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Sample records for partially coalesced gan

  1. Partial coalescence from bubbles to drops

    KAUST Repository

    Zhang, F. H.; Thoraval, Marie-Jean; Thoroddsen, Sigurdur T; Taborek, P.

    2015-01-01

    the travel time of this wave mode on the bubble surface, we also show that the model is consistent with the experiments. This wavenumber is determined by both the global drainage as well as the interface shapes during the rapid coalescence in the neck

  2. Partial coalescence from bubbles to drops

    KAUST Repository

    Zhang, F. H.

    2015-10-07

    The coalescence of drops is a fundamental process in the coarsening of emulsions. However, counter-intuitively, this coalescence process can produce a satellite, approximately half the size of the original drop, which is detrimental to the overall coarsening. This also occurs during the coalescence of bubbles, while the resulting satellite is much smaller, approximately 10 %. To understand this difference, we have conducted a set of coalescence experiments using xenon bubbles inside a pressure chamber, where we can continuously raise the pressure from 1 up to 85 atm and thereby vary the density ratio between the inner and outer fluid, from 0.005 up to unity. Using high-speed video imaging, we observe a continuous increase in satellite size as the inner density is varied from the bubble to emulsion-droplet conditions, with the most rapid changes occurring as the bubble density grows up to 15 % of that of the surrounding liquid. We propose a model that successfully relates the satellite size to the capillary wave mode responsible for its pinch-off and the overall deformations from the drainage. The wavelength of the primary wave changes during its travel to the apex, with the instantaneous speed adjusting to the local wavelength. By estimating the travel time of this wave mode on the bubble surface, we also show that the model is consistent with the experiments. This wavenumber is determined by both the global drainage as well as the interface shapes during the rapid coalescence in the neck connecting the two drops or bubbles. The rate of drainage is shown to scale with the density of the inner fluid. Empirically, we find that the pinch-off occurs when 60 % of the bubble fluid has drained from it. Numerical simulations using the volume-of-fluid method with dynamic adaptive grid refinement can reproduce these dynamics, as well as show the associated vortical structure and stirring of the coalescing fluid masses. Enhanced stirring is observed for cases with second

  3. Factors governing partial coalescence in oil-in-water emulsions

    NARCIS (Netherlands)

    Fredrick, E.; Walstra, P.; Dewettinck, K.

    2010-01-01

    The consequences of the instability mechanism partial coalescence in oil-in-water food emulsions show a discrepancy. On the one hand, it needs to be avoided in order to achieve an extended shelf life in food products like sauces, creams and several milk products. On the other hand, during the

  4. Partial coalescence as a tool to control sensory perception of emulsions

    NARCIS (Netherlands)

    Benjamins, J.; Vingerhoeds, M.H.; Zoet, F.D.; Hoog, de E.H.A.; Aken, van G.A.

    2009-01-01

    This study evaluates the role of partial coalescence of whey protein-stabilized emulsions on sensory perception. The selection of fats was restricted to vegetable fats that are essentially melted at oral temperatures. The sensitivity to partial coalescence was controlled by a variation in the fat

  5. Assessment of partial coalescence in whippable oil-in-water food emulsions.

    Science.gov (United States)

    Petrut, Raul Flaviu; Danthine, Sabine; Blecker, Christophe

    2016-03-01

    Partial coalescence influences to a great extent the properties of final food products such as ice cream and whipped toppings. In return, the partial coalescence occurrence and development are conditioned, in such systems, by the emulsion's intrinsic properties (e.g. solid fat content, fat crystal shape and size), formulation (e.g. protein content, surfactants presence) and extrinsic factors (e.g. cooling rate, shearing). A set of methods is available for partial coalescence investigation and quantification. These methods are critically reviewed in this paper, balancing the weaknesses of the methods in terms of structure alteration (for turbidity, dye dilution, etc.) and assumptions made for mathematical models (for particle size determination) with their advantages (good repeatability, high sensitivity, etc.). With the methods proposed in literature, the partial coalescence investigations can be conducted quantitatively and/or qualitatively. Good correlation were observed between some of the quantitative methods such as dye dilution, calorimetry, fat particle size; while a poor correlation was found in the case of solvent extraction method with other quantitative methods. The most suitable way for partial coalescence quantification was implied to be the fat particle size method, which would give results with a high degree of confidence if used in combination with a microscopic technique for the confirmation of partial coalescence as the main destabilization mechanism. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Recombination dynamics in coalesced a-plane GaN ELO structures investigated by high spatially and ps-time-resolved cathodoluminescence microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bastek, B.; Bertram, F.; Christen, J. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Wernicke, T.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technical University, Berlin (Germany)

    2008-07-01

    The characteristic epitaxial lateral overgrowth (ELO) domains of fully coalesced a-plane GaN layers were directly imaged by highly spatially and spectrally resolved cathodoluminescence microscopy (CL) at 5 K. The patterned layers were grown by MOVPE on r-plane sapphire substrate and stripe masks oriented in the [01 anti 10] direction. In the area of coherent growth (I) the broad basal plane stacking fault (BSF) emission centered at 3.41 eV dominates the spectra. Also in the region (II) of coalescence the BSF luminescence dominates, however, the intensity increases by one order of magnitude compared to area (I). In complete contrast, in the stripes associated with the laterally grown domains (III) in [0001] direction, exclusively an intense and sharp (D{sup 0},X) emission at 3.475 eV is observed. ps-time-resolved CL of the free excitons (FX) recorded from this domains (III) decays bi-exponentially. The initial lifetime of 180 ps is primarily given by the capture of FX by impurities to form bound excitons (BE). With rising temperature this capture time constant decreases as T{sup -1/4} and reaches a minimum of 104 ps at T=60 K. Above 60 K, i.e. when FX starts to dominate the BEs, the lifetime increases rapidly to a value of 240 ps for 300 K.

  7. GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

    Science.gov (United States)

    Han, Kefeng; Zhu, Lin

    2017-09-01

    In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

  8. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bartłomiej; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Sankowska, Iwona [The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)

    2016-09-15

    Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.

  9. A weighted multiple-relaxation-time lattice Boltzmann method for multiphase flows and its application to partial coalescence cascades

    Science.gov (United States)

    Fakhari, Abbas; Bolster, Diogo; Luo, Li-Shi

    2017-07-01

    We present a lattice Boltzmann method (LBM) with a weighted multiple-relaxation-time (WMRT) collision model and an adaptive mesh refinement (AMR) algorithm for direct numerical simulation of two-phase flows in three dimensions. The proposed WMRT model enhances the numerical stability of the LBM for immiscible fluids at high density ratios, particularly on the D3Q27 lattice. The effectiveness and efficiency of the proposed WMRT-LBM-AMR is validated through simulations of (a) buoyancy-driven motion and deformation of a gas bubble rising in a viscous liquid; (b) the bag-breakup mechanism of a falling drop; (c) crown splashing of a droplet on a wet surface; and (d) the partial coalescence mechanism of a liquid drop at a liquid-liquid interface. The numerical simulations agree well with available experimental data and theoretical approximations where applicable.

  10. Monolithic photonic crystals created by partial coalescence of core-shell particles.

    Science.gov (United States)

    Lee, Joon-Seok; Lim, Che Ho; Yang, Seung-Man; Kim, Shin-Hyun

    2014-03-11

    Colloidal crystals and their derivatives have been intensively studied and developed during the past two decades due to their unique photonic band gap properties. However, complex fabrication procedures and low mechanical stability severely limit their practical uses. Here, we report stable photonic structures created by using colloidal building blocks composed of an inorganic core and an organic shell. The core-shell particles are convectively assembled into an opal structure, which is then subjected to thermal annealing. During the heat treatment, the inorganic cores, which are insensitive to heat, retain their regular arrangement in a face-centered cubic lattice, while the organic shells are partially fused with their neighbors; this forms a monolithic structure with high mechanical stability. The interparticle distance and therefore stop band position are precisely controlled by the annealing time; the distance decreases and the stop band blue shifts during the annealing. The composite films can be further treated to give a high contrast in the refractive index. The inorganic cores are selectively removed from the composite by wet etching, thereby providing an organic film containing regular arrays of air cavities. The high refractive index contrast of the porous structure gives rise to pronounced structural colors and high reflectivity at the stop band position.

  11. Partially filled intermediate band of Cr-doped GaN films

    International Nuclear Information System (INIS)

    Sonoda, S.

    2012-01-01

    We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

  12. Control of Partial Coalescence of Self-Assembled Metal Nano-Particles across Lyotropic Liquid Crystals Templates towards Long Range Meso-Porous Metal Frameworks Design

    Directory of Open Access Journals (Sweden)

    Ludovic F. Dumée

    2015-10-01

    Full Text Available The formation of purely metallic meso-porous metal thin films by partial interface coalescence of self-assembled metal nano-particles across aqueous solutions of Pluronics triblock lyotropic liquid crystals is demonstrated for the first time. Small angle X-ray scattering was used to study the influence of the thin film composition and processing conditions on the ordered structures. The structural characteristics of the meso-structures formed demonstrated to primarily rely on the lyotropic liquid crystal properties while the nature of the metal nano-particles used as well as the their diameters were found to affect the ordered structure formation. The impact of the annealing temperature on the nano-particle coalescence and efficiency at removing the templating lyotropic liquid crystals was also analysed. It is demonstrated that the lyotropic liquid crystal is rendered slightly less thermally stable, upon mixing with metal nano-particles and that low annealing temperatures are sufficient to form purely metallic frameworks with average pore size distributions smaller than 500 nm and porosity around 45% with potential application in sensing, catalysis, nanoscale heat exchange, and molecular separation.

  13. Growth on nonpolar and semipolar GaN: The substrate dilemma

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, T.; Weyers, M. [Ferdinand-Braun-Institute, Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institute, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2009-07-01

    Growth of nonpolar and semipolar GaN is very promising for achieving green laser diodes (LDs). However, the choice of the substrate is a difficult one: Heteroepitaxial growth on sapphire, SiC, LiAlO{sub 2} yields GaN films with a poor surface quality and high defect densities. On the other hand non- and semipolar bulk GaN substrates provide excellent crystal quality, but are so far only available in very small sizes. In this paper hetero- and homoepitaxial growth is compared. For all heteroepitaxially grown semi- and nonpolar GaN layers threading dislocations (TD) and basal plane stacking faults (BSF) can be found. There are four possible mechanisms for the generation of BSF: Growth of the N-polar basal plane, formation during nucleation at substrate steps, formation at the coalescence front of differently stacked nucleation islands, and generation at planar defects occurring in m-plane GaN on LiAlO{sub 2}. BSF induce surface roughening and are associated with partial dislocations causing nonradiative recombination. Thus they affect the performance of devices. We show that BSFs and TDs can be reduced by epitaxial lateral overgrowth resulting in several micrometer wide defect free areas. However, for LEDs larger defect-free areas are required. GaN layers grown on bulk GaN substrates exhibit a high crystal quality, but show in many cases long-range surface structures with a height of {approx}1{mu}m.

  14. Gas bubble coalescence

    International Nuclear Information System (INIS)

    Ganeev, G.Z.; Turkebaev, T.Eh.; Kadyrov, Kh.G.

    2001-01-01

    Analysis of gaseous pores coalescence in area of the straggling of helium atoms is given. The considered coalescence is based on both the Brownian movement and the migration within the stress gradient. (author)

  15. Hydrodynamic effects on coalescence.

    Energy Technology Data Exchange (ETDEWEB)

    Dimiduk, Thomas G.; Bourdon, Christopher Jay; Grillet, Anne Mary; Baer, Thomas A.; de Boer, Maarten Pieter; Loewenberg, Michael (Yale University, New Haven, CT); Gorby, Allen D.; Brooks, Carlton, F.

    2006-10-01

    The goal of this project was to design, build and test novel diagnostics to probe the effect of hydrodynamic forces on coalescence dynamics. Our investigation focused on how a drop coalesces onto a flat surface which is analogous to two drops coalescing, but more amenable to precise experimental measurements. We designed and built a flow cell to create an axisymmetric compression flow which brings a drop onto a flat surface. A computer-controlled system manipulates the flow to steer the drop and maintain a symmetric flow. Particle image velocimetry was performed to confirm that the control system was delivering a well conditioned flow. To examine the dynamics of the coalescence, we implemented an interferometry capability to measure the drainage of the thin film between the drop and the surface during the coalescence process. A semi-automated analysis routine was developed which converts the dynamic interferogram series into drop shape evolution data.

  16. Coalescence of magnetic islands

    International Nuclear Information System (INIS)

    Pellat, R.

    1982-01-01

    The paper gives the analytical theory of the coalescence instability and of a new, one island, instability. These instabilities are expected to be relevant for the disruptions observed in Tokamak experiments and astrophysical plasmas

  17. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  18. GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

    Science.gov (United States)

    Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

    2015-03-17

    This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

  19. Fast "coalescent" simulation

    Directory of Open Access Journals (Sweden)

    Wall Jeff D

    2006-03-01

    Full Text Available Abstract Background The amount of genome-wide molecular data is increasing rapidly, as is interest in developing methods appropriate for such data. There is a consequent increasing need for methods that are able to efficiently simulate such data. In this paper we implement the sequentially Markovian coalescent algorithm described by McVean and Cardin and present a further modification to that algorithm which slightly improves the closeness of the approximation to the full coalescent model. The algorithm ignores a class of recombination events known to affect the behavior of the genealogy of the sample, but which do not appear to affect the behavior of generated samples to any substantial degree. Results We show that our software is able to simulate large chromosomal regions, such as those appropriate in a consideration of genome-wide data, in a way that is several orders of magnitude faster than existing coalescent algorithms. Conclusion This algorithm provides a useful resource for those needing to simulate large quantities of data for chromosomal-length regions using an approach that is much more efficient than traditional coalescent models.

  20. ULTRAMASSIVE BLACK HOLE COALESCENCE

    International Nuclear Information System (INIS)

    Khan, Fazeel Mahmood; Holley-Bockelmann, Kelly; Berczik, Peter

    2015-01-01

    Although supermassive black holes (SMBHs) correlate well with their host galaxies, there is an emerging view that outliers exist. Henize 2-10, NGC 4889, and NGC 1277 are examples of SMBHs at least an order of magnitude more massive than their host galaxy suggests. The dynamical effects of such ultramassive central black holes is unclear. Here, we perform direct N-body simulations of mergers of galactic nuclei where one black hole is ultramassive to study the evolution of the remnant and the black hole dynamics in this extreme regime. We find that the merger remnant is axisymmetric near the center, while near the large SMBH influence radius, the galaxy is triaxial. The SMBH separation shrinks rapidly due to dynamical friction, and quickly forms a binary black hole; if we scale our model to the most massive estimate for the NGC 1277 black hole, for example, the timescale for the SMBH separation to shrink from nearly a kiloparsec to less than a parsec is roughly 10 Myr. By the time the SMBHs form a hard binary, gravitational wave emission dominates, and the black holes coalesce in a mere few Myr. Curiously, these extremely massive binaries appear to nearly bypass the three-body scattering evolutionary phase. Our study suggests that in this extreme case, SMBH coalescence is governed by dynamical friction followed nearly directly by gravitational wave emission, resulting in a rapid and efficient SMBH coalescence timescale. We discuss the implications for gravitational wave event rates and hypervelocity star production

  1. Bubble coalescence in breathing DNA

    DEFF Research Database (Denmark)

    Novotný, Tomas; Pedersen, Jonas Nyvold; Ambjörnsson, Tobias

    2007-01-01

    We investigate the coalescence of two DNA bubbles initially located at weak segments and separated by a more stable barrier region in a designed construct of double-stranded DNA. The characteristic time for bubble coalescence and the corresponding distribution are derived, as well as the distribu...... vicious walkers in opposite potentials....

  2. Multiscale Simulations of Magnetic Island Coalescence

    Science.gov (United States)

    Dorelli, John C.

    2010-01-01

    We describe a new interactive parallel Adaptive Mesh Refinement (AMR) framework written in the Python programming language. This new framework, PyAMR, hides the details of parallel AMR data structures and algorithms (e.g., domain decomposition, grid partition, and inter-process communication), allowing the user to focus on the development of algorithms for advancing the solution of a systems of partial differential equations on a single uniform mesh. We demonstrate the use of PyAMR by simulating the pairwise coalescence of magnetic islands using the resistive Hall MHD equations. Techniques for coupling different physics models on different levels of the AMR grid hierarchy are discussed.

  3. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  4. Structure guided GANs

    Science.gov (United States)

    Cao, Feidao; Zhao, Huaici; Liu, Pengfei

    2017-11-01

    Generative adversarial networks (GANs) has achieved success in many fields. However, there are some samples generated by many GAN-based works, whose structure is ambiguous. In this work, we propose Structure Guided GANs that introduce structural similar into GANs to overcome the problem. In order to achieve our goal, we introduce an encoder and a decoder into a generator to design a new generator and take real samples as part of the input of a generator. And we modify the loss function of the generator accordingly. By comparison with WGAN, experimental results show that our proposed method overcomes largely sample structure ambiguous and can generate higher quality samples.

  5. Le phénomène de coalescence. Etude bibliographique Coalescence Phenomena. A Review

    Directory of Open Access Journals (Sweden)

    Palermo T.

    2006-11-01

    by the drainage and rupture of the thin liquid film of continuous phase separating it from its homophase or from another drop. Let us consider the coalescence of a drop at an interface (Fig. I. 3. When the distance h between the drop and the interface becomes less or equal to the radius Rd of the drop (h < ou = Rd, the pressure inside the film increases. This pressure is responsible for the apparent immobilization of the drop, its deformation, and the drainage of the film. Depending on the case, the film can then reach either an extreme thickness hf or a critical thickness delta beyond which the film becomes unstable and breaks down. In the latter case there is coalescence. Experimental research has shown the existence of :(a A statistical distribution of the coalescence time (Fig. I. 6. This distribution seems to be linked to the presence of impurities in the systems investigated. (b A phenomenon of partial coalescence (Fig. I. 7. The coalescence of a drop generally occurs in several stages. The experimental results of several authors concerning the influence of physical and physicochemical parameters on the coalescence time are given in Table I. 1. Quantitative as well as qualitative differences can be seen (e. g. influence of the diameter of the drops. Drainage of the filmReynolds model (Fig. II. 1 : We consider the flow of a thin liquid film of viscosity µc between two parallel rigid disks of radius R and area A. The disks are pulled together by an external force F. The thinning rate Vre of the film and the coalescence time tau(re are given by. In this model, the drainage of a film is governed by the viscous dissipations inside this film. In the more general case of a flat or curved film of constant thickness h, these expressions become here n, the number of immobile interfaces, can take the value 0,1 or 2 (Fig. II. 2. The mobilityor immobilityof the interfaces are defined by the following boundary conditions in which vr is the radial component of the fluid

  6. Role of the ganSPQAB Operon in Degradation of Galactan by Bacillus subtilis.

    Science.gov (United States)

    Watzlawick, Hildegard; Morabbi Heravi, Kambiz; Altenbuchner, Josef

    2016-10-15

    found as the side chain of the rhamnogalacturonan type I complex in pectin, has remained partially studied. Here, we investigated the galactan utilization system consisting of the ganSPQAB operon and its regulator ganR This study improves our knowledge of the carbohydrate degradation systems of B. subtilis, especially the pectin degradation systems. Moreover, the galactan-degrading enzymes may be exploited for the production of galacto-oligosaccharides, which are used as prebiotic substances in the food industry. Copyright © 2016, American Society for Microbiology. All Rights Reserved.

  7. Explosive coalescence of Magnetic Islands

    International Nuclear Information System (INIS)

    Tajima, T.; Sakai, J.I.

    1985-04-01

    An explosive reconnection process associated with nonlinear evolution of the coalescence instability is found through studies of particle and magnetohydrodynamic simulations. The explosive coalescence is a self-similar process of magnetic collapse, in which the magnetic and electrostatic energies and temperatures explode toward the explosion time t 0 as (t 0 -t)/sup 8/3/,(t 0 -t) -4 , and (t 0 -t)/sup -8/3/, respectively. Ensuing amplitude oscillations in these quantities are identified by deriving an equation of motion for the scale factor in the Sagdeev potential

  8. Dislocation mediated alignment during metal nanoparticle coalescence

    International Nuclear Information System (INIS)

    Lange, A.P.; Samanta, A.; Majidi, H.; Mahajan, S.; Ging, J.; Olson, T.Y.; Benthem, K. van; Elhadj, S.

    2016-01-01

    Dislocation mediated alignment processes during gold nanoparticle coalescence were studied at low and high temperatures using molecular dynamics simulations and transmission electron microscopy. Particles underwent rigid body rotations immediately following attachment in both low temperature (500 K) simulated coalescence events and low temperature (∼315 K) transmission electron microscopy beam heating experiments. In many low temperature simulations, some degree of misorientation between particles remained after rigid body rotations, which was accommodated by grain boundary dislocation nodes. These dislocations were either sessile and remained at the interface for the duration of the simulation or dissociated and cross-slipped through the adjacent particles, leading to improved co-alignment. Minimal rigid body rotations were observed during or immediately following attachment in high temperature (1100 K) simulations, which is attributed to enhanced diffusion at the particles' interface. However, rotation was eventually induced by {111} slip on planes parallel to the neck groove. These deformation modes led to the formation of single and multi-fold twins whose structures depended on the initial orientation of the particles. The driving force for {111} slip is attributed to high surface stresses near the intersection of low energy {111} facets in the neck region. The details of this twinning process were examined in detail using simulated trajectories, and the results reveal possible mechanisms for the nucleation and propagation of Shockley partials on consecutive planes. Deformation twinning was also observed in-situ using transmission electron microscopy, which resulted in the co-alignment of a set of the particles' {111} planes across their grain boundary and an increase in their dihedral angle. This constitutes the first detailed experimental observation of deformation twinning during nanoparticle coalescence, validating simulation results presented here and

  9. Z L GAN

    Indian Academy of Sciences (India)

    Z L GAN. Articles written in Sadhana. Volume 43 Issue 4 April 2018 pp 59. Effect of scale size, orientation type and dispensing method on void formation in the CUF encapsulation of BGA · AIZAT ABAS FEI CHONG NG Z L GAN M H H ISHAK M Z ABDULLAH GEAN YUEN CHONG · More Details Abstract Fulltext PDF.

  10. Coalescence dynamics of mobile and immobile fluid interfaces

    KAUST Repository

    Vakarelski, Ivan Uriev

    2018-01-12

    Coalescence dynamics between deformable bubbles and droplets can be dramatically affected by the mobility of the interfaces with fully tangentially mobile bubble-liquid or droplet-liquid interfaces expected to accelerate the coalescence by orders of magnitudes. However, there is a lack of systematic experimental investigations that quantify this effect. By using high speed camera imaging we examine the free rise and coalescence of small air-bubbles (100 to 1300 μm in diameter) with a liquid interface. A perfluorocarbon liquid, PP11 is used as a model liquid to investigate coalescence dynamics between fully-mobile and immobile deformable interfaces. The mobility of the bubble surface was determined by measuring the terminal rise velocity of small bubbles rising at Reynolds numbers, Re less than 0.1 and the mobility of free PP11 surface by measuring the deceleration kinetics of the small bubble toward the interface. Induction or film drainage times of a bubble at the mobile PP11-air surface were found to be more than two orders of magnitude shorter compared to the case of bubble and an immobile PP11-water interface. A theoretical model is used to illustrate the effect of hydrodynamics and interfacial mobility on the induction time or film drainage time. The results of this study are expected to stimulate the development of a comprehensive theoretical model for coalescence dynamics between two fully or partially mobile fluid interfaces.

  11. The Bacterial Sequential Markov Coalescent.

    Science.gov (United States)

    De Maio, Nicola; Wilson, Daniel J

    2017-05-01

    Bacteria can exchange and acquire new genetic material from other organisms directly and via the environment. This process, known as bacterial recombination, has a strong impact on the evolution of bacteria, for example, leading to the spread of antibiotic resistance across clades and species, and to the avoidance of clonal interference. Recombination hinders phylogenetic and transmission inference because it creates patterns of substitutions (homoplasies) inconsistent with the hypothesis of a single evolutionary tree. Bacterial recombination is typically modeled as statistically akin to gene conversion in eukaryotes, i.e. , using the coalescent with gene conversion (CGC). However, this model can be very computationally demanding as it needs to account for the correlations of evolutionary histories of even distant loci. So, with the increasing popularity of whole genome sequencing, the need has emerged for a faster approach to model and simulate bacterial genome evolution. We present a new model that approximates the coalescent with gene conversion: the bacterial sequential Markov coalescent (BSMC). Our approach is based on a similar idea to the sequential Markov coalescent (SMC)-an approximation of the coalescent with crossover recombination. However, bacterial recombination poses hurdles to a sequential Markov approximation, as it leads to strong correlations and linkage disequilibrium across very distant sites in the genome. Our BSMC overcomes these difficulties, and shows a considerable reduction in computational demand compared to the exact CGC, and very similar patterns in simulated data. We implemented our BSMC model within new simulation software FastSimBac. In addition to the decreased computational demand compared to previous bacterial genome evolution simulators, FastSimBac provides more general options for evolutionary scenarios, allowing population structure with migration, speciation, population size changes, and recombination hotspots. FastSimBac is

  12. Electrohydrodynamic coalescence of droplets using an embedded potential flow model

    Science.gov (United States)

    Garzon, M.; Gray, L. J.; Sethian, J. A.

    2018-03-01

    The coalescence, and subsequent satellite formation, of two inviscid droplets is studied numerically. The initial drops are taken to be of equal and different sizes, and simulations have been carried out with and without the presence of an electrical field. The main computational challenge is the tracking of a free surface that changes topology. Coupling level set and boundary integral methods with an embedded potential flow model, we seamlessly compute through these singular events. As a consequence, the various coalescence modes that appear depending upon the relative ratio of the parent droplets can be studied. Computations of first stage pinch-off, second stage pinch-off, and complete engulfment are analyzed and compared to recent numerical studies and laboratory experiments. Specifically, we study the evolution of bridge radii and the related scaling laws, the minimum drop radii evolution from coalescence to satellite pinch-off, satellite sizes, and the upward stretching of the near cylindrical protrusion at the droplet top. Clear evidence of partial coalescence self-similarity is presented for parent droplet ratios between 1.66 and 4. This has been possible due to the fact that computational initial conditions only depend upon the mother droplet size, in contrast with laboratory experiments where the difficulty in establishing the same initial physical configuration is well known. The presence of electric forces changes the coalescence patterns, and it is possible to control the satellite droplet size by tuning the electrical field intensity. All of the numerical results are in very good agreement with recent laboratory experiments for water droplet coalescence.

  13. High-quality GaN epitaxially grown on Si substrate with serpentine channels

    Science.gov (United States)

    Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

    2018-06-01

    A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

  14. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. GaN epilayers on nanopatterned GaN/Si(1 1 1) templates: Structural and optical characterization

    International Nuclear Information System (INIS)

    Wang, L.S.; Tripathy, S.; Wang, B.Z.; Chua, S.J.

    2006-01-01

    Template-based nanoscale epitaxy has been explored to realize high-quality GaN on Si(1 1 1) substrates. We have employed polystyrene-based nanosphere lithography to form the nano-hole array patterns on GaN/Si(1 1 1) template and then, subsequent regrowth of GaN is carried out by metalorganic chemical vapor deposition (MOCVD). During the initial growth stage of GaN on such nanopatterned substrates, we have observed formation of nanoislands with hexagonal pyramid shape due to selective area epitaxy. With further epitaxial regrowth, these nanoislands coalesce and form continuous GaN film. The overgrown GaN on patterned and non-patterned regions is characterized by high-resolution X-ray diffraction (HRXRD) and high-spatial resolution optical spectroscopic methods. Micro-photoluminescence (PL), micro-Raman scattering and scanning electron microscopy (SEM) have been used to assess the microstructural and optical properties of GaN. Combined PL and Raman data analyses show improved optical quality when compared to GaN simultaneously grown on non-patterned bulk Si(1 1 1). Such thicker GaN templates would be useful to achieve III-nitride-based opto- and electronic devices integrated on Si substrates

  16. Arrested of coalescence of emulsion droplets of arbitrary size

    Science.gov (United States)

    Mbanga, Badel L.; Burke, Christopher; Blair, Donald W.; Atherton, Timothy J.

    2013-03-01

    With applications ranging from food products to cosmetics via targeted drug delivery systems, structured anisotropic colloids provide an efficient way to control the structure, properties and functions of emulsions. When two fluid emulsion droplets are brought in contact, a reduction of the interfacial tension drives their coalescence into a larger droplet of the same total volume and reduced exposed area. This coalescence can be partially or totally hindered by the presence of nano or micron-size particles that coat the interface as in Pickering emulsions. We investigate numerically the dependance of the mechanical stability of these arrested shapes on the particles size, their shape anisotropy, their polydispersity, their interaction with the solvent, and the particle-particle interactions. We discuss structural shape changes that can be induced by tuning the particles interactions after arrest occurs, and provide design parameters for the relevant experiments.

  17. Growth and characterization of Fe nanostructures on GaN

    International Nuclear Information System (INIS)

    Honda, Yuya; Hayakawa, Satoko; Hasegawa, Shigehiko; Asahi, Hajime

    2009-01-01

    We have investigated the growth of Fe nanostructures on GaN(0 0 0 1) substrates at room temperature using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and superconducting quantum interference device magnetometer. Initially, a ring RHEED pattern appears, indicating the growth of polycrystalline α-Fe. At around 0.5 nm deposition, the surface displays a transmission pattern from α-Fe films with the epitaxial relationship of Fe(1 1 0)//GaN(0 0 0 1) and Fe[1 -1 1]//GaN[1 1 -2 0] (Kurdjumov-Sachs (KS) orientational relationship). Further deposition to 1 nm results in the appearance of a new spot pattern together with the pattern from domains with the KS orientation relationship. The newly observed pattern shows that Fe layers are formed with the epitaxial relationship of Fe(1 1 0)//GaN(0 0 0 1) and Fe[0 0 1]//GaN[1 1 -2 0] (Nishiyama-Wasserman (NW) orientational relationship). From STM images for Fe layers with the KS and NW orientational relationships, it can be seen that Fe layers with the KS relationship consist of round-shaped Fe nanodots with below 7 nm in average diameter. These nanodots coalesce to form nanodots elongating along the Fe[1 0 0] direction, and they have the KS orientational relationship. Elongated Fe nanodots with the NW relationship show ferromagnetism while round-shaped Fe nanodots with the KS relationship show super-paramagnetic behavior. We will discuss their magnetic properties in connection with the change in crystalline configurations of nanodots.

  18. Bunch coalescing in the Fermilab Main Ring

    International Nuclear Information System (INIS)

    Wildman, D.; Martin, P.; Meisner, K.; Miller, H.W.

    1987-01-01

    A new RF system has been installed in the Fermilab Main Ring to coalesce up to 13 individual bunches of protons or antiprotons into a single high-intensity bunch. The coalescing process consists of adiabatically reducing the h=1113 Main Ring RF voltage from 1 MV to less than 1 kV, capturing the debunched beam in a linearized h=53 and h=106 bucket, rotating for a quarter of a synchrotron oscillation period, and then recapturing the beam in a single h=1113 bucket. The new system is described and the results of recent coalescing experiments are compared with computer-generated particle tracking simulations

  19. Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

    Science.gov (United States)

    Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

    2006-04-01

    By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

  20. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ansah-Antwi, KwaDwo Konadu, E-mail: kakadee@gmail.com; Chua, Soo Jin [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, E4-5-45, 4 Engineering Drive 3, Singapore 117576 (Singapore); Soh, Chew Beng [Singapore Institute of Technology, 10 Dover Drive, Singapore 138683 (Singapore); Liu, Hongfei [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore)

    2015-11-15

    The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

  1. Node insertion in Coalescence Fractal Interpolation Function

    International Nuclear Information System (INIS)

    Prasad, Srijanani Anurag

    2013-01-01

    The Iterated Function System (IFS) used in the construction of Coalescence Hidden-variable Fractal Interpolation Function (CHFIF) depends on the interpolation data. The insertion of a new point in a given set of interpolation data is called the problem of node insertion. In this paper, the effect of insertion of new point on the related IFS and the Coalescence Fractal Interpolation Function is studied. Smoothness and Fractal Dimension of a CHFIF obtained with a node are also discussed

  2. Coalescence preference in dense packing of bubbles

    Science.gov (United States)

    Kim, Yeseul; Gim, Bopil; Gim, Bopil; Weon, Byung Mook

    2015-11-01

    Coalescence preference is the tendency that a merged bubble from the contact of two original bubbles (parent) tends to be near to the bigger parent. Here, we show that the coalescence preference can be blocked by densely packing of neighbor bubbles. We use high-speed high-resolution X-ray microscopy to clearly visualize individual coalescence phenomenon which occurs in micro scale seconds and inside dense packing of microbubbles with a local packing fraction of ~40%. Previous theory and experimental evidence predict a power of -5 between the relative coalescence position and the parent size. However, our new observation for coalescence preference in densely packed microbubbles shows a different power of -2. We believe that this result may be important to understand coalescence dynamics in dense packing of soft matter. This work (NRF-2013R1A22A04008115) was supported by Mid-career Researcher Program through NRF grant funded by the MEST and also was supported by Ministry of Science, ICT and Future Planning (2009-0082580) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry and Education, Science and Technology (NRF-2012R1A6A3A04039257).

  3. Studies on electronic structure of GaN(0001) surface

    CERN Document Server

    Xie Chang Kun; Xu Fa Qiang; Deng Rui; Liu Feng; Yibulaxin, K

    2002-01-01

    An electronic structure investigation on GaN(0001) is reported. The authors employ a full-potential linearized augmented plane-wave (FPLAPW) approach to calculate the partial density of state, which is in agreement with previous experimental results. The effects of the Ga3d semi-core levels on the electronic structure of GaN are discussed. The valence-electronic structure of the wurtzite GaN(0001) surface is investigated using synchrotron radiation excited angle-resolved photoemission spectroscopy. The bulk bands dispersion along GAMMA A direction in the Brillouin zones is measured using normal-emission spectra by changing photon-energy. The band structure derived from authors' experimental data is compared well with the results of authors' FPLAPW calculation. Furthermore, off-normal emission spectra are also measured along the GAMMA K and GAMMA M directions. Two surface states are identified, and their dispersions are characterized

  4. Bubble coalescence in a Newtonian fluid

    Science.gov (United States)

    Garg, Vishrut; Basaran, Osman

    2017-11-01

    Bubble coalescence plays a central role in the hydrodynamics of gas-liquid systems such as bubble column reactors, spargers, and foams. Two bubbles approaching each other at velocity V coalesce when the thin film between them ruptures, which is often the rate-limiting step. Experimental studies of this system are difficult, and recent works provide conflicting results on the effect of V on coalescence times. We simulate the head-on approach of two bubbles of equal radii R in an incompressible Newtonian fluid (density ρ, viscosity μ, and surface tension σ) by solving numerically the free boundary problem comprised of the Navier Stokes and continuity equations. Simulations are made challenging by the existence of highly disparate lengthscales, i.e. film thickness and drop radii, which are resolved by using the method of elliptic mesh generation. For a given liquid, the bubbles are shown to coalesce for all velocities below a critical value. The effects of Ohnesorge number Oh = μ /√{ ρσR } on coalescence time and critical velocity are also investigated.

  5. Coala: an R framework for coalescent simulation.

    Science.gov (United States)

    Staab, Paul R; Metzler, Dirk

    2016-06-15

    Simulation programs based on the coalescent efficiently generate genetic data according to a given model of evolution. We present coala, an R package for calling coalescent simulators with a unified syntax. It can execute simulations with several programs, calculate additional summary statistics and combine multiple simulations to create biologically more realistic data. The package is publicly available on CRAN and on https://github.com/statgenlmu/coala under the conditions of the MIT license. metzler@bio.lmu.de. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

  6. Cathodoluminescence studies of defects and piezoelectric fields in GaN

    International Nuclear Information System (INIS)

    Henley, S.

    2002-01-01

    High spatial resolution cathodoluminescence (CL) mapping studies were carried out in GaN based material systems similar to those used commercially in the manufacture of light emitting diodes (LED) and laser diodes (LD). The area of prime interest was the effect of defects in these materials, such as dislocations, on the luminescence production. For this purpose a field emission scanning electron microscope (SEM) was modified and calibrated so that cathodoluminescence studies could be carried out at temperatures down to 8K on thinned samples suitable for characterisation by transmission electron microscopy. An InGaN/GaN single quantum well (QW) similar to those used in the fabrication of short-wavelength GaN LEDs was studied. It was demonstrated that threading edge dislocations act as non-radiative recombination centres in this sample. It was estimated from CL maps and from computer simulations that these threading dislocations reduce the overall QW luminescence by at least 60% compared to that from a dislocation free sample. Is has also been shown that 'V-shaped' pits present reduce the QW luminescence production in this sample by a further 10% due to the missing QW material. The presence of a large piezoelectric field across the QW was shown to red shift the QW luminescence peak due to the quantum confined Stark effect (QCSE). It was possible to partially screen this field, under high intensity excitation, producing a blue shift of the QW peak. This blue shift was observed in CL and photoluminescence (PL) experiments. It is suggested that separation across the well of charge carriers of opposite signs screened the piezoelectric field. The blue shift of the QW luminescence was observed to remain after high electron dose irradiation in the SEM. This effect was not observed in PL measurements after high laser power exposure. The CL blue shift could be removed by irradiation with a UV lamp. It was shown that the minority carrier diffusion length (MCDL) increased from

  7. Free surface flows: coalescence, spreading and dewetting

    NARCIS (Netherlands)

    Hernandez Sanchez, J.F.

    2015-01-01

    Capillary and wetting phenomena are an essential part of nature. Its presence is noticed in many circumstances where solid and liquid surfaces come into contact. In this thesis different types of capillary free surface flows are studied. The topics discussed are mainly the coalescence of viscous

  8. Flow-induced coalescence in polydisperse systems

    Czech Academy of Sciences Publication Activity Database

    Fortelný, Ivan; Jůza, Josef

    2014-01-01

    Roč. 299, č. 10 (2014), s. 1213-1219 ISSN 1438-7492 R&D Projects: GA ČR GAP106/11/1069 Institutional support: RVO:61389013 Keywords : coalescence * polymer blends * polydisperse droplets Subject RIV: BK - Fluid Dynamics Impact factor: 2.661, year: 2014

  9. HIV classification using coalescent theory

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ming [Los Alamos National Laboratory; Letiner, Thomas K [Los Alamos National Laboratory; Korber, Bette T [Los Alamos National Laboratory

    2008-01-01

    Algorithms for subtype classification and breakpoint detection of HIV-I sequences are based on a classification system of HIV-l. Hence, their quality highly depend on this system. Due to the history of creation of the current HIV-I nomenclature, the current one contains inconsistencies like: The phylogenetic distance between the subtype B and D is remarkably small compared with other pairs of subtypes. In fact, it is more like the distance of a pair of subsubtypes Robertson et al. (2000); Subtypes E and I do not exist any more since they were discovered to be composed of recombinants Robertson et al. (2000); It is currently discussed whether -- instead of CRF02 being a recombinant of subtype A and G -- subtype G should be designated as a circulating recombination form (CRF) nd CRF02 as a subtype Abecasis et al. (2007); There are 8 complete and over 400 partial HIV genomes in the LANL-database which belong neither to a subtype nor to a CRF (denoted by U). Moreover, the current classification system is somehow arbitrary like all complex classification systems that were created manually. To this end, it is desirable to deduce the classification system of HIV systematically by an algorithm. Of course, this problem is not restricted to HIV, but applies to all fast mutating and recombining viruses. Our work addresses the simpler subproblem to score classifications of given input sequences of some virus species (classification denotes a partition of the input sequences in several subtypes and CRFs). To this end, we reconstruct ancestral recombination graphs (ARG) of the input sequences under restrictions determined by the given classification. These restritions are imposed in order to ensure that the reconstructed ARGs do not contradict the classification under consideration. Then, we find the ARG with maximal probability by means of Markov Chain Monte Carlo methods. The probability of the most probable ARG is interpreted as a score for the classification. To our

  10. Optimization of GaN Nanorod Growth Conditions for Coalescence Overgrowth

    Science.gov (United States)

    2016-02-04

    21, 2016 PI: Chih-Chung (C. C.) Yang, ccycc@ntu.edu.tw Graduate Institute of Photonics and Optoelectronics, National Taiwan University...nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy, Nano Lett. 10 (2010) 3355-3359. [16] W. Guo, A. Banerjee, P...Bhattacharya, B.S. Ooi, InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon , Appl. Phys. Lett. 98 (2011) 193102. [17] H.P.T. Nguyen, M

  11. Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

    2010-07-01

    Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

  12. Coalescence dynamics of mobile and immobile fluid interfaces

    KAUST Repository

    Vakarelski, Ivan Uriev; Manica, Rogerio; Li, Erqiang; Basheva, Elka S; Chan, Derek Y. C.; Thoroddsen, Sigurdur T.

    2018-01-01

    Coalescence dynamics between deformable bubbles and droplets can be dramatically affected by the mobility of the interfaces with fully tangentially mobile bubble-liquid or droplet-liquid interfaces expected to accelerate the coalescence by orders

  13. The coalescence instability in solar flares

    Science.gov (United States)

    Tajima, T.; Brunel, F.; Sakai, J.-I.; Vlahos, L.; Kundu, M. R.

    1985-01-01

    The nonlinear coalescence instability of current carrying solar loops can explain many of the characteristics of the solar flares such as their impulsive nature, heating and high energy particle acceleration, amplitude oscillations of electromagnetic and emission as well as the characteristics of two-dimensional microwave images obtained during a flare. The plasma compressibility leads to the explosive phase of loop coalescence and its overshoot results in amplitude oscillations in temperatures by adiabatic compression and decompression. It is noted that the presence of strong electric fields and super-Alfvenic flows during the course of the instability play an important role in the production of nonthermal particles. A qualitative explanation on the physical processes taking place during the nonlinear stages of the instability is given.

  14. The coalescence instability in solar flares

    International Nuclear Information System (INIS)

    Tajima, T.; Brunel, F.; Sakai, J.I.; Vlahos, L.; Kundu, M.R.

    1984-01-01

    The non-linear coalescence instability of current carrying solar loops can explain many of the characteristics of the solar flares such as their impulsive nature, heating and high energy particle acceleration, amplitude oscillations of electromagnetic emission as well as the characteristics of 2-D microwave images obtained during a flare. The plasma compressibility leads to the explosive phase of loop coalescence and its overshoot results in amplitude oscillations in temperatures by adiabatic compression and decompression. We note that the presence of strong electric fields and super-Alfvenic flows during the course of the instabilty paly an important role in the production of non-thermal particles. A qualitative explanation on the physical processes taking place during the non-linear stages of the instability is given. (author)

  15. Coalescence in dense water/oil dispersions

    Energy Technology Data Exchange (ETDEWEB)

    Thunem, H

    1993-06-01

    This project has been divided into three parts. The first part has been to review a large amount of literature to obtain models describing separate stages of the coalescence of a single drop at an interface. These stages include the drop deformation, the film thinning, the critical film thickness, and the drop breakup. The second part has been to evaluate the different models and select which to use in the development of the OneDrop program. The models describing drop deformation and film thinning were supplied by Charles and Mason, however the film thinning model has been slightly enhanced in this project. The models and the enhancements made have been compared to experimental data from the literature and from work done by undergraduate students at our department. The third part of the project has been to implement the models to drop-drop coalescence, and to write the SIM program to simulate the coalescence in a system of many drops. We use the same equations as in the OneDrop case, except for the film thinning. But by using a similar derivation as for the OneDrop case, an equation for the SIM case has been developed. We have made the assumption that the physical phenomena regarding drop deformation, film thinning and critical film thickness are the same in the OneDrop and SIM cases, so the experimental validation of OneDrop also apply to SIM. By using the results from the SIM program, we can obtain some information about how different physical parameters will affect the collision frequency and collision efficiency. We may use this information to derive empirical equations describing these parameters effect on the coalescence probability in a dispersion. 207 refs., 83 figs., 21 tabs.

  16. Genetic Variability Under the Seedbank Coalescent.

    Science.gov (United States)

    Blath, Jochen; González Casanova, Adrián; Eldon, Bjarki; Kurt, Noemi; Wilke-Berenguer, Maite

    2015-07-01

    We analyze patterns of genetic variability of populations in the presence of a large seedbank with the help of a new coalescent structure called the seedbank coalescent. This ancestral process appears naturally as a scaling limit of the genealogy of large populations that sustain seedbanks, if the seedbank size and individual dormancy times are of the same order as those of the active population. Mutations appear as Poisson processes on the active lineages and potentially at reduced rate also on the dormant lineages. The presence of "dormant" lineages leads to qualitatively altered times to the most recent common ancestor and nonclassical patterns of genetic diversity. To illustrate this we provide a Wright-Fisher model with a seedbank component and mutation, motivated from recent models of microbial dormancy, whose genealogy can be described by the seedbank coalescent. Based on our coalescent model, we derive recursions for the expectation and variance of the time to most recent common ancestor, number of segregating sites, pairwise differences, and singletons. Estimates (obtained by simulations) of the distributions of commonly employed distance statistics, in the presence and absence of a seedbank, are compared. The effect of a seedbank on the expected site-frequency spectrum is also investigated using simulations. Our results indicate that the presence of a large seedbank considerably alters the distribution of some distance statistics, as well as the site-frequency spectrum. Thus, one should be able to detect from genetic data the presence of a large seedbank in natural populations. Copyright © 2015 by the Genetics Society of America.

  17. The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Tung-Hsien; Hong, Franklin Chau-Nan

    2013-01-01

    Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes

  18. Cosmology with coalescing massive black holes

    International Nuclear Information System (INIS)

    Hughes, Scott A; Holz, Daniel E

    2003-01-01

    The gravitational waves generated in the coalescence of massive binary black holes will be measurable by LISA to enormous distances. Redshifts z ∼ 10 or larger (depending somewhat on the mass of the binary) can potentially be probed by such measurements, suggesting that binary coalescences can be made into cosmological tools. We discuss two particularly interesting types of probe. First, by combining gravitational-wave measurements with information about the cosmography of the universe, we can study the evolution of black-hole masses and merger rates as a function of redshift, providing information about the growth of structures at high redshift and possibly constraining hierarchical merger scenarios. Second, if it is possible to associate an 'electromagnetic' counterpart with a coalescence, it may be possible to measure both redshift and luminosity distance to an event with less than ∼1% error. Such a measurement would constitute an amazingly precise cosmological standard candle. Unfortunately, gravitational lensing uncertainties will reduce the quality of this candle significantly. Though not as amazing as might have been hoped, such a candle would nonetheless very usefully complement other distance-redshift probes, in particular providing a valuable check on systematic effects in such measurements

  19. Coalescent methods for estimating phylogenetic trees.

    Science.gov (United States)

    Liu, Liang; Yu, Lili; Kubatko, Laura; Pearl, Dennis K; Edwards, Scott V

    2009-10-01

    We review recent models to estimate phylogenetic trees under the multispecies coalescent. Although the distinction between gene trees and species trees has come to the fore of phylogenetics, only recently have methods been developed that explicitly estimate species trees. Of the several factors that can cause gene tree heterogeneity and discordance with the species tree, deep coalescence due to random genetic drift in branches of the species tree has been modeled most thoroughly. Bayesian approaches to estimating species trees utilizes two likelihood functions, one of which has been widely used in traditional phylogenetics and involves the model of nucleotide substitution, and the second of which is less familiar to phylogeneticists and involves the probability distribution of gene trees given a species tree. Other recent parametric and nonparametric methods for estimating species trees involve parsimony criteria, summary statistics, supertree and consensus methods. Species tree approaches are an appropriate goal for systematics, appear to work well in some cases where concatenation can be misleading, and suggest that sampling many independent loci will be paramount. Such methods can also be challenging to implement because of the complexity of the models and computational time. In addition, further elaboration of the simplest of coalescent models will be required to incorporate commonly known issues such as deviation from the molecular clock, gene flow and other genetic forces.

  20. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    Energy Technology Data Exchange (ETDEWEB)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  1. Crack Coalescence in Molded Gypsum and Carrara Marble

    Science.gov (United States)

    Wong, N.; Einstein, H. H.

    2007-12-01

    This research investigates the fracturing and coalescence behavior in prismatic laboratory-molded gypsum and Carrara marble specimens, which consist of either one or two pre-existing open flaws, under uniaxial compression. The tests are monitored by a high speed video system with a frame rate up to 24,000 frames/second. It allows one to precisely observe the cracking mechanisms, in particular if shear or tensile fracturing takes place. Seven crack types and nine crack coalescence categories are identified. The flaw inclination angle, the ligament length and the bridging angle between two flaws have different extents of influence on the coalescence patterns. For coplanar flaws, as the flaw inclination angle increases, there is a general trend of variation from shear coalescence to tensile coalescence. For stepped flaws, as the bridging angle changes from negative to small positive, and further up to large positive values, the coalescence generally progresses from categories of no coalescence, indirect coalescence to direct coalescence. For direct coalescence, it generally progresses from shear, mixed shear-tensile to tensile as the bridging angle increases. Some differences in fracturing and coalescence processes are observed in gypsum and marble, particularly the crack initiation in marble is preceded by the development of macroscopic white patches, but not in gypsum. Scanning Electron Microprobe (SEM) study reveals that the white patches consist of zones of microcracks (process zones).

  2. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  3. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  4. Stochastic coalescence in Lagrangian cloud microphysics

    Directory of Open Access Journals (Sweden)

    P. Dziekan

    2017-11-01

    Full Text Available Stochasticity of the collisional growth of cloud droplets is studied using the super-droplet method (SDM of Shima et al.(2009. Statistics are calculated from ensembles of simulations of collision–coalescence in a single well-mixed cell. The SDM is compared with direct numerical simulations and the master equation. It is argued that SDM simulations in which one computational droplet represents one real droplet are at the same level of precision as the master equation. Such simulations are used to study fluctuations in the autoconversion time, the sol–gel transition and the growth rate of lucky droplets, which is compared with a theoretical prediction. The size of the coalescence cell is found to strongly affect system behavior. In small cells, correlations in droplet sizes and droplet depletion slow down rain formation. In large cells, collisions between raindrops are more frequent and this can also slow down rain formation. The increase in the rate of collision between raindrops may be an artifact caused by assuming an overly large well-mixed volume. The highest ratio of rain water to cloud water is found in cells of intermediate sizes. Next, we use these precise simulations to determine the validity of more approximate methods: the Smoluchowski equation and the SDM with multiplicities greater than 1. In the latter, we determine how many computational droplets are necessary to correctly model the expected number and the standard deviation of the autoconversion time. The maximal size of a volume that is turbulently well mixed with respect to coalescence is estimated at Vmix  =  1.5  ×  10−2 cm3. The Smoluchowski equation is not valid in such small volumes. It is argued that larger volumes can be considered approximately well mixed, but such approximation needs to be supported by a comparison with fine-grid simulations that resolve droplet motion.

