WorldWideScience

Sample records for p-type ohmic contact

  1. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  2. Does p-type ohmic contact exist in WSe2-metal interfaces?

    Science.gov (United States)

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2015-12-01

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for

  3. Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

    2015-01-14

    Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

  4. Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions

    Energy Technology Data Exchange (ETDEWEB)

    Kassamakova, L.; Kakanakov, R. [Inst. of Appl. Phys., Plovdiv (Bulgaria). BAS; Nordell, N.; Savage, S. [Industrial Microelectronics Center, Kista (Sweden); Kakanakova-Georgieva, A.; Marinova, Ts. [Inst. of General and Inorganic Chemistry, BAS, Sofia (Bulgaria)

    1999-07-30

    The electrical and chemical properties of Pd ohmic contacts to p-type 4H-SiC, together with their thermal stability, have been studied in the annealing temperature range 600 - 700 C. The ohmic behaviour of as-deposited and annealed contacts has been checked from I - V characteristics and the contact resistivity has been determined by the linear TLM method in order to determine the electrical properties and the thermal stability. An ohmic behaviour was established after annealing at 600 C, while the lowest contact resistivity 5.5 x 10{sup -5} {omega}cm{sup 2} was obtained at 700 C. The contact structure, before and after annealing, was investigated using X-ray photoelectron spectroscopy depth analysis. As-deposited Pd films form an abrupt and chemically inert Pd/SiC interface. Annealing causes the formation of palladium silicide. After formation at 600 C the contact structure consists of unreacted Pd and Pd{sub 3}Si. During annealing at 700 C. Pd and SiC react completely and a mixture of Pd{sub 3}Si, Pd{sub 2}Si and C in a graphite state is found in the contact layer. The examination of the thermal stability shows that after a 100 h heating at 500 C, only the contacts annealed at 700 C did not suffer from a change in resistivity. This can be explained by a more complete reaction between the Pd contact layer and the SiC substrate at this higher annealing temperature. (orig.)

  5. Ohmic contacts to Gallium Nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Greco, Giuseppe [Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n. 5 - Zona Industriale, 95121 Catania (Italy); Iucolano, Ferdinando [STMicroelectronics, Stradale Primosole 50, 95121 Catania (Italy); Roccaforte, Fabrizio, E-mail: fabrizio.roccaforte@imm.cnr.it [Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n. 5 - Zona Industriale, 95121 Catania (Italy)

    2016-10-15

    Highlights: • Ohmic contacts are a crucial issue for wide band gap semiconductors devices. • This paper reviews the mechanisms of Ohmic contact formation on GaN-based materials. • Ti/Al-based contacts and multilayers (Ti/Al/X/Au) are used for n-type GaN. • Ni/Au-based bilayers are used for Ohmic contacts to p-type GaN. • Several parameters affect Ohmic contact formation to AlGaN/GaN heterostructures . • Au-free contacts are important for the integration of GaN technology on Si-fabs. - Abstract: In this review article, a comprehensive study of the mechanisms of Ohmic contact formation on GaN-based materials is presented. After a brief introduction on the physics of Ohmic contacts, a resume of the most important results obtained in literature is reported for each of the systems taken in consideration (n-type GaN, p-type GaN and AlGaN/GaN heterostructures). The optimal metallization schemes and processing conditions to obtain low resistance Ohmic contacts are presented, discussing the role of the single metals composing the stack and the modification induced by the thermal annealing, either on the metal layers or at the interface with GaN. Physical insights on the mechanism of Ohmic contact formation have been gained by correlating the temperature dependence of the electrical parameters with a morphological/structural analysis of the interface. In the case of the AlGaN/GaN systems, the influence of the heterostructure parameters on the Ohmic contacts has been taken into account adapting the classical thermionic field emission model to the presence of the two dimensional electron gas (2DEG). Finally, the state of the art of “Au-free” metallization to AlGaN/GaN heterostructures is also presented, being this latter a relevant topic for the integration of GaN technology on large scale Silicon devices fabs.

  6. Ohmic contacts to Gallium Nitride materials

    Science.gov (United States)

    Greco, Giuseppe; Iucolano, Ferdinando; Roccaforte, Fabrizio

    2016-10-01

    In this review article, a comprehensive study of the mechanisms of Ohmic contact formation on GaN-based materials is presented. After a brief introduction on the physics of Ohmic contacts, a resume of the most important results obtained in literature is reported for each of the systems taken in consideration (n-type GaN, p-type GaN and AlGaN/GaN heterostructures). The optimal metallization schemes and processing conditions to obtain low resistance Ohmic contacts are presented, discussing the role of the single metals composing the stack and the modification induced by the thermal annealing, either on the metal layers or at the interface with GaN. Physical insights on the mechanism of Ohmic contact formation have been gained by correlating the temperature dependence of the electrical parameters with a morphological/structural analysis of the interface. In the case of the AlGaN/GaN systems, the influence of the heterostructure parameters on the Ohmic contacts has been taken into account adapting the classical thermionic field emission model to the presence of the two dimensional electron gas (2DEG). Finally, the state of the art of "Au-free" metallization to AlGaN/GaN heterostructures is also presented, being this latter a relevant topic for the integration of GaN technology on large scale Silicon devices fabs.

  7. Fabrication of p-type SrCuSeF/n-type In2O3:Sn bilayer ohmic tunnel junction and its application to the back contact of CdS/CdTe solar cells

    Science.gov (United States)

    Kitabayashi, Shuya; Shiina, Yasuyoshi; Murata, Ayuki; Okamoto, Tamotsu; Wada, Takahiro

    2017-08-01

    To develop polycrystalline thin-film tandem solar cells, a SrCuSeF/In2O3:Sn (ITO) bilayer film was studied. The transparent p-type conductive SrCuSeF layer was deposited by pulsed laser deposition (PLD), and the n-type conductive ITO layer was deposited by RF sputtering. The SrCuSeF/ITO bilayer film showed ohmic I-V characteristics. A tunnel junction between the p-type SrCuSeF and n-type ITO layers was successfully formed because the p-type SrCuSeF and the n-type ITO layers had sufficiently high carrier concentrations. The SrCuSeF/ITO bilayer film was applied as the back contact of a CdS/CdTe solar cell. The photovoltaic performance of the CdS/CdTe solar cell depends considerably on the thickness of the SrCuSeF layer. The CdTe solar cell with a back contact of the SrCuSeF layer with a thickness of 34 nm and the ITO layer with a thickness of 200 nm showed a high conversion efficiency of 14.3% (V OC = 804 mV, J SC = 27.5 mA/cm2, and FF = 0.65). The conversion efficiency was much higher than that of the CdTe solar cell with the SrCuSeF single-layer back contact (11.6%) and that of the CdTe cell with the ITO single-layer back contact (2.75%).

  8. Ohmic contacts to semiconducting diamond

    Science.gov (United States)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  9. Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jungwoo, E-mail: jungwoo.oh@sematech.org [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Huang, Jeff [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Chen, Yen-Ting [Universityof Texas, Austin, TX (United States); Ok, Injo [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Jeon, Kanghoon [Universityof California, Berkeley, CA (United States); Lee, Se-Hoon [Universityof Texas, Austin, TX (United States); Sassman, Barry; Loh, Wei-Yip [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Lee, Hi-Deok [Chungnam National University (Korea, Republic of); Ko, Dea-Hong [Yonsei University (Korea, Republic of); Majhi, Prashant; Kirsch, Paul; Jammy, Raj [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States)

    2011-10-31

    We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10{sup -3}-10{sup -5} {Omega} cm{sup 2}, which is significantly higher than the 10{sup -7}-10{sup -8} {Omega} cm{sup 2} of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.

  10. High current density stability of ohmic contacts to silicon carbide

    Science.gov (United States)

    Downey, Brian P.

    The materials properties of SiC, such as wide bandgap, high breakdown electric field, and good thermal conductivity, make it an appealing option for high temperature and high power applications. The replacement of Si devices with SiC components could lead to a reduction in device size, weight, complexity, and cooling requirements along with an increase in device efficiency. One area of concern under high temperature or high current operation is the stability of the ohmic contacts. Ohmic contact degradation can cause an increase in parasitic resistance, which can diminish device performance. While contact studies have primarily focused on the high temperature stability of ohmic contacts to SiC, different failure mechanisms may arise under high current density stressing due to the influence of electromigration. In addition, preferential degradation may occur at the anode or cathode due to the directionality of current flow, known as a polarity effect. The failure mechanisms of ohmic contacts to p-type SiC under high current density stressing are explored. Complementary materials characterization techniques were used to analyze contact degradation, particularly the use of cross-sections prepared by focused ion beam for imaging using field emission scanning electron microscopy and elemental analysis using Auger electron spectroscopy. Initially the degradation of commonly studied Ni and Al-based contacts was investigated under continuous DC current. The contact metallization included a bond pad consisting of a TiW diffusion barrier and thick Au overlayer. The Ni contacts were found to degrade due to the growth of voids within the ohmic contact layer, which were initially produced during the high temperature Ni/SiC ohmic contact anneal. The Al-based contacts degraded due to the movement of Al from the ohmic contact layer to the surface of the Au bond pad, and the movement of Au into the ohmic contact layer from the bond pad. The inequality of Al and Au fluxes generated

  11. Gate tunable graphene-silicon Ohmic/Schottky contacts

    Science.gov (United States)

    Chen, Chun-Chung; Chang, Chia-Chi; Li, Zhen; Levi, A. F. J.; Cronin, Stephen B.

    2012-11-01

    We show that the I-V characteristics of graphene-silicon junctions can be actively tuned from rectifying to Ohmic behavior by electrostatically doping the graphene with a polymer electrolyte gate. Under zero applied gate voltage, we observe rectifying I-V characteristics, demonstrating the formation of a Schottky junction at the graphene-silicon interface. Through appropriate gating, the Fermi energy of the graphene can be varied to match the conduction or valence band of silicon, thus forming Ohmic contacts with both n- and p-type silicon. Over the applied gate voltage range, the low bias conductance can be varied by more than three orders of magnitude. By varying the top gate voltage from -4 to +4 V, the Fermi energy of the graphene is shifted between -3.78 and -5.47 eV; a shift of ±0.85 eV from the charge neutrality point. Since the conduction and valence bands of the underlying silicon substrate lie within this range, at -4.01 and -5.13 eV, the Schottky barrier height and depletion width can be decreased to zero for both n- and p-type silicon under the appropriate top gating conditions. I-V characteristics taken under illumination show that the photo-induced current can be increased or decreased based on the graphene-silicon work function difference.

  12. Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

    Science.gov (United States)

    Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

    2016-09-01

    Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

  13. Low Resistance Ohmic Contact for ZnSb Thin Film

    Science.gov (United States)

    Yin, Meimei; Zhong, Aihua; Luo, Jingting; Li, Fu; Zheng, Zhuanghao; Fan, Ping

    2016-12-01

    To further improve the performance and power density of thermoelectric devices, the size of the device needs to be scaled down from macroscale to microscale. Different from the macroscale device, the specific contact resistivity ρ c of the metal contact to the microscale device becomes a key point to the device's efficiency. In this study, a P type ZnSb thin film was deposited on glass substrate using a radio frequency magnetron sputtering system, followed by annealing at 325°C in an Ar atmosphere. X-ray diffraction, scanning electron microscopy, and the Hall measurement system were utilized for characterization of the ZnSb. The ohmic contact properties of metallic Co and Mo on the annealed ZnSb thin films were investigated, indicating that metallic Co has a lower specific contact resistivity ρ c to ZnSb. The effect of a diluted HCl-etch prior to Co electrode deposition was also studied. The results show that a HCl-etch is effective for the reduction of the ρ c. The dependence of ρ c on the annealing temperature was also studied. Through HCl-etch and annealing at 200°C, specific contact resistivity ρ c as low as 10-7 Ω cm2 is successfully obtained on the Co electrode, providing a good method to fabricate a highly efficient ZnSb-based micro device.

  14. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    OpenAIRE

    2014-01-01

    In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. For high temperature electronics, the material demands are high regarding functionality and stability at elevated working temperatures, during and after temperature cycling and during long time of use.  Silicon ...

  15. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  16. Edge effect in ohmic contacts on high-resistivity semiconductors

    Science.gov (United States)

    Ruzin, Arie

    2016-01-01

    Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.

  17. A survey of ohmic contacts to III-V compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Zolper, J.C.; Briggs, R.D. [Sandia National Labs., Albuquerque, NM (United States); Ren, F. [Lucent Technologies, Murray Hill, NJ (United States); Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States)

    1997-04-01

    A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-Nitride materials. At present, low resistivity ohmic contact to p-type GaN has not been obtained primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.

  18. Edge effect in ohmic contacts on high-resistivity semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, Arie

    2016-01-11

    Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors. - Highlights: • Ohmic contacts were modeled on semi-intrinsic and compensated semiconductors. • Edge-effect increases the contact current by a factor of ~2 for intermediate size contacts. • In larger and smaller contacts the current increase is smaller. • In smaller contacts the E-field edge-peak decreases. • With velocity saturation the current increase is less pronounced.

  19. High magnetic field ohmically decoupled non-contact technology

    Science.gov (United States)

    Wilgen, John [Oak Ridge, TN; Kisner, Roger [Knoxville, TN; Ludtka, Gerard [Oak Ridge, TN; Ludtka, Gail [Oak Ridge, TN; Jaramillo, Roger [Knoxville, TN

    2009-05-19

    Methods and apparatus are described for high magnetic field ohmically decoupled non-contact treatment of conductive materials in a high magnetic field. A method includes applying a high magnetic field to at least a portion of a conductive material; and applying an inductive magnetic field to at least a fraction of the conductive material to induce a surface current within the fraction of the conductive material, the surface current generating a substantially bi-directional force that defines a vibration. The high magnetic field and the inductive magnetic field are substantially confocal, the fraction of the conductive material is located within the portion of the conductive material and ohmic heating from the surface current is ohmically decoupled from the vibration. An apparatus includes a high magnetic field coil defining an applied high magnetic field; an inductive magnetic field coil coupled to the high magnetic field coil, the inductive magnetic field coil defining an applied inductive magnetic field; and a processing zone located within both the applied high magnetic field and the applied inductive magnetic field. The high magnetic field and the inductive magnetic field are substantially confocal, and ohmic heating of a conductive material located in the processing zone is ohmically decoupled from a vibration of the conductive material.

  20. A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C

    Science.gov (United States)

    Okojie, Robert S.; Evans, Laura J.; Lukco, Dorothy; Morris, Joseph P.

    2010-01-01

    A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900 C is reported. Preliminary results revealed the following: 1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 x 10(exp 19) per cubic centimeter, with specific contact resistances rhosNd's of 7.69 x 10(exp -4) and 5.81 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after rapid thermal annealing (RTA), and 5.9 x 10(exp -3) and 2.51 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after subsequent soak at 900 C for 1 h in argon, and 2) ohmic contact on n- and p-type 6H-SiC having Nd > 2 x 10(exp 19) and Na > 1 x 10(exp 20) per cubic centimeter, with rhosNd = 5 x 10(exp -5) and rhosNa = 2 X 10(exp -4) OMEGA (raised dot) square centimeter, respectively, after RTA, and rhosNd = 2.5 x 10 (exp -5) and rhosNa = 1.5 x 10(exp -4) OMEGA (raised dot) square centimeter after subsequent treatment at 900 C for 1 h in argon, respectively.

  1. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Institute of Scientific and Technical Information of China (English)

    韩超; 张玉明; 宋庆文; 汤晓燕; 张义门; 郭辉; 王悦湖

    2015-01-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.%Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10−6Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000◦C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

  2. Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implanttation

    Institute of Scientific and Technical Information of China (English)

    Guo Hui; Wang Yue-Hu; Zhang Yu-Ming; Qiao Da-Yong; Zhang Yi-Men

    2009-01-01

    By formation of an intermediate semiconductor layer(ISL)with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method(TLM)test patterns is formed on N-wells created by P+ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-tyDe 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as loW as 4.23×10~(-5) Ω·cm~2 is achieved after annealing in N_2 at 800℃ for 3 min, which iS much lower than that(>900℃)in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge~+ ion implantations.

  3. Contact metallurgy optimization for ohmic contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

    1991-01-01

    AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

  4. Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

    Science.gov (United States)

    Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

    2017-06-01

    Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

  5. Titanium nitride: A new Ohmic contact material for n-type CdS

    NARCIS (Netherlands)

    Didden, A.; Battjes, H.; Machunze, R.; Dam, B.; Van de Krol, R.

    2011-01-01

    In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath depos

  6. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Science.gov (United States)

    Han, Chao; Zhang, Yu-Ming; Song, Qing-Wen; Tang, Xiao-Yan; Zhang, Yi-Men; Guo, Hui; Wang, Yue-Hu

    2015-11-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10-6 Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 °C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing. Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).

  7. Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHEN Cong-Mian; LIU Xue-qin; YAN Zhi-Jun; GONG Heng-Xiang; WANG Yin-Yue

    2000-01-01

    The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohmic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resistivities of 2.886×10-3 and 2.040×10-4Ω.cm2 are obtained, respectively. The x-ray photoelectron spectroscopy analysis indicates that the titanium carbide formation occurs at the interface between titanium and the diamond substrate in the as-deposited state, and no TiO2 is observed.

  8. Schottky Contact of Gallium on p-Type Silicon

    Directory of Open Access Journals (Sweden)

    B.P. Modi

    2011-01-01

    Full Text Available The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed.

  9. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    Directory of Open Access Journals (Sweden)

    Polley Craig

    2011-01-01

    Full Text Available Abstract We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

  10. Temperature dependences of the contact resistivity in ohmic contacts to n{sup +}-InN

    Energy Technology Data Exchange (ETDEWEB)

    Sachenko, A. V.; Belyaev, A. E. [National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine); Boltovets, N. S. [“Orion” Research Institute (Ukraine); Brunkov, P. N.; Jmerik, V. N.; Ivanov, S. V. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kapitanchuk, L. M. [National Academy of Sciences of Ukraine, Paton Electric Welding Institute (Ukraine); Konakova, R. V., E-mail: konakova@isp.kiev.ua; Klad’ko, V. P.; Romanets, P. N.; Saja, P. O.; Safryuk, N. V.; Sheremet, V. N. [National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine)

    2015-04-15

    The temperature dependences of the contact resistivity (ρ{sub c}) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10{sup 18} cm{sup −3} in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly increasing dependences ρ{sub c}(T) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10{sup 9} cm{sup −2}. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10{sup 10} cm{sup −2}.

  11. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  12. New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

    Science.gov (United States)

    Lieneweg, Udo; Hannaman, David J.

    1987-01-01

    A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

  13. Dependence of Ohmic Contact Resistance on Barrier Thickness of AlN/GaN HEMT Structures

    Science.gov (United States)

    2010-01-01

    thickness of AlN/ GaN HEMT structures 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER...Electronics journal homepage: www.elsevier .com/locate /sseLetter Dependence of ohmic contact resistance on barrier thickness of AlN/ GaN HEMT ...Available online x The review of this paper was arranged by Prof. E. Calleja Keywords: AlN GaN HEMT Ohmic contact Heterostructure0038-1101/$ - see

  14. Structural and electrical characterization of ohmic contacts to graphitized silicon carbide.

    Science.gov (United States)

    Maneshian, Mohammad H; Lin, Ming-Te; Diercks, David; Shepherd, Nigel D

    2009-12-09

    Titanium was deposited onto silicon carbide (6H-SiC) using the 248 nm line of an excimer laser in a vacuum of 10(-6) Torr, and ohmic contacts were formed by annealing the structure at approximately 1000 degrees C. Further anneals between 1350 and 1430 degrees C did not degrade the formed contacts, and Raman analysis confirmed that sublimation of silicon from the near surface layers of the silicon carbide between the contact pads resulted in graphene formation after 5 min, 1428 degrees C anneals. The graphene formation was accompanied by a significant enhancement of ohmic behavior, and, it was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy showed that the interface between the metal and silicon carbide remained sharp and free of macroscopic defects even after 30 min, 1430 degrees C anneals. The interface was determined to be carbon rich by elemental analysis, which indicates metal carbide formation. The potential of this approach for achieving ohmic contacts and graphene formation on silicon carbide substrates is discussed. A mechanism for the sequential formation of ohmic contacts then graphene is proposed.

  15. The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects

    Directory of Open Access Journals (Sweden)

    Dahye Kim

    2016-10-01

    Full Text Available We intentionally generated surface defects in WSe2 using a low energy argon (Ar+ ion-beam. We were unable to detect any changes in lattice structure through Raman spectroscopy as expected through simulation. Meanwhile, atomic force microscopy showed roughened surfaces with a high density of large protruding spots. Defect-activated Photoluminescence (PL revealed a binding energy reduction of the W 4f core level indicating significant amounts of defect generation within the bandgap of WSe2 even at the lowest studied 300 eV ion-beam energy. The intensity ratio increase of direct PL peak demonstrated the decoupling of surface layers, which behave like consecutive defective monolayers. Electrical measurements after post-irradiation showed p-type ohmic contacts regardless of the ion-beam energy. The resulting ohmic contact contributed to an increased on/off current ratio, mobility enhancement of around 350 cm2V-1s-1 from a few cm2V-1s-1 in pristine devices and electron conduction suppression. Further increased ion-beam energy over 700 eV resulted in a high shift of threshold voltage and diminished subthreshold slope due to increased surface roughness and boosted interface scattering. The origin of the ohmic contact behavior in p-type WSe2 is expected to be from chalcogen vacancy defects of a certain size which pins the Fermi level near the valence band minimum. An optimized ion-beam irradiation process could provide solutions for fabricating ohmic contacts to transition metal dichalcogenides.

  16. Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

    OpenAIRE

    Murata, Masayuki; Hasegawa, Yasuhiro

    2013-01-01

    Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and carbon and tungsten electrodes were deposited on the bismuth nanowire in situ to achieve electrical contacts. The temperature dependence of the four-wire resistance was successfully measured for the ...

  17. Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn

    Science.gov (United States)

    Zhang, Xu; Zhang, Dongliang; Zheng, Jun; Liu, Zhi; He, Chao; Xue, Chunlai; Zhang, Guangze; Li, Chuanbo; Cheng, Buwen; Wang, Qiming

    2015-12-01

    In this study, a Ni/Al Ohmic contact on a highly doped n-type GeSn has been investigated. A specific contact resistivity as low as (2.26 ± 0.11) × 10-4 Ω cm2 was obtained with the GeSn sample annealed at a temperature of 450 °C for 30 s. The linear Ohmic behavior was attributed to the low resistance of the Ni(GeSn) phase; this behavior was determined using glancing-angle X-ray diffraction, and the quantum tunneling current through the Schottky barrier narrowed because of high doping; this phenomenon was confirmed from the contact resistance characteristics at different temperatures from 45 to 205 K.

  18. Silicon ohmic lateral-contact MEMS switch for RF applications

    Science.gov (United States)

    Rogozhin, A.; Miakonkikh, A.; Tatarintsev, A.; Lebedev, K.; Kalnov, V.; Rudenko, K.; Lukichev, V.

    2016-12-01

    Application variety and huge potential market of RF MEMS switches guarantee relentless research interest to the field. There are lots of different types of MEMS switches. Direct contact MEMS switches are simplifier for integration than capacitive MEMS switches. Lateral technology considerably simplifies the formation process. The objective of this research is to estimate characteristics of the simple direct-contact lateral MEMS switch and to understand the improvement directions. The MEMS switches were fabricated on the SOI wafers by e-beam lithography, dry etching and wet HF-etching. E-beam lithography and dry etching were used to form the cantilever and electrodes on the buried oxide layer. The structure with two control electrodes was used. IV characteristics were measured by Keithley 4200-SCS. The distance between cantilever and control electrodes was 100 nm. From the obtained IV characteristics it is clear that the devices switches at about 60 V. High control voltage could be explained by the large distance between cantilever and control electrode, and high rigidity of the cantilever. Following simulation in COMSOL Multiphysics showed that the control voltage could be decreased to 20-30 V by adding of spring element to the cantilever and device geometry modification.

  19. Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing

    Science.gov (United States)

    Katz, A.; Weir, B. E.; Chu, S. N. G.; Thomas, P. M.; Soler, M.; Boone, T.; Dautremont-Smith, W. C.

    1990-04-01

    Low resistance nonalloyed ohmic contacts of e-gun evaporated Pt/Ti to S doped n-InP 5×1017, 1×1018, and 5×1018 cm-3 have been fabricated by rapid thermal processing. The contacts to the lower doped substrates (5×1017 and 1×1018 cm-3) were rectifying as-deposited as well as after heat treatment at temperatures lower than 350 °C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum specific contact resistance of 1.5×10-5 and 5×10-6 Ω cm2, respectively, as a result of rapid thermal processing at 450 °C for 30 s. Heating at a temperature of 550 °C again yielded a Schottky contact. The contact to the 5×1018 cm-3 InP was ohmic as deposited with a specific contact resistance value of 1.1×10-4 Ω cm2. Supplying heat treatment to the contact caused a decrease of the specific contact resistance to a minimum of 8×10-7 Ω cm2 as a result of rapid thermal processing at 450 °C for 30 s. In all cases, this heat treatment caused a limited interfacial reactions between the Ti and the InP, and resulted in an almost abrupt interface. Heating at temperatures higher than 500 °C resulted in an interfacial intermixing and a mutual migration and reaction of the Ti and the semiconductor elements. The Pt/Ti bilayer structure was highly tensile as deposited (5×109 dyn cm-2) and became stress-free as a result of the interfacial reactions which took place while heating the samples to temperature of 400 °C or higher.

  20. Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

    Science.gov (United States)

    Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

    2016-11-24

    To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron

  1. A new method of making ohmic contacts to p-GaN

    Science.gov (United States)

    Hernández-Gutierrez, C. A.; Kudriavtsev, Yu.; Mota, Esteban; Hernández, A. G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V.; Casallas-Moreno, Y. L.; López-López, M.

    2016-12-01

    The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 × 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10-4 Ωcm2 was achieved for Au/Ni/p-InxGa1-xN/p-GaN ohmic contacts.

  2. Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

    Directory of Open Access Journals (Sweden)

    E. V. Anichenko

    2012-01-01

    Full Text Available The fully Cu-metalized GaAs pHEMT using developed Cu/Ge-based ohmic contacts and T-gate Ti/Mo/Cu with length of the 150 nm has been successfully fabricated for the high-frequency applications. The fabricated Cu-metalized pHEMT has a maximum drain current of 360 mA/mm, an off-state gate-drain breakdown of 7 V, and a transconductance peak of 320 mS/mm at Vds=3 V. The maximum stable gain value was about 15 dB at frequency 10 GHz. The current gain cutoff frequency of the copper-metalized device is about 60 GHz at Vds=3 V, and maximum frequency of oscillations is beyond 100 GHz. This work investigated in detail the formation of Cu/Ge ohmic contacts to n-GaAs with an atomic hydrogen preannealing step. It was shown that after the first preliminary annealing is carried out in a flow of atomic hydrogen with a flow density of atoms of 1013/1016 at. cm2 s−1 a reduction in specific contact resistance by 2/2.5 times is observed. The reduction in specific contact resistance is apparently caused by the action of the hydrogen atoms which minimise the rate of the oxidizing reactions and activate solid phase reactions forming the ohmic contact during the thermal treatment process.

  3. A semiconductor device noise model: integration of Poisson type stochastic ohmic contact conditions with semiclassical transport

    Science.gov (United States)

    Noaman, B. A.; Korman, C. E.; Piazza, A. J.

    2007-06-01

    In this paper we show an approach to couple two stochastic processes to describe the dynamics of independent carriers in semiconductor devices: the launch time of carriers from the contacts is described by independent Poisson launch processes, and the stochastic motion of carriers due to scattering inside the device is described by inhomogeneous Poisson type Markov processes according to the semiclassical transport theory. The coupling of the Poisson type stochastic launch process to the semiclassical dynamics will be shown, and the resulting Ohmic contact boundary conditions will be derived. For proof of concept, an expression for the autocovariance for terminal current noise for one point contact will be shown which can be easily extended to a real semiconductor device with multiple contacts.

  4. Ohmic and rectifying contacts on bulk AlN for radiation detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Erlbacher, Tobias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Bickermann, Matthias [CrystAl-N GmbH, Am Weichselgarten 7, 91058 Erlangen (Germany); Department of Materials Science 6 (I-MEET), University of Erlangen-Nuernberg, Martensstrasse 7, 91058 Erlangen (Germany); Frey, Lothar [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Chair of Electron Devices, University of Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany)

    2012-03-15

    In this paper we report on ohmic and rectifying contacts fabricated on undoped bulk AlN substrates for radiation detector applications. The ohmic Ni contacts exhibit negligible contact resistances. Current conduction is dominated by field enhanced thermal emission from traps 0.4 to 0.6 eV below the conduction band. The Pt Schottky contacts show excellent rectifying behaviour. In forward conduction, device current is again limited by the Poole-Frenkel effect. The Schottky barrier features very low reverse leakage currents, and voltages of up to -200 V can be applied. The capability of bulk AlN for radiation detectors at room temperature is demonstrated. Suitability is deduced from both X-ray absorption experiments and low reverse leakage currents of the fabricated Schottky diodes. Additionally, the AlN substrate is almost blind to sun light due to its wide band gap. Still, reduction of recombination sites in AlN is required to achieve maximum detector performance. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Ti/Al Ohmic Contacts to n-Type GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Gangfeng Ye

    2011-01-01

    Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

  6. Nickel ohmic contacts of high-concentration P-implanted 4H-SiC

    Institute of Scientific and Technical Information of China (English)

    Liu Chunjuan; Liu Su; Feng Jingjing; Wu Rong

    2012-01-01

    Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated.A1N/BN and graphite post-implantation annealing for ion-implanted SiC at 1650 ℃ for 30 min was conducted to electrically activate the implanted P+ ions.Ni contacts to the P+-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted (0001).The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30 × 10-6 Ω·cm2 was obtained for the P+-implanted 4H-SiC layers.The ρC values of the Ni-based implanted layers decreased with increasing P doping concentrations,and a weaker temperature dependence was observed for different samples in the 200-500 K temperature range.

  7. Nickel ohmic contacts of high-concentration P-implanted 4H-SiC

    Science.gov (United States)

    Chunjuan, Liu; Su, Liu; Jingjing, Feng; Rong, Wu

    2012-03-01

    Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated. AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650 °C for 30 min was conducted to electrically activate the implanted P+ ions. Ni contacts to the P+-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted (0001). The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30 × 10-6 Ω · cm2 was obtained for the P+-implanted 4H-SiC layers. The ρC values of the Ni-based implanted layers decreased with increasing P doping concentrations, and a weaker temperature dependence was observed for different samples in the 200-500 K temperature range.

  8. Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

    Science.gov (United States)

    Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

    2011-01-01

    We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

  9. Transparent Ohmic Contacts for Solution-Processed, Ultrathin CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; Nanayakkara, Sanjini U.; Pach, Gregory F.; Reese, Matthew O.; Hudson, Margaret H.; Dolzhnikov, Dmitriy S.; Tanygin, Vadim; Luther, Joseph M.; Talapin, Dmitri V.

    2017-01-13

    Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. We used scanning Kelvin probe microscopy to further show how the above approaches improved carrier collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A2CdTe2 (A = Na, K, Cs, N2H5), can be used in conjunction with current/light soaking to improve PCE further.

  10. Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor

    Directory of Open Access Journals (Sweden)

    I.A. Rogachev

    2016-06-01

    Full Text Available Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology.

  11. Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Bory, Benjamin F.; Janssen, René A. J.; Meskers, Stefan C. J., E-mail: s.c.j.meskers@tue.nl [Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Rocha, Paulo R. F.; Gomes, Henrique L. [Instituto de Telecomunicações, Av. Rovisco, Pais, 1, 1049 – 001, Lisboa, Portugal and Universidade do Algarve, Campus de Gambelas, 8005-139 Faro (Portugal); De Leeuw, Dago M. [Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany and King Abdulaziz University, Jeddah (Saudi Arabia)

    2014-09-22

    Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density–electroluminescence–voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements.

  12. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.

    Science.gov (United States)

    Li, Ling; Engel, Michael; Farmer, Damon B; Han, Shu-Jen; Wong, H-S Philip

    2016-04-26

    A record high current density of 580 μA/μm is achieved for long-channel, few-layer black phosphorus transistors with scandium contacts after 400 K vacuum annealing. The annealing effectively improves the on-state current and Ion/Ioff ratio by 1 order of magnitude and the subthreshold swing by ∼2.5×, whereas Al2O3 capping significantly degrades transistor performances, resulting in 5× lower on-state current and 3× lower Ion/Ioff ratio. The influences of moisture on black phosphorus metal contacts are elucidated by analyzing the hysteresis of 3-20 nm thick black phosphorus transistors with scandium and gold contacts under different conditions: as-fabricated, after vacuum annealing, and after Al2O3 capping. The optimal black phosphorus film thickness for transistors with scandium contacts is found to be ∼10 nm. Moreover, p-type performance is shown in all transistors with scandium contacts, suggesting that the Fermi level is pinned closer to the valence band regardless of the flake thickness.

  13. Method of separate determination of high-ohmic sample resistance and contact resistance

    Directory of Open Access Journals (Sweden)

    Vadim A. Golubiatnikov

    2015-09-01

    Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

  14. Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

    OpenAIRE

    E. V. Anichenko; Arykov, V. S.; Erofeev, E. V.; Kagadei, V. A.

    2012-01-01

    The fully Cu-metalized GaAs pHEMT using developed Cu/Ge-based ohmic contacts and T-gate Ti/Mo/Cu with length of the 150 nm has been successfully fabricated for the high-frequency applications. The fabricated Cu-metalized pHEMT has a maximum drain current of 360 mA/mm, an off-state gate-drain breakdown of 7 V, and a transconductance peak of 320 mS/mm at Vds=3 V. The maximum stable gain value was about 15 dB at frequency 10 GHz. The current gain cutoff frequency of the copper-metalized device ...

  15. Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Gong Rumin; Wang Jinyan; Dong Zhihua; Liu Shenghou; Yu Min; Wen, Cheng P; Hao Yilong [Insititute of Microelectronics, Peking University, Beijing, 100871 (China); Shen Bo [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Cai Yong; Zhang Baoshun [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215125 (China); Zhang Jincheng, E-mail: jywang@ime.pku.edu.c [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi' an 710071 (China)

    2010-10-06

    A novel stacked Ti/Al based Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au Ohmic contact structure is optimized. Compared with the conventional alloyed Ti/Al/Ni/Au Ohmic contact structure, the novel Ohmic contact structure can obtain much lower contact resistance and specific contact resistivity. Through analysis of x-ray diffraction spectra, cross-section transmission electron microscopy images and corresponding electron dispersive x-ray spectroscopy spectra in the novel stacked Ti/Al based Ohmic structure, the reactions between metals and the AlGaN layer were proven to be stable, uniform and continuous, which produced smooth contact interface. In addition, the top Au layer was prevented from diffusing downwards to the metal/AlGaN interface, which degraded the Ohmic performance.

  16. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

    Directory of Open Access Journals (Sweden)

    Nassim Rahimi

    2013-12-01

    Full Text Available Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and anneal process windows are investigated to achieve optimal penetration depth of Au in GaSb for low resistances. The fabrication, electrical characterization, and microstructure analysis of the metal-semiconductor interfaces created during ohmic contact formation are discussed. The characterization techniques include cross-sectional transmission electron microscopy and energy dispersive spectroscopy. Specific transfer resistances down to 0.1 Ω mm and specific contact resistances of 1 × 10−6 Ω cm2 are observed.

  17. Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements.

    Science.gov (United States)

    Murata, Masayuki; Hasegawa, Yasuhiro

    2013-09-26

    Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and carbon and tungsten electrodes were deposited on the bismuth nanowire in situ to achieve electrical contacts. The temperature dependence of the four-wire resistance was successfully measured for the bismuth nanowire, and a difference between the resistivities of the two-wire and four-wire methods was observed. It was concluded that the two-wire method was unsuitable for estimation of the resistivity due to the influence of contact resistance, even if the magnitude of the bismuth nanowire resistance was greater than the kilo-ohm order. Furthermore, Hall measurement of a 4-μm-diameter bismuth microwire was also performed as a trial, and the evaluated temperature dependence of the carrier mobility was in agreement with that for bulk bismuth, which indicates that the carrier mobility was successfully measured using this technique. PACS: 81.07.Gf.

  18. High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

    Institute of Scientific and Technical Information of China (English)

    Zhang Lin; Zhang Yi-Men; Zhang Yu-Ming; Han Chao; Ma Yong-Ji

    2009-01-01

    The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated,and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm-2.After radiation,the forward currents of the SBDs at 2 V decreased by about 50%,and the reverse currents at -200 V increased by less than 30%.Schottky barrier height (φB) of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV under 0 V irradiation bias,and decreased from 1.25 eV to 1.19 eV under -30 V irradiation bias.The degradation of φB could be explained by the variation of interface states of Schottky contacts.The on-state resistance (Rs) and the reverse current increased with the dose,which can be ascribed to the radiation defects in bulk material.The specific contact resistance (ρc) of

  19. Low temperature fabrication and doping concentration analysis of Au/Sb ohmic contacts to n-type Si

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J. Q.; Wang, C.; Zhu, T.; Wu, W. J. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Fan, J.; Tu, L. C., E-mail: tlc@hust.edu.cn [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Institute of Geophysics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-11-15

    This paper investigates low temperature ohmic contact formation of Au/Sb to n-type Si substrates through AuSb/NiCr/Au metal stacks. Liquid epitaxy growth is utilized to incorporate Sb dopants into Si substrate in AuSi melt. The best specific contact resistivity achieved is 0.003 Ω ⋅ cm{sup 2} at 425 {sup o}C. Scanning electron microscopy (SEM) reveals inverted pyramidal crater regions at the metal/semiconductor interface, indicating that AuSi alloying efficiently occurs at such sites. Secondary ion mass spectroscopy (SIMS) shows that Sb atoms are successfully incorporated into Si as doping impurities during the anneal process, and the Sb doping concentration at the contact interface is found to be higher than the solid solubility limit in a Si crystal. This ohmic contacts formation method is suitable for semiconductor fabrication processes with limited thermal budget, such as post CMOS integration of MEMS.

  20. Ohmic contacts of Au and Ag metals to n-type GdN thin films

    Directory of Open Access Journals (Sweden)

    Felicia Ullstad

    2015-05-01

    Full Text Available The rare-earth nitrides appear as attractive alternatives to dilute ferromagnetic semiconductors for spintronics device applications. Most of them combine the properties of the ferromagnet and the semiconductor, an exceedingly rare combination. In this work we have grown n-type polycrystalline semiconducting GdN layers between pre-deposited contacts made of Cr/Au and Cr/Ag. The resistivity of the GdN layers ranges from 4.4×10-4 Ωcm to 3.1×10-2 Ωcm depending on the nitrogen pressure during the growth. The electrical properties of metal/n-type GdN/metal planar junctions are investigated as a function of the temperature. The current voltage characteristics of the junctions were linear for temperatures ranging from 300 K down to 5 K, suggesting an ohmic contact between the Au or Ag metal and the n-type GdN layer.

  1. Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

    Directory of Open Access Journals (Sweden)

    Wojciech Macherzynski

    2016-01-01

    Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

  2. Sintered Cr/Pt and Ni/Au ohmic contacts to B{sub 12}P{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Frye, Clint D., E-mail: frye6@llnl.gov [Lawrence Livermore National Laboratory, Livermore, California 94550 and Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 (United States); Kucheyev, Sergei O.; Voss, Lars F.; Conway, Adam M.; Shao, Qinghui; Nikolić, Rebecca J., E-mail: nikolic1@llnl.gov [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Edgar, James H. [Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 (United States)

    2015-05-15

    Icosahedral boron phosphide (B{sub 12}P{sub 2}) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B{sub 12}P{sub 2} for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2 × 10{sup −4} Ω cm{sup 2}, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was ∼l–4 × 10{sup −4} Ω cm{sup 2} after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B{sub 12}P{sub 2} at 700 °C and a reaction layer between Ni and B{sub 12}P{sub 2} thinner than ∼25 nm at 500 °C.

  3. Ohmic-rectifying conversion of Ni contacts on ZnO and the possible determination of ZnO thin film surface polarity.

    Directory of Open Access Journals (Sweden)

    Kim Guan Saw

    Full Text Available The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001 ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Similar findings are also found on the Zn-polar surface of (0001 ZnO. The O-polar surface, however, only shows Ohmic behavior before and after annealing. The rectifying behavior observed on the Zn-polar and ZnO thin film surfaces is associated with the formation of nickel zinc oxide (Ni1-xZnxO, where x = 0.1, 0.2. The current-voltage characteristics suggest that a p-n junction is formed by Ni1-xZnxO (which is believed to be p-type and ZnO (which is intrinsically n-type. The rectifying behavior for the ZnO thin film as a result of annealing suggests that its surface is Zn-terminated. Current-voltage measurements could possibly be used to determine the surface polarity of ZnO thin films.

  4. All-vapor processing of P-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    Energy Technology Data Exchange (ETDEWEB)

    McCandless, Brian E.

    2000-03-01

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  5. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  6. Measurement of the dead layer thickness in a p-type point contact germanium detector

    Science.gov (United States)

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  7. High-Temperature Characteristics of Ti/A1/Ni/Au Ohmic Contacts to n-GaN

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yue-Zong; FENG Shi-Wei; GUO Chun-Sheng; ZHANG Guang-Chen; ZHUANG Si-Xiang; SU Rong; BAI Yun-Xia; LU Chang-Zhi

    2008-01-01

    We present the high-temperature characteristics of Ti/Al/Ni/Au(15 nm/220 nm/40nm/50nm) multiplayer contacts to n-type GaN (Nd = 3.7 × 1017 cm-3, Nd = 3.0 × 10l8 cm-3). The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the Al layer even the Ti layer.

  8. Search for Pauli exclusion principle violating atomic transitions and electron decay with a p-type point contact germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Chu, P. -H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Finnerty, P. S.; Galindo-Uribarri, A.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O’Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C. -H.; Yumatov, V.; Zhitnikov, I.

    2016-11-11

    A search for Pauli-exclusion-principle-violating K electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of s at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the X-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of s at 90% C.L. It is estimated that the Majorana Demonstrator, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation.

  9. Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.

    Science.gov (United States)

    Yan, Fengpo; Wang, Yonghao; Zhang, Jiye; Lin, Zhang; Zheng, Jinsheng; Huang, Feng

    2014-01-01

    The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency.

  10. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

    OpenAIRE

    Chung-Hua Chao; Mao-Yi Chen; Chii-Ruey Lin; Yueh-Chung Yu; Yeong-Der Yao; Da-Hua Wei

    2013-01-01

    This paper describes a fabrication and characterization of ultraviolet (UV) photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002) thin film. Plasma enhanced chemical vapor deposition (PECVD) system was employed to deposit ZnO (0002) thin films onto silicon substrates, and radio-frequency (RF) magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two differe...

  11. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  12. Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Mahajan, Somna S., E-mail: somnamahajan@gmail.com; Dhaul, Anuradha; Laishram, Robert; Kapoor, Sonalee; Vinayak, Seema; Sehgal, B.K.

    2014-04-01

    Highlights: • Ohmic contacts with four different Ti/Al metal thickness ratios were fabricated on undoped Al{sub .28}Ga{sub .72}N/GaN HEMT under various annealing cycles using Rapid thermal processor. • Ohmic contact with Ti/Al metal thickness ratio, 1/5 showed superior quality in terms of R{sub c} and surface morphology. • Ni–Al alloy segregation on the surface as analyzed by EDAX seems to be related to bumpy surface morphology. • Ohmic contact with Ti/Al metal ratio 1/5 showed the presence of TiN by X-ray diffraction analysis. This was further confirmed by SIMS analysis. • The lower level of elemental Ti and Al at the surface of the contact with Ti/Al metal thickness ratio 1/5 compared to the other contacts indicated lower oxidation possibility and therefore superior quality ohmic contacts with the metal ratio 1/5. - Abstract: In this work, ohmic contacts were formed by varying the Ti/Al thickness ratio in the metal stack of Ti/Al/Ni/Au on Al{sub .28}Ga{sub .72}N/GaN HEMT epistructure followed by annealing in the temperature range 740–860 °C by rapid thermal processor (RTP). The contacts were electrically characterized for contact resistance (R{sub c}) and the sheet resistance (R{sub s}) of AlGaN/GaN epistructure. The ohmic contacts formed by Ti/Al metal thickness ratio of 1/5 exhibited lowest R{sub c} values and better surface morphology compared to the contacts formed by other Ti/Al metal thickness ratios. The difference observed in the electrical characterization of these contacts was correlated with their X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses. The surface morphology of the ohmic metal post annealing showed two distinct regions in scanning electron microscope (SEM) images. The energy dispersive X-ray analysis (EDAX) identified these regions as Ni–Al and Au–Al rich. Ni–Al rich region is believed to be responsible for rough morphology. Further, the contact formed with Ti/Al metal thickness ratio 1

  13. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Chung-Hua Chao

    2013-01-01

    Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

  14. Au-free ohmic Ti/Al/TiN contacts to UID n-GaN fabricated by sputter deposition

    Science.gov (United States)

    Garbe, V.; Weise, J.; Motylenko, M.; Münchgesang, W.; Schmid, A.; Rafaja, D.; Abendroth, B.; Meyer, D. C.

    2017-02-01

    The fabrication and characterization of an Au-free Ti/Al/TiN (20/100/100 nm) contact stack to unintentionally doped n-GaN with TiN serving as the diffusion barrier is presented. Sputter deposition and lift-off in combination with post deposition annealing at 850 °C are used for contact formation. After annealing, contact shows ohmic behavior to n-GaN and a specific contact resistivity of 1.60 × 10-3 Ω cm2. To understand the contact formation on the microscopic scale, the contact was characterized by current-voltage measurements, linear transmission line method, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The results show the formation of Ti-N bonds at the GaN/Ti interface in the as-deposited stack. Annealing leads to diffusion of Ti, Al, Ga, and N, and the remaining metallic Ti is fully consumed by the formation of the intermetallic tetragonal Al3Ti phase. Native oxide from the GaN surface is trapped during annealing and accumulated in the Al interlayer. The TiN capping layer, however, was chemically stable during annealing. It prevented oxidation of the Ti/Al contact bilayer successfully and thus proved to be a well suitable diffusion barrier with ideal compatibility to the Ti/Al contact metallization.

