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Sample records for p-type si surfaces

  1. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Institute of Scientific and Technical Information of China (English)

    韩超; 张玉明; 宋庆文; 汤晓燕; 张义门; 郭辉; 王悦湖

    2015-01-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.%Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10−6Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000◦C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

  2. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Science.gov (United States)

    Han, Chao; Zhang, Yu-Ming; Song, Qing-Wen; Tang, Xiao-Yan; Zhang, Yi-Men; Guo, Hui; Wang, Yue-Hu

    2015-11-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10-6 Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 °C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing. Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).

  3. Spectroscopic characterization of a single dangling bond on a bare Si(100)- c ( 4 × 2 ) surface for n - and p -type doping

    KAUST Repository

    Mantega, M.

    2012-07-19

    We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4×2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom passivates one of the dimer dangling bonds responsible for the surface one-dimensional electronic structure. This leaves a second dangling at the reacted surface dimer which breaks the surface periodicity. We consider two possible H adsorption configurations for both the neutral and the doped situation (n- and p-type). In the case of n-doping we find that the single dangling bond state is doubly occupied and the most stable configuration is that with H bonded to the bottom Si atom of the surface dimer. In the case of p-doping the dangling bond is instead empty and the configuration with the H attached to the top atom of the dimer is the most stable. Importantly the two configurations have different scattering properties and phase shift fingerprints. This might open up interesting perspectives for fabricating a switching device by tuning the doping level or by locally charging the single dangling bond state. © 2012 American Physical Society.

  4. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

    Science.gov (United States)

    Saint-Cast, Pierre; Kania, Daniel; Hofmann, Marc; Benick, Jan; Rentsch, Jochen; Preu, Ralf

    2009-10-01

    Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the p-type silicon interface, resulting in very effective field-effect passivation. This paper presents highly negatively charged (Qox=-2.1×1012 cm-2) aluminum oxide layers produced using an inline plasma-enhanced chemical vapor deposition system, leading to very low effective recombination velocities (˜10 cm s-1) on low-resistivity p-type substrates. A minimum static deposition rate (100 nm min-1) at least one order of magnitude higher than atomic layer deposition was achieved on a large carrier surfaces (˜1 m2) without significantly reducing the resultant passivation quality.

  5. Recycling of p-type mc-si Top Cuts into p-type mono c-Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Bronsveld, P.C.P.; Manshanden, P.; Lenzmann, F.O. [ECN Solar Energy, Westerduinweg 3, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Gjerstad, O. [Si Pro Holding AS, Ornesveien 3, P.O. Box 37, 8161, Glomfjord (Norway); Oevrelid, E.J. [SINTEF, Alfred Getz Vei 2, 7465, Trondheim (Norway)

    2013-07-01

    Solar cell results and material analysis are presented of 2 p-type Czochralski (Cz) ingots pulled from a charge consisting of 100% and 50% recycled multicrystalline silicon top cuts. The top cuts were pre-cleaned with a dedicated low energy consuming technology. No structure loss was observed in the bodies of the ingots. The performance of solar cells made from the 100% recycled Si ingot decreases towards the seed end of the ingot, which could be related to a non-optimal pulling process. Solar cells from the tail end of this ingot and from the 50% recycled Si ingot demonstrated an average solar cell efficiency of 18.6%. This is only 0.1% absolute lower than the efficiency of higher resistivity reference solar cells from commercially available wafers that were co-processed.

  6. Nanoscopic oxidation of p-type and un-doped Si (100) surfaces using un-externally biased atomic force microscope tips (AFM) in the presence of selected organic solvents

    Science.gov (United States)

    McCausland, Jeffrey; Withanage, Sajeevi; Mallik, Robert; Lyuksyutov, Sergei

    A conductive un-biased AFM tip oscillating above p-type or un-doped Si (100) treated with toluene, butan-2-ol, and propan-2-ol creates nanostructures ranging in height from 1-100 nm. The tip was oscillated in ambient conditions (30-70% Rel. Humidity) at frequencies in the 102 kHz range. It was repeatable with various concentrations of solvent in aqueous solution. It is suggested that mechanical oscillations of the AFM tip polarizes the solvent molecules deposited on the surface resulting in electron transfer from the tip to the surface followed by feature formation. This process effectively creates an electrochemical cell at the microscopic level and the miscibility of the solvents is the key to enabling the process. Species which ionize during the process may be consumed in irreversible reactions whereas the alcohols act as catalysts and are not consumed. The influence of boron defects in the Si substrates is also discussed. It appears that the observed oxidation is different from all other similar reported phenomena including local anodic oxidation, and chemo-mechanical lithographic techniques utilizing AFM.

  7. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

    Directory of Open Access Journals (Sweden)

    Chun-You Wei

    2013-11-01

    Full Text Available Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

  8. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  9. Optical and Electrical Effects of p-type μc-SiOx:H in Thin-Film Silicon Solar Cells on Various Front Textures

    Directory of Open Access Journals (Sweden)

    Chao Zhang

    2014-01-01

    Full Text Available p-type hydrogenated microcrystalline silicon oxide (µc-SiOx:H was developed and implemented as a contact layer in hydrogenated amorphous silicon (a-Si:H single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al, and tunable refractive index make p-type µc-SiOx:H a promising alternative to the commonly used p-type hydrogenated microcrystalline silicon (µc-Si:H contact layers. In this work, p-type µc-SiOx:H layers were fabricated with a conductivity of up to 10−2 S/cm and a Raman crystallinity of above 60%. Furthermore, we present p-type µc-SiOx:H films with a broad range of optical properties (2.1 eV < band gap E04<2.8 eV and 1.6 < refractive index n<2.6. These properties can be tuned by adapting deposition parameters, for example, the CO2/SiH4 deposition gas ratio. A conversion efficiency improvement of a-Si:H solar cells is achieved by applying p-type µc-SiOx:H contact layer compared to the standard p-type µc-Si:H contact layer. As another aspect, the influence of the front side texture on a-Si:H p-i-n solar cells with different p-type contact layers, µc-Si:H and µc-SiOx:H, is investigated. Furthermore, we discuss the correlation between the decrease of Voc and the cell surface area derived from AFM measurements.

  10. Lateral photovoltaic effect in p-type silicon induced by surface states

    Science.gov (United States)

    Huang, Xu; Mei, Chunlian; Gan, Zhikai; Zhou, Peiqi; Wang, Hui

    2017-03-01

    A colossal lateral photovoltaic effect (LPE) was observed at the surface of p-type silicon, which differs from the conventional thought that a large LPE is only observed in Schottky junctions and PN junctions consisting of several layers with different conductivities. It shows a high sensitivity of 499.24 mV/mm and an ultra-broadband spectral responsivity (from 405 nm to 980 nm) at room temperature, which makes it an attractive candidate for near-infrared detection. We propose that this phenomenon can be understood by considering the surface band bending near the surface of p-Si induced by charged surface states. The energy band diagrams of the samples are shown based on X-ray photoelectron spectroscopy suggesting the correlation between the LPE and surface band bending. The conjectures are validated by changing the surface states of p-type silicon using Ni nano-films. These findings reveal a generation mechanism of the LPE and may lead to p-Si based, broadband-responsivity, low-cost, and high-precision optical and optoelectronic applications.

  11. Boric acid solution concentration influencing p-type emitter formation in n-type crystalline Si solar cells

    Science.gov (United States)

    Singha, Bandana; Singh Solanki, Chetan

    2016-09-01

    Boric acid (BA) is a spin on dopant (BSoD) source which is used to form p+ emitters in n-type c-Si solar cells. High purity boric acid powder (99.99% pure) when mixed with deionized (DI) water can result in high quality p-type emitter with less amount of surface defects. In this work, we have used different concentrations of boric acid solution concentrations to fabricate p-type emitters with sheet resistance values < 90 Ω/□. The corresponding junction depths for the same are less than 500 nm as measured by SIMS analysis. Boron rich layer (BRL), which is considered as detrimental in emitter performance is found to be minimal for BA solution concentration less than 2% and hence useful for p-type emitter formation.

  12. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  13. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  14. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

    Directory of Open Access Journals (Sweden)

    Hong Yu

    2009-04-01

    Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

  15. Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

    2015-01-14

    Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

  16. Lifetime and DLTS studies of interstitial Fe in p-type Si

    Energy Technology Data Exchange (ETDEWEB)

    Syre, M.; Holt, A. [Institute for Energy Technology (IFE), Solar Energy Department, P.O. Box 40, 2027 Kjeller (Norway); Monakov, E. [University of Oslo (UiO), Department of Physics, Blindern P.O. Box 1048, 0316 Oslo (Norway); Institute for Energy Technology (IFE), Solar Energy Department, P.O. Box 40, 2027 Kjeller (Norway); Svensson, B.G. [University of Oslo (UiO), Department of Physics, Blindern P.O. Box 1048, 0316 Oslo (Norway)

    2011-03-15

    Fe is one of the most prominent metallic impurities in solar-grade Si. In this work we have investigated the kinetics of in-diffusion and formation of the interstitial fraction (Fe{sub i}). P-type Cz-Si with a resistivity of 10 {omega}-cm has been intentionally contaminated with Fe by in-diffusion from a surface layer of FeCl{sub 3} at 700 C followed by cooling with a rate of {proportional_to} 3.3 K/s. The concentration of Fe{sub i} has been measured both by microwave photo conductance decay ({mu}-PCD) and deep level transient spectroscopy (DLTS). In the {mu}-PCD measurements, the Fe{sub i} concentration has been determined using the ef- fect of light-induced splitting of the iron-boron pairs (FeB), while in the DLTS measurements Fe{sub i} has been monitored by the donor electronic state at 0.43 eV above the valence band. We have observed a linear dependence between the minority carrier lifetime ({tau}) and the inverse Fe{sub i} concentration. This confirms Fe{sub i} as the dominating recombination centre. In the present investigations we use a material relevant for solar cells with a resistivity of 10 {omega}-cm. We have found that the concentration of interstitial iron decreases with increasing time for in-diffusion of Fe, provided identical cooling condition. This decreasing con- centration of Fe{sub i} is believed to be due to formation of more iron precipitates that serve as sinks for fast diffusing Fe{sub i}. A high temperature anneal at 1000 C for 1 minute followed by fast cooling ({proportional_to} 33 K/s) results in dissolution of the precipitates and freezing Fe into interstitial positions, where the concentration of Fe{sub i} increases with increasing in-diffusion time. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Phonon bottleneck in p-type Ge/Si quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yakimov, A. I., E-mail: yakimov@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Kirienko, V. V.; Armbrister, V. A. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk (Russian Federation); Bloshkin, A. A.; Dvurechenskii, A. V. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation)

    2015-11-23

    We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.

  18. P-type poly-Si prepared by low-temperature aluminum-induced crystallization and doping for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Yasuhiro; Yu, Zhenrui; Morales-Acevedo, Arturo [CINVESTAV-IPN, Mexico, D.F. (Mexico)

    2000-07-01

    P-type poly-Si thin films prepared by low temperature aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thickness were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550 Celsius degrees. XRD, SIMS, and Hall effect measurements were carried out to characterize the annealed Al could be crystallized at temperature as low as 300 Celsius degrees in 60 minutes. This material has high carrier concentration as well as high Hall mobility and can be used as a p-layer of seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process. [Spanish] Se informa sobre la preparacion de peliculas delgadas tipo P y Poli-Si mediante la cristalizacion inducida de aluminio a baja temperatura y el dopado. El material inicial era de boro dopado y a-Si:H preparado PECVD sobre substratos de vidrio. Se evaporaron capas de aluminio de diferente espesor sobre una superficie de a-Si:H y se llevo a cabo un destemplado termico convencional a temperaturas que varian entre 300 y 500 grados Celsius. Se llevaron a cabo mediciones de XRB, SIMS y del efecto Hall para caracterizar el aluminio destemplado para que pudiera ser cristalizado a temperaturas tan bajas como 300 grados Celsius en 60 minutos. Este material tiene una alta concentracion portadora asi como una alta movilidad Hall y puede usarse como una capa de semilla para celdas solares de pelicula delgada Poli-Si. La tecnica reportada aqui es compatible con el proceso PECVD.

  19. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  20. TSC measurements on proton-irradiated p-type Si-sensors

    Energy Technology Data Exchange (ETDEWEB)

    Donegani, Elena; Fretwurst, Eckhart; Garutti, Erika; Junkes, Alexandra [University of Hamburg (Germany)

    2016-07-01

    Thin n{sup +}p Si sensors are potential candidates for coping with neutron equivalent fluences up to 2.10{sup 16} n{sub eq}/cm{sup 2} and an ionizing dose in the order of a few MGy, which are expected e.g. for the HL-LHC upgrade. The aim of the present work is to provide experimental data on radiation-induced defects in order to: firstly, get a deeper understanding of the properties of hadron induced defects, and secondly develop a radiation damage model based on microscopic measurements. Therefore, the outcomes of Thermally Stimulated Current measurements on 200 μm thick Float-Zone (FZ) and Magnetic Czochralski (MCz) diodes will be shown, as a results of irradiation with 23 MeV protons and isothermal annealing. The samples were irradiated in the fluence range (0.3-1).10{sup 14} n{sub eq}/cm{sup 2}, so that the maximal temperature at which the TSC signal is still sharply distinguishable from the dark current is 200 K. In particular, special focus will be given to the defect introduction rate and to the issue of boron removal in p-type silicon. Annealing studies allow to distinguish which defects mainly contribute to the leakage current and which to the space charge, and thus correlate microscopic defects properties with macroscopic sensor properties.

  1. Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

    Science.gov (United States)

    Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

    2017-03-17

    We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

  2. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

    Science.gov (United States)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-28

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  3. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    Science.gov (United States)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  4. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

    Energy Technology Data Exchange (ETDEWEB)

    Agostinelli, G.; Delabie, A.; Dekkers, H.F.W.; De Wolf, S.; Beaucarne, G. [IMEC vzw, Kapeldreef 75, Leuven (Belgium); Vitanov, P.; Alexieva, Z. [CL SENES, Sofia (Bulgaria)

    2006-11-23

    Surface recombination velocities as low as 10cm/s have been obtained by treated atomic layer deposition (ALD) of Al{sub 2}O{sub 3} layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al{sub 2}O{sub 3} are presented, too. With this process, surface recombination velocities of 500-1000cm/s have been attained on mc-Si wafers. (author)

  5. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  6. Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jie, E-mail: j.cui@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia); Grant, Nicholas [Centre for Sustainable Energy Systems, Australian National University, Canberra, A.C.T. 0200 (Australia); Lennon, Alison [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia)

    2014-12-30

    Highlights: • The surface passivation by anodic SiO{sub 2} formed by light-induced anodisation is investigated. • The anodic SiO{sub 2} grows lower temperatures with shorter growth times. After annealing in oxygen and then forming gas the effective minority carrier lifetime is increased to 150 μs. • It shows a very low positive Q{sub eff} of 3.4 × 10{sup 11} cm{sup −2}, a moderate D{sub it} of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. • It has a very low leakage current density suggesting its application in solar cell as a functional dielectric. - Abstract: Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO{sub 2}) was investigated. The anodic SiO{sub 2} was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3–5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/□ emitter and a LIA anodic SiO{sub 2} formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance–voltage measurements demonstrated a very low positive charge density of 3.4 × 10{sup 11} cm{sup −2} and a moderate density of interface states of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. This corresponded to a silicon surface recombination velocity of 62 cm s{sup −1}, which is comparable with values reported for other anodic SiO{sub 2} films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 × 10{sup −10} and 1.6 × 10{sup −9} A cm{sup −2} at 1 and −1 V, respectively, was measured for LIA SiO{sub 2} suggesting its potential application as insulation layer in

  7. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

    OpenAIRE

    Chun-You Wei; Chu-Hsuan Lin; Hao-Tse Hsiao; Po-Chuan Yang; Chih-Ming Wang; Yen-Chih Pan

    2013-01-01

    Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency ...

  8. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Directory of Open Access Journals (Sweden)

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  9. DLTS of p-type Czochralski Si wafers containing processing-induced macropores

    Science.gov (United States)

    Simoen, E.; Depauw, V.; Gordon, I.; Poortmans, J.

    2012-01-01

    The deep levels present in p-type Czochralski silicon with processing-induced macropores in the depletion region have been studied by the deep-level transient (DLT) spectroscopy technique. It is shown that a broad band is present for a bias pulse close to the interface with the Al Schottky contact, which exhibits anomalously slow hole capture and is ascribed to the internal interface states of the macropores. For depths beyond the pore region, other deep levels, associated with point defects—possibly metal contamination during the high-temperature annealing step under H2 ambient--have been observed. The impact of the observed defects on the lifetime of thin-film solar cells, fabricated using macropore-based layer transfer is discussed. Finally, it is shown that the presence of pores in the depletion region, which also affects the DLT-spectrum, alters the capacitance-voltage characteristics.

  10. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Minden 11800 Penang (Malaysia)

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  11. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Science.gov (United States)

    López, G.; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiCx/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J-V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  12. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    López, G., E-mail: gema.lopez@upc.edu; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    Highlights: • We use laser doping technique to create highly-doped regions. • Dielectric layers are used as both passivating layer and dopant source. • The high quality of the junctions makes laser doping technique using dielectric layers as dopant source suitable for solar cells applications. - Abstract: In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiC{sub x}/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al{sub 2}O{sub 3}) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J–V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  13. Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

    Institute of Scientific and Technical Information of China (English)

    LI Jin-tao; CHEN Song-yan; QI Dong-feng; HUANG Wei; LI Cheng; LAI Hong-kai

    2011-01-01

    The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector (M-QWIP). The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ce0.46 multi-quantum wells (MQWs) is investigated. It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in psendosubstrate increases. The influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 × 6 k-p method. The results show that the Si barrier between 5 nm and 10 nm is optimized to enhance the intersubband absorption in the MQWs.

  14. Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC

    Science.gov (United States)

    Kawahara, Koutarou; Suda, Jun; Pensl, Gerhard; Kimoto, Tsunenobu

    2010-08-01

    The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of the band gap of 4H-SiC by deep level transient spectroscopy. The deep levels are generated by ion implantation. The dominant defects in n-type samples after ion implantation and high-temperature annealing at 1700 °C are IN3 (Z1/2: EC-0.63 eV) and IN9 (EH6/7: EC-1.5 eV) in low-dose-implanted samples, and IN8 (EC-1.2 eV) in high-dose-implanted samples. These defects can remarkably be reduced by thermal oxidation at 1150 °C. In p-type samples, however, IP8 (HK4: EV+1.4 eV) survives and additional defects such as IP4 (HK0: EV+0.72 eV) appear after thermal oxidation in low-dose-implanted samples. In high-dose-implanted p-type samples, three dominant levels, IP5 (HK2: EV+0.85 eV), IP6 (EV+1.0 eV), and IP7 (HK3: EV+1.3 eV), are remarkably reduced by oxidation at 1150 °C. The dominant defect IP4 observed in p-type 4H-SiC after thermal oxidation can be reduced by subsequent annealing in Ar at 1400 °C. These phenomena are explained by a model that excess interstitials are generated at the oxidizing interface, which diffuse into the bulk region.

  15. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    Science.gov (United States)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  16. Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAs an Si

    Energy Technology Data Exchange (ETDEWEB)

    Gaggero-Sager, L. M. [Universidad Autonoma de Zacatecas, Zacatecas (Mexico); M' Peko, J. C.; Perez Alvarez, R. [Universidad de La Habana, Ciudad Habana (Cuba)

    2001-04-01

    Thomas-Fermi calculations of the hole subband structure in two coupled p-type d-doped GaAs and Si quantum wells are carried out as a function of the impurity concentration and the distance l between them. A simple formula is obtained for the potential as a function of these two magnitudes by both types of systems. The numerical results for a double Be-{delta}-doped GaAs (double B-{delta}-doped Si) quantum well show that the energy levels degenerate for l{>=}300 A(l{>=}200 A) for an impurity concentration of 1 x 10{sup 1}3 cm{sup -2}. [Spanish] Presentamos calculos de la estructura de subbandas de huecos, utilizando la aproximacion de Thomas-Fermi para dos pozos cuanticos d-dopados tipo p en GaAs y Si, como funcion de la concentracion de impurezas y de la distancia l entre ambos para los dos tipos de sistemas. Los resultados numericos muestran que para un pozo doble de B-{delta}-dopado GaAs (pozo doble de B-{delta}-dopado Si) con una concentracion de 1 x 10{sup 1}3 cm{sup -2} los niveles estan degenerados para l{>=}300 A(l{>=}200 A).

  17. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    KAUST Repository

    Dolui, Kapildeb

    2013-04-02

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

  18. Chemical etching investigation of polycrystalline p-type 6H-SiC in HF/Na{sub 2}O{sub 2} solutions

    Energy Technology Data Exchange (ETDEWEB)

    Gabouze, Noureddine [Silicon Technology Development Unit (UDTS), 2 Bd Frantz Fanon, B.P. 140, Algiers (Algeria); Keffous, Aissa, E-mail: ngabouze@yahoo.fr [Silicon Technology Development Unit (UDTS), 2 Bd Frantz Fanon, B.P. 140, Algiers (Algeria); Kerdja, Tahar; Belaroussi, Yasmine [Advanced Techniques Development Center (CDTA), Haouch Loukil, Baba Hassen, Algiers (Algeria)

    2009-05-15

    In this work, an experimental study on the chemical etching reaction of polycrystalline p-type 6H-SiC was carried out in HF/Na{sub 2}O{sub 2} solutions. The morphology of the etched surface was examined with varying Na{sub 2}O{sub 2} concentration, etching time, agitation speed and temperature. The surfaces of the etched samples were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) Fourier transform infrared spectroscopy (FT-IR) and photoluminescence. The surface morphology of samples etched in HF/Na{sub 2}O{sub 2} is shown to depend on the solution composition and bath temperature. The investigation of the HF/Na{sub 2}O{sub 2} solutions on 6H-SiC surface shows that as Na{sub 2}O{sub 2} concentration increases, the etch rate increases to reach a maximum value at about 0.5 M and then decreases. A similar behaviour has been observed when temperature of the solution is increased. The maximum etch rate is found for 80 deg. C. In addition, a new polishing etching solution of 6H-SiC has been developed. This result is very interesting since to date no chemical polishing solution has been developed on the material.

  19. Bulk and Surface Event Identification in p-type Germanium Detectors

    CERN Document Server

    Yang, L T; Jia, L P; Jiang, H; Li, J; Lin, F K; Lin, S T; Liu, S K; Ma, J L; Sharma, V; Singh, L; Singh, M K; Soma, A K; Yang, S W; Wang, L; Wang, Q; Wong, H T; Yue, Q; Zhao, W

    2016-01-01

    The p-type point-contact germanium detectors, due to its sub-keV sensitivities and low internal radioactivity background, are demonstrated to be competitive tools for light dark matter WIMPs searches and may have potential applications in neutrino physics. These detectors exhibit anomalous surface behavior, which has been characterized and dealt with in previous analysis. However, the analysis method rely on spectral shape assumptions and must use external calibration sources. In this report, we purpose an improved method, where in situ data could be used as calibration sources. Data from CDEX-1 and TEXONO experiments will be re-examined and the results are shown to be consistent with both analysis.

  20. Diffusion thermopower of a p-type Si/Si{sub 1-x}Ge{sub x} heterostructure at zero magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Huan, Tran Doan [Institute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Rd., Hanoi (Viet Nam); Hai, Nguyen Phuc [Faculty of Engineering, Katholieke University of Leuven, Kasteelpark Arenberg 44, 3001 Heverlee (Leuven) (Belgium)

    2007-06-15

    We calculate the diffusion thermopower of the degenerate two-dimensional hole gas in a p-type Si/Si{sub 1-x}Ge{sub x} lattice mismatched heterostructure at low temperatures and zero magnetic field. The effects of possible scatterings, e.g. remote impurity, alloy disorder, interface roughness, deformation potential, and random piezoelectric on the hole mobility and the diffusion thermopower are examined. Calculated results are well fitted to the experimental data recently reported. In addition, we predict a possibility for the diffusion thermopower to change its sign as the SiGe layer thickness changes, the effect has not been discussed yet. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vidya, E-mail: vj1510@yahoo.com

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

  2. Electroless deposition of NiWB alloy on p-type Si(1 0 0) for NiSi contact metallization

    Energy Technology Data Exchange (ETDEWEB)

    Duhin, A. [Department of Physical Electronics, Engineer Faculty, Tel-Aviv University, Ramat-Aviv 69978 (Israel)], E-mail: alla.douhin@gmail.com; Sverdlov, Y. [Department of Physical Electronics, Engineer Faculty, Tel-Aviv University, Ramat-Aviv 69978 (Israel); Feldman, Y. [Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100 (Israel); Shacham-Diamand, Y. [Department of Physical Electronics, Engineer Faculty, Tel-Aviv University, Ramat-Aviv 69978 (Israel)

    2009-10-30

    Recently, we have proposed a novel method to form NiSi contacts using electroless plating of Ni-alloys (NiP, NiWP, NiWB) on p-type Si(1 0 0) modified by aminopropyltriethoxysilane (APTS) activated with Pd-citrate [A. Duhin, Y. Sverdlov, Yishay Feldman, Y. Shacham-Diamand, Microelectron. Eng. 84 (2007) 2506]. In this work we focus on NiWB thin films that were formed by this method. Alkali metal free electroless plating was developed using dimethylamine-borane (DMAB) and tungstatic acid (H{sub 2}WO{sub 4}) as a reducing agent and a source of tungsten ions, respectively. Using this method we succeeded to receive relatively high tungsten concentration (maximum value of 19-21 at%) in the electroless deposited NiWB films with good adhesion to the Si-substrate. In this paper, the advantages of using the APTS activated with Pd-citrate for NiWB alloy deposition on the Si substrate is discussed. The chemically deposited NiWB samples were annealed for 1-2 h in vacuum (<10{sup -6} Torr) forming the silicide layer. The annealing temperatures were 650 deg. C for NiWB alloys. X-ray diffraction (XRD) measurement confirmed the presence of NiSi phase after annealing. In addition the WSi{sub 2} phase was formed. The results are reported and summarized.

  3. In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bin, E-mail: chenbinmse@gmail.com; Chen, Jun; Yao, Yuanzhao; Sekiguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Matsuhata, Hirofumi; Okumura, Hajime [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2014-07-28

    Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.

  4. The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

    Directory of Open Access Journals (Sweden)

    A. Tombak

    2015-01-01

    Full Text Available In the current paper, the physical properties and microelectronic parameters of direct current (DC sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

  5. Impact of common metallurgical impurities on ms-Si solar cell efficiency. P-type versus n-type doped ingots

    Energy Technology Data Exchange (ETDEWEB)

    Geerligs, L.J.; Manshanden, P. [ECN Solar Energy, Petten (Netherlands); Solheim, I.; Ovrelid, E.J.; Waernes, A.N. [Sintef materials technology, Trondheim (Norway)

    2006-09-15

    Silicon solar cells based on n-type silicon wafers are less sensitive to carrier lifetime degradation due to several common metal impurities than p-base cells. The theoretical and experimental indications for this have recently received considerable attention. This paper compares p-type and n-type cells purposely contaminated with relatively high levels of impurities, processed by industrial techniques. The impurities considered are Al, Ti, and Fe, which are the dominant impurities in metallurgical silicon and natural quartz. The work also preliminary addresses the question whether the optimal wafer resistivity is the same for n-type as for p-type base mc-Si cells.

  6. Improvement in thermoelectric power factor of mechanically alloyed p-type SiGe by incorporation of TiB2

    Science.gov (United States)

    Ahmad, Sajid; Dubey, K.; Bhattacharya, Shovit; Basu, Ranita; Bhatt, Ranu; Bohra, A. K.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.

    2016-05-01

    Nearly 60% of the world's useful energy is wasted as heat and recovering a fraction of this waste heat by converting it as useful electrical power is an important area of research[1]. Thermoelectric power generators (TEG) are solid state devices which converts heat into electricity. TEG consists of n and p-type thermoelements connected electrically in series and thermally in parallel[2]. Silicon germanium (SiGe) alloy is one of the conventional high temperature thermoelectric materials and is being used in radio-isotopes based thermoelectric power generators for deep space exploration programs.Temperature (T) dependence of thermoelectric (TE) properties of p-type SiGe and p-type SiGe-x wt.%TiB2 (x=6,8,10%) nanocomposite materials has been studied with in the temperature range of 300 K to 1100 K. It is observed that there is an improvement in the power factor (α2/ρ) of SiGe alloy on addition of TiB2 upto 8 wt.% that is mainly due to increase in the Seebeck coefficient (α) and electrical conductivity (σ) of the alloy.

  7. Improvement in thermoelectric power factor of mechanically alloyed p-type SiGe by incorporation of TiB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Sajid, E-mail: sajidahmadiitkgp@gmail.com [Nuclear Research Laboratory, Astrophysical Sciences Division, B.A.R.C., Zakura, Srinagar, Kashmir-190024 (India); Dubey, K. [Barkatullah University, Bhopal–462026 (India); Bhattacharya, Shovit; Basu, Ranita; Bhatt, Ranu; Bohra, A. K.; Singh, Ajay; Aswal, D. K.; Gupta, S. K. [Technical Physics Division, B.A.R.C., Trombay, Mumbai – 400085 (India)

    2016-05-23

    Nearly 60% of the world’s useful energy is wasted as heat and recovering a fraction of this waste heat by converting it as useful electrical power is an important area of research{sup [1]}. Thermoelectric power generators (TEG) are solid state devices which converts heat into electricity. TEG consists of n and p-type thermoelements connected electrically in series and thermally in parallel{sup [2]}. Silicon germanium (SiGe) alloy is one of the conventional high temperature thermoelectric materials and is being used in radio-isotopes based thermoelectric power generators for deep space exploration programs.Temperature (T) dependence of thermoelectric (TE) properties of p-type SiGe and p-type SiGe-x wt.%TiB{sub 2} (x=6,8,10%) nanocomposite materials has been studied with in the temperature range of 300 K to 1100 K. It is observed that there is an improvement in the power factor (α{sup 2}/ρ) of SiGe alloy on addition of TiB{sub 2} upto 8 wt.% that is mainly due to increase in the Seebeck coefficient (α) and electrical conductivity (σ) of the alloy.

  8. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells.

    Science.gov (United States)

    Baek, Seungsin; Lee, Jeong Chul; Lee, Youn-Jung; Iftiquar, Sk Md; Kim, Youngkuk; Park, Jinjoo; Yi, Junsin

    2012-01-18

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels.

  9. Fabrication and electrical characterization of Al/DNA-CTMA/ p-type a-Si:H photodiode based on DNA-CTMA biomaterial

    Science.gov (United States)

    Siva Pratap Reddy, M.; Puneetha, Peddathimula; Lee, Young-Woong; Jeong, Seong-Hoon; Park, Chinho

    2017-01-01

    In this work, a deoxyribonucleic acid-cetyltrimethylammonium chloride (DNA-CTMA) biomaterial based p-type hydrogenated amorphous silicon ( a-Si:H) photodiode (PD) is fabricated and its electrical characteristics are investigated. The Al/DNA-CTMA/ p-type a-Si:H PD parameters are studied using current-voltage ( I-V), capacitancevoltage-frequency ( C-V-f) and conductance-voltage-frequency ( G/ω-V-f) measurements. The barrier height and the ideality factor of the diode are found to be 0.78 eV and 1.9, respectively. The electrical and photoconductivity properties of the diode are analyzed by using dark I-V and transient photocurrent techniques. The C-V-f and G/ω-V-f measurements indicate that the capacitance and conductance of the diode depend on the voltage and frequency, respectively. The experimental results reveal that the decreases in capacitance and the increases in conductance with an increase in frequency can be explained on the basis of interface states ( N SS ). Series resistance ( R S ) measurements are performed on the diode and discussed here. The obtained electrical parameters confirm that the Al/DNA-CTMA/ p-type a-Si:H PD can be used as an optical sensor for the development of commercial applications that are environmentally benign. [Figure not available: see fulltext.

  10. Differentiation of Bulk and Surface Events in p-type Point-Contact Germanium Detectors for Light WIMP Searches

    CERN Document Server

    Li, H B

    2013-01-01

    The p-type point-contact germanium detectors are novel techniques offering kg-scale radiation sensors with sub-keV sensitivities. They have been used for light Dark Matter WIMPs searches and may have potential applications in neutrino physics. There are, however, anomalous surface behaviour which needs to be characterized and understood. We describe the methods and results of a research program whose goals are to identify the bulk and surface events via software pulse shape analysis techniques, and to devise calibration schemes to evaluate the selection efficiency factors. Efficiencies-corrected background spectra from the low-background facility at Kuo-Sheng Neutrino Laboratory are derived.

  11. Reduction of fast surface states on p-type GaAs

    Science.gov (United States)

    Ahrenkiel, R. K.; Wagner, R. S.; Pattillo, S.; Dunlavy, D.; Jervis, T.; Kazmerski, L. L.; Ireland, P. J.

    1982-04-01

    Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.

  12. Optical properties of ZnO nanowire arrays electrodeposited on n- and p-type Si(1 1 1): Effects of thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lupan, O., E-mail: oleg-lupan@chimie-paristech.fr [Laboratoire d' Electrochimie, Chimie des Interfaces et Modelisation pour l' Energie (LECIME), UMR 7575 CNRS, Chimie ParisTech, 11 rue P. et M. Curie, 75231 Paris (France); Pauporte, Th., E-mail: thierry-pauporte@chimie-paristech.fr [Laboratoire d' Electrochimie, Chimie des Interfaces et Modelisation pour l' Energie (LECIME), UMR 7575 CNRS, Chimie ParisTech, 11 rue P. et M. Curie, 75231 Paris (France); Tiginyanu, I.M.; Ursaki, V.V. [Institute of Electronic Engineering and Nanotechnologies, Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau MD-2028 (Moldova, Republic of); Heinrich, H.; Chow, L. [Department of Physics, University of Central Florida, PO Box 162385 Orlando, FL 32816-2385 (United States)

    2011-09-25

    Highlights: > A new template-free electrochemical deposition method for the synthesis of ZnO nanorods/nanowires directly on n- and p-type silicon (Si) substrates. > Improved structural, electrical and optical properties of the ZnO nanowires/p-Si (1 1 1) heterojunction have been demonstrated. > Photodetectors have been fabricated based on the n-ZnO nanowires/p-Si heterojunction obtained by electrodeposition. - Abstract: Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on n-Si(1 1 1) and p-Si(1 1 1). The effects of thermal annealing and type of substrates on the optical properties of ZnO nanowires electroplated on silicon (1 1 1) substrate are reported. We fabricated ZnO nanowires/p-Si structure that exhibits a strong UV photoluminescence emission and a negligible visible emission. This UV photoluminescence emission proves to be strongly influenced by the thermal annealing at 150-800 deg. C. Photo-detectors have been fabricated based on the ZnO nanowires/p-Si heterojunction.

  13. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    Science.gov (United States)

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-09

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).

  14. Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions

    Energy Technology Data Exchange (ETDEWEB)

    Kassamakova, L.; Kakanakov, R. [Inst. of Appl. Phys., Plovdiv (Bulgaria). BAS; Nordell, N.; Savage, S. [Industrial Microelectronics Center, Kista (Sweden); Kakanakova-Georgieva, A.; Marinova, Ts. [Inst. of General and Inorganic Chemistry, BAS, Sofia (Bulgaria)

    1999-07-30

    The electrical and chemical properties of Pd ohmic contacts to p-type 4H-SiC, together with their thermal stability, have been studied in the annealing temperature range 600 - 700 C. The ohmic behaviour of as-deposited and annealed contacts has been checked from I - V characteristics and the contact resistivity has been determined by the linear TLM method in order to determine the electrical properties and the thermal stability. An ohmic behaviour was established after annealing at 600 C, while the lowest contact resistivity 5.5 x 10{sup -5} {omega}cm{sup 2} was obtained at 700 C. The contact structure, before and after annealing, was investigated using X-ray photoelectron spectroscopy depth analysis. As-deposited Pd films form an abrupt and chemically inert Pd/SiC interface. Annealing causes the formation of palladium silicide. After formation at 600 C the contact structure consists of unreacted Pd and Pd{sub 3}Si. During annealing at 700 C. Pd and SiC react completely and a mixture of Pd{sub 3}Si, Pd{sub 2}Si and C in a graphite state is found in the contact layer. The examination of the thermal stability shows that after a 100 h heating at 500 C, only the contacts annealed at 700 C did not suffer from a change in resistivity. This can be explained by a more complete reaction between the Pd contact layer and the SiC substrate at this higher annealing temperature. (orig.)

  15. Enhancement of photocathodic stability of p-type copper(I) oxide electrodes by surface etching treatment

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Fumiaki, E-mail: amano@kitakyu-u.ac.jp [Catalysis Research Center, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810 (Japan); Department of Chemical and Environmental Engineering, The University of Kitakyushu, Kitakyushu 808-0135 (Japan); Ebina, Toshihiro [Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810 (Japan); Ohtani, Bunsho [Catalysis Research Center, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810 (Japan)

    2014-01-01

    The photoelectrochemical properties of electrodeposited p-type copper(I) oxide (Cu{sub 2}O) films were investigated using methyl viologen (MV{sup 2+}) as an electron acceptor. The pristine Cu{sub 2}O films were deactivated during the photocathodic reaction as a result of self-reduction, whereas the (111)-oriented Cu{sub 2}O films treated in an aqueous solution containing hexamethylenetetramine at pH 5 and 90 °C exhibited stable photocurrent for MV{sup 2+} reduction into the cation radical. Scanning electron microscope images showed that the treated films contained smaller crystal grains than untreated ones. X-ray photoelectron spectroscopy revealed that the treatment etched the thin layer of copper(II) oxide from the Cu{sub 2}O polycrystalline surface. Etching of the film surface enhanced the stability and steady-state photocurrent for photocathodic reduction of MV{sup 2+}, suggesting that the crystalline composition and structures exposed on the outermost surface of Cu{sub 2}O polycrystalline films have a considerable influence on the selectivity for the photocathodic reaction over self-reduction. - Highlights: • Photoelectrochemical reduction of methyl viologen by (111)-oriented Cu{sub 2}O thin films • Cu{sub 2}O films are etched using an aqueous solution containing hexamethylenetetramine. • Etching decreases crystal grain size and removes the thin layer of CuO. • Etching enhances the stability of Cu{sub 2}O photoelectrodes.

  16. Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

    Science.gov (United States)

    Asada, Satoshi; Kimoto, Tsunenobu; Ivanov, Ivan G.

    2017-08-01

    Previous work has shown that the concentration of shallow dopants in a semiconductor can be estimated from the photoluminescence (PL) spectrum by comparing the intensity of the bound-to-the-dopant exciton emission to that of the free exciton. In this work, we study the low-temperature PL of high-quality uncompensated Al-doped p-type 4H-SiC and propose algorithms for determining the Al-doping concentration using the ratio of the Al-bound to free-exciton emission. We use three different cryogenic temperatures (2, 41, and 79 K) in order to cover the Al-doping range from mid 1014 cm-3 up to 1018 cm-3. The Al-bound exciton no-phonon lines and the strongest free-exciton replica are used as a measure of the bound- and free-exciton emissions at a given temperature, and clear linear relationships are obtained between their ratio and the Al-concentration at 2, 41, and 79 K. Since nitrogen is a common unintentional donor dopant in SiC, we also discuss the criteria allowing one to determine from the PL spectra whether a sample can be considered as uncompensated or not. Thus, the low-temperature PL provides a convenient non-destructive tool for the evaluation of the Al concentration in 4H-SiC, which probes the concentration locally and, therefore, can also be used for mapping the doping homogeneity.

  17. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting.

    Science.gov (United States)

    Kibria, M G; Zhao, S; Chowdhury, F A; Wang, Q; Nguyen, H P T; Trudeau, M L; Guo, H; Mi, Z

    2014-04-30

    Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-neutral, storable and sustainable source of energy. Here we show that one of the major obstacles for achieving efficient and stable overall water splitting over the emerging nanostructured photocatalyst is directly related to the uncontrolled surface charge properties. By tuning the Fermi level on the nonpolar surfaces of gallium nitride nanowire arrays, we demonstrate that the quantum efficiency can be enhanced by more than two orders of magnitude. The internal quantum efficiency and activity on p-type gallium nitride nanowires can reach ~51% and ~4.0 mol hydrogen h(-1) g(-1), respectively. The nanowires remain virtually unchanged after over 50,000 μmol gas (hydrogen and oxygen) is produced, which is more than 10,000 times the amount of photocatalyst itself (~4.6 μmol). The essential role of Fermi-level tuning in balancing redox reactions and in enhancing the efficiency and stability is also elucidated.

  18. Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH33

    Directory of Open Access Journals (Sweden)

    Sergej Alexandrovich Filonovich, Hugo Águas, Tito Busani, António Vicente, Andreia Araújo, Diana Gaspar, Marcia Vilarigues, Joaquim Leitão, Elvira Fortunato and Rodrigo Martins

    2012-01-01

    Full Text Available We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (~20 nm films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film.

  19. THERMOELECTRIC PROPERTIES OF HOT-PRESSED p-TYPE Mg2Si0.3Sn0.7 SOLID SOLUTION

    Directory of Open Access Journals (Sweden)

    G. N. Isachenko

    2014-05-01

    Full Text Available It is shown that thermoelectric energy conversion which gives the possibility for utilizing a low potential heat is one of the ways for adoption of energy-saving technologies; and semiconductor materials with p-type and n-type conductivities having high thermoelectric figure of merit are necessary for operation of thermoelectric generators. The paper deals with possibility of usage of the p-Mg2Si0.3Sn0.7 solid solution (with a nanostructured modification as a couple for the well studied thermoelectric material based on n-Mg2Si-Mg2Sn. A technological scheme for fabrication of heavily doped Mg2Si0.3Sn0.7 solid solution of p-type by hot pressing from nanopowder is developed. The given technology has made it possible to reduce duration of a homogeneous material fabrication and has improved its physical and chemical properties. The samples were made by three ways: direct fusion for polycrystals fabrication; hot pressing from microparticles; nanostructuring, i.e. hot pressing from nanoparticles. By X-ray diffraction it is shown that sizes of structural elements in the fabricated samples are about 40 nm. The probe technique is used for measurement of electric conductivity and Seebeck coefficient. The stationary absolute method is used for measurement of thermal conductivity. Thermoelectric figure of merit is defined by measured values of kinetic coefficients in the temperatures range of 77 – 800 K. It was demonstrated, that electric conductivity, Seebeck coefficient and the power factor do not depend practically on a way of solid solution preparation. Thermal conductivity of samples pressed from nanoparticles has appeared to be higher, than of samples, obtained by direct fusion; i.e. in this case nanostructuring has not led to increase of thermoelectric figure of merit. The conclusion is drawn, that polycrystalline semiconductor Mg2Si0.3Sn0.7 can be used as a p-branch for a thermoelectric generator though nanostructuring has not led to the figure of

  20. Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces

    Science.gov (United States)

    Jang, Jin-Wook; Hayes, Scott; Lin, Jong-Kai; Frear, Darrel R.

    2004-06-01

    The dissolution behavior of Si (100) and (111) dies by eutectic AuSi solder was investigated. On the Si (100) surface, the dissolution primarily occurred by the formation of craters resulting in a rough surface. The dissolution of the Si (111) resulted in a relatively smooth surface. The morphology of the Si (100) surface during a AuSi soldering reaction exhibited more time-dependent behavior and the etching craters on a Si (100) surface grew larger with time whereas Si (111) did not significantly change. This difference was ascribed to the surface energy differences between Si (111) and (100) surfaces that resulted in the two- and three-dimensional dissolution behaviors, respectively. This difference plays an important role in the formation of voids during the AuSi die bonding. The etching craters on Si (100) act as a AuSi solder sink and the regions surrounded by etch pits tend to become voids. For Si (111), flat surfaces were observed in the voided regions. Cross section analysis showed that no solder reaction occurred in the voided region of the Si (111) surface. This suggests the possibility of the formation of a thin inert layer in a potentially voided region prior to assembly. To achieve void-free die bonding, different parameters must be adjusted to the Si (100) and Si (111) surfaces with the AuSi alloy.

  1. Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

    Institute of Scientific and Technical Information of China (English)

    Song Kun; Chai Changchun; Yang Yintang; Jia Hujun; Zhang Xianjun; Chen Bin

    2011-01-01

    A novel structure of 4H-SiC MESFETs is proposed that focuses on surface trap suppression.Characteristics of the device have been investigated based on physical models for material properties and improved trap models.By comparing with the performance of the well-utilized buried-gate incorporated with a field-plate (BG-FP) structure,it is shown that the proposed structure improves device properties in comprehensive aspects.A p-type spacer layer introduced in the channel layer suppresses the surface trap effect and reduces the gate-drain capacitance (Cgd) under a large drain voltage.A p-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while the spacer layer induces less Cgd than a conventional FP.For microwave applications,4H-SiC MESFET for the proposed structure has a larger gate-lag ratio in the saturation region due to better surface trap isolation from the conductive channel.For high power applications,the proposed structure is able to endure higher operating voltage as well.The maximum saturation current density of 460 mA/mm is yielded.Also,the gate-lag ratio under a drain voltage of 20 V is close to 90%.In addition,5% and 17.8% improvements in fT and fmax are obtained compared with a BG-FP MESFET in AC simulation,respectively.Parameters and dimensions of the proposed structure are optimized to make the best of the device for microwave applications and to provide a reference for device design.

  2. Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

    Energy Technology Data Exchange (ETDEWEB)

    Song Kun; Chai Changchun; Yang Yintang; Jia Hujun; Zhang Xianjun; Chen Bin, E-mail: sk88205853@sina.com [Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2011-07-15

    A novel structure of 4H-SiC MESFETs is proposed that focuses on surface trap suppression. Characteristics of the device have been investigated based on physical models for material properties and improved trap models. By comparing with the performance of the well-utilized buried-gate incorporated with a field-plate (BG-FP) structure, it is shown that the proposed structure improves device properties in comprehensive aspects. A p-type spacer layer introduced in the channel layer suppresses the surface trap effect and reduces the gate-drain capacitance (C{sub gd}) under a large drain voltage. A p-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while the spacer layer induces less C{sub gd} than a conventional FP. For microwave applications, 4H-SiC MESFET for the proposed structure has a larger gate-lag ratio in the saturation region due to better surface trap isolation from the conductive channel. For high power applications, the proposed structure is able to endure higher operating voltage as well. The maximum saturation current density of 460 mA/mm is yielded. Also, the gate-lag ratio under a drain voltage of 20 V is close to 90%. In addition, 5% and 17.8% improvements in f{sub T} and f{sub max} are obtained compared with a BG-FP MESFET in AC simulation, respectively. Parameters and dimensions of the proposed structure are optimized to make the best of the device for microwave applications and to provide a reference for device design. (semiconductor devices)

  3. Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer

    Science.gov (United States)

    Jia, Xiao-Jie; Zhou, Chun-Lan; Zhu, Jun-Jie; Zhou, Su; Wang, Wen-Jing

    2016-12-01

    It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076).

  4. Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

    Science.gov (United States)

    González, M.; Carlin, A. M.; Dohrman, C. L.; Fitzgerald, E. A.; Ringel, S. A.

    2011-03-01

    The presence and properties of traps in p-type In0.49Ga0.51P grown on low dislocation density, metamorphic Ge/SiGe/Si substrates and GaAs substrates were determined using deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) leading to the quantification of trap behavior throughout the entire 1.9 eV bandgap of the In0.49Ga0.51P material as a function of substrate. Thermal emission-based DLTS revealed a single hole trap at Ev + 0.71 eV for growth on both lattice matched and mismatched substrates with similar concentrations. Complementary, optical emission-based DLOS measurements detected bandgap states at Ev + 1.18 eV, Ev + 1.36 eV, and Ev + 1.78 eV for p-type In0.49Ga0.51P grown on both substrate types. The total concentration of the DLOS-detected states was found to comprise approximately 80% of the entire trap concentration in p-type In0.49Ga0.51P bandgap. This relatively high concentration of above midgap levels may be of great significance for minority carrier devices that utilize p-type In0.49Ga0.51P (such as high efficiency III-V multijunction solar cells) since their position in the bandgap and high concentrations suggest that strong minority carrier electron trapping behavior can be expected. The primary effect of substituting the GaAs substrate by Ge/SiGe/Si is to increase the concentration of these states by a factor of 2-3, with no additional levels detected due to the replacement by the Si-based substrates, indicating that all detected traps are native to the epitaxial In0.49Ga0.51P material (regardless of the substrate), but whose concentrations appear to be influenced by dislocation density.

  5. Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

    Science.gov (United States)

    Akgul, Funda Aksoy; Akgul, Guvenc

    2017-02-01

    Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

  6. Room temperature deposition of amorphous p-type CuFeO$_2$ and fabrication of CuFeO$_2$/n-Si heterojunction by RF sputtering method

    Indian Academy of Sciences (India)

    TAO ZHU; ZANHONG DENG; XIAODONG FANG; WEIWEI DONG; JINGZHEN SHAO; RUHUA TAO; SHIMAO WANG

    2016-06-01

    Transparent conducting amorphous p-type CuFeO$_2$ (CFO) thin film was prepared by radio-frequency (RF) magnetron sputtering method at room temperature using polycrystalline CuFeO$_2$ target. Amorphous structureof as-deposited film was confirmed by XRD. XPS analysis convinced that the chemical state of Cu$^{+}$ and Fe$^{3+}$ in the film, and the chemical composition of the thin films is close to the stoichiometry of CuFeO$^2$. Surface morphology of the film was analysed by SEM studies. p-type nature and concentration of carriers was investigated by Hall effect measurement. The p–n heterojunction in the structure of Al/n-Si/p-CuFeO$_2$/Al showed good rectifying behaviour with a forward and reverse currents ratio of 555 at 2 V. The turn-on voltage and reverse leakage current values were found to be 0.9 V and 4 $\\mu$A at $−$2 V. Further, the conduction mechanism of forward bias voltage was controlled by thermionic emission (TE) and trap-space charge limited current (TCLC) mechanisms.

  7. Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111 Substrates Grown by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Phongsaphak Sittimart

    2017-01-01

    Full Text Available In this study, n-type β-FeSi2/p-type Si heterojunctions, inside which n-type β-FeSi2 films were epitaxially grown on p-type Si(111 substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560°C and Ar pressure of 2.66×10-1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE theory and Cheung’s and Norde’s methods. Computation using the TE theory showed that the values of ideality factor (n were 1.71 at 300 K and 16.83 at 20 K, while the barrier height (ϕb values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the n and ϕb values computed using the TE theory were in agreement with those computed using Cheung’s and Norde’s methods. The values of series resistance (Rs computed at 300 K and 20 K by Norde’s method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the Rs values found through computation by Cheung’s method. The dramatic increment of Rs value at low temperatures was likely attributable to the increment of n value at low temperatures.

  8. Chemisorption of Au on Si(001) surface

    Institute of Scientific and Technical Information of China (English)

    Wei Shu-Yi; Wang Jian-Guang; Ma Li

    2004-01-01

    @@ The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001)surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B1 site(bridge site), resulting in a Au-Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.

  9. On the structure of Si(100) surface

    DEFF Research Database (Denmark)

    Back, Seoin; Schmidt, Johan Albrecht; Ji, Hyunjun;

    2013-01-01

    We revisit a dangling theoretical question of whether the surface reconstruction of the Si(100) surface would energetically favor the symmetric or buckled dimers on the intrinsic potential energy surfaces at 0 K. This seemingly simple question is still unanswered definitively since all existing...

  10. Si-C Linked Organic Monolayers on Crystalline Silicon Surfaces as Alternative Gate Insulators

    NARCIS (Netherlands)

    Faber, Erik J.; Smet, de Louis C.P.M.; Olthuis, Wouter; Zuilhof, Han; Sudhölter, Ernst J.R.; Bergveld, Piet; Berg, van den Albert

    2005-01-01

    Herein, the influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type (100) and n-type (100) silicon is studied by forming MIS (metal–insulator–semiconductor) diodes using a mercury probe. From current density–voltage (J–V) and capacitance–voltage (C–

  11. Delayed charge recovery discrimination of passivated surface alpha events in P-type point-contact detectors

    Science.gov (United States)

    Gruszko, J.; Majorana Collaboration

    2017-09-01

    The Majorana Demonstrator searches for neutrinoless double-beta decay of 76Ge using arrays of high-purity germanium detectors. If observed, this process would demonstrate that lepton number is not a conserved quantity in nature, with implications for grand-unification and for explaining the predominance of matter over antimatter in the universe. A problematic background in such large granular detector arrays is posed by alpha particles. In the Majorana Demonstrator, events have been observed that are consistent with energy-degraded alphas originating on the passivated surface, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, charges drift through the bulk onto that surface, and then drift along it with greatly reduced mobility. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. In this contribution we discuss the characteristics of these events and the development of a filter that can identify the occurrence of this delayed charge recovery, allowing for the efficient rejection of passivated surface alpha events in analysis.

  12. Piezoresistance in p-type silicon revisited

    DEFF Research Database (Denmark)

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads;

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find that the ...

  13. Delayed charge recovery discrimination of passivated surface alpha events in P-type point-contact detectors

    CERN Document Server

    Gruszko, J; Arnquist, I J; Avignone, F T; Barabash, A S; Bertrand, F E; Bradley, A W; Brudanin, V; Busch, M; Buuck, M; Caldwell, T S; Chan, Y-D; Christofferson, C D; Chu, P H; Cuesta, C; Detwiler, J A; Dunagan, C; Efremenko, Yu; Ejiri, H; Elliott, S R; Fullmer, A; Galindo-Uribarri, A; Gilliss, T; Giovanetti, G K; Green, M P; Gruszko, J; Guinn, I S; Guiseppe, V E; Henning, R; Hoppe, E W; Howe, M A; Jasinski, B R; Keeter, K J; Kidd, M F; Konovalov, S I; Kouzes, R T; Leon, J; Lopez, A M; MacMullin, J; Martin, R D; Massarczyk, R; Meijer, S J; Mertens, S; Orrell, J L; O'Shaughnessy, C; Poon, A W P; Radford, D C; Rager, J; Rielage, K; Robertson, R G H; Romero-Romero, E; Shanks, B; Shirchenko, M; Suriano, A M; Tedeschi, D; Trimble, J E; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Wiseman, C; Xu, W; Yakushev, E; Yu, C H; Yumatov, V; Zhitnikov, I

    2016-01-01

    The Majorana Demonstrator searches for neutrinoless double-beta decay of $^{76}$Ge using arrays of high-purity germanium detectors. If observed, this process would demonstrate that lepton number is not a conserved quantity in nature, with implications for grand-unification and for explaining the predominance of matter over antimatter in the universe. A problematic background in such large granular detector arrays is posed by alpha particles. In the Majorana Demonstrator, events have been observed that are consistent with energy- degraded alphas originating on the passivated surface, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, charges drift through the bulk onto that surface, and then drift along it with greatly reduced mobility. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. In this c...

