WorldWideScience

Sample records for p-type ohmic contacts

  1. Ohmic Contacts to P-Type SiC

    National Research Council Canada - National Science Library

    Crofton, John

    2000-01-01

    Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

  2. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  3. W and WSix Ohmic contacts on p- and n-type GaN

    International Nuclear Information System (INIS)

    Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

    1999-01-01

    W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

  4. Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

    2015-01-14

    Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

  5. Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.k [Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Yi, Min-Su [Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711 (Korea, Republic of); Lee, Sung-Nam [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736 (Korea, Republic of)

    2009-05-29

    The electrical, structural, and optical characteristics of Ag/ZnO-doped In{sub 2}O{sub 3} (IZO) ohmic contacts to p-type GaN:Mg (2.5 x 10{sup 17} cm{sup -3}) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 {sup o}C annealed samples showed rectifying behavior, the 500 and 600 {sup o}C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 {sup o}C for 3 min in a vacuum ({approx} 10{sup -3} Torr) resulted in the lowest specific contact resistivity of 1.8 x 10{sup -4} {Omega}.cm{sup 2} and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts.

  6. Laser-annealed GaP OHMIC contacts for high-temperature devices

    International Nuclear Information System (INIS)

    Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

    1980-01-01

    The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

  7. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  8. Silver antimony Ohmic contacts to moderately doped n-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-21

    A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

  9. A new method of making ohmic contacts to p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

    2016-12-01

    Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

  10. Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

    Science.gov (United States)

    Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

    2014-11-01

    Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

  11. Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

    Science.gov (United States)

    Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

    2017-07-01

    Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

  12. Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

    Science.gov (United States)

    Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

    2004-05-01

    In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

  13. Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

    Science.gov (United States)

    Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

    2017-10-01

    In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

  14. Graphene in ohmic contact for both n-GaN and p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  15. Low resistance and transparent Ag/AZO ohmic contact to p-GaN

    International Nuclear Information System (INIS)

    Han, T.; Wang, T.; Gan, X. W.; Wu, H.; Shi, Y.; Liu, C.

    2014-01-01

    Silver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electron beam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out to determine the characteristic of the contacts. The Ag/AZO films annealed at 600 .deg. C were found to present an ohmic contact behavior. The specific contact resistance was calculated to be 9.76 x 10 -4 Ωcm 2 and the transmittance was over 80% for visibly light. The atomic force microscope was used to measure the aggregation of Ag grains which may have been the main factor in the formation of the Ag/AZO ohmic contact to p-GaN.

  16. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    International Nuclear Information System (INIS)

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  17. Mechanisms of current flow in metal-semiconductor ohmic contacts

    International Nuclear Information System (INIS)

    Blank, T. V.; Gol'dberg, Yu. A.

    2007-01-01

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

  18. Ohmic contacts to InN-based materials

    Directory of Open Access Journals (Sweden)

    Sai P. O.

    2016-10-01

    Full Text Available The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered.

  19. Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Jeong-Hun; Jung, Hyun-Wook [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-14

    In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current.

  20. Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

    International Nuclear Information System (INIS)

    He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

    2015-01-01

    We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

  1. Ti/Al Ohmic Contacts to n-Type GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Gangfeng Ye

    2011-01-01

    Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

  2. Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1993-01-01

    process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

  3. Ohmic contacts to semiconducting diamond

    Science.gov (United States)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  4. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  5. Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

    Science.gov (United States)

    Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

    2017-08-23

    We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

  6. Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

    Science.gov (United States)

    Khanna, Rohit

    In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

  7. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

    2015-10-21

    This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

  8. Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

    Science.gov (United States)

    Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

    2017-06-01

    Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

  9. Pentacene ohmic contact on the transparent conductive oxide films

    International Nuclear Information System (INIS)

    Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

    2010-01-01

    Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

  10. Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

    International Nuclear Information System (INIS)

    Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

    2006-01-01

    The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

  11. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    Science.gov (United States)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  12. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

    International Nuclear Information System (INIS)

    Liu, Bingbing; Qin, Fuwen; Wang, Dejun

    2015-01-01

    Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

  13. Flexible carbon-based ohmic contacts for organic transistors

    Science.gov (United States)

    Brandon, Erik (Inventor)

    2007-01-01

    The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

  14. Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

    DEFF Research Database (Denmark)

    Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

    2018-01-01

    Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

  15. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

    Directory of Open Access Journals (Sweden)

    Patrick H. Carey IV

    2017-09-01

    Full Text Available AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

  16. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

    Science.gov (United States)

    Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

    2017-09-01

    AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

  17. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  18. Contact metallurgy optimization for ohmic contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

    1991-01-01

    AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

  19. Metal Contacts to Gallium Arsenide.

    Science.gov (United States)

    Ren, Fan

    1991-07-01

    While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

  20. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

    2016-01-01

    An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

  1. Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

    Science.gov (United States)

    Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

    2017-12-01

    This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

  2. Study of araldite in edge protection of n-type and p-type surface barrier detectors

    International Nuclear Information System (INIS)

    Alencar, M.A.V.; Jesus, E.F.O.; Lopes, R.T.

    1995-01-01

    The aim of this work is the realization of a comparative study between the surface barrier detectors performance n and type using the epoxy resin Araldite as edge protection material with the purpose of determining which type of detector (n or p) the use of Araldite is more indicated. The surface barrier detectors were constructed using n and p type silicon wafer with resistivity of 3350Ω.cm and 5850 Ω.cm respectively. In the n type detectors, the metals used as ohmic and rectifier contacts were the Al and Au respectively, while in the p type detectors, the ohmic and rectifier contacts were Au and Al. All metallic contacts were done by evaporation in high vacuum (∼10 -4 Torr) and with deposit of 40 μm/cm 2 . The obtained results for the detectors (reverse current of -350nA and resolution from 21 to 26 keV for p type detectors and reserve current of 1μA and resolution from 44 to 49 keV for n type detectors) tend to demonstrate that use of epoxy resin Araldite in the edge protection is more indicated to p type surface barrier detectors. (author). 3 refs., 4 figs., 1 tab

  3. Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires

    International Nuclear Information System (INIS)

    Blanchard, Paul; Bertness, Kris A; Harvey, Todd; Sanford, Norman

    2014-01-01

    Contact resistivity ρ c is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nanowires (NWs), measuring ρ c of contacts to NWs can be particularly challenging. In this work, Si-doped n-GaN NWs were grown by molecular beam epitaxy. Four-contact structures with 20 nm Ti/200 nm Al contacts were fabricated on individual NWs by photolithography, and the contacts were annealed to achieve ohmic behavior. Two-point resistances R 23  and four-point collinear resistances R 23collinear  were measured between the middle two contacts on each NW. These resistances were then modeled by taking into account the non-uniform distribution of current flow along the length of each contact. Contrary to the assumption that the resistance difference R 23 −R 23collinear  is equal to the total contact resistance R c , the distributed-current-flow contact model shows that R 23 −R 23collinear  ≪ R c when ρ c is sufficiently small. Indeed, the measured R 23 −R 23collinear  was so small in these devices that it was within the measurement uncertainty, meaning that it was not possible to directly calculate ρ c from these data. However, it was possible to calculate an upper bound on ρ c for each device based on the largest possible value of R 23 −R 23collinear . In addition, we took into account the large uncertainties in the NW transport properties by numerically maximizing ρ c with respect to the uncertainty range of each measured and assumed parameter in the contact model. The resulting upper limits on ρ c ranged from 4.2 × 10 −6  to 7.6 × 10 −6  Ω cm 2 , indicating that 20 nm Ti/200 nm Al is a good choice of ohmic contact for moderately-doped n-GaN NWs. The measurement and numerical analysis demonstrated here offer a general approach to modeling ohmic contact resistivity via NW four

  4. Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rass, Jens; Ploch, Simon; Vogt, Patrick [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Wernicke, Tim; Redaelli, Luca; Einfeldt, Sven [Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

    2009-07-01

    Group-III-Nitride heterostructures grown on nonpolar and semipolar planes allow the realization of highly efficient devices such as laser diodes and LEDs due to the reduction or elimination of the quantum confined Stark effect. However, the realization of these devices poses a number of challenges, in particular the formation of smooth laser facets and the fabrication of ohmic contacts. In this talk optimized schemes for facet formation and contact resistance reduction for nitride based devices on non- and semipolar planes are presented, and various concepts are discussed. We discuss a laser scribing process that allows the cleaving of facets along the c- and a-plane for devices grown on nonpolar substrates. For semipolar planes there is no low-index cleavage plane in order to form resonators along the projection of the c-axis. Therefore we have investigated etching techniques in order to produce flat facets perpendicular to the plane of growth. For the challenging formation of p-type contacts to GaN we discuss different methods such as chemical treatments, different metallization schemes and capping layers to reduce the contact resistivity.

  5. Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2018-03-01

    Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

  6. Au/Zn Contacts to rho-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

    Science.gov (United States)

    Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

    1994-01-01

    The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

  7. Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN

    International Nuclear Information System (INIS)

    Cao, X. A.; Piao, H.; LeBoeuf, S. F.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2006-01-01

    The effects of surface treatment using Cl 2 /BCl 3 and Ar inductive coupled plasmas on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-type Al x Ga 1-x N (x=0-0.5) were investigated. Plasma treatment significantly increased the surface conductivity of GaN and Al 0.1 Ga 0.9 N, leading to improved Ohmic behaviors of the contacts. However, it reduced the surface doping level in Al x Ga 1-x N (x≥0.3) and degraded the contact properties. Following a 900-1000 deg. C anneal, the Ti/Al/Ti/Au contacts to Al x Ga 1-x N (x=0-0.3) became truly Ohmic, with specific contact resistances of (3-7)x10 -5 Ω cm 2 , whereas the contact to Al 0.5 Ga 0.5 N remained rectifying even without the plasma treatment. X-ray photoelectron spectroscopy measurements confirmed that the Fermi level moved toward the conduction band in GaN after the plasma treatment, but it was pinned by plasma-induced deep-level states in Al 0.5 Ga 0.5 N. This study emphasizes the need to mitigate plasma damage introduced during the mesa etch step for AlGaN-based deep-UV emitters and detectors

  8. Characterization of recessed Ohmic contacts to AlGaN/GaN

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2015-01-01

    In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to

  9. Low ohmic multilayer contacts in lead-tin-telluride diode lasers

    International Nuclear Information System (INIS)

    Herrmann, K.; Sumpf, B.; Boehme, D.; Hannemann, M.

    1983-01-01

    The preparation and the influence of low ohmic multilayer thin film contacts of lead-salt homo- and heterolasers on the degradation of lasing parameters during recycling processes between low working temperatures and room temperatures storage are described and discussed in detail. (author)

  10. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  11. Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

    International Nuclear Information System (INIS)

    Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

    2013-01-01

    Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

  12. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  13. The role of titanium aluminide in n-gallium nitride ohmic contact technology

    Science.gov (United States)

    Pelto, Christopher M.

    Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

  14. Method of separate determination of high-ohmic sample resistance and contact resistance

    Directory of Open Access Journals (Sweden)

    Vadim A. Golubiatnikov

    2015-09-01

    Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

  15. Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

    Directory of Open Access Journals (Sweden)

    Wojciech Macherzynski

    2016-01-01

    Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

  16. Al and Cu Implantation into Silicon Substrate for Ohmic Contact in Solar Cell Fabrication

    International Nuclear Information System (INIS)

    Sri Sulamdari; Sudjatmoko; Wirjoadi; Yunanto; Bambang Siswanto

    2002-01-01

    Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm 2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 10 13 ion/cm 2 - 10 16 ion/cm 2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 o C - 850 o C. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρ s for N type was 1.30 x 10 8 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and annealing temperature 500 o C. While for P type, the ρ s was 1.13 x 10 2 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and energy 40 keV, and annealing temperature 500 o C. (author)

  17. Metallization systems for stable ohmic contacts to GaAs

    International Nuclear Information System (INIS)

    Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

    1986-01-01

    A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

  18. Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

    International Nuclear Information System (INIS)

    Gu, Wen; Wu, Xingyang; Song, Peng; Zhang, Jianhua

    2015-01-01

    Highlights: • The electrical properties of GZO/CuS x contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using Cu x S interlayers under different annealing temperatures. It is shown that the GZO/Cu x S contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10 −2 Ω cm 2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/Cu x S/p-GaN and Cu x S/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance

  19. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  20. Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

    Science.gov (United States)

    Radulescu, Fabian

    2000-12-01

    Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates

  1. Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

    NARCIS (Netherlands)

    Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

    2002-01-01

    We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

  2. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

    Science.gov (United States)

    Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

    2017-10-30

    We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

  3. Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Gronsky, R.; Washburn, J.; Newman, N.; Spicer, W.E.; Weber, E.R.

    1986-01-01

    We report here a systematic study which uses electrical device measurements and transmission electron microscopy (TEM) methods to investigate the electrical, morphological, and structural properties of Au/GaAs Schottky diodes. The electrical characteristics of Au diodes formed on atomically clean and air-exposed GaAs(110) surfaces are found to change from rectifying to Ohmic behavior after annealing above the Au--Ga eutectic temperature (360 0 C). This change is shown to be due to an Ohmic-like contact at the periphery of the device. TEM studies of these structures indicate that the Ohmic peripheral current pathway can be correlated with the formation of near surface Ga-rich Au crystallites at the diode circumference upon annealing. Further evidence of the correlation of the Ohmic electrical characteristics with the morphology of the periphery comes from data which indicate that the removal of these Au crystallites by mesa etching is also accompanied with the elimination of the Ohmic current. The morphology of the overlayer was found to depend strongly on annealing and surface treatment. TEM indicates that the interface is flat and abrupt for all unannealed diodes, as well as for annealed diodes formed on atomically clean surfaces. For annealed diodes formed on the air-exposed surfaces, the metal--semiconductor interface contains large metallic protrusions extending up to several hundred angstroms into the semiconductor. For comparison to practical structures, the morphology of annealed diodes formed using typical commercial processing technology [i.e., formed on chemically prepared (100) surfaces annealed in forming gas] was also investigated using TEM. The interface for these structures is more complex than interfaces formed on the atomically clean and air-exposed cleaved (110) surfaces

  4. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  5. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

    2017-01-01

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  6. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.

    2017-10-31

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  7. Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAs

    International Nuclear Information System (INIS)

    Nassibian, A.G.; Kalkur, T.S.; Sutherland, G.J.; Cohen, D.

    1985-01-01

    AuGe-Ni is widely used for the fabrication of ohmic contacts to n-GaAs. The alloying behaviour of evaporated AuGe-Ni alloyed by furnace and Scanning Electron Beam, is characterised by Rutherford backscattering with 2MeV 4 He ions. Since the formation of alloyed AuGe-Ni contacts involves redistribution and diffusion of Ga, As, Ni, Ge and Au, it is difficult to separate the corresponding yields due to gold, Ga As, Ni and Ge in the spectrum. The technique used in the investigation involves assumption of depth distribution of elements and computing the resultant spectrum

  8. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  9. Ohmic metallization technology for wide band-gap semiconductors

    International Nuclear Information System (INIS)

    Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

    2002-01-01

    Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

  10. Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

    2014-10-28

    Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

  11. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  12. Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

    Science.gov (United States)

    Makeev, M. O.; Meshkov, S. A.

    2017-07-01

    The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

  13. Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

    Science.gov (United States)

    Cui, Xu

    MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

  14. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  15. Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

    International Nuclear Information System (INIS)

    Hwang, J. D.; Lin, C. C.; Chen, W. L.

    2006-01-01

    A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

  16. Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A; Alves, L C; Corregidor, V; Vázquez, L; Romero, M F; Muñoz, E; Pantellini, A; Lanzieri, C

    2014-01-01

    The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAl x and AuAl x phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals. (paper)

  17. Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

    International Nuclear Information System (INIS)

    Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

    2012-01-01

    We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

  18. Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

    NARCIS (Netherlands)

    Farmanbar Gelepordsari, M.; Brocks, G.

    2016-01-01

    High contact resistances have blocked the progress of devices based on MX2 (M = Mo, W; X = S, Se, Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. It is shown that i) one can remove the

  19. Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning

    International Nuclear Information System (INIS)

    Ip, K.; Gila, B.P.; Onstine, A.H.; Lambers, E.S.; Heo, Y.W.; Baik, K.H.; Norton, D.P.; Pearton, S.J.; Kim, S.; LaRoche, J.R; Ren, F.

    2004-01-01

    UV-ozone cleaning prior to metal deposition of either e-beam Pt contacts or sputtered W contacts on n-type single-crystal ZnO is found to significantly improve their rectifying characteristics. Pt contacts deposited directly on the as-received ZnO surface are Ohmic but show rectifying behavior with ozone cleaning. The Schottky barrier height of these Pt contacts was 0.70 eV, with ideality factor of 1.5 and a saturation current density of 6.2x10 -6 A cm -2 . In contrast, the as-deposited W contacts are Ohmic, independent of the use of ozone cleaning. Postdeposition annealing at 700 deg. C produces rectifying behavior with Schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The improvement in rectifying properties of both the Pt and W contacts is related to removal of surface carbon contamination from the ZnO

  20. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Chung-Hua Chao

    2013-01-01

    Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

  1. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-01-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

  2. Ohmic Contacts for Technology for Frequency Agile Digitally Synthesized Transmitters

    National Research Council Canada - National Science Library

    Mohney, Suzanne E

    2007-01-01

    ... bipolar transistors to smaller sizes. For p-type InAs, the combination of modest contact resistance and good thermal stability at 250 0 C was achieved with metallizations that had thin Pd layers deposited first, fol lowed by W or Ti/Pt...

  3. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

    Science.gov (United States)

    Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

    1997-11-01

    Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

  4. AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

    International Nuclear Information System (INIS)

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2007-01-01

    Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

  5. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  6. Investigations of niobium carbide contact for carbon-nanotube-based devices

    International Nuclear Information System (INIS)

    Huang, L; Chor, E F; Wu, Y; Guo, Z

    2010-01-01

    Single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with Nb contacts have been fabricated and upon annealing in vacuum at 700 deg. C for 1 h, niobium carbide (Nb 2 C) is formed at the Nb/SWCNT interface. The Nb 2 C/SWCNT contacts demonstrate a very small Schottky barrier height of ∼ 18 meV (decreased by > 80% relative to that of pristine Nb/SWCNT contact of ∼ 98 meV) to p-type transport. This is attributed to the higher work function of Nb 2 C (∼5.2 eV) than Nb (∼4.3 eV) and better bonding between Nb 2 C and SWCNTs. The performance of Nb 2 C-contacted SWCNT FETs is as follows: the p-channel ON current is as high as 0.5 μA at V DS = 0.1 V, the I ON /I OFF ratio is up to ∼ 10 5 and the subthreshold slope is ∼ 550 mV/dec, which is as good as that of titanium carbide (TiC-) and Pd-contacted SWCNT FETs. Compared with TiC, Nb 2 C contacts yield more unipolar p-type SWCNT FETs, as a result of the Nb 2 Cs higher work function. More importantly, Nb 2 C contacts can form near-ohmic contacts to both large-(≥1.6 nm) and small-diameter (∼1 nm) SWCNTs, while Pd can only form near-ohmic contacts for large-diameter SWCNTs. Moreover, the Nb 2 C contacts demonstrate good stability in air.

  7. The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

    Science.gov (United States)

    Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

    2008-07-01

    It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

  8. Investigating the effect of silicon surface chemical treatment on Al/Si contact properties in GaP/Si solar cells

    Science.gov (United States)

    Kudryashov, D.; Gudovskikh, A.

    2018-03-01

    In the present work, experimental studies have been carried out to reveal how chemical treatment of a silicon surface affects the properties of the Al/Si contact. It has been shown that for p-type monocrystalline silicon substrates with a resistivity of 10 ohm cm, it is possible to form an ohmic Al/Si contact by magnetron sputtering of an aluminum thin film and its further annealing at temperatures of 400 - 450 °C. In the range of annealing temperatures of 250 - 400 °C, the Si substrate treatment in the HF solution leads to a significant increase in currents on the current-voltage curves of the Al/Si contact, while in the range of 450 - 700 °C, the effect of chemical treatment of the silicon is not detected.

  9. Remarks on the thermal stability of an Ohmic-heated nanowire

    Science.gov (United States)

    Timsit, Roland S.

    2018-05-01

    The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

  10. The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

    Science.gov (United States)

    Oh, Min-Suk

    2018-04-01

    We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

  11. Field-effect P-N junction

    Science.gov (United States)

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  12. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  13. Role of Ag-alloy in the thermal stability of Ag-based ohmic contact to GaN(0 0 0 1) surface

    International Nuclear Information System (INIS)

    Xiong, Zhihua; Qin, Zhenzhen; Zhao, Qian; Chen, Lanli

    2015-01-01

    First-principles calculations are performed to study Ag and Ag-alloy adsorption stability on GaN(0 0 0 1) surface. We find Ag only contact to GaN surface is unstable under high temperature. While Ag-alloy adsorption exhibits better adsorption stability and electronic properties than that of the Ag only contact,due to the enhanced interaction between Ag-alloy and GaN(0 0 0 1) surface. The Ag-alloy, particularly AgNi, is proposed to be used as very promising ohmic contact to GaN for practical applications

  14. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  15. P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

    Science.gov (United States)

    Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

    2017-10-01

    In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

  16. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

    2014-07-14

    β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

  17. Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures.

    Science.gov (United States)

    Zheng, Changxi; Zhang, Qianhui; Weber, Bent; Ilatikhameneh, Hesameddin; Chen, Fan; Sahasrabudhe, Harshad; Rahman, Rajib; Li, Shiqiang; Chen, Zhen; Hellerstedt, Jack; Zhang, Yupeng; Duan, Wen Hui; Bao, Qiaoliang; Fuhrer, Michael S

    2017-03-28

    Large-area two-dimensional (2D) heterojunctions are promising building blocks of 2D circuits. Understanding their intriguing electrostatics is pivotal but largely hindered by the lack of direct observations. Here graphene-WS 2 heterojunctions are prepared over large areas using a seedless ambient-pressure chemical vapor deposition technique. Kelvin probe force microscopy, photoluminescence spectroscopy, and scanning tunneling microscopy characterize the doping in graphene-WS 2 heterojunctions as-grown on sapphire and transferred to SiO 2 with and without thermal annealing. Both p-n and n-n junctions are observed, and a flat-band condition (zero Schottky barrier height) is found for lightly n-doped WS 2 , promising low-resistance ohmic contacts. This indicates a more favorable band alignment for graphene-WS 2 than has been predicted, likely explaining the low barriers observed in transport experiments on similar heterojunctions. Electrostatic modeling demonstrates that the large depletion width of the graphene-WS 2 junction reflects the electrostatics of the one-dimensional junction between two-dimensional materials.

  18. Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

    Science.gov (United States)

    Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

    2018-03-01

    The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

  19. Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

    Science.gov (United States)

    Hou, Minmin; Senesky, Debbie G.

    2014-08-01

    The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10-5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

  20. Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Carey, Patrick H. [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Yang, Jiancheng [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Ren, Fan [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Hays, David C. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Kuramata, Akito [Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.; Kravchenko, Ivan I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

    2017-10-03

    In this work, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10-5 Ω cm2 were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

  1. Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

    Science.gov (United States)

    Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

    2018-03-01

    Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

  2. Effects of nanoscale coatings on reliability of MEMS ohmic contact switches

    Science.gov (United States)

    Tremper, Amber Leigh

    also increases the dependence on force. This thesis also details that the relative contribution of contact resistance to the total measured resistance can be maximized by decreasing the probe spacing and tip radius. AFM testing of the layered systems showed that the coated samples had larger predicted plane strain moduli than the Au sample, in contrast to the nanoindentation testing. Thus, when the contact depth was kept sufficiently small, the contact stiffness increased as predicted by substrate models. When the contact depth was on the order of the coating thickness, the contact stiffness actually decreased. Additionally, the forceseparation plots showed that the Ru and Pt surfaces either accumulated large amounts of contamination or were less susceptible to being wiped clean than the Au film. Further, scratch testing of the Au film and Ru and Pt coatings show that the hard surface coatings reduce material removal and contact wear. Ultra-thin Ru and Pt surface coatings on Au films are shown to be improved material systems for ohmic contact switches. The wear is reduced for coated materials, while the resistance and power consumption through the coating are not significantly affected.

  3. Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

    Science.gov (United States)

    Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

    2018-04-01

    Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

  4. Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Ynsa, M.D.; Romero, M.F.; Alves, L.C.; Muñoz, E.

    2013-01-01

    The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing

  5. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  6. Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

    Science.gov (United States)

    Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

    2002-07-01

    We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

  7. A variational master equation approach to quantum dynamics with off-diagonal coupling in a sub-Ohmic environment

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ke-Wei [School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fujihashi, Yuta; Ishizaki, Akihito [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2016-05-28

    A master equation approach based on an optimized polaron transformation is adopted for dynamics simulation with simultaneous diagonal and off-diagonal spin-boson coupling. Two types of bath spectral density functions are considered, the Ohmic and the sub-Ohmic. The off-diagonal coupling leads asymptotically to a thermal equilibrium with a nonzero population difference P{sub z}(t → ∞) ≠ 0, which implies localization of the system, and it also plays a role in restraining coherent dynamics for the sub-Ohmic case. Since the new method can extend to the stronger coupling regime, we can investigate the coherent-incoherent transition in the sub-Ohmic environment. Relevant phase diagrams are obtained for different temperatures. It is found that the sub-Ohmic environment allows coherent dynamics at a higher temperature than the Ohmic environment.

  8. Thermal degradation of ohmic contacts on semipolar (11-22) GaN films grown on m-plane (1-100) sapphire substrates

    International Nuclear Information System (INIS)

    Kim, Doo Soo; Kim, Deuk Young; Seo, Yong Gon; Kim, Ji Hoon; Hwang, Sung Min; Baik, Kwang Hyeon

    2012-01-01

    Semipolar (11-22) GaN films were grown on m-plane (1-100) sapphire substrates by using metalorganic chemical vapor deposition. The line widths of the omega rocking curves of the semipolar GaN films were 498 arcsec along the [11-23] GaN direction and 908 arcsec along the [10-10] GaN direction. The properties of the Ti/Al/Ni/Au metal contact were investigated using transmission-line-method patterns oriented in both the [11-23] GaN and the [10-10] GaN directions of semipolar (11-22) GaN. The minimum specific contact resistance of ∼3.6 x 10 -4 Ω·cm -2 was obtained on as-deposited metal contacts. The Ohmic contact properties of semipolar (11-22) GaN became degraded with increasing annealing temperature above 400 .deg. C. The thermal degradation of the metal contacts may be attributed to the surface property of N-polarity on the semipolar (11-22) GaN films. Also, the semipolar (11-22) GaN films did not show clear anisotropic behavior of the electrical properties for different azimuthal angles.

  9. Neoclassical MHD equilibria with ohmic current

    International Nuclear Information System (INIS)

    Tokuda, Shinji; Takeda, Tatsuoki; Okamoto, Masao.

    1989-01-01

    MHD equilibria of tokamak plasmas with neoclassical current effects (neoclassical conductivity and bootstrap current) were calculated self-consistently. Neoclassical effects on JFT-2M tokamak plasmas, sustained by ohmic currents, were studied. Bootstrap currents flow little for L-mode type equilibria because of low attainable values of poloidal beta, β J . H-mode type equilibria give bootstrap currents of 30% ohmic currents for β J attained by JFT-2M and 100% for β J ≥ 1.5, both of which are sufficient to change the current profiles and the resultant MHD equilibria. Neoclassical conductivity which has roughly half value of the classical Spitzer conductivity brings peaked ohmic current profiles to yield low safety factor at the magnetic axis. Neoclassical conductivity reduces the value of effective Z(Z eff ) which is necessary to give the observed one-turn voltage but it needs impurities accumulating at the center when such peaked current profiles are not observed. (author)

  10. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  11. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    International Nuclear Information System (INIS)

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-01-01

    The electrical behaviour of graphene (Gr) contacts to Al x Ga 1−x N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al 0.25 Ga 0.75 N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ B  ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ B  ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ B ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN

  12. Zirconium mediated hydrogen outdiffusion from p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kaminska, E.; Piotrowska, A.; Barcz, A.; Jasinski, J.; Zielinski, M.; Golaszewska, K.; Davis, R.F.; Goldys, E.; Tomsia, K.

    2000-07-01

    The authors have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at {approximately}900 C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB{sub 2} metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

  13. Interfacial reactions between thin films of zinc and (100) InP

    International Nuclear Information System (INIS)

    Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

    1995-01-01

    The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

  14. Palladium silicide - a new contact for semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Totterdell, D.H.J.

    1981-11-01

    Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

  15. Ohmic cooking of whole beef muscle--evaluation of the impact of a novel rapid ohmic cooking method on product quality.

    Science.gov (United States)

    Zell, Markus; Lyng, James G; Cronin, Denis A; Morgan, Desmond J

    2010-10-01

    Cylindrical cores of beef semitendinosus (500g) were cooked in a combined ohmic/convection heating system to low (72 degrees C, LTLT) and high (95 degrees C, HTST) target end-point temperatures. A control was also cooked to an end-point temperature of 72 degrees C at the coldest point. Microbial challenge studies on a model meat matrix confirmed product safety. Hunter L-values showed that ohmically heated meat had significantly (pHTST)) relative to the control (56.85). No significant texture differences (p>/=0.05) were suggested by Warner-Bratzler peak load values (34.09, 36.37 vs. 35.19N). Cook loss was significantly (pHTST and the control were more comparable (6.09 and 7.71, respectively). These results demonstrate considerable potential for this application of ohmic heating for whole meats. Copyright (c) 2010 The American Meat Science Association. Published by Elsevier Ltd. All rights reserved.

  16. Coexistence and competition of surface diffusion and geometric shielding in the growth of 1D bismuth nanostructures and their ohmic contact

    International Nuclear Information System (INIS)

    Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Deng, Yangbao; Deng, Shuguang

    2014-01-01

    We study the physical-vapor-deposition of 1D bismuth nanostructures. Bi nanowire elongating along [012] and/or [110] direction as well as anisotropic Bi nano-columns are physical-vapor-deposited successfully. The coexistence and competition of surface diffusion and geometric shielding are critical to their formation as well as growth mode transition among them. Since physical-vapor-deposition is a vacuum process, we make use of it to fabricate the ohmic contact to prevent the damage to the bismuth nanostructures brought by the etching to their thick surface oxide layer. (paper)

  17. Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

    2017-11-01

    Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.

  18. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  19. Effect of electrode type in the resistive switching behaviour of TiO2 thin films

    International Nuclear Information System (INIS)

    Hernández-Rodríguez, E; Zapata-Torres, M; Márquez-Herrera, A; Zaleta-Alejandre, E; Meléndez-Lira, M; Cruz, W de la

    2013-01-01

    The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO 2 -based metal-oxide-metal devices (MOM) is studied. TiO 2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO 2 active layer, those where Ohmic-Ohmic, Ohmic-Schottky and Schottky-Schottky. The junction type was tested by electrical I-V measurements. It was found that MOM devices made with the Ohmic-Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic-Schottky and Schottky-Schottky combinations. From a detailed analysis of the I-V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole-Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.

  20. Current simulation of symmetric contacts on CdTe

    International Nuclear Information System (INIS)

    Ruzin, A.

    2011-01-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  1. Current simulation of symmetric contacts on CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2011-12-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  2. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

    International Nuclear Information System (INIS)

    Chen Fengping; Zhang Yuming; Lue Hongliang; Zhang Yimen; Guo Hui; Guo Xin

    2011-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. (semiconductor devices)

  3. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

    2016-12-01

    Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

  4. Effect of ohmic heating processing conditions on color stability of fungal pigments.

    Science.gov (United States)

    Aguilar-Machado, Diederich; Morales-Oyervides, Lourdes; Contreras-Esquivel, Juan C; Aguilar, Cristóbal; Méndez-Zavala, Alejandro; Raso, Javier; Montañez, Julio

    2017-06-01

    The aim of this work was to analyze the effect of ohmic heating processing conditions on the color stability of a red pigment extract produced by Penicillium purpurogenum GH2 suspended in a buffer solution (pH 6) and in a beverage model system (pH 4). Color stability of pigmented extract was evaluated in the range of 60-90 ℃. The degradation pattern of pigments was well described by the first-order (fractional conversion) and Bigelow model. Degradation rate constants ranged between 0.009 and 0.088 min -1 in systems evaluated. Significant differences in the rate constant values of the ohmic heating-treated samples in comparison with conventional thermal treatment suggested a possible effect of the oscillating electric field generated during ohmic heating. The thermodynamic analysis also indicated differences in the color degradation mechanism during ohmic heating specifically when the pigment was suspended in the beverage model system. In general, red pigments produced by P. purpurogenum GH2 presented good thermal stability under the range of the evaluated experimental conditions, showing potential future applications in pasteurized food matrices using ohmic heating treatment.

  5. Anatomy-performance correlation in Ti-based contact metallizations on AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Mohammed, Fitih M.; Wang, Liang; Koo, Hyung Joon; Adesida, Ilesanmi

    2007-01-01

    A comprehensive study of the electrical and surface microstructural characteristics of Ti/Au, Ti/Al/Au, Ti/Mo/Au, and Ti/Al/metal/Au schemes, where metal is Ir, Mo, Nb, Pt, Ni, Ta, and Ti, has been carried out to determine the role of constituent components of multilayer contact metallizations on Ohmic contact formation on AlGaN/GaN heterostructures. Attempts have been made to elucidate the anatomy (composition-structure) performance correlation in these schemes. Evidences have been obtained for the necessity of the Al and metal barrier layer as well as an optimal amount of Ti for achieving low-resistance Ohmic contact formation. A strong dependence of electrical properties and intermetallic interactions on the type of metal barrier layer used was found. Scanning electron microscopy characterization, coupled with energy dispersive x-ray spectroscopy, has shown evidence for alloy aggregation, metal layer fragmentation, Al-Au solid solution formation, and possible Au and/or Al reaction with metal layer. Results from the present study provide insights on the active and the necessary role various components of a multilayer contact metallization play for obtaining excellent Ohmic contact formation in the fabrication of AlGaN/GaN high electron mobility transistors

  6. An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

    Science.gov (United States)

    Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

    2018-04-01

    In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

  7. High performance MoS2 TFT using graphene contact first process

    Directory of Open Access Journals (Sweden)

    Chih-Shiang Chang Chien

    2017-08-01

    Full Text Available An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS. Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vgp-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.

  8. Combined use of a field-plate and narrow p-barriers for a wide-pitch ohmic-side readout of the BELLE double-sided SVD

    International Nuclear Information System (INIS)

    Ikeda, H.; Matsuda, T.

    1997-01-01

    We explored wide-pitch ohmic-side structures for the BELLE SVD, where we proposed a field-plate structure combined with narrow p-barriers in between the readout electrodes of 90, 113, 180, and 226 μm-pitch detectors. The effect of the p-barriers was studied with a numerical model to trace the carrier trajectories. The charge collection and sharing properties were examined in practice for prototype small-size detectors with an IR pulse shining from either the junction side or the ohmic side. The channel separation capabilities were also shown to be appropriate under nominal operation conditions. (orig.)

  9. Ohmic Heating: Concept and Applications-A Review.

    Science.gov (United States)

    Kaur, Nimratbir; Singh, A K

    2016-10-25

    Ohmic heating, also known as Joule heating, electrical resistance heating, and direct electrical resistance heating, is a process of heating the food by passing electric current. In ohmic heating the energy is dissipated directly into the food. Electrical conductivity is a key parameter in the design of an effective ohmic heater. A large number of potential applications exist for ohmic heating, including blanching, evaporation, dehydration, fermentation, sterilization, pasteurization, and heating of foods. Beyond heating, applied electric field under ohmic heating causes electroporation of cell membranes, which increase extraction rates, and reduce gelatinization temperature and enthalpy. Ohmic heating results in faster heating of food along with maintenance of color and nutritional value of food. Water absorption index, water solubility index, thermal properties, and pasting properties are altered with the application of ohmic heating. Ohmic heating results in pre-gelatinized starches, which reduce energy requirement during processing. But its higher initial cost, lack of its applications in foods containing fats and oils, and less awareness limit its use.

  10. Nutritional impact of ohmic heating on fruits and vegetables—A review

    Directory of Open Access Journals (Sweden)

    Ranvir Kaur

    2016-12-01

    Full Text Available Ohmic heating, also called electrical resistance heating, joule heating, or electro-conductive heating, is an advanced thermal food processing technique where heat is internally generated in a sample due to electrical resistance when electric current is passed through it. It is a novel technique which provides rapid and uniform heating, resulting in less thermal damage to the food product. According to the recent literature, plant products are most suitable and often used for ohmic heat processing. Beyond heating of fruits and vegetables, the applied electric field under ohmic heating causes various changes in quality and nutritional parameters which include inactivation of enzymes and micro-organisms, degradation of heat-sensitive compounds, changes in cell membranes, viscosity, pH, color, and rheology. Ohmic heating rate depends on the electrical field strength and electrical conductivity of product. This review focuses on various factors affecting the electrical conductivity of fruits and vegetables and the effect of ohmic heating on their quality and nutritional properties.

  11. Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

    Science.gov (United States)

    Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

    2017-10-01

    Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

  12. Three-dimensional stellarator equilibrium as an ohmic steady state

    International Nuclear Information System (INIS)

    Park, W.; Monticello, D.A.; Strauss, H.; Manickam, J.

