottky approach, and ex situ surface analytical technique as X-ray photoelectron spectroscopy (XPS) and Auger Electronic Spectrometer (AES). The results confirmed that the Alloy 59 exhibits well passive behaviour. A considerably thinner n-type passive film is observed on this type alloy. Based on the evaluations of surface composition analysis, the primary constituents of passive film formed in the air and acid solution are different, with the (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

Directory of Open Access Journals (Sweden)

Neha Batra

2015-06-01

Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

Electronic structure and pitting behavior of 3003 aluminum alloy passivated under various conditions

International Nuclear Information System (INIS)

Liu, Y.; Meng, G.Z.; Cheng, Y.F.

2009-01-01

Passivity of aluminum (Al) alloy 3003 in air and in aqueous solutions without and with chloride ions was characterized by electrochemical measurements, including cyclic polarization, electrochemical impedance spectroscopy (EIS), localized EIS and potential of zero charge, Mott-Schottky analysis and secondary ion mass spectroscopy (SIMS) technique. Stability, pitting susceptibility and repassivation ability of Al alloy 3003 under various film-forming conditions were determined. Results demonstrated that passive films formed on 3003 Al alloy in air and in Na 2 SO 4 solution without and with NaCl addition show an n-type semiconductor in nature. The passive film formed in chloride-free solution is most stable, and that formed in chloride-containing solution is most unstable, with the film formed in air in between. Pitting of Al alloy 3003 passivated both in air and in aqueous solutions is inevitable in the presence of chloride ions. There is the strongest capability for the air-passivated Al alloy 3003 to repassivate, and the weakest repassivating capability for Al alloy 3003 passivated in chloride-containing solution. The resistance of the passivated Al alloy 3003 to pitting corrosion is dependent on the competitive effects of pitting (breakdown of passive film) and repassivation (repair of passive film). According to the differences between corrosion potential and potential of zero charge, passive film formed in air has the strongest capability to adsorb chloride ions, while the film formed in chloride-containing solution the least. Chloride ions causing pitting of passivated Al alloy 3003 in air and in chloride-free solution come from the test solution, while those resulting in pitting of passivated Al alloy 3003 in chloride-containing solution mainly exist in the film during film-forming stage.

Structure Formation of Ultrathin PEO Films at Solid Interfaces—Complex Pattern Formation by Dewetting and Crystallization

Science.gov (United States)

Braun, Hans-Georg; Meyer, Evelyn

2013-01-01

The direct contact of ultrathin polymer films with a solid substrate may result in thin film rupture caused by dewetting. With crystallisable polymers such as polyethyleneoxide (PEO), molecular self-assembly into partial ordered lamella structures is studied as an additional source of pattern formation. Morphological features in ultrathin PEO films (thickness dewetting patterns and diffusion limited growth pattern of ordered lamella growing within the dewetting areas. Besides structure formation of hydrophilic PEO molecules, n-alkylterminated (hydrophobic) PEO oligomers are investigated with respect to self-organization in ultrathin films. Morphological features characteristic for pure PEO are not changed by the presence of the n-alkylgroups. PMID:23385233

Surface passivation by Al2O3 and a-SiNx: H films deposited on wet-chemically conditioned Si surfaces

NARCIS (Netherlands)

Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, K.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.

2012-01-01

The surface passivation of p- and n-type silicon by different chemically grown SiO2 films (prepared by HNO3, H2SO4/H2O2 and HCl/H2O2 treatments) was investigated after PECVD of a-SiNx:H and ALD of Al2O3 capping films. The wet chemically grown SiO2 films were compared to thermally grown SiO2 and the

Biomineralized diamond-like carbon films with incorporated titanium dioxide nanoparticles improved bioactivity properties and reduced biofilm formation.

Science.gov (United States)

Lopes, F S; Oliveira, J R; Milani, J; Oliveira, L D; Machado, J P B; Trava-Airoldi, V J; Lobo, A O; Marciano, F R

2017-12-01

Recently, the development of coatings to protect biomedical alloys from oxidation, passivation and to reduce the ability for a bacterial biofilm to form after implantation has emerged. Diamond-like carbon films are commonly used for implanted medical due to their physical and chemical characteristics, showing good interactions with the biological environment. However, these properties can be significantly improved when titanium dioxide nanoparticles are included, especially to enhance the bactericidal properties of the films. So far, the deposition of hydroxyapatite on the film surface has been studied in order to improve biocompatibility and bioactive behavior. Herein, we developed a new route to obtain a homogeneous and crystalline apatite coating on diamond-like carbon films grown on 304 biomedical stainless steel and evaluated its antibacterial effect. For this purpose, films containing two different concentrations of titanium dioxide (0.1 and 0.3g/L) were obtained by chemical vapor deposition. To obtain the apatite layer, the samples were soaked in simulated body fluid solution for up to 21days. The antibacterial activity of the films was evaluated by bacterial eradication tests using Staphylococcus aureus biofilm. Scanning electron microscopy, X-ray diffraction, Raman scattering spectroscopy, and goniometry showed that homogeneous, crystalline, and hydrophilic apatite films were formed independently of the titanium dioxide concentration. Interestingly, the diamond-like films containing titanium dioxide and hydroxyapatite reduced the biofilm formation compared to controls. A synergism between hydroxyapatite and titanium dioxide that provided an antimicrobial effect against opportunistic pathogens was clearly observed. Copyright © 2017 Elsevier B.V. All rights reserved.

Soybean oil in water-borne coatings and latex film formation study by AC impedance

Science.gov (United States)

Jiratumnukul, Nantana

Conventional coalescing agents such as butyl cellosolve, butyl carbitol, and TexanolRTM are widely use in the latex coatings industry to facilitate film formation at ambient temperature. Coalescent aids are composed of solvents with low evaporation rates. After water evaporates, coalescent aids would help soften polymer molecules and form continuous films, then gradually evaporates from the film. Coalescent aids, therefore, are considered as volatile organic compounds (VOC), which are of environmental concern. The main purpose of this research project was to prepare a fatty acid glycol ester from soybean oil and glycol (polyols). The soybean oil glycol ester can be used as a coalescent aid in latex paint formulation. The soybean oil glycol ester not only lowered the minimum film formation temperature of latex polymers and continuous film formed at ambient temperature, but also after it has facilitated film formation, does not substantially evaporate, but becomes part of the film. Soybean oil glycol esters, therefore, can reduce the VOC levels and facilitate film formation of latex paints. In the second part of this research AC-Impedance was used to investigate the efficiency of soybean oil coalescent aid in latex film formation relative to the conventional ones. The coating resistance showed that the efficiency of film formation was increased as a function of dry time. The coating resistance also exhibited the effect of soybean oil ester in latex film formation in the same fashion as a conventional coalescent aid, TexanolRTM.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

2013-11-11

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested.

Electrochemical properties of the passive film on bulk Zr–Fe–Cr intermetallic fabricated by spark plasma sintering

Energy Technology Data Exchange (ETDEWEB)

Bai, Yakui [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Ling, Yunhan, E-mail: yhling@mail.tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Xing, Shupei; Ma, Wen [School of Materials Science and Engineering, Inner Mongolia University of Technology, Huhhot 010051 (China)

2016-12-01

Highlights: • SPS was employed to prepare Zr-based intermetallics which were commonly existed in zircaloy. • Zr-based intermetallics act as cathode when they embedded in zirconium matrix. • The passive films on surface of intermetallics behaved as n-type semiconductors. • Carrier concentration of Zr(Fe{sub 3}Cr){sub 2} was much lower than that of other intermetallics. - Abstract: Although Zr-based second phase particles (SPPs) are important factors influencing corrosion resistance of zircaloy cladding materials, the corrosion behavior of SPPs has not been investigated by means of electrochemical method so far. In order to clarify the role of SPPs commonly existed in zircaloy, bulk Zr-based intermetallics were firstly fabricated by spark plasma sintering (SPS) at temperatures 1373 K and an applied pressure of 60 MPa in this work. Both the natural passive film on surface and oxidation behavior of intermetallic has been investigated in this work. X-ray diffraction (XRD) pattern showed that as-prepared intermetallic of crystal structure belongs to Laves phase with AB{sub 2} type. Electrochemical measurement of passive film on surface of bulk Zr-based intermetallic exhibited significant difference with that of zirconium. Potentiodynamic measurements results revealed that intermetallic exhibited higher corrosion potential and lower corrosion current density than that of pure zirconium, implying that Zr-based second phase will act as cathode when they are included in zirconium matrix. Meanwhile, significant improvement of Zr–Fe–Cr intermetallic on the water chemistry corrosion resistance was demonstrated comparing with Zr–Fe and Zr–Cr binary intermetallics.

Formation and control of excimer of a coumarin derivative in Langmuir–Blodgett films

Energy Technology Data Exchange (ETDEWEB)

Chakraborty, Santanu; Bhattacharjee, D.; Hussain, Syed Arshad, E-mail: sa_h153@hotmail.com

2014-01-15

In this communication we report the formation and control of excimer of a coumerin derivative 7-Hydroxy-N-Octadecyl Coumarin-3-Carboxamide (7HNO3C) assembled onto Langmuir–Blodgett (LB) films. Surface pressure–area per molecule isotherm revealed that 7HNO3C formed stable Langmuir monolayer at the air–water interface. Spectroscoipic characterizations confirmed the formation of excimer of 7HNO3C in the LB film prepared at 20 mN/m surface pressure. The excimer band remains present even when 7HNO3C molecules are diluted with a long chain fatty acid stearic acid in LB films. The excimer formation of 7HNO3C can be controlled by incorporating clay particle laponite in the LB film. The excimer band is totally absent in the hybrid 7HNO3C–laponite LB films. In-situ fluorescence imaging microscopy and atomic force microscopy confirmed the incorporation of clay laponite onto LB films. -- Highlights: • Formation of Langmuir monolayer and Langmuir–Blodgett (LB) film of a coumarin derivative. • Presence of excimeric species in the LB film lifted at 20 mN/m surface pressure is confirmed from the spectroscopic studies. • Control of excimer formation by incorporating clay particle laponite on to the LB film. • In-situ fluorescence imaging microscopy and atomic force microscopy confirmed the incorporation of clay laponite onto LB films.

Structure Formation of Ultrathin PEO Films at Solid Interfaces—Complex Pattern Formation by Dewetting and Crystallization

Directory of Open Access Journals (Sweden)

Hans-Georg Braun

2013-02-01

Full Text Available The direct contact of ultrathin polymer films with a solid substrate may result in thin film rupture caused by dewetting. With crystallisable polymers such as polyethyleneoxide (PEO, molecular self-assembly into partial ordered lamella structures is studied as an additional source of pattern formation. Morphological features in ultrathin PEO films (thickness < 10 nm result from an interplay between dewetting patterns and diffusion limited growth pattern of ordered lamella growing within the dewetting areas. Besides structure formation of hydrophilic PEO molecules, n-alkylterminated (hydrophobic PEO oligomers are investigated with respect to self-organization in ultrathin films. Morphological features characteristic for pure PEO are not changed by the presence of the n-alkylgroups.

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order ferromagnetically in agreement with experiment. We establish the dynamics and time scale of the film formation as a function of the film thickness. The process is split in two phases: formation of almost flat FeN layers and optimization of the distance to the substrate. Our calculated magnetic moments are 1.67 μ B, 2.14 μ B, and 2.21 μ B for one, two, and three monolayers of iron nitride. © 2011 Elsevier B.V. All rights reserved.

Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Science.gov (United States)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-05-01

Low temperature processable passivation materials are necessary to fabricate highly reliable amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) on organic substrates for flexible device applications. We investigated 3 types of poly-siloxane (Poly-SX) passivation layers fabricated by a solution process and cured at low temperatures (180 °C) for a-IGZO TFTs. This passivation layer greatly improves the stability of the a-IGZO device even after being subjected to positive (PBS) and negative bias stress (NBS). The field effect mobility (μ) of MePhQ504010 passivated on the TFT reached 8.34 cm2/Vs and had a small threshold voltage shift of 0.9 V after PBS, -0.8 V after NBS without the hump phenomenon. Furthermore, we analyzed the hydrogen and hydroxide states in the a-IGZO layer by secondary ion mass spectrometry and X-ray photoelectron spectroscopy to determine the cause of excellent electrical properties despite the curing performed at a low temperature. These results show the potential of the solution processed Poly-SX passivation layer for flexible devices.

Investigation of moisture stability and PL characteristics of terpineol-passivated organic–inorganic hybrid perovskite

Directory of Open Access Journals (Sweden)

Xin Guo

2016-09-01

Full Text Available Abstract This work presents a novel method for preparing perovskite films using a simple processing technique. Perovskite paste was prepared by dispersing an equimolar mix of PbI2 and methyl ammonium iodide powders into terpineol with stirring. From these precursors, perovskite films were fabricated using doctor blading and drying for 24 h at room temperature. The prepared films were then placed into relative humidity (RH levels of 30, 50, and 70 % to test the moisture stability. The crystal structure, phases, and morphology were investigated with XRD and SEM/EDX. These samples exhibited good stability against long time exposure to moisture for 70 days. The XRD results showed that samples stored at RH 70 % contained only a small amount of hydrate compound after 70 days storage, while in the sample stored at RH 50 %, the formation of PbI2 was observed. The sample at RH 30 % manifested almost no change when stored for the same storage period. We attribute the enhanced moisture stability, compared with the spin-coated samples, to a passivated surface of the perovskite film by terpineol which exhibits a hydrophobic moiety. Time-resolved photoluminescence measurements show that the passivation of surface defect states by the formation of either PbI2 or hydrated compound leads to prolonged charge carrier recombination times. Graphical Abstract

Production and study of mixed Al-Al2O3 thin films for passive electronic circuits

International Nuclear Information System (INIS)

Pruniaux, B.

1966-09-01

A new vacuum deposition process, named reactive evaporation, is used to realize passive thin film circuits. Using aluminium, oxidized at various steps in its vapor phase, we obtain: - Al-Al 2 O 3 cermet resistors (R □ = 10000 Ω □ , CTR 2 O 3 capacitors (C □ = 60000 pf/cm 2 , tg δ [fr

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

2016-06-20

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

Passive cooling in modern nuclear reactors

International Nuclear Information System (INIS)

Rouai, N. M.

1998-01-01

This paper presents some recent experimental results performed with the aim of understanding the mechanism of passive cooling. The AP 600 passive containment cooling system is simulated by an electrically heated vertical pipe, which is cooled by a naturally induced air flow and by a water film descending under gravity. The results demonstrate that although the presence of the water film improved the heat transfer significantly, the mode of heat transfer was very dependent on the experimental parameters. Preheating the water improved both film stability and overall cooling performance

Formation of sterilized edible-films based on caseinates: Effects of calcium and plasticizers

International Nuclear Information System (INIS)

Mezgheni, E.; D'Aprano, G.; Lacroix, M.

1998-01-01

Gamma-irradiation was used to produce free-standing sterilized edible films based on caseinate. The effect of calcium ions (Ca 2+ ) and two plasticizers, namely propylene glycol (PG) and triethylene glycol (TEG) were investigated, as well as the effect of the irradiation on both the gel formation and mechanical properties of the resulting films. Gamma-irradiation provoked formation of bityrosine, i.e. crosslinks, accounting for the increase of the puncture strength of films. The presence of PG or TEG enhanced the formation of crosslinks, leading to an improved mechanical strength of films. TEG was found to interact more favorably with the caseinate than PG, being responsible for the improved film extensibility. Addition of CA 2+ caused the formation of gels. The breaking strength of gels was directly related to the concentration of Ca 2+ , while the puncture strength of films was found to be almost independent. Moreover, high irradiation dose seemed to affect the protein structure, accounting for the decrease of the breaking strength of gels and for the depreciation of the mechanical behavior of films

Experimental method and preliminary studies of the passive containment water film evaporation mass transfer

Energy Technology Data Exchange (ETDEWEB)

Li, Cheng [State Nuclear Power Technology Research, Beijing (China). Development Center; State Nuclear Power Research Institute, Beijing (China); Yang, Lin; Zhao, Wei; Zhou, Shan; Du, Wangfang; Gao, Zhan; Li, Honegsen [State Nuclear Power Technology Research, Beijing (China). Development Center

2017-05-15

For larger containments and higher operation parameters, characteristics of the outside cooling of the PCCS are very important for the analysis on the containment integrity. A preliminary analysis was made and a four-step experimental method was used to numerically analyze the falling water film evaporation for the advanced passive containment. Then, the water flow stability along the outside wall of the containment was studied. The results fit well with those correlations without airflow when the air velocity is less than 5.0 m/s. However, when the air velocity is larger than 5.0 m/s, the influence of the air velocity on the water film will appear and the mean water film thickness will be thicker. Based on the prototype operation parameters, experimental studies were carried and the results were compared with the Dittus-Boelter correlation within the operation ranges. A modification factor was proposed for the conservative application of this correlation for nuclear safety analysis.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

International Nuclear Information System (INIS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N; Uraoka, Yukiharu; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ∼13 cm 2 V −1 s −1 and small threshold voltage which varied from ∼0–3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs. (paper)

Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

International Nuclear Information System (INIS)

Hallam, Brett; Abbott, Malcolm; Nampalli, Nitin; Hamer, Phill; Wenham, Stuart

2016-01-01

A three-state model is used to explore the influence of defect formation- and passivation rates of carrier-induced degradation related to boron-oxygen complexes in boron-doped p-type silicon solar cells within a hydrogen-based model. The model highlights that the inability to effectively mitigate carrier-induced degradation at elevated temperatures in previous studies is due to the limited availability of defects for hydrogen passivation, rather than being limited by the defect passivation rate. An acceleration of the defect formation rate is also observed to increase both the effectiveness and speed of carrier-induced degradation mitigation, whereas increases in the passivation rate do not lead to a substantial acceleration of the hydrogen passivation process. For high-throughput mitigation of such carrier-induced degradation on finished solar cell devices, two key factors were found to be required, high-injection conditions (such as by using high intensity illumination) to enable an acceleration of defect formation whilst simultaneously enabling a rapid passivation of the formed defects, and a high temperature to accelerate both defect formation and defect passivation whilst still ensuring an effective mitigation of carrier-induced degradation

Study by X-ray photoelectron spectroscopy (XPS) and radiochemistry (Cl36) of the interaction of chloride ions with a passive film formed on nickel

International Nuclear Information System (INIS)

Herbelin, Jean-Marc

1990-01-01

This research thesis reports the study of the influence of chlorides on nickel passivation by using a radiochemical method based on the use of the Cl 36 isotope and the X-ray photoelectron spectroscopy (XPS). The first one allows the in-situ determination of the adsorption of chlorides on the surface, or their inclusion in surface films during the electrochemical treatment. The XPS analysis allows the characterization of modifications induced by chlorides in passive films. The obtained results allow a better understanding in the interpretation of the mechanisms of corrosion induced by chloride ions [fr

Self Passivating W-based Alloys as Plasma Facing Material

International Nuclear Information System (INIS)

Koch, F.; Koeppl, S.; Bolt, H.

2007-01-01

Full text of publication follows: Tungsten (W) is presently the main candidate material for the plasma-facing protection of future fusion power reactors due to the low sputter erosion under bombardment by energetic D, T and He ions. Thus a W-based protection material may provide a wall erosion lifetime of the order of five years which is a pre-requisite for economic fusion reactor operation. A potential problem with the use of pure W in a fusion reactor is the formation of radioactive and highly volatile WO 3 compounds and their potential release under accidental conditions. A loss-of-coolant event in a He-cooled reactor would lead to a temperature rise to 1100 deg. C after approx. 10 to 30 days due to the nuclear decay heat of the in-vessel components. In such a situation additional accidental intense air ingress into the reactor vessel would lead to the formation of WO 3 and subsequent evaporation of radioactive (WO 3 ) x -clusters. The use of self passivating W alloys either as bulk material or as thick coating on the steel wall may be a passively safe alternative for the plasma-facing protection. The use of this material would eliminate the above mentioned concern related to pure W. To enable the formation of a protective film in oxidizing atmosphere which seals the tungsten surface from further oxidation, different elements have been investigated as corrosion protection additives. Therefore binary and ternary tungsten alloys were synthesised using magnetron sputtering. The oxidation behaviour of films deposited on inert substrates was measured with a thermo-balance set up under synthetic air at temperatures up to 1000 deg. C. Binary alloys of W-Si showed good self passivation properties by forming a SiO 2 film at the surface. The oxidation rate of a compound containing 11 wt.% Si was reduced by a factor of 10 2 compared to pure tungsten between 800 deg. C and 1000 deg. C. Using ternary alloys the oxidation behaviour could be further improved. A compound of W

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

Science.gov (United States)

Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

2015-12-09

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

Passive films and corrosion protection due to phosphonic acid inhibitors

Energy Technology Data Exchange (ETDEWEB)

Fang, J.L.; Liu, Q. (Nanjing Univ. (China)); Li, Y.; Wang, Z.W. (Nanjing Inst. of Chemical Tech. (China))

1993-04-01

For protecting mild steel from corrosion, aminotrimethylidenephosphonic acid (ATMP) was more effective than 1-hydroxyethylidene diphosphonic acid (HEDP), N.N-dimethylidenediphosphonic acid (EEDP), and ethylenediaminetetramethylidenephosphonic acid (EDTMP). A 20-min treatment in 1.0 mol/l of ATMP with a pH 0.23 at 45 C formed an anti-corrosive complex film that was composed of 48.4% O, 28.6% P, 7.0% Fe, 4.3% N, and 11.7% C, based on x-ray photoelectron spectroscopy and Auger electron spectroscopy. From differences in binding energies of Fe, N, and O, in the shift of C-N and P-O vibration, in the reflection FTIR spectra, and in the change of P-OH and Fe-N vibration before and after film formation, it was deduced that N and O in ATMP were coordinated with Fe[sub 2+] in the film.

Influence of Polycation Composition on Electrochemical Film Formation

Directory of Open Access Journals (Sweden)

Sabine Schneider

2018-04-01

Full Text Available The effect of polyelectrolyte composition on the electrodeposition onto platinum is investigated using a counterion switching approach. Film formation of preformed polyelectrolytes is triggered by oxidation of hexacyanoferrates(II (ferrocyanide, leading to polyelectrolyte complexes, which are physically crosslinked by hexacyanoferrate(III (ferricyanide ions due to preferential ferricyanide/polycation interactions. In this study, the electrodeposition of three different linear polyelectrolytes, namely quaternized poly[2-(dimethylaminoethyl methacrylate] (i.e., poly{[2-(methacryloyloxyethyl]trimethylammonium chloride}; PMOTAC, quaternized poly[2-(dimethylaminoethyl acrylate] (i.e., poly{[2-(acryloyloxyethyl]trimethylammonium chloride}; POTAC, quaternized poly[N-(3-dimethylaminopropylmethacrylamide] (i.e., poly{[3-(methacrylamidopropyl]trimethylammonium chloride}; PMAPTAC and different statistical copolymers of these polyelectrolytes with N-(3-aminopropylmethacrylamide (APMA, are studied. Hydrodynamic voltammetry utilizing a rotating ring disk electrode (RRDE shows the highest deposition efficiency DE for PMOTAC over PMAPTAC and over POTAC. Increasing incorporation of APMA weakens the preferred interaction of the quaternized units with the hexacyanoferrate(III ions. At a sufficient APMA content, electrodeposition can thus be prevented. Additional electrochemical quartz crystal microbalance measurements reveal the formation of rigid polyelectrolyte films being highly crosslinked by the hexacyanoferrate(III ions. Results indicate a different degree of water incorporation into these polyelectrolyte films. Hence, by adjusting the polycation composition, film properties can be tuned, while different chemistries can be incorporated into these electrodeposited thin hydrogel films.

