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Sample records for p-type transparent conductive

  1. P -type transparent conducting oxides

    International Nuclear Information System (INIS)

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-01-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

  2. Defect studies in copper-based p-type transparent conducting oxides

    Science.gov (United States)

    Ameena, Fnu

    Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

  3. Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

    2008-07-01

    P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19p-type TAO films could be obtained. Hole concentration as high as 4.03 x 10{sup 19} cm{sup -3} and electrical resistivity as low as 0.155 {omega}cm were achieved, showing potential applications of TAO films as p-type transparent conducting films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    Science.gov (United States)

    Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

    2012-07-01

    Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

  5. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    International Nuclear Information System (INIS)

    Huang Yanwei; Zhang Qun; Xi Junhua; Ji Zhenguo

    2012-01-01

    Transparent p-type Li 0.25 Ni 0.75 O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li 0.25 Ni 0.75 O/n-SnO 2 :W was fabricated by depositing n-SnO 2 :W on top of the p-Li 0.25 Ni 0.75 O, which exhibits typical rectifying current-voltage characteristics.

  6. p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

    Science.gov (United States)

    Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

    2015-08-05

    Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

  7. Evaluation of thermodynamic and kinetic stability of P-type transparent conducting oxide, SrCu2O2 under various oxygen partial pressures

    International Nuclear Information System (INIS)

    Sugimoto, Takayuki; Yanagawa, Atsumi; Hashimoto, Takuya

    2012-01-01

    Highlights: ▶ Thermodynamic and kinetic stabilities of SrCu 2 O 2 under various P(O 2 ) was estimated. ▶ The reaction rate for decomposition decreased with decreasing temperature and P(O 2 ). ▶ The activation energy for decomposition of SrCu 2 O 2 was estimated to be 66 kJ/mol. ▶ SrCu 2 O 2 showed less stability than those of other transparent p-type semiconductors. - Abstract: Kinetic stability of transparent p-type conducting oxide, SrCu 2 O 2 , has been evaluated by using X-ray diffraction measurement and thermogravimetry. It was revealed that SrCu 2 O 2 decomposed to mixture of CuO and Sr 14 Cu 24 O 41 in air at temperatures above 300 °C. The decomposition reaction rate can be successfully explained by kinetic model assuming first-order chemical reaction. The rate constant can be suppressed with decreasing temperature and oxygen partial pressure. The activation energy for decomposition reaction of SrCu 2 O 2 calculated from Arrhenius plot was 66 kJ/mol, which was lower than those of other transparent p-type semiconductors such as CuAlO 2 and CuGaO 2 . The low decomposition temperature and activation energy for decomposition indicate that chemical stability of SrCu 2 O 2 is far lower than those of other p-type conducting oxides.

  8. One-Step Process for High-Performance, Adhesive, Flexible Transparent Conductive Films Based on p-Type Reduced Graphene Oxides and Silver Nanowires.

    Science.gov (United States)

    Lai, Yi-Ting; Tai, Nyan-Hwa

    2015-08-26

    This work demonstrates a one-step process to synthesize uniformly dispersed hybrid nanomaterial containing silver nanowires (AgNWs) and p-type reduced graphene (p-rGO). The hybrid nanomaterial was coated onto a polyethylene terephthalate (PET) substrate for preparing high-performance flexible transparent conductive films (TCFs). The p-rGO plays the role of bridging discrete AgNWs, providing more electron holes and lowering the resistance of the contacted AgNWs; therefore, enhancing the electrical conductivity without sacrificing too much transparence of the TCFs. Additionally, the p-rGO also improves the adhesion between AgNWs and substrate by covering the AgNWs on the substrate tightly. The study shows that coating of the hybrid nanomaterials on the PET substrate demonstrates exceptional optoelectronic properties with a transmittance of 94.68% (at a wavelength of 550 nm) and a sheet resistance of 25.0 ± 0.8 Ω/sq. No significant variation in electric resistance can be detected even when the film was subjected to a bend loading with a radius of curvature of 5.0 mm or the film was loaded with a reciprocal tension or compression for 1000 cycles. Furthermore, both chemical corrosion resistance and haze effect were improved when p-rGO was introduced. The study shows that the fabricated flexible TCFs have the potential to replace indium tin oxide film in the optoelectronic industry.

  9. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-03-11

    Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

  10. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. High work function (p-type NiO{sub 1+x})/Zn{sub 0.95}Ga{sub 0.05}O heterostructures for transparent conducting oxides

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Titas; Gupta, Pranav; Gupta, Alok; Narayan, Jagdish, E-mail: titasdutta@gmail.co, E-mail: pranavid@gmail.co, E-mail: agupta10@ncsu.ed, E-mail: j_narayan@ncsu.ed [Department of Materials Science and Engineering, North Carolina State University, 3030C Engineering Building 1, 911 Partners Way, Raleigh, NC 27695 (United States)

    2010-03-17

    We report the growth and properties of heterostructure thin films consisting of a thin overlayer of p-NiO{sub 1+x} on Zn{sub 0.95}Ga{sub 0.05}O (GZO) by pulsed laser deposition for transparent electrode applications. The GZO films with a thin p-type NiO{sub 1+x} overlayer exhibited a higher work function. It is envisaged to facilitate hole injection across the heterojunction in a solid state device resulting in improved device efficiency. The crystalline quality of the bilayer films was investigated by x-ray diffraction. NiO{sub 1+x} overlayers showed the preferred orientation along the [1 1 1] direction on Zn{sub 0.95}Ga{sub 0.05}O (0 0 0 1) films deposited on a glass substrate while they were epitaxial when the substrate used was sapphire. The effects of the NiO{sub 1+x} overlayer thickness variation and Li doping on the electrical and optical properties of NiO{sub 1+x}/Zn{sub 0.95}Ga{sub 0.05}O bilayer films were also investigated. The bilayer films with an optimized overlayer thickness showed good optical transparency ({>=}85%) and low resistivity of {approx}10{sup -4} {Omega} cm up to temperatures as low as 100 K. Using x-ray photoelectron spectroscopy it has been established that nickel in NiO{sub 1+x} exists in multiple oxidation states of Ni{sup 2+} and Ni{sup 3+}. The presence of Ni{sup 3+} gives rise to p-type conductivity in non-stoichiometric NiO{sub 1+x}. Additionally, ultraviolet photoelectron spectroscopy studies showed that the bilayer films have high work function values ranging from 5.2 to 5.3 eV. A correlation between the surface work function and Ni{sup 3+}/Ni{sup 2+} ratio has also been established.

  12. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-01-01

    , the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s

  13. Optical and electrical properties of CuMO2 transparent p-type conductors

    Science.gov (United States)

    Draeseke, A. D.; Jayaraj, M. K.; Ulbrich, T.; Kroupp, M.; Tate, J.; Nagarajan, R.; Oblezov, A.; Sleight, A. W.

    2001-03-01

    Wide band gap oxides of the type CuMO2 with the delafossite structure are p-type conductors and many of them are transparent. Films of these p-type oxides have been grown by sputtering and thermal evaporation, and characterized electrically and optically. We present transport and optical transmission measurements for CuY_1-xCa_xO_2, CuScO_2+x and other similar materials. Conductivities are in the range 1 200 S/cm and depend on details of film preparation. The carriers are p-type as determined by thermopower measurements, and typical Seebeck coefficients are several hundred µV/K. Optical transparency varies considerably, but is about 40% at 550 nm for the highest conductivity films. Excellent transparency can be achieved at the expense of conductivity, and optimization is being studied. Band gaps derived from optical transmission are larger than 3.1 eV. Prototype all-oxide pn diodes have been fabricated. This work was partially supported by the NSF under DMR-0071727 and by the Research Corporation under RA0291.

  14. Transparent conducting oxide nanotubes

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

    2014-09-01

    Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

  15. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-01-01

    that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  16. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  17. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    International Nuclear Information System (INIS)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-01-01

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  18. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Energy Technology Data Exchange (ETDEWEB)

    Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

    2017-04-15

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  19. Limits of transparency of transparent conducting oxides

    Science.gov (United States)

    Peelaers, Hartwin

    A fundamental understanding of the factors that limit transparency in transparent conducting oxides (TCOs) is essential for further progress in materials and applications. These materials have a sufficiently large band gap, so that direct optical transitions do not lead to absorption of light within the visible spectrum. Since the presence of free carriers is essential for conductivity and thus for device applications, this introduces the possibility of additional absorption processes. In particular, indirect processes are possible, and these will constitute a fundamental limit of the material. The Drude theory is widely used to describe free-carrier absorption, but it is phenomenological in nature and tends to work poorly at shorter wavelengths, where band-structure effects are important. We will present calculations of phonon- and defect-assisted free-carrier absorption in a TCO completely from first principles. We will focus in detail on SnO2, but the methodology is general and we will also compare the results obtained for other TCO materials such as In2O3. These calculations provide not just quantitative results but also deeper insights in the mechanisms that govern absorption processes, which is essential for engineering improved materials to be used in more efficient devices. This work was performed in collaboration with E. Kioupakis and C.G. Van de Walle and was supported by ARO and NSF.

  20. Transparent Conductive Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-22

    The objectives of this program between UT-Battelle, LLC (the ''Contractor'') and (Battelle Memorial Institute) (the "Participant") were directed towards achieving significant improvement: in the electrical conductivity and optical/infrared transmission of single-wall carbon nanotube (SWNT)-based composite materials. These materials will be used in coating applications that range from aircraft canopies to display applications. The goal of the project was to obtain supported mats of SWNTs with sheet conductivities approaching 10 ohms/square combined with high optical transmission (>85% transmission at 550 nm), thereby permitting their application as a replacement for indium tin oxide (ITO) in a variety of applications such as flexible displays.

  1. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-06-25

    Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

  2. Easily doped p-type, low hole effective mass, transparent oxides

    Science.gov (United States)

    Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-02-01

    Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications - i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

  3. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  4. Change in the electrical conductivity of SnO2 crystal from n-type to p-type conductivity

    International Nuclear Information System (INIS)

    Villamagua, Luis; Stashans, Arvids; Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi; Carini, Manuela

    2015-01-01

    Highlights: • Switch from n-type to p-type conductivity in SnO 2 has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO 2 compound shows stable p-type conductivity. • Low resistivity (3.657 × 10 −1 Ω cm) has been obtained. • High carrier concentration (4.858 × 10 19 cm −3 ) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO 2 systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO 2 material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling

  5. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    KAUST Repository

    Hota, M. K.

    2014-04-14

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

  6. P-type zinc oxide spinels: application to transparent conductors and spintronics

    International Nuclear Information System (INIS)

    Stoica, Maria; S Lo, Cynthia

    2014-01-01

    We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB 2 O 4 , where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied p-type ZnCo 2 O 4 spinel. These new materials exhibit spin polarization, which is useful for spintronics applications, and broad conductivity maxima near the valence band edge that indicate good p-type dopability. We show that 3d electrons on the octahedrally coordinated Zn atom fall deep within the valence band and do not contribute significantly to the electronic structure near the band edge of the material, while the O 2p and tetrahedrally coordinated B 3d electrons hybridize broadly in the shallow valence states, resulting in increasing curvature (i.e., decreased electron effective mass) of valence bands near the band edge. In particular, ZnCu 2 O 4 exhibits high electrical conductivities in the p-doping region near the valence band edge that, at σ=2×10 4  S cm −1 , are twice the maximum found for ZnCo 2 O 4 , a previously synthesized compound in this class of materials. This material also exhibits ferromagnetism in all of its most stable structures, which makes it a good candidate for further study as a dilute magnetic semiconductor. (paper)

  7. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    KAUST Repository

    Hota, M. K.; Caraveo-Frescas, J. A.; McLachlan, M. A.; Alshareef, Husam N.

    2014-01-01

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up

  8. Nanostructured Transparent Conducting Oxides for Device Applications

    Science.gov (United States)

    Dutta, Titas

    2011-12-01

    Research on transparent conducting oxides (TCOs) alternative to indium tin oxide (ITO) has attracted a lot of attention due to the serious concern related to cost and chemical stability of indium tin oxide. The primary aim of this research is to develop low cost alternative transparent conducting oxides with an eye towards (1) increasing the organic solar cell efficiency and (2) fabricating transparent electronic devices utilizing p-type TCOs. To investigate the fundamental properties, the novel TCO films have been grown on sapphire and economical glass substrates using pulsed laser deposition (PLD) technique. The films were also grown under different deposition conditions in order to understand the effect of processing parameters on the film properties. The characteristics of the thin films have been investigated in detail using (X-ray diffraction, TEM, X-ray photoelectron spectroscopy (XPS), UV- photoelectron spectroscopy (UPS), four probe resistivity and UV-Vis transmittance measurements) in order to establish processing-structure-property correlation. ZnO doped with group III elements is a promising candidate because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function (4.4 eV, compared to that of 4.8 eV for ITO), which increases the energy barrier and affects the carrier transport across ZnGa0.05O/organic layer interface. To overcome this issue of ZnO based TCOs, the growth of bilayered structure consisting of very thin MoOx (2.0 target composition. These optimized bilayer films exhibited good optical transmittance (≥ 80%) and low resistivity of ˜ 10-4 O-cm. The optimized NiO1+x / GZO and MoOx / GZO bilayers showed significant increase in work function values (˜5.3 eV). The work function of the bilayer films was tuned by varying the processing conditions and doping of over layers. Preliminary test device results of the organic photovoltaic cells (OPVs

  9. Transparent conducting film: Effect of mechanical stretching

    Indian Academy of Sciences (India)

    We describe in this paper a transparent conducting film (TCF). ... conducting carbon nanotube film which is crack-resistant for solar cell applications. ... CA 90095, USA; Nanocomp Technologies, Inc, 162 Pembroke Road, Concord, NH 03301 ...

  10. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  11. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.; Alshareef, Husam N.

    2013-01-01

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p

  12. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso; Nayak, Pradipta K.; Al-Jawhari, Hala A.; Bianchi Granato, Danilo; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2013-01-01

    developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values

  13. Transparent conducting oxides and production thereof

    Science.gov (United States)

    Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

    2014-06-10

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  14. Theory of Persistent, P-Type, Metallic Conduction in C-GeTe

    National Research Council Canada - National Science Library

    Edwards, Arthur H; Pineda, Andrew C; Schultz, Peter A; Martin, Marcus G; Thompson, Aidan P; Hjalmarson, Harold P

    2005-01-01

    .... However, it always displays p-type metallic conduction. This behavior is also observed in other chalcogenide materials, including Ge2Sb2Te5, commonly used for optically and electrically switched, non-volatile memory, and so is or great interest...

  15. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  16. Transparent Conducting Oxides—An Up-To-Date Overview

    Directory of Open Access Journals (Sweden)

    Andreas Stadler

    2012-04-01

    Full Text Available Transparent conducting oxides (TCOs are electrical conductive materials with comparably low absorption of electromagnetic waves within the visible region of the spectrum. They are usually prepared with thin film technologies and used in opto-electrical apparatus such as solar cells, displays, opto-electrical interfaces and circuitries. Here, based on a modern database-system, aspects of up-to-date material selections and applications for transparent conducting oxides are sketched, and references for detailed information are given. As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO and the reasonably priced aluminum-doped zinc oxide (ZnO:Al, are discussed with view on preparation, characterization and special occurrences. For completion, the recently frequently mentioned typical p-type delafossite TCOs are described as well, providing a variety of references, as a detailed discussion is not reasonable within an overview publication.

  17. EDITORIAL: On display with transparent conducting films On display with transparent conducting films

    Science.gov (United States)

    Demming, Anna

    2012-03-01

    by a researcher in the early 1930s, 'It is obvious that if the dyes used for selective staining in ordinary microscopical work are supplemented by substances which cause a particular detail of the structure to fluoresce with a specific colour in ultraviolet light, then many strings will be added to the bow of the practical microscopist' [3]. More recently, emphasis on the role of plasmons—collective oscillations of electrons in nanoscale metal structures—has received considerable research attention. Plasmons enhance the local electromagnetic field and can lead to increased fluorescence rates from nearby fluorophores depending on the efficiency of the counteracting process, non-radiative transfer [4]. Flat ITO films have been used extensively in photovoltaic studies as transparent electrodes [5]. Over the past few years, nanowire structures have recently been used to increase the surface area of the interface between dye and oxide in dye-sensitized solar cells [6]. A collaboration of researchers in China and Australia has recently extended the innovation of the nanowire structure to the ITO electrode [7]. Using cyclic voltammetry the researchers confirmed that using a 3D ITO-nanowire electrode significantly enhanced the reaction current. Despite its attractive properties, alternatives to ITO are now in high demand. The rise in devices requiring flat electronic displays has begun to overwhelm the legitimacy of using such a rare element as indium for transparent conducting films. ITO is also brittle, causing problems for flexible displays. Films of carbon nanotubes have been proposed for transparent conducting films but improvements to the sheet resistance are needed before they can compete with the performance of ITO. The effects of HNO3 treatment on the resistivity of carbon nanotube films has attracted some debate in the community, and stimulated the work of Ji-Beom Yoo and colleagues in Korea [8]. Their results suggest that p-type doping has a larger effect on

  18. Printable Transparent Conductive Films for Flexible Electronics.

    Science.gov (United States)

    Li, Dongdong; Lai, Wen-Yong; Zhang, Yi-Zhou; Huang, Wei

    2018-03-01

    Printed electronics are an important enabling technology for the development of low-cost, large-area, and flexible optoelectronic devices. Transparent conductive films (TCFs) made from solution-processable transparent conductive materials, such as metal nanoparticles/nanowires, carbon nanotubes, graphene, and conductive polymers, can simultaneously exhibit high mechanical flexibility, low cost, and better photoelectric properties compared to the commonly used sputtered indium-tin-oxide-based TCFs, and are thus receiving great attention. This Review summarizes recent advances of large-area flexible TCFs enabled by several roll-to-roll-compatible printed techniques including inkjet printing, screen printing, offset printing, and gravure printing using the emerging transparent conductive materials. The preparation of TCFs including ink formulation, substrate treatment, patterning, and postprocessing, and their potential applications in solar cells, organic light-emitting diodes, and touch panels are discussed in detail. The rational combination of a variety of printed techniques with emerging transparent conductive materials is believed to extend the opportunities for the development of printed electronics within the realm of flexible electronics and beyond. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Transparent conducting materials: Overview and recent results

    NARCIS (Netherlands)

    Deelen, J. van; Illiberi, A.; Hovestad, A.; Barbu, I.; Klerk, L.; Buskens, P.

    2012-01-01

    An overview of different transparent conductors is given. In addition, atmospheric pressure CVD of ZnO resulted in conductivities below 1 mΩ cm for a temperature of 480°C, whereas at a process temperature of 200°C a value of 2 mΩ cm was obtained. Also atmospheric pressure spatial ALD was used to

  20. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Science.gov (United States)

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  1. Change in the electrical conductivity of SnO{sub 2} crystal from n-type to p-type conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Villamagua, Luis, E-mail: luis.villamagua@tyndall.ie [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy); Stashans, Arvids [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi [Department of Chemical and Materials Engineering, National Central University, Jhong-Li, Taiwan (China); Carini, Manuela [Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy)

    2015-05-01

    Highlights: • Switch from n-type to p-type conductivity in SnO{sub 2} has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO{sub 2} compound shows stable p-type conductivity. • Low resistivity (3.657 × 10{sup −1} Ω cm) has been obtained. • High carrier concentration (4.858 × 10{sup 19} cm{sup −3}) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO{sub 2} systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO{sub 2} material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling.

  2. Novel transparent conducting oxide technology for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, P.T.; Sutton, P.A.; Gardener, M.; Wakefield, G.

    2005-07-01

    This report outlines the development of both n- and p-type transparent Conducting Oxide (TCO) materials and the demonstrated feasibility of economic production of TCO films by deposition techniques. Descriptions are given of the four main tasks of the project with Task A concentrating on material design and synthesis covering the new precursor to zinc oxide thin films and selection of polymers for formulation; Task B dealing with film formation involving film deposition by spin coating, screen printing, inkjet printing, dip coating and chemical vapour deposition; Task C concerning performance evaluation; and Task D examining manufacturing process development. The prospects for commercialisation are explored and recommendation for future work are considered.

  3. Producing p-type conductivity in self-compensating semiconductor material

    International Nuclear Information System (INIS)

    Vechten, J.A. van; Woodall, J.M.

    1981-01-01

    This relates to compound type semiconductor materials that exhibit self-compensated n-type conductivity. The process described imparts p-type conductivity to a body of normally n-conductivity self-compensated compound semiconductor material by bombarding it with charged particles, either electrons, protons or ions. Other possible steps include introducing an acceptor impurity and applying a coating onto the crystal body. This technique will allow new semiconductor structures to be made. For example, there are some compound semiconductor materials that exhibit n-conductivity only that have energy gap widths that would permit electrical to light conversion at frequency and colours not readily achieved in semiconductor devices. (U.K.)

  4. Highly conductive p-type amorphous oxides from low-temperature solution processing

    International Nuclear Information System (INIS)

    Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-01-01

    We report solution-processed, highly conductive (resistivity 1.3-3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E VBM = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

  5. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    International Nuclear Information System (INIS)

    Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

    1992-01-01

    This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN

  6. Nanostructured transparent conducting oxide electrochromic device

    Science.gov (United States)

    Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

    2016-05-17

    The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

  7. Transparent and conductive paper from nanocellulose fibers

    KAUST Repository

    Hu, Liangbing

    2013-01-01

    Here we report on a novel substrate, nanopaper, made of cellulose nanofibrils, an earth abundant material. Compared with regular paper substrates, nanopaper shows superior optical properties. We have carried out the first study on the optical properties of nanopaper substrates. Since the size of the nanofibrils is much less than the wavelength of visible light, nanopaper is highly transparent with large light scattering in the forward direction. Successful depositions of transparent and conductive materials including tin-doped indium oxide, carbon nanotubes and silver nanowires have been achieved on nanopaper substrates, opening up a wide range of applications in optoelectronics such as displays, touch screens and interactive paper. We have also successfully demonstrated an organic solar cell on the novel substrate. © The Royal Society of Chemistry 2013.

  8. Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

    2016-01-01

    Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

  9. Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.k [Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Yi, Min-Su [Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711 (Korea, Republic of); Lee, Sung-Nam [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736 (Korea, Republic of)

    2009-05-29

    The electrical, structural, and optical characteristics of Ag/ZnO-doped In{sub 2}O{sub 3} (IZO) ohmic contacts to p-type GaN:Mg (2.5 x 10{sup 17} cm{sup -3}) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 {sup o}C annealed samples showed rectifying behavior, the 500 and 600 {sup o}C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 {sup o}C for 3 min in a vacuum ({approx} 10{sup -3} Torr) resulted in the lowest specific contact resistivity of 1.8 x 10{sup -4} {Omega}.cm{sup 2} and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts.

  10. Transparent Conductive Ink for Additive Manufacturing

    Science.gov (United States)

    Patlan, X. J.; Rolin, T. D.

    2017-01-01

    NASA analyzes, tests, packages, and fabricates electrical, electronic, and electromechanical (EEE) parts. Nanotechnology is listed in NASA's Technology Roadmap as a key area to invest for further development.1 This research project focused on using nanotechnology to improve electroluminescent lighting in terms of additive manufacturing and to increase energy efficiency. Specifically, this project's goal was to produce a conductive but transparent printable ink that can be sprayed on any surface for use as one of the electrodes in electroluminescent device design. This innovative work is known as thick film dielectric electroluminescent (TDEL) technology. TDEL devices are used for "backlighting, illumination, and identification due to their tunable color output, scalability, and efficiency" (I.K. Small, T.D. Rolin, and A.D. Shields, "3D Printed Electroluminescent Light Panels," NASA Fiscal Year 2017 Center Innovation Fund Proposal, unpublished data, 2017). These devices use a 'front-to-back' printing method, where the substrate is the transparent layer, and the dielectric and phosphor are layered on top. This project is a first step in the process of creating a 3D printable 'back-to-front' electroluminescent device. Back-to-front 3D-printed devices are beneficial because they can be printed onto different substrates and embedded in different surfaces, and the substrate is not required to be transparent, all because the light is emitted from the top surface through the transparent conductor. Advances in this area will help further development of printing TDEL devices on an array of different surfaces. Figure 1 demonstrates the layering of the two electrodes that are aligned in a parallel plate capacitor structure (I.K. Small, T.D. Rolin, and A.D. Shields, "3D Printed Electroluminescent Light Panels," NASA Fiscal Year 2017 Center Innovation Fund Proposal, unpublished data, 2017). Voltage is applied across the device, and the subsequent electron excitation results in

  11. Double transparent conducting layers for Si photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  12. Double transparent conducting layers for Si photovoltaics

    International Nuclear Information System (INIS)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  13. ZnO based transparent conductive oxide films with controlled type of conduction

    Energy Technology Data Exchange (ETDEWEB)

    Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

    2014-11-28

    The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

  14. Influence of the ``second gap'' on the optical absorption of transparent conducting oxides

    Science.gov (United States)

    Ha, Viet-Anh; Waroquiers, David; Rignanese, Gian-Marco; Hautier, Geoffroy

    Transparent conducting oxides (TCOs) are critical to many technologies (e.g., thin-film solar cells, flat-panel displays or organic light-emitting diodes). TCOs are heavily doped (n or p-type) oxides that satisfy many design criteria such as high transparency to visible light (i.e., a band gap > 3 eV), high concentration and mobility of carriers (leading to high conductivity), ... In such (highly doped) systems, optical transitions from the conduction band minimum to higher energy bands in n-type or from lower energy bands to the valence band maximum in p-type are possible and can degrade transparency. In fact, it has been claimed that a high energy (> 3eV) for any of these transitions made possible by doping, commonly referred as a high ``second gap'', is a necessary design criterion for high performance TCOs. Here, we study the influence of this second gap on the transparency of doped TCOs by using ab initio calculations within the random phase approximation (RPA) for several well-known p-type and n-type TCOs. Our work highlights how the second gap affects the transparency of doped TCOs, shining light on more accurate design criteria for high performance TCOs.

  15. Cu mesh for flexible transparent conductive electrodes.

    Science.gov (United States)

    Kim, Won-Kyung; Lee, Seunghun; Hee Lee, Duck; Hee Park, In; Seong Bae, Jong; Woo Lee, Tae; Kim, Ji-Young; Hun Park, Ji; Chan Cho, Yong; Ryong Cho, Chae; Jeong, Se-Young

    2015-06-03

    Copper electrodes with a micromesh/nanomesh structure were fabricated on a polyimide substrate using UV lithography and wet etching to produce flexible transparent conducting electrodes (TCEs). Well-defined mesh electrodes were realized through the use of high-quality Cu thin films. The films were fabricated using radio-frequency (RF) sputtering with a single-crystal Cu target--a simple but innovative approach that overcame the low oxidation resistance of ordinary Cu. Hybrid Cu mesh electrodes were fabricated by adding a capping layer of either ZnO or Al-doped ZnO. The sheet resistance and the transmittance of the electrode with an Al-doped ZnO capping layer were 6.197 ohm/sq and 90.657%, respectively, and the figure of merit was 60.502 × 10(-3)/ohm, which remained relatively unchanged after thermal annealing at 200 °C and 1,000 cycles of bending. This fabrication technique enables the mass production of large-area flexible TCEs, and the stability and high performance of Cu mesh hybrid electrodes in harsh environments suggests they have strong potential for application in smart displays and solar cells.

  16. The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

    Science.gov (United States)

    Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

    2010-10-01

    The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

  17. The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO2 transparent semiconducting films prepared by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

    2010-01-01

    The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2 :Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2 :Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

  18. The role of the VZn-NO-H complex in the p-type conductivity in ZnO.

    Science.gov (United States)

    Amini, M N; Saniz, R; Lamoen, D; Partoens, B

    2015-02-21

    Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant (∼10(18) cm(-3)) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZn-NO-H shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZn-NO-H complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn-NO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZn-NO, leaving only two states empty higher in the band gap and making the VZn-NO-H complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZn-NO-H complex, but probably the formation of the VZn-NO complex during the annealing process.

  19. Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

    2011-09-12

    We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

  20. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  1. Graphene Transparent Conductive Electrodes for Next- Generation Microshutter Arrays

    Science.gov (United States)

    Li, Mary; Sultana, Mahmooda; Hess, Larry

    2012-01-01

    Graphene is a single atomic layer of graphite. It is optically transparent and has high electron mobility, and thus has great potential to make transparent conductive electrodes. This invention contributes towards the development of graphene transparent conductive electrodes for next-generation microshutter arrays. The original design for the electrodes of the next generation of microshutters uses indium-tin-oxide (ITO) as the electrode material. ITO is widely used in NASA flight missions. The optical transparency of ITO is limited, and the material is brittle. Also, ITO has been getting more expensive in recent years. The objective of the invention is to develop a graphene transparent conductive electrode that will replace ITO. An exfoliation procedure was developed to make graphene out of graphite crystals. In addition, large areas of single-layer graphene were produced using low-pressure chemical vapor deposition (LPCVD) with high optical transparency. A special graphene transport procedure was developed for transferring graphene from copper substrates to arbitrary substrates. The concept is to grow large-size graphene sheets using the LPCVD system through chemical reaction, transfer the graphene film to a substrate, dope graphene to reduce the sheet resistance, and pattern the film to the dimension of the electrodes in the microshutter array. Graphene transparent conductive electrodes are expected to have a transparency of 97.7%. This covers the electromagnetic spectrum from UV to IR. In comparison, ITO electrodes currently used in microshutter arrays have 85% transparency in mid-IR, and suffer from dramatic transparency drop at a wavelength of near-IR or shorter. Thus, graphene also has potential application as transparent conductive electrodes for Schottky photodiodes in the UV region.

  2. Electrical conduction and dielectric relaxation in p-type PVA/CuI polymer composite

    Directory of Open Access Journals (Sweden)

    M.H. Makled

    2013-11-01

    Full Text Available PVA/CuI polymer composite samples have been prepared and subjected to characterizations using FT-IR spectroscopy, DSC analysis, ac spectroscopy and dc conduction. The FT-IR spectral analysis shows remarkable variation of the absorption peak positions whereas DSC illustrates a little decrease of both glass transition temperature, Tg, and crystallization fraction, χ, with increasing CuI concentration. An increase of dc conductivity for PVA/CuI nano composite by increasing CuI concentration is recoded up to 15 wt%, besides it obeys Arhenuis plot with an activation energy in the range 0.54–1.32 eV. The frequency dependence of ac conductivity showed power law with an exponent 0.33 < s < 0.69 which predicts hopping conduction mechanism. The frequency dependence of both dielectric permittivity and dielectric loss obeys Debye dispersion relations in wide range of temperatures and frequency. Significant values of dipole relaxation time obtained which are thermally activated with activation energies in the range 0.33–0.87 eV. A significant value of hopping distance in the range 3.4–1.2 nm is estimated in agreement with the value of Bohr radius of the exciton.

  3. New transparent conductive metal based on polymer composite

    Energy Technology Data Exchange (ETDEWEB)

    Keshavarz Hedayati, Mehdi; Jamali, Mohammad [Nanochemistry and Nanoengineering, Institute for Materials Science, Faculty of Engineering, Christian-Albrechts-University, Kiel (Germany); Strunkus, Thomas; Zaporochentko, Vladimir; Faupel, Franz [Multicomponent Materials, Institute for Materials Science, Faculty of Engineering, Christian-Albrechts-University, Kiel (Germany); Elbahri, Mady [Nanochemistry and Nanoengineering, Institute for Materials Science, Faculty of Engineering, Christian-Albrechts-University, Kiel (Germany); Helmholtz-Zentrum Geesthacht GmbH, Institute of Polymer Research, Nanochemistry and Nanoengineering (Germany)

    2011-07-01

    Currently great efforts are made to develop new kind of transparent conductors (TCs) to replace ITO. In this regard different materials and composites have been proposed and studied including conductive polymers, carbon nanotubes (CNTs), metal grids, and random networks of metallic nanowires. But so far none of them could be used as a replacing material, since either they are either fragile and brittle or their electrical conductivity is below the typical ITO. Thin metallic films due to their high electrical conductivity could be one of the best replacing materials for ITO, however their poor transparency makes their application as TCs limited. Here we design and fabricate a new polymeric composite coating which enhances the transparency of the thin metal film up to 100% relative to the initial value while having a high electrical conductivity of typical metals. Therefore our proposed device has a great potential to be used as new transparent conductor.

  4. Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

    Science.gov (United States)

    Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

    2017-05-01

    Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

  5. Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

    KAUST Repository

    Mansour, Ahmed E.

    2016-11-25

    The continued growth of the optoelectronics industry and the emergence of wearable and flexible electronics will continue to place an ever increasing pressure on replacing ITO, the most widely used transparent conducting electrode (TCE). Among the various candidates, graphene shows the highest optical transmittance in addition to promising electrical transport properties. The currently available large-scale synthesis routes of graphene result in polycrystalline samples rife with grain boundaries and other defects which limit its transport properties. Chemical doping of graphene is a viable route towards increasing its conductivity and tuning its work function. However, dopants are typically present at the surface of the graphene sheet, making them highly susceptible to degradation in environmental conditions. Few-layers graphene (FLG) is a more resilient form of graphene exhibiting higher conductivity and performance stability under stretching and bending as contrasted to single-layer graphene. In addition FLG presents the advantage of being amenable bulk doping by intercalation. Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However

  6. Surface accumulation conduction controlled sensing characteristic of p-type CuO nanorods induced by oxygen adsorption

    International Nuclear Information System (INIS)

    Wang, C; Fu, X Q; Xue, X Y; Wang, Y G; Wang, T H

    2007-01-01

    P-type CuO nanorods were synthesized by a hydrothermal method and the ethanol-sensing properties of sensors based on CuO were investigated. The sensor resistance increased when it was exposed to ethanol and decreased in the air, which is contrary to the case for sensors realized from n-type semiconductor. The resistance of the CuO-based sensor was about 2 kΩ in air and 6 kΩ in ethanol vapour with concentration of 2000 ppm. Such a sensing property is attributed to surface accumulation conduction. Sensors based on CuO nanorods have potential applications in detecting ethanol in low concentration

  7. Ultrathin and stable Nickel films as transparent conductive electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Grilli, M.L., E-mail: marialuisa.grilli@enea.it [ENEA, Materials Technology Unit, Via Anguillarese 301, 00123 Rome (Italy); Di Sarcina, I. [ENEA, Materials Technology Unit, Via Anguillarese 301, 00123 Rome (Italy); Bossi, S. [ENEA, Robotics Laboratory, Via Anguillarese 301, 00123 Rome (Italy); The Biorobotics Institute, Scuola Superiore Sant' Anna, Viale Rinaldo Piaggio 34, 56025 Pontedera, Pisa (Italy); Rinaldi, A.; Pilloni, L.; Piegari, A. [ENEA, Materials Technology Unit, Via Anguillarese 301, 00123 Rome (Italy)

    2015-11-02

    Ultrathin stable transparent conductive nickel films were deposited on quartz substrates by radio frequency sputtering at room temperature. Such films showed visible transmittance up to 80% and conductivity up to 1.8 × 10{sup 4} S/cm, further increased to 2,3 × 10{sup 5} S/cm by incorporation of a micrometric silver grid. Atomic force microscopy and scanning electron microscopy revealed quite compact, smooth and low surface roughness films. Excellent film stability, ease, fast and low cost process fabrication make these films highly competitive compared to indium tin oxide alternative transparent conductors. Films were characterized regarding their morphological, optical and electrical properties. - Highlights: • Indium-free transparent conductors are proposed. • Ultrathin Ni films are fabricated with a very fast process at room temperature. • Films have conductivity values up to 1.8 × 10{sup 4} S/cm. • Ni ultrathin films are good candidates for UV and NIR optoelectronic applications.

  8. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

    International Nuclear Information System (INIS)

    Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

    1989-01-01

    Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

  9. En route to the conductivity bottleneck in p-type CuCr1-xMxO2-ySy (M = Li, Mg)

    Science.gov (United States)

    Mandal, P.; Mazumder, N.; Akhtar, A. J.; Roy, R.; Chattopadhyay, K. K.

    2017-05-01

    We extend our material design concept [P. Mandal et al. J. Phys. D: Appl. Phys. 49, 275109, (2016); N. Mazumder et al. J. Phys. Chem. Lett. 4, 3539, (2013)] further aiming to overcome the conductivity bottleneck (1 Scm-1) in p-type transparent conducting oxide (TCO). In this work, we execute the strategy of simultaneous cationic-anionic hole doping in the prototype p-TCO CuCrO2. CuCr1-xMxO2-ySy (M = Li, Mg) is prepared by solid state heating at 1150 °C. Using Rietveld analysis, the presence of Mgcr•, Licr • and SO×areconfirmed and quantified. The diffuse reflectance (DR) spectra are acquired to determine the dominant optical gap (˜ 3.5 eV) and found to be affected little upon site selective hole doping. From temperature dependence (80 - 300 K) of DC conductivity (σdc), (Licr •+SO×)dopingcan be identified to be the more plausible alternative to reach the bottleneck threshold compared to (Mgcr •+SO×) albeit of smaller σdc at 300 K.

  10. Cellulose nanofibers/reduced graphene oxide flexible transparent conductive paper.

    Science.gov (United States)

    Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Li, Jia; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

    2013-08-14

    The cellulose nanofibers (CNFs) paper exhibit high visible light transmittance, high mechanical strength, and excellent flexibility. Therefore, CNFs paper may be an excellent substrate material for flexible transparent electronic devices. In this paper, we endeavor to prepare CNFs-based flexible transparent conductive paper by layer-by-layer (LbL) assembly using divalent copper ions (Cu(2+)) as the crosslinking agent. The thickness of the reduced graphene oxide (RGO) active layer in the CNFs paper can be controlled by the cycle times of the LbL assembly. CNFs/[RGO]20 paper has the sheet resistances of ∼2.5 kΩ/□, and the transmittance of about 76% at a wavelength of 550 nm. Furthermore, CNFs/[RGO]20 paper inherits the excellent mechanical properties of CNFs paper, and the ultimate strength is about 136 MPa. CNFs-based flexible transparent conductive paper also exhibits excellent electrical stability and flexibility. Copyright © 2013. Published by Elsevier Ltd.

  11. Highly Transparent and Conductive Metallized Nanofibers by Electrospinning and Electroplating

    Science.gov (United States)

    Yoon, Sam S.; Yarin, Alexander L.

    2017-11-01

    Transparent conducting films (TCFs) and transparent heaters (THs) are of interest for a wide variety of applications, from displays to window defrosters. Here, we demonstrate production of highly flexible, conducting, and transparent copper (Cu), nickel (Ni), platinum (Pt), and silver (Ag) nanofibers suitable for use not only in TCFs and THs but also in some other engineering applications. The merging of fibers at their intersections (i.e. self-junctioning) minimizes contact resistance in these films. These metallized nanofibers exhibited a remarkably low sheet resistance at a high optical transmittance. This low sheet resistance allows them to serve as low-voltage heaters, achieving a high heating temperature at a relatively low applied voltage. These nanofibers are free-standing, flexible, stretchable, and their mechanical reliability was confirmed through various mechanical endurance tests.

  12. Highly conductive interwoven carbon nanotube and silver nanowire transparent electrodes

    Directory of Open Access Journals (Sweden)

    Andrew J Stapleton, Rakesh A Afre, Amanda V Ellis, Joe G Shapter, Gunther G Andersson, Jamie S Quinton and David A Lewis

    2013-01-01

    Full Text Available Electrodes fabricated using commercially available silver nanowires (AgNWs and single walled carbon nanotubes (SWCNTs produced sheet resistances in the range 4–24 Ω squ−1 with specular transparencies up to 82 %. Increasing the aqueous dispersibility of SWCNTs decreased the bundle size present in the film resulting in improved SWCNT surface dispersion in the films without compromising transparency or sheet resistance. In addition to providing conduction pathways between the AgNW network, the SWCNTs also provide structural support, creating stable self-supporting films. Entanglement of the AgNWs and SWCNTs was demonstrated to occur in solution prior to deposition by monitoring the transverse plasmon resonance mode of the AgNWs during processing. The interwoven AgNW/SWCNT structures show potential for use in optoelectronic applications as transparent electrodes and as an ITO replacement.

  13. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  14. Angle-specific transparent conducting electrodes with metallic gratings

    Energy Technology Data Exchange (ETDEWEB)

    Rivolta, N. X. A., E-mail: nicolas.rivolta@umons.ac.be; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, Avenue Maistriau 19, B-7000 Mons (Belgium)

    2014-08-07

    Transparent conducting electrodes, which are not made from indium tin oxide, and which display a strong angular dependence are useful for various technologies. Here, we introduce a tilted silver grating that combines a large conductance with a strong and angle-specific transmittance. When the light incidence angle matches the tilt angle of the grating, transmittance is close to the maximum along a very broadband range. We explain the behavior through simulations that show in detail the plasmonic and interference effects at play.

  15. Transparent conducting oxide top contacts for organic electronics

    KAUST Repository

    Franklin, Joseph B.

    2014-01-01

    A versatile method for the deposition of transparent conducting oxide (TCO) layers directly onto conjugated polymer thin film substrates is presented. Using pulsed laser deposition (PLD) we identify a narrow window of growth conditions that permit the deposition of highly transparent, low sheet resistance aluminium-doped zinc oxide (AZO) without degradation of the polymer film. Deposition on conjugated polymers mandates the use of low growth temperatures (<200°C), here we deposit AZO onto poly-3-hexylthiophene (P3HT) thin films at 150°C, and investigate the microstructural and electrical properties of the AZO as the oxygen pressure in the PLD chamber is varied (5-75 mTorr). The low oxygen pressure conditions previously optimized for AZO deposition on rigid substrates are shown to be unsuitable, resulting in catastrophic damage of the polymer films. By increasing the oxygen pressure, thus reducing the energy of the ablated species, we identify conditions that allow direct deposition of continuous, transparent AZO films without P3HT degradation. We find that uptake of oxygen into the AZO films reduces the intrinsic charge carriers and AZO films with a measured sheet resistance of approximately 500 Ω □-1 can be prepared. To significantly reduce this value we identify a novel process in which AZO is deposited over a range of oxygen pressures-enabling the deposition of highly transparent AZO with sheet resistances below 50 Ω □-1 directly onto P3HT. We propose these low resistivity films are widely applicable as transparent top-contacts in a range of optoelectronic devices and highlight this by demonstrating the operation of a semi-transparent photovoltaic device. © 2014 The Royal Society of Chemistry. 2014.

  16. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

    OpenAIRE

    Robert Kucharski; Łukasz Janicki; Marcin Zajac; Monika Welna; Marcin Motyka; Czesław Skierbiszewski; Robert Kudrawiec

    2017-01-01

    GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-in...

  17. Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

    KAUST Repository

    Awan, Saif Ullah

    2014-10-28

    Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn1-yLiyO(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4×1017/cc to 7.3×1017/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5kV/cm (0.11 μC/cm2) and 2.8kV/cm (0.15 μC/cm2) for y=0.08 and y=0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3×1017/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

  18. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

    Directory of Open Access Journals (Sweden)

    Robert Kucharski

    2017-06-01

    Full Text Available GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples or dopant ionization (p-type samples. In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 1020 cm−3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 1018 cm−3 are highly transparent with the absorption coefficient below 3 cm−1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

  19. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    International Nuclear Information System (INIS)

    Mohd Ali, N I; Misran, N; Mansor, M F; Jamlos, M F

    2017-01-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified. (paper)

  20. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    Science.gov (United States)

    Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

    2017-05-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

  1. Highly conducting and transparent sprayed indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

    1998-03-01

    Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

  2. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  3. VOx effectively doping CVD-graphene for transparent conductive films

    Science.gov (United States)

    Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

    2016-11-01

    Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

  4. Emerging Transparent Conducting Electrodes for Organic Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Tze-Bin Song

    2014-03-01

    Full Text Available Organic light emitting diodes (OLEDs have attracted much attention in recent years as next generation lighting and displays, due to their many advantages, including superb performance, mechanical flexibility, ease of fabrication, chemical versatility, etc. In order to fully realize the highly flexible features, reduce the cost and further improve the performance of OLED devices, replacing the conventional indium tin oxide with better alternative transparent conducting electrodes (TCEs is a crucial step. In this review, we focus on the emerging alternative TCE materials for OLED applications, including carbon nanotubes (CNTs, metallic nanowires, conductive polymers and graphene. These materials are selected, because they have been applied as transparent electrodes for OLED devices and achieved reasonably good performance or even higher device performance than that of indium tin oxide (ITO glass. Various electrode modification techniques and their effects on the device performance are presented. The effects of new TCEs on light extraction, device performance and reliability are discussed. Highly flexible, stretchable and efficient OLED devices are achieved based on these alternative TCEs. These results are summarized for each material. The advantages and current challenges of these TCE materials are also identified.