  15. Magnetic, Electrical and Surface Morphological Characterization of AuGe/Ni/Au Ohmic Contact Metallization on GaAs/AlGaAs Multilayer Structures

    Directory of Open Access Journals (Sweden)

    T.S. Abhilash

    2011-01-01

    Full Text Available A process issue arising from the use of ferromagnetic Nickel in the AuGe/Ni/Au Ohmic contact metallization is studied in the context of magnetic field sensors and HEMT devices made using GaAs/AlGaAs multilayer structures with the two dimensional electron gas layer. The dependence of magnetization, contact resistance, adhesion, surface roughness and current distribution of alloyed Ohmic contacts on parameters such as Ni layer thickness, anneal temperature and Au-Ge alloy composition are discussed. The magnetization measurements provided some new and interesting insights into changes occurring in the metallization layers prior to alloying.

  16. Characteristics of Signals Originating Near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    CERN Document Server

    Aguayo, E; Avignone, F T; Barabash, A S; Barton, P J; Beene, J R; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Chan, Y-D; Christofferson, C D; Collar, J I; Combs, D C; Cooper, R J; Detwiler, J A; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Esterline, J; Fast, J E; Fields, N; Finnerty, P; Fraenkle, F M; Galindo-Uribarri, A; Gehman, V M; Giovanetti, G K; Green, M P; Guiseppe, V E; Gusey, K; Hallin, A L; Hazama, R; Henning, R; Hoppe, E W; Horton, M; Howard, S; Howe, M A; Johnson, R A; Keeter, K J; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; Leviner, L E; Loach, J C; Looker, Q; Luke, P N; MacMullin, S; Marino, M G; Martin, R D; Merriman, J H; Miller, M L; Mizouni, L; Nomachi, M; Orrell, J L; Overman, N R; Perumpilly, G; Phillips, D G; Poon, A W P; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Schubert, A G; Shima, T; Shirchenko, M; Snavely, K J; Steele, D; Strain, J; Timkin, V; Tornow, W; Varner, R L; Vetter, K; Vorren, K; Wilkerson, J F; Yakushev, E; Yaver, H; Young, A R; Yu, C -H; Yumatov, V

    2012-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  17. Characteristics of Signals Originating near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo, E. [Pacific Northwest National Laboratory (PNNL); Amman, M. [Lawrence Berkeley National Laboratory (LBNL); Avignone, F. T. [University of South Carolina/ORNL; Barabash, A.S. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Barton, P. J. [Lawrence Berkeley National Laboratory (LBNL); Beene, James R [ORNL; Bertrand Jr, Fred E [ORNL; Boswell, M. [Los Alamos National Laboratory (LANL); Brudanin, V. [Joint Institute for Nuclear Research, Dubna, Russia; Busch, M. [Duke University; Chan, Y-D [Lawrence Berkeley National Laboratory (LBNL); Christofferson, C. D. [South Dakota School of Mines & Technology, Rapid City, SD; Collar, Juan I. [University of Chicago; Combs, D. C. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Cooper, Reynold J [ORNL; Detwiler, J.A. [Lawrence Berkeley National Laboratory (LBNL); Doe, P. J. [University of Washington; Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Egorov, V. [Joint Institute for Nuclear Research, Dubna, Russia; Ejiri, H. [Osaka University; Elliott, S. R. [Los Alamos National Laboratory (LANL); Esterline, J. [Duke University; Fast, J.E. [Pacific Northwest National Laboratory (PNNL); Fields, N. [University of Chicago; Finnerty, P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Fraenkle, F. M. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Galindo-Uribarri, Alfredo {nmn} [ORNL; Gehman, V. M. [Los Alamos National Laboratory (LANL); Giovanetti, G. K. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Green, M. P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Guiseppe, V.E. [University of South Dakota; Gusey, K. [Joint Institute for Nuclear Research, Dubna, Russia; Hallin, A. L. [University of Alberta, Edmonton, Canada; Hazama, R. [Osaka University; Henning, R. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Hoppe, E.W. [Pacific Northwest National Laboratory (PNNL); Horton, M. [South Dakota School of Mines & Technology, Rapid City, SD; Howard, S. [South Dakota School of Mines and Technology; Howe, M. A. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Johnson, R. A. [University of Washington, Seattle; Keeter, K.J. [Black Hills State University, Spearfish, SD; Kidd, M. F. [Los Alamos National Laboratory (LANL); Knecht, A. [University of Washington, Seattle; Kochetov, O. [Joint Institute for Nuclear Research, Dubna, Russia; Konovalov, S.I. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Kouzes, R. T. [Pacific Northwest National Laboratory (PNNL); LaFerriere, B. D. [Pacific Northwest National Laboratory (PNNL); Leon, J. [University of Washington, Seattle; Leviner, L. E. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Loach, J.C. [Lawrence Berkeley National Laboratory (LBNL); Looker, Q. [Lawrence Berkeley National Laboratory (LBNL); Luke, P.N. [Lawrence Berkeley National Laboratory (LBNL); MacMullin, S. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Marino, M. G. [University of Washington, Seattle; Martin, R.D. [Lawrence Berkeley National Laboratory (LBNL); Merriman, J. H. [Pacific Northwest National Laboratory (PNNL); Miller, M. L. [University of Washington, Seattle; Mizouni, L. [PPNL/Univ. of South Carolina; Nomachi, M. [Osaka University; Orrell, John L. [Pacific Northwest National Laboratory (PNNL); Overman, N. R. [Pacific Northwest National Laboratory (PNNL); Perumpilly, G. [University of South Dakota; Phillips II, D. G. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Poon, A.W.P. [Lawrence Berkeley National Laboratory (LBNL); et al.

    2013-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  18. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2014-01-01

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact i

  19. Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Yan, J.; Kappers, M.J.; McAleese, C.; Humphreys, C.J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Crossley, A. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Phillips, W.A. [phconsult Ltd., 54 Convent Garden, Cambridge CB1 2HR (United Kingdom)

    2004-10-01

    The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n- and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10{sup -7} {omega} cm{sup 2} was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500 C in argon. The I-V characteristics of the Ti/Al contacts degraded when plasma treatments were performed for a longer time and/or at increased plasma pressure. However, in contrast to n-GaN, the electrical properties of the Ni/Au contacts to p-GaN and Ti/Al contacts to n-Al{sub 0.15}Ga{sub 0.85}N deteriorated following oxygen plasma treatment. X-ray photoelectron spectroscopy (XPS) was used in order to help elucidate the mechanisms behind these effects. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. A Search of Low-Mass WIMPs with p-type Point Contact Germanium Detector in the CDEX-1 Experiment

    CERN Document Server

    Zhao, W; Kang, K J; Cheng, J P; Li, Y J; Wong, H T; Lin, S T; Chang, J P; Chen, J H; Chen, Q H; Chen, Y H; Deng, Z; Du, Q; Gong, H; Hao, X Q; He, H J; He, Q J; Huang, H X; Huang, T R; Jiang, H; Li, H B; Li, J; Li, J M; Li, X; Li, X Y; Li, Y L; Lin, F K; Liu, S K; Lü, L C; Ma, H; Ma, J L; Mao, S J; Qin, J Q; Ren, J; Ruan, X C; Sharma, V; Shen, M B; Singh, L; Singh, M K; Soma, A K; Su, J; Tang, C J; Wang, J M; Wang, L; Wang, Q; Wu, S Y; Wu, Y C; Xianyu, Z Z; Xiao, R Q; Xing, H Y; Xu, F Z; Xu, Y; Xu, X J; Xue, T; Yang, L T; Yang, S W; Yi, N; Yu, C X; Yu, H; Yu, X Z; Zeng, M; Zeng, X H; Zeng, Z; Zhang, L; Zhang, Y H; Zhao, M G; Zhou, Z Y; Zhu, J J; Zhu, W B; Zhu, X Z; Zhu, Z H

    2016-01-01

    The CDEX-1 experiment conducted a search of low-mass (< 10 GeV/c2) Weakly Interacting Massive Particles (WIMPs) dark matter at the China Jinping Underground Laboratory using a p-type point-contact germanium detector with a fiducial mass of 915 g at a physics analysis threshold of 475 eVee. We report the hardware set-up, detector characterization, data acquisition and analysis procedures of this experiment. No excess of unidentified events are observed after subtraction of known background. Using 335.6 kg-days of data, exclusion constraints on the WIMP-nucleon spin-independent and spin-dependent couplings are derived.

  1. Differentiation of Bulk and Surface Events in p-type Point-Contact Germanium Detectors for Light WIMP Searches

    CERN Document Server

    Li, H B

    2013-01-01

    The p-type point-contact germanium detectors are novel techniques offering kg-scale radiation sensors with sub-keV sensitivities. They have been used for light Dark Matter WIMPs searches and may have potential applications in neutrino physics. There are, however, anomalous surface behaviour which needs to be characterized and understood. We describe the methods and results of a research program whose goals are to identify the bulk and surface events via software pulse shape analysis techniques, and to devise calibration schemes to evaluate the selection efficiency factors. Efficiencies-corrected background spectra from the low-background facility at Kuo-Sheng Neutrino Laboratory are derived.

  2. Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, A.E., E-mail: anne-elisabeth.bazin@st.com [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Michaud, J.F. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Autret-Lambert, C. [Universite Francois Rabelais, Tours, Laboratoire d' Electrodynamique des Materiaux Avances CNRS-CEA-UMR6157, Parc de Grandmont, 37200 Tours (France); Cayrel, F. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Portail, M. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications CNRS-UPR10, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M. [NOVASiC, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Alquier, D. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

    2010-07-25

    For electronic devices, good ohmic contacts are required. To achieve such contacts, the semiconductor layer has to be highly doped. The only method available to locally dope the SiC is to implant dopants in the epilayer through a mask. In this work, non-intentionally doped 3C-SiC epilayers were implanted using nitrogen or phosphorus at different energies and subsequently annealed at temperatures between 1150 deg. C and 1350 deg. C in order to form n{sup +} implanted layers. Different techniques such as Fourier Transformed InfraRed spectroscopy (FTIR), Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM) were used to characterize implanted 3C-SiC epilayers subsequently to the different annealing steps. Then, Ti-Ni contacts were carried out and the specific contact resistance ({rho}{sub C}) was determined by using circular Transfer Length Method (c-TLM) patterns. {rho}{sub C} values were investigated as a function of implanted species and contact annealing conditions, and compared to those obtained for highly doped 3C-SiC epilayers. As expected, {rho}{sub C} value is highly sensitive to post-implantation annealing. This work demonstrates that low resistance values can be achieved using nitrogen or phosphorus implantation at room temperature hence enabling device processing.

  3. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

    2016-12-01

    Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

  4. Search for Pauli Exclusion Principle Violating Atomic Transitions and Electron Decay with a P-type Point Contact Germanium Detector

    CERN Document Server

    Abgrall, N; Avignone, F T; Barabash, A S; Bertrand, F E; Bradley, A W; Brudanin, V; Busch, M; Buuck, M; Caldwell, A S; Chan, Y-D; Christofferson, C D; Chu, P -H; Cuesta, C; Detwiler, J A; Dunagan, C; Efremenko, Yu; Ejiri, H; Elliott, S R; Finnerty, P S; Galindo-Uribarri, A; Gilliss, T; Giovanetti, G K; Goett, J; Green, M P; Gruszko, J; Guinn, I S; Guiseppe, V E; Henning, R; Hoppe, E W; Howard, S; Howe, M A; Jasinski, B R; Keeter, K J; Kidd, M F; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; MacMullin, J; Martin, R D; Massarczyk, R; Meijer, S J; Mertens, S; Orrell, J L; O'Shaughnessy, C; Poon, A W P; Radford, D C; Rager, J; Rielage, K; Robertson, R G H; Romero-Romero, E; Shanks, B; Shirchenko, M; Suriano, A M; Tedeschi, D; Trimble, J E; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Wiseman, C; Xu, W; Yakushev, E; Yu, C -H; Yumatov, V; Zhitnikov, I

    2016-01-01

    A search for Pauli-exclusion-principle-violating K-alpha electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of 5.8x10^30 seconds at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the x-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of 6.8x10^30 seconds at 90 C.L. It is estimated that the MAJORANA DEMONSTRATOR, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of 76-Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation.

  5. Search for Pauli exclusion principle violating atomic transitions and electron decay with a p-type point contact germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Abgrall, N.; Bradley, A.W.; Chan, Y.D.; Mertens, S.; Poon, A.W.P. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arnquist, I.J.; Hoppe, E.W.; Kouzes, R.T.; LaFerriere, B.D.; Orrell, J.L. [Pacific Northwest National Laboratory, Richland, WA (United States); Avignone, F.T. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Barabash, A.S.; Konovalov, S.I.; Yumatov, V. [National Research Center ' ' Kurchatov Institute' ' Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bertrand, F.E.; Galindo-Uribarri, A.; Radford, D.C.; Varner, R.L.; White, B.R.; Yu, C.H. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Brudanin, V.; Shirchenko, M.; Vasilyev, S.; Yakushev, E.; Zhitnikov, I. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Busch, M. [Duke University, Department of Physics, Durham, NC (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Buuck, M.; Cuesta, C.; Detwiler, J.A.; Gruszko, J.; Guinn, I.S.; Leon, J.; Robertson, R.G.H. [University of Washington, Department of Physics, Center for Experimental Nuclear Physics and Astrophysics, Seattle, WA (United States); Caldwell, A.S.; Christofferson, C.D.; Dunagan, C.; Howard, S.; Suriano, A.M. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chu, P.H.; Elliott, S.R.; Goett, J.; Massarczyk, R.; Rielage, K. [Los Alamos National Laboratory, Los Alamos, NM (United States); Efremenko, Yu. [University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Ejiri, H. [Osaka University, Research Center for Nuclear Physics, Ibaraki, Osaka (Japan); Finnerty, P.S.; Gilliss, T.; Giovanetti, G.K.; Henning, R.; Howe, M.A.; MacMullin, J.; Meijer, S.J.; O' Shaughnessy, C.; Rager, J.; Shanks, B.; Trimble, J.E.; Vorren, K.; Xu, W. [Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States); Green, M.P. [North Carolina State University, Department of Physics, Raleigh, NC (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Guiseppe, V.E.; Tedeschi, D.; Wiseman, C. [University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Jasinski, B.R. [University of South Dakota, Department of Physics, Vermillion, SD (United States); Keeter, K.J. [Black Hills State University, Department of Physics, Spearfish, SD (United States); Kidd, M.F. [Tennessee Tech University, Cookeville, TN (United States); Martin, R.D. [Queen' s University, Department of Physics, Engineering Physics and Astronomy, Kingston, ON (Canada); Romero-Romero, E. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Vetter, K. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); University of California, Department of Nuclear Engineering, Berkeley, CA (United States); Wilkerson, J.F. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States)

    2016-11-15

    A search for Pauli-exclusion-principle-violating K{sub α} electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of 5.8 x 10{sup 30} s at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the X-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of 6.8 x 10{sup 30} s at 90% C.L. It is estimated that the Majorana Demonstrator, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of {sup 76}Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation. (orig.)

  6. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  7. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    Science.gov (United States)

    Dasgupta, Sansaptak; Nidhi, Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-04-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher ft and fmax in high electron mobility transistors (HEMTs). N-polar (0001¯) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  8. Cu{sub 2}S as ohmic back contact for CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Türck, Johannes; Siol, Sebastian; Mayer, Thomas; Klein, Andreas; Jaegermann, Wolfram, E-mail: jaegermann@surface.tu-darmstadt.de

    2015-05-01

    We prepared a back contact for CdTe solar cells with Cu{sub 2}S as primary contact. Cu{sub 2}S was evaporated on CdCl{sub 2} treated CdTe solar cells in superstrate configuration. The CdTe and CdS layers were deposited by Closed Space Sublimation. Direct interface studies with X-ray photoelectron spectroscopy have revealed a strongly reactive interface between CdTe and Cu{sub 2}S. A valence band offset of 0.4-0.6 eV has been determined. The performance of solar cells with Cu{sub 2}S back contacts was studied in comparison to cells with an Au contact that deposited onto a CdCl{sub 2}-treated CdTe surface that was chemically etched using a nitric-phosphoric etch. The solar cells were analyzed by current-voltage curves and external quantum efficiency measurements. After several post deposition annealing steps, 13% efficiency was reached with the Cu{sub 2}S back contact, which was significantly higher than the ones obtained for the NP-etched back contacts. - Highlights: • A new back contact for CdTe solar out of Cu{sub 2}S has been tested. • With a direct interface experiment the valence band offset was determined. • Post deposition heat treatment has been carried out for the solar cells. • 13% efficiency has been reached with the Cu{sub 2}S back contact.

  9. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  10. CoGeNT: A Search for Low-Mass Dark Matter using p-type Point Contact Germanium Detectors

    CERN Document Server

    Aalseth, C E; Colaresi, J; Collar, J I; Leon, J Diaz; Fast, J E; Fields, N E; Hossbach, T W; Knecht, A; Kos, M S; Marino, M G; Miley, H S; Miller, M L; Orrell, J L; Yocum, K M

    2013-01-01

    CoGeNT employs p-type point-contact (PPC) germanium detectors to search for Weakly Interacting Massive Particles (WIMPs). By virtue of its low energy threshold and ability to reject surface backgrounds, this type of device allows an emphasis on low-mass dark matter candidates (WIMP mass around 10 GeV/c2). We report on the characteristics of the PPC detector presently taking data at the Soudan Underground Laboratory, elaborating on aspects of shielding, data acquisition, instrumental stability, data analysis, and background estimation. A detailed background model is used to investigate the low energy excess of events previously reported, and to assess the possibility of temporal modulations in the low-energy event rate. We conclude that the technique is ideally suited to search for the annual modulation signature expected from dark matter particle interactions in the region of WIMP mass and coupling favored by the DAMA/LIBRA claim.

  11. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  12. Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

    Science.gov (United States)

    Takei, Yusuke; Tsutsui, Kazuo; Saito, Wataru; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Iwai, Hiroshi

    2016-04-01

    The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800-850 °C) and at high temperatures (900-950 °C). It was determined that lowering the resistance at the metal/AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts.

  13. Schottky junction/ohmic contact behavior of a nanoporous TiO(2) thin film photoanode in contact with redox electrolyte solutions.

    Science.gov (United States)

    Kaneko, Masao; Ueno, Hirohito; Nemoto, Junichi

    2011-01-01

    The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic devices. In this paper, a mesoporous TiO(2) thin film photoanode was soaked in an aqueous methanol solution using an O(2)-reducing Pt-based cathode in contact with atmospheric air on the back side. It was shown from distinct photocurrents in the cyclic voltammogram (CV) that the nanosurface of the mesoporous n-TiO(2) film forms a Schottky junction with water containing a strong electron donor such as methanol. Formation of a Schottky junction (liquid junction) was also proved by Mott-Schottky plots at the mesoporous TiO(2) thin film photoanode, and the thickness of the space charge layer was estimated to be very thin, i.e., only 3.1 nm at -0.1 V vs Ag/AgCl. On the other hand, the presence of [Fe(CN)(6)](4-) and the absence of methanol brought about ohmic contact behavior on the TiO(2) film and exhibited reversible redox waves in the dark due to the [Fe(CN)(6)](4-/3-) couple. Further studies showed that multiple Schottky junctions/ohmic contact behavior inducing simultaneously both photocurrent and overlapped reversible redox waves was found in the CV of a nanoporous TiO(2) photoanode soaked in an aqueous redox electrolyte solution containing methanol and [Fe(CN)(6)](4-). That is, the TiO(2) nanosurface responds to [Fe(CN)(6)](4-) to give ohmic redox waves overlapped simultaneously with photocurrents due to the Schottky junction. Additionally, a second step photocurrent generation was observed in the presence of both MeOH and [Fe(CN)(6)](4-) around the redox potential of the iron complex. It was suggested that the iron complex forms a second Schottky junction for which the flat band potential (E(fb)) lies near the redox potential of the iron complex.

  14. Schottky junction/ohmic contact behavior of a nanoporous TiO2 thin film photoanode in contact with redox electrolyte solutions

    Directory of Open Access Journals (Sweden)

    Masao Kaneko

    2011-02-01

    Full Text Available The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic devices. In this paper, a mesoporous TiO2 thin film photoanode was soaked in an aqueous methanol solution using an O2-reducing Pt-based cathode in contact with atmospheric air on the back side. It was shown from distinct photocurrents in the cyclic voltammogram (CV that the nanosurface of the mesoporous n-TiO2 film forms a Schottky junction with water containing a strong electron donor such as methanol. Formation of a Schottky junction (liquid junction was also proved by Mott–Schottky plots at the mesoporous TiO2 thin film photoanode, and the thickness of the space charge layer was estimated to be very thin, i.e., only 3.1 nm at −0.1 V vs Ag/AgCl. On the other hand, the presence of [Fe(CN6]4− and the absence of methanol brought about ohmic contact behavior on the TiO2 film and exhibited reversible redox waves in the dark due to the [Fe(CN6]4−/3− couple. Further studies showed that multiple Schottky junctions/ohmic contact behavior inducing simultaneously both photocurrent and overlapped reversible redox waves was found in the CV of a nanoporous TiO2 photoanode soaked in an aqueous redox electrolyte solution containing methanol and [Fe(CN6]4−. That is, the TiO2 nanosurface responds to [Fe(CN6]4− to give ohmic redox waves overlapped simultaneously with photocurrents due to the Schottky junction. Additionally, a second step photocurrent generation was observed in the presence of both MeOH and [Fe(CN6]4− around the redox potential of the iron complex. It was suggested that the iron complex forms a second Schottky junction for which the flat band potential (Efb lies near the redox potential of the iron complex.

  15. Effects of cap layer on ohmic Ti/Al contacts to Si{sup +} implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Placidi, Marcel, E-mail: marcel.placidi@cnm.es [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain); Perez-Tomas, A.; Constant, A.; Rius, G. [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain); Mestres, N. [Institut de Ciencia de Materials (ICMAB-CSIC), Campus UAB, 08193 Barcelona (Spain); Millan, J.; Godignon, P. [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain)

    2009-04-01

    A low resistivity ohmic contact to Si-implanted GaN was achieved using a metal combination of Ti/Al. The effect of a protection cap during post-implantation annealing is investigated, and how it affects the specific contact resistivity ({rho}{sub c}). Relevant differences between the protected (PR) sample with SiO{sub 2} and unprotected (UP) sample during the post-implantation annealing were observed after metal alloying at 700 deg. C. The lower values of {rho}{sub c} have been obtained for UP sample, but with very low reproducibility. In contrast, SiO{sub 2} cap layer has demonstrated its relevance in yielding a much more uniformity of a relatively low {rho}{sub c} around 10{sup -5} {Omega} cm{sup 2}. Related mechanism for the uniformity in {rho}{sub c} was discussed based on the results obtained from electrical measurements, XRD (X-ray diffraction) analysis, AFM (atomic force microscopy) and SEM (scanning electron microscopy) observations.

  16. Electrical characteristics of Ni Ohmic contact on n-type GeSn

    Energy Technology Data Exchange (ETDEWEB)

    Li, H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Lee, L. C.; Lee, C. P. [Center for Nano Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan (China); Su, L. H.; Suen, Y. W. [Department of Physics and Institute of Nano Science, National Chung Hsing University, Taichung 402, Taiwan (China)

    2014-06-16

    We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 °C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity.

  17. TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon

    Energy Technology Data Exchange (ETDEWEB)

    Cayrel, F.; Menard, O.; Alquier, D. [Laboratoire de Microelectronique de Puissance, Universite de Tours (France); Yvon, A.; Collard, E. [STMicroelectronics, Tours (France); Thierry-Jebali, N.; Brylinsky, C. [Laboratoire des Multimateriaux et Interfaces, Universite Claude Bernard Lyon1, Lyon (France)

    2012-06-15

    In this work, the Ti/Al Ohmic contact quality on n-type gallium nitride (GaN) films has been studied as a function of different process parameters such as surface cleaning procedure, etching, thickness of the deposited layers or annealing conditions. GaN epilayers, with uniform doping concentration from 1 x 10{sup 16} to 5.8 x 10{sup 18} at./cm{sup 3} were grown on sapphire or silicon substrates using AlN and/or AlGaN buffer layers. Electrical characterizations were made using circular transfer length method (cTLM) patterns with a four-probe equipment. Specific contact resistance (SCR) was then extracted from current-voltage (I-V) characteristics, for all the process conditions. Contact structures depending on experiment parameters were studied by means of (scanning) transmission electronic microscopy (STEM-TEM). Our results reveal that process parameters such as surface treatment have a lower impact than annealing temperature or metal thickness and annealing duration. Finally, SCR values of 1 x 10{sup -6} {omega} cm{sup 2} can be reproducibly achieved. Moreover, good Ohmic contacts have been obtained on etched surfaces or on low-doped layers implanted with Si. This low value demonstrates a good Ohmic contact and this large parameter process window is of high interest for future device fabrication based on GaN (planar or mesa structures). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors

    Science.gov (United States)

    Nidhi; Brown, David F.; Keller, Stacia; Mishra, Umesh K.

    2010-02-01

    Ultra-low ohmic contact resistance of 0.1 Ω mm has been obtained as a step towards a deep-recess structure using N-polar GaN-based high electron mobility transistors (HEMTs). An AlGaN etchstop layer was investigated to obtain smooth and reliable gate recess. However due to reverse polarization, AlGaN results in a polarization-induced Schottky barrier which prevents ohmic contact to the channel through the etchstop. In this work, we have proposed a novel methodology to contact the two-dimensional electron gas (2DEG) by etching through the GaN cap and the AlGaN etchstop to eliminate the barrier and angular-evaporation of metals to achieve side-alloying resulting in very low ohmic contact resistance of 0.1 Ω mm achieved to N-polar GaN 2DEG. This result is state-of-the-art for alloyed contacts achieved to GaN-based 2DEG.

  19. Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

    Science.gov (United States)

    Virshup, Ariel R.

    With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

  20. An MCMC-based waveform analysis with p-type point contact detectors in the MAJORANA DEMONSTRATOR

    Science.gov (United States)

    Shanks, Benjamin; MAJORANA Collaboration

    2017-01-01

    Statistical signal processing can be a powerful tool for extracting as much information as possible from raw data. By fitting data to a physical model of signal generation on an event-by-event basis, it can be used to perform precise event reconstruction and enable efficient background rejection. Searches for neutrinoless double-beta decay must achieve extremely low backgrounds to reach sensitivities required for discovery, and so can benefit greatly from this analysis technique. The MAJORANA DEMONSTRATOR has implemented a Markov Chain Monte Carlo (MCMC) signal processing algorithm to fit waveforms from p-type point contact (PPC) germanium detectors. After a machine learning step to tune detector fields and electronics response parameters, the MCMC algorithm is able to reconstruct the time, energy and position of interactions within the PPC detector. The parameters estimated with this method will find many applications within the DEMONSTRATOR physics program, including background identification and rejection. This will prove important as the DEMONSTRATOR aims to reach its background goal of < 3 counts/tonne/yr in the region of interest. This work is supported by the U.S. Department of Energy, Office of Science, Office of Nuclear Physics, the Particle Astrophysics and Nuclear Physics Programs of the National Science Foundation, and the Sanford Underground Research Facility.

  1. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide%异质结n+多晶硅/n型4H-SiC欧姆接触的制备

    Institute of Scientific and Technical Information of China (English)

    郭辉; 冯倩; 汤晓燕; 张义门; 张玉明

    2008-01-01

    从理论和实验的角度研究了n型4H-SiC上的多晶硅欧姆接触.在P型4H-SiC外延层上使用P+离子注入来形成TLM结构的n阱.使用LPCVD淀积多晶硅并通过P+离子注入及扩散进行掺杂,得到的多晶硅方块电阻为22Ω/□.得到的n+多晶硅/n-SiC欧姆接触的比接触电阻为3.82×10-5Ω·cm2,接触下的注入层的方块电阻为4.9kΩ/□.对n+多晶硅/n-SiC欧姆接触形成的机理进行了讨论.%Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM (transfer length method) test patterns with polysilicon structure are formed on n-wells created by phosphorus ion (P+) implantation into a Si-faced p-type 4HSiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance ρc of n+ polysilicon contact to n-type 4H-SiC as low as 3. 82 x 10-5Ω· cm2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4. 9kΩ/□. The mechanisms for n~ polysilicon ohmic contact to n-type SiC are discussed.

  2. High power terahertz emission from a single gate AlGaN/GaN field effect transistor with periodic Ohmic contacts for plasmon coupling

    Science.gov (United States)

    Onishi, Toshikazu; Tanigawa, Tatsuya; Takigawa, Shinichi

    2010-08-01

    We report on room temperature terahertz (THz) emission by a single, short gate AlGaN/GaN field effect transistor with grating Ohmic contacts. The fingers of metal contacts are fabricated at the nanoscale in length and spacing in order to work as a radiation coupler of electron plasmons in the THz range. Spectrum analysis revealed a broadband emission centered at 1.5 THz with a controlled polarization by the grating contacts. The measured output power is linearly increased with the drain input power and reached up to 1.8 μW.

  3. Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Song, X., E-mail: xi.song@st.com [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Biscarrat, J. [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Michaud, J.-F.; Cayrel, F. [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Portail, M. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications CNRS, rue Bernard Gregory, 06560 Valbonne (France); Collard, E. [STMicroelectronics, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Alquier, D. [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

    2011-09-15

    Highlights: {yields} N, P and N and P co-implantation in 3C-SiC. {yields} Closed to 100% of activation for N implanted/annealed sample at 1400 {sup o}C. {yields} Low surface roughness (<5 nm) after annealing by using carbon protective layer. {yields} Ultra-low SCR (2.6 x 10{sup -6} {Omega} cm{sup 2}) with Ti/Ni contact on N implanted/annealed sample. - Abstract: In this work, non-intentionally doped cubic silicon carbide (3C-SiC) epilayers grown on (1 0 0) silicon substrates were implanted using nitrogen (N), phosphorus (P) implantations or their co-implantation (N and P). After annealing from 1150 to 1400 {sup o}C, Secondary Ion Mass Spectroscopy (SIMS), Atomic Force Microscopy (AFM), Fourier Transformed InfraRed spectroscopy (FTIR), Scanning Spreading Resistance Microscopy (SSRM) and Scanning Transmission Electron Microscopy (STEM) analysis were performed. Specific contact resistances ({rho}{sub c}) of Ti/Ni ohmic contacts were determined using Circular Transfer Length Method (c-TLM) patterns. Our work shows that co-implantation, experimentally investigated for the first time in 3C-SiC, is not beneficial for the doping efficiency. According to the silicon substrate, the post-implantation annealing is limited to 1400 {sup o}C. Consecutively to this limit, the total recovering of the lattice does not seem to be possible, whatever are the implanted species. Moreover, as the crystal damages increase when increasing the atomic mass of the implanted species, a comparative study using SSRM measurements proved that, for the same post-implantation annealing treatment, the resistivity of implanted layers depend on the doping species. As a consequence, the lowest {rho}{sub c} value (2.8 x 10{sup -6} {Omega} cm{sup 2}) has been obtained (using Ti/Ni 25/100 nm pattern) for a 1400 {sup o}C-30 min annealing consecutively to the nitrogen implantation. This value is among the best values obtained on implanted 3C-SiC layers in the literature. Furthermore, for this annealing

  4. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Smith, M. D.; Parbrook, P. J., E-mail: peter.parbrook@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland); School of Engineering, University College Cork, Cork T12 YN60 (Ireland); O' Mahony, D. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland); Conroy, M.; Schmidt, M. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland); Department of Chemistry, University College Cork, Cork T12 YN60 (Ireland)

    2015-09-14

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

  5. Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

    Science.gov (United States)

    Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

    2015-12-05

    Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed

  6. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

    2015-10-21

    This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

  7. Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts

    Science.gov (United States)

    1993-12-01

    transfer system with eight stations. The eight stations include remote plasma cleaning, uv-photoemission, XPS, AES, LEED, Raman spectroscopy, temperature...that plasma processing has not damaged the surface. The in situ Raman 10I I I system mentioned in previous reports is operational and will be...indicated that the reaction zones consisted of Ti5Si3 and TiC. The corresponding electrical properties exhibited considerable stability except after an

  8. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

    Science.gov (United States)

    Liu, Huan; Cheng, Aijie; Lin, Zhaojun; Cui, Peng; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao

    2017-03-01

    Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure field-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution, it is found that with device scaling, the effect of the diffused Ohmic contact metal atoms on the electron mobility is enhanced. Then, a theoretical calculation related to different scattering mechanisms was adopted and it was verified this enhanced effect is due to the enhanced polarization Coulomb field (PCF) scattering.

  9. Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures

    Science.gov (United States)

    Andrianov, N. A.; Kobelev, A. A.; Smirnov, A. S.; Barsukov, Yu. V.; Zhukov, Yu. M.

    2017-03-01

    Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a BCl3 plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The primary factor behind this effect is the noticeable lowering of a potential barrier on the GaN surface through the formation of nitrogen vacancies that act as donors and, correspondingly, a rise in the surface concentration of electrons.

  10. Role of carbon in the formation of ohmic contact in Ni/4H-SiC and Ni/Ti/4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siad, M., E-mail: siadmenouar@yahoo.fr [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Abdesslam, M.; Chami, A.C. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria)

    2012-07-01

    In this work, we focus on the role of carbon in the Ni and Ni/Ti contacts on n-type 4H-SiC. The contacts, formed on the backside of the wafers C-face by electron gun evaporation and annealed at 950 Degree-Sign C, were studied by Raman spectroscopy (RS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The results show that titanium acts as a diffusion barrier for Si and C preventing the formation of the unfavourable phase NiSi and interacts with carbon to form TiC. The transformation of carbon to graphitic structure (in Ni/Ti/SiC) considerably lowers the sheet resistance and greatly improves the ohmic contact.

  11. Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

    Energy Technology Data Exchange (ETDEWEB)

    Meriggi, Laura, E-mail: l.meriggi.1@research.gla.ac.uk; Ding, Ying; Thayne, Iain G.; Sorel, Marc [Electronic and Nanoscale Engineering, School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom); Steer, Matthew J. [Electronic and Nanoscale Engineering, School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom); Quantum Device Solutions, The West of Scotland Science Park, Block 7 Kelvin Campus, Glasgow G20 0TH (United Kingdom); MacGregor, Calum [Quantum Device Solutions, The West of Scotland Science Park, Block 7 Kelvin Campus, Glasgow G20 0TH (United Kingdom); Ironside, Charles N. [Department of Imaging and Applied Physics, Curtin University, Perth, Western Australia 6845 (Australia)

    2015-02-14

    We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in Al{sub x}In{sub 1−x}Sb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area.

  12. Ultrafast Dynamics of Hole Injection and Recombination in Organometal Halide Perovskite Using Nickel Oxide as p-Type Contact Electrode.

    Science.gov (United States)

    Corani, Alice; Li, Ming-Hsien; Shen, Po-Shen; Chen, Peter; Guo, Tzung-Fang; El Nahhas, Amal; Zheng, Kaibo; Yartsev, Arkady; Sundström, Villy; Ponseca, Carlito S

    2016-04-01

    There is a mounting effort to use nickel oxide (NiO) as p-type selective electrode for organometal halide perovskite-based solar cells. Recently, an overall power conversion efficiency using this hole acceptor has reached 18%. However, ultrafast spectroscopic investigations on the mechanism of charge injection as well as recombination dynamics have yet to be studied and understood. Using time-resolved terahertz spectroscopy, we show that hole transfer is complete on the subpicosecond time scale, driven by the favorable band alignment between the valence bands of perovskite and NiO nanoparticles (NiO(np)). Recombination time between holes injected into NiO(np) and mobile electrons in the perovskite material is shown to be hundreds of picoseconds to a few nanoseconds. Because of the low conductivity of NiO(np), holes are pinned at the interface, and it is electrons that determine the recombination rate. This recombination competes with charge collection and therefore must be minimized. Doping NiO to promote higher mobility of holes is desirable in order to prevent back recombination.

  13. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    Science.gov (United States)

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  14. Effects of ultra-vacuum and space environment on contact ohmic resistance: LDEF experiment AO 138-11

    Science.gov (United States)

    Assie, Jean-Pierre; Perotto, Alfred

    1992-01-01

    The FRECOPA experimentation of chemical resistance of electrical connector contacts, as described, has evidenced the detrimental time variations of nickel plated conductors and gilded copper contacts, irrespective of crimping storage or metal peening conditions. With a view to reorient aluminum technology a silvered aluminum conductor/gilded aluminum contact solution was evaluated.

  15. Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Yang, W.F. [Xiamen University, Department of Physics, Xiamen (China); National University of Singapore, Department of Materials Science and Engineering, Singapore (Singapore); Liu, Z.G.; Xie, Y.N.; Cai, J.F.; Liu, S.; Wu, Z.Y. [Xiamen University, Department of Physics, Xiamen (China); Gong, H. [National University of Singapore, Department of Materials Science and Engineering, Singapore (Singapore)

    2012-06-15

    This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs. (orig.)

  16. A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Gao Yong; Wang Cai-Lin

    2004-01-01

    A novel type of p+ (SiGe)-n--n+ heterojunction switching power diode with high-speed capability is presented to overcome the drawbacks of existing power diodes. The improvement is achieved by using a p+-n+ mosaic layer electrons and holes simultaneously. Compared with conventional p+(SiGe)-n--n+ diodes, the ideal ohmic contact p+ (SiGe)-n--n+ diodes have about one third of the reverse recovery time and a half of peak reverse recovery current.Furthermore, the softness factor increases nearly two times and the leakage current decreases 1-2 orders of magnitude.These improvements are achieved without resorting special process step to lower the carrier lifetime and thus the devices could be easily integrated into power ICs. The Ge percentage content of p+ (SiGe) layer is an important parameter for the optimal device design.

  17. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

    Science.gov (United States)

    Takhar, Kuldeep; Akhil Kumar, S.; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar

    2016-08-01

    Here we have demonstrated AlGaN/GaN based high electron mobility transistors with scaled source extension regions using non-alloyed ohmic contacts to two-dimensional electron gas (2-DEG). We show that the scaling of the extension region has profound impact on the device radio frequency (RF) response and the performance peaks at an optimum extension region length. The unity current gain (fT) and power gain frequencies (fmax) have been found to be 79.6 and 96.2 GHz, respectively, for a 260 nm gate length (Lg) and 120 nm extension region length. The devices show a very large fT × Lg product of 20.7 GHz μm at the optimum extension length. The presence of the optimum extension length and the equivalence of source extension and gate length scaling may serve as additional design rules for high performance HEMTs.

  18. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.

    2010-04-27

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  19. Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

    Science.gov (United States)

    Gaddy, Benjamin E.; Kingon, Angus I.; Irving, Douglas L.

    2013-05-01

    Ohmic RF-MEMS switches hold much promise for low power wireless communication, but long-term degradation currently plagues their reliable use. Failure in these devices occurs at the contact and is complicated by the fact that the same asperities that bear the mechanical load are also important to the flow of electrical current needed for signal processing. Materials selection holds the key to overcoming the barriers that prevent widespread use. Current efforts in materials selection have been based on the material's (or alloy's) ability to resist oxidation as well as its room-temperature properties, such as hardness and electrical conductivity. No ideal solution has yet been found via this route. This may be due, in part, to the fact that the in-use changes to the local environment of the asperity are not included in the selection criteria. For example, Joule heating would be expected to raise the local temperature of the asperity and impose a non-equilibrium thermal gradient in the same region expected to respond to mechanical actuation. We propose that these conditions should be considered in the selection process, as they would be expected to alter mechanical, electrical, and chemical mechanisms in the vicinity of the surface. To this end, we simulate the actuation of an Ohmic radio frequency micro electro mechanical systems switch by using a multi-scale method to model a current-carrying asperity in contact with a polycrystalline substrate. Our method couples continuum solutions of electrical and thermal transport equations to an underlying molecular dynamics simulation. We present simulations of gold-nickel asperities and substrates in order to evaluate the influence of alloying and local order on the early stages of contact actuation. The room temperature response of these materials is compared to the response of the material when a voltage is applied. Au-Ni interactions are accounted for through modification of the existing Zhou embedded atom method

  20. NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

    Institute of Scientific and Technical Information of China (English)

    林孟喆; 曹青; 颜廷静; 张书明; 陈良惠

    2009-01-01

    The Ni/Au contact was treated with oxalic acid after annealing in O2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

  1. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

    Science.gov (United States)

    Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2016-05-01

    We investigated a V-based electrode for the realization of low ohmic-contact resistivity in n-type AlGaN with a high AlN molar fraction characterized by the circular transmission line model. The contact resistivity of n-type Al0.62Ga0.38N prepared using the V/Al/Ni/Au electrode reached 1.13 × 10-6 Ω cm2. Using this electrode, we also demonstrated the fabrication of UV light-emitting diodes (LEDs) with an emission wavelength of approximately 300 nm. An operating voltage of LED prepared using a V/Al/Ni/Au electrode was 1.6 V lower at 100 mA current injection than that prepared using a Ti/Al/Ti/Au electrode, with a specific contact resistance of approximately 2.36 × 10-4 Ω cm2 for n-type Al0.62Ga0.38N.

  2. Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes.

    Science.gov (United States)

    Cui, Xu; Shih, En-Min; Jauregui, Luis A; Chae, Sang Hoon; Kim, Young Duck; Li, Baichang; Seo, Dongjea; Pistunova, Kateryna; Yin, Jun; Park, Ji-Hoon; Choi, Heon-Jin; Lee, Young Hee; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Dean, Cory R; Hone, James C

    2017-08-09

    Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve low-temperature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kΩ.μm at a carrier density of 5.3 × 10(12)/cm(2). This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.

  3. Limits on light WIMPs from the CDEX-1 experiment with a p-type point-contact germanium detector at the China Jingping Underground Laboratory

    CERN Document Server

    Yue, Q; Kang, K J; Cheng, J P; Li, Y J; Lin, S T; Chang, J P; Chen, N; Chen, Q H; Chen, Y H; Chuang, Y C; Deng, Z; Du, Q; Gong, H; Hao, X Q; He, H J; He, Q J; Huang, H X; Huang, T R; Jiang, H; Li, H B; Li, J M; Li, J; Li, X; Li, X Y; Li, Y L; Liao, H Y; Lin, F K; Liu, S K; Lv, L C; Ma, H; Mao, S J; Qin, J Q; Ren, J; Ruan, X C; Shen, M B; Singh, L; Singh, M K; Soma, A K; Su, J; Tang, C J; Tseng, C H; Wang, J M; Wang, L; Wang, Q; Wong, H T; Wu, S Y; Wu, Y C; Xianyu, Z Z; Xiao, R Q; Xing, H Y; Xu, F Z; Xu, Y; Xu, X J; Xue, T; Yang, L T; Yang, S W; Yi, N; Yu, C X; Yu, H; Yu, X Z; Zeng, X H; Zeng, Z; Zhang, L; Zhang, Y H; Zhao, M G; Zhou, Z Y; Zhu, J J; Zhu, W B; Zhu, X Z; Zhu, Z H

    2014-01-01

    We report results of a search for light Dark Matter WIMPs with CDEX-1 experiment at the China Jingping Underground Laboratory, based on 53.9 kg-days of data from a p-type point-contact germanium detector enclosed by a NaI(Tl) crystal scintillator as anti-Compton detector. All events above the analysis threshold of 475 eVee can be quantitatively accounted for with the understood background channels, and there is no excess of residual events. An order of magnitude improvement in the sensitivities of spin-independent elastic cross-section over our previous results is achieved. Part of the allowed regions at WIMP mass of 6-20 GeV are probed and excluded.

  4. Limits on light weakly interacting massive particles from the CDEX-1 experiment with a p -type point-contact germanium detector at the China Jinping Underground Laboratory

    Science.gov (United States)

    Yue, Q.; Zhao, W.; Kang, K. J.; Cheng, J. P.; Li, Y. J.; Lin, S. T.; Chang, J. P.; Chen, N.; Chen, Q. H.; Chen, Y. H.; Chuang, Y. C.; Deng, Z.; Du, Q.; Gong, H.; Hao, X. Q.; He, H. J.; He, Q. J.; Huang, H. X.; Huang, T. R.; Jiang, H.; Li, H. B.; Li, J. M.; Li, J.; Li, J.; Li, X.; Li, X. Y.; Li, Y. L.; Liao, H. Y.; Lin, F. K.; Liu, S. K.; Lü, L. C.; Ma, H.; Mao, S. J.; Qin, J. Q.; Ren, J.; Ren, J.; Ruan, X. C.; Shen, M. B.; Singh, L.; Singh, M. K.; Soma, A. K.; Su, J.; Tang, C. J.; Tseng, C. H.; Wang, J. M.; Wang, L.; Wang, Q.; Wong, H. T.; Wu, S. Y.; Wu, Y. C.; Wu, Y. C.; Xianyu, Z. Z.; Xiao, R. Q.; Xing, H. Y.; Xu, F. Z.; Xu, Y.; Xu, X. J.; Xue, T.; Yang, L. T.; Yang, S. W.; Yi, N.; Yu, C. X.; Yu, H.; Yu, X. Z.; Zeng, X. H.; Zeng, Z.; Zhang, L.; Zhang, Y. H.; Zhao, M. G.; Zhou, Z. Y.; Zhu, J. J.; Zhu, W. B.; Zhu, X. Z.; Zhu, Z. H.; CDEX Collaboration

    2014-11-01

    We report results of a search for light dark matter weakly interacting massive particles (WIMPs) with CDEX-1 experiment at the China Jinping Underground Laboratory, based on 53.9 kg-days of data from a p -type point-contact germanium detector enclosed by a NaI(Tl) crystal scintillator as anti-Compton detector. The event rate and spectrum above the analysis threshold of 475 eVee are consistent with the understood background model. Part of the allowed regions for WIMP-nucleus coherent elastic scattering at WIMP mass of 6-20 GeV are probed and excluded. Independent of interaction channels, this result contradicts the interpretation that the anomalous excesses of the CoGeNT experiment are induced by dark matter, since identical detector techniques are used in both experiments.

  5. Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siad, M., E-mail: siadmenouar@yahoo.fr [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Abdesselam, M. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria); Souami, N. [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Chami, A.C. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria)

    2011-10-01

    In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950 deg. C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E{sub {alpha}} = 3.2 MeV, nuclear reaction analysis (NRA) at E{sub d} = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.