  14. Behind the Nature of Titanium Oxide Excellent Surface Passivation and Carrier Selectivity of c-Si

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Crovetto, Andrea; Hansen, Ole

    We present an expanded study of the passivation properties of titanium dioxide (TiO2) on p-type crystalline silicon (c-Si). We report a low surface recombination velocity (16 cm/s) for TiO2 passivation layers with a thin tunnelling oxide interlayer (SiO2 or Al2O3) on p-type crystalline silicon (c......-Si). The TiO2 films were deposited by thermal atomic layer deposition (ALD) at temperatures in the range of 80-300  ̊C using titanium tetrachloride (TiCl4) as Ti precursor and water as the oxidant. The influence of TiO2 thickness (5, 10, 20 nm), presence of additional tunneling interlayer (SiO2 or Al2O3...

  15. Iron-Treated NiO as a Highly Transparent p-Type Protection Layer for Efficient Si-Based Photoanodes

    DEFF Research Database (Denmark)

    Mei, Bastian Timo; Permyakova, Anastasia Aleksandrovna; Frydendal, Rasmus;

    2014-01-01

    Sputter deposition of 50 nm thick NiO films on p+–n-Si and subsequent treatment in an Fe-containing electrolyte yielded highly transparent photoanodes capable of water oxidation (OER) in alkaline media (1 M KOH) with high efficiency and stability. The Fe treatment of NiO thin films enabled Si...... stability for more than 2000 days of continuous operation. Therefore, protection by Fe-treated NiO films is a promising strategy to achieve highly efficient and stable photoanodes....

  16. The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects

    Directory of Open Access Journals (Sweden)

    Dahye Kim

    2016-10-01

    Full Text Available We intentionally generated surface defects in WSe2 using a low energy argon (Ar+ ion-beam. We were unable to detect any changes in lattice structure through Raman spectroscopy as expected through simulation. Meanwhile, atomic force microscopy showed roughened surfaces with a high density of large protruding spots. Defect-activated Photoluminescence (PL revealed a binding energy reduction of the W 4f core level indicating significant amounts of defect generation within the bandgap of WSe2 even at the lowest studied 300 eV ion-beam energy. The intensity ratio increase of direct PL peak demonstrated the decoupling of surface layers, which behave like consecutive defective monolayers. Electrical measurements after post-irradiation showed p-type ohmic contacts regardless of the ion-beam energy. The resulting ohmic contact contributed to an increased on/off current ratio, mobility enhancement of around 350 cm2V-1s-1 from a few cm2V-1s-1 in pristine devices and electron conduction suppression. Further increased ion-beam energy over 700 eV resulted in a high shift of threshold voltage and diminished subthreshold slope due to increased surface roughness and boosted interface scattering. The origin of the ohmic contact behavior in p-type WSe2 is expected to be from chalcogen vacancy defects of a certain size which pins the Fermi level near the valence band minimum. An optimized ion-beam irradiation process could provide solutions for fabricating ohmic contacts to transition metal dichalcogenides.

  17. Adsorption of Si on Gu(100) and (111) Surfaces

    Institute of Scientific and Technical Information of China (English)

    HE Guo-Min

    2004-01-01

    @@ Employing the density-functional theory within the generalized gradient approximation, we investigate the interaction between atomic Si and the Cu(100) and (111) surfaces. Various structures of on-surface adsorption as well as surface-substitutional adsorption for a wide range of Si coverage are considered. Our results show that both Cu(100) and (111) surfaces are active for adsorption of Si. The c(2 × 2)-Si/Cu(100) surface alloy is energetically favourable for a large range of Si chemical potential while c(2 × 2)-Si/Cu(111) is energetically favourable only under Si rich conditions.

  18. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres [Research School of Engineering, The Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  19. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.; Rudolph, H.

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are identifie

  20. Photocatalytic performance of the SiO2 sphere/ n-type TiO2/ p-type CuBiS2 composite catalysts coated with different contents of Ag nanoparticles under ultraviolet and visible light irradiations

    Science.gov (United States)

    Abdullah, Hairus; Kuo, Dong-Hau

    2016-08-01

    Photocatalytic performance of the SiO2 sphere/ n-type TiO2/ p-type CuBiS2 composite catalysts with different contents of silver nanoparticles (abbreviated as SiO2/ n-TiO2/ p-CuBiS2/Ag) toward the photodegradation of Acid Black 1 ( AB 1) dye under ultraviolet (UV) and visible light was investigated. The composite catalyst spheres were analyzed their crystal structure, microstructure, optical absorbance capabilities, and photodegradation capabilities of AB 1 dye. The best photodegradation performances of the 20 mg composite powder with only ~5 mg photoactive catalysts showed the degradation of AB 1 dye in 5 min under UV and 60 min under visible light irradiations. The concept of composite catalyst with numerous nano p- n diodes and its photodegradation mechanism were proposed.

  1. Surface and Step Conductivities on Si(111) Surfaces.

    Science.gov (United States)

    Just, Sven; Blab, Marcus; Korte, Stefan; Cherepanov, Vasily; Soltner, Helmut; Voigtländer, Bert

    2015-08-07

    Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of σ(step)=(29±9)  Ω(-1) m(-1) and to a step-free surface conductivity of σ(surf)=(9±2)×10(-6)  Ω(-1)/□ for the Si(111)-(7×7) surface.

  2. Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators

    NARCIS (Netherlands)

    Faber, E.J.; Smet, de L.C.P.M.; Olthuis, W.; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, P.; Berg, van den A.

    2005-01-01

    Herein, the influence of silicon surface modification via SiCnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type 100 and n-type 100 silicon is studied by forming MIS (metal-insulator-semiconductor) diodes using a mercury probe. From current density-voltage (J-V) and capacitance-voltage (C-V) me

  3. Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators

    NARCIS (Netherlands)

    Faber, E.J.; Smet, de L.C.P.M.; Olthuis, W.; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, P.; Berg, van den A.

    2005-01-01

    Herein, the influence of silicon surface modification via SiCnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type 100 and n-type 100 silicon is studied by forming MIS (metal-insulator-semiconductor) diodes using a mercury probe. From current density-voltage (J-V) and capacitance-voltage (C-V)

  4. Quantitative analysis of chemical interaction and doping of the Si(111) native oxide surface with tetrafluorotetracyanoquinodimethane

    Energy Technology Data Exchange (ETDEWEB)

    Yoshimoto, Shinya, E-mail: yosshi@issp.u-tokyo.ac.jp; Furuhashi, Masayuki; Koitaya, Takanori; Shiozawa, Yuichiro; Fujimaki, Kazutaka; Harada, Yosuke; Mukai, Kozo; Yoshinobu, Jun [The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)

    2014-04-14

    The charge-transfer states and the carrier concentration of the native oxide Si(111) surface adsorbed with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F{sub 4}-TCNQ) were investigated by X-ray photoelectron spectroscopy (XPS) and independently driven four-probe electrical conductivity measurements. The XPS results show that F{sub 4}-TCNQ molecules are involved in charge transfer with the SiO{sub 2}/Si(111) surface. The Si 2p XPS spectra and the surface photovoltage shift provide the evidences of (i) change in the oxidation states at the SiO{sub 2}-Si(111) interface region and (ii) formation of a p-type space charge layer (SCL) with a hole concentration of 1.7 × 10{sup 10} cm{sup −2}, respectively. The four-probe I–V measurements also support the formation of the p-type SCL, and the estimated hole concentration of 2.0 × 10{sup 10} cm{sup −2} agrees well with the XPS results. The estimated SCL hole concentrations were much smaller than the excess charge density in the F{sub 4}-TCNQ layer, of the order of 10{sup 13} cm{sup −2}, suggesting that most of charges were localized as the oxidation states at the SiO{sub 2}-Si(111) interface region. The present quantitative methods ensure precise determination of the doping concentration near the surface region.

  5. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Science.gov (United States)

    Zhou, H. P.; Xu, S.; Xu, M.; Xu, L. X.; Wei, D. Y.; Xiang, Y.; Xiao, S. Q.

    2017-02-01

    Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiHn/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  6. Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

    Science.gov (United States)

    Dingemans, G.; Mandoc, M. M.; Bordihn, S.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2011-05-01

    Very low surface recombination velocities field-effect passivation was absent for a reference stack comprising thermally grown SiO2. The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures >800 °C.

  7. Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

    Directory of Open Access Journals (Sweden)

    Hua Li

    2012-06-01

    Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

  8. Surface Recombination Investigation in Thin 4H-SiC Layers

    Directory of Open Access Journals (Sweden)

    Karolis GULBINAS

    2011-07-01

    Full Text Available n- and p-type 4H-SiC epilayers were grown on heavily doped SiC substrates. The thickness of the p-type layer was 7 µm and the doping level around 1017 cm 3, while the n-type epilayers were 15 µm thick and had a doping concentration of 3 - 5*1015 cm 3. Several different surface treatments were then applied on the epilayers for surface passivation: SiO2 growth, Al2O3 deposited by atomic layer deposition, and Ar-ion implantation. Using collinear pump - probe technique the effective carrier lifetimes were measured from various places and statistical lifetime distributions were obtained. For surface recombination evaluation, two models are presented. One states that surface recombination velocity (SRV is equal on both the passivation/epi layer interface (S2 and the deeper interface between the epilayer and the SiC substrate i. e. (S1 = S2. The other model is simulated assuming that SRV in the epilayer/substrate (S1 interface is constant while in the passivation layer/epilayer (S2 interface SRV can be varied S2 < S1. Empirical nomograms are presented with various parameters sets to evaluate S2 values. We found that on the investigated 4H-SiC surfaces S2 ranges from 3x104 to 5x104 assuming that the bulk lifetime is 4 (µs. In Ar+ implanted surfaces S2 is between (105 - 106 cm/s.http://dx.doi.org/10.5755/j01.ms.17.2.479

  9. Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J, E-mail: isaac@planck.reduaz.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, ZAC. (Mexico)

    2009-05-01

    We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp{sup 3}s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

  10. Chemical shift and surface characteristics of Al-doped ZnO thin film on SiOC dielectrics.

    Science.gov (United States)

    Oh, Teresa; Lee, Sang Yeol

    2013-10-01

    Aluminum doped zinc oxide (AZO) films were fabricated on SiOC/p-Si wafer and SiOC film was prepared on a p-type Si substrate with the SiC target at oxygen ambient with the gas flow rate of 5-30 sccm by a RF magnetron sputter. C-V curve of SiOC/Si wafer was measured to observe the relationship between the polarity of SiOC dielectrics and the change of capacitance depending on oxygen gas flow rate. The SiOC film could be controlled to be polar or nonpolar, and their surface energy was changed depending on the polarity. Smooth surface is essential to improve the TFT performance. AZO-TFTs used smooth SiOC film with low polarity as a gate insulator was observed to show low leakage current (IL) and low subthreshold voltage swing. It is proposed that SiOC film with high degree amorphous structure as a gate insulator between AZO and Si wafer could solve problems of the mismatched interfaces, which was originated from the electron scattering due to the grain boundary.

  11. Interaction between graphene and SiO2 surface

    OpenAIRE

    Fan, X. F.; W. T. Zheng; Shen, Z. X.; Kuo, Jer-Lai

    2011-01-01

    With first-principles DFT calculations, the interaction between graphene and SiO2 surface has been analyzed by constructing the different configurations based on {\\alpha}-quartz and cristobalite structures. The single layer graphene can stay stably on SiO2 surface is explained based on the general consideration of configuration structures of SiO2 surface. It is also found that the oxygen defect in SiO2 surface can shift the Fermi level of graphene down which opens out the mechanism of hole-do...

  12. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  13. Effect of Si interface surface roughness to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor

    Energy Technology Data Exchange (ETDEWEB)

    Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru [Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Nandiyanto, Asep Bayu Dani [Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Murakami, Hideki [Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Khairrurijal [Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)

    2016-02-08

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  14. Kinetics and thermodynamics of Si(111) surface nitridation in ammonia

    Science.gov (United States)

    Mansurov, Vladimir G.; Malin, Timur V.; Galitsyn, Yurij G.; Shklyaev, Alexander A.; Zhuravlev, Konstantin S.

    2016-05-01

    Kinetics and thermodynamics of Si(111) surface nitridation under an ammonia flux at different substrate temperatures are investigated by reflection high-energy electron diffraction. Two different stages of the nitridation process were revealed. The initial stage is the fast (within few seconds) formation of ordered two-dimensional SiN phase, occuring due to the topmost active surface Si atom (Sisurf) interaction with ammonia molecules. It is followed by the late stage consisting in the slow (within few minutes) amorphous Si3N4 phase formation as a result of the interaction of Si atoms in the lattice site (Siinc) with chemisorbed ammonia molecules. It was found that the ordered SiN phase formation rate decreases, as the temperature increases. The kinetic model of the initial stage was developed, in which the ordered SiN phase formation is the two-dimensional phase transition in the lattice gas with SiN cells. The enthalpy of the active surface Si atom generation on the clean Si(111) surface was estimated to be about 1.5 eV. In contrast, the amorphous Si3N4 phase formation is the normal (thermally activated) chemical process with the first-order kinetics, whose activation energy and pre-exponential factor are 2.4 eV and 108 1/s, respectively.

  15. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    Science.gov (United States)

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  16. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

    Directory of Open Access Journals (Sweden)

    Gema López

    2013-11-01

    Full Text Available The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx stacks on both p-type and n-type crystalline silicon (c-Si substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD to form anti-reflection coating (ARC stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (Seff,max was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

  17. Reactions between monolayer Fe and Si(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, M.; Kobayashi, N.; Hayashi, N. [Electrotechnical Lab., Tsukuba, Ibaraki (Japan)

    1997-03-01

    Reactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2x1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2x1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560-650degC composite heteroepitaxial layer of both type A and type B {beta}-FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700degC. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500degC, however the annealing above 710degC leads to the diffusion. We obtained 2D ordered surface, which showed 3x3 RHEED pattern as referenced to the primitive unreconstructed Si(001) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470degC. (author)

  18. Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces

    NARCIS (Netherlands)

    Zandvliet, H.J.W.; Elswijk, H.B.; Loenen, van E.J.; Tsong, I.S.T.

    1992-01-01

    Surfaces of Si(111)-(7×7) and Si(100)-(2×1) were bombarded by 3-keV Ar+ ions at doses of ≤1012 ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscop

  19. Study of GaN adsorption on the Si surface

    Energy Technology Data Exchange (ETDEWEB)

    Li Wei, E-mail: tolwwt@163.com [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, 510006 Guangzhou (China); Chen Junfang [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, 510006 Guangzhou (China); Wang Teng [School of Computer, South China Normal University, 510006 Guangzhou (China)

    2009-10-15

    The adsorption energy, the band structures and DOS (density of states) of GaN on surface of Si(1 0 0) and Si(1 1 1) are calculated by the first-principle using plane-wave pseudo-potentials method based on the density functional theory in order to know the adsorption between the surface of Si and GaN. The calculation results show that GaN is easier adsorbed on the surface of Si(1 0 0) than the surface of Si(1 1 1) under the same experimental condition. There are strong charge distributions between N and Si atom. The bandgap of GaN on surface of Si(1 0 0) becomes a little narrower than that of pure GaN. On the other hand, GaN film is deposited on the surface of Si(1 0 0) by ECR-MOPECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) at low temperature. For substrate of Si(1 1 1), no film is obtained under the same experimental condition.

  20. Bi covered Si(111) surface revisited

    CERN Document Server

    Miwa, R H; Srivastava, G P

    2003-01-01

    We have performed an ab initio study of the stability, atomic geometry and electronic structure of the Bi-covered (sq root 3 x sq root 3) reconstructed Si(111) surface. We find that the energetically stable structure changes from the milkstool model (for 1 monolayer (ML) coverage) to the T sub 4 model (for 1/3 ML coverage), without going through a stable structure for the honeycomb model (2/3 ML coverage). Our theoretical scanning tunnelling microscopy (STM) simulation for the 1 ML coverage reveals the formation of Bi trimers for occupied states, and a honeycomb image for empty states. This result, together with the energetically unstable structure for 2/3 ML coverage, suggests that the experimentally observed STM image in the form of the honeycomb structure does not mean that the minimum energy configuration corresponds to Bi coverage of 2/3 ML, but rather represents current tunnelling into the empty states localized between Bi trimers for the milkstool model with 1 ML coverage.

  1. High-efficiency si/polymer hybrid solar cells based on synergistic surface texturing of Si nanowires on pyramids.

    Science.gov (United States)

    He, Lining; Lai, Donny; Wang, Hao; Jiang, Changyun; Rusli

    2012-06-11

    An efficient Si/PEDOT:PSS hybrid solar cell using synergistic surface texturing of Si nanowires (SiNWs) on pyramids is demonstrated. A power conversion efficiency (PCE) of 9.9% is achieved from the cells using the SiNW/pyramid binary structure, which is much higher than similar cells based on planar Si, pyramid-textured Si, and SiNWs. The PCE is the highest reported to-date for hybrid cells based on Si nanostructures and PEDOT.

  2. The description of charge transfer in fast negative ions scattering on water covered Si(100) surfaces

    Science.gov (United States)

    Chen, Lin; Qiu, Shunli; Liu, Pinyang; Xiong, Feifei; Lu, Jianjie; Liu, Yuefeng; Li, Guopeng; Liu, Yiran; Ren, Fei; Xiao, Yunqing; Gao, Lei; Zhao, Qiushuang; Ding, Bin; Li, Yuan; Guo, Yanling; Chen, Ximeng

    2016-11-01

    Doping has significantly affected the characteristics and performance of semiconductor electronic devices. In this work, we study the charge transfer processes for 8.5-22.5 keV C- and F- ions scattering on H2O-terminated p-type Si(100) surfaces with two different doping concentrations. We find that doping has no influence on negative-ion formation for fast collisions in this relatively high energy range. Moreover, we build a model to calculate negative ion fractions including the contribution from positive ions. The calculations support the nonadiabatic feature of charge transfer.

  3. Spatially resolved scanning tunneling spectroscopy of single-layer steps on Si(100) surfaces

    Science.gov (United States)

    Wang, Xiqiao; Namboodiri, Pradeep; Li, Kai; Deng, Xiao; Silver, Richard

    2016-09-01

    Single-layer steps at Si(100) surfaces/interfaces present significant challenges to the quantitative characterization of buried dopant devices as well as the accurate imaging and relocation of fabricated quantum structures. We demonstrate the detailed spatially resolved scanning tunneling spectroscopy study across monolayer step edges on Si(100) surfaces and quantitative determination of the local density of state distributions and behavior of the band gap at step edges. The influence on the local electrostatic environment due to step edge states has been quantified while accounting for the effects of scanning tunneling measurement conditions. The dangling bond states on Si(100) surfaces are utilized as a fingerprint to quantify the local band bending landscape and to make corrections to the experimentally observed surface state energy levels and band gap values at the step edge regions. We observe a significant band gap narrowing behavior along a rebonded single-layer type B step edge on a degenerately boron-doped p -type Si substrate.

  4. Stability of Ta-encapsulating Si clusters on Si(111)-(7x7) surfaces

    CERN Document Server

    Uchida, N; Miyazaki, T; Kanayama, T

    2003-01-01

    Tantalum containing Si cluster ions TaSi sub 1 sub 0 sub - sub 1 sub 3 H sub x sup + were synthesized in an ion trap and deposited onto Si(111)-(7x7) surfaces with a kinetic energy of 18 eV. Scanning tunnelling microscope observations revealed that the clusters adsorbed on the surface without decomposition, consistent with ab initio calculation results, that predicted the clusters would have stable Si-cage structures with a Ta atom at the centre. (rapid communication)

  5. Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

    Science.gov (United States)

    Eneman, Geert; De Keersgieter, An; Witters, Liesbeth; Mitard, Jerome; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron

    2013-04-01

    The interaction between two stress techniques, strain-relaxed buffers (SRBs) and epitaxial source/drain stressors, is studied on short, Si1-xGex- and Ge-channel planar transistors. This work focuses on the longitudinal channel stress generated by these two techniques. Unlike for unstrained silicon-channel transistors, for strained channels on top of a strain-relaxed buffer a source/drain stressor without recess generates similar longitudinal channel stress than source/drain stressors with a deep recess. The least efficient stress transfer is obtained for source/drain stressors with a small recess that removes only the strained channel, not the substrate underneath. These trends are explained by a trade-off between elastic relaxation of the strained-channel during source/drain recess and the increased stress generation of thicker source/drain stressors. For Ge-channel pFETs, GeSn source/drains and Si1-xGex strain-relaxed buffers are efficient stressors for mobility enhancement. The former is more efficient for gate-last schemes than for gate-first, while the stress generated by the SRB is found to be independent of the gate-scheme.

  6. Molecular simulation of alkyl monolayers on the Si(111)surface

    Institute of Scientific and Technical Information of China (English)

    YUAN; Shiling; (苑世领); CAI; Zhengting; (蔡政亭); XIAO; Li; (肖莉); XU; Guiying; (徐桂英); LIU; Yongjun; (刘永军)

    2003-01-01

    The structure of twelve-carbon monolayers on the H-terminated Si(111) surface is investigated by molecular simulation method. The best substitution percent on Si(111) surface obtained via molecular mechanics calculation is equal to 50%, and the (8×8) simulated cell can be used to depict the structure of alkyl monolayer on Si surface. After two-dimensional cell containing alkyl chains and four-layer Si(111) crystal at the substitution 50% is constructed, the densely packed and well-ordered monolayer on Si(111) surface can be shown through energy minimization in the suitable-size simulation cell. These simulation results are in good agreement with the experiments. These conclusions show that molecular simulation can provide otherwise inaccessible mesoscopic information at the molecular level, and can be considered as an adjunct to experiments.

  7. Metastability of a-SiOx:H thin films for c-Si surface passivation

    Science.gov (United States)

    Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

    2017-01-01

    The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

  8. Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Hazra, Purnima; Singh, Satyendra Kumar [Department of Electronics and Communication Engineering, Motilal Neheru National Institute of Technology, Allahabad 211004 (India); Jit, Satyabrata, E-mail: sjit.ece@itbhu.ac.in [Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005 (India)

    2015-01-01

    In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the

  9. 200 nm-1000 nm spectra of light emitted in the impact of 40Ar10+ upon Al and Si solid surfaces

    Institute of Scientific and Technical Information of China (English)

    ZHANG; Xiaoan; (张小安); ZHAO; Yongtao; (赵永涛); LI; Fuli; (李福利); YANG; Zhihu(杨治虎); XIAO; Guoqing(肖国青); ZHAN; Wenlong(詹文龙)

    2003-01-01

    This paper reports the measured results of the 200 nm-1000 nm characteristic spectral lines of Al, Si and Ar atoms when highly charged ions 40Ar10+ are incident upon Al and P-type Si surfaces. The ion 40Ar10+ is provided by the ECR ion source of the National Laboratory of the Heavy Ion Accelerator in Lanzhou. The results show that when the low-speed ions in the highly charged state interact with the solid surfaces, the characteristic spectral lines of the target atoms and ions spurted from the surfaces can be effectively excited. Moreover, because of the competition of the non-radiation de-excitation of the hollow atom by emitting secondary electrons with the de-excitation process by radiating photons, the spectral intensity of the characteristic spectral lines of Ar atoms on the P-type Si surface is, as a whole, greater than that of Ar atoms on the Al surface.

  10. Optical properties of Si nanoclusters with passivated surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Dinh, L.N. [Univ. of California, Davis, CA (United States). Dept. of Applied Science]|[Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.; Chase, L.L.; Balooch, M.; Siekhaus, W.J. [Lawrence Livermore National Lab., CA (United States). Chemistry and Material Science Dept.; Wooten, F. [Univ. of California, Davis, CA (United States). Dept. of Applied Science

    1996-12-31

    Si nanoclusters with average size of a few nanometers have been synthesized by thermal vaporization of Si in an Ar buffer gas, and passivated with oxygen or atomic hydrogen. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) revealed that these nanoclusters were crystalline. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times form nanoseconds to microseconds depending on synthesis conditions. Absorption mainly in the Si cores was observed by photoluminescence excitation (PLE) spectroscopy. The visible components of PL spectra were noted to blue shift and broaden as the size of the Si nanocrystals (nc-Si) was reduced, and there were differences in PL spectra for hydrogen and oxygen passivated nc-Si. This data can be explained best by a model involving absorption between quantum confined states in the Si cores and emission by surface/interface states.

  11. Ammonia modification of oxide-free Si(111) surfaces

    Science.gov (United States)

    Chopra, Tatiana Peixoto; Longo, Roberto C.; Cho, Kyeongjae; Chabal, Yves J.

    2016-08-01

    Amination of surfaces is useful in a variety of fields, ranging from device manufacturing to biological applications. Previous studies of ammonia reaction on silicon surfaces have concentrated on vapor phase rather than wet chemical processes, and mostly on clean Si surfaces. In this work, the interaction of liquid and vapor-phase ammonia is examined on three types of oxide-free surfaces - passivated by hydrogen, fluorine (1/3 monolayer) or chlorine - combining infrared absorption spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The resulting chemical composition highly depends on the starting surface; there is a stronger reaction on both F- and Cl-terminated than on the H-terminated Si surfaces, as evidenced by the formation of Si-NH2. Side reactions can also occur, such as solvent reaction with surfaces, formation of ammonium salt by-products (in the case of 0.2 M ammonia in dioxane solution), and nitridation of silicon (in the case of neat and gas-phase ammonia reactions for instance). Unexpectedly, there is formation of Si-H bonds on hydrogen-free Cl-terminated Si(111) surfaces in all cases, whether vapor phase of neat liquid ammonia is used. The first-principles modeling of this complex system suggests that step-edge surface defects may play a key role in enabling the reaction under certain circumstances, despite the endothermic nature for Si-H bond formation.

  12. A synergetic effect of surface texture and field-effect passivations on improving Si solar cell performance

    Science.gov (United States)

    Qiu, Ying; Wang, Liangxing; Hao, Hongchen; Shi, Wei; Lu, Ming

    2015-07-01

    P-type Si substrate based solar cells were prepared with indium-tin-oxide thin films as the front top electrodes and Al layers as the rear ones. A synergetic effect of surface texture and field-effect passivations on improving Si solar cell performance was investigated. The surface texture was conducted by NaOH etching of Si, and field-effect passivations were performed by introducing SiO2 and Al2O3 thin film layers at the front and rear sides of the Si solar cell, respectively. The surface texture treatment makes the Si solar cell efficiency increase from 9.81% to 11.08%. After the synergetic treatments of surface texture and field-effect passivations, the efficiency further increased to 15.04%, that is, a more than 50% relative efficiency enhancement was obtained. This work demonstrates the significant effectiveness and facile applicability of the synergetic effect of surface texture and field-effect passivations on improving Si solar cell performance.

  13. Surface engineering of SiC via sublimation etching

    Science.gov (United States)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  14. Behaviour of total surface charge in SiO{sub 2}-Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Ban-Hong [Material Characterization Department, Shin Etsu Handotai (M) Sdn. Bhd., Ulu Klang, Selangor (Malaysia); Lee, Wah-Pheng [Faculty of Engineering, Multimedia University, Persiaran Multimedia, Cyberjaya, 63100 Selangor (Malaysia); Yow, Ho-Kwang, E-mail: hkyow@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, Cyberjaya, 63100 Selangor (Malaysia); Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, Cyberjaya, 63100 Selangor (Malaysia)

    2009-04-15

    Effects of time-accumulated ultraviolet (UV) irradiation and surface treatment on thermally oxidized p-type silicon wafers were investigated by using the surface photo voltage (SPV) technique via the direct measurement of the total surface charge, Q{sub SC}. The rise and fall times of Q{sub sc} curves, as a function of accumulated UV irradiation, depended on the thermal oxide thickness. A simple model was proposed to explain the time-varying characteristics of Q{sub sc} based on the UV-induced bond breaking of SiOH and SiH, and photoemission of bulk electrons to wafer surface where O{sub 2}{sup -} charges were formed. While these mechanisms resulted in charge variations and hence in Q{sub sc}, these could be removed by rinsing the silicon wafers in de-ionized water followed by spin-dry or blow-dry by an ionizer fan. Empirical parameters were used in the model simulations and curve-fitting of Q{sub SC}. The simulated results suggested that initial changes in the characteristic behaviour of Q{sub sc} were mainly due to the net changes in the positive and negative charges, but subsequently were dominated by the accumulation of O{sub 2}{sup -} during the UV irradiation.

  15. Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.

    Science.gov (United States)

    Ma, J W; Lee, W J; Bae, J M; Jeong, K S; Oh, S H; Kim, J H; Kim, S-H; Seo, J-H; Ahn, J-P; Kim, H; Cho, M-H

    2015-11-11

    Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

  16. Second harmonic generation spectroscopy on Si surfaces and interfaces

    DEFF Research Database (Denmark)

    Pedersen, Kjeld

    2010-01-01

    Optical second harmonic generation (SHG) spectroscopy studies of Si(111) surfaces and interfaces are reviewed for two types of systems: (1) clean 7 x 7 and root 3 x root 3-Ag reconstructed surfaces prepared under ultra-high vacuum conditions where surface states are excited and (2) interfaces......-like interband transitions that can be referred to excitations of dangling bond surface states. Adsorption of oxygen leads to formation of a new surface resonance. Such resonances appearing in the region between the bulk critical points E-1 and E-2 are also shown to be important for Si/oxide interfaces in SOI...

  17. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    Science.gov (United States)

    Liao, Baochen; Hoex, Bram; Aberle, Armin G.; Chi, Dongzhi; Bhatia, Charanjit S.

    2014-06-01

    In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiOx films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiOx films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiOx films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiOx has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiOx in the field of high-efficiency silicon wafer solar cells.

  18. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Baochen, E-mail: liaobaochen@nus.edu.sg [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); A*STAR Institute of Materials Research and Engineering (IMRE), 3 Research Link, Singapore 117602 (Singapore); Hoex, Bram [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore); Aberle, Armin G.; Bhatia, Charanjit S., E-mail: elebcs@nus.edu.sg [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Chi, Dongzhi [A*STAR Institute of Materials Research and Engineering (IMRE), 3 Research Link, Singapore 117602 (Singapore)

    2014-06-23

    In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO{sub x}) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO{sub x} films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO{sub x} films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiO{sub x} films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO{sub x} has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO{sub x} in the field of high-efficiency silicon wafer solar cells.

  19. Laser Surface Hardening of 9CrSi Steel

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The effects of laser hardening parameters such as beam power, beam diameter and scanning rate on microstructureand hardness of 9CrSi steel were investigated. The microstructure of the surface layer of 9CrSi steel was changed frompearlite to martensite, retained austenite and carbide by laser hardening. The depth of the hardened layer increasedwith increasing laser energy density and the surface hardeness increased by 3~5 times as high as the untreated steel.The laser hardened surface had good wear resistance due to martensite and carbide in the surface layer. The wearmode at Iow speed was abrasive, while the wear mode at high speed was adhesive.

  20. Surface structure of thin pseudomorphous GeSi layers

    Science.gov (United States)

    Nikiforov, A. I.; Timofeev, V. F.; Pchelyakov, O. P.

    2015-11-01

    Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1-x film surface superstructures s in the course of molecular beam epitaxy. The (2 × N) superstructure of the epitaxial film surface at periodicity N from 14 to 8, the latter being characteristic of pure germanium at the Si(1 0 0) surface. The epitaxial film thickness that is required for the formation of the (2 × 8) superstructure depends on the deposition temperature and germanium content in the solid solution. The germanium segregation on the growing film surface is shown to be responsible for the observed superstructural changes.

  1. On the wettability diversity of C/SiC surface: Comparison of the ground C/SiC surface and ablated C/SiC surface from three aspects

    Science.gov (United States)

    Wu, M. L.; Ren, C. Z.; Xu, H. Z.

    2016-11-01

    The coefficient of thermal conductivity was influenced by the wetting state of material. The wetting state usually depends on the surface wettability. C/SiC is a promising ceramic composites with multi-components. The wettability of C/SiC composites is hard to resort to the classical wetting theory directly. So far, few investigations focused on C/SiC surface wettability diversity after different material removal processes. In this investigation, comparative studies of surface wettability of ground C/SiC surface and laser-ablated C/SiC surface were carried out through apparent contact angle (APCA) measurements. The results showed that water droplets easily reached stable state on ground C/SiC surface; while the water droplets rappidly penetrated into the laser-ablated C/SiC surface. In order to find out the reason for wettability distinctions between the ground C/SiC surface and the laser-ablated C/SiC surface, comparative studies on the surface micro-structure, surface C-O-Si distribution, and surface C-O-Si weight percentage were carried out. The results showed that (1) A large number of micro cracks in the fuzzy pattern layer over laser-ablated C/SiC surfaces easily destoried the surface tension of water droplets, while only a few cracks existed over the ground C/SiC surfaces. (2) Chemical components (C, O, Si) were non-uniformly distributed on ground C/SiC surfaces, while the chemical components (C, O, Si) were uniformly distributed on laser-ablated C/SiC surfaces. (3) The carbon weight percentage on ground C/SiC surfaces were higher than that on laser-ablated C/SiC surfaces. All these made an essential contribution to the surface wettability diversity of C/SiC surface. Although more investigations about the quantitative influence of surface topography and surface chemical composition on composites wettability are still needed, the conslusion can be used in application: the wettability of C/SiC surface can be controlled by different material removal process

  2. Simulation of Nano Si and Al Wires Growth on Si(1O0) Surface

    Institute of Scientific and Technical Information of China (English)

    吴锋民; 黄辉; 吴自勤

    2000-01-01

    Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer rows are different, so are the sticking probabilities of an adatom, at the end sites of existing islands or the side sites. Both one-dimensional wires of Si and Al are perpendicular to the dimer rows of the substrate, though the diffusion of Si adatoms is contrary to that of Al adatoms, i.e. Si adatoms diffuse faster along the dimer rows while Al adatoms faster across the dimer rows. The simulation results also show that the shape anisotropy of islands is due to the sticking anisotropy rather than the diffusion anisotropy,which is in agreement with the experiments.

  3. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

    Science.gov (United States)

    Hoex, B.; Gielis, J. J. H.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2008-12-01

    Al2O3 is a versatile high-κ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface passivation can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density Qf of up to 1013 cm-2 present in the Al2O3 film at the interface with the underlying Si substrate. The negative polarity of Qf in Al2O3 is especially beneficial for the passivation of p-type c-Si as the bulk minority carriers are shielded from the c-Si surface. As the level of field-effect passivation is shown to scale with Qf2, the high Qf in Al2O3 tolerates a higher interface defect density on c-Si compared to alternative surface passivation schemes.

  4. Depth Profiling of Melting and Metallization in Si(111) and Si(001) Surfaces

    Science.gov (United States)

    Gunnella, R.; Ali, M.; Abbas, M.; D'Amico, F.; Principi, E.; di Cicco, A.

    2011-10-01

    An original approach for measuring the depth profile of melting and metallization of the Si(111) and Si(001) surfaces is proposed and applied. The different probing depths of the Auger electron and electron energy loss (EELS) spectroscopies are exploited to study the number of molten and metallic layers within 5-30 Å from the surface up to about 1650 K. Melting is limited to 3 atomic layers in Si(001) in the range 1400-1650 K while the number of molten layers grows much faster (5 layers at about 1500 K) in Si(111) as also indicated by the L3-edge shift observed by EELS. The relationship between melting and metallization is briefly discussed.

  5. Interaction of Hg Atom with Bare Si(111) Surface

    Institute of Scientific and Technical Information of China (English)

    LIU Yong-Jun; LIU Ying

    2006-01-01

    To evaluate the interaction between Hg atom and bare Si(111) surface, three types of silicon cluster models of Si4H7, Si7H10 and Si16H20 together with their Hg complexes were studied by using hybrid (U)B3LYP density functional theory method. Optimized geometries and energies for Hg atom on different adsorption sites indicate that: 1) the binding energies at different adsorption sites are small (ranging from ~3 to 8 kJ/mol dependent on the adsorption sites), suggesting a weak interaction between Hg atom and silicon surface; 2) the most favorable adsorption site is the on top (T) site. By analyzing their natural bonding orbitals, the possible reason of this difference is suggested.

  6. Surface Damage Mechanism of Monocrystalline Si Under Mechanical Loading

    Science.gov (United States)

    Zhao, Qingliang; Zhang, Quanli; To, Suet; Guo, Bing

    2017-03-01

    Single-point diamond scratching and nanoindentation on monocrystalline silicon wafer were performed to investigate the surface damage mechanism of Si under the contact loading. The results showed that three typical stages of material removal appeared during dynamic scratching, and a chemical reaction of Si with the diamond indenter and oxygen occurred under the high temperature. In addition, the Raman spectra of the various points in the scratching groove indicated that the Si-I to β-Sn structure (Si-II) and the following β-Sn structure (Si-II) to amorphous Si transformation appeared under the rapid loading/unloading condition of the diamond grit, and the volume change induced by the phase transformation resulted in a critical depth (ductile-brittle transition) of cut (˜60 nm ± 15 nm) much lower than the theoretical calculated results (˜387 nm). Moreover, it also led to abnormal load-displacement curves in the nanoindentation tests, resulting in the appearance of elbow and pop-out effects (˜270 nm at 20 s, 50 mN), which were highly dependent on the loading/unloading conditions. In summary, phase transformation of Si promoted surface deformation and fracture under both static and dynamic mechanical loading.

  7. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

    Institute of Scientific and Technical Information of China (English)

    Hu Yuehui; Zhang Xiangwen; Qu Minghao; Wang Lifu; Zeng Tao; Xie Yaojiang

    2009-01-01

    In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.

  8. The microstructure of Si surface layers after plasma-immersion He+ ion implantation and subsequent thermal annealing1

    Science.gov (United States)

    Lomov, Andrey; Shcherbachev, Kirill; Chesnokov, Yurii

    2017-01-01

    The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+ plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOx layer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

  9. Impact of organic overlayers on a-Si:H/c-Si surface potential

    KAUST Repository

    Seif, Johannes P.

    2017-04-11

    Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

  10. Adsorption and diffusion of Si adatom near single-layer steps on Si surface

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiao-Yan; Huang Yan

    2005-01-01

    By use of the empirical tight-binding (ETB) method, the adsorption and diffusion behaviours of single silicon adatom on the reconstructed Si(100) surface with single-layer steps are simulated. The adsorption energies around the SA step, nonrebonded SB step, rebonded SB step, and rough SB step with a kink structure are specially mapped out in this paper, from which the favourable binding sites and several possible diffusion paths are achieved. Because of the rebonded and kink structures, the SB step is more suitable for the attachment of Si adatom than the SA step or defective surface.

  11. Gradient induced liquid motion on laser structured black Si surfaces

    Science.gov (United States)

    Paradisanos, I.; Fotakis, C.; Anastasiadis, S. H.; Stratakis, E.

    2015-09-01

    This letter reports on the femtosecond laser fabrication of gradient-wettability micro/nano-patterns on Si surfaces. The dynamics of directional droplet spreading on the surface tension gradients developed is systematically investigated and discussed. It is shown that microdroplets on the patterned surfaces spread at a maximum speed of 505 mm/s, which is the highest velocity demonstrated so far for liquid spreading on a surface tension gradient in ambient conditions. The application of the proposed laser patterning technique for the precise fabrication of surface tension gradients for open microfluidic systems, liquid management in fuel cells, and drug delivery is envisaged.

  12. Gradient induced liquid motion on laser structured black Si surfaces

    CERN Document Server

    Paradisanos, I; Anastasiadis, S H; Stratakis, E

    2015-01-01

    This letter reports on the femtosecond laser fabrication of gradient-wettability micro/nano- patterns on Si surfaces. The dynamics of directional droplet spreading on the surface tension gradients developed is systematically investigated and discussed. It is shown that microdroplets on the patterned surfaces spread at a maximum speed of 505 mm/sec, that is the highest velocity demonstrated so far for liquid spreading on a surface tension gradient in ambient conditions. The application of the proposed laser patterning technique for the precise fabrication of surface tension gradients for open microfluidic systems, liquid management in fuel cells and drug delivery is envisaged.

  13. Experimental surface charge density of the Si (100)-2x1H surface

    DEFF Research Database (Denmark)

    Ciston, J.; Marks, L.D.; Feidenhans'l, R.;

    2006-01-01

    We report a three-dimensional charge density refinement from x-ray diffraction intensities of the Si (100) 2x1H surface. By paying careful attention to parameterizing the bulk Si bonding, we are able to locate the hydrogen atoms at the surface, which could not be done previously. In addition, we...... are able to partially refine the local charge density at the surface. We find experimentally an increased, slightly localized bond density of approximately 0.31 electrons between each Si atom pair at the surface. Both the atomic positions and the charge density are in remarkably good agreement with density...

  14. Experimental surface charge density of the Si (100)-2x1H surface

    DEFF Research Database (Denmark)

    Ciston, J.; Marks, L.D.; Feidenhans'l, R.

    2006-01-01

    We report a three-dimensional charge density refinement from x-ray diffraction intensities of the Si (100) 2x1H surface. By paying careful attention to parameterizing the bulk Si bonding, we are able to locate the hydrogen atoms at the surface, which could not be done previously. In addition, we...... are able to partially refine the local charge density at the surface. We find experimentally an increased, slightly localized bond density of approximately 0.31 electrons between each Si atom pair at the surface. Both the atomic positions and the charge density are in remarkably good agreement with density...

  15. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  16. Fluorinated saccharides on the Si(0 0 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Szwajca, Anna, E-mail: Anna.Szwajca@amu.edu.pl [Faculty of Chemistry, A. Mickiewicz University, Poznan (Poland); Rapp, Magdalena; Bilska, Monika [Faculty of Chemistry, A. Mickiewicz University, Poznan (Poland); Krzywiecki, Maciej [Institute of Physics, Silesian University of Technology, Gliwice (Poland); Koroniak, Henryk [Faculty of Chemistry, A. Mickiewicz University, Poznan (Poland)

    2013-06-01

    The attachment of saccharide molecules directly to silicon surface has been for the first time. Oxygen free silicon surface was functionalized with monosacharides thanks to UV irradiation in acetonitryl solution (254 nm). Selected derivatives of pentofuranose were protected at the C-1 and C-2 position. The remaining hydroxyl group at C-3 or C-5 was suitable for direct attachment to H-terminated Si(0 0 1) surface via Si-O-C bonds. The binding energy of the saccharide to the Si surface was investigated by quantum mechanical calculations method. The Parametric Method 5 (PM5) calculations confirmed that the formation of Si-O-C bonds was chemically possible. Synthesis of new fluorinated carbohydrates has been described. The resulting monolayers were characterized by Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Attenuated Total Reflection (ATR) infrared spectroscopy. The effect of incorporating fluorine atom or CF{sub 3} group into self-assembled monosaccharide monolayers was studied using a water contact angle measurements. The resulting surface wettability of different fluorinated components on one kind of planar substrate enables an answer which of derivative is required for the preparation of the hydrophobic monolayer.

  17. Kinetically controlled growth of gallium on stepped Si (553) surface

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh; Pasha, Syed Khalid; Govind,, E-mail: govind@nplindia.org

    2013-10-15

    Kinetically controlled growth of gallium (Ga) metal has been reported on high index stepped Si (553) surface and its thermal stability with various novel superstructural phases has been analyzed. Auger electron spectroscopy studies revealed that the adsorption of Ga at room temperature (RT) follows Frank–van der Merwe (FM) growth mode while for higher substrate temperature, Ga adsorption remains within the submonolayer range. Thermal desorption and low energy electron diffraction studies investigated the formation of thermally stable Ga-islands and the various Ga induced superstructural phase on Si (553). During room temperature adsorption, (1 1 1)7 × 7 facet of Si (553) reconstructed into (1 1 1)6 × 6 facet while during desorption process, stable (1 1 1)6 × 6 and (1 1 1)√3 × √3-R30° surface reconstructions has been observed.

  18. Kinetically controlled growth of gallium on stepped Si (553) surface

    Science.gov (United States)

    Kumar, Mukesh; Pasha, Syed Khalid; Govind

    2013-10-01

    Kinetically controlled growth of gallium (Ga) metal has been reported on high index stepped Si (553) surface and its thermal stability with various novel superstructural phases has been analyzed. Auger electron spectroscopy studies revealed that the adsorption of Ga at room temperature (RT) follows Frank-van der Merwe (FM) growth mode while for higher substrate temperature, Ga adsorption remains within the submonolayer range. Thermal desorption and low energy electron diffraction studies investigated the formation of thermally stable Ga-islands and the various Ga induced superstructural phase on Si (553). During room temperature adsorption, (1 1 1)7 × 7 facet of Si (553) reconstructed into (1 1 1)6 × 6 facet while during desorption process, stable (1 1 1)6 × 6 and (1 1 1)√3 × √3-R30° surface reconstructions has been observed.

  19. Second harmonic generation spectroscopy on Si surfaces and interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, 9220 Aalborg Oest (Denmark)

    2010-08-15

    Optical second harmonic generation (SHG) spectroscopy studies of Si(111) surfaces and interfaces are reviewed for two types of systems: (1) clean 7 x 7 and {radical}(3) x {radical}(3)-Ag reconstructed surfaces prepared under ultra-high vacuum conditions where surface states are excited and (2) interfaces in silicon-on-insulator (SOI) structures and thin metal films on Si surfaces where several interfaces contribute to the SHG. In all the systems resonances are seen at interband transitions near the bulk critical points E{sub 1} and E{sub 2}. On the clean surfaces a number of resonances appear below the onset of bulk-like interband transitions that can be referred to excitations of dangling bond surface states. Adsorption of oxygen leads to formation of a new surface resonance. Such resonances appearing in the region between the bulk critical points E{sub 1} and E{sub 2} are also shown to be important for Si/oxide interfaces in SOI structures. Finally, examples of spectroscopy on layers buried below thin Ag and Au films are given. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    Science.gov (United States)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-10-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al2O3) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  1. Direct Observations of Correlation between Si-2p Components and Surface States on Si(110)-16 × 2 Single-Domain Surface Using Si-L23VV Auger-Electron and Si-2p Photoelectron Coincidence Measurements

    Science.gov (United States)

    Kakiuchi, Takuhiro; Yoshizaki, Yuya; Kubota, Hiroyuki; Sato, Yuki; Nagaoka, Shin-ichi; Mase, Kazuhiko

    2017-05-01

    A Si(110)-16 × 2 single-domain (SD) surface is investigated in a site-selective way using Si L23VV Auger-electron Si-2p photoelectron coincidence spectroscopy (Si-L23VV-Si-2p APECS) and Si-2p photoelectron Si-L23VV Auger-electron coincidence spectroscopy (Si-2p-Si-L23VV PEACS). The Si(110)-16 × 2 SD consists of five Si-2p surface components (SC1-SC5) and has four semiconducting surface states (S1-S4). The Si-L2VV-Si-2p1/2 APECS spectrum of the Si(110)-16 × 2 SD measured in coincidence with Si-2p1/2 photoelectrons of SC3, SC4, and SC5 shows two small shoulders in the higher Auger electron kinetic energy (AeKE) region. These shoulders suggest Auger processes involving the surface states S1 and S3. The spectral weights of SC3, SC4, and SC5 Si-2p components are greatly enhanced in the Si-2p-Si-L23VV PEACS spectrum measured at Auger electrons with an AeKE of +5.0 eV relative to the Si L23VV peak. On the other hand, the spectral weights of SC1 and SC2 Si-2p components in the Si-2p-Si-L23VV PEACS spectrum show a maximum peak at a relative AeKE of +3 eV. These results directly support the correlations between the five surface components (SC1-SC5) and four surface states (S1-S4) in the adatom-buckling model for the Si(110)-16 × 2 SD proposed by Sakamoto et al. [https://doi.org/10.1103/PhysRevB.79.045304" xlink:type="simple">Phys. Rev. B 79, 045304 (2009)].

  2. Phospholipid bilayer formation at a bare Si surface

    DEFF Research Database (Denmark)

    Gutberlet, T.; Steitz, R.; Fragneto, G.;

    2004-01-01

    Neutron reflectivity was applied to monitor in situ the adsorption of small unilamellar phospholipid vesicles on a solid bare hydrophilic Si interface. The obtained reflectivity curves are consistent with the rupture and fusion model for the adsorption of phosphatidylcholine vesicles to solid...... interfaces. The results show details of the adsorbed bilayer system at ångström resolution and indicate the presence of a thin ∼6 Å thick water leaflet that separates the bilayer from the Si surface. The resolved structural details provide the basis for further investigation of processes such as adsorption...

  3. Haemocompatibility evaluation of DLC- and SiC-coated surfaces

    Directory of Open Access Journals (Sweden)

    Nurdin N.

    2003-06-01

    Full Text Available Diamond-like carbon (DLC and silicon carbide (SiC coatings are attractive because of low friction coefficient, high hardness, chemical inertness and smooth finish, which they provide to biomedical devices. Silicon wafers (Siwaf and silicone rubber (Sirub plates were coated using plasma-enhanced chemical vapour deposition (PE-CVD techniques. This article describes: 1- the characterization of modified surfaces using attenuated total reflection-Fourier transform infrared spectroscopy (ATR/FTIR and contact angle measurements, 2- the results of three in-vitro haemocompatibility assays. Coated surfaces were compared to uncoated materials and various substrates such as polymethylmethacrylate (PMMA, polyethylene (LDPE, polydimethylsiloxane (PDMS and medical steel (MS. Thrombin generation, blood platelet adhesion and complement convertase activity tests revealed the following classification, from the most to the least heamocompatible surface: Sirub/ DLC-Sirub/ DLC-Siwaf/ LDPE/ PDMS/ SiC-Siwaf/ Siwaf/ PMMA/ MS. The DLC coating surfaces delayed the clotting time, tended to inhibit the platelet and complement convertase activation, whereas SiC-coated silicon wafer can be considered as thrombogenic. This study has taken into account three events of the blood activation: coagulation, platelet activation and inflammation. The response to those events is an indicator of the in vitro haemocompatibility of the different surfaces and it allows us to select biomaterials for further in vivo blood contacting investigations.

  4. Growth of Co Nanoclusters on Si3N4 Surface Formed on Si(111)

    Institute of Scientific and Technical Information of China (English)

    刘熙; 贾金锋; 王俊忠; 薛其坤

    2003-01-01

    We have grown high density Co dusters with a narrow-sized distribution on the Si3N4(0001)-(8 × 8) surface. In the submonolayer regime, Co clusters tend to keep a certain size (~ 1.45 nm in diameter) irrespective of coverage.With increasing coverage above 0.92 ML, two new clusters with certain but larger sizes are formed. This novel growth behaviour can be explained by the quantum size effect [Phys. Rev. Lett. 90 (2003) 185506]. It is found that the Co cluster size distribution can be improved by post annealing. Even at high temperature (700℃ ), no reaction of Co with Si3N4 is observed, indicating that Si3N4(0001)-(8 × 8) is a promising substrate for growth of magnetic nanostructures.

  5. Adsorption of oxygen atom on MoSi2 (110) surface

    Science.gov (United States)

    Sun, S. P.; Li, X. P.; Wang, H. J.; Jiang, Y.; Yi, D. Q.

    2016-09-01

    The adsorption energy, structural relaxation and electronic properties of oxygen atom on MoSi2 (110) surface have been investigated by first-principles calculations. The energetic stability of MoSi2 low-index surfaces was analyzed, and the results suggested that MoSi2 (110) surface had energetically stability. The site of oxygen atom adsorbed on MoSi2 (110) surface were discussed, and the results indicated that the preference adsorption site of MoSi2 (110) surface for oxygen atom was H site (hollow position). Our calculated work should help to understand further the interaction between oxygen atoms and MoSi2 surfaces.

  6. Al2O3 Passivation on c-si Surfaces for Low Temperature Solar Cell Applications

    Energy Technology Data Exchange (ETDEWEB)

    Saynova, D.S.; Janssen, G.J.M.; Burgers, A.R.; Mewe, A.A. [ECN Solar Energy, Westerduinweg 3, NL-1755 LE Petten (Netherlands); Cianci, E.; Seguini, G.; Perego, M. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2,I-20864 Agrate Brianza MB (Italy)

    2013-07-01

    Functional passivation of high resistivity p-type c-Si wafer surfaces was achieved using 10 nm Al2O3 layers and low temperatures for both the thermal ALD process and post-deposition anneal. Effective lifetime values higher than 1 ms were measured at excess carrier density {delta}n=1015 cm{sup -3}. This result was reached in combination with temperatures of 100C and 200C for the Al2O3 layer deposition and anneal, respectively. The Al2O3/c-Si interface was characterized using conductance-voltage and capacitance-voltage measurements. In particular, significantly reduced interface density of the electrically active defects Dit {approx} 2x1010 eV{sup -1}cm{sup -2} was detected, which enabled excellent chemical passivation. The measured density of fixed charges at the interface, Qf, after anneal were in the range +1x10{sup 12} to -1x10{sup 12} cm{sup -2} indicating that both inversion and accumulation conditions result in relevant field-effect passivation using Al2O3 layers and low temperature processes. Numerical simulations on representative test structures show that the uniform Qf effect can be understood in terms of a surface damage region (SDR) present near the interface in combination with asymmetry in the lifetime of holes and electrons in the SDR. The combination of low processing temperatures, thin layers and good passivation properties facilitate a technology for future low temperature solar cell applications.

  7. Investigation of Si(001) stable surfaces in alternating current heating

    Science.gov (United States)

    Doi, T.; Koguchi, M.

    2016-11-01

    The topography of a Si(001) vicinal surface is investigated using reflection electron microscopy (REM) during alternating current (AC) heating of the surface in ultra-high vacuum. The normal direction of the surface is slightly tilted from the [001] direction at θx or θy on the x or y axis (they are orthogonal directions in the Si(001) surface), and the average widths of the terraces (a or b in x or y axis) are determined by θx or θy; the direction perpendicular to the incidence electron beam on the surface is selected as the x (horizontal) axis in each REM image. Alternating current heating changes each initial surface from stable to double-domain (DD), in which 2 × 1 and 1 × 2 terraces are arranged regularly with approximately equal width, at its transition temperature Tc; the dimer rows are parallel to the x or y axis in the 1 × 2 or 2 × 1 terraces. There are two types of stable surfaces in the vicinal surface. At temperatures below its Tc, the surface with horizontally (vertically) long terraces, where b a), changes to a 2 × 1 (1 × 2) surface with wide 2 × 1 (1 × 2) and narrow 1 × 2 (2 × 1) terraces. The terrace, the short side of which is parallel to its dimer row direction, grows to create a stable surface by thermal diffusion of Si atoms at temperatures below Tc. During AC heating, thermal diffusion plays a key role in analyzing the kinetics of the atoms on the surface because the thermal effect acts as the driving force for the atoms that have not yet evaporated from the surface. Then, by evaporating atoms from the vicinal surface, AC heating creates a DD surface at temperatures between its Tc and 1100 °C and a rugged surface consisting of small 2 × 1 and 1 × 2 terraces at temperatures above 1100 °C.