  5. Modelling binary black-hole coalescence

    International Nuclear Information System (INIS)

    Baker, John

    2003-01-01

    The final burst of radiation from the coalescence of two supermassive black holes produces extraordinary gravitational wave luminosity making these events visible to LISA even out to large redshift. Interpreting such observations will require detailed theoretical models, based on general relativity. The effort to construct these models is just beginning to produce results. I describe the Lazarus approach to modelling these radiation bursts, and present recent results which indicate that the system loses, in the last few wave cycles, about 3% of its mass-energy as strongly polarized gravitational radiation

  6. GALAXY ROTATION AND RAPID SUPERMASSIVE BINARY COALESCENCE

    Energy Technology Data Exchange (ETDEWEB)

    Holley-Bockelmann, Kelly [Vanderbilt University, Nashville, TN (United States); Khan, Fazeel Mahmood, E-mail: k.holley@vanderbilt.edu [Institute of Space Technology (IST), Islamabad (Pakistan)

    2015-09-10

    Galaxy mergers usher the supermassive black hole (SMBH) in each galaxy to the center of the potential, where they form an SMBH binary. The binary orbit shrinks by ejecting stars via three-body scattering, but ample work has shown that in spherical galaxy models, the binary separation stalls after ejecting all the stars in its loss cone—this is the well-known final parsec problem. However, it has been shown that SMBH binaries in non-spherical galactic nuclei harden at a nearly constant rate until reaching the gravitational wave regime. Here we use a suite of direct N-body simulations to follow SMBH binary evolution in both corotating and counterrotating flattened galaxy models. For N > 500 K, we find that the evolution of the SMBH binary is convergent and is independent of the particle number. Rotation in general increases the hardening rate of SMBH binaries even more effectively than galaxy geometry alone. SMBH binary hardening rates are similar for co- and counterrotating galaxies. In the corotating case, the center of mass of the SMBH binary settles into an orbit that is in corotation resonance with the background rotating model, and the coalescence time is roughly a few 100 Myr faster than a non-rotating flattened model. We find that counterrotation drives SMBHs to coalesce on a nearly radial orbit promptly after forming a hard binary. We discuss the implications for gravitational wave astronomy, hypervelocity star production, and the effect on the structure of the host galaxy.

  7. GALAXY ROTATION AND RAPID SUPERMASSIVE BINARY COALESCENCE

    International Nuclear Information System (INIS)

    Holley-Bockelmann, Kelly; Khan, Fazeel Mahmood

    2015-01-01

    Galaxy mergers usher the supermassive black hole (SMBH) in each galaxy to the center of the potential, where they form an SMBH binary. The binary orbit shrinks by ejecting stars via three-body scattering, but ample work has shown that in spherical galaxy models, the binary separation stalls after ejecting all the stars in its loss cone—this is the well-known final parsec problem. However, it has been shown that SMBH binaries in non-spherical galactic nuclei harden at a nearly constant rate until reaching the gravitational wave regime. Here we use a suite of direct N-body simulations to follow SMBH binary evolution in both corotating and counterrotating flattened galaxy models. For N > 500 K, we find that the evolution of the SMBH binary is convergent and is independent of the particle number. Rotation in general increases the hardening rate of SMBH binaries even more effectively than galaxy geometry alone. SMBH binary hardening rates are similar for co- and counterrotating galaxies. In the corotating case, the center of mass of the SMBH binary settles into an orbit that is in corotation resonance with the background rotating model, and the coalescence time is roughly a few 100 Myr faster than a non-rotating flattened model. We find that counterrotation drives SMBHs to coalesce on a nearly radial orbit promptly after forming a hard binary. We discuss the implications for gravitational wave astronomy, hypervelocity star production, and the effect on the structure of the host galaxy

  8. A coalescence model for uranium exploration

    International Nuclear Information System (INIS)

    Stuart-Williams, V.; Taylor, C.M.

    1983-01-01

    Uranium mineralization was found in the Pristerognathus-Diictodon Assemblage Zone of the Teekloof Formation, Beaufort Group, west of Beaufort West, Cape Province, South Africa. All the anomalies can be related to a single mineralization model. Mineralization is found at the termination of a silt parting between two coalescing sandstones and lies in the lower sandstone as an inclined zone dipping downflow from the termination of the silt parting. The existence of primary Eh-pH gradient is indicated by a uranium-molybdenum zonation, the molybdenum lying above the uranium mineralization. The upper sandstone was an oxidizing fluvial channel in an arid environment through which uranyl carbonate was being transported in solution. Carbonaceous material undergoing anaerobic bacterial breakdown generated a weakly reducing fluid in the lower sandstone. Carbonaceous material at the REDOX front developed between the two mixing fluids at the point of sandstone coalescence reduced uranyl carbonates in solution. Once reduced the uranium minerals remained stable because the conditions in the REDOX front were only very weakly oxidizing. As floodplain aggradation continued, the upper sandstone was buried and the entire sandstone couplet became reducing, permanently stabilizing the uranium mineralization

  9. Coalescent: an open-science framework for importance sampling in coalescent theory.

    Science.gov (United States)

    Tewari, Susanta; Spouge, John L

    2015-01-01

    Background. In coalescent theory, computer programs often use importance sampling to calculate likelihoods and other statistical quantities. An importance sampling scheme can exploit human intuition to improve statistical efficiency of computations, but unfortunately, in the absence of general computer frameworks on importance sampling, researchers often struggle to translate new sampling schemes computationally or benchmark against different schemes, in a manner that is reliable and maintainable. Moreover, most studies use computer programs lacking a convenient user interface or the flexibility to meet the current demands of open science. In particular, current computer frameworks can only evaluate the efficiency of a single importance sampling scheme or compare the efficiencies of different schemes in an ad hoc manner. Results. We have designed a general framework (http://coalescent.sourceforge.net; language: Java; License: GPLv3) for importance sampling that computes likelihoods under the standard neutral coalescent model of a single, well-mixed population of constant size over time following infinite sites model of mutation. The framework models the necessary core concepts, comes integrated with several data sets of varying size, implements the standard competing proposals, and integrates tightly with our previous framework for calculating exact probabilities. For a given dataset, it computes the likelihood and provides the maximum likelihood estimate of the mutation parameter. Well-known benchmarks in the coalescent literature validate the accuracy of the framework. The framework provides an intuitive user interface with minimal clutter. For performance, the framework switches automatically to modern multicore hardware, if available. It runs on three major platforms (Windows, Mac and Linux). Extensive tests and coverage make the framework reliable and maintainable. Conclusions. In coalescent theory, many studies of computational efficiency consider only

  10. Coalescent: an open-science framework for importance sampling in coalescent theory

    Directory of Open Access Journals (Sweden)

    Susanta Tewari

    2015-08-01

    Full Text Available Background. In coalescent theory, computer programs often use importance sampling to calculate likelihoods and other statistical quantities. An importance sampling scheme can exploit human intuition to improve statistical efficiency of computations, but unfortunately, in the absence of general computer frameworks on importance sampling, researchers often struggle to translate new sampling schemes computationally or benchmark against different schemes, in a manner that is reliable and maintainable. Moreover, most studies use computer programs lacking a convenient user interface or the flexibility to meet the current demands of open science. In particular, current computer frameworks can only evaluate the efficiency of a single importance sampling scheme or compare the efficiencies of different schemes in an ad hoc manner.Results. We have designed a general framework (http://coalescent.sourceforge.net; language: Java; License: GPLv3 for importance sampling that computes likelihoods under the standard neutral coalescent model of a single, well-mixed population of constant size over time following infinite sites model of mutation. The framework models the necessary core concepts, comes integrated with several data sets of varying size, implements the standard competing proposals, and integrates tightly with our previous framework for calculating exact probabilities. For a given dataset, it computes the likelihood and provides the maximum likelihood estimate of the mutation parameter. Well-known benchmarks in the coalescent literature validate the accuracy of the framework. The framework provides an intuitive user interface with minimal clutter. For performance, the framework switches automatically to modern multicore hardware, if available. It runs on three major platforms (Windows, Mac and Linux. Extensive tests and coverage make the framework reliable and maintainable.Conclusions. In coalescent theory, many studies of computational efficiency

  11. Coalescence preference and droplet size inequality during fluid phase segregation

    Science.gov (United States)

    Roy, Sutapa

    2018-02-01

    Using molecular dynamics simulations and scaling arguments, we investigate the coalescence preference dynamics of liquid droplets in a phase-segregating off-critical, single-component fluid. It is observed that the preferential distance of the product drop from its larger parent, during a coalescence event, gets smaller for large parent size inequality. The relative coalescence position exhibits a power-law dependence on the parent size ratio with an exponent q ≃ 3.1 . This value of q is in strong contrast with earlier reports 2.1 and 5.1 in the literature. The dissimilarity is explained by considering the underlying coalescence mechanisms.

  12. Mechanism and simulation of droplet coalescence in molten steel

    Science.gov (United States)

    Ni, Bing; Zhang, Tao; Ni, Hai-qi; Luo, Zhi-guo

    2017-11-01

    Droplet coalescence in liquid steel was carefully investigated through observations of the distribution pattern of inclusions in solidified steel samples. The process of droplet coalescence was slow, and the critical Weber number ( We) was used to evaluate the coalescence or separation of droplets. The relationship between the collision parameter and the critical We indicated whether slow coalescence or bouncing of droplets occurred. The critical We was 5.5, which means that the droplets gradually coalesce when We ≤ 5.5, whereas they bounce when We > 5.5. For the carbonate wire feeding into liquid steel, a mathematical model implementing a combined computational fluid dynamics (CFD)-discrete element method (DEM) approach was developed to simulate the movement and coalescence of variably sized droplets in a bottom-argon-blowing ladle. In the CFD model, the flow field was solved on the premise that the fluid was a continuous medium. Meanwhile, the droplets were dispersed in the DEM model, and the coalescence criterion of the particles was added to simulate the collision- coalescence process of the particles. The numerical simulation results and observations of inclusion coalescence in steel samples are consistent.

  13. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

    Directory of Open Access Journals (Sweden)

    Yu-An Chen

    2014-01-01

    Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

  14. Coalescent genealogy samplers: windows into population history.

    Science.gov (United States)

    Kuhner, Mary K

    2009-02-01

    Coalescent genealogy samplers attempt to estimate past qualities of a population, such as its size, growth rate, patterns of gene flow or time of divergence from another population, based on samples of molecular data. Genealogy samplers are increasingly popular because of their potential to disentangle complex population histories. In the last decade they have been widely applied to systems ranging from humans to viruses. Findings include detection of unexpected reproductive inequality in fish, new estimates of historical whale abundance, exoneration of humans for the prehistoric decline of bison and inference of a selective sweep on the human Y chromosome. This review summarizes available genealogy-sampler software, including data requirements and limitations on the use of each program.

  15. Direct numerical simulation of water droplet coalescence in the oil

    International Nuclear Information System (INIS)

    Mohammadi, Mehdi; Shahhosseini, Shahrokh; Bayat, Mahmoud

    2012-01-01

    Highlights: ► VOF computational technique has been used to simulate coalescence of two water droplets in oil. ► The model was validated with the experimental data for binary droplet coalescence. ► Based on the CFD simulation results a correlation has been proposed to predict the coalescence time. - Abstract: Coalescence of two water droplets in the oil was simulated using Computational Fluid Dynamics (CFD) techniques. The finite volume numerical method was applied to solve the Navier–Stokes equations in conjunction with the Volume of Fluid (VOF) approach for interface tracking. The effects of some parameters consisting of the collision velocity, off-center collision parameter, oil viscosity and water–oil interfacial tension on the coalescence time were investigated. The simulation results were validated against the experimental data available in the literature. The results revealed that quicker coalescence could be achieved if the head-on collisions occur or the droplets approach each other with a high velocity. In addition, low oil viscosities or large water–oil interfacial tensions cause less coalescence time. Moreover, a correlation was developed to predict coalescence efficiency as a function of the mentioned parameters.

  16. Satellite Formation during Coalescence of Unequal Size Drops

    KAUST Repository

    Zhang, F. H.

    2009-03-12

    The coalescence of a drop with a flat liquid surface pinches off a satellite from its top, in the well-known coalescence cascade, whereas the coalescence of two equally sized drops does not appear to leave such a satellite. Herein we perform experiments to identify the critical diameter ratio of two drops, above which a satellite is produced during their coalescence. We find that the critical parent ratio is as small as 1.55, but grows monotonically with the Ohnesorge number. The daughter size is typically about 50% of the mother drop. However, we have identified novel pinch-off dynamics close to the critical size ratio, where the satellite does not fully separate, but rather goes directly into a second stage of the coalescence cascade, thus generating a much smaller satellite droplet.

  17. Surfactant effect on drop coalescence and film drainage hydrodynamics

    Science.gov (United States)

    Weheliye, Weheliye; Chinaud, Maxime; Voulgaropoulos, Victor; Angeli, Panagiota

    2015-11-01

    Coalescence of a drop on an aqueous-organic interface is studied in two test geometries A rectangular acrylic vessel and a Hele-Shaw cell (two parallel plates placed 2mm apart) are investigated for the experiments. Time resolved Particle Image Velocimetry (PIV) measurements provide information on the hydrodynamics during the bouncing stage of the droplet and on the vortices generated at the bulk fluid after the droplet has coalesced. The velocity field inside the droplet during its coalescence is presented. By localizing the rupture point of the coalescence in the quasi two dimensional cell, the film drainage dynamics are discussed by acquiring its flow velocity by PIV measurements with a straddling camera. The effect of surface tension forces in the coalescence of the droplet is investigated by introducing surface active agents at various concentrations extending on both sides of the critical micelle concentration.

  18. Satellite Formation during Coalescence of Unequal Size Drops

    KAUST Repository

    Zhang, F. H.; Li, E. Q.; Thoroddsen, Sigurdur T

    2009-01-01

    The coalescence of a drop with a flat liquid surface pinches off a satellite from its top, in the well-known coalescence cascade, whereas the coalescence of two equally sized drops does not appear to leave such a satellite. Herein we perform experiments to identify the critical diameter ratio of two drops, above which a satellite is produced during their coalescence. We find that the critical parent ratio is as small as 1.55, but grows monotonically with the Ohnesorge number. The daughter size is typically about 50% of the mother drop. However, we have identified novel pinch-off dynamics close to the critical size ratio, where the satellite does not fully separate, but rather goes directly into a second stage of the coalescence cascade, thus generating a much smaller satellite droplet.

  19. Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

    Science.gov (United States)

    Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.

    2018-04-01

    The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

  20. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

    International Nuclear Information System (INIS)

    Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

    2007-01-01

    A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

  1. Study of GaN nanorods converted from β-Ga2O3

    Science.gov (United States)

    Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

    2018-05-01

    We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

  2. SODIUM ALUMINOSILICATE FOULING AND CLEANING OF DECONTAMINATED SALT SOLUTION COALESCERS

    International Nuclear Information System (INIS)

    Poirier, M.; Thomas Peters, T.; Fernando Fondeur, F.; Samuel Fink, S.

    2008-01-01

    During initial non-radioactive operations at the Modular Caustic Side Solvent Extraction Unit (MCU), the pressure drop across the decontaminated salt solution coalescer reached ∼10 psi while processing ∼1250 gallons of salt solution, indicating possible fouling or plugging of the coalescer. An analysis of the feed solution and the 'plugged coalescer' concluded that the plugging was due to sodium aluminosilicate solids. MCU personnel requested Savannah River National Laboratory (SRNL) to investigate the formation of the sodium aluminosilicate solids (NAS) and the impact of the solids on the decontaminated salt solution coalescer. Researchers performed developmental testing of the cleaning protocols with a bench-scale coalescer container 1-inch long segments of a new coalescer element fouled using simulant solution. In addition, the authors obtained a 'plugged' Decontaminated Salt Solution coalescer from non-radioactive testing in the MCU and cleaned it according to the proposed cleaning procedure. Conclusions from this testing include the following: (1) Testing with the bench-scale coalescer showed an increase in pressure drop from solid particles, but the increase was not as large as observed at MCU. (2) Cleaning the bench-scale coalescer with nitric acid reduced the pressure drop and removed a large amount of solid particles (11 g of bayerite if all aluminum is present in that form or 23 g of sodium aluminosilicate if all silicon is present in that form). (3) Based on analysis of the cleaning solutions from bench-scale test, the 'dirt capacity' of a 40 inch coalescer for the NAS solids tested is calculated as 450-950 grams. (4) Cleaning the full-scale coalescer with nitric acid reduced the pressure drop and removed a large amount of solid particles (60 g of aluminum and 5 g of silicon). (5) Piping holdup in the full-scale coalescer system caused the pH to differ from the target value. Comparable hold-up in the facility could lead to less effective cleaning and

  3. ELECTRON ACCELERATION BY MULTI-ISLAND COALESCENCE

    International Nuclear Information System (INIS)

    Oka, M.; Phan, T.-D.; Krucker, S.; Fujimoto, M.; Shinohara, I.

    2010-01-01

    Energetic electrons of up to tens of MeV are created during explosive phenomena in the solar corona. While many theoretical models consider magnetic reconnection as a possible way of generating energetic electrons, the precise roles of magnetic reconnection during acceleration and heating of electrons still remain unclear. Here, we show from two-dimensional particle-in-cell simulations that coalescence of magnetic islands that naturally form as a consequence of tearing mode instability and associated magnetic reconnection leads to efficient energization of electrons. The key process is the secondary magnetic reconnection at the merging points, or the 'anti-reconnection', which is, in a sense, driven by the converging outflows from the initial magnetic reconnection regions. By following the trajectories of the most energetic electrons, we found a variety of different acceleration mechanisms but the energization at the anti-reconnection is found to be the most important process. We discuss possible applications to the energetic electrons observed in the solar flares. We anticipate our results to be a starting point for more sophisticated models of particle acceleration during the explosive energy release phenomena.

  4. Coalescent: an open-source and scalable framework for exact calculations in coalescent theory

    Science.gov (United States)

    2012-01-01

    Background Currently, there is no open-source, cross-platform and scalable framework for coalescent analysis in population genetics. There is no scalable GUI based user application either. Such a framework and application would not only drive the creation of more complex and realistic models but also make them truly accessible. Results As a first attempt, we built a framework and user application for the domain of exact calculations in coalescent analysis. The framework provides an API with the concepts of model, data, statistic, phylogeny, gene tree and recursion. Infinite-alleles and infinite-sites models are considered. It defines pluggable computations such as counting and listing all the ancestral configurations and genealogies and computing the exact probability of data. It can visualize a gene tree, trace and visualize the internals of the recursion algorithm for further improvement and attach dynamically a number of output processors. The user application defines jobs in a plug-in like manner so that they can be activated, deactivated, installed or uninstalled on demand. Multiple jobs can be run and their inputs edited. Job inputs are persisted across restarts and running jobs can be cancelled where applicable. Conclusions Coalescent theory plays an increasingly important role in analysing molecular population genetic data. Models involved are mathematically difficult and computationally challenging. An open-source, scalable framework that lets users immediately take advantage of the progress made by others will enable exploration of yet more difficult and realistic models. As models become more complex and mathematically less tractable, the need for an integrated computational approach is obvious. Object oriented designs, though has upfront costs, are practical now and can provide such an integrated approach. PMID:23033878

  5. Coalescent: an open-source and scalable framework for exact calculations in coalescent theory

    Directory of Open Access Journals (Sweden)

    Tewari Susanta

    2012-10-01

    Full Text Available Abstract Background Currently, there is no open-source, cross-platform and scalable framework for coalescent analysis in population genetics. There is no scalable GUI based user application either. Such a framework and application would not only drive the creation of more complex and realistic models but also make them truly accessible. Results As a first attempt, we built a framework and user application for the domain of exact calculations in coalescent analysis. The framework provides an API with the concepts of model, data, statistic, phylogeny, gene tree and recursion. Infinite-alleles and infinite-sites models are considered. It defines pluggable computations such as counting and listing all the ancestral configurations and genealogies and computing the exact probability of data. It can visualize a gene tree, trace and visualize the internals of the recursion algorithm for further improvement and attach dynamically a number of output processors. The user application defines jobs in a plug-in like manner so that they can be activated, deactivated, installed or uninstalled on demand. Multiple jobs can be run and their inputs edited. Job inputs are persisted across restarts and running jobs can be cancelled where applicable. Conclusions Coalescent theory plays an increasingly important role in analysing molecular population genetic data. Models involved are mathematically difficult and computationally challenging. An open-source, scalable framework that lets users immediately take advantage of the progress made by others will enable exploration of yet more difficult and realistic models. As models become more complex and mathematically less tractable, the need for an integrated computational approach is obvious. Object oriented designs, though has upfront costs, are practical now and can provide such an integrated approach.

  6. The coalescence of heterogeneous liquid metal on nano substrate

    Science.gov (United States)

    Wang, Long; Li, Yifan; Zhou, Xuyan; Li, Tao; Li, Hui

    2017-06-01

    Molecular dynamics simulation has been performed to study the asymmetric coalescence of heterogeneous liquid metal on graphene. Simulation results show that the anomalies in the drop coalescence is mainly caused by the wettability of heterogeneous liquid metal. The silver atoms incline to distribute on the outer layer of the gold and copper droplets, revealing that the structure is determined by the interaction between different metal atoms. The coalescence and fusion of heterogeneous liquid metal drop can be predicted by comparing the wettability and the atomic mass of metallic liquid drops, which has important implications in the industrial application such as ink-jet printing and metallurgy.

  7. Analysis of Void Growth and Coalescence in Porous Polymer Materials. Coalescence in Polymer Materials

    Directory of Open Access Journals (Sweden)

    S. A. Reffas

    2013-06-01

    Full Text Available The use of polymeric materials in engineering applications is growing more and more all over the world. This issue requests new methodologies of analysis in order to assess the material’s capability to withstand complex loads. The use of polyacetal in engineering applications has increased rapidly in the last decade. In order to evaluate the behavior, the damage and coalescence of this type of polymer, a numerical method based on damage which occurs following several stages (nucleation of cavities, their growth and coalescence in more advanced stages of deformation is proposed in this work. A particular attention is given on the stress-strain and the volumetric strain evolution under different triaxiality and for three initial void shapes. Its application to polyacetal allows approving this approach for technical polymers. Finally, this method allow us to compare the obtained results of basic calculations at different triaxiality and to discuss their possible influence on the initial size and the geometrical shape of the porosity on the material failure.

  8. Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

    2011-01-01

    Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

  9. Coalescence of liquid drops: Different models versus experiment

    KAUST Repository

    Sprittles, J. E.; Shikhmurzaev, Y. D.

    2012-01-01

    help to further elucidate the details of the coalescence phenomenon. As a by-product of our research, the range of validity of different "scaling laws" advanced as approximate solutions to the problem formulated using the conventional model

  10. Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

    Science.gov (United States)

    Li, Shunfeng; Wang, Xue; Mohajerani, Matin Sadat; Fündling, Sönke; Erenburg, Milena; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas; Mandl, Martin; Bergbauer, Werner; Strassburg, Martin

    2013-02-01

    Selective area growth of GaN rods by metalorganic vapor phase epitaxy has attracted great interest due to its novel applications in optoelectronic and photonics. In this work, we will present the dependence of GaN rod morphology on various growth parameters i.e. growth temperature, H2/N2 carrier gas concentration, V/III ratio, total carrier gas flow and reactor pressure. It is found that higher growth temperature helps to increase the aspect ratio of the rods, but reduces the height homogeneity. Furthermore, H2/N2 carrier gas concentration is found to be a critical factor to obtain vertical rod growth. Pure nitrogen carrier gas leads to irregular growth of GaN structure, while an increase of hydrogen carrier gas results in vertical GaN rod growth. Higher hydrogen carrier gas concentration also reduces the diameter and enhances the aspect of the GaN rods. Besides, increase of V/III ratio causes reduction of the aspect ratio of N-polar GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface when supplying more ammonia. In addition, an increase of the total carrier gas flow leads to a decrease in the diameter and the average volume of GaN rods. These phenomena are tentatively explained by the change of partial pressure of the source materials and boundary layer thickness in the reactor. Finally, it is shown that the average volume of the N-polar GaN rods keeps a similar value for a reactor pressure PR of 66 and 125 mbar, while an incomplete filling of the pattern opening is observed with PR of 250 mbar. Room temperature photoluminescence spectrum of the rods is also briefly discussed.

  11. On spatial coalescents with multiple mergers in two dimensions.

    Science.gov (United States)

    Heuer, Benjamin; Sturm, Anja

    2013-08-01

    We consider the genealogy of a sample of individuals taken from a spatially structured population when the variance of the offspring distribution is relatively large. The space is structured into discrete sites of a graph G. If the population size at each site is large, spatial coalescents with multiple mergers, so called spatial Λ-coalescents, for which ancestral lines migrate in space and coalesce according to some Λ-coalescent mechanism, are shown to be appropriate approximations to the genealogy of a sample of individuals. We then consider as the graph G the two dimensional torus with side length 2L+1 and show that as L tends to infinity, and time is rescaled appropriately, the partition structure of spatial Λ-coalescents of individuals sampled far enough apart converges to the partition structure of a non-spatial Kingman coalescent. From a biological point of view this means that in certain circumstances both the spatial structure as well as larger variances of the underlying offspring distribution are harder to detect from the sample. However, supplemental simulations show that for moderately large L the different structure is still evident. Copyright © 2012 Elsevier Inc. All rights reserved.

  12. Photoconductive GaN UV Detectors

    National Research Council Canada - National Science Library

    Baranowski, Jacek

    1999-01-01

    This report results from a contract tasking University of Warsaw as follows: The contractor will investigate the growth of GaN material using atmospheric pressure metalorganic chemical vapor deposition method (MOCVD...

  13. Delimiting Coalescence Genes (C-Genes) in Phylogenomic Data Sets.

    Science.gov (United States)

    Springer, Mark S; Gatesy, John

    2018-02-26

    coalescence methods have emerged as a popular alternative for inferring species trees with large genomic datasets, because these methods explicitly account for incomplete lineage sorting. However, statistical consistency of summary coalescence methods is not guaranteed unless several model assumptions are true, including the critical assumption that recombination occurs freely among but not within coalescence genes (c-genes), which are the fundamental units of analysis for these methods. Each c-gene has a single branching history, and large sets of these independent gene histories should be the input for genome-scale coalescence estimates of phylogeny. By contrast, numerous studies have reported the results of coalescence analyses in which complete protein-coding sequences are treated as c-genes even though exons for these loci can span more than a megabase of DNA. Empirical estimates of recombination breakpoints suggest that c-genes may be much shorter, especially when large clades with many species are the focus of analysis. Although this idea has been challenged recently in the literature, the inverse relationship between c-gene size and increased taxon sampling in a dataset-the 'recombination ratchet'-is a fundamental property of c-genes. For taxonomic groups characterized by genes with long intron sequences, complete protein-coding sequences are likely not valid c-genes and are inappropriate units of analysis for summary coalescence methods unless they occur in recombination deserts that are devoid of incomplete lineage sorting (ILS). Finally, it has been argued that coalescence methods are robust when the no-recombination within loci assumption is violated, but recombination must matter at some scale because ILS, a by-product of recombination, is the raison d'etre for coalescence methods. That is, extensive recombination is required to yield the large number of independently segregating c-genes used to infer a species tree. If coalescent methods are powerful

  14. Explosive coalescence of magnetic islands and explosive particle acceleration

    International Nuclear Information System (INIS)

    Tajima, T.; Sakai, J.I.

    1985-07-01

    An explosive reconnection process associated with the nonlinear evolution of the coalescence instability is found through studies of the electromagnetic particle simulation and the magnetohydrodynamic particle simulation. The explosive coalescence is a process of magnetic collapse, in which we find the magnetic and electrostatic field energies and temperatures (ion temperature in the coalescing direction, in particular) explode toward the explosion time t 0 as (t 0 - t)/sup -8/3/, (t 0 - t) -4 , and (t 0 - t)/sup -8/3/, respectively for a canonical case. Single-peak, double-peak, and triple-peak structures of magnetic energy, temperature, and electrostatic energy, respectively, are observed on the simulation as overshoot amplitude oscillations and are theoretically explained. The heuristic model of Brunel and Tajima is extended to this explosive coalescence in order to extract the basic process. Since the explosive coalescence exhibits self-similarity, a temporal universality, we theoretically search for a self-similar solution to the two-fluid plasma equations

  15. A fluid-mechanical model of elastocapillary coalescence

    KAUST Repository

    Singh, Kiran

    2014-03-25

    © 2014 Cambridge University Press. We present a fluid-mechanical model of the coalescence of a number of elastic objects due to surface tension. We consider an array of spring-block elements separated by thin liquid films, whose dynamics are modelled using lubrication theory. With this simplified model of elastocapillary coalescence, we present the results of numerical simulations for a large number of elements, N = O(104). A linear stability analysis shows that pairwise coalescence is always the most unstable mode of deformation. However, the numerical simulations show that the cluster sizes actually produced by coalescence from a small white-noise perturbation have a distribution that depends on the relative strength of surface tension and elasticity, as measured by an elastocapillary number K. Both the maximum cluster size and the mean cluster size scale like K-1/2 for small K. An analytical solution for the response of the system to a localized perturbation shows that such perturbations generate propagating disturbance fronts, which leave behind \\'frozen-in\\' clusters of a predictable size that also depends on K. A good quantitative comparison between the cluster-size statistics from noisy perturbations and this \\'frozen-in\\' cluster size suggests that propagating fronts may play a crucial role in the dynamics of coalescence.

  16. Liquid Marble Coalescence and Triggered Microreaction Driven by Acoustic Levitation.

    Science.gov (United States)

    Chen, Zhen; Zang, Duyang; Zhao, Liang; Qu, Mengfei; Li, Xu; Li, Xiaoguang; Li, Lixin; Geng, Xingguo

    2017-06-27

    Liquid marbles show promising potential for application in the microreactor field. Control of the coalescence between two or among multiple liquid marbles is critical; however, the successful merging of two isolated marbles is difficult because of their mechanically robust particle shells. In this work, the coalescence of multiple liquid marbles was achieved via acoustic levitation. The dynamic behaviors of the liquid marbles were monitored by a high-speed camera. Driven by the sound field, the liquid marbles moved toward each other, collided, and eventually coalesced into a larger single marble. The underlying mechanisms of this process were probed via sound field simulation and acoustic radiation pressure calculation. The results indicated that the pressure gradient on the liquid marble surface favors the formation of a liquid bridge between the liquid marbles, resulting in their coalescence. A preliminary indicator reaction was induced by the coalescence of dual liquid marbles, which suggests that expected chemical reactions can be successfully triggered with multiple reagents contained in isolated liquid marbles via acoustic levitation.

  17. Coalescence of liquid drops: Different models versus experiment

    KAUST Repository

    Sprittles, J. E.

    2012-01-01

    The process of coalescence of two identical liquid drops is simulated numerically in the framework of two essentially different mathematical models, and the results are compared with experimental data on the very early stages of the coalescence process reported recently. The first model tested is the "conventional" one, where it is assumed that coalescence as the formation of a single body of fluid occurs by an instant appearance of a liquid bridge smoothly connecting the two drops, and the subsequent process is the evolution of this single body of fluid driven by capillary forces. The second model under investigation considers coalescence as a process where a section of the free surface becomes trapped between the bulk phases as the drops are pressed against each other, and it is the gradual disappearance of this "internal interface" that leads to the formation of a single body of fluid and the conventional model taking over. Using the full numerical solution of the problem in the framework of each of the two models, we show that the recently reported electrical measurements probing the very early stages of the process are better described by the interface formation/disappearance model. New theory-guided experiments are suggested that would help to further elucidate the details of the coalescence phenomenon. As a by-product of our research, the range of validity of different "scaling laws" advanced as approximate solutions to the problem formulated using the conventional model is established. © 2012 American Institute of Physics.

  18. GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template

    Science.gov (United States)

    Duan, Xiaoling; Zhang, Jincheng; Xiao, Ming; Zhang, Jinfeng; Hao, Yue

    2018-05-01

    We demonstrate a GaN growth method using microrod sidewall epitaxial lateral overgrowth (MSELO) on a close-packed microrod template by a nonlithographic technique. The density and distribution of threading dislocations were determined by the density and distribution of microrods and the nucleation model. MSELO exhibited two different nucleation models determined by the direction and degree of substrate misorientation and the sidewall curvature: one-sidewall and three-sidewall nucleation, predicting the dislocation density values. As a result, the threading dislocation density was markedly decreased from 2 × 109 to 5 × 107 cm‑2 with a small coalescence thickness of ∼2 µm for the close-packed 3000 nm microrod sample.

  19. Structure and electronic properties of mixed (a + c) dislocation cores in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Horton, M. K., E-mail: m.horton11@imperial.ac.uk [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Rhode, S. L. [Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moram, M. A. [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-08-14

    Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

  20. Structure and electronic properties of mixed (a + c) dislocation cores in GaN

    International Nuclear Information System (INIS)

    Horton, M. K.; Rhode, S. L.; Moram, M. A.

    2014-01-01

    Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12 ¯ 10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance

  1. The Formation and Characterization of GaN Hexagonal Pyramids

    Science.gov (United States)

    Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

    2013-05-01

    GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

  2. A Frontal Attack on Limiting Defects in GaN

    National Research Council Canada - National Science Library

    Morkoc, Hadis

    2002-01-01

    GaN community, particularly under the leadership of Drs. Wood, Win, and Litton, recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood...

  3. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  4. Synthetic Strategies and Applications of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  5. A parallel algorithm for filtering gravitational waves from coalescing binaries

    International Nuclear Information System (INIS)

    Sathyaprakash, B.S.; Dhurandhar, S.V.

    1992-10-01

    Coalescing binary stars are perhaps the most promising sources for the observation of gravitational waves with laser interferometric gravity wave detectors. The waveform from these sources can be predicted with sufficient accuracy for matched filtering techniques to be applied. In this paper we present a parallel algorithm for detecting signals from coalescing compact binaries by the method of matched filtering. We also report the details of its implementation on a 256-node connection machine consisting of a network of transputers. The results of our analysis indicate that parallel processing is a promising approach to on-line analysis of data from gravitational wave detectors to filter out coalescing binary signals. The algorithm described is quite general in that the kernel of the algorithm is applicable to any set of matched filters. (author). 15 refs, 4 figs

  6. Coalescent Processes with Skewed Offspring Distributions and Nonequilibrium Demography.

    Science.gov (United States)

    Matuszewski, Sebastian; Hildebrandt, Marcel E; Achaz, Guillaume; Jensen, Jeffrey D

    2018-01-01

    Nonequilibrium demography impacts coalescent genealogies leaving detectable, well-studied signatures of variation. However, similar genomic footprints are also expected under models of large reproductive skew, posing a serious problem when trying to make inference. Furthermore, current approaches consider only one of the two processes at a time, neglecting any genomic signal that could arise from their simultaneous effects, preventing the possibility of jointly inferring parameters relating to both offspring distribution and population history. Here, we develop an extended Moran model with exponential population growth, and demonstrate that the underlying ancestral process converges to a time-inhomogeneous psi-coalescent. However, by applying a nonlinear change of time scale-analogous to the Kingman coalescent-we find that the ancestral process can be rescaled to its time-homogeneous analog, allowing the process to be simulated quickly and efficiently. Furthermore, we derive analytical expressions for the expected site-frequency spectrum under the time-inhomogeneous psi-coalescent, and develop an approximate-likelihood framework for the joint estimation of the coalescent and growth parameters. By means of extensive simulation, we demonstrate that both can be estimated accurately from whole-genome data. In addition, not accounting for demography can lead to serious biases in the inferred coalescent model, with broad implications for genomic studies ranging from ecology to conservation biology. Finally, we use our method to analyze sequence data from Japanese sardine populations, and find evidence of high variation in individual reproductive success, but few signs of a recent demographic expansion. Copyright © 2018 by the Genetics Society of America.

  7. Coalescence of silver unidimensional structures by molecular dynamics simulation

    International Nuclear Information System (INIS)

    Perez A, M.; Gutierrez W, C.E.; Mondragon, G.; Arenas, J.

    2007-01-01

    The study of nanoparticles coalescence and silver nano rods phenomena by means of molecular dynamics simulation under the thermodynamic laws is reported. In this work we focus ourselves to see the conditions under which the one can be given one dimension growth of silver nano rods for the coalescence phenomenon among two nano rods or one nano rod and one particle; what allows us to study those structural, dynamic and morphological properties of the silver nano rods to different thermodynamic conditions. The simulations are carried out using the Sutton-Chen potentials of interaction of many bodies that allow to obtain appropriate results with the real physical systems. (Author)

  8. Void growth to coalescence in a non-local material

    DEFF Research Database (Denmark)

    Niordson, Christian Frithiof

    2008-01-01

    of different material length parameters in a multi-parameter theory is studied, and it is shown that the important length parameter is the same as under purely hydrostatic loading. It is quantified how micron scale voids grow less rapidly than larger voids, and the implications of this in the overall strength...... of the material is emphasized. The size effect on the onset of coalescence is studied, and results for the void volume fraction and the strain at the onset of coalescence are presented. It is concluded that for cracked specimens not only the void volume fraction, but also the typical void size is of importance...... to the fracture strength of ductile materials....

  9. Silicon—a new substrate for GaN growth

    Indian Academy of Sciences (India)

    Unknown

    of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the .... Considerable research is being carried out on GaN HEMTs at present. ... by InGaN/GaN multiquantum well in MOVPE was first.

  10. Computational approach for a pair of bubble coalescence process

    International Nuclear Information System (INIS)

    Nurul Hasan; Zalinawati binti Zakaria

    2011-01-01

    The coalescence of bubbles has great value in mineral recovery and oil industry. In this paper, two co-axial bubbles rising in a cylinder is modelled to study the coalescence of bubbles for four computational experimental test cases. The Reynolds' (Re) number is chosen in between 8.50 and 10, Bond number, Bo ∼4.25-50, Morton number, M 0.0125-14.7. The viscosity ratio (μ r ) and density ratio (ρ r ) of liquid to bubble are kept constant (100 and 850 respectively). It was found that the Bo number has significant effect on the coalescence process for constant Re, μ r and ρ r . The bubble-bubble distance over time was validated against published experimental data. The results show that VOF approach can be used to model these phenomena accurately. The surface tension was changed to alter the Bo and density of the fluids to alter the Re and M, keeping the μ r and ρ r the same. It was found that for lower Bo, the bubble coalesce is slower and the pocket at the lower part of the leading bubble is less concave (towards downward) which is supported by the experimental data.

  11. Coalescing black hole solution in the De-Sitter universe

    International Nuclear Information System (INIS)

    Ahmed, Mainuddin

    2005-01-01

    A new coalescing black hole solution of Einstein-Maxwell equation in general relativity is given. The new solution is also found to support the 'Nerst Theorem' of thermodynamics in the case of black hole. Thus this solution poses to solve an outstanding problem of thermodynamics and black hole physics. (author)

  12. Van der Waals Attraction and Coalescence of Aqueous Salt Nanodroplets

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Pavel; Buch, V.

    2003-01-01

    Roč. 68, č. 12 (2003), s. 2283-2291 ISSN 0010-0765 R&D Projects: GA MŠk LN00A032 Institutional research plan: CEZ:AV0Z4040901 Keywords : van der Waals interactions * aqueous droplets * coalescence Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.041, year: 2003

  13. A variational void coalescence model for ductile metals

    KAUST Repository

    Siddiq, Amir; Arciniega, Roman; El Sayed, Tamer

    2011-01-01

    We present a variational void coalescence model that includes all the essential ingredients of failure in ductile porous metals. The model is an extension of the variational void growth model by Weinberg et al. (Comput Mech 37:142-152, 2006

  14. Bubble Coalescence: Effect of Bubble Approach Velocity and Liquid Viscosity

    Czech Academy of Sciences Publication Activity Database

    Orvalho, Sandra; Růžička, Marek; Olivieri, G.; Marzocchella, A.

    2015-01-01

    Roč. 134, SEP 29 (2015), s. 205-216 ISSN 0009-2509 R&D Projects: GA MŠk(CZ) LD13018 Institutional support: RVO:67985858 Keywords : bubble coalescence * bubble approach velocity * liquid viscosity Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 2.750, year: 2015

  15. Study of shock coalescence in laser-irradiated targets

    International Nuclear Information System (INIS)

    Coe, S.E.; Willi, O.; Afshar-Rad, T.; Rose, S.J.

    1988-01-01

    We report on the first direct experimental observation of the coalescence of two shocks induced by a shaped laser pulse. Optical streak photography of the rear surface of aluminum multiple step targets was used to study the breakout of these shocks and observe their behavior. The experimental results are compared with simulations by a one-dimensional Lagrangian hydrodynamic code

  16. RenderGAN: Generating Realistic Labeled Data

    Directory of Open Access Journals (Sweden)

    Leon Sixt

    2018-06-01

    Full Text Available Deep Convolutional Neuronal Networks (DCNNs are showing remarkable performance on many computer vision tasks. Due to their large parameter space, they require many labeled samples when trained in a supervised setting. The costs of annotating data manually can render the use of DCNNs infeasible. We present a novel framework called RenderGAN that can generate large amounts of realistic, labeled images by combining a 3D model and the Generative Adversarial Network framework. In our approach, image augmentations (e.g., lighting, background, and detail are learned from unlabeled data such that the generated images are strikingly realistic while preserving the labels known from the 3D model. We apply the RenderGAN framework to generate images of barcode-like markers that are attached to honeybees. Training a DCNN on data generated by the RenderGAN yields considerably better performance than training it on various baselines.

  17. Study of epitaxial lateral overgrowth of semipolar (1 1 − 2 2) GaN by using different SiO2 pattern sizes

    International Nuclear Information System (INIS)

    Song, Ki-Ryong; Lee, Jae-Hwan; Han, Sang-Hyun; Yi, Hye-Rin; Lee, Sung-Nam

    2013-01-01

    Graphical abstract: - Highlights: • We examine comparative studies of semipolar ELO-GaN film. • Semipolar ELO-GaN film was grown by three step growth method. • The achievement of smooth surface morphology of semipolar ELO-GaN. • The crystal and optical properties was significantly improved by ELO process. - Abstract: We investigated the growth mode and the crystal properties of lateral epitaxial overgrowth (LEO) semipolar (1 1 − 2 2) GaN by using the various SiO 2 pattern sizes of 6, 8, 10 and 12 μm with the window width of 4.0 μm. By using three-step growth technique, we successfully obtained the fully-coalescenced semipolar (1 1 − 2 2) LEO-GaN films regardless of the SiO 2 pattern sizes. However, the coalescence thickness of LEO-GaN film was decreased with decreasing SiO 2 pattern size, indicating that the coalescence of semipolar (1 1 − 2 2) GaN was easily formed by decreasing the pattern size of SiO 2 mask. The full width at half maximums (FWHMs) of X-ray rocking curves (XRCs) of LEO-GaN films decreased with increasing SiO 2 pattern size. In the pattern size of 4 × 10 μm, we achieved the minimum XRCs FWHM of 537 and 368 arc s with two different X-ray incident beam directions of [1 1 − 2 − 3] and [1 − 1 0 0], respectively. Moreover, the photoluminescence bandedge emission of semipolar (1 1 − 2 2) GaN was 45 times increased by LEO process. Based on these results, we concluded that the LEO pattern size of 4 × 10 μm would effectively decrease crystal defects of semipolar (1 1 − 2 2) GaN epilayer, resulting in an improvement of the optical properties

  18. Gan-Hang tectonic belt and its geologic significance

    International Nuclear Information System (INIS)

    Deng Jiarui; Zhang Zhiping.

    1989-01-01

    Gan-Hang tectonic belt is predominantly controlled by Gan-Hang fracture zone. It is mainly composed of Yongfeng-Zhuji downwarping zone, Gan-Hang volcanic activity structural belt and Gan-Hang red basin downfaulted zone. Gan-Hang fracture zone is derived from evolution and development of Shaoxing-Jiangshan deep fracture. It is mainly composed of three deep and large fracture and Fuzhou-Yongfeng large fracture. The fracture zone is a long active belt, but in each active period the geologic structural patterns intensity, depth and forming time were not same. Gan-Hang tectonic belt possesses obvious inheritance. It has always maintained the character of the relative depression or low land since the Caledonian movement. This specific structural environment is favourable for uranium mineralization. At any rate, the formation of this uranium minerogenetic zone has been experiencing a long and complicated processes which were closely associated with long activity of Gan-Hang fracture zone

  19. Piezotronic Effect in Polarity-Controlled GaN Nanowires.

    Science.gov (United States)

    Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

    2015-08-25

    Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

  20. Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

    International Nuclear Information System (INIS)

    Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

    2006-01-01

    We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

  1. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas

    International Nuclear Information System (INIS)

    Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

    2015-01-01

    Growth of high-quality a-plane GaN layers was performed by reaction between Ga 2 O vapor and NH 3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga 2 O partial pressure. An a-plane GaN layer with a growth rate of 48 μm/h was obtained. The X-ray rocking curve (XRC) measurement showed that the full widths at half maximum (FWHMs) of GaN(112-bar0) with the incident beam parallel and perpendicular to the [0001] direction were 29–43 and 29–42 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement revealed that oxygen concentration decreased at a high temperature. These results suggest that growth of a-GaN layers using Ga 2 O vapor and NH 3 gas at a high temperature enables the generation of high-quality crystals. (author)

  2. Coalescence and Interaction of Solitons in the Coupled Korteweg-de Vries System

    Science.gov (United States)

    Chung, Wai Choi; Chow, Kwok Wing

    2017-11-01

    There are many physical systems which are governed by the classical Korteweg-de Vries equation. One of the prominent examples is the shallow water wave in fluid dynamics. In recent years, a coupled Korteweg-de Vries system has been proposed to describe fluids in a two-layer flow, and coherent structures in terms of solitons are found. We studied the coupled Korteweg-de Vries system by means of the Hirota bilinear method. Soliton and breather solutions are constructed. Localized pulses which result from the coupling of waves can be formed. The structure of the localized pulses becomes asymmetric as the control parameter varies. The coalescence and interaction of solitons in the coupled Korteweg-de Vries system will be discussed. Partial financial support has been provided by the Research Grants Council contract HKU 17200815.

  3. Implantation doping of GaN

    International Nuclear Information System (INIS)

    Zolper, J.C.

    1996-01-01

    Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)

  4. Coalescing colony model: Mean-field, scaling, and geometry

    Science.gov (United States)

    Carra, Giulia; Mallick, Kirone; Barthelemy, Marc

    2017-12-01

    We analyze the coalescing model where a `primary' colony grows and randomly emits secondary colonies that spread and eventually coalesce with it. This model describes population proliferation in theoretical ecology, tumor growth, and is also of great interest for modeling urban sprawl. Assuming the primary colony to be always circular of radius r (t ) and the emission rate proportional to r (t) θ , where θ >0 , we derive the mean-field equations governing the dynamics of the primary colony, calculate the scaling exponents versus θ , and compare our results with numerical simulations. We then critically test the validity of the circular approximation for the colony shape and show that it is sound for a constant emission rate (θ =0 ). However, when the emission rate is proportional to the perimeter, the circular approximation breaks down and the roughness of the primary colony cannot be discarded, thus modifying the scaling exponents.

  5. Coalescence of rotating black holes on Eguchi-Hanson space

    International Nuclear Information System (INIS)

    Matsuno, Ken; Ishihara, Hideki; Kimura, Masashi; Tomizawa, Shinya

    2007-01-01

    We obtain new charged rotating multi-black hole solutions on the Eguchi-Hanson space in the five-dimensional Einstein-Maxwell system with a Chern-Simons term and a positive cosmological constant. In the two-black holes case, these solutions describe the coalescence of two rotating black holes with the horizon topologies of S 3 into a single rotating black hole with the horizon topology of the lens space L(2;1)=S 3 /Z 2 . We discuss the differences in the horizon areas between our solutions and the two-centered Klemm-Sabra solutions which describe the coalescence of two rotating black holes with the horizon topologies of S 3 into a single rotating black hole with the horizon topology of S 3

  6. Second harmonic electromagnetic emission via Langmuir wave coalescence

    International Nuclear Information System (INIS)

    Willes, A.J.; Robinson, P.A.; Melrose, D.B.

    1996-01-01

    The coalescence of Langmuir waves to produce electromagnetic waves at twice the plasma frequency is considered. A simplified expression for the rate of production of second harmonic electromagnetic waves is obtained for a broad class of Langmuir spectra. In addition, two different analytic approximations are considered. The validity of the commonly used head-on approximation is explored, in which the two coalescing Langmuir waves are assumed to approach from opposite directions. This approximation breaks down at low Langmuir wavenumbers, and for narrow Langmuir wave spectra. A second, more general, approximation is introduced, called the narrow-spectrum approximation, which requires narrow spectral widths of the Langmuir spectra. The advantages of this approximation are that it does not break down at low Langmuir wavenumbers, and that it remains valid for relatively broad Langmuir wave spectra. Finally, the applicability of these approximations in treating harmonic radiation in type III solar radio bursts is discussed. copyright 1996 American Institute of Physics

  7. Void growth and coalescence in metals deformed at elevated temperature

    DEFF Research Database (Denmark)

    Klöcker, H.; Tvergaard, Viggo

    2000-01-01

    For metals deformed at elevated temperatures the growth of voids to coalescence is studied numerically. The voids are assumed to be present from the beginning of deformation, and the rate of deformation considered is so high that void growth is dominated by power law creep of the material, without...... any noticeable effect of surface diffusion. Axisymmetric unit cell model computations are used to study void growth in a material containing a periodic array of voids, and the onset of the coalescence process is defined as the stage where plastic flow localizes in the ligaments between neighbouring...... voids. The focus of the study is on various relatively high stress triaxialties. In order to represent the results in terms of a porous ductile material model a set of constitutive relations are used, which have been proposed for void growth in a material undergoing power law creep....