    1985-07-01

    A stable three-dimensional stellarator equilibrium can be obtained numerically by a time-dependent relaxation method using small values of dissipation. The final state is an ohmic steady state which approaches an ohmic equilibrium in the limit of small dissipation coefficients. We describe a method to speed up the relaxation process and a method to implement the B vector . del p = 0 condition. These methods are applied to obtain three-dimensional heliac equilibria using the reduced heliac equations

  13. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

    2013-01-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  14. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  15. Energy confinement in Ohmic H-mode in TUMAN-3M

    International Nuclear Information System (INIS)

    Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Lebedev, S.V.; Levin, L.S.; Tukachinsky, A.S.

    1997-01-01

    The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. In 1994 new vacuum vessel had been installed in TUMAN-3 tokamak. The vessel has the same sizes as old one (R 0 =0.55 m, a 1 =0.24 m). New vessel was designed to reduce mechanical stresses in the walls during B T ramp phase of a shot. Therefore modified device - TUMAN-3M is able to produce higher B T and I p , up to 2 T and 0.2 MA respectively. During first experimental run device was operated in Ohmic Regime. In these experiments the possibility to achieve Ohmic H-mode was studied. The study of the parametric dependencies of the energy confinement time in both OH and Ohmic H-mode was performed. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Energy confinement time in TUMAN-3/TUMAN-3M Ohmic H-mode has revealed good agreement with JET/DIII-D/ASDEX scaling for ELM-free H-mode, resulting in very long τ E at the high plasma current discharges. (author)

  16. Alloyed Aluminum Contacts for Silicon Solar Cells

    International Nuclear Information System (INIS)

    Tin Tin Aye

    2010-12-01

    Aluminium is usually deposited and alloyed at the back of p-p silicon solar cell for making a good ohmic contact and establishing a back electric field which avoids carrier recombination of the back surface. It was the deposition of aluminum on multicrystalline silicon (mc-Si) substrate at various annealing temperature. Physical and elemental analysis was carried out by using scanning electron microscopy (SEM) and X-rays diffraction (XRD). The electrical (I-V) characteristic of the photovoltaic cell was also measured.

  17. Type conversion, contacts, and surface effects in electroplated CdTe films

    International Nuclear Information System (INIS)

    Basol, B.M.; Ou, S.S.; Stafsudd, O.M.

    1985-01-01

    Efficient electroplated CdS/CdTe solar cells can be fabricated by heat treating and type-converting the n-CdTe films deposited on CdS layers. In this paper, various mechanisms which may give rise to the conversion of electroplated CdTe films from n to p type are investigated. It is concluded that Cd-vacancy generation is the main mechanism of type conversion. Possible effects of oxygen on this mechanism are also discussed. Evaporated Au contacts to electroplated p-CdTe films were studied. It was found that the Au contacts depleted the excess Te present on the surface of Br 2 -methanol etched p-CdTe films. Oxygen was found to affect the electrical characteristics of such contacts

  18. Influence of infrared final cooking on polycyclic aromatic hydrocarbon formation in ohmically pre-cooked beef meatballs.

    Science.gov (United States)

    Kendirci, Perihan; Icier, Filiz; Kor, Gamze; Onogur, Tomris Altug

    2014-06-01

    Effects of infrared cooking on polycyclic aromatic hydrocarbon (PAH) formation in ohmically pre-cooked beef meatballs were investigated. Samples were pre-cooked in a specially designed-continuous type ohmic cooking at a voltage gradient of 15.26V/cm for 92s. Infrared cooking was applied as a final cooking method at different combinations of heat fluxes (3.706, 5.678, 8.475kW/m(2)), application distances (10.5, 13.5, 16.5cm) and application durations (4, 8, 12min). PAHs were analyzed by using high performance liquid chromatography (HPLC) equipped with a fluorescence detector. The total PAH levels were detected to be between 4.47 and 64μg/kg. Benzo[a] pyrene (B[a]P) and PAH4 (sum of B[a]P, chrysene (Chr), benzo[a]anthracene (B[a]A) and benzo[b]fluoranthene (B[b]F)) levels detected in meatballs were below the EC limits. Ohmic pre-cooking followed by infrared cooking may be regarded as a safe cooking procedure of meatballs from a PAH contamination point of view. Copyright © 2014 Elsevier Ltd. All rights reserved.

  19. Passivation of a Metal Contact with a Tunneling Layer

    DEFF Research Database (Denmark)

    Loozen, X.; Larsen, J.B.; Dross, F.

    2011-01-01

    The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion...... of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm Al...

  20. A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

    International Nuclear Information System (INIS)

    Basu, A; Adams, G G; McGruer, N E

    2016-01-01

    Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

  1. Low resistivity contacts to YBa2Cu3O(7-x) superconductors

    Science.gov (United States)

    Hsi, Chi-Shiung; Haertling, Gene H.

    1991-01-01

    Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

  2. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    Science.gov (United States)

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  3. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  4. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    Science.gov (United States)

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  5. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    International Nuclear Information System (INIS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W.; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-01-01

    Passivated contacts (poly-Si/SiO x /c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF 2 ), the ion implantation dose (5 × 10 14  cm −2 to 1 × 10 16  cm −2 ), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV oc ) of 725 and 720 mV, respectively. For p-type passivated contacts, BF 2 implantations into intrinsic a-Si yield well passivated contacts and allow for iV oc of 690 mV, whereas implanted B gives poor passivation with iV oc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V oc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF 2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V oc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

  6. Search for Pauli exclusion principle violating atomic transitions and electron decay with a p-type point contact germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Abgrall, N.; Bradley, A.W.; Chan, Y.D.; Mertens, S.; Poon, A.W.P. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arnquist, I.J.; Hoppe, E.W.; Kouzes, R.T.; LaFerriere, B.D.; Orrell, J.L. [Pacific Northwest National Laboratory, Richland, WA (United States); Avignone, F.T. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Barabash, A.S.; Konovalov, S.I.; Yumatov, V. [National Research Center ' ' Kurchatov Institute' ' Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bertrand, F.E.; Galindo-Uribarri, A.; Radford, D.C.; Varner, R.L.; White, B.R.; Yu, C.H. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Brudanin, V.; Shirchenko, M.; Vasilyev, S.; Yakushev, E.; Zhitnikov, I. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Busch, M. [Duke University, Department of Physics, Durham, NC (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Buuck, M.; Cuesta, C.; Detwiler, J.A.; Gruszko, J.; Guinn, I.S.; Leon, J.; Robertson, R.G.H. [University of Washington, Department of Physics, Center for Experimental Nuclear Physics and Astrophysics, Seattle, WA (United States); Caldwell, A.S.; Christofferson, C.D.; Dunagan, C.; Howard, S.; Suriano, A.M. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chu, P.H.; Elliott, S.R.; Goett, J.; Massarczyk, R.; Rielage, K. [Los Alamos National Laboratory, Los Alamos, NM (United States); Efremenko, Yu. [University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Ejiri, H. [Osaka University, Research Center for Nuclear Physics, Ibaraki, Osaka (Japan); Finnerty, P.S.; Gilliss, T.; Giovanetti, G.K.; Henning, R.; Howe, M.A.; MacMullin, J.; Meijer, S.J.; O' Shaughnessy, C.; Rager, J.; Shanks, B.; Trimble, J.E.; Vorren, K.; Xu, W. [Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States); Green, M.P. [North Carolina State University, Department of Physics, Raleigh, NC (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Guiseppe, V.E.; Tedeschi, D.; Wiseman, C. [University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Jasinski, B.R. [University of South Dakota, Department of Physics, Vermillion, SD (United States); Keeter, K.J. [Black Hills State University, Department of Physics, Spearfish, SD (United States); Kidd, M.F. [Tennessee Tech University, Cookeville, TN (United States); Martin, R.D. [Queen' s University, Department of Physics, Engineering Physics and Astronomy, Kingston, ON (Canada); Romero-Romero, E. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Vetter, K. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); University of California, Department of Nuclear Engineering, Berkeley, CA (United States); Wilkerson, J.F. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States)

    2016-11-15

    A search for Pauli-exclusion-principle-violating K{sub α} electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of 5.8 x 10{sup 30} s at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the X-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of 6.8 x 10{sup 30} s at 90% C.L. It is estimated that the Majorana Demonstrator, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of {sup 76}Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation. (orig.)

  7. Super high field ohmically heated tokamak operation

    International Nuclear Information System (INIS)

    Cohn, D.R.; Bromberg, L.; Leclaire, R.J.; Potok, R.E.; Jassby, D.L.

    1986-01-01

    The authors discuss a super high field mode of tokamak operation that uses ohmic heating or near ohmic heating to ignition. The super high field mode of operation uses very high values of Β/sup 2/α, where Β is the magnetic field and a is the minor radius (Β/sup 2/α > 100 T/sup 2/m). We analyze copper magnet devices with major radii from 1.7 to 3.0 meters. Minimizing or eliminating the need for auxiliary heating has the potential advantages of reducing uncertainty in extrapolating the energy confinement time of current tokamak devices, and reducing engineering problems associated with large auxiliary heating requirements. It may be possible to heat relatively short pulse, inertially cooled tokamaks to ignition with ohmic power alone. However, there may be advantages in using a very small amount of auxiliary power (less than the ohmic heating power) to boost the ohmic heating and provide a faster start-up, expecially in relatively compact devices

  8. Ignited tokamak devices with ohmic-heating dominated startup

    International Nuclear Information System (INIS)

    Cohn, D.R.; Bromberg, L.; Jassby, D.L.

    1986-01-01

    Startup of tokamaks such that the auxiliary heating power is significantly less than the ohmic heating power at all times during heating to ignition can be referred to as ''Ohmic-heating dominated startup.'' Operation in this mode could increase the certainty of heating to ignition since energy confinement during startup may be described by present scaling laws for ohmic heating. It could also reduce substantially the auxiliary heating power (the required power may be quite large for auxiliary-heating dominated startup). These advantages might be realized without the potentially demanding requirements for pure ohmic heating to ignition. In this paper the authors discuss the requirements for ohmic-heating dominated startup and present illustrative design parameters for compact experiment ignition devices that use high performance copper magnets

  9. 2D halide perovskite-based van der Waals heterostructures: contact evaluation and performance modulation

    Science.gov (United States)

    Guo, Yaguang; Saidi, Wissam A.; Wang, Qian

    2017-09-01

    Halide perovskites and van der Waals (vdW) heterostructures are both of current interest owing to their novel properties and potential applications in nano-devices. Here, we show the great potential of 2D halide perovskite sheets (C4H9NH3)2PbX4 (X  =  Cl, Br and I) that were synthesized recently (Dou et al 2015 Science 349 1518-21) as the channel materials contacting with graphene and other 2D metallic sheets to form van der Waals heterostructures for field effect transistor (FET). Based on state-of-the-art theoretical simulations, we show that the intrinsic properties of the 2D halide perovskites are preserved in the heterojunction, which is different from the conventional contact with metal surfaces. The 2D halide perovskites form a p-type Schottky barrier (Φh) contact with graphene, where tunneling barrier exists, and a negative band bending occurs at the lateral interface. We demonstrate that the Schottky barrier can be turned from p-type to n-type by doping graphene with nitrogen atoms, and a low-Φh or an Ohmic contact can be realized by doping graphene with boron atoms or replacing graphene with other high-work-function 2D metallic sheets such as ZT-MoS2, ZT-MoSe2 and H-NbS2. This study not only predicts a 2D halide perovskite-based FETs, but also enhances the understanding of tuning Schottky barrier height in device applications.

  10. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

    Science.gov (United States)

    Wang, Ching-Hua; Incorvia, Jean Anne C; McClellan, Connor J; Yu, Andrew C; Mleczko, Michal J; Pop, Eric; Wong, H-S Philip

    2018-05-09

    Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is important to fabricate both unipolar p- and n-type transistors for low-power digital circuits. Here, we report unipolar n-type BP transistors with low work function Sc and Er contacts, demonstrating a record high n-type current of 200 μA/μm in 6.5 nm thick BP. Intriguingly, the electrical transport of the as-fabricated, capped devices changes from ambipolar to n-type unipolar behavior after a month at room temperature. Transmission electron microscopy analysis of the contact cross-section reveals an intermixing layer consisting of partly oxidized metal at the interface. This intermixing layer results in a low n-type Schottky barrier between Sc and BP, leading to the unipolar behavior of the BP transistor. This unipolar transport with a suppressed p-type current is favorable for digital logic circuits to ensure a lower off-power consumption.

  11. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni_2Si formation and the resulting barrier height changes

    International Nuclear Information System (INIS)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-01-01

    Highlights: • Schottky behavior (Φ_B = 0.41 eV) and Fermi level pining were found pre annealing. • Ni_2Si formation was confirmed for 5 min at 850 °C. • 3C/Ni_2Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni_2Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni_2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  12. Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

    Science.gov (United States)

    Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

    2014-10-07

    This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

  13. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni{sub 2}Si formation and the resulting barrier height changes

    Energy Technology Data Exchange (ETDEWEB)

    Tengeler, Sven, E-mail: stengeler@surface.tu-darmstadt.de [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Kaiser, Bernhard [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Chaussende, Didier [Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Jaegermann, Wolfram [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2017-04-01

    Highlights: • Schottky behavior (Φ{sub B} = 0.41 eV) and Fermi level pining were found pre annealing. • Ni{sub 2}Si formation was confirmed for 5 min at 850 °C. • 3C/Ni{sub 2}Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni{sub 2}Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni{sub 2}Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  14. Ohmic Heating: An Emerging Concept in Organic Synthesis.

    Science.gov (United States)

    Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

    2017-06-12

    The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Energy Confinement of both Ohmic and LHW Plasma on EAST

    International Nuclear Information System (INIS)

    Yang Yao; Gao Xiang

    2011-01-01

    Study on the characters of energy confinement in both Ohmic and lower hybrid wave (LHW) discharges on EAST is conducted and the linear Ohmic confinement (LOC), saturated ohmic confinement (SOC) and improved Ohmic confinement (IOC) regimes are investigated in this paper. It is observed that an improved confinement mode characterized by both a drop of D α line intensity and an increase in line average density can be triggered by a gas puffing pulse. (magnetically confined plasma)

  16. Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

    International Nuclear Information System (INIS)

    Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

    2001-01-01

    An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 =53 cm, a l =22 cm - circular limiter configuration, B t ≤0.7T, I p ≤175 kA, ≤6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r=0.5a and r=0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0 % and β N of 2 were achieved. The β N limit achieved is 'soft' (nondisruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

  17. Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

    International Nuclear Information System (INIS)

    Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

    1999-01-01

    An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 = 53 cm, a l = 22 cm - circular limiter configuration, B t ≤ 0.7 T, I p ≤ 175 kA, ≤ 6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r = 0.5a and r = 0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0% and β N of 2 were achieved. The β N limit achieved is 'soft' (non-disruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

  18. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu; Yeh, Ping-Hung; Lu, Shih-Yuan; Wang, Zhong Lin

    2009-01-01

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  19. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu

    2009-12-09

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  20. Ohmic losses in coaxial resonators with longitudinal inner-outer corrugation

    Energy Technology Data Exchange (ETDEWEB)

    Shenyong Hou, A. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yangtze Normal University, Chongqing 408001 (China); Sheng Yu, B.; Hongfu Li, C.; Qixiang Zhao, D. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Xiang Li, E. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Queen Mary University of London, London E1 4NS (United Kingdom)

    2013-05-15

    In this paper, a coaxial resonator with longitudinal inner-outer corrugation is introduced. Its eigen-equation and expression of ohmic losses are derived. Ohmic losses in the cavity are investigated. Results show that ohmic losses in the outer and inner conductors share a similar variation trend, while the former is larger than the later. What's more, changes of the inner and outer slot depth and width induce different variations of ohmic losses on the surface of the inner and outer conductors.

  1. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

    Science.gov (United States)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-04-01

    The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  2. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  3. Schottky contacts to In2O3

    Directory of Open Access Journals (Sweden)

    H. von Wenckstern

    2014-04-01

    Full Text Available n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

  4. Single-Molecule Transport at a Rectifying GaAs Contact.

    Science.gov (United States)

    Vezzoli, Andrea; Brooke, Richard J; Ferri, Nicolò; Higgins, Simon J; Schwarzacher, Walther; Nichols, Richard J

    2017-02-08

    In most single- or few-molecule devices, the contact electrodes are simple ohmic resistors. Here we describe a new type of single-molecule device in which metal and semiconductor contact electrodes impart a function, namely, current rectification, which is then modified by a molecule bridging the gap. We study junctions with the structure Au STM tip/X/n-GaAs substrate, where "X" is either a simple alkanedithiol or a conjugated unit bearing thiol/methylthiol contacts, and we detect current jumps corresponding to the attachment and detachment of single molecules. From the magnitudes of the current jumps we can deduce values for the conductance decay constant with molecule length that agree well with values determined from Au/molecule/Au junctions. The ability to impart functionality to a single-molecule device through the properties of the contacts as well as through the properties of the molecule represents a significant extension of the single-molecule electronics "tool-box".

  5. Empirical scaling for present ohmic heated tokamaks

    International Nuclear Information System (INIS)

    Daughney, C.

    1975-06-01

    Empirical scaling laws are given for the average electron temperature and electron energy confinement time as functions of plasma current, average electron density, effective ion charge, toroidal magnetic field, and major and minor plasma radius. The ohmic heating is classical, and the electron energy transport is anomalous. The present scaling indicates that ohmic-heating becomes ineffective with larger experiments. (U.S.)

  6. Transport and turbulence in TORE SUPRA ohmic discharges

    International Nuclear Information System (INIS)

    Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

    1992-01-01

    The mechanisms underlying the energy confinement behaviour in ohmic tokamak discharges are not yet understood. It is well known that the confinement time increases with the average density and saturates above a critical value of the density, but several explanations exist for this saturation. The present study is an analysis of a set of ohmic discharges in Tore Supra with I p =1.6 MA, B=4 T, R=2.35 m and a=0.78 m, where the average density was increased from 0.9 to 4.2 10 19 m -3 . For these plasma parameters, the energy confinement time given by magnetic measurements saturates for e > ≥ 2.5 10 19 m -3 . It is emphasized here that the onset of ionic turbulence is unlikely in Tore Supra. This conclusion relies on a transport analysis and turbulence measurements by CO 2 laser scattering, whose results are presented in this paper

  7. Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

    Science.gov (United States)

    Minj, Albert; Cros, Ana; Auzelle, Thomas; Pernot, Julien; Daudin, Bruno

    2016-09-01

    Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analyzing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.

  8. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei

    2009-03-11

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

  9. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2014-01-01

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact

  10. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Gershon, Talia S.; Gunawan, Oki; Haight, Richard A.; Lee, Yun Seog

    2017-03-28

    A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

  11. Effect of indirect ohmic heating on quality of ready-to-eat pineapple packed in plastic pouch

    Directory of Open Access Journals (Sweden)

    Hoang Pham

    2014-06-01

    Full Text Available Ready-to-eat fruits packed in sealed containers are highly perishable due to their intrinsic characteristics and lack of full thermal process. Ohmic heating has the advantages of rapid liquid heating through electrical current. The aim of this research was to investigate the effect of indirect ohmic heating on pH, total soluble solids, polyphenol oxidase activity, color and texture of ready-to-eat pineapple packed in a polypropylene pouch with 1% calcium chloride and 0.3% ascorbic acid packing solution. The pre-packed sample in a pouch was placed in the ohmic heating jar filled with 0.5% sodium chloride ohmic heating solution which was then ohmic heated at different voltage gradients (20, 30, 40 V/cm, to different packing solution temperatures (60, 70, 80°C for 60s. Samples were kept at 4°C for quality measurement. It was found that browning index of ready-to-eat pineapple treated with 20 V/cm at 80°C, 30 V/cm at 70°C and 80°C, 40 V/cm at 80°C did not change during 12 days cold storage (p>0.05. Polyphenol oxidase was inactivated when the temperature of the pineapple was 62°C or higher. After 10 days at 4°C, the pineapple heated with 30 V/cm at 70°C had much higher firmness than the un-heated sample kept at the same storage condition. Indirect ohmic heating of pre-packed ready-to-eat pineapple in polypropylene pouch with 30 V/cm at 70°C packing solution temperature for 60s could be used as minimal heating methods to maintain the quality of ready-to-eat fruits in 12 days at 4°C.

  12. Non-ohmic transport behavior in ultra-thin gold films

    International Nuclear Information System (INIS)

    Alkhatib, A.; Souier, T.; Chiesa, M.

    2011-01-01

    Highlights: → C-AFM study on ultra-thin gold films. → Connection between ultra-thin film morphology and lateral electrical transport. → Transition between ohmic and non-ohmic behavior. → Electrical transition correlation to the film structure continuity. → Direct and indirect tunneling regimes related to discontinuous structures. - Abstract: Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (10 10 -10 11 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

  13. Lack of the purinergic receptor P2X7 results in resistance to contact hypersensitivity

    Science.gov (United States)

    Weber, Felix C.; Esser, Philipp R.; Müller, Tobias; Ganesan, Jayanthi; Pellegatti, Patrizia; Simon, Markus M.; Zeiser, Robert; Idzko, Marco; Jakob, Thilo

    2010-01-01

    Sensitization to contact allergens requires activation of the innate immune system by endogenous danger signals. However, the mechanisms through which contact allergens activate innate signaling pathways are incompletely understood. In this study, we demonstrate that mice lacking the adenosine triphosphate (ATP) receptor P2X7 are resistant to contact hypersensitivity (CHS). P2X7-deficient dendritic cells fail to induce sensitization to contact allergens and do not release IL-1β in response to lipopolysaccharide (LPS) and ATP. These defects are restored by pretreatment with LPS and alum in an NLRP3- and ASC-dependent manner. Whereas pretreatment of wild-type mice with P2X7 antagonists, the ATP-degrading enzyme apyrase or IL-1 receptor antagonist, prevents CHS, IL-1β injection restores CHS in P2X7-deficient mice. Thus, P2X7 is a crucial receptor for extracellular ATP released in skin in response to contact allergens. The lack of P2X7 triggering prevents IL-1β release, which is an essential step in the sensitization process. Interference with P2X7 signaling may be a promising strategy for the prevention of allergic contact dermatitis. PMID:21059855

  14. The role of contacts in semiconductor gamma radiation detectors

    International Nuclear Information System (INIS)

    Lachish, U.

    1998-01-01

    It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

  15. Technology, applications and modelling of ohmic heating: a review.

    Science.gov (United States)

    Varghese, K Shiby; Pandey, M C; Radhakrishna, K; Bawa, A S

    2014-10-01

    Ohmic heating or Joule heating has immense potential for achieving rapid and uniform heating in foods, providing microbiologically safe and high quality foods. This review discusses the technology behind ohmic heating, the current applications and thermal modeling of the process. The success of ohmic heating depends on the rate of heat generation in the system, the electrical conductivity of the food, electrical field strength, residence time and the method by which the food flows through the system. Ohmic heating is appropriate for processing of particulate and protein rich foods. A vast amount of work is still necessary to understand food properties in order to refine system design and maximize performance of this technology in the field of packaged foods and space food product development. Various economic studies will also play an important role in understanding the overall cost and viability of commercial application of this technology in food processing. Some of the demerits of the technology are also discussed.

  16. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    International Nuclear Information System (INIS)

    Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

    2014-01-01

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

  17. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-10-30

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

  18. Electrical and photoelectrical properties of poly(phenyl azomethine furane) thin films devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, G.D. [J.N.V. Univ., Jodhpur (India). Dept. of Phys.; Sandogaker, S.G. [J.N.V. Univ., Jodhpur (India). Dept. of Phys.; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur (Raj.) (India)

    1996-05-15

    Poly(phenyl azomethine furane) (PPAF), a conjugated system of poly-Schiff base was synthesised by condensation of p-aminobenzene with furane-2-aldehyde. Oxidative polymerization was conducted at 0-5 C temperature, and the polymer formed was found to be soluble in common organic solvent. Optical properties were studied in the UV-visible-IR region. Electrical and photoelectrical properties of Al/PPAF/ITO and Ag/PPAF/ITO sandwich devices were investigated by measuring the steady state photocurrent resulting from illumination. The device Al/PPAF/ITO shows a Schottky barrier at the Al-PPAF interface and ohmic contact at ITO-PPAF interface. The device Ag/PPAF/ITO shows ohmic contact at both interfaces. This behaviour has been explained in terms of P-type conductivity of the PPAF and the formation of a Schottky barrier with the low work function electrode and ohmic contact with the higher work function electrode. Under low forward bias voltage (ITO positive) ohmic conduction is observed while at higher voltage there is space charge-limited conduction (SCLC). The dependence of the photo short-circuit current on illumination intensity was discussed in detail. The C-V characteristics of both devices have also been analysed. (orig.)

  19. Ohmic ITBs in Alcator C-Mod

    Science.gov (United States)

    Fiore, C. L.; Rowan, W. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

    2007-11-01

    Internal transport barrier plasmas can arise spontaneously in ohmic Alcator C-Mod plasmas where an EDA H-mode has been developed by magnetic field ramping. These ohmic ITBs share the hallmarks of ITBs created with off-axis ICRF injection in that they have highly peaked density and pressure profiles and the peaking can be suppressed by on-axis ICRF. There is a reduction of particle and thermal flux in the barrier region which then allows the neoclassical pinch to peak the central density. Recent work on ITB onset conditions [1] which was motivated by turbulence studies [2] points to the broadening of the Ti profile with off-axis ICRF acting to reduce the ion temperature gradient. This suppresses ITG instability driven particle fluxes, which is thought to be the primary mechanism for ITB formation. The object of this study is to examine the characteristics of ohmic ITBs to find whether the stability of plasmas and the plasma parameters support the onset model. [1]K. Zhurovich, et al., To be published in Nuclear Fusion [2] D. R. Ernst, et al., Phys. Plasmas 11, 2637 (2004)

  20. Start-up of the ohmic phase in JET

    International Nuclear Information System (INIS)

    Tanga, A.; Christiansen, J.P.; Cordey, J.G.; Ejima, S.; Kellman, A.; Lazzaro, E.; Lomas, P.J.; Thomas, P.R.

    1985-01-01

    JET has been designed to permit the study of plasmas in which alphaparticle heating is a significant part of the power balance. In order to have a sufficient thermonuclear yield and to trap the resulting alphaparticles, JET is similar in its dimensions and plasma current to the next generation of reactor-like devices such as NET, FER and INTOR. For this reason, the authors see the results from the study of the start-up of ohmically heated plasmas in JET as highly relevant. Discussed is the range that has been achieved in all major parameters with ohmic heating. Experiences with the wall conditioning technique and the results of ion cyclotron heating experiments in JET are outlined. This paper also describes the stages of plasma formation, current rise and ohmic flat-top

  1. Period doubling in a model of magnetoconvection with Ohmic heating

    International Nuclear Information System (INIS)

    Osman, M. B. H.

    2000-01-01

    In this work it has been studied an idealized model of rotating nonlinear magneto convection to investigate the effects of Ohmic heating. In the over stable region it was found that Ohmic heating can lead to a period-doubling sequence

  2. GaAsP on GaP top solar cells

    Science.gov (United States)

    Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

    1985-01-01

    GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

  3. Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

    Science.gov (United States)

    Yildiz Turp, Gulen; Icier, Filiz; Kor, Gamze

    2016-04-01

    The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Scaling laws for file dissemination in P2P networks with random contacts

    NARCIS (Netherlands)

    Nunez-Queija, R.; Prabhu, B.

    2008-01-01

    In this paper we obtain the scaling law for the mean broadcast time of a file in a P2P network with an initial population of N nodes. In the model, at Poisson rate λ a node initiates a contact with another node chosen uniformly at random. This contact is said to be successful if the contacted node

  5. Scaling laws for file dissemination in P2P networks with random contacts

    NARCIS (Netherlands)

    Núñez-Queija, R.; Prabhu, B.

    2008-01-01

    In this paper we obtain the scaling law for the mean broadcast time of a file in a P2P network with an initial population of N nodes. In the model, at Poisson rate lambda a node initiates a contact with another node chosen uniformly at random. This contact is said to be successful if the contacted

  6. Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

    Science.gov (United States)

    Gu, Q. L.; Cheung, C. K.; Ling, C. C.; Ng, A. M. C.; Djurišić, A. B.; Lu, L. W.; Chen, X. D.; Fung, S.; Beling, C. D.; Ong, H. C.

    2008-05-01

    Au contacts were deposited on n-type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2O2 pretreatment were Ohmic and those with H2O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of ˜10-7 A cm-2. A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature.

  7. Simulation of core turbulence measurement in Tore Supra ohmic regimes

    NARCIS (Netherlands)

    Hacquin, S.; Citrin, J.; Arnichand, H.; Sabot, R.; Bourdelle, C.; Garbet, X.; Kramer-Flecken, A.; Tore Supra team,

    2016-01-01

    This paper reports on a simulation of reflectometry measurement in Tore Supra ohmic discharges, for which the experimental observations as well as gyrokinetic non-linear computations predict a modification of turbulence spectrum between the linear (LOC) and the saturated ohmic confinement (SOC)

  8. Developing and modelling of ohmic heating for solid food products

    DEFF Research Database (Denmark)

    Feyissa, Aberham Hailu; Frosch, Stina

    Heating of solid foods using the conventional technologies is time-consuming due to the fact that heat transfer is limited by internal conduction within the product. This is a big challenge to food manufactures who wish to heat the product faster to the desired core temperature and to ensure more...... uniform quality across the product. Ohmic heating is one of the novel technologies potentially solving this problem by allowing volumetric heating of the product and thereby reducing or eliminating temperature gradients within the product. However, the application of ohmic heating for solid food products...... such as meat and seafood is not industrially utilized yet. Therefore, the aim of the current work is to model and develop the ohmic heating technology for heating of solid meat and seafood. A 3D mathematical model of coupled heat transfer and electric field during ohmic heating of meat products has been...

  9. Optical characterization of magnesium incorporation in p-GaN layers for core–shell nanorod light-emitting diodes

    Science.gov (United States)

    Gîrgel, I.; Šatka, A.; Priesol, J.; Coulon, P.-M.; Le Boulbar, E. D.; Batten, T.; Allsopp, D. W. E.; Shields, P. A.

    2018-04-01

    III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance–voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core–shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core–shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core–shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.

  10. Effects of combined gate and ohmic recess on GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Sunil Kumar

    2016-09-01

    Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

  11. High voltage semiconductor devices and methods of making the devices

    Energy Technology Data Exchange (ETDEWEB)

    Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

    2018-01-23

    A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

  12. Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

    Science.gov (United States)

    Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

    2015-02-01

    To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P urease inactivation. In addition, the inactivation kinetics of the urease in the soymilk could be described with a biphasic model during holding time at a target temperature. Thus, it was concluded that the urease in the soymilk would contain 2 isoenzymes, one is the thermolabile fraction, the other the thermostable fraction, and that the thermostable isoenzyme could not be completely inactivated when the holding time increased, whether the soymilk was cooked with the conventional method or with the ohmic heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease. © 2015 Institute of Food Technologists®

  13. Computational studies of ohmic heating in the spheromak

    International Nuclear Information System (INIS)

    Olson, R.E.

    1983-01-01

    Time-dependent computational simulations using both single-fluid O-D and two-fluid 1 1/2-D models are developed for and utilized in an investigation of the ohmic heating of a spheromak plasma. The plasma density and composition, the applied magnetic field strength, the plasma size, and the plasma current density profile are considered for their effects on the spheromak heating rate and maximum achievable temperature. The feasibility of ohmic ignition of a reactor-size spheromak plasma is also contemplated

  14. Investigation of the Energy Confinement in Ohmic and LHCD Plasmas in HT-7

    International Nuclear Information System (INIS)

    Zhang Xiaoqing; Wan Baonian; Shen Biao; Hu Xiwei; Qian Jinping; Fan Hengyu; Ding Yonghua

    2006-01-01

    Investigation of the energy confinement in ohmic and lower hybrid current drive (LHCD) plasmas in HT-7 has been performed. In ohmic discharges at low densities the global energy confinement time τ E increases almost linearly with the density, saturates at a critical density (2.5 x 10 13 /cm 3 for HT-7) and is nearly constant at higher densities. The energy confinement time is in good agreement with the Neo-Alcator scaling law at different densities and currents. In the LHCD plasmas the global energy confinement time similar to that of the L-mode discharges has been observed to be in good agreement with the low confinement mode (L mode) scaling law of ITER89-P in higher electron density and plasma current

  15. Ohmic H-mode studies in TUMAN-3

    International Nuclear Information System (INIS)

    Lebedev, S.V.; Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Levin, L.S.; Tukachinsky, A.S.; Tendler, M.

    1994-01-01

    The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. The crucial role of the radial electric field in the L-H transition was found in the experiments with boundary biasing. The possibility of initiating the H-mode using single pellet injection was demonstrated. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Thermal energy confinement time enhanced by a factor of 10 compared to predictions of Neo-Alcator scaling. Longest energy confinement time (30 ms) was obtained in the small tokamak TUMAN-3. Absolute values of the energy confinement time are in agreement with scaling proposed for description of the ELM-free H-modes in devices with powerful auxiliary heating (''DIII-D/JET H-mode'' scaling). (author)

  16. Effects of Experimental Volleyball Rules Quantified by Type and Number of Jumps, Hits and Contacts

    Directory of Open Access Journals (Sweden)

    Mladen Stankovic

    2017-10-01

    Full Text Available The purpose of this study was to determine the influence of the two new rules tested at the inaugural U23 Men’s Volleyball World Championship (21-point set excluding the fifth set, and 15 seconds between rallies–10 seconds from the finished point until the referee’s whistle for serve and five seconds for performing the serve on number and types of jumps and number of contacts and hits. The analysis comprised 25,930 jumps (an essential physical activity for volleyball, 15,706 contacts and 10,224 hits during 36 matches played by 144 males aged under 23 at the first Under 23 Men’s World Championships organized in Uberlandia, Brazil, in 2013. Two investigations were conducted: 1 Analysis of jumps by Jump type, In-game role and Level of set win; 2 Analysis of contacts (reception, setting, block, defense and hits (serve and attack by Type, In-game role and Set outcome. Significant differences (p=0.000 were found between in-game role and jump type, as Middle blocker performed the most (34.7%, followed by Outside hitter (24.9%, Setter (24.6% and Opposite (15.8%. Significant differences were found for number and types of Hits between set Winner and Loser teams only for serves by Setter (p<0.001 and Middle blocker (p<0.05. The results showed major differences in jumps, hits and contacts between in-game roles: Middle blocker was the most frequent jumping position, followed by Outside hitter and Setter. The Libero showed a new tendency of being Setter with a jump after the initial Setter defense.

  17. Analysis of a global energy confinement database for JET ohmic plasmas

    International Nuclear Information System (INIS)

    Bracco, G.; Thomsen, K.

    1997-01-01

    A database containing global energy confinement data for JET ohmic plasmas in the campaigns from 1984 to 1992 has been established. An analysis is presented of this database and the results are compared with data from other tokamaks, such as the Axially Symmetric Divertor Experiment (ASDEX), Frascati Tokamak Upgrade (FTU) and Tore Supra. The trends of JET ohmic confinement appear to be similar to those observed on other tokamaks: a linear dependence of the global energy confinement time on density is observed up to a density value where a saturation is attained; this density value defines the border between the linear and the saturated ohmic confinement regimes; this border is shifted towards higher density values if the q value of the discharge is decreased; the global confinement time in the saturated ohmic regime increases less than linearly with the value of the magnetic field. (author). 20 refs, 13 figs, 4 tabs

  18. Ohmic ignition of Neo-Alcator tokamak with adiabatic compression

    International Nuclear Information System (INIS)

    Inoue, Nobuyuki; Ogawa, Yuichi

    1992-01-01

    Ohmic ignition condition on axis of the DT tokamak plasma heated by minor radius and major radius adiabatic compression is studied assuming parabolic profiles for plasma parameters, elliptic plasma cross section, and Neo-Alcator confinement scaling. It is noticeable that magnetic compression reduces the necessary total plasma current for Ohmic ignition device. Typically in compact ignition tokamak of the minor radius of 0.47 m, major radius of 1.5 m and on-axis toroidal field of 20 T, the plasma current of 6.8 MA is sufficient for compression plasma, while that of 11.7 MA is for no compression plasma. Another example with larger major radius is also described. In such a device the large flux swing of Ohmic transformer is available for long burn. Application of magnetic compression saves the flux swing and thereby extends the burn time. (author)

  19. Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

    Science.gov (United States)

    Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

    2017-07-01

    Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

  20. Energy confinement comparison of ohmically heated stellarators to tokamaks

    International Nuclear Information System (INIS)

    Chu, T.K.; Lee, Y.C.