  5. Uniformly embedded silver nanomesh as highly bendable transparent conducting electrode

    International Nuclear Information System (INIS)

    Choi, Hak-Jong; Choo, Soyoung; Jung, Pil-Hoon; Shin, Ju-Hyeon; Kim, Yang-Doo; Lee, Heon

    2015-01-01

    Ag-nanomesh-based highly bendable conducting electrodes are developed using a combination of metal nanotransfer printing and embossing for the 6-inch wafer scale. Two Ag nanomeshes, including pitch sizes of 7.5 and 10 μm, are used to obtain highly transparent (approximately 85% transmittance at a wavelength of 550 nm) and electrically conducting properties (below 10 Ω sq −1 ). The Ag nanomeshes are also distinguished according to the fabrication process, which is called transferred or embedded Ag nanomesh on polyethylene terephthalate (PET) substrate, in order to compare their stability against bending stress. Then the enhancement of bending stability when the Ag nanomesh is embedded in the PET substrate is confirmed. (paper)

  6. Uniformly embedded silver nanomesh as highly bendable transparent conducting electrode

    Science.gov (United States)

    Choi, Hak-Jong; Choo, Soyoung; Jung, Pil-Hoon; Shin, Ju-Hyeon; Kim, Yang-Doo; Lee, Heon

    2015-02-01

    Ag-nanomesh-based highly bendable conducting electrodes are developed using a combination of metal nanotransfer printing and embossing for the 6-inch wafer scale. Two Ag nanomeshes, including pitch sizes of 7.5 and 10 μm, are used to obtain highly transparent (approximately 85% transmittance at a wavelength of 550 nm) and electrically conducting properties (below 10 Ω sq-1). The Ag nanomeshes are also distinguished according to the fabrication process, which is called transferred or embedded Ag nanomesh on polyethylene terephthalate (PET) substrate, in order to compare their stability against bending stress. Then the enhancement of bending stability when the Ag nanomesh is embedded in the PET substrate is confirmed.

  7. Highly Conductive Transparent and Flexible Electrodes Including Double-Stacked Thin Metal Films for Transparent Flexible Electronics.

    Science.gov (United States)

    Han, Jun Hee; Kim, Do-Hong; Jeong, Eun Gyo; Lee, Tae-Woo; Lee, Myung Keun; Park, Jeong Woo; Lee, Hoseung; Choi, Kyung Cheol

    2017-05-17

    To keep pace with the era of transparent and deformable electronics, electrode functions should be improved. In this paper, an innovative structure is suggested to overcome the trade-off between optical and electrical properties that commonly arises with transparent electrodes. The structure of double-stacked metal films showed high conductivity (electronics are expected.

  8. Slightly Conductive Transparent Films for Space Applications: Manufacturability and Durability

    Science.gov (United States)

    Uppala, N.; Griffin, J.; Vemulapalli, J.; Hambourger, P. D.

    2001-01-01

    Highly transparent, slightly conductive films of co-deposited indium tin oxide (ITO) and MgF, have possible applications for environmental protection of exterior surfaces of spacecraft. Reliable preparation of films with the desired sheet resistivity (approximately 10(exp 8) ohms/square) is difficult because the electrical properties of ITO-Mg F, are highly dependent on film composition. We have investigated the use of plasma emission monitoring to improve the reproducibility of films prepared by RF magnetron sputtering. While considerable improve ment was observed, it appears that some in-situ electrical or optica l characterization will be needed for reliable production coating wit h ITO-MgF,. We have also done further evaluation of a possibly undesi rable photoconductive effect previously observed in these films.

  9. Structure-Property Relationships in Amorphous Transparent Conducting Oxides

    Science.gov (United States)

    Moffitt, Stephanie Lucille

    Over the last 20 years a new field of amorphous transparent conducting oxides (a-TCOs) has developed. The amorphous nature of these films makes them well suited for large area applications. In addition, a-TCOs can be made at low temperatures and through solution processing methods. These assets provide promising opportunities to improve applications such as solar cells and back-lit displays where traditional crystalline TCOs are used. In addition, it opens the door for new technological applications including the possibility for transparent, flexible electronics. Despite the recent growth in this field, fundamental understanding of the true nature of conductivity and the amorphous structure in this materials system is still progressing. To develop a greater understanding of a-TCOs, structure-property relationships were developed in the a-IGO and a-IZO systems. From the combination of element-specific local structure studies and liquid quench molecular dynamics simulations it is clear that a degree of structure remains in a-TCOs. By understanding this structure, the effect of gallium on thermal stability, carrier concentration and carrier mobility is understood. The source of charge carriers in a-IZO is identified as oxygen vacancies through the application of in situ Brouwer analysis. The continued development of the Brouwer analysis technique for use in amorphous oxides adds to the available methods for studying defects in amorphous systems. Finally, the foundational knowledge gained from the in-depth study of a-IGO was extended to understand the role of combustion processing and pulsed laser deposition as growth methods for transistors based on a-IGO.

  10. Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

    KAUST Repository

    Mansour, Ahmed

    2016-01-01

    Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However, the conductivity increases compared modestly to intercalation as the electron transfer is limited to the uppermost graphene layers. Finally, a novel and universal multi-modal doping strategy is developed, thanks to the unique platform offered by FLG, where surface and intercalation doping are combined to mutually achieve high conductivity with an extended tunability of the work function. This work presents doped-FLG as a prospective and versatile candidate among emerging TCEs, given the need for efficient and stable doping routes capable of controllably tuning its properties to meet the criteria of a broad range of applications.

  11. Comparing the fundamental physics and device performance of transparent, conductive nanostructured networks with conventional transparent conducting oxides

    Energy Technology Data Exchange (ETDEWEB)

    Barnes, Teresa M.; Reese, Matthew O.; Bergeson, Jeremy D.; Larsen, Brian A.; Blackburn, Jeffrey L.; Beard, Matthew C.; Bult, Justin; Van de Lagemaat, Jao [NREL, 1617 Cole Blvd., Golden, CO 80401 (United States)

    2012-03-15

    Networks made of single-walled carbon nanotubes (SWNTs) and metallic nanowire networks, graphene, and ultra-thin metal films have all been proposed as replacements for transparent conducting oxides (TCOs) in photovoltaic and other applications. However, only limited comparisons of nanostructured networks and TCOs are available. Several common figures of merit that are often used to compare the electrical and optical performance of the transparent contacts are evaluated here, and the merits of each method of comparison are discussed. Calculating the current loss due to absorption in the TCO is the most useful metric for evaluating new materials for use in solar cells with well-defined sheet resistance requirements and known quantum efficiencies. The 'Haacke' figure of merit, {phi}{sub H}, correlates fairly well with current loss and is a good metric for evaluating electro-optical performance for more general applications. The analyses presented here demonstrate that silver nanowire networks are much closer to achieving optimal electrical and optical properties than carbon-based networks. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    Science.gov (United States)

    Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  13. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  14. Laser Processing of Carbon Nanotube Transparent Conducting Films

    Science.gov (United States)

    Mann, Andrew

    Transparent conducting films, or TCFs, are 2D electrical conductors with the ability to transmit light. Because of this, they are used in many popular electronics including smart phones, tablets, solar panels, and televisions. The most common material used as a TCF is indium tin oxide, or ITO. Although ITO has great electrical and optical characteristics, it is expensive, brittle, and difficult to pattern. These limitations have led researchers toward other materials for the next generation of displays and touch panels. The most promising material for next generation TCFs is carbon nanotubes, or CNTs. CNTs are cylindrical tubes of carbon no more than a few atoms thick. They have different electrical and optical properties depending on their atomic structure, and are extremely strong. As an electrode, they conduct electricity through an array of randomly dispersed tubes. The array is highly transparent because of gaps between the tubes, and size and optical properties of the CNTs. Many research groups have tried making CNT TCFs with opto-electric properties similar to ITO but have difficultly achieving high conductivity. This is partly attributed to impurities from fabrication and a mix of different tube types, but is mainly caused by low junction conductivity. In functionalized nanotubes, junction conductivity is impaired by covalently bonded molecules added to the sidewalls of the tubes. The addition of this molecule, known as functionalization, is designed to facilitate CNT dispersion in a solvent by adding properties of the molecule to the CNTs. While necessary for a good solution, functionalization decreases the conductivity in the CNT array by creating defects in the tube's structures and preventing direct inter-carbon bonding. This research investigates removing the functional coating (after tube deposition) by laser processing. Laser light is able to preferentially heat the CNTs because of their optical and electrical properties. Through local conduction

  15. Evaluating conducting network based transparent electrodes from geometrical considerations

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ankush [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, 560064 Bangalore (India); Kulkarni, G. U., E-mail: guk@cens.res.in [Centre for Nano and Soft Matter Sciences, 560013 Bangalore (India)

    2016-01-07

    Conducting nanowire networks have been developed as viable alternative to existing indium tin oxide based transparent electrode (TE). The nature of electrical conduction and process optimization for electrodes have gained much from the theoretical models based on percolation transport using Monte Carlo approach and applying Kirchhoff's law on individual junctions and loops. While most of the literature work pertaining to theoretical analysis is focussed on networks obtained from conducting rods (mostly considering only junction resistance), hardly any attention has been paid to those made using template based methods, wherein the structure of network is neither similar to network obtained from conducting rods nor similar to well periodic geometry. Here, we have attempted an analytical treatment based on geometrical arguments and applied image analysis on practical networks to gain deeper insight into conducting networked structure particularly in relation to sheet resistance and transmittance. Many literature examples reporting networks with straight or curvilinear wires with distributions in wire width and length have been analysed by treating the networks as two dimensional graphs and evaluating the sheet resistance based on wire density and wire width. The sheet resistance values from our analysis compare well with the experimental values. Our analysis on various examples has revealed that low sheet resistance is achieved with high wire density and compactness with straight rather than curvilinear wires and with narrower wire width distribution. Similarly, higher transmittance for given sheet resistance is possible with narrower wire width but of higher thickness, minimal curvilinearity, and maximum connectivity. For the purpose of evaluating active fraction of the network, the algorithm was made to distinguish and quantify current carrying backbone regions as against regions containing only dangling or isolated wires. The treatment can be helpful in

  16. Evaluating conducting network based transparent electrodes from geometrical considerations

    International Nuclear Information System (INIS)

    Kumar, Ankush; Kulkarni, G. U.

    2016-01-01

    Conducting nanowire networks have been developed as viable alternative to existing indium tin oxide based transparent electrode (TE). The nature of electrical conduction and process optimization for electrodes have gained much from the theoretical models based on percolation transport using Monte Carlo approach and applying Kirchhoff's law on individual junctions and loops. While most of the literature work pertaining to theoretical analysis is focussed on networks obtained from conducting rods (mostly considering only junction resistance), hardly any attention has been paid to those made using template based methods, wherein the structure of network is neither similar to network obtained from conducting rods nor similar to well periodic geometry. Here, we have attempted an analytical treatment based on geometrical arguments and applied image analysis on practical networks to gain deeper insight into conducting networked structure particularly in relation to sheet resistance and transmittance. Many literature examples reporting networks with straight or curvilinear wires with distributions in wire width and length have been analysed by treating the networks as two dimensional graphs and evaluating the sheet resistance based on wire density and wire width. The sheet resistance values from our analysis compare well with the experimental values. Our analysis on various examples has revealed that low sheet resistance is achieved with high wire density and compactness with straight rather than curvilinear wires and with narrower wire width distribution. Similarly, higher transmittance for given sheet resistance is possible with narrower wire width but of higher thickness, minimal curvilinearity, and maximum connectivity. For the purpose of evaluating active fraction of the network, the algorithm was made to distinguish and quantify current carrying backbone regions as against regions containing only dangling or isolated wires. The treatment can be helpful in

  17. Iron-Treated NiO as a Highly Transparent p-Type Protection Layer for Efficient Si-Based Photoanodes

    DEFF Research Database (Denmark)

    Mei, Bastian Timo; Permyakova, Anastasia Aleksandrovna; Frydendal, Rasmus

    2014-01-01

    Sputter deposition of 50 nm thick NiO films on p+–n-Si and subsequent treatment in an Fe-containing electrolyte yielded highly transparent photoanodes capable of water oxidation (OER) in alkaline media (1 M KOH) with high efficiency and stability. The Fe treatment of NiO thin films enabled Si...

  18. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  19. Stable Nafion-functionalized graphene dispersions for transparent conducting films

    International Nuclear Information System (INIS)

    Liu Yangqiao; Gao Lian; Sun Jing; Wang Yan; Zhang Jing

    2009-01-01

    Nafion was used for the first time to aid in preparing stable graphene dispersions in mixed water/ethanol (1:1) solvents via the reduction of graphite oxide using hydrazine. The dispersion was characterized by ultraviolet-visible (UV-vis) spectra, transmission electron microscopy, zeta potential analysis, etc. It was found that for Nafion-to-graphene ratios higher than 5:1, graphene solutions with concentrations up to 1 mg ml -1 and stabilities of over three months were obtained. It was proposed that the Nafion adsorbed onto the graphene by the hydrophobic interaction of its fluoro-backbones with the graphene layer and imparted stability by an electrosteric mechanism. Furthermore, transparent and conductive films were prepared using these highly stable Nafion-stabilized graphene dispersions. The prepared Nafion-graphene films possess smooth and homogeneous surfaces and the sheet resistance was as low as 30 kΩ/sq for a transmittance of 80% at 550 nm, which was much lower than for other graphene films obtained by chemical reduction. X-ray photoelectron spectroscopy and Raman spectroscopy confirmed the p-doping of the graphene by Nafion. It was expected that this p-doping effect, as well as the high dispersing ability of Nafion for graphene and the connection of the sp 2 domains by residual Nafion combined to produce good properties of the Nafion-graphene films.

  20. Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides

    KAUST Repository

    Paniagua, Sergio A.

    2016-05-26

    Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface - the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology - significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties. The first part outlines the relevance of TCO surface modification to organic electronics, surveys methods for the synthesis of PAs, discusses the modes by which they can bind to TCO surfaces, and compares PAs to alternative organic surface modifiers. The next section discusses methods of PA monolayer deposition, the kinetics of monolayer formation, and structural evidence regarding molecular orientation on TCOs. The next sections discuss TCO work-function modification using PAs, tuning of TCO surface energy using PAs, and initiation of polymerizations from TCO-tethered PAs. Finally, studies that examine the use of PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared. © 2016 American Chemical Society.

  1. Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides

    KAUST Repository

    Paniagua, Sergio A.; Giordano, Anthony J.; Smith, O’ Neil L.; Barlow, Stephen; Li, Hong; Armstrong, Neal R.; Pemberton, Jeanne E.; Bredas, Jean-Luc; Ginger, David; Marder, Seth R.

    2016-01-01

    Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface - the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology - significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties. The first part outlines the relevance of TCO surface modification to organic electronics, surveys methods for the synthesis of PAs, discusses the modes by which they can bind to TCO surfaces, and compares PAs to alternative organic surface modifiers. The next section discusses methods of PA monolayer deposition, the kinetics of monolayer formation, and structural evidence regarding molecular orientation on TCOs. The next sections discuss TCO work-function modification using PAs, tuning of TCO surface energy using PAs, and initiation of polymerizations from TCO-tethered PAs. Finally, studies that examine the use of PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared. © 2016 American Chemical Society.

  2. Transparency about past, present and future conduct : Experimental evidence on the impact of competitiveness

    NARCIS (Netherlands)

    Potters, J.J.M.; Hinloopen, J.; Normann, H-T

    2009-01-01

    Transparency relates to communication and information about the conduct of firms. Transparency can relate to the past, the present and the future and it can vary in format, content and reliability. In this chapter I review experimental evidence which relates to the impact of transparency on the

  3. DFT plus U studies of Cu doping and p-type compensation in crystalline and amorphous ZnS

    NARCIS (Netherlands)

    Pham, Hieu H.; Barkema, Gerard T.|info:eu-repo/dai/nl/101275080; Wang, Lin-Wang

    2015-01-01

    Zinc sulfide is an excellent candidate for the development of a p-type transparent conducting material that has great demands in solar energy and optoelectronic applications. Doping with Cu is one potential way to make ZnS p-type while preserving its optical transparency for the solar spectrum;

  4. Development and applications of transparent conductive nanocellulose paper

    Science.gov (United States)

    Li, Shaohui; Lee, Pooi See

    2017-12-01

    Increasing attention has been paid to the next generation of 'green' electronic devices based on renewable nanocellulose, owing to its low roughness, good thermal stability and excellent optical properties. Various proof-of-concept transparent nanopaper-based electronic devices have been fabricated; these devices exhibit excellent flexibility, bendability and even foldability. In this review, we summarize the recent progress of transparent nanopaper that uses different types of nanocellulose, including pure nanocellulose paper and composite nanocellulose paper. The latest development of transparent and flexible nanopaper electronic devices are illustrated, such as electrochromic devices, touch sensors, solar cells and transistors. Finally, we discuss the advantages of transparent nanopaper compared to conventional flexible plastic substrate and the existing challenges to be tackled in order to realize this promising potential.

  5. Development and applications of transparent conductive nanocellulose paper.

    Science.gov (United States)

    Li, Shaohui; Lee, Pooi See

    2017-01-01

    Increasing attention has been paid to the next generation of 'green' electronic devices based on renewable nanocellulose, owing to its low roughness, good thermal stability and excellent optical properties. Various proof-of-concept transparent nanopaper-based electronic devices have been fabricated; these devices exhibit excellent flexibility, bendability and even foldability. In this review, we summarize the recent progress of transparent nanopaper that uses different types of nanocellulose, including pure nanocellulose paper and composite nanocellulose paper. The latest development of transparent and flexible nanopaper electronic devices are illustrated, such as electrochromic devices, touch sensors, solar cells and transistors. Finally, we discuss the advantages of transparent nanopaper compared to conventional flexible plastic substrate and the existing challenges to be tackled in order to realize this promising potential.

  6. Development and applications of transparent conductive nanocellulose paper

    Science.gov (United States)

    Li, Shaohui; Lee, Pooi See

    2017-01-01

    Abstract Increasing attention has been paid to the next generation of ‘green’ electronic devices based on renewable nanocellulose, owing to its low roughness, good thermal stability and excellent optical properties. Various proof-of-concept transparent nanopaper-based electronic devices have been fabricated; these devices exhibit excellent flexibility, bendability and even foldability. In this review, we summarize the recent progress of transparent nanopaper that uses different types of nanocellulose, including pure nanocellulose paper and composite nanocellulose paper. The latest development of transparent and flexible nanopaper electronic devices are illustrated, such as electrochromic devices, touch sensors, solar cells and transistors. Finally, we discuss the advantages of transparent nanopaper compared to conventional flexible plastic substrate and the existing challenges to be tackled in order to realize this promising potential. PMID:28970870

  7. Development and applications of transparent conductive nanocellulose paper

    OpenAIRE

    Li, Shaohui; Lee, Pooi See

    2017-01-01

    Abstract Increasing attention has been paid to the next generation of ‘green’ electronic devices based on renewable nanocellulose, owing to its low roughness, good thermal stability and excellent optical properties. Various proof-of-concept transparent nanopaper-based electronic devices have been fabricated; these devices exhibit excellent flexibility, bendability and even foldability. In this review, we summarize the recent progress of transparent nanopaper that uses different types of nanoc...

  8. Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-04-01

    Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

  9. Ultra-fast transient plasmonics using transparent conductive oxides

    Science.gov (United States)

    Ferrera, Marcello; Carnemolla, Enrico G.

    2018-02-01

    During the last decade, plasmonic- and metamaterial-based applications have revolutionized the field of integrated photonics by allowing for deep subwavelength confinement and full control over the effective permittivity and permeability of the optical environment. However, despite the numerous remarkable proofs of principle that have been experimentally demonstrated, few key issues remain preventing a widespread of nanophotonic technologies. Among these fundamental limitations, we remind the large ohmic losses, incompatibility with semiconductor industry standards, and largely reduced dynamic tunability of the optical properties. In this article, in the larger context of the new emerging field of all-dielectric nanophotonics, we present our recent progresses towards the study of large optical nonlinearities in transparent conducting oxides (TCOs) also giving a general overview of the most relevant and recent experimental attainments using TCO-based technology. However, it is important to underline that the present article does not represent a review paper but rather an original work with a broad introduction. Our work lays in a sort of ‘hybrid’ zone in the middle between high index contrast systems, whose behaviour is well described by applying Mie scattering theory, and standard plasmonic elements where optical modes originate from the electromagnetic coupling with the electronic plasma at the metal-to-dielectric interface. Beside remaining in the context of plasmonic technologies and retaining all the fundamental peculiarities that promoted the success of plasmonics in the first place, our strategy has the additional advantage to allow for large and ultra-fast tunability of the effective complex refractive index by accessing the index-near-zero regime in bulk materials at telecom wavelength.

  10. Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

    International Nuclear Information System (INIS)

    Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C.

    2011-01-01

    Arsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3 As 2 and ZnO-Zn 3 As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of ∼10 17 cm -3 and mobility of ∼8 cm 2 V -1 s -1 were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As Zn -2V Zn shallow acceptor complex and removes the compensating hydrogen center.

  11. The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

    Directory of Open Access Journals (Sweden)

    A. Tombak

    2015-01-01

    Full Text Available In the current paper, the physical properties and microelectronic parameters of direct current (DC sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

  12. Investigation of ITO free transparent conducting polymer based electrode

    Science.gov (United States)

    Sharma, Vikas; Sapna, Sachdev, Kanupriya

    2016-05-01

    The last few decades have seen a significant improvement in organic semiconductor technology related to solar cell, light emitting diode and display panels. The material and structure of the transparent electrode is one of the major concerns for superior performance of devices such as OPV, OLED, touch screen and LCD display. Commonly used ITO is now restricted due to scarcity of indium, its poor mechanical properties and rigidity, and mismatch of energy levels with the active layer. Nowadays DMD (dielectric-metal-dielectric) structure is one of the prominent candidates as alternatives to ITO based electrode. We have used solution based spin coated polymer layer as the dielectric layer with silver thin film embedded in between to make a polymer-metal-polymer (PMP) structure for TCE applications. The PMP structure shows low resistivity (2.3 x 10-4Ω-cm), high carrier concentration (2.9 x 1021 cm-3) and moderate transparency. The multilayer PMP structure is characterized with XRD, AFM and Hall measurement to prove its suitability for opto-electronic device applications.

  13. Investigation of ITO free transparent conducting polymer based electrode

    International Nuclear Information System (INIS)

    Sharma, Vikas; Sapna,; Sachdev, Kanupriya

    2016-01-01

    The last few decades have seen a significant improvement in organic semiconductor technology related to solar cell, light emitting diode and display panels. The material and structure of the transparent electrode is one of the major concerns for superior performance of devices such as OPV, OLED, touch screen and LCD display. Commonly used ITO is now restricted due to scarcity of indium, its poor mechanical properties and rigidity, and mismatch of energy levels with the active layer. Nowadays DMD (dielectric-metal-dielectric) structure is one of the prominent candidates as alternatives to ITO based electrode. We have used solution based spin coated polymer layer as the dielectric layer with silver thin film embedded in between to make a polymer-metal-polymer (PMP) structure for TCE applications. The PMP structure shows low resistivity (2.3 x 10"−"4Ω-cm), high carrier concentration (2.9 x 10"2"1 cm"−"3) and moderate transparency. The multilayer PMP structure is characterized with XRD, AFM and Hall measurement to prove its suitability for opto-electronic device applications.

  14. Investigation of ITO free transparent conducting polymer based electrode

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Vikas; Sapna,; Sachdev, Kanupriya [Department of Physics, Malaviya National Institute of Technology Jaipur, JLN Marg, Jaipur-India-302017 (India)

    2016-05-23

    The last few decades have seen a significant improvement in organic semiconductor technology related to solar cell, light emitting diode and display panels. The material and structure of the transparent electrode is one of the major concerns for superior performance of devices such as OPV, OLED, touch screen and LCD display. Commonly used ITO is now restricted due to scarcity of indium, its poor mechanical properties and rigidity, and mismatch of energy levels with the active layer. Nowadays DMD (dielectric-metal-dielectric) structure is one of the prominent candidates as alternatives to ITO based electrode. We have used solution based spin coated polymer layer as the dielectric layer with silver thin film embedded in between to make a polymer-metal-polymer (PMP) structure for TCE applications. The PMP structure shows low resistivity (2.3 x 10{sup −4}Ω-cm), high carrier concentration (2.9 x 10{sup 21} cm{sup −3}) and moderate transparency. The multilayer PMP structure is characterized with XRD, AFM and Hall measurement to prove its suitability for opto-electronic device applications.

  15. Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te₃.

    Science.gov (United States)

    Kim, Hyun-Sik; Lee, Kyu Hyoung; Yoo, Joonyeon; Youn, Jehun; Roh, Jong Wook; Kim, Sang-Il; Kim, Sung Wng

    2017-07-06

    Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi₂Te₃-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi 0.48 Sb 1.52 Te₃. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi 0.48-x Pb x Sb 1.52 Te₃ due to the increase in hole carrier concentration. Even though the total thermal conductivity increased as Pb was added, due to the increased hole carrier concentration, the thermal conductivity was reduced by 14-22% if the contribution of the increased hole carrier concentration was excluded. To further understand the origin of reduction in the thermal conductivity, we first estimated the contribution of bipolar conduction to thermal conductivity from a two-parabolic band model, which is an extension of the single parabolic band model. Thereafter, the contribution of additional point defect scattering caused by Pb substitution (Pb in the cation site) was analyzed using the Debye-Callaway model. We found that Pb doping significantly suppressed both the bipolar thermal conduction and lattice thermal conductivity simultaneously, while the bipolar contribution to the total thermal conductivity reduction increased at high temperatures. At Pb doping of x = 0.02, the bipolar thermal conductivity decreased by ~30% from 0.47 W/mK to 0.33 W/mK at 480 K, which accounts for 70% of the total reduction.

  16. Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

    Energy Technology Data Exchange (ETDEWEB)

    Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C. [Department of Physics, University of Hong Kong, Pokfulam (Hong Kong); Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Department of Physics, Hong Kong University of Science and Technology (Hong Kong); College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics, University of Hong Kong, Pokfulam (Hong Kong)

    2011-05-15

    Arsenic doped ZnO and ZnMgO films were deposited on SiO{sub 2} using radio frequency magnetron sputtering and ZnO-Zn{sub 3}As{sub 2} and ZnO-Zn{sub 3}As{sub 2}-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of {approx}10{sup 17} cm{sup -3} and mobility of {approx}8 cm{sup 2} V{sup -1} s{sup -1} were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As{sub Zn}-2V{sub Zn} shallow acceptor complex and removes the compensating hydrogen center.

  17. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    2016-01-01

    This article challenges the view of transparency as a matter of providing openness, insight, and clarity by conceptualizing it as a form of visibility management. We tend to think of transparency as a process of ensuring accountability through the timely and public disclosure of information...

  18. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel; Albu, Oana Brindusa

    2017-01-01

    Transparency is an increasingly prominent research topic in many scholarly disciplines and offers valuable insights for organizational communication. This entry provides an overview of the historical background and identifies some themes that presently inform the transparency literature. The entry...... then outlines the most important dimensions of the concept of transparency by highlighting two paradigmatic positions underpinning contemporary research in this area: namely, informational approaches that focus on the sharing of information and the perceived quality of that information and social process...... orientations that explore the dynamics of transparency in organizational settings. The entry highlights emergent methodological and conceptual insights concerning transparency as a dynamic and paradoxical social process with performative characteristics – an approach that remains underexplored....

  19. Enhanced electrical conductivity in Xe ion irradiated CNT based transparent conducting electrode on PET substrate

    Science.gov (United States)

    Surbhi; Sharma, Vikas; Singh, Satyavir; Garg, Priyanka; Asokan, K.; Sachdev, Kanupriya

    2018-02-01

    An investigation of MWCNT-based hybrid electrode films with improved electrical conductivity after Xe ion irradiation is reported. A multilayer hybrid structure of Ag-MWCNT layer embedded in between two ZnO layers was fabricated and evaluated, pre and post 100 keV Xe ion irradiation, for their performance as Transparent Conducting Electrode in terms of their optical and electrical properties. X-ray diffraction pattern exhibits highly c-axis oriented ZnO films with a small variation in lattice parameters with an increase in ion fluence. There is no significant change in the surface roughness of these films. Raman spectra were used to confirm the presence of CNT. The pristine multilayer films exhibit an average transmittance of ˜70% in the entire visible region and the transmittance increases with Xe ion fluence. A significant enhancement in electrical conductivity post-Xe ion irradiation viz from 1.14 × 10-7 Ω-1 cm-1 (pristine) to 7.04 × 103 Ω-1 cm-1 is seen which is due to the high connectivity in the top layer with Ag-CNT hybrid layer facilitating the smooth transfer of electrons.

  20. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    Science.gov (United States)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  1. Deposition and post-processing techniques for transparent conductive films

    Energy Technology Data Exchange (ETDEWEB)

    Christoforo, Mark Greyson; Mehra, Saahil; Salleo, Alberto; Peumans, Peter

    2017-07-04

    In one embodiment, a method is provided for fabrication of a semitransparent conductive mesh. A first solution having conductive nanowires suspended therein and a second solution having nanoparticles suspended therein are sprayed toward a substrate, the spraying forming a mist. The mist is processed, while on the substrate, to provide a semitransparent conductive material in the form of a mesh having the conductive nanowires and nanoparticles. The nanoparticles are configured and arranged to direct light passing through the mesh. Connections between the nanowires provide conductivity through the mesh.

  2. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.; Fan, Shanhui

    2010-01-01

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

  3. Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Pranav; Dutta, Titas; Mal, Siddhartha; Narayan, Jagdish [Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606 (United States)

    2012-01-01

    We report the systematic changes in structural, electrical, and optical properties of NiO thin films on c-sapphire introduced by nanosecond ultraviolet excimer laser pulses. Epitaxial nature of as deposited NiO was determined by x-ray diffraction phi scans and transmission electron microscopy (TEM) and it was established that NiO film growth takes place with twin domains on sapphire where two types of domains have 60 deg. in-plane rotation with respect to each other about the [111] growth direction. We determined that at pulsed laser energy density of 0.275 J/cm{sup 2}, NiO films exhibited conversion from p-type semiconducting to n-type conductive behavior with three orders of magnitude decrease in resistivity, while maintaining its cubic crystal structure and good epitaxial relationship. Our TEM and electron-energy-loss spectroscopy studies conclusively ruled out the presence of any Ni clustering or precipitation due to the laser treatment. The laser-induced n-type carrier transport and conductivity enhancement were shown to be reversible through subsequent thermal annealing in oxygen. This change in conductivity behavior was correlated with the nonequilibrium concentration of laser induced Ni{sup 0}-like defect states.

  4. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    KAUST Repository

    Dolui, Kapildeb

    2013-04-02

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

  5. ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing

    International Nuclear Information System (INIS)

    Liu, Y.; Li, Y.; Zeng, H.

    2013-01-01

    ZnO-based transparent conductive thin films have attracted much attention as a promising substitute material to the currently used indium-tin-oxide thin films in transparent electrode applications. However, the detailed function of the dopants, acting on the electrical and optical properties of ZnO-based transparent conductive thin films, is not clear yet, which has limited the development and practical applications of ZnO transparent conductive thin films. Growth conditions such as substrate type, growth temperature, and ambient atmosphere all play important roles in structural, electrical, and optical properties of films. This paper takes a panoramic view on properties of ZnO thin films and reviews the very recent works on new, efficient, low-temperature, and high-speed deposition technologies. In addition, we highlighted the methods of producing ZnO-based transparent conductive film on flexible substrate, one of the most promising and rapidly emerging research areas. As optimum-processing-parameter conditions are being obtained and their influencing mechanism is becoming clear, we can see that there will be a promising future for ZnO-based transparent conductive films.

  6. Synthesis of Copper-Based Transparent Conductive Oxides with Delafossite Structure via Sol-Gel Processing

    OpenAIRE

    Götzendörfer, Stefan

    2011-01-01

    Starting off with solubility experiments of possible precursors, the present study reveals the whole development of a sol gel processing route for transparent p type semiconductive thin films with delafossite structure right to the fabrication of functional p-n junctions. The versatile sol formulation could successfully be modified for several oxide compositions, enabling the synthesis of CuAlO2, CuCrO2, CuMnO2, CuFeO2 and more. Although several differences in the sintering behaviour of powde...

  7. An optically transparent, flexible, patterned and conductive silk biopolymer film (Conference Presentation)

    Science.gov (United States)

    Umar, Muhammad; Min, Kyungtaek; Kim, Sunghwan

    2017-02-01

    Transparent, flexible, and conducting films are of great interest for wearable electronics. For better biotic/abiotic interface, the films to integrate the electronics components requires the patterned surface conductors with optical transparency, smoothness, good electrical conductivity, along with the biofriendly traits of films. We focus on silk fibroin, a natural biopolymer extracted from the Bombyx mori cocoons, for this bioelectronics applications. Here we report an optically transparent, flexible, and patterned surface conductor on a silk film by burying a silver nanowires (AgNW) network below the surface of the silk film. The conducting silk film reveals high optical transparency of 80% and the excellent electronic conductivity of 15 Ω/sq, along with smooth surface. The integration of light emitting diode (LED) chip on the patterned electrodes confirms that the current can flow through the transparent and patterned electrodes on the silk film, and this result shows an application for integration of functional electronic/opto-electronic devices. Additionally, we fabricate a transparent and flexible radio frequency (RF) antenna and resistor on a silk film and apply these as a food sensor by monitoring the increasing resistance by the flow of gases from the spoiled food.

  8. Transparency

    NARCIS (Netherlands)

    Gupta, A.; Mason, M.

    2015-01-01

    Transparency, as information disclosure, is becoming a widely accepted norm and set of practices in global climate governance. Disclosure of climate-related information is mainly seen as a way to monitor and/or reward various actors’ climate mitigation actions, thereby contributing, at least in

  9. Transparency

    Science.gov (United States)

    LaFee, Scott

    2009-01-01

    Citizens now expect access to information, particularly from public institutions like local school districts. They demand input and accountability. Cultural and technological changes, such as the Internet, make it possible for districts to comply. Yet transparency--the easily seen and understood actions of a school district and the thinking behind…

  10. Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

    Science.gov (United States)

    Kim, Byung-Jae; Mastro, Michael A; Hite, Jennifer; Eddy, Charles R; Kim, Jihyun

    2010-10-25

    We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.

  11. Superior thermal conductivity of transparent polymer nanocomposites with a crystallized alumina membrane

    OpenAIRE

    Md. Poostforush; H. Azizi

    2014-01-01

    The properties of novel thermoconductive and optically transparent nanocomposites have been reported. The composites were prepared by the impregnation of thermoset resin into crystallized anodic aluminum oxide (AAO). Crystallized AAO synthesized by annealing amorphous AAO membrane at 1200°C. Although through-plane thermal conductivity of nanocomposites improved up to 1.13 W•m–1•K–1 (39 vol% alumina) but their transparency was preserved (Tλ550 nm ~ 72%). Integrated annealed alumina phase, low ...

  12. Silver Nanowire Transparent Conductive Films with High Uniformity Fabricated via a Dynamic Heating Method.

    Science.gov (United States)

    Jia, Yonggao; Chen, Chao; Jia, Dan; Li, Shuxin; Ji, Shulin; Ye, Changhui

    2016-04-20

    The uniformity of the sheet resistance of transparent conductive films is one of the most important quality factors for touch panel applications. However, the uniformity of silver nanowire transparent conductive films is far inferior to that of indium-doped tin oxide (ITO). Herein, we report a dynamic heating method using infrared light to achieve silver nanowire transparent conductive films with high uniformity. This method can overcome the coffee ring effect during the drying process and suppress the aggregation of silver nanowires in the film. A nonuniformity factor of the sheet resistance of the as-prepared silver nanowire transparent conductive films could be as low as 6.7% at an average sheet resistance of 35 Ω/sq and a light transmittance of 95% (at 550 nm), comparable to that of high-quality ITO film in the market. In addition, a mechanical study shows that the sheet resistance of the films has little change after 5000 bending cycles, and the film could be used in touch panels for human-machine interactive input. The highly uniform and mechanically stable silver nanowire transparent conductive films meet the requirement for many significant applications and could play a key role in the display market in a near future.

  13. Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers

    International Nuclear Information System (INIS)

    Koike, Katsuhiko; Yamazaki, Fumiharu; Okamura, Tomoyuki; Fukuda, Shin

    2007-01-01

    An optical filter for plasma display panel (PDP) requires an electromagnetic shield with very high ability. The authors investigated a transparent conductive multilayer coating consisting of silver (Ag) layers and transparent metal oxide layers. The durability of the multilayer sputter coating, including the silver layer, is very sensitive to the surrounding atmosphere. For example, after an exposure test they found discolored points on the multilayer sputter coatings, possibly caused by migration of silver atoms in the silver layers. In their investigation, they modified the top surface of the multilayer sputter coatings with transition metals to improve the corrosion resistance of the multilayer coating. Specifically, they deposited transition metals 0.5-2 nm thick on the top surface of the multilayer coatings by sputtering. They chose indium tin oxide (ITO) as the transparent metal oxide. They applied the multilayer sputter coatings of seven layers to a polyethylene terephthalate (PET) film substrate. A cross-sectional structure of the film with the multilayer coatings is PET film/ITO/Ag/ITO/Ag/ITO/Ag/ITO. They evaluated the corrosion resistance of the films by a salt-water immersion test. In the test, they immersed the film with multilayer coatings into salt water, and then evaluated the appearance, transmittance, and electrical resistance of the multilayer coatings. They investigated several transition metals as the modifying material, and found that titanium and tantalum drastically improved the resistance of the multilayer coatings to the salt-water exposure without a significant decline in transmittance. They also investigated the relation between elapsed time after deposition of the modifying materials and resistance to the salt water. Furthermore, they investigated the effects of a heat treatment and an oxide plasma treatment on resistance to the salt water

  14. Transparent Conductive Adhesives for Tandem Solar Cells Using Polymer-Particle Composites

    Energy Technology Data Exchange (ETDEWEB)

    Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lee, Benjamin G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-02-14

    Transparent conductive adhesives (TCAs) can enable conductivity between two substrates, which is useful for a wide range of electronic devices. Here, we have developed a TCA composed of a polymer-particle blend with ethylene-vinyl acetate as the transparent adhesive and metal-coated flexible poly(methyl methacrylate) microspheres as the conductive particles that can provide conductivity and adhesion regardless of the surface texture. This TCA layer was designed to be nearly transparent, conductive in only the out-of-plane direction, and of practical adhesive strength to hold the substrates together. The series resistance was measured at 0.3 and 0.8 O cm2 for 8 and 0.2% particle coverage, respectively, while remaining over 92% was transparent in both cases. For applications in photovoltaic devices, such as mechanically stacked multijunction III-V/Si cells, a TCA with 1% particle coverage will have less than 0.5% power loss due to the resistance and less than 1% shading loss to the bottom cell.

  15. Formation of electrically conducting, transparent films using silver nanoparticles connected by carbon nanotubes

    International Nuclear Information System (INIS)

    Hwang, Sunna; Noh, Sun Young; Kim, Heesuk; Park, Min; Lee, Hyunjung

    2014-01-01

    To achieve both optical transparency and electrical conductivity simultaneously, we fabricated a single-walled carbon nanotube (SWNT)/silver fiber-based transparent conductive film using silver fibers produced by the electrospinning method. Electrospun silver fibers provided a segregated structure with the silver nanoparticles within the fibrous microstructures as a framework. Additional deposition of SWNT/poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS) layers resulted in a remarkable decrease in the surface resistance from very high value (> 3000 kΩ/sq) for the films of electrospun silver fibers, without affecting the optical transmittance at 550 nm. The surface resistance of the SWNT/silver film after the deposition of three layers decreased to 17 Ω/sq with 80% transmittance. Successive depositions of SWNT/PEDOT:PSS layers reduced the surface resistance to 2 Ω/sq without severe loss in optical transmittance (ca. 65%). The transparent conductive films exhibited a performance comparable to that of commercial indium tin oxide films. The individual silver nanoparticles within the electrospun fibers on the substrate were interconnected with SWNTs, which resulted in the efficient activation of a conductive network by bridging the gaps among separate silver nanoparticles. Such a construction of microscopically conductive networks with the minimum use of electrically conductive nanomaterials produced superior electrical conductivity, while maintaining the optical transparency. - Highlights: • Silver fibrous structures were produced by electrospinning method. • SWNTs/PEDOT:PSS was deposited on silver fibrous structures. • These films exhibited a low sheet resistance (∼ 17 Ω/sq) at ∼ 80% optical transparency. • Successive depositions of SWNT/PEDOT:PSS layers reduced the surface resistance to 2 Ω/sq

  16. Digital grayscale printing for patterned transparent conducting Ag electrodes and their applications in flexible electronics

    DEFF Research Database (Denmark)

    Gupta, Ritu; Hösel, Markus; Jensen, Jacob

    2014-01-01

    Grayscale (halftone) laser printing is developed as a low-cost and solution processable fabrication method for ITO-free, semi-transparent and conducting Ag electrodes extendable over large area on a flexible substrate. The transmittance and sheet resistance is easily tunable by varying the graysc...

  17. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail ...

  18. A simple and flexible route to large-area conductive transparent graphene thin-films

    NARCIS (Netherlands)

    Arapov, K.; Goryachev, A.; With, de G.; Friedrich, H.

    2015-01-01

    Solution-processed conductive, flexible and transparent graphene thin films continue drawing attention from science and technology due to their potential for many electrical applications. Here, an up-scalable method for the solution processing of graphite to graphene and further to self-assembled

  19. Current Spreading Layer with High Transparency and Conductivity for near-ultraviolet light emitting diodes

    DEFF Research Database (Denmark)

    Lin, Li; Jensen, Flemming; Herstrøm, Berit

    Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact....

  20. High Transparent Conductive Aluminum-Doped Zinc Oxide Thin Films by Reactive Co-Sputtering (Postprint)

    Science.gov (United States)

    2016-03-30

    30 Mar 2016. This document contains color . Journal article published in Optical Interference Coatings, 19 Jun 2016. © 2016 Optical Society of...Ahn, Mi-So Lee, Moon-Ho Ham , Woong Lee, Jae-Min Myoung, “Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive

  1. Fabrication of textured SnO2 transparent conductive films using self-assembled Sn nanospheres

    Science.gov (United States)

    Fukumoto, Michitaka; Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2018-06-01

    We present a novel method to fabricate textured surfaces on transparent conductive SnO2 films by processing substrates through a bottom-up technique with potential for industrially scalable production. The substrate processing consists of three steps: deposition of precursor Sn films on glass substrates, formation of a self-assembled Sn nanosphere layer with reductive annealing, and conversion of Sn to SnO2 by oxidative annealing. Ta-doped SnO2 films conformally deposited on the self-assembled nanospherical SnO2 templates exhibited attractive optical and electrical properties, namely, enhanced haze values and low sheet resistances, for applications as transparent electrodes in photovoltaics.

  2. Copper Nanowires and Their Applications for Flexible, Transparent Conducting Films: A Review

    Directory of Open Access Journals (Sweden)

    Vu Binh Nam

    2016-03-01

    Full Text Available Cu nanowires (NWs are attracting considerable attention as alternatives to Ag NWs for next-generation transparent conductors, replacing indium tin oxide (ITO and micro metal grids. Cu NWs hold great promise for low-cost fabrication via a solution-processed route and show preponderant optical, electrical, and mechanical properties. In this study, we report a summary of recent advances in research on Cu NWs, covering the optoelectronic properties, synthesis routes, deposition methods to fabricate flexible transparent conducting films, and their potential applications. This review also examines the approaches on protecting Cu NWs from oxidation in air environments.