The Effects of Applied Stress and Sensitization on the Passive Film Stability of Al-Mg Alloys

Science.gov (United States)

2013-06-01

evaluates effects of stress on the corrosion behavior for the aluminum magnesium alloy AA5083 in a comprehensive and systematic manner. This study used... comprehensive and systematic manner. This study used cyclic polarization and electrochemical impedance spectroscopy to study passive film stability...cyclic polarization DoD Department of Defense DON Department of the Navy EBD breakdown potential ECORR corrosion potential ECRIT critical potential

Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning

International Nuclear Information System (INIS)

Chen, Chao-Nan; Huang, Jung-Jie

2013-01-01

This study explored the removal of silicon nitride using KrF laser ablation technology with a high threshold fluence of 990 mJ/cm 2 . This technology was used for contact hole patterning to fabricate SiN x -passivation-based amorphous-silicon thin films in a transistor device. Compared to the photolithography process, laser direct patterning using KrF laser ablation technology can reduce the number of process steps by at least three. Experimental results showed that the mobility and threshold voltages of thin film transistors patterned using the laser process were 0.16 cm 2 /V-sec and 0.2 V, respectively. The device performance and the test results of gate voltage stress reliability demonstrated that laser direct patterning is a promising alternative to photolithography in the panel manufacturing of thin-film transistors for liquid crystal displays. - Highlights: ► KrF laser ablation technology is used to remove silicon nitride. ► A simple method for direct patterning contact-hole in thin-film-transistor device. ► Laser technology reduced processing by at least three steps

Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2014-01-01

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN x ) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH 3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN x /P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN x films. The outstanding results obtained imply that SiN x /P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

Science.gov (United States)

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Credible evidence for the passivation effect of remnant PbI₂ in CH₃NHCH₃PbICH₃ films in improving the performance of perovskite solar cells.

Science.gov (United States)

Wang, Shimao; Dong, Weiwei; Fang, Xiaodong; Zhang, Qingli; Zhou, Shu; Deng, Zanhong; Tao, Ruhua; Shao, Jingzhen; Xia, Rui; Song, Chao; Hu, Linhua; Zhu, Jun

2016-03-28

The role of remnant PbI2 in CH3NH3PbI3 films is still controversial, some investigations have revealed that the remnant PbI2 plays a passivation role, reduces the charge recombination in perovskite solar cells (PSCs), and improves the performance of PSCs, but the opposing views state that remnant PbI2 has no passivation effect and it would deteriorate the stability of the devices. In our investigation, the CH3NH3PbI3 films have been prepared by a two-step spin-coating method and the content of the remnant PbI2 in CH3NH3PbI3 films has been tuned by varying the preparation temperature. It has been found that increasing the heating temperature could increase the coverage of spin-coated PbI2 films, which has led to high coverage CH3NH3PbI3 films and more remnant PbI2 in CH3NH3PbI3 films, and as a result, the performance of PSCs was enhanced obviously and the maximum power conversion efficiency of 14.32 ± 0.28% was achieved by the PSCs prepared at 130/120 °C (PbI2 films were heated at 130 °C and CH3NH3PbI3 films were heated at 120 °C). Furthermore, the dark current, electrochemical impedance spectroscopy and time-resolved fluorescence emission decay measurements revealed that the charge recombination in PSCs has been gradually suppressed and the fluorescence emission lifetime has gradually increased with the content of remnant PbI2 increasing. Thus, the passivation effects of the unreacted and decomposed PbI2 in improving the performance of PSCs have been confirmed unquestionably.

Pb(Zr,TiO3 (PZT Thin Film Sensors for Fully-Integrated, Passive Telemetric Transponders

Directory of Open Access Journals (Sweden)

Richard X. FU

2011-04-01

Full Text Available The great potential of taking advantages of PZT in a single chip to achieve inexpensive, fully-integrated, passive telemetric transponders has been shown in this paper. The processes for the sputter deposition of Pb(Zr,TiO3 (PZT thin films from two different composite targets on both Si and c-plane sapphire substrates have been demonstrated. PZT thin films have been deposited by sputter technique. PZT films were deposited onto substrates (Si [(100 Cz wafer] and c-plane sapphire (0001//Ti//Pt followed by sputter-deposited Pt top electrodes. X-ray diffraction results showed that both sputtered PZT films were textured along the [110] direction. The degree of preference for the [110] direction was greater on sapphire substrate where the intensity of that peak is seen to be larger compared to the intensity one Si substrate. TEM data revealed that both sputtered PZT films were polycrystalline in nature. Selected area diffraction (SAD pattern showed that the degree of disorientation between the crystallites was smaller on sapphire substrate compared to on Si substrate, which confirmed the results from the XRD. The remnant polarization Pr on sapphire substrate was larger than on Si’s. The leakage current for the 11 % Pb target sputtered film was much less than 22 % Pb target sputtered film. The breakdown voltage on sapphire substrate was the best. However, for the 11 % Pb target sputtered film’s breakdown voltage was much higher than 22 % Pb target sputtered film.

Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Science.gov (United States)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-03-01

We investigated a fluorine-containing polysiloxane (Poly-SX) passivation layer fabricated by solution process for amorphous InGaZnO (a-IGZO) thin-film transistors (TFT). This passivation layer greatly improved the stability of the a-IGZO device even after being subjected to positive bias stress (PBS) and negative bias stress (NBS). The mobility (µ) of TFTs passivated by fluorine-containing Poly-SX increased by 31%-56% (10.50-12.54 cm2 V-1 s-1) compared with TFTs passivated by non-fluorinated Poly-SX (8.04 cm2 V-1 s-1). Increasing the amount of fluorine additives led to a higher µ in passivated TFTs. Aside from enhancing the performance, these passivation layers could increase the reliability of a-IGZO TFTs under PBS and NBS with a minimal threshold voltage shift (ΔV th) of up to  +0.2 V and  -0.1 V, respectively. Additionally, all TFTs passivated by the fluorinated passivation materials did not exhibit a hump effect after NBS. We also showed that fluorinated photosensitive Poly-SX, which can be fabricated without any dry etching process, had an effective passivation property. In this report, we demonstrated the photolithography of Poly-SX, and electrical properties of Poly-SX passivated TFTs, and analyzed the state of the a-IGZO layer to show the large potential of Poly-SX as an effective solution-processed passivation material.

Synovial fluid lubrication of artificial joints: protein film formation and composition.

Science.gov (United States)

Fan, Jingyun; Myant, Connor; Underwood, Richard; Cann, Philippa

2012-01-01

Despite design improvements, wear of artificial implants remains a serious health issue particularly for Metal-on-Metal (MoM) hips where the formation of metallic wear debris has been linked to adverse tissue response. Clearly it is important to understand the fundamental lubrication mechanisms which control the wear process. It is usually assumed that MoM hips operate in the ElastoHydrodynamic Lubrication (EHL) regime where film formation is governed by the bulk fluid viscosity; however there is little experimental evidence of this. The current paper critically examines synovial fluid lubrication mechanisms and the effect of synovial fluid chemistry. Two composition parameters were chosen; protein content and pH, both of which are known to change in diseased or post-operative synovial fluid. Film thickness and wear tests were carried out for a series of model synovial fluid solutions. Two distinct film formation mechanisms were identified; an adsorbed surface film and a high-viscosity gel. The entrainment of this gel controls film formation particularly at low speeds. However wear of the femoral head still occurs and this is thought to be due primarily to a tribo-corrosion mechanisms. The implications of this new lubrication mechanism and the effect of different synovial fluid chemistries are examined. One important conclusion is that patient synovial fluid chemistry plays an important role in determining implant wear and the likelihood of failure.

Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

International Nuclear Information System (INIS)

Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

2015-01-01

The Al 2 O 3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H 2 O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D 2 O instead of H 2 O in the ALD and found that the Al 2 O 3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH 3 groups than the high-temperature film. This CH 3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H 2 O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H 2 O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D 2 O-oxidant ALD but found that the mass density and dielectric constant of D 2 O-grown Al 2 O 3 films are smaller than those of H 2 O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al 2 O 3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD

Influence of substrate and film thickness on polymer LIPSS formation

Energy Technology Data Exchange (ETDEWEB)

Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A. [Instituto de Estructura de la Materia (IEM-CSIC), Serrano 121, Madrid 28006 (Spain); Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano (IQFR-CSIC), Serrano 119, Madrid 28006 (Spain)

2017-02-01

Highlights: • The estimation of temperature upon pulse accumulation shows that a small positive offset is caused by each individual pulse. • Number of pulses needed for LIPSS formation in PS thin films depends on polymer thickness. • Thermal conductivity and diffusivity of supporting substrate influence the onset for LIPSS formation and their quality. • Quality of LIPSS is affected by the substrate optical properties. - Abstract: Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200–380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

Quantitative evaluation about property of thin-film formation

Energy Technology Data Exchange (ETDEWEB)

Chen Huawei [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo (Japan) and School of Mechanical Engineering, Tianjin University (China)]. E-mail: chen_hua_wei@yahoo.com; Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo (Japan); Huang Tian [Department of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); School of Mechanical Engineering, Tianjin University (China); Zhang Dawei [School of Mechanical Engineering, Tianjin University (China)

2006-03-15

Chemical vapor deposition (CVD) is gradually emphasized as one promising method for nanomaterial formation. Such growth mechanism has been mainly investigated on basis of experiment. Due to large cost of the equipment of experiment and low level of current measurement, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin film. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000, 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Within one velocity range, not only the speed of epitaxial growth and adhesion between thin film and substrate were enhanced, but also the degree of epitaxy increased and the shape of thin film became more flat with velocity increasing. Moreover, the epitaxial growth became well as the temperature of substrate was raised within a certain range, and the degree of epitaxy of small cluster was larger than larger cluster. The results indicated that the property of thin film could be controlled if the effect of situations of process was made clear.

Quantitative evaluation about property of thin-film formation

International Nuclear Information System (INIS)

Chen Huawei; Hagiwara, Ichiro; Huang Tian; Zhang Dawei

2006-01-01

Chemical vapor deposition (CVD) is gradually emphasized as one promising method for nanomaterial formation. Such growth mechanism has been mainly investigated on basis of experiment. Due to large cost of the equipment of experiment and low level of current measurement, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin film. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000, 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Within one velocity range, not only the speed of epitaxial growth and adhesion between thin film and substrate were enhanced, but also the degree of epitaxy increased and the shape of thin film became more flat with velocity increasing. Moreover, the epitaxial growth became well as the temperature of substrate was raised within a certain range, and the degree of epitaxy of small cluster was larger than larger cluster. The results indicated that the property of thin film could be controlled if the effect of situations of process was made clear

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

Science.gov (United States)

Xu, Runshen

, ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

Energy Technology Data Exchange (ETDEWEB)

Luo, Hong, E-mail: luohong@hhu.edu.cn [College of Mechanics and Materials, Hohai University, Nanjing 210098 (China); Su, Huaizhi [State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Hohai University, Nanjing 210098,China (China); Dong, Chaofang; Li, Xiaogang [Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083,China (China)

2017-04-01

Highlights: • The pH value play an important role on passive mechanism of stainless steel. • The relationship between Cr/Fe ratio within the passive film and pH is non-linear. • Better corrosion resistance due to high Cr/Fe ratio and molybdates ions. - Abstract: In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

International Nuclear Information System (INIS)

Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

2017-01-01

Highlights: • The pH value play an important role on passive mechanism of stainless steel. • The relationship between Cr/Fe ratio within the passive film and pH is non-linear. • Better corrosion resistance due to high Cr/Fe ratio and molybdates ions. - Abstract: In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

Science.gov (United States)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

Passivation process of X80 pipeline steel in bicarbonate solutions

Science.gov (United States)

Zhou, Jian-Long; Li, Xiao-Gang; Du, Cui-Wei; Pan, Ying; Li, Tao; Liu, Qian

2011-04-01

The passivation process of X80 pipeline steel in bicarbonate solutions was investigated using potentiodynamic, dynamic electrochemical impedance spectroscopy (DEIS), and Mott-Schottky measurements. The results show that the shape of polarization curves changes with HCO{3/-} concentration. The critical `passive' concentration is 0.009 mol/L HCO{3/-} for X80 pipeline steel in bicarbonate solutions. No anodic current peak exists in HCO3/- solutions when the concentration is lower than 0.009 mol/L, whereas there are one and two anodic current peaks when the HCO3/- concentration ranges from 0.009 to 0.05 mol/L and is higher than 0.1 mol/L, respectively. DEIS measurements show that there exist active dissolution range, transition range, pre-passive range, passive layer formation range, passive range, and trans-passive range for X80 pipeline steel in the 0.1 mol/L HCO{3/-} solutions. The results of DEIS measurements are in complete agreement with the potentiodynamic diagram. An equivalent circuit containing three sub-layers is used to explain the Nyquist plots in the passive range. Analyses are well made for explaining the corresponding fitted capacitance and impedance. The Mott-Schottky plots show that the passive film of X80 pipeline steel is an n-type semiconductor, and capacitance measurements are in good accordance with the results of DEIS experiment.

Electrochemical and passive behaviour of tin alloyed ferritic stainless steel in concrete environment

Science.gov (United States)

Luo, Hong; Su, Huaizhi; Li, Baosong; Ying, Guobing

2018-05-01

In the present work, the electrochemical behavior and semiconducting properties of a tin alloyed ferritic stainless steel in simulated concrete solution in presence of NaCl were estimated by conventional electrochemical methods such as potentiodynamic polarization, electrochemical impedance spectroscopy, and capacitance measurement (Mott-Schottky approach). The surface passive film was analyzed by X-ray photoelectron spectroscopy. The results revealed a good agreement between pitting corrosion, electrochemical behaviour, and electronic properties. The p and n-type bilayer structure passive film were observed. The increase of Sn4+ oxide species in the passive film shows no beneficial effects on the pitting corrosion. In addition, the dehydration of the passive film was further discussed.

Formation of p-type ZnO thin film through co-implantation

Science.gov (United States)

Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

2017-01-01

We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

Influence of stress on passive behaviour of steel bars in concrete pore solution

International Nuclear Information System (INIS)

Feng Xingguo; Tang Yuming; Zuo Yu

2011-01-01

Research highlights: → The influence of load on passivity of steel in concrete pore solution is studied. → The passivity of steel in pore solution decreased as the load amplitude increased. → A micro-crack model is presented to explain passive behaviour of steel under loads. - Abstract: The influence of stress on passive behaviour of steel bars in concrete pore solution was studied with electrochemical impedance spectroscopy and X-ray photoelectron spectroscopy. The passive ability of steel decreased as the applied load increased and higher load had much greater influence on passivation than repeated loading of small magnitude. A micro-crack model was presented to explain the damage of passive layer by loads. Lower load caused micro-cracks in the passive film which might be completely recovered after unloading. Under higher load more micro-cracks were produced in the passive film and some may penetrate the film, leading to irreversible damages.

Designing new biocompatible glass-forming Ti75-x Zr10 Nbx Si15 (x = 0, 15) alloys: corrosion, passivity, and apatite formation.

Science.gov (United States)

Abdi, Somayeh; Oswald, Steffen; Gostin, Petre Flaviu; Helth, Arne; Sort, Jordi; Baró, Maria Dolors; Calin, Mariana; Schultz, Ludwig; Eckert, Jürgen; Gebert, Annett

2016-01-01

Glass-forming Ti-based alloys are considered as potential new materials for implant applications. Ti75 Zr10 Si15 and Ti60 Zr10 Nb15 Si15 alloys (free of cytotoxic elements) can be produced as melt-spun ribbons with glassy matrix and embedded single β-type nanocrystals. The corrosion and passivation behavior of these alloys in their homogenized melt-spun states have been investigated in Ringer solution at 37°C in comparison to their cast multiphase crystalline counterparts and to cp-Ti and β-type Ti-40Nb. All tested materials showed very low corrosion rates as expressed in corrosion current densities icorr  alloys passive states in a wide potential range. This corresponds to low passive current densities ipass  = 2 ± 1 µA/cm(2) based on the growth of oxide films with thickness d alloys is beneficial for stable surface passivity. The addition of Nb does not only improve the glass-forming ability and the mechanical properties but also supports a high pitting resistance even at extreme anodic polarization up to 4V versus SCE were oxide thickness values of d ∼35 nm are reached. With regard to the corrosion properties, the Nb-containing nearly single-phase glassy alloy can compete with the β-type Ti-40Nb alloy. SBF tests confirmed the ability for formation of hydroxyapatite on the melt-spun alloy surfaces. All these properties recommend the new glass-forming alloys for application as wear- and corrosion-resistant coating materials for implants. © 2015 Wiley Periodicals, Inc.

Processing and thin film formation of TiO{sub 2}-Pt nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Es-Souni, M.; Kartopu, G.; Habouti, S.; Piorra, A.; Solterbeck, C.H. [Institute for Materials and Surface Technology, Kiel University of Applied Sciences, Grenzstr. 3, 24149 Kiel (Germany); Es-Souni, Mar.; Brandies, H.F. [Faculty of Dentistry, Christian-Albrecht University, Kiel (Germany)

2008-02-15

Thin films of TiO{sub 2}-Pt nanocomposites containing 4 at% Pt have been processed via spin-coating. Film characterization involved XRD, Raman as well as XPS and scanning surface potential microscopy (SSPM). After annealing at 500 C the thin films consisted of nanocrystalline anatase and a few nm Pt nanoclusters. Annealing at 600 C resulted in the formation of a high volume fraction of rutile, {proportional_to}70%, and a coarsening of the microstructure, including Pt nanoparticles which attained a mean particle size of up to 11 nm. These results contrasted with those of pure TiO{sub 2} films obtained at 600 C which showed only a limited amount of rutile formation, namely 9%. Raman spectra of Pt-containing samples exhibited a fluorescence emission, as background to the Raman features, which was attributed to photoinduced luminescence from Pt nanoparticles supported by their surface plasmon resonance. Emission intensity being much higher in 600 C film indicated a difference between the two films in terms of the (Pt) particle size and crystallinity, in agreement with the XRD results. XPS investigations revealed different oxidation states of Pt at the surface and in the film interior. The spectra suggested a slight oxidation of Pt at the surface while mainly metallic Pt was revealed in the film interior. The morphology and distribution of the Pt nanoparticles in the films annealed at 600 C were investigated using SSPM. Discrete Pt nanoparticles, mainly distributed in the vicinity of TiO{sub 2} grain boundaries were revealed. Nanocomposite film formation, Pt distribution and morphology are explained in terms of the limited solubility of Pt in the TiO{sub 2} lattice and its higher surface energy in comparison to that of TiO{sub 2}. Both effects are believed to lead to the formation of Pt nanoparticles at the (anatase or rutile) grain boundaries. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mechanism of the transpassive dissolution and secondary passivation of chromium in sulphuric acid solutions

International Nuclear Information System (INIS)

Bojinov, M.; Betova, I.; Raicheff, R.; Fabricius, G.; Laitinen, T.; Saario, T.

1998-01-01

The transpassive dissolution and secondary passivation of Cr in 1..10 M H 2 SO 4 solutions were studied by a combination of different electrochemical methods. The steady-state polarization curves for transpassive dissolution exhibited a Tafel behaviour with a slope being independent on the acid concentration. Lower dissolution rates were measured for higher acid concentrations. Ring-disk measurements showed a release of both soluble Cr(VI) and Cr(III) during transpassivity. Impedance spectra were qualititatively similar in all acid concentrations, comprising one capacitive and two inductive semicircles. A kinetic model comprising two parallel transpassive dissolution paths was consistent with the experimental results. Typical passivation diagrams were observed for Cr in 10 M H 2 SO 4 , and a secondary passive state was established at higher potentials. The formation of the secondary passive film was confirmed by contact electric resistance (CER) measurements. A renewed version of the surface charge approach was consistent with the experimental results in the region of the secondary passivation. (orig.)

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

Science.gov (United States)

Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

2017-04-01

In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

Passivation behavior of a ferritic stainless steel in concentrated alkaline solutions

Directory of Open Access Journals (Sweden)

Arash Fattah-alhosseini

2015-10-01

Full Text Available The passivation behavior of AISI 430 ferritic stainless steel was investigated in concentrated alkaline solutions in relation to several test parameters, using electrochemical techniques. Increasing solution pH (varying from 11.5 to 14.0 leads to an increase in the corrosion rate of the alloy. Mott–Schottky analysis revealed that passive films formed on AISI 430 ferritic stainless steel behave as n-type semiconductor and the donor densities increased with pH. Electrochemical impedance spectroscopy (EIS results showed that the reciprocal capacitance of the passive film is directly proportional to its thickness, which decreases with pH increase. The results revealed that for this ferritic stainless steel in concentrated alkaline solutions, decreasing the solution pH offers better conditions for forming passive films with higher protection behavior, due to the growth of a much thicker and less defective film.

Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel.

Science.gov (United States)

Kim, Ki-Tae; Lee, Jung-Hee; Kim, Young-Sik

2017-06-27

Stainless steels have good corrosion resistance in many environments but welding or aging can decrease their resistance. This work focused on the effect of aging time and ultrasonic nano-crystal surface modification on the passivation behavior of 316L stainless steel. In the case of slightly sensitized 316L stainless steel, increasing the aging time drastically decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film, even though aging did not form chromium carbide and a chromium depletion zone. This behavior is due to the micro-galvanic corrosion between the matrix and carbon segregated area, and this shows the importance of carbon segregation in grain boundaries to the pitting corrosion resistance of stainless steel, in addition to the formation of the chromium depletion zone. UNSM (Ultrasonic Nano Crystal Surface Modification)-treatment to the slightly sensitized 316L stainless steel increased the pitting potential, decreased the passive current density, and increased the resistance of the passive film. However, in the case of heavily sensitized 316L stainless steel, UNSM-treatment decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film. This behavior is due to the dual effects of the UNSM-treatment. That is, the UNSM-treatment reduced the carbon segregation, regardless of whether the stainless steel 316L was slightly or heavily sensitized. However, since this treatment made mechanical flaws in the outer surface in the case of the heavily sensitized stainless steel, UNSM-treatment may eliminate chromium carbide, and this flaw can be a pitting initiation site, and therefore decrease the pitting corrosion resistance.

Effects of Nitrogen on the DOS and the Passive Film Breakdown Potential of AISI 304 Stainless Steel

International Nuclear Information System (INIS)

Choe, Han Cheol; Kim, Kwan Hyu; Kim, Myung Soo; Lee, Ho Jong

1992-01-01

Effects of nitrogen on the degree of sensitization (DOS) and the passive film breakdown potential (Eb) of AISI 304 stainless steel were studied by potentiostat. AISI 304 stainless steel samples containing 0.02 ∼ 0.10wt% nitrogen were sensitized by heat treatment at 650 .deg. C. The DOS was measured using the double-loop reactivation method of the electrochemical potentiodynamic reactivation (EPR) test with the potential scan rate of 150 mV/min in the electrolyte of 0.5 M H 2 SO 4 + 0.01 M KSCN solution at 25 .deg. C. The passive film breakdown potential (Eb) and repassivation potential (Er) were detected by using the cyclic potentiodynamic polarization test (CPPT) in 0.5M HCI solution at 25 .deg. C. In addition, corrosion morphologies were observed by SEM and optical microscope. It was found that nitrogen additions up to 0.1wt% decreased DOS and increased Eb and Er of AISI 304 stainless steel, whereas the increasing sensitization time increased the DOS and decreased Eb and Er. The corrosion morphologies showed severe pits and intergranular attacks in the samples of low nitrogen content and high DOS

Morphology, chemical composition , and electrochemical characteristics of colored titanium passive layers

International Nuclear Information System (INIS)

Jerkiewicz, G.; Hrapovic, S.; Vatankhah, G.; Luan, B.L.

1999-01-01

Brightly and uniformly colored passive layers on Ti are formed by application of AC polarization in aqueous NH 4 BF 4 . A wide spectrum of well-defined colors is accomplished by varying the AC voltage. The passive films are stable in the ambient and in aqueous chloride, perchlorate, sulfate solutions. Optical microscopy and SEM analyses indicate that the passive layers are compact and do not reveal fractures or cracks. XPS characterization of the colored passive layers reveals that their surface-chemical composition depends on the AC polarization voltage. The main constituents of the passive layers are Ti z+ , O 2- , and F - (z varies from 4 to 2 depending on the depth). Fluoride in the film originates form decomposition of NH 4 BF 4 and it accumulates at the inner metal/passive-film interface. XPS depth profiling shows that the higher the AC voltage applied, the thicker the passive film formed. Electrochemical properties of the colored Ti passive layers are determined by recording polarization curves in the -0.8 - 3.2 V, RHE, range and Tafel plots in the hydrogen evolution reaction (HER) region in 1.0 M aqueous H 2 SO 4 solution. The polarization curves show that the corrosion potential of the colored passive layers shifts towards less-negative potential indicating that they are more stable than Ti under the same conditions. The Tafel plots for the HER demonstrate that the passive layers have much higher activity than Ti towards the HER. The Tafel relations reveal new features that can be associated with the partial breakdown/decomposition of the passive layers and with H absorption. (author)

Kinetics of Hydrocarbon formation in a-C:H film deposition plasmas

International Nuclear Information System (INIS)

De la Cal, E.; Tabares, F.L.