    1979-12-01

    An empirical scaling prescribes that the energy confinement time in ohmically heated stellarators and tokamaks is proportional to the internal energy of the plasma and the minor radius, and inversely proportional to the current density. A thermal-conduction energy transport model, based on a heuristic assumption that the effective momentum transfer in the radial direction is proportional to the classical parallel momentum transfer which results in ohmic heating, is used to explain this scaling

  1. Tuning back contact property via artificial interface dipoles in Si/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dan [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Department of Physics and Institute of Solid-state electronics physical, Ningbo University, Ningbo 315211 (China); Sheng, Jiang, E-mail: shengjiang@nimte.ac.cn; Wu, Sudong; Zhu, Juye; Chen, Shaojie; Gao, Pingqi; Ye, Jichun, E-mail: jichun.ye@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2016-07-25

    Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density (J{sub sc}). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage (V{sub oc}). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.

  2. Ohmic Heating Assisted Lye Peeling of Pears.

    Science.gov (United States)

    Gupta, Sarvesh; Sastry, Sudhir K

    2018-05-01

    Currently, high concentrations (15% to 18%) of lye (sodium hydroxide) are used in peeling pears, constituting a wastewater handling and disposal problem for fruit processors. In this study, the effect of ohmic heating on lye peeling of pears was investigated. Pears were peeled using 0.5%, 1%, 2%, and 3% NaOH under different electric field strengths at two run times and their peeled yields were compared to that obtained at 2% and 18% NaOH with conventional heating. Results revealed that ohmic heating results in greater than 95% peeled yields and the best peel quality at much lower concentrations of lye (2% NaOH at 532 V/m and 3% NaOH at 426 and 479 V/m) than those obtained under conventional heating conditions. Treatment times of 30 and 60 s showed no significant differences. Within the studied range, the effects of increasing field strength yielded no significant additional benefits. These results confirm that the concentration of lye can be significantly lowered in the presence of ohmic heating to achieve high peeled yields and quality. Our work shows that lye concentrations can be greatly reduced while peeling pears, resulting in significant savings in use of caustic chemicals, reduced costs for effluent treatment and waste disposal. © 2018 Institute of Food Technologists®.

  3. Ge-semiconductor detectors with a p-implanted n+-contact

    International Nuclear Information System (INIS)

    Protic, D.; Riepe, G.

    1979-01-01

    P-implanted large-surface-detectors with improved properties can be produced by implantation of the n + -contact with relatively low dose and high energy. After an annealing process a nearly perfect lattice structure is obtained. By a subsequent p-implantation step with high dose and low energy, the surface restisivity can be reduced. The p + -contacts are obtained by B-implantation. (DG) [de

  4. Graphene enhanced field emission from InP nanocrystals.

    Science.gov (United States)

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

    2017-12-08

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  5. EPR ohmic heating energy storage

    International Nuclear Information System (INIS)

    Heck, F.M.; Stillwagon, R.E.; King, E.I.

    1977-01-01

    The Ohmic Heating (OH) Systems for all the Experimental Power Reactor (EPR) designs to date have all used temporary energy storage to assist in providing the OH current charge required to build up the plasma current. The energies involved (0.8 x 10 9 J to 1.9 x 10 9 J) are so large as to make capacitor storage impractical. Two alternative approaches are homopolar dc generators and ac generators. Either of these can be designed for pulse duty and can be made to function in a manner similar to a capacitor in the OH circuit and are therefore potential temporary energy storage devices for OH systems for large tokamaks. This study compared total OH system costs using homopolar and ac generators to determine their relative merits. The total system costs were not significantly different for either type of machine. The added flexibility and the lower maintenance of the ac machine system make it the more attractive approach

  6. Estimating animal movement contacts between holdings of different production types.

    Science.gov (United States)

    Lindström, Tom; Sisson, Scott A; Lewerin, Susanna Stenberg; Wennergren, Uno

    2010-06-01

    Animal movement poses a great risk for disease transmission between holdings. Heterogeneous contact patterns are known to influence the dynamics of disease transmission and should be included in modeling. Using pig movement data from Sweden as an example, we present a method for quantification of between holding contact probabilities based on different production types. The data contained seven production types: Sow pool center, Sow pool satellite, Farrow-to-finish, Nucleus herd, Piglet producer, Multiplying herd and Fattening herd. The method also estimates how much different production types will determine the contact pattern of holdings that have more than one type. The method is based on Bayesian analysis and uses data from central databases of animal movement. Holdings with different production types are estimated to vary in the frequency of contacts as well as in what type of holding they have contact with, and the direction of the contacts. Movements from Multiplying herds to Sow pool centers, Nucleus herds to other Nucleus herds, Sow pool centers to Sow pool satellites, Sow pool satellites to Sow pool centers and Nucleus herds to Multiplying herds were estimated to be most common relative to the abundance of the production types. We show with a simulation study that these contact patterns may also be expected to result in substantial differences in disease transmission via animal movements, depending on the index holding. Simulating transmission for a 1 year period showed that the median number of infected holdings was 1 (i.e. only the index holding infected) if the infection started at a Fattening herd and 2161 if the infection started on a Nucleus herd. We conclude that it is valuable to include production types in models of disease transmission and the method presented in this paper may be used for such models when appropriate data is available. We also argue that keeping records of production types is of great value since it may be helpful in risk

  7. Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

    International Nuclear Information System (INIS)

    Jiang Wei; Gao Hong; Xu Ling-Ling; Ma Jia-Ning; Zhang E; Wei Ping; Lin Jia-Qi

    2011-01-01

    Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ = 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ying; Yang, Lin' an, E-mail: layang@xidian.edu.cn; Wang, Zhizhe; Chen, Qing; Huang, Yonghong; Dai, Yang; Chen, Haoran; Zhao, Hongliang; Hao, Yue [The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2014-09-07

    We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the “dead zone” at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation.

  9. Innovative food processing technology using ohmic heating and aseptic packaging for meat.

    Science.gov (United States)

    Ito, Ruri; Fukuoka, Mika; Hamada-Sato, Naoko

    2014-02-01

    Since the Tohoku earthquake, there is much interest in processed foods, which can be stored for long periods at room temperature. Retort heating is one of the main technologies employed for producing it. We developed the innovative food processing technology, which supersede retort, using ohmic heating and aseptic packaging. Electrical heating involves the application of alternating voltage to food. Compared with retort heating, which uses a heat transfer medium, ohmic heating allows for high heating efficiency and rapid heating. In this paper we ohmically heated chicken breast samples and conducted various tests on the heated samples. The measurement results of water content, IMP, and glutamic acid suggest that the quality of the ohmically heated samples was similar or superior to that of the retort-heated samples. Furthermore, based on the monitoring of these samples, it was observed that sample quality did not deteriorate during storage. © 2013. Published by Elsevier Ltd on behalf of The American Meat Science Association. All rights reserved.

  10. Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires

    Science.gov (United States)

    Abanov, Artem; Tretiakov, Oleg; Liu, Yang

    2011-03-01

    We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).

  11. Activities towards p-type doping of ZnO

    International Nuclear Information System (INIS)

    Brauer, G; Kuriplach, J; Ling, C C; Djurisic, A B

    2011-01-01

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  12. Activities towards p-type doping of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, G [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Kuriplach, J [Department of Low Temperature Physics, Charles University, V Holetovickach 2, CZ-18000 Prague (Czech Republic); Ling, C C; Djurisic, A B, E-mail: g.brauer@fzd.de [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-01-10

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  13. Relationship between healthcare worker surface contacts, care type and hand hygiene: an observational study in a single-bed hospital ward.

    Science.gov (United States)

    King, M-F; Noakes, C J; Sleigh, P A; Bale, S; Waters, L

    2016-09-01

    This study quantifies the relationship between hand hygiene and the frequency with which healthcare workers (HCWs) touch surfaces in patient rooms. Surface contacts and hand hygiene were recorded in a single-bed UK hospital ward for six care types. Surface contacts often formed non-random patterns, but hygiene before or after patient contact depends significantly on care type (P=0.001). The likelihood of hygiene correlated with the number of surface contacts (95% confidence interval 1.1-5.8, P=0.002), but not with time spent in the room. This highlights that a potential subconscious need for hand hygiene may have developed in HCWs, which may support and help focus future hygiene education programmes. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

  14. A thermal transport coefficient for ohmic and ICRF plasmas in alcator C-mode

    International Nuclear Information System (INIS)

    Daughton, W.; Coppi, B.; Greenwald, M.

    1996-01-01

    The energy confinement in plasmas produced by Alcator C-Mod machine is markedly different from that observed by previous high field compact machines such as Alcator A and C, FT, and more recently FTU. For ohmic plasmas at low and moderate densities, the confinement times routinely exceed those expected from the so-called open-quotes neo-Alcatorclose quotes scaling by a factor as high as three. For both ohmic and ICRF heated plasmas, the energy confinement time increases with the current and is approximately independent of the density. The similarity in the confinement between the ohmic and ICRF regimes opens the possibility that the thermal transport in Alcator C-Mod may be described by one transport coefficient for both regimes. We introduce a modified form of a transport coefficient previously used to describe ohmic plasmas in Alcator C-Mod. The coefficient is inspired by the properties of the so-called open-quotes ubiquitousclose quotes mode that can be excited in the presence of a significant fraction of trapped electrons and also includes the constraint of profile consistency. A detailed series of transport simulations are used to show that the proposed coefficient can reproduce the observed temperature profiles, loop voltage and energy confinement time for both ohmic and ICRF discharges. A total of nearly two dozen ohmic and ICRF Alcator C-Mod discharges have been fit over the range of parameter space available using this transport coefficient

  15. Analysis of the ion energy transport in ohmic discharges in the ASDEX tokamak

    International Nuclear Information System (INIS)

    Simmet, E.E.; Fahrbach, H.U.; Herrmann, W.; Stroth, U.

    1996-10-01

    An analysis of the local ion energy transport is performed for more than one hundred well documented ohmic ASDEX discharges. These are characterized by three different confinement regimes: the linear ohmic confinement (LOC), the saturated ohmic confinement (SOC) and the improved ohmic confinement (IOC). All three are covered by this study. To identify the most important local transport mechanism of the ion heat, the ion power balance equation is analyzed. Two methods are used: straightforward calculation with experimental data only, and a comparison of measured and calculated profiles of the ion temperature and the ion heat conductivity, respectively. A discussion of the power balance shows that conductive losses dominate the ion energy transport in all ohmic discharges of ASDEX. Only inside the q=1-surface losses due to sawtooth activity play a role, while at the edge convective fluxes and CX-losses influence the ion energy transport. Both methods lead to the result that both the ion temperature and the ion heat conductivity are consistent with predictions of the neoclassical theory. Enhanced heat losses as suggested by theories eg. on the basis of η i modes can be excluded. (orig.)

  16. Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire

    Science.gov (United States)

    Tretiakov, O. A.; Liu, Y.; Abanov, Ar.

    2010-11-01

    We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.

  17. Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

    Directory of Open Access Journals (Sweden)

    Reta

    2017-07-01

    Full Text Available Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has high acidity that needs to be reduced than Luwak coffee, although it is cheaper. Hence, the ohmic technology with a time and temperature variation were applied to measure the total acidity of the coffee to determine optimum fermentation conditions. Results revealed that the total acidity of the coffee varied with fermentation conditions (0.18% – 0.73%. Generally, the longer the fermentation and the higher the temperature, the lower the total acidity. The acidity of the Luwak coffee through natural fermentation was 2.34%, which is substantially higher than the total acidity from the ohmic samples. Ohmic-based fermentation technology, therefore, offers improvements in coffee quality.

  18. Experimental study of the β-limit in ohmic H-mode in the TUMAN-3M tokamak

    International Nuclear Information System (INIS)

    Lebedev, S.V.; Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Krikunov, S.V.; Levin, L.S.; Rozhdestvensky, V.V.; Tukachinsky, A.S.; Yaroshevich, S.P.

    1998-01-01

    Because of its high confinement properties, the H-mode provides good opportunities to achieve high beta values in a tokamak. In this paper the results of an experimental study of β T and β N limits in the H-mode, obtained in a circular cross section tokamak without auxiliary heating are presented. The experiments were performed in the TUMAN-3M tokamak. The device has the following parameters: R 0 =0.53m, a s =0.22m (limiter configuration), B T ≤1.2T, I p ≤175kA, n-bar e ≤6.2x10 19 m -3 . The stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with fast current ramp-down in ohmic H-mode. A maximum value of β T of 2.0% and β N of 2.0 were achieved. The β N limit achieved reveals itself as a 'soft' (non-disruptive) limit. The stored energy slowly decays after the current ramp-down. No correlation was found between beta restriction and MHD phenomena. Internal transport barrier (ITB) formation was observed in ohmic H-mode. An enhancement factor of 2.0 over ITER93H(ELM-free) was found in the ohmic H-mode with ITB. (author)

  19. Power balance in an Ohmically heated fusion reactor

    International Nuclear Information System (INIS)

    Christiansen, J.P.; Roberts, K.V.

    1982-01-01

    A simplified power-balance equation (zero-dimensional model) is used to study the performance of an Ohmically heated fusion reactor with emphasis on a pulsed reversed-field pinch concept (RFP). The energy confinement time tausub(E) is treated as an adjustable function, and empirical tokamak scaling laws are employed in the numerical estimates, which are supplemented by 1-D ATHENE code calculations. The known heating rates and energy losses are represented by the net energy replacement time tausub(W), which is exhibited as a surface in density (n) and temperature (T) space with a saddle point (nsub(*), Tsub(*)), the optimum ignition point. It is concluded that i) ignition by Ohmic heating is more practicable for the RFP reactor than for a tokamak reactor with the same tausub(E), (ii) if at fixed current the minor radius can be reduced or at fixed minor radius the current can be increased, then it is found that Ohmic ignition becomes more likely when present tokamak scaling laws are used. More definitive estimates require, however, a knowledge of tausub(E), which can only be obtained by establishing a reliable set of experimental RFP scaling laws and, in particular, by extending RFP experiments closer to the reactor regime. (author)

  20. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  1. A Germanium Back Contact Type Thermophotovoltaic Cell

    International Nuclear Information System (INIS)

    Nagashima, Tomonori; Okumura, Kenichi; Yamaguchi, Masafumi

    2007-01-01

    A Ge back contact type photovoltaic cell has been proposed to reduce resistance loss for high current densities in thermophotovoltaic systems. The back contact structure requires less surface recombination velocities than conventional structures with front grid contacts. A SiO2/SiNx double anti-reflection coating including a high refractive index SiNx layer was studied. The SiNx layer has an enough passivation effect to obtain high efficiency. The quantum efficiency of the Ge cell was around 0.8 in the 800-1600 nm wavelength range. The conversion efficiency for infrared lights was estimated at 18% for a blackbody surface and 25% for a selective emitter by using the quantum efficiency and a simulation analysis

  2. p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

    Science.gov (United States)

    Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

    2014-04-23

    In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.

  3. Current-voltage characterization of Au contact on sol-gel ZnO films with and without conducting polymer

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Jheng, Mei-Jyuan; Zeng, Jian-Jhou

    2010-01-01

    This study investigates the current density-voltage (J-V) characteristics of Au/n-type ZnO and Au/polyaniline (PANI)/n-type ZnO devices. ZnO films were prepared by the sol-gel method. For Au/n-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI/n-type ZnO interface is not the origin of the rectifying behavior of Au/PANI/n-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI/n-type ZnO devices could result in the shift of the J-V curve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J-V relationship.

  4. Mechanoluminescent Contact Type Sensor

    Directory of Open Access Journals (Sweden)

    A. K. Yefremov

    2017-01-01

    Full Text Available Mechanoluminescent sensing elements convert mechanical stress into optical radiation. Advantages of such sensors are the ability to generate an optical signal, solid-state, simple structure, and resistance to electromagnetic interference. Mechanoluminescent sensor implementations can possess the concentrated and distributed sensitivity, thereby allowing us to detect the field of mechanical stresses distributed across the area and in volume. Most modern semiconductor photo-detectors can detect mechanoluminescent radiation, so there are no difficulties to provide its detection when designing the mechanoluminescent sensing devices. Mechanoluminescent substances have especial sensitivity to shock loads, and this effect can be used to create a fuse the structure of which includes a target contact type sensor with a photosensitive actuator. The paper briefly describes the theoretical basics of mechanoluminiscence: a light signal emerges from the interaction of crystalline phosphor luminescence centers with electrically charged dislocations, moving due to the deformation of the crystal. A mathematical model of the mechanoluminescent conversion is represented as a functional interaction between parameters of the mechanical shock excitation and the sensor light emission. Examples of computing the optical mechanoluminescent output signal depending on the duration and peak level of impulse load are given. It is shown that the luminous flux, generated by mechanoluminescent sensing element when there is an ammunition-target collision causes the current emerging in photo-detector (photodiode that is sufficient for a typical actuator of the fuse train to operate. The potential possibility to create a contact target type sensor based on the light-sensitive mechanoluminescent sensor was proved by the calculation and simulation results.

  5. The properties of metal contacts on TiO2 thin films produced by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Brus V. V.

    2010-10-01

    Full Text Available The article deals with research on volt-ampere characteristics of metal contacts (Al, Cr, In, Mo, Ti on titanium dioxide thin films and influence of annealing in vacuum on their electric properties. Volt-ampere characteristics measurements were taken by three-probe method. There was established that indium contact on TiO2 thin films possessed sharply defined ohmic properties.

  6. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

    2016-01-01

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  7. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.

    2016-11-30

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  8. Ohmic discharges in Tore Supra - Marfes and detached plasmas

    International Nuclear Information System (INIS)

    Vallet, J.C.

    1990-01-01

    The Tore Supra plasma characteristics are given. The observed discharges are either leaning on the graphite inner first wall or limited by movable pump limiters located outboard and at the bottom of the vacuum chamber. The particular plasma conditions which lead to marfes and detached plasmas in ohmically heated He and D2 discharges limited by the inner wall are investigated. The results show that the ratio of radiated power to ohmic power increase linearly with M.g. As M.g rises, attached plasma, marfe and detached plasma are sequentially observed. Detached plasma with an effective radius as small as. 7 times the limiter radius was observed on Tore Supra

  9. Lithium-drifted silicon detector with segmented contacts

    Science.gov (United States)

    Tindall, Craig S.; Luke, Paul N.

    2006-06-13

    A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

  10. Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

    Science.gov (United States)

    Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

    2015-07-01

    Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

  11. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

    2010-01-01

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  12. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.

    2010-04-27

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  13. The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

    Science.gov (United States)

    Fatemi, Navid S.; Weizer, Victor G.

    1993-01-01

    We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

  14. Contact Geometry of Hyperbolic Equations of Generic Type

    Directory of Open Access Journals (Sweden)

    Dennis The

    2008-08-01

    Full Text Available We study the contact geometry of scalar second order hyperbolic equations in the plane of generic type. Following a derivation of parametrized contact-invariants to distinguish Monge-Ampère (class 6-6, Goursat (class 6-7 and generic (class 7-7 hyperbolic equations, we use Cartan's equivalence method to study the generic case. An intriguing feature of this class of equations is that every generic hyperbolic equation admits at most a nine-dimensional contact symmetry algebra. The nine-dimensional bound is sharp: normal forms for the contact-equivalence classes of these maximally symmetric generic hyperbolic equations are derived and explicit symmetry algebras are presented. Moreover, these maximally symmetric equations are Darboux integrable. An enumeration of several submaximally symmetric (eight and seven-dimensional generic hyperbolic structures is also given.

  15. Ohmic Heating Technology and Its Application in Meaty Food: A Review

    OpenAIRE

    Rishi Richa; N. C. Shahi; Anupama Singh; U. C. Lohani; P. K. Omre; Anil Kumar; T. K. Bhattacharya

    2017-01-01

    The purpose of the current review paper is to investigate and analyze about the effects of ohmic heating (OH) different application in the field of fish, meat and its product and compare it with other conventional thermal methods of food processing such as thawing, heating, cooking etc. Food quality, food safety, convenience, freshness, healthy food, natural flavor and taste with extended shelf-life are the main criteria for the demand made by today’s consumers. Ohmic heating is a substitute ...

  16. The role of type III secretion system and lens material on adhesion of Pseudomonas aeruginosa to contact lenses.

    Science.gov (United States)

    Shen, Elizabeth P; Tsay, Ruey-Yug; Chia, Jean-San; Wu, Semon; Lee, Jing-Wen; Hu, Fung-Rong

    2012-09-21

    To determine the distribution of invasive and cytotoxic genotypes among ocular isolates of P. aeruginosa and investigate the influence of the type III secretion system (T3SS) on adhesion to conventional, cosmetic, and silicone hydrogel contact lenses (CL). Clinical isolates from 2001 to 2010 were analyzed by multiplex PCR for exoS, exoU, and exoT genes. Bacterial adhesion to etafilcon, nelfilcon (gray colored), balafilcon, and galyfilcon CL with or without artificial tear fluid (ATF) incubation were compared. Surface characteristics were determined with scanning electron microscopy (SEM). Among 87 total isolates, 64 strains were from microbial keratitis cases. CL-related microbial keratitis (CLMK) isolates were mostly of the cytotoxic genotype (expressing exoU) (P = 0.002). No significant differences were found in bacterial adhesion to all types of CL between the genotypes under T3SS-inducing conditions. A trend for least bacterial adhesion of galyfilcon compared to the other CL was noted for both genotypes. Needle complex pscC mutants adhered less to all materials than the wild type (P bacteria adhering on CL surfaces. CLMK isolates were mostly of cytotoxic genotype. Different genotypes did not significantly differ in its adhesion to various CL. T3SS and other adhesins are involved in bacteria-contact lens adhesion through complex interactions. Contact lens materials may also play an important role in the adherence of both genotypes of P. aeruginosa.

  17. Confinement requirements for OHMIC-compressive ignition of a Spheromak plasma

    International Nuclear Information System (INIS)

    Olson, R.; Gilligan, J.; Miley, G.

    1980-01-01

    The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression along were sufficient to heat the plasmoids to an ignition temperature. In the present work, we will study the transport conditions under which a Spheromak plasmoid could be expected to reach ignition via a combination of ohmic and compression heating

  18. Confinement requirements for ohmic-compressive ignition of a Spheromak plasma

    International Nuclear Information System (INIS)

    Olson, R.E.; Miley, G.H.

    1981-01-01

    The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression alone is sufficient to heat the plasmoids to an ignition temperature. In the present work, we examine the transport conditions under which a Spheromak plasmoid can be expected to reach ignition via a combination of ohmic and compression heating

  19. Energy confinement scaling in tokamaks: some implications of recent experiments with ohmic and strong auxiliary heating

    International Nuclear Information System (INIS)

    Goldston, R.J.

    1984-02-01

    Recent results from confinement scaling experiments on tokamaks with ohmic and strong auxiliary heating are reviewed. An attempt is made to draw these results together into a low-density ohmic confinement scaling law, and a scaling law for confinement with auxiliary heating. The auxiliary heating confinement law may also serve to explain the saturation in tau/sub E/ vs anti n/sub e/ observed in some ohmic heating density scaling experiments

  20. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    International Nuclear Information System (INIS)

    Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

    2014-01-01

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm 2 ) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications

  1. Impurity toroidal rotation and transport in Alcator C-Mod ohmic high confinement mode plasmas

    International Nuclear Information System (INIS)

    Rice, J. E.; Goetz, J. A.; Granetz, R. S.; Greenwald, M. J.; Hubbard, A. E.; Hutchinson, I. H.; Marmar, E. S.; Mossessian, D.; Pedersen, T. Sunn; Snipes, J. A.

    2000-01-01

    Central toroidal rotation and impurity transport coefficients have been determined in Alcator C-Mod [I. H. Hutchinson et al., Phys. Plasmas 1, 1511 (1994)] Ohmic high confinement mode (H-mode) plasmas from observations of x-ray emission following impurity injection. Rotation velocities up to 3x10 4 m/sec in the co-current direction have been observed in the center of the best Ohmic H-mode plasmas. Purely ohmic H-mode plasmas display many characteristics similar to ion cyclotron range of frequencies (ICRF) heated H-mode plasmas, including the scaling of the rotation velocity with plasma parameters and the formation of edge pedestals in the electron density and temperature profiles. Very long impurity confinement times (∼1 sec) are seen in edge localized mode-free (ELM-free) Ohmic H-modes and the inward impurity convection velocity profile has been determined to be close to the calculated neoclassical profile. (c) 2000 American Institute of Physics

  2. Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells

    KAUST Repository

    Mink, Justine E.

    2013-11-25

    We show that contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs). We experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study. We utilized the industry standard contact material, aluminum, as well as a metal, whose silicide has recently been recognized for its improved performance in smallest scale integration requirements, cobalt. Our study shows that improvements in contact engineering are not only important for device engineering but also for microsystems. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Laminar forced convection in a cylindrical collinear ohmic sterilizer

    Directory of Open Access Journals (Sweden)

    Pesso Tommaso

    2017-01-01

    Full Text Available The present work deals with a thermo-fluid analysis of a collinear cylindrical ohmic heater in laminar flow. The geometry of interest is a circular electrically insulated glass pipe with two electrodes at the pipe ends. For this application, since the electrical conductivity of a liquid food depends strongly on the temperature, the thermal analysis of an ohmic heater requires the simultaneous solution of the electric and thermal fields. In the present work the analysis involves decoupling the previous fields by means of an iterative procedure. The thermal field has been calculated using an analytical solution, which leads to fast calculations for the temperature distribution in the heater. Some considerations of practical interest for the design are also given.

  4. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zakgeim, A. L. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation); Il’inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A., E-mail: ioffeled@mail.ru; Matveev, B. A.; Remennyy, M. A.; Stus’, N. M.; Usikova, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Cherniakov, A. E. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation)

    2017-02-15

    The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λ{sub max} = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.

  5. Effect of electropermeabilization by ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water and apple juice.

    Science.gov (United States)

    Park, Il-Kyu; Kang, Dong-Hyun

    2013-12-01

    The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (Pheating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (Pheating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating.

  6. TNS superconducting ohmic-heating system

    International Nuclear Information System (INIS)

    Wang, S.T.; Fuja, R.; Kim, S.H.; Kustom, R.L.; Praeg, W.F.; Thompson, K.; Turner, L.R.

    1978-01-01

    The superconducting ohmic-heating (OH) system is the selected design for the General Atomics Co./Argonne National Laboratory TNS tokamak design studies. The key features of the OH system design are: (1) parallel coil connection, (2) better utilization of flux core by embedding support cylinder of the toroidal-field coil within the OH inner radius, (3) independent trim coils for correcting the stray fields, (4) low-loss high-current cryostable cable design and (5) OH coil cycling circuit using a reversing bridge. Detailed designs are presented

  7. Effects of different computer typing speeds on acceleration and peak contact pressure of the fingertips during computer typing.

    Science.gov (United States)

    Yoo, Won-Gyu

    2015-01-01

    [Purpose] This study showed the effects of different computer typing speeds on acceleration and peak contact pressure of the fingertips during computer typing. [Subjects] Twenty-one male computer workers voluntarily consented to participate in this study. They consisted of 7 workers who could type 200-300 characteristics/minute, 7 workers who could type 300-400 characteristics/minute, and 7 workers who could type 400-500 chracteristics/minute. [Methods] This study was used to measure the acceleration and peak contact pressure of the fingertips for different typing speed groups using an accelerometer and CONFORMat system. [Results] The fingertip contact pressure was increased in the high typing speed group compared with the low and medium typing speed groups. The fingertip acceleration was increased in the high typing speed group compared with the low and medium typing speed groups. [Conclusion] The results of the present study indicate that a fast typing speed cause continuous pressure stress to be applied to the fingers, thereby creating pain in the fingers.

  8. Effects of the ohmic current on collective scattering spectra

    International Nuclear Information System (INIS)

    Castiglioni, S.; Lontano, M.; Tartari, U.

    1993-01-01

    A numerical and analytical study of the modifications induced in the collective scattering spectra by the ohmic current governing the equilibrium magnetic configuration in toroidal plasmas is presented. The spectral density function is calculated assuming equilibrium distributions for the (bulk and impurity) ion species and a Spitzer-like distribution to describe the response of the electrons to the applied DC electric field. As expected, the spectral asymmetries can be non-negligibly enhanced in the region of the ion-acoustic frequency. They reach their maxima for tangential scattering geometries, where the magnetic effects on the spectra are negligible. This justifies the assumption of the non-magnetized spectra. A theoretically motivated potential is shown to exist for a more detailed experimental investigation of the feasibility of current-density measurements in ohmic plasmas, based on collective scattering. (author)

  9. Pasteurization of citrus juices with ohmic heating to preserve the carotenoid profile

    OpenAIRE

    Achir , Nawel; Dhuique-Mayer , Claudie; Hadjal , Thiziri; Madani , Khodir; Pain , Jean-Pierre; Dornier , Manuel

    2016-01-01

    International audience; This study was carried out to assess, for the first time, the effect of ohmic heating on the carotenoid profile of two citrus fruit juices: grapefruit and blood orange. Two heat treatments were designed to obtain pasteurization values of 50 and 150 min (Tref= 70°C and z-value=10°C) with ohmic heating as compared to conventional heating. The results showed that xanthophyll losses could reach 70% for epoxyxanthophylls (cis-violaxanthin and cis-antheraxanthin) and 40% for...

  10. Effect of milk fat content on the performance of ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica Serovar Typhimurium and Listeria monocytogenes.

    Science.gov (United States)

    Kim, S-S; Kang, D-H

    2015-08-01

    The effect of milk fat content on ohmic heating compared to conventional heating for inactivation of food-borne pathogens was investigated. Sterile cream was mixed with sterile buffered peptone water and adjusted to 0, 3, 7, 10% (w/v) milk fat content. These samples with varying fat content were subjected to ohmic and conventional heating. The effect of milk fat on temperature increase and electrical conductivity were investigated. Also, the protective effect of milk fat on the inactivation of foodborne pathogens was studied. For conventional heating, temperatures of samples increased with time and were not significantly (P > 0.05) different regardless of fat content. Although the inactivation rate of Escherichia coli O157:H7, Salmonella Typhimurium and L. monocytogens decreased in samples of 10% fat content, a protective effect was not observed for conventional heating. In contrast with conventional heating, ohmic heating was significantly affected by milk fat content. Temperature increased more rapidly with lower fat content for ohmic heating due to higher electrical conductivity. Nonuniform heat generation of nonhomogeneous fat-containing samples was verified using a thermal infrared camera. Also, the protective effect of milk fat on E. coli O157:H7 and Listeria monocytogenes was observed in samples subjected to ohmic heating. These results indicate that food-borne pathogens can survive in nonhomogeneous fat-containing foods subjected to ohmic heating. Therefore, more attention is needed regarding ohmic heating than conventional heating for pasteurizing fat-containing foods. The importance of adequate pasteurization for high milk fat containing foods was identified. © 2015 The Society for Applied Microbiology.

  11. Transport analysis of ohmic, L-mode and improved confinement discharges in FTU

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Marinucci, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Romanelli, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Bracco, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Castaldo, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cocilovo, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Giovannozzi, E [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Leigheb, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Monari, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Nowak, S [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Sozzi, C [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Tudisco, O [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cesario, R [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Frigione, D [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Gormezano, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Granucci, G [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Panaccione, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pericoli-Ridolfini, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pieroni, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy)

    2004-11-01

    A thorough investigation of confinement in Frascati Tokamak Upgrade has been carried out on a new database of ohmic, L-mode and advanced scenario discharges (multiple pellet-fuelled, radiation improved and internal transport barriers (ITBs)) obtained with the available auxiliary heating systems, namely electron cyclotron resonant heating, lower hybrid and ion Bernstein wave. A general agreement of the measured {tau}{sub E} with ITER97 L-mode scaling is found in ohmic and L-mode discharges. An improvement of the energy confinement time ({tau}{sub E}) of up to about 60% over the ITER97 L-mode scaling has been obtained in ITB discharges, together with a reduction in local electron transport in the region of high pressure gradient, and up to about 30% in pellet-fuelled discharges (where {tau}{sub E} as large as {approx}120 ms have been reached). The linear density dependence of {tau}{sub E} in ohmic discharges has been found to extend above the saturation density threshold in pellet-fuelled plasmas.

  12. Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

    Energy Technology Data Exchange (ETDEWEB)

    Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

    2017-08-01

    Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

  13. Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Chen, X.D.; Ling, C.C.; Fung, S.; Beling, C.D.; Mei, Y.F.; Fu, Ricky K.Y.; Siu, G.G.; Chu, Paul K.

    2006-01-01

    Rectifying undoped and nitrogen-doped ZnO/p-Si heterojunctions were fabricated by plasma immersion ion implantation and deposition. The undoped and nitrogen-doped ZnO films were n type (n∼10 19 cm -3 ) and highly resistive (resistivity ∼10 5 Ω cm), respectively. While forward biasing the undoped-ZnO/p-Si, the current follows Ohmic behavior if the applied bias V forward is larger than ∼0.4 V. However, for the nitrogen-doped-ZnO/p-Si sample, the current is Ohmic for V forward 2 for V forward >2.5 V. The transport properties of the undoped-ZnO/p-Si and the N-doped-ZnO/p-Si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively

  14. Effects of Ohmic Heating on Microbial Counts and Denaturatiuon of Proteins in Milk

    OpenAIRE

    SUN, Huixian; KAWAMURA, Shuso; HIMOTO, Jun-ichi; ITOH, Kazuhiko; WADA, Tatsuhiko; KIMURA, Toshinori

    2008-01-01

    The aim of this study was to compare the inactivation effects of ohmic heating (internal heating by electric current) and conventional heating (external heating by hot water) on viable aerobes and Streptococcus thermophilus 2646 in milk under identical temperature history conditions. The effects of the two treatments on quality of milk were also compared by assessing degrees of protein denaturation in raw and sterilized milk (raw milk being sterilized by ohmic heating or conventional heating)...

  15. Theoretical scaling law for ohmically heated tokamaks

    International Nuclear Information System (INIS)

    Minardi, E.

    1981-06-01

    The electrostatic drift instability arising from the reduction of shear damping, due to toroidal effects, is assumed to be the basic source of the anomalous electron transport in tokamaks. The Maxwellian population of electrons constitutes a medium whose adiabatic nonlinear reaction to the instability (described in terms of an effective dielectric constant of the medium) determines the stationary electrostatic fluctuation level in marginally unstable situations. The existence of a random electrostatic potenial implies a fluctuating current of the Maxwellian electrons which creates a random magnetic field and a stocasticization of a magnetic configuration. The application of recent results allows the calculation of the realted radial electron transport. It is found that the confinement time under stationary ohmic conditions scales as n Tsub(i)sup( - 1/2) and is proportional roughly to the cube of the geometric dimenisions. Moreover, it is deduced that the loop voltage is approximateley the same for all tokamaks, irrespective of temperature and density and to a large extent, also of geometrical conditions. Thes results are characteristic of the ohmic stationary regime and can hardly be extrapolated to order heating regimes. (orig.)

  16. High thermally stable Ni /Ag(Al) alloy contacts on p-GaN

    Science.gov (United States)

    Chou, C. H.; Lin, C. L.; Chuang, Y. C.; Bor, H. Y.; Liu, C. Y.

    2007-01-01

    Ag agglomeration was found to occur at Ni /Ag to p-GaN contacts after annealing at 500°C. This Ag agglomeration led to the poor thermal stability showed by the Ni /Ag contacts in relation to the reflectivity and electrical properties. However, after alloying with 10at.% Al by e-gun deposition, the Ni /Ag(Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.

  17. Analytical models of Ohmic heating and conventional heating in food processing

    Science.gov (United States)

    Serventi, A.; Bozzoli, F.; Rainieri, S.

    2017-11-01

    Ohmic heating is a food processing operation in which an electric current is passed through a food and the electrical resistance of the food causes the electric power to be transformed directly into heat. The heat is not delivered through a surface as in conventional heat exchangers but it is internally generated by Joule effect. Therefore, no temperature gradient is required and it origins quicker and more uniform heating within the food. On the other hand, it is associated with high energy costs and its use is limited to a particular range of food products with an appropriate electrical conductivity. Sterilization of foods by Ohmic heating has gained growing interest in the last few years. The aim of this study is to evaluate the benefits of Ohmic heating with respect to conventional heat exchangers under uniform wall temperature, a condition that is often present in industrial plants. This comparison is carried out by means of analytical models. The two different heating conditions are simulated under typical circumstances for the food industry. Particular attention is paid to the uniformity of the heat treatment and to the heating section length required in the two different conditions.

  18. Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

    International Nuclear Information System (INIS)

    Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van; Isabella, Olindo; Zeman, Miro

    2016-01-01

    Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R sh n-type  = 95 Ω/□ and R sh p-type  = 120 Ω/□). An efficiency of 19.2% (V oc  = 673 mV, J sc  = 38.0 mA/cm 2 , FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V OC of 696 mV was also measured

  19. Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

    Science.gov (United States)

    Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

    2017-04-01

    Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

  20. A study on the electronic and interfacial structures of monolayer ReS2-metal contacts.

    Science.gov (United States)

    Wang, Jin; Yang, Guofeng; Sun, Rui; Yan, Pengfei; Lu, Yanan; Xue, Junjun; Chen, Guoqing

    2017-10-11

    In this paper, we perform a systematic and rigorous study to evaluate the Ohmic nature of the top-contact formed by the monolayer ReS 2 (mReS 2 ) and metals (gold, silver, platinum, nickel, titanium, and scandium) by means of first-principles density functional theory calculations. We investigate the potential barrier, charge transfer and atomic orbital overlap at the mReS 2 -metal interface in consideration of van der Waals forces to understand how efficiently carriers could be injected from the metal contact to the mReS 2 channel. ReS 2 is physisorbed on Au and Ag, which leads to little perturbation of its electronic structures and forms a larger Schottky contact and a higher tunnel barrier at the interface. ReS 2 is chemisorbed on Ti and Sc, where the bonding strongly perturbs the electronic structures and is found to be purely Ohmic. The bonding of ReS 2 on Pt and Ni lies between these two extreme cases, demonstrating an intermediate behavior. These findings not only provide an insight into the mReS 2 -metal interfaces but may also prove to be instrumental in the future design of ReS 2 -based devices with good performance.