  8. A variational void coalescence model for ductile metals

    KAUST Repository

    Siddiq, Amir

    2011-08-17

    We present a variational void coalescence model that includes all the essential ingredients of failure in ductile porous metals. The model is an extension of the variational void growth model by Weinberg et al. (Comput Mech 37:142-152, 2006). The extended model contains all the deformation phases in ductile porous materials, i.e. elastic deformation, plastic deformation including deviatoric and volumetric (void growth) plasticity followed by damage initiation and evolution due to void coalescence. Parametric studies have been performed to assess the model\\'s dependence on the different input parameters. The model is then validated against uniaxial loading experiments for different materials. We finally show the model\\'s ability to predict the damage mechanisms and fracture surface profile of a notched round bar under tension as observed in experiments. © Springer-Verlag 2011.

  9. GaN based nanorods for solid state lighting

    Energy Technology Data Exchange (ETDEWEB)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  10. Coalescence-induced jumping of micro-droplets on heterogeneous superhydrophobic surfaces

    Science.gov (United States)

    Attarzadeh, Reza; Dolatabadi, Ali

    2017-01-01

    The phenomenon of droplets coalescence-induced self-propelled jumping on homogeneous and heterogeneous superhydrophobic surfaces was numerically modeled using the volume of fluid method coupled with a dynamic contact angle model. The heterogeneity of the surface was directly modeled as a series of micro-patterned pillars. To resolve the influence of air around a droplet and between the pillars, extensive simulations were performed for different droplet sizes on a textured surface. Parallel computations with the OpenMP algorithm were used to accelerate computation speed to meet the convergence criteria. The composition of the air-solid surface underneath the droplet facilitated capturing the transition from a no-slip/no-penetration to a partial-slip with penetration as the contact line at triple point started moving to the air pockets. The wettability effect from the nanoscopic roughness and the coating was included in the model by using the intrinsic contact angle obtained from a previously published study. As the coalescence started, the radial velocity of the coalescing liquid bridge was partially reverted to the upward direction due to the counter-action of the surface. However, we found that the velocity varied with the size of the droplets. A part of the droplet kinetic energy was dissipated as the merged droplet started penetrating into the cavities. This was due to a different area in contact between the liquid and solid and, consequently, a higher viscous dissipation rate in the system. We showed that the effect of surface roughness is strongly significant when the size of the micro-droplet is comparable with the size of the roughness features. In addition, the relevance of droplet size to surface roughness (critical relative roughness) was numerically quantified. We also found that regardless of the viscous cutoff radius, as the relative roughness approached the value of 44, the direct inclusion of surface topography was crucial in the modeling of the

  11. GaN membrane MSM ultraviolet photodetectors

    Science.gov (United States)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  12. Characteristic dynamics near two coalescing eigenvalues incorporating continuum threshold effects

    Science.gov (United States)

    Garmon, Savannah; Ordonez, Gonzalo

    2017-06-01

    It has been reported in the literature that the survival probability P(t) near an exceptional point where two eigenstates coalesce should generally exhibit an evolution P (t ) ˜t2e-Γ t, in which Γ is the decay rate of the coalesced eigenstate; this has been verified in a microwave billiard experiment [B. Dietz et al., Phys. Rev. E 75, 027201 (2007)]. However, the heuristic effective Hamiltonian that is usually employed to obtain this result ignores the possible influence of the continuum threshold on the dynamics. By contrast, in this work we employ an analytical approach starting from the microscopic Hamiltonian representing two simple models in order to show that the continuum threshold has a strong influence on the dynamics near exceptional points in a variety of circumstances. To report our results, we divide the exceptional points in Hermitian open quantum systems into two cases: at an EP2A two virtual bound states coalesce before forming a resonance, anti-resonance pair with complex conjugate eigenvalues, while at an EP2B two resonances coalesce before forming two different resonances. For the EP2B, which is the case studied in the microwave billiard experiment, we verify that the survival probability exhibits the previously reported modified exponential decay on intermediate time scales, but this is replaced with an inverse power law on very long time scales. Meanwhile, for the EP2A the influence from the continuum threshold is so strong that the evolution is non-exponential on all time scales and the heuristic approach fails completely. When the EP2A appears very near the threshold, we obtain the novel evolution P (t ) ˜1 -C1√{t } on intermediate time scales, while further away the parabolic decay (Zeno dynamics) on short time scales is enhanced.

  13. Bubble coalescence dynamics and supersaturation in electrolytic gas evolution

    Energy Technology Data Exchange (ETDEWEB)

    Stover, R.L. [Univ. of California, Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley National Lab., CA (United States). Energy and Environment Div.

    1996-08-01

    The apparatus and procedures developed in this research permit the observation of electrolytic bubble coalescence, which heretofore has not been possible. The influence of bubble size, electrolyte viscosity, surface tension, gas type, and pH on bubble coalescence was examined. The Navier-Stokes equations with free surface boundary conditions were solved numerically for the full range of experimental variables that were examined. Based on this study, the following mechanism for bubble coalescence emerges: when two gas bubbles coalesce, the surface energy decreases as the curvature and surface area of the resultant bubble decrease, and the energy is imparted into the surrounding liquid. The initial motion is driven by the surface tension and slowed by the inertia and viscosity of the surrounding fluid. The initial velocity of the interface is approximately proportional to the square root of the surface tension and inversely proportional to the square root of the bubble radius. Fluid inertia sustains the oblate/prolate oscillations of the resultant bubble. The period of the oscillations varies with the bubble radius raised to the 3/2 power and inversely with the square root of the surface tension. Viscous resistance dampens the oscillations at a rate proportional to the viscosity and inversely proportional to the square of the bubble radius. The numerical simulations were consistent with most of the experimental results. The differences between the computed and measured saddle point decelerations and periods suggest that the surface tension in the experiments may have changed during each run. By adjusting the surface tension in the simulation, a good fit was obtained for the 150-{micro}m diameter bubbles. The simulations fit the experiments on larger bubbles with very little adjustment of surface tension. A more focused analysis should be done to elucidate the phenomena that occur in the receding liquid film immediately following rupture.

  14. A particle system with cooperative branching and coalescence

    Czech Academy of Sciences Publication Activity Database

    Sturm, A.; Swart, Jan M.

    2015-01-01

    Roč. 25, č. 3 (2015), s. 1616-1649 ISSN 1050-5164 R&D Projects: GA ČR GAP201/10/0752 Institutional support: RVO:67985556 Keywords : interacting particle system * cooperative branching * coalescence * phase transition * upper invariant law * survival * extinction Subject RIV: BA - General Mathematics Impact factor: 1.755, year: 2015 http://library.utia.cas.cz/separaty/2015/SI/swart-0442871.pdf

  15. Gravitational wave emission from the coalescence of white dwarfs

    International Nuclear Information System (INIS)

    Garcia-Berro, E; Loren-Aguilar, P; Isern, J; Pedemonte, A G; Guerrero, J; Lobo, J A

    2005-01-01

    We have computed the gravitational wave emission arising from the coalescence of several close white dwarf binary systems. In order to do so, we have followed the evolution of such systems using a smoothed particle hydrodynamics code. Here we present some of the results obtained so far, paying special attention to the detectability of the emitted gravitational waves. Within this context, we show which could be the impact of individual merging episodes for LISA

  16. Nickel, copper and cobalt coalescence in copper cliff converter slag

    Directory of Open Access Journals (Sweden)

    Wolf A.

    2016-01-01

    Full Text Available The aim of this investigation is to assess the effect of various additives on coalescence of nickel, copper and cobalt from slags generated during nickel extraction. The analyzed fluxes were silica and lime while examined reductants were pig iron, ferrosilicon and copper-silicon compound. Slag was settled at the different holding temperatures for various times in conditions that simulated the industrial environment. The newly formed matte and slag were characterized by their chemical composition and morphology. Silica flux generated higher partition coefficients for nickel and copper than the addition of lime. Additives used as reducing agents had higher valuable metal recovery rates and corresponding partition coefficients than fluxes. Microstructural studies showed that slag formed after adding reductants consisted of primarily fayalite, with some minute traces of magnetite as the secondary phase. Addition of 5 wt% of pig iron, ferrosilicon and copper-silicon alloys favored the formation of a metallized matte which increased Cu, Ni and Co recoveries. Addition of copper-silicon alloys with low silicon content was efficient in copper recovery but coalescence of the other metals was low. Slag treated with the ferrosilicon facilitated the highest cobalt recovery while copper-silicon alloys with silicon content above 10 wt% resulted in high coalescence of nickel and copper, 87 % and 72 % respectively.

  17. A PIV Study of Drop-interface Coalescence with Surfactants

    Science.gov (United States)

    Weheliye, Weheliye Hashi; Dong, Teng; Angeli, Panagiota

    2017-11-01

    In this work, the coalescence of a drop with an aqueous-organic interface was studied by Particle Image Velocimetry (PIV). The effect of surfactants on the drop surface evolution, the vorticity field and the kinetic energy distribution in the drop during coalescence were investigated. The coalescence took place in an acrylic rectangular box with 79% glycerol solution at the bottom and Exxsol D80 oil above. The glycerol solution drop was generated through a nozzle fixed at 2cm above the aqueous/oil interface and was seeded with Rhodamine particles. The whole process was captured by a high-speed camera. Different mass ratios of non-ionic surfactant Span80 to oil were studied. The increase of surfactant concentration promoted deformation of the interface before the rupture of the trapped oil film. At the early stages after film rupture, two counter-rotating vortices appeared at the bottom of the drop which then travelled to the upper part. The propagation rates, as well as the intensities of the vortices decreased at high surfactant concentrations. At early stages, the kinetic energy was mainly distributed near the bottom part of the droplet, while at later stages it was distributed near the upper part of the droplet. Programme Grant MEMPHIS, Chinese Scholarship Council (CSC).

  18. Induced defects in neutron irradiated GaN single crystals

    International Nuclear Information System (INIS)

    Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

    2005-01-01

    The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

  19. GaN Nanowire Arrays for High-Output Nanogenerators

    KAUST Repository

    Huang, Chi-Te

    2010-04-07

    Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

  20. Development and validation of models for bubble coalescence and breakup

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Yiaxiang

    2013-10-08

    A generalized model for bubble coalescence and breakup has been developed, which is based on a comprehensive survey of existing theories and models. One important feature of the model is that all important mechanisms leading to bubble coalescence and breakup in a turbulent gas-liquid flow are considered. The new model is tested extensively in a 1D Test Solver and a 3D CFD code ANSYS CFX for the case of vertical gas-liquid pipe flow under adiabatic conditions, respectively. Two kinds of extensions of the standard multi-fluid model, i.e. the discrete population model and the inhomogeneous MUSIG (multiple-size group) model, are available in the two solvers, respectively. These extensions with suitable closure models such as those for coalescence and breakup are able to predict the evolution of bubble size distribution in dispersed flows and to overcome the mono-dispersed flow limitation of the standard multi-fluid model. For the validation of the model the high quality database of the TOPFLOW L12 experiments for air-water flow in a vertical pipe was employed. A wide range of test points, which cover the bubbly flow, turbulent-churn flow as well as the transition regime, is involved in the simulations. The comparison between the simulated results such as bubble size distribution, gas velocity and volume fraction and the measured ones indicates a generally good agreement for all selected test points. As the superficial gas velocity increases, bubble size distribution evolves via coalescence dominant regimes first, then breakup-dominant regimes and finally turns into a bimodal distribution. The tendency of the evolution is well reproduced by the model. However, the tendency is almost always overestimated, i.e. too much coalescence in the coalescence dominant case while too much breakup in breakup dominant ones. The reason of this problem is discussed by studying the contribution of each coalescence and breakup mechanism at different test points. The redistribution of the

  1. Development and validation of models for bubble coalescence and breakup

    International Nuclear Information System (INIS)

    Liao, Yiaxiang

    2013-01-01

    A generalized model for bubble coalescence and breakup has been developed, which is based on a comprehensive survey of existing theories and models. One important feature of the model is that all important mechanisms leading to bubble coalescence and breakup in a turbulent gas-liquid flow are considered. The new model is tested extensively in a 1D Test Solver and a 3D CFD code ANSYS CFX for the case of vertical gas-liquid pipe flow under adiabatic conditions, respectively. Two kinds of extensions of the standard multi-fluid model, i.e. the discrete population model and the inhomogeneous MUSIG (multiple-size group) model, are available in the two solvers, respectively. These extensions with suitable closure models such as those for coalescence and breakup are able to predict the evolution of bubble size distribution in dispersed flows and to overcome the mono-dispersed flow limitation of the standard multi-fluid model. For the validation of the model the high quality database of the TOPFLOW L12 experiments for air-water flow in a vertical pipe was employed. A wide range of test points, which cover the bubbly flow, turbulent-churn flow as well as the transition regime, is involved in the simulations. The comparison between the simulated results such as bubble size distribution, gas velocity and volume fraction and the measured ones indicates a generally good agreement for all selected test points. As the superficial gas velocity increases, bubble size distribution evolves via coalescence dominant regimes first, then breakup-dominant regimes and finally turns into a bimodal distribution. The tendency of the evolution is well reproduced by the model. However, the tendency is almost always overestimated, i.e. too much coalescence in the coalescence dominant case while too much breakup in breakup dominant ones. The reason of this problem is discussed by studying the contribution of each coalescence and breakup mechanism at different test points. The redistribution of the

  2. Using acoustics to study and stimulate the coalescence of oil drops surrounded by water

    Energy Technology Data Exchange (ETDEWEB)

    Gardner, E.A.; Apfel, R.E. (Yale Univ., New Haven, CT (United States). Dept. of Mechanical Engineering)

    1993-08-01

    The coalescence of oil drops in water is studied using acoustic levitation and stimulated with acoustic cavitation. Unlike most earlier studies, which investigate the coalescence of a single drop with an initially planar interface, the use of acoustic radiation forces allows two drops to be brought into contact and allowed to coalesce. The acoustic technique has the advantage over other drop-drop coalescence systems in that the drops remain in contact until they coalesce without the use of solid supports to control them. Additionally, acoustic cavitation is observed to deposit sufficient energy in the oil-water interface to trigger the coalescence of a pair of 2-mm-diameter drops. This stimulation mechanism could have application to emulsion breaking. Some of the factors that affect spontaneous and stimulated coalescence are investigated.

  3. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    Science.gov (United States)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-10-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

  4. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-01-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior

  5. Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

    KAUST Repository

    Conroy, Michele Ann; Li, Haoning; Kusch, Gunnar; Zhao, Chao; Ooi, Boon S.; Paul, Edwards; Martin, Robert; Holmes, Justin D.; Parbrook, Peter

    2016-01-01

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

  6. Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

    KAUST Repository

    Conroy, Michele Ann

    2016-03-10

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

  7. Exciton Emission from Bare and Alq3/Gold Coated GaN Nanorods

    Science.gov (United States)

    Mohammadi, Fatemesadat; Kuhnert, Gerd; Hommel, Detlef; Schmitzer, Heidrun; Wagner, Hans-Peter

    We study the excitonic and impurity related emission in bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature-dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL). The GaN nanorods were grown by molecular beam epitaxy. Alq3 as well as Alq3/gold covered nanorods were synthesized by organic molecular beam deposition. In the near-band edge region a donor-bound-exciton (D0X) emission is observed at 3.473 eV. Another emission band at 3.275 eV reveals LO-phonon replica and is attributed to a donor-acceptor-pair (DAP) luminescence. TR PL traces at 20 K show a nearly biexponential decay for the D0X with lifetimes of approximately 180 and 800 ps for both bare and Alq3 coated nanorods. In GaN nanorods which were coated with an Alq3 film and subsequently with a 10 nm thick gold layer we observe a PL quenching of D0X and DAP band and the lifetimes of the D0X transition shorten. The quenching behaviour is partially attributed to the energy-transfer from free excitons and donor-bound-excitons to plasmon oscillations in the gold layer.

  8. Amphoteric arsenic in GaN

    CERN Document Server

    Wahl, U; Araújo, J P; Rita, E; Soares, JC

    2007-01-01

    We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As$\\scriptstyle_{Ga}\\,$ " anti-sites ” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “ miscibility gap ” in ternary GaAs$\\scriptstyle_{1-x}$N$\\scriptstyle_{x}$ compounds, which cannot be grown with a single phase for values of $x$ in the range 0.1<${x}$< 0.99.

  9. Excitonic transitions in homoepitaxial GaN

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Criado, G.; Cros, A.; Cantarero, A. [Materials Science Inst. and Dept. of Applied Physics, Univ. of Valencia (Spain); Miskys, C.R.; Ambacher, O.; Stutzmann, M. [Technische Univ. Muenchen, Garching (Germany). Walter-Schottky-Inst. fuer Physikalische Grundlagen der Halbleiterelektronik

    2001-11-08

    The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature. (orig.)

  10. Breakup and coalescence characteristics of a hollow cone swirling spray

    Science.gov (United States)

    Saha, Abhishek; Lee, Joshua D.; Basu, Saptarshi; Kumar, Ranganathan

    2012-12-01

    This paper deals with an experimental study of the breakup characteristics of water emanating from hollow cone hydraulic injector nozzles induced by pressure-swirling. The experiments were conducted using two nozzles with different orifice diameters 0.3 mm and 0.5 mm and injection pressures (0.3-4 MPa) which correspond to Rep = 7000-26 000. Two types of laser diagnostic techniques were utilized: shadowgraph and phase Doppler particle anemometry for a complete study of the atomization process. Measurements that were made in the spray in both axial and radial directions indicate that both velocity and average droplet diameter profiles are highly dependent on the nozzle characteristics, Weber number and Reynolds number. The spatial variation of diameter and velocity arises principally due to primary breakup of liquid films and subsequent secondary breakup of large droplets due to aerodynamic shear. Downstream of the nozzle, coalescence of droplets due to collision was also found to be significant. Different types of liquid film breakup were considered and found to match well with the theory. Secondary breakup due to shear was also studied theoretically and compared to the experimental data. Coalescence probability at different axial and radial locations was computed to explain the experimental results. The spray is subdivided into three zones: near the nozzle, a zone consisting of film and ligament regime, where primary breakup and some secondary breakup take place; a second zone where the secondary breakup process continues, but weakens, and the centrifugal dispersion becomes dominant; and a third zone away from the spray where coalescence is dominant. Each regime has been analyzed in detail, characterized by timescale and Weber number and validated using experimental data.

  11. Micromechanics of transformation-induced plasticity and variant coalescence

    International Nuclear Information System (INIS)

    Marketz, F.; Fischer, F.D.; University for Mining and Metallurgy, Leoben; Tanaka, K.

    1996-01-01

    Quantitative micromechanics descriptions of both transformation-induced plasticity (TRIP) associated with the martensitic transformation in an Fe-Ni alloy and of variant coalescence in a Cu-Al-Ni shape memory alloy are presented. The macroscopic deformation behavior of a polycrystalline aggregate as a result of the rearrangements within the crystallites is modelled with the help of a finite element based periodic microfield approach. In the case of TRIP the parent→martensite transformation is described by microscale thermodynamic and kinetic equations taking into account internal stress states. The simulation of a classical experiment on TRIP allows to quantify the Magee-effect and the Greenwood-Johnson effect. Furthermore, the development of the martensitic microstructure is studied with respect to the stress-assisted transformation of preferred variants. In the case of variant coalescence the strain energy due to internal stress states has an important influence on the mechanical behavior. Formulating the reorientation process on the size scale of self-accommodating plate groups in terms of the mobility of the boundaries between martensitic variants the macroscopic behavior in uniaxial tension is predicted by an incremental modelling procedure. Furthermore, influence of energy dissipation on the overall behavior is quantified. (orig.)

  12. P-type doping of GaN

    International Nuclear Information System (INIS)

    Wong, R.K.

    2000-01-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover

  13. P-type doping of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)

    2000-04-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  14. Stage of GAN (Grupo de Analise do Nucleo) calculus methodology

    International Nuclear Information System (INIS)

    Silva, C.F. da.

    1987-11-01

    This Technical Note presents the stage of GAN Calculus Methodology in areas of Neutronics, Fuel Rod Performance and Fission Products Inventory. Proposals of GAN's members are presented and analyzed for each of these areas and a work schedule is established. (author)

  15. Review of the Dynamics of Coalescence and Demulsification by High-Voltage Pulsed Electric Fields

    Directory of Open Access Journals (Sweden)

    Ye Peng

    2016-01-01

    Full Text Available The coalescence of droplets in oil can be implemented rapidly by high-voltage pulse electric field, which is an effective demulsification dehydration technological method. At present, it is widely believed that the main reason of pulse electric field promoting droplets coalescence is the dipole coalescence and oscillation coalescence in pulse electric field, and the optimal coalescence pulse electric field parameters exist. Around the above content, the dynamics of high-voltage pulse electric field promoting the coalescence of emulsified droplets is studied by researchers domestically and abroad. By review, the progress of high-voltage pulse electric field demulsification technology can get a better understanding, which has an effect of throwing a sprat to catch a whale on promoting the industrial application.

  16. Experimental investigation of void coalescence in a dual phase steel using X-ray tomography

    International Nuclear Information System (INIS)

    Landron, C.; Bouaziz, O.; Maire, E.; Adrien, J.

    2013-01-01

    In situ tensile tests were carried out during X-ray microtomography imaging of a smooth and a notched specimen of dual phase steel. The void coalescence was first qualitatively observed and quantitative data concerning this damage step was then acquired. The void coalescence criteria of Brown and Embury and of Thomason were then tested against the experimental data at both the macroscopic and local levels. Although macroscopic implementation of the criteria gave acceptable results, the local approach was probably closest to the real nature of void coalescence, because it takes into account local coalescence events observed experimentally before final fracture. The correlation between actual coalescing couples of cavities and local implementation of the two criteria showed that the Thomason criterion is probably the best adapted to predict the local coalescence events in the case of the material studied

  17. Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

    Energy Technology Data Exchange (ETDEWEB)

    Tarnawska, Lidia

    2012-12-19

    topography of the films is characterized by scanning electron microscopy and chemical inter-diffusion is investigated by energy-dispersive X-ray spectroscopy. The nucleation processes of the GaN on Sc{sub 2}O{sub 3} buffer are followed in-situ by reflection high energy electron diffraction and the interface chemistry is analyzed by means of X-ray photoelectron spectroscopy. Results: It is found, that the Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer approach provides a template of high structural quality for GaN overgrowth. The bi-layer buffer plays a lattice match mediator role between GaN and Si and acts as a barrier against impurity diffusion. GaN grown on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) templates is single crystalline with a wurtzite structure and (0001) oriented. Due to the -8% lattice mismatch between GaN and Sc{sub 2}O{sub 3}, GaN growth proceeds by the nucleation of 3D islands. The size of the islands, coalescence time and the relaxation process depend on the GaN growth conditions and have a strong influence on the topography of closed layers, crystalline quality (defect density) as well as optical properties. The best GaN material parameters are obtained for the layers grown in Ga-rich regime when the Ga/N ratio is slightly higher than unity. The main three defects found in the um-thick GaN layers are (a) threading dislocation, with density in the order of 10{sup 10} cm{sup -2}, (b) stacking faults, resulting in cubic inclusions in the hexagonal matrix and (c) inversion domain boundaries causing Ga-polar regions in the mainly N-polar film. A theoretical GaN/Sc{sub 2}O{sub 3} interface model is discussed to explain these experimental findings. Despite the relatively large number of structural defects, photoluminescence shows sharp and strong donor-bound exciton transition and very low intensity yellow emission, which indicate that GaN layers grown on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) are promising for future optoelectronic applications. Outlook

  18. Polarization Raman spectroscopy of GaN nanorod bundles

    International Nuclear Information System (INIS)

    Tite, T.; Lee, C. J.; Chang, Y.-M.

    2010-01-01

    We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.

  19. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

    International Nuclear Information System (INIS)

    Zhao Danmei; Zhao Degang; Jiang Desheng; Liu Zongshun; Zhu Jianjun; Chen Ping; Liu Wei; Li Xiang; Shi Ming

    2015-01-01

    A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between GaN and AlN, GaN grown directly above an AlN buffer layer on the Si substrate turns out to be of poor quality. In this study, a GaN transition layer is grown additionally on the AlN buffer before the GaN epitaxial growth. By changing the growth conditions of the GaN transition layer, we can control the growth and merging of islands and control the transfer time from 3D to 2D growth mode. With this method, the crystalline quality of the GaN epitaxial layer can be improved and the crack density is reduced. Here, we have investigated the impact of a transition layer on the crystalline quality and stress evolution of a GaN epitaxial layer with methods of X-ray diffraction, optical microscopy and in situ reflectivity trace. With the increasing thickness of transition layer, the crack decreases and the crystalline quality is improved. But when the transition layer exceeds a critical thickness, the crystalline quality of the epilayer becomes lower and the crack density increases. (paper)

  20. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)

    2016-04-13

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  1. Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

    Science.gov (United States)

    Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

    2018-05-01

    A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

  2. Investigation of GaN LED with Be-implanted Mg-doped GaN layer

    International Nuclear Information System (INIS)

    Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

    2004-01-01

    We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

  3. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

    International Nuclear Information System (INIS)

    Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

    2009-01-01

    The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

  4. Nonlinear characterization of GaN HEMT

    International Nuclear Information System (INIS)

    Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng

    2010-01-01

    DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

  5. Coalescence of Black Hole-Neutron Star Binaries

    Directory of Open Access Journals (Sweden)

    Masaru Shibata

    2011-08-01

    Full Text Available We review the current status of general relativistic studies for the coalescence of black hole-neutron star (BH-NS binaries. First, procedures for a solution of BH-NS binaries in quasi-equilibrium circular orbits and the numerical results, such as quasi-equilibrium sequence and mass-shedding limit, of the high-precision computation, are summarized. Then, the current status of numerical-relativity simulations for the merger of BH-NS binaries is described. We summarize our understanding for the merger and/or tidal disruption processes, the criterion for tidal disruption, the properties of the remnant formed after the tidal disruption, gravitational waveform, and gravitational-wave spectrum.

  6. Molecular dynamics of coalescence and collisions of silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guevara-Chapa, Enrique, E-mail: enrique_guevara@hotmail.com [Universidad Autónoma de Nuevo León, Facultad de Ciencias Físico Matemáticas (Mexico); Mejía-Rosales, Sergio [Universidad Autónoma de Nuevo León, Center for Innovation, Research and Development in Engineering and Technology (CIIDIT), and CICFIM-Facultad de Ciencias Físico Matemáticas (Mexico)

    2014-12-15

    We study how different relative orientations and impact velocity on the collision of two silver nanoparticles affect the first stages of the formation of a new, larger nanoparticle. In order to do this, we implemented a set of molecular dynamics simulations on the NVE ensemble on pairs of silver icosahedral nanoparticles at several relative orientations, that allowed us to follow the dynamics of the first nanoseconds of the coalescence processes. Using bond angle analysis, we found that the initial relative orientation of the twin planes has a critical role on the final stability of the resulting particle, and on the details of the dynamics itself. When the original particles have their closest twins aligned to each other, the formed nanoparticle will likely stabilize its structure onto a particle with a defined center and a low surface-to-volume ratio, while nanoparticles with misaligned twins will promote the formation of highly defective particles with a high inner energy.

  7. Void migration, coalescence and swelling in fusion materials

    International Nuclear Information System (INIS)

    Cottrell, G.A.

    2003-01-01

    A recent analysis of the migration of voids and bubbles, produced in neutron irradiated fusion materials, is outlined. The migration, brought about by thermal hopping of atoms on the surface of a void, is normally a random Brownian motion but, in a temperature gradient, can be slightly biassed up the gradient. Two effects of such migrations are the transport of voids and trapped transmutation helium atoms to grain boundaries, where embrittlement may result; and the coalescence of migrating voids, which reduces the number of non-dislocation sites available for the capture of knock-on point defects and thereby enables the dislocation bias process to maintain void swelling. A selection of candidate fusion power plant armour and structural metals have been analysed. The metals most resistant to void migration and its effects are tungsten and molybdenum. Steel and beryllium are least so and vanadium is intermediate

  8. Molecular dynamics of coalescence and collisions of silver nanoparticles

    International Nuclear Information System (INIS)

    Guevara-Chapa, Enrique; Mejía-Rosales, Sergio

    2014-01-01

    We study how different relative orientations and impact velocity on the collision of two silver nanoparticles affect the first stages of the formation of a new, larger nanoparticle. In order to do this, we implemented a set of molecular dynamics simulations on the NVE ensemble on pairs of silver icosahedral nanoparticles at several relative orientations, that allowed us to follow the dynamics of the first nanoseconds of the coalescence processes. Using bond angle analysis, we found that the initial relative orientation of the twin planes has a critical role on the final stability of the resulting particle, and on the details of the dynamics itself. When the original particles have their closest twins aligned to each other, the formed nanoparticle will likely stabilize its structure onto a particle with a defined center and a low surface-to-volume ratio, while nanoparticles with misaligned twins will promote the formation of highly defective particles with a high inner energy

  9. Coalescence kinetics of dispersed crude oil in a laboratory reactor

    International Nuclear Information System (INIS)

    Sterling, M.C. Jr.; Ojo, T.; Autenrieth, R.L.; Bonner, J.S.; Page, C.A.; Ernst, A.N.S.

    2002-01-01

    A study was conducted to examine the effects of salinity and mixing energy on the resurfacing and coalescence rates of chemically dispersed crude oil droplets. This kinetic study involved the use of mean shear rates to characterize the mixing energy in a laboratory reactor. Coagulation kinetics of dispersed crude oil were determined within a range of mean shear rates of 5, 10, 15, and 20 per second, and with salinity values of 10 and 30 per cent. Observed droplet distributions were fit to a transport-reaction model to estimate collision efficiency values and their dependence on salinity and mixing energy. Dispersant efficiencies were compared with those derived from other laboratory testing methods. Experimentally determined dispersant efficiencies were found to be 10 to 50 per cent lower than predicted using a non-interacting droplet model, but dispersant efficiencies were higher than those predicted using other testing methods. 24 refs., 1 tab., 3 figs

  10. Collisionless magnetic reconnection associated with coalescence of flux bundles

    International Nuclear Information System (INIS)

    Tanaka, Motohiko.

    1994-11-01

    The basic process of collisionless reconnection is studied in terms of coalescence of magnetized flux bundles using an implicit particle simulation of two-dimensions. The toroidal electric field that directly relates to magnetic reconnection is generated solenoidally in a region much broader than the current sheet whose width is a few electron skin depths. The reconnected flux increases linearly in time, but it is insensitive to finite Larmor radii of the ions in this Sweet-Parker regime. The toroidal electric field is controlled by a balance of transit acceleration of finite-mass electrons and their removal by sub-Alfvenic E x B drift outflow. The simulation results supports the collisionless Ohm's law E t ≅η eq J t with η eq the inertia resistivity. (author)

  11. Crack growth by micropore coalescence at high temperatures

    International Nuclear Information System (INIS)

    Beere, W.

    1981-01-01

    At high temperatures in the creep regime the stress distribution around a crack is different from the low temperature elastically generated distribution. The stress distribution ahead of the crack is calculated for a crack preceded by an array of growing cavities. The cavities maintain a displacement wedge ahead of the crack. When the displacement wedge is less than one-tenth the crack length the driving force for crack growth is similar to an all elastically loaded crack. When the deforming wedge exceeds the crack length the net section stress controls crack growth. An expression is derived for a crack growing by the growth and coalescence of cavities situated in the crack plane. It is predicted that at high temperatures above a critical stress intensity, the crack propagates in a brittle fashion. (author)

  12. On-Chip generation of polymer microcapsules through droplet coalescence

    Science.gov (United States)

    Eqbal, Md Danish; Gundabala, Venkat; Gundabala lab Team

    Alginate microbeads and microcapsules have numerous applications in drug delivery, tissue engineering and other biomedical areas due to their unique properties. Microcapsules with liquid core are of particular interest in the area of cell encapsulation. Various methods such as coacervation, emulsification, micro-nozzle, etc. exist for the generation of microbeads and microcapsules. However, these methods have several drawbacks like coagulation, non-uniformity, and polydispersity. In this work we present a method for complete on chip generation of alginate microcapsules (single core as well as double core) through the use of droplet merging technique. For this purpose, a combined Coflow and T-junction configuration is implemented in a hybrid glass-PDMS (Polydimethylsiloxane) microfluidic device. Efficient generation is achieved through precise matching of the generation rates of the coalescing drops. Through this approach, microcapsules with intact single and double (liquid) cores surrounded by alginate shell have been successfully generated and characterized.

  13. Determination of carrier diffusion length in GaN

    Science.gov (United States)

    Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

    2015-01-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.

  14. Interaction of GaN epitaxial layers with atomic hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

    2004-08-15

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

  15. Interaction of GaN epitaxial layers with atomic hydrogen

    International Nuclear Information System (INIS)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

    2004-01-01

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

  16. In situ synthesis and characterization of GaN nanorods through thermal decomposition of pre-grown GaN films

    International Nuclear Information System (INIS)

    Yan, P; Qin, D; An, Y K; Li, G Z; Xing, J; Liu, J J

    2008-01-01

    Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 deg. C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications

  17. Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

    International Nuclear Information System (INIS)

    Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

    2015-01-01

    Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

    Science.gov (United States)

    Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

    2018-05-01

    N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

  19. Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

    International Nuclear Information System (INIS)

    Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

    2013-01-01

    Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

  20. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor

    International Nuclear Information System (INIS)

    Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

    2015-01-01

    In this study, we performed growth of GaN layers using Ga 2 O vapor synthesized from Ga and H 2 O vapor. In this process, we employed H 2 O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. In the synthesis reaction of Ga 2 O, a Ga 2 O 3 whisker formed and covered Ga, which impeded the synthesis reaction of Ga 2 O. The formation of the Ga 2 O 3 whisker was suppressed in H 2 ambient at high temperatures. Then, we adopted this process to supply a group III precursor and obtained an epitaxial layer. X-ray diffraction (XRD) measurement revealed that the epitaxial layer was single-crystalline GaN. Growth rate increased linearly with Ga 2 O partial pressure and reached 104 µm/h. (author)

  1. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-01-01

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr 4 beam equivalent pressure of 1.86 × 10 −7 mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics

  2. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I. [NOVITAS-Nanoelectronics, Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  3. The occurrence of in-mouth coalescence of emulsion droplets in relation to perception of fat

    NARCIS (Netherlands)

    Dresselhuis, D.M.; Hoog, de E.H.A.; Cohen Stuart, M.A.; Vingerhoeds, M.H.; Aken, van G.A.

    2008-01-01

    We studied the relation between sensitivity of emulsions for in-mouth coalescence and perception of fat-related attributes, such as creaminess as well as the relation with in vivo perceived and ex vivo measured friction. Emulsions with varying expected sensitivity towards in-mouth coalescence were

  4. Coalescence kinetics of oil-in-water emulsions studied with microfluidics

    NARCIS (Netherlands)

    Krebs, T.; Schroen, C.G.P.H.; Boom, R.M.

    2013-01-01

    We report the results of experiments on the coalescence dynamics in flowing oil-in-water emulsions using an integrated microfluidic device. The microfluidic circuit permits direct observation of shear-induced collisions and coalescence events between emulsion droplets. Three mineral oils with a

  5. Coalescence aspects of cobalt nanoparticles during in situ high-temperature annealing

    NARCIS (Netherlands)

    Palasantzas, G; Vystavel, T; Koch, SA; De Hosson, JTM

    2006-01-01

    In this work we investigate the coalescence aspects of Co nanoparticles. It was observed that nanoparticles in contact with the substrate are relatively immobile, whereas those on top of other Co particles can rearrange themselves during high-temperature annealing and further coalesce. Indeed,

  6. UMA/GAN network architecture analysis

    Science.gov (United States)

    Yang, Liang; Li, Wensheng; Deng, Chunjian; Lv, Yi

    2009-07-01

    This paper is to critically analyze the architecture of UMA which is one of Fix Mobile Convergence (FMC) solutions, and also included by the third generation partnership project(3GPP). In UMA/GAN network architecture, UMA Network Controller (UNC) is the key equipment which connects with cellular core network and mobile station (MS). UMA network could be easily integrated into the existing cellular networks without influencing mobile core network, and could provides high-quality mobile services with preferentially priced indoor voice and data usage. This helps to improve subscriber's experience. On the other hand, UMA/GAN architecture helps to integrate other radio technique into cellular network which includes WiFi, Bluetooth, and WiMax and so on. This offers the traditional mobile operators an opportunity to integrate WiMax technique into cellular network. In the end of this article, we also give an analysis of potential influence on the cellular core networks ,which is pulled by UMA network.

  7. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  8. Gene tree rooting methods give distributions that mimic the coalescent process.

    Science.gov (United States)

    Tian, Yuan; Kubatko, Laura S

    2014-01-01

    Multi-locus phylogenetic inference is commonly carried out via models that incorporate the coalescent process to model the possibility that incomplete lineage sorting leads to incongruence between gene trees and the species tree. An interesting question that arises in this context is whether data "fit" the coalescent model. Previous work (Rosenfeld et al., 2012) has suggested that rooting of gene trees may account for variation in empirical data that has been previously attributed to the coalescent process. We examine this possibility using simulated data. We show that, in the case of four taxa, the distribution of gene trees observed from rooting estimated gene trees with either the molecular clock or with outgroup rooting can be closely matched by the distribution predicted by the coalescent model with specific choices of species tree branch lengths. We apply commonly-used coalescent-based methods of species tree inference to assess their performance in these situations. Copyright © 2013 Elsevier Inc. All rights reserved.

  9. Application of parametric equations of motion to study the resonance coalescence in H2(+).

    Science.gov (United States)

    Kalita, Dhruba J; Gupta, Ashish K

    2012-12-07

    Recently, occurrence of coalescence point was reported in H(2)(+) undergoing multiphoton dissociation in strong laser field. We have applied parametric equations of motion and smooth exterior scaling method to study the coalescence phenomenon of H(2)(+). The advantage of this method is that one can easily trace the different states that are changing as the field parameters change. It was reported earlier that in the parameter space, only two bound states coalesce [R. Lefebvre, O. Atabek, M. Sindelka, and N. Moiseyev, Phys. Rev. Lett. 103, 123003 (2009)]. However, it is found that increasing the accuracy of the calculation leads to the coalescence between resonance states originating from the bound and the continuum states. We have also reported many other coalescence points.

  10. Asymptotic distributions of coalescence times and ancestral lineage numbers for populations with temporally varying size.

    Science.gov (United States)

    Chen, Hua; Chen, Kun

    2013-07-01

    The distributions of coalescence times and ancestral lineage numbers play an essential role in coalescent modeling and ancestral inference. Both exact distributions of coalescence times and ancestral lineage numbers are expressed as the sum of alternating series, and the terms in the series become numerically intractable for large samples. More computationally attractive are their asymptotic distributions, which were derived in Griffiths (1984) for populations with constant size. In this article, we derive the asymptotic distributions of coalescence times and ancestral lineage numbers for populations with temporally varying size. For a sample of size n, denote by Tm the mth coalescent time, when m + 1 lineages coalesce into m lineages, and An(t) the number of ancestral lineages at time t back from the current generation. Similar to the results in Griffiths (1984), the number of ancestral lineages, An(t), and the coalescence times, Tm, are asymptotically normal, with the mean and variance of these distributions depending on the population size function, N(t). At the very early stage of the coalescent, when t → 0, the number of coalesced lineages n - An(t) follows a Poisson distribution, and as m → n, $$n\\left(n-1\\right){T}_{m}/2N\\left(0\\right)$$ follows a gamma distribution. We demonstrate the accuracy of the asymptotic approximations by comparing to both exact distributions and coalescent simulations. Several applications of the theoretical results are also shown: deriving statistics related to the properties of gene genealogies, such as the time to the most recent common ancestor (TMRCA) and the total branch length (TBL) of the genealogy, and deriving the allele frequency spectrum for large genealogies. With the advent of genomic-level sequencing data for large samples, the asymptotic distributions are expected to have wide applications in theoretical and methodological development for population genetic inference.

  11. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    OpenAIRE

    Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

    2011-01-01

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

  12. Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Hoffmann, Veit; Netzel, Carsten; Knauer, Arne; Weyers, Markus [FBH, Berlin (Germany); Ploch, Simon; Rass, Jens [Institute of Solid State Physics, TU Berlin (Germany); Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2010-07-01

    Recently a number of groups have reported laser diodes in the green spectral range on semi- and nonpolar GaN. Nevertheless the growth process on semipolar surfaces is not well understood. In this study 3.5 {mu} m thick MOVPE grown GaN layers on bulk m-plane, (11 anti 22), (10 anti 12), and (10 anti 11) GaN substrates were investigated. XRD rocking curves exhibit a FWHM of less than 150{sup ''}, indicating excellent crystalline quality. But the surface morphology exhibits hillocks with a height of 1 {mu}m and lateral extension of 150 {mu}m in many cases. Depending on the substrate orientation and the growth temperature different hillock shapes were observed. Morphology and luminescence data point to threading dislocations as formation sources. In QWs the hillock structure is reproduced in the emission intensity and wavelength distribution on (10 anti 11) but not on the m-plane surfaces. The hillocks could be eliminated for the semipolar planes (not for the m-plane) by increasing the reactor pressure and lowering the growth temperature. Hillock free separate confinement laser structures emitting at 405 nm feature a very homogeneous luminescence in micro-PL and show amplified spontaneous emission under high power stripe excitation. Furthermore the In incorporation was found to be highest in QWs on (10 anti 11).

  13. Application of Generative Adversarial Networks (GANs) to jet images

    CERN Multimedia

    CERN. Geneva

    2017-01-01

    https://arxiv.org/abs/1701.05927 We provide a bridge between generative modeling in the Machine Learning community and simulated physical processes in High Energy Particle Physics by applying a novel Generative Adversarial Network (GAN) architecture to the production of jet images -- 2D representations of energy depositions from particles interacting with a calorimeter. We propose a simple architecture, the Location-Aware Generative Adversarial Network, that learns to produce realistic radiation patterns from simulated high energy particle collisions. The pixel intensities of GAN-generated images faithfully span over many orders of magnitude and exhibit the desired low-dimensional physical properties (i.e., jet mass, n-subjettiness, etc.). We shed light on limitations, and provide a novel empirical validation of image quality and validity of GAN-produced simulations of the natural world. This work provides a base for further explorations of GANs for use in faster simulation in High Energy Particle Physics.

  14. Mn doped GaN thin films and nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

    2012-01-01

    Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  15. Tidal interaction and coalescence of close binary white dwarfs

    International Nuclear Information System (INIS)

    Webbink, R.F.; Iben, I. Jr.

    1987-01-01

    The physical processes which govern the interaction and final coalescence of close binary white dwarfs are examined. During the approach to mass transfer, the rate of accumulation of rotational energy by a white dwarf can exceed 10 to the 37th erg/s, raising the possibility that the initial phases of mass transfer are strongly influenced by tidal heating of the donor star. The potential energy released by accretion is incapable of removing more than a minor fraction of this material from the system, and numerical simulations show that the accreted envelope engulfs the donor star, leading to formation of common envelope binary before carbon can be ignited at the base of the accreted envelope. Unless shocks can lift the degeneracy of the donor core, a core mass exceeding the Chandrasekhar limit can be created, leading directly to core collapse and a supernova explosion, regardless of whether or not carbon is ignited in the nondegenerate envelope. It is plausible that most of the mass of the donor white dwarf is assimilated in a degenerate state by the accretor. 32 references

  16. Inferring the dynamics of diversification: a coalescent approach.

    Science.gov (United States)

    Morlon, Hélène; Potts, Matthew D; Plotkin, Joshua B

    2010-09-28

    Recent analyses of the fossil record and molecular phylogenies suggest that there are fundamental limits to biodiversity, possibly arising from constraints in the availability of space, resources, or ecological niches. Under this hypothesis, speciation rates decay over time and biodiversity eventually saturates, with new species emerging only when others are driven to extinction. This view of macro-evolution contradicts an alternative hypothesis that biodiversity is unbounded, with species ever accumulating as they find new niches to occupy. These contrasting theories of biodiversity dynamics yield fundamentally different explanations for the disparity in species richness across taxa and regions. Here, we test whether speciation rates have decayed or remained constant over time, and whether biodiversity is saturated or still expanding. We first derive a general likelihood expression for internode distances in a phylogeny, based on the well-known coalescent process from population genetics. This expression accounts for either time-constant or time-variable rates, time-constant or time-variable diversity, and completely or incompletely sampled phylogenies. We then compare the performance of different diversification scenarios in explaining a set of 289 phylogenies representing amphibians, arthropods, birds, mammals, mollusks, and flowering plants. Our results indicate that speciation rates typically decay over time, but that diversity is still expanding at present. The evidence for expanding-diversity models suggests that an upper limit to biodiversity has not yet been reached, or that no such limit exists.

  17. Drop coalescence and liquid flow in a single Plateau border

    Science.gov (United States)

    Cohen, Alexandre; Fraysse, Nathalie; Raufaste, Christophe

    2015-05-01

    We report a comprehensive study of the flow of liquid triggered by injecting a droplet into a liquid foam microchannel, also called a Plateau border. This drop-injected experiment reveals an intricate dynamics for the liquid redistribution, with two contrasting regimes observed, ruled either by inertia or viscosity. We devoted a previous study [A. Cohen et al., Phys. Rev. Lett. 112, 218303 (2014), 10.1103/PhysRevLett.112.218303] to the inertial imbibition regime, unexpected at such small length scales. Here we report other features of interest of the drop-injected experiment, related to the coalescence of the droplet with the liquid microchannel, to both the inertial and viscous regimes, and to the occurrence of liquid flow through the soap films as well as effects of the interfacial rheology. The transition between the two regimes is investigated and qualitatively accounted for. The relevance of our results to liquid foam drainage is tackled by considering the flow of liquid at the nodes of the network of interconnected microchannels. Extensions of our study to liquid foams are discussed.

  18. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    Energy Technology Data Exchange (ETDEWEB)

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

  19. Synthesis of p-type GaN nanowires.

    Science.gov (United States)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-09-21

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

  20. Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.

    Science.gov (United States)

    Hetzl, Martin; Kraut, Max; Hoffmann, Theresa; Stutzmann, Martin

    2017-06-14

    Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

  1. CoaSim: A Flexible Environment for Simulating Genetic Data under Coalescent Models

    DEFF Research Database (Denmark)

    Mailund; Schierup, Mikkel Heide; Pedersen, Christian Nørgaard Storm

    2005-01-01

    get insight into these. Results We have created the CoaSim application as a flexible environment for Monte various types of genetic data under equilibrium and non-equilibrium coalescent variety of applications. Interaction with the tool is through the Guile version scripting language. Scheme scripts......Background Coalescent simulations are playing a large role in interpreting large scale intra- polymorphism surveys and for planning and evaluating association studies. Coalescent of data sets under different models can be compared to the actual data to test different evolutionary factors and thus...

  2. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Kehagias, Th.; Komninou, Ph.; Georgakilas, A.

    2005-01-01

    The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 and 520 deg. C. The number of monolayers of initial two-dimensional growth, in the case of Stranski-Krastanov mode, varies monotonically with substrate temperature, from 2 ML at 400 deg. C to about 12 ML at 500 deg. C. The evolution and coalescence of nucleated islands were also investigated as a function of substrate temperature. It was found that at higher temperature their coalescence is inhibited leading to porous-columnar InN thin films, which exhibit growth rates higher than the nominal value. Therefore, in order to achieve continuous InN layers on GaN (0001) a two-step growth approach is introduced. In that approach, InN is nucleated at low temperatures on GaN and the growth continues until full coalescence of the nucleated islands. Subsequently, this nucleation layer is overgrown at higher substrate temperature in order to achieve high-quality continuous films. The InN films grown by the two-step method were investigated by x-ray diffraction, Hall-effect measurements, and

  3. Cluster Dynamics Modeling with Bubble Nucleation, Growth and Coalescence

    Energy Technology Data Exchange (ETDEWEB)

    de Almeida, Valmor F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Blondel, Sophie [Univ. of Tennessee, Knoxville, TN (United States); Bernholdt, David E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Wirth, Brian D. [Univ. of Tennessee, Knoxville, TN (United States)

    2017-06-01

    The topic of this communication pertains to defect formation in irradiated solids such as plasma-facing tungsten submitted to helium implantation in fusion reactor com- ponents, and nuclear fuel (metal and oxides) submitted to volatile ssion product generation in nuclear reactors. The purpose of this progress report is to describe ef- forts towards addressing the prediction of long-time evolution of defects via continuum cluster dynamics simulation. The di culties are twofold. First, realistic, long-time dynamics in reactor conditions leads to a non-dilute di usion regime which is not accommodated by the prevailing dilute, stressless cluster dynamics theory. Second, long-time dynamics calls for a large set of species (ideally an in nite set) to capture all possible emerging defects, and this represents a computational bottleneck. Extensions beyond the dilute limit is a signi cant undertaking since no model has been advanced to extend cluster dynamics to non-dilute, deformable conditions. Here our proposed approach to model the non-dilute limit is to monitor the appearance of a spatially localized void volume fraction in the solid matrix with a bell shape pro le and insert an explicit geometrical bubble onto the support of the bell function. The newly cre- ated internal moving boundary provides the means to account for the interfacial ux of mobile species into the bubble, and the growth of bubbles allows for coalescence phenomena which captures highly non-dilute interactions. We present a preliminary interfacial kinematic model with associated interfacial di usion transport to follow the evolution of the bubble in any number of spatial dimensions and any number of bubbles, which can be further extended to include a deformation theory. Finally we comment on a computational front-tracking method to be used in conjunction with conventional cluster dynamics simulations in the non-dilute model proposed.

  4. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  5. Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles.

    Science.gov (United States)

    Braniste, Tudor; Tiginyanu, Ion; Horvath, Tibor; Raevschi, Simion; Cebotari, Serghei; Lux, Marco; Haverich, Axel; Hilfiker, Andres

    2016-01-01

    Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle-cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN) semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated. The effect of free GaN nanoparticles versus the effect of growing endothelial cells on GaN functionalized surfaces was examined. To functionalize surfaces with GaN, GaN nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO) nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial cells grown on surfaces functionalized with GaN nanoparticles demonstrated excellent adhesion and proliferation, suggesting good biocompatibility of the nanostructured GaN.

