Semiconducting La2AuP3, the metallic conductor Ce2AuP3, and other rare-earth gold phosphides Ln2AuP3 with two closely related crystal structures

International Nuclear Information System (INIS)

Eschen, M.; Kotzyba, G.; Kuennen, B.; Jeitschko, W.

2001-01-01

The compounds Ln 2 AuP 3 were synthesized by reaction of the elemental components in evacuated silica tubes. Their crystal structures were determined from single-crystal diffractometer data. The compounds with Ln = La, Ce, and Pr crystallize with an orthorhombic U 2 NiC 3 type structure (Pnma, Z = 4). The structure refinement for Ce 2 AuP 3 resulted in a = 774.14(6) pm, b = 421.11(4) pm, c = 1612.3(1) pm, R = 0.019 for 1410 structure factors and 38 variable parameters. For Pr 2 AuP 3 a residual of R = 0.024 was obtained. Nd 2 AuP 3 crystallizes with a monoclinic distortion of this structure: P2 1 /c, Z = 4, a = 416.14(4) pm, b = 768.87(6) pm, c = 1647.1(2) pm, β = 104.06(1) , R = 0.022 for 1361 F values and 56 variables. The near-neighbor coordinations of the two structures are nearly the same. In both structures the gold and phosphorus atoms form two-dimensionally infinite nets, where the gold atoms are tetrahedrally coordinated by phosphorus atoms with Au-P distances varying between 245.8 and 284.2 pm. Two thirds of the phosphorus atoms form pairs with single-bond distances varying between 217.7 and 218.9 pm. Thus, using oxidation numbers the structures can be rationalized with the formulas (Ln +3 ) 2 [AuP 3 ] -6 and (Ln +3 ) 2 Au +1 (P 2 ) -4 P -3 . Accordingly, La 2 AuP 3 is a diamagnetic semiconductor. Pr 2 AuP 3 is semi-conducting with an antiferromagnetic ground state, showing metamagnetism with a critical field of B c = 0.5(±0.1) T. In contrast, the cerium compound is a metallic conductor, even though its cell volume indicates that the cerium atoms are essentially trivalent, as is also suggested by the ferro- or ferrimagnetic behavior of the compound. (orig.)

Anisotropic-Cyclicgraphene: A New Two-Dimensional Semiconducting Carbon Allotrope

Directory of Open Access Journals (Sweden)

Marcin Maździarz

2018-03-01

Full Text Available A potentially new, single-atom thick semiconducting 2D-graphene-like material, called Anisotropic-cyclicgraphene , has been generated by the two stage searching strategy linking molecular and ab initio approach. The candidate was derived from the evolutionary-based algorithm and molecular simulations was then profoundly analysed using first-principles density functional theory from the structural, mechanical, phonon, and electronic properties point of view. The proposed polymorph of graphene (rP16-P1m1 is mechanically, dynamically, and thermally stable and can achieve semiconducting with a direct band gap of 0.829 eV.

Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

Science.gov (United States)

Tarsoly, Gergely; Pyo, Seungmoon

2018-06-01

We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

Intermetallic semiconducting films

CERN Document Server

Wieder, H H

1970-01-01

Intermetallic Semiconducting Films introduces the physics and technology of AшВv compound films. This material is a type of a polycrystalline semiconductor that is used for galvanomagnetic device applications. Such material has a high electron mobility that is ideal for generators and magnetoresistors. The book discusses the available references on the preparation and identification of the material. An assessment of its device applications and other possible use is also enumerated. The book describes the structures and physical parts of different films. A section of the book covers the three t

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

Science.gov (United States)

Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

2015-03-24

Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO2 transparent semiconducting films prepared by spray pyrolysis technique

International Nuclear Information System (INIS)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-01-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2 :Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2 :Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

Science.gov (United States)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-10-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

Assembly of ordered carbon shells on semiconducting nanomaterials

Science.gov (United States)

Sutter, Eli Anguelova; Sutter, Peter Werner

2012-10-02

In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

KAUST Repository

Sun, Ke

2015-03-11

Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g). © 2015, National Academy of Sciences. All rights reserved.

Itinerant magnetism in doped semiconducting β-FeSi₂ and CrSi₂.

Science.gov (United States)

Singh, David J; Parker, David

2013-12-17

Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β-FeSi₂ and CrSi₂ at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds.

A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP

International Nuclear Information System (INIS)

Shan, Y.Y.; Ling, C.C.; Fung, S.; Beling, C.D.; Zhao, Y.W.

2001-01-01

Positron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700 C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material. (orig.)

Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature

KAUST Repository

Al-Jawhari, Hala A.

2013-12-01

Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. © (2014) Trans Tech Publications, Switzerland.

Semiconducting states and transport in metallic armchair-edged graphene nanoribbons

International Nuclear Information System (INIS)

Chen Xiongwen; Wang Haiyan; Wan Haiqing; Zhou Guanghui; Song Kehui

2011-01-01

Based on the nonequilibrium Green's function method within the tight-binding approximation scheme, through a scanning tunneling microscopy (STM) model, we study the low-energy electronic states and transport properties of carbon chains in armchair-edged graphene nanoribbons (AGNRs). We show that semiconducting AGNRs possess only semiconducting chains, while metallic ones possess not only metallic chains but also unconventional semiconducting chains located at the 3jth (j≠0) column from the edge (the first chain) due to the vanishing of the metallic component in the electron wavefunction. The two types of states for carbon chains in a metallic AGNR system are demonstrated by different density of states and STM tunneling currents. Moreover, a similar phenomenon is predicted in the edge region of very wide AGNRs. However, there is remarkable difference in the tunneling current between narrow and wide ribbons.

Semiconducting silicon nanowires for biomedical applications

CERN Document Server

Coffer, JL

2014-01-01

Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei

2016-11-04

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei; Rose, Bradley Daniel; Liu, Yao; Nahid, Masrur M.; Gann, Eliot; Ly, Jack; Zhao, Wei; Rosa, Stephen J.; Russell, Thomas P.; Facchetti, Antonio; McNei, Christopher R.; Bredas, Jean-Luc; Briseno, Alejandro L.

2016-01-01

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

Science.gov (United States)

Peterson, George Glenn

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

Hydrothermal synthetic strategies of inorganic semiconducting nanostructures.

Science.gov (United States)

Shi, Weidong; Song, Shuyan; Zhang, Hongjie

2013-07-07

Because of their unique chemical and physical properties, inorganic semiconducting nanostructures have gradually played a pivotal role in a variety of research fields, including electronics, chemical reactivity, energy conversion, and optics. A major feature of these nanostructures is the quantum confinement effect, which strongly depends on their size, shape, crystal structure and polydispersity. Among all developed synthetic methods, the hydrothermal method based on a water system has attracted more and more attention because of its outstanding advantages, such as high yield, simple manipulation, easy control, uniform products, lower air pollution, low energy consumption and so on. Precise control over the hydrothermal synthetic conditions is a key to the success of the preparation of high-quality inorganic semiconducting nanostructures. In this review, only the representative hydrothermal synthetic strategies of inorganic semiconducting nanostructures are selected and discussed. We will introduce the four types of strategies based on exterior reaction system adjustment, namely organic additive- and template-free hydrothermal synthesis, organic additive-assisted hydrothermal synthesis, template-assisted hydrothermal synthesis and substrate-assisted hydrothermal synthesis. In addition, the two strategies based on exterior reaction environment adjustment, including microwave-assisted and magnetic field-assisted hydrothermal synthesis, will be also described. Finally, we conclude and give the future prospects of this research area.

Effect of sulfur addition on the transport properties of semiconducting iron phosphate glasses

Energy Technology Data Exchange (ETDEWEB)

El-Desoky, M.M. [Physics Department, Faculty of Science, Suez Canal University, Suez (Egypt); Ibrahim, F.A. [Department of Physics, Faculty of Education, Suez Canal University, Al-Arish (Egypt); Hassaan, M.Y. [Department of Physics, Faculty of Science, Al-Azhar University, Nasr City, 11884 Cairo (Egypt)

2011-08-15

The present paper focuses on a quantitative analysis of the metallic and semiconducting behavior of electrical resistivity in La{sub 0.91}Rb{sub 0.06}Mn{sub 0.94}O{sub 3} manganites. The contribution of inherent low-frequency acoustic phonons as well as high-frequency optical phonons, to the electron-phonon resistivity is estimated following Bloch-Gruneisen model. The computed phonon resistivity is compared with that of reported metallic resistivity, accordingly {rho}diff. [{rho}exp. - {l_brace}{rho}0 + {rho}e-ph (={rho}ac + {rho}op){r_brace}] have been analysed through electron-electron scattering. Also, the difference can be varies linearly with T{sup 4.5} in accordance with the electron-magnon scattering in the double exchange process. The results reveal important aspects transport mechanism as well as point out that it is not only dominated by electron-phonon scattering, but also by electron-electron and electron-magnon scattering process. Alternatively, in high temperature regime (T {>=} T{sub P}) the semiconducting nature is discussed with Mott's variable range hopping (VRH) and small polaron conduction (SPC) model. (authors)

Effect of sulfur addition on the transport properties of semiconducting iron phosphate glasses

International Nuclear Information System (INIS)

El-Desoky, M.M.; Ibrahim, F.A.; Hassaan, M.Y.

2011-01-01

The present paper focuses on a quantitative analysis of the metallic and semiconducting behavior of electrical resistivity in La 0.91 Rb 0.06 Mn 0.94 O 3 manganites. The contribution of inherent low-frequency acoustic phonons as well as high-frequency optical phonons, to the electron-phonon resistivity is estimated following Bloch-Gruneisen model. The computed phonon resistivity is compared with that of reported metallic resistivity, accordingly ρdiff. [ρexp. - {ρ0 + ρe-ph (=ρac + ρop)}] have been analysed through electron-electron scattering. Also, the difference can be varies linearly with T 4.5 in accordance with the electron-magnon scattering in the double exchange process. The results reveal important aspects transport mechanism as well as point out that it is not only dominated by electron-phonon scattering, but also by electron-electron and electron-magnon scattering process. Alternatively, in high temperature regime (T ≥ T P ) the semiconducting nature is discussed with Mott's variable range hopping (VRH) and small polaron conduction (SPC) model. (authors)

Carrier removal and defect behavior in p-type InP

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

On the Electrochemical Behavior of PVD Ti-Coated AISI 304 Stainless Steel in Borate Buffer Solution

Science.gov (United States)

Fattah-alhosseini, Arash; Elmkhah, Hassan; Attarzadeh, Farid Reza

2017-04-01

This work aims at studying the electrochemical behavior of annealed pure titanium (Ti) and nano-structured (NS) Ti coating in borate buffer solutions. Cathodic arc evaporation was successfully applied to deposit NS Ti coating. Samples were characterized by means of scanning electron microscope and x-ray diffraction. Potentiodynamic polarization tests, electrochemical impedance spectroscopy, and Mott-Schottky analysis were employed to discuss the electrochemical behavior of samples thoroughly. Electrochemical measurements showed that the deposited NS Ti coating offers a superior passivity in borate buffer solutions of pH 9.0 and 9.5. Mott-Schottky analysis revealed that all passive films are of n-type semiconducting nature in these alkaline solutions and the deposition process did not alter the semiconducting type of passive films formed on samples. Additionally, this analysis showed that the NS Ti coating possessed lower levels of donor densities. Finally, all electrochemical tests showed that passive behavior of the NS Ti samples was superior, mainly due to the formation of thicker and less defective passive films.

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Qin, Ruifeng [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Cao, Hongtao; Liang, Lingyan, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Liu, Caichi; Sun, Weizhong, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China)

2016-04-04

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and from 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

Tough, semiconducting polyethylene-poly(3-hexylthiophene) diblock copolymers

DEFF Research Database (Denmark)

Müller, C.; Goffri, S.; Breiby, Dag Werner

2007-01-01

Semiconducting diblock copolymers of polyethylene (PE) and regioregular poly(3-hexylthiophene) (P3HT) are demonstrated to exhibit a rich phase behaviour, judicious use of which permitted us to fabricate field-effect transistors that show saturated charge carrier mobilities, mu(FET), as high as 2 x...

Development of N- and P- Types of Semiconducting Polymers

Science.gov (United States)

2015-03-05

type, oligomeric donor monomers with fused thienobenzothiophene structures. These monomers are copolymerized with fluorinated thieno[3,4- b]thiophene...copolymerized with fluorinated thieno[3,4- b]thiophene ester to form a series of polymers which were investigated as donor materials in polymer/fullerene...effective but somewhat toxic drug, significantly lowered the dose of colistin required for killing bacteria and thus increased its safety. These

p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

Science.gov (United States)

Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

2014-11-25

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

The electrical properties of semiconducting vanadium phosphate glasses

International Nuclear Information System (INIS)

Moridi, G.R.; Hogarth, C.A.; Hekmat Shooar, N.H.

1984-01-01

Vanadium phosphate glasses are a group of oxide glasses which show the semiconducting behaviour. In contrast to the conventional glasses, the conduction mechanism in these glasses is electronic, rather than being ionic. Since 1954, when the first paper appeared on the semiconducting properties of these glasses, much work has been carried out on transition-metal-oxide glasses in general, and vanadium phosphate glasses in particular. The mechanism of conduction is basicaly due to the transport of electrons between the transition-metal ions in different valency states. In the present paper, we have reviewed the previous works on the electrical characteristics of P 2 O 5 -V 2 O 5 glasses and also discussed the current theoretical ideas relevant for the interpretation of the experimental data

Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

Science.gov (United States)

Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

2016-08-31

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

Semiconducting III-V compounds

CERN Document Server

Hilsum, C; Henisch, Heinz R

1961-01-01

Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

Synthesis and semiconducting properties of tin(II) sulfide: Application to photocatalytic degradation of Rhodamine B under sun light

Energy Technology Data Exchange (ETDEWEB)

Kabouche, S. [Laboratory of Electrochemistry-Corrosion, Metallurgy and Inorganic Chemistry, Faculty of Chemistry, U.S.T.H.B., BP 32, Algiers, 16111 (Algeria); Bellal, B. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of the Chemistry, U.S.T.H.B., BP 32, Algiers, 16111 (Algeria); Louafi, Y. [Laboratory of Electrochemistry-Corrosion, Metallurgy and Inorganic Chemistry, Faculty of Chemistry, U.S.T.H.B., BP 32, Algiers, 16111 (Algeria); Trari, M., E-mail: solarchemistry@gmail.com [Laboratory of Storage and Valorization of Renewable Energies, Faculty of the Chemistry, U.S.T.H.B., BP 32, Algiers, 16111 (Algeria)

2017-07-01

We have investigated the semiconducting and photoelectrochemical properties of SnS grown by a template-free chemical route using thiourea as precursor. Tin(II) sulfide is characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance and Raman spectroscopy. The X-ray diffraction indicates an orthorhombic SnS phase (SG: Pbnm) with a crystallite size of 52 nm while the optical measurements give a direct band gap of 1.33 eV. The Mott–Schottky plot exhibits a linear behavior, characteristic of n-type conductivity with a flat band potential of 0.19 V{sub SCE} and a donor density of 4.12 × 10{sup 18} cm{sup -3}. The electrochemical impedance spectroscopy (EIS) measured in the range (10{sup -2}–5 × 10{sup 4} Hz) shows one semicircle attributed to the bulk resistance (R{sub b} = 20.37 kΩ cm{sup 2}). The conduction band, located at 4.84 eV below vacuum, is made up of Sn{sup 2+:}5p while the valence band (6.17 eV) derives mainly from S{sup 2-}: 3p character. The energy band diagram, constructed from the photoelectrochemical characterization, predicts the photodegradation of Rhodamine B on SnS by H{sub 2}O{sub 2} generated photoelectrochemically. 88.46% of the initial concentration (10 mg L{sup -1}) disappears after adsorption and 4 h of exposure to solar light. The photoactivity is nearly restored during the second cycle and follows a second order kinetic with a rate constant of 1.55 × 10{sup -3} mg{sup -1} L min{sup -1}. - Highlights: • The semiconducting properties of SnS synthesized by chemical route are studied. • The n type conductivity is evidenced by chrono-amperometry and photoelectrochemistry. • The conduction band, located at 4.84 eV below vacuum, is made up of Sn{sup 2+}: 5p. • SnS was successfully used for the Rhodamine B oxidation under sunlight.

Anomalous X-ray scattering studies on semiconducting and metallic glasses

International Nuclear Information System (INIS)

Hosokawa, S.; Pilgrim, W.C.; Berar, J.F.; Kohara, S.

2012-01-01

In order to explore local- and intermediate-range atomic structures of several semiconducting and metallic glasses, anomalous X-ray scattering (AXS) experiments were performed using an improved detecting system suitable for third-generation synchrotron radiation facilities, and the obtained data were analyzed using reverse Monte Carlo (RMC) modelling to obtain partial structure factors and to construct three-dimensional atomic configurations of these glasses. Examples of GeSe 2 semiconducting and Pd 40 Ni 40 P 20 metallic glasses are demonstrated to exhibit the feasibility of the combination of AXS and RMC techniques. Importance of an additional combination with neutron scattering is also described for alloys containing light elements. (authors)

Itinerant magnetism in doped semiconducting β-FeSi2 and CrSi2

Science.gov (United States)

Singh, David J.; Parker, David

2013-01-01

Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β-FeSi2 and CrSi2 at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds. PMID:24343332

P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

KAUST Repository

Wang, Zhenwei

2018-03-11

Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

Semiconducting La{sub 2}AuP{sub 3}, the metallic conductor Ce{sub 2}AuP{sub 3}, and other rare-earth gold phosphides Ln{sub 2}AuP{sub 3} with two closely related crystal structures

Energy Technology Data Exchange (ETDEWEB)

Eschen, M.; Kotzyba, G.; Kuennen, B.; Jeitschko, W. [Anorganisch-Chemisches Inst. der Westfaelischen Wilhelms-Univ., Muenster (Germany)

2001-07-01

The compounds Ln{sub 2}AuP{sub 3} were synthesized by reaction of the elemental components in evacuated silica tubes. Their crystal structures were determined from single-crystal diffractometer data. The compounds with Ln = La, Ce, and Pr crystallize with an orthorhombic U{sub 2}NiC{sub 3} type structure (Pnma, Z = 4). The structure refinement for Ce{sub 2}AuP{sub 3} resulted in a = 774.14(6) pm, b = 421.11(4) pm, c = 1612.3(1) pm, R = 0.019 for 1410 structure factors and 38 variable parameters. For Pr{sub 2}AuP{sub 3} a residual of R = 0.024 was obtained. Nd{sub 2}AuP{sub 3} crystallizes with a monoclinic distortion of this structure: P2{sub 1}/c, Z = 4, a = 416.14(4) pm, b = 768.87(6) pm, c = 1647.1(2) pm, {beta} = 104.06(1) , R = 0.022 for 1361 F values and 56 variables. The near-neighbor coordinations of the two structures are nearly the same. In both structures the gold and phosphorus atoms form two-dimensionally infinite nets, where the gold atoms are tetrahedrally coordinated by phosphorus atoms with Au-P distances varying between 245.8 and 284.2 pm. Two thirds of the phosphorus atoms form pairs with single-bond distances varying between 217.7 and 218.9 pm. Thus, using oxidation numbers the structures can be rationalized with the formulas (Ln{sup +3}){sub 2}[AuP{sub 3}]{sup -6} and (Ln{sup +3}){sub 2}Au{sup +1}(P{sub 2}){sup -4}P{sup -3}. Accordingly, La{sub 2}AuP{sub 3} is a diamagnetic semiconductor. Pr{sub 2}AuP{sub 3} is semi-conducting with an antiferromagnetic ground state, showing metamagnetism with a critical field of B{sub c} = 0.5({+-}0.1) T. In contrast, the cerium compound is a metallic conductor, even though its cell volume indicates that the cerium atoms are essentially trivalent, as is also suggested by the ferro- or ferrimagnetic behavior of the compound. (orig.)

Electronic and elastic properties of new semiconducting oP12-type RuB2 and OsB2

International Nuclear Information System (INIS)

Hao Xianfeng; Xu Yuanhui; Gao Faming

2011-01-01

Using first-principles total energy calculations we investigate the structural, elastic and electronic properties of new hypothetical oP 12 -type phase RuB 2 and OsB 2 . The calculations indicate that the oP 12 -type phase RuB 2 and OsB 2 are thermodynamically and mechanically stable. Remarkably, the new phases RuB 2 and OsB 2 are predicted to be semiconductors, and the appearance of band gaps is ascribed to the enhanced B-B covalent hybridization. Compared to metallic oP 6 -type RuB 2 and OsB 2 phases, the new phases possess similar mechanical properties and hardness. The combination of the probability of tunable electronic properties, strong stiffness and high hardness make RuB 2 and OsB 2 attractive and interesting for advanced applications.

Electronic and elastic properties of new semiconducting oP(12)-type RuB(2) and OsB(2).

Science.gov (United States)

Hao, Xianfeng; Xu, Yuanhui; Gao, Faming

2011-03-30

Using first-principles total energy calculations we investigate the structural, elastic and electronic properties of new hypothetical oP(12)-type phase RuB(2) and OsB(2). The calculations indicate that the oP(12)-type phase RuB(2) and OsB(2) are thermodynamically and mechanically stable. Remarkably, the new phases RuB(2) and OsB(2) are predicted to be semiconductors, and the appearance of band gaps is ascribed to the enhanced B-B covalent hybridization. Compared to metallic oP(6)-type RuB(2) and OsB(2) phases, the new phases possess similar mechanical properties and hardness. The combination of the probability of tunable electronic properties, strong stiffness and high hardness make RuB(2) and OsB(2) attractive and interesting for advanced applications. © 2011 IOP Publishing Ltd

Dual Colorimetric and Fluorescent Authentication Based on Semiconducting Polymer Dots for Anticounterfeiting Applications.

Science.gov (United States)

Tsai, Wei-Kai; Lai, Yung-Sheng; Tseng, Po-Jung; Liao, Chia-Hsien; Chan, Yang-Hsiang

2017-09-13

Semiconducting polymer dots (Pdots) have recently emerged as a novel type of ultrabright fluorescent probes that can be widely used in analytical sensing and material science. Here, we developed a dual visual reagent based on Pdots for anticounterfeiting applications. We first designed and synthesized two types of photoswitchable Pdots by incorporating photochromic dyes with multicolor semiconducting polymers to modulate their emission intensities and wavelengths. The resulting full-color Pdot assays showed that the colorimetric and fluorescent dual-readout abilities enabled the Pdots to serve as an anticounterfeiting reagent with low background interference. We also doped these Pdots into flexible substrates and prepared these Pdots as inks for pen handwriting as well as inkjet printing. We further applied this reagent in printing paper and checks for high-security anticounterfeiting purposes. We believe that this dual-readout method based on Pdots will create a new avenue for developing new generations of anticounterfeiting technologies.

Voltage-Controlled Spray Deposition of Multiwalled Carbon Nanotubes on Semiconducting and Insulating Substrates

Science.gov (United States)

Maulik, Subhodip; Sarkar, Anirban; Basu, Srismrita; Daniels-Race, Theda

2018-05-01

A facile, cost-effective, voltage-controlled, "single-step" method for spray deposition of surfactant-assisted dispersed carbon nanotube (CNT) thin films on semiconducting and insulating substrates has been developed. The fabrication strategy enables direct deposition and adhesion of CNT films on target samples, eliminating the need for substrate surface functionalization with organosilane binder agents or metal layer coatings. Spray coating experiments on four types of sample [bare silicon (Si), microscopy-grade glass samples, silicon dioxide (SiO2), and polymethyl methacrylate (PMMA)] under optimized control parameters produced films with thickness ranging from 40 nm to 6 μm with substantial surface coverage and packing density. These unique deposition results on both semiconducting and insulator target samples suggest potential applications of this technique in CNT thin-film transistors with different gate dielectrics, bendable electronics, and novel CNT-based sensing devices, and bodes well for further investigation into thin-film coatings of various inorganic, organic, and hybrid nanomaterials on different types of substrate.

Logic circuits based on individual semiconducting and metallic carbon-nanotube devices

International Nuclear Information System (INIS)

Ryu, Hyeyeon; Kaelblein, Daniel; Ante, Frederik; Zschieschang, Ute; Kern, Klaus; Klauk, Hagen; Weitz, R Thomas; Schmidt, Oliver G

2010-01-01

Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produced as a mixture of semiconducting and metallic nanotubes. Since only semiconducting nanotubes yield transistors, the metallic nanotubes are typically not utilized. However, integrated circuits often require not only transistors, but also resistive load devices. Here we show that many of the metallic carbon nanotubes that are deposited on the substrate along with the semiconducting nanotubes can be conveniently utilized as load resistors with favorable characteristics for the design of integrated circuits. We also demonstrate the fabrication of arrays of transistors and resistors, each based on an individual semiconducting or metallic carbon nanotube, and their integration on glass substrates into logic circuits with switching frequencies of up to 500 kHz using a custom-designed metal interconnect layer.

Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

Science.gov (United States)

Cao, Xuan; Cao, Yu; Zhou, Chongwu

2016-01-26

Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

Fabrication of Completely Polymer-Based Solar Cells with p- and n-Type Semiconducting Block Copolymers with Electrically Inert Polystyrene

Directory of Open Access Journals (Sweden)

Eri Tomita

2018-02-01

Full Text Available It is widely recognized that fullerene derivatives show several advantages as n-type materials in photovoltaic applications. However, conventional [6,6]-phenyl-C61-butyric acid methyl ester (PCBM exhibits weak absorption in the visible region, and poor morphological stability, due to the facile aggregation. For further improvement of the device performance and durability, utilization of n-type polymeric materials instead of PCBM is considered to be a good way to solve the problems. In this study, we fabricated completely polymer-based solar cells utilizing p- and n-type block copolymers consisting of poly(3-hexylthiophene (P3HT and poly{[N,N′-bis(2-octyldodecylnaphthalene-1,4,5,8-bis(dicarboximide-2,6-diyl]-alt-5,5′-(2,2′-bithiophene} [P(NDI2OD-T2], respectively, containing common polystyrene (PSt inert blocks, which decreased the size of phase separated structures. Electron mobility in synthesized P(NDI2OD-T2-b-PSt film enhanced by a factor of 8 compared with homopolymer. The root mean square roughness of the blend film of two block copolymers (12.2 nm was decreased, compared with that of the simple homopolymers blend (18.8 nm. From the current density-voltage characteristics, it was confirmed that the introduction of PSt into both P3HT and P(NDI2OD-T2 improves short-circuit current density (1.16 to 1.73 mA cm−2 and power-conversion efficiency (0.24% to 0.32%. Better performance is probably due to the uniformity of the phase separation, and the enhancement of charge mobility.

Nano semiconducting materials

CERN Document Server

Saravanan, R

2016-01-01

The main focus of the present book is the characterization of a number of nano-semiconducting materials, using such techniques as powder X-ray diffraction, UV-visible spectrophotometry, Raman spectrometry, scanning electron microscopy, transmission electron microscopy and vibrating sample magnetometry. The materials studied include ZnS, TiO2, NiO, Ga doped ZnO, Mn doped SnO2, Mn doped CeO2 and Mn doped ZrO2.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

2013-01-01

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong

2013-09-26

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Enhanced H2S Sensing Performance of a p-type Semiconducting PdO-NiO Nanoscale Heteromixture

Science.gov (United States)

Balamurugan, C.; Jeong, Y. J.; Lee, D. W.

2017-10-01

Semiconducting nanocrystalline nickel oxide (NiO) and PdO-doped NiO heteromixture (2, 5 and 10 wt%) have been synthesized via a metal-citrate complex method. The obtained materials were further characterized using TG/DTA, FT-IR, UV-vis, XRD, XPS, BET/BJH, SEM and TEM analyses to determine their structural and morphological properties. The results indicated that the spherical, uniform PdO nanoparticles were densely deposited on the NiO surface mainly in diameters of 10-15 nm. Moreover, the existence of various defect states was also analyzed with the help of photoluminescence (PL) spectroscopy. The gas response characteristics of synthesized materials were evaluated in the presence and absence of toxic gases such as hydrogen sulfide (H2S), carbon monoxide (CO), liquid petroleum gas (LPG), and ethanol (C2H5OH). The experimental results revealed that the sensitivity and selectivity of the NiO-based sensor material are dependent on the weight% of PdO loading in the NiO nanopowder. Among the investigated compound, the 5 wt% PdO-doped NiO sensor material showed excellent sensitivity and selectivity to 100 ppm H2S with a fast response/recovery characteristics of 6 s and 10 s, respectively. Furthermore, the 5 wt% PdO-doped NiO based sensor showed a linear relationship between the different concentrations of H2S gas and a significantly higher response to H2S even at the low concentration of 20 ppm (43%) at 60 °C. The dominant H2S gas sensing mechanisms in the NiO and 5 wt% PdO-doped NiO nanomaterials are systematically discussed based on the obtained characterization results.

High-mobility ultrathin semiconducting films prepared by spin coating

Science.gov (United States)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Scanning microwave microscopy applied to semiconducting GaAs structures

Science.gov (United States)

Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

2018-02-01

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Development of p-type amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films and fabrication of pn hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India)

2014-07-01

Highlights: • Growth of p-type semiconducting amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films by co-sputtering. • Atomic percentage of Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films from the XPS analysis. • Variation of bandgap with boron concentration in Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films. • Demonstration of p–n hetero junctions fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au. - Abstract: Transparent conducting amorphous p type Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films were grown by RF magnetron co-sputtering at room temperature, using copper and boron targets in oxygen atmosphere. The structural, electrical as well as optical properties were studied. Composition of the films was analyzed by XPS. Amorphous structure of as deposited films was confirmed by GXRD. Surface morphology of the films was analyzed by AFM studies. p-Type nature and concentration of carriers were investigated by Hall effect measurement. Band gap of the films was found to increase with the atomic content of boron in the film. A p–n hetero junction using p-type Cu{sub 1−x}B{sub x}O{sub 2−δ} and n-type silicon was fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au which showed rectifying behavior. As deposited amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films with lower carrier concentration can be used as a channel layer for thin film transistors.

Superconductivity in an Inhomogeneous Bundle of Metallic and Semiconducting Nanotubes

Directory of Open Access Journals (Sweden)

Ilya Grigorenko

2013-01-01

Full Text Available Using Bogoliubov-de Gennes formalism for inhomogeneous systems, we have studied superconducting properties of a bundle of packed carbon nanotubes, making a triangular lattice in the bundle's transverse cross-section. The bundle consists of a mixture of metallic and doped semiconducting nanotubes, which have different critical transition temperatures. We investigate how a spatially averaged superconducting order parameter and the critical transition temperature depend on the fraction of the doped semiconducting carbon nanotubes in the bundle. Our simulations suggest that the superconductivity in the bundle will be suppressed when the fraction of the doped semiconducting carbon nanotubes will be less than 0.5, which is the percolation threshold for a two-dimensional triangular lattice.

GeP and (Ge1−xSnx)(P1−yGey) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

International Nuclear Information System (INIS)

Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

2015-01-01

GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge 0.93(3) P 0.95(1) Sn 0.12(3) : a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder

p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

Science.gov (United States)

Irwin, Michael D.; Buchholz, D. Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J.

2008-01-01

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

Electronic and elastic properties of new semiconducting oP{sub 12}-type RuB{sub 2} and OsB{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Hao Xianfeng; Xu Yuanhui; Gao Faming, E-mail: xfhao1980@yahoo.com.cn [Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China)

2011-03-30

Using first-principles total energy calculations we investigate the structural, elastic and electronic properties of new hypothetical oP{sub 12}-type phase RuB{sub 2} and OsB{sub 2}. The calculations indicate that the oP{sub 12}-type phase RuB{sub 2} and OsB{sub 2} are thermodynamically and mechanically stable. Remarkably, the new phases RuB{sub 2} and OsB{sub 2} are predicted to be semiconductors, and the appearance of band gaps is ascribed to the enhanced B-B covalent hybridization. Compared to metallic oP{sub 6}-type RuB{sub 2} and OsB{sub 2} phases, the new phases possess similar mechanical properties and hardness. The combination of the probability of tunable electronic properties, strong stiffness and high hardness make RuB{sub 2} and OsB{sub 2} attractive and interesting for advanced applications.

Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors.

Science.gov (United States)

Kim, Min Je; Jung, A-Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon-Mi; Nguyen, Hieu Dinh; Yang, Jeehye; Lee, Kyung-Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Choi, Jong-Ho; Kim, BongSoo; Cho, Jeong Ho

2017-11-22

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10 7 . The highest hole mobility of 1.51 cm 2 V -1 s -1 and the highest electron mobility of 0.85 cm 2 V -1 s -1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Science.gov (United States)

Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

2017-06-01

Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

Percolation model for a selective response of the resistance of composite semiconducting np systems with respect to reducing gases

Science.gov (United States)

Russ, Stefanie

2014-08-01

It is shown that a two-component percolation model on a simple cubic lattice can explain an experimentally observed behavior [Savage et al., Sens. Actuators B 79, 17 (2001), 10.1016/S0925-4005(01)00843-7; Sens. Actuators B 72, 239 (2001)., 10.1016/S0925-4005(00)00676-6], namely, that a network built up by a mixture of sintered nanocrystalline semiconducting n and p grains can exhibit selective behavior, i.e., respond with a resistance increase when exposed to a reducing gas A and with a resistance decrease in response to another reducing gas B. To this end, a simple model is developed, where the n and p grains are simulated by overlapping spheres, based on realistic assumptions about the gas reactions on the grain surfaces. The resistance is calculated by random walk simulations with nn, pp, and np bonds between the grains, and the results are found in very good agreement with the experiments. Contrary to former assumptions, the np bonds are crucial to obtain this accordance.

Synthesis and Applications of Semiconducting Graphene

Directory of Open Access Journals (Sweden)

Shahrima Maharubin

2016-01-01

Full Text Available Semimetal-to-semiconductor transition in graphene can bestow graphene with numerous novel and enhanced structural, electrical, optical, and physicochemical characteristics. The scope of graphene and its prospective for an array of implications could be significantly outspread by this transition. In consideration of the recent advancements of semiconducting graphene, this article widely reviews the properties, production, and developing operations of this emergent material. The comparisons among the benefits and difficulties of current methods are made, intending to offer evidences to develop novel and scalable synthesis approaches. The emphasis is on the properties and applications resulting from various conversion methods (doping, controlled reduction, and functionalization, expecting to get improved knowledge on semiconducting graphene materials. Intending to motivate further efficient implications, the mechanisms leading to their beneficial usages for energy conversion and storage are also emphasized.

High-mobility ultrathin semiconducting films prepared by spin coating.

Science.gov (United States)

Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

2004-03-18

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

1/f noise in metallic and semiconducting carbon nanotubes

Science.gov (United States)

Reza, Shahed; Huynh, Quyen T.; Bosman, Gijs; Sippel-Oakley, Jennifer; Rinzler, Andrew G.

2006-11-01

The charge transport and noise properties of three terminal, gated devices containing multiple single-wall metallic and semiconducting carbon nanotubes were measured at room temperature. Applying a high voltage pulsed bias at the drain terminal the metallic tubes were ablated sequentially, enabling the separation of measured conductance and 1/f noise into metallic and semiconducting nanotube contributions. The relative low frequency excess noise of the metallic tubes was observed to be two orders of magnitude lower than that of the semiconductor tubes.

Ohmic contacts to semiconducting diamond

Science.gov (United States)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array.

Science.gov (United States)

Otsuka, Keigo; Inoue, Taiki; Maeda, Etsuo; Kometani, Reo; Chiashi, Shohei; Maruyama, Shigeo

2017-11-28

Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

Fabrication and characterization of inverted organic solar cells using shuttle cock-type metal phthalocyanine and PCBM:P3HT

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Atsushi, E-mail: suzuki@mat.usp.ac.jp; Furukawa, Ryo, E-mail: suzuki@mat.usp.ac.jp; Akiyama, Tsuyoshi, E-mail: suzuki@mat.usp.ac.jp; Oku, Takeo, E-mail: suzuki@mat.usp.ac.jp [Department of Materials Science, The University of Shiga Prefecture 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

2015-02-27

Inverted organic solar cells using shuttle cock-type phthalocyanine, semiconducting polymer and fullerenes were fabricated and characterized. Photovoltaic and optical properties of the solar cells with inverted structures were investigated by optical absorption, current density-voltage characteristics. The photovoltaic properties of the tandem organic solar cell using titanyl phthalocyanine, vanadyl phthalocyanine, poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl C{sub 61}-butyric acid methyl ester (PCBM) were improved. Effect of annealing and solvent treatment on surface morphologies of the active layer was investigated. The photovoltaic mechanisms, energy levels and band gap of active layers were discussed for improvement of the photovoltaic performance.

Fabrication and characterization of inverted organic solar cells using shuttle cock-type metal phthalocyanine and PCBM:P3HT

International Nuclear Information System (INIS)

Suzuki, Atsushi; Furukawa, Ryo; Akiyama, Tsuyoshi; Oku, Takeo

2015-01-01

Inverted organic solar cells using shuttle cock-type phthalocyanine, semiconducting polymer and fullerenes were fabricated and characterized. Photovoltaic and optical properties of the solar cells with inverted structures were investigated by optical absorption, current density-voltage characteristics. The photovoltaic properties of the tandem organic solar cell using titanyl phthalocyanine, vanadyl phthalocyanine, poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl C 61 -butyric acid methyl ester (PCBM) were improved. Effect of annealing and solvent treatment on surface morphologies of the active layer was investigated. The photovoltaic mechanisms, energy levels and band gap of active layers were discussed for improvement of the photovoltaic performance

Diamond semiconducting devices

International Nuclear Information System (INIS)

Polowczyk, M.; Klugmann, E.

1999-01-01

Many efforts to apply the semiconducting diamond for construction of electronic elements: resistors, thermistors, photoresistors, piezoresistors, hallotrons, pn diodes, Schottky diodes, IMPATT diodes, npn transistor, MESFETs and MISFETs are reviewed. Considering the possibilities of acceptor and donor doping, electrical resistivity and thermal conductivity of diamond as well as high electric-field breakdown points, that diamond devices could be used at about 30-times higher frequency and more then 8200 times power than silicon devices. Except that, due to high heat resistant of diamond, it is concluded that diamond devices can be used in environment at high temperature, range of 600 o C. (author)

Semiconducting compounds and devices incorporating same

Science.gov (United States)

Marks, Tobin J.; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

2016-01-19

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

Science.gov (United States)

Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

2017-07-01

Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

International Nuclear Information System (INIS)

He, Guan-Ru; Lin, Yow-Jon; Chang, Hsing-Cheng; Chen, Ya-Hui

2012-01-01

The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H 2 O 2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H 2 O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSi x O y layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H 2 O 2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiO x layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation. - Highlights: ► The electrical properties of n-ZnO/p-Si heterojunction diodes were researched. ► The n-ZnO/p-Si diode without H 2 O 2 treatment showed a poor rectifying behavior. ► The n-ZnO/H 2 O 2 -treated p-Si diode showed a good rectifying behavior. ► The enhanced responsivity can be interpreted by the device rectifying performance.

Multicomponent semiconducting polymer systems with low crystallization-induced percolation threshold

DEFF Research Database (Denmark)

Goffri, S.; Müller, C.; Stingelin-Stutzmann, N.

2006-01-01

of the two components, during which the semiconductor is predominantly expelled to the surfaces of cast films, we can obtain vertically stratified structures in a one-step process. Incorporating these as active layers in polymer field-effect transistors, we find that the concentration of the semiconductor......–crystalline/semiconducting–insulating multicomponent systems offer expanded flexibility for realizing high-performance semiconducting architectures at drastically reduced materials cost with improved mechanical properties and environmental stability, without the need to design all performance requirements into the active semiconducting polymer...

Behavioral economics survey of patients with type 1 and type 2 diabetes

Directory of Open Access Journals (Sweden)

Emoto N

2015-05-01

Full Text Available Naoya Emoto,1 Fumitaka Okajima,1 Hitoshi Sugihara,2 Rei Goto3,4 1Division of Endocrinology, Department of Medicine, Nippon Medical School Chiba Hokusoh Hospital, Chiba, 2Department of Endocrinology, Diabetes and Metabolism, Graduate School of Medicine, Nippon Medical School, Tokyo, 3Hakubi Center of Advanced Research, Kyoto University, Kyoto, 4Graduate School of Economics, Kyoto University, Kyoto, Japan Background: Adherence to treatment and the metabolic control of diabetes are challenging in many patients with diabetes. The theory of neuroeconomics can provide important clues for understanding unreasonable human behavior concerning decisions between outcomes occurring at different time points.  Objective: We investigated patients with type 1 and type 2 diabetes to determine whether patients who are at a risk of developing complications are less risk averse. We also examined whether patients with type 1 and type 2 diabetes have different behavioral traits in decision making under risk.  Methods: We conducted a behavioral economics survey of 219 outpatients, 66 with type 1 diabetes and 153 with type 2 diabetes. All patients had been referred by general practitioners or other departments in the hospital. At the time of the survey, levels of hemoglobin A1c were not significantly different between patients with type 1 and type 2 diabetes.  Results: Patients with type 2 diabetes showed a lower response rate to the survey compared with patients with type 1 diabetes (71.9% vs 87.9%, P<0.01. Logistic regression analysis indicated that diabetic retinopathy was negatively associated with risk averse in pricing of hypothetical lotteries, myopic time preference, willingness to pay for preventive medicine, and levels of satisfaction with life. Diabetic nephropathy was also negatively associated with risk averse in pricing of hypothetical lotteries. Detailed analysis revealed that a lower proportion of patients with type 2 diabetes (22.7% were categorized

Synthesis, structural and semiconducting properties of Ba(Cu1/3 Sb2/3)O3-PbTiO3 solid solutions

Science.gov (United States)

Singh, Chandra Bhal; Kumar, Dinesh; Prashant, Verma, Narendra Kumar; Singh, Akhilesh Kumar

2018-05-01

We report the synthesis and properties of a new solid solution 0.05Ba(Cu1/3Sb2/3)O3-0.95PbTiO3 (BCS-PT) which shows the semiconducting properties. In this study, we have designed new perovskite-type (ABO3) solid solution of BCS-PT that have tunable optical band gap. BCS-PT compounds were prepared by conventional solid-state reaction method and their structural, micro-structural and optical properties were analyzed. The calcination temperature for BCS-PT solid solutions has been optimized to obtain a phase pure system. The Reitveld analysis of X-ray data show that all samples crystallize in tetragonal crystal structure with space group P4mm. X-ray investigation revealed that increase in calcination temperature led to increase of lattice parameter `a' while `c' parameter value lowered. The band gap of PbTiO3 is reduced from 3.2 eV to 2.8 eV with BCS doping and with increasing calcination temperature it further reduces to 2.56 eV. The reduced band gap indicated that the compounds are semiconducting and can be used for photovoltaic device applications.