  1. The steady-state tangential contact problem for a falling drop type of contact area on corrugated rail by simplified theory of rolling contact

    Science.gov (United States)

    Piotrowski, Jerzy

    1991-10-01

    Investigation of contact mechanical nonlinearities of a mathematical model of corrugation revealed that the typical shape of contact patch resembles a falling drop of water. A contact patch of that shape was approximated with a figure composed of two parts of ellipses with different eccentricities. The contact pressure distribution was assumed as a smoothing ensemble of two paraboloidal distributions. The description of a general case of double half elliptical contact area was given but a special case of double half elliptical contact is more interesting as it possesses some Hertzian properties. It was shown how three geometrical parameters of double half elliptical contact can be chosen when actual, non-Hertzian contact is known. A linear theory was written which indicates that the lateral vibrations of the rail may be excited only due to shape variation on corrugation even if any other cause for these vibrations does not exist. For nonlinear theory a computer program, based on FASTSIM algorithm by Kalker, was written. The aim is to calculate the creep forces and frictional power density distribution over the contact area. Also, a graphic program visualizing the solution was written. Numerical results are not provided; unattended and unsolved problems relevant for this type of contact are listed.

  2. Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

    International Nuclear Information System (INIS)

    Şenarslan, Elvan; Güzeldir, Betül; Sağlam, Mustafa

    2016-01-01

    In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N 2 . Then respectively RCA1(i.e., boiling in NH 3 +H 2 O 2 +6H 2 O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H 2 O 2 +6H 2 O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N 2 . After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ∼ 4,2 10 -6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N 2 . Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ∼ 1 10 -6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I–V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C–V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. (paper)

  3. Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

    Science.gov (United States)

    Şenarslan, Elvan; Güzeldir, Betül; Sağlam, Mustafa

    2016-04-01

    In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N2. Then respectively RCA1(i.e., boiling in NH3+H2O2+6H2O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H2O2+6H2O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N2. After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ~ 4,2 10-6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N2. Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ~ 1 10-6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark.

  4. The ohmic heating power supply for HL-1 tokamak

    International Nuclear Information System (INIS)

    Mingrui, Z.; Jiashun, C.

    1986-01-01

    A combination of capacitor banks, inductor and DC Fly wheel-Generator sets are used as ohmic heating power supply (OHPS) for HL-1, which is the largest tokamak in China. This system can give changeable waveform of current in a simple way, because of the use of protection for capacitor banks by changeable connection in easy way. Since the technology of forced zero current in the commutating breaker and synchronous self-triggering crowbar are used, the smooth conversion between the wave front provided by discharge of the capacitor banks and the flat top sustained by the inductor and flywheel realized. The performance of the system was tested by a dummy load and the system has been used in the HL-1 experiments. It is confirmed that this system is sufficiently available for the ohmic heating and has important effects on the long plasma lasting time on the order of 1 sec

  5. Investigation of the density turbulence in ohmic ASDEX plasmas

    International Nuclear Information System (INIS)

    Dodel, G.; Holtzhauer, E.

    1989-01-01

    A 119 μm homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs

  6. Investigation of the density turbulence in ohmic ASDEX plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Dodel, G; Holtzhauer, E [Stuttgart Univ. (Germany, F.R.). Inst. fuer Plasmaforschung; Giannone, L.; Niedermeyer, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany, F.R.)

    1989-01-01

    A 119 {mu}m homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs.

  7. Parametric studies in ohmically heated plasmas in Heliotron E

    International Nuclear Information System (INIS)

    Mutoh, T.; Besshou, S.; Ijiri, Y.

    1983-01-01

    Parametric studies of volume averaged electron temperature and global electron energy confinement time /tau/epsilon /SUB e/ of ohmically heated Heliotron E plasmas have been performed using a data acquisition computer system. The scaling laws α (I /SUB OH/ x B/n /SUB e/) /SUP 1/2/ and /tau/epsilon /SUB e/ α n /SUP -1/2/ /SUB e/ x B/I /SUP 3/2/ /SUB OH/ are obtained directly by a code which fits the exponents of the plasma parameters ponents of the plasma parameters to the electron temperature and confinement time. The ohmically heated plasma confinement time /tau/epsilon /SUB e/ is shown to be related to the drift parameters xi (= V /SUB De/ /V /SUB Te/). The dependences of the energy confinement time on other plasma parameters is also presented. An investigation is made of the correlation between MHD activity and the confinement

  8. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

    Science.gov (United States)

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-12-17

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

  9. Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

    International Nuclear Information System (INIS)

    Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P

    2004-01-01

    Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z eff . Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values

  10. Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

    Energy Technology Data Exchange (ETDEWEB)

    Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2004-09-01

    Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z{sub eff}. Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values.

  11. Ohmic H-mode and confinement in TCV

    International Nuclear Information System (INIS)

    Moret, J.M.; Anton, M.; Barry, S.

    1995-01-01

    The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied, has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1-0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence or absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ≅1.6) in long H-modes (1.5 s). (author) 9 figs., 9 refs

  12. Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

    Energy Technology Data Exchange (ETDEWEB)

    Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

    2017-11-15

    The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Growth and morphology of aluminium contacts on P3HT films

    Energy Technology Data Exchange (ETDEWEB)

    Kaune, Gunar [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Fachgruppe Photovoltaik, Von-Danckelmann-Platz 3, 06120 Halle (Germany); Meier, Robert; Metwalli, Ezzeldin; Koerstgens, Volker; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Schlage, Kai; Couet, Sebastien; Roth, Stephan V. [HASYLAB, DESY, Notkestrasse 85, 22603 Hamburg (Germany)

    2011-07-01

    The characteristics of organic electronic devices are strongly influenced by the type and structure of the metal electrodes needed to inject or extract charge carriers. Therefore understanding of the metal growth process and its relation to the interactions at the metal-organic interface are necessary. We investigate the growth of an aluminium layer on the surface of a P3HT thin film by in-situ application of grazing incidence small-angle X-ray scattering (GISAXS). By subsequent modelling of the scattering data the structural parameters of the growing film are extracted and a growth process is found, which proceeds two-dimensional by stacking single atomic layers on top each other. This process results in a homogeneous film with a large contact area to the polymer and is explained by a strong chemical interaction between aluminium and P3HT, which suppresses clustering of the metal on the polymer surface. The diffusion of single aluminium atoms into the P3HT and the formation of an intermixing layer is revealed by X-ray reflectivity measurements.

  14. Energy balance in the ohmically heated FT

    International Nuclear Information System (INIS)

    Bartiromo, R.; Brusati, M.; Cilloco, F.

    1981-01-01

    A typical discharge in the FT Tokamak at 60 kG has been studied in detail in order to derive the power balance between the ohmic input and the plasma losses. Impurity and radiation losses together with ion and electron energy balance are discussed. A power transport term for electrons is derived which is ascribed to anomalous thermal conduction. This resulting thermal transport is compared with those derived from different proposed scalings

  15. Statistical analyses of local transport coefficients in Ohmic ASDEX discharges

    International Nuclear Information System (INIS)

    Simmet, E.; Stroth, U.; Wagner, F.; Fahrbach, H.U.; Herrmann, W.; Kardaun, O.J.W.F.; Mayer, H.M.

    1991-01-01

    Tokamak energy transport is still an unsolved problem. Many theoretical models have been developed, which try to explain the anomalous high energy-transport coefficients. Up to now these models have been applied to global plasma parameters. A comparison of transport coefficients with global confinement time is only conclusive if the transport is dominated by one process across the plasma diameter. This, however, is not the case in most Ohmic confinement regimes, where at least three different transport mechanisms play an important role. Sawtooth activity leads to an increase in energy transport in the plasma centre. In the intermediate region turbulent transport is expected. Candidates here are drift waves and resistive fluid turbulences. At the edge, ballooning modes or rippling modes could dominate the transport. For the intermediate region, one can deduce theoretical scaling laws for τ E from turbulent theories. Predicted scalings reproduce the experimentally found density dependence of τ E in the linear Ohmic confinement regime (LOC) and the saturated regime (SOC), but they do not show the correct dependence on the isotope mass. The relevance of these transport theories can only be tested in comparing them to experimental local transport coefficients. To this purpose we have performed transport calculations on more than a hundred Ohmic ASDEX discharges. By Principal Component Analysis we determine the dimensionless components which dominate the transport coefficients and we compare the results to the predictions of various theories. (author) 6 refs., 2 figs., 1 tab

  16. Unexpected current lowering of Mg contact on SI-GaAs

    International Nuclear Information System (INIS)

    Dubecky, F.; Bohacek, F.; Sekacova, M.; Hubik, P.; Kindl, D.; Gombia, E.; Necas, V.

    2016-01-01

    Four SI-GaAs surface barrier diodes with different contact metallization and/or contact areas were prepared and characterized in terms of the I-V measurements. The possibility of tuning their performance has been demonstrated by virtue of the device engineering, involving a low work-function Mg metallization and manipulation of the contact area. A device with a remarkable current lowering, by almost two orders of magnitude with respect to the 'standard' sample, was prepared. Such a possibility opens new application choices for SI-GaAs not recognized before. We suggest its use, with appropriate metal contact/s, in devices with a low current at low-voltage requirements, such as photonic devices, photodiodes or different physical sensors. The reported data and evidence from the existing literature rule out the widely accepted mechanism of ohmic/bulk-limited and thermionic emission transport as general rules for the interpretation of the low-bias regime in SI-GaAs diodes. The strong blocking ability of the low work function Mg contact was attributed to the downwards band bending, near contact charge carriers accumulation and the corresponding lowering of the bulk SI-GaAs free carrier concentration. (authors)

  17. Hair dye dermatitis and p-phenylenediamine contact sensitivity: A preliminary report

    Directory of Open Access Journals (Sweden)

    Mrinal Gupta

    2015-01-01

    Full Text Available Background: The contact allergic reactions from p-phenylenediamine (PPD in hair dyes vary from mild contact dermatitis to severe life- threatening events (angioedema, bronchospasm, asthma, renal impairment. Objectives: To study the clinical patterns and PPD contact sensitivity in patients with hair-dye dermatitis. Materials and Methods: Eighty (M: F 47:33 consecutive patients aged between 18 and 74 years suspected to have contact allergy from hair dye were studied by patch testing with Indian Standard Series including p-phenylenediamine (PPD, 1.0% pet. Results: 54 Fifty-four (M: F 21:33 patients showed positive patch tests from PPD. Eight of these patients also showed positive patch test reaction from fragrance mix, thiuram mix, paraben mix, or colophony. Fifty-seven (71% patients affected were aged older than 40 years. The duration of dermatitis varied from 1 year with exacerbation following hair coloring. Forty-nine patients had dermatitis of scalp and/or scalp margins and 23 patients had face and neck dermatitis. Periorbital dermatitis, chronic actinic dermatitis, and erythema multiforme-like lesions were seen in 4, 2, and 1 patients, respectively. Conclusions: Hair dyes and PPD constitute a significant cause of contact dermatitis. There is an urgent need for creating consumer awareness regarding hair-dyes contact sensitivity and the significance of performing sensitivity testing prior to actual use.

  18. Novel Contact Materials for Improved Performance CdTe Solar Cells Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Rockett, Angus [Colorado School of Mines, Golden, CO (United States); Marsillac, Sylvain [Old Dominion Univ., Norfolk, VA (United States); Collins, Robert [Univesity of Toledo

    2018-04-15

    This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in seven journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier type in Cd

  19. P-MoS2 / n-CdS thin film heterojunction

    International Nuclear Information System (INIS)

    El Maliki, H.; Gourmelon, E.; Bernede, J.C.; Pouzet, J.; Mebarki, M.; Khelil, A.; Zoaeter, M.

    1999-01-01

    Full text.Layered transition metal dichacolgenides such as MoS 2 are semiconductors that can be good candidates for solar energy conversion. Photo-electrochemical cells based on single crystals have achieved and efficiency of 17% (1). However, up to day, no solid rectifying contact has been put in evidence in the case of MoS 2 thin films.. Recently we have shown that such high crystalline quality MoS 2 films can be obtained onto textured tungsten slides. This allowed to try to grow sandwich rectifying structures. The bottom electrode will be W, MoS 2 being p-type, the n type film used was CdS and the upper electrode was indium. W foils textured along the (h00) direction were used as substrate and bottom electrode. The use of a W (textured) substrate induces the texturation of the MoS 2 films along the (001) direction when after evaporation of the constituents the films were annealed at T=1073 K for half an hour under argon atmosphere. Upon the MoS 2 a CdS thin film was deposited by chemical bath deposition (CBD). CdS thin films were prepared classically from a solution of cadmium sulfate, thiourea in hydrazine and ammonia. Ammonia was used adjust the solution pH to a value between 9 and 10. Bath temperature has been held constant at 343 K. Thin deposit films of CdS were yellow colored. They were constituted of an homogenous and adherent layer with a thickness of about 100 nm. It has been shown by x-ray diffraction the they were crystallized in their hexagonal structure. At least an indium film was deposited in order to achieve the structure M/MoS 2 p/CdSn/M. In order to check the equality of the W/MoS 2 contact, W/MoS 2 /W samples were also carried out by sputtering deposition of the tungsten upper electrode (300 nm thick). The thickness of the MoS 2 layers was about 500 nm. The J-V characteristics of a W/MoS 2 /W sample are ohmic. Moreover the resistance deduced from the slope ΔV/ΔI increases when the temperature decreases, which shows that there is not any

  20. On the effect of subphase pH and counterions on transfer ratios and dynamic contact angles during deposition of multiple Langmuir-Blodgett monolayers

    International Nuclear Information System (INIS)

    Diaz, M. Elena; Cerro, Ramon L.

    2005-01-01

    The effects of pH and counterions on the type of deposition of Langmuir-Blodgett (LB) arachidic acid films onto hydrophobic glass slides is revisited. Unusually large differences in contact angles and transfer ratios (TR) were observed for subphase containing 10 -4 M of zinc sulfate and 2.10 -4 M of cadmium chloride, respectively, for a wide range of pH. Variations in TR occur at the same pH for different subphase cations and at different pH for the same divalent cations. These large variations in dynamic contact angles and TR as a function of pH point to the crucial role of electrical double layer forces in LB deposition phenomena. Transitions from Y- to X-type deposition are reported for pH larger or smaller than the pK A of the fatty acid-subphase salt system. Experimental results are compared with data reported in literature showing Z- to Y-transitions at pH close to the pK A of docosanoic acid monolayers

  1. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  2. Comparative Study Between Internal Ohmic Resistance and Capacity for Battery State of Health Estimation

    Directory of Open Access Journals (Sweden)

    M. Nisvo Ramadan

    2015-12-01

    Full Text Available In order to avoid battery failure, a battery management system (BMS is necessary. Battery state of charge (SOC and state of health (SOH are part of information provided by a BMS. This research analyzes methods to estimate SOH based lithium polymer battery on change of its internal resistance and its capacity. Recursive least square (RLS algorithm was used to estimate internal ohmic resistance while coloumb counting was used to predict the change in the battery capacity. For the estimation algorithm, the battery terminal voltage and current are set as the input variables. Some tests including static capacity test, pulse test, pulse variation test and before charge-discharge test have been conducted to obtain the required data. After comparing the two methods, the obtained results show that SOH estimation based on coloumb counting provides better accuracy than SOH estimation based on internal ohmic resistance. However, the SOH estimation based on internal ohmic resistance is faster and more reliable for real application

  3. A Application of WD Model to EB Type Contact Binary System

    Directory of Open Access Journals (Sweden)

    Su-Yeon Oh

    2000-12-01

    Full Text Available The EB type contact binaries show large temperature difference ( T 1,000K between two components. Thus we have modified the mode 3 of the WD program to adjust albedos, limb darkening coefficients and gravity darkening exponents for both components of such binaries, while the values for those parameters should be same for both components in the original WD program. Both of the modified and the original versions have been applied to the EB type contact binaries such as DO Cas, GO Cyg, and FS Lup. The computed light curves with modified version fit better to the observations.

  4. Ohmic Treatment of Pear Purées (cv. ‘Conference’ in Terms of Some Quality Related Attributes

    Directory of Open Access Journals (Sweden)

    Oana Viorela NISTOR

    2015-06-01

    Full Text Available The effect of ohmic treatment on some quality related characteristics of pear purée (cv. ‘Conference’ such as color, reducing sugars, total phenols, rheological behavior and microbial counts, was analyzed. The inactivation kinetics of pectin methyl esterase (PME in pear crude extract and purée were studied by conventional thermal and ohmic treatments. Thermal inactivation of PME in crude extract was described by a first-order kinetic model. The activation energy values suggested the presence of two isoenzymes with different thermostability. The ohmic heating reduced PME activity by 96% at 25 V·cm-1. Minimal changes induced by ohmic heating on above quality related aspects were observed. Supporting this statement, there were no significant changes in the nutritional and sensorial attributes. It was reported an increase of 3% of reducing sugar content for the ohmic heated samples. The phenolic content of the treated samples registered a reduction of 59% in comparison with fresh pear purée. The pear purée presented a non-Newtonian pseudoplastic behaviour. The Ostwald de Waele model was fitted to rheograms and the consistency coefficient (m and flow behavior index (n were determined. Results obtained for the microbial charge were higher in the control samples. Thus, microbial counts showed complete inactivation of yeast and mold at voltage gradient higher than 17.5 V·cm-1.

  5. Inverse relationship between allergic contact dermatitis and type 1 diabetes mellitus

    DEFF Research Database (Denmark)

    Engkilde, K; Menné, T; Johansen, J D

    2006-01-01

    AIMS/HYPOTHESIS: Contact allergy (CA) is a disease induced and maintained by environmental factors, which mainly has a Th2 pattern in its chronic form. Environmental factors play a major role in CA, while genetic factors are of minor importance. Type 1 diabetes is an autoimmune disease of the isl......AIMS/HYPOTHESIS: Contact allergy (CA) is a disease induced and maintained by environmental factors, which mainly has a Th2 pattern in its chronic form. Environmental factors play a major role in CA, while genetic factors are of minor importance. Type 1 diabetes is an autoimmune disease...... 0.46-0.86). After adjusting for sex and age, the odds ratio was 0.63 (95% CI 0.47-0.86). CONCLUSIONS/INTERPRETATION: An inverse relationship between CA and type 1 diabetes was found. Thus there may be a protective effect of having CA in relation to the risk of type 1 diabetes, or vice versa type 1...

  6. Ohmic H-mode and confinement in TCV

    International Nuclear Information System (INIS)

    Moret, J.-M.; Anton, M.; Barry, S.

    1995-01-01

    The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied (κ = 1.3 - 1.9, δ 0.1 - 0.7) has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1 - 0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence of absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ∼ 1.6) in long H-modes (1.5 s). (Author)

  7. Application of low frequency pulsed ohmic heating for inactivation of foodborne pathogens and MS-2 phage in buffered peptone water and tomato juice.

    Science.gov (United States)

    Kim, Sang-Soon; Choi, Won; Kang, Dong-Hyun

    2017-05-01

    The purpose of this study was to inactivate foodborne pathogens effectively by ohmic heating in buffered peptone water and tomato juice without causing electrode corrosion and quality degradation. Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes were used as representative foodborne pathogens and MS-2 phage was used as a norovirus surrogate. Buffered peptone water and tomato juice inoculated with pathogens were treated with pulsed ohmic heating at different frequencies (0.06-1 kHz). Propidium iodide uptake values of bacterial pathogens were significantly (p heating is applicable to inactivate foodborne pathogens effectively without causing electrode corrosion and quality degradation in tomato juice. Copyright © 2016. Published by Elsevier Ltd.

  8. Inner layer-embedded contact lenses for pH-triggered controlled ocular drug delivery.

    Science.gov (United States)

    Zhu, Qiang; Liu, Chang; Sun, Zheng; Zhang, Xiaofei; Liang, Ning; Mao, Shirui

    2018-07-01

    Contact lenses (CLs) are ideally suited for controlled ocular drug delivery, but are limited by short release duration, poor storage stability and low drug loading. In this study, we present a novel inner layer-embedded contact lens capable of pH-triggered extended ocular drug delivery with good storage stability. Blend film of ethyl cellulose and Eudragit S100 was used as the inner layer, while pHEMA hydrogel was used as outer layer to fabricate inner layer-embedded contact lens. Using diclofenac sodium(DS) as a drug model, influence of polymer ratio in the blend film, EC viscosity, drug/polymer ratio, inner layer thickness and outlayer thickness of pHEMA hydrogel on drug release behavior was studied and optimized for daily use. The pH-triggered drug eluting pattern enables the inner layer-embedded contact lens being stored in phosphate buffer solution pH 6.8 with ignorable drug loss and negligible changes in drug release pattern. In vivo pharmacokinetic study in rabbits showed sustained drug release for over 24 h in tear fluid, indicating significant improvement in drug corneal residence time. A level A IVIVC was established between in vitro drug release and in vivo drug concentration in tear fluid. In conclusion, this inner layer embedded contact lens design could be used as a platform for extended ocular drug delivery with translational potential for both anterior and posterior ocular diseases therapy. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Heterostructures for Increased Quantum Efficiency in Nitride LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Davis, Robert F. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

    2010-09-30

    Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

  10. Optimized design of polarizers with low ohmic loss and any polarization state for the 28 GHz QUEST ECH/ECCD system

    Energy Technology Data Exchange (ETDEWEB)

    Tsujimura, Toru Ii, E-mail: tsujimura.tohru@nifs.ac.jp [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan); Idei, Hiroshi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Kubo, Shin; Kobayashi, Sakuji [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan)

    2017-01-15

    Highlights: • Ohmic loss was calculated on the grooved mirror surface in simulated polarizers. • Polarizers with a low ohmic loss feature were optimally designed for 28 GHz. • Smooth rounded-rectangular grooves were made by mechanical machining. • The designed polarizers can realize all polarization states. - Abstract: In a high-power long-pulse millimeter-wave transmission line for electron cyclotron heating and current drive (ECH/ECCD), the ohmic loss on the grooved mirror surface of polarizers is one of the important issues for reducing the transmission loss. In this paper, the ohmic loss on the mirror surface is evaluated in simulated real-scale polarizer miter bends for different groove parameters under a linearly-polarized incident wave excitation. The polarizers with low ohmic loss are optimally designed for a new 28 GHz transmission line on the QUEST spherical tokamak. The calculated optimum ohmic loss is restricted to only less than 1.5 times as large as the theoretical loss for a copper flat mirror at room temperature. The copper rounded-rectangular grooves of the polarizers were relatively easy to make smooth in mechanical machining and the resultant surface roughness was not more than 0.15 μm, which is only 0.38 times as large as the skin depth. The combination of the designed elliptical polarizer and the polarization rotator can also realize any polarization state of the reflected wave.

  11. Prevalence of Contact Allergy to p-Phenylenediamine in the European General Population

    NARCIS (Netherlands)

    Diepgen, Thomas L.; Naldi, Luigi; Bruze, Magnus; Cazzaniga, Simone; Schuttelaar, Marie-Louise; Elsner, Peter; Goncalo, Margarida; Ofenloch, Robert; Svensson, Ake

    Population-based studies on contact allergy to p-phenylenediamine (PPD) are scarce. A cross-sectional study was performed to assess the prevalence of contact allergy to PPD and its risk factors in the general population of 5 European countries. A total of 10,425 subjects were interviewed, and a

  12. Transparent back contacts for P3HT:PCBM bulk heterojunction solar cells

    International Nuclear Information System (INIS)

    Sendova-Vassileva, M; Dikov, H; Popkirov, G; Lazarova, E; Vitanov, P; Gancheva, V; Grancharov, G; Tsocheva, D; Mokreva, P

    2014-01-01

    A new combination of layers functioning as a transparent contact is proposed and tested in real solar cells. The contacts consist of TiO 2 layers and thin metal layers (Ag, Cu) and are deposited by magnetron sputtering. The optical transmission and electrical conductivity of the transparent contact layers (TCL) are measured. The TCLs are applied as back contacts in bulk heterojunction polymer solar cells deposited on ITO covered glass and consisting of the following layers: ITO/PEDOT:PSS/P3HT:PCBM/back contact. The organic layers are deposited by spin-coating. For comparison, the same bulk heterojunction polymer solar cells are prepared with a sputtered Ag back contact. The first results show a dependence of the current-voltage parameters of the studied solar cells on the thickness of the different component layers of the transparent back contacts. There is a balance that has to be observed between the electrical characteristics of the contacts and their optical transparency. Future plans involve their inclusion as intermediate contacts in tandem organic solar cells.

  13. Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

    Energy Technology Data Exchange (ETDEWEB)

    Moura, F.A.B.F. de, E-mail: fidelis@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Lyra, M.L. [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Almeida, M.L. de; Ourique, G.S.; Fulco, U.L.; Albuquerque, E.L. [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil)

    2016-10-14

    We determine, by using a tight-binding model Hamiltonian, the characteristic current–voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation. - Highlights: • Ohmic resistance of finite segments of poly-CG DNA-like segments. • Possibility for the development of biosensor devices. • Methylation effect and electronic transport in DNA-like segments.

  14. The effects of two different types of bandage contact lenses on the healthy canine eye.

    Science.gov (United States)

    Braus, Barbara Katharina; Riedler, Daniela; Tichy, Alexander; Spergser, Joachim; Schwendenwein, Ilse

    2018-02-06

    To compare two types of bandage contact lenses on the healthy canine eye. Six healthy Beagles. Two different types of bandage contact lenses (single sized human silicone contact lens 'PureVision 2' (Bausch & Lomb Incorporated, Rochester, NY, USA) and specially designed veterinary hydrogel contact lens 'AcriVet Pat D' (Bausch & Lomb Incorporated) were placed in 12 eyes of healthy Beagle dogs. Retention times and the effects of the lenses regarding irritation of the eye, changes in tear production, impact of contact lenses on tonometric readings, and cytologic and microbiological alterations of the canine eye were investigated. Mean retention times for veterinary hydrogel lenses with special dimensions were significantly shorter (2 days) than for one size human silicon lenses (8.8 days). Irritation scores were overall low for both types of lenses apart from one human lens causing severe irritation and keratoconjunctivitis as a sequel to folding and displacement. Tear production remained stable in human contact lenses. Intraocular pressure readings with a contact lens in place were only slightly altered; the most accurate readings were obtained through a human lens with an applanation tonometer. Cytology revealed a slight, nonsignificant increase in neutrophilic granulocytes with both types of lenses; the microflora did not change significantly. Human silicone lenses have significantly longer retention times and are less expensive than veterinary hydrogel lenses. In regard to irritation, bacterial growth and inflammation, both types of lenses can be recommended for use in canine eyes. © 2018 American College of Veterinary Ophthalmologists.

  15. The role of contact resistance in graphene field-effect devices

    Science.gov (United States)

    Giubileo, Filippo; Di Bartolomeo, Antonio

    2017-08-01

    The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

  16. Effect of composition on the polarization and ohmic resistances of ...

    Indian Academy of Sciences (India)

    2017-06-09

    Jun 9, 2017 ... Solid oxide fuel cell; composite cathodes; polarization resistance; ohmic resistance; ... of Oad on LSM, (iii) conversion of Oad into oxygen ion ... ions need to flow through the low temperature sintered ..... TPB's are present) suggest the formation of face-to-face con- ..... calculated using the following equation.

  17. Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

    KAUST Repository

    Debnath, Ratan

    2010-01-01

    With an aim to reduce the cost of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces costly Au with a low-cost Ni-based Ohmic contact. The resultant devices achieve 3.5% Air Mass 1.5 power conversion efficiency. Only by incorporating a 1.2-nm-thick LiF layer between the PbS quantum dot film and Ni, we were able to prevent undesired reactions and degradation at the metal-semiconductor interface. © 2010 American Institute of Physics.

  18. Compound sawtooth study in ohmically heated TFTR plasmas

    International Nuclear Information System (INIS)

    Yamada, H.; McGuire, K.; Colchin, D.

    1985-09-01

    Compound sawtooth activity has been observed in ohmically heated, high current, high density TFTR plasmas. Commonly called ''double sawteeth,'' such sequences consist of a repetitive series of subordinate relaxations followed by a main relaxation with a different inversion radius. The period of such compound sawteeth can be as long as 100 msec. In other cases, however, no compound sawteeth or bursts of them can be observed in discharges with essentially the same parameters

  19. Space chamber experiments of ohmic heating by high power microwave from the solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, N.; Matsumoto, H.

    1981-12-01

    It is quantitatively predicted that a high power microwave from the Solar Power Satellite (SPS) nonlinearly interacts with the ionospheric plasma. The possible nonlinear interactions are ohmic heating, self-focusing and parametric instabilities. A rocket experiment called MINIX (Microwave-Ionosphere Nonlinear Interaction Experiment) has been attempted to examine these effects, but is note reported here. In parallel to the rocket experiment, a laboratory experiment in a space plasma simulation chamber has been carried out in order to examine ohmic heating in detail and to develop a system of the rocket experiment. Interesting results were observed and these results were utilized to revise the system of the rocket experiments. A significant microwave heating of plasma up to 150% temperature increase was observed with little electron density decrease. It was shown that the temperature increase is not due to the RF breakdown but to the ohmic heating in the simulated ionospheric plasma. These microwave effects have to be taken into account in the SPS Project in the future.

  20. An investigation on the application of ohmic heating of cold water shrimp and brine mixtures

    DEFF Research Database (Denmark)

    Pedersen, Søren Juhl; Feyissa, Aberham Hailu; Brøkner Kavli, Sissel Therese

    2016-01-01

    Cooking is an important unit-operation in the production of cooked and peeled shrimps. The present study explores the feasibility of using ohmic heating for cooking of shrimps. The focus is on investigating the effects of different process parameters on heating time and quality of ohmic cooked...... shrimps (Pandalus Borelias). The shrimps were heated to a core temperature of 72 °C in a brine solution using a small batch ohmic heater. Three experiments were performed: 1) a comparative analyses of the temperature development between different sizes of shrimps and thickness (head and tail region...... of the shrimp) over varying salt concentrations (10 kg m−3 to 20 kg m−3) and electric field strengths (1150 V m−1 to 1725 V m−1) with the heating time as the response; 2) a 2 level factorial experiment for screening the impact of processing conditions using electric field strengths of 1250 V m−1 and 1580 V m−1...

  1. Fokker-Planck equation of the reduced Wigner function associated to an Ohmic quantum Langevin dynamics

    Science.gov (United States)

    Colmenares, Pedro J.

    2018-05-01

    This article has to do with the derivation and solution of the Fokker-Planck equation associated to the momentum-integrated Wigner function of a particle subjected to a harmonic external field in contact with an ohmic thermal bath of quantum harmonic oscillators. The strategy employed is a simplified version of the phenomenological approach of Schramm, Jung, and Grabert of interpreting the operators as c numbers to derive the quantum master equation arising from a twofold transformation of the Wigner function of the entire phase space. The statistical properties of the random noise comes from the integral functional theory of Grabert, Schramm, and Ingold. By means of a single Wigner transformation, a simpler equation than that mentioned before is found. The Wigner function reproduces the known results of the classical limit. This allowed us to rewrite the underdamped classical Langevin equation as a first-order stochastic differential equation with time-dependent drift and diffusion terms.

  2. Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

    Science.gov (United States)

    Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

    2018-04-25

    A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

  3. Photoemission study on the formation of Mo contacts to CuInSe2

    International Nuclear Information System (INIS)

    Nelson, A.J.; Niles, D.W.; Kazmerski, L.L.; Rioux, D.; Patel, R.; Hoechst, H.

    1992-01-01

    Synchrotron radiation soft-x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the Mo/CuInSe 2 interface. Mo overlayers were e-beam deposited in steps on single-crystal n-type CuInSe 2 at ambient temperature. Photoemission measurements were acquired after each growth in order to observe changes in the valence-band electronic structure as well as changes in the In 4d, Se 3d, and Mo 4d core lines. Photoemission measurements on the valence-band and core lines were also obtained after annealing. The results were used to correlate the interface chemistry with the electronic structure at this interface and to directly determine the maximum possible Schottky barrier height φ b to be ≤0.2 eV at the Mo/CuInSe 2 junction before annealing, thus showing that this contact is essentially ohmic

  4. Physicochemical properties of masa and corn tortilla made by ohmic ...

    African Journals Online (AJOL)

    Instant corn flour obtained by ohmic heating (OHICF) was used to prepare masa and tortillas. In this study, the effect of average particle size, moisture, and the final temperature on the physicochemical properties of masa and tortillas elaborated from OHICF was evaluated and were compared with flour obtained by the ...

  5. Radial profiles of neutron emission from ohmic discharges in JET

    International Nuclear Information System (INIS)

    Cheetham, A.; Gottardi, N.; Jarvis, O.N.

    1989-01-01

    Neutron emission profiles from several ohmically heated discharges have been studied using a variety of analytical techniques to extract the ion temperature profiles which are found to agree well, both in shape and magnitude, with the electron temperature profiles as measured by the LIDAR Thomson scattering diagnostic. (author) 7 refs., 3 figs

  6. Real-time protection of the Ohmic heating coil force limits in DIII-D

    International Nuclear Information System (INIS)

    Broesch, J.D.; Scoville, J.T.; Hyatt, A.W.; Coon, R.M.

    1997-11-01

    The maximum safe operating limits of the DIII-D tokamak are determined by the force produced in the ohmic heating coil and the toroidal field coil during a plasma pulse. This force is directly proportional to the product of the current in the coils. Historically, the current limits for each coil were set statically before each pulse without regard for the time varying nature of the currents. In order to allow the full time-dependent capability of the ohmic coil to be used, a system was developed for monitoring the product of the currents dynamically and making appropriate adjustments in real time. This paper discusses the purpose, implementation, and results of this work

  7. Mathematical model of solid food pasteurization by ohmic heating: influence of process parameters.

    Science.gov (United States)

    Marra, Francesco

    2014-01-01

    Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product.

  8. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, Sunetra L.; Latthe, Sanjay S. [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India); Kappenstein, Charles [University of Poitiers, Laboratory of Catalysis in Organic Chemistry, LA CCO, UMR CNRS 6503, Poitiers-86000 (France); Mukherjee, S.K. [Fuel Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400085, Maharashtra India (India); Rao, A. Venkateswara, E-mail: avrao2012@gmail.com [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India)

    2010-04-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 A. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle {approx}156{sup o}) while that on glass it is hydrophilic (contact angle {approx}88{sup o}). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  9. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    International Nuclear Information System (INIS)

    Dhere, Sunetra L.; Latthe, Sanjay S.; Kappenstein, Charles; Mukherjee, S.K.; Rao, A. Venkateswara

    2010-01-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 A. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle ∼156 o ) while that on glass it is hydrophilic (contact angle ∼88 o ). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  10. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

    Science.gov (United States)

    Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

    2017-10-24

    The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

  11. Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts

    NARCIS (Netherlands)

    Wong, P.K.J.; Zhang, W.; Zhang, W.; Xu, Y.B.

    2010-01-01

    Moderately doped n-GaAs(100) substrates (n= 5 x 10 17cm3 ) with In Ohmic back contacts were annealed in the growth chamber with a base pressure of 1 x 10-8 mbar for 60 min at 830 K prior to the film stack growth. MgO layer was then grown by e-beam evaporation at a rate of 2 Amin-1 while the

  12. Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

    Science.gov (United States)

    Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

    2018-03-01

    Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

  13. Scanning electrochemical microscopy for the fabrication of copper nanowires: Atomic contacts with quantized conductance, and molecular adsorption effect

    International Nuclear Information System (INIS)

    Janin, Marion; Ghilane, Jalal; Lacroix, Jean-Christophe

    2012-01-01

    Highlights: ► Electrochemistry and SECM to generate copper nanowires with quantized conductance. ► Stable atomic contacts lasting for several hundreds of seconds have been obtained. ► The quantized conductances are independent of the tip and gap size. ► The method allows contacts to be generated in the presence of chosen molecules. ► Four-electrode configuration opens the route to redox gated atomic contact. - Abstract: Scanning electrochemical microscopy, SECM, is proposed as a tool for the fabrication of copper nanowires. In a first step, configuration based on two electrodes, a platinum UME (cathode) and a copper substrate (anode), operating in the SECM configuration was employed. For nanowires generated in water the conductance changes stepwise and varies by integer values of the conductance quantum G 0 . The formation of atomic contacts is supported by the ohmic behavior of the I–V curve. It depends neither on the UME tip radius nor on the initial gap size between tip and substrate. Atomic contacts generated in aqueous solutions of sodium dodecyl sulfate (SDS) below the critical micellar concentration (CMC) have conductances below 1G 0 attributed to molecular adsorption on the contact. In some cases, the nanowires have low conductance, 0.01G 0 . The corresponding I–V curve shows tunneling rather than ohmic behavior, suggesting that molecular junctions are formed with a few surfactant molecules trapped between the two electrodes. Finally, copper nanowires with quantized conductance have been generated using the SECM operating in a four-electrode setup. Thanks to the reference electrode, this configuration leads to better control of the potential of each working electrode; this setup will make it possible to evaluate the conductance variation and/or modulation upon electrochemical stimuli.