1993-01-01

The formation of C 2 and C 3 hydrocarbons during the PACVD of a-C-H films from admixtures of methane with H 2 and He has been investigated by mass spectrometry under several deposition condition. The time evolution of the observed species indicates that the formation mechanism of ethylene and acetylene are sensitive to the conditions of the wall during the growing of the film. Acetylene are sensitive to the conditions of the wall during the growing of the carburized metal. (Author)

Process of film formation by anodizing AZ91D magnesium alloy

Energy Technology Data Exchange (ETDEWEB)

Qian Jiangang; Li Di; Zhang Feng [School of Materials Science and Engineering, Beijing Univ. of Aeronautics and Astronautics (China)

2005-07-01

The kinetics of film-forming process by anodizing AZ91D Mg alloy has been studied by ways of voltage-time and thickness-time curve, and the surface morphology, structure, composition and valence of element, phase constituent of anodic films have been analyzed by SEM, EDS, XPS and XRD respectively. The results show that the film-forming course can be divided into four stages. Formation of dense layer before sparking is the first stage. Formation of porous layer accompanied with a bit of small sparking is the second stage. Porous layer fast growth along with middle sparking is the third stage. Porous layer slowly-growth along with bigger sparking is the fourth stage. The anodic films contains approximately Mg,O,Si and B, which is composed mainly of MgO, MgSiO{sub 3} and Mg{sub 3}B{sub 2}O{sub 6}. (orig.)

Kinetic Monte Carlo simulation of nanoparticle film formation via nanocolloid drying

Science.gov (United States)

Kameya, Yuki

2017-06-01

A kinetic Monte Carlo simulation of nanoparticle film formation via nanocolloid drying is presented. The proposed two-dimensional model addresses the dynamics of nanoparticles in the vertical plane of a drying nanocolloid film. The gas-liquid interface movement due to solvent evaporation was controlled by a time-dependent chemical potential, and the resultant particle dynamics including Brownian diffusion and aggregate growth were calculated. Simulations were performed at various Peclet numbers defined based on the rate ratio of solvent evaporation and nanoparticle diffusion. At high Peclet numbers, nanoparticles accumulated at the top layer of the liquid film and eventually formed a skin layer, causing the formation of a particulate film with a densely packed structure. At low Peclet numbers, enhanced particle diffusion led to significant particle aggregation in the bulk colloid, and the resulting film structure became highly porous. The simulated results showed some typical characteristics of a drying nanocolloid that had been reported experimentally. Finally, the potential of the model as well as the remaining challenges are discussed.

The effect of hydrogen peroxide on uranium oxide films on 316L stainless steel

Energy Technology Data Exchange (ETDEWEB)

Wilbraham, Richard J., E-mail: r.wilbraham@lancaster.ac.uk [The Lloyd’s Register Foundation Centre for Nuclear Engineering, Engineering Department, Lancaster University, Bailrigg, Lancashire LA1 4YR (United Kingdom); Boxall, Colin, E-mail: c.boxall@lancaster.ac.uk [The Lloyd’s Register Foundation Centre for Nuclear Engineering, Engineering Department, Lancaster University, Bailrigg, Lancashire LA1 4YR (United Kingdom); Goddard, David T., E-mail: dave.t.goddard@nnl.co.uk [National Nuclear Laboratory, Preston Laboratory, Springfields, Preston, Lancashire PR4 0XJ (United Kingdom); Taylor, Robin J., E-mail: robin.j.taylor@nnl.co.uk [National Nuclear Laboratory, Central Laboratory, Seascale, Cumbria CA20 1PG (United Kingdom); Woodbury, Simon E., E-mail: simon.woodbury@nnl.co.uk [National Nuclear Laboratory, Central Laboratory, Seascale, Cumbria CA20 1PG (United Kingdom)

2015-09-15

Highlights: • The first report of the presence of both UO{sub 2} and polymeric UO{sub 2}{sup 2+} in the same electrodeposited U oxide sample. • The action of H{sub 2}O{sub 2} on electrodeposited U oxides is described using corrosion based concepts. • Electrodeposited U oxide freely dissolves at hydrogen peroxide concentrations <100 μmol dm{sup −3}. • At [H{sub 2}O{sub 2}] > 0.1 mmol dm{sup −3} dissolution is inhibited by formation of a studtite passivation layer. • At [H{sub 2}O{sub 2}] ⩾ 1 mol dm{sup −3} studtite formation competes with uranyl–peroxide complex formation. - Abstract: For the first time the effect of hydrogen peroxide on the dissolution of electrodeposited uranium oxide films on 316L stainless steel planchets (acting as simulant uranium-contaminated metal surfaces) has been studied. Analysis of the H{sub 2}O{sub 2}-mediated film dissolution processes via open circuit potentiometry, alpha counting and SEM/EDX imaging has shown that in near-neutral solutions of pH 6.1 and at [H{sub 2}O{sub 2}] ⩽ 100 μmol dm{sup −3} the electrodeposited uranium oxide layer is freely dissolving, the associated rate of film dissolution being significantly increased over leaching of similar films in pH 6.1 peroxide-free water. At H{sub 2}O{sub 2} concentrations between 1 mmol dm{sup −3} and 0.1 mol dm{sup −3}, formation of an insoluble studtite product layer occurs at the surface of the uranium oxide film. In analogy to corrosion processes on common metal substrates such as steel, the studtite layer effectively passivates the underlying uranium oxide layer against subsequent dissolution. Finally, at [H{sub 2}O{sub 2}] > 0.1 mol dm{sup −3} the uranium oxide film, again in analogy to common corrosion processes, behaves as if in a transpassive state and begins to dissolve. This transition from passive to transpassive behaviour in the effect of peroxide concentration on UO{sub 2} films has not hitherto been observed or explored, either in terms

Passivation of metals in thionyl-chloride electrolytes for lithium batteries: Summary abstract

Science.gov (United States)

Peebles, D. E.; Rogers, J. W., Jr.; Cieslak, W. R.; Delnick, F. M.

1986-10-01

Electrochemical methods have indicated that Ni and SS form passive films in SOCl2 electrolytes. The presence of a passive film has been verified by XPS, while the content of the films confirms that they were formed in situ, not prior to immersion in the electrolyte. In contrast, the electrochemical experiments have shown that both Pt and Mo behave kinetically as film-free inert electrodes, a result which has been confirmed by XPS.

Passivation of metals in thionyl-chloride electrolytes for lithium batteries. Summary abstract

Energy Technology Data Exchange (ETDEWEB)

Peebles, D.E.; Rogers, J.W. Jr.; Cieslak, W.R.; Delnick, F.M.

1986-01-01

Electrochemical methods have indicated that Ni and SS form passive films in SOCl/sub 2/ electrolytes. The presence of a passive film has been verified by XPS, while the content of the films confirms that they were formed in situ, not prior to immersion in the electrolyte. In contrast, the electrochemical experiments have shown that both Pt and Mo behave kinetically as film-free inert electrodes, a result which has been confirmed by XPS.

Efficient Inorganic Perovskite Light-Emitting Diodes with Polyethylene Glycol Passivated Ultrathin CsPbBr3 Films.

Science.gov (United States)

Song, Li; Guo, Xiaoyang; Hu, Yongsheng; Lv, Ying; Lin, Jie; Liu, Zheqin; Fan, Yi; Liu, Xingyuan

2017-09-07

Efficient inorganic perovskite light-emitting diodes (PeLEDs) with an ultrathin perovskite emission layer (∼30 nm) were realized by doping Lewis base polyethylene glycol (PEG) into CsPbBr 3 films. PEG in the perovskite films not only physically fills the crystal boundaries but also interacts with the perovskite crystals to passivate the crystal grains, reduce nonradiative recombination, and ensure efficient luminance and high efficiency. As a result, promoted brightness, current efficiency (CE), and external quantum efficiency (EQE) were achieved. The nonradiative decay rate of the PEG:CsPbBr 3 composite film is 1 order of magnitude less than that of the neat CsPbBr 3 film. After further optimization of the molar ratio between CsBr and PbBr 2 , a peak CE of 19 cd/A, a maximum EQE of 5.34%, and a maximum brightness of 36600 cd/m 2 were achieved, demonstrating the interaction between PEG and the precursors. The results are expected to offer some helpful implications in optimizing the polymer-assisted PeLEDs with ultrathin emission layers, which might have potential application in see-through displays.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Impact of thiol and amine functionalization on photoluminescence properties of ZnO films

International Nuclear Information System (INIS)

Jayalakshmi, G.; Saravanan, K.; Balasubramanian, T.

2013-01-01

In the present study, we have investigated surface functionalization of ZnO films with dodecanethiol (Thiol) and trioctylamine (amine) by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), contact angle (CA) and photoluminescence (PL) measurements. The chemical bondings of thiol and amine with ZnO have been confirmed via the formation of Zn–S and Zn–N bonds by XPS measurements. AFM measurements on ZnO films before and after surface functionalization with thiol and amine provide evidence for the successful functionalization of thiol and amine on ZnO surfaces without any island formation. The CA measurements on ZnO films before and after surface functionalization with thiol and amine show the hydrophobic nature. PL measurements of thiol and amine functionalized ZnO show enhancements of UV emission and quenching of visible emission. The enhanced UV emissions in thiol and amine functionalized ZnO films suggest that the surface defects such as oxygen vacancies are passivated by thiol and amine functionalization. -- Highlights: ► Surface functionalization is a new approach to reduce surface dependent non-radiative process. ► Oxygen vacancies are passivated on surface functionalization. ► Thiol and amine functionalized ZnO show enhancements of UV emission

Passivation of aluminum with alkyl phosphonic acids for biochip applications

Science.gov (United States)

Attavar, Sachin; Diwekar, Mohit; Linford, Matthew R.; Davis, Mark A.; Blair, Steve

2010-09-01

Self-assembly of decylphosphonic acid (DPA) and octadecylphosphonic acid (ODPA) was studied on aluminum films using XPS, ToF-SIMS and surface wettability. Modified aluminum films were tested for passivation against silanization and subsequent oligonucleotide attachment. Passivation ratios of at least 450:1 compared to unprotected aluminum were obtained, as quantified by attachment of radio-labeled oligos.

Extracted sericin from silk waste for film formation

Directory of Open Access Journals (Sweden)

Rungsinee Sothornvit

2010-03-01

Full Text Available Sericin is the second main component in cocoons, which are removed in the silk reeling process of the raw silk industry and in the silk waste degumming of the spun silk industry. The main amino acid of sericin, serine, exhibits a skin moisturing and antiwrinkle action, which is interesting to use for film formation in this study. The extraction conditions of sericin from two silk wastes, pieced cocoon and inferior knubbs were studied to find the optimum extraction conditions. Boiling water extraction was considered based on the response surface methodology (RSM in order to identify the important factors for the sericin extraction. The two factors considered were time and temperature. Both factors were needed to be independent parameters in the predicted equation in order to improve the model fit with R2 = 0.84. The components ofextracted sericin were 18.24% serine, 9.83% aspatate, and 5.51% glycine with a molecular weight of 132 kDa. Film formationfrom extracted sericin was carried out to find the optimum conditions. Extracted sericin could not form a stand-alonefilm. Therefore, polysaccharide polymers, such as glucomannan, were incorporated with glycerol to form a flexible film.Sericin-based films were characterized for its properties in terms of solubility and permeability before application. It wasfound that sericin-based films showed a film flexibility and solubility without an increasing film water vapor permeability.

Stepwise dynamics of an anionic micellar film - Formation of crown lenses.

Science.gov (United States)

Lee, Jongju; Nikolov, Alex; Wasan, Darsh

2017-06-15

We studied the stepwise thinning of a microscopic circular foam film formed from an anionic micellar solution of sodium dodecyl sulfate (SDS). The foam film formed from the SDS micellar solution thins in a stepwise manner by the formation and expansion of a dark spot(s) of one layer less than the film thickness. During the last stages of film thinning (e.g., a film with one micellar layer), the dark spot expansion occurs via two steps. Initially, a small dark circular spot inside a film of several microns in size is formed, which expands at a constant rate. Then, a ridge along the expanding spot is formed. As the ridge grows, it becomes unstable and breaks into regular crown lenses, which are seen as white spots in the reflected light at the border of the dark spot with the surrounding thicker film. The Rayleigh type of instability contributes to the formation of the lenses, which results in the increase of the dark spot expansion rate with time. We applied the two-dimensional micellar-vacancy diffusion model and took into consideration the effects of the micellar layering and film volume on the rate of the dark spot expansion [Lee et al., 2016] to predict the rate of the dark spot expansion for a 0.06M SDS film in the presence of lenses. We briefly discuss the Rayleigh type of instability in the case of a 0.06M SDS foam film. The goals of this study are to reveal why the crown lenses are formed during the foam film stratification and to elucidate their effect on the rate of spot expansion. Copyright © 2017 Elsevier Inc. All rights reserved.

Thermal Stress Behavior of Micro- and Nano-Size Aluminum Films

International Nuclear Information System (INIS)

Hanabusa, T.; Kusaka, K.; Nishida, M.

2008-01-01

In-situ observation of thermal stresses in thin films deposited on silicon substrate was made by X-ray and synchrotron radiation. Specimens prepared in this experiment were micro- and nano-size thin aluminum films with and without passivation film. The thickness of the film was 1 micrometer for micro-size films and 10, 20 and 50 nanometer for nano-size films. The stress measurement in micro-size films was made by X-ray radiation whereas the measurement of nano-size films was made by synchrotron radiation. Residual stress measurement revealed tensile stresses in all as-deposited films. Thermal stresses were measured in a series of heating- and cooling-stage. Thermal stress behavior of micro-size films revealed hysteresis loop during a heating and cooling process. The width of a hysteresis loop was larger in passivated film that unpassivated film. No hysteresis loops were observed in nano-size films with SiO 2 passivation. Strengthning mechanism in thin films was discussed on a passivation film and a film thickness

Formation and dissolution of the anodic oxide film on zirconium in alcoholic aqueous solutions

International Nuclear Information System (INIS)

Mogoda, A.S.

1995-01-01

The dissolution behavior of the anodic oxide film formed in alcoholic aqueous solutions was studied. Results indicated the dissolution mechanism of the duplex oxide film followed a zero-order rate equation. The increase in methanol concentration in the formation medium (phosphoric acid [H 3 PO 4 ]) resulted in formation of an oxide film that incorporated little phosphate ion and that dissolved at a low rate. The dissolution rate of the oxide film decreased with increasing methanol concentration in the dissolution medium. This was attributed to the increase in the viscosity of the medium, which led to a decrease in the diffusion coefficient of the dissolution product of the zirconium oxide film. Dissolution of the anodic oxide film also was investigated as a function of the chain length of alcohols

Kinetics of the formation of the titanium nitruro film (TiN)

International Nuclear Information System (INIS)

Rojas Andres; Devia C, Alfonso; Alzate Rafael

1999-01-01

They are presented in succinct form the factors that intervene in the growth, adhesion of the film and election of the support material in the process of formation of TiN film. Equally it's carried out the kinetic development of the possible reactions (ionization and excitement) involved in the process

The formation of soap bubbles created by blowing on soap films

Science.gov (United States)

Salkin, Louis; Schmit, Alexandre; Panizza, Pascal; Courbin, Laurent

2015-11-01

Using either circular bubble wands or long-lasting vertically falling soap films having an adjustable steady state thickness, we study the formation of soap bubbles created when air is blown through a nozzle onto a soap film. We vary nozzle radius, film size, space between the film and nozzle, and gas density, and we measure the gas velocity threshold above which bubbles are generated. The response is sensitive to confinement, that is, the ratio between film and jet sizes, and dissipation in the turbulent gas jet which is a function of the distance from the nozzle to the film. We observe four different regimes that we rationalize by comparing the dynamic pressure of a jet on the film and the Laplace pressure needed to create the curved surface of a bubble.

Passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains with embedded nano-twin bundles

International Nuclear Information System (INIS)

Li, Tianshu; Liu, Li; Zhang, Bin; Li, Ying; Yan, Fengkai; Tao, Nairong; Wang, Fuhui

2014-01-01

Highlights: • Nanometer-grains (NG) and bundles of nano-twins (NT) is synthesized in 316L. • (NG + NT) and NT enhance the concentration of active Fe Fe in the passive film. • (NG + NT) and NT enhance the passive ability. • A Cr 0 -enriched layer forms at the passive film/metal interface. - Abstract: The passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains (NG) and nano-twin bundles (NT) are investigated. The electrochemical results indicate that the spontaneous passivation ability and growth rate of passive film are improved. The X-ray photoelectron spectroscopy (XPS) shows that a Cr 0 -enriched layer forms at the passive film/metal interface. More nucleation sites afforded by the nanostructures and the enhanced diffusion rate of charged species across the passive film are believed to be responsible for the improved passive ability. The PDM model is introduced to elaborate the microscopic process of passivation

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

International Nuclear Information System (INIS)

Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

2008-01-01

CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

The effect of hydrogen peroxide on uranium oxide films on 316L stainless steel

Science.gov (United States)

Wilbraham, Richard J.; Boxall, Colin; Goddard, David T.; Taylor, Robin J.; Woodbury, Simon E.

2015-09-01

For the first time the effect of hydrogen peroxide on the dissolution of electrodeposited uranium oxide films on 316L stainless steel planchets (acting as simulant uranium-contaminated metal surfaces) has been studied. Analysis of the H2O2-mediated film dissolution processes via open circuit potentiometry, alpha counting and SEM/EDX imaging has shown that in near-neutral solutions of pH 6.1 and at [H2O2] ⩽ 100 μmol dm-3 the electrodeposited uranium oxide layer is freely dissolving, the associated rate of film dissolution being significantly increased over leaching of similar films in pH 6.1 peroxide-free water. At H2O2 concentrations between 1 mmol dm-3 and 0.1 mol dm-3, formation of an insoluble studtite product layer occurs at the surface of the uranium oxide film. In analogy to corrosion processes on common metal substrates such as steel, the studtite layer effectively passivates the underlying uranium oxide layer against subsequent dissolution. Finally, at [H2O2] > 0.1 mol dm-3 the uranium oxide film, again in analogy to common corrosion processes, behaves as if in a transpassive state and begins to dissolve. This transition from passive to transpassive behaviour in the effect of peroxide concentration on UO2 films has not hitherto been observed or explored, either in terms of corrosion processes or otherwise. Through consideration of thermodynamic solubility product and complex formation constant data, we attribute the transition to the formation of soluble uranyl-peroxide complexes under mildly alkaline, high [H2O2] conditions - a conclusion that has implications for the design of both acid minimal, metal ion oxidant-free decontamination strategies with low secondary waste arisings, and single step processes for spent nuclear fuel dissolution such as the Carbonate-based Oxidative Leaching (COL) process.

Phase-transfer and film formation of silver nanoparticles.

Science.gov (United States)

Sarkar, Anjana; Chadha, Ridhima; Biswas, Nandita; Mukherjee, Tulsi; Kapoor, Sudhir

2009-04-01

In this article, a simple method for either transfer of silver nanoparticles from formamide to chloroform or to form a film at their interface is demonstrated. The transfer of the particles is a two-step size-dependent process. The size distribution of the colloidal hydrophobic silver particles in chloroform was almost the same as that before its transfer. Particles can be isolated by evaporation of chloroform. During evaporation, the hydrophobic particles become hydrophilic (charged) due to the formation of bilayer of CTAB over their surface. The isolated particles can be re-dispersed easily in polar solvents such as water and methanol. Nanocrystalline film of Ag is also prepared at the formamide-chloroform interface using suitable stabilizers in two immiscible layers. The nanocrystals have been characterized by various microscopic and spectroscopic techniques. The free standing film could be easily transferred on solid support.

Effect of aluminium on the passivation of zinc–aluminium alloys in artificial seawater at 80 °C

International Nuclear Information System (INIS)

Kaewmaneekul, Tanapat; Lothongkum, Gobboon

2013-01-01

Highlights: ► Pure Zn and Zn–Al alloys passivate and depassivate in artificial seawater. ► Al retards passivation of Zn–Al alloys. ► Passive film composes of the inner film and the outer charge transfer layers. ► Al increases current density but decreases corrosion resistance of passive films. ► Al increases the electrical conductivity and the capacitance of the films. - Abstract: The effect of Al (0.15, 0.3 and 1.0 wt.%) on the passivation of Zn–Al alloys in artificial seawater at 80 °C is investigated by electrochemical measurements, scanning electron microscopy (SEM) and X-ray diffraction (XRD). It is found that the presence of Al in Zn–Al alloys can retard passivation. Potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) measurements show that Al increases the current density but decreases the corrosion resistance of passive films, respectively. Mott-Schottky analysis reveals that Al increases the electrical conductivity and the capacitance of the films. Passivation of Zn–Al alloys occurs in artificial seawater when the immersion time is between 120 and 288 h, due to the presence of various Zn and Al protective compounds at the surfaces. Depassivation occurs when the immersion time is between 288 and 720 h, probably due to the decrease of solution pH and the Cl − penetration mechanism.

Enhancement of polar crystalline phase formation in transparent PVDF-CaF{sub 2} composite films

Energy Technology Data Exchange (ETDEWEB)

Lee, Sang Goo; Ha, Jong-Wook, E-mail: jongwook@krict.re.kr; Sohn, Eun-Ho; Park, In Jun; Lee, Soo-Bok

2016-12-30

Highlights: • The crystalline phase in transparent PVDF-CaF{sub 2} composite films was investigated. • CaF{sub 2} promoted the formation of polar crystalline phases in PVDF matrix. • Ordered γ-phase was obtained by thermal treatment of as-cast films at the vicinity of its melting temperature. - Abstract: We consider the influence of calcium fluoride (CaF{sub 2}) nanoparticles on the crystalline phase formation of poly(vinylidene fluoride) (PVDF) for the first time. The transparent PVDF-CaF{sub 2} composite films were prepared by casting on PET substrates using N,N-dimethylacetamide (DMAc) as a solvent. It was found that CaF{sub 2} promoted the formation of polar crystalline phase of PVDF in composites, whereas nonpolar α-phase was dominant in the neat PVDF film prepared at the same condition. The portion of polar crystalline phase increased in proportional to the weight fraction of CaF{sub 2} in the composite films up to 10 wt%. Further addition of CaF{sub 2} suppressed completely the α-phase formation. Polar crystalline phase observed in as-cast composite films was a mixture of β- and γ-polymorph structures. It was also shown that much ordered γ-phase could be obtained through thermal treatment of as-cast PVDF-CaF{sub 2} composite film at the temperatures above the melting temperature of the composite films, but below that of γ-phase.

On the phase formation of sputtered hafnium oxide and oxynitride films

International Nuclear Information System (INIS)

Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

2010-01-01

Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O - ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O - ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O - ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O - bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

Synergistic Impact of Solvent and Polymer Additives on the Film Formation of Small Molecule Blend Films for Bulk Heterojunction Solar Cells

KAUST Repository

McDowell, Caitlin

2015-07-14

The addition of polystyrene (PS), a typical insulator, is empirically shown to increase the power conversion efficiencies (PCEs) of a solution-deposited bulk heterojunction (BHJ) molecular blend film used in solar cell fabrication: p-DTS(FBTTh2)2/PC71BM. The performance is further improved by small quantities of diiodooctane (DIO), an established solvent additive. In this study, how the addition of PS and DIO affects the film formation of this bulk heterojunction blend film are probed via in situ monitoring of absorbance, thickness, and crystallinity. PS and DIO additives are shown to promote donor crystallite formation on different time scales and through different mechanisms. PS-containing films retain chlorobenzene solvent, extending evaporation time and promoting phase separation earlier in the casting process. This extended time is insufficient to attain the morphology for optimal PCE results before the film sets. Here is where the presence of DIO comes into play: its low vapor pressure further extends the time scale of film evolution and allows for crystalline rearrangement of the donor phase long after casting, ultimately leading to the best BHJ organization. In situ measurement shows that polystyrene (PS) and diiodooctane (DIO) additives promote donor crystallite formation synergistically, on different time scales, and through different mechanisms. PS-rich films retain solvent, promoting phase separation early in the casting process. Meanwhile, the low vapor pressure of DIO extends the time scale of film evolution and allows for crystalline rearrangement of the donor phase after casting. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The strength limits of ultra-thin copper films

Energy Technology Data Exchange (ETDEWEB)

Wiederhirn, Guillaume

2007-07-02

Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

Advanced passivation techniques for Si solar cells with high-κ dielectric materials

International Nuclear Information System (INIS)

Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

2014-01-01

Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al 2 O 3 film has been found to provide negative fixed charge (−6.4 × 10 11  cm −2 ), whereas HfO 2 film provides positive fixed charge (3.2 × 10 12  cm −2 ). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO 2 film would provide better passivation properties than that of the ALD-Al 2 O 3 film in this research work.