  3. Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

    Directory of Open Access Journals (Sweden)

    Diana E. Proffit

    2010-11-01

    Full Text Available Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides Zn0, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.

  4. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  5. A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

    International Nuclear Information System (INIS)

    Fan Tian-Ju; Yuan Chun-Qiu; Tang Wei; Tong Song-Zhao; Huang Wei; Min Yong-Gang; Liu Yi-Dong; Epstein, Arthur J.

    2015-01-01

    We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO 3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476 Ω/sq and transmittance of 76% at 550 nm (6 layers). The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens. (paper)

  6. Applications of Silver Nanowires on Transparent Conducting Film and Electrode of Electrochemical Capacitor

    Directory of Open Access Journals (Sweden)

    Yuan-Jun Song

    2014-01-01

    Full Text Available Silver nanowire has potential applications on transparent conducting film and electrode of electrochemical capacitor due to its excellent conductivity. Transparent conducting film (G-film was prepared by coating silver nanowires on glass substrate using Meyer rod method, which exhibited better performance than carbon nanotube and graphene. The conductivity of G-film can be improved by increasing sintering temperature. Electrode of electrochemical capacitor (I-film was fabricated through the same method with G-film on indium tin oxide (ITO. CV curves of I-film under different scanning rates had obvious redox peaks, which indicated that I-film exhibited excellent electrochemical pseudocapacitance performance and good reversibility during charge/discharge process. In addition, the specific capacitance of I-film was measured by galvanostatic charge/discharge experiments, indicating that I-film exhibits high special capacitance and excellent electrochemical stability.

  7. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu

    2017-09-08

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large-area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band-offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible-range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.

  8. Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

    Science.gov (United States)

    Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

    2013-03-01

    A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

  9. Preparation of flexible and heat-resisting conductive transparent film by the pyrosol process

    International Nuclear Information System (INIS)

    Usami, Hisanao; Nakasa, Akihiko; Adachi, Mami; Suzuki, Eiji; Fujimatsu, Hitoshi; Ohashi, Tatsuya; Yamada, Shigeo; Tsugita, Kouhei; Taniguchi, Yoshio

    2006-01-01

    A pyrosol process was successfully applied for the preparation of a flexible, conductive, and transparent inorganic film, a tin-doped indium oxide (ITO) film lined with a thin mica layer. This flexible heat-resistant ITO-mica film exhibited high conductivity and transparency, comparable to ITO deposited on glass substrate. The minimum radius of bending for the film, without any recognizable change in the conductivity and appearance, was 8 mm. The ITO deposited on mica showed a large (222) diffraction peak with a smaller (400) peak, in contrast to ITO deposited with (400) orientation on an ordinary glass substrate. Using the ITO-mica film, a prototype model of a flexible organic light emitting diode was fabricated

  10. Highly conductive, transparent flexible films based on open rings of multi-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Ko, Wen-Yin; Su, Jun-Wei; Guo, Chian-Hua; Fu, Shu-Juan; Hsu, Chuen-Yuan; Lin, Kuan-Jiuh

    2011-01-01

    Open rings of multi-walled carbon nanotubes were stacked to form porous networks on a poly(ethylene terephthalate) substrate to form a flexible conducting film (MWCNT-PET) with good electrical conductivity and transparency by a combination of ultrasonic atomization and spin-coating technique. To enhance the electric flexibility, we spin-coated a cast film of poly(vinyl alcohol) onto the MWCNT-PET substrate, which then underwent a thermo-compression process. Field-emission scanning electron microscopy of the cross-sectional morphology illustrates that the film has a robust network with a thickness of ∼ 175 nm, and it remarkably exhibits a sheet resistance of approximately 370 Ω/sq with ∼ 77% transmittance at 550 nm even after 500 bending cycles. This electrical conductivity is much superior to that of other MWCNT-based transparent flexible films.

  11. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  12. The Preparation and Property of Graphene /Tin Oxide Transparent Conductive Film

    Directory of Open Access Journals (Sweden)

    SUN Tao

    2017-02-01

    Full Text Available Graphene doped tin oxide composites were prepared with SnCIZ·2HZ 0 and graphene oxide as raw materials with sol-gel method and then spincoated on the quartz glass to manufacture a new transparent conductive film. The composite film was characterized with X-ray diffraction(XRDand scanning electron microscopy(SEM analysis. XRD results show that the graphene oxide was successfully prepared with Hummers method. The graphene layers and particulate SnOZ can be clearly observed in SEM photos. The transmittance and conductivity of the thin films were tested with ultraviolet visible spectrophotometer and Hall effect measurement. The results show that the transmittivity of composite film in visible region is more than 90% and surface square resistance is 41 S2/口.The graphene/ SnOZ film exhibits a higher performance in transparence and conductivity than commercial FTO glass.

  13. Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

    International Nuclear Information System (INIS)

    Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng

    2013-01-01

    A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

  14. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    Energy Technology Data Exchange (ETDEWEB)

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  15. Bendable transparent conductive meshes based on multi-layer inkjet-printed silver patterns

    International Nuclear Information System (INIS)

    Yu, Po-Chin; Hong, Chien-Chong; Liou, Tong-Miin

    2016-01-01

    Many consumer electronics manufacturers have used transparent conductive films in solar cells, LED devices, and touch panels as a medium for simultaneous electric charge transportation and light transmission. The conductivity and transmittance of transparent conductive films greatly affect the efficiency of these optoelectronic devices. This study presents a transparent and conductive mesh based on inkjet-printed silver and conductive polymer. Also, we propose a mathematical model for calculating the optimized mesh pattern. The proposed model precisely calculates an optimized line-width-to-line-spacing ratio. Furthermore, the results of our experiment verify the relationship between the line-width-to-line-spacing ratio and figure of merit. Compared with the equations of past studies, the equation proposed in this study is valid for a broader range of line-width-to-line-spacing ratios. In addition, the theoretical results of our study correlate more strongly with the experimental data of this study than with that of previous studies. To achieve the highest figure of merit, the values of the filling factor and the line-width-to-line-spacing ratio should be 0.05 and 19, respectively. Finally, we reduced the sheet resistance of the inkjet-printed mesh by 97.9% by applying multilayer printing. However, we were able to reduce only the optical transmittance of the mesh by 3.0%. The developed inkjet-printed silver meshes can survive more than 3500 bending tests simultaneous with application of 300 mA current. (paper)

  16. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  17. Transparent Conducting Films with Multilayered Structures Formed by Carbon Nanotubes and Reduced Graphene Oxides

    International Nuclear Information System (INIS)

    Kang, Jie Hun; Jang, Hyun Chul; Choi, Jung Mi; Hyeon, Jae Young; Sok, Jung Hyun

    2014-01-01

    The replacement for indium tin oxide (ITO) in electronic displays should have comparable optical transmittance and electrical conductivity while being easy to source and manufacture. However, novel materials such as single walled carbon nanotubes (SWCNTs) and reduced graphene oxides (RGOs) are incapable of addressing these challenges. We demonstrate a simple method to fabricate good transparent conductive films (TCFs) by combining and leveraging the superior optical transparency of RGOs and the excellent electrical conductivity of SWCNTs. This method affords thin multilayers of SWCNTs and RGOs with excellent optical and electrical properties because these properties are correlated with spraying time and the amount of SWCNTs or RGOs. In general, transmittance is advantageous to RGO as conductance is to CNTs. With a view to finding good TCFs with reduced sheet resistance, but with little sacrifice of transmittance, it is natural to explore the combination of CNT and RGO. The sandwiched multilayer of SWCNTs and RGOs exhibited a low sheet resistance of 214.2 Ω/sq, which was comparable to that of SWCNTs, and a transmittance of 60% at a wavelength of 550 nm. To further reduce the sheet resistance and improve the transparency of the multilayer TCFs, Au doping was carried out. The doping, in combination with controlled spraying of the amount of SWCNTs and RGOs, led to multilayers with resistance/transmittance combinations of 141.3 Ω/sq and 70% and 371.5 Ω/sq and 83%. These properties meet the requisite criteria for an ITO replacement.

  18. Self-assembled large scale metal alloy grid patterns as flexible transparent conductive layers

    Science.gov (United States)

    Mohl, Melinda; Dombovari, Aron; Vajtai, Robert; Ajayan, Pulickel M.; Kordas, Krisztian

    2015-09-01

    The development of scalable synthesis techniques for optically transparent, electrically conductive coatings is in great demand due to the constantly increasing market price and limited resources of indium for indium tin oxide (ITO) materials currently applied in most of the optoelectronic devices. This work pioneers the scalable synthesis of transparent conductive films (TCFs) by exploiting the coffee-ring effect deposition coupled with reactive inkjet printing and subsequent chemical copper plating. Here we report two different promising alternatives to replace ITO, palladium-copper (PdCu) grid patterns and silver-copper (AgCu) fish scale like structures printed on flexible poly(ethylene terephthalate) (PET) substrates, achieving sheet resistance values as low as 8.1 and 4.9 Ω/sq, with corresponding optical transmittance of 79% and 65% at 500 nm, respectively. Both films show excellent adhesion and also preserve their structural integrity and good contact with the substrate for severe bending showing less than 4% decrease of conductivity even after 105 cycles. Transparent conductive films for capacitive touch screens and pixels of microscopic resistive electrodes are demonstrated.

  19. Controlled Synthesis of Monolayer Graphene Toward Transparent Flexible Conductive Film Application

    Directory of Open Access Journals (Sweden)

    Yu Han-Young

    2010-01-01

    Full Text Available Abstract We demonstrate the synthesis of monolayer graphene using thermal chemical vapor deposition and successive transfer onto arbitrary substrates toward transparent flexible conductive film application. We used electron-beam-deposited Ni thin film as a synthetic catalyst and introduced a gas mixture consisting of methane and hydrogen. To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850–1,000°C and 2–8°C/min, respectively. It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production. We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.

  20. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  1. Patterning of nanoparticulate transparent conductive ITO films using UV light irradiation and UV laser beam writing

    International Nuclear Information System (INIS)

    Solieman, A.; Moharram, A.H.; Aegerter, M.A.

    2010-01-01

    Indium tin oxide (ITO) thin film is one of the most widely used as transparent conductive electrodes in all forms of flat panel display (FPD) and microelectronic devices. Suspension of already crystalline conductive ITO nanoparticles fully dispersed in alcohol was spun, after modifying with coupling agent, on glass substrates. The low cost, simple and versatile traditional photolithography process without complication of the photoresist layer was used for patterning ITO films. Using of UV light irradiation through mask and direct UV laser beam writing resulted in an accurate linear, sharp edge and very smooth patterns. Irradiated ITO film showed a high transparency (∼85%) in the visible region. The electrical sheet resistance decrease with increasing time of exposure to UV light and UV laser. Only 5 min UV light irradiation is enough to decrease the electrical sheet resistance down to 5 kΩ□.

  2. Flexible transparent conductive materials based on silver nanowire networks: a review

    International Nuclear Information System (INIS)

    Langley, Daniel; Giusti, Gaël; Bellet, Daniel; Mayousse, Céline; Celle, Caroline; Simonato, Jean-Pierre

    2013-01-01

    The class of materials combining high electrical or thermal conductivity, optical transparency and flexibility is crucial for the development of many future electronic and optoelectronic devices. Silver nanowire networks show very promising results and represent a viable alternative to the commonly used, scarce and brittle indium tin oxide. The science and technology research of such networks are reviewed to provide a better understanding of the physical and chemical properties of this nanowire-based material while opening attractive new applications. (topical review)

  3. Preparation of transparent conducting zinc oxide films by rf reactive sputtering

    International Nuclear Information System (INIS)

    Vasanelli, L.; Valentini, A.; Losacco, A.

    1986-01-01

    Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

  4. Infrared transparency and electrical conductivity of non-stoichiometric InxOy films

    International Nuclear Information System (INIS)

    Joseph, Shay; Berger, Shlomo

    2010-01-01

    In an effort to achieve both high infrared transparency and electrical conductivity, In x O y films having different oxygen atomic fractions, ranging from 0.27 to 0.6 were prepared. From AC electrical measurements it was determined that conductivity of In x O y films, having oxygen atomic fraction near 0.6, is governed by the hopping conduction mechanism via energy states located in the band gap. Conductivity of In x O y films having non-stoichiometric compositions was found to be governed by the free band conduction mechanism. The conduction activation energy was decreased from about 0.47 eV to about 0.02 eV as the deviation of the oxygen atomic fraction from the stoichiometric value of 0.6 was increased. The dielectric function of the films was determined by applying the Drude-Lorentz model to ellipsometric measurements in the infrared and visible wavelengths. In the visible range, the major source for optical transmission loss is interband absorption, which was modeled by the Lorentz model. In the infrared range, optical absorption was measured and attributed to the presence of free charge carriers according to the Drude model. Fitting the model to the optical measurements required a correction factor, which was correlated with the films polarizability. In order to determine the optimal tradeoff between optical transparency in the infrared and electrical conductivity, which were found to be affected mainly by the oxygen concentration in the films, a figure of merit parameter was established. It was found that by introducing non-stoichiometry in the form of oxygen deficiency, the electrical conductivity was improved by as much as two orders of magnitude while the infrared transparency was decreased by no more than 30% with respect to stoichiometric In 2 O 3 films.

  5. Transparent conductive-polymer strain sensors for touch input sheets of flexible displays

    International Nuclear Information System (INIS)

    Takamatsu, Seiichi; Takahata, Tomoyuki; Muraki, Masato; Iwase, Eiji; Matsumoto, Kiyoshi; Shimoyama, Isao

    2010-01-01

    A transparent conductive polymer-based strain-sensor array, designed especially for touch input sheets of flexible displays, was developed. A transparent conductive polymer, namely poly(3, 4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), was utilized owing to its strength under repeated mechanical bending. PEDOT:PSS strain sensors with a thickness of 130 nm exhibited light transmittance of 92%, which is the same as the transmittance of ITO electrodes widely used in flat panel displays. We demonstrated that the sensor array on a flexible sheet was able to sustain mechanical bending 300 times at a bending radius of 5 mm. The strain sensor shows a gauge factor of 5.2. The touch point on a flexible sheet could be detected from histograms of the outputs of the strain sensors when the sheet was pushed with an input force of 5 N. The touch input could be detected on the flexible sheet with a curved surface (radius of curvature of 20 mm). These results show that the developed transparent conductive polymer-based strain-sensor array is applicable to touch input sheets of mechanically bendable displays.

  6. The structural and electro-optical characteristics of AZO/Cr:Cu/AZO transparent conductive film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tien-Chai [Department of Electrical Engineering, Kun Shan University, No. 195, Kun-Da Road, Yung-Kang Dist., Tainan 71003, Taiwan, ROC (China); Huang, Wen-Chang, E-mail: wchuang@mail.ksu.edu.tw [Department of Electro-Optical Engineering, Kun Shan University, No. 195, Kun-Da Road, Yung-Kang Dist., Tainan 71003, Taiwan, ROC (China); Tsai, Fu-Chun [Department of Electro-Optical Engineering, Kun Shan University, No. 195, Kun-Da Road, Yung-Kang Dist., Tainan 71003, Taiwan, ROC (China)

    2015-08-31

    A novel triple-layered transparent conductive film, AZO/Cr:Cu/AZO (ACCA), was presented in the paper. The structural and electro-optical properties of the ACCA film were discussed. The thickness of the middle metal layer was constant and those of the AZO layers were varied. The ACCA film shows an obvious ZnO (002) c-axis preferential growth. No diffraction peaks related to Cr and Cu were observed through x-ray diffraction analysis. The middle Cr:Cu layer showed a thickness of 8.16 nm with a continuous and amorphous structure by the observation of a high-resolution transmission electron microscopy (HR-TEM). For the electro-optical characteristic, a best figure of merit (FOM) value of 3.54 × 10{sup −3} Ω{sup −1} with a corresponding transmittance of 85% was obtained at the thickness of 116 nm of ACCA film. The high FOM value of the film is due to the improvement of conductivity and small sacrifices of transparency. - Highlights: • A novel triple-layered transparent conductive film, AZO/Cr:Cu/AZO is developed. • Chromium is added to copper to reduce the oxidation–reduction reaction. • The film has a FOM of 3.54 × 10{sup −3} Ω{sup −1} with a corresponding transmittance of 85%. • The Cr:Cu layer shows a continuous and amorphous structure.

  7. The structural and electro-optical characteristics of AZO/Cr:Cu/AZO transparent conductive film

    International Nuclear Information System (INIS)

    Lin, Tien-Chai; Huang, Wen-Chang; Tsai, Fu-Chun

    2015-01-01

    A novel triple-layered transparent conductive film, AZO/Cr:Cu/AZO (ACCA), was presented in the paper. The structural and electro-optical properties of the ACCA film were discussed. The thickness of the middle metal layer was constant and those of the AZO layers were varied. The ACCA film shows an obvious ZnO (002) c-axis preferential growth. No diffraction peaks related to Cr and Cu were observed through x-ray diffraction analysis. The middle Cr:Cu layer showed a thickness of 8.16 nm with a continuous and amorphous structure by the observation of a high-resolution transmission electron microscopy (HR-TEM). For the electro-optical characteristic, a best figure of merit (FOM) value of 3.54 × 10 −3 Ω −1 with a corresponding transmittance of 85% was obtained at the thickness of 116 nm of ACCA film. The high FOM value of the film is due to the improvement of conductivity and small sacrifices of transparency. - Highlights: • A novel triple-layered transparent conductive film, AZO/Cr:Cu/AZO is developed. • Chromium is added to copper to reduce the oxidation–reduction reaction. • The film has a FOM of 3.54 × 10 −3 Ω −1 with a corresponding transmittance of 85%. • The Cr:Cu layer shows a continuous and amorphous structure

  8. Formation of ultralong copper nanowires by hydrothermal growth for transparent conducting applications

    Science.gov (United States)

    Balela, Mary Donnabelle L.; Tan, Michael

    2017-07-01

    Transparent conducting electrodes are key components of optoelectronic devices, such as touch screens, organic light emitting diodes (OLEDs) and solar cells. Recent market surveys have shown that the demands for these devices are rapidly growing at a tremendous rate. Semiconducting oxides, in particular indium tin oxide (ITO) are the material of choice for transparent conducting electrodes. However, these conventional oxides are typically brittle, which limits their applicability in flexible electronics. Metal nanowires, e.g. copper (Cu) nanowires, are considered as the best candidate as substitute for ITO due to their excellent mechanical and electrical properties. In this paper, ultralong copper (Cu) nanowires with were successfully prepared by hydrothermal growth at 50-80°C for 1 h. Ethylenediamine was employed as the structure-directing agents, while hydrazine was used as the reductant. In situ mixed potential measurement was also carried out to monitor Cu deposition. Higher temperature shifted the mixed potential negatively, leading to thicker Cu nanowires. Transparent conducting electrode, with a sheet resistance of 197 Ω sq-1 at an optical transmittance of around 61 %, was fabricated with the Cu nanowire ink.

  9. Room temperature deposition of amorphous p-type CuFeO2 and ...

    Indian Academy of Sciences (India)

    fabrication of CuFeO2/n-Si heterojunction by RF sputtering method. TAO ZHU1 ... Transparent conducting amorphous p-type CuFeO2 (CFO) thin film was prepared by radio-frequency ... Delafossite oxides CuMO2 (M is trivalent cation, such as.

  10. Room temperature deposition of amorphous p-type CuFeO2 and ...

    Indian Academy of Sciences (India)

    2Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China. 3University of Science and Technology of China, Hefei 230026, China. MS received 14 October 2015; accepted 28 December 2015. Abstract. Transparent conducting amorphous p-type CuFeO2 (CFO) thin film was prepared by ...

  11. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  12. Bromination of Graphene: A New Route to Making High Performance Transparent Conducting Electrodes with Low Optical Losses

    KAUST Repository

    Mansour, Ahmed; Dey, Sukumar; Amassian, Aram; Tanielian, Minas H.

    2015-01-01

    The unique optical and electrical properties of graphene have triggered great interest in its application as a transparent conducting electrode material and significant effort has been invested in achieving high conductivity while maintaining

  13. Bromination of graphene: a new route to making high performance transparent conducting electrodes with low optical losses

    KAUST Repository

    Mansour, Ahmed; Amassian, Aram; Tanielian, Minas H.

    2015-01-01

    The high optical transmittance, electrical conductivity, flexibility and chemical stability of graphene have triggered great interest in its application as a transparent conducting electrode material and as a potential replacement for indium doped

  14. Facile Preparation of Carbon-Nanotube-based 3-Dimensional Transparent Conducting Networks for Flexible Noncontact Sensing Device

    KAUST Repository

    Tai, Yanlong; Lubineau, Gilles

    2016-01-01

    Here, we report the controllable fabrication of transparent conductive films (TCFs) for moisture-sensing applications based on heating-rate-triggered, 3-dimensional porous conducting networks of single-walled carbon nanotube (SWCNT)/poly(3

  15. Optical transparency and electrical conductivity of nonstoichiometric ultrathin InxOy films

    International Nuclear Information System (INIS)

    Joseph, Shay; Berger, Shlomo

    2011-01-01

    The effect of thickness and composition on the electrical conductivity and optical transparency, mainly in the infrared, of ultrathin In x O y films was studied. In x O y films 35-470 A thick with oxygen atomic fractions of ∼0.3 and ∼0.5 were prepared via dc magnetron sputtering. All films were polycrystalline, consisting of only the cubic bixbiyte phase of In 2 O 3 . The average grain size of the films increased from 30 to 95 nm as the film thickness increased. The weak dependence of the electrical conductivity on the frequency and the low activation energies for conduction, a few hundredths of an eV, provided an indication that free band conduction was the primary electrical conduction mechanism in the case of all ultrathin In x O y films. It was found that introducing a high degree of nonstoichiometry in the form of oxygen deficiency did not help improve the electrical conductivity, since not all vacancies contributed two free electrons for conduction and due to impurity scattering. The optical nature of these films, studied mainly by ellipsometry, was found to be dependent on the film's composition and thickness. In the infrared, the dielectric function of all In x O y films was consistent with the Drude model, inferring that the transparency loss in this region was a result of free charge carriers. In the visible however, In x O y films under 170 A, which had an oxygen atomic fraction of ∼0.5, were modeled by extending the Drude model to the shorter wavelengths. Films over 170 A, with the same composition, were modeled using the Cauchy dispersion model, meaning that no absorption was measured. These results indicate that, optically, under specific compositions, ultrathin In x O y films undergo a transition from metalliclike behavior to dielectric behavior with increasing film thickness. Using a figure of merit approach, it was determined that a nonstoichiometric 230 A thick In x O y film, with an oxygen atomic fraction of ∼0.3, had the best combination

  16. Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

    Science.gov (United States)

    Zhang, Lei

    Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

  17. Properties of TiO{sub 2}-based transparent conducting oxides

    Energy Technology Data Exchange (ETDEWEB)

    Hitosugi, Taro [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 980-8577 Sendai (Japan); Yamada, Naoomi; Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Department of Chemistry, University of Tokyo, 113-0033 Tokyo (Japan)

    2010-07-15

    The development and properties of titanium dioxide (TiO{sub 2})-based transparent conducting oxides (TCO), which exhibit properties comparable to those of In{sub 2-x}Sn{sub x}O{sub 3} (ITO), are reviewed in this article. An epitaxial thin film of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} exhibited a resistivity ({rho}) of 2.3 x 10{sup -4}{omega} cm and internal transmittance of {proportional_to}95% in the visible light region. Furthermore, we prepared polycrystalline films with {rho} of 6.4 x 10{sup -4}{omega} cm at room temperature on glass substrates by using sputtering. We focus on characteristics unique to TiO{sub 2}-based TCO, such as a high refractive index, high transmittance in infrared, and high stability in reducing atmospheres. Possible applications of TiO{sub 2}-based TCOs, as well as the mechanism of the transparent conducting properties found in this d-electron-based TCO, are discussed in this review. Photograph showing TiO{sub 2}-based TCO on a transparent plastic film. Note that the film appears greenish due to interference in the film originating from its high refractive index. This high refractive index is one of the unique characteristics of TiO{sub 2}-based TCO. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  18. Amorphous and crystalline In_2O_3-based transparent conducting films for photovoltaics

    International Nuclear Information System (INIS)

    Koida, Takashi

    2017-01-01

    We reported solar cells with reduced electrical and optical losses using hydrogen-doped In_2O_3 (In_2O_3:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In_2O_3:H films grown by magnetron sputtering. The polycrystalline (poly-) In_2O_3:H films exhibited electron mobilities (over 100 cm"2V"-"1 s"-"1) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In_2O_3-based TCO; (ii) the structural and optoelectrical properties of the a-In_2O_3:H and poly-In_2O_3:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. MOCVD growth of transparent conducting Cd2SnO4 thin films

    International Nuclear Information System (INIS)

    Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

    2004-01-01

    The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  20. Transparent and conductive polyethylene oxide film by the introduction of individualized single-walled carbon nanotubes.

    Science.gov (United States)

    Jung, Yong Chae; Muramatsu, Hiroyuki; Park, Ki Chul; Shimamoto, Daisuke; Kim, Jin Hee; Hayashi, Takuya; Song, Sung Moo; Kim, Yoong Ahm; Endo, Morinobu; Dresselhaus, Mildred S

    2009-12-16

    It is demonstrated that an optically transparent and electrically conductive polyethylene oxide (PEO) film is fabricated by the introduction of individualized single-walled carbon nanotubes (SWNTs). The incorporated SWNTs in the PEO film sustain their intrinsic electronic and optical properties and, in addition, the intrinsic properties of the polymer matrix are retained. The individualized SWNTs with smaller diameter provide high transmittance as well as good electrical conductivity in PEO films. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Structural study of TiO2-based transparent conducting films

    International Nuclear Information System (INIS)

    Hitosugi, T.; Yamada, N.; Nakao, S.; Hatabayashi, K.; Shimada, T.; Hasegawa, T.

    2008-01-01

    We have investigated microscopic structures of sputter and pulsed laser deposited (PLD) anatase Nb-doped TiO 2 transparent conducting films, and discuss what causes the degradation of resistivity in sputter-deposited films. Cross-sectional transmission electron microscope and polarized optical microscope images show inhomogeneous intragrain structures and small grains of ∼10 μm in sputter-deposited films. From comparison with PLD films, these results suggest that homogeneous film growth is the important factor to obtain highly conducting sputter-deposited film

  2. Improved Flexible Transparent Conductive Electrodes based on Silver Nanowire Networks by a Simple Sunlight Illumination Approach

    Science.gov (United States)

    Kou, Pengfei; Yang, Liu; Chang, Cheng; He, Sailing

    2017-01-01

    Silver nanowire (Ag NW) networks have attracted wide attention as transparent electrodes for emerging flexible optoelectronics. However, the sheet resistance is greatly limited by large wire-to-wire contact resistances. Here, we propose a simple sunlight illumination approach to remarkably improve their electrical conductivity without any significant degradation of the light transmittance. Because the power density is extremely low (0.1 W/cm2, 1-Sun), only slight welding between Ag NWs has been observed. Despite this, a sheet resistance of solar concentrations. Due to the reduced resistance, high-performance transparent film heaters as well as efficient defrosters have been demonstrated, which are superior to the previously-reported Ag NW based film heaters. Since the sunlight is environmentally friendly and easily available, sophisticated or expensive facilities are not necessary. Our findings are particularly meaningful and show enormous potential for outdoor applications. PMID:28169343

  3. Superior thermal conductivity of transparent polymer nanocomposites with a crystallized alumina membrane

    Directory of Open Access Journals (Sweden)

    Md. Poostforush

    2014-04-01

    Full Text Available The properties of novel thermoconductive and optically transparent nanocomposites have been reported. The composites were prepared by the impregnation of thermoset resin into crystallized anodic aluminum oxide (AAO. Crystallized AAO synthesized by annealing amorphous AAO membrane at 1200°C. Although through-plane thermal conductivity of nanocomposites improved up to 1.13 W•m–1•K–1 (39 vol% alumina but their transparency was preserved (Tλ550 nm ~ 72%. Integrated annealed alumina phase, low refractive index mismatch between resin and alumina and formation of nano-optical fibers through the membrane resulted in such marvel combination. This report shows a great potential of these types of nanocomposites in ‘heat management’ of lightening devices.

  4. Solution-processed assembly of ultrathin transparent conductive cellulose nanopaper embedding AgNWs

    Science.gov (United States)

    Song, Yuanyuan; Jiang, Yaoquan; Shi, Liyi; Cao, Shaomei; Feng, Xin; Miao, Miao; Fang, Jianhui

    2015-08-01

    Natural biomass based cellulose nanopaper is becoming a promising transparent substrate to supersede traditional petroleum based polymer films in realizing future flexible paper-electronics. Here, ultrathin, highly transparent, outstanding conductive hybrid nanopaper with excellent mechanical flexibility was synthesized by the assembly of nanofibrillated cellulose (NFC) and silver nanowires (AgNWs) using a pressured extrusion paper-making technique. The hybrid nanopaper with a thickness of 4.5 μm has a good combination of transparent conductive performance and mechanical stability using bamboo/hemp NFC and AgNWs cross-linked by hydroxypropylmethyl cellulose (HPMC). The heterogeneous fibrous structure of BNFC/HNFC/AgNWs endows a uniform distribution and an enhanced forward light scattering, resulting in high electrical conductivity and optical transmittance. The hybrid nanopaper with an optimal weight ratio of BNFC/HNFC to AgNWs shows outstanding synergistic properties with a transmittance of 86.41% at 550 nm and a sheet resistance of 1.90 ohm sq-1, equal to the electronic conductivity, which is about 500 S cm-1. The BNFC/HNFC/AgNW hybrid nanopaper maintains a stable electrical conductivity after the peeling test and bending at 135° for 1000 cycles, indicating remarkably strong adhesion and mechanical flexibility. Of importance here is that the high-performance and low-cost hybrid nanopaper shows promising potential for electronics application in solar cells, flexible displays and other high-technology products.Natural biomass based cellulose nanopaper is becoming a promising transparent substrate to supersede traditional petroleum based polymer films in realizing future flexible paper-electronics. Here, ultrathin, highly transparent, outstanding conductive hybrid nanopaper with excellent mechanical flexibility was synthesized by the assembly of nanofibrillated cellulose (NFC) and silver nanowires (AgNWs) using a pressured extrusion paper-making technique. The

  5. Highly Conductive, Transparent Flexible Films Based on Metal Nanoparticle-Carbon Nanotube Composites

    Directory of Open Access Journals (Sweden)

    Wen-Yin Ko

    2013-01-01

    Full Text Available Metallic nanoparticles decorated on MWCNTs based transparent conducting thin films (TCFs show a cheap and efficient option for the applications in touch screens and the replacement of the ITO film because of their interesting properties of electrical conductivity, mechanical property, chemical inertness, and other unique properties, which may not be accessible by their individual components. However, a great challenge that always remains is to develop effective ways to prepare junctions between metallic nanoparticles and MWCNTs for the improvement of high-energy barriers, high contact resistances, and weak interactions which could lead to the formation of poor conducting pathways and result in the CNT-based devices with low mechanical flexibility. Herein, we not only discuss recent progress in the preparation of MNP-CNT flexible TCFs but also describe our research studies in the relevant areas. Our result demonstrated that the MNP-CNT flexible TCFs we prepared could achieve a highly electrical conductivity with the sheet resistance of ~100 ohm/sq with ~80% transmittance at 550 nm even after being bent 500 times. This electrical conductivity is much superior to the performances of other MWCNT-based transparent flexible films, making it favorable for next-generation flexible touch screens and optoelectronic devices.

  6. Homogeneous transparent conductive ZnO:Ga by ALD for large LED wafers

    Energy Technology Data Exchange (ETDEWEB)

    Szabó, Zoltán; Baji, Zsófia [MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest (Hungary); Basa, Péter [Semilab Semiconductor Physics Laboratory Co. Ltd., Prielle K. u. 2, H-1117 Budapest (Hungary); Czigány, Zsolt; Bársony, István [MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest (Hungary); Wang, Hsin-Ying [Epistar corporation No 5, Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan (China); Volk, János, E-mail: volk@mfa.kfki.hu [MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest (Hungary)

    2016-08-30

    Highlights: • Highly conductive, transparent GZO layers were deposited by ALD. • The ALD layers show superior thickness and sheet resistance homogeneity for 4” wafers. • A two-step ALD deposition technique was proposed and demonstrated to improve the quality of GZO/p-GaN interface. - Abstract: Highly conductive and uniform Ga doped ZnO (GZO) films were prepared by atomic layer deposition (ALD) as transparent conductive layers for InGaN/GaN LEDs. The optimal Ga doping concentration was found to be 3 at%. Even for 4” wafers, the TCO layer shows excellent homogeneity of film resistivity (0.8 %) according to Eddy current and spectroscopic ellipsometry mapping. This makes ALD a favourable technique over concurrent methods like MBE and PLD where the up-scaling is problematic. In agreement with previous studies, it was found that by an annealing treatment the quality of the GZO/p-GaN interface can be improved, although it causes the degradation of TCO conductivity. Therefore, a two-step ALD deposition technique was proposed and demonstrated: a “buffer layer” deposited and annealed first was followed by a second deposition step to maintain the high conductivity of the top layer.

  7. Transparent conductive oxides and alternative transparent electrodes for organic photovoltaics and OLEDs; Transparente leitfaehige Elektroden. Oxide und alternative Materialien fuer die organische Photovoltaik und OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Mueller-Meskamp, Lars; Sachse, Christoph; Kim, Yong Hyun; Furno, Mauro [Technische Univ. Dresden (DE). Inst. fuer Angewandte Photophysik (IAPP); May, Christian [Fraunhofer Institut fuer Photonische Mikrosysteme (IPMS), Dresden (Germany); Leo, Karl [Technische Univ. Dresden (DE). Inst. fuer Angewandte Photophysik (IAPP); Fraunhofer Institut fuer Photonische Mikrosysteme (IPMS), Dresden (Germany)

    2012-08-15

    Organic, photoactive devices, such as OLEDs or organic solar cells, currently use indium tin oxide (ITO) as transparent electrode. Whereas ITO is industry-proven for many years and shows very good electrical and optical properties, its application for low-cost and flexible devices might not be optimal. For such applications innovative technologies such as network-based metal nanowire or carbon nanotube electrodes, graphene, conductive polymers, metal thin-films and alternative transparent conductive oxides emerge. Although some of these technologies are rather experimental and far from application, some of them have the potential to replace ITO in selected applications. (orig.)

  8. Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells

    International Nuclear Information System (INIS)

    Canteli Perez-Caballero, D.

    2015-01-01

    Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

  9. Stable iodide doping induced by photonic curing for carbon nanotube transparent conductive films

    Science.gov (United States)

    Wachi, Atsushi; Nishikawa, Hiroyuki; Zhou, Ying; Azumi, Reiko

    2018-06-01

    Doping has become crucial for achieving stable and high-performance conductive transparent carbon nanotube (CNT) films. In this study, we systematically investigate the doping effects of a few materials including alkali metal iodides, nonmetal iodide, and metals. We demonstrate that photonic curing can enhance the doping effects, and correspondingly improve the conductivity of CNT films, and that such iodides have better doping effects than metals. In particular, doping with a nonmetal compound (NH4I) shows the largest potential to improve the conductivity of CNT films. Typically, doping with metal iodides reduces the sheet resistance (R S) of CNT films with 70–80% optical transmittances at λ = 550 nm from 600–2400 to 250–440 Ω/square, whereas doping with NH4I reduces R S to 57 and 84 Ω/square at 74 and 84% optical transmittances, respectively. Interestingly, such a doped CNT film exhibits only a slight increase in sheet resistance under an extreme environment of high temperature (85 °C) and high relative humidity (85%) for 350 h. The results suggest that photonic-curing-induced iodide doping is a promising approach to producing high-performance conductive transparent CNT films.

  10. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  11. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.

    2010-08-11

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

  12. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  13. VO{sub x} effectively doping CVD-graphene for transparent conductive films

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Qinghua; Shi, Liangjing [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Qinghong [State Key Laboratory of Modification of Chemical Fibers and Polymer Materials, College of Material Science and Engineering, Donghua University, 2999 North Renmin Road, Shanghai 201620 (China); Wang, Weiqi; Zheng, Huifeng [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Yuzhi [The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China); Liu, Yangqiao, E-mail: yqliu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Sun, Jing, E-mail: jingsun@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2016-11-30

    Highlights: • Doping process operated easily. • Sheet resistance decreased efficiently after doping. • Sheet resistance of doped graphene is stable after exposed in the air. • Mechanism of doping process is studied. - Abstract: Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VO{sub x} doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86–90%. The optimized VO{sub x}-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VO{sub x} can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VO{sub x} species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VO{sub x} doped graphene is expected to be a promising candidate for transparent conductive film purposes.

  14. A Facile Method for Preparing Transparent, Conductive, and Paper-Like Silver Nanowire Films

    Directory of Open Access Journals (Sweden)

    Yajie Wang

    2011-01-01

    Full Text Available Transparent, conductive, and flexible silver nanowire (AgNW films have been fabricated by a facile two-step method. Firstly, the well-dispersed AgNW suspension is vacuum filtered using mixed esters of cellulose (MCE membranes as filters. Then, the AgNW-MCE films are treated with acetone vapor. After the infiltration of acetone vapor, the white and porous MCE membranes change into transparent and pore-free, and AgNW-MCE films are obtained with extraordinary optical, conductive, and mechanical properties. An optimal result is obtained with transmittance of 85% at 550 nm and sheet resistance about 50 Ohm/sq. The flexibility of AgNW-MCE films is remarkable, which is comparable to that of the AgNW film on flexible polyethylene terephthalate (PET. More important, AgNW-MCE films show an excellent adhesion to the substrate, which causes a stable electrical conductivity even after scotch tape test and finger friction test. As a result of improved adhesion to the substrate, the sheet resistance of AgNW-MCE films is about 20% smaller than that of AgNW-PET films.

  15. Features of Random Metal Nanowire Networks with Application in Transparent Conducting Electrodes

    KAUST Repository

    Maloth, Thirupathi

    2017-05-01

    Among the alternatives to conventional Indium Tin Oxide (ITO) used in making transparent conducting electrodes, the random metal nanowire (NW) networks are considered to be superior offering performance at par with ITO. The performance is measured in terms of sheet resistance and optical transmittance. However, as the electrical properties of such random networks are achieved thanks to a percolation network, a minimum size of the electrodes is needed so it actually exceeds the representative volume element (RVE) of the material and the macroscopic electrical properties are achieved. There is not much information about the compatibility of this minimum RVE size with the resolution actually needed in electronic devices. Furthermore, the efficiency of NWs in terms of electrical conduction is overlooked. In this work, we address the above industrially relevant questions - 1) The minimum size of electrodes that can be made based on the dimensions of NWs and the material coverage. For this, we propose a morphology based classification in defining the RVE size and we also compare the same with that is based on macroscopic electrical properties stabilization. 2) The amount of NWs that do not participate in electrical conduction, hence of no practical use. The results presented in this thesis are a design guide to experimentalists to design transparent electrodes with more optimal usage of the material.

  16. Preparation and Properties of Silver Nanowire-Based Transparent Conductive Composite Films

    Science.gov (United States)

    Tian, Ji-Li; Zhang, Hua-Yu; Wang, Hai-Jun

    2016-06-01

    Silver nanowire-based transparent conductive composite films with different structures were successfully prepared using various methods, including liquid polyol, magnetron sputtering and spin coating. The experimental results revealed that the optical transmittance of all different structural composite films decreased slightly (1-3%) compared to pure films. However, the electrical conductivity of all composite films had a great improvement. Under the condition that the optical transmittance was greater than 78% over the wavelength range of 400-800 nm, the AgNW/PVA/AgNW film became a conductor, while the AZO/AgNW/AZO film and the ITO/AgNW/ITO film showed 88.9% and 94% reductions, respectively, for the sheet resistance compared with pure films. In addition, applying a suitable mechanical pressure can improve the conductivity of AgNW-based composite films.

  17. Urea-assisted low temperature green synthesis of graphene nanosheets for transparent conducting film

    Science.gov (United States)

    Chamoli, Pankaj; Das, Malay K.; Kar, Kamal K.

    2018-02-01

    Present work demonstrates the fabrication of graphene nanosheet (GN) based transparent conducting film (TCF) using spray coating. Green synthesis of GN is carried out by reduction of graphene oxide (GO) using urea as green reducing agent. The reductive ability of urea with varied concentration is studied for GO at low temperature (i.e., 90 °C). As synthesized graphene nanosheets (GNs) are characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), UV-visible spectroscopy, field emission scanning electron microscopy (FESEM), atomic force microscope (AFM), and X-ray Photon spectroscopy (XPS). Raman analysis confirms that the maximum reduction of oxygen species is noticed using 30 mg/ml urea concentration at 90 °C from GO, and found Raman D to G band ratio (ID/IG) of ∼1.30. XPS analysis validates the Raman signature of removal of oxygen functional groups from GO, and obtained C/O ratio of ∼5.28. Further, transparent conducting films (TCFs) are fabricated using synthesized GNs. Thermal graphitization is carried out to enhance the optical and electrical properties of TCFs. TCF shows best performance when it is annealed at 900 °C for 1 h in vacuum, and obtained sheet resistance is ∼1.89 kΩ/□ with transmittance of ∼62.53%.

  18. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

    Science.gov (United States)

    Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

    2015-02-04

    In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

  19. Optical haze of randomly arranged silver nanowire transparent conductive films with wide range of nanowire diameters

    Directory of Open Access Journals (Sweden)

    M. Marus

    2018-03-01

    Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.

  20. Degradation studies of transparent conductive electrodes on electroactive poly(vinylidene fluoride for uric acid measurements

    Directory of Open Access Journals (Sweden)

    Vanessa F Cardoso, Pedro Martins, Gabriela Botelho, Luis Rebouta, Senentxu Lanceros-Méndez and Graca Minas

    2010-01-01

    Full Text Available Biochemical analysis of physiological fluids using, for example, lab-on-a-chip devices requires accurate mixing of two or more fluids. This mixing can be assisted by acoustic microagitation using a piezoelectric material, such as the β-phase of poly(vinylidene fluoride (β-PVDF. If the analysis is performed using optical absorption spectroscopy and β-PVDF is located in the optical path, the material and its conductive electrodes must be transparent. Moreover, if, to improve the transmission of the ultrasonic waves to the fluids, the piezoelectric transducer is placed inside the fluidic structures, its degradation must be assessed. In this paper, we report on the degradation properties of transparent conductive oxides, namely, indium tin oxide (ITO and aluminum-doped zinc oxide, when they are used as electrodes for providing acoustic microagitation. The latter promotes mixing of chemicals involved in the measurement of uric acid concentration in physiological fluids. The results are compared with those for aluminum electrodes. We find that β-PVDF samples with ITO electrodes do not degrade either with or without acoustic microagitation.

  1. Carbon Nanotube Networks Reinforced by Silver Nanowires with Improved Optical Transparency and Conductivity

    Science.gov (United States)

    Martine, Patricia; Fakhimi, Azin; Lin, Ling; Jurewicz, Izabela; Dalton, Alan; Zakhidov, Anvar A.; Baughman, Ray H.