  14. Bulk and contact resistances of gas diffusion layers in proton exchange membrane fuel cells

    Science.gov (United States)

    Ye, Donghao; Gauthier, Eric; Benziger, Jay B.; Pan, Mu

    2014-06-01

    A multi-electrode probe is employed to distinguish the bulk and contact resistances of the catalyst layer (CL) and the gas diffusion layer (GDL) with the bipolar plate (BPP). Resistances are compared for Vulcan carbon catalyst layers (CL), carbon paper and carbon cloth GDL materials, and GDLs with microporous layers (MPL). The Vulcan carbon catalyst layer bulk resistance is 100 times greater than the bulk resistance of carbon paper GDL (Toray TG-H-120). Carbon cloth (CCWP) has bulk and contact resistances twice those of carbon paper. Compression of the GDL decreases the GDL contact resistance, but has little effect on the bulk resistance. Treatment of the GDL with polytetrafluoroethylene (PTFE) increases the contact resistance, but has little effect on the bulk resistance. A microporous layer (MPL) added to the GDL decreases the contact resistance, but has little effect on the bulk resistance. An equivalent circuit model shows that for channels less than 1 mm wide the contact resistance is the major source of electronic resistance and is about 10% of the total ohmic resistance associated with the membrane electrode assembly.

  15. Ultraviolet Laser SQUID Microscope for GaN Blue Light Emitting Diode Testing

    International Nuclear Information System (INIS)

    Daibo, M; Kamiwano, D; Kurosawa, T; Yoshizawa, M; Tayama, N

    2006-01-01

    We carried out non-contacting measurements of photocurrent distributions in GaN blue light emitting diode (LED) chips using our newly developed ultraviolet (UV) laser SQUID microscope. The UV light generates the photocurrent, and then the photocurrent induces small magnetic fields around the chip. An off-axis arranged HTS-SQUID magnetometer is employed to detect a vector magnetic field whose typical amplitude is several hundred femto-tesla. Generally, it is difficult to obtain Ohmic contacts for p-type GaN because of the low hole concentration in the p-type epitaxial layer and the lack of any available metal with a higher work function compared with the p-type GaN. Therefore, a traditional probecontacted electrical test is difficult to conduct for wide band gap semiconductors without an adequately annealed electrode. Using the UV-laser SQUID microscope, the photocurrent can be measured without any electrical contact. We show the photocurrent vector map which was reconstructed from measured magnetic fields data. We also demonstrate how we found the position of a defect of the electrical short circuits in the LED chip

  16. INCORPORATING AMBIPOLAR AND OHMIC DIFFUSION IN THE AMR MHD CODE RAMSES

    International Nuclear Information System (INIS)

    Masson, J.; Mulet-Marquis, C.; Chabrier, G.; Teyssier, R.; Hennebelle, P.

    2012-01-01

    We have implemented non-ideal magnetohydrodynamics (MHD) effects in the adaptive mesh refinement code RAMSES, namely, ambipolar diffusion and Ohmic dissipation, as additional source terms in the ideal MHD equations. We describe in details how we have discretized these terms using the adaptive Cartesian mesh, and how the time step is diminished with respect to the ideal case, in order to perform a stable time integration. We have performed a large suite of test runs, featuring the Barenblatt diffusion test, the Ohmic diffusion test, the C-shock test, and the Alfvén wave test. For the latter, we have performed a careful truncation error analysis to estimate the magnitude of the numerical diffusion induced by our Godunov scheme, allowing us to estimate the spatial resolution that is required to address non-ideal MHD effects reliably. We show that our scheme is second-order accurate, and is therefore ideally suited to study non-ideal MHD effects in the context of star formation and molecular cloud dynamics.

  17. Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

    Science.gov (United States)

    Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

    2015-01-01

    We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

  18. Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

    Energy Technology Data Exchange (ETDEWEB)

    Sung, C., E-mail: csung@physics.ucla.edu [University of California, Los Angeles, Los Angeles, California 90095 (United States); White, A. E.; Greenwald, M.; Howard, N. T. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Mikkelsen, D. R.; Churchill, R. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Holland, C. [University of California, San Diego, La Jolla, California 92093 (United States); Theiler, C. [Ecole Polytechnique Fédérale de Lausanne, SPC, Lausanne 1015 (Switzerland)

    2016-04-15

    Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

  19. Electrical and structural properties of a stacked metal layer contact to n-InP

    International Nuclear Information System (INIS)

    Huang, Wen-Chang; Horng, Chia-Tsung

    2011-01-01

    In this study, we found that the double metal contact structure in Pt/Al/n-InP diodes provides better rectification characteristics than conventional single-metal/n-InP Schottky diodes. The effective barrier height was measured to be 0.67 eV for a 400 deg. C-annealed Pt/Al/n-InP diode sample. The increase in the barrier height is attributed to the formation of Al 2 O 3 at the metal/n-InP contact interface during thermal annealing. The formation of the phase Al 2 O 3 phase was monitored by X-ray diffraction (XRD) analysis. The corresponding element profiles of Al and O were also confirmed at the metal/n-InP contact interface using secondary ion mass spectrum (SIMS) analysis. The lowering of the Schottky barrier height due to the inhomogeneity at the metal/n-InP junction is also discussed on the basis of the TE theory. The distribution of local effective Schottky barrier heights was explained by a model incorporating the existence of double Gaussian barrier heights, which represent the high barrier and low barrier of the full distribution in the temperature ranges of 83-198 and 198-300 K.

  20. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

    Science.gov (United States)

    Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

    2017-12-01

    Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

  1. Kinetics of Maillard reactions in model infant formula during UHT treatment using a static batch ohmic heater

    OpenAIRE

    Roux , Stéphanie; Courel , Mathilde; Ait-Ameur , Lamia; Birlouez-Aragon , Inès; Pain , Jean-Pierre

    2009-01-01

    The impact of a UHT treatment on a model infant formula was examined by assessing the advancement of Maillard reactions during a thermal treatment by ohmic heating. The heating and holding steps of the heat treatment were carried out in a static batch ohmic heater equipped with a nitrogen counter-pressure system, allowing reaching five temperature levels from 100 to 140 °C. A heat treatment was characterized by monitoring a holding time at a given temperature. Samples were taken during heatin...

  2. Alternate ohmic heating coil arrangements for compact tokamak

    International Nuclear Information System (INIS)

    Dawson, J.W.; Moretti, A.; Stevens, H.C.; Thompson, K.

    1978-01-01

    The results for a number of ohmic heating (OH) coil arrangements which will allow the reduction of the major radius of Experimental Power Reactor (EPR) tokamaks will be given. In each case the results are compared, at least indirectly, to the reference case, which has the OH solenoid inside the central core of the reactor. The goal for the alternate geometries studied was to stay within the requirements imposed by the EPR conditions on the plasma and to produce as much or more OH V-s as the reference case

  3. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  4. Evolutionary models of early-type contact binary SV Centauri

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Y; Saio, H [Tohoku Univ., Sendai (Japan). Faculty of Science; Sugimoto, Daiichiro

    1978-12-01

    Models of the early-type contact binary system SV Centauri are computed with a binary-star evolution program. The effects of mass exchange, i.e., the effects of mass acceptance as well as mass loss, are properly included. With the initial masses of the component stars as 12.4 and 8.0 M sub(solar mass), the following observed configurations are well reproduced; the component stars are definitely in contact and the rate of mass exchange is 4 x 10/sup -4/ M sub(solar mass)yr/sup -1/. The more massive component is less luminous and has a lower effective temperature. Such features are also reproduced quantitatively. Agreement of the computed models with observation indicates that the binary system SV Cen is actually in the phase of rapid mass exchange preceding the mass-ratio reversal.

  5. Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1998-01-01

    We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

  6. Sawtooth-free Ohmic discharges in ASDEX and the aspects of neoclassical ion transport

    International Nuclear Information System (INIS)

    Stroth, U.; Fussmann, G.; Krieger, K.; Mertens, V.; Wagner, F.; Bessenrodt-Weberpals, M.; Buechse, R.; Giannone, L.; Herrmann, H.; Simmet, E.; Steuer, K.H.

    1991-05-01

    Sawtooth-free Ohmic discharges can serve as a model case for a quiescent Tokamak plasma. We report on the properties and the global parameters of these discharges observed in ASDEX and make comments on the mechanism which seems to be responsible for the stabilization of the sawtooth instability. Stationary Ohmic discharge were used to investigate particle, impurity and energy transport in the absence of the sawtooth instability. Particular emphasis has been devoted to a comparison with the predictions of neoclassical theories. We find that the ion energy transport is on the level predicted by neoclassical theory and can explain particle and impurity transport with neoclassical inward drift velocities and diffusion coefficients with the same small anomalous contribution. In the central region of the plasma, where the power flux is low, very small values were found for the electron heat conductivity. (orig.)

  7. Dynamics of the sub-Ohmic spin-boson model: A time-dependent variational study

    International Nuclear Information System (INIS)

    Wu Ning; Duan Liwei; Zhao Yang; Li Xin

    2013-01-01

    The Dirac-Frenkel time-dependent variation is employed to probe the dynamics of the zero temperature sub-Ohmic spin-boson model with strong friction utilizing the Davydov D 1 ansatz. It is shown that initial conditions of the phonon bath have considerable influence on the dynamics. Counterintuitively, even in the very strong coupling regime, quantum coherence features still manage to survive under the polarized bath initial condition, while such features are absent under the factorized bath initial condition. In addition, a coherent-incoherent transition is found at a critical coupling strength α≈ 0.1 for s= 0.25 under the factorized bath initial condition. We quantify how faithfully our ansatz follows the Schrödinger equation, finding that the time-dependent variational approach is robust for strong dissipation and deep sub-Ohmic baths (s≪ 1).

  8. Electronic Properties of Graphene-PtSe2 Contacts.

    Science.gov (United States)

    Sattar, Shahid; Schwingenschlögl, Udo

    2017-05-10

    In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe 2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe 2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe 2 and a p-type Schottky contact with bilayer PtSe 2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.

  9. Electronic Properties of Graphene–PtSe2 Contacts

    KAUST Repository

    Sattar, Shahid

    2017-04-26

    In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.

  10. Electronic Properties of Graphene–PtSe2 Contacts

    KAUST Repository

    Sattar, Shahid; Schwingenschlö gl, Udo

    2017-01-01

    In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.

  11. Clinical observation on bandage type corneal contact lens applied after pterygium excision combined with fresh amniotic membrane transplantation

    Directory of Open Access Journals (Sweden)

    Bin Zhang

    2018-04-01

    Full Text Available AIM: To evaluate the clinical effect of fresh amniotic membrane transplantation in combination with bandage type corneal contact lens in the treatment of pterygium. METHODS: This study was a prospective analysis of 600 pterygium excision patients(600 cases, 600 eyesin the He Eye Hospital from January 2016 to June 2016. The patients were randomly and evenly divided into two groups: observation group and control group, 300 cases in each group(300 eyes. Observation group wore the bandage type corneal contact lens after surgery and took it down at fifth day. The control group did not. The degree of pain after surgery were evaluated at 2h, 1, 3 and 5d after surgery. The clinical outcomes in these two groups were compared in a 12mo postoperative follow-up observation. RESULTS: There were no significant differences between the observation and control group in the percentage of age and gender and size of the pterygium(P>0.05. After surgery, the degree of pain of treatment group significantly decreased compared to control group, the difference was statistically significant(PP>0.05. CONCLUSION: Bandage contact lenses could significantly release pain response after pterygium excision. But it can not reduce the recurrence rate.

  12. Measurement of the drift velocities of electrons and holes in high-ohmic silicon

    International Nuclear Information System (INIS)

    Scharf, Christian

    2014-02-01

    Measurements of the drift velocities of electrons and holes as a function of the electric field and the temperature in high-ohmic silicon of crystal orientation are presented. Significant differences between our results and literature values are observed. A new parametrization of the mobility is introduced. Current transients of n-type pad diodes, generated by fast laser pulses, were investigated in order to determine the drift velocity of electrons and holes separately. Two diodes of high-ohmic silicon (1.5 kΩcm and 5.5 kΩcm) from different manufacturers were investigated as cross check. The drift velocities were determined at electric fields ranging from 5 kV/cm to 50 kV/cm at temperatures ranging from 233 K to 333 K. The mobility parameters were obtained by fitting a simulation of charge drift in silicon to the measurements. Using the convolution theorem the response function of the read-out circuit was determined with the Fourier transforms of the measurement and the simulation. The simulated transient current pulses with the new mobility parametrization are consistent with the measured ones for the temperature and electric field range investigated here. Additionally, the mobility results from the fit are consistent with the mobility determined using the simpler time-of-flight method in the field range where this method is applicable. However, our measurements show a difference of up to 14 % to the values by Canali et al. (1971). The difference to the mobility parametrization by Jacoboni et al. (1977) is up to 24 % while this parametrization is widely used for simulations of the direction due to the lack of data for silicon.

  13. [Type IV contact allergies in the food processing industry: an update].

    Science.gov (United States)

    Bauer, A; Schubert, S; Geier, J; Mahler, V

    2018-05-02

    The food sector is one of the high-risk areas for occupational irritative and allergic contact eczema. The present work provides an overview of the main allergens as well as sensitization frequencies and risk in various food industry occupations. The literature on type IV sensitization in the food sector is summarized. The relative risk of developing a work-related eczema in food processing is increased by more than 3 times. The comparison group was calculated on the basis of the proportion of documented cases in the IVDK (Informationsverbund Dermatologischer Kliniken) network per 100,000 working persons in relation to the average of the years 2005 and 2010. For this purpose, the average risk of all patients was set as reference to 1. Bakers, pastry chefs, cooks and meat and fish processors are mainly affected. In addition to irritant contact eczema, allergic contact eczema and protein contact dermatitis often occur. Leading haptens (main allergens) are rubber ingredients, but also disinfectants and compositae. Only a few contact allergens are responsible for the majority of job-relevant sensitizations in the food industry.

  14. Investigations of metal contacts to amorphous evaporated Ge films and amorphous sputtered Si films

    International Nuclear Information System (INIS)

    Hafiz, M.; Mgbenu, E.; Tove, P.A.; Norde, H.; Petersson, S.

    1976-02-01

    Amorphous Ge or Si films have been used as ohmic contacts to high-resistivity n-silicon radiation detectors. One interesting property of this contact is that it does not inject minority carriers even when the depletion region extends up to the contact thus generating an extracting field there. The function of this contact is not yet fully explored. One part problem is the role of the metal films used as external contacts to the amorphous film. In this report the function of different contacting metals, such as Au, Al, Cr are investigated by measuring the I-V-characteristics of sandwich structures with two metals on both sides of the amorphous evaporated (Ge) and sputtered (Si) film (of typical thickness 1000 A). It was found that while the symmetric structures Au-αGe-Au and Cr-αGe-Cr were low-resistive (leading to resistivity values of approximately 10 5 Ωcm for the αGe film), Al-αGe-Al structures showed much higher resistance and were also polarity dependent. The former feature was found also for unsymmetric structures, i.e. Cr-αGe-Au, Cr-αGe-Al. (Auth.)

  15. Direct-Current Forced Interruption and Breaking Performance of Spiral-Type Contacts in Aero Applications

    Directory of Open Access Journals (Sweden)

    Wenlei Huo

    2017-05-01

    Full Text Available This paper analyses the transient characteristics and breaking performance of direct-current (DC forced-interruption vacuum interrupters in 270 V power-supply systems. Three stages are identified in forced interruption: the DC-arcing stage, current-commutation stage, and voltage-recovery stage. During the current-commutation stage, the reverse peak-current coefficient k, which is a key design factor, is used to calculate the rate of current at zero-crossing (di/dt. MATLAB/Simulink simulation models are established to obtain the transient characteristics influenced by the forced-commutation branch parameters and the coefficient k. To study the breaking performance of spiral-type contacts, experiments are conducted for different contact materials and arcing times for currents less than 3.5 kA. During the DC-arcing stage, a locally intensive burning arc is observed in the CuW80 contact; however, it is not observed in the CuCr50 contact. On examining the re-ignition interruption results of the CuW80 contact, the intensive burning arc is found to be positioned within a possible re-ignition region. When the arcing time is longer than 1 ms, the intensive burning arc occurs and affects the breaking performance of the spiral-type contacts. If the DC-arcing stage is prolonged, the total arcing energy increases, which leads to a lower breaking capacity.

  16. The development of p-type silicon detectors for the high radiation regions of the LHC

    International Nuclear Information System (INIS)

    Hanlon, M.D.L.

    1998-04-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17±1 is reported, along with a spatial resolution of 14.6±0.2 μm. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22±0.23) x 10 14 per cm 2 . An account of the measurement program is presented along with results on the changes in the effective doping concentration (N eff ) with irradiation and the changes in bulk current. Changes in the effective doping concentration and leakage current for high resistivity p-type material under irradiation were found to be similar to to that of n-type material. Values of α=(3.30±0.08) x 10 -17 A cm -1 for the leakage current parameter and g c =(1.20±0.05)x10 -2 cm -1 for the effective dopant introduction rate were found for this material. The epitaxial material did not perform better than the float zone material for the range of doses studied. Surprising results were obtained for highly irradiated p-type diodes illuminated on the ohmic side with an α-source, in that signals were observed well below the full depletion voltage. The processing that had been used to fabricate the test structures and the initial prototype that was studied in the test beam was based on the process used to fabricate devices on n-type material. Presented in this thesis are the modifications that were made to the process, which centred on the oxidation

  17. Tuning the Schottky contacts in the phosphorene and graphene heterostructure by applying strain.

    Science.gov (United States)

    Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Lin-Zhi; Caii, Meng-Qiu

    2016-07-20

    The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure can be tuned from p-type to n-type by the in-plane compressive strains from -2% to -4%. After analyzing the total band structure and density of states of P atom orbitals, we find that the Schottky barrier height (SBH) is determined by the P-pz orbitals. What is more, the variation of the work function of the phosphorene monolayer and the graphene electrode and the Fermi level shift are the nature of the transition of Schottky barrier from n-type Schottky contact to p-type Schottky contact in the phosphorene and graphene heterostructure under different in-plane strains. We speculate that these are general results of tuning of the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure by controlling the in-plane compressive strains to obtain a promising method to design and fabricate a phosphorene-graphene based field effect transistor.

  18. Contact hyperfine field of the 4p and 4f series elements (rare-earths)

    International Nuclear Information System (INIS)

    Doi, I.

    1973-01-01

    The Coulomb correlation effect in the description of the contact hyperfine magnetic structure was analysed. The hyperfine magnetic structure was calculated from the spin polarized Hartree-Fock formalism, using the free electron gas approximation to the exchange-correlation energy of the 4p series atoms and some atoms and ions of the 4f series. No one of the analysed approximations to the exchange-correlation energy describes satisfactorily the contact hyperfine magnetic structure of the 4p and 4f series elements, which were studied [pt

  19. Evolution of the electron temperature profile of ohmically heated plasmas in TFTR

    International Nuclear Information System (INIS)

    Taylor, G.; Efthimion, P.C.; Arunasalam, V.

    1985-08-01

    Blackbody electron cyclotron emission was used to ascertain and study the evolution and behavior of the electron temperature profile in ohmically heated plasmas in the Tokamak Fusion Test Reactor (TFTR). The emission was measured with absolutely calibrated millimeter wavelength radiometers. The temperature profile normalized to the central temperature and minor radius is observed to broaden substantially with decreasing limiter safety factor q/sub a/, and is insensitive to the plasma minor radius. Sawtooth activity was seen in the core of most TFTR discharges and appeared to be associated with a flattening of the electron temperature profile within the plasma core where q less than or equal to 1. Two types of sawtooth behavior were identified in large TFTR plasmas (minor radius, a less than or equal to 0.8 m) : a typically 35 to 40 msec period ''normal'' sawtooth, and a ''compound'' sawtooth with 70 to 80 msec period

  20. Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

    Science.gov (United States)

    Zhu, Mengjian; Luo, Wei; Wu, Nannan; Zhang, Xue-ao; Qin, Shiqiao

    2018-04-01

    2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ˜1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors.

  1. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

    Directory of Open Access Journals (Sweden)

    Chong-Chong Dai

    2014-04-01

    Full Text Available A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

  2. Effect of the ohmic drop in a RPC-LIKE chamber for measurements of electron transport parameters

    Energy Technology Data Exchange (ETDEWEB)

    Petri, Anna R.; Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: annapetri@usp.br, E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil); Mangiarotti, Alessio, E-mail: alessio@if.usp.br [Universidade de São Paulo (IF/USP), SP (Brazil). Instituto de Física

    2017-07-01

    The main advantage of Resistive Plate Chambers (RPCs), applied, for instance, in High-Energy Experiments and Positron Emission Tomography (PET), is that it is spark-protected due to the presence of, at least, one high resistive electrode. However, the ohmic drop across the latter can affect the charge multiplication significantly. In this work, we investigate this effect in a RPC-like chamber. The counter was filled with nitrogen at atmospheric pressure and the primary ionization was produced by the incidence of nitrogen pulsed laser beam on an aluminum cathode. The illumination area of the cathode was measured using a foil of millimetric paper overlaid on this electrode. In this way, the resistance of the glass anode could be estimated using the known resistivity of the glass (ρ=2×10{sup 12} Ω.cm). Therefore, the voltage drop across the dielectric was calculated by the product of the current across the gas gap and the anode resistance. In order to mitigate the effect of the resistive electrode, the laser beam intensity was limited by interposing metallic meshes between the laser and the chamber window. The dependence of the ohmic drop from the applied voltage was analyzed. The results obtained shown that, without the meshes, the ohmic drop corresponds up to 7% of the applied voltage, preventing the detection system to reach values of density-normalized electric fields in the gas gap (E{sub eff}/N) higher than 166 Td. By minimizing the laser beam intensity and, consequently, the primary ionization, the ohmic drop represented only 0.2% of the applied voltage, extending the E{sub eff} /N range up to 175 Td. (author)

  3. Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

    Directory of Open Access Journals (Sweden)

    Smyntyna V. A.

    2011-11-01

    Full Text Available Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.

  4. A new method for the compensation of ohmic drop in galvanic cells

    NARCIS (Netherlands)

    Kooijman, D.J.; Sluyters, J.H.

    Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

  5. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

    2018-01-01

    that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

  6. Bulk and surface event identification in p-type germanium detectors

    Science.gov (United States)

    Yang, L. T.; Li, H. B.; Wong, H. T.; Agartioglu, M.; Chen, J. H.; Jia, L. P.; Jiang, H.; Li, J.; Lin, F. K.; Lin, S. T.; Liu, S. K.; Ma, J. L.; Sevda, B.; Sharma, V.; Singh, L.; Singh, M. K.; Singh, M. K.; Soma, A. K.; Sonay, A.; Yang, S. W.; Wang, L.; Wang, Q.; Yue, Q.; Zhao, W.

    2018-04-01

    The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.

  7. Valence band states in Si-based p-type delta-doped field effect transistors

    International Nuclear Information System (INIS)

    Martinez-Orozco, J C; Vlaev, Stoyan J

    2009-01-01

    We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  8. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  9. Solar cell contact pull strength as a function of pull-test temperature

    Science.gov (United States)

    Yasui, R. K.; Berman, P. A.

    1972-01-01

    Four types of solar cell contacts were given pull-strength tests at temperatures between -173 and +165 C. Contacts tested were: (1) solder-coated titanium-silver contacts on n-p cells, (2) palladium-containing titanium-silver contacts on n-p cells, (3) titanium-silver contacts on 0.2-mm-thick n-p cells, and (4) solder-coated electroless-nickel-plated contacts on p-n cells. Maximum pull strength was demonstrated at temperatures significantly below the air mass zero cell equilibrium temperature of +60 C. At the lowest temperatures, the chief failure mechanism was silicon fracture along crystallographic planes; at the highest temperatures, it was loss of solder strength. In the intermediate temperatures, many failure mechanisms operated. Pull-strength tests give a good indication of the suitability of solar cell contact systems for space use. Procedures used to maximize the validity of the results are described.

  10. Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

    Science.gov (United States)

    Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

    2017-12-13

    Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

  11. Homogeneous Gaussian Profile P+-Type Emitters: Updated Parameters and Metal-Grid Optimization

    Directory of Open Access Journals (Sweden)

    M. Cid

    2002-10-01

    Full Text Available P+-type emitters were optimized keeping the base parameters constant. Updated internal parameters were considered. The surface recombination velocity was considered variable with the surface doping level. Passivated homogeneous emitters were found to have low emitter recombination density and high collection efficiency. A complete structure p+nn+ was analyzed, taking into account optimized shadowing and metal-contacted factors for laboratory cells as function of the surface doping level and the emitter thickness. The base parameters were kept constant to make the emitter characteristics evident. The most efficient P+-type passivated homogeneous emitters, provide efficiencies around 21% for a wide range of emitter sheet resistivity (50 -- 500 omega/ with the surface doping levels Ns=1×10(19 cm-3 and 5×10(19 cm-3. The output electrical parameters were evaluated considering the recently proposed value n i=9.65×10(9 (cm-3. A non-significant increase of 0.1% in the efficiency was obtained, validating all the conclusions obtained in this work, considering n i=1×10(10 cm-3.

  12. Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Buton, C., E-mail: clement.buton@synchrotron-soleil.fr [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Dawiec, A. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Graber-Bolis, J.; Arnaud, K. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Bérar, J.F.; Blanc, N.; Boudet, N. [Université Grenoble Alpes, Institut NÉEL, F-38042 Grenoble (France); CNRS, Institut NÉEL, F-38042 Grenoble (France); Clémens, J.C.; Debarbieux, F. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Delpierre, P.; Dinkespiler, B. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Gastaldi, T. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Hustache, S. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Morel, C.; Pangaud, P. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Perez-Ponce, H. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Vigeolas, E. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France)

    2014-09-11

    The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and {sup 241}Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented.

  13. Influence of semiconductor surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mirowska, Nella [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)]. E-mail: nella.mirowska@pwr.wroc.pl; Misiewicz, Jan [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2006-06-15

    The Schottky barriers formed by Al on Zn{sub 3}P{sub 2} p-type crystals have been studied. Three types of crystals (monocrystal, large-grain crystal and polycrystal) were used for device fabrication. The samples were separated in two groups according to the type of structure and the methods of surface preparation. The samples from the first group were different in structure (monocrystal, large-grain crystal and polycrystals) but prepared in the same way. Three polycrystals with differently prepared surfaces were collected in the second group. Two samples from this group were also annealed in open air at 523 K for 24 h. Measurements of photovoltaic effect at room temperature were carried out to test the impact of surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts. Substantial differences in shape and intensity of PV signal were observed depending on whether the surface of semiconductor was mechanically polished, chemically etched or/and heat treated. The height of potential barrier, {phi} {sub B}, and optical transitions in semiconductor were determined. The value of {phi} {sub B} changed from 0.747 to 0.767 eV for unheated samples and from 0.724 to 0.755 eV for the heated ones. The quality of semiconductor surface seems to have an essential influence on spectral characteristics of Al-Zn{sub 3}P{sub 2} junctions, especially in the case of polycrystals. It appeared that thorough preliminary mechanical polishing of crystals surface provides quite good photoelectric properties of Al-Zn{sub 3}P{sub 2} junctions.

  14. Magmatic ore deposits in layered intrusions - Descriptive model for reef-type PGE and contact-type Cu-Ni-PGE deposits

    Science.gov (United States)

    Zientek, Michael L.

    2012-01-01

    Layered, ultramafic to mafic intrusions are uncommon in the geologic record, but host magmatic ore deposits containing most of the world's economic concentrations of platinum-group elements (PGE) (figs. 1 and 2). These deposits are mined primarily for their platinum, palladium, and rhodium contents (table 1). Magmatic ore deposits are derived from accumulations of crystals of metallic oxides, or immiscible sulfide, or oxide liquids that formed during the cooling and crystallization of magma, typically with mafic to ultramafic compositions. "PGE reefs" are stratabound PGE-enriched lode mineralization in mafic to ultramafic layered intrusions. The term "reef" is derived from Australian and South African literature for this style of mineralization and used to refer to (1) the rock layer that is mineralized and has distinctive texture or mineralogy (Naldrett, 2004), or (2) the PGE-enriched sulfide mineralization that occurs within the rock layer. For example, Viljoen (1999) broadly defined the Merensky Reef as "a mineralized zone within or closely associated with an unconformity surface in the ultramafic cumulate at the base of the Merensky Cyclic Unit." In this report, we will use the term PGE reef to refer to the PGE-enriched mineralization, not the host rock layer. Within a layered igneous intrusion, reef-type mineralization is laterally persistent along strike, extending for the length of the intrusion, typically tens to hundreds of kilometers. However, the mineralized interval is thin, generally centimeters to meters thick, relative to the stratigraphic thickness of layers in an intrusion that vary from hundreds to thousands of meters. PGE-enriched sulfide mineralization is also found near the contacts or margins of layered mafic to ultramafic intrusions (Iljina and Lee, 2005). This contact-type mineralization consists of disseminated to massive concentrations of iron-copper-nickel-PGE-enriched sulfide mineral concentrations in zones that can be tens to hundreds

  15. Fabrication of a roller type PDMS stamp using SU-8 concave molds and its application for roll contact printing

    International Nuclear Information System (INIS)

    Park, Jongho; Kim, Beomjoon

    2016-01-01

    Continuous fabrication of micropatterns at low-cost is attracting attention in various applications within industrial fields. To meet such demands, we have demonstrated a roll contact printing technique, using roller type polydimethylsiloxane (PDMS) stamps with roll-to-flat and roll-to-roll stages. Roller type PDMS stamps for roll contact printing were fabricated using a custom-made metal support and SU-8 microstructures fabricated on concave substrates as a mold. The molding/casting method which we developed here provided faster and easier fabrication than conventional methods for roller type stamps. Next, roll contact printing was performed using fabricated roller type PDMS stamps with roll-to-flat and roll-to-roll stages. Patterns with minimum widths of 3 μm and 2.1 μm were continuously fabricated for each stage, respectively. In addition, the relationship between applied pressures and dimensional changes of roll contact printed patterns was investigated. Finally, we confirmed that roll contact printing and the new fabrication method for roller stamps presented in this study demonstrated the feasibility for industrial applications. (paper)

  16. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-07-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs.

  17. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    International Nuclear Information System (INIS)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-01-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs

  18. Observations of core toroidal rotation reversals in Alcator C-Mod ohmic L-mode plasmas

    International Nuclear Information System (INIS)

    Rice, J.E.; Reinke, M.L.; Podpaly, Y.A.; Churchill, R.M.; Cziegler, I.; Dominguez, A.; Ennever, P.C.; Fiore, C.L.; Granetz, R.S.; Greenwald, M.J.; Hubbard, A.E.; Hughes, J.W.; Irby, J.H.; Ma, Y.; Marmar, E.S.; McDermott, R.M.; Porkolab, M.; Duval, B.P.; Bortolon, A.; Diamond, P.H.

    2011-01-01

    Direction reversals of intrinsic toroidal rotation have been observed in Alcator C-Mod ohmic L-mode plasmas following modest electron density or toroidal magnetic field ramps. The reversal process occurs in the plasma interior, inside of the q = 3/2 surface. For low density plasmas, the rotation is in the co-current direction, and can reverse to the counter-current direction following an increase in the electron density above a certain threshold. Reversals from the co- to counter-current direction are correlated with a sharp decrease in density fluctuations with k R ≥ 2 cm -1 and with frequencies above 70 kHz. The density at which the rotation reverses increases linearly with plasma current, and decreases with increasing magnetic field. There is a strong correlation between the reversal density and the density at which the global ohmic L-mode energy confinement changes from the linear to the saturated regime.

  19. THREE-DIMENSIONAL ATMOSPHERIC CIRCULATION MODELS OF HD 189733b AND HD 209458b WITH CONSISTENT MAGNETIC DRAG AND OHMIC DISSIPATION

    International Nuclear Information System (INIS)

    Rauscher, Emily; Menou, Kristen

    2013-01-01

    We present the first three-dimensional circulation models for extrasolar gas giant atmospheres with geometrically and energetically consistent treatments of magnetic drag and ohmic dissipation. Atmospheric resistivities are continuously updated and calculated directly from the flow structure, strongly coupling the magnetic effects with the circulation pattern. We model the hot Jupiters HD 189733b (T eq ≈ 1200 K) and HD 209458b (T eq ≈ 1500 K) and test planetary magnetic field strengths from 0 to 30 G. We find that even at B = 3 G the atmospheric structure and circulation of HD 209458b are strongly influenced by magnetic effects, while the cooler HD 189733b remains largely unaffected, even in the case of B = 30 G and super-solar metallicities. Our models of HD 209458b indicate that magnetic effects can substantially slow down atmospheric winds, change circulation and temperature patterns, and alter observable properties. These models establish that longitudinal and latitudinal hot spot offsets, day-night flux contrasts, and planetary radius inflation are interrelated diagnostics of the magnetic induction process occurring in the atmospheres of hot Jupiters and other similarly forced exoplanets. Most of the ohmic heating occurs high in the atmosphere and on the dayside of the planet, while the heating at depth is strongly dependent on the internal heat flux assumed for the planet, with more heating when the deep atmosphere is hot. We compare the ohmic power at depth in our models, and estimates of the ohmic dissipation in the bulk interior (from general scaling laws), to evolutionary models that constrain the amount of heating necessary to explain the inflated radius of HD 209458b. Our results suggest that deep ohmic heating can successfully inflate the radius of HD 209458b for planetary magnetic field strengths of B ≥ 3-10 G.

  20. Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

    Science.gov (United States)

    Maslyanchuk, Olena L.; Solovan, Mykhailo M.; Maistruk, Eduard V.; Brus, Viktor V.; Maryanchuk, Pavlo D.; Gnatyuk, Volodymyr A.; Aoki, Toru

    2018-01-01

    The present paper analyzes the charge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

  1. Manifestation of π-contacts in magnetic field dependence of I-V characteristics for proximity-type 2D Josephson junction array

    International Nuclear Information System (INIS)

    Rivera, V.A.G.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

    2009-01-01

    Results on the temperature and magnetic field dependence of current-voltage characteristics (CVC) are presented for SNS-type 2D ordered array of Nb-Cu 0.95 Al 0.05 -Nb junctions. The critical current I C (T,H) and the power exponent a(T,H)=1+Φ 0 I C (T,H)/2k B T of the nonlinear CVC law V=R[I-I C (T,H)] a(T,H) are found to have a maximum at non-zero value of applied magnetic field H p =225 Oe, which is attributed to manifestation of π-type Josephson contacts in our sample.

  2. Prospecting ideas for mesozoic granite-type, volcanics-type and exo-contact-type uranium deposits in South China. Pt.1

    International Nuclear Information System (INIS)

    Yu Dagan

    2001-01-01

    The Mesozoic uranium ore-formation process in South China resulted from the intense volcanic magmatism, the crust-mantle interaction and the fluidization in Yanshanian period, and there is great prospect for large-scale uranium concentration and ore-formation. Therefore, during the prospecting for Mesozoic granite-type, volcanics-type and exo-contact-type uranium deposits it is necessary to introduce deep-source metallogenic theory, to 'desalt' metallogenic theory of epithermal activation, to fully realize that uranium deposits may be formed not only at shallow depth, but also in conditions of deep-source, great depth and high temperature, as well as in environments of deep-source, shallow depth and median temperature, to give emphasis to the early-stage (130-95 Ma) uranium mineralization, to break the man-made boundary in prospecting for uranium only based on host rock type, to strengthen the research on Cretaceous magmatic system

  3. CONTACT RESISTANCE MODELING

    Directory of Open Access Journals (Sweden)

    S. V. LOSKUTOV

    2018-05-01

    Full Text Available Purpose. To determine the contribution of the real contact spots distribution in the total conductivity of the conductors contact. Methodology. The electrical contact resistance research was carried out on models. The experimental part of this work was done on paper with a graphite layer with membranes (the first type and conductive liquids with discrete partitions (the second type. Findings. It is shown that the contact electrical resistance is mainly determined by the real area of metal contact. The experimental dependence of the electrical resistance of the second type model on the distance between the electrodes and the potential distribution along the sample surface for the first type model were obtained. The theoretical model based on the principle of electric field superposition was considered. The dependences obtained experimentally and calculated by using the theoretical model are in good agreement. Originality. The regularity of the electrical contact resistance formation on a large number of membranes was researched for the first time. A new model of discrete electrical contact based on the liquid as the conducting environment with nuclear membrane partitions was developed. The conclusions of the additivity of contact and bulk electrical resistance were done. Practical value. Based on these researches, a new experimental method of kinetic macroidentation that as a parameter of the metal surface layer deformation uses the real contact area was developed. This method allows to determine the value of average contact stresses, yield point, change of the stress on the depth of deformation depending on the surface treatment.