  6. Electroless deposition of NiWB alloy on p-type Si(1 0 0) for NiSi contact metallization

    Energy Technology Data Exchange (ETDEWEB)

    Duhin, A. [Department of Physical Electronics, Engineer Faculty, Tel-Aviv University, Ramat-Aviv 69978 (Israel)], E-mail: alla.douhin@gmail.com; Sverdlov, Y. [Department of Physical Electronics, Engineer Faculty, Tel-Aviv University, Ramat-Aviv 69978 (Israel); Feldman, Y. [Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100 (Israel); Shacham-Diamand, Y. [Department of Physical Electronics, Engineer Faculty, Tel-Aviv University, Ramat-Aviv 69978 (Israel)

    2009-10-30

    Recently, we have proposed a novel method to form NiSi contacts using electroless plating of Ni-alloys (NiP, NiWP, NiWB) on p-type Si(1 0 0) modified by aminopropyltriethoxysilane (APTS) activated with Pd-citrate [A. Duhin, Y. Sverdlov, Yishay Feldman, Y. Shacham-Diamand, Microelectron. Eng. 84 (2007) 2506]. In this work we focus on NiWB thin films that were formed by this method. Alkali metal free electroless plating was developed using dimethylamine-borane (DMAB) and tungstatic acid (H{sub 2}WO{sub 4}) as a reducing agent and a source of tungsten ions, respectively. Using this method we succeeded to receive relatively high tungsten concentration (maximum value of 19-21 at%) in the electroless deposited NiWB films with good adhesion to the Si-substrate. In this paper, the advantages of using the APTS activated with Pd-citrate for NiWB alloy deposition on the Si substrate is discussed. The chemically deposited NiWB samples were annealed for 1-2 h in vacuum (<10{sup -6} Torr) forming the silicide layer. The annealing temperatures were 650 deg. C for NiWB alloys. X-ray diffraction (XRD) measurement confirmed the presence of NiSi phase after annealing. In addition the WSi{sub 2} phase was formed. The results are reported and summarized.

  7. The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN%Ni/Ag/Ti/Au与p-GaN的欧姆接触性能及光反射率

    Institute of Scientific and Technical Information of China (English)

    黄亚平; 刘硕; 云峰; 丁文; 王越; 王宏; 赵宇坤; 张烨; 郭茂峰; 侯洵

    2014-01-01

    The ohmic reflectivity of Ni/Ag/Ti/Au in contact with p-GaN is studied. It is found that under different thickness values of Ni, different annealing temperatures and different annealing atmospheres, the performances of Ni/Ag/Ti/Au electrode are greatly changed. The contact resistivity is measured using the transmission line model. The reflectivity of the electrode is investigated by using a spectrophotometer. The results reveal that the thinner the Ni metal layer, the higher its reflectivity is, in addition, the thickness value of Ni metal has a little influence on contact resistivity. There appears an abrupt decrease in reflectivity of electrode after annealing at a temperature higher than 400 ◦C. It is noticed that the reflectivity decreases more sharply after annealing in oxygen atmosphere than in nitrogen atmosphere. However, annealing in oxygen atmosphere is more helpful to reduce the contact resistivity. The comprehensive evaluations of the contact resistivity and reflectivity indicate that the better performances of Ni (1 nm)/Ag/Ti/Au electrode after rapid annealing in oxygen atmosphere at 400 ◦C are achieved: its contact resistance reaches 5.5 × 10-3 Ω·cm2 and reflectivity rises up to 85%at 450 nm. Light emitting diode (LED) of vertical structure is fabricated with an optimal electrode. The LED under an injection current of 350 mA can achieve the following working parameters: the working voltage is 3.2 V, the optical output power is 270 mW, and the electro-optical conversion efficiency is 24%.%研究了不同Ni厚度的Ni/Ag/Ti/Au电极在不同退火温度和退火气氛下与p-GaN之间的欧姆接触性能以及电极的光反射率的变化.采用矩形传输线模型对各电极的比接触电阻率进行测算,利用分光光度计对电极在不同波长下的反射率进行测量.结果表明, Ni金属层的厚度越小,电极的光反射率越高,而Ni层厚度对比接触电阻率的影响较小;当退火温度高于400◦C后,电极的

  8. Fabrication of CdS/CdTe solar cells with transparent p-type conductive BaCuSeF back contact

    Science.gov (United States)

    Yamamoto, Koichi; Sakakima, Hiroshi; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Wada, Takahiro

    2015-08-01

    BaCuSeF films were applied to CdS/CdTe solar cells as back electrodes. The interfaces between the CdTe and BaCuSeF layers in the CdS/CdTe solar cells with BaCuSeF back contact deposited at substrate temperatures (TS) of 200 and 300 °C were analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). We clearly observed many dislocations in the CdTe layer in the CdS/CdTe solar cell with the BaCuSeF layer deposited at TS = 300 °C. We also observed a reaction layer of Cu2.72Te2 between the BaCuSeF and CdTe layers in both solar cells. We concluded that (1) the substrate temperature for the pulsed laser deposition of the BaCuSeF layer and (2) the interface between the CdTe and BaCuSeF layers are important factors for the performance of the CdTe solar cells. We obtained high conversion efficiency of 8.31% for a solar cell with a BaCuSeF layer deposited at TS = 200 °C on a CdTe surface etched in a NH3 aqueous solution. The highest conversion efficiency of 9.91% was obtained for a solar cell with a CdTe surface etched in a bromide-bromate solution.

  9. Peltier-Effect-Induced Correction to Ohmic Resistance

    Science.gov (United States)

    Cheremisin, M. V.

    2001-02-01

    The standard ohmic measurements by means of two extra leads contain an additional thermal correction to resistance. The current results in heating(cooling) at first(second) sample contact due to Peltier effect. The contacts temperatures are different. The measured voltage is the sum of the ohmic voltage swing and Peltier effect induced thermopower which is linear on current. As a result, the thermal correction to resistance measured exists at $I\\to 0$. The correction should be in comparison with ohmic resistance. Above some critical frequency dependent on thermal inertial effects the thermal correction disappears.

  10. High current density contacts for photoconductive semiconductor switches

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Hjalmarson, H.P.; Loubriel, G.M.; McLaughlin, D.L.; Zutavern, F.J.

    1993-08-01

    The current densities implied by current filaments in GaAs photoconductive semiconductor switches (PCSS) are in excess of 1 MA/cm{sup 2}. As the lateral switches are tested repeatedly, damage accumulates at the contacts until electrical breakdown occurs across the surface of the insulating region. In order to improve the switch lifetime, the incorporation of n- and p-type ohmic contacts in lateral switches as well as surface geometry modifications have been investigated. By using p-type AuBe ohmic contacts at the anode and n-type AuGe ohmic contacts at the cathode, contact lifetime improvements of 5--10x were observed compared to switches with n-type contacts at both anode and cathode. Failure analysis on samples operated for 1--1,000 shots show that extensive damage still exists for at least one contact on all switches observed and that temperatures approaching 500{degrees}C are can be reached. However, the n-type AuGe cathode is often found to have no damage observable by scanning electron microscopy (SEM). The observed patterns of contact degradation indicate directions for future contact improvements in lateral switches.

  11. Optical and Electrical Effects of p-type μc-SiOx:H in Thin-Film Silicon Solar Cells on Various Front Textures

    Directory of Open Access Journals (Sweden)

    Chao Zhang

    2014-01-01

    Full Text Available p-type hydrogenated microcrystalline silicon oxide (µc-SiOx:H was developed and implemented as a contact layer in hydrogenated amorphous silicon (a-Si:H single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al, and tunable refractive index make p-type µc-SiOx:H a promising alternative to the commonly used p-type hydrogenated microcrystalline silicon (µc-Si:H contact layers. In this work, p-type µc-SiOx:H layers were fabricated with a conductivity of up to 10−2 S/cm and a Raman crystallinity of above 60%. Furthermore, we present p-type µc-SiOx:H films with a broad range of optical properties (2.1 eV < band gap E04<2.8 eV and 1.6 < refractive index n<2.6. These properties can be tuned by adapting deposition parameters, for example, the CO2/SiH4 deposition gas ratio. A conversion efficiency improvement of a-Si:H solar cells is achieved by applying p-type µc-SiOx:H contact layer compared to the standard p-type µc-Si:H contact layer. As another aspect, the influence of the front side texture on a-Si:H p-i-n solar cells with different p-type contact layers, µc-Si:H and µc-SiOx:H, is investigated. Furthermore, we discuss the correlation between the decrease of Voc and the cell surface area derived from AFM measurements.

  12. Impact of Premetallization Surface Preparation on Nickel-based Ohmic Contacts to Germanium Telluride: An X-ray Photoelectron Spectroscopic Study.

    Science.gov (United States)

    Aldosari, Haila M; Simchi, Hamed; Ding, Zelong; Cooley, Kayla A; Yu, Shih-Ying; Mohney, Suzanne E

    2016-12-21

    Surfaces of polycrystalline α-GeTe films were studied by X-ray photoelectron spectroscopy (XPS) after different treatments in an effort to understand the effect of premetallization surface treatments on the resistance of Ni-based contacts to GeTe. UV-O3 is often used to remove organic contaminants after lithography and prior to metallization; therefore, UV-O3 treatment was used first for 10 min prior to ex situ treatments, which led to oxidation of both Ge and Te to GeOx (x surface without prior UV-O3 treatment. Ar(+) ion etching, H2O, and (NH4)2S treatments create a surface richer in Ge compared to the HCl treatment, after which the surface is Te-rich. However, (NH4)2S also oxidizes Ge and gradually etches the GeTe film. All treated surfaces showed poor stability upon prolonged exposure to air, revealing that even (NH4)2S does not passivate the GeTe surface. The refined transfer length method (RTLM) was used to measure the contact resistance (Rc) of as-deposited Ni-based contacts to GeTe as a function of premetallization surface preparation. HCl-treated samples had the highest Rc (0.036 ± 0.002 Ω·mm), which was more than twice that of the other surface treatments. This increase in Rc is attributed to formation of the Ni1.29Te phase at the Ni/GeTe interface due to an abundance of Te at the surface after HCl treatment. In general, treatments that resulted in Ge-rich surfaces offered lower Rc.

  13. Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen.

    Science.gov (United States)

    Luo, Yi; Bai, Yiming; Han, Yanjun; Li, Hongtao; Wang, Lai; Wang, Jian; Sun, Changzheng; Hao, Zhibiao; Xiong, Bing

    2016-05-16

    Indium tin oxide (ITO)/ indium oxide (InxO) double layer structure was adopted as the transparent conduction and light scattering function layer to improve the light extraction efficiency of the GaN-based blue LEDs. The double layer structure was first deposited in one run by electron beam evaporation using ITO and Indium as the source respectively, and then annealed in an oxygen environment. This method can fabricate transparent electrode with microstructure and low specific contact resistivity one time free from lithography and etching, which makes the fabrication process simple and at a ower cost. For the 220 nm ITO/ 170 nm InxO double layer sample annealed at 600°C for 15 min in oxygen, measurement results show that its root mean square of roughness of the surface microstructure can be as high as 85.2 nm which introduces the strongest light scattering. Its light transmittance at 450 nm can maintain 92.4%. At the same time, it can realize lower specific contact resistivity with p-InGaN. Compared with the GaN-based blue LEDs with only 220 nm ITO electrode, the light output power of the LEDs with 220 nm ITO/ 170 nm InxO double layer structure can be increased about 58.8%, and working voltage at 20 mA injection current is decreased about 0.23 V due to the enhanced current spreading capability. The light output power improvement is also theoretically convinced by finite difference time domain simulations.

  14. CdS/CdTe solar cells with MoOx as back contact buffers

    Science.gov (United States)

    Lin, Hao; Xia, Wei; Wu, Hsiang N.; Tang, Ching W.

    2010-09-01

    Ohmic back contacts for CdS/CdTe solar cells with MoOx as the contact buffer have been demonstrated. With contacts such as MoOx/Ni and MoOx/Al, cell efficiencies comparable to those with conventional back contacts have been produced. Thermal stress tests indicate that MoOx is effective in suppressing metal diffusion into p-CdTe. The usefulness of MoOx is attributed to its unusually high work function which is needed to match that of p-type CdTe in producing contacts of low resistance.

  15. Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Western, Ned J., E-mail: n.western@unsw.edu.au; Perez-Wurfl, Ivan; Wenham, Stuart R.; Bremner, Stephen P. [Photovoltaics Centre of Excellence, UNSW, Sydney NSW 2052 (Australia)

    2015-07-28

    Characterisation results are presented for ohmic contacts to passivated crystalline silicon, formed using the point-contacting by localised dielectric breakdown technique. Self aligned contact is made between the metal and heavily doped surface regions through an intrinsic a-Si:H passivation layer. Local doping is provided by a laser using a standard technique identical to that for selective emitter formation. Our results for gate metals of Au, Al, and Ti show that the technique does not rely on reactivity between the dielectric and the metal, excluding metal induced crystallisation from the contacting process. Diffusion of the gate metal into the dielectric is observed in transmission electron microscope images suggesting high temperatures are present locally during the breakdown process. The technique is equally applicable to contacting of n and p-type silicon, making it a potential alternative for ohmic contacting to silicon to passivated rear surfaces.

  16. Au/Zn Contacts to rho-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

    Science.gov (United States)

    Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

    1994-01-01

    The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

  17. Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

    Science.gov (United States)

    Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

    2015-07-01

    Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

  18. Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes

    Institute of Scientific and Technical Information of China (English)

    ZHU Yan-Xu; XU Chen; HAN Jun; SHEN Guang-Di

    2007-01-01

    @@ GaN-based light-emitting diodes (LEDs) with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay (20 (A)). An Ag (3000 (A)) omni-directional reflector covers the p-type contact. The n-type contact is a Ti/Al planar film with a 10-μm-width Ti/Al stripe.The Ti/Al stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.

  19. Ohmic Dissipation in Mini-Neptunes

    Science.gov (United States)

    Pu, Bonan; Valencia, Diana

    2017-09-01

    In the presence of a magnetic field and weakly ionizing winds, ohmic dissipation is expected to take place in the envelopes of Jovian and lower-mass planets alike. While the process has been investigated on the former, there have been no studies done on mini-Neptunes so far. From structure and thermal evolution models, we determine that the required energy deposition for halting the contraction of mini-Neptunes increases with planetary mass and envelope fraction. Scaled to the insolation power, the ohmic heating needed is small: ∼ {10}-5 orders of magnitude lower than for exo-Jupiters ∼ {10}-2. Conversely, from solving the magnetic induction equation, we find that ohmic energy is dissipated more readily for lower-mass planets and those with larger envelope fractions. Combining these two trends, we find that ohmic dissipation in hot mini-Neptunes is strong enough to inflate their radii (∼ {10}15 W for {T}{eq}=1400 {{K}}). The implication is that the radii of hot mini-Neptunes may be attributed in part to ohmic heating. Thus, there is a trade-off between ohmic dissipation and H/He content for hot mini-Neptunes, adding a new degeneracy for the interpretation of the composition of such planets. In addition, ohmic dissipation would make mini-Neptunes more vulnerable to atmospheric evaporation.

  20. Investigations of niobium carbide contact for carbon-nanotube-based devices

    Science.gov (United States)

    Huang, L.; Chor, E. F.; Wu, Y.; Guo, Z.

    2010-03-01

    Single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with Nb contacts have been fabricated and upon annealing in vacuum at 700 °C for 1 h, niobium carbide (Nb2C) is formed at the Nb/SWCNT interface. The Nb2C/SWCNT contacts demonstrate a very small Schottky barrier height of ~ 18 meV (decreased by > 80% relative to that of pristine Nb/SWCNT contact of ~ 98 meV) to p-type transport. This is attributed to the higher work function of Nb2C (~5.2 eV) than Nb (~4.3 eV) and better bonding between Nb2C and SWCNTs. The performance of Nb2C-contacted SWCNT FETs is as follows: the p-channel ON current is as high as 0.5 µA at VDS = 0.1 V, the ION/IOFF ratio is up to ~ 105 and the subthreshold slope is ~ 550 mV/dec, which is as good as that of titanium carbide (TiC-) and Pd-contacted SWCNT FETs. Compared with TiC, Nb2C contacts yield more unipolar p-type SWCNT FETs, as a result of the Nb2Cs higher work function. More importantly, Nb2C contacts can form near-ohmic contacts to both large-(>=1.6 nm) and small-diameter (~1 nm) SWCNTs, while Pd can only form near-ohmic contacts for large-diameter SWCNTs. Moreover, the Nb2C contacts demonstrate good stability in air.

  1. Investigations of niobium carbide contact for carbon-nanotube-based devices

    Energy Technology Data Exchange (ETDEWEB)

    Huang, L; Chor, E F [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Blk E3 02-07, Engineering Drive 3, Singapore 117576 (Singapore); Wu, Y [Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, WS2, 03-25, 1 Engineering Drive 3, Singapore 117576 (Singapore); Guo, Z, E-mail: g0403704@nus.edu.sg [Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)

    2010-03-05

    Single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with Nb contacts have been fabricated and upon annealing in vacuum at 700 deg. C for 1 h, niobium carbide (Nb{sub 2}C) is formed at the Nb/SWCNT interface. The Nb{sub 2}C/SWCNT contacts demonstrate a very small Schottky barrier height of {approx} 18 meV (decreased by > 80% relative to that of pristine Nb/SWCNT contact of {approx} 98 meV) to p-type transport. This is attributed to the higher work function of Nb{sub 2}C ({approx}5.2 eV) than Nb ({approx}4.3 eV) and better bonding between Nb{sub 2}C and SWCNTs. The performance of Nb{sub 2}C-contacted SWCNT FETs is as follows: the p-channel ON current is as high as 0.5 {mu}A at V{sub DS} = 0.1 V, the I{sub ON}/I{sub OFF} ratio is up to {approx} 10{sup 5} and the subthreshold slope is {approx} 550 mV/dec, which is as good as that of titanium carbide (TiC-) and Pd-contacted SWCNT FETs. Compared with TiC, Nb{sub 2}C contacts yield more unipolar p-type SWCNT FETs, as a result of the Nb{sub 2}Cs higher work function. More importantly, Nb{sub 2}C contacts can form near-ohmic contacts to both large-({>=}1.6 nm) and small-diameter ({approx}1 nm) SWCNTs, while Pd can only form near-ohmic contacts for large-diameter SWCNTs. Moreover, the Nb{sub 2}C contacts demonstrate good stability in air.

  2. Piezoresistance in p-type silicon revisited

    DEFF Research Database (Denmark)

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads;

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find that the ...

  3. Heavily doped polysilicon-contact solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.; Arienzo, M.; Iles, P. A.

    1985-01-01

    The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

  4. P–n junction diodes with polarization induced p-type graded In x Ga1–x N layer

    Science.gov (United States)

    Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

    2017-10-01

    In this study, p–n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped In x Ga1–x N layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded In x Ga1–x N layers needed to be capped with a thin Mg-doped In x Ga1–x N layer to make good ohmic contacts and to reduce the on-resistance of the p–n diodes. The Pol-p–n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

  5. Effect of silver growth temperature on the contacts between Ag and ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    LI XinKun; LI QingShan; LIANG DeChun; XU YanDong; XIE XiaoJun

    2009-01-01

    Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were depos-ited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts be-tween Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150℃ and 200℃. Ohmic contacts were formed while the growth temperatures were lower than 150℃ or higher than 200℃. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.

  6. Effect of silver growth temperature on the contacts between Ag and ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures,200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150 ℃ and 200℃. Ohmic contacts were formed while the growth temperatures were lower than 150℃ or higher than 200 ℃. After analysis,the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.

  7. High Temperature Reliability of Refractory Metal Ohmic Contacts to Diamond

    Science.gov (United States)

    1992-07-01

    No. 7, July 1992 (( The Electrochemical Society . Inc, 2001 Phys. Chem, 87. 169 (1983). New York (1989) 14 Rt G Gilbert, M J T. Jordan. and S C Smith...No. 7. July 1992 &0 The Electrochemical Society . Inc: fibms (14) This process utilizes conventional microelec- , , to., , tronic techniques Briefly...1992 (0 The Electrochemical Society . Inc 2003 10 640 RESIS TANCI S0 3 620 IF 4 Z 0 EMPERAIURE 510T 60* 0 0 20 &0 60 80 100 120 140 0 20 40 60 80 100 120

  8. Ohmic Contacts for Technology for Frequency Agile Digitally Synthesized Transmitters

    Science.gov (United States)

    2010-07-01

    Catalyzed by Ru) Gold potassium cyanide 0.2 g/L Hydrazine hydrate 4ml/L NaOH (pH adjustment) As needed PH 12.2 Temperature 70 - 80°C Table V. Second...electroless Au bath (auto-catalytic). [7] Au Bath #2 (Auto-catalytic) Gold potassium cyanide 5.8 g/L Potassium cyanide 6.5 g/L KOH 11.2 g/L KBH4...result in a non- uniform plating potential (and a non-uniform deposition rate) across the wa- fer. Alternatively, a selective electroless process can

  9. Fundamentals and practice of metal contacts to wide band gap semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Borysiewicz, M.A.; Kaminska, E.; Mysliwiec, M.; Wzorek, M.; Piotrowska, A. [Institute of Electron Technology, Warsaw (Poland); Kuchuk, A. [Institute of Electron Technology, Warsaw (Poland); V.E. Lashkaryov Institute of Semiconductor Physics, Kyiv (Ukraine); Barcz, A.; Dynowska, E. [Institute of Electron Technology, Warsaw (Poland); Institute of Physic PAS, Warsaw (Poland); Di Forte-Poisson, M.A. [Alcatel-Thales III-V Lab, Marcoussis (France); Giesen, C. [AIXTRON SE, Herzogenrath (Germany)

    2012-03-15

    Presented are the theoretical and experimental fundamentals of the fabrication of ohmic contacts to n- and p-type wide band gap semiconductors such as SiC and GaN. In particular, the Ni-Si/n-SiC, Al-Ti/p-SiC, Ti-Al/n-GaN and Ni-Au/p-GaN systems are discussed with the focus on the thermally activated chemical reactions taking place at the metal-semiconductor interface, that lead to the appearance of ohmic behaviour in the contact. Examples of reactions at very intimate interfaces are shown, which are irresolvable using even such sophisticated characterisation methods as high-resolution transmission electron microscopy and can only be explained using modelling. The issue of thermal stability of the contacts is discussed and the introduction of specifically designed diffusion barriers (eg. Ta-Si-N) into the contact metallisation stack is presented as a solution improving drastically the thermal stability of the contacts without degrading their electrical properties. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Evolution of plant P-type ATPases

    Directory of Open Access Journals (Sweden)

    Christian N.S. Pedersen

    2012-02-01

    Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

  11. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    Science.gov (United States)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  12. P-type transparent conducting oxides

    Science.gov (United States)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

  13. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    Science.gov (United States)

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds.

  14. Role of vacancies in tuning the electronic properties of Au-MoS{sub 2} contact

    Energy Technology Data Exchange (ETDEWEB)

    Su, Jie, E-mail: sujie0105@mail.nwpu.edu.cn, E-mail: lpfeng@nwpu.edu.cn; Li, Ning; Zhang, Yingying; Feng, Liping, E-mail: sujie0105@mail.nwpu.edu.cn, E-mail: lpfeng@nwpu.edu.cn; Liu, Zhengtang [State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, Shaanxi, 710072 (China)

    2015-07-15

    Understanding the electronic properties between molybdenum disulfide (MoS{sub 2}) and metal electrodes is vital for the designing and realization of nanoelectronic devices. In this work, influence of intrinsic vacancies in monolayer MoS{sub 2} on the electronic structure and electron properties of Au-MoS{sub 2} contacts is investigated using first-principles calculations. Upon formation of vacancies in monolayer MoS{sub 2}, both tunnel barriers and Schottky Barriers between metal Au and monolayer MoS{sub 2} are decreased. Perfect Au-MoS{sub 2} top contact exhibits physisorption interface with rectifying character, whereas Au-MoS{sub 2} contact with Mo-vacancy shows chemisorption interface with Ohmic character. Partial density of states and electron density of defective Au-MoS{sub 2} top contacts are much higher than those of perfect one, indicating the lower contact resistance and higher electron injection efficiency of defective Au-MoS{sub 2} top contacts. Notably, Mo-vacancy in monolayer MoS{sub 2} is beneficial to get high quality p-type Au-MoS{sub 2} top contact, whereas S-vacancy in monolayer MoS{sub 2} is favorable to achieve high quality n-type Au-MoS{sub 2} top contact. Our results provide guidelines for designing and fabrication of novel 2D nanoelectronic devices.

  15. Role of vacancies in tuning the electronic properties of Au-MoS2 contact

    Directory of Open Access Journals (Sweden)

    Jie Su

    2015-07-01

    Full Text Available Understanding the electronic properties between molybdenum disulfide (MoS2 and metal electrodes is vital for the designing and realization of nanoelectronic devices. In this work, influence of intrinsic vacancies in monolayer MoS2 on the electronic structure and electron properties of Au-MoS2 contacts is investigated using first-principles calculations. Upon formation of vacancies in monolayer MoS2, both tunnel barriers and Schottky Barriers between metal Au and monolayer MoS2 are decreased. Perfect Au-MoS2 top contact exhibits physisorption interface with rectifying character, whereas Au-MoS2 contact with Mo-vacancy shows chemisorption interface with Ohmic character. Partial density of states and electron density of defective Au-MoS2 top contacts are much higher than those of perfect one, indicating the lower contact resistance and higher electron injection efficiency of defective Au-MoS2 top contacts. Notably, Mo-vacancy in monolayer MoS2 is beneficial to get high quality p-type Au-MoS2 top contact, whereas S-vacancy in monolayer MoS2 is favorable to achieve high quality n-type Au-MoS2 top contact. Our results provide guidelines for designing and fabrication of novel 2D nanoelectronic devices.

  16. Ohmic Heating: Concept and Applications-A Review.

    Science.gov (United States)

    Kaur, Nimratbir; Singh, A K

    2016-10-25

    Ohmic heating, also known as Joule heating, electrical resistance heating, and direct electrical resistance heating, is a process of heating the food by passing electric current. In ohmic heating the energy is dissipated directly into the food. Electrical conductivity is a key parameter in the design of an effective ohmic heater. A large number of potential applications exist for ohmic heating, including blanching, evaporation, dehydration, fermentation, sterilization, pasteurization, and heating of foods. Beyond heating, applied electric field under ohmic heating causes electroporation of cell membranes, which increase extraction rates, and reduce gelatinization temperature and enthalpy. Ohmic heating results in faster heating of food along with maintenance of color and nutritional value of food. Water absorption index, water solubility index, thermal properties, and pasting properties are altered with the application of ohmic heating. Ohmic heating results in pre-gelatinized starches, which reduce energy requirement during processing. But its higher initial cost, lack of its applications in foods containing fats and oils, and less awareness limit its use.

  17. Ohmic Dissipation in the Atmospheres of Hot Jupiters

    CERN Document Server

    Perna, Rosalba; Rauscher, Emily

    2010-01-01

    Hot Jupiter atmospheres exhibit fast, weakly-ionized winds. The interaction of these winds with the planetary magnetic field generates drag on the winds and leads to ohmic dissipation of the induced electric currents. We study the magnitude of ohmic dissipation in representative, three-dimensional atmospheric circulation models of the hot Jupiter HD 209458b. We find that ohmic dissipation can reach or exceed 1% of the stellar insolation power in the deepest atmospheric layers, in models with and without dragged winds. Such power, dissipated in the deep atmosphere, appears sufficient to slow down planetary contraction and explain the typically inflated radii of hot Jupiters. This atmospheric scenario does not require a top insulating layer or radial currents that penetrate deep in the planetary interior. Circulation in the deepest atmospheric layers may actually be driven by spatially non-uniform ohmic dissipation. A consistent treatment of magnetic drag and ohmic dissipation is required to further elucidate t...

  18. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    Science.gov (United States)

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  19. High performance MoS2 TFT using graphene contact first process

    Directory of Open Access Journals (Sweden)

    Chih-Shiang Chang Chien

    2017-08-01

    Full Text Available An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS. Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vgp-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.

  20. Ohmic model for electrodeposition of metallic ions

    Energy Technology Data Exchange (ETDEWEB)

    Gliozzi, A.S. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 29, 10129 Torino (Italy); Alexe-Ionescu, A.L. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 29, 10129 Torino (Italy); Department of Physics, University Politehnica of Bucharest, Splaiul Independentei 313, 060042 Bucharest (Romania); Barbero, G., E-mail: giovanni.barbero@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 29, 10129 Torino (Italy)

    2015-10-23

    An ohmic model to describe the electrodeposition of metallic ions on the electrodes is proposed. We assume that the ionic distribution is homogeneous across the electrolytic cell, and that the ionic current is due to the bulk electric field. The nucleation in the electrodeposition is supposed to be well described by a kinetic equation at the electrode, taking into account the neutralization of metallic ions on the electrodes. Two cases are considered. In the first case the characteristic time describing the neutralization of the ions is supposed to be negligible with respect to the flight time of the ions across the cell. In this framework the bulk electric field coincides with the external electric field, and our analysis gives analytical formulae for the surface density of deposited ions and for the electric current in the external circuit. The case where the two characteristic times are comparable, and the effective electric field in the bulk depends on the surface deposition, is considered too. In this case the ordinary differential equations describing the ionic distribution and the adsorption phenomenon have to be solved numerically. The agreement between the presented model and the experimental results published by several groups is reasonably good.

  1. Developing and modelling of ohmic heating for solid food products

    DEFF Research Database (Denmark)

    Feyissa, Aberham Hailu; Frosch, Stina

    such as meat and seafood is not industrially utilized yet. Therefore, the aim of the current work is to model and develop the ohmic heating technology for heating of solid meat and seafood. A 3D mathematical model of coupled heat transfer and electric field during ohmic heating of meat products has been......Heating of solid foods using the conventional technologies is time-consuming due to the fact that heat transfer is limited by internal conduction within the product. This is a big challenge to food manufactures who wish to heat the product faster to the desired core temperature and to ensure more...... uniform quality across the product. Ohmic heating is one of the novel technologies potentially solving this problem by allowing volumetric heating of the product and thereby reducing or eliminating temperature gradients within the product. However, the application of ohmic heating for solid food products...

  2. Ohmic scaling based on current diffusive ballooning mode

    Energy Technology Data Exchange (ETDEWEB)

    Yagi, Masatoshi; Itoh, Sanae [Kyushu Univ., Kasuga, Fukuoka (Japan). Research Inst. for Applied Mechanics; Fukuyama, Atsushi; Itoh, Kimitaka

    1996-01-01

    Based on the anomalous transport model due to current diffusive ballooning mode turbulence, the global energy confinement time in a tokamak with Ohmic heating is theoretically studied. Relations to empirical scaling laws are also discussed. (author)

  3. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei

    2009-03-11

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

  4. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  5. Ohmic Heating: An Emerging Concept in Organic Synthesis.

    Science.gov (United States)

    Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

    2017-06-12

    The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing

    Science.gov (United States)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2013-10-01

    Excimer laser annealing of phosphorus-implanted p-type germanium substrate with various laser energy densities for n+/p junction were investigated. The effects of laser energy density on the redistribution of dopant, surface morphology, and recrystallization of the amorphous Ge induced by ion implantation were characterized. A low specific contact resistivity of 1.61×10-6 Ω·cm2 was achieved from Al/n-Ge ohmic contact, in which phosphorus-implanted Ge was annealed at a laser energy density of 250 mJ/cm2, tailoring a small phosphorus diffusion length, high activation level, and low dopant loss. A well-behaved Ge n+/p diode with a rectification ratio up to 1.99×105 was demonstrated.

  7. Ohmic Inflation of Hot Jupiters: an Analytical Approach

    Science.gov (United States)

    Ginzburg, Sivan; Sari, Re'em

    2015-12-01

    Many giant exoplanets in close orbits have observed radii which exceed theoretical predictions.One suggested explanation for this discrepancy is heat deposited deep inside the atmospheres of these hot Jupiters.We present an analytical model for the evolution of such irradiated, and internally heated gas giants, and derive scaling laws for their cooling rates and radii.We estimate the Ohmic dissipation resulting from the interaction between the atmospheric winds and the planet's magnetic field, and apply our model to Ohmically heated planets.Our model can account for the observed radii of many inflated planets, but not the most extreme ones.We show that Ohmically heated planets have already reached their equilibrium phase and they no longer contract.We show that it is possible to re-inflate planets, but we confirm that re-heating timescales are longer by about a factor of 30 than cooling times.

  8. The role of Ohmic heating in dc magnetron sputtering

    Science.gov (United States)

    Brenning, N.; Gudmundsson, J. T.; Lundin, D.; Minea, T.; Raadu, M. A.; Helmersson, U.

    2016-12-01

    Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The secondary electron emission yield {γ\\text{SE}} is identified as the key parameter determining the relative importance of the two processes. For a conventional 5 cm diameter planar dc magnetron, Ohmic heating is found to be more important than sheath energization for secondary electron emission yields below around 0.1.

  9. Quantum dissipative dynamics of a bistable system in the sub-Ohmic to super-Ohmic regime

    Science.gov (United States)

    Magazzù, Luca; Carollo, Angelo; Spagnolo, Bernardo; Valenti, Davide

    2016-05-01

    We investigate the quantum dynamics of a multilevel bistable system coupled to a bosonic heat bath beyond the perturbative regime. We consider different spectral densities of the bath, in the transition from sub-Ohmic to super-Ohmic dissipation, and different cutoff frequencies. The study is carried out by using the real-time path integral approach of the Feynman-Vernon influence functional. We find that, in the crossover dynamical regime characterized by damped intrawell oscillations and incoherent tunneling, the short time behavior and the time scales of the relaxation starting from a nonequilibrium initial condition depend nontrivially on the spectral properties of the heat bath.

  10. Ohmic Dissipation in the Interiors of Hot Jupiters

    CERN Document Server

    Huang, Xu

    2012-01-01

    We present models of ohmic heating in the interiors of hot jupiters in which we decouple the interior and the wind zone by replacing the wind zone with a boundary temperature Tiso and magnetic field Bphi0. Ohmic heating influences the contraction of gas giants in two ways: by direct heating within the convection zone, and by heating outside the convection zone which increases the effective insulation of the interior. We calculate these effects, and show that internal ohmic heating is only able to slow the contraction rate of a cooling gas giant once the planet reaches a critical value of internal entropy. We determine the age of the gas giant when ohmic heating becomes important as a function of mass, Tiso and induced Bphi0. With this survey of parameter space complete, we then adopt the wind zone scalings of Menou (2012) and calculate the expected evolution of gas giants with different levels of irradiation. We find that,with this prescription of magnetic drag, it is difficult to inflate massive planets or t...

  11. Model for electrical conductivity of muscle meat during Ohmic heating

    NARCIS (Netherlands)

    Sman, van der R.G.M.

    2017-01-01

    A model is presented for predicting the electrical conductivity of muscle meat, which can be used for the evaluation of Ohmic heating. The model computes the conductivity as a function of composition, temperature and microstructure. The muscle meat is thought to be composed of protein, water, salt.

  12. Extended Heat Deposition in Hot Jupiters: Application to Ohmic Heating

    Science.gov (United States)

    Ginzburg, Sivan; Sari, Re'em

    2016-03-01

    The observed radii of many giant exoplanets in close orbits exceed theoretical predictions. One suggested origin for this discrepancy is heat deposited deep inside the atmospheres of these “hot Jupiters”. Here, we study extended power sources that distribute heat from the photosphere to the deep interior of the planet. Our analytical treatment is a generalization of a previous analysis of localized “point sources”. We model the deposition profile as a power law in the optical depth and find that planetary cooling and contraction halt when the internal luminosity (i.e., cooling rate) of the planet drops below the heat deposited in the planet’s convective region. A slowdown in the evolutionary cooling prior to equilibrium is possible only for sources that do not extend to the planet’s center. We estimate the ohmic dissipation resulting from the interaction between the atmospheric winds and the planet’s magnetic field, and apply our analytical model to ohmically heated planets. Our model can account for the observed radii of most inflated planets, which have equilibrium temperatures of ≈1500-2500 K and are inflated to a radius of ≈ 1.6{R}J. However, some extremely inflated planets remain unexplained by our model. We also argue that ohmically inflated planets have already reached their equilibrium phase, and no longer contract. Following Wu & Lithwick, who argued that ohmic heating could only suspend and not reverse contraction, we calculate the time it takes ohmic heating to re-inflate a cold planet to its equilibrium configuration. We find that while it is possible to re-inflate a cold planet, the re-inflation timescales are longer by a factor of ≈ 30 than the cooling time.

  13. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  14. Extended Heat Deposition in Hot Jupiters: Application to Ohmic Heating

    CERN Document Server

    Ginzburg, Sivan

    2015-01-01

    Many giant exoplanets in close orbits have observed radii which exceed theoretical predictions. One suggested explanation for this discrepancy is heat deposited deep inside the atmospheres of these "hot Jupiters". Here, we study extended power sources which distribute heat from the photosphere to the deep interior of the planet. Our analytical treatment is a generalization of a previous analysis of localized "point sources". We model the deposition profile as a power law in the optical depth and find that planetary cooling and contraction halt when the internal luminosity (i.e. cooling rate) of the planet drops below the heat deposited in the planet's convective region. A slowdown in the evolutionary cooling prior to equilibrium is possible only for sources which do not extend to the planet's center. We estimate the Ohmic dissipation resulting from the interaction between the atmospheric winds and the planet's magnetic field, and apply our analytical model to Ohmically heated planets. Our model can account fo...

  15. Monster Sawtooth Activity in Ohmically Heated HT-7 Plasma

    Institute of Scientific and Technical Information of China (English)

    胡立群; 石跃江; 刘胜侠

    2001-01-01

    Experimental properties of monster sawtooth activities in ohmic HT-7 plasma are presented in this paper. The monster sawtooth activities belong to global fluctuations and are characterized with a series of large core collapses on SXR intensity traces with a long period, a large amplitude fluctuation and a large inversion radius. However, they emerge without apparent deterioration of plasma confinement and without major plasma disruption. During the events,long partial sawtooth collapses and abundant MHD phenomena are also observed.

  16. Compound sawtooth study in ohmically heated TFTR plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, H.; McGuire, K.; Colchin, D.; Efthimion, P.C.; Fredrickson, E.; Hill, K.; Kiraly, J.; Pare, V.; Taylor, G.; Sauthoff, N.

    1985-09-01

    Compound sawtooth activity has been observed in ohmically heated, high current, high density TFTR plasmas. Commonly called ''double sawteeth,'' such sequences consist of a repetitive series of subordinate relaxations followed by a main relaxation with a different inversion radius. The period of such compound sawteeth can be as long as 100 msec. In other cases, however, no compound sawteeth or bursts of them can be observed in discharges with essentially the same parameters.

  17. Observation of improved ohmic confinement in highly elongated TCV discharges

    Energy Technology Data Exchange (ETDEWEB)

    Nieswand, C.; Hofmann, F.; Behn, R.; Furno, I.; Moret, J.M.; Pietrzyk, Z.A.; Pochelon, A.; Reimerdes, H.; Weisen, H. [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)

    1997-06-01

    The primary goals of the TCV tokamak are to produce plasmas with high elongation and to investigate confinement behaviour for a variety of plasma shapes. A spontaneous transition to an improved ohmic confinement regime has recently been observed in moderately and highly elongated discharges limited by the central column. The observed features are similar to those observed in ASDEX (IOC regime). (author) 5 tab., 5 refs.

  18. Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Liao, Chung-Chi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw; Chang, Yuan-Ching; Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China); Chen, Nai-Chuan [Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan (China)

    2014-03-21

    This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

  19. An explicit scheme for ohmic dissipation with smoothed particle magneto-hydrodynamics

    CERN Document Server

    Tsukamoto, Yusuke; Inutsuka, Shu-ichiro

    2013-01-01

    In this paper, we present an explicit scheme for Ohmic dissipation with smoothed particle magneto-hydrodynamics (SPMHD). We propose a SPH discretization of Ohmic dissipation and solve Ohmic dissipation part of induction equation with the supertime-stepping method (STS) which allows us to take a longer time-step than Courant-Friedrich-Levy stability condition. Our scheme is second-order accurate in space and first-order accurate in time. Our numerical experiments show that optimal choice of the parameters of STS for Ohmic dissipation of SPMHD is {\

  20. Development in p-type Doping of ZnO

    Institute of Scientific and Technical Information of China (English)

    YU Liping; ZHU Qiqiang; FAN Dayong; LAN Zili

    2012-01-01

    Zinc oxide (ZnO) is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications,such as the flat panel displays and solar cells used in sports tournament.Despite its advantages,the application of ZnO is hampered by the lack of stable p-type doping.In this paper,the recent progress in this field was briefly reviewed,and a comprehensive summary of the research was carried out on ZnO fabrication methods and its electrical,optical,and magnetic properties were presented.

  1. P-type conductivity in annealed strontium titanate

    Energy Technology Data Exchange (ETDEWEB)

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D., E-mail: mattmcc@wsu.edu [Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2814 (United States)

    2015-12-15

    Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO{sub 3}, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm{sup 2}/V s were measured, an order of magnitude higher than those for electrons (5-10 cm{sup 2}/V s). Average hole densities were in the 10{sup 9}-10{sup 10} cm{sup −3} range, consistent with a deep acceptor.

  2. Bi-Se doped with Cu, p-type semiconductor

    Science.gov (United States)

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  3. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Sinha, Nidhi [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi 110007 (India); Ray, Geeta; Godara, Sanjay; Gupta, Manoj K. [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Kumar, Binay, E-mail: bkumar@physics.du.ac.in [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2014-11-15

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm{sup 2}) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications.

  4. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Gershon, Talia S.; Gunawan, Oki; Haight, Richard A.; Lee, Yun Seog

    2017-03-28

    A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

  5. Metal Fluoride Inhibition of a P-type H+ Pump

    Science.gov (United States)

    Pedersen, Jesper Torbøl; Falhof, Janus; Ekberg, Kira; Buch-Pedersen, Morten Jeppe; Palmgren, Michael

    2015-01-01

    The plasma membrane H+-ATPase is a P-type ATPase responsible for establishing electrochemical gradients across the plasma membrane in fungi and plants. This essential proton pump exists in two activity states: an autoinhibited basal state with a low turnover rate and a low H+/ATP coupling ratio and an activated state in which ATP hydrolysis is tightly coupled to proton transport. Here we characterize metal fluorides as inhibitors of the fungal enzyme in both states. In contrast to findings for other P-type ATPases, inhibition of the plasma membrane H+-ATPase by metal fluorides was partly reversible, and the stability of the inhibition varied with the activation state. Thus, the stability of the ATPase inhibitor complex decreased significantly when the pump transitioned from the activated to the basal state, particularly when using beryllium fluoride, which mimics the bound phosphate in the E2P conformational state. Taken together, our results indicate that the phosphate bond of the phosphoenzyme intermediate of H+-ATPases is labile in the basal state, which may provide an explanation for the low H+/ATP coupling ratio of these pumps in the basal state. PMID:26134563

  6. Annealing effects on electrical behavior of gold nanoparticle film: Conversion of ohmic to non-ohmic conductivity

    Science.gov (United States)

    Ebrahimpour, Zeinab; Mansour, Nastaran

    2017-02-01

    This paper reports on the electrical behavior of self-assembled gold nanoparticle films before and after high-temperature annealing in ambient environment. These films are made by depositing gold nanoparticles from a colloidal solution on glass substrates using centrifuge deposition technique. The current-voltage (I-V) characteristics of these films exhibits ohmic and non-ohmic properties for un-annealed and annealed films respectively. As the annealing time duration increases, the onset of non-ohmic behavior occurs at higher voltages. To understand the underlying mechanisms for the observed electrical conduction behavior in these films and how electrical conduction is effected by film morphology and structural properties before and after annealing, systematic comparative studies based on scanning electron microscopy (SEM), UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) have been performed. The morphology of the films shows that the assembled gold nanoparticles are distributed on the substrate in a random way before annealing. After 2 h annealing gold nanoparticles exhibit a higher filling fraction when examined by SEM, which means that they coalesce, upon annealing, with respect to un-annealed films. The UV-vis absorption spectra of the films show that there is a red-shift and broadening in the absorption band for the annealed films. The observed phenomenon is related to the plasmon near-field coupling effect and suggests that the nanoparticle ensembles interspacing has decreased. The structural and crystallinity of the films exhibit amorphous structure before annealing and pure crystalline phases with a preferential growth direction along the (111) plane after annealing. The XPS analysis further suggests the existence of the stable thin oxide layer in the phase of Au2O3 in the annealed films. The I-V characteristics have been described by Simmons' model for tunnel transport through metal-insulator-metal (MIM) junctions. The Fowler

  7. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W. [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul [National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-11-28

    Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  8. Transport and turbulence in TORE SUPRA ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Garbet, X.; Payan, J.; Laviron, C. (Association Euratom-CEA, Centre d' Etudes Nucleaires de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee) (and others)

    1992-01-01

    The mechanisms underlying the energy confinement behaviour in ohmic tokamak discharges are not yet understood. It is well known that the confinement time increases with the average density and saturates above a critical value of the density, but several explanations exist for this saturation: the onset of ionic turbulence, an impurity content effect on Drift Trapped Electron Modes, or [eta][sub e] modes stabilization by the increase of [beta]. The present study is an analysis of a set of ohmic discharges in TORE SUPRA with I[sub p]=1.6 MA, B=4T, R=2.35 m and a=0.78 m, where the average density was increased from 0.9 to 4.2 10[sup 19] m[sup -3]. For these plasma parameters, the energy confinement time given by magnetic measurements saturates for [>=] 2.5 10[sup 19] m[sup -3]. It is emphasized here that the onset of ionic turbulence is unlikely in TORE SUPRA. This conclusion relies on transport analysis and turbulence measurements by CO[sub 2] laser scattering, whose results are presented in this paper. (author) 6 refs., 3 figs.

  9. Neutron irradiation effects on metal-gallium nitride contacts

    Energy Technology Data Exchange (ETDEWEB)

    Katz, Evan J.; Lin, Chung-Han; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J., E-mail: brillson.1@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-03-28

    We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15} n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15} n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16} n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

  10. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications

    Science.gov (United States)

    Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I.; Chang, Edward Yi

    2016-07-01

    In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WN x Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WN X Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

  11. Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

    Science.gov (United States)

    K. C., Santosh; Longo, Roberto C.; Addou, Rafik; Wallace, Robert M.; Cho, Kyeongjae

    2016-01-01

    In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations. PMID:27666523

  12. p-Type NiO Hybrid Visible Photodetector.