Sorbent Film-Coated Passive Samplers for Explosives Vapour Detection Part A: Materials Optimisation and Integration with Analytical Technologies.

Science.gov (United States)

McEneff, Gillian L; Murphy, Bronagh; Webb, Tony; Wood, Dan; Irlam, Rachel; Mills, Jim; Green, David; Barron, Leon P

2018-04-11

A new thin-film passive sampler is presented as a low resource dependent and discrete continuous monitoring solution for explosives-related vapours. Using 15 mid-high vapour pressure explosives-related compounds as probes, combinations of four thermally stable substrates and six film-based sorbents were evaluated. Meta-aramid and phenylene oxide-based materials showed the best recoveries from small voids (~70%). Analysis was performed using liquid chromatography-high resolution accurate mass spectrometry which also enabled tentative identification of new targets from the acquired data. Preliminary uptake kinetics experiments revealed plateau concentrations on the device were reached between 3-5 days. Compounds used in improvised explosive devices, such as triacetone triperoxide, were detected within 1 hour and were stably retained by the sampler for up to 7 days. Sampler performance was consistent for 22 months after manufacture. Lastly, its direct integration with currently in-service explosives screening equipment including ion mobility spectrometry and thermal desorption mass spectrometry is presented. Following exposure to several open environments and targeted interferences, sampler performance was subsequently assessed and potential interferences identified. High-security building and area monitoring for concealed explosives using such cost-effective and discrete passive samplers can add extra assurance to search routines while minimising any additional burden on personnel or everyday site operation.

Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors

Directory of Open Access Journals (Sweden)

Fedorenko O. A.

2010-03-01

Full Text Available A new physical method of Cd1–xZnxTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field. It is shown that the method is easily realized and provides the obtaining of thick high-resistance oxide films, that essentially increases the surface electrical resistance of Cd1–xZnxTe-samples and diminishes leakage currents in them.

Formation of free-standing sterilized edible-films from irradiated caseinates

International Nuclear Information System (INIS)

Brault, D.; D'Aprano, G.; Lacroix, M.

1998-01-01

γ-irradiation was used to produce free-standing sterilized edible films based on milk protein, namely sodium-caseinate and calcium-caseinate. The nature of the counter-ion as well as the protein and glycerol concentrations were examined. Irradiation of solution based on calcium-caseinate produced more crosslinks than solution based on sodium-caseinate. As a consequence, films based on calcium-caseinate showed a better mechanical strength. Glycerol was found to play a double role in enhancing the formation of crosslinks within caseinate chains, accounting for the increase of the puncture strength, and acting as a plasticizer, being responsible for the improved film extensibility and viscoelasticity. Moreover, the effect of the irradiation on the mechanical properties were strongly dependent on the glycerol/protein ratio, i.e. the formulation of the films. Films of high quality and a satisfactory mechanical behaviour were generated at glycerol/protein ratios of 0.5 and 0.67

Investigation of the passive behaviour of AZ31B alloy in alkaline solutions

Directory of Open Access Journals (Sweden)

A. Fattah-alhosseini

2014-06-01

Full Text Available In this work, the passivity of AZ31B alloy in NaOH solutions was studied by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS and Mott–Schottky analysis. Potentiodynamic polarization results indicated that decreasing NaOH concentration leads to decrease the corrosion rate of this alloy. EIS results showed that the reciprocal capacitance (1/C of the passive film is directly proportional to its thickness which increases with decreasing NaOH concentration. Therefore, it is clear that dilute NaOH solutions offer better conditions for forming the passive films with higher protection behaviour, due to the growth of a much thicker and less defective films. The Mott–Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics, where the oxygen vacancies and interstitials (over the cation vacancies preponderated. Also, Mott–Schottky results showed that the donor densities evaluated from Mott–Schottky plots are in the range of 1020 cm−3 and decreased with decreasing NaOH concentration.

In-situ IR reflexion spectroscopy characterization of the passivation layer developed on the surface of lithium electrodes in organic medium; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

Energy Technology Data Exchange (ETDEWEB)

Barusseau, S. [Alcatel Alsthom Recherche, 91 - Marcoussis (France); Perton, F. [SAFT, Advanced and Industrial Battery Group, 86 - Poitiers (France); Rakotondrainibe, A.; Lamy, C. [Poitiers Univ., 86 (France). Laboratoire de Chimie 1, ``Electrochimie et Interactions``

1996-12-31

the development of lithium metal batteries is hindered by the bad reversibility of the Li{sup +}/Li pair, due to dendrites formation which limits the amount of active matter and can generate short-circuits. The chemical and electrochemical phenomena which take place at the electrode/organic electrolyte interface lead to the formation of a complex passivation film which is of prime importance for the functioning of this type of batteries. The in-situ infrared reflection spectroscopy is well adapted to the chemical study of the passivation layer. Two different techniques were used: the substraction normalized interfacial transform infrared spectroscopy (SNIFTIRS) and the electro-chemically modulated infrared reflectance spectroscopy. These methods have shown that the passivation layer that develops on the surface of the lithium electrode in contact with organic solutions (propylene carbonate, ethylene carbonate and dimethoxyethane) is mainly made of lithium alkyl carbonates (ROCO{sub 2}Li) and lithium carbonates (Li{sub 2}CO{sub 3}). (J.S.) 14 refs.

In-situ IR reflexion spectroscopy characterization of the passivation layer developed on the surface of lithium electrodes in organic medium; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

Energy Technology Data Exchange (ETDEWEB)

Barusseau, S [Alcatel Alsthom Recherche, 91 - Marcoussis (France); Perton, F [SAFT, Advanced and Industrial Battery Group, 86 - Poitiers (France); Rakotondrainibe, A; Lamy, C [Poitiers Univ., 86 (France). Laboratoire de Chimie 1, ` ` Electrochimie et Interactions` `

1997-12-31

the development of lithium metal batteries is hindered by the bad reversibility of the Li{sup +}/Li pair, due to dendrites formation which limits the amount of active matter and can generate short-circuits. The chemical and electrochemical phenomena which take place at the electrode/organic electrolyte interface lead to the formation of a complex passivation film which is of prime importance for the functioning of this type of batteries. The in-situ infrared reflection spectroscopy is well adapted to the chemical study of the passivation layer. Two different techniques were used: the substraction normalized interfacial transform infrared spectroscopy (SNIFTIRS) and the electro-chemically modulated infrared reflectance spectroscopy. These methods have shown that the passivation layer that develops on the surface of the lithium electrode in contact with organic solutions (propylene carbonate, ethylene carbonate and dimethoxyethane) is mainly made of lithium alkyl carbonates (ROCO{sub 2}Li) and lithium carbonates (Li{sub 2}CO{sub 3}). (J.S.) 14 refs.

Formation and enzymatic degradation of poly-l-arginine/fucoidan multilayer films.

Science.gov (United States)

Webber, Jessie L; Benbow, Natalie L; Krasowska, Marta; Beattie, David A

2017-11-01

A polyelectrolyte multilayer (PEM) system based on biopolymers has been constructed and studied in its formation and enzymatic breakdown. The multilayer is composed of fucoidan (a proven antimicrobial/anti-inflammatory seaweed-based polysaccharide) and poly-l-arginine (a polypeptide that can be readily degraded with trypsin to yield arginine, a known NO donor), thus making the multilayer a potential dual action surface treatment for wound dressings. Studies on the formation of the multilayer revealed that the film built-up in the expected stepwise manner with consistent reversal of the zeta potential upon the adsorption of each subsequent polyion. The completed film (8 bilayers) was seen to have low hydration (30% water), as determined by H 2 O/D 2 O solvent replacement studies using the quartz crystal microbalance, with an adsorbed mass (without hydration water) of approx. 4.8μgcm -2 , as determined by quantitative attenuated total reflectance Fourier transform infrared (ATR FTIR) spectroscopy. The enzymatic breakdown of the film in response to exposure to trypsin was also investigated, and the film was seen to release both polymers over time, with a projected complete film removal period of approximately 24h. Critically, this information was determined using ATR FTIR spectroscopy experiments, which allowed unambiguous deconvolution of the removal rates of the two polyions, which is information that cannot be obtained from other methodologies used to study enzymatic breakdown of surface films. Copyright © 2017 Elsevier B.V. All rights reserved.

Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi, E-mail: kawarada@waseda.jp [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan)

2015-06-07

The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of

Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

Directory of Open Access Journals (Sweden)

Damon Rafieian

2015-09-01

Full Text Available We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2, obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

Wireless passive radiation sensor

Science.gov (United States)

Pfeifer, Kent B; Rumpf, Arthur N; Yelton, William G; Limmer, Steven J

2013-12-03

A novel measurement technique is employed using surface acoustic wave (SAW) devices, passive RF, and radiation-sensitive films to provide a wireless passive radiation sensor that requires no batteries, outside wiring, or regular maintenance. The sensor is small (<1 cm.sup.2), physically robust, and will operate unattended for decades. In addition, the sensor can be insensitive to measurement position and read distance due to a novel self-referencing technique eliminating the need to measure absolute responses that are dependent on RF transmitter location and power.

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

Directory of Open Access Journals (Sweden)

Jung-Hoon Yu

2016-07-01

Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.

Films of Agarose Enable Rapid Formation of Giant Liposomes in Solutions of Physiologic Ionic Strength

OpenAIRE

Horger, Kim S.; Estes, Daniel J.; Capone, Ricardo; Mayer, Michael

2009-01-01

This paper describes a method to form giant liposomes in solutions of physiologic ionic strength, such as phosphate buffered saline (PBS) or 150 mM KCl. Formation of these cell-sized liposomes proceeded from hybrid films of partially dried agarose and lipids. Hydrating the films of agarose and lipids in aqueous salt solutions resulted in swelling and partial dissolution of the hybrid films and in concomitant rapid formation of giant liposomes in high yield. This method did not require the pre...

Hybrid passivated colloidal quantum dot solids

KAUST Repository

Ip, Alex

2012-07-29

Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

Hybrid passivated colloidal quantum dot solids

KAUST Repository

Ip, Alex; Thon, Susanna; Hoogland, Sjoerd H.; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan K.; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin H.; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, E. H.

2012-01-01

Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

Synergistic Effect of Nitrogen and Molybdenum on Localized Corrosion of Stainless Steels

International Nuclear Information System (INIS)

Kim, Y. S.

2010-01-01

According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (NO x - ), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. NO x - species improve the cation selectivity of the film, increasing the oxide content and film density. NO x - acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, NO x - can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, Molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and from more oxide and increase the

Specific characteristics of radon passive/open model detectors compared to passive/close and charcoal devices

International Nuclear Information System (INIS)

Andru, J.

1990-01-01

All passive/open detectors, also called Unfiltered alpha Track Detectors (UTDs), are built around KODAK LR115 film, only material sensitive to all ambient alpha particles and capable to work in open mode. The principle of open detectors is not new. They are largely used worldwide, often by scientists (in France, Italy, Japan, Norway, Sweden etc.). However, their particular functioning needs some explanation and some reminders. This paper is more aimed to discuss generalities than details of calculation. The estimation of the Potential Alpha Energy (PAE) concentration is about 4 times better than that from other passive detectors and it includes thoron progeny. The film is more sensitive to ambient decay products than it is to Radon as track count is higher for alpha's of greater initial energy

Measurement and Modelling of MIC Components Using Conductive Lithographic Films

OpenAIRE

Shepherd, P. R.; Taylor, C.; Evans l, P. S. A.; Harrison, D. J.

2001-01-01

Conductive Lithographic Films (CLFs) have previously demonstrated useful properties in printed mi-crowave circuits, combining low cost with high speed of manufacture. In this paper we examine the formation of various passive components via the CLF process, which enables further integration of printed microwave integrated circuits. The printed components include vias, resistors and overlay capacitors, and offer viable alternatives to traditional manufacturing processes for Microwave Inte-grate...

Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation

NARCIS (Netherlands)

Gielis, J.J.H.; Verlaan, V.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.; Terlinden, N.M.

2009-01-01

Recently, it was shown that Al2O3 thin films synthesized by (plasmaassisted) atomic layer deposition (ALD) provide excellent surface passivation of n, p and p+ type c-Si as highly relevant for c-Si photovoltaics. It was found that a large negative fixed charge density (up to 1013 cm-2) in the Al2O3

Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

2017-04-01

Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

OpenAIRE

Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

2015-01-01

We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx

Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Seok Hwan Jeong

2018-03-01

Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

Passivity of 316L stainless steel in borate buffer solution studied by Mott-Schottky analysis, atomic absorption spectrometry and X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Feng Zhicao; Cheng Xuequn; Dong Chaofang; Xu Lin; Li Xiaogang

2010-01-01

Research highlights: → The polarization curve of 316L SS possesses five turning potentials in passive region. → Films formed at turning potentials perform different electrochemical and semiconductor properties. → Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. → Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V SCE , 0.2 V SCE , 0.4 V SCE , 0.6 V SCE and 0.85 V SCE ). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. Further, the compositions of the passive films formed at turning potentials are investigated. The results reasonably explain why these potentials appear in the passive region and why specimens perform different properties at turning potentials.

Graph theory and binary alloys passivated by nickel

International Nuclear Information System (INIS)

McCafferty, E.

2005-01-01

The passivity of a nickel binary alloy is considered in terms of a network of -Ni-O-Ni- bridges in the oxide film, where Ni is the component of the binary alloy which produces passivity. The structure of the oxide is represented by a mathematical graph, and graph theory is used to calculate the connectivity of the oxide, given by the product of the number of edges in the graph and the Randic index. A stochastic calculation is employed to insert ions of the second metal into the oxide film so as to disrupt the connectivity of the -Ni-O-Ni- network. This disruption occurs at a critical ionic concentration of the oxide film. Mathematical relationships are developed for the introduction of a general ion B +n into the oxide film, and critical ionic compositions are calculated for oxide films on the nickel binary alloys. The notation B refers to any metal B which produces B +n ions in the oxide film, where +n is the oxidation number of the ion. The results of this analysis for Fe-Ni and Cu-Ni binary alloys are in good agreement with experimental results

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

Science.gov (United States)

Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

2018-01-31

The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

Reversible Formation of Silver Clusters and Particles in Polymer Films

National Research Council Canada - National Science Library

Gaddy, G. A; Korchev, A. S; McLain, Jason L; Black, J. R; Mills, German; Bratcher, Matthew S; Slaten, B. L

2004-01-01

.... The formation of Ag clusters and particles is monitored using UV-VIS spectroscopy. Films treated with H2O2 exhibit bleaching of the UV-VIS signals corresponding to Ag clusters and Ag particles that were generated during the photo reduction...

Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

NARCIS (Netherlands)

Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

2015-01-01

We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to

Soliton formation and evolution in passively-mode-locked lasers with ultralong anomalous-dispersion fibers

International Nuclear Information System (INIS)

Liu Xueming

2011-01-01

The soliton formation and evolution are numerically and experimentally investigated in passively-mode-locked lasers where pulses encounter ultralong anomalous-dispersion fibers. The pulse formation and evolution in lasers are determined by two balances, namely, nonlinearity and anomalous-dispersion balance and intracavity filtering and self-amplitude modulation balance. It is numerically found that a higher-energy soliton can be split into identical lower-energy multisolitons with exactly the same physical properties. Simulation results show that the separation of neighboring solitons is variational in the temporal domain. The temporal and spectral characteristics of solitons have large variations throughout the laser cavity, qualitatively distinct from the steady state of conventional solitons. The experimental observations confirm the theoretical predictions.

Advanced Passivation Technology and Loss Factor Minimization for High Efficiency Solar Cells.

Science.gov (United States)

Park, Cheolmin; Balaji, Nagarajan; Jung, Sungwook; Choi, Jaewoo; Ju, Minkyu; Lee, Seunghwan; Kim, Jungmo; Bong, Sungjae; Chung, Sungyoun; Lee, Youn-Jung; Yi, Junsin

2015-10-01

High-efficiency Si solar cells have attracted great attention from researchers, scientists, photovoltaic (PV) industry engineers for the past few decades. With thin wafers, surface passivation becomes necessary to increase the solar cells efficiency by overcoming several induced effects due to associated crystal defects and impurities of c-Si. This paper discusses suitable passivation schemes and optimization techniques to achieve high efficiency at low cost. SiNx film was optimized with higher transmittance and reduced recombination for using as an effective antireflection and passivation layer to attain higher solar cell efficiencies. The higher band gap increased the transmittance with reduced defect states that persisted at 1.68 and 1.80 eV in SiNx films. The thermal stability of SiN (Si-rich)/SiN (N-rich) stacks was also studied. Si-rich SiN with a refractive index of 2.7 was used as a passivation layer and N-rich SiN with a refractive index of 2.1 was used for thermal stability. An implied Voc of 720 mV with a stable lifetime of 1.5 ms was obtained for the stack layer after firing. Si-N and Si-H bonding concentration was analyzed by FTIR for the correlation of thermally stable passivation mechanism. The passivation property of spin coated Al2O3 films was also investigated. An effective surface recombination velocity of 55 cm/s with a high density of negative fixed charges (Qf) on the order of 9 x 10(11) cm(-2) was detected in Al2O3 films.

Characterization of Al2O3 surface passivation of silicon solar cells

International Nuclear Information System (INIS)

Albadri, Abdulrahman M.

2014-01-01

A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi; Schwingenschlö gl, Udo

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order

Main principles of passive devices based on graphene and carbon films in microwave-THz frequency range

Science.gov (United States)

Kuzhir, Polina P.; Paddubskaya, Alesia G.; Volynets, Nadezhda I.; Batrakov, Konstantin G.; Kaplas, Tommi; Lamberti, Patrizia; Kotsilkova, Rumiana; Lambin, Philippe

2017-07-01

The ability of thin conductive films, including graphene, pyrolytic carbon (PyC), graphitic PyC (GrPyC), graphene with graphitic islands (GrI), glassy carbon (GC), and sandwich structures made of all these materials separated by polymer slabs to absorb electromagnetic radiation in microwave-THz frequency range, is discussed. The main physical principles making a basis for high absorption ability of these heterostructures are explained both in the language of electromagnetic theory and using representation of equivalent electrical circuits. The idea of using carbonaceous thin films as the main working elements of passive radiofrequency (RF) devices, such as shields, filters, polarizers, collimators, is proposed theoretically and proved experimentally. The important advantage of PyC, GrI, GrPyC, and GC is that, in contrast to graphene, they either can be easily deposited onto a dielectric substrate or are strong enough to allow their transfer from the catalytic substrate without a shuttle polymer layer. This opens a new avenue toward the development of a scalable protocol for cost-efficient production of ultralight electromagnetic shields that can be transferred to commercial applications. A robust design via finite-element method and design of experiment for RF devices based on carbon/graphene films and sandwiches is also discussed in the context of virtual prototyping.

Formation of barrier-type anodic films on ZE41 magnesium alloy in a fluoride/glycerol electrolyte

International Nuclear Information System (INIS)

Hernández-López, J.M.; Němcová, A.; Zhong, X.L.; Liu, H.; Arenas, M.A.; Haigh, S.J.; Burke, M.G.; Skeldon, P.; Thompson, G.E.

2014-01-01

Highlights: • Barrier anodic films formed on ZE41 Mg alloy in glycerol/fluoride electrolyte. • Films contain oxygen and fluorine species; formation ratio ∼1.3 nm V −1 . • Nanocrystalline film structure, with MgO and MgF 2. • Zinc enrichment in alloy beneath anodic film. • Modified film formed above Mg-Zn-RE second phase. - Abstract: Barrier-type, nanocrystalline anodic films have been formed on a ZE41 magnesium alloy under a constant current density of 5 mA cm −2 in a glycerol/fluoride electrolyte, containing 5 vol.% of added water, at 293 K. The films contain magnesium, fluorine and oxygen as the major species, and lower amounts of alloying element species. The films grow at an efficiency of ∼0.8 to 0.9, with a formation ratio in the range of ∼1.2 to 1.4 nm V −1 at the matrix regions and with a ratio of ∼1.8 nm V −1 at Mg-Zn-RE second phase. At the former regions, rare earth species are enriched at the film surface and zinc is enriched in the alloy. A carbon- and oxygen-rich band within the film suggests that the films grow at the metal/film and film/electrolyte interfaces

To the problem on formation kinetics of absorption and polylayer films in anodic oxidation of cadmium in alkali hydroxides. Kinetics of irreversible absorption of oxide

International Nuclear Information System (INIS)

Grachev, D.K.

1978-01-01

An attempt is made to substantiate the formation of adsorption and polylayer films on cadmium electrode during its oxidation in KOH diluted solutions based on the interpretation of data from methods of the potential control. Using relaxation methods (voltammetry and chronoammetry) the conditions were determined at which irreversible abd sorption kinetics of the passivating oxide turns out to dominate the anodic dissolution process in the KOH 1-0.1 N solutions. Parts of monolayer and polylayer surface filling are shown. Kinetics of monolayer oxide growth is interpreted based on the Temkin-Zeldovich type equation for irreversible adsorption process. Ways of the kinetic equation precision are discussed for its full correspondence with the experiment obtained

Effect of small addition of Mn on the passivation of Zn in 0.1 M NaOH solution

International Nuclear Information System (INIS)

Shang Xiuling; Zhang Bo; Han Enhou; Ke Wei

2011-01-01

The passivation of pure Zn (99.995 wt%) and Zn-0.4Mn (0.4 wt% Mn) alloy in a deaerated 0.1 M NaOH solution (pH 12.9) was investigated by electrochemical measurements, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The potentiodynamic polarization and electrochemical impedance measurements show that addition of 0.4 wt% Mn can decrease the passive current density of Zn in the passive region. XPS surface analysis indicates that there is approximately 1.0-2.0 at% Mn 2+ being incorporated into the passive film on Zn-0.4Mn alloy with Mn content being higher in the outer layers. Mott-Schottky analysis shows that the incorporated Mn can decrease concentration of defects in the film. AFM observations disclose that Mn can decrease the grain size of the film. The mechanism by which Mn additions improve the passivity of Zn is that the incorporated Mn can inhibit ions transportation in the film and inhibit its growth. Meanwhile, Mn can also promote the nucleation of Zn oxides and decrease film porosity.

Development of a passive and remote magnetic microsensor with thin-film giant magnetoimpedance element and surface acoustic wave transponder

KAUST Repository

Al Rowais, Hommood; Li, Bodong; Liang, Cai; Green, Scott Ryan; Gianchandani, Yogesh B.; Kosel, Jü rgen

2011-01-01

This paper presents the development of a wireless magnetic field sensor consisting of a three-layer thin-film giant magnetoimpedance sensor and a surface acoustic wave device on one substrate. The goal of this integration is a passive and remotely interrogated sensor that can be easily mass fabricated using standard microfabrication tools. The design parameters, fabrication process, and a model of the integrated sensor are presented together with experimental results of the sensor. © 2011 American Institute of Physics.