    2015-03-01

    We have fabricated highly transparent and conductive free-standing nanocomposite thin film electrodes by adding silver nanowires (AgNWs) to dry-spun Multiwall Carbon Nanotube (MWNT) aerogels. This nanocomposite exhibits desirable properties such as high optical transmittance, excellent flexibility and enhanced electrical conductivity. The incorporation of the AgNWs to the MWNT aerogels was accomplished by using a spray coating method. The optical transparency and sheet resistance of the nanocomposite was tuned by adjusting the concentration of AgNWs, back pressure and nozzle distance of the spray gun to the MWNT aerogel during deposition. As the solvent evaporated, the aerogel MWNT bundles densified via surface tension which caused the MWNT bundles to collapse. This adjustable process was responsible in forming well defined apertures that increased the nanocomposite's transmittance up to 90 percent. Via AgNWs percolation and random interconnections between separate MWNT bundles in the aerogel matrix, the sheet resistance decreased from 1 K ohm/sq to less than 100 ohm/sq. Alan G. MacDiarmid NanoTech Institute

  2. Preparation and characterization of conductive and transparent ruthenium dioxide sol-gel films.

    Science.gov (United States)

    Allhusen, John S; Conboy, John C

    2013-11-27

    RuO2 conductive thin films were synthesized using the sol-gel method and deposited onto transparent insulating substrates. The optical transmission, film thickness, surface morphology and composition, resistivity, and spectroelectrochemical performance have been characterized. The optical transmission values of these films ranged from 70 to 89% in the visible region and from 56 to 88% in the infrared region. Resistivity values of the RuO2 sol-gel films varied from 1.02 × 10(-3) to 1.13 Ω cm and are highly dependent on the initial solution concentration of RuO2 in the sol-gel. The RuO2 sol-gel films were used as electrodes for the electrochemical oxidation and reduction of ferrocenemethanol. The electrochemical behavior of our novel RuO2 sol-gel films was compared to that of a standard platinum disk electrode and showed no appreciable differences in the half-wave potential (E1/2). The mechanical and chemical stability of the coatings was tested by physical abrasion and exposure to highly acidic, oxidizing Piranha solution. Repeated exposure to these extreme conditions did not result in any appreciable decline in electrochemical performance. Finally, the use of the novel RuO2 sol-gel conductive and transparent films was demonstrated in a spectroelectrochemistry experiment in which the oxidation and reduction of ferrocenemethanol was monitored via UV-vis spectroscopy as the applied potential was cycled.

  3. Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

    International Nuclear Information System (INIS)

    Kim, Taehee; Choi, Jin Young; Jeon, Jun Hong; Kim, Youn-Su; Kim, Bong-Soo; Lee, Doh-Kwon; Kim, Honggon; Han, Seunghee; Kim, Kyungkon

    2012-01-01

    Highlights: ► This work enhanced power conversion efficiency of the hybrid tandem solar cell from 1.0% to 2.6%. ► The interfacial series resistance of the tandem solar cell was eliminated by inserting ITO layer. ► This work shows the feasibility of the highly efficient hybrid tandem solar cells. -- Abstract: We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V OC = 1.041 V, J SC = 2.97 mA/cm 2 , FF = 32.3%) to 2.6% (V OC = 1.336 V, J SC = 4.65 mA/cm 2 , FF = 41.98%) due to the eliminated interfacial series resistance.

  4. Degradation studies of transparent conductive electrodes on electroactive poly(vinylidene fluoride) for uric acid measurements

    International Nuclear Information System (INIS)

    Cardoso, Vanessa F; Minas, Graca; Martins, Pedro; Rebouta, Luis; Lanceros-Mendez, Senentxu; Botelho, Gabriela

    2010-01-01

    Biochemical analysis of physiological fluids using, for example, lab-on-a-chip devices requires accurate mixing of two or more fluids. This mixing can be assisted by acoustic microagitation using a piezoelectric material, such as the β-phase of poly(vinylidene fluoride) (β-PVDF). If the analysis is performed using optical absorption spectroscopy and β-PVDF is located in the optical path, the material and its conductive electrodes must be transparent. Moreover, if, to improve the transmission of the ultrasonic waves to the fluids, the piezoelectric transducer is placed inside the fluidic structures, its degradation must be assessed. In this paper, we report on the degradation properties of transparent conductive oxides, namely, indium tin oxide (ITO) and aluminum-doped zinc oxide, when they are used as electrodes for providing acoustic microagitation. The latter promotes mixing of chemicals involved in the measurement of uric acid concentration in physiological fluids. The results are compared with those for aluminum electrodes. We find that β-PVDF samples with ITO electrodes do not degrade either with or without acoustic microagitation.

  5. Particles Size and Conductivity Study of P-Type Copper (I) Iodide (CuI) Thin Film for Solid State Dye-Sensitized Solar Cells

    International Nuclear Information System (INIS)

    Zainun, A R; Mamat, M H; Noor, U M; Rusop, M

    2011-01-01

    Copper Iodide based dye-sensitized solar cells (DSSC) has been reported either deliver small photocurrents or highly unstable. In this research, by added in a small amount of Tetra-methyl-ethylene-diamine (TMED) into CuI sol-gel (CuI in acetonitrile), performance of electrical properties and optical properties of CuI based DSSC have been studied. Particles size and conductivity of CuI solution were measured when addition of TMED to the sol at 0.05M concentrations. Spin-coating technique has been explored to prepare nano-crystalline CuI films at room temperature. The film was examined for their surface morphology, optical and electrical properties by field emission scanning electron microscope (FESEM), ultraviolet visible spectroscopy (UV-Vis), Photoluminescence (PL) and current-voltage (I-V) measurement respectively. The results were then compared with CuI sol-gel which prepared by dissolving CuI powder with acetonitrile only. It showed some improvement to the CuI-based DSSC by incorporation of a small quantity of TMED in the solution of precursor.

  6. Particle size and conductivity study of P-type copper (I) iodide (CuI) thin film for solid state dye sensitized solar cells

    International Nuclear Information System (INIS)

    Ayib Rosdi Zainun; Mohd Hafiz Mamat; Rusop, M.

    2009-01-01

    Full text: Copper Iodide based dye-sensitized solar cells (DSSC) has been reported either deliver small photocurrents or highly unstable. In this research, by added in a small amount of Tetra-methyl-ethylene-diamine (TMED) into CuI sol-gel (CuI in acetonitrile), performance of electrical properties and optical properties of CuI based DSSC have been studied. Particles size and conductivity of CuI solution were measured when addition of TMED to the sol at 0.05 M concentrations. Spin-coating technique has been explored to prepare nano-crystalline CuI films at room temperature. The film was examined for their surface morphology, optical and electrical properties by field emission scanning electron microscope (FESEM), ultraviolet visible spectroscopy (UV-Vis), Photoluminescence (PL) and current-voltage (I-V) measurement respectively. The results were then compared with CuI sol-gel which prepared by dissolving CuI powder with acetonitrile only. It showed some improvement to the CuI-based DSSC by incorporation of a small quantity of TMED in the solution of precursor. (author)

  7. Antireflective conducting nanostructures with an atomic layer deposited an AlZnO layer on a transparent substrate

    International Nuclear Information System (INIS)

    Park, Hyun-Woo; Ji, Seungmuk; Herdini, Diptya Suci; Lim, Hyuneui; Park, Jin-Seong; Chung, Kwun-Bum

    2015-01-01

    Graphical abstract: - Highlights: • We investigated the antireflective conducting nanostructures on a transparent substrate using atomic layer deposited AlZnO films. • The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance. • The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. • The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states. - Abstract: The antireflective conducting nanostructures on a transparent substrate were shown to have enhanced optical and electrical properties via colloidal lithography and atomic layer deposition. The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance, both of which were superior to those of a flat transparent conducting substrate. The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states.

  8. Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

    International Nuclear Information System (INIS)

    Carreras, Paz; Antony, Aldrin; Rojas, Fredy; Bertomeu, Joan

    2011-01-01

    Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn–In–Sn–O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 −4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

  9. Far-IR transparency and dynamic infrared signature control with novel conducting polymer systems

    Science.gov (United States)

    Chandrasekhar, Prasanna; Dooley, T. J.

    1995-09-01

    Materials which possess transparency, coupled with active controllability of this transparency in the infrared (IR), are today an increasingly important requirement, for varied applications. These applications include windows for IR sensors, IR-region flat panel displays used in camouflage as well as in communication and sight through night-vision goggles, coatings with dynamically controllable IR-emissivity, and thermal conservation coatings. Among stringent requirements for these applications are large dynamic ranges (color contrast), 'multi-color' or broad-band characteristics, extended cyclability, long memory retention, matrix addressability, small area fabricability, low power consumption, and environmental stability. Among materials possessing the requirements for variation of IR signature, conducting polymers (CPs) appear to be the only materials with dynamic, actively controllable signature and acceptable dynamic range. Conventional CPs such as poly(alkyl thiophene), poly(pyrrole) or poly(aniline) show very limited dynamic range, especially in the far-IR, while also showing poor transparency. We have developed a number of novel CP systems ('system' implying the CP, the selected dopant, the synthesis method, and the electrolyte) with very wide dynamic range (up to 90% in both important IR regions, 3 - 5 (mu) and 8 - 12 (mu) ), high cyclability (to 105 cycles with less than 10% optical degradation), nearly indefinite optical memory retention, matrix addressability of multi-pixel displays, very wide operating temperature and excellent environmental stability, low charge capacity, and processability into areas from less than 1 mm2 to more than 100 cm2. The criteria used to design and arrive at these CP systems, together with representative IR signature data, are presented in this paper.

  10. High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

    International Nuclear Information System (INIS)

    Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

    2017-01-01

    Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

  11. High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang, E-mail: genghz@tjpu.edu.cn; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

    2017-01-15

    Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

  12. Theoretical studies of optics and charge transport in organic conducting oligomers and polymers: Rational design of improved transparent and conducting polymers

    Science.gov (United States)

    Hutchison, Geoffrey Rogers

    Theoretical studies on a variety of oligo- and polyheterocycles elucidate their optical and charge transport properties, suggesting new, improved transparent conductive polymers. First-principles calculations provide accurate methodologies for predicting both optical band gaps of neutral and cationic oligomers and intrinsic charge transfer rates. Multidimensional analysis reveals important motifs in chemical tailorability of oligoheterocycle optical and charge transport properties. The results suggest new directions for design of novel materials. Using both finite oligomer and infinite polymer calculations, the optical band gaps in polyheterocycles follow a modified particle-in-a-box formalism, scaling approximately as 1/N (where N is the number of monomer units) in short chains, saturating for long chains. Calculations demonstrate that band structure changes upon heteroatom substitution, (e.g., from polythiophene to polypyrrole) derive from heteroatom electron affinity. Further investigation of chemical variability in substituted oligoheterocycles using multidimensional statistics reveals the interplay between heteroatom and substituent in correlations between structure and redox/optical properties of neutral and cationic species. A linear correlation between band gaps of neutral and cationic species upon oxidation of conjugated oligomers, shows redshifts of optical absorption for most species and blueshifts for small band gap species. Interstrand charge-transport studies focus on two contributors to hopping-style charge transfer rates: internal reorganization energy and the electronic coupling matrix element. Statistical analysis of chemical variability of reorganization energies in oligoheterocycles proves the importance of reorganization energy in determining intrinsic charge transfer rates (e.g., charge mobility in unsubstituted oligothiophenes). Computed bandwidths across several oligothiophene crystal packing motifs show similar electron and hole bandwidths

  13. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    International Nuclear Information System (INIS)

    Elen, Ken; Capon, Boris; De Dobbelaere, Christopher; Dewulf, Daan; Peys, Nick; Detavernier, Christophe; Hardy, An; Van Bael, Marlies K.

    2014-01-01

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum

  14. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Elen, Ken [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Strategisch Initiatief Materialen (SIM), SoPPoM Program (Belgium); Capon, Boris [Strategisch Initiatief Materialen (SIM), SoPPoM Programm (Belgium); Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); De Dobbelaere, Christopher [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Dewulf, Daan [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Peys, Nick [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Kapeldreef 75, B-3001 Heverlee (Belgium); Detavernier, Christophe [Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); Hardy, An [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

    2014-03-31

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum.

  15. Transparent conductive Ga-doped ZnO films fabricated by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Arne; Wagner, Alexander; Al-Suleiman, Mohamed Aid Mansur; Waag, Andreas; Bakin, Andrey [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Lugauer, Hans-Juergen; Strassburg, Martin; Walter, Robert; Weimar, Andreas [OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

    2012-04-15

    Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in a degradation of the underlying semiconductor material. In this work we report on a ''soft'' method for the fabrication of ZnO films as TCO layers by using metal organic chemical vapor deposition (MOCVD) at particularly low temperatures. The MOCVD approach has been studied focusing on the TCO key issues: fabrication temperature, morphology, optical, and electrical properties. Very smooth ZnO films with rms values down to 0.8 nm were fabricated at a substrate temperature of only 300 C. Ga-doping is well controllable even for high carrier concentrations up to 2 x 10{sup 20} cm{sup -3}, which is above the Mott-density leading to metallic-like behavior of the films. Furthermore all films show excellent optical transparency in the visible spectral range. As a consequence, our MOCVD approach is well suited for the soft fabrication of ZnO-based TCO layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    International Nuclear Information System (INIS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

    2012-01-01

    Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  17. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  18. Carbon nanotubes length optimization for preparation of improved transparent and conducting thin film substrates

    Directory of Open Access Journals (Sweden)

    Mansoor Farbod

    2017-03-01

    Full Text Available Transparent and conductive thin films of multiwalled carbon nanotubes (MWCNTs with different lengths were prepared on glass substrates by the spin coating method. In order to reduce the MWCNTs length, they were functionalized. The initial length of MWCNTs (10–15 μm was reduced to 1200, 205 and 168 nm after 30, 60 and 120 min refluxing time, respectively. After post annealing at 285 °C for 24 h, the electrical and optical properties were greatly improved for functionalized MWCNT thin films. They strongly depend on the length of CNTs. The optical transmittance of the film prepared using 30 min reflux CNTs was 2.6% and 6.6% higher than that of the 60 min and 120 min refluxed samples respectively. The sheet resistance of this film showed reductions of 45% and 80% as well. The film also exhibited the least roughness. The percolative figure of merit, which is proportional to the transparency and disproportional to the sheet resistance, was found to be higher for the sample with 30 min refluxed MWCNTs.

  19. Highly transparent and conductive thin films fabricated with nano-silver/double-walled carbon nanotube composites.

    Science.gov (United States)

    Lee, Shie-Heng; Teng, Chih-Chun; Ma, Chen-Chi M; Wang, Ikai

    2011-12-01

    This study develops a technique for enhancing the electrical conductivity and optical transmittance of transparent double-walled carbon nanotube (DWNT) film. Silver nanoparticles were modified with a NH(2)(CH(2))(2)SH self-assembled monolayer terminated by amino groups and subsequent surface condensation that reacted with functionalized DWNTs. Ag nanoparticles were grafted on the surface of the DWNTs. The low sheet resistance of the resulting thin conductive film on a polyethylene terephthalate (PET) substrate was due to the increased contact areas between DWNTs and work function by grafting Ag nanoparticles on the DWNT surfaces. Increasing the contact area between DWNTs and work function improved the conductivity of the DWNT-Ag thin films. The prepared DWNT-Ag thin films had a sheet resistance of 53.4 Ω/sq with 90.5% optical transmittance at a 550 nm wavelength. After treatment with HNO(3) and annealing at 150 °C for 30 min, a lower sheet resistance of 45.8 Ω/sq and a higher transmittance of 90.4% could be attained. The value of the DC conductivity to optical conductivity (σ(DC)/σ(OP)) ratio is 121.3. Copyright © 2011 Elsevier Inc. All rights reserved.

  20. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    International Nuclear Information System (INIS)

    Ding Xingwei; Yan Jinliang; Li Ting; Zhang Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO 2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO 2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO 2 /ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO 2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  1. Transparent conducting AZO and ITO films produced by pulsed laser ablation at 355 nm

    DEFF Research Database (Denmark)

    Thestrup, B.; Schou, Jørgen

    1999-01-01

    Thin films of aluminium-doped zinc oxide (AZO) and indium tin oxide (ITO) were deposited on glass substrates by laser ablation in an oxygen environment. The electrical and optical properties of films grown at various oxygen pressures were compared. With no substrate heating, highly transparent...... and conducting films were obtained with oxygen pressures between 15 and 23 mTorr for both materials. We obtained a specific resistivity of 1.8 x 10(-3) Omega cm for AZO and 1.1 x 10(-3) Omega cm for ITO. By heating the substrate to 160 degrees C or 200 degrees C, the resistivity was further reduced to 1.1 x 10......(-3) Omega cm for AZO and 3.9 x 10(-4) Omega cm for ITO. The average transmission of visible light (450-750 MI) was between 82% and 98% in most cases. The results suggest that AZO is a promising alternative to ITO....

  2. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  3. Transparent conducting sol-gel ATO coatings for display applications by an improved dip coating technique

    International Nuclear Information System (INIS)

    Guzman, G.; Dahmani, B.; Puetz, J.; Aegerter, M.A.

    2006-01-01

    Transparent conducting coatings of sol-gel ATO (antimony-doped tin oxide) were used to improve surface smoothness of commercial sputter-deposited ITO (indium tin oxide) coatings for application as display electrodes. In order to overcome the deteriorating evaporation-cooling during dip coating, the coating solution was heated moderately to 25 deg. C thus providing the substrate with the required heat. This way, the surface roughness of the ITO could be reduced with an only 45 nm thick ATO coating to R pv = 3.8 nm (R a = 0.4 nm) compared to 31 nm (3.8 nm) for the ITO substrate. Another benefit of such additional coating is the possibility to tailor surface properties of the electrodes in wide ranges. This was used to increase the work function of the ITO substrate from initially 4.3-4.6 eV to about 4.8-5.2 eV by the ATO coating

  4. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    Science.gov (United States)

    Ding, Xingwei; Yan, Jinliang; Li, Ting; Zhang, Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO2/ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  5. Fibrous flexible solid-type dye-sensitized solar cells without transparent conducting oxide

    International Nuclear Information System (INIS)

    Fan Xing; Chu Zengze; Chen Lin; Zhang Chao; Wang Fuzhi; Tang Yanwei; Sun Jianliang; Zou Dechun

    2008-01-01

    We have explored a type of all-solid fibrous flexible dye-sensitized solar cells without transparent conducting oxide based on a CuI electrolyte. The working electrode's substrate is a metal wire. Cu wire counterelectrode is twisted with the dye-sensitized and CuI-coated working electrode. The cell's apparent diameter is about 150 μm. The cell's current-voltage output depends little on the incident angle of light. A 4-cm-long fibrous cell's open-circuit voltage and short-circuit current generate 304 mV and 0.032 mA, respectively. The interfacial interaction between the two electrodes has a significant influence on the inner charge transfer of the cell

  6. Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

    Science.gov (United States)

    Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

    2015-03-01

    The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

  7. Roll-offset printed transparent conducting electrode for organic solar cells

    International Nuclear Information System (INIS)

    Kim, Inyoung; Kwak, Sun-Woo; Ju, Yeonkyeong; Park, Gun-Young; Lee, Taik-Min; Jang, Yunseok; Choi, Young-Man; Kang, Dongwoo

    2015-01-01

    Transparent conducting electrodes (TCEs) were developed through the roll-offset printing of Ag grid mesh patterns for the application of all-solution processed organic solar cells (OSCs). Due to the remarkable printability of roll-offset printing, the printed TCEs did not show the step coverage problem of subsequent thin layers, which was a chronic problem in other printing techniques. The control of ink cohesion was verified as a critical factor for the high printing quality, which was optimized by adding a polyurethane diol of 2 wt.%. The tensile strength of optimized Ag ink was 322 mN, which led to the clear patterning of Ag nanoparticles. The printed TCEs with different mesh densities of the Ag grid were designed to have a similar property of indium tin oxide (ITO). The measured sheet resistance was 13 Ω/□, and optical transmittance was 86%, including the glass substrate, which was found to be independent of wavelength in the visible spectrum, in contrast with the optical transmittance of ITO. To evaluate the TCE performance as bottom electrodes, all-solution processed OSCs were fabricated on top of the TCEs. The power conversion efficiency (PCE) of the OSCs increased with the increments of the mesh density due to the distinctive increase of the short circuit current density (J sc ), notwithstanding the similar transmittance and sheet resistance of the TCEs. In comparison with ITO, a higher PCE of OSCs was obtained because the printed TCEs with a high mesh density were able to facilitate effective current collection, leading to a significant increase of J sc . - Highlights: • Roll-offset printing provided a remarkable printability of Ag nano-ink. • Control of ink cohesion played a critical role on the patterning of Ag nano-ink. • Printed Ag mesh was used as a transparent conducting electrode. • Transparency and sheet resistance of printed Ag mesh can be designed simply. • Printed Ag mesh was effective for the current collection of organic solar

  8. Roll-offset printed transparent conducting electrode for organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Inyoung, E-mail: ikim@kimm.re.kr; Kwak, Sun-Woo; Ju, Yeonkyeong; Park, Gun-Young; Lee, Taik-Min; Jang, Yunseok; Choi, Young-Man; Kang, Dongwoo

    2015-04-01

    Transparent conducting electrodes (TCEs) were developed through the roll-offset printing of Ag grid mesh patterns for the application of all-solution processed organic solar cells (OSCs). Due to the remarkable printability of roll-offset printing, the printed TCEs did not show the step coverage problem of subsequent thin layers, which was a chronic problem in other printing techniques. The control of ink cohesion was verified as a critical factor for the high printing quality, which was optimized by adding a polyurethane diol of 2 wt.%. The tensile strength of optimized Ag ink was 322 mN, which led to the clear patterning of Ag nanoparticles. The printed TCEs with different mesh densities of the Ag grid were designed to have a similar property of indium tin oxide (ITO). The measured sheet resistance was 13 Ω/□, and optical transmittance was 86%, including the glass substrate, which was found to be independent of wavelength in the visible spectrum, in contrast with the optical transmittance of ITO. To evaluate the TCE performance as bottom electrodes, all-solution processed OSCs were fabricated on top of the TCEs. The power conversion efficiency (PCE) of the OSCs increased with the increments of the mesh density due to the distinctive increase of the short circuit current density (J{sub sc}), notwithstanding the similar transmittance and sheet resistance of the TCEs. In comparison with ITO, a higher PCE of OSCs was obtained because the printed TCEs with a high mesh density were able to facilitate effective current collection, leading to a significant increase of J{sub sc}. - Highlights: • Roll-offset printing provided a remarkable printability of Ag nano-ink. • Control of ink cohesion played a critical role on the patterning of Ag nano-ink. • Printed Ag mesh was used as a transparent conducting electrode. • Transparency and sheet resistance of printed Ag mesh can be designed simply. • Printed Ag mesh was effective for the current collection of organic

  9. Transparent Conducting Graphene Hybrid Films To Improve Electromagnetic Interference (EMI) Shielding Performance of Graphene.

    Science.gov (United States)

    Ma, Limin; Lu, Zhengang; Tan, Jiubin; Liu, Jian; Ding, Xuemei; Black, Nicola; Li, Tianyi; Gallop, John; Hao, Ling

    2017-10-04

    Conducting graphene-based hybrids have attracted considerable attention in recent years for their scientific and technological significance in many applications. In this work, conductive graphene hybrid films, consisting of a metallic network fully encapsulated between monolayer graphene and quartz-glass substrate, were fabricated and characterized for their electromagnetic interference shielding capabilities. Experimental results show that by integration with a metallic network the sheet resistance of graphene was significantly suppressed from 813.27 to 5.53 Ω/sq with an optical transmittance at 91%. Consequently, the microwave shielding effectiveness (SE) exceeded 23.60 dB at the K u -band and 13.48 dB at the K a -band. The maximum SE value was 28.91 dB at 12 GHz. Compared with the SE of pristine monolayer graphene (3.46 dB), the SE of graphene hybrid film was enhanced by 25.45 dB (99.7% energy attenuation). At 94% optical transmittance, the sheet resistance was 20.67 Ω/sq and the maximum SE value was 20.86 dB at 12 GHz. Our results show that hybrid graphene films incorporate both high conductivity and superior electromagnetic shielding comparable to existing ITO shielding modalities. The combination of high conductivity and shielding along with the materials' earth-abundant nature, and facile large-scale fabrication, make these graphene hybrid films highly attractive for transparent EMI shielding.

  10. Transparent conducting films of hierarchically nanostructured polyaniline networks on flexible substrates for high-performance gas sensors.

    Science.gov (United States)

    Bai, Shouli; Sun, Chaozheng; Wan, Pengbo; Wang, Cheng; Luo, Ruixian; Li, Yaping; Liu, Junfeng; Sun, Xiaoming

    2015-01-21

    Transparent chemical gas sensors are assembled from a transparent conducting film of hierarchically nanostructured polyaniline (PANI) networks fabricated on a flexible PET substrate, by coating silver nanowires (Ag NWs) followed by the in situ polymerization of aniline near the sacrificial Ag NW template. The sensor exhibits enhanced gas sensing performance at room temperature in both sensitivity and selectivity to NH3 compared to pure PANI film. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Preparation of smooth, flexible and stable silver nanowires- polyurethane composite transparent conductive films by transfer method

    Science.gov (United States)

    Bai, Shengchi; Wang, Haifeng; Yang, Hui; Zhang, He; Guo, Xingzhong

    2018-02-01

    Silver nanowires (AgNWs)-polyurethane (PU) composite transparent conductive films were fabricated via transfer method using AgNWs conductive inks and polyurethane as starting materials, and the effects of post-treatments including heat treatment, NaCl solution bath and HCl solution bath for AgNWs film on the sheet resistance and transmittance of the composite films were respectively investigated in detail. AgNWs networks are uniformly embedded in the PU layer to improve the adhesion and reduce the surface roughness of AgNWs-PU composite films. Heat treatment can melt and weld the nanowires, and NaCl and HCl solution baths promote the dissolution and re-deposition of silver and the dissolving of the polymer, both which form conduction pathways and improve contact of AgNWs for reducing the sheet resistance. Smooth and flexible AgNWs-PU composite film with a transmittance of 85% and a sheet resistance of 15 Ω · sq‑1 is obtained after treated in 0.5 wt% HCl solution bath for 60 s, and the optoelectronic properties of the resultant composite film can maintain after 1000 cycles of bending and 100 days.

  12. Bromination of Graphene: A New Route to Making High Performance Transparent Conducting Electrodes with Low Optical Losses

    KAUST Repository

    Mansour, Ahmed

    2015-07-22

    The unique optical and electrical properties of graphene have triggered great interest in its application as a transparent conducting electrode material and significant effort has been invested in achieving high conductivity while maintaining transparency. Doping of graphene has been a popular route for reducing its sheet resistance, but this has typically come at a significant cost in optical transmission. We demonstrate doping of few layers graphene with bromine as a means of enhancing the conductivity via intercalation without major optical losses. Our results demonstrate the encapsulation of bromine leads to air-stable transparent conducting electrodes with five-fold improvement of sheet resistance reaching at the cost of only 2-3% loss of optical transmission. The remarkably low tradeoff in optical transparency leads to the highest enhancements in the figure of merit reported thus far for FLG. Furthermore, we tune the workfunction by up to 0.3 eV by tuning the bromine content. These results should help pave the way for further development of graphene as a potential substitute to transparent conducting polymers and metal oxides used in optoelectronics, photovoltaics and beyond.

  13. Improvement of the optoelectronic properties of tin oxide transparent conductive thin films through lanthanum doping

    Energy Technology Data Exchange (ETDEWEB)

    Mrabet, C., E-mail: chokri.mrabet@hotmail.com; Boukhachem, A.; Amlouk, M.; Manoubi, T.

    2016-05-05

    This work highlights some physical investigations on tin oxide thin films doped with different lanthanum content (ratio La–to-Sn = 0–3%). Such doped thin films have been successfully grown by spray pyrolysis onto glass substrates at 450 °C. X-ray diffraction (XRD) patterns showed that SnO{sub 2}:La thin films were polycrystalline with tetragonal crystal structure. The preferred orientation of crystallites for undoped SnO{sub 2} thin film was along (110) plane, whereas La-doped ones have rather preferential orientations along (200) direction. Although the grain size values exhibited a decreasing tendency with increasing doping content confirming the role of La as a grain growth inhibitor, dislocation density and microstrain values showed an increasing tendency. Also, Raman spectroscopy shows the bands corresponding to the tetragonal structure for the entire range of La doping. The same technique confirms the presence of La{sub 2}O{sub 3} as secondary phase. Moreover, SEM images showed a porous architecture with presence of big clusters with different sizes and shapes resulting from the agglomeration of small grains round shaped. Photoluminescence spectra of SnO{sub 2}:La thin films exhibit a decrease in the emission intensity with La concentration due to the decrease in grain size. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region. The dispersion of the refractive index is discussed using both Cauchy model and Wemple–Di-Domenico method. The optical band gap values vary slightly with La doping and were found to be around 3.8 eV. It has been found that La doping causes a pronounced decrease in the sheet resistance by up to two orders of magnitude and allows improving the Haacke's figure of merit (Φ) of the sprayed thin films. Moreover, we have introduced for a first time a new figure of merit for qualifying photo-thermal conversion applications. The obtained high conducting and transparent SnO{sub 2}:La

  14. Bromination of graphene: a new route to making high performance transparent conducting electrodes with low optical losses

    KAUST Repository

    Mansour, Ahmed

    2015-09-03

    The high optical transmittance, electrical conductivity, flexibility and chemical stability of graphene have triggered great interest in its application as a transparent conducting electrode material and as a potential replacement for indium doped tin oxide. However, currently available large scale production methods such as chemical vapor deposition produce polycrystalline graphene, and require additional transfer process which further introduces defects and impurities resulting in a significant increase in its sheet resistance. Doping of graphene with foreign atoms has been a popular route for reducing its sheet resistance which typically comes at a significant loss in optical transmission. Herein, we report the successful bromine doping of graphene resulting in air-stable transparent conducting electrodes with up to 80% reduction of sheet resistance reaching ~180 Ω/ at the cost of 2-3% loss of optical transmission in case of few layer graphene and 0.8% in case of single layer graphene. The remarkably low tradeoff in optical transparency leads to the highest enhancements in figure of merit reported thus far. Furthermore, our results show a controlled increase in the workfunction up to 0.3 eV with the bromine content. These results should help pave the way for further development of graphene as potentially a highly transparent substitute to other transparent conducting electrodes in optoelectronic devices.

  15. Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

    Science.gov (United States)

    Ali, D.; Butt, M. Z.; Coughlan, C.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

    2018-04-01

    We have investigated the properties and conduction limitations of spray pyrolysis grown, low-cost transparent conducting oxide ZnO thin films doped with indium. We analyze the optical, electrical, and crystallographic properties as functions of In content with a specific focus on postgrowth heat treatment of these thin films at 320 ∘C in an inert, nitrogen atmosphere, which improves the films electrical properties considerably. The effect was found to be dominated by nitrogen-induced grain-boundary passivation, identified by a combined study using i n situ resistance measurement upon annealing, x-ray photoelectron spectroscopy, photoluminescence, and x-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. By optimizing growth conditions according to these findings, ZnO:In with a resistivity as low as 2 ×10 -3Ω cm , high optical quality (T ≈90 % ), and sheet resistance of 32 Ω /□ has been obtained without any need for postgrowth treatments.

  16. Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lee, Benjamin G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nemeth, William M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); LaSalvia, Vincenzo A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-03-14

    The rear side metallization of Si solar cells comes with a number of inherent losses and trade-offs: a larger metallized area fraction improves fill factor at the expense of open-circuit voltage, depositing directly on textured Si leads to low contact resistivity at the expense of short-circuit current, and some metallization processes create defects in Si. To mitigate many of these losses we have developed a novel approach for rear side metallization of Si solar cells, utilizing a transparent conducting adhesive (TCA) to metallize Si without exposing the wafer to the metal deposition process. The TCA consists of an insulating adhesive loaded with conductive microspheres. This approach leads to virtually no loss in implied open-circuit voltage upon metallization. Electrical measurements showed that contact resistivities of 3-9 ..omega.. cm2 were achieved, and an analysis of the transit resistance per microsphere showed that less than 1 ..omega.. cm2 should be achievable with higher microsphere loading of the TCA.

  17. Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

    International Nuclear Information System (INIS)

    Wu Wei; Yu Qingkai; Pei, Shin-Shem; Peng Peng; Bao Jiming; Liu Zhihong

    2012-01-01

    Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications. (paper)

  18. Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

    Directory of Open Access Journals (Sweden)

    Shao-Kai Lu

    2014-03-01

    Full Text Available In this study, we utilize the RF magnetron sputtering system to deposit the indium tin oxide (ITO conductive transparent film with low resistivity and high light transmittance to the polyethylene tetephthalate (PET plastic substrate and measure the film’s bending property and reliability at different tensile/compressive strain bending curvatures as well as the flexibility after cycling bending. The results show that the critical curvatures corresponded to the significant increase in the resistance of the 150 nm-thick ITO film deposited onto the PET substrate under tensile and compressive stress areO 14.1 mm and 5.4 mm, respectively. By observing the film’s surface crack and morphology, we can further discover that the critical curvature of the crack generated when the film is bent is quite consistent with the critical curvature at which the conductivity property degrades, and the film can withstand a higher compressive strain bending. In addition, the resistance and adhesion behavior of the film almost is unchanged after cycling bent for 1000 times with the curvature below the critical curvature.

  19. Silver nanowire-graphene hybrid transparent conductive electrodes for highly efficient inverted organic solar cells

    Science.gov (United States)

    Ye, Neng; Yan, Jielin; Xie, Shuang; Kong, Yuhan; Liang, Tao; Chen, Hongzheng; Xu, Mingsheng

    2017-07-01

    Silver nanowires (AgNWs) and graphene are both promising candidates as a transparent conductive electrode (TCE) to replace expensive and fragile indium tin oxide (ITO) TCE. A synergistically optimized performance is expected when the advantages of AgNWs and graphene are combined. In this paper, the AgNW-graphene hybrid electrode is constructed by depositing a graphene layer on top of the network of AgNWs. Compared with the pristine AgNWs electrode, the AgNW-graphene TCE exhibits reduced sheet resistance, lower surface roughness, excellent long-term stability, and corrosion resistance in corrosive liquids. The graphene layer covering the AgNWs provides additional conduction pathways for electron transport and collection by the electrode. Benefiting from these advantages of the hybrid electrodes, we achieve a power conversion efficiency of 8.12% of inverted organic solar cells using PTB7:PC71BM as the active layer, which is compared to that of the solar cells based on standard ITO TCE but about 10% higher than that based on AgNWs TCE.

  20. Stable and Controllable Synthesis of Silver Nanowires for Transparent Conducting Film

    Science.gov (United States)

    Liu, Bitao; Yan, Hengqing; Chen, Shanyong; Guan, Youwei; Wu, Guoguo; Jin, Rong; Li, Lu

    2017-03-01

    Silver nanowires without particles are synthesized by a solvothermal method at temperature 150 °C. Silver nanowires are prepared via a reducing agent of glycerol and a capping agent of polyvinylpyrrolidone ( M w ≈ 1,300,000). Both of them can improve the purity of the as-prepared silver nanowires. With controllable shapes and sizes, silver nanowires are grown continuously up to 10-20 μm in length with 40-50 nm in diameter. To improve the yield of silver nanowires, the different concentrations of AgNO3 synthesis silver nanowires are discussed. The characterizations of the synthesized silver nanowires are analyzed by UV-visible absorption spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscope (AFM), and silver nanowires are pumped on the cellulose membrane and heated stress on the PET. Then, the cellulose membrane is dissolved by the steam of acetone to prepare flexible transparent conducting thin film, which is detected 89.9 of transmittance and 58 Ω/□. Additionally, there is a close loop connected by the thin film, a blue LED, a pair of batteries, and a number of wires, to determinate directly the film if conductive or not.

  1. Synthesis and Characterization of Graphene/ITO Nanoparticle Hybrid Transparent Conducting Electrode

    Institute of Scientific and Technical Information of China (English)

    Jae-Kwan Kim; Ji-Myon Lee

    2018-01-01

    The combination of graphene with conductive nanoparticles, forming graphene–nanoparticle hybrid materials, offers a number of excellent properties for advanced engineering applications. A novel and simple method was developed to deposit 10 wt% tin-doped indium tin oxide (ITO) nanoparticles on graphene. The method involved a combination of a solution-based environmen-tally friendly electroless deposition approach and subse-quent vacuum annealing.A stable organic-free solution of ITO was prepared from economical salts of In(NO3)3?H2O and SnCl4. The obtained ITO nanostructure exhibited a unique architecture, with uniformly dispersed 25–35 nm size ITO nanoparticles, containing only the crystallized In2O3phase.The synthesized ITO nanoparticles–graphene hybrid exhibited very good and reproducible optical transparency in the visible range (more than 85%) and a 28.2% improvement in electrical conductivity relative to graphene synthesized by chemical vapor deposition.It was observed that the ITO nanoparticles affect the position of the Raman signal of graphene,in which the D,G,and 2D peaks were redshifted by 5.65, 5.69, and 9.74 cm-1,respectively, and the annealing conditions had no signifi-cant effect on the Raman signatures of graphene.

  2. Flexural Capability of Patterned Transparent Conductive Substrate by Performing Electrical Measurements and Stress Simulations

    Directory of Open Access Journals (Sweden)

    Chang-Chun Lee

    2016-10-01

    Full Text Available The suitability of stacked thin films for next-generation display technology was analyzed based on their properties and geometrical designs to evaluate the mechanical reliability of transparent conducting thin films utilized in flexural displays. In general, the high bending stress induced by various operation conditions is a major concern regarding the mechanical reliability of indium–tin–oxide (ITO films deposited on polyethylene terephthalate (PET substrates; mechanical reliability is commonly used to estimate the flexibility of displays. However, the pattern effect is rarely investigated to estimate the mechanical reliability of ITO/PET films. Thus, this study examined the flexible content of patterned ITO/PET films with two different line widths by conducting bending tests and sheet resistance measurements. Moreover, a stress–strain simulation enabled by finite element analysis was performed on the patterned ITO/PET to explore the stress impact of stacked film structures under various levels of flexural load. Results show that the design of the ITO/PET film can be applied in developing mechanically reliable flexible electronics.

  3. Flexible transparent conductive films combining flexographic printed silver grids with CNT coating

    International Nuclear Information System (INIS)

    Mo, Lixin; Fang, Yi; Zhai, Qingbin; Li, Luhai; Ran, Jun; Yang, Li

    2016-01-01

    A high-performance ITO-free transparent conductive film (TCF) has been made by combining high resolution Ag grids with a carbon nanotube (CNT) coating. Ag grids printed with flexography have a 20 μm line width at a grid interval of 400 μm. The Ag grid/CNT hybrid film exhibits excellent overall performance, with a typical sheet resistance of 14.8 Ω/□ and 82.6% light transmittance at room temperature. This means a 23.98% reduction in sheet resistance and only 2.52% loss in transmittance compared to a pure Ag grid film. Analysis indicates that filling areas between the Ag grids and interconnecting the silver nanoparticles with the CNT coating are the primary reasons for the significantly improved conductivity of the hybrid film that also exhibits excellent flexibility and mechanical strength compared to an ITO film. The hybrid film may fully satisfy the requirements of different applications, e.g. use as the anode of polymer solar cells (PSCs). The J–V curve shows that the power conversion efficiency (PCE) of the PSCs using the Ag grid/CNT hybrid anode is 0.61%, which is 24.5% higher than that of the pure Ag grids with a PCE of 0.49%. Further investigations to improve the performance of the solar cells based on the printed hybrid TCFs are ongoing. (paper)

  4. Synthesis and Characterization of Graphene/ITO Nanoparticle Hybrid Transparent Conducting Electrode

    Science.gov (United States)

    Hemasiri, Bastian Waduge Naveen Harindu; Kim, Jae-Kwan; Lee, Ji-Myon

    2018-03-01

    The combination of graphene with conductive nanoparticles, forming graphene-nanoparticle hybrid materials, offers a number of excellent properties for advanced engineering applications. A novel and simple method was developed to deposit 10 wt% tin-doped indium tin oxide (ITO) nanoparticles on graphene. The method involved a combination of a solution-based environmentally friendly electroless deposition approach and subsequent vacuum annealing. A stable organic-free solution of ITO was prepared from economical salts of In(NO3) 3 · H2O and SnCl4. The obtained ITO nanostructure exhibited a unique architecture, with uniformly dispersed 25-35 nm size ITO nanoparticles, containing only the crystallized In2O3 phase. The synthesized ITO nanoparticles-graphene hybrid exhibited very good and reproducible optical transparency in the visible range (more than 85%) and a 28.2% improvement in electrical conductivity relative to graphene synthesized by chemical vapor deposition. It was observed that the ITO nanoparticles affect the position of the Raman signal of graphene, in which the D, G, and 2D peaks were redshifted by 5.65, 5.69, and 9.74 cm-1, respectively, and the annealing conditions had no significant effect on the Raman signatures of graphene. [Figure not available: see fulltext.

  5. On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

    Energy Technology Data Exchange (ETDEWEB)

    Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-08-25

    Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

  6. A high-performance, flexible and robust metal nanotrough-embedded transparent conducting film for wearable touch screen panels

    Science.gov (United States)

    Im, Hyeon-Gyun; An, Byeong Wan; Jin, Jungho; Jang, Junho; Park, Young-Geun; Park, Jang-Ung; Bae, Byeong-Soo

    2016-02-01

    We report a high-performance, flexible and robust metal nanotrough-embedded transparent conducting hybrid film (metal nanotrough-GFRHybrimer). Using an electro-spun polymer nanofiber web as a template and vacuum-deposited gold as a conductor, a junction resistance-free continuous metal nanotrough network is formed. Subsequently, the metal nanotrough is embedded on the surface of a glass-fabric reinforced composite substrate (GFRHybrimer). The monolithic composite structure of our transparent conducting film allows simultaneously high thermal stability (24 h at 250 °C in air), a smooth surface topography (Rrms touch screen panel (TSP) is fabricated using the transparent conducting films. The flexible TSP device stably operates on the back of a human hand and on a wristband.We report a high-performance, flexible and robust metal nanotrough-embedded transparent conducting hybrid film (metal nanotrough-GFRHybrimer). Using an electro-spun polymer nanofiber web as a template and vacuum-deposited gold as a conductor, a junction resistance-free continuous metal nanotrough network is formed. Subsequently, the metal nanotrough is embedded on the surface of a glass-fabric reinforced composite substrate (GFRHybrimer). The monolithic composite structure of our transparent conducting film allows simultaneously high thermal stability (24 h at 250 °C in air), a smooth surface topography (Rrms touch screen panel (TSP) is fabricated using the transparent conducting films. The flexible TSP device stably operates on the back of a human hand and on a wristband. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07657a

  7. Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

    International Nuclear Information System (INIS)

    Lluscà, M.; López-Vidrier, J.; Lauzurica, S.; Sánchez-Aniorte, M.I.; Antony, A.; Molpeceres, C.; Hernández, S.; Garrido, B.; Bertomeu, J.

    2015-01-01

    Transparent and conducting ZnO:Er:Yb thin films with visible up-conversion (660-nm emission under 980-nm excitation) were fabricated by RF magnetron sputtering. The as-deposited films were found to be transparent and conducting and the activation of the Er ions in these films to produce up-conversion luminescence was achieved by different post-deposition annealing treatments in air, vacuum or by laser annealing using a Nd:YVO 4 laser. The structural, electrical and optical properties and the up-conversion efficiency of these films were found to be strongly influenced by the annealing method, and a detailed study is reported in this paper. It has been demonstrated that, although the air annealing was the most efficient in terms of up-conversion, laser annealing was the only method capable of activating Er ions while preserving the electrical conductivity of the doped films. It has been shown that a minimum energy was needed in laser annealing to optically activate the rare earth ions in the ZnO host material to produce up-conversion. Up-converting and transparent conducting ZnO:Er:Yb films with an electrical resistivity of 5×10 −2 Ω cm and transparency ~80% in the visible wavelength range has been achieved by laser annealing. - Highlights: • Transparent and conducting ZnO:Er:Yb films were grown via magnetron sputtering. • Post-annealing ZnO:Er:Yb is needed to optically activate Er ions. • Visible up-conversion emission at 660 nm is observed under 980 nm excitation. • A transparent and conducting up-converter is achieved by laser annealing

  8. Three-dimensionally embedded indium tin oxide (ITO) films in photosensitive glass: a transparent and conductive platform for microdevices

    International Nuclear Information System (INIS)

    Beke, S.; Sugioka, K.; Midorikawa, K.; Koroesi, L.; Dekany, I.