    Science.gov (United States)

    Mallows, John; Planells, Miquel; Thakare, Vishal; Bhosale, Reshma; Ogale, Satishchandra; Robertson, Neil

    2015-12-23

    A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated π systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the organic layer was also optimized for the device, giving a responsivity of 1.54 × 10(-2) A W(-1) in 460 nm light.

  13. Elucidating Functional Aspects of P-type ATPases

    DEFF Research Database (Denmark)

    Autzen, Henriette Elisabeth

    2015-01-01

    similar to that of the wild type (WT) protein. The discrepancy between the newly determined crystal structure of LpCopA and the functional manifestations of the missense mutation in human CopA, could indicate that LpCopA is insufficient in structurally elucidating the effect of disease-causing mutations...... cancer and pathogenic microbes. The goal of this Ph.D. dissertation was to functionally characterize SERCA1a and CopA from Legionella pneumophila (LpCopA) through a range of different methods within structural biology. Crystallographic studies of SERCA1a led to a newly determined crystal structure......P-type ATPases are proteins that act to maintain ion homeostasis and electrochemical gradients through the translocation of cations across cell membranes. Underscoring their significance in humans, dysfunction of the ATPases can lead to crucial diseases. Dysfunction of the sarco...

  14. Study on the p-type QWIP-LED device

    Institute of Scientific and Technical Information of China (English)

    ZHEN; Honglou; XIONG; Dayuan; ZHOU; Xuchang; LI; Ning; SHAO; Jun; LU; Wei

    2006-01-01

    A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared photo-emission intensity variation. A good agreement between these two spectra was observed, which demonstrates that the long-wavelength infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process in the QWIP-LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for the new infrared focal plane array technology.

  15. P-type InGaAsP coolers for integrated optic devices

    Science.gov (United States)

    Vashaee, Daryoosh; LaBounty, Christopher J.; Fang, Xiaofeng; Zeng, Gehong; Abraham, Patrick; Bowers, John E.; Shakouri, Ali

    2001-05-01

    Single stage thin film coolers based on thermoelectric and thermionic cooling in p-type InGaAsP superlattice structures have been fabricated. Devices with different sizes and at various ambient temperatures have been characterized. Experimental results showed 0.5 degree centigrade cooling below the ambient temperature at 25C. This cooling over 1 4mu2m thick superlattice barrier corresponds to cooling power densities on the order of 200 W/cm2. The device cools by a factor of two better at higher temperatures (70C). This is due to the reduction of the superlattice thermal conductivity and the broadening of the electronic distribution function at higher temperatures. 150x150 micrometers 2 devices provide largest cooling at room temperature while the optimum device size shrinks as the temperature increases. Simulations results that take into account finite thermal resistance of the InP substrate, the effect of the contact resistance, heat generation in the wire-bonds and metallic pads on top of the device predict accurately the optimum cooling of these micro refrigerators. By eliminating the major parasitic sources of heating (Joule heating in the substrate, heat conduction through the side contact and reducing the contact resistance to 5x7-7 ohm-cm2) simulations show that, ultimately, one can achieve 15 degree(s)C cooling (10's of kW/cm2 cooling power) with single stage p-InGaAsP thin film coolers.

  16. Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs

    Science.gov (United States)

    2014-03-27

    junction transistor CD critical dimension CVD chemical vapor deposition d.u. dimensionless unit DC direct current DI deionized water DRIE deep reactive...QuickLot process, the PR was exposed for 1.9 seconds on the MA6 mask aligner (10mW/cm2, λ = 365-405 nm), developed with 1:5 ratio of 351 and deionized water ...Platinum Si Silicon SiH4 Silane SiO2 Silicon dioxide Ta Tantalum Ti Titanium TiW Titanium tungsten alloy (10:90) W Tungsten ZnO Zinc oxide 76

  17. Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells

    Science.gov (United States)

    Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

    2015-01-01

    Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability. PMID:27877804

  18. Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells.

    Science.gov (United States)

    Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

    2015-06-01

    Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability.

  19. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  20. Bulk and Surface Event Identification in p-type Germanium Detectors

    CERN Document Server

    Yang, L T; Jia, L P; Jiang, H; Li, J; Lin, F K; Lin, S T; Liu, S K; Ma, J L; Sharma, V; Singh, L; Singh, M K; Soma, A K; Yang, S W; Wang, L; Wang, Q; Wong, H T; Yue, Q; Zhao, W

    2016-01-01

    The p-type point-contact germanium detectors, due to its sub-keV sensitivities and low internal radioactivity background, are demonstrated to be competitive tools for light dark matter WIMPs searches and may have potential applications in neutrino physics. These detectors exhibit anomalous surface behavior, which has been characterized and dealt with in previous analysis. However, the analysis method rely on spectral shape assumptions and must use external calibration sources. In this report, we purpose an improved method, where in situ data could be used as calibration sources. Data from CDEX-1 and TEXONO experiments will be re-examined and the results are shown to be consistent with both analysis.

  1. DLTS of p-type Czochralski Si wafers containing processing-induced macropores

    Science.gov (United States)

    Simoen, E.; Depauw, V.; Gordon, I.; Poortmans, J.

    2012-01-01

    The deep levels present in p-type Czochralski silicon with processing-induced macropores in the depletion region have been studied by the deep-level transient (DLT) spectroscopy technique. It is shown that a broad band is present for a bias pulse close to the interface with the Al Schottky contact, which exhibits anomalously slow hole capture and is ascribed to the internal interface states of the macropores. For depths beyond the pore region, other deep levels, associated with point defects—possibly metal contamination during the high-temperature annealing step under H2 ambient--have been observed. The impact of the observed defects on the lifetime of thin-film solar cells, fabricated using macropore-based layer transfer is discussed. Finally, it is shown that the presence of pores in the depletion region, which also affects the DLT-spectrum, alters the capacitance-voltage characteristics.

  2. Recycling of p-type mc-si Top Cuts into p-type mono c-Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Bronsveld, P.C.P.; Manshanden, P.; Lenzmann, F.O. [ECN Solar Energy, Westerduinweg 3, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Gjerstad, O. [Si Pro Holding AS, Ornesveien 3, P.O. Box 37, 8161, Glomfjord (Norway); Oevrelid, E.J. [SINTEF, Alfred Getz Vei 2, 7465, Trondheim (Norway)

    2013-07-01

    Solar cell results and material analysis are presented of 2 p-type Czochralski (Cz) ingots pulled from a charge consisting of 100% and 50% recycled multicrystalline silicon top cuts. The top cuts were pre-cleaned with a dedicated low energy consuming technology. No structure loss was observed in the bodies of the ingots. The performance of solar cells made from the 100% recycled Si ingot decreases towards the seed end of the ingot, which could be related to a non-optimal pulling process. Solar cells from the tail end of this ingot and from the 50% recycled Si ingot demonstrated an average solar cell efficiency of 18.6%. This is only 0.1% absolute lower than the efficiency of higher resistivity reference solar cells from commercially available wafers that were co-processed.

  3. Protein removal from fish mince washwater using ohmic heating

    Directory of Open Access Journals (Sweden)

    Kobsak Kanjanapongkul

    2008-05-01

    Full Text Available A static ohmic heating system was developed to remove protein from fish mince (threadfin bream washwatercollected from a surimi production plant in order to improve water quality. The samples were heated under different electricfield strengths (EFS, 20, 25, and 30 V/cm until reaching the desired temperature (50, 60, and 70oC, and further held at thattemperature for a certain time (0, 15, and 30 minutes. Heating the samples to 70oC resulted in a better protein removal whencompared to 50 and 60oC. After heating to 70oC, the samples were centrifuged. The analysis of the supernatant obtained showsthe reduction of protein, COD, BOD, TS, and TDS to 42%, 25%, 23%, 44%, and 61%, respectively. The electrical conductivityof the samples showed a linear relationship with temperature and the temperature demonstrated a parabolic relationshipwith heating time. EFS and holding time have no significant effect on protein removal.

  4. Effect of Boronization on Ohmic Plasmas in NSTX

    Energy Technology Data Exchange (ETDEWEB)

    Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

    2001-03-27

    Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas.

  5. Contact engineering in organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Chuan Liu

    2015-03-01

    Full Text Available Organic field-effect transistors (OFETs are promising for numerous potential applications but suffer from poor charge injection, such that their performance is severely limited. Recent efforts in lowering contact resistance have led to significantly improved field-effect mobility of OFETs, up to 100 times higher, as the results of careful choice of contact materials and/or chemical treatment of contact electrodes. Here we review the innovative developments of contact engineering and focus on the mechanisms behind them. Further improvement toward Ohmic contact can be expected along with the rapid advance in material research, which will also benefit other organic and electronic devices.

  6. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  7. Infrared Transparent Spinel Films with p -Type Conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, Charles F.; Exarhos, Gregory J.; Ferris, Kim F.; Engelhard, Mark H.; Stewart, Donald C.

    2001-11-29

    Spinel oxide films containing at least two transition metal cations were found to exhibit p-type conductivity with high optical transparency from the visible to wavelengths near 15 micrometers. Resistivities as low as 0.003 ohm-cm were measured on 100 nm thick rf sputter deposited films that contained nickel and cobalt. Optical spectra, Raman scattering and XPS measurements indicated the valency of nickel localized on octahedral sites within the spinel lattice determines these properties. Electronic band structure calculations corroborated the experimental results. A resistivity minimum was found at the composition NiCo2O4 deposited from aqueous or alcoholic solutions followed by subsequent annealing at 400 degrees C in air. Solution deposited films richer in nickel than this stoichiometry always were found to phase separate into nickel oxide and a spinel phase with concomitant loss in conductivity. However, the phase stability region could be extended to higher nickel contents when rf-sputter deposition techniques were used. Sputter deposited spinel films having a nickel to cobalt ratio less than 2 were found to exhibit the highest conductivity. Results suggest that the phase stability region for these materials can be extended through appropriate choice of deposition conditions. A possible mechanism that promotes high conductivity in this system is thought to be charge transfer between the resident di- and trivalent cations that may be assisted by the magnetic nature of the oxide film.

  8. Electronic processes in uniaxially stressed p-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  9. P type porous silicon resistivity and carrier transport

    Energy Technology Data Exchange (ETDEWEB)

    Ménard, S., E-mail: samuel.menard@st.com [STMicroelectronics, 10, rue Thalès de Milet, 37071 Tours Cedex 2 (France); Fèvre, A. [STMicroelectronics, 10, rue Thalès de Milet, 37071 Tours Cedex 2 (France); Université François Rabelais de Tours, CNRS, CEA, INSA CVL, GREMAN UMR 7347, Tours (France); Billoué, J.; Gautier, G. [Université François Rabelais de Tours, CNRS, CEA, INSA CVL, GREMAN UMR 7347, Tours (France)

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  10. Photoconduction spectroscopy of p-type GaSb films

    Energy Technology Data Exchange (ETDEWEB)

    Shura, M.W., E-mail: Megersa.Shura@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

  11. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

    Science.gov (United States)

    Gee, James M; Schmit, Russell R.

    2007-01-30

    Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

  12. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  13. Contact dermatitis

    Science.gov (United States)

    Dermatitis - contact; Allergic dermatitis; Dermatitis - allergic; Irritant contact dermatitis; Skin rash - contact dermatitis ... There are 2 types of contact dermatitis. Irritant dermatitis: This ... with acids, alkaline materials such as soaps and detergents , ...

  14. Model-based statistical estimation of Sandia RF ohmic switch dynamic operation form stroboscopic, x-ray imaging.

    Energy Technology Data Exchange (ETDEWEB)

    Diegert, Carl F.

    2006-12-01

    We define a new diagnostic method where computationally-intensive numerical solutions are used as an integral part of making difficult, non-contact, nanometer-scale measurements. The limited scope of this report comprises most of a due diligence investigation into implementing the new diagnostic for measuring dynamic operation of Sandia's RF Ohmic Switch. Our results are all positive, providing insight into how this switch deforms during normal operation. Future work should contribute important measurements on a variety of operating MEMS devices, with insights that are complimentary to those from measurements made using interferometry and laser Doppler methods. More generally, the work opens up a broad front of possibility where exploiting massive high-performance computers enable new measurements.

  15. Influence of Ohmic Heating on Advection-Dominated Accretion Flows

    CERN Document Server

    Bisnovatyi-Kogan, G S

    1997-01-01

    Advection-dominated, high-temperature, quasi-spherical accretion flow onto a compact object of mass M, recently considered by a number of authors, assume that the dissipation of turbulent energy of the flow heats the ions and that a constant fraction f of the dissipated energy is advected inward. It is suggested that the efficiency of conversion of accretion energy to radiation can be very much smaller than unity. However, it is likely that the flows have an equipartition magnetic field with the result that dissipation of magnetic energy at a rate comparable to that for the turbulence must occur by Ohmic heating. We argue that this heating occurs as a result of plasma instabilities and that the relevant instabilities are current driven in response to the strong electric fields parallel to the magnetic field. We argue further that these instabilities heat predominantly the electrons. We analyze a model for the radial dependence of the ion and electron temperatures of a general, possibly quasi-spherical accreti...

  16. Turbulence and energy confinement in TORE SUPRA ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L. [Association Euratom-CEA, Centre d`Etudes de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Truc, A.; Hennequin, P.; Gervais, F.; Quemeneur, A. [Ecole Polytechnique, 91 - Palaiseau (France)

    1992-06-01

    Results on confinement and turbulence from a set of ohmic discharges in Tore Supra are discussed. The attention is focused on the saturation of the energy confinement time and it is emphasized that this saturation could be explained by a saturation of the electron heat diffusivity. Ion behaviour is indeed governed by dilution and equipartition effects. Although the ion heat transport is never neoclassical, there is no enhanced degradation at the saturation. This behaviour is confirmed by turbulence measurements given by CO{sub 2} laser coherent scattering. The density fluctuations level follows the electron heat diffusivity variations with the average density. Waves propagating in the ion diamagnetic direction are always present in turbulence frequency spectra. Thus, the saturation cannot be explained by the onset of an ion turbulence. The existence of an ion turbulence at the edge at all densities cannot be excluded. However, this ion feature in scattering spectra could be explained by a Doppler shift associated to an inversion point of the radial electric field at the edge.

  17. Turbulence, Transport and Waves in Ohmic Dead Zones

    CERN Document Server

    Gole, Daniel; Lubow, Stephen H; Armitage, Philip J

    2016-01-01

    We use local numerical simulations to study a vertically stratified accretion disk with a resistive mid-plane that damps magnetohydrodynamic (MHD) turbulence. This is an idealized model for the dead zones that may be present at some radii in protoplanetary and dwarf novae disks. We vary the relative thickness of the dead and active zones to quantify how forced fluid motions in the dead zone change. We find that the residual Reynolds stress near the mid-plane decreases with increasing dead zone thickness, becoming negligible in cases where the active to dead mass ratio is less than a few percent. This implies that purely Ohmic dead zones would be vulnerable to episodic accretion outbursts via the mechanism of Martin & Lubow (2011). We show that even thick dead zones support a large amount of kinetic energy, but this energy is largely in fluid motions that are inefficient at angular momentum transport. Confirming results from Oishi & Mac Low (2009), the perturbed velocity field in the dead zone is domin...

  18. Sawtooth Activity in Ohmically Heated Plasma on HT-7 Tokamak

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Sawtooth activity on HT-7 tokamak has been investigated experimentally mainly by using soft x-ray diode array and magnetic probes. Their behaviors and occurrences are correlatedclosely to the discharge conditions: the electron density Ne, the electron temperature Te, the safetyfactor qa on plasma boundary and wall condition etc. When central line-averaged electron densityNe(0) is over 2.0×1013cm-3, major sawtooth activity emerges with a period of up to 6.5 ms and afluctuation amplitude of up to 2~30 % of SXR radiation signal. In some cases such as the safetyfactor between 4.2~4.7 and Zeff=3.0~6.0, a monster sawtooth activity often emerges withoutapparent deterioration of plasma confinement and without major disruption. During these events,abundant MHD phenomena are observed including partial sawtooth oscillations. In this paper, theobserved sawtooth behaviors and their dependence on the and their dependence density Ne andwall condition in ohmically heated plasma are introduced, the results are discussed and presented.

  19. The Influence of Atmospheric Scattering and Absorption on Ohmic Dissipation in Hot Jupiters

    CERN Document Server

    Heng, Kevin

    2012-01-01

    Using semi-analytical, one-dimensional models, we elucidate the influence of scattering and absorption on the degree of Ohmic dissipation in hot Jovian atmospheres. With the assumption of Saha equilibrium, the variation in temperature is the main driver of the variations in the electrical conductivity, induced current and Ohmic power dissipated. Atmospheres possessing temperature inversions tend to dissipate most of the Ohmic power superficially, at high altitudes, whereas those without temperature inversions are capable of greater dissipation deeper down. Scattering in the optical range of wavelengths tends to cool the lower atmosphere, thus reducing the degree of dissipation at depth. Purely absorbing cloud decks (in the infrared), of a finite extent in height, allow for localized reductions in dissipation and may reverse a temperature inversion if they are dense and thick enough, thus greatly enhancing the dissipation at depth. If Ohmic dissipation is the mechanism for inflating hot Jupiters, then variatio...

  20. Optimization of ohmic heating applications for pectin methylesterase inactivation in orange juice

    National Research Council Canada - National Science Library

    Demirdöven, Aslıhan; Baysal, Taner

    Ohmic heating (OH) which is among to electro-thermal methods and helps to inactivate microorganisms and enzymes was used in this study as thermal treatment on orange juice production for pectin methylesterase (PME) inactivation...

  1. A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

    Science.gov (United States)

    Basu, A.; Adams, G. G.; McGruer, N. E.

    2016-10-01

    Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs.

  2. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, Sunetra L.; Latthe, Sanjay S. [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India); Kappenstein, Charles [University of Poitiers, Laboratory of Catalysis in Organic Chemistry, LA CCO, UMR CNRS 6503, Poitiers-86000 (France); Mukherjee, S.K. [Fuel Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400085, Maharashtra India (India); Rao, A. Venkateswara, E-mail: avrao2012@gmail.com [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India)

    2010-04-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 A. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle {approx}156{sup o}) while that on glass it is hydrophilic (contact angle {approx}88{sup o}). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  3. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    Science.gov (United States)

    Dhere, Sunetra L.; Latthe, Sanjay S.; Kappenstein, Charles; Mukherjee, S. K.; Rao, A. Venkateswara

    2010-04-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 Å. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle ˜156°) while that on glass it is hydrophilic (contact angle ˜88°). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  4. Electrical test methods for on-line fuel cell ohmic resistance measurement

    Science.gov (United States)

    Cooper, K. R.; Smith, M.

    The principles and trade-offs of four electrical test methods suitable for on-line measurement of the ohmic resistance (R Ω) of fuel cells is presented: current interrupt, AC resistance, high frequency resistance (HFR), and electrochemical impedance spectroscopy (EIS). The internal resistance of a proton exchange membrane (PEM) fuel cell determined with the current interrupt, HFR and EIS techniques is compared. The influence of the AC amplitude and frequency of the HFR measurement on the observed ohmic resistance is examined, as is the ohmic resistance extracted from the EIS data by modeling the spectra with a transmission line model for porous electrodes. The ohmic resistance of a H 2/O 2 PEM fuel cell determined via the three methods was within 10-30% of each other. The current interrupt technique consistently produced measured cell resistances that exceeded those of the other two techniques. For the HFR technique, the frequency at which the measurement was conducted influenced the measured resistance (i.e., higher frequency providing smaller R Ω), whereas the AC amplitude did not effect the observed value. The difference in measured ohmic resistance between these techniques exceeds that reasonably accounted for by measurement error. The source of the discrepancy between current interrupt and impedance-based methods is attributed to the difference in the response of a non-uniformly polarized electrode, such as a porous electrode with non-negligible ohmic resistance, to a large perturbation (current interrupt event) as compared to a small perturbation (impedance measurement).

  5. Ohmic heating as a pre-treatment in solvent extraction of rice bran.

    Science.gov (United States)

    Nair, Gopu Raveendran; Divya, V R; Prasannan, Liji; Habeeba, V; Prince, M V; Raghavan, G S V

    2014-10-01

    Rice bran, which is one of the major by products of paddy contain high quality proteins and edible oil apart from fibre, ash and NFE (nitrogen free extract). The existing solvent extraction method employs n-hexane as the most viable solvent for the extraction of oil from rice bran. But the high cost and scarce availability of n-hexane resulted in uneconomical extraction of rice bran oil. In this study, rice bran was ohmically heated for different time periods(1, 2 and 3 min) with different current values (5, 15 and 20 A) and with different concentration of sodium chloride (1 M, 0.1 M and 0.01 M) as conducting medium. The ohmically heated rice bran was subjected to extraction studies. Ohmic heating of rice bran of paddy varieties Red Triveni and Basmati reduced the extraction time by nearly 75 % and 70 % respectively and gave a maximum quantity of oil extracted when compared to bran, which was not ohmically heated. From the experiments with varying concentrations, residence time of ohmic heating and currents, it was found that ohmically heating the rice bran with 1 M sodium chloride solution and with a current value of 20 A for 3 min gave maximum oil extraction with minimum extraction time.

  6. Language Contact.

    Science.gov (United States)

    Nelde, Peter Hans

    1995-01-01

    Examines the phenomenon of language contact and recent trends in linguistic contact research, which focuses on language use, language users, and language spheres. Also discusses the role of linguistic and cultural conflicts in language contact situations. (13 references) (MDM)

  7. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    Science.gov (United States)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  8. Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal

    Science.gov (United States)

    Hsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L.

    2015-09-01

    In this study, we developed an Ohmic contact structure to an in situ n+-Ge film that has an ultralow specific contact resistivity of [(6.8 ±2.1 ) ×10-8 Ωṡcm2] . This structure was developed by introducing a PtGe alloy as the contact metal. We observed that Ohmic contact behavior can be achieved with several other metals, and the contact resistance is related to the work function of the metal. A physical model of the band diagram was created for the Schottky tunneling width, which can provide insight into the validation and explanation of work function-dependent specific contact resistivity. Dopant segregation at the interface and increased interface roughness induced by the formation of the alloy are crucial in further reducing the specific contact resistivity. As a result, a stable PtGe alloy and high doping concentration in Ge are critical in pursuing a lower contact resistance for a Ge n-channel device.

  9. Energy and angular anisotropy optimisation of a p-type diode for in vivo dosimetry in photon-beam radiotherapy.

    Science.gov (United States)

    Greene, Simon; Price, Robert A

    2005-01-01

    We present simulation work using the Monte Carlo code MCNPX that shows that there is a possibility of improving the silicon p-type diode as a radiation dosemeter, by altering the construction of the diode. Altering the diode die thickness can reduce the inherent angular anisotropy of the diode, with little effect on its energy response. Conversely, the contact material and geometry have a large impact on the energy response with little effect on the inherent angular anisotropy. By correct choice of contact material, the typical over-response -100 keV relative to the response at 60Co energy can be reduced from approximately 20 to 4. It is expected that further enhancements may be made with different geometries and materials.

  10. Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

    Science.gov (United States)

    Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

    2017-07-01

    Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

  11. Nutritional impact of ohmic heating on fruits and vegetables—A review

    Directory of Open Access Journals (Sweden)

    Ranvir Kaur

    2016-12-01

    Full Text Available Ohmic heating, also called electrical resistance heating, joule heating, or electro-conductive heating, is an advanced thermal food processing technique where heat is internally generated in a sample due to electrical resistance when electric current is passed through it. It is a novel technique which provides rapid and uniform heating, resulting in less thermal damage to the food product. According to the recent literature, plant products are most suitable and often used for ohmic heat processing. Beyond heating of fruits and vegetables, the applied electric field under ohmic heating causes various changes in quality and nutritional parameters which include inactivation of enzymes and micro-organisms, degradation of heat-sensitive compounds, changes in cell membranes, viscosity, pH, color, and rheology. Ohmic heating rate depends on the electrical field strength and electrical conductivity of product. This review focuses on various factors affecting the electrical conductivity of fruits and vegetables and the effect of ohmic heating on their quality and nutritional properties.

  12. Comparative effects of ohmic, induction cooker, and electric stove heating on soymilk trypsin inhibitor inactivation.

    Science.gov (United States)

    Lu, Lu; Zhao, Luping; Zhang, Caimeng; Kong, Xiangzhen; Hua, Yufei; Chen, Yeming

    2015-03-01

    During thermal treatment of soymilk, a rapid incorporation of Kunitz trypsin inhibitor (KTI) into protein aggregates by covalent (disulfide bond, SS) and/or noncovalent interactions with other proteins is responsible for its fast inactivation of trypsin inhibitor activity (TIA). In contrast, the slow cleavage of a single Bowman-Birk inhibitor (BBI) peptide bond is responsible for its slow inactivation of TIA and chymotrypsin inhibitor activity (CIA). In this study, the effects of Ohmic heating (220 V, 50 Hz) on soymilk TIA and CIA inactivation were examined and compared to induction cooker and electric stove heating with similar thermal histories. It was found that: (1) TIA and CIA inactivation was slower from 0 to 3 min, and faster after 3 min as compared to induction cooker and electric stove. (2) The thiol (SH) loss rate was slower from 0 to 3 min, and similar to induction cooker and electric stove after 3 min. (3) Ohmic heating slightly increased protein aggregate formation. (4) In addition to the cleavage of one BBI peptide bond, an additional reaction might occur to enhance BBI inactivation. (5) Ohmic heating was more energy-efficient for TIA and CIA inactivation. (6) TIA and CIA inactivation was accelerated with increasing electric voltage (110, 165, and 220 V) of Ohmic heating. It is likely that the enhanced inactivation of TIA by Ohmic heating is due to its combined electrochemical and thermal effects.

  13. Effect of ohmic heating processing conditions on color stability of fungal pigments.

    Science.gov (United States)

    Aguilar-Machado, Diederich; Morales-Oyervides, Lourdes; Contreras-Esquivel, Juan C; Aguilar, Cristóbal; Méndez-Zavala, Alejandro; Raso, Javier; Montañez, Julio

    2017-01-01

    The aim of this work was to analyze the effect of ohmic heating processing conditions on the color stability of a red pigment extract produced by Penicillium purpurogenum GH2 suspended in a buffer solution (pH 6) and in a beverage model system (pH 4). Color stability of pigmented extract was evaluated in the range of 60-90 ℃. The degradation pattern of pigments was well described by the first-order (fractional conversion) and Bigelow model. Degradation rate constants ranged between 0.009 and 0.088 min(-1) in systems evaluated. Significant differences in the rate constant values of the ohmic heating-treated samples in comparison with conventional thermal treatment suggested a possible effect of the oscillating electric field generated during ohmic heating. The thermodynamic analysis also indicated differences in the color degradation mechanism during ohmic heating specifically when the pigment was suspended in the beverage model system. In general, red pigments produced by P. purpurogenum GH2 presented good thermal stability under the range of the evaluated experimental conditions, showing potential future applications in pasteurized food matrices using ohmic heating treatment.

  14. Variability of electrical contact properties in multilayer MoS2 thin-film transistors

    Science.gov (United States)

    Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

    2014-09-01

    We report the variability of electrical properties of Ti contacts in back-gated multilayer MoS2 thin-film transistors based on mechanically exfoliated flakes. By measuring current-voltage characteristics from room temperature to 240 °C, we demonstrate the formation of both ohmic and Schottky contacts at the Ti-MoS2 junctions of MoS2 transistors fabricated using identical electrode materials under the same conditions. While MoS2 transistors with ohmic contacts exhibit a typical signature of band transport, those with Schottky contacts indicate thermally activated transport behavior for the given temperature range. These results provide the experimental evidence of the variability of Ti metal contacts on MoS2, highlighting the importance of understanding the variability of electronic properties of naturally occurring MoS2 for further investigation.

  15. An investigation on the application of ohmic heating of cold water shrimp and brine mixtures

    DEFF Research Database (Denmark)

    Pedersen, Søren Juhl; Feyissa, Aberham Hailu; Brøkner Kavli, Sissel Therese

    2016-01-01

    Cooking is an important unit-operation in the production of cooked and peeled shrimps. The present study explores the feasibility of using ohmic heating for cooking of shrimps. The focus is on investigating the effects of different process parameters on heating time and quality of ohmic cooked...... shrimps (Pandalus Borelias). The shrimps were heated to a core temperature of 72 °C in a brine solution using a small batch ohmic heater. Three experiments were performed: 1) a comparative analyses of the temperature development between different sizes of shrimps and thickness (head and tail region...... of the shrimp) over varying salt concentrations (10 kg m−3 to 20 kg m−3) and electric field strengths (1150 V m−1 to 1725 V m−1) with the heating time as the response; 2) a 2 level factorial experiment for screening the impact of processing conditions using electric field strengths of 1250 V m−1 and 1580 V m−1...

  16. Thanatology in Protoplanetary Discs: the combined influence of Ohmic, Hall, and ambipolar diffusion on dead zones

    CERN Document Server

    Lesur, Geoffroy; Fromang, Sebastien

    2014-01-01

    Protoplanetary discs are poorly ionised due to their low temperatures and high column densities, and are therefore subject to three "non-ideal" magnetohydrodynamic effects: Ohmic dissipation, ambipolar diffusion, and the Hall effect. The existence of magnetically driven turbulence in these discs has been a central question since the discovery of the magnetorotational instability. Early models considered Ohmic diffusion only and led to a scenario of layered accretion, in which a magnetically "dead" zone in the disc midplane is embedded within magnetically "active" surface layers at distances ~1-10 au from the central protostellar object. Recent work has suggested that a combination of Ohmic dissipation and ambipolar diffusion can render both the midplane and surface layers of the disc inactive and that torques due to magnetically driven outflows are required to explain the observed accretion rates. We reassess this picture by performing three-dimensional numerical simulations that include, for the first time, ...

  17. Equilibrium and Nonequilibrium Dynamics of the Sub-Ohmic Spin-Boson Model

    Science.gov (United States)

    Anders, Frithjof B.; Bulla, Ralf; Vojta, Matthias

    2007-05-01

    Employing the nonperturbative numerical renormalization group method, we study the dynamics of the spin-boson model, which describes a two-level system coupled to a bosonic bath with a spectral density J(ω)∝ωs. We show that, in contrast with the case of Ohmic damping, the delocalized phase of the sub-Ohmic model cannot be characterized by a single energy scale only, due to the presence of a nontrivial quantum phase transition. In the strongly sub-Ohmic regime, s≪1, weakly damped coherent oscillations on short time scales are possible even in the localized phase—this is of crucial relevance, e.g., for qubits subject to electromagnetic noise.

  18. Experimental Phenomena of Improved Ohmic Confinement Induced by Modulated Toroidal Current on the HT-7 Tokamak

    Institute of Scientific and Technical Information of China (English)

    毛剑珊; 罗家融; P.Phillips; 赵君煜; 揭银先; 吴振伟; 胡立群; 李建刚

    2002-01-01

    The phenomena of improved ohmic confinement have been observed during the modulation of the toroidal curranton the Hefei superconducting Tokamak-7 (HT-7). In the experiment, the programming ohmic heating field wasmodulated. A toroidal frequency-modulated current induced by modulated loop voltage was added on the plasmaequilibrium current. The ratio of ac amplitude of the plasma current to the main plasma current is about 12-30%.These improved plasma confinement phenomena include the facts that the average electron density and the centralelectron temperature both increase, the Dα radiation from the edge is reduced, the magnetohydrodynamics isobviously suppressed by oscillating plasma current, eand the global energy confinement time increases by 27-45%o.It is found that the faster the modulation is, the more effective the improved ohmic confinement phase.

  19. Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

    Science.gov (United States)

    Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

    2015-02-01

    To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease.

  20. Delayed charge recovery discrimination of passivated surface alpha events in P-type point-contact detectors

    CERN Document Server

    Gruszko, J; Arnquist, I J; Avignone, F T; Barabash, A S; Bertrand, F E; Bradley, A W; Brudanin, V; Busch, M; Buuck, M; Caldwell, T S; Chan, Y-D; Christofferson, C D; Chu, P H; Cuesta, C; Detwiler, J A; Dunagan, C; Efremenko, Yu; Ejiri, H; Elliott, S R; Fullmer, A; Galindo-Uribarri, A; Gilliss, T; Giovanetti, G K; Green, M P; Gruszko, J; Guinn, I S; Guiseppe, V E; Henning, R; Hoppe, E W; Howe, M A; Jasinski, B R; Keeter, K J; Kidd, M F; Konovalov, S I; Kouzes, R T; Leon, J; Lopez, A M; MacMullin, J; Martin, R D; Massarczyk, R; Meijer, S J; Mertens, S; Orrell, J L; O'Shaughnessy, C; Poon, A W P; Radford, D C; Rager, J; Rielage, K; Robertson, R G H; Romero-Romero, E; Shanks, B; Shirchenko, M; Suriano, A M; Tedeschi, D; Trimble, J E; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Wiseman, C; Xu, W; Yakushev, E; Yu, C H; Yumatov, V; Zhitnikov, I

    2016-01-01

    The Majorana Demonstrator searches for neutrinoless double-beta decay of $^{76}$Ge using arrays of high-purity germanium detectors. If observed, this process would demonstrate that lepton number is not a conserved quantity in nature, with implications for grand-unification and for explaining the predominance of matter over antimatter in the universe. A problematic background in such large granular detector arrays is posed by alpha particles. In the Majorana Demonstrator, events have been observed that are consistent with energy- degraded alphas originating on the passivated surface, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, charges drift through the bulk onto that surface, and then drift along it with greatly reduced mobility. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. In this c...

  1. Delayed charge recovery discrimination of passivated surface alpha events in P-type point-contact detectors

    Science.gov (United States)

    Gruszko, J.; Majorana Collaboration

    2017-09-01

    The Majorana Demonstrator searches for neutrinoless double-beta decay of 76Ge using arrays of high-purity germanium detectors. If observed, this process would demonstrate that lepton number is not a conserved quantity in nature, with implications for grand-unification and for explaining the predominance of matter over antimatter in the universe. A problematic background in such large granular detector arrays is posed by alpha particles. In the Majorana Demonstrator, events have been observed that are consistent with energy-degraded alphas originating on the passivated surface, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, charges drift through the bulk onto that surface, and then drift along it with greatly reduced mobility. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. In this contribution we discuss the characteristics of these events and the development of a filter that can identify the occurrence of this delayed charge recovery, allowing for the efficient rejection of passivated surface alpha events in analysis.

  2. A variational surface hopping algorithm for the sub-Ohmic spin-boson model

    CERN Document Server

    Yao, Yao

    2013-01-01

    The Davydov D1 ansatz, which assigns an individual bosonic trajectory to each spin state, is an efficient, yet extremely accurate trial state for time-dependent variation of the the sub-Ohmic spin-boson model [J. Chem. Phys. 138, 084111 (2013)]. A surface hopping algorithm is developed employing the Davydov D1 ansatz to study the spin dynamics with a sub-Ohmic bosonic bath. The algorithm takes into account both coherent and incoherent dynamics of the population evolution in a unified manner, and compared with semiclassical surface hopping algorithms, hopping rates calculated in this work follow more closely the Marcus formula.

  3. A novel mechanism of P-type ATPase autoinhibition involving both termini of the protein

    DEFF Research Database (Denmark)

    Ekberg, Kira; Palmgren, Michael; Veierskov, Bjarke;

    2010-01-01

    The activity of many P-type ATPases is found to be regulated by interacting proteins or autoinhibitory elements located in N- or C-terminal extensions. An extended C terminus of fungal and plant P-type plasma membrane H+-ATPases has long been recognized to be part of a regulatory apparatus...

  4. Demethoxycurcumin is a potent inhibitor of P-type ATPases from diverse kingdoms of life

    DEFF Research Database (Denmark)

    Dao, Trong Tuan; Sehgal, Pankaj; Thanh Tung, Truong;

    2016-01-01

    P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used ...

  5. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    Science.gov (United States)

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy.

  6. Application of neutron transmutation doping method to initially p-type silicon material.

    Science.gov (United States)

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  7. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  8. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  9. Modeling ohmic heating in the drying zone of the plasma shaft electric furnace, when recycling the technogenic waste

    Science.gov (United States)

    Aliferov, A. I.; Anshakov, A. S.; Sinitsyn, V. A.; Domarov, P. V.; Danilenko, A. A.

    2016-10-01

    Efficient use of ohmic heating in the drying zone of the plasma shaft furnace for gasification of organic and technogenic wastes is studied. It is shown that by using ohmic heating in the drying zone, energy release takes place in the filling along the entire zone.

  10. Modulation of Carbon Nanotube Metal Contacts in Gaseous Hydrogen Environment

    Directory of Open Access Journals (Sweden)

    A. R. Usgaocar

    2014-01-01

    Full Text Available Carbon nanotubes (CNTs, contacted by electrodeposited Pd0.59Ni0.41 alloys, are characterised using electrical measurements and Raman spectroscopy. The high workfunctions of Nickel and Palladium form an ohmic contact with the CNT valence band, but the contact properties change on Hydrogen exposure due to a reduction in the PdNi workfunction and the realignment of the PdNi Fermi level with the CNT band structure. A PdNi contacted semiconducting CNT exhibited significantly lower currents after Hydrogen exposure while a metallic CNT exhibited a small current increase. The semiconducting and metallic natures of the CNTs are confirmed by their Raman spectra. This study demonstrates a technique for modulating the PdNi-CNT contact and differentiating between semiconducting and metallic CNTs via contact modulation. It also provides experimental evidence of the theoretical allocation of features in the CNT Raman spectra.

  11. A new method for the compensation of ohmic drop in galvanic cells

    NARCIS (Netherlands)

    Kooijman, D.J.; Sluyters, J.H.

    1966-01-01

    Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

  12. Power requirement of the geodynamo from ohmic losses in numerical and laboratory dynamos.

    Science.gov (United States)

    Christensen, Ulrich R; Tilgner, Andreas

    2004-05-13

    In the Earth's fluid outer core, a dynamo process converts thermal and gravitational energy into magnetic energy. The power needed to sustain the geomagnetic field is set by the ohmic losses (dissipation due to electrical resistance). Recent estimates of ohmic losses cover a wide range, from 0.1 to 3.5 TW, or roughly 0.3-10% of the Earth's surface heat flow. The energy requirement of the dynamo puts constraints on the thermal budget and evolution of the core through Earth's history. Here we use a set of numerical dynamo models to derive scaling relations between the core's characteristic dissipation time and the core's magnetic and hydrodynamic Reynolds numbers--dimensionless numbers that measure the ratio of advective transport to magnetic and viscous diffusion, respectively. The ohmic dissipation of the Karlsruhe dynamo experiment supports a simple dependence on the magnetic Reynolds number alone, indicating that flow turbulence in the experiment and in the Earth's core has little influence on its characteristic dissipation time. We use these results to predict moderate ohmic dissipation in the range of 0.2-0.5 TW, which removes the need for strong radioactive heating in the core and allows the age of the solid inner core to exceed 2.5 billion years.

  13. Combined effect of ohmic heating and enzyme assisted aqueous extraction process on soy oil recovery.

    Science.gov (United States)

    Pare, Akash; Nema, Anurag; Singh, V K; Mandhyan, B L

    2014-08-01

    This research describes a new technological process for soybean oil extraction. The process deals with the combined effect of ohmic heating and enzyme assisted aqueous oil extraction process (EAEP) on enhancement of oil recovery from soybean seed. The experimental process consisted of following basic steps, namely, dehulling, wet grinding, enzymatic treatment, ohmic heating, aqueous extraction and centrifugation. The effect of ohmic heating parameters namely electric field strength (EFS), end point temperature (EPT) and holding time (HT) on aqueous oil extraction process were investigated. Three levels of electric field strength (i.e. OH600V, OH750V and OH900V), 3 levels of end point temperature (i.e. 70, 80 and 90 °C) and 3 levels of holding time (i.e. 0, 5 and 10 min.) were taken as independent variables using full factorial design. Percentage oil recovery from soybean by EAEP alone and EAEP coupled with ohmic heating were 53.12 % and 56.86 % to 73 % respectively. The maximum oil recovery (73 %) was obtained when the sample was heated and maintained at 90 °C using electric field strength of OH600V for a holding time of 10 min. The free fatty acid (FFA) of the extracted oil (i.e. in range of 0.97 to 1.29 %) was within the acceptable limit of 3 % (oleic acid) and 0.5-3 % prescribed respectively by PFA and BIS.

  14. Ohmic Heating and Viscous Dissipation Effects over a Vertical Plate in the Presence of Porous Medium

    Directory of Open Access Journals (Sweden)

    LOGANATHAN PARASURAM

    2016-01-01

    Full Text Available An analysis is performed to investigate the ohmic heating and viscous dissipation effects on an unsteady natural convective flow over an impulsively started vertical plate in the presence of porous medium with radiation and chemical reaction. Numerical solutions for the governing boundary layer equations are presented by finite difference scheme of the Crank Nicolson type. The influence of various parameters on the velocity, the temperature, the concentration, the skin friction, the Nusselt number and the Sherwood number are discussed. It is observed that velocity and temperature increases with increasing values of permeability and increasing values of Eckert number, whereas it decreases with increasing values of magnetic parameter. An increase in ohmic heating and viscous heating increases the velocity boundary layer. An increase in ohmic heating decreases the temperature. An increase in magnetic field reduces the temperature profile. The velocity profile is highly influenced by the increasing values of permeability. It is observed that permeability has strong effect on velocity. An enhancement in ohmic heating increases the shear stress, decreases the rate of heat transfer and induces the rate of mass transfer.

  15. A new method for the compensation of ohmic drop in galvanic cells

    NARCIS (Netherlands)

    Kooijman, D.J.; Sluyters, J.H.

    Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

  16. Thermal effect mechanism of magnetoresistance in p-type diamond films

    Institute of Scientific and Technical Information of China (English)

    Qin Guo-Ping; Kong Chun-Yang; Ruan Hai-Bo; Huang Gui-Juan; Cui Yu-Ting; Fang Liang

    2010-01-01

    Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.

  17. Characterization of plasma etching damage on p -type GaN using Schottky diodes

    OpenAIRE

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was ...

  18. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  19. Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm

    Energy Technology Data Exchange (ETDEWEB)

    Emelyanov, V. M., E-mail: resso2003@bk.ru; Mintairov, S. A.; Sorokina, S. V.; Khvostikov, V. P.; Shvarts, M. Z. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-01-15

    The method of mathematical simulation is used to examine the influence exerted by the characteristics of the epitaxial structure and contact grid of photovoltaic laser-power converters on their ohmic loss. The maximum attainable photoconverter efficiency at a Gaussian distribution of the laser-beam intensity on the surface of a photovoltaic converter and at dark-current densities of p–n junctions typical of structures grown by the metal-organic vapor-phase epitaxy (MOVPE) technique are determined. An approach to finding the optimal parameters of GaAs and In{sub 0.24}Ga{sub 0.76}As/GaAs photovoltaic converters in relation to the optical power being converted is suggested, and the structural parameters for incident-power values of 5, 20, and 50 W at wavelengths of 809 and 1064 nm are determined. It is found that, at laser-light intensities of up to 5 W, >60% efficiency can be achieved in laser-light conversion at a wavelength of 809 nm and >55% efficiency, at a wavelength of 1064 nm.

  20. Origin of the p-type character of AuCl3 functionalized carbon nanotubes

    KAUST Repository

    Murat, Altynbek

    2014-02-13

    The microscopic origin of the p-type character of AuCl3 functionalized carbon nanotubes (CNTs) is investigated using first-principles self-interaction corrected density functional theory (DFT). Recent DFT calculations suggest that the p-type character of AuCl3 functionalized CNTs is due to the Cl atoms adsorbed on the CNTs. We test this hypothesis and show that adsorbed Cl atoms only lead to a p-type character for very specific concentrations and arrangements of the Cl atoms, which furthermore are not the lowest energy configurations. We therefore investigate alternative mechanisms and conclude that the p-type character is due to the adsorption of AuCl4 molecules. The unraveling of the exact nature of the p-doping adsorbates is a key step for further development of AuCl3 functionalized CNTs in water sensor applications. © 2014 American Chemical Society.

  1. Theoretical prediction of p-type transparent conductivity in Zn-doped TiO2.

    Science.gov (United States)

    Han, Xiaoping; Shao, Guosheng

    2013-06-28

    It is very difficult and yet extremely important to fill the wide technological gap in developing transparent conducting oxides (TCOs) that exhibit excellent p-type conducting characteristics. Here, on the basis of extensive first-principles calculations, we discover for the first time potentially promising p-type transparent conductivity in Zn-doped TiO2 under oxygen rich conditions. Efforts have been made to elaborate the effects of possible defects and their interaction with Zn doping on the p-type transparent conductivity. This work offers a fundamental road map for cost-effective development of p-type TCOs based on TiO2, which is a cheap and stable material system of large natural resources.

  2. Origin and evolution of metal P-type ATPases in Plantae (Archaeplastida)

    OpenAIRE

    2014-01-01

    Metal ATPases are a subfamily of P-type ATPases involved in the transport of metal cations across biological membranes. They all share an architecture featuring eight transmembrane domains in pairs of two and are found in prokaryotes as well as in a variety of Eukaryotes. In Arabidopsis thaliana, eight metal P-type ATPases have been described, four being specific to copper transport and four displaying a broader metal specificity, including zinc, cadmium and possibly copper and calcium. So fa...

  3. Convergence of valence bands for high thermoelectric performance for p-type InN

    Science.gov (United States)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-12-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of ZeT is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  4. Electroless Nickel Deposition: An Alternative for Graphene Contacting.

    Science.gov (United States)

    Popescu, Sinziana M; Barlow, Anders J; Ramadan, Sami; Ganti, Srinivas; Ghosh, Biswajit; Hedley, John

    2016-11-16

    We report the first investigation into the potential of electroless nickel deposition to form ohmic contacts on single layer graphene. To minimize the contact resistance on graphene, a statistical model was used to improve metal purity, surface roughness, and coverage of the deposited film by controlling the nickel bath parameters (pH and temperature). The metalized graphene layers were patterned using photolithography and contacts deposited at temperatures as low as 60 °C. The contact resistance was 215 ± 23 Ω over a contact area of 200 μm × 200 μm, which improved upon rapid annealing to 107 ± 9 Ω. This method shows promise toward low-cost and large-scale graphene integration into functional devices such as flexible sensors and printed electronics.