Structural Ordering of Semiconducting Polymers and Small-Molecules for Organic Electronics

Science.gov (United States)

O'Hara, Kathryn Allison

Semiconducting polymers and small-molecules can be readily incorporated into electronic devices such as organic photovoltaics (OPVs), thermoelectrics (OTEs), organic light emitting diodes (OLEDs), and organic thin film transistors (OTFTs). Organic materials offer the advantage of being processable from solution to form flexible and lightweight thin films. The molecular design, processing, and resulting thin film morphology of semiconducting polymers drastically affect the optical and electronic properties. Charge transport within films of semiconducting polymers relies on the nanoscale organization to ensure electronic coupling through overlap of molecular orbitals and to provide continuous transport pathways. While the angstrom-scale packing details can be studied using X-ray scattering methods, an understanding of the mesoscale, or the length scale over which smaller ordered regions connect, is much harder to achieve. Grain boundaries play an important role in semiconducting polymer thin films where the average grain size is much smaller than the total distance which charges must traverse in order to reach the electrodes in a device. The majority of semiconducting polymers adopt a lamellar packing structure in which the conjugated backbones align in parallel pi-stacks separated by the alkyl side-chains. Only two directions of transport are possible--along the conjugated backbone and in the pi-stacking direction. Currently, the discussion of transport between crystallites is centered around the idea of tie-chains, or "bridging" polymer chains connecting two ordered regions. However, as molecular structures become increasingly complex with the development of new donor-acceptor copolymers, additional forms of connectivity between ordered domains should be considered. High resolution transmission electron microscopy (HRTEM) is a powerful tool for directly imaging the crystalline grain boundaries in polymer and small-molecule thin films. Recently, structures

Construction of a photovoltaic cell based on the photoelectrochemistry of organic dyes at transparent semi-conducting electrodes. Final report

Energy Technology Data Exchange (ETDEWEB)

Nasielski, J; Kirsch-De Mesmaeker, A

1982-01-01

It is shown that the study of the photoelectrochemical mechanisms of different dye-reductant systems at transparent semi-conducting bubbling gas electrodes, coupled with a detailed analysis of the photovoltammetric curves, allows: a deeper insight into the operation principles of the corresponding dye photogalvanic cells; prediction of the parameters important for optimizing the cell operation; and working out of strategies for improving the cell output. In order to compare the behaviors of an adsorbed type dye (rhodamine-hydroquinone) with a solution type dye in a photogalvanic cell, the thionine-Fe/sup 2 +/ system was examined, including a detailed kinetic analysis of the photocurrents at the bubbling gas electrode as a function of several parameters. Photoelectrochemical mechanisms related to the sensitization and supersensitization in this system have thus been determined. Photoelectrochemical methods were applied to analyze other dye-reductant systems. The photoelectrochemisty of three triphenyl-methanes, methyl violet, crystal violet, and malachite green were examined at the bubbling gas electrode. These dyes produce photocurrents originating from the adsorbed molecules and behave very much like rhodamine. The photoelectrochemical behavior of the erythrosine-hydroquinone couple is also examined. For constructing photogalvanic cells, the CdS-on-SnO/sub 2/-cysteine system is found promising. (LEW)

An alternative approach to charge transport in semiconducting electrodes

Science.gov (United States)

Thomchick, J.; Buoncristiani, A. M.

1980-01-01

The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

Guided Growth of Horizontal p-Type ZnTe Nanowires

Science.gov (United States)

2016-01-01

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

Effects of Rh on the thermoelectric performance of the p-type Zr0.5Hf0.5Co1-xRhxSb0.99Sn0.01 half-Heusler alloys

International Nuclear Information System (INIS)

Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

2010-01-01

We show that Rh substitution at the Co site in Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 (0≤x≤1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr 0.5 Hf 0.5 RhSb 0.99 Sn 0.01 . The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 half-Heusler materials prepared by solid state reaction at 1173 K.

Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

Energy Technology Data Exchange (ETDEWEB)

Xing, Juanjuan, E-mail: xingjuanjuan@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Takeguchi, Masaki [Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Hashimoto, Ayako [Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Global Research Center for Environment and Energy Based on Nanomaterials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Cao, Junyu; Ye, Jinhua [International Center for Materials Nanoarchitectonics (WPI-MANA), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-04-21

Photovoltaic behavior of a CaFe{sub 2}O{sub 4}/ZnFe{sub 2}O{sub 4} p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

Preparation of n- and p-InP films by PH{sub 3} treatment of electrodeposited In layers

Energy Technology Data Exchange (ETDEWEB)

Cattarin, S.; Musiani, M. [C.N.R., Padova (Italy). Istituto di Polarografia ed Elettrochimica Preparativa; Casellato, U.; Rossetto, G. [C.N.R., Padova (Italy). Istituto di Chimica e Tecnologie Inorganische e dei Materiali Avanzati; Razzini, G. [Politecnico di Milano (Italy). Dipt. di Chimica Fisica Applicata; Decker, F.; Scrosati, B. [Univ. La Sapienza, Roma (Italy). Dipt. di Chimica

1995-04-01

InP is among the few semiconducting materials with the potential for excellence in several applications, including solar energy conversion. Thin InP layers have been prepared by electrodeposition of In films on Ti substrates (ca. 2 mg/cm{sup 2} of In) and their annealing in PH{sub 3} flow. The obtained material, characterized by scanning electron microscopy-energy dispersive X-ray analysis and X-ray diffraction techniques, shows uneven substrate coverage but good crystallinity. Photoelectrochemical investigations in acidic polyiodide medium show significant n-type photoactivity for the samples prepared from a nominally pure In layer. A p-type photoactivity is obtained depositing a small amount of Zn on top of the In layer prior to annealing. Results are compared with those obtained preparing InP layers on Ti by a conventional metallorganic chemical vapor deposition technique.

Controllable synthesis of p-type Cu{sub 2}S nanowires for self-driven NIR photodetector application

Energy Technology Data Exchange (ETDEWEB)

Wu, Chun-Yan, E-mail: cywu@hfut.edu.cn; Pan, Zhi-Qiang; Liu, Zhu; Wang, You-Yi [Hefei University of Technology, School of Electronic Science and Applied Physics (China); Liang, Feng-Xia [Hefei University of Technology, School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices (China); Yu, Yong-Qiang; Wang, Li; Luo, Lin-Bao, E-mail: luolb@hfut.edu.cn [Hefei University of Technology, School of Electronic Science and Applied Physics (China)

2017-02-15

Face-centered cubic Cu{sub 2}S nanowires with length of up to 50 μm and diameters in the range of 100–500 nm are synthesized on Si substrates through the chemical vapor deposition method using a mixed gas of Ar and H{sub 2} as the carrier gas under a chamber pressure of about 700 Torr. It was found that the growth of quasi 1D nanostructure followed a typical vapor-liquid-solid (VLS) mechanism in which the element Cu was reduced by H{sub 2} as the catalyst. The as-synthesized Cu{sub 2}S nanowires exhibited typical p-type semiconducting characteristics with a conductivity of about 600 S cm{sup −1} and a hole mobility (μ{sub h}) of about 72 cm{sup 2} V{sup −1} s{sup −1}. Further study reveals that p-Cu{sub 2}S nanowires/n-Si heterojunction exhibits distinct rectifying characteristics with a turn-on voltage of ~0.6 V and a rectification ratio of ~300 at ±1 V in the dark and a pronounced photovoltaic behavior with an open circuit voltage (V{sub oc}) of 0.09 V and a short circuit current (I{sub sc}) of 65 nA when illuminated by the NIR light (790 nm, 0.35 mW cm{sup −1}), giving rise to a responsivity (R) about 0.8 mA W{sup −1} and specific detectivity (D*) 6.7 × 10{sup 10} cm Hz{sup 1/2} W{sup −1} at zero bias, which suggests the potential of as-synthesized Cu{sub 2}S nanowires applied in the field of self-driven NIR photodetector.

Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

Science.gov (United States)

Grodzicki, M.; Mazur, P.; Ciszewski, A.

2018-05-01

The p-GaN(0 0 0 1) crystal with a relatively low acceptor concentration of 5 × 1016 cm-3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The p-GaN(0 0 0 1)-(1 × 1) surface is achieved by thermal cleaning. N+-ion bombardment by a 200 eV ion beam changes the surface stoichiometry, enriches it with nitrogen, and disorders it. Such modified surface layer inverts its semiconducting character from p- into n-type. The electron affinity for the already cleaned p-GaN surface and that just after bombardment shows a shift from 2.2 eV to 3.2 eV, as well as an increase of band bending at the vacuum/surface interface from 1.4 eV to 2.5 eV. Proper post-bombardment heating of the sample restores the initial atomic order of the modified layer, leaving its n-type semiconducting character unchanged. The results of the measurements are discussed based on two types of surface states concepts.

Pharmacologic Treatment Assigned for Niemann Pick Type C1 Disease Partly Changes Behavioral Traits in Wild-Type Mice.

Science.gov (United States)

Schlegel, Victoria; Thieme, Markus; Holzmann, Carsten; Witt, Martin; Grittner, Ulrike; Rolfs, Arndt; Wree, Andreas

2016-11-09

Niemann-Pick Type C1 (NPC1) is an autosomal recessive inherited disorder characterized by accumulation of cholesterol and glycosphingolipids. Previously, we demonstrated that BALB/c-npc1 nih Npc1 -/- mice treated with miglustat, cyclodextrin and allopregnanolone generally performed better than untreated Npc1 -/- animals. Unexpectedly, they also seemed to accomplish motor tests better than their sham-treated wild-type littermates. However, combination-treated mutant mice displayed worse cognition performance compared to sham-treated ones. To evaluate effects of these drugs in healthy BALB/c mice, we here analyzed pharmacologic effects on motor and cognitive behavior of wild-type mice. For combination treatment mice were injected with allopregnanolone/cyclodextrin weekly, starting at P7. Miglustat injections were performed daily from P10 till P23. Starting at P23, miglustat was embedded in the chow. Other mice were treated with miglustat only, or sham-treated. The battery of behavioral tests consisted of accelerod, Morris water maze, elevated plus maze, open field and hot-plate tests. Motor capabilities and spontaneous motor behavior were unaltered in both drug-treated groups. Miglustat-treated wild-type mice displayed impaired spatial learning compared to sham- and combination-treated mice. Both combination- and miglustat-treated mice showed enhanced anxiety in the elevated plus maze compared to sham-treated mice. Additionally, combination treatment as well as miglustat alone significantly reduced brain weight, whereas only combination treatment reduced body weight significantly. Our results suggest that allopregnanolone/cyclodextrin ameliorate most side effects of miglustat in wild-type mice.

Pharmacologic Treatment Assigned for Niemann Pick Type C1 Disease Partly Changes Behavioral Traits in Wild-Type Mice

Directory of Open Access Journals (Sweden)

Victoria Schlegel

2016-11-01

Full Text Available Niemann-Pick Type C1 (NPC1 is an autosomal recessive inherited disorder characterized by accumulation of cholesterol and glycosphingolipids. Previously, we demonstrated that BALB/c-npc1nihNpc1−/− mice treated with miglustat, cyclodextrin and allopregnanolone generally performed better than untreated Npc1−/− animals. Unexpectedly, they also seemed to accomplish motor tests better than their sham-treated wild-type littermates. However, combination-treated mutant mice displayed worse cognition performance compared to sham-treated ones. To evaluate effects of these drugs in healthy BALB/c mice, we here analyzed pharmacologic effects on motor and cognitive behavior of wild-type mice. For combination treatment mice were injected with allopregnanolone/cyclodextrin weekly, starting at P7. Miglustat injections were performed daily from P10 till P23. Starting at P23, miglustat was embedded in the chow. Other mice were treated with miglustat only, or sham-treated. The battery of behavioral tests consisted of accelerod, Morris water maze, elevated plus maze, open field and hot-plate tests. Motor capabilities and spontaneous motor behavior were unaltered in both drug-treated groups. Miglustat-treated wild-type mice displayed impaired spatial learning compared to sham- and combination-treated mice. Both combination- and miglustat-treated mice showed enhanced anxiety in the elevated plus maze compared to sham-treated mice. Additionally, combination treatment as well as miglustat alone significantly reduced brain weight, whereas only combination treatment reduced body weight significantly. Our results suggest that allopregnanolone/cyclodextrin ameliorate most side effects of miglustat in wild-type mice.

Regulatory focus and adherence to self-care behaviors among adults with type 2 diabetes.

Science.gov (United States)

Avraham, Rinat; Van Dijk, Dina; Simon-Tuval, Tzahit

2016-09-01

The aims of this study were, first, to test the association between regulatory focus of adults with type 2 diabetes and their adherence to two types of self-care behaviors - lifestyle change (e.g. physical activity and diet) and medical care regimens (blood-glucose monitoring, foot care and medication usage). Second, to explore whether a fit between the message framing and patients' regulatory focus would improve their intentions to adhere specifically when the type of behavior fits the patients' regulatory focus as well. A cross-sectional study was conducted among 130 adults with type 2 diabetes who were hospitalized in an academic medical center. The patients completed a set of questionnaires that included their diabetes self-care activities, regulatory focus, self-esteem and demographic, socioeconomic and clinical data. In addition, participants were exposed to either a gain-framed or a loss-framed message, and were then asked to indicate their intention to improve adherence to self-care behaviors. A multivariable linear regression model revealed that promoters reported higher adherence to lifestyle change behaviors than preventers did (B = .60, p = .028). However, no effect of regulatory focus on adherence to medical care regimens was found (B = .46, p = .114). In addition, preventers reported higher intentions to adhere to medical care behaviors when the message framing was congruent with prevention focus (B = 1.16, p = .023). However, promoters did not report higher intentions to adhere to lifestyle behaviors when the message framing was congruent with promotion focus (B = -.16, p = .765). These findings justify the need to develop tailor-made interventions that are adjusted to both patients' regulatory focus and type of health behavior.

Hexagonal type Ising nanowire with mixed spins: Some dynamic behaviors

International Nuclear Information System (INIS)

Kantar, Ersin; Kocakaplan, Yusuf

2015-01-01

The dynamic behaviors of a mixed spin (1/2–1) hexagonal Ising nanowire (HIN) with core–shell structure in the presence of a time dependent magnetic field are investigated by using the effective-field theory with correlations based on the Glauber-type stochastic dynamics (DEFT). According to the values of interaction parameters, temperature dependence of the dynamic magnetizations, the hysteresis loop areas and the dynamic correlations are investigated to characterize the nature (first- or second-order) of the dynamic phase transitions (DPTs). Dynamic phase diagrams, including compensation points, are also obtained. Moreover, from the thermal variations of the dynamic total magnetization, the five compensation types can be found under certain conditions, namely the Q-, R-, S-, P-, and N-types. - Highlights: • Dynamic behaviors of mixed spin HIN system are obtained within the EFT. • The system exhibits i, p and nm fundamental phases. • The dynamic phase diagrams are presented in (h, T), (D, T), (Δ S , T) and (r, T) planes. • The dynamic phase diagrams exhibit the dynamic tricritical point (TCP). • Different dynamic compensation types are obtained

Reducing and preventing internalizing and externalizing behavior problems in children with type 1 diabetes: a randomized controlled trial of the Triple P-Positive Parenting Program.

Science.gov (United States)

Westrupp, E M; Northam, E; Lee, K J; Scratch, S E; Cameron, F

2015-11-01

Children with type 1 diabetes are at increased risk of mental health problems, which in turn are associated with poor glycemic control, diabetes-related complications, and long-term psychiatric morbidity. We tested the efficacy of the Triple P-Positive Parenting Program in reducing or preventing mental health problems and improving glycemic control in children with type 1 diabetes in a randomized controlled trial. Participants were recruited from the Diabetes Clinic, Royal Children's Hospital, Melbourne, Australia, and randomized to Triple P or standard diabetes care. The primary outcome was child internalizing and externalizing behavior problems 3 and 12 months postrandomization. Secondary outcomes were glycemic control, parent mental health, parenting skills, and family functioning at 3 and 12 months, and glycemic control at 24 months. A total of 76 participants were randomized (38 to intervention and 38 to control), 60 completed 3-month, and 57 completed 12-month assessments. Benefits of Triple P were evident at 3 months for parent mental health, parenting skills, and family functioning (p externalizing behavior problems indicated greater improvements in child mental health, parent mental health, parenting skills, and diabetes family conflict (p parenting self-efficacy at 3 months. Improvements in parent mental health and parenting competency associated with Triple P were sustained to 12 months for children with pre-existing mental health problems. This study provides some support for the efficacy of Triple P in improving parent and family outcomes, and reducing child internalizing and externalizing behavior problems primarily in children who have pre-existing mental health problems. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Hall-effect electric fields in semiconducting rings. II

International Nuclear Information System (INIS)

Gorodzha, L.V.; Emets, Yu.P.; Stril'ko, S.I.

1987-01-01

A calculation is presented for the current density distribution in a semiconducting ring with two electrodes symmetrically located on the outer boundary (system II, Fig. 1). The difference between this electrode position and that on the ring considered previously (system I) leads to substantial changes in the shape of the electric field

Perylene diimide: Synthesis, fabrication and temperature dependent electrical characterization of heterojunction with p-silicon

Energy Technology Data Exchange (ETDEWEB)

Tahir, Muhammad [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology Topi, KPK 23640 (Pakistan); Department of Physics, Abdul Wali Khan University Mardan, 23200 KPK (Pakistan); Sayyad, Muhammad Hassan; Wahab, Fazal [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology Topi, KPK 23640 (Pakistan); Aziz, Fakhra, E-mail: fakhra69@yahoo.com [Department of Electronics, Jinnah College for Women, University of Peshawar, Peshawar 25120 (Pakistan); Shahid, Muhammad; Munawar, Munawar Ali [Institute of Chemistry, University of the Punjab, Lahore 54000 (Pakistan)

2013-10-01

A novel, n-type, organic semiconductor N-Butyl-N′-(6-hydroxyhexyl)perylene-3,4,9,10-tetracarboxylic acid diimide (N-BuHHPDI) has been successfully synthesized in high yield. The compound has been characterized by atomic force microscopy (AFM) to understand the morphological properties of a new n-type organic semiconducting material. A 120 nm thin film of N-BuHHPDI has been sandwiched between Al and p-Si to form Al/N-BuHHPDI/p-Si device using the vacuum thermal evaporation technique. The electrical properties of sandwich type Al/N-BuHHPDI/p-Si device have been investigated. The current voltage (I–V) characteristics of the device, in dark, have been measured in the temperature range of 300–330 K. At room temperature, the device exhibits rectifying behavior with a rectification ratio of 51.5 at ±6.8 V. The device parameters such as ideality factor, barrier height, series and shunt resistances have been extracted using the conventional I–V characterization method. The effect of temperature on these parameters is also studied. Alternative electrical characterization methods such as Cheung's functions and Norde's techniques have been employed to measure the device parameters for comparison. The conduction mechanisms are investigated through the interface of N-BuHHPDI and p-Si.

Fabrication of p-type porous GaN on silicon and epitaxial GaN

OpenAIRE

Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

2013-01-01

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

Dietary Behaviors among Patients with Type 2 Diabetes Mellitus in Yogyakarta, Indonesia

Directory of Open Access Journals (Sweden)

Yanuar Primanda

2011-07-01

Full Text Available Purpose: To describe dietary behaviors and examine relationships between selected factors and dietary behaviors among type 2 diabetes mellitus (T2DM patients in Yogyakarta, Indonesia.Method: Seventy T2DM patients from a hospital in Yogyakarta who met the inclusion criteria were recruited. Patient’s dietary behaviors were measured by the Dietary Behaviors Questionnaire developed for this study with adequate reliability. The questionnaire comprised of four dimensions: recognizing the amount of calorie needs, selecting healthy diet, arranging a meal plan, and managing dietary behaviors challenges. Higher scores indicate better dietary behaviors.Result: More than half of the patients were women (54.3% with an average age of 56.8 years and diabetes duration of 9.7 years. The results revealed a moderate level of the total score of dietary behaviors. Considering each dimension, the results showed a moderate level of recognizing the amount of calorie needs, selecting healthy diet, and managing dietary behaviors challenges. The patients reported a high level of arranging meal plans. Pearson’s correlation was used to examine the relationships between selected factors and dietary behaviors. There was a positive significant relationship between the knowledge regarding diabetic diet and the total dietary behaviors scores (r = .36, p< .01. There were positive significant relationships between the knowledge regarding diabetic diet and the dimensions of recognizing the amount of calorie needs (r = .27, p< .05, selecting healthy diet (r = .35, p< .01, and managing dietary behaviors challenges (r = .28, p< .05. In contrast, the findings indicated no significant relationship between knowledge regarding diabetic diet and arranging a meal plan dimension. Furthermore, there was no significant relationship between the diabetes duration and dietary behaviors.Conclusion: Dietary behaviors among T2DM patients in Yogyakarta were at a moderate level. Knowledge

Electronic structure and quantum transport properties of metallic and semiconducting nanowires

Science.gov (United States)

Simbeck, Adam J.

The future of the semiconductor industry hinges upon new developments to combat the scaling issues that currently afflict two main chip components: transistors and interconnects. For transistors this means investigating suitable materials to replace silicon for both the insulating gate and the semiconducting channel in order to maintain device performance with decreasing size. For interconnects this equates to overcoming the challenges associated with copper when the wire dimensions approach the confinement limit, as well as continuing to develop low-k dielectric materials that can assure minimal cross-talk between lines. In addition, such challenges make it increasingly clear that device design must move from a top-down to a bottom-up approach in which the desired electronic characteristics are tailored from first-principles. It is with such fundamental hurdles in mind that ab initio calculations on the electronic and quantum transport properties of nanoscale metallic and semiconducting wires have been performed. More specifically, this study seeks to elaborate on the role played by confinement, contacts, dielectric environment, edge decoration, and defects in altering the electronic and transport characteristics of such systems. As experiments continue to achieve better control over the synthesis and design of nanowires, these results are expected to become increasingly more important for not only the interpretation of electronic and transport trends, but also in engineering the electronic structure of nanowires for the needs of the devices of the future. For the metallic atomic wires, the quantum transport properties are first investigated by considering finite, single-atom chains of aluminum, copper, gold, and silver sandwiched between gold contacts. Non-equilibrium Green's function based transport calculations reveal that even in the presence of the contact the conductivity of atomic-scale aluminum is greater than that of the other metals considered. This is

Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes.

Science.gov (United States)

Wang, Chuan; Badmaev, Alexander; Jooyaie, Alborz; Bao, Mingqiang; Wang, Kang L; Galatsis, Kosmas; Zhou, Chongwu

2011-05-24

This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (f(t)) of 5 GHz and with maximum oscillation frequency (f(max)) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.

Undoped p-type GaN1-xSbx alloys: Effects of annealing

Science.gov (United States)

Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

2016-12-01

We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

Linear and Nonlinear Rheology Combined with Dielectric Spectroscopy of Hybrid Polymer Nanocomposites for Semiconductive Applications

Science.gov (United States)

Kádár, Roland; Abbasi, Mahdi; Figuli, Roxana; Rigdahl, Mikael; Wilhelm, Manfred

2017-01-01

The linear and nonlinear oscillatory shear, extensional and combined rheology-dielectric spectroscopy of hybrid polymer nanocomposites for semiconductive applications were investigated in this study. The main focus was the influence of processing conditions on percolated poly(ethylene-butyl acrylate) (EBA) nanocomposite hybrids containing graphite nanoplatelets (GnP) and carbon black (CB). The rheological response of the samples was interpreted in terms of dispersion properties, filler distortion from processing, filler percolation, as well as the filler orientation and distribution dynamics inside the matrix. Evidence of the influence of dispersion properties was found in linear viscoelastic dynamic frequency sweeps, while the percolation of the nanocomposites was detected in nonlinearities developed in dynamic strain sweeps. Using extensional rheology, hybrid samples with better dispersion properties lead to a more pronounced strain hardening behavior, while samples with a higher volume percentage of fillers caused a drastic reduction in strain hardening. The rheo-dielectric time-dependent response showed that in the case of nanocomposites containing only GnP, the orientation dynamics leads to non-conductive samples. However, in the case of hybrids, the orientation of the GnP could be offset by the dispersing of the CB to bridge the nanoplatelets. The results were interpreted in the framework of a dual PE-BA model, where the fillers would be concentrated mainly in the BA regions. Furthermore, better dispersed hybrids obtained using mixing screws at the expense of filler distortion via extrusion processing history were emphasized through the rheo-dielectric tests. PMID:28336857

Linear and Nonlinear Rheology Combined with Dielectric Spectroscopy of Hybrid Polymer Nanocomposites for Semiconductive Applications

Directory of Open Access Journals (Sweden)

Roland Kádár

2017-01-01

Full Text Available The linear and nonlinear oscillatory shear, extensional and combined rheology-dielectric spectroscopy of hybrid polymer nanocomposites for semiconductive applications were investigated in this study. The main focus was the influence of processing conditions on percolated poly(ethylene-butyl acrylate (EBA nanocomposite hybrids containing graphite nanoplatelets (GnP and carbon black (CB. The rheological response of the samples was interpreted in terms of dispersion properties, filler distortion from processing, filler percolation, as well as the filler orientation and distribution dynamics inside the matrix. Evidence of the influence of dispersion properties was found in linear viscoelastic dynamic frequency sweeps, while the percolation of the nanocomposites was detected in nonlinearities developed in dynamic strain sweeps. Using extensional rheology, hybrid samples with better dispersion properties lead to a more pronounced strain hardening behavior, while samples with a higher volume percentage of fillers caused a drastic reduction in strain hardening. The rheo-dielectric time-dependent response showed that in the case of nanocomposites containing only GnP, the orientation dynamics leads to non-conductive samples. However, in the case of hybrids, the orientation of the GnP could be offset by the dispersing of the CB to bridge the nanoplatelets. The results were interpreted in the framework of a dual PE-BA model, where the fillers would be concentrated mainly in the BA regions. Furthermore, better dispersed hybrids obtained using mixing screws at the expense of filler distortion via extrusion processing history were emphasized through the rheo-dielectric tests.

Theory of Persistent, P-Type, Metallic Conduction in C-GeTe

National Research Council Canada - National Science Library

Edwards, Arthur H; Pineda, Andrew C; Schultz, Peter A; Martin, Marcus G; Thompson, Aidan P; Hjalmarson, Harold P

2005-01-01

.... However, it always displays p-type metallic conduction. This behavior is also observed in other chalcogenide materials, including Ge2Sb2Te5, commonly used for optically and electrically switched, non-volatile memory, and so is or great interest...

Ab initio density functional theory investigation of electronic properties of semiconducting single-walled carbon nanotube bundles

Science.gov (United States)

Moradian, Rostam; Behzad, Somayeh; Azadi, Sam

2008-09-01

By using ab initio density functional theory we investigated the structural and electronic properties of semiconducting (7, 0), (8, 0) and (10, 0) carbon nanotube bundles. The energetic and electronic evolutions of nanotubes in the bundling process are also studied. The effects of inter-tube coupling on the electronic dispersions of semiconducting carbon nanotube bundles are demonstrated. Our results show that the inter-tube coupling decreases the energy gap in semiconducting nanotubes. We found that bundles of (7, 0) and (8, 0) carbon nanotubes have metallic feature, while (10, 0) bundle is a semiconductor with an energy gap of 0.22 eV. To clarify our results the band structures of isolated and bundled nanotubes are compared.

Effects of Furnished Cage Type on Behavior and Welfare of Laying Hens

Directory of Open Access Journals (Sweden)

Xiang Li

2016-06-01

Full Text Available This study was conducted to compare the effects of layout of furniture (a perch, nest, and sandbox in cages on behavior and welfare of hens. Two hundred and sixteen Hyline Brown laying hens were divided into five groups (treatments with four replicates per group: small furnished cages (SFC, medium furnished cages type I (MFC-I, medium furnished cages type II (MFC-II, and medium furnished cages type III (MFC-III and conventional cages (CC. The experiment started at 18 week of age and finished at 52 week of age. Hens’ behaviors were filmed during the following periods: 8:00 to 10:00; 13:00 to 14:00; 16:00 to 17:00 on three separate days and two hens from each cage were measured for welfare parameters at 50 wk of age. The results showed that feeding and laying of all hens showed no effect by cage type (p>0.05, and the hens in the furnished cages had significantly lower standing and higher walking than CC hens (p0.05. The hens in MFC-I, −II, and −III showed a significant higher socializing behavior than SFC and CC (p<0.05. The lowest perching was for the hens in SFC and the highest perching found for the hens in MFC-III. Overall, the hens in CC showed poorer welfare conditions than the furnished cages, in which the feather condition score, gait score and tonic immobility duration of the hens in CC was significantly higher than SFC, MFC-I, MFC-II, and MFC-III (p<0.05. In conclusion, the furnished cage design affected both behavior and welfare states of hens. Overall, MFC-III cage design was better than SFC, MFC-I, and MFC-II cage designs.

Effects of Furnished Cage Type on Behavior and Welfare of Laying Hens.

Science.gov (United States)

Li, Xiang; Chen, Donghua; Li, Jianhong; Bao, Jun

2016-06-01

This study was conducted to compare the effects of layout of furniture (a perch, nest, and sandbox) in cages on behavior and welfare of hens. Two hundred and sixteen Hyline Brown laying hens were divided into five groups (treatments) with four replicates per group: small furnished cages (SFC), medium furnished cages type I (MFC-I), medium furnished cages type II (MFC-II), and medium furnished cages type III (MFC-III) and conventional cages (CC). The experiment started at 18 week of age and finished at 52 week of age. Hens' behaviors were filmed during the following periods: 8:00 to 10:00; 13:00 to 14:00; 16:00 to 17:00 on three separate days and two hens from each cage were measured for welfare parameters at 50 wk of age. The results showed that feeding and laying of all hens showed no effect by cage type (p>0.05), and the hens in the furnished cages had significantly lower standing and higher walking than CC hens (p0.05). The hens in MFC-I, -II, and -III showed a significant higher socializing behavior than SFC and CC (p<0.05). The lowest perching was for the hens in SFC and the highest perching found for the hens in MFC-III. Overall, the hens in CC showed poorer welfare conditions than the furnished cages, in which the feather condition score, gait score and tonic immobility duration of the hens in CC was significantly higher than SFC, MFC-I, MFC-II, and MFC-III (p<0.05). In conclusion, the furnished cage design affected both behavior and welfare states of hens. Overall, MFC-III cage design was better than SFC, MFC-I, and MFC-II cage designs.

Flow induced/ refined solution crystallization of a semiconducting polymer

Science.gov (United States)

Nguyen, Ngoc A.

Organic photovoltaics, a new generation of solar cells, has gained scientific and economic interests due to the ability of solution-processing and potentially low-cost power production. Though, the low power conversion efficiency of organic/ plastic solar cells is one of the most pertinent challenges that has appealed to research communities from many different fields including materials science and engineering, electrical engineering, chemical engineering, physics and chemistry. This thesis focuses on investigating and controlling the morphology of a semi-conducting, semi-crystalline polymer formed under shear-flow. Molecular structures and processing techniques are critical factors that significantly affect the morphology formation in the plastic solar cells, thus influencing device performance. In this study, flow-induced solution crystallization of poly (3-hexylthiophene) (P3HT) in a poor solvent, 2-ethylnapthalene (2-EN) was utilized to make a paint-like, structural liquid. The polymer crystals observed in this structured paint are micrometers long, nanometers in cross section and have a structure similar to that formed under quiescent conditions. There is pi-pi stacking order along the fibril axis, while polymer chain folding occurs along the fibril width and the order of the side-chain stacking is along fibril height. It was revealed that shear-flow not only induces P3HT crystallization from solution, but also refines and perfects the P3HT crystals. Thus, a general strategy to refine the semiconducting polymer crystals from solution under shear-flow has been developed and employed by simply tuning the processing (shearing) conditions with respect to the dissolution temperature of P3HT in 2-EN. The experimental results demonstrated that shear removes defects and allows more perfect crystals to be formed. There is no glass transition temperature observed in the crystals formed using the flow-induced crystallization indicating a significantly different

Semiconducting polymer-incorporated nanocrystalline TiO2 particles for photovoltaic applications

International Nuclear Information System (INIS)

Peng Fuguo; Wu Jihuai; Li Qingbei; Wang Yue; Yue Gentian; Xiao Yaoming; Li Qinghua; Lan Zhang; Fan Leqing; Lin Jianming; Huang Miaoliang

2011-01-01

Highlights: → A P3HT-PCBM/TiO 2 trinary hybrid solar cell has been fabricated. → P3HT-PCBM heterojunction replaces the dye and electrolyte in dye-sensitized cell, → Which simplifies preparation procedure and decreases the device cost. → The hybrid cell achieves a light-to-electric conversion efficiency of 2.61%. - Abstract: In this work, we study hybrid solar cells based on blends of the semiconducting polymer poly(3-octylthiophene-2,5-diyl)(P3OT) and [6,6]-phenyl C 61 butyric acid methyl (PCBM) coated titanium dioxide (TiO 2 ) nanocrystal film. The Fourier transform infrared spectra (FTIR), UV-vis absorption spectra and PL quenching researches show that the films had a stronger absorption in visible light range. The influence of the PCBM:P3OT ratio were researched and the optimized ratio of PCBM to P3OT (1:1.5) exhibit a short circuit current of 4.42 mA cm -2 , an open circuit voltage of 0.81 V, a fill factor of 0.73 and a light-to-electric conversion efficiency of 2.61% under a simulated solar light irradiation of 100 mW cm -2 .

The role of the VZn-NO-H complex in the p-type conductivity in ZnO.

Science.gov (United States)

Amini, M N; Saniz, R; Lamoen, D; Partoens, B

2015-02-21

Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant (∼10(18) cm(-3)) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZn-NO-H shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZn-NO-H complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn-NO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZn-NO, leaving only two states empty higher in the band gap and making the VZn-NO-H complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZn-NO-H complex, but probably the formation of the VZn-NO complex during the annealing process.

Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

Science.gov (United States)

2014-01-01

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

Insight into electronic, mechanical and transport properties of quaternary CoVTiAl: Spin-polarized DFT + U approach

Energy Technology Data Exchange (ETDEWEB)

Yousuf, Saleem, E-mail: nengroosaleem17@gmail.com; Gupta, D.C., E-mail: sosfizix@gmail.com

2017-07-15

Highlights: • 100% spin-polarized material important for the application in spintronics. • It is ferromagnetic and ductile in nature. • Shows semiconducting behavior with a band gap of 1.06 eV. • Possibly efficient high temperature thermoelectric material. - Abstract: We present a preliminary investigation of band structure and thermoelectric properties of new quaternary CoVTiAl Heusler alloy. Structural, magnetic property and 100% spin polarization of equiatomic CoVTiAl predicts ferromagnetic stable ground state. Band profile outlines the indirect semiconducting behavior in spin down channel with band gap of 1.06 eV, and the magnetic moment of 3 µ{sub B} in accordance with Slater-Pauling rule. To evaluate the accuracy of different approximations in predicting thermoelectric properties, the comparison with available experimental data is made which shows fair agreement for the transport coefficients. The high temperature (800 K) positive Seebeck coefficient of 73.71 µV/K describes the p-type character of the material with high efficiency due to highly influential semiconducting behavior around the Fermi level. Considering the combination of 100% spin-polarization, high Seebeck coefficient and large figure of merit, ferromagnetic semiconducting CoVTiAl may prove as a potential candidate for high temperature thermoelectrics and an ideal spin source material for spintronic applications.

Combined Scanning Nanoindentation and Tunneling Microscope Technique by Means of Semiconductive Diamond Berkovich Tip

International Nuclear Information System (INIS)

Lysenko, O; Novikov, N; Gontar, A; Grushko, V; Shcherbakov, A

2007-01-01

A combined Scanning Probe Microscope (SPM) - nanoindentation instrument enables submicron resolution indentation tests and in-situ scanning of structure surfaces. A newly developed technique is based on the scanning tunneling microscopy (STM) with integrated Berkovich diamond semiconductive tip. Diamond tips for a combined SPM were obtained using the developed procedure including the synthesis of the semiconductive borondoped diamond monocrystals by the temperature gradient method at high pressure - high temperature conditions and fabrication of the tips from these crystals considering their zonal structure. Separately grown semiconductive diamond single crystals were studied in order to find the best orientation of diamond crystals. Optimal scanning characteristics and experimental data errors were calculated by an analysis of the general functional dependence of the tunneling current from properties of the tip and specimen. Tests on the indentation and scanning of the gold film deposited on the silicon substrate employing the fabricated tips demonstrated their usability, acceptable resolution and sensitivity

Communication: electronic band gaps of semiconducting zig-zag carbon nanotubes from many-body perturbation theory calculations.

Science.gov (United States)

Umari, P; Petrenko, O; Taioli, S; De Souza, M M

2012-05-14

Electronic band gaps for optically allowed transitions are calculated for a series of semiconducting single-walled zig-zag carbon nanotubes of increasing diameter within the many-body perturbation theory GW method. The dependence of the evaluated gaps with respect to tube diameters is then compared with those found from previous experimental data for optical gaps combined with theoretical estimations of exciton binding energies. We find that our GW gaps confirm the behavior inferred from experiment. The relationship between the electronic gap and the diameter extrapolated from the GW values is also in excellent agreement with a direct measurement recently performed through scanning tunneling spectroscopy.

Nonlinear wave beams in a piezo semiconducting layer

International Nuclear Information System (INIS)

Bagdoev, A.G.; Shekoyan, A.V.; Danoyan, Z.N.

1997-01-01

The propagation of quasi-monochromatic nonlinear wave in a piezo semiconducting layer taking into account electron-concentration nonlinearity is considered. For such medium the evolution equations for incoming and reflected waves are derived. Nonlinear Schroedinger equations and solutions for narrow beams are obtained. It is shown that symmetry of incoming and reflected waves does not take place. The focusing of beams is investigated.18 refs

Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

Science.gov (United States)

Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

2016-01-01

Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes. PMID:27911774

n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

Energy Technology Data Exchange (ETDEWEB)

Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

2007-10-15

A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

Organic small molecule semiconducting chromophores for use in organic electronic devices

Energy Technology Data Exchange (ETDEWEB)

Welch, Gregory C.; Hoven, Corey V.; Nguyen, Thuc-Quyen

2018-02-13

Small organic molecule semi-conducting chromophores containing a pyridalthiadiazole, pyridaloxadiazole, or pyridaltriazole core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

KAUST Repository

Caraveo-Frescas, J. A.; Alshareef, Husam N.

2013-01-01

p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

KAUST Repository

Hota, M. K.; Caraveo-Frescas, J. A.; McLachlan, M. A.; Alshareef, Husam N.

2014-01-01

We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up

Majorana quasiparticles in semiconducting carbon nanotubes

Science.gov (United States)

Marganska, Magdalena; Milz, Lars; Izumida, Wataru; Strunk, Christoph; Grifoni, Milena

2018-02-01

Engineering effective p -wave superconductors hosting Majorana quasiparticles (MQPs) is nowadays of particular interest, also in view of the possible utilization of MQPs in fault-tolerant topological quantum computation. In quasi-one-dimensional systems, the parameter space for topological superconductivity is significantly reduced by the coupling between transverse modes. Together with the requirement of achieving the topological phase under experimentally feasible conditions, this strongly restricts in practice the choice of systems which can host MQPs. Here, we demonstrate that semiconducting carbon nanotubes (CNTs) in proximity with ultrathin s -wave superconductors, e.g., exfoliated NbSe2, satisfy these needs. By precise numerical tight-binding calculations in the real space, we show the emergence of localized zero-energy states at the CNT ends above a critical value of the applied magnetic field, of which we show the spatial evolution. Knowing the microscopic wave functions, we unequivocally demonstrate the Majorana nature of the localized states. An effective four-band model in the k -space, with parameters determined from the numerical spectrum, is used to calculate the topological phase diagram and its phase boundaries in analytic form. Finally, the impact of symmetry breaking contributions, like disorder and an axial component of the magnetic field, is investigated.

Empirical Equation Based Chirality (n, m Assignment of Semiconducting Single Wall Carbon Nanotubes from Resonant Raman Scattering Data

Directory of Open Access Journals (Sweden)

Md Shamsul Arefin

2012-12-01

Full Text Available This work presents a technique for the chirality (n, m assignment of semiconducting single wall carbon nanotubes by solving a set of empirical equations of the tight binding model parameters. The empirical equations of the nearest neighbor hopping parameters, relating the term (2n, m with the first and second optical transition energies of the semiconducting single wall carbon nanotubes, are also proposed. They provide almost the same level of accuracy for lower and higher diameter nanotubes. An algorithm is presented to determine the chiral index (n, m of any unknown semiconducting tube by solving these empirical equations using values of radial breathing mode frequency and the first or second optical transition energy from resonant Raman spectroscopy. In this paper, the chirality of 55 semiconducting nanotubes is assigned using the first and second optical transition energies. Unlike the existing methods of chirality assignment, this technique does not require graphical comparison or pattern recognition between existing experimental and theoretical Kataura plot.

Empirical Equation Based Chirality (n, m) Assignment of Semiconducting Single Wall Carbon Nanotubes from Resonant Raman Scattering Data

Science.gov (United States)

Arefin, Md Shamsul

2012-01-01

This work presents a technique for the chirality (n, m) assignment of semiconducting single wall carbon nanotubes by solving a set of empirical equations of the tight binding model parameters. The empirical equations of the nearest neighbor hopping parameters, relating the term (2n− m) with the first and second optical transition energies of the semiconducting single wall carbon nanotubes, are also proposed. They provide almost the same level of accuracy for lower and higher diameter nanotubes. An algorithm is presented to determine the chiral index (n, m) of any unknown semiconducting tube by solving these empirical equations using values of radial breathing mode frequency and the first or second optical transition energy from resonant Raman spectroscopy. In this paper, the chirality of 55 semiconducting nanotubes is assigned using the first and second optical transition energies. Unlike the existing methods of chirality assignment, this technique does not require graphical comparison or pattern recognition between existing experimental and theoretical Kataura plot. PMID:28348319

Field-induced detrapping in disordered organic semiconducting host-guest systems

NARCIS (Netherlands)

Cottaar, J.; Coehoorn, R.; Bobbert, P.A.

2010-01-01

In a disordered organic semiconducting host-guest material, containing a relatively small concentration of guest molecules acting as traps, the charge transport may be viewed as resulting from carriers that are detrapped from the guest to the host. Commonly used theories include only detrapping due

Impact of Nb vacancies and p-type doping of the NbCoSn-NbCoSb half-Heusler thermoelectrics.

Science.gov (United States)

Ferluccio, Daniella A; Smith, Ronald I; Buckman, Jim; Bos, Jan-Willem G

2018-02-07

The half-Heuslers NbCoSn and NbCoSb have promising thermoelectric properties. Here, an investigation of the NbCo 1+y Sn 1-z Sb z (y = 0, 0.05; 0 ≤ z ≤ 1) solid-solution is presented. In addition, the p-type doping of NbCoSn using Ti and Zr substitution is investigated. Rietveld analysis reveals the gradual creation of Nb vacancies to compensate for the n-type doping caused by the substitution of Sb in NbCoSn. This leads to a similar valence electron count (∼18.25) for the NbCo 1+y Sn 1-z Sb z samples (z > 0). Mass fluctuation disorder due to the Nb vacancies strongly decreases the lattice thermal conductivity from 10 W m -1 K -1 (z = 0) to 4.5 W m -1 K -1 (z = 0.5, 1). This is accompanied by a transition to degenerate semiconducting behaviour leading to large power factors, S 2 /ρ = 2.5-3 mW m -1 K -2 and figures of merit, ZT = 0.25-0.33 at 773 K. Ti and Zr can be used to achieve positive Seebeck values, e.g. S = +150 μV K -1 for 20% Zr at 773 K. However, the electrical resistivity, ρ 323K = 27-35 mΩ cm, remains too large for these materials to be considered useful p-type materials.

Structural Distortion Stabilizing the Antiferromagnetic and Semiconducting Ground State of BaMn2As2

Directory of Open Access Journals (Sweden)

Ekkehard Krüger

2016-09-01

Full Text Available We report evidence that the experimentally found antiferromagnetic structure as well as the semiconducting ground state of BaMn 2 As 2 are caused by optimally-localized Wannier states of special symmetry existing at the Fermi level of BaMn 2 As 2 . In addition, we find that a (small tetragonal distortion of the crystal is required to stabilize the antiferromagnetic semiconducting state. To our knowledge, this distortion has not yet been established experimentally.

Spin dynamics of light-induced charge separation in composites of semiconducting polymers and PC60BM revealed using Q-band pulse EPR.