    2011-01-01

    A new method for embedding transparent and conductive two- and three-dimensional microstructures in glass is presented. We show that the internal surface of hollow structures fabricated by femtosecond-laser direct writing inside the photosensitive glass can be coated by indium tin oxide (Sn-doped In 2 O 3 , ITO) using a sol-gel process. The idea of combining two transparent materials with different electrical properties, i.e., insulating and conductive, is very promising and hence it opens new prospects in manufacturing cutting edge microdevices, such as lab-on-a-chips (LOCs) and microelectromechanical systems (MEMS). (orig.)

  9. The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2015-01-01

    Full Text Available This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

  10. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  11. Characterization of a new transparent-conducting material of ZnO doped ITO thin films

    Science.gov (United States)

    Ali, H. M.

    2005-11-01

    Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S o for the thin films were determined and presented in this work.

  12. Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

    CERN Document Server

    Barbosa, M B; Redondo-Cubero, A; Miranda, S M C; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Méndez, B; Johnston, K; Alves, E; Vianden, R; Araújo, J P; Lorenz, K; Correia, J G

    2013-01-01

    The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\\,$min.) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe-defect complex. The ternary Cd$_x$Zn$_{1-x}$O (x=0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga$_2$O$_3$ samples, the substitution of the Cd probes in the octahedral Ga-site was observed, demonstrating the potential of ion-implantation for the doping of nanowires.

  13. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    Science.gov (United States)

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  14. Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

    Science.gov (United States)

    Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

    2017-04-01

    High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

  15. ITO with embedded silver grids as transparent conductive electrodes for large area organic solar cells

    Science.gov (United States)

    Patil, Bhushan R.; Mirsafaei, Mina; Piotr Cielecki, Paweł; Fernandes Cauduro, André Luis; Fiutowski, Jacek; Rubahn, Horst-Günter; Madsen, Morten

    2017-10-01

    In this work, development of semi-transparent electrodes for efficient large area organic solar cells (OSCs) has been demonstrated. Electron beam evaporated silver grids were embedded in commercially available ITO coatings on glass, through a standard negative photolithography process, in order to improve the conductivity of planar ITO substrates. The fabricated electrodes with embedded line and square patterned Ag grids reduced the sheet resistance of ITO by 25% and 40%, respectively, showing optical transmittance drops of less than 6% within the complete visible light spectrum for both patterns. Solution processed bulk heterojunction OSCs based on PTB7:[70]PCBM were fabricated on top of these electrodes with cell areas of 4.38 cm2, and the performance of these OSCs was compared to reference cells fabricated on pure ITO electrodes. The Fill Factor (FF) of the large-scale OSCs fabricated on ITO with embedded Ag grids was enhanced by 18% for the line grids pattern and 30% for the square grids pattern compared to that of the reference OSCs. The increase in the FF was directly correlated to the decrease in the series resistance of the OSCs. The maximum power conversion efficiency (PCE) of the OSCs was measured to be 4.34%, which is 23% higher than the PCE of the reference OSCs. As the presented method does not involve high temperature processing, it could be considered a general approach for development of large area organic electronics on solvent resistant, flexible substrates.

  16. Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

    International Nuclear Information System (INIS)

    Xu, Yingtian; Dai, Jun; Shi, Zhifeng; Long, Beihong; Wu, Bin; Cai, Xupu; Chu, Xianwei; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2014-01-01

    In this paper, n-ZnO single microwire/p + -Si heterojunction LEDs are fabricated using the transparent conductive ITO film as an electrode. A distinct UV emission resulting from free exciton recombination in a ZnO single microwire is observed in the electroluminescence. Size difference of ZnO single microwire shows significant influence on emission efficiency. The EL spectra of n-ZnO single microwire/p-Si heterostructure exhibited relatively stronger UV emission which was compared with the EL spectra of n-ZnO single nanowire/p-Si heterostructure and n-ZnO film/p-Si heterostructure, respectively. - Highlights: • The ZnO microwires were synthesized with a vapor phase transport method. • ZnO single microwire/Si LEDs were fabricated using the ITO film as an electrode. • The EL spectra had been compared with n-ZnO film/p-Si heterostructure. • The EL spectra had been compared with n-ZnO single nanowire/p-Si heterostructure

  17. Transparent conducting thin films by co-sputtering of ZnO-ITO targets

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo Antonio; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-04-15

    Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  19. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  20. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    International Nuclear Information System (INIS)

    Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

    2008-01-01

    We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

  1. Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

    Science.gov (United States)

    Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

    2014-01-01

    The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

  2. Improved Laser Scribing of Transparent Conductive Oxide for Fabrication of Thin-Film Solar Module

    Science.gov (United States)

    Egorov, F. S.; Kukin, A. V.; Terukov, E. I.; Titov, A. S.

    2018-04-01

    Nonuniform thickness of the front transparent conductive oxide (TCO) used for fabrication of thin-film solar module (TFSM) based on micromorphic technology affects P1 laser scribing (P1 scribing on the TCO front layer). A method for improvement of the thickness uniformity of the front TCO using modification of the existing system for gas supply of the LPCVD (TCO1200) vacuum setup with the aid of gasdistributing tubes is proposed. The thickness nonuniformity of the deposition procedure is decreased from 15.2 to 11.4% to improve uniformity of the resistance of the front TCO and light-scattering factor of TFSM. In addition, the number of P1 laser scribes with inadmissible resistance of insulation (less than 2 MΩ) is decreased by a factor of 7. A decrease in the amount of melt at the P1 scribe edges leads to an increase in the TFSM shunting resistance by 56 Ω. The TFSM output power is increased by 0.4 W due to improvement of parameters of the front TCO related to application of gas-distributing tubes.

  3. MoOx modified ZnGaO based transparent conducting oxides

    Science.gov (United States)

    Dutta, Titas; Gupta, P.; Bhosle, V.; Narayan, J.

    2009-03-01

    We report here the growth of high work function bilayered structures of thin MoOx (2.0MoOx layer, molybdenum exists in Mo4+, Mo5+, and Mo6+ oxidation states, and the ratio of (Mo4++Mo5+) to Mo6+ was determined to be ˜2:1. The bilayer films showed good optical transparency (≥80%) and low resistivity of ˜10-4 Ω cm. Different transport behavior of the MoOx/ZnGa0.05O films grown at different Ts (substrate temperature) was observed in temperature-dependent resistivity measurements. The bilayer film at higher Ts showed metallic conductivity behavior down to 113 K. Moreover, a blueshift of the absorption edge in the transmission spectrum was observed with the increase in Ts, indicating an increase in the carrier concentration. It was observed that the ZnGa0.05O films with ultrathin MoOx (˜1-2 nanometers) overlayer showed a higher work function (varying from 4.7 to 5.1 eV) as compared to the single layer ZnGa0.05O film work function (˜4.4 eV). A correlation between the surface work function and MoOx layer thickness is observed. The higher work function of the MoOx overlayer is envisaged to improve the transport of the carriers across the heterojunction in a solid state device, thus resulting an increase in device efficiency.

  4. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  5. High conductivity and transparent aluminum-based multi-layer source/drain electrodes for thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zhang, Hongke; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Li, Xiaoqing; Zhang, Xiaochen; Cai, Wei; Lu, Xubing; Peng, Junbiao

    2018-02-01

    In this study, high conductivity and transparent multi-layer (AZO/Al/AZO-/Al/AZO) source/drain (S/D) electrodes for thin film transistors were fabricated via conventional physical vapor deposition approaches, without toxic elements or further thermal annealing process. The 68 nm-thick multi-layer films with excellent optical properties (transparency: 82.64%), good electrical properties (resistivity: 6.64  ×  10-5 Ω m, work function: 3.95 eV), and superior surface roughness (R q   =  0.757 nm with scanning area of 5  ×  5 µm2) were fabricated as the S/D electrodes. Significantly, comprehensive performances of AZO films are enhanced by the insertion of ultra-thin Al layers. The optimal transparent TFT with this multi-layer S/D electrodes exhibited a decent electrical performance with a saturation mobility (µ sat) of 3.2 cm2 V-1 s-1, an I on/I off ratio of 1.59  ×  106, a subthreshold swing of 1.05 V/decade. The contact resistance of AZO/Al/AZO/Al/AZO multi-layer electrodes is as low as 0.29 MΩ. Moreover, the average visible light transmittance of the unpatterned multi-layers constituting a whole transparent TFT could reach 72.5%. The high conductivity and transparent multi-layer S/D electrodes for transparent TFTs possessed great potential for the applications of the green and transparent displays industry.

  6. Fabrication of a transparent ultraviolet detector by using n-type Ga2O3 and p-type Ga-doped SnO2 core-shell nanowires.

    Science.gov (United States)

    Hsu, Cheng-Liang; Lu, Ying-Ching

    2012-09-21

    This study investigates the feasibility of synthesizing high-density transparent Ga(2)O(3)/SnO(2):Ga core-shell nanowires on a sapphire substrate at 1000 °C by VLS. The doping Ga concentrations are 0.46, 1.07, 2.30 and 17.53 atomic%. The XRD spectrum and HR-TEM reveal Ga(2)O(3) and SnO(2) as having monoclinic and tetragonal rutile structures, respectively. Experimental results indicate that the XRD peak shift of SnO(2) to a larger angle increases with the increasing amount of Ga doping. According to the CL spectrum, SnO(2) and Ga(2)O(3) peak at approximately 528-568 nm and 422-424 nm, respectively. The maximum quantum efficiency of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 0.362%. The UV light on-off current contrast ratio of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 1066.7 at a bias of 5 V. Moreover, the dynamic response of Ga(2)O(3)/SnO(2):Ga core-shell nanowires has an on-off current contrast ratio of around 16. Furthermore, the Ga(2)O(3) region functions similar to a capacitor and continues to accumulate SnO(2):Ga excited electrons under UV light exposure.

  7. Fabrication of transparent conductive tri-composite film for electrochromic application

    Science.gov (United States)

    Choi, Dahyun; Lee, Minji; Kim, Hyungsub; Chu, Won-shik; Chun, Doo-man; Ahn, Sung-Hoon; Lee, Caroline Sunyong

    2017-12-01

    A transparent conductive electrode (TCE) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was developed using a dry deposition method for application as an electrochromic (EC) device. To improve its electrical conductivity and stable EC performance, AgNW and TiO2 nanoparticles were included in the TCE film. The resulting TiO2/AgNW/PEDOT:PSS hybrid film showed electrical sheet resistivity of 23 Ω/sq., similar to that of a commercial TCE film. When +2.0 V was applied to the hybrid film, the response current was stable, maintaining a value of 2.0 mA. We found that the hybrid film could be used as an EC device, without using commercial TCE film. Antimony-doped tin oxide on indium-doped tin oxide-glass as an ion-storage layer was combined with the hybrid film, with 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (EMIM-TFSI) injected into the EC device as an ionic liquid electrolyte. The optical transmittance difference between the colored and bleached states was 23% at 630 nm; under applied voltages of -2.0 V and +2.0 V, the coloration efficiency was 127.83 cm2/C. Moreover, cyclic transmittance with switching voltage for 3 h showed stable optical transmittance of 31% at 630 nm. Cyclic voltammetry measurements indicated stable behavior over 50 cycles. Thus, the proposed TCE configuration (TiO2/AgNW/PEDOT:PSS) shows great potential as a substitute for commercial TCEs, the cost of which depends on the availability of rare-earth materials.

  8. High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

    NARCIS (Netherlands)

    Macco, B.; Wu, Y.; Vanhemel, D.; Kessels, W.M.M.

    2014-01-01

    The preparation of high-quality In2O3:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In2O3:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown

  9. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens

    International Nuclear Information System (INIS)

    Madaria, Anuj R; Kumar, Akshay; Zhou Chongwu

    2011-01-01

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ DC /σ Op , for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ TE . Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  10. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens.

    Science.gov (United States)

    Madaria, Anuj R; Kumar, Akshay; Zhou, Chongwu

    2011-06-17

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ(DC)/σ(Op), for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ(TE). Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  11. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

    2012-01-01

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

  12. An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

    NARCIS (Netherlands)

    Morales-Masis, M.; Dauzou, F.; Jeangros, Q.; Dabirian, A.; Lifka, H.; Gierth, R.; Ruske, M.; Moet, D.; Hessler-Wyser, A.; Ballif, C.

    2016-01-01

    Flexible large-area organic light-emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin-doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are

  13. Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free

    Science.gov (United States)

    Hssein, Mehdi; Cattin, Linda; Morsli, Mustapha; Addou, Mohammed; Bernède, Jean-Christian

    2016-05-01

    Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used [1]. Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x [2]. Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/ MoO3-x (10 nm). The sheet resistance of this structure is Rsq = 5.2 Ω/sq. and its transmittance is Tmax = 65%. The factor of merit ϕM = T10/Rsq. = 2.41 × 10-3 Ω-1, which made this new TCE promising as anode in organic solar cells. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  14. Co-sputtered ZnO:Si thin films as transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

    2012-12-01

    Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

  15. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Takahiro [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan); Kawaharamura, Toshiyuki [Research Institute, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); School of Systems Engineering, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); Fujita, Shizuo, E-mail: fujitasz@kuee.kyoto-u.ac.jp [Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520 (Japan); Orita, Hiroyuki [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan)

    2015-12-31

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10{sup −4} Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac){sub 2}], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH{sub 3} to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10{sup −3} Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac){sub 2}] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10{sup −3} Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  16. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    International Nuclear Information System (INIS)

    Shirahata, Takahiro; Kawaharamura, Toshiyuki; Fujita, Shizuo; Orita, Hiroyuki

    2015-01-01

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10"−"4 Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac)_2], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH_3 to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10"−"3 Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac)_2] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10"−"3 Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  17. Controlling the optical performance of transparent conducting oxides using direct laser interference patterning

    International Nuclear Information System (INIS)

    Berger, Jana; Roch, Teja; Correia, Stelio; Eberhardt, Jens; Lasagni, Andrés Fabián

    2016-01-01

    In this study, a laser based process called Direct Laser Interference Patterning (DLIP) was used to fabricate micro-textured boron doped zinc oxide (ZnO:B) thin films to be used as electrodes in thin-film silicon solar cells. First, the ablation thresholds of the ZnO:B film were determined using a nanosecond pulsed laser at wavelengths of 266 and 355 nm (100 mJ/cm"2 and 89 mJ/cm"2, respectively). After that, DLIP experiments were performed at 355 nm wavelength. Line-like periodic surface structures with spatial periods ranging from 0.8 to 5.0 μm were fabricated using two interfering laser beams. It was found that the structuring process of the transparent conducting oxide (TCO) is mainly based on a photo-thermal mechanism. The surface of the ZnO:B film was molten and evaporated at the interference maxima positions and the depth and width of the generated microfeatures depend on the laser parameters as well as the spatial period of the interference pattern. The optical properties of the structured TCOs were investigated as a function of the utilized laser processing parameters. Both diffuse and total transmission and the intensity of the diffraction orders were determined. These data were used to calculate the increase of the optical path of the transmitted light. - Highlights: • Direct Laser Interference Patterning (DLIP) on boron doped zinc oxide (LPCVD-ZnO:B) • No relevant decrease of total transmission • Periods of 1.5 μm provide large diffraction angle and good diffraction intensity. • Significant increase of optical path length could be reached.

  18. Controlling the optical performance of transparent conducting oxides using direct laser interference patterning

    Energy Technology Data Exchange (ETDEWEB)

    Berger, Jana; Roch, Teja [Fraunhofer-Institut für Werkstoff-und Strahltechnik IWS, Winterbergstr. 28, 01277 Dresden (Germany); Technische Universität Dresden, Institute of Manufacturing Technology, George-Baehr-Str.1, 01069 Dresden (Germany); Correia, Stelio; Eberhardt, Jens [Bosch Solar Energy AG, August-Broemel-Str. 6, 99310 Arnstadt (Germany); Lasagni, Andrés Fabián, E-mail: andres_fabian.lasagni@tu-dresden.de [Fraunhofer-Institut für Werkstoff-und Strahltechnik IWS, Winterbergstr. 28, 01277 Dresden (Germany); Technische Universität Dresden, Institute of Manufacturing Technology, George-Baehr-Str.1, 01069 Dresden (Germany)

    2016-08-01

    In this study, a laser based process called Direct Laser Interference Patterning (DLIP) was used to fabricate micro-textured boron doped zinc oxide (ZnO:B) thin films to be used as electrodes in thin-film silicon solar cells. First, the ablation thresholds of the ZnO:B film were determined using a nanosecond pulsed laser at wavelengths of 266 and 355 nm (100 mJ/cm{sup 2} and 89 mJ/cm{sup 2}, respectively). After that, DLIP experiments were performed at 355 nm wavelength. Line-like periodic surface structures with spatial periods ranging from 0.8 to 5.0 μm were fabricated using two interfering laser beams. It was found that the structuring process of the transparent conducting oxide (TCO) is mainly based on a photo-thermal mechanism. The surface of the ZnO:B film was molten and evaporated at the interference maxima positions and the depth and width of the generated microfeatures depend on the laser parameters as well as the spatial period of the interference pattern. The optical properties of the structured TCOs were investigated as a function of the utilized laser processing parameters. Both diffuse and total transmission and the intensity of the diffraction orders were determined. These data were used to calculate the increase of the optical path of the transmitted light. - Highlights: • Direct Laser Interference Patterning (DLIP) on boron doped zinc oxide (LPCVD-ZnO:B) • No relevant decrease of total transmission • Periods of 1.5 μm provide large diffraction angle and good diffraction intensity. • Significant increase of optical path length could be reached.

  19. Silver nanowire based flexible electrodes with improved properties: High conductivity, transparency, adhesion and low haze

    International Nuclear Information System (INIS)

    Kiran Kumar, A.B.V.; Wan Bae, Chang; Piao, Longhai; Kim, Sang-Ho

    2013-01-01

    Graphical abstract: This graphical abstract illustrates the schematic representation of the main drawbacks and rectifications for AgNWs based transparent electrodes. - Highlights: • Films exhibited low sheet resistance and optical properties with R s ≤ 30 Ω/□ and T ≥ 90%. • We decreased haze to 2% by controlling AgNWs length, diameter, and concentration. • We achieved good adhesion for AgNWs on PET film. • There is no significant change in resistance in the bending angle from 0° to 180°, and on twisting. - Abstract: Recent work has been focusing on solution processable transparent electrodes for various applications including solar cells and displays. As well as, the research aims majorly at silver nanowires (AgNWs) to replace ITO. We enhance the transparent electrode performance as a function of optical and mechanical properties with low sheet resistance, by controlling the AgNWs accept ratios, ink composition, and processing conditions. The nanowire network of transparent films agrees with the 2D percolation law. The film transmittance values at 550 nm are coping with a reference ITO film. Sheet resistance and haze values are suitable for flexible electronic applications. We fabricate transparent flexible film using a low-cost processing technique

  20. Silver nanowire based flexible electrodes with improved properties: High conductivity, transparency, adhesion and low haze

    Energy Technology Data Exchange (ETDEWEB)

    Kiran Kumar, A.B.V.; Wan Bae, Chang; Piao, Longhai, E-mail: piaolh@kongju.ac.kr; Kim, Sang-Ho, E-mail: sangho1130@kongju.ac.kr

    2013-08-01

    Graphical abstract: This graphical abstract illustrates the schematic representation of the main drawbacks and rectifications for AgNWs based transparent electrodes. - Highlights: • Films exhibited low sheet resistance and optical properties with R{sub s} ≤ 30 Ω/□ and T ≥ 90%. • We decreased haze to 2% by controlling AgNWs length, diameter, and concentration. • We achieved good adhesion for AgNWs on PET film. • There is no significant change in resistance in the bending angle from 0° to 180°, and on twisting. - Abstract: Recent work has been focusing on solution processable transparent electrodes for various applications including solar cells and displays. As well as, the research aims majorly at silver nanowires (AgNWs) to replace ITO. We enhance the transparent electrode performance as a function of optical and mechanical properties with low sheet resistance, by controlling the AgNWs accept ratios, ink composition, and processing conditions. The nanowire network of transparent films agrees with the 2D percolation law. The film transmittance values at 550 nm are coping with a reference ITO film. Sheet resistance and haze values are suitable for flexible electronic applications. We fabricate transparent flexible film using a low-cost processing technique.

  1. Convenient preparation of ITO nanoparticles inks for transparent conductive thin films

    International Nuclear Information System (INIS)

    Ito, Daisuke; Masuko, Keiichiro; Weintraub, Benjamin A.; McKenzie, Lallie C.; Hutchison, James E.

    2012-01-01

    Tin-doped indium oxide (ITO) nanoparticles are useful precursors to transparent electrodes in a variety of technologically important applications. We synthesized ITO nanoparticles from indium and tin acetylacetonates in oleyl alcohol using a novel temperature ramp profile. The monodispersed ITO nanoparticles have an average diameter of 8.6 nm and form dense, flat films by simple spin coating. The thickness of the film can be controlled by varying the number of additional depositions. The resulting ITO film is transparent and has a resistivity of 7 × 10 −3 Ω cm after sintering at 300 °C. Using a suitable solvent, it is possible to coat high-aspect-ratio structures with ITO nanoparticles. This approach to ITO coatings is greener and offers a number of advantages for transparent electrodes because it is highly versatile, easily scalable, and supports low-cost manufacturing.

  2. A novel technique for increase the figure of merit of indium-tin oxide transparent conducting coatings

    International Nuclear Information System (INIS)

    Keshmiri, S.H.; Roknabadi, M.R.

    1999-01-01

    Indium-Tin Oxide (ITO) films have been used as transparent electrodes in many optoelectronic devices. Although the free electron concentration in these films can be rather high, but due to low drift mobilities, the electrical conductivity of ITO films are much lower than that of metals. This is mainly due to high concentration of trapping centers created by structural defects in an ITO film. In this article, a simple technique is explained for post-deposition hydrogenation of ITO films. It was found that exposure of ITO films to atomic-hydrogen plasma produced a significant increases in the electrical conductivity of the films. At the optimum condition, an increase of about 330% in the electrical conductivity of an ITO film was observed. The hydrogenation process did not affect optical transparency of he samples adversely. But some slight improvements (in visible wavelengths) were observed. SEM studies indicated that the microstructure of the films was not noticeably changed by the hydrogenation process. (author)

  3. An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

    NARCIS (Netherlands)

    Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

    2010-01-01

    Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

  4. Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

    Science.gov (United States)

    Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

    2015-04-21

    Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

  5. Realization of ultrathin silver layers in highly conductive and transparent zinc tin oxide/silver/zinc tin oxide multilayer electrodes deposited at room temperature for transparent organic devices

    Energy Technology Data Exchange (ETDEWEB)

    Winkler, Thomas; Schmidt, Hans; Fluegge, Harald; Nikolayzik, Fabian; Baumann, Ihno; Schmale, Stephan; Johannes, Hans-Hermann; Rabe, Torsten [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany); Hamwi, Sami, E-mail: sami.hamwi@ihf.tu-bs.de [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany); Riedl, Thomas [Institute of Electronic Devices, Bergische Universitaet Wuppertal, Rainer-Gruenter Str. 21, 42119 Wuppertal (Germany); Kowalsky, Wolfgang [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany)

    2012-05-01

    We report on transparent and highly conductive multilayer electrodes prepared at room temperature by RF sputtering of zinc tin oxide (ZTO) and thermal evaporation of ultrathin silver (Ag) as top contact for transparent organic light emitting diodes (TOLED). Specifically, we study the morphological, electrical and optical properties of the multilayer structure in particular of the thin Ag film. The tendency of Ag to form agglomerates over time on top of ZTO is shown by atomic force microscopy. From the optical constants derived from ellipsometric measurements we evidenced a bulk like behavior of an Ag film with a thickness of 8 nm embedded in ZTO leading to a low sheet resistance of 9 {Omega}/sq. Furthermore we verify the optical constants by simulation of an optimized ZTO/Ag/ZTO structure. As an application we present a highly efficient TOLED providing a device transmittance of > 82% in the visible part of the spectrum. The TOLED shows no damage caused by sputtering on a lighting area of 80 mm{sup 2} and exhibits efficiencies of 43 cd/A and 36 lm/W.

  6. Spray-Deposited Large-Area Copper Nanowire Transparent Conductive Electrodes and Their Uses for Touch Screen Applications.

    Science.gov (United States)

    Chu, Hsun-Chen; Chang, Yen-Chen; Lin, Yow; Chang, Shu-Hao; Chang, Wei-Chung; Li, Guo-An; Tuan, Hsing-Yu

    2016-05-25

    Large-area conducting transparent conducting electrodes (TCEs) were prepared by a fast, scalable, and low-cost spray deposition of copper nanowire (CuNW) dispersions. Thin, long, and pure copper nanowires were obtained via the seed-mediated growth in an organic solvent-based synthesis. The mean length and diameter of nanowires are, respectively, 37.7 μm and 46 nm, corresponding to a high-mean-aspect ratio of 790. These wires were spray-deposited onto a glass substrate to form a nanowire conducting network which function as a TCE. CuNW TCEs exhibit high-transparency and high-conductivity since their relatively long lengths are advantageous in lowering in the sheet resistance. For example, a 2 × 2 cm(2) transparent nanowire electrode exhibits transmittance of T = 90% with a sheet resistance as low as 52.7 Ω sq(-1). Large-area sizes (>50 cm(2)) of CuNW TCEs were also prepared by the spray coating method and assembled as resistive touch screens that can be integrated with a variety of devices, including LED lighting array, a computer, electric motors, and audio electronic devices, showing the capability to make diverse sizes and functionalities of CuNW TCEs by the reported method.

  7. Rapid thermal processing of nano-crystalline indium tin oxide transparent conductive oxide coatings on glass by flame impingement technology

    International Nuclear Information System (INIS)

    Schoemaker, S.; Willert-Porada, M.

    2009-01-01

    Indium tin oxide (ITO) is still the best suited material for transparent conductive oxides, when high transmission in the visible range, high infrared reflection or high electrical conductivity is needed. Current approaches on powder-based printable ITO coatings aim at minimum consumption of active coating and low processing costs. The paper describes how fast firing by flame impingement is used for effective sintering of ITO-coatings applied on glass. The present study correlates process parameters of fast firing by flame impingement with optoelectronic properties and changes in the microstructure of suspension derived nano-particulate films. With optimum process parameters the heat treated coatings had a sheet resistance below 0.5 kΩ/ □ combined with a transparency higher than 80%. To characterize the influence of the burner type on the process parameters and the coating functionality, two types of methane/oxygen burner were compared: a diffusion burner and a premixed burner

  8. Facile Preparation of Carbon-Nanotube-based 3-Dimensional Transparent Conducting Networks for Flexible Noncontact Sensing Device

    KAUST Repository

    Tai, Yanlong

    2016-04-12

    Here, we report the controllable fabrication of transparent conductive films (TCFs) for moisture-sensing applications based on heating-rate-triggered, 3-dimensional porous conducting networks of single-walled carbon nanotube (SWCNT)/poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS). How baking conditions influence the self-assembled microstructure of the TCFs is discussed. The sensor presents high-performance properties, including a reasonable sheet resistance (2.1 kohm/sq), a high visible-range transmittance (> 69 %, PET = 90 %), and good stability when subjected to cyclic loading (> 1000 cycles, better than indium tin oxide film) during processing. Moreover, the benefits of these kinds of TCFs were verified through a fully transparent, highly sensitive, rapid response, noncontact moisture-sensing device (5×5 sensing pixels).

  9. Transparent Conducting Film Fabricated by Metal Mesh Method with Ag and Cu@Ag Mixture Nanoparticle Pastes

    Directory of Open Access Journals (Sweden)

    Hyun Min Nam

    2017-05-01

    Full Text Available Transparent conducting electrode film is highly desirable for application in touch screen panels (TSPs, flexible and wearable displays, sensors, and actuators. A sputtered film of indium tin oxide (ITO shows high transmittance (90% at low sheet resistance (50 Ω/cm2. However, ITO films lack mechanical flexibility, especially under bending stress, and have limitation in application to large-area TSPs (over 15 inches due to the trade-off in high transmittance and low sheet resistance properties. One promising solution is to use metal mesh-type transparent conducting film, especially for touch panel application. In this work, we investigated such inter-related issues as UV imprinting process to make a trench layer pattern, the synthesis of core-shell-type Ag and Cu@Ag composite nanoparticles and their paste formulation, the filling of Ag and Cu@Ag mixture nanoparticle paste to the trench layer, and touch panel fabrication processes.

  10. Properties of transparent and conductive Al:ZnO/Au/Al:ZnO multilayers on flexible PET substrates

    International Nuclear Information System (INIS)

    Dimopoulos, T.; Bauch, M.; Wibowo, R.A.; Bansal, N.; Hamid, R.; Auer, M.; Jäger, M.; List-Kratochvil, E.J.W.

    2015-01-01

    Highlights: • Transparent, low resistive AZO/Au/AZO layers were sputtered on PET substrates. • AZO/Au/AZO has higher figure of merit than ITO for specific Au thicknesses. • The resistance of AZO/Au/AZO is stable against repetitive substrate bending. • AZO/Au/AZO electrode performance is comparable to ITO in light emitting diodes. - Abstract: We investigate the structural, electrical and optical properties of transparent electrodes, consisting of Al-doped ZnO (AZO) and ultrathin Au layers, sputtered on polyethylene terephthalate (PET). These electrodes are relevant for optoelectronic devices and thin film photovoltaics. When deposited on AZO, Au films as thin as 3 nm form electrically conductive, meandering structures, whereas uniform Au films are obtained from a thickness of 5 nm. The sheet resistance decreases with Au thickness, reaching 7 Ω for 11 nm-thick Au. AZO/Au/AZO trilayers combine lowest resistance with highest transparency, while their resistance stability against bending fatigue is superior to the Sn-doped In 2 O 3 (ITO) electrode. The figure of merit of AZO/Au/AZO is larger than of ITO for Au thickness equal to or larger than 9 nm. To demonstrate the applicability of the AZO/Au/AZO transparent electrode, simple organic light emitting diodes were fabricated and tested in comparison to PET/ITO standard substrates

  11. Properties of transparent and conductive Al:ZnO/Au/Al:ZnO multilayers on flexible PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dimopoulos, T., E-mail: theodoros.dimopoulos@ait.ac.at [AIT-Austrian Institute of Technology, Energy Department, Photovoltaic Systems, Giefinggasse 2, 1210, Vienna (Austria); Bauch, M.; Wibowo, R.A.; Bansal, N. [AIT-Austrian Institute of Technology, Energy Department, Photovoltaic Systems, Giefinggasse 2, 1210, Vienna (Austria); Hamid, R. [AIT-Austrian Institute of Technology, Mobility Department, Electric Drive Technologies, Giefinggasse 2, 1210, Vienna (Austria); Auer, M.; Jäger, M. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); List-Kratochvil, E.J.W. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz (Austria)

    2015-10-15

    Highlights: • Transparent, low resistive AZO/Au/AZO layers were sputtered on PET substrates. • AZO/Au/AZO has higher figure of merit than ITO for specific Au thicknesses. • The resistance of AZO/Au/AZO is stable against repetitive substrate bending. • AZO/Au/AZO electrode performance is comparable to ITO in light emitting diodes. - Abstract: We investigate the structural, electrical and optical properties of transparent electrodes, consisting of Al-doped ZnO (AZO) and ultrathin Au layers, sputtered on polyethylene terephthalate (PET). These electrodes are relevant for optoelectronic devices and thin film photovoltaics. When deposited on AZO, Au films as thin as 3 nm form electrically conductive, meandering structures, whereas uniform Au films are obtained from a thickness of 5 nm. The sheet resistance decreases with Au thickness, reaching 7 Ω for 11 nm-thick Au. AZO/Au/AZO trilayers combine lowest resistance with highest transparency, while their resistance stability against bending fatigue is superior to the Sn-doped In{sub 2}O{sub 3} (ITO) electrode. The figure of merit of AZO/Au/AZO is larger than of ITO for Au thickness equal to or larger than 9 nm. To demonstrate the applicability of the AZO/Au/AZO transparent electrode, simple organic light emitting diodes were fabricated and tested in comparison to PET/ITO standard substrates.

  12. Al-doped ZnO/Ag grid hybrid transparent conductive electrodes fabricated using a low-temperature process

    Energy Technology Data Exchange (ETDEWEB)

    An, Ha-Rim; Oh, Sung-Tag [Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Kim, Chang Yeoul [Future Convergence Ceramic Division, Korea Institute Ceramic Engineering and Technology (KICET), Seoul 233-5 (Korea, Republic of); Baek, Seong-Ho [Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Park, Il-Kyu, E-mail: ikpark@ynu.ac.kr [Department of Electronic Engineering, Yeungnam University, Gyeongbuk 712-749 (Korea, Republic of); Ahn, Hyo-Jin, E-mail: hjahn@seoultech.ac.kr [Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of)

    2014-12-05

    Highlights: • Al-doped ZnO/Ag transparent conductive electrode is fabricated at low temperature. • Performance of the hybrid transparent conductive electrode affected by the structure. • The performance enhancement mechanism is suggested. - Abstract: Al-doped ZnO (AZO)/Ag grid hybrid transparent conductive electrode (TCE) structures were fabricated at a low temperature by using electrohydrodynamic jet printing for the Ag grids and atomic layer deposition for the AZO layers. The structural investigations showed that the AZO/Ag grid hybrid structures consisted of Ag grid lines formed by Ag particles and the AZO layer covering the inter-spacing between the Ag grid lines. The Ag particles comprising the Ag grid lines were also capped by thin AZO layers, and the coverage of the AZO layers was increased with increasing the thickness of the AZO layer. Using the optimum thickness of AZO layer of 70 nm, the hybrid TCE structure showed an electrical resistivity of 5.45 × 10{sup −5} Ω cm, an optical transmittance of 80.80%, and a figure of merit value of 1.41 × 10{sup −2} Ω{sup −1}. The performance enhancement was suggested based on the microstructural investigations on the AZO/Ag grid hybrid structures.

  13. Oxygen effect of transparent conducting amorphous Indium Zinc Tin Oxide films on Polyimide substrate for flexible electrode

    International Nuclear Information System (INIS)

    Ko, Yoon Duk; Lee, Chang Hun; Moon, Doo Kyung; Kim, Young Sung

    2013-01-01

    This paper discusses the effect of oxygen on the transparent conducting properties and mechanical durability of the amorphous indium zinc tin oxide (IZTO) films. IZTO films deposited on flexible clear polyimide (PI) substrate using pulsed direct current (DC) magnetron sputtering at room temperature under various oxygen partial pressures. All IZTO films deposited at room temperature exhibit an amorphous structure. The electrical and optical properties of the IZTO films were sensitively influenced by oxygen partial pressures. At optimized deposition condition of 3.0% oxygen partial pressure, the IZTO film shows the lowest resistivity of 6.4 × 10 −4 Ωcm, high transmittance of over 80% in the visible range, and figure of merit value of 3.6 × 10 −3 Ω −1 without any heat controls. In addition, high work function and good mechanical flexibility of amorphous IZTO films are beneficial to flexible applications. It is proven that the proper oxygen partial pressure is important parameter to enhance the transparent conducting properties of IZTO films on PI substrate deposited at room temperature. - Highlights: • Indium zinc tin oxide (IZTO) films were deposited on polyimide at room temperature. • Transparent conducting properties of IZTO were influenced with oxygen partial pressure. • The smooth surface and high work function of IZTO were beneficial to anode layer. • The mechanical reliability of IZTO shows better performance to indium tin oxide film

  14. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Gary S.; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu, Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve; Hartmann, Sören; Jessen, Frank; Krogmann, Bianaca; Rickers, Christoph; Ruske, Manfred; Schwab, Holger; Bertram, Dietrich

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  15. Preparation of Graphene Sheets by Electrochemical Exfoliation of Graphite in Confined Space and Their Application in Transparent Conductive Films.

    Science.gov (United States)

    Wang, Hui; Wei, Can; Zhu, Kaiyi; Zhang, Yu; Gong, Chunhong; Guo, Jianhui; Zhang, Jiwei; Yu, Laigui; Zhang, Jingwei

    2017-10-04

    A novel electrochemical exfoliation mode was established to prepare graphene sheets efficiently with potential applications in transparent conductive films. The graphite electrode was coated with paraffin to keep the electrochemical exfoliation in confined space in the presence of concentrated sodium hydroxide as the electrolyte, yielding ∼100% low-defect (the D band to G band intensity ratio, I D /I G = 0.26) graphene sheets. Furthermore, ozone was first detected with ozone test strips, and the effect of ozone on the exfoliation of graphite foil and the microstructure of the as-prepared graphene sheets was investigated. Findings indicate that upon applying a low voltage (3 V) on the graphite foil partially coated with paraffin wax that the coating can prevent the insufficiently intercalated graphite sheets from prematurely peeling off from the graphite electrode thereby affording few-layer (graphene sheets in a yield of as much as 60%. Besides, the ozone generated during the electrochemical exfoliation process plays a crucial role in the exfoliation of graphite, and the amount of defect in the as-prepared graphene sheets is dependent on electrolytic potential and electrode distance. Moreover, the graphene-based transparent conductive films prepared by simple modified vacuum filtration exhibit an excellent transparency and a low sheet resistance after being treated with NH 4 NO 3 and annealing (∼1.21 kΩ/□ at ∼72.4% transmittance).

  16. Transparent conducting polymer electrolyte by addition of lithium to the molecular complex chitosane-poly(aminopropyl siloxane)

    Energy Technology Data Exchange (ETDEWEB)

    Fuentes, S.; Retuert, P.J.; Gonzalez, Guillermo

    2003-06-30

    Transparent lithium-ion conducting films were prepared by adding lithium perchlorate to a mixture of chitosane (CHI) and poly(aminopropylsiloxane) (pAPS) in a molar ratio 0.6:1 by sol-gel methods. The morphological and molecular properties, determined by scanning electron microscopy and FT-IR, respectively, depend on the lithium salt concentration. The same techniques were also used for performing a 'titration' of the capacity of the film for incorporating lithium salt. Results show that about 0.8 mol lithium salt per mol chitosane can be added before the product losses the transparence and molecular compatibility characteristic of the pristine CHI/pAPS polymer complex. When lithium salt addition reaches the tolerance limit, anisotropically oriented patterns are observed in the hybrid films. Both transparence and ionic conductivity of the product appear to be related to the layered nature of formed nanocomposites. The properties of obtained films may be furthermore rationalized considering the chemical functionality and the Lewis donor-acceptor affinity of the components.

  17. Flexible transparent conducting films with embedded silver networks composed of bimodal-sized nanoparticles for heater application

    Science.gov (United States)

    Park, Ji Sun; Song, Yookyung; Park, Daseul; Kim, Yeon-Won; Kim, Yoon Jin

    2018-06-01

    A facile one-pot synthetic method for preparing the Ag nanoparticle inks with a bimodal size distribution was newly devised and they were successfully employed as a conducting filler to form the metal-mesh type transparent conducting electrodes on the flexible substrate. Bimodal-sized Ag nanoparticles were synthesized through the polyol process, and their size variation was occurred via finely tuned composition ratio between Ag+ ions and polymeric capping agents. The prepared bimodal-sized Ag nanoparticles exhibited the form of well-dispersed Ag nanoparticle inks without adding any dispersants and dispersion process. By filling the patterned micro-channels engraved on the flexible polymer substrate using a bimodal-sized Ag nanoparticle ink, a metal-mesh type transparent electrode (transmittance: 90% at 550 nm, haze: 1.5, area: 8 × 8 cm2) was fabricated. By applying DC voltage to the mesh type electrode, a flexible transparent joule heater was successfully achieved with a performance of 4.5 °C s‑1 heat-up rate at a low input power density.

  18. Amorphous and crystalline In{sub 2}O{sub 3}-based transparent conducting films for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan)

    2017-02-15

    We reported solar cells with reduced electrical and optical losses using hydrogen-doped In{sub 2}O{sub 3} (In{sub 2}O{sub 3}:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In{sub 2}O{sub 3}:H films grown by magnetron sputtering. The polycrystalline (poly-) In{sub 2}O{sub 3}:H films exhibited electron mobilities (over 100 cm{sup 2}V{sup -1} s{sup -1}) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In{sub 2}O{sub 3}-based TCO; (ii) the structural and optoelectrical properties of the a-In{sub 2}O{sub 3}:H and poly-In{sub 2}O{sub 3}:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Transparent Conducting Nb-Doped TiO2 Electrodes Activated by Laser Annealing for Inexpensive Flexible Organic Solar Cells

    Science.gov (United States)

    Lee, Jung-Hsiang; Lin, Chia-Chi; Lin, Yi-Chang

    2012-01-01

    A KrF excimer laser (λ= 248 nm) has been adopted for annealing cost-effective Nb-doped TiO2 (NTO) films. Sputtered NTO layers were annealed on SiO2-coated flexible poly(ethylene terephthalate) (PET) substrates. This local laser annealing technique is very useful for the formation of anatase NTO electrodes used in flexible organic solar cells (OSCs). An amorphous NTO film with a high resistivity and a low transparency was transformed significantly into a conductive and transparent anatase NTO electrode by laser irradiation. The 210 nm anatase NTO film shows a sheet resistance of 50 Ω and an average optical transmittance of 83.5% in the wavelength range from 450 to 600 nm after annealing at 0.25 J/cm2. The activation of Nb dopants and the formation of the anatase phase contribute to the high conductivity of the laser-annealed NTO electrode. Nb activation causes an increase in the optical band gap due to the Burstein-Moss effect. The electrical properties are in agreement with the material characteristics determined by X-ray diffraction (XRD) analysis and secondary ion mass spectrometry (SIMS). The irradiation energy for the NTO electrode also affects the performance of the organic solar cell. The laser annealing technique provides good properties of the anatase NTO film used as a transparent electrode for flexible organic solar cells (OSCs) without damage to the PET substrate or layer delamination from the substrate.

  20. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  1. Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

    International Nuclear Information System (INIS)

    Kasai, J.; Nakao, S.; Yamada, N.; Hitosugi, T.; Moriyama, M.; Goshonoo, K.; Hoang, N. L. H.; Hasegawa, T.

    2010-01-01

    Anatase Nb-doped TiO 2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 deg. C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8x10 -4 Ω cm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO 2 was well matched to that of GaN. These findings indicate that Nb-doped TiO 2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

  2. Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

    Science.gov (United States)

    Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

    2018-04-01

    Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

  3. Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

    International Nuclear Information System (INIS)

    Koida, Takashi; Sai, Hitoshi; Kondo, Michio

    2010-01-01

    Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

  4. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  5. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  6. ITO with embedded silver grids as transparent conductive electrodes for large area organic solar cells

    DEFF Research Database (Denmark)

    Patil, Bhushan Ramesh; Mirsafaei, Mina; Cielecki, Pawel Piotr

    2017-01-01

    In this work, development of semi-transparent electrodes for efficient large area organic solar cells (OSCs) has been demonstrated. Electron beam evaporated silver grids were embedded in commercially available ITO coatings on glass, through a standard negative photolithography process, in order...... patterns. Solution processed bulk heterojunction OSCs based on PTB7:[70]PCBM were fabricated on top of these electrodes with cell areas of 4.38 cm2, and the performance of these OSCs was compared to reference cells fabricated on pure ITO electrodes. The Fill Factor of the large-scale OSCs fabricated on ITO...... with embedded Ag grids was enhanced by 18 % for the line grids pattern and 30 % for the square grids pattern compared to that of the reference OSCs. The increase in the Fill Factor was directly correlated to the decrease in the series resistance of the OSCs. The maximum power conversion efficiency (PCE...

  7. Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

  8. ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

    OpenAIRE

    Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

    2017-01-01

    In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980??C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05?m2/g and 103.8?nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were gro...

  9. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung

    2012-05-22

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive layer of poly (3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester, a power conversion efficiency of 3.67% was obtained, a value comparable to devices having sputtered ITO electrode. Surface roughness and optical efficiency are improved when using the mixed TiO2−x–ITO electrode. The consumption of less indium allows for lower fabrication cost of such mixed thin filmelectrode.