Removal of FePO4 and Fe3(PO4)2 crystals on the surface of passive fillers in Fe0/GAC reactor using the acclimated bacteria

International Nuclear Information System (INIS)

Lai, Bo; Zhou, Yuexi; Yang, Ping; Wang, Juling; Yang, Jinghui; Li, Huiqiang

2012-01-01

Highlights: ► Fe 3 (PO 4 ) 2 and FePO 4 crystals would weaken treatment efficiency of Fe 0 /GAC reactor. ► Fe 3 (PO 4 ) 2 and FePO 4 crystals could be removed by the acclimated bacteria. ► FeS and sulfur in the passive film would be removed by the sulfur-oxidizing bacteria. ► Develop a cost-effective bio-regeneration technology for the passive fillers. - Abstract: As past studies presented, there is obvious defect that the fillers in the Fe 0 /GAC reactor begin to be passive after about 60 d continuous running, although the complicated, toxic and refractory ABS resin wastewater can be pretreated efficiently by the Fe 0 /GAC reactor. During the process, the Fe 3 (PO 4 ) 2 and FePO 4 crystals with high density in the passive film are formed by the reaction between PO 4 3− and Fe 2+ /Fe 3+ . Meanwhile, they obstruct the formation of macroscopic galvanic cells between Fe 0 and GAC, which will lower the wastewater treatment efficiency of Fe 0 /GAC reactor. In this study, in order to remove the Fe 3 (PO 4 ) 2 and FePO 4 crystals on the surface of the passive fillers, the bacteria were acclimated in the passive Fe 0 /GAC reactor. According to the results, it can be concluded that the Fe 3 (PO 4 ) 2 and FePO 4 crystals with high density in the passive film could be decomposed or removed by the joint action between the typical propionic acid type fermentation bacteria and sulfate reducing bacteria (SRB), whereas the PO 4 3− ions from the decomposition of the Fe 3 (PO 4 ) 2 and FePO 4 crystals were released into aqueous solution which would be discharged from the passive Fe 0 /GAC reactor. Furthermore, the remained FeS and sulfur (S) in the passive film also can be decomposed or removed easily by the oxidation of the sulfur-oxidizing bacteria. This study provides some theoretical references for the further study of a cost-effective bio-regeneration technology to solve the passive problems of the fillers in the zero-valent iron (ZVI) or Fe 0 /GAC reactor.

Reversibility of temperature driven discrete layer-by-layer formation of dioctyl-benzothieno-benzothiophene films.

Science.gov (United States)

Dohr, M; Ehmann, H M A; Jones, A O F; Salzmann, I; Shen, Q; Teichert, C; Ruzié, C; Schweicher, G; Geerts, Y H; Resel, R; Sferrazza, M; Werzer, O

2017-03-22

Film forming properties of semiconducting organic molecules comprising alkyl-chains combined with an aromatic unit have a decisive impact on possible applications in organic electronics. In particular, knowledge on the film formation process in terms of wetting or dewetting, and the precise control of these processes, is of high importance. In the present work, the subtle effect of temperature on the morphology and structure of dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) films deposited on silica surfaces by spin coating is investigated in situ via X-ray diffraction techniques and atomic force microscopy. Depending on temperature, bulk C8-BTBT exhibits a crystalline, a smectic A and an isotropic phase. Heating of thin C8-BTBT layers at temperatures below the smectic phase transition temperature leads to a strong dewetting of the films. Upon approaching the smectic phase transition, the molecules start to rewet the surface in the form of discrete monolayers with a defined number of monolayers being present at a given temperature. The wetting process and layer formation is well defined and thermally stable at a given temperature. On cooling the reverse effect is observed and dewetting occurs. This demonstrates the full reversibility of the film formation behavior and reveals that the layering process is defined by an equilibrium thermodynamic state, rather than by kinetic effects.

Formation and characterization of titanium nitride and titanium carbide films prepared by reactive sputtering

International Nuclear Information System (INIS)

Sundgren, J.-E.

1982-01-01

Titanium has been reactively r.f. sputtered in mixed Ar-N 2 and Ar-CH 4 discharges on to substrates held at 775 K. The films obtained have been characterized by scanning electron microscopy, X-ray diffraction and by measurements of hardness and electrical resistivity. The compositions of the films have been determined using Auger electron spectroscopy. The processes occurring both on substrates and target surfaces have been studied and it is shown that the latter is of great importance for the composition and structure of deposited films. Titanium nitride films of full density and with electrical resistivity and hardness values close to those of bulk TiN were only obtained in a narrow range close to the stoichiometric composition. Titanium carbide films grown on non-biased substrates were found to have an open structure and thus a low density. A bias applied to the substrate, however, improved the quality of the films. It is also shown that the heat of formation of the compounds plays an important role in the formation of carbides and nitrides. A large value promotes the development of large grains and dense structures. (Auth.)

A XPS study of the Mo effect on passivation behaviors for highly controlled stainless steels in neutral and alkaline conditions

International Nuclear Information System (INIS)

Mesquita, Thiago J.; Chauveau, Eric; Mantel, Marc; Nogueira, Ricardo P.

2013-01-01

The objective of this work is to study the effect of Mo additions on film passive properties of three different stainless steels (SS) types (austenitic, ferritic and duplex alloys). A comparison between Mo containing (3 wt% Mo) and free Mo (0 wt% Mo) grades of highly controlled laboratory heats was done considering their passive film formed in different aggressive conditions, from neutral to alkaline pH. The presence of oxidized Mo on the passive layer was confirmed by X-ray photoelectron Spectroscopy (XPS). The presence of Mo within the passive film improved the passivity breakdown potential for the duplex and ferritic SS, but seemed to have no effect for austenitic SS.

A XPS study of the Mo effect on passivation behaviors for highly controlled stainless steels in neutral and alkaline conditions

Energy Technology Data Exchange (ETDEWEB)

Mesquita, Thiago J., E-mail: thiago.mesquita@ugitech.com [Ugitech Research Center, Avenue Paul Girod, 73403 Ugine Cedex (France); Chauveau, Eric; Mantel, Marc [Ugitech Research Center, Avenue Paul Girod, 73403 Ugine Cedex (France); Nogueira, Ricardo P. [LEPMI UMR 5279 CNRS – Grenoble INP–Université de Savoie–Université Joseph Fourier BP 75, 38402 St Martin d’Hères (France)

2013-04-01

The objective of this work is to study the effect of Mo additions on film passive properties of three different stainless steels (SS) types (austenitic, ferritic and duplex alloys). A comparison between Mo containing (3 wt% Mo) and free Mo (0 wt% Mo) grades of highly controlled laboratory heats was done considering their passive film formed in different aggressive conditions, from neutral to alkaline pH. The presence of oxidized Mo on the passive layer was confirmed by X-ray photoelectron Spectroscopy (XPS). The presence of Mo within the passive film improved the passivity breakdown potential for the duplex and ferritic SS, but seemed to have no effect for austenitic SS.

Preparation and evaluation of periodontal films based on polyelectrolyte complex formation.

Science.gov (United States)

Kassem, Abeer Ahmed; Ismail, Fatma Ahmed; Naggar, Viviane Fahim; Aboulmagd, Elsayed

2015-05-01

Local intra-pocket drug delivery devices can provide an effective concentration of the antimicrobial agent at the site of action with avoidance of undesirable side effects. This study explored the application of chitosan-alginate and chitosan-pectin polyelectrolyte complex (PEC) films as drug release regulators for tetracycline HCl (Tc) to treat periodontal pockets. Periodontal films with 1:1 Tc:PEC ratio were prepared using 1:1 chitosan (Ch) to sodium alginate (A) or 1:3 Ch to pectin (P). The scanning electron microscope showed acceptable film appearance and differential scanning calorimetry analysis confirmed complex formation. The in vitro release studies for both films showed a burst drug release, followed by prolonged release for 70 h. A prolonged antibacterial activity of both films against Staphylococcus aureus ATCC 6538 was observed over a period of 21 days. Aging studies indicated that the five months storage period in freezer did not significantly influence the drug release profile or the antibacterial activity of both films. Clinical evaluation showed a significant reduction in pocket depth (p < 0.0001) to their normal values (≤3 mm). PEC films could be exploited as a prolonged drug release devices for treatment of periodontal pockets.

Influence of additives on melt viscosity, surface tension, and film formation of dry powder coatings.

Science.gov (United States)

Sauer, Dorothea; McGinity, James W

2009-06-01

Limited information on thermally cured dry-powder coatings used for solid dosage forms has been available in the literature. The aim of this study was to characterize the film formation process of Eudragit L 100-55 dry-powder coatings and to investigate the influence of film additives on melt viscosity and surface tension. The coating process employed no liquids and the plasticizer was combined with the polymer using hot melt extrusion. Thermoanalytical methods including differential scanning calorimetry and thermogravimetric analysis (TGA) were used to investigate the thermal properties of the dry-coating formulations. The rheological behavior of the coating formulations were characterized with the extrusion torque, and the surface energy parameters were determined from contact angle measurements. The influence of the level of triethyl citrate (TEC) as plasticizer and polyethylene glycol (PEG) 3350 in the polymer film on film formation was investigated using a digital force tester. TGA confirmed thermal stability of all coating excipients at the investigated curing conditions. Increasing TEC levels and the addition of PEG 3350 as a low melting excipient in the coating reduced the viscosity of the polymer. Plasticization of the polymer with TEC increased the surface free energy, whereas the admixture of 10% PEG 3350 did not affect the surface free energy of Eudragit L 100-55. The spreading coefficient of the polymers over two sample tablet formulations was reduced with increasing surface free energy. During the curing process, puncture strength, and elongation of powder-cast films increased. The effect of curing time on the mechanical properties was dependent on the plasticizer content. The incorporation of TEC and PEG 3350 into the Eudragit L 100-55 powder coating formulation improved film formation. Mechanical testing of powder-cast films showed an increase of both elongation and puncture strength over the curing process as criterion for polymer particle fusion

Surface protection during plasma hydrogenation for acceptor passivation in InP

International Nuclear Information System (INIS)

Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

1990-01-01

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

Passivation of high temperature superconductors

Science.gov (United States)

Vasquez, Richard P. (Inventor)

1991-01-01

The surface of high temperature superconductors such as YBa2Cu3O(7-x) are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10(exp -3) M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

Spontaneous nano-gap formation in Ag film using NaCl sacrificial layer for Raman enhancement

Science.gov (United States)

Min, Kyungchan; Jeon, Wook Jin; Kim, Youngho; Choi, Jae-Young; Yu, Hak Ki

2018-03-01

We report the method of fabrication of nano-gaps (known as hot spots) in Ag thin film using a sodium chloride (NaCl) sacrificial layer for Raman enhancement. The Ag thin film (20-50 nm) on the NaCl sacrificial layer undergoes an interfacial reaction due to the AgCl formed at the interface during water molecule intercalation. The intercalated water molecules can dissolve the NaCl molecules at interfaces and form the ionic state of Na+ and Cl-, promoting the AgCl formation. The Ag atoms can migrate by the driving force of this interfacial reaction, resulting in the formation of nano-size gaps in the film. The surface-enhanced Raman scattering activity of Ag films with nano-size gaps has been investigated using Raman reporter molecules, Rhodamine 6G (R6G).

Numerical studies of film formation in context of steel coating

Science.gov (United States)

Aniszewski, Wojciech; Zaleski, Stephane; Popinet, Stephane

2017-11-01

In this work, we present a detailed example of numerical study of film formation in the context of metal coating. Liquid metal is drawn from a reservoir onto a retracting solid sheet, forming a coating film characterized by phenomena such as longitudinal thickness variation (in 3D) or waves akin to that predicted by Kapitza and Kapitza (visible in two dimensions as well). While the industry standard configuration for Zinc coating is marked by coexistence of medium Capillary number (Ca = 0.03) and film Reynolds number above 1000, we present also parametric studies in order to establish more clearly to what degree does the numerical method influence film regimes obtained in the target configuration. The simulations have been performed using Basilisk, a grid-adapting, strongly optimized code derived from Gerris . Mesh adaptation allows for arbitrary precision in relevant regions such as the contact line or the meniscus, while a coarse grid is applied elsewhere. This adaptation strategy, as the results indicate, is the only realistic approach for numerical method to cover the wide range of necessary scales from the predicted film thickness (hundreds of microns) to the domain size (meters).

An ultrathin polymer coating of carboxylate self-assembled monolayer adsorbed on passivated iron to prevent iron corrosion in 0.1 M Na2SO4

International Nuclear Information System (INIS)

Aramaki, Kunitsugu; Shimura, Tadashi

2010-01-01

For preparing an ultrathin two-dimensional polymer coating adsorbed on passivated iron, a 16-hydroxyhexadecanoate ion HO(CH 2 ) 15 CO 2 - self-assembled monolayer (SAM) was modified with 1,2-bis(triethoxysilyl)ethane (C 2 H 5 O) 3 Si(CH 2 ) 2 Si(OC 2 H 5 ) 3 and octadecyltriethoxysilane C 18 H 37 Si(OC 2 H 5 ) 3 . Protection of passivated iron against passive film breakdown and corrosion of iron was investigated by monitoring of the open-circuit potential and repeated polarization measurements in an aerated 0.1 M Na 2 SO 4 solution during immersion for many hours. The time required for passive film breakdown of the polymer-coated electrode was markedly higher in this solution than that of the passivated one, indicating protection of the passive film from breakdown by coverage with the polymer coating. The protective efficiencies of the passive film covered with the coating were extremely high, more than 99.9% in 0.1 M Na 2 SO 4 before the passive film was broken down, showing prominent cooperative suppression of iron corrosion in the solution by coverage with the passive film and polymer coating. The polymer-coated surface was characterized by contact angle measurement and electron-probe microanalysis (EPMA). Prevention of passive film breakdown and iron corrosion for the polymer-coated electrode healed in 0.1 M NaNO 3 was also examined in 0.1 M Na 2 SO 4 .

Combinatorial Study of Surface Pattern Formation in Thin Block Copolymer Films

International Nuclear Information System (INIS)

Smith, Archie P.; Douglas, Jack F.; Meredith, J. Carson; Amis, Eric J.; Karim, Alamgir

2001-01-01

Surface pattern formation in diblock copolymer films is investigated as a function of film thickness h and molecular mass M . Smooth films are observed for certain h ranges centered about multiples of the lamellar thickness L 0 , and we attribute this effect to an increase in the surface chain density with h in the outer brushlike copolymer layer. We also observe apparently stable labyrinthine surface patterns for other h ranges, and the average size of these patterns is found to scale as λ∼L -2.5 0 . Hole and island patterns occur for h ranges between those of the labyrinthine patterns and the smooth regions, and their size similarly decreases with L 0 and M

Passivation behaviour of stainless steel (UNS N-08028) in industrial or simplified phosphoric acid solutions at different temperatures

International Nuclear Information System (INIS)

Ben Salah, M.; Sabot, R.; Refait, Ph.; Liascukiene, I.; Méthivier, C.; Landoulsi, J.; Dhouibi, L.

2015-01-01

Highlights: • Industrial phosphoric acid is less aggressive than simulated industrial acid. • Polyphosphate film in Industrial acid is reinforced by calcium and sulfate. • Passive film thickness is obtained by the power law model from EIS measurements. • Passive film of Sanicro28 becomes more resistive towards corrosion with exposure time in industrial acid. • XPS measurements coupled to Raman spectroscopy reveal the corrosion products formed in simulated acid. - Abstract: The corrosion behaviour of Sanicro28, in industrial phosphoric acid and simplified solution of pure H_3PO_4 containing sulphates and chlorides, is investigated during 48 h between 20 and 80 °C. Results show higher corrosion resistance in the industrial medium. Film thickness evaluated by EIS remains constant in industrial acid due to polyphosphate that promotes crystallisation of the Cr_2O_3 inner layer. Conversely, the passive film is partially destroyed at 80 °C in simplified acid. XPS and Raman analysis show that phosphate and molybdenum are both present in the passive film and in corrosion products. The role of Ca present in the industrial acid is discussed.

Semiconducting properties of oxide films formed onto an Nb electrode in NaOH solutions

Directory of Open Access Journals (Sweden)

VLADIMIR D. JOVIC

2008-03-01

Full Text Available In this paper, the results of the potentiostatic formation of homogeneous and heterogeneous, nano-crystalline passive films of Nb2O5 onto an Nb electrode in NaOH solutions of different concentrations at potentials lower than 3.0 V vs. SCE are presented. The semiconducting properties of such films were investigated by EIS measurements. After fitting the EIS results by appropriate equivalent circuits, the space charge capacitance (Csc and space charge resistance (Rsc of these films were determined. The donor density (Nsc, flat band potential (Efb and thickness of the space charge layer (dsc for such oxide films were determined from the corresponding Mott–Schottky (M–S plots. It is shown that all oxide films were n-type semiconductors in a certain potential range.

Structural characterization and properties of lanthanum film as chromate replacement for tinplate

International Nuclear Information System (INIS)

Huang Xingqiao; Li Ning

2007-01-01

Sulfide-stain resistance of La-passivated, unpassivated and Cr-passivated tinplate was measured using a cysteine tarnish test. Corrosion behavior of these tinplates was investigated using electrochemical impedance spectroscopy (EIS) measurement. The morphology, composition and thickness of lanthanum film were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and X-ray fluorescence spectrometry (XRF), respectively. La-passivation treatment remarkably enhances sulfide-stain resistance of tinplate, and sulfide-stain resistance of La-passivated tinplate is slightly higher than that of Cr-passivated tinplate. La-passivation treatment also significantly improves corrosion protection property of tinplate. In contact with 3.5% NaCl solution, corrosion resistance of La-passivated tinplate is close to that of Cr-passivated tinplate, and in contact with 0.1 M citric-citrate buffer solution, corrosion resistance of La-passivated tinplate is higher than that of Cr-passivated tinplate. Lanthanum film is composed of spherical particles about 50-1000 nm in diameter, while most part of tinplate's surface is covered with the small particles about 50-200 nm. The film mainly consists of lanthanum and oxygen, which mainly exist as La 2 O 3 and its hydrates such as La(OH) 3 and LaOOH. The amount of lanthanum in the film is about 0.0409 g/m 2

Mechanism of manganese (mono and di) telluride thin-film formation and properties

Science.gov (United States)

Sharma, Raj Kishore; Singh, Gurmeet; Shul, Yong Gun; Kim, Hansung

2007-03-01

Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO 4 and TeO 2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn 2+, Te 4+ and combined Mn 2+ and Te 4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

Formation of hydrated layers in PMMA thin films in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Akers, Peter W. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); Nelson, Andrew R.J. [The Bragg Institute, Australian Nuclear Science and Technology Organisation, Menai, NSW (Australia); Williams, David E. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand); McGillivray, Duncan J., E-mail: d.mcgillivray@auckland.ac.nz [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand)

2015-10-30

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Formation of hydrated layers in PMMA thin films in aqueous solution

International Nuclear Information System (INIS)

Akers, Peter W.; Nelson, Andrew R.J.; Williams, David E.; McGillivray, Duncan J.

2015-01-01

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Thin film-based optically variable security devices: From passive to active

Science.gov (United States)

Baloukas, Bill

Counterfeiting costs the world economy billions of dollars every year. Aside from financial losses, counterfeiting also poses a great threat to the public's safety, for example through the existence of counterfeit passports (terrorism), pharmaceutical products (health hazards) and even airplane parts (safety issues). Optical security devices (OSDs) have therefore played a critical role in the fight against counterfeiting. It is the aim of the present thesis to show that through the use of metamerism and electrochromic materials, new types of active security devices with interesting features can be created; indeed, most present-day devices are passive in nature. I first demonstrate that the addition of metamerism in the design of interference filters can result in innovative features. Different structures which can be used in transmission and/or in reflection are designed, fabricated, and evaluated. The first structures which are presented here are based on a combination of two different metameric interference filters. Possessing widely different transmission spectra, these filters also offer different angular color shifts and, as a result, offer an opportunity of creating hidden image effects. Despite their interesting properties, such metameric devices are shown to be highly illuminant and observer sensitive; that is the color match is lost under most observation conditions. These issues are solved by a simpler structure based on the juxtaposition of an interference filter and a non-iridescent colored material. Throughout this study, I present the design approach, analyze the filters' sensitivity to deposition errors, and evaluate the performance of prototype devices prepared by dual ion beam sputtering. Following my work on passive metameric systems, I then propose to go one step further by implementing an active component using an electrochromic material. This novel concept, which is based on the joint use of a metameric filter and electrochromic device, offers

Dewetting dynamics of a gold film on graphene: implications for nanoparticle formation.

Science.gov (United States)

Namsani, Sadanandam; Singh, Jayant K

2016-01-01

The dynamics of dewetting of gold films on graphene surfaces is investigated using molecular dynamics simulation. The effect of temperature (973-1533 K), film diameter (30-40 nm) and film thickness (0.5-3 nm) on the dewetting mechanism, leading to the formation of nanoparticles, is reported. The dewetting behavior for films ≤5 Å is in contrast to the behavior seen for thicker films. The retraction velocity, in the order of ∼300 m s(-1) for a 1 nm film, decreases with an increase in film thickness, whereas it increases with temperature. However at no point do nanoparticles detach from the surface within the temperature range considered in this work. We further investigated the self-assembly behavior of nanoparticles on graphene at different temperatures (673-1073 K). The process of self-assembly of gold nanoparticles is favorable at lower temperatures than at higher temperatures, based on the free-energy landscape analysis. Furthermore, the shape of an assembled structure is found to change from spherical to hexagonal, with a marked propensity towards an icosahedral structure based on the bond-orientational order parameters.

Modeling of metastable phase formation diagrams for sputtered thin films.

Science.gov (United States)

Chang, Keke; Music, Denis; To Baben, Moritz; Lange, Dennis; Bolvardi, Hamid; Schneider, Jochen M

2016-01-01

A method to model the metastable phase formation in the Cu-W system based on the critical surface diffusion distance has been developed. The driver for the formation of a second phase is the critical diffusion distance which is dependent on the solubility of W in Cu and on the solubility of Cu in W. Based on comparative theoretical and experimental data, we can describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation. Metastable phase formation diagrams for Cu-W and Cu-V thin films are predicted and validated by combinatorial magnetron sputtering experiments. The correlative experimental and theoretical research strategy adopted here enables us to efficiently describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation during magnetron sputtering.

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

International Nuclear Information System (INIS)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-01-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

Formation of SiNx:H by PECVD: optimization of the optical, bulk passivation and structural properties for photovoltaic applications

International Nuclear Information System (INIS)

Lelievre, J.F.

2007-04-01

The hydrogenated silicon nitride SiNx:H is widely used as antireflection coating and passivation layer in the manufacture of silicon photovoltaic cells. The aim of this work was to implement a low frequency (440 kHz) PECVD reactor and to characterize the obtained SiN layers. After having determined the parameters of the optimal deposition, the physico-chemical structure of the layers has been studied. The optical properties have been studied with the aim to improve the antireflection coating of the photovoltaic cells. The surface and bulk passivation properties, induced by the SiN layer in terms of its stoichiometry, have been analyzed and have revealed the excellent passivating efficiency of this material. At last, have been studied the formation conditions of the silicon nano-crystals in the SiN matrix. (O.M.)

Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

International Nuclear Information System (INIS)

Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

2014-01-01

Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

Micro-fabrication technology for piezoelectric film formation and its application to MEMS

OpenAIRE

一木, 正聡; 曹, 俊杰; 張, 麓〓; 王, 占杰; 前田, 龍太郎; Masaaki, ICHIKI; Jiunn Jye, TSAUR; Lulu, ZHANG; Zhang Jie, WANG; Ryutaro, MAEDA; 産業技術総合研究所; 産業技術総合研究所; 産業技術総合研究所; 東北大学; 産業技術総合研究所

2005-01-01

Technological problems for realization of Micro Electro-mechanical System (MEMS) are discussed and an introduction of smart materials (PZT) is encouraged. The film formation and micromaching technology are discussed in integration of PZT thin films into MEMS. Further developments are proposed on PZT micro sensors and actuators with special emphasis laid on exploration of new application fields of MEMS, such as scanning mirror. Internal stress is estimated and analyzed for the improvement of d...

Uncovering the Fundamental Nature of Tribological Interfaces: High-Resolution Tribology and Spectroscopy of Ultrahard Nanostructured Diamond Films for MEMS and Beyond

National Research Council Canada - National Science Library

Carpick, Robert W; Gilbert, P. U; Sumant, Anirudha V

2007-01-01

.... The new insights include the paradigm-shifting demonstration that the low friction of diamond films is not due to the formation of graphite at the sliding interface as widely thought, but rather due to the passivation of dangling bonds by dissociative adsorption of species such as water.

Mechanism of multisoliton formation and soliton energy quantization in passively mode-locked fiber lasers

International Nuclear Information System (INIS)

Tang, D.Y.; Zhao, L.M.; Zhao, B.; Liu, A.Q.