  4. Effect of Boronization on Ohmic Plasmas in NSTX

    International Nuclear Information System (INIS)

    Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

    2001-01-01

    Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas

  5. An ohmic heating circuit for the CASTOR tokamak

    International Nuclear Information System (INIS)

    Valovic, M.

    1989-07-01

    To extend the duration of the CASTOR tokamak discharge to the limit given by the toroidal magnetic field pulse, a simple ohmic heating circuit is proposed. It exploits two condenser banks charged to different voltages and switched by means of an ignitron switch. The circuit parameters are chosen so as to achieve optimum current ramp-up and flat-top phases. The choice of parameters was checked using a simple computer code, with the nonlinear magnetization of the transformer core being taken into account. The results of calculation are compared with those of an experimental test shot with a discharge current and duration of 19 kA and 40 ms, respectively. (J.U.). 3 figs., 4 refs

  6. Thermodynamics and phase equilibria of ternary systems relevant to contact materials for compound semiconductors

    International Nuclear Information System (INIS)

    Ipser, H.; Richter, K.; Micke, K.

    1997-01-01

    In order to investigate the stability of ohmic contacts to compound semiconductors, it is necessary to know the phase equilibria in the corresponding multi-component systems. We are currently studying the phase equilibria and thermophysical properties of several ternary systems which are of interest in view of the use of nickel, palladium and platinum as contact materials for GaSb and InSb compound semiconductors: Ga-Ni-Sb, In-Ni-Sb, Ga-Pd-Sb and Ga-Pt-Sb. Phase equilibria are investigated by thermal analyses, X-ray powder diffraction methods as well as electron microprobe analysis. Thermodynamic properties are derived from vapour pressure measurements using an isopiestic method. It is planned to combine all information on phase equilibria and thermochemistry for the ternary and the limiting binary systems to perform an optimization of the ternary systems by computer calculations using standard software. (author)

  7. Diagnosis of three types of constant faults in read-once contact networks over finite bases

    KAUST Repository

    Busbait, Monther I.; Moshkov, Mikhail

    2016-01-01

    We study the depth of decision trees for diagnosis of three types of constant faults in read-once contact networks over finite bases containing only indecomposable networks. For each basis and each type of faults, we obtain a linear upper bound

  8. Increased resistance of contact lens related bacterial biofilms to antimicrobial activity of soft contact lens care solutions

    Science.gov (United States)

    Szczotka-Flynn, Loretta B.; Imamura, Yoshifumi; Chandra, Jyotsna; Yu, Changping; Mukherjee, Pranab K.; Pearlman, Eric; Ghannoum, Mahmoud A.

    2014-01-01

    PURPOSE To determine if clinical and reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus form biofilms on silicone hydrogel contact lenses, and ascertain antimicrobial activities of contact lens care solutions. METHODS Clinical and American Type Culture Collection (ATCC) reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus were incubated with lotrafilcon A lenses under conditions that facilitate biofilm formation. Biofilms were quantified by quantitative culturing (colony forming units, CFUs), and gross morphology and architecture were evaluated using scanning electron microscopy (SEM) and confocal microscopy. Susceptibilities of the planktonic and biofilm growth phases of the bacteria to five common multipurpose contact lens care solutions and one hydrogen peroxide care solution were assessed. RESULTS P. aeruginosa, S. marcescens, and S. aureus reference and clinical strains formed biofilms on lotrafilcon A silicone hydrogel contact lenses, as dense networks of cells arranged in multiple layers with visible extracellular matrix. The biofilms were resistant to commonly used biguanide preserved multipurpose care solutions. P. aeruginosa and S. aureus biofilms were susceptible to a hydrogen peroxide and a polyquaternium preserved care solution, whereas S. marcescens biofilm was resistant to a polyquaternium preserved care solution but susceptible to hydrogen peroxide disinfection. In contrast, the planktonic forms were always susceptible. CONCLUSIONS P. aeruginosa, S. marcescens, and S. aureus form biofilms on lotrafilcon A contact lenses, which in contrast to planktonic cells, are resistant to the antimicrobial activity of several soft contact lens care products. PMID:19654521

  9. Contact light-emitting diodes based on vertical ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Panin, G. N. [Dongguk University, Seoul (Korea, Republic of); Russian Academy of Sciences, Chernogolovka, Moscow district (Russian Federation); Cho, H. D.; Lee, S. W.; Kang, T. W. [Dongguk University, Seoul (Korea, Republic of)

    2014-05-15

    We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctions formed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrate and that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98, 093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/pGaN VCLEDs on a large area of about 4 cm{sup 2}. The VCLEDs emitted a pure blue electroluminescence with high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started at small current of about 50 μA and is attributed to the good optical properties of the structurally perfect heterojunctions in the point contacts. The VCLED configuration allows the creation of ZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration of nonradiative defects in the active regions. The VCLEDs showed the high brightness of light required for active matrix displays and general solid-state lighting.

  10. Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

    2017-12-01

    In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

  11. Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

    Science.gov (United States)

    Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

    2017-11-01

    Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

  12. Friction and universal contact area law for randomly rough viscoelastic contacts.

    Science.gov (United States)

    Scaraggi, M; Persson, B N J

    2015-03-18

    We present accurate numerical results for the friction force and the contact area for a viscoelastic solid (rubber) in sliding contact with hard, randomly rough substrates. The rough surfaces are self-affine fractal with roughness over several decades in length scales. We calculate the contribution to the friction from the pulsating deformations induced by the substrate asperities. We also calculate how the area of real contact, A(v, p), depends on the sliding speed v and on the nominal contact pressure p, and we show how the contact area for any sliding speed can be obtained from a universal master curve A(p). The numerical results are found to be in good agreement with the predictions of an analytical contact mechanics theory.

  13. Two types of photomultiplier voltage dividers for high and changing count rates

    International Nuclear Information System (INIS)

    Reiter, W.L.; Stengl, G.

    1980-01-01

    We report on the design of two types of voltage distribution circuits for high stability photomultiplier operation. 'Type A' voltage divider is an ohmic voltage divider with high bleeder current (up to 10 mA) and the resistor chain split at one of the last dynodes, usually the dynode where the analog signal is derived from. This simple constructive measure improves the stability of the dynode voltage by a factor of 5 compared with an unsplit conventional resistor chain. 'Type B' is a novel active voltage divider using cold cathode tubes ar regulating elements. This voltage divider exhibits excellent temperature stability (about 10 -4 / 0 C). With 'type B' an equal stability compared with conventional ohmic dividers can be achieved at a bleeder current smaller by one order of magnitude. Of course both concepts, 'type A' and 'type B', can be combined. (orig.)

  14. pH triggered controlled drug delivery from contact lenses: Addressing the challenges of drug leaching during sterilization and storage.

    Science.gov (United States)

    Maulvi, Furqan A; Choksi, Harsh H; Desai, Ankita R; Patel, Akanksha S; Ranch, Ketan M; Vyas, Bhavin A; Shah, Dinesh O

    2017-09-01

    In the present work a novel cyclosporine-loaded Eudragit S100 (pH-sensitive) nanoparticles-laden contact lenses were designed to provide sustained release of cyclosporine at therapeutic rates, without leaching of drug during sterilization and storage period (shelf life). The nanoparticles were prepared by Quasi-emulsion solvent diffusion technique using different weight ratios of cyclosporine to Eudragit S100. The contact lenses with direct drug entrapment were also fabricated (DL-50) for comparison. The percentage swelling and optical transparency of nanoparticles-laden contact lenses were improved in comparison to DL-50 lenses. The nanoparticles-laden contact lenses showed sustained drug release profiles, with inverse relationship to the amount of nanoparticles loaded in the contact lenses. It was interesting to note that nanoparticles form nanochannels/cavities after dissolution of Eudragit S 100 in tear fluid pH=7.4 (in vitro release study). This followed the precipitation of drug in hydrogel matrix of contact lenses. As the amount of nanoparticles loading increased, more number of cavities were formed, which caused the formation of large cavities in contact lens matrix. This in turn precipitated the drug. The nanoparticles-laden contact lenses with 1:1 (drug: Eudragit) weight ratio showed the most promising results of sustaining the drug release up to 156h, without affecting optical and physical properties of contact lenses. Packaging study confirmed that the drug was not leached in packaging solution (buffer, pH=6.5) from nanoparticles-laden lenses during shelf life period. In-vivo study in rabbit tear fluid showed sustained release up to 14days. The study revealed the application of pH-sensitive nanoparticles-laden contact lenses for controlled release of cyclosporine without altering the optical and physical properties of lens material. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

    Science.gov (United States)

    Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

    2015-08-05

    Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

  16. Zn/sub 3/P/sub 2/ as a new low cost high efficiency solar cell material. First quarterly report, September 1-November 30, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Catalano, A.

    1978-01-01

    During this quarter work was initiated on the development of Zn/sub 3/P/sub 2/ semiconductor heterojunctions. The selection of suitable semiconductor heterojunctions was based on: (1) electrical and optical properties; (2) crystal structure; (3) chemical and physical compatability; and (4) material availability. Candidates fall into two categories: (a) non-isostructural semiconductors which have previously been extensively studied, for which considerable literature exists; and (b) the isostructural but generally less well studied n-type II/sub B/-V/sub A/ semiconductors. Two materials were selected for the study, ZnS and (Zn/sub 1-x/Cd/sub x/)/sub 3/P/sub 2/. ZnS films were prepared by thermal evaporation in vacuum, and were doped by co-evaporation from an aluminum source. Several methods for the synthesis of (Zn/sub 1-x/Cd/sub x/)/sub 3/P/sub 2/ alloys were explored but best results were obtained by sintering weighed quantities of Zn/sub 3/P/sub 2/ and Cd/sub 3/P/sub 2/. The thin film device development effort focused on the further development of a substrate which would be suitable for film growth and provide low sheet resistance ohmic back contact for devices. Mica substrates covered with successive layers of a metal and carbon were used. Despite growth temperature of 575/sup 0/C the capacitance measurements indicate the films are unaffected by the metal contact. Fabrication of Schottky barrier grid devices was begun but the rough film surface resulted in poor yields from the photolithograhic process. A model of the Schottky barrier grid device, relating geometrical considerations to collection efficiency has been developed and experimentally tested.

  17. Occupational contact urticaria and protein contact dermatitis.

    Science.gov (United States)

    Doutre, Marie-Sylvie

    2005-01-01

    Irritant dermatitis and eczema are the most prevalent occupational skin diseases. Less common are immediate contact reactions such as contact urticaria and protein contact dermatitis. Occupational contact urticaria can be subdivided into two categories, immunological and non immunological. However, some agents can induce these two types of reactions. Contact urticaria to natural rubber latex is particularly frequent among health care personnel, but contact urticaria to a wide variety of other substances occurs in many other occupations. Among those at risk are cooks, bakers, butchers, restaurant personnel, veterinarians, hairdressers, florists, gardeners, and forestry workers. Protein contact dermatitis in some of these occupations is caused principally by proteins of animal or plant origin, especially among individuals with a history of atopic dermatitis. Diagnosis requires careful interrogation, clinical examination and skin tests (open tests and prick tests with immediate lecture) to identify a particular contact allergen.

  18. Laser diode with thermal conducting, current confining film

    Science.gov (United States)

    Hawrylo, Frank Z. (Inventor)

    1980-01-01

    A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.

  19. Intermittent fluctuations in the Alcator C-Mod scrape-off layer for ohmic and high confinement mode plasmas

    Science.gov (United States)

    Garcia, O. E.; Kube, R.; Theodorsen, A.; LaBombard, B.; Terry, J. L.

    2018-05-01

    Plasma fluctuations in the scrape-off layer of the Alcator C-Mod tokamak in ohmic and high confinement modes have been analyzed using gas puff imaging data. In all cases investigated, the time series of emission from a single spatially resolved view into the gas puff are dominated by large-amplitude bursts, attributed to blob-like filament structures moving radially outwards and poloidally. There is a remarkable similarity of the fluctuation statistics in ohmic plasmas and in edge localized mode-free and enhanced D-alpha high confinement mode plasmas. Conditionally averaged waveforms have a two-sided exponential shape with comparable temporal scales and asymmetry, while the burst amplitudes and the waiting times between them are exponentially distributed. The probability density functions and the frequency power spectral densities are similar for all these confinement modes. These results provide strong evidence in support of a stochastic model describing the plasma fluctuations in the scrape-off layer as a super-position of uncorrelated exponential pulses. Predictions of this model are in excellent agreement with experimental measurements in both ohmic and high confinement mode plasmas. The stochastic model thus provides a valuable tool for predicting fluctuation-induced plasma-wall interactions in magnetically confined fusion plasmas.

  20. Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

    Science.gov (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2016-09-23

    InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

  1. Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2012-03-15

    Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

    OpenAIRE

    Reta; Mursalim; Salengke; Junaedi, M.; Mariati; Sopade, P.

    2017-01-01

    Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has...

  3. Direct high-temperature ohmic heating of metals as liquid pipes.

    Science.gov (United States)

    Grosse, A V; Cahill, J A; Liddell, W L; Murphy, W J; Stokes, C S

    1968-05-03

    When a sufficiently high electric current is passed through a liquid metal, the electromagnetic pressure pinches off the liquid metal and interrupts the flow of current. For the first time the pinch effect has been overcome by use of centrifugal acceleration. By rotation of a pipe of liquid metal, tin or bismuth or their alloys, at sufficiently high speed, it can be heated electrically without intermission of the electric current. One may now heat liquid metallic substances, by resistive (ohmic) heating, to 5000 degrees K and perhaps higher temperatures.

  4. Contact Dermatitis in Pediatrics.

    Science.gov (United States)

    Pelletier, Janice L; Perez, Caroline; Jacob, Sharon E

    2016-08-01

    Contact dermatitis is an umbrella term that describes the skin's reaction to contacted noxious or allergenic substances. The two main categories of contact dermatitis are irritant type and allergic type. This review discusses the signs, symptoms, causes, and complications of contact dermatitis. It addresses the testing, treatment, and prevention of contact dermatitis. Proper management of contact dermatitis includes avoidance measures for susceptible children. Implementation of a nickel directive (regulating the use of nickel in jewelry and other products that come into contact with the skin) could further reduce exposure to the most common allergens in the pediatric population. [Pediatr Ann. 2016;45(8):e287-e292.]. Copyright 2016, SLACK Incorporated.

  5. High performance p-type segmented leg of misfit-layered cobaltite and half-Heusler alloy

    International Nuclear Information System (INIS)

    Hung, Le Thanh; Van Nong, Ngo; Snyder, G. Jeffrey; Viet, Man Hoang; Balke, Benjamin; Han, Li; Stamate, Eugen; Linderoth, Søren; Pryds, Nini

    2015-01-01

    Highlights: • p-type segmented leg of oxide and half-Heusler was for the first time demonstrated. • The maximum conversion efficiency reached a value of about 5%. • The results are among the highest reported values so far for oxide-based legs. • Oxide-based segmented leg is very promising for generating electricity. - Abstract: In this study, a segmented p-type leg of doped misfit-layered cobaltite Ca 2.8 Lu 0.15 Ag 0.05 Co 4 O 9+δ and half-Heusler Ti 0.3 Zr 0.35 Hf 0.35 CoSb 0.8 Sn 0.2 alloy was fabricated and characterized. The thermoelectric properties of single components, segmented leg, and the electrical contact resistance of the joint part were measured as a function of temperature. The output power generation characteristics of segmented legs were characterized in air under various temperature gradients, ΔT, with the hot side temperature up to 1153 K. At ΔT ≈ 756 K, the maximum conversion efficiency reached a value of ∼5%, which is about 65% of that expected from the materials without parasitic losses. The long-term stability investigation for two weeks at the hot and cold side temperatures of 1153/397 K shows that the segmented leg has good durability as a result of stable and low electrical resistance contacts

  6. P-adic Schroedinger type equation

    International Nuclear Information System (INIS)

    Vladimirov, V.S.; Volovich, I.V.

    1988-12-01

    In p-adic quantum mechanics a Schroedinger type equation is considered. We discuss the appropriate notion of differential operators. A solution of the Schroedinger type equation is given. A new set of vacuum states for the p-adic quantum harmonic oscillator is presented. The correspondence principle with the standard quantum mechanics is discussed. (orig.)

  7. Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

    International Nuclear Information System (INIS)

    Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

    2010-01-01

    oxidation zinc nitride the film converted to p-type zinc oxide and the film became more transparent. During the oxidation process at each temperature Hall measurements were made to determine carrier type, carrier concentration, mobility and resistivity. Hall effect measurements indicated that ZnO films were p-type, the reliable results obtained for carrier concentration and mobility. Hall effect measurements proved that after annealing at 350 degrees Celsium up to 500 degrees Celsium the film was p-type. By increasing the oxidation temperature over 550 degrees Celsium the ZnO thin films turned into n-type due to the loss of N atoms in the film. Room temperature photoluminescence measurements were performed to investigate doping and impurity level of these films. The deposited best quality n and p type ZnO thin films were used to produce hetero and homojunctions. p-type ZnO deposited on the n-type Si substrate and aluminum or indium was evaporated as metal contacts (n-p). On the other hand n-type ZnO deposited on p-type Si substrate for p-n structure. In the case of homo-junction both n and p-type ZnO thin films were deposited on glass substrates with Al contacts. Current-Voltage characteristics of these devices were determined and the typical result for p-n hetero-junction was shown here

  8. Formation of an internal transport barrier in the ohmic H-mode in the TUMAN-3M tokamak

    International Nuclear Information System (INIS)

    Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Zhubr, N.A.; Kornev, V.A.; Krikunov, S.V.; Lebedev, S.V.; Levin, L.S.; Razdobarin, G.T.; Rozhdestvensky, V.V.; Smirnov, A.I.; Tukachinsky, A.S.; Yaroshevich, S.P.

    2000-01-01

    In experiments on studying the ohmic H-mode in the TUMAN-3M tokamak, it is found that, in high-current (I p ∼ 120-170 kA) discharges, a region with high electron-temperature and density gradients is formed in the plasma core. In this case, the energy confinement time τ E attains 9-18 ms, which is nearly twice as large as that predicted by the ELM-free ITER-93H scaling. This is evidence that the internal transport barrier in a plasma can exist without auxiliary heating. Calculations of the effective thermal diffusivity by the ASTRA transport code demonstrate a strong suppression of heat transport in the region where the temperature and density gradients are high

  9. Modelling ohmic confinement experiments on the START tokamak

    International Nuclear Information System (INIS)

    Roach, C.M.

    1996-05-01

    Ohmic confinement data from the tight aspect ratio tokamak START has been analysed using the ASTRA transport simulation code. Neoclassical expressions have been modified to describe tight aspect ratio configurations, and the comparison between START data and models of anomalous transport has been made quantitative using the standard χ 2 test from statistics. Four confinement models (T11, Rebut-Lallia-Watkins, Lackner-Gottardi, and Taroni et al's Bohm model) have been compared with the START data. Three of the models are found to simulate START's electron temperature data moderately well, while Taroni et al's Bohm model overestimates electron temperatures in START by an order of magnitude. Thus comparison with START data tends to discriminate against Bohm models; these models are pessimistic or ITER. (author)

  10. Chemical-free n-type and p-type multilayer-graphene transistors

    Energy Technology Data Exchange (ETDEWEB)

    Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  11. Effect of ordered mesoporous carbon contact layer on the sensing performance of sputtered RuO2 thin film pH sensor.

    Science.gov (United States)

    Lonsdale, W; Maurya, D K; Wajrak, M; Alameh, K

    2017-03-01

    The effect of contact layer on the pH sensing performance of a sputtered RuO 2 thin film pH sensor is investigated. The response of pH sensors employing RuO 2 thin film electrodes on screen-printed Pt, carbon and ordered mesoporous carbon (OMC) contact layers are measured over a pH range from 4 to 10. Working electrodes with OMC contact layer are found to have Nernstian pH sensitivity (-58.4mV/pH), low short-term drift rate (5.0mV/h), low hysteresis values (1.13mV) and fast reaction times (30s), after only 1h of conditioning. A pH sensor constructed with OMC carbon contact layer displays improved sensing performance compared to Pt and carbon-based counterparts, making this electrode more attractive for applications requiring highly-accurate pH sensing with reduced conditioning time. Copyright © 2016 Elsevier B.V. All rights reserved.

  12. Intergroup contact and religiosity as predictor of between group attitudes in conflict environment

    Directory of Open Access Journals (Sweden)

    Lalić Bojan R.

    2013-01-01

    Full Text Available The aim of this research was to identify relations between level of religiosity and level of contact on one side and social attitudes towards members of religious out-groups in conflict environment on the other side. This research was conducted on the sample of Christian Orthodox students in Kosovska Mitrovica (which is partially conflict environment and the Muslims were the out-group towards whom attitudes were analyzed. Attitudes measures we used were social distance scale and semantic differential. Likert type scale was used for religiosity measure, quantity and quality of contact. Controlled variables in this research were: gender, age and social status. Results showed that significant amount of variance was explained by independent variables (R2=.270, F(7,779=9.241, p=.000 for semantic differential and R2=.306, F(5,105=9.241, p=.000. However, there is no significant correlation between religiosity and attitude level towards Muslims. Most of the variance for semantic differential was explained by quality of contact (R2=.255, F(1,109=37,285, p=.000 and this was the only significant predictor for this attitude measure. Quantity of contact was significant predictor for social distance attitude measure, with highest incremental value - calculated by hierarchical linear regression (R2change=.216, F(l,109=30,076, p=.000. Following predictor was quality of contact (R2????????=.049, F(l,108=7,269, p=.008 and the last predictor was sex, with the lowest incremental value (R2=.034, F(1,107=5,159, p=.025. These results are interpreted by probable existence of several types of religiosity. There is possibility that general religiosity we measured in this research, was influenced by different types of religiosity, which could be the reason why correlation was not identified. Correlation between quality of contact confirms results published by other authors (Allport, Pettigrew who claimed that contact by itself cannot diminish prejudices and lead to change

  13. Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

    Science.gov (United States)

    Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

    2008-08-22

    In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

  14. Photometric studies of two solar type marginal contact binaries in the Small Magellanic Cloud

    Science.gov (United States)

    Shanti Priya, Devarapalli; Rukmini, Jagirdar

    2018-04-01

    Using the Optical Gravitational Lensing Experiment catalogue, two contact binaries were studied using data in the V and I bands. The photometric solutions for the V and I bands are presented for two contact binaries OGLE 003835.24-735413.2 (V1) and OGLE 004619.65-725056.2 (V2) in Small Maglellanic Cloud. The presented light curves are analyzed using the Wilson-Devinney code. The results show that the variables are in good thermal and marginal geometrical contact with features like the O’Connell effect in V1. The absolute dimensions are estimated and its dynamical evolution is inferred. They tend to be solar type marginal contact binaries. The 3.6-m Devasthal Optical Telescope and the 4.0-m International Liquid Mirror Telescope of the Aryabhatta Research Institute of Observational Sciences (ARIES, Nainithal) can facilitate the continuous monitoring of such kind of objects which will help in finding the reasons behind their period changes and their impact on the evolution of the clusters.

  15. Understanding the Electronic Structure of the a-B5C:Hx-to-Metal Interface

    Science.gov (United States)

    2016-06-01

    band lineup arguments, it was concluded that Cu should form a reasonable ohmic contact, but that Ni or Pd may be better suited as a hole injection...ohmic,’ which does not necessarily imply good band lineup or accumulation layer formation (typical markers of injecting/ohmic contacts), but rather a...for Identification of SNM in Unknown Shielding Configurations.’ HDTRA1-10-1-0092 Final Report 71 (4) Michelle M. Paquette – Promotion from

  16. Empirical scaling for present Ohmically heated tokamaks

    International Nuclear Information System (INIS)

    Daughney, C.

    1975-01-01

    Experimental results from the Adiabatic Toroidal Compressor (ATC) tokamak are used to obtain empirical scaling laws for the average electron temperature and electron energy confinement time as functions of the average electron density, the effective ion charge, and the plasma current. These scaling laws are extended to include dependence upon minor and major plasma radius and toroidal field strength through a comparison of the various tokamaks described in the literature. Electron thermal conductivity is the dominant loss process for the ATC tokamak. The parametric dependences of the observed electron thermal conductivity are not explained by present theoretical considerations. The electron temperature obtained with Ohmic heating is shown to be a function of current density - which will not be increased in the next generation of large tokamaks. However, the temperature dependence of the electron energy confinement time suggests that significant improvement in confinement time will be obtained with supplementary electron heating. (author)

  17. Ohmic Heating System for the TFTR Tokamak

    International Nuclear Information System (INIS)

    Petree, F.; Cassel, R.

    1977-01-01

    The TFTR Ohmic Heating (OH) System will apply 140,000 volt impulses upon the OH coils to start the plasma. In order to reduce the voltage stress to ground on the OH coils to 12 kV without changing the magnetic field induced by the OH system in the plasma, six d-c current interrupters will be applied to six entry points in the OH coil system. And in order to impart a nearly rectangular shape to these impulses, the voltage determining elements will be nonlinear resistances placed in parallel with the interrupters. These nonlinear resistors, made of semiconducting material, are not normally used in repetitive or continuous duty, and their proper functioning is crucial to the reliable operation of the system. The system described herein, is being revised owing to the impact of revisions to the Toroidal Field Coil System, and to refinements to the OH System design

  18. Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

    Science.gov (United States)

    Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

    2017-06-07

    We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

  19. Transport simulations of ohmic TFTR experiments with profile-consistent microinstability-based models for chi/sub e/ and chi/sub i/

    International Nuclear Information System (INIS)

    Redi, M.H.; Tang, W.M.; Efthimion, P.C.; Mikkelsen, D.R.; Schmidt, G.L.

    1987-03-01

    Transport simulations of ohmically heated TFTR experiments with recently developed profile-consistent microinstability models for the anomalous thermal diffusivities, chi/sub e/ and chi/sub i/, give good agreement with experimental data. The steady-state temperature profiles and the total energy confinement times, tau/sub e/, were found to agree for each of the ohmic TFTR experiments simulated, including three high radiation cases and two plasmas fueled by pellet injection. Both collisional and collisionless models are tested. The trapped-electron drift wave microinstability model results are consistent with the thermal confinement of large plasma ohmic experiments on TFTR. We also find that transport due to the toroidal ion temperature gradient (eta/sub i/) modes can cause saturation in tau/sub E/ at the highest densities comparable to that observed on TFTR and equivalent to a neoclassical anomaly factor of 3. Predictions based on stabilized eta/sub i/-mode-driven ion transport are found to be in agreement with the enhanced global energy confinement times for pellet-fueled plasmas. 33 refs., 26 figs., 4 tabs

  20. Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

    International Nuclear Information System (INIS)

    Raghavan, A.; DebRoy, T.; Palmer, T. A.

    2014-01-01

    Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO 2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

  1. Evolution of plant P-type ATPases

    Directory of Open Access Journals (Sweden)

    Christian N.S. Pedersen

    2012-02-01

    Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

  2. Defect study in ZnO related structures-A multi-spectroscopic approach

    International Nuclear Information System (INIS)

    Ling, C.C.; Cheung, C.K.; Gu, Q.L.; Dai, X.M.; Xu, S.J.; Zhu, C.Y.; Luo, J.M.; Zhu, C.Y.; Tam, K.H.; Djurisic, A.B.; Beling, C.D.; Fung, S.; Lu, L.W.; Brauer, G.; Anwand, W.; Skorupa, W.; Ong, H.C.

    2008-01-01

    ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2 O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure

  3. Defect study in ZnO related structures-A multi-spectroscopic approach

    Energy Technology Data Exchange (ETDEWEB)

    Ling, C.C. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)], E-mail: ccling@hku.hk; Cheung, C.K.; Gu, Q.L.; Dai, X.M.; Xu, S.J.; Zhu, C.Y.; Luo, J.M.; Zhu, C.Y.; Tam, K.H.; Djurisic, A.B.; Beling, C.D.; Fung, S.; Lu, L.W. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Brauer, G.; Anwand, W.; Skorupa, W. [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Ong, H.C. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China)

    2008-10-31

    ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H{sub 2}O{sub 2} pre-treatment induced ohmic to rectifying contact conversion on Au/n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure.

  4. Defect study in ZnO related structures—A multi-spectroscopic approach

    Science.gov (United States)

    Ling, C. C.; Cheung, C. K.; Gu, Q. L.; Dai, X. M.; Xu, S. J.; Zhu, C. Y.; Luo, J. M.; Zhu, C. Y.; Tam, K. H.; Djurišić, A. B.; Beling, C. D.; Fung, S.; Lu, L. W.; Brauer, G.; Anwand, W.; Skorupa, W.; Ong, H. C.

    2008-10-01

    ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/ n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure.

  5. Very low Schottky barrier height at carbon nanotube and silicon carbide interface

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2015-03-23

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

  6. Axial p-n junction and space charge limited current in single GaN nanowire

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-01

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  7. Axial p-n junction and space charge limited current in single GaN nanowire.

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-05

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  8. On Ni/Au Alloyed Contacts to Mg-Doped GaN

    Science.gov (United States)

    Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2018-01-01

    Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

  9. Electrochemistry of conductive polymers 39. Contacts between conducting polymers and noble metal nanoparticles studied by current-sensing atomic force microscopy.

    Science.gov (United States)

    Cho, Shin Hyo; Park, Su-Moon

    2006-12-28

    Electrical properties of contacts formed between conducting polymers and noble metal nanoparticles have been examined using current-sensing atomic force microscopy (CS-AFM). Contacts formed between electrochemically prepared pi-conjugated polymer films such as polypyrrole (PPy), poly(3-methylthiophene) (P3MeT), as well as poly(3,4-ethylenedioxythiophene) (PEDOT) and noble metal nanoparticles including platinum (Pt), gold (Au), and silver (Ag) have been examined. The Pt nanoparticles were electrochemically deposited on a pre-coated PPy film surface by reducing a platinum precursor (PtCl62-) at a constant potential. Both current and scanning electron microscopic images of the film showed the presence of Pt islands. The Au and Ag nanoparticles were dispersed on the P3MeT and PEDOT film surfaces simply by dipping the polymer films into colloid solutions containing Au or Ag particles for specified periods (5 to approximately 10 min). The deposition of Au or Ag particles resulted from either their physical adsorption or chemical bonding between particles and the polymer surface depending on the polymer. When compared with PPy, P3MeT and PEDOT showed a stronger binding to Au or Ag nanoparticles when dipped in their colloidal solutions for the same period. This indicates that Au and Ag particles are predominantly linked with the sulfur atoms via chemical bonding. Of the two, PEDOT was more conductive at the sites where the particles are connected to the polymer. It appears that PEDOT has better aligned sulfur atoms on the surface and is strongly bonded to Au and Ag nanoparticles due to their strong affinity to gold and silver. The current-voltage curves obtained at the metal islands demonstrate that the contacts between these metal islands and polymers are ohmic.

  10. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

    International Nuclear Information System (INIS)

    Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

    2005-01-01

    We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

  11. Effect of frequency and waveform on inactivation of Escherichia coli O157:H7 and Salmonella enterica Serovar Typhimurium in salsa by ohmic heating.

    Science.gov (United States)

    Lee, Su-Yeon; Ryu, Sangryeol; Kang, Dong-Hyun

    2013-01-01

    The effect of frequency of alternating current during ohmic heating on electrode corrosion, heating rate, inactivation of food-borne pathogens, and quality of salsa was investigated. The impact of waveform on heating rate was also investigated. Salsa was treated with various frequencies (60 Hz to 20 kHz) and waveforms (sine, square, and sawtooth) at a constant electric field strength of 12.5 V/cm. Electrode corrosion did not occur when the frequency exceeded 1 kHz. The heating rate of the sample was dependent on frequency up to 500 Hz, but there was no significant difference (P > 0.05) in the heating rate when the frequency was increased above 1 kHz. The electrical conductivity of the sample increased with a rise in the frequency. At a frequency of 60 Hz, the square wave produced a lower heating rate than that of sine and sawtooth waves. The heating rate between waveforms was not significantly (P > 0.05) different when the frequency was >500 Hz. As the frequency increased, the treatment time required to reduce Escherichia coli O157:H7 and Salmonella enterica serovar Typhimurium to below the detection limit (1 log CFU/g) decreased without affecting product quality. These results suggest that ohmic heating can be effectively used to pasteurize salsa and that the effect of inactivation is dependent on frequency and electrical conductivity rather than waveform.

  12. Current knowledge on biomarkers for contact sensitization and allergic contact dermatitis

    NARCIS (Netherlands)

    Koppes, Sjors A.; Engebretsen, Kristiane A.; Agner, Tove; Angelova-Fischer, Irena; Berents, Teresa; Brandner, Johanna; Brans, Richard; Clausen, Maja-Lisa; Hummler, Edith; Jakasa, Ivone; Jurakić-Tončic, Ružica; John, Swen M.; Khnykin, Denis; Molin, Sonja; Holm, Jan O.; Suomela, Sari; Thierse, Hermann-Josef; Kezic, Sanja; Martin, Stefan F.; Thyssen, Jacob P.

    2017-01-01

    Contact sensitization is common and affects up to 20% of the general population. The clinical manifestation of contact sensitization is allergic contact dermatitis. This is a clinical expression that is sometimes difficult to distinguish from other types of dermatitis, for example irritant and

  13. Metal contacts on ZnSe and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Duxstad, Kristin Joy [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  14. Synthesis of p-type GaN nanowires.

    Science.gov (United States)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-09-21

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

  15. Structural analysis of equilibrium and ohmic heating coil assemblies for the TFTR

    International Nuclear Information System (INIS)

    Chattopadhyay, S.

    1975-10-01

    The structural adequacy of the equilibrium and ohmic heating coils and their support systems for the TFTR device has been investigated. The capability of the coils to span ribs of the support structure has been established. The support structure has been found to be effective in resisting the magnetic forces in the coils. The bands encircling the outboard coils and the band tensioning devices have been found to perform adequately. The analysis is based on October 1975 conceptual design

  16. Ohmically heated toroidal experiment (OHTE) mobile ignition test reactor facility concept study

    International Nuclear Information System (INIS)

    Masson, L.S.; Watts, K.D.; Piscitella, R.R.; Sekot, J.P.; Drexler, R.L.

    1983-02-01

    This report presents the results of a study to evaluate the use of an existing nuclear test complex at the Idaho National Engineering Laboratory (INEL) for the assembly, testing, and remote maintenance of the ohmically heated toroidal experiment (OHTE) compact reactor. The portable reactor concept is described and its application to OHTE testing and maintenance requirements is developed. Pertinent INEL facilities are described and several test system configurations that apply to these facilities are developed and evaluated

  17. Investigation into the effects of surface stripping ZnO nanosheets

    Science.gov (United States)

    Barnett, Chris J.; Jackson, Georgina; Jones, Daniel R.; Lewis, Aled R.; Welsby, Kathryn; Evans, Jon E.; McGettrick, James D.; Watson, Trystan; Maffeis, Thierry G. G.; Dunstan, Peter R.; Barron, Andrew R.; Cobley, Richard J.

    2018-04-01

    ZnO nanosheets are polycrystalline nanostructures that are used in devices including solar cells and gas sensors. However, for efficient and reproducible device operation and contact behaviour the conductivity characteristics must be controlled and surface contaminants removed. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanosheets altering the contact type from near-ohmic to rectifying by removing the donor-type defects, which photoluminescence shows to be concentrated in the near-surface. Controlled doses of argon treatments allow nanosheets to be customised for device formation.

  18. Piezoresistance in p-type silicon revisited

    DEFF Research Database (Denmark)

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find...... to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be used to predict the piezoresistance effect in p-type silicon. ©2008 American Institute of Physics...... that the relaxation-time model needs to include all scattering mechanisms in order to obtain correct temperature and acceptor density dependencies. The k·p results are compared to results obtained using a recent tight-binding (TB) model. The magnitude of the pi44 piezocoefficient obtained from the TB model...

  19. Superconductivity in Ti3P-type compounds

    International Nuclear Information System (INIS)

    Wills, J.O.; Hein, R.A.; Waterstrat, R.M.