  8. Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers

    Science.gov (United States)

    Yoon, Tae-Sik

    2005-03-01

    We report the experimental investigation of surface roughness and dislocation distribution of 1 μm-thick, compositionally graded, relaxed SiGe buffer layer with a final Ge surface content of 30%. Tensile-strained Si layers are inserted at various locations in the graded buffer during SiGe epitaxial growths. Slight reduction in surface roughness from about 10.3 nm to about 7.8 nm by inserting two 20 nm thick tensile-strained Si layers followed by SiGe growths. It turns out that majority of the residual surface roughness is developed during the SiGe growths on top of the topmost strain Si layer. The surface immediately after the growth of tensile strained Si is very flat with about 1.1 nm RMS roughness and without crosshatch morphology. Cross-sectional TEM shows clear signs of increased interaction between dislocation half-loops at the top surface of the strained Si layers. Our observation shows that although thin Si layers under tensile-strain are effective in reducing cross-hatch, they could in the meantime impede dislocation propagation leading to higher threading dislocation density. Considerations for an optimized scheme exploiting the flattening function of tensile-strained layers will be discussed.

  9. Self-activated, self-limiting reactions on Si surfaces

    DEFF Research Database (Denmark)

    Morgen, Per; Hvam, Jeanette; Bahari, Ali

    mechanism for the direct growth of ultrathin films (0-3 nm) of oxides and nitrides under ultrahigh vacuum conditions. Neutral oxygen and a microwave excited nitrogen plasma interact directly with Si surfaces kept at different temperatures during the reaction. The gas pressures are around 10-6 Torr......The direct thermally activated reactions of oxygen and ammonia with Si surfaces in furnaces have been used for a very long time in the semiconductor industry for the growth of thick oxides and nitride layers respectively. The oxidation mechanism was described in the Deal-Grove model as a diffusion......, and the temperatures vary from room temperature to 10000C.The growth is in these cases self-limiting, with the optimal oxide thickness around 0.7-0.8 nm, at 5000C, and up to a few nm for nitride. The self-limiting oxide case was recently predicted by Alex Demkov in a structural optimization to minimise the total...

  10. Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(0 0 1) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Dentel, D.; Aiet-Mansour, K.; Bischoff, J.L.; Kubler, L.; Bolmont, D

    2004-07-31

    By using reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) analyses, we show that the well-known Stranski-Krastanov growth mode of Ge/Si(0 0 1) can be modified in a Volmer-Weber one by C pre-deposition on the Si(0 0 1) surface or in a Frank-Van der Merve one by supplying atomic hydrogen during the Ge growth. By tuning the growth conditions and acting on the interplay of surface diffusion, strain and surface energy, morphology manipulations by the growth process control are therefore possible. The Si capping of these Ge self-assembled nanostructures also allows us to point out a correlation between the nucleation mechanism of the Ge or SiGe islands and their associated embedding process. On bare Si surfaces, the final morphology of the embedded Ge film is strongly dependent on the kinetic parameters of the capping layer. Indeed oriented migrations of both Si and Ge atoms are able to smooth or to maintain the islands on the surface. Si diffusions also contribute in a rapid restoration of a planar morphology. On Si(0 0 1)-c(4 x 4) the adatom migrations and consequently the covering mechanism of the Ge islands seems to be governed by the strain mapping related to the C pre-deposited surface. The first stages of the Si capping process have revealed the preservation of the Ge islands associated to an increase of the surface roughness.

  11. AES and LEED study of the zinc blende SiC(100) surface

    Science.gov (United States)

    Dayan, M.

    1985-01-01

    Auger and LEED measurements have been carried out on the (100) surface of zinc blende SiC. Two different phases of the clean surface, in addition to two kinds of oxygen-covered surfaces, have been obtained, identified, and discussed. In the oxygen-covered surface, the oxygen is bonded to the Si. The carbon-rich phase is reconstructed (2 x 1), similar to the (100) clean surfaces of Si, Ge, and diamond. The Si-topped surface is reconstructed. A model of alternating Si dimers is suggested for this surface.

  12. About the Nature of Electroluminescence Centers in Plastically Deformed Crystals of p-type Silicon

    Directory of Open Access Journals (Sweden)

    B.V. Pavlyk

    2015-10-01

    Full Text Available The paper describes research of dislocation electroluminescence of single crystal p-type silicon with a high concentration of dislocations on the surface (111. It is shown the reaction of the luminescence spectra and capacitive-modulation spectra of samples after high-temperature annealing in an atmosphere of flowing oxygen. The analysis of the results lets us to establish the nature of recombination centers and their reorganization under high-temperature annealing. It is shown that deposition of Al film on the substrate p-Si leads to the formation of strain capacity and the localization of defects in the surface layer that corresponds to luminescence centers.

  13. Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

    NARCIS (Netherlands)

    Palasantzas, G; Ilge, B; De Nijs, J

    1999-01-01

    We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithography on the hydrogen-passivated surface, combined with vapor deposition of Co at room temperature and subsequent annealing. The STM tip was used to def

  14. Fluorinated saccharides on the Si(0 0 1) surface

    Science.gov (United States)

    Szwajca, Anna; Rapp, Magdalena; Bilska, Monika; Krzywiecki, Maciej; Koroniak, Henryk

    2013-06-01

    The attachment of saccharide molecules directly to silicon surface has been for the first time. Oxygen free silicon surface was functionalized with monosacharides thanks to UV irradiation in acetonitryl solution (254 nm). Selected derivatives of pentofuranose were protected at the C-1 and C-2 position. The remaining hydroxyl group at C-3 or C-5 was suitable for direct attachment to H-terminated Si(0 0 1) surface via Sisbnd Osbnd C bonds. The binding energy of the saccharide to the Si surface was investigated by quantum mechanical calculations method. The Parametric Method 5 (PM5) calculations confirmed that the formation of Sisbnd Osbnd C bonds was chemically possible. Synthesis of new fluorinated carbohydrates has been described. The resulting monolayers were characterized by Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Attenuated Total Reflection (ATR) infrared spectroscopy. The effect of incorporating fluorine atom or CF3 group into self-assembled monosaccharide monolayers was studied using a water contact angle measurements. The resulting surface wettability of different fluorinated components on one kind of planar substrate enables an answer which of derivative is required for the preparation of the hydrophobic monolayer.

  15. In-induced stable ordering of stepped Si(553) surface

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Amit Kumar Singh [Physics of Energy Harvesting, (CSIR-NPL) , Dr. K.S. KrishnanRoad, New Delhi -110012 (India); Department of Physics, JMI, New Delhi 110025 (India); Niazi, Asad; Nair, Lekha [Department of Physics, JMI, New Delhi 110025 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting, (CSIR-NPL) , Dr. K.S. KrishnanRoad, New Delhi -110012 (India)

    2015-05-15

    Highlights: • Control growth of In on step Si(553) & thermal stability of novel superstructure. • Influence of temperature on growth modes (SK,VB) under different growth conditions. • In-induced superstructure: (8 × 2), (8 × 4), mixed (553)-7 × 1 + (111)√3 × √3R30° phases. - Abstract: The growth mechanism and adsorbate-induced surface morphology of metal atoms on semiconducting surfaces crucially determines the electronic and physicochemical properties of these metal/semiconductor systems. In this study, we investigate the kinetically controlled growth of indium (In) atoms on the high index stepped Si(553)-7 × 7 surface and the thermal stability of various novel In-induced superstructural phases formed during adsorption/desorption process. Auger electron spectroscopy analysis reveals that In adsorption at room temperature (RT) and at 350 °C, with a controlled incident flux of 0.0016 ML/s, proceeds in the Stranski–Krastanov growth mode where two dimensional (2D)/three dimensional (3D) islands are formed on top of two complete monolayers. At higher substrate temperature up to 450 °C, the growth of In atoms occurs in the form of islands on the bare Si(553) surface, and In coverage is limited to the sub-monolayer regime. During the thermal desorption of the RT grown In/Si(553) system, the In clusters rearrange themselves and an unusual “cluster to layer” transformation occurs on top of the stable monolayer. In situ low energy electron diffraction analysis during adsorption and desorption shows the development of various coverage and temperature dependent In-induced superstructural phases on Si(553) surface, such as: (8 × 2) after annealing at 520 °C with coverage 0.5 ML, (8 × 4) after annealing at 580 °C (∼1 ML coverage) and (553)-7 × 1 + (111)-√3 × √3-R30° at 0.3 ML (630 °C). These adsorbate-induced superstructural phases could potentially be utilized as templates for pattern assisted growth of various exotic 1D/2D structures for

  16. Molecular modeling of alkyl monolayers on the Si (100)-2 x 1 surface

    NARCIS (Netherlands)

    Lee, M.V.; Guo, D.; Linford, M.R.; Zuilhof, H.

    2004-01-01

    Molecular modeling was used to simulate various surfaces derived from the addition of 1-alkenes and 1-alkynes to Si=Si dimers on the Si(100)-2 × 1 surface. The primary aim was to better understand the interactions between adsorbates on the surface and distortions of the underlying silicon crystal du

  17. Equilibrium and kinetic Si isotope fractionation factors and their implications on Si isotope distributions in the Earth's surface environments

    Science.gov (United States)

    Tang, M.; Zhang, S.; Liu, Y.

    2015-12-01

    Several important equilibrium Si isotope fractionation factors among minerals, organic molecules and the H4SiO4 solution are complemented to facilitate explanation of distributions of Si isotope in the Earth's surface environments. The results reveal that heavy Si isotopes will be significantly enriched in the secondary silicate minerals in comparison to aqueous H4SiO4. On the contrary, quadra-coordinated organosilicon complexes are enriched in light silicon isotope relative to the solution. The extent of 28Si-enrichment in hyper-coordinated organosilicon complexes is found the largest. In addition, the large kinetic isotope effect associated with the polymerization of monosilicic acid and dimer is calculated and the result supports previous statement that highly 28Si-enrichment in the formation of amorphous quartz precursor contributes to the discrepancy between theoretical calculations and field observations. With equilibrium Si isotope fractionation factors provided here, Si isotope distributions in many surface systems of the Earth can be explained. For example, the change of bulk soil δ30Si can be predicted as a concave pattern with respect to weathering degree, with the minimum value where allophane completely dissolves and the total amount of sesqui-oxides and poorly crystalline minerals reaches its maximum. When well-crystallized clays start to precipitate from pore solutions under equilibrium conditions, the bulk soil δ30Si will increase again and reach a constant value. Similarly, the precipitation of crystalline smectite and the dissolution of poorly crystalline kaolinite may explain δ30Si variations in the ground water profile. Equilibrium Si isotope fractionations among quadra-coordinated organosilicon complexes and the H4SiO4 solution may also shed the light on the Si isotope distributions in Si-accumulating plants.

  18. The surface morphologies of (Pb, Sr) TiO3 thin film fabricated on Si-buffered Pt/Ti/SiO2/Si substrate

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    (Pb, Sr)TiO3 (PST) thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with different buffer layer deposition time. Surface morphologies of the buffer layer indicate an improving surface roughness and larger grains with the prolongation of sputtering time. Deposition of PST thin films shows excellent surface fluctuation filling ability to improve the surface roughness of substrates. PST surface morphologies exhibit apparently different grain forms according to the preparation time durance of buffer layer.

  19. Compositional effects on Si3N4 fracture surfaces

    Science.gov (United States)

    Hench, L. L.; Ohuchi, F.; Vaidyanathan, P. N.; Dutta, S.

    1983-01-01

    Surface analysis techniques (X-ray, infrared reflection spectroscopy, Auger electron spectroscopy) applied to the same samples reveal that fracture surfaces of Si3N4 with Y2O3 densification aids possess a higher concentration of oxygen than the bulk. The oxide densification aids thus concentrate in the grain boundaries, and even low-temperature fracture is seen as occurring preferentially within the oxygen-enriched grain boundaries. It is found that increasing the concentrations of Y2O3 and Al2O3 increases the oxygen content of the fracture surface. A range of 13-15 percent Y2O3 + 6 percent Al2O3 gives an amorphous grain-boundary phase that is resistant to devitrification. Fracture occurs through the amorphous phase, and heat treatment at 1000 C has little effect on the amorphous phase.

  20. Infrared reflection absorption study of water interaction with H-terminated Si(100) surfaces

    Indian Academy of Sciences (India)

    G Ranga Rao

    2004-12-01

    Water adsorption on clean and hydrogenated Si(100) surfaces was studied under ultra high vacuum conditions using surface infrared spectroscopy. The study shows that H–Si–Si–OH and SiH2 species are formed on Si(100)–(2 × 1) and Si(100)–(2 × 1)–H surfaces, respectively. The reactivity behaviour of Si(100)–(3 × 1)–H and Si(100)–(1 × 1)–H is similar, both stabilizing oxygen inserted silicon dihydrides.

  1. Critical Temperature Programs for Surface Carbonization of Si(111) and Their Effects on 3C-SiC Film Growth

    Science.gov (United States)

    Giang Nguyen, Nam; Liu, Chie-Sheng; Hu, Ming-Shien; Hong, Lu-Sheng

    2013-08-01

    We have studies of the changes in the surface states of carbonized Si(111) substrates treated under various temperature programs prior to high-temperature 3C-SiC film growth in a low pressure chemical vapor deposition system using SiH4, C2H2, and H2 as reactant gases. The carbonized Si surface underwent a change in bonding from SiC to disordered graphite, together with the formation of etch pits, when heated directly from the carbonization temperature of 1343 K to the growth temperature of 1523 K under a H2 flow over a period of 5 min; this transformation deteriorated the quality of the subsequent 3C-SiC growth. In contrast, a void-free stoichiometric SiC surface was preserved when we inserted a rapid cooling step, to near room temperature, under a H2 flow of 352 sccm within a period of 15 min after shutting off the C2H2 gas flow at the end of the surface carbonization process. The sharp temperature decrease in this program sealed off the carbonized substrate surface and, thus, led to a high film quality for subsequent 3C-SiC(111) growth.

  2. Self-activated, self-limiting reactions on Si surfaces

    DEFF Research Database (Denmark)

    Morgen, Per; Hvam, Jeanette; Bahari, Ali

    The direct thermally activated reactions of oxygen and ammonia with Si surfaces in furnaces have been used for a very long time in the semiconductor industry for the growth of thick oxides and nitride layers respectively. The oxidation mechanism was described in the Deal-Grove model as a diffusion...... limited transport of oxygen to the oxide/silicon interface. For thin oxides the deal-Grove growth rate is initially constant, but for ultrathin oxides (a couple of nm thick) this is not true and the Deal-Grove model does not explain the mechanism. In a series of recent reports we have found a new...

  3. FTIR-ATR analysis of SiC(000 anti 1) and SiC(0001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchida, H.; Kamata, I.; Izumi, K. [Central Research Inst. of Electric Power Industry, Yokosuka (Japan)

    1998-06-01

    Recently developed SiC wafers with large diameter have been utilized to investigate the chemical state of the SiC surfaces by Fourier-transformed infrared attenuated total reflection (FTIR-ATR) spectroscopy with high sensitivity. The ex-situ ATR spectroscopy equipped with a Ge prism was used to study the chemisorbed species on 6H-SiC(000 anti 1) and (0001) surface after the chemical treatment and after the heat treatment in hydrogen. We obtained clear absorption bands attributable to hydrides on the surfaces. The polarity dependencies of Si-H and C-H stretch modes between the 6H-SiC(000 anti 1) and (0001) were discussed. (orig.) 10 refs.

  4. Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST Thin Film Doped with Ferric Oxide on p-type Si (100 Substrate using Chemical Solution Deposition Method

    Directory of Open Access Journals (Sweden)

    Irzaman

    2011-12-01

    Full Text Available In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST and BST doped by Ferric Oxide Fe2O3 (BFST with doping variations of 5%, 10%, and 15% above type-p Silicon (100 substrate using the chemical solution deposition (CSD method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850OC for the Si (100 substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15 % of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003

  5. Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films

    Science.gov (United States)

    Utsumi, Jun; Ide, Kensuke; Ichiyanagi, Yuko

    2016-02-01

    The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m2, and the bonding strength was more than 25 MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer.

  6. Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si sub 1 sub - sub x Ge sub x channel grown by SS-MBE on Si sub 1 sub - sub y Ge sub y /Si(001) virtual substrates

    CERN Document Server

    Myronov, M

    2001-01-01

    sub 4 Ge sub 0 sub . sub 6 linearly graded VS and corresponds to 14855cm sup 2 centre dot V sup - sup 1 centre dot s sup - sup 1 (2.87 centre dot 10 sup 1 sup 2 cm sup - sup 2). The highest Hall mobility (at sheet carrier density) measured at 293K was observed for Si sub 0 sub . sub 2 Ge sub 0 sub . sub 8 /Si sub 0 sub . sub 6 sub 5 Ge sub 0 sub . sub 3 sub 5 heterostructure after FTA at 750C for 30min and corresponds to 1776cm sup 2 centre dot V sup - sup 1 centre dot s sup - sup 1 (2.37 centre dot 10 sup 1 sup 3 cm sup - sup 2). To extract the drift mobility and sheet carrier density of 2DHG at temperatures up to 300K, magnetotransport measurements in magnetic fields up to 11T were performed on several heterostructures. The data were analyzed by technique of Maximum-Entropy Mobility Spectrum Analysis. The highest drift mobility (at sheet carrier density) of 2DHG at 290K was obtained for the Si sub 0 sub . sub 2 Ge sub 0 sub . sub 8 /Si sub 0 sub . sub 6 sub 5 Ge sub 0 sub . sub 3 sub 5 heterostructure after...

  7. Influence of O 2 and oxide on Cl/Si surface reactions

    Science.gov (United States)

    Aoto, Nahomi; Ikawa, Eiji; Kikkawa, Takamaro; Kurogi, Yukinori

    1991-05-01

    Variation of Si(111) and Si(100) surface conditions under sequential Cl 2 exposure, O 2 exposure, and other O-related treatments are examined by Auger electron spectroscopy (AES) and low-energy electron energy loss spectroscopy (LEELS). Cl-adsorbed Si surfaces, particularly Cl-adsorbed Si(111) surfaces, have a passivation effect under dry O 2 atmosphere, where O adsorption and oxidation are suppressed. On the other hand, Cl desorption and oxidation take place immediately on Cl-adsorbed surfaces when exposed to wet environments: humid clean-room air or de-ionized water. When O 2-treated Si surfaces are exposed to Cl 2 atmospheres, Cl adsorption occurs on SiO x but not on SiO 2.

  8. Effects of surface oxide species and contents on SiC slurry viscosity

    Institute of Scientific and Technical Information of China (English)

    NING Shufan; LI Hongyan; CHEN Wei; LIU Bin; CHEN Shoutian

    2005-01-01

    The disadvantageous effects of colloidal SiO2 layer and micro-content of metal oxide adsorbed on SiC powder surface on SiC slurry stable dispersion were studied, and the novel method to avoid this disadvantage was proposed. By acidwashing, on the one hand, because the maximum Zeta potential of SiC powder increases to 72.49 mV with the decreasing content of metal oxide adsorbed on the SiC powder surface, the repulsion force between SiC powders that dispersed in slurry is enhanced, thus the SiC powder can be fully dispersed in slurry. On the other hand, after HF acidwashing, with the OH- group adsorbed on SiC powder surface destroyed and replaced by the F- ion, the hydrogen bond adsorbed on the OH-group is also destroyed. Therefore, the surface property of the SiC powder is changed from hydrophilic to hydrophobic;H2O that adsorbed on SiC powder surface is released and can flow freely, and it actually increases the content of the effective flow phase in the slurry. These changes of SiC powder surface property can be proved by XPS and FTIR analysis. Fivolume fraction of SiC powder in the slurry is maximized to 61.5 vol.%.

  9. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4 and SiO2

    Science.gov (United States)

    Liu, Li-Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D.; Zuilhof, Han; Chabal, Yves J.

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  10. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

    Science.gov (United States)

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-09

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  11. Influence of SiC surface polarity on the wettability and reactivity in an Al/SiC system

    Science.gov (United States)

    Shen, Ping; Wang, Yi; Ren, Lihua; Li, Shixin; Liu, Yuhua; Jiang, Qichuan

    2015-11-01

    The wetting of (0 0 0 1) 6H-SiC single crystals by molten Al was investigated using a dispensed sessile drop method in a high vacuum at 973-1173 K. The wettability and reactivity in this system are sensitive to the surface polarity of SiC. The interfacial reaction on the Si-terminated surface is rapid. The formation of a continuous Al4C3 product layer at the interface leads to an equilibrium contact angle of 56 ± 1° at 1173 K. In comparison, the interfacial reaction on the C-terminated surface is sluggish. The interface is only partially covered by discrete Al4C3 platelets even after dwelling at 1173 K for 2 h. The final wettability, however, is much better (θF = 41 ± 1°) than that of the Si-terminated surface which was covered by a dense Al4C3 layer, suggesting that the formation of Al4C3 should not always contribute to the wetting in the Al/SiC system. A plausible explanation is that the clean (i.e., deoxidized) C-terminated surface should be well wetted by molten Al in nature, owing to the strong chemical interactions between liquid Al and the surface atoms of the C-terminated SiC. It is likely that the presence of the oxide film at the surface of the molten Al drop or the SiC substrate and the rapid formation of Al4C3, which prevent the establishment of a real Al/SiC interface, conceal the intrinsic wettability of this system.

  12. Electrical transport properties of graphene on SiO2 with specific surface structures

    OpenAIRE

    Nagashio, K.; Yamashita, T; Nishimura, T.; K. Kita; Toriumi, A.

    2011-01-01

    The mobility of graphene transferred on a SiO2/Si substrate is limited to ~10,000 cm2/Vs. Without understanding the graphene/SiO2 interaction, it is difficult to improve the electrical transport properties. Although surface structures on SiO2 such as silanol and siloxane groups are recognized, the relation between the surface treatment of SiO2 and graphene characteristics has not yet been elucidated. This paper discusses the electrical transport properties of graphene on specific surface stru...

  13. Influence of SiC surface polarity on the wettability and reactivity in an Al/SiC system

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Ping, E-mail: shenping@jlu.edu.cn [Key Laboratory of Automobile Materials (Ministry of Education), School of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun 130025 (China); Wang, Yi [Key Laboratory of Automobile Materials (Ministry of Education), School of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun 130025 (China); Ren, Lihua; Li, Shixin [Nuclear and radiation safety center, No. 54 Hongliannancun, Haidian District, Beijing 100082 (China); Liu, Yuhua; Jiang, Qichuan [Key Laboratory of Automobile Materials (Ministry of Education), School of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun 130025 (China)

    2015-11-15

    Graphical abstract: - Highlights: • The wettability and reactivity are sensitive to the surface polarity of SiC. • In comparison, the reaction at the Si-terminated surface is much stronger and faster. • The intrinsic wettability between clean Al and clean SiC could be fairly good. • The formation of Al{sub 4}C{sub 3} might not essentially promote the wettability. - Abstract: The wetting of (0 0 0 1) 6H-SiC single crystals by molten Al was investigated using a dispensed sessile drop method in a high vacuum at 973–1173 K. The wettability and reactivity in this system are sensitive to the surface polarity of SiC. The interfacial reaction on the Si-terminated surface is rapid. The formation of a continuous Al{sub 4}C{sub 3} product layer at the interface leads to an equilibrium contact angle of 56 ± 1° at 1173 K. In comparison, the interfacial reaction on the C-terminated surface is sluggish. The interface is only partially covered by discrete Al{sub 4}C{sub 3} platelets even after dwelling at 1173 K for 2 h. The final wettability, however, is much better (θ{sub F} = 41 ± 1°) than that of the Si-terminated surface which was covered by a dense Al{sub 4}C{sub 3} layer, suggesting that the formation of Al{sub 4}C{sub 3} should not always contribute to the wetting in the Al/SiC system. A plausible explanation is that the clean (i.e., deoxidized) C-terminated surface should be well wetted by molten Al in nature, owing to the strong chemical interactions between liquid Al and the surface atoms of the C-terminated SiC. It is likely that the presence of the oxide film at the surface of the molten Al drop or the SiC substrate and the rapid formation of Al{sub 4}C{sub 3}, which prevent the establishment of a real Al/SiC interface, conceal the intrinsic wettability of this system.

  14. Effect of Annealing Temperature on the Formation of Silicides and the Surface Morphologies of PtSi Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The effect of annealing temperature on the formation of the PtSi phase, distribution of silicides and the surface morphologies of silicides films is investigated by XPS, AFM. It is shown that the phase sequences of the films change from Pt-Pt2Si-PtSi-Si to Pt+Pt2Si+PtSi-PtSi-Si or Pt+Pt2Si+PtSi-PtSi-Si with an increase of annealing temperature and the reason for the formation of mixed layers is discussed.

  15. Passivation of Si and a-Si:H surfaces by thin oxide and oxy-nitride layers

    Energy Technology Data Exchange (ETDEWEB)

    Pincik, E. [Institute of Physics of SAS, Dubravska Cesta 9, 845 11 Bratislava (Slovakia)]. E-mail: emil.pincik@savba.sk; Kobayashi, H. [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Organizarion, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Rusnak, J. [Institute of Physics of SAS, Dubravska Cesta 9, 845 11 Bratislava (Slovakia); Takahashi, M. [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Organizarion, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Brunner, R. [Institute of Physics of SAS, Dubravska Cesta 9, 845 11 Bratislava (Slovakia); Jergel, M. [Institute of Physics of SAS, Dubravska Cesta 9, 845 11 Bratislava (Slovakia); Morales-Acevedo, A. [CINVESTAV-IPN, Electrical Engineering Departmant, Avenida IPN No. 2508, 07360 Mexico, D.F. (Mexico); Ortega, L. [Laboratoire de Cristallographie du CNRS, BP 166, 38042 Grenoble Cedex 09 (France); Kakos, J. [Department of Ceramics, Glass and Cement of FCFT of SUT, Radlinskeho 9, 812 37 Bratislava (Slovakia)

    2006-08-31

    An aim of the contribution is focused predominantly on investigation of electrical interface properties of MIS structures consisting of silicon-based substrates, which were passivated by 1.5-12 nm silicon dioxide, silicon nitride and/or silicon oxy-nitride layers. Substrates of different structural properties were used-crystalline Si (c-Si), amorphous hydrogenated silicon (a-Si:H), and silicon layer deposited by plasma enhanced chemical vapor deposition (PECVD). A stress was laid upon structures prepared on n moderately doped c-Si. The paper presents also changes of structural properties of a-Si:H surface after Ar low energy beam impact. For the first time we are presenting important results concerning utilization of X-ray diffraction with {beta} filter in investigation of a-Si:H cluster structure. Considerable part of the contribution is devoted to investigation of electrical properties of Al/Si{sub 3}N{sub 4}/Si (2-3 nm)/GaAs structures with aim to clarify the particular effect of the ultrathin Si interlayer in the structure. Our observations indicate that the silicon interlayer can act as delta doping of GaAs and/or as quantum well. Therefore, the experimental results are compared and discussed with calculated ones obtained by application of our theoretical description of electron emission of quantum well.

  16. Dynamic Deposition of Nanocopper Film on the β-SiCp Surface by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Hu Ming

    2015-01-01

    Full Text Available The uniform nanocopper film was deposited on the surface of micron β-SiC particle by magnetron sputtering technology successfully. The surface morphology and phase constitution of the β-SiC particle with nanocopper film were analyzed and dynamic deposition behavior was investigated in detail. The concept of dynamic deposition was put forward to interpret formation mechanism of copper nanofilm on the surface of β-SiC particles.

  17. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  18. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  19. DFT Investigations About Pyrazine Molecules on Si(100)-2×1 Surface

    Institute of Scientific and Technical Information of China (English)

    YU Ang-yang; QU Yong-quan; HAN Ke-li; HE Guo-zhong

    2007-01-01

    It is important to understand the interface of aromatic molecules on semiconductor surfaces because of the rich functionality of such molecules on semiconductor surfaces. The chemisorption of pyrazine molecules on the Si( 100)-2×1 surface has been investigated using the B3LYP density functional theory with Si9H12 one-dimer and Si15H16 twodimer cluster models. The calculated results predict that N-dative bonded-state, C2= C5 [ 4 + 2 ] and the tightbridge1, 2, 5,6 products may coexist on the Si(100)-2×1 surface.

  20. Adsorption of oxygen atom on MoSi{sub 2} (110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sun, S.P., E-mail: sunshunping@jsut.edu.cn [School of Materials Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Li, X.P.; Wang, H.J. [School of Materials Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Jiang, Y., E-mail: yjiang@csu.edu.cn [School of Materials Science and Engineering, and Key Laboratory for Non-ferrous Materials of Ministry of Education, Central South University, Changsha 410083 (China); Yi, D.Q. [School of Materials Science and Engineering, and Key Laboratory for Non-ferrous Materials of Ministry of Education, Central South University, Changsha 410083 (China)

    2016-09-30

    Highlights: • The adsorption of oxygen atom on MoSi{sub 2} (110) surface was studied systematically. • The stability of MoSi{sub 2} low-index surfaces was also investigated. • The preference adsorption site of MoSi{sub 2} (110) surface for oxygen atom was H site. - Abstract: The adsorption energy, structural relaxation and electronic properties of oxygen atom on MoSi{sub 2} (110) surface have been investigated by first-principles calculations. The energetic stability of MoSi{sub 2} low-index surfaces was analyzed, and the results suggested that MoSi{sub 2} (110) surface had energetically stability. The site of oxygen atom adsorbed on MoSi{sub 2} (110) surface were discussed, and the results indicated that the preference adsorption site of MoSi{sub 2} (110) surface for oxygen atom was H site (hollow position). Our calculated work should help to understand further the interaction between oxygen atoms and MoSi{sub 2} surfaces.

  1. Low temperature diffusion of Li atoms into Si nanoparticles and surfaces

    Science.gov (United States)

    Nienhaus, Hermann; Karacuban, Hatice; Krix, David; Becker, Felix; Hagemann, Ulrich; Steeger, Doris; Bywalez, Robert; Schulz, Christof; Wiggers, Hartmut

    2013-07-01

    The diffusion of Li atoms deposited on hydrogen-passivated Si(001) surfaces, chemically oxidized Si(001) surfaces, Si nanoparticle films, and thick SiO2 layers is investigated with electron-beam induced Auger electron spectroscopy. The nanoparticles exhibit an average diameter of 24 nm. The Li metal film is evaporated at a sample temperature below 120 K. The reappearance of the Si substrate Auger signal as a function of time and temperature can be measured to study the Li diffusion into the bulk material. Values for the diffusion barrier of 0.5 eV for H:Si(001) and 0.3 eV for the ox-Si(001) and Si nanoparticle films are obtained. The diffusion of the Li atoms results in the disruption of the crystalline Si surfaces observed with atomic force microscopy. Contrasting to that, the Si nanoparticle films show less disruption by Li diffusion due to filling of the porous films detected with cross section electron microscopy. Silicon dioxide acts as a diffusion barrier for temperatures up to 300 K. However, the electron beam induces a reaction between Li and SiO2, leading to LiOx and elemental Si floating on the surface.

  2. Theoretical Investigation on the Adsorption of Ag+ and Hydrated Ag+ Cations on Clean Si(111)Surface

    Institute of Scientific and Technical Information of China (English)

    SHENG Yong-Li; LI Meng-Hua; WANG Zhi-Guo; LIU Yong-Jun

    2008-01-01

    In this paper,the adsorption of Ag+ and hydrated Ag+ cations on clean Si(111)surface were investigated by using cluster(Gaussian 03)and periodic(DMol3)ab initio calculations.Si(111)surface was described with cluster models(Si14H17 and Si22H21)and a four-silicon layer slab with periodic boundary conditions.The effect of basis set superposition error(BSSE)was taken into account by applying the counterpoise correction.The calculated results indicated that the binding energies between hydrated Ag+ cations and clean Si(111)surface are large,suggesting a strong interaction between hydrated Ag+ cations and the semiconductor surface.With the increase of number,water molecules form hydrogen bond network with one another and only one water molecule binds directly to the Ag+ cation.The Ag+ cation in aqueous solution will safely attach to the clean Si(111)surface.

  3. Comparative Investigation of Mo(CO)6 Adsorption on Clean and Oxidized Si(111) Surfaces

    Institute of Scientific and Technical Information of China (English)

    Zhi-quan Jiang; Wei-xin Huang

    2011-01-01

    Mo(CO)6 adsorption on the clean,oxygen-precovered and deeply oxidized Si(lll) surfaces was comparatively investigated by high-resolution electron energy loss spectroscopy.The downward vibrational frequency shift of the C-O stretching mode in adsorbed Mo(CO)6 illustrates that different interactions of adsorbed Mo(CO)6 occur on clean Si(lll) and SiO2/Si(lll) surfaces,weak on the former and strong on the latter.The strong interaction on SiO2/Si(111) might lead to the partial dissociation of Mo(CO)6,consequently the formation of molybdenum subcarbonyls.Therefore,employing Mo(CO)6 as the precursor,metallic molybdenum could be successfully deposited on the SiO2/Si(111) surface but not on the clean Si(111) surface.A portion of the deposited metallic molybdenum is transformed into the MoO3 on the SiO2/Si(111) surface upon heating,and the evolved MoO3 finally desorbs from the substrate upon annealing at elevated temperatures.

  4. A computational study on the adsorption configurations and reactions of SiHx(x = 1-4) on clean and H-covered Si(100) surfaces

    Science.gov (United States)

    Le, Thong N.-M.; Raghunath, P.; Huynh, Lam K.; Lin, M. C.

    2016-11-01

    Possible adsorption configurations of H and SiHx (x = 1 - 4) on clean and H-covered Si(100) surfaces are determined by using spin-polarized DFT calculations. The results show that, on the clean surface, the gas-phase hydrogen atom and SiH3 radicals effectively adsorb on the top sites, while SiH and SiH2 prefer the bridge sites of the first layer. Another possibility for SiH is to reside on the hollow sites with a triple-bond configuration. For a partially H-coverd Si(100) surface, the mechanism is similar but with higher adsorption energies in most cases. This suggests that the surface species become more stable in the presence of surface hydrogens. The minimum energy paths for the adsorption/migration and reactions of H/SiHx species on the surfaces are explored using the climbing image-nudged elastic band method. The competitive surface processes for Si thin-film formation from SiHx precursors are also predicted. The study reveals that the migration of hydrogen adatom is unimportant with respect to leaving open surface sites because of its high barriers (>29.0 kcal/mol). Alternatively, the abstraction of hydrogen adatoms by H/SiHx radicals is more favorable. Moreover, the removal of hydrogen atoms from adsorbed SiHx, an essential step for forming Si layers, is dominated by abstraction rather than the decomposition processes.

  5. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    Science.gov (United States)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  6. Semiconducting electronic property of graphene adsorbed on (0001) surfaces of SiO2.

    Science.gov (United States)

    Nguyen, Thanh Cuong; Otani, Minoru; Okada, Susumu

    2011-03-11

    First-principles total energy calculations are performed to investigate the energetics and electronic structures of graphene adsorbed on both an oxygen-terminated SiO2 (0001) surface and a fully hydroxylated SiO2 (0001) surface. We find that there are several stable adsorption sites for graphene on both O-terminated and hydroxylated SiO2 surfaces. The binding energy in the most stable geometry is found to be 15 meV per C atom, indicating a weak interaction between graphene and SiO2 (0001) surfaces. We also find that the graphene adsorbed on SiO2 is a semiconductor irrespective of the adsorption arrangement due to the variation of on-site energy induced by the SiO2 substrate.

  7. Doping of graphene adsorbed on the a-SiO$_2$ surface

    OpenAIRE

    Miwa, R. H.; Schmidt, T. M.; Fazzio, A.

    2011-01-01

    We have performed an {\\it ab initio} theoretical investigation of graphene sheet adsorbed on amorphous SiO$_2$ surface (G/a-SiO$_2$). We find that graphene adsorbs on the a-SiO$_2$ surface through van der Waals interactions. The inhomogeneous topology of the a-SiO$_2$ clean surface promotes a total charge density displacement on the adsorbed graphene sheet, giving rise to electron-rich as well as hole-rich regions on the graphene. Such anisotropic distribution of the charge density may contri...

  8. Semiconducting Electronic Property of Graphene Adsorbed on (0001) Surfaces of SiO2

    OpenAIRE

    Cuong, Nguyen Thanh; Otani, Minoru; Okada, Susumu

    2011-01-01

    First-principles total energy calculations are performed to investigate the energetics and electronic structures of graphene adsorbed on both an oxygen-terminated SiO2 (0001) surface and a fully hydroxylated SiO2 (0001) surface. We find that there are several stable adsorption sites for graphene on both O-terminated and hydroxylated SiO2 surfaces. The binding energy in the most stable geometry is found to be 15 meV per C atom, indicating a weak interaction between graphene and SiO2 (0001) sur...

  9. Two-dimensional evaluation of 3D needled Cf/SiC composite fiber bundle surface

    Science.gov (United States)

    Wei, Jinhua; Lin, Bin; Cao, Xiaoyan; Zhang, Xiaofeng; Fang, Sheng

    2015-11-01

    The variations of fiber bundle surface microstructure have direct influence on the material performance, especially the friction and wear properties. Therefore, fiber bundle is the smallest evaluation unit of Cf/SiC composite surface. However, due to the anisotropy and inhomogeneity of Cf/SiC composite, it is difficult to evaluate the surface characteristics. Researchers think that two-dimensional evaluation is not suitable for the composites surface assessment any more because of its complex composition and varied surface structure. In this paper, a novel method is introduced for the evaluation of 3D needled Cf/SiC composite fiber bundle surface. On the level of Cf/SiC composite fiber bundle surface, two-dimensional evaluation method is adopted, with which the fiber bundle surface quality can be quantitatively evaluated by the two-dimensional surface roughness Ra. As long as the extracted surface profiles averagely distributed on Cf/SiC composite fiber bundle surface, with appropriate sampling length and sampling number, the mean value of Ra can estimate the whole surface roughness, thus reflecting the roughness degree of surface accurately. This study not only benefits the detection of 3D needled Cf/SiC composite fiber bundle surface quality, and lays a foundation on the evaluation of material functional features in further. And it corresponds to the convenient application in engineering practice.

  10. Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Konstantin

    2009-10-21

    The present work describes an experimental investigation of the influence of the step properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were carried out by scanning tunneling microscopy (STM). The formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces is demonstrated. The crystalline nanowires with minimal kink densities were grown using Bi surfactant mediated epitaxy. The nanowires extend over lengths larger than 1 {mu}m have a width of 4 nm. To achieve the desired growth conditions for the formation of such nanowire arrays, a modified variant of surfactant mediated epitaxy was explored. It was shown that controlling the surfactant coverage at the surface and/or at step edges modifies the growth properties of surface steps in a decisive way. The surfactant coverage at step edges can be associated with Bi passivation of the step edges. The analysis of island size distributions showed that the step edge passivation can be tuned independently by substrate temperature and by Bi rate deposition. The measurements of the island size distributions for Si and Ge in surfactant mediated growth reveal different scaling functions for different Bi deposition rates on Bi terminated Si(111) surface. The scaling function changes also with temperature. The main mechanism, which results in the difference of the scaling functions can be revealed with data of Kinetic Monte-Carlo simulations. According to the data of the Si island size distributions at different growth temperatures and different Bi deposition rates the change of SiGe island shape and preferred step directions were attributed to the change of the step edge passivation. It was shown that the change of the step edge passivation is followed by a change of the

  11. Enzymatic activity induced by interactions with a nanofabricated hydrophobic Si surface

    Science.gov (United States)

    Nishiyama, Katsuhiko

    2013-07-01

    The binding of peptides of 2-10 glycine residues (2-10Gly) to papain on nanofabricated hydrophobic Si surfaces was investigated by molecular dynamics and docking simulations. 5Gly, 7Gly, 9Gly, and 10Gly were distributed on sites near the active center of papain on the Si surface, while 6-10Gly were distributed on sites near the active center of free papain. The Si surface changed the substrate specificity of papain, and modification of this surface should allow full control of substrate specificity. Molecular surgery of proteins in cells may be realized using papain on specially designed surfaces.

  12. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide - Selective functionalization of Si

    NARCIS (Netherlands)

    Liu, Li Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Zuilhof, Han

    2016-01-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be careful

  13. Surface conduction at phase transitions in (Au,Ag)/Si(1 1 1) submonolayer films

    Energy Technology Data Exchange (ETDEWEB)

    Tsukanov, D.A., E-mail: tsukanov@iacp.dvo.ru [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Vladivostok 690950 (Russian Federation); Ryzhkova, M.V.; Borisenko, E.A. [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); Bondarenko, L.V.; Matetskiy, A.V.; Gruznev, D.V. [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Vladivostok 690950 (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Vladivostok 690950 (Russian Federation); Vladivostok State University of Economics and Service, Vladivostok 690600 (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Vladivostok 690950 (Russian Federation)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer Structural reordering occurs upon Ag adsorption onto Si(1 1 1){alpha}-{radical}3 Multiplication-Sign {radical}3-Au surface phase at 350 Degree-Sign C. Black-Right-Pointing-Pointer The new surface structure identified as Si(1 1 1){radical}93 Multiplication-Sign {radical}93-(Au,Ag) has been found by LEED and STM. Black-Right-Pointing-Pointer Electrical conductivity of various (Au,Ag)/Si(1 1 1) nanostructures has been characterized. - Abstract: Surface structure and electrical conductance of the (Au,Ag)/Si(1 1 1) two-dimensional system have been studied in situ with low-energy electron diffraction, scanning tunneling microscopy and four-point probe technique. The new surface structure identified as Si(1 1 1){radical}93 Multiplication-Sign {radical}93-(Au,Ag) has been found to form upon deposition of {approx}0.1 ML of Ag onto Si(1 1 1){alpha}-{radical}3 Multiplication-Sign {radical}3-Au surface held at 350 Degree-Sign C. With further Ag deposition at this growth temperature, the surface structure evolves to Si(1 1 1)2{radical}3 Multiplication-Sign 2{radical}3 and eventually to Si(1 1 1){radical}21 Multiplication-Sign {radical}21. Structural transformations have been found to be accompanied by non-monotonous changeover of the surface conductance. Possible factors affecting the surface conductivity are discussed.

  14. The surface potential of the Si nanostructure on a Si (1 1 1) 7x7 surface generated by contact of a cantilever tip

    Energy Technology Data Exchange (ETDEWEB)

    Shiota, T.; Nakayama, K

    2002-12-30

    A Si microstructure on a Si (1 1 1) 7x7 surface was investigated by a noncontact atomic force microscopy (ncAFM) and a scanning Kelvin probe microscopy (SKPM) in ultra high vacuum. The Si microstructure was generated by intermittent contact of a cantilever tip. It was found by the ncAFM and SKPM observations that the Si mound with a height of 1 A and a width of 30 nm was generated, and the surface potential of the small mound was 0.1 V lower than that of the 7x7 domain. A quenched Si (1 1 1) surface was also observed by the ncAFM and SKPM. The differences in height and potential between the reconstructed 7x7 and the disordered 1x1 domains were about 1 A and 0.1 V, respectively. Therefore, it was concluded that there appeared the disordered 1x1 structure on the surface of the Si small mound, lowering the surface potential by 0.1 V.

  15. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-09-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m.

  16. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction.

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-09-22

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm(2)) at 75.7 MV/m.

  17. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-01-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m. PMID:27654068

  18. Adsorption and reaction of silver on an oxidized Si(0 0 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, S., E-mail: sohno@ynu.ac.jp [Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501 (Japan); Tanaka, H. [Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501 (Japan); Takahashi, K.; Kamada, M. [Synchrotron Light Application Center, Saga University, Honjo 1, Saga 840-8502 (Japan); Tanaka, M. [Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501 (Japan)

    2015-08-15

    Highlights: • Electronic states associated with silver adsorption processes on oxidized silicon surfaces were investigated. • Characterization of oxide thin films on Si surfaces was performed using photoelectron spectroscopy with synchrotron radiation. • The changes in the Si 2p oxide components upon silver adsorption are ascribed to charge transfer rather than a conformation change. - Abstract: The adsorption and reaction of silver on an oxidized Si(0 0 1) surface were investigated on the basis of Si 2p, Ag 3d and O 1s core-level photoemission measurements at room temperature (RT). We compared the present results with those obtained in the case of titanium in our previous study. We found that silver on an oxidized Si(0 0 1) surface at RT causes a reduction in the intensity of the Si{sup 1+} and Si{sup 2+} states and an increase in the intensity of the Si{sup 3+} and Si{sup 4+} states. Based on an analysis of the Ag 3d and O 1s states, we concluded that the change in the Si 2p oxidized states upon silver adsorption is due to charge transfer rather than conformation change, although the applicability of the charge transfer scheme may be dependent on the thickness of the silver layer. We also deduced that penetration of silver atoms through a thin silicon oxide film occurs.

  19. Evolution of kinetically controlled In-induced surface structure on Si(5 5 7) surface

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Amit Kumar Singh [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics, JMI, New Delhi 110025 (India); Eldose, Nirosh M.; Mishra, Monu [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Niazi, Asad; Nair, Lekha [Department of Physics, JMI, New Delhi 110025 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2014-09-30

    Highlights: • Evolution of In induced superstructures on Si(5 5 7) surface during RT and HT adsorption/desorption process. • Kinetics is governed by substrate temperature which exhibits various growth modes (FM, SK, VB) under different conditions. • Strain relaxation play significant role in the commencement of desorption/rearrangement of atoms. • A consolidated phase diagram of In/Si(5 5 7) interface has been reported with new √3 × √3-R30° and 4 × 1 phases. - Abstract: This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 × 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In overlayers evolve through the Frank-van der Merwe growth mode and yield a (1 × 1) diffraction pattern for coverage ≥1 ML. For substrate temperature <500°C, growth of In follows Stranski–Krastanov growth mode while for temperature >500°C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250–340°C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 × 1) at 0.5 ML (520°C), (√3 × √3-R30°) at 0.3 ML (560°C) and (7 × 7) at 0.1 ML (580°C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures.

  20. Adsorption Mechanisms of NH{sub 3} on Chlorinated Si(100)-2 x 1 Surface

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hee Soon; Choi, Cheol Ho [Kyungpook National University, Daegu (Korea, Republic of)

    2012-03-15

    The potential energy surfaces of ammonia molecule adsorptions on the symmetrically chlorinated Si(100)- 2 x 1 surface were explored with SIMOMM:MP2/6-31G(d). It was found that the initial nucleophilic attack by ammonia nitrogen to the surface Si forms a S{sub N}2 type transition state, which eventually leads to an HCl molecular desorption. The second ammonia molecule adsorption requires much less reaction barrier, which can be rationalized by the surface cooperative effect. In general, it was shown that the surface Si-Cl bonds can be easily subjected to the substitution reactions by ammonia molecules yielding symmetric surface Si-NH{sub 2} bonds, which can be a good initial template for subsequent surface chemical modifications. The ammonia adsorptions are in general more facile than the corresponding water adsorption, since ammonia is better nucleophile

  1. Structure of the Co/Si(111) √{13}×√{13} surface revisited

    Science.gov (United States)

    Olyanich, D. A.; Utas, T. V.; Alekseev, A. A.; Kotlyar, V. G.; Zotov, A. V.; Saranin, A. A.

    2014-07-01

    The Si(111) √{13}×√{13}-R 13.9°-Co surface reconstruction shows up in the scanning tunneling microscopy images as an array of clusters. Two types of clusters coexist appearing as dark and bright in the images. P. Wetzel with co-workers (Surf. Sci. 604 (2010) 513 and Surf. Sci. 607 (2013) 111) have recently proposed a structural model of the dark cluster containing three Co atoms located in substitutional sites of the Si(111) surface with overlying triangle of six Si adatoms. The bright clusters have been suggested to contain three additional Si atoms on top of the six Si atoms terminating the dark cluster. The proposed models assume that the Si(111) √{13}×√{13}-R 13.9°-Co surface contains 3/13-0.23 ML Co. Our thorough experimental evaluations of the surface composition confirm that the bright cluster adopts three additional Si atoms but unambiguously demonstrate that the actual Co coverage at the Si(111) √{13}×√{13}-R 13.9°-Co surface is 1.4 ± 0.2 ML. To reconcile the reported structural models with the newly determined Co coverage, we suggest that the clusters reside not at the bare Si(111) surface (as suggested previously), but on the silicide Si-Co-Si triple layer on Si(111) substrate. Among about forty models with various types of completed and uncompleted silicide interfaces, the two models (with A8- and B8-type interfaces) have been proven to represent the most stable configurations.

  2. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

    Science.gov (United States)

    Medvid, Artur; Onufrijevs, Pavels; Jarimaviciute-Gudaitiene, Renata; Dauksta, Edvins; Prosycevas, Igoris

    2013-06-04

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms' redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones.

  3. First-principle study of Mg adsorption on Si(111) surfaces

    Institute of Scientific and Technical Information of China (English)

    Ying Min-Ju; Zhang Ping; Du Xiao-Long

    2009-01-01

    We have carried out first-principle calculations of Mg adsorption on Si(111) surfaces. Different adsorption sites and coverage effects have been considered. We found that the threefold hollow adsorption is energy-favoured in each coverage considered, while for the clean Si(111) surface of metallic feature, we found that 0.25 and 0.5 ML Mg adsorption leads to a semiconducting surface. The results for the electronic behaviour suggest a polarized covalent bonding between the Mg adatom and Si(111) surface.

  4. Equilibrium Geometries, Reaction Pathways, and Electronic Structures of Ethanol Adsorbed on the Si (111) Surface

    CERN Document Server

    Gavrilenko, A V; Gavrilenko, V I

    2008-01-01

    Equilibrium atomic configurations and electron energy structure of ethanol adsorbed on the Si (111) surface are studied by the first-principles density functional theory. Geometry optimization is performed by the total energy minimization method. Several equilibrium atomic configurations of ethanol, both undissociated and dissociated, on the Si (111) surface are found. Reaction pathways and predicted transition states are discussed in comparison with available experimental data in terms of the feasibility of the reactions occurring. Analysis of atom and orbital resolved projected density of states indicate substantial modifications of the Si surface valence and conduction bands due to the adsorption of ethanol affecting the electrical properties of the surface.

  5. From Molecules to Surfaces: Radical-Based Mechanisms of Si-S and Si-Se Bond Formation on Silicon.

    Science.gov (United States)

    Buriak, Jillian M; Sikder, Md Delwar H

    2015-08-05

    The derivatization of silicon surfaces can have profound effects on the underlying electronic properties of the semiconductor. In this work, we investigate the radical surface chemistry of silicon with a range of organochalcogenide reagents (comprising S and Se) on a hydride-terminated silicon surface, to cleanly and efficiently produce surface Si-S and Si-Se bonds, at ambient temperature. Using a diazonium-based radical initiator, which induces formation of surface silicon radicals, a group of organochalcogenides were screened for reactivity at room temperature, including di-n-butyl disulfide, diphenyl disulfide, diphenyl diselenide, di-n-butyl sulfide, diphenyl selenide, diphenyl sulfide, 1-octadecanethiol, t-butyl disulfide, and t-butylthiol, which comprises the disulfide, diselenide, thiol, and thioether functionalities. The surface reactions were monitored by transmission mode Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ionization mass spectrometry. Calculation of Si-Hx consumption, a semiquantitative measure of yield of production of surface-bound Si-E bonds (E = S, Se), was carried out via FTIR spectroscopy. Control experiments, sans the BBD diazonium radical initiator, were all negative for any evident incorporation, as determined by FTIR spectroscopy. The functional groups that did react with surface silicon radicals included the dialkyl/diphenyl disulfides, diphenyl diselenide, and 1-octadecanethiol, but not t-butylthiol, diphenyl sulfide/selenide, and di-n-butyl sulfide. Through a comparison with the rich body of literature regarding molecular radicals, and in particular, silyl radicals, reaction mechanisms were proposed for each. Armed with an understanding of the reaction mechanisms, much of the known chemistry within the extensive body of radical-based reactivity has the potential to be harnessed on silicon and could be extended to a range of technologically relevant semiconductor

  6. Simulation of Multilayer Silicon Thin Films Growth on Si(111) Surface

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influence of the Ehrlich-Schwoebel (ES) barrier on the growth modes and morphologies. It is evident that there exists the ES barrier during multilayer Si thin film growth on Si (111) surface, which is deduced from the incomplete layer-by-layer growth process in the realistic experiments. The ES barrier EB=0.1~0.125 eV is estimated from the three-dimensional (3D) MC simulation and compared with the experimental results.

  7. A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Pham, A.T. [BST, TU Braunschweig, Postfach 33 29, 38023 Braunschweig (Germany)]. E-mail: pham@nst.ing.tu-bs.de; Jungemann, C. [EIT4, 85577 Neubiberg, Universitaet der Bundeswehr Muenchen (Germany); Nguyen, C.D. [BST, TU Braunschweig, Postfach 33 29, 38023 Braunschweig (Germany); Meinerzhagen, B. [BST, TU Braunschweig, Postfach 33 29, 38023 Braunschweig (Germany)

    2006-12-15

    A new hole surface scattering model for FBMC simulations is presented for unstrained Si and biaxially strained Si/SiGe PMOSFETs. The new scattering model was developed for quantum corrected spatial hole charge distributions at the Si/SiO{sub 2} interface, where the quantum correction is based on the improved modified local density approximation (IMLDA). To extract channel mobility efficiently, a new linear response (LR) MC method has been developed. The new LRMC method, which is faster than standard MC by about three orders of magnitude, allows to extract the parameters of the surface scattering model for holes from the available measurements in an efficient manner. The model has been calibrated and verified for a wide range of doping levels (7.8x10{sup 15} to 6.6x10{sup 17}cm{sup -3}), temperatures (223-443-bar K) and Ge-content up to 30% by comparison to experimental data. A 23-bar nm PMOSFET with and without a strained Si layer on top of the substrate has been simulated with our new FBMC model. Drain current enhancement due to biaxial strain is found to be reduced in comparison to the NMOSFET case.