  6. Partial Cancellation

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. Partial Cancellation. Full Cancellation is desirable. But complexity requirements are enormous. 4000 tones, 100 Users billions of flops !!! Main Idea: Challenge: To determine which cross-talker to cancel on what “tone” for a given victim. Constraint: Total complexity is ...

  7. Addendum to 'Half coalescence of the m=1, n=1 magnetic island in tokamaks'

    International Nuclear Information System (INIS)

    Bussac, M.N.; Pellat, R.

    1985-01-01

    As an addendum to our previous work concerning the half-coalescence instability of an m=1, n=1 magnetic island in tokamaks, the potential energy is given for an arbitrary shape of the separatrix. (orig.)

  8. Coalescence and the initial stage of formation of nanofibers by the 'vapor-liquid-solid' scheme

    International Nuclear Information System (INIS)

    Zhdanok, S.A.; Martynenko, V.V.; Fisenko, S.P.; Shabunya, S.I.

    2010-01-01

    It has been shown that the diffusion interaction of growing impurity clusters within catalytic nanodroplets determines the important geometric parameters of a nanofiber. The characteristic time of coalescence of the clusters has been found. (authors)

  9. Experimental visualization coalesced interaction of sliding bubble near wall in vertical narrow rectangular channel

    International Nuclear Information System (INIS)

    Xu Jianjun; Chen Bingde; Wang Xiaojun

    2011-01-01

    The characteristic of the coalesced sliding bubble was visually observed by wide side and narrow side of the narrow rectangular channel using high speed digital camera. The results show that the coalesced time among the sliding bubbles is quick, and the new formation of coalesced bubble is not lift-off, and it continues to slide along the heated surface in low heat flux for the isolated bubble region. The influence region is about 2 times projected area of the sliding bubble when the sliding bubbles begin to interact. The sliding bubble velocities increase duo to the interaction among the bubbles, which contributes to enhance heat transfer of this region. Finally, the effect of coalesced interaction of growing bubble in the nucleation sites on bubble lift-off was discussed and analysed. (authors)

  10. High surface hole concentration p-type GaN using Mg implantation

    International Nuclear Information System (INIS)

    Long Tao; Yang Zhijian; Zhang Guoyi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  11. StackGAN++: Realistic Image Synthesis with Stacked Generative Adversarial Networks

    OpenAIRE

    Zhang, Han; Xu, Tao; Li, Hongsheng; Zhang, Shaoting; Wang, Xiaogang; Huang, Xiaolei; Metaxas, Dimitris

    2017-01-01

    Although Generative Adversarial Networks (GANs) have shown remarkable success in various tasks, they still face challenges in generating high quality images. In this paper, we propose Stacked Generative Adversarial Networks (StackGAN) aiming at generating high-resolution photo-realistic images. First, we propose a two-stage generative adversarial network architecture, StackGAN-v1, for text-to-image synthesis. The Stage-I GAN sketches the primitive shape and colors of the object based on given...

  12. Role of microtexture in the interaction and coalescence of hydrogen-induced cracks

    Energy Technology Data Exchange (ETDEWEB)

    Venegas, V. [Departamento de Ingenieria Metalurgica, IPN-ESIQIE, UPALM Edif. 7, Zacatenco, Mexico D.F. 07738 (Mexico); Caleyo, F. [Departamento de Ingenieria Metalurgica, IPN-ESIQIE, UPALM Edif. 7, Zacatenco, Mexico D.F. 07738 (Mexico)], E-mail: fcaleyo@gmail.com; Baudin, T. [Laboratoire de Physico-Chimie de l' Etat Solide, ICMMO, UMR CNRS 8182, Batiment 410, Universite de Paris Sud, 91405, Orsay, Cedex (France); Hallen, J.M. [Departamento de Ingenieria Metalurgica, IPN-ESIQIE, UPALM Edif. 7, Zacatenco, Mexico D.F. 07738 (Mexico); Penelle, R. [Laboratoire de Physico-Chimie de l' Etat Solide, ICMMO, UMR CNRS 8182, Batiment 410, Universite de Paris Sud, 91405, Orsay, Cedex (France)

    2009-05-15

    The role of microtexture in hydrogen-induced crack interaction and coalescence is investigated in line pipe steels using electron backscatter diffraction. Experimental evidence shows that, depending on the local grain orientation, crack interaction and coalescence can depart from the conditions predicted by the mixed-mode fracture mechanics of isotropic linear elastic materials. Stress simulation and microtexture analysis are used to explain the experimental observations.

  13. Coalescence of two equal cylinders: exact results for creeping viscous plane flow driven by capillarity

    International Nuclear Information System (INIS)

    Hopper, R.W.

    1984-01-01

    The coalescence of two equal viscous cylinders under the influence of capillarity is of interest in the theory of sintering. Although the flow in typical cylinder coalescence experiments is not planar, the plane-flow case is of general interest and is a good approximation in the early stage. An essentially exact analytic solution giving the shape as a function of time for slow plane flow is presented in simple closed form. 16 references, 2 figures, 1 table

  14. Impact of 50% Synthesized Iso-Paraffins (SIP) on Middle Distillate Fuel Filtration and Coalescence

    Science.gov (United States)

    2014-10-30

    Paraffins DEFINITIONS Coalescence - the ability to shed water Conventional Material Source - crude oil , natural gas liquid condensates...Impact of 50% Synthesized Iso-Paraffins (SIP) on Middle Distillate Fuel Filtration and Coalescence NF&LCFT REPORT 441/15-003 30 October 2014...heavy oil , shale oil , and oil sands Effluent - stream leaving a system Influent - stream entering a system Turnover - time required to flow the

  15. Role of microtexture in the interaction and coalescence of hydrogen-induced cracks

    International Nuclear Information System (INIS)

    Venegas, V.; Caleyo, F.; Baudin, T.; Hallen, J.M.; Penelle, R.

    2009-01-01

    The role of microtexture in hydrogen-induced crack interaction and coalescence is investigated in line pipe steels using electron backscatter diffraction. Experimental evidence shows that, depending on the local grain orientation, crack interaction and coalescence can depart from the conditions predicted by the mixed-mode fracture mechanics of isotropic linear elastic materials. Stress simulation and microtexture analysis are used to explain the experimental observations.

  16. Gravitational Waves from Coalescing Binary Black Holes: Theoretical and Experimental Challenges

    CERN Multimedia

    CERN. Geneva

    2010-01-01

    (LIGO/VIRGO/GEO/...) is currently taking data near its planned sensitivity. Coalescing black hole binaries are among the most promising, and most exciting, gravitational wave sources for these detectors. The talk will review the theoretical and experimental challenges that must be met in order to successfully detect gravitational waves from coalescing black hole binaries, and to be able to reliably measure the physical parameters of the source (masses, spins, ...).

  17. Visualization by X-ray tomography of void growth and coalescence leading to fracture in model materials

    International Nuclear Information System (INIS)

    Weck, A.; Wilkinson, D.S.; Maire, E.; Toda, H.

    2008-01-01

    The literature contains many models for the process of void nucleation, growth and coalescence leading to ductile fracture. However, these models lack in-depth experimental validation, in part because void coalescence is difficult to capture experimentally. In this paper, an embedded array of holes is obtained by diffusion bonding a sheet filled with laser-drilled holes between two intact sheets. The experiments have been performed with both pure copper and Glidcop. Using X-ray computed tomography, we show that void growth and coalescence (or linkage) are well captured in both materials. The Brown and Embury model for void coalescence underestimates coalescence strains due to constraining effects. However, both the Rice and Tracey model for void growth and the Thomason model for void coalescence give good predictions for copper samples when stress triaxiality is considered. The Thomason model, however, fails to predict coalescence for the Glidcop samples; this is primarily due to secondary void nucleation

  18. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ng, Tien Khee; Ooi, Boon S.

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation

  19. Dynamic measurements and simulations of airborne picolitre-droplet coalescence in holographic optical tweezers

    International Nuclear Information System (INIS)

    Bzdek, Bryan R.; Reid, Jonathan P.; Collard, Liam; Sprittles, James E.; Hudson, Andrew J.

    2016-01-01

    We report studies of the coalescence of pairs of picolitre aerosol droplets manipulated with holographic optical tweezers, probing the shape relaxation dynamics following coalescence by simultaneously monitoring the intensity of elastic backscattered light (EBL) from the trapping laser beam (time resolution on the order of 100 ns) while recording high frame rate camera images (time resolution <10 μs). The goals of this work are to: resolve the dynamics of droplet coalescence in holographic optical traps; assign the origin of key features in the time-dependent EBL intensity; and validate the use of the EBL alone to precisely determine droplet surface tension and viscosity. For low viscosity droplets, two sequential processes are evident: binary coalescence first results from the overlap of the optical traps on the time scale of microseconds followed by the recapture of the composite droplet in an optical trap on the time scale of milliseconds. As droplet viscosity increases, the relaxation in droplet shape eventually occurs on the same time scale as recapture, resulting in a convoluted evolution of the EBL intensity that inhibits quantitative determination of the relaxation time scale. Droplet coalescence was simulated using a computational framework to validate both experimental approaches. The results indicate that time-dependent monitoring of droplet shape from the EBL intensity allows for robust determination of properties such as surface tension and viscosity. Finally, the potential of high frame rate imaging to examine the coalescence of dissimilar viscosity droplets is discussed.

  20. Dynamic measurements and simulations of airborne picolitre-droplet coalescence in holographic optical tweezers

    Energy Technology Data Exchange (ETDEWEB)

    Bzdek, Bryan R.; Reid, Jonathan P., E-mail: j.p.reid@bristol.ac.uk [School of Chemistry, University of Bristol, Bristol BS8 1TS (United Kingdom); Collard, Liam [Department of Mathematics, University of Leicester, Leicester LE1 7RH (United Kingdom); Sprittles, James E. [Mathematics Institute, University of Warwick, Coventry CV4 7AL (United Kingdom); Hudson, Andrew J. [Department of Chemistry, University of Leicester, Leicester LE1 7RH (United Kingdom)

    2016-08-07

    We report studies of the coalescence of pairs of picolitre aerosol droplets manipulated with holographic optical tweezers, probing the shape relaxation dynamics following coalescence by simultaneously monitoring the intensity of elastic backscattered light (EBL) from the trapping laser beam (time resolution on the order of 100 ns) while recording high frame rate camera images (time resolution <10 μs). The goals of this work are to: resolve the dynamics of droplet coalescence in holographic optical traps; assign the origin of key features in the time-dependent EBL intensity; and validate the use of the EBL alone to precisely determine droplet surface tension and viscosity. For low viscosity droplets, two sequential processes are evident: binary coalescence first results from the overlap of the optical traps on the time scale of microseconds followed by the recapture of the composite droplet in an optical trap on the time scale of milliseconds. As droplet viscosity increases, the relaxation in droplet shape eventually occurs on the same time scale as recapture, resulting in a convoluted evolution of the EBL intensity that inhibits quantitative determination of the relaxation time scale. Droplet coalescence was simulated using a computational framework to validate both experimental approaches. The results indicate that time-dependent monitoring of droplet shape from the EBL intensity allows for robust determination of properties such as surface tension and viscosity. Finally, the potential of high frame rate imaging to examine the coalescence of dissimilar viscosity droplets is discussed.

  1. Characterization of solids deposited on the modular caustic-side solvent extraction unit (MCU) coalescer media removed in October 2014

    Energy Technology Data Exchange (ETDEWEB)

    Fondeur, F. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2016-03-01

    In February 2015, Savannah River National Laboratory (SRNL) received a Strip Effluent (SE) coalescer (FLT-304) from MCU. That coalescer was first installed at MCU in July 2014 and removed in October 2014. While processing approximately 31,400 gallons of strip solution, the pressure drop steadily increased from 1 psi to beyond the administrative limit of 20 psi. The physical and chemical analysis was conducted on this coalescer to determine the mechanism that led to the plugging of this coalescer. Characterization of this coalescer revealed the adsorption of organic containing amines as well as MCU modifier. The amines are probably from the decomposition of the suppressor (TiDG) as well as from bacteria. This adsorption may have changed the surface energetics (characteristics) of the coalescer fibers and therefore, their wetting behavior. A very small amount of inorganic solids were found to have deposited on this coalescer (possibly an artifact of cleaning the coalescer with Boric acid. However, we believe that inorganic precipitation, as has been seen in the past, did not play a role in the high pressure drop rise of this coalescer. With regards to the current practice of reducing the radioactive content of the SE coalescer, it is recommended that future SE coalescer should be flushed with 10 mM boric acid which is currently used at MCU. Plugging of the SE coalescer was most likely due to the formation and accumulation of a water-in-oil emulsion that reduced the overall porosity of the coalescer. There is also evidence that a bimodal oil particle distribution may have entered and deposited in the coalescer and caused the initial increase in pressure drop.

  2. Microscopic investigations of the optical and structural properties of nonpolar InGaN MQWs on a-plane GaN ELOG structures

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, Torsten; Bastek, Barbara; Hempel, Thomas; Veit, Peter; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Wernicke, Tim; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University Berlin (Germany)

    2010-07-01

    We present the optical and structural properties of InGaN MQWs which were grown by MOVPE on fully coalesced lateral epitaxially overgrown (ELOG) a-plane GaN on r-plane sapphire substrate and stripe masks orientated in the [0110] direction. Photoluminescence (PL) measurements exhibit a strong emission from the InGaN MQW at 3.109 eV at 4 K dominating the GaN (D{sup 0},X) emission at 3.488 eV by two orders of magnitude. The emission from basal plane stacking faults (BSF) was even more suppressed. Transmission electron microscopy showed a drastic reduction of the BSF in the lateral overgrown area (I) compared to the area of coherent growth (II). {mu}-PL and highly spatially resolved cathodoluminescence (CL) measurements revealed an intensity increase of the MQW emission by a factor of two for the defect reduced region (I) compared to the defective region (II). Also a blue shift by 20 meV of the MQW peak emission wavelength in the area (I) in comparison with defective area (II) was observed.

  3. Partial processing

    International Nuclear Information System (INIS)

    1978-11-01

    This discussion paper considers the possibility of applying to the recycle of plutonium in thermal reactors a particular method of partial processing based on the PUREX process but named CIVEX to emphasise the differences. The CIVEX process is based primarily on the retention of short-lived fission products. The paper suggests: (1) the recycle of fission products with uranium and plutonium in thermal reactor fuel would be technically feasible; (2) it would, however, take ten years or more to develop the CIVEX process to the point where it could be launched on a commercial scale; (3) since the majority of spent fuel to be reprocessed this century will have been in storage for ten years or more, the recycling of short-lived fission products with the U-Pu would not provide an effective means of making refabrication fuel ''inaccessible'' because the radioactivity associated with the fission products would have decayed. There would therefore be no advantage in partial processing

  4. Partial gigantism

    Directory of Open Access Journals (Sweden)

    М.М. Karimova

    2017-05-01

    Full Text Available A girl with partial gigantism (the increased I and II fingers of the left foot is being examined. This condition is a rare and unresolved problem, as the definite reason of its development is not determined. Wait-and-see strategy is recommended, as well as correcting operations after closing of growth zones, and forming of data pool for generalization and development of schemes of drug and radial therapeutic methods.

  5. Energetics and phasing of nonprecessing spinning coalescing black hole binaries

    Science.gov (United States)

    Nagar, Alessandro; Damour, Thibault; Reisswig, Christian; Pollney, Denis

    2016-02-01

    We present an improved numerical relativity (NR) calibration of the new effective-one-body (EOB) model for coalescing nonprecessing spinning black hole binaries recently introduced by Damour and Nagar [Phys. Rev. D 90, 044018 (2014), 10.1103/PhysRevD.90.044018]. We do so by comparing the EOB predictions to both the phasing and the energetics provided by two independent sets of NR data covering mass ratios 1 ≤q ≤9.989 and dimensionless spin range -0.95 ≤χ ≤+0.994 . One set of data is a subset of the Simulating eXtreme Spacetimes (SXS) catalog of public waveforms; the other set consists of new simulations obtained with the Llama code plus Cauchy characteristic evolution. We present the first systematic computation of the gauge-invariant relation between the binding energy and the total angular momentum, Eb(j ), for a large sample of, spin-aligned, SXS and Llama data. The dynamics of the EOB model presented here involves only two free functional parameters, one [a6c(ν )] entering the nonspinning sector, as a 5PN effective correction to the interaction potential, and one [c3(a˜1,a˜2,ν )] in the spinning sector, as an effective next-to-next-to-next-to-leading order correction to the spin-orbit coupling. These parameters are determined [together with a third functional parameter Δ tNQC(χ ) entering the waveform] by comparing the EOB phasing with the SXS phasing, the consistency of the energetics being checked afterwards. The quality of the analytical model for gravitational wave data analysis purposes is assessed by computing the EOB/NR faithfulness. Over the NR data sample and when varying the total mass between 20 and 200 M⊙ the EOB/NR unfaithfulness (integrated over the NR frequency range) is found to vary between 99.493% and 99.984% with a median value of 99.944%.

  6. Epitaxial GaN around ZnO nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

    2011-07-01

    We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

  7. The 2018 GaN power electronics roadmap

    Science.gov (United States)

    Amano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; Merlyne De Souza, Maria; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Boon Lee, Kean; Li, Xu; Marcon, Denis; März, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomás; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao

    2018-04-01

    Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

  8. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  9. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

    Science.gov (United States)

    Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

    2017-04-20

    Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

  10. Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Ploch, Simon [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hoffmann, Veit; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2011-03-15

    GaN layers on bulk m-plane, (11 anti 22), (10 anti 12) and (10 anti 11) GaN substrates were grown by metal organic vapor phase epitaxy. XRD rocking curves have a FWHM of less than 150'', indicating excellent crystalline quality. However in many cases surface morphology exhibits hillocks with a height of 1-2 {mu}m and a lateral extension of 50-200 {mu}m whereas a smooth surface would be desirable for optoelectronic devices. The influence of growth parameters on the surface morphology was studied. The goal was, to constrain the material redistribution, that is necessary to form large hillocks. This was achieved by lowering the adatom diffusion length by a reduction of temperature and an increased reactor pressure. In the case of the (10 anti 11) and (10 anti 12) semipolar planes a reduction of the adatom diffusion length leads to a reduction of hillock density, hillock size and a smoother surface between hillocks. However, the m-plane surface does not react to a reduction of adatom mobility. Even at 890 C and 400 mbar rectangular pyramids cover the surface. In contrast to the other planes, the (11 anti 22) becomes instable, when the adatom diffusion length is reduced. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  12. Optical investigation of strain in Si-doped GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Paramo, J.; Calleja, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

    2001-06-25

    The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E{sub 2} mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5{times}10{sup 18}cm{sup {minus}3} both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. {copyright} 2001 American Institute of Physics.

  13. Optical investigation of strain in Si-doped GaN films

    International Nuclear Information System (INIS)

    Sanchez-Paramo, J.; Calleja, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

    2001-01-01

    The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E 2 mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5x10 18 cm -3 both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. [copyright] 2001 American Institute of Physics

  14. Ion implantation of Cd and Ag into AlN and GaN

    CERN Document Server

    Miranda, Sérgio M C; Correia, João Guilherme; Vianden, Reiner; Johnston, Karl; Alves, Eduardo; Lorenz, Katharina

    2012-01-01

    GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/ channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined.

  15. Transient atomic behavior and surface kinetics of GaN

    International Nuclear Information System (INIS)

    Moseley, Michael; Billingsley, Daniel; Henderson, Walter; Trybus, Elaissa; Doolittle, W. Alan

    2009-01-01

    An in-depth model for the transient behavior of metal atoms adsorbed on the surface of GaN is developed. This model is developed by qualitatively analyzing transient reflection high energy electron diffraction (RHEED) signals, which were recorded for a variety of growth conditions of GaN grown by molecular-beam epitaxy (MBE) using metal-modulated epitaxy (MME). Details such as the initial desorption of a nitrogen adlayer and the formation of the Ga monolayer, bilayer, and droplets are monitored using RHEED and related to Ga flux and shutter cycles. The suggested model increases the understanding of the surface kinetics of GaN, provides an indirect method of monitoring the kinetic evolution of these surfaces, and introduces a novel method of in situ growth rate determination.

  16. Transient atomic behavior and surface kinetics of GaN

    Science.gov (United States)

    Moseley, Michael; Billingsley, Daniel; Henderson, Walter; Trybus, Elaissa; Doolittle, W. Alan

    2009-07-01

    An in-depth model for the transient behavior of metal atoms adsorbed on the surface of GaN is developed. This model is developed by qualitatively analyzing transient reflection high energy electron diffraction (RHEED) signals, which were recorded for a variety of growth conditions of GaN grown by molecular-beam epitaxy (MBE) using metal-modulated epitaxy (MME). Details such as the initial desorption of a nitrogen adlayer and the formation of the Ga monolayer, bilayer, and droplets are monitored using RHEED and related to Ga flux and shutter cycles. The suggested model increases the understanding of the surface kinetics of GaN, provides an indirect method of monitoring the kinetic evolution of these surfaces, and introduces a novel method of in situ growth rate determination.

  17. Optical and Structural Characterizations of GaN Nano structures

    International Nuclear Information System (INIS)

    Shekari, L.; Abu Hassan, H.; Thahab, S.M.

    2011-01-01

    We have grown wurtzite GaN nano wires (NWs) on polished silicon (Si) either with or without Au as catalyst, using commercial GaN powder by thermal evaporation in an atmosphere of argon (Ar) gas. Structural and optical characterizations were performed using high resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), photoluminescence (PL) and energy-dispersive X-ray spectroscopy (EDX) spectroscopy. Results indicate that the nano wires are of single-crystal hexagonal GaN and the nano wires on Si with Au catalyst are more oriented than those without Au catalyst; and using catalyst make the NWs grow much faster and quite well-ordered. The compositional quality of the grown nano wires on the substrates are mostly same, however the nano wires on the Au coated silicon are of low density, while the nano wires on the Si are of high density. (author)

  18. High-Sensitivity GaN Microchemical Sensors

    Science.gov (United States)

    Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

    2009-01-01

    Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

  19. Benefits and Drawbacks of A High Frequency Gan Zvzcps Converter

    Directory of Open Access Journals (Sweden)

    Blanes J. M.

    2017-01-01

    Full Text Available This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS converter. This type of converters is usually used as Electronic Power Converters (EPC for telecommunication satellites travelling-wave tube amplifiers (TWTAs. In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.

  20. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    International Nuclear Information System (INIS)

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-01-01

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  1. Conductivity based on selective etch for GaN devices and applications thereof

    Science.gov (United States)

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  2. A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

    2016-10-01

    Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

  3. Dynamics of gas cell coalescence during baking expansion of leavened dough.

    Science.gov (United States)

    Miś, Antoni; Nawrocka, Agnieszka; Lamorski, Krzysztof; Dziki, Dariusz

    2018-01-01

    The investigation of the dynamics of gas cell coalescence, i.e. a phenomenon that deteriorates the homogeneity of the cellular structure of bread crumb, was carried out performing simultaneously measurements of the dough volume, pressure, and viscosity. It was demonstrated that, during the baking expansion of chemically leavened wheat flour dough, the maximum growth rate of the gas cell radius determined from the ratio of pressure exerted by the expanded dough to its viscosity was on average four-fold lower than that calculated from volume changes in the gas phase of the dough. Such a high discrepancy was interpreted as a result of the course of coalescence, and a formula for determination of its rate was developed. The coalescence rate in the initial baking expansion phase had negative values, indicating nucleation of newly formed gas cells, which increased the number of gas cells even by 8%. In the next baking expansion phase, the coalescence rate started to exhibit positive values, reflecting dominance of the coalescence phenomenon over nucleation. The maximum coalescence rates indicate that, during the period of the most intensive dough expansion, the number of gas cells decreased by 2-3% within one second. At the end of the formation of bread crumb, the number of the gas cells declined by 55-67% in comparison with the initial value. The correctness of the results was positively verified using X-ray micro-computed tomography. The developed method can be a useful tool for more profound exploration of the coalescence phenomenon at various stages of evolution of the cellular structure and its determinants, which may contribute to future development of more effective methods for improving the texture and sensory quality of bread crumb. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. Genes with minimal phylogenetic information are problematic for coalescent analyses when gene tree estimation is biased.

    Science.gov (United States)

    Xi, Zhenxiang; Liu, Liang; Davis, Charles C

    2015-11-01

    The development and application of coalescent methods are undergoing rapid changes. One little explored area that bears on the application of gene-tree-based coalescent methods to species tree estimation is gene informativeness. Here, we investigate the accuracy of these coalescent methods when genes have minimal phylogenetic information, including the implementation of the multilocus bootstrap approach. Using simulated DNA sequences, we demonstrate that genes with minimal phylogenetic information can produce unreliable gene trees (i.e., high error in gene tree estimation), which may in turn reduce the accuracy of species tree estimation using gene-tree-based coalescent methods. We demonstrate that this problem can be alleviated by sampling more genes, as is commonly done in large-scale phylogenomic analyses. This applies even when these genes are minimally informative. If gene tree estimation is biased, however, gene-tree-based coalescent analyses will produce inconsistent results, which cannot be remedied by increasing the number of genes. In this case, it is not the gene-tree-based coalescent methods that are flawed, but rather the input data (i.e., estimated gene trees). Along these lines, the commonly used program PhyML has a tendency to infer one particular bifurcating topology even though it is best represented as a polytomy. We additionally corroborate these findings by analyzing the 183-locus mammal data set assembled by McCormack et al. (2012) using ultra-conserved elements (UCEs) and flanking DNA. Lastly, we demonstrate that when employing the multilocus bootstrap approach on this 183-locus data set, there is no strong conflict between species trees estimated from concatenation and gene-tree-based coalescent analyses, as has been previously suggested by Gatesy and Springer (2014). Copyright © 2015 Elsevier Inc. All rights reserved.

  5. The influence of Fe doping on the surface topography of GaN epitaxial material

    International Nuclear Information System (INIS)

    Cui Lei; Yin Haibo; Jiang Lijuan; Wang Quan; Feng Chun; Xiao Hongling; Wang Cuimei; Wang Xiaoliang; Gong Jiamin; Zhang Bo; Li Baiquan; Wang Zhanguo

    2015-01-01

    Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 10 19 cm −3 . High resistivity GaN epitaxial material which is 1 × 10 9 Ω·cm is achieved. (paper)

  6. The origin of the residual conductivity of GaN films on ferroelectric materials

    Science.gov (United States)

    Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

    2009-08-01

    In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

  7. GaN epitaxial layers grown on multilayer graphene by MOCVD

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

    2018-04-01

    In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

  8. Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices

    Science.gov (United States)

    Berry Ann, N. J.; Rodak, L. E.; Kasarla, Kalyan; Yang, Nanying; Korakakis, D.

    2005-10-01

    In this research effort, epitaxial lateral overgrowth (ELOG) of GaN on sapphire was performed by low-pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor. All ELOG growths were stopped prior to complete coalescence, and the resulting cross-sections were characterized by scanning electron microscopy (SEM). Both vertical {1120} and inclined sidewalls were observed. Inclined {112n}sidewalls of various angles (n 2-2.2) were found as previously reported in the literature1. Both one-step and two-step ELOG processes were used to control the overgrowth geometry. It was confirmed that sidewall formation and growth rates are closely correlated with multiple parameters including temperature and V/III ratio1. It was also found that substrate rotation greatly influences sidewall evolution and vertical growth rate. A conceptual model was begun to completely describe the ELOG process in a horizontal reactor. It is speculated that the different sidewalls observed as a function of substrate orientation result from variation in the local V/III ratio. Once developed, the final model will be used to control the sidewalls in the growth of ELOG structures for the fabrication of novel optoelectronic devices.

  9. Direct observation of shear–induced nanocrystal attachment and coalescence in CuZr-based metallic glasses: TEM investigation

    International Nuclear Information System (INIS)

    Hajlaoui, K.; Alrasheedi, Nashmi H.; Yavari, A.R.

    2016-01-01

    In-situ tensile straining tests were performed in a transmission electron microscope (TEM) to analyse the deformation processes in CuZr-based metallic glasses and to directly observe the phase transformation occurrence. We report evidence of shear induced coalescence of nanocrystals in the vicinity of deformed regions. Nanocrystals grow in shear bands, come into contact, being attached and progressively coalesce under applied shear stress. - Highlights: • In-situ tensile straining test in TEM was investigated on CuZr-Based metallic glass. • Strain induces nanocrystallization and subsequent attachment and coalescence of nanocrystals. • The coalescence of nanocrystals compensates strain softening in metallic glasses.

  10. Knitmesh And Duplex-Nylon Type Coalescence Aids Use In Phase Disengagement

    Directory of Open Access Journals (Sweden)

    Hamit Topuz

    2017-10-01

    Full Text Available This study shows how dispersions consisted of droplet sizes ranging from 100 microns and above of immiscible liquids in agitated vessels coalesced and settled back to their phases by employing commercially known as knit-mesh made from stainless steel and nylon. These components known as higher surface energy and lower surface energy contained coalesce aids respectively. In addition to compare coalesce aid made purely from commercially known as duplex-nylon also used. The experimental set up was 13 scale of a single stage mixer-settler unit of the already existing unit which was in use at BNFL Springfield Works. The liquid liquid system made from 20 tri-butyl-phosphate TBP technical grade of odorless kerosene forming the light organic phase or solvent phase and 5 M nitric acid forming the heavy aqueous phase. The solvent phase contained 70 gram of uranium per liter. Uranium contained phase was supplied by above mentioned company.

  11. Coalescence measurements for evolving foams monitored by real-time projection imaging

    International Nuclear Information System (INIS)

    Myagotin, A; Helfen, L; Baumbach, T

    2009-01-01

    Real-time radiographic projection imaging together with novel spatio-temporal image analysis is presented to be a powerful technique for the quantitative analysis of coalescence processes accompanying the generation and temporal evolution of foams and emulsions. Coalescence events can be identified as discontinuities in a spatio-temporal image representing a sequence of projection images. Detection, identification of intensity and localization of the discontinuities exploit a violation criterion of the Fourier shift theorem and are based on recursive spatio-temporal image partitioning. The proposed method is suited for automated measurements of discontinuity rates (i.e., discontinuity intensity per unit time), so that large series of radiographs can be analyzed without user intervention. The application potential is demonstrated by the quantification of coalescence during the formation and decay of metal foams monitored by real-time x-ray radiography

  12. Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

    2012-01-01

    a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

  13. Thermal quenching of the yellow luminescence in GaN

    Science.gov (United States)

    Reshchikov, M. A.; Albarakati, N. M.; Monavarian, M.; Avrutin, V.; Morkoç, H.

    2018-04-01

    We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ˜0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques.

  14. Taevo Gans : särama pandud postmodernism / Kadi Viljak

    Index Scriptorium Estoniae

    Viljak, Kadi

    2004-01-01

    Viking Window ASi büroo ja ekspositsioonisaal 1979. a. Jüri Okase projekteeritud endises Paide KEKi remontmehaanikatöökoja hoones Mäos. Sisearhitekt Taevo Gans, kelle projekteeritud on ka ettevõtte juhi töölaud. T. Gansi kommentaarid. Ill.: 6 värv. sisevaadet

  15. GaN and ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Fuendling, Soenke; Soekmen, Uensal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Braunschweig (Germany); Laehnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-10-15

    GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self-organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Optical Properties and Lasing in GaN

    National Research Council Canada - National Science Library

    Song, J

    2001-01-01

    .... In the second article. femtosecond pump-probe transmission spectroscopy was used to study the nonequilibrium carrier dynamics in a GaN thin film at 10 K with carrier densities ranging from 4 x 10(exp 17) to 10(exp 19)/cu cm...

  17. Multimode multidrop serial coalescence effects during condensation on hierarchical superhydrophobic surfaces.

    Science.gov (United States)

    Rykaczewski, Konrad; Paxson, Adam T; Anand, Sushant; Chen, Xuemei; Wang, Zuankai; Varanasi, Kripa K

    2013-01-22

    The prospect of enhancing the condensation rate by decreasing the maximum drop departure diameter significantly below the capillary length through spontaneous drop motion has generated significant interest in condensation on superhydrophobic surfaces (SHS). The mobile coalescence leading to spontaneous drop motion was initially reported to occur only on hierarchical SHS, consisting of both nanoscale and microscale topological features. However, subsequent studies have shown that mobile coalescence also occurs on solely nanostructured SHS. Thus, recent focus has been on understanding the condensation process on nanostructured surfaces rather than on hierarchical SHS. In this work, we investigate the impact of microscale topography of hierarchical SHS on the droplet coalescence dynamics and wetting states during the condensation process. We show that isolated mobile and immobile coalescence between two drops, almost exclusively focused on in previous studies, are rare. We identify several new droplet shedding modes, which are aided by tangential propulsion of mobile drops. These droplet shedding modes comprise of multiple droplets merging during serial coalescence events, which culminate in formation of a drop that either departs or remains anchored to the surface. We directly relate postmerging drop adhesion to formation of drops in nanoscale as well as microscale Wenzel and Cassie-Baxter wetting states. We identify the optimal microscale feature spacing of the hierarchical SHS, which promotes departure of the highest number of microdroplets. This optimal surface architecture consists of microscale features spaced close enough to enable transition of larger droplets into micro-Cassie state yet, at the same time, provides sufficient spacing in-between the features for occurrence of mobile coalescence.

  18. Gallium adsorption on (0001) GaN surfaces

    International Nuclear Information System (INIS)

    Adelmann, Christoph; Brault, Julien; Mula, Guido; Daudin, Bruno; Lymperakis, Liverios; Neugebauer, Joerg

    2003-01-01

    We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. Based on the experimental results we find that for substrate temperatures and Ga fluxes typically used in molecular-beam epitaxy of GaN, finite equilibrium Ga surface coverages can be obtained. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. In particular, we show that a large range of Ga fluxes exists, where 2.5±0.2 monolayers (in terms of the GaN surface site density) of Ga are adsorbed on the GaN surface. We further demonstrate that the structure of this adsorbed Ga film is in good agreement with the laterally contracted Ga bilayer model predicted to be most stable for strongly Ga-rich surfaces [Northrup et al., Phys. Rev. B 61, 9932 (2000)]. For lower Ga fluxes, a discontinuous transition to Ga monolayer equilibrium coverage is found, followed by a continuous decrease towards zero coverage; for higher Ga fluxes, Ga droplet formation is found, similar to what has been observed during Ga-rich GaN growth. The boundary fluxes limiting the region of 2.5 monolayers equilibrium Ga adsorption have been measured as a function of the GaN substrate temperature giving rise to a Ga/GaN adsorption phase diagram. The temperature dependence is discussed within an ab initio based growth model for adsorption taking into account the nucleation of Ga clusters. This model consistently explains recent contradictory results of the activation energy describing the critical Ga flux for the onset of Ga droplet formation during Ga-rich GaN growth [Heying et al., J. Appl. Phys. 88, 1855 (2000); Adelmann et al., J. Appl. Phys. 91, 9638 (2002).

  19. Coalescence and 2.7 K black body distorsion in baryon symmetric Big Bang Cosmology

    International Nuclear Information System (INIS)

    Ramani, A.; Puget, J.L.

    1976-01-01

    We discuss here the efficiency of coalescence during the late phases of a baryon symmetric Big Bang Cosmology. We show that during the radiative period, coalescence cannot be as efficient as it was stated in a previous paper. During the matter dominated period, matter and antimatter might be separated on the scale of clusters of galaxies, but only at the expense of substantive distorsions of the 2.7 K black body background radiation. We compute lower limits to these distorsions as functions of the density of matter in the universe and show that only in the case of a very dilute universe can these values be reconciled with experimental results. (orig.) [de

  20. Bunch coalescing and bunch rotation in the Fermilab Main Ring: Operational experience and comparison with simulations

    International Nuclear Information System (INIS)

    Martin, P.S.; Wildman, D.W.

    1988-01-01

    The Fermilab Tevatron I proton-antiproton collider project requires that the Fermilab Main Ring produce intense bunches of protons and antiprotons for injection into the Tevatron. The process of coalescing a small number of harmonic number h=1113 bunches into a single bunch by bunch-rotating in a lower harmonic rf system is described.The Main Ring is also required to extract onto the antiproton production target bunches with as narrow a time spread as possible. This operation is also discussed. The operation of the bunch coalescing and bunch rotation are compared with simulations using the computer program ESME. 2 refs., 8 figs

  1. GW151226: Observation of Gravitational Waves from a 22-Solar-Mass Binary Black Hole Coalescence

    OpenAIRE

    Abbott, B. P.; Abbott, R.; Adhikari, R. X.; Anderson, S. B.; Arai, K.; Araya, M. C.; Barayoga, J. C.; Barish, B. C.; Berger, B. K.; Billingsley, G.; Blackburn, J. K.; Bork, R.; Brooks, A. F.; Brunett, S.; Cahillane, C.

    2016-01-01

    We report the observation of a gravitational-wave signal produced by the coalescence of two stellar-mass black holes. The signal, GW151226, was observed by the twin detectors of the Laser Interferometer Gravitational-Wave Observatory (LIGO) on December 26, 2015 at 03:38:53 UTC. The signal was initially identified within 70 s by an online matched-filter search targeting binary coalescences. Subsequent off-line analyses recovered GW151226 with a network signal-to-noise ratio of 13 and a signifi...

  2. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  3. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

    Science.gov (United States)

    Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

    2018-05-01

    Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

  5. Schottky contacts to polar and nonpolar n-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

    2012-01-15

    Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

  6. Chemical lift-off of (11-22) semipolar GaN using periodic triangular cavities

    Science.gov (United States)

    Jeon, Dae-Woo; Lee, Seung-Jae; Jeong, Tak; Baek, Jong Hyeob; Park, Jae-Woo; Jang, Lee-Woon; Kim, Myoung; Lee, In-Hwan; Ju, Jin-Woo

    2012-01-01

    Chemical lift-off of (11-22) semipolar GaN using triangular cavities was investigated. The (11-22) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (11-22) semipolar GaN by hydride vapor phase epitaxy for a free-standing (11-22) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (11-22) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

  7. Red shift of near band edge emission in cerium implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar

    2009-01-01

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  8. Understanding the Room Temperature Ferromagnetism in GaN Nanowires with Pd Doping

    International Nuclear Information System (INIS)

    Manna, S; De, S K

    2011-01-01

    We report the first synthesis and characterization of 4d transition metal palladium-doped GaN nanowires (NWs). Room temperature ferromagnetism has been observed in high quality Vapor Liquid Solid (VLS) epitaxy grown undoped n-type GaN nanowires. It was proposed that this type of magnetism is due to defects which are not observed in Bulk GaN because of large formation energy of defects in bulk GaN. Here we have successfully doped 4d transition metal Pd in GaN NWs. We find fairly strong and long-range ferromagnetic coupling between Pd substituted for Ga in GaN . The results suggest that 4d metals such as Pd may also be considered as candidates for ferromagnetic dopants in semiconductors.

  9. Red shift of near band edge emission in cerium implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)

    2009-02-21

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  10. Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

    Science.gov (United States)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-02

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  11. GW170814: A Three-Detector Observation of Gravitational Waves from a Binary Black Hole Coalescence

    NARCIS (Netherlands)