2005-01-01

We report results of numerical simulations on multiple-soliton generation and soliton energy quantization in a soliton fiber ring laser passively mode locked by using the nonlinear polarization rotation technique. We found numerically that the formation of multiple solitons in the laser is caused by a peak-power-limiting effect of the laser cavity. It is also the same effect that suppresses the soliton pulse collapse, an intrinsic feature of solitons propagating in gain media, and makes the solitons stable in the laser. Furthermore, we show that the soliton energy quantization observed in the lasers is a natural consequence of the gain competition between the multiple solitons. Enlightened by the numerical result we speculate that multisoliton formation and soliton energy quantization observed in other types of soliton fiber lasers could have a similar mechanism

Dewetting and nanopattern formation of thin Pt films on SiO2 induced by ion beam irradiation

International Nuclear Information System (INIS)

Hu, Xiaoyuan; Cahill, David G.; Averback, Robert S.

2001-01-01

Dewetting and nanopattern formation of 3 - 10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr + at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3 - 10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr + and Ar + irradiation and 19.5keVHe + , Ar + , Kr + , and Xe + irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5keVXe + irradiation. [copyright] 2001 American Institute of Physics

Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation.

Science.gov (United States)

Choi, Seungbeom; Jo, Jeong-Wan; Kim, Jaeyoung; Song, Seungho; Kim, Jaekyun; Park, Sung Kyu; Kim, Yong-Hoon

2017-08-09

Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (ε ∼ 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (∼44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.

Formation factor of regular porous pattern in poly-α-methylstyrene film

International Nuclear Information System (INIS)

Yang Ruizhuang; Xu Jiajing; Gao Cong; Ma Shuang; Chen Sufen; Luo Xuan; Fang Yu; Li Bo

2015-01-01

Regular poly-α-methylstyrene (PAMS) porous film with macron-sized cells was prepared by casting the solution in the condition with high humidity. In this paper, the effects of the molecular weight of PAMS, PAMS concentration, humidity, temperature, volatile solvents and the thickness of liquid of solution on formation of regular porous pattern in PAMS film were discussed. The results show that these factors significantly affect the pore size and the pore distribution. The capillary force and Benard-Marangoni convection are main driving forces for the water droplet moving and making pores regular arrangement. (authors)

Formation of mixed and patterned self-assembled films of alkylphosphonates on commercially pure titanium surfaces

Energy Technology Data Exchange (ETDEWEB)

Rudzka, Katarzyna; Sanchez Treviño, Alda Y.; Rodríguez-Valverde, Miguel A., E-mail: marodri@ugr.es; Cabrerizo-Vílchez, Miguel A.

2016-12-15

Highlights: • Chemically-tailored titanium surfaces were prepared by self-assembly of alkylphosphonates. • Mixed self-assembled films were prepared with aqueous mixtures of two alkylphosphonates. • Single self-assembled films were altered by laser abrasion. • Mixed and patterned self-assembled films on titanium may guide the bone-like formation. - Abstract: Titanium is extensively employed in biomedical devices, in particular as implant. The self-assembly of alkylphosphonates on titanium surfaces enable the specific adsorption of biomolecules to adapt the implant response against external stimuli. In this work, chemically-tailored cpTi surfaces were prepared by self-assembly of alkylphosphonate molecules. By bringing together attributes of two grafting molecules, aqueous mixtures of two alkylphosphonates were used to obtain mixed self-assembled films. Single self-assembled films were also altered by laser abrasion to produce chemically patterned cpTi surfaces. Both mixed and patterned self-assembled films were confirmed by AFM, ESEM and X-ray photoelectron spectroscopy. Water contact angle measurements also revealed the composition of the self-assembly films. Chemical functionalization with two grafting phosphonate molecules and laser surface engineering may be combined to guide the bone-like formation on cpTi, and the future biological response in the host.

Hexamethylenetetramine-mediated growth of grain-boundary-passivation CH3NH3PbI3 for highly reproducible and stable perovskite solar cells

Science.gov (United States)

Zheng, Yan-Zhen; Li, Xi-Tao; Zhao, Er-Fei; Lv, Xin-Ding; Meng, Fan-Li; Peng, Chao; Lai, Xue-Sen; Huang, Meilan; Cao, Guozhong; Tao, Xia; Chen, Jian-Feng

2018-02-01

Simultaneously achieving the long-term device stability and reproducibility has proven challenging in perovskite solar cells because solution-processing produced perovskite film with grain boundary is sensitive to moisture. Herein, we develop a hexamethylenetetramine (HMTA)-mediated one-step solution-processing deposition strategy that leads to the formation of high-purity and grain-boundary-passivation CH3NH3PbI3 film and thereby advances cell optoelectronic performance. Through morphological and structural characterizations and theoretical calculations, we demonstrate that HMTA fully occupies the moisture-exposed surface to build a bridge across grain boundary and coordinates with Pb ions to inhibit the formation of detrimental PbI2. Such HMTA-mediated grown CH3NH3PbI3 films achieves a decent augmentation of power conversion efficiency (PCE) from 12.70% to 17.87%. A full coverage of PbI2-free CH3NH3PbI3 surface on ZnO also boosts the device's stability and reproducibility.

A film model for heat and mass transfer with fog formation

NARCIS (Netherlands)

Brouwers, Jos

1992-01-01

An analysis is presented of a binary film with fog formation and a negligible induced velocity (traditionally referred to as “Stefan—Nusselt flow”). The governing equations of energy diffusion, coupled with the saturation condition, are solved and analytical correction factors are derived.

Formation of Defect-Free Latex Films on Porous Fiber Supports

KAUST Repository

Lively, Ryan P.

2011-09-28

We present here the creation of a defect-free polyvinylidene chloride barrier layer on the lumen-side of a hollow fiber sorbent. Hollow fiber sorbents have previously been shown to be promising materials for enabling low-cost CO 2 capture, provided a defect-free lumen-side barrier layer can be created. Film experiments examined the effect of drying rate, latex age, substrate porosity (porous vs nonporous), and substrate hydrophobicity/ hydrophilicity. Film studies show that in ideal conditions (i.e., slow drying, fresh latex, and smooth nonporous substrate), a defect-free film can be formed, whereas the other permutations of the variables investigated led to defective films. These results were extended to hollow fiber sorbents, and despite using fresh latex and relatively slow drying conditions, a defective lumen-side layer resulted. XRD and DSC indicate that polyvinylidene chloride latex develops crystallinity over time, thereby inhibiting proper film formation as confirmed by SEM and gas permeation. This and other key additional challenges associated with the porous hollow fiber substrate vs the nonporous flat substrate were overcome. By employing a toluene-vapor saturated drying gas (a swelling solvent for polyvinylidene chloride) a defect-free lumen-side barrier layer was created, as investigated by gas and water vapor permeation. © 2011 American Chemical Society.

Controllable self-induced passivation of hybrid lead iodide perovskites toward high performance solar cells.

Science.gov (United States)

Chen, Qi; Zhou, Huanping; Song, Tze-Bin; Luo, Song; Hong, Ziruo; Duan, Hsin-Sheng; Dou, Letian; Liu, Yongsheng; Yang, Yang

2014-07-09

To improve the performance of the polycrystalline thin film devices, it requires a delicate control of its grain structures. As one of the most promising candidates among current thin film photovoltaic techniques, the organic/inorganic hybrid perovskites generally inherit polycrystalline nature and exhibit compositional/structural dependence in regard to their optoelectronic properties. Here, we demonstrate a controllable passivation technique for perovskite films, which enables their compositional change, and allows substantial enhancement in corresponding device performance. By releasing the organic species during annealing, PbI2 phase is presented in perovskite grain boundaries and at the relevant interfaces. The consequent passivation effects and underlying mechanisms are investigated with complementary characterizations, including scanning electron microscopy (SEM), X-ray diffraction (XRD), time-resolved photoluminescence decay (TRPL), scanning Kelvin probe microscopy (SKPM), and ultraviolet photoemission spectroscopy (UPS). This controllable self-induced passivation technique represents an important step to understand the polycrystalline nature of hybrid perovskite thin films and contributes to the development of perovskite solar cells judiciously.

Electropotential measurements of passivation and corrosion of steel coupons

International Nuclear Information System (INIS)

Petit, G.S.; Wright, R.R.

1977-02-01

There is considerable interest at the Oak Ridge Gaseous Diffusion Plant (ORGDP) in the preparation of mild steel to resist corrosion (passivation) both in moist air and uranium hexafluoride (UF 6 ) environments. Steel prepared by the usual procedures to prevent rusting, such as oiling, plastic coating, painting, or phosphating, cannot be used in the presence of UF 6 . Tests have shown that a chromate treatment or an ammoniacal citrate treatment for passivation are effective. The electropotential behavior of these two passivation treatments is described. The initial electropotential measurement, when compared to that of an unpassivated coupon, gives the electropotential degree in volts of passivation. Continual exposure in the test, when compared to the unpassivated coupon, gives a profile of the durability of the passivation film. The chromate passivation treatment was slightly superior to the citrate passivation

Formation of nano-sized pinholes array in thin Ni film on MgO(100) substrate

Energy Technology Data Exchange (ETDEWEB)

Lin Chuan; Naramoto, Hiroshi; Xu Yonghua; Kitazawa, Sin-iti; Narumi, Kazumasa; Sakai, Seiji

2003-10-22

We have grown thin Ni films with various thicknesses on polished MgO(100) single crystal substrates in an e-gun evaporation system. The morphology of the as-deposited films was characterized with atomic force microscopy. Pinholes with average diameter of 5-10 nm are found in the film with thickness from 1 to 15 nm, and pinholes array was observed in the film 10 nm thick. The origin of such structure formation is discussed in terms of the elastic strain energy.

Role of bond adaptability in the passivation of colloidal quantum dot solids

KAUST Repository

Thon, Susanna; Ip, Alex; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W.; Carey, Graham H.; Masala, Silvia; Sargent, E. H.

2013-01-01

. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority

THE FORMATION AND CHARACTERIZATION OF SUSTAINABLE LAYERED FILMS INCORPORATING MICROFIBRILLATED CELLULOSE (MFC)

OpenAIRE

Galina Rodionova,; Solenne Roudot; , Øyvind Eriksen,; Ferdinand Männle,; Øyvind Gregersen

2012-01-01

Microfibrillated cellulose (MFC), TEMPO-pretreated MFC, and hybrid polymer/MFC mix were used for the production of layered films with interesting properties for application in food packaging. The series of samples were prepared from MFC (base layers) using a dispersion-casting method. The same procedure as well as a bar coating technique was applied to form top layers of different basis weights. The barrier properties and formation of the layered films were investigated in relationship to the...

Colloidal-quantum-dot photovoltaics using atomic-ligand passivation

KAUST Repository

Tang, Jiang

2011-09-18

Colloidal-quantum-dot (CQD) optoelectronics offer a compelling combination of solution processing and spectral tunability through quantum size effects. So far, CQD solar cells have relied on the use of organic ligands to passivate the surface of the semiconductor nanoparticles. Although inorganic metal chalcogenide ligands have led to record electronic transport parameters in CQD films, no photovoltaic device has been reported based on such compounds. Here we establish an atomic ligand strategy that makes use of monovalent halide anions to enhance electronic transport and successfully passivate surface defects in PbS CQD films. Both time-resolved infrared spectroscopy and transient device characterization indicate that the scheme leads to a shallower trap state distribution than the best organic ligands. Solar cells fabricated following this strategy show up to 6% solar AM1.5G power-conversion efficiency. The CQD films are deposited at room temperature and under ambient atmosphere, rendering the process amenable to low-cost, roll-by-roll fabrication. © 2011 Macmillan Publishers Limited. All rights reserved.

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

2015-11-25

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

Characterization of electron beam evaporated carbon films and compound formation on titanium and silicon

International Nuclear Information System (INIS)

Luthin, J.; Linsmeier, C.

2001-01-01

The formation of carbon-based mixed materials is unavoidable on the plasma-facing components (e.g. first wall and divertor) of fusion devices when carbon is used together with other materials. On the surfaces of these components very different conditions with respect to particle and energy impact occur. To predict the mixed material formation under these conditions the precise knowledge of the fundamental mechanisms governing these interactions is essential. In this paper we present the results of carbon interaction with titanium and silicon, as model substances for metallic and covalent carbides, during thermal treatment. To perform basic studies of the reactions of carbon with different elements, thin carbon films are produced by electron beam evaporation on the different substrates under UHV conditions. All measurements for chemical analysis are performed using X-ray photoelectron spectroscopy (XPS). We discuss first the properties of the deposited carbon films. The carbon films are characterized on inert gold surfaces and are compared to bulk graphite. Annealing of the carbon films up to 970 K leads to a transition from a disordered carbon network into a graphitic structure. Preparation of carbon films at room temperature on titanium or silicon leads to a limited carbide formation at the carbon/substrate interface. Carbon deposited in excess of several monolayers is present in elementary form. Annealing of the samples leads to complete carbidization consuming the available carbon in both cases. Titanium reacts to TiC and additional substoichiometric carbide, silicon forms SiC with exact stoichiometry. (orig.)

Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

International Nuclear Information System (INIS)

Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

2012-01-01

Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

International Nuclear Information System (INIS)

Lin, Meng-Yu; Lee, Si-Chen; Lin, Shih-Yen; Wang, Cheng-Hung; Chang, Shu-Wei

2015-01-01

In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors. (paper)

Porous anodic film formation on an Al-3.5 wt% Cu alloy

Energy Technology Data Exchange (ETDEWEB)

Paez, M.A.; Bustos, O.; Thompson, G.E.; Skeldon, P.; Shimizu, K.; Wood, G.C.

2000-03-01

Anodic film growth has been undertaken on an electropolished Al-3.5 wt % Cu alloy to determine the influence of copper in solid solution on the anodizing behavior. At the commencement of anodizing of the electropolished alloy, in the presence of interfacial enrichment of copper, Al{sup 3+} and Cu{sup 2+} ions egress and O{sup 2{minus}} ion ingress proceed; film growth occurs at the alloy/film interface though O{sup 2{minus}} ion ingress, with outwardly mobile Al{sup 3+} and Cu{sup 2+} ions ejected at the film/electrolyte interface, and field-assisted dissolution proceeding at the bases of pores. Oxidation of copper, in the presence of the enriched layer, is also associated with O{sub 2} gas generation, leading to development of oxygen-filled voids. As a result of significant pressures in the voids, film rupture proceeds, with electrolyte access to the alloy, dissolution of the enriched interfacial layer and re-anodizing. The consequence of such processes in the development of anodic films of increased porosity and reduced efficiency of film formation compared with anodizing of superpure aluminum under similar conditions.

Improved interface properties of atomic-layer-deposited HfO{sub 2} film on InP using interface sulfur passivation with H{sub 2}S pre-deposition annealing

Energy Technology Data Exchange (ETDEWEB)

Jin, Hyun Soo [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin [Inorganic Material Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Sang-Moon [Process Development Team, Semiconductor R& D Center, Samsung Electronics Co. Ltd, Hwasung 445-701 (Korea, Republic of); Park, Jong-Bong; Yun, Dong-Jin [Analytical Engineering Group, Platform Technology Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

2015-12-01

Highlights: • ALD HfO{sub 2} films were grown on InP for III–V compound-semiconductor-based devices. • S passivation was performed with (NH{sub 4}){sub 2}S solution and annealing under a H{sub 2}S atmosphere. • The H{sub 2}S annealing provided similar S profiles at the interface without surface damage. • The H{sub 2}S annealing was more effective to suppress interface state density due to thermal energy. - Abstract: Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H{sub 2}S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO{sub 2} film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH{sub 4}){sub 2}S solution treatment. The H{sub 2}S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH{sub 4}){sub 2}S solution treatment, although S profiles at the interface of HfO{sub 2}/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H{sub 2}S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H{sub 2}S annealing.

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Effect of gamma-irradiation of bovine serum albumin solution on the formation of zigzag film textures

Science.gov (United States)

Glibitskiy, Dmitriy M.; Gorobchenko, Olga A.; Nikolov, Oleg T.; Cheipesh, Tatiana A.; Roshal, Alexander D.; Zibarov, Artem M.; Shestopalova, Anna V.; Semenov, Mikhail A.; Glibitskiy, Gennadiy M.

2018-03-01

Formation of patterns on the surface of dried films of saline biopolymer solutions is influenced by many factors, including particle size and structure. Proteins may be modified under the influence of ionizing radiation. By irradiating protein solutions with gamma rays, it is possible to affect the formation of zigzag (Z) structures on the film surface. In our study, the films were obtained by desiccation of bovine serum albumin (BSA) solutions, which were irradiated by a 60Co gamma-source at doses ranging from 1 Gy to 12 kGy. The analysis of the resulting textures on the surface of the films was carried out by calculating the specific length of Z-structures. The results are compared against the absorption and fluorescence spectroscopy and dynamic light scattering (DLS) data. Gamma-irradiation of BSA solutions in the 1-200 Gy range practically does not influence the amount of Z-structures on the film surface. The decrease in fluorescence intensity and increase in absorbance intensity point to the destruction of BSA structure at 2 and 12 kGy, and DLS shows a more than 160% increase in particle size as a result of BSA aggregation at 2 kGy. This prevents the formation of Z-structures, which is reflected in the decrease of their specific length.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

International Nuclear Information System (INIS)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-01-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

Energy Technology Data Exchange (ETDEWEB)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-04-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla, Sweden and Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden); Sterner, Jan [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla (Sweden); Platzer-Björkman, Charlotte [Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden)

2015-11-15

Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device. Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.

Qademah Fault Passive Data

KAUST Repository

Hanafy, Sherif M.

2014-01-01

OBJECTIVE: In this field trip we collect passive data to 1. Convert passive to surface waves 2. Locate Qademah fault using surface wave migration INTRODUCTION: In this field trip we collected passive data for several days. This data will be used to find the surface waves using interferometry and then compared to active-source seismic data collected at the same location. A total of 288 receivers are used. A 3D layout with 5 m inline intervals and 10 m cross line intervals is used, where we used 12 lines with 24 receivers at each line. You will need to download the file (rec_times.mat), it contains important information about 1. Field record no 2. Record day 3. Record month 4. Record hour 5. Record minute 6. Record second 7. Record length P.S. 1. All files are converted from original format (SEG-2) to matlab format P.S. 2. Overlaps between records (10 to 1.5 sec.) are already removed from these files

Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Wang, Ying; Medwal, Rohit; Sehdev, Neeru; Yadian, Boluo; Tan, T.L.; Lee, P.; Talebitaher, A.; Ilyas, Usman; Ramanujan, R.V.; Huang, Yizhong; Rawat, R.S.

2014-01-01

The formation of impurity phases in FePt thin films severely degrades its magnetic properties. The X-ray diffraction patterns of FePt thin films, synthesized using pulsed laser deposition (PLD), showed peaks corresponding to impurity phases, resulting in softer magnetic properties. A systematic investigation was carried to determine the factors that might have led to impurity phase formation. The factors include (i) PLD target composition, (ii) substrate material, (iii) annealing parameters such as temperature, duration and ambience and (iv) PLD deposition parameters such as chamber ambience, laser energy fluence and target–substrate distance. Depositions on the different substrates revealed impurity phase formation only on Si substrates. It was found that the target composition, PLD chamber ambience, and annealing ambience were not the factors that caused the impurity phase formation. The annealing temperature and duration influenced the impurity phases, but are not the cause of their formation. A decrease in the laser energy fluence and increase of the target–substrate distance resulted in elimination of the impurity phases and enhancement in the magnetic and structural properties of FePt thin films. The energy of the ablated plasma species, controlled by the laser energy fluence and the target–substrate distance, is found to be the main factor responsible for the formation of the impurity phases.

«The cultural rucksack»: passive presence or active formation?

Directory of Open Access Journals (Sweden)

Kristin Helene Oftedal

2012-10-01

Full Text Available Based on the experiences from ”Den kulturelle skolesekken” (The cultural rucksack – a national effort which ensures that every pupil in Norway gets the opportunity to experience professional art and culture of various kinds – this article takes a closer look at art as aesthetic experience. Based on texts by the philosophers Jacques Rancière and John Dewey, the article examines the educational potential of aesthetic experience as reception. From a political and, respectively, an evolutionary perspective, both Rancière and Dewey emphasize the aesthetic experience as an inner activity which is both creative and critical. The art experience is characterized not only as harmonious moments, but also as a process involving a certain tension due to the reconstruction and interpretation of what is sensed and experienced. In this way the role of the audience at school performances is understood as active formation more than passive presence.

Formation of gold nanorods and gold nanorod films for surface-enhanced Raman scattering spectroscopy

International Nuclear Information System (INIS)

Trotsyuk, L.L.; Kulakovich, O.S.; Shabunya-Klyachkovskaya, E.V.; Gaponenko, S.V.; Vashchenko, S.V.

2016-01-01

The formation of gold nanorods as well as thin films prepared via electrostatic deposition of gold nanorods has been investigated. The obtained gold nanorods films have been used as substrates for the surface-enhanced Raman scattering analysis of sulfur-free organic molecules mitoxantrone and malachite green as well as inorganic malachite microcrystals for the first time. The additional modification of films with L-cysteine allows one to significantly extend the use of gold nanorods for the surface-enhanced Raman scattering analysis. (authors)

Influence of the oxyanion nature of the electrolyte on the corrosion/passivation behaviour of nickel

International Nuclear Information System (INIS)

Trompette, J.L.; Massot, L.; Vergnes, H.

2013-01-01

Highlights: •Influence of oxyanion nature on the passivation of nickel. •Constitutive atoms of oxyanion incorporated into the passive film. •Evidence of direct bonding between N and Ni surface. -- Abstract: The electrochemical behaviour of nickel in the presence of various electrolyte solutions at 0.1 mol/L concentration exhibits a distinction according to the oxyanion nature of the investigated anions. Passivity is achieved with oxyanions whereas it fails with anions not containing oxygen. SIMS and XPS measurements performed from isotopic and non isotopic KNO 3 electrolytes indicate that the oxygen and nitrogen atoms from nitrate oxyanions are incorporated into the passive film during anodic polarization and with evidence of a direct bonding between nitrogen and nickel surface

Selective formation of biphasic thin films of metal–organic frameworks by potential-controlled cathodic electrodeposition

OpenAIRE

Li, Minyuan Miller; Dinca, Mircea

2013-01-01

Cathodic electrodeposition lends itself to the formation of biphasic metal–organic framework thin films at room temperature from single deposition baths using potential bias as the main user input. Depending on the applied potential, we selectively deposit two different phases as either bulk mixtures or bilayer films.

Passivation properties of alumina for multicrystalline silicon nanostructure prepared by spin-coating method

Science.gov (United States)

Jiang, Ye; Shen, Honglie; Yang, Wangyang; Zheng, Chaofan; Tang, Quntao; Yao, Hanyu; Raza, Adil; Li, Yufang; Huang, Chunlai

2018-02-01

In this paper, we report passivation properties of inverted pyramidal nanostructure based multi-crystalline silicon (mc-Si) by Al2O3 films with spin-coating method. Precursors AlCl3 and Al(acac)3 for Al2O3 films were chosen for comparison. Al2O3/SiO x stacks were found to be able to passivate the nanostructured surface well. With the number of spin-coating up to five, the Al2O3 films could conformally attach the nanostructure. The weighted average reflectance values (ranging from 400-900 nm) of the passivated silicon surface could be reduced to 10.74% (AlCl3) and 11.12% (Al(acac)3), and the effective carrier lifetime could reach 7.84 and 16.98 μs, respectively. This work presented a potential process to fabricate low cost high efficiency mc-Si solar cells.

Formation and properties of electroactive fullerene based films with a covalently attached ferrocenyl redox probe

International Nuclear Information System (INIS)

Wysocka-Zolopa, Monika; Winkler, Krzysztof; Caballero, Ruben; Langa, Fernando

2011-01-01

Highlights: → Formation of redox active films of ferrocene derivatives of C 60 and palladium. → Fullerene moieties are covalently bonded to palladium atoms to form a polymeric network. → Electrochemical activity at both positive and negative potentials. → Charge transfer processes accompanied by transport of supporting electrolyte to and from the polymer layers. - Abstract: Redox active films have been produced via electrochemical reduction in a solution containing palladium(II) acetate and ferrocene derivatives of C 60 (Fc-C 60 and bis-Fc-C 60 ). In these films, fullerene moieties are covalently bonded to palladium atoms to form a polymeric network. Fc-C 60 /Pd and bis-Fc-C 60 /Pd films form uniform and relatively smooth layers on the electrode surface. These films are electrochemically active in both the positive and negative potential regions. At negative potentials, reduction of fullerene moiety takes place resulting in voltammetric behavior resembles typical of conducting polymers. In the positive potential range, oxidation of ferrocene is responsible for the formation of a sharp and symmetrical peak on the voltammograms. In this potential range, studied films behave as typical redox polymers. The charge associated with the oxidation process depends on the number of ferrocene units attached to the C 60 moiety. Oxidation and reduction of these redox active films are accompanied by transport of supporting electrolyte to and from the polymer layer. Films also show a higher permeability to anions than to cations.

Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

International Nuclear Information System (INIS)

Antonova, I. V.; Soots, R. A.; Seleznev, V. A.; Prints, V. Ya.

2007-01-01

The electrical properties of structures consisting of a monolayer of 1-octadecene deposited on the Si surface are investigated depending on the method of passivation of the surface prior to the deposition of the film (hydrogen and ion passivation) and the intensity of illumination which activates the addition reaction of molecules of 1-octadecene to the Si atoms. The monolayer of 1-octadecene on the Si surface is stable and provides the chemical passivation of the surface. Two types of traps are found, namely, traps for holes and electrons, whose density can be varied during deposition of the monolayer by the choice of intensity of illumination and by the method of passivation of the surface. In the case of a low level of illumination and/or the use of the iodine passivation of the surface, the electron traps prevail, and, in the case of high intensity of illumination and/or hydrogen passivation of the surface, the hole traps prevail. It is shown that the use of these films provides conductivity in thin near-surface layers of Si due to providing the mode of flat bands or accumulation of carriers near the surface

Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition

International Nuclear Information System (INIS)

Zuhr, R.A.; Haynes, T.E.; Galloway, M.D.; Tanaka, S.; Yamada, A.; Yamada, I.

1991-01-01

The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically analyzed ion beam to low energies (10-200 eV) for direct deposition onto the substrate under UHV conditions. The aluminum-on-silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. This technique has produced intriguing results for aluminum, with oriented crystalline films being formed at room temperature in spite of the 25% mismatch in lattice constant between aluminum and silicon. In this work, we have studied the formation of such films by IBD, with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40 to 300degC and with ion energies of 30-120 eV per ion. Completed films were analyzed by ion scattering, X-ray diffraction, scanning-electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are comparable to those for similar films grown by ICB deposition. (orig.)

Fluorination of Boron-Doped Diamond Film Electrodes for Minimization of Perchlorate Formation.

Science.gov (United States)

Gayen, Pralay; Chaplin, Brian P

2017-08-23

This research investigated the effects of surface fluorination on both rates of organic compound oxidation (phenol and terephthalic acid (TA)) and ClO 4 - formation at boron-doped diamond (BDD) film anodes at 22 °C. Different fluorination methods (i.e., electrochemical oxidation with perfluorooctanoic acid (PFOA), radio frequency plasma, and silanization) were used to incorporate fluorinated moieties on the BDD surface, which was confirmed by X-ray photoelectron spectroscopy (XPS). The silanization method was found to be the most effective fluorination method using a 1H,1H,2H,2H-perfluorodecyltrichlorosilane precursor to form a self-assembled monolayer (SAM) on the oxygenated BDD surface. The ClO 4 - formation decreased from rates of 0.45 ± 0.03 mmol m -2 min -1 during 1 mM NaClO 3 oxidation and 0.28 ± 0.01 mmol m -2 min -1 during 10 mM NaCl oxidation on the BDD electrode to below detectable levels (layer on the BDD surface that inhibited charge transfer via steric hindrance and hydrophobic effects. The surface coverages and thicknesses of the fluorinated films controlled the charge transfer rates, which was confirmed by estimates of film thicknesses using XPS and density functional theory simulations. The aliphatic silanized electrode also showed very high stability during OH • production. Perchlorate formation rates were below the detection limit (<0.12 μmoles m -2 min -1 ) for up to 10 consecutive NaClO 3 oxidation experiments.

Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

International Nuclear Information System (INIS)

Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

2004-01-01

We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

Science.gov (United States)

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

Study of 'liquid gold' coatings: Thermal decomposition and formation of metallic thin films

International Nuclear Information System (INIS)

Deram, V.; Turrell, S.; Darque-Ceretti, E.; Aucouturier, M.

2006-01-01

Organo-metallic solutions called liquid gold are largely used to obtain thin gilded films which are employed for decorative, technological and functional uses. However, these films often prove to be fragile with respect to use, resulting in loss of brilliance or even eventual film removal. An understanding of the behaviour of the layers requires good knowledge of the materials themselves. The present work was undertaken to better understand the evolution of the structural properties of liquid gold as it undergoes heat-processing. Accordingly, we followed the thermal decomposition processes of liquid gold coatings and the formation of the gilded metal layer using a combination of experimental techniques. First, thermal analyses coupled with mass spectrometry and infrared spectroscopy gave information concerning the decomposition of the organic medium. It has been found that the process of film formation can be decomposed into three steps, the second of which is an abrupt transition between 300 and 350 deg. C. Details on this transition have been obtained using real-time X-ray Diffraction and Rutherford Backscattering Spectrometry. Above 350 deg. C, the microstructure of the coating is reorganized to obtain a final layer which contains particles, of the size of a few hundreds nanometers, as shown by Transmission Electron Microscopy

Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

Science.gov (United States)

Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

2018-04-01

The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

Anodic films grown on magnesium and magnesium alloys in fluoride solutions

Energy Technology Data Exchange (ETDEWEB)

Ono, S. [Dept. of Applied Chemistry, Kogakuin Univ., Tokyo (Japan); Masuko, N. [Dept. of Metallurgical Engineering, Chiba Inst. of Tech., Narashino, Chiba (Japan)

2003-07-01

Formation behavior of anodic oxide films on magnesium in fluoride electrolytes was investigated with attention to the effects of anodizing voltage and aluminum content. In the range of voltage between 2 V and 100 V, porous film was formed in alkaline fluoride solution associated with high current density at around 5 V and at breakdown voltage. The critical voltage of breakdown to allow maximum current flow was approximately 60 V and relatively independent on substrate purity. The films formed at breakdown voltage showed a lava-like porous structure similar to those obtained on aluminum and other valve metals. Barrier films or semi-barrier films, which were composed of hydrated outer layer and relatively dense inner layer, were formed at the other voltages. In the case of AZ91D, the critical voltage increased to 70 V and peculiar phenomenon at 5 V was not observed, so that only barrier films were formed at less than the breakdown voltage. These phenomena can be explained by the effects of aluminum incorporation into the film to prevent dissolution and to promote passivation of magnesium. The depth profiles of constituent elements showed that aluminum distributed in whole depth of the film. (orig.)

Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

International Nuclear Information System (INIS)

Raghavan, A.; DebRoy, T.; Palmer, T. A.

2014-01-01

Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO 2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

Radiation-chemical formation of acids in polyvinyl butyral films with chlorinated additives

International Nuclear Information System (INIS)

Kriminiskaya, Z.K.

1993-01-01

Radiochromic indicators are commonly produced by reacting an indicator dye with an acid formed inside a polymer by irradiation. Halogenated and unhalogenated polymers were used, the latter containing halogenated organics. It was therefore of interest to study the formation of acid in polyvinyl butyral (PVD) with addition of a halogenated compound. Yields were measured of radiation-chemical acid formation in PVB films containing chloral hydrate and hexachloroethane. 5 refs., 1 fig., 2 tabs

Evaluation of polyethylene glycol/polylactic acid films in the prevention of adhesions in the rabbit adhesion formation and reformation sidewall models.

Science.gov (United States)

Rodgers, K; Cohn, D; Hotovely, A; Pines, E; Diamond, M P; diZerega, G

1998-03-01

To assess the efficacy of bioresorbable films consisting of various polyethylene glycol 6000 and polylactic acid block copolymers on the formation and reformation of adhesions in rabbit models of adhesion development between the sidewall to the adjacent cecum and bowel. The composition of the different polymers was expressed by the number of monomeric units in the block, namely, ethylene oxide (EO) and lactic acid (LA), respectively. Studies of the efficacy of EO/LA films were conducted in rabbit sidewall adhesion formation studies in the presence and absence of blood and in rabbit adhesion reformation studies. REPEL (Life Medical Sciences, Edison, NJ), a film of EO/LA ratio 3.0 manufactured under commercial conditions, was also tested in these animal models. University-based laboratory. New Zealand white rabbits. Placement of films of various EO/LA ratios at the site of injury to the parietal peritoneum. Adhesion formation and reformation. Films of various EO/LA ratios, Seprafilm (Genzyme, Cambridge, MA) and Interceed (Johnson and Johnson Medical, Arlington, TX) placed over an area of excised sidewall at the time of initial injury were highly efficacious in the prevention of adhesion formation. A film of EO/LA ratio 3.7, in contrast with Interceed, was also shown to maintain maximal efficacy in the reduction of adhesion formation in the presence of blood. Further, a film of EO/LA ratio 3.0 produced under commercial conditions, REPEL, was highly efficacious in reducing adhesion development in the rabbit models of adhesion and reformation. These studies suggest that bioresorbable EO/LA films reduced adhesion development in rabbit models of adhesion formation and reformation.

Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution.

Science.gov (United States)

Zhang, Jing; Yang, Yingchao; Lou, Jun

2016-09-09

Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

Passive behaviour of alloy corrosion-resistant steel Cr10Mo1 in simulating concrete pore solutions with different pH

International Nuclear Information System (INIS)

Ai, Zhiyong; Jiang, Jinyang; Sun, Wei; Song, Dan; Ma, Han; Zhang, Jianchun; Wang, Danqian

2016-01-01

Highlights: • A new alloy corrosion-resistant steel Cr10Mo1 is developed for reinforcing rebar of concrete in severe environments. • The effects of pH on the passive behaviour of Cr10Mo1 steel compared with plain carbon steel were studied systematically by electrochemical techniques and surface analysis. • The mechanism for self-reinforcing passivity against carbonation of the corrosion-resistant steel is revealed. - Abstract: The passive behaviour of new alloy corrosion-resistant steel Cr10Mo1 and plain carbon steel (as a comparison) in simulating concrete pore solutions of different pH (ranging from 13.5 to 9.0) under open circuit potential conditions, was evaluated by various electrochemical techniques: potentiodynamic polarization, capacitance measurements and electrochemical impedance spectroscopy. The chemical composition and structure of passive films were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The electrochemical responses of passive films show that Cr10Mo1 steel has an increasing passivity with pH decreasing while carbon steel dose conversely, revealing carbonation does no negative effect on passivation of the corrosion-resistant steel. SIMS reveals that the passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer mainly consisting of Fe oxides and hydroxides, and an inner layer enriched in Cr species, while only a Fe-concentrated layer for carbon steel. According to the XPS analysis results, as the pH decreases, more stable and protective Cr oxides are enriched in the film on Cr10Mo1 steel while Fe oxides gradually decompose. Higher content of Cr oxides in the film layer provides Cr10Mo1 corrosion-resistant steel more excellent passivity at lower pH.

Passive behaviour of alloy corrosion-resistant steel Cr10Mo1 in simulating concrete pore solutions with different pH

Energy Technology Data Exchange (ETDEWEB)

Ai, Zhiyong, E-mail: 230139452@seu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Jiang, Jinyang, E-mail: jiangjinyang16@163.com [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Sun, Wei, E-mail: sunwei@seu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Song, Dan, E-mail: songdancharls@hhu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); College of Mechanics and Materials, Hohai University, Nanjing 210098, Jiangsu (China); Ma, Han, E-mail: mahan-iris@shasteel.cn [Research Institute of Jiangsu Shasteel Iron and Steel, Zhangjiagang 215625, Jiangsu (China); Zhang, Jianchun, E-mail: Zhangjc-iris@shasteel.cn [Research Institute of Jiangsu Shasteel Iron and Steel, Zhangjiagang 215625, Jiangsu (China); Wang, Danqian, E-mail: wonderbaba@126.com [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China)

2016-12-15

Highlights: • A new alloy corrosion-resistant steel Cr10Mo1 is developed for reinforcing rebar of concrete in severe environments. • The effects of pH on the passive behaviour of Cr10Mo1 steel compared with plain carbon steel were studied systematically by electrochemical techniques and surface analysis. • The mechanism for self-reinforcing passivity against carbonation of the corrosion-resistant steel is revealed. - Abstract: The passive behaviour of new alloy corrosion-resistant steel Cr10Mo1 and plain carbon steel (as a comparison) in simulating concrete pore solutions of different pH (ranging from 13.5 to 9.0) under open circuit potential conditions, was evaluated by various electrochemical techniques: potentiodynamic polarization, capacitance measurements and electrochemical impedance spectroscopy. The chemical composition and structure of passive films were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The electrochemical responses of passive films show that Cr10Mo1 steel has an increasing passivity with pH decreasing while carbon steel dose conversely, revealing carbonation does no negative effect on passivation of the corrosion-resistant steel. SIMS reveals that the passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer mainly consisting of Fe oxides and hydroxides, and an inner layer enriched in Cr species, while only a Fe-concentrated layer for carbon steel. According to the XPS analysis results, as the pH decreases, more stable and protective Cr oxides are enriched in the film on Cr10Mo1 steel while Fe oxides gradually decompose. Higher content of Cr oxides in the film layer provides Cr10Mo1 corrosion-resistant steel more excellent passivity at lower pH.

Calibrating passive sampling and passive dosing techniques to lipid based concentrations

DEFF Research Database (Denmark)

Mayer, Philipp; Schmidt, Stine Nørgaard; Annika, A.

2011-01-01

Equilibrium sampling into various formats of the silicone polydimethylsiloxane (PDMS) is increasingly used to measure the exposure of hydrophobic organic chemicals in environmental matrices, and passive dosing from silicone is increasingly used to control and maintain their exposure in laboratory...... coated vials and with Head Space Solid Phase Microextraction (HS-SPME) yielded lipid based concentrations that were in good agreement with each other, but about a factor of two higher than measured lipid-normalized concentrations in the organisms. Passive dosing was applied to bioconcentration...

Passivation behavior of SUS 304 stainless steel in neutral solutions at elevated temperature

International Nuclear Information System (INIS)

Tanno, Kazuo; Kato, Koji; Ohnaka, Noriyuki; Okajima, Yoshiaki; Minato, Akira.

1981-01-01

Cyclic voltammograms of SUS 304 stainless steel in various neutral solutions such as Na 2 SO 4 at high temperature were measured, as a successive study to previous report in which effects of temperature and pH on polarization behavior of stainless steel were studied. In this measurement Ag/AgCl reference electrode and platinum counter electrode were used in a static autoclave lined with inconel. Passive films formed in various conditions were analysed by electron diffraction and Auger spectroscopy. Results obtained were compared with anodic behavior of iron, chromium and nickel and with thermodynamical stabilities of their compounds. The main results are summarized as follows. (1) Stainless steel shows such electrochemical behavior as active dissolution, passivation and transpassivation in a deaerated neutral solution at 250 0 C after fully reductive treatment of the specimen. In air-saturated solution, the peak of active dissolution is not observed. In the passive range there are intermediate oxidation and reduction peaks, and it is assumed that dissolved ionic species are oxidized to form oxide of spinel type and higher oxidized state successively at these peaks. (2) Electrochemical behavior of specimens in 0.1 M sulfate, -phosphate and -carbonate solutions are almost the same and rather thick films form in these solutions. On the other hand, specimens are easy to passivate in borate and -nitrate solution, and their passive films are thin. (author)

Using sub-micron silver-nanoparticle based films to counter biofilm formation by Gram-negative bacteria

Science.gov (United States)

Gillett, A. R.; Baxter, S. N.; Hodgson, S. D.; Smith, G. C.; Thomas, P. J.

2018-06-01

Composite films comprised of silver nanoparticles (AgNPs) grown using a low-cost straightforward chemical bath based method have been deposited on glass microscope slides to investigate their potential as a sacrificial antibacterial coating. The as-deposited films have been characterised using scanning electron microscopy (SEM) and optical profilometry. These suggested that the films were relatively uniform in coverage. Chemical composition of the AgNP films has been studied by using X-ray photoelectron spectroscopy (XPS). The XPS analysis indicated that the Ag was in a metallic form able to sustain plasmon behaviour, and that low levels of residual nanoparticle precursors were present. Particle size was characterised using transmission electron microscopy (TEM) which showed an average particle size of 10.6 nm. The effectiveness of the films as an antibacterial coating was tested against Escherichia coli. The AgNP film was determined to be effective in the killing of E. coli cells over a 24 h period when compared to equivalent samples that contained no silver. Of particular note was that only minimal bacterial growth was detected over the first 12 h of testing, up to 78.6 times less than the control samples, suggesting the film is very efficient at slowing initial biofilm formation. The use of AgNP based films that have been synthesised using a novel low-cost, low-temperature and highly upscalable method is demonstrated as a promising solution for the deployment of silver as an effective sacrifical antimicrobial coating to counter the formation of potentially hazardous Gram negative biofilms.

The Effects of Acid Passivation, Tricresyl Phosphate Pre-Soak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

Science.gov (United States)

Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar

1997-01-01

The boundary-lubrication performance of perfluoropolyether (PFPE) thin films in the presence of passivated 440 C stainless steel is presented. The study utilized a standard ball-on-disc tribometer. Stainless steel surfaces were passivated with one of four techniques: 1) submersion in a chromic acid bath for 30 minutes at 46 C, 2) submersion in a chromic acid bath for 60 minutes at 56 C, 3) submersion in a tricresyl phosphate (TCP) bath for 2 days at 107 C, or 4) UV/Ozone treated for 15 minutes. After passivation, each disc had a 400 A film of PFPE (hexafluoropropene oxide) applied to it reproducibly (+/- 20%) and uniformly (+/- 15%) using a film deposition device. The lifetimes of these films were quantified by measuring the number of sliding wear cycles required to induce an increase in the friction coefficient from an initial value characteristic of the lubricated wear couple to a final, or failure value, characteristic of an unlubricated, unpassivated wear couple. The lubricated lifetime of the 440 C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray Photoelectron Spectroscopy (XPS). It was found that chromic acid passivation altered the Cr to Fe ratio of the surface. TCP passivation resulted in a FePO4 layer on the surface, while UV/Ozone passivation only removed the carbonaceous contamination layer. None of the passivation techniques were found to dramatically increase the oxide film thickness.

Fabrication of PDMS/SWCNT thin films as saturable absorbers

International Nuclear Information System (INIS)

Hernandez-Romano, I; Sanchez-Mondragon, J J; Davila-Rodriguez, J; Delfyett, P J; May-Arrioja, D A

2011-01-01

We present a novel technique to fabricate a saturable absorber thin film based on Polydimethylsiloxane doped with Single Wall Carbon Nanotubes. Using this film a passive mode-locked fiber laser in a standard ring cavity configuration was built by inserting the film between two angled connectors. Self-starting passively mode-locked laser operation was easily observed. The generated pulses have a width of 1.26 ps at a repetition rate of 22.7 MHz with an average power of 4.89 mW.

Surface passivation of high-purity germanium gamma-ray detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

1993-01-01

The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

Nitridation of SiO2 for surface passivation

Science.gov (United States)

Lai, S. K. C.

1985-01-01

An attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.

Alloy formation during the electrochemical growth of a Ag-Cd ultrathin film on Au(1 1 1)

International Nuclear Information System (INIS)

Barrio, M.C. del; Garcia, S.G.; Salinas, D.R.

2009-01-01

The electrodeposition of a Ag/Cd ultrathin film on a Au(1 1 1) surface and the formation of a surface alloy during this process have been studied using classical electrochemical techniques and in situ Scanning Tunneling Microscopy (STM). The films were obtained from separate electrolytes containing Ag + or Cd 2+ ions and from a multicomponent solution containing both ions. First, the polarization conditions were adjusted in order to form a Ag film by overpotential deposition. Afterwards, a Cd monolayer was formed onto this Au(1 1 1)/Ag modified surface by underpotential deposition. The voltammetric behavior of the Cd UPD and the in situ STM images indicated that the ultrathin Ag films were uniformly deposited and epitaxially oriented with respect to the Au(1 1 1) surface. Long time polarization experiments showed that a significant Ag-Cd surface alloying accompanied the formation of the Cd monolayer on the Au(1 1 1)/Ag modified surface, independent of the Ag film thickness. In the case of an extremely thin Ag layer (1 Ag ML) the STM images and long time polarization experiments revealed a solid state diffusion process of Cd, Ag, and Au atoms which can be responsible for the formation of different Ag-Cd or Au-Ag-Cd alloy phases.

Process comparison for fracture-induced formation of surface structures on polymer films

Energy Technology Data Exchange (ETDEWEB)

Lee, Yueh-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Yang, Fuqian [Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506 (United States); Chen, Chia-Chieh [Institute of Nuclear Energy Research, Longtan, Taoyuan 32546, Taiwan (China); Lee, Sanboh, E-mail: sblee@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2014-01-01

Using three different splitting approaches such as point-load splitting, tension-splitting and peeling–splitting, different surface ripples were produced on poly(methyl methacrylate) (PMMA)-based polymer films. Independent of the splitting approaches, the spatial wavelength of the surface structures is a linear function of the film thickness with the approximately same differential ratio of the spatial wavelength to the film thickness. The apparent surface residual stress was calculated from the thickness dependence of the spatial frequency, and the magnitude of the apparent surface stress increased with the increase of the film thickness. After exposing the aged PMMA-based photoresist at liquid state to gamma-irradiation, the effects of aging and the gamma-irradiation were investigated on the splitting-induced formation of surface structures. For the peeling–splitting process, the differential ratio of the spatial wavelength to the film thickness for the aged samples is larger than that for non-aged samples. The point-load splitting could not produce any surface pattern on the gamma-irradiated films. None of the splitting approaches could form surface structures for polymer films exposed to irradiation of high dose. Both the spatial wavelength and the apparent surface stress increased with the film thickness for the irradiated polymer films. - Highlights: • Using splitting processes, surface ripples were formed on polymer films. • The surface ripples were induced by compressively apparent surface stress. • The spatial wavelength of the ripples is a linear function of the film thickness. • The spatial wavelength of the ripples is affected by gamma-ray irradiation. • The spatial wavelength of the ripples is affected by aging.

BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

Science.gov (United States)

Hara, Kosuke O.; Yamamoto, Chiaya; Yamanaka, Junji; Arimoto, Keisuke; Nakagawa, Kiyokazu; Usami, Noritaka

2018-04-01

Thermal evaporation is a simple and rapid method to fabricate semiconducting BaSi2 films. In this study, to elucidate the BaSi2 formation mechanism, the microstructure of a BaSi2 epitaxial film fabricated by thermal evaporation has been investigated by transmission electron microscopy. The BaSi2 film is found to consist of three layers with different microstructural characteristics, which is well explained by assuming two stages of film deposition. In the first stage, BaSi2 forms through the diffusion of Ba atoms from the deposited Ba-rich film to the Si substrate while in the second stage, the mutual diffusion of Ba and Si atoms in the film leads to BaSi2 formation. On the basis of the BaSi2 formation mechanism, two issues are addressed. One is the as-yet unclarified reason for epitaxial growth. It is found important to quickly form BaSi2 in the first stage for the epitaxial growth of upper layers. The other issue is the high oxygen concentration in BaSi2 films around the BaSi2-Si interface. Two routes of oxygen incorporation, i.e., oxidation of the Si substrate surface and initially deposited Ba-rich layer by the residual gas, are identified. On the basis of this knowledge, oxygen concentration is decreased by reducing the holding time of the substrate at high temperatures and by premelting of the source. In addition, X-ray diffraction results show that the decrease in oxygen concentration can lead to an increased proportion of a-axis-oriented grains.