Science.gov (United States)

Lukina, E A; Suturina, E; Reijerse, E; Lubitz, W; Kulik, L V

2017-08-23

Light-induced processes in composites of semiconducting polymers and fullerene derivatives have been widely studied due to their usage as active layers of organic solar cells. However the process of charge separation under light illumination - the key process of an organic solar cell is not well understood yet. Here we report a Q-band pulse electron paramagnetic resonance study of composites of the fullerene derivative PC 60 BM ([6,6]-phenyl-C 61 -butyric acid methyl ester) with different p-type semiconducting polymers regioregular and regiorandom P3HT (poly(3-hexylthiophene-2,5-diyl), MEH-PPV (poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]), PCDTBT (poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)]), PTB7 (poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}))), resulting in a detailed description of the in-phase laser flash-induced electron spin echo (ESE) signal. We found that in organic donor-acceptor composites the laser flash simultaneously induces species of two types: a polymer˙ + /fullerene˙ - spin-correlated polaron pair (SCPP) with an initial singlet spin state and (nearly) free polymer˙ + and fullerene˙ - species with non-equilibrium spin polarization. Species of the first type (SCPP) are well-known for polymer/fullerene blends and are usually associated with a charge-separated state. Also, spin polarization of long-living free species (polarons in deep traps) is affected by the laser flash, which is the third contribution to the flash-induced ESE signal. A protocol for extracting the in-phase ESE signal of the SCPP based on the dependence of the microwave nutation frequency on the strength of the spin coupling within the polaron pair was developed. Nutation experiments revealed an unusual pattern of the SCPP in RR-P3HT/PC 60 BM composites, from which the strength of the exchange interaction between the polymer

Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

International Nuclear Information System (INIS)

Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

2010-01-01

Full text : Semiconductor ZnO thin films with wide band gap attract much interest due to their properties such as chemical stability in hydrogen plasma, high optical transparency in the visible and nearinfrared region. Due to these properties ZnO oxide is a promising materials for electronic or optoelectronic applications such as solar cell (as an antireflecting coating and a transparent conducting material), gas sensors, surface acoustic wave devices. The purpose of this research is to improve the properties of n and p-type ZnO thin films for device applications. Polycrystalline ZnO is naturally n-type and very difficult to dope to make p-type. Therefore nowadays hardly produced p-type ZnO attracts a lot of attention. Nitrogen considered as the best dopant for p-type ZnO thin films.The transparent, conductive and very precise thickness controlled n and p-type semiconducting nanocrystalline ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. Structural, optical and electrical properties of these films were investigated. And also photoluminescence properties of these films were investigated. Transparent p-type ZnO thin films were produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride thin films were deposited with various thicknesses and under different oxygen pressures on glass substrates. Zinc nitride thin films, which were deposited at room temperatures, were amorphous and the optical transmission was below 70%. For oxidation zinc nitride, the sample was annealed in air starting from 350 degrees Celsium up to 550 degrees Celsium for one hour duration. These XRD patterns imply that zinc nitride thin films converted to zinc oxide thin films with the same hexagonal crystalline structures of ZnO. The optical measurements were made for each annealing temperature and the optical transmissions of ZnO thin films were found better than 90 percent in visible range after annealing over 350 degrees Celsium. By

Energy dissipation of free exciton polaritons in semiconducting films

International Nuclear Information System (INIS)

De Crescenzi, M.; Harbeke, G.; Tosatti, E.

1978-08-01

The effective (thickness-dependent) light absorption coefficient K(ω,d) is discussed for thin semiconducting films in the frequency range of free, spatially dispersive exciton polaritons. We find that (i) it oscillates strongly for small film thicknesses; (ii) it exhibits a slanted peak lineshape; (iii) its integrated strength also depends upon the exciton damping and extrapolates to zero for vanishing damping

Hybrid type I-type II superconducting behavior in magnesium diboride

International Nuclear Information System (INIS)

Kunchur, M.N.; Saracila, G.; Arcos, D.A.; Cui, Y.; Pogrebnyakov, A.; Orgiani, P.; Xi, X.X.

2006-01-01

In traditional type-II superconductors, an applied magnetic field depresses the transition temperature and introduces magnetic flux vortices that cause resistive losses accompanied by a broadening of the transition. High-field high-pulsed-current measurements have revealed a new hybrid behavior in disordered magnesium diboride films: The superconductivity survives high magnetic fields by entering a mixed state with vortices (like a type II superconductor) but holds its vortices nearly motionless and avoids dissipation (like a type I superconductor). A study of this phenomenon in magnesium diboride films with varying degrees of scattering indicate that the hybrid type I-type II behavior arises from the two-band nature of the superconductivity and the different degrees of influence that disorder exerts on its different bands. (author)

Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

KAUST Repository

Caraveo-Frescas, J. A.

2013-11-25

p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

Electronically type-sorted carbon nanotube-based electrochemical biosensors with glucose oxidase and dehydrogenase.

Science.gov (United States)

Muguruma, Hitoshi; Hoshino, Tatsuya; Nowaki, Kohei

2015-01-14

An electrochemical enzyme biosensor with electronically type-sorted (metallic and semiconducting) single-walled carbon nanotubes (SWNTs) for use in aqueous media is presented. This research investigates how the electronic types of SWNTs influence the amperometric response of enzyme biosensors. To conduct a clear evaluation, a simple layer-by-layer process based on a plasma-polymerized nano thin film (PPF) was adopted because a PPF is an inactive matrix that can form a well-defined nanostructure composed of SWNTs and enzyme. For a biosensor with the glucose oxidase (GOx) enzyme in the presence of oxygen, the response of a metallic SWNT-GOx electrode was 2 times larger than that of a semiconducting SWNT-GOx electrode. In contrast, in the absence of oxygen, the response of the semiconducting SWNT-GOx electrode was retained, whereas that of the metallic SWNT-GOx electrode was significantly reduced. This indicates that direct electron transfer occurred with the semiconducting SWNT-GOx electrode, whereas the metallic SWNT-GOx electrode was dominated by a hydrogen peroxide pathway caused by an enzymatic reaction. For a biosensor with the glucose dehydrogenase (GDH; oxygen-independent catalysis) enzyme, the response of the semiconducting SWNT-GDH electrode was 4 times larger than that of the metallic SWNT-GDH electrode. Electrochemical impedance spectroscopy was used to show that the semiconducting SWNT network has less resistance for electron transfer than the metallic SWNT network. Therefore, it was concluded that semiconducting SWNTs are more suitable than metallic SWNTs for electrochemical enzyme biosensors in terms of direct electron transfer as a detection mechanism. This study makes a valuable contribution toward the development of electrochemical biosensors that employ sorted SWNTs and various enzymes.

Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

National Research Council Canada - National Science Library

Chmelka, Bradley F

2007-01-01

...) nanocomposite films have been measured and controlled to modify, enhance, and understand their optical and/or semiconducting properties over a hierarchy of dimensions, from molecular to macroscopic...

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Goto, Masaki; Amano, Ryo; Shimoda, Naotaka [Graduate School of Automotive Science, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Kato, Yoshimine, E-mail: yoshimine.kato@zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Teii, Kungen [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2014-04-14

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

Plastic Electronics and Optoelectronics: New Science and Technology from Soluble Semiconducting Polymers and Bulk Heterojunction Solar Cells Fabricated from Soluble Semiconducting Polymers

Science.gov (United States)

2011-11-03

Seifter, A. J. Heeger, Adv. Mater., 23, 1679–1683 (2011). 8. Efficient, Air-Stable Bulk Heterojunction Polymer Solar Cells Using MoOx as the Anode...distribution is unlimited. 13. SUPPLEMENTARY NOTES None 14. ABSTRACT Bulk heterojunction (BHJ) solar cells were invented at UC Santa Barbara after the...Bulk Heterojunction Solar Cells Fabricated from Soluble Semiconducting Polymers Grant number: AFOSR FA9550-08-1-0248 Dr. Charle Lee, Program

Electrodeposited and Sol-gel Precipitated p-type SrTi1-xFexO3-δ Semiconductors for Gas Sensing

Directory of Open Access Journals (Sweden)

Ralf Moos

2007-09-01

Full Text Available In the present contribution, three methods for the preparation of nanoscaledSrTi1-xFexO3-δ sensor films for hydrocarbon sensing were investigated. Besides screen-printed thick films based on sol-precipitated nanopowders, two novel synthesis methods,electrospinning and electrospraying, were tested successfully. All of these sensor devicesshowed improved sensor functionality in comparison to conventional microscaled thickfilms. In order to explain the impact of the enhanced surface-to-volume ratio on sensorproperties in a quantitative way, a mechanistic model was applied to micro- and nanoscaleddevices. In contrast to the conventional diffusion-reaction model that has been proposed forn-type semiconducting sensors, it contained novel approaches with respect to themicroscopic mechanism. With very few fit variables, the present model was found torepresent well sensor functionality of p-type conducting SrTi0.8Fe0.2O3-δ films. In additionto the temperature dependency of the sensor response, the effect of the specific surface areaon the sensor response was predicted.

Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

Directory of Open Access Journals (Sweden)

Ping Feng

2014-09-01

Full Text Available One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Science.gov (United States)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

Science.gov (United States)

Kagan; Mitzi; Dimitrakopoulos

1999-10-29

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

Effect of fractal silver electrodes on charge collection and light distribution in semiconducting organic polymer films

Energy Technology Data Exchange (ETDEWEB)

Chamousis, RL; Chang, LL; Watterson, WJ; Montgomery, RD; Taylor, RP; Moule, AJ; Shaheen, SE; Ilan, B; van de Lagemaat, J; Osterloh, FE

2014-08-21

Living organisms use fractal structures to optimize material and energy transport across regions of differing size scales. Here we test the effect of fractal silver electrodes on light distribution and charge collection in organic semiconducting polymer films made of P3HT and PCBM. The semiconducting polymers were deposited onto electrochemically grown fractal silver structures (5000 nm x 500 nm; fractal dimension of 1.71) with PEDOT:PSS as hole-selective interlayer. The fractal silver electrodes appear black due to increased horizontal light scattering, which is shown to improve light absorption in the polymer. According to surface photovoltage spectroscopy, fractal silver electrodes outperform the flat electrodes when the BHJ film thickness is large (>400 nm, 0.4 V photovoltage). Photocurrents of up to 200 microamperes cm(-2) are generated from the bulk heterojunction (BHJ) photoelectrodes under 435 nm LED (10-20 mW cm(-2)) illumination in acetonitrile solution containing 0.005 M ferrocenium hexafluorophosphate as the electron acceptor. The low IPCE values (0.3-0.7%) are due to slow electron transfer to ferrocenium ion and due to shunting along the large metal-polymer interface. Overall, this work provides an initial assessment of the potential of fractal electrodes for organic photovoltaic cells.

A statistical model of a metallic inclusion in semiconducting media

International Nuclear Information System (INIS)

Shikin, V. B.

2016-01-01

The properties of an isolated multicharged atom embedded into a semiconducting medium are discussed. The analysis generalizes the results of the known Thomas–Fermi theory for a multicharged (Z ≫ 1) atom in vacuum when it is immersed into an electron–hole gas of finite temperature. The Thomas–Fermi–Debye (TFD) atom problem is directly related to the properties of donors in low-doped semiconductors and is alternative in its conclusions to the ideal scenario of dissociation of donors. In the existing ideal statistics, an individual donor under infinitely low doping is completely ionized (a charged center does not hold its neutralizing counter-ions). A Thomas–Fermi–Debye atom (briefly, a TFD donor) remains a neutral formation that holds its screening “coat” even for infinitely low doping level, i.e., in the region of n_dλ_0"3 ≪ 1, where n_d is the concentration of the doping impurity and λ_0 is the Debye length with the parameters of intrinsic semiconductor. Various observed consequences in the behavior of a TFD donor are discussed that allow one to judge the reality of the implications of the TFD donor model.

A statistical model of a metallic inclusion in semiconducting media

Energy Technology Data Exchange (ETDEWEB)

Shikin, V. B., E-mail: shikin@issp.ac.ru [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)

2016-11-15

The properties of an isolated multicharged atom embedded into a semiconducting medium are discussed. The analysis generalizes the results of the known Thomas–Fermi theory for a multicharged (Z ≫ 1) atom in vacuum when it is immersed into an electron–hole gas of finite temperature. The Thomas–Fermi–Debye (TFD) atom problem is directly related to the properties of donors in low-doped semiconductors and is alternative in its conclusions to the ideal scenario of dissociation of donors. In the existing ideal statistics, an individual donor under infinitely low doping is completely ionized (a charged center does not hold its neutralizing counter-ions). A Thomas–Fermi–Debye atom (briefly, a TFD donor) remains a neutral formation that holds its screening “coat” even for infinitely low doping level, i.e., in the region of n{sub d}λ{sub 0}{sup 3} ≪ 1, where n{sub d} is the concentration of the doping impurity and λ{sub 0} is the Debye length with the parameters of intrinsic semiconductor. Various observed consequences in the behavior of a TFD donor are discussed that allow one to judge the reality of the implications of the TFD donor model.

Insulated InP (100) semiconductor by nano nucleus generation in pure water

Science.gov (United States)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

SELF - EFFICACY, PSYCHOLOGICAL STRESS, FAMILY SUPPORT, AND EATING BEHAVIOR ON TYPE 2 DIABETES MELLITUS

Directory of Open Access Journals (Sweden)

Kusuma Wijaya Ridi Putra

2016-02-01

Full Text Available Background: Diabetes mellitus (DM is one of the leading causes of death and it is caused by genetics, nutrition, and unhealthy behaviors. Therefore, changes in lifestyle associated with eating behaviors in diabetes mellitus patients greatly impact on their quality of life. There are many factors related with changes in lifestyle of diabetes mellitus patients, especially eating behaviors. Purpose: This study aims to examine the relationships between self-efficacy, psychological stress, family support, and eating behaviors among type 2 diabetes mellitus (T2DM patients in Sidoarjo, Indonesia. Method: A total of 117 T2DM patients from the Sidoarjo Community Health Center were included in the analysis. Using SPSS IBM 21.0 program, Pearson product moment correlation was performed to analyze data. Results: The findings showed that self-efficacy and family support had positive relationship with eating behaviors (r = .692, p < .001; r = .683, p < .001, respectively. Psychological stress had negative relationship with eating behaviors (r = -.327, p < .001. Conclusion: Self-efficacy, family support, and psychological stress had relationship with eating behaviors. Nurses should pay attention to the factors to make T2DM patients into a long-term commitment toward healthy eating behaviors.

Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

International Nuclear Information System (INIS)

Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

2012-01-01

The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

P-adic Schroedinger type equation

International Nuclear Information System (INIS)

Vladimirov, V.S.; Volovich, I.V.

1988-12-01

In p-adic quantum mechanics a Schroedinger type equation is considered. We discuss the appropriate notion of differential operators. A solution of the Schroedinger type equation is given. A new set of vacuum states for the p-adic quantum harmonic oscillator is presented. The correspondence principle with the standard quantum mechanics is discussed. (orig.)

Chemical-free n-type and p-type multilayer-graphene transistors

Energy Technology Data Exchange (ETDEWEB)

Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

2016-08-01

A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

semiconducting nanostructures: morphology and thermoelectric properties

Science.gov (United States)

Culebras, Mario; Torán, Raquel; Gómez, Clara M.; Cantarero, Andrés

2014-08-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1- x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

Effectiveness of training on preventative nutritional behaviors for type-2 diabetes among the female adolescents: Examination of theory of planned behavior.

Science.gov (United States)

Maleki, Farzaneh; Hosseini Nodeh, Zahra; Rahnavard, Zahra; Arab, Masoume

2016-01-01

Since type-2 diabetes is the most common chronic disease among Iranian female adolescents, we applied theory of planned behavior to examine the effect of training to intention to preventative nutritional behaviors for type-2 diabetes among female adolescents. In this experimental study 200 (11-14 year old) girls from 8 schools of Tehran city (100 in each intervention and control group) were recruited based on cluster sampling method during two stages. For intervention group, an educational program was designed based on the theory of planned behavior and presented in 6 workshop sessions to prevent type-2 diabetes. The data were collected before and two months after the workshops using a valid and reliable (α=0.72 and r=0.80) authormade questionnaire based on Ajzens TPB questionnaire manual. The data were analyzed using t-test, chi-square test and analysis of covariance. Findings indicate that the two groups were homogeneous regarding the demographic characteristics before education, but the mean score of the theory components (attitudes, subjective norms, perceived behavioral control, and intention) was higher in the control group. Also, results showed all of the theory components significantly increased after the education in the intervention group (p=0.000). Training based on the theory of planned behavior enhances the intention to adherence preventative nutritional behaviors for type-2 diabetes among the studied female adolescents.

Defect studies in copper-based p-type transparent conducting oxides

Science.gov (United States)

Ameena, Fnu

Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Energy Technology Data Exchange (ETDEWEB)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

International Nuclear Information System (INIS)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10 19 cm −3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10 20 cm −3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10 19 cm −3 . The p-GaN and p-Al 0.11 Ga 0.89 N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K

Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

Energy Technology Data Exchange (ETDEWEB)

Huang, Yu-Jen; Tsai, Min-Chuan; Wang, Chiung-Hsin; Hsieh, Tsung-Eong, E-mail: tehsieh@mail.nctu.edu.tw

2012-02-29

Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 Degree-Sign C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. - Highlights: Black-Right-Pointing-Pointer Ce doping increased phase-change temperature of GST from 159 to 236 Degree-Sign C. Black-Right-Pointing-Pointer No suppression of resistivity level in amorphous Ce-doped GST. Black-Right-Pointing-Pointer Resistance ratio of amorphous and crystalline Ce-doped GST was preserved at 10{sup 5}. Black-Right-Pointing-Pointer p-type semiconducting behavior of GST was enhanced by Ce-doping. Black-Right-Pointing-Pointer Ce-doping improved the thermal stability of threshold voltage of GST PCM device.

Low pH concretes: instantaneous and delayed behaviors under external stress

International Nuclear Information System (INIS)

Leung Pah Hang, Thierry

2015-01-01

In the context of the radioactive wastes disposal in deep geological repository of clay, low-alkalinity and low heat of hydration concretes referenced 'low pH' were designed. The degradation of the properties of the clay can be limited by using these types of concrete. Two types of low pH binder were chosen for this research: the first one is comprised of cement, silica fume and fly ash (TCV) and the other one is comprised of cement, silica fume and slag (TL). The objective of this research is to comprehend the behavior of these concrete in order to ensure the well-placing of the fresh concrete at an industrial scale and good mechanical performances, chemical stability and confining properties. The experimental program focuses on a physico-chemical and mechanical characterization of these recent materials with high pozzolanic addition content. The experimental data are then modeled for the purpose of having a tool that, in the end, is able to predict the behavior of the low pH concretes within the structure. The results show that grinding altogether the three constituents improves the reactivity of the binder and allows a good reproducibility of the low pH design. The most important criterion which is a pH of the interstitial solution below 11 is met at 28 days. The heat measurements at early age show that the low pH concretes are low heat of hydration concretes as well. In the long run, high mechanical performances, low permeabilities and diffusivities were obtained on these materials. The modeling of the hydration, evolution of mechanical properties, damage, creep and hydric transfers is also covered in this thesis. The model of hydration was adjusted to match the hydration of ternary binders by taking into account the effects of the additions such as the heterogeneous nucleation, on the hydration of the cement. As for the other models, the experimental results were used as data input to validate the models on binders with high replacement rates

Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

2011-09-12

We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

Type A and type behaviors and factors related to job satisfaction among male white-collar workers.

Science.gov (United States)

Hagihara, A; Tarumi, K; Morimoto, K

1998-01-01

Numerous studies have examined the health effects of Type A behavior and job satisfaction/dissatisfaction, but we know very little about the relationship between aspects of the work environment related to job satisfaction and the Type A behavior pattern. In the present study, we analyzed data concerning work Stressors, private aspects of life, and job satisfaction among male white-collar workers (n=657) in a large steel company, and identified the respective aspects of the work environment related to job satisfaction among groups divided by Type A/B behavior patterns.We found that the nature of predictors for job satisfaction varied with the behavior type. "Being not busy at work" (pjob satisfaction among the Type A workers while "working less than 10 hours per day" (pjob satisfaction among the Type workers. "Work performance is evaluated" was a significant predictor of job satisfaction among all three behavior types (A, B, and A/B).Our results can provide information useful for the creation of programs to lower the level of job dissatisfaction and mental stress depending upon the behavior type of employees.

Comprehensive behavioral analysis of ENU-induced Disc1-Q31L and -L100P mutant mice

Directory of Open Access Journals (Sweden)

Shoji Hirotaka

2012-02-01

Full Text Available Abstract Background Disrupted-in-Schizophrenia 1 (DISC1 is considered to be a candidate susceptibility gene for psychiatric disorders, including schizophrenia, bipolar disorder, and major depression. A recent study reported that N-ethyl-N-nitrosourea (ENU-induced mutations in exon 2 of the mouse Disc1 gene, which resulted in the amino acid exchange of Q31L and L100P, caused an increase in depression-like behavior in 31 L mutant mice and schizophrenia-like behavior in 100P mutant mice; thus, these are potential animal models of psychiatric disorders. However, remaining heterozygous mutations that possibly occur in flanking genes other than Disc1 itself might induce behavioral abnormalities in the mutant mice. Here, to confirm the effects of Disc1-Q31L and Disc1-L100P mutations on behavioral phenotypes and to investigate the behaviors of the mutant mice in more detail, the mutant lines were backcrossed to C57BL/6JJcl through an additional two generations and the behaviors were analyzed using a comprehensive behavioral test battery. Results Contrary to expectations, 31 L mutant mice showed no significant behavioral differences when compared with wild-type control mice in any of the behavioral tests, including the Porsolt forced swim and tail suspension tests, commonly used tests for depression-like behavior. Also, 100P mutant mice exhibited no differences in almost all of the behavioral tests, including the prepulse inhibition test for measuring sensorimotor gating, which is known to be impaired in schizophrenia patients; however, 100P mutant mice showed higher locomotor activity compared with wild-type control mice in the light/dark transition test. Conclusions Although these results are partially consistent with the previous study in that there was hyperactivity in 100P mutant mice, the vast majority of the results are inconsistent with those of the previous study; this discrepancy may be explained by differences in the genetic background of the

Evolution of plant P-type ATPases

Directory of Open Access Journals (Sweden)

Christian N.S. Pedersen

2012-02-01

Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics.

Science.gov (United States)

Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; Shaw, Leo; McGuire, Allister F; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B-H; Bao, Zhenan

2017-05-16

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal-oxide-semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m 2 ) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

Structural and electronic properties of AlX (X = P, As, Sb) nanowires: Ab initio study

International Nuclear Information System (INIS)

Srivastava, Anurag; Tyagi, Neha

2012-01-01

Present paper discusses the structural stability and electronic properties of AlX (X = P, As and Sb) nanowires in its linear, zigzag, ladder, square and hexagonal type atomic configurations. The structural optimization has been performed in self consistence manner by using generalized gradient approximation with revised Perdew, Burke and Ernzerhof type parameterization. The study observes that in all the three nanowires, the square shaped atomic configuration is the most stable one. The calculated electronic band structures and density of states profile confirms the semiconducting behaviour of linear and zigzag shaped nanowires of AlP, whereas for AlAs and AlSb nanowires are metallic. The ground state properties have also been analysed in terms of bond length, bulk modulus and pressure derivative for all the nanowires along with their bulk counterpart. The lower bulk modulus of all the linear shaped geometries of AlX nanowires in comparison to its bulk counterpart indicates softening of the material at reduced dimension. -- Graphical abstract: Figure-Electronic band structure of zigzag shaped AlP nanowire. The present electronic band structures of zigzag and linear shaped AlP nanowires are showing a clear band gap at Γ point, however others (AlAs and AlSb) in zigzag as well as in linear shape show metallic behaviour. Highlights: ► Stability analysis of five geometries of AlX (X = P, As and Sb) nanowires studied. ► Square shaped geometry of AlX nanowires is most stable. ► Linear and zigzag shaped AlP nanowires are semiconducting. ► Bulk moduli of all the linear nanowires are lower than their bulk counterpart. ► Lower bulk moduli defends the softening of material.

Charge Transport in Two-Photon Semiconducting Structures for Solar Fuels

OpenAIRE

Liu, Guohua; Du, Kang; Haussener, Sophia; Wang, Kaiying

2016-01-01

Semiconducting heterostructures are emerging as promising light absorbers and offer effective electron–hole separation to drive solar chemistry. This technology relies on semiconductor composites or photoelectrodes that work in the presence of a redox mediator and that create cascade junctions to promote surface catalytic reactions. Rational tuning of their structures and compositions is crucial to fully exploit their functionality. In this review, we describe the possibilities of applying th...

Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds

International Nuclear Information System (INIS)

Lukashev, P.; Staten, B.; Hurley, N.; Kharel, P.; Gilbert, S.; Fuglsby, R.; Huh, Y.; Valloppilly, S.; Zhang, W.; Skomski, R.; Sellmyer, D. J.; Yang, K.

2016-01-01

The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti 2 MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.

Effects of Furnished Cage Type on Behavior and Welfare of Laying Hens

Science.gov (United States)

Li, Xiang; Chen, Donghua; Li, Jianhong; Bao, Jun

2016-01-01

This study was conducted to compare the effects of layout of furniture (a perch, nest, and sandbox) in cages on behavior and welfare of hens. Two hundred and sixteen Hyline Brown laying hens were divided into five groups (treatments) with four replicates per group: small furnished cages (SFC), medium furnished cages type I (MFC-I), medium furnished cages type II (MFC-II), and medium furnished cages type III (MFC-III) and conventional cages (CC). The experiment started at 18 week of age and finished at 52 week of age. Hens’ behaviors were filmed during the following periods: 8:00 to 10:00; 13:00 to 14:00; 16:00 to 17:00 on three separate days and two hens from each cage were measured for welfare parameters at 50 wk of age. The results showed that feeding and laying of all hens showed no effect by cage type (p>0.05), and the hens in the furnished cages had significantly lower standing and higher walking than CC hens (phens between the furnished cages (p>0.05). The hens in MFC-I, −II, and −III showed a significant higher socializing behavior than SFC and CC (phens in SFC and the highest perching found for the hens in MFC-III. Overall, the hens in CC showed poorer welfare conditions than the furnished cages, in which the feather condition score, gait score and tonic immobility duration of the hens in CC was significantly higher than SFC, MFC-I, MFC-II, and MFC-III (phens. Overall, MFC-III cage design was better than SFC, MFC-I, and MFC-II cage designs. PMID:26954171

First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions

Science.gov (United States)

Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang

2018-06-01

Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.

Semiconducting properties of oxide films formed onto an Nb electrode in NaOH solutions

Directory of Open Access Journals (Sweden)

VLADIMIR D. JOVIC

2008-03-01

Full Text Available In this paper, the results of the potentiostatic formation of homogeneous and heterogeneous, nano-crystalline passive films of Nb2O5 onto an Nb electrode in NaOH solutions of different concentrations at potentials lower than 3.0 V vs. SCE are presented. The semiconducting properties of such films were investigated by EIS measurements. After fitting the EIS results by appropriate equivalent circuits, the space charge capacitance (Csc and space charge resistance (Rsc of these films were determined. The donor density (Nsc, flat band potential (Efb and thickness of the space charge layer (dsc for such oxide films were determined from the corresponding Mott–Schottky (M–S plots. It is shown that all oxide films were n-type semiconductors in a certain potential range.

Synthesis of p-type GaN nanowires.

Science.gov (United States)

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Degadation of semiconducting polymers by concentrated sunlight

DEFF Research Database (Denmark)

Tromholt, Thomas; Manceau, Matthieu; Petersen, Martin Helgesen

2011-01-01

infra-red spectra of MEH-PPV degraded at 1 sun intensity and at high solar concentration only showed minor deviations in degradation mechanisms. The acceleration factor was found to vary linearly with the solar concentration. Finally, a comparison of the degradation rates at 1 sun and 100 suns...... was carried out in a materials study employing five different conjugated polymers relevant to polymer solar cells for which acceleration factors in the range 19–55 were obtained.......A lens based sunlight concentration setup was used to accelerate the degradation of semiconducting polymers. Sunlight was collected outdoor and focused into an optical fiber bundle allowing for indoor experimental work. Photo-degradation of several polymers was studied by UV–vis absorbance...

Associations between Modifiable Health-Risk Behaviors and Personality Types

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Jon C. Schommer

2017-05-01

Full Text Available Objectives: The first objective for this study was to explore if characteristics of personality type (using the Preferred Communication Style Questionnaire are associated with the following modifiable health-risk behaviors: smoking, exercise, alcohol consumption, nutrition, sleep, depression-related stress, anxiety-related stress, healthcare professional usage, and self-discipline. The second objective for this study was to explore if characteristics of personality type are associated with (1 the quality of patient-physician relationships, (2 patient-physician communication, and (3 preferred method for receiving information. Methods: Data were collected from 10,500 adult individuals residing in the United States via an on-line, self-administered survey coordinated by Qualtrics Panels from March 14-30, 2016. Chi-square analysis was used for making comparisons between categories of personality types and items related to health-risk behaviors. Statistical significance was set at p < 0.05. However, chi-square analysis with large sample sizes (e.g. 10,500 in this study readily yields statistical significance. Practical significance was set at four or more percentage points above or below the overall mean. Results: Regarding objective 1, personality type was associated with all nine health-risk behaviors studied. Personality types within the Experiencer temperament (17% of the U.S. population accounted for 46% of the undesirable scores we computed for health-risk behaviors. The Idealist temperament (17% of population accounted for 32% of the undesirable scores. Conceptualizers (10% of population accounted for 17% of the undesirable scores and Traditionalists (46% of population accounted for 5% of the undesirable scores. Regarding objective 2, the findings showed that personality type was associated with (1 the importance people place on the patient-physician relationship, (2 which characteristics of that relationship are most desirable, (3 desire for

Social Network Types and Acute Stroke Preparedness Behavior

Directory of Open Access Journals (Sweden)

Bernadette Boden-Albala

2011-08-01

Full Text Available Objectives: Presence of informal social networks has been associated with favorable health and behaviors, but whether different types of social networks impact on different health outcomes remains largely unknown. We examined the associations of different social network types (marital dyad, household, friendship, and informal community networks with acute stroke preparedness behavior. We hypothesized that marital dyad best matched the required tasks and is the most effective network type for this behavior. Methods: We collected in-person interview and medical record data for 1,077 adults diagnosed with stroke and transient ischemic attack. We used logistic regression analyses to examine the association of each social network with arrival at the emergency department (ED within 3 h of stroke symptoms. Results: Adjusting for age, race-ethnicity, education, gender, transportation type to ED and vascular diagnosis, being married or living with a partner was significantly associated with early arrival at the ED (odds ratio = 2.0, 95% confidence interval: 1.2–3.1, but no significant univariate or multivariate associations were observed for household, friendship, and community networks. Conclusions: The marital/partnership dyad is the most influential type of social network for stroke preparedness behavior.

p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

International Nuclear Information System (INIS)

Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

2013-01-01

Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm 2 V −1 s −1 and a hole concentration of 1.67 × 10 17  cm −3 , respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application

Piezoresistance in p-type silicon revisited

DEFF Research Database (Denmark)

Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads

2008-01-01

We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find...... to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be used to predict the piezoresistance effect in p-type silicon. ©2008 American Institute of Physics...... that the relaxation-time model needs to include all scattering mechanisms in order to obtain correct temperature and acceptor density dependencies. The k·p results are compared to results obtained using a recent tight-binding (TB) model. The magnitude of the pi44 piezocoefficient obtained from the TB model...

Maltreatment type and behaviors: does listening matter?

Science.gov (United States)

Merritt, Darcey H; Snyder, Susan M

2014-12-01

This article presents an exploratory assessment of whether children's perceptions of caseworker support (e.g. feeling listened to) moderates the relationship between the type of maltreatment and problematic behaviors. Relying on data collected for the National Survey of Child and Adolescent Well-Being (NSCAW I), this research measures how often children felt listened to by their caseworkers and the effect on the relationship between two types of maltreatment (e.g. physical abuse and neglect) and problematic child behaviors. Results indicate that whereas children reported feeling listened to most of the time, there are significant differences in the probabilities of problematic behavior scores between physically abused and neglected children according to how often they felt listened to. With the exception of those children who felt listened to all of the time, physically abused children have a higher probability of problematic behaviors than neglected children. Comparisons between the two maltreatment types indicate a greater impact of listening on physically abused children across the continuum of feeling listened to (e.g. never to all of the time), than for neglected children, except for at the highest level of listening, as results indicate a small, but significant difference indicating neglected children are more positively impacted by listening than physically abused kids. Implications for practice are that children's perceptions of support from caseworkers may influence behavioral outcomes differently according to maltreatment type. Additionally, these findings encourage the inclusion of children's perspectives regarding the relationships they have with caseworkers. Copyright © 2014. Published by Elsevier Ltd.

Superconductivity in Ti3P-type compounds

International Nuclear Information System (INIS)

Wills, J.O.; Hein, R.A.; Waterstrat, R.M.

1978-01-01

A study of 12 intermetallic A 3 B compounds which crsytallize in the tetragonal Ti 3 P-type structure has revealed five new superconductors with transition temperatures below 1 K: Zr 3 Si, Zr 3 Ge, Zr 3 P, V 3 P, and Nb 3 Ge (extrapolated from the alloy series Nb-Ge-As). In addition, two compounds, Zr 3 Sb and Ta 3 Ge, having the Ni 3 P structure type are found to be superconducting below 1 K. Within the Ti 3 P-type compounds, those with the lighter ''B'' elements in a given column of the Periodic Table have the higher transition temperatures. Critical-magnetic-field and electrical-resistivity data are reported for the superconducting Ti 2 P-type compound Nb 3 P, which permit one to estimate the Ginzburg-Landau kappa parameter and the electronic-specific-heat coefficient γ. The kappa value of 8.4 indicates that this material is type II, and the γ value of 1.3 mJ/mole K 2 for Nb 3 P is probably related to its low transition temperature relative to many A15 compounds

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

An augmented space formulation of the optical conductivity of random semiconducting alloys

International Nuclear Information System (INIS)

Mookerjee, A.

1984-08-01

A formalism has been developed for the study of optical conductivity of disordered semiconducting alloys effect of off-diagonal disorder, clustering and randomness in the electron-photon interaction matrix may be incorporated within this. The aim is to finally study GaAssub(x)Sbsub(1-x) as well as deep levels in this alloy. (author)

Comparative study between c-Si and CZT semiconducting detectors using the mathematical simulation of the radiation transport through matter

International Nuclear Information System (INIS)

Dona, O.; Leyva, A.; Pinera, I.; Abreu, Y.; Cruz, C.

2007-01-01

Using the code system MCNP-X, based on the Monte Carlo statistical method, a comparative study of some properties of the crystalline silicon and CZT semiconducting detectors was carried out. This program, conceived to simulate the transport of several types of particles through matter, allowed the study of spatial distribution of the radiation energy deposition in detectors and evaluate the devices quantum efficiency. A quantitative estimation of the number of charge carriers generated in active zone of the detector was also presented. The results of the displacement cross sections calculation and the devices resistance to the radiacional damage are discussed. (Author)

Degradable conjugated polymers for the selective sorting of semiconducting carbon nanotubes

Science.gov (United States)

Gopalan, Padma; Arnold, Michael Scott; Kansiusarulsamy, Catherine Kanimozhi; Brady, Gerald Joseph; Shea, Matthew John

2018-04-10

Conjugated polymers composed of bi-pyridine units linked to 9,9-dialkyl fluorenyl-2,7-diyl units via imine linkages along the polymer backbone are provided. Also provided are semiconducting single-walled carbon nanotubes coated with the conjugated polymers and methods of sorting and separating s-SWCNTs from a sample comprising a mixture of s-SWCNTs and metallic single-walled carbon nanotubes using the conjugated polymers.

Photochemical Creation of Fluorescent Quantum Defects in Semiconducting Carbon Nanotube Hosts.

Science.gov (United States)

Wu, Xiaojian; Kim, Mijin; Kwon, Hyejin; Wang, YuHuang

2018-01-15

Quantum defects are an emerging class of synthetic single-photon emitters that hold vast potential for near-infrared imaging, chemical sensing, materials engineering, and quantum information processing. Herein, we show that it is possible to optically direct the synthetic creation of molecularly tunable fluorescent quantum defects in semiconducting single-walled carbon nanotube hosts through photochemical reactions. By exciting the host semiconductor with light that resonates with its electronic transition, we find that halide-containing aryl groups can covalently bond to the sp 2 carbon lattice. The introduced quantum defects generate bright photoluminescence that allows tracking of the reaction progress in situ. We show that the reaction is independent of temperature but correlates strongly with the photon energy used to drive the reaction, suggesting a photochemical mechanism rather than photothermal effects. This type of photochemical reactions opens the possibility to control the synthesis of fluorescent quantum defects using light and may enable lithographic patterning of quantum emitters with electronic and molecular precision. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication

Science.gov (United States)

Jang, Ho-Kyun; Choi, Jun Hee; Kim, Do-Hyun; Kim, Gyu Tae

2018-06-01

Single-walled carbon nanotube (SWCNT) is generally used as a networked structure in the fabrication of a field-effect transistor (FET) since it is known that one-third of SWCNT is electrically metallic and the remains are semiconducting. In this case, the presence of metallic paths by metallic SWCNT (m-SWCNT) becomes a significant technical barrier which hinders the networks from achieving a semiconducting behavior, resulting in a low on/off ratio. Here, we report on an easy method of controlling the on/off ratio of a FET where semiconducting SWCNT (s-SWCNT) and m-SWCNT constitute networks between source and drain electrodes. A FET with SWCNT networks was simply sonicated under water to control the on/off ratio and network density. As a result, the FET having an almost metallic behavior due to the metallic paths by m-SWCNT exhibited a p-type semiconducting behavior. The on/off ratio ranged from 1 to 9.0 × 104 along sonication time. In addition, theoretical calculations based on Monte-Carlo method and circuit simulation were performed to understand and explain the phenomenon of a change in the on/off ratio and network density by sonication. On the basis of experimental and theoretical results, we found that metallic paths contributed to a high off-state current which leads to a low on/off ratio and that sonication formed sparse SWCNT networks where metallic paths of m-SWCNT were removed, resulting in a high on/off ratio. This method can open a chance to save the device which has been considered as a failed one due to a metallic behavior by a high network density leading to a low on/off ratio.

P -type transparent conducting oxides

International Nuclear Information System (INIS)

Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

2016-01-01

Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

Low temperature (< 100 °C) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

International Nuclear Information System (INIS)

Li, Flora M.; Waddingham, Rob; Milne, William I.; Flewitt, Andrew J.; Speakman, Stuart; Dutson, James; Wakeham, Steve; Thwaites, Mike

2011-01-01

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p–n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu 2 O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu 2 O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu 2 O films are reported. It is known from previously published work that the formation of pure Cu 2 O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu 2 O thin films (as opposed to CuO or mixed phase CuO/Cu 2 O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu 2 O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a

Cashew nut shell liquid, a valuable raw material for generating semiconductive polyaniline nanofibers

Directory of Open Access Journals (Sweden)

Raiane Valenti Gonçalves

2018-03-01

Full Text Available Abstract Cashew nut shell liquid (CNSL is an abundant and renewable by-product of the cashew nut industry. It appears to be a valuable raw material for generating semiconductive polyaniline (PAni nanomaterial with enhanced thermal stability and well-defined nanofiber morphology following a polymerization dispersion process. This study confirms that CNSL acts as a soft template during PAni synthesis, leading to an improvement in the nanofiber aspect. CNSL also improves the thermal stability of the PAni nanomaterial. Moreover, CNSL is an effective surfactant that promotes and stabilizes the dispersion of PAni nanofibers within water, allowing the more ecofriendly preparation of PAni nanomaterial by substituting the commonly used organic solvent with aqueous media. Finally, although CNSL promotes the formation of the conductive emeraldine salt form of PAni, increasing CNSL concentrations appear to plasticize the PAni polymer, leading to reduced electrical conductivity. However, this reduction is not detrimental, and PAni nanofibers remain semiconductive even under high CNSL concentrations.

Growth and Functionality of Cells Cultured on Conducting and Semi-Conducting Surfaces Modified with Self-Assembled Monolayers (SAMs

Directory of Open Access Journals (Sweden)

Rajendra K. Aithal

2016-02-01

Full Text Available Bioengineering of dermal and epidermal cells on surface modified substrates is an active area of research. The cytotoxicity, maintenance of cell phenotype and long-term functionality of human dermal fibroblast (HDF cells on conducting indium tin oxide (ITO and semi-conducting, silicon (Si and gallium arsenide (GaAs, surfaces modified with self-assembled monolayers (SAMs containing amino (–NH2 and methyl (–CH3 end groups have been investigated. Contact angle measurements and infrared spectroscopic studies show that the monolayers are conformal and preserve their functional end groups. Morphological analyses indicate that HDFs grow well on all substrates except GaAs, exhibiting their normal spindle-shaped morphology and exhibit no visible signs of stress or cytoplasmic vacuolation. Cell viability analyses indicate little cell death after one week in culture on all substrates except GaAs, where cells died within 6 h. Cells on all surfaces proliferate except on GaAs and GaAs-ODT. Cell growth is observed to be greater on SAM modified ITO and Si-substrates. Preservation of cellular phenotype assessed through type I collagen immunostaining and positive staining of HDF cells were observed on all modified surfaces except that on GaAs. These results suggest that conducting and semi-conducting SAM-modified surfaces support HDF growth and functionality and represent a promising area of bioengineering research.

Ultraviolet optical absorptions of semiconducting copper phosphate glasses

Science.gov (United States)

Bae, Byeong-Soo; Weinberg, Michael C.

1993-01-01

Results are presented of a quantitative investigation of the change in UV optical absorption in semiconducting copper phosphate glasses with batch compositions of 40, 50, and 55 percent CuO, as a function of the Cu(2+)/Cu(total) ratio in the glasses for each glass composition. It was found that optical energy gap, E(opt), of copper phosphate glass is a function of both glass composition and Cu(2+)/Cu(total) ratio in the glass. E(opt) increases as the CuO content for fixed Cu(2+)/Cu(total) ratio and the Cu(2+)/Cu(total) ratio for fixed glass composition are reduced.

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

Science.gov (United States)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Effects of high light intensities on the optical Kerr nonlinearity of semiconducting polymers

International Nuclear Information System (INIS)

Charra, Fabrice

1990-01-01

Experimental investigations, in the picosecond time scale, of the Kerr type optical nonlinearity (or pump and probe) are presented. The nonlinear molecules semiconducting polymers of the type poly-diacetylene. The degenerate case (pump and probe at the same frequency) has been studied by four wave mixing at 1064 nm, in the configuration of phase conjugation. It is shown that the response is dominated by high orders of nonlinearity. The results are analysed in terms of two photon resonance. The non-degenerate case is studied by two wave mixing or in the optical Kerr gate experiment. The optical Stark effect and the differential spectra of photoinduced species are analysed. Two photon excitations at 1064 nm and one photon excitations at 532 nm are compared. A consequence of the mechanism of the nonlinearity is the possibility of generating phase conjugate waves at double frequency. The theoretical analysis and the experimental demonstration of this process are presented. The experiment is only sensitive to nonlinearities of the fifth order or more and thus allows to clarify its origins and dynamics. Finally, quantum modelling and calculations of the nonlinear optical responses, developed for the interpretations of the above experiments, are presented. (author) [fr

Magnetism by interfacial hybridization and p-type doping of MoS(2) in Fe(4)N/MoS(2) superlattices: a first-principles study.

Science.gov (United States)

Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlögl, Udo; Bai, Haili

2014-03-26

Magnetic and electronic properties of Fe4N(111)/MoS2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) Fe(I)Fe(II)-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between Fe(I)/Fe(II) and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe(I). For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices.

Biocompatibility of biodegradable semiconducting melanin films for nerve tissue engineering.

Science.gov (United States)

Bettinger, Christopher J; Bruggeman, Joost P; Misra, Asish; Borenstein, Jeffrey T; Langer, Robert

2009-06-01

The advancement of tissue engineering is contingent upon the development and implementation of advanced biomaterials. Conductive polymers have demonstrated potential for use as a medium for electrical stimulation, which has shown to be beneficial in many regenerative medicine strategies including neural and cardiac tissue engineering. Melanins are naturally occurring pigments that have previously been shown to exhibit unique electrical properties. This study evaluates the potential use of melanin films as a semiconducting material for tissue engineering applications. Melanin thin films were produced by solution processing and the physical properties were characterized. Films were molecularly smooth with a roughness (R(ms)) of 0.341 nm and a conductivity of 7.00+/-1.10 x 10(-5)S cm(-1) in the hydrated state. In vitro biocompatibility was evaluated by Schwann cell attachment and growth as well as neurite extension in PC12 cells. In vivo histology was evaluated by examining the biomaterial-tissue response of melanin implants placed in close proximity to peripheral nerve tissue. Melanin thin films enhanced Schwann cell growth and neurite extension compared to collagen films in vitro. Melanin films induced an inflammation response that was comparable to silicone implants in vivo. Furthermore, melanin implants were significantly resorbed after 8 weeks. These results suggest that solution-processed melanin thin films have the potential for use as a biodegradable semiconducting biomaterial for use in tissue engineering applications.