  8. Interface orbital engineering of large-gap topological states: Decorating gold on a Si(111) surface

    Science.gov (United States)

    Huang, Bing; Jin, Kyung-Hwan; Zhuang, Houlong L.; Zhang, Lizhi; Liu, Feng

    2016-03-01

    Intensive effort has recently been made in search of topological insulators (TIs) that have great potential in spintronics applications. In this paper, a novel concept of overlayer induced interfacial TI phase in conventional semiconductor surface is proposed. The first-principles calculations demonstrate that a p -band-element X (X =In , Bi, and Pb) decorated d -band surface, such as Au/Si(111) surface [X /Au/Si(111)] of an existing experimental system, offers a promising prototype for TIs. Specifically, Bi/Au/Si(111) and Pb/Au/Si(111) are identified to be large-gap TIs. A p -d band inversion mechanism induced by growth of X in the Au/Si(111) surface is revealed to function at different coverage of X with different lattice symmetries, suggesting a general approach of interface orbital engineering of large-gap TIs via tuning the interfacial atomic orbital position of X relative to Au.

  9. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    Science.gov (United States)

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-07

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future.

  10. Argon ion beam induced surface pattern formation on Si

    Energy Technology Data Exchange (ETDEWEB)

    Hofsäss, H.; Bobes, O.; Zhang, K. [2nd Institute of Physics, Faculty of Physics, University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

    2016-01-21

    The development of self-organized surface patterns on Si due to noble gas ion irradiation has been studied extensively in the past. In particular, Ar ions are commonly used and the pattern formation was analyzed as function of ion incidence angle, ion fluence, and ion energies between 250 eV and 140 keV. Very few results exist for the energy regime between 1.5 keV and 10 keV and it appears that pattern formation is completely absent for these ion energies. In this work, we present experimental data on pattern formation for Ar ion irradiation between 1 keV and 10 keV and ion incidence angles between 50° and 75°. We confirm the absence of patterns at least for ion fluences up to 10{sup 18} ions/cm{sup 2}. Using the crater function formalism and Monte Carlo simulations, we calculate curvature coefficients of linear continuum models of pattern formation, taking into account contribution due to ion erosion and recoil redistribution. The calculations consider the recently introduced curvature dependence of the erosion crater function as well as the dynamic behavior of the thickness of the ion irradiated layer. Only when taking into account these additional contributions to the linear theory, our simulations clearly show that that pattern formation is strongly suppressed between about 1.5 keV and 10 keV, most pronounced at 3 keV. Furthermore, our simulations are now able to predict whether or not parallel oriented ripple patterns are formed, and in case of ripple formation the corresponding critical angles for the whole experimentally studied energies range between 250 eV and 140 keV.

  11. Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

    CSIR Research Space (South Africa)

    Tshabalala, LC

    2016-03-01

    Full Text Available Traditional abrasive techniques such as grinding and lapping have long been used in the surface conditioning of engineering materials. However, in the processing of hard and brittle materials like silicon nitride (Si(sub3)N(sub4)), machining...

  12. First-principles study on initial stage of oxidation on Si(110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Nagasawa, Takahiro; Shiba, Seiji; Sueoka, Koji [Department of System Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2011-03-15

    There is a great deal of engineering interest in Si (110) wafers as the substrates of large scale integrations (LSIs) in the next generation. However, few studies on Si (110) surface have been reported in comparison with those on other low-index surfaces, still less the mechanism of surface oxidation. We analyzed the surface structure and the initial stage of oxidation on the Si (110)-(16 x 2) clean surface with first-principles calculation. The results of our calculations showed that first, the stable structure of the Si (110) clean surface was the adatom-tetramer-interstitial (ATI) reconstruction. Second, pairs of pentagon (PPs) were preferentially oxidized in the initial stage of the oxidation. Third, the oxidation growth should progress with the clustering of O atoms. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Evolution of plant P-type ATPases

    Directory of Open Access Journals (Sweden)

    Christian N.S. Pedersen

    2012-02-01

    Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

  14. Local protrusions formed on Si(111) surface by surface melting and solidification under applied tensile stress

    Science.gov (United States)

    Nishimura, T.; Tomitori, M.

    2016-09-01

    The surface structure and composition of Si(111) was modified, by heating it to 1300 °C in ultrahigh vacuum under an external tensile stress. A stress of approximately 1 GPa was applied, by pressing on the center of the rear side of the sample. This process produced two protrusions of approximately 100 μm in height, to the left and right of the center. Scanning Auger electron spectroscopy revealed Fe, Cr, Ni, and C impurities at the top of one protrusion, and C at the top of the other. These impurities likely diffused into the tops of the protrusions during heating, and segregated to the local surface during cooling when the protrusions formed. The protrusion formation mechanism is discussed. Their formation was related to non-uniform surface temperature, electromigration, piezoresistivity, freezing-point depression due to surface alloying with the impurities, and volume expansion during solidification from surface melting. These findings provide a perspective on controlling surface structures and compositions using heat and stress to induce self-assembly.

  15. Evaluation of surface recombination of SiC for development of bipolar devices

    Science.gov (United States)

    Kato, Masashi

    2016-09-01

    Ultra-high voltage power devices are employed for management of power networks. Si-based semiconductor devices have been developed for such the power devices. Maximum breakdown voltages of Si devices are of the order of kV. When the voltage in the power network was higher than the breakdown voltage of the devices, the devices were connected in series. The series connection introduces high resistance and power loss. To overcome this series resistance problem, it has been suggested that utilization of silicon carbide (SiC) devices. SiC has much higher breakdown electric field than Si, and thus high voltage in the power networks can be managed by SiC device without the series connection. Therefore, development of ultra-high voltage SiC device will decrease resistance and power loss in the power networks. However, there are several difficulties to develop ultra-high voltage SiC devices. One of the difficulties is control of the carrier lifetime. In fact, ultra-high voltage devices are fabricated with bipolar structure, and, in the bipolar devices, the carrier lifetime is highly influential on resistance and power loss. The carrier lifetime is limited by several factors, and one of the most important factors is the surface recombination. Therefore, evaluation and control of the surface recombination is essential to develop ultra-high voltage SiC devices. In this paper, we will report evaluation techniques for the surface recombination of SiC. In addition, dependence of the surface recombination on surface treatments, crystal faces and temperature are shown. The evaluated surface recombination velocities will support development of ultra-high voltage SiC devices.

  16. Identification of -SiC surrounded by relatable surrounding diamond medium using weak Raman surface phonons

    Indian Academy of Sciences (India)

    Mohan Kumar Kuntumalla; Harish Ojha; Vadali Venkata Satya Siva Srikanth

    2013-11-01

    It is difficult to detect -SiC using micro-Raman scattering, if it is surrounded by carbon medium. Here, -SiC is identified in the presence of a relatable surrounding diamond medium using subtle, but discernible Raman surface phonons. In this study, diamond/-SiC nanocomposite thin film system is considered in which nanosized -SiC crystallites are surrounded by a relatable nanodiamond medium that leads to the appearance of a weak Raman surface phonon band at about 855 cm-1. Change in the nature of the surrounding material structure and its volume content when relatable, will affect the resultant Raman response of -SiC phase as seen in the present case of diamond/-SiC nanocomposite thin films.

  17. Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces

    CERN Document Server

    Mahieu, G; Stiévenard, Didier; Krzeminski, Christophe; Delerue, Christophe; Roncali, Jean; Martineau, C; 10.1021/la026907n

    2012-01-01

    A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of isolated molecules. Conversely, by substituting the thiophene rings of the oligomers with alkyl chains, a spontaneous ordered film is observed on the HOPG surface. As the interaction of the oligomers is different with both surfaces, the utility of the Si(100) surface to characterize individual oligomers prior to their use into a 2D layer is discussed.

  18. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  19. Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si(100) Surface

    DEFF Research Database (Denmark)

    Swartzentruber, B. S.; Smith, A. P.; Jonsson, Hannes

    1996-01-01

    Scanning tunneling microscopy measurements and first principles density functional theory calculations are used to study the rate of the rotational transition of Si ad-dimers on top of the surface dimer rows of Si(100). The rotation rate and the relative population of the two stable orientations ...... of the ad-dimers are measured as a function of the applied electric field to extract the zero-field behavior. The measured relative stability of the two configurations is used to test the accuracy of various functionals for density functional theory calculations....

  20. Initial stages of Zr-Fe-Si alloy formation on Zr(0001) surface

    Science.gov (United States)

    Horáková, Kateřina; Cichoň, Stanislav; Lančok, Ján; Sajdl, Petr; Cháb, Vladimír

    2017-03-01

    We studied initial stages of Fe and Si atoms interaction with the Zr(0001) surface. Fe and Si were deposited in-situ on the clean Zr surface up to coverage of one monolayer. Chemical state of Zr as a function of annealing temperature and the surface composition was investigated. Characteristic (1×1) LEED (Low Energy Electron Diffraction) pattern of the clean Zr surface becomes significantly modified when Fe and Si are deposited and annealed at 400 °C. The arrangement of new spots of the pattern corresponds to the (2√3×2√3)R30° structure, stable up to annealing at 750 °C. Changes in the electronic structure were identified from the images of equi-energy cuts of the k-space covering the entire Brillouin zone. The results imply that hydrogen, typically present in the clean surface, was eliminated either by annealing or upon the deposition of Fe and Si.

  1. DFT-investigations of coalescence behaviour of small magic Si clusters on surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Quester, Wolfram; Nielaba, Peter [Fachbereich Physik, Universitaet Konstanz, 78457 Konstanz (Germany)

    2007-07-01

    Experimental results indicate that small magic Si clusters do not form islands of bulk Si on weakly interacting surfaces (HOPG). For Si{sub 4} this was confirmed in earlier calculations. This leads to the question if these clusters are suited as building blocks for new cluster materials. These investigations were extended to Si{sub 7}. Potential energy curves of two approaching Si{sub 7} clusters were calculated for different reaction channels using Density Functional Theory implemented in the CPMD code available. It could be shown that the cluster-cluster interaction is either repulsive or there are fusion barriers higher than room temperature. Since the influence of the surface is important, the next step was to include the graphite surface in the simulations. Also the influence of defects was to be studied.

  2. The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures

    Science.gov (United States)

    Lin, Xi; Hu, Jingshi; Lai, Andrew P.; Zhang, Zhenning; MacLean, Kenneth; Dillard, Colin; Xie, Ya-Hong; Kastner, Marc A.

    2011-07-01

    Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive layer parallel to the two-dimensional electron gas, possibly resulting from the donors used to dope the Si quantum well, is responsible for the well-known difficulty in achieving well-controlled dots in this system. Charge motion in the conductive layer can cause depletion on large length scales, making electron confinement in the dot impossible, and can give rise to noise that can overwhelm the single-electron charging signal. Results of capacitance versus gate bias measurements to characterize this conductive layer are presented.

  3. Speciation of potentially mobile Si in Yangtze Estuary surface sediments: estimates using a modified sequential extraction technique.

    Science.gov (United States)

    Zhu, Huagang; Wang, Chao; Wang, Peifang; Hou, Jun; Qian, Jin; Ao, Yanhui; Liu, Cui

    2016-09-01

    To improve our understanding of the Si-related biogeochemical processes that occur in estuarine ecosystems with large subaqueous deltas (e.g., the Yangtze Estuary; YE), the speciation of Si in the surface sediments of the YE was investigated. The relationships between the different Si species and sediment bulk parameters were also discussed. Based on modified sequential extraction method, we can successfully estimate the following five sedimentary potentially mobile Si pools: weak acid leachable Si (W-Si); Si bound to organic matter (H-Si); Si coprecipitated with amorphous Fe/Al oxides (O-Si); Si coprecipitated with crystalline Fe/Al oxides (Ouv-Si), and biogenic silica (B-Si). The total potentially mobile Si pool (T-Si) ranged between 1689.31 and 5487.10 μg/g, with high values observed in deltaic mud deposits. The Si fractions were closely correlated with grain size compositions, except for O-Si. In deltaic mud deposits, efficient loss of organic matters and recycling of Fe oxides probably resulted in the amorphous or poorly crystalline Fe oxides uncoupled with the clay fractions, and thus leading to the lack of correlation between O-Si and grain size. As compared with Ouv-Si, the O-Si should possess stronger mobility, which highlights the importance of quantifying the O-Si pool in deltaic sediments.

  4. Phospholipid bilayer formation at a bare Si surface

    DEFF Research Database (Denmark)

    Gutberlet, T.; Steitz, R.; Fragneto, G.

    2004-01-01

    Neutron reflectivity was applied to monitor in situ the adsorption of small unilamellar phospholipid vesicles on a solid bare hydrophilic Si interface. The obtained reflectivity curves are consistent with the rupture and fusion model for the adsorption of phosphatidylcholine vesicles to solid...

  5. Molecular Simulation study of Alkyl Monolayers on Si(III) Surface

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The structure of eight-carbon monolayers on the H-terminated Si(III) surface was investigated by molecular simulation method. The best substitution percent 50% for octene or octyne-derived monolayer can be obtained using molecular mechanics calculation. And the densely packed, well-ordered monolayer on Si(III) surface can be shown through energy minimization in the suitable-size simulation cell.

  6. Room-Temperature Growth of Al Films on Si(111)-7×7 Surface

    Institute of Scientific and Technical Information of China (English)

    LIU Hong; ZHANG Yan-Feng; WANG De-Yong; JIA Jin-Feng; XUE Qi-Kun

    2004-01-01

    @@ Reflection high energy electron diffraction and scanning tunnelling microscopy (STM) are used to investigate the structure and morphology of Al films deposited on Si(111)-7 × 7 surface at room temperature. The films are polycrystalline, made up of (100) and (111) oriented islands, which primarily result from the interface elastic effect and free surface energies of the Al (100) and (111) surfaces.

  7. Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface.

    Science.gov (United States)

    Nichkalo, Stepan; Druzhinin, Anatoly; Evtukh, Anatoliy; Bratus', Oleg; Steblova, Olga

    2017-12-01

    This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface of Si substrate. This modification allowed to obtain the close-packed Au nanodrop (ND) pattern that generates the nanowires (NWs) and the well-separated Au NDs, which induce the nanopore (NP) formation. The antireflective properties of these structures in comparison with NWs produced by the conventional Ag-MacEtch method were analysed. The total surface reflectance of 1~7% for SiNWs and ~17% for SiNPs was observed over the entire Si-absorbing region. Moreover, SiNWs prepared by Au-MacEtch demonstrate better antireflective properties in contrast to those formed by conventional Ag-assisted chemical etching. So, the use of SiNWs produced by the modified Au-MacEtch method as the antireflective material is favored over those prepared by Ag-MacEtch due to their higher light absorption and lower reflectance. The possible reason of these findings is discussed.

  8. Evolution of kinetically controlled In-induced surface structure on Si(5 5 7) surface

    Science.gov (United States)

    Chauhan, Amit Kumar Singh; Eldose, Nirosh M.; Mishra, Monu; Niazi, Asad; Nair, Lekha; Gupta, Govind

    2014-09-01

    This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 × 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In overlayers evolve through the Frank-van der Merwe growth mode and yield a (1 × 1) diffraction pattern for coverage ≥1 ML. For substrate temperature 500 °C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250-340 °C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 × 1) at 0.5 ML (520 °C), (√3 × √3-R30°) at 0.3 ML (560 °C) and (7 × 7) at 0.1 ML (580 °C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures.

  9. First-principles study of water adsorption on α-SiO2 [110] surface

    Directory of Open Access Journals (Sweden)

    Venu Mankad

    2016-08-01

    Full Text Available We have investigated the structural and electronic properties of water molecule adsorbed silicon dioxide (α-SiO2 [110] surface and analyzed the influence of water molecule on its energetics, structure and elctronic propertes using density functional theory based first principles calculations. The inhomogeneous topology of the α-SiO2 clean surface promotes a total charge density displacement on the adsorbed water molecule and giving rise to electron-rich as well as hole-rich region. The electronic charge transfer from a α-SiO2 to the water molecule occurs upon the formation of a partially occupied level laying above conduction band level.

  10. pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces

    Science.gov (United States)

    Cloarec, Jean-Pierre; Chevalier, Céline; Genest, Jonathan; Beauvais, Jacques; Chamas, Hassan; Chevolot, Yann; Baron, Thierry; Souifi, Abdelkader

    2016-07-01

    pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at pH 2.8; and they were mainly anchored on SiO2 at pH 2. A theoretical model based on DLVO theory and surface protonation/deprotonation equilibria was used to study how, in adequate pH conditions, Si nanowires could be anchored onto specific regions of a patterned Si3N4/SiO2 surface. Instead of using capillary forces, or hydrophilic/hydrophobic contrast between the two types of materials, the specificity of immobilization could rely on surface electric charge contrasts between Si3N4 and SiO2. This simple and generic method could be used for addressing a large diversity of nano-objects onto patterned substrates.

  11. Electron Emission from Cross-Sectional Surface of Porous Si on Glass Substrate

    Science.gov (United States)

    Katsuya Higa,

    2010-02-01

    The measurement of electron emission from the cross-sectional surface of porous Si layer on a glass substrate is demonstrated. The porous Si is formed by anodization, and subsequently bonded on a glass substrate with an Al electrode by anodic bonding. The electron emission device structure is composed of a Au electrode, a porous Si layer, and a glass substrate with an Al electrode. This structure is cut into two pieces during the formation of the cross-sectional surface of porous Si. The measurement of electron emission is carried out using a diode configuration in a vacuum chamber. A collector is placed close to the cross-sectional surface of porous Si. The negative voltages are applied at the Au electrode and electron emission from the cross-sectional surface of porous Si layer occurs. The characteristics of emission current are measured using the variation of applied negative voltage, the stability of electron emission, and the change in location of the Au electrode at the edge of the cross section of porous Si layer.

  12. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-10-30

    Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  13. Mechanically robust superhydrophobicity on hierarchically structured Si surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Xiu Yonghao; Hess, Dennis W [School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive, Atlanta, GA 30332-0100 (United States); Liu Yan; Wong, C P, E-mail: dennis.hess@chbe.gatech.edu, E-mail: cp.wong@mse.gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, GA 30332-0245 (United States)

    2010-04-16

    Improvement of the robustness of superhydrophobic surfaces is critical in order to achieve commercial applications of these surfaces in such diverse areas as self-cleaning, water repellency and corrosion resistance. In this study, the mechanical robustness of superhydrophobic surfaces was evaluated on hierarchically structured silicon surfaces. The effect of two-scale hierarchical structures on robustness was investigated using an abrasion test and the results compared to those of superhydrophobic surfaces fabricated from polymeric materials and from silicon that contains only nanostructures. Unlike the polymeric and nanostructure-only surfaces, the hierarchical structures retained superhydrophobic behavior after mechanical abrasion.

  14. Structural Features of Boron-Doped Si(113) Surfaces Simulated by ab initio Calculations

    Institute of Scientific and Technical Information of China (English)

    LIAO Long-Zhong; LIU Zheng-Hui; ZHANG Zhao-Hui

    2008-01-01

    Based on ab initio calculations, boron-doped Si(113) surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.

  15. Pump-probe imaging of laser-induced periodic surface structures after ultrafast irradiation of Si

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, Ryan D. [Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States); Torralva, Ben [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Adams, David P. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Yalisove, Steven M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2013-09-30

    Ultrafast pump-probe microscopy has been used to investigate laser-induced periodic surface structure (LIPSS) formation on polished Si surfaces. A crater forms on the surface after irradiation by a 150 fs laser pulse, and a second, subsequent pulse forms LIPSS within the crater. Sequentially delayed images show that LIPSS with a periodicity slightly less than the fundamental laser wavelength of 780 nm appear on Si surfaces ∼50 ps after arrival of the second pump laser pulse, well after the onset of melting. LIPSS are observed on the same timescale as material removal, suggesting that their formation involves material ejection.

  16. Pump-probe imaging of laser-induced periodic surface structures after ultrafast irradiation of Si

    Science.gov (United States)

    Murphy, Ryan D.; Torralva, Ben; Adams, David P.; Yalisove, Steven M.

    2013-09-01

    Ultrafast pump-probe microscopy has been used to investigate laser-induced periodic surface structure (LIPSS) formation on polished Si surfaces. A crater forms on the surface after irradiation by a 150 fs laser pulse, and a second, subsequent pulse forms LIPSS within the crater. Sequentially delayed images show that LIPSS with a periodicity slightly less than the fundamental laser wavelength of 780 nm appear on Si surfaces ˜50 ps after arrival of the second pump laser pulse, well after the onset of melting. LIPSS are observed on the same timescale as material removal, suggesting that their formation involves material ejection.

  17. Pt-Si Bifunctional Surfaces for CO and Methanol Electro-Oxidation

    DEFF Research Database (Denmark)

    Permyakova, Anastasia A.; Han, Binghong; Jensen, Jens Oluf

    2015-01-01

    Bimetallic surfaces offer activity benefits derived from synergistic effects among active sites with uniquely different functions, which is particularly important for the development of highly effective heterogeneous catalysts for specific technological applications, such as energy conversion...... and storage. Here we report on Pt-Si bulk samples prepared by arc-melting, for the first time, with high activities toward the electro-oxidation of CO and methanol. Increasing the Si concentration on the surface was correlated with the shifts of onset oxidation potentials to lower values and higher activities...... for CO and methanol electro-oxidation. It is proposed that the reaction on the Pt-Si catalyst could follow a Langmuir-Hinshelwood type of mechanism, where substantially enhanced catalytic activity is attributed to the fine-tuning of the surface Pt-Si atomic structure....

  18. A synergetic application of surface plasmon and field effect to improve Si solar cell performance

    Science.gov (United States)

    Zhou, Zhi-Quan; Wang, Liang-Xing; Shi, Wei; Sun, Shu-Lin; Lu, Ming

    2016-04-01

    We report a synergetic application of surface plasmon (SP) and field effect (FE) to improve crystalline Si solar cell performance. The SPs are supported by small-sized Ag nanoparticles with an average diameter of 36.7 nm. The localized SP electromagnetic field from Ag nanoparticles excites extra electron-hole pairs at the surface region of the Si solar cell emitter, and meanwhile, the electron-hole pairs are detached by the electrostatic field that crosses the emitter surface. This synergism of SP and FE produces extra charges and enhances the Si solar cell efficiency. As compared to a Si solar cell applying SP and FE independently, a more than 10% efficiency enhancement is achieved by using them synergistically.

  19. Theoretical reconsideration of antiferromagnetic Fermi surfaces in URu{sub 2}Si{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Hiroshi, E-mail: yamagami@cc.kyoto-su.ac.jp [Department of Physics, Faculty of Science, Kyoto Sangyo University, Kyoto 603-8555 (Japan)

    2011-01-01

    In an itinerant 5f-band model, the antiferromagnetic (AFM) Fermi surfaces of URu{sub 2}Si{sub 2} are reconsidered using a relativistic LAPW method within a local spin-density approximation, especially taking into account the lattice parameters dependent on pressures. The reduction of the z-coordinate of the Si sites results in the effect of flattening the Ru-Si layers of URu{sub 2}Si{sub 2} crystal structure, thus weakening a hybridization/mixing between the U-5f and Ru-4d states in the band structure. Consequently the 5f bands around the Fermi level are more flat in the dispersion with decreasing the z-coordinate, thus producing three closed Fermi surfaces like 'curing-stone', 'rugby-ball' and 'ball'. The origins of de Haas-van Alphen branches can be qualitatively interpreted from the obtained AFM Fermi surfaces.

  20. Microscopic surface structure of C/SiC composite mirrors for space cryogenic telescopes

    CERN Document Server

    Enya, Keigo; Kaneda, Hidehiro; Onaka, Takashi; Ozaki, Tuyoshi; Kume, Masami

    2007-01-01

    We report on the microscopic surface structure of carbon-fiber-reinforced silicon carbide (C/SiC) composite mirrors that have been improved for the Space Infrared Telescope for Cosmology and Astrophysics (SPICA) and other cooled telescopes. The C/SiC composite consists of carbon fiber, silicon carbide, and residual silicon. Specific microscopic structures are found on the surface of the bare C/SiC mirrors after polishing. These structures are considered to be caused by the different hardness of those materials. The roughness obtained for the bare mirrors is 20 nm rms for flat surfaces and 100 nm rms for curved surfaces. It was confirmed that a SiSiC slurry coating is effective in reducing the roughness to 2 nm rms. The scattering properties of the mirrors were measured at room temperature and also at 95 K. No significant change was found in the scattering properties through cooling, which suggests that the microscopic surface structure is stable with changes in temperature down to cryogenic values. The C/SiC ...

  1. Surface Passivation of Ti/4H-SiC Schottky Barrier Diode

    Institute of Scientific and Technical Information of China (English)

    Muhammad Khalid; Saira Riaz; Shahzad Naseem

    2012-01-01

    Surface properties of SiC power devices mostly depend on the passivation layer (PL).This layer has direct influence on electrical characteristics of devices.2D numerical simulation of forward and reverse characteristics with and without different (PLs) (SiO2,HfO2 and Si3N4) has been performed.Simulation results show that the breakdown voltage increases with increasing PL thickness,and there is a lesser significant effect on forward characteristics.The maximum breakdown voltage with and without SiO2 PL is 1240 V and 276 V,respectively.SiO2 PL has compatibility with SiC surface providing high breakdown voltage,6 and 8% higher than that of HfO2 and Si3N4 respectively.Low leakage current is observed which then further decreases on reducing the thickness of PL.Furthermore,variation of forward current with dielectric constant and thickness of PLs was observed.Finally,it is suggested that matches of our results with published experimental results indicate that the Sentaurus TCAD simulator is a predictive tool for the SiC Schottky barrier diode simulation.

  2. Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces.

    Science.gov (United States)

    Sano, Yasuhisa; Shirasawa, Yuki; Okamoto, Takeshi; Yamauchi, Kazuto

    2011-04-01

    Silicon carbide (SiC) is a suitable substrate for low-power-consumption power devices and high-temperature applications. However, this material is difficult to machine because of its hardness and chemical inertness, and many machining methods have been studied intensively in recent years. In this paper, we present a simple method to evaluate the electrical properties of the processed surface using the ideal factor n of a Schottky barrier diode (SBD) fabricated directly on the processed surface. Upon comparing the values of n for SBDs fabricated on a damaged SiC surface and a non-damaged SiC surface, we found that there is a significant difference in the dispersion and magnitude of n. Furthermore, by combining this technique with slope etching, we were able to estimate the thickness of the damaged sub-surface layer.

  3. Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Huang Lingqin; Zhu Qiaozhi; Gao Mingchao [School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, 116024 (China); Qin Fuwen [State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, 116024 (China); Wang Dejun, E-mail: dwang121@dlut.edu.cn [School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, 116024 (China)

    2011-09-15

    N-type 4H-SiC (0 0 0 1) surfaces were cleaned by low temperature hydrogen plasma in electronic cyclotron resonance (ECR) microware plasma system. The effects of the hydrogen plasma treatment (HPT) on the structure, chemical and electronic properties of surfaces were characterized by in situ reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). The RHEED results indicate that the structures of the films are strongly dependent on the treatment temperature and time. Significant improvements in quality of 4H-SiC films can be obtained with the temperature ranging from 200 deg. C to 700 deg. C for an appropriate treatment period. The XPS results show that the surface oxygen is greatly reduced and the carbon contamination is completely removed from the 4H-SiC surfaces. The hydrogenated SiC surfaces exhibit an unprecedented stability against oxidation in the air. The surface Fermi level moves toward the conduction band in 4H-SiC after the treatment indicating an unpinning Fermi level with the density of surfaces states as low as 8.09 x 10{sup 10} cm{sup -2} eV{sup -1}.

  4. Scanning electron microscopy of the surfaces of ion implanted SiC

    Energy Technology Data Exchange (ETDEWEB)

    Malherbe, Johan B., E-mail: johan.malherbe@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Berg, N.G. van der; Kuhudzai, R.J.; Hlatshwayo, T.T.; Thabethe, T.T.; Odutemowo, O.S.; Theron, C.C.; Friedland, E. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Botha, A.J. [Laboratory for Microscopy & Microanalysis, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, 07743 Jena (Germany)

    2015-07-01

    This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360 keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350 °C), or above (i.e. 600 °C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900 °C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface.

  5. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    Science.gov (United States)

    Jayachandran, Suseendran; Billen, Arne; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Delabie, Annelies

    2016-10-01

    The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O3) or oxygen (O2) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH4) at 500 °C. After O3 exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH4 reactants, allowing more time for surface diffusion. After O2 exposure, the O atoms are present in the form of SiOx clusters. Regions of hydrogen-terminated Si remain present between the SiOx clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  6. Incorporation of Si and SiO(x) into diamond-like carbon films: impact on surface properties and osteoblast adhesion.

    Science.gov (United States)

    Randeniya, L K; Bendavid, A; Martin, P J; Amin, Md S; Preston, E W; Magdon Ismail, F S; Coe, S

    2009-06-01

    The interaction of human osteoblast cells with diamond-like carbon films incorporating silicon and silicon oxide (SiO(x), 1 activated chemical vapour deposition method was investigated. Cell culture studies were performed for films with Si contents ranging from approximately 4 at.% to 15 at.%. Substantial differences between Si-incorporated and SiO(x)-incorporated films were found for the bonding environments of Si atoms and the hybridization of underlying carbon structures. However, osteoblast-attachment studies did not show statistically significant trends in properties of cell growth (count, area and morphology) that can be attributed either to the Si content of the films or to the chemical structure of the films. The surface energy decreased by 40% as the Si content of the SiO(x) incorporated DLC films increased to 13 at.%. The cell adhesion properties however did not change in response to lowering of the surface energy. The incorporation of both Si and SiO(x) leads to a beneficial reduction in the residual stress of the films. The average roughness of the films increases and the hardness decreases when Si and SiO(x) are added to DLC films. The impact of these changes for load-bearing biomedical applications can be determined only by carefully controlled experiments using anatomic simulators.

  7. Epitaxial growth of Ti{sub 3}SiC{sub 2} thin films with basal planes parallel or orthogonal to the surface on {alpha}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Drevin-Bazin, A.; Barbot, J. F.; Alkazaz, M.; Cabioch, T.; Beaufort, M. F. [Institut Pprime, UPR 3346, CNRS-Universite de Poitiers-ENSMA, Departement de Physique et Mecanique des Materiaux, SP2MI, Teleport 2, Bd M. et P. Curie, BP 30179, F-86962 Futuroscope-Chasseneuil (France)

    2012-07-09

    The growth of Ti{sub 3}SiC{sub 2} thin films were studied onto {alpha}-SiC substrates differently oriented by thermal annealing of TiAl layers deposited by magnetron sputtering. For any substrate's orientation, transmission electron microscopy coupled with x-ray diffraction showed the coherent epitaxial growth of Ti{sub 3}SiC{sub 2} films along basal planes of SiC. Specifically for the (1120) 4H-SiC, Ti{sub 3}SiC{sub 2} basal planes are found to be orthogonal to the surface. The continuous or textured nature of Ti{sub 3}SiC{sub 2} films does not depend of the SiC stacking sequence and is explained by a step-flow mechanism of growth mode. The ohmic character of the contact was confirmed by current-voltage measurements.

  8. Measurements of SiO2 glass surface parameters by methods of microscopy

    Science.gov (United States)

    Gavars, Eduards; Svagere, Anda; Skudra, Atis; Zorina, Natalia; Poplausks, Raimonds

    2012-08-01

    In this research we compare chemical and plasma treatment methods for surface of SiO2 glass. For chemical treatment of surface tequila and alcohol were used but for plasma treatment - Ar+As and Ar+Se plasmas. Surface topography was analyzed using atomic force microscope. Comparison of chemical and plasma treatment methods shows that surface treated with plasma is smoother. Because of their various chemical compositions tequila and alcohol show different results.

  9. Transport Properties and Surface Morphology Correlated Studies on Graphene Formed by Si Desorption of 6H-SiC

    Science.gov (United States)

    Roach, William; Beringer, Douglas; Skuza, Jonathan; Clavero, Cesar; Lukaszew, Rosa Alejandra

    2009-11-01

    Interest in graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has increased in recent years due to exciting characteristics such as its predicted high mobility [1]. However, developing a method to produce graphene that is easily integrated into existing fabrication processes has proved difficult thus far. One promising method is high temperature annealing of 6H-SiC such that Si desorption occurs [2], although this method leads to graphene that exhibits lower mobility than predicted [3]. Thus, we have investigated the relationship between different growth conditions (i.e. annealing time and temperature), the resulting surface morphology and the transport properties of graphene films produced using this method. Raman spectroscopy, atomic force microscopy, and Van der Pauw Hall mobility measurements have been used to correlate the surface morphology to transport properties of graphene formed on SiC. Understanding the effect of growth conditions on the resulting transport properties will help optimize the fabrication of graphene for use in the next generation of electronic devices and other applications. [1] Novoselov et al., Science 306, 666 (2004). [2] C. Berger et al., J. Phys. Chem. B 108, 19912 (2004). [3] G. Gu et al., Appl. Phys. Lett. 90, 253507 (2007).

  10. Surface passivation effects on the electronic and optical properties of 3C-SiC nanocrystals

    Science.gov (United States)

    Javan, Masoud Bezi

    2015-01-01

    Using time-dependent density functional theory the optical absorption spectrum of SiC nanocrystals was studied with changes in their surface structures as they are passivated with some functional groups such as amine (-NH2), amide (-CONH2), hydroxyl (-OH), carboxylic acid (-CO2H) and thiol (-SH) groups. The variations of some quantities such as formation energy, optical gap, single particle energy gap and lowest exciton binding energy of SiC nanocrystals are discussed with changes in their surface structure. Results indicate that in all cases the silicon dangling bonds on the surface of SiC nanocrystals are favorable for constructing stable structures with attached functional groups as in some cases their stability is more than pure hydrogenated SiC nanocrystal as an ideal structure. Also the functional groups attached to the surface of SiC nanocrystals change the optical properties of the SiC nanocrystals as the changes are remarkable for amide and thiol passivated nanocrystals.

  11. Surface passivation effects on the electronic and optical properties of 3C-SiC nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Javan, Masoud Bezi, E-mail: javan.masood@gmail.com

    2015-01-01

    Using time-dependent density functional theory the optical absorption spectrum of SiC nanocrystals was studied with changes in their surface structures as they are passivated with some functional groups such as amine (–NH{sub 2}), amide (–CONH{sub 2}), hydroxyl (–OH), carboxylic acid (–CO{sub 2}H) and thiol (–SH) groups. The variations of some quantities such as formation energy, optical gap, single particle energy gap and lowest exciton binding energy of SiC nanocrystals are discussed with changes in their surface structure. Results indicate that in all cases the silicon dangling bonds on the surface of SiC nanocrystals are favorable for constructing stable structures with attached functional groups as in some cases their stability is more than pure hydrogenated SiC nanocrystal as an ideal structure. Also the functional groups attached to the surface of SiC nanocrystals change the optical properties of the SiC nanocrystals as the changes are remarkable for amide and thiol passivated nanocrystals.

  12. Superamphiphobic surfaces constructed by cross-linked hollow SiO2 spheres

    Science.gov (United States)

    Cui, Weihao; Wang, Tao; Yan, Aili; Wang, Sheng

    2017-04-01

    By using stringed carbon spheres as template material, a series of hierarchical 3D cross-linked SiO2 coated carbon spheres and hollow SiO2 spheres were fabricated, and spray-coated on glass slides, followed by the fluorination treatment with per-fluorotrichlorosilane. The surface characterization and surface wettability data indicated that hollow SiO2 spheres spray-coated surfaces showed better superhydrophobicity and superoleophobcity properties than the corresponding solid C@SiO2 coated surface. This study further demonstrated that superamphiphobicity depends on two critical factors, namely a cavity- and spot-rich hierarchical structure and the size and shape of overhangs. Moreover, the optimal conditions for the preparation of hollow SiO2 coated glass slide were identified after a systematic investigation of various concentrations of the carbon precursor and tetraethylorthosilicate. It was found that when 0.10 g carbon spheres prepared from 1.0 M carbon precursor were used as the template and 20 mg/mL tetraethylorthosilicate was used as silica precursor, the hollow SiO2 coated glass slide exhibited the best superamphiphobic performance, with the highest contact angles and lowest sliding angles for various liquids, such as water, olive oil, n-hexadecane and n-dodecane.

  13. P-type transparent conducting oxides

    Science.gov (United States)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

  14. Methods for growth of relatively large step-free SiC crystal surfaces

    Science.gov (United States)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  15. Density-functional study of Mn monosilicide on the Si(111) surface: Film formation versus island nucleation

    Science.gov (United States)

    Hortamani, Mahbube; Kratzer, Peter; Scheffler, Matthias

    2007-12-01

    The stability of thin films and of small crystallites of Mn monosilicide (MnSi) on the Si(111) surface is investigated by density-functional theory calculations. Extending previous studies of MnSi/Si(001) , our calculations indicate that MnSi films on Si(111) have similar electronic and magnetic properties, i.e., large magnetic moments at the Mn atoms near the surfaces and interfaces and a high degree of spin polarization at the Fermi level. Hence, such MnSi films could be interesting as a spintronics material compatible with silicon. Moreover, from our calculated total energies we conclude that the Si(111) substrate should be more suitable to grow MnSi layers than the Si(001) substrate. This result is obtained by analyzing the conditions for the formation of three-dimensional (3D) MnSi islands, either in the B20 crystal structure or as pseudomorphic islands in the B2 structure: On Si(001), 3D islands, even if they are just a few lattice constants wide, are found to be already more stable than a homogeneous MnSi film. A bipyramidal “iceberg” island consisting of MnSi in the B20 structure on the Si(001) substrate is found to be most stable among the structures investigated. For MnSi on Si(111), however, our calculations show that the nucleus for forming a 3D island is larger. Therefore, Mn deposition initially leads to the formation of flat 2D islands. On Si(111), the lowest-energy structure for such islands is found to be similar to the B20 structure of bulk MnSi, whereas on Si(001) this structure is incompatible with the substrate lattice. Our results are in agreement with the experimental observations, formation of an almost closed film with (3×3) structure on Si(111), and 3D island formation on Si(001).

  16. Atomic dipole moment distribution of Si atoms on a Si111-(7 x 7) surface studied using noncontact scanning nonlinear dielectric microscopy.

    Science.gov (United States)

    Cho, Yasuo; Hirose, Ryusuke

    2007-11-02

    A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7 x 7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7 x 7) surface is measured. At the weak applied voltage of -0.5 V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.

  17. Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    Energy Technology Data Exchange (ETDEWEB)

    Gassoumi, Malek, E-mail: malek.gassoumi@fsm.rnu.tn; Mosbahi, Hana; Zaidi, Mohamed Ali [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia); Gaquiere, Christophe [Universite des Sciences et Technologies de Lille, Institut d' Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France); Maaref, Hassen [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)

    2013-07-15

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

  18. Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation

    Energy Technology Data Exchange (ETDEWEB)

    Abhaya, S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amarendra, G. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)], E-mail: amar@igcar.gov.in; Venugopal Rao, G.; Rajaraman, R.; Panigrahi, B.K.; Sastry, V.S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2007-09-25

    Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

  19. Self-organized arrays of Cd nanocluster on Si (111)-7×7 surface

    Science.gov (United States)

    Hao, Shao-Jie; Xiao, Hua-Fang; Ye, Juan; Sun, Kai; Tao, Min-Long; Tu, Yu-Bing; Wang, Ya-Li; Xie, Zheng-Bo; Wang, Jun-Zhong

    2017-02-01

    We studied the self-organization of Cd clusters on Si(111)-7×7 surface with an ultrahigh vacuum scanning tunneling microcopy (STM). Highly-ordered arrays of Cd nanoclusters have been fabricated by elevating the substrate temperature. The Cd clusters occupy equally the faulted and unfaulted half-unit cells of Si(111)-7×7 without obvious preference to either of them, forming Cd cluster pairs or hexamers. Furthermore, high-resolution STM images demonstrate that the charge transfer between Cd and Si atoms is responsible for cluster-cluster attractions, which in turn drive the self-organization of Cd nanoclusters into highly ordered arrays.

  20. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

    2014-11-30

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

  1. Ab initio study of subsurface diffusion of Cu on the H-passivated Si(001) surface

    Science.gov (United States)

    Rodriguez-Prieto, A.; Bowler, D. R.

    2009-10-01

    In this paper we use density-functional theory calculations to analyze both the stability and diffusion of Cu adatoms near and on the H-passivated Si(001) surface. Two different Cu sources are considered: depositing Cu from vacuum, and contaminating Cu outdiffusing from bulk Si. Deposited Cu from vacuum quickly moves subsurface to an interstitial site in the third Si layer (T2). Once there, Cu adatoms enter a subsurface zigzag migration route between T2 and another subsurface site, T2→HSL→T2 , along the dimer row direction. Contaminating Cu outdiffusing from bulk is found to be a fast diffuser along both parallel and perpendicular directions to the dimer row when far from the surface. It is attracted to the layers close to the surface and becomes trapped at an interstitial site located at the sixth Si layer (T3). As the outdiffusing Cu atoms get closer to the surface, a channeling zigzag diffusion along the dimer row direction, similar to that one followed by deposited Cu from vacuum, is favoured over diffusion along the perpendicular direction. These results are consistent with previous experimental work done on similar systems and will motivate further experiments on the interesting interaction between Cu and Si surfaces.

  2. Sum frequency generation spectroscopy study of hydrogenated stepped Si(111) surfaces made by molecular hydrogen exposure

    Science.gov (United States)

    Hien, K. T. T.; Sattar, M. A.; Miyauchi, Y.; Mizutani, G.; Rutt, H. N.

    2017-09-01

    Hydrogen adsorption on stepped Si(111) surfaces 9.5° miscut in the [ 1 ̅ 1 ̅ 2 ] direction has been investigated in situ in a UHV chamber with a base pressure of 10-8 Pa. The H-Si(111)1×1 surface was prepared by exposing the wafer to ultra-pure hydrogen gas at a pressure of 470 Pa. Termination of hydrogen on terraces and steps was observed by sum frequency generation (SFG) with several polarization combinations such as ppp, ssp, pps, spp, psp, sps, pss and sss. Here the 1st, 2nd and 3rd symbols indicate SFG, visible and IR polarizations, respectively. ppp and ssp-SFG clearly showed only two modes: the Si-H stretching vibration terrace mode at 2082 cm-1 (A) and the vertical step dihydride vibration mode at 2094 cm-1 (C1). Interesting points are the appearance of the C1 mode in contrast to the previous SFG spectrum of the H-Si(111)1×1 surface with the same miscut surface angle prepared by wet chemical etching. We suggest that the formation of step dihydride and its orientation on the Si(111) stepped surfaces depend strongly on the preparation method.

  3. Effect of Wet Surface Treated Nano-SiO2 on Mechanical Properties of Polypropylene Composite

    Institute of Scientific and Technical Information of China (English)

    WANG Dongbo; FENG Yujie; HAN Liwei; TIAN Yan

    2008-01-01

    Nano-SiO2/polypropylene composite was prepared by melt-blending process. The nano-SiO2 particles were organized by wet process surface treatment with silane coupling agent KH-570. The effect of mass fraction of nano-SiO2 particles and dosage of KH-570 on the toughening and strengthening of PP matrix were investigated based on the fractography of impact notch and the analysis of crystal structure by X-ray and dispersive structure of nano-SiO2 by TEM. Results show that the impact and flexural strength and modulus of the composite are improved obviously with low loading of nano-SiO2 (3wt%-5wt%), and the izod impact strength of PP increases twice with 4wt% nano-SiO2. The nano-SiO2 particles treated can disperse into the matrix resin, which has evident heterogeneous nucleation effects on the crystallization of PP. The optimal toughening and strengthening effects of PP matrix can be obtained when the content of nano-SiO2 and KH-570 are 4wt% and 3wt%, respectively.

  4. Verifying field-effect passivation of a SiNx layer on a silicon nanopillar array using surface photovoltage characterization

    Science.gov (United States)

    Kim, Eunah; Cho, Yunae; Sohn, Ahrum; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

    In silicon (Si) wafer based photovoltaic (PV) devices, light-trapping strategies to improve optical absorption are very important due to the indirect bandgap of Si. Surface nano-patterned Si enable omnidirectional broadband antireflection (AR) effects with the help of graded refractive index, multiple scattering, diffraction, and Mie resonance. In this work, the surface photovoltage (SPV) of periodic nanopillar (NP) arrays were investigated using Kelvin probe force microscopy (KPFM). The SPV characteristics clearly revealed that positive fixed charges in SiNx layers induced downward band bending at the Si surface and increased SPV at the NP top surface. The similar SPV value of NPs and planar counterpart suggests that field effect passivation by the dielectric layer coating could help improve PV performance of nanostructure-based Si solar cells and that KPFM measurements are useful tool for quantitative investigation of surface electrical properties of Si nanostructures.

  5. The adsorption and reaction of fluorine on the Si(100) surface

    Science.gov (United States)

    Engstrom, J. R.; Nelson, Mark M.; Engel, Thomas

    1989-05-01

    The adsorption and reaction of both molecular and atomic flourine with the Si(100) surface has been examined under ultraligh vacuum conditions with supersonic molecular beam techniques, X-ray photoelectron spectroscopy (XPS), quadrupole mass spectrometry and low-energy ion scattering spectroscopy. Molecular flourine adsorbs dissociatively on the clean Si(100) surface with an initial (zero-coverage) probability of the adsorption of 0.46±0.02, which is essentially independent of both the incident beam energy (flouride adlayers, produced by exposing the clean Si(100) surface a 120 K to a beam of flourine, yielded SiF 2(g) and SiF 4(g) as the only gas phase reaction products. The relative yield to these two gas phase reaction products dependes strongly on the initial coverage of the flourine adatoms-below ˜ ML, SiF 2(g) in the major reaction product, whereas above ˜3 ML, the yield of SiF 2(g) remains constant while that of SiF 2(g) increases continuously. Above initial coverages of 2 ML, the thermal decomposition is terminated near 800 K by the removal of one monolayer of the silicon substrate in the form of SiF 2(g). A detailed analysis of the decomposition for coverages of 3 ML revealed complex behavior, the kinetics depending sensitively on the initial coverage of flourin adatome. For example, for initial coverages of 1-1.3 ML, zero-order kinetics were found to apply as the coverage decreases from 1.0 to 0.3 ML. A qualitative assessment of the adlayer configuration following partial decomposition suggests that the thermal decomposition in the zero-order regime proceeds inhomogenously, leaving separate domains where the local coverage of flourine is either near saturation or zero. We suggest that the spatially inhomogenous decomposition is a manifestation of preferential reactivity at surface defects such as atomic steps. Investigation of the steady-state reaction of preferential reactivity at surface defects such as atomic steps. Investigation of the steady

  6. Defect reduction and surface passivation of SiO{sub 2}/Si by heat treatment with high-pressure H{sub 2}O vapor

    Energy Technology Data Exchange (ETDEWEB)

    Sameshima, T.; Sakamoto, K.; Asada, K. [Tokyo Univ. of Agriculture and Technol. (Japan)

    1999-08-01

    Heat treatment with high-pressure H{sub 2}O vapor was applied to improve interface properties of SiO{sub 2}/Si and passivate the silicon surface. Heat treatment at 180-420 C with high-pressure H{sub 2}O vapor changed SiO{sub x} films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO{sub 2} films with a Si-O-Si bonding network similar to that of thermally grown SiO{sub 2} films. Heat treatment at 130 C with 2.8 x 10{sup 5} Pa H{sub 2}O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiO{sub x}/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiO{sub x} films on the SiO{sub 2} films formed by heat treatment at 340 C with high-pressure H{sub 2}O vapor. The SiO{sub x} deposition reduced the recombination velocity from 100 cm/s to 48 cm/s. (orig.) With 3 figs., 15 refs.

  7. Defect reduction and surface passivation of SiO2/Si by heat treatment with high-pressure H2O vapor

    Science.gov (United States)

    Sameshima, T.; Sakamoto, K.; Asada, K.

    Heat treatment with high-pressure H2O vapor was applied to improve interface properties of SiO2/Si and passivate the silicon surface. Heat treatment at 180-420 °C with high-pressure H2O vapor changed SiOx films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO2 films with a Si-O-Si bonding network similar to that of thermally grown SiO2 films. Heat treatment at 130 °C with 2.8×105 Pa H2O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiOx/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiOx films on the SiO2 films formed by heat treatment at 340 °C with high-pressure H2O vapor. The SiOx deposition reduced the recombination velocity from 100 cm/s to 48 cm/s.

  8. What a difference a bond makes: the structural, chemical, and physical properties of methyl-terminated Si(111) surfaces.

    Science.gov (United States)

    Wong, Keith T; Lewis, Nathan S

    2014-10-21

    The chemical, electronic, and structural properties of surfaces are affected by the chemical termination of the surface. Two-step halogenation/alkylation of silicon provides a scalable, wet-chemical method for grafting molecules onto the silicon surface. Unlike other commonly studied wet-chemical methods of surface modification, such as self-assembly of monolayers on metals or hydrosilylation on silicon, the two-step method enables attachment of small alkyl chains, even methyl groups, to a silicon surface with high surface coverage and homogeneity. The methyl-terminated Si(111) surface, by comparison to hydrogen-terminated Si(111), offers a unique opportunity to study the effects of the first surface bond connecting the overlayer to the surface. This Account describes studies of methyl-terminated Si(111), which have shown that the H-Si(111) and CH3-Si(111) surfaces are structurally nearly identical, yet impart significantly different chemical and electronic properties to the resulting Si surface. The structure of methyl-terminated Si(111) formed by a two-step halogenation/methylation process has been studied by a variety of spectroscopic methods. A covalent Si-C bond is oriented normal to the surface, with the methyl group situated directly atop a surface Si atom. Multiple spectroscopic methods have shown that methyl groups achieve essentially complete coverage of the surface atoms while maintaining the atomically flat, terraced structure of the original H-Si(111) surface. Thus, the H-Si(111) and CH3-Si(111) surface share essentially identical structures aside from the replacement of a Si-H bond with a Si-C bond. Despite their structural similarity, hydrogen and methyl termination exhibit markedly different chemical passivation. Specifically, CH3-Si(111) exhibits significantly greater oxidation resistance than H-Si(111) in air and in aqueous electrolyte under photoanodic current flow. Both surfaces exhibit similar thermal stability in vacuum, and the Si-H and Si

  9. Effect of surface modification of low cost mesoporous SiO2 carriers on the properties of immobilized lipase.

    Science.gov (United States)

    Zou, Bin; Hu, Yi; Cui, Fengjie; Jiang, Ling; Yu, Dinghua; Huang, He

    2014-03-01

    To investigate the surface effects of low cost mesoporous SiO2 on the properties of lipase, a series of modified mesoporous SiO2 was synthesized through various alkoxysilanes reacted with hydroxyl of SiO2 (C1-SiO2, C8-SiO2, C16-SiO2, SH-SiO2, Ph-SiO2, NH2-SiO2). Particularly, ionic liquids as novel alkoxysilane were synthesized and subjected to modify the low cost mesoporous SiO2 (CH3IL-SiO2 and COOHIL-SiO2). The porcine pancreas lipase (PPL) was immobilized on the prepared materials. The activity assay indicated that the activation of enzymatic activity site was benefit from the longer alkyl chain of alkoxysilane because of the growing hydrophobic nature. Nevertheless, the loading of lipase decreased from 69% for PPL-C1-SiO2 to 59% for PPL-C16-SiO2, reflecting the growing hydrophobic property limited the immobilization yield. The characteristic of alkoxysilane group (SH-SiO2, Ph-SiO2, NH2-SiO2) was another important factor to influence immobilization efficiency and enzymatic performance besides the alkyl chain length. The immobilization efficiency of PPL-SH-SiO2, PPL-Ph-SiO2 and PPL-NH2-SiO2 maintained at least 93%. Compared with conventional alkoxysilane, the activity of PPL-CH3IL-SiO2 improved to 2.60 folds of PPL-SiO2. The immobilization efficiency of PPL-COOHIL-SiO2 was up to 97% and the relative activity was above 62% after five recycles.

  10. Surface Selective Oxidation of Sn-Added CMnSi TRIP Steel

    Science.gov (United States)

    Cho, Lawrence; Seo, Eun Jung; Jung, Geun Su; Suh, Dong Woo; De Cooman, Bruno C.

    2016-04-01

    The influence of the addition of Sn on the selective oxidation and the reactive wetting of CMnSi transformation-induced plasticity (TRIP) steels was studied by means of galvanizing simulator tests. A reference TRIP steel and TRIP steels containing Sn in the range of 0.05 to 1 wt pct were intercritically annealed at 1093 K (820 °C) in an N2+ 5 pct H2 gas atmosphere with a dew point of -60 °C. The thin-film oxides formed on the surface of the Sn-added CMnSi TRIP steel were investigated using transmission electron microscopy and 3-dimensional atom probe tomography. The addition of Sn (≥0.05 wt pct) changed the morphology of the xMnO·SiO2 surface oxides from a continuous film morphology to a lens-shaped island morphology. It also suppressed the formation of the Mn-rich oxides of MnO and 2MnO·SiO2. The changes in the morphology and chemistry of the surface oxides were clearly related to the surface segregation of Sn, which appeared to result in a decrease of the oxygen permeability at the surface. The formation of lens-shaped oxides improved the wettability of the CMnSi TRIP steel surface by the molten Zn. The improved wetting effect was attributed to an increased area fraction of the surface where the oxide layer was thinner. This enabled a direct, unhindered reaction between Fe and the Al in the liquid Zn and the formation of the inhibition layer in the initial stages of the hot dipping. The addition of a small amount of Sn was also found to decrease significantly the density of Zn-coating defects on CMnSi TRIP steel.