    Abbott, B. P.; Abbott, R.; Abbott, T. D.; Acernese, F.; Ackley, K.; Adams, C.; Adams, T.; Addesso, P.; Adhikari, R. X.; Adya, V. B.; Affeldt, C.; Afrough, M.; Agarwal, B.; Agathos, M.; Agatsuma, K.; Aggarwal, N.; Aguiar, O. D.; Aiello, L.; Ain, A.; Ajith, P.; Allen, B.; Allen, G.; Allocca, A.; Altin, P. A.; Amato, A.; Ananyeva, A.; Anderson, S. B.; Anderson, W. G.; Angelova, S. V.; Antier, S.; Appert, S.; Arai, K.; Araya, M. C.; Areeda, J. S.; Arnaud, N.; Arun, K. G.; Ascenzi, S.; Ashton, G.; Ast, M.; Aston, S. M.; Astone, P.; Atallah, D. V.; Aufmuth, P.; Aulbert, C.; AultONeal, K.; Austin, C.; Avila-Alvarez, A.; Babak, S.; Bacon, P.; Bader, M. K. M.; Bae, S.; Baker, P. T.; Baldaccini, F.; Ballardin, G.; Ballmer, S. W.; Banagiri, S.; Barayoga, J. C.; Barclay, S. E.; Barish, B. C.; Barker, D.; Barkett, K.; Barone, F.; Barr, B.; Barsotti, L.; Barsuglia, M.; Barta, D.; Barthelmy, S. D.; Bartlett, J.; Bartos, I.; Bassiri, R.; Basti, A.; Batch, J. C.; Bawaj, M.; Bayley, J. C.; Bazzan, M.; Becsy, B.; Beer, C.; Bejger, M.; Belahcene, I.; Bell, A. S.; Berger, B. K.; Bergmann, G.; Bero, J. J.; Berry, C. P. L.; Bersanetti, D.; Bertolini, A.; Betzwieser, J.; Bhagwat, S.; Bhandare, R.; Bilenko, I. A.; Billingsley, G.; Billman, C. R.; Birch, J.; Birney, R.; Birnholtz, O.; Biscans, S.; Biscoveanu, S.; Bisht, A.; Bitossi, M.; Biwer, C.; Bizouard, M. A.; Blackburn, J. K.; Blackman, J.; Blair, C. D.; Blair, D. G.; Blair, R. M.; Bloemen, S.; Bock, O.; Bode, N.; Boer, M.; Bogaert, G.; Bohe, A.; Bondu, F.; Bonilla, E.; Bonnand, R.; Boom, B. A.; Bork, R.; Boschi, V.; Bose, S.; Bossie, K.; Bouffanais, Y.; Bozzi, A.; Bradaschia, C.; Brady, P. R.; Branchesi, M.; Brau, J. E.; Briant, T.; Brillet, A.; Brinkmann, M.; Brisson, V.; Brockill, P.; Broida, J. E.; Brooks, A. F.; Brown, D. A.; Brown, D. D.; Brunett, S.; Buchanan, C. C.; Buikema, A.; Bulik, T.; Bulten, H. J.; Buonanno, A.; Buskulic, D.; Buy, C.; Byer, R. L.; Cabero, M.; Cadonati, L.; Cagnoli, G.; Cahillane, C.; Bustillo, J. Caldeorn; Callister, T. A.; Calloni, E.; Camp, J. B.; Canepa, M.; Canizares, P.; Cannon, K. C.; Cao, H.; Cao, J.; Capano, C. D.; Capocasa, E.; Carbognani, F.; Caride, S.; Carney, M. F.; Diaz, J. Casanueva; Casentini, C.; Caudill, S.; Cavaglia, M.; Cavalier, F.; Cavalieri, R.; Cella, G.; Cepeda, C. B.; Duran, P. Cerda; Cerretani, G.; Cesarini, E.; Chamberlin, S. J.; Chan, M.; Chao, S.; Charlton, P.; Chase, E.; Chassande-Mottin, E.; Chatterjee, D.; Chatziioannou, K.; Cheeseboro, B. D.; Chen, H. Y.; Chen, X.; Chen, Y.; Cheng, H. -P.; Chia, H.; Chincarini, A.; Chiummo, A.; Chmiel, T.; Cho, H. S.; Cho, M.; Chow, J. H.; Christensen, N.; Chu, Q.; Chua, A. J. K.; Chua, S.; Chung, A. K. W.; Chung, S.; Ciani, G.; Ciolfi, R.; Cirelli, C. E.; Cirone, A.; Clara, F.; Clark, J. A.; Clearwater, P.; Cleva, F.; Cocchieri, C.; Coccia, E.; Cohadon, P. -F.; Cohen, D.; Colla, A.; Collette, C. G.; Cominsky, L. R.; Constancio, M., Jr.; Conti, L.; Cooper, S. J.; Corban, P.; Corbitt, T. R.; Cordero-Carrion, I.; Corley, K. R.; Cornish, N.; Corsi, A.; Cortese, S.; Costa, C. A.; Coughlin, M. W.; Coughlin, S. B.; Coulon, J. -P.; Countryman, S. T.; Couvares, P.; Covas, P. B.; Cowan, E. E.; Coward, D. M.; Cowart, M. J.; Coyne, D. C.; Coyne, R.; Creighton, J. D. E.; Creighton, T. D.; Cripe, J.; Crowder, S. G.; Cullen, T. J.; Cumming, A.; Cunningham, L.; Cuoco, E.; Dal Canton, T.; Dalya, G.; Danilishin, S. L.; D'Antonio, S.; Danzmann, K.; Dasgupta, A.; Costa, C. F. Da Silva; Dattilo, V.; Dave, I.; Davier, M.; Davis, D.; Daw, E. J.; Day, B.; De, S.; Debra, D.; Degallaix, J.; De laurentis, M.; Deleglise, S.; Del Pozzo, W.; Demos, N.; Denker, T.; Dent, T.; De Pietri, R.; Dergachev, V.; De Rosa, R.; DeRosa, R. T.; De Rossi, C.; DeSalvo, R.; De Varona, O.; Devenson, J.; Dhurandhar, S.; Diaz, M. C.; Di Fiore, L.; Di Giovanni, M.; Di Girolamo, T.; Di Lieto, A.; Di Pace, S.; Di Palma, I.; Di Renzo, F.; Doctor, Z.; Dolique, V.; Donovan, F.; Dooley, K. L.; Doravari, S.; Dorrington, I.; Douglas, R.; Alvarez, M. Dovale; Downes, T. P.; Drago, M.; Dreissigacker, C.; Driggers, J. C.; Du, Z.; Ducrot, M.; Dupej, P.; Dwyer, S. E.; Edo, T. B.; Edwards, M. C.; Effler, A.; Eggenstein, H. -B.; Ehrens, P.; Eichholz, J.; Eikenberry, S. S.; Eisenstein, R. A.; Essick, R. C.; Estevez, D.; Etienne, Z. B.; Etzel, T.; Evans, M.; Evans, T. M.; Factourovich, M.; Fafone, V.; Fair, H.; Fairhurst, S.; Fan, X.; Farinon, S.; Farr, B.; Farr, W. M.; Fauchon-Jones, E. J.; Favata, M.; Fays, M.; Fee, C.; Fehrmann, H.; Feicht, J.; Fejer, M. M.; Fernandez-Galiana, A.; Ferrante, I.; Ferreira, E. C.; Ferrini, F.; Fidecaro, F.; Finstad, D.; Fiori, I.; Fiorucci, D.; Fishbach, M.; Fisher, R. P.; Fitz-Axen, M.; Flaminio, R.; Fletcher, M.; Fong, H.; Font, J. A.; Forsyth, P. W. F.; Forsyth, S. S.; Fournier, J. -D.; Frasca, S.; Frasconi, F.; Frei, Z.; Freise, A.; Frey, R.; Frey, V.; Fries, E. M.; Fritschel, P.; Frolov, V. V.; Fulda, P.; Fyffe, M.; Gabbard, H.; Gadre, B. U.; Gaebel, S. M.; Gair, J. R.; Gammaitoni, L.; Ganija, M. R.; Gaonkar, S. G.; Garcia-Quiros, C.; Garufi, F.; Gateley, B.; Gaudio, S.; Gaur, G.; Gayathri, V.; Gehrels, N.; Gemme, G.; Genin, E.; Gennai, A.; George, D.; George, J.; Gergely, L.; Germain, V.; Ghonge, S.; Ghosh, Abhirup; Ghosh, Archisman; Ghosh, S.; Giaime, J. A.; Giardina, K. D.; Giazotto, A.; Gill, K.; Glover, L.; Goetz, E.; Goetz, R.; Gomes, S.; Goncharov, B.; Gonzalez, G.; Castro, J. M. Gonzalez; Gopakumar, A.; Gorodetsky, M. L.; Gossan, S. E.; Gosselin, M.; Gouaty, R.; Grado, A.; Graef, C.; Granata, M.; Grant, A.; Gras, S.; Gray, C.; Greco, G.; Green, A. C.; Gretarsson, E. M.; Groot, P.; Grote, H.; Grunewald, S.; Gruning, P.; Guidi, G. M.; Guo, X.; Gupta, A.; Gupta, M. K.; Gushwa, K. E.; Gustafson, E. K.; Gustafson, R.; Halim, O.; Hall, B. R.; Hall, E. D.; Hamilton, E. Z.; Hammond, G.; Haney, M.; Hanke, M. M.; Hanks, J.; Hanna, C.; Hannam, M. D.; Hannuksela, O. A.; Hanson, J.; Hardwick, T.; Harms, J.; Harry, G. M.; Harry, I. W.; Hart, M. J.; Haster, C. -J.; Haughian, K.; Healy, J.; Heidmann, A.; Heintze, M. C.; Heitmann, H.; Hello, P.; Hemming, G.; Hendry, M.; Heng, I. S.; Hennig, J.; Heptonstall, A. W.; Heurs, M.; Hild, S.; Hinderer, T.; Hoak, D.; Hofman, D.; Holt, K.; Holz, D. E.; Hopkins, P.; Horst, C.; Hough, J.; Houston, E. A.; Howell, E. J.; Hu, Y. M.; Huerta, E. A.; Huet, D.; Hughey, B.; Husa, S.; Huttner, S. H.; Huynh-Dinh, T.; Indik, N.; Inta, R.; Intini, G.; Isa, H. N.; Isac, J. -M.; Isi, M.; Iyer, B. R.; Izumi, K.; Jacqmin, T.; Jani, K.; Jaranowski, P.; Jawahar, S.; Jimenez-Forteza, F.; Johnson, W. W.; Johnson-McDaniel, N. K.; Jones, D. I.; Jones, R.; Jonker, R. J. G.; Ju, L.; Junker, J.; Kalaghatgi, C. V.; Kalogera, V.; Kamai, B.; Kandhasamy, S.; Kang, G.; Kanner, J. B.; Kapadia, S. J.; Karki, S.; Karvinen, K. S.; Kasprzack, M.; Katolik, M.; Katsavounidis, E.; Katzman, W.; Kaufer, S.; Kawabe, K.; Kefelian, F.; Keitel, D.; Kemball, A. J.; Kennedy, R.; Kent, C.; Key, J. S.; Khalili, F. Y.; Khan, I.; Khan, S.; Khan, Z.; Khazanov, E. A.; Kijbunchoo, N.; Kim, Chunglee; Kim, C.; Kim, K.; Kim, W.; Kim, W. S.; Kim, Y-M.; Kimbrell, S. J.; King, E. J.; King, P. J.; Kinley-Hanlon, M.; Kirchhoff, R.; Kissel, J. S.; Kleybolte, L.; Klimenko, S.; Knowles, T. D.; Koch, P.; Koehlenbeck, S. M.; Koley, S.; Kondrashov, V.; Kontos, A.; Korobko, M.; Korth, W. Z.; Kowalska, I.; Kozak, D. B.; Kraemer, C.; Kringel, V.; Krishnan, B.; Krolak, A.; Kuehn, G.; Kumar, P.; Kumar, R.; Kumar, S.; Kuo, L.; Kutynia, A.; Kwang, S.; Lackey, B. D.; Lai, K. H.; Landry, M.; Lang, R. N.; Lange, J.; Lantz, B.; Lanza, R. K.; Lartaux-Vollard, A.; Lasky, P. D.; Laxen, M.; Lazzarini, A.; Lazzaro, C.; Leaci, P.; Leavey, S.; Lee, C. H.; Lee, H. K.; Lee, H. M.; Lee, H. W.; Lee, K.; Lehmann, J.; Lenon, A.; Leonardi, M.; Leroy, N.; Letendre, N.; Levin, Y.; Li, T. G. F.; Linker, S. D.; Littenberg, T. B.; Liu, J.; Lo, R. K. L.; Lockerbie, N. A.; London, L. T.; Lord, J. E.; Lorenzini, M.; Loriette, V.; Lormand, M.; Losurdo, G.; Lough, J. D.; Lousto, C. O.; Lovelace, G.; Lueck, H.; Lumaca, D.; Lundgren, A. P.; Lynch, R.; Ma, Y.; Macas, R.; Macfoy, S.; Machenschalk, B.; MacInnis, M.; Macleod, D. M.; Hernandez, I. Magana; Magana-Sandoval, F.; Zertuche, L. Magana; Magee, R. M.; Majorana, E.; Maksimovic, I.; Man, N.; Mandic, V.; Mangano, V.; Mansell, G. L.; Manske, M.; Mantovani, M.; Marchesoni, F.; Marion, F.; Marka, S.; Marka, Z.; Markakis, C.; Markosyan, A. S.; Markowitz, A.; Maros, E.; Marquina, A.; Marsh, P.; Martelli, F.; Martellini, L.; Martin, I. W.; Martin, R. M.; Martynov, D. V.; Mason, K.; Massera, E.; Masserot, A.; Massinger, T. J.; Masso-Reid, M.; Mastrogiovanni, S.; Matas, A.; Matichard, F.; Matone, L.; Mavalvala, N.; Mazumder, N.; McCarthy, R.; McClelland, D. E.; McCormick, S.; McCuller, L.; McGuire, S. C.; McIntyre, G.; McIver, J.; McManus, D. J.; McNeill, L.; McRae, T.; McWilliams, S. T.; Meacher, D.; Meadors, G. D.; Mehmet, M.; Meidam, J.; Mejuto-Villa, E.; Melatos, A.; Mendell, G.; Mercer, R. A.; Merilh, E. L.; Merzougui, M.; Meshkov, S.; Messenger, C.; Messick, C.; Metzdorff, R.; Meyers, P. M.; Miao, H.; Michel, C.; Middleton, H.; Mikhailov, E. E.; Milano, L.; Miller, A. L.; Miller, B. B.; Miller, J.; Millhouse, M.; Milovich-Goff, M. C.; Minazzoli, O.; Minenkov, Y.; Ming, J.; Mishra, C.; Mitra, S.; Mitrofanov, V. P.; Mitselmakher, G.; Mittleman, R.; Moffa, D.; Moggi, A.; Mogushi, K.; Mohan, M.; Mohapatra, S. R. P.; Montani, M.; Moore, C. J.; Moraru, D.; Moreno, G.; Morisaki, S.; Morriss, S. R.; Mours, B.; Mow-Lowry, C. M.; Mueller, G.; Muir, A. W.; Mukherjee, A.; Mukherjee, D.; Mukherjee, S.; Mukund, N.; Mullavey, A.; Munch, J.; Muniz, E. A.; Muratore, M.; Murray, P. G.; Napier, K.; Nardecchia, I.; Naticchioni, L.; Nayak, R. K.; Neilson, J.; Nelemans, G.; Nelson, T. J. N.; Nery, M.; Neunzert, A.; Nevin, L.; Newport, J. M.; Newton, G.; Ng, K. K. Y.; Nguyen, T. T.; Nichols, D.; Nielsen, A. B.; Nissanke, S.; Nitz, A.; Noack, A.; Nocera, F.; Nolting, D.; North, C.; Nuttall, L. K.; Oberling, J.; O'Dea, G. D.; Ogin, G. H.; Oh, J. J.; Oh, S. H.; Ohme, F.; Okada, M. A.; Oliver, M.; Oppermann, P.; Oram, R. J.; O'Reilly, B.; Ormiston, R.; Ortega, L. F.; O'Shaughnessy, R.; Ossokine, S.; Ottaway, D. J.; Overmier, H.; Owen, B. J.; Pace, A. E.; Page, J.; Page, M. A.; Pai, A.; Pai, S. A.; Palamos, J. R.; Palashov, O.; Palomba, C.; Pal-Singh, A.; Pan, Howard; Pan, Huang-Wei; Pang, B.; Pang, P. T. H.; Pankow, C.; Pannarale, F.; Pant, B. C.; Paoletti, F.; Paoli, A.; Papa, M. A.; Parida, A.; Parker, W.; Pascucci, D.; Pasqualetti, A.; Passaquieti, R.; Passuello, D.; Patil, M.; Patricelli, B.; Pearlstone, B. L.; Pedraza, M.; Pedurand, R.; Pekowsky, L.; Pele, A.; Penn, S.; Perez, C. J.; Perreca, A.; Perri, L. M.; Pfeiffer, H. P.; Phelps, M.; Piccinni, O. J.; Pichot, M.; Piergiovanni, F.; Pierro, V.; Pillant, G.; Pinard, L.; Pinto, I. M.; Pirello, M.; Pitkin, M.; Poe, M.; Poggiani, R.; Popolizio, P.; Porter, E. K.; Post, A.; Powell, J.; Prasad, J.; Pratt, J. W. W.; Pratten, G.; Predoi, V.; Prestegard, T.; Prijatelj, M.; Principe, M.; Privitera, S.; Prix, R.; Prodi, G. A.; Prokhorov, L. G.; Puncken, O.; Punturo, M.; Puppo, P.; Puerrer, M.; Qi, H.; Quetschke, V.; Quintero, E. A.; Quitzow-James, R.; Raab, F. J.; Rabeling, D. S.; Radkins, H.; Raffai, P.; Raja, S.; Rajan, C.; Rajbhandari, B.; Rakhmanov, M.; Ramirez, K. E.; Ramos-Buades, A.; Rapagnani, P.; Raymond, V.; Razzano, M.; Read, J.; Regimbau, T.; Rei, L.; Reid, S.; Reitze, D. H.; Ren, W.; Reyes, S. D.; Ricci, F.; Ricker, P. M.; Rieger, S.; Riles, K.; Rizzo, M.; Robertson, N. A.; Robie, R.; Robinet, F.; Rocchi, A.; Rolland, L.; Rollins, J. G.; Roma, V. J.; Romano, J. D.; Romano, R.; Romel, C. L.; Romie, J. H.; Rosinska, D.; Ross, M. P.; Rowan, S.; Rdiger, A.; Ruggi, P.; Rutins, G.; Ryan, K.; Sachdev, S.; Sadecki, T.; Sadeghian, L.; Sakellariadou, M.; Salconi, L.; Saleem, M.; Salemi, F.; Samajdar, A.; Sammut, L.; Sampson, L. M.; Sanchez, E. J.; Sanchez, L. E.; Sanchis-Gual, N.; Sandberg, V.; Sanders, J. R.; Sassolas, B.; Sathyaprakash, B. S.; Saulson, P. R.; Sauter, O.; Savage, R. L.; Sawadsky, A.; Schale, P.; Scheel, M.; Scheuer, J.; Schmidt, J.; Schmidt, P.; Schnabel, R.; Schofield, R. M. S.; Schonbeck, A.; Schreiber, E.; Schuette, D.; Schulte, B. W.; Schutz, B. F.; Schwalbe, S. G.; Scott, J.; Scott, S. M.; Seidel, E.; Sellers, D.; Sengupta, A. S.; Sentenac, D.; Sequino, V.; Sergeev, A.; Shaddock, D. A.; Shaffer, T. J.; Shah, A. A.; Shahriar, M. S.; Shaner, M. B.; Shao, L.; Shapiro, B.; Shawhan, P.; Sheperd, A.; Shoemaker, D. H.; Shoemaker, D. M.; Siellez, K.; Siemens, X.; Sieniawska, M.; Sigg, D.; Silva, A. D.; Singer, L. P.; Singh, A.; Singhal, A.; Sintes, A. M.; Slagmolen, B. J. J.; Smith, B.; Smith, R. J. E.; Smith, R. J. E.; Somala, S.; Son, E. J.; Sonnenberg, J. A.; Sorazu, B.; Sorrentino, F.; Souradeep, T.; Spencer, A. P.; Srivastava, A. K.; Staats, K.; Staley, A.; Steinke, M.; Steinlechner, J.; Steinlechner, S.; Steinmeyer, D.; Stevenson, S. P.; Stone, R.; Stops, D. J.; Strain, K. A.; Stratta, G.; Strigin, S. E.; Strunk, A.; Sturani, R.; Stuver, A. L.; Summerscales, T. Z.; Sun, L.; Sunil, S.; Suresh, J.; Sutton, P. J.; Swinkels, B. L.; Szczepanczyk, M. J.; Tacca, M.; Tait, S. C.; Talbot, C.; Talukder, D.; Tanner, D. B.; Tpai, M.; Taracchini, A.; Tasson, J. D.; Taylor, J. A.; Taylor, R.; Tewari, S. V.; Theeg, T.; Thies, F.; Thomas, E. G.; Thomas, M.; Thomas, P.; Thorne, K. A.; Thrane, E.; Tiwari, S.; Tiwari, V.; Tokmakov, K. V.; Toland, K.; Tonelli, M.; Tornasi, Z.; Torres-Forn, A.; Torrie, C. I.; Taya, D.; Travasso, F.; Traylor, G.; Trinastic, J.; Tringali, M. C.; Trozzo, L.; Tsang, K. W.; Tse, M.; Tso, R.; Tsukada, L.; Tsuna, D.; Tuyenbayev, D.; Ueno, K.; Ugolini, D.; Unnikrishnan, C. S.; Urban, A. L.; Usman, S. A.; Vahlbruch, H.; Vajente, G.; Valdes, G.; Vallisneri, M.; Van Bakel, N.; Van Beuzekom, M.; Van den Brand, J. F. J.; Van den Broeck, C.; Vander-Hyde, D. C.; Van der Schaaf, L.; Van Heijningen, J. V.; Van Veggel, A. A.; Vardaro, M.; Varma, V.; Vass, S.; Vasuth, M.; Vecchio, A.; Vedovato, G.; Veitch, J.; Veitch, P. J.; Venkateswara, K.; Venugopalan, G.; Verkindt, D.; Vetrano, F.; Vicer, A.; Viets, A. D.; Vinciguerra, S.; Vine, D. J.; Vinet, J. -Y.; Vitale, S.; Vo, T.; Vocca, H.; Vorvick, C.; Vyatchanin, S. P.; Wade, A. R.; Wade, L. E.; Wade, M.; Walet, R.; Walker, M.; Wallace, L.; Walsh, S.; Wang, G.; Wang, H.; Wang, J. Z.; Wang, W. H.; Wang, Y. F.; Ward, R. L.; Warner, J.; Was, M.; Watchi, J.; Weaver, B.; Wei, L. -W.; Weinert, M.; Weinstein, A. J.; Weiss, R.; Wen, L.; Wessel, E. K.; Weels, P.; Westerweck, J.; Westphal, T.; Wette, K.; Whelan, J. T.; Whitcomb, S. E.; Whiting, B. F.; Whittle, C.; Wilken, D.; Williams, D.; Williams, R. D.; Williamson, A. R.; Willis, J. L.; Willke, B.; Wimmer, M. H.; Winkler, W.; Wipf, C. C.; Wittel, H.; Woan, G.; Woehler, J.; Wofford, J.; Wong, K. W. K.; Worden, J.; Wright, J. L.; Wu, D. S.; Wysocki, D. M.; Xiao, S.; Yamamoto, H.; Yancey, C. C.; Yang, L.; Yap, M. J.; Yazback, M.; Yu, Hang; Yu, Haocun; Yvert, M.; Zadrozny, A.; Zanolin, M.; Zelenova, T.; Zendri, J. -P.; Zevin, M.; Zhang, L.; Zhang, M.; Zhang, T.; Zhang, Y. -H.; Zhao, C.; Zhou, M.; Zhou, Z.; Zhu, S. J.; Zhu, X. J.; Zimmerman, A. B.; Zucker, M. E.; Zweizig, J.

    2017-01-01

    On August 14, 2017 at 10∶30:43 UTC, the Advanced Virgo detector and the two Advanced LIGO detectors coherently observed a transient gravitational-wave signal produced by the coalescence of two stellar mass black holes, with a false-alarm rate of ≲1 in 27 000 years. The signal was observed with a

  12. Structure evolution during the cooling and coalesced cooling processes of Cu-Co bimetallic clusters

    International Nuclear Information System (INIS)

    Li Guojian; Wang Qiang; Li Donggang; Lue Xiao; He Jicheng

    2008-01-01

    Constant-temperature molecular dynamics with general EAM was employed to study the structure evolutions during the cooling and coalesced cooling processes of Cu-Co bimetallic clusters. It shows that the desired particle morphologies and structures can be obtained by controlling the composition and distribution of hetero atoms during synthesis process

  13. Application of coalescence and breakup models in a discrete bubble model for bubble columns

    NARCIS (Netherlands)

    van den Hengel, E.I.V.; Deen, N.G.; Kuipers, J.A.M.

    2005-01-01

    In this work, a discrete bubble model (DBM) is used to investigate the hydrodynamics, coalescence, and breakup occurring in a bubble column. The DBM, originally developed by Delnoij et al. (Chem. Eng. Sci. 1997, 52, 1429-1458; Chem. Eng. Sci. 1999, 54, 2217-2226),1,2 was extended to incorporate

  14. Flow-induced coalescence: arbitrarily mobile interface model and choice of its parameters

    Czech Academy of Sciences Publication Activity Database

    Fortelný, Ivan; Jůza, Josef

    2015-01-01

    Roč. 60, č. 10 (2015), s. 628-635 ISSN 0032-2725 R&D Projects: GA ČR GAP106/11/1069 Institutional support: RVO:61389013 Keywords : flow-induced coalescence * polymer blends * interface mobility Subject RIV: BK - Fluid Dynamics Impact factor: 0.718, year: 2015

  15. Void coalescence mechanism for combined tension and large amplitude cyclic shearing

    DEFF Research Database (Denmark)

    Nielsen, Kim Lau; Andersen, Rasmus Grau; Tvergaard, Viggo

    2017-01-01

    Void coalescence at severe shear deformation has been studied intensively under monotonic loading conditions, and the sequence of micro-mechanisms that governs failure has been demonstrated to involve collapse, rotation, and elongation of existing voids. Under intense shearing, the voids are flat...

  16. On hydrogen-induced plastic flow localization during void growth and coalescence

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, D.C.; Sofronis, P. [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, Urbana, IL 61801 (United States); Dodds, R.H. Jr. [Department of Civil and Environmental Engineering, University of Illinois at Urbana-Champaign, 205 North Mathews Avenue, Urbana, IL 61801 (United States)

    2007-11-15

    Hydrogen-enhanced localized plasticity (HELP) is recognized as a viable mechanism of hydrogen embrittlement. A possible way by which the HELP mechanism can bring about macroscopic material failure is through hydrogen-induced accelerated void growth and coalescence. Assuming a periodic array of spherical voids loaded axisymmetrically, we investigate the hydrogen effect on the occurrence of plastic flow localization upon void growth and its dependence on macroscopic stress triaxiality. Under a macroscopic stress triaxiality equal to 1 and prior to void coalescence, the finite element calculation results obtained with material data relevant to A533B steel indicate that a hydrogen-induced localized shear band forms at an angle of about 45 {sup circle} from the axis of symmetry. At triaxiality equal to 3, void coalescence takes place by accelerated hydrogen-induced localization of plasticity mainly in the ligament between the voids. Lastly, we discuss the numerical results within the context of experimental observations on void growth and coalescence in the presence of hydrogen. (author)

  17. Coalescence and compression in centrifuged emulsions studied with in situ optical microscopy

    NARCIS (Netherlands)

    Krebs, T.; Ershov, D.S.; Schroën, C.G.P.H.; Boom, R.M.

    2013-01-01

    We report an experimental method to investigate droplet dynamics in centrifuged emulsions and its application to study droplet compression and coalescence. The experimental setup permits in situ monitoring of an ensemble of droplets in a centrifuged monolayer of monodisperse emulsion droplets using

  18. Theory of peak coalescence in Fourier transform ion cyclotron resonance mass spectrometry.

    Science.gov (United States)

    Boldin, Ivan A; Nikolaev, Eugene N

    2009-10-01

    Peak coalescence, i.e. the merging of two close peaks in a Fourier transform ion cyclotron resonance (FTICR) mass spectrum at a high number of ions, plays an important role in various FTICR experiments. In order to describe the coalescence phenomenon we would like to propose a new theory of motion for ion clouds with close mass-to-charge ratios, driven by a uniform magnetic field and Coulomb interactions between the clouds. We describe the motion of the ion clouds in terms of their averaged drift motion in crossed magnetic and electric fields. The ion clouds are considered to be of constant size and their motion is studied in two dimensions. The theory deals with the first-order approximation of the equations of motion in relation to dm/m, where dm is the mass difference and m is the mass of a single ion. The analysis was done for an arbitrary inter-cloud interaction potential, which makes it possible to analyze finite-size ion clouds of any shape. The final analytical expression for the condition of the onset of coalescence is found for the case of uniformly charged spheres. An algorithm for finding this condition for an arbitrary interaction potential is proposed. The critical number of ions for the peak coalescence to take place is shown to depend quadratically on the magnetic field strength and to be proportional to the cyclotron radius and inversely proportional to the ion masses. Copyright (c) 2009 John Wiley & Sons, Ltd.

  19. Finding the best resolution for the Kingman-Tajima coalescent: theory and applications.

    Science.gov (United States)

    Sainudiin, Raazesh; Stadler, Tanja; Véber, Amandine

    2015-05-01

    Many summary statistics currently used in population genetics and in phylogenetics depend only on a rather coarse resolution of the underlying tree (the number of extant lineages, for example). Hence, for computational purposes, working directly on these resolutions appears to be much more efficient. However, this approach seems to have been overlooked in the past. In this paper, we describe six different resolutions of the Kingman-Tajima coalescent together with the corresponding Markov chains, which are essential for inference methods. Two of the resolutions are the well-known n-coalescent and the lineage death process due to Kingman. Two other resolutions were mentioned by Kingman and Tajima, but never explicitly formalized. Another two resolutions are novel, and complete the picture of a multi-resolution coalescent. For all of them, we provide the forward and backward transition probabilities, the probability of visiting a given state as well as the probability of a given realization of the full Markov chain. We also provide a description of the state-space that highlights the computational gain obtained by working with lower-resolution objects. Finally, we give several examples of summary statistics that depend on a coarser resolution of Kingman's coalescent, on which simulations are usually based.

  20. Identifying the rooted species tree from the distribution of unrooted gene trees under the coalescent.

    Science.gov (United States)

    Allman, Elizabeth S; Degnan, James H; Rhodes, John A

    2011-06-01

    Gene trees are evolutionary trees representing the ancestry of genes sampled from multiple populations. Species trees represent populations of individuals-each with many genes-splitting into new populations or species. The coalescent process, which models ancestry of gene copies within populations, is often used to model the probability distribution of gene trees given a fixed species tree. This multispecies coalescent model provides a framework for phylogeneticists to infer species trees from gene trees using maximum likelihood or Bayesian approaches. Because the coalescent models a branching process over time, all trees are typically assumed to be rooted in this setting. Often, however, gene trees inferred by traditional phylogenetic methods are unrooted. We investigate probabilities of unrooted gene trees under the multispecies coalescent model. We show that when there are four species with one gene sampled per species, the distribution of unrooted gene tree topologies identifies the unrooted species tree topology and some, but not all, information in the species tree edges (branch lengths). The location of the root on the species tree is not identifiable in this situation. However, for 5 or more species with one gene sampled per species, we show that the distribution of unrooted gene tree topologies identifies the rooted species tree topology and all its internal branch lengths. The length of any pendant branch leading to a leaf of the species tree is also identifiable for any species from which more than one gene is sampled.

  1. Influence of Bubble Approach Velocity on Coalescence in α-Terpineol and n-Octanol Solutions.

    Czech Academy of Sciences Publication Activity Database

    Orvalho, Sandra; Štiková, Lucie; Stanovský, Petr; Zedníková, Mária; Vejražka, Jiří; Růžička, Marek

    2018-01-01

    Roč. 54, č. 1 (2018), s. 73-80 ISSN 1643-1049 R&D Projects: GA ČR GA15-15467S Institutional support: RVO:67985858 Keywords : bubble * coalescence * frother Subject RIV: CI - Industrial Chemistry, Chemical Engineering OBOR OECD: Chemical process engineering Impact factor: 0.901, year: 2016

  2. Predicting Catastrophic Phase Inversion on the Basis of Droplet Coalescence Kinetics

    NARCIS (Netherlands)

    Vaessen, G.E.J.; Visschers, M.; Stein, H.N.

    1996-01-01

    A predictive model for catastrophic phase inversion, based on the kinetics of droplet breakup and coalescence, is presented here. Two inversion mechanisms can be distinguished, depending on the direction of the phase inversion process. With the surfactant predominantly present in the dispersed

  3. Modeling of the influence of matrix elasticity on coalescence probability of colliding droplets in shear flow

    Czech Academy of Sciences Publication Activity Database

    Fortelný, Ivan; Jůza, Josef

    2012-01-01

    Roč. 56, č. 6 (2012), s. 1393-1411 ISSN 0148-6055 R&D Projects: GA ČR GAP106/11/1069 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : coalescence * polymer blends * viscoelasticity Subject RIV: BK - Fluid Dynamics Impact factor: 2.795, year: 2012

  4. GeneRecon—A coalescent based tool for fine-scale association mapping

    DEFF Research Database (Denmark)

    Mailund, Thomas; Schierup, Mikkel Heide; Pedersen, Christian Nørgaard Storm

    2006-01-01

    GeneRecon is a tool for fine-scale association mapping using a coalescence model. GeneRecon takes as input case-control data from phased or unphased SNP and micro-satellite genotypes. The posterior distribution of disease locus position is obtained by Metropolis Hastings sampling in the state space...

  5. On localization and void coalescence as a precursor to ductile fracture.

    Science.gov (United States)

    Tekoğlu, C; Hutchinson, J W; Pardoen, T

    2015-03-28

    Two modes of plastic flow localization commonly occur in the ductile fracture of structural metals undergoing damage and failure by the mechanism involving void nucleation, growth and coalescence. The first mode consists of a macroscopic localization, usually linked to the softening effect of void nucleation and growth, in either a normal band or a shear band where the thickness of the band is comparable to void spacing. The second mode is coalescence with plastic strain localizing to the ligaments between voids by an internal necking process. The ductility of a material is tied to the strain at macroscopic localization, as this marks the limit of uniform straining at the macroscopic scale. The question addressed is whether macroscopic localization occurs prior to void coalescence or whether the two occur simultaneously. The relation between these two modes of localization is studied quantitatively in this paper using a three-dimensional elastic-plastic computational model representing a doubly periodic array of voids within a band confined between two semi-infinite outer blocks of the same material but without voids. At sufficiently high stress triaxiality, a clear separation exists between the two modes of localization. At lower stress triaxialities, the model predicts that the onset of macroscopic localization and coalescence occur simultaneously. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

  6. Influence of Energy and Temperature in Cluster Coalescence Induced by Deposition

    Directory of Open Access Journals (Sweden)

    J. C. Jiménez-Sáez

    2012-01-01

    Full Text Available Coalescence induced by deposition of different Cu clusters on an epitaxial Co cluster supported on a Cu(001 substrate is studied by constant-temperature molecular dynamics simulations. The degree of epitaxy of the final system increases with increasing separation between the centres of mass of the projectile and target clusters during the collision. Structure, roughness, and epitaxial order of the supported cluster also influence the degree of epitaxy. The effect of energy and temperature is determinant on the epitaxial condition of the coalesced cluster, especially both factors modify the generation, growth and interaction among grains. A higher temperature favours the epitaxial growth for low impact parameters. A higher energy contributes to the epitaxial coalescence for any initial separation between the projectile and target clusters. The influence of projectile energy is notably greater than the influence of temperature since higher energies allow greater and instantaneous atomic reorganizations, so that the number of arisen grains just after the collision becomes smaller. The appearance of grain boundary dislocations is, therefore, a decisive factor in the epitaxial growth of the coalesced cluster.

  7. GW151226: Observation of Gravitational Waves from a 22-Solar-Mass Binary Black Hole Coalescence

    NARCIS (Netherlands)

    Abbott, B. P.; Abbott, R.; Abbott, T. D.; Abernathy, M. R.; Acernese, F.; Ackley, K.; Adams, C.; Phythian-Adams, A.T.; Addesso, P.; Adhikari, R. X.; Adya, V. B.; Affeldt, C.; Agathos, M.; Agatsuma, K.; Aggarwal, N.T.; Aguiar, O. D.; Aiello, L.; Ain, A.; Ajith, P.; Allen, B.; Allocca, A.; Altin, P. A.; Anderson, S. B.; Anderson, W. G.; Arai, K.; Araya, M. C.; Arceneaux, C. C.; Areeda, J. S.; Arnaud, N.; Arun, K. G.; Ascenzi, S.; Ashton, G.; Ast, M.; Aston, S. M.; Astone, P.; Aufmuth, P.; Aulbert, C.; Babak, S.; Bacon, P.; Bader, M. K. M.; Baker, P. T.; Baldaccini, F.; Ballardin, G.; Ballmer, S. W.; Barayoga, J. C.; Barclay, S. E.; Barish, B. C.; Barker, R.D.; Barone, F.; Barr, B.; Barsotti, L.; Barsuglia, M.; Barta, D.; Bartlett, J.; Bartos, I.; Bassiri, R.; Basti, A.; Batch, J. C.; Baune, C.; Bavigadda, V.; Bazzan, M.; Bejger, M.; Bell, A. S.; Berger, B. K.; Bergmann, G.; Berry, C. P. L.; Bersanetti, D.; Bertolini, A.; Betzwieser, J.; Bhagwat, S.; Bhandare, R.; Bilenko, I. A.; Billingsley, G.; Birch, M.J.; Birney, R.; Birnholtz, O.; Biscans, S.; Bisht, A.; Bitossi, M.; Biwer, C.; Bizouard, M. A.; Blackburn, J. K.; Blair, C. D.; Blair, D. G.; Blair, R. M.; Bloemen, A.L.S.; Bock, O.; Boer, M.; Bogaert, J.G.; Bogan, C.; Bohe, A.; Bond, T.C; Bondu, F.; Bonnand, R.; Boom, B. A.; Bork, R.; Boschi, V.; Bose, S.; Bouffanais, Y.; Bozzi, A.; Bradaschia, C.; Brady, P. R.; Braginsky, V. B.; Branchesi, M.; Brau, J. E.; Briant, T.; Brillet, A.; Brinkmann, M.; Brisson, V.; Brockill, P.; Broida, J. E.; Brooks, A. F.; Brown, A.D.; Brown, D.; Brown, N. M.; Brunett, S.; Buchanan, C. C.; Buikema, A.; Bulik, T.; Bulten, H. J.; Buonanno, A.; Buskulic, D.; Buy, C.; Byer, R. L.; Cabero, M.; Cadonati, L.; Cagnoli, G.; Cahillane, C.; Bustillo, J. Calderon; Callister, T. A.; Calloni, E.; Camp, J. B.; Cannon, K. C.; Cao, J.; Capano, C. D.; Capocasa, E.; Carbognani, F.; Caride, S.; Diaz, J. Casanueva; Casentini, C.; Caudill, S.; Cavaglia, M.; Cavalier, F.; Cavalieri, R.; Cella, G.; Cepeda, C. B.; Baiardi, L. Cerboni; Cerretani, G.; Cesarini, E.; Chamberlin, S. J.; Chan, M.; Chao, D. S.; Charlton, P.; Chassande-Mottin, E.; Cheeseboro, B. D.; Chen, H. Y.; Chen, Y; Cheng, C.; Chincarini, A.; Chiummo, A.; Cho, H. S.; Cho, M.; Chow, J. H.; Christensen, N.; Chu, Qian; Chua, S. E.; Chung, E.S.; Ciani, G.; Clara, F.; Clark, J. A.; Cleva, F.; Coccia, E.; Cohadon, P. -F.; Colla, A.; Collette, C. G.; Cominsky, L.; Constancio, M., Jr.; Conte, A.; Conti, L.; Cook, D.; Corbitt, T. R.; Cornish, N.; Corsi, A.; Cortese, S.; Costa, A.C.; Coughlin, M. W.; Coughlin, S. B.; Coulon, J. -P.; Countryman, S. T.; Couvares, P.; Cowan, E. E.; Coward, D. M.; Cowart, M. J.; Coyne, D. C.; Coyne, R.; Craig, K.; Creighton, J. D. E.; Cripe, J.; Crowder, S. G.; Cumming, A.; Cunningham, A.L.; Cuoco, E.; Dal Canton, T.; Danilishin, S. L.; D'Antonio, S.; Danzmann, K.; Darman, N. S.; Dasgupta, A.; Costa, C. F. Da Silva; Dattilo, V.; Dave, I.; Davier, M.; Davies, G. S.; Daw, E. J.; Day, R.; De, S.; Debra, D.; Debreczeni, G.; Degallaix, J.; De laurentis, M.; Deleglise, S.; Del Pozzo, W.; Denker, T.; Dent, T.; Dergachev, V.A.; Rosa, R.; DeRosa, R. T.; DeSalvo, R.; Devine, R. C.; Dhurandhar, S.; Diaz, M. C.; Di Fiore, L.; Giovanni, M.G.; Di Girolamo, T.; Di Lieto, A.; Di Pace, S.; Di Palma, I.; Di Virgilio, A.; Dolique, V.; Donovan, F.; Dooley, K. L.; Doravari, S.; Douglas, R.; Downes, T. P.; Drago, M.; Drever, R. W. P.; Driggers, J. C.; Ducrot, M.; Dwyer, S. E.; Edo, T. B.; Edwards, M. C.; Effler, A.; Eggenstein, H. -B.; Ehrens, P.; Eichholz, J.; Eikenberry, S. S.; Engels, W.; Essick, R. C.; Etzel, T.; Evans, T. M.; Evans, T. M.; Everett, R.; Factourovich, M.; Fafone, V.; Fair, H.; Fairhurst, S.; Fan, X.M.; Fang, Q.; Farinon, S.; Farr, B.; Farr, W. M.; Favata, M.; Fays, M.; Fehrmann, H.; Fejer, M. M.; Fenyvesi, E.; Ferrante, I.; Ferreira, E. C.; Ferrini, F.; Fidecaro, F.; Fiori, I.; Fiorucci, D.; Fisher, R. P.; Flaminio, R.; Fletcher, M; Fong, H.; Fournier, J. -D.; Frasca, S.; Frasconi, F.; Frei, Z.; Freise, A.; Frey, R.; Frey, V.; Fritschel, P.; Frolov, V. V.; Fulda, P.; Fyffe, M.; Gabbard, H. A. G.; Gair, J. R.; Gammaitoni, L.; Gaonkar, S. G.; Garufi, F.; Gaur, G.; Gehrels, N.; Gemme, G.; Geng, P.; Genin, E.; Gennai, A.; George, J.; Gergely, L.; Germain, V.; Ghosh, Abhirup; Ghosh, Archisman; Ghosh, S.; Giaime, J. A.; Giardina, K. D.; Giazotto, A.; Gill, K.P.; Glaefke, A.; Goetz, E.; Goetz, R.; Gondan, L.; Gonzalez, Idelmis G.; Castro, J. M. Gonzalez; Gopakumar, A.; Gordon, N. A.; Gorodetsky, M. L.; Gossan, S. E.; Lee-Gosselin, M.; Gouaty, R.; Grado, A.; Graef, C.; Graff, P. B.; Granata, M.; Grant, A.; Gras, S.; Gray, C.M.; Greco, G.; Green, A. C.; Groot, P.; Grote, H.; Grunewald, S.; Guidi, G. M.; Guo, X.; Gupta, A.; Gupta, M. K.; Gushwa, K. E.; Gustafson, E. K.; Gustafson, R.; Hacker, J. J.; Buffoni-Hall, R.; Hall, E. D.; Hamilton-Ayers, M.; Hammond, G.L.; Haney, M.; Hanke, M. M.; Hanks, J.; Hanna, C.; Hannam, M. D.; Hanson, P.J.; Hardwick, T.; Harms, J.; Harry, G. M.; Harry, I. W.; Hart, M. J.; Hartman, M. T.; Haster, C. -J.; Haughian, K.; Healy, J.; Heidmann, A.; Heintze, M. C.; Heitmann, H.; Hello, P.; Hemming, G.; Hendry, M.; Heng, I. S.; Hennig, J.; Henry, J.A.; Heptonstall, A. W.; Heurs, M.; Hild, S.; Hoak, D.; Hofman, D.; Holt, K.; Holz, D. E.; Hopkins, P.; Hough, J.; Houston, E. A.; Howell, E. J.; Hu, Y. M.; Huang, S.; Huerta, E. A.; Huet, D.; Hughey, B.; Husa, S.; Huttner, S. H.; Huynh-Dinh, T.; Indik, N.; Ingram, D. R.; Inta, R.; Isa, H. N.; Isac, J. -M.; Isi, M.; Isogai, T.; Iyer, B. R.; Izumi, K.; Jacqmin, T.; Jang, D.H.; Jani, K.; Jaranowski, P.; Jawahar, S.; Jian, L.; Jimenez-Forteza, F.; Johnson, W.; Johnson-McDaniel, N. K.; Jones, I.D.; Jones, R.; Jonker, R. J. G.; Ju, L.; Haris, K.; Kalaghatgi, C. V.; Kalogera, V.; Kandhasamy, S.; Kang, G.H.; Kanner, J. B.; Kapadia, S. J.; Karki, S.; Karvinen, K. S.; Kasprzack, M.; Katsavounidis, E.; Katzman, W.; Kaufer, S.; Kaur, T.; Kawabe, K.; Kefelian, F.; Kehl, M. S.; Keitel, D.; Kelley, D. B.; Kells, W.; Kennedy, R.E.; Key, J. S.; Khalili, F. Y.; Khan, I.; Khan., S.; Khan, Z.; Khazanov, E. A.; Kijbunchoo, N.; Kim, Chi-Woong; Kim, Chunglee; Kim, J.; Kim, K.; Kim, Namjun; Kim, W.; Kim, Y.M.; Kimbrell, S. J.; King, E. J.; King, P. J.; Kissel, J. S.; Klein, B.; Kleybolte, L.; Klimenko, S.; Koehlenbeck, S. M.; Koley, S.; Kondrashov, V.; Kontos, A.; Korobko, M.; Korth, W. Z.; Kowalska, I.; Kozak, D. B.; Kringel, V.; Krishnan, B.; Krolak, A.; Krueger, C.; Kuehn, G.; Kumar, P.; Kumar, R.; Kuo, L.; Kutynia, A.; Lackey, B. D.; Landry, M.; Lange, J.; Lantz, B.; Lasky, P. D.; Laxen, M.; Lazzarini, A.; Lazzaro, C.; Leaci, P.; Leavey, S.; Lebigot, E. O.; Lee, C.H.; Lee, K.H.; Lee, M.H.; Lee, K.; Lenon, A.; Leonardi, M.; Leong, J. R.; Leroy, N.; Letendre, N.; Levin, Y.; Lewis, J. B.; Li, T. G. F.; Libson, A.; Littenberg, T. B.; Lockerbie, N. A.; Lombardi, A. L.; London, L. T.; Lord, J. E.; Lorenzini, M.; Loriette, V.; Lormand, M.; Losurdo, G.; Lough, J. D.; Lousto, C. O.; Lueck, H.; Lundgren, A. P.; Lynch, R.; Ma, Y.; Machenschalk, B.; MacInnis, M.; Macleod, D. M.; Magana-Sandoval, F.; Zertuche, L. Magana; Magee, R. M.; Majorana, E.; Maksimovic, I.; Malvezzi, V.; Man, N.; Mandel, I.; Mandic, V.; Mangano, V.; Mansell, G. L.; Manske, M.; Mantovani, M.; Marchesoni, F.; Marion, F.; Marka, S.; Marka, Z.; Markosyan, A. S.; Maros, E.; Martelli, F.; Martellini, L.; Martin, I. W.; Martynov, D. V.; Marx, J. N.; Mason, K.; Masserot, A.; Massinger, T. J.; Masso-Reid, M.; Mastrogiovanni, S.; Matichard, F.; Matone, L.; Mavalvala, N.; Mazumder, N.; McCarthy, R.; McClelland, D. E.; McCormick, S.; McGuire, S. C.; McIntyre, G.; McIver, J.; McManus, D. J.; McRae, T.; McWilliams, S. T.; Meacher, D.; Meadors, G. D.; Meidam, J.; Melatos, A.; Mendell, G.; Mercer, R. A.; Merilh, E. L.; Merzougui, M.; Meshkov, S.; Messenger, C.; Messick, C.; Metzdorff, R.; Meyers, P. M.; Mezzani, F.; Miao, H.; Michel, C.; Middleton, H.; Mikhailov, E. E.; Milano, L.; Miller, A. L.; Miller, A. L.; Miller, B.; Miller, J.; Millhouse, M.; Minenkov, Y.; Ming, J.; Mirshekari, S.; Mishra, C.; Mitra, S.; Mitrofanov, V. P.; Mitselmakher, G.; Mittleman, R.; Moggi, A.; Mohan, M.; Mohapatra, S. R. P.; Montani, M.; Moore, B.C.; Moore, J.C.; Moraru, D.; Gutierrez Moreno, M.; Morriss, S. R.; Mossavi, K.; Mours, B.; Mow-Lowry, C. M.; Mueller, G.; Muir, A. W.; Mukherjee, Arunava; Mukherjee, S.D.; Mukherjee, S.; Mukund, N.; Mullavey, A.; Munch, J.; Murphy, D. J.; Murray, P.G.; Mytidis, A.; Nardecchia, I.; Naticchioni, L.; Nayak, R. K.; Nedkova, K.; Nelemans, G.; Nelson, T. J. N.; Gutierrez-Neri, M.; Neunzert, A.; Newton-Howes, G.; Nguyen, T. T.; Nielsen, A. B.; Nissanke, S.; Nitz, A.; Nocera, F.; Nolting, D.; Normandin, M. E. N.; Nuttall, L. K.; Oberling, J.; Ochsner, E.; O'Dell, J.; Oelker, E.; Ogin, G. H.; Oh, J.; Oh, S. H.; Ohme, F.; Oliver, M. B.; Oppermann, P.; Oram, Richard J.; O'Reilly, B.; O'Shaughnessy, R.; Ottaway, D. J.; Overmier, H.; Owen, B. J.; Pai, A.; Pai, S. A.; Palamos, J. R.; Palashov, O.; Palomba, C.; Pal-Singh, A.; Pan, H.; Pankow, C.; Pannarale, F.; Pant, B. C.; Paoletti, F.; Paoli, A.; Papa, M. A.; Paris, H. R.; Parker, W.S; Pascucci, D.; Pasqualetti, A.; Passaquieti, R.; Passuello, D.; Patricelli, B.; Patrick, Z.; Pearlstone, B. L.; Pedraza, M.; Pedurand, R.; Pekowsky, L.; Pele, A.; Penn, S.; Perreca, A.; Perri, L. M.; Pfeiffer, H. P.; Phelps, M.; Piccinni, O. J.; Pichot, M.; Piergiovanni, F.; Pierro, V.; Pillant, G.; Pinard, L.; Pinto, I. M.; Pitkin, M.; Poe, M.; Poggiani, R.; Popolizio, P.; Post, A.; Powell, J.; Prasad, J.; Predoi, V.; Prestegard, T.; Price, L. R.; Prijatelj, M.; Principe, M.; Privitera, S.; Prix, R.; Prodi, G. A.; Prokhorov, L. G.; Puncken, O.; Punturo, M.; Puppo, P.; Puerrer, M.; Qi, H.; Qin, J.; Qiu, S.; Quetschke, V.; Quintero, E. A.; Quitzow-James, R.; Raab, F. J.; Rabeling, D. S.; Radkins, H.; Raffai, P.; Raja, S.; Rajan, C.; Rakhmanov, M.; Rapagnani, P.; Raymond, V.; Razzano, M.; Re, V.; Read, J.; Reed, C. M.; Regimbau, T.; Rei, L.; Reid, S.; Reitze, D. H.; Rew, H.; Reyes, S. D.; Ricci, F.; Riles, K.; Rizzo, D.M.; Robertson, N. A.; Robie, R.; Robinet, F.; Rocchi, A.; Rolland, L.; Rollins, J. G.; Roma, V. J.; Romano, J. D.; Romano, R.; Romanov, G.; Romie, J. H.; Rosinska, D.; Rowan, S.; Ruediger, A.; Ruggi, P.; Ryan, K.A.; Sachdev, P.S.; Sadecki, T.; Sadeghian, L.; Sakellariadou, M.; Salconi, L.; Saleem, M.; Salemi, F.; Samajdar, A.; Sammut, L.; Sanchez, E. J.; Sandberg, V.; Sandeen, B.; Sanders, J. R.; Sassolas, B.; Sathyaprakash, B. S.; Saulson, P. R.; Sauter, O. E. S.; Savage, R. L.; Sawadsky, A.; Schale, P.; Schilling, R.; Schmidt, J; Schmidt, P.; Schnabel, R.B.; Schofield, R. M. S.; Schoenbeck, A.; Schreiber, K.E.C.; Schuette, D.; Schutz, B. F.; Scott, J.; Scott, M.S.; Sellers, D.; Sengupta, A. S.; Sentenac, D.; Sequino, V.; Sergeev, A.; Setyawati, Y.; Shaddock, D. A.; Shaffer, T. J.; Shahriar, M. S.; Shaltev, M.; Shapiro, B.; Shawhan, P.; Sheperd, A.; Shoemaker, D. H.; Shoemaker, D. M.; Siellez, K.; Siemens, X.; Sieniawska, M.; Sigg, D.; Silva, António Dias da; Singer, A; Singer, L. P.; Singh, A.; Singh, R.; Singhal, A.; Sintes, A. M.; Slagmolen, B. J. J.; Smith, R. J. E.; Smith, N.D.; Smith, R. J. E.; Son, E. J.; Sorazu, B.; Sorrentino, F.; Souradeep, T.; Srivastava, A. K.; Staley, A.; Steinke, M.; Steinlechner, J.; Steinlechner, S.; Steinmeyer, D.; Stephens, B. C.; Stevenson-Moore, P.; Stone, J.R.; Strain, K. A.; Straniero, N.; Stratta, G.; Strauss, N. A.; Strigin, S. E.; Sturani, R.; Stuver, A. L.; Summerscales, T. Z.; Sun, L.; Sunil, S.; Sutton, P. J.; Swinkels, B. L.; Szczepanczyk, M. J.; Tacca, M.D.; Talukder, D.; Tanner, D. B.; Tapai, M.; Tarabrin, S. P.; Taracchini, A.; Taylor, W.R.; Theeg, T.; Thirugnanasambandam, M. P.; Thomas, E. G.; Thomas, M.; Thomas, P.; Thorne, K. A.; Thrane, E.; Tiwari, S.; Tiwari, V.; Tokmakov, K. V.; Toland, K.; Tomlinson, C.; Tonelli, M.; Tornasi, Z.; Torres, C. V.; Torrie, C. I.; Toyra, D.; Travasso, F.; Traylor, G.; Trifiro, D.; Tringali, M. C.; Trozzo, L.; Tse, M.; Turconi, M.; Tuyenbayev, D.; Ugolini, D.; Unnikrishnan, C. S.; Urban, A. L.; Usman, S. A.; Vahlbruch, H.; Vajente, G.; Valdes, G.; Vallisneri, M.; van Bakel, N.; Van Beuzekom, Martin; van den Brand, J. F. J.; Van Den Broeck, C.F.F.; Vander-Hyde, D. C.; van der Schaaf, L.; van Heijningen, J. V.; van Veggel, A. A.; Vardaro, M.; Vass, S.; Vasuth, M.; Vaulin, R.; Vecchio, A.; Vedovato, G.; Veitch, J.; Veitch, P.J.; Venkateswara, K.; Verkindt, D.; Vetrano, F.; Vicere, A.; Vinciguerra, S.; Vine, D. J.; Vinet, J. -Y.; Vitale, S.; Vo, T.; Vocca, H.; Vorvick, C.; Voss, D. V.; Vousden, W. D.; Vyatchanin, S. P.; Wade, A. R.; Wade, L. E.; Wade, MT; Walker, M.; Wallace, L.; Walsh, S.; Wang, G.; Wang, H.; Wang, M.; Wang, X.; Wang, Y.; Ward, R. L.; Warner, J.; Was, M.; Weaver, B.; Wei, L. -W.; Weinert, M.; Weinstein, A. J.; Weiss, R.; Wen, L.M.; Wessels, P.; Westphal, T.; Wette, K.; Whelan, J. T.; Whiting, B. F.; Williams, D.R.; Williamson, A. R.; Willis, J. L.; Willke, B.; Wimmer, M. H.; Winkler, W.; Wipf, C. C.; Wittel, H.; Woan, G.; Woehler, J.; Worden, J.; Wright, J.L.; Wu, D.S.; Wu, G.; Yablon, J.; Yam, W.; Yamamoto, H.; Yancey, C. C.; Yu, H.; Yvert, M.; Zadrozny, A.; Zangrando, L.; Zanolin, M.; Zendri, J. -P.; Zevin, M.; Zhang, L.; Zhang, M.; Zhang, Y.; Zhao, C.; Zhou, M.; Zhou, Z.; Zhu, X. J.; Zucker, M. E.; Zuraw, S. E.; Zweizig, J.; Boyle, M.; Hemberger, D.; Kidder, L. E.; Lovelace, G.; Ossokine, S.; Scheel, M.; Szilagyi, B.; Teukolsky, S.