  10. Effect of cross-linkable polymer on the morphology and properties of transparent multi-walled carbon nanotube conductive films

    International Nuclear Information System (INIS)

    Huang, Yuan-Li; Tien, Hsi-Wen; Ma, Chen-Chi M.; Teng, Chih-Chun; Yu, Yi-Hsiuan; Yang, Shin-Yi; Wei, Ming-Hsiung; Wu, Sheng-Yen

    2011-01-01

    In this study, we fabricated optically transparent and electrically conductive multi-walled carbon nanotube (MWCNT) thin films using a spray-coating technique. The transparency and the electrical resistance of thin film are dependent on the nanotube content deposited on the polyethylene terephthalate (PET) substrate. Poly(acrylic acid) (PAA) and poly(N-vinyl pyrrolidone) (PVP) were used as adhesion promoters to improve MWCNT coating more significantly. The cross-linked polymer resulted in a superior bond between the MWCNTs and the substrates. The surface electrical resistance was significantly lower than the original sheet after nitric acid (HNO 3 ) treatment because of the removed surfactant and the increased interconnecting networks of MWCNT bundles, thus improving the electrical and optical properties of the films. Stronger interaction between the MWCNTs and the substrates resulted in lower decomposition of the polymer chain and less amounts of MWCNTs separated into the HNO 3 solution. The lower sheet electrical resistance of PVP/PAA-g-MWCNT conductive films on the PET substrate was because of a more complete conductive path with the cross-linked polymer than that without. Such an improved sheet of electrical resistance varied from 8.83 x 10 4 Ω/□ to 2.65 x 10 3 Ω/□ with 5.0 wt.% PVP/PAA-g-MWCNT sprayed on the PET after acid treatment.

  11. Effect of cross-linkable polymer on the morphology and properties of transparent multi-walled carbon nanotube conductive films

    Science.gov (United States)

    Huang, Yuan-Li; Tien, Hsi-Wen; Ma, Chen-Chi M.; Teng, Chih-Chun; Yu, Yi-Hsiuan; Yang, Shin-Yi; Wei, Ming-Hsiung; Wu, Sheng-Yen

    2011-10-01

    In this study, we fabricated optically transparent and electrically conductive multi-walled carbon nanotube (MWCNT) thin films using a spray-coating technique. The transparency and the electrical resistance of thin film are dependent on the nanotube content deposited on the polyethylene terephthalate (PET) substrate. Poly(acrylic acid) (PAA) and poly(N-vinyl pyrrolidone) (PVP) were used as adhesion promoters to improve MWCNT coating more significantly. The cross-linked polymer resulted in a superior bond between the MWCNTs and the substrates. The surface electrical resistance was significantly lower than the original sheet after nitric acid (HNO 3) treatment because of the removed surfactant and the increased interconnecting networks of MWCNT bundles, thus improving the electrical and optical properties of the films. Stronger interaction between the MWCNTs and the substrates resulted in lower decomposition of the polymer chain and less amounts of MWCNTs separated into the HNO 3 solution. The lower sheet electrical resistance of PVP/PAA-g-MWCNT conductive films on the PET substrate was because of a more complete conductive path with the cross-linked polymer than that without. Such an improved sheet of electrical resistance varied from 8.83 × 10 4 Ω/□ to 2.65 × 10 3 Ω/□ with 5.0 wt.% PVP/PAA-g-MWCNT sprayed on the PET after acid treatment.

  12. Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

    Science.gov (United States)

    Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

    2018-05-01

    The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

  13. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu; Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2017-01-01

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize

  14. Smooth-surface silver nanowire electrode with high conductivity and transparency on functional layer coated flexible film

    International Nuclear Information System (INIS)

    Lee, So Hee; Lim, Sooman; Kim, Haekyoung

    2015-01-01

    Transparent conductive electrode (TCE) with silver nanowires has been widely studied as an alternative of indium tin oxide for flexible electronic or optical devices such as organic light-emitting diodes, and solar cells. However, it has an issue of surface roughness due to nanowire's intrinsic properties. Here, to achieve a smooth electrode with high conductivity and transmittance on polyethylene terephthalate (PET) substrates, a functional layer of poly(N-vinylpyrrolidone) (PVP) is utilized with a mechanical transfer process. The silver nanowire electrode on PVP-coated PET with low surface roughness of 9 nm exhibits the low sheet resistance of 18 Ω □ −1 and high transmittance of 87.6%. It is produced by transferring the silver nanowire electrode spin-coated on the glass to PVP-coated PET using a pressure of 10 MPa for 10 min. Silver nanowire electrode on PVP-coated PET demonstrates the stable sheet resistance of 18 Ω □ −1 after the mechanical taping test due to strong adhesion between PVP functional layer and silver nanowires. Smooth TCE with silver nanowires could be proposed as a transparent electrode for flexible electronic or optical devices, which consist of thin electrical active layers on TCE. - Highlights: • Silver nanowire (Ag NWs) transparent electrodes were fabricated on flexible film. • Flexible film was coated with poly N-vinylpyrrolidone (PVP). • PVP layer plays roles as an adhesive layer and matrix in electrode. • Ag NWs electrode exhibited with low surface roughness of 9 nm. • Ag NWs electrode has a low resistance (18 Ω ☐ −1 ) and high transmittance (87.6%)

  15. Smooth-surface silver nanowire electrode with high conductivity and transparency on functional layer coated flexible film

    Energy Technology Data Exchange (ETDEWEB)

    Lee, So Hee; Lim, Sooman; Kim, Haekyoung, E-mail: hkkim@ynu.ac.kr

    2015-08-31

    Transparent conductive electrode (TCE) with silver nanowires has been widely studied as an alternative of indium tin oxide for flexible electronic or optical devices such as organic light-emitting diodes, and solar cells. However, it has an issue of surface roughness due to nanowire's intrinsic properties. Here, to achieve a smooth electrode with high conductivity and transmittance on polyethylene terephthalate (PET) substrates, a functional layer of poly(N-vinylpyrrolidone) (PVP) is utilized with a mechanical transfer process. The silver nanowire electrode on PVP-coated PET with low surface roughness of 9 nm exhibits the low sheet resistance of 18 Ω □{sup −1} and high transmittance of 87.6%. It is produced by transferring the silver nanowire electrode spin-coated on the glass to PVP-coated PET using a pressure of 10 MPa for 10 min. Silver nanowire electrode on PVP-coated PET demonstrates the stable sheet resistance of 18 Ω □{sup −1} after the mechanical taping test due to strong adhesion between PVP functional layer and silver nanowires. Smooth TCE with silver nanowires could be proposed as a transparent electrode for flexible electronic or optical devices, which consist of thin electrical active layers on TCE. - Highlights: • Silver nanowire (Ag NWs) transparent electrodes were fabricated on flexible film. • Flexible film was coated with poly N-vinylpyrrolidone (PVP). • PVP layer plays roles as an adhesive layer and matrix in electrode. • Ag NWs electrode exhibited with low surface roughness of 9 nm. • Ag NWs electrode has a low resistance (18 Ω ☐{sup −1}) and high transmittance (87.6%)

  16. Transparent and Electrically Conductive Carbon Nanotube-Polymer Nanocomposite Materials for Electrostatic Charge Dissipation

    Science.gov (United States)

    Dervishi, E.; Biris, A. S.; Biris, A. R.; Lupu, D.; Trigwell, S.; Miller, D. W.; Schmitt, T.; Buzatu, D. A.; Wilkes, J. G.

    2006-01-01

    In recent years, nanocomposite materials have been extensively studied because of their superior electrical, magnetic, and optical properties and large number of possible applications that range from nano-electronics, specialty coatings, electromagnetic shielding, and drug delivery. The aim of the present work is to study the electrical and optical properties of carbon nanotube(CNT)-polymer nanocomposite materials for electrostatic charge dissipation. Single and multi-wall carbon nanotubes were grown by catalytic chemical vapor deposition (CCVD) on metal/metal oxide catalytic systems using acetylene or other hydrocarbon feedstocks. After the purification process, in which amorphous carbon and non-carbon impurities were removed, the nanotubes were functionalized with carboxylic acid groups in order to achieve a good dispersion in water and various other solvents. The carbon nanostructures were analyzed, both before and after functionalization by several analytical techniques, including microscopy, Raman spectroscopy, and X-Ray photoelectron spectroscopy. Solvent dispersed nanotubes were mixed (1 to 7 wt %) into acrylic polymers by sonication and allowed to dry into 25 micron thick films. The electrical and optical properties of the films were analyzed as a function of the nanotubes' concentration. A reduction in electrical resistivity, up to six orders of magnitude, was measured as the nanotubes' concentration in the polymeric films increased, while optical transparency remained 85 % or higher relative to acrylic films without nanotubes.

  17. COGEMA gives communication a new impetus: transparency to conduct a new dialog

    International Nuclear Information System (INIS)

    Graffin, K.

    2000-01-01

    COGEMA launched in November 1999 a mass public communication campaign and created an Internet site equipped with cameras (web-cams) to make everyone familiar with the COGEMA plant at La Hague. This system is designed to serve as a communication policy that is resolutely open and attentive to French public concerns. The campaign includes TV commercials and press ads. The underlying principle is to work on issues that have made the news. The televised system includes two films shot at La Hague. The first, lasting 90 seconds, consists of interviews and testimonies of employees who represent the professional and human diversity of the plant. The second, in 45-second format, presents the questions to which public opinion wants answers. To ensure that everyone obtains all the answers to their questions, the TV spots and press ads refer to the web-site: www.cogemalahague.fr. Cybemauts can witness live, by means of a dozen web-cams, what actually happens in different places at COGEMA La Hague: general view of the site, spent fuel unloading installations, storage ponds, Valognes rail terminal, etc. The gist of this first step in the new dialog that COGEMA wants to establish with public opinion is to get beyond irrational fears through transparency, and to show that COGEMA's men and women are fully responsible and determined to contribute actively to the information of the public at large. (authors)

  18. A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Du, Juan; Bittner, Florian [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Hecht, David S.; Ladous, Corinne [Unidym, 1244 Reamwood Avenue, Sunnyvale, CA (United States); Ellinger, Jan [Tesa SE, Quickbornstr. 24, 20253 Hamburg (Germany); Oekermann, Torsten, E-mail: torstensan@t-online.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Wark, Michael, E-mail: michael.wark@techem.ruhr-uni-bochum.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Laboratory of Industrial Chemistry, Ruhr University Bochum, Universitaetsstr. 150, 44801 Bochum (Germany)

    2013-03-01

    A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy.

  19. Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

  20. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Ahmad Hadi, E-mail: ahadi@uthm.edu.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang (Malaysia); Science Department, Faculty of Science, Technology and Human Development, Universiti Tun Hussein Onn Malaysia, Johor (Malaysia); Shuhaimi, Ahmad [Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur (Malaysia); Hassan, Zainuriah [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang (Malaysia)

    2014-01-01

    We report on the transparent conductive oxides (TCO) characteristics based on the indium tin oxides (ITO) and ITO/metal thin layer as an electrode for optoelectronics device applications. ITO, ITO/Ag and ITO/Ni were deposited on Si and glass substrate by thermal evaporator and radio frequency (RF) magnetron sputtering at room temperature. Post deposition annealing was performed on the samples in air at moderate temperature of 500 °C and 600 °C. The structural, optical and electrical properties of the ITO and ITO/metal were characterized using X-ray diffraction (XRD), UV–Vis spectrophotometer, Hall effect measurement system and atomic force microscope (AFM). The XRD spectrum reveals significant polycrystalline peaks of ITO (2 2 2) and Ag (1 1 1) after post annealing process. The post annealing also improves the visible light transmittance and electrical resistivity of the samples. Figure of merit (FOM) of the ITO, ITO/Ag and ITO/Ni were determined as 5.5 × 10{sup −3} Ω{sup −1}, 8.4 × 10{sup −3} Ω{sup −1} and 3.0 × 10{sup −5} Ω{sup −1}, respectively. The results show that the post annealed ITO with Ag intermediate layer improved the efficiency of the transparent conductive electrodes (TCE) as compared to the ITO and ITO/Ni.

  1. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

    International Nuclear Information System (INIS)

    Ali, Ahmad Hadi; Shuhaimi, Ahmad; Hassan, Zainuriah

    2014-01-01

    We report on the transparent conductive oxides (TCO) characteristics based on the indium tin oxides (ITO) and ITO/metal thin layer as an electrode for optoelectronics device applications. ITO, ITO/Ag and ITO/Ni were deposited on Si and glass substrate by thermal evaporator and radio frequency (RF) magnetron sputtering at room temperature. Post deposition annealing was performed on the samples in air at moderate temperature of 500 °C and 600 °C. The structural, optical and electrical properties of the ITO and ITO/metal were characterized using X-ray diffraction (XRD), UV–Vis spectrophotometer, Hall effect measurement system and atomic force microscope (AFM). The XRD spectrum reveals significant polycrystalline peaks of ITO (2 2 2) and Ag (1 1 1) after post annealing process. The post annealing also improves the visible light transmittance and electrical resistivity of the samples. Figure of merit (FOM) of the ITO, ITO/Ag and ITO/Ni were determined as 5.5 × 10 −3 Ω −1 , 8.4 × 10 −3 Ω −1 and 3.0 × 10 −5 Ω −1 , respectively. The results show that the post annealed ITO with Ag intermediate layer improved the efficiency of the transparent conductive electrodes (TCE) as compared to the ITO and ITO/Ni.

  2. Highly thermal conductivity and infrared emissivity of flexible transparent film heaters utilizing silver-decorated carbon nanomaterials as fillers

    International Nuclear Information System (INIS)

    Li, Yu-An; Chen, Yin-Ju; Tai, Nyan-Hwa

    2014-01-01

    A flexible transparent film heater using functionalized few-walled carbon nanotubes and graphene nanosheets decorated with silver nanoparticles as fillers and poly(3,4-ethylenedioxythiophene)- poly(4-stryrenesulfonate) (PEDOT:PSS) as a dispersant possesses excellent optoelectronic and electrothermal properties. The film possesses a low sheet resistance of 53.0 ± 4.2 ohm · sq −1 , a transmittance of 80.2 ± 0.8% at a wavelength of 550 nm, a high thermal conductivity of 142.0 ± 9.6 W · m −1  · K −1 , a quick response time of less than 60 s, stable heating performance, good reliability, low power consumption, flexibility, and uniform heat diffusion. Besides, the film shows an average infrared emissivity of 0.53 in the wavelength range of 4 to 14 μm, which shows an outstanding heat release performance by radiation. The flexible transparent film heaters adopting graphene and carbon nanotubes as fillers boast excellent electrothermal performance through heat conduction and infrared radiation, suggesting that they are good substitutes for traditional metallic and indium tin oxide film heaters. (papers)

  3. High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

    Science.gov (United States)

    Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

    2018-03-01

    Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

  4. Direct growth of transparent conducting Nb-doped anatase TiO2 polycrystalline films on glass

    International Nuclear Information System (INIS)

    Yamada, Naoomi; Kasai, Junpei; Hitosugi, Taro; Hoang, Ngoc Lam Huong; Nakao, Shoichiro; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

    2009-01-01

    This paper proposes a novel sputter-based method for the direct growth of transparent conducting Ti 1-x Nb x O 2 (TNO) polycrystalline films on glass, without the need for any postdeposition treatments, by the use of an initial seed-layer. Anatase TNO epitaxial films grown on LaAlO 3 (100) substrates under a reducing atmosphere exhibited a low resistivity (ρ) of (3-6)x10 -4 Ω cm. On glass, however, highly resistive rutile phase polycrystalline films (ρ∼100 Ω cm) formed preferentially under the same conditions. These results suggest that epitaxial stabilization of the oxygen-deficient anatase phase occurs on lattice-matched substrates. To produce a similar effect on a glass surface, we deposited a seed-layer of anatase TNO with excellent crystallinity under an increased oxygen atmosphere. As a result, anatase phase TNO polycrystalline films could be grown even under heavily reducing atmospheres. An optimized film exhibited ρ=1.1x10 -3 Ω cm and optical absorption lower than 10% in the visible region. This ρ value is more than one order of magnitude lower than values reported for directly deposited TNO polycrystalline films. This indicates that the seed-layer method has considerable potential for producing transparent conducting TNO polycrystalline films on glass.

  5. A phosphor-free white light-emitting diode using In2O3 : Tb transparent conductive light converter

    International Nuclear Information System (INIS)

    Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian

    2011-01-01

    Tb-doped indium oxide (In 2 O 3 : Tb) films were deposited on a GaN-based near-ultraviolet (NUV) light-emitting diode (LED) as a transparent conductive light converter to form a white LED. The transmittance of the In 2 O 3 : Tb film (Tb at 10 wt%) exceeded 80% in visible light and the resistivity was 0.325 Ω cm. The In 2 O 3 : Tb transparent conductive light converter was also employed on GaN-based LEDs. GaN-based NUV-LEDs with In 2 O 3 : Tb film (Tb at 10 wt%) produced forward biases of 3.42 V at an injection current of 20 mA. With increasing temperature, increasing Tb 3+ concentration and increasing injection current from 20 to 100 mA, the chromaticity coordinates barely changed in the white light area. Therefore, the GaN-based NUV-LED with In 2 O 3 : Tb film had a stable white light colour, when temperature and injection current changed, and is suitable for solid-state lighting.

  6. A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Du, Juan; Bittner, Florian; Hecht, David S.; Ladous, Corinne; Ellinger, Jan; Oekermann, Torsten; Wark, Michael

    2013-01-01

    A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy

  7. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    Science.gov (United States)

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  8. Facile Synthesis of Ultralong and Thin Copper Nanowires and Its Application to High-Performance Flexible Transparent Conductive Electrodes

    Science.gov (United States)

    Wang, Yaxiong; Liu, Ping; Zeng, Baoqing; Liu, Liming; Yang, Jianjun

    2018-03-01

    A hydrothermal method for synthesizing ultralong and thin copper nanowires (CuNWs) with average diameter of 35 nm and average length of 100 μm is demonstrated in this paper. The concerning raw materials include copric (II) chloride dihydrate (CuCl2·2H2O), octadecylamine (ODA), and ascorbic acid, which are all very cheap and nontoxic. The effect of different reaction time and different molar ratios to the reaction products were researched. The CuNWs prepared by the hydrothermal method were applied to fabricate CuNW transparent conductive electrode (TCE), which exhibited excellent conductivity-transmittance performance with low sheet resistance of 26.23 Ω /\\square and high transparency at 550 nm of 89.06% (excluding Polyethylene terephthalate (PET) substrate). The electrode fabrication process was carried out at room temperature, and there was no need for post-treatment. In order to decrease roughness and protect CuNW TCEs against being oxidized, we fabricated CuNW/poly(methyl methacrylate) (PMMA) hybrid TCEs (HTCEs) using PMMA solution. The CuNW/PMMA HTCEs exhibited low surface roughness and chemical stability as compared with CuNW TCEs.

  9. Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

    International Nuclear Information System (INIS)

    Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

    2010-01-01

    Full text : Semiconductor ZnO thin films with wide band gap attract much interest due to their properties such as chemical stability in hydrogen plasma, high optical transparency in the visible and nearinfrared region. Due to these properties ZnO oxide is a promising materials for electronic or optoelectronic applications such as solar cell (as an antireflecting coating and a transparent conducting material), gas sensors, surface acoustic wave devices. The purpose of this research is to improve the properties of n and p-type ZnO thin films for device applications. Polycrystalline ZnO is naturally n-type and very difficult to dope to make p-type. Therefore nowadays hardly produced p-type ZnO attracts a lot of attention. Nitrogen considered as the best dopant for p-type ZnO thin films.The transparent, conductive and very precise thickness controlled n and p-type semiconducting nanocrystalline ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. Structural, optical and electrical properties of these films were investigated. And also photoluminescence properties of these films were investigated. Transparent p-type ZnO thin films were produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride thin films were deposited with various thicknesses and under different oxygen pressures on glass substrates. Zinc nitride thin films, which were deposited at room temperatures, were amorphous and the optical transmission was below 70%. For oxidation zinc nitride, the sample was annealed in air starting from 350 degrees Celsium up to 550 degrees Celsium for one hour duration. These XRD patterns imply that zinc nitride thin films converted to zinc oxide thin films with the same hexagonal crystalline structures of ZnO. The optical measurements were made for each annealing temperature and the optical transmissions of ZnO thin films were found better than 90 percent in visible range after annealing over 350 degrees Celsium. By

  10. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    International Nuclear Information System (INIS)

    Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

    2014-01-01

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  11. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  12. Length-controlled few-walled carbon nanotubes and their effect on the electrical property of flexible transparent conductive films

    Science.gov (United States)

    Lee, Byeong-Joo; Shin, Eui-Chul; Jeong, Goo-Hwan

    2012-06-01

    We investigated the effect of the length of carbon nanotubes (CNTs) on the electrical property of CNT-based flexible, transparent, and conductive films (TCFs). We grew vertically aligned CNTs with controlled lengths, dispersed them in ethanol by ultrasonication, and spray coated them onto polyethylene terephthalate (PET) sheets. We focused on the variation in the sheet resistance and transmittance of the above-mentioned films as a function of the CNT length, and we found that the optimum CNT length was 200 μm. We concluded that the CNT length should be carefully optimized because a shorter tube affords the advantage of efficient dispersion, while a longer tube helps in reducing the number of contact points between tubes along the electrical conduction path.

  13. Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate

    International Nuclear Information System (INIS)

    Hitosugi, T.; Ueda, A.; Nakao, S.; Yamada, N.; Furubayashi, Y.; Hirose, Y.; Konuma, S.; Shimada, T.; Hasegawa, T.

    2008-01-01

    We report on transparent conducting properties of anatase Ti 0.94 Nb 0.06 O 2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 deg. C, with subsequent H 2 -annealing at 500 deg. C. Polycrystalline TNO films showed resistivity of 4.5 x 10 -4 Ω cm and 1.5 x 10 -3 Ω cm for films prepared at substrate temperature of room temperature and 250 deg. C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films

  14. Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

    International Nuclear Information System (INIS)

    Singh, Hemant Kr.; Avasthi, D.K.; Aggarwal, Shruti

    2015-01-01

    Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO 2 :F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In 2 O 3 :Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag +9 ions at fluences ranging from 3.0 × 10 11 ions/cm 2 to 3.0 × 10 13 ions/cm 2 . The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications

  15. Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Hemant Kr. [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India); Avasthi, D.K. [Inter University Accelerator Center, Post Box 10502, New Delhi (India); Aggarwal, Shruti, E-mail: shruti.al@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India)

    2015-06-15

    Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO{sub 2}:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In{sub 2}O{sub 3}:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag{sup +9} ions at fluences ranging from 3.0 × 10{sup 11} ions/cm{sup 2} to 3.0 × 10{sup 13} ions/cm{sup 2}. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

  16. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  17. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    International Nuclear Information System (INIS)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R.; Arrieta, M.L. Pérez; Meza-Rocha, A.N.; Rivera-Álvarez, Z.; Falcony, C.

    2013-01-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min −1 at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min −1 were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s

  18. Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system

    Energy Technology Data Exchange (ETDEWEB)

    Lux, Helge, E-mail: lux@th-wildau.de; Schrader, Sigurd [Technical University of Applied Sciences Wildau, Hochschulring 1, Wildau 15745 (Germany); Siemroth, Peter [Arc Precision GmbH, Schwartzkopffstraße 2, Wildau 15745 (Germany); Sgarlata, Anna [Department of Physics, University of Roma - Tor Vergata, Via della Ricerca Scientifica 1, Roma 00133 (Italy); Prosposito, Paolo; Casalboni, Mauro [Department of Industrial Engineering, University of Roma - Tor Vergata, and Italian Interuniversity Consortium on Materials Science and Technology (INSTM), Research Unit Roma Tor Vergata Via del Politecnico 1, Roma 00133 (Italy); Schubert, Markus Andreas [IHP Innovations for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder) 15236 (Germany)

    2015-05-21

    Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Φ-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 × 10{sup 3} Ω{sub ◻} whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm{sup 2}. Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications.

  19. High performance flexible metal oxide/silver nanowire based transparent conductive films by a scalable lamination-assisted solution method

    Directory of Open Access Journals (Sweden)

    Hua Yu

    2017-03-01

    Full Text Available Flexible MoO3/silver nanowire (AgNW/MoO3/TiO2/Epoxy electrodes with comparable performance to ITO were fabricated by a scalable solution-processed method with lamination assistance for transparent and conductive applications. Silver nanoparticle-based electrodes were also prepared for comparison. Using a simple spin-coating and lamination-assisted planarization method, a full solution-based approach allows preparation of AgNW-based composite electrodes at temperatures as low as 140 °C. The resulting flexible AgNW-based electrodes exhibit higher transmittance of 82% at 550 nm and lower sheet resistance about 12–15 Ω sq−1, in comparison with the values of 68% and 22–25 Ω sq−1 separately for AgNP based electrodes. Scanning electron microscopy (SEM and Atomic force microscopy (AFM reveals that the multi-stacked metal-oxide layers embedded with the AgNWs possess lower surface roughness (<15 nm. The AgNW/MoO3 composite network could enhance the charge transport and collection efficiency by broadening the lateral conduction range due to the built of an efficient charge transport network with long-sized nanowire. In consideration of the manufacturing cost, the lamination-assisted solution-processed method is cost-effective and scalable, which is desire for large-area fabrication. While in view of the materials cost and comparable performance, this AgNW-based transparent and conductive electrodes is potential as an alternative to ITO for various optoelectronic applications.

  20. Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

    KAUST Repository

    Kang, Chun Hong

    2016-08-23

    Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

  1. The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Xiu Xian-Wu; Zhao Wen-Jing

    2012-01-01

    Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency (RF) magnetron sputtering at ambient temperature. The MoO 3 content in the target varies from 0 to 5 wt%, and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis. The resistivity first decreases and then increases with the increase in MoO 3 content. The lowest resistivity achieved is 9.2×10 −4 Ω·cm, with a high Hall mobility of 30 cm 2 ·V −1 ·s 1 and a carrier concentration of 2.3×10 20 cm −3 at an MoO 3 content of 2 wt%. The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO 3 content in the target. (condensed matter: structural, mechanical, and thermal properties)

  2. Effect of the thickness and hydrogen treatment on the properties of Ga-doped ZnO transparent conductive films

    International Nuclear Information System (INIS)

    Lee, Min-Jung; Lim, Jinhyong; Bang, Jungsik; Lee, Woong; Myoung, Jae-Min

    2008-01-01

    Combined effects of the thickness and hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential substitute for indium tin oxide transparent conductive oxide. In the as-deposited films, microstructural evolution initially improved the crystallinity up to the thickness of 160 nm accompanying enhanced electrical and optical properties, but further thickness increase resulted in the deterioration of these properties attributable to the development of ZnGa 2 O 4 and Ga 2 O 3 phases originating from the excessive amount of the Ga dopant. Post-annealing treatment of the GZO films in a hydrogen atmosphere improved the electrical and optical properties substantially through possible reduction of the oxide phases and passivation of the surfaces and grain boundaries. In this case, electrical and optical properties remained almost similar for the thickness above 160 nm indicating that there exists a certain optimal film thickness.

  3. Study on the optical and electrical properties of tetracyanoethylene doped bilayer graphene stack for transparent conducting electrodes

    International Nuclear Information System (INIS)

    Limbu, Tej B.; Barrionuevo, Danilo; Katiyar, Ram S.; Morell, Gerardo; Mendoza, Frank; Carpena, Jennifer; Maruyama, Benji; Weiner, Brad R.

    2016-01-01

    We report the optical and electrical properties of chemically-doped bilayer graphene stack by tetracyanoethylene, a strong electron acceptor. The Tetracyanoethylene doping on the bilayer graphene via charge transfer was confirmed by Raman spectroscopy and Infrared Fourier transform spectroscopy. Doped graphene shows a significant increase in the sheet carrier concentration of up to 1.520 × 10"1"3 cm"−"2 with a concomitant reduction of the sheet resistance down to 414.1 Ω/sq. The high optical transmittance (ca. 84%) in the visible region in combination with the low sheet resistance of the Tetracyanoethylene-doped bilayer graphene stack opens up the possibility of making transparent conducting electrodes for practical applications.

  4. Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

    KAUST Repository

    Kang, Chun Hong; Shen, Chao; M. Saheed, M. Shuaib; Mohamed, Norani Muti; Ng, Tien Khee; Ooi, Boon S.; Burhanudin, Zainal Arif

    2016-01-01

    Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

  5. Transparent and flexible conducting hybrid film combined with 3-Aminopropyltriethoxysilane-coated polymer and graphene

    International Nuclear Information System (INIS)

    Jung, Daesung; Ko, Yong-Hun; Cho, Jumi; Adhikari, Prashanta Dhoj; Lee, Su Il; Kim, Yooseok; Song, Wooseok; Jung, Min Wook; Jang, Sung Won; Lee, Seung Youb; An, Ki-Seok; Park, Chong-Yun

    2015-01-01

    A simple approach to fabricate graphene hybrid film consisted of Graphene/3-aminopropyltriethoxysilane (APTES)/polyethylene terephthalate (PET) is presented, using self-assembled monolayers (SAMs) for enhancement of conductivity. The SAMs of APTES was prepared on ultraviolet-ozone (UVO)-irradiated PET films via wet chemical technique. The density of APTES was saturated after UV treatment time of 1 h for PET films; the carrier density and the optical transmittance were 9.3 × 10 12 /cm 2 and 82% for pristine graphene and 1.16 × 10 13 /cm 2 and 86% for graphene hybrid films, respectively, and experienced at inflection point at 30 min in UV treatment time. This behavior can be explained by surface morphology transition due to coalescence or clustering of mobile and low-molecular-weight oxidized components of PET.

  6. The use of arc-erosion as a patterning technique for transparent conductive materials

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Trillo, J. [Dpt. Ingenieria de Circuitos y Sistemas, EUIT Telecomunicacion, U. P. M, 28031 Madrid (Spain); Alvarez, A.L., E-mail: angelluis.alvarez@urjc.es [Dpt. Tecnologia Electronica, Univ. Rey Juan Carlos, Mostoles, 28933 Madrid (Spain); Coya, C. [Dpt. Tecnologia Electronica, Univ. Rey Juan Carlos, Mostoles, 28933 Madrid (Spain); Cespedes, E.; Espinosa, A. [Instituto de Ciencia de los Materiales (CSIC), Cantoblanco, 28049 Madrid (Spain)

    2011-12-01

    Within the framework of cost-effective patterning processes a novel technique that saves photolithographic processing steps, easily scalable to wide area production, is proposed. It consists of a tip-probe, which is biased with respect to a conductive substrate and slides on it, keeping contact with the material. The sliding tip leaves an insulating path (which currently is as narrow as 30 {mu}m) across the material, which enables the drawing of tracks and pads electrically insulated from the surroundings. This ablation method, called arc-erosion, requires an experimental set up that had to be customized for this purpose and is described. Upon instrumental monitoring, a brief proposal of the physics below this process is also presented. As a result an optimal control of the patterning process has been acquired. The system has been used on different substrates, including indium tin oxide either on glass or on polyethylene terephtalate, as well as alloys like Au/Cr, and Al. The influence of conditions such as tip speed and applied voltage is discussed. - Research highlights: Black-Right-Pointing-Pointer An experimental set up has been arranged to use arc erosion as a cost-effective patterning technique of conductive materials (ITO, and thin film metals). Black-Right-Pointing-Pointer Monitoring of the process has revealed that patterning is performed by a sequence of electrical discharges, assisted by the bypass capacitor at the source output. Black-Right-Pointing-Pointer This process has been controlled optimizing the patterning conditions and quality over different materials.

  7. Highly Elastic, Transparent, and Conductive 3D-Printed Ionic Composite Hydrogels

    KAUST Repository

    Odent, Jérémy

    2017-07-17

    Despite extensive progress to engineer hydrogels for a broad range of technologies, practical applications have remained elusive due to their (until recently) poor mechanical properties and lack of fabrication approaches, which constrain active structures to simple geometries. This study demonstrates a family of ionic composite hydrogels with excellent mechanical properties that can be rapidly 3D-printed at high resolution using commercial stereolithography technology. The new material design leverages the dynamic and reversible nature of ionic interactions present in the system with the reinforcement ability of nanoparticles. The composite hydrogels combine within a single platform tunable stiffness, toughness, extensibility, and resiliency behavior not reported previously in other engineered hydrogels. In addition to their excellent mechanical performance, the ionic composites exhibit fast gelling under near-UV exposure, remarkable conductivity, and fast osmotically driven actuation. The design of such ionic composites, which combine a range of tunable properties and can be readily 3D-printed into complex architectures, provides opportunities for a variety of practical applications such as artificial tissue, soft actuators, compliant conductors, and sensors for soft robotics.

  8. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    Science.gov (United States)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  9. Nanoscale current spreading analysis in solution-processed graphene oxide/silver nanowire transparent electrodes via conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shaw, Joseph E.; Perumal, Ajay; Bradley, Donal D. C.; Stavrinou, Paul N.; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ (United Kingdom)

    2016-05-21

    We use conductive atomic force microscopy (CAFM) to study the origin of long-range conductivity in model transparent conductive electrodes composed of networks of reduced graphene oxide (rGO{sub X}) and silver nanowires (AgNWs), with nanoscale spatial resolution. Pristine networks of rGO{sub X} (1–3 monolayers-thick) and AgNWs exhibit sheet resistances of ∼100–1000 kΩ/□ and 100–900 Ω/□, respectively. When the materials are deposited sequentially to form bilayer rGO{sub X}/AgNW electrodes and thermally annealed at 200 °C, the sheet resistance reduces by up to 36% as compared to pristine AgNW networks. CAFM was used to analyze the current spreading in both systems in order to identify the nanoscale phenomena responsible for this effect. For rGO{sub X} networks, the low intra-flake conductivity and the inter-flake contact resistance is found to dominate the macroscopic sheet resistance, while for AgNW networks the latter is determined by the density of the inter-AgNW junctions and their associated resistance. In the case of the bilayer rGO{sub X}/AgNWs' networks, rGO{sub X} flakes are found to form conductive “bridges” between AgNWs. We show that these additional nanoscopic electrical connections are responsible for the enhanced macroscopic conductivity of the bilayer rGO{sub X}/AgNW electrodes. Finally, the critical role of thermal annealing on the formation of these nanoscopic connections is discussed.

  10. Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Cheng, Gary J. [Birck Nanotechnology Center and School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Callahan, Michael; Bailey, John [Greentech Solutions, Inc., Hanson, Massachusetts 02341 (United States); Look, David [Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States); Efstathiadis, Harry [College of Nanoscale Science and Engineering (CNSE), University of Albany, Albany, New York 12203 (United States)

    2015-06-01

    Commercial production of transparent conducting oxide (TCO) polycrystalline films requires high electrical conductivity with minimal degradation in optical transparency. Aqueous solution deposited TCO films would reduce production costs of TCO films but suffer from low electrical mobility, which severely degrades both electrical conductivity and optical transparency in the visible spectrum. Here, we demonstrated that grain boundary modification by ultra-violet laser crystallization (UVLC) of solution deposited aluminium-doped zinc oxide (AZO) nanocrystals results in high Hall mobility, with a corresponding dramatic improvement in AZO electrical conductance. The AZO films after laser irradiation exhibit electrical mobility up to 18.1 cm{sup 2} V{sup −1} s{sup −1} with corresponding electrical resistivity and sheet resistances as low as 1 × 10{sup −3} Ω cm and 75 Ω/sq, respectively. The high mobility also enabled a high transmittance (T) of 88%-96% at 550 nm for the UVLC films. In addition, HAZE measurement shows AZO film scattering transmittance as low as 1.8%, which is superior over most other solution deposited transparent electrode alternatives such as silver nanowires. Thus, AZO films produced by the UVLC technique have a combined figure of merit for electrical conductivity, optical transparency, and optical HAZE higher than other solution based deposition techniques and comparable to vacuumed based deposition methods.

  11. Time-resolved electron thermal conduction by probing of plasma formation in transparent solids with high power subpicosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Vu, Brian -Tinh Van [Univ. of California, Davis, CA (United States)

    1994-02-01

    This dissertation work includes a series of experimental measurements in a search for better understanding of high temperature (104-106K) and high density plasmas (1022-1024cm-3) produced by irradiating a transparent solid target with high intensity (1013 - 1015W/cm2) and subpicosecond (10-12-10-13s) laser pulses. Experimentally, pump and probe schemes with both frontside (vacuum-plasma side) and backside (plasma-bulk material side) probes are used to excite and interrogate or probe the plasma evolution, thereby providing useful insights into the plasma formation mechanisms. A series of different experiments has been carried out so as to characterize plasma parameters and the importance of various nonlinear processes. Experimental evidence shows that electron thermal conduction is supersonic in a time scale of the first picosecond after laser irradiation, so fast that it was often left unresolved in the past. The experimental results from frontside probing demonstrate that upon irradiation with a strong (pump) laser pulse, a thin high temperature (~40eV) super-critical density (~1023/cm3) plasma layer is quickly formed at the target surface which in turn becomes strongly reflective and prevents further transmission of the remainder of the laser pulse. In the bulk region behind the surface, it is also found that a large sub-critical (~1018/cm3) plasma is produced by inverse Bremsstrahlung absorption and collisional ionization. The bulk underdense plasma is evidenced by large absorption of the backside probe light. A simple and analytical model, modified from the avalanche model, for plasma evolution in transparent materials is proposed to explain the experimental results. Elimination of the bulk plasma is then experimentally illustrated by using targets overcoated with highly absorptive films.

  12. Time-resolved electron thermal conduction by probing of plasma formation in transparent solids with high power subpicosecond laser pulses

    International Nuclear Information System (INIS)

    Vu, B.T.V.

    1994-02-01

    This dissertation work includes a series of experimental measurements in a search for better understanding of high temperature (10 4 -10 6 K) and high density plasmas (10 22 -10 24 cm -3 ) produced by irradiating a transparent solid target with high intensity (10 13 - 10 15 W/cm 2 ) and subpicosecond (10 -12 -10 -13 s) laser pulses. Experimentally, pump and probe schemes with both frontside (vacuum-plasma side) and backside (plasma-bulk material side) probes are used to excite and interrogate or probe the plasma evolution, thereby providing useful insights into the plasma formation mechanisms. A series of different experiments has been carried out so as to characterize plasma parameters and the importance of various nonlinear processes. Experimental evidence shows that electron thermal conduction is supersonic in a time scale of the first picosecond after laser irradiation, so fast that it was often left unresolved in the past. The experimental results from frontside probing demonstrate that upon irradiation with a strong (pump) laser pulse, a thin high temperature (∼40eV) super-critical density (∼10 23 /cm 3 ) plasma layer is quickly formed at the target surface which in turn becomes strongly reflective and prevents further transmission of the remainder of the laser pulse. In the bulk region behind the surface, it is also found that a large sub-critical (∼10 18 /cm 3 ) plasma is produced by inverse Bremsstrahlung absorption and collisional ionization. The bulk underdense plasma is evidenced by large absorption of the backside probe light. A simple and analytical model, modified from the avalanche model, for plasma evolution in transparent materials is proposed to explain the experimental results. Elimination of the bulk plasma is then experimentally illustrated by using targets overcoated with highly absorptive films

  13. Concentrator bifacial crystalline silicon solar cells with multi-wire metallization attached to TCO layers using transparent conductive polymers

    Science.gov (United States)

    Untila, Gennady; Chebotareva, Alla; Kost, Tatiana; Salazkin, Sergei; Shaposhnikova, Vera; Shvarts, Maxim

    2017-09-01

    Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are "soldered" during the low-temperature lamination process to the fingers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the α-Si/c-Si heterojunction cells. Here we describe a solar cell design in which wires are attached to TCO layers using transparent conductive polymer (TCP) films. To this end, we have synthesized a number of thermoplastics, poly(arylene ether ketone) copolymers (co-PAEKs), containing phthalide in their main chain. The fraction of phthalide-containing units in the copolymers was p = 3, 5, 15, and 50 mol %. With increasing p, the peak strain temperature of the co-PAEKs rises from 205 to 290 °C and their optical band gap and refractive index increase from 3.12 to 3.15 eV and from 1.6 to 1.614, respectively. The copolymers have a negligible absorption coefficient in the wavelength range 400- 1100 nm. When exposed to an excess pressure of 1 atm or above, co-PAEK films less than 30 µm in thickness undergo a transition from a dielectric to a conductive state. The resistivity (ρC) of wire/TCP/TCO (ITO = In2O3:Sn and IFO = In2O3:F) contacts ranges from 0.37 to 1.43 mΩ cm2. The polymer with the highest phthalide content (p = 50 mol %) has the lowest ρC. The average work of adhesion per unit area determined by pulling off the wires from the polymer surface depends on both the phthalide content of the co-PAEKs and their reduced viscosity, ranging from 14.3 to 43.5 N/cm. The highest value was obtained for the co-PAEK with p = 50 mol %. We have fabricated low-concentration bifacial IFO/(n+pp+)Cz-Si/ITO solar cells with a wire contact grid attached to IFO and ITO using a co-PAEK film. The

  14. Solution-Processable transparent conducting electrodes via the self-assembly of silver nanowires for organic photovoltaic devices.

    Science.gov (United States)

    Tugba Camic, B; Jeong Shin, Hee; Hasan Aslan, M; Basarir, Fevzihan; Choi, Hyosung

    2018-02-15

    Solution-processed transparent conducting electrodes (TCEs) were fabricated via the self-assembly deposition of silver nanowires (Ag NWs). Glass substrates modified with (3-aminopropyl)triethoxysilane (APTES) and (3-mercaptopropyl)trimethoxysilane (MPTES) were coated with Ag NWs for various deposition times, leading to three different Ag NWs samples (APTES-Ag NWs (PVP), MPTES-Ag NWs (PVP), and APTES-Ag NWs (COOH)). Controlling the deposition time produced Ag NWs monolayer thin films with different optical transmittance and sheet resistance. Post-annealing treatment improved their electrical conductivity. The Ag NWs films were successfully characterized using UV-Vis spectroscopy, field emission scanning electron microscopy, optical microscopy and four-point probe. Three Ag NWs films exhibited low sheet resistance of 4-19Ω/sq and high optical transmittance of 65-81% (at 550nm), which are comparable to those of commercial ITO electrode. We fabricated an organic photovoltaic device by using Ag NWs as the anode instead of ITO electrode, and optimized device with Ag NWs exhibited power conversion efficiency of 1.72%. Copyright © 2017 Elsevier Inc. All rights reserved.

  15. Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

    Science.gov (United States)

    Singh, Hemant Kr.; Avasthi, D. K.; Aggarwal, Shruti

    2015-06-01

    Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO2:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In2O3:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag+9 ions at fluences ranging from 3.0 × 1011 ions/cm2 to 3.0 × 1013 ions/cm2. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

  16. Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

    2015-09-30

    Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

  17. New transparent metal-like bilayer composite films with highly conducting layers of {theta}-(BET-TTF){sub 2}Br.3H{sub 2}O nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Mas-Torrent, M.; Laukhina, E.; Rovira, C.; Veciana, J. [Campus Univ. de Bellaterra, Barcelona (Spain). Inst. de Ciencia de Materials; Tkacheva, V. [RAS, Chernogolovka (Russian Federation). Inst. of Problems of Chemical Physics; Zorina, L.; Khasanov, S. [RAS, Chernogolovka (Russian Federation). Inst. of Solid State Physics

    2001-08-01

    A novel conducting bilayer composite (BLC) film-a polycarbonate matrix with a conducting surface layer of a crystalline network of an organic conductor-is presented. A BLC film combines the high stability and physical properties of an organic conductor, in this case the molecular metal {theta}-(BET-TTF){sub 2}Br.3H{sub 2}O, with the flexibility, transparency, and low density of a polymer matrix. The determination of the optimal conditions for the preparation of the new film, which is extremely transparent and has metal-like transport properties down to liquid helium temperature, is described. (orig.)

  18. Rapid fabrication of transparent conductive films with controllable sheet resistance on glass substrates by laser annealing of diamond-like carbon films

    International Nuclear Information System (INIS)

    Lee, Keunhee; Ki, Hyungson

    2016-01-01

    We report a laser-based method for directly fabricating large-area, transparent conductive films with customizable electrical resistance on glass. In this method, a diamond-like carbon (DLC) film is deposited first on a glass substrate by pulsed laser deposition, which is then annealed in a helium shielding environment by a 2 kW continuous-wave fiber laser with a wavelength of 1070 nm, which is transparent to glass but is absorbed by DLC to transform the amorphous carbons to graphene. When a 510 nm thick film was annealed at a scanning speed of 1 m/s by a 200 μm top-hat laser beam, the sp 3 fraction was decreased from 43.1% to 8.1% after the annealing process, and the transformed film showed a transparency of ∼80% (at 550 nm) and a sheet resistance of ∼2050 Ω/sq. We also showed that sheet resistance and transparency can be controlled by changing processing parameters. To show the scalability of the method, a 15 mm wide line beam was used to produce a 15 mm × 15 mm film. This method is simple, fully scalable, transfer-free and catalyst-free, and we believe that the fabricated films can have many applications with further research, such as transparent heating films, electromagnetic shielding films, and transparent electrodes.