  11. Growth kinetics of indium metal atoms on Si(1 1 2) surface

    Energy Technology Data Exchange (ETDEWEB)

    Raj, Vidur; Chauhan, Amit Kumar Singh; Gupta, Govind, E-mail: govind@nplindia.org

    2015-12-15

    Graphical abstract: Controlled growth of indium atoms on Si(1 1 2) surface has been carried out systematically and the influence of substrate temperature on the kinetics is analysed under various growth conditions. Temperature induced anomalous layer-to-clusters transformation during thermal desorption has also been reported. - Highlights: • Controlled growth of indium atoms on Si(1 1 2) surface & their thermal stability. • Influence of substrate temperature on the kinetics under various growth conditions. • Temperature induced layer-to-clusters transformation during thermal desorption. - Abstract: The growth kinetics and desorption behavior of indium (In) atoms grown on high index Si(1 1 2) surface at different substrate temperatures has been studied. Auger electron spectroscopy analysis revealed that In growth at room temperature (RT) and high substrate temperature (HT) ∼250 °C follows Frank–van der Merve growth mode whereas at temperatures ≥450 °C, In growth evolves through Volmer–Weber growth mode. Thermal desorption studies of RT and 250 °C grown In/Si(1 1 2) systems show temperature induced rearrangement of In atoms over Si(1 1 2) surface leading to clusters to layer transformation. The monolayer and bilayer desorption energies for RT grown In/Si(1 1 2) system are calculated to be 2.5 eV and 1.52 eV, while for HT-250 °C the values are found to be 1.6 eV and 1.3 eV, respectively. This study demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway of In on Si(1 1 2) surface.

  12. Global Mg/Si and Al/Si Distributions on the Lunar Surface Derived from Chang'E-2 X-ray Spectrometer

    Science.gov (United States)

    Dong, Wu-Dong; Zhang, Xiao-Ping; Zhu, Meng-Hua; Xu, Ao-Ao; Tang, Ze-Sheng

    2016-01-01

    The technique of X-ray fluorescence remote sensing plays a significant role in research related to the chemical compositions of the Moon. Here we describe the data analysis method for China's Chang'E-2 X-ray spectrometer in detail and present the preliminary results about the first global Mg/Si and Al/Si maps of the lunar surface. Our results show that the distributions of Mg/Si and Al/Si correlate well with terrains on the Moon. The higher Mg/Si ratio corresponds to the mare regions while the lower value corresponds to the highland terrains. The map of the Al/Si ratio shows a reversed distribution compared with the map of the Mg/Si ratio.

  13. Global Mg/Si and Al/Si Distributions on Lunar Surface Derived from Chang'E-2 X-ray Spectrometer

    CERN Document Server

    Dong, Wu-Dong; Zhu, Meng-Hua; Xu, Aoao; Tang, Zesheng

    2015-01-01

    X-ray fluorescence remote sensing technique plays a significant role in the chemical compositions research of the Moon. Here we describe the data analysis method for China's Chang'E-2 X-ray spectrometer (CE2XRS) in detail and present the preliminary results: the first global Mg/Si and Al/Si maps on the lunar surface. Our results show that the distributions of Mg/Si and Al/Si correlate well with the terrains of the Moon. The higher Mg/Si ratio corresponding to the mare regions while the lower value corresponding to the highland terrains. The map of Al/Si ratio shows a reverse relationship with the map of Mg/Si ratio.

  14. Field effect surface passivation of SiO{sub 2}/Si interfaces by heat treatment with high-pressure H{sub 2}O vapor

    Energy Technology Data Exchange (ETDEWEB)

    Sakamoto, K.; Asada, K.; Sameshima, T. [Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, 184-8588 Tokyo (Japan)

    2001-01-01

    We investigated a simple field effect passivation of the silicon surfaces using the high-pressure H{sub 2}O vapor heating. Heat treatment with 2.1x10{sup 6}Pa H{sub 2}O vapor at 260C for 3h reduced the surface recombination velocity from 405cm/s (before the heat treatment) to 38cm/s for the thermally evaporated SiO{sub x} film/Si. Additional deposition of 140nm-SiO{sub x} films (x<2) with a high density of fixed positive charges on the SiO{sub 2}/Si samples further decreased the surface recombination velocity to 22cm/s. We also demonstrated the field effect passivation for n-type silicon wafer coated with thermally grown SiO{sub 2}. Additional deposition of 210nm SiO{sub x} films on both the front and rear surfaces increased the effective lifetime from 1.4 to 4.6ms. Combination of thermal evaporation of SiO{sub x} film and the heat treatment with high-pressure H{sub 2}O vapor is effective for low-temperature passivation of the silicon surface.

  15. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Valladares, L. de los Santos, E-mail: ld301@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Dominguez, A. Bustamante [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Llandro, J.; Holmes, S. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Quispe, O. Avalos [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Langford, R. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Laboratório de Supercondutividade e Materiais Avançados, Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife (Brazil); Barnes, C.H.W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom)

    2014-10-15

    Highlights: • Annealing promotes outgassing of SiO{sub 2}/Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO{sub 2} islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO{sub 2}/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10{sup 8}, respectively. Over an area of 22 × 10{sup −3} cm{sup 2} the density of bubbles obtained at slow annealing (9 × 10{sup 3} cm{sup −2}) is smaller than that at rapid annealing (6.4 × 10{sup 4} cm{sup −2}), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as

  16. Oxidation of the Si(100) surface promoted by Sr overlayer - An X-ray photoemission study. [high temperature superconductors

    Science.gov (United States)

    Mesarwi, A.; Fan, W. C.; Ignatiev, A.

    1990-01-01

    The interaction of strontium films with the underlaying Si (100) surface and the Sr-promoted low-temperature oxidation of Si were investigated, using XPS, at three different Sr coverages (theta): theta = 0.55 monolayer (ML), theta = 1 ML, and theta = 1.85 ML. Oxygen adsorption was studied both at room temperature and at 500 C, and at oxygen exposures up to 2 x 10 to the 6th L (1 L = 10 to the -6th torr) and 2 x 10 to the 5th L, respectively. The XPS spectra of the Si2p, O1s, and Sr3d core levels were measured for the atomically clean Si, the Sr-covered Si, and for the Sr-covered Si after each oxygen exposure. Results indicate that Sr interacts with the Si(100) surface forming a strong ionic bond, and that Sr promotes the oxidation of the Si (100) surface.

  17. Capillary-force measurement on SiC surfaces

    Science.gov (United States)

    Sedighi, M.; Svetovoy, V. B.; Palasantzas, G.

    2016-06-01

    Capillary forces have been measured by atomic force microscopy in the sphere-plate geometry, in a controlled humidity environment, between smooth silicon carbide and borosilicate glass spheres. The force measurements were performed as a function of the rms surface roughness ˜4-14 nm mainly due to sphere morphology, the relative humidity (RH) ˜0%-40%, the applied load on the cantilever, and the contact time. The pull-off force was found to decrease by nearly two orders of magnitude with increasing rms roughness from 8 to 14 nm due to formation of a few capillary menisci for the roughest surfaces, while it remained unchanged for rms roughness <8 nm implying fully wetted surface features leading to a single meniscus. The latter reached a steady state in less than 5 s for the smoothest surfaces, as force measurements versus contact time indicated for increased RH˜40%. Finally, the pull-off force increases and reaches a maximum with applied load, which is associated with plastic deformation of surface asperities, and decreases at higher loads.

  18. Buckling of reconstruction elements of the edges of triple steps on vicinal Si(111) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhachuk, R. A., E-mail: zhachuk@gmail.com [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Coutinho, J. [University of Aveiro, Campus Santiago, I3N, Department of Physics (Portugal); Rayson, M. J. [University of Surrey, Department of Chemistry (United Kingdom); Briddon, P. R. [Newcastle University, School of Electrical, Electronic and Computer Engineering (United Kingdom)

    2015-04-15

    The structure of steps with a height of three (111) interplanar distances on vicinal Si(111) surfaces has been analyzed through density functional theory calculations. It has been shown that several stable atomic configurations are possible depending on the buckling of the reconstruction elements of edges of the steps on the surface. It has been found that the direction of the buckling of reconstruction elements in the ground state of the surface is determined by the Coulomb interaction with their nearest atomic environment.

  19. Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature

    Institute of Scientific and Technical Information of China (English)

    Qi Le-Jun; Ling Li; Li Wei-Qing; Yang Xin-Ju; Gu Chang-Xin; Lu Ming

    2005-01-01

    Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperature to 800℃, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface roughness increases steadily. The usually-accepted Bradley-Harper model fails to explain these data. By taking into account the Ehrlich-Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results.

  20. Identification of luminescent surface defect in SiC quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Dejian; Guo, Xiaoxiao; Fan, Jiyang, E-mail: jyfan@seu.edu.cn [Department of Physics, Southeast University, Nanjing 211189 (China)

    2015-02-02

    The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HO···C=O [n{sub (OH)} → π*{sub (CO)}] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438 nm. Another surface defect (Si–Si) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.

  1. Alane adsorption and dissociation on the Si(0 0 1) surface

    Science.gov (United States)

    Smith, R. L.; Bowler, D. R.

    2017-10-01

    We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(0 0 1) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We calculated the energies of various structures along the pathway of successive dehydrogenation events following adsorption: AlH2, AlH and Al, finding a gradual, significant decrease in energy. For each stage, we analyse the structure and bonding, and present simulated STM images of the lowest energy structures. Finally, we find that the energy of Al atoms incorporated into the surface, ejecting a Si atom, is comparable to Al adatoms. These findings show that Al incorporation is likely to be as precisely controlled as P incorporation, if slightly less easy to achieve.

  2. Superhydrophobic and oleophobic surface from fluoropolymer-SiO2 hybrid nanocomposites.

    Science.gov (United States)

    Wang, Li; Liang, Junyan; He, Ling

    2014-12-01

    The fluoropolymer-SiO2 hybrid nanocomposite consisting of core-corona fluoropolymer-grafted SiO2 nanoparticle (NP) and poly(dodecafluoroheptyl methacrylate) (PDFHM) was obtained by radical solution polymerization of the vinyl trimethoxy silane (VTMS)-treated SiO2 NP with DFHM in this work. In H2O/tetrahydrofuran (THF) solution, PDFHM self-assembles into dendritic micelle and the increase in H2O volume is favorable for fluoropolymer-grafted SiO2 NPs to create dense fluoropolymer corona layer. It also shows that the addition of H2O to the THF suspension of fluoropolymer-SiO2 nanocomposite could cause a transfer for surface morphology of cast film from smooth film-covered aggregation to bare-exposed flaky aggregation and microsphere aggregation, which results in an increase in surface RMS roughness of cast film and induces a superhydrophobicity. Oleophobicity of cast film can be improved by thermal annealing, because strong surface self-segregation of PDFHM chains during thermal annealing process arouses a marked increase in surface fluorine content.

  3. Laser-induced emission of atoms and electrons from deposited Si atoms on the Si(100) 2x1 surface

    Energy Technology Data Exchange (ETDEWEB)

    Yu, In Keun; Kanasaki, Jun' ichi; Nakai, Yasuo; Itoh, Noriaki [Nagoya Univ., Nagoya (Japan)

    1998-07-01

    We have measured the emissions of electrons and Si atoms induced by laser irradiation on a Si(100) 2x1 surface with Si atoms deposited in a coverage range between 4.6 x 10{sup -4} and 1.67 x 10{sup -1} monolayers (ML) at room temperature. Two types of configurations, referred to as configuration R and S, of deposited atoms are differentiated.. The atom emission from configuration R occurs above a laser fluence of 310 mJ/cm{sup 2} for 28-ns laser pulses with a photon energy of 2.48 eV, while that from configuration S occurs only above a fluence of 540 mJ/cm{sup 2}. The electron emission from configuration R gives rise to a peak at a binding energy of 5.0 eV, while that from configuration S gives rise to a peak at 4.85 eV. Component R grows in proportion to the Si coverage in a coverage range below 4.0 x 10{sup -2} ML and then saturates, while component S grows in proportion to the square of the coverage at initial stage before saturation occurs. The yield of atom emitted from configuration S is reduced only for small coverages. Based on the number of atoms emitted by laser irradiation, the concentrations of configuration R and S after saturation were estimated to be 1.2 x 10{sup -4} ML and 1.94 x 10{sup -3} ML, respectively. It is suggested that configuration R is an adatom weakly bonded by the step edge or a defect and configuration S is an ad-dimer.

  4. Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

    DEFF Research Database (Denmark)

    Hermansson, Karin; Grey, Francois; Bengtsson, Stefan;

    1998-01-01

    Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading...

  5. Lowest surface recombination velocity on n-type crystalline silicon using PECVD a-Si:H/SiNx bi-layer passivation

    Science.gov (United States)

    Stepanov, Dmitri S.; Chowdhury, Zahidur R.; Kherani, Nazir P.

    2011-08-01

    Energy conversion efficiency of crystalline silicon (c-Si) solar cells manufactured on thin substrates is strongly influenced by the recombination losses of photo-generated charge carriers at the surface and in its proximity. Intrinsic hydrogenated amorphous silicon (i-a-Si:H) deposited using DC saddle-field plasma enhanced chemical vapour deposition (PECVD) at a low temperature of ~200°C reduces recombination losses of photo-generated carriers through passivation of defects at the surface. This study reports on high quality surface passivation achieved using a dual layer approach wherein a 70nm amorphous silicon nitride (SiNx) capping layer is deposited on a less than 10nm thin i-a-Si:H layer. While the a-Si:H layer is effective in passivating the interface recombination sites, SiNx is deemed to incorporate field-effect passivation, thus providing a minority carrier mirror. Additionally, SiNx layer acts as an anti-reflection coating with a low absorption coefficient in the optical frequency range of interest. The SiNx deposition conditions, known to strongly influence the passivating quality of the dual layer structure, were systematically investigated using the response surface methodology (RSM). The optimal deposition parameters obtained from the RSM study were experimentally verified to yield the lowest surface recombination velocity of 3.5 cm/s on 1-2 Ω-cm n-type FZ c-Si using a PECVD a-Si:H/SiNx bi-layer passivation stack.

  6. Capillary-force measurement on SiC surfaces

    NARCIS (Netherlands)

    Sedighi, M.; Svetovoy, V. B.; Palasantzas, G.

    2016-01-01

    Capillary forces have been measured by atomic force microscopy in the sphere-plate geometry, in a controlled humidity environment, between smooth silicon carbide and borosilicate glass spheres. The force measurements were performed as a function of the rms surface roughness similar to 4-14 nm mainly

  7. Adsorption of ethylene on Sn and In terminated Si(001) surface studied by photoelectron spectroscopy and scanning tunneling microscopy.

    Science.gov (United States)

    Zimmermann, Petr; Sobotík, Pavel; Kocán, Pavel; Ošt'ádal, Ivan; Vorokhta, Mykhailo; Acres, Robert George; Matolín, Vladimír

    2016-09-07

    Interaction of ethylene (C2H4) with Si(001)-Sn-2 × 2 and Si(001)-In-2 × 2 at room temperature has been studied using core level (C 1s) X-ray photoelectron spectroscopy with synchrotron radiation and scanning tunneling microscopy. Sn and In form similar dimer chains on Si(001)2 × 1, but exhibit different interaction with ethylene. While ethylene adsorbs on top of Sn dimers of the Si(001)-Sn-2 × 2 surface, the Si(001)-In-2 × 2 surface turned out to be inert. Furthermore, the reactivity of the Sn terminated surface is found to be considerably decreased in comparison with Si(001)2 × 1. According to the proposed adsorption model ethylene bonds to Sn dimers via [2 + 2] cycloaddition by interacting with their π dimer bonds. In contrast, indium dimers do not contain π bonds, which renders the In terminated Si(001) surface inert for ethylene adsorption.

  8. Adsorption of ethylene on Sn and In terminated Si(001) surface studied by photoelectron spectroscopy and scanning tunneling microscopy

    Science.gov (United States)

    Zimmermann, Petr; Sobotík, Pavel; Kocán, Pavel; Ošt'ádal, Ivan; Vorokhta, Mykhailo; Acres, Robert George; Matolín, Vladimír

    2016-09-01

    Interaction of ethylene (C2H4) with Si(001)-Sn-2 × 2 and Si(001)-In-2 × 2 at room temperature has been studied using core level (C 1s) X-ray photoelectron spectroscopy with synchrotron radiation and scanning tunneling microscopy. Sn and In form similar dimer chains on Si(001)2 × 1, but exhibit different interaction with ethylene. While ethylene adsorbs on top of Sn dimers of the Si(001)-Sn-2 × 2 surface, the Si(001)-In-2 × 2 surface turned out to be inert. Furthermore, the reactivity of the Sn terminated surface is found to be considerably decreased in comparison with Si(001)2 × 1. According to the proposed adsorption model ethylene bonds to Sn dimers via [2 + 2] cycloaddition by interacting with their π dimer bonds. In contrast, indium dimers do not contain π bonds, which renders the In terminated Si(001) surface inert for ethylene adsorption.

  9. Enhanced extraction efficiency of fluorescent SiC by surface nanostructuring

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Yakimova, Rositza

    2012-01-01

    Antireflective structures were fabricated on fluorescent 6H-SiC for white LEDs to enhance the extraction efficiency. Average surface reflectance decreased from 22.1% to 5.1% over a broad range, and luminescence intensity was enhanced by 41%.......Antireflective structures were fabricated on fluorescent 6H-SiC for white LEDs to enhance the extraction efficiency. Average surface reflectance decreased from 22.1% to 5.1% over a broad range, and luminescence intensity was enhanced by 41%....

  10. Chemical, electronic, and magnetic structure of LaFeCoSi alloy: Surface and bulk properties

    Energy Technology Data Exchange (ETDEWEB)

    Lollobrigida, V. [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome (Italy); Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Basso, V.; Kuepferling, M.; Coïsson, M.; Olivetti, E. S.; Celegato, F. [Istituto Nazionale di Ricerca Metrologica (INRIM), I-10135 Torino (Italy); Borgatti, F. [CNR, Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), I-40129 Bologna (Italy); Torelli, P.; Panaccione, G. [CNR, Istituto Officina dei Materiali (IOM), Lab. TASC, I-34149 Trieste (Italy); Tortora, L. [Laboratorio di Analisi di Superficie, Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Dipartimento di Ingegneria Meccanica, Università Tor Vergata, I-00133 Rome (Italy); Stefani, G.; Offi, F. [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome (Italy)

    2014-05-28

    We investigate the chemical, electronic, and magnetic structure of the magnetocaloric LaFeCoSi compound with bulk and surface sensitive techniques. We put in evidence that the surface retains a soft ferromagnetic behavior at temperatures higher than the Curie temperature of the bulk due to the presence of Fe clusters at the surface only. This peculiar magnetic surface effect is attributed to the exchange interaction between the ferromagnetic Fe clusters located at the surface and the bulk magnetocaloric alloy, and it is used here to monitor the magnetic properties of the alloy itself.

  11. Effects of surface crystallization and oxidation in nanocrystalline FeNbCuSiB(P) ribbons

    Science.gov (United States)

    Butvinová, B.; Butvin, P.; Brzózka, K.; Kuzminski, M.; Maťko, I.; Švec, P., Sr.; Chromčíková, M.

    2017-02-01

    Si-poor Fe74Nb3Cu1Si8B14-xPx, (x=0, 3) nanocrystalline ribbon-form alloys often form surfaces, which exert in-plane force on underlying ribbon interior when nanocrystallized in even modest presence of oxygen. Mostly unwanted hard-ribbon-axis magnetic anisotropy is standard result. Essential sources of the surface-caused stress have been sought and influence of P instead of B substitution on this effect was studied too. Preferred surface crystallization (PSC) was found to be the major reason. However P substitution suppresses PSC and promotes Fe-oxide formation, which eases the stress, softens the surfaces and provides different annealing evolution of surface properties.

  12. Adsorption and migration behavior of Si atoms on the hydrogen-terminated diamond (001) surface: A first principles study

    Science.gov (United States)

    Liu, Xuejie; Qiao, Haimao; Kang, Congjie; Ren, Yuan; Tan, Xin; Sun, Shiyang

    2017-10-01

    The adsorption and migration activation energies of a silicon (Si) atom on a hydrogen-terminated diamond (001) surface were calculated using first principles methods based on density functional theory. On the fully hydrogen-terminated surface, the surface carbon atoms possess saturated bonds. The Si atom cannot bond with the surface carbon atoms; thus, the adsorption energy of the Si atom is low. However, on the hydrogen-terminated surface with one or two open radical sites (ORS), the adsorption energy of a Si atom increases to 3.1 eV and even up to 4.7 eV, thereby forming a stable configuration. Along the three ORS in the direction of dimer row or chain, a Si atom can migrate between two deep basins with migration activation energies at 1.5 or 1.3 eV. Given the relatively large energy barrier at approximately 3.8 or 4.7 eV, escaping from the deep basin is difficult for the Si atom. This investigation showed that the number and distribution of ORS, namely, the adsorption site of hydrogen atoms and the removal site of surface hydrogen atoms, can affect the adsorption and migration of Si atoms on the hydrogen-terminated diamond surface. Electron structure analysis further reveals that the reactivity of the surface C atoms and the charge transfer amount between the Si and surface C atoms affect the adsorption and migration of Si atoms.

  13. Surface engineering of gold nanoparticles for in vitro siRNA delivery

    Science.gov (United States)

    Zhao, Enyu; Zhao, Zhixia; Wang, Jiancheng; Yang, Chunhui; Chen, Chengjun; Gao, Lingyan; Feng, Qiang; Hou, Wenjie; Gao, Mingyuan; Zhang, Qiang

    2012-07-01

    Cellular uptake, endosomal/lysosomal escape, and the effective dissociation from the carrier are a series of hurdles for specific genes to be delivered both in vitro and in vivo. To construct siRNA delivery systems, poly(allylamine hydrochloride) (PAH) and siRNA were alternately assembled on the surface of 11.8 +/- 0.9 nm Au nanoparticles (GNP), stabilized by denatured bovine serum albumin, by the ionic layer-by-layer (LbL) self-assembly method. By manipulating the outmost PAH layer, GNP-PAH vectors with different surface electric potentials were prepared. Then, the surface potential-dependent cytotoxicity of the resultant GNP-PAH particles was evaluated via sulforhodamine B (SRB) assay, while the surface potential-dependent cellular uptake efficiency was quantitatively analyzed by using the flow cytometry method based on carboxyfluorescein (FAM)-labeled siRNA. It was revealed that the GNP-PAH particles with surface potential of +25 mV exhibited the optimal cellular uptake efficiency and cytotoxicity for human breast cancer MCF-7 cells. Following these results, two more positively charged polyelectrolytes with different protonating abilities in comparison with PAH, i.e., polyethylenimine (PEI), and poly(diallyl dimethyl ammonium chloride) (PDDA), were chosen to fabricate similarly structured vectors. Confocal fluorescence microscopy studies indicated that siRNA delivered by GNP-PAH and GNP-PEI systems was better released than that delivered by the GNP-PDDA system. Further flow cytometric assays based on immunofluorescence staining of the epidermal growth factor receptor (EGFR) revealed that EGFR siRNA delivered by GNP-PAH and GNP-PEI exhibited similar down-regulation effects on EGFR expression in MCF-7 cells. The following dual fluorescence flow cytometry assays by co-staining phosphatidylserine and DNA suggested the EGFR siRNA delivered by GNP-PAH exhibited an improved silencing effect in comparison with that delivered by the commercial transfection reagent

  14. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

    Science.gov (United States)

    Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

    2017-09-13

    Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CFx) film deposition and Ar plasma activation of the CFx film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CFx deposition half-cycle from a C4F8/Ar plasma show that an atomically thin mixing layer is formed between the deposited CFx layer and the underlying SiO2 film. Etching during the Ar plasma cycle is activated by Ar(+) bombardment of the CFx layer, which results in the simultaneous removal of surface CFx and the underlying SiO2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CFx deposition, which combined with an ultrathin CFx layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CFx film, ∼3-4 Å of SiO2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CFx layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CFx on reactor walls leads to a gradual increase in the etch per cycle.

  15. SiGe Based Low Temperature Electronics for Lunar Surface Applications

    Science.gov (United States)

    Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

    2012-01-01

    The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

  16. Adsorption of CO molecules on the Si(111)-(7×7) surface

    Science.gov (United States)

    Seo, Eonmi; Eom, Daejin; Hyun, Jung-Min; Kim, Hanchul; Koo, Ja-Yong

    2017-02-01

    Adsorption of CO molecules on Si(111)-(7×7) is investigated by using scanning tunneling microscopy (STM) and density-functional theory calculations. The most reactive site on the Si(111)-(7×7) surface is the corner adatom in the faulted half unit (FHU), followed by the center adatom in the FHU. The initial sticking probability of CO molecules on Si(111)-(7×7) at room temperature (RT) is estimated to be ∼ 4 ×1010 molecules/(cm2·Langmuir), which is comparable with that on Si(001)-(2×1). From the experiments and theoretical calculations, the adsorption of CO molecules are found to occur on Si adatoms either in the upright on-top configuration or in the back-bond inserted configuration, while the adsorption on the rest and the corner hole atoms (which are theoretically probable) are not observable using STM due to their low-lying geometries. Though the sticking probability is very low, every surface dangling bond on the surface can bind strongly with the C atom of a CO molecule even at temperatures higher than RT.

  17. Interaction of plasma-generated water cluster ions with chemically-modified Si surfaces investigated by infrared absorption spectroscopy

    Directory of Open Access Journals (Sweden)

    Ayumi Hirano-Iwata

    2016-03-01

    Full Text Available We have investigated the interaction of water cluster ions generated by discharge plasma, with chemically modified Si surfaces using infrared absorption spectroscopy in the multiple internal reflection geometry. We observe that water cluster ions readily adsorb on SiO2-covered Si surfaces to form water droplets. We demonstrate that positively- and negatively-charged cluster ions adsorb on the SiO2-covered Si surface in different manners, indicating ionic interaction of the water droplets with the negatively-charged SiO2 surface. Water droplets formed on the protein-coated surface rupture the amide bond of the proteins, suggesting the function of protein decomposition of water cluster ions.

  18. Interaction of plasma-generated water cluster ions with chemically-modified Si surfaces investigated by infrared absorption spectroscopy

    Science.gov (United States)

    Hirano-Iwata, Ayumi; Matsumura, Ryosuke; Ma, Teng; Kimura, Yasuo; Niwano, Michio; Nishikawa, Kazuo

    2016-03-01

    We have investigated the interaction of water cluster ions generated by discharge plasma, with chemically modified Si surfaces using infrared absorption spectroscopy in the multiple internal reflection geometry. We observe that water cluster ions readily adsorb on SiO2-covered Si surfaces to form water droplets. We demonstrate that positively- and negatively-charged cluster ions adsorb on the SiO2-covered Si surface in different manners, indicating ionic interaction of the water droplets with the negatively-charged SiO2 surface. Water droplets formed on the protein-coated surface rupture the amide bond of the proteins, suggesting the function of protein decomposition of water cluster ions.

  19. A conductive surface coating for Si-CNT radiation detectors

    Science.gov (United States)

    Valentini, Antonio; Valentini, Marco; Ditaranto, Nicoletta; Melisi, Domenico; Aramo, Carla; Ambrosio, Antonio; Casamassima, Giuseppe; Cilmo, Marco; Fiandrini, Emanuele; Grossi, Valentina; Guarino, Fausto; Angela Nitti, Maria; Passacantando, Maurizio; Santucci, Sandro; Ambrosio, Michelangelo

    2015-08-01

    Silicon-Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon.

  20. A conductive surface coating for Si-CNT radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Valentini, Antonio, E-mail: antonio.valentini@ba.infn.it [Dipartimento di Fisica, Università degli Studi di Bari, Via Orabona 4, 70125 Bari (Italy); Valentini, Marco [INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Ditaranto, Nicoletta [Dipartimento di Chimica, Università degli Studi di Bari, Via Amendola 173, 70126 Bari (Italy); Melisi, Domenico [INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Aramo, Carla, E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, Antonio [CNR-SPIN U.O.S. di Napoli and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Casamassima, Giuseppe [Dipartimento di Fisica, Università degli Studi di Bari, Via Orabona 4, 70125 Bari (Italy); INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Cilmo, Marco [INFN, Sezione di Napoli, and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Fiandrini, Emanuele [INFN, Sezione di Perugia, and Dipartimento di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia (Italy); Grossi, Valentina [INFN, Sezione di L’Aquila, and Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell’Aquila, Via Vetoio 10 Coppito, 67100 L’Aquila (Italy); and others

    2015-08-01

    Silicon–Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon. - Highlights: • ITO was deposited by Ion Beam Sputtering on MWCNT. • ITO on CNT makes an inter-diffusion layer of the order of one hundred nanometers. • Improvements of quantum efficiency of photon detectors based on CNT with ITO.

  1. Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces

    Science.gov (United States)

    Zhachuk, R.; Teys, S.; Coutinho, J.; Rayson, M. J.; Briddon, P. R.

    2014-10-01

    Triple steps on Si(111) surfaces are popular building blocks for bottom-up nanostructure assembly, conferring size uniformity and precise positioning of growing nanostructures. In this work, we employ the Si(7 7 10) regular stepped surface as model system to study the triple steps by scanning tunneling microscopy (STM) and large-scale first-principles calculations. We find a surprising cohabitation of reconstruction elements at the step edge that either buckles statically or dynamically at room temperature. The driving force for the observed sequence of buckling patterns is traced back to Coulomb interactions involving charged adatoms and rest-atoms lying on a mini-terrace. These results reconcile the Si(111) triple step model with the experimental STM data.

  2. Surface Oxidation of Al2O3/SiC Nanocomposite: Phase Transformation and Microstructure

    Institute of Scientific and Technical Information of China (English)

    Cai Shu; Peng Zhenzhen; Feng Jie; Lu Feng

    2005-01-01

    The surface oxidation behavior of pressureless sintered Al2O3/SiC nanocomposite was studied from 1000 to 1400 ℃ for more than 10 h in air. Weight gain during the process of heat treatment was measured by TG analysis. Phase transformation and microstructure changes of these specimens due to oxidation were investigated with X-ray diffraction (XRD), SEM and EDX technology. Thermogravimetric analysis show that the weight gain as a result of oxidation of SiC become significant above 1200 ℃. In the range of 1000~1300 ℃, the SiC grits are usually coated with a layer of amorphous silica after oxidation. Above 1300 ℃, the amorphous silica reacted with alumina matrix and formed mullite or crystallized into cristobalite. The rate of oxidation depends on the formation of dense cristobalite film. Large amount of needle-like mullite and alumina crystals are formed on the surface after oxidation at 1400 ℃.

  3. Ion-beam-induced nanodots formation from Au/Si thin films on quartz surface

    Energy Technology Data Exchange (ETDEWEB)

    Datta, D.P.; Siva, V.; Singh, A. [School of Physical Sciences, National Institute of Science Education and Research (NISER), Bhubaneswar, Jatni - 752050, Odisha (India); Joshi, S.R. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, Odisha (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sahoo, P.K., E-mail: pratap.sahoo@niser.ac.in [School of Physical Sciences, National Institute of Science Education and Research (NISER), Bhubaneswar, Jatni - 752050, Odisha (India)

    2016-07-15

    We report the synthesis of Si nanodots on quartz surface using ion irradiation. When a bi-layer of ultrathin Au and Si on quartz surface is irradiated by 500 keV Xe-ion beam, the bi-layer spontaneously transforms into nanodots at a fluence of 5 × 10{sup 14} ions cm{sup −2}. The spatial density and diameter of the nanodots are reduced with increase in applied ion fluence. The nanostructures exhibit photoluminescence in the visible range at room temperature where the intensity and wavelength depends upon ion fluence. The observed evolution seems to be correlated to ion beam mixing induced silicide formation at Au–Si interface.

  4. Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhachuk, R., E-mail: zhachuk@gmail.com; Teys, S. [Institute of Semiconductor Physics, pr. Lavrentyeva 13, Novosibirsk 630090 (Russian Federation); Coutinho, J. [Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal); Rayson, M. J. [Department of Chemistry, University of Surrey, Guildford GU2 7XH (United Kingdom); Briddon, P. R. [School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle Upon Tyne NE1 7RU (United Kingdom)

    2014-10-27

    Triple steps on Si(111) surfaces are popular building blocks for bottom-up nanostructure assembly, conferring size uniformity and precise positioning of growing nanostructures. In this work, we employ the Si(7 7 10) regular stepped surface as model system to study the triple steps by scanning tunneling microscopy (STM) and large-scale first-principles calculations. We find a surprising cohabitation of reconstruction elements at the step edge that either buckles statically or dynamically at room temperature. The driving force for the observed sequence of buckling patterns is traced back to Coulomb interactions involving charged adatoms and rest-atoms lying on a mini-terrace. These results reconcile the Si(111) triple step model with the experimental STM data.

  5. Assessment of factors influencing surface roughness on the machining of Al/SiC particulate composites

    Energy Technology Data Exchange (ETDEWEB)

    Palanikumar, K. [Department of Mechanical and Production Engineering, Sathyabama Institute of Science and Technology, Deemed University, Chennai 600 119, Tamilnadu (India)]. E-mail: palanikumar_k@yahoo.com; Karthikeyan, R. [Department of Manufacturing Engineering, Annamalai University, Chidambaram 608001 (India)

    2007-07-01

    The utilization of Al/SiC particulate composite materials in many different engineering fields has undergone a tremendous increase. Accordingly, the need for accurate machining of composites has increased enormously. In the present study, an attempt has been made to assess the factors influencing surface roughness on the machining of Al/SiC particulate composites. Experimental design concept has been used for experimentation. The machining experiments were conducted on lathe using tungsten carbide tool inserts (K10) with two levels of factors. The factors considered were: % volume fraction of SiC, cutting speed, depth of cut and feed rate. A procedure has been developed to assess and optimize the chosen factors to attain minimum surface roughness by incorporating: (i) response table and response graph, (ii) normal probability plot (iii) interaction graphs and (iv) analysis of variance (ANOVA) technique.

  6. A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100)

    Science.gov (United States)

    Burgess, S. R.; Cowie, B. C. C.; Wilks, S. P.; Dunstan, P. R.; Dunscombe, C. J.; Williams, R. H.

    1996-09-01

    The adsorption of tellurium on Si(100) has been studied using surface extended X-ray adsorption fine structure (SEXAFS) and X-ray standing wave spectroscopy (XSW). This particular system is of interest due to its potential applicability in the surfactant aided growth of CdHgTeCdTeSi(100) based infra-red detectors. The Te/Si(100) structure was generated by depositing a thick layer (˜ 100 Å) of CdTe onto a clean Si (2 × 1) double domain surface, and annealing the sample to 350°C. This resulted is a ˜ 1 ML Te terminated surface where the (2 × 1) reconstruction was lost in favour of a (1 × 1) symmetry. X-ray absorption of the Te L 3 edge ( E = 4341 eV), with a photon energy range of 4440-4700 eV, was probed using a total yield detection scheme. The SEXAFS results indicated that the Te atoms sat in 2-fold bridge sites directly above a fourth layer Si atom. The corresponding bond length was measured to be 2.52 ± 0.05 Å. The XSW measurements of the (400) reflection gave a coherent position of 1.63 ± 0.03 Å and a coherent fraction of 0.65. This is consistent with the breaking of the SiSi dimers and thus could be an example of the phenomena of adsorbate-induced dereconstruction of the surface. These results are compared with those of Bennet et al. who examined a similar system using soft X-ray photoemission (SXPS) and the STM study of Yoshikawa et al.

  7. Surface Coating Constraint Induced Anisotropic Swelling of Silicon in Si-Void@SiO x Nanowire Anode for Lithium-Ion Batteries.

    Science.gov (United States)

    Liu, Qian; Cui, Zhe; Zou, Rujia; Zhang, Jianhua; Xu, Kaibing; Hu, Junqing

    2017-04-01

    Here a simple and an environmentally friendly approach is developed for the fabrication of Si-void@SiOx nanowires of a high-capacity Li-ion anode material. The outer surface of the robust SiOx backbone and the inside void structure in Si-void@SiOx nanowires appropriately suppress the volume expansion and lead to anisotropic swelling morphologies of Si nanowires during lithiation/delithiation, which is first demonstrated by the in situ lithiation process. Remarkably, the Si-void@SiOx nanowire electrode exhibits excellent overall lithium-storage performance, including high specific capacity, high rate property, and excellent cycling stability. A reversible capacity of 1981 mAh g(-1) is obtained in the fourth cycle, and the capacity is maintained at 2197 mAh g(-1) after 200 cycles at a current density of 0.5 C. The outstanding overall properties of the Si-void@SiOx nanowire composite make it a promising anode material of lithium-ion batteries for the power-intensive energy storage applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Direct methods determination of the Si(111)-(6x6)Au surface structure

    DEFF Research Database (Denmark)

    Grozea, D.; Landree, E.; Marks, L.D.;

    1998-01-01

    The atomic structure of the Au 6 x 6 on Si(111) phase has been determined using direct methods and surface X-ray diffraction data. This surface structure is very complicated, with 14 independent gold atoms, relaxations in 24 independent silicon sites and three partially occupied gold sites. In on...... the gold structures in the coverage range 0.8-1.5 monolayers as pseudo-glasses with strong short-range order but varying degrees of long-range order. (C) 1998 Elsevier Science B.V. All rights reserved.......The atomic structure of the Au 6 x 6 on Si(111) phase has been determined using direct methods and surface X-ray diffraction data. This surface structure is very complicated, with 14 independent gold atoms, relaxations in 24 independent silicon sites and three partially occupied gold sites. In one...

  9. Spontaneous dissociation of a conjugated molecule on the Si(100) surface

    DEFF Research Database (Denmark)

    Lin, Rong; Galili, Michael; Quaade, Ulrich

    2002-01-01

    The adsorption mechanism of alpha-sexithiophene (alpha-6T) on the clean Si(100)-(2x1) surface has been investigated using scanning tunneling microscopy (STM) and first principles electronic structure calculations. We find that at submonolayer coverage, the alpha-6T molecules are not stable...... and dissociate into monomers. We observe two different configurations of the monomers and have discussed the corresponding adsorption geometries based on theoretical calculations. The calculations elucidate how the fragments are absorbed on the surface, giving rise to the observed STM images. With increasing...... coverage, the STM images show the existence of complete alpha-6T molecules. In addition, results of the adsorption behavior of alpha-6T molecules on the H-passivated Si(100)-(2x1) surface are reported. On this surface the molecules are highly mobile at room temperature due to the weak molecule...

  10. Investigation of the 6H-SiC (0001) surface by AFM

    Institute of Scientific and Technical Information of China (English)

    Shouzhen Jiang; Guangwei Yu; Yingmin Wang; Xiaobo Hu; Xiangang Xu; Minhua Jiang

    2008-01-01

    Micropipe and step structures on 6H-SiC (0001) surface were investigated by an atomic force microscopy (AFM). On the facet, all micropipes examined are the origins of spiral steps, indicating that dislocations intersect the surface at these points. Micro-pipes are empty-core super-dislocations as originally described by Frank. The micropipe radius increases with the square of the dis-location Burgers vector. From the center to the periphery, step structures change with different surface inehnations. Regular step is observed within the central faceted area. Step bunching and atomically rough surfaces are observed within the peripheral convex area.If the inclination with respect to the (0001) plane is large enough, step bunching of 15R-SiC can be observed.

  11. Optical characterization of gold chains and steps on the vicinal Si(557) surface: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hogan, Conor [Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, via Fosso del Cavaliere 100, 00133 Rome (Italy); Department of Physics and European Theoretical Spectroscopy Facility (ETSF), University of Rome ' ' Tor Vergata' ' , Via della Ricerca Scientifica 1, 00133 Rome (Italy); McAlinden, Niall; McGilp, John F. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)

    2012-06-15

    We present a joint experimental-theoretical study of the reflectance anisotropy of clean and gold-covered Si(557), a vicinal surface of Si(111) upon which gold forms quasi-one-dimensional (1D) chains parallel to the steps. By means of first-principles calculations, we analyse the close relationship between the various surface structural motifs and the optical properties. Good agreement is found between experimental and computed spectra of single-step models of both clean and Au-adsorbed surfaces. Spectral fingerprints of monoatomic gold chains and silicon step edges are identified. The role of spin-orbit coupling (SOC) on the surface optical properties is examined, and found to have little effect. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. SURFACE CONDUCTIVITY OF SI(111) 7 X 7 WITH SUBMONOLAYER PB-COVERAGES

    NARCIS (Netherlands)

    SUURMEIJER, EPTM; BENEDICTUS, R; VANDERSTADT, A; KLAPWIJK, TM

    1993-01-01

    The conductivity of Si(111)7 x 7 surfaces is studied in situ during room temperature deposition of submonolayers Pb. The conductance shows an initial decrease to a shallow minimum for coverages between 0.05 and 0.1 monolayer (ML) and a subsequent steep increase between 0.4 and 0.7 ML. Both continuou

  13. Molecular Dynamics Simulations of Atomic H Etching SiC Surface

    NARCIS (Netherlands)

    Sun, W.; Liu, H.; Lin, L.; Zhao, C. L.; Lu, X. D.; He, P. N.; Gou, F.

    2012-01-01

    In this paper, molecular dynamics simulations were performed to study interactions between atomic H and SiC, silicon carbon surfaces were continuously bombarded by atomic H with different energies. The Tersoff-Brenner potentials were implemented. The simulation results show that with increasing

  14. Growth behavior and properties of nano Pb quantum islands on Si(111) surfaces at low temperatures

    Science.gov (United States)

    Tsong, Tien T.

    2004-03-01

    Quantum effects can affect the dynamic properties of surface atoms and the growth behavior of nanometer size islands. Using scanning tunneling microscopy (STM), we have studied: 1) Dynamics of atoms and silicon magic clusters on clean Si(111)-7x7 surfaces. 2) How the electronic property affects the growth behavior of Pb ultra-thin quantum-islands on the Si(111) surface. We find the low temperature growth of Pb quantum-islands on the Si(111)-7x7 surface is affected by the electronic standing wave states formed in the normal direction of these islands. The scaling behavior in the growth of these multilayer flat-top quantum islands can be described by a scaling theory of growth of single layer 2D islands with a minor modification. 3) Observed the vertical Friedel oscillation of the electronic Morie patterns formed at the Pb-Si interface and found the decay of the amplitude to follow the inverse square of the distance to the interface. 4) Observed the dynamics of a structure phase transition of monolayer quasi two dimensional Pb islands and its size effect. These and other recent interesting observations of ours will be presented. Coworkers: C-S Chang, I-S Hwang, W-B Su, M-S Ho, W-B Jian, and S-H Chang etc. Work supported by NSC of Taiwan and Academia Sinica (Taiwan).

  15. Laser surface alloying of aluminum (AA1200) with Ni and SiC Powders

    CSIR Research Space (South Africa)

    Mabhali, Luyolo AB

    2010-12-01

    Full Text Available An Nd:YAG laser was used for surface alloying of aluminum AA1200. The alloying powder was a mixture of Ni and SiC in different ratios. A study of the microstructures obtained after alloying was conducted using optical and scanning electron...

  16. A novel growth mode of alkane films on a SiO2 surface

    DEFF Research Database (Denmark)

    Mo, H.; Taub, H.; Volkmann, U.G.;

    2003-01-01

    Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on th...... previously for shorter alkanes deposited from the vapor phase onto solid surfaces....

  17. Decreased bacteria activity on Si3N4 surfaces compared with PEEK or titanium

    Directory of Open Access Journals (Sweden)

    Puckett S

    2012-09-01

    Full Text Available Deborah Gorth,1 Sabrina Puckett,1 Batur Ercan,1 Thomas J Webster,1 Mohamed Rahaman,2 B Sonny Bal31School of Engineering and Department of Orthopaedics, Brown University, Providence, RI, 2Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO, 3Department of Orthopaedic Surgery, School of Medicine, University of Missouri, Columbia, MO, USAAbstract: A significant need exists for orthopedic implants that can intrinsically resist bacterial colonization. In this study, three biomaterials that are used in spinal implants – titanium (Ti, poly-ether-ether-ketone (PEEK, and silicon nitride (Si3N4 – were tested to understand their respective susceptibility to bacterial infection with Staphylococcus epidermidis, Staphlococcus aureus, Pseudomonas aeruginosa, Escherichia coli and Enterococcus. Specifically, the surface chemistry, wettability, and nanostructured topography of respective biomaterials, and the effects on bacterial biofilm formation, colonization, and growth were investigated. Ti and PEEK were received with as-machined surfaces; both materials are hydrophobic, with net negative surface charges. Two surface finishes of Si3N4 were examined: as-fired and polished. In contrast to Ti and PEEK, the surface of Si3N4 is hydrophilic, with a net positive charge. A decreased biofilm formation was found, as well as fewer live bacteria on both the as-fired and polished Si3N4. These differences may reflect differential surface chemistry and surface nanostructure properties between the biomaterials tested. Because protein adsorption on material surfaces affects bacterial adhesion, the adsorption of fibronectin, vitronectin, and laminin on Ti, PEEK, and Si3N4 were also examined. Significantly greater amounts of these proteins adhered to Si3N4 than to Ti or PEEK. The findings of this study suggest that surface properties of biomaterials lead to differential adsorption of physiologic proteins, and that this

  18. The Stellar Imager (SI) - A Mission to Resolve Stellar Surfaces, Interiors, and Magnetic Activity

    Science.gov (United States)

    Christensen-Dalsgaard, Jorgen; Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2012-01-01

    The Stellar Imager (SI) is a space-based, UV/Optical Interferometer (UVOI) designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI will enable the development and testing of a predictive dynamo model for the Sun, by observing patterns of surface activity and imaging of the structure and differential rotation of stellar interiors in a population study of Sun-like stars to determine the dependence of dynamo action on mass, internal structure and flows, and time. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled processes in the Universe. SI is a "LandmarklDiscovery Mission" in the 2005 Heliophysics Roadmap, an implementation of the UVOI in the 2006 Astrophysics Strategic Plan, and a NASA Vision Mission ("NASA Space Science Vision Missions" (2008), ed. M. Allen). We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this mission

  19. AN IN SITU SURFACE COMPOSITE AND GRADIENT MATERIALOF Al-Si ALLOY PRODUCED BY ELECTROMAGNETIC FORCE

    Institute of Scientific and Technical Information of China (English)

    Z.M. Xu; T.X. Li; Z.L. Zhu; Y.H. Zhou

    2001-01-01

    Because of the different conductivities between the primary phase (law electric conductivity) and the metal melt, electromagnetic force scarcely acts on the primary phase.Thus, an electromagnetic repulsive force applied by the metal melt exerts on the primary phase when the movement of the melt in the direction of electromagnetic force is limited. As a result, the repulsive force exerts on the primary phase to push them to move in the direction opposite to that of the electromagnetic force when the metal melt with primary phase solidifies under an electromagnetic force field. Based on this,a new method for production of in situ surface composite and gradient material by electromagnetic force is proposed. An in situ primary Si reinforced surface composite of Al-15wt%Si alloy and gradient material of Al-19wt%Si alloy were produced by this method. The microhardness of the primary Si is HV1320. The reinforced phase size is in the range from 40μm to 100μm. The wear resistance of Al-Si alloy gradient material can be more greatly increased than that of their matrix material.``

  20. Surface plasmon effect of Ag nanodots embedded in amorphous Si window layers deposited on Si solar cells.

    Science.gov (United States)

    Park, Seungil; Ji, HyungYong; Kim, Myeong Jun; Peck, Jong Hyeon; Kim, Keunjoo

    2014-12-01

    We investigated solar cells containing temperature-dependent Ag nanodots embedded in an amorphous Si thin film layer by using hot-wire chemical vapor deposition in order to improve the properties of crystalline Si solar cells. An Ag thin film with a thickness of 10 nm was deposited by DC sputtering followed by annealing at various temperatures ranging from 250 to 850 degrees C for 15 min under N2 gas. As increasing the annealing temperature, the Ag nanodots were enlarged and the photoreflectances of the samples with Ag nanodots were lower than the reference samples in the spectral range of 200-600 nm, demonstrating the plasmon effect of Ag nanodots. The cell properties on photoluminescence spectra, quantum efficiency, and conversion efficiency were measured with the maximum values for the sample annealed at 450 degrees C, indicating that there exists an optimal size of the Ag nanodots about 15-35 nm to be effective on the enhancement of surface plasmon effect.

  1. Oxidation of dimers at the Si(100) surface studied by first-principles simulation of high-resolution EELS

    Energy Technology Data Exchange (ETDEWEB)

    Caramella, Lucia; Onida, Giovanni [Dipartimento di Fisica dell' Universita' degli Studi di Milano (Italy); European Theoretical Spectroscopy Facility (ETSF), Milano (Italy); Hogan, Conor; Del Sole, Rodolfo [Dipartimento di Fisica, Universita di Roma ' ' Tor Vergata' ' , Roma (Italy); ETSF and CNR-INFM-SMC, Roma (Italy)

    2010-08-15

    Electron energy loss spectra of the Si(100) and Si(100):O surfaces are investigated using ab initio methods based on density functional theory. Computed spectra for the clean surface are found to be in good agreement with published experimental data, providing further confirmation that reconstructions of higher order than (2 x 1) are present on Si(100). The origins of the main spectral structures are analyzed and their relation to the surface bandstructure is illustrated. Oxygen adsorption on the surface dimers is found to cause strong modifications to the calculated spectra, thereby partially explaining the results of surface differential reflectivity experiments. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. Surface finish effects and the strength-grain size relation in SiC

    Science.gov (United States)

    Cranmer, D. C.; Tressler, R. E.; Bradt, R. C.

    1977-01-01

    The effect of surface finish on the strength-grain size relation was investigated for dense hot-pressed SiC. Failure initiated predominantly via the propagation of extrinsic machining-induced flaws for the range of grain sizes and machining grit sizes studied. These results are consistent with the region of large-grain-size flaw control as delineated by Prochazka and Charles. The severity of machining-induced flaws, relative to the machining grit size, decreased with increasing machining grit size and decreasing SiC grain size.

  3. Temperature-Dependent Surface States and Transitions of Si(111)-7x7.

    Science.gov (United States)

    1984-09-01

    TRANSTONS OF Si(Il1)-7x7 by J. E. Demuth, B. N. J. Persson and A. J. Scheil-Sorokin Prepared for Publication in Physical Review Letters IBM T. J. Watson...NUMBER 24 PHYSICAL REVIEW LETTERS 12 DEiEMiER 1983 Temperature-Dependent Surface States and Transitions of Si(11l)-7x7 J. E. Demuth, B. N. J. Persson...8217 ’ " " " .. . .; " ’ " ’ " " " " "h " - -’ ; - ’ . . ": - - VOLUME 51, NUMBER 24 PHYSICAL REVIEW LETTERS 12

  4. Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen

    CERN Document Server

    Takahashi, R; Ikeda, H; Sakashita, M; Sakai, A; Yasuda, Y; Nakatsuka, O; Zaima, S

    2003-01-01

    We have investigated the initial nitridation processes on oxidized Si(100) with radical nitrogen at a substrate temperature of 850degC using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). It is found that the thin oxide layer suppresses the changes of original Si step structures during nitridation, and this effect critically depends on the growth conditions of the oxide layer. Comparison of the nitride island morphology to the case of the clean surface suggests that the migration of the precursor during nitridation is suppressed by the oxygen in the layer. (author)

  5. Ab initio study of the epitaxial growth of Ge on Si(100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Milman, V.; Pennycook, S.J.; Jesson, D.E. [Oak Ridge National Lab., TN (United States); Payne, M.C.; Stich, I. [Cambridge Univ. (United Kingdom). Dept. of Physics

    1993-11-01

    We identify the binding sites for adsorption of a single Ge atom on the Si(100) surface using ab initio total energy calculations. The calculated diffusion barriers are in excellent agreement with experimental estimates. Using a large supercell we resolve the controversy regarding the binding geometry and migration path for the adatom, and investigate the influence of the adatom on the buckling of Si dimers. The adatom induces a buckling defect that is frequently observed using scanning tunneling microscopy (STM); therefore the study of single adatoms may be experimentally accessible.

  6. Growing extremely thin bulklike metal film on a semiconductor surface: Monolayer Al(111) on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Ying; Kim, Yong-Hyun; Zhang, S. B.; Ebert, Philipp; Yang, Shenyuan; Tang, Zhe; Wu, Kehui; Wang, E. G.

    2007-10-29

    We report combined scanning tunneling microscopy, x-ray photoelectron emission spectroscopy, electron energy loss spectroscopy, and theoretical study of the growth of ultrathin Al film on the Si(111) substrate. We show that by (i) a modification of the substrate reconstruction with a √3×√3 surface and (ii) a choice of materials with commensurate lattices, atomically flat film can be obtained even at the ultimate one monolayer limit, while maintaining a bulklike atomic structure. Detailed analysis shows that this monolayer Al(111)-1×1Al(111)-1×1 film is electronically decoupled from the Si substrate, and it shows metallic characteristics.

  7. Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

    Energy Technology Data Exchange (ETDEWEB)

    Roccaforte, F.; La Via, F.; Raineri, V. [Sezione di Catania, CNR-IMM, Stradale Primosole 50, 95121, Catania (Italy); Musumeci, P.; Calcagno, L. [INFM and Dipartimento di Fisica e Astronomia, via Santa Sofia 64, 95125, Catania (Italy); Condorelli, G.G. [Dipartimento di Chimica, viale A. Doria 6, 95125, Catania (Italy)

    2003-11-01

    In this work, the effects of surface preparation and thermal annealing on the Ni/6H-SiC Schottky barrier height were studied by monitoring the forward I-V characteristics of Schottky diodes. The ideality factor n and the barrier height {phi}{sub B} were found to be strongly dependent on the impurity species present at the metal/SiC interface. The physical mechanism which rules the Schottky barrier formation is discussed by considering the nature of the impurities left from the different surface preparation methods prior to metal deposition. In contrast, nickel silicide/SiC rectifiers (Ni{sub 2}Si/6H-SiC), formed by thermal reaction of Ni/6H-SiC above 600 C, have an almost ideal I-V curve, independent of the surface preparation. Further improvement in the barrier height distribution can be obtained by increasing the annealing temperature to 950 C. This behaviour is discussed in terms of the silicide phases and the consumption of a SiC layer during the thermal reaction. (orig.)

  8. Surface tension and specific heat of liquid Ni70.2Si29.8 alloy

    Institute of Scientific and Technical Information of China (English)

    WANG Haipeng; WEI Bingbo

    2005-01-01

    The surface tension and specific heat of stable and metastable liquid Ni70.2Si29.8 eutectic alloy were measured by electromagnetic levitation oscillating drop method and drop calorimetry. The surface tension depends on temperature linearly within the experimental undercooling regime of 0-182 K (0.12 TE). Its value is 1.693 N·m-1 at the eutectic temperature of 1488 K, and the temperature coefficient is -4.23×10-4 N·m-1·K-1. For the specific heat measurement, the maximum undercooling is up to 253 K (0.17 TE). The specific heat is determined as a polynomial function of temperature in the experimental temperature regime. On the basis of the measured data of surface tension and specific heat, the temperature-dependent density, excess volume and sound speed of liquid Ni70.2Si29.8 alloy are predicted theoretically.