Risk behaviors for eating disorder in adolescents and adults with type 1 diabetes

Directory of Open Access Journals (Sweden)

Sonia Tucunduva Philippi

2013-06-01

Full Text Available Objective: To evaluate the frequency of risk behaviors for eating disorder (ED in patients with type 1 diabetes (T1D and their association with gender, nutritional status, variables related to T1D, and body satisfaction. Method: 189 individuals with T1D (12-56 years old answered the Bulimic Investigation Test (BITE, the Eating Attitude Test (EAT, the Binge Eating Scale (BES, Stunkard's Figure Rating Scale, and questions regarding control of T1D. Association between ED risk behaviors and the selected variables was assessed with the chi-square test and Student's t-test; factors that influenced the risk of ED were identified by means of logistic regression. Results: Of the patients with T1D, 58.7% were at risk of ED (45, 40, and 16% according to the EAT, BITE and BES, respectively. There were significant differences between groups with and without risk for ED related to BMI (p = 0.009, gender (p = 0.001, insulin omission (p = 0.003, use of the carbohydrate counting method (p = 0.019, and body dissatisfaction (p = 0.001. The risk of ED was nine times higher in patients who reduced or omitted insulin (p = 0.036. Conclusions: Patients with T1D demonstrated a high frequency of body dissatisfaction and ED risk behaviors; the omission or reduction of insulin was an important risk factor.

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Science.gov (United States)

Ferraro, E.; Fanciulli, M.; De Michielis, M.

2018-06-01

The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications. Its advantages are in terms of fabrication, control and manipulation in view of implementation of fast single and two-qubit operations through only electrical tuning. The presence of the environmental noise due to nuclear spins and charge traps, in addition to fluctuations in the applied magnetic field and charge fluctuations on the electrostatic gates adopted to confine the electrons, is taken into account including random magnetic field and random coupling terms in the Hamiltonian. The behavior of the return probability as a function of time for initial conditions of interest is presented. Moreover, through an envelope-fitting procedure on the return probabilities, coherence times are extracted when model parameters take values achievable experimentally in semiconducting devices.

Health literacy, self-efficacy, and self-care behaviors in patients with type 2 diabetes mellitus.

Science.gov (United States)

Bohanny, Walton; Wu, Shu-Fang Vivienne; Liu, Chieh-Yu; Yeh, Shu-Hui; Tsay, Shiow-Luan; Wang, Tsae-Jyy

2013-09-01

The study purpose was to explore the relationships among health literacy, self-efficacy, and self-care behaviors of patients with type 2 diabetes. A cross-sectional study with a descriptive correlational design was conducted. Patients (N = 150) with type 2 diabetes were recruited from diabetes clinics in the Marshall Islands. Levels of health literacy, self-efficacy, and self-care behaviors were assessed by a questionnaire. Health literacy, receiving diabetes education, and employment status together explained 11.8% of the variance in self-efficacy (F((3,147)) = 7.58, p < .001). Patients who had higher health literacy, received more diabetes-related education, were currently employed and had better self-efficacy. Self-efficacy and marital status together explained 16.7% of the variance in self-care behaviors (F((2,148)) = 15.96, p < .001). Patients who had higher self-efficacy and who were married had better self-care behaviors. Strategies are needed to incorporate the concept of self-efficacy in the design of diabetes education to promote patients' self-care behaviors, with an emphasis on dealing with hyper- or hypoglycemia, following the diet plan, and checking blood sugar levels as recommended. Diabetes education material that requires a lower literacy level may be needed for older or unemployed adult populations. ©2013 The Author(s) ©2013 American Association of Nurse Practitioners.

Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction.

Science.gov (United States)

Qin, Jing-Kai; Shao, Wen-Zhu; Xu, Cheng-Yan; Li, Yang; Ren, Dan-Dan; Song, Xiao-Guo; Zhen, Liang

2017-05-10

Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS 2 ) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS 2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS 2 field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS 2 and ReS 2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at V d = -2/+2 V. The successful synthesis of p-type ReS 2 in this study could largely promote its application in novel electronic and optoelectronic devices.

In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Chen, Bin, E-mail: chenbinmse@gmail.com; Chen, Jun; Yao, Yuanzhao; Sekiguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Matsuhata, Hirofumi; Okumura, Hajime [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2014-07-28

Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.

Charge-carrier mobilities in disordered semiconducting polymers : effects of carrier density and electric field

NARCIS (Netherlands)

Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, D.M. de; Michels, M.A.J.

2006-01-01

We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solutions of the Master equation, we study the dependence of the charge-carrier

Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium

International Nuclear Information System (INIS)

Zou, Minmin; Li, Jing-Feng; Kita, Takuji

2013-01-01

Fine-grained Ti-doped FeVSb half-Heusler alloys were synthesized by combining mechanical alloying and spark plasma sintering and their thermoelectric properties were investigated with an emphasis on the influences of Ti doping and phase purity. It was found that substituting V with Ti can change the electrical transport behavior from n-type to p-type due to one less valence electron of Ti than V, and the sample with nominal composition FeV 0.8 Ti 0.4 Sb exhibits the largest Seebeck coefficient and the maximum power factor. By optimizing the sintering temperature and applying annealing treatment, the power factor is significantly improved and the thermal conductivity is reduced simultaneously, resulting in a ZT value of 0.43 at 500 °C, which is relatively high as for p-type half-Heusler alloys containing earth-abundant elements. - Graphical abstract: Fine-grained Ti-doped FeVSb alloys were prepared by the MA-SPS method. The maximum ZT value reaches 0.43 at 500 °C, which is relatively high for p-type half-Heusler alloys. Highlights: ► Ti-doped FeVSb half-Heusler alloys were synthesized by combining MA and SPS. ► Substituting V with Ti changes the electrical behavior from n-type to p-type. ► Thermoelectric properties are improved by optimizing sintering temperature. ► Thermoelectric properties are further improved by applying annealing treatment. ► A high ZT value of 0.43 is obtained at 500 °C for p-type Ti-doped FeVSb alloys.

Genome-wide association study for behavior, type traits, and muscular development in Charolais beef cattle

NARCIS (Netherlands)

Vallée, A.; Daures, J.; Arendonk, van J.A.M.; Bovenhuis, H.

2016-01-01

<p>Behavior, type traits, and muscular development are of interest for beef cattle breeding. Genome-wide association studies (GWAS) enable the identification of candidate genes, which enables genebased selection and provides insight in the genetic architecture of these traits. The objective of the

Beliefs, attitudes and subjective norms as predictors of preventive behavioral intentions in offspring of people with Type 2 Diabetes Mellitus

Directory of Open Access Journals (Sweden)

Eduardo Muñoz Bautista

2014-03-01

Full Text Available Objective: To analyze beliefs, attitudes and subjective norms as predictors of preventive behavioral intention in offspring of parents with type 2 diabetes mellitus in two cities in the state of Hidaldo, Mexico. Methods: This is a quantitative, nonexperimental, explanatory and cross-sectional study. Through a two-stage probabilistic sample, 246 subjects (between 15 and 59 years old whose parents were enrolled in a diabetes program in the social security service were interviewed in a personal manner. Results: It was observed that the reduction in the risk of developing diabetes affects the intent of developing preventive behaviors mediated by attitude toward prevention (p=0.000, which is the most important predictor of that intention (p=0.000. Subjective norms also have a significant impact on the preventive behavioral intention (p=0.000, although the preventive attitude is not affected by beliefs regarding the development (p=0.095 and severity of the disease (p=0.056. Conclusion: The application of the model allowed the identification of relevant aspects to support health promotion, oriented to influence the processes of change in social behavior, in a population at risk of developing type 2 diabetes mellitus in Mexico. doi:10.5020/18061230.2014.p43

Ultrasensitive Detection of Proteins on Western Blots with Semiconducting Polymer Dots

OpenAIRE

Ye, Fangmao; Smith, Polina B.; Wu, Changfeng; Chiu, Daniel T.

2013-01-01

We demonstrate ultrasensitive fluorescence imaging of proteins on Western blots using a bright, compact, and orange-emitting semiconducting polymer dot (CN-PPV). We achieved a detection limit at the single-picogram level in dot blots; with conventional Western blotting, we detected 50 pg of transferrin and trypsin inhibitor after SDS-PAGE and transfer onto a PVDF membrane. Our method does not require any additional equipment or time compared to the conventional procedure with traditional fluo...

Polarization-induced renormalization of molecular levels at metallic and semiconducting surfaces

DEFF Research Database (Denmark)

García Lastra, Juan Maria; Rostgaard, Carsten; Rubio, A.

2009-01-01

On the basis of first-principles G0W0 calculations we systematically study how the electronic levels of a benzene molecule are renormalized by substrate polarization when physisorbed on different metallic and semiconducting surfaces. The polarization-induced reduction in the energy gap between oc...... find that error cancellations lead to remarkably good agreement between the G0W0 and Kohn-Sham energies for the occupied orbitals of the adsorbed molecule....

Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

OpenAIRE

Casper, Frederick; Felser, Claudia

2007-01-01

The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

14th Conference on "Microscopy of Semiconducting Materials"

CERN Document Server

Hutchison, J

2005-01-01

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Is there a Difference in Van Der Waals Interactions between Rare Gas Atoms Adsorbed on Metallic and Semiconducting Single-Walled Carbon Nanotubes?

Energy Technology Data Exchange (ETDEWEB)

Chen, De-Li [Univ. of Pittsburgh, PA (United States). Dept. of Chemical and Petroleum Engineering; Mandeltort, Lynn [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Chemistry; Saidi, Wissam A. [Univ. of Pittsburgh, PA (United States). Dept. of Chemical and Petroleum Engineering; Yates, John T. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Chemistry; Cole, Milton W. [Pennsylvania State Univ., University Park, PA (United States). Dept of Physics; Johnson, J. Karl [Univ. of Pittsburgh, PA (United States). Dept. of Chemical and Petroleum Engineering; National Energy Technology Lab. (NETL), Pittsburgh, PA, (United States)

2013-03-01

Differences in polarizabilities of metallic (M) and semiconducting (S) single-walled carbon nanotubes (SWNTs) might give rise to differences in adsorption potentials. We show from experiments and van der Waals-corrected density functional theory (DFT) that binding energies of Xe adsorbed on M- and S-SWNTs are nearly identical. Temperature programmed desorption of Xe on purified M- and S-SWNTs give similar peak temperatures, indicating that desorption kinetics and binding energies are independent of the type of SWNT. Binding energies computed from vdW-corrected DFT are in good agreement with experiments.

Valence band states in Si-based p-type delta-doped field effect transistors

International Nuclear Information System (INIS)

Martinez-Orozco, J C; Vlaev, Stoyan J

2009-01-01

We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

Valence band states in Si-based p-type delta-doped field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

2009-05-01

We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

High power Co3O4/ZnO p–n type piezoelectric transducer

International Nuclear Information System (INIS)

Hu, Yuh-Chung; Lee, Tsung-Han; Chang, Pei-Zen; Su, Pei-Chen

2015-01-01

Enhancing the output power of piezoelectric transducer is essential in order to supply sufficient and sustainable power to wireless sensor nodes or electronic devices. In this work, a Co 3 O 4 /ZnO p–n type power piezoelectric transducer which can be operated at low frequencies has been developed by utilizing n-type semiconducting zinc oxide (ZnO) and p-type semiconducting tricobalt tetroxide (Co 3 O 4 ). We utilize ZnO to be the piezoelectric transducer and build a multi-layer (Au/Co 3 O 4 /ZnO/Ti) thin film structure. The ZnO thin film with preferred orientation along the (002) plane was deposited under optimized deposition conditions on the flexible titanium (Ti) foil with thickness of 80 μm. The Co 3 O 4 /ZnO interface forms a p–n junction and increases the difference in Fermi levels between the two electrodes, resulting in the great enhancement of output power. The measured output power of the p–n type piezoelectric transducer with optimal resistance of 100 kΩ is 10.4 μW at low operating frequency of 37 Hz, which is 10.9 times of output power of ZnO piezoelectric transducers. - Highlights: • Deposited zinc oxide performed good piezoelectric coefficient. • ZnO thin film with preferred orientation along the (002) plane was deposited. • A p–n type piezoelectric transducer with enhanced output power was fabricated. • 10.9 times increment in output power was obtained. • Increase of difference in Fermi level and p–n junction formation was explained

Piezoelectric and semiconducting coupled power generating process of a single ZnO belt/wire. A technology for harvesting electricity from the environment.

Science.gov (United States)

Song, Jinhui; Zhou, Jun; Wang, Zhong Lin

2006-08-01

This paper presents the experimental observation of piezoelectric generation from a single ZnO wire/belt for illustrating a fundamental process of converting mechanical energy into electricity at nanoscale. By deflecting a wire/belt using a conductive atomic force microscope tip in contact mode, the energy is first created by the deflection force and stored by piezoelectric potential, and later converts into piezoelectric energy. The mechanism of the generator is a result of coupled semiconducting and piezoelectric properties of ZnO. A piezoelectric effect is required to create electric potential of ionic charges from elastic deformation; semiconducting property is necessary to separate and maintain the charges and then release the potential via the rectifying behavior of the Schottky barrier at the metal-ZnO interface, which serves as a switch in the entire process. The good conductivity of ZnO is rather unique because it makes the current flow possible. This paper demonstrates a principle for harvesting energy from the environment. The technology has the potential of converting mechanical movement energy (such as body movement, muscle stretching, blood pressure), vibration energy (such as acoustic/ultrasonic wave), and hydraulic energy (such as flow of body fluid, blood flow, contraction of blood vessels) into electric energy that may be sufficient for self-powering nanodevices and nanosystems in applications such as in situ, real-time, and implantable biosensing, biomedical monitoring, and biodetection.

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

Science.gov (United States)

McNamara, J. D.; Phumisithikul, K. L.; Baski, A. A.; Marini, J.; Shahedipour-Sandvik, F.; Das, S.; Reshchikov, M. A.

2016-10-01

The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06 GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

Crystallization kinetics, glass transition kinetics, and thermal stability of Se70-xGa30Inx (x=5, 10, 15, and 20) semiconducting glasses

International Nuclear Information System (INIS)

Imran, Mousa M.A.

2011-01-01

Crystallization and glass transition kinetics of Se 70-x Ga 30 In x (x=5, 10, 15, and 20) semiconducting chalcogenide glasses were studied under non-isothermal condition using a Differential Scanning Calorimeter (DSC). DSC thermograms of the samples were recorded at four different heating rates 5, 10, 15, and 20 K/min. The variation of the glass transition temperature (T g ) with the heating rate (β) was used to calculate the glass transition activation energy (E t ) using two different models. Meanwhile, the variation of the peak temperature of crystallization (T p ) with β was utilized to deduce the crystallization activation energy (E c ) using Kissinger, Augis-Bennet, and Takhor models. Results reveal that E t decreases with increasing In content, while both T g and E c exhibit the opposite behavior, and the crystal growth occurs in one dimension. The variation of these thermal parameters with the average coordination number was also discussed, and the results were interpreted in terms of the type of bonding that In makes with Se. Assessment of thermal stability and glass forming ability (GFA) was carried out on the basis of some quantitative criteria and the results indicate that thermal stability is enhanced while the crystallization rate is reduced with the addition of In to Se-Ga glass. -- Research highlights: → Addition of In to Se-Ga glass decreases the glass transition activation energy. → The crystallization rate in Se-Ga-In glass is reduced as In content increases. → The crystal growth in Se-Ga-In glass occurs in one dimension. → Thermal properties of Se-Ga-In glass indicate a shift in Phillips-Thorpe threshold.

Luminescence of delafossite-type CuAlO2 fibers with Eu substitution for Al cations.

Science.gov (United States)

Liu, Yin; Gong, Yuxuan; Mellott, Nathan P; Wang, Bu; Ye, Haitao; Wu, Yiquan

2016-01-01

CuAlO 2 has been examined as a potential luminescent material by substituting Eu for Al cations in the delafossite structure. CuAlO 2 :Eu 3+ nanofibers have been prepared via electrospinning for the ease of mitigating synthesis requirements and for future optoelectronics and emerging applications. Single-phase CuAlO 2 fibers could be obtained at a temperature of 1100 °C in air. The Eu was successfully doped in the delafossite structure and two strong emission bands at ~405 and 610 nm were observed in the photoluminescence spectra. These bands are due to the intrinsic near-band-edge transition of CuAlO 2 and the f-f transition of the Eu 3+ activator, respectively. Further electrical characterization indicated that these fibers exhibit semiconducting behavior and the introduction of Eu could act as band-edge modifiers, thus changing the thermal activation energies. In light of this study, CuAlO 2 :Eu 3+ fibers with both strong photoluminescence and p-type conductivity could be produced by tailoring the rare earth doping concentrations.

RELATIONSHIP BETWEEN TYPE C BEHAVIOR AND BREAST CANCER

Directory of Open Access Journals (Sweden)

ÁNGELA MARÍA TORRES MARIÑO

2006-10-01

Full Text Available The main objective of this study was to investigate deeply the relationship between Type C behavior pattern andbreast cancer through an analytical observation design of cases and controls. Three groups of variables were established:demographical, medical and risk factors, including in the last one the Type C behavior, for three groups: a women withbreast cancer, b women with cervix cancer, and c healthy women. The changing answer for ‘having breast cancer’ isdetermined by the family history of sickness, having hormone replace therapy, the history of the ovarian and endometrialcancer, and the age of the participants. One concludes that the behavior pattern, so and as is raised until the moment,is related more to the way the disease is faced, than a type of premorbid personality. New factors are proposed in baseof the Five Factor Model, the Temperament and Character set out.

Semiconducting properties of oxide and passive films formed on AISI 304 stainless steel and Alloy 600

Directory of Open Access Journals (Sweden)

Ferreira M. G. S.

2002-01-01

Full Text Available The semiconducting properties of passive films formed on AISI 304 stainless steel and Alloy 600 in borate buffer solution were studied by capacitance (Mott-Schottky approach and photocurrent measurements. Oxide films formed on 304 stainless steel in air at 350 ºC have also been studied. The results obtained show that, in all cases the electronic structure of the films is comparable to that of a p-n heterojunction in which the space charges developed at the metal-film and film-electrolyte interfaces have also to be considered. This is in accordance with analytical results showing that the oxide films are in all cases composed of an inner region rich in chromium oxide and an outer region rich in iron oxide.

Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.

Science.gov (United States)

Cao, Yu; Brady, Gerald J; Gui, Hui; Rutherglen, Chris; Arnold, Michael S; Zhou, Chongwu

2016-07-26

In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.

Thermodynamic analysis of Mg-doped p-type GaN semiconductor

International Nuclear Information System (INIS)

Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

2006-01-01

A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

Bulk and surface event identification in p-type germanium detectors

Science.gov (United States)

Yang, L. T.; Li, H. B.; Wong, H. T.; Agartioglu, M.; Chen, J. H.; Jia, L. P.; Jiang, H.; Li, J.; Lin, F. K.; Lin, S. T.; Liu, S. K.; Ma, J. L.; Sevda, B.; Sharma, V.; Singh, L.; Singh, M. K.; Singh, M. K.; Soma, A. K.; Sonay, A.; Yang, S. W.; Wang, L.; Wang, Q.; Yue, Q.; Zhao, W.

2018-04-01

The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.

First-principles study of direct and narrow band gap semiconducting β-CuGaO2

International Nuclear Information System (INIS)

Nguyen, Manh Cuong; Zhao, Xin; Wang, Cai-Zhuang; Ho, Kai-Ming

2015-01-01

Semiconducting oxides have attracted much attention due to their great stability in air or water and the abundance of oxygen. Recent success in synthesizing a metastable phase of CuGaO 2 with direct narrow band gap opens up new applications of semiconducting oxides as absorber layer for photovoltaics. Using first-principles density functional theory calculations, we investigate the thermodynamic and mechanical stabilities as well as the structural and electronic properties of the β-CuGaO 2 phase. Our calculations show that the β-CuGaO 2 structure is dynamically and mechanically stable. The energy band gap is confirmed to be direct at the Γ point of Brillouin zone. The optical absorption occurs right at the band gap edge and the density of states near the valance band maximum is large, inducing an intense absorption of light as observed in experiment. (paper)

Comparative behavior of americium and plutonium in wastewater

International Nuclear Information System (INIS)

Tsvetaeva, N.E.; Filin, V.M.; Ragimov, T.K.; Rudaya, L.Y.; Shapiro, K.Y.; Shcherbakov, B.Y.

1986-01-01

This paper studies the behavior of trace americium and plutoniumin wastewater fed into purification systems. Activities of the elements were determined on a semiconductive alpha-ray spectrometer. the distributio nonuniformity, or heterogeneity, of americium and plutonium per unit volume of wastewater was determined quantitatively before and after passage through filter papers. The two elements were found to be in a colloidal or pseudocolloidal state in the original wastewater sample at pH 6. On acidifying the wastewater from pH 4 to 1 M nitric acid the americium passed quantitatively into the water phase but the most plutonium remained in the colloidal or pseudocolloidal state. the plutonium also passed quantitatively into the water phase in wastewater at a 1 M nitric acid acidity but only after a prolonged (12-day) hold. A knowledge of the heterogeneity of plutonium and americium in wastewaters made it possible to quickly distinguish their state, i.e., colloidal, pseudocolloidal, or in true solution

Photon radiation damage simulations in CZT semiconducting detectors

International Nuclear Information System (INIS)

Leyva, A.; Pinnera, I.; Cruz, C.; Abreu, Y.; Dona, O.; Diaz, A.

2009-01-01

The use of semiconducting devices based on CZT as X and gamma rays detectors has been extended notably in the last decade thanks to their numerous advantages. The medical imagenology is one of the fields where these detectors have been successfully introduced, for example in positron emission tomography (PET). A typical CZT detector employed PET application was studied applying the Monte Carlo statistical method. All structural and geometric characteristics of the detector as well as the different photon energies usually used in the mentioned applications were considered in the simulations. Taking into account the Oen-Cahn-Holmes classical approach, the effective atomic displacement cross-sections and the number of displacements per atoms were calculated for all atom species and considered photon energies

First-principles study of intrinsic defects in CdO

Science.gov (United States)

Zhukov, V. P.; Medvedeva, N. I.; Krasilnikov, V. N.

2018-03-01

Using the density functional theory (DFT) in the GGA and LSDA + U approximations, we studied the effect of cadmium atoms in the interstitial sites and vacancies in the oxygen and cadmium sublattices on the electronic structure of rock-salt cadmium oxide (CdO). Migration of cadmium atoms into interstitial sites was shown to be unlikely. In the presence of oxygen vacancies, the behavior of CdO remains semiconducting and nonmagnetic. Cadmium vacancies induce d0 ferromagnetism and spin-dependent conductivity, which is semiconducting for spin-up electrons and is p-type metallic for spin-down electrons. The formation energies and free energies were calculated for oxygen vacancies and metallic cadmium phase, which allowed an explanation to be offered for the large number of vacancies and the metallic phase formed during reduction in hydrogen atmosphere.

DFT study of the effect of fluorine atoms on the crystal structure and semiconducting properties of poly(arylene-ethynylene) derivatives

Energy Technology Data Exchange (ETDEWEB)

Moral, Mónica, E-mail: monica.moral@uclm.es [Renewable Energy Research Institute, University of Castilla-La Mancha, Paseo de la Investigación 1, 02071 Albacete (Spain); García, Gregorio [Department of Chemistry, University of Burgos, Plaza Misael Bañuelos, s/n, 09001 Burgos (Spain); Garzón, Andrés [Department of Physical Chemistry, Faculty of Pharmacy, University of Castilla-La Mancha, Paseo de los Estudiantes, 02071 Albacete (Spain); Granadino-Roldán, José M.; Fernández-Gómez, Manuel [Department of Physical and Analytical Chemistry, Faculty of Experimental Sciences, University of Jaén, Campus Las Lagunillas, s/n, 23071 Jaén (Spain)

2016-04-21

The effect of fluorine substitution on the molecular structure, crystal packing, and n-type semiconducting properties of a set of poly(arylene-ethynylene) polymers based on alternating thiadiazole and phenyl units linked through ethynylene groups has been studied by means of Density Functional Theory. As a result, an enlargement in the interplanar distance between cofacial polymer chains, as well as a decrease of the electronic coupling and electron mobility is predicted. On the other hand, fluorination could facilitate electron injection into the material. A polymer containing both alkoxy pendant chains and fluorine atoms is proposed as a compromise solution between efficiency of electron injection and charge transport within the material.

The effect of multiaxial stress state on creep behavior and fracture mechanism of P92 steel

Energy Technology Data Exchange (ETDEWEB)

Chang, Yuan; Xu, Hong, E-mail: xuhong@ncepu.edu.cn; Ni, Yongzhong; Lan, Xiang; Li, Hongyuan

2015-06-11

The creep experiments on plain and double U-typed notched specimens were conducted on P92 steel at 650 °C. The notch strengthening effect was found in the notched specimens. Fracture appearance observed by scanning electron microscopy revealed that dimpled fracture for relatively blunt notched specimen, and dimpled fracture doubled with intergranular brittle fracture for relatively sharp notched specimen, which meant that fracture mechanism of P92 steel altered due to the presence of the notch. Meanwhile, based on Norton–Bailey and Kachanov–Robotnov constitutive models, a modified model was proposed. Finite element simulations were carried out to investigate the effect of multiaxial stress state on the creep behavior, fracture mechanism and damage evolvement of P92 steel. The simulation results agreed well with the fracture behaviors observed experimentally.

P-type silicon drift detectors

International Nuclear Information System (INIS)

Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

1995-06-01

Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

Elaboration of a semiconductive thin film device technology on the basis of monocrystalline gallium arsenide

International Nuclear Information System (INIS)

Antoshenko, V.; Taurbaev, T.; Skirnevskaya, E.; Shorin, V.; Mihajlov, L.; Bajganatova, Sh.

1996-01-01

The aim of the project: To elaborate the economical technological process of preparing super thin monocrystalline GaAs substrates and device structures for semiconductive electronics. To realize the project it is necessary to solve following problems: o to elaborate and produce the equipment for preparing of separated films and thin film multilayer structures with p-n-junction; - to study conditions of preparing plane crystal perfect separated Ga(Al)As - films; - to optimize regimes of preparing thin film structures with p- and n-conductive - layers; - to determine the optimal methods of transferring autonomous films and structures over the second substrates; - to work out preparing methods of ohmic contacts and electrical commutation; - to optimize the process of repeated use of initial monocrystalline GaAs substrate; - to prepare the samples of discrete thin film photo- and emitting devices. As the result of project realization there will be created cheap ecological technology of heterojunction optoelectronic devices on the basis of GaAs and AlGaAs solid solutions, the laboratory samples of thin film devices will be presented

A New Approach to the Computer Modeling of Amorphous Nanoporous Structures of Semiconducting and Metallic Materials: A Review

Science.gov (United States)

Romero, Cristina; Noyola, Juan C.; Santiago, Ulises; Valladares, Renela M.; Valladares, Alexander; Valladares, Ariel A.

2010-01-01

We review our approach to the generation of nanoporous materials, both semiconducting and metallic, which leads to the existence of nanopores within the bulk structure. This method, which we have named as the expanding lattice method, is a novel transferable approach which consists first of constructing crystalline supercells with a large number of atoms and a density close to the real value and then lowering the density by increasing the volume. The resulting supercells are subjected to either ab initio or parameterized—Tersoff-based—molecular dynamics processes at various temperatures, all below the corresponding bulk melting points, followed by geometry relaxations. The resulting samples are essentially amorphous and display pores along some of the “crystallographic” directions without the need of incorporating ad hoc semiconducting atomic structural elements such as graphene-like sheets and/or chain-like patterns (reconstructive simulations) or of reproducing the experimental processes (mimetic simulations). We report radial (pair) distribution functions, nanoporous structures of C and Si, and some computational predictions for their vibrational density of states. We present numerical estimates and discuss possible applications of semiconducting materials for hydrogen storage in potential fuel tanks. Nanopore structures for metallic elements like Al and Au also obtained through the expanding lattice method are reported.

Chaos in long-term behavior of some Bianchi-type VIII models

Energy Technology Data Exchange (ETDEWEB)

Halpern, P

1987-01-01

The long-term behavior of Bianchi-type VIII models with three different types of stress-energy tensors are examined and compared. The vacuum model, a matter-filled model, and a model with an electromagnetic field are considered. In each case the existence of chaotic behavior and transitions to chaotic behavior are discussed.

Prevention of Adolescent Problem Behavior: Longitudinal Impact of the Project P.A.T.H.S. in Hong Kong

Directory of Open Access Journals (Sweden)

Daniel T. L. Shek

2011-01-01

Full Text Available The present study attempts to examine the longitudinal impact of a curriculum-based positive youth development program, entitled the Project P.A.T.H.S. (Positive Adolescent Training through Holistic Social Programmes, on adolescent problem behavior in Hong Kong. Using a longitudinal randomized group design, six waves of data were collected from 19 experimental schools (n = 3,797 at Wave 1 in which students participated in the Project P.A.T.H.S. and 24 control schools (n = 4,049 at Wave 1. At each wave, students responded to questions asking about their current problem behaviors, including delinquency and use of different types of drugs, and their intentions of engaging in such behaviors in the future. Results based on individual growth curve modeling generally showed that the participants displayed lower levels of substance abuse and delinquent behavior than did the control students. Participants who regarded the program to be helpful also showed lower levels of problem behavior than did the control students. The present findings suggest that the Project P.A.T.H.S. is effective in preventing adolescent problem behavior in the junior secondary school years.

Lowest-order corrections to the RPA polarizability and GW self-energy of a semiconducting wire

NARCIS (Netherlands)

Groot, de H.J.; Ummels, R.T.M.; Bobbert, P.A.; van Haeringen, W.

1996-01-01

We present the results of the addition of lowest-order vertex and self-consistency corrections to the RPA polarizability and the GW self-energy for a semiconducting wire. It is found that, when starting from a local density approximation zeroth-order Green function and systematically including these

Charge-carrier mobilities in disordered semiconducting polymers: effects of carrier density and electric field [refereed

NARCIS (Netherlands)

Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, de D.M.; Michels, M.A.J.

2006-01-01

We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solns. of the Master equation, we study the dependence of the charge-carrier mobility

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Science.gov (United States)

Ma, Y. J.; Zhang, Y. G.; Gu, Y.; Xi, S. P.; Chen, X. Y.; Liang, Baolai; Juang, Bor-Chau; Huffaker, Diana L.; Du, B.; Shao, X. M.; Fang, J. X.

2017-07-01

We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm-3, and for Be densities below 9.5×1017 cm-3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm-3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Y. J. Ma

2017-07-01

Full Text Available We report structural properties as well as electrical and optical behaviors of beryllium (Be-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.

Scintillation properties of semiconducting {sup 6}LiInSe{sub 2} crystals to ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Wiggins, Brenden [Y-12 National Security Complex, Oak Ridge, TN (United States); Vanderbilt University, Nashville, TN (United States); Groza, Michael; Tupitsyn, Eugene [Fisk University, Nashville, TN (United States); Lukosi, Eric [University of Tennessee, Knoxville, TN (United States); Stassun, Keivan; Burger, Arnold [Vanderbilt University, Nashville, TN (United States); Fisk University, Nashville, TN (United States); Stowe, Ashley [Y-12 National Security Complex, Oak Ridge, TN (United States); Vanderbilt University, Nashville, TN (United States); University of Tennessee, Knoxville, TN (United States)

2015-11-21

{sup 6}LiInSe{sub 2} has gained attention recently as a semiconducting thermal neutron detector. As presented herein, the chalcogenide compound semiconductor also detects incident neutrons via scintillation, making {sup 6}LiInSe{sub 2} the only lithium containing semiconductor to respond to neutrons via both detection mechanisms. Both yellow and red crystals, which appear in the literature, were investigated. Only the yellow crystal responded favorably to ionizing radiation, similar to the semiconducting operation utilizing electrodes. The obtained light yield for yellow crystals is 4400 photons/MeV, referenced to Bi{sub 4}Ge{sub 3}O{sub 12} (BGO).The estimated thermal neutron light yield was 21,000 photons/thermal neutron. The two measured decay time components were found to be 31±1 ns (49%) and 143±9 ns (51%).This crystal provides efficient, robust detection of neutrons via scintillation with respectable light yield and rapid response, enabling its use for a broad array of neutron detection applications.

Template-based preparation of free-standing semiconducting polymeric nanorod arrays on conductive substrates.

Science.gov (United States)

Haberkorn, Niko; Weber, Stefan A L; Berger, Rüdiger; Theato, Patrick

2010-06-01

We describe the synthesis and characterization of a cross-linkable siloxane-derivatized tetraphenylbenzidine (DTMS-TPD), which was used for the fabrication of semiconducting highly ordered nanorod arrays on conductive indium tin oxide or Pt-coated substrates. The stepwise process allow fabricating of macroscopic areas of well-ordered free-standing nanorod arrays, which feature a high resistance against organic solvents, semiconducting properties and a good adhesion to the substrate. Thin films of the TPD derivate with good hole-conducting properties could be prepared by cross-linking and covalently attaching to hydroxylated substrates utilizing an initiator-free thermal curing at 160 degrees C. The nanorod arrays composed of cross-linked DTMS-TPD were fabricated by an anodic aluminum oxide (AAO) template approach. Furthermore, the nanorod arrays were investigated by a recently introduced method allowing to probe local conductivity on fragile structures. It revealed that more than 98% of the nanorods exhibit electrical conductance and consequently feature a good electrical contact to the substrate. The prepared nanorod arrays have the potential to find application in the fabrication of multilayered device architectures for building well-ordered bulk-heterojunction solar cells.

Contaminant degradation by irradiated semiconducting silver chloride particles: kinetics and modelling.

Science.gov (United States)

Ma, Tian; Garg, Shikha; Miller, Christopher J; Waite, T David

2015-05-15

The kinetics and mechanism of light-mediated formic acid (HCOO(-)) degradation in the presence of semiconducting silver chloride particles are investigated in this study. Our experimental results show that visible-light irradiation of AgCl(s) results in generation of holes and electrons with the photo-generated holes and its initial oxidation product carbonate radical, oxidizing HCOO(-) to form CO2. The HCOO(-) degradation rate increases with increase in silver concentration due to increase in rate of photo-generation of holes while the increase in chloride concentration decreases the degradation rate of HCOO(-) as a result of the scavenging of holes by Cl(-), thereby resulting in decreased holes and carbonate radical concentration. The results obtained indicate that a variety of other solution conditions including dioxygen concentration, bicarbonate concentration and pH influence the availability of holes and hence the HCOO(-) degradation rate in a manner consistent with our understanding of key processes. Based on our experimental results, we have developed a kinetic model capable of predicting AgCl(s)-mediated HCOO(-) photo-degradation over a wide range of conditions. Copyright © 2014 Elsevier Inc. All rights reserved.

Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: A first-principles study

KAUST Repository

Feng, Nan

2014-03-26

Magnetic and electronic properties of Fe4N(111)/MoS 2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) FeIFe II-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between FeI/Fe II and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe I. For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices. © 2014 American Chemical Society.

Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: A first-principles study

KAUST Repository

Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlö gl, Udo; Bai, Haili

2014-01-01

Magnetic and electronic properties of Fe4N(111)/MoS 2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) FeIFe II-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between FeI/Fe II and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe I. For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices. © 2014 American Chemical Society.

Metallic → Semiconducting transitions in HX(X=F, Br, Cl) adsorbed (5,5) and (7,7) carbon nanotubes: DFT study

Science.gov (United States)

Srivastava, Reena; Shrivastava, Sadhana; Srivastava, Anurag

2018-05-01

The edge sensitivity of two different chirality (5,5) and (7,7) armchair carbon nanotubes towards toxic hydrogen halides (HF, HBr and HCl) has been analyzed by using density functional theory based ab-initio approach. The edge sensitivity has been discussed in terms of the variations in the electronic band structure of (5,5) and (7,7) carbon nanotube. The observation shows metallic to semiconducting phase transition in HF and HBr adsorbed (5,5) CNT, whereas for HCl adsorbed, it is more metallic. Whereas HBr and HCl adsorbed (7,7) CNT confirms metallic→semiconducting transition and shows diameter dependence of properties of CNTs.

Transparent semiconducting oxides: materials and devices

Energy Technology Data Exchange (ETDEWEB)

Grundmann, Marius; Frenzel, Heiko; Lajn, Alexander; Lorenz, Michael; Schein, Friedrich; von Wenckstern, Holger [Universitaet Leipzig, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

2010-06-15

Transparent conductive oxides (TCOs) are a well-known material class allowing Ohmic conduction. A large free carrier concentration in the 10{sup 21} cm{sup -3} range and high conductivity (beyond 10{sup 4} S/cm) is feasible simultaneously with high transparency. Applications are manifold and include touch screens and front contacts for displays or solar cells. Transparent semiconducting oxides (TSO) are oxides with an intermediate free carrier concentration (typically 10{sup 14}-10{sup 18} cm{sup -3}) allowing the formation of depletion layers. We review recent results on TSO-based transistors and inverters. Most work has been reported on MISFETs. We show that MESFETs exhibit high performance and low voltage operation of oxide electronics. MESFET-based inverters offer superior performance compared to results reported for TSO MISFET-based circuits. Optical image of inverter based on thin film MESFETs with Mg{sub 0.003}Zn{sub 0.997}O channels (left) and experimental inverter characteristic for supply voltage of V{sub DD} = + 2.0 V (right). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

N-type organic electrochemical transistors with stability in water

KAUST Repository

Giovannitti, Alexander

2016-10-07

Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

N-type organic electrochemical transistors with stability in water

KAUST Repository

Giovannitti, Alexander; Nielsen, Christian B.; Sbircea, Dan-Tiberiu; Inal, Sahika; Donahue, Mary; Niazi, Muhammad Rizwan; Hanifi, David A.; Amassian, Aram; Malliaras, George G.; Rivnay, Jonathan; McCulloch, Iain

2016-01-01

Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

Charged-particle spectroscopy in organic semiconducting single crystals

Energy Technology Data Exchange (ETDEWEB)

Ciavatti, A.; Basiricò, L.; Fraboni, B. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Sellin, P. J. [Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Fraleoni-Morgera, A. [ELETTRA-Sincrotrone Trieste, Strada Statale 14, Km 163.5, Basovizza, Trieste (Italy); Department of Engineering and Architecture, University of Trieste, V. Valerio 10, 34100 Trieste (Italy); CNR-Nano S3 Institute, Via Campi 213/A, 41125 Modena (Italy)

2016-04-11

The use of organic materials as radiation detectors has grown, due to the easy processability in liquid phase at room temperature and the possibility to cover large areas by means of low cost deposition techniques. Direct charged-particle detectors based on solution-grown Organic Semiconducting Single Crystals (OSSCs) are shown to be capable to detect charged particles in pulse mode, with very good peak discrimination. The direct charged-particle detection in OSSCs has been assessed both in the planar and in the vertical axes, and a digital pulse processing algorithm has been used to perform pulse height spectroscopy and to study the charge collection efficiency as a function of the applied bias voltage. Taking advantage of the charge spectroscopy and the good peak discrimination of pulse height spectra, an Hecht-like behavior of OSSCs radiation detectors is demonstrated. It has been possible to estimate the mobility-lifetime value in organic materials, a fundamental parameter for the characterization of radiation detectors, whose results are equal to μτ{sub coplanar} = (5 .5 ± 0.6 ) × 10{sup −6} cm{sup 2}/V and μτ{sub sandwich} = (1 .9 ± 0.2 ) × 10{sup −6} cm{sup 2}/V, values comparable to those of polycrystalline inorganic detectors. Moreover, alpha particles Time-of-Flight experiments have been carried out to estimate the drift mobility value. The results reported here indicate how charged-particle detectors based on OSSCs possess a great potential as low-cost, large area, solid-state direct detectors operating at room temperature. More interestingly, the good detection efficiency and peak discrimination observed for charged-particle detection in organic materials (hydrogen-rich molecules) are encouraging for their further exploitation in the detection of thermal and high-energy neutrons.

P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

KAUST Repository

Wang, Zhenwei

2018-01-01

, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s

Type A behavior pattern, accident optimism and fatalism: an investigation into non-compliance with safety work behaviors among hospital nurses.

Science.gov (United States)

Ugwu, Fabian O; Onyishi, Ike E; Ugwu, Chidi; Onyishi, Charity N

2015-01-01

Safety work behavior has continued to attract the interest of organizational researchers and practitioners especially in the health sector. The goal of the study was to investigate whether personality type A, accident optimism and fatalism could predict non-compliance with safety work behaviors among hospital nurses. One hundred and fifty-nine nursing staff sampled from three government-owned hospitals in a state in southeast Nigeria, participated in the study. Data were collected through Type A Behavior Scale (TABS), Accident Optimism, Fatalism and Compliance with Safety Behavior (CSB) Scales. Our results showed that personality type A, accident optimism and fatalism were all related to non-compliance with safety work behaviors. Personality type A individuals tend to comply less with safety work behaviors than personality type B individuals. In addition, optimistic and fatalistic views about accidents and existing safety rules also have implications for compliance with safety work behaviors.

On Allosteric Modulation of P-Type Cu+-ATPases

DEFF Research Database (Denmark)

Mattle, Daniel; Sitsel, Oleg; Autzen, Henriette Elisabeth

2013-01-01

P-type ATPases perform active transport of various compounds across biological membranes and are crucial for ion homeostasis and the asymmetric composition of lipid bilayers. Although their functional cycle share principles of phosphoenzyme intermediates, P-type ATPases also show subclass...... of intramembranous Cu+ binding, and we suggest an alternative role for the proposed second site in copper translocation and proton exchange. The class-specific features demonstrate that topological diversity in P-type ATPases may tune a general energy coupling scheme to the translocation of compounds with remarkably...

Crystal structure, dielectric, ferroelectric and energy storage properties of La-doped BaTiO3 semiconducting ceramics

Directory of Open Access Journals (Sweden)

Venkata Sreenivas Puli

2015-09-01

Full Text Available Polycrystalline La-doped BaTiO3 (Ba(1-xLax\tTiO3 [x=0,0.0005,0.001,0.003] ceramics (denoted as BTO,BLT1,BLT2,BLT3 were synthesized by conventional solid-state reaction method and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, and Raman spectroscopy. XRD and Raman spectra revealed single-phase tetragonal perovskite crystalline structure. Well-saturated polarization–electric field (P–E hysteresis loops were observed with the measurement frequency of 50 Hz at room temperature and confirmed ferroelectric nature of these ceramics and a high recoverable electrical energy storage density of 0.350 J/cm3 with energy efficiency (n∼9%, which is useful in energy storage capacitor applications. Dielectric studies revealed anomalies around 415–420 K and near the Curie temperature. The latter is attributed to the ferroelectric to paraelectric phase transition. Better dielectric performances were obtained for La-doped samples sintered at 1350°C for 4 h. Grain growth is inhibited with lanthanum (La incorporation into the BTO lattice. Room temperature semiconducting behavior with positive temperature coefficient of resistivity (PTCR behavior at TC is attributed to electron compensation mechanism.

Electrostatic potential in a bent piezoelectric nanowire with consideration of size-dependent piezoelectricity and semiconducting characterization

Science.gov (United States)

Wang, K. F.; Wang, B. L.

2018-06-01

Determining the electric potential in a bent piezoelectric nanowire (NW) is a fundamental issue of nanogenerators and nanopiezotronics. The combined influence of the flexoelectric effect, the semiconducting performance and the angle of atomic force microscope (AFM) tip has never been studied previously and will be investigated in this paper. The exact solution for the electric potential of a bent piezoelectric semiconductor NW is derived. The electric potential of the present model with consideration of flexoelectric effect varies along the length of the NW and is different from that of the classical piezoelectric model. Flexoelectric effect enhances but the semiconducting performance reduces the electric potential of the NW. In addition, it is found that if the angle of the AFM tip reaches 30°, the error of the electric potential obtained from the model ignored the effect of the angle of the AFM tip is almost 16%, which is unacceptable.