    2016-01-01

    We report the observation of a gravitational-wave signal produced by the coalescence of two stellar-mass black holes. The signal, GW151226, was observed by the twin detectors of the Laser Interferometer Gravitational-Wave Observatory (LIGO) on December 26, 2015 at 03:38:53 UTC. The signal was

  8. Directly comparing GW150914 with numerical solutions of Einstein's equations for binary black hole coalescence

    NARCIS (Netherlands)

    Abbott, B. P.; Abbott, R.; Abbott, T. D.; Abernathy, M. R.; Acernese, F.; Ackley, K.; Adams, C.; Phythian-Adams, A.T.; Addesso, P.; Adhikari, R. X.; Adya, V. B.; Affeldt, C.; Agathos, M.; Agatsuma, K.; Aggarwal, N.T.; Aguiar, O. D.; Aiello, L.; Ain, A.; Ajith, P.; Allen, B.; Allocca, A.; Altin, P. A.; Anderson, S. B.; Anderson, W. G.; Arai, K.; Araya, M. C.; Arceneaux, C. C.; Areeda, J. S.; Arnaud, N.; Arun, K. G.; Ascenzi, S.; Ashton, G.; Ast, M.; Aston, S. M.; Astone, P.; Aufmuth, P.; Aulbert, C.; Babak, S.; Bacon, P.; Bader, M. K. M.; Baker, P. T.; Baldaccini, F.; Ballardin, G.; Ballmer, S. W.; Barayoga, J. C.; Barclay, S. E.; Barish, B. C.; Barker, R.D.; Barone, F.; Barr, B.; Barsotti, L.; Barsuglia, M.; Barta, D.; Bartlett, J.; Bartos, I.; Bassiri, R.; Basti, A.; Batch, J. C.; Baune, C.; Bavigadda, V.; Bazzan, M.; Bejger, M.; Bell, A. S.; Berger, B. K.; Bergmann, G.; Berry, C. P. L.; Bersanetti, D.; Bertolini, A.; Betzwieser, J.; Bhagwat, S.; Bhandare, R.; Bilenko, I. A.; Billingsley, G.; Birch, M.J.; Birney, R.; Biscans, S.; Bisht, A.; Bitossi, M.; Biwer, C.; Bizouard, M. A.; Blackburn, J. K.; Blair, C. D.; Blair, D. G.; Blair, R. M.; Bloemen, A.L.S.; Bock, O.; Boer, M.; Bogaert, J.G.; Bogan, C.; Bohe, A.; Bond, T.C; Bondu, F.; Bonnand, R.; Boom, B. A.; Bork, R.; Boschi, V.; Bose, S.; Bouffanais, Y.; Bozzi, A.; Bradaschia, C.; Brady, P. R.; Braginsky, V. B.; Branchesi, M.; Brau, J. E.; Briant, T.; Brillet, A.; Brinkmann, M.; Brisson, V.; Brockill, P.; Broida, J. E.; Brooks, A. F.; Brown, A.D.; Brown, D.; Brown, N. M.; Brunett, S.; Buchanan, C. C.; Buikema, A.; Bulik, T.; Bulten, H. J.; Buonanno, A.; Buskulic, D.; Buy, C.; Byer, R. L.; Cabero, M.; Cadonati, L.; Cagnoli, G.; Cahillane, C.; Bustillo, J. Calderon; Callister, T. A.; Calloni, E.; Camp, J. B.; Cannon, K. C.; Cao, J.; Capano, C. D.; Capocasa, E.; Carbognani, F.; Caride, S.; Diaz, J. Casanueva; Casentini, C.; Caudill, S.; Cavaglia, M.; Cavalier, F.; Cavalieri, R.; Cella, G.; Cepeda, C. B.; Baiardi, L. Cerboni; Cerretani, G.; Cesarini, E.; Chamberlin, S. J.; Chan, M.; Chao, D. S.; Charlton, P.; Chassande-Mottin, E.; Cheeseboro, B. D.; Chen, H. Y.; Chen, Y; Cheng, C.; Chincarini, A.; Chiummo, A.; Cho, H. S.; Cho, M.; Chow, J. H.; Christensen, N.; Chu, Qian; Chua, S. E.; Chung, E.S.; Ciani, G.; Clara, F.; Clark, J. A.; Cleva, F.; Coccia, E.; Cohadon, P. -F.; Colla, A.; Collette, C. G.; Cominsky, L.; Constancio, M., Jr.; Conte, A.; Conti, L.; Cook, D.; Corbitt, T. R.; Cornish, N.; Corsi, A.; Cortese, S.; Costa, A.C.; Coughlin, M. W.; Coughlin, S. B.; Coulon, J. -P.; Countryman, S. T.; Couvares, P.; Cowan, E. E.; Coward, D. M.; Cowart, M. J.; Coyne, D. C.; Coyne, R.; Craig, K.; Creighton, J. D. E.; Cripe, J.; Crowder, S. G.; Cumming, A.; Cunningham, A.L.; Cuoco, E.; Dal Canton, T.; Danilishin, S. L.; D'Antonio, S.; Danzmann, K.; Darman, N. S.; Dasgupta, A.; Costa, C. F. Da Silva; Dattilo, V.; Dave, I.; Davier, M.; Davies, G. S.; Daw, E. J.; Day, R.; De, S.; Debra, D.; Debreczeni, G.; Degallaix, J.; De laurentis, M.; Deleglise, S.; Del Pozzo, W.; Denker, T.; Dent, T.; Dergachev, V.A.; Rosa, R.; DeRosa, R. T.; DeSalvo, R.; Devine, R. C.; Dhurandhar, S.; Diaz, M. C.; Di Fiore, L.; Giovanni, M.G.; Di Girolamo, T.; Di Lieto, A.; Di Pace, S.; Di Palma, I.; Di Virgilio, A.; Dolique, V.; Donovan, F.; Dooley, K. L.; Doravari, S.; Douglas, R.; Downes, T. P.; Drago, M.; Drever, R. W. P.; Driggers, J. C.; Ducrot, M.; Dwyer, S. E.; Edo, T. B.; Edwards, M. C.; Effler, A.; Eggenstein, H. -B.; Ehrens, P.; Eichholz, J.; Eikenberry, S. S.; Engels, W.; Essick, R. C.; Etzel, T.; Evans, T. M.; Evans, T. M.; Everett, R.; Factourovich, M.; Fafone, V.; Fair, H.; Fan, X.M.; Fang, Q.; Farinon, S.; Farr, B.; Farr, W. M.; Favata, M.; Fays, M.; Fehrmann, H.; Fejer, M. M.; Fenyvesi, E.; Ferrante, I.; Ferreira, E. C.; Ferrini, F.; Fidecaro, F.; Fiori, I.; Fiorucci, D.; Fisher, R. P.; Flaminio, R.; Fletcher, M; Fournier, J. -D.; Frasca, S.; Frasconi, F.; Frei, Z.; Freise, A.; Frey, R.; Frey, V.; Fritschel, P.; Frolov, V. V.; Fulda, P.; Fyffe, M.; Gabbard, H. A. G.; Gair, J. R.; Gammaitoni, L.; Gaonkar, S. G.; Garufi, F.; Gaur, G.; Gehrels, N.; Gemme, G.; Geng, P.; Genin, E.; Gennai, A.; George, J.; Gergely, L.; Germain, V.; Ghosh, Abhirup; Ghosh, Archisman; Ghosh, S.; Giaime, J. A.; Giardina, K. D.; Giazotto, A.; Gill, K.P.; Glaefke, A.; Goetz, E.; Goetz, R.; Gondan, L.; Gonzalez, Idelmis G.; Castro, J. M. Gonzalez; Gopakumar, A.; Gordon, N. A.; Gorodetsky, M. L.; Gossan, S. E.; Lee-Gosselin, M.; Gouaty, R.; Grado, A.; Graef, C.; Graff, P. B.; Granata, M.; Grant, A.; Gras, S.; Gray, C.M.; Greco, G.; Green, A. C.; Groot, P.; Grote, H.; Grunewald, S.; Guidi, G. M.; Guo, X.; Gupta, A.; Gupta, M. K.; Gushwa, K. E.; Gustafson, E. K.; Gustafson, R.; Hacker, J. J.; Buffoni-Hall, R.; Hall, E. D.; Hammond, G.L.; Haney, M.; Hanke, M. M.; Hanks, J.; Hanna, C.; Hanson, P.J.; Hardwick, T.; Harms, J.; Harry, G. M.; Harry, I. W.; Hart, M. J.; Hartman, M. T.; Haster, C. -J.; Haughian, K.; Heidmann, A.; Heintze, M. C.; Heitmann, H.; Hello, P.; Hemming, G.; Hendry, M.; Heng, I. S.; Hennig, J.; Henry, J.A.; Heptonstall, A. W.; Heurs, M.; Hild, S.; Hoak, D.; Hofman, D.; Holt, K.; Holz, D. E.; Hopkins, P.; Hough, J.; Houston, E. A.; Howell, E. J.; Hu, Y. M.; Huang, S.; Huerta, E. A.; Huet, D.; Hughey, B.; Huttner, S. H.; Huynh-Dinh, T.; Indik, N.; Ingram, D. R.; Inta, R.; Isa, H. N.; Isac, J. -M.; Isi, M.; Isogai, T.; Iyer, B. R.; Izumi, K.; Jacqmin, T.; Jang, D.H.; Jani, K.; Jaranowski, P.; Jawahar, S.; Jian, L.; Jimenez-Forteza, F.; Johnson, W.; Jones, I.D.; Jones, R.; Jonker, R. J. G.; Ju, L.; Haris, K.; Kalaghatgi, C. V.; Kalogera, V.; Kandhasamy, S.; Kang, G.H.; Kanner, J. B.; Kapadia, S. J.; Karki, S.; Karvinen, K. S.; Kasprzack, M.; Katsavounidis, E.; Katzman, W.; Kaufer, S.; Kaur, T.; Kawabe, K.; Kefelian, F.; Kehl, M. S.; Keitel, D.; Kelley, D. B.; Kells, W.; Kennedy, R.E.; Key, J. S.; Khalili, F. Y.; Khan, I.; Khan, Z.; Khazanov, E. A.; Kijbunchoo, N.; Kim, Chi-Woong; Kim, Chunglee; Kim, J.; Kim, K.; Kim, Namjun; Kim, W.; Kim, Y.M.; Kimbrell, S. J.; King, E. J.; King, P. J.; Kissel, J. S.; Klein, B.; Kleybolte, L.; Klimenko, S.; Koehlenbeck, S. M.; Koley, S.; Kondrashov, V.; Kontos, A.; Korobko, M.; Korth, W. Z.; Kowalska, I.; Kozak, D. B.; Kringel, V.; Krolak, A.; Krueger, C.; Kuehn, G.; Kumar, P.; Kumar, R.; Kuo, L.; Kutynia, A.; Lackey, B. D.; Landry, M.; Lange, J.; Lantz, B.; Lasky, P. D.; Laxen, M.; Lazzarini, A.; Lazzaro, C.; Leaci, P.; Leavey, S.; Lebigot, E. O.; Lee, C.H.; Lee, K.H.; Lee, M.H.; Lee, K.; Lenon, A.; Leonardi, M.; Leong, J. R.; Leroy, N.; Letendre, N.; Levin, Y.; Lewis, J. B.; Li, T. G. F.; Libson, A.; Littenberg, T. B.; Lockerbie, N. A.; Lombardi, A. L.; Lord, J. E.; Lorenzini, M.; Loriette, V.; Lormand, M.; Losurdo, G.; Lough, J. D.; Lueck, H.; Lundgren, A. P.; Lynch, R.; Ma, Y.; Machenschalk, B.; MacInnis, M.; Macleod, D. M.; Magana-Sandoval, F.; Zertuche, L. Magana; Magee, R. M.; Majorana, E.; Maksimovic, I.; Malvezzi, V.; Man, N.; Mandic, V.; Mangano, V.; Mansell, G. L.; Manske, M.; Mantovani, M.; Marchesoni, F.; Marion, F.; Marka, S.; Marka, Z.; Markosyan, A. S.; Maros, E.; Martelli, F.; Martellini, L.; Martin, I. W.; Martynov, D. V.; Marx, J. N.; Mason, K.; Masserot, A.; Massinger, T. J.; Masso-Reid, M.; Mastrogiovanni, S.; Matichard, F.; Matone, L.; Mavalvala, N.; Mazumder, N.; McCarthy, R.; McClelland, D. E.; McCormick, S.; McGuire, S. C.; McIntyre, G.; McIver, J.; McManus, D. J.; McRae, T.; McWilliams, S. T.; Meacher, D.; Meadors, G. D.; Meidam, J.; Melatos, A.; Mendell, G.; Mercer, R. A.; Merilh, E. L.; Merzougui, M.; Meshkov, S.; Messenger, C.; Messick, C.; Metzdorff, R.; Meyers, P. M.; Mezzani, F.; Miao, H.; Michel, C.; Middleton, H.; Mikhailov, E. E.; Milano, L.; Miller, A. L.; Miller, A. L.; Miller, B.; Miller, J.; Millhouse, M.; Minenkov, Y.; Ming, J.; Mirshekari, S.; Mishra, C.; Mitra, S.; Mitrofanov, V. P.; Mitselmakher, G.; Mittleman, R.; Moggi, A.; Mohan, M.; Mohapatra, S. R. P.; Montani, M.; Moore, B.C.; Moore, J.C.; Moraru, D.; Gutierrez Moreno, M.; Morriss, S. R.; Mossavi, K.; Mours, B.; Mow-Lowry, C. M.; Mueller, G.; Muir, A. W.; Mukherjee, Arunava; Mukherjee, S.D.; Mukherjee, S.; Mukund, N.; Mullavey, A.; Munch, J.; Murphy, D. J.; Murray, P.G.; Mytidis, A.; Nardecchia, I.; Naticchioni, L.; Nayak, R. K.; Nedkova, K.; Nelemans, G.; Nelson, T. J. N.; Gutierrez-Neri, M.; Neunzert, A.; Newton-Howes, G.; Nguyen, T. T.; Nielsen, A. B.; Nissanke, S.; Nitz, A.; Nocera, F.; Nolting, D.; Normandin, M. E. N.; Nuttall, L. K.; Oberling, J.; Ochsner, E.; O'Dell, J.; Oelker, E.; Ogin, G. H.; Oh, J.; Oh, S. H.; Ohme, F.; Oliver, M. B.; Oppermann, P.; Oram, Richard J.; O'Reilly, B.; O'Shaughnessy, R.; Ottaway, D. J.; Overmier, H.; Owen, B. J.; Pai, A.; Pai, S. A.; Palamos, J. R.; Palashov, O.; Palomba, C.; Pal-Singh, A.; Pan, H.; Pankow, C.; Pant, B. C.; Paoletti, F.; Paoli, A.; Papa, M. A.; Paris, H. R.; Parker, W.S; Pascucci, D.; Pasqualetti, A.; Passaquieti, R.; Passuello, D.; Patricelli, B.; Patrick, Z.; Pearlstone, B. L.; Pedraza, M.; Pedurand, R.; Pekowsky, L.; Pele, A.; Penn, S.; Perreca, A.; Perri, L. M.; Phelps, M.; Piccinni, O. J.; Pichot, M.; Piergiovanni, F.; Pierro, V.; Pillant, G.; Pinard, L.; Pinto, I. M.; Pitkin, M.; Poe, M.; Poggiani, R.; Popolizio, P.; Post, A.; Powell, J.; Prasad, J.; Predoi, V.; Prestegard, T.; Price, L. R.; Prijatelj, M.; Principe, M.; Privitera, S.; Prodi, G. A.; Prokhorov, L. G.; Puncken, O.; Punturo, M.; Puppo, P.; Puerrer, M.; Qi, H.; Qin, J.; Qiu, S.; Quetschke, V.; Quintero, E. A.; Quitzow-James, R.; Raab, F. J.; Rabeling, D. S.; Radkins, H.; Raffai, P.; Raja, S.; Rajan, C.; Rakhmanov, M.; Rapagnani, P.; Raymond, V.; Razzano, M.; Re, V.; Read, J.; Reed, C. M.; Regimbau, T.; Rei, L.; Reid, S.; Reitze, D. H.; Rew, H.; Reyes, S. D.; Ricci, F.; Riles, K.; Rizzo, D.M.; Robertson, N. A.; Robie, R.; Robinet, F.; Rocchi, A.; Rolland, L.; Rollins, J. G.; Roma, V. J.; Romano, J. D.; Romano, R.; Romanov, G.; Romie, J. H.; Rosinska, D.; Rowan, S.; Ruediger, A.; Ruggi, P.; Ryan, K.A.; Sachdev, P.S.; Sadecki, T.; Sadeghian, L.; Sakellariadou, M.; Salconi, L.; Saleem, M.; Salemi, F.; Samajdar, A.; Sammut, L.; Sanchez, E. J.; Sandberg, V.; Sandeen, B.; Sanders, J. R.; Sassolas, B.; Saulson, P. R.; Sauter, O. E. S.; Savage, R. L.; Sawadsky, A.; Schale, P.; Schilling, R.; Schmidt, J; Schmidt, P.; Schnabel, R.B.; Schofield, R. M. S.; Schoenbeck, A.; Schreiber, K.E.C.; Schuette, D.; Schutz, B. F.; Scott, J.; Scott, M.S.; Sellers, D.; Sengupta, A. S.; Sentenac, D.; Sequino, V.; Sergeev, A.; Setyawati, Y.; Shaddock, D. A.; Shaffer, T. J.; Shahriar, M. S.; Shaltev, M.; Shapiro, B.; Shawhan, P.; Sheperd, A.; Shoemaker, D. H.; Siellez, K.; Siemens, X.; Sieniawska, M.; Sigg, D.; Silva, António Dias da; Singer, A; Singer, L. P.; Singh, A.; Singh, R.; Singhal, A.; Sintes, A. M.; Slagmolen, B. J. J.; Smith, R. J. E.; Smith, N.D.; Smith, R. J. E.; Son, E. J.; Sorazu, B.; Sorrentino, F.; Souradeep, T.; Srivastava, A. K.; Staley, A.; Steinke, M.; Steinlechner, J.; Steinlechner, S.; Steinmeyer, D.; Stephens, B. C.; Stone, J.R.; Strain, K. A.; Straniero, N.; Stratta, G.; Strauss, N. A.; Strigin, S. E.; Sturani, R.; Stuver, A. L.; Summerscales, T. Z.; Sun, L.; Sunil, S.; Sutton, P. J.; Swinkels, B. L.; Szczepanczyk, M. J.; Tacca, M.D.; Talukder, D.; Tanner, D. B.; Tapai, M.; Tarabrin, S. P.; Taracchini, A.; Taylor, W.R.; Theeg, T.; Thirugnanasambandam, M. P.; Thomas, E. G.; Thomas, M.; Thomas, P.; Thorne, K. A.; Thorne, K. S.; Thrane, E.; Tiwari, S.; Tiwari, V.; Tokmakov, K. V.; Toland, K.; Tomlinson, C.; Tonelli, M.; Tornasi, Z.; Torres, C. V.; Torrie, C. I.; Toyra, D.; Travasso, F.; Traylor, G.; Trifiro, D.; Tringali, M. C.; Trozzo, L.; Tse, M.; Turconi, M.; Tuyenbayev, D.; Ugolini, D.; Unnikrishnan, C. S.; Urban, A. L.; Usman, S. A.; Vahlbruch, H.; Vajente, G.; Valdes, G.; van Bakel, N.; Van Beuzekom, Martin; van den Brand, J. F. J.; Van Den Broeck, C.F.F.; Vander-Hyde, D. C.; van der Schaaf, L.; van Heijningen, J. V.; van Veggel, A. A.; Vardaro, M.; Vass, S.; Vasuth, M.; Vaulin, R.; Vecchio, A.; Vedovato, G.; Veitch, J.; Veitch, P.J.; Venkateswara, K.; Verkindt, D.; Vetrano, F.; Vicere, A.; Vinciguerra, S.; Vine, D. J.; Vinet, J. -Y.; Vitale, S.; Vo, T.; Vocca, H.; Vorvick, C.; Voss, D. V.; Vousden, W. D.; Vyatchanin, S. P.; Wade, A. R.; Wade, L. E.; Wade, MT; Walker, M.; Wallace, L.; Walsh, S.; Wang, G.; Wang, H.; Wang, M.; Wang, X.; Wang, Y.; Ward, R. L.; Warner, J.; Was, M.; Weaver, B.; Wei, L. -W.; Weinert, M.; Weinstein, A. J.; Weiss, R.; Wen, L.M.; Wessels, P.; Westphal, T.; Wette, K.; Whelan, J. T.; Whiting, B. F.; Williams, D.R.; Williamson, A. R.; Willis, J. L.; Willke, B.; Wimmer, M. H.; Winkler, W.; Wipf, C. C.; Wittel, H.; Woan, G.; Woehler, J.; Worden, J.; Wright, J.L.; Wu, D.S.; Wu, G.; Yablon, J.; Yam, W.; Yamamoto, H.; Yancey, C. C.; Yu, H.; Yvert, M.; Zadrozny, A.; Zangrando, L.; Zanolin, M.; Zendri, J. -P.; Zevin, M.; Zhang, L.; Zhang, M.; Zhang, Y.; Zhao, C.; Zhou, M.; Zhou, Z.; Zhu, X. J.; Zucker, M. E.; Zuraw, S. E.; Zweizig, J.; Boyle, M.; Campanelli, M.; Chu, I.W.T.; Clark, M.; Fauchon-Jones, E. J.; Fong, H.; Healy, J.; Hemberger, D.; Hinder, I.; Husa, S.; Kalaghati, C.; Khan., S.; Kidder, L. E.; Kinsey, M.; Laguna, P.; London, L. T.; Lousto, C. O.; Lovelace, G.; Ossokine, S.; Pannarale, F.; Pfeiffer, H. P.; Scheel, M.; Shoemaker, D. M.; Szilagyi, B.; Teukolsky, S.; Vinuales, A. Vano; Zlochower, Y.

    2016-01-01

    We compare GW150914 directly to simulations of coalescing binary black holes in full general relativity, including several performed specifically to reproduce this event. Our calculations go beyond existing semianalytic models, because for all simulations—including sources with two independent,

  9. GeneRecon Users' Manual — A coalescent based tool for fine-scale association mapping

    DEFF Research Database (Denmark)

    Mailund, T

    2006-01-01

    GeneRecon is a software package for linkage disequilibrium mapping using coalescent theory. It is based on Bayesian Markov-chain Monte Carlo (MCMC) method for fine-scale linkage-disequilibrium gene mapping using high-density marker maps. GeneRecon explicitly models the genealogy of a sample of th...

  10. Theoretical Coalescence: A Method to Develop Qualitative Theory: The Example of Enduring.

    Science.gov (United States)

    Morse, Janice M

    Qualitative research is frequently context bound, lacks generalizability, and is limited in scope. The purpose of this article was to describe a method, theoretical coalescence, that provides a strategy for analyzing complex, high-level concepts and for developing generalizable theory. Theoretical coalescence is a method of theoretical expansion, inductive inquiry, of theory development, that uses data (rather than themes, categories, and published extracts of data) as the primary source for analysis. Here, using the development of the lay concept of enduring as an example, I explore the scientific development of the concept in multiple settings over many projects and link it within the Praxis Theory of Suffering. As comprehension emerges when conducting theoretical coalescence, it is essential that raw data from various different situations be available for reinterpretation/reanalysis and comparison to identify the essential features of the concept. The concept is then reconstructed, with additional inquiry that builds description, and evidence is conducted and conceptualized to create a more expansive concept and theory. By utilizing apparently diverse data sets from different contexts that are linked by certain characteristics, the essential features of the concept emerge. Such inquiry is divergent and less bound by context yet purposeful, logical, and with significant pragmatic implications for practice in nursing and beyond our discipline. Theoretical coalescence is a means by which qualitative inquiry is broadened to make an impact, to accommodate new theoretical shifts and concepts, and to make qualitative research applied and accessible in new ways.

  11. Coalescence of two polarized photons with antiparallel momenta into one on an electron

    International Nuclear Information System (INIS)

    Galynskii, M.V.

    1989-01-01

    The matrix elements have been calculated for the coalescence of two photons with antiparallel momenta and equal frequencies into one on an electron. An explicit expression for the differential probability for the process, with allowance for the polarization of all the particles, has been obtained in the nonrelativistic approximation

  12. Neural Correlates of Visual Aesthetics - Beauty as the Coalescence of Stimulus and Internal State

    NARCIS (Netherlands)

    Jacobs, Richard H. A. H.; Renken, Remco; Cornelissen, Frans W.

    2012-01-01

    How do external stimuli and our internal state coalesce to create the distinctive aesthetic pleasures that give vibrance to human experience? Neuroaesthetics has so far focused on the neural correlates of observing beautiful stimuli compared to neutral or ugly stimuli, or on neural correlates of

  13. Vertical GaN Devices for Power Electronics in Extreme Environments

    Science.gov (United States)

    2016-03-31

    Vertical GaN Devices for Power Electronics in Extreme Environments Isik C. Kizilyalli (1), Robert J. Kaplar (2), O. Aktas (1), A. M. Armstrong (2...electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...discussed. Homoepitaxial MOCVD growth of GaN on its native substrate and being able to control doping has allowed the realization of vertical

  14. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  15. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  16. Phylogenetic analysis at deep timescales: unreliable gene trees, bypassed hidden support, and the coalescence/concatalescence conundrum.

    Science.gov (United States)

    Gatesy, John; Springer, Mark S

    2014-11-01

    Large datasets are required to solve difficult phylogenetic problems that are deep in the Tree of Life. Currently, two divergent systematic methods are commonly applied to such datasets: the traditional supermatrix approach (= concatenation) and "shortcut" coalescence (= coalescence methods wherein gene trees and the species tree are not co-estimated). When applied to ancient clades, these contrasting frameworks often produce congruent results, but in recent phylogenetic analyses of Placentalia (placental mammals), this is not the case. A recent series of papers has alternatively disputed and defended the utility of shortcut coalescence methods at deep phylogenetic scales. Here, we examine this exchange in the context of published phylogenomic data from Mammalia; in particular we explore two critical issues - the delimitation of data partitions ("genes") in coalescence analysis and hidden support that emerges with the combination of such partitions in phylogenetic studies. Hidden support - increased support for a clade in combined analysis of all data partitions relative to the support evident in separate analyses of the various data partitions, is a hallmark of the supermatrix approach and a primary rationale for concatenating all characters into a single matrix. In the most extreme cases of hidden support, relationships that are contradicted by all gene trees are supported when all of the genes are analyzed together. A valid fear is that shortcut coalescence methods might bypass or distort character support that is hidden in individual loci because small gene fragments are analyzed in isolation. Given the extensive systematic database for Mammalia, the assumptions and applicability of shortcut coalescence methods can be assessed with rigor to complement a small but growing body of simulation work that has directly compared these methods to concatenation. We document several remarkable cases of hidden support in both supermatrix and coalescence paradigms and argue

  17. Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

    2011-01-01

    We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

  18. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Science.gov (United States)

    Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-01-01

    For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100) and (111) are isotropic, while the Poisson’s ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap

  19. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  20. Optical properties of Mg doped p-type GaN nanowires

    Science.gov (United States)

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  1. The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    International Nuclear Information System (INIS)

    Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

    2013-01-01

    Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

  2. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Directory of Open Access Journals (Sweden)

    Hongbo Qin

    2017-12-01

    Full Text Available For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100 and (111 are isotropic, while the Poisson’s ratio at plane (110 exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger

  3. Direct growth of freestanding GaN on C-face SiC by HVPE.

    Science.gov (United States)

    Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

    2015-06-02

    In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

  4. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

    Science.gov (United States)

    Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-12-12

    For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol -1 K -1 , respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of

  5. Dislocation-induced nanoparticle decoration on a GaN nanowire.

    Science.gov (United States)

    Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

    2015-02-04

    GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

  6. Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.J. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering; Chen, X.L.; Tu, Q.Y.; Yang, Z.; Xu, Y.P.; Hu, B.Q. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Li, H.J. [Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering

    2001-05-01

    Low-dimensional GaN materials, including nanorings, nanoribbons and smooth nanowires have been synthesized by reacting gallium and ammonia using Ag particles as a catalyst on the substrate of MgO single crystals. They were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). EDX, XRD indicated that the low-dimensional nanomaterials were wurtzite GaN. New features are found in Raman scatterings for these low-dimensional GaN materials, which are different from the previous observations of GaN materials. (orig.)

  7. Optical and field emission properties of layer-structure GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Zhen [Science School, Xi’an University of Technology, Xi’an 710048 (China); School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 (China); Li, Enling, E-mail: Lienling@xaut.edu.cn [Science School, Xi’an University of Technology, Xi’an 710048 (China); Shi, Wei; Ma, Deming [Science School, Xi’an University of Technology, Xi’an 710048 (China)

    2014-08-15

    Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

  8. Site-selective spectroscopy of Er in GaN

    International Nuclear Information System (INIS)

    Dierolf, V.; Sandmann, C.; Zavada, J.; Chow, P.; Hertog, B.

    2004-01-01

    We investigated different Er 3+ defect sites found in Er-doped GaN layers by site-selective combined excitation-emission spectroscopy and studied the role of these sites in different direct and multistep excitation schemes. The layers were grown by molecular beam epitaxy and were 200 nm thick. Two majority sites were found along with several minority sites. The sites strongly differ in excitation and energy transfer efficiencies as well as branching ratios during relaxation. For this reason, relative emission intensities from these sites depend strongly on emission and excitation. The sites were identified for several transitions and a comprehensive list of energy levels has been compiled. One of the minority sites appears strongly under ultraviolet excitation above the GaN band gap suggesting that this site is an excellent trap for excitation energy of electron-hole pairs

  9. Study of Charge Carrier Transport in GaN Sensors

    Science.gov (United States)

    Gaubas, Eugenijus; Ceponis, Tomas; Kuokstis, Edmundas; Meskauskaite, Dovile; Pavlov, Jevgenij; Reklaitis, Ignas

    2016-01-01

    Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects. PMID:28773418

  10. Structural and Magnetic Properties of Sm Implanted GaN

    International Nuclear Information System (INIS)

    Li-Juan, Jiang; Xiao-Liang, Wang; Hong-Ling, Xiao; Zhan-Guo, Wang; Chun, Feng; Ming-Lan, Zhang; Jian, Tang

    2009-01-01

    The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005)037205, Phys. Rev. B 72(2005)245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

  11. Electron beam irradiation effect on GaN HEMT

    International Nuclear Information System (INIS)

    Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

    2011-01-01

    In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

  12. Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

    KAUST Repository

    Das, Ayan

    2011-08-01

    We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.

  13. High sensitivity hydrogen sensors based on GaN

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan; Žďánský, Karel

    2012-01-01

    Roč. 7, č. 9 (2012), s. 1661-1663 ISSN 1610-1642. [16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). Stockholm, 19.06.2011-23.06.2011] R&D Projects: GA MŠk(CZ) OC10021 Institutional support: RVO:67985882 Keywords : Pt nanoparticles * Graphite based Schottky diodes * Hydrogen sensor * GaN Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  14. Investigation on the Solubility of GaN in Supercritical Ammonia Containing Acidic, Neutral, and Some Basic Mineralizers

    National Research Council Canada - National Science Library

    Ehrentraut, Dirk

    2009-01-01

    ... material due to the superior structural quality over HVPE GaN. In order to hold up with the progress, not at least provide a scientific platform, the solubility of GaN in supercritical ammonia (NH3...

  15. Eu{sup 3+} activated GaN thin films grown on sapphire by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Perea-Lopez, Nestor; Tao, Jonathan H. [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); McKittrick, Joanna [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); Department of Mechanical and Aerospace Engineering, University of California at San Diego, La Jolla, CA 92093 (United States); Talbot, Jan B. [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); Department of Nanoengineering, University of California at San Diego, La Jolla, CA 92093 (United States); Raukas, M.; Laski, J.; Mishra, K.C. [OSRAM SYLVANIA Central Research, Beverly, MA 01915-1068 (United States); Hirata, Gustavo [CCMC-UNAM, Km. 107 Carretera Tijuana-Ensenada, C. P. 22800 Ensenada Baja California (Mexico)

    2008-07-01

    By means of pulsed laser deposition, polycrystalline thin films of GaN doped with Eu{sup 3+} were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga{sub 2}O{sub 3} and Eu{sub 2}O{sub 3} were dissolved in nitric acid, which produces Ga{sub (1-x)}Eu{sub x} (NO{sub 3}){sub 3}. Next, the nitrates were oxidized in a tubular furnace with O{sub 2} flow forming Ga{sub 2(1-x)}Eu{sub 2x}O{sub 3}. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga{sub (1-x)}Eu{sub x}N. Film growth was done in a stainless steel vacuum chamber partially filled with N{sub 2} (400 mTorr). For the deposit, the 3{sup rd} harmonic of a Nd:YAG laser ({lambda}=355 nm) was focused on the surface of the target. After deposition, annealing in NH{sub 3} was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

    Science.gov (United States)

    Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

    2018-05-01

    Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

  17. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

    Science.gov (United States)

    Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

    2017-11-08

    Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

  18. Metal contacts on ZnSe and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Duxstad, Kristin Joy [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  19. Dopant Adsorption and Incorporation at Irradiated GaN Surfaces

    Science.gov (United States)

    Sun, Qiang; Selloni, Annabella; Myers, Thomas; Doolittle, W. Alan

    2006-03-01

    Mg and O are two of the common dopants in GaN, but, in spite of extensive investigation, the atomic scale understanding of their adsorption and incorporation is still incomplete. In particular, high-energy electron irradiation, such as occurring during RHEED, has been reported to have an important effect on the incorporation of these impurities, but no study has addressed the detailed mechanisms of this effect yet. Here we use DFT calculations to study the adsorption and incorporation of Mg and O at the Ga- and N-polar GaN surfaces under various Ga, Mg and O coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find that the adsorption and incorporation of the two impurities have opposite surface polarity dependence: substitutional Mg prefers to incorporate at the GaN(0001) surface, while O prefers to adsorb and incorporate at the N-polar surface. In addition, our results indicate that in presence of light irradiation the tendency of Mg to surface-segregate is reduced. The O adsorption energy on the N-polar surface is also significantly reduced, consistent with the experimental observation of a much smaller concentration of oxygen in the irradiated samples.

  20. Rare earth point defects in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Sanna, S.

    2007-12-14

    In this work we investigate rare earth doped GaN, by means of theoretical simulations. The huge unit cells necessary to model the experimental system, where dilute amount of rare earth ions are used, are handled with the charge self consistent density-functional based-tight binding (SCC-DFTB) calculational scheme. The method has been extended to include LDA+U and simplified self interaction corrected (SIC)-like potentials for the simulation of systems with localised and strongly correlated electrons. A set of tight-binding parameters has been created to model the interaction of GaN with some dopants, including a selection of lanthanide ions interesting due to their optical or magnetic properties (Pr, Eu, Gd, Er and Tm). The f-electrons were treated as valence electrons. A qualitatively correct description of the band gap is crucial for the simulation of rare earth doped GaN, because the luminescence intensity of the implanted samples depends on the size of the host band gap and because the rare earths could introduce charge transition levels near the conduction band. In this work these levels are calculated with the Slater-Janak (SJ) transition state model, which allows an approximate calculation of the charge transition levels by analysing the Kohn-Sham eigenvalues of the DFT. (orig.)

  1. Dislocation core structures in Si-doped GaN

    International Nuclear Information System (INIS)

    Rhode, S. L.; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-01-01

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10 8  and (10 ± 1) × 10 9  cm −2 . All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN

  2. Dislocation core structures in Si-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rhode, S. L., E-mail: srhode@imperial.ac.uk; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  3. Radiation sensors based on GaN microwires

    Science.gov (United States)

    Verheij, D.; Peres, M.; Cardoso, S.; Alves, L. C.; Alves, E.; Durand, C.; Eymery, J.; Lorenz, K.

    2018-05-01

    GaN microwires were shown to possess promising characteristics as building blocks for radiation resistant particle detectors. They were grown by metal organic vapour phase epitaxy with diameters between 1 and 2 μm and lengths around 20 μm. Devices were fabricated by depositing gold contacts at the extremities of the wires using photolithography. The response of these single wire radiation sensors was then studied under irradiation with 2 MeV protons. Severe degradation of the majority of devices only sets in for fluences above protons cm‑2 revealing good radiation resistance. During proton irradiation, a clear albeit small current gain was observed with a corresponding decay time below 1 s. Photoconductivity measurements upon irradiation with UV light were carried out before and after the proton irradiation. Despite a relatively low gain, attributed to significant dark currents caused by a high dopant concentration, fast response times of a few seconds were achieved comparable to state-of-the-art GaN nanowire photodetectors. Irradiation and subsequent annealing resulted in an overall improvement of the devices regarding their response to UV radiation. The photocurrent gain increased compared to the values that were obtained prior to the irradiation, without compromising the decay times. The results indicate the possibility of using GaN microwires not only as UV detectors, but also as particle detectors.

  4. High temperature refractive indices of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.; Stepanov, S.; Gott, A.; Shields, P.A.; Zhirnov, E.; Wang, W.N. [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom); Steimetz, E.; Zettler, J.T. [LayTec, Helmholtzstr. 13-14, 10587 Berlin (Germany)

    2006-06-15

    Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 C were obtained in a spectral range from 370-900 nm. A peak at 412{+-}5 nm in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Shear-induced Bubble Coalescence in Rhyolitic Melts with Low Vesicularity

    Science.gov (United States)

    Okumura, S.; Nakamura, M.; Tsuchiyama, A.

    2006-12-01

    Development of bubble structure during magma ascent controls the dynamics of volcanic eruption, because the bubble structure influences the magma rheology and permeability, and hence magma degassing. In the flowing magmas, the bubble structure is expected to be changed by shear, as pointed out by some previous studies based on geological observations. However, the development of bubble structure has been experimentally studied only in the isostatic magmas. We have experimentally demonstrated for the first time, the shear-induced development of number density, size and shape of bubbles in a rhyolitic melt. The deformation experiments were performed by using an externally heated, piston-cylinder type apparatus with a rotational piston. At 975°C, natural obsidian (initial water content of 0.5 wt%) having cylindrical shape (ca. 4.7 mm in diameter and 5 mm in length) was vesiculated in the graphite container (ca. 5 and 9 mm in the inner and the outer diameters, respectively, and 5 mm in length), and the vesiculated samples were twisted at various rotational speeds up to 1 rpm. The number density, size and shape of bubbles in the quenched samples were then measured by using the X-ray computed tomography. The size distribution of bubbles shows that the number of larger bubbles increases with the rotational speed and at the outer zone of the samples at which the shear rate is high. In the high shear rate zone, the magnitude of bubble deformation is large. The 3D images of large bubbles clearly indicate that they were formed by coalescence. These results indicate that the degree of bubble coalescence is enhanced with the shear rate. The experimental results also demonstrated that the coalescence of bubbles occur even at low vesicularity (ca. 20 vol.%). Because the shear rate induced in this study (in the order of 0.01 1/s) seems to be produced for magmas ascending in a volcanic conduit, we propose the possibility that the vesiculated magmas undergo bubble coalescence at a

  6. Simulations of plasma heating caused by the coalescence of multiple current loops in a proton-boron fusion plasma

    International Nuclear Information System (INIS)

    Haruki, T.; Yousefi, H. R.; Sakai, J.-I.

    2010-01-01

    Two dimensional particle-in-cell simulations of a dense plasma focus were performed to investigate a plasma heating process caused by the coalescence of multiple current loops in a proton-boron-electron plasma. Recently, it was reported that the electric field produced during the coalescence of two current loops in a proton-boron-electron plasma heats up all plasma species; proton-boron nuclear fusion may therefore be achievable using a dense plasma focus device. Based on this work, the coalescence process for four and eight current loops was investigated. It was found that the return current plays an important role in both the current pinch and the plasma heating. The coalescence of four current loops led to the breakup of the return current from the pinched plasma, resulting in plasma heating. For the coalescence of eight current loops, the plasma was confined by the pinch but the plasma heating was smaller than the two and four loop cases. Therefore the heating associated with current loop coalescence depends on the number of initial current loops. These results are useful for understanding the coalescence of multiple current loops in a proton-boron-electron plasma.

  7. Control of strain in GaN by a combination of H2 and N2 carrier gases

    International Nuclear Information System (INIS)

    Yamaguchi, Shigeo; Kariya, Michihiko; Kosaki, Masayoshi; Yukawa, Yohei; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu

    2001-01-01

    We study the effect of a combination of N 2 and H 2 carrier gases on the residual strain and crystalline properties of GaN, and we propose its application to the improvement of crystalline quality of GaN/Al 0.17 Ga 0.83 N multiple quantum well (MQW) structures. GaN was grown with H 2 or N 2 carrier gas (H 2 - or N 2 - GaN) on an AlN low-temperature-deposited buffer layer. A (0001) sapphire substrate was used. N 2 - GaN was grown on H 2 - GaN. The total thickness was set to be 1.5 μm, and the ratio of N 2 - GaN thickness to the total thickness, x, ranged from 0 to 1. With increasing x, the tensile stress in GaN increased. Photoluminescence intensity at room temperature was much enhanced. Moreover, the crystalline quality of GaN/Al 0.17 Ga 0.83 N MQW was much higher when the MQW was grown with N 2 on H 2 - GaN than when it was grown with H 2 on H 2 - GaN. These results were due to the achievement of control of strain in GaN using a combination of N 2 - GaN and H 2 - GaN. [copyright] 2001 American Institute of Physics

  8. Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching

    KAUST Repository

    Najar, Adel; Shafa, Muhammad; Anjum, Dalaver H.

    2017-01-01

    Herein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density

  9. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

    Science.gov (United States)

    Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

    2017-10-01

    Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Magnetic neutral point stretching and coalescence in tearing-generated magnetohydrodynamic structures

    International Nuclear Information System (INIS)

    Malara, F.; Veltri, P.; Carbone, V.

    1991-01-01

    The time evolution of the instability of a sheet pinch is numerically studied using a sufficiently high ratio of system length to width in order to allow the simultaneous growth of several unstable wavelengths. This numerical simulation provides new insights into the nonlinear development of the tearing instability. Before the instability saturates, the nonlinear interactions among the unstable modes produce local coalescence phenomena that destroy the weaker current pinches and reduce the number of magnetic islands. In contrast with the usual picture, this coalescence is not due to the attraction between the current maxima, but is due to the stretching of the X-neutral points associated with the most intense current pinches. The global perturbation growth rate remains essentially unchanged in time, being of the order of the resistive instability growth rate

  11. Hydrogen-induced crack interaction and coalescence: the role of local crystallographic texture

    Energy Technology Data Exchange (ETDEWEB)

    Caleyo, F.; Hallen, J. M.; Venegas, V. [ESIQIE, Instituto Politecnico Nacional, Mexico, (Mexico); Baudin, T. [Universite de Paris Sud, Orsay, (France)

    2010-07-01

    Hydrogen induced cracking (HIC) is a big concern in pipeline industry specialized in sour service. The strategies to improve HIC resistance of pipeline steel have not been completely efficient. This study investigated the role of grain orientation in the interaction and coalescence of non-coplanar HIC cracks through experimental analysis. HIC samples of pipeline steels (API 5L X46 and ASME-A106) were studied using automated electron backscatter diffraction (EBSD) and orientation imaging microscopy (OIM). The results showed that the microtexture can play a significant role in the coalescence of closely spaced non-coplanar HIC cracks. It was also found that the presence of cleavage planes and slip systems correctly oriented to the mixed-mode stresses can activate low-resistance transgranular paths along in which cracks can merge. It is demonstrated that crystallographic texture must be considered in developing predictive models for the study of the stepwise propagation of HIC cracking in pipeline steels.

  12. Coalescence collision of liquid drops I: Off-center collisions of equal-size drops

    Directory of Open Access Journals (Sweden)

    Alejandro Acevedo-Malavé

    2011-09-01

    Full Text Available The Smoothed Particle Hydrodynamics method (SPH is used here to model off-center collisions of equal-size liquid drops in a three-dimensional space. In this study the Weber number is calculated for several conditions of the droplets dynamics and the velocity vector fields formed inside the drops during the collision process are shown. For the permanent coalescence the evolution of the kinetic and internal energy is shown and also the approaching to equilibrium of the resulting drop. Depending of the Weber number three possible outcomes for the collision of droplets is obtained: permanent coalescence, flocculation and fragmentation. The fragmentation phenomena are modeled and the formation of small satellite drops can be seen. The ligament that is formed follows the “end pinching” mechanism and it is transformed into a flat structure.

  13. Strange and heavy hadrons production from coalescence plus fragmentation in AA collisions at RHIC and LHC

    Science.gov (United States)

    Plumari, Salvatore; Minissale, Vincenzo; Das, Santosh K.; Scardina, Francesco; Greco, Vincenzo

    2018-02-01

    In a coalescence plus fragmentation approach we study the pT spectra of charmed hadrons D0, Ds up to about 10 GeV and the Λ+c /D0 ratio from RHIC to LHC energies. In this study we have included the contribution from decays of heavy hadron resonances and also that due to fragmentation of heavy quarks that are left in the system after coalescence. The pT dependence of the heavy baryon/meson ratios is found to be sensitive to the heavy quark mass. In particular we found that the Λc/D0 is much flatter than the one for light baryon/meson ratio like p/π and Λ/K.

  14. Failure by void coalescence in metallic materials containing primary and secondary voids subject to intense shearing

    DEFF Research Database (Denmark)

    Nielsen, Kim Lau; Tvergaard, Viggo

    2011-01-01

    Failure under intense shearing at close to zero stress triaxiality is widely observed for ductile metallic materials, and is identified in experiments as smeared-out dimples on the fracture surface. Numerical cell-model studies of equal sized voids have revealed that the mechanism governing...... this shear failure mode boils down to the interaction between primary voids which rotate and elongate until coalescence occurs under severe plastic deformation of the internal ligaments. The objective of this paper is to analyze this failure mechanism of primary voids and to study the effect of smaller...... secondary damage that co-exists with or nucleation in the ligaments between larger voids that coalesce during intense shearing. A numerical cell-model study is carried out to gain a parametric understanding of the overall material response for different initial conditions of the two void populations...

  15. Observation of Coalescence Process of Silver Nanospheres During Shape Transformation to Nanoprisms

    Directory of Open Access Journals (Sweden)

    Yu Pyng

    2011-01-01

    Full Text Available Abstract In this report, we observed the growth mechanism and the shape transformation from spherical nanoparticles (diameter ~6 nm to triangular nanoprisms (bisector length ~100 nm. We used a simple direct chemical reduction method and provided evidences for the growth of silver nanoprisms via a coalescence process. Unlike previous reports, our method does not rely upon light, heat, or strong oxidant for the shape transformation. This transformation could be launched by fine-tuning the pH value of the silver colloidal solution. Based on our extensive examination using transmission electron microscopy, we propose a non-point initiated growth mechanism, which is a combination of coalescence and dissolution–recrystallization process during the growth of silver nanoprisms.

  16. Search for gravitational waves from primordial black hole binary coalescences in the galactic halo

    International Nuclear Information System (INIS)

    Abbott, B.; Anderson, S.B.; Araya, M.; Armandula, H.; Asiri, F.; Barish, B.C.; Barnes, M.; Barton, M.A.; Bhawal, B.; Billingsley, G.; Black, E.; Blackburn, K.; Bogue, L.; Bork, R.; Brown, D.A.; Busby, D.; Cardenas, L.; Chandler, A.; Chapsky, J.; Charlton, P.

    2005-01-01

    We use data from the second science run of the LIGO gravitational-wave detectors to search for the gravitational waves from primordial black hole binary coalescence with component masses in the range 0.2-1.0M · . The analysis requires a signal to be found in the data from both LIGO observatories, according to a set of coincidence criteria. No inspiral signals were found. Assuming a spherical halo with core radius 5 kpc extending to 50 kpc containing nonspinning black holes with masses in the range 0.2-1.0M · , we place an observational upper limit on the rate of primordial black hole coalescence of 63 per year per Milky Way halo (MWH) with 90% confidence

  17. GW170817: Implications for the Stochastic Gravitational-Wave Backgroud from Compact Binary Coalescences

    OpenAIRE

    Abbott, B. P.; Abbott, R.; Adhikari, R. X.; Ananyeva, A.; Anderson, S. B.; Appert, S.; Arai, K.; Araya, M. C.; Barayoga, J. C.; Barish, B. C.; Berger, B. K.; Billingsley, G.; Biscans, S.; Blackburn, J. K.; Blair, C. D.

    2018-01-01

    The LIGO Scientific and Virgo Collaborations have announced the event GW170817, the first detection of gravitational waves from the coalescence of two neutron stars. The merger rate of binary neutron stars estimated from this event suggests that distant, unresolvable binary neutron stars create a significant astrophysical stochastic gravitational-wave background. The binary neutron star component will add to the contribution from binary black holes, increasing the amplitude of the total astro...

  18. Impact of 50% Synthesized Iso-Paraffins (SIP) on F-76 Fuel Coalescence

    Science.gov (United States)

    2013-12-16

    petroleum JP-5 and Synthesized Iso-Paraffins (SIP). SIP fuels are made from direct fermentation of sugar into olefinic hydrocarbons. The olefinic...manufactured scaled down filter/coalescer and separator to simulate the performance of a full-scale filter separator system. This test is designed to predict...5 and Synthesized Iso-Paraffins (SIP). SIP fuels are made from direct fermentation of sugar into olefinic hydrocarbons. The olefinic hydrocarbons

  19. Development and validation of models for bubble coalescence and breakup. Final report

    International Nuclear Information System (INIS)

    Liao, Y.; Lucas, D.

    2013-02-01

    A new generalized model for bubble coalescence and breakup has been developed. It is based on physical considerations and takes into account various mechanisms that can lead to bubble coalescence and breakup. First, in a detailed literature review, the available models were compiled and analyzed. It turned out that many of them show a contradictory behaviour. None of these models allows the prediction of the evolution of bubble size distributions along a pipe flow for a wide range of combinations of flow rates of the gas and the liquid phase. The new model has been extensively studied in a simplified Test-Solver. Although this does not cover all details of a developing flow along the pipe, it allows - in contrast to a CFD code - to conduct a large number of variational calculations to investigate the influence of individual sizes and models. Coalescence and breakup cannot be considered separately from other phenomena and models that reflect these phenomena. There are close interactions with the turbulence of the liquid phase and the momentum exchange between phases. Since the dissipation rate of turbulent kinetic energy is a direct input parameter for the new model, the turbulence modelling has been studied very carefully. To validate the model, a special experimental series for air-water flows was used, conducted at the TOPFLOW facility in an 8-meter long DN200 pipe. The data are characterized by high quality and were produced within the TOPFLOW-II project. The test series aims to provide a basis for the work presented here. Predicting the evolution of the bubble size distribution along the pipe could be improved significantly in comparison to the previous standard models for bubble coalescence and breakup implemented in CFX. However some quantitative discrepancies remain. The full model equations as well as an implementation as ''User-FORTRAN'' in CFX are available and can be used for further work on the simulation of poly-disperse bubbly flows.

  20. Coalescence of 3-phenyl-propynenitrile on Cu(111) into interlocking pinwheel chains

    Science.gov (United States)

    Luo, Miaomiao; Lu, Wenhao; Kim, Daeho; Chu, Eric; Wyrick, Jon; Holzke, Connor; Salib, Daniel; Cohen, Kamelia D.; Cheng, Zhihai; Sun, Dezheng; Zhu, Yeming; Einstein, T. L.; Bartels, Ludwig

    2011-10-01

    3-phenyl-propynenitrile (PPN) adsorbs on Cu(111) in a hexagonal network of molecular trimers formed through intermolecular interaction of the cyano group of one molecule with the aromatic ring of its neighbor. Heptamers of trimers coalesce into interlocking pinwheel-shaped structures that, by percolating across islands of the original trimer coverage, create the appearance of gear chains. Density functional theory aids in identifying substrate stress associated with the chemisorption of PPN's acetylene group as the cause of this transition.

  1. Proposal of a calculation methodology for the preliminary design of a coalescing filter

    International Nuclear Information System (INIS)

    Gonzalez Dobrosky, Cintia

    2015-01-01

    Coalescing filters are described which are equipments for capture and recovery of mist most efficient, inexpensive and have fewer limitations of application. The operation, equations and ideal characteristics of filter media of these models are explained. A methodology for design and scale-up of this type of equipment for liquid recovery in gaseous currents is proposed from experimental tests, in order to guide the interested reader in its making. (author) [es

  2. Performance comparison of multi-detector detection statistics in targeted compact binary coalescence GW search

    OpenAIRE

    Haris, K; Pai, Archana

    2016-01-01

    Global network of advanced Interferometric gravitational wave (GW) detectors are expected to be on-line soon. Coherent observation of GW from a distant compact binary coalescence (CBC) with a network of interferometers located in different continents give crucial information about the source such as source location and polarization information. In this paper we compare different multi-detector network detection statistics for CBC search. In maximum likelihood ratio (MLR) based detection appro...

  3. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

  4. Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN

    International Nuclear Information System (INIS)

    Zhang, Yong; Li, Feng

    2017-01-01

    The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.

  5. Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

    International Nuclear Information System (INIS)

    Cheah, S.F.; Lee, S.C.; Ng, S.S.; Yam, F.K.; Abu Hassan, H.; Hassan, Z.