  9. EFFECT OF PROCESS PARAMETERS ON SURFACE ROUGHNESS IN END MILLING OF Al/SiCp MMC

    Directory of Open Access Journals (Sweden)

    K. PALANIRADJA

    2011-01-01

    Full Text Available Metal matrix composites (MMCs have emerged as an important class of materials, which are increasingly being utilized in recent years. These materials are known as the difficult-to-machine materials because of the hardness and abrasive nature of reinforcements. The present work investigate the effect of spindle speed, feed rate, depthof cut and different % wt. of SiCp on surface roughness in end milling of LM25Al/SiCp. Experiments have been conducted on a CNC milling machine according to the principles of Response surface methodology design of experiments (DoE method. Central composite design (CCD was employed in developing an efficient mathematical model for surface roughness. Analysis of variance (ANOVA was used to test the adequacy of the developed mathematical model. The contour plots were generated to study the effect of process parameters aswell as their interactions.

  10. Theoretical investigation of the atomic and electronic structure of amino acids on Si(100) surfaces

    Science.gov (United States)

    Luo, Xuan; Qian, Gefei; Sagui, Celeste; Roland, Christopher

    2006-03-01

    There are currently considerable efforts underway to combine silicon-based device technology with myriad of organic molecules, thereby fabricating new structures that take advantage of the tunable electronic and optical properties of organic molecules. A key aspect of this integration process is binding of the organics to the silicon surfaces. As part of this effort, we have been investigating the binding of several amino acids -- the building blocks for proteins -- on the Si (100) surface with state-of-the art density functional theory methods. Specifically, the binding between the buckled Si(100) and the NH2, CH2, COOH, C=0 and NC entities at various surface sites have been investigated. We report and discuss on the resulting structures and their electronic properties.

  11. Preparation and performance of Si coating on RB-SiC mirror for surface modification%RB-SiC表面改性Si涂层的制备与性能

    Institute of Scientific and Technical Information of China (English)

    苑永涛; 刘红; 邵传兵; 陈益超; 方敬忠

    2011-01-01

    In order to manufacture reaction bonded silicon carbide(RB-SiC) mirrors of fine optical surface, 100 μm thick Si coatings were prepared by RF magnetron sputtering on RB-SiC substrates of 70 mm diameter and then polished. Tests with ZYGO surface profilometer show that the RMS surface roughness of the surface-modified RB-SiC achieves 0. 496 nm. X-ray diffraction analyses reveal the polycrystalline structure of the Si coatings. Moreover, the adhesion between Si coating and RB-SiC substrate measured by direct pull-off method is more than 10. 7 MPa. Therefore, the magnetron sputtered Si coating can satisfy the requirements of RB-SiC surface modification.%为了获得高质量光学表面的碳化硅反射镜,利用射频磁控溅射方法,在直径70 mm的RB-SiC基片上沉积了厚约100 μm的Si改性涂层,对改性层进行超光滑加工,并对改性层的表面形貌及性能进行了测试.ZYGO表面粗糙度仪测试结果表明,抛光后Si改性涂层表面粗糙度均方根值达到了0.496 nm;X射线衍射仪测试显示,制备Si改性涂层为多晶结构;使用拉力机做附着力测试,结果表明膜基附着力大于10.7 MPa.证明采用磁控溅射技术制备的Si改性涂层均匀、致密、附着力好,能够满足RB-SiC材料表面改性要求.

  12. SiO mass spectrometry and Si-2p photoemission spectroscopy for the study of oxidation reaction dynamics of Si(001) surface by supersonic O sub 2 molecular beams under 1000K

    CERN Document Server

    Teraoka, Y; Moritani, K

    2003-01-01

    The Si sup 1 sup 8 O desorption yield was measured in the Si(001) surface temperature region from 900K to 1300K at the sup 1 sup 8 O sub 2 incident energies of 0.7eV, 2.2eV and 3.3eV. The Si sup 1 sup 8 O desorption yield in a surface temperature region higher than 1000K increased with increasing incident energy, indicating the incident-energy-induced oxidation and the variation of angular distribution of Si sup 1 sup 8 O desorption. Inversely, the Si sup 1 sup 8 O desorption yield decreased with increasing incident energy in the region from 900K to 1000K, indicating the coexistence of the passive and the active oxidation. In order to clarify the reaction mechanisms of the later phenomenon, real-time in-situ Si-2p photoemission spectroscopy has been performed. The obtained Si-2p spectra showed the variation of the oxide-nuclei quality from the sub-oxide-rich structure to the SiO sub 2 -rich structure. The formation of the SiO sub 2 structure suppresses the SiO desorption due to the enhanced O sub 2 sticking a...

  13. Effect of surface tension on SiO2 -methanol nanofluids

    Science.gov (United States)

    Bhuiyan, M. H. U.; Saidur, R.; Amalina, M. A.; Mostafizur, R. M.

    2015-09-01

    Surface tension, the cohesive energy of an interface dominated the transportation behaviour of the liquids play an important role in the heat transfer performance. A new class of heat transfer fluid denoting “Nanofluids” with impressive thermo-physical properties, proved its promising potentiality in the heat transfer performance. However, very few numbers of studies observed for the effect of nanoparticles on the surface tension of liquids, also noted controversial results. In the present study, SiO2 nanoparticles dispersed in methanol solution to investigate the effect of surface tension with the change of concentration and their sizes. The most common Du-Nouy ring method was used to measure the surface tension of methanol based nanofluids by an automatic surface tensiometer.The results denote that the surface tension of the nanofluids increases with increase in concentration. On the other hand, the results indicate that the surface tension decreases with the increase in temperatures. Besides, the surface tension of SiO2-methanol nanofluids enhances compared to pure methanol. All in all, the enhancement observed 1.7% to 8.9% of the variation of volume fractions (0.05 Vol % to 0.25 Vol %) and the temperature change of 25 °C to 50 °C.

  14. White light emission from fluorescent SiC with porous surface

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

    2017-01-01

    , the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from......We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3...... for the development of high performance and rare-earth element free white light emitting materials....

  15. Formation and local electronic structure of Ge clusters on Si(111)-7×7 surfaces

    Institute of Scientific and Technical Information of China (English)

    Ma Hai-Feng; Xu Ming-Chun; Yang Bing; Shi Dong-Xia; Guo Hai-Ming; Pang Shi-Jin; Gao Hong-Jun

    2007-01-01

    We report the formation and local electronic structure of Ge clusters on the Si(111)-7×7 surface studied by using variable temperature scanning tunnelling microscopy (VT-STM) and low-temperature scanning tunnelling spectroscopy (STS). Atom-resolved STM images reveal that the Ge atoms are prone to forming clusters with 1.0 nm in diameter for coverage up to 0.12 ML. Such Ge clusters preferentially nucleate at the centre of the faulted-half unit cells, leading to the 'dark sites' of Si centre adatoms from the surrounding three unfaulted-half unit cells in filled-state images. Biasdependent STM images show the charge transfer from the neighbouring Si adatoms to Ge clusters. Low-temperature STS of the Ge clusters reveals that there is a band gap on the Ge cluster and the large voltage threshold is about 0.9 V.

  16. Laser surface heat treatment of electroless Ni-P-SiC coating on Al356 alloy

    Science.gov (United States)

    Hashemi, Sayed Hamid; Shoja-Razavi, Reza

    2016-11-01

    Electroless Ni-P-SiC coatings are recognized for their hardness and wear resistance. In the present study, electroless Ni-P coatings containing SiC particles were co-deposited on Al356 substrate. Laser surface heat treatment was performed using 700 W Nd:YAG pulsed laser. Effects of different laser operating parameters, such as laser scan rate, laser average power and defocusing distance on microstructures were investigated by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). The results of microstructural characterization indicated that the laser treatment under different operating conditions produced composite coating contained nanocrystallined Ni-based matrix with SiC particles Ni3P, Ni12P5, Ni5P2, Ni8P3 precipitates. The microhardness measurements showed that the hardness of the coating was increased up to 60%, due to laser heat treatment, without effect on base metal.

  17. P type porous silicon resistivity and carrier transport

    Energy Technology Data Exchange (ETDEWEB)

    Ménard, S., E-mail: samuel.menard@st.com [STMicroelectronics, 10, rue Thalès de Milet, 37071 Tours Cedex 2 (France); Fèvre, A. [STMicroelectronics, 10, rue Thalès de Milet, 37071 Tours Cedex 2 (France); Université François Rabelais de Tours, CNRS, CEA, INSA CVL, GREMAN UMR 7347, Tours (France); Billoué, J.; Gautier, G. [Université François Rabelais de Tours, CNRS, CEA, INSA CVL, GREMAN UMR 7347, Tours (France)

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  18. Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

    Science.gov (United States)

    Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

    2017-02-01

    Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

  19. UV irradiation induced switching of surface charge polarity on pyrene modified Si nanowires

    Science.gov (United States)

    Zhao, Wen-Chao; Wang, Hui; Ou, Xue-Mei; Lee, Chun-Sing; Zhang, Xiao-Hong

    2011-06-01

    It has been widely recognized that surface charge in nanomaterials can significantly affect their electrical properties. In this letter, we demonstrate that polarity of surface charge on pyrene modified silicon nanowires (SiNWs) can be switched by illumination of UV light. Unlike the reported conversion method via changing the surrounding pH value, switching process reported here takes place in real-time and does not require introduction of any other chemical species. Mechanisms of the surface charge polarity switching and potential applications of such systems were discussed.

  20. Disentangling surface, bulk, and space-charge-layer conductivity in Si(111)-(7x7)

    DEFF Research Database (Denmark)

    Wells, J.W.; Kallehauge, J.F.; Hansen, Torben Mikael;

    2006-01-01

    A novel approach for extracting genuine surface conductivities is presented and illustrated using the unresolved example of Si(111)-(7x7). Its temperature-dependent conductivity was measured with a microscopic four point probe between room temperature and 100 K. At room temperature the measured......), irrespective of bulk doping. This abrupt transition is interpreted as the switching from bulk to surface conduction, an interpretation which is supported by a numerical model for the measured four point probe conductance. The value of the surface conductance is considerably lower than that of a good metal....

  1. Infrared studies of gold nanochains on the Si(557) stepped surface

    Energy Technology Data Exchange (ETDEWEB)

    Vu Hoang, Chung; Klevenz, Markus; Lovrincic, Robert; Skibbe, Olaf; Neubrech, Frank; Pucci, Annemarie [Kirchhoff-Institut fuer Physik der Universitaet Heidelberg (Germany)

    2008-07-01

    Gold nanochains on Si(557) will be fabricated under ultra high vacuum conditions. The terraces of the stepped surface serve as one-dimensional diffusion channels, which leads to the formation of parallel monoatomic chains. Due to the appearance of metallic chains an anisotropic change of the conductivity of the substrate surface can be expected. The chain growth process and conductivity dependence versus gold composition will be investigated in-situ by using transmittance infrared spectroscopy (IRS) with light polarized parallel and perpendicular to the chains, respectively. IRS is a well-established method to observe conductivity changes on surfaces. The temperature dependent behaviour of gold chains will be studied as well.

  2. Effects of Weak Surface Modification on Co/SiO2 Catalyst for Fischer-Tropsch Reaction.

    Directory of Open Access Journals (Sweden)

    Wensheng Ning

    Full Text Available A weak surface modification is applied to Co/SiO2 catalyst by hydrothermal treatment at 180°C for 5 h. Aluminum is introduced to Co/SiO2 catalysts during the surface modification. The effects of surface modification on Co/SiO2 catalyst are studied by changing the operating sequences of surface modification and cobalt impregnation in the catalyst preparation. Surface modification before cobalt impregnation makes Co3O4 particle small and dispersed into the deep part of enlarged pore in SiO2, while surface modification after cobalt impregnation does not obviously change the particle size of Co3O4. The improved amplitude of catalytic activity is similar for the two kinds of catalysts, but they are benefited from different factors. The content of iso-hydrocarbons in the products is increased by the surface modifications.

  3. Laccase biosensor based on phytic acid modification of nanostructured SiO₂ surface for sensitive detection of dopamine.

    Science.gov (United States)

    Zhao, Wenbo; Wang, Kuai; Wei, Yuan; Ma, Yinghui; Liu, Lingling; Huang, Xiaohua

    2014-09-23

    In this work, three kinds of nanostructured silica-phytic acid (SiO2-PA) materials with diverse morphologies including spherical SiO2-PA (s-SiO2-PA), rod-like (r-SiO2-PA), and helical SiO2-PA (h-SiO2-PA) were prepared with the help of electrostatic interaction. The SiO2-PA nanomaterials with different morphologies were characterized by using transmission electron microscopy (TEM), Fourier transform infrared (FTIR), electrochemical impedance spectroscopy (EIS), and circular dichroism spectrum (CD). Diverse morphologies of SiO2-PA were used as electrode decorated materials to achieve a high efficiency for electrochemical dopamine (DA) detection. The laccase biosensors were fabricated by immobilizing different morphologies of SiO2-PA nanomaterials and laccase onto the glassy carbon electrode (GCE) surface, successively. Then the electrochemical responses of the different morphologies of nanostructured SiO2-PA nanomaterials to laccase were discussed. Results indicated that compared to laccase/s-SiO2-PA and laccase/r-SiO2-PA, the laccase/h-SiO2-PA-modified electrode showed the best electrochemical performances.

  4. Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Mogoda, A.S., E-mail: awad_mogoda@hotmail.com [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt); Ahmad, Y.H.; Badawy, W.A. [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt)

    2011-04-15

    Research highlights: {yields} Stain etching of p-Si in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4} was investigated. {yields} The electrical conductivity of the etched Si surfaces was measured using impedance technique. {yields} Scanning electron microscope and energy disperse X-ray were used to analyze the etched surfaces. {yields} Etching in aqueous HF solution containing HNO{sub 3} led to formation of a porous silicon layer. {yields} The formation of the porous silicon layer in HF/KMnO{sub 4} was accompanied by deposition of K{sub 2}SiF{sub 6} on the pores surfaces. - Abstract: Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated by electrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively. A porous silicon layer was formed on Si etched in HF solutions containing HNO{sub 3}, while etching in HF solutions containing KMnO{sub 4} led to the formation of a porous layer and simultaneous deposition of K{sub 2}SiF{sub 6} inside the pores. The thickness of K{sub 2}SiF{sub 6} layer increases with increasing the KMnO{sub 4} concentration and decreases as the concentration of HF increases.

  5. High resolution electron energy loss spectroscopy of clean and hydrogen covered Si(001) surfaces: first principles calculations.

    Science.gov (United States)

    Patterson, C H

    2012-09-07

    Surface phonons, conductivities, and loss functions are calculated for reconstructed (2×1), p(2×2) and c(4×2) clean Si(001) surfaces, and (2×1) H and D covered Si(001) surfaces. Surface conductivities perpendicular to the surface are significantly smaller than conductivities parallel to the surface. The surface loss function is compared to high resolution electron energy loss measurements. There is good agreement between calculated loss functions and experiment for H and D covered surfaces. However, agreement between experimental data from different groups and between theory and experiment is poor for clean Si(001) surfaces. Formalisms for calculating electron energy loss spectra are reviewed and the mechanism of electron energy losses to surface vibrations is discussed.

  6. Photoconduction spectroscopy of p-type GaSb films

    Energy Technology Data Exchange (ETDEWEB)

    Shura, M.W., E-mail: Megersa.Shura@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

  7. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    Science.gov (United States)

    Li, M.; Cheng, Y.; Zheng, Y. F.; Zhang, X.; Xi, T. F.; Wei, S. C.

    2012-01-01

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 ± 1 °C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  8. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    Energy Technology Data Exchange (ETDEWEB)

    Li, M. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Cheng, Y., E-mail: chengyan@pku.edu.cn [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Zheng, Y.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871 (China); Zhang, X.; Xi, T.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Wei, S.C. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Oral and Maxillofacial Surgery, School and Hospital of Stomatology, Peking University, Beijing 100871 (China)

    2012-01-15

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 {+-} 1 Degree-Sign C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  9. Mono-Fluorinated Alkyne-Derived SAMs on Oxide-Free Si(III) Surfaces: Preparation, Characterization and Tuning of the Si Workfunction

    NARCIS (Netherlands)

    Pujari, S.P.; Andel, van E.; Yaffe, O.; Cahen, D.; Weidner, T.; Rijn, van C.J.M.; Zuilhof, H.

    2013-01-01

    Organic monolayers derived from ¿-fluoro-1-alkynes of varying carbon chain lengths (C(10)-C(18)) were prepared on Si(111) surfaces, resulting in changes of the physical and electronic properties of the surface. Analysis of the monolayers using XPS, Infrared Reflection Absorption Spectroscopy, ellips

  10. Scanning Tunneling Spectroscopy Study of Single Layer Step Edges on Si (100) Surfaces

    Science.gov (United States)

    Wang, Xiqiao; Namboodiri, Pradeep; Li, Kai; Deng, Xiao; Silver, Richard

    Advanced Hydrogen lithography enables the fabrication of atomically precise donor-based quantum devices on Si(100) surfaces. Understanding the defect and step edge interaction with local electronic and geometric structures is needed to properly interpret device measurement results. Low temperature Si epitaxy, used to encapsulate devices, introduces island growth and step edges near/above buried donor nanostructures, presenting a real challenge in relocating and characterizing buried donor devices using Scanning Tunneling Microscopy/Spectroscopy (STM/STS). We present spatially resolved STS results across single layer steps on Si(100) surfaces. While the electronic properties across SA steps were found to be very similar to that on flat terraces, we observed an edge induced gap state on rebonded SB step edges, which was assigned to the unpaired dangling bond state at the lower edge atom of the rebonded SB steps. In addition, we used computational simulation within Bardeen's formalism to probe the influence of subsurface doping density profiles on the observed STS features over step edges and other defects. This study will help to elucidate the role played by surface step edges and subsurface doping densities in characterizing surface and subsurface nanostructures using STS/STM.

  11. Effect of fiber orientations on surface grinding process of unidirectional C/SiC composites

    Science.gov (United States)

    Zhang, Lifeng; Ren, Chengzu; Ji, Chunhui; Wang, Zhiqiang; Chen, Guang

    2016-03-01

    The machining mechanism of woven ceramic matrix composites is one of the most challenging problems in composite application. To elucidate the grinding mechanism of the woven ceramic matrix composites, a new model material consisting of unidirectional CVI-C/SiC was prepared and ground. The composite was ground in three typical directions and the experimental investigation of the surface grinding process for this composite is described. In addition, the micro structural characteristics and grinding mechanism of the composite were analyzed. The result shows that brittle fracture is the dominant removal mechanism for grinding of the C/SiC composites, and the destroy form of the composites is mainly the syntheses of the matrix cracking, fiber fracture, and interfacial debonding. The grinding force follows the order: Normal > Longitudinal > Transverse, and the surface roughness follows: Longitudinal > Normal > Transverse. The grinding parameters (feed speed, cut depth, grinding speed) have great influence on the grinding force and surface roughness. Based on the findings, the grinding force and surface integrity of the woven ceramic matrix composites can be predicted. Furthermore, it is expected to provide a useful guideline for the design, evaluation and optimal application of the C/SiC composites.

  12. Molecular modeling of alkyl monolayers on the Si(100)-2 x 1 surface.

    Science.gov (United States)

    Lee, Michael V; Guo, Dawei; Linford, Matthew R; Zuilhof, Han

    2004-10-12

    Molecular modeling was used to simulate various surfaces derived from the addition of 1-alkenes and 1-alkynes to Si=Si dimers on the Si(100)-2 x 1 surface. The primary aim was to better understand the interactions between adsorbates on the surface and distortions of the underlying silicon crystal due to functionalization. Random addition of ethylene and acetylene was used to determine how the addition of an adduct molecule affects subsequent additions for coverages up to one molecule per silicon dimer, that is, 100% coverage. Randomization subdues the effect that the relative positions of the adsorbates have on the enthalpy of the system. For ethylene and acetylene, the enthalpy of reaction changes less than 3 and 5 kcal/mol, respectively, from the first reacted species up to 100% coverage. As a result, a (near-)complete coverage is predicted, which is in line with experimental data. When 1-alkenes and 1-alkynes add by [2 + 2] addition, the hydrocarbon chains interact differently depending on the direction they project from the surface. These effects were investigated for four-carbon chains: 1-butene and 1-butyne. As expected, the chains that would otherwise intersect bend to avoid each other, raising the enthalpy of the system. For alkyl chains longer than four carbons, the chains are able to reorient themselves in a favorable manner, thus, resulting in a steady reduction in reaction enthalpy of about 2 kcal/mol for each additional methylene unit.

  13. Microwave absorbing performance enhancement of Fe75Si15Al10 composites by selective surface oxidation

    Science.gov (United States)

    Zhang, Nan; Wang, Xin; Liu, Tao; Xie, Jianliang; Deng, Longjiang

    2017-09-01

    An excessively large dielectric constant is a challenge to improve the performances of the Fe-based absorbing material. Here, we propose a selective surface oxidation method to reduce the permittivity without sacrificing the permeability, by annealing under 5%H2—95%N2 (H2/N2). It is found that a thin layer of aluminum and silicon oxides formed on the surface of Fe75Si15Al10 particles during annealing in the range of 500-780 °C under H2/N2, thereby leading to an obvious decrease of permittivity of the Fe75Si15Al10 composite. According to Gibbs free energy, aluminum and silicon oxides are formed and iron oxides are reduced during annealing under H2/N2 at above 500 °C. Interestingly, the XPS result shows that the atomic ratio of Fe decreases significantly on the particle surface, which infers that the reduced Fe atoms diffuse to the interior of the particles. The surface oxide layer can protect the inner part of the alloy from further oxidation, which contributes to a high permeability. Meanwhile, the XRD result shows the formation of DO3-type ordering, which leads to the promotion of permeability. The two reasons lead to the improvement of permeability of the Fe75Si15Al10 composite after annealing. The composite is confirmed to have high permeability and low permittivity, exhibiting better electromagnetic wave absorption properties.

  14. Influence of surface cleaning effects on properties of Schottky diodes on 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kwietniewski, N. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland)], E-mail: nkwietni@ite.waw.pl; Sochacki, M.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland); Guziewicz, M.; Kaminska, E.; Piotrowska, A. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2008-10-15

    Ir/4H-SiC and IrO{sub 2}/4H-SiC Schottky diodes are reported in terms of different methods of surface pretreatment before contact deposition. In order to find the effect of surface preparation processes on Schottky characteristics the SiC wafers were respectively cleaned using the following processes: (1) RCA method followed by buffered HF dip. Next, the surface was oxidized (5.5 nm oxide) using a rapid thermal processing reactor chamber and circular geometry windows were opened in the oxide layer before metallization deposition; (2) the same as sequence (1) but with an additional in situ sputter etching step before metallization deposition; (3) cleaning in organic solvents followed by buffered HF dip. The I-V characteristics of Schottky diodes were analyzed to find a correlation between extracted parameters and surface treatment. The best results were obtained for the sequence (1) taking into account theoretical value of Schottky barrier height. The contacts showed excellent Schottky behavior with ideality factors below 1.08 and barrier heights of 1.46 eV and 1.64 eV for Ir and IrO{sub 2}, respectively. Very promising results were obtained for samples prepared using the sequence (2) taking into account the total static power losses because the modified surface preparation results in a decrease in the forward voltage drop and reverse leakage current simultaneously. The contacts with ideality factor below 1.09 and barrier height of 1.02 eV were fabricated for Ir/4H-SiC diodes in sequence (2)

  15. A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs

    Science.gov (United States)

    Pham, A. T.; Nguyen, C. D.; Jungemann, C.; Meinerzhagen, B.

    2006-04-01

    A new semiempirical surface scattering model for electrons in strained Si devices including a quantum correction has been developed and implemented into our FBMC simulator. The strain is assumed to be consistent with pseudomorphic growth on a relaxed SiGe buffer. By introducing a few additional terms into the physical scattering rates which depend on the Ge-content in the SiGe buffer, the new surface scattering model can excellently reproduce low-field inversion layer mobility measurements for a wide range of Ge-content (0-30%) and substrate doping levels (10 16-5.5 × 10 18 cm -3). As a device example, an NMOSFET with 23 nm gate length with and without a strained Si channel has been simulated by the new FBMC model.

  16. Fabrication and Surface Properties of Composite Films of SAM/Pt/ZnO/SiO 2

    KAUST Repository

    Yao, Ke Xin

    2008-12-16

    Through synthetic architecture and functionalization with self-assembled monolayers (SAMs), complex nanocomposite films of SAM/Pt/ZnO/SiO2 have been facilely prepared in this work. The nanostructured films are highly uniform and porous, showing a wide range of tunable wettabilities from superhydrophilicity to superhydrophobicity (water contact angles: 0° to 170°). Our approach offers synthetic flexibility in controlling film architecture, surface topography, coating texture, crystallite size, and chemical composition of modifiers (e.g., SAMs derived from alkanethiols). For example, wettability properties of the nanocomposite films can be finely tuned with both inorganic phase (i.e., ZnO/SiO2 and Pt/ZnO/SiO2) and organic phase (i.e., SAMs on Pt/ZnO/SiO2). Due to the presence of catalytic components Pt/ZnO within the nanocomposites, surface reactions of the organic modifiers can further take place at room temperature and elevated temperatures, which provides a means for SAM formation and elimination. Because the Pt/ZnO forms an excellent pair of metal-semiconductors for photocatalysis, the anchored SAMs can also be modified or depleted by UV irradiation (i.e., the films possess self-cleaning ability). Potential applications of these nanocomposite films have been addressed. Our durability tests also confirm that the films are thermally stable and structurally robust in modification- regeneration cycles. © 2008 American Chemical Society.

  17. Molecular dynamics simulations of dotriacontane films supported on a SiO2 surface

    Science.gov (United States)

    Gutierrez, Sebastian; Araya, Raul; Perez-Acle, Tomas; Retamal, Maria Jose; Volkmann, Ulrich G.

    2011-03-01

    Dotriacontane (C32 H66 , C32) films supported on Si O2 surfaces were studied using very high-resolution ellipsometry, atomic force microscopy (AFM) and x-ray reflectivity techniques. For almost complete layers a model was proposed in which the C32/ Si O2 interfacial region is characterized by a parallel bilayer and perpendicular layers on top. Recent AFM measurements performed on samples forming sea-weed like structures, showed that for these particular perpendicular ``fractal like'' layers the heights are lower than the all-trans length of dotriacontane (42.5 AA). To gain insights on the internal molecular ordering and layering of C32 supported on Si O2 surfaces, we used all-atom molecular dynamics to simulate C32 films at different temperatures. Our results confirm the presence of the parallel bilayer suggesting the existence of a mixed layer on top, formed by molecules with both parallel and perpendicular segments. These findings suggest a different molecular architecture for sea-weed like structures of dotriacontane supported on Si O2 .

  18. Layer uniformity in glucose oxidase immobilization on SiO{sub 2} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Libertino, Sebania [CNR - IMM unita Catania, Stradale Primosole 50, 95121 Catania (Italy)], E-mail: sebania.libertino@imm.cnr.it; Scandurra, Antonino [Laboratorio Superfici e Interfasi (SUPERLAB), Consorzio Catania Ricerche, Stradale Primosole 50, 95121 Catania (Italy); Aiello, Venera [CNR - IMM unita Catania, Stradale Primosole 50, 95121 Catania (Italy); Universita degli Studi di Catania, Dipartimento di Chimica Biologica, Chimica Medica e Biologia Molecolare, Viale A.Doria, 6, 95125 Catania (Italy); Giannazzo, Filippo [CNR - IMM unita Catania, Stradale Primosole 50, 95121 Catania (Italy); Sinatra, Fulvia [Universita degli Studi di Catania, Dipartimento di Scienze Biomediche, Via S. Sofia, 87, 95100 Catania (Italy); Renis, Marcella [Universita degli Studi di Catania, Dipartimento di Chimica Biologica, Chimica Medica e Biologia Molecolare, Viale A.Doria, 6, 95125 Catania (Italy); Fichera, Manuela [CNR - IMM unita Catania, Stradale Primosole 50, 95121 Catania (Italy)

    2007-09-30

    The goal of this work was the characterization, step by step, of the enzyme glucose oxidase (GOx) immobilization on silicon oxide surfaces, mainly by means of X-Ray photoelectron spectroscopy (XPS). The immobilization protocol consists of four steps: oxide activation, silanization, linker molecule deposition and GOx immobilization. The linker molecule, glutaraldehyde (GA) in this study, must be able to form a uniform layer on the sample surface in order to maximize the sites available for enzyme bonding and achieve the best enzyme deposition. Using a thin SiO{sub 2} layer grown on Si wafers and following the XPS Si2p signal of the Si substrate during the immobilization steps, we demonstrated both the glutaraldehyde layer uniformity and the possibility to use XPS to monitor thin layer uniformity. In fact, the XPS substrate signal, not shielded by the oxide, is suppressed only when a uniform layer is deposited. The enzyme correct immobilization was monitored using the XPS C1s and N1s signals. Atomic force microscopy (AFM) measurements carried out on the same samples confirmed the results.

  19. Surface modification of an up-conversion luminescence material by overcoating with SiO2 and its characterization

    Institute of Scientific and Technical Information of China (English)

    CUI Lili; LIU Jiemin; FAN Huili; XU Xiaowei; YANG Min; XIAO Junping

    2007-01-01

    The surface of an up-conversion luminescence material was modified by overcoating with SiO2, which was synthesized from a hydrolysis progress of tetraethoxysilane (TEOS) in alkalescent condition. By analyzing the hydrolyzed mechanism of TEOS, it was found that there was not only physical adsorption but also chemical bonding between the up-conversion material and SiO2. At the same time, some adsorption bands at 1100, 475, 950, and 3500 cm-1 were found by FI-IR, which were the characteristic bands of Si-OH and Si-O-Si. By analyzing the surface elements of the coated material by XPS, it was found that its surface only included Si, O, and C elements, and not F and Y. In the picture of XRD, there was no additional peak after surface modification, suggesting that the silica shell was amorphous. The small peak at 2θ = 23° in the X-ray diffraction pattern of the coated material was caused by the amorphous SiO2 shell, and the TEM image also proved that the surface of the material was successfully modified by overcoating with SiO2. The amount of hydroxyls was then increased on the surface of the material, which made it easy to connect with other active groups.

  20. Preparation of thin Si:H films in an inductively coupled plasma reactor and analysis of their surface roughness

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Wenfeng [School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Technology, South China Normal University, Guangzhou 510006 (China); College of Engineering, South China Agricultural University, Guangzhou 510642 (China); Chen Junfang, E-mail: chenjf@scnu.edu.cn [School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Technology, South China Normal University, Guangzhou 510006 (China); Meng Ran; Wang Yang; Wang Hui; Guo Chaofeng; Xue Yongqi [School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Technology, South China Normal University, Guangzhou 510006 (China)

    2010-01-15

    An important concern in the deposition of Si:H films is to obtain smooth surfaces. Herein, we deposit the thin Si:H films using Ar-diluted SiH{sub 4} as feedstock gas in an inductively coupled plasma reactor. And we carry a real-time monitor on the deposition process by using optical emission spectrum technology in the vicinity of substrate and diagnose the Ar plasma radial distribution by Langmuir probe. Surface detecting by AFM and surface profilometry in large scale shows that the thin Si:H films have small surface roughness. Distributions of both the ion density and the electron temperature are homogeneous at h = 0.5 cm. Based on these experimental results, it can be proposed inductively coupled plasma reactor is fit to deposit the thin film in large scale. Also, Ar can affect the reaction process and improve the thin Si:H films characteristics.

  1. Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

    KAUST Repository

    Chen, Yin

    2014-03-10

    By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.

  2. Model, First-Principle Calculation of Ammonia Dissociation on Si(100 Surface. Importance of Proton Tunneling

    Directory of Open Access Journals (Sweden)

    Marek Z. Zgierski

    2003-06-01

    Full Text Available Abstract: The dissociation of an ammonia molecule on a cluster of Si atoms simulating the 100 silicon crystal structure with two Si dimers has been investigated by means of the DFT and an approximate instanton methods. The model corresponds to the low coverage limit of the surface. Absolute rate constants of two different dissociation paths are evaluated together with deuterium isotope effects. It is demonstrated that, even at room temperatures, the process is dominated by tunneling and that dissociation to a silicon atom of the adjacent dimer, rather than a silicon within the same dimer, is the prevailing mechanism. This leads to creation of a metastable structure which will slowly decay through a two-step hydrogen atom migration towards the absolute minimum on the potential energy surface corresponding to the NH2 group and the hydrogen atom residing in the same dimer.

  3. Bismuth-indium two-dimensional compounds on Si(111) surface

    Science.gov (United States)

    Denisov, N. V.; Alekseev, A. A.; Utas, O. A.; Azatyan, S. G.; Zotov, A. V.; Saranin, A. A.

    2016-09-01

    Using scanning tunneling microscopy (STM) observations, it has been found that codeposition of Bi and In onto Si(111)7 × 7 surface, followed by 250-550 °C annealing, induces formation of a set of the ordered (Bi, In)/Si(111) stable structures, including 2 √ 3 × 3, 5 × 5, √ 7 × √ 7 and 2 × 2. Under appropriate conditions, the structures can occupy almost the entire surface, except for 2 √ 3 × 3 which is formed only locally. Scanning tunneling spectroscopy has demonstrated that the 5 × 5 and √ 7 × √ 7 structures are semiconducting, while the 2 × 2 is metallic. The 5 × 5, √ 7 × √ 7, and 2 × 2 structural models have been proposed on the basis of DFT calculations and comparison of simulated and experimental STM images.

  4. Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Petersen, Paul Michael

    2016-01-01

    photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed...... above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed to surface state produced during the anodic etching....

  5. Self-Organized Two-Dimensional Vidro-Nanodot Array on Laser-Irradiated Si Surface

    Science.gov (United States)

    Yoshida, Yutaka; Sakaguchi, Norihito; Watanabe, Seiichi; Kato, Takahiko

    2011-05-01

    We report a periodic two-dimensional (2D) array of uniquely shaped dotlike nanoprotrusions (NPs), which simultaneously self-organize on a Si surface under pulsed laser irradiation. The shape of the dotlike NPs can be controlled by adjusting the number of laser pulses. The flask-shaped dotlike NP array is named a vidro-nanodot (VND) array. We present a detailed analysis of the internal structure of VND using high-resolution electron microscopy.

  6. Analysis of surface damage produced by pulsed laser ablation on metal Al and semiconductor Si

    Institute of Scientific and Technical Information of China (English)

    ManBao-Yuan; LiuAi-Hua; 等

    1998-01-01

    The suraface morphological changesd produced by Nd:YAG pulsed laser ablation of metal Al and semiconductor Si were carefully examined and analyzed by using scanning elkectron microscope.The formation mechanism of the droplets was discussed.and the reasons for formation of the microcracks on the laser irradiated area of the target surface were analyzed by calculating the thermal stress,the vapor pressure and the shock pressure induced by the laser supported detonation.

  7. Effect of droplet size on wetting behavior on laser textured SiC surface

    Science.gov (United States)

    Wang, Rong; Bai, Shaoxian

    2015-10-01

    Effect of droplet size on wetting behavior on laser textured SiC surface was studied in this work. The micro-square-convex surface was processed on smooth surface with intrisinc contact angle 101°. Then contact angles were measured on both smooth and textured surface by sessile drop method using deionized water with different droplet volume. It was found that there was significant droplet size effect on wetting behaviors for the textured SiC surface. Contact angles on smooth surface kept stable for different water droplet volume with a variation amplitude 13°. However, contact angles increased significantly from 42.25° to 131.25° with increasing droplet volume from 0.001 μL to 1 μL, then remained unchanged when the droplet volume exceeds 1 μL. The correlation analysis shows that contact angles increase with the increasing ratio of base diameter and groove width, then keep stable when the ratio exceeds 25, which explains the wetting behavior for different droplet volume.

  8. Surface Property and Stability of Transparent Superhydrophobic Coating Based on SiO2-Polyelectrolyte Multilayer

    Directory of Open Access Journals (Sweden)

    Sunisa JINDASUWAN

    2016-05-01

    Full Text Available Artificial superhydrophobic films were deposited onto a glass slide by performing layer-by-layer deposition of 3.5 bilayers of poly(allylamine hydrochloride/ poly(acrylic acid polyelectrolyte, followed by a layer of SiO2 nanoparticles of various amounts to enhance the surface roughness and a fluorosilane to reduce the surface free energy. Higher SiO2 content incorporated into the films resulted in rougher surface and higher water contact angle. The total surface free energy determined by using the Owens-Wendt equation dramatically decreased from 31.46 mJ·m-2 for the film having the relatively flat surface to only 1.16 mJ·m-2 for the film having the highest surface roughness of 60.2 ± 1.1 nm. All the films were optically transparent and had excellent adhesion based on the peel test. Indoor and accelerated weathering tests revealed good weathering stability.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12952

  9. Surface Property and Stability of Transparent Superhydrophobic Coating Based on SiO2-Polyelectrolyte Multilayer

    Directory of Open Access Journals (Sweden)

    Sunisa JINDASUWAN

    2016-05-01

    Full Text Available Artificial superhydrophobic films were deposited onto a glass slide by performing layer-by-layer deposition of 3.5 bilayers of poly(allylamine hydrochloride/ poly(acrylic acid polyelectrolyte, followed by a layer of SiO2 nanoparticles of various amounts to enhance the surface roughness and a fluorosilane to reduce the surface free energy. Higher SiO2 content incorporated into the films resulted in rougher surface and higher water contact angle. The total surface free energy determined by using the Owens-Wendt equation dramatically decreased from 31.46 mJ·m-2 for the film having the relatively flat surface to only 1.16 mJ·m-2 for the film having the highest surface roughness of 60.2 ± 1.1 nm. All the films were optically transparent and had excellent adhesion based on the peel test. Indoor and accelerated weathering tests revealed good weathering stability.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12952

  10. Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Satish; Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in [International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2016-02-07

    We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses. The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.

  11. Surface acoustic wave ammonia sensor based on ZnO/SiO2 composite film.

    Science.gov (United States)

    Wang, Shuang-Yue; Ma, Jin-Yi; Li, Zhi-Jie; Su, H Q; Alkurd, N R; Zhou, Wei-Lie; Wang, Lu; Du, Bo; Tang, Yong-Liang; Ao, Dong-Yi; Zhang, Shou-Chao; Yu, Q K; Zu, Xiao-Tao

    2015-03-21

    A surface acoustic wave (SAW) resonator with ZnO/SiO2 (ZS) composite film was used as an ammonia sensor in this study. ZS composite films were deposited on the surface of SAW devices using the sol-gel method, and were characterized using SEM, AFM, and XRD. The performance of the sensors under ammonia gas was optimized by adjusting the molar ratio of ZnO:SiO2 to 1:1, 1:2 and 1:3, and the sensor with the ratio of ZnO to SiO2 equaling to 1:2 was found to have the best performance. The response of sensor was 1.132 kHz under 10 ppm NH3, which was much higher than that of the sensor based on a pristine ZnO film. Moreover, the sensor has good selectivity, reversibility and stability at room temperature. These can be attributed to the enhanced absorption of ammonia and unique surface reaction on composite films due to the existence of silica. Copyright © 2014 Elsevier B.V. All rights reserved.

  12. Benchmarking surface signals when growing GaP on Si in CVD ambients

    Energy Technology Data Exchange (ETDEWEB)

    Doescher, Henning

    2010-10-26

    The present work investigates the formation of GaP films prepared on Si(100) surfaces and their anti-phase disorder in metalorganic vapor phase epitaxy (MOVPE) ambients. GaP films grown on Si(100) substrates served as a lattice matched model system for the crucial III-V/Si(100) interface to form silicon-based quasi substrates. A variety of surface-sensitive methods was required to establish suitable silicon substrate preparation and subsequent GaP growth free of anti-phase domains (APDs) by analyzing the substrate surface, the interface and the epitaxial films resulting from the heteroepitaxial nucleation process. Thorough investigations in the MOVPE ambients and an appropriate improvement of the equipment and of the VPE preparation process of the substrates led to clean Si(100) surfaces free of oxygen and other contaminants, as was evidenced by Xray photoelectron spectroscopy. Predominantly double-layer stepped Si(100) surfaces, as a prerequisite for subsequent III-V integration, were obtained for 0.1 , 2 and 6 misorientation in [011] direction. In contrast to standard preparation in ultra-high vacuum (UHV), the double-layer steps on 0.1 and 2 samples featured dimers oriented perpendicular to the step edges, contradicting well-established results with and without hydrogen coverage obtained in UHV. This striking difference was attributed to the presence of hydrogen as a process gas in the MOVPE environment leading to a silicon surface covered by monohydrides after substrate preparation, as was determined by Fourier-transform infrared spectroscopy (FTIR), while reflectance anisotropy spectroscopy (RAS) showed the absence of hydrogen termination at higher temperatures. On these substrates, optical in situ spectroscopy was established as a method for the quantitative evaluation of the APD content in GaP heteroepitaxy. The analysis required a detailed understanding of the GaP(100) surface reconstructions, which have been described theoretically in the literature and

  13. Evidence for an iron-hydrogen complex in p-type silicon

    Science.gov (United States)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  14. Optical, photocatalytical and structural properties of TiO2 – SiO2 sol-gel coatings on high content SiO2 enamel surface

    Directory of Open Access Journals (Sweden)

    Kaspars Mālnieks

    2015-03-01

    Full Text Available TiO2 – SiO2 films deposited on enamel surface were investigated for self - cleaning applications. The TiO2 – SiO2 optical films prepared from a sol–gel precursor were deposited on enamel surface using dip - coating techniques. Films were calcined different time from one hour till ten hours to investigate effect of calcination on self-cleaning and structural properties. Effects of film crystal structure, microstructure, photocatalytic activity and optical properties of the films were investigated using XRD, AFM and spectrophotometer and contact angle measurement. The TiO2 – SiO2 dip - coating optical films calcined 1 h resulted in high structured surfaces, which found to increase the photocatalytic activity.DOI: http://dx.doi.org/10.5755/j01.ms.21.1.5188

  15. Methanol adsorption on /γ-irradiated SiO2 surface

    Science.gov (United States)

    Novák, Éva; Hancz, András; Erdöhelyi, András

    2003-01-01

    The adsorption of methanol on γ-irradiated and un-irradiated SiO 2 surfaces pretreated at 473 K was investigated by Fourier transform infrared spectroscopy, temperature programmed desorption (TPD) and pulse methods. Methanol adsorbed only in molecular form on the un-irradiated sample. Treating the pre-irradiated silica surface with methanol at room temperature formaldehyde and hydrogen were formed. The methanol adsorbed on the irradiated silica transformed to formyl groups during a longer time at room temperature and desorbed as formaldehyde simultaneously with CH 3OH ( Tmax=395 K) on the TPD.

  16. Electrical charge trapping at defects on the Si(111)7×7 surface

    Science.gov (United States)

    Jiang, C.-S.; Moutinho, H. R.; Romero, M. J.; Al-Jassim, M. M.; Kazmerski, L. L.

    2006-02-01

    We report on a direct measurement of electron trapping at defects on the Si(111)7×7 surface, by combining Kelvin probe force microscopy (KPFM) and scanning tunneling microscopy (STM) measurements. One-dimensional defects of atomic steps and two-dimensional defects of disordered domains were found on the surface. STM reveals that the disordered domain is located in the intersection area between three 7×7 domains. KPFM measurement shows that electrons are trapped at both the atomic steps and the disordered domains, and this electron trapping gives rise to a larger local work function on the defect region than on the defect-free 7×7 regions.

  17. Electronic transport through Si nanowires: Role of bulk and surface disorder

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, R.; Brandbyge, Mads

    2006-01-01

    on the situation a preferable method can be identified. Several numerical results are presented to illustrate the relative merits of the two methods. Our calculations of relaxed atomic structures and their conductance properties are based on density functional theory without introducing adjustable parameters. Two...... specific models of disorder are considered: Unpassivated, surface reconstructed SiNW's are perturbed by random on-site (Anderson) disorder whereas defects in hydrogen passivated wires are introduced by randomly removed H atoms. The unpassivated wires are very sensitive to disorder in the surface whereas...

  18. Electrical conductivity of reconstructed Si(111) surface with sodium-doped C60 layers

    Science.gov (United States)

    Tsukanov, D. A.; Ryzhkova, M. V.; Borisenko, E. A.; Zotov, A. V.; Saranin, A. A.

    2015-01-01

    Electrical conductance of sodium-doped C60 ultra-thin layers (1-6 monolayers) grown on the Na-adsorbed Si(111)√3 × √3-Au surface has been studied in situ by four-point probe technique, combined with low-energy electron diffraction observations. Evidence of conductance channel formation through the C60 ultrathin layer is demonstrated as a result of Na dosing of 3 and 6 monolayers thick C60 layers. The observed changes in surface conductivity can be attributed to the formation of fulleride-like NaC60 and Na2C60 compound layers.

  19. Giant Magnetoimpedance Effect in Surface Modified CoFeMoSiB Amorphous Ribbons

    Institute of Scientific and Technical Information of China (English)

    M. A. Cerdeira; G. V. Kurlyandskaya; A. Fernandez; M. Tejedor; H. Garcia-Miquel

    2003-01-01

    Thin magnetic Fe layers in thickness of 10-240 nm were deposited onto a wheel surface of CoFeMoSiB amorphous ribbons to check our concept of a new type of heterogeneous magnetoimpedancematerials formed by two different magnetic parts. The presence of an additional iron layer modifies the magnetoimpedance response of the composite material and leads to increase of the magnetoimpedance ratio from 330 to 345% at a frequency of 3.5MHz.Two possible mechanisms are discussed for explanation to the observed behaviour. Modification of the surface properties of the amorphous ribbons may have certain potential for techmological applications.

  20. Scanning tunneling microscopy of monoatomic gold chains on vicinal Si(335) surface: experimental and theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Krawiec, M.; Kwapinski, T.; Jalochowski, M. [Institute of Physics and Nanotechnology Center, M. Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin (Poland)

    2005-02-01

    We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one band tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Chen, X.; Tonner, B.P. [Univ. of Wisconsin, Milwaukee, WI (United States); Denlinger, J. [Univ. of Wisconsin, Milwaukee, WI (United States)][Ernest Orlando Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    The authors have performed angle-resolved x-ray photoelectron diffraction (XPD) from a Si(100)-c(4x2) surface to study the structural origin of Si-2p core-level shifts. In the experiment, the highly resolved surface Si-2p core-level spectra were measured as a fine grid of hemisphere and photon energies, using the SpectroMicroscopy Facility {open_quotes}ultraESCA{close_quotes} instrument. By carefully decomposing the spectra into several surface peaks, the authors are able to obtain surface-atom resolved XPD patterns. Using a multiple scattering analysis, they derived a detailed atomic model for the Si(100)-c(4x2) surface. In this model, the asymmetric dimers were found tilted by 11.5 plus/minus 2.0 degrees with bond length of 2.32 plus/minus 0.05{angstrom}. By matching model XPD patterns to experiment, the authors can identify which atoms in the reconstructed surface are responsible for specific photoemission lines in the 2p spectrum.

  2. Preparation of polystyrene/SiO2 nanocomposites by surface-initiated nitroxide-mediated radical polymerization

    Institute of Scientific and Technical Information of China (English)

    NI Gang; YANG Wu; BO Lili; GUO Hao; ZHANG Wenhao; GAO Jinzhang

    2006-01-01

    Polystyrene/SiO2 composite nanoparticles (PS-g-Silica) were prepared by an in-situ surface-initiated nitroxide-mediated radical polymerization. After SiO2 nanoparticles were treated by thionyl chloride (SOCl2), peroxide initiation groups were immobilized on their surfaces through a reaction with tertiary butyl hydroperoxide (TBHP). Then surface nitroxide-mediated radical polymerization was initiated and polystyrene was grafted on the surface of SiO2 particles. Composite nanoparticles were characterized by IR spectra, transmission electron microscopy (TEM), atomic force microscopy (AFM) and thermogravimetry (TGA) and the results indicated that the surface-initiated nitroxide-mediated radical polymerization could be successfully used to synthesize well-dispersive PS/SiO2 nanocomposites.

  3. Functional Si and CdSe quantum dots: synthesis, conjugate formation, and photoluminescence quenching by surface interactions.

    Science.gov (United States)

    Sudeep, P K; Emrick, Todd

    2009-12-22

    Silicon quantum dots (QDs) were prepared with a corona of di-n-octyl phosphine oxides, by performing hydrosilylation chemistry on the surface of hydrogen-terminated Si QDs. These novel Si QDs proved well-suited to serve as "ligands" for other semiconductor QDs, such as CdSe, by interaction of the phosphine oxide corona with the CdSe surface. A pronounced photoluminescence quenching of CdSe quantum dots was observed upon introduction of the phosphine oxide functionalized Si QDs to a CdSe QD solution. Surface functionalization of the Si QDs proved critically important to observing these effects, as conventional (alkane-covered) Si QD samples gave no evidence of electronic interactions with TOPO-covered CdSe. In a comparative system, phosphine oxide terminated oligo(phenylene vinylene) molecules acting as CdSe QD ligands provide a similar fluorescence quenching, with exciton decay kinetics supporting the formation of an electronically interacting hybrid materials system.

  4. Alkane metathesis with the tantalum methylidene [(≡SiO)Ta(=CH2)Me2]/[(≡SiO)2Ta(=CH2)Me] generated from well-defined surface organometallic complex [(≡SiO)TaVMe4

    KAUST Repository

    Chen, Yin

    2015-01-21

    By grafting TaMe5 on Aerosil700, a stable, well-defined, silica-supported tetramethyl tantalum(V) complex, [(≡SiO)TaMe4], is obtained on the silica surface. After thermal treatment at 150 °C, the complex is transformed into two surface tantalum methylidenes, [(≡SiO)2Ta(=CH2)Me] and [(≡SiO)Ta(=CH2)Me2], which are active in alkane metathesis and comparable to the previously reported [(≡SiO)2TaHx]. Here we present the first experimental study to isolate and identify a surface tantalum carbene as the intermediate in alkane metathesis. A systematic experimental study reveals a new reasonable pathway for this reaction.

  5. Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Haining; Kim, Seungchul; Lee, Kwang-Ryeol, E-mail: krlee@kist.re.kr [Computational Science Research Center, Korea Institute of Science and Technology, 5, Hwarangno 14-gil, Seongbuk-gu, Seoul 02792 (Korea, Republic of); Department of Nanomaterial Science and Technology, Korea University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of); Srivastava, Pooja; Choi, Keunsu [Computational Science Research Center, Korea Institute of Science and Technology, 5, Hwarangno 14-gil, Seongbuk-gu, Seoul 02792 (Korea, Republic of)

    2016-03-28

    Initial stage of oxynitridation process of Si substrate is of crucial importance in fabricating the ultrathin gate dielectric layer of high quality in advanced MOSFET devices. The oxynitridation reaction on a relaxed Si(001) surface is investigated via reactive molecular dynamics (MD) simulation. A total of 1120 events of a single nitric oxide (NO) molecule reaction at temperatures ranging from 300 to 1000 K are statistically analyzed. The observed reaction kinetics are consistent with the previous experimental or calculation results, which show the viability of the reactive MD technique to study the NO dissociation reaction on Si. We suggest the reaction pathway for NO dissociation that is characterized by the inter-dimer bridge of a NO molecule as the intermediate state prior to NO dissociation. Although the energy of the inter-dimer bridge is higher than that of the intra-dimer one, our suggestion is supported by the ab initio nudged elastic band calculations showing that the energy barrier for the inter-dimer bridge formation is much lower. The growth mechanism of an ultrathin Si oxynitride layer is also investigated via consecutive NO reactions simulation. The simulation reveals the mechanism of self-limiting reaction at low temperature and the time evolution of the depth profile of N and O atoms depending on the process temperature, which would guide to optimize the oxynitridation process condition.

  6. STM study of the Ga thin films grown on Si(111) surface

    Science.gov (United States)

    Tao, Min-Long; Tu, Yu-Bing; Sun, Kai; Ye, Juan; Hao, Shao-Jie; Xiao, Hua-Fang; Wang, Ya-Li; Xie, Zheng-Bo; Wang, Jun-Zhong

    2017-09-01

    Structural evolution of Ga thin films grown on the Si(111)-√{ 3 } × √{ 3 } -Ga template have been investigated with a low-temperature scanning tunneling microscopy (STM). The first Ga layer exhibits a stripe structure along the base vectors of Si(111) lattices. Individual Ga dimers have been directly visualized from the high-resolution STM images of the first Ga layer. The second Ga layer reveals a pseudo 1×1 structure with respect to the Si(111). A new 5×5 phase has been found in the second Ga layer when annealing the sample to 120 ℃. Further annealing to 150 ℃ leads to the formation of 6.3×6.3 phase, which is more stable than the 5×5 phase. The existences of a variety of superstructures of Ga films demonstrates the delicate balance between the interactions of Si(111)-Ga and Ga-Ga. These results shed important light on the epitaxial growth mechanism of Ga films on semiconductor surfaces.

  7. Nanoscale triboactivity of functionalized c-Si surfaces by Fe+ ion implantation

    Science.gov (United States)

    Nunes, B.; Alves, E.; Colaço, R.

    2016-04-01

    In the present work, we present a study of the effect of Fe+ ion implantation on the tribological response at nanoscale contact lengths of crystalline silicon (c-Si) surfaces. (1 0 0) silicon wafers were implanted with Fe+ at a fluence of 2  ×  1017 cm-2, followed by annealing treatments at temperatures of 800 °C and 1000 °C. After microstructural characterization, nanoabrasive wear tests were performed with an atomic force microscope (AFM) using an AFM diamond tip with a stiff steel cantilever that enables the application of loads between 1 μN and 8 μN. After the nanowear tests, the same AFM was used to visualize and measure the worn craters. It was observed that the as-implanted samples present the poorest nanowear response, i.e. the highest wear rate, even higher than that of the unimplanted Si wafers used as a reference. Nevertheless, annealing treatments result in a measurable increase in the nanowear resistance. In this way we show that Fe+ ion implantation of c-Si, followed by the proper post-heat treatment, results in the formation of FeSi2 nanoprecipitates finely dispersed in a recrystallized matrix. This can be a valuable way of optimizing the nanotribological behavior of silicon.