  19. THz characterization and demonstration of visible-transparent/terahertz-functional electromagnetic structures in ultra-conductive La-doped BaSnO3 Films.

    Science.gov (United States)

    Arezoomandan, Sara; Prakash, Abhinav; Chanana, Ashish; Yue, Jin; Mao, Jieying; Blair, Steve; Nahata, Ajay; Jalan, Bharat; Sensale-Rodriguez, Berardi

    2018-02-23

    We report on terahertz characterization of La-doped BaSnO 3 (BSO) thin-films. BSO is a transparent complex oxide material, which has attracted substantial interest due to its large electrical conductivity and wide bandgap. The complex refractive index of these films is extracted in the 0.3 to 1.5 THz frequency range, which shows a metal-like response across this broad frequency window. The large optical conductivity found in these films at terahertz wavelengths makes this material an interesting platform for developing electromagnetic structures having a strong response at terahertz wavelengths, i.e. terahertz-functional, while being transparent at visible and near-IR wavelengths. As an example of such application, we demonstrate a visible-transparent terahertz polarizer.

  20. Optical and electrical properties of transparent conductive ITO thin films under proton radiation with 100 keV

    International Nuclear Information System (INIS)

    Wei, Q.; He, S.Y.; Yang, D.Z.; Liu, J.C.

    2005-01-01

    Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2 x 10 16 cm -2 , the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment. (orig.)

  1. ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer.

    Science.gov (United States)

    Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

    2017-01-01

    In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m 2 /g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

  2. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer

    Science.gov (United States)

    Ali, Ahmad Hadi; Abu Bakar, Ahmad Shuhaimi; Hassan, Zainuriah

    2014-10-01

    ITO-based transparent conductive electrodes (TCE) with Ag/Ni thin metal under-layer were deposited on Si and glass substrates by thermal evaporator and RF magnetron sputtering system. Ceramic ITO with purity of 99.99% and In2O3:SnO2 weight ratio of 90:10 was used as a target at room temperature. Post-deposition annealing was performed on the TCE at moderate temperature of 500 °C, 600 °C and 700 °C under N2 ambient. It was observed that the structural properties, optical transmittance, electrical characteristics and surface morphology were improved significantly after the post-annealing process. Post-annealed ITO/Ag/Ni at 600 °C shows the best quality of TCE with figure-of-merit (FOM) of 1.5 × 10-2 Ω-1 and high optical transmittance of 83% at 470 nm as well as very low electrical resistivity of 4.3 × 10-5 Ω-cm. The crystalline quality and surface morphological plays an important role in determining the quality of the TCE multilayer thin films properties.

  3. ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

    Science.gov (United States)

    Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

    2017-09-01

    In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m2/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

  4. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  5. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    International Nuclear Information System (INIS)

    Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

    2006-01-01

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

  8. Construction of a photovoltaic cell based on the photoelectrochemistry of organic dyes at transparent semi-conducting electrodes. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Nasielski, J; Kirsch-De Mesmaeker, A

    1982-01-01

    It is shown that the study of the photoelectrochemical mechanisms of different dye-reductant systems at transparent semi-conducting bubbling gas electrodes, coupled with a detailed analysis of the photovoltammetric curves, allows: a deeper insight into the operation principles of the corresponding dye photogalvanic cells; prediction of the parameters important for optimizing the cell operation; and working out of strategies for improving the cell output. In order to compare the behaviors of an adsorbed type dye (rhodamine-hydroquinone) with a solution type dye in a photogalvanic cell, the thionine-Fe/sup 2 +/ system was examined, including a detailed kinetic analysis of the photocurrents at the bubbling gas electrode as a function of several parameters. Photoelectrochemical mechanisms related to the sensitization and supersensitization in this system have thus been determined. Photoelectrochemical methods were applied to analyze other dye-reductant systems. The photoelectrochemisty of three triphenyl-methanes, methyl violet, crystal violet, and malachite green were examined at the bubbling gas electrode. These dyes produce photocurrents originating from the adsorbed molecules and behave very much like rhodamine. The photoelectrochemical behavior of the erythrosine-hydroquinone couple is also examined. For constructing photogalvanic cells, the CdS-on-SnO/sub 2/-cysteine system is found promising. (LEW)

  9. Roll-to-roll fabrication of a low-reflectance transparent conducting oxide film with subwavelength structures

    Science.gov (United States)

    Chou, Ta-Hsin; Cheng, Kuei-Yuan; Hsieh, Chih-Wei; Takaya, Yasuhiro

    2012-04-01

    The transparent conducting oxide (TCO) film is a significant component in flat panel display, e-paper and touch panel. The tin-doped indium oxide (ITO) material is one of the most popular TCOs. However, ITO has high refractive index, so the phenomenon of high-reflectance limits the wide use of ITO. In this study, the structure and mass production process of new low-reflectance TCO film is verified. Laser interference lithography and the roll-to-roll UV embossing process are used to fabricate subwavelength structures on PET film; then ITO was deposited on structures by roll-to-roll sputtering. When the dimension of structures reaches 300 nm pitch, the optical reflectance and electrical performance of film are reduced to 8.1% at wavelength 550 nm and its transmittance rate is 84.3% at the same wavelength, and the sheet resistance of this film is 50.44 Ω/□. This result indicates that the new TCO proposed in this study is suitable for touch panel and other display applications.

  10. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T L [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Furubayashi, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hirose, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hitosugi, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Shimada, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2007-10-07

    Nb{sub 0.06}Sn{sub x}Ti{sub 0.94-x}O{sub 2} (x {<=} 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of {lambda} = 500 nm is estimated to be 12.4% for Nb{sub 0.06}Sn{sub 0.3} Ti{sub 0.64}O{sub 2} thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO{sub 2}. Low resistivity on the order of 10{sup -4} {omega} cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb{sub 0.06}Sn{sub x} Ti{sub 0.94-x}O{sub 2} thin films (x {<=} 0.2). Optical and transport analyses demonstrate that doping Sn into Nb{sub 0.06} Ti{sub 0.94}O{sub 2} can reduce the refractivity while maintaining low resistivity and high transparency.

  11. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO2 films

    International Nuclear Information System (INIS)

    Chen, T L; Furubayashi, Y; Hirose, Y; Hitosugi, T; Shimada, T; Hasegawa, T

    2007-01-01

    Nb 0.06 Sn x Ti 0.94-x O 2 (x ≤ 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ = 500 nm is estimated to be 12.4% for Nb 0.06 Sn 0.3 Ti 0.64 O 2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO 2 . Low resistivity on the order of 10 -4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb 0.06 Sn x Ti 0.94-x O 2 thin films (x ≤ 0.2). Optical and transport analyses demonstrate that doping Sn into Nb 0.06 Ti 0.94 O 2 can reduce the refractivity while maintaining low resistivity and high transparency

  12. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.

    Science.gov (United States)

    Wang, W Y; Tang, Y L; Zhu, Y L; Suriyaprakash, J; Xu, Y B; Liu, Y; Gao, B; Cheong, S-W; Ma, X L

    2015-11-03

    Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a  . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.

  13. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    International Nuclear Information System (INIS)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

  14. ZnO-Nanorod Dye-Sensitized Solar Cells: New Structure without a Transparent Conducting Oxide Layer

    Directory of Open Access Journals (Sweden)

    Ming-Hong Lai

    2010-01-01

    Full Text Available Conventional nanorod-based dye-sensitized solar cells (DSSCs are fabricated by growing nanorods on top of a transparent conducting oxide (TCO, typically fluorine-doped tin oxide—FTO. The heterogeneous interface between the nanorod and TCO forms a source for carrier scattering. This work reports on a new DSSC architecture without a TCO layer. The TCO-less structure consists of ZnO nanorods grown on top of a ZnO film. The ZnO film replaced FTO as the TCO layer and the ZnO nanorods served as the photoanode. The ZnO nanorod/film structure was grown by two methods: (1 one-step chemical vapor deposition (CVD (2 two-step chemical bath deposition (CBD. The thicknesses of the nanorods/film grown by CVD is more uniform than that by CBD. We demonstrate that the TCO-less DSSC structure can operate properly as solar cells. The new DSSCs yield the best short-current density of 3.96 mA/cm2 and a power conversion efficiency of 0.73% under 85 mW/cm2 of simulated solar illumination. The open-circuit voltage of 0.80 V is markedly higher than that from conventional ZnO DSSCs.

  15. Surface microstructure evolution of highly transparent and conductive Al-doped ZnO thin films and its application in CIGS solar cells

    Science.gov (United States)

    Cheng, Ke; Liu, Jingjing; Jin, Ranran; Liu, Jingling; Liu, Xinsheng; Lu, Zhangbo; Liu, Ya; Liu, Xiaolan; Du, Zuliang

    2017-07-01

    Aluminum-doped zinc oxide (AZO) has attained intensive attention as being a very good transparent conducting oxide for photovoltaic applications. In this work, AZO films have been deposited on glass substrate by radio frequency (RF) magnetron sputtering. The influences of substrate temperatures on morphological, structural, optical and electrical properties of AZO films were systematically investigated. The results indicate that all AZO films have the hexagonal structure with c-axis preferred orientation. Morphological and electrical measurements have revealed that the substrate temperatures have strong influence on the microstructure, optical and electrical properties of AZO films. The AZO film is highly transparent from ultraviolet up to near infrared range with highest average transparency exceeding 83%. The minimum resistivity is as low as 6.1 × 10-4 Ω cm. The carrier concentration and mobility are as high as 3.357 × 1020 cm-3 and 30.48 cm2/Vs, respectively. Finally, the performances of the AZO film are evaluated by its practical application in Cu(In1-xGax)Se2 (CIGS) photovoltaic device as a transparent electrode. Benefited from its highly transparent and conductive feature, the most efficient device reveals an efficiency of 7.8% with a short-circuit current density of 28.99 mA/cm2, an open-circuit voltage of 430 mV, and a fill factor of 62.44 under standard conditions.

  16. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  17. Novel Flexible Transparent Conductive Films with Enhanced Chemical and Electromechanical Sustainability: TiO2 Nanosheet-Ag Nanowire Hybrid.

    Science.gov (United States)

    Sohn, Hiesang; Kim, Seyun; Shin, Weonho; Lee, Jong Min; Lee, Hyangsook; Yun, Dong-Jin; Moon, Kyoung-Seok; Han, In Taek; Kwak, Chan; Hwang, Seong-Ju

    2018-01-24

    Flexible transparent conductive films (TCFs) of TiO 2 nanosheet (TiO 2 NS) and silver nanowire (Ag NW) network hybrid were prepared through a simple and scalable solution-based process. The as-formed TiO 2 NS-Ag NW hybrid TCF shows a high optical transmittance (TT: 97% (90.2% including plastic substrate)) and low sheet resistance (R s : 40 Ω/sq). In addition, the TiO 2 NS-Ag NW hybrid TCF exhibits a long-time chemical/aging and electromechanical stability. As for the chemical/aging stability, the hybrid TCF of Ag NW and TiO 2 NS reveals a retained initial conductivity (ΔR s /R s 4000%) or RuO 2 NS-Ag NW hybrid (ΔR s /R s > 200%). As corroborated by the density functional theory simulation, the superb chemical stability of TiO 2 NS-Ag NW hybrid is attributable to the unique role of TiO 2 NS as a barrier, which prevents Ag NW's chemical corrosion via the attenuated adsorption of sulfidation molecules (H 2 S) on TiO 2 NS. With respect to the electromechanical stability, in contrast to Ag NWs (ΔR/R 0 ∼ 152.9%), our hybrid TCF shows a limited increment of fractional resistivity (ΔR/R 0 ∼ 14.4%) after 200 000 cycles of the 1R bending test (strain: 6.7%) owing to mechanically welded Ag NW networks by TiO 2 NS. Overall, our unique hybrid of TiO 2 NS and Ag NW exhibits excellent electrical/optical properties and reliable chemical/electromechanical stabilities.

  18. Indium-free Cu/fluorine doped ZnO composite transparent conductive electrodes with stretchable and flexible performance on poly(ethylene terephthalate) substrate

    Science.gov (United States)

    Han, Jun; Gong, Haibo; Yang, Xiaopeng; Qiu, Zhiwen; Zi, Min; Qiu, Xiaofeng; Wang, Hongqiang; Cao, Bingqiang

    2015-03-01

    Material-abundant ZnO and metal thin film have been proposed as potential alternatives for the most widely commercial indium tin oxide (ITO) transparent and conductive electrode. Yet the deterioration of optical transparency and conductivity for these materials makes them difficult to compete with ITO. In this work, a double-layer structured film-composed of FZO and Cu film is presented at room temperature, which combines the high transparency of FZO and high conductivity of Cu film. We first studied the effect of oxygen pressure on the transparency and conductivity of free-standing FZO layer deposited on poly(ethylene terephthalate) (PET) by PLD method. Also the structural, electrical, and optical properties of bilayers electrode dependence on the Cu layer thickness were optimized in detail. As the Cu layer thickness increases, the resistivity decreases. The lowest resistivity of 6.6 × 10-5 Ω cm with a carrier concentration of 1.11 × 1022 cm-3 and mobility of 8.52 cm2 V-1 s-1 was obtained at the optimum Cu (12 nm) layer thickness. We find that FZO layer have anti-reflection effect for Cu/FZO (250 nm) bilayer in the wavelength range of 650-1000 nm compared with single Cu layer. And we firstly study the stretchable performance for Cu film-based composite electrodes with stretching ratio changing from 0 to 5%. Furthermore, we study excellent mechanical flexibility and stability of composite electrodes by bending test.

  19. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NARCIS (Netherlands)

    Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

    2014-01-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

  20. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    International Nuclear Information System (INIS)

    Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

    2013-01-01

    Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

  1. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    Energy Technology Data Exchange (ETDEWEB)

    Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

    2013-01-15

    Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

  2. Spectral and optical performance of electrochromic poly(3,4-ethylenedioxythiophene) (PEDOT) deposited on transparent conducting oxide coated glass and polymer substrates

    International Nuclear Information System (INIS)

    Sindhu, S.; Narasimha Rao, K.; Ahuja, Sharath; Kumar, Anil; Gopal, E.S.R.

    2006-01-01

    Electrochromic devices utilizing conjugated polymers as electrochromic layers have gained increasing attention owing to their optical properties, fast switching times and contrast ratios. Polyethylenedioxythiophene (PEDOT) is an excellent material from its electrochromic properties, high conductivity and high stability in the doped form. Aqueous dispersions of PEDOT were either spin coated or electro-polymerized on transparent conducting oxide coated glass and polyethylene tetraphthalate (PET) film substrates. The spectro- and opto-electrochemical studies of the films on transparent conducting oxide coated glass/PET substrates were performed. These films have application in the fabrication of electrochromic windows (smart windows). Smart window devices having excellent switching characteristics over wide range of temperature are used for glazing applications. The aerospace industry is interested in the development of visors and windows that can control glare for pilots and passengers, especially if the coatings can be made on curved surfaces and electrically conducting

  3. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

    2013-09-02

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

  4. High spectral selectivity for solar absorbers using a monolayer transparent conductive oxide coated on a metal substrate

    Science.gov (United States)

    Shimizu, Makoto; Suzuki, Mari; Iguchi, Fumitada; Yugami, Hiroo

    2017-05-01

    A spectrally selective absorber composed of a monolayer transparent conductive oxide (TCO) coated on a metal substrate is investigated for use in solar systems operating at temperatures higher (>973 K) than the operation temperature of conventional systems ( ˜ 673 K). This method is different from the currently used solar-selective coating technologies, such as those using multilayered and cermet materials. The spectral selective absorption property can be attributed to the inherent optical property of TCO owing to the plasma frequency and interferences between the substrates. Since spectral selectivity can be achieved using monolayered materials, the effect of atomic diffusion occurring at each layer boundary in a multilayer or cermet coatings under high-temperature conditions can be reduced. In addition, since this property is attributed to the inherent property of TCO, the precise control of the layer thickness can be omitted if the layer is sufficiently thick (>0.5 μm). The optimum TCO properties, namely, carrier density and mobility, required for solar-selective absorbers are analyzed to determine the cutoff wavelength and emittance in the infrared range. A solar absorptance of 0.95 and hemispherical emittance of 0.10 at 973 K are needed for achieving the optimum TCO properties, i.e., a carrier density of 5.5 × 1020 cm-3 and mobility of 90 cm2 V-1 s-1 are required. Optical simulations indicate that the spectrally selective absorption weakly depends on the incident angle and film thickness. The thermal stability of the fabricated absorber treated at temperatures up to 973 K for 10 h is verified in vacuum by introducing a SiO2 interlayer, which plays an important role as a diffusion barrier.

  5. An easy, low-cost method to transfer large-scale graphene onto polyethylene terephthalate as a transparent conductive flexible substrate

    International Nuclear Information System (INIS)

    Chen, Chih-Sheng; Hsieh, Chien-Kuo

    2014-01-01

    In this study, we develop a low-cost method for transferring a large-scale graphene film onto a flexible transparent substrate. An easily accessible method for home-made chemical vapor deposition (CVD) and a commercial photograph laminator were utilized to fabricate the low-cost graphene-based transparent conductive flexible substrate. The graphene was developed based on CVD growth on nickel foil using a carbon gas source, and the graphene thin film was easily transferred onto the laminating film via a heated photograph laminator. Field emission scanning electron microscopy and atomic force microscopy were utilized to examine the morphological characteristics of the graphene surface. Raman spectroscopy and transmission electron microscopy were utilized to examine the microstructure of the graphene. The optical–electronic properties of the transferred graphene flexible thin film were measured by ultraviolet–visible spectrometry and a four-point probe. The advantage of this method is that large-scale graphene-based thin films can be easily obtained. We provide an economical method for fabricating a graphene-based transparent conductive flexible substrate. - Highlight: • We synthesized the large-scale graphene by thermal CVD method. • A low-cost commercial photograph laminator was used to transfer graphene. • A large-scale transparent and flexible graphene substrate was obtained easily

  6. An easy, low-cost method to transfer large-scale graphene onto polyethylene terephthalate as a transparent conductive flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chih-Sheng; Hsieh, Chien-Kuo, E-mail: jack_hsieh@mail.mcut.edu.tw

    2014-11-03

    In this study, we develop a low-cost method for transferring a large-scale graphene film onto a flexible transparent substrate. An easily accessible method for home-made chemical vapor deposition (CVD) and a commercial photograph laminator were utilized to fabricate the low-cost graphene-based transparent conductive flexible substrate. The graphene was developed based on CVD growth on nickel foil using a carbon gas source, and the graphene thin film was easily transferred onto the laminating film via a heated photograph laminator. Field emission scanning electron microscopy and atomic force microscopy were utilized to examine the morphological characteristics of the graphene surface. Raman spectroscopy and transmission electron microscopy were utilized to examine the microstructure of the graphene. The optical–electronic properties of the transferred graphene flexible thin film were measured by ultraviolet–visible spectrometry and a four-point probe. The advantage of this method is that large-scale graphene-based thin films can be easily obtained. We provide an economical method for fabricating a graphene-based transparent conductive flexible substrate. - Highlight: • We synthesized the large-scale graphene by thermal CVD method. • A low-cost commercial photograph laminator was used to transfer graphene. • A large-scale transparent and flexible graphene substrate was obtained easily.

  7. A transparent conductive oxide electrode with highly enhanced flexibility achieved by controlled crystallinity by incorporating Ag nanoparticles on substrates

    International Nuclear Information System (INIS)

    Triambulo, Ross E.; Cheong, Hahn-Gil; Lee, Gun-Hwan; Yi, In-Sook; Park, Jin-Woo

    2015-01-01

    Highlights: • We developed a composite transparent electrode with Ag nanoparticles and indium-tin-oxide. • Transmittance of AgNPs was improved by formation of oxide layers by O 2 plasma treatment. • Ag nanoparticles became crystalline seeds to grow strong ITO with a uniform growth orientation. • The hybrid electrode is highly more conductive and stable under bending than ITO. - Abstract: We report the synthesis of highly flexible indium tin oxide (ITO) on a polymer substrate whose surface was engineered by oxide-coated Ag nanoparticles (AgNPs) smaller than 20 nm in diameter. Polyimide (PI) substrates were spin coated with Ag ion ink and were subsequently heat treated to form AgNP coatings. The Ag oxide was formed by O 2 plasma treatment to reduce the light absorbance by AgNPs. ITO was dc magnetron sputter-deposited atop the AgNPs. The ITO on the AgNPs was crystalline grown primarily with (2 2 2) growth orientation. This contrasts to the typical microstructure of ITO grown on the polymer, which is that growing c-ITO nucleates are embedded in an amorphous ITO (a-ITO) matrix like a particulate composite. The surface roughness of ITO on AgNPs was as small as the ITO on PI without AgNPs. The crystalline nature of the ITO on the AgNP-coated polymer resulted in the decrease of electric resistivity (ρ) by 65% compared to that of ITO on the bare PI. Furthermore, an electric resistivity change (Δρ) of the ITO on the AgNPs was only 8% at a bending radius (r b ) down to 4 mm, whereas the ITO on the non-coated polymer became almost insulating at an r b of 10 mm, owing to a drastic increase in the number of cracks. To validate the potential application in the displays, flexible organic light emitting diodes (f-OLEDs) were fabricated on the ITO on AgNPs and the performances was compared with the f-OLED on ITO on the bare PI

  8. A transparent conductive oxide electrode with highly enhanced flexibility achieved by controlled crystallinity by incorporating Ag nanoparticles on substrates

    Energy Technology Data Exchange (ETDEWEB)

    Triambulo, Ross E.; Cheong, Hahn-Gil [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of); Lee, Gun-Hwan [Advanced Thin Film Research Group, Korea Institute of Materials Science (KIMS), Changwon (Korea, Republic of); Yi, In-Sook [R and D Center, InkTec Co., Ltd., Ansan (Korea, Republic of); Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

    2015-01-25

    Highlights: • We developed a composite transparent electrode with Ag nanoparticles and indium-tin-oxide. • Transmittance of AgNPs was improved by formation of oxide layers by O{sub 2} plasma treatment. • Ag nanoparticles became crystalline seeds to grow strong ITO with a uniform growth orientation. • The hybrid electrode is highly more conductive and stable under bending than ITO. - Abstract: We report the synthesis of highly flexible indium tin oxide (ITO) on a polymer substrate whose surface was engineered by oxide-coated Ag nanoparticles (AgNPs) smaller than 20 nm in diameter. Polyimide (PI) substrates were spin coated with Ag ion ink and were subsequently heat treated to form AgNP coatings. The Ag oxide was formed by O{sub 2} plasma treatment to reduce the light absorbance by AgNPs. ITO was dc magnetron sputter-deposited atop the AgNPs. The ITO on the AgNPs was crystalline grown primarily with (2 2 2) growth orientation. This contrasts to the typical microstructure of ITO grown on the polymer, which is that growing c-ITO nucleates are embedded in an amorphous ITO (a-ITO) matrix like a particulate composite. The surface roughness of ITO on AgNPs was as small as the ITO on PI without AgNPs. The crystalline nature of the ITO on the AgNP-coated polymer resulted in the decrease of electric resistivity (ρ) by 65% compared to that of ITO on the bare PI. Furthermore, an electric resistivity change (Δρ) of the ITO on the AgNPs was only 8% at a bending radius (r{sub b}) down to 4 mm, whereas the ITO on the non-coated polymer became almost insulating at an r{sub b} of 10 mm, owing to a drastic increase in the number of cracks. To validate the potential application in the displays, flexible organic light emitting diodes (f-OLEDs) were fabricated on the ITO on AgNPs and the performances was compared with the f-OLED on ITO on the bare PI.

  9. Activities towards p-type doping of ZnO

    International Nuclear Information System (INIS)

    Brauer, G; Kuriplach, J; Ling, C C; Djurisic, A B

    2011-01-01

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  10. Activities towards p-type doping of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, G [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Kuriplach, J [Department of Low Temperature Physics, Charles University, V Holetovickach 2, CZ-18000 Prague (Czech Republic); Ling, C C; Djurisic, A B, E-mail: g.brauer@fzd.de [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-01-10

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  11. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  12. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2016-01-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  13. Improved transparent-conducting properties in N2- and H2- annealed GaZnO thin films grown on glass substrates

    International Nuclear Information System (INIS)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon

    2012-01-01

    The effects of N 2 - and H 2 - annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of ∼10 0 Ω·cm and an optical transmittance of ∼86%. After annealing in N 2 or H 2 , the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H 2 -annealed sample, a dramatic decrease in the resistivity (7 x 10 -4 Ω·cm) with a considerable increase in the carrier concentration (4.22 x 10 21 cm -3 ) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H 2 annealing. The sample revealed an enhanced optical transmittance (∼91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H 2 -annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  14. Highly Conductive PEDOT:PSS Films with 1,3-Dimethyl-2-Imidazolidinone as Transparent Electrodes for Organic Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Jin Hee; Joo, Chul Woong; Lee, Jonghee; Seo, Yoon Kyung; Han, Joo Won; Oh, Ji Yoon; Kim, Jong Su; Yu, Seunggun; Lee, Jae Hyun; Lee, Jeong-Ik; Yun, Changhun; Choi, Bum Ho; Kim, Yong Hyun

    2016-09-01

    Highly conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) films as transparent electrodes for organic light-emitting diodes (OLEDs) are doped with a new solvent 1,3-dimethyl-2-imidazolidinone (DMI) and are optimized using solvent post-treatment. The DMI doped PSS films show significantly enhanced conductivities up to 812.1 S cm(-1) . The sheet resistance of the PSS films doped with DMI is further reduced by various solvent post-treatment. The effect of solvent post-treatment on DMI doped PSS films is investigated and is shown to reduce insulating PSS in the conductive films. The solvent posttreated PSS films are successfully employed as transparent electrodes in white OLEDs. It is shown that the efficiency of OLEDs with the optimized DMI doped PSS films is higher than that of reference OLEDs doped with a conventional solvent (ethylene glycol). The results present that the optimized PSS films with the new solvent of DMI can be a promising transparent electrode for low-cost, efficient ITO-free white OLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing

    International Nuclear Information System (INIS)

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-01-01

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10 −2 Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate. (papers)

  16. Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Daeho; Pan, Heng; Kim, Eunpa; Grigoropoulos, Costas P. [University of California, Department of Mechanical Engineering, Berkeley, CA (United States); Ko, Seung Hwan [Korea Advanced Institute of Science and Technology (KAIST), Department of Mechanical Engineering, Daejeon (Korea, Republic of); Park, Hee K. [AppliFlex LLC, Sunnyvale, CA (United States)

    2012-04-15

    A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 x 10{sup -2} {omega} cm, exhibiting a factor of 10{sup 5} higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. (orig.)

  17. Piezoresistance in p-type silicon revisited

    DEFF Research Database (Denmark)

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find...... to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be used to predict the piezoresistance effect in p-type silicon. ©2008 American Institute of Physics...... that the relaxation-time model needs to include all scattering mechanisms in order to obtain correct temperature and acceptor density dependencies. The k·p results are compared to results obtained using a recent tight-binding (TB) model. The magnitude of the pi44 piezocoefficient obtained from the TB model...

  18. Efficient organic photovoltaic cells on a single layer graphene transparent conductive electrode using MoOx as an interfacial layer.

    Science.gov (United States)

    Du, J H; Jin, H; Zhang, Z K; Zhang, D D; Jia, S; Ma, L P; Ren, W C; Cheng, H M; Burn, P L

    2017-01-07

    The large surface roughness, low work function and high cost of transparent electrodes using multilayer graphene films can limit their application in organic photovoltaic (OPV) cells. Here, we develop single layer graphene (SLG) films as transparent anodes for OPV cells that contain light-absorbing layers comprised of the evaporable molecular organic semiconductor materials, zinc phthalocyanine (ZnPc)/fullerene (C60), as well as a molybdenum oxide (MoO x ) interfacial layer. In addition to an increase in the optical transmittance, the SLG anodes had a significant decrease in surface roughness compared to two and four layer graphene (TLG and FLG) anodes fabricated by multiple transfer and stacking of SLGs. Importantly, the introduction of a MoO x interfacial layer not only reduced the energy barrier between the graphene anode and the active layer, but also decreased the resistance of the SLG by nearly ten times. The OPV cells with the structure of polyethylene terephthalate/SLG/MoO x /CuI/ZnPc/C60/bathocuproine/Al were flexible, and had a power conversion efficiency of up to 0.84%, which was only 17.6% lower than the devices with an equivalent structure but prepared on commercial indium tin oxide anodes. Furthermore, the devices with the SLG anode were 50% and 86.7% higher in efficiency than the cells with the TLG and FLG anodes. These results show the potential of SLG electrodes for flexible and wearable OPV cells as well as other organic optoelectronic devices.

  19. Evolution of plant P-type ATPases

    Directory of Open Access Journals (Sweden)

    Christian N.S. Pedersen

    2012-02-01

    Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

  20. Plasmonic transparent conductors

    Science.gov (United States)

    Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

    2016-09-01

    Many of today's technological applications, such as solar cells, light-emitting diodes, displays, and touch screens, require materials that are simultaneously optically transparent and electrically conducting. Here we explore transparent conductors based on the excitation of surface plasmons in nanostructured metal films. We measure both the optical and electrical properties of films perforated with nanometer-scale features and optimize the design parameters in order to maximize optical transmission without sacrificing electrical conductivity. We demonstrate that plasmonic transparent conductors can out-perform indium tin oxide in terms of both their transparency and their conductivity.

  1. Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    2018-01-01

    grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...... solution-processed masks for physical vapor-deposited metal electrodes consisting of hexagonally ordered aperture arrays with scalable aperture-size and spacing in an otherwise homogeneous noble metal thin-film that may exhibit better electrical performance than carbon nanotube-based thin-films...... for equivalent optical transparency. The fabricated electrodes are characterized optically and electrically by measuring transmittance and sheet resistance. The presented methods yield large-scale reproducible results. Experimentally realized thin-films with very low sheet resistance, Rsh = 2.01 ± 0.14 Ω...

  2. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Miyata, Toshihiro; Uozaki, Ryousuke; Sai, Hitoshi; Koida, Takashi

    2016-01-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film

  3. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Miyata, Toshihiro, E-mail: tmiyata@neptune.kanazawa-it.ac.jp [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Uozaki, Ryousuke [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Sai, Hitoshi; Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-09-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film.

  4. Superhydrophobic and anti-reflective ZnO nanorod-coated FTO transparent conductive thin films prepared by a three-step method

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); Huang, Li-jing; Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang, 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing, 225400 (China)

    2016-07-25

    A ZnO nanorod-coated FTO film was prepared by sputtering an AZO layer on FTO glass, thermal annealing of the AZO/FTO film, and hydrothermal growth of ZnO nanorods at 70 °C on the annealed AZO/FTO film using zinc foils as zinc source. Two other ZnO nanorod-coated FTO films were also prepared by hydrothermal growths of ZnO nanorods on the FTO glass and the unannealed AZO/FTO film respectively for comparison purpose. The results were observed in detail using X-ray diffraction, scanning electron microscopy, water contact/sliding angle measurement, spectrophotometry and four-point probe measurement. The ZnO nanorods on the annealed AZO/FTO film were found to exhibit denser distribution and better orientation than those on the FTO glass and the unannealed AZO/FTO film. As a result, the ZnO nanorod-coated annealed AZO/FTO film demonstrated superhydrophobicity, high transparency and low reflectance in the visible range. Also this film had the lowest sheet resistance of 4.0 Ω/sq, implying its good electrical conductivity. This investigation provides a valuable reference for developing multifunctional transparent conductive films. - Highlights: • ZnO nanorod-coated annealed AZO/FTO film was obtained by a three-step method. • FTO and unannealed AZO/FTO films were also used as substrates for comparison. • ZnO nanorods on the annealed AZO/FTO film were denser and more vertically-oriented. • The ZnO nanorod-coated annealed AZO/FTO film (Z/TA-FTO) had superhydrophobicity. • The Z/TA-FTO exhibited high transparency, low reflectance and good conductivity.

  5. Improved transparent-conducting properties in N{sub 2{sup -}} and H{sub 2{sup -}} annealed GaZnO thin films grown on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon [Dongguk University, Seoul (Korea, Republic of)

    2012-01-15

    The effects of N{sub 2{sup -}} and H{sub 2{sup -}} annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of {approx}10{sup 0} {Omega}{center_dot}cm and an optical transmittance of {approx}86%. After annealing in N{sub 2} or H{sub 2}, the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H{sub 2}-annealed sample, a dramatic decrease in the resistivity (7 x 10{sup -4} {Omega}{center_dot}cm) with a considerable increase in the carrier concentration (4.22 x 10{sup 21} cm{sup -3}) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H{sub 2} annealing. The sample revealed an enhanced optical transmittance ({approx}91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H{sub 2}-annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  6. Improvement of Transparent Conducting Performance on Oxygen-Activated Fluorine-Doped Tin Oxide Electrodes Formed by Horizontal Ultrasonic Spray Pyrolysis Deposition.

    Science.gov (United States)

    Koo, Bon-Ryul; Oh, Dong-Hyeun; Riu, Doh-Hyung; Ahn, Hyo-Jin

    2017-12-27

    In this study, highly transparent conducting fluorine-doped tin oxide (FTO) electrodes were fabricated using the horizontal ultrasonic spray pyrolysis deposition. In order to improve their transparent conducting performances, we carried out oxygen activation by adjusting the ratio of O 2 /(O 2 +N 2 ) in the carrier gas (0%, 20%, and 50%) used during the deposition process. The oxygen activation on the FTO electrodes accelerated the substitution concentration of F (F O • ) into the oxygen sites in the FTO electrode while the oxygen vacancy (V O • • ) concentration was reduced. In addition, due to growth of pyramid-shaped crystallites with (200) preferred orientations, this oxygen activation caused the formation of a uniform surface structure. As a result, compared to others, the FTO electrode prepared at 50% O 2 showed excellent electrical and optical properties (sheet resistance of ∼4.0 ± 0.14 Ω/□, optical transmittance of ∼85.3%, and figure of merit of ∼5.09 ± 0.19 × 10 -2 Ω -1 ). This led to a superb photoconversion efficiency (∼7.03 ± 0.20%) as a result of the improved short-circuit current density. The photovoltaic performance improvement can be defined by the decreased sheet resistance of FTO used as a transparent conducting electrode in dye-sensitized solar cells (DSSCs), which is due to the combined effect of the high carrier concentration by the improved F O • concentration on the FTO electrodes and the fasted Hall mobility by the formation of a uniform FTO surface structure and distortion relaxation on the FTO lattices resulting from the reduced V O • • • concentration.

  7. On interaction of P-waves with one-dimensional photonic crystal consisting of weak conducting matter and transparent dielectric layers

    Science.gov (United States)

    Yushkanov, A. A.; Zverev, N. V.

    2018-03-01

    An influence of quantum and spatial dispersion properties of the non-degenerate electron plasma on the interaction of electromagnetic P-waves with one-dimensional photonic crystal consisting of conductor with low carrier electron density and transparent dielectric matter, is studied numerically. It is shown that at the frequencies of order of the plasma frequency and at small widths of the conducting and dielectric layers of the photonic crystal, optical coefficients in the quantum non-degenerate plasma approach differ from the coefficients in the classical electron gas approach. And also, at these frequencies one observes a temperature dependence of the optical coefficients.

  8. P-type silicon drift detectors

    International Nuclear Information System (INIS)

    Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

    1995-06-01

    Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

  9. Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

    Science.gov (United States)

    Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

    2013-06-01

    Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

  10. Enhancement of p-type mobility in tin monoxide by native defects

    KAUST Repository

    Granato, D. B.

    2013-05-31

    Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.

  11. Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

    Energy Technology Data Exchange (ETDEWEB)

    Lluscà, Marta, E-mail: marta.llusca@gmail.com [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain); Future Industries Institute, University of South Australia, Mawson Lakes, 5095 South Australia (Australia); López-Vidrier, Julian [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany); Lauzurica, Sara; Canteli, David; Sánchez-Aniorte, Maria I.; Molpeceres, Carlos [Centro Láser, Universidad Politécnica de Madrid, 28031 Madrid (Spain); Antony, Aldrin [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain); Indian Institute of Technology Bombay, 400076 Mumbai (India); Hernández, Sergi [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); Alcobé, Xavier [Unitat de Difracció de Raigs X, Centres Científics i Tecnològics, Universitat de Barcelona, 08028 Barcelona (Spain); Garrido, Blas [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); Bertomeu, Joan [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain)

    2017-05-15

    A transparent and conducting ZnO:Er:Yb thin film with upconversion properties has been achieved after being annealed with continuous laser radiation just before the ablation point of the material. This work demonstrates that the laser energy preserves the conductivity of the film and at the same time creates an adequate surrounding for Er and Yb to produce visible upconversion at 660, 560, 520, and 480 nm under 980 nm laser excitation. The relation between the structural, electrical and upconversion properties is discussed. It is observed that the laser energy melts part of the material, which recrystallizes creating rare earth oxides and two different wurtzite structures, one with substitutional rare earths and oxygen vacancies (responsible for the conductivity) and the other without substitutional rare earth ions (responsible for the upconversion emission).

  12. Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

    2016-04-30

    Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

  13. Young's Modulus and Coefficient of Linear Thermal Expansion of ZnO Conductive and Transparent Ultra-Thin Films

    Directory of Open Access Journals (Sweden)

    Naoki Yamamoto

    2011-01-01

    Full Text Available A new technique for measuring Young's modulus of an ultra-thin film, with a thickness in the range of about 10 nm, was developed by combining an optical lever technique for measuring the residual stress and X-ray diffraction for measuring the strain in the film. The new technique was applied to analyze the mechanical properties of Ga-doped ZnO (GZO films, that have become the focus of significant attention as a substitute material for indium-tin-oxide transparent electrodes. Young's modulus of the as-deposited GZO films decreased with thickness; the values for 30 nm and 500 nm thick films were 205 GPa and 117 GPa, respectively. The coefficient of linear thermal expansion of the GZO films was measured using the new technique in combination with in-situ residual stress measurement during heat-cycle testing. GZO films with 30–100 nm thickness had a coefficient of linear thermal expansion in the range of 4.3 × 10−6 – 5.6 × 10−6 °C−1.

  14. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2011-07-15

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  15. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    International Nuclear Information System (INIS)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2011-01-01

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10 -4 Ω cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm 2 /Vs and carrier concentrations on the order of 10 20 cm -3 . All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10 -3 -10 -4 Ω cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  16. Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques.

    Science.gov (United States)

    Hemasiri, Bastian Waduge Naveen Harindu; Kim, Jae-Kwan; Lee, Ji-Myon

    2017-12-19

    Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthesized by a two-step process: 10 wt. % tin-doped ITO thin films were produced by an environmentally friendly aqueous sol-gel spin coating technique with economical salts of In(NO 3 ) 3 .H 2 O and SnCl 4 , without using organic additives, on surface free energy enhanced (from 53.826 to 97.698 mJm -2 ) glass substrate by oxygen plasma treatment, which facilitated void-free continuous ITO film due to high surface wetting. The chemical vapor deposited monolayer graphene was transferred onto the synthesized ITO to enhance its electrical properties and it was capable of reducing sheet resistance over 12% while preserving the bi-film surface smoother. The ITO films contain the In 2 O 3 phase only and exhibit the polycrystalline nature of cubic structure with 14.35 ± 0.5 nm crystallite size. The graphene/ITO bi-film exhibits reproducible optical transparency with 88.66% transmittance at 550 nm wavelength, and electrical conductivity with sheet resistance of 117 Ω/sq which is much lower than that of individual sol-gel derived ITO film.

  17. Roughness-based monitoring of transparency and conductivity in boron-doped ZnO thin films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    Gaikwad, Rajendra S.; Bhande, Sambhaji S.; Mane, Rajaram S.; Pawar, Bhagwat N.; Gaikwad, Sanjay L.; Han, Sung-Hwan; Joo, Oh-Shim

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► We report surface roughness dependent transparency and conductivity in ZnO films. ► The surface roughness with respected to boron doping concentrations is studied. ► Boron doped and pristine Zinc oxide thin films have showed ≥95% transmittance. ► Increased carrier concentration of 9.21 × 10 21 cm −3 revealed from Hall measurement. -- Abstract: Sprayed polycrystalline ZnO and boron-doped ZnO thin films composed of spherical grains of 25–32 nm in diameters are used in roughness measurement and further correlated with the transparency and the conductivity characteristics. The surface roughness is increased up to Zn 0.98 B 0.02 O and then declined at higher boron concentrations. The sprayed ZnO films revealed ≥95% transmittance in the visible wavelength range, 1.956 × 10 −4 Ω cm electrical resistivity, 46 cm 2 /V s Hall mobility and 9.21 × 10 21 cm −3 charge carrier concentration. The X-ray photoelectron spectroscopy study has confirmed 0.15 eV binding energy change for Zn 2p 3/2 when 2 at% boron content is mixed without altering electro-optical properties substantially. Finally, using soft modeling importance of these textured ZnO over non-textured films for enhancing the solar cells performance is explored.

  18. Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

    Science.gov (United States)

    Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

    2015-09-01

    The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

  19. Transparent conducting properties of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} polycrystalline films on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hitosugi, T. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: hitosugi@chem.s.u-tokyo.ac.jp; Ueda, A. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S.; Yamada, N.; Furubayashi, Y.; Hirose, Y.; Konuma, S. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Shimada, T.; Hasegawa, T. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2008-07-01

    We report on transparent conducting properties of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 deg. C, with subsequent H{sub 2}-annealing at 500 deg. C. Polycrystalline TNO films showed resistivity of 4.5 x 10{sup -4} {omega} cm and 1.5 x 10{sup -3} {omega} cm for films prepared at substrate temperature of room temperature and 250 deg. C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films.

  20. Development of high-performance transparent conducting oxides and their impact on the performance of CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Coutts, T.J.; Wu, X.; Sheldon, P.; Rose, D.H. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    This paper begins with a review of the modeled performance of transparent conducting oxides (TCOs) as a function of their free-carrier concentration, mobility, and film thickness. It is shown that it is vital to make a film with high mobility to minimize the width and height of the free-carrier absorption band, and to optimize the optical properties. The free-carrier concentration must be kept sufficiently small that the absorption band does not extend into that part of the spectrum to which the solar cell responds. Despite this consideration, a high electrical conductivity is essential to minimize series resistance losses. Hence, a high mobility is vital for these materials. The fabrication of thin-films of cadmium stannate is then discussed, and their performance is compared with that of tin oxide, both optically and as these materials influence the performance of CdTe solar cells.

  1. Rapid synthesis of ultra-long silver nanowires for tailor-made transparent conductive electrodes: proof of concept in organic solar cells

    Science.gov (United States)

    José Andrés, Luis; Menéndez, María Fe; Gómez, David; Martínez, Ana Luisa; Bristow, Noel; Kettle, Jeffrey Paul; Menéndez, Armando; Ruiz, Bernardino

    2015-07-01

    Rapid synthesis of ultralong silver nanowires (AgNWs) has been obtained using a one-pot polyol-mediated synthetic procedure. The AgNWs have been prepared from the base materials in less than one hour with nanowire lengths reaching 195 μm, which represents the quickest synthesis and one of the highest reported aspect ratios to date. These results have been achieved through a joint analysis of all reaction parameters, which represents a clear progress beyond the state of the art. Dispersions of the AgNWs have been used to prepare thin, flexible, transparent and conducting films using spray coating. Due to the higher aspect ratio, an improved electrical percolation network is observed. This allows a low sheet resistance (RS = 20.2 Ω/sq), whilst maintaining high optical film transparency (T = 94.7%), driving to the highest reported figure-of-merit (FoM = 338). Owing to the light-scattering influence of the AgNWs, the density of the AgNW network can also be varied to enable controllability of the optical haze through the sample. Based on the identification of the optimal haze value, organic photovoltaics (OPVs) have been fabricated using the AgNWs as the transparent electrode and have been benchmarked against indium tin oxide (ITO) electrodes. Overall, the performance of OPVs made using AgNWs sees a small decrease in power conversion efficiency (PCE), primarily due to a fall in open-circuit voltage (50 mV). This work indicates that AgNWs can provide a low cost, rapid and roll-to-roll compatible alternative to ITO in OPVs, with only a small compromise in PCE needed.