  5. Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385 nm UV LED for significant emission enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Borysiewicz, M.A., E-mail: mbory@ite.waw.pl; Wzorek, M.; Gołaszewska, K.; Kruszka, R.; Pągowska, K.D.; Kamińska, E.

    2015-10-15

    Graphical abstract: - Highlights: • Polycrystalline ZnMgO:Al films grown by room temperature cosputtering. • Increase of Mg content leads to grain disorientation and Mg precipitation. • The unexpected behavior suggested to be related to Al presence. • ZnMgO:Al transparent electrode to p-GaN: 250% increase in 385 nm LED efficiency. - Abstract: We demonstrate nanocrystalline ZnMgO:Al transparent conducting films grown by room temperature magnetron sputtering. Unlike in the usual ZnMgO films grown by sputtering, the crystal orientation perpendicular to the substrate surface is strongly disrupted with the addition of Mg, even well below the phase separation threshold of Mg/(Mg + Zn) = 0.43. We argue that the presence of Al in the films promotes disoriented growth. Using transmission, Rutherford Backscattering Spectroscopy and electron microscopy measurements, we prove that not all Mg in the films substitutes Zn in the ZnO lattice, but also forms of precipitates. We apply the highest transmission films as contact electrodes to the p-GaN layer in a GaN-based 385 nm UV LED structure. By replacing the common opaque Ni/Au ohmic contact to p-GaN in ring geometry by a circular ZnMgO:Al electrode we obtain a 250% increase in irradiated power, which is also 148% higher than when Ni/Al is replaced by ZnO:Al.

  6. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu

    2009-12-09

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  7. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  8. High performance p-type segmented leg of misfit-layered cobaltite and half-Heusler alloy

    DEFF Research Database (Denmark)

    Le, Thanh Hung; Van Nong, Ngo; Snyder, Gerald Jeffrey;

    2015-01-01

    In this study, a segmented p-type leg of doped misfit-layered cobaltite Ca2.8Lu0.15Ag0.05Co4O9+δ and half-Heusler Ti0.3Zr0.35Hf0.35CoSb0.8Sn0.2 alloy was fabricated and characterized. The thermoelectric properties of single components, segmented leg, and the electrical contact resistance...... of the joint part were measured as a function of temperature. The output power generation characteristics of segmented legs were characterized in air under various temperature gradients, DT, with the hot side temperature up to 1153 K. At ΔT ≈756 K, the maximum conversion efficiency reached a value of ∼5......%, which is about 65% of that expected from the materials without parasitic losses. The long-term stability investigation for two weeks at the hot and cold side temperatures of 1153/397 K shows that the segmented leg has good durability as a result of stable and low electrical resistance contacts. 2015...

  9. Formation of p-type ZnO thin film through co-implantation

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  10. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Directory of Open Access Journals (Sweden)

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  11. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  12. CuNb3O8: A p-Type Semiconducting Metal Oxide Photoelectrode.

    Science.gov (United States)

    Joshi, Upendra A; Maggard, Paul A

    2012-06-07

    A new p-type CuNb3O8 polycrystalline photoelectrode was investigated and was determined to have indirect and direct bandgap sizes of 1.26 and 1.47 eV, respectively. The p-type polycrystalline film could be prepared on fluorine-doped tin oxide glass and yielded a cathodic photocurrent under visible-light irradiation (λ > 420 nm) with incident photon-to-current efficiencies of up to ∼6-7% and concomitant hydrogen evolution. A Mott-Schottky analysis yielded a flat band potential of +0.35 V versus RHE (pH = 6.3) and a calculated p-type dopant concentration of ∼7.2 × 10(15) cm(-3). The conduction band energies are found to be negative enough for the reduction of water under visible light irradiation. A hole mobility of ∼145 cm(2)/V·s was obtained from J(I)-V(2) measurements using the Mott-Gurney relation, which is ∼50% higher than that typically found for p-type Cu2O. DFT-based electronic structure calculations were used to probe the atomic and structural origins of the band gap transitions and carrier mobility. Thus, a new p-type semiconductor is discovered for potential applications in solar energy conversion.

  13. Chemical-free n-type and p-type multilayer-graphene transistors

    Energy Technology Data Exchange (ETDEWEB)

    Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  14. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    Science.gov (United States)

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  15. Minimization of the Ohmic Loss of Grooved Polarizer Mirrors in High-Power ECRH Systems

    Science.gov (United States)

    Wagner, D.; Leuterer, F.; Kasparek, W.; Stober, J.

    2016-10-01

    A set of two corrugated polarizer mirrors is typically used in high-power electron cyclotron resonance heating (ECRH) systems to provide the required polarization of the ECRH output beam. The ohmic losses of these mirrors can significantly exceed the losses of plane mirrors depending on the polarization of the incident beam with respect to the orientation of the grooves. Since polarizer mirrors incorporated into miter bends of a corrugated waveguide line are limited in size, active water cooling can become critical in high-power cw systems like the one for ITER. The ohmic loss of polarizer mirrors has been investigated experimentally at high power. A strategy to minimize the losses for given mirror geometries has been found.

  16. Global simulations of protoplanetary disks with ohmic resistivity and ambipolar diffusion

    CERN Document Server

    Gressel, Oliver; Nelson, Richard P; McNally, Colin P

    2015-01-01

    Protoplanetary disks are believed to accrete onto their central T Tauri star because of magnetic stresses. Recently published shearing box simulations indicate that Ohmic resistivity, ambipolar diffusion and the Hall effect all play important roles in disk evolution. In the presence of a vertical magnetic field, the disk remains laminar between 1-5au, and a magnetocentrifugal disk wind forms that provides an important mechanism for removing angular momentum. Questions remain, however, about the establishment of a true physical wind solution in the shearing box simulations because of the symmetries inherent in the local approximation. We present global MHD simulations of protoplanetary disks that include Ohmic resistivity and ambipolar diffusion, where the time-dependent gas-phase electron and ion fractions are computed under FUV and X-ray ionization with a simplified recombination chemistry. Our results show that the disk remains laminar, and that a physical wind solution arises naturally in global disk model...

  17. Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

    Energy Technology Data Exchange (ETDEWEB)

    Moura, F.A.B.F. de, E-mail: fidelis@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Lyra, M.L. [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Almeida, M.L. de; Ourique, G.S.; Fulco, U.L.; Albuquerque, E.L. [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil)

    2016-10-14

    We determine, by using a tight-binding model Hamiltonian, the characteristic current–voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation. - Highlights: • Ohmic resistance of finite segments of poly-CG DNA-like segments. • Possibility for the development of biosensor devices. • Methylation effect and electronic transport in DNA-like segments.

  18. Minimization of the Ohmic Loss of Grooved Polarizer Mirrors in High-Power ECRH Systems

    Science.gov (United States)

    Wagner, D.; Leuterer, F.; Kasparek, W.; Stober, J.

    2017-02-01

    A set of two corrugated polarizer mirrors is typically used in high-power electron cyclotron resonance heating (ECRH) systems to provide the required polarization of the ECRH output beam. The ohmic losses of these mirrors can significantly exceed the losses of plane mirrors depending on the polarization of the incident beam with respect to the orientation of the grooves. Since polarizer mirrors incorporated into miter bends of a corrugated waveguide line are limited in size, active water cooling can become critical in high-power cw systems like the one for ITER. The ohmic loss of polarizer mirrors has been investigated experimentally at high power. A strategy to minimize the losses for given mirror geometries has been found.

  19. Contact resistance at planar metal contacts on bilayer graphene and effects of molecular insertion layers

    Science.gov (United States)

    Nouchi, Ryo

    2017-03-01

    The possible origins of metal–bilayer graphene (BLG) contact resistance are investigated by taking into consideration the bandgap formed by interfacial charge transfer at the metal contacts. Our results show that a charge injection barrier (Schottky barrier) does not contribute to the contact resistance because the BLG under the contacts is always degenerately doped. We also showed that the contact-doping-induced increase in the density of states (DOS) of BLG under the metal contacts decreases the contact resistance owing to enhanced charge carrier tunnelling at the contacts. The contact doping can be enhanced by inserting molecular dopant layers into the metal contacts. However, carrier tunnelling through the insertion layer increases the contact resistance, and thus, alternative device structures should be employed. Finally, we showed that the inter-band transport by variable range hopping via in-gap states is the largest contributor to contact resistance when the carrier type of the gated channel is opposite to the contact doping carrier type. This indicates that the strategy of contact resistance reduction by the contact-doping-induced increase in the DOS is effective only for a single channel transport branch (n- or p-type) depending on the contact doping carrier type.

  20. KARAKTERISTIK PEMANASAN OHMIC SELAMA PROSES ALKALISASI RUMPUT LAUT JENIS Eucheuma cottonii.

    OpenAIRE

    Supratomo; Salengke; Abdul, Azis

    2012-01-01

    Fenomena pembangkitan panas dalam suatu bahan akibat disipasi energi listrik menjadi energi panas dikenal dengan Joule heating atau Ohmic heating. Fenomena ini dapat dimanfaatkan untuk pengolahan bahan pangan karena bahan tersebut memiliki kemampuan sebagai penghantar listrik. Dalam pengolahan rumput laut sebagai bahan untuk menghasilkan agar, karaginan dan alginat, proses pengolahannya dapat dilakukan dengan memanaskan rumput laut di dalam larutan alkali yang umumnya merupakan senyawa basa k...

  1. Ohmic lines for one-dimensional in-line and two-dimensional cylindrical Josephson junctions

    DEFF Research Database (Denmark)

    Helweg, C.; Levring, O. A.; Samuelsen, Mogens Rugholm;

    1985-01-01

    Expressions for the ohmic lines in the IV characteristic for one-dimensional in-line geometry Josephson junctions as well as for two-dimensional cylindrical Josephson junctions are presented. The expressions are compared to numerical simulations of Josephson junctions using the fluxon model; the ......; however, depending on the initial conditions we find 1/2 and 1/3 harmonic generation. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  2. Poisson-Nernst-Planck model with Chang-Jaffe, diffusion, and ohmic boundary conditions

    Science.gov (United States)

    Lelidis, I.; Macdonald, J. Ross; Barbero, G.

    2016-01-01

    Using the linear Poisson-Nernst-Planck impedance-response continuum model, we investigate the possible equivalences of three different types of boundary conditions previously proposed to model the electrode behavior of an electrolytic cell in the shape of a slab. We show analytically that the boundary conditions proposed long ago by Chang-Jaffe are fully equivalent to the ohmic boundary conditions only if the positive and negative ions have the same mobility, or when only ions of a single polarity are mobile. In the case where the ions have different and non-zero mobilities, we fit exact impedance spectra created for ohmic boundary conditions by using the Chang-Jaffe Poisson-Nernst-Planck response model, one that is dominated by diffusion effects. These fits yield conditions for essentially exact or approximate numerical correspondence for the complex impedance between the two models even in the unequal mobility case. Finally, diffusion type boundary conditions are shown to be fully equivalent to the ohmic one. Some limiting cases of the model parameters are investigated.

  3. Ohmic resistance affects microbial community and electrochemical kinetics in a multi-anode microbial electrochemical cell

    Science.gov (United States)

    Dhar, Bipro Ranjan; Ryu, Hodon; Santo Domingo, Jorge W.; Lee, Hyung-Sool

    2016-11-01

    Multi-anode microbial electrochemical cells (MxCs) are considered as one of the most promising configurations for scale-up of MxCs, but understanding of anode kinetics in multiple anodes is limited in the MxCs. In this study we assessed microbial community and electrochemical kinetic parameters for biofilms on individual anodes in a multi-anode MxC to better comprehend anode fundamentals. Microbial community analysis targeting 16S rRNA Illumina sequencing showed that Geobacter genus was abundant (87%) only on the biofilm anode closest to a reference electrode (low ohmic energy loss) in which current density was the highest among three anodes. In comparison, Geobacter populations were less than 1% for biofilms on other two anodes distant from the reference electrode (high ohmic energy loss), generating small current density. Half-saturation anode potential (EKA) was the lowest at -0.251 to -0.242 V (vs. standard hydrogen electrode) for the closest biofilm anode to the reference electrode, while EKA was as high as -0.134 V for the farthest anode. Our study proves that electric potential of individual anodes changed by ohmic energy loss shifts biofilm communities on individual anodes and consequently influences electron transfer kinetics on each anode in the multi-anode MxC.

  4. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  5. DyP-type peroxidases comprise a novel heme peroxidase family.

    Science.gov (United States)

    Sugano, Y

    2009-04-01

    Dye-decolorizing peroxidase (DyP) is produced by a basidiomycete (Thanatephorus cucumeris Dec 1) and is a member of a novel heme peroxidase family (DyP-type peroxidase family) that appears to be distinct from general peroxidases. Thus far, 80 putative members of this family have been registered in the PeroxiBase database (http://peroxibase.isbsib.ch/) and more than 400 homologous proteins have been detected via PSI-BLAST search. Although few studies have characterized the function and structure of these proteins, they appear to be bifunctional enzymes with hydrolase or oxygenase, as well as typical peroxidase activities. DyP-type peroxidase family suggests an ancient root compared with other general peroxidases because of their widespread distribution in the living world. In this review, firstly, an outline of the characteristics of DyP from T. cucumeris is presented and then interesting characteristics of the DyP-type peroxidase family are discussed.

  6. Demethoxycurcumin is a potent inhibitor of P-type ATPases from diverse kingdoms of life

    DEFF Research Database (Denmark)

    Dao, Trong Tuan; Sehgal, Pankaj; Thanh Tung, Truong;

    2016-01-01

    the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site......P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used...... as drugs. In this work a library of natural compounds was screened and we first identified curcuminoids as plasma membrane H+-ATPases inhibitors in plant and fungal cells. We also found that some of the commercial curcumins contain several curcuminoids. Three of these were purified and, among...

  7. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    Science.gov (United States)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  8. A simple model to estimate the optimal doping of p - Type oxide superconductors

    Directory of Open Access Journals (Sweden)

    Adir Moysés Luiz

    2008-12-01

    Full Text Available Oxygen doping of superconductors is discussed. Doping high-Tc superconductors with oxygen seems to be more efficient than other doping procedures. Using the assumption of double valence fluctuations, we present a simple model to estimate the optimal doping of p-type oxide superconductors. The experimental values of oxygen content for optimal doping of the most important p-type oxide superconductors can be accounted for adequately using this simple model. We expect that our simple model will encourage further experimental and theoretical researches in superconducting materials.

  9. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  10. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  11. 欧姆接触电极材料--锌浆%Zinc Brei, the Ohmic Contact Telex Material

    Institute of Scientific and Technical Information of China (English)

    张勇

    2001-01-01

    本文论述了选用B2O3-PbO-SiO2体系的玻璃组成的锌浆,能够在空气中烧渗成为欧姆接触电极,锌浆的表面接触电阻与烧成温度和速度有关,并且受不同窑炉的影响.

  12. Vertically aligned carbon nanotube field emitter arrays with Ohmic base contact to silicon by Fe-catalyzed chemical vapor deposition

    NARCIS (Netherlands)

    Morassutto, M.; Tiggelaar, Roald M.; Smithers, M.A.; Smithers, M.A.; Gardeniers, Johannes G.E.

    2016-01-01

    Abstract In this study, dense arrays of aligned carbon nanotubes are obtained by thermal catalytic chemical vapor deposition, using Fe catalyst dispersed on a thin Ta layer. Alignment of the carbon nanotubes depends on the original Fe layer thickness from which the catalyst dispersion is obtained by

  13. Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells

    KAUST Repository

    Mink, Justine E.

    2013-11-25

    We show that contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs). We experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study. We utilized the industry standard contact material, aluminum, as well as a metal, whose silicide has recently been recognized for its improved performance in smallest scale integration requirements, cobalt. Our study shows that improvements in contact engineering are not only important for device engineering but also for microsystems. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Passivation of a Metal Contact with a Tunneling Layer

    DEFF Research Database (Denmark)

    Loozen, X.; Larsen, J.B.; Dross, F.

    2011-01-01

    The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion...... of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm Al......Ox layer is found to be a candidate of choice for contact passivation....

  15. Tunneling mechanism and contact mechanics of colloidal nanoparticle assemblies

    Science.gov (United States)

    Biaye, Moussa; Zbydniewska, Ewa; Mélin, Thierry; Deresmes, Dominique; Copie, Guillaume; Cleri, Fabrizio; Sangeetha, Neralagatta; Decorde, Nicolas; Viallet, Benoit; Grisolia, Jérémie; Ressier, Laurence; Diesinger, Heinrich

    2016-11-01

    Nanoparticle assemblies with thiol-terminated alkyl chains are studied by conducting atomic force microscopy (c-AFM) regarding their use as strain gauges for touch-sensitive panels. Current-force spectroscopy is used as a characterization tool complementary to the macroscopic setup since it allows a bias to be applied to a limited number of junctions, overcoming the Coulomb blockade energy and focusing on the contact electromechanics and the transport mechanism across the ligand. First, transition voltage spectroscopy is applied with varying force to target the underlying tunneling mechanism by observing whether the transition between the ohmic and exponential current-voltage behavior is force-dependent. Secondly, current-force spectroscopy in the ohmic range below the transition voltage is performed. The current-force behavior of the AFM probe in contact with a nanoparticle multilayer is associated with the spread of force and current within the nanoparticle lattice and at the level of adjacent particles by detailed contact mechanics treatment. The result is twofold: concerning the architecture of sensors, this work is a sample case of contact electromechanics at scales ranging from the device scale down to the individual ligand molecule. Regarding transport across the molecule, the vacuum tunneling mechanism is favored over the conduction by coherent molecular states, which is a decision-making aid for the choice of ligand in applications.

  16. Realization of Ag-S codoped p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Tian Ning, E-mail: xtn9886@zju.edu.cn [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Li, Xiang; Lu, Zhong [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Chen, Yong Yue [Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Sui, Cheng Hua [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Wu, Hui Zhen [Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

    2014-10-15

    Highlights: • Ag-S codoped p-type ZnO thin films have been fabricated. • The films exhibit low resistivity and high Hall mobility and hole concentration. • A ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction has been fabricated and shows rectifying behaviors. - Abstract: Ag-S codoped ZnO films have been grown on quartz substrates by e-beam evaporation at low temperature (100 °C). The effects of Ag{sub 2}S content on the structural and electrical properties of the films were investigated. The results showed that 2 wt% Ag{sub 2}S doped films exhibited p-type conduction, with a resistivity of 0.0347 Ω cm, a Hall mobility of 9.53 cm{sup 2} V{sup −1} s{sup −1}, and a hole concentration of 1.89 × 10{sup 19} cm{sup −3} at room temperature. The X-ray photoelectron spectroscopy measurements showed that Ag and S have been incorporated into the films. To further confirm the p-type conduction of Ag-S codoped ZnO films, a ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction was fabricated and rectifying behaviors of which was measured. High electrical performance and low growth temperature indicate that Ag{sub 2}S is a promising dopant to fabricate p-type Ag-S codoped ZnO films.

  17. Relative Frequencies of G and P Types among Rotaviruses from Indian Diarrheic Cow and Buffalo Calves

    Science.gov (United States)

    Gulati, Baldev R.; Nakagomi, Osamu; Koshimura, Yumi; Nakagomi, Toyoko; Pandey, Ramayan

    1999-01-01

    While an increasing number of studies suggest that there is a high prevalence of rotaviruses with P8[11], a typical P type of bovine rotavirus (BRV), among human neonates or infants in India, no data are available on the distribution of G and P types of Indian BRVs. Thus, fecal specimens were collected from cow and buffalo calves under 1 month of age on organized dairy farms in India during the period between 1994 and 1997, and 36 rotavirus-positive specimens were used to determine the relative frequencies of the G and P types of Indian BRVs. As to the G type, G10 was predominant (83%), followed by G6 (6%). The majority (94%) of BRVs had P8[11], and only one isolate possessed P6[1]. The most common combination of G and P types was G10P8[11] (81%), followed by G6P6[1] (3%) and G6P8[11] (3%). The high prevalence of BRVs possessing P8[11] VP4s strongly supports the hypothesis that BRVs may cross the host species barrier and circulate among neonates in India. PMID:10325385

  18. Characterization of 3D-DDTC detectors on p-type substrates

    CERN Document Server

    Betta, G -F Dalla; Bosisio, Luciano; Darbo, Giovanni; Gabos, Paolo; Gemme, Claudia; Koehler, Michael; La Rosa, Alessandro; Parzefall, Ulrich; Pernegger, Heinz; Piemonte, Claudio; Povoli, Marco; Rachevskaia, Irina; Ronchin, Sabina; Wiik, Liv; Zoboli, Aanrea; Zorzi, Nicola

    2009-01-01

    We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.

  19. Origin and evolution of metal p-Type ATPases in Plantae (Archaeplastida

    Directory of Open Access Journals (Sweden)

    Marc eHanikenne

    2014-01-01

    Full Text Available Metal ATPases are a subfamily of P-type ATPases involved in the transport of metal cations across biological membranes. They all share an architecture featuring eight transmembrane domains in pairs of two and are found in prokaryotes as well as in a variety of Eukaryotes. In Arabidopsis thaliana, eight metal P-type ATPases have been described, four being specific to copper transport and four displaying a broader metal specificity, including zinc, cadmium and possibly copper and calcium. So far, few efforts have been devoted to elucidating the origin and evolution of these proteins in Eukaryotes. In this work, we use large-scale phylogenetics to show that metal P-type ATPases form a homogenous group among P-type ATPases and that their specialisation into either monovalent (Cu or divalent (Zn, Cd… metal transport stems from a gene duplication that took place early in the evolution of Life. Then, we demonstrate that the four subgroups of plant metal ATPases all have a different evolutionary origin and a specific taxonomic distribution, only one tracing back to the cyanobacterial progenitor of the chloroplast. Finally, we examine the subsequent evolution of these proteins in green plants and conclude that the genes thoroughly characterised in model organisms are often the result of lineage-specific gene duplications, which calls for caution when attempting to infer function from sequence similarity alone in non-model organisms.

  20. Synthesis of p-type and n-type nickel ferrites and associated electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Šutka, Andris, E-mail: andris.sutka@rtu.lv [Faculty of Material Science and Applied Chemistry, Riga Technical University, Paula Valdena 3, Riga, LV-1048 (Latvia); Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Pärna, Rainer [Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Estonian Nanotechnology Competence Centre, Ravila 14c, 50411, 51014 Tartu (Estonia); Käämbre, Tanel [Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Kisand, Vambola [Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Estonian Nanotechnology Competence Centre, Ravila 14c, 50411, 51014 Tartu (Estonia)

    2015-01-01

    We used sol–gel auto combustion to synthesize nickel ferrites of p-type and n-type conductivity by controlling the relative amounts of nickel and iron during synthesis. The obtained samples have been characterized by XRD, FE-SEM, electrical measurements and XPS. We observe huge differences in the effect of grain size on the electrical resistivity between the p-type and the n-type material when the grain size increases from nano to micro scale during annealing at temperatures from 900 {sup o}C to 1300 {sup o}C. The observed resistivity decrease (due to grain size) is four orders of magnitude in the n-type nickel ferrite, whereas the p-type material remains virtually unaffected. We rationalize this drastic difference to stem from a reverse contrast of the surface (grain shell) versus bulk (grain core) conductivity between p- and n-type ferrite. With the grain shells in p-type the easier charge carrier path the effect of scatter at grain boundaries is accordingly diminished, whereas in the n-type charge transport properties are controlled by (the number of) grain boundaries in a conduction path.

  1. A structural and functional perspective of DyP-type peroxidase family.

    Science.gov (United States)

    Yoshida, Toru; Sugano, Yasushi

    2015-05-15

    Dye-decolorizing peroxidase from the basidiomycete Bjerkandera adusta Dec 1 (DyP) is a heme peroxidase. This name reflects its ability to degrade several anthraquinone dyes. The substrate specificity, the amino acid sequence, and the tertiary structure of DyP are different from those of the other heme peroxidase (super)families. Therefore, many proteins showing the similar amino acid sequences to that of DyP are called DyP-type peroxidase which is a new family of heme peroxidase identified in 2007. In fact, all structures of this family show a similar structure fold. However, this family includes many proteins whose amino acid sequence identity to DyP is lower than 15% and/or whose catalytic efficiency (kcat/Km) is a few orders of magnitude less than that of DyP. A protein showing an activity different from peroxidase activity (dechelatase activity) has been also reported. In addition, the precise physiological roles of DyP-type peroxidases are unknown. These facts raise a question of whether calling this family DyP-type peroxidase is suitable. Here, we review the differences and similarities of structure and function among this family and propose the reasonable new classification of DyP-type peroxidase family, that is, class P, I and V. In this contribution, we discuss the adequacy of this family name.

  2. Method of fabricating a back-contact solar cell and device thereof

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bo; Smith, David; Cousins, Peter

    2016-08-02

    Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

  3. Mathematical modeling and microbiological verification of ohmic heating of a multicomponent mixture of particles in a continuous flow ohmic heater system with electric field parallel to flow.

    Science.gov (United States)

    Kamonpatana, Pitiya; Mohamed, Hussein M H; Shynkaryk, Mykola; Heskitt, Brian; Yousef, Ahmed E; Sastry, Sudhir K

    2013-11-01

    To accomplish continuous flow ohmic heating of a low-acid food product, sufficient heat treatment needs to be delivered to the slowest-heating particle at the outlet of the holding section. This research was aimed at developing mathematical models for sterilization of a multicomponent food in a pilot-scale ohmic heater with electric-field-oriented parallel to the flow and validating microbial inactivation by inoculated particle methods. The model involved 2 sets of simulations, one for determination of fluid temperatures, and a second for evaluating the worst-case scenario. A residence time distribution study was conducted using radio frequency identification methodology to determine the residence time of the fastest-moving particle from a sample of at least 300 particles. Thermal verification of the mathematical model showed good agreement between calculated and experimental fluid temperatures (P > 0.05) at heater and holding tube exits, with a maximum error of 0.6 °C. To achieve a specified target lethal effect at the cold spot of the slowest-heating particle, the length of holding tube required was predicted to be 22 m for a 139.6 °C process temperature with volumetric flow rate of 1.0 × 10(-4) m3/s and 0.05 m in diameter. To verify the model, a microbiological validation test was conducted using at least 299 chicken-alginate particles inoculated with Clostridium sporogenes spores per run. The inoculated pack study indicated the absence of viable microorganisms at the target treatment and its presence for a subtarget treatment, thereby verifying model predictions.

  4. The properties of metal contacts on TiO2 thin films produced by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Brus V. V.

    2010-10-01

    Full Text Available The article deals with research on volt-ampere characteristics of metal contacts (Al, Cr, In, Mo, Ti on titanium dioxide thin films and influence of annealing in vacuum on their electric properties. Volt-ampere characteristics measurements were taken by three-probe method. There was established that indium contact on TiO2 thin films possessed sharply defined ohmic properties.

  5. Raman study of Ni and Ni silicide contacts on 4H- and 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Cichon, Stanislav, E-mail: cichons@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6 (Czech Republic); Machac, Petr; Barda, Bohumil [Department of Solid State Engineering, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6 (Czech Republic); Machovic, Vladimir [Central Laboratories, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6 (Czech Republic); Slepicka, Petr [Department of Solid State Engineering, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6 (Czech Republic)

    2012-04-30

    Ni{sub 2}Si, NiSi and NiSi{sub 2} contacts were prepared on n-type 4H- and 6H-SiC(0001) by deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature annealing, as well as pure Ni contacts. After annealing, the individual contacts were analyzed by Raman spectroscopy and electrical property measurements. Contact structures were then etched-off and subsequently observed by means of AFM (Atomic Force Microscopy). Ni reacted with SiC, forming Ni{sub 2}Si and carbon. At Ni{sub x}Si{sub y}/SiC contact structures the respective silicides were already formed at low annealing temperatures, when only Schottky behavior of the structures was observed. The intended silicides, once formed, did not change any further with increasing annealing temperature. All contact structures provided good ohmic behavior after being annealed at 960 Degree-Sign C. By means of combined AFM and Raman analysis of the etched-off contacts we found that the silicide contact structures very probably did not react with SiC which is in accordance with the thermodynamic assumptions. After annealing the silicide contact structures at such temperature, when Schottky behavior changed to ohmic, a certain form of interaction between the SiC substrate and the silicide contact structures must have occurred. - Highlights: Black-Right-Pointing-Pointer Ni and Ni silicides as electrical contacts on N-type SiC. Black-Right-Pointing-Pointer Contacts examined by electrical measurements and Raman spectroscopy. Black-Right-Pointing-Pointer Ohmic behavior of contacts was reached after annealing at high temperatures. Black-Right-Pointing-Pointer Ni silicides showed to be non-reactive with SiC.

  6. Two high-field thermodynamically stable conductivity states in photoconductive CdS, one n-type and one p-type

    Energy Technology Data Exchange (ETDEWEB)

    Böer, Karl W. [Department of Physics and Astronomy, 217 Sharp Lab, University of Delaware, Newark, Delaware 19716 (United States)

    2015-08-28

    Photoconductive CdS is known to be n-type and develops high-field domains in the range of negative differential conductivities. These domains have been extensively discussed, and when remaining attached to the electrodes have been renamed Böer domains (a broader definition suggested earlier is misleading) [K. Thiessen, Phys. Status Solidi B 248, 2775 (2011)]. They are occurring at high applied voltage in a range at which the current becomes highly non-ohmic that is conventionally described as N-shaped when the conductance decreases with increasing bias or as S-shaped when the current starts to increase again. In this paper only such cases will be discussed in which the current stays below significant Joule heating (no current channel formation), and only for stationary electrode-attached high-field domains. These are the cathode-attached domains that are maintained by field-quenching and are thermodynamically stable. Their finding is summarized in the first segment of this paper. When the applied voltage is increased, an anode-attached hyper-high-field domain develops that is stabilized by a hole blocking anode and will be analyzed in more detail below. It will be shown that they are a thermodynamically stable p-type photoconductive state of CdS. These two new states can be used to determine the carrier densities and mobilities as function of the field and the effective work function in dependence of the spectral distribution of the optical excitation. In a thin slab adjacent to a blocking cathode, the quasi-Fermi levels are spread to a precise amount and are kept there in the entire high-field region. This opens the opportunity to analyze with small modulation of the excitation the trap transition coefficients near these quasi-Fermi levels separately, without broadening interference from other signals. This has already resulted in the discovery of an unusually sharp electron quenching level when the CdS was in a p-type state with an anode adjacent domain. It is

  7. P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment

    Science.gov (United States)

    Chand, R.; Esashi, M.; Tanaka, S.

    2014-04-01

    This paper reports the high temperature test results of SiC p-n junction diode up to 873 K. No significant change in diode series resistance (Rs) and a diode ideality factor of 1.02 were confirmed in air. We used the 4H-SiC diode which had a contact pad area of 300 μm × 300 μm and a junction area of 220 μm × 220 μm. Ohmic contact on both p and n (i.e. front and back) sides were made by Ni, because nickel silicide (NiSi) provides good ohmic contact for high temperature applications. The electrical contact pads of the SiC diode were made by sputter-depositing Ni or Pt on the NiSi ohmic contact. High temperature aging tests at 673 K, 773 K and 873 K were carried out in air, and the forward current-voltage (I-V) characteristics of the SiC diodes were measured at different time intervals to observe change in the junction and series resistance. Stable p-n junction characteristic and constant series resistance were confirmed for the Pt-metalized diodes at 673 K, 773 K and 873 K. However, the Ni-metallized diodes showed marginal increase in series resistance due to the oxidation of Ni metal contacts.

  8. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.

    2016-11-30

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  9. Thanatology in protoplanetary discs. The combined influence of Ohmic, Hall, and ambipolar diffusion on dead zones

    Science.gov (United States)

    Lesur, Geoffroy; Kunz, Matthew W.; Fromang, Sébastien

    2014-06-01

    Protoplanetary discs are poorly ionised due to their low temperatures and high column densities and are therefore subject to three "non-ideal" magnetohydrodynamic (MHD) effects: Ohmic dissipation, ambipolar diffusion, and the Hall effect. The existence of magnetically driven turbulence in these discs has been a central question since the discovery of the magnetorotational instability (MRI). Early models considered Ohmic diffusion only and led to a scenario of layered accretion, in which a magnetically "dead" zone in the disc midplane is embedded within magnetically "active" surface layers at distances of about 1-10 au from the central protostellar object. Recent work has suggested that a combination of Ohmic dissipation and ambipolar diffusion can render both the midplane and surface layers of the disc inactive and that torques due to magnetically driven outflows are required to explain the observed accretion rates. We reassess this picture by performing three-dimensional numerical simulations that include all three non-ideal MHD effects for the first time. We find that the Hall effect can generically "revive" dead zones by producing a dominant azimuthal magnetic field and a large-scale Maxwell stress throughout the midplane, provided that the angular velocity and magnetic field satisfy Ω·B > 0. The attendant large magnetic pressure modifies the vertical density profile and substantially increases the disc scale height beyond its hydrostatic value. Outflows are produced but are not necessary to explain accretion rates ≲ 10-7 M⊙ yr-1. The flow in the disc midplane is essentially laminar, suggesting that dust sedimentation may be efficient. These results demonstrate that if the MRI is relevant for driving mass accretion in protoplanetary discs, one must include the Hall effect to obtain even qualitatively correct results. Appendices are available in electronic form at http://www.aanda.org

  10. A Spectroscopic Study of Impurity Behavior in Neutral-beam and Ohmically Heated TFTR Discharges

    Science.gov (United States)

    Stratton, B. C.; Ramsey, A. T.; Boody, F. P.; Bush, C. E.; Fonck, R. J.; Groenbner, R. J.; Hulse, R. A.; Richards, R. K.; Schivell, J.

    1987-02-01

    Quantitative spectroscopic measurements of Z{sub eff}, impurity densities, and radiated power losses have been made for ohmic- and neutral-beam-heated TFTR discharges at a plasma current of 2.2 MA and toroidal field of 4.7 T. Variations in these quantities with line-average plasma density (anti n{sub e}) and beam power up to 5.6 MW are presented for discharges on a graphite movable limiter. A detailed discussion of the use of an impurity transport model to infer absolute impurity densities and radiative losses from line intensity and visible continuum measurements is given. These discharges were dominated by low-Z impurities with carbon having a considerably higher density than oxygen, except in high-anti n{sub e} ohmic discharges, where the densities of carbon and oxygen were comparable. Metallic impurity concentrations and radiative losses were small, resulting in hollow radiated power profiles and fractions of the input power radiated being 30 to 50% for ohmic heating and 30% or less with beam heating. Spectroscopic estimates of the radiated power were in good agreement with bolometrically measured values. Due to an increase in the carbon density, Z{sub eff} rose from 2.0 to 2.8 as the beam power increased from 0 to 5.6 MW, pointing to a potentially serious dilution of the neutron-producing plasma ions as the beam power increased. Both the low-Z and metallic impurity concentrations were approximately constant with minor radius, indicating no central impurity accumulation in these discharges.

  11. Infrared absorption and visible transparency in heavily doped p-type BaSnO3

    Science.gov (United States)

    Li, Yuwei; Sun, Jifeng; Singh, David J.

    2017-01-01

    The recent experimental work shows that perovskite BaSnO3 can be heavily doped by K to become a stable p-type semiconductor. Here, we find that p-type perovskite BaSnO3 retains transparency for visible light while absorbing strongly in the infrared below 1.5 eV. The origin of the remarkable optical transparency even with heavy doping is that the interband transitions that are enabled by empty states at the top of the valence band are concentrated mainly in the energy range from 0.5 to 1.5 eV, i.e., not extending past the near IR. In contrast to n-type, the Burstein-Moss shift is slightly negative, but very small reflecting the heavier valence bands relative to the conduction bands.

  12. CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

    CERN Document Server

    Hoedlmoser, H; Köhler, M; Nordlund, H

    2007-01-01

    Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

  13. Fabrication of p-type lithium niobate crystals by molybdenum doping and polarization

    Science.gov (United States)

    Tian, Tian; Kong, Yongfa; Liu, Hongde; Liu, Shiguo; Li, Wei; Chen, Shaolin; Xu, Jiayue

    2017-06-01

    The lack of p-type lithium niobate limits it serving as an active material. A series of Mo-doped and pure congruent lithium niobate crystals were grown by Czochralski method under different polarization conditions. Their dominant carrier species were characterized by holographic experiment. The results showed dominant charge carrier species may be changed from electrons to holes when lithium niobate crystal was doped with Mo ions and polarized under the current of 70mA for 30 minutes. It indicated that p-type lithium niobate crystal could be fabricated by Mo-doping and suitably controlling the polarization condition. Mo-doped lithium niobate crystals can be a promising candidate for active components.

  14. Enhancement of p-type mobility in tin monoxide by native defects

    KAUST Repository

    Granato, D. B.

    2013-05-31

    Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.

  15. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  16. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

    Directory of Open Access Journals (Sweden)

    Chun-You Wei

    2013-11-01

    Full Text Available Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

  17. Comment on 'Electronic Properties of Red P-Type T12S5 Single Crystals'

    Institute of Scientific and Technical Information of China (English)

    M. Cankurtaran; H. (C)elik

    2007-01-01

    Recently, Gamal et al. [Chin. Phys. Lett. 22 (2005) 1530] reported the results of electrical conductivity, Hall effect and thermoelectric measurements on p-type Th2S5 single crystals. From the experimental data for the temperature dependence of differential thermoelectric power, Gamal et al. determined the values of 2.66 × 10-41 kg and 2.50 × 10-41 kg, respectively, for the effective masses of electrons and holes in p-type Tl2S5, which are about ten orders of magnitude smaller than the free electron mass (9.11 × 10-31 kg). We argue that the anomalously small values obtained for the effective mass of charge carriers in Tl2S5 have no physical significance.

  18. An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED

    Institute of Scientific and Technical Information of China (English)

    ZHAO Li-qing; WU Chun-ya; HAO Da-shou; YAO Ying; MENG Zhi-guo; XIONG Shao-zhen

    2009-01-01

    Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro-posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the parameters of LTPS TFTs were extracted from the LTPS TFTs made in our lab. The simulation results indicate that the circuit can fulfill the driving function.

  19. Preparation and Photovoltaic Properties of p-Type Nano-ZnFe2O4

    Institute of Scientific and Technical Information of China (English)

    LI Zi-heng; ZOU Xu; LI Gen; ZOU Guang-tian

    2012-01-01

    p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment.Surface photovoltaic spectrum(SPS) and transient photovoltaic technology(TPV) were used for studying the photogenerated charge of nano-ZnFe2O4.Results show that the photovoltaic behavior of nano-ZnFe2O4 changed as the processing pressure increased.When the processing pressure was higher than 2 GPa,both SPS response interval and peak changed significantly.XPS results show that the non-lattice oxygen entered into the lattice and the content of lattice oxygen increased with the increase of processing pressure.The material changed from oxygen vacancy type to oxygen excess type and the photoelectric properties changed from n-type to p-type when the processing pressure is higher than 2GPa.

  20. In and out of the cation pumps: P-type ATPase structure revisited

    DEFF Research Database (Denmark)

    Bublitz, Maike; Poulsen, Hanne; Morth, Jens Preben

    2010-01-01

    Active transport across membranes is a crucial requirement for life. P-type ATPases build up electrochemical gradients at the expense of ATP by forming and splitting a covalent phosphoenzyme intermediate, coupled to conformational changes in the transmembrane section where the ions are translocated....... The marked increment during the last three years in the number of crystal structures of P-type ATPases has greatly improved our understanding of the similarities and differences of pumps with different ion specificities, since the structures of the Ca2+-ATPase, the Na+,K+-ATPase and the H+-ATPase can now...... be compared directly. Mechanisms for ion gating, charge neutralization and backflow prevention are starting to emerge from comparative structural analysis; and in combination with functional studies of mutated pumps this provides a framework for speculating on how the ions are bound and released as well...

  1. Perspectives of High-Temperature Thermoelectric Applications and p-type and n-type Aluminoborides

    Science.gov (United States)

    Mori, T.

    2016-10-01

    A need exists to develop high-temperature thermoelectric materials which can utilize high-temperature unutilized/waste heat in thermal power plants, steelworks, factories, incinerators, etc., and also focused solar power. The thermal power plant topping application is of potential high impact since it can sizably increase the efficiency of power plants which are the major supply of electrical power for many countries. Higher borides are possible candidates for their particular high-temperature stability, generally large Seebeck coefficients, α, and intrinsic low thermal conductivity. Excellent (|α| > 200 μV/K) p-type or n-type behavior was recently achieved in the aluminoboride YAl x B14 by varying the occupancy of Al sites, x. Finding p-type and n-type counterparts has long been a difficulty of thermoelectric research not limited to borides. This paper reviews possible high-temperature thermoelectric applications, and recent developments and perspectives of thermoelectric aluminoborides.

  2. CALCULATING THE HABITABLE ZONE OF BINARY STAR SYSTEMS. II. P-TYPE BINARIES

    Energy Technology Data Exchange (ETDEWEB)

    Haghighipour, Nader [Institute for Astronomy and NASA Astrobiology Institute, University of Hawaii-Manoa, Honolulu, HI 96822 (United States); Kaltenegger, Lisa [MPIA, Koenigstuhl 17, Heidelberg, D-69117 (Germany)

    2013-11-10

    We have developed a comprehensive methodology for calculating the circumbinary habitable zone (HZ) in planet-hosting P-type binary star systems. We present a general formalism for determining the contribution of each star of the binary to the total flux received at the top of the atmosphere of an Earth-like planet and use the Sun's HZ to calculate the inner and outer boundaries of the HZ around a binary star system. We apply our calculations to the Kepler's currently known circumbinary planetary systems and show the combined stellar flux that determines the boundaries of their HZs. We also show that the HZ in P-type systems is dynamic and, depending on the luminosity of the binary stars, their spectral types, and the binary eccentricity, its boundaries vary as the stars of the binary undergo their orbital motion. We present the details of our calculations and discuss the implications of the results.

  3. The Open-System Dicke-Model Quantum Phase Transition with a Sub-Ohmic Bath

    CERN Document Server

    Nagy, D

    2015-01-01

    We show that the critical exponent of a quantum phase transition in a damped-driven open system is determined by the spectral density function of the reservoir. We consider the open-system variant of the Dicke model, where the driven boson mode and also the large N-spin couple to independent reservoirs at zero temperature. The critical exponent, which is $1$ if there is no spin-bath coupling, decreases below 1 when the spin couples to a sub-Ohmic reservoir.

  4. Edge turbulence and transport studies with ergodic divertor, on Tore Supra ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Payan, J.; Garbet, X.; Clairet, F.; Devynck, P.; Laviron, C.; Chatenet, J.H.; Ghendrih, P.N.; Grosman, A. [Association Euratom-CEA, Centre d`Etudes de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Gervais, F.; Hennequin, P.; Quemeneur, A.; Truc, A. [Ecole Polytechnique, 91 - Palaiseau (France). Lab. de Physique des Milieux Ionises

    1995-12-31

    Edge turbulence and transport studies have been performed when the ergodic divertor is applied on Tore Supra ohmic discharges. A modification of radial electric field profiles is expected. Such a change could influence edge transport and turbulence. A CO{sub 2} laser scattering diagnostic, ALTAIR, has been used to study the turbulence changes at the plasma edge. Reflectometry (used at fixed frequency) gives also access to localized turbulence measurements. Preliminary results from reflectometry are presented and compared to ALTAIR results. (K.A.) 6 refs.; 4 figs.

  5. Transient snakes in an ohmic plasma associated with a minor disruption in the HT-7 Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Mao, Songtao; Xu, Liqing; Hu, Liqun; Chen, Kaiyun [Chinese Academy of Sciences, Hefei (China)

    2014-05-15

    A transient burst (∼2 ms, an order of the fast-particle slowdown timescale) of a spontaneous snake is observed for the first time in a HT-7 heavy impurity ohmic plasma. The features of the low-Z impurity snake are presented. The flatten electron profile due to the heavy impurity reveals the formation of a large magnetic island. The foot of the impurity accumulation is consistent with the location of the transient snake. The strong frequency-chirping behaviors and the spatial structures of the snake are also presented.

  6. Equilibrium dynamics of the sub-Ohmic spin-boson model under bias

    Science.gov (United States)

    Zheng, Da-Chuan; Tong, Ning-Hua

    2017-06-01

    Using the bosonic numerical renormalization group method, we studied the equilibrium dynamical correlation function C(ω) of the spin operator σ z for the biased sub-Ohmic spin-boson model. The small-ω behavior C(ω )\\propto {ω }s is found to be universal and independent of the bias ɛ and the coupling strength α (except at the quantum critical point α ={α }{{c}} and ɛ = 0). Our NRG data also show C(ω )\\propto {χ }2{ω }s for a wide range of parameters, including the biased strong coupling regime (\\varepsilon \

  7. Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

    Science.gov (United States)

    de Moura, F. A. B. F.; Lyra, M. L.; de Almeida, M. L.; Ourique, G. S.; Fulco, U. L.; Albuquerque, E. L.

    2016-10-01

    We determine, by using a tight-binding model Hamiltonian, the characteristic current-voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation.

  8. Sensitization of p-type NiO using n-type conducting polymers

    NARCIS (Netherlands)

    Chavhan, S.D.; Abellon, R.D.; Breemen, A.J.J.M. van; Koetse, M.M.; Sweelssen, J.; Savenije, T.J.

    2010-01-01

    We report on the sensitization of a p-type inorganic semiconductor, NiO, by n-type conjugated polymers. NiO thin films were deposited using RF sputtering in pure Ar (NiO A) or in Ar + O2 (90% + 10%) (NiO B). XPS and Kelvin probe measurements indicate the incorporation of oxygen in NiO B

  9. Sensitization of p-type NiO using n-type conducting polymers

    NARCIS (Netherlands)

    Chavhan, S.D.; Abellon, R.D.; Breemen, A.J.J.M. van; Koetse, M.M.; Sweelssen, J.; Savenije, T.J.