  8. Fabrication of DNA nanowires by orthogonal self-assembly and DNA intercalation on a Au patterned Si/SiO2 surface.

    Science.gov (United States)

    Kobayashi, Katsuaki; Tonegawa, Naoya; Fujii, Sho; Hikida, Jiro; Nozoye, Hisakazu; Tsutsui, Ken; Wada, Yasuo; Chikira, Makoto; Haga, Masa-Aki

    2008-11-18

    A novel Ru complex bearing both an acridine group and anchoring phosphonate groups was immobilized on a surface in order to capture double-stranded DNAs (dsDNAs) from solution. At low surface coverage, the atomic force microscopy (AFM) image revealed the "molecular dot" morphology with the height of the Ru complex ( approximately 2.5 nm) on a mica surface, indicating that four phosphonate anchor groups keep the Ru complex in an upright orientation on the surface. Using a dynamic molecular combing method, the DNA capture efficiency of the Ru complex on a mica surface was examined in terms of the effects of the number of molecular dots and surface hydrophobicity. The immobilized surface could capture DNAs; however, the optimal number of molecular dots on the surface as well as the optimal pull-up speed exist to obtain the extended dsDNAs on the surface. Applying this optimal condition to a Au-patterned Si/SiO 2 (Au/SiO 2) surface, the Au electrode was selectively covered with the Ru complex by orthogonal self-assembly of 4-mercaptbutylphosphonic acid (MBPA), followed by the formation of a Zr (4+)-phosphonate layer and the Ru complex. At the same time, the remaining SiO 2 surface was covered with octylphosphonic acid (OPA) by self-assembly. The selective immobilization of the Ru complex only on the Au electrode was identified by time-of-flight secondary-ion mass spectrometry (TOF-SIMS) imaging on the chemically modified Au/SiO 2 surface. The construction of DNA nanowires on the Au/SiO 2 patterned surface was accomplished by the molecular combing method of the selective immobilized Ru complex on Au electrodes. These interconnected nanowires between Au electrodes were used as a scaffold for the modification of Pd nanoparticles on the DNA. Furthermore, Cu metallization was achieved by electroless plating of Cu metal on a priming of Pd nanoparticles on the Pd-covered DNA nanowires. The resulting Cu nanowires showed a metallic behavior with relatively high resistance.

  9. A surface-mediated siRNA delivery system developed with chitosan/hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly

    Science.gov (United States)

    Wu, Lijuan; Wu, Changlin; Liu, Guangwan; Liao, Nannan; Zhao, Fang; Yang, Xuxia; Qu, Hongyuan; Peng, Bo; Chen, Li; Yang, Guang

    2016-12-01

    siRNA delivery remains highly challenging because of its hydrophilic and anionic nature and its sensitivity to nuclease degradation. Effective siRNA loading and improved transfection efficiency into cells represents a key problem. In our study, we prepared Chitosan/Hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly, in which siRNAs can be effectively loaded and protected. The construction process was characterized by FTIR, 13C NMR (CP/MAS), UV-vis spectroscopy, and atomic force microscopy (AFM). We presented the controlled-release performance of the films during incubation in 1 M NaCl solution for several days through UV-vis spectroscopy and polyacrylamide gel electrophoresis (PAGE). Additionally, we verified the stability and integrity of the siRNA loaded on multilayer films. Finally, the biological efficacy of the siRNA delivery system was evaluated via cells adhesion and gene silencing analyses in eGFP-HEK 293T cells. This new type of surface-mediated non-viral multilayer films may have considerable potential in the localized and controlled-release delivery of siRNA in mucosal tissues, and tissue engineering application.

  10. Surface diffusion of Sb on Si(111) measured by second harmonic microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Allen, C.E.; Seebauer, E.G. (Univ. of Illinois, Urbana, IL (United States))

    1995-01-01

    Surface diffusion of Sb on Si(111) has been studied by second harmonic microscopy, which uses surface second harmonic generation to monitor surface concentration profiles with a 3 [mu]m spatial resolution. At temperatures near 55% of the bulk melting point and in the coverage range 0 < [theta] < 0.12, the activation energy, E[sub diff], and pre-exponential factor, D[sub 0], were found to be 60 [+-] 3 kcal/mol and 6 x 10[sup 3+0.7] cm[sup 2]/s, respectively. The high prefactor and activation energy indicate that the surface diffusion is governed by a recently developed adatom-vacancy mechanism. 38 refs., 4 figs., 1 tab.

  11. Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

    Science.gov (United States)

    Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

    1991-01-01

    Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

  12. Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

    NARCIS (Netherlands)

    Palasantzas, G; Ilge, B; Rogge, S; Geerlings, LJ

    1999-01-01

    We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. First, we have fabricated Co/Si metal lines on Si(100) surfaces by UHV-STM based nanolithography on a monohydride passivation layer. The STM tip was used to define depassivated lines (

  13. Hybrid micro/nano-structure formation by angular laser texturing of Si surface for surface enhanced Raman scattering.

    Science.gov (United States)

    Xu, Kaichen; Zhang, Chentao; Zhou, Rui; Ji, Rong; Hong, Minghui

    2016-05-16

    Surface enhanced Raman spectroscopy (SERS) has drawn much research interest in the past decades as an efficient technique to detect low-concentration molecules. Among many technologies, which can be used to fabricate SERS substrates, laser ablation is a simple and high-speed method to produce large-area SERS substrates. This work investigates the angular texturing effect by dynamic laser ablation and its influence on SERS signals. By tuning the angle between the Si surface and laser irradiation, the distributions and sizes of laser induced hybrid micro/nano-structures are studied. By decorating with a silver film, plenty of hot spots can be created among these structures for SERS. It is found that when the incident laser angle is 15° at the laser fluence of 16.0 J/cm2, the SERS performance is well optimized. This work realizes antisymmetric distribution of nanoparticles deposited on Si surface, which provides a flexible tuning of the hybrid micro/nano-structures' fabrication with high controllability for practical applications.

  14. Schottky barrier modulation of metal/4H-SiC junction with thin interface spacer driven by surface polarization charge on 4H-SiC substrate

    Science.gov (United States)

    Choi, Gahyun; Yoon, Hoon Hahn; Jung, Sungchul; Jeon, Youngeun; Lee, Jung Yong; Bahng, Wook; Park, Kibog

    2015-12-01

    The Au/Ni/Al2O3/4H-SiC junction with the Al2O3 film as a thin spacer layer was found to show the electrical characteristics of a typical rectifying Schottky contact, which is considered to be due to the leakiness of the spacer layer. The Schottky barrier of the junction was measured to be higher than an Au/Ni/4H-SiC junction with no spacer layer. It is believed that the negative surface bound charge originating from the spontaneous polarization of 4H-SiC causes the Schottky barrier increase. The use of a thin spacer layer can be an efficient experimental method to modulate Schottky barriers of metal/4H-SiC junctions.

  15. Dissociative scattering of low-energy SiF{sub 3}{sup +} and SiF{sup +} ions (5-200 eV) on Cu(100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Hiroyuki; Baba, Yuji; Sasaki, T.A. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1997-03-01

    Dissociative scattering of molecular SiF{sub 3}{sup +} and SiF{sup +} ions from a Cu(100) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV with a scattering angle of 77deg. The scattered ion intensity of dissociative ions and parent molecular ions were measured as a function of incident ion energy. The observed data show that onset energies of dissociation for SiF{sub 3}{sup +} and SiF{sup +} ions are 30 eV and 40 eV, respectively. The obtained threshold energies are consistent with a impulsive collision model where the dissociation of incident ion is caused by vibrational excitation during collision. (author)

  16. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    Science.gov (United States)

    Angermann, Heike

    2014-09-01

    The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution Dit(E), and density Dit,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on concentrated solutions. Therefore, special attention was put on the development of more environmentally acceptable processes, utilizing e.g. hot pure water with low contents of oxygen or hydrochloric acid, and of ozone, working at ambient temperatures. According to our results, these methods could be a high quality and low cost alternative to current approaches with liquid chemicals for the preparation of hydrophobic Si substrate surfaces and ultra-thin passivating oxide layers. As demonstrated for selected examples, the effect of optimized wet-chemical pre-treatments can be preserved during subsequent soft plasma enhanced chemical vapor depositions of Si oxides (SiOx), or amorphous materials such as Si (a-Si:H), Si nitride (a-Si

  17. Surface photovoltage investigation of gold chains on Si(111) by two-photon photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Otto, Sebastian; Biedermann, Kerstin; Fauster, Thomas [Lehrstuhl fuer Festkoerperphysik, Universitaet Erlangen-Nuernberg, Staudtstr. 7, D-91058 Erlangen (Germany)

    2011-07-01

    We present surface photovoltage measurements on Si(111)-(7 x 7) with monoatomic gold chains. The gold coverage was varied between zero and 0.6 ML, where the Si(111)-(5 x 2)-Au reconstruction covers the surface completely. During the two-photon photoemission experiments the p- or n-doped samples were illuminated by infrared (IR, E{sub IR}=1.55 eV) and ultraviolet (UV, E{sub UV}=4.65 eV) laser pulses. For all coverages the photovoltage was determined for sample temperatures of 90 K and 300 K by variation of the IR and UV laser power. P-doped as well as n-doped Si(111) wafers show a linear dependence of the photovoltage on gold coverage. This stands in contrast to scanning tunneling spectroscopy measurements, which show a coverage-independent photovoltage over a wide coverage range for n-doped wafers. While for p-doped wafers our experimentally determined photovoltage is in agreement with previous reports, for n-doped wafers the observed values are lower than expected.

  18. Termination dependence of surface stacking at 4H-SiC(0001)-1×1 : Density functional theory calculations

    Science.gov (United States)

    Hara, Hideyuki; Morikawa, Yoshitada; Sano, Yasuhisa; Yamauchi, Kazuto

    2009-04-01

    We study the effect of adsorbates on the relative stability of hexagonal and cubic stacking sequences at the topmost SiC bilayers of 4H-SiC(0001)-1×1 surfaces using first-principles calculations. We investigate F-terminated, OH-terminated, H-terminated, and clean surfaces, and in all cases, the cubic structure is more stable than the hexagonal structure. The energy difference between the two structures, however, significantly depends on adsorbates and is largest on the clean surface while it is smallest on the H-terminated surface. Stabilization of the cubic structure at F-terminated and OH-terminated surfaces is in contradiction to a simple argument based on the electrostatic interaction and we attribute it to orbital hybridization between occupied states of adsorbates and unoccupied states of the substrate surface. The present results suggest a possible means of controlling step bunching and the SiC stacking sequence by surface adsorbates.

  19. Abrasive Wear of Laser Surface Hardened 9SiCr in Soils%激光硬化9SiCr表面土壤磨损研究

    Institute of Scientific and Technical Information of China (English)

    陈卓君; 张祖立

    2011-01-01

    Abrasive wear tests of laser treated 9SiCr blade were conducted using three kinds of abrasives ( loam soil, sand soil and clay soil). The parameters of laser treatment (e. g. laser power 1 200 W, scanning velocity 14 mm/s, laser power 1 500 W, scanning velocity 16 mm/s) were optimized to obtain the hard and wear resistant surface on 9SiCr blade. Wear resistances of laser treated 9SiCr blade in three kinds of soils were measured and compared. The wear resistance of laser hardened 9SiCr steel blade was 5 times as high as that of quenched 9SiCr steel blade. The main wear mechanism of laser hardened 9SiCr blade in soil was abrasive wear. By improving the hardness, the wear lifetime of laser hardened 9SiCr blade was prompted.%在壤土、沙土和黏土3种土壤中对激光处理的9SiCr材料进行磨损试验,考察了激光硬化工艺参数对9SiCr旋耕刀基体显微硬度的影响,获得9SiCr旋耕刀基体激光硬化处理的最佳工艺参数.结果表明:在激光功率为1 200 W、扫描速度为14 mm/s和激光功率1 500 W、扫描速度16 mm/s的条件下,磨损率较小.激光处理表面在3种土壤条件下进行了耐磨性比较,沙土对试件的磨损率影响最小.9SiCr经过激光处理其表面耐磨性比一般淬火表面的耐磨性提高约5倍.9Sicr表面磨损形式主要是磨粒磨损.激光处理9SiCr表面提高了表面硬化层的硬度,从而提高了材料的耐磨性,增加了9SiCr的使用寿命.

  20. One-dimensional diffusion of Sr atoms on Sr/Si(111)-3 × 2 reconstruction surface

    Science.gov (United States)

    Du, Wenhan; Yang, Jingjing

    2016-11-01

    The electronic and geometric structures of the Sr/Si(111)-3 × 2 surface were investigated by scanning tunnelling microscopy and scanning tunnelling spectroscopy. The honeycomb-chain (HCC) model may be used to describe the reconstruction structure of the Sr/Si(111)-3 × 2 surface. Furthermore, one-dimensional (1D) concerted motion of Sr atom chains on the Sr/Si(111)-3 × 2 surface was observed at room temperature. Three reasons contribute to this 1D self-diffusion: low metal coverage of the Sr/Si(111)-3 × 2 reconstruction surface, weak interaction between the Sr and Si substrate, and surface vacancies and thermal fluctuation energy at room temperature. From this study, the origin of the long-existing blurred low energy electron diffraction pattern of alkali-earth metal induced-Si(111)3 × 2 surface was clarified, and the self-diffusion of metal atoms at room temperature also explains the common phase transition phenomenon on these reconstructed surfaces.

  1. Surface acoustic wave resonators on a ZnO-on-Si layered medium

    Science.gov (United States)

    Martin, S. J.; Schwartz, S. S.; Gunshor, R. L.; Pierret, R. F.

    1983-02-01

    The adaptation of surface acoustic wave resonator technology to a ZnO-on-Si layered medium is presented. Several distributed reflector schemes are considered, including shorted and isolated metallic strips, as well as grooves etched in the ZnO layer. In the case of etched groove reflectors, a first-order velocity perturbation arises due to the dispersive nature of the layered medium. Unique resonator design considerations result from the reflector array velocity and reflectivity characteristics. Transverse mode resonances are characterized and their effect on resonator response eliminated by a novel transducer design. A technique for temperature compensating the devices by use of a thermal SiO2 layer is discussed.

  2. One-dimensional silicon nanolines in the Si(001):H surface

    Science.gov (United States)

    Bianco, F.; Köster, S. A.; Longobardi, M.; Owen, J. H. G.; Bowler, D. R.; Renner, Ch.

    2013-12-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the monohydride Si(001):H surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  3. One-dimensional silicon nanolines in the Si(001):H surface

    Energy Technology Data Exchange (ETDEWEB)

    Bianco, F.; Köster, S. A.; Longobardi, M.; Owen, J. H.G.; Renner, Ch. [Department of Condensed Matter Physics, NCCR MaNEP, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4 (Switzerland); Bowler, D. R. [Department of Physics and Astronomy, University College London, Gower St, London WC1E 6BT, UK and London Centre for Nanotechnology, 17-19 Gordon St, London WC1H 0AH (United Kingdom)

    2013-12-04

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the monohydride Si(001):H surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  4. Surface passivation of phosphorus-diffused n(+)-type emitters by plasma-assisted atomic-layer deposited Al2O3

    NARCIS (Netherlands)

    Hoex, B.; M. C. M. van de Sanden,; Schmidt, J.; Brendel, R.; Kessels, W. M. M.

    2012-01-01

    In recent years Al2O3 has received tremendous interest in the photovoltaic community for the application as surface passivation layer for crystalline silicon. Especially p-type c-Si surfaces are very effectively passivated by Al2O3, including p-type emitters, due to the high fixed negative charge in

  5. Surface characteristics of Ti-6Al-4V alloy by EDM with Cu-SiC composite electrode

    Science.gov (United States)

    Li, L.; Feng, L.; Bai, X.; Li, Z. Y.

    2016-12-01

    Ti-6Al-4V alloy is widely used in many industries due to its outstanding properties. However, it has poor machinability using conventional mechanical cutting process. Electrical discharge machining is an alternative competitive process to machine titanium alloy by electrical erosion. This article studies the machining characteristics of Ti-6Al-4V with Cu-SiC composite electrode. Surface topography, subsurface microstructure, energy dispersive spectroscopy analysis, and micro-hardness have been analyzed. The machined surfaces show irregular compound structures, droplets of debris, shallow craters, and micro-pores. The surfaces processed by Cu-SiC electrode have fewer number of microcracks compared with that by Cu electrode. Continuous and uniform hardened layer can be achieved by Cu-SiC electrode. The hardened layer has significantly higher hardness than the bulk material because the new phases of TiC and TiSi2 were created on the surface.

  6. Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC

    Institute of Scientific and Technical Information of China (English)

    Wu Hailei; Sun Guosheng; Yang Ting; Yan Guoguo; Wang Lei; Zhao Wanshun; Liu Xingfang; Zeng Yiping; Wen Jialiang

    2011-01-01

    A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and postimplantation annealing in a low pressure CVD reactor.The Al depth profile was almost box shaped with a height of 1 × 1019cm-3 and a depth of 550 nm.Three different annealing processes were developed to protect the wafer surface.Variations in RMS roughness have been measured and compared with each other.The implanted SiC,annealed with a carbon cap,maintains a high-quality surface with an RMS roughness as low as 3.8 nm.Macrosteps and terraces were found in the SiC surface,which annealed by the other two processes (protect in Ar/protect with SiC capped wafer in Ar).The RMS roughness is 12.2 nm and 6.6 nm,respectively.

  7. Systematic STM and LEED investigation of the Si/Ag(110) surface.

    Science.gov (United States)

    Colonna, S; Serrano, G; Gori, P; Cricenti, A; Ronci, F

    2013-08-07

    Interest in the Si/Ag(110) system, which forms highly ordered linear nanostructures coined 'silicon nanoribbons', was recently boosted by the claim that such nanoribbons may be formed by silicon atoms arranged in a 2D honeycomb structure as in graphene, i.e. silicene. Despite such a revived interest, many discrepancies still exist in the recently reported results. This paper reports on a systematic investigation by scanning tunneling microscopy and low-energy electron diffraction of the Si/Ag(110) system as a function of the amount of deposited silicon and the deposition temperature. This reveals a complex interplay between these two factors, resulting in a rich array of possible self-assembled nanostructures and surface reconstructions. Several novel findings and clarification of the contradictory results reported in the literature are discussed in this work. In particular, the deposition temperature is demonstrated to be a key parameter to control the width of the Si nanoribbons produced. Recently, massive linear nanostructures were reported to be 'multilayer silicene', forming once the deposited silicon amount exceeds full coverage. However, we show that such nanostructures are also observed at low silicon coverage, demonstrating that their formation is exclusively determined by a deposition temperature higher than 460 K. On the other hand, for Si amounts higher than one monolayer the surface presents a novel c(8 × 4) reconstruction, which is responsible for the ×4 periodicity detected by LEED measurements, previously attributed to the 1.6 nm-wide nanoribbons overlayer or to 'multilayer silicene'. Finally, the large collection of acquired data also allowed us to single out image artifacts that may explain the contradictory results appearing in previous papers.

  8. Influence of diamond wheel grinding process on surface micro-topography and properties of SiO2/SiO2 composite

    Science.gov (United States)

    Cao, Xiaoyan; Lin, Bin; Wang, Yan; Wang, Shaolei

    2014-02-01

    According to anisotropic and inhomogeneous structure of fiber-reinforced ceramic matrix composites (FRCMC), it is difficult to control the surface quality with the traditional method used in metal material. The present paper studies the influence of diamond wheel grinding process on surface micro-topography and properties of SiO2/SiO2 composite. The research is based on some new discovery that the material enhanced fiber orientations play a key role in micro-topography of FRCMC grinding surface. Through a series of experiments, we investigate the relationship between grinding process and the quality of composites surface. We also analyze characteristics of the material surface topography height, wave distribution and surface support properties in details. This paper employs the orthogonal design to optimize grinding process parameters and also successfully models a critical condition to modify the surface characteristics. The results show that speed of grinding wheel has the greatest influence on height and surface support properties, the next is grain mesh size and depth of cut. The grain mesh size is the key factor for surface micro-topography modification. Compared to the surface with woven texture, the modified surface has better symmetrical characteristic. The research obtained will be an important technical support on improving the processing quality of FRCMC.

  9. A computational study on the adsorption configurations and reactions of SiH{sub x}(x = 1-4) on clean and H-covered Si(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Le, Thong N-M [Molecular Science and Nano-Materials Laboratory, Institute for Computational Science and Technology, Quang Trung Software Park, Dist. 12, Ho Chi Minh City (Viet Nam); Raghunath, P. [Center for Interdisciplinary Molecular Science, Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan (China); Huynh, Lam K., E-mail: lamhuynh.us@gmail.com [Department of Applied Chemistry, School of Biotechnology,International University, VNU-HCMC, Quarter 6, Linh Trung, Thu Duc District, Ho Chi Minh City (Viet Nam); Lin, M.C., E-mail: chemmcl@emory.edu [Center for Interdisciplinary Molecular Science, Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2016-11-30

    Highlights: • Possible adsorption configurations of all adsorbates on Si(100) surface are systematically explored. • The mechanisms leading to the formation of silicon adatoms on the surface are proposed. • The barriers for hydrogen abstractions from the surface are negligible comparing to the barriers for the hydrogen migrations. • The barriers for hydrogen abstractions from the adsorbed speices are negligible comparing to the barriers for the decompositions. - Abstract: Possible adsorption configurations of H and SiH{sub x} (x = 1 − 4) on clean and H-covered Si(100) surfaces are determined by using spin-polarized DFT calculations. The results show that, on the clean surface, the gas-phase hydrogen atom and SiH{sub 3} radicals effectively adsorb on the top sites, while SiH and SiH{sub 2} prefer the bridge sites of the first layer. Another possibility for SiH is to reside on the hollow sites with a triple-bond configuration. For a partially H-coverd Si(100) surface, the mechanism is similar but with higher adsorption energies in most cases. This suggests that the surface species become more stable in the presence of surface hydrogens. The minimum energy paths for the adsorption/migration and reactions of H/SiH{sub x} species on the surfaces are explored using the climbing image-nudged elastic band method. The competitive surface processes for Si thin-film formation from SiH{sub x} precursors are also predicted. The study reveals that the migration of hydrogen adatom is unimportant with respect to leaving open surface sites because of its high barriers (>29.0 kcal/mol). Alternatively, the abstraction of hydrogen adatoms by H/SiH{sub x} radicals is more favorable. Moreover, the removal of hydrogen atoms from adsorbed SiH{sub x}, an essential step for forming Si layers, is dominated by abstraction rather than the decomposition processes.

  10. Nano-SiO2表面处理及原位聚合法制备PI/Nano-SiO2杂化膜%Surface Modification of Nano-SiO2 and Preparation of PI/Nano-SiO2 Hybrid Films by In-Situ Polymerization

    Institute of Scientific and Technical Information of China (English)

    朱亚辉; 许馨文; 陈汉森; 左晓兵

    2011-01-01

    对Nano-SiO2进行两次表面处理,然后进行原位聚合制备聚酰胺酸/Nano-SiO2悬浮液,涂膜并热亚胺化得到PI/Nano-SiO2杂化膜.对Nano-SiO2的表面处理效果进行评价,对聚酰胺酸/Nano-SiO2悬浮液的稳定性、PI/Nano-SiO2杂化膜的性能进行测试.结果表明:Nano-SiO2的二次表面处理均为化学键合;聚酰胺酸/Nano-SiO2悬浮液稳定时间达到60 d,并获得了性能优异的PI/Nano-SiO2杂化膜.%Nano-SiO2 was surface treated twice, then polyamide acid/nano-SiO2 suspension was prepared using in-situ polymerization, finally, the thermal imidization was used to get PI/nano-SiO2 hybrid films. The effect of surface treated modification of nano-SiO2 was evaluated. The stability of polyamide acid/nano-SiO2 suspension and the performance of PI/nano-SiO2 hybrid films were investigated. The results showed: all the twice surface modifications of nano-SiO2 were chemical bond; The stabilization time of polyamide acid/nano-SiO2 suspension reached to 60 days and the PI/nano-SiO2 hybrid films with excellent performances were acquired.

  11. Effect of nano-Si3N4 surface treatment on the tribological performance of epoxy composite

    Directory of Open Access Journals (Sweden)

    2010-03-01

    Full Text Available To overcome the disadvantages generated by the loose nano-partilce agglomerates dispersed in polymer composites, a chemical grafting method was applied to modify nano-Si3N4 by covalently bonding glycidyl methacrylate (GMA onto the particles. The tribological behavior of the epoxy composite filled with nano-Si3N4 or GMA treated Si3N4 (Si3N4-g-PGMA was studied using a ring-on-block wear tester under dry sliding, and the worn surface of the filled epoxy composite and the surface roughness of the composites after the sliding wear test were investigated by SEM (scanning electron microscopy and AFM (atomic force microscopy, respectively. In comparison to the composites filled with untreated nano-Si3N4 particles, the composites with the grafted Sinano-3N4 exhibit improved sliding wear resistance and reduced friction coefficient owing to the chemical bonding at the filler/matrix interface.

  12. Metal-like Band Structures of Ultrathin Si {111} and {112} Surface Layers Revealed through Density Functional Theory Calculations.

    Science.gov (United States)

    Tan, Chih-Shan; Huang, Michael H

    2017-07-11

    Density functional theory calculations have been performed on Si (100), (110), (111), and (112) planes with tunable number of planes for evaluation of their band structures and density of states profiles. The purpose is to see whether silicon can exhibit facet-dependent properties derived from the presence of a thin surface layer having different band structures. No changes have been observed for single to multiple layers of Si (100) and (110) planes with a consistent band gap between the valence band and the conduction band. However, for 1, 2, 4, and 5 Si (111) and (112) planes, metal-like band structures were obtained with continuous density of states going from the valence band to the conduction band. For 3, 6, and more Si (111) planes, as well as 3 and 6 Si (112) planes, the same band structure as that seen for Si (100) and (110) planes has been obtained. Thus, beyond a layer thickness of five Si (111) planes at ≈1.6 nm, normal semiconductor behavior can be expected. The emergence of metal-like band structures for the Si (111) and (112) planes are related to variation in Si-Si bond length and bond distortion plus 3s and 3p orbital electron contributions in the band structure. This work predicts possession of facet-dependent electrical properties of silicon with consequences in FinFET transistor design. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. New bonding configuration on Si(111) and Ge(111) surfaces induced by the adsorption of alkali metals

    DEFF Research Database (Denmark)

    Lottermoser, L.; Landemark, E.; Smilgies, D.M.;

    1998-01-01

    The structure of the (3×1) reconstructions of the Si(111) and Ge(111) surfaces induced by adsorption of alkali metals has been determined on the basis of surface x-ray diffraction and low-energy electron diffraction measurements and density functional theory. The (3×1) surface results primarily f...... from the substrate reconstruction and shows a new bonding configuration consisting of consecutive fivefold and sixfold Si (Ge) rings in 〈11̅ 0〉 projection separated by channels containing the alkali metal atoms. © 1998 The American Physical Society......The structure of the (3×1) reconstructions of the Si(111) and Ge(111) surfaces induced by adsorption of alkali metals has been determined on the basis of surface x-ray diffraction and low-energy electron diffraction measurements and density functional theory. The (3×1) surface results primarily...

  14. Surface modification of oxide layer on Si using highly charged ions

    Energy Technology Data Exchange (ETDEWEB)

    Sakurai, M., E-mail: msakurai@kobe-u.ac.jp [Department of Physics, Kobe University, Rokkodai, Nada-ku, Kobe 657-8501 (Japan); Liu, S.; Sakai, S. [Department of Physics, Kobe University, Rokkodai, Nada-ku, Kobe 657-8501 (Japan); Ohtani, S. [Institute for Laser Science, University of Electro-Communications, Chofu, Tokyo 182-8585 (Japan); Terui, T. [National Institute of Information and Communications Technology, Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Sakaue, H.A. [National Institute for Fusion Science, Oroshi-cho, Toki 509-5292 (Japan)

    2013-11-15

    Surface modification using highly charged ions is presented. The surface of a Si wafer which is covered with a native oxide layer is used as a sample. The sample was irradiated with Ar{sup 11+} ions at a fluence of 10{sup 13}–10{sup 14}/cm{sup 2}. The Ar{sup 11+} ions were obtained from an electron beam ion source (Kobe EBIS). The surface was investigated using secondary electron microscopy, X-ray photoelectron spectroscopy and high-resolution electron energy loss spectroscopy. The obtained results suggest that the native oxide layer is sputtered by the irradiation of Ar{sup 11+} ions and that the structural modification makes the density of the oxide layer lower and the electric conductivity higher.

  15. Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping

    Science.gov (United States)

    Oh, Seung-Hoon; Ma, Jin-Won; Bae, Jung Min; Kang, Yu-seon; Ahn, Jae-Pyung; Kang, Hang-Kyu; Chae, Jimin; Suh, Dongchan; Song, Woobin; Kim, Sunjung; Cho, Mann-Ho

    2017-10-01

    We investigated the conduction characteristics of plasma-doped Si nanowires (NWs) after various rapid thermal annealing (RTA) times. The plasma doping (PD) process developed a highly-deposited B layer at the NW surface. RTA process controls electrical conductivity by mediating the dopant diffusion from the surface layer. The surface chemical and substitutional states of the B plasma-doped Si NWs were analyzed by x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. To elucidate the detailed structure of the NWs, we analyzed the change in the optical phonon mode caused by the incorporated B atoms. For this purpose, we examined Fano resonance by the investigation of the asymmetry, line-width, and phonon wavenumber in Raman spectra. The changes in symmetry level of the Raman peak, phonon lifetime, and internal strain were closely related to the number of electrically activated borons, which was drastically increased with RTA time. The change in electrical and optical characterizations related to the doping characteristics of the NWs was investigated using a 4-point probe and terahertz time-domain spectroscopy (THz-TDS). The resistivity of the NWs was 3000 times lower after the annealing process compared to that before the annealing process, which is well consistent with the optical conductivity data. The data provide the potential utility of PD in conformal doping for three-dimensional nanodevices.

  16. TEOS-based SiO{sub 2} chemical vapor deposition: Reaction kinetics and related surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Bartram, M.E.; Moffat, H.K.

    1995-11-01

    We have developed a comprehensive understanding of thermal TEOS (tetracthylorthosificate, Si(OCH{sub 2}CH{sub 3}){sub 4}) surface chemistry at CVD (chemical vapor deposition) temperatures and pressures. This was accomplished by examining how TEOS reaction rate are influenced by factors critical to the heterogeneous reaction. This includes determining the TEOS pressure dependence, testing if reaction by-products inhibit TEOS decomposition, identifying reaction sites on the surface, and establishing the reaction sites coverage dependencies. We evaluated the pressure dependencies and by-product inhibition with GCMS. The experiments in a cold-wall research reactor revealed that the TEOS surface reaction at 1000K (1) was first-order with respect to TEOS pressure (0.10 to 1.50Torr) and (2) was not inhibited by surface reaction by-products (ethylene, ethanol, and water). Reactivities of surface sites and their coverage dependencies were compared with FTIR. Our experiments demonstrated that two-membered siloxane ((Si-O){sub 2}) rings on the SiO{sub 2} surface were consumed almost instantaneously when exposed to TEOS. Our FTIR experiments also revealed that TEOS decomposition was zero-order with respect to coverages of hydroxyl groups and (by indirect evidence) three-membered siloxane ((Si-O){sub 3}) rings. This type of site-independent reactivity is consistent with TEOS reacting with hydroxyl groups and (Si-O){sub 3} rings via a common rate-determining step at 1000K. With respect to deposition uniformity, our results predict that deposition rates will be insensitive to the relative coverages of (Si-O){sub 3} rings and hydroxyls on SiO{sub 2} as well as the re-adsorbed by-products of the surface reaction. Therefore, it is likely that nonuniform SiO{sub 2} depositions from TEOS reactions are due to depletion of TEOS in the gas-phase and/or thermal gradients.

  17. Superhydrophobic coatings fabricated with polytetrafluoroethylene and SiO{sub 2} nanoparticles by spraying process on carbon steel surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haibin [Department of Chemistry and Soft Matter Research Center, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Chen, Eryu, E-mail: fishfly80@163.com [Hangzhou NCO Academy of CAPF, Hangzhou, Zhejiang 310023 (China); Jia, Xianbu [Hangzhou NCO Academy of CAPF, Hangzhou, Zhejiang 310023 (China); Liang, Lijun [Department of Chemistry and Soft Matter Research Center, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Wang, Qi, E-mail: qiwang@zju.edu.cn [Department of Chemistry and Soft Matter Research Center, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

    2015-09-15

    Graphical abstract: - Highlights: • The SiO{sub 2} and PTFE NP-filled coatings exhibit excellent superhydrophobicity. • PTFE-filled coatings show denser structures and better liquid resistance than SiO{sub 2}. • Air pocket of Wentzel model explains the difference in the superhydrophobicity. - Abstract: Superhydrophobicity is extensively investigated because of the numerous methods developed for water-repellant interface fabrication. Many suitable functional materials for the production of superhydrophobic surfaces on various substrates are still being explored. In this study, inorganic SiO{sub 2} and organic polytetrafluoroethylene (PTFE) nanoparticles (NPs) are used for a comparative study on the performance of superhydrophobic coating on carbon steel surfaces. The NPs are added to PTFE coating emulsions by physical blending to form coating mixtures. Raw SiO{sub 2} NPs are then hydrophobized using KH-570 and validated by Fourier transform-infrared spectroscopy (FT-IR) and Dynamic Laser Scattering (DLS) grain size analyses. The microstructures of the surfaces are characterized by contact angle (CA) measurements and field emission-scanning electron microscope (FE-SEM) images. The prepared surfaces are subjected to adhesion, hardness, water resistance, and acid/alkali erosion tests. Hydrophobized SiO{sub 2}-filled coating surfaces are found to have better uniformity than raw SiO{sub 2} regardless of their similar maximum static contact angles (SCAs) about 150°. A SCA of 163.1° is obtained on the PTFE NP-filled coating surfaces that have a considerably denser structure than SiO{sub 2}. Thermogravimetric (TG) and differential scanning calorimetry (DSC) analyses reveal that all fabricated surfaces have good thermal stability and tolerate temperatures up to 550 °C. The PTFE NP-filled coating surfaces also exhibit excellent water and acid resistance. A possible mechanism concerning the amount of trapped air is proposed in relation to practical superhydrophobic

  18. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    Science.gov (United States)

    Fatima, Can Oguz, Ismail; ćakır, Deniz; Hossain, Sehtab; Mohottige, Rasika; Gulseren, Oguz; Oncel, Nuri

    2016-09-01

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  19. Highly Efficient Excitation of Surface Plasmons Using a Si Gable Tip

    CERN Document Server

    Dewanjee, Arnab; Aitchison, J Stewart; Mojahedi, Mo

    2016-01-01

    We propose a novel technique to efficiently excite a surface plasmon polariton (SPP) mode at a gold-glass interface by using an engineered high index (silicon) gabled tip at the telecom wavelengths. The proposed structure can theoretically convert 49% of the input optical power to a SPP mode. Also we experimentally validate the effective high efficiency coupling by the gabled tip. The device is compact, it will facilitate the on-chip excitation of the SPP, its fabrication is compatible with the standard Si fabrication processes, and as such, it is expected to be useful in the design of future integrated sensors.

  20. Surface Modification of SiC Nanoparticles with PMMA by Low Temperature Plasma

    Institute of Scientific and Technical Information of China (English)

    WEI Gang; ZHONG Shaofeng; MENG Yuedong; SHU Xingsheng

    2007-01-01

    An investigation into Poly (methyl methacrylate) (PMMA) grafted onto nano-SiC particles is reported in this study. In our experiment, the grafting polymerization reaction is induced by radio frequency (RF) discharge of N2 plasma treatment of the nanosized powder. FTIR (Fourier transform infrared spectrum), XPS (X-ray photoelectron spectroscopy) and TGA (Thermogravimetric analysis) results reveal that PMMA is grafted onto the surface of silicon carbide powder, and the crystal structure of the silicon carbide powder observed with XRD (X-ray diffraction) spectra is unchanged before and after the plasma graft polymerization.

  1. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bing-Qing; LIU Feng-Zhen; ZHANG Qun-Fang; XU Ying; ZHOU Yu-Qin; LIU Jin-Long; ZHU Mei-Fang

    2006-01-01

    The p-type microcrystalline silicon (fj,c-Si) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the pc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μcSi:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08 W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15 nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.

  2. Si/PEDOT:PSS Hybrid Solar Cells with Advanced Antireflection and Back Surface Field Designs

    Science.gov (United States)

    Sun, Yiling; Yang, Zhenhai; Gao, Pingqi; He, Jian; Yang, Xi; Sheng, Jiang; Wu, Sudong; Xiang, Yong; Ye, Jichun

    2016-08-01

    Molybdenum oxide (MoO3) is one of most suitable antireflection (AR) layers for silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (Si/PEDOT:PSS) hybrid solar cells due to its well-matched refractive index (2.1). A simulation model was employed to predict the optical characteristics of Si/PEDOT:PSS hybrid solar cells with the MoO3 layers as antireflection coatings (ARCs), as well as to analyze the loss in current density. By adding an optimum thickness of a 34-nm-thick ARC of MoO3 on the front side and an effective rear back surface field (BSF) of phosphorus-diffused N + layer at the rear side, the hybrid cells displayed higher light response in the visible and near infrared regions, boosting a short-circuit current density ( J sc) up to 28.7 mA/cm2. The average power conversion efficiency (PCE) of the Si/PEDOT:PSS hybrid solar cells was thus increased up to 11.90 %, greater than the value of 9.23 % for the reference devices.

  3. Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers

    Science.gov (United States)

    Goto, Tetsuya; Kuroda, Rihito; Akagawa, Naoya; Suwa, Tomoyuki; Teramoto, Akinobu; Li, Xiang; Obara, Toshiki; Kimoto, Daiki; Sugawa, Shigetoshi; Ohmi, Tadahiro; Kamata, Yutaka; Kumagai, Yuki; Shibusawa, Katsuhiko

    2015-04-01

    By introducing high-purity and low-temperature Ar annealing at 850 °C, atomically flat Si surfaces of silicon-on-insulator (SOI) and shallow-trench-isolation (STI)-patterned wafers were obtained. In the case of the STI-patterned wafer, this low-temperature annealing and subsequent radical oxidation to form a gate oxide film were introduced into the complementary metal oxide semiconductor (CMOS) process with 0.22 µm technology. As a result, a test array circuit for evaluating the electrical characteristics of a very large number (>260,000) of metal oxide semiconductor field effect transistors (MOSFETs) having an atomically flat gate insulator/Si interface was successfully fabricated on a 200-mm-diameter wafer. By evaluating 262,144 nMOSFETs, it was found that not only the gate oxide reliability was improved, but also the noise amplitude of the gate-source voltage related to the random telegraph noise (RTN) was reduced owing to the introduction of the atomically flat gate insulator/Si interface.

  4. Fabrication of micro-nano composite textured surface for slurry sawn mc-Si wafers cell

    Science.gov (United States)

    Niu, Y. C.; liu, Z.; Ren, X. K.; Liu, X. J.; Liu, H. T.; Jiang, Y. S.

    2017-01-01

    In order to enhance the PV efficiency of the cell made from slurry sawn (SS) mc-Si wafers, using a Ag-assisted electroless etching (AgNO3+HF+H2O2) combined with an auxiliary etching (HF+HNO3) the RENA textured SS mc-Si wafers (called as RENA wafers) were further textured (nano pores were formed on the original micro pits) to change into micro-nano composite textured wafers (called as MN-RENA wafers). The solar cells made from the MN-RENA wafers had a better PV efficiency than that of RENA wafers. This is mainly attributed to the higher light-trapping of the micro-nano composite texture. The nano size texture enhanced the light-trap of wafer surface and, at the same time, the micro size texture maintained the light-trap uniformity of different gains of RENA wafer. However, there still exist a potential for optimization, such as, the SiNx passviation coating should be improved to be deposited more uniformly in order to passivate the bottom of pits better and to reduce the reflectance of the obtuse tips of pits.

  5. p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

    Science.gov (United States)

    Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

    2015-08-05

    Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

  6. Influence of Group-III-metal and Ag adsorption on the Ge growth on Si(111) and its vicinal surface

    Energy Technology Data Exchange (ETDEWEB)

    Speckmann, Moritz

    2011-12-15

    In the framework of this thesis the surfactant-mediated heteroepitaxial growth of Ge on different Si surfaces has been investigated by means of low-energy electron microscopy, low-energy electron diffraction, spot-profile analysing low-energy electron diffraction, X-ray standing waves, grazing-incidence X-ray diffraction, x-ray photoemission electron microscopy, X-ray photoemission spectroscopy, scanning tunneling microscopy, scanning electron microscopy, transmission electron microscopy, and density functional theory calculations. As surfactants gallium, indium, and silver were used. The adsorption of Ga or In on the intrinsically faceted Si(112) surface leads to a smoothing of the surface and the formation of (N x 1) reconstructions, where a mixture of building blocks of different sizes is always present. For both adsorbates the overall periodicity on the surface is strongly dependent on the deposition temperature and the coverage. For the experimental conditions chosen here, the periodicities are in the range of 5.2{<=}N{<=}6.5 and 3.4{<=}N{<=}3.7 for Ga and In, respectively. The (N x 1) unit cells of Ga/Si(112) and In/Si(112) are found to consist of adsorbate atoms on terrace and step-edge sites, forming two atomic chains along the [110] direction. In the Ga-induced structures two Ga-vacancies per unit cell (one in the terrace and one in the step-edge site) are found and a continuous vacancy line on the surface is formed. In the In/Si(112) structure only one vacancy per unit cell in the step-edge site exists and, thus, a continuous adsorbate chain on the terrace sites is present. The adsorption of Ga or In on Si(112) strongly influences the subsequent Ge growth. Ge deposition on the Ga-terminated Si(112) surface leads to the formation of Ge nanowires, which are elongated along the Ga chains and reach lengths of up to 2000 nm for a growth temperature of 600 C. On In-covered Si(112), both small dash-like Ge islands and triangularly shaped islands are found, where

  7. Surface cleaning and etching of 4H-SiC(0001) using high-density atmospheric pressure hydrogen plasma.

    Science.gov (United States)

    Watanabe, Heiji; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Hosoi, Takuji; Shimura, Takayoshi; Yasutake, Kiyoshi

    2011-04-01

    We propose low-damage and high-efficiency treatment of 4H-SiC(0001) surfaces using atmospheric pressure (AP) hydrogen plasma. Hydrogen radicals generated by the AP plasma was found to effectively remove damaged layers on SiC wafers and improve surface morphology by isotropic etching. Localized high-density AP plasma generated with a cylindrical rotary electrode provides a high etching rate of 1.6 microm/min and yields smooth morphology by eliminating surface corrugation and scratches introduced by wafer slicing and lapping procedures. However, high-rate etching with localized plasma was found to cause an inhomogeneous etching profile depending on the plasma density and re-growth of the poly-Si layer at the downstream due to the decomposition of the vaporized SiH(x) products. On the other hand, for the purpose of achieving moderate etching and ideal cleaning of SiC surfaces, we demonstrated the application of a novel porous carbon electrode to form delocalized and uniform AP plasma over 4 inches in diameter. We obtained a reasonably moderate etching rate of 0.1 microm/min and succeeded in fabricating damage-free SiC surfaces.

  8. First-principles study of electronic properties and stability of Nb5SiB2 (001) surface

    Institute of Scientific and Technical Information of China (English)

    Xu Yu-Jiang-Zi; Shang Jia-Xiang; Wang Fu-He

    2011-01-01

    The density functional calculations are performed to study the electronic structure and stability of Nb5SiB2 (001) surface with different terminations. The calculated cleavage energies along the (001) planes in Nb5SiB2 are 5.015 J ? m-2 and 6.593 J ? m-2 with the break of Nb-Si and Nb-NbB bonds, respectively. There exists a close correlation between the surface relaxation including surface ripple and the cleavage energy: the larger the cleavage energy, the larger the surface relaxation. Moreover, the surface stability of the Nb5SiB2 (001) with different terminations has been investigated by the chemical potential phase diagram. From a thermodynamics point of view, the four terminations can be stabilized under different conditions. In chemical potential space, NbB (Nb) and Nb (Si) terminations are just stable in a small area, whereas Si (Nb) and Nb (NbB) terminations are stable in a large area (the letters in brackets represent the subsurface atoms).

  9. Excitonic effects in the nonlinear optical response of a Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Stamova, Maria; Rebentrost, Frank [Max-Planck-Institut fuer Quantenoptik, 85748 Garching (Germany)

    2010-08-15

    We discuss methods to calculate the linear and nonlinear optical spectra for cyclic cluster models of an ideal Si(111) surface. The cluster approach offers the possibility to implement the excitonic effects due to the Coulomb interaction between electron and hole in a relatively straight-forward way. In order to appproximate a situation resembling a surface we use clusters with several hundreds of Si atoms. The electronic structure is obtained from a tight-binding parametrization of the hamiltonian. A time-dependent density operator formalism is used to calculate the response functions S({tau}) and S({tau}{sub 1},{tau}{sub 2}) for the optical polarization, which also directly describe the response to ultrashort pulses. Their Fourier transforms are the frequency-dependent optical susceptibilities {chi}{sup (1)}(-{omega};{omega}) and {chi}{sup (2)} (-{omega}{sub 1}-{omega}{sub 2};{omega}{sub 1},{omega}{sub 2}) for second-harmonic ({omega}{sub 1} ={omega}{sub 2}) or sum-frequency generation from surfaces. The excitonic Coulomb interaction is treated in the time-dependent Hartree-Fock approximation, leading to large sets of differential equations that are integrated explicitly. The results on the linear susceptibility are in accord with earlier findings on the excitonic origin of the relative intensities of the E{sub 1} and E{sub 2} peaks near 3.4 and 4.3 eV. We present new results on excitonic effects in the nonlinear spectra and investigate in particular the surface-related peaks near 2{Dirac_h}{omega}= 1.3-1.5 and 2.4 eV that govern the strong enhancement observed in SHG of clean silicon surfaces. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Formation of Si{sup 1+} in the early stages of the oxidation of the Si[001] 2 × 1 surface

    Energy Technology Data Exchange (ETDEWEB)

    Herrera-Gomez, Alberto, E-mail: aherrerag@cinvestav.mx [CINVESTAV-Unidad Queretaro, Queretaro 76230 (Mexico); Aguirre-Tostado, Francisco-Servando [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600 (Mexico); Pianetta, Piero [SLAC National Accelerator Center, Menlo Park, California 94025 (United States)

    2016-03-15

    The early stages of the oxidation of the Si[001] 2 × 1 surface were studied with synchrotron radiation photoelectron spectroscopy. The analysis was based on the block approach, which is a refinement of spectra-subtraction that accounts for changes on the background signal and for band-bending shifts. By this method, it was possible to robustly show that the formation of Si{sup 1+} is due to oxygen bonding to the upper dimer atoms. Our results contrast with ab initio calculation, which indicates that the most favorable bonding site is the back-bond of the down-dimer.

  11. Low energy ion beam modification of Cu/Ni/Si(100) surface

    Indian Academy of Sciences (India)

    S K Parida; V R Rmedicherla; D K Mishra; S Choudhary; V Solanki; Shikha Varma

    2014-12-01

    Cu/Ni bilayer has been prepared by thermal evaporation of pure Cu and Ni metals onto Si(100) surface in high vacuum; it was sputtered using argon ion beam in ultra-high vacuum. The ion beam-induced surface and interface modification was investigated using X-ray photoelectron spectroscopy and atomic force microscopy techniques. The deposited sample exhibits the formation of CuO nano-structures of size 40 nm on Cu surface and after sputtering with argon ion beam at a fluence of 5 × 1015 ions/cm2, the surface exhibits a mound structure with an average size of about 100 nm. Interestingly, with sputtering at higher fluence of 2.4 × 1016 ions/cm2, the surface exhibits broad pits of sizes ranging from 100 to 300 nm with an average depth of 10 nm. Bottom surface of these pits contains Ni atoms. The Cu 23/2 peak exhibits a shift of 0.3 eV towards high binding energy and also a large asymmetry of 0.11 after sputtering at high fluence compared with pure copper. These changes are attributed to Cu–Ni interactions at the interface.

  12. Quantitative characterization of the fracture surface of Si single crystals by confocal microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Y.B.; Hsia, K.J.; Lange, D.A. [Univ. of Illinois, Urbana, IL (United States)

    1995-12-01

    Experiments are conducted to study the dislocation nucleation conditions at the crack tip in {l_brace}110{r_brace}<110> oriented Si single crystals. Specimens with surface cracks are first statically loaded at elevated temperatures for a prolonged period of time to initiate and move dislocations away from the crack tip, then cooled down to room temperature and loaded to fracture to measure the fracture toughness. Fractographic analysis of the fracture surfaces is performed. Distinct wavy patterns on the fracture surface at the initial cleavage crack front are observed, which is attributed to the existence of local mixed mode 1/mode 3 stresses resulting from the inhomogeneous dislocation activity. Confocal microscopy is employed to quantify the fracture surface roughness. The results show that the increase of fracture toughness is directly associated with the increased area of the rough surface, which is characterized by the roughness number or the fractal dimension increment. The results also demonstrate that dislocation nucleation can occur only at discrete sites. The spacing between these dislocation nucleation sources is of the order of 1 {micro}m. A simple model is developed for the relationship between the fracture toughness and the surface roughness parameters, which is in good agreement with the experimental results.

  13. Improved Cycling Performance of a Si Nanoparticle Anode Utilizing Citric Acid as a Surface-Modifying Agent.

    Science.gov (United States)

    Nguyen, Cao Cuong; Seo, Daniel M; Chandrasiri, K W D K; Lucht, Brett L

    2017-09-19

    Citric acid and its analogues have been investigated as surface-modifying agents for Si nanoparticle anodes using electrochemical cycling, attenuated total reflectance infrared (ATR IR), and X-ray photoelectron spectroscopy (XPS). A Si nanoparticle anode prepared with citric acid (CA) has better capacity retention than one containing 1,2,3,4-butanetetracarboxylic acid (BA), but both electrodes outperform Si-PVDF. The Si-CA anode has an initial specific capacity of 3530 mA h/g and a first cycle efficiency of 82%. Surprisingly, the Si-CA electrode maintains a high specific capacity of ∼2200 mA h/g after 250 cycles, corresponding to 64% capacity retention, which is similar to the Si prepared with long-chain poly(acrylic acid) (PAA). On the contrary, the silicon electrode prepared with PVDF has a fast capacity fade and retains only 980 mA h/g after 50 cycles. The IR and XPS data show that the Si-CA electrode has an SEI composed primarily of lithium citrate during the first 50 cycles, resulting from the electrochemical reduction of citric acid. Only low concentrations of electrolyte reduction products are observed. The lithium citrate layer derived from CA stabilizes the silicon surface and suppresses electrolyte reduction, which likely contributes to the enhanced cycling performance of the Si nanoparticle anode.

  14. Influence of OH− Ion Concentration on the Surface Morphology of ZnO-SiO2 Nanostructure

    Directory of Open Access Journals (Sweden)

    Jessica Ven G. Tinio

    2015-01-01

    Full Text Available The influence of varying OH− ion concentration on the surface morphology of chemically deposited ZnO-SiO2 nanostructures on glass substrate was investigated. The morphological features, phase structure, and infrared characteristics were examined by scanning electron microscopy (SEM, X-ray diffraction (XRD, and Fourier transform infrared spectroscopy (FTIR, respectively. Results revealed that silica significantly changes the hexagonal morphology of bare ZnO rod to “pointed tips” when using low initial OH− precursor concentration. Increasing OH− ion concentration resulted in a “flower-like” formation of ZnO-SiO2 and a remarkable change from “pointed tips” to “hemispherical tips” at the top surface of the rods. The surface capping of SiO2 to ZnO leads to the formation of these “hemispherical tips.” The infrared spectroscopic analysis showed the characteristics peaks of ZnO and SiO2 as well as the Si-O-Zn band which confirms the formation of ZnO-SiO2. Phase analysis manifested that the formed ZnO-SiO2 is of wurtzite structure. Furthermore, a possible growth mechanism is proposed based on the obtained results.

  15. Self-assembly of conductive Cu nanowires on Si(111)'5 × 5 '-Cu surface.

    Science.gov (United States)

    Tsukanov, Dmitry A; Ryzhkova, Maria V; Gruznev, Dimitry V; Utas, Oleg A; Kotlyar, Vasily G; Zotov, Andrey V; Saranin, Alexander A

    2008-06-18

    Upon room-temperature deposition onto a Cu/Si(111)'5 × 5' surface in ultra-high vacuum, Cu atoms migrate over extended distances to become trapped at the step edges, where they form Cu nanowires (NWs). The formed NWs are 20-80 nm wide, 1-3 nm high and characterized by a resistivity of ∼8 µΩ cm. The surface conductance of the NW array is anisotropic, with the conductivity along the NWs being about three times greater than that in the perpendicular direction. Using a similar growth technique, not only the straight NWs but also other types of NW-based structures (e.g. nanorings) can be fabricated.

  16. Electrical conductivity of reconstructed Si(111) surface with sodium-doped C{sub 60} layers

    Energy Technology Data Exchange (ETDEWEB)

    Tsukanov, D. A., E-mail: tsukanov@iacp.dvo.ru; Saranin, A. A. [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); School of Natural Sciences, Far Eastern Federal University, Vladivostok 690950 (Russian Federation); Ryzhkova, M. V.; Borisenko, E. A. [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); Zotov, A. V. [Institute of Automation and Control Processes, FEB RAS, Vladivostok 690041 (Russian Federation); School of Natural Sciences, Far Eastern Federal University, Vladivostok 690950 (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600 (Russian Federation)

    2015-01-05

    Electrical conductance of sodium-doped C{sub 60} ultra-thin layers (1–6 monolayers) grown on the Na-adsorbed Si(111)√3 × √3-Au surface has been studied in situ by four-point probe technique, combined with low-energy electron diffraction observations. Evidence of conductance channel formation through the C{sub 60} ultrathin layer is demonstrated as a result of Na dosing of 3 and 6 monolayers thick C{sub 60} layers. The observed changes in surface conductivity can be attributed to the formation of fulleride-like NaC{sub 60} and Na{sub 2}C{sub 60} compound layers.

  17. Understanding the growth mechanism of graphene on Ge/Si(001) surfaces

    Science.gov (United States)

    Dabrowski, J.; Lippert, G.; Avila, J.; Baringhaus, J.; Colambo, I.; Dedkov, Yu S.; Herziger, F.; Lupina, G.; Maultzsch, J.; Schaffus, T.; Schroeder, T.; Kot, M.; Tegenkamp, C.; Vignaud, D.; Asensio, M.-C.

    2016-08-01

    The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C2H4) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene “molecules” nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.