  2. Rapid synthesis of ultra-long silver nanowires for tailor-made transparent conductive electrodes: proof of concept in organic solar cells

    International Nuclear Information System (INIS)

    José Andrés, Luis; Fe Menéndez, María; Gómez, David; Luisa Martínez, Ana; Menéndez, Armando; Bristow, Noel; Paul Kettle, Jeffrey; Ruiz, Bernardino

    2015-01-01

    Rapid synthesis of ultralong silver nanowires (AgNWs) has been obtained using a one-pot polyol-mediated synthetic procedure. The AgNWs have been prepared from the base materials in less than one hour with nanowire lengths reaching 195 μm, which represents the quickest synthesis and one of the highest reported aspect ratios to date. These results have been achieved through a joint analysis of all reaction parameters, which represents a clear progress beyond the state of the art. Dispersions of the AgNWs have been used to prepare thin, flexible, transparent and conducting films using spray coating. Due to the higher aspect ratio, an improved electrical percolation network is observed. This allows a low sheet resistance (R_S = 20.2 Ω/sq), whilst maintaining high optical film transparency (T = 94.7%), driving to the highest reported figure-of-merit (FoM = 338). Owing to the light-scattering influence of the AgNWs, the density of the AgNW network can also be varied to enable controllability of the optical haze through the sample. Based on the identification of the optimal haze value, organic photovoltaics (OPVs) have been fabricated using the AgNWs as the transparent electrode and have been benchmarked against indium tin oxide (ITO) electrodes. Overall, the performance of OPVs made using AgNWs sees a small decrease in power conversion efficiency (PCE), primarily due to a fall in open-circuit voltage (50 mV). This work indicates that AgNWs can provide a low cost, rapid and roll-to-roll compatible alternative to ITO in OPVs, with only a small compromise in PCE needed. (paper)

  3. Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

    2013-01-15

    Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

  4. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  5. Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

    Science.gov (United States)

    Zhu, Jiayi; He, Junhui

    2012-05-01

    We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

  6. Highly transparent conductive AZO/Zr50Cu50/AZO films in wide range of visible and near infrared wavelength grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Jingyun Cheng

    Full Text Available Novel AZO/Zr50Cu50/AZO tri-layer transparent conductive films with excellent transmittance in both visible and near infrared region were successfully prepared by pulsed laser deposition on glass substrates. The electrical and optical properties were investigated at various Zr50Cu50 thicknesses. As the AZO thickness was fixed at 50 nm and Zr50Cu50 thickness was varied between 1 and 18 nm, it was found that AZO (50 nm/Zr50Cu50/AZO (50 nm tri-layer films exhibited good conductivity and high transmittance in both visible and near infrared wavelength. Additionally, both the electrical and optical properties of AZO (50 nm/Zr50Cu50 (2 nm/AZO (50 nm tri-layer films were found to be sensitive to the growth temperature. In this work, the lowest sheet resistance (43 Ω/□ and relatively high transmittance (∼80% in the range of 400–2000 nm were achieved while the growth temperature was 350 °C. Furthermore, the AZO (50 nm/Zr50Cu50 (2 nm/AZO (50 nm thin film deposited at 350 °C exhibits the highest figure of merit of 1.42 × 10−3 Ω−1, indicating that the multilayer is promising for coated glasses and thin film solar cells. Keywords: Transparent conductive oxide, AZO, Zr50Cu50, Electrical and optical properties, Visible and near infrared transmittance

  7. Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

    Directory of Open Access Journals (Sweden)

    Shibu Saha

    2011-12-01

    Full Text Available Highly c-axis oriented Al and Fe co-doped ZnO (ZAF thin film is prepared by pulsed laser deposition. Fe introduces redox centre along with shallow donor level while Al doping enhances conductivity of ZnO, thus removing the requirement of both mediator and bottom conducting layer in bioelectrode. Model enzyme (glucose oxidase, was immobilized on surface of ZAF matrix. Cyclic voltammetry and photometric assay show that prepared bio-electrode is sensitive to glucose concentration with enhanced response of 0.18 μAmM-1cm-2 and low Km ∼ 2.01 mM. The results illustrate that ZAF is an attractive matrix for realization of miniaturized mediator-less solid state biosensor.

  8. Studies on e-beam deposited transparent conductive films of In/sub 2/O/sub 3/ - Sn at moderate substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Agnihotry, S.A.; Saini, K.K.; Saxena, T.K.; Nagpal, K.C.; Chandra, S.

    1985-10-01

    An electron beam evaporation method is used to prepare In/sub 2/O/sub 3/ films with and without Sn doping. It is shown that highly transparent and conducting films can be prepared at substrate temperature as low as 200 C. The characteristic feature of such films is their high carrier density and high infrared reflectivity. The lowest resistivity is found to be 0.00024 ohm cm with a carrier concentration of 8 x 10 to the 20th per cu cm and mobility of about 30 per cm/V s at the doping level of 4 mol percent SnO/sub 2/. These polycrystalline films show a highly preferred orientation. On the basis of Hall measurements and structural data, sources of scattering in these films are suggested. 29 references.

  9. Highly transparent and thermal-stable silver nanowire conductive film covered with ZnMgO by atomic-layer-deposition

    Science.gov (United States)

    Wang, Lei; Huang, Dongchen; Li, Min; Xu, Hua; Zou, Jianhua; Tao, Hong; Peng, Junbiao; Xu, Miao

    2017-12-01

    Solution-processed silver nanowires (AgNWs) have been considered as a promising material for next generation flexible transparent conductive electrodes. However AgNWs films have several intrinsic drawbacks, such as thermal stability and storage stability. Herein, we demonstrate a laminated ZnO/MgO (ZnMgO, ZMO) as a protective layer on the AgNWs films using atomic layer deposition (ALD). The fabricated films exhibited a low sheet resistance of 16 Ω/sq with high transmittance of 91% at 550 nm, an excellent thermal stability and bending property. The ZMO film grows perpendicularly on the surface of the AgNWs, making a perfect coverage of bulk silver nanowires and junction, which can effectively prompt the electrical transport behavior and enhance stability of the silver nanowires network.

  10. Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Moriga, Toshihiro; Mikawa, Michio; Sakakibara, Yuji; Misaki, Yukinori; Murai, Kei-ichiro; Nakabayashi, Ichiro; Tominaga, Kikuo; Metson, James B.

    2005-01-01

    Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In 2 O 3 mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In 2 O 3 thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films

  11. Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

    2015-10-01

    The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

  12. High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

    Directory of Open Access Journals (Sweden)

    Jung-Sik Kim

    2016-09-01

    Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

  13. Improved Long-Term Stability of Transparent Conducting Electrodes Based on Double-Laminated Electrosprayed Antimony Tin Oxides and Ag Nanowires

    Directory of Open Access Journals (Sweden)

    Koo B.-R.

    2017-06-01

    Full Text Available We fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 250°C. They also exhibited excellent and superior long-term chemical and thermal stabilities and adhesion to substrate because double-laminated antimony tin oxide thin films act as the protective layers between Ag nanowires, blocking Ag atoms penetration.

  14. Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

    International Nuclear Information System (INIS)

    Cho, Dae-Hyung; Chung, Yong-Duck; Lee, Kyu-Seok; Park, Nae-Man; Kim, Kyung-Hyun; Choi, Hae-Won; Kim, Jeha

    2012-01-01

    We have studied the influence of growth temperature (T G ) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G . For a T G ≤ 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p–n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency.

  15. Effects of pulsed sputtering frequency on the uniformity of Al:ZnO's transparent conductive oxide properties for solar cell applications

    International Nuclear Information System (INIS)

    Yang, Wonkyun; Joo, Junghoon

    2009-01-01

    Bipolar pulsed magnetron sputtering is used to deposit Al doped ZnO (AZO) on a glass substrate for a transparent conducting oxide in a solar cell structure. A 5x25 in. 2 AZO target was sputtered by 50-250 kHz bipolar pulsed dc power supply to deposit a 400x400 mm 2 area by swinging back and forth. Sheet resistance, surface morphology, and optical transmittance were measured at different positions on 16 witness samples (small glass slides) to evaluate uniformity. In the thickness of 800 nm, the average value of sheet resistance was 30 Ω/□ and the average resistivity was 2.1x10 -3 Ω cm. Transmittance was 50%-80% over the visible range. The nonuniformities of thickness, transmittance, and resistivity in the 400x400 mm 2 area were 5.8%, 0.8%, and within 9.5%, respectively.

  16. A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

    Directory of Open Access Journals (Sweden)

    Daniela Lehr

    2015-11-01

    Full Text Available Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides. Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+. Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides. A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl. We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.

  17. The effect of Cu on the properties of CdO/Cu/CdO multilayer films for transparent conductive electrode applications

    Energy Technology Data Exchange (ETDEWEB)

    Raaif, M.; Mohamed, S.H. [Sohag University, Physics Department, Faculty of Science, Sohag (Egypt)

    2017-06-15

    Transparent conductive CdO/Cu/CdO multilayer films were prepared using rf plasma magnetron sputtering and electron beam evaporation techniques. The CdO layers were prepared using rf plasma magnetron sputtering, while the Cu interlayer was prepared by electron beam evaporation technique. The Cu layer thickness was varied between 1 and 10 nm. The structural and optical properties as well as the sheet resistance of the multilayer films were studied. X-ray diffraction measurements revealed the presence of cubic CdO structure and the Cu peak was only observed for the multilayers prepared with 10 nm of Cu. It has been observed that the Cu interlayer thickness has a great influence on the optical and electrical properties of the multilayers. The transmittance of the multilayer films decreased while the reflectance increased with increasing Cu interlayer thickness. The refractive index and the extinction coefficient of the multilayer films were calculated. The estimated optical band gap values were found to be decreased from 2.75 ± 0.02 to 2.40 ± 0.02 eV as the Cu interlayer thickness increased from 1 to 10 nm. The sheet resistance was sensitive to the Cu interlayer thickness and it decreased with increasing Cu interlayer thickness. A sheet resistSSance of 21.7 Ω/sq, an average transmittance (between 700 and 1000 nm) of 77%, and an optical band gap of 2.5 ± 0.02 eV were estimated for the multilayer film with 2 nm Cu layer. The multilayer film with 2 nm Cu layer has the highest figure of merit value of 3.2 x 10{sup -3} Ω{sup -1}. This indicates that the properties of this multilayer film are suitable for transparent conductive electrode applications. (orig.)

  18. Flexible white phosphorescent organic light emitting diodes based on multilayered graphene/PEDOT:PSS transparent conducting film

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xiaoxiao; Li, Fushan, E-mail: fushanli@hotmail.com; Wu, Wei; Guo, Tailiang, E-mail: gtl_fzu@hotmail.com

    2014-03-01

    Highlights: • A double-layered graphene/PEDOT:PSS film was fabricated by spray-coating. • A white flexible phosphorescent OLED was fabricated based on this film. • The white flexible OLED presented pure white light emission. • The flexible OLEDs showed a stable white emission during bending test. - Abstract: A double-layered graphene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) conductive film was prepared, in which the PEDOT:PSS layer was obtained by using spray-coating technique. A flexible white phosphorescent organic light-emitting devices based on the graphene/PEDOT:PSS conductive film was fabricated. Phosphorescent material tris(2-phenylpyridine) iridium (Ir(ppy){sub 3}) and the fluorescent dye 5,6,11,12-tetraphenylnapthacene (Rubrene) were co-doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host. N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine (NPB) and 4,7-diphenyl-1,10-phenanthroline (Bphen) were used as hole-transporting and electron-transporting layer, respectively, and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl (DPVBi) was used as blue light-emitting layer. The device presented pure white light emission with a Commission Internationale De I’Eclairage coordinates of (0.31, 0.33) and exhibited an excellent light-emitting stability during the bending cycle test with a radius of curvature of 10 mm.

  19. Flexible white phosphorescent organic light emitting diodes based on multilayered graphene/PEDOT:PSS transparent conducting film

    International Nuclear Information System (INIS)

    Wu, Xiaoxiao; Li, Fushan; Wu, Wei; Guo, Tailiang

    2014-01-01

    Highlights: • A double-layered graphene/PEDOT:PSS film was fabricated by spray-coating. • A white flexible phosphorescent OLED was fabricated based on this film. • The white flexible OLED presented pure white light emission. • The flexible OLEDs showed a stable white emission during bending test. - Abstract: A double-layered graphene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) conductive film was prepared, in which the PEDOT:PSS layer was obtained by using spray-coating technique. A flexible white phosphorescent organic light-emitting devices based on the graphene/PEDOT:PSS conductive film was fabricated. Phosphorescent material tris(2-phenylpyridine) iridium (Ir(ppy) 3 ) and the fluorescent dye 5,6,11,12-tetraphenylnapthacene (Rubrene) were co-doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host. N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine (NPB) and 4,7-diphenyl-1,10-phenanthroline (Bphen) were used as hole-transporting and electron-transporting layer, respectively, and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl (DPVBi) was used as blue light-emitting layer. The device presented pure white light emission with a Commission Internationale De I’Eclairage coordinates of (0.31, 0.33) and exhibited an excellent light-emitting stability during the bending cycle test with a radius of curvature of 10 mm

  20. Novel Transparent Phosphor Conversion Matrix with High Thermal Conductivity for Next Generation Phosphor-Converted LED-based Solid State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Bockstaller, Michael [Carnegie Mellon Univ., Pittsburgh, PA (United States)

    2017-02-06

    The low thermal conductivity of state-of-the-art polymer encapsulants (k ~ 0.15 Wm-1K-1) limits the efficiency and power density of current phosphor conversion light emitting diodes (pc-LEDs). The technical objective of this project was to demonstrate synthesis and processing schemes for the fabrication of polymer hybrid encapsulants with a thermal conductivity exceeding k = 0.4 Wm-1K-1 for LED applications. The ‘hybrid polymer’ approach encompasses the dispersion of high thermal conductivity particle fillers (zinc oxide, ZnO as well as the alpha-polymorph of alumina, Al2O3) within a polysiloxane matrix (poly(dimethylsiloxane), PDMS as well as poly(phenyl methyl siloxane), PPMS) to increase the thermal conductivity while maintaining optical transparency and photothermal stability at levels consistent with LED applications. To accomplish this goal, a novel synthesis method for the fabrication of nanosized ZnO particles was developed and a novel surface chemistry was established to modify the surface of zinc oxide particle fillers and thus to enable their dispersion in poly(dimethyl siloxane) (PDMS) matrix polymers. Molecular dynamics and Mie simulations were used to optimize ligand structure and to enable the concurrent mixing of particles in PDMS/PPMS embedding media while also minimizing the thermal boundary resistance as well as optical scattering of particle fillers. Using this approach the synthesis of PDMS/ZnO hybrid encapsulants exhibiting a thermal conductivity of 0.64 Wm-1K-1 and optical transparency > 0.7 mm-1 was demonstrated. A forming process based on micromolding was developed to demonstrate the forming of particle filled PDMS into film and lens shapes. Photothermal stability testing revealed stability of the materials for approximately 4000 min when exposed to blue light LED (450 nm, 30 W/cm2). One postgraduate and seven graduate students were supported by the project. The research performed within this project led to fifteen publications in peer

  1. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

    2009-01-01

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

  2. Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

    Science.gov (United States)

    Mondal, Praloy; Das, Debajyoti

    2017-07-01

    Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I〈002〉/I〈103〉 > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm-1 and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO2 coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (VOC) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO2 counterpart, maintains a high transparency to the solar radiation and improves the VOC, while reduced diffusion of Zn across the p-layer creates less defects at the p-i interface in Si:H cells and thereby, increases the FF. Nearly identical conversion efficiency is preserved for both TCO substrates. Excellent c-axis orientation even at low growth temperature promises improved device performance by extended parametric optimization.

  3. Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

    2016-02-29

    In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

  4. Numerical studies of heat transfer by simultaneous radiative-conduction and radiative-convection in a two dimensional semi-transparent medium

    International Nuclear Information System (INIS)

    Draoui, Abdeslam

    1989-01-01

    The works we present here are on numerical approaches of heat transfer coupling radiation-conduction and radiation-convection within semi-transparent two-dimensional medium. The first part deals with a review of equations of radiative transfer and introduces three numerical methods (Pl, P3, Hottel's zones) which enable one to solve this problem in a two-dimensional environment. After comparing the three methods in the case where radiation is the only mode of transfer, we introduce in the second chapter a study of the coupling of radiation with conduction. So, a fourth method is used to solve this problem. These comparisons lead us to various methods which enable us to show the interest of the spherical harmonics approximations. In the third part, the Pl approximation is kept because it is simple to use, moreover it enables us to introduce both the coupling of radiative transfers with laminar convective equations in a thermally driven two-dimensional cavity. The results show a significant influence of the radiative participation of the fluid on heat and dynamic transfer we met in this type of problem. (author) [fr

  5. Vacuum-annealing induced enhancements in the transparent conducting properties of Mo  +  F doped ZnO thin films

    Science.gov (United States)

    Dineshbabu, N.; Ravichandran, K.

    2017-09-01

    The decisive aim of the present study is to enhance the transparent conducting properties of Mo  +  F co-doped ZnO films through annealing. In this work, Mo  +  F co-doped ZnO (MFZO) films were deposited on glass substrates at a deposition temperature of 350 °C using a home-made nebulizer spray pyrolysis technique and the prepared samples were annealed under air and vacuum atmosphere at 400 °C for 2 h. The structural, electrical, optical, surface morphological and elemental properties of as-deposited, air-annealed and vacuum-annealed samples were compared using various analytical techniques. The vacuum-annealed sample shows lowest resistivity of 1.364  ×  10-3 Ω cm and high transmittance of 90% in the visible region with high ohmic conducting nature. The optical bandgap of the sample was found to be increased to 3.36 eV after vacuum annealing treatment. The XRD patterns of the films confirmed the polycrystalline nature. The PL measurements show the defect levels of the deposited films. The FESEM and AFM studies show an increase in the grain size and roughness of the films, respectively, after vacuum-annealing treatment. The presence of the elements before and after annealing treatment was confirmed using XPS analysis.

  6. Solution-processed highly conductive PEDOT:PSS/AgNW/GO transparent film for efficient organic-Si hybrid solar cells.

    Science.gov (United States)

    Xu, Qiaojing; Song, Tao; Cui, Wei; Liu, Yuqiang; Xu, Weidong; Lee, Shuit-Tong; Sun, Baoquan

    2015-02-11

    Hybrid solar cells based on n-Si/poly(3,4-ethylenedioxythiophene):poly(styrene- sulfonate) (PEDOT:PSS) heterojunction promise to be a low cost photovoltaic technology by using simple device structure and easy fabrication process. However, due to the low conductivity of PEDOT:PSS, a metal grid deposited by vacuum evaporation method is still required to enhance the charge collection efficiency, which complicates the device fabrication process. Here, a solution-processed graphene oxide (GO)-welded silver nanowires (AgNWs) transparent conductive electrode (TCE) was employed to replace the vacuum deposited metal grid. A unique "sandwich" structure was developed by embedding an AgNW network between PEDOT:PSS and GO with a figure-of-merit of 8.6×10(-3) Ω(-1), which was even higher than that of sputtered indium tin oxide electrode (6.6×10(-3) Ω(-1)). A champion power conversion efficiency of 13.3% was achieved, because of the decreased series resistance of the TCEs as well as the enhanced built-in potential (Vbi) in the hybrid solar cells. The TCEs were obtained by facile low-temperature solution process method, which was compatible with cost-effective mass production technology.

  7. Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    2018-01-01

    with the sharing of information and the perceived quality of the information shared. This narrow focus on information and quality, however, overlooks the dynamics of organizational transparency. To provide a more structured conceptualization of organizational transparency, this article unpacks the assumptions......Transparency is an increasingly prominent area of research that offers valuable insights for organizational studies. However, conceptualizations of transparency are rarely subject to critical scrutiny and thus their relevance remains unclear. In most accounts, transparency is associated...... that shape the extant literature, with a focus on three dimensions: conceptualizations, conditions, and consequences. The contribution of the study is twofold: (a) On a conceptual level, we provide a framework that articulates two paradigmatic positions underpinning discussions of transparency, verifiability...

  8. TRANSPARENT CONCRETE

    OpenAIRE

    Sandeep Sharma*, Dr. O.P. Reddy

    2017-01-01

    Transparent concrete is the new type of concrete introduced in todays world which carries special property of light transmitting due to presence of light Optical fibres. Which is also known as translucent concrete or light transmitting concrete, it is achieved by replacing coarse aggregates with transparent alternate materials (Optical fibres). The binding material in transparent concrete may be able to transmit light by using clear resins the concrete mix. The concrete used in industry in pr...

  9. Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Praloy; Das, Debajyoti, E-mail: erdd@iacs.res.in

    2017-07-31

    Highlights: • ZnO:Ga film with perpetual c-axis orientation at low T{sub S} by RF magnetron sputtering. • High conductivity (200 S cm{sup −1}) and elevated transmission (∼93% at 500 nm) in nano-sheet like structure. • Si solar cell on ZnO:Ga with efficiency comparable to similar cell on U-type SnO{sub 2} coated Asahi glass. • Higher open circuit voltage and better fill factor with ZnO:Ga than SnO{sub 2}. - Abstract: Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I{sub 〈002〉}/I{sub 〈103〉} > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm{sup −1} and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO{sub 2} coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (V{sub OC}) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO{sub 2} counterpart, maintains a high transparency to the solar

  10. High mobility In{sub 2}O{sub 3}:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Macco, B.; Wu, Y.; Vanhemel, D. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

    2014-12-01

    The preparation of high-quality In{sub 2}O{sub 3}:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In{sub 2}O{sub 3}:H films were deposited by atomic layer deposition at 100 C, after which they underwent solid phase crystallization by a short anneal at 200 C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm{sup 2}/V s at a device-relevant carrier density of 1.8 x 10{sup 20} cm{sup -3}. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Fabrication of transparent, tough, and conductive shape-memory polyurethane films by incorporating a small amount of high-quality graphene.

    Science.gov (United States)

    Jung, Yong Chae; Kim, Jin Hee; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

    2012-04-23

    We report a mechanically strong, electrically and thermally conductive, and optically transparent shape-memory polyurethane composite which was fabricated by introducing a small amount (0.1 wt%) of high-quality graphene as a filler. Geometrically large (≈4.6 μm(2)), but highly crystallized few-layer graphenes, verified by Raman spectroscopy and transmission electron microscopy, were prepared by the sonication of expandable graphite in an organic solvent. Oxygen- containing functional groups at the edge plane of graphene were crucial for an effective stress transfer from the graphene to polyurethane. Homogeneously dispersed few-layered graphene enabled polyurethane to have a high shape recovery force of 1.8 MPa cm(-3). Graphene, which is intrinsically stretchable up to 10%, will enable high-performance composites to be fabricated at relatively low cost and we thus envisage that such composites may replace carbon nanotubes for various applications in the near future. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Laser welding of nanoparticulate TiO2 and transparent conducting oxide electrodes for highly efficient dye-sensitized solar cell

    International Nuclear Information System (INIS)

    Kim, Jinsoo; Kim, Jonghyun; Lee, Myeongkyu

    2010-01-01

    Poor interfacial contact is often encountered in nanoparticulate film-based devices. The dye-sensitized solar cell (DSSC) is a representative case in which a nanoporous TiO 2 electrode needs to be prepared on the transparent conducting oxide (TCO)-coated glass substrate. In this study, we demonstrate that the inter-electrode contact resistance accounts for a considerable portion of the total resistance of a DSSC and its efficiency can be greatly enhanced by welding the interface with a laser. TiO 2 films formed on the TCO-coated glass substrate were irradiated with a pulsed ultraviolet laser beam at 355 nm; this transmits through the TCO and glass but is strongly absorbed by TiO 2 . Electron microscopy analysis and impedance measurements showed that a thin continuous TiO 2 layer is formed at the interface as a result of the local melting of TiO 2 nanoparticles and this layer completely bridges the gap between the two electrodes, improving the current flow with a reduced contact resistance. We were able to improve the efficiency by 35-65% with this process. DSSCs fabricated using a homemade TiO 2 paste revealed an efficiency improvement from η = 3.3% to 5.4%, and an increase from 8.2% to 11.2% was achieved with the TiO 2 electrodes made from a commercial paste.

  13. Laser welding of nanoparticulate TiO{sub 2} and transparent conducting oxide electrodes for highly efficient dye-sensitized solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jinsoo; Kim, Jonghyun; Lee, Myeongkyu, E-mail: myeong@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2010-08-27

    Poor interfacial contact is often encountered in nanoparticulate film-based devices. The dye-sensitized solar cell (DSSC) is a representative case in which a nanoporous TiO{sub 2} electrode needs to be prepared on the transparent conducting oxide (TCO)-coated glass substrate. In this study, we demonstrate that the inter-electrode contact resistance accounts for a considerable portion of the total resistance of a DSSC and its efficiency can be greatly enhanced by welding the interface with a laser. TiO{sub 2} films formed on the TCO-coated glass substrate were irradiated with a pulsed ultraviolet laser beam at 355 nm; this transmits through the TCO and glass but is strongly absorbed by TiO{sub 2}. Electron microscopy analysis and impedance measurements showed that a thin continuous TiO{sub 2} layer is formed at the interface as a result of the local melting of TiO{sub 2} nanoparticles and this layer completely bridges the gap between the two electrodes, improving the current flow with a reduced contact resistance. We were able to improve the efficiency by 35-65% with this process. DSSCs fabricated using a homemade TiO{sub 2} paste revealed an efficiency improvement from {eta} = 3.3% to 5.4%, and an increase from 8.2% to 11.2% was achieved with the TiO{sub 2} electrodes made from a commercial paste.

  14. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  15. Measuring the residual stress of transparent conductive oxide films on PET by the double-beam shadow Moiré interferometer

    Science.gov (United States)

    Chen, Hsi-Chao; Huang, Kuo-Ting; Lo, Yen-Ming; Chiu, Hsuan-Yi; Chen, Guan-Jhen

    2011-09-01

    The purpose of this research was to construct a measurement system which can fast and accurately analyze the residual stress of the flexible electronics. The transparent conductive oxide (TCO) films, tin-doped indium oxide (ITO), were deposited by radio frequency (RF) magnetron sputtering using corresponding oxide targets on PET substrate. As we know that the shadow Moiré interferometry is a useable way to measure the large deformation. So we set up a double beam shadow Moiré interferometer to measure and analyze the residual stress of TCO films on PET. The feature was to develop a mathematical model and combine the image processing software. By the LabVIEW graphical software, we could measure the distance which is between the left and right fringe on the pattern to solve the curvature of deformed surface. Hence, the residual stress could calculate by the Stoney correction formula for the flexible electronics. By combining phase shifting method with shadow Moiré, the measurement resolution and accuracy have been greatly improved. We also had done the error analysis for the system whose relative error could be about 2%. Therefore, shadow Moiré interferometer is a non-destructive, fast, and simple system for the residual stress on TCO/PET films.

  16. Color transparency

    International Nuclear Information System (INIS)

    Pire, B.; Ralston, J.P.

    1991-01-01

    This paper reviews the physics of color transparency and the unexpected energy dependence of recent measurements of high-energy fixed-angle elastic scattering in nuclear targets. The authors point out advantages of using transparency as a tool, introducing two concepts - spin and flavor flow filtering - that may be studied with nuclear targets. The special case of electroproduction is also considered

  17. Physical properties of electrically conductive Sb-doped SnO2 transparent electrodes by thermal annealing dependent structural changes for photovoltaic applications

    International Nuclear Information System (INIS)

    Leem, J.W.; Yu, J.S.

    2011-01-01

    Highlights: · The physical properties of sputtered Sb-doped SnO 2 after annealing were studied. · The figure of merit was estimated from the integral PFD and sheet resistance. · The characteristics of Sb-doped SnO 2 films were optimized by the figure of merit. · An optimized Sb-doped SnO 2 layer is promising for high efficiency photovoltaic cells. - Abstract: We have investigated the optical and electrical characteristics of antimony (Sb)-doped tin oxide (SnO 2 ) films with modified structures by thermal annealing as a transparent conductive electrode. The structural properties were analyzed from the relative void % by spectroscopic ellipsometry as well as the scanning electron microscopy images and X-ray diffraction patterns. As the annealing temperature was raised, Sb-doped SnO 2 films exhibited a slightly enhanced crystallinity with the increase of the grain size from 17.1 nm at 500 deg. C to 34.3 nm at 700 deg. C. Furthermore, the refractive index and extinction coefficient gradually decreased due to the increase in the relative void % within the film during the annealing. The resistivity decreased to 8.2 x 10 -3 Ω cm at 500 deg. C, but it increased rapidly at 700 deg. C. After thermal annealing, the optical transmittance was significantly increased. For photovoltaic applications, the photonic flux density and the figure of merit over the entire solar spectrum were obtained, indicating the highest values of 5.4 x 10 14 cm -2 s -1 nm -1 at 1.85 eV after annealing at 700 deg. C and 340.1 μA cm -2 Ω -1 at 500 deg. C, respectively.

  18. Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11–22) GaN-based light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki-Wook; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon, 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, 85, Munmu-ro, Goesan-eup, Goesan-gun, Chungbuk, 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of)

    2016-05-05

    We have grown thin films of nonpolar m-plane (10-10) ZnO on a semipolar (11–22) GaN template by atomic layer deposition (ALD) at low growth temperatures (<200 °C). The surface morphology of the ZnO film is found to be an arrowhead-like structure, which is a typical surface structure of the semipolar (11–22) GaN films. On increasing the growth temperature of the ZnO films, the concentration and mobility of the charge carriers in the ZnO film are increased. However, the optical transmittance decreases with an increase in the growth temperature. Based on these results, we have fabricated semipolar (11–22) GaN-based light-emitting diodes (LEDs) with nonpolar m-plane ZnO film as a transparent conductive oxide (TCO) to improve the light extraction efficiency. In spite of a decrease in the optical transmittance, the operation voltage of semipolar (11–22) GaN-based LEDs is found to decrease with an increase in the growth temperature, which might be due to the improvements in the electrical properties and current spreading effect, resulting in an increase in the optical output power. - Highlights: • Polarity control of ZnO film grown in m-/c-sapphire and semipolar GaN template. • Achievement of high quality nonpolar m-plane ZnO flims on semipolar (11–22) GaN template. • The simultaneous improvements of carrier concentration and mobility in the nonpolar ZnO TCO flims. • Nonpolar ZnO TCO increases current spreading length and light output power of semipolar GaN-LED.

  19. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  20. Controlled Al3+ Incorporation in the ZnO Lattice at 188 °C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides

    Directory of Open Access Journals (Sweden)

    Salvatore Sanzaro

    2016-06-01

    Full Text Available Transparent conductive oxide (TCO layers, to be implemented in photo-anodes for dye-sensitized solar cells (DSCs, were prepared by co-deposition of ZnO and Al using pulsed-direct current (DC-magnetron reactive sputtering processes. The films were deposited at low deposition temperatures (RT-188 °C and at fixed working pressure (1.4 Pa using soft power loading conditions to avoid intrinsic extra-heating. To compensate the layer stoichiometry, O2 was selectively injected close to the sample in a small percentage (Ar:O2 = 69 sccm:2 sccm. We expressly applied the deposition temperature as a controlling parameter to tune the incorporation of the Al3+ species in the targeted position inside the ZnO lattice. With this method, Aluminum-doped Zinc Oxide films (ZnO:Al were grown following the typical wurtzite structure, as demonstrated by X-ray Diffraction analyses. A combination of micro-Raman, X-ray photoelectron spectroscopy (XPS and spectroscopic ellipsometry (SE analyses has shown that the incorporated host-atoms are Al3+ species in Zn2+ substitutional position; their amount increases following a direct monotonic trend with the deposition temperature. Correspondently, the c-axis strain into the layer decreases due to the progressive ordering of the lattice structure and reducing clustering phenomena. The maximum average Al content inside the film was ~2%, as measured by energy dispersive X-ray (EDX spectroscopy, with a uniform distribution of the dopant species along the layer thickness traced by depth-profile XPS analyses. The optimised ZnO:Al layer, deposited at a rate of ~7 nm/min, exhibits high transmittance in the visible range (~85% and low resistivity values (~13 mΩ × cm. The material therefore fulfils all the requirements to be candidate as TCO for low-cost DSCs on flexible substrates for large area technologies.

  1. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    Science.gov (United States)

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  2. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  3. On the solid phase crystallization of In{sub 2}O{sub 3}:H transparent conductive oxide films prepared by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Macco, Bart; Verheijen, Marcel A.; Black, Lachlan E.; Melskens, J. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Barcones, Beatriz [NanoLab@TU/e, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Kessels, Wilhelmus M. M., E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Solliance Solar Research, High Tech Campus 5, 5656 AE Eindhoven (Netherlands)

    2016-08-28

    Hydrogen-doped indium oxide (In{sub 2}O{sub 3}:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In{sub 2}O{sub 3}:H. This process consists of ALD of In{sub 2}O{sub 3}:H films at 100 °C, followed by a solid phase crystallization step at 150–200 °C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The relatively high hydrogen content of 4.2 at. % in these films is thought to cause the absence of additional nucleation, thereby rendering the final grain size and optoelectronic properties solely dependent on the density of embedded crystallites. The temperature-dependent grain growth rate has been determined, from which an activation energy of (1.39 ± 0.04) eV has been extracted. Finally, on the basis of the observed crystallization mechanism, a simple model to fully describe the crystallization process has been developed. This model has been validated with a numerical implementation thereof, which accurately predicts the observed temperature-dependent crystallization behaviour.

  4. Interface Study of ITO/ZnO and ITO/SnO2 Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Tingliang Liu

    2013-01-01

    Full Text Available Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS and X-ray Photoelectron Spectroscopy (XPS, and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV, which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

  5. The role of transparent conducting oxides in metal organic chemical vapour deposition of CdTe/CdS Photovoltaic solar cells

    International Nuclear Information System (INIS)

    Irvine, S.J.C.; Lamb, D.A.; Barrioz, V.; Clayton, A.J.; Brooks, W.S.M.; Rugen-Hankey, S.; Kartopu, G.

    2011-01-01

    A systematic study is made between the relationship of Cd 0.9 Zn 0.1 S/CdTe photovoltaic (PV) device properties for three different commercial transparent conducting oxide (TCO) materials and some experimental CdO to determine the role of the TCO in device performance. The resistance contribution from the TCO was measured after depositing the gold contact architectures directly onto the TCOs. These were compared with the Cd 0.9 Zn 0.1 S/CdTe device properties using the same contact arrangements. Series resistance for the commercial TCOs correlated with their sheet resistance and gave good agreement with the PV device series resistance for the indium tin oxide (ITO) and fluorine doped tin oxide (FTO) 15 Ω/Sq. superstrates. The devices on the thicker FTO 7 Ω/sq superstrates were dominated by a low shunt resistance, which was attributed to the rough surface morphology causing micro-shorts. The device layers on the CdO substrate delaminated but devices were successfully made for ultra-thin CdTe (0.8 μm thick) and compared favourably with the comparable device on ITO. From the measurements on these TCOs it was possible to deduce the back contact resistance and gave an average value of 2 Ω.cm 2 . The correlation of fill factor with series resistance has been compared with the predictions of a 1-D device model and shows excellent agreement. For high efficiency devices the combined series resistance from the TCO and back contact need to be less than 1 Ω.cm 2 .

  6. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  7. P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2016-04-30

    Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

  8. P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    International Nuclear Information System (INIS)

    Komatsu, Shojiro; Nagata, Takahiro; Chikyo, Toyohiro; Sato, Yuhei; Watanabe, Takayuki; Hirano, Daisuke; Takizawa, Takeo; Nakamura, Katsumitsu; Hashimoto, Takuya; Nakamura, Takuya; Koga, Kazunori; Shiratani, Masaharu; Yamamoto, Atsushi

    2009-01-01

    A heterojunction of p-type sp 3 -bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B 2 H 6 + NH 3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm -2 , at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp 3 -bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.

  9. Random resistor network model of minimal conductivity in graphene.

    Science.gov (United States)

    Cheianov, Vadim V; Fal'ko, Vladimir I; Altshuler, Boris L; Aleiner, Igor L

    2007-10-26

    Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

  10. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Directory of Open Access Journals (Sweden)

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  11. Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

    International Nuclear Information System (INIS)

    Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

    2016-01-01

    We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

  12. Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

    International Nuclear Information System (INIS)

    Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

    2016-01-01

    Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

  13. P type porous silicon resistivity and carrier transport

    International Nuclear Information System (INIS)

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-01-01

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P % ) was found to be the major contributor to the PS resistivity (ρ PS ). ρ PS increases exponentially with P % . Values of ρ PS as high as 1 × 10 9 Ω cm at room temperature were obtained once P % exceeds 60%. ρ PS was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ PS . Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P % lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P % overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices

  14. Convergence of valence bands for high thermoelectric performance for p-type InN

    International Nuclear Information System (INIS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-01-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  15. Public Transparency

    OpenAIRE

    UNCTAD; World Bank

    2018-01-01

    This note provides guidance on the type of information about agricultural investments that investors and governments can make publicly available. Transparency about certain aspects of investments can improve relations between investors and communities, enable external stakeholders to hold investors to commitments, and improve investors’ public image. Although some information should be kep...

  16. Transparency International

    NARCIS (Netherlands)

    Hulten, van M. (Michel)

    2009-01-01

    Established in 1993, Transparency International (TI) defines itself as “the global civil society organization leading the fight against corruption, that brings people together in a powerful worldwide coalition to end the devastating impact of corruption on men, women and children around the

  17. Color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1993-01-01

    The anomously large transmission of nucleons through a nucleus following a hard collision is explored. This effect, known as color transparency, is believed to be a prediction of QCD. The necessary conditions for its occurrence and the effects that must be included a realistic calculation are discussed

  18. Color transparency

    International Nuclear Information System (INIS)

    Miller, G.A.

    1993-01-01

    Imagine shooting a beam of protons of high momentum P through an atomic nucleus. Usually the nuclear interactions prevent the particles from emerging with momentum ∼P. Further, the angular distribution of elastically scattered protons is close to the optical diffraction pattern produced by a black disk. Thus the nucleus acts as a black disk and is not transparent. However, certain high momentum transfer reactions in which a proton is knocked out of the nucleus may be completely different. Suppose that the high momentum transfer process leads to the formation of a small-size color singlet wavepacket that is ejected from the nucleus. The effects of gluons emitted by color singlet systems of closely separated quarks and gluons tend to cancel. Thus the wavepacket-nuclear interactions are suppressed, the nucleus becomes transparant and one says that color transparency CT occurs. The observation of CT also requires that the wavepacket not expand very much while it moves through the nucleus. Simple quantum mechanical formulations can assess this expansion. The creation of a small-sized wavepacket is expected in asymptotic perturbative effects. The author reviews the few experimental attempts to observe color transparency in nuclear (e,e'p) and (p,pp) reactions and interpret the data and their implications

  19. Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance

    Czech Academy of Sciences Publication Activity Database

    Šímová, V.; Vlček, J.; Zuzjaková, Š.; Houška, J.; Shen, Y.; Jiang, J. C.; Meletis, E. I.; Peřina, Vratislav

    2018-01-01

    Roč. 653, č. 5 (2018), s. 333-340 ISSN 0040-6090 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : Hf-B-Si-C-N films * pulsed reactive magnetron sputtering * electrical conductivitiy * optical transparency * high-temperature oxidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.879, year: 2016

  20. Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

    Science.gov (United States)

    Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

    2015-01-01

    We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

  1. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica

    2017-03-30

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  2. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica; De Wolf, Stefaan; Woods-Robinson, Rachel; Ager, Joel W.; Ballif, Christophe

    2017-01-01

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  3. On Allosteric Modulation of P-Type Cu+-ATPases

    DEFF Research Database (Denmark)

    Mattle, Daniel; Sitsel, Oleg; Autzen, Henriette Elisabeth

    2013-01-01

    P-type ATPases perform active transport of various compounds across biological membranes and are crucial for ion homeostasis and the asymmetric composition of lipid bilayers. Although their functional cycle share principles of phosphoenzyme intermediates, P-type ATPases also show subclass...... of intramembranous Cu+ binding, and we suggest an alternative role for the proposed second site in copper translocation and proton exchange. The class-specific features demonstrate that topological diversity in P-type ATPases may tune a general energy coupling scheme to the translocation of compounds with remarkably...

  4. P-type diamond stripper foils for tandem ion accelerators

    International Nuclear Information System (INIS)

    Phelps, A.W.; Koba, R.

    1989-01-01

    The authors are developing a stripper foil composed of a p-type diamond membrane. This diamond stripper foil should have a significantly longer lifetime than any conventional stripper foil material. To be useful for stripper foils, the boron-doped blue diamond films must be thinner than 0.8 μm and pore-free. Two methods are compared for their ability to achieve a high nucleation areal density on a W substrate. Some W substrates were first coated with think layer of boron (≤20 nm) in order to enhance nucleation. Other W substrates were scratched with submicron diamond particles. A schematic diagram of the stripper foil is shown. Stripper foils were created by etching away the central area of W substrates. The diamond membrane was then supported by an annulus of W. Tungsten was selected as a ring-support material because of its high electrical and thermal conductivity, relatively low thermal expansion, and proven suitability as a substrate for diamond CVD. Warping or fracture of the diamond film after substrate etch-back was investigated

  5. Electronic processes in uniaxially stressed p-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  6. On the feasibility of p-type Ga2O3

    Science.gov (United States)

    Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico

    2018-01-01

    We investigate the various cation substitutional dopants in Ga2O3 for the possibility of p-type conductivity using density functional theory. Our calculations include both standard density functional theory and hybrid functional calculations. We demonstrate that all the investigated dopants result in deep acceptor levels, not able to contribute to the p-type conductivity of Ga2O3. In light of these results, we compare our findings with other wide bandgap oxides and reexamine previous experiments on zinc doping in Ga2O3.

  7. Ohmic Contacts to P-Type SiC

    National Research Council Canada - National Science Library

    Crofton, John

    2000-01-01

    Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

  8. A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

    Science.gov (United States)

    Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

    2017-04-01

    This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

  9. Irradiation and annealing of p-type silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  10. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    Science.gov (United States)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  11. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    International Nuclear Information System (INIS)

    Zhao Yu; Fan Bingfeng; Chen Yiting; Zhuo Yi; Wang Gang; Pang Zhoujun; Liu Zhen

    2016-01-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO 2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO 2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. (paper)

  12. Formation of p-type ZnO thin film through co-implantation

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  13. High Temperature Transparent Furnace Development

    Science.gov (United States)

    Bates, Stephen C.

    1997-01-01

    This report describes the use of novel techniques for heat containment that could be used to build a high temperature transparent furnace. The primary objective of the work was to experimentally demonstrate transparent furnace operation at 1200 C. Secondary objectives were to understand furnace operation and furnace component specification to enable the design and construction of a low power prototype furnace for delivery to NASA in a follow-up project. The basic approach of the research was to couple high temperature component design with simple concept demonstration experiments that modify a commercially available transparent furnace rated at lower temperature. A detailed energy balance of the operating transparent furnace was performed, calculating heat losses through the furnace components as a result of conduction, radiation, and convection. The transparent furnace shells and furnace components were redesigned to permit furnace operation at at least 1200 C. Techniques were developed that are expected to lead to significantly improved heat containment compared with current transparent furnaces. The design of a thermal profile in a multizone high temperature transparent furnace design was also addressed. Experiments were performed to verify the energy balance analysis, to demonstrate some of the major furnace improvement techniques developed, and to demonstrate the overall feasibility of a high temperature transparent furnace. The important objective of the research was achieved: to demonstrate the feasibi