    2015-01-01

    Porous gallium nitride (GaN) thin films with different surface morphologies and free carriers properties were fabricated from Si-doped GaN thin films using ultra-violet assisted electrochemical etching approach under various etching voltages. Fluctuation of luminescence signals was observed in the photoluminescence spectra of porous GaN thin films. Taking advantage of the spectral sensitivity of infrared attenuated total reflection spectroscopy on semiconductor materials, roles of free carriers and porous structure in controlling luminescence properties of GaN were investigated thoroughly. The results revealed that enhancement in luminescence signal is not always attained upon porosification. Although porosification is correlated to the luminescence enhancement, however, free carrier is the primary factor to enhance luminescence intensity. Due to unavoidable significant reduction of free carriers from Si-doped GaN in the porosification process, control of etching depth (i.e., thickness of porous layer formed from the Si-doped layer) is critical in fabricating porous GaN thin film with enhanced luminescence response. - Highlights: • Various pore morphologies with free carrier properties are produced by Si-doped GaN. • Free carriers are important to control the luminescence signal of porous GaN. • Enhancement of luminescence signal relies on the pore depth of Si-doped layer

  6. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

    International Nuclear Information System (INIS)

    Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

    2014-01-01

    Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

  7. Structural effects of field emission from GaN nanofilms on SiC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng-Cheng; Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn; Zhu, Man-Kang; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing 100124 (China); Liu, Peng [Department of Physics Tsinghua University, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084 (China); Wang, Bi-Ben [College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054 (China)

    2014-04-21

    GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.

  8. GaN and LED structures grown on pre-patterned silicon pillar arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Merzsch, Stephan; Neumann, Richard; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvoigteiplatz 5-7, 10117 Berlin (Germany)

    2010-01-15

    GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self-assembled growth of GaN nanorods, we performed GaN nanorod growth by pre-patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo-temperature inductively-coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal-organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Wang, Xue; Erenburg, Milena; Al-Suleiman, Mohamed Aid Mansur; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Bergbauer, Werner [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Strassburg, Martin [Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

    2011-07-15

    Selective area growth of GaN nanorods by metalorganic vapor phase epitaxy is highly demanding for novel applications in nano-optoelectronic and nanophotonics. Recently, we report the successful selective area growth of GaN nanorods in a continuous-flow mode. In this work, as examples, we show the morphology dependence of GaN rods with {mu}m or sub-{mu}m in diameters on growth conditions. Firstly, we found that the nitridation time is critical for the growth, with an optimum from 90 to 180 seconds. This leads to more homogeneous N-polar GaN rods growth. A higher temperature during GaN rod growth tends to increase the aspect ratio of the GaN rods. This is due to the enhanced surface diffusion of growth species. The V/III ratio is also an important parameter for the GaN rod growth. Its increase causes reduction of the aspect ratio of GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface than it on {l_brace}1-100{r_brace} m-planes by supplying more NH{sub 3} (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination

    Science.gov (United States)

    2016-06-01

    Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination Distribution Statement A. Approved for public release; distribution is...Final Technical Report BRBAA08-Per5-Y-1-2-0030 Title: “Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination ” Grant...Analysis  .............................................................................................  23   6.   Gamma-ray Discrimination

  11. TEM characterization of catalyst- and mask-free grown GaN nanorods

    International Nuclear Information System (INIS)

    Schowalter, M; Aschenbrenner, T; Kruse, C; Hommel, D; Rosenauer, A

    2010-01-01

    Catalyst- and mask-free grown GaN nanorods have been investigated using transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy filtered transmission electron microscopy (EFTEM). The nanorods were grown on nitridated r-plane sapphire substrates in a molecular beam epitaxy reactor. We investigated samples directly after the nitridation and after the overgrowth of the structure with GaN. High resolution transmission electron microscopy (HRTEM) and EFTEM revealed that AlN islands have formed due to nitridation. After overgrowth, the AlN islands could not be observed any more, neither by EFTEM nor by Z-contrast imaging. Instead, a smooth layer consisting of AlGaN was found. The investigation of the overgrown sample revealed that an a-plane GaN layer and GaN nanorods on top of the a-plane GaN have formed. The nanorods reduced from top of the a-plane GaN towards the a-plane GaN/sapphire interface suggesting that the nanorods originate at the AlN islands found after nitridation. However, this could not be shown unambiguously. The number of threading dislocations in the nanorods was very low. The analysis of the epitaxial relationship to the a-plane GaN showed that the nanorods grew along the [000-1] direction, and the [1-100] direction of the rods was parallel to the [0001] direction of the a-plane GaN.

  12. Electronic and Optical Properties of Two-Dimensional GaN from First-Principles.

    Science.gov (United States)

    Sanders, Nocona; Bayerl, Dylan; Shi, Guangsha; Mengle, Kelsey A; Kioupakis, Emmanouil

    2017-12-13

    Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

  13. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  14. The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

    Science.gov (United States)

    Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo

    2017-08-17

    We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.

  15. The dynamics of slug trains in volcanic conduits: Evidence for expansion driven slug coalescence

    Science.gov (United States)

    Pering, T. D.; McGonigle, A. J. S.; James, M. R.; Capponi, A.; Lane, S. J.; Tamburello, G.; Aiuppa, A.

    2017-12-01

    Strombolian volcanism is a ubiquitous form of activity, driven by the ascent and bursting of bubbles of slug morphology. Whilst considerable attention has been devoted to understanding the behaviour of individual slugs in this regime, relatively little is known about how inter-slug interactions modify flow conditions. Recently, we reported on high temporal frequency strombolian activity on Etna, in which the larger erupted slug masses were followed by longer intervals before the following explosion than the smaller bursts (Pering et al., 2015). We hypothesised that this behaviour arose from the coalescence of ascending slugs causing a prolonged lag before arrival of the next distinct bubble. Here we consider the potential importance of inter-slug interactions for the dynamics of strombolian volcanism, by reporting on the first study into the behaviour of trains of ascending gas slugs, scaled to the expansion rates in volcanic conduits. This laboratory analogue study illustrates that slugs in trains rise faster than individual slugs, and can be associated with aspects of co-current flow. The work also highlights that coalescence and inter-slug interactions play an important role in modulating slug train behaviour. We also report, for the first time, on slug coalescence driven by vertical expansion of the trailing slug, a process which can occur, even where the leading slug base ascent velocity is greater than that of the trailing slug.

  16. Prediction of crack coalescence of steam generator tubes in nuclear power plants

    International Nuclear Information System (INIS)

    Abou-Hanna, Jeries; McGreevy, Timothy E.; Majumdar, Saurin

    2004-01-01

    Prediction of failure pressures of cracked steam generator tubes of nuclear power plants is an important ingredient in scheduling inspection and repair of tubes. Prediction is usually based on nondestructive evaluation (NDE) of cracks. NDE often reveals two neighboring cracks. If the cracks interact, the tube pressure under which the ligament between the two cracks fails could be much lower than the critical burst pressure of an individual equivalent crack. The ability to accurately predict the ligament failure pressure, called ''coalescence pressure,'' is important. The failure criterion was established by nonlinear finite element model (FEM) analyses of coalescence of two 100% through-wall collinear cracks. The ligament failure is precipitated by local instability of the ligament under plane strain conditions. As a result of this local instability, the ligament thickness in the radial direction decreases abruptly with pressure. Good correlation of FEM analysis results with experimental data obtained at Argonne National Laboratory's Energy Technology Division demonstrated that nonlinear FEM analyses are capable of predicting the coalescence pressure accurately for 100% through-wall cracks. This failure criterion and FEA work have been extended to axial cracks of varying ligament width, crack length, and cases where cracks are offset by axial or circumferential ligaments

  17. An Experimental Study of the Fracture Coalescence Behaviour of Brittle Sandstone Specimens Containing Three Fissures

    Science.gov (United States)

    Yang, S. Q.; Yang, D. S.; Jing, H. W.; Li, Y. H.; Wang, S. Y.

    2012-07-01

    To analyse the fracture coalescence behaviour of rock, rectangular prismatic sandstone specimens (80 × 160 × 30 mm in size) containing three fissures were tested under uniaxial compression. The strength and deformation behaviours of the specimens are first analysed by investigating the effects of the ligament angle β2 on the peak strength, peak strain and crack initiation stress of the specimens. To confirm the sequence of crack coalescence, a photographic monitoring technique is used throughout the entire period of deformation. Based on the results, the relationship between the real-time crack coalescence process and the axial stress-strain curve of brittle sandstone specimens is also developed, and this relationship can be used to evaluate the macroscopic deformation characteristics of pre-cracked rock. The equivalent strain evolution fields of the specimen, with α = β1 = 45° and β2 = 90°, are obtained using the digital image correlation technique and show good agreement with the experimental results of pre-cracked brittle sandstone. These experimental results are expected to improve the understanding of fracture mechanisms and be used in rock engineering with intermittent structures, such as deep underground excavated tunnels.

  18. Using amphiphilic nanostructures to enable long-range ensemble coalescence and surface rejuvenation in dropwise condensation.

    Science.gov (United States)

    Anderson, David M; Gupta, Maneesh K; Voevodin, Andrey A; Hunter, Chad N; Putnam, Shawn A; Tsukruk, Vladimir V; Fedorov, Andrei G

    2012-04-24

    Controlling coalescence events in a heterogeneous ensemble of condensing droplets on a surface is an outstanding fundamental challenge in surface and interfacial sciences, with a broad practical importance in applications ranging from thermal management of high-performance electronic devices to moisture management in high-humidity environments. Nature-inspired superhydrophobic surfaces have been actively explored to enhance heat and mass transfer rates by achieving favorable dynamics during dropwise condensation; however, the effectiveness of such chemically homogeneous surfaces has been limited because condensing droplets tend to form as pinned Wenzel drops rather than mobile Cassie ones. Here, we introduce an amphiphilic nanostructured surface, consisting of a hydrophilic base with hydrophobic tips, which promotes the periodic regeneration of nucleation sites for small droplets, thus rendering the surface self-rejuvenating. This unique amphiphilic nanointerface generates an arrangement of condensed Wenzel droplets that are fluidically linked by a wetted sublayer, promoting previously unobserved coalescence events where numerous droplets simultaneously merge, without direct contact. Such ensemble coalescences rapidly create fresh nucleation sites, thereby shifting the overall population toward smaller droplets and enhancing the rates of mass and heat transfer during condensation.

  19. Coalescence and movement of nanobubbles studied with tapping mode AFM and tip-bubble interaction analysis

    International Nuclear Information System (INIS)

    Bhushan, Bharat; Wang Yuliang; Maali, Abdelhamid

    2008-01-01

    Imaging of a polystyrene (PS) coated silicon wafer immersed in deionized (DI) water was conducted using atomic force microscopy (AFM) in the tapping mode (TMAFM). As reported earlier, spherical cap-like domains, referred to as nanobubbles, were observed to be distributed on the PS surface. Experiments reveal that, in addition to the well-known parameter of scan load, scan speed is also an important parameter which affects nanobubble coalescence. The process of nanobubble coalescence was studied. It was found that during coalescence, small nanobubbles were easily moved and merged into bigger ones. Based on the interaction between the AFM cantilever tip and a bubble in the so-called force modulation mode of TMAFM, bubble height and adhesive force information for a given bubble was extracted. A viscoelastic model is used to obtain the interaction stiffness and damping coefficient, which provides a method to obtain the mechanical properties of nanobubbles. The model was further used to study the effect of surface tension force on attractive interaction force and contact angle hysteresis on the changes of the interaction damping coefficient during tip-bubble interaction.

  20. Numerical-experiment investigation of coalescence of gaseous protogalactic fragments in triple systems

    International Nuclear Information System (INIS)

    Kiseleva, L.G.; Orlov, V.V.

    1988-01-01

    The numerical-experiment approach in the framework of the general gravitational three-body problem has been used to investigate the dynamical evolution of triple systems of gaseous protogalactic fragments. The masses of the fragments are equal, the initial velocities zero. The initial positions were specified by uniform scanning in the region D of all possible initial configurations. Calculations were continued until the first two-body encounter of the fragments. Different values of the fragment radii at this times were considered, namely, r in the interval [0.001, 0.1]d, where d is the mean diameter of the system. It is shown that for such r the pair of gaseous fragments coalesces in the majority of cases (from 50.2% for r = 0.001d to 96.7% for r = 0.1d). The mean specific angular momentum of their relative motion, which becomes spin angular momentum of the coalescence product, is (0.8 +- 1.0)/centered dot/10 29 /root/μl cm 2 sec for the most probable value r = 10l kpc (the masses of the fragments are 5/centered dot/10 10 μM/circled dot/; l and μ are scale factors), this agreeing in order of magnitude with the specific angular momenta of disk galaxies if l, μ /approximately/ 1. For each value of r, a continuous zone of initial configurations corresponding to coalescences is identified in the region D

  1. A heat transfer model for evaporating micro-channel coalescing bubble flow

    International Nuclear Information System (INIS)

    Consolini, L.; Thome, J.R.

    2009-01-01

    The current study presents a one-dimensional model of confined coalescing bubble flow for the prediction of micro-channel convective boiling heat transfer. Coalescing bubble flow has recently been identified as one of the characteristic flow patterns to be found in micro-scale systems, occurring at intermediate vapor qualities between the isolated bubble and the fully annular regimes. As two or more bubbles bond under the action of inertia and surface tension, the passage frequency of the bubble liquid slug pair declines, with a redistribution of liquid among the remaining flow structures. Assuming heat transfer to occur only by conduction through the thin evaporating liquid film surrounding individual bubbles, the present model includes a simplified description of the dynamics of the thin film evaporation process that takes into account the added mass transfer by breakup of the bridging liquid slugs. The new model has been confronted against experimental data taken within the coalescing bubble flow mode that have been identified by a diabatic micro-scale flow pattern map. The comparisons for three different fluids (R-134a, R-236fa and R-245fa) gave encouraging results with 83% of the database predicted within a ± 30% error band. (author)

  2. Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

    KAUST Repository

    Wang, Ping

    2017-01-18

    Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

  3. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  4. Secondary ion mass spectrometry analysis of In-doped p-type GaN films

    International Nuclear Information System (INIS)

    Chiou, C.Y.; Wang, C.C.; Ling, Y.C.; Chiang, C.I.

    2003-01-01

    SIMS was used to investigate the isoelectronic In-doped p-type GaN films. The growth rate of the p-type GaN film decreased with increasing Mg and In doping. The Mg saturation in GaN was 3.55x10 19 atoms/cm 3 . The role of In as surfactant was evaluated by varying In concentrations and it was observed that the surface appeared smooth with increasing In incorporation. The Mg solubility in p-type GaN improved to 0.0025% molar ratio of the GaN with In incorporation. The In concentration results observed in neutron activation analysis (NAA) were found to be higher by a factor of 2.88 than that observed in SIMS and can be attributed to the difference in sensitivity of the two techniques. Good linearity in the results was observed from both techniques

  5. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    International Nuclear Information System (INIS)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-01-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600–1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles. (invited review)

  6. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    Science.gov (United States)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-07-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

  7. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  8. A density functional theory study of the TMG adsorption on the GaN surface

    Energy Technology Data Exchange (ETDEWEB)

    Ptasinska, Maria; Soltys, Jakub; Piechota, Jacek [Interdisciplinary Centre for Materials Modelling, University of Warsaw, ul. Pawinskiego 5a, 02-106 Warszawa (Poland); Krukowski, Stanislaw [Interdisciplinary Centre for Materials Modelling, University of Warsaw, ul. Pawinskiego 5a, 02-106 Warszawa (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)

    2011-07-01

    TMG (trimetylogallium) and NH{sub 3} (ammonia) are widely used reactants in the metal organic chemical vapor deposition (MOCVD) technique used in the growth of the GaN thin films. We have recently examined theoretically, with the help of the density functional theory (DFT), TMG adsorption on the GaN(0001) surface in order to study formation of bonds between Ga and N. Dangling bonds on the GaN(0001) surface were saturated with the hydrogen atoms. The slab polarization, which is due to the dangling bonds present on the GaN(0001) surface, and energy of the system in the vicinity of TMG was computed for different distances between the surface atoms and TMG. We also studied TMG diffusion on the GaN surface. As a result, the energy path for diffusion from Top N to Hollow was obtained.

  9. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    International Nuclear Information System (INIS)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  10. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  11. Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

    Directory of Open Access Journals (Sweden)

    Yang-Zhe Su

    2018-06-01

    Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

  12. A maximum pseudo-likelihood approach for estimating species trees under the coalescent model

    Directory of Open Access Journals (Sweden)

    Edwards Scott V

    2010-10-01

    Full Text Available Abstract Background Several phylogenetic approaches have been developed to estimate species trees from collections of gene trees. However, maximum likelihood approaches for estimating species trees under the coalescent model are limited. Although the likelihood of a species tree under the multispecies coalescent model has already been derived by Rannala and Yang, it can be shown that the maximum likelihood estimate (MLE of the species tree (topology, branch lengths, and population sizes from gene trees under this formula does not exist. In this paper, we develop a pseudo-likelihood function of the species tree to obtain maximum pseudo-likelihood estimates (MPE of species trees, with branch lengths of the species tree in coalescent units. Results We show that the MPE of the species tree is statistically consistent as the number M of genes goes to infinity. In addition, the probability that the MPE of the species tree matches the true species tree converges to 1 at rate O(M -1. The simulation results confirm that the maximum pseudo-likelihood approach is statistically consistent even when the species tree is in the anomaly zone. We applied our method, Maximum Pseudo-likelihood for Estimating Species Trees (MP-EST to a mammal dataset. The four major clades found in the MP-EST tree are consistent with those in the Bayesian concatenation tree. The bootstrap supports for the species tree estimated by the MP-EST method are more reasonable than the posterior probability supports given by the Bayesian concatenation method in reflecting the level of uncertainty in gene trees and controversies over the relationship of four major groups of placental mammals. Conclusions MP-EST can consistently estimate the topology and branch lengths (in coalescent units of the species tree. Although the pseudo-likelihood is derived from coalescent theory, and assumes no gene flow or horizontal gene transfer (HGT, the MP-EST method is robust to a small amount of HGT in the

  13. Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN

    International Nuclear Information System (INIS)

    Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M

    2006-01-01

    We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values

  14. Ab initio investigations of the strontium gallium nitride ternaries Sr 3GaN3 and Sr6GaN5: Promising materials for optoelectronic

    KAUST Repository

    Goumri-Said, Souraya

    2013-05-31

    Sr3GaN3 and Sr6GaN5 could be promising potential materials for applications in the microelectronics, optoelectronics and coating materials areas of research. We studied in detail their structural, elastic, electronic, optical as well as the vibrational properties, by means of density functional theory framework. Both of these ternaries are semiconductors, where Sr3GaN3 exhibits a small indirect gap whereas Sr6GaN5 has a large direct gap. Indeed, their optical properties are reported for radiation up to 40 eV. Charge densities contours, Hirshfeld and Mulliken populations, are reported to investigate the role of each element in the bonding. From the mechanical properties calculation, it is found that Sr6GaN5 is harder than Sr3GaN3, and the latter is more anisotropic than the former. The phonon dispersion relation, density of phonon states and the vibrational stability are reported from the density functional perturbation theory calculations. © 2013 IOP Publishing Ltd.

  15. Asymptotic Properties of the Number of Matching Coalescent Histories for Caterpillar-Like Families of Species Trees.

    Science.gov (United States)

    Disanto, Filippo; Rosenberg, Noah A

    2016-01-01

    Coalescent histories provide lists of species tree branches on which gene tree coalescences can take place, and their enumerative properties assist in understanding the computational complexity of calculations central in the study of gene trees and species trees. Here, we solve an enumerative problem left open by Rosenberg (IEEE/ACM Transactions on Computational Biology and Bioinformatics 10: 1253-1262, 2013) concerning the number of coalescent histories for gene trees and species trees with a matching labeled topology that belongs to a generic caterpillar-like family. By bringing a generating function approach to the study of coalescent histories, we prove that for any caterpillar-like family with seed tree t , the sequence (h n ) n ≥ 0 describing the number of matching coalescent histories of the n th tree of the family grows asymptotically as a constant multiple of the Catalan numbers. Thus, h n  ∼ β t c n , where the asymptotic constant β t > 0 depends on the shape of the seed tree t. The result extends a claim demonstrated only for seed trees with at most eight taxa to arbitrary seed trees, expanding the set of cases for which detailed enumerative properties of coalescent histories can be determined. We introduce a procedure that computes from t the constant β t as well as the algebraic expression for the generating function of the sequence (h n ) n ≥ 0 .

  16. A lattice Boltzmann simulation of coalescence-induced droplet jumping on superhydrophobic surfaces with randomly distributed structures

    Science.gov (United States)

    Zhang, Li-Zhi; Yuan, Wu-Zhi

    2018-04-01

    The motion of coalescence-induced condensate droplets on superhydrophobic surface (SHS) has attracted increasing attention in energy-related applications. Previous researches were focused on regularly rough surfaces. Here a new approach, a mesoscale lattice Boltzmann method (LBM), is proposed and used to model the dynamic behavior of coalescence-induced droplet jumping on SHS with randomly distributed rough structures. A Fast Fourier Transformation (FFT) method is used to generate non-Gaussian randomly distributed rough surfaces with the skewness (Sk), kurtosis (K) and root mean square (Rq) obtained from real surfaces. Three typical spreading states of coalesced droplets are observed through LBM modeling on various rough surfaces, which are found to significantly influence the jumping ability of coalesced droplet. The coalesced droplets spreading in Cassie state or in composite state will jump off the rough surfaces, while the ones spreading in Wenzel state would eventually remain on the rough surfaces. It is demonstrated that the rough surfaces with smaller Sks, larger Rqs and a K at 3.0 are beneficial to coalescence-induced droplet jumping. The new approach gives more detailed insights into the design of SHS.

  17. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

    Energy Technology Data Exchange (ETDEWEB)

    He, Yunrui; Wang, Jun, E-mail: wangjun12@bupt.edu.cn; Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

    2015-05-18

    The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

  18. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

    International Nuclear Information System (INIS)

    De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

    2010-01-01

    The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    International Nuclear Information System (INIS)

    Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

    2014-01-01

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

  20. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-10-30

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

  1. GaN Nanowire Devices: Fabrication and Characterization

    Science.gov (United States)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  2. Photoluminescence enhancement from GaN by beryllium doping

    Science.gov (United States)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  3. Structural properties of Ne implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, A; Zhu, J J; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Wang, H; Zhao, D G; Zhang, S M; Jiang, D S; Wang, Y T; Yang, H [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Ali, A; Israr, M [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: abdulmajid40@yahoo.com

    2008-03-15

    We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10{sup 14} cm{sup -2} was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm{sup -1} for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice.

  4. Structural properties of Ne implanted GaN

    International Nuclear Information System (INIS)

    Majid, A; Zhu, J J; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Wang, H; Zhao, D G; Zhang, S M; Jiang, D S; Wang, Y T; Yang, H; Ali, A; Israr, M

    2008-01-01

    We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10 14 cm -2 was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm -1 for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice

  5. GaN polarity determination by photoelectron diffraction

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Jiříček, Petr; Paskova, T.; Bieloshapka, Igor; Bartoš, Igor

    2013-01-01

    Roč. 103, č. 9 (2013), "091601-1"-"091601-4" ISSN 0003-6951 R&D Projects: GA ČR(CZ) GBP108/12/G108 Grant - others:AV ČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaN * photoelectron diffraction * wurtzite * surface polarity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.515, year: 2013 http://apl.aip.org/resource/1/applab/v103/i9/p091601_s1?isAuthorized=no

  6. Characterisation of Cs ion implanted GaN by DLTS

    Science.gov (United States)

    Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Hlatshwayo, T. T.; Diale, M.

    2018-04-01

    Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10-11 cm-2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10-15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.

  7. Transport mechanisms in Schottky diodes realized on GaN

    Science.gov (United States)

    Amor, Sarrah; Ahaitouf, Ali; Ahaitouf, Abdelaziz; Salvestrini, Jean Paul; Ougazzaden, Abdellah

    2017-03-01

    This work is focused on the conducted transport mechanisms involved on devices based in gallium nitride GaN and its alloys. With considering all conduction mechanisms of current, its possible to understanded these transport phenomena. Thanks to this methodology the current-voltage characteristics of structures with unusual behaviour are further understood and explain. Actually, the barrier height (SBH) is a complex problem since it depends on several parameters like the quality of the metal-semiconductor interface. This study is particularly interesting as solar cells are made on this material and their qualification is closely linked to their transport properties.

  8. Shape dependent electronic properties of wurzite GaN nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Pankaj, E-mail: pankajs@iiitm.ac.in; Kumar, Avaneesh, E-mail: avaneeshk7@ymail.com; Sharma, Varun, E-mail: sunny2013@gmail.com [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior-474015 (India); Jaiswal, Neeraj K., E-mail: neerajkumar.phd@gmail.com [Discipline of Physics, PDPM-Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur-482005 (India)

    2016-05-06

    In the present work, energetic stability and electronic behavior of triangular and square shaped wurzite GaN NW oriented along [1100] and [11 2 0] direction has been investigated by employing ab-initio DFT calculation. Structural analysis suggests that triangular shaped NW undergoes strong surface reconstruction compared to square shaped NW. However, binding energy reveals that square shaped NW is energetically more feasible than triangular NW. Further, from electronic band structure we observe that both structures are metallic with higher metallicity for triangular shaped NW.

  9. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  10. Determination of carrier diffusion length in p- and n-type GaN

    Science.gov (United States)

    Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

    2014-03-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

  11. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Science.gov (United States)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  12. Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

    2016-09-01

    For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

  13. Defect formation and magnetic properties of Co-doped GaN crystal and nanowire

    International Nuclear Information System (INIS)

    Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying

    2013-01-01

    Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling

  14. Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

    International Nuclear Information System (INIS)

    Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

    2013-01-01

    Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

  15. Polarity analysis of GaN nanorods by photo-assisted Kelvin probe force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Jiandong; Neumann, Richard; Wang, Xue; Li, Shunfeng; Fuendling, Soenke; Merzsch, Stephan; Al-Suleiman, Mohamed A.M.; Soekmen, Uensal; Wehmann, Hergo-H.; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany)

    2011-07-15

    Polarity dependence (N-polar (000-1) and Ga-polar (0001)) of surface photovoltage of epitaxially grown, vertically aligned GaN nanorods has been investigated by photo-assisted Kelvin probe force microscopy (KPFM). Commercial GaN substrates with known polarities are taken as reference samples. The polarity of GaN substrates can be well distinguished by the change in surface photovoltage upon UV illumination in air ambient. These different behaviors of Ga- and N-polar surfaces are attributed to the polarity-related surface-bound charges and photochemical reactivity. GaN nanorods were grown on patterned SiO{sub 2}/sapphire templates by metal-organic vapor phase epitaxy (MOVPE). In order to analyze the bottom surface of the grown GaN nanorods, a technique known from high power electronics and joining techniques is applied to remove the substrate. The top and bottom surfaces of the GaN nanorods are identified to be N-polar and Ga-polar according to the KPFM results, respectively. Our experiments demonstrate that KPFM is a simple and suitable method capable to identify the polarity of GaN nanorods. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  17. Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

    International Nuclear Information System (INIS)

    San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

    2013-01-01

    The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

  18. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

    International Nuclear Information System (INIS)

    Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

    2012-01-01

    Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

  19. Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces

    International Nuclear Information System (INIS)

    Ito, T; Akiyama, T; Nakamura, K

    2012-01-01

    Reconstruction, adsorption and incorporation on various GaN surfaces are systematically investigated using an ab initio-based approach that predicts the surface phase diagram as functions of temperature and beam-equivalent pressure (BEP). The calculated results for GaN surface reconstructions with polar (0 0 0 1), nonpolar (1 1 −2 0), semipolar (1 −1 0 1) and semipolar (1 1 −2 2) orientations imply that reconstructions on GaN surfaces with Ga adlayers generally appear on the polar and the semipolar surfaces, while the stable ideal surface without Ga adsorption is found on the nonpolar GaN(1 1 −2 0) surface because it satisfies the electron counting rule. The hydrogen adsorption on GaN(0 0 0 1) and GaN(1 1 −2 0) realizes several surface structures forming N–H and Ga–NH 2 bonds on their surfaces that depend on temperature and Ga BEP during metal-organic vapor-phase epitaxy (MOVPE). In contrast, the stable structures due to hydrogen adsorption on the semipolar GaN(1 −1 0 1) and GaN(1 1 −2 2) surfaces are not varied over the wide range of temperature and Ga BEP. This implies that the hydrogen adsorbed stable structures are expected to emerge on the semipolar surfaces during MOVPE regardless of the growth conditions. Furthermore, we clarify that Mg incorporation on GaN(1 −1 0 1) surfaces is enhanced by hydrogen adsorption consistent with experimental findings

  20. Coalescent-based genome analyses resolve the early branches of the euarchontoglires.

    Directory of Open Access Journals (Sweden)

    Vikas Kumar

    Full Text Available Despite numerous large-scale phylogenomic studies, certain parts of the mammalian tree are extraordinarily difficult to resolve. We used the coding regions from 19 completely sequenced genomes to study the relationships within the super-clade Euarchontoglires (Primates, Rodentia, Lagomorpha, Dermoptera and Scandentia because the placement of Scandentia within this clade is controversial. The difficulty in resolving this issue is due to the short time spans between the early divergences of Euarchontoglires, which may cause incongruent gene trees. The conflict in the data can be depicted by network analyses and the contentious relationships are best reconstructed by coalescent-based analyses. This method is expected to be superior to analyses of concatenated data in reconstructing a species tree from numerous gene trees. The total concatenated dataset used to study the relationships in this group comprises 5,875 protein-coding genes (9,799,170 nucleotides from all orders except Dermoptera (flying lemurs. Reconstruction of the species tree from 1,006 gene trees using coalescent models placed Scandentia as sister group to the primates, which is in agreement with maximum likelihood analyses of concatenated nucleotide sequence data. Additionally, both analytical approaches favoured the Tarsier to be sister taxon to Anthropoidea, thus belonging to the Haplorrhine clade. When divergence times are short such as in radiations over periods of a few million years, even genome scale analyses struggle to resolve phylogenetic relationships. On these short branches processes such as incomplete lineage sorting and possibly hybridization occur and make it preferable to base phylogenomic analyses on coalescent methods.

  1. Morphological, Structural and Optical Evolution of Ag Nanostructures on c-Plane GaN Through the Variation of Deposition Amount and Temperature

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Pandey, Puran; Zhang, Quanzhen; Kunwar, Sundar; Lee, Jihoon

    2018-03-01

    Owing to their tunable properties, Ag nanostructures have been widely adapted in various applications and the morphological control can determine their performance and effectiveness. In this work, we demonstrate the morphological and optical evolution of Ag nanostructures on GaN (0001) by the systematic control of deposition amount at two distinctive annealing temperatures. Based on the Volmer-Weber and coalescence growth models, the nanostructure growth commenced by the thermal solid-state-dewetting evolve in terms of size, density and configuration. At 450 °C, the round-dome shaped Ag nanoparticles (regime I), irregular Ag nano-mounds (regime II) and void-layer structures (regime III) are observed along with the gradually increased deposition amount. As a sharp distinction, the solid state dewetting process occur more radically at 700 °C and also, the Ag sublimation and the effect on the nanostructure formation are observed in a clear regime shift scaled by the deposition amount. Meanwhile, a strong dependency of reflectance spectra evolution on the Ag nanostructure morphology is witnessed for both sets. In particular, Ag dipolar resonance peaks are significantly red-shifted from VIS to NIR regions along with the nanostructure evolution. The reflectance, PL and Raman intensity variation are also observed and discussed based on the evolution of Ag nanostructures.

  2. The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

    International Nuclear Information System (INIS)

    Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

    2009-01-01

    The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

  3. GW170814: A three-detector observation of gravitational waves from a binary black hole coalescence

    OpenAIRE

    Abbott, B. P.; Abbott, R.; Adhikari, R. X.; Ananyeva, A.; Anderson, S. B.; Appert, S.; Arai, K.; Araya, M. C.; Barayoga, J. C.; Barish, B. C.; Berger, B. K.; Billingsley, G.; Biscans, S; Blackburn, J. K.; Blair, C. D.

    2017-01-01

    On August 14, 2017 at 10:30:43 UTC, the Advanced Virgo detector and the two Advanced LIGO detectors coherently observed a transient gravitational-wave signal produced by the coalescence of two stellar mass black holes, with a false-alarm-rate of ≾ 1 in 27000 years. The signal was observed with a three-detector network matched-filter signal-to-noise ratio of 18. The inferred masses of the initial black holes are 30.5^(+5.7)_(-3.0)M⊙ and 25.3^(+2.8)_(-4.2)M⊙ (at the 90% credible level). The lum...

  4. Nonlinear evolution of tearing and coalescence instability with free boundary conditions

    International Nuclear Information System (INIS)

    Malara, F.; Veltri, P.; Carbone, V.

    1990-01-01

    The nonlinear evolution of a reconnection instability in a plane current sheet is described. In particular, the appearance of coalescence instability was studied, which follows the formation of a chain of magnetic islands due to the tearing instability. In order to describe realistically this phonemenon, the time evolution of all the unstable modes which are present in the spectrum at the same time is considered. Moreover, this study allows to investigate the turbulent energy cascade which forms owing to the nonlinear coupling between such modes. (R.P.) 9 refs.; 6 figs

  5. Solid colloidal particles inducing coalescence in bitumen-in-water emulsions.

    Science.gov (United States)

    Legrand, J; Chamerois, M; Placin, F; Poirier, J E; Bibette, J; Leal-Calderon, F

    2005-01-04

    Silica particles are dispersed in the continuous phase of bitumen-in-water emulsions. The mixture remains dispersed in quiescent storage conditions. However, rapid destabilization occurs once a shear is applied. Observations under the microscope reveal that the bitumen droplets form a colloidal gel and coalesce upon application of a shear. We follow the kinetic evolution of the emulsions viscosity, eta, at constant shear rate: eta remains initially constant and exhibits a dramatic increase after a finite time, tau. We study the influence of various parameters on the evolution of tau: bitumen droplet size and volume fraction, silica diameter and concentration, shear rate, etc.

  6. The gentilionic theory for quarks: Manifestly confining for quarks and manifestly non-coalescent for hadrons

    International Nuclear Information System (INIS)

    Cattani, M.S.D.

    1987-01-01

    It's shown that the gentilionic theory for quarks is manifestly confining for quarks and manifestly non-coalescent for hadrons, and that these properties are rigorously deduced only from first principles. To prove them no arguments involving the intrinsic nature of gentileons or dynamical hypothesis are necessary to be adopted. It's also shown that, in the context of the quantum field theory, gentileous can be taken approximately as fermions and that the usual quantum chromodynamics can be used to calculate the properties of gentilionic hadrons. (Author) [pt

  7. Multi-scale simulation of droplet-droplet interactions and coalescence

    CSIR Research Space (South Africa)

    Musehane, Ndivhuwo M

    2016-10-01

    Full Text Available Conference on Computational and Applied Mechanics Potchefstroom 3–5 October 2016 Multi-scale simulation of droplet-droplet interactions and coalescence 1,2Ndivhuwo M. Musehane?, 1Oliver F. Oxtoby and 2Daya B. Reddy 1. Aeronautic Systems, Council... topology changes that result when droplets interact. This work endeavours to eliminate the need to use empirical correlations based on phenomenological models by developing a multi-scale model that predicts the outcome of a collision between droplets from...

  8. Effect of Contact Conditions on Void Coalescence at Low Stress Triaxiality Shearing

    DEFF Research Database (Denmark)

    Dahl, Jonas; Nielsen, Kim Lau; Tvergaard, Viggo

    2012-01-01

    , the deformed voids develop into shapes that closely resemble micro-cracks. It is found that the predictions using the frictionless pseudo-contact approach are in rather good agreement with corresponding simulations that fully account for frictionless contact. In particular, good agreement is found at close...... to zero stress triaxiality. Furthermore, it is shown that accounting for friction at the void surface strongly postpones the onset of coalescence, hence, increasing the overall material ductility. The changes in overall material behavior are here presented for a wide range of initial material and loading...... conditions, such as various stress triaxialities, void sizes, and friction coefficients....

  9. Study of statistical properties of hybrid statistic in coherent multi-detector compact binary coalescences Search

    OpenAIRE

    Haris, K; Pai, Archana

    2015-01-01

    In this article, we revisit the problem of coherent multi-detector search of gravitational wave from compact binary coalescence with Neutron stars and Black Holes using advanced interferometers like LIGO-Virgo. Based on the loss of optimal multi-detector signal-to-noise ratio (SNR), we construct a hybrid statistic as a best of maximum-likelihood-ratio(MLR) statistic tuned for face-on and face-off binaries. The statistical properties of the hybrid statistic is studied. The performance of this ...

  10. Magneto-ballistic transport in GaN nanowires

    International Nuclear Information System (INIS)

    Santoruvo, Giovanni; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison

    2016-01-01

    The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

  11. Magneto-ballistic transport in GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison, E-mail: elison.matioli@epfl.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), CH 1015 Lausanne (Switzerland)

    2016-09-05

    The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

  12. Size dictated thermal conductivity of GaN

    Science.gov (United States)

    Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.; Talin, A. Alec; Rost, Christina M.; Maria, Jon-Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

    2016-09-01

    The thermal conductivity of n- and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3-4 μm was investigated using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (1015-1018 cm-3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends—and their overall reduction relative to bulk—are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

  13. Radiotracer Spectroscopy on Group II Acceptors in GaN

    CERN Multimedia

    2002-01-01

    The semiconductor GaN is already used for the production of high power light emitting diodes in the blue and UV spectral range. But the $\\rho$-type doping, which is usually obtained by Mg doping, is still inefficient due to compensation and passivation effects caused by defects present in the material. It is theoretically predicted, that Be is a more promising candidate for $\\rho$-doping with a lower ionization energy of 60meV. It is our goal to investigate the electrical and optical properties of Be- and Mg-related defects in GaN to clarify the problem of compensation and passivation. The used methods are standard spectroscopic methods in semiconductor physics which are improved by using radioactive isotopes. The radioactive decay of $^{7}$Be and $^{28}$Mg is used to clearly correlate different signals with Be or Mg related defects. We intend to use the spectroscopic techniques Deep Level Transient Spectroscopy (DLTS), Thermal Admittance Spectroscopy (TAS), photoluminescence (PL) and additionally Hall-effect...

  14. Atomic layer deposition of GaN at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi [UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

    2012-01-15

    The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

  15. Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

    Directory of Open Access Journals (Sweden)

    Moonsang Lee

    2018-06-01

    Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

  16. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  17. Modification of GaN(0001) growth kinetics by Mg doping

    International Nuclear Information System (INIS)

    Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

    2004-01-01

    We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

  18. Redshift of A 1(longitudinal optical) mode for GaN crystals under strong electric field

    Science.gov (United States)

    Gu, Hong; Wu, Kaijie; Zheng, Shunan; Shi, Lin; Zhang, Min; Liu, Zhenghui; Liu, Xinke; Wang, Jianfeng; Zhou, Taofei; Xu, Ke

    2018-01-01

    We investigated the property of GaN crystals under a strong electric field. The Raman spectra of GaN were measured using an ultraviolet laser, and a remarkable redshift of the A 1(LO) mode was observed. The role of the surface depletion layer was discussed, and the interrelation between the electric field and phonons was revealed. First-principles calculations indicated that, in particular, the phonons that vibrate along the [0001] direction are strongly influenced by the electric field. This effect was confirmed by a surface photovoltage experiment. The results revealed the origin of the redshift and presented the phonon property of GaN under a strong electric field.

  19. Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

    Science.gov (United States)

    Wei, J. D.; Li, S. F.; Atamuratov, A.; Wehmann, H.-H.; Waag, A.

    2010-10-01

    The behavior of GaN surfaces during photoassisted Kelvin probe force microscopy is demonstrated to be strongly dependant on surface polarity. The surface photovoltage of GaN surfaces illuminated with above-band gap light is analyzed as a function of time and light intensity. Distinct differences between Ga-polar and N-polar surfaces could be identified, attributed to photoinduced chemisorption of oxygen during illumination. These differences can be used for a contactless, nondestructive, and easy-performable analysis of the polarity of GaN surfaces.

  20. Electron holography studies of the charge on dislocations in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Cherns, D.; Jiao, C.G.; Mokhtari, H. [H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Cai, J.; Ponce, F.A. [Department of Physics and Astronomy, Arizona State University, Tempe, AZ85287 (United States)

    2002-12-01

    The measurement of charge on dislocations in GaN by electron holography is described. Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged. It is shown that the results are consistent with a model which assumes Fermi level pinning at dislocation states about 2.5 V below the conduction band edge. The application of electron holography to screw dislocations, and the dependence of the observations on the dislocation core structure, are also discussed. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  1. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Capezzuto, Pio [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Brown, April S. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Kim, Tong-Ho [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Choi, Soojeong [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States)

    2006-10-31

    GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.

  2. Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

    International Nuclear Information System (INIS)

    Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2010-01-01

    Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

  3. MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

    2010-09-01

    100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

  4. Partial tooth gear bearings

    Science.gov (United States)

    Vranish, John M. (Inventor)

    2010-01-01

    A partial gear bearing including an upper half, comprising peak partial teeth, and a lower, or bottom, half, comprising valley partial teeth. The upper half also has an integrated roller section between each of the peak partial teeth with a radius equal to the gear pitch radius of the radially outwardly extending peak partial teeth. Conversely, the lower half has an integrated roller section between each of the valley half teeth with a radius also equal to the gear pitch radius of the peak partial teeth. The valley partial teeth extend radially inwardly from its roller section. The peak and valley partial teeth are exactly out of phase with each other, as are the roller sections of the upper and lower halves. Essentially, the end roller bearing of the typical gear bearing has been integrated into the normal gear tooth pattern.

  5. Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

    International Nuclear Information System (INIS)

    Zainal, N.; Novikov, S.V.; Akimov, A.V.; Staddon, C.R.; Foxon, C.T.; Kent, A.J.

    2012-01-01

    The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10 μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50 μm thick. The surface morphology of thick c-GaN is also presented.

  6. Relative position control and coalescence of independent microparticles using ultrasonic waves

    Science.gov (United States)

    Deng, Shuang; Jia, Kun; Chen, Jian; Mei, Deqing; Yang, Keji

    2017-05-01

    Controlling the relative positions and coalescence of independent cells or microparticles is of particular importance for studying many physical phenomena, biological research, pharmaceutical tests, and chemical material processing. In this work, contactless maneuvering of two independent microparticles initially lying on a rigid surface was performed at a stable levitation height within a water-filled ultrasonic chamber. Three lead zirconate titanate transducers with 2 MHz thickness resonance frequency were obliquely mounted in a homemade device to form a sound field in a half space. By modulating the excitation voltage of a single transducer and the subsequent combination of amplitude and phase modulation, two separate 80 μm diameter silica beads were picked up from the chamber bottom, approached, and then coalesced to form a cluster in different ways. Both particles simultaneously migrated towards each other in the former process, while more dexterous movement with single-particle migration was realized for the other process. There is good agreement between the measured trajectories and theoretical predictions based on the theory of the first-order acoustic radiation force. The method introduced here also has the ability to form a cluster at any desired location in the chamber, which is promising for macromolecule processing ranging from the life sciences to biochemistry and clinical practice.

  7. GW151226: Observation of Gravitational Waves from a 22-Solar-Mass Binary Black Hole Coalescence

    Science.gov (United States)

    Abbott, B. P.; Abbott, R.; Abbott, T. D.; Abernathy, M. R.; Acernese, F.; Ackley, K.; Adams, C.; Adams, T.; Addesso, P.; Camp, Jordan B.; hide

    2016-01-01

    We report the observation of a gravitational-wave signal produced by the coalescence of two stellar-mass black holes. The signal, GW151226, was observed by the twin detectors of the Laser Interferometer Gravitational-Wave Observatory (LIGO) on December 26, 2015 at 03:38:53 UTC. The signal was initially identified within 70 s by an online matched-filter search targeting binary coalescences. Subsequent off-line analyses recovered GW151226 with a network signal-to-noise ratio of 13 and a significance greater than 5(sigma). The signal persisted in the LIGO frequency band for approximately 1 s, increasing in frequency and amplitude over about 55 cycles from 35 to 450 Hz, and reached a peak gravitational strain of 3.4(+0.7/-0.9) x 10(exp -22). The inferred source-frame initial black hole masses are 14.2(+8.3/-3.7 Stellar Mass and 7.5(+2.3/-2.3) Stellar Mass, and the final black hole mass is 20.8(+6.1/-1.7) Stellar Mass. We find that at least one of the component black holes has spin greater than 0.2. This source is located at a luminosity distance of 440(+180/-190) Mpc corresponding to a redshift of 0.090(+.030/-0.04). All uncertainties define a 90% credible interval. This second gravitational-wave observation provides improved constraints on stellar populations and on deviations from general relativity.

  8. Stochastic coalescence in finite systems: an algorithm for the numerical solution of the multivariate master equation.

    Science.gov (United States)

    Alfonso, Lester; Zamora, Jose; Cruz, Pedro

    2015-04-01

    The stochastic approach to coagulation considers the coalescence process going in a system of a finite number of particles enclosed in a finite volume. Within this approach, the full description of the system can be obtained from the solution of the multivariate master equation, which models the evolution of the probability distribution of the state vector for the number of particles of a given mass. Unfortunately, due to its complexity, only limited results were obtained for certain type of kernels and monodisperse initial conditions. In this work, a novel numerical algorithm for the solution of the multivariate master equation for stochastic coalescence that works for any type of kernels and initial conditions is introduced. The performance of the method was checked by comparing the numerically calculated particle mass spectrum with analytical solutions obtained for the constant and sum kernels, with an excellent correspondence between the analytical and numerical solutions. In order to increase the speedup of the algorithm, software parallelization techniques with OpenMP standard were used, along with an implementation in order to take advantage of new accelerator technologies. Simulations results show an important speedup of the parallelized algorithms. This study was funded by a grant from Consejo Nacional de Ciencia y Tecnologia de Mexico SEP-CONACYT CB-131879. The authors also thanks LUFAC® Computacion SA de CV for CPU time and all the support provided.

  9. Continuous observation of cavity growth and coalescence by creep-fatigue tests in SEM

    International Nuclear Information System (INIS)

    Arai, Masayuki; Ogata, Takashi; Nitta, Akito

    1995-01-01

    Structural components operating at high temperatures in power plants are subjected to interaction of thermal fatigue and creep which results in creep-fatigue damage. In evaluating the life of those components, it is important to understand microscopic damage evolution under creep-fatigue conditions. In this study, static creep and creep-fatigue tests with tensile holdtime were conducted on SUS304 stainless steel by using a high-temperature fatigue machine combined with a scanning electron microscope (SEM), and cavity growth and coalescence behaviors on surface grain boundaries were observed continuously by the SEM. Quantitative analysis of creep cavity growth based on the observation was made for comparison with theoretical growth models. As a result, it was found that grain boundary cavities nucleate at random and grow preferentially on grain boundaries in a direction almost normal to the stress axis. Under the creep condition, the cavities grow monotonously on grain boundaries while they remain the elliptical shape. On the other hand, under the creep-fatigue condition the cavities grow with an effect of local strain distribution around the grain boundary due to cyclic loading and the micro cracks of one grain-boundary length were formed by coalescence of the cavities. Also, cavity nucleation and growth rates for creep-fatigue were more rapid than those for static creep and the constrained cavity growth model coincided well with the experimental data for creep. (author)

  10. Coalescence model of two collinear cracks existing in steam generator tubes

    International Nuclear Information System (INIS)

    Moon, S.-I.; Chang, Y.-S.; Kim, Y.-J.; Park, Y.-W.; Song, M.-H.; Choi, Y.-H.; Lee, J.-H.

    2005-01-01

    The 40% of wall thickness criterion has been used as a plugging rule of steam generator tubes but it can be applicable just to a single-cracked tubes. In the previous studies preformed by the authors, a total of 10 local failure prediction models were introduced to estimate the coalescence load of two adjacent collinear through-wall cracks existing in thin plates, and the reaction force model and plastic zone contact model were selected as optimum models among them. The objective of this study is to verify the applicability of the proposed optimum local failure prediction models to the tubes with two collinear through-wall cracks. For this, a series of plastic collapse tests and finite element analyses were carried out using the tubes containing two collinear through-wall cracks. It has been shown that the proposed optimum failure models can predict the local failure behavior of two collinear through-wall cracks existing in tubes well. And a coalescence evaluation diagram was developed which can be used to determine whether the adjacent cracks detected by NED coalsece or not. (authors)

  11. Coalescent pleural malignant mesothelioma and adenocarcinoma of the lung, involving only minor asbestos exposure.

    Science.gov (United States)

    Tsuzuki, Toyonori; Ninomiya, Hironori; Natori, Yuji; Ishikawa, Yuichi

    2008-07-01

    Coexistence of pulmonary adenocarcinoma and pleural malignant mesothelioma is extremely rare, although both are asbestos-related. Herein is presented a rare case of coalescent lung tumor made up of a malignant mesothelioma and a pulmonary adenocarcinoma in a 62-year-old Japanese man, a high-school teacher with only minor asbestos exposure. Preoperative diagnosis of adenocarcinoma was made on transbronchial biopsy. At surgery, multiple small white nodules were observed on the parietal pleural surface, opposite to the lung tumor. They were confirmed to be malignant mesothelioma on histopathology of paraffin section. The pulmonary tumor mass itself consisted of two distinct portions. The major part contained papillary proliferation of hobnail and columnar cells. Peripherally, neoplastic cells grew in a lepidic fashion and micropapillary growth was also detected. The other component featured tubular structures. The former was positive for adenocarcinoma markers such as CEA, Ber-EP4, PE-10, thyroid transcription factor-1 and Napsin A, and negative for mesothelial markers including calretinin, D2-40, WT-1 and HBME, while the latter was the opposite, resulting in a diagnosis of coalescing malignant mesothelioma and adenocarcinoma. The panel of antibodies used for immunohistochemistry was useful to distinguish the two different components in the one tumor.

  12. Generation of electromagnetic waves and Alfven waves during coalescence of magnetic islands in pair plasmas

    International Nuclear Information System (INIS)

    Sakai, J.I.; Haruki, T.; Kazimura, Y.