  18. Surface-induced resistivity of CoSi sub 2 films and violations of Mathiessen's rule

    CERN Document Server

    Muñoz, R C; Kremer, G; Moraga, L

    2003-01-01

    We analysed the residual resistivity data for more than 40 films of CoSi sub 2 reported by different groups using the available quantum theories of size effects in metal films. We found that the predictions of the model of Trivedi and Ashcroft (1988 Phys. Rev. B 38 12298) of Tesanovic et al(1986 Phys. Rev. Lett. 57 2760), and of the mSXW theory (Munoz et al1999 J. Phys. Condens. Matter 11 L299) agree roughly with the data and with each other over the entire range of thickness 1 nm <= t <= 110 nm, although the rms roughness amplitude needed to best describe the residual resistivity data is somewhat different for each model. All three models predict surprisingly similar values for the film resistivity rho sub F and for the surface resistivity rho sub S arising from electron-surface scattering. All three models indicate that Mathiessen's rule is violated in thin CoSi sub 2 films, that is, rho sub F not = rho sub S + rho sub B , where rho sub B is the bulk resistivity. For 110 nm < t < 10 nm, the resi...

  19. Surface Behavior of Bioactive Glass of Si-Na-Ca-P System in Simulated Body Fluid

    Science.gov (United States)

    Ma, Jie; Chen, Chuanzhong; Wang, Diangang; Dang, Xing; Bao, Ruiliang; Yao, Liang

    Glass of the Si-Na-Ca-P system has been synthesized by normal melting and annealing technique. The obtained glass powders and annealed blocks were showed to be amorphous by X-ray diffraction (XRD). The thermal properties of glasses were analyzed by differential scanning calorimetry (DSC), it showed that the glass transformation temperature (Tg) was 556.3°C. The behavior of annealed glass discs in simulated body fluid solution (SBF) was studied in polyethylene containers at a constant temperature of 37°C for different time up to 14 days. The changes in the surface morphology and composition were observed by electronic probe microanalyzer (EPMA) associated with energy dispersive spectroscopy (EDS). Glass surface changed quickly as soon as immersion took place, and after longer soaking time, it showed different superimposed internal and external layers, which were identified as SiO2-rich and CaO-P2O5-rich layers, and on the external layer, spherical particles were also discovered.

  20. Fabrication of Surface Level Cu/SiCp Nanocomposites by Friction Stir Processing Route

    Directory of Open Access Journals (Sweden)

    Cartigueyen Srinivasan

    2015-01-01

    Full Text Available Friction stir processing (FSP technique has been successfully employed as low energy consumption route to prepare copper based surface level nanocomposites reinforced with nanosized silicon carbide particles (SiCp. The effect of FSP parameters such as tool rotational speed, processing speed, and tool tilt angle on microstructure and microhardness was investigated. Single pass FSP was performed based on Box-Behnken design at three factors in three levels. A cluster of blind holes 2 mm in diameter and 3 mm in depth was used as particulate deposition technique in order to reduce the agglomeration problem during composite fabrication. K-type thermocouples were used to measure temperature histories during FSP. The results suggest that the heat generation during FSP plays a significant role in deciding the microstructure and microhardness of the surface composites. Microstructural observations revealed a uniform dispersion of nanosized SiCp without any agglomeration problem and well bonded with copper matrix at different process parameter combinations. X-ray diffraction study shows that no intermetallic compound was produced after processing. The microhardness of nanocomposites was remarkably enhanced and about 95% more than that of copper matrix.

  1. Study of surface exfoliation on 6H-SiC induced by H2+ implantation

    Science.gov (United States)

    Zhang, L.; Li, B. S.

    2017-03-01

    The effect of lattice damage generated by the H2+-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. 6H-SiC wafers were implanted with 134 keV H2+ ions to ion fluences from 1.5×1016 to 5×1016 H2+ cm-2 and subsequently annealed at temperatures from 973 K to 1373 K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only after 1373 K annealing for 15 min, blisters and exfoliation occur on the H2+-implanted sample surface. With increasing the implantation fluences from 1.5×1016 to 3.75×1016 H2+ cm-2, the exfoliation mean size decreases, while the exfoliation density increases. For the highest fluence of 5×1016 H2+ cm-2, seldom exfoliations occur on the sample surface. Microstructure analysis shows that exfoliation efficiency is largely controlled by the H2+-implantation-induced lattice damage. The depth of the microcrack is related to the implantation fluence. The effect of implantation fluence on dislocation loops, platelet nucleation and growth is investigated.

  2. Optical properties of organically functionalized silicon surfaces: Uracil-like nucleobases on Si(001)

    Science.gov (United States)

    Molteni, Elena; Cappellini, Giancarlo; Onida, Giovanni; Fratesi, Guido

    2017-02-01

    We predict UV reflectance anisotropy spectra (RAS) of the organically functionalized silicon (001) surface covered by pyrimidinic uracil-like nucleobases. First-principles results based on density functional theory show characteristic spectral features appearing in the UV range between 3 and 7 eV, besides the expected quench in the well-known two-minima RAS signal of clean Si(001). Nucleobase adsorption in the energetically favored "dimer bridge" configuration gives rise to a characteristic RAS line shape, common to thymine, uracil, and 5-fluorouracil. We trace back the origin of such spectral features by singling out RAS structures induced by relaxation and passivation effects on the Si surface, and those directly associated with molecular excitations. The former turn out to be the same for the three nucleobases, and are totally unaffected by molecular tilting. The sign and position of the latter RAS peaks at higher energy exhibit a moderate nucleobase dependence, and can be fully rationalized in terms of the molecular orbitals involved. The present theoretical results call for a RAS experimental study in the UV region extending up to ≃6 -7 eV.

  3. Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells

    Science.gov (United States)

    Chen, Tao; Köhler, Florian; Heidt, Anna; Carius, Reinhard; Finger, Friedhelm

    2014-01-01

    Al-doped p-type microcrystalline silicon carbide (µc-SiC:H) thin films were deposited by hot-wire chemical vapor deposition at substrate temperatures below 400 °C. Monomethylsilane (MMS) highly diluted in hydrogen was used as the SiC source in favor of SiC deposition in a stoichiometric form. Aluminum (Al) introduced from trimethylaluminum (TMAl) was used as the p-type dopant. The material property of Al-doped p-type µc-SiC:H thin films deposited with different deposition pressure and filament temperature was investigated in this work. Such µc-SiC:H material is of mainly cubic (3C) SiC polytype. For certain conditions, like high deposition pressure and high filament temperature, additional hexagonal phase and/or stacking faults can be observed. P-type µc-SiC:H thin films with optical band gap E04 ranging from 2.0 to 2.8 eV and dark conductivity ranging from 10-5 to 0.1 S/cm can be prepared. Such transparent and conductive p-type µc-SiC:H thin films were applied in thin film silicon solar cells as the window layer, resulting in an improved quantum efficiency at wavelengths below 480 nm.

  4. Self-assembled C60 layers on incommensurate Cu/Si(111)'pseudo-5 × 5' surface

    Science.gov (United States)

    Olyanich, D. A.; Mararov, V. V.; Utas, T. V.; Zotov, A. V.; Saranin, A. A.

    2015-12-01

    Self-assembled growth of C60 monolayers on the pristine and Ge-modified Cu/Si(111)'pseudo-5 × 5' surfaces was studied using scanning tunneling microscopy observations. The pristine Cu/Si(111)'pseudo-5 × 5' surface shows up as an incommensurate reconstruction on Si(111) substrate, while Ge-modified surface shows up as an array of Ge atomic clusters grown on the Cu/Si(111)'pseudo-5 × 5' template. It has been found that C60 fullerenes are highly mobile on the both surfaces, hence at the early growth stages fullerenes are accumulated along the atomic steps forming their quasi-one-dimensional molecular stripes. With further C60 deposition, almost ideal two-dimensional close-packed molecular monolayers are formed. The layers are modulated as evidenced by developing quasi-periodic pattern of dim and bright fullerenes displaying 2 × 2 periodicity. Contrast difference between dim and bright fullerenes is supposed to have a topographical origin, namely, bright fullerenes reside higher than dim fullerenes. Dim fullerenes were concluded to occupy centers of hexagons which constitute honeycomb-like structure of the Cu/Si(111)'pseudo-5 × 5' surface. For the Ge-modified surface, this means that adsorbing C60 fullerenes displace Ge atoms from their original positions to the interstitial sites in the molecular monolayer. Ge atoms were found to terminate rotational motion of selected fullerenes in the layer.

  5. Occupied and unoccupied electronic states on vicinal Si(111) surfaces decorated with monoatomic gold chains; Besetzte und unbesetzte elektronische Zustaende vizinaler Si(111)-Oberflaechen mit atomaren Goldketten

    Energy Technology Data Exchange (ETDEWEB)

    Biedermann, Kerstin

    2012-07-12

    In this work, the occupied and unoccupied electronic states of vicinal Si(111)-Au surfaces were investigated. The research focused on amending the experimental electronic band structure by two-photon photoemission and laser-based photoemission and bringing it in line with theoretical band structure calculations. This work dealt with the Si(553)-Au, the Si(111)-(5x2)-Au and the Si(557)-Au surface. Angle-resolved UV-photoelectron spectroscopy gave access to the occupied part of the band structure and thus to the energetic position, the dispersion and the symmetry of the occupied states. Bichromatic two-photon photoemission, however, revealed information about the energetics and, in addition, about the dynamics of unoccupied states on a femtosecond timescale. Notably, the selective polarization of the laser pulses allowed for distinguishing and classifying many of the states with respect to their symmetry. All three surfaces exhibited both surface and bulk states in the occupied part of the band structure. They could be clearly identified and separated from surface contributions by means of tight-binding calculations of the bulk band structure of silicon and by comparison to each other. An added similarity of these surfaces are the one-dimensional Rashba-split gold states, which definitely show dispersion along the chains but not perpendicular to them. All surfaces exhibit states which can easily be assigned to the gold chains. Additional features, however, cannot be attributed clearly to the characteristics of the complex surface reconstruction in all cases. An assignment to surface states was only successfully accomplished for Si(553)-Au. The primary emphasis of this photoemission study was on the Si(553)-Au surface, which shows the smallest defect density in comparison to the other surfaces and hence exhibits the sharpest peaks in the experimental spectra. In accordance with ab-initio band structure calculations this surface also displays, in addition to one

  6. Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers

    OpenAIRE

    2012-01-01

    Microstructures of stacked silicon-nitride/amorphous-silicon/crystalline-silicon (SiN_x/a-Si/c-Si) layers prepared by catalytic chemical vapor deposition were investigated with scanning transmission electron microscopy to clarify the origin of the sensitive dependence of surface recombination velocities (SRVs) of the stacked structure on the thickness of the a-Si layer. Stacked structures with a-Si layers with thicknesses greater than 10 nm exhibit long effective carrier lifetimes, while thos...

  7. Insulin adsorption on crystalline SiO2: Comparison between polar and nonpolar surfaces using accelerated molecular-dynamics simulations

    Science.gov (United States)

    Nejad, Marjan A.; Mücksch, Christian; Urbassek, Herbert M.

    2017-02-01

    Adsorption of insulin on polar and nonpolar surfaces of crystalline SiO2 (cristobalite and α -quartz) is studied using molecular dynamics simulation. Acceleration techniques are used in order to sample adsorption phase space efficiently and to identify realistic adsorption conformations. We find major differences between the polar and nonpolar surfaces. Electrostatic interactions govern the adsorption on polar surfaces and can be described by the alignment of the protein dipole with the surface dipole; hence spreading of the protein on the surface is irrelevant. On nonpolar surfaces, on the other hand, van-der-Waals interaction dominates, inducing surface spreading of the protein.

  8. Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement.

    Science.gov (United States)

    Shin, Jae Cheol; Mohseni, Parsian K; Yu, Ki Jun; Tomasulo, Stephanie; Montgomery, Kyle H; Lee, Minjoo L; Rogers, John A; Li, Xiuling

    2012-12-21

    We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In(x)Ga(1-x)As nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In(x)Ga(1-x)As (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid In(x)Ga(1-x)As NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

  9. The performance of Y2O3 as interface layer between La2O3 and p-type silicon substrate

    Directory of Open Access Journals (Sweden)

    Shulong Wang

    2016-11-01

    Full Text Available In this study, the performance of Y2O3 as interface layer between La2O3 and p-type silicon substrate is studied with the help of atomic layer deposition (ALD and magnetron sputtering technology. The surface morphology of the bilayer films with different structures are observed after rapid thermal annealing (RTA by atomic force microscopy (AFM. The results show that Y2O3/Al2O3/Si structure has a larger number of small spikes on the surface and its surface roughness is worse than Al2O3/Y2O3/Si structure. The reason is that the density of Si substrate surface is much higher than that of ALD growth Al2O3. With the help of high-frequency capacitance-voltage(C-V measurement and conductivity method, the density of interface traps can be calculated. After a high temperature annealing, the metal silicate will generate at the substrate interface and result in silicon dangling bond and interface trap charge, which has been improved by X-ray photoelectron spectroscopy (XPS and interface trap charge density calculation. The interface trapped charge density of La2O3/Al2O3/Si stacked gate structure is lower than that of La2O3/Y2O3/Si gate structure. If Y2O3 is used to replace Al2O3 as the interfacial layer, the accumulation capacitance will increase obviously, which means lower equivalent oxide thickness (EOT. Our results show that interface layer Y2O3 grown by magnetron sputtering can effectively ensure the interface traps near the substrate at relative small level while maintain a relative higher dielectric constant than Al2O3.

  10. ZSM-5 nanowires assembly supported on medium surface area foam beta-SiC composite with nanoscopic surface properties.

    Science.gov (United States)

    Vanhaecke, Estelle; Ivanova, Svetlana; Louis, Benoît; Pham, Charlotte; Pham-Huu, Cuong

    2009-06-01

    The present study reports the synthesis of supported zeolite with nanoscopic size on the SiC-based composite combining nanoscopic properties, i.e., SiC nanofibers, and macroscopic shaping, i.e., SiC foam with centimeters size. The SiC nanofibers have been obtained by the transformation of the carbon nanofibers by carburization in the presence of SiO vapour and then the zeolite was deposited on the SiC foam support. The different nature of the support results in different morphologies on zeolite crystal.

  11. Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiN{sub x}:H/c -Si hetero-interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, Heike; Conrad, Erhard; Korte, Lars; Schmidt, Manfred [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut fuer Silizium-Photovoltaik, Berlin (Germany); Wuensch, Frank; Kunst, Marinus [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut Solare Brennstoffe und Energiespeichermaterialien, Berlin (Germany); Laades, Abdelazize; Stuerzebecher, Uta [CiS Institut fuer Mikrosensorik GmbH, SolarZentrum Erfurt (Germany)

    2011-03-15

    Surface charge, surface state density and interface recombination behavior on polished float zone (FZ) solar cell substrates were investigated after various wet-chemical pre-cleaning procedures and deposition of amorphous silicon (a-Si:H) or silicon nitride (a-SiNx:H). Applying surface photo voltage (SPV), microwave detected photo conductance decay ({mu}W-PCD) and transient microwave conduction (TRMC) measurements, electronic interface properties were monitored repeatedly during the preparation processes. As shown for an inverted a-Si:H/c-Si hetero-junction structure, with front side passivation by a-SiN{sub x}:H and a p-type a-Si:H emitter on the rear side, the effect of optimised wet-chemical pre-treatment can be preserved during the subsequent soft plasma enhanced chemical vapour deposition of a-Si:H or a-SiN{sub x}:H. This leads to hetero-interfaces with low interface recombination velocities. These results were compared to previously reported findings, obtained on textured Czochralski (CZ) single crystalline substrates. a-SiN{sub x}:H is known to result in a field effect passivation. Nevertheless a strong influence of wet-chemical treatments on surface charge and recombination losses was observed on both flat and textured a-SiN{sub x}:H/c-Si interfaces. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Atomic layer deposition of ZnO on thermal SiO2 and Si surfaces using N2-diluted diethylzinc and H2O2 precursors

    Science.gov (United States)

    Qian, Ke-Jia; Chen, Sun; Zhu, Bao; Chen, Lin; Ding, Shi-Jin; Lu, Hong-Liang; Sun, Qing-Qing; Zhang, David Wei; Chen, Zhenyi

    2012-03-01

    ZnO nanodots are attracting more and more attention in various photoelectrical applications due to multiple excition generation. In this article, atomic layer deposition (ALD) growth of ZnO nanodots has been realized for the first time on both thermal SiO2 and Si surfaces using N2-diluted gaseous DEZn and H2O2 precursors. The experimental results indicate that the ALD ZnO exhibits a nano-crystalline film with corrugated surfaces in the case of the deposition temperature of 200 °C, likely due to concrescence among ZnO nanodots. When the deposition temperature is increased up to 300 °C, ZnO is grown in the form of well-discrete nanodots. This is due to increased desorption of the reacting molecules and a reduction of nucleation sites on the growing surfaces at 300 °C, thus leading to the reaction between DEZn and sbnd OH groups only on some favorable sites from thermodynamic and energy points of view. In terms of the thermal SiO2 surface, ZnO nanodots with a density of around 5 × 1010 cm-2 are obtained for 100 cycles. As for the Si surface, ZnO nanodots with a density as high as ˜1 × 1011 cm-2 are achieved for 50 cycles. Finally, the X-ray photoelectron spectroscopy and X-ray diffraction analyses reveal that the ALD ZnO at 300 °C is dominated by Znsbnd O bonds together with a small quantity of Znsbnd OH bonds, and the deposition temperature of 300 °C can result in preferential growth of ZnO (0 0 2) orientation and a bigger crystallite size.

  13. Active Sites on the Surface of Nano-Sized SiO2-TiO2 Composites

    Science.gov (United States)

    Valova, M. S.; Koryakova, O. V.; Maksimovskikh, A. I.; Fedorova, O. V.; Murashkevich, A. N.; Alisienok, O. A.

    2014-07-01

    The nature and amount of active sites on the surface of nano-sized SiO2-TiO2 oxides were studied by FTIR spectroscopy and back-titration methods. Increasing the TiO2 content in the SiO2-TiO2 composites increased the amount of activated surface H2O and adsorbed CO2. This increased the amount of active basic centers on the oxide surface and caused the first of two observed mechanisms for benzaldehyde adsorption (with and without its activation) to begin to prevail.

  14. Surface texture modification of spin-coated SiO2 xerogel thin films by TMCS silylation

    Indian Academy of Sciences (India)

    Yogesh S Mhaisagar; Bhavana N Joshi; A M Mahajan

    2012-04-01

    The SiO2 xerogel thin films were deposited successfully by sol–gel technique via the acid-catalyzed hydrolysis and condensation of tetraethylorthosilicate (TEOS) with ethanol as a solvent. Further, the deposited thin films were treated wet chemically by trimethylchlorosilane (TMCS) and hexane solution with 10% and 15% volume ratio to remove the hydroxyl groups from the surface of deposited SiO2 thin films. These as deposited and surfacemodified films were characterized by ellipsometer, Fourier transform infrared (FTIR) spectrometer and contact angle meter. The presence of 2900 and 850 cm-1 peaks of CH3 vibrations in FTIR spectra of surface-modified films confirms the hydrphobisation of SiO2 surface. The maximum contact angle of 108.7° was observed for the surface-modified film at 10% TMCS.

  15. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    Science.gov (United States)

    Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

    2017-01-01

    For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  16. Wetting Angles and Surface Tension of Ge(1-x)Si(x) Melts on Different Substrate Materials

    Science.gov (United States)

    Croell, A.; Kaiser, N.; Szofran, F. R.; Cobb, S. D.; Volz, M. P.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The wetting angles and the surface tension of Ge(1-x)Si(x) melts (0.02 less than x less than 0.13) have been measured on various substrate materials using the sessile drop technique. Fused quartz, sapphire, SiC, glassy carbon, pBN, AIN, and Si3N4 have been used as substrates. The highest and most stable wetting angles were found for pBN substrates with 164 +/- 8 deg., either under forming gas with an additional carbon getter in the system or under active vacuum. The surface tension measurements resulted in a value of +2.2 x 10(exp -3) N/m.at%Si for the concentration dependence delta(gamma)/(delta)C. For the composition range measured, the temperature dependence (delt)gamma/(delta)T showed values similar to those of pure Ge, on average -0.07 x 10(exp -3) N/mK.

  17. Nanopatterning on silicon surface using atomic force microscopy with diamond-like carbon (DLC-coated Si probe

    Directory of Open Access Journals (Sweden)

    Zhou Jingfang

    2011-01-01

    Full Text Available Abstract Atomic force microscope (AFM equipped with diamond-like carbon (DLC-coated Si probe has been used for scratch nanolithography on Si surfaces. The effect of scratch direction, applied tip force, scratch speed, and number of scratches on the size of the scratched geometry has been investigated. The size of the groove differs with scratch direction, which increases with the applied tip force and number of scratches but decreases slightly with scratch speed. Complex nanostructures of arrays of parallel lines and square arrays are further fabricated uniformly and precisely on Si substrates at relatively high scratch speed. DLC-coated Si probe has the potential to be an alternative in AFM-based scratch nanofabrication on hard surfaces.

  18. Interaction of tetraethoxysilane with OH-terminated SiO2 (0 0 1) surface: A first principles study

    Science.gov (United States)

    Deng, Xiaodi; Song, Yixu; Li, Jinchun; Pu, Yikang

    2014-06-01

    First principles calculates have been performed to investigate the surface reaction mechanism of tetraethoxysilane (TEOS) with fully hydroxylated SiO2(0 0 1) substrate. In semiconductor industry, this is the key step to understand and control the SiO2 film growth in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. During the calculation, we proposed a model which breaks the surface dissociative chemisorption into two steps and we calculated the activation barriers and thermochemical energies for each step. Our calculation result for step one shows that the first half reaction is thermodynamically favorable. For the second half reaction, we systematically studied the two potential reaction pathways. The comparing result indicates that the pathway which is more energetically favorable will lead to formation of crystalline SiO2 films while the other will lead to formation of disordered SiO2 films.

  19. Low frequency effects of surface states on 4H—SiC metal—semiconductor field effect transistor

    Institute of Scientific and Technical Information of China (English)

    YangLin-An; YuChun-Li; ZhangYi-Men; ZhangYu-Ming

    2003-01-01

    The process-related surface state effect is investigated the fabrication of SiC devices, and a nonllnear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is propose, which takes into account the surface related parameters. The frequency-and temperature-dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices

  20. Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si

    Science.gov (United States)

    Dou, Y. N.; He, Y.; Huang, C. Y.; Zhou, C. L.; Ma, X. G.; Chen, R.; Chu, J. H.

    2012-11-01

    In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from ˜0 cm-2 to -2×1012 cm-2 by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO x layer.

  1. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  2. An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED

    Institute of Scientific and Technical Information of China (English)

    ZHAO Li-qing; WU Chun-ya; HAO Da-shou; YAO Ying; MENG Zhi-guo; XIONG Shao-zhen

    2009-01-01

    Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro-posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the parameters of LTPS TFTs were extracted from the LTPS TFTs made in our lab. The simulation results indicate that the circuit can fulfill the driving function.

  3. Ab initio study of the adsorption of antimony and arsenic on the Si(110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Huitzil-Tepanecatl, Arely [Postgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, BUAP, Apartado Postal 52, Puebla 72000 (Mexico); Cocoletzi, Gregorio H., E-mail: cocoletz@sirio.ifuap.buap.m [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, Codigo Postal 22860, Apartado Postal 2732 Ensenada, Baja California (Mexico); Centro de Nanociencia y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 2681, Ensenada, Baja California, 22800 (Mexico); Instituto de Fisica, Universidad Autonoma de Puebla, Apartado Postal J-48, Puebla 72570 (Mexico); Takeuchi, Noboru [Centro de Nanociencia y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 2681, Ensenada, Baja California, 22800 (Mexico)

    2010-10-29

    We have performed first principles total energy calculations to investigate the adsorption of Sb and As adatoms on the Si(110) surface using a (2 x 3) supercell. The energetics and atomic structures have been investigated in four atomic configurations. One structure is obtained by placing 1/3 of a monolayer (ML) of Sb (As) atoms on the Si(110) surface. The other three geometries are obtained by depositing 1 ML of Sb (As) atoms on the surface. In the first case the structure is formed by four trimers, in the second case the geometry is formed by zigzag atomic chains and in the third case the structure contains 'microfacets'. The energetics results of the Sb adsorption show that for low coverage the tetrahedrons formed by the adsorption of 1/3 ML is the most stable configuration, while in the monolayer region the zigzag atomic chain is the most stable structure. However, the total energies of the trimer and microfacet structures are slightly higher, indicating that under some conditions, they may be formed. In an experimental report it has been suggested that the adsorption of 1/3 and 1 ML of Sb corresponds to the low and high coverage in the experiments of Zotov et al. [A. V. Zotov, V. G. Lifshifts, and A. N. Demidchik, Surf. Sci. 274, L583 (1992)]. On the other hand, our results of the As adsorption show that for low coverage, the tetrahedrons in the adsorption of 1/3 ML also give the most stable configuration. However, at the 1 ML coverage, a structure formed by microfacets is the most stable structure, in agreement with previous results.

  4. Properties of amorphous Si-rich silicon nitride prepared by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M.; Rojahn, M. [Stuttgart Univ. (Germany). Inst. fuer Physikalische Elektronik

    2000-02-14

    This article investigates the physics underlying field effect passivation of p-type Si surfaces coated with SiN{sub x}(:H) of various Si contents. We find a correlation between the effective lifetime of minority carriers in p-type Si passivated with SiN{sub x}, on the one hand, and the dark dc-conductivity data of corresponding a-SiN{sub x}-films with different composition, on the other hand. By increasing the amount of Si in a-SiN{sub x}(:H) structures the bandgap decreases from about 5 to 2 eV. As a result, the dark dc-conductivity rises by several orders of magnitude. The conductivity prefactors and the activation energies as calculated from the conductivity versus temperature data obey the Meyer-Neldel relation with an axio-intercept of about 10{sup -7} ({omega}cm){sup -1} and a slope of about 35 meV. Thus, Si-rich a-SiN{sub x}(:H) films behave like a defect doped n-type semiconductor. The activation energy of the conductance in films with the same composition changes with the hydrogen content. A minimum in the activation energy correlates with a minimum of the surface recombination velocity at the a-SiN{sub x}/p-Si interface. We ascribe both effects to a variation of the Fermi level in the films. (orig.)

  5. Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

    CERN Document Server

    Niebieskikwiat, D G; Pregliasco, G R; Gayone, J E; Grizzi, O; Sanchez, E A

    2002-01-01

    We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar sup + bombardment. The irradiation was carried on normal to the surface with doses in the 1-60x10 sup 1 sup 6 ions/cm sup 2 range. We observed a first generation of blisters at a critical dose around 3x10 sup 1 sup 6 ions/cm sup 2 , which flakes off at 19x10 sup 1 sup 6 ions/cm sup 2 , and a second generation of smaller blisters between 35 and 45x10 sup 1 sup 6 ions/cm sup 2. Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar sup + implantation. For doses greater than 20x10 sup 1 sup 6 Ar sup + /cm sup 2 the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.

  6. Vapor sensing by means of a ZnO-on-Si surface acoustic wave resonator

    Science.gov (United States)

    Martin, S. J.; Schweizer, K. S.; Schwartz, S. S.; Gunshor, R. L.

    Surface Acoustic Wave (SAW) devices can function as sensitive detectors of vapors. The high surface acoustic energy density of the device makes it extremely sensitive to the presence of molecules adsorbed from the gas phase. Mass loading by the adsorbate is the primary mechanism for the surface wave velocity perturbation. If the device is used as the frequency control element of an oscillator, perturbations in wave velocity on the order of 10 parts per billion may be resolved by means of a frequency counter. Zno-on-Si SAW resonators have been examined as vapor sensors. The piezoelectric ZnO layer permits transduction between electrical and acoustic energies, as well as endowing the surface with particular adsorptive properties. These devices exhibit C-values up to 12,000 at a resonant frequency of 109 MHZ. The resonant frequency of the device shifts upon exposure to a vapor-air mixture, with a transient response which is distinct for each of the organic vapors tested. Due to the permeability of the polycrystalline ZnO layer, the instantaneous reversibility of the resonant frequency shift is found to depend on the type of adsorbed molecule.

  7. On the short-range order of the SiO{sub x} (0 {<=} x {<=} 2) surface

    Energy Technology Data Exchange (ETDEWEB)

    Bondarchuk, O., E-mail: bobon@fhi-berlin.mpg.de [Department of RadioPhysics, University of Kiev, Volodymerska Str. 64, Kiev (Ukraine); Goysa, S.; Koval, I.; Melnik, P.; Nakhodkin, M. [Department of RadioPhysics, University of Kiev, Volodymerska Str. 64, Kiev (Ukraine)

    2009-04-01

    Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) [O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett. 4 (1997) 965] was used to investigate surface structure of the SiO{sub x} (0 {<=} x {<=} 2). SiO{sub x} surface with different stoichiometry was prepared by implantation of 500 eV oxygen ions into a silicon wafer. Fourier transformation of the FS ESES contains one peak at 2.32 A for Si, two peaks at 1.62 A and 2.65 A for a-SiO{sub 2} and three peaks centered at 1.6-1.7 A, 2.1-2.2 A and 2.65-3.04 A for SiO{sub x}. Peaks at 1.62 A and 2.65 A are assigned to Si-O and O-O nearest distances correspondently. Ratio of the area under the peak at 2.65 A to the area under the peak at 1.62 A turned out to be not constant but grows linearly with the composition parameter x. The latter is considered to prove validity of the Random Bond Model to describe short-range order on the surface of non-stoichiometric silicon oxide.

  8. Formation of p-type ZnO thin film through co-implantation

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  9. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  10. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    Science.gov (United States)

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  11. Effect of Na adsorption on the structural and electronic properties of Si(111)√3 × √3-Au surface.

    Science.gov (United States)

    Bondarenko, L V; Matetskiy, A V; Yakovlev, A A; Tupchaya, A Y; Gruznev, D V; Ryzhkova, M V; Tsukanov, D A; Borisenko, E A; Chukurov, E N; Denisov, N V; Vilkov, O; Vyalikh, D V; Zotov, A V; Saranin, A A

    2014-02-05

    Adsorption of ∼0.1 ML of Na onto the Si(111)√3 × √3-Au surface held at 300 °C has been found to induce pronounced changes in its structural and electronic properties. Domain wall networks, characteristic of the pristine surface, are removed completely, leading to the formation of a highly ordered homogeneous surface. The original atomic arrangement of the Si(111)√3 × √3-Au is preserved and Na atoms occupy T4 adsorption sites at the centers of surface Si trimers. Upon Na adsorption, a pronounced metallic S1 surface-state band develops. It is characterized by a large spin splitting (momentum splitting at the Fermi level Δk∥ = 0.027 Å(-1) and consequent energy splitting ΔEF = 110 meV), large electron filling (on the order of 0.5 electrons per √3 × √3 unit cell) and small effective electron mass of (0.028 ± 0.006)me. The natural consequence of the latter properties is a high surface conductivity of the Si(111)√3 × √3-(Au, Na) surface.

  12. Orbital Calculations of Kaolinite Surface:on Substitution of Al3+ for Si4+ in the Tetrahedral Sites

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The surface properties of kaolinite were determined using density functional theory discrete variational method (DFT-DVM) and Gaussian 03 program. A SiO4 tetrahedral hexagonal ring with two Al octahedra was chosen to model the kaolinite crystal. The total density of states of the kaolinite cluster are located near the Fermi level at both sides of the Fermi level. Both the highest occupied molecular orbit(HOMO) and the lowest unoccupied molecular orbit (LUMO) of kaolinite indicate that kaolinite system can not only readily interact with electron-acceptor species, but also readily interact with electron-donor species on the edge surface and the gibbsite layer surface, and thus, shows amphoteric behavior. Substitution of Al3+ for Si4+ in the tetrahedral site linking the vacant Al3+ octahedra does not increase the surface chemical reactivity of kaolinite, while substitution of Al3+ for Si4+ in the tetrahedral site with the apex O linking Al3+ octahedra increase the surface chemical reactivity of the siloxane surface of kaolinite, especially acting as electron donors.Additionally, substitution of Al3+ for Si4+ in the tetrahedral site results in the re-balance of charges, leading to the increase of negative charge of the coordinated O atoms of the AlO4 tetrahedra, and therefore favoring the formation of ionic bonds between cations and the surface O atoms in the basal plane.

  13. Exceptional electrochemical performance of Si-nanowires in 1,3-dioxolane solutions: a surface chemical investigation.

    Science.gov (United States)

    Etacheri, Vinodkumar; Geiger, Uzi; Gofer, Yossi; Roberts, Gregory A; Stefan, Ionel C; Fasching, Rainier; Aurbach, Doron

    2012-04-10

    The effect of 1,3-dioxolane (DOL) based electrolyte solutions (DOL/LiTFSI and DOL/LiTFSI-LiNO(3)) on the electrochemical performance and surface chemistry of silicon nanowire (SiNW) anodes was systematically investigated. SiNWs exhibited an exceptional electrochemical performance in DOL solutions in contrast to standard alkyl carbonate solutions (EC-DMC/LiPF(6)). Reduced irreversible capacity losses, enhanced and stable reversible capacities over prolonged cycling, and lower impedance were identified with DOL solutions. After 1000 charge-discharge cycles (at 60 °C and a 6 C rate), SiNWs in DOL/LiTFSI-LiNO(3) solution exhibited a reversible capacity of 1275 mAh/g, whereas only 575 and 20 mAh/g were identified in DOL/LiTFSI and EC-DMC solutions, respectively. Transmission electron microscopy (TEM) studies demonstrated the complete and uniform lithiation of SiNWs in DOL-based electrolyte solutions and incomplete, nonuniform lithiation in EC-DMC solutions. In addition, the formation of compact and uniform surface films on SiNWs cycled in DOL-based electrolyte solutions was identified by scanning electron microscopic (SEM) imaging, while the surface films formed in EC-DMC based solutions were thick and nonuniform. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy were employed to analyze the surface chemistry of SiNWs cycled in EC-DMC and DOL based electrolyte solutions. The distinctive surface chemistry of SiNWs cycled in DOL based electrolyte solutions was found to be responsible for their enhanced electrochemical performances.

  14. Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates

    Science.gov (United States)

    Ueno, Kazuyoshi; Fujishima, Shota; Yamashita, Makoto; Mitsumori, Akiyoshi

    2016-05-01

    To investigate the similarity and difference of substrate conduction type in the time-dependent dielectric breakdown (TDDB) tests for the barrier integrity against Cu diffusion under bias-temperature stress (BTS), the TDDB reliability of electroless NiB and CoWP/NiB was determined by metal oxide semiconductor (MOS) structures on n-type Si (n-Si) substrates, and the test results were compared with those using p-type Si (p-Si) substrates. The TDDB results and mechanism were observed to be qualitatively the same as Cu diffusion for both conduction types. However, the TDDB lifetime using p-Si was found to be potentially shorter because of the reverse bias conditions than that using n-Si under the forward bias conditions.

  15. AlSiTiN and AlSiCrN multilayer coatings: Effects of structure and surface composition on tribological behavior under dry and lubricated conditions

    Science.gov (United States)

    Faga, Maria Giulia; Gautier, Giovanna; Cartasegna, Federico; Priarone, Paolo C.; Settineri, Luca

    2016-03-01

    Nanocomposite coatings have been widely studied over the last years because of their high potential in several applications. The increased interest for these coatings prompted the authors to study the tribological properties of two nanocomposites under dry and lubricated conditions (applying typical MQL media), in order to assess the influence of the surface and bulk properties on friction evolution. To this purpose, multilayer and nanocomposite AlSiTiN and AlSiCrN coatings were deposited onto tungsten carbide-cobalt (WC-Co) samples. Uncoated WC-Co materials were used as reference. Coatings were analyzed in terms of hardness and adhesion. The structure of the samples was assessed by X-ray diffraction (XRD), while the surface composition was studied by XPS analysis. Friction tests were carried out under both dry and lubricated conditions using an inox ball as counterpart. Both coatings showed high hardness and good adhesion to the substrate. As far as the friction properties are concerned, in dry conditions the surface properties affect the sliding contact at the early beginning, while bulk structure and tribolayer formation determine the main behavior. Only AlSiTiN coating shows a low and stable coefficient of friction (COF) under dry condition, while the use of MQL media results in a rapid stabilization of the COF for all the materials.

  16. Surface chemistry in the process of coating mesoporous SiO2 onto carbon nanotubes driven by the formation of Si-O-C bonds.

    Science.gov (United States)

    Paula, Amauri J; Stéfani, Diego; Souza Filho, Antonio G; Kim, Yoong Ahm; Endo, Morinobu; Alves, Oswaldo L

    2011-03-07

    The deposition of mesoporous silica (SiO(2)) on carbon nanotubes (CNTs) has opened up a wide range of assembling possibilities by exploiting the sidewall of CNTs and organosilane chemistry. The resulting systems may be suitable for applications in catalysis, energy conversion, environmental chemistry, and nanomedicine. However, to promote the condensation of silicon monomers on the nanotube without producing segregated particles, (OR)(4-x)SiO(x)(x-) units must undergo nucleophilic substitution by groups localized on the CNT sidewall during the transesterification reaction. In order to achieve this preferential attachment, we have deposited silica on oxidized carbon nanotubes (single-walled and multiwalled) in a sol-gel process that also involved the use of a soft template (cetyltrimethylammonium bromide, CTAB). In contrast to the simple approach normally used to describe the attachment of inorganic compounds on CNTs, SiO(2) nucleation on the tube is a result of nucleophilic attack mainly by hydroxyl radicals, localized in a very complex surface chemical environment, where various oxygenated groups are covalently bonded to the sidewall and carboxylated carbonaceous fragments (CCFs) are adsorbed on the tubes. Si-O-C covalent bond formation in the SiO(2)-CNT hybrids was observed even after removal of the CCFs with sodium hydroxide. By adding CTAB, and increasing the temperature, time, and initial amount of the catalyst (NH(4)OH) in the synthesis, the SiO(2) coating morphology could be changed from one of nanoparticles to mesoporous shells. Concomitantly, pore ordering was achieved by increasing the amount of CTAB. Furthermore, preferential attachment on the sidewall results mostly in CNTs with uncapped ends, having sites (carboxylic acids) that can be used for further localized reactions.

  17. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

    Science.gov (United States)

    Sitnikov, S. V.; Latyshev, A. V.; Kosolobov, S. S.

    2017-01-01

    We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si(111) surface with extremely wide (up to 120 μm in size) terraces we have estimated the activation energy associated with the surface-bulk vacancy exchange processes. We show that atomic steps motion and negative islands nucleation kinetics at temperatures above 1180 °C can be described by the step-flow model of Burton, Cabrera and Frank taking into account advacancies formation. By comparing experimental results with predictions of model we conclude that the surface mass transport at temperatures above 1180 °C is governed by surface vacancies nucleation and interaction with atomic steps rather than via adatoms surface diffusion.

  18. Research on the Surface Micro-configuration in Vibration Cutting Particle Reinforced Metallic Matrix Composites SiC_p/Al

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The cutting performance of particulate reinforced me tallic matrix composites(PRMMCs) SiC p/Al in ultrasonic vibration cutting and c ommon cutting with carbide tools and PCD tools was researched in the paper. Mic rostructure of machined surface was described, the relation between cutting para meters and surface roughness was presented, and characteristic of the surface re mained stress was also presented. Furthermore, wear regularity and abrasion resi stance ability of tools in ultrasonic vibration cut...

  19. Texturing of the Silicon Substrate with Nanopores and Si Nanowires for Anti-reflecting Surfaces of Solar Cells

    Directory of Open Access Journals (Sweden)

    A.A. Druzhinin

    2015-06-01

    Full Text Available The paper presents the prospects of obtaining a functional multi-layer anti-reflecting coating of the front surface of solar cells by texturing the surface of the silicon by electrochemical etching. The physical model of the "Black Si" coating with discrete inhomogeneity of the refractive index and technological aspects of producing of "Black Si" functional anti-reflecting coatings were presented. The investigation results of the spectral characteristics of the obtained multilayer multiporous "Black Si" coatings for silicon solar cells made by electrochemical etching are presented. The possibility of creating the texture on a silicon wafer surface using silicon nanowires and ordered nanopores obtained by metal-assisted chemical etching was shown.

  20. Growth of ordered molecular layers of PTCDA on Pb/Si(111) surfaces: a scanning tunneling microscopy study

    Science.gov (United States)

    Nicoara, N.; Méndez, J.; Gómez-Rodríguez, J. M.

    2016-09-01

    The growth of well-ordered layers of PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) molecules on Pb/Si(111) surfaces has been investigated by scanning tunneling microscopy (STM) under ultra-high vacuum conditions. These Pb/Si(111) substrates, which present several distinct phases with different reconstructions, have allowed the exploration of new passivation schemes for the growth of ordered organic layers on Si(111) surfaces. According to our STM measurements, the higher Pb coverage phases (namely the so-called hexagonal incommensurate and (1× 1) reconstructions) present rather inert surfaces that allow easy diffusion of PTCDA molecules at room temperature and the formation of a well ordered first molecular layer which displays a herringbone reconstruction. For multilayer PTCDA coverage on these Pb/Si(111) phases, the formation of three-dimensional crystallites, with structure similar to that of the bulk PTCDA crystal, has been observed, indicating that a Stranski-Krastanov growth mode is dominant. On lower Pb coverage substrates (presenting the defective β -(\\sqrt{3}× \\sqrt{3})R30^\\circ and mosaic γ -(\\sqrt{3}× \\sqrt{3})R30^\\circ reconstructions) no long range PTCDA order has been obtained. The systematic variation of the substrate reconstruction has allowed in the present work the relation of the surface reactivity of each reconstruction to the formation of ordered layers of PTCDA on Pb/Si(111) substrates.

  1. Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

    Science.gov (United States)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

    1998-01-01

    The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

  2. Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

    Science.gov (United States)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

    1998-01-01

    The surface and interface properties of Pd(sub 0.9)Cr(sub 0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(sub x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 deg. C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Pd(sub x)Si formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(sub 0.9)Cr(sub 0.1) film are likely responsible for significantly improved device sensitivity.

  3. Simulation and Measurement of Angle Resolved Reflectance from Black Si Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Wu, Kaiyu; Schmidt, Michael Stenbæk

    2015-01-01

    reflectance below 0.1% at incident angles below 70o is seen. In both simulation and experiment the specular reflectance is below 10% at incident angles below 65o and below 1% at incident angles below 45o in the case of non-linear graded refractive index. From the simulation results the non-linear graded...... refractive index yields lower reflectance than the linearly graded refractive index.......In this work angle-resolved reflectance from nanostructured Si surfaces realized by maskless RIE texturing has been simulated and measured. The simulation and experimental measurement data show the same trend. Experimentally a total reflectance below 1% for incident angles below 30o and specular...

  4. Growth and characterization of organic layers deposited on porous-patterned Si surface

    Directory of Open Access Journals (Sweden)

    Gorbach Tamara Ya.

    2017-01-01

    Full Text Available The organic layers with the thickness from a few nanometers up to few micrometers have been deposited from the chemical solution at room temperature on porous patterned Si surfaces using two medical solutions: thiamine diphosphide (pH=1÷2 and metamizole sodium (pH=6÷7. Based on evolution of morphology, structural and compositional features obtained by scanning electron microscopy, X-ray analysis, reflectance high energy electron diffraction the grown mechanisms in thin organic layers are discussed in the terms of terrace-step-kink model whereas self-organized assemblies evaluated more thick layers. Transport mechanism features and possible photovoltaic properties are discussed on the base of differential current-voltage characteristics.

  5. Single atom diffusion of Pb on a Si(1 1 1)-7 × 7 surface

    Science.gov (United States)

    Kuntová, Z.; Jelínek, P.; Cháb, V.; Chvoj, Z.

    2004-09-01

    Pb diffusion on the Si(1 1 1)-7 × 7 surface was studied with 16 different energy barriers. As a part of general problem of diffusion in the unit cell, some characteristics of diffusion (as frequency factor, effective energy barrier or differences in binding energy) was found analytically as a steady state solution of the master equation. The probability distribution of the occupation of particular sites was compared with the result of the Monte Carlo simulation and the STM experiment. Starting from the values obtained with the semi-empirical extended Hückel approximation, the diffusion barriers were adjusted to obtain a reasonable coherence with the experiment. The results of MC simulation and the analytical solution agree quite well and reproduce the dynamics of a Pb atom in the 7 × 7 unit cell.

  6. Relativistic response and novel spin-charge plasmon at the Tl/Si(111) surface

    Science.gov (United States)

    Lafuente-Bartolome, Jon; Gurtubay, Idoia G.; Eiguren, Asier

    2017-07-01

    We present a comprehensive ab initio analysis of the spin-charge correlations at the Tl/Si(111) surface, where the spin-orbit interaction is so strong that a detailed treatment of the noncollinear electron spin appears decisive for the correct description of the response properties. The relativistic limit enforces a unified treatment of the spin and charge densities as a four-vector, and the response function acquires then a 4 ×4 tensor structure. Our all-electron implementation allows us to resolve the real-space structure of the possible collective modes, and demonstrates the emergence of a novel collective excitation combining transverse-spin and ordinary charge oscillations of a similar order of magnitude, whose spin character is strongly enhanced as we approach the q →0 momentum limit.

  7. Growth and characterization of organic layers deposited on porous-patterned Si surface

    Science.gov (United States)

    Gorbach, Tamara Ya.; Smertenko, Petro S.; Olkhovik, G. P.; Wisz, Grzegorz

    2016-12-01

    The organic layers with the thickness from a few nanometers up to few micrometers have been deposited from the chemical solution at room temperature on porous patterned Si surfaces using two medical solutions: thiamine diphosphide (pH=1÷2) and metamizole sodium (pH=6÷7). Based on evolution of morphology, structural and compositional features obtained by scanning electron microscopy, X-ray analysis, reflectance high energy electron diffraction the grown mechanisms in thin organic layers are discussed in the terms of terrace-step-kink model whereas self-organized assemblies evaluated more thick layers. Transport mechanism features and possible photovoltaic properties are discussed on the base of differential current-voltage characteristics.

  8. Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

    CSIR Research Space (South Africa)

    Tshabalala, LC

    2016-03-01

    Full Text Available is often accompanied by numerous shortcomings which either lead to poor surface quality or residual surface damage of the workpiece. In this sense, this work focuses on the application of a pulsed mode, nanosecond Nd:YAG laser system for the surface...

  9. Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.S.; Aslam, D.M. [Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical Engineering

    1996-05-01

    Heat generation and temperature sensing are required for heating applications and for liquid level sensors, mass flow meters, and vacuum and pressure gauges which are based on variations of heat dissipation. Heat generation and temperature sensing are reported in a single p-type diamond resistor fabricated on an oxidized Si substrate using diamond film technology compatible with integrated circuit (IC) processing. Power densities in excess of 600 W/in.{sup 2} are observed for the heaters. The temperature response of the sensor is characterized in the temperature range of 300--725 K. Such a diamond heater/sensor device is reported for the first time.

  10. Comparative study of self-assembled ZnO nanostructures in poly(styrene-acrylic acid) diblock copolymers-[PS]{sub m}/[PAA]{sub n}-on Si and SiO{sub 2}/Si surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ali, H.A. [Electrical and Computer Engineering Department, University of Maryland, College Park, Maryland 20742 (United States); Iliadis, A.A. [Electrical and Computer Engineering Department, University of Maryland, College Park, Maryland 20742 (United States)]. E-mail: agis@eng.umd.edu

    2004-12-22

    A comparative study of the structural characteristics exhibited by the self-assembled ZnO nanoclusters developed on Si and SiO{sub 2}/Si surfaces using diblock copolymers of styrene-acrylic acid, [PS]{sub m}/[PAA]{sub n}, with block repeat unit ratios m/n of 159/63 and 106/17, is reported. These copolymer systems are expected to have self-assembled nanosized spherical domains of the minority acid blocks in solid phase but with domain sizes dependent on their respective block ratios and molecular block lengths. Templating of the ZnO nanoclusters with these copolymer systems enabled the development of the nanoclusters with two different size distributions on the Si and SiO{sub 2}/Si surfaces. The templating process involved the incorporation of a ZnCl{sub 2} precursor into the functional group of the acid blocks in liquid phase at room temperature, application of the doped solution onto the surfaces by spin-casting for the formation of the thin nanocomposite film with ZnCl{sub 2} nanoclusters and subsequent conversion into ZnO by a dry ozone process. The ZnO nanoclusters in the [PS]{sub 159}/[PAA]{sub 63} copolymer and [PS]{sub 106}/[PAA]{sub 17} copolymer were found to have a size distribution of 250-350 and 40-140 nm, respectively. Over-doping with ZnCl{sub 2} precursor resulted in increased size of nanoclusters due to agglomeration in both copolymer systems.

  11. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface.

    Science.gov (United States)

    Jałochowski, M; Kwapiński, T; Łukasik, P; Nita, P; Kopciuszyński, M

    2016-07-20

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed.

  12. Theory of the temperature dependent dielectric function of semiconductors: from bulk to surfaces. Application to GaAs and Si

    Energy Technology Data Exchange (ETDEWEB)

    Shkrebtii, Anatoli I.; Teatro, Timothy; Henderson, Laura [Faculty of Science, University of Ontario Institute of Technology, Simcoe Street North 2000, L1H 7K4 Oshawa (Canada); Ibrahim, Zahraa A. [Faculty of Science, University of Ontario Institute of Technology, Simcoe Street North 2000, L1H 7K4 Oshawa (Canada); Department of Physics, University of Toronto, M5S 1A7, Toronto (Canada); Richter, Wolfgang [Dipartimento di Fisica, Universita di Roma Tor Vergata, 00133 Rome (Italy); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, 10623 Berlin (Germany); Lee, Martin J.G. [Department of Physics, University of Toronto, M5S 1A7, Toronto (Canada)

    2010-08-15

    A novel, efficient method for calculating the temperature dependencies of the linear dielectric functions of semiconductor systems and its application are presented. The method follows an intuitive and natural path with ab-initio finite temperature molecular dynamics providing the thermally perturbed atomic configurations, which are used as structural inputs for calculating the dielectric function. The effect of lattice dynamics, including quantum zero point vibration, on the electronic bands and dielectric function of crystalline (c-) GaAs and Si as well as hydrogenated amorphous Si (a-Si:H) is discussed. Our theoretical results for bulk c-GaAs and c-Si in the range from 0 to 1000 K are in good overall agreement with highly accurate ellipsometric measurements. The implementation of the method resolves a serious discrepancy in energy and line shape between experiment and the latest optical models, all of which neglect lattice dynamics, and provides information on the indirect gap and indirect optical transitions in c-Si. For a-Si:H, the calculated temperature dependent optical response combined with the vibrational spectroscopy provides detailed insight into electronic, dynamical properties, and stability of this important prototypical amorphous semiconductor material. At semiconductor surfaces, dynamical effects are expected to be even more pronounced due to reduced atom coordination and reconstruction. This is demonstrated for C(111) 2 x 1, an intensively studied but controversial surface of the quantum diamond crystal. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  13. STM observation of the surface structures formed on the initial stage of SiC growth using monomethylsilane

    CERN Document Server

    Harashima, M; Akahane, T

    2003-01-01

    A c(4x4) structure formed by exposing monomethylsilane (MMSi) to a Si(001)-(2x1) surface at substrate temperature of 700degC was measured using scanning tunneling microscopy (STM). At the stage that the spots originated from c(4x4) structure were brightly observed by reflection high energy electron diffraction (RHEED), both c(4x4) and (2x1) domains coexisted. From the evaluation of the c(4x4) and the (2x1) structures by lineprofile of STM images, the c(4x4) structure was revealed to be contracted, while the distance between the (2x1) dimer rows was expanded. Using X-ray photoelectron spectroscopy (XPS), we have confirmed that the carbon atoms included in MMSi diffused into Si substrate. It can therefore be assumed that the contraction of the c(4x4) surface was originated from the diffusion of carbon into Si subsurface. Because of small lattice constant of SiC compared to Si, the c(4x4) structure was predicted to become the site that enhances the nucleation of SiC islands. (author)

  14. Ab initio potential energy surface and vibration-rotation energy levels of silicon dicarbide, SiC2.

    Science.gov (United States)

    Koput, Jacek

    2016-10-01

    The accurate ground-state potential energy surface of silicon dicarbide, SiC2 , has been determined from ab initio calculations using the coupled-cluster approach. Results obtained with the conventional and explicitly correlated coupled-cluster methods were compared. The core-electron correlation, higher-order valence-electron correlation, and scalar relativistic effects were taken into account. The potential energy barrier to the linear SiCC configuration was predicted to be 1782 cm(-1) . The vibration-rotation energy levels of the SiC2 , (29) SiC2 , (30) SiC2 , and SiC(13) C isotopologues were calculated using a variational method. The experimental vibration-rotation energy levels of the main isotopologue were reproduced to high accuracy. In particular, the experimental energy levels of the highly anharmonic vibrational ν3 mode of SiC2 were reproduced to within 6.7 cm(-1) , up to as high as the v3  = 16 state.

  15. Tailoring the nickel nanoparticles anchored on the surface of Fe3O4@SiO2 spheres for nanocatalysis

    Science.gov (United States)

    Ding, Lei; Zhang, Min; Zhang, Yanwei; Yang, Jinbo; Zheng, Jing; Hayat, Tasawar; Alharbi, Njud S.; Xu, Jingli

    2017-08-01

    Herein, we report an efficient and universal strategy for synthesizing a unique triple-shell structured Fe3O4@SiO2@C-Ni hybrid composite. Firstly, the Fe3O4 cores were synthesized by hydrothermal reaction, and sequentially coated with SiO2 and a thin layer of nickel-ion-doped resin-formaldehyde (RF-Ni2+) using an extended Stöber method. This was followed by carbonization to produce the Fe3O4@SiO2@C-Ni nanocomposites with metallic nickel nanoparticles embedded in an RF-derived thin graphic carbon layer. Interestingly, the thin SiO2 spacer layer between RF-Ni2+ and Fe3O4 plays a critical role on adjusting the size and density of the nickel nanoparticles on the surface of Fe3O4@SiO2 nanospheres. The detailed tailoring mechanism is explicitly discussed, and it is shown that the iron oxide core can react with the nickel nanoparticles without the SiO2 spacer layer, and the size and density of the nickel nanoparticles can be effectively controlled when the SiO2 layer exits. The multifunctional composites exhibit a significantly enhanced catalytic performance in the reduction of 4-nitrophenol (4-NP).

  16. Effect of cerium conversion of A3xx.x/