    2010-01-01

    We report on the sensitization of a p-type inorganic semiconductor, NiO, by n-type conjugated polymers. NiO thin films were deposited using RF sputtering in pure Ar (NiO A) or in Ar + O2 (90% + 10%) (NiO B). XPS and Kelvin probe measurements indicate the incorporation of oxygen in NiO B l

  10. Investigation of negative photoconductivity in p-type Pb1-xSnxTe film

    Science.gov (United States)

    Tavares, M. A. B.; da Silva, M. J.; Peres, M. L.; de Castro, S.; Soares, D. A. W.; Okazaki, A. K.; Fornari, C. I.; Rappl, P. H. O.; Abramof, E.

    2017-01-01

    We investigated the negative photoconductivity (NPC) effect that was observed in a p-type Pb1-xSnxTe film for temperatures varying from 300 K down to 85 K. We found that this effect is a consequence of defect states located in the bandgap which act as trapping levels, changing the relation between generation and recombination rates. Theoretical calculations predict contributions to the NPC from both conduction and valence bands, which are in accordance with the experimental observations.

  11. Sensitization of p-type NiO using n-type conducting polymers

    NARCIS (Netherlands)

    Chavhan, S.D.; Abellon, R.D.; Breemen, A.J.J.M. van; Koetse, M.M.; Sweelssen, J.; Savenije, T.J.

    2010-01-01

    We report on the sensitization of a p-type inorganic semiconductor, NiO, by n-type conjugated polymers. NiO thin films were deposited using RF sputtering in pure Ar (NiO A) or in Ar + O2 (90% + 10%) (NiO B). XPS and Kelvin probe measurements indicate the incorporation of oxygen in NiO B l

  12. Radiation damage studies of multi-guard ring p-type bulk diodes

    CERN Document Server

    Bortoletto, D; Günther, M; Grim, G P; Lander, R L; Willard, S; Li, Z

    1999-01-01

    Several diodes with different multi-guard ring structures were fabricated from 10 k OMEGA cm p-type bulk material. Studies on the performance of such devices are presented here. They include the measurement of the leakage current, breakdown voltage and charge collection efficiency before and after 2x10 sup 1 sup 4 p/cm sup 2 irradiation with 63.3 MeV kinetic protons. (author)

  13. Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles

    Energy Technology Data Exchange (ETDEWEB)

    Makarenko, L.F., E-mail: makarenko@bsu.by [Department of Applied Mathematics and Computer Science, Belarusian State University, Independence Ave. 4, 220030 Minsk (Belarus); Moll, M. [CERN, Geneva (Switzerland); Evans-Freeman, J.H. [University of Canterbury, Christchurch (New Zealand); Lastovski, S.B.; Murin, L.I.; Korshunov, F.P. [Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk (Belarus)

    2012-08-01

    New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states.

  14. Method for producing high carrier concentration p-Type transparent conducting oxides

    Science.gov (United States)

    Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

    2009-04-14

    A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

  15. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-06-25

    Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

  16. Electronic inhomogeneity in n- and p-type PbTe detected by 125Te NMR

    Science.gov (United States)

    Levin, E. M.; Heremans, J. P.; Kanatzidis, M. G.; Schmidt-Rohr, K.

    2013-09-01

    125Te nuclear magnetic resonance spectra and spin-lattice relaxation of n- and p-type PbTe, self-doping narrow band-gap semiconductors, have been studied and compared to those of p-type GeTe. Spin-lattice relaxation in GeTe can be fit by one component, while that in both PbTe samples must be fit by at least two components, showing electronically homogeneous and inhomogeneous materials, respectively. For PbTe-based materials, the spin-lattice relaxation rate 1/T1 increases linearly with carrier concentration. The data for GeTe fall on the same line and allow us to extend this plot to higher concentrations. Long and short T1 components in both PbTe samples reflect “low,” ˜1017 cm-3, and “high,” ˜1018 cm-3, carrier concentration components. Carrier concentrations in both n- and p-type PbTe samples obtained from the Hall and Seebeck effects generally match the “high” carrier concentration component, and to some extent, ignore the “low” one. This demonstrates that the Hall and Seebeck effects may have a limited ability for the determination of carrier concentration in complex thermoelectric PbTe-based and other multicomponent materials.

  17. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deckers, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium); Bourgeois, E. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Jivanescu, M. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Abass, A. [Photonics Research Group (INTEC), Ghent University-imec, Sint-Pietersnieuwstraat 41, B-9000 Ghent (Belgium); Van Gestel, D.; Van Nieuwenhuysen, K.; Douhard, B. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); D' Haen, J.; Nesladek, M.; Manca, J. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Gordon, I.; Bender, H. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); Stesmans, A. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Mertens, R.; Poortmans, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium)

    2015-03-31

    We have investigated fine grained polycrystalline silicon thin films grown by direct chemical vapor deposition on oxidized silicon substrates. More specifically, we analyze the influence of the doping type on the properties of this model polycrystalline silicon material. This includes an investigation of defect passivation and benchmarking of minority carrier properties. In our investigation, we use a variety of characterization techniques to probe the properties of the investigated polycrystalline silicon thin films, including Fourier Transform Photoelectron Spectroscopy, Electron Spin Resonance, Conductivity Activation, and Suns-Voc measurements. Amphoteric silicon dangling bond defects are identified as the most prominent defect type present in these layers. They are the primary recombination center in the relatively lowly doped polysilicon thin films at the heart of the current investigation. In contrast with the case of solar cells based on Czochralski silicon or multicrystalline silicon wafers, we conclude that no benefit is found to be associated with the use of n-type dopants over p-type dopants in the active absorber of the investigated polycrystalline silicon thin-film solar cells. - Highlights: • Comparison of n- and p-type absorbers for thin-film poly-Si solar cells • Extensive characterization of the investigated layers' characteristics • Literature review pertaining the use of n-type and p-type dopants in silicon.

  18. P-type electronic and thermal transport properties of Mg2Sn1-xSix

    Science.gov (United States)

    Kim, Sunphil; Wiendlocha, Bartlomiej; Heremans, Joseph P.

    2013-03-01

    P-type Mg2Sn doped with various acceptors(1)(2) has been studied as a potential thermoelectric material. Because of its narrow band gap and high lattice thermal conductivity, the zT values of the binary compound are limited: zTmax reported is 0.3(3). In this work, we synthesize and characterize p-type-doped Mg2Sn1-xSix with various acceptors. Silicon is added in order to widen the band gap and scatter the phonons. The conduction band degeneracy that yields excellent zT in n-type material in the Mg2Sn1-xSix alloy system unfortunately does not apply to p-type material. Thermomagnetic and galvanomagnetic properties (electrical resistivity, Seebeck, Hall, and Nernst coefficients) are measured, along with thermal conductivity and band gap measurements. Finally, zT values are reported. (1) H. Y. Chen et al. Journal of Electronic Materials, Vol. 38, No. 7, 2009 (2) S. Choi et al. Journal of Electronic Materials, Vol. 41, No. 6, 2012 (3) H. Y. Chen et al. Phys. Status Solidi A 207, No. 11, 2523-2531 (2010) The work is supported by the joint NSF/DOE program on thermoelectrics, NSF-CBET-1048622

  19. Effective p-type N-doped WS{sub 2} monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xu, E-mail: zhaoxu@htu.cn; Xia, Congxin; Wang, Tianxing; Peng, Yuting; Dai, Xianqi

    2015-11-15

    Based on density functional theory, the characteristics of n- and p-type dopants are investigated by means of group V and VII atoms substituting sulfur in the WS{sub 2} monolayer. Numerical results show that for each doping case, the formation energy is lower under W-rich condition, which indicates that it is energy favorable to incorporate group V and VII atoms into WS{sub 2} under W-rich experimental conditions. Moreover, compared with other dopant cases, N-doped WS{sub 2} monolayer owns the lowest formation energy. In particular, the transition level of (−1/0) is only 75 meV in the N-doped case, which indicates that N impurities can offer effective p-type carriers in the WS{sub 2} monolayer. - Highlights: • The formation energy is lower under W-rich conditions. • N-doped system owns the lowest formation energy compared with other atoms. • The transition level of N-doping in WS{sub 2} is 75 meV. • N impurities can offer effective p-type carriers in the WS{sub 2}.

  20. Demethoxycurcumin Is A Potent Inhibitor of P-Type ATPases from Diverse Kingdoms of Life.

    Science.gov (United States)

    Dao, Trong Tuan; Sehgal, Pankaj; Tung, Truong Thanh; Møller, Jesper Vuust; Nielsen, John; Palmgren, Michael; Christensen, Søren Brøgger; Fuglsang, Anja Thoe

    2016-01-01

    P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used as drugs. In this work a library of natural compounds was screened and we first identified curcuminoids as plasma membrane H+-ATPases inhibitors in plant and fungal cells. We also found that some of the commercial curcumins contain several curcuminoids. Three of these were purified and, among the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site of these pumps. Future research on biological effects of commercial preparations of curcumin should consider the heterogeneity of the material.

  1. p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation

    Directory of Open Access Journals (Sweden)

    Chien-Ming Lee

    2013-01-01

    Full Text Available The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ and float-zone (FZ material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG and the junction isolation process that is required after the conventional thermal POCl3 diffusion process. Moreover, the good passivation performance of the ion implantation process improves Voc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl3 diffusion process.

  2. Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5

    Science.gov (United States)

    Hooda, M. K.; Yadav, C. S.

    2017-07-01

    Thermoelectric properties of polycrystalline p-type ZrTe5 are reported in the temperature (T) range of 2-340 K. Thermoelectric power (S) is positive and reaches up to 458 μV/K at 340 K on increasing T. The value of Fermi energy 16 meV suggests a low carrier density of ≈9.5 × 1018 cm-3. A sharp anomaly in S data is observed at 38 K, which seems intrinsic to p-type ZrTe5. The thermal conductivity (κ) value is low (2 W/m K at T = 300 K) with major contribution from the lattice part. Electrical resistivity data show the metal to semiconductor transition at T ˜ 150 K and non-Arrhenius behavior in the semiconducting region. The figure of merit zT (0.026 at T = 300 K) is ˜63% higher than that of HfTe5 (0.016) and better than those of the conventional SnTe, p-type PbTe, and bipolar pristine ZrTe5 compounds.

  3. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    Science.gov (United States)

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-05-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4‧-(2,2-dicyanovinyl)-[1,1‧-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up.

  4. Evaluation of non-thermal effects of electricity on anthocyanin degradation during ohmic heating of jaboticaba (Myrciaria cauliflora) juice.

    Science.gov (United States)

    Mercali, Giovana Domeneghini; Gurak, Poliana Deyse; Schmitz, Frederico; Marczak, Ligia Damasceno Ferreira

    2015-03-15

    This study investigated the non-thermal effects of electricity on anthocyanin degradation during ohmic heating of jaboticaba juice. For this, temperature profiles during conventional and ohmic heating processes were matched, and the degradation kinetics of anthocyanins were compared at temperatures ranging from 70 to 90°C. The monomeric anthocyanin content was quantified by UV-Visible spectroscopy using the pH-differential method. Anthocyanin degradation was fitted to a first-order model. The rate constants ranged from 1.7 to 7.5 × 10(-3)min(-1) and from 1.8 to 7.6 × 10(-3)min(-1) for ohmic and conventional heating, respectively. The analysis of variance (α=0.05) showed no significant differences between rate constants of the ohmic and conventional heating at the same temperatures. All kinetic and thermodynamic parameters evaluated showed similar values for both technologies. These results indicate that the presence of the oscillating electric field did not affect the degradation rates of anthocyanins during ohmic heating. Copyright © 2014 Elsevier Ltd. All rights reserved.

  5. Prioritized Contact Transport Stream

    Science.gov (United States)

    Hunt, Walter Lee, Jr. (Inventor)

    2015-01-01

    A detection process, contact recognition process, classification process, and identification process are applied to raw sensor data to produce an identified contact record set containing one or more identified contact records. A prioritization process is applied to the identified contact record set to assign a contact priority to each contact record in the identified contact record set. Data are removed from the contact records in the identified contact record set based on the contact priorities assigned to those contact records. A first contact stream is produced from the resulting contact records. The first contact stream is streamed in a contact transport stream. The contact transport stream may include and stream additional contact streams. The contact transport stream may be varied dynamically over time based on parameters such as available bandwidth, contact priority, presence/absence of contacts, system state, and configuration parameters.

  6. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    Science.gov (United States)

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-09

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).

  7. Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

    Directory of Open Access Journals (Sweden)

    Arash Dehzangi

    2011-01-01

    Full Text Available Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronics in order to decrease the energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by Atomic Force Microscopy (AFM and wet etching on p-type Silicon On Insulator (SOI wafer. Then, we checked the characteristic and conductance trend in this device regarding to semi-classical approach by Semiconductor Probe Analyser (SPA. Results: We observed in characteristic of the device directly proportionality of the negative gate voltage and Source-Drain current. In semi classical approach, negative Gate voltage decreased the energy States of the Nano-wire between the source and the drain. The graph for positive gate voltage plotted as well to check. In other hand, the conductance will be following characteristic due to varying the gate voltage under the different drain-source voltage. Conclusion: The channel energy states are supposed to locate between two electrochemical potentials of the contacts in order to transform the charge. For the p-type channel the transform of the carriers is located in valence band and changing the positive or negative gate voltage, making the valence band energy states out of or in the area between the electrochemical potentials of the contacts causing the current reduced or increased.

  8. Langmuir monolayers of gold nanoparticles: from ohmic to rectifying charge transfer

    Energy Technology Data Exchange (ETDEWEB)

    Chen Shaowei

    2003-10-31

    The lateral electrical/electronic conductivity of alkanethiolate-protected gold nanoparticles was evaluated at the air/water interface by using the Langmuir method. For particles with short protecting monolayers (C4Au and C5Au), the current-voltage profiles exhibited ohmic behaviors with conductivity several orders of magnitude smaller than that of bulk gold. The conductivity is found to decrease exponentially with increasing interparticle spacing. This is interpreted on the basis of electron tunneling/hopping between neighboring particles where the tunneling coefficient ({beta}) is found around 0.5 Angst{sup -1}. With longer alkyl protecting layers (C6 and above), the nanoparticle monolayers demonstrated rectifying charge-transfer characters. This transition from ohmic to diode-like responses can be attributable to the nanocomposite structure of the particle molecules, where the chemical nature of the core and the protecting monolayers, along with the interparticle environment and ordering, are found to play an important role in regulating the electrical/electronic properties of the nanoassemblies.

  9. Numerical modeling of tokamak breakdown phase driven by pure Ohmic heating under ideal conditions

    Science.gov (United States)

    Jiang, Wei; Peng, Yanli; Zhang, Ya; Lapenta, Giovanni

    2016-12-01

    We have simulated tokamak breakdown phase driven by pure Ohmic heating with implicit particle in cell/Monte Carlo collision (PIC/MCC) method. We have found two modes can be differentiated. When performing breakdown at low initial gas pressure, we find that it works at lower density and current, but higher temperature, and requires lower heating power, compared to when having a high initial pressure. Further, two stages can be distinguished during the avalanche process. One is the fast avalanche stage, in which the plasma is heated by induced toroidal electric field. The other is the slow avalanche stage, which begins when the plasma density reaches 1015 m-3. It has been shown that ions are mainly heated by ambipolar field and become stochastic in the velocity distribution. However, when the induced electric field is low, there exists a transition phase between the two stages. Our model simulates the breakdown and early hydrogen burn-through under ideal conditions during tokamak start-up. It adopted fewer assumptions, and can give an idealized range of operative parameters for Ohmic start-up. Qualitatively, the results agree well with certain experimental observations.

  10. Evaluation of non-thermal effects of electricity on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating.

    Science.gov (United States)

    Jaeschke, Débora Pez; Marczak, Ligia Damasceno Ferreira; Mercali, Giovana Domeneghini

    2016-05-15

    The effect of electric field on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating was evaluated. Ascorbic acid kinetic degradation was evaluated at 80, 85, 90 and 95°C during 60 min of thermal treatment by ohmic and conventional heating. Carotenoid degradation was evaluated at 90 and 95°C after 50 min of treatment. The different temperatures evaluated showed the same effect on degradation rates. To investigate the influence of oxygen concentration on the degradation process, ohmic heating was also carried out under rich and poor oxygen modified atmospheres at 90°C. Ascorbic acid and carotenoid degradation was higher under a rich oxygen atmosphere, indicating that oxygen is the limiting reagent of the degradation reaction. Ascorbic acid and carotenoid degradation was similar for both heating technologies, demonstrating that the presence of the oscillating electric field did not influence the mechanisms and rates of reactions associated with the degradation process.

  11. Effect of composition on the polarization and ohmic resistances of LSM/YSZ composite cathodes in solid oxide fuel cell

    Indian Academy of Sciences (India)

    B SHRI PRAKASH; S SENTHIL KUMAR; S T ARUNA

    2017-06-01

    La0.8Sr0.2MnO$_3$−$\\delta$ (LSM)/8 mol% yttria-stabilized ZrO$_2$ (YSZ) (LSM/YSZ) composite cathodes with varying composition are studied for both polarization and ohmic resistance by electrochemical impedance spectroscopy. It was found that total resistance and polarization resistance are lowest for the composite with 60 wt% of LSM (LSM60/YSZ40). However, the ohmic resistance was highest for the same composition and amounted to 60% of the total resistance value. Compositional dependence of resistances has been explained based on the variations of the triple phase boundaries and width of the O$_2$−ion migration path with the composition of the electrode. Based on the observed area specific ohmic resistance values for the composite cathodes, it is proposed to verify the advantages of LSM/YSZ over LSM cathode in anode-supported solidoxide fuel cell with thin electrolyte.

  12. The Effect of Buoyancy Force in Computational Fluid Dynamics Simulation of a Two-Dimensional Continuous Ohmic Heating Process

    Directory of Open Access Journals (Sweden)

    Elzubier A. Salih

    2009-01-01

    Full Text Available Problem statement: Earlier research on ohmic heating technique focused on viscous food and foods containing solid particles. In this study, use of ohmic heating on sterilization of guava juice is carried out. Computational fluid dynamics was used to model and simulate the system. Investigate the buoyancy effect on the CFD simulation of continuous ohmic heating systems of fluid foods. Approach: A two-dimensional model describing the flow, temperature and electric field distribution of non-Newtonian power law guava juice fluid in a cylindrical continuous ohmic heating cell was developed. The electrical conductivity, thermo physical and rheological properties of the fluid was temperature dependent. Numerical simulation was carried out using FLUENT 6.1 software package. A user defined functions available in FLUENT 6.1 was employed for the electric field equation. The heating cell used consisted of a cylindrical tube of diameter 0.05 m, height 0.50 m and having three collinear electrodes of 0.02 m width separated by a distance of 0.22 m. The sample was subjected to zero voltage at the top and bottom of electrodes while electrical potential of 90 volts (AC 50-60 Hz was set at the middle electrode. The inlet velocity is 0.003 m sec-1 and the temperature is in the range of 30-90°C. Results: Simulation was carried with and without buoyancy driven force effect. The ohmic heating was successfully simulated using CFD and the results showed that the buoyancy had a strong effect in temperature profiles and flow pattern of the collinear electrodes configuration ohmic heating. A more uniform velocity and temperature profiles were obtained with the buoyancy effect included. Conclusion: For accurate results, the inclusion of buoyancy effect into the CFD simulation is important.

  13. Ivermectin is a nonselective inhibitor of mammalian P-type ATPases.

    Science.gov (United States)

    Pimenta, Paulo Henrique Cotrim; Silva, Claudia Lucia Martins; Noël, François

    2010-02-01

    Ivermectin is a large spectrum antiparasitic drug that is very safe at the doses actually used. However, as it is being studied for new applications that would require higher doses, we should pay attention to its effects at high concentrations. As micromolar concentrations of ivermectin have been reported to inhibit the sarco-endoplasmic reticulum Ca(2+)-ATPase (SERCA), we decided to investigate its putative inhibitory effect on other two important P-type ATPases, namely the Na(+) , K(+)-ATPase and H(+)/K(+)-ATPase. We first extended the data on SERCA, using preparations from rat enriched in SERCA1a (extensor digitorum longus) and 1b (heart) isoforms. Secondly, we tested the effect of ivermectin in two preparations of rat Na(+), K(+)-ATPase in order to appreciate its putative selectivity towards the alpha(1) isoform (kidney) and the alpha(2)/alpha(3) isoforms (brain), and in an H(+)/K(+)-ATPase preparation from rat stomach. Ivermectin inhibited all these ATPases with similar IC(50) values (6-17 microM). With respect to the inhibition of the Na(+), K(+)-ATPase, ivermectin acts by a mechanism different from the classical cardiac glycosides, based on selectivity towards the isoforms, sensibility to the antagonistic effect of K(+) and to ionic conditions favoring different conformations of the enzyme. We conclude that ivermectin is a nonselective inhibitor of three important mammalian P-type ATPases, which is indicative of putative important adverse effects if this drug were used at high doses. As a consequence, we propose that novel analogs of ivermectin should be developed and tested both for their parasitic activity and in vitro effects on P-type ATPases.

  14. Enhanced photovoltaic effect of ruthenium complex-modified graphene oxide with P-type conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei, E-mail: jj_zw_js@sina.com.cn; Bai, Huicong; Zhang, Yu; Sun, Ying; Lin, Shen; Liu, Jian; Yang, Qi; Song, Xi-Ming, E-mail: songlab@lnu.edu.cn

    2014-10-15

    A graphene oxide nanocomposite with bis(1,10-phenanthroline)(N-(2-aminoethyl)-4-(4-methyl-2,2-bipyridine-4-yl) formamide) ruthenium (Ru(phen){sub 2}(bpy-NH{sub 2})(PF{sub 6}){sub 2}), a ruthenium complex, was synthesized by amidation reaction between amino group of the ruthenium complex and carboxyl group of GO. The as-prepared Ru(II)–GO composite was characterized by infrared (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet–visible (UV–Vis) absorption spectra, fluorescence spectra, surface photovoltage (SPV) spectrum and transient photovoltage (TPV) technology. This nanocomposite showed a typical p-type character and an enhanced photovoltaic effect at long timescale of about 3 × 10{sup −3} s compared to GO alone. A reversible rise/decay of the photocurrent in response to the on/off illumination step was also observed in a photoelectrochemical cell of the Ru(II)–GO composite. The photocurrent response of the Ru(II)–GO film was remarkably higher than that of GO film. Therefore, this Ru(II)–GO composite is believed to be a promising p-type photoelectric conversion material for further photovoltaic applications. - Highlights: • A new dye-sensitized graphene oxide nanocomposite was reported. • A photo-induced charge transfer process in this nanocomposite was confirmed. • This composite showed a typical p-type conductivity. • This composite showed an enhanced photovoltaic effect at a long timescale.

  15. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    Science.gov (United States)

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-07

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future.

  16. Ultrananocrystalline diamond contacts for electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha V.; Smedley, John; Muller, Erik

    2016-11-01

    A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

  17. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    KAUST Repository

    Hota, M. K.

    2014-04-14

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

  18. Initial results from 3D-DDTC detectors on p-type substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zoboli, A., E-mail: zoboli@disi.unitn.i [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy); Bosisio, L. [Dipartimento di Fisica, Universita di Trieste, and INFN, Sezione di Trieste, Via A. Valerio, 2, I-34127 Trieste (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Piemonte, C.; Ronchin, S.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy)

    2010-01-11

    Owing to their superior radiation hardness compared to planar detectors, 3D detectors are one of the most promising technologies for the LHC upgrade foreseen in 2017. Fondazione Bruno Kessler has developed 3D Double-side Double-Type Column (3D-DDTC) detectors providing a technological simplifications with respect to a standard 3D process while aiming at comparable detector performance. We present selected results from the electrical characterization of 3D-DDTC structures from the second batch made on p-type substrates, supported also by TCAD simulations.

  19. Structure and mechanism of Zn2+-transporting P-type ATPases

    DEFF Research Database (Denmark)

    Wang, Kaituo; Sitsel, Oleg; Meloni, Gabriele

    2014-01-01

    Zinc is an essential micronutrient for all living organisms. It is required for signalling and proper functioning of a range of proteins involved in, for example, DNA binding and enzymatic catalysis1. In prokaryotes and photosynthetic eukaryotes, Zn2+-transporting P-type ATPases of class IB (Znt....... The structures reveal a similar fold to Cu+-ATPases, with an amphipathic helix at the membrane interface. A conserved electronegative funnel connects this region to the intramembranous high-affinity ion-binding site and may promote specific uptake of cellular Zn2+ ions by the transporter. The E2P structure...

  20. P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC

    Science.gov (United States)

    Adam, W.; Bergauer, T.; Brondolin, E.; Dragicevic, M.; Friedl, M.; Frühwirth, R.; Hoch, M.; Hrubec, J.; König, A.; Steininger, H.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Lauwers, J.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Beghin, D.; Brun, H.; Clerbaux, B.; Delannoy, H.; De Lentdecker, G.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, Th.; Léonard, A.; Luetic, J.; Postiau, N.; Seva, T.; Vanlaer, P.; Vannerom, D.; Wang, Q.; Zhang, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; De Clercq, J.; D'Hondt, J.; Deroover, K.; Lowette, S.; Moortgat, S.; Moreels, L.; Python, Q.; Skovpen, K.; Van Mulders, P.; Van Parijs, I.; Bakhshiansohi, H.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; Delaere, C.; Delcourt, M.; De Visscher, S.; Francois, B.; Giammanco, A.; Jafari, A.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Michotte, D.; Musich, M.; Piotrzkowski, K.; Quertenmont, L.; Szilasi, N.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Vander Donckt, M.; Viret, S.; Agram, J.-L.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.-M.; Chabert, E.; Chanon, N.; Charles, L.; Conte, E.; Fontaine, J.-Ch.; Gross, L.; Hosselet, J.; Jansova, M.; Tromson, D.; Autermann, C.; Feld, L.; Karpinski, W.; Kiesel, K. M.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Rauch, M.; Schael, S.; Schomakers, C.; Schulz, J.; Schwering, G.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Pooth, O.; Stahl, A.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garay Garcia, J.; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schuetze, P.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Lapsien, T.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Caselle, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmayer, A.; Kudella, S.; Muller, Th.; Simonis, H. J.; Steck, P.; Weber, M.; Weiler, Th.; Anagnostou, G.; Asenov, P.; Assiouras, P.; Daskalakis, G.; Kyriakis, A.; Loukas, D.; Paspalaki, L.; Siklér, F.; Veszprémi, V.; Bhardwaj, A.; Dalal, R.; Jain, G.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; Creanza, D.; De Palma, M.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Silvestris, L.; Maggi, G.; Martiradonna, S.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Saizu, M. A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Latino, G.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Scarlini, E.; Sguazzoni, G.; Strom, D.; Viliani, L.; Ferro, F.; Lo Vetere, M.; Robutti, E.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Riceputi, E.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Magazzu, G.; Martini, L.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Bellan, R.; Costa, M.; Covarelli, R.; Da Rocha Rolo, M.; Demaria, N.; Rivetti, A.; Dellacasa, G.; Mazza, G.; Migliore, E.; Monteil, E.; Pacher, L.; Ravera, F.; Solano, A.; Fernandez, M.; Gomez, G.; Jaramillo Echeverria, R.; Moya, D.; Gonzalez Sanchez, F. J.; Vila, I.; Virto, A. L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Bonnaud, J.; Caratelli, A.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Auria, A.; Detraz, S.; Deyrail, D.; Dondelewski, O.; Faccio, F.; Frank, N.; Gadek, T.; Gill, K.; Honma, A.; Hugo, G.; Jara Casas, L. M.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Krammer, M.; Lenoir, P.; Mannelli, M.; Marchioro, A.; Marconi, S.; Mersi, S.; Martina, S.; Michelis, S.; Moll, M.; Onnela, A.; Orfanelli, S.; Pavis, S.; Peisert, A.; Pernot, J.-F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.-C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; Seif El Nasr-Storey, S.; Cole, J.; Hoad, C.; Hobson, P.; Morton, A.; Reid, I. D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Hall, G.; James, T.; Magnan, A.-M.; Pesaresi, M.; Raymond, D. M.; Uchida, K.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B. R.; Gerosa, R.; Sharma, V.; Vartak, A.; Yagil, A.; Zevi Della Porta, G.; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; Mullin, S.; Patterson, A.; Qu, H.; White, D.; Dominguez, A.; Bartek, R.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J. N.; Canepa, A.; Cheung, H. W. K.; Chramowicz, J.; Christian, D.; Cooper, W. E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Lei, C. M.; Lipton, R.; Lopes De Sá, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D. R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Evdokimov, O.; Gerber, C. E.; Hofman, D. J.; Makauda, S.; Mills, C.; Sandoval Gonzalez, I. D.; Alimena, J.; Antonelli, L. J.; Francis, B.; Hart, A.; Hill, C. S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D. H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Monroy, J.; Siado, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Ramirez Vargas, J. E.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K. M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Covarelli, R.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K. A.

    2017-06-01

    The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at the CMS experiment. Based on these results, the collaboration has chosen to use n-in-p type silicon sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  1. About the Nature of Electroluminescence Centers in Plastically Deformed Crystals of p-type Silicon

    Directory of Open Access Journals (Sweden)

    B.V. Pavlyk

    2015-10-01

    Full Text Available The paper describes research of dislocation electroluminescence of single crystal p-type silicon with a high concentration of dislocations on the surface (111. It is shown the reaction of the luminescence spectra and capacitive-modulation spectra of samples after high-temperature annealing in an atmosphere of flowing oxygen. The analysis of the results lets us to establish the nature of recombination centers and their reorganization under high-temperature annealing. It is shown that deposition of Al film on the substrate p-Si leads to the formation of strain capacity and the localization of defects in the surface layer that corresponds to luminescence centers.

  2. Elastic constants determined by nanoindentation for p-type thermoelectric half-Heusler

    Energy Technology Data Exchange (ETDEWEB)

    Gahlawat, S.; Wheeler, L.; White, K. W., E-mail: zren@uh.edu, E-mail: kwwhite@uh.edu [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); He, R.; Chen, S.; Ren, Z. F., E-mail: zren@uh.edu, E-mail: kwwhite@uh.edu [Department of Physics and TcSUH, University of Houston, Houston, Texas 77204 (United States)

    2014-08-28

    This paper presents a study of the elastic properties of the p-type thermoelectric half-Heusler material, Hf{sub 0.44}Zr{sub 0.44}Ti{sub 0.12}CoSb{sub 0.8}Sn{sub 0.2}, using nanoindentation. Large grain-sized polycrystalline specimens were fabricated for these measurements, providing sufficient indentation targets within single grains. Electron Backscatter Diffraction methods indexed the target grains for the correlation needed for our elastic analysis of individual single crystals for this cubic thermoelectric material. Elastic properties, including the Zener ratio and the Poisson ratio, obtained from the elasticity tensor are also reported.

  3. Ferromagnetic-resonance induced electromotive forces in Ni81Fe19 | p-type diamond

    Science.gov (United States)

    Fukui, Naoki; Morishita, Hiroki; Kobayashi, Satoshi; Miwa, Shinji; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-10-01

    We report on direct-current (DC) electromotive forces (emfs) in a nickel-iron alloy (Ni81 Fe19) | p-type diamond under the ferromagnetic resonance of the Ni81Fe19 layer at room temperature. The observed DC emfs take its maximum around the ferromagnetic resonant frequency of the Ni81Fe19, and their signs are reversed by reversing the direction of an externally-applied magnetic field; it shows that the observed DC emfs are spin-related emfs.

  4. Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.S.; Aslam, D.M. [Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical Engineering

    1996-05-01

    Heat generation and temperature sensing are required for heating applications and for liquid level sensors, mass flow meters, and vacuum and pressure gauges which are based on variations of heat dissipation. Heat generation and temperature sensing are reported in a single p-type diamond resistor fabricated on an oxidized Si substrate using diamond film technology compatible with integrated circuit (IC) processing. Power densities in excess of 600 W/in.{sup 2} are observed for the heaters. The temperature response of the sensor is characterized in the temperature range of 300--725 K. Such a diamond heater/sensor device is reported for the first time.

  5. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Directory of Open Access Journals (Sweden)

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  6. Methods for enhancing P-type doping in III-V semiconductor films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  7. P-Type Doping of GaN by Mg+ Implantation

    Institute of Scientific and Technical Information of China (English)

    YAO Shu-De; ZHAO Qiang; ZHOU Sheng-Qiang; YANG Zi-Jian; LU Yi-Hong; SUN Chang-Chun; SUN Chang; ZHANG Guo-Yi; VANTOMME Andre; PIPELEERS Bert

    2003-01-01

    Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectrometry before (xmin = 1.6%) and after implantation (Xmin = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.

  8. Transient expression of P-type ATPases in tobacco epidermal cells

    DEFF Research Database (Denmark)

    Pedas, Lisbeth Rosager; Palmgren, Michael Broberg; Lopez Marques, Rosa Laura

    2016-01-01

    Transient expression in tobacco cells is a convenient method for several purposes such as analysis of protein-protein interactions and the subcellular localization of plant proteins. A suspension of Agrobacterium tumefaciens cells carrying the plasmid of interest is injected into the intracellular...... for example protein-protein interaction studies. In this chapter, we describe the procedure to transiently express P-type ATPases in tobacco epidermal cells, with focus on subcellular localization of the protein complexes formed by P4-ATPases and their β-subunits....

  9. Above bandgap luminescence of p-type GaAs epitaxial layers

    Science.gov (United States)

    Sapriel, J.; Chavignon, J.; Alexandre, F.; Azoulay, R.; Sermage, B.; Rao, K.; Voos, M.

    1991-08-01

    New photoluminescence bands are observed in p-type GaAs epitaxial layers at 300 and 80 K, above the bandgap. These bands are independent of the nature of the dopant (Zn, Be, C) and of the growth technique (MBE or MOCVD). Their intensities increase as a function of the p doping (1 × 10 17 < p < 2 × 10 20cm-3) and peak at energies which correspond to transitions between the Γ 6, L 6 and X 6 minima of the conduction band and the Γ 8 and Γ 7 maxima of the valence band.

  10. Schottky contacts to In2O3

    Directory of Open Access Journals (Sweden)

    H. von Wenckstern

    2014-04-01

    Full Text Available n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

  11. A P-type ATPase importer that discriminates between essential and toxic transition metals.

    Science.gov (United States)

    Lewinson, Oded; Lee, Allen T; Rees, Douglas C

    2009-03-24

    Transition metals, although being essential cofactors in many physiological processes, are toxic at elevated concentrations. Among the membrane-embedded transport proteins that maintain appropriate intracellular levels of transition metals are ATP-driven pumps belonging to the P-type ATPase superfamily. These metal transporters may be differentiated according to their substrate specificities, where the majority of pumps can extrude either silver and copper or zinc, cadmium, and lead. In the present report, we have established the substrate specificities of nine previously uncharacterized prokaryotic transition-metal P-type ATPases. We find that all of the newly identified exporters indeed fall into one of the two above-mentioned categories. In addition to these exporters, one importer, Pseudomonas aeruginosa Q9I147, was also identified. This protein, designated HmtA (heavy metal transporter A), exhibited a different substrate recognition profile from the exporters. In vivo metal susceptibility assays, intracellular metal measurements, and transport experiments all suggest that HmtA mediates the uptake of copper and zinc but not of silver, mercury, or cadmium. The substrate selectivity of this importer ensures the high-affinity uptake of essential metals, while avoiding intracellular contamination by their toxic counterparts.

  12. Analysis of carrier concentration, lifetime, and electron mobility on p-type HgCdTe

    Science.gov (United States)

    Yoo, Sang Dong; Kwack, Kae Dal

    1998-03-01

    Minority carrier transport characteristics of vacancy-doped p-type HgCdTe such as carrier concentration, lifetime, and mobility are investigated. In the calculation of the carrier concentration two acceptor levels—a donor level and a trap level—were taken into account. The acceptor levels have been described by two models—two independent singly ionized levels and a divalent level with two ionization energies. When each model was examined by calculating electron mobility as a function of temperature, the latter was found to be more accurate. Electron mobility as a function of majority carrier concentration was also presented for both n-type and p-type HgCdTe with 0.225 Cd mole fraction. Steady state electron lifetime was computed assuming the acceptor levels and the trap level would act as Schokley-Read-Hall type recombination centers. The calculated results using the divalent acceptor model were in good agreement with the experimental data.

  13. The development of p-type silicon detectors for the high radiation regions of the LHC

    CERN Document Server

    Hanlon, M D L

    1998-01-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

  14. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    Institute of Scientific and Technical Information of China (English)

    Li Shang-Sheng; Ma Hong-An; Li Xiao-Lei; Su Tai-Chao; Huang Guo-Feng; Li Yong; Jia Xiao-Peng

    2011-01-01

    High-quality p-type boron-doped II0b diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.

  15. EEG/MEG forward simulation through h- and p-type finite elements

    Energy Technology Data Exchange (ETDEWEB)

    Pursiainen, S [Institute of Mathematics, Box 1100, FI-02015 Helsinki University of Technology (Finland)], E-mail: sampsa.pursiainen@tkk.fi

    2008-07-15

    Electro/Magnetoencephalography (EEG/MEG) is a non-invasive imaging modality, in which a primary current density generated by the neural activity in the brain is to be reconstructed from external electric potential/magnetic field measurements. This work focuses on effective and accurate simulation of the EEG/MEG forward model through the h- and p-versions of the finite element method (h- and p-FEM). The goal is to compare the effectiveness of these two versions in forward simulation. Both h- and p-type forward simulations are described and implemented, and the technical solutions found are discussed. These include, for example, suitable ways to generate a finite element mesh for a real head geometry through the use of different element types. Performances of the two implemented forward simulation types are compared by measuring directly the forward modeling error, as well as by computing reconstructions through a regularized FOCUSS (FOCal Underdetermined System Solver) algorithm. The results obtained suggest that the p-type performs better in terms of the forward modeling error. However, both types perform well in regularized FOCUSS reconstruction.

  16. Wide band gap p-type windows by CBD and SILAR methods

    Energy Technology Data Exchange (ETDEWEB)

    Sankapal, B.R.; Goncalves, E.; Ennaoui, A.; Lux-Steiner, M.Ch

    2004-03-22

    Chemical deposition methods, namely, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 deg. C) in aqueous medium. Growth of these films requires the use of Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na{sub 2}S{sub 2}O{sub 3}. The anion sources are either KI as iodine or KSCN as thiocyanide ions for CuI and CuSCN films, respectively. The preparative parameters are optimized with the aim to use these p-type materials as windows for solar cells. Different substrates are used, namely: glass, fluorine doped tin oxide coated glass and CuInS{sub 2} (CIS). X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical absorption spectroscopy are used for structural, surface morphological and optical studies, and the results are discussed.

  17. Carrier induced local moment magnetization in p-type Sn1-xMnxTe

    Science.gov (United States)

    Behera, Sashi S.; Tripathi, Pratibha; Nayak, Sanjeev K.; Tripathi, Gouri S.

    2017-08-01

    We derive a theory of carrier induced local moment magnetization of p-type Sn1-xMnxTe based on the Hubbard model, k → · π → electronic structure method (k → is the electronic wave vector and π → is the relativistic momentum operator) and the statistical paramagnetic approach for the localized moments. The Hubbard model is used to derive an internal exchange magnetic field. The difference in exchange self-energy is expressed in terms of an internal exchange field that is proportional to the parameter U, the onsite Coulomb repulsion, and the spin-density of carriers. In the present theory, the k → · π → + U model is integrated with the statistical paramagnetic theory for localized spins, which is then solved in a self-consistent manner by adding the exchange field to the applied field. The technique is applied to study the magnetic properties of p-type Sn1-xMnxTe, an important material for spintronics devices. The local moment magnetization calculated using the total magnetic field self-consistently agrees with the experimental observations. Magnetization and the exchange field studied as functions of the applied field, temperature and carrier concentration yield results on expected lines. Ours is a mechanism that is different from the RKKY interaction, normally invoked for carrier induced ferromagnetism and is thus a novelty.

  18. Anabaena sp. DyP-type peroxidase is a tetramer consisting of two asymmetric dimers.

    Science.gov (United States)

    Yoshida, Toru; Ogola, Henry Joseph Oduor; Amano, Yoshimi; Hisabori, Toru; Ashida, Hiroyuki; Sawa, Yoshihiro; Tsuge, Hideaki; Sugano, Yasushi

    2016-01-01

    DyP-type peroxidases are a newly discovered family of heme peroxidases distributed from prokaryotes to eukaryotes. Recently, using a structure-based sequence alignment, we proposed the new classes, P, I and V, as substitutes for classes A, B, C, and D [Arch Biochem Biophys 2015;574:49-55]. Although many class V enzymes from eukaryotes have been characterized, only two from prokaryotes have been reported. Here, we show the crystal structure of one of these two enzymes, Anabaena sp. DyP-type peroxidase (AnaPX). AnaPX is tetramer formed from Cys224-Cys224 disulfide-linked dimers. The tetramer of wild-type AnaPX was stable at all salt concentrations tested. In contrast, the C224A mutant showed salt concentration-dependent oligomeric states: in 600 mM NaCl, it maintained a tetrameric structure, whereas in the absence of salt, it dissociated into monomers, leading to a reduction in thermostability. Although the tetramer exhibits non-crystallographic, 2-fold symmetry in the asymmetric unit, two subunits forming the Cys224-Cys224 disulfide-linked dimer are related by 165° rotation. This asymmetry creates an opening to cavities facing the inside of the tetramer, providing a pathway for hydrogen peroxide access. Finally, a phylogenetic analysis using structure-based sequence alignments showed that class V enzymes from prokaryotes, including AnaPX, are phylogenetically closely related to class V enzymes from eukaryotes.

  19. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Directory of Open Access Journals (Sweden)

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  20. Lateral photovoltaic effect in p-type silicon induced by surface states

    Science.gov (United States)

    Huang, Xu; Mei, Chunlian; Gan, Zhikai; Zhou, Peiqi; Wang, Hui

    2017-03-01

    A colossal lateral photovoltaic effect (LPE) was observed at the surface of p-type silicon, which differs from the conventional thought that a large LPE is only observed in Schottky junctions and PN junctions consisting of several layers with different conductivities. It shows a high sensitivity of 499.24 mV/mm and an ultra-broadband spectral responsivity (from 405 nm to 980 nm) at room temperature, which makes it an attractive candidate for near-infrared detection. We propose that this phenomenon can be understood by considering the surface band bending near the surface of p-Si induced by charged surface states. The energy band diagrams of the samples are shown based on X-ray photoelectron spectroscopy suggesting the correlation between the LPE and surface band bending. The conjectures are validated by changing the surface states of p-type silicon using Ni nano-films. These findings reveal a generation mechanism of the LPE and may lead to p-Si based, broadband-responsivity, low-cost, and high-precision optical and optoelectronic applications.

  1. Atomic layer deposition of undoped TiO2 exhibiting p-type conductivity.

    Science.gov (United States)

    Iancu, Andrei T; Logar, Manca; Park, Joonsuk; Prinz, Fritz B

    2015-03-11

    With prominent photocatalytic applications and widespread use in semiconductor devices, TiO2 is one of the most popular metal oxides. However, despite its popularity, it has yet to achieve its full potential due to a lack of effective methods for achieving p-type conductivity. Here, we show that undoped p-type TiO2 films can be fabricated by atomic layer deposition (ALD) and that their electrical properties can be controlled across a wide range using proper postprocessing anneals in various ambient environments. Hole mobilities larger than 400 cm(2)/(V·s) are accessible superseding the use of extrinsic doping, which generally produces orders of magnitude smaller values. Through a combination of analyses and experiments, we provide evidence that this behavior is primarily due to an excess of oxygen in the films. This discovery enables entirely new categories of TiO2 devices and applications, and unlocks the potential to improve existing ones. TiO2 homojunction diodes fabricated completely by ALD are developed as a demonstration of the utility of these techniques and shown to exhibit useful rectifying characteristics even with minimal processing refinement.

  2. Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films.

    Science.gov (United States)

    Hu, Youfan; Zhang, Yan; Lin, Long; Ding, Yong; Zhu, Guang; Wang, Zhong Lin

    2012-07-11

    We present that the electroluminescence (EL) properties of Mg-doped p-type GaN thin films can be tuned by the piezo-phototronic effect via adjusting the minority carrier injection efficiency at the metal-semiconductor (M-S) interface by strain induced polarization charges. The device is a metal-semiconductor-metal structure of indium tin oxide (ITO)-GaN-ITO. Under different straining conditions, the changing trend of the transport properties of GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observed for the integral EL intensity under certain applied strain due to the adjusted minority carrier injection efficiency by piezoelectric charges introduced at the M-S interface. The external quantum efficiency of the blue EL at 430 nm was changed by 5.84% under different straining conditions, which is 1 order of magnitude larger than the change of the green peak at 540 nm. The results indicate that the piezo-phototronic effect has a larger impact on the shallow acceptor states related EL process than on the one related to the deep acceptor states in p-type GaN films. This study has great significance on the practical applications of GaN in optoelectronic devices under a working environment where mechanical deformation is unavoidable such as for flexible/printable light emitting diodes.

  3. New photovoltaic devices based on the sensitization of p-type semiconductors: challenges and opportunities.

    Science.gov (United States)

    Odobel, Fabrice; Le Pleux, Loïc; Pellegrin, Yann; Blart, Errol

    2010-08-17

    Because solar energy is the most abundant renewable energy resource, the clear connection between human activity and global warming has strengthened the interest in photovoltaic science. Dye-sensitized solar cells (DSSCs) provide a promising low-cost technology for harnessing this energy source. Until recently, much of the research surrounding DSSCs had been focused on the sensitization of n-type semiconductors, such as titanium dioxide (Gratzel cells). In an n-type dye-sensitized solar cell (n-DSSC), an electron is injected into the conduction band of an n-type semiconductor (n-SC) from the excited state of the sensitizer. Comparatively few studies have examined the sensitization of wide bandgap p-type semiconductors. In a p-type DSSC (p-DSSC), the photoexcited sensitizer is reductively quenched by hole injection into the valence band of a p-type semiconductor (p-SC). The study of p-DSSCs is important both to understand the factors that control the rate of hole photoinjection and to aid the rational design of efficient p-DSSCs. In theory, p-DSSCs should be able to work as efficiently as n-DSSCs. In addition, this research provides a method for preparing tandem DSSCs consisting of a TiO(2)-photosensitized anode and a photosensitized p-type SC as a cathode. Tandem DSSCs are particularly important because they represent low-cost photovoltaic devices whose photoconversion efficiencies could exceed 15%. This Account describes recent research results on p-DSSCs. Because these photoelectrochemical devices are the mirror images of conventional n-DSSCs, they share some structural similarities, but they use different materials and have different charge transfer kinetics. In this technology, nickel oxide is the predominant p-SC material used, but much higher photoconversion efficiencies could be achieved with new p-SCs materials with deeper valence band potential. Currently, iodide/triiodide is the main redox mediator of electron transport within these devices, but we expect

  4. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    Science.gov (United States)

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  5. p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

    Science.gov (United States)

    Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

    2015-08-05

    Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

  6. Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

    Science.gov (United States)

    Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

    2017-03-17

    We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

  7. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-07-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs.