    2000-01-01

    It is shown by using a 2-D fully relativistic electromagnetic particle-in-cell (PIC) code that the tearing instability in a current sheet of pair plasmas is caused by Landau resonances of both electrons and positrons. Strong magnetic flux can be generated during coalescence of magnetic islands in the nonlinear phase of the tearing instability. The magnetic flux produced in an O-type magnetic island is caused from the counter-streaming instability found by Kazimura et al. (1998). It is also shown that charge separation with a quadrupole-like structure is generated from the localized strong magnetic flux. During the decay of the quadrupole-like charge structure as well as the magnetic flux, there appear wave emission with high-frequency electromagnetic waves and Alfven waves as well as Langmuir waves. We also show by using a 3-D PIC code that current filaments associated with the O-type magnetic islands become unstable against the kink instability during the coalescence of current filaments. (orig.)

  13. Rooting phylogenetic trees under the coalescent model using site pattern probabilities.

    Science.gov (United States)

    Tian, Yuan; Kubatko, Laura

    2017-12-19

    Phylogenetic tree inference is a fundamental tool to estimate ancestor-descendant relationships among different species. In phylogenetic studies, identification of the root - the most recent common ancestor of all sampled organisms - is essential for complete understanding of the evolutionary relationships. Rooted trees benefit most downstream application of phylogenies such as species classification or study of adaptation. Often, trees can be rooted by using outgroups, which are species that are known to be more distantly related to the sampled organisms than any other species in the phylogeny. However, outgroups are not always available in evolutionary research. In this study, we develop a new method for rooting species tree under the coalescent model, by developing a series of hypothesis tests for rooting quartet phylogenies using site pattern probabilities. The power of this method is examined by simulation studies and by application to an empirical North American rattlesnake data set. The method shows high accuracy across the simulation conditions considered, and performs well for the rattlesnake data. Thus, it provides a computationally efficient way to accurately root species-level phylogenies that incorporates the coalescent process. The method is robust to variation in substitution model, but is sensitive to the assumption of a molecular clock. Our study establishes a computationally practical method for rooting species trees that is more efficient than traditional methods. The method will benefit numerous evolutionary studies that require rooting a phylogenetic tree without having to specify outgroups.

  14. An Island Coalescence Scenario for Near-Earth Current Disruption in the Magnetotail

    International Nuclear Information System (INIS)

    Zhi-Wei, Ma; Xing-Qiang, Lu

    2009-01-01

    A current disruption and dipolarization scenario associated with island coalescences in the near-Earth region is proposed. The thin and elongated current-sheet built up during the growth phase is unstable due to a tearing mode instability that leads to formation of multiple magnetic islands (or magnetic flux ropes in the three dimensional case) in the near-Earth region. The growth rate of the tearing mode should be different in different locations because the rate is in general determined by the external driving force and the local plasma sheet properties. When the rate of the magnetic reconnection in the mid-tail region around 20R E is much larger than that in other locations, the strong bulk earthward flows resulting from the fast reconnection in the mid-tail drive the earthward convection and the coalescence of the magnetic islands. Consequently, the cross-tail current in the near-Earth region is suddenly disrupted and the geometry of the magnetic field changes from tail-like to dipolar-like in the ideal time scale. This proposed scenario is tested by Hall MHD simulation and is compared with the observations. (geophysics, astronomy, and astrophysics)

  15. On incomplete sampling under birth-death models and connections to the sampling-based coalescent.

    Science.gov (United States)

    Stadler, Tanja

    2009-11-07

    The constant rate birth-death process is used as a stochastic model for many biological systems, for example phylogenies or disease transmission. As the biological data are usually not fully available, it is crucial to understand the effect of incomplete sampling. In this paper, we analyze the constant rate birth-death process with incomplete sampling. We derive the density of the bifurcation events for trees on n leaves which evolved under this birth-death-sampling process. This density is used for calculating prior distributions in Bayesian inference programs and for efficiently simulating trees. We show that the birth-death-sampling process can be interpreted as a birth-death process with reduced rates and complete sampling. This shows that joint inference of birth rate, death rate and sampling probability is not possible. The birth-death-sampling process is compared to the sampling-based population genetics model, the coalescent. It is shown that despite many similarities between these two models, the distribution of bifurcation times remains different even in the case of very large population sizes. We illustrate these findings on an Hepatitis C virus dataset from Egypt. We show that the transmission times estimates are significantly different-the widely used Gamma statistic even changes its sign from negative to positive when switching from the coalescent to the birth-death process.

  16. GW151226: Observation of Gravitational Waves from a 22-Solar-Mass Binary Black Hole Coalescence

    Science.gov (United States)

    Abbott, B. P.; Abbott, R.; Abbott, T. D.; Abernathy, M. R.; Acernese, F.; Ackley, K.; Adams, C.; Adams, T.; Addesso, P.; Adhikari, R. X.; Adya, V. B.; Affeldt, C.; Agathos, M.; Agatsuma, K.; Aggarwal, N.; Aguiar, O. D.; Aiello, L.; Ain, A.; Ajith, P.; Allen, B.; Allocca, A.; Altin, P. A.; Anderson, S. B.; Anderson, W. G.; Arai, K.; Araya, M. C.; Arceneaux, C. C.; Areeda, J. S.; Arnaud, N.; Arun, K. G.; Ascenzi, S.; Ashton, G.; Ast, M.; Aston, S. M.; Astone, P.; Aufmuth, P.; Aulbert, C.; Babak, S.; Bacon, P.; Bader, M. K. M.; Baker, P. T.; Baldaccini, F.; Ballardin, G.; Ballmer, S. W.; Barayoga, J. C.; Barclay, S. E.; Barish, B. C.; Barker, D.; Barone, F.; Barr, B.; Barsotti, L.; Barsuglia, M.; Barta, D.; Bartlett, J.; Bartos, I.; Bassiri, R.; Basti, A.; Batch, J. C.; Baune, C.; Bavigadda, V.; Bazzan, M.; Bejger, M.; Bell, A. S.; Berger, B. K.; Bergmann, G.; Berry, C. P. L.; Bersanetti, D.; Bertolini, A.; Betzwieser, J.; Bhagwat, S.; Bhandare, R.; Bilenko, I. A.; Billingsley, G.; Birch, J.; Birney, R.; Birnholtz, O.; Biscans, S.; Bisht, A.; Bitossi, M.; Biwer, C.; Bizouard, M. A.; Blackburn, J. K.; Blair, C. D.; Blair, D. G.; Blair, R. M.; Bloemen, S.; Bock, O.; Boer, M.; Bogaert, G.; Bogan, C.; Bohe, A.; Bond, C.; Bondu, F.; Bonnand, R.; Boom, B. A.; Bork, R.; Boschi, V.; Bose, S.; Bouffanais, Y.; Bozzi, A.; Bradaschia, C.; Brady, P. R.; Braginsky, V. B.; Branchesi, M.; Brau, J. E.; Briant, T.; Brillet, A.; Brinkmann, M.; Brisson, V.; Brockill, P.; Broida, J. E.; Brooks, A. F.; Brown, D. A.; Brown, D. D.; Brown, N. M.; Brunett, S.; Buchanan, C. C.; Buikema, A.; Bulik, T.; Bulten, H. J.; Buonanno, A.; Buskulic, D.; Buy, C.; Byer, R. L.; Cabero, M.; Cadonati, L.; Cagnoli, G.; Cahillane, C.; Calderón Bustillo, J.; Callister, T.; Calloni, E.; Camp, J. B.; Cannon, K. C.; Cao, J.; Capano, C. D.; Capocasa, E.; Carbognani, F.; Caride, S.; Casanueva Diaz, J.; Casentini, C.; Caudill, S.; Cavaglià, M.; Cavalier, F.; Cavalieri, R.; Cella, G.; Cepeda, C. B.; Cerboni Baiardi, L.; Cerretani, G.; Cesarini, E.; Chamberlin, S. J.; Chan, M.; Chao, S.; Charlton, P.; Chassande-Mottin, E.; Cheeseboro, B. D.; Chen, H. Y.; Chen, Y.; Cheng, C.; Chincarini, A.; Chiummo, A.; Cho, H. S.; Cho, M.; Chow, J. H.; Christensen, N.; Chu, Q.; Chua, S.; Chung, S.; Ciani, G.; Clara, F.; Clark, J. A.; Cleva, F.; Coccia, E.; Cohadon, P.-F.; Colla, A.; Collette, C. G.; Cominsky, L.; Constancio, M.; Conte, A.; Conti, L.; Cook, D.; Corbitt, T. R.; Cornish, N.; Corsi, A.; Cortese, S.; Costa, C. A.; Coughlin, M. W.; Coughlin, S. B.; Coulon, J.-P.; Countryman, S. T.; Couvares, P.; Cowan, E. E.; Coward, D. M.; Cowart, M. J.; Coyne, D. C.; Coyne, R.; Craig, K.; Creighton, J. D. E.; Cripe, J.; Crowder, S. G.; Cumming, A.; Cunningham, L.; Cuoco, E.; Dal Canton, T.; Danilishin, S. L.; D'Antonio, S.; Danzmann, K.; Darman, N. S.; Dasgupta, A.; Da Silva Costa, C. F.; Dattilo, V.; Dave, I.; Davier, M.; Davies, G. S.; Daw, E. J.; Day, R.; De, S.; DeBra, D.; Debreczeni, G.; Degallaix, J.; De Laurentis, M.; Deléglise, S.; Del Pozzo, W.; Denker, T.; Dent, T.; Dergachev, V.; De Rosa, R.; DeRosa, R. T.; DeSalvo, R.; Devine, R. C.; Dhurandhar, S.; Díaz, M. C.; Di Fiore, L.; Di Giovanni, M.; Di Girolamo, T.; Di Lieto, A.; Di Pace, S.; Di Palma, I.; Di Virgilio, A.; Dolique, V.; Donovan, F.; Dooley, K. L.; Doravari, S.; Douglas, R.; Downes, T. P.; Drago, M.; Drever, R. W. P.; Driggers, J. C.; Ducrot, M.; Dwyer, S. E.; Edo, T. B.; Edwards, M. C.; Effler, A.; Eggenstein, H.-B.; Ehrens, P.; Eichholz, J.; Eikenberry, S. S.; Engels, W.; Essick, R. C.; Etzel, T.; Evans, M.; Evans, T. M.; Everett, R.; Factourovich, M.; Fafone, V.; Fair, H.; Fairhurst, S.; Fan, X.; Fang, Q.; Farinon, S.; Farr, B.; Farr, W. M.; Favata, M.; Fays, M.; Fehrmann, H.; Fejer, M. M.; Fenyvesi, E.; Ferrante, I.; Ferreira, E. C.; Ferrini, F.; Fidecaro, F.; Fiori, I.; Fiorucci, D.; Fisher, R. P.; Flaminio, R.; Fletcher, M.; Fong, H.; Fournier, J.-D.; Frasca, S.; Frasconi, F.; Frei, Z.; Freise, A.; Frey, R.; Frey, V.; Fritschel, P.; Frolov, V. V.; Fulda, P.; Fyffe, M.; Gabbard, H. A. G.; Gair, J. R.; Gammaitoni, L.; Gaonkar, S. G.; Garufi, F.; Gaur, G.; Gehrels, N.; Gemme, G.; Geng, P.; Genin, E.; Gennai, A.; George, J.; Gergely, L.; Germain, V.; Ghosh, Abhirup; Ghosh, Archisman; Ghosh, S.; Giaime, J. A.; Giardina, K. D.; Giazotto, A.; Gill, K.; Glaefke, A.; Goetz, E.; Goetz, R.; Gondan, L.; González, G.; Gonzalez Castro, J. M.; Gopakumar, A.; Gordon, N. A.; Gorodetsky, M. L.; Gossan, S. E.; Gosselin, M.; Gouaty, R.; Grado, A.; Graef, C.; Graff, P. B.; Granata, M.; Grant, A.; Gras, S.; Gray, C.; Greco, G.; Green, A. C.; Groot, P.; Grote, H.; Grunewald, S.; Guidi, G. M.; Guo, X.; Gupta, A.; Gupta, M. K.; Gushwa, K. E.; Gustafson, E. K.; Gustafson, R.; Hacker, J. J.; Hall, B. R.; Hall, E. D.; Hamilton, H.; Hammond, G.; Haney, M.; Hanke, M. M.; Hanks, J.; Hanna, C.; Hannam, M. D.; Hanson, J.; Hardwick, T.; Harms, J.; Harry, G. M.; Harry, I. W.; Hart, M. J.; Hartman, M. T.; Haster, C.-J.; Haughian, K.; Healy, J.; Heidmann, A.; Heintze, M. C.; Heitmann, H.; Hello, P.; Hemming, G.; Hendry, M.; Heng, I. S.; Hennig, J.; Henry, J.; Heptonstall, A. W.; Heurs, M.; Hild, S.; Hoak, D.; Hofman, D.; Holt, K.; Holz, D. E.; Hopkins, P.; Hough, J.; Houston, E. A.; Howell, E. J.; Hu, Y. M.; Huang, S.; Huerta, E. A.; Huet, D.; Hughey, B.; Husa, S.; Huttner, S. H.; Huynh-Dinh, T.; Indik, N.; Ingram, D. R.; Inta, R.; Isa, H. N.; Isac, J.-M.; Isi, M.; Isogai, T.; Iyer, B. R.; Izumi, K.; Jacqmin, T.; Jang, H.; Jani, K.; Jaranowski, P.; Jawahar, S.; Jian, L.; Jiménez-Forteza, F.; Johnson, W. W.; Johnson-McDaniel, N. K.; Jones, D. I.; Jones, R.; Jonker, R. J. G.; Ju, L.; K, Haris; Kalaghatgi, C. V.; Kalogera, V.; Kandhasamy, S.; Kang, G.; Kanner, J. B.; Kapadia, S. J.; Karki, S.; Karvinen, K. S.; Kasprzack, M.; Katsavounidis, E.; Katzman, W.; Kaufer, S.; Kaur, T.; Kawabe, K.; Kéfélian, F.; Kehl, M. S.; Keitel, D.; Kelley, D. B.; Kells, W.; Kennedy, R.; Key, J. S.; Khalili, F. Y.; Khan, I.; Khan, S.; Khan, Z.; Khazanov, E. A.; Kijbunchoo, N.; Kim, Chi-Woong; Kim, Chunglee; Kim, J.; Kim, K.; Kim, N.; Kim, W.; Kim, Y.-M.; Kimbrell, S. J.; King, E. J.; King, P. J.; Kissel, J. S.; Klein, B.; Kleybolte, L.; Klimenko, S.; Koehlenbeck, S. M.; Koley, S.; Kondrashov, V.; Kontos, A.; Korobko, M.; Korth, W. Z.; Kowalska, I.; Kozak, D. B.; Kringel, V.; Krishnan, B.; Królak, A.; Krueger, C.; Kuehn, G.; Kumar, P.; Kumar, R.; Kuo, L.; Kutynia, A.; Lackey, B. D.; Landry, M.; Lange, J.; Lantz, B.; Lasky, P. D.; Laxen, M.; Lazzarini, A.; Lazzaro, C.; Leaci, P.; Leavey, S.; Lebigot, E. O.; Lee, C. H.; Lee, H. K.; Lee, H. M.; Lee, K.; Lenon, A.; Leonardi, M.; Leong, J. R.; Leroy, N.; Letendre, N.; Levin, Y.; Lewis, J. B.; Li, T. G. F.; Libson, A.; Littenberg, T. B.; Lockerbie, N. A.; Lombardi, A. L.; London, L. T.; Lord, J. E.; Lorenzini, M.; Loriette, V.; Lormand, M.; Losurdo, G.; Lough, J. D.; Lousto, C. O.; Lück, H.; Lundgren, A. P.; Lynch, R.; Ma, Y.; Machenschalk, B.; MacInnis, M.; Macleod, D. M.; Magaña-Sandoval, F.; Magaña Zertuche, L.; Magee, R. M.; Majorana, E.; Maksimovic, I.; Malvezzi, V.; Man, N.; Mandel, I.; Mandic, V.; Mangano, V.; Mansell, G. L.; Manske, M.; Mantovani, M.; Marchesoni, F.; Marion, F.; Márka, S.; Márka, Z.; Markosyan, A. S.; Maros, E.; Martelli, F.; Martellini, L.; Martin, I. W.; Martynov, D. V.; Marx, J. N.; Mason, K.; Masserot, A.; Massinger, T. J.; Masso-Reid, M.; Mastrogiovanni, S.; Matichard, F.; Matone, L.; Mavalvala, N.; Mazumder, N.; McCarthy, R.; McClelland, D. E.; McCormick, S.; McGuire, S. C.; McIntyre, G.; McIver, J.; McManus, D. J.; McRae, T.; McWilliams, S. T.; Meacher, D.; Meadors, G. D.; Meidam, J.; Melatos, A.; Mendell, G.; Mercer, R. A.; Merilh, E. L.; Merzougui, M.; Meshkov, S.; Messenger, C.; Messick, C.; Metzdorff, R.; Meyers, P. M.; Mezzani, F.; Miao, H.; Michel, C.; Middleton, H.; Mikhailov, E. E.; Milano, L.; Miller, A. L.; Miller, A.; Miller, B. B.; Miller, J.; Millhouse, M.; Minenkov, Y.; Ming, J.; Mirshekari, S.; Mishra, C.; Mitra, S.; Mitrofanov, V. P.; Mitselmakher, G.; Mittleman, R.; Moggi, A.; Mohan, M.; Mohapatra, S. R. P.; Montani, M.; Moore, B. C.; Moore, C. J.; Moraru, D.; Moreno, G.; Morriss, S. R.; Mossavi, K.; Mours, B.; Mow-Lowry, C. M.; Mueller, G.; Muir, A. W.; Mukherjee, Arunava; Mukherjee, D.; Mukherjee, S.; Mukund, N.; Mullavey, A.; Munch, J.; Murphy, D. J.; Murray, P. G.; Mytidis, A.; Nardecchia, I.; Naticchioni, L.; Nayak, R. K.; Nedkova, K.; Nelemans, G.; Nelson, T. J. N.; Neri, M.; Neunzert, A.; Newton, G.; Nguyen, T. T.; Nielsen, A. B.; Nissanke, S.; Nitz, A.; Nocera, F.; Nolting, D.; Normandin, M. E. N.; Nuttall, L. K.; Oberling, J.; Ochsner, E.; O'Dell, J.; Oelker, E.; Ogin, G. H.; Oh, J. J.; Oh, S. H.; Ohme, F.; Oliver, M.; Oppermann, P.; Oram, Richard J.; O'Reilly, B.; O'Shaughnessy, R.; Ottaway, D. J.; Overmier, H.; Owen, B. J.; Pai, A.; Pai, S. A.; Palamos, J. R.; Palashov, O.; Palomba, C.; Pal-Singh, A.; Pan, H.; Pankow, C.; Pannarale, F.; Pant, B. C.; Paoletti, F.; Paoli, A.; Papa, M. A.; Paris, H. R.; Parker, W.; Pascucci, D.; Pasqualetti, A.; Passaquieti, R.; Passuello, D.; Patricelli, B.; Patrick, Z.; Pearlstone, B. L.; Pedraza, M.; Pedurand, R.; Pekowsky, L.; Pele, A.; Penn, S.; Perreca, A.; Perri, L. M.; Pfeiffer, H. P.; Phelps, M.; Piccinni, O. J.; Pichot, M.; Piergiovanni, F.; Pierro, V.; Pillant, G.; Pinard, L.; Pinto, I. M.; Pitkin, M.; Poe, M.; Poggiani, R.; Popolizio, P.; Post, A.; Powell, J.; Prasad, J.; Predoi, V.; Prestegard, T.; Price, L. R.; Prijatelj, M.; Principe, M.; Privitera, S.; Prix, R.; Prodi, G. A.; Prokhorov, L.; Puncken, O.; Punturo, M.; Puppo, P.; Pürrer, M.; Qi, H.; Qin, J.; Qiu, S.; Quetschke, V.; Quintero, E. A.; Quitzow-James, R.; Raab, F. J.; Rabeling, D. S.; Radkins, H.; Raffai, P.; Raja, S.; Rajan, C.; Rakhmanov, M.; Rapagnani, P.; Raymond, V.; Razzano, M.; Re, V.; Read, J.; Reed, C. M.; Regimbau, T.; Rei, L.; Reid, S.; Reitze, D. H.; Rew, H.; Reyes, S. D.; Ricci, F.; Riles, K.; Rizzo, M.; Robertson, N. A.; Robie, R.; Robinet, F.; Rocchi, A.; Rolland, L.; Rollins, J. G.; Roma, V. J.; Romano, J. D.; Romano, R.; Romanov, G.; Romie, J. H.; Rosińska, D.; Rowan, S.; Rüdiger, A.; Ruggi, P.; Ryan, K.; Sachdev, S.; Sadecki, T.; Sadeghian, L.; Sakellariadou, M.; Salconi, L.; Saleem, M.; Salemi, F.; Samajdar, A.; Sammut, L.; Sanchez, E. J.; Sandberg, V.; Sandeen, B.; Sanders, J. R.; Sassolas, B.; Sathyaprakash, B. S.; Saulson, P. R.; Sauter, O. E. S.; Savage, R. L.; Sawadsky, A.; Schale, P.; Schilling, R.; Schmidt, J.; Schmidt, P.; Schnabel, R.; Schofield, R. M. S.; Schönbeck, A.; Schreiber, E.; Schuette, D.; Schutz, B. F.; Scott, J.; Scott, S. M.; Sellers, D.; Sengupta, A. S.; Sentenac, D.; Sequino, V.; Sergeev, A.; Setyawati, Y.; Shaddock, D. A.; Shaffer, T.; Shahriar, M. S.; Shaltev, M.; Shapiro, B.; Shawhan, P.; Sheperd, A.; Shoemaker, D. H.; Shoemaker, D. M.; Siellez, K.; Siemens, X.; Sieniawska, M.; Sigg, D.; Silva, A. D.; Singer, A.; Singer, L. P.; Singh, A.; Singh, R.; Singhal, A.; Sintes, A. M.; Slagmolen, B. J. J.; Smith, J. R.; Smith, N. D.; Smith, R. J. E.; Son, E. J.; Sorazu, B.; Sorrentino, F.; Souradeep, T.; Srivastava, A. K.; Staley, A.; Steinke, M.; Steinlechner, J.; Steinlechner, S.; Steinmeyer, D.; Stephens, B. C.; Stevenson, S. P.; Stone, R.; Strain, K. A.; Straniero, N.; Stratta, G.; Strauss, N. A.; Strigin, S.; Sturani, R.; Stuver, A. L.; Summerscales, T. Z.; Sun, L.; Sunil, S.; Sutton, P. J.; Swinkels, B. L.; Szczepańczyk, M. J.; Tacca, M.; Talukder, D.; Tanner, D. B.; Tápai, M.; Tarabrin, S. P.; Taracchini, A.; Taylor, R.; Theeg, T.; Thirugnanasambandam, M. P.; Thomas, E. G.; Thomas, M.; Thomas, P.; Thorne, K. A.; Thrane, E.; Tiwari, S.; Tiwari, V.; Tokmakov, K. V.; Toland, K.; Tomlinson, C.; Tonelli, M.; Tornasi, Z.; Torres, C. V.; Torrie, C. I.; Töyrä, D.; Travasso, F.; Traylor, G.; Trifirò, D.; Tringali, M. C.; Trozzo, L.; Tse, M.; Turconi, M.; Tuyenbayev, D.; Ugolini, D.; Unnikrishnan, C. S.; Urban, A. L.; Usman, S. A.; Vahlbruch, H.; Vajente, G.; Valdes, G.; Vallisneri, M.; van Bakel, N.; van Beuzekom, M.; van den Brand, J. F. J.; Van Den Broeck, C.; Vander-Hyde, D. C.; van der Schaaf, L.; van Heijningen, J. V.; van Veggel, A. A.; Vardaro, M.; Vass, S.; Vasúth, M.; Vaulin, R.; Vecchio, A.; Vedovato, G.; Veitch, J.; Veitch, P. J.; Venkateswara, K.; Verkindt, D.; Vetrano, F.; Viceré, A.; Vinciguerra, S.; Vine, D. J.; Vinet, J.-Y.; Vitale, S.; Vo, T.; Vocca, H.; Vorvick, C.; Voss, D. V.; Vousden, W. D.; Vyatchanin, S. P.; Wade, A. R.; Wade, L. E.; Wade, M.; Walker, M.; Wallace, L.; Walsh, S.; Wang, G.; Wang, H.; Wang, M.; Wang, X.; Wang, Y.; Ward, R. L.; Warner, J.; Was, M.; Weaver, B.; Wei, L.-W.; Weinert, M.; Weinstein, A. J.; Weiss, R.; Wen, L.; Weßels, P.; Westphal, T.; Wette, K.; Whelan, J. T.; Whiting, B. F.; Williams, R. D.; Williamson, A. R.; Willis, J. L.; Willke, B.; Wimmer, M. H.; Winkler, W.; Wipf, C. C.; Wittel, H.; Woan, G.; Woehler, J.; Worden, J.; Wright, J. L.; Wu, D. S.; Wu, G.; Yablon, J.; Yam, W.; Yamamoto, H.; Yancey, C. C.; Yu, H.; Yvert, M.; Zadrożny, A.; Zangrando, L.; Zanolin, M.; Zendri, J.-P.; Zevin, M.; Zhang, L.; Zhang, M.; Zhang, Y.; Zhao, C.; Zhou, M.; Zhou, Z.; Zhu, X. J.; Zucker, M. E.; Zuraw, S. E.; Zweizig, J.; Boyle, M.; Hemberger, D.; Kidder, L. E.; Lovelace, G.; Ossokine, S.; Scheel, M.; Szilagyi, B.; Teukolsky, S.; LIGO Scientific Collaboration; VIRGO Collaboration

    2016-06-01

    We report the observation of a gravitational-wave signal produced by the coalescence of two stellar-mass black holes. The signal, GW151226, was observed by the twin detectors of the Laser Interferometer Gravitational-Wave Observatory (LIGO) on December 26, 2015 at 03:38:53 UTC. The signal was initially identified within 70 s by an online matched-filter search targeting binary coalescences. Subsequent off-line analyses recovered GW151226 with a network signal-to-noise ratio of 13 and a significance greater than 5 σ . The signal persisted in the LIGO frequency band for approximately 1 s, increasing in frequency and amplitude over about 55 cycles from 35 to 450 Hz, and reached a peak gravitational strain of 3. 4-0.9+0.7×10-22 . The inferred source-frame initial black hole masses are 14.2-3.7+8.3 M⊙ and 7. 5-2.3+2.3 M⊙, and the final black hole mass is 20.8-1.7+6.1 M⊙. We find that at least one of the component black holes has spin greater than 0.2. This source is located at a luminosity distance of 44 0-190+180 Mpc corresponding to a redshift of 0.0 9-0.04+0.03. All uncertainties define a 90% credible interval. This second gravitational-wave observation provides improved constraints on stellar populations and on deviations from general relativity.

  17. Fast and Accurate Prediction of Numerical Relativity Waveforms from Binary Black Hole Coalescences Using Surrogate Models.

    Science.gov (United States)

    Blackman, Jonathan; Field, Scott E; Galley, Chad R; Szilágyi, Béla; Scheel, Mark A; Tiglio, Manuel; Hemberger, Daniel A

    2015-09-18

    Simulating a binary black hole coalescence by solving Einstein's equations is computationally expensive, requiring days to months of supercomputing time. Using reduced order modeling techniques, we construct an accurate surrogate model, which is evaluated in a millisecond to a second, for numerical relativity (NR) waveforms from nonspinning binary black hole coalescences with mass ratios in [1, 10] and durations corresponding to about 15 orbits before merger. We assess the model's uncertainty and show that our modeling strategy predicts NR waveforms not used for the surrogate's training with errors nearly as small as the numerical error of the NR code. Our model includes all spherical-harmonic _{-2}Y_{ℓm} waveform modes resolved by the NR code up to ℓ=8. We compare our surrogate model to effective one body waveforms from 50M_{⊙} to 300M_{⊙} for advanced LIGO detectors and find that the surrogate is always more faithful (by at least an order of magnitude in most cases).

  18. Mixing efficiency inside micro-droplets coalesced by two components in cross-structure

    Science.gov (United States)

    Ren, Yanlin; Liu, Zhaomiao; Pang, Yan

    2017-11-01

    The mixing of micro-droplets is used in analytical chemistry, medicine production and material synthesis owing to its advantages including the encapsulation and narrow time residence distribution. In this work, droplets are coalesced by two dispersed phase with different flow rates, generated in cross-structure and mixed in planar serpentine structure. The mixing efficiency of micro-droplets under control characters including the width of entrance and the flow rate of dispersed phases have been investigated by experiments and numerical simulations. The UDS (user-defined scalar) as dimensionless concentration of the solution is adopted in simulation, and is used to calculate the concentration and the mixing effect. By changing the flow rates and the entrances` width, the changing rules of the mixing characters have been obtained. The asymmetry distributions of components make rapid mixing process in half part of each droplet when travel through a straight channel. Increasing of the ratio of entrance width result into larger droplet and weaken the chaotic mixing effect. Meanwhile, the coalesced mechanism can be performed by ranging the ratio of flow rates, the ranges are also determined by the widths of entrances. The authors gratefully acknowledge the support of National Natural Science Foundation of China (Grant No. 11572013).

  19. Hypernuclei, dibaryon and antinuclei production in high energy heavy ion collisions: Thermal production vs. coalescence

    International Nuclear Information System (INIS)

    Steinheimer, J.; Gudima, K.; Botvina, A.; Mishustin, I.; Bleicher, M.; Stöcker, H.

    2012-01-01

    We study the production of (hyper-)nuclei and dibaryons in most central heavy ion collisions at energies of E lab =1-160 A GeV. In particular we are interested in clusters produced from the hot and dense fireball. The formation rate of strange and non-strange clusters is estimated by assuming thermal production from the intermediate phase of the UrQMD-hydro hybrid model and alternatively by the coalescence mechanism from a hadronic cascade model. Both model types are compared in detail. For most energies we find that both approaches agree in their predictions for the yields of the clusters. Only for very low beam energies, and for dibaryons including Ξ's, we observe considerable differences. We also study the production of anti-matter clusters up to top RHIC energies and show that the observation of anti- 4 He and even anti- 4 Λ He is feasible. We have found a considerable qualitative difference in the energy dependence of the strangeness population factor R H when comparing the thermal production with the coalescence results.

  20. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

    International Nuclear Information System (INIS)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-01-01

    Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

  1. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-02-08

    Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

  2. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    Science.gov (United States)

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  3. Essays on partial retirement

    NARCIS (Netherlands)

    Kantarci, T.

    2012-01-01

    The five essays in this dissertation address a range of topics in the micro-economic literature on partial retirement. The focus is on the labor market behavior of older age groups. The essays examine the economic and non-economic determinants of partial retirement behavior, the effect of partial

  4. Revisiting the time until fixation of a neutral mutant in a finite population - A coalescent theory approach.

    Science.gov (United States)

    Greenbaum, Gili

    2015-09-07

    Evaluation of the time scale of the fixation of neutral mutations is crucial to the theoretical understanding of the role of neutral mutations in evolution. Diffusion approximations of the Wright-Fisher model are most often used to derive analytic formulations of genetic drift, as well as for the time scales of the fixation of neutral mutations. These approximations require a set of assumptions, most notably that genetic drift is a stochastic process in a continuous allele-frequency space, an assumption appropriate for large populations. Here equivalent approximations are derived using a coalescent theory approach which relies on a different set of assumptions than the diffusion approach, and adopts a discrete allele-frequency space. Solutions for the mean and variance of the time to fixation of a neutral mutation derived from the two approaches converge for large populations but slightly differ for small populations. A Markov chain analysis of the Wright-Fisher model for small populations is used to evaluate the solutions obtained, showing that both the mean and the variance are better approximated by the coalescent approach. The coalescence approximation represents a tighter upper-bound for the mean time to fixation than the diffusion approximation, while the diffusion approximation and coalescence approximation form an upper and lower bound, respectively, for the variance. The converging solutions and the small deviations of the two approaches strongly validate the use of diffusion approximations, but suggest that coalescent theory can provide more accurate approximations for small populations. Copyright © 2015 Elsevier Ltd. All rights reserved.

  5. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

    2018-01-01

    . The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common-mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L......In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices...... are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four-layer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained...

  6. GaN nano-membrane for optoelectronic and electronic device applications

    KAUST Repository

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  7. 380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

    International Nuclear Information System (INIS)

    Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

    2008-01-01

    The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

  8. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  9. Electronic structure and optical properties of Al and Mg co-doped GaN

    International Nuclear Information System (INIS)

    Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

    2013-01-01

    The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

  10. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    International Nuclear Information System (INIS)

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-01-01

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

  11. Effects of hydrogen on Mn-doped GaN: A first principles calculation

    International Nuclear Information System (INIS)

    Wu, M.S.; Xu, B.; Liu, G.; Lei, X.L.; Ouyang, C.Y.

    2013-01-01

    First-principles calculations based on spin density functional theory are performed to study the effects of H on the structural, electronic and magnetic properties of the Mn-doped GaN dilute magnetic semiconductors. Our results show that the interstitial H atom prefers to bond with N atom rather than Mn atom, which means that H favors to form the N–H complex rather than Mn–H complex in the Mn-doped GaN. After introducing one H atom in the system, the total magnetic moment of the Mn-doped GaN increases by 25%, from 4.0μ B to 5.0μ B . The physics mechanism of the increase of magnetic moment after hydrogenation in Mn-doped GaN is discussed

  12. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  13. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

  14. Study on the influence of annealing effects in GaN VPE

    International Nuclear Information System (INIS)

    Furtado, M.

    1983-06-01

    The effects of annealing that occur during VPE growth of GaN were investigated. GaN powder (and epilayers) samples were annealed in Ar, N 2 , H 2 , NH 3 , HC1 + N 2 and HC1 + H 2 (N 2 , H 2 and HC1 + N 2 ), respectively; under a range of experimental conditions of interest for preparing electroluminescent devices. Good surface appearence Zn doped epilayers were also used under N 2 in order to investigate surface morphology changes due to thermal decomposition. It was found that GaN reacts with H 2 , remains stable under NH 3 , and the effects of thermal decomposition are somewhat enhanced with HC1. The epilayers' behaviour under thermal decomposition and HC1 are interpreted by the greater stability of the (0001) crystal plane, which accounts for the improvement of the surface quality under special growth conditions. Significant observations are reported concerning GaN decomposition in different ambients [pt

  15. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

  16. Development of Epitaxial GaN Films for RF Communications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach...

  17. Efficient light extraction from GaN LEDs using gold-coated ZnO nanoparticles

    KAUST Repository

    Alhadidi, A.

    2015-11-01

    We experimentally demonstrate the effect of depositing gold-coated ZnO nanoparticles on the surface of GaN multi-quantum well LED structures. We show that this method can significantly increase the amount of extracted light.

  18. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    International Nuclear Information System (INIS)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-01-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer. (paper)

  19. N-polar GaN epitaxy and high electron mobility transistors

    International Nuclear Information System (INIS)

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  20. Tuning electronic and magnetic properties of GaN nanosheets by surface modifications and nanosheet thickness.

    Science.gov (United States)

    Xiao, Meixia; Yao, Tingzhen; Ao, Zhimin; Wei, Peng; Wang, Danghui; Song, Haiyang

    2015-04-14

    Density-functional theory calculations are performed to investigate the effects of surface modifications and nanosheet thickness on the electronic and magnetic properties of gallium nitride (GaN) nanosheets (NSs). Unlike the bare GaN NSs terminating with polar surfaces, the systems with hydrogenated Ga (H-GaN), fluorinated Ga (F-GaN), and chlorinated Ga (Cl-GaN) preserve their initial wurtzite structures and exhibit ferromagnetic states. The abovementioned three different decorations on Ga atoms are energetically more favorable for thicker GaN NSs. Moreover, as the thickness increases, H-GaN and F-GaN NSs undergo semiconductor to metal and half-metal to metal transition, respectively, while Cl-GaN NSs remain completely metallic. The predicted diverse and tunable electronic and magnetic properties highlight the potential of GaN NSs for novel electronic and spintronic nanodevices.

  1. Thermal Modeling of GaN HEMTs on Sapphire and Diamond

    National Research Council Canada - National Science Library

    Salm, III, Roman P

    2005-01-01

    Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN...

  2. Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study

    National Research Council Canada - National Science Library

    Sitar, Zlatko; Collazo, Ramon

    2007-01-01

    This report describes exploratory studies in the fabrication of the GaN LPH structures and their application in the fabrication of a depletion-mode metal semiconductor field effect transistors (MESFETs...

  3. Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

    National Research Council Canada - National Science Library

    Steckl, Andrew

    2006-01-01

    Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

  4. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

    National Research Council Canada - National Science Library

    Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

    2002-01-01

    The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

  5. Effect of Optical Excitation Energy on the Red Luminescence of Eu(3+) in GaN

    National Research Council Canada - National Science Library

    Peng, H. Y; Lee, C. W; Everitt, H. O; Lee, D. S; Steckl, A. J; Zavada, J. M

    2005-01-01

    ...)] transition from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient...

  6. THE PHOTOELECTROCHEMICAL ETCHING AS A TOOL FOR GaN GAS SENSOR FABRICATION

    OpenAIRE

    V.Iu. Popa

    2005-01-01

    Whisker and columnar structures of GaN were fabricated using photoelectrochemical etching in KOH solution. The conductivity changes of the obtained structures to ethylic alcohol and hydrogen were studied. Optimized design for sensor fabrication is proposed.

  7. Energy Assisted Epitaxy of GaN Using a Low Flux Nitrogen Atom Source

    National Research Council Canada - National Science Library

    Myers, Thomas

    1997-01-01

    .... The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth in GaN, a strategic material, in addition to training many students...

  8. Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ooi, Boon S.; Shen, Chao; Anjum, Dalaver H.; San-Romá n-Alerigi, Damiá n P.; Ng, Tien Khee

    2013-01-01

    We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed

  9. Surface chemistry and electronic structure of nonpolar and polar GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

    2015-08-01

    Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

  10. Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Amano, Hiroshi [Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502 (Japan)

    2011-05-15

    Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphology of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al{sub 0.28}Ga{sub 0.72}N layer by the metal-organic vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphology of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of ''climb motion''. Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in analysis of thin-layer growth through the behavior of TDs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Flexible GaN for High Performance, Strainable Radio Frequency Devices (Postprint)

    Science.gov (United States)

    2017-11-02

    wireless systems where consumers will benefit significantly from the high power densities achievable in GaN devices.[8] Further complicating the...future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication... power density of traditional RF amplifier materials at different frequencies and wireless generation bands, as well as an image of the flexible GaN

  12. Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

    OpenAIRE

    Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

    2013-01-01

    We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

  13. Characterization of an Mg-implanted GaN p-i-n Diode

    Science.gov (United States)

    2016-03-31

    Characterization of an Mg- implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J...Kub Naval Research Laboratory, Washington, DC 20375 Abstract: A p-i-n diode formed by the implantation of Mg in GaN was fabricated and...characterized. After implantation , Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C

  14. Identification of deep levels in GaN associated with dislocations

    International Nuclear Information System (INIS)

    Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

    2004-01-01

    To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

  15. P- and N-type implantation doping of GaN with Ca and O

    International Nuclear Information System (INIS)

    Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

    1996-01-01

    III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C

  16. GaN quantum dots: from basic understanding to unique applications

    International Nuclear Information System (INIS)

    Pelekanos, N T; Dialynas, G E; Simon, J; Mariette, H; Daudin, B

    2005-01-01

    The GaN self-assembled quantum dots constitute a very special and intriguing type of semiconductor nanostructure, mainly because they carry in their structure a giant internal electric field that can reach a value up to 7 MV/cm. In this report, we review the most important structural and optical properties of GaN quantum dots, and we discuss their advantages and limitations for blue-UV optoelectronic applications. (invited paper)

  17. Influence of ammonia flow rate for improving properties of polycrystalline GaN

    Science.gov (United States)

    Ariff, A.; Ahmad, M. A.; Hassan, Z.; Zainal, N.

    2018-06-01

    Post-annealing treatment in ammonia ambient is widely accepted for GaN material, but less works have been done to investigate the influence of the ammonia (NH3) flow rate for reducing the N-deficiency as well as improving the quality of the material. In this work, we investigated the influence of NH3 flow rate at 1, 2, 3, and 4 slm in improving properties of a ∼1 μm thick polycrystalline GaN layer. Our simulation work suggested that the uniformity of temperature and pressure gradient of the NH3 gas did not lead to the reduction of N-deficiency of the polycrystalline GaN layer. Instead, it was found that the mitigation of the N-deficiency was strongly influenced by the fluid velocity of the NH3 gas, which had passed over the layer. Either at lower or higher fluid velocity, the chance for the active N atoms to incorporate into the GaN lattice structure was low. Therefore, the N-deficiency on the polycrystalline GaN layer could not be minimized under these conditions. As measured by EDX, the N atoms incorporation was the most effective when the NH3 flow rate at 3 slm, suggesting the flow rate significantly improved the N-deficiency of the polycrystalline GaN layer. Furthermore, it favored the formation of larger hexagonal faceted grains, with the smallest FWHM of XRD peaks from the GaN diffractions in (10 1 bar 0), (0002) and (10 1 bar 1) orientations, while allowing the polycrystalline GaN layer to show sharp and intense emissions peak of NBE in a PL spectrum.

  18. GaN quantum dot polarity determination by X-ray photoelectron diffraction

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Bartoš, Igor; Brault, J.; De Mierry, P.; Paskova, T.; Jiříček, Petr

    2016-01-01

    Roč. 389, Dec (2016), s. 1156-1160 ISSN 0169-4332 R&D Projects: GA ČR GA15-01687S; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : GaN * semipolar GaN * quantum dots * X-ray photoelectron diffraction * surface polarity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

  19. Structural and optical properties of Si-doped GaN

    OpenAIRE

    Cremades Rodríguez, Ana Isabel; Gorgens, L.; Ambacher, O.; Stutzmann, M.; Scholz, F.

    2000-01-01

    Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements. The incorporation of silicon in the GaN films leads to pronounced tensile stress. The energy position of the neutral donor bound excitonic emission correlates with the measured stress. The stress...

  20. Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

    Science.gov (United States)

    2017-03-01

    QPSK LTE waveform, the ACPR1improved by ~10 dBc at average output power of 23 dBm, without digital pre-distortion. Keywords: GaN, linear amplifiers...wideband amplifier, OIP3, LTE Introduction RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier...wideband amplifiers remain. In this paper, we report on the measured CW performance of a multi-octave (100 MHz ‒ 8 GHz) GaN MMIC NDPA fabricated with

  1. Recurrent Partial Words

    Directory of Open Access Journals (Sweden)

    Francine Blanchet-Sadri

    2011-08-01

    Full Text Available Partial words are sequences over a finite alphabet that may contain wildcard symbols, called holes, which match or are compatible with all letters; partial words without holes are said to be full words (or simply words. Given an infinite partial word w, the number of distinct full words over the alphabet that are compatible with factors of w of length n, called subwords of w, refers to a measure of complexity of infinite partial words so-called subword complexity. This measure is of particular interest because we can construct partial words with subword complexities not achievable by full words. In this paper, we consider the notion of recurrence over infinite partial words, that is, we study whether all of the finite subwords of a given infinite partial word appear infinitely often, and we establish connections between subword complexity and recurrence in this more general framework.

  2. Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE

    International Nuclear Information System (INIS)

    Miyake, Hideto; Yamaguchi, Motoo; Haino, Masahiro

    2000-01-01

    A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window - 2/2 microm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure

  3. Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals.

    Science.gov (United States)

    Buckeridge, J; Catlow, C R A; Scanlon, D O; Keal, T W; Sherwood, P; Miskufova, M; Walsh, A; Woodley, S M; Sokol, A A

    2015-01-09

    We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

  4. Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

    International Nuclear Information System (INIS)

    Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

    2015-01-01

    We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

  5. Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals

    Science.gov (United States)

    Buckeridge, J.; Catlow, C. R. A.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Miskufova, M.; Walsh, A.; Woodley, S. M.; Sokol, A. A.

    2015-01-01

    We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p -type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

  6. Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

    Science.gov (United States)

    Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

    2018-05-01

    GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

  7. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Characterization of Solids Deposited on the Modular Caustic-Side Solvent Extraction Unit (MCU) Strip Effluent (SE) Coalescer Media Removed in April 2015

    Energy Technology Data Exchange (ETDEWEB)

    Fondeur, F. F. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2016-06-13

    On June 2015, Savannah River National Laboratory (SRNL) received a Strip Effluent (SE) coalescer (FLT-304) from MCU. That coalescer was first installed at MCU in late October 2014 and removed in April 2015. While processing approximately 48,700 gallons of strip solution, the pressure drop steadily increased linearly from 1 psi to near 16 psi (the administrative limit is 17 psi) with the total filtrate volume (2.1E-4 psi/gal of filtrate). The linear behavior is due to the combined effect of a constant deposition of material that starts from the closed-end to the mid-section of the coalescer reducing the available surface area of the coalescer for fluid passage (linearly with filtrate volume) and the formation of a secondary emulsion (water in NG-CSSX) on the fibers of the coalescer media. Both effects reduced the coalescer porosity by at least 13% (after processing 48,700 gallons). Before the coalescer was removed, it was flushed with a 10 mM boric acid solution to reduce the dose level. To determine the nature of the deposited material, a physical and chemical analysis of the coalescer was conducted. Characterization of this coalescer revealed the adsorption of organic containing amines (secondary amides and primary amines), TiDG, degraded modifier (with no hydroxyl group), MaxCalix, and oxidized hydrocarbon (possibly from Isopar™L or from lubricant used at MCU) onto the coalescer media. The amide and amines are possibly from the decomposition of the suppressor (TiDG). The modifier and MaxCalix were the largest components of the deposited organic material, as determined from leaching the coalescer with dichloromethane. Both the Fourier-Transformed Infrared (FTIR) and Fourier-Transformed Hydrogen Nuclear Magnetic Resonance (FT-HNMR) results indicated that some of the modifier was degraded (missing their OH groups). The modifier was observed everywhere in the examined coalescer pieces (FTIR), while the TiDG and its decomposition products were observed at the

  9. Search for gravitational waves from low mass compact binary coalescence in 186 days of LIGO's fifth science run

    International Nuclear Information System (INIS)

    Abbott, B. P.; Abbott, R.; Adhikari, R.; Anderson, S. B.; Araya, M.; Armandula, H.; Aso, Y.; Ballmer, S.; Barton, M. A.; Betzwieser, J.; Billingsley, G.; Black, E.; Blackburn, J. K.; Bork, R.; Boschi, V.; Brooks, A. F.; Cannon, K. C.; Cardenas, L.; Cepeda, C.; Chalermsongsak, T.

    2009-01-01

    We report on a search for gravitational waves from coalescing compact binaries, of total mass between 2 and 35M · , using LIGO observations between November 14, 2006 and May 18, 2007. No gravitational-wave signals were detected. We report upper limits on the rate of compact binary coalescence as a function of total mass. The LIGO cumulative 90%-confidence rate upper limits of the binary coalescence of neutron stars, black holes and black hole-neutron star systems are 1.4x10 -2 , 7.3x10 -4 and 3.6x10 -3 yr -1 L 10 -1 , respectively, where L 10 is 10 10 times the blue solar luminosity.

  10. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  11. Oxygen adsorption and incorporation at irradiated GaN(0001) and GaN(0001¯) surfaces: First-principles density-functional calculations

    Science.gov (United States)

    Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

    2006-11-01

    Density functional theory calculations of oxygen adsorption and incorporation at the polar GaN(0001) and GaN(0001¯) surfaces have been carried out to explain the experimentally observed reduced oxygen concentration in GaN samples grown by molecular beam epitaxy in the presence of high energy (˜10keV) electron beam irradiation [Myers , J. Vac. Sci. Technol. B 18, 2295 (2000)]. Using a model in which the effect of the irradiation is to excite electrons from the valence to the conduction band, we find that both the energy cost of incorporating oxygen impurities in deeper layers and the oxygen adatom diffusion barriers are significantly reduced in the presence of the excitation. The latter effect leads to a higher probability for two O adatoms to recombine and desorb, and thus to a reduced oxygen concentration in the irradiated samples, consistent with experimental observations.

  12. Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

    Science.gov (United States)

    Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

    2018-04-01

    Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

  13. Impact of substrate off-angle on the m-plane GaN Schottky diodes

    Science.gov (United States)

    Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

    2018-04-01

    We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward [000\\bar{1}]. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm-3) and carbon (>1016 cm-3) impurities. The residual carbon and oxygen impurities decreased to current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

  14. Semipolar GaN grown on m-plane sapphire using MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

    2008-07-01

    We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

  16. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Shih, Huan-Yu; Chen, Miin-Jang; Lin, Ming-Chih; Chen, Liang-Yih

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH 3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH 3 . The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. (paper)

  17. Synthesis of GaN Nanorods by a Solid-State Reaction

    Directory of Open Access Journals (Sweden)

    Keyan Bao

    2010-01-01

    Full Text Available An atom-economical and eco-friendly chemical synthetic route was developed to synthesize wurtzite GaN nanorods by the reaction of NaNH2 and the as-synthesized orthorhombic GaOOH nanorods in a stainless steel autoclave at 600∘C. The lengths of the GaN nanorods are in the range of 400–600 nm and the diameters are about 80–150 nm. The process of orthorhombic GaOOH nanorods transformation into wurtzite GaN nanorods was investigated by powder X-ray diffraction (XRD and field emission scanning electron microscope (FESEM, indicating that the GaN product retained essentially the same basic topological morphology in contrast to that of the GaOOH precursor. It was found that rhombohedral Ga2O3 was the intermediate between the starting orthorhombic GaOOH precursor and the final wurtzite GaN product. The photoluminescence measurements reveal that the as-prepared wurtzite GaN nanorods showed strong blue emission.

  18. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-12-01

    We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  19. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-12-01

    Full Text Available We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  20. Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Hongbin Cheng

    2015-01-01

    Full Text Available GaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires. The microstructure, composition, and photoluminescence property were characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra. The results showed that single crystalline GaN nanowires with the diameter of about 90 nm and the length up to tens of micrometers had been grown thickly across Si (100 substrates with uniform density. Moreover, the variations of the GaN nanowire morphology, density, and size were largely attributed to substrate positions which would influence Ga precursor density in the carrier gas, the saturation degree of gaseous reactants, and the catalyst activity, respectively, in the fabrication of GaN nanowires by the vapour liquid solid mechanism.