Effect of passivation with CO on the electrochemical corrosion behavior of uranium-niobium alloy

International Nuclear Information System (INIS)

Fu Xiaoguo; Dai Lianxin; Zou Juesheng; Bai Chaomao; Wang Xiaolin

2000-01-01

Electrochemical studies are performed to investigate the corrosion resistance of uranium-niobium alloy before and after passivated with carbon monoxide. Using X-ray photoelectron spectroscopy (XPS), the surface composition of specimen passivated with carbon monoxide is determined. The corrosion resistance of uranium-niobium alloy is well improved because the passive layer (UC/UC x O y + Nb 2 O 5 + UO 2 ) on surface serves as passive film and increases the anodic impedance after the specimen is passivated with carbon monoxide

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

Directory of Open Access Journals (Sweden)

Ing-Song Yu

2013-01-01

Full Text Available Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to deposit TiO2 thin films for the surface passivation and antireflection coating of silicon solar cells. TiO2 thin films deposited at different temperatures (200°C, 300°C, 400°C, and 500°C on FZ n-type silicon wafers are in the thickness of 66.4 nm ± 1.1 nm and in the form of self-limiting growth. For the properties of surface passivation, Si surface is effectively passivated by the 200°C deposition TiO2 thin film. Its effective minority carrier lifetime, measured by the photoconductance decay method, is improved 133% at the injection level of  cm−3. Depending on different deposition parameters and annealing processes, we can control the crystallinity of TiO2 and find low-temperature TiO2 phase (anatase better passivation performance than the high-temperature one (rutile, which is consistent with the results of work function measured by Kelvin probe. In addition, TiO2 thin films on polished Si wafer serve as good ARC layers with refractive index between 2.13 and 2.44 at 632.8 nm. Weighted average reflectance at AM1.5G reduces more than half after the deposition of TiO2. Finally, surface passivation and antireflection properties of TiO2 are stable after the cofire process of conventional crystalline Si solar cells.

In-situ investigation of the icosahedral Al-Cu-Fe phase formation in thin films

Energy Technology Data Exchange (ETDEWEB)

Haidara, F., E-mail: fanta.haidara@im2np.fr [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France); Duployer, B. [Universite Paul Sabatier CIRIMAT-LCMIE 2R1, 118, Route de Narbonne, 31062 Toulouse Cedex 09 (France); Mangelinck, D.; Record, M.-C. [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France)

2012-09-05

Highlights: Black-Right-Pointing-Pointer We investigated the phase formation of i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} in thin films. Black-Right-Pointing-Pointer We characterized the samples by DSC and in-situ XRD and resistance measurements. Black-Right-Pointing-Pointer The resistivity value for i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} was determined. - Abstract: This work is an investigation of the formation by reactive diffusion at high temperatures of the icosahedral phase, i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}, in thin films. The samples were prepared by sputtering at room temperature. The elements Al, Cu and Fe were sequentially deposited onto oxidized silicon substrates. The two following stacking sequences, Al/Cu/Fe and Al/Fe/Cu, were investigated. The phase formation was studied using in situ resistivity, in situ X-ray Diffraction and Differential Scanning Calorimetry measurements. Whatever the stacking sequence, the sequences of phase formation evidenced during the heating treatment are similar. However the temperatures of formation for the first phases that are formed are different; they are higher in the case of the Al/Fe/Cu stacking sequence.

Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

International Nuclear Information System (INIS)

Pelleg, J.; Rosenberg, S.; Sinder, M.

2011-01-01

A qualitative analysis of the kinetics of phase formation in a conductor film/Si substrate system by radiofrequency (RF) heating is presented. The analysis is done by using the mathematical approach of the heat explosion theory. It is shown that the system can experience heating at constant temperature or a sudden temperature increase, i.e. heat explosion. The relation between the parameters of the system in the heat explosion regime is presented in a simple analytical form. It was found that measurable quantities, such as film thickness, sheet resistance, specimen dimensions and applied magnetic field, determine whether the process occurs in the constant heating or heat explosion stages. The model was tested for the Ta-Ti-Si system by considering some of the mentioned measurable quantities which were obtained by RF induction heating of Ta-Ti film on Si(1 1 1) and Si(1 0 0) substrates. The agreement of theory with experiment is reasonable. Concentration of Ta in the conductor film, film thickness and the orientation of the Si substrate might influence the reaction rate. On Si(1 1 1) substrates the reaction goes to completion, whereas on Si(1 0 0) intermediate phases remain. This observation was explained in terms of an interface reaction-controlled process of Si atoms transferring from the substrate to the film.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

Science.gov (United States)

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-24

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al 2 O 3 , considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al 2 O 3 -passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers

Science.gov (United States)

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-01

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Integrated Passive And Wireless Sensor

KAUST Repository

Li, Bodong; Kosel, Jü rgen

2015-01-01

A passive and wireless sensor is provided for sensing at least one of magnetic field, temperature or humidity. The sensor can provide only one of the sensing functions, individually or any combination of them simultaneously. It can be used for various applications where magnetic field changes, temperature and/or humidity need to be measured. In one or more embodiments, a surface acoustic wave (SAW) sensor is provided that can measure one or more of a magnetic field (or current that generates the magnetic field), temperature and humidity. In one or more embodiments, a magnetoimpedence (MI) sensor (for example a thin film giant magnetoimpedance (GMI) sensor), a thermally sensitive (for example a Lithium Niobite (LiNbO.sub.3)) substrate, and a humidity sensitive film (for example a hydrogel film) can be used as sensing elements.

Integrated Passive And Wireless Sensor

KAUST Repository

Li, Bodong

2015-04-30

A passive and wireless sensor is provided for sensing at least one of magnetic field, temperature or humidity. The sensor can provide only one of the sensing functions, individually or any combination of them simultaneously. It can be used for various applications where magnetic field changes, temperature and/or humidity need to be measured. In one or more embodiments, a surface acoustic wave (SAW) sensor is provided that can measure one or more of a magnetic field (or current that generates the magnetic field), temperature and humidity. In one or more embodiments, a magnetoimpedence (MI) sensor (for example a thin film giant magnetoimpedance (GMI) sensor), a thermally sensitive (for example a Lithium Niobite (LiNbO.sub.3)) substrate, and a humidity sensitive film (for example a hydrogel film) can be used as sensing elements.

Controlled formation of anatase and rutile TiO₂ thin films by reactive magnetron sputtering

OpenAIRE

Rafieian, Damon; Ogieglo, Wojciech; Savenije, T.J.; Lammertink, Rob G H

2015-01-01

We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, ...

Satellite formation flying relative dynamics, formation design, fuel optimal maneuvers and formation maintenance

CERN Document Server

Wang, Danwei; Poh, Eng Kee

2017-01-01

This book systematically describes the concepts and principles for multi-satellite relative motion, passive and near passive formation designs, trajectory planning and control for fuel optimal formation maneuvers, and formation flying maintenance control design. As such, it provides a sound foundation for researchers and engineers in this field to develop further theories and pursue their implementations. Though satellite formation flying is widely considered to be a major advance in space technology, there are few systematic treatments of the topic in the literature. Addressing that gap, the book offers a valuable resource for academics, researchers, postgraduate students and practitioners in the field of satellite science and engineering.

Offset-gated poly-Si TFTs using in-situ fluorine passivation and excimer laser doping

International Nuclear Information System (INIS)

Jung, Sang Hoon; Kim, Cheon Hong; Yoo, Juhn Suk; Han, Min Koo

2000-01-01

A new low-temperature poly-Si thin film transistor (TFT) fabrication method employing in-situ fluorine passivation and excimer-laser doping is proposed to fabricate offset-gated poly-Si TFTs. In the new process, the crystallization, the in-situ fluorine passivation of the active layer, and the doping of the source/drain region are performed simultaneously with only one step of excimer laser annealing while the conventional fabrication method requires two laser annealing steps. Employing phosphosilicate glass (PSG) films as a diffusion source, we successfully accomplished excimer laser doping. The subthreshold and the on-state characteristics of the device with in-situ fluorine passivation were considerably improved. This improvement was due to the fluorine passivation effects, which cured dangling bonds and strained bonds in the poly-Si channel, the offset region, and the SiO 2 /poly-Si interface

Offset-gated poly-Si TFTs using in-situ fluorine passivation and excimer laser doping

CERN Document Server

Jung, S H; Yoo, J S; Han, M K

2000-01-01

A new low-temperature poly-Si thin film transistor (TFT) fabrication method employing in-situ fluorine passivation and excimer-laser doping is proposed to fabricate offset-gated poly-Si TFTs. In the new process, the crystallization, the in-situ fluorine passivation of the active layer, and the doping of the source/drain region are performed simultaneously with only one step of excimer laser annealing while the conventional fabrication method requires two laser annealing steps. Employing phosphosilicate glass (PSG) films as a diffusion source, we successfully accomplished excimer laser doping. The subthreshold and the on-state characteristics of the device with in-situ fluorine passivation were considerably improved. This improvement was due to the fluorine passivation effects, which cured dangling bonds and strained bonds in the poly-Si channel, the offset region, and the SiO sub 2 /poly-Si interface.

Passivation of laser-treated nickel aluminum bronze as measured by electrochemical impedance spectroscopy

International Nuclear Information System (INIS)

Klassen, R.D.; Hyatt, C.V.; Roberge, P.R.

2000-01-01

Electrochemical impedance spectroscopy was used to assess the corrosion behavior of the weld zones and surface conditions of a laser-clad nickel aluminum bronze immersed in a 3.5% neutral saline solution. The zones and conditions examined included: (i) as-cast base material; (ii) laser-clad material with the high temperature oxide from welding intact; (iii) polished laser-clad material and (iv) specimens representative of just the as-deposited and reheated zones of the laser-clad surface. A pseudo steady-state level of passivation was reached in all the samples within 40 hours. The reheated zone passivated more slowly than the as-deposited region and both weld zones passivated more quickly than the base material. Electrochemical impedance data illustrated a transition during the passivation process of the polished specimens that is consistent with the development of a film layer that restricted mass transfer. The welding oxide from the laser treatment immediately behaved as a passivation film that was indistinguishable from that which eventually develops on polished specimens. (author)

Passivation of bimetallic catalysts used in water treatment: prevention and reactivation.

Science.gov (United States)

Chen, Jianming; Gillham, Robert W; Gui, Lai

2013-01-01

With respect to degradation rates and the range in contaminants treated, bimetals such as Ni-Fe or Pd-Fe generally outperform unamended granular iron. However, the catalytic enhancement is generally short-lived, lasting from a few days to months. To take advantage of the significant benefits of bimetals, this study aims at developing an effective method for the rejuvenation of passivated bimetals and alternatively, the prevention of rapid reactivity loss of bimetals. Because the most likely cause of Ni-Fe and Pd-Fe passivation is the deposition of iron oxide films over the catalyst sites, it is hypothesized that removal of the iron oxide films will restore the lost reactivity or avoiding the deposition of iron oxide films will prevent passivation. Two organic ligands (ethylenediaminetetraacetic acid (EDTA), and [s,s]-ethylenediaminedisuccinate acid ([s,s]-EDDS)) and two acids (citric acid and sulphuric acid) were tested as possible chemical reagents for both passivation rejuvenation and prevention. Trichloroethene (TCE) and Ni-Fe were chosen as probes for chlorinated solvents and bimetals respectively. The test was carried out using small glass columns packed with Ni-Fe. TCE solution containing a single reagent at various concentrations was pumped through the Ni-Fe columns with a residence time in the Ni-Fe of about 6.6 min. TCE concentrations in the influent and effluent were measured to evaluate the performance of each chemical reagent. The results show that (i) for passivated Ni-Fe, flushing with a low concentration of acid or ligand solution without mechanical mixing can fully restore the lost reactivity; and (ii) for passivation prevention, adding a small amount of a ligand or an acid to the feed solution can successfully prevent or at least substantially reduce Ni-Fe passivation. All four chemicals tested are effective in both rejuvenation and prevention, but sulphuric acid and citric acid are considered to be the most practical reagents due to their

Laser-fired contact formation on metallized and passivated silicon wafers under short pulse durations

Science.gov (United States)

Raghavan, Ashwin S.

The objective of this work is to develop a comprehensive understanding of the physical processes governing laser-fired contact (LFC) formation under microsecond pulse durations. Primary emphasis is placed on understanding how processing parameters influence contact morphology, passivation layer quality, alloying of Al and Si, and contact resistance. In addition, the research seeks to develop a quantitative method to accurately predict the contact geometry, thermal cycles, heat and mass transfer phenomena, and the influence of contact pitch distance on substrate temperatures in order to improve the physical understanding of the underlying processes. Finally, the work seeks to predict how geometry for LFCs produced with microsecond pulses will influence fabrication and performance factors, such as the rear side contacting scheme, rear surface series resistance and effective rear surface recombination rates. The characterization of LFC cross-sections reveals that the use of microsecond pulse durations results in the formation of three-dimensional hemispherical or half-ellipsoidal contact geometries. The LFC is heavily alloyed with Al and Si and is composed of a two-phase Al-Si microstructure that grows from the Si wafer during resolidification. As a result of forming a large three-dimensional contact geometry, the total contact resistance is governed by the interfacial contact area between the LFC and the wafer rather than the planar contact area at the original Al-Si interface within an opening in the passivation layer. By forming three-dimensional LFCs, the total contact resistance is significantly reduced in comparison to that predicted for planar contacts. In addition, despite the high energy densities associated with microsecond pulse durations, the passivation layer is well preserved outside of the immediate contact region. Therefore, the use of microsecond pulse durations can be used to improve device performance by leading to lower total contact resistances

Influence of Temperature and Chloride Concentration on Passivation Mechanism and Corrosion of a DSS2209 Welded Joint

Science.gov (United States)

Hachemi, Hania; Azzaz, Mohamed; Djeghlal, Mohamed Elamine

2016-10-01

The passivity behavior of a 2209 duplex stainless steel welded joint was investigated using potentiodynamic polarization, Mott-Schottky analysis and EIS measurements. In order to evaluate the contribution of temperature, chloride concentration and microstructure, a sequence of polarization tests were carried out in aerated NaCl solutions selected according to robust design of a three level-three factors Taguchi L9 orthogonal array. Analysis of signal-to-noise ratio and ANOVA were achieved on all measured data, and the contribution of every control factor was estimated. The results showed that the corrosion resistance of 2209 duplex stainless steel welded joint is related to the evolution of the passive film formed on the surface. It was found that the passive film on the welded zone possessed n- and p-type semiconductor characteristics. With the increase of solution temperature and chlorides concentration, the corrosion resistance of the passive film is more affected in the weldment than in the base metal.

Features of the theories of the formation of oxide films on aluminum alloys piston diesel engines with micro-arc oxidation

Directory of Open Access Journals (Sweden)

Skryabin M.L.

2017-12-01

Full Text Available The article considers one of the promising methods of surface hardening of piston aluminum alloy – microarc oxidation. Described fundamental differences from the micro-arc oxidation anodizing and similar electrochemical processes. The schemes of formation of the barrier and outer layers surface treatment in aqueous electrolytes. Shows the mechanism of formation of the interface. Considers the formation of layers with high porosity and method of exposure. Also describes the exponential dependence of the current density from the electric field in the surface film of the base metal. The role of discharges in the formation of oxide layers on the treated surface. Proposed and described features of the three main theories of formation of oxide films on the surface of the piston: physical and geometrical model of Keller; models of formation of oxide films as a colloid formations and plasma theory (theory of oxidation with the formation of plasma in the zone of oxidation. The features of formation of films in each of the models. For the model of Keller porous oxide film is a close-Packed oxide cell, having the shape of a prism. They are based on a hexagonal prism. These cells have normal orientation to the surface of the metal. In the center of the unit cell there is one season that is a channel, whose size is determined by the composition of the electrolyte, the chemical composition of the base metal and the electrical parameters of the process of oxidation. In the micro-arc oxidation process according to this model, the beginning of the formation of cells occurs with the formation of the barrier layer, passing in the porous layer and, over time, the elonga-tion of the pores, due to the constant etching electrolyte. In the theory of formation of the oxide films as kolloidnyh formations revealed that formation of pores in the film is a result of their growth. The anodic oxide is represented by a directed electric field, the alumina gel colloidal and

SPH based modelling of oxide and oxide film formation in gravity die castings

International Nuclear Information System (INIS)

Ellingsen, K; M'Hamdi, M; Coudert, T

2015-01-01

Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality. (paper)

Coarsening and pattern formation during true morphological phase separation in unstable thin films under gravity

Science.gov (United States)

Kumar, Avanish; Narayanam, Chaitanya; Khanna, Rajesh; Puri, Sanjay

2017-12-01

We address in detail the problem of true morphological phase separation (MPS) in three-dimensional or (2 +1 )-dimensional unstable thin liquid films (>100 nm) under the influence of gravity. The free-energy functionals of these films are asymmetric and show two points of common tangency, which facilitates the formation of two equilibrium phases. Three distinct patterns formed by relative preponderance of these phases are clearly identified in "true MPS". Asymmetricity induces two different pathways of pattern formation, viz., defect and direct pathway for true MPS. The pattern formation and phase-ordering dynamics have been studied using statistical measures such as structure factor, correlation function, and growth laws. In the late stage of coarsening, the system reaches into a scaling regime for both pathways, and the characteristic domain size follows the Lifshitz-Slyozov growth law [L (t ) ˜t1 /3] . However, for the defect pathway, there is a crossover of domain growth behavior from L (t ) ˜t1 /4→t1 /3 in the dynamical scaling regime. We also underline the analogies and differences behind the mechanisms of MPS and true MPS in thin liquid films and generic spinodal phase separation in binary mixtures.

Enhanced photoelectrocatalytic performance of α-Fe2O3 thin films by surface plasmon resonance of Au nanoparticles coupled with surface passivation by atom layer deposition of Al2O3.

Science.gov (United States)

Liu, Yuting; Xu, Zhen; Yin, Min; Fan, Haowen; Cheng, Weijie; Lu, Linfeng; Song, Ye; Ma, Jing; Zhu, Xufei

2015-12-01

The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposition. The Au nanoparticles (NPs) and Al2O3 shell by atom layer deposition were further introduced to modify the photoelectrodes. Different constructions were made with different deposition orders of Au and Al2O3 on Fe2O3 films. The Fe2O3-Au-Al2O3 construction shows the best PEC performance with 1.78 times enhancement by localized surface plasmon resonance (LSPR) of NPs in conjunction with surface passivation of Al2O3 shells. Numerical simulation was carried out to investigate the promotion mechanisms. The high PEC performance for Fe2O3-Au-Al2O3 construction electrode could be attributed to the Al2O3 intensified LSPR, effective surface passivation by Al2O3 coating, and the efficient charge transfer due to the Fe2O3-Au Schottky junctions.

Natural organic matter interactions with polyamide and polysulfone membranes: Formation of conditioning film

KAUST Repository

Gutierrez, Leonardo

2015-03-31

A conditioning film changes the physicochemical properties of the membrane surface and strongly affects subsequent fouling behavior. Results from this Atomic Force Microscopy study indicate that Natural Organic Matter (NOM) characteristics, membrane surface properties, and solution chemistry are fundamental during conditioning film formation. Repulsive forces were observed between HUM (humic-NOM) and Polyamide (PA) or Polysulfone (PS) membranes during approach in Na+ and Ca2+ solutions. However, repulsive and attractive forces were randomly recorded during BIOP (biopolymer-NOM) approach to both membranes, possibly caused by low electrostatic repulsion, hydrogen bonding, and presence of chemically/physically heterogeneous regions on membrane surfaces. During retracting, Ca2+ ions increased HUM adhesion to PA and PS membrane, indicating cation bridging/complexation as dominant interacting mechanism for this isolate. BIOP adsorption on PS and PA membrane was stronger than HUM under similar solution conditions, where hydrogen bonding would play an important role. Additionally, irrespective of solution conditions, higher adhesion energy was recorded on PS than on PA membrane for both NOM isolates, indicating membrane hydrophobicity as an important interacting factor. Results from this research will advance our understanding of conditioning film formation for NOM isolates and membranes of different physicochemical characteristics.

Formation of biaxial texture in metal films by selective ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

2006-05-15

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

Formation of biaxial texture in metal films by selective ion beam etching

International Nuclear Information System (INIS)

Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

2006-01-01

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

Surface Defect Passivation and Reaction of c-Si in H2S.

Science.gov (United States)

Liu, Hsiang-Yu; Das, Ujjwal K; Birkmire, Robert W

2017-12-26

A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H 2 S) is demonstrated in this paper. A high-level passivation quality with an effective minority carrier lifetime (τ eff ) of >2000 μs corresponding to a surface recombination velocity of passivation by monolayer coverage of S on the Si surface. However, S passivation of the Si surface is highly unstable because of thermodynamically favorable reaction with atmospheric H 2 O and O 2 . This instability can be eliminated by capping the S-passivated Si surface with a protective thin film such as low-temperature-deposited amorphous silicon nitride.

Spray-ILGAR {sup registered} deposition of controllable ZnS nanodots and application as passivation/point contact at the In{sub 2}S{sub 3}/Cu(In,Ga)(S,Se){sub 2} junction in thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Yanpeng Fu

2012-03-15

The spray ion layer gas reaction (Spray-ILGAR) technique produces homogeneous compact metal chalcogenide films used as buffer layers for thin film solar cells with high efficiencies. It was a great challenge to elaborate this method for the deposition of nanodots. This thesis shows that high quality, uncoated, monodisperse and sub 10 nm ZnS nanodots with controllable dot density and size (to some extend) can be prepared at the requisite low temperature by this sequential, cyclic and low cost method which can be scaled up for industrial in-line production. In addition, by this Spray-ILGAR technique, a structured buffer layer, composed of ZnS nanodots covered by a closed In{sub 2}S{sub 3} film, has been introduced as a defect passivation / point contact layer at the Cu(In,Ga)(S,Se){sub 2} (CIGSSe) absorber interface. The ZnS nanodots are deposited starting from nebulizing an aqueous Zn acetylacetonate (Zn(acac){sub 2}) solution followed by H{sub 2}S sulfurization. The unique sequential process allows the formation of the nanodot film with good properties. The choice of the process parameters (e.g. solvent, temperature, concentration) allows the control of particle density and partly also of particle size. These nanodots are rather homogeneous in size, shape and composition, and tend to keep maximum distance from each other. In contrast, ZnS nanodots deposited by a continuous spray chemical vapor deposition (Spray-CVD) are irregular in shape with inclusions of ZnO. The mechanism behind the ZnS nanodots formation is studied in two ways. On one hand, the decomposition mechanism of Zn(acac){sub 2} on the hot substrate in the spray based processes is studied by means of in-situ mass spectroscopy. On the other hand, by interpretation of the scanning electron microscopy (SEM), energy filtered transmission electron microscopy results (EF-TEM), it is possible to elucidate the self-limiting growth of ZnS nanodots in the Spray-ILGAR and Spray-CVD processes. The fundamental

Formation of thin film of negative and positive ions

Energy Technology Data Exchange (ETDEWEB)

Horino, Yuji; Tsubouchi, Nobuteru [Osaka National Research Inst., AIST, Ikeda (Japan)

1997-02-01

Positive and negative ions deposition apparatus (PANDA) was developed by us as new synthesis method of materials. This apparatus is able to form simultaneously or independently the positive and negative ion beams to separate the mass and to control the energy from 10 eV to 3 KeV. It consists of positive beam line, negative beam line and a film formation room. Microwave discharge ion source and plasma sputtering source are used as the positive ion and the negative ion source, respectably. The beam generation test was carried out. The negative ion beams were generated from silicon wafer (target) and measured by MS. The mass spectrum of extracted negative silicon beams showed mass number 28, 29, and 30 of Si{sup -} and Si{sub 2}{sup -}. It proved that ions were separated in the isotope level. Therefore, film, it`s purity is isotope level, may be formed by such ion beams. (S.Y.)

Sodium hydroxide injection passivation work for the reactor water clean-up system in a new ABWR plant

International Nuclear Information System (INIS)

Wen, Tung-Jen; Lu, Ju-Huang

2012-09-01

Several studies have identified that Co-58 and Co-60 as the primary source of radiation build up on out-of-core components in new BWR plants. The deposition rate of Co on stainless steel and carbon steel is shown to be controlled mainly by the thickness of oxide films and its morphology formed through pretreatment. The passivation treatment was implemented accordingly at Lungmen unit 1 in an ABWR plant in September 2010. It is determined that the passivation conditions should be maintained at the temperature of 180∼230 deg. C, pH of 8.0∼8.5 and dissolved oxygen content over 400 ppb. The films would provide effective protection against radioactive deposition. The application of the pre-filming process on piping before the pre-operation is done during the flow induced vibration test (FIV) period. The protectiveness of stable magnetite can be increased by the pH control under the specific condition. The pre-filming control process and evaluation of passivation effectiveness is discussed in detail based on the surface analysis of the passivated specimens. Many efforts have been devoted to sodium hydroxide injection method for pH control of the system through the filter demineralizer under smooth operation. A comparison of test specimens on the properties of oxide film formed between laboratory and in-plant tests through alkaline treatment are also shown in this report. (authors)

Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

2016-03-15

Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.