Sorption behavior of cesium on various soils under different pH levels

International Nuclear Information System (INIS)

Giannakopoulou, F.; Haidouti, C.; Chronopoulou, A.; Gasparatos, D.

2007-01-01

In the present study we investigated the sorption behavior of Cs in four different soils (sandyloam, loam, clayloam and clay) by using batch experiment. Cs sorption characteristics of the studied soils were examined at 4 mg L -1 Cs concentration, at various pH levels, at room temperature and with 0.01 M CaCl 2 as a background electrolyte. Among different soils the decrease of k d (distribution coefficient) of cesium, at all pH levels, followed the sequence sandyloam > loam > clayloam > clay, indicating that the particle size fractions and especially the clay content plays predominant role on sorption of Cs. The effect of pH on cesium sorption displays a similar pattern for all soils, depending on soil type. At acid pH levels less cesium was sorbed, due to a greater competition with other cations for available sorption sites. The maximum sorption of Cs was observed at pH 8, where the negative charge density on the surface of the absorbents was the highest. For all soils was observed significantly lower Cs sorption at pH 10

Binge-type behavior in rats consuming trans-fat-free shortening.

Science.gov (United States)

Wojnicki, F H E; Charny, G; Corwin, R L W

2008-07-05

Studies from this and another laboratory involving an animal model of binge-type behavior have used vegetable shortening containing trans-fats. Due to reformulations by vegetable shortening manufacturers to remove trans-fats from their products, only trans-fat-free shortenings are now available. The goal of the present study was to assess binge-type behavior in rats with trans-fat and trans-free vegetable shortening. Trans-fat-free shortening was provided to three different groups of non-food-deprived male Sprague Dawley rats on different schedules of access: continuous access (24 h/day-7 days/week), daily access (1 h every day), and intermittent access (1 h on Mondays, Wednesdays, Fridays). Trans-fat shortening was provided to a fourth group on the intermittent access schedule. A fifth group had no shortening access (chow only). Both intermittent groups (trans-fat-free and trans-fat) consumed significantly more shortening during the 1-h period of availability than did the daily group, and there was no difference in shortening intakes between the intermittent groups. These results are identical to previous reports of binge-type behavior in rats using this model. Thus, binge-type behavior in the present behavioral model depends upon the schedule of access, not the presence of trans-fats in the shortening.

Understanding self-monitoring of blood glucose among individuals with type 1 and type 2 diabetes: an information-motivation-behavioral skills analysis.

Science.gov (United States)

Fisher, William A; Kohut, Taylor; Schachner, Holly; Stenger, Patricia

2011-01-01

To evaluate self-monitoring of blood glucose (SMBG) information deficits, motivational obstacles, and behavioral skills limitations in individuals with type 1 and type 2 diabetes, and to assess the relationship of these deficits with SMBG frequency. Individuals with type 1 (n = 208; 103 male, 105 female) and type 2 (n = 218; 107 male, 111 female) diabetes participated in an online survey assessing SMBG information, motivation, behavioral skills, and behavior. A substantial proportion of participants scored as SMBG uninformed, unmotivated, and unskilled on specific assessment items. SMBG information, motivation, and behavioral skills deficits were significantly correlated with SMBG frequency, such that individuals with type 1 or type 2 diabetes, who were less informed, less motivated, and less behaviorally skilled, reported lower frequency of SMBG. Common and consequential SMBG information, motivation, and behavioral skills deficits were present, and patients with these gaps were less likely to test frequently. Clinical education focusing on relevant SMBG information, motivation to act, and behavioral skills for acting effectively may be a priority.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

Science.gov (United States)

McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

2017-03-28

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

[The influence of cognitive-behavioral therapy on the P300 potential in children with psychogenic nonepileptic seizures and tension headache].

Science.gov (United States)

Stolarska-Weryńska, Urszula; Steczkowska, Małgorzata; Kaciński, Marek

2016-01-01

Explaining associations between neurophysiological and neuropsychological parameteres in children and improving the measurement methods would lead to a better understanding of the pathogenesis and course of psychosomatic disease. Goal: clinical assessment of the efficacy of cognitive-behavioral therapy in the treatment of psychogenic no- nepileptic seizures and tension type headaches in children. Determining the influence of cognitive behavioral therapy on the cognitive P300 potential and whether P300 parameters in children correlate with neuropsychological parameters. 20 children with nonepileptic psychogenic seizures and 30 children with tension type headaches, aged 11.3 - 17.11 years. The final diagnosis was made in the Paediatric Neurology Clinic. The P300 examination was performed before/after therapy, with/without hyperventilation. A fixed structure therapy was implemented (10 sessions, 90 minutes each), during two weeks of hospitalization or in an outpatient clinic (9 children with tension type headache). The psychological assessment comprised of temperament questionnaires, auditory and visual memory trials, executive function and attention trials, and in some cases also intelligence testing. More significant correlations were found in children with psychogenic seizures: attention parameters correlated negatively with reaction time, and this correlation tended to fade in the second examination, after psychotherapy. In children with tension type headache a statistically insignificant tendency was found of a positive correlation between those parameters. Medium P300 parameteres in this group were better. In 17/20 of children with psychogenic seizures a clinical improvement was observed, in 3 children the symptoms persisted in a 6 month follow up, but of a lower frequency. In 11/27 of chil- dren with tension headache the symptoms persisted, also with a lower frequency. cognitive-behavioral therapy is effective in the reduction of symptoms in many cases of

An analysis of fat-related and fiber-related behavior in men and women with type 2 diabetes mellitus: key findings for clinical practice.

Science.gov (United States)

Hendrychova, Tereza; Vytrisalova, Magda; Vlcek, Jiri; Smahelova, Alena; Kubena, Ales Antonin

2013-01-01

Despite the efforts of health care providers, adherence of patients with type 2 diabetes to the recommended diet is poor. The aim of this study was to describe the eating habits with emphasis on fat and fiber-related behavior (FFB) as well as the relationship between FFB behavior and parameters of diabetes control in men and women with type 2 diabetes mellitus. The subjects in this observational cross-sectional study were 200 patients (54.5% male, mean age 66.2 ± 10.1 years, mean Diabetes Control and Complications Trial [DDCT] glycosylated hemoglobin [HbA1c] 7.6% ± 1.7%) recruited from diabetes outpatient clinics in the Czech Republic. The subjects filled out the Fat- and Fiber-related Diet Behavior Questionnaire. The most recent patient data on diabetes control and drug therapy were derived from patient medical records. Patients tend to modify the dishes they are used to, rather than remove them completely from their diet and replace them by other types of foods. It is easier to perform healthier fat-related behaviors than fiber-related ones. Women scored significantly better than men on the fat-related diet habits summary scale (P = 0.002), as well as on "modify meat" (P = 0.001) and "substitute specially manufactured low-fat foods" (P = 0.045) subscales. A better score on the fat-related diet habits summary scale was significantly associated with higher HbA1c (ρ = -0.248; P = 0.027) and higher waist circumference (ρ = -0.254; P = 0.024) in women. Type 2 diabetes patients are likely to vary in their FFB behavior, and their dietary habits depend on gender. Health care professionals should pay attention to these facts when providing specific education. Emphasis should be placed on how to increase the fiber intake in diabetic patients.

Resonant photoemission at the Ga 3p photothreshold in In xGa1-xN

International Nuclear Information System (INIS)

Colakerol, L.; Glans, P.-A.; Plucinski, L.; Zhang, Y.; Smith, K.E.; Zakharov, A.A.; Nyholm, R.; Cabalu, J.; Moustakas, T.D.

2006-01-01

Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film In x Ga 1-x N alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d 8 state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of In x Ga 1-x N thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases

Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

International Nuclear Information System (INIS)

Jung, Hye-Mi; Um, Sukkee

2016-01-01

Highly oriented crystalline hybrid thin films primarily consisting of Magnéli-phase VO 2 and conductive graphene nanoplatelets are fabricated by a sol–gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VO x ) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 Å and a crystallographic tensile strain of 0.83%. In addition, GO-derived VO x composite semiconducting films, which have an sp 3 /sp 2 bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of − 20 °C to 140 °C, with a transition temperature of approximately 65 °C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template as well as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magnéli-phase VO x composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. - Highlights: • VO x -graphene oxide composite (G/VO x ) films were fabricated by sol–gel process. • The G/VO x films mainly consisted of Magnéli-phase VO 2 and reduced graphene sheets. • The G/VO x films exhibited multi-lamellar textures with planar VO x nanowire arrays. • The G/VO x films showed the thermo-sensitive electrical switching properties. • Effects of GOs on the electrical characteristics of the G/VO x films were discussed.

Lifestyle behaviors and ethnic identity among diverse women at high risk for type 2 diabetes.

Science.gov (United States)

Brown, Susan D; Ehrlich, Samantha F; Kubo, Ai; Tsai, Ai-Lin; Hedderson, Monique M; Quesenberry, Charles P; Ferrara, Assiamira

2016-07-01

Diet and physical activity lifestyle behaviors are modifiable risk factors for type 2 diabetes and are shaped by culture, potentially influencing diabetes health disparities. We examined whether ethnic identity-the strength of attachment to one's ethnic group, and a long-standing focus of psychological research-could help account for variations in lifestyle behaviors within a diverse population at high risk for chronic disease. Using data from the Gestational Diabetes' Effects on Moms trial, this US-based cross-sectional study included 1463 pregnant women (74% from minority ethnic/racial groups; 46% born outside the US) with gestational diabetes (GDM), a common pregnancy complication conferring high risk for type 2 diabetes after delivery. Mixed linear regression models examined whether ethnic identity is associated with lifestyle behaviors after adjusting for demographic, clinical, and acculturative characteristics (e.g., nativity and length of residence in the US). In the overall sample, a one-unit increase in ethnic identity score was significantly associated with 3% greater fiber intake, 4% greater fruit/vegetable intake, 11% greater total activity, and 11% greater walking (p values ethnic/racial groups, a one-unit increase in ethnic identity score was significantly associated with 17% greater fiber intake among Filipina women; 5% lower total caloric intake among non-Hispanic White women; and 40% greater total activity, 35% greater walking, and 8% greater total caloric intake among Latina women (p values ≤ 0.03). Results from this large study suggest that ethnic group attachment is associated with some lifestyle behaviors, independent of acculturation indicators, among young women with GDM who are at high risk for type 2 diabetes. Stronger ethnic identity may promote certain choices known to be associated with reduced risk of type 2 diabetes. Prospective research is needed to clarify the temporal nature of associations between ethnic identity and

Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

KAUST Repository

Yue, Wan

2016-09-28

Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

Semiconducting, Magnetic or Superconducting Nanoparticles encapsulated in Carbon Shells by RAPET method.

Directory of Open Access Journals (Sweden)

Aharon Gedanken

2008-06-01

Full Text Available An efficient, solvent-free, environmentally friendly, RAPET (Reactions under Autogenic Pressure at Elevated Temperaturesynthetic approach is discussed for the fabrication of core-shell nanostructures. The semiconducting, magnetic orsuperconducting nanoparticles are encapsulated in a carbon shell. RAPET is a one-step, thermal decomposition reaction ofchemical compound (s followed by the formation of core-shell nanoparticles in a closed stainless steel reactor. Therepresentative examples are discussed, where a variety of nanomaterials are trapped in situ in a carbon shell that offersfascinating properties.

Electrostatic potential in a bent piezoelectric nanowire with consideration of size-dependent piezoelectricity and semiconducting characterization.

Science.gov (United States)

Wang, Kaifa; Wang, Baolin

2018-03-26

Determining the electric potential in a bent piezoelectric nanowire (NW) is a fundamental issue of nanogenerators and nanopiezotronics. The combined influence of the flexoelectric effect, the semiconducting performance and the angle of atomic force microscope (AFM) tip has never been studied previously and will be investigated in this paper. The exact solution for the electric potential of a bent piezoelectric semiconductor NW is derived. The electric potential of the present model with consideration of flexoelectric effect varies along the length of the NW and is different from that of the classical piezoelectric model. Flexoelectric effect enhances but the semiconducting performance reduces the electric potential of the NW. In addition, it is found that if the angle of the AFM tip reaches 30 degrees, the error of the electric potential obtained from the model ignored the effect of the angle of the AFM tip is almost 16%, which is unacceptable. © 2018 IOP Publishing Ltd.

Particle detectors based on semiconducting InP epitaxial layers

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan; Žďánský, Karel

2011-01-01

Roč. 6, C01072 (2011), C010721-C010725 ISSN 1748-0221 R&D Projects: GA AV ČR KJB200670901; GA MŠk(CZ) OC10021; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : Solid state detectors * Gamma detectors * Radiation-hard detectors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

Tunable Semiconducting Polymer Nanoparticles with INDT-Based Conjugated Polymers for Photoacoustic Molecular Imaging.

Science.gov (United States)

Stahl, Thomas; Bofinger, Robin; Lam, Ivan; Fallon, Kealan J; Johnson, Peter; Ogunlade, Olumide; Vassileva, Vessela; Pedley, R Barbara; Beard, Paul C; Hailes, Helen C; Bronstein, Hugo; Tabor, Alethea B

2017-06-21

Photoacoustic imaging combines both excellent spatial resolution with high contrast and specificity, without the need for patients to be exposed to ionizing radiation. This makes it ideal for the study of physiological changes occurring during tumorigenesis and cardiovascular disease. In order to fully exploit the potential of this technique, new exogenous contrast agents with strong absorbance in the near-infrared range, good stability and biocompatibility, are required. In this paper, we report the formulation and characterization of a novel series of endogenous contrast agents for photoacoustic imaging in vivo. These contrast agents are based on a recently reported series of indigoid π-conjugated organic semiconductors, coformulated with 1,2-dipalmitoyl-sn-glycero-3-phosphocholine, to give semiconducting polymer nanoparticles of about 150 nm diameter. These nanoparticles exhibited excellent absorption in the near-infrared region, with good photoacoustic signal generation efficiencies, high photostability, and extinction coefficients of up to three times higher than those previously reported. The absorption maximum is conveniently located in the spectral region of low absorption of chromophores within human tissue. Using the most promising semiconducting polymer nanoparticle, we have demonstrated wavelength-dependent differential contrast between vasculature and the nanoparticles, which can be used to unambiguously discriminate the presence of the contrast agent in vivo.

Amphiphilic semiconducting polymer as multifunctional nanocarrier for fluorescence/photoacoustic imaging guided chemo-photothermal therapy.

Science.gov (United States)

Jiang, Yuyan; Cui, Dong; Fang, Yuan; Zhen, Xu; Upputuri, Paul Kumar; Pramanik, Manojit; Ding, Dan; Pu, Kanyi

2017-11-01

Chemo-photothermal nanotheranostics has the advantage of synergistic therapeutic effect, providing opportunities for optimized cancer therapy. However, current chemo-photothermal nanotheranostic systems generally comprise more than three components, encountering the potential issues of unstable nanostructures and unexpected conflicts in optical and biophysical properties among different components. We herein synthesize an amphiphilic semiconducting polymer (PEG-PCB) and utilize it as a multifunctional nanocarrier to simplify chemo-photothermal nanotheranostics. PEG-PCB has a semiconducting backbone that not only serves as the diagnostic component for near-infrared (NIR) fluorescence and photoacoustic (PA) imaging, but also acts as the therapeutic agent for photothermal therapy. In addition, the hydrophobic backbone of PEG-PCB provides strong hydrophobic and π-π interactions with the aromatic anticancer drug such as doxorubicin for drug encapsulation and delivery. Such a trifunctionality of PEG-PCB eventually results in a greatly simplified nanotheranostic system with only two components but multimodal imaging and therapeutic capacities, permitting effective NIR fluorescence/PA imaging guided chemo-photothermal therapy of cancer in living mice. Our study thus provides a molecular engineering approach to integrate essential properties into one polymer for multimodal nanotheranostics. Copyright © 2017 Elsevier Ltd. All rights reserved.

Study of the energy band in n-type GaAs and p-type In P by transmission and photoluminescence spectroscopy

International Nuclear Information System (INIS)

Banai, N.; Khanzadeh, M.

1998-01-01

Optical characterization of the n-type In P grown by horizontal Bridgman method was carried out using modular photoluminescence and optical transmission spectroscopy. The measured transmission spectra at room temperature using Cary 17 DX spectrophotometer reveals the band gap energies of 1.4 and 1.34 eV for p-type In P and the n-type GaAs, respectively. Photoluminescence spectra of the above samples was measured at 77 K with the excitation intensity of (20 W/Cm 2 ). The (B-A) transitions occur at 1.405 eV and at 1.382 eV respectively. Three spectra were observed for the n-type GaAs sample, namely, (B-B), (B-A) and another relatively wide spectra at wavelengths above the absorption edge caused by the deep level impurities. The peak position of these spectra are 1.482, 1.4 and 1.36 eV respectively. (author)

Copper Selenidophosphates Cu4P2Se6, Cu4P3Se4, Cu4P4Se3, and CuP2Se, Featuring Zero-, One-, and Two-Dimensional Anions.

Science.gov (United States)

Kuhn, Alexander; Schoop, Leslie M; Eger, Roland; Moudrakovski, Igor; Schwarzmüller, Stefan; Duppel, Viola; Kremer, Reinhard K; Oeckler, Oliver; Lotsch, Bettina V

2016-08-15

Five new compounds in the Cu/P/Se phase diagram have been synthesized, and their crystal structures have been determined. The crystal structures of these compounds comprise four previously unreported zero-, one-, and two-dimensional selenidophosphate anions containing low-valent phosphorus. In addition to two new modifications of Cu4P2Se6 featuring the well-known hexaselenidohypodiphosphate(IV) ion, there are three copper selenidophosphates with low-valent P: Cu4P3Se4 contains two different new anions, (i) a monomeric (zero-dimensional) selenidophosphate anion [P2Se4](4-) and (ii) a one-dimensional selenidophosphate anion [Formula: see text], which is related to the well-known gray-Se-like [Formula: see text] Zintl anion. Cu4P4Se3 contains one-dimensional [Formula: see text] polyanions, whereas CuP2Se contains the 2D selenidophosphate [Formula: see text] polyanion. It consists of charge-neutral CuP2Se layers separated by a van der Waals gap which is very rare for a Zintl-type phase. Hence, besides black P, CuP2Se constitutes a new possible source of 2D oxidized phosphorus containing layers for intercalation or exfoliation experiments. Additionally, the electronic structures and some fundamental physical properties of the new compounds are reported. All compounds are semiconducting with indirect band gaps of the orders of around 1 eV. The phases reported here add to the structural diversity of chalcogenido phosphates. The structural variety of this family of compounds may translate into a variety of tunable physical properties.

Ohmic Contacts to P-Type SiC

National Research Council Canada - National Science Library

Crofton, John

2000-01-01

Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

Science.gov (United States)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

2017-07-01

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

International Nuclear Information System (INIS)

Sun, Chang; Rougieux, Fiacre E.; Macdonald, Daniel

2014-01-01

Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr i and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ n /σ p of Cr i and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

Science.gov (United States)

Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

2018-03-01

n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

The relationship of parenting styles and social competency to Type A behavior in children.

Science.gov (United States)

Harralson, T L; Lawler, K A

1992-10-01

This study examined parenting styles, Type A behavior in parents and children, and social competence in children. Fifty 1st-6th grade children, parents, and their teachers participated. Type A behavior in parents was associated with a controlling style of parenting, but not with pressuring the child to achieve. Parenting styles of achievement pressure and high control were related to impatient and aggressive behaviors in children, as measured by the MYTH, a teacher-scored Type A behavior instrument. In addition, impatience and aggressiveness in the children were negatively correlated with the child's social competency and ability to function in school. Parenting practices, Type A behavior, and social competency in children may play important roles in the origins of detrimental components of Type A behavior, such as impatience and aggression.

Study of araldite in edge protection of n-type and p-type surface barrier detectors

International Nuclear Information System (INIS)

Alencar, M.A.V.; Jesus, E.F.O.; Lopes, R.T.

1995-01-01

The aim of this work is the realization of a comparative study between the surface barrier detectors performance n and type using the epoxy resin Araldite as edge protection material with the purpose of determining which type of detector (n or p) the use of Araldite is more indicated. The surface barrier detectors were constructed using n and p type silicon wafer with resistivity of 3350Ω.cm and 5850 Ω.cm respectively. In the n type detectors, the metals used as ohmic and rectifier contacts were the Al and Au respectively, while in the p type detectors, the ohmic and rectifier contacts were Au and Al. All metallic contacts were done by evaporation in high vacuum (∼10 -4 Torr) and with deposit of 40 μm/cm 2 . The obtained results for the detectors (reverse current of -350nA and resolution from 21 to 26 keV for p type detectors and reserve current of 1μA and resolution from 44 to 49 keV for n type detectors) tend to demonstrate that use of epoxy resin Araldite in the edge protection is more indicated to p type surface barrier detectors. (author). 3 refs., 4 figs., 1 tab

P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

KAUST Repository

Al-Jawhari, Hala A.

2013-10-09

P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

Nanoscale semiconducting silicon as a nutritional food additive

Energy Technology Data Exchange (ETDEWEB)

Canham, L T [pSiNutria Ltd, Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom)

2007-05-09

Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

Nanoscale semiconducting silicon as a nutritional food additive

International Nuclear Information System (INIS)

Canham, L T

2007-01-01

Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study

Activities towards p-type doping of ZnO

International Nuclear Information System (INIS)

Brauer, G; Kuriplach, J; Ling, C C; Djurisic, A B

2011-01-01

Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

Activities towards p-type doping of ZnO

Energy Technology Data Exchange (ETDEWEB)

Brauer, G [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Kuriplach, J [Department of Low Temperature Physics, Charles University, V Holetovickach 2, CZ-18000 Prague (Czech Republic); Ling, C C; Djurisic, A B, E-mail: g.brauer@fzd.de [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

2011-01-10

Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

Type A behavior and the thallium stress test

International Nuclear Information System (INIS)

Kahn, J.P.; Kornfeld, D.S.; Blood, D.K.; Lynn, R.B.; Heller, S.S.; Frank, K.A.

1982-01-01

Several recent studies have examined the association between Type A personality and coronary artery disease (CAD) by coronary angiography. Most of these studies have reported a significant association. The present study is an attempt at further confirmation, using a new non-invasive technique for measuring CAD. Subjects were 53 patients undergoing routine exercise stress tests with concomitant thallium-201 myocardial perfusion studies. Five aspects of Type A behavior were assessed by the use of the Rosenman-Friedman Semistructured Interview, and each was rated on a three-point scale. Severity of CAD was independently estimated on a four-point scale. Pearson correlation coefficients were separately computed for patients with and without reported history of myocardial infarction (MI). For 37 patients without reported MI, CAD severity was significantly correlated with Overall Type A (r . -0.53), Vocal Characteristics (r . -0.53), Job Involvement (r . -0.36) and Aggressiveness (r . -0.48), but not Time Urgency (r . -0.25). For 16 patients with reported MI, CAD severity was significantly correlated with Job Involvement only (r . +0.49). The data are consistent with the association of Type A personality and coronary atherogenesis, but may also reflect Type A psychological and physiological characteristics. Future studies may be able to examine these and other aspects of Type A behavior using this noninvasive technique in more diverse patient populations

Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

1990-01-01

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

2D Hybrid Nanomaterials for Selective Detection of NO2 and SO2 Using "Light On and Off" Strategy.

Science.gov (United States)

Chen, Aimin; Liu, Rui; Peng, Xiao; Chen, Qiaofen; Wu, Jianmin

2017-10-25

In order to distinguish NO 2 and SO 2 gas with one sensor, we designed a paper chip assembled with a 2D g-C 3 N 4 /rGO stacking hybrid fabricated via a layer-by-layer self-assembly approach. The g-C 3 N 4 /rGO hybrid exhibited a remarkable photoelectric property due to the construction of a van der Waals heterostructure. For the first time, we have been able to selectively detect NO 2 and SO 2 gas using a "light on and off" strategy. Under the "light off" condition, the g-C 3 N 4 /rGO sensor exhibited a p-type semiconducting behavior with a low detection limit of 100 ppb of NO 2 , but with no response toward SO 2 . In contrast, the sensor showed n-type semiconducting behavior which could detect SO 2 at concentration as low as 2 ppm under UV light irradiation. The effective electron transfer among the 2D structure of g-C 3 N 4 and rGO nanosheets as well as highly porous structures could play an important role in gas sensing. The different sensing mechanisms at "light on and off" circumstances were also investigated in detail.

Multiresponsive Behavior of Functional Poly(p-phenylene vinylenes in Water

Directory of Open Access Journals (Sweden)

Kanykei Ryskulova

2016-10-01

Full Text Available The multiresponsive behavior of functionalized water-soluble conjugated polymers (CPs is presented with potential applications for sensors. In this study, we investigated the aqueous solubility behavior of water-soluble CPs with high photoluminescence and with a particular focus on their pH and temperature responsiveness. For this purpose, two poly(phenylene vinylenes (PPVs—namely 2,5-substituted PPVs bearing both carboxylic acid and methoxyoligoethylene glycol units—were investigated, with different amount of carboxylic acid units. Changes in the pH and temperature of polymer solutions led to a response in the fluorescence intensity in a pH range from 3 to 10 and for temperatures ranging from 10 to 85 °C. Additionally, it is demonstrated that the polymer with the largest number of carboxylic acid groups displays upper critical solution temperature (UCST-like thermoresponsive behavior in the presence of a divalent ion like Ca2+. The sensing capability of these water-soluble PPVs could be utilized to design smart materials with multiresponsive behavior in biomedicine and soft materials.

Diffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samples

International Nuclear Information System (INIS)

Pan, Hung-Chun; Hsieh, Tsung-Eong

2012-01-01

Highlights: ► Diffusion barrier features, activation energies of IMC growth and mechanical behaviors of electroless Co(W,P)/PbSn joints. ► Amorphous Co(W,P) is a sacrificial- plus stuffed-type barrier while polycrystalline Co(W,P) is a sacrificial-type barrier. ► Ductile mode dominates the failure of Co(W,P)/PbSn joints. ► Phosphorus content of Co(W,P) is crucial to the barrier capability and microstructure evolution at Co(W,P)/PbSn interface. ► Diffusion barrier capability is governed by the nature of chemical bonds, rather than the crystallinity of materials. - Abstract: Diffusion barrier characteristics, activation energy (E a ) of IMC growth and bonding properties of amorphous and polycrystalline electroless Co(W,P) (termed as α-Co(W,P) and poly-Co(W,P)) to eutectic PbSn solder are presented. Intermetallic compound (IMC) spallation and an nano-crystalline P-rich layer were observed in PbSn/α-Co(W,P) samples subjected to liquid-state aging at 250 °C. In contrast, IMCs resided on the P-rich layer in PbSn/α-Co(W,P) samples subjected to solid-state aging at 150 °C. Thick IMCs neighboring to an amorphous W-rich layer was seen in PbSn/poly-Co(W,P) samples regardless of the aging type. α-Co(W,P) was found to be a sacrificial- plus stuffed-type barrier while poly-Co(W,P) is mainly a sacrificial-type barrier. The values of E a 's for PbSn/α-Co(W,P) and PbSn/poly-Co(W,P) systems were 338.6 and 167.5 kJ/mol, respectively. Shear test revealed the ductile mode dominates the failure in both α- and poly-Co(W,P) samples. Analytical results indicated the high P content in electroless layer might enhance the barrier capability but degrade the bonding strength.

Trivial topological phase of CaAgP and the topological nodal-line transition in CaAg (P1 -xA sx)

Science.gov (United States)

Xu, N.; Qian, Y. T.; Wu, Q. S.; Autès, G.; Matt, C. E.; Lv, B. Q.; Yao, M. Y.; Strocov, V. N.; Pomjakushina, E.; Conder, K.; Plumb, N. C.; Radovic, M.; Yazyev, O. V.; Qian, T.; Ding, H.; Mesot, J.; Shi, M.

2018-04-01

By performing angle-resolved photoemission spectroscopy and first-principles calculations, we address the topological phase of CaAgP and investigate the topological phase transition in CaAg (P1 -xA sx) . We reveal that in CaAgP, the bulk band gap and surface states with a large bandwidth are topologically trivial, in agreement with hybrid density functional theory calculations. The calculations also indicate that application of "negative" hydrostatic pressure can transform trivial semiconducting CaAgP into an ideal topological nodal-line semimetal phase. The topological transition can be realized by partial isovalent P/As substitution at x =0.38 .

Elastic behavior of MFI-type zeolites: 3 - Compressibility of silicalite and mutinaite

Energy Technology Data Exchange (ETDEWEB)

Quartieri, Simona, E-mail: squartieri@unime.it [Dipartimento di Scienze della Terra, Universita di Messina, Viale Ferdinando Stagno d' Alcontres 31, 98166 Messina S. Agata (Italy); Arletti, Rossella [Dipartimento di Scienze Mineralogiche e Petrologiche, Via Valperga Caluso 35, 10125 Torino (Italy); Vezzalini, Giovanna [Dipartimento di Scienze della Terra, Universita di Modena e Reggio Emilia, Via S. Eufemia 19, 41100 Modena (Italy); Di Renzo, Francesco [Institut Charles Gerhardt de Montpellier, UMR 5253 CNRS-UM2-ENSCM-UM1, 8 rue Ecole Normale, 34296 Montpellier (France); Dmitriev, Vladimir [Swiss-Norwegian Beam Line at ESRF, BP220, 38043 Grenoble Cedex (France)

2012-07-15

We report the results of an in-situ synchrotron X-ray powder diffraction study - performed using silicone oil as 'non-penetrating' pressure transmitting medium - of the elastic behavior of three zeolites with MFI-type framework: the natural zeolite mutinaite and two silicalites (labeled A and B) synthesized under different conditions. While in mutinaite no symmetry change is observed as a function of pressure, a phase transition from monoclinic (P2{sub 1}/n) to orthorhombic (Pnma) symmetry occurs at about 1.0 GPa in the silicalite samples. This phase transition is irreversible upon decompression. The second order bulk moduli of silicalite A and silicalite B, calculated after the fulfillment of the phase transition, are: K{sub 0}=18.2(2) and K{sub 0}=14.3 (2) GPa, respectively. These values makes silicalite the most compressible zeolite among those up to now studied in silicone oil. The structural deformations induced by HP in silicalite A were investigated by means of complete Rietveld structural refinements, before and after the phase transition, at P{sub amb} and 0.9 GPa, respectively. The elastic behaviors of the three MFI-type zeolites here investigated were compared with those of Na-ZSM-5 and H-ZSM-5, studied in similar experimental conditions: the two silicalites - which are the phases with the highest Si/Al ratios and hence the lowest extraframework contents - show the highest compressibility. On the contrary, the most rigid material is mutinaite, which has a very complex extraframework composition characterized by a high number of cations and water molecules. - Graphical abstract: High-pressure behavior of silicalite compressed in silicone oil: projection of the structure along the [0 1 0] direction at Pamb(a), 0.9 GPa (b). (c) Comparison of the unit-cell volume variations as a function of pressure for mutinaite, H-ZSM5, Na-ZSM5, silicalite A, and silicalite B compressed in silicone oil. Highlights: Black-Right-Pointing-Pointer X-ray powder

A Molecular-Scale Understanding of Cohesion and Fracture in P3HT:Fullerene Blends

KAUST Repository

Tummala, Naga Rajesh; Bruner, Christopher; Risko, Chad; Bredas, Jean-Luc; Dauskardt, Reinhold H.

2015-01-01

mechanical flexibility, reliability, and lifetime. Here, the molecular mechanism for the initiation of cohesive failure in bulk heterojunction (BHJ) OPV active layers derived from the semiconducting polymer poly-(3-hexylthiophene) [P3HT] and two mono

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

KAUST Repository

Hota, M. K.

2014-04-14

We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

Regulation of the Type III InsP3 Receptor by InsP3 and ATP

OpenAIRE

Hagar, Robert E.; Ehrlich, Barbara E.

2000-01-01

Many hormones and neurotransmitters raise intracellular calcium (Ca(2+)) by generating InsP(3) and activating the inositol 1,4, 5-trisphosphate receptor (InsP(3)R). Multiple isoforms with distinct InsP(3) binding properties () have been identified (). The type III InsP(3)R lacks Ca(2+)-dependent inhibition, a property that makes it ideal for signal initiation (). Regulation of the type III InsP(3)R by InsP(3) and ATP was explored in detail using planar lipid bilayers. In comparison to the typ...

Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

KAUST Repository

Nam, Sungho; Han, Hyemi; Seo, Jooyeok; Song, Myeonghun; Kim, Hwajeong; Anthopoulos, Thomas D.; McCulloch, Iain; Bradley, Donal D C; Kim, Youngkyoo

2016-01-01

Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

KAUST Repository

Nam, Sungho

2016-11-18

Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

Behavioral interventions for adolescents with type 1 diabetes

DEFF Research Database (Denmark)

Hampson, S. E.; Skinner, T. C.; Hart, J.

2000-01-01

OBJECTIVE - To evaluate the effectiveness of behavioral interventions for adolescents with type 1 diabetes based on a systematic review of the literature. RESEARCH DESIGN AND METHODS - The literature was identified by searching 11 electronic databases, hand-searching 3 journals from their start...... dates, and contacting individual researchers. Only articles that reported evaluations of behavioral (including educational and psychosocial) interventions for adolescents (age range 9-21 years) with type 1 diabetes that included a control group were included in the present review. Data summarizing...... were RCTs. Effect sizes could be calculated for 18 interventions. The overall mean effect size calculated across all outcomes was 0.33 (median 0.21), indicating that these interventions have a small- to medium-sized beneficial effect on diabetes management. Interventions that were theoretically based...

Adolescents' use of care for behavioral and emotional problems: Types, trends, and determinants

NARCIS (Netherlands)

S.A. Reijneveld (Sijmen); P.A. Wiegersma (Auke); J. Ormel (Johan); F.C. Verhulst (Frank); W.A.M. Vollebergh (Wilma); D.E.M.C. Jansen (Daniëlle)

2014-01-01

textabstractObjective: While adolescents use various types of care for behavioral and emotional problems, evidence on age trends and determinants per type is scarce. We aimed to assess use of care by adolescents because of behavioral and emotional problems, overall and by type, and its determinants,

Adolescents' Use of Care for Behavioral and Emotional Problems : Types, Trends, and Determinants

NARCIS (Netherlands)

Reijneveld, Sijmen A.; Wiegersma, P. Auke; Ormel, Johan; Verhulst, Frank C.; Vollebergh, Wilma A. M.; Jansen, Danielle E. M. C.

2014-01-01

Objective: While adolescents use various types of care for behavioral and emotional problems, evidence on age trends and determinants per type is scarce. We aimed to assess use of care by adolescents because of behavioral and emotional problems, overall and by type, and its determinants, for ages

Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

Science.gov (United States)

Prasad, K. Shyam; Rao, Ashok; Chauhan, Nagendra S.; Bhardwaj, Ruchi; Vishwakarma, Avinash; Tyagi, Kriti

2018-02-01

In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1- x Sb x Se3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group -4/3m. The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution ( κ e) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

Properties and local environment of p-type and photoluminescent rare earths implanted into ZnO single crystals

CERN Document Server

Rita, EMC; Wahl, U; Soares, JC

This thesis presents an experimental study of the local environment of p-type and Rare- Earth dopants implanted in ZnO single-crystals (SCs). Various nuclear and bulk property techniques were combined in the following evaluations: Implantation damage annealing was evaluated in ZnO SCs implanted with Fe, Sr and Ca. P-type dopants Cu and Ag implanted ZnO SCs were studied revealing that the solubility of Cu in substituting Zn is considerably higher than that of Ag. These results are discussed within the scope of the ZnO p-type doping problematic with these elements. Experimental proofs of the As “anti-site” behavior in ZnO were for the first time attained, i.e., the majority of As atoms are substitutional at the Zn site (SZn), possibly surrounded by two Zn vacancies (VZn). This reinforces the theoretical prediction that As acts as an acceptor in ZnO via the AsZn-2VZn complex formation. The co-doping of ZnO SC with In (donor) and As (acceptor) was addressed. The most striking result is the possible In-As “p...

New Role of P/Q-type Voltage-gated Calcium Channels

DEFF Research Database (Denmark)

Hansen, Pernille B L

2015-01-01

Voltage-gated calcium channels are important for the depolarization-evoked contraction of vascular smooth muscle cells (SMCs), with L-type channels being the classical channel involved in this mechanism. However, it has been demonstrated that the CaV2.1 subunit, which encodes a neuronal isoform...... of the voltage-gated calcium channels (P/Q-type), is also expressed and contributes functionally to contraction of renal blood vessels in both mice and humans. Furthermore, preglomerular vascular SMCs and aortic SMCs coexpress L-, P-, and Q-type calcium channels within the same cell. Calcium channel blockers...... are widely used as pharmacological treatments. However, calcium channel antagonists vary in their selectivity for the various calcium channel subtypes, and the functional contribution from P/Q-type channels as compared with L-type should be considered. Confirming the presence of P/Q-type voltage...

Modified social learning theory re-examined: correlates of self-management behaviors of persons with Type 2 diabetes.

Science.gov (United States)

Nugent, Linda E; Wallston, Kenneth A

2016-12-01

Modified social learning theory (MSLT) applied to health predicts that health behavior is a multiplicative function of health value and perceptions of control over health. The self-management behaviors of persons with Type 2 diabetes mellitus, internal diabetes locus of control (IDLC), diabetes self-efficacy (DSE), and health value (HV) were assessed with an index of diabetes self-care activities in 107 patients receiving insulin. Multiple regression analysis showed DSE as the only MSLT construct that correlated with the index of diabetes self-care behaviors (β = .21, p < .05). While the predicted three-way interaction of IDLC × DSE × HV was significant (∆R 2  = 4.5 %, p < .05) in the final step of the hierarchical model, the pattern of the findings only partially supported MSLT. Instead of finding that patients who were simultaneously high on all three predictors scored highest on the behavioral index, we found that patients who were low on all three constructs reported the least amount of diabetes self-care behavior. Implications for further modification of MSLT and its applications to clinical practice are discussed.

Role of Molecular Weight Distribution on Charge Transport in Semiconducting Polymers

KAUST Repository

Himmelberger, Scott

2014-10-28

© 2014 American Chemical Society. Model semiconducting polymer blends of well-controlled molecular weight distributions are fabricated and demonstrated to be a simple method to control intermolecular disorder without affecting intramolecular order or degree of aggregation. Mobility measurements exhibit that even small amounts of low molecular weight material are detrimental to charge transport. Trends in charge carrier mobility can be reproduced by a simple analytical model which indicates that carriers have no preference for high or low molecular weight chains and that charge transport is limited by interchain hopping. These results quantify the role of long polymer tie-chains and demonstrate the need for controlled polydispersity for achieving high carrier mobilities.

[Cognitive behavioral therapy for tension-type headache: a case report].

Science.gov (United States)

Salman, İsmail Barış; Sertel Berk, Hanife Özlem

2017-10-01

Tension-type headache has a very high socioeconomic impact, and its lifetime prevalence is reported to be between 30% and 78% in different studies. It is widely acknowledged that noninvasive management with a multidisciplinary approach should be considered for the treatment of tension-type headache. Cognitive behavioral therapy and relaxation exercises are efficient techniques. This article illustrates the application of a cognitive behavioral therapy protocol enhanced with progressive muscle stretching and relaxation exercises in the treatment of chronic tension-type headache via a case report. Our patient had an ongoing headache for 6 years when he was referred to us by the department of psychiatry. After 10 cognitive behavioral therapy sessions, the patient had learned to notice muscle tension and relax the muscles as well as to recognize and express his emotions in a better way. He became aware of automatic thoughts and learned to find alternative thoughts. Headache severity decreased, and he was able to increase participation in daily life activities.

p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

Science.gov (United States)

Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

2014-04-23

In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.

High-performance thin-film-transistors based on semiconducting-enriched single-walled carbon nanotubes processed by electrical-breakdown strategy

Energy Technology Data Exchange (ETDEWEB)

Aïssa, B., E-mail: aissab@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1" è" r" e Avenue, Val d’Or, Québec J9P 1Y3 (Canada); Habib, M.A. [Computer Sciences and Engineering Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Abdul-Hafidh, E.H. [High Energy Physics Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Rosei, F. [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

2015-02-15

Highlights: • We selectively burn metallic single wall carbon nanotubes (SWCNT) by electrical breakdown. • We successfully achieve a semiconducting enriched-SWCNT in TFT configuration. • High performance, like On/Off of 10{sup 5} and a subthreshold swing of 165 mV/decades were obtained. • After PMMA coating, the SWCNT–TFTs were found stables for more than 4 months. - Abstract: Over the past two decades, among remarkable variety of nanomaterials, single-walled carbon nanotubes (SWCNTs) remain the most intriguing and uniquely well suited materials for applications in high-performance electronics. The most advanced technologies require the ability to form purely semiconducting SWCNTs. Here, we report on our strategy based on the well known progressive electrical breakdown process that offer this capability and serves as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous random networks, deposited on silicon substrates in a thin film transistor (TFT) configuration. We demonstrate the successful achievement of semiconducting enriched-SWCNT networks in TFT scheme that reach On/Off switching ratios of ∼100,000, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades. The obtained TFT devices were then protected with thin film poly(methyl methacrylate) (PMMA) to keep the percolation level of the SWCNTs network spatially and temporally stable, while protecting it from atmosphere exchanges. TFT devices were found to be air-stable and maintained their excellent characteristics in ambient atmosphere for more than 4 months. This approach could work as a platform for future nanotube-based nanoelectronics.

Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

KAUST Repository

Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

2009-01-01

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

Effect of the metal work function on the electrical properties of carbon nanotube network transistors

International Nuclear Information System (INIS)

Kim, Un Jeong; Ko, Dae Young; Kil, Joon Pyo; Lee, Jung Wha; Park, Wan Jun

2012-01-01

A nearly perfect semiconducting single-walled carbon nanotube random network thin film transistor array was fabricated, and its reproducible transport properties were investigated. The effects of the metal work function for both the source and the drain on the electrical properties of the transistors were systematically investigated. Three different metal electrodes, Al, Ti, and Pd, were employed. As the metal work function increased, p-type behavior became dominant, and the field effect hole mobility dramatically increased. Also, the Schottky barrier of the Ti-nanotube contact was invariant to the molecular adsorption of species in air.

Photosensitive semiconducting polymer-incorporated nanofibers for promoting the regeneration of skin wound

Energy Technology Data Exchange (ETDEWEB)

Jin, Guorui [Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, 138634 (Singapore); The Key Laboratory of Biomedical Information Engineering of Ministry of Education, Xi' an Jiaotong University, School of Life Science and Technology, Xi' an 710049 (China); Li, Jun [Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, 138634 (Singapore); Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ (United Kingdom); Li, Kai, E-mail: kai_li_cn@hotmail.com [Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, 138634 (Singapore); Department of Radiology and Molecular Imaging Program at Stanford (MIPS), Stanford School of Medicine, Stanford, 94305 (United States)

2017-01-01

Photosensitive semiconducting polymer (SP) combined with light stimulation has shown the capability in promoting the proliferation of human dermal fibroblasts (HDFs). However, the high cytotoxicity of the used SP hindered its further application in bioactive scaffolds. In this contribution, we designed and synthesized a SP, poly (N,N-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c] pyrrole-1,4-dione-alt-thieno[3,2-b]thiophene) (PDBTT) with low cytotoxicity and strong absorbance in red and near-infrared region (600–1200 nm). The photosensitive SP was then applied in electrospun poly(ε-caprolactone) (PCL) nanofibrous scaffold and evaluated its proliferative effect on HDFs under the illumination from red light-emitting diode (LED) with high tissue penetration. After 9 days of continuous stimulation, the hybrid electrospun PCL/PDBTT nanofibers with low cytotoxicity showed excellent support for HDFs adhesion, proliferation and collagen secretion than neat PCL nanofibers and HDFs on the stimulated PCL/PDBTT nanofibers gained typical spindle morphology, indicating the well cell spreading on the stimulated PCL/PDBTT nanofibers. The incorporation of functional materials within synthetic biomaterials could be a novel way in improving the performance of engineered tissue constructs by providing multiple cues (e.g. electrical stimulation) to the attached cells. - Highlights: • A photosensitive semiconducting polymer (SP) was applied in electrospun nanofibrous scaffold. • The SP-incorporated scaffold could promote cell proliferation upon light stimulation. • The designed photosensitive SP could be applied as functional material with low cost and high durability in skin tissue engineering.