    1978-01-01

    A study of 12 intermetallic A 3 B compounds which crsytallize in the tetragonal Ti 3 P-type structure has revealed five new superconductors with transition temperatures below 1 K: Zr 3 Si, Zr 3 Ge, Zr 3 P, V 3 P, and Nb 3 Ge (extrapolated from the alloy series Nb-Ge-As). In addition, two compounds, Zr 3 Sb and Ta 3 Ge, having the Ni 3 P structure type are found to be superconducting below 1 K. Within the Ti 3 P-type compounds, those with the lighter ''B'' elements in a given column of the Periodic Table have the higher transition temperatures. Critical-magnetic-field and electrical-resistivity data are reported for the superconducting Ti 2 P-type compound Nb 3 P, which permit one to estimate the Ginzburg-Landau kappa parameter and the electronic-specific-heat coefficient γ. The kappa value of 8.4 indicates that this material is type II, and the γ value of 1.3 mJ/mole K 2 for Nb 3 P is probably related to its low transition temperature relative to many A15 compounds

  20. Effects of intestinal bacteria-derived p-cresyl sulfate on Th1-type immune response in vivo and in vitro

    International Nuclear Information System (INIS)

    Shiba, Takahiro; Kawakami, Koji; Sasaki, Takashi; Makino, Ikuyo; Kato, Ikuo; Kobayashi, Toshihide; Uchida, Kazumi; Kaneko, Kimiyuki

    2014-01-01

    Protein fermentation by intestinal bacteria generates various compounds that are not synthesized by their hosts. An example is p-cresol, which is produced from tyrosine. Patients with chronic kidney disease (CKD) accumulate high concentrations of intestinal bacteria-derived p-cresyl sulfate (pCS), which is the major metabolite of p-cresol, in their blood, and this accumulation contributes to certain CKD-associated disorders. Immune dysfunction is a CKD-associated disorder that frequently contributes to infectious diseases among CKD patients. Although some studies imply pCS as an etiological factor, the relation between pCS and immune systems is poorly understood. In the present study, we investigated the immunological effects of pCS derived from intestinal bacteria in mice. For this purpose, we fed mice a tyrosine-rich diet that causes the accumulation of pCS in their blood. The mice were shown to exhibit decreased Th1-driven 2, 4-dinitrofluorobenzene-induced contact hypersensitivity response. The concentration of pCS in blood was negatively correlated with the degree of the contact hypersensitivity response. In contrast, the T cell-dependent antibody response was not influenced by the accumulated pCS. We also examined the in vitro cytokine responses by T cells in the presence of pCS. The production of IFN-γ was suppressed by pCS. Further, pCS decreased the percentage of IFN-γ-producing Th1 cells. Our results suggest that intestinal bacteria-derived pCS suppressesTh1-type cellular immune responses. - Highlights: • Mice fed a tyrosine-rich diet accumulated p-cresyl sulfate in their blood. • p-Cresyl sulfate negatively correlated with contact hypersensitivity response. • The in vitro production of IFN-γ was suppressed by p-cresyl sulfate. • p-Cresyl sulfate decreased the percentage of IFN-γ-producing Th1 cells in vitro

  1. Effects of intestinal bacteria-derived p-cresyl sulfate on Th1-type immune response in vivo and in vitro

    Energy Technology Data Exchange (ETDEWEB)

    Shiba, Takahiro, E-mail: takahiro-shiba@yakult.co.jp; Kawakami, Koji; Sasaki, Takashi; Makino, Ikuyo; Kato, Ikuo; Kobayashi, Toshihide; Uchida, Kazumi; Kaneko, Kimiyuki

    2014-01-15

    Protein fermentation by intestinal bacteria generates various compounds that are not synthesized by their hosts. An example is p-cresol, which is produced from tyrosine. Patients with chronic kidney disease (CKD) accumulate high concentrations of intestinal bacteria-derived p-cresyl sulfate (pCS), which is the major metabolite of p-cresol, in their blood, and this accumulation contributes to certain CKD-associated disorders. Immune dysfunction is a CKD-associated disorder that frequently contributes to infectious diseases among CKD patients. Although some studies imply pCS as an etiological factor, the relation between pCS and immune systems is poorly understood. In the present study, we investigated the immunological effects of pCS derived from intestinal bacteria in mice. For this purpose, we fed mice a tyrosine-rich diet that causes the accumulation of pCS in their blood. The mice were shown to exhibit decreased Th1-driven 2, 4-dinitrofluorobenzene-induced contact hypersensitivity response. The concentration of pCS in blood was negatively correlated with the degree of the contact hypersensitivity response. In contrast, the T cell-dependent antibody response was not influenced by the accumulated pCS. We also examined the in vitro cytokine responses by T cells in the presence of pCS. The production of IFN-γ was suppressed by pCS. Further, pCS decreased the percentage of IFN-γ-producing Th1 cells. Our results suggest that intestinal bacteria-derived pCS suppressesTh1-type cellular immune responses. - Highlights: • Mice fed a tyrosine-rich diet accumulated p-cresyl sulfate in their blood. • p-Cresyl sulfate negatively correlated with contact hypersensitivity response. • The in vitro production of IFN-γ was suppressed by p-cresyl sulfate. • p-Cresyl sulfate decreased the percentage of IFN-γ-producing Th1 cells in vitro.

  2. Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode.

    Science.gov (United States)

    Chandramohan, S; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; Kim, Taek Yong; Cho, Byung Jin; Suh, Eun-Kyung; Hong, Chang-Hee

    2013-02-01

    This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. Current-voltage characteristics of the graphene/p-GaN contacts with ultrathin Au, Ni, and NiO(x) interlayers were studied using transmission line model with circular contact geometry. Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Ohmic contact formation was realized when interlayer is introduced between the graphene and p-GaN followed by postmetallization annealing. Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. The tunneling mechanism results from the interfacial reactions that occur between the metal and p-GaN during the postmetallization annealing. InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power. X-ray photoelectron spectroscopy provided evidence for the occurrence of phase transformation in the graphene-encased NiO(x) during the postmetallization annealing. The observed low light output is therefore correlated to the phase change induced transmittance loss in the NiO(x)/graphene electrode. These findings provide new insights into the behavior of different interlayers under processing conditions that will be useful for the future development of opto-electronic devices with graphene-based electrodes.

  3. In situ measurement of fixed charge evolution at silicon surfaces during atomic layer deposition

    International Nuclear Information System (INIS)

    Ju, Ling; Watt, Morgan R.; Strandwitz, Nicholas C.

    2015-01-01

    Interfacial fixed charge or interfacial dipoles are present at many semiconductor-dielectric interfaces and have important effects upon device behavior, yet the chemical origins of these electrostatic phenomena are not fully understood. We report the measurement of changes in Si channel conduction in situ during atomic layer deposition (ALD) of aluminum oxide using trimethylaluminum and water to probe changes in surface electrostatics. Current-voltage data were acquired continually before, during, and after the self-limiting chemical reactions that result in film growth. Our measurements indicated an increase in conductance on p-type samples with p + ohmic contacts and a decrease in conductance on analogous n-type samples. Further, p + contacted samples with n-type channels exhibited an increase in measured current and n + contacted p-type samples exhibited a decrease in current under applied voltage. Device physics simulations, where a fixed surface charge was parameterized on the channel surface, connect the surface charge to changes in current-voltage behavior. The simulations and analogous analytical relationships for near-surface conductance were used to explain the experimental results. Specifically, the changes in current-voltage behavior can be attributed to the formation of a fixed negative charge or the modification of a surface dipole upon chemisorption of trimethylaluminum. These measurements allow for the observation of fixed charge or dipole formation during ALD and provide further insight into the electrostatic behavior at semiconductor-dielectric interfaces during film nucleation

  4. Incident Type 2 Diabetes Risk is Influenced by Obesity and Diabetes in Social Contacts: a Social Network Analysis.

    Science.gov (United States)

    Raghavan, Sridharan; Pachucki, Mark C; Chang, Yuchiao; Porneala, Bianca; Fox, Caroline S; Dupuis, Josée; Meigs, James B

    2016-10-01

    Obesity and diabetes family history are the two strongest risk factors for type 2 diabetes (T2D). Prior work shows that an individual's obesity risk is associated with obesity in social contacts, but whether T2D risk follows similar patterns is unknown. We aimed to estimate the relationship between obesity or diabetes in an individual's social contacts and his/her T2D risk. We hypothesized that obesity and diabetes in social contacts would increase an individual's T2D risk. This was a retrospective analysis of the community-based Framingham Offspring Study (FOS). FOS participants with T2D status, height and weight, and at least one social contact were eligible for this study (n = 4797 at Exam 1). Participants' interpersonal ties, cardiometabolic and demographic variables were available at eight exams from 1971 to 2008, and a T2D additive polygenic risk score was measured at the fifth exam. Primary exposures were T2D (fasting glucose ≥ 7 mmol/L or taking diabetes medications) and obesity status (BMI ≥ 30 kg/m(2)) of social contacts at a prior exam. Primary outcome was incident T2D in participants. Incident T2D was associated with having a social contact with diabetes (OR 1.32, p = 0.004) or with obesity (OR 1.21, p = 0.004). In stratified analyses, incident T2D was associated with diabetes in siblings (OR 1.64, p = 0.001) and obesity in spouses (OR 1.54, p = 0.0004). The associations between diabetes and obesity in social contacts and an individual's incident diabetes risk were stronger in individuals with a high diabetes genetic risk score. T2D and obesity in social contacts, particularly siblings and spouses, were associated with an individual's risk of incident diabetes even after accounting for parental T2D history. Assessing risk factors in an individual's siblings and spouses can inform T2D risk; furthermore, social network based lifestyle interventions involving spouses and siblings might be a novel T2D prevention approach.

  5. Sorption of uranyl ions on silica. Effects of contact time, pH, ionic strength, concentration and phosphate

    International Nuclear Information System (INIS)

    Zhang Hongxia; Tao Zuyi

    2002-01-01

    The sorption of UO 2 2+ and phosphate on silica were simultaneously studied. The effect of contact time between the solid phase and aqueous solution, pH and ionic strength on the UO 2 2+ sorption in the absence and the presence of phosphate was investigated. The effect of contact time between the solid phase and aqueous solution, pH and ionic strength on the phosphate sorption was investigated too. The isotherms of UO 2 2+ and phosphate sorption at different pH values were determined. It was found that as compared with the sorption in the absence of phosphate, the sorption of UO 2 2+ on silica in the presence of phosphate is increased at low pH and decreased at high pH; the abruptly increased with increasing pH in the pH range 3-6; the sorption is gradually decreased with increasing pH in the pH range 2-12; the sorption insensitive and the sorption of phosphate is sensitive to ionic strength. (author)

  6. Ohmic heating of a spheromak to 100 eV

    Energy Technology Data Exchange (ETDEWEB)

    Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

    1984-01-01

    The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H/sub 2/, and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10/sup 13/ cm/sup -3/) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes.

  7. Ohmic heating of a spheromak to 100 eV

    International Nuclear Information System (INIS)

    Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

    1984-01-01

    The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H 2 , and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10 13 cm -3 ) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes

  8. Design of TFTR movable limiter blades for ohmic and neutral-beam-heated plasmas

    International Nuclear Information System (INIS)

    Doll, D.W.; Ulrickson, M.A.; Cecchi, J.L.; Citrolo, J.C.; Weissenburger, D.; Bialek, J.

    1981-10-01

    A new set of movable limiter blades has been designed for TFTR that will meet both the requirements of the 4 MW ohmic heated and the 33 MW neutral beam heated plasmas. This is accomplished with three limiter blades each having and elliptical shape along the toroidal direction. Heat flux levels are acceptable for both ohmic heated and pre-strong compression plasmas. The construction consists of graphite tiles attached to cooled backing plates. The tiles have an average thickness of approx. 4.7 cm and are drawn against the backing plate with spring loaded fasteners that are keyed into the graphite. The cooled backing plate provides the structure for resisting disruption and fault induced loads. A set of rollers attached to the top and bottom blades allow them to be expanded and closed in order to vary the plasma surface for scaling experiments. Water cooling lines penetrate only the mid-plane port cover/support plate in such a way as to avoid bolted water connections inside the vacuum boundary and at the same time allow blade movement. Both the upper and lower blades are attached to the mid-plane limiter blade through pivots. Pivot connections are protected against arcing with an alumina coating and a shunt bar strap. Remote handling is considered throughout the design

  9. Tandem junction amorphous semiconductor photovoltaic cell

    Science.gov (United States)

    Dalal, Vikram L.

    1983-01-01

    A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

  10. P -type transparent conducting oxides

    International Nuclear Information System (INIS)

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-01-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

  11. Dark Current Reduction of IR Detectors

    Science.gov (United States)

    2017-10-19

    hands-on experience in the lab fabricating semiconductor devices for an important application. We would also like to thank the members of AFRL...InP/InGaAs 1 Surface preparation / particle removal (repeated before every step) 2 Etch InGaAs contact mesas, used for ohmic contact and alignment 3...and dopant film in with HF dip 9 PECVD oxide #3 ~75nm (passivation) 10 Pattern oxide for metal- semiconductor contacts 11 Final metallization using e

  12. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-08-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

  13. Carrier removal and defect behavior in p-type InP

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  14. Descriptive analysis of the type and design of contact lenses fitted according to keratoconus severity and morphology

    Directory of Open Access Journals (Sweden)

    Letícia Helena Lunardi

    2016-04-01

    Full Text Available ABSTRACT Purpose: Keratoconus is characterized by bilateral asymmetrical corneal ectasia that leads to inferior stromal thinning and corneal protrusion. There is currently a lack of consensus regarding the most efficacious method for fitting contact lenses in patients with keratoconus, given the various topographical patterns and evolution grades observed in affected populations. The purpose of the present study was to evaluate the association between keratoconus evolution grade and topography pattern and the type and design of fitted contact lens. Methods: We performed a retrospective analysis of contact lenses fitted in a total of 185 patients with keratoconus (325 eyes. Keratoconus was classified as either grade I, II, III, or IV based on keratometry and cone morphology (nipple, oval, globus, or indeterminate results. Results: A total of 325 eyes were evaluated in the present study. Of the 62 eyes classified as grade I, 66.1% were fitted with monocurve contact lenses. Of the 162 eyes classified as grade I and II, 51%, 30%, and 19% were fitted with adapted monocurve rigid gas-permeable contact lenses (RGPCL, bicurve lenses, and others lens types, respectively. Bicurve lenses were fitted in 52.1% and 62.2% of eyes classified as grade III and IV, respectively. Of the eyes classified as grade III and IV, monocurve and bicurve RGPCL were fitted in 26% and 55%, respectively. In eyes with oval keratoconus, 45%, 35%, and 20% were fitted with monocurve lenses, bicurve lenses, and other lens types, respectively. In eyes with round cones (nipple morphology, 55%, 30%, and 15% were fitted with bicurve lenses, monocurve lenses, and other lens types, respectively. Conclusion: Monocurve RGPCL were most frequently fitted in patients with mild to moderate keratoconus and oval cones morphology, while bicurve lenses were more frequently fitted in patients with severe and advanced keratoconus. This was probably because bicurve lenses are more appropriate for

  15. Information of Zeff from the sawtooth-performances in the center of ohmic tokamak discharges

    International Nuclear Information System (INIS)

    Eberhagen, A.

    1987-09-01

    Achievement of information on the mean effective ion charge in the center of ohmic tokamak discharges from sawtooth-relaxations of the plasma is considered. This method is found to supply trustworthy results for usual tokamak parameters. While its application requires some effort in data analysis, it can provide a valuable determination of Z eff -data, independent of the information from bremsstrahlung radiation losses of the plasma. (orig.)

  16. Solid-Contact pH Sensor without CO2 Interference with a Superhydrophobic PEDOT-C14 as Solid Contact: The Ultimate "Water Layer" Test.

    Science.gov (United States)

    Guzinski, Marcin; Jarvis, Jennifer M; D'Orazio, Paul; Izadyar, Anahita; Pendley, Bradford D; Lindner, Ernő

    2017-08-15

    The aim of this study was to find a conducting polymer-based solid contact (SC) for ion-selective electrodes (ISEs) that could become the ultimate, generally applicable SC, which in combination with all kinds of ion-selective membranes (ISMs) would match the performance characteristics of conventional ISEs. We present data collected with electrodes utilizing PEDOT-C 14 , a highly hydrophobic derivative of poly(3,4-ethylenedioxythiophene), PEDOT, as SC and compare its performance characteristics with PEDOT-based SC ISEs. PEDOT-C 14 has not been used in SC ISEs previously. The PEDOT-C 14 -based solid contact (SC) ion-selective electrodes (ISEs) (H + , K + , and Na + ) have outstanding performance characteristics (theoretical response slope, short equilibration time, excellent potential stability, etc.). Most importantly, PEDOT-C 14 -based SC pH sensors have no CO 2 interference, an essential pH sensors property when aimed for whole-blood analysis. The superhydrophobic properties (water contact angle: 136 ± 5°) of the PEDOT-C 14 SC prevent the detachment of the ion-selective membrane (ISM) from its SC and the accumulation of an aqueous film between the ISM and the SC. The accumulation of an aqueous film between the ISM and its SC has a detrimental effect on the sensor performance. Although there is a test for the presence of an undesirable water layer, if the conditions for this test are not selected properly, it does not provide an unambiguous answer. On the other hand, recording the potential drifts of SC electrodes with pH-sensitive membranes in samples with different CO 2 levels can effectively prove the presence or absence of a water layer in a short time period.

  17. Engineering design solutions of flux swing with structural requirements for ohmic heating solenoids

    International Nuclear Information System (INIS)

    Smith, R.A.

    1977-01-01

    Here a more detailed publication is summarized which presents analytical methods with solutions that describe the structural behavior of ohmic heating solenoids to achieve a better understanding of the relationships between the functional variables that can provide the basis for recommended design improvements. The solutions relate the requirements imposed by structural integrity to the need for producing sufficient flux swing to initiate a plasma current in the tokamak fusion machine. A method is provided to perform a detailed structural analysis of every conducting turn in the radial build of the solenoid, and computer programmed listings for the closed form solutions are made available as part of the reference document. Distinction is made in deriving separate models for the regions of the solenoid where turn-to-turn radial contact is maintained with radial compression or with a bond in the presence of radial tension, and also where there is turn-to-turn radial separation due to the absence or the loss of bonding in the presence of would be radial tension. The derivations follow the theory of elasticity for a body possessing cylindrical anisotropy where the material properties are different in the radial and tangential directions. The formulations are made practical by presenting the methods for reducing stress and for relocating the relative position for potential turn-to-turn radial delamination by permitting an arbitrary traction at the outer radial surface of the solenoid in the form of pressure or displacement such as may be applied by a containment or a shrink fit structural cylinder

  18. Radiation losses and global energy balance for Ohmically heated discharges in ASDEX

    International Nuclear Information System (INIS)

    Mueller, E.R.; Behringer, K.; Niedermeyer, H.

    1982-01-01

    Global energy balance, radiation profiles and dominant impurity radiation sources are compared for Ohmically heated limiter and divertor discharges in the ASDEX tokamak. In discharges with a poloidal stainless-steel limiter, total radiation from the plasma is the dominant energy loss channel. The axisymmetric divertor reduces this volume-integrated radiation to 30-35% of the heating power and additional Ti-gettering halves it again to 10-15%. Local radiation losses in the plasma centre, which are mainly due to the presence of iron impurity ions, are reduced by about one order of magnitude. In high-current (Isub(p) = 400 kA) and high-density (nsub(e)-bar = 6 x 10 13 cm -3 ) ungettered divertor discharges, up to 55% of the heating power is dumped into a cold-gas target inside the divertor chambers. The bolometrically detected volume power losses in the chambers can mainly be attributed to neutral hydrogen atoms with kinetic energies of a few eV. In this parameter range, the divertor plasma is dominated by inelastic molecular and atomic processes, the main process being Franck-Condon dissociation of H 2 molecules. (author)

  19. Fundamental investigation of high temperature operation of field effect transistor devices

    Science.gov (United States)

    Chern, Jehn-Huar

    In this dissertation copper germanium (CuGe)-based materials were investigated as potential ohmic contacts to n-type gallium arsenide (GaAs). The CuGe-based contacts to GaAs were found to not form any reaction products with GaAs and to have low contact resistance comparable to that of nickel gold germanium (NiAuGe) ohmic contacts to GaAs. The potential for high temperature applications using CuGe ohmic contacts was investigated. A guideline for further reduction of the contact resistance has been achieved after investigating the detailed mechanism of the formation of binary CuGe contacts over a wide range of Ge concentrations. The thermal stability of CuGe contacts was significantly enhanced and improved by introducing a diffusion barrier, titanium tungsten nitride (TiWNx), and a gold (Au) overlayer for high temperature applications. Novel approaches such as epitaxial thulium phosphide (TmP) Schottky contacts and the utilization of low temperature (LT)-aluminum gallium arsenide (AlGaAs) were also investigated in this dissertation and likely will be the standard technologies for a new generation of high-temperature electronics. Inserting a layer of aluminum arsenide (AlAs) underneath the channel of a GaAs-based MESFET was found to reduce substrate leakage currents by a factor of 30 compared with the same MESFET directly fabricated on a semi-insulating GaAs substrate. In addition to AlAs, and AlxGa1-xAs materials, new materials grown at low temperatures such as LT-AlGaAs were used in heterojunction FET structures as a back wall barrier. Low drain leakage currents were achieved using AlAs and LT-AlGaAs as the back wall barriers. Some fundamental properties regarding these materials are of great interest and in need of further characterization. Part of the work in this dissertation was devoted to the characterization of device performance for different structure designs at elevated temperatures. The suitability of GaAs-based and gallium arsenide (GaN)-based MESFET

  20. Metal-support interactions in electrocatalysis: Hydrogen effects on electron and hole transport at metal-support contacts

    International Nuclear Information System (INIS)

    Heller, A.

    1986-01-01

    This paper discusses the effects of hydrogen on electron and hole transport at metal support contacts during electrocatalysis. When hydrogen dissolves in high work function metals such as Pt, Rh or Ru the contact forms between the semiconductor and the hydrogenated metal, which has a work function that is lower than that of the pure metal. Thus by changing the gaseous atmosphere that envelopes metal-substrate contacts, it is possible to reversibly change their diode characteristics. In some cases, such as Pt on n-TiO/sub 2/, Rh on n-TiO/sub 2/ and Ru on n-TiO/sub 2/, it is even possible to reversibly convert Schottky diodes into ohmic contacts by changing the atmosphere from air to hydrogen. In contacts between hydrogen dissolving group VIII metals and semiconducting substrates, one can test for interfacial reaction of the catalysts and the substrate by examining the electrical characteristics of the contacts in air (oxygen) and in hydrogen. In the absence of interfacial reaction, large hydrogen induced variation in the barrier heights is observed and the hydrogenated contacts, approach ideality (i.e. their non-ideality factor is close to unity). When a group VIII metal and a substrate do react, the reaction often produces a phase that blocks hydrogen transport to the interface between the substrate and the reaction product. In this case the hydrogen effect is reduced or absent. Furthermore, because such reaction often introduces defects into the surface of the semiconductor, the contacts have non-ideal diode characteristics

  1. Effect of gene-targeted mutation in TNF receptor (p55) on contact hypersensitivity and ultraviolet B-induced immunosuppression

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, Seiji; Wang, Binghe; Fujisawa, Hiroshi [Univ. of Toronto, Ontario (Canada)] [and others

    1995-10-15

    Tumor necrosis factor {alpha} (TNF-{alpha}) is a pleiotropic proinflammatory cytokine. TNF-{alpha} has been implicated in the pathogenesis of delayed-type hypersensitivity reactions such as allergic contact hypersensitivity and has been suggested as a mediator of ultraviolet B (UVB)-induced immunosuppression. Conflicting reports, however, exist concerning the effects of TNF-{alpha} on contact hypersensitivity (CHS). To determine the role of TNF-{alpha} in the generation and regulation of CHS, gene-targeted mutant mice lacking TNF-receptor (p55) gene (TNF-R1(-) mice) were treated with dinitrofluorobenzene (DNFB) to induce CHS. TNF-R1(-) mice showed significant hyperresponsiveness in CHS (152.8 {+-} 20.9%, p < 0.025) compared with normal syngeneic mice (C57BL/6) assessed by ear swelling. To determine whether UVB can induce suppression in TNF-R1(-) mice, mice were irradiated on the shaved abdomen with 96 ml/cm{sup 2} UVB and 3 days later they were painted with 0.5% DNFB (sensitization dose), followed 5 days later with 0.2% DNFB to the left ear (challenge dose). Significant suppression of CHS was observed both locally (sensitization on irradiated site) and systemically (sensitization on unirradiated site) in UVB-irradiated TNF-R1(-) mice as well as in normal mice. To rule out possible signaling through p75 TNF-R, the mice were treated with anti-TNF-{alpha} Ab (V1q), which can neutralize any TNF effects through either receptor. V1q had no effect on these phenomena observed in TNF-R1(-) mice. These results suggest that TNF-{alpha} plays a regulatory role in CHS but is not required to induce UVB-mediated immunosuppression. 45 refs., 5 figs.

  2. Proposal of Non-Contact Type Interface of Command Input Using Lip Motion Features

    Science.gov (United States)

    Sato, Yoshiyuki; Kageyama, Yoichi; Nishida, Makoto

    Lip motion features are of practical use in identifying individuals. It is therefore important to develop non-contact type interface. For the interface using lip motion features, individual differences such as accents and dialects in commands should be accepted. In this paper, we propose a method to identify commands by analyzing three kinds of lip motion features. They are lip width, lip length, and ratio of width and length. The analysis is made on the basis of these features' relative values obtained from the primary and object frame. The proposed method has three steps. First, we extracted the lip motion features on the basis of both positions and shapes of lip in each frame of facial images. Second, standard patterns were created from features of six utterances per command. The standard pattern is able to reduce the relative difference in the lip motion features. Third, similarities among commands were computed by Dynamic-Programming (DP) matching. And then, the command with the largest similarity was selected as the target one. Our experimental results suggest that proposed method is useful to construct the non-contact type interface of command input using lip motion features.

  3. Point contact tunneling spectroscopy apparatus for large scale mapping of surface superconducting properties

    Energy Technology Data Exchange (ETDEWEB)

    Groll, Nickolas; Pellin, Michael J. [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); Zasadzinksi, John F. [Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Proslier, Thomas, E-mail: prolier@anl.gov [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); High Energy Physics Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States)

    2015-09-15

    We describe the design and testing of a point contact tunneling spectroscopy device that can measure material surface superconducting properties (i.e., the superconducting gap Δ and the critical temperature T{sub C}) and density of states over large surface areas with size up to mm{sup 2}. The tip lateral (X,Y) motion, mounted on a (X,Y,Z) piezo-stage, was calibrated on a patterned substrate consisting of Nb lines sputtered on a gold film using both normal (Al) and superconducting (PbSn) tips at 1.5 K. The tip vertical (Z) motion control enables some adjustment of the tip-sample junction resistance that can be measured over 7 orders of magnitudes from a quasi-ohmic regime (few hundred Ω) to the tunnel regime (from tens of kΩ up to few GΩ). The low noise electronic and LabVIEW program interface are also presented. The point contact regime and the large-scale motion capabilities are of particular interest for mapping and testing the superconducting properties of macroscopic scale superconductor-based devices.

  4. Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

    International Nuclear Information System (INIS)

    Lotkhov, Sergey V

    2013-01-01

    In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

  5. Effect of phospholipid deposits on adhesion of bacteria to contact lenses.

    Science.gov (United States)

    Babaei Omali, Negar; Proschogo, Nicholas; Zhu, Hua; Zhao, Zhenjun; Diec, Jennie; Borazjani, Roya; Willcox, Mark D P

    2012-01-01

    Protein and lipid deposits on contact lenses may contribute to clinical complications. This study examined the effect of phospholipids on the adhesion of bacteria to contact lenses. Worn balafilcon A (n = 11) and senofilcon A (n = 11) were collected after daily wear and phospholipids were extracted in chloroform:methanol. The amount of phospholipid was measured by electrospray ionization mass spectrometry. Unworn lenses soaked in phospholipids were exposed to Pseudomonas aeruginosa and Staphylococcus aureus. After 18 h incubation, the numbers of P. aeruginosa or S. aureus that adhered to the lenses were measured. Phospholipid was tested for possible effects on bacterial growth. A broad range of sphingomyelins (SM) and phosphatidylcholines (PC) were detected from both types of worn lenses. SM (16:0) (m/z 703) and PC (34:2) (m/z 758) were the major phospholipids detected in the lens extracts. Phospholipids did not alter the adhesion of any strain of P. aeruginosa or S. aureus (p > 0.05). Phospholipids (0.1 mg/mL) showed no effect on the growth of P. aeruginosa 6294 or S. aureus 031. Phospholipids adsorb/absorb to contact lenses during wear, however, the major types of phospholipids adsorbed to lenses do not alter bacterial adhesion or growth.

  6. Oxide Thin-Film Electronics using All-MXene Electrical Contacts

    KAUST Repository

    Wang, Zhenwei

    2018-02-23

    2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

  7. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

    1993-10-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T[sub i], and ion thermal diffusivity, [chi][sub i], are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author).

  8. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    International Nuclear Information System (INIS)

    Esposito, B.

    1993-01-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T i , and ion thermal diffusivity, χ i , are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author)

  9. Effect of morphology on the non-ohmic conduction in ZnO nanostructures

    Science.gov (United States)

    Praveen, E.; Jayakumar, K.

    2016-05-01

    Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

  10. MHD-activity in ohmic, diverted and limited H-mode plasmas in TCV

    International Nuclear Information System (INIS)

    Pochelon, A.; Anton, M.; Buehlmann, F.; Dutch, M.J.; Duval, B.P.; Hirt, A.; Hofmann, F.; Joye, B.; Lister, J.B.; Llobet, X.; Martin, Y.; Moret, J.M.; Nieswand, C.; Pietrzyk, A.Z.; Tonetti, G.; Weisen, H.

    1994-01-01

    During its first year of operation the TCV tokamak has produced a variety of plasma configurations with currents in the range 150 to 800 kA and elongations in the range of 1.0 to 2.05. Ohmic H-modes have been obtained in diverted discharges and discharges limited on the graphite tiles inner wall. After boronisation in May 1994 H-modes with line average densities up to 1.7x10 20 m -3 , corresponding to a Murakami parameter of 10, were obtained. (author) 5 figs., 2 refs

  11. Ti(r) profiles from the JET neutron profile monitor for ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

    1991-01-01

    A study has been made of the neutron emissivity, using the JET neutron profile monitor, obtained for ohmically heated deuterium discharges. Both one-dimensional (1-D) best-fit inversion procedures and 2-D tomography have been used to deduce the radial profile of the neutron emission from the line-integral data. The profiles of ion temperature and ion thermal conductivity are then derived. The scaling of the ion thermal conductivity with plasma current is found to be opposite to that of neoclassical theory. (author) 4 refs., 5 figs.

  12. Efficiency for close geometries and extended sources of a p-type germanium detector with low-energy sensitivity

    International Nuclear Information System (INIS)

    Keyser, R.M.; Twomey, T.R.

    2007-01-01

    Typically, germanium detectors designed to have good sensitivity to low-energy photons and good efficiency at high energies are constructed from n-type crystals with a boron-implanted outer contact. These detectors usually exhibit inferior resolution and peak shape compared to ones made from p-type crystals. To overcome the resolution and peak-shape deficiencies, a new method of construction of a germanium detector element was developed. This has resulted in a gamma-ray detector with high sensitivity to photon energies from 14 keV to 2 MeV, while maintaining good resolution and peak shape over this energy range. Efficiency measurements, done according to the draft IEEE 325-2004 standard, show efficiencies typical of a GMX or n-type detector at low energies. The detectors are of large diameter suitable for counting extended samples such as filter papers. The Gaussian peak shape and good resolution typical of a GEM or p-type are maintained for the high count rates and peak separation needed for activation analysis. (author)

  13. Impact of nitrogen plasma passivation on the Al/n-Ge contact

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Shumei; Mao, Danfeng [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Ruan, Yujiao [Xiamen Institute of Measurement and Testing, Xiamen, Fujian 361004 (China); Xu, Yihong; Huang, Zhiwei; Huang, Wei [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Chen, Songyan, E-mail: sychen@xmu.edu.cn [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Li, Cheng; Wang, Jianyuan [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Tang, Dingliang [College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

    2016-09-15

    Highlights: • A thin GeO{sub x}N{sub y} layer was formed by N{sub 2} plasma. • The principal parameters of N{sub 2} plasma treatment and additional post anneal have a great impact on the Al/n-Ge contact. • A model was proposed to explain the variation of Schottky barrier height. • The GeO{sub x}N{sub y} layer was also benefit to achieve a low leakage current density for HfO{sub 2}/Ge MOS capacitors. - Abstract: Severe Fermi level pinning at the interface of metal/n-Ge leads to the formation of a Schottky barrier. Therefore, a high contact resistance is introduced, debasing the performance of Ge devices. In this study, a Ge surface was treated by nitrogen plasma to form an ultra-thin Germanium oxynitride (GeO{sub x}N{sub y}) passivation layer. It was found that the Schottky barrier height (SBH) of metal/n-Ge contact was strongly modulated by the GeO{sub x}N{sub y} interlayer, indicating alleviation of Fermi-level pinning effect. By adjusting the principal parameters of N{sub 2} plasma treatment and additional post anneal, a Quasi-ohmic Al/n-Ge contact was achieved. Furthermore, the introduced GeO{sub x}N{sub y} layer gave extremely lower leakage current density of the gate stack for HfO{sub 2}/Ge devices. These results demonstrate that GeO{sub x}N{sub y} formed by N{sub 2} plasma would be greatly beneficial to the fabrication of the Ge-based devices.

  14. B12P2: Improved Epitaxial Growth and Evaluation of Alpha Irradiation on its Electrical Transport Properties

    Energy Technology Data Exchange (ETDEWEB)

    Frye, Clint D. [Kansas State Univ., Manhattan, KS (United States)

    2016-10-17

    The wide bandgap (3.35 eV) semiconductor icosahedral boron phosphide (B12P2) has been reported to self-heal from radiation damage from β particles (electrons) with energies up to 400 keV by demonstrating no lattice damage using transmission electron microscopy. This property could be exploited to create radioisotope batteries–semiconductor devices that directly convert the decay energy from a radioisotope to electricity. Such devices potentially have enormous power densities and decades-long lifetimes. To date, the radiation hardness of B12P2 has not been characterized by electrical measurements nor have B12P2 radioisotope batteries been realized. Therefore, this study was undertaken to evaluate the radiation hardness of B12P2 after improving its epitaxial growth, developing ohmic electrical contacts, and reducing the residual impurities. Subsequently, the effects of radiation from a radioisotope on the electrical transport properties of B12P2 were tested.

  15. Diagnosis of three types of constant faults in read-once contact networks over finite bases

    KAUST Repository

    Busbait, Monther I.

    2016-03-24

    We study the depth of decision trees for diagnosis of three types of constant faults in read-once contact networks over finite bases containing only indecomposable networks. For each basis and each type of faults, we obtain a linear upper bound on the minimum depth of decision trees depending on the number of edges in networks. For bases containing networks with at most 10 edges, we find sharp coefficients for linear bounds.

  16. DETERMINATION OF CONTACT STRESSES IN THE RAILS P50, WHICH ARE OPERATED IN THE METRO

    Directory of Open Access Journals (Sweden)

    O. V. Agarkov

    2015-07-01

    Full Text Available Purpose. In the research one should do: 1 to determine a 3-d stress-strain state of the rail head in contact with the rolling wheels; 2 to analyze different forms of contact interaction; 3 to obtain the data necessary to calculate the durability of railway track rails. Methodology. The basis for calculating the 3-d stress-strain state is the finite element method. The basis for calculating the volume of the stress-strain state is the finite element method. The problem was solved in the elastic 3-D conditions. Real geometrical bodies parameters were used during the solving. Findings. The calculation of the 3-d stress-strain state of the rail head in contact with the rolling wheels for various cases of the contact surfaces geometry is performed. The results of calculation are presented in the graphic and tabular form. The comparison of different options contact conditions is performed. The results are analyzed and conclusions about the optimality conditions of contact interaction are made. Originality. The results of the calculation showed that within the criterion of minimizing the contact stresses in the rails P50 for the conditions specific to the direct contact route section, the use of rolling wheels with a profile according to the drawings of CJSC «MINETEK» is not the most rational decision. The most rational in this case, among the considered is the laying of rails in track with gradient 1:20 and the use of the wheel with the rolling surface profile of 1:10 conicity. The lack of rail gradient eliminates the benefits of the wheel running surface with 1:10 conicity, and a case of contact interaction is the least rational. Practical value. The results of analysis of the contact interaction of the rail head with a rolling stock wheel in a three-dimensional elastic formulation for different conditions of contact interaction were obtained. These data can be used to optimize the conditions of contact interaction and scientific substantiation of

  17. Bayesian Analysis of Hot-Jupiter Radius Anomalies: Evidence for Ohmic Dissipation?

    Science.gov (United States)

    Thorngren, Daniel P.; Fortney, Jonathan J.

    2018-05-01

    The cause of hot-Jupiter radius inflation, where giant planets with {T}eq} > 1000 K are significantly larger than expected, is an open question and the subject of many proposed explanations. Many of these hypotheses postulate an additional anomalous power that heats planets’ convective interiors, leading to larger radii. Rather than examine these proposed models individually, we determine what anomalous powers are needed to explain the observed population’s radii, and consider which models are most consistent with this. We examine 281 giant planets with well-determined masses and radii and apply thermal evolution and Bayesian statistical models to infer the anomalous power as a fraction of (and varying with) incident flux ɛ(F) that best reproduces the observed radii. First, we observe that the inflation of planets below about M = 0.5 M J appears very different than their higher-mass counterparts, perhaps as the result of mass loss or an inefficient heating mechanism. As such, we exclude planets below this threshold. Next, we show with strong significance that ɛ(F) increases with {T}eq} toward a maximum of ∼2.5% at T eq ≈ 1500 K, and then decreases as temperatures increase further, falling to ∼0.2% at T eff = 2500 K. This high-flux decrease in inflation efficiency was predicted by the Ohmic dissipation model of giant planet inflation but not other models. We also show that the thermal tides model predicts far more variance in radii than is observed. Thus, our results provide evidence for the Ohmic dissipation model and a functional form for ɛ(F) that any future theories of hot-Jupiter radii can be tested against.