  8. Self-organized helical equilibria as a new paradigm for ohmically heated fusion plasmas

    Science.gov (United States)

    Lorenzini, R.; Martines, E.; Piovesan, P.; Terranova, D.; Zanca, P.; Zuin, M.; Alfier, A.; Bonfiglio, D.; Bonomo, F.; Canton, A.; Cappello, S.; Carraro, L.; Cavazzana, R.; Escande, D. F.; Fassina, A.; Franz, P.; Gobbin, M.; Innocente, P.; Marrelli, L.; Pasqualotto, R.; Puiatti, M. E.; Spolaore, M.; Valisa, M.; Vianello, N.; Martin, P.; Martin, P.; Apolloni, L.; Puiatti, M. E.; Adamek, J.; Agostini, M.; Alfier, A.; Annibaldi, S. V.; Antoni, V.; Auriemma, F.; Barana, O.; Baruzzo, M.; Bettini, P.; Bolzonella, T.; Bonfiglio, D.; Bonomo, F.; Brombin, M.; Brotankova, J.; Buffa, A.; Buratti, P.; Canton, A.; Cappello, S.; Carraro, L.; Cavazzana, R.; Cavinato, M.; Chapman, B. E.; Chitarin, G.; Dal Bello, S.; de Lorenzi, A.; de Masi, G.; Escande, D. F.; Fassina, A.; Ferro, A.; Franz, P.; Gaio, E.; Gazza, E.; Giudicotti, L.; Gnesotto, F.; Gobbin, M.; Grando, L.; Guazzotto, L.; Guo, S. C.; Igochine, V.; Innocente, P.; Liu, Y. Q.; Lorenzini, R.; Luchetta, A.; Manduchi, G.; Marchiori, G.; Marcuzzi, D.; Marrelli, L.; Martini, S.; Martines, E.; McCollam, K.; Milani, F.; Moresco, M.; Novello, L.; Ortolani, S.; Paccagnella, R.; Pasqualotto, R.; Peruzzo, S.; Piovan, R.; Piovesan, P.; Piron, L.; Pizzimenti, A.; Pomaro, N.; Predebon, I.; Reusch, J. A.; Rostagni, G.; Rubinacci, G.; Sarff, J. S.; Sattin, F.; Scarin, P.; Serianni, G.; Sonato, P.; Spada, E.; Soppelsa, A.; Spagnolo, S.; Spolaore, M.; Spizzo, G.; Taliercio, C.; Terranova, D.; Toigo, V.; Valisa, M.; Vianello, N.; Villone, F.; White, R. B.; Yadikin, D.; Zaccaria, P.; Zamengo, A.; Zanca, P.; Zaniol, B.; Zanotto, L.; Zilli, E.; Zohm, H.; Zuin, M.

    2009-08-01

    In the quest for new energy sources, the research on controlled thermonuclear fusion has been boosted by the start of the construction phase of the International Thermonuclear Experimental Reactor (ITER). ITER is based on the tokamak magnetic configuration, which is the best performing one in terms of energy confinement. Alternative concepts are however actively researched, which in the long term could be considered for a second generation of reactors. Here, we show results concerning one of these configurations, the reversed-field pinch (RFP). By increasing the plasma current, a spontaneous transition to a helical equilibrium occurs, with a change of magnetic topology. Partially conserved magnetic flux surfaces emerge within residual magnetic chaos, resulting in the onset of a transport barrier. This is a structural change and sheds new light on the potential of the RFP as the basis for a low-magnetic-field ohmic fusion reactor.

  9. Residence time distribution (RTD) of particulate foods in a continuous flow pilot-scale ohmic heater.

    Science.gov (United States)

    Sarang, Sanjay; Heskitt, Brian; Tulsiyan, Priyank; Sastry, Sudhir K

    2009-08-01

    The residence time distribution (RTD) of a model particulate-fluid mixture (potato in starch solution) in the ohmic heater in a continuous sterilization process was measured using a radio frequency identification (RFID) methodology. The effect of solid concentration and the rotational speed of the agitators on the RTD were studied. The velocity of the fastest particle was 1.62 times the mean product velocity. In general, particle velocity was found to be greater than the product bulk average velocity. Mean particle residence time (MPRT) increased with an increase in the rotational speed of the agitators (P < 0.05), and no particular trend was observed between the MPRT and the solid concentration. The distribution curves E (theta) were skewed to the right suggesting slow moving zones in the system.

  10. Entanglement dynamics of a two-qubit system coupled individually to Ohmic baths

    CERN Document Server

    Duan, Liwei; Chen, Qinghu; Zhao, Yang

    2013-01-01

    The Davydov D1 ansatz, which assigns an individual bosonic trajectory to each spin state, is an efficient, yet accurate trial state for time-dependent variation of the the spin-boson model [J. Chem. Phys. 138, 084111 (2013)]. In this work, the Dirac-Frenkel time-dependent variational procedure utilizing the Davydov D1 ansatz is implemented to study entanglement dynamics of two qubits under the influence of two independent baths. The Ohmic spectral density is used without the Born-Markov approximation or the rotating-wave approximation. In the strong coupling regime the entanglement sudden death is always found to exist, while at the intermediate coupling regime, the entanglement dynamics calculated by Davydov D1 ansatz displays oscillatory behavior in addition to entanglement sudden death and revival.

  11. Exchanging Ohmic Losses in Metamaterial Absorbers with Useful Optical Absorption for Photovoltaics

    CERN Document Server

    Vora, Ankit; Pala, Nezih; Kulkarni, Anand; Pearce, Joshua M; Güney, Durdu Ö

    2014-01-01

    Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorbance in the active semiconductors. Thus, Ohmic loss dominated metamaterial absorbers can be converted into photovoltaic near-perfect absorbers with the advantage of harvesting the full potential of light management offered by the metamaterial absorbers. Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-95% absorbance can be achieved in the semiconductor layers of the converted metamaterial absorbers. Besides other metamaterial and plasmonic devices, our results may also apply to photodectors and other metal or semiconductor based optical devices where resistive losses and p...

  12. Analytic representations of bath correlation functions for ohmic and superohmic spectral densities using simple poles

    Science.gov (United States)

    Ritschel, Gerhard; Eisfeld, Alexander

    2014-09-01

    We present a scheme to express a bath correlation function (BCF) corresponding to a given spectral density (SD) as a sum of damped harmonic oscillations. Such a representation is needed, for example, in many open quantum system approaches. To this end we introduce a class of fit functions that enables us to model ohmic as well as superohmic behavior. We show that these functions allow for an analytic calculation of the BCF using pole expansions of the temperature dependent hyperbolic cotangent. We demonstrate how to use these functions to fit spectral densities exemplarily for cases encountered in the description of photosynthetic light harvesting complexes. Finally, we compare absorption spectra obtained for different fits with exact spectra and show that it is crucial to take properly into account the behavior at small frequencies when fitting a given SD.

  13. Evolution of the electron temperature profile of ohmically heated plasmas in TFTR

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, G.; Efthimion, P.C.; Arunasalam, V.; Goldston, R.J.; Grek, B.; Hill, K.W.; Johnson, D.W.; McGuire, K.; Ramsey, A.T.; Stauffer, F.J.

    1985-08-01

    Blackbody electron cyclotron emission was used to ascertain and study the evolution and behavior of the electron temperature profile in ohmically heated plasmas in the Tokamak Fusion Test Reactor (TFTR). The emission was measured with absolutely calibrated millimeter wavelength radiometers. The temperature profile normalized to the central temperature and minor radius is observed to broaden substantially with decreasing limiter safety factor q/sub a/, and is insensitive to the plasma minor radius. Sawtooth activity was seen in the core of most TFTR discharges and appeared to be associated with a flattening of the electron temperature profile within the plasma core where q less than or equal to 1. Two types of sawtooth behavior were identified in large TFTR plasmas (minor radius, a less than or equal to 0.8 m) : a typically 35 to 40 msec period ''normal'' sawtooth, and a ''compound'' sawtooth with 70 to 80 msec period.

  14. A Dip Structure in the Intrinsic Toroidal Rotation Near the Edge of the Ohmic Plasmas in EAST

    DEFF Research Database (Denmark)

    Xu, Guosheng; Naulin, Volker; Wan, Baonian

    2011-01-01

    Ion's toroidal velocity, vt, in both the outermost 4 cm of the confined region and the scrap-off layer of Ohmic L-mode plasmas in EAST was measured using Mach probes. At about 1 cm inside the separatrix a local minimum in vt was observed, from which a cocurrent rotation increased both inwards...

  15. Development of iron-rich whey protein hydrogels following application of ohmic heating - Effects of moderate electric fields.

    Science.gov (United States)

    Pereira, Ricardo N; Rodrigues, Rui M; Altinok, Emir; Ramos, Óscar L; Xavier Malcata, F; Maresca, Paola; Ferrari, Giovanna; Teixeira, José A; Vicente, António A

    2017-09-01

    The influence that ohmic heating technology and its associated moderate electric fields (MEF) have upon production of whey protein isolate cold-set gels mediated by iron addition was investigated. Results have shown that combining heating treatments (90°C, 5min) with different MEF intensities let hydrogels with distinctive micro and macro properties - i.e. particle size distribution, physical stability, rheological behavior and microstructure. Resulting hydrogels were characterized (at nano-scale) by an intensity-weighted mean particle diameter of 145nm, a volume mean of 240nm. Optimal conditions for production of stable whey protein gels were attained when ohmic heating treatment at a MEF of 3V∙cm(-1) was combined with a cold gelation step using 33mmol∙L(-1) of Fe(2+). The consistency index of hydrogels correlated negatively to MEF intensity, but a shear thickening behavior was observed when MEF intensity was increased up to 10V∙cm(-1). According to transmission electron microscopy, ohmic heating gave rise to a more homogenous and compact fine-stranded whey protein-iron microstructure. Ohmic heating appears to be a promising technique, suitable to tailor properties of whey protein gels and with potential for development of innovative functional foods. Copyright © 2017 Elsevier Ltd. All rights reserved.

  16. Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

    Science.gov (United States)

    Turp, Gulen Yildiz; Icier, Filiz; Kor, Gamze

    2016-04-01

    The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating.

  17. Improvement of metal-semiconductor contact on silicon microstructured surface by electroless nickel technique

    Science.gov (United States)

    Long, Fei; Guo, Anran; Huang, Lieyun; Yu, Feng; Li, Wei

    2016-11-01

    Si micro-structures served as anti-reflection layer are widely employed in Si-based solar cells and detectors to enhance light harvesting. However, performance of these devices is suffered from the poor contact between the metal electrode and micro-structured surface. Conventional vacuum deposited metal electrode makes only superficial contact with the top of micro-structured surface and unable to fill the holes in the micro-structures. In this paper, instead, electroless nickel technique is applied to form low resistance ohmic contact. The surface micro-structures were fabricated by electrochemistry etching while the metal electrodes were deposited by sputtering and electroless pasting. Results show that only electroless nickel layer could fully fill the holes and achieve better ohmic contact than the sputtering ones before rapid annealing. Furthermore, a higher temperature rapid annealing process could improve the contact of all samples prepared by different ways. The specific contact resistance achieved by high alkalinity (pH=12) electroless nickel is 1.34×10-1Ω·cm2.

  18. Lipstick Induced Contact Leucoderma

    OpenAIRE

    Gupta Lalit Kumar; Jain Suresh Kumar; Khare Ashok Kumar

    2001-01-01

    Lipstick is a commonly used cosmetic. Its use may sometimes lead to contact dermatitis. Contact leucoderma to lipsticks however, is not common. We report a patient developing contact leucoderma to lipstick in association with contact dermatitis.

  19. Lipstick Induced Contact Leucoderma

    Directory of Open Access Journals (Sweden)

    Gupta Lalit Kumar

    2001-01-01

    Full Text Available Lipstick is a commonly used cosmetic. Its use may sometimes lead to contact dermatitis. Contact leucoderma to lipsticks however, is not common. We report a patient developing contact leucoderma to lipstick in association with contact dermatitis.

  20. Initial Thomson Scattering Survey of Local Helicity Injection and Ohmic Plasmas at the Pegasus Toroidal Experiment

    Science.gov (United States)

    Schlossberg, D. J.; Bodner, G. M.; Bongard, M. W.; Fonck, R. J.; Winz, G. R.

    2014-10-01

    A multipoint Thomson scattering diagnostic has recently been installed on the Pegasus ST. The system utilizes a frequency-doubled Nd:YAG laser (λ0 ~ 532 nm), spectrometers with volume phase holographic gratings, and a gated, intensified CCD camera. It provides measurements of Te and ne at 8 spatial locations for each spectrometer once per discharge. A new multiple aperture and beam dump system has been implemented to mitigate interference from stray light. This system has provided initial measurements in the core region of plasmas initiated by local helicity injection (LHI), as well as conventional Ohmic L- and H-mode discharges. Multi-shot averages of low-density (ne ~ 3 ×1018 m-3) , Ip ~ 0 . 1 MA LHI discharges show central Te ~ 75 eV at the end of the helicity injection phase. Ip ~ 0 . 13 MA Ohmic plasmas at moderate densities (ne ~ 2 ×1019 m-3) have core Te ~ 150 eV in L-mode. Generally, these plasmas do not reach transport equilibrium in the short 25 ms pulse length available. After an L-H transition, strong spectral broadening indicates increasing Te, to values above the range of the present spectrometer system with a high-dispersion VPH grating. Near-term system upgrades will focus on deploying a second spectrometer, with a lower-dispersion grating capable of measuring the 0.1-1.0 keV range. The second spectrometer system will also increase the available number of spatial channels, enabling study of H-mode pedestal structure. Work supported by US DOE Grant DE-FG02-96ER54375.

  1. Monitoring six-phase ohmic heating of contaminated soils using electrical resistance tomography

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, A.L.; Daily, W.D.

    1994-09-01

    Electrical resistance tomography (ERT) was used to monitor six-phase ohmic heating used for the insitu remediation of volatile organic compounds from subsurface water and soil at the Savannah River Site, near Aiken, South Carolina. The changes in electrical conductivity caused by six-phase ohmic-heating in a clay layer located in the vadose zone were monitored during a period of approximately 2 months, before, during and after heating. From an array of electrodes located in 4 boreholes, we collected electrical resistivity data between five pairs of adjacent holes pairs. This data was used to calculate tomographs which showed the electrical conductivity changes along five vertical planes. The difference tomographs show the combined effects of moisture redistribution and heating caused by six-phase heating and vapor extraction. The tomographs show that most of the clay layer increased in electrical conductivity during the first 3 weeks of the 4 week long heating phase. At this time, the electrical conductivities near the center of the heating array were twice as large as the pre-heat conductivities. Then the electrical conductivity started to decrease for portions of the clay layer closest to the vapor extraction well. We propose that the conductivity decreases are due to the removal of moisture by the heating and vacuum extraction. Parts of the clay layer near the extraction well reached electrical conductivities as low as 40% of the pre-heating values. We propose that these regions of lower than ambient electrical conductivities are indicators of regions where the vapor removal by vacuum extraction was most effective. At the end of the heating phase, our estimates suggest that the clay saturation may have dropped to as low as 10% based on the observed conductivity changes.

  2. NbFeSb based p-type half-Heusler for power generation applications

    Science.gov (United States)

    Joshi, Giri; He, Ran; Engber, Michael; Samsonidze, Georgy; Pantha, Tej; Dahal, Ekraj; Dahal, Keshab; Yang, Jian; Lan, Yucheng; Kozinsky, Boris; Ren, Zhifeng

    2015-03-01

    We report a peak dimensionless figure-of-merit (ZT) of ~1 at 700 oC in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25% in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications. DOE:DE-EE0004840.

  3. CuS p- type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application

    Science.gov (United States)

    Sabah, Fayroz A.; Ahmed, Naser M.; Hassan, Z.; Rasheed, Hiba S.; Azzez, Shrook A.; Al-Hazim, Nabeel Z.

    2016-07-01

    The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl2.2H2O as a source of Cu2+ and sodium thiosulfate Na2S2O3.5H2O as a source of and S2-. Two concentrations (0.2 and 0.4 M) were used for each CuCl2 and Na2S2O3 to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu2S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.

  4. CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application

    Energy Technology Data Exchange (ETDEWEB)

    Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad (Iraq); Ahmed, Naser M., E-mail: naser@usm.my; Hassan, Z., E-mail: zai@usm.my; Azzez, Shrook A. [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, College of Education, Al-Mustansiriya University, Baghdad (Iraq); Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Ministry of Education, the General Directorate for Educational Anbar (Iraq)

    2016-07-06

    The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.

  5. Role of Contact and Contact Mo dification on Photo-resp onse in a Charge Transfer Complex Single Nanowire Device

    Institute of Scientific and Technical Information of China (English)

    Rabaya Basori∗; A. K. Raychaudhuri

    2014-01-01

    We investigated the feasibility of obtaining large photoresponse in metal-semiconductor-metal (MSM) type single nanowire device where one contact can be blocking type. We showed that suitable modifi-cation of the blocking contact by deposition of a capping metal using focused electron beam (FEB) can lead to considerable enhancement of the photoresponse. The work was done in a single Cu:TCNQ nanowire device fabricated by direct growth of nanowires (NW) from pre-patterned Cu electrode which makes the contact ohmic with the other contact made from Au. Analysis of the data shows that the large photoresponse of the devices arises predominantly due to reduction of the barriers at the Au/NW blocking contact on illumination. This is caused by the diffusion of the photo generated carriers from the nanowires to the contact region. When the barrier height is further reduced by treating the contact with FEB deposited Pt, this results in a large enhancement in the device photoresponse.

  6. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Science.gov (United States)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-04-01

    More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm2 V-1 s-1, which is much higher than that of MoS2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  7. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Science.gov (United States)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  8. How thermoelectric properties of p-type Tl-filled skutterudites are improved

    Directory of Open Access Journals (Sweden)

    Donghun Kim

    2013-09-01

    Full Text Available The high-temperature thermoelectric properties of p-type Tl-filled skutterudites TlxFe1Co3Sb12 (x = 0, 0.2, 0.4, 0.6, and 0.8 were examined. While samples with x ≤ 0.4 were single-phase Tl-filled skutterudite, samples with x = 0.6 and 0.8 were composed of two phases: TlxFe1Co3Sb12 (x ≈ 0.4 as the matrix phase and a Tl-Fe-Sb ternary alloy. The thermal conductivity (κ was reduced effectively by Tl addition, but the secondary phase increased κ slightly. The maximum value of the dimensionless figure of merit ZT (=S2T/ρ/κ, where T is the absolute temperature was 0.36 at 723 K for Tl0.2Fe1Co3Sb12.

  9. P-type calcium channels are blocked by the alkaloid daurisoline.

    Science.gov (United States)

    Lu, Y M; Fröstl, W; Dreessen, J; Knöpfel, T

    1994-07-21

    IN looking for a structurally defined non-peptide P-channel blocker we have tested the alkaloid daurisoline which has been isolated from traditional Chinese medicinal herb (Menispermum dauricum) used for the treatment of epilepsy, hypertension and asthma. We have found that daurisoline is an inhibitor of omega-Aga-IVA sensitive barium currents in cerebellar Purkinje cells and of excitatory postsynaptic potentials evoked in Purkinje cells by stimulating parallel fibres in acutely prepared cerebellar slices. Daurisoline did not significantly affect omega-Aga-IVA-insensitive barium currents recorded from granule cells freshly isolated from rat cerebellum. Daurisoline passes the blood-brain barrier and will, therefore, facilitate the functional characterization of brain calcium channels as well as the exploration of P-type calcium channels as possible drug targets.

  10. A re-examination of cobalt-related defects in n- and p-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Scheffler, Leopold; Kolkovsky, Vladimir; Weber, Joerg [Technische Universitaet Dresden, 01069 Dresden (Germany)

    2012-10-15

    In the present work cobalt-doped n- and p-type silicon samples were studied by means of deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS). We demonstrate that two dominant DLTS peaks previously assigned to a substitutional Co defect have different annealing behaviour and therefore belong to different defects. After wet chemical etching three other peaks (E90, E140 and H160) were observed in the samples. The intensity of the peaks becomes larger in the H-plasma treated samples. This together with depth profiling demonstrates that the peaks are hydrogen-related defects. The origin of the peaks will be discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

    KAUST Repository

    Hota, Mrinal Kanti

    2015-02-23

    Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.

  12. Improved thermoelectric efficiency in p-type ZnSb through Zn deficiency

    Science.gov (United States)

    Guo, Qilong; Luo, Sijun

    2015-12-01

    We herein report a feasible approach to improve the thermoelectric performance of p-type ZnSb compound by Zn content regulation. It is found that Zn vacancies formed by Zn deficiency not only efficiently enhance the electrical conductivity due to the improved hole concentration but also markedly lower the lattice thermal conductivity on account of the reinforced point defect scattering of phonons. The ZnSb compound with a nominal 3 mol.% Zn deficiency shows a maximum thermoelectric figure of merit ZT of 0.8 at 700 K which is a 60% improvement over the pristine sample. The strategies of further enhancing the performance of ZnSb-based material have been discussed.

  13. Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

    CERN Document Server

    Härkönen, J; Luukka, P; Kassamakov, I; Autioniemi, M; Tuominen, E; Sane, P; Pusa, P; Räisänen, J; Eremin, V; Verbitskaya, E; Li, Z

    2007-01-01

    n+/p−/p+ pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2×1015 n/cm2. In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 °C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10 ns were found in heavily (above 1×1015 neq/cm2) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140–180 K.

  14. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    Energy Technology Data Exchange (ETDEWEB)

    Aminorroaya Yamini, Sima, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu; Dou, Shi Xue [Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Mitchell, David R. G. [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Wang, Heng [Materials Science, California Institute of Technology, Pasadena, CA 91125 (United States); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125 (United States); Pei, Yanzhong [School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804 (China); Snyder, G. Jeffrey, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); ITMO University, Saint Petersburg (Russian Federation)

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  15. Microhardness of carbon-doped (111) p-type Czochralski silicon

    Science.gov (United States)

    Danyluk, S.; Lim, D. S.; Kalejs, J.

    1985-01-01

    The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

  16. Photostable p-type dye-sensitized photoelectrochemical cells for water reduction.

    Science.gov (United States)

    Ji, Zhiqiang; He, Mingfu; Huang, Zhongjie; Ozkan, Umit; Wu, Yiying

    2013-08-14

    A photostable p-type NiO photocathode based on a bifunctional cyclometalated ruthenium sensitizer and a cobaloxime catalyst has been created for visible-light-driven water reduction to produce H2. The sensitizer is anchored firmly on the surface of NiO, and the binding is resistant to the hydrolytic cleavage. The bifunctional sensitizer can also immobilize the water reduction catalyst. The resultant photoelectrode exhibits superior stability in aqueous solutions. Stable photocurrents have been observed over a period of hours. This finding is useful for addressing the degradation issue in dye-sensitized photoelectrochemical cells caused by desorption of dyes and catalysts. The high stability of our photocathodes should be important for the practical application of these devices for solar fuel production.

  17. Phonon bottleneck in p-type Ge/Si quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yakimov, A. I., E-mail: yakimov@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Kirienko, V. V.; Armbrister, V. A. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk (Russian Federation); Bloshkin, A. A.; Dvurechenskii, A. V. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation)

    2015-11-23

    We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.

  18. Improved performance of P-type DSCs with a compact blocking layer coated by different thicknesses

    Science.gov (United States)

    Ho, Phuong; Bao, Le Quoc; Cheruku, Rajesh; Kim, Jae Hong

    2016-09-01

    The introduction of different thicknesses of a compact NiO blocking layer coating with different spin speeds on FTO and followed by a coating of photoactive NiO electrode for p-type dye-sensitized solar cells ( p-DSCs). This study examined the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The DCBZ dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of photovoltaic performance and resulted from an increase in the power conversion efficiency ( η). The electrochemical impedance spectroscopy (EIS) measurement demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The results showed that the best p-DSC was achieved by employing 3000 rpm spin-coated process for different times of blocking layer.

  19. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  20. Nanopore formation on low-doped p-type silicon under illumination

    Energy Technology Data Exchange (ETDEWEB)

    Chiboub, N. [UDTS, 02 Bd. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16200 Algiers (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [UDTS, 02 Bd. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16200 Algiers (Algeria); Chazalviel, J.-N.; Ozanam, F. [Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau (France); Moulay, S. [Universite Saad Dahleby, B.P. 270, Route de Soumaa, Blida (Algeria); Manseri, A. [UDTS, 02 Bd. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16200 Algiers (Algeria)

    2010-04-01

    Porous silicon layers were elaborated by anodization of highly resistive p-type silicon in HF/ethylene glycol solution under front side illumination, as a function of etching time, HF concentration and illumination intensity. The porous layer morphology was investigated by scanning electron microscopy (SEM). The illumination during anodization was provided by a tungsten lamp or lasers of different wavelengths. Under anodization, a microporous layer is formed up to a critical thickness above which macropores appear. Under illumination, the instability limiting the growth of the microporous layer occurs at a critical thickness much larger than in the dark. This critical thickness depends on HF concentration, illumination wavelength and intensity. These non-trivial dependencies are rationalized in a model in which photochemical etching in the electrochemically formed porous layer plays the central role.

  1. Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon

    Science.gov (United States)

    Wolter, Sascha J.; Geisler, Dennis; Hensen, Jan; Köntges, Marc; Kajari-Schröder, Sarah; Bahnemann, Detlef W.; Brendel, Rolf

    2017-04-01

    Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.

  2. Membrane Anchoring and Ion-Entry Dynamics in P-type ATPase Copper Transport

    DEFF Research Database (Denmark)

    Grønberg, Christina; Sitsel, Oleg; Lindahl, Erik

    2016-01-01

    Cu(+)-specific P-type ATPase membrane protein transporters regulate cellular copper levels. The lack of crystal structures in Cu(+)-binding states has limited our understanding of how ion entry and binding are achieved. Here, we characterize the molecular basis of Cu(+) entry using molecular......-dynamics simulations, structural modeling, and in vitro and in vivo functional assays. Protein structural rearrangements resulting in the exposure of positive charges to bulk solvent rather than to lipid phosphates indicate a direct molecular role of the putative docking platform in Cu(+) delivery. Mutational analyses...... and simulations in the presence and absence of Cu(+) predict that the ion-entry path involves two ion-binding sites: one transient Met148-Cys382 site and one intramembranous site formed by trigonal coordination to Cys384, Asn689, and Met717. The results reconcile earlier biochemical and x-ray absorption data...

  3. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  4. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambade, Swapnil B. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Mane, R.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Kale, S.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Sonawane, S.H. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Shaikh, Arif V. [Department of Electronic Science, AKI' s Poona College of Arts, Science and Commerce, Camp, Pune 411 001 (India); Han, Sung-Hwan [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of)]. E-mail: shhan@hanyang.ac.kr

    2006-12-15

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 deg. C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu{sub 2-x}Se phase was confirmed by XRD pattern and spherical grains of 30 {+-} 4 - 40 {+-} 4 nm in size aggregated over about 130 {+-} 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm{sup 2} light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  5. Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yuan-Pai; Horng, Sheng-Fu [Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chao, Yu-Chiang; Meng, Hsin-Fei [Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Zan, Hsiao-Wen, E-mail: yuchiangchao@gmail.com, E-mail: meng@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2011-10-12

    In junction absorber photovoltaics doped wide bandgap n-type and p-type semiconductors form a porous interpenetrating junction structure with a layer of low bandgap absorber at the interface. The doping concentration is high enough such that the junction depletion width is smaller than the pore size. The highly conductive neutral region then has a dentrite shape with fingers reaching the absorber to effectively collect the photo-carriers swept out by the junction electric field. With doping of 10{sup 19} cm{sup -3} corresponding to a depletion width of 25 nm, pore size of 32 nm, absorber thickness close to exciton diffusion length of 17 nm, absorber bandgap of 1.4 eV and carrier mobility over 10{sup -5} cm{sup 2} V{sup -1} s{sup -1}, numerical calculation shows the power conversion efficiency is as high as 19.4%. It rises to 23% for a triplet exciton absorber.

  6. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

    Science.gov (United States)

    Bioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-10-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  7. InP nanowire p-type doping via Zinc indiffusion

    Science.gov (United States)

    Haggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars

    2016-10-01

    We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350-500 °C for 5-20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm-3 for NWs without post-annealing, and up to 1018 cm-3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

  8. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-01-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

  9. Luminescence properties of p-type thin CdS films prepared by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Ullrich, B. [Tokyo Univ. (Japan). Dept. of Physics; Ezumi, H. [Department of Electrical Engineering, Hiroshima-Denki Institute of Technology, Hiroshima 739-03 (Japan); Keitoku, S. [Hiroshima Women`s University, Hiroshima 734 (Japan); Kobayashi, T. [Tokyo Univ. (Japan). Dept. of Physics

    1995-12-01

    Investigations of the luminescence of p-type CdS:Cu thin (less than or equal to 2 {mu}m) films on glass substrate prepared by laser ablation were performed for the first time. The dependences of the luminescence on the Cu content in the thin films were studied at 300 K with argon laser lines at 457.9 nm, 488.0 nm and 514.5 nm. It is demonstrated that the luminescence excited with the 514.5 nm line corresponds to the donor-acceptor transition. Furthermore, it is shown that the intensity of the red emission of CdS:Cu films can be efficiently bleached by Cu doping. (orig.)

  10. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors.

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L; Hersam, Mark C; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  11. Asymptotics of the trap-dominated Gunn effect in p-type Ge

    Science.gov (United States)

    Bonilla, L. L.; Hernando, P. J.; Herrero, M. A.; Kindelan, M.; Velázquez, J. J. L.

    1997-09-01

    We present an asymptotic analysis of the Gunn effect in a drift-diffusion model - including electric-field-dependent generation-recombination processes - for long samples of strongly compensated p-type Ge at low temperature and under d.c. voltage bias. During each Gunn oscillation, there are different stages corresponding to the generation, motion and annihilation of solitary waves. Each stage may be described by one evolution equation for only one degree of freedom (the current density), except for the generation of each new wave. The wave generation is a faster process that may be described by solving a semiinfinite canonical problem. As a result of our study we have found that (depending on the boundary condition) one or several solitary waves may be shed during each period of the oscillation. Examples of numerical simulations validating our analysis are included.

  12. EDITORIAL: Close contact Close contact

    Science.gov (United States)

    Demming, Anna

    2010-07-01

    The development of scanning probe techniques, such as scanning tunnelling microscopy [1], has often been touted as the catalyst for the surge in activity and progress in nanoscale science and technology. Images of nanoscale structural detail have served as an invaluable investigative resource and continue to fascinate with the fantastical reality of an intricate nether world existing all around us, but hidden from view of the naked eye by a disparity in scale. As is so often the case, the invention of the scanning tunnelling microscope heralded far more than just a useful new apparatus, it demonstrated the scope for exploiting the subtleties of electronic contact. The shrinking of electronic devices has been a driving force for research into molecular electronics, in which an understanding of the nature of electronic contact at junctions is crucial. In response, the number of experimental techniques in molecular electronics has increased rapidly in recent years. Scanning tunnelling microscopes have been used to study electron transfer through molecular films on a conducting substrate, and the need to monitor the contact force of scanning tunnelling electrodes led to the use of atomic force microscopy probes coated in a conducting layer as studied by Cui and colleagues in Arizona [2]. In this issue a collaboration of researchers at Delft University and Leiden University in the Netherlands report a new device architecture for the independent mechanical and electrostatic tuning of nanoscale charge transport, which will enable thorough studies of molecular transport in the future [3]. Scanning probes can also be used to pattern surfaces, such as through spatially-localized Suzuki and Heck reactions in chemical scanning probe lithography. Mechanistic aspects of spatially confined Suzuki and Heck chemistry are also reported in this issue by researchers in Oxford [4]. All these developments in molecular electronics fabrication and characterization provide alternative

  13. Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

    Science.gov (United States)

    Sung, C.; White, A. E.; Mikkelsen, D. R.; Greenwald, M.; Holland, C.; Howard, N. T.; Churchill, R.; Theiler, C.

    2016-04-01

    Long wavelength turbulent electron temperature fluctuations (kyρs 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (kyρs ≲ 1.7) performed at r/a ˜ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the "Transport Shortfall" [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

  14. Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

    Energy Technology Data Exchange (ETDEWEB)

    Sung, C., E-mail: csung@physics.ucla.edu [University of California, Los Angeles, Los Angeles, California 90095 (United States); White, A. E.; Greenwald, M.; Howard, N. T. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Mikkelsen, D. R.; Churchill, R. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Holland, C. [University of California, San Diego, La Jolla, California 92093 (United States); Theiler, C. [Ecole Polytechnique Fédérale de Lausanne, SPC, Lausanne 1015 (Switzerland)

    2016-04-15

    Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

  15. Large area growth and electrical properties of p-type WSe2 atomic layers.

    Science.gov (United States)

    Zhou, Hailong; Wang, Chen; Shaw, Jonathan C; Cheng, Rui; Chen, Yu; Huang, Xiaoqing; Liu, Yuan; Weiss, Nathan O; Lin, Zhaoyang; Huang, Yu; Duan, Xiangfeng

    2015-01-14

    Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe(2) atomic layers remains a challenge. The studies on WSe(2) are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe(2) atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe(2) film with the lateral dimensions up to ∼ 1 cm(2). Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe(2). Electrical transport studies further show that the p-type WSe(2) field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm(2) V(-1) s(-1) for monolayer and up to 350 cm(2) V(-1) s(-1) for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe(2) and comparable to the best exfoliated materials.

  16. XPS study of the band alignment at ITO/oxide (n-type MoO{sub 3} or p-type NiO) interface

    Energy Technology Data Exchange (ETDEWEB)

    Bernede, J.C. [MOLTECH Anjou, UMR 6200, Universite de Nantes (France); Houari, S.; Khelil, A. [Universite d& #x27; Oran, LPCM2E, Oran Es-Senia (Algeria); Nguyen, D.; Jouan, P.Y.; Mokrani, A.; Cattin, L. [Institut J. Rouxel (IMN), UMR 6502, Universite de Nantes (France); Predeep, P. [Labaratory for Unconventional Electronics and Photonics, Department of Physics, National Institute of Technology, Kerala (India)

    2012-07-15

    While they have different electronic properties n-type MoO{sub 3} and p-type NiO are very efficient as buffer layers between the ITO anode and the organic electron donor in organic photovoltaic cells. While it is admitted that MoO{sub 3} is n-type, its band structure is still under study. Here, the band alignment at the interface of an ITO/MoO{sub 3} heterojunction is studied by X-ray photoelectron spectroscopy (XPS). The same study is realized on the structure ITO/NiO, NiO being a p-type semiconductor. The measurements have been performed on samples obtained under the same experimental conditions as those used to achieve organic photovoltaic cells. The MoO{sub 3} (NiO) upper layer was 3 nm thick. The semidirect XPS technique used to measure the band offsets allows us to estimate the band discontinuities at the interface ITO/MoO{sub 3}: {Delta}E{sub v} = 0.50 eV and {Delta}E{sub c} = 0.90 eV, while at the interface ITO/NiO we have {Delta}E{sub v} = -2.10 eV and {Delta}E{sub c} = -1.90 eV. Therefore, n-type MoO{sub 3} and p-type NiO, which are both very efficient anode buffer layers (ABLs), exhibit different band structure at the contact with ITO. However, the measurement, by means of a Kelvin probe, of the work functions of the structures ITO/NiO and ITO/MoO{sub 3}, shows that they are close and significantly higher than that of ITO alone. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Feltin, E.; Dorsaz, J. [NOVAGAN AG, CH-1015 Lausanne (Switzerland); Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. [EXALOS AG, CH-8952 Schlieren (Switzerland)

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  18. Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ying; Yang, Lin' an, E-mail: layang@xidian.edu.cn; Wang, Zhizhe; Chen, Qing; Huang, Yonghong; Dai, Yang; Chen, Haoran; Zhao, Hongliang; Hao, Yue [The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2014-09-07

    We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the “dead zone” at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation.

  19. Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

    Science.gov (United States)

    Wang, Ying; Yang, Lin'an; Wang, Zhizhe; Chen, Qing; Huang, Yonghong; Dai, Yang; Chen, Haoran; Zhao, Hongliang; Hao, Yue

    2014-09-01

    We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the "dead zone" at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation.

  20. InP Gunn diodes with a cathode contact injecting hot electrons. Part 1. Interactions between phases in the cathode contacts

    Directory of Open Access Journals (Sweden)

    Boltovets N. S.

    2010-10-01

    Full Text Available The article presents the research on interactions between phases in the Ge–Au, Ge–TiBx and Au–TiBxAu contacts to n–n+–n++-InP, both before and after rapid thermal annealing, and also the output parameters of Gunn diodes based on the InP structure with Au–TiBx–Au–Ge contact metallization in the –40...+60 °С temperature range. It is shown that ohmic contacts to InP layer are formed as a result of diffusion of Ge and Au atoms deep inside the layer. The output parameters of Gunn diodes with Au–TiBx–Au–Ge cathode contacts agree with the data obtained for InP Gunn diodes made with the use of more complicated technology.

  1. Sputtering deposition of P-type SnO films with SnO₂ target in hydrogen-containing atmosphere.

    Science.gov (United States)

    Hsu, Po-Ching; Hsu, Chao-Jui; Chang, Ching-Hsiang; Tsai, Shiao-Po; Chen, Wei-Chung; Hsieh, Hsing-Hung; Wu, Chung-Chih

    2014-08-27

    In this work, we had investigated sputtering deposition of p-type SnO using the widely used and robust SnO2 target in a hydrogen-containing reducing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, optical, and electrical properties of deposited SnOx films were studied. Results show that polycrystalline and SnO-dominant films could be readily obtained by carefully controlling the hydrogen gas ratio in the sputtering gas and the extent of reduction reaction. P-type conductivity was unambiguously observed for SnO-dominant films with traceable Sn components, exhibiting a p-type Hall mobility of up to ∼3 cm(2) V(-1) s(-1). P-type SnO thin-film transistors using such SnO-dominant films were also demonstrated.

  2. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho

    2016-11-18

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  3. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vidya, E-mail: vj1510@yahoo.com

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

  4. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    Science.gov (United States)

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly.

  5. High performance p-type NiOx thin-film transistor by Sn doping

    Science.gov (United States)

    Lin, Tengda; Li, Xiuling; Jang, Jin

    2016-06-01

    Major obstacles towards power efficient complementary electronics employing oxide thin-film transistors (TFTs) lie in the lack of equivalent well performing p-channel devices. Here, we report a significant performance enhancement of solution-processed p-type nickel oxide (NiOx) TFTs by introducing Sn dopant. The Sn-doped NiOx (Sn-NiOx) TFTs annealed at 280 °C demonstrate substantially improved electrical performances with the increase in the on/off current ratio (Ion/Ioff) by ˜100 times, field-effect mobility (μlin) by ˜3 times, and the decrease in subthreshold swing by half, comparing with those of pristine NiOx TFTs. X-ray photoelectron spectroscopy and X-ray diffraction results confirm that Sn atoms tend to substitute Ni sites and induce more amorphous phase. A decrease in density of states in the gap of NiOx by Sn doping and the shift of Fermi level (EF) into the midgap lead to the improvements of TFT performances. As a result, Sn-NiOx can be a promising material for the next-generation, oxide-based electronics.

  6. p-Type CuYO{sub 2} as hydrogen photocathode

    Energy Technology Data Exchange (ETDEWEB)

    Trari, M.; Bouguelia, A.; Bessekhouad, Y. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables, BP 32 El-Alia 16311, Algiers (Algeria)

    2006-01-23

    A new photochemical system based on a CuYO{sub 2} dispersion in aqueous S{sup 2-} or SO{sub 3}{sup 2-} solution as hole scavengers is proposed. The delafossite CuYO{sub 2}, doped with calcium, is a low p-type semiconductor with a hole mobility of 7.3x10{sup -7}m{sup 2}V{sup -1}s{sup -1}. The band gap is 3.50eV and the transition is directly allowed. The valence band edge, located at 5.23eV below vacuum, is made up from Cu-3d type typical of delafossite oxides. The flat band potential V{sub fb} (+0.17V{sub sce}) lies below the H{sub 2}O/H{sub 2} potential permitting a spontaneous H{sub 2}-formation under band gap illumination in aqueous S{sup 2-} or SO{sub 3}{sup 2-} electrolytes. p-CuYO{sub 2} loaded with n-Cu{sub 2}O exhibited a higher performance with a H{sub 2} evolution rate of 0.4cm{sup 3}h{sup -1} in 0.1MS{sup 2-} (pH 13.4). The decrease of photoactivity over time is due to the formation of yellow polysulfides S{sub n}{sup 2-} which compete with H{sub 2}O in the reduction process. (author)

  7. Robust p-type doping of copper oxide using nitrogen implantation

    Science.gov (United States)

    Jorge, Marina; Polyakov, Stanislav M.; Cooil, Simon; Schenk, Alex K.; Edmonds, Mark; Thomsen, Lars; Mazzola, Federico; Wells, Justin W.

    2017-07-01

    We demonstrate robust p-type doping of Cu2O using low/medium energy ion implantation. Samples are made by controlled oxidation of annealed Cu metal foils, which results in Cu2O with levels of doping close to intrinsic. Samples are then implanted with nitrogen ions using a kinetic energy in the few keV range. Using this method, we are able to produce very high levels of doping, as evidenced by a 350 meV shift in the Fermi level towards the VB maximum. The robustness of the nitrogen implanted samples are tested by exposing them to atmospheric contaminants, and elevated temperatures. The samples are found to survive an increase in temperature of many hundreds of degrees. The robustness of the samples, combined with the fact that the materials used are safe, abundant and non-toxic and that the methods used for the growth of Cu2O and N+ implantation are simple and cheap to implement industrially, underlines the potential of Cu2O:N for affordable intermediate band photovoltaics.

  8. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes.

    Science.gov (United States)

    Roques, Magali; Wall, Richard J; Douglass, Alexander P; Ramaprasad, Abhinay; Ferguson, David J P; Kaindama, Mbinda L; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S; Wheatley, Sally P; Yamano, Hiroyuki; Holder, Anthony A; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-11-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  9. Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes

    CERN Document Server

    Zhang, Yuewei; Akyol, Fatih; Allerman, Andrew A; Moseley, Michael W; Armstrong, Andrew M; Rajan, Siddharth

    2016-01-01

    We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62% were achieved for tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs, and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.

  10. P-type Planet–Planet Scattering: Kepler Close Binary Configurations

    Science.gov (United States)

    Gong, Yan-Xiang

    2017-01-01

    A hydrodynamical simulation shows that a circumbinary planet will migrate inward to the edge of the disk cavity. If multiple planets form in a circumbinary disk, successive migration will lead to planet–planet scattering (PPS). PPS of Kepler-like circumbinary planets is discussed in this paper. The aim of this paper is to answer how PPS affects the formation of these planets. We find that a close binary has a significant influence on the scattering process. If PPS occurs near the unstable boundary of a binary, about 10% of the systems can be completely destroyed after PPS. In more than 90% of the systems, there is only one planet left. Unlike the eccentricity distribution produced by PPS in a single star system, the surviving planets generally have low eccentricities if PPS take place near the location of the currently found circumbinary planets. In addition, the ejected planets are generally the innermost of two initial planets. The above results depend on the initial positions of the two planets. If the initial positions of the planets are moved away from the binary, the evolution tends toward statistics similar to those around single stars. In this process, the competition between the planet–planet force and the planet-binary force makes the eccentricity distribution of surviving planets diverse. These new features of P-type PPS will deepen our understanding of the formation of these circumbinary planets.

  11. TSC measurements on proton-irradiated p-type Si-sensors

    Energy Technology Data Exchange (ETDEWEB)

    Donegani, Elena; Fretwurst, Eckhart; Garutti, Erika; Junkes, Alexandra [University of Hamburg (Germany)

    2016-07-01

    Thin n{sup +}p Si sensors are potential candidates for coping with neutron equivalent fluences up to 2.10{sup 16} n{sub eq}/cm{sup 2} and an ionizing dose in the order of a few MGy, which are expected e.g. for the HL-LHC upgrade. The aim of the present work is to provide experimental data on radiation-induced defects in order to: firstly, get a deeper understanding of the properties of hadron induced defects, and secondly develop a radiation damage model based on microscopic measurements. Therefore, the outcomes of Thermally Stimulated Current measurements on 200 μm thick Float-Zone (FZ) and Magnetic Czochralski (MCz) diodes will be shown, as a results of irradiation with 23 MeV protons and isothermal annealing. The samples were irradiated in the fluence range (0.3-1).10{sup 14} n{sub eq}/cm{sup 2}, so that the maximal temperature at which the TSC signal is still sharply distinguishable from the dark current is 200 K. In particular, special focus will be given to the defect introduction rate and to the issue of boron removal in p-type silicon. Annealing studies allow to distinguish which defects mainly contribute to the leakage current and which to the space charge, and thus correlate microscopic defects properties with macroscopic sensor properties.