EXECUTIVES' BEHAVIOR TYPES AND PROFESSIONAL OF SECRETARIAT'S ATTITUDE

Directory of Open Access Journals (Sweden)

Rosane Fontanella

2012-05-01

Full Text Available After the technological revolution and globalization, many professions have had an up and, consequently, they were forced to adapt to the new reality. Within this new reality, the profile of the secretarial professional evolved and developed a path of struggles and victories, changing significantly. With the change it also increased the responsibilities and challenges. Playing purely operational functions, the professional of secretarial began to think and act strategically with their executives, engaging in projects and goals and also meeting these goals. This paper shows how professionals can perform secretarial duties and manage its function to assist executives with very different behavioral types. It indicates the position that secretarial professionals need to adopt towards these types of behavior and the use of elements of Emotional Intelligence and Social Intelligence can help creating a friendly atmosphere where everyone can live in harmony.

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

International Nuclear Information System (INIS)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-01-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In 2 O 3 and SnO 2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies. (paper)

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

Science.gov (United States)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-06-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

Effects on enantiomeric drug disposition and open-field behavior after chronic treatment with venlafaxine in the P-glycoprotein knockout mice model.

Science.gov (United States)

Karlsson, Louise; Hiemke, Christoph; Carlsson, Björn; Josefsson, Martin; Ahlner, Johan; Bengtsson, Finn; Schmitt, Ulrich; Kugelberg, Fredrik C

2011-05-01

P-glycoprotein (P-gp) plays an important role in the efflux of drugs from the brain back into the bloodstream and can influence the pharmacokinetics and pharmacodynamics of drug molecules. To our knowledge, no studies have reported pharmacodynamic effects of any antidepressant drug in the P-gp knockout mice model. The aim of this study was to investigate the enantiomeric venlafaxine and metabolite concentrations in serum and brain of abcb1ab⁻/⁻ mice compared to wild-type mice upon chronic dosing, and to assess the effect of venlafaxine treatment on open-field behavior. P-gp knockout and wild-type mice received two daily intraperitoneal injections of venlafaxine (10 mg/kg) over ten consecutive days. Locomotor and rearing activities were assessed on days 7 and 9. After 10 days, drug and metabolite concentrations in brain and serum were determined using an enantioselective LC/MS/MS method. The brain concentrations of venlafaxine and its three demethylated metabolites were two to four times higher in abcb1ab⁻/⁻ mice compared to abcb1ab+/+ mice. The behavioral results indicated an impact on exploration-related behaviors in the open-field as center activity was increased, and rears were decreased by venlafaxine treatment. Our results show that P-gp at the blood-brain barrier plays an important role in limiting brain entry of the enantiomers of venlafaxine and its metabolites after chronic dosing. Taken together, the present pharmacokinetic and pharmacodynamic findings offer the possibility that the expression of P-gp in patients may be a contributing factor for limited treatment response.

Electronic Transport Properties of Carbon-Nanotube Networks: The Effect of Nitrate Doping on Intratube and Intertube Conductances

Science.gov (United States)

Ketolainen, T.; Havu, V.; Jónsson, E. Ö.; Puska, M. J.

2018-03-01

The conductivity of carbon-nanotube (CNT) networks can be improved markedly by doping with nitric acid. In the present work, CNTs and junctions of CNTs functionalized with NO3 molecules are investigated to understand the microscopic mechanism of nitric acid doping. According to our density-functional-theory band-structure calculations, there is charge transfer from the CNT to adsorbed molecules indicating p -type doping. The average doping efficiency of the NO3 molecules is higher if the NO3 molecules form complexes with water molecules. In addition to electron transport along individual CNTs, we also study electron transport between different types (metallic, semiconducting) of CNTs. Reflecting the differences in the electronic structures of semiconducting and metallic CNTs, we find that in addition to turning semiconducting CNTs metallic, doping further increases electron transport most efficiently along semiconducting CNTs as well as through the junctions between them.

Recent Developments in p-Type Oxide Semiconductor Materials and Devices

KAUST Repository

Wang, Zhenwei

2016-02-16

The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

Recent Developments in p-Type Oxide Semiconductor Materials and Devices

KAUST Repository

Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

2016-01-01

The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

Transient behavior of interface state continuum at InP insulator-semiconductor interface

International Nuclear Information System (INIS)

Hasegawa, H.; Masuda, H.; He, L.; Luo, J.K.; Sawada, T.; Ohno, H.

1987-01-01

To clarify the drain current drift mechanism in InP MISFETs, an isothermal capacitance transient spectroscopy (ICTS) study of the interface state continuum is made on the anodic Al 2 O 3 /native oxide/ InP MIS system. Capture behavior is temperature-independent, non-exponential and extremely slow, whereas emission behavior is temperature- and bias- dependent, and is much faster. The observed behavior is explained quantitatively by the disorder induced gap state (DIGS) model, where states are distributed both in energy and in space. By comparing the transient behavior of interface states with the observed drift behavior of MISFETs, it is concluded that the electron capture by the DIGS continuum is responsible for the drain current drift of MISFETs. This led to a complete computer simulation of the observed current drift behavior

On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs) : Toward Robust and Scale Invariant SWNTs Transistors

NARCIS (Netherlands)

Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A.

2017-01-01

In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw

S-TYPE AND P-TYPE HABITABILITY IN STELLAR BINARY SYSTEMS: A COMPREHENSIVE APPROACH. II. ELLIPTICAL ORBITS

International Nuclear Information System (INIS)

Cuntz, M.

2015-01-01

In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ( r adiative habitable zone ; RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington

S-TYPE AND P-TYPE HABITABILITY IN STELLAR BINARY SYSTEMS: A COMPREHENSIVE APPROACH. II. ELLIPTICAL ORBITS

Energy Technology Data Exchange (ETDEWEB)

Cuntz, M., E-mail: cuntz@uta.edu [Department of Physics, University of Texas at Arlington, Arlington, TX 76019-0059 (United States)

2015-01-10

In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington.

An information-motivation-behavioral skills analysis of diet and exercise behavior in Puerto Ricans with diabetes.

Science.gov (United States)

Osborn, Chandra Y; Rivet Amico, K; Fisher, William A; Egede, Leonard E; Fisher, Jeffrey D

2010-11-01

Frameworks are needed to inform diabetes self-care programs for diverse populations. We tested the Information-Motivation-Behavioral Skills (IMB) model in a sample of Puerto Ricans with Type 2 diabetes (N = 118). Structural equation models evaluated model fit and interrelations between IMB constructs. For diet behavior, information and motivation related to behavioral skills ( r = 0.19, p motivation related to behavioral skills (r = 0.53, p < .001), and behavioral skills related to behavior (r = 0.45, p < .001). The IMB model could inform interventions targeting these behaviors in diabetes.

Elastic behavior of MFI-type zeolites: 3 – Compressibility of silicalite and mutinaite

International Nuclear Information System (INIS)

Quartieri, Simona; Arletti, Rossella; Vezzalini, Giovanna; Di Renzo, Francesco; Dmitriev, Vladimir

2012-01-01

We report the results of an in-situ synchrotron X-ray powder diffraction study – performed using silicone oil as “non-penetrating” pressure transmitting medium – of the elastic behavior of three zeolites with MFI-type framework: the natural zeolite mutinaite and two silicalites (labeled A and B) synthesized under different conditions. While in mutinaite no symmetry change is observed as a function of pressure, a phase transition from monoclinic (P2 1 /n) to orthorhombic (Pnma) symmetry occurs at about 1.0 GPa in the silicalite samples. This phase transition is irreversible upon decompression. The second order bulk moduli of silicalite A and silicalite B, calculated after the fulfillment of the phase transition, are: K 0 =18.2(2) and K 0 =14.3 (2) GPa, respectively. These values makes silicalite the most compressible zeolite among those up to now studied in silicone oil. The structural deformations induced by HP in silicalite A were investigated by means of complete Rietveld structural refinements, before and after the phase transition, at P amb and 0.9 GPa, respectively. The elastic behaviors of the three MFI-type zeolites here investigated were compared with those of Na-ZSM-5 and H-ZSM-5, studied in similar experimental conditions: the two silicalites – which are the phases with the highest Si/Al ratios and hence the lowest extraframework contents – show the highest compressibility. On the contrary, the most rigid material is mutinaite, which has a very complex extraframework composition characterized by a high number of cations and water molecules. - Graphical abstract: High-pressure behavior of silicalite compressed in silicone oil: projection of the structure along the [0 1 0] direction at Pamb(a), 0.9 GPa (b). (c) Comparison of the unit-cell volume variations as a function of pressure for mutinaite, H-ZSM5, Na-ZSM5, silicalite A, and silicalite B compressed in silicone oil. Highlights: ► X-ray powder diffraction study of silicalite and mutinaite

CANDU type fuel behavior evaluation - a probabilistic approach

International Nuclear Information System (INIS)

Moscalu, D.R.; Horhoianu, G.; Popescu, I.A.; Olteanu, G.

1995-01-01

In order to realistically assess the behavior of the fuel elements during in-reactor operation, probabilistic methods have recently been introduced in the analysis of fuel performance. The present paper summarizes the achievements in this field at the Institute for Nuclear Research (INR), pointing out some advantages of the utilized method in the evaluation of CANDU type fuel behavior in steady state conditions. The Response Surface Method (RSM) has been selected for the investigation of the effects of the variability in fuel element computer code inputs on the code outputs (fuel element performance parameters). A new developed version of the probabilistic code APMESRA based on RSM is briefly presented. The examples of application include the analysis of the results of an in-reactor fuel element experiment and the investigation of the calculated performance parameter distribution for a new CANDU type extended burnup fuel element design. (author)

An analysis of fat-related and fiber-related behavior in men and women with type 2 diabetes mellitus: key findings for clinical practice

Directory of Open Access Journals (Sweden)

Hendrychova T

2013-09-01

Full Text Available Tereza Hendrychova,1 Magda Vytrisalova,1 Jiri Vlcek,1 Alena Smahelova,2 Ales Antonin Kubena1 1Department of Social and Clinical Pharmacy, Faculty of Pharmacy in Hradec Kralove, Charles University in Prague, Czech Republic; 2Diabetology Centre, Department of Gerontology and Metabolism, University Hospital and Faculty of Medicine in Hradec Kralove, Charles University in Prague, Czech Republic Background: Despite the efforts of health care providers, adherence of patients with type 2 diabetes to the recommended diet is poor. The aim of this study was to describe the eating habits with emphasis on fat and fiber-related behavior (FFB as well as the relationship between FFB behavior and parameters of diabetes control in men and women with type 2 diabetes mellitus. Methods: The subjects in this observational cross-sectional study were 200 patients (54.5% male, mean age 66.2 ± 10.1 years, mean Diabetes Control and Complications Trial [DDCT] glycosylated hemoglobin [HbA1c] 7.6% ± 1.7% recruited from diabetes outpatient clinics in the Czech Republic. The subjects filled out the Fat- and Fiber-related Diet Behavior Questionnaire. The most recent patient data on diabetes control and drug therapy were derived from patient medical records. Results: Patients tend to modify the dishes they are used to, rather than remove them completely from their diet and replace them by other types of foods. It is easier to perform healthier fat-related behaviors than fiber-related ones. Women scored significantly better than men on the fat-related diet habits summary scale (P = 0.002, as well as on "modify meat" (P = 0.001 and "substitute specially manufactured low-fat foods" (P = 0.045 subscales. A better score on the fat-related diet habits summary scale was significantly associated with higher HbA1c (ρ = -0.248; P = 0.027 and higher waist circumference (ρ = -0.254; P = 0.024 in women. Conclusion: Type 2 diabetes patients are likely to vary in their FFB behavior, and

Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

Energy Technology Data Exchange (ETDEWEB)

Zhuang, Shendong; Tang, Nujiang; Chen, Zhuo, E-mail: zchen@nju.edu.cn [School of Physics, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, No. 22 Hankou Road, Nanjing, Jiangsu, 210093 (China); Chen, Yan; Xia, Yidong [Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, No. 22 Hankou Road, Nanjing University, Nanjing, Jiangsu, 210093 (China); Xu, Xiaoyong; Hu, Jingguo, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, No. 180 Siwangting Road, Yangzhou, Jiangsu, 225002 (China)

2016-04-15

Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

International Nuclear Information System (INIS)

Zhuang, Shendong; Tang, Nujiang; Chen, Zhuo; Chen, Yan; Xia, Yidong; Xu, Xiaoyong; Hu, Jingguo

2016-01-01

Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

Synthesis and morphological modification of semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films

Energy Technology Data Exchange (ETDEWEB)

Valente, Jaime S., E-mail: jsanchez@imp.mx [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); López-Salinas, Esteban [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); Prince, Julia [Universidad Anáhuac México Norte, Av. Universidad Anáhuac # 46, Huixquilucan, Edo. de México 52786 (Mexico); González, Ignacio; Acevedo-Peña, Prospero [Universidad Autónoma Metropolitana-Iztapalapa, Departamento de Química, Apdo. Postal 55-534, 09340 México D.F. (Mexico); Ángel, Paz del [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico)

2014-09-15

Layered double hydroxide (LDH) thin films with different chemical compositions (MgZnAl, MgZnGa, MgGaAl) and varying thicknesses were easily prepared by sol–gel method followed by dip-coating. Films were chemically uniform, transparent and well adhered to a conductive indium tin oxide (ITO) substrate. Structure, chemical composition and morphology of the thin films were characterized by XRD-GADDS, SEM-EDS and AFM. Additionally, the semiconducting properties of all the prepared films were studied through the Mott–Schottky relationship; such properties were closely related to the chemical compositions of the film. The films were characterized after electrochemical treatment and important modifications regarding surface morphology, particle and crystal sizes were observed. An in-depth study was conducted in order to investigate the effect of several different electrochemical treatments on the morphology, particle size distribution and crystal size of LDH thin films. Upon electrochemical treatment, the films' surface became smooth and the particles forming the films were transformed from flaky open LDH platelets to uniformly distributed close-packed LDH nanoparticles. - Highlights: • Semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films prepared by sol–gel. • LDH thin films show a turbostratic morphology made up of porous flakes. • Electrochemical treatments change the flaky structure into a nanoparticle array.

Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Xiaole [Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Chen, Xianfeng [The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L., E-mail: clgao@sjtu.edu.cn; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China); Luo, Weidong, E-mail: wdluo@sjtu.edu.cn [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)

2016-02-08

Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations.

Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Zhang, K. F.; Yang, Fang; Song, Y. R.; Zhang, Xiaole; Chen, Xianfeng; Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng; Luo, Weidong

2016-01-01

Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations

Age- and cohort-related variance of type-A behavior over 24 years: the Young Finns Study.

Science.gov (United States)

Hintsa, Taina; Jokela, Markus; Pulkki-Råback, Laura; Keltikangas-Järvinen, Liisa

2014-12-01

Over the recent decades, the incidence of cardiovascular and heart diseases has decreased while levels of type-A behavior, i.e., a potential risk factor, appear to have increased. However, the long-term developmental patterns of type-A behavior is poorly understood. Both age- and cohort-related changes may be involved in these developments. The purpose of this study was to examine an age- and cohort-related changes of Hunter-Wolf type-A behavior from adolescence to adulthood. Type-A behavior and its components (aggressiveness, leadership, hard driving, and eagerness energy) were assessed using the Hunter-Wolf A-B rating scale at five time points (1983, 1986, 1989, 2001, and 2007) in a population-based sample consisting of six birth cohorts born between 1962 and 1977 (n = 3,341, a total of 10,506 person observations). Development of type-A behavior and its components was examined with cohort-sequential multilevel modeling. Aggressiveness decreased with age, eagerness energy, hard driving, and global type-A behavior increased, and leadership exhibited no mean level changes. Younger cohorts had higher aggressiveness, lower hard driving, and global type-A behavior. The findings suggest that in order to understand the health consequences of type-A behavior, both life span and societal changes should be considered.

Resonance Raman spectra of organic molecules absorbed on inorganic semiconducting surfaces: Contribution from both localized intramolecular excitation and intermolecular charge transfer excitation

International Nuclear Information System (INIS)

Ye, ChuanXiang; Zhao, Yi; Liang, WanZhen

2015-01-01

The time-dependent correlation function approach for the calculations of absorption and resonance Raman spectra (RRS) of organic molecules absorbed on semiconductor surfaces [Y. Zhao and W. Z. Liang, J. Chem. Phys. 135, 044108 (2011)] is extended to include the contribution of the intermolecular charge transfer (CT) excitation from the absorbers to the semiconducting nanoparticles. The results demonstrate that the bidirectionally interfacial CT significantly modifies the spectral line shapes. Although the intermolecular CT excitation makes the absorption spectra red shift slightly, it essentially changes the relative intensities of mode-specific RRS and causes the oscillation behavior of surface enhanced Raman spectra with respect to interfacial electronic couplings. Furthermore, the constructive and destructive interferences of RRS from the localized molecular excitation and CT excitation are observed with respect to the electronic coupling and the bottom position of conductor band. The interferences are determined by both excitation pathways and bidirectionally interfacial CT

Crystal structures and some physical properties of perovskite type vanadites of lanthanide-series elements

Energy Technology Data Exchange (ETDEWEB)

Shinike, T [Osaka Dental Coll., Hirakata (Japan); Adachi, G; Shiokawa, J

1980-04-01

Crystal structures and some physical properties of the perovskite type vanadites of the lanthanide-series elements were studied. LaVO/sub 3/ and CeVO/sub 3/ had a tetragonal unit cell and other compounds studied were isostructural with orthorhombic GdFeO/sub 3/. The conductivity of all compounds showed semiconductive behavior with an activation energy about 0.1 eV. Electrical conductivity at room temperature decreased along the series from LaVO/sub 3/ to GdVO/sub 3/, and quasiconstant values were observed from TbVO/sub 3/ to LuVO/sub 3/. All the compounds studied, with the exception of LaVO/sub 3/, SmVO/sub 3/ and GdVO/sub 3/, were antiferromagnets with a weak ferromagnetism because of antisymmetric exchange interaction at low temperatures. At high temperature, all the compounds showed paragnetism.

Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

Energy Technology Data Exchange (ETDEWEB)

Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

2006-09-21

Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

Electroluminescence of colloidal quasi-two-dimensional semiconducting CdSe nanostructures in a hybrid light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Selyukov, A. S., E-mail: vslebedev.mobile@gmail.com; Vitukhnovskii, A. G.; Lebedev, V. S.; Vashchenko, A. A. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Vasiliev, R. B.; Sokolikova, M. S. [Moscow State University (Russian Federation)

2015-04-15

We report on the results of studying quasi-two-dimensional nanostructures synthesized here in the form of semiconducting CdSe nanoplatelets with a characteristic longitudinal size of 20–70 nm and a thick-ness of a few atomic layers. Their morphology is studied using TEM and AFM and X-ray diffraction analysis; the crystal structure and sizes are determined. At room and cryogenic temperatures, the spectra and kinetics of the photoluminescence of such structures (quantum wells) are investigated. A hybrid light-emitting diode operating on the basis of CdSe nanoplatelets as a plane active element (emitter) is developed using the organic materials TAZ and TPD to form electron and hole transport layers, respectively. The spectral and current-voltage characteristics of the constructed device with a radiation wavelength λ = 515 nm are obtained. The device triggering voltage is 5.5 V (visible glow). The use of quasi-two-dimensional structures of this type is promising for hybrid light-emitting diodes with pure color and low operating voltages.

Electroluminescence of colloidal quasi-two-dimensional semiconducting CdSe nanostructures in a hybrid light-emitting diode

International Nuclear Information System (INIS)

Selyukov, A. S.; Vitukhnovskii, A. G.; Lebedev, V. S.; Vashchenko, A. A.; Vasiliev, R. B.; Sokolikova, M. S.

2015-01-01

We report on the results of studying quasi-two-dimensional nanostructures synthesized here in the form of semiconducting CdSe nanoplatelets with a characteristic longitudinal size of 20–70 nm and a thick-ness of a few atomic layers. Their morphology is studied using TEM and AFM and X-ray diffraction analysis; the crystal structure and sizes are determined. At room and cryogenic temperatures, the spectra and kinetics of the photoluminescence of such structures (quantum wells) are investigated. A hybrid light-emitting diode operating on the basis of CdSe nanoplatelets as a plane active element (emitter) is developed using the organic materials TAZ and TPD to form electron and hole transport layers, respectively. The spectral and current-voltage characteristics of the constructed device with a radiation wavelength λ = 515 nm are obtained. The device triggering voltage is 5.5 V (visible glow). The use of quasi-two-dimensional structures of this type is promising for hybrid light-emitting diodes with pure color and low operating voltages

All-phosphorus flexible devices with non-collinear electrodes: a first principles study.

Science.gov (United States)

Li, Junjun; Ruan, Lufeng; Wu, Zewen; Zhang, Guiling; Wang, Yin

2018-03-07

With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.

Critical behavior of the Lyapunov exponent in type-III intermittency

Energy Technology Data Exchange (ETDEWEB)

Alvarez-Llamoza, O. [Departamento de Fisica, FACYT, Universidad de Carabobo, Valencia (Venezuela); Centro de Fisica Fundamental, Grupo de Caos y Sistemas Complejos, Universidad de Los Andes, Merida 5251, Merida (Venezuela)], E-mail: llamoza@ula.ve; Cosenza, M.G. [Centro de Fisica Fundamental, Grupo de Caos y Sistemas Complejos, Universidad de Los Andes, Merida 5251, Merida (Venezuela); Ponce, G.A. [Departamento de Fisica, Universidad Nacional Autonoma de Honduras (Honduras); Departamento de Ciencias Naturales, Universidad Pedagogica Nacional Francisco Morazan, Tegucigalpa (Honduras)

2008-04-15

The critical behavior of the Lyapunov exponent near the transition to robust chaos via type-III intermittency is determined for a family of one-dimensional singular maps. Critical boundaries separating the region of robust chaos from the region where stable fixed points exist are calculated on the parameter space of the system. A critical exponent {beta} expressing the scaling of the Lyapunov exponent is calculated along the critical curve corresponding to the type-III intermittent transition to chaos. It is found that {beta} varies on the interval 0 {<=} {beta} < 1/2 as a function of the order of the singularity of the map. This contrasts with earlier predictions for the scaling behavior of the Lyapunov exponent in type-III intermittency. The variation of the critical exponent {beta} implies a continuous change in the nature of the transition to chaos via type-III intermittency, from a second-order, continuous transition to a first-order, discontinuous transition.

Critical behavior of the Lyapunov exponent in type-III intermittency

International Nuclear Information System (INIS)

Alvarez-Llamoza, O.; Cosenza, M.G.; Ponce, G.A.

2008-01-01

The critical behavior of the Lyapunov exponent near the transition to robust chaos via type-III intermittency is determined for a family of one-dimensional singular maps. Critical boundaries separating the region of robust chaos from the region where stable fixed points exist are calculated on the parameter space of the system. A critical exponent β expressing the scaling of the Lyapunov exponent is calculated along the critical curve corresponding to the type-III intermittent transition to chaos. It is found that β varies on the interval 0 ≤ β < 1/2 as a function of the order of the singularity of the map. This contrasts with earlier predictions for the scaling behavior of the Lyapunov exponent in type-III intermittency. The variation of the critical exponent β implies a continuous change in the nature of the transition to chaos via type-III intermittency, from a second-order, continuous transition to a first-order, discontinuous transition

Medial septal GABAergic projection neurons promote object exploration behavior and type 2 theta rhythm

Science.gov (United States)

Gangadharan, Gireesh; Shin, Jonghan; Kim, Seong-Wook; Kim, Angela; Paydar, Afshin; Kim, Duk-Soo; Miyazaki, Taisuke; Watanabe, Masahiko; Yanagawa, Yuchio; Kim, Jinhyun; Kim, Yeon-Soo; Kim, Daesoo; Shin, Hee-Sup

2016-01-01

Exploratory drive is one of the most fundamental emotions, of all organisms, that are evoked by novelty stimulation. Exploratory behavior plays a fundamental role in motivation, learning, and well-being of organisms. Diverse exploratory behaviors have been described, although their heterogeneity is not certain because of the lack of solid experimental evidence for their distinction. Here we present results demonstrating that different neural mechanisms underlie different exploratory behaviors. Localized Cav3.1 knockdown in the medial septum (MS) selectively enhanced object exploration, whereas the null mutant (KO) mice showed enhanced-object exploration as well as open-field exploration. In MS knockdown mice, only type 2 hippocampal theta rhythm was enhanced, whereas both type 1 and type 2 theta rhythm were enhanced in KO mice. This selective effect was accompanied by markedly increased excitability of septo-hippocampal GABAergic projection neurons in the MS lacking T-type Ca2+ channels. Furthermore, optogenetic activation of the septo-hippocampal GABAergic pathway in WT mice also selectively enhanced object exploration behavior and type 2 theta rhythm, whereas inhibition of the same pathway decreased the behavior and the rhythm. These findings define object exploration distinguished from open-field exploration and reveal a critical role of T-type Ca2+ channels in the medial septal GABAergic projection neurons in this behavior. PMID:27208094

Mindfulness and eating behavior in adolescent girls at risk for type 2 diabetes.

Science.gov (United States)

Pivarunas, Bernadette; Kelly, Nichole R; Pickworth, Courtney K; Cassidy, Omni; Radin, Rachel M; Shank, Lisa M; Vannucci, Anna; Courville, Amber B; Chen, Kong Y; Tanofsky-Kraff, Marian; Yanovski, Jack A; Shomaker, Lauren B

2015-09-01

The purpose of this investigation was to examine the relationship of dispositional mindfulness to binge eating and associated eating attitudes and behaviors among adolescent girls at risk for type 2 diabetes (T2D). Participants were 114 overweight or obese adolescents enrolled in a study of girls with a family history of T2D and mild depressive symptoms. Adolescent self-reports of mindfulness, eating in the absence of hunger, and depressive symptoms were collected. An interview was administered to determine presence of binge eating episodes and a behavioral task was used to assess the reinforcing value of food relative to other nonsnack food rewards. Body composition was assessed using dual-energy X-ray absorptiometry. In analyses accounting for race, percent body fat, lean mass, height, age, and depressive symptoms, dispositional mindfulness was associated with a lower odds of binge eating (p = .002). Controlling for the same potential confounds, mindfulness was also inversely associated with eating concern, eating in the absence of hunger in response to fatigue/boredom, and higher food reinforcement relative to physical activity (all p mindfulness are related to binge eating and associated attitudes and behaviors that may confer risk for obesity and metabolic problems. Further research is needed to determine the extent to which mindfulness plays a role in the etiology and/or maintenance of disinhibited eating in adolescents at risk for T2D. © 2015 Wiley Periodicals, Inc.

Formation of p-type ZnO thin film through co-implantation

Science.gov (United States)

Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

2017-01-01

We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

Hierarchical heterostructures of p-type bismuth oxychloride nanosheets on n-type zinc ferrite electrospun nanofibers with enhanced visible-light photocatalytic activities and magnetic separation properties.

Science.gov (United States)

Sun, Yucong; Shao, Changlu; Li, Xinghua; Guo, Xiaohui; Zhou, Xuejiao; Li, Xiaowei; Liu, Yichun

2018-04-15

P-type bismuth oxychloride (p-BiOCl) nanosheets were uniformly grown on n-type zinc ferrite (n-ZnFe 2 O 4 ) electrospun nanofibers via a solvothermal technique to form hierarchical heterostructures of p-BiOCl/n-ZnFe 2 O 4 (p-BiOCl/n-ZnFe 2 O 4 H-Hs). The density and loading amounts of the BiOCl nanosheets with exposed {0 0 1} facets were easily controlled by adjusting the reactant concentration in the solvothermal process. The p-BiOCl/n-ZnFe 2 O 4 H-Hs exhibited enhanced visible-light photocatalytic activities for the degradation of Rhodamine B (RhB). The apparent first-order rate of the p-BiOCl/n-ZnFe 2 O 4 H-Hs and its normalized constant were about 12.6- and 8-fold higher than pure ZnFe 2 O 4 nanofibers. This suggests that both the improved charge separation efficiency from the uniform p-n heterojunctions and the enlarged active surface sites from the hierarchical structures increase the photocatalytic performances. Furthermore, the p-BiOCl/n-ZnFe 2 O 4 H-Hs could be efficiently separated from the solution with an external magnetic field via the ferromagnetic behavior of ZnFe 2 O 4 nanofibers. The magnetic p-BiOCl/n-ZnFe 2 O 4 H-Hs with enhanced visible-light photocatalytic performances might have potential applications in water treatment. Copyright © 2018. Published by Elsevier Inc.

Corrosion Behavior of Detonation Gun Sprayed Fe-Al Type Intermetallic Coating

Science.gov (United States)

Senderowski, Cezary; Chodala, Michal; Bojar, Zbigniew

2015-01-01

The detonation gun sprayed Fe-Al type coatings as an alternative for austenitic valve steel, were investigated using two different methods of testing corrosion resistance. High temperature, 10-hour isothermal oxidation experiments at 550, 750, 950 and 1100 °C show differences in the oxidation behavior of Fe-Al type coatings under air atmosphere. The oxide layer ensures satisfying oxidation resistance, even at 950 and 1100 °C. Hematite, α-Al2O3 and metastable alumina phases were noticed on the coatings top surface, which preserves its initial thickness providing protection to the underlying substrate. In general, only negligible changes of the phase composition of the coatings were noticed with simultaneous strengthening controlled in the micro-hardness measurements, even after 10-hours of heating at 1100 °C. On the other hand, the electrochemical corrosion tests, which were carried out in 200 ppm Cl− (NaCl) and pH ~4 (H2SO4) solution to simulate the acid-rain environment, reveal higher values of the breakdown potential for D-gun sprayed Fe-Al type coatings than the ones for the bulk Fe-Al type alloy and Cr21Mn9Ni4 austenitic valve steel. This enables these materials to be used in structural and multifunctional applications in aggressive environments, including acidic ones. PMID:28787991

Strongly luminescent InP/ZnS core-shell nanoparticles.

Science.gov (United States)

Haubold, S; Haase, M; Kornowski, A; Weller, H

2001-05-18

The wide-bandgap semiconducting material, zinc sulfide, has been coated on indium phosphide nanoclusters to a 1-2-Å thickness. The resulting InP-ZnS core-shell particle (as shown in the TEM image; scale 1 cm=5 nm) exhibits bright luminescence at room temperature with quantum efficiencies as high as 23 %. © 2001 WILEY-VCH Verlag GmbH, Weinheim, Fed. Rep. of Germany.

Nonlinear transport in semiconducting polymers at high carrier densities.

Science.gov (United States)

Yuen, Jonathan D; Menon, Reghu; Coates, Nelson E; Namdas, Ebinazar B; Cho, Shinuk; Hannahs, Scott T; Moses, Daniel; Heeger, Alan J

2009-07-01

Conducting and semiconducting polymers are important materials in the development of printed, flexible, large-area electronics such as flat-panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high-performance field-effect transistors (FETs), beginning with mobilities around 10(-4) cm(2) V(-1) s(-1) to a recent report of 1 cm(2) V(-1) s(-1) for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). Here, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger liquid description of the one-dimensional 'metal'.

Engineering the Kondo state in two-dimensional semiconducting phosphorene

Science.gov (United States)

Babar, Rohit; Kabir, Mukul

2018-01-01

Correlated interaction between dilute localized impurity electrons and the itinerant host conduction electrons in metals gives rise to the conventional many-body Kondo effect below sufficiently low temperature. In sharp contrast to these conventional Kondo systems, we report an intrinsic, robust, and high-temperature Kondo state in two-dimensional semiconducting phosphorene. While absorbed at a thermodynamically stable lattice defect, Cr impurity triggers an electronic phase transition in phosphorene to provide conduction electrons, which strongly interact with the localized moment generated at the Cr site. These manifest into the intrinsic Kondo state, where the impurity moment is quenched in multiple stages and at temperatures in the 40-200 K range. Further, along with a much smaller extension of the Kondo cloud, the predicted Kondo state is shown to be robust under uniaxial strain and layer thickness, which greatly simplifies its future experimental realization. We predict the present study will open up new avenues in Kondo physics and trigger further theoretical and experimental studies.

Photoproduction of I2, Br2, and Cl2 on n-semiconducting powder

Science.gov (United States)

Reichman, B.; Byvik, C. E.

1981-01-01

The photosynthetic production of Br2 and Cl2 and the photocatalytic production of I2 from aqueous solutions of the respective halide ions in the presence of platinized semiconducting n-TiO2 powder are reported. Reactions were produced in 2-3 M oxygen-saturated aqueous solutions of KI, KBr or NaCl containing Pt-TiO2 powder which were irradiated by a high-pressure mercury lamp at a power of 400 mW/sq cm. Halogens are found to be produced in greater quantities when platinized TiO2 powders are used rather than pure TiO2, and rates of halogen production are observed to increase from Cl2 to Br2 to I2. The presence of the synthetic reactions producing Br2 and Cl2 with a net influx of energy indicates that an effective separation of the photoproduced electron-hole pair occurs in the semiconductor. Quantum efficiencies of the reaction, which increase with decreasing solution pH, are found to be as high as 30%, implying a solar-to-chemical energy conversion efficiency between 0.03% and 3% for the case of chlorine production. It is concluded that the photoproduction of halogens may be of practical value if product halogens are efficiently removed from the reaction cell.

Enrichment Mechanism of Semiconducting Single-walled Carbon Nanotubes by Surfactant Amines

Science.gov (United States)

Ju, Sang-Yong; Utz, Marcel; Papadimitrakopoulos, Fotios

2009-01-01

Utilization of single-walled carbon nanotubes (SWNTs) in high-end applications hinges on separating metallic (met-) from semiconducting (sem-) SWNTs. Surfactant amines, like octadecylamine (ODA) have proven instrumental for the selective extraction of sem-SWNTs from tetrahydrofuran (THF) nanotube suspensions. The chemical shift differences along the tail of an asymmetric, diacetylenic surfactant amine were used to probe the molecular dynamics in the presence and absence of nanotubes via NMR. The results suggest that the surfactant amine head is firmly immobilized onto the nanotube surface together with acidic water, while the aliphatic tail progressively gains larger mobility as it gets farther from the SWNT. X-ray and high-resolution TEM studies indicate that the sem-enriched sample is populated mainly by small nanotube bundles containing ca. three SWNTs. Molecular simulations in conjunction with previously determined HNO3/H2SO4 oxidation depths for met- and sem-SWNTs indicate that the strong pinning of the amine surfactants on the sem-enriched SWNTs bundles is a result of a well-ordered arrangement of nitrate/amine salts separated with a monomolecular layer of H2O. Such continuous 2D arrangement of nitrate/amine salts shields the local environment adjacent to sem-enriched SWNTs bundles and maintains an acidic pH that preserves nanotube oxidation (i.e. SWNTn+). This, in turn, results in strong interactions with charge-balancing NO3- counter ions that through their association with neutralized surfactant amines provide effective THF dispersion and consequent sem-enrichment. PMID:19397291

Corrosion behavior of ferritic stainless steel with 15wt% chromium for the automobile exhaust system

Science.gov (United States)

Li, Hua-bing; Jiang, Zhou-hua; Feng, Hao; Zhu, Hong-chun; Sun, Bin-han; Li, Zhen

2013-09-01

The effect of chloride ion concentration, pH value, and grain size on the pitting corrosion resistance of a new ferritic stainless steel with 15wt% Cr was investigated using the anodic polarization method. The semiconducting properties of passive films with different chloride ion concentrations were performed using capacitance measurement and Mott-Schottky analysis methods. The aging precipitation and intergranular corrosion behavior were evaluated at 400-900°C. It is found that the pitting potential decreases when the grain size increases. With the increase in chloride ion concentration, the doping density and the flat-bland potential increase but the thickness of the space charge layer decreases. The pitting corrosion resistance increases rapidly with the decrease in pH value. Precipitants is identified as Nb(C,N) and NbC, rather than Cr-carbide. The intergranular corrosion is attributed to the synergistic effects of Nb(C,N) and NbC precipitates and Cr segregation adjacent to the precipitates.

Adaptive Self-Occlusion Behavior Recognition Based on pLSA

Directory of Open Access Journals (Sweden)

Hong-bin Tu

2013-01-01

Full Text Available Human action recognition is an important area of human action recognition research. Focusing on the problem of self-occlusion in the field of human action recognition, a new adaptive occlusion state behavior recognition approach was presented based on Markov random field and probabilistic Latent Semantic Analysis (pLSA. Firstly, the Markov random field was used to represent the occlusion relationship between human body parts in terms an occlusion state variable by phase space obtained. Then, we proposed a hierarchical area variety model. Finally, we use the topic model of pLSA to recognize the human behavior. Experiments were performed on the KTH, Weizmann, and Humaneva dataset to test and evaluate the proposed method. The compared experiment results showed that what the proposed method can achieve was more effective than the compared methods.

XRD- and infrared-probed anisotropic thermal expansion properties of an organic semiconducting single crystal.

Science.gov (United States)

Mohanraj, J; Capria, E; Benevoli, L; Perucchi, A; Demitri, N; Fraleoni-Morgera, A

2018-01-17

The anisotropic thermal expansion properties of an organic semiconducting single crystal constituted by 4-hydroxycyanobenzene (4HCB) have been probed by XRD in the range 120-300 K. The anisotropic thermal expansion coefficients for the three crystallographic axes and for the crystal volume have been determined. A careful analysis of the crystal structure revealed that the two different H-bonds stemming from the two independent, differently oriented 4HCB molecules composing the unit cell have different rearrangement patterns upon temperature variations, in terms of both bond length and bond angle. Linearly Polarized Mid InfraRed (LP-MIR) measurements carried out in the same temperature range, focused on the O-H bond spectral region, confirm this finding. The same LP-MIR measurements, on the basis of a semi-empirical relation and of geometrical considerations and assumptions, allowed calculation of the -CNH-O- hydrogen bond length along the a and b axes of the crystal. In turn, the so-calculated -CNH-O- bond lengths were used to derive the thermal expansion coefficients along the corresponding crystal axes, as well as the volumetric one, using just the LP-MIR data. Reasonable to good agreement with the same values obtained from XRD measurements was obtained. This proof-of-principle opens interesting perspectives about the possible development of a rapid, low cost and industry-friendly assessment of the thermal expansion properties of organic semiconducting single crystals (OSSCs) involving hydrogen bonds.

Behavioral and histological outcomes following neonatal HI injury in a preterm (P3) and term (P7) rodent model.

Science.gov (United States)

Alexander, M; Garbus, H; Smith, A L; Rosenkrantz, T S; Fitch, R H

2014-02-01

Hypoxia-ischemia (HI) occurs when blood and/or oxygen delivery to the brain is compromised. HI injuries can occur in infants born prematurely (HI populations, brain injury is associated with subsequent behavioral deficits. Neonatal HI injury can be modeled in rodents (e.g., the Rice-Vannucci method, via cautery of right carotid followed by hypoxia). When this injury is induced early in life (between postnatal day (P)1-5), neuropathologies typical of human preterm HI are modeled. When injury is induced later (P7-12), neuropathologies typical of those seen in HI term infants are modeled. The current study sought to characterize the similarities/differences between outcomes following early (P3) and late (P7) HI injury in rats. Male rats with HI injury on P3 or P7, as well as sham controls, were tested on a variety of behavioral tasks in both juvenile and adult periods. Results showed that P7 HI rats displayed deficits on motor learning, rapid auditory processing (RAP), and other learning/memory tasks, as well as a reduction in volume in various neuroanatomical structures. P3 HI animals showed only transient deficits on RAP tasks in the juvenile period (but not in adulthood), yet robust deficits on a visual attention task in adulthood. P3 HI animals did not show any significant reductions in brain volume that we could detect. These data suggest that: (1) behavioral deficits following neonatal HI are task-specific depending on timing of injury; (2) P3 HI rats showed transient deficits on RAP tasks; (3) the more pervasive behavioral deficits seen following P7 HI injury were associated with substantial global tissue loss; and (4) persistent deficits in attention in P3 HI subjects might be linked to neural connectivity disturbances rather than a global loss of brain volume, given that no such pathology was found. These combined findings can be applied to our understanding of differing long-term outcomes following neonatal HI injury in premature versus term infants

Highly crystalline p-PbS thin films with tunable optical and hole transport parameters by chemical bath deposition

International Nuclear Information System (INIS)

Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

2017-01-01

Lead sulfide (PbS) thin films, consisting of well faceted (up to 400 nm) cubic-nanocrystals and possessing significantly improved opto-electronic parameters essential for photovoltaic applications, are grown by utilizing chemical bath deposition (CBD) technique with bath concentrations of 10–200 mM. X-ray diffraction (XRD) and Raman studies confirm the highly crystalline and pure phase of PbS. FESEM and HRTEM studies show that all the films possess uniform and compact (111) oriented nanocubic morphology. Bath concentration change provides tunability of nanocube size from 100 to 400 nm and the direct optical band gap from 1.50 to 0.94 eV. The PbS films exhibit p-type semiconducting behavior with hitherto unreported concurrent highest mobility of 29.3 cm"2V"−"1s"−"1 and high carrier concentration of ∼10"1"8 cm"−"3 with the lowest room temperature resistivity of 0.26 Ω–cm. The 25 mM and 10 mM films show significant surface plasmon absorption in 1200–2400 nm range making them suitable as efficient infrared absorbers in excitonic and multi-junction solar cells.

P-type silicon surface barrier detector used for x-ray dosimetry

International Nuclear Information System (INIS)

Yamamoto, Hisao; Hatakeyama, Satoru; Norimura, Toshiyuki; Tsuchiya, Takehiko

1983-01-01

Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to dosimetry of short-range radiation. The study was also made in the case of N-type surface barrier detector. At room temperature, the short-circuit current increased linearly with exposure dose rate (15 - 50 R/min) for N- and P-type detectors. The open-circuit voltage showed a nonlinear dependence. With increasing temperature, the short-circuit current for the N-type detector was approximately constant up to 30 0 C and then decreased, though the open-circuit voltage decreased linearly. For the P- type detector, both open-circuit voltage and short-circuit current decreased almost linearly with increasing temperature. While a P-type detector is still open to some improvements, these results indicate that it can be used as a dosimeter. (author)

Synthesis of p-type nickel oxide nanosheets on n-type titanium dioxide nanorod arrays for p-n heterojunction-based UV photosensor

Science.gov (United States)

Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

2018-05-01

Titanium dioxide (TiO2) nanorod arrays (TNAs) were synthesized and deposited on fluorine tin oxide (FTO)-coated glass substrate using a novel and facile immersion method in a glass container. The synthesis and deposition of p-type nickel oxide (NiO) nanosheets (NS) on the n-type TNAs was investigated in the p-n heterojunction photodiode (PD) for the application of ultraviolet (UV) photosensor. The fabricated TNAs/NiO NS based UV photosensor exhibited a highly increased photocurrent of 4.3 µA under UV radiation (365 nm, 750 µW/cm2) at 1.0 V reverse bias. In this study, the fabricated TNAs/NiO NS p-n heterojunction based photodiode showed potential applications for UV photosensor based on the stable photo-generated current attained under UV radiation.