  18. Sulfur passivation and contact methods for GaAs nanowire solar cells

    International Nuclear Information System (INIS)

    Tajik, N; Peng, Z; Kuyanov, P; LaPierre, R R

    2011-01-01

    The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.

  19. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

    International Nuclear Information System (INIS)

    Kim, Sun-Hong; Kim, Sung-Soo

    2010-01-01

    For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

  20. Classification of hand eczema: clinical and aetiological types. Based on the guideline of the Danish Contact Dermatitis Group

    DEFF Research Database (Denmark)

    Johansen, Jeanne Duus; Hald, Marianne; Andersen, Bo Lasthein

    2011-01-01

    Background. No generally accepted classification scheme for hand eczema exists. The Danish Contact Dermatitis Group recently developed a guideline defining common clinical types and providing criteria for aetiological types. Objectives. To test the concepts of this guideline in a group of hand...

  1. Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

    Science.gov (United States)

    Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

    2016-12-01

    Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

  2. Intercellular transfer of P-glycoprotein from the drug resistant human bladder cancer cell line BIU-87 does not require cell-to-cell contact.

    Science.gov (United States)

    Zhou, Hui-liang; Zheng, Yong-jun; Cheng, Xiao-zhi; Lv, Yi-song; Gao, Rui; Mao, Hou-ping; Chen, Qin

    2013-09-01

    The efflux activity of transmembrane P-glycoprotein prevents various therapeutic drugs from reaching lethal concentrations in cancer cells, resulting in multidrug resistance. We investigated whether drug resistant bladder cancer cells could transfer functional P-glycoprotein to sensitive parental cells. Drug sensitive BIU-87 bladder cancer cells were co-cultured for 48 hours with BIU-87/ADM, a doxorubicin resistant derivative of the same cell line, in a Transwell® system that prevented cell-to-cell contact. The presence of P-glycoprotein in recipient cell membranes was established using fluorescein isothiocyanate, laser scanning confocal microscopy and Western blot. P-glycoprotein mRNA levels were compared between cell types. Rhodamine 123 efflux assay was done to confirm that P-glycoprotein was biologically active. The amount of P-glycoprotein protein in BIU-87 cells co-cultured with BIU-87/ADM was significantly higher than in BIU-87 cells (0.44 vs 0.25) and BIU-87/H33342 cells (0.44 vs 0.26, each p transfer. P-glycoprotein mRNA expression was significantly higher in BIU-87/ADM cells than in co-cultured BIU-87 cells (1.28 vs 0.30), BIU-87/H33342 (0.28) and BIU-87 cells (0.25, each p <0.001), ruling out a genetic mechanism. After 30 minutes of efflux, rhodamine 123 fluorescence intensity was significantly lower in BIU-87/ADM cells (5.55 vs 51.45, p = 0.004) and co-cultured BIU-87 cells than in BIU-87 cells (14.22 vs 51.45, p <0.001), indicating that P-glycoprotein was functional. Bladder cancer cells can acquire functional P-glycoprotein through a nongenetic mechanism that does not require direct cell contact. This mechanism is consistent with a microparticle mediated process. Copyright © 2013 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

  3. Investigation on Plasma Jet Flow Phenomena During DC Air Arc Motion in Bridge-Type Contacts

    Science.gov (United States)

    Zhai, Guofu; Bo, Kai; Chen, Mo; Zhou, Xue; Qiao, Xinlei

    2016-05-01

    Arc plasma jet flow in the air was investigated under a bridge-type contacts in a DC 270 V resistive circuit. We characterized the arc plasma jet flow appearance at different currents by using high-speed photography, and two polished contacts were used to search for the relationship between roughness and plasma jet flow. Then, to make the nature of arc plasma jet flow phenomena clear, a simplified model based on magnetohydrodynamic (MHD) theory was established and calculated. The simulated DC arc plasma was presented with the temperature distribution and the current density distribution. Furthermore, the calculated arc flow velocity field showed that the circular vortex was an embodiment of the arc plasma jet flow progress. The combined action of volume force and contact surface was the main reason of the arc jet flow. supported by National Natural Science Foundation of China (Nos. 51307030, 51277038)

  4. Human Tear Fluid Reduces Culturability of Contact Lens Associated Pseudomonas aeruginosa Biofilms but Induces Expression of the Virulence Associated Type III Secretion System

    Science.gov (United States)

    Wu, Yvonne T.; Tam, Connie; Zhu, Lucia S.; Evans, David J.; Fleiszig, Suzanne M. J.

    2017-01-01

    Purpose The type III secretion system (T3SS) is a significant virulence determinant for Pseudomonas aeruginosa. Using a rodent model, we found that contact lens (CL)-related corneal infections were associated with lens surface biofilms. Here, we studied the impact of human tear fluid on CL-associated biofilm growth and T3SS expression. Methods P. aeruginosa biofilms were formed on contact lenses for up to 7 days with or without human tear fluid, then exposed to tear fluid for 5 or 24 h. Biofilms were imaged using confocal microscopy. Bacterial culturability was quantified by viable counts, and T3SS gene expression measured by RT-qPCR. Controls included trypticase soy broth, PBS and planktonic bacteria. Results With or without tear fluid, biofilms grew to ~108 cfu viable bacteria by 24 h. Exposing biofilms to tear fluid after they had formed without it on lenses reduced bacterial culturability ~180-fold (pbacteria [5.46 ± 0.24-fold for T3SS transcriptional activitor exsA (p=.02), and 3.76 ± 0.36-fold for T3SS effector toxin exoS (p=.01)]. Tear fluid further enhanced exsA and exoS expression in CL-grown biofilms, but not planktonic bacteria, by 2.09 ± 0.38-fold (p = 0.04) and 1.89 ± 0.26-fold (p<.001), respectively. Conclusions Considering the pivitol role of the T3SS in P. aeruginosa infections, its induction in CL-grown P. aeruginosa biofilms by tear fluid might contribute to the pathogenesis of CL-related P. aeruginosa keratitis. PMID:27670247

  5. Investigation of silicon sensors quality as a function of the ohmic side processing technology

    CERN Document Server

    Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

    2002-01-01

    Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

  6. Evidence for reduction of the toroidal ITG instability in the transition from saturated to improved Ohmic confinement in the tokamak TEXTOR

    International Nuclear Information System (INIS)

    Kreter, A; Schweer, B; Tokar, M Z; Unterberg, B

    2003-01-01

    In high density Ohmically heated discharges in the tokamak TEXTOR a transition from the saturated Ohmic confinement (SOC) to the improved Ohmic confinement (IOC) was observed triggered by a sudden reduction of the external gas flow. The SOC-IOC transition was investigated regarding the influence of the toroidal ITG instability driven by the ion temperature gradient (ITG). The ion temperature profiles were measured with high radial resolution by means of charge-exchange recombination spectroscopy (CXRS) with a high-energetic diagnostic hydrogen beam recently installed at TEXTOR. On the basis of the measured ion temperature distributions the η i parameter (ratio of the density and ion temperature decay lengths) and the growth rate of the toroidal ITG instability were calculated. After the SOC-IOC transition η i drops and lies in a noticeably smaller radial region over the threshold for the toroidal ITG. In consequence of it, the IOC regime is characterized by a clear reduction of the ITG growth rate γ ITG which was calculated including finite Larmor radius effects. The steepening of the plasma density profile after the decrease of the external gas flow is the main reason for the reduction of the ITG growth rate and the subsequent confinement transition to the IOC regime

  7. A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

    Science.gov (United States)

    Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

    2010-05-14

    This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

  8. Bacterial adhesion to conventional hydrogel and new silicone-hydrogel contact lens materials.

    Science.gov (United States)

    Kodjikian, Laurent; Casoli-Bergeron, Emmanuelle; Malet, Florence; Janin-Manificat, Hélène; Freney, Jean; Burillon, Carole; Colin, Joseph; Steghens, Jean-Paul

    2008-02-01

    As bacterial adhesion to contact lenses may contribute to the pathogenesis of keratitis, the aim of our study was to investigate in vitro adhesion of clinically relevant bacteria to conventional hydrogel (standard HEMA) and silicone-hydrogel contact lenses using a bioluminescent ATP assay. Four types of unworn contact lenses (Etafilcon A, Galyfilcon A, Balafilcon A, Lotrafilcon B) were incubated with Staphylococcus epidermidis (two different strains) and Pseudomonas aeruginosa suspended in phosphate buffered saline (PBS). Lenses were placed with the posterior surface facing up and were incubated in the bacterial suspension for 4 hours at 37 degrees C. Bacterial binding was then measured and studied by bioluminescent ATP assay. Six replicate experiments were performed for each lens and strain. Adhesion of all species of bacteria to standard HEMA contact lenses (Etafilcon A) was found to be significantly lower than that of three types of silicone-hydrogel contact lenses, whereas Lotrafilcon B material showed the highest level of bacterial binding. Differences between species in the overall level of adhesion to the different types of contact lenses were observed. Adhesion of P. aeruginosa was typically at least 20 times greater than that observed with both S. epidermidis strains. Conventional hydrogel contact lenses exhibit significantly lower bacterial adhesion in vitro than silicone-hydrogel ones. This could be due to the greater hydrophobicity but also to the higher oxygen transmissibility of silicone-hydrogel lenses.

  9. Current knowledge on biomarkers for contact sensitization and allergic contact dermatitis

    DEFF Research Database (Denmark)

    Koppes, Sjors A.; Engebretsen, Kristiane A.; Agner, Tove

    2017-01-01

    Contact sensitization is common and affects up to 20% of the general population. The clinical manifestation of contact sensitization is allergic contact dermatitis. This is a clinical expression that is sometimes difficult to distinguish from other types of dermatitis, for example irritant...... and atopic dermatitis. Several studies have examined the pathogenesis and severity of allergic contact dermatitis by measuring the absence or presence of various biomarkers. In this review, we provide a non-systematic overview of biomarkers that have been studied in allergic contact dermatitis. These include...... genetic variations and mutations, inflammatory mediators, alarmins, proteases, immunoproteomics, lipids, natural moisturizing factors, tight junctions, and antimicrobial peptides. We conclude that, despite the enormous amount of data, convincing specific biomarkers for allergic contact dermatitis are yet...

  10. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  11. Achieving improved ohmic confinement via impurity injection

    International Nuclear Information System (INIS)

    Bessenrodt-Weberpals, M.; Soeldner, F.X.

    1991-01-01

    Improved Ohmic Confinement (IOC) was obtained in ASDEX after a modification of the divertors that allowed a larger (deuterium and impurity) backflow from the divertor chamber. The quality of IOC depended crucially on the wall conditions, i.e. IOC was best for uncovered stainless steels walls and vanished with boronization. Furthermore, IOC was found only in deuterium discharges. These circumstances led to the idea that IOC correlates with the content of light impurities in the plasma. To substantiate this working hypothesis, we present observations in deuterium discharges with boronized wall conditions into which various impurities have been injected with the aim to induce IOC conditions. Firstly, the plasma behaviour in typical IOC discharges is characterized. Secondly, injection experiments with the low-Z impurities nitrogen and neon as well as with the high-Z impurities argon and krypton are discussed. Then, we concentrate on optimized neon puffing that yields the best confinement results which are similar to IOC conditions. Finally, these results are compared with eperiments in other tokamaks and some conclusions are drawn about the effects of the impurity puffing on both, the central and the edge plasma behaviour. (orig.)

  12. The effects of surface stripping ZnO nanorods with argon bombardment

    International Nuclear Information System (INIS)

    Barnett, Chris J; Kryvchenkova, Olga; Maffeis, Thierry G G; Cobley, Richard J; Smith, Nathan A; Kelleher, Liam

    2015-01-01

    ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanorods allowing intrinsic surface measurements through a cross section of the material. Photoluminescence finds that the defect distribution is higher at the near-surface, falling away in to the bulk. Contacts to the n-type defect-rich surface are near-Ohmic, whereas stripping away the surface layers allows more rectifying Schottky contacts to be formed. The ability to select the contact type to ZnO nanorods offers a new way to customize device behaviour. (paper)

  13. Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

    Science.gov (United States)

    Simchi, Hamed; Cooley, Kayla A; Ding, Zelong; Molina, Alex; Mohney, Suzanne E

    2018-05-16

    Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( R c ) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications. To engineer the Schottky barrier between the metal contact and GeTe, Sn was tested as an interesting candidate to alter the composition of the semiconductor near its surface, potentially forming a narrow band gap (0.2 eV) SnTe or a graded alloy with SnTe in GeTe. For this purpose, a novel contact stack of Sn/Fe/Au was employed and compared to a conventional Ti/Pt/Au stack. Two different premetallization surface treatments of HCl and deionized (DI) H 2 O were employed to make a Te-rich and Ge-rich interface, respectively. Contact resistance values were extracted using the refined transfer length method. The best results were obtained with DI H 2 O for the Sn-based contacts but HCl treatment for the Ti/Pt/Au contacts. The as-deposited contacts had the R c (ρ c ) of 0.006 Ω·mm (8 × 10 -9 Ω·cm 2 ) for Sn/Fe/Au and 0.010 Ω·mm (3 × 10 -8 Ω·cm 2 ) for Ti/Pt/Au. However, the Sn/Fe/Au contacts were thermally stable, and their resistance decreased further to 0.004 Ω·mm (4 × 10 -9 Ω·cm 2 ) after annealing at 200 °C. In contrast, the contact resistance of the Ti/Pt/Au stack increased to 0.012 Ω·mm (4 × 10 -8 Ω·cm 2 ). Transmission electron microscopy was used to characterize the interfacial reactions between the metals and GeTe. It was found that formation of SnTe at the interface, in addition to Fe diffusion (doping) into GeTe, is likely responsible for the superior performance of Sn/Fe/Au contacts, resulting in one of the lowest reported

  14. Thermometry in dielectrophoresis chips for contact-free cell handling

    International Nuclear Information System (INIS)

    Jaeger, M S; Mueller, T; Schnelle, T

    2007-01-01

    Cell biology applications, protocols in immunology and stem cell research, require that individual cells are handled under strict control of their contacts to other cells or synthetic surfaces. Dielectrophoresis (DEP) in microfluidic chips is an established technique to investigate, group, wash, cultivate and sort cells contact-free under physiological conditions: microelectrode octode cages, versatile dielectrophoretic elements energized with radio frequency electric fields, stably trap single cells or cellular aggregates. For medical applications and cell cultivation, possible side effects of the dielectrophoretic manipulation, such as membrane polarization and Joule heating, have to be quantified. Therefore, we characterized the electric field-induced warming in dielectrophoretic cages using ohmic resistance measurements, fluorometry, liquid crystal beads, infra-red thermography and bubble size thermometry. We compare the results of these techniques with respect to the influences of voltage, electric conductivity of buffer, frequency, cage size and electrode surface. We conclude that in the culture medium thermal effects may be neglected if low voltages and an electric field-reducing phase pattern are used. Our experimental results provide explicit values for estimating the thermal effect on dielectrophoretically caged cells and show that Joule heating is best minimized by optimizing the cage geometry and reducing the buffer conductivity. The results may additionally serve to evaluate and improve theoretical predictions on field-induced effects. Based on present-day chip processing possibilities, DEP is well suited for the manipulation of cells

  15. On the evaluation of currents in a tokamak plasma during combined Ohmic and RF current drive

    International Nuclear Information System (INIS)

    Eckhartt, D.

    1986-09-01

    By taking into account the rf-generated enhancement of the plasma electric conductivity (as formulated by Fisch in the limit of weak dc electric fields) a relation is derived between the ratio of rf to Ohmically driven currents and other plasma parameters to be measured before and after the rf onset under the condition of constant net plasma current. (author)

  16. Electric contact arcing

    International Nuclear Information System (INIS)

    Cuthrell, R.E.

    1976-01-01

    Electrical contacts must function properly in many types of components used in nuclear weapon systems. Design, application, and testing of these components require detailed knowledge of chemical and physical phenomena associated with stockpile storage, stockpile testing, and operation. In the past, investigation of these phenomena has led to significant discoveries on the effects of surface contaminants, friction and wear, and the mechanics of closure on contact performance. A recent investigation of contact arcing phenomena which revealed that, preceding contact closure, arcs may occur at voltages lower than had been previously known is described. This discovery is important, since arcing may damage contacts, and repetitive testing of contacts performed as part of a quality assurance program might produce cumulative damage that would yield misleading life-test data and could prevent proper operation of the contacts at some time in the future. This damage can be avoided by determining the conditions under which arcing occurs, and ensuring that these conditions are avoided in contact testing

  17. A study of corneal endothelial changes in soft contact lens wearers using non-contact specular microscopy

    Directory of Open Access Journals (Sweden)

    Renu M Magdum

    2013-01-01

    Full Text Available Aim: To study the corneal endothelial changes after soft contact lens wear, to correlate these changes with the duration of soft contact lens wear, and to study the pattern of use and preferences of contact lens among young adults. Materials and Methods: This observational study was carried out in 100 eyes of 50 soft contact lens users aged between 19 and 27 years. Both eyes of 50 medical students who had never worn contact lenses served as controls. Data from each subject were collected using a structured questionnaire of 24 items that included demographic profile, pattern of contact lens use, symptoms, brand name, number of years worn, and hours of daily wear. These data were analyzed using Chi square for association. Specular microscopy was done using TOPCON SP-3000P. Computerized morphometry was used to evaluate central corneal thickness, size, shape, mean cellular density, hexagonality, coefficient of variation, and polymegathism of the corneal cells . Results: It was found that central corneal thickness was 0.532 ± 0.0309 mm in lens users and 0.514 ± 0.03 mm in controls, cell density was 2570.91 ± 432.06 cells/mm 2 in lens users and 2723.17 ± 327.64 cells/mm 2 in controls, while hexagonality was 54.81 ± 39.72% in lens users and 67.65 ± 36.49% in controls. Conclusion: Despite the known effects of long duration of soft contact lens use on corneal endothelial cell morphology, this study could not draw a significant correlation between them. However, a significant difference was found in the corneal endothelial thickness, cell density, and hexagonality. Among the soft contact lens users, 62% used soft disposable type while 38% used soft extended wear contact lens. Contact lenses were preferred over spectacles for better cosmetic appearance, comfort, and wider visual field.

  18. Proximity Effect in Gate Fabrication Using Photolithography Technique

    Directory of Open Access Journals (Sweden)

    Joanna Prazmowska

    2017-01-01

    Full Text Available In the paper the technological factors influencing test structure gate length were described. The influence of test structure gate placement (Schottky metallization between ohmic contacts, on mesa and on GaN surface was analyzed and discussed. Moreover, various distances between ohmic contacts paths were tested. Except for experimental investigations, simulations using finite elements method in COMSOL were performed for the same structure. The modelling results revealed crucial impact of a gap beyond the mask on the electric field distribution in photoresist layer. The smallest value of relative error of test finger lengths was observed for finger parts placed between ohmic paths on mesas. It was explained by thicker lift-off double layer between ohmic paths and the smallest Y-gap compared to test fingers placed on mesa and outside of it. Simulation did not bring an explanation of larger values of relative error for smaller distance between ohmic paths.

  19. P-type silicon drift detectors

    International Nuclear Information System (INIS)

    Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

    1995-06-01

    Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

  20. Artificial pupil versus contralateral balanced contact lens fit for presbyopia correction

    Directory of Open Access Journals (Sweden)

    Santiago García-Lázaro

    2014-04-01

    Full Text Available Purpose: To assess and compare the effects of contact lens-based artificial pupil design and contralateral balanced multifocal contact lens combination (CBMCLC on visual performance. Methods: This randomized crossover study conducted at the University of Valencia, Spain included 38 presbyopic patients using an artificial pupil contact lens in the nondominant eye and a CBMCLC. After a month of lens wear, the binocular distance visual acuity (BDVA, binocular near visual acuity (BNVA, defocus curve, binocular distance, and near contrast sensitivity and near stereoacuity (NSA were measured under photopic conditions (85 cd/m2. Moreover, BDVA and binocular distance contrast sensitivity were examined under mesopic conditions (5 cd/m2. Results: Visual acuity at an intermediate distance and near vision was better with the CBMCLC than with the artificial pupil (p<0.05. Statistically significant differences were found in contrast sensitivity between the two types of correction for distance (under mesopic conditions and for near vision, with the CBMCLC exhibiting better results in both cases (p<0.05. The mean NSA values obtained for the artificial pupil contact lens were significantly worse than those for the CBMCLC (p=0.001. Conclusion: The CBMCLC provided greater visual performance in terms of intermediate and near vision compared with the artificial pupil contact lens.

  1. Solid-contact pH-selective electrode using multi-walled carbon nanotubes.

    Science.gov (United States)

    Crespo, Gastón A; Gugsa, Derese; Macho, Santiago; Rius, F Xavier

    2009-12-01

    Multi-walled carbon nanotubes (MWCNT) are shown to be efficient transducers of the ionic-to-electronic current. This enables the development of a new solid-contact pH-selective electrode that is based on the deposition of a 35-microm thick layer of MWCNT between the acrylic ion-selective membrane and the glassy carbon rod used as the electrical conductor. The ion-selective membrane was prepared by incorporating tridodecylamine as the ionophore, potassium tetrakis[3,5-bis(trifluoromethyl)phenyl]borate as the lipophilic additive in a polymerized methylmethacrylate and an n-butyl acrylate matrix. The potentiometric response shows Nernstian behaviour and a linear dynamic range between 2.89 and 9.90 pH values. The response time for this electrode was less than 10 s throughout the whole working range. The electrode shows a high selectivity towards interfering ions. Electrochemical impedance spectroscopy and chronopotentiometry techniques were used to characterise the electrochemical behaviour and the stability of the carbon-nanotube-based ion-selective electrodes.

  2. Hydrogen and deuterium pellet injection into ohmically and additionally ECR-heated TFR plasmas

    International Nuclear Information System (INIS)

    Drawin, H.W.

    1987-01-01

    The ablation clouds of hydrogen and deuterium pellets injected into ohmically and electron cyclotron resonance heated (ECRH) plasmas of the Fontenay-aux-Roses tokamak TFR have been photographed, their emission has been measured photoelectrically. Without ECRH the pellets penetrate deeply into the plasma, the clouds are striated. Injection during ECRH leads to ablation in the outer plasma region. The position of the ECR layer has no influence on the penetration depth which is only a few centimeters. The ablation clouds show no particular structure when ECRH is applied

  3. Magnetoresistance in cobalt-contacted multi-wall carbon nanotubes

    International Nuclear Information System (INIS)

    Vinzelberg, H.; Zhao, B.; Moench, I.; Schumann, J.; Schneider, C.M.

    2005-01-01

    We present results for magnetotransport measurements on multiwall-carbon nanotubes (MWCNT) contacted by cobalt electrodes. By measuring the V(I) characteristics at constant magnetic fields and different orientation of the magnetization directions in the Co electrodes, we were able to determine both current and voltage dependences of the magnetoresistance (MR) effects. These tunneling MR values are compared with the directly measured MR at constant current with sweeping magnetic field. The V(I) curves show an ohmic behavior at 295 K and a non-linear tunneling behavior at 4.2 K. With decreasing bias current the MR increased up to 60% at 4.2 K, and with decreasing bias voltages even up to 175%. The MR disappears at high bias current (voltages) and temperatures higher than 40 K. For most of the samples the current dependences of the MR were found to be nearly symmetric upon reversing the current direction. However, in some cases we also observed a sign change of the MR as function of the applied current, which suggests an inversion of the spin polarization in one of the Co interfaces

  4. Does 6 Hours of Contact With Alginate Impression Material Affect Dental Cast Properties?

    Science.gov (United States)

    Ibrahim, Amna Adam; Alhajj, Mohammed Nasser; Khalifa, Nadia; Gilada, Magdi Wadie

    2017-06-01

    Alginate impression (irreversible hydrocolloid) material is commonly used in dental practice because it is easy to mix, low in cost, and well tolerated by patients. The material is not dimensionally stable, however; thus, it is necessary to pour the impression immediately after the molding is accomplished, or within 60 minutes if the impression is kept in 100% humidity. Excessive contact of the alginate impression with the cast model over time may affect the model's properties. In this study, the authors tested the effect of contact time between an alginate impression and type III dental stone on cast model properties. Sixty-seven cast models were obtained from a stainless steel cylinder by using irreversible hydrocolloid impression material and type III dental stone. Thirty-seven cast models were separated from the impression after 1 hour (control group) and 30 cast models were separated after 6 hours (study group). The samples were evaluated under light microscope for surface details and measured by digital caliper for dimensional stability. An indentation on the cast was made and the depth of the indentation was then measured with a digital caliper to measure hardness. The dimensional stability of the cast models was not affected when contact time was increased from 1 hour to 6 hours (P = .507). Surface details did not deteriorate when contact time was increased, as all of the samples could reproduce all details after the 1-hour and 6-hour interval periods. However, hardness was greater after 1 hour of contact time (P = .001) than after 6 hours of contact time. In conclusion, contact between alginate impression material and type III dental stone up to 6 hours did not affect the dimensional stability and richness of the surface; hardness, though, was significantly affected.

  5. Decoherence plus spontaneous symmetry breakdown generate the ''ohmic'' view of the state-vector collapse

    International Nuclear Information System (INIS)

    Ne'eman, Y.; Univ. of Texas, Austin, TX

    1993-06-01

    The collapse of the state-vector is described as a phase transition due to three features. First, there is the atrophying of indeterminacy for macroscopic objects -- including the measurement apparatus. Secondly, there is the environment decohering mechanism, as described by Zeh, Joos and others -- dominant in macroscopic objects. As a result, the classical background, an input in the Copenhagen prescriptions, is generated as an ''effective'' picture, similar to the ''effective'' introduction of Ohmic resistance or of thermodynamical variables, when going from the micro to the macroscopic; in this case, the collectivized substrate is provided by the multiplicity of photon scatterings, etc., on top of the effect of the large number of particles in macroscopic objects. Thirdly, there is the Everett ''branching'', i.e. the materialization of one of the now decoherent states, accompanied by the destruction of the other branches. By definition, quantum indeterminancy represents a symmetry; in a measurement, or in a branching, this symmetry is broken ''spontaneously'', involving a Ginzburg-Landau type potential with asymmetric minima, thus concretizing the quantum ''dice'' without the burden of ''many worlds''. The authors review and systematize the various phase transitions relating quantum to classical phenomena

  6. InP tunnel junction for InGaAs/InP tandem solar cells

    Science.gov (United States)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  7. Contact curietherapy with 32P used in diseases of the skin and visible mucous membranes

    International Nuclear Information System (INIS)

    Vlakhov, N.; Gyrdev, P.; Parusheva, D.

    1994-01-01

    Contact curietherapy with 32 P is conducted in sixty-one patients affected with keratoma senile (34), leukoplakia vulvae (15), chronic eczema (10), Bowen's disease (1) and Queyrat's disease (1). A contact technique with applicator is used. The single skin dose amounts to 5 Gy/hour. Irradiation rhythm is: alternating 5 consecutive days with 2 days rest period. The total dose per course leading to a permanent therapeutic effect (3 years) varies in the range 35 to 100 Gy/h. Optimal results are recorded in 42% of cases, very good - in 52%, and satisfactory - in 6%. A wider application of the method in hematological practice is recommended because of the low radiation exposure and absence of complications. 12 refs. (orig.)

  8. Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results

    International Nuclear Information System (INIS)

    Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Chiou, Shan-Haw; Huang, Chiung-Hui; Liu, Chia-Mei; Lin, Yu-Li; Chao, Wen-Hsuan; Yang, Ping-Hsing; Chang, Chun-Yen; Cheng, Chin-Pao

    2014-01-01

    Highlights: • The diffusion behavior was originated from high-vapor-pressure Te atom. • Te out-diffusion is main driving force to cause inter-diffusion effect. • Mid-band Ta and TaN with favored ohmic-like contact showed small diffusion tail. • Strong Ta-N bonding and high total energy suppressed interfacial layer formation. -- Abstract: This study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta–N bonding and a high total energy of −4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer

  9. Labral reconstruction with iliotibial band autografts and semitendinosus allografts improves hip joint contact area and contact pressure: an in vitro analysis.

    Science.gov (United States)

    Lee, Simon; Wuerz, Thomas H; Shewman, Elizabeth; McCormick, Frank M; Salata, Michael J; Philippon, Marc J; Nho, Shane J

    2015-01-01

    Labral reconstruction using iliotibial band (ITB) autografts and semitendinosus (Semi-T) allografts has recently been described in cases of labral deficiency. To characterize the joint biomechanics with a labrum-intact, labrum-deficient, and labrum-reconstructed acetabulum in a hip cadaveric model. The hypothesis was that labral resection would decrease contact area, increase contact pressure, and increase peak force, while subsequent labral reconstruction with ITB autografts or Semi-T allografts would restore these values toward the native intact labral state. Controlled laboratory study. Ten fresh-frozen human cadaveric hips were analyzed utilizing thin-film piezoresistive load sensors to measure contact area, contact pressure, and peak force (1) with the native intact labrum, (2) after segmental labral resection, and (3) after graft labral reconstruction with either ITB autografts or Semi-T allografts. Each specimen was examined at 20° of extension and 60° of flexion. Statistical analysis was conducted through 1-way analysis of variance with post hoc Games-Howell tests. For the ITB group, labral resection significantly decreased contact area (at 20°: 73.2%±5.38%, P=.0010; at 60°: 78.5%±6.93%, P=.0063) and increased contact pressure (at 20°: 106.7%±4.15%, P=.0387; at 60°: 103.9%±1.15%, P=.0428). In addition, ITB reconstruction improved contact area (at 20°: 87.2%±12.3%, P=.0130; at 60°: 90.5%±8.81%, P=.0079) and contact pressure (at 20°: 98.5%±5.71%, P=.0476; at 60°: 96.6%±1.13%, P=.0056) from the resected state. Contact pressure at 60° of flexion was significantly lower compared with the native labrum (P=.0420). For the Semi-T group, labral resection significantly decreased contact area (at 20°: 68.1%±12.57%, P=.0002; at 60°: 67.5%±6.70%, P=.0002) and increased contact pressure (at 20°: 105.3%±3.73%, P=.0304; at 60°: 106.8%±4.04%, P=.0231). Semi-T reconstruction improved contact area (at 20°: 87.9%±7.95%, P=.0087; at 60°: 92.9%±13

  10. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-01-01

    , the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s

  11. On Allosteric Modulation of P-Type Cu+-ATPases

    DEFF Research Database (Denmark)

    Mattle, Daniel; Sitsel, Oleg; Autzen, Henriette Elisabeth

    2013-01-01

    P-type ATPases perform active transport of various compounds across biological membranes and are crucial for ion homeostasis and the asymmetric composition of lipid bilayers. Although their functional cycle share principles of phosphoenzyme intermediates, P-type ATPases also show subclass...... of intramembranous Cu+ binding, and we suggest an alternative role for the proposed second site in copper translocation and proton exchange. The class-specific features demonstrate that topological diversity in P-type ATPases may tune a general energy coupling scheme to the translocation of compounds with remarkably...

  12. Current knowledge on biomarkers for contact sensitization and allergic contact dermatitis.

    Science.gov (United States)

    Koppes, Sjors A; Engebretsen, Kristiane A; Agner, Tove; Angelova-Fischer, Irena; Berents, Teresa; Brandner, Johanna; Brans, Richard; Clausen, Maja-Lisa; Hummler, Edith; Jakasa, Ivone; Jurakić-Tončic, Ružica; John, Swen M; Khnykin, Denis; Molin, Sonja; Holm, Jan O; Suomela, Sari; Thierse, Hermann-Josef; Kezic, Sanja; Martin, Stefan F; Thyssen, Jacob P

    2017-07-01

    Contact sensitization is common and affects up to 20% of the general population. The clinical manifestation of contact sensitization is allergic contact dermatitis. This is a clinical expression that is sometimes difficult to distinguish from other types of dermatitis, for example irritant and atopic dermatitis. Several studies have examined the pathogenesis and severity of allergic contact dermatitis by measuring the absence or presence of various biomarkers. In this review, we provide a non-systematic overview of biomarkers that have been studied in allergic contact dermatitis. These include genetic variations and mutations, inflammatory mediators, alarmins, proteases, immunoproteomics, lipids, natural moisturizing factors, tight junctions, and antimicrobial peptides. We conclude that, despite the enormous amount of data, convincing specific biomarkers for allergic contact dermatitis are yet to be described. © 2017 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  13. Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

    Energy Technology Data Exchange (ETDEWEB)

    Dodel, G; Holzhauer, E [Stuttgart Univ. (Germany). Inst. fuer Plasmaforschung; Niedermeyer, H; Endler, M; Gerhardt, J; Giannone, L.; Wagner, F; Zohm, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany)

    1991-01-01

    The 119 [mu]m laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs.

  14. Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

    International Nuclear Information System (INIS)

    Dodel, G.; Holzhauer, E.

    1991-01-01

    The 119 μm laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs

  15. Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

    International Nuclear Information System (INIS)

    Chauhan, Lalit; Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A.; Hughes, G.

    2015-01-01

    The effect of inserting ultra-thin atomic layer deposited Al 2 O 3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al 2 O 3 /p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al 2 O 3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al 2 O 3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al 2 O 3 /n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface

  16. Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al{sub 2}O{sub 3} interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Lalit [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A. [Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore 560012 (India); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

    2015-08-31

    The effect of inserting ultra-thin atomic layer deposited Al{sub 2}O{sub 3} dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al{sub 2}O{sub 3}/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al{sub 2}O{sub 3} interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al{sub 2}O{sub 3} interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al{sub 2}O{sub 3}/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface.

  17. [Sport injuries in full contact and semi-contact karate].

    Science.gov (United States)

    Greier, K; Riechelmann, H; Ziemska, J

    2014-03-01

    Karate enjoys great popularity both in professional and recreational sports and can be classified into full, half and low contact styles. The aim of this study was the analysis of sports injuries in Kyokushinkai (full contact) and traditional Karate (semi-contact). In a retrospective study design, 215 active amateur karateka (114 full contact, 101 semi-contact) were interviewed by means of a standardised questionnaire regarding typical sport injuries during the last 36 months. Injuries were categorised into severity grade I (not requiring medical treatment), grade II (single medical treatment), grade III (several outpatient medical treatments) and grade IV (requiring hospitalisation). In total, 217 injuries were reported in detail. 125 injuries (58%) occurred in full contact and 92 (42%) in semi-contact karate. The time related injury rate of full contact karateka was 1.9/1000 h compared to 1.3/1000 h of semi-contact karateka (p injuries were musculoskeletal contusions (33% full contact, 20% semi-contact), followed by articular sprains with 19% and 16%. The lower extremity was affected twice as often in full contact (40%) as in semi-contact (20%) karate. Training injuries were reported by 80% of the full contact and 77% of the semi-contact karateka. Most injuries, both in training and competition, occurred in kumite. 75% of the reported injuries of full contact and 70% of semi-contact karateka were classified as low grade (I or II). The high rate of injuries during training and kumite (sparring) points to specific prevention goals. The emphasis should be put on proprioceptive training and consistent warm-up. In the actual competition the referees play a vital role regarding prevention. © Georg Thieme Verlag KG Stuttgart · New York.

  18. Does type of first contact in depressive and bipolar disorders predict subsequent hospitalisation and risk of suicide?

    DEFF Research Database (Denmark)

    Kessing, Lars Vedel; Munk-Jørgensen, Povl

    2004-01-01

    BACKGROUND: Only a few studies have investigated how the type of first contact is associated with the risk of subsequent hospitalisation and the risk of committing suicide for patients with depressive or bipolar disorders. METHOD: All outpatients (patients in psychiatric ambulatories and community...... treatment as their first contact. Patients with depressive disorder who were admitted also had increased risk of committing suicide eventually. LIMITATIONS: The diagnoses are clinician based. CONCLUSIONS: Patients referred to inpatient treatment have a poorer long-term prognosis than patients treated...... psychiatry centres) and in-patients (patients admitted during daytime or overnight to a psychiatric hospital) with a diagnosis of depressive or bipolar disorder at first contact ever in a period from 1995 to 1999 in Denmark were identified from the Danish Psychiatric Central Research Register (DPCRR...

  19. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  20. Occupational contact dermatitis in painters - an analysis of patch test data from the Danish Contact Dermatitis Group

    DEFF Research Database (Denmark)

    Mose, Anja P; Lundov, Michael Dyrgaard; Zachariae, Claus

    2012-01-01

    Background. Painters are among the occupational groups that most commonly experience occupational contact dermatitis, but few investigations exist concerning this occupation. Objectives. To characterize painters with contact dermatitis and identify the most common allergens associated...... with the occupation. Materials and methods. All patch test results of 219 painters and 1095 matched controls registered by the Danish Contact Dermatitis Group between 2001 and 2010 were analysed. Results. Hand eczema (p contact dermatitis (p