  12. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes

    KAUST Repository

    Roques, Magali

    2015-11-13

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  13. p-Type hydrogen sensing with Al- and V-doped TiO2 nanostructures

    Science.gov (United States)

    Li, Zhaohui; Ding, Dongyan; Ning, Congqin

    2013-01-01

    Doping with other elements is one of the efficient ways to modify the physical and chemical properties of TiO2 nanomaterials. In the present work, anatase TiO2 nanofilms doped with Al and V elements were fabricated through anodic oxidation of Ti6Al4V alloy and further annealing treatment. Hydrogen sensing behavior of the crystallized Ti-Al-V-O nanofilms at various working temperatures was investigated through exposure to 1,000 ppm H2. Different from n-type hydrogen sensing characteristics of undoped TiO2 nanotubes, the Al- and V-doped nanofilms presented a p-type hydrogen sensing behavior by showing increased resistance upon exposure to the hydrogen-containing atmosphere. The Ti-Al-V-O nanofilm annealed at 450°C was mainly composed of anatase phase, which was sensitive to hydrogen-containing atmosphere only at elevated temperatures. Annealing of the Ti-Al-V-O nanofilm at 550°C could increase the content of anatase phase in the oxide nanofilm and thus resulted in a good sensitivity and resistance recovery at both room temperature and elevated temperatures. The TiO2 nanofilms doped with Al and V elements shows great potential for use as a robust semiconducting hydrogen sensor.

  14. Evidence for an iron-hydrogen complex in p-type silicon

    Science.gov (United States)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  15. Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hassen, M. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia); Ben Jaballah, A. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia)]. E-mail: gadour2003@yahoo.fr; Hajji, M. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia); Rahmouni, H. [Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculte des Sciences de Monastir, Rue de Kairouan, 5000 Monastir (Tunisia); Selmi, A. [Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculte des Sciences de Monastir, Rue de Kairouan, 5000 Monastir (Tunisia); Ezzaouia, H. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia)

    2005-12-05

    In this work, porous silicon damage (PSD) is presented as a simple sequence for efficient external purification techniques. The method consists of using thin nanoporous p-type silicon on both sides of the silicon substrates with randomly hemispherical voids. Then, two main sample types are processed. In the first type, thin aluminium layers ({>=}1 {mu}m) are thermally evaporated followed by photo-thermal annealing treatments in N{sub 2} atmosphere at one of several temperatures ranging between 600 and 800 deg. C. In the second type, phosphorus is continually diffused in N{sub 2}/O{sub 2} ambient in a solid phase from POCl{sub 3} solution during heating at one of several temperatures ranging between 750 and 1000 deg. C for 1 h. Hall Effect and Van Der Pauw methods prove the existence of an optimum temperature in the case of phosphorus gettering at 900 deg. C yielding a Hall mobility of about 982 cm{sup 2} V{sup -1} s{sup -1}. However, in the case of aluminium gettering, there is no gettering limit in the as mentioned temperature range. Metal/Si Schottky diodes are elaborated to clarify these improvements. In this study, we demonstrate that enhanced metal solubility model cannot explain the gettering effect. The solid solubility of aluminium is higher than that of P atoms in silicon; however, the device yield confirms the effectiveness of phosphorus as compared to aluminium.

  16. Structural change and power factor enhancement of thermoelectric p-type films

    Energy Technology Data Exchange (ETDEWEB)

    Rothe, Katrin; Leipner, Hartmut; Heyroth, Frank [Interdisziplinaeres Zentrum fuer Materialwissenschaften, Martin-Luther-Universitaet 06099 Halle (Germany); Stordeur, Matthias; Engers, Bernd [angaris GmbH, Heinrich-Damerow-Str. 1, 06120 Halle (Germany)

    2008-07-01

    By sputter-deposition thin films of the thermoelectric effective p-type compound semiconductor (Bi{sub 0.15}Sb{sub 0.85}){sub 2}Te{sub 3} were prepared. For the first time a distinct increase of the electrical conductivity s was observed after heating of the as-deposited films and afterwards cooling. For the enlightenment of this typical behavior, which seems to be similar found for phase change materials consisting of (Ge, Sb, Te)-alloys, also the Seebeck (S) and the Hall coefficient were measured. It was established that the increase of the electrical conductivity is not connected with an expected decrease of the Seebeck coefficient, because the charge carrier density is reduced but at the same time the hole mobility is increasing. Corresponding analytical investigations by XRD, EDX, and REM shows that besides a grain growth in the polycrystalline films a Te-rich phase appears after the heat treatment. The increase of the electrical conductivity at nearly unchanged Seebeck coefficient can be exploited for the enhancement of the film power factor (S{sup 2}s). This is important for the efficiency of thermoelectric thin films devices as miniaturized coolers, generators, and sensors. Nevertheless for a quantitative interpretation of the presented new experimental results further investigations and theoretical considerations are required.

  17. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Benecha, E. M. [Department of Physics, University of South Africa, P.O Box 392, UNISA 0003, Pretoria (South Africa); Lombardi, E. B. [College of Graduate Studies, University of South Africa, P.O Box 392, UNISA 0003, Pretoria (South Africa)

    2014-02-21

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  18. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    Science.gov (United States)

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-01-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes. PMID:28266587

  19. Enhanced thermoelectric figure of merit of p-type half-Heuslers.

    Science.gov (United States)

    Yan, Xiao; Joshi, Giri; Liu, Weishu; Lan, Yucheng; Wang, Hui; Lee, Sangyeop; Simonson, J W; Poon, S J; Tritt, T M; Chen, Gang; Ren, Z F

    2011-02-01

    Half-Heuslers would be important thermoelectric materials due to their high temperature stability and abundance if their dimensionless thermoelectric figure of merit (ZT) could be made high enough. The highest peak ZT of a p-type half-Heusler has been so far reported about 0.5 due to the high thermal conductivity. Through a nanocomposite approach using ball milling and hot pressing, we have achieved a peak ZT of 0.8 at 700 °C, which is about 60% higher than the best reported 0.5 and might be good enough for consideration for waste heat recovery in car exhaust systems. The improvement comes from a simultaneous increase in Seebeck coefficient and a significant decrease in thermal conductivity due to nanostructures. The samples were made by first forming alloyed ingots using arc melting and then creating nanopowders by ball milling the ingots and finally obtaining dense bulk by hot pressing. Further improvement in ZT is expected when average grain sizes are made smaller than 100 nm.

  20. Results with p-type pixel sensors with different geometries for the HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Allport, P.P. [Department of Physics, University of Liverpool, Oxford Road, Liverpool, L69 7ZE (United Kingdom); Bates, R.; Butter, C. [Department of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Casse, G. [Department of Physics, University of Liverpool, Oxford Road, Liverpool, L69 7ZE (United Kingdom); Dervan, P.J., E-mail: Paul.Dervan@cern.ch [Department of Physics, University of Liverpool, Oxford Road, Liverpool, L69 7ZE (United Kingdom); Forshaw, D.; Tsurin, I. [Department of Physics, University of Liverpool, Oxford Road, Liverpool, L69 7ZE (United Kingdom)

    2013-12-11

    Pixel detectors will be extensively used for the four innermost layers of the upgraded ATLAS experiment at the future High Luminosity LHC (HL-LHC) at CERN. The total area of pixel sensors will be over 5 m{sup 2}. The silicon sensors that will instrument the pixel volume will have to face several technology challenges. They will have to withstand doses up to 2×10{sup 16} n{sub eq}cm{sup −2}, to have a reduced inactive area at the edge of the sensors still being able to hold 1000 V bias voltage and to be relatively low cost considering the large area to be covered. N-side readout on p-type bulk is the most promising technology for satisfying the various requirements. Several sensor types have been produced in the UK, conceived for various readout systems, for studying the properties of n-in-p and n-in-n sensors before and after irradiation with test beam and laboratory measurements. The status of these studies is presented here.

  1. Interstitial oxygen as a source of p-type conductivity in hexagonal manganites

    Science.gov (United States)

    Skjærvø, Sandra H.; Wefring, Espen T.; Nesdal, Silje K.; Gaukås, Nikolai H.; Olsen, Gerhard H.; Glaum, Julia; Tybell, Thomas; Selbach, Sverre M.

    2016-12-01

    Hexagonal manganites, h-RMnO3 (R=Sc, Y, Ho-Lu), have been intensively studied for their multiferroic properties, magnetoelectric coupling, topological defects and electrically conducting domain walls. Although point defects strongly affect the conductivity of transition metal oxides, the defect chemistry of h-RMnO3 has received little attention. We use a combination of experiments and first principles electronic structure calculations to elucidate the effect of interstitial oxygen anions, Oi, on the electrical and structural properties of h-YMnO3. Enthalpy stabilized interstitial oxygen anions are shown to be the main source of p-type electronic conductivity, without reducing the spontaneous ferroelectric polarization. A low energy barrier interstitialcy mechanism is inferred from Density Functional Theory calculations to be the microscopic migration path of Oi. Since the Oi content governs the concentration of charge carrier holes, controlling the thermal and atmospheric history provides a simple and fully reversible way of tuning the electrical properties of h-RMnO3.

  2. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

    Directory of Open Access Journals (Sweden)

    Hong Yu

    2009-04-01

    Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

  3. Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

    Institute of Scientific and Technical Information of China (English)

    Zhang Jiahong; Liu Qingquan; Ge Yixian; Gu Fang; Li Min; Mao Xiaoli; Cao Hongxia

    2013-01-01

    The evaluation of the influence of the bending deformation of silicon nanobridges on their electrical properties is crucial for sensing and actuating applications.A combined theory/experimental approach for determining the resistivity and the density of interface states of the bending silicon nanobridges is presented.The suspended p-type silicon nanobridge test structures were fabricated from silicon-on-insulator wafers by using a standard CMOS lithography and anisotropic wet etching release process.After that,we measured the resistance of a set of silicon nanobridges versus their length and width under different bias voltages.In conjunction with a theoretical model,we have finally extracted both the interface state density of and resistivity suspended silicon nanobridges under different bending deformations,and found that the resistivity of silicon nanobridges without bending was 9.45 mΩ·cm and the corresponding interface charge density was around 1.7445 × 1013 cm-2.The bending deformation due to the bias voltage slightly changed the resistivity of the silicon nanobridge,however,it significantly changed the distribution of interface state charges,which strongly depends on the intensity of the stress induced by bending deformation.

  4. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    Science.gov (United States)

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-03-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes.

  5. Growth of antimony doped P-type zinc oxide nanowires for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhong Lin; Pradel, Ken

    2016-09-27

    In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.

  6. n- and p-type transport in (110) GaAs substrates, single- and double-cleave structures

    Energy Technology Data Exchange (ETDEWEB)

    Roth, S.F.

    2007-06-06

    In this work low-dimensional systems based on GaAs/AlGaAs are investigated with either holes (p-type) in two-dimensional (2D) systems or electrons (n-type) in one-dimensional (1D) systems as charge carriers. Two-dimensional hole systems (2DHS) are grown with molecular beam epitaxy both on (110) wafers and (1 anti 10) facets with the cleaved-edge overgrowth (CEO) method. We use Si as an acceptor by modulating the growth conditions to fabricate the 2DHS in single-interface heterojunction quantum wells. The mobility of the structures reaches up to 7.0 x 10{sup 5} cm{sup 2}/Vs along the [1 anti 10]-direction and 4.1 x 10{sup 5} cm{sup 2}/Vs along the [001]-direction at a hole density of 1.2 x 10{sup 11} cm{sup -2}. Effective values for anisotropic effective hole masses and scattering times are obtained. Inversion asymmetry induced spin splitting results in different spin densities, which yield beatings of the Shubnikov-de Haas oscillations at low temperatures. In a perpendicular magnetic field the 2DHS is quantized into Landau levels, which depend nonlinearly on B due to a strong mixing of light- and heavy-holes. When the Landau levels anticross on the (110) facet, additional peaks appear within minima of the quantum Hall effect. Thermal activation measurements demonstrate a B-dependent energy gap consistent with such an anticrossing. In the second part of the thesis an electron quantum wire is fabricated with twofold cleaved-edge overgrowth. A variation of the conduction band energy in the substrate layers can directly transfer a potential modulation to the adjacent quantum wire. The concept of a transfer potential applied to a narrow two-dimensional system is demonstrated as a first step. Finally, in narrow quantum well samples a simple vertical quantum wire is successfully demonstrated and contacted at each end with n{sup +}-GaAs layers via two-dimensional (2D) leads. We characterize the 2D lead density and mobility for both cleave facets with four

  7. Colored Contact Lens Dangers

    Medline Plus

    Full Text Available ... Vision and Daily Eye Drops After One Use Facts About Colored Contacts and Halloween Safety Colored Contact Lens Facts Over-the-Counter Costume Contacts May Contain Chemicals ...

  8. Colored Contact Lens Dangers

    Medline Plus

    Full Text Available ... One Use Facts About Colored Contacts and Halloween Safety Colored Contact Lens Facts Over-the-Counter Costume ... use of colored contact lenses , from the U.S. Food and Drug Administration (FDA). Are the colored lenses ...

  9. Bridging the gap: disk formation in the Class 0 phase with ambipolar diffusion and Ohmic dissipation

    CERN Document Server

    Dapp, Wolf B; Kunz, Matthew W

    2011-01-01

    Context: Ideal MHD simulations have revealed catastrophic magnetic braking (MB) in the protostellar phase, which prevents the formation of a centrifugal disk around a nascent protostar. Aims: We determine if non-ideal MHD, including the effects of ambipolar diffusion and Ohmic dissipation determined from a detailed chemical network model, allows for disk formation at the earliest stages of star formation (SF). Methods: We employ the axisymmetric thin-disk approximation in order to resolve a dynamic range of 9 orders of magnitude in length and 16 in density, while also calculating partial ionization using up to 19 species in a detailed chemical equilibrium model. MB is applied using a steady-state approximation, and a barotropic relation is used to capture the thermal evolution. Results: We resolve the formation of the first and second cores, with expansion waves at the periphery of each, a magnetic diffusion shock, and prestellar infall profiles at larger radii. Power-law profiles in each region can be unders...

  10. Seebeck Coefficient of Manganese Oxide Nanoparticles as a Function of Ohmic Resistance

    Science.gov (United States)

    Francis, Nicholas; Hedden, Morgan; Constantin, Costel

    2013-03-01

    Due to the ever increasing energy demand and growing global concern over the environmental impact of CO2 emissions, there is an urging need to seek solutions to transit from fossil fuels to sustainable energy. Thermoelectric (TE) materials show great promise for converting waste heat energy into electricity. TE systems have many unique advantages such as silent operationality, time reliability, and dimensional scalability. Most recently, researchers Song et al. found that MnO2 nanoparticles show a giant Seebeck coefficient of S = 20 mV/K, which is100 times higher than bismuth telluride, one of the best TE materials. Song et al. concluded the paper claiming that the giant S is related to the surface density of the electronic states (DOS). However, they provided very little information about the S as a function of Ohmic resistance [R] for different nano particle sizes which can give information about the DOS. Our preliminary results show that there is a sudden increase of S from 0.33-0.63 mV/K as R increases from 80-110 Ohms. This transition has never been seen before and it can give clues as to the existence of the Giant S observed in this material. This work was supported in part by U.S. Department of Energy Grant #DE-EE0003100..

  11. Effect of the Electric Field Frequency on Ascorbic Acid Degradation during Thermal Treatment by Ohmic Heating

    Science.gov (United States)

    Mercali, Giovana Domeneghini; Schwartz, Steven; Marczak, Ligia Damasceno Ferreira; Tessaro, Isabel Cristina; Sastry, Sudhir

    2014-01-01

    In this work, the influence of the electric field frequency and solids content on the degradation kinetics of ascorbic acid during ohmic heating of acerola pulp and acerola serum was investigated. The degradation percentage of ascorbic acid in the pulp after 120 min of heating varied between 12 and 17%. For the serum, the degradation percentage was in the range of 13 and 18%. The results were fitted to the first-order model, and the kinetic rate constants ranged from 1.1 to 1.6 × 10−3 min−1 and from 1.1 to 1.5 × 10−3 min−1 for pulp and serum, respectively. D values ranged between 1480 and 2145 min for the pulp and between 1524 and 1951 min for the serum. A distinct behavior between the kinetic parameters of the pulp and serum in electric field frequencies ranging from 10 to 1000 Hz indicates that the presence of distinct amounts and types of solids might affect the rate of the electron transfer in electrochemical reactions. These variables may also affect the polarization process stimulated by the oscillating electric field. The non-achievement of the equilibrium of the polarization process may have an influence on oxidation reactions, affecting the predisposition to hydrogen donation from the ascorbic acid molecule. PMID:24892902

  12. Decoherence plus spontaneous symmetry breakdown generate the ``ohmic`` view of the state-vector collapse

    Energy Technology Data Exchange (ETDEWEB)

    Ne`eman, Y. [Tel-Aviv Univ. (Israel). Beverly and Raymond Sackler Faculty of Exact Sciences]|[Univ. of Texas, Austin, TX (United States). Center for Particle Physics

    1993-06-01

    The collapse of the state-vector is described as a phase transition due to three features. First, there is the atrophying of indeterminacy for macroscopic objects -- including the measurement apparatus. Secondly, there is the environment decohering mechanism, as described by Zeh, Joos and others -- dominant in macroscopic objects. As a result, the classical background, an input in the Copenhagen prescriptions, is generated as an ``effective`` picture, similar to the ``effective`` introduction of Ohmic resistance or of thermodynamical variables, when going from the micro to the macroscopic; in this case, the collectivized substrate is provided by the multiplicity of photon scatterings, etc., on top of the effect of the large number of particles in macroscopic objects. Thirdly, there is the Everett ``branching``, i.e. the materialization of one of the now decoherent states, accompanied by the destruction of the other branches. By definition, quantum indeterminancy represents a symmetry; in a measurement, or in a branching, this symmetry is broken ``spontaneously``, involving a Ginzburg-Landau type potential with asymmetric minima, thus concretizing the quantum ``dice`` without the burden of ``many worlds``. The authors review and systematize the various phase transitions relating quantum to classical phenomena.

  13. Study of internal transport barriers in the initial phase of Ohmic discharges in TUMAN-3M

    Energy Technology Data Exchange (ETDEWEB)

    Askinazi, L G [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Bulanin, V V [St Petersburg State Polytechnical University, 195251 (Russian Federation); Vildjunas, M I [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Golant, V E [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Gorokhov, M V [St Petersburg State Polytechnical University, 195251 (Russian Federation); Kornev, V A [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Krikunov, S V [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Lebedev, S V [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Petrov, A V [St Petersburg State Polytechnical University, 195251 (Russian Federation); Rozhdestvensky, V V [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Tukachinsky, A S [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Zhubr, N A [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation)

    2004-05-01

    A regime with electron heat confinement improvement was recently found in the initial phase of discharges in the TUMAN-3M tokamak. An internal transport barrier (ITB) formation in this regime was confirmed by Thomson scattering measurements and by transport modelling. Two possible reasons for the ITB formation are discussed in the paper: by reduction of turbulent transport in the presence of low magnetic shear or by plasma sheared rotation. It is demonstrated that low magnetic shear formation is possible in the current ramp-up phase of the Ohmic discharge. The low magnetic shear does not seem to be the only reason for the transport reduction. Results of Doppler reflectometry measurements of poloidal rotation of density fluctuations are presented. It is found that core confinement improvement correlates with the appearance of sheared rotation of the density fluctuations and with a burst of the MHD activity. The ITB formation in the regime seems to be a result of a combined action of reduced magnetic shear and plasma sheared rotation.

  14. Effect of the electric field frequency on ascorbic acid degradation during thermal treatment by ohmic heating.

    Science.gov (United States)

    Mercali, Giovana Domeneghini; Schwartz, Steven; Marczak, Ligia Damasceno Ferreira; Tessaro, Isabel Cristina; Sastry, Sudhir

    2014-06-25

    In this work, the influence of the electric field frequency and solids content on the degradation kinetics of ascorbic acid during ohmic heating of acerola pulp and acerola serum was investigated. The degradation percentage of ascorbic acid in the pulp after 120 min of heating varied between 12 and 17%. For the serum, the degradation percentage was in the range of 13 and 18%. The results were fitted to the first-order model, and the kinetic rate constants ranged from 1.1 to 1.6×10(-3) min(-1) and from 1.1 to 1.5×10(-3) min(-1) for pulp and serum, respectively. D values ranged between 1480 and 2145 min for the pulp and between 1524 and 1951 min for the serum. A distinct behavior between the kinetic parameters of the pulp and serum in electric field frequencies ranging from 10 to 1000 Hz indicates that the presence of distinct amounts and types of solids might affect the rate of the electron transfer in electrochemical reactions. These variables may also affect the polarization process stimulated by the oscillating electric field. The non-achievement of the equilibrium of the polarization process may have an influence on oxidation reactions, affecting the predisposition to hydrogen donation from the ascorbic acid molecule.

  15. Sub-Ohmic spin-boson model with off-diagonal coupling: ground state properties.

    Science.gov (United States)

    Lü, Zhiguo; Duan, Liwei; Li, Xin; Shenai, Prathamesh M; Zhao, Yang

    2013-10-28

    We have carried out analytical and numerical studies of the spin-boson model in the sub-ohmic regime with the influence of both the diagonal and the off-diagonal coupling accounted for, via the Davydov D1 variational ansatz. While a second-order phase transition is known to be exhibited by this model in the presence of diagonal coupling only, we demonstrate the emergence of a discontinuous first order phase transition upon incorporation of the off-diagonal coupling. A plot of the ground state energy versus magnetization highlights the discontinuous nature of the transition between the isotropic (zero magnetization) state and nematic (finite magnetization) phases. We have also calculated the entanglement entropy and a discontinuity found at a critical coupling strength further supports the discontinuous crossover in the spin-boson model in the presence of off-diagonal coupling. It is further revealed via a canonical transformation approach that for the special case of identical exponents for the spectral densities of the diagonal and the off-diagonal coupling, there exists a continuous crossover from a single localized phase to doubly degenerate localized phase with differing magnetizations.

  16. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    Science.gov (United States)

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  17. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes.

    Directory of Open Access Journals (Sweden)

    Magali Roques

    2015-11-01

    Full Text Available Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs. Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites in host liver and red blood cells, and sporogony (producing sporozoites in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  18. Electron spin relaxation in p-type GaAs quantum wells

    Science.gov (United States)

    Zhou, Y.; Jiang, J. H.; Wu, M. W.

    2009-11-01

    We investigate electron spin relaxation in p-type GaAs quantum wells from a fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings, such as electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb and electron-hole exchange (the Bir-Aronov-Pikus (BAP) mechanism) scatterings, explicitly included. Via this approach, we examine the relative importance of the D'yakonov-Perel' (DP) and BAP mechanisms in wide ranges of temperature, hole density, excitation density and impurity density, and present a phase-diagram-like picture showing the parameter regime where the DP or BAP mechanism is more important. It is discovered that in the impurity-free case the temperature regime where the BAP mechanism is more efficient than the DP one is around the hole Fermi temperature for high hole density, regardless of excitation density. However, in the high impurity density case with the impurity density identical to the hole density, this regime is roughly from the electron Fermi temperature to the hole Fermi temperature. Moreover, we predict that for the impurity-free case, in the regime where the DP mechanism dominates the spin relaxation at all temperatures, the temperature dependence of the spin relaxation time (SRT) presents a peak around the hole Fermi temperature, which originates from the electron-hole Coulomb scattering. We also predict that at low temperature, the hole-density dependence of the electron SRT exhibits a double-peak structure in the impurity-free case, whereas it shows first a peak and then a valley in the case of identical impurity and hole densities. These intriguing behaviors are due to the contribution from holes in high subbands.

  19. Comparison of equilibrium ohmic and nonequilibrium swarm models for monitoring conduction electron evolution in high-altitude EMP calculations

    Science.gov (United States)

    Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric; Ji, Wei

    2016-10-01

    Atmospheric electromagnetic pulse (EMP) events are important physical phenomena that occur through both man-made and natural processes. Radiation-induced currents and voltages in EMP can couple with electrical systems, such as those found in satellites, and cause significant damage. Due to the disruptive nature of EMP, it is important to accurately predict EMP evolution and propagation with computational models. CHAP-LA (Compton High Altitude Pulse-Los Alamos) is a state-of-the-art EMP code that solves Maxwell's equations for gamma source-induced electromagnetic fields in the atmosphere. In EMP, low-energy, conduction electrons constitute a conduction current that limits the EMP by opposing the Compton current. CHAP-LA calculates the conduction current using an equilibrium ohmic model. The equilibrium model works well at low altitudes, where the electron energy equilibration time is short compared to the rise time or duration of the EMP. At high altitudes, the equilibration time increases beyond the EMP rise time and the predicted equilibrium ionization rate becomes very large. The ohmic model predicts an unphysically large production of conduction electrons which prematurely and abruptly shorts the EMP in the simulation code. An electron swarm model, which implicitly accounts for the time evolution of the conduction electron energy distribution, can be used to overcome the limitations exhibited by the equilibrium ohmic model. We have developed and validated an electron swarm model previously in Pusateri et al. (2015). Here we demonstrate EMP damping behavior caused by the ohmic model at high altitudes and show improvements on high-altitude, upward EMP modeling obtained by integrating a swarm model into CHAP-LA.

  20. 液体食品连续通电加热装置%Continuous Ohmic Heating Device of Liquid Food

    Institute of Scientific and Technical Information of China (English)

    王冉冉; 田富洋; 朱敏; 张世福; 任杰; 李法德

    2012-01-01

    为实现液体食品的通电加热,结合整流逆变技术设计了液体食品连续通电加热装置,系统由可控脉冲电源、加热室、液泵和流量控制4部分组成.可控脉冲电源输出双极性高频方波脉冲电压,频率、电压和占空比可调,输出功率可达50 kW.实验证明,该装置加热速度快、控制简单方便、极板污染很少,能够满足液体食品的加工要求.%In order to achieve ohmic heating for liquid food, by using rectifier and inverter technology, continuous ohmic heating device was designed. The equipment was consisted of controllable pulsed power supply, ohmic heating chamber, pump and flow controller. Controllable pulsed power supply can output bipolar-rectangle waveform pulse voltage with high frequency. The frequency, amplitude and duty ratio were adjustable. The output capacity could reach to 50 kW. The result showed that the device could be controlled speedily and easily. It could meet the requirement of liquid food process and without pollution.

  1. Characterization of nonOhmic electrical transport in double perovskite compounds through bias scale and nonlinearity exponent

    Science.gov (United States)

    Chakraborty, D.; Nandi, U. N.; Jana, D.; Dasgupta, P.; Poddar, A.

    2017-01-01

    Scaling analysis of nonOhmic electrical transport in double perovskite (DP) compounds like La2NiMnO6 and Sr2Fe0.3Mn0.7MoO6 is presented over a wide range of electric bias and temperatures. It is shown that the voltage V0(T) at which conductance deviates from its Ohmic value Σ0(T) scales with Σ0(T) as V0(T) ∼Σ0(T) xT , xT being the onset exponent characterizing the onset of nonOhmic conduction. Interestingly, it was found that xT is negative and insensitive to the nature of conduction mechanism in DPs but is related to the characteristic temperature T0 and the mean hopping length Hm. We provide a scaling formalism in terms of the parameters V0(T) and xT in DPs for deeper understanding of the spintronic application and the electrode functioning in solid oxide fuel cells (SOFC). Inelastic multi-step tunneling is found to be the suitable mechanism of electronic transport characterized completely by these two parameters.

  2. Undistorted Cyclic Voltammograms at Scan Rates up to 2.5 MV·s-1 through Positive Feedback Compensation of Ohmic Drop

    Institute of Scientific and Technical Information of China (English)

    GUO Zhi-Yong郭智勇; LIN Xiang-Qin林祥钦; DENG Zhao-Xiang邓兆祥

    2004-01-01

    A circuit based on the current feedback operational amplifier was constructed to accomplish on-line ohmic drop compensation in ultrafast cyclic voltammetry. Firstly, its characteristics were confirmed experimentally on dummy cells. Then the reduction of anthracene in acetonitrile, a classical test example with very fast electron-tratnsfer kinetics, was examined to prove them too. The results showed that this circuit could afford excellent ohmic drop if 5% error is tolerated.

  3. High-Output-Power Densities from MBE-grown n- and p-Type PbTeSe-based Thermoelectrics via Improved Contact Metallization

    Science.gov (United States)

    2011-10-19

    thermocouples used to establish 11 T were embedded in the copper rod just above the sample that produced T hot and the second thermocouple was embedded in...Bi 1E+I9 a+ 180 IUD PIDilli 6E+!2 !!,++ Polished BaFl substrate G-561-A 40 min atomic H, 140 oc 200nmNi ~1x10"" Scatter in TLM data, n-type 100 run

  4. Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Ming-Hsien Li

    2016-04-01

    Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

  5. Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

    Science.gov (United States)

    Sun, Chang; Nguyen, Hieu T.; Rougieux, Fiacre E.; Macdonald, Daniel

    2017-02-01

    Photoluminescence (PL) images and micro-PL maps were taken on Cu- or Ni-doped monocrystalline silicon wafers, to investigate the distribution of the metal precipitates. Several n-type and p-type wafers were used in which Cu or Ni were introduced in the starting melt of the ingots and precipitated during the ingot cooling (as opposed to surface contamination). The micro-PL mapping allowed investigation of the metal precipitates with a higher spatial resolution. Markedly different precipitation patterns were observed in n- and p-type samples: in both Cu- and Ni-doped n-type samples, circular central regions and edge regions were observed. In these regions, particles were distributed randomly and homogeneously. In the p-type Cu-doped and Ni-doped samples, by contrast, the precipitates occurred in lines along orientations. The difference in the precipitation behaviour in n- and p-type samples is conjectured to be caused by different concentrations of self-interstitials and vacancies remaining in the crystal during the ingot cooling: there are more vacancies in the n-type ingots but more interstitials in the p-type ingots. The dopant effects on the intrinsic point defect concentrations in silicon crystals and possible precipitation mechanisms are discussed based on the findings in this work and the literature.

  6. Comparison of ferromagnetism in n- and p-type magnetic semiconductor thin films of ZnCoO

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y.H., E-mail: yuhua@phys.ncku.edu.t [Department of Physics, National Cheng Kung University, No. 1, Ta-Shuei Road, Tainan 70101, Taiwan (China); Lee, J.C.; Min, J.F. [Department of Physics, National Cheng Kung University, No. 1, Ta-Shuei Road, Tainan 70101, Taiwan (China); Su, C.W. [Department of Applied Physics, National Chiayi University, Chiayi 60004, Taiwan (China)

    2011-07-15

    Both n- and p-type diluted magnetic semiconductor ZnCoO are made by magnetron co-sputtering with, respectively, dopants of Al and dual dopants of Al and N. The two sputtering targets are compound ZnCoO with 5% weight of Co and pure metal Al. Sputtering gases for n- and p-type films are pure Ar and N{sub 2}, respectively. These films are magnetic at room temperature and possess free electron- and hole-concentration of 5.34x10{sup 20} and 5.27x10{sup 13} cm{sup -3}. Only the n-type film exhibits anomalous Hall-effect signals. Magnetic properties of these two types of films are compared and discussed based on measurements of microstructure and magneto-transport properties. - Research highlights: n-type ZnCoO:Al and p-type ZnCoO:(Al, N) films are made and are both ferromagnetic at room temperature. Signal of anomalous Hall-effect (AHE) is clearly observed only for n-type film but not for p-type film. Photoluminescence (PL) spectrum shows a peak attributed to shallow acceptor band of N. Ferromagnetic exchange coupling between magnetic ions in n-type film is through spin polarized free electrons. Ferromagnetism in p-type film is not attributed to the free hole-carriers mediation but to the overlap of BMP.

  7. Current distribution effects in AC impedance spectroscopy of electroceramic point contact and thin film model electrodes

    DEFF Research Database (Denmark)

    Nielsen, Jimmi; Jacobsen, Torben

    2010-01-01

    The Finite-Element-Method (FEM) was used for the simulations of the effect of a changing current distribution during AC impedance spectrum recording on electroceramic point contact and thin film model electrodes. For pure electronic conducting point contact electrodes the transition from the prim......The Finite-Element-Method (FEM) was used for the simulations of the effect of a changing current distribution during AC impedance spectrum recording on electroceramic point contact and thin film model electrodes. For pure electronic conducting point contact electrodes the transition from...... regarding its significance is provided. The associated characteristic impedance spectrum shape change is simulated and its origin discussed. Furthermore, the characteristic shape of impedance spectra of thin electroceramic film electrodes with lateral ohmic resistance is studied as a function...

  8. Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatment

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Yin; Cai, Qing; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou [Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 (China); Yang, Lianhong [Department of Physics, Changji College, Changji, 831100 (China); Xue, Junjun [School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210093 (China)

    2016-04-15

    We report on improved electrical properties of Schottky contacts to InGaN alloys by introducing a photoelectrochemical treatment. The Schottky barrier height determined by a thermionic-field emission model, a dominating forward-current-transport mechanism, increased by 0.15 eV from 1.02 eV for conventional contacts to 1.17 eV for those with photoelectrochemical treatment at room temperature, while the ideality factors is closer to 1 after photoelectrochemical treatment. Furthermore, the reverse leakage mechanism varies from an ohmic transport mechanism at relatively low voltage and space charge-limited current mechanism at relatively high voltage for conventional contacts to Frenkel-Poole emission for improved Schottky contacts, which is attributed to partly removing surface states by the photoelectrochemical treatment. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Tuning back contact property via artificial interface dipoles in Si/organic hybrid solar cells

    Science.gov (United States)

    Wang, Dan; Sheng, Jiang; Wu, Sudong; Zhu, Juye; Chen, Shaojie; Gao, Pingqi; Ye, Jichun

    2016-07-01

    Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density (Jsc). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage (Voc). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.

  10. XPS investigation of titanium contact formation to ZnO nanowires

    Science.gov (United States)

    Barnett, Chris J.; Castaing, Ambroise; Jones, Daniel R.; Lewis, Aled R.; Jenkins, Lewys J.; Cobley, Richard J.; Maffeis, Thierry G. G.

    2017-02-01

    Ti is often used to form an initial Ohmic interface between ZnO and Au due to its low work function, and the TiO2/ZnO heterojunction is also of great importance for many practical applications of nanoparticles. Here, Ti has been controllably deposited onto hydrothermally grown ZnO nanowires and the formation of metal-semiconductor contact has been investigated using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy and scanning electron microscopy. XPS results showed that that the Ti initially reacts with surface oxygen species to form TiO2, and further deposition results in the formation of oxides with oxidation state numbers lower than four, and eventually metallic Ti on top of the TiO2. The formation of TiC was also observed. XPS showed that the onset of metallic Ti coincided with a Zn 3p core level shift to lower binding energy, indicating upwards band bending and the formation of a rectifying contact. Annealing caused a near-complete conversion of the metallic Ti to TiO2 and caused the Zn 3p to shift back to its original higher binding energy, resulting in downwards band bending and a more Ohmic contact. PL measurements showed that the optical properties of the nanowires are not affected by the contact formation.

  11. Photoelectrochemical hydrogen-evolution over p-type chalcopyrite CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Djellal, L. [Laboratoire des Solutions Solides, Faculte de Physique, (USTHB) BP 32 El Alia 16111, Algiers (Algeria); Omeiri, S.; Bouguelia, A. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables, Faculte de Chimie, (USTHB) BP 32 El Alia 16111, Algiers (Algeria); Trari, M. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables, Faculte de Chimie, (USTHB) BP 32 El Alia 16111, Algiers (Algeria)], E-mail: mtrari@caramail.com

    2009-05-12

    Photocatalytic H{sub 2}-production has been realized over active CuInSe{sub 2}, synthesized by the fusion technique. The material crystallizes in the chalcopyrite structure and exhibits p-type conductivity ascribed to copper deficiency. An optical gap of 0.95 eV was determined from the reflectance diffuse spectrum. The electrical conductivity follows an Arrhenius-type law with activation energy of 23 meV in conformity with polaron hopping. The slope and the intercept of the Mott-Schottky plot gave a holes density N{sub A} of 5.9 x 10{sup 18} cm{sup -3} and a flat band potential of -0.36V{sub SCE}, in perfect agreement with the photo-onset potential V{sub on} (-0.35V{sub SCE}). Hence, the conduction band, located at -1.29V{sub SCE}, allows a spontaneous H{sub 2} liberation upon visible light. In aqueous solutions, the material is stabilized by hole consumption involving X{sup 2-} species (=S{sup 2-} and SO{sub 3}{sup 2-}). H{sub 2} formation would become thermodynamically easy in alkaline media and the best photoactivity was obtained in thiosulfate electrolyte (10{sup -2} M S{sub 2}O{sub 3}{sup 2-}, 0.5 M KOH) with an evolution rate of 0.009 ml mg{sup -1} h{sup -1}. The light induced electron transfer through the interface involves two steps mechanism where S{sub 2}O{sub 3}{sup 2-} is oxidized to SO{sub 3}{sup 2-} and SO{sub 4}{sup 2-} by successive reactions. Such results are corroborated by the semi logarithmic plots and photocurrent-photopotential characteristics. The influence of pH was studied with S{sub 2}O{sub 3}{sup 2-} The tendency towards saturation for prolonged irradiation is attributed to competitive reductions of the end products S{sub n}{sup 2-} and S{sub 2}O{sub 6}{sup 2-} with water and to the yellow color of polysulfide S{sub n}{sup 2-}.

  12. Comparison of p-type commercial electron diodes for in vivo dosimetry.

    Science.gov (United States)

    Marre, D; Marinello, G

    2004-01-01

    This paper compares the characteristics of three types of commercial p-type electron diodes specially designed for in vivo dosimetry (Scanditronix EDD2, Sun Nuclear QED 111200-0 and PTW T60010E diodes coupled with a Therados DPD510 dosimeter) in electron fields with energies from 4.5 to 21 MeV, and in conditions similar to those encountered in radiotherapy. In addition to the diodes, a NACP plane parallel ionization chamber and film dosimeters have been used in the experiments. The influence of beam direction on the diode responses (directional effect) was investigated. It was found to be the greatest for the lowest electron beam energy. At 12 MeV and an incidence of +/- 30 degrees, the variation was found to be less than 1% for the Scanditronix and Sun Nuclear diodes and less than 3% for the PTW one. The three diodes exhibited a variation in sensitivity with dose-per-pulse of less than 1% over the range 0.18-0.43 mGy/pulse. The temperature dependence was also studied. The response was linear for the three diodes between 22.2 and 40 degrees C and the sensitivity variations with temperature were (0.25+/-0.01)%/degree C, (0.28+/-0.01)%/degree C, and (0.02 +/-0.01)%/degree C for Scanditronix, Sun Nuclear, and PTW diodes, respectively. Finally the perturbation to the irradiation field induced by the presence of diodes placed at the surface of a homogeneous phantom was investigated and found to be significant, both at the surface and at the depth of maximum dose (several tens of percent) for all three diode types. There is an increase of dose right underneath the diode (close to the surface) and a dose shadow at the depth of maximum. The study shows that electron diodes can be used for in vivo dosimetry provided their characteristics are carefully established before use and taken into consideration at the time of interpretation of the results.

  13. Lifetime and DLTS studies of interstitial Fe in p-type Si

    Energy Technology Data Exchange (ETDEWEB)

    Syre, M.; Holt, A. [Institute for Energy Technology (IFE), Solar Energy Department, P.O. Box 40, 2027 Kjeller (Norway); Monakov, E. [University of Oslo (UiO), Department of Physics, Blindern P.O. Box 1048, 0316 Oslo (Norway); Institute for Energy Technology (IFE), Solar Energy Department, P.O. Box 40, 2027 Kjeller (Norway); Svensson, B.G. [University of Oslo (UiO), Department of Physics, Blindern P.O. Box 1048, 0316 Oslo (Norway)

    2011-03-15

    Fe is one of the most prominent metallic impurities in solar-grade Si. In this work we have investigated the kinetics of in-diffusion and formation of the interstitial fraction (Fe{sub i}). P-type Cz-Si with a resistivity of 10 {omega}-cm has been intentionally contaminated with Fe by in-diffusion from a surface layer of FeCl{sub 3} at 700 C followed by cooling with a rate of {proportional_to} 3.3 K/s. The concentration of Fe{sub i} has been measured both by microwave photo conductance decay ({mu}-PCD) and deep level transient spectroscopy (DLTS). In the {mu}-PCD measurements, the Fe{sub i} concentration has been determined using the ef- fect of light-induced splitting of the iron-boron pairs (FeB), while in the DLTS measurements Fe{sub i} has been monitored by the donor electronic state at 0.43 eV above the valence band. We have observed a linear dependence between the minority carrier lifetime ({tau}) and the inverse Fe{sub i} concentration. This confirms Fe{sub i} as the dominating recombination centre. In the present investigations we use a material relevant for solar cells with a resistivity of 10 {omega}-cm. We have found that the concentration of interstitial iron decreases with increasing time for in-diffusion of Fe, provided identical cooling condition. This decreasing con- centration of Fe{sub i} is believed to be due to formation of more iron precipitates that serve as sinks for fast diffusing Fe{sub i}. A high temperature anneal at 1000 C for 1 minute followed by fast cooling ({proportional_to} 33 K/s) results in dissolution of the precipitates and freezing Fe into interstitial positions, where the concentration of Fe{sub i} increases with increasing in-diffusion time. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Boric acid solution concentration influencing p-type emitter formation in n-type crystalline Si solar cells

    Science.gov (United States)

    Singha, Bandana; Singh Solanki, Chetan

    2016-09-01

    Boric acid (BA) is a spin on dopant (BSoD) source which is used to form p+ emitters in n-type c-Si solar cells. High purity boric acid powder (99.99% pure) when mixed with deionized (DI) water can result in high quality p-type emitter with less amount of surface defects. In this work, we have used different concentrations of boric acid solution concentrations to fabricate p-type emitters with sheet resistance values < 90 Ω/□. The corresponding junction depths for the same are less than 500 nm as measured by SIMS analysis. Boron rich layer (BRL), which is considered as detrimental in emitter performance is found to be minimal for BA solution concentration less than 2% and hence useful for p-type emitter formation.

  15. Modeling of normal incidence absorption in p-type GaAs/AlGaAs quantum well infrared detectors

    Science.gov (United States)

    Brown, Gail J.; Szmulowicz, Frank

    1995-04-01

    The absorption of infrared radiation at normal incidence in p-type GaAs/AlGaAs quantum wells, unlike in n-type, is fundamentally allowed. We have measured and theoretically modeled the bound-to-continuum absorption in these p-type materials. The infrared absorption coefficient was calculated are based on the electronic structure, wave functions and optical matrix elements obtained from an 8 X 8 envelope-function approximation (EFA) calculation. The 8 X 8 EFA Hamiltonian incorporates the coupling between the heavy, light, spin-orbit, and conduction bands. In calculating the continuum states for bound-to- continuum intersubband absorption, we do not enclose the well in an artificial box with infinite walls. A comparison of the theoretical absorption and measured photoresponse results verified the accuracy of our model and provided a basis for optimizing the design of p-type quantum wells for infrared detection.

  16. Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shuai; Liu, Shu-Liang; Liu, Ling-Zhi; Liu, Yi-Chen [College of Physics, Qingdao University, Qingdao 266071 (China); Long, Yun-Ze, E-mail: yunze.long@163.com [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China); State Key Laboratory Cultivation Base of New Fiber Materials and Modern Textile, Qingdao University, Qingdao 266071 (China); Collaborative Innovation Center for Marine Biomass Fibers, Materials and Textiles of Shandong Province, Qingdao 266071 (China); Zhang, Hong-Di; Zhang, Jun-Cheng; Han, Wen-Peng [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China)

    2014-01-27

    Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

  17. In silico identification and characterization of the ion transport specificity for P-type ATPases in the Mycobacterium tuberculosis complex

    Directory of Open Access Journals (Sweden)

    Novoa-Aponte Lorena

    2012-10-01

    Full Text Available Abstract Background P-type ATPases hydrolyze ATP and release energy that is used in the transport of ions against electrochemical gradients across plasma membranes, making these proteins essential for cell viability. Currently, the distribution and function of these ion transporters in mycobacteria are poorly understood. Results In this study, probabilistic profiles were constructed based on hidden Markov models to identify and classify P-type ATPases in the Mycobacterium tuberculosis complex (MTBC according to the type of ion transported across the plasma membrane. Topology, hydrophobicity profiles and conserved motifs were analyzed to correlate amino acid sequences of P-type ATPases and ion transport specificity. Twelve candidate P-type ATPases annotated in the M. tuberculosis H37Rv proteome were identified in all members of the MTBC, and probabilistic profiles classified them into one of the following three groups: heavy metal cation transporters, alkaline and alkaline earth metal cation transporters, and the beta subunit of a prokaryotic potassium pump. Interestingly, counterparts of the non-catalytic beta subunits of Hydrogen/Potassium and Sodium/Potassium P-type ATPases were not found. Conclusions The high content of heavy metal transporters found in the MTBC suggests that they could play an important role in the ability of M. tuberculosis to survive inside macrophages, where tubercle bacilli face high levels of toxic metals. Finally, the results obtained in this work provide a starting point for experimental studies that may elucidate the ion specificity of the MTBC P-type ATPases and their role in mycobacterial infections.

  18. The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators

    Directory of Open Access Journals (Sweden)

    M.-H. Liao

    2015-05-01

    Full Text Available Five different kinds of insulators including BaTiO3, TiO2, Al2O3, CdO and ZnO on the n-type InGaAs metal-insulator-semiconductor (M-I-S ohmic contact structure are studied. The effect for the dielectric constant (ε of inserted insulator and the conduction band offset (CBO between an insulator and semiconductor substrate is analyzed by a unified M-I-S contact model. Based on the theoretical model and experimental data, we demonstrates that the inserted ZnO insulator with the high electron affinity and the low CBO (∼0.1 eV to the InGaAs substrate results in ∼10 times contact resistivity reduction, even the ε of ZnO is not pretty high (∼10.

  19. Contact Dermatitis in Pediatrics.

    Science.gov (United States)

    Pelletier, Janice L; Perez, Caroline; Jacob, Sharon E

    2016-08-01

    Contact dermatitis is an umbrella term that describes the skin's reaction to contacted noxious or allergenic substances. The two main categories of contact dermatitis are irritant type and allergic type. This review discusses the signs, symptoms, causes, and complications of contact dermatitis. It addresses the testing, treatment, and prevention of contact dermatitis. Proper management of contact dermatitis includes avoidance measures for susceptible children. Implementation of a nickel directive (regulating the use of nickel in jewelry and other products that come into contact with the skin) could further reduce exposure to the most common allergens in the pediatric population. [Pediatr Ann. 2016;45(8):e287-e292.].

  20. Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

    CERN Document Server

    Bajaj, Sanyam; Krishnamoorthy, Sriram; Hung, Ting-Hsiang; Rajan, Siddharth

    2015-01-01

    A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back HEMT device are also discussed.