W and WSix Ohmic contacts on p- and n-type GaN

International Nuclear Information System (INIS)

Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

1999-01-01

W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

S-type and P-type habitability in stellar binary systems: A comprehensive approach. I. Method and applications

Energy Technology Data Exchange (ETDEWEB)

Cuntz, M., E-mail: cuntz@uta.edu [Department of Physics, University of Texas at Arlington, Arlington, TX 76019-0059 (United States)

2014-01-01

A comprehensive approach is provided for the study of both S-type and P-type habitability in stellar binary systems, which in principle can also be expanded to systems of higher order. P-type orbits occur when the planet orbits both binary components, whereas in the case of S-type orbits, the planet orbits only one of the binary components with the second component considered a perturbator. The selected approach encapsulates a variety of different aspects, which include: (1) the consideration of a joint constraint, including orbital stability and a habitable region for a putative system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ), needs to be met; (2) the treatment of conservative, general, and extended zones of habitability for the various systems as defined for the solar system and beyond; (3) the provision of a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are presented for the kind of system in which S-type and P-type habitability is realized; (4) applications of the attained theoretical approach to standard (theoretical) main-sequence stars. In principle, five different cases of habitability are identified, which are S-type and P-type habitability provided by the full extent of the RHZs; habitability, where the RHZs are truncated by the additional constraint of planetary orbital stability (referred to as ST- and PT-type, respectively); and cases of no habitability at all. Regarding the treatment of planetary orbital stability, we utilize the formulae of Holman and Wiegert as also used in previous studies. In this work, we focus on binary systems in circular orbits. Future applications will also consider binary systems in elliptical orbits and provide thorough comparisons to other methods and results given in the literature.

Relations of Behavioral Autonomy to Health Outcomes Among Emerging Adults With and Without Type 1 Diabetes

Science.gov (United States)

Reynolds, Kerry A.; Becker, Dorothy; Escobar, Oscar; Siminerio, Linda

2014-01-01

Objective To examine the relation of behavioral autonomy to psychological, behavioral, and physical health among emerging adults with and without type 1 diabetes. Methods High school seniors with (n = 118) and without type 1 diabetes (n = 122) completed online questionnaires for three consecutive years. Behavioral autonomy, psychological health, risk behaviors, and diabetes outcomes were assessed. Regression analyses were conducted to predict Time 2 and 3 outcomes, controlling for Time 1 outcomes. Results There were no group differences in behavioral autonomy. Behavioral autonomy predicted better psychological health but only for emerging adults without diabetes. Behavioral autonomy was related to increased risk behavior for both groups. Behavioral autonomy was unrelated to self-care but predicted better glycemic control for females. Conclusions Behavioral autonomy may be beneficial for psychological health, but is related to increased risk behavior. The implications of behavioral autonomy for emerging adults with type 1 diabetes require careful consideration. PMID:25157070

High Efficiency Photovoltaic Devices Fabricated from Self-Assemble Block Insulating-Conducting Copolymer Containing Semiconducting Nanoparticles

Science.gov (United States)

2005-12-14

71.3° TESDT ɝ° 45.3° 59.5° 67.2° 75.0° The amount of D-A linkers anchored on TiO2 nanoparticles was determined by thermogravimetric analysis ...e.g. lamellae, cylinders and spheres of copolymers were fabricated. Semiconducting nanoparticles of cadmium sulfide ( CdS ) was incorporated into PPP...water contact angle measurement, thermogravimetric analysis , and XPS spectra, we can presume that compact SAMs were formed on the surface of TiO2

Dietary Behaviors Among Patients with Type 2 Diabetes Mellitus in YOGYAKARTA, Indonesia

OpenAIRE

Primanda, Yanuar; Kritpracha, Charuwan; Thaniwattananon, Ploenpit

2011-01-01

Purpose: To describe dietary behaviors and examine relationships between selected factors and dietary behaviors among type 2 diabetes mellitus (T2DM) patients in Yogyakarta, Indonesia.Method: Seventy T2DM patients from a hospital in Yogyakarta who met the inclusion criteria were recruited. Patient’s dietary behaviors were measured by the Dietary Behaviors Questionnaire developed for this study with adequate reliability. The questionnaire comprised of four dimensions: recognizing the amo...

Health behaviors of patients diagnosed with type 2 diabetes mellitus and their influence on the patients’ satisfaction with life

Directory of Open Access Journals (Sweden)

Rosiek A

2016-11-01

Full Text Available Anna Rosiek,1 Tomasz Kornatowski,1 Natalia Frąckowiak-Maciejewska,1 Aleksandra Rosiek-Kryszewska,2 Przemysław Wyżgowski,3 Krzysztof Leksowski1,3 1Department of Public Health, Faculty of Health Science, Nicolaus Copernicus University in Toruń, 2Department of Inorganic and Analytical Chemistry, Faculty of Pharmacy, Nicolaus Copernicus University in Toruń, 3Department of General Surgery, 10th Military Hospital, Bydgoszcz, Poland Background: The diagnosis of type 2 diabetes mellitus (T2DM carries with it a number of changes to the patient’s lifestyle. A healthy lifestyle, health and preventive behaviors, as well as healthy nutrition habits play a key role in treating T2DM as well as limiting its complications.Materials and methods: The aim of this study was the analysis of the correlation of T2DM patients’ health behaviors and their influence on the patients’ quality of life. The study was performed on a group of 50 patients from the Kuyavian–Pomeranian Voivodeship. In this study, the Health Behavior Inventory and the Satisfaction with Life Scale were used. The results were statistically analyzed. The study was approved by the ethics committee.Results: The intensity of severity of health behavior and satisfaction with life of T2DM patients depends on the gender of the patient (P<0.05. The analysis of the patients’ behaviors in four categories, proper eating habits (consuming vegetables, fruit, whole meal bread, health practices (daily physical activity, recreation, sleeping habits, preventive behaviors (including keeping to health recommendations, and positive mental attitude, showed substantial correlation of the Health Behavior Inventory and the Satisfaction with Life Scale (P<0.05.Conclusion: The categorization of the prohealth behaviors shown by diabetics allowed us to measure the connection between the individual categories of satisfaction with life. Males with T2DM showed a higher satisfaction with life score than females with

Semiconducting polymer dot as a highly effective contrast agent for photoacoustic imaging

Science.gov (United States)

Yuan, Zhen; Zhang, Jian

2018-02-01

In this study, we developed a novel PIID-DTBT based semiconducting polymer dots (Pdots) that have broad and strong optical absorption in the visible-light region (500 nm - 700 nm). Gold nanoparticles (GNPs) and gold nanorods (GNRs) that have been verified as an excellent photoacoustic contrast agent were compared with Pdots based on photoacoustic imaging method. Both ex vivo and in vivo experiment demonstrated Pdots have a better photoacoustic conversion efficiency at 532 nm than GNPs and similar photoacoustic performance with GNRs at 700 nm at the same mass concentration. Our work demonstrates the great potential of Pdots as a highly effective contrast agent for precise localization of lesions relative to the blood vessels based on photoacoustic tomography imaging.

Dynamic behavior and chaos control in a complex Riccati-type map ...

African Journals Online (AJOL)

This paper is devoted to analyze the dynamic behavior of a Riccati- type map with complex variables and complex parameters. Fixed points and their asymptotic stability are studied. Lyapunov exponent is computed to indicate chaos. Bifurcation and chaos are discussed. Chaotic behavior of the map has been controlled by ...

Coexistence of ferromagnetism and spin glass freezing in the site-disordered kagome ferrite SrSn2Fe4O11

Science.gov (United States)

Shlyk, Larysa; Strobel, S.; Farmer, B.; De Long, L. E.; Niewa, R.

2018-05-01

Single-crystal x-ray diffraction refinements indicate SrSn2Fe4O11 crystallizes in the hexagonal R-type ferrite structure with non-centrosymmetric space group P63mc and lattice parameters a = 5.9541(2) Å, c = 13.5761(5) Å, Z = 2 (R(F) = 0.034). Octahedrally coordinated sites are randomly occupied by Sn and Fe; whereas tetrahedrally coordinated sites are exclusively occupied by Fe, whose displacement from ideal trigonal-bipyramidal coordination causes the loss of inversion symmetry. DC magnetization data indicate SrSn2Fe4O11 single crystals undergo ferro- or ferri-magnetic order below a transition temperature TC = 630 K with very low coercive fields Hc ⊥ = 0.27 Oe and Hc// = 1.5 Oe at 300 K, for applied fields perpendicular and parallel to the c-axis, respectively. The value for TC is exceptionally high, and the coercive fields exceptionally low, among the known R-type ferrites. Enhanced coercivity and thermomagnetic hysteresis suggest the onset of short-range, spin glass order occurs below Tf = 35 K. Optical measurements indicate a band gap of 0.8 eV, consistent with wide-gap semiconducting behavior and a previously established empirical correlation between the semiconducting gap and TC for R-type ferrites based upon Ru.

Psychosocial and Clinical Outcomes of a Cognitive Behavioral Therapy for Asians and Pacific Islanders with Type 2 Diabetes: A Randomized Clinical Trial.

Science.gov (United States)

Inouye, Jillian; Li, Dongmei; Davis, James; Arakaki, Richard

2015-11-01

Asian Americans and Pacific Islanders are twice as likely to be diagnosed with type 2 diabetes compared to Caucasians. The objective was to determine the effect of cognitive behavioral therapy on quality of life, general health perceptions, depressive symptoms, and glycemia in Asians and Pacific Islanders with type 2 diabetes. The design was a randomized controlled clinical trial comparing cognitive behavioral therapy to diabetes education and support for six weekly sessions. Participants were recruited from two endocrinology practices; 207 were enrolled. The cognitive behavioral therapy group was provided self-management tools which included biofeedback, breathing exercises, and stress relievers, while the diabetes education and support group included diabetes education and group discussions. Assessments of psychosocial and clinical outcomes were obtained before and after sessions and 12 months PostSession. Differences between the two groups were examined using linear mixed-effects models with linear contrasts. The cognitive behavioral therapy group had improved depressive symptom scores from PreSession to EndSession compared to the diabetes education and support group (P < .03), but the improvement did not extend to 12 months PostSession. Similar results were observed with misguided support scores in the Multidimensional Diabetes Questionnaire (P < .03) and susceptibility in health beliefs (P < .01), but no significant differences in HbA1c improvement were found between the two groups. Both interventions improved outcomes from baseline but were not sustained for 1 year.

Study of type a and b behavior patterns in patients with multiple sclerosis in an Iranian population

Directory of Open Access Journals (Sweden)

Vahid Shaygannejad

2013-01-01

Conclusions: People with type A behavior pattern are reported to have more stress, nervousness, and anxiety. In this study, MS patients had more characteristics of type A than type B behavior. This behavior was increased in individuals with EDSS score >4.5.

Captive chimpanzee (Pan troglodytes) behavior as a function of space per animal and enclosure type.

Science.gov (United States)

Neal Webb, Sarah J; Hau, Jann; Schapiro, Steven J

2018-03-01

Space per animal, or animal density, and enclosure type are important elements of functionally appropriate captive environments (FACEs) for chimpanzees. The National Institutes of Health (NIH) recommends that captive chimpanzees be maintained in areas of >250 ft 2 /animal. Several studies have investigated chimpanzee behavior in relation to space per animal, but only two studies have examined these variables while attempting to hold environmental complexity constant. Both have found few, if any, significant differences in behavior associated with increased space per animal. The NIH does not provide recommendations pertaining to enclosure type. Although Primadomes™ and corrals are considered acceptable FACE housing, no studies have investigated chimpanzee behavior in relation to these two common types of enclosures. We examined the NIH space per animal recommendation, and the effects of enclosure type, while maintaining similar levels of environmental complexity. We used focal animal observations to record the behavior of 22 chimpanzees in three social groups following within-facility housing transfers. Chimpanzees that were moved from an area with space below the NIH recommendation to the same type of enclosure with space above the recommendation (dome to double dome) exhibited significantly more locomotion and behavioral diversity post-transfer. Chimpanzees that were moved from an area with space below the recommendation to a different type of enclosure with space above the recommendation (dome to corral) exhibited significant increases in foraging and behavioral diversity, and a decrease in rough scratching. Lastly, chimpanzees that were moved from an area above the recommendation to a different enclosure type with space equal to the recommendation (corral to double dome) exhibited an increase in behavioral diversity. These results add to the body of literature that addresses the concept of specific minimum space requirements per chimpanzee, and highlight the

An Information—Motivation—Behavioral Skills Analysis of Diet and Exercise Behavior in Puerto Ricans with Diabetes

Science.gov (United States)

Osborn, Chandra Y.; Amico, K. Rivet; Fisher, William A.; Egede, Leonard E.; Fisher, Jeffrey D.

2011-01-01

Frameworks are needed to inform diabetes self-care programs for diverse populations. We tested the Information-Motivation-Behavioral Skills (IMB) model among Puerto Ricans with Type 2 diabetes (N=118). Structural equation models evaluated model fit and interrelations among constructs. For diet behavior, information and motivation related to behavioral skills (r=0.19, pmotivation related to behavioral skills (r=0.53, p<0.001), and behavioral skills related to behavior (r=0.45, p<0.001). The IMB model could inform interventions targeting these behaviors in diabetes. PMID:20453056

Dynamics in miscible blends of polyisoprene and poly(p-tert-butyl styrene): thermo–rheological behavior of components

OpenAIRE

Chen, Quan; Matsumiya, Yumi; Watanabe, Hiroshi

2011-01-01

For miscible blends of moderately entangled cis-polyisoprene (PI) and poly(p-tert-butyl styrene) (PtBS), viscoelastic and dielectric properties were examined over a wide range of temperature (T) to discuss the thermo–rheological behavior of respective components. Because PI has the type-A dipole, whereas PtBS does not, the slow dielectric response of the blends was exclusively attributed to the global motion of the PI chains therein. In most of the blends examined, the viscoelastic relaxation...

Application of neutron transmutation doping method to initially p-type silicon material.

Science.gov (United States)

Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

2009-01-01

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Tryptophan hydroxylase type 2 variants modulate severity and outcome of addictive behaviors in Parkinson's disease.

Science.gov (United States)

Cilia, Roberto; Benfante, Roberta; Asselta, Rosanna; Marabini, Laura; Cereda, Emanuele; Siri, Chiara; Pezzoli, Gianni; Goldwurm, Stefano; Fornasari, Diego

2016-08-01

Impulse control disorders and compulsive medication intake may occur in a minority of patients with Parkinson's disease (PD). We hypothesize that genetic polymorphisms associated with addiction in the general population may increase the risk for addictive behaviors also in PD. Sixteen polymorphisms in candidate genes belonging to five neurotransmitter systems (dopaminergic, catecholaminergic, serotonergic, glutamatergic, opioidergic) and the BDNF were screened in 154 PD patients with addictive behaviors and 288 PD control subjects. Multivariate analysis investigated clinical and genetic predictors of outcome (remission vs. persistence/relapse) after 1 year and at the last follow-up (5.1 ± 2.5 years). Addictive behaviors were associated with tryptophan hydroxylase type 2 (TPH2) and dopamine transporter gene variants. A subsequent analysis within the group of cases showed a robust association between TPH2 genotype and the severity of addictive behaviors, which survived Bonferroni correction for multiple testing. At multivariate analysis, TPH2 genotype resulted the strongest predictor of no remission at the last follow-up (OR[95%CI], 7.4[3.27-16.78] and 13.2[3.89-44.98] in heterozygous and homozygous carriers, respectively, p medication dose reduction was not a predictor. TPH2 haplotype analysis confirmed the association with more severe symptoms and lower remission rates in the short- and the long-term (p addictive behaviors in PD, modulating the severity of symptoms and the rate of remission at follow-up. If confirmed in larger independent cohorts, TPH2 genotype may become a useful biomarker for the identification of at-risk individuals. Copyright © 2016 Elsevier Ltd. All rights reserved.

Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

KAUST Repository

Nielsen, Christian B.

2016-07-22

The organic electrochemical transistor (OECT), capable of transducing small ionic fluxes into electronic signals in an aqueous envi-ronment, is an ideal device to utilize in bioelectronic applications. Currently, most OECTs are fabricated with commercially availa-ble conducting poly(3,4-ethylenedioxythiophene) (PEDOT)-based suspensions and are therefore operated in depletion mode. Here, we present a series of semiconducting polymers designed to elucidate important structure-property guidelines required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, elec-trochromic properties, operational voltage and stability. The demonstration of our molecular design strategy is the fabrication of accumulation mode OECTs that clearly outperform state-of-the-art PEDOT based devices, and show stability under aqueous oper-ation without the need for formulation additives and cross-linkers.

Silicon nanowire networks for multi-stage thermoelectric modules

International Nuclear Information System (INIS)

Norris, Kate J.; Garrett, Matthew P.; Zhang, Junce; Coleman, Elane; Tompa, Gary S.; Kobayashi, Nobuhiko P.

2015-01-01

Highlights: • Fabricated flexible single, double, and quadruple stacked Si thermoelectric modules. • Measured an enhanced power production of 27%, showing vertical stacking is scalable. • Vertically scalable thermoelectric module design of semiconducting nanowires. • Design can utilize either p or n-type semiconductors, both types are not required. • ΔT increases with thickness therefore power/area can increase as modules are stacked. - Abstract: We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stacking multiple nanowire thermoelectric devices in series is a scalable method to generate power by supplying larger temperature gradient. We present a vertically scalable multi-stage thermoelectric module design using semiconducting nanowires, eliminating the need for both n-type and p-type semiconductors for modules

On early starters and late bloomers: the development of sexual behavior in adolescence across personality types.

Science.gov (United States)

Baams, Laura; Overbeek, Geertjan; Dubas, Judith Semon; van Aken, Marcel A G

2014-01-01

Little is known about the relationship between personality and sexual development among mid-adolescents. In the current study, we used a person-centered approach to investigate the relation between personality types and the development of sexual behavior. We hypothesized that undercontrolling adolescents would engage in more advanced, casual, and risky sexual behavior compared to their resilient and overcontrolling peers. Data were used from 407 mid-adolescents (Mage = 14.5) followed across four measurement waves spanning 18 months. Results from latent class analyses (LCA) identified the three classical personality types: resilients, undercontrollers, and overcontrollers. Controlling for perceived pubertal timing and biological sex, latent growth curve analyses in Mplus showed that, at baseline, undercontrollers were more sexually experienced and engaged in more casual and risky sexual behavior than resilients and overcontrollers. Although initial levels of sexual behavior differed by personality types, over time increases in sexual behavior occurred at a similar rate across the types. Overall, the current study showed that undercontrolling adolescents are early sexual developers who engage in more advanced, casual, and risky sexual behavior than other adolescents. The implications of these findings for longer-term differences in sexual behavior between personality types in later adolescence are discussed.

Synthesis, crystal structure, and physical properties of the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases

Energy Technology Data Exchange (ETDEWEB)

Forbes, Scott; Yuan, Fang [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Kosuda, Kosuke; Kolodiazhnyi, Taras [Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Mozharivskyj, Yurij, E-mail: mozhar@mcmaster.ca [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada)

2016-01-15

The second and third known rare-earth bismuthide oxides, Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, have been discovered via high temperature reactions at 1300 °C. Like its Gd–Sb–O counterparts, the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases crystallize in the monoclinic C2/m space group, with the latter containing disordered Bi atoms along the b direction of the unit cell. Unlike the RE{sub 8}Sb{sub 3}O{sub 8} series, the formation of the Gd{sub 3}BiO{sub 3} phase does not necessarily precede the formation of Gd{sub 8}Bi{sub 3}O{sub 8}, which is likely due to the difficulty of accommodating bismuth in the RE–O framework due to its larger size. Physical property measurements performed on a pure Gd{sub 8}Bi{sub 3}O{sub 8} sample reveal semiconducting behavior. Although electronic structure calculations predict metallic behavior due to an unbalanced electron count, the semiconducting behavior originates from the Anderson localization of the Bi p states near the Fermi level as a result of atomic disorder. - Graphical abstract: Reaction of GdBi and Gd{sub 2}O{sub 3} at high temperatures yields Gd–Bi–O phases. - Highlights: • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, the second and third rare-earth bismuthide oxides, have been discovered. • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} are isostructural with RE{sub 3}SbO{sub 3} and RE{sub 8}Sb{sub 3}O{sub 8}. • Gd{sub 8}Bi{sub 3}O{sub 8} displays semiconducting behavior despite an unbalanced electron count. • Anderson localization of Bi p states results in semiconducting behavior in Gd{sub 8}Bi{sub 3}O{sub 8}.

Relations of behavioral autonomy to health outcomes among emerging adults with and without type 1 diabetes.

Science.gov (United States)

Helgeson, Vicki S; Reynolds, Kerry A; Becker, Dorothy; Escobar, Oscar; Siminerio, Linda

2014-01-01

To examine the relation of behavioral autonomy to psychological, behavioral, and physical health among emerging adults with and without type 1 diabetes. High school seniors with (n = 118) and without type 1 diabetes (n = 122) completed online questionnaires for three consecutive years. Behavioral autonomy, psychological health, risk behaviors, and diabetes outcomes were assessed. Regression analyses were conducted to predict Time 2 and 3 outcomes, controlling for Time 1 outcomes. There were no group differences in behavioral autonomy. Behavioral autonomy predicted better psychological health but only for emerging adults without diabetes. Behavioral autonomy was related to increased risk behavior for both groups. Behavioral autonomy was unrelated to self-care but predicted better glycemic control for females. Behavioral autonomy may be beneficial for psychological health, but is related to increased risk behavior. The implications of behavioral autonomy for emerging adults with type 1 diabetes require careful consideration. © The Author 2014. Published by Oxford University Press on behalf of the Society of Pediatric Psychology. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Fat- and fiber-related diet behavior among type 2 diabetes patients from distinct regions

Directory of Open Access Journals (Sweden)

Hendrychova T

2015-02-01

Full Text Available Tereza Hendrychova,1 Magda Vytrisalova,1 Abdullah Alwarafi,2 Jurjen Duintjer Tebbens,3,4 Helena Vankatova,1 Sandra Leal,5 Ales Antonin Kubena,1 Alena Smahelova,6 Jiri Vlcek1 1Department of Social and Clinical Pharmacy, Faculty of Pharmacy in Hradec Králové, Charles University in Prague, Hradec Králové, Czech Republic; 2Faculty of Dentistry, Ibb University, Ibb, Yemen; 3Department of Biophysics and Physical Chemics, Faculty of Pharmacy in Hradec Králové, Charles University in Prague, Hradec Králové, Czech Republic; 4Institute of Computer Science, Academy of Sciences of the Czech Republic, Prague, Czech Republic; 5Department of Clinical Pharmacy, El Rio Community Health Center, Tucson, AZ, USA; 6Diabetes Center, Department of Gerontology and Metabolism, University Hospital and Faculty of Medicine in Hradec Králové, Charles University in Prague, Hradec Králové, Czech Republic Purpose: Diet and eating habits are of key importance in patients with type 2 diabetes mellitus (T2DM. The purpose of this comparative study was to analyze fat- and fiber-related behavior (FFB in patients with T2DM from distinct cultural areas. Patients and methods: Observational study was carried out in the Czech Republic (CR (n=200, the US (n=207, and Yemen (n=200. Patients completed the Fat- and Fiber-related Diet Behavior Questionnaire (FFBQ. Results: Differences in all aspects of FFB among countries were found (P<0.05. The best fat-related behavior reported was from patients from the CR. Patients from the US showed the worst fat-related behavior in total. On the other hand, patients from the US reported the best fiber-related behavior. Patients from Yemen reached the worst scores in all fat-related domains. Patients from all studied countries reported the best results in the “modify meat” and “avoid fat as flavoring” and the worst in the “substitute high fiber” subscales. Conclusion: Professionals involved in the diet education of T2DM patients

Hall and thermoelectric evaluation of p-type InAs

Energy Technology Data Exchange (ETDEWEB)

Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2009-12-15

This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

Hall and thermoelectric evaluation of p-type InAs

International Nuclear Information System (INIS)

Wagener, M.C.; Wagener, V.; Botha, J.R.

2009-01-01

This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

Dual ohmic contact to N- and P-type silicon carbide

Science.gov (United States)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Change in the electrical conductivity of SnO2 crystal from n-type to p-type conductivity

International Nuclear Information System (INIS)

Villamagua, Luis; Stashans, Arvids; Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi; Carini, Manuela

2015-01-01

Highlights: • Switch from n-type to p-type conductivity in SnO 2 has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO 2 compound shows stable p-type conductivity. • Low resistivity (3.657 × 10 −1 Ω cm) has been obtained. • High carrier concentration (4.858 × 10 19 cm −3 ) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO 2 systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO 2 material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling

Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode.

Science.gov (United States)

Su, Chia-Ying; Lin, Chun-Han; Yao, Yu-Feng; Liu, Wei-Heng; Su, Ming-Yen; Chiang, Hsin-Chun; Tsai, Meng-Che; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

2017-09-04

The high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 μm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs.

Genetic deletion of P-glycoprotein alters stress responsivity and increases depression-like behavior, social withdrawal and microglial activation in the hippocampus of female mice.

Science.gov (United States)

Brzozowska, Natalia I; Smith, Kristie L; Zhou, Cilla; Waters, Peter M; Cavalcante, Ligia Menezes; Abelev, Sarah V; Kuligowski, Michael; Clarke, David J; Todd, Stephanie M; Arnold, Jonathon C

2017-10-01

P-glycoprotein (P-gp) is an ABC transporter expressed at the blood brain barrier and regulates the brain uptake of various xenobiotics and endogenous mediators including glucocorticoid hormones which are critically important to the stress response. Moreover, P-gp is expressed on microglia, the brain's immune cells, which are activated by stressors and have an emerging role in psychiatric disorders. We therefore hypothesised that germline P-gp deletion in mice might alter the behavioral and microglial response to stressors. Female P-gp knockout mice displayed an unusual, frantic anxiety response to intraperitoneal injection stress in the light-dark test. They also tended to display reduced conditioned fear responses compared to wild-type (WT) mice in a paradigm where a single electric foot-shock stressor was paired to a context. Foot-shock stress reduced social interaction and decreased microglia cell density in the amygdala which was not varied by P-gp genotype. Independently of stressor exposure, female P-gp deficient mice displayed increased depression-like behavior, idiosyncratic darting behavior, age-related social withdrawal and hyperactivity, facilitated sensorimotor gating and altered startle reactivity. In addition, P-gp deletion increased microglia cell density in the CA3 region of the hippocampus, and the microglial cells exhibited a reactive, hypo-ramified morphology. Further, female P-gp KO mice displayed increased glucocorticoid receptor (GR) expression in the hippocampus. In conclusion, this research shows that germline P-gp deletion affected various behaviors of relevance to psychiatric conditions, and that altered microglial cell activity and enhanced GR expression in the hippocampus may play a role in mediating these behaviors. Copyright © 2017 Elsevier Inc. All rights reserved.

Wear behavior of human enamel against lithium disilicate glass ceramic and type III gold.

Science.gov (United States)

Lee, Ahreum; Swain, Michael; He, Lihong; Lyons, Karl

2014-12-01

The wear behavior of human enamel that opposes different prosthetic materials is still not clear. The purpose of this in vitro study was to investigate and compare the friction and wear behavior of human tooth enamel that opposes 2 indirect restorative materials: lithium disilicate glass ceramic and Type III gold. Friction-wear tests on human enamel (n=5) that opposes lithium disilicate glass ceramic (n=5) and Type III gold (n=5) were conducted in a ball-on-flat configuration with a reciprocating wear testing apparatus. The wear pairs were subjected to a normal load of 9.8 N, a reciprocating amplitude of approximately 200 μm, and a reciprocating frequency of approximately 1.6 Hz for up to 1100 cycles per test under distilled water lubrication. The frictional force of each cycle was recorded, and the corresponding friction coefficient for different wear pairs was calculated. After wear testing, the wear scars on the enamel specimens were examined under a scanning electron microscope. Type III gold had a significantly lower steady-state friction coefficient (P=.009) and caused less wear damage on enamel than lithium disilicate glass ceramic. Enamel that opposed lithium disilicate glass ceramic exhibited cracks, plow furrows, and surface loss, which indicated abrasive wear as the prominent wear mechanism. In comparison, the enamel wear scar that opposed Type III gold had small patches of gold smear adhered to the surface, which indicated a predominantly adhesive wear mechanism. A lower friction coefficient and better wear resistance were observed when human enamel was opposed by Type III gold than by lithium disilicate glass ceramic in vitro. Copyright © 2014 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Semiconductive 3-D haloplumbate framework hybrids with high color rendering index white-light emission.

Science.gov (United States)

Wang, Guan-E; Xu, Gang; Wang, Ming-Sheng; Cai, Li-Zhen; Li, Wen-Hua; Guo, Guo-Cong

2015-12-01

Single-component white light materials may create great opportunities for novel conventional lighting applications and display systems; however, their reported color rendering index (CRI) values, one of the key parameters for lighting, are less than 90, which does not satisfy the demand of color-critical upmarket applications, such as photography, cinematography, and art galleries. In this work, two semiconductive chloroplumbate (chloride anion of lead(ii)) hybrids, obtained using a new inorganic-organic hybrid strategy, show unprecedented 3-D inorganic framework structures and white-light-emitting properties with high CRI values around 90, one of which shows the highest value to date.

Statistical analysis of traversal behavior under different types of traffic lights

Science.gov (United States)

Wang, Boran; Wang, Ziyang; Li, Zhiyin

2017-12-01

According to the video observation, it is found that the traffic signal type signal has a significant effect on the illegal crossing behavior of pedestrians at the intersection. Through the method of statistical analysis and variance analysis, the difference between the violation rate and the waiting position of pedestrians at different intersecting lights is compared, and the influence of traffic signal type on pedestrian crossing behavior is evaluated. The results show that the violation rate of the intersection of the static pedestrian lights is significantly higher than that of the countdown signal lights. There are significant differences in the waiting position of the intersection of different signal lights.

Functional characterisation of the type 1 von Willebrand disease candidate VWF gene variants: p.M771I, p.L881R and p.P1413L.

Science.gov (United States)

Berber, Ergul; Ozbil, Mehmet; Brown, Christine; Baslar, Zafer; Caglayan, S Hande; Lillicrap, David

2017-10-01

Abnormalities in the biosynthetic pathway or increased clearance of plasma von Willebrand factor (VWF) are likely to contribute to decreased plasma VWF levels in inherited type 1 von Willebrand disease (VWD). Recent studies demonstrated that 65% of type 1 VWD patients have candidate VWF mutations, the majority of which are missense variants. The purpose of this study was to explore the effects of three VWF missense mutations (p.M771I, p.L881R and p.P1413L) located in different functional domains of VWF, reported as candidate mutations in type 1 VWD patients in the course of the MCMDM-1VWD study. The focus of these studies was on the intracellular biosynthetic processing and localisation of VWF in a heterologous cell system. Molecular dynamic simulation for p.M771I and p.P1413L was also performed to analyse the conformational effects of the changes. As determined by immunofluorescence antibody staining and confocal microscopy of HEK293 cells, the intracellular localisation of recombinant VWF with the p.M771I variation was impaired. Transient transfection studies and phorbol myristate acetate stimulation in COS-7 cells revealed significant intracellular retention. In addition, major loss of VWF multimers was observed for only the p.M771I mutation. Molecular dynamic simulations on p.M771I mutant VWF revealed distinct structural rearrangements including a large deviation in the E' domain, and significant loss of β-sheet secondary structure. The pathogenic effects of candidate VWF gene mutations were explored in this study. In vitro expression studies in heterologous cell systems revealed impaired secretion of VWF and a dominant negative effect on the processing of the wild-type protein for only the p.M771I mutation and none of the mutations affected the regulated secretion.

Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

NARCIS (Netherlands)

Buchs, G.; Barkelid, K.M.; Bagiante, S.; Steele, G.A.; Zwiller, V.

2011-01-01

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with

Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

Science.gov (United States)

Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

2017-12-01

We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

International Nuclear Information System (INIS)

Jungwirth, T.; Novak, V.; Cukr, M.; Zemek, J.; Marti, X.; Horodyska, P.; Nemec, P.; Holy, V.; Maca, F.; Shick, A. B.; Masek, J.; Kuzel, P.; Nemec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.

2011-01-01

Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

Electrochemical study of the AISI 409 ferritic stainless steel: passive film stability and pitting nucleation and growth

International Nuclear Information System (INIS)

Souza, Juliana Sarango de; Oliveira, Leandro Antônio de; Antunes, Renato Altobelli; Sayeg, Isaac Jamil

2017-01-01

The aim of the present work was to study the passive film stability and pitting corrosion behavior of the AISI 409 stainless steel. The electrochemical tests were carried out in 0.1 M NaCl solution at room temperature. The general electrochemical behavior was assessed using electrochemical impedance spectroscopy (EIS) measurements whereas the semiconducting properties of the passive film were evaluated by the Mott-Schottky approach. Pitting corrosion was investigated using potentiodynamic and potentiostatic polarization tests. Surface morphology was examined using confocal laser scanning microscopy and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDS) analyses were carried out to identify the composition of precipitates that could act as preferential sites for the onset of pitting corrosion. The results showed that the passive film presents n-type semiconductive behavior. Grain boundaries played an important role as pitting initiation sites for the AISI 409 stainless steel. (author)

Electrochemical study of the AISI 409 ferritic stainless steel: passive film stability and pitting nucleation and growth

Energy Technology Data Exchange (ETDEWEB)

Souza, Juliana Sarango de [Universidade Federal de São Paulo (UNIFESP), Diadema, SP (Brazil). Departamento de Ciências Exatas e da Terra; Oliveira, Leandro Antônio de; Antunes, Renato Altobelli, E-mail: renato.antunes@ufabc.edu.br [Universidade Federal do ABC (CECS/UFABC), Santo André, SP (Brazil). Centro de Engenharia, Modelagem e Ciências Sociais Aplicadas; Sayeg, Isaac Jamil [Universidade de São Paulo (USP), SP (Brazil). Instituto de Geociências

2017-11-15

The aim of the present work was to study the passive film stability and pitting corrosion behavior of the AISI 409 stainless steel. The electrochemical tests were carried out in 0.1 M NaCl solution at room temperature. The general electrochemical behavior was assessed using electrochemical impedance spectroscopy (EIS) measurements whereas the semiconducting properties of the passive film were evaluated by the Mott-Schottky approach. Pitting corrosion was investigated using potentiodynamic and potentiostatic polarization tests. Surface morphology was examined using confocal laser scanning microscopy and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDS) analyses were carried out to identify the composition of precipitates that could act as preferential sites for the onset of pitting corrosion. The results showed that the passive film presents n-type semiconductive behavior. Grain boundaries played an important role as pitting initiation sites for the AISI 409 stainless steel. (author)

Fused electron deficient semiconducting polymers for air stable electron transport

KAUST Repository

Onwubiko, Ada

2018-01-23

Conventional semiconducting polymer synthesis typically involves transition metal-mediated coupling reactions that link aromatic units with single bonds along the backbone. Rotation around these bonds contributes to conformational and energetic disorder and therefore potentially limits charge delocalisation, whereas the use of transition metals presents difficulties for sustainability and application in biological environments. Here we show that a simple aldol condensation reaction can prepare polymers where double bonds lock-in a rigid backbone conformation, thus eliminating free rotation along the conjugated backbone. This polymerisation route requires neither organometallic monomers nor transition metal catalysts and offers a reliable design strategy to facilitate delocalisation of frontier molecular orbitals, elimination of energetic disorder arising from rotational torsion and allowing closer interchain electronic coupling. These characteristics are desirable for high charge carrier mobilities. Our polymers with a high electron affinity display long wavelength NIR absorption with air stable electron transport in solution processed organic thin film transistors.

Synthesis of graft copolymers onto starch and its semiconducting properties

Directory of Open Access Journals (Sweden)

Nevin Çankaya

Full Text Available Literature review has revealed that, although there are studies about grafting on natural polymers, especially on starch, few of them are about electrical properties of graft polymers. Starch methacrylate (St.met was obtained by esterification of OH groups on natural starch polymer for this purpose. Grafting of synthesized N-cyclohexyl acrylamide (NCA and commercial methyl methacrylate (MMA monomers with St.met was done by free radical polymerization method. The graft copolymers were characterized with FT-IR spectra, thermal and elemental analysis. Thermal stabilities of the graft copolymers were determined by TGA (thermo gravimetric analysis method and thermal stability of the copolymers is decreased via grafting. The electrical conductivity of the polymers was measured as a function of temperature and it has been observed that electrical conductivity increases with increasing temperature. The absorbance and transmittance versus wavelength of the polymers have been measured. Keywords: Starch, Graft copolymer, Semiconducting, Thermal stability, Starch methacrylate

Fused electron deficient semiconducting polymers for air stable electron transport

KAUST Repository

Onwubiko, Ada; Yue, Wan; Jellett, Cameron; Xiao, Mingfei; Chen, Hung-Yang; Ravva, Mahesh Kumar; Hanifi, David A.; Knall, Astrid-Caroline; Purushothaman, Balaji; Nikolka, Mark; Flores, Jean-Charles; Salleo, Alberto; Bredas, Jean-Luc; Sirringhaus, Henning; Hayoz, Pascal; McCulloch, Iain

2018-01-01

Conventional semiconducting polymer synthesis typically involves transition metal-mediated coupling reactions that link aromatic units with single bonds along the backbone. Rotation around these bonds contributes to conformational and energetic disorder and therefore potentially limits charge delocalisation, whereas the use of transition metals presents difficulties for sustainability and application in biological environments. Here we show that a simple aldol condensation reaction can prepare polymers where double bonds lock-in a rigid backbone conformation, thus eliminating free rotation along the conjugated backbone. This polymerisation route requires neither organometallic monomers nor transition metal catalysts and offers a reliable design strategy to facilitate delocalisation of frontier molecular orbitals, elimination of energetic disorder arising from rotational torsion and allowing closer interchain electronic coupling. These characteristics are desirable for high charge carrier mobilities. Our polymers with a high electron affinity display long wavelength NIR absorption with air stable electron transport in solution processed organic thin film transistors.

Fused electron deficient semiconducting polymers for air stable electron transport.

Science.gov (United States)

Onwubiko, Ada; Yue, Wan; Jellett, Cameron; Xiao, Mingfei; Chen, Hung-Yang; Ravva, Mahesh Kumar; Hanifi, David A; Knall, Astrid-Caroline; Purushothaman, Balaji; Nikolka, Mark; Flores, Jean-Charles; Salleo, Alberto; Bredas, Jean-Luc; Sirringhaus, Henning; Hayoz, Pascal; McCulloch, Iain

2018-01-29

Conventional semiconducting polymer synthesis typically involves transition metal-mediated coupling reactions that link aromatic units with single bonds along the backbone. Rotation around these bonds contributes to conformational and energetic disorder and therefore potentially limits charge delocalisation, whereas the use of transition metals presents difficulties for sustainability and application in biological environments. Here we show that a simple aldol condensation reaction can prepare polymers where double bonds lock-in a rigid backbone conformation, thus eliminating free rotation along the conjugated backbone. This polymerisation route requires neither organometallic monomers nor transition metal catalysts and offers a reliable design strategy to facilitate delocalisation of frontier molecular orbitals, elimination of energetic disorder arising from rotational torsion and allowing closer interchain electronic coupling. These characteristics are desirable for high charge carrier mobilities. Our polymers with a high electron affinity display long wavelength NIR absorption with air stable electron transport in solution processed organic thin film transistors.

Gender-typed behavior over time in children with lesbian, gay, and heterosexual parents.

Science.gov (United States)

Goldberg, Abbie E; Garcia, Randi L

2016-10-01

The current longitudinal study examined patterns and predictors of parent-reported gender-typed play behavior in adopted boys and girls in lesbian, gay, and heterosexual 2-parent families, across early childhood (Mage = 2.82 to 6.06 years). Specifically, using a sample of 181 couples (56 lesbian couples, 48 gay male couples, and 77 heterosexual couples), we examined parent reports of children's gender-typed play behavior on the Pre-School Activities Inventory (PSAI; Golombok & Rust, 1993) at 3 time points (mean age = 2.82 years at T1, 3.93 years at T2, and 6.06 years at T3). Family structure variables (i.e., parents' gender and sexual orientation; children's gender and sibling status) were included as predictors. At T1, according to parent reports, children in lesbian-parent families had less gender-differentiated behavior (boys were less masculine, girls were less feminine) than children in heterosexual- and gay-parent families, whereas the degree of gender differentiation did not differ between heterosexual- versus gay-parent families. Findings from a Common Fate Growth Model (Ledermann & Macho, 2014) revealed that, regardless of family type, the parent-reported gender-typed behavior of boys, but not girls, significantly changed over time (i.e., boys' behavior became more masculine). Our findings have implications for researchers who study gender development in children and adolescents, particularly those who are being raised by 2 mothers or 2 fathers. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

Gender-Typed Behavior Over Time in Children with Lesbian, Gay, and Heterosexual Parents

Science.gov (United States)

Goldberg, Abbie E.; Garcia, Randi L.

2016-01-01

The current longitudinal study examined patterns and predictors of parent-reported gender-typed play behavior in adopted boys and girls in lesbian, gay, and heterosexual two-parent families, across early childhood (Mage = 2.82 to 6.06 years). Specifically, using a sample of 181 couples (56 lesbian couples, 48 gay male couples, and 77 heterosexual couples), we examined parent reports of children’s gender-typed play behavior on the Pre-School Activities Inventory (PSAI; Golombok & Rust, 1993) at three time points (mean age = 2.82 years at T1, 3.93 years at T2, and 6.06 years at T3). Family structure variables (i.e., parents’ gender and sexual orientation; children’s gender and sibling status) were included as predictors. At T1, according to parent reports, children in lesbian-parent families had less gender-differentiated behavior (boys were less masculine, girls were less feminine) than children in heterosexual- and gay-parent families, whereas the degree of gender differentiation did not differ between heterosexual- versus gay-parent families. Findings from a Common Fate Growth Model (Ledermann & Macho, 2014) revealed that, regardless of family type, the parent-reported gender-typed behavior of boys, but not girls, significantly changed over time (i.e., boys’ behavior became more masculine). Our findings have implications for researchers who study gender development in children and adolescents, particularly those who are being raised by two mothers or two fathers. PMID:27416364

Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

Directory of Open Access Journals (Sweden)

Matteo Bonomo

2016-05-01

Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

Microstructures and properties of low-chromium high corrosion-resistant TiC-VC reinforced Fe-based laser cladding layer

International Nuclear Information System (INIS)

Zhang, Hui; Zou, Yong; Zou, Zengda; Wu, Dongting

2015-01-01

Highlights: • The cladding layer with 3.0%Cr and 0.25%CeO 2 showed a good corrosion resistance. • Passive film formed on the cladding layer without Cr and CeO 2 was Fe 3 O 4 . • Fe 3 O 4 displayed p type semiconductivity. • Passive film formed on the cladding layer with Cr and CeO 2 was Fe(OH) 3 and Cr(OH) 3 . • Fe(OH) 3 displayed n type while Cr(OH) 3 displayed p type semiconductivity. - Abstract: Effects of 3.0 wt.%Cr and/or 0.25 wt.%CeO 2 on microstructures and properties of TiC-VC reinforced Fe-based cladding layer were investigated by using X-ray diffractometry (XRD), scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS). Passive films formed on cladding layers surface were investigated by using X-ray photoelectron spectroscopy (XPS) and Mott-Schottky analysis. Results showed that phases of cladding layers were α-Fe, γ-Fe, TiC, VC and TiVC 2 . There were no obvious effects of adding 3.0 wt.%Cr and/or 0.25 wt.%CeO 2 on cladding layers phases. The microstructure of the cladding layer with 3.0 wt.%Cr and 0.25 wt.%CeO 2 was lath martensite and retained austenite. Microhardness of the cladding layer with 0.25 wt.%CeO 2 decreased slightly. Microhardness and corrosion resistance of the cladding layer with 3.0 wt.%Cr and 0.25 wt.%CeO 2 both increased, the corrosion resistance increased 7.33 times while the EIS Nyquist spectrum transformed into a capacitive arc. The passive film formed on the cladding layer without Cr and CeO 2 was Fe 3 O 4 which displayed p type semiconductivity. The passive film formed on the cladding layer with 3.0 wt.%Cr and 0.25 wt.%CeO 2 was composed of Fe(OH) 3 and Cr(OH) 3 , which displayed n and p type semiconductivity respectively

Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si

International Nuclear Information System (INIS)

Charitidis, C.A.; Skarmoutsou, A.; Nassiopoulou, A.G.; Dragoneas, A.

2011-01-01

Highlights: → The nanomechanical properties of bulk crystalline Si. → The nanomechanical properties of porous Si. → The elastic-plastic deformation of porous Si compared to bulk crystalline quantified by nanoindentation data analysis. - Abstract: The nanomechanical properties and the nanoscale deformation of thick porous Si (PSi) layers of two different morphologies, grown electrochemically on p-type and p+-type Si wafers were investigated by the depth-sensing nanoindentation technique over a small range of loads using a Berkovich indenter and were compared with those of bulk crystalline Si. The microstructure of the thick PSi layers was characterized by field emission scanning electron microscopy. PSi layers on p+-type Si show an anisotropic mesoporous structure with straight vertical pores of diameter in the range of 30-50 nm, while those on p-type Si show a sponge like mesoporous structure. The effect of the microstructure on the mechanical properties of the layers is discussed. It is shown that the hardness and Young's modulus of the PSi layers exhibit a strong dependence on their microstructure. In particular, PSi layers with the anisotropic straight vertical pores show higher hardness and elastic modulus values than sponge-like layers. However, sponge-like PSi layers reveal less plastic deformation and higher wear resistance compared with layers with straight vertical pores.

Parent-child relationships in Type 1 diabetes: associations among child behavior, parenting behavior, and pediatric parenting stress.

Science.gov (United States)

Sweenie, Rachel; Mackey, Eleanor R; Streisand, Randi

2014-03-01

Interactions between parents and children can influence behavioral and emotional functioning related to Type 1 diabetes (T1D), yet have been relatively unexplored during preadolescence. The present study examined associations among child problem behaviors, critical parenting behaviors, and pediatric parenting stress in a sample of preadolescent youth with T1D. Data are available from 86 preadolescent-parent dyads who participated in the initial baseline assessment of a randomized controlled trial designed to assess the efficacy of an adherence promotion program. Measures included the Eyberg Child Behavior Inventory, the Diabetes Family Behavior Checklist, and the Pediatric Inventory for Parents. After controlling for significant demographic and medical characteristics, parents who reported their child's behavior as more problematic reported more difficulty with pediatric parenting stress, which was also associated with more child-reported critical parenting behaviors. Child problem behaviors and critical parenting behaviors were associated with one another, partially via their association with increased pediatric parenting stress. Potential clinical applications include interventions geared toward helping parents manage difficult child behaviors as well as cope with pediatric parenting stress, with the ultimate goal of improving the parent-child relationship and management of T1D.

Race/Ethnicity and gender differences in health intentions and behaviors regarding exercise and diet for adults with type 2 diabetes: a cross-sectional analysis.

Science.gov (United States)

Gavin, James R; Fox, Kathleen M; Grandy, Susan

2011-07-05

Self-management is the cornerstone of diabetes control and prevention of complications; however, it is undetermined whether differences in intention to adopt healthy lifestyles and actual healthy behavior exist across race/ethnic groups. This study evaluated the differences across racial-ethnic groups in self-reported medical advice received and health intentions and behaviors among adults with type 2 diabetes mellitus. A cross-sectional analysis of the 2007 SHIELD US survey ascertained self-reported health intentions and behaviors for regular exercise, diet, and weight management among Non-Hispanic Caucasian (n = 2526), Non-Hispanic African-American (n = 706), and Hispanic (n = 179) respondents with type 2 diabetes. A similar proportion of respondents from each race-gender group (43%-56%) reported receiving healthcare advice to increase their exercise (P = 0.32). Significantly more minorities reported an intention to follow the exercise recommendation compared with Non-Hispanic Caucasians (P = 0.03). More Non-Hispanic African-American (29%) and Hispanic (27%) men reported exercising regularly compared with other race-gender groups (P = 0.02). Significantly more Non-Hispanic Caucasian women (74%) and Hispanic women (79%) reported trying to lose weight compared with other groups (P Differences in health intentions and healthy behaviors were noted across race-gender groups. More Non-Hispanic African-American men reported an intention to follow advice on exercising and self-report of exercising regularly was also higher compared with other race-gender groups. More Hispanic men reported high physical activity levels than other groups. Despite an increased willingness to follow healthcare recommendations for diet, >50% of respondents were obese among all race-gender groups.

Unique crystallization behavior of sodium manganese pyrophosphate Na2MnP2O7 glass and its electrochemical properties

Directory of Open Access Journals (Sweden)

Morito Tanabe

2017-06-01

Full Text Available Crystallization behavior of Na2MnP2O7 precursor glass was examined. Layered type Na2MnP2O7 was formed at 461 °C for 3 h in N2 filled electric furnace. Irreversible phase change was confirmed from layered Na2MnP2O7 to β-Na2MnP2O7 over 600 °C. At 650 °C crystallized phase was completely changed to β-phase. By means of charge and discharge testing it is found that layered Na2MnP2O7 is also active as cathode in sodium ion batteries. We found glass-ceramics technology is one of the suitable process for the synthesis of layered Na2MnP2O7 cathode without any complicate process.

Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

KAUST Repository

Lu, Ming-Pei

2009-03-11

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

Synthesis of iminodi(methylphosphonic acid)-type chitosan resin and its adsorption behavior for trace metals

International Nuclear Information System (INIS)

Yamakawa, Satoko; Oshita, Koji; Sabarudin, Akhmad; Oshima, Mitsuko; Motomizu, Shoji

2004-01-01

A chitosan-based resin possessing the iminodi(methyphosphonic acid) moiety (IDP-type chitrosan resin) was synthesized by using cross-linked chitosan as a base material. The adsorption behavior of trace metal ions on the IDP-type chitosan resin was systematically investigated using a mini-column (1 ml of the resin) packed with the resin. The concentrations of metal ions in the effluents were measured by ICP-MS and ICP-AES. The resin could adsorb four metals, such as In(III), Sn(II), Th(IV), and U(VI), by almost 100% over a wide pH range (1-7). Uranium(VI) and thorium could not be eluted with nitric acid and hydrochloric acid (1-6 M); other metal ions were easily and readily eluted with 1 M nitric acid. The IDP-type chitosan resin synthesized in this work can be applied to the separation of U(VI) and Th(IV) from other metal ions. (author)

Mediators of physical activity change in a behavioral modification program for type 2 diabetes patients

Directory of Open Access Journals (Sweden)

Tudor-Locke Catrine E

2011-09-01

Full Text Available Abstract Background Many studies have reported significant behavioral impact of physical activity interventions. However, few have examined changes in potential mediators of change preceding behavioral changes, resulting in a lack of information concerning how the intervention worked. Our purpose was to examine mediation effects of changes in psychosocial variables on changes in physical activity in type 2 diabetes patients. Methods Ninety-two patients (62 ± 9 years, 30, 0 ± 2.5 kg/m2, 69% males participated in a randomized controlled trial. The 24-week intervention was based on social-cognitive constructs and consisted of a face-to-face session, telephone follow-ups, and the use of a pedometer. Social-cognitive variables and physical activity (device-based and self-reported were collected at baseline, after the 24-week intervention and at one year post-baseline. PA was measured by pedometer, accelerometer and questionnaire. Results Post-intervention physical activity changes were mediated by coping with relapse, changes in social norm, and social modeling from family members (p ≤ 0.05. One-year physical activity changes were mediated by coping with relapse, changes in social support from family and self-efficacy towards physical activity barriers (p ≤ 0.05 Conclusions For patients with type 2 diabetes, initiatives to increase their physical activity could usefully focus on strategies for resuming regular patterns of activity, on engaging family social support and on building confidence about dealing with actual and perceived barriers to activity. Trial Registration NCT00903500, ClinicalTrials.gov.

Comparing Executive Function and Behavioral Inhibition in Schizophrenia, Bipolar Mood Disorder Type I and Normal Groups

Directory of Open Access Journals (Sweden)

Marziye Khodaee

2015-11-01

Full Text Available Introduction: Cognitive performance in patients with schizophrenia and Bipolar I disorder seems to be different from the normal individuals, that these defects affect their treatment results. Therefore, this study aimed to compare executive function and behavioral inhibition within patients suffering from schizophrenia, bipolar type I as well as a normal group. Methods: In this descriptive-comparative study, out of all patients hospitalized in daily psychiatric clinic in Najafabad in 2014 due to these disorders, 20 schizophrenia and 20 bipolar type I as well as 20 normal individuals were selected via the convinience sampling. All the study participants completed the computerizing tests including Tower of London and Go-No Go. The study data were analyzed utilizing SPSS software (ver 22 via MANOVA. Results: The study findings revealed a significant difference between the two patient groups and the normal group in regard with executive function and behavioral inhibition (p<0.05, whereas no differences were detected between schizophrenics and bipolar patient groups. Furthermore, patients suffering from schizophrenia and bipolar I mood disorder demonstrated significantly poor performance in cognitive function and behavioral inhibition compared to the normal group. Conclusion: The present study results can be significantly applied in pathology and therapy of these disorders, so as recognizing the inability of such patients can be effective in developing cognitive rehabilitation programs in these patients.

Type of musical soundtrack affects behavior in gambling.

Science.gov (United States)

Mentzoni, Rune A; Laberg, Jon Christian; Brunborg, Geir Scott; Molde, Helge; Ståle, Pallesen

2014-06-01

A long existing notion is that the presence of music might affect gambling behavior. In spite of this, little empirical research on the subject exists. The main aim of the present study was to corroborate and elaborate on the existing findings concerning gambling and music through a laboratory based experiment. A nonclinical sample of 101 undergraduate students (72 females, 29 males) played a computerized gambling task in which either a high-tempo or a low-tempo musical soundtrack was present. Persistence in gambling, reaction time and evaluation of the game comprised the outcome variables. Low-tempo music was associated with increased gambling persistence in terms of overall number of bets placed, whereas high-tempo music was associated with intensified gambling in terms of faster reaction time per placed bet. Type of soundtrack was not associated with game evaluation. Our findings add to the existing knowledge by showing that both low-tempo and high-tempo music can be associated with more risky gambling behavior, the former by increasing gambling persistence and the latter by reducing reaction time for bets placed. In sum, the existing studies provide compelling evidence that music can affect various aspects of gambling behavior. These findings may have clinical implications by educating gamblers on the effects of structural mechanisms in gambling on behavior.

Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

Science.gov (United States)

Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

2018-04-01

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

Fuel type characterization and potential fire behavior estimation in Sardinia and Corsica islands

Science.gov (United States)

Bacciu, V.; Pellizzaro, G.; Santoni, P.; Arca, B.; Ventura, A.; Salis, M.; Barboni, T.; Leroy, V.; Cancellieri, D.; Leoni, E.; Ferrat, L.; Perez, Y.; Duce, P.; Spano, D.

2012-04-01

Wildland fires represent a serious threat to forests and wooded areas of the Mediterranean Basin. As recorded by the European Commission (2009), during the last decade Southern Countries have experienced an annual average of about 50,000 forest fires and about 470,000 burned hectares. The factor that can be directly manipulated in order to minimize fire intensity and reduce other fire impacts, such as three mortality, smoke emission, and soil erosion, is wildland fuel. Fuel characteristics, such as vegetation cover, type, humidity status, and biomass and necromass loading are critical variables in affecting wildland fire occurrence, contributing to the spread, intensity, and severity of fires. Therefore, the availability of accurate fuel data at different spatial and temporal scales is needed for fire management applications, including fire behavior and danger prediction, fire fighting, fire effects simulation, and ecosystem simulation modeling. In this context, the main aims of our work are to describe the vegetation parameters involved in combustion processes and develop fire behavior fuel maps. The overall work plan is based firstly on the identification and description of the different fuel types mainly affected by fire occurrence in Sardinia (Italy) and Corsica (France) Islands, and secondly on the clusterization of the selected fuel types in relation to their potential fire behavior. In the first part of the work, the available time series of fire event perimeters and the land use map data were analyzed with the purpose of identifying the main land use types affected by fires. Thus, field sampling sites were randomly identified on the selected vegetation types and several fuel variables were collected (live and dead fuel load partitioned following Deeming et al., (1977), depth of fuel layer, plant cover, surface area-to-volume ratio, heat content). In the second part of the work, the potential fire behavior for every experimental site was simulated using

STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET

OpenAIRE

Akansha Ephraim*, Neelesh Agrawal, Anil Kumar, A.K. Jaiswal

2017-01-01

In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics w...

Increased p50/p50 NF-κB Activation in Human Papillomavirus Type 6- or Type 11-Induced Laryngeal Papilloma Tissue

Science.gov (United States)

Vancurova, Ivana; Wu, Rong; Miskolci, Veronika; Sun, Shishinn

2002-01-01

We have observed elevated NF-κB DNA-binding activity in nuclear extracts from human papillomavirus type 6- and 11-infected laryngeal papilloma tissues. The predominant DNA-binding species is the p50/p50 homodimer. The elevated NF-κB activity could be correlated with a reduced level of cytoplasmic IκBβ and could be associated with the overexpression of p21CIP1/WAF1 in papilloma cells. Increased NF-κB activity and cytoplasmic accumulation of p21CIP1/WAF1 might counteract death-promoting effects elicited by overexpressed PTEN and reduced activation of Akt and STAT3 previously noted in these tissues. PMID:11773428

P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

CERN Document Server

AUTHOR|(CDS)2084505

2015-01-01

In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

Comparison of ompP5 sequence-based typing and pulsed-filed gel ...

African Journals Online (AJOL)

In this study, comparison of the outer membrane protein P5 gene (ompP5) sequence-based typing with pulsed-field gel electrophoresis (PFGE) for the genotyping of Haemophilus parasuis, the 15 serovar reference strains and 43 isolates were investigated. When comparing the two methods, 31 ompP5 sequence types ...

Effect of the spacer group nature on the optical and electrical properties of confined poly( p-phenylene vinylene) derivatives

Science.gov (United States)

Benzarti-Ghédira, Maha; Zahou, Imen; Hrichi, Haikel; Jaballah, Nejmeddine; Ben Chaâbane, Rafik; Majdoub, Mustapha; Ben Ouada, Hafedh

2015-09-01

This study is an investigation about the effect of chemical modification on the morphological, optical and electrical properties of semiconducting organic thin films. Two confined poly( p-phenylene vinylene) (PPV)-type polymers containing different spacer groups were studied: P1 has an isopropylidene spacer group and P2 with hexafluoroisopropylidene spacer. The UV-Vis absorption and PL analysis showed a stronger π- π interaction in the P1 film; in P2, the π-stacking is limited by the introduction of a bulky trifluoromethyl (CF3) groups on the spacer units. The P2 exhibits a better film quality as illustrated by the atomic force microscopy. The HOMO and LUMO energy levels and electrochemical band gap of the polymers were determinate by the cyclic voltammetry. The electrical properties of ITO/PPV derivative/Al diodes were investigated by means of current-voltage and show a space-charge-limited current conduction mechanism with higher mobility in the P2 thin layer. The impedance spectra of the devices can be discussed in terms of an equivalent circuit model designed as a parallel resistance ( R p) and capacitance ( C p) network in series with a resistance.

Childhood gender-typed behavior and adolescent sexual orientation: A longitudinal population-based study.

Science.gov (United States)

Li, Gu; Kung, Karson T F; Hines, Melissa

2017-04-01

Lesbian and gay individuals have been reported to show more interest in other-sex, and/or less interest in same-sex, toys, playmates, and activities in childhood than heterosexual counterparts. Yet, most of the relevant evidence comes from retrospective studies or from prospective studies of clinically referred, extremely gender nonconforming children. In addition, findings are mixed regarding the relation between childhood gender-typed behavior and the later sexual orientation spectrum from exclusively heterosexual to exclusively lesbian/gay. The current study drew a sample (2,428 girls and 2,169 boys) from a population-based longitudinal study, and found that the levels of gender-typed behavior at ages 3.5 and 4.75 years, although less so at age 2.5 years, significantly and consistently predicted adolescents' sexual orientation at age 15 years, both when sexual orientation was conceptualized as 2 groups or as a spectrum. In addition, within-individual change in gender-typed behavior during the preschool years significantly related to adolescent sexual orientation, especially in boys. These results suggest that the factors contributing to the link between childhood gender-typed behavior and sexual orientation emerge during early development. Some of those factors are likely to be nonsocial, because nonheterosexual individuals appear to diverge from gender norms regardless of social encouragement to conform to gender roles. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Candidate for a fully frustrated square lattice in a verdazyl-based salt

Science.gov (United States)

Yamaguchi, H.; Tamekuni, Y.; Iwasaki, Y.; Hosokoshi, Y.

2018-05-01

We present an experimental realization of an S =1 /2 fully frustrated square lattice (FFSL) composed of a verdazyl-based salt (p -MePy-V) (TCNQ ) .(CH3)2CO . Ab initio molecular orbital calculations indicate that there are four types of competing ferro- and antiferromagnetic nearest-neighbor interactions present in the system, which combine to form an S =1 /2 FFSL. Below room temperature, the magnetic susceptibility of the material can be considered to arise from the S =1 /2 FFSL formed by the p -MePy-V and indicates that the system forms a quantum valence-bond solid state whose excitation energy is gapped. Furthermore, we also observe semiconducting behavior arising from the one-dimensional chain structure of the TCNQ molecules.

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Songrui Zhao

2017-09-01

Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

Brief report: self-care behaviors of children with type 1 diabetes living in Puerto Rico.

Science.gov (United States)

Streisand, Randi; Respess, Deedrah; Overstreet, Stacy; Gonzalez de Pijem, Lilliam; Chen, Ru San; Holmes, Clarissa

2002-12-01

To examine self-care behaviors among children and adolescents with type 1 diabetes living in Puerto Rico, to determine the relationship between self-care and demographic variables, and to investigate the utility of the 24-hour recall interview within a Hispanic population. Forty-one children (M age = 12.6 years) with type 1 diabetes, and their mothers, were administered the 24-hour recall interview on three separate occasions to assess diabetes-related self-care behaviors. Children reported self-care behaviors that included daily administration of an average of two insulin injections and two blood glucose tests, and consumption of 5.5 meals a day comprised of 52% carbohydrates and 29% fat. Younger age, female gender, longer illness duration, and better metabolic control were associated with higher rates of several self-care behaviors. Data provide a first look at self-care behaviors of children with type 1 diabetes living in Puerto Rico and suggest the utility of the 24-hour recall interview within this population.

Characterization of plasma etching damage on p-type GaN using Schottky diodes

International Nuclear Information System (INIS)

Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

2008-01-01

The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

Electrical Properties Of Amorphous Selenium (aSe)/p-Type Silicon ...

African Journals Online (AJOL)

aSe) on four chemically etched p-type silicon crystals (pSi) each of 5Ω-cm resistivity and carrier concentration of 2.8x1015cm-3. Two of the pSi crystals have surface orientation of (111) while the other two crystals have (100) surface orientation.

Mapping Spaces, Centralizers, and p-Local Finite Groups of Lie Type

DEFF Research Database (Denmark)

Laude, Isabelle

We study the space of maps from the classifying space of a finite p-group to theBorel construction of a finite group of Lie type G in characteristic p acting on itsbuilding. The first main result is a description of the homology with Fp-coefficients,showing that the mapping space, up to p...... between a finite p-group and theuncompleted classifying space of the p-local finite group coming from a finite groupof Lie type in characteristic p, providing some of the first results in this uncompletedsetting.......-completion, is a disjoint union indexedover the group homomorphism up to conjugation of classifying spaces of centralizersof p-subgroups in the underlying group G. We complement this description bydetermining the actual homotopy groups of the mapping space. These resultstranslate to descriptions of the space of maps...

High performance p-type half-Heusler thermoelectric materials

Science.gov (United States)

Yu, Junjie; Xia, Kaiyang; Zhao, Xinbing; Zhu, Tiejun

2018-03-01

Half-Heusler compounds, which possess robust mechanical strength, good high temperature thermal stability and multifaceted physical properties, have been verified as a class of promising thermoelectric materials. During the last two decades, great progress has been made in half-Heusler thermoelectrics. In this review, we summarize some representative work of p-type half-Heusler materials, the thermoelectric performance of which has been remarkably enhanced in recent years. We introduce the features of the crystal and electronic structures of half-Heusler compounds, and successful strategies for optimizing electrical and thermal transport in the p-type RFeSb (R  =  V, Nb, Ta) and MCoSb (M  =  Ti, Zr, Hf) based systems, including band engineering, the formation of solid solutions and hierarchical phonon scattering. The outlook for future research directions of half-Heusler thermoelectrics is also presented.

Electrochemical and passive behaviour of tin alloyed ferritic stainless steel in concrete environment

Science.gov (United States)

Luo, Hong; Su, Huaizhi; Li, Baosong; Ying, Guobing

2018-05-01

In the present work, the electrochemical behavior and semiconducting properties of a tin alloyed ferritic stainless steel in simulated concrete solution in presence of NaCl were estimated by conventional electrochemical methods such as potentiodynamic polarization, electrochemical impedance spectroscopy, and capacitance measurement (Mott-Schottky approach). The surface passive film was analyzed by X-ray photoelectron spectroscopy. The results revealed a good agreement between pitting corrosion, electrochemical behaviour, and electronic properties. The p and n-type bilayer structure passive film were observed. The increase of Sn4+ oxide species in the passive film shows no beneficial effects on the pitting corrosion. In addition, the dehydration of the passive film was further discussed.

Tailoring graphene-based electrodes from semiconducting to metallic to increase the energy density in supercapacitors

Science.gov (United States)

Vatamanu, Jenel; Ni, Xiaojuan; Liu, Feng; Bedrov, Dmitry

2015-11-01

The semiconducting character of graphene and some carbon-based electrodes can lead to noticeably lower total capacitances and stored energy densities in electric double layer (EDL) capacitors. This paper discusses the chemical and electronic structure modifications that enhance the available energy bands, density of states and quantum capacitance of graphene substrates near the Fermi level, therefore restoring the conducting character of these materials. The doping of graphene with p or n dopants, such as boron and nitrogen atoms, or the introduction of vacancy defects that introduce zigzag edges, can significantly increase the quantum capacitance within the potential range of interest for the energy storage applications by either shifting the Dirac point away from the Fermi level or by eliminating the Dirac point. We show that a combination of doping and vacancies at realistic concentrations is sufficient to increase the capacitance of a graphene-based electrode to within 1 μF cm-2 from that of a metallic surface. Using a combination of ab initio calculations and classical molecular dynamics simulations we estimate how the changes in the quantum capacitance of these electrode materials affect the total capacitance stored by the open structure EDL capacitors containing room temperature ionic liquid electrolytes.

Tailoring graphene-based electrodes from semiconducting to metallic to increase the energy density in supercapacitors

International Nuclear Information System (INIS)

Vatamanu, Jenel; Ni, Xiaojuan; Liu, Feng; Bedrov, Dmitry

2015-01-01

The semiconducting character of graphene and some carbon-based electrodes can lead to noticeably lower total capacitances and stored energy densities in electric double layer (EDL) capacitors. This paper discusses the chemical and electronic structure modifications that enhance the available energy bands, density of states and quantum capacitance of graphene substrates near the Fermi level, therefore restoring the conducting character of these materials. The doping of graphene with p or n dopants, such as boron and nitrogen atoms, or the introduction of vacancy defects that introduce zigzag edges, can significantly increase the quantum capacitance within the potential range of interest for the energy storage applications by either shifting the Dirac point away from the Fermi level or by eliminating the Dirac point. We show that a combination of doping and vacancies at realistic concentrations is sufficient to increase the capacitance of a graphene-based electrode to within 1 μF cm −2 from that of a metallic surface. Using a combination of ab initio calculations and classical molecular dynamics simulations we estimate how the changes in the quantum capacitance of these electrode materials affect the total capacitance stored by the open structure EDL capacitors containing room temperature ionic liquid electrolytes. (paper)

Gender Labeling and the Adoption of Sex-Typed Behaviors

Science.gov (United States)

Fagot, Beverly I.; And Others

1986-01-01

Tests the ability of 43 children, ranging in age from 20 months to 40 months, to discriminate between pictures of boys and girls and male and female adults. Compares children who passed this gender-task with those who failed it on three behaviors most often categorized as sex-typed: toy choice, aggression, and peer playmate selection. (HOD)

Rigidity in Gender-Typed Behaviors in Early Childhood: A Longitudinal Study of Ethnic Minority Children

Science.gov (United States)

Ruble, Diane; Tamis-LeMonda, Catherine; Shrout, Patrick E.

2014-01-01

A key prediction of cognitive theories of gender development concerns developmental trajectories in the relative strength or rigidity of gender typing. To examine these trajectories in early childhood, 229 children (African American, Mexican, Dominican) were followed annually from age 3 to 5 and gender-stereotypical appearance, dress-up play, toy play, and sex segregation were examined. High gender-typing was found across ethnic group, and most behaviors increased in rigidity, especially from age 3 to 4. In addressing controversy surrounding the stability and structure of gender-typing it was found that from year to year, most behaviors showed moderately stable individual differences. Behaviors were uncorrelated within age, but showed more concordance in change across time, suggesting that aspects of gender-typing are multidimensional but still show coherence. PMID:23432471

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Ge-intercalated graphene: The origin of the p-type to n-type transition

KAUST Repository

Kaloni, Thaneshwor P.; Kahaly, M. Upadhyay; Cheng, Yingchun; Schwingenschlö gl, Udo

2012-01-01

deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition

Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

Directory of Open Access Journals (Sweden)

Xiong Gong

2010-07-01

Full Text Available Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

Race/Ethnicity and gender differences in health intentions and behaviors regarding exercise and diet for adults with type 2 diabetes: A cross-sectional analysis

Directory of Open Access Journals (Sweden)

Fox Kathleen M

2011-07-01

Full Text Available Abstract Background Self-management is the cornerstone of diabetes control and prevention of complications; however, it is undetermined whether differences in intention to adopt healthy lifestyles and actual healthy behavior exist across race/ethnic groups. This study evaluated the differences across racial-ethnic groups in self-reported medical advice received and health intentions and behaviors among adults with type 2 diabetes mellitus. Methods A cross-sectional analysis of the 2007 SHIELD US survey ascertained self-reported health intentions and behaviors for regular exercise, diet, and weight management among Non-Hispanic Caucasian (n = 2526, Non-Hispanic African-American (n = 706, and Hispanic (n = 179 respondents with type 2 diabetes. Results A similar proportion of respondents from each race-gender group (43%-56% reported receiving healthcare advice to increase their exercise (P = 0.32. Significantly more minorities reported an intention to follow the exercise recommendation compared with Non-Hispanic Caucasians (P = 0.03. More Non-Hispanic African-American (29% and Hispanic (27% men reported exercising regularly compared with other race-gender groups (P = 0.02. Significantly more Non-Hispanic Caucasian women (74% and Hispanic women (79% reported trying to lose weight compared with other groups (P Conclusions Differences in health intentions and healthy behaviors were noted across race-gender groups. More Non-Hispanic African-American men reported an intention to follow advice on exercising and self-report of exercising regularly was also higher compared with other race-gender groups. More Hispanic men reported high physical activity levels than other groups. Despite an increased willingness to follow healthcare recommendations for diet, >50% of respondents were obese among all race-gender groups.

Change in the electrical conductivity of SnO{sub 2} crystal from n-type to p-type conductivity

Energy Technology Data Exchange (ETDEWEB)

Villamagua, Luis, E-mail: luis.villamagua@tyndall.ie [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy); Stashans, Arvids [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi [Department of Chemical and Materials Engineering, National Central University, Jhong-Li, Taiwan (China); Carini, Manuela [Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy)

2015-05-01

Highlights: • Switch from n-type to p-type conductivity in SnO{sub 2} has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO{sub 2} compound shows stable p-type conductivity. • Low resistivity (3.657 × 10{sup −1} Ω cm) has been obtained. • High carrier concentration (4.858 × 10{sup 19} cm{sup −3}) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO{sub 2} systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO{sub 2} material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling.

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

Science.gov (United States)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

Meso-/Nanoporous Semiconducting Metal Oxides for Gas Sensor Applications

Directory of Open Access Journals (Sweden)

Nguyen Duc Hoa

2015-01-01

Full Text Available Development and/or design of new materials and/or structures for effective gas sensor applications with fast response and high sensitivity, selectivity, and stability are very important issues in the gas sensor technology. This critical review introduces our recent progress in the development of meso-/nanoporous semiconducting metal oxides and their applications to gas sensors. First, the basic concepts of resistive gas sensors and the recent synthesis of meso-/nanoporous metal oxides for gas sensor applications are introduced. The advantages of meso-/nanoporous metal oxides are also presented, taking into account the crystallinity and ordered/disordered porous structures. Second, the synthesis methods of meso-/nanoporous metal oxides including the soft-template, hard-template, and temple-free methods are introduced, in which the advantages and disadvantages of each synthetic method are figured out. Third, the applications of meso-/nanoporous metal oxides as gas sensors are presented. The gas nanosensors are designed based on meso-/nanoporous metal oxides for effective detection of toxic gases. The sensitivity, selectivity, and stability of the meso-/nanoporous gas nanosensors are also discussed. Finally, some conclusions and an outlook are presented.

Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Hughes, Steven Michael [Univ. of California, Berkeley, CA (United States)

2007-01-01

The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

Directory of Open Access Journals (Sweden)

Goyal Prabal

2016-01-01

Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

Multifunctional uranyl hybrid materials: structural diversities as a function of pH, luminescence with potential nitrobenzene sensing, and photoelectric behavior as p-type semiconductors.

Science.gov (United States)

Song, Jian; Gao, Xue; Wang, Zhi-Nan; Li, Cheng-Ren; Xu, Qi; Bai, Feng-Ying; Shi, Zhong-Feng; Xing, Yong-Heng

2015-09-21

A series of uranyl-organic frameworks (UOFs), {[(UO2)2(H2TTHA)(H2O)]·4,4'-bipy·2H2O}n (1), {[(UO2)3(TTHA)(H2O)3]}n (2), and {[(UO2)5(TTHA) (HTTHA)(H2O)3]·H3O}n (3), have been obtained by the hydrothermal reaction of uranyl acetate with a flexible hexapodal ligand (1,3,5-triazine-2,4,6-triamine hexaacetic acid, H6TTHA). These compounds exhibited three distinct 3D self-assembly architectures as a function of pH by single-crystal structural analysis, although the used ligand was the same in each reaction. Surprisingly, all of the coordination modes of the H6TTHA ligand in this work are first discovered. Furthermore, the photoluminescent results showed that these compounds displayed high-sensitivity luminescent sensing functions for nitrobenzene. Additionally, the surface photovoltage spectroscopy and electric-field-induced surface photovoltage spectroscopy showed that compounds 1-3 could behave as p-type semiconductors.

Effects of two types and two genre of music on social behavior in captive chimpanzees (Pan troglodytes).

Science.gov (United States)

Videan, Elaine N; Fritz, Jo; Howell, Sue; Murphy, James

2007-01-01

Is music just noise, and thus potentially harmful to laboratory animals, or can it have a beneficial effect? Research addressing this question has generated mixed results, perhaps because of the different types and styles of music used across various studies. The purpose of this study was to test the effects of 2 different types (vocal versus instrumental) and 2 genres (classical vocal versus 'easy-listening' vocal) of music on social behavior in 31 female and 26 male chimpanzees (Pan troglodytes). Results indicated that instrumental music was more effective at increasing affiliative behavior in both male and female chimpanzees, whereas vocal music was more effective at decreasing agonistic behavior. A comparison of 2 genre of vocal music indicated that easy-listening (slower tempo) vocal music was more effective at decreasing agonistic behavior in male chimpanzees than classical (faster tempo) vocal music. Agonistic behavior in females remained low (music. These results indicate that, like humans, captive chimpanzees react differently to various types and genres of music. The reactions varied depending on both the sex of the subject and the type of social behavior examined. Management programs should consider both type and genre when implementing a musical enrichment program for nonhuman primates.

Effectiveness of the Triple P Positive Parenting Program on behavioral problems in children: a meta-analysis.

Science.gov (United States)

de Graaf, Ireen; Speetjens, Paula; Smit, Filip; de Wolff, Marianne; Tavecchio, Louis

2008-09-01

The Triple P Positive Parenting Program is a multilevel parenting program to prevent and offer treatment for severe behavioral, emotional, and developmental problems in children. The aim of this meta-analysis is to assess the effectiveness of Triple P Level 4 interventions in the management of behavioral problems in children by pooling the evidence from relevant literature that included Level 4 Triple P interventions. Level 4 intervention is indicated if the child has multiple behavior problems in a variety of settings and there are clear deficits in parenting skills. Results indicate that Level 4 of Triple P interventions reduced disruptive behaviors in children. These improvements were maintained well over time, with further improvements in long-term follow-up. These effects support the widespread adoption and implementation of Triple P that is taking place in an increasing number of countries in quite diverse cultural contexts around the world.

Solidification characteristics and segregation behavior of a P-containing Ni-Fe-Cr-based alloy

Science.gov (United States)

Wang, Changshuai; Su, Haijun; Guo, YongAn; Guo, Jianting; Zhou, Lanzhang

2017-09-01

Solidification characteristics and segregation behavior of a P-containing Ni-Fe-Cr-based alloy, considered as boiler and turbine materials in 700 °C advanced ultra-supercritical coal-fired power plants, have been investigated by differential thermal analysis and directional solidification quenching technique. Results reveal that P decreases the solidus temperature, but only has negligible influence on liquidus temperature. After P was added, the solidification sequence has no apparent change, but the width of the mushy zone increases and dendritic structures become coarser. Moreover, P increases the amount and changes the morphology of MC carbide. Energy-dispersive spectroscopy analysis reveals that P has obvious influence on the segregation behavior of the constitute elements with equilibrium partition coefficients (ki) far away from unity, whereas has negligible effect on the constituent elements with ki close to unity and has more influence on the final stage of solidification than at early stage. The distribution profiles reveal that P atoms pile up ahead of the solid/liquid (S/L) interface and strongly segregate to the interdendritic liquid region. The influence of P on solidification characteristics and segregation behavior of Ni-Fe-Cr-based alloy could be attributed to the accumulation of P ahead of the S/L interface during solidification.

The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

Directory of Open Access Journals (Sweden)

A. Tombak

2015-01-01

Full Text Available In the current paper, the physical properties and microelectronic parameters of direct current (DC sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

I Should but I Can't: Controlled Motivation and Self-Efficacy Are Related to Disordered Eating Behaviors in Adolescents With Type 1 Diabetes.

Science.gov (United States)

Eisenberg, Miriam H; Lipsky, Leah M; Dempster, Katherine W; Liu, Aiyi; Nansel, Tonja R

2016-11-01

Among adolescents with type 1 diabetes, disordered eating behaviors (DEBs) are more prevalent and have more serious health implications than in adolescents without diabetes, necessitating identification of modifiable correlates of DEB in this population. This study hypothesized that (1) autonomous motivation and (2) controlled motivation for healthy eating (i.e., eating healthfully because it is important to oneself vs. important to others, respectively) are associated with DEB among adolescents with type 1 diabetes. The third hypothesis was that baseline healthy eating self-efficacy moderates these associations. Adolescents with type 1 diabetes (n = 90; 13-16 years) participating in a behavioral nutrition intervention efficacy trial reported DEB, controlled and autonomous motivation, and self-efficacy at baseline, 6, 12, and 18 months. Linear-mixed models estimated associations of controlled and autonomous motivation with DEB, adjusting for treatment group, body mass index, socioeconomic status, age, and gender. Separate models investigated the interaction of self-efficacy with each motivation type. Controlled motivation was positively associated with DEB (B = 2.18 ± .33, p motivation was not associated with DEB (B = -.70 ± .43, p = .11). Findings identify controlled motivation for healthy eating as a novel correlate of DEB among adolescents with type 1 diabetes and show that self-efficacy can modify this association. Motivation and self-efficacy for healthy eating represent potential intervention targets to reduce DEB in adolescents with type 1 diabetes. Published by Elsevier Inc.

Optical properties of Mg doped p-type GaN nanowires

Science.gov (United States)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

On the feasibility of p-type Ga2O3

Science.gov (United States)

Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico

2018-01-01

We investigate the various cation substitutional dopants in Ga2O3 for the possibility of p-type conductivity using density functional theory. Our calculations include both standard density functional theory and hybrid functional calculations. We demonstrate that all the investigated dopants result in deep acceptor levels, not able to contribute to the p-type conductivity of Ga2O3. In light of these results, we compare our findings with other wide bandgap oxides and reexamine previous experiments on zinc doping in Ga2O3.

Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

Science.gov (United States)

Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

2016-03-01

We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

Low temperature transport in p-doped InAs nanowires

DEFF Research Database (Denmark)

Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal

2013-01-01

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

Structure and phase transformation behavior of electroless Ni-P alloys containing tin and tungsten

International Nuclear Information System (INIS)

Balaraju, J.N.; Jahan, S. Millath; Jain, Anjana; Rajam, K.S.

2007-01-01

Autocatalytic ternary Ni-Sn-P, Ni-W-P and quaternary Ni-W-Sn-P films were prepared using alkaline citrate-based baths and compared with binary Ni-P coatings. Energy dispersive analysis of X-ray (EDAX) showed that binary Ni-P deposit contained 11.3 wt.% of phosphorus. Codeposition of tungsten in Ni-P matrix resulted in ternary Ni-W-P with 5 wt.% P and 7.8 wt.% of tungsten. Incorporation of tin led to ternary Ni-Sn-P deposit containing 0.4 wt.% Sn and 10.3 wt.% P. Presence of both sodium tungstate and sodium stannate in the basic bath had resulted in quaternary coating with 6.9 wt.% W, traces of Sn and 6.4 wt.% P. X-ray diffraction patterns of all the deposits revealed a single, broad peak which showed the nanocrystalline nature of the deposits. For the first time in related literature, the presence of a metastable phase Ni 12 P 5 in ternary deposits is reported in the present study. Metallographic cross-sections of all the deposits revealed the banded/lamellar structure. Scanning electron microscopy (SEM) studies of the deposits showed smooth nodules for ternary deposits, but coarse and well-defined nodules for quaternary deposits. DSC studies of phase transformation behavior of the ternary Ni-Sn-P deposit revealed a single sharp exothermic peak at 365 o C. However, ternary Ni-W-P and quaternary Ni-W-Sn-P deposits exhibited a low temperature peak at 300 o C, a split type high temperature peak at 405 and 440 o C and a very high temperature peak at 550 o C. Higher activation energy values were obtained for W-based alloy deposits. Presence of W and Sn has helped to retain high microhardness values even at higher temperatures indicating an improved thermal stability

Time perspective and weight management behaviors in newly diagnosed Type 2 diabetes: a mediational analysis.

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Hall, Peter A; Fong, Geoffrey T; Cheng, Alice Y

2012-12-01

The primary objective of the current study was to examine the extent to which domain-specific time perspective predicts weight management behaviors (dietary behavior and physical activity) among those newly diagnosed with Type 2 diabetes. A secondary objective was to test potential mediators of the hypothesized effect (behavioral intention, self-efficacy and control beliefs). A total of 204 adults newly diagnosed (≤6 months) with Type 2 diabetes participated in the study, which included a baseline assessment of domain-general and domain-specific time perspective, as well as strength of intention to perform two weight-management behaviors (dietary choice and physical activity); both weight-management behaviors were assessed again at 6 month follow-up. Hierarchical multiple regression analyses revealed a prospective association between domain-specific time perspective and uptake of weight management behaviors. Individuals with newly diagnosed T2DM possessing a future-oriented time perspective reported making less frequent fatty food choices and greater increases in physical activity over the 6-month follow-up interval. These effects were selectively mediated by intention strength, and not competing social cognitive variables. For both behaviors, the total effects and meditational models were robust to adjustments for demographics, body composition and disease variables. A future-oriented time perspective is prospectively associated with superior uptake of weight management behaviors among those with newly diagnosed Type 2 diabetes. The facilitating effect of future-oriented thinking appears to occur via enhanced strength of intentions to perform weight management behaviors.

PREFACE: 17th International Conference on Microscopy of Semiconducting Materials 2011

Science.gov (United States)

Walther, T.; Midgley, P. A.

2011-11-01

This volume contains invited and contributed papers from the 17th international conference on 'Microscopy of Semiconducting Materials' held at Churchill College, University of Cambridge, on 4-7 April 2011. The meeting was organised under the auspices of the Institute of Physics and supported by the Royal Microscopical Society as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution. This time the meeting was attended by 131 delegates from 25 countries world-wide, a record in terms of internationality. As semiconductor devices shrink further new routes of device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, the electronic structure, the chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two examples of topics at this meeting that have attracted a number of interesting studies were: the correlation of microstructural, optical and chemical information at atomic resolution with nanometre-scale resolved maps of the local electrical fields in (In,Al)GaN based semiconductors and tomographic approaches to characterise ensembles of nanowires and stacks of processed layers in devices Figure 1 Figure 1. Opening lecture by Professor Sir Colin J Humphreys. Each manuscript submitted for publication in this proceedings volume has been independently reviewed and revised

Significant effect of surfactant micelles on pH dependent fluorescent off-on-off behavior of Salicylaldehyde-2,4-Dinitrophenylhydrazone

Energy Technology Data Exchange (ETDEWEB)

Goswami, Priyanka [Department of Chemistry, Gauhati University, Guwahati 781 014 (India); Das, Diganta K., E-mail: digkdas@yahoo.co [Department of Chemistry, Gauhati University, Guwahati 781 014 (India)

2011-04-15

The fluorescence response to pH of 2,4 dinitrophenolhydrazone in 1:1 CH{sub 3}OH:H{sub 2}O and micellar mediums-negatively charged sodium dodecylsulphate (SDS), positively charged cetyltrimethyl ammonium bromide (CTAB) and neutral Triton X-100 (TX-100), is reported. At pH 4.0 the fluorescence of the molecule can be switched 'on' by selecting CTAB as the solvent. At pH 6.0 if the medium is TX-100 the fluorescence is 'off', but remains 'on' for the other three solvents. At pH 8.0, fluorescence is 'on' in the solvents except CTAB. SDS and TX-100 switch the fluorescence 'on' at pH 13.0 but for the other two solvents the fluorescence is 'off'. - Research highlights: The fluorescence response to pH of Salicylaldehyde-2,4 Dinitrophenolhydrazone in 1:1 CH{sub 3}OH:H{sub 2}O and in positively charged cetyltrimethyl ammonium bromide (CTAB) micellar medium shows 'off-on-off' behavior. In negatively charged sodium dodecylsulphate (SDS) the response of fluorescence of Salicylaldehyde-2,4 Dinitrophenolhydrazone to pH is 'off-on-on' type while in neutral Triton X-100 it is 'off-on-1/2on' type. At a given pH, fluorescence of 2,4 dinitrophenolhydrazone can be made 'on' or 'off' by selecting an appropriate pH.

Spin quenching assisted by a strongly anisotropic compression behavior in MnP

Energy Technology Data Exchange (ETDEWEB)

Han, Fei; Wang, Di; Wang, Yonggang; Li, Nana; Bao, Jin-Ke; Li, Bing; Botana, Antia S.; Xiao, Yuming; Chow, Paul; Chung, Duck Young; Chen, Jiuhua; Wan, Xiangang; Kanatzidis, Mercouri G.; Yang, Wenge; Mao, Ho-Kwang

2018-02-01

We studied the crystal structure and spin state of MnP under high pressure with synchrotron X-ray diffraction and X-ray emission spectroscopy. MnP has an exceedingly strong anisotropy in compressibility, with the primary compressible direction along the b axis of the Pnma structure. X-ray emission spectroscopy reveals a pressure-driven quenching of the spin state in MnP. First-principles calculations suggest that the strongly anisotropic compression behavior significantly enhances the dispersion of the Mn d-orbitals and the splitting of the d-orbital levels compared to the hypothetical isotropic compression behavior. Thus, we propose spin quenching results mainly from the significant enhancement of the itinerancy of d electrons and partly from spin rearrangement occurring in the split d-orbital levels near the Fermi level. This explains the fast suppression of magnetic ordering in MnP under high pressure. The spin quenching lags behind the occurrence of superconductivity at ~8 GPa implying that spin fluctuations govern the electron pairing for